WorldWideScience

Sample records for nanocrystalline aluminum nitride

  1. Superconducting structure with layers of niobium nitride and aluminum nitride

    International Nuclear Information System (INIS)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

  2. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  3. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  4. Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

    NARCIS (Netherlands)

    Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

    2002-01-01

    Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

  5. Nanocrystalline iron nitride films with perpendicular magnetic anisotropy

    International Nuclear Information System (INIS)

    Gupta, Ajay; Dubey, Ranu; Leitenberger, W.; Pietsch, U.

    2008-01-01

    Nanocrystalline α-iron nitride films have been prepared using reactive ion-beam sputtering. Films develop significant perpendicualr magnetic anisotropy (PMA) with increasing thickness. A comparison of x-ray diffraction patterns taken with scattering vectors in the film plane and out of the film plane provides a clear evidence for development of compressive strain in the film plane with thickness. Thermal annealing results in relaxation of the strain, which correlates very well with the relaxation of PMA. This suggests that the observed PMA is a consequence of the breaking of the symmetry of the crystal structure due to the compressive strain

  6. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

    2017-09-26

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  7. Nanocrystalline Aluminum Truss Cores for Lightweight Sandwich Structures

    Science.gov (United States)

    Schaedler, Tobias A.; Chan, Lisa J.; Clough, Eric C.; Stilke, Morgan A.; Hundley, Jacob M.; Masur, Lawrence J.

    2017-12-01

    Substitution of conventional honeycomb composite sandwich structures with lighter alternatives has the potential to reduce the mass of future vehicles. Here we demonstrate nanocrystalline aluminum-manganese truss cores that achieve 2-4 times higher strength than aluminum alloy 5056 honeycombs of the same density. The scalable fabrication approach starts with additive manufacturing of polymer templates, followed by electrodeposition of nanocrystalline Al-Mn alloy, removal of the polymer, and facesheet integration. This facilitates curved and net-shaped sandwich structures, as well as co-curing of the facesheets, which eliminates the need for extra adhesive. The nanocrystalline Al-Mn alloy thin-film material exhibits high strength and ductility and can be converted into a three-dimensional hollow truss structure with this approach. Ultra-lightweight sandwich structures are of interest for a range of applications in aerospace, such as fairings, wings, and flaps, as well as for the automotive and sports industries.

  8. Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

    Science.gov (United States)

    Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

    2017-08-01

    In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

  9. Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride

    Science.gov (United States)

    2012-01-05

    Hutchinson, Adv. Appl . Mech. 29 (1992). [34] H. Ming-Yuan, J.W. Hutchinson, Int. J. Solids Struct. 25 (1989) 1053. [35] J. Salem , L. Ghosn, Int. J...Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride

  10. Fluorescent lighting with aluminum nitride phosphors

    Science.gov (United States)

    Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.

    2016-05-10

    A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

  11. Surface ferromagnetism and superconducting properties of nanocrystalline niobium nitride

    International Nuclear Information System (INIS)

    Shipra, R.; Kumar, Nitesh; Sundaresan, A.

    2013-01-01

    Nanocrystalline δ-NbN x samples have been synthesized by reacting NbCl 5 and urea at three different temperatures. A comparison of their structural, magnetic, transport and thermal properties is reported in the present study. The size of the particles and their agglomeration extent increase with increasing reaction temperature. The sample prepared at 900 °C showed the highest superconducting transition temperature (T c ) of 16.2 K with a transition width, ∼1.8 K, as obtained from the resistivity measurement on cold-pressed bars. Above T c , magnetization measurements revealed the presence of surface ferromagnetism which coexists with superconductivity below T c . Heat capacity measurements confirm superconductivity with strong electron–phonon coupling constant. The sample prepared at 800 °C shows a lower T c (10 K) while that prepared at 700 °C exhibit no superconductivity down to the lowest temperature (3 K) measured. - Highlights: ► Synthesis of δ-NbN nanoparticles by urea nitridation of NbCl 5 . ► Superconducting transition temperature (T c ) is 16.2 K. ► Superconductivity and surface ferromagnetism coexist in the nanoparticles. ► Effect of size and agglomeration on the physical properties of nanoparticles

  12. Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

    Science.gov (United States)

    Lu, Tsung-Ju; Fanto, Michael; Choi, Hyeongrak; Thomas, Paul; Steidle, Jeffrey; Mouradian, Sara; Kong, Wei; Zhu, Di; Moon, Hyowon; Berggren, Karl; Kim, Jeehwan; Soltani, Mohammad; Preble, Stefan; Englund, Dirk

    2018-04-30

    We demonstrate a wide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum. We measure ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. This platform opens up new possibilities in integrated quantum optics with trapped ions or atom-like color centers in solids, as well as classical applications including nonlinear optics and on-chip UV-spectroscopy.

  13. The Advanced Aluminum Nitride Synthesis Methods and Its Applications: Patent Review.

    Science.gov (United States)

    Shishkin, Roman A; Elagin, Andrey A; Mayorova, Ekaterina S; Beketov, Askold R

    2016-01-01

    High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. However, there is no up-to-date review considering the major issues and the technical solutions for different methods. This review aims to investigate the advanced methods of aluminum nitride synthesis and its development tendencies. Also the aluminum nitride application patents and prospects for development of the branch have been considered. The patent search on "aluminum nitride synthesis" has been carried out. The research activity has been analyzed. Special attention has been paid to the patenting geography and the leading researchers in aluminum nitride synthesis. Aluminum nitride synthesis methods have been divided into 6 main groups, the most studied approaches are carbothermal reduction (88 patents) and direct nitridation (107 patents). The current issues for each group have been analyzed; the main trends are purification of the final product and nanopowder synthesis. The leading researchers in aluminum nitride synthesis have represented 5 countries, namely: Japan, China, Russia, South Korea and USA. The main aluminum nitride application spheres are electronics (59,1 percent of applications) and new materials manufacturing (30,9 percent). The review deals with the state of the art data in nanosized aluminum nitride synthesis, the major issues and the technical solutions for different synthesis methods. It gives a full understanding of the development tendencies and of the current leaders in the sphere.

  14. Preparation and characterization of morph-genetic aluminum nitride/carbon composites from filter paper

    International Nuclear Information System (INIS)

    Wang Wei; Xue Tao; Jin Zhihao; Qiao Guanjun

    2008-01-01

    Morph-genetic aluminum nitride/carbon composites with cablelike structure were prepared from filter paper template through the surface sol-gel process and carbothermal nitridation reaction. The resulting materials have a hierarchical structure originating from the morphology of cellulose paper. The aluminum nitride/carbon composites have the core-shell microstructure, the core is graphitic carbon, and the shell is aluminum nitride nanocoating formed by carbothermal nitridation reduction of alumina with the interfacial carbon in nitrogen atmosphere. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscope were employed to characterize the structural morphology and phase compositions of the final products

  15. AlN powder synthesis via nitriding reaction of aluminum sub-chloride

    Energy Technology Data Exchange (ETDEWEB)

    Ohashi, T.; Nishida, T.; Sugiura, M. (Waseda Univ., Tokyo (Japan). Graduate School); Fuwa, A. (Waseda Univ., Tokyo (Japan))

    1993-06-01

    In order to obtain the pertinent properties of aluminium nitride in its sintered form, it is desirable to have powders of finer sizes with narrower size distribution and higher purity, thereby making the sintering processing easier and the final body denser. Instead of using sublimated aluminum tri-chloride vapor (AlCl3) as an aluminum source in the vapor phase nitriding reaction, the mixed aluminum chloride vapor consisted of aluminum tri-chloride, bi-chloride and mono-chloride are used in the reaction with ammonia at temperatures of 1000 and 1200K. The mixed chloride vapors are produced by reacting chlorine with molten aluminum at 1000 or 1200K under atmospheric pressure. The reaction of this mixed chloride vapor with ammonia is then experimentally investigated to study the aluminum nitride powder morphology. The aluminum nitride powders synthesized under various ammonia concentrations are characterized for size distribution, mean particle size and particle morphology. 24 refs., 8 figs., 2 tabs.

  16. Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Stegmaier, M.; Ebert, J.; Pernice, W. H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, 76133 Karlsruhe (Germany); Meckbach, J. M.; Ilin, K.; Siegel, M. [Institute of Micro- und Nanoelectronic Systems, Karlsruhe Institute of Technology, 76187 Karlsruhe (Germany)

    2014-03-03

    Aluminum nitride (AlN) has recently emerged as a promising material for integrated photonics due to a large bandgap and attractive optical properties. Exploiting the wideband transparency, we demonstrate waveguiding in AlN-on-Insulator circuits from near-infrared to ultraviolet wavelengths using nanophotonic components with dimensions down to 40 nm. By measuring the propagation loss over a wide spectral range, we conclude that both scattering and absorption of AlN-intrinsic defects contribute to strong attenuation at short wavelengths, thus providing guidelines for future improvements in thin-film deposition and circuit fabrication.

  17. The initial growth stage in PVT growth of aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Heimann, P.; Epelbaum, B.M.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany); Nagata, S. [Functional Materials Development Center, Research Laboratories, JFE Mineral Company, Ltd., 1, Niihama-cho, Chuou-ku, Chiba-shi, Chiba 260-0826 (Japan)

    2006-06-15

    The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates is the formation of an aluminum oxynitride (AlON) layer at temperatures between 1850-1950 C leading to polycrystalline growth. On the contrary, heteroepitaxial growth of AlN on silicon carbide (SiC) is relatively easy to achieve due to natural formation of a thin molten layer of (Al{sub 2}OC{sub x}) on the seed surface and consequent growth of AlN via the molten buffer layer. Optimization of the seeding process can be achieved by use of ultra-pure starting material. Another critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion coefficients. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Synthesis of nanocrystalline magnesium nitride (Mg3N2) powder using thermal plasma

    International Nuclear Information System (INIS)

    Kim, Dong-Wook; Kim, Tae-Hee; Park, Hyun-Woo; Park, Dong-Wha

    2011-01-01

    Nanocrystalline magnesium nitride (Mg 3 N 2 ) powder was synthesized from bulk magnesium by thermal plasma at atmospheric pressure. Magnesium vapor was generated through heating the bulk magnesium by DC plasma jet and reacted with ammonia gas. Injecting position and flow rates of ammonia gas were controlled to investigate an ideal condition for Mg 3 N 2 synthesis. The synthesized Mg 3 N 2 was cooled and collected on the chamber wall. Characteristics of the synthesized powders for each experimental condition were analyzed by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and thermogravity analysis (TGA). In absence of NH 3 , magnesium metal powder was formed. The synthesis with NH 3 injection in low temperature region resulted in a formation of crystalline magnesium nitride with trigonal morphology, whereas the mixture of magnesium metal and amorphous Mg 3 N 2 was formed when NH 3 was injected in high temperature region. Also, vaporization process of magnesium was discussed.

  19. Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

    Science.gov (United States)

    Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

    2016-04-26

    An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

  20. Size dependence of elastic mechanical properties of nanocrystalline aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Wenwu; Dávila, Lilian P., E-mail: ldavila@ucmerced.edu

    2017-04-24

    The effect of grain size on the elastic mechanical properties of nanocrystalline pure metal Al is quantified by molecular dynamics simulation method. In this work, the largest nanocrystalline Al sample has a mean grain size of 29.6 nm and contains over 100 millions atoms in the modeling system. The simulation results show that the elastic properties including elastic modulus and ultimate tensile strength of nanocrystalline Al are relatively insensitive to the variation of mean grain size above 13 nm yet they become distinctly grain size dependent below 13 nm. Moreover, at a grain size <13 nm, the elastic modulus decreases monotonically with decreasing grain size while the ultimate tensile strength of nanocrystalline Al initially decreases with the decrease of the grain size down to 9 nm and then increases with further reduction of grain size. The increase of ultimate tensile strength below 9 nm is believed to be a result of an extended elasticity in the ultrafine grain size nanocrystalline Al. This study can facilitate the prediction of varied mechanical properties for similar nanocrystalline materials and even guide testing and fabrication schemes of such materials.

  1. An experimental study on the aluminum nitride flux detector

    International Nuclear Information System (INIS)

    Moon, Byung Soo; Hwang, In Koo; Chung, Chong Eun; Kwon, Kee Choon

    2004-06-01

    The result of a study on the 'development of a solid state flux monitor' performed as a part of the I-NERI project 'development of enhanced reactor operation through improved sensing and control at nuclear power pants' is described in this report. Dozens of aluminum nitride based flux sensors have been fabricated with different sizes 3mm x 3mm x 0.635mm and 3mm x 3mm x 0.381mm by ORNL and were packaged with MGO insulation by KAERI for a feasibility study to use them as the in-core flux monitor in the nuclear power plants. In chapter 1, we describe the basic properties of the aluminum nitride and the geometric shape of the fabricated detectors with the signal cables attached. In chapter 2, we describe the calculation results based on the EGS4 and MCNP4B code to determine the neutron sensitivity of the aluminum nitride and the optimal thickness for the gamma rejection for the case of the detectors being used in the pulse mode operation. In chapter 3, we describe the results of measurements for the insulation resistance and of the experiments to determine the optimum operating voltage of the sensors after the packaging with long cables attached. In chapter 4, we describe the results of experiments to measure the high gamma flux from the 187Ci Co60, 77,000Ci Co60, and the 200,000Ci Co60 at the high level irradiation facility at KAERI at various distances and compared the results with the EGS4 based calculation results. In chapter 5, we describe the results of pulse counts at the IR beam port of the Hanaro reactor, the low flux measurements in the current mode at the Pohang accelerator, and the high flux measurements in the current mode inside the cold neutron source hole of the Hanaro reacter. Finally, in chapter 6, we analyze the results of the above experiments and describe the necessary future work

  2. An experimental study on the aluminum nitride flux detector

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Byung Soo; Hwang, In Koo; Chung, Chong Eun; Kwon, Kee Choon

    2004-06-01

    The result of a study on the 'development of a solid state flux monitor' performed as a part of the I-NERI project 'development of enhanced reactor operation through improved sensing and control at nuclear power pants' is described in this report. Dozens of aluminum nitride based flux sensors have been fabricated with different sizes 3mm x 3mm x 0.635mm and 3mm x 3mm x 0.381mm by ORNL and were packaged with MGO insulation by KAERI for a feasibility study to use them as the in-core flux monitor in the nuclear power plants. In chapter 1, we describe the basic properties of the aluminum nitride and the geometric shape of the fabricated detectors with the signal cables attached. In chapter 2, we describe the calculation results based on the EGS4 and MCNP4B code to determine the neutron sensitivity of the aluminum nitride and the optimal thickness for the gamma rejection for the case of the detectors being used in the pulse mode operation. In chapter 3, we describe the results of measurements for the insulation resistance and of the experiments to determine the optimum operating voltage of the sensors after the packaging with long cables attached. In chapter 4, we describe the results of experiments to measure the high gamma flux from the 187Ci Co60, 77,000Ci Co60, and the 200,000Ci Co60 at the high level irradiation facility at KAERI at various distances and compared the results with the EGS4 based calculation results. In chapter 5, we describe the results of pulse counts at the IR beam port of the Hanaro reactor, the low flux measurements in the current mode at the Pohang accelerator, and the high flux measurements in the current mode inside the cold neutron source hole of the Hanaro reacter. Finally, in chapter 6, we analyze the results of the above experiments and describe the necessary future work.

  3. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

    DEFF Research Database (Denmark)

    Meijs, Suzan; McDonald, Matthew; Sørensen, Søren

    2015-01-01

    The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film...

  4. Mechanisms of dynamic deformation and dynamic failure in aluminum nitride

    International Nuclear Information System (INIS)

    Hu Guangli; Chen, C.Q.; Ramesh, K.T.; McCauley, J.W.

    2012-01-01

    Uniaxial quasi-static, uniaxial dynamic and confined dynamic compression experiments have been performed to characterize the failure and deformation mechanisms of a sintered polycrystalline aluminum nitride using a servohydraulic machine and a modified Kolsky bar. Scanning electron microscopy and transmission electron microscopy (TEM) are used to identify the fracture and deformation mechanisms under high rate and high pressure loading conditions. These results show that the fracture mechanisms are strong functions of confining stress and strain rate, with transgranular fracture becoming more common at high strain rates. Dynamic fracture mechanics and micromechanical models are used to analyze the observed fracture mechanisms. TEM characterization of fragments from the confined dynamic experiments shows that at higher pressures dislocation motion becomes a common dominant deformation mechanism in AlN. Prismatic slip is dominant, and pronounced microcrack–dislocation interactions are observed, suggesting that the dislocation plasticity affects the macroscopic fracture behavior in this material under high confining stresses.

  5. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

    International Nuclear Information System (INIS)

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

    2013-01-01

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

  6. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  7. Fabrication of aluminum nitride crucibles for molten salt and plutonium compatibility studies

    International Nuclear Information System (INIS)

    Phillips, J.A.

    1991-01-01

    The overall objective of this research was to fabricate a calcium oxide sinter-aided aluminum nitride crucible and determine the compatibility of this crucible with molten chloride salts and plutonium metal in the DOR process. Calcium oxide sinter-aided aluminum nitride was preferred over yttrium oxide sinter-aided aluminum nitride because of (1) the presence of calcium chloride, calcium oxide, and calcium metal in the molten salts utilized in the DOR process, and (2) the higher volatility of the secondary phases formed compared with phases resulting from the addition of yttrium oxide during the aluminum nitride sintering process. The calcium oxide system may yield a higher purity crystal structure with fewer secondary phases present than in the yttrium oxide system. The secondary phases that are present in the grain boundaries may be unreactive with the calcium chloride salt due to the presence of calcium in the secondary phases

  8. Gas-Phase Combustion Synthesis of Aluminum Nitride Powder

    Science.gov (United States)

    Axelbaum, R. L.; Lottes, C. R.; Huertas, J. I.; Rosen, L. J.

    1996-01-01

    Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum nitride (AlN) is a highly desirable material for electronics applications. Methods are being sought for synthesis of unagglomerated, nanometer-sized powders of this material, prepared in such a way that they can be consolidated into solid compacts having minimal oxygen content. A procedure for synthesizing these powders through gas-phase combustion is described. This novel approach involves reacting AlCl3, NH3, and Na vapors. Equilibrium thermodynamic calculations show that 100% yields can be obtained for these reactants with the products being AlN, NaCl, and H2. The NaCl by-product is used to coat the AlN particles in situ. The coating allows for control of AlN agglomeration and protects the powders from hydrolysis during post-flame handling. On the basis of thermodynamic and kinetic considerations, two different approaches were employed to produce the powder, in co-flow diffusion flame configurations. In the first approach, the three reactants were supplied in separate streams. In the second, the AlCl3 and NH3 were premixed with HCl and then reacted with Na vapor. X-ray diffraction (XRD) spectra of as-produced powders show only NaCl for the first case and NaCl and AlN for the second. After annealing at 775 C tinder dynamic vacuum, the salt was removed and XRD spectra of powders from both approaches show only AlN. Aluminum metal was also produced in the co-flow flame by reacting AlCl3 with Na. XRD spectra of as-produced powders show the products to be only NaCl and elemental aluminum.

  9. Nanosized aluminum nitride hollow spheres formed through a self-templating solid-gas interface reaction

    International Nuclear Information System (INIS)

    Zheng Jie; Song Xubo; Zhang Yaohua; Li Yan; Li Xingguo; Pu Yikang

    2007-01-01

    Nanosized aluminum nitride hollow spheres were synthesized by simply heating aluminum nanoparticles in ammonia at 1000 deg. C. The as-synthesized sphere shells are polycrystalline with cavity diameters ranging from 15 to 100 nm and shell thickness from 5 to 15 nm. The formation mechanism can be explained by the nanoscale Kirkendall effect, which results from the difference in diffusion rates between aluminum and nitrogen. The Al nanoparticles served as both reactant and templates for the hollow sphere formation. The effects of precursor particle size and temperature were also investigated in terms of product morphology. Room temperature cathode luminescence spectrum of the nanosized hollow spheres showed a broad emission band centered at 415 nm, which is originated from oxygen related luminescence centers. The hollow structure survived a 4-h heat treatment at 1200 deg. C, exhibiting excellent thermal stability. - Graphical abstract: Nanosized aluminum nitride hollow spheres were synthesized by nitridation of aluminum nanoparticles at 1000 deg. C using ammonia

  10. Reassembling Solid Materials by Femtosecond Laser Ablation: Case of Aluminum Nitride

    Science.gov (United States)

    Kobayashi, Tohru; Matsuo, Yukari

    2013-06-01

    Through atomization and ionization, we could completely alter the composition of a nonconductive material, aluminum nitride, by femtosecond laser ablation. Preferential production of pure aluminum cluster cations Aln+ (n≤32) reflects not only their higher energetic stability compared with mixed clusters AlnNm+ but also completion of thermal relaxation in ablation plasma. Observation of metastable dissociation of Aln+ indicates that cluster cations have still enough internal energy for dissociation to occur, although the process is much slower than the cluster formation. Almost no cluster formation has been observed after nanosecond laser ablation of aluminum nitride, which highlights the distinct nature of ablation plasma produced by femtosecond laser ablation.

  11. Aluminum Nitride Ceramic as an Optically Stimulable Luminescence Dosimeter Plate

    Directory of Open Access Journals (Sweden)

    Go Okada

    2016-04-01

    Full Text Available Photostimulable storage phosphors have been used in a wide range of applications including radiation measurements in one- and two-dimensional spaces, called point dosimetry and radiography. In this work, we report that an aluminum nitride (AlN ceramic plate, which is practically used as a heat sink (SHAPAL®, Tokuyama Corp., Yamaguchi, Japan, shows good optically-stimulated luminescence (OSL properties with sufficiently large signal and capability for imaging applications, and we have characterized the AlN plate for OSL applications. Upon interaction with X-rays, the sample color turns yellowish, due to a radiation-induced photoabsorption band in the UV-blue range below ~500 nm. After irradiating the sample with X-rays, an intense OSL emission can be observed in the UV (360 nm spectral region during stimulation by red light. Although our measurement setup is not optimized, dose detection was confirmed as low as ~3 mGy to over 20 Gy. Furthermore, we have successfully demonstrated that the SHAPAL® AlN ceramic plate has great potential to be used as an imaging plate in radiography.

  12. A review: aluminum nitride MEMS contour-mode resonator

    Science.gov (United States)

    Yunhong, Hou; Meng, Zhang; Guowei, Han; Chaowei, Si; Yongmei, Zhao; Jin, Ning

    2016-10-01

    Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR. Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32).

  13. Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes

    International Nuclear Information System (INIS)

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Kuwano, Noriyuki

    2007-01-01

    Highly c-axis-oriented aluminum nitride (AlN) thin films have been prepared on titanium (Ti) bottom electrodes by using AlN interlayers. The AlN interlayers were deposited between Ti electrodes and silicon (Si) substrates, such as AlN/Ti/AlN/Si. The crystallinity and crystal orientation of the AlN films and Ti electrodes strongly depended on the thickness of the AlN interlayers. Although the sputtering conditions were the same, the X-ray diffraction intensity of AlN (0002) and Ti (0002) planes drastically increased, and the full-width at half-maximum (FWHM) of the X-ray rocking curves decreased from 5.1 o to 2.6 o and from 3.3 o to 2.0 o , respectively. Furthermore, the piezoelectric constant d 33 of the AlN films was significantly improved from - 0.2 to - 4.5 pC/N

  14. Low temperature aluminum nitride thin films for sensory applications

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

    2016-07-15

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  15. Microstructure of Nitrided Aluminum Alloys Using an Electron-Beam-Excited-Plasma (EBEP)

    Institute of Scientific and Technical Information of China (English)

    L. Liu; A. Yamamoto; T. Hishida; H. Shoyama; T. Hara; T. Hara

    2004-01-01

    Nitriding of surface of aluminum alloys was carried out with using an electron-beam-excited-plasma (EBEP)technique. The EBEP is sustained by electron impact ionization with energetic electron beam. Two kinds of substrates,aluminum alloys AA5052 and AA5083, were exposed to the down flow of EBEP source at 843 K for 45min. The specimens were characterized with respect to following properties: crystallographic structure (XRD), morphology (SEM) and the cross sectional microstructures of the nitrided layer was observed using a scanning electron microscopy (SEM). There are some Al2O3 particles on the surface of the nitrided AA5052 and AA5083. The AIN layers were formed on the substrates with the thickness of 4.5 μ m for AA5052 and 0.5 μ m for AA5083. A relatively uniform nitrided surface layer composed of AIN can be observed on the AA5052 substrate. The grains size near the interfaces between the substrate and AIN layer were smaller than that near the surface. On the surface of AIN layer, the concentration of nitrogen was high and in the middle of AIN layer it had a constant concentration like the aluminum and the concentration was decreased with approaching to the interface. On the surface of nitrided AA5083, a uniform AIN layer was not formed as the reason for the high nitriding temperature.

  16. Synthesis of Aluminum-Aluminum Nitride Nanocomposites by a Gas-Liquid Reaction II. Microstructure and Mechanical Properties

    Science.gov (United States)

    Borgonovo, Cecilia; Makhlouf, Makhlouf M.

    2016-04-01

    In situ fabrication of the reinforcing particles in the metal matrix is an answer to many of the challenges encountered in manufacturing aluminum matrix nanocomposites. In this method, the nanoparticles are formed directly within the melt by means of a chemical reaction between a specially designed aluminum alloy and a gas. In this publication, we describe a process for synthesizing aluminum-aluminum nitride nanocomposites by reacting a nitrogen-containing gas with a molten aluminum-lithium alloy. We quantify the effect of the process parameters on the average particle size and particle distribution, as well as on the tendency of the particles to cluster in the alloy matrix, is quantified. Also in this publication, we present the measured room temperature and elevated temperature tensile properties of the nanocomposite material as well as its measured room temperature impact toughness.

  17. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  18. Sample Size Induced Brittle-to-Ductile Transition of Single-Crystal Aluminum Nitride

    Science.gov (United States)

    2015-08-01

    ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum...originator. ARL-RP-0528 ● AUG 2015 US Army Research Laboratory Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal...Sample Size Induced Brittle-to- Ductile Transition of Single-Crystal Aluminum Nitride 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

  19. Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

    International Nuclear Information System (INIS)

    Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

    2003-01-01

    AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

  20. Coplanar transitions based on aluminum nitride interposer substrate for terabit transceivers

    DEFF Research Database (Denmark)

    Dong, Yunfeng; Johansen, Tom Keinicke; Zhurbenko, Vitaliy

    2017-01-01

    This paper presents two types of coplanar transitions based on aluminum nitride (AlN) substrate for interposer designs of terabit transceivers. The designs of coupled coplanar waveguide (CCPW), coupled line, coplanar waveguide (CPW), and coplanar stripline (CPS) based on AlN substrate are explained...

  1. Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

    International Nuclear Information System (INIS)

    Szállás, A.; Szász, K.; Trinh, X. T.; Son, N. T.; Janzén, E.; Gali, A.

    2014-01-01

    We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

  2. Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Szállás, A., E-mail: szallas.attila@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Szász, K. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Physics, Eötvös University, Pázmány Péter sétány 1/A, H-1117 Budapest (Hungary); Trinh, X. T.; Son, N. T.; Janzén, E. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Gali, A., E-mail: gali.adam@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest (Hungary)

    2014-09-21

    We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

  3. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  4. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  5. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  6. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  7. The use of aluminum nitride to improve Aluminum-26 Accelerator Mass Spectrometry measurements and production of Radioactive Ion Beams

    Science.gov (United States)

    Janzen, Meghan S.; Galindo-Uribarri, Alfredo; Liu, Yuan; Mills, Gerald D.; Romero-Romero, Elisa; Stracener, Daniel W.

    2015-10-01

    We present results and discuss the use of aluminum nitride as a promising source material for Accelerator Mass Spectrometry (AMS) and Radioactive Ion Beams (RIBs) science applications of 26Al isotopes. The measurement of 26Al in geological samples by AMS is typically conducted on Al2O3 targets. However, Al2O3 is not an ideal source material because it does not form a prolific beam of Al- required for measuring low-levels of 26Al. Multiple samples of aluminum oxide (Al2O3), aluminum nitride (AlN), mixed Al2O3-AlN as well as aluminum fluoride (AlF3) were tested and compared using the ion source test facility and the stable ion beam (SIB) injector platform at the 25-MV tandem electrostatic accelerator at Oak Ridge National Laboratory. Negative ion currents of atomic and molecular aluminum were examined for each source material. It was found that pure AlN targets produced substantially higher beam currents than the other materials and that there was some dependence on the exposure of AlN to air. The applicability of using AlN as a source material for geological samples was explored by preparing quartz samples as Al2O3 and converting them to AlN using a carbothermal reduction technique, which involved reducing the Al2O3 with graphite powder at 1600 °C within a nitrogen atmosphere. The quartz material was successfully converted to AlN. Thus far, AlN proves to be a promising source material and could lead towards increasing the sensitivity of low-level 26Al AMS measurements. The potential of using AlN as a source material for nuclear physics is also very promising by placing 26AlN directly into a source to produce more intense radioactive beams of 26Al.

  8. Study of aluminum nitride precipitation in Fe- 3%Si steel

    Directory of Open Access Journals (Sweden)

    F.L. Alcântara

    2013-01-01

    Full Text Available For good performance of electrical steels it is necessary a high magnetic induction and a low power loss when submitted to cyclic magnetization. A fine dispersion of precipitates is a key requirement in the manufacturing process of Fe- 3%Si grain oriented electrical steel. In the production of high permeability grain oriented steel precipitate particles of copper and manganese sulphides and aluminium nitride delay normal grain growth during primary recrystallization, causing preferential growth of grains with Goss orientation during secondary recrystallization. The sulphides precipitate during the hot rolling process. The aluminium nitride particles are formed during hot rolling and the hot band annealing process. In this work AlN precipitation during hot deformation of a high permeability grain oriented 3%Si steel is examined. In the study, transfer bar samples were submitted to controlled heating, compression and cooling treatments in order to simulate a reversible hot rolling finishing. The samples were analyzed using the transmission electron microscope (TEM in order to identify the precipitates and characterize size distribution. Precipitate extraction by dissolution method and analyses by inductively coupled plasma optical emission spectrometry (ICP-OES were used to quantify the precipitation. The results allowed to describe the precipitation kinetics by a precipitation-time-temperature (PTT diagram for AlN formation during hot rolling.

  9. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    Science.gov (United States)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  10. Effect of Nano-crystalline Ceramic Coats Produced by Plasma Electrolytic Oxidation on Corrosion Behavior of AA5083 Aluminum Alloy

    International Nuclear Information System (INIS)

    Thayananth, T.; Muthupandi, V.; Rao, S. R. Koteswara

    2010-01-01

    High specific strength offered by aluminum and magnesium alloys makes them desirable in modern transportation industries. Often the restrictions imposed on the usage of these alloys are due to their poor tribological and corrosion properties. However, their corrosion properties can be further enhanced by synthesizing ceramic coating on the substrate through Plasma Electrolytic Oxidation (PEO) process. In this study, nano-crystalline alumina coatings were formed on the surface of AA5083 aluminum alloy test coupons using PEO process in aqueous alkali-silicate electrolyte with and without addition of sodium aluminate. X-ray diffraction (XRD) studies showed that the crystallite size varied between 38 and 46 nm and α- and γ- alumina were the dominant phases present in the coatings. Corrosion studies by potentiodynamic polarization tests in 3.5% NaCl revealed that the electrolyte composition has an influence on the corrosion resistance of nano-crystalline oxide layer formed.

  11. Thermal conductivity of aluminum nitride ceramics. Waermeleitfaehigkeit von Aluminiumnitrid-Keramik

    Energy Technology Data Exchange (ETDEWEB)

    Ruessel, C.; Hofmann, T.; Limmer, G. (Erlangen-Nuernberg Univ., Erlangen (Germany, F.R.). Inst. fuer Werkstoffwissenschaften 3)

    Aluminium nitride ceramics made by the authors, as well as others produced commercially, mostly using yttrium oxide as an additive, were characterized with respect to their phase and chemical composition, their microstructure, and their thermal conductivity. It was shown that conventional ideas, especially with regard to the correlations between thermal conductivity and the oxygen content and the microstructure, could not withstand a critical examination. Instead, a connection can be seen between the oxygen not bound up in yttrium-aluminum garnet and thermal conductivity. Relatively low thermal conductivities were always observed when yttrium-aluminum garnet was present as a grain-boundary phase; in contrast, high values of thermal conductivity were seen when the yttrium-aluminum garnet was present in the form of isolated grains. (orig.).

  12. Progress in efficient doping of high aluminum-containing group III-nitrides

    Science.gov (United States)

    Liang, Y.-H.; Towe, E.

    2018-03-01

    The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

  13. Deposition of single-layer and graded aluminum nitride coatings on vanadium substrates using ion-beam assisted reactive evaporation (ITER task no. ETA-EC-BLR26)

    International Nuclear Information System (INIS)

    Jamarani, F.; Lang, R.; Owles, R.

    1994-06-01

    The objective of the project has been to develop a reactive evaporation process for the fabrication of aluminum nitride coatings on pure vanadium substrates. The aluminum nitride coatings are to be used as electrical insulators on the surfaces of structural materials in contact with liquid metal coolants. (author). 9 refs., 2 tabs., 5 figs

  14. A nanoindentation study of magnetron co-sputtered nanocrystalline ternary nitride coatings

    Directory of Open Access Journals (Sweden)

    Yeung W.Y.

    2006-01-01

    Full Text Available Nanoindentation testing was used to determine the hardness, elastic modulus and plasticity parameter of three newly developed ternary nitride coatings with nano-sized grains. With decreasing nitrogen deposition pressure, grain diameter of the coatings decreases that leads to both higher nanohardness and elastic modulus with conservation of satisfactory values of plasticity characteristic.

  15. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  16. Effect of compacting pressure, powder degassing and thermobaric treatment on densification and properties of nanocrystalline titanium nitride

    Directory of Open Access Journals (Sweden)

    Andrei V. Kapylou

    2009-09-01

    Full Text Available The effects of compacting pressure, powder degassing and high pressure sintering temperature and time on the densification and properties of nanocrystalline titanium nitride have been investigated. For this reason, TiN powder with a mean particle size of 55 nm was pressed in the range of compacting pressure from 0.2 to 1.0 GPa and sintered under static pressure of 3.5 GPa in the temperature range of 900–1600°C for 45–120 s. Some of green bodies were degassed in vacuum before sintering. It was shown that samples compacted in the pressure range of 0.2–0.6 GPa have the highest density after the thermobaric treatment. The maximum density (about 97.3 %TD was obtained with degassed samples. Microhardness and microstructure investigations have shown that recrystallization of the TiN nanopowder begins at the sintering temperatures of 1100–1200°C and sintering time less than one minute. The maximum microhardness obtained was 23.2±1.0 GPa and themaximum Young modulus was 370 GPa.

  17. The effect of He and swift heavy ions on nanocrystalline zirconium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Janse van Vuuren, A., E-mail: arnojvv@gmail.com [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Uglov, V.V. [Belarusian State University, Minsk (Belarus); Petrovich, S. [VINCA Institute of Nuclear Sciences, Belgrade University, Belgrade (Serbia)

    2014-05-01

    Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also for candidate materials for use as inert matrix fuel hosts. These materials will accumulate helium via (n, α) reactions and will also be subjected to irradiation by fission fragments. Cross-sectional transmission electron microscopy and scanning electron microscopy was used to study nanocrystalline ZrN irradiated with 30 keV He to fluences between 10{sup 16} and 5 × 10{sup 16} cm{sup −2}, 167 MeV Xe to fluences between 5 × 10{sup 13} and 10{sup 14} cm{sup −2} and also 695 MeV Bi to a fluence of 1.5 × 10{sup 13} cm{sup −2}. He/Bi and He/Xe irradiated samples were annealed at temperatures between 600 and 1000 °C and were analysed using SEM, XTEM and selected area diffraction. The results indicated that post irradiation heat treatment induces exfoliation at a depth that corresponds to the end-of-range of 30 keV He ions. SEM and XTEM analysis of He/Xe irradiated samples revealed that electronic excitation effects, due to Xe ions, suppress helium blister formation and consequently the exfoliation processes. He/Bi samples however do not show the same effects. This suggests that nanocrystalline ZrN is prone to the formation of He blisters which may ultimately lead material failure. These effects may however be mitigated by electronic excitation effects from certain SHIs.

  18. The effect of He and swift heavy ions on nanocrystalline zirconium nitride

    International Nuclear Information System (INIS)

    Janse van Vuuren, A.; Neethling, J.H.; Skuratov, V.A.; Uglov, V.V.; Petrovich, S.

    2014-01-01

    Recent studies have shown that swift heavy ion irradiation may significantly modulate hydrogen and helium behaviour in some materials. This phenomenon is of considerable practical interest for ceramics in general and also for candidate materials for use as inert matrix fuel hosts. These materials will accumulate helium via (n, α) reactions and will also be subjected to irradiation by fission fragments. Cross-sectional transmission electron microscopy and scanning electron microscopy was used to study nanocrystalline ZrN irradiated with 30 keV He to fluences between 10 16 and 5 × 10 16 cm −2 , 167 MeV Xe to fluences between 5 × 10 13 and 10 14 cm −2 and also 695 MeV Bi to a fluence of 1.5 × 10 13 cm −2 . He/Bi and He/Xe irradiated samples were annealed at temperatures between 600 and 1000 °C and were analysed using SEM, XTEM and selected area diffraction. The results indicated that post irradiation heat treatment induces exfoliation at a depth that corresponds to the end-of-range of 30 keV He ions. SEM and XTEM analysis of He/Xe irradiated samples revealed that electronic excitation effects, due to Xe ions, suppress helium blister formation and consequently the exfoliation processes. He/Bi samples however do not show the same effects. This suggests that nanocrystalline ZrN is prone to the formation of He blisters which may ultimately lead material failure. These effects may however be mitigated by electronic excitation effects from certain SHIs

  19. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    Science.gov (United States)

    Choudhary, R. K.; Mishra, S. C.; Mishra, P.; Limaye, P. K.; Singh, K.

    2015-11-01

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias.

  20. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-04-01

    This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

  1. Application of wetting to fabrication of boron nitride/aluminum composites

    International Nuclear Information System (INIS)

    Fujii, Hidetoshi; Nakae, Hideo; Okada, Koji

    1993-01-01

    The focus of this paper is the establishment of a cheap and easy method of manufacturing metal matrix composites by optimizing the wetting and structural properties of the materials used, (i.e. boron nitride/aluminum). Although aluminum is one of the most prominent metals in the fabrication of metal matrix composites, the oxidation of aluminum prevents us from precisely measuring the wetting of ceramics. Therefore, an improved sessile drop method was devised to prevent the oxidation of the aluminum. Using this method, the contact angle between h-BN (hexagonal-BN) and molten Al was measured in a purified He+3%H 2 atmosphere and in a very high vacuum in a temperature range of 1173-1373K. The contact angle progressed through four phases similar to typical ceramics. However, the contact angle became 0 degree in phase 4 at and over 1273K. This contact angle is extremely lower than the contact angles for typical ceramics and it indicates that h-BN is an ideal material for manufacturing a metal matrix composite from the viewpoint of wetting. It was also confirmed that AlN was produced at the solid/liquid interface and caused the contact angle to decrease to 0 degree. AlN has good structural properties whereas h-BN does not. Accordingly, it is suggested that h-BN particles, which have good wetting, be inserted into the Al melt. This will cause the surface of the h-BN to be converted into AlN which has good structural properties. Using this process, a metal matrix composite, which has good structural properties, should be produced. Further, since h-BN is lubricious, a material should be produced which has high wear resistance and good lubricating properties

  2. Structure and hemocompatibility of nanocrystalline titanium nitride produced under glow-discharge conditions

    Science.gov (United States)

    Sowińska, Agnieszka; Czarnowska, Elżbieta; Tarnowski, Michał; Witkowska, Justyna; Wierzchoń, Tadeusz

    2018-04-01

    Significant efforts are being made towards developing novel antithrombotic materials. The purpose of the presented study was to characterize two variants of nitrided surface layers produced on alloy Ti-6Al-4V in different areas of low-temperature plasma - at the plasma potential (TiNp) or at the cathode potential (TiNc). The layers were characterized in terms of their microstructure, surface topography and wettability, and platelet response to the environment of different pH. The produced layers were of the TiN + Ti2N + αTiN-type, but the layer produced at the plasma potential was thinner, smoother and had lower surface free energy compared with that produced at the cathode potential. Biological evaluation demonstrated more fibrinogen buildup, less platelet adhesion and aggregation, and fewer strongly activated platelets on the TiNp surface compared with those parameters on the TiNc surface and on the titanium alloy in its initial state. Interestingly, both surface types were significantly resistant to fibrinogen adsorption and platelet adhesion in the environment of lower pH. In conclusion, the nitrided surface layer produced at the plasma potential is a promising material and this basic information is critical for further development of hemocompatible materials.

  3. Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

    2016-06-30

    Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

  4. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  5. Plasma synthesis and HPHT consolidation of BN nanoparticles, nanospheres, and nanotubes to produce nanocrystalline cubic boron nitride

    Science.gov (United States)

    Stout, Christopher

    Plasma methods offer a variety of advantages to nanomaterials synthesis. The process is robust, allowing varying particle sizes and phases to be generated simply by modifying key parameters. The work here demonstrates a novel approach to nanopowder synthesis using inductively-coupled plasma to decompose precursor, which are then quenched to produce a variety of boron nitride (BN)-phase nanoparticles, including cubic phase, along with short-range-order nanospheres (e.g., nano-onions) and BN nanotubes. Cubic BN (c-BN) powders can be generated through direct deposition onto a chilled substrate. The extremely-high pyrolysis temperatures afforded by the equilibrium plasma offer a unique particle growth environment, accommodating long deposition times while exposing resulting powders to temperatures in excess of 5000K without any additional particle nucleation and growth. Such conditions can yield short-range ordered amorphous BN structures in the form of 20nm diameter nanospheres. Finally, when introducing a rapid-quenching counter-flow gas against the plasma jet, high aspect ratio nanotubes are synthesized, which are collected on substrate situated radially. The benefits of these morphologies are also evident in high-pressure/high-temperature consolidation experiments, where nanoparticle phases can offer a favorable conversion route to super-hard c-BN while maintaining nanocrystallinity. Experiments using these morphologies are shown to begin to yield c-BN conversion at conditions as low as 2.0 GPa and 1500°C when using micron sized c-BN seeding to create localized regions of high pressures due to Hertzian forces acting on the nanoparticles.

  6. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  7. Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

    Science.gov (United States)

    Alleyne, Fatima Sierre

    One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective

  8. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  9. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

    Directory of Open Access Journals (Sweden)

    Cristina Besleaga

    2017-11-01

    Full Text Available Aluminum Nitride (AlN has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors. AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate, corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C on Si (100 substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films for the realization of various type of sensors (with emphasis on bio-sensors is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  10. Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

    International Nuclear Information System (INIS)

    Stoker, D. S.; Keto, J. W.; Baek, J.; Wang, W.; Becker, M. F.; Kovar, D.

    2006-01-01

    We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χ xxxx (3) (3ω;ω,ω,ω)=1.52±0.25x10 -13 esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects

  11. Wettability Investigations and Wet Transfer Enhancement of Large-Area CVD-Graphene on Aluminum Nitride.

    Science.gov (United States)

    Knapp, Marius; Hoffmann, René; Cimalla, Volker; Ambacher, Oliver

    2017-08-18

    The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance regarding mass-loading effects . We report on an optimization of the commonly used wet transfer technique for large-area graphene, grown via chemical vapor deposition, onto aluminum nitride (AlN), which is mainly used as an active, piezoelectric material for acoustic devices. Today, graphene wet transfer is well-engineered for silicon dioxide (SiO₂). Investigations on AlN substrates reveal highly different surface properties compared to SiO₂ regarding wettability, which strongly influences the quality of transferred graphene monolayers. Both physical and chemical effects of a plasma treatment of AlN surfaces change wettability and avoid large-scale cracks in the transferred graphene sheet during desiccation. Spatially-resolved Raman spectroscopy reveals a strong strain and doping dependence on AlN plasma pretreatments correlating with the electrical conductivity of graphene. In our work, we achieved transferred crack-free large-area (40 × 40 mm²) graphene monolayers with sheet resistances down to 350 Ω/sq. These achievements make graphene more powerful as an eco-friendly and cheaper replacement for conventional electrode materials used in radio frequency resonator devices.

  12. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    International Nuclear Information System (INIS)

    Choudhary, R.K.; Mishra, S.C.; Mishra, P.; Limaye, P.K.; Singh, K.

    2015-01-01

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias. - Highlights: • Crystalline AlN coatings obtained on stainless steel by reactive sputtering. • Wurtzite AlN formed at higher discharge power and higher substrate biasing. • Mixture of wurtzite and rock salt AlN formed at low power and low biasing. • Substrate negative biasing improved adhesion of AlN coatings. • Substrate negative biasing improved wear resistance and hardness of AlN coatings.

  13. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  14. MEMS flexible artificial basilar membrane fabricated from piezoelectric aluminum nitride on an SU-8 substrate

    International Nuclear Information System (INIS)

    Jang, Jongmoon; Choi, Hongsoo; Jang, Jeong Hun

    2017-01-01

    In this paper, we present a flexible artificial basilar membrane (FABM) that mimics the passive mechanical frequency selectivity of the basilar membrane. The FABM is composed of a cantilever array made of piezoelectric aluminum nitride (AlN) on an SU-8 substrate. We analyzed the orientations of the AlN crystals using scanning electron microscopy and x-ray diffraction. The AIN crystals are oriented in the c -axis (0 0 2) plane and effective piezoelectric coefficient was measured as 3.52 pm V −1 . To characterize the frequency selectivity of the FABM, mechanical displacements were measured using a scanning laser Doppler vibrometer. When electrical and acoustic stimuli were applied, the measured resonance frequencies were in the ranges of 663.0–2369 Hz and 659.4–2375 Hz, respectively. These results demonstrate that the mechanical frequency selectivity of this piezoelectric FABM is close to the human communication frequency range (300–3000 Hz), which is a vital feature of potential auditory prostheses. (paper)

  15. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: crupeshbarc@gmail.com [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, S.C.; Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Limaye, P.K. [Refuelling Technology Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Singh, K. [Fusion Reactor Materials Section, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2015-11-15

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias. - Highlights: • Crystalline AlN coatings obtained on stainless steel by reactive sputtering. • Wurtzite AlN formed at higher discharge power and higher substrate biasing. • Mixture of wurtzite and rock salt AlN formed at low power and low biasing. • Substrate negative biasing improved adhesion of AlN coatings. • Substrate negative biasing improved wear resistance and hardness of AlN coatings.

  16. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure.

    Science.gov (United States)

    Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Kołodziejczyk, Łukasz; Luculescu, Catalin-Romeo; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Vladescu, Alina; Stan, George E

    2017-11-17

    Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c -axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  17. Laterally vibrating resonator based elasto-optic modulation in aluminum nitride

    Directory of Open Access Journals (Sweden)

    Siddhartha Ghosh

    2016-06-01

    Full Text Available An integrated strain-based optical modulator driven by a piezoelectric laterally vibrating resonator is demonstrated. The composite structure consists of an acoustic Lamb wave resonator, in which a photonic racetrack resonator is internally embedded to enable overlap of the guided optical mode with the induced strain field. Both types of resonators are defined in an aluminum nitride (AlN thin film, which rests upon a layer of silicon dioxide in order to simultaneously define optical waveguides, and the structure is released from a silicon substrate. Lateral vibrations produced by the acoustic resonator are transferred through a partially etched layer of AlN, producing a change in the effective index of the guided wave through the interaction of the strain components with the AlN elasto-optic (p coefficients. Optical modulation through the elasto-optic effect is demonstrated at electromechanically actuated frequencies of 173 MHz and 843 MHz. This device geometry further enables the development of MEMS-based optical modulators in addition to studying elasto-optic interactions in suspended piezoelectric thin films.

  18. Exploiting elastic anharmonicity in aluminum nitride matrix for phase-synchronous frequency reference generation

    Science.gov (United States)

    Ghatge, Mayur; Tabrizian, Roozbeh

    2018-03-01

    A matrix of aluminum-nitride (AlN) waveguides is acoustically engineered to realize electrically isolated phase-synchronous frequency references through nonlinear wave-mixing. AlN rectangular waveguides are cross-coupled through a periodically perforated plate that is engineered to have a wide acoustic bandgap around a desirable frequency ( f1≈509 MHz). While the coupling plate isolates the matrix from resonant vibrations of individual waveguide constituents at f1, it is transparent to the third-order harmonic waves (3f1) that are generated through nonlinear wave-mixing. Therefore, large-signal excitation of the f1 mode in a constituent waveguide generates acoustic waves at 3f1 with an efficiency defined by elastic anharmonicity of the AlN film. The phase-synchronous propagation of the third harmonic through the matrix is amplified by a high quality-factor resonance mode at f2≈1529 MHz, which is sufficiently close to 3f1 (f2 ≅ 3f1). Such an architecture enables realization of frequency-multiplied and phase-synchronous, yet electrically and spectrally isolated, references for multi-band/carrier and spread-spectrum wireless communication systems.

  19. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  20. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  1. A novel anti-frictional multiphase layer produced by plasma nitriding of PVD titanium coated ZL205A aluminum alloy

    Science.gov (United States)

    Lu, C.; Yao, J. W.; Wang, Y. X.; Zhu, Y. D.; Guo, J. H.; Wang, Y.; Fu, H. Y.; Chen, Z. B.; Yan, M. F.

    2018-02-01

    The heat treatment (consisting of solid solution and aging), is integrated with the nitriding process of titanium coated ZL205A aluminum alloy to improve the surface and matrix mechanical properties simultaneously. Two-step duplex treatment is adopted to prepare the gradient multiphase layer on a magnesium-free ZL205A aluminum-copper based alloy. Firstly, pure titanium film is deposited on the aluminum alloy substrate using magnetron sputtering. Secondly, the Ti-coated specimen is nitrided at the solid solution temperature of the substrate alloying elements in a gas mixture of N2 and H2 and aged at 175 °C. The microstructure evolution, microhardness as well as the wear resistance of obtained multiphase layers are investigated by means of scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometer (EDS), microhardness tester and pin-on-disc tribometer. The multiphase layer, dominated by TiN0.3 or Al3Ti, is prepared with significantly increased layer depth after duplex treatment. The surface hardness of multiphase layer is remarkably improved from 23.7HV to 457HV. The core matrix hardness is also increased to 65HV after aging. The wear rate of the multiphase layer decreases about 55.22% and 49.28% in comparison with the aged and Ti coated specimens, respectively. The predominant wear mechanism for the multiphase layer is abrasive and oxidation, but severe adhesive wear for the aged and Ti coated specimens.

  2. Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method

    Science.gov (United States)

    Shigetoh, Keisuke; Horibuchi, Kayo; Nakamura, Daisuke

    2017-11-01

    Owing to the large differences in the chemical properties between Al and N polarities in aluminum nitride (AlN), the choice of the polar direction for crystal growth strongly affects not only the quality but also the shape (facet formation) of the grown crystal. In particular, N-polar (0 0 0 -1) has been considered to be a more preferable direction than Al-polar (0 0 0 1) for sublimation growth because compared to Al-polar (0 0 0 1), N-polar (0 0 0 -1) exhibits better stability at high growth rate (high supersaturation) conditions and enables easier lateral enlargement of the crystal. However, some critical growth conditions induce polarity inversion and hinder stable N-polar growth. Furthermore, the origin of the polarity inversion in AlN growth by the sublimation method is still unclear. To ensure stable N-polar growth without polarity inversion, the formation mechanism of the inversion domain during AlN sublimation growth must be elucidated. Therefore, herein, we demonstrate homoepitaxial growth on an N-polar seed and carefully investigate the obtained crystal that shows polarity inversion. Annular bright-field scanning transmission electron microscopy reveals that polarity is completely converted to the Al polarity via the formation of a 30 nm thick mixed polar layer (MPL) just above the seed. Moreover, three-dimensional atom probe tomography shows the segregation of the oxygen impurities in the MPL with a high concentration of about 3 atom%. Finally, by avoiding the incorporation of oxygen impurity into the crystal at the initial stage of the growth, we demonstrate an effective reduction (seven orders of magnitude) of the inversion domain boundary formation.

  3. The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen

    Science.gov (United States)

    Fischer, W. A.; Schuh, B.

    1978-01-01

    The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

  4. Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

    Science.gov (United States)

    Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.

    2011-06-01

    We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.

  5. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering

    International Nuclear Information System (INIS)

    Dubois, Marc-Alexandre; Muralt, Paul

    2001-01-01

    Polycrystalline aluminum nitride thin films were deposited onto platinum, aluminum, and titanium electrodes by reactive magnetron sputtering in the pulsed direct current mode. The films exhibited all a columnar microstructure and a c-axis texture. The built-in stress and the piezoelectric properties of these films were studied as a function of both the processing conditions and the electrode material. Stress was found to be very much dependent on the growth conditions, and values ranging from strong compression to high tension were observed. The piezoelectric d 33,f coefficient was shown to rely on substrate quality and ionic bombardment: The nucleation surface must be stable with regard to the nitrogen plasma and present a hexagonal symmetry and, on the other hand, enough energy must be delivered to the growing film through ionic bombardment. [copyright] 2001 American Institute of Physics

  6. Mechanical characterization of hybrid and functionally-graded aluminum open-cell foams with nanocrystalline-copper coatings

    Science.gov (United States)

    Sun, Yi

    Cellular/foam materials found in nature such as bone, wood, and bamboo are usually functionally graded by having a non-uniform density distribution and inhomogenous composition that optimizes their global mechanical performance. Inspired by such naturally engineered products, the current study was conducted towards the development of functionally graded hybrid metal foams (FGHMF) with electrodeposited (ED) nanocrystalline coatings. First, the deformation and failure mechanisms of aluminum/copper (Al/Cu) hybrid foams were investigated using finite element analyses at different scales. The micro-scale behavior was studied based on single ligament models discretized using continuum elements and the macro-scale behavior was investigated using beam-element based finite element models of representative unit volumes consisting of multiple foam cells. With a detailed constitutive material behavior and material failure considered for both the aluminum ligament and the nano-copper coating, the numerical models were able to capture the unique behavior of Al/Cu hybrid foams, such as the typically observed sudden load drop after yielding. The numerical models indicate that such load drop is caused by the fracture of foam ligaments initiated from the rupture of the ED nano-copper coating due to its low ductility. This failure mode jeopardizes the global energy absorption capacity of hybrid foams, especially when a thick coating is applied. With the purpose of enhancing the performance of Al/Cu hybrid foams, an annealing process, which increased the ductility of the nanocrystalline copper coating by causing recovery, recrystallination and grain growth, was introduced in the manufacturing of Al/Cu hybrid foams. Quasi-static experimental results indicate that when a proper amount of annealing is applied, the ductility of the ED copper can be effectively improved and the compressive and tensile behavior of Al/Cu hybrid foams can be significantly enhanced, including better energy

  7. Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

    International Nuclear Information System (INIS)

    Ding Yanfang; Zhu Ziqiang; Zhu Ming; Lin Chenglu

    2006-01-01

    Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (MN), which has a thermal conductivity that is about 200 times higher than that of SiO 2 (320 W·m -1 ·K -1 versus 1.4 W·m -1 ·K -l ). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AIN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions. (authors)

  8. Wear-triggered self-healing behavior on the surface of nanocrystalline nickel aluminum bronze/Ti3SiC2 composites

    Science.gov (United States)

    Zhai, Wenzheng; Lu, Wenlong; Zhang, Po; Wang, Jian; Liu, Xiaojun; Zhou, Liping

    2018-04-01

    Self-healing can protect materials from diverse damages, but is intrinsically difficult in metals. This paper demonstrates a potential method through a simultaneous decomposition and oxidation of Ti3SiC2 to achieve healing of stress cracking on the surface of nickel aluminum bronze (NAB)/Ti3SiC2 nanocrystalline composites during fretting wear. At the finest nanocrystalline materials, a crack recovery would be attained at 76.5%. The repetitive fretting wear leads to a modest amount of 'flowability' of Ti3SiC2 toward the crack, facilitating crack recovery. Along with the wear-triggered self-healing, the NAB/Ti3SiC2 shows an improved tribological performance with the stable decreased friction torque due to the formation of lubrication TiO2 oxide.

  9. Studies on Preparation and Characterization of Aluminum Nitride-Coated Carbon Fibers and Thermal Conductivity of Epoxy Matrix Composites

    Directory of Open Access Journals (Sweden)

    Hyeon-Hye Kim

    2017-08-01

    Full Text Available In this work; the effects of an aluminum nitride (AlN ceramic coating on the thermal conductivity of carbon fiber-reinforced composites were studied. AlN were synthesized by a wet-thermal treatment (WTT method in the presence of copper catalysts. The WTT method was carried out in a horizontal tube furnace at above 1500 °C under an ammonia (NH3 gas atmosphere balanced by a nitrogen using aluminum chloride as a precursor. Copper catalysts pre-doped enhance the interfacial bonding of the AlN with the carbon fiber surfaces. They also help to introduce AlN bonds by interrupting aluminum oxide (Al2O3 formation in combination with oxygen. Scanning electron microscopy (SEM; Transmission electron microscopy (TEM; and X-ray diffraction (XRD were used to analyze the carbon fiber surfaces and structures at each step (copper-coating step and AlN formation step. In conclusion; we have demonstrated a synthesis route for preparing an AlN coating on the carbon fiber surfaces in the presence of a metallic catalyst.

  10. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  11. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    International Nuclear Information System (INIS)

    Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

    2011-01-01

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  12. Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

    Science.gov (United States)

    Meng, Fei; Estruga, Marc; Forticaux, Audrey; Morin, Stephen A; Wu, Qiang; Hu, Zheng; Jin, Song

    2013-12-23

    Stacking faults are an important class of crystal defects commonly observed in nanostructures of close packed crystal structures. They can bridge the transition between hexagonal wurtzite (WZ) and cubic zinc blende (ZB) phases, with the most known example represented by the "nanowire (NW) twinning superlattice". Understanding the formation mechanisms of stacking faults is crucial to better control them and thus enhance the capability of tailoring physical properties of nanomaterials through defect engineering. Here we provide a different perspective to the formation of stacking faults associated with the screw dislocation-driven growth mechanism of nanomaterials. With the use of NWs of WZ aluminum nitride (AlN) grown by a high-temperature nitridation method as the model system, dislocation-driven growth was first confirmed by transmission electron microscopy (TEM). Meanwhile numerous stacking faults and associated partial dislocations were also observed and identified to be the Type I stacking faults and the Frank partial dislocations, respectively, using high-resolution TEM. In contrast, AlN NWs obtained by rapid quenching after growth displayed no stacking faults or partial dislocations; instead many of them had voids that were associated with the dislocation-driven growth. On the basis of these observations, we suggest a formation mechanism of stacking faults that originate from dislocation voids during the cooling process in the syntheses. Similar stacking fault features were also observed in other NWs with WZ structure, such as cadmium sulfide (CdS) and zinc oxide (ZnO).

  13. Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

    International Nuclear Information System (INIS)

    Shen Liru; Fu, Ricky K.Y.; Chu, Paul K.

    2004-01-01

    Aluminum nitride (AlN) is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 deg. C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas

  14. The Mechanical and Tribology Properties of Sputtered Titanium Aluminum Nitride Coating on the Tungsten Carbide Insert Tool in the Dry Turning of Tool Steel

    Directory of Open Access Journals (Sweden)

    Esmar Budi

    2015-02-01

    Full Text Available The effect of the sputtering parameters on the mechanical tribology properties of Titanium Aluminum Nitride coating on the tungsten cabide insert tool in the dry turning of tool steel has been investigated. The coating was deposited using a Direct Current magnetron sputtering system with various substrate biases (-79 to -221 V and nitrogen flow rates (30 to 72 sccm. The dry turning test was carried out on a Computer Numeric Code machine using an optimum cutting parameter setting. The results show that the lowest flank wear (~0.4 mm was achieved using a Titanium Aluminum Nitride-coated tool that was deposited at a high substrate bias (-200 V and a high nitrogen flow rate (70 sccm. The lowest flank wear was attributed to high coating hardness.

  15. Amorphous and nanocrystalline titanium nitride and carbonitride materials obtained by solution phase ammonolysis of Ti(NMe2)4

    International Nuclear Information System (INIS)

    Jackson, Andrew W.; Shebanova, Olga; Hector, Andrew L.; McMillan, Paul F.

    2006-01-01

    Solution phase reactions between tetrakisdimethylamidotitanium (Ti(NMe 2 ) 4 ) and ammonia yield precipitates with composition TiC 0.5 N 1.1 H 2.3 . Thermogravimetric analysis (TGA) indicates that decomposition of these precursor materials proceeds in two steps to yield rocksalt-structured TiN or Ti(C,N), depending upon the gas atmosphere. Heating to above 700 deg. C in NH 3 yields nearly stoichiometric TiN. However, heating in N 2 atmosphere leads to isostructural carbonitrides, approximately TiC 0.2 N 0.8 in composition. The particle sizes of these materials range between 4-12 nm. Heating to a temperature that corresponds to the intermediate plateau in the TGA curve (450 deg. C) results in a black powder that is X-ray amorphous and is electrically conducting. The bulk chemical composition of this material is found to be TiC 0.22 N 1.01 H 0.07 , or Ti 3 (C 0.17 N 0.78 H 0.05 ) 3.96 , close to Ti 3 (C,N) 4 . Previous workers have suggested that the intermediate compound was an amorphous form of Ti 3 N 4 . TEM investigation of the material indicates the presence of nanocrystalline regions x (C,N) y crystalline phases

  16. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

    2017-05-01

    Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

  17. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  18. Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Antonova, K., E-mail: krasa@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Mihailescu, I.N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Anastasescu, M.; Stroescu, H.; Gartner, M. [Institute of Physical Chemistry, “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2017-02-01

    Highlights: • Study of pulsed laser deposited AlN films at different laser pulse frequencies. • Higher laser pulse frequency promotes nanocrystallites formation at temperature 450 °C. • AFM and GIXRD detect randomly oriented wurtzite AlN structures. • Characterization of the nanocrystallites’ orientation by FTIR reflectance spectra. • Berreman effect is registered in p-polarised radiation at large incidence angles. - Abstract: Aluminum Nitride (AlN) thin films were synthesized on Si (100) wafers at 450 °C by pulsed laser deposition. A polycrystalline AlN target was multipulsed irradiated in a nitrogen ambient, at different laser pulse repetition rate. Grazing Incidence X-Ray Diffraction and Atomic Force Microscopy analyses evidenced nanocrystallites with a hexagonal lattice in the amorphous AlN matrix. The thickness and optical constants of the layers were determined by infrared spectroscopic ellipsometry. The optical properties were studied by Fourier Transform Infrared reflectance spectroscopy in polarised oblique incidence radiation. Berreman effect was observed around the longitudinal phonon modes of the crystalline AlN component. Angular dependence of the A{sub 1}LO mode frequency was analysed and connected to the orientation of the particles’ optical axis to the substrate surface normal. The role of the laser pulse frequency on the layers’ properties is discussed on this basis.

  19. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Baek, Jonghoon; Ma, James; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

    2007-01-01

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10 -2 Pa (4.5 x 10 -4 Torr) of 99.9% purity

  20. Aluminum nitride coatings using response surface methodology to optimize the thermal dissipated performance of light-emitting diode modules

    Science.gov (United States)

    Jean, Ming-Der; Lei, Peng-Da; Kong, Ling-Hua; Liu, Cheng-Wu

    2018-05-01

    This study optimizes the thermal dissipation ability of aluminum nitride (AlN) ceramics to increase the thermal performance of light-emitting diode (LED) modulus. AlN powders are deposited on heat sink as a heat interface material, using an electrostatic spraying process. The junction temperature of the heat sink is developed by response surface methodology based on Taguchi methods. In addition, the structure and properties of the AlN coating are examined using X-ray photoelectron spectroscopy (XPS). In the XPS analysis, the AlN sub-peaks are observed at 72.79 eV for Al2p and 398.88 eV for N1s, and an N1s sub-peak is assigned to N-O at 398.60eV and Al-N bonding at 395.95eV, which allows good thermal properties. The results have shown that the use of AlN ceramic material on a heat sink can enhance the thermal performance of LED modules. In addition, the percentage error between the predicted and experimental results compared the quadric model with between the linear and he interaction models was found to be within 7.89%, indicating that it was a good predictor. Accordingly, RSM can effectively enhance the thermal performance of an LED, and the beneficial heat dissipation effects for AlN are improved by electrostatic spraying.

  1. Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

    International Nuclear Information System (INIS)

    Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

    2004-01-01

    We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

  2. The characteristics and residual stress of aluminum nitride films grown by two-stage sputtering of mid-frequency power

    International Nuclear Information System (INIS)

    Lin, T.-C.; Cheng, H.-E.; Tang, S.-H.; Liu, W.-C.; Lee, Antony H.C.

    2008-01-01

    The [0 0 2] oriented aluminum nitride has a high surface acoustic wave speed and high mechanic-electron couple coefficient. It is a potential material for manufacturing piezoelectric devices in high frequency application. The AlN films deposited onto silicon substrates were fabricated by two-stage sputtering process with mid-frequency generator. The results showed that the film did not have well [0 0 2] preferred orientation at 1.0 and 1.5 kW, and exhibited a [0 0 2] preferred orientation at 2.0 kW. The adhesion was poor when the film had a high preferred orientation because the substrate was damaged by high energetic atoms bombardment. A two-stage growth method was investigated in order to get high [0 0 2] preferred orientation and good adhesion. A good performance was obtained at the first stage power of 1.5 kW and the second stage power of 2.0 kW. The film showed a tensile stress state when the film was deposited at 1.0 kW. In contrast, the stress state was changed to compressive when the films were grown at 2.0 kW. The two-stage growth could succeed not only to get a high [0 0 2] preferred orientation but also to develop a reducing global stress film

  3. Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy

    Science.gov (United States)

    Zhang, J. Y.; Xie, Y. P.; Guo, H. B.; Chen, Y. G.

    2018-05-01

    Aluminum nitride (AlN) has a polar crystal structure that is susceptible to electric dipolar interactions. The inversion domains in AlN, similar to those in GaN and other wurtzite-structure materials, decrease the energy associated with the electric dipolar interactions at the expense of inversion-domain boundaries, whose interface energy has not been quantified. We study the atomic structures of six different inversion-domain boundaries in AlN, and compare their interface energies from density functional theory calculations. The low-energy interfaces have atomic structures with similar bonding geometry as those in the bulk phase, while the high-energy interfaces contain N-N wrong bonds. We calculate the formation energy of an inversion domain using the interface energy and dipoles' electric-field energy, and find that the distribution of the inversion domains is an important parameter for the microstructures of AlN films. Using this thermodynamic model, it is possible to control the polarity and microstructure of AlN films by tuning the distribution of an inversion-domain nucleus and by selecting the low-energy synthesis methods.

  4. Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

    Science.gov (United States)

    Zhang, Wei

    In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

  5. Metal nitride coatings by physical vapor deposition (PVD) for a wear resistant aluminum extrusion die.

    Science.gov (United States)

    Lee, Su Young; Kim, Sang Ho

    2014-12-01

    The purpose of this study is to investigate the friction and wear behaviors of CrN, TiN, CrAlN, and TiAIN coated onto SKD61 for application to Al 7000 series extrusion dies. On the wear test, the experimental parameters are the load and the counter material's temperature. The results showed that the friction coefficient increased with load but decreased with the counter material's temperature, and the friction coefficients of CrN and CrAIN were lower than the friction coefficients of TiAIN and TIN, especially at a higher temperature. The wear track with different coatings identified different wear behaviors; the wear behavior of CrAIN was found to be abrasive, but the wear behavior of TiN, CrN, and TiAIN was adhesive. Therefore, CrAIN showed the least wear loss with a lower friction coefficient and less adhesion with counter materials at the highest range of wear load and temperature. This resulted in the easy formation of aluminum oxide in the wear track and less Al adhesion; moreover during the hard second phase, AIN dispersed in the film during deposition.

  6. Effects of copper and titanium on the corrosion behavior of newly fabricated nanocrystalline aluminum in natural seawater

    International Nuclear Information System (INIS)

    Sherif, El-Sayed M.; Ammar, Hany Rizk; Khalil, Khalil Abdelrazek

    2014-01-01

    Graphical abstract: - Highlights: • We fabricated nanocrystalline Al and some of its alloys by mechanical alloying method. • The corrosion behavior of the fabricated materials in natural seawater was reported. • We found that Al suffers both uniform and localized corrosion in the seawater. • The presence of Cu significantly decreased the corrosion of Al. • The addition of Ti to the Al–Cu alloy presented more protection to Al against corrosion. - Abstract: Fabrication of a newly nanocrystalline Al and two of its alloys, namely Al–10%Cu; and Al–10%Cu–5%Ti has been carried out using mechanical alloying (MA) technique. The corrosion behavior of these materials in aerated stagnant Arabian Gulf seawater (AGSW) at room temperature has been reported. Cyclic potentiodynamic polarization (CPP), chronoamperometric current-time (CCT) and electrochemical impedance spectroscopy (EIS) measurements along with scanning electron microscopy (SEM) and X-ray energy dispersive (EDX) investigations were employed to report the corrosion behavior of the fabricated materials. All results indicated that Al suffers both uniform and localized corrosion in the AGSW test solution. The presence of 10%Cu decreases the corrosion current density, the anodic and cathodic currents and corrosion rate and increases the corrosion resistance of Al. The addition of 5%Ti to the Al–10%Cu alloy produced further decreases in the corrosion parameters. Measurements together confirmed that the corrosion of the fabricated materials in AGSW decreases in the order Al > Al–10%Cu > Al–10%Cu–5%Ti

  7. Effects of copper and titanium on the corrosion behavior of newly fabricated nanocrystalline aluminum in natural seawater

    Energy Technology Data Exchange (ETDEWEB)

    Sherif, El-Sayed M., E-mail: esherif@ksu.edu.sa [Mechanical Engineering Department, College of Engineering, King Saud University, P.O. Box 800, Al-Riyadh 11421 (Saudi Arabia); Electrochemistry and Corrosion Laboratory, Department of Physical Chemistry, National Research Centre , (NRC), Dokki, 12622, Cairo 8 (Egypt); Ammar, Hany Rizk [Metallurgical and Materials Engineering Department, Faculty of Petroleum and Mining Engineering, Suez University, Suez (Egypt); Khalil, Khalil Abdelrazek [Metallurgical and Materials Engineering Department, Faculty of Petroleum and Mining Engineering, Suez University, Suez (Egypt); Mechanical Design and Materials Department, Faculty of Energy Engineering, Aswan University, Aswan (Egypt)

    2014-05-01

    Graphical abstract: - Highlights: • We fabricated nanocrystalline Al and some of its alloys by mechanical alloying method. • The corrosion behavior of the fabricated materials in natural seawater was reported. • We found that Al suffers both uniform and localized corrosion in the seawater. • The presence of Cu significantly decreased the corrosion of Al. • The addition of Ti to the Al–Cu alloy presented more protection to Al against corrosion. - Abstract: Fabrication of a newly nanocrystalline Al and two of its alloys, namely Al–10%Cu; and Al–10%Cu–5%Ti has been carried out using mechanical alloying (MA) technique. The corrosion behavior of these materials in aerated stagnant Arabian Gulf seawater (AGSW) at room temperature has been reported. Cyclic potentiodynamic polarization (CPP), chronoamperometric current-time (CCT) and electrochemical impedance spectroscopy (EIS) measurements along with scanning electron microscopy (SEM) and X-ray energy dispersive (EDX) investigations were employed to report the corrosion behavior of the fabricated materials. All results indicated that Al suffers both uniform and localized corrosion in the AGSW test solution. The presence of 10%Cu decreases the corrosion current density, the anodic and cathodic currents and corrosion rate and increases the corrosion resistance of Al. The addition of 5%Ti to the Al–10%Cu alloy produced further decreases in the corrosion parameters. Measurements together confirmed that the corrosion of the fabricated materials in AGSW decreases in the order Al > Al–10%Cu > Al–10%Cu–5%Ti.

  8. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  9. Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2009-07-31

    We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

  10. Enhanced field emission from Si doped nanocrystalline AlN thin films

    International Nuclear Information System (INIS)

    Thapa, R.; Saha, B.; Chattopadhyay, K.K.

    2009-01-01

    Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

  11. Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

    Science.gov (United States)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2018-03-01

    Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

  12. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  13. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

    Directory of Open Access Journals (Sweden)

    Chengkun Ma

    2017-11-01

    Full Text Available Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al2O3, etc. and cured at room temperature (RT. Then, nano-aluminum nitride (nano-AlN, nano-Cupric oxide (nano-CuO, and nano-titanium oxide (nano-TiO2 were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO4(11-0500 to the more stable AlPO4(10-0423 structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al3+.

  14. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature.

    Science.gov (United States)

    Ma, Chengkun; Chen, Hailong; Wang, Chao; Zhang, Jifeng; Qi, Hui; Zhou, Limin

    2017-11-03

    Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al₂O₃), etc. and cured at room temperature (RT). Then, nano-aluminum nitride (nano-AlN), nano-Cupric oxide (nano-CuO), and nano-titanium oxide (nano-TiO₂) were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO₄(11-0500) to the more stable AlPO₄(10-0423) structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al 3+ .

  15. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    Science.gov (United States)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  16. Atomistic study on the interaction of nitrogen and Mg lattice and the nitride formation in nanocrystalline Mg alloys synthesized using cryomilling process

    International Nuclear Information System (INIS)

    Nezafati, Marjan; Giri, Anit; Hofmeister, Clara; Cho, Kyu; Schneider, Matthew M.; Zhou, Le; Sohn, Yongho; Kim, Chang-Soo

    2016-01-01

    Cryomilling is a broadly applied technique to synthesize nanostructured alloys and composites through powder metallurgy (PM) processing. Understanding the interactions between liquid nitrogen and the nanostructured metal powder is important as it can potentially impact the mechanical performance of these materials. In this study, we performed a series of ab initio density functional theory (DFT) computations to examine the interactions of liquid nitrogen and Mg-based matrices and the formation of Mg-nitrides. The diffusion energy barriers of nitrogen in the Mg and/or Mg-Al alloys were systematically quantified by calculating the transition state (TS) for the displacement of nitrogen between two neighboring equivalent positions. The TS calculation results indicate that diffusion of N atoms is much easier than that of N 2  molecule in the Mg matrix. It is predicted that at least ∼0.4 eV is required to overcome the diffusion energy barrier in the Mg matrix. We also quantified the formation energy of Mg nitride in the matrix. The presence of Mg nitride was demonstrated experimentally using transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). In conjunction with the DFT computations and TEM/EELS analysis, we performed analytical calculations for the strain energy introduced during cryomilling to examine the impacts of processing parameters.

  17. Aluminum powder size and microstructure effects on properties of boron nitride reinforced aluminum matrix composites fabricated by semi-solid powder metallurgy

    International Nuclear Information System (INIS)

    Chen, Cunguang; Guo, Leichen; Luo, Ji; Hao, Junjie; Guo, Zhimeng; Volinsky, Alex A.

    2015-01-01

    Al matrix composite reinforced by hexagonal boron nitride (h-BN) with nearly full densification was successfully fabricated by the semi-solid powder metallurgy technique. The h-BN/Al composites were synthesized with elemental pure Al powder size of d_5_0=35, 12 and 2 μm. The powder morphology and the structural characteristics of the composites were analyzed using X-ray diffraction, scanning and transmission electron microscopy. The density, Brinell hardness and compressive behavior of the samples were characterized. Density measurement of the Al composites revealed that the composite densification can be effectively promoted by plenty of embedded liquid phase under pressure. Composites prepared using Al powder with varying granularity showed different grain characteristics, and in situ recrystallization occurred inside the original grains with 35 μm Al powder. A sharp interface consisting of Al/Al_2O_3/h-BN was present in the composites. Both the compressive strength and the fracture strain of the investigated composites increased with the decrease of the Al powder size, along with the Brinell hardness. The composite with 2 μm Al powder exhibited the highest relative density (99.3%), Brinell harness (HB 128), compressive strength (763 MPa) and fracture strain (0.299).

  18. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

    2016-06-06

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  19. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  20. Nanocrystalline solids

    International Nuclear Information System (INIS)

    Gleiter, H.

    1991-01-01

    Nanocrystalline solids are polycrystals, the crystal size of which is a few (typically 1 to 10) nanometres so that 50% or more of the solid consists of incoherent interfaces between crystals of different orientations. Solids consisting primarily of internal interfaces represent a separate class of atomic structures because the atomic arrangement formed in the core of an interface is known to be an arrangement of minimum energy in the potential field of the two adjacent crystal lattices with different crystallographic orientations on either side of the boundary core. These boundary conditions result in atomic structures in the interfacial cores which cannot be formed elsewhere (e.g. in glasses or perfect crystals). Nanocrystalline solids are of interest for the following four reasons: (1) Nanocrystalline solids exhibit an atomic structure which differs from that of the two known solid states: the crystalline (with long-range order) and the glassy (with short-range order). (2) The properties of nanocrystalline solids differ (in some cases by several orders of magnitude) from those of glasses and/or crystals with the same chemical composition, which suggests that they may be utilized technologically in the future. (3) Nanocrystalline solids seem to permit the alloying of conventionally immiscible components. (4) If small (1 to 10 nm diameter) solid droplets with a glassy structure are consolidated (instead of small crystals), a new type of glass, called nanoglass, is obtained. Such glasses seem to differ structurally from conventional glasses. (orig.)

  1. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  2. Co-current Doping Effect of Nanoscale Carbon and Aluminum Nitride on Critical Current Density and Flux Pinning Properties of Bulk MgB2 Superconductors

    Science.gov (United States)

    Tripathi, D.; Dey, T. K.

    2018-05-01

    The effect of nanoscale aluminum nitride (n-AlN) and carbon (n-C) co-doping on superconducting properties of polycrystalline bulk MgB2 superconductor has been investigated. Polycrystalline pellets of MgB2, MgB2 + 0.5 wt% AlN (nano), MgB_{1.99}C_{0.01} and MgB_{1.99}C_{0.01} + 0.5 wt% AlN (nano) have been synthesized by a solid reaction process under inert atmosphere. The transition temperature (TC) estimated from resistivity measurement indicates only a small decrease for C (nano) and co-doped MgB2 samples. The magnetic field response of investigated samples has been measured at 4, 10, and 20 K in the field range ± 6 T. MgB2 pellets co-doped with 0.5 wt% n-AlN and 1 wt% n-C display appreciable enhancement in critical current density (J_C) of MgB2 in both low (≥ 3 times), as well as, high-field region (≥ 15 times). J_C versus H behavior of both pristine and doped MgB2 pellets is well explained in the light of the collective pinning model. Further, the normalized pinning force density f_p(= F_p/F_{pmax}) displays a fair correspondence with the scaling procedure proposed by Eisterer et al. Moreover, the scaled data of the pinning force density (i.e., f_p{-}h data) of the investigated pellets at different temperature are well interpreted by a modified Dew-Hughes expression reported by Sandu and Chee.

  3. Characterization of polymethyl methacrylate/polyethylene glycol/aluminum nitride composite as form-stable phase change material prepared by in situ polymerization method

    International Nuclear Information System (INIS)

    Zhang, Lei; Zhu, Jiaoqun; Zhou, Weibin; Wang, Jun; Wang, Yan

    2011-01-01

    Highlights: → Form-stable PMMA/PEG/AlN PCMs were prepared by in situ polymerization method. → AlN additive effectively enhanced the heat transfer property of composite PCMs. → The composites exhibited desirable thermal performance and electric insulativity. → The composites were available for the thermal management of electronic device. - Abstract: This work was focused on the preparation and characterization of a new type of form-stable phase change material (PCM) employed in thermal management. Using the method of in situ polymerization, polyethylene glycol (PEG) acting as the PCM and aluminum nitride (AlN) serving as the thermal conductivity promoter were uniformly encapsulated and embedded inside the three-dimensional network structure of PMMA matrix. When the mass fraction of PEG was below 70%, the prepared composite PCMs remained solid without leakage above the melting point of the PEG. XRD and FT-IR results indicated that the PEG was physically combined with PMMA matrix and AlN additive and did not participate in the polymerization. Thermal analysis results showed that the prepared composite PCMs possess available latent heat capacity and thermal stability, and the AlN additive was able to effectively enhance the heat transfer property of organic PCM. Moreover, the volume resistivity of composite achieved (5.92 ± 0.16) x 10 10 Ω cm when the mass ratio of AlN was 30%. To sum up, the prepared form-stable PCMs were competent for the thermal management of electronic device due to their acceptable thermal performance and electric insulativity.

  4. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    Science.gov (United States)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  5. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

    Science.gov (United States)

    Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P; Pearton, Stephen J

    2010-01-01

    Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the

  6. Enhanced performance of a quasi-solid-state dye-sensitized solar cell with aluminum nitride in its gel polymer electrolyte

    KAUST Repository

    Huang, Kuan-Chieh

    2011-08-01

    The effects of incorporation of aluminum nitride (AlN) in the gel polymer electrolyte (GPE) of a quasi-solid-state dye-sensitized solar cell (DSSC) were studied in terms of performance of the cell. The electrolyte, consisting of lithium iodide (LiI), iodine (I2), and 4-tert-butylpyridine (TBP) in 3-methoxypropionitrile (MPN), was solidified with poly(vinyidene fluoride-co-hexafluoro propylene) (PVDF-HFP). The 0.05, 0.1, 0.3, and 0.5 wt% of AlN were added to the electrolyte for this study. XRD analysis showed a reduction of crystallinity in the polymer PVDF-HFP for all the additions of AlN. The DSSC fabricated with a GPE containing 0.1 wt% AlN showed a short-circuit current density (JSC) and power-conversion efficiency (η) of 12.92±0.54 mA/cm2 and 5.27±0.23%, respectively, at 100 mW/cm2 illumination, in contrast to the corresponding values of 11.52±0.21 mA/cm2 and 4.75±0.08% for a cell without AlN. The increases both in JSC and in η of the promoted DSSC are attributed to the higher apparent diffusion coefficient of I- in its electrolyte (3.52×10-6 cm2/s), compared to that in the electrolyte without AlN of a DSSC (2.97×10-6 cm 2/s). At-rest stability of the quasi-solid-state DSSC with 0.1 wt% of AlN was found to decrease hardly by 5% and 7% at room temperature and at 40 °C, respectively, after 1000 h duration. The DSSC with a liquid electrolyte showed a decrease of about 40% at room temperature, while it virtually lost its performance in about 150 h at 40 °C. Explanations are further substantiated by means of electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and by porosity measurements. © 2010 Elsevier B.V.

  7. Nanocrystalline Ni-Co Alloy Synthesis by High Speed Electrodeposition

    OpenAIRE

    Idris, Jamaliah; Christian, Chukwuekezie; Gaius, Eyu

    2013-01-01

    Electrodeposition of nanocrystals is economically and technologically viable production path for the synthesis of pure metals and alloys both in coatings and bulk form. The study presents nanocrystalline Ni-Co alloy synthesis by high speed electrodeposition. Nanocrystalline Ni-Co alloys coatings were prepared by direct current (DC) and deposited directly on steel and aluminum substrates without any pretreatment, using high speed electrodeposition method. The influence of the electrolysis par...

  8. Nanocrystalline ceramic materials

    Science.gov (United States)

    Siegel, Richard W.; Nieman, G. William; Weertman, Julia R.

    1994-01-01

    A method for preparing a treated nanocrystalline metallic material. The method of preparation includes providing a starting nanocrystalline metallic material with a grain size less than about 35 nm, compacting the starting nanocrystalline metallic material in an inert atmosphere and annealing the compacted metallic material at a temperature less than about one-half the melting point of the metallic material.

  9. Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

    Science.gov (United States)

    Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

    2018-05-01

    Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

  10. Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

    Science.gov (United States)

    Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

    2012-06-01

    Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

  11. Preparation and characteristics of various rare earth nitrides

    International Nuclear Information System (INIS)

    Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

    2008-01-01

    Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

  12. Boron-doped nanocrystalline diamond electrodes for neural interfaces: in vivo biocompatibility evaluation

    Czech Academy of Sciences Publication Activity Database

    Alcaide, M.; Taylor, Andrew; Fjorback, M.; Zachar, V.; Pennisi, C.P.

    2016-01-01

    Roč. 10, Mar (2016), 1-9, č. článku 87. ISSN 1662-453X Institutional support: RVO:68378271 Keywords : nanocrystalline diamond * neuroprosthetic interfaces * neural electrodes * boron-doped diamond * titanium nitride * foreign body reaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.566, year: 2016

  13. Thermally Stable Nanocrystalline Steel

    Science.gov (United States)

    Hulme-Smith, Christopher Neil; Ooi, Shgh Woei; Bhadeshia, Harshad K. D. H.

    2017-10-01

    Two novel nanocrystalline steels were designed to withstand elevated temperatures without catastrophic microstructural changes. In the most successful alloy, a large quantity of nickel was added to stabilize austenite and allow a reduction in the carbon content. A 50 kg cast of the novel alloy was produced and used to verify the formation of nanocrystalline bainite. Synchrotron X-ray diffractometry using in situ heating showed that austenite was able to survive more than 1 hour at 773 K (500 °C) and subsequent cooling to ambient temperature. This is the first reported nanocrystalline steel with high-temperature capability.

  14. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  15. Radiation damage in heavy irradiated aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru [Naruto Univ. of education, Tokushima (Japan); Okada, Moritami; Nakagawa, Masuo

    1996-04-01

    AlN, one of candidate for ceramic materials used in nuclear fusion reactor, was irradiated by fast and thermal neutrons. The high concentration of irradiated defects and the nuclear transformation elements were detected by electron spin resonance (ESR) and x-ray photoelectron spectroscopy (XPS) method. The exposure of fast neutron and thermal neutron were 1.2x10{sup 20}n/cm{sup 2} and 1.2x10{sup 21}n/cm{sup 2}, respectively. The spreads of ESR spectra of ultra hyperfine structure depending on interaction between {sup 27}Al nuclear spin and electron trapped in tetrahedron consisted of Al atoms was found in the spectra of heavy irradiated AlN. F type defects was estimated 10{sup 19}n/cm{sup 3}. Photoelectrons from 2s and 2p in {sup 28}Si which produced in process of {beta}-decay of {sup 27}Al(n,{gamma}){sup 28}Al were observed in XPS spectra of irradiated samples. (S.Y.)

  16. Radiation damage in heavy irradiated aluminum nitride

    International Nuclear Information System (INIS)

    Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru; Okada, Moritami; Nakagawa, Masuo.

    1996-01-01

    AlN, one of candidate for ceramic materials used in nuclear fusion reactor, was irradiated by fast and thermal neutrons. The high concentration of irradiated defects and the nuclear transformation elements were detected by electron spin resonance (ESR) and x-ray photoelectron spectroscopy (XPS) method. The exposure of fast neutron and thermal neutron were 1.2x10 20 n/cm 2 and 1.2x10 21 n/cm 2 , respectively. The spreads of ESR spectra of ultra hyperfine structure depending on interaction between 27 Al nuclear spin and electron trapped in tetrahedron consisted of Al atoms was found in the spectra of heavy irradiated AlN. F type defects was estimated 10 19 n/cm 3 . Photoelectrons from 2s and 2p in 28 Si which produced in process of β-decay of 27 Al(n,γ) 28 Al were observed in XPS spectra of irradiated samples. (S.Y.)

  17. Micro-Scale Gallium Nitride Pressure Sensors for Advanced Harsh Environment Space Technology

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of this research is to study the high-temperature response of the 2-dimesional electron gas (2DEG) that occurs at the interface of aluminum gallium nitride...

  18. Hot pressing of nanocrystalline tantalum using high frequency induction heating and pulse plasma sintering

    Science.gov (United States)

    Jakubowicz, J.; Adamek, G.; Sopata, M.; Koper, J. K.; Siwak, P.

    2017-12-01

    The paper presents the results of nanocrystalline powder tantalum consolidation using hot pressing. The authors used two different heating techniques during hot pressing: high-frequency induction heating (HFIH) and pulse plasma sintering (PPS). A comparison of the structure, microstructure, mechanical properties and corrosion resistance of the bulk nanocrystalline tantalum obtained in both techniques was performed. The nanocrystalline powder was made to start from the microcrystalline one using the high-energy ball milling process. The nanocrystalline powder was hot-pressed at 1000 °C, whereas, for comparison, the microcrystalline powder was hot pressed up to 1500 °C for proper consolidation. The authors found that during hot pressing, the powder partially reacts with the graphite die covered by boron nitride, which facilitated punches and powder displacement in the die during densification. Tantalum carbide and boride in the nanocrystalline material was found, which can improve the mechanical properties. The hardness of the HFIH and PPS nanocrystalline tantalum was as high as 625 and 615 HV, respectively. The microstructure was more uniform in the PPS nanomaterial. The corrosion resistance in both cases deteriorated, in comparison to the microcrystalline material, while the PPS material corrosion resistance was slightly better than that of the HFIH one.

  19. Nanopillar arrays of amorphous carbon nitride

    Science.gov (United States)

    Sai Krishna, Katla; Pavan Kumar, B. V. V. S.; Eswaramoorthy, Muthusamy

    2011-07-01

    Nanopillar arrays of amorphous carbon nitride have been prepared using anodic aluminum oxide (AAO) membrane as a template. The amine groups present on the surface of these nanopillars were exploited for functionalization with oleic acid in order to stabilize the nanostructure at the aqueous-organic interface and also for the immobilization of metal nanoparticles and protein. These immobilised nanoparticles were found to have good catalytic activity.

  20. Method of forming aluminum oxynitride material and bodies formed by such methods

    Science.gov (United States)

    Bakas, Michael P [Ammon, ID; Lillo, Thomas M [Idaho Falls, ID; Chu, Henry S [Idaho Falls, ID

    2010-11-16

    Methods of forming aluminum oxynitride (AlON) materials include sintering green bodies comprising aluminum orthophosphate or another sacrificial material therein. Such green bodies may comprise aluminum, oxygen, and nitrogen in addition to the aluminum orthophosphate. For example, the green bodies may include a mixture of aluminum oxide, aluminum nitride, and aluminum orthophosphate or another sacrificial material. Additional methods of forming aluminum oxynitride (AlON) materials include sintering a green body including a sacrificial material therein, using the sacrificial material to form pores in the green body during sintering, and infiltrating the pores formed in the green body with a liquid infiltrant during sintering. Bodies are formed using such methods.

  1. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  2. Nanocrystalline Porous Hydrogen Storage Based on Vanadium and Titanium Nitrides

    Directory of Open Access Journals (Sweden)

    A. Goncharov

    2017-01-01

    Full Text Available This review summarizes results of our study of the application of ion-beam assisted deposition (IBAD technology for creation of nanoporous thin-film structures that can absorb more than 6 wt.% of hydrogen. Data of mathematical modeling are presented highlighting the structure formation and component creation of the films during their deposition at the time of simultaneous bombardment by mixed beam of nitrogen and helium ions with energy of 30 keV. Results of high-resolution transmission electron microscopy revealed that VNx films consist of 150–200 nm particles, boundaries of which contain nanopores of 10–15 nm diameters. Particles themselves consist of randomly oriented 10–20 nm nanograins. Grain boundaries also contain nanopores (3–8 nm. Examination of the absorption characteristics of VNx, TiNx, and (V,TiNx films showed that the amount of absorbed hydrogen depends very little on the chemical composition of films, but it is determined by the structure pore. The amount of absorbed hydrogen at 0.3 MPa and 20°C is 6-7 wt.%, whereas the bulk of hydrogen is accumulated in the grain boundaries and pores. Films begin to release hydrogen even at 50°C, and it is desorbed completely at the temperature range of 50–250°C. It was found that the electrical resistance of films during the hydrogen desorption increases 104 times.

  3. Investigating Tribological Characteristics of HVOF Sprayed AISI 316 Stainless Steel Coating by Pulsed Plasma Nitriding

    Science.gov (United States)

    Mindivan, H.

    2018-01-01

    In this study, surface modification of aluminum alloy using High-Velocity Oxygen Fuel (HVOF) thermal spray and pulsed plasma nitriding processes was investigated. AISI 316 stainless steel coating on 1050 aluminum alloy substrate by HVOF process was pulsed plasma nitrided at 793 K under 0.00025 MPa pressure for 43200 s in a gas mixture of 75 % N2 and 25 % H2. The results showed that the pulse plasma nitriding process produced a surface layer with CrN, iron nitrides (Fe3N, Fe4N) and expanded austenite (γN). The pulsed plasma nitrided HVOF-sprayed coating showed higher surface hardness, lower wear rate and coefficient of friction than the untreated HVOF-sprayed one.

  4. Nanocrystalline Ni-Co Alloy Synthesis by High Speed Electrodeposition

    Directory of Open Access Journals (Sweden)

    Jamaliah Idris

    2013-01-01

    Full Text Available Electrodeposition of nanocrystals is economically and technologically viable production path for the synthesis of pure metals and alloys both in coatings and bulk form. The study presents nanocrystalline Ni-Co alloy synthesis by high speed electrodeposition. Nanocrystalline Ni-Co alloys coatings were prepared by direct current (DC and deposited directly on steel and aluminum substrates without any pretreatment, using high speed electrodeposition method. The influence of the electrolysis parameters, such as cathodic current density and temperature at constant pH, on electrodeposition and microstructure of Ni-Co alloys were examined. A homogeneous surface morphology was obtained at all current densities of the plated samples, and it was evident that the current density and temperature affect the coating thickness of Ni-Co alloy coatings.

  5. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    Energy Technology Data Exchange (ETDEWEB)

    R. Suplinskas G. DiBona; W. Grant

    2001-10-29

    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  6. Aluminum Hydroxide

    Science.gov (United States)

    Aluminum hydroxide is used for the relief of heartburn, sour stomach, and peptic ulcer pain and to ... Aluminum hydroxide comes as a capsule, a tablet, and an oral liquid and suspension. The dose and ...

  7. Synthesis of nanocrystalline fluorinated hydroxyapatite

    Indian Academy of Sciences (India)

    Fluorinated hydroxyapatite; nanocrystalline; microwave synthesis; dissolution. ... HA by the presence of other ions such as carbonate, magnesium, fluoride, etc. ... Fourier transform infrared spectroscopy (FT–IR) and laser Raman spectroscopy.

  8. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  9. Degradation of nitride coatings in low-pressure gas discharge plasma

    Science.gov (United States)

    Ivanov, Yurii; Shugurov, Vladimir; Krysina, Olga; Petrikova, Elizaveta; Tolkachev, Oleg

    2017-12-01

    The paper provides research data on the defect structure, mechanical characteristics, and tribological properties of commercially pure VT1-0 titanium exposed to surface modification on a COMPLEX laboratory electron-ion plasma setup which allows nitriding, coating deposition, and etching in low-pressure gas discharge plasma in a single vacuum cycle. It is shown that preliminary plasma nitriding forms a columnar Ti2N phase in VT1-0 titanium and that subsequent TiN deposition results in a thin nanocrystalline TiN layer. When the coating-substrate system is etched, the coating fails and the tribological properties of the material degrade greatly.

  10. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  11. Electrochemical properties of lanthanum nitride with calcium nitride additions

    International Nuclear Information System (INIS)

    Lesunova, R.P.; Fishman, L.S.

    1986-01-01

    This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

  12. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  13. Radiation stability of nanocrystalline ZrN coatings irradiated with high energy Xe and Bi ions

    International Nuclear Information System (INIS)

    Skuratov, V.A.; Sokhatsky, A.S.; Uglov, V.V.; Zlotski, S.V.; Van Vuuren, A.J.; Neethling, Jan; O'Connell, J.

    2011-01-01

    Swift Xe and Bi ion irradiation effects in nanocrystalline ZrN coatings as a function of ion fluence are reported. Zirconium nitride films of different thickness (0.1, 3, 10 and 20 micrometers) synthesized by vacuum arc-vapour deposition in nanocrystalline state (average size of crystallites is ∼4 nm) were irradiated with 167 MeV Xe and 695 MeV Bi ions to fluences in the range 3x10 12 ÷2.6x10 15 cm -2 (Xe) and 10 12 x10 13 cm -2 (Bi) and studied using XRD and TEM techniques. No evidence of amorphization due to high level ionizing energy losses has been found. The measurements of lattice parameter have revealed nonmonotonic dependence of the stress level in irradiated samples on ion fluence. (authors)

  14. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    International Nuclear Information System (INIS)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  15. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  16. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  17. Nanocrystalline diamond films for biomedical applications

    DEFF Research Database (Denmark)

    Pennisi, Cristian Pablo; Alcaide, Maria

    2014-01-01

    Nanocrystalline diamond films, which comprise the so called nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD), represent a class of biomaterials possessing outstanding mechanical, tribological, and electrical properties, which include high surface smoothness, high corrosion...... performance of nanocrystalline diamond films is reviewed from an application-specific perspective, covering topics such as enhancement of cellular adhesion, anti-fouling coatings, non-thrombogenic surfaces, micropatterning of cells and proteins, and immobilization of biomolecules for bioassays. In order...

  18. Strength and structure of nanocrystalline titanium

    International Nuclear Information System (INIS)

    Noskova, N.I.; Pereturina, I.A.; Elkina, O.A.; Stolyarov, V.V.

    2004-01-01

    Investigation results on strength and plasticity of nanocrystalline titanium VT-1 are presented. Specific features of plastic deformation on tension of this material specimens in an electron microscope column are studied in situ. It is shown that nanocrystalline titanium strength and plasticity at room temperature are dependent on the structure and nanograin size. It is revealed that deformation processes in nanocrystalline titanium are characterized by activation of deformation rotational modes and microtwinning [ru

  19. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

  20. CHARACTERIZATION OF NEW TOOL STEEL FOR ALUMINUM EXTRUSION DIES

    Directory of Open Access Journals (Sweden)

    José Britti Bacalhau

    2014-06-01

    Full Text Available Aluminum extrusion dies are an important segment of application on industrial tools steels, which are manufactured in steels based on AISI H13 steel. The main properties of steels applied to extrusion dies are: wear resistance, impact resistance and tempering resistance. The present work discusses the characteristics of a newly developed hot work steel to be used on aluminum extrusion dies. The effects of Cr and Mo contents with respect to tempering resistance and the Al addition on the nitriding response have been evaluated. From forged steel bars, Charpy impact test and characterization via EPMA have been conducted. The proposed contents of Cr, Mo, and Al have attributed to the new VEX grade a much better tempering resistance than H13, as well as a deeper and harder nitrided layer. Due to the unique characteristics, this new steel provides an interesting alternative to the aluminum extrusion companies to increase their competitiveness.

  1. Nanocrystalline diamond coatings for machining

    Energy Technology Data Exchange (ETDEWEB)

    Frank, M.; Breidt, D.; Cremer, R. [CemeCon AG, Wuerselen (Germany)

    2007-07-01

    This history of CVD diamond synthesis goes back to the fifties of the last century. However, the scientific and economical potential was only gradually recognized. In the eighties, intensive worldwide research on CVD diamond synthesis and applications was launched. Industrial products, especially diamond-coated cutting tools, were introduced to the market in the middle of the nineties. This article shows the latest developments in this area, which comprises nanocrystalline diamond coating structures. (orig.)

  2. FIB and TEM studies of damage mechanisms in DLC coatings sliding against aluminum

    International Nuclear Information System (INIS)

    Meng-Burany, X.; Alpas, A.T.

    2007-01-01

    Material transfer and adhesion phenomena during sliding contact of non-hydrogenated diamond like carbon (DLC) coatings against an aluminum-silicon (319 Al) counterface tested in vacuum were studied using TEM investigations of the cross-sectional microstructures of the wear tracks. Site-specific focused ion beam (FIB) lift-out method was used to prepare the sections at the precise locations where aluminum pieces were adhered to the DLC surface. The dense amorphous structure of DLC coatings with nanocrystalline graphite platelets is confirmed by the high-resolution transmission electron microscopy. The focused ion channeling contrast images obtained from the cross-sections of the wear track indicated that in some sections of DLC coatings considerable wear was inflicted by aluminum, reducing the coating thickness. The aluminum that was transferred on the DLC coatings' contact surfaces consisted of nanocrystalline grains of less than 100 nm. TEM examination of the contact surface of the 319 Al pin has revealed that the initial aluminum grain size was also reduced to the nanocrystalline scale and this was accompanied with a hardness increase. These observations revealed that local severe plastic deformation accompanied the aluminum adhesion process to DLC coating surfaces

  3. Nanocrystalline functional materials and nanocomposites synthesis through aerosol routes

    Directory of Open Access Journals (Sweden)

    Milošević Olivera B.

    2003-01-01

    Full Text Available This paper represents the results of the design of functional nanocrystalline powders and nanocomposites using chemical reactions in aerosols. The process involves ultrasonic aerosol formation (mist generators with the resonant frequencies of 800 kHz, 1.7 and 2.5 MHz from precursor salt solutions and control over the aerosol decomposition in a high-temperature tubular flow reactor. During decomposition, the aerosol droplets undergo evaporation/drying, precipitation and thermolysis in a single-step process. Consequently, spherical, solid, agglomerate-free submicronic particles are obtained. The particle morphology, revealed as a composite structure consisting of primary crystallites smaller than 20 nm was analysed by several methods (XRD, DSC/DTA, SEM, TEM and discussed in terms of precursor chemistry and process parameters. Following the initial attempts, a more detailed aspect of nanocrystalline particle synthesis was demonstrated for the case of nanocomposites based on ZnO-MeO (MeO=Bi Cr+, suitable for electronic applications, as well as an yttrium-aluminum base complex system, suitable for phosphorus applications. The results imply that parts of the material structure responsible for different functional behaviour appear through in situ aerosol synthesis by processes of intraparticle agglomeration, reaction and sintering in the last synthesis stage.

  4. Multimillion atom simulations of dynamics of oxidation of an aluminum nanoparticle and nanoindentation on ceramics.

    Science.gov (United States)

    Vashishta, Priya; Kalia, Rajiv K; Nakano, Aiichiro

    2006-03-02

    We have developed a first-principles-based hierarchical simulation framework, which seamlessly integrates (1) a quantum mechanical description based on the density functional theory (DFT), (2) multilevel molecular dynamics (MD) simulations based on a reactive force field (ReaxFF) that describes chemical reactions and polarization, a nonreactive force field that employs dynamic atomic charges, and an effective force field (EFF), and (3) an atomistically informed continuum model to reach macroscopic length scales. For scalable hierarchical simulations, we have developed parallel linear-scaling algorithms for (1) DFT calculation based on a divide-and-conquer algorithm on adaptive multigrids, (2) chemically reactive MD based on a fast ReaxFF (F-ReaxFF) algorithm, and (3) EFF-MD based on a space-time multiresolution MD (MRMD) algorithm. On 1920 Intel Itanium2 processors, we have demonstrated 1.4 million atom (0.12 trillion grid points) DFT, 0.56 billion atom F-ReaxFF, and 18.9 billion atom MRMD calculations, with parallel efficiency as high as 0.953. Through the use of these algorithms, multimillion atom MD simulations have been performed to study the oxidation of an aluminum nanoparticle. Structural and dynamic correlations in the oxide region are calculated as well as the evolution of charges, surface oxide thickness, diffusivities of atoms, and local stresses. In the microcanonical ensemble, the oxidizing reaction becomes explosive in both molecular and atomic oxygen environments, due to the enormous energy release associated with Al-O bonding. In the canonical ensemble, an amorphous oxide layer of a thickness of approximately 40 angstroms is formed after 466 ps, in good agreement with experiments. Simulations have been performed to study nanoindentation on crystalline, amorphous, and nanocrystalline silicon nitride and silicon carbide. Simulation on nanocrystalline silicon carbide reveals unusual deformation mechanisms in brittle nanophase materials, due to

  5. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  6. Structure and thermal stability of nanocrystalline materials

    Indian Academy of Sciences (India)

    In addition, study of the thermal stability of nanocrystalline materials against significant grain growth is both scientific and technological interest. A sharp increase in grain size (to micron levels) during consolidation of nanocrystalline powders to obtain fully dense materials may consequently result in the loss of some unique ...

  7. The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

    Energy Technology Data Exchange (ETDEWEB)

    Li Yang [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Wang Liang, E-mail: wlimt@yahoo.com [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Zhang Dandan; Shen Lie [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China)

    2010-11-15

    A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH{sub 3} gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 {mu}m thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

  8. The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

    International Nuclear Information System (INIS)

    Li Yang; Wang Liang; Zhang Dandan; Shen Lie

    2010-01-01

    A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

  9. The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

    Science.gov (United States)

    Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

    2010-11-01

    A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.

  10. Scratch-resistant transparent boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Dekempeneer, E.H.A.; Kuypers, S.; Vercammen, K.; Meneve, J.; Smeets, J. [Vlaamse Instelling voor Technologisch Onderzoek (VITO), Mol (Belgium); Gibson, P.N.; Gissler, W. [Joint Research Centre of the Commission of the European Communities, Institute for Advanced Materials, Ispra (Vatican City State, Holy See) (Italy)

    1998-03-01

    Transparent boron nitride (BN) coatings were deposited on glass and Si substrates in a conventional capacitively coupled RF PACVD system starting from diborane (diluted in helium) and nitrogen. By varying the plasma conditions (bias voltage, ion current density), coatings were prepared with hardness values ranging from 2 to 12 GPa (measured with a nano-indenter). Infrared absorption measurements indicated that the BN was of the hexagonal type. A combination of glancing-angle X-ray diffraction measurements and simulations shows that the coatings consist of hexagonal-type BN crystallites with different degrees of disorder (nanocrystalline or turbostratic material). High-resolution transmission electron microscopy analysis revealed the presence of an amorphous interface layer and on top of this interface layer a well-developed fringe pattern characteristic for the basal planes in h-BN. Depending on the plasma process conditions, these fringe patterns showed different degrees of disorder as well as different orientational relationships with respect to the substrate surface. These observations were correlated with the mechanical properties of the films. (orig.) 14 refs.

  11. Study on microstructure change of Uranium nitride coated U-7wt%Mo powder by heat treatment

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Woo Hyoung; Park, Jae Soon; Lee, Hae In; Kim, Woo Jeong; Yang, Jae Ho; Park, Jong Man [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2011-10-15

    Uranium-molybdenum alloy particle dispersion fuel in an aluminum matrix with a high uranium density has been developed for a high performance research reactor in the RERTR program. In order to retard the fuel-matrix interaction in U-Mo/Al dispersion fuel in which the U-Mo fuel particles were dispersed in Al matrix, nitride layer coated U-Mo fuel particle has been designed and techniques to fabricate nitride-layer coated U-7wt%Mo particles have been developed in our lab. In this study, uranium nitride coated U-Mo particle has heat treatment for several times and degree. And we suggested for interaction layer remedy in U-Mo dispersion fuel. We investigate effect of heat treatment interaction layer evolution on uranium nitride coated U-Mo powder. The EDS and XRD analysis to investigate the phase evolution in uranium nitride coated layer is also a part of the present work

  12. Nanoscratch characterization of indium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Derming [Chin-Yi Univ. of Technology, Taichung, Taiwan (China). Dept. of Mechanical Engineering

    2014-01-15

    In this study we used RF plasma-assisted molecular beam epitaxy for the epitaxial growth of single-crystalline indium nitride (InN) thin films on aluminum nitride buffer layers/Si (111) substrates. We then used scratch techniques to study the influence of the c-axis orientation of the InN films and the beam interactions on the tribological performance of these samples. When grown at 440, 470, and 500 C, the coefficients of friction were 0.18, 0.22, and 0.26, respectively, under a normal force (F{sub n}) of 2000 {mu}N; 0.19, 0.23, and 0.27, respectively, under a value of Fn of 4000 {mu}N; and 0.21, 0.24, and 0.28, respectively, under a value of F{sub n} of 6000 {mu}N. These measured values increased slightly upon increasing the growth temperature because of the resulting smaller sizes of the apertures and/or pores in the inner films. The sliding resistance of the ploughed area was observed. The contact sliding line became increasingly noticeable upon increasing the value of F{sub n}; the plot of the friction with respect to the penetration depth revealed a significant relation in its adhesion properties presentation. (orig.)

  13. The Importance Of Surface Topography For The Biological Properties Of Nitrided Diffusion Layers Produced On Ti6Al4V Titanium Alloy

    Directory of Open Access Journals (Sweden)

    Wierzchoń T.

    2015-09-01

    Full Text Available Diffusion nitrided layers produced on titanium and its alloys are widely studied in terms of their application for cardiac and bone implants. The influence of the structure, the phase composition, topography and surface morphology on their biological properties is being investigated. The article presents the results of a study of the topography (nanotopography of the surface of TiN+Ti2N+αTi(N nitrided layers produced in low-temperature plasma on Ti6Al4V titanium alloy and their influence on the adhesion of blood platelets and their aggregates. The TEM microstructure of the produced layers have been examined and it was demonstrated that the interaction between platelets and the surface of the titanium implants subjected to glow-discharge nitriding can be shaped via modification of the roughness parameters of the external layer of the TiN titanium nitride nanocrystalline zone.

  14. Dynamic recovery in nanocrystalline Ni

    International Nuclear Information System (INIS)

    Sun, Z.; Van Petegem, S.; Cervellino, A.; Durst, K.; Blum, W.; Van Swygenhoven, H.

    2015-01-01

    The constant flow stress reached during uniaxial deformation of electrodeposited nanocrystalline Ni reflects a quasi-stationary balance between dislocation slip and grain boundary (GB) accommodation mechanisms. Stress reduction tests allow to suppress dislocation slip and bring recovery mechanisms into the foreground. When combined with in situ X-ray diffraction it can be shown that grain boundary recovery mechanisms play an important role in producing plastic strain while hardening the microstructure. This result has a significant consequence for the parameters of thermally activated glide of dislocations, such as athermal stress and activation volume, which are traditionally derived from stress/strain rate change tests

  15. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  16. Nitriding of high speed steel

    International Nuclear Information System (INIS)

    Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

    2010-01-01

    Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

  17. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  18. Preparation of nanocrystalline VN by the melamine reduction of V2O5 xerogel and its supercapacitive behavior

    International Nuclear Information System (INIS)

    Cheng Fukui; He Chun; Shu Dong; Chen Hongyu; Zhang Jie; Tang Shaoqing; Finlow, David E.

    2011-01-01

    Highlights: ► Organic nitridizing agent was employed for preparation of nanocrystalline VN. ► The supercapacitive behavior of VN was studied by electrochemical method. ► The supercapacitive behavior of VN was studied in three kinds of electrolyte. ► The specific capacitance of VN was determined as 273 F g −1 in 1.0 M KOH. ► The supercapacitive mechanism and involved factor on capacitance were analyzed. - Abstract: An organic nitridizing reagent was employed in the preparation of nanocrystalline VN at 800 °C under a N 2 atmosphere. The prepared VN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS), and its supercapacitive behavior was studied by cyclic voltammetry (CV) in three different types of aqueous electrolyte, 0.5 M H 2 SO 4 , 2.0 M NaNO 3 and 1.0 M KOH. The XRD results indicate that prepared VN has a cubic structure with space group Fm3m and a lattice parameter of 4.139 Å. The nanocrystalline structure of VN with a low degree of crystallinity was confirmed by TEM imaging. The presence of oxygen on the VN surface was detected by FTIR and XPS, and its molecular composition was determined to be VN 1.02 O 0.1 . The specific capacitances of nanocrystalline VN were determined to be 114, 45.7 and 273 F g −1 in 0.5 M H 2 SO 4 , 2.0 M NaNO 3 and 1.0 M KOH, respectively. Thus, the KOH solution was considered the best aqueous electrolyte for the capacitive performance of VN. The supercapacitive mechanism and the factor that influenced the specific capacitance are also analyzed in this paper.

  19. The precipitation and effect of nano nitrides in HSLC steel

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The existing forms of N and Al in HSLC (high strength low carbon) steel produced by TSCR (thin slab casting and rolling process), the precipitation thermodynamics and kinetics of AlN, and its effects on structure and mechanical property are studied. The experimental results show that only a small quantity of nitrogen is com- bined into AlN in HSLC steel produced by TSCR and most of the nitrogen in steel is still free nitrogen. Aluminum-nitride is mainly precipitated during the period of slow air cooling after coiling, but not during rolling and water cooling. The acid-soluble aluminum has no obvious effect on the grain size and mechanical property of HSLC steel produced by TSCR whose acid-soluble aluminum content is 0.005%―0.043%. The precipitation of AlN is not the main cause of grain refinement of HSLC steel produced by TSCR, nor is AlN the dominating precipitate that has precipitation strengthening effect. The nano nitrides are not pure AlN, but have complex compositions.

  20. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

  1. Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition

    International Nuclear Information System (INIS)

    Yamazaki, Shunsuke; Yatsui, Takashi; Ohtsu, Motoichi; Kim, Taw-Won; Fujioka, Hiroshi

    2004-01-01

    We fabricated UV-emitting nanocrystalline gallium nitride (GaN) films at room temperature using photochemical vapor deposition (PCVD). For the samples synthesized at room temperature with V/III ratios exceeding 5.0x10 4 , strong photoluminescence peaks at 3.365 and 3.310 eV, which can be ascribed to transitions in a mixed phase of cubic and hexagonal GaN, were observed at 5 K. A UV emission spectrum with a full width at half-maximum of 100 meV was observed, even at room temperature. In addition, x-ray photoelectron spectroscopy measurement revealed that the film deposited by PCVD at room temperature was well nitridized

  2. Growth Structure and Properties of Gradient Nanocrystalline Coatings of the Ti-Al-Si-Cu-N System

    Science.gov (United States)

    Ovchinnikov, S. V.; Pinzhin, Yu. P.

    2016-10-01

    Methods of electron microprobe analysis, X-ray structure analysis and electron microscopy were used to study the element composition and features of the structure-phase, elastic stress state of nanocrystalline coatings of the Ti- Al- Si- Cu- N system with gradient of copper concentration across their thickness. The authors established the effects of element composition modification, non-monotonous behavior of the lattice constant of alloyed nitride and rise in the bending-torsion value of the crystalline lattice in individual nanocrystals to values of around 400 degrees/μm with increase in copper concentration, whereas the sizes of alloyed nitride crystals remained practically unchanged. Mechanical (hardness), adhesion and tribological properties of coatings were examined. Comparative analysis demonstrates higher values of adhesion characteristics in the case of gradient coatings of the Ti- Al- Si- Cu- N system than in the case of single-layer (with constant element concentration) analogues.

  3. Bilirubin adsorption on nanocrystalline titania films

    International Nuclear Information System (INIS)

    Yang Zhengpeng; Si Shihui; Fung Yingsing

    2007-01-01

    Bilirubin produced from hemoglobin metabolism and normally conjugated with albumin is a kind of lipophilic endotoxin, and can cause various diseases when its concentration is high. Bilirubin adsorption on the nanocrystalline TiO 2 films was investigated using quartz crystal microbalance, UV-vis and IR techniques, and factors affecting its adsorption such as pH, bilirubin concentration, solution ionic strength, temperature and thickness of TiO 2 films were discussed. The amount of adsorption and parameters for the adsorption kinetics were estimated from the frequency measurements of quartz crystal microbalance. A fresh surface of the nanocrystalline TiO 2 films could be photochemically regenerated because holes and hydroxyl radicals were generated by irradiating the nanocrystalline TiO 2 films with UV light, which could oxidize and decompose organic materials, and the nanocrystalline TiO 2 films can be easily regenerated when it is used as adsorbent for the removal of bilirubin

  4. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  5. Polarity Control and Doping in Aluminum Gallium Nitride

    Science.gov (United States)

    2013-06-01

    Ladungsträger. Diese hohen Konzentrationen werden dadurch erklärt, dass im Bereich hoher Dotierungen die Formierungsenergien dieser Störstellen...elektrischen Widerstand führt. Des Weiteren wird im Rahmen dieser Arbeit gezeigt, dass das hier vorgestellte Modell zur Kontrolle des Einbaus von Defekten

  6. Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

    Science.gov (United States)

    Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

    2016-04-01

    Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

  7. Nuclear Radiation Tolerance of Single Crystal Aluminum Nitride Ultrasonic Transducer

    Science.gov (United States)

    Reinhard, Brian; Tittmann, Bernhard R.; Suprock, Andrew

    Ultrasonic technologies offer the potential for high accuracy and resolution in-pile measurement of a range of parameters, including geometry changes, temperature, crack initiation and growth, gas pressure and composition, and microstructural changes. Many Department of Energy-Office of Nuclear Energy (DOE-NE) programs are exploring the use of ultrasonic technologies to provide enhanced sensors for in-pile instrumentation during irradiation testing. For example, the ability of small diameter ultrasonic thermometers (UTs) to provide a temperature profile in candidate metallic and oxide fuel would provide much needed data for validating new fuel performance models, (Rempe et al., 2011; Kazys et al., 2005). These efforts are limited by the lack of identified ultrasonic transducer materials capable of long term performance under irradiation test conditions. To address this need, the Pennsylvania State University (PSU) was awarded an Advanced Test Reactor National Scientific User Facility (ATR NSUF) project to evaluate the performance of promising magnetostrictive and piezoelectric transducers in the Massachusetts Institute of Technology Research Reactor (MITR) up to a fast fluence of at least 1021 n/cm2. The irradiation is also supported by a multi-National Laboratory collaboration funded by the Nuclear Energy Enabling Technologies Advanced Sensors and Instrumentation (NEET ASI) program. The results from this irradiation, which started in February 2014, offer the potential to enable the development of novel radiation tolerant ultrasonic sensors for use in Material Testing Reactors (MTRs). As such, this test is an instrumented lead test and real-time transducer performance data is collected along with temperature and neutron and gamma flux data. Hence, results from this irradiation offer the potential to bridge the gap between proven out-of-pile ultrasonic techniques and in-pile deployment of ultrasonic sensors by acquiring the data necessary to demonstrate the performance of ultrasonic transducers. To date, very encouraging results have been attained as several transducers have continued to operate under irradiation. The irradiation is ongoing and will continue to approximately mid-2015.

  8. Role of nitrogen vacancies in cerium doped aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul, E-mail: abdulmajid40@yahoo.com [Department of Physics, University of Gujrat, Gujrat (Pakistan); Department of Adaptive Machine Systems, Osaka University, Osaka (Japan); Asghar, Farzana [Department of Physics, University of Gujrat, Gujrat (Pakistan); Rana, Usman Ali; Ud-Din Khan, Salah [Sustainable Energy Technologies Center, College of Engineering, King Saud University, PO-Box 800, Riyadh 11421 (Saudi Arabia); Yoshiya, Masato [Department of Adaptive Machine Systems, Osaka University, Osaka (Japan); Hussain, Fayyaz [Physics Department, Bahauddin Zakarya University, Multan (Pakistan); Ahmad, Iftikhar [Department of Mathematics, University of Gujrat, Gujrat (Pakistan)

    2016-08-15

    In this report, a systematic density functional theory based investigation to explain the character of nitrogen vacancies in structural, electronic and magnetic properties of Ce doped wurtzite AlN is presented. The work demonstrates the modification in the properties of the material upon doping thereby addressing dopant concentration and inter-dopant distance. The presence of anionic vacancy reveals spin polarization and introduction of magnetic character in the structure. The doping produced the magnetic character in the material which was of ferromagnetic nature in most cases except the situation when dopants separated by largest distance of 5.873 Å. The calculated values of total energy and exchange energy suggested the configuration including Ce{sub Al}–V{sub N} complex is more favorable and exhibits ferromagnetic ordering. - Highlights: • Ce doped AlN with and without nitrogen vacancy. • Dopant at nearest neighbor site introduce ferromagnetism. • Ce{sub Al}–V{sub N} complex is favorable in Ce:AlN.

  9. Role of nitrogen vacancies in cerium doped aluminum nitride

    International Nuclear Information System (INIS)

    Majid, Abdul; Asghar, Farzana; Rana, Usman Ali; Ud-Din Khan, Salah; Yoshiya, Masato; Hussain, Fayyaz; Ahmad, Iftikhar

    2016-01-01

    In this report, a systematic density functional theory based investigation to explain the character of nitrogen vacancies in structural, electronic and magnetic properties of Ce doped wurtzite AlN is presented. The work demonstrates the modification in the properties of the material upon doping thereby addressing dopant concentration and inter-dopant distance. The presence of anionic vacancy reveals spin polarization and introduction of magnetic character in the structure. The doping produced the magnetic character in the material which was of ferromagnetic nature in most cases except the situation when dopants separated by largest distance of 5.873 Å. The calculated values of total energy and exchange energy suggested the configuration including Ce Al –V N complex is more favorable and exhibits ferromagnetic ordering. - Highlights: • Ce doped AlN with and without nitrogen vacancy. • Dopant at nearest neighbor site introduce ferromagnetism. • Ce Al –V N complex is favorable in Ce:AlN.

  10. Mechanisms of Dynamic Deformation and Dynamic Failure in Aluminum Nitride

    Science.gov (United States)

    2012-06-01

    hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and...completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information...INTERNATIONAL RSRCH ASSOCIATES INC D ORPHAL CAGE 06EXO 5274 BLACKBIRD DR PLEASANTON CA 94566 1 BOB SKAGGS CONSULTANT S R

  11. Discrete microfluidics based on aluminum nitride surface acoustic wave devices

    OpenAIRE

    Zhou, J.; Pang, H.F.; Garcia-Gancedo, L.; Iborra, E.; Clement, M.; De Miguel-Ramos, M.; Jin, H.; Luo, J.K.; Smith, S.; Dong, S.R.; Wang, D.M.; Fu, Y.Q.

    2015-01-01

    To date, most surface acoustic wave (SAW) devices have been made from bulk piezoelectric materials, such as quartz, lithium niobate or lithium tantalite. These bulk materials are brittle, less easily integrated with electronics for control and signal processing, and difficult to realize multiple wave modes or apply complex electrode designs. Using thin film SAWs makes it convenient to integrate microelectronics and multiple sensing or microfluidics techniques into a lab-on-a-chip with low cos...

  12. Nitridation of si using mechano-fusion method

    International Nuclear Information System (INIS)

    Li, Z. L.; Calka, A.; Williams, J. S.

    1996-01-01

    Full text: It has been found that silicon nitride (Si 3 N 4 ) can be formed by ball milling of Si in ammonia. However only small fraction of Si can be transformed into 1 Si 3 N 4 . The major milling effect is the formation of poly/nanocrystalline silicon. At this stage of research it is difficult to answer the question why ball milling causes only limited formation of Si 3 N 4 . It is due to little understanding of 1 processes occurring during milling. Therefore, the purpose of this work was to study nitridation reaction during milling of Si in ammonia. In particular the 1 effect of milling conditions such as milling energies, atmosphere and a form of starting material was studied. The micro/macrostructural development during milling and subsequent annealing was studied using x-ray diffractometry, thermal analysis, elemental analysis measurement. It was found that the transformed fraction of Si 3 N 4 compound is strongly dependent on milling energies and milling atmosphere

  13. Hot pressing of uranium nitride and mixed uranium plutonium nitride

    International Nuclear Information System (INIS)

    Chang, J.Y.

    1975-01-01

    The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

  14. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  15. Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides

    International Nuclear Information System (INIS)

    Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi

    2003-01-01

    Texture control of sputter-deposited nitride films has provoked a great deal of interest due to its technological importance. Despite extensive research, however, the reported results are scattered and discussions about the origin of preferred orientation (PO) are sometimes conflicting, and therefore controversial. The aim of this study is to acquire a clear perspective in order to discuss the origin of PO of sputter-deposited nitrides. Among nitrides, we focus on titanium nitride (TiN), aluminum nitride (AlN), and tantalum nitride (TaN), which are three commonly used nitrides. First, we collected reported experimental results about the relation between operating conditions and PO, because PO is considered to be determined by film formation processes, such as surface diffusion or grain growth, which is affected by operating conditions. We also collected reported results about such PO-determining processes. Then, we categorized the PO-determining processes into an initial stage and a growth stage of film deposition, and further categorized each stage into a vapor-solid interface and a solid-solid interface. Then, we related each stage and interface to film morphology and to PO-determining processes. Finally, based on existing results, previous models, and proposed schema, we discuss the origin of PO. Based on previous experimental results on film morphology, PO of nitride films occurred in the growth stage at the vapor-solid interface, where the sticking process of the precursor and the surface diffusion process determine PO, rather than in the initial stage and in the growth stage at the solid-solid interface. TiN (002) PO, however, seems to be caused in the initial stage at the solid-solid interface

  16. Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

    Science.gov (United States)

    2003-03-01

    58: 1306 (1995). 15. Moxom, Jeremy. “Characterization of Mg doped GaN by positron annihilation spectroscopy .” Journal of Applied Physics, 92... semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence...short wavelength optoelectronic applications that are beyond the range of present semiconductor devices. The AlGaN and GaN materials have these

  17. The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

    National Research Council Canada - National Science Library

    McClory, John W

    2008-01-01

    AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured...

  18. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    .... This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation...

  19. The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

    Science.gov (United States)

    2008-06-01

    potentials used in the discussion. ........... 41 15. Energy band diagram of an unpassivated HFET using Davinci showing the relative heights and...integration into a dose received in the material of interest. The tool used to perform these calculations is the TIGER Monte Carlo electron transport code [30...height and width of the second barrier a model of the HFETs was built in the Davinci modeling program [61]. The resulting energy band diagram is shown in

  20. Nanocrystal conversion chemistry: A unified and materials-general strategy for the template-based synthesis of nanocrystalline solids

    International Nuclear Information System (INIS)

    Vasquez, Yolanda; Henkes, Amanda E.; Chris Bauer, J.; Schaak, Raymond E.

    2008-01-01

    The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and nitrides. - Graphical abstract: Nanocrystal conversion chemistry uses pre-formed nanoparticles as templates for chemical transformation into derivative solids, helping to define the composition, crystal structure, and morphology of product nanocrystals that have more complex features than their precursor templates. This article highlights the application of this concept to diverse classes of solids, including metals, oxides, chalcogenides, phosphides, alloys, intermetallics, sulfides, and nitrides

  1. Structural elucidation of nanocrystalline biomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Maltsev, S.

    2008-10-23

    Bone diseases, such as osteoporosis and osteoarthritis, are the second most prevalent health problem worldwide. In Germany approximately 5 millions people are affected by arthritis. Investigating biomineralization processes and bone molecular structure is of key importance for developing new drugs for preventing and healing bone diseases. Nuclear magnetic resonance (NMR) was the primary technique used due to its advantages in characterising poorly ordered and disordered materials. Compared to all the diffraction techniques that widely applied in structural investigations, the usefulness of NMR is independent of long range molecular order. This makes NMR an outstanding technique for studies of complex/amorphous materials. Conventional NMR experiments (single pulse, spin-echo, cross polarization (CP), etc.) as well as their modifications and high-end techniques (2D HETCOR, REDOR, etc.) were used in this work. Combining the contributions from different techniques enhances the information content of the investigations and can increase the precision of the overall conclusions. Also XRD, TEM and FTIR were applied to different extent in order to get a general idea of nanocrystalline hydroxyapatite crystallite structure. Results: - A new approach named 'Solid-state NMR spectroscopy using the lost I spin magnetization in polarization transfer experiments' has been developed for measuring the transferred I spin magnetization from abundant nuclei, which is normally lost when detecting the S spin magnetization. - A detailed investigation of nanocrystalline hydroxyapatite core was made to prove that proton environment of the phosphates units and phosphorus environment of hydroxyl units are the same as in highly crystalline hydroxyapatite sample. - Using XRD it was found that the surface of the hydroxyapatite nanocrystals is not completely disordered, as it was suggested before, but resembles the hydroxyapatite structure with HPO{sub 4}{sup 2-} (and some CO{sub 3}{sup

  2. Structural elucidation of nanocrystalline biomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Maltsev, S

    2008-10-23

    Bone diseases, such as osteoporosis and osteoarthritis, are the second most prevalent health problem worldwide. In Germany approximately 5 millions people are affected by arthritis. Investigating biomineralization processes and bone molecular structure is of key importance for developing new drugs for preventing and healing bone diseases. Nuclear magnetic resonance (NMR) was the primary technique used due to its advantages in characterising poorly ordered and disordered materials. Compared to all the diffraction techniques that widely applied in structural investigations, the usefulness of NMR is independent of long range molecular order. This makes NMR an outstanding technique for studies of complex/amorphous materials. Conventional NMR experiments (single pulse, spin-echo, cross polarization (CP), etc.) as well as their modifications and high-end techniques (2D HETCOR, REDOR, etc.) were used in this work. Combining the contributions from different techniques enhances the information content of the investigations and can increase the precision of the overall conclusions. Also XRD, TEM and FTIR were applied to different extent in order to get a general idea of nanocrystalline hydroxyapatite crystallite structure. Results: - A new approach named 'Solid-state NMR spectroscopy using the lost I spin magnetization in polarization transfer experiments' has been developed for measuring the transferred I spin magnetization from abundant nuclei, which is normally lost when detecting the S spin magnetization. - A detailed investigation of nanocrystalline hydroxyapatite core was made to prove that proton environment of the phosphates units and phosphorus environment of hydroxyl units are the same as in highly crystalline hydroxyapatite sample. - Using XRD it was found that the surface of the hydroxyapatite nanocrystals is not completely disordered, as it was suggested before, but resembles the hydroxyapatite structure with HPO{sub 4}{sup 2-} (and some CO{sub 3}{sup 2

  3. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  4. Nanocrystalline diamond: In vitro biocompatibility assessment by MG63 and human bone marrow cells cultures.

    Science.gov (United States)

    Amaral, M; Dias, A G; Gomes, P S; Lopes, M A; Silva, R F; Santos, J D; Fernandes, M H

    2008-10-01

    Nanocrystalline diamond (NCD) has a great potential for prosthetic implants coating. Nevertheless, its biocompatibility still has to be better understood. To do so, we employed several materials characterization techniques (SEM, AFM, micro-Raman spectroscopy) and cell culture assays using MG63 osteoblast-like and human bone marrow cells. Biochemical routines (MTT assays, Lowry's method, ALP activity) supported by SEM and confocal microscopy characterization were carried out. We used silicon nitride (Si3N4) substrates for NCD coatings based on a previous demonstration of the superior adhesion and tribological performance of these NCD coated ceramics. Results demonstrate an improved human osteoblast proliferation and the stimulation of differentiated markers, like ALP activity and matrix mineralization, compared with standard polystyrene tissue culture plates. The nanometric featuring of NCD, associated to its chemical affinity are key points for bone regeneration purposes.

  5. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    family have (0001) interfaces which bear a surface charge σ0 that results from the polarizations of the two alloys at the interface...function of the Al content of the AlGaN barrier, as well as its thickness (Kocan, 2003; Lenka and Panda , 2011). In my dissertation, the surface...incorporation.” Applied Physics Letters, 71 (1997): 1359. Lenka, T. R., and Panda , A. K.. “Effect of structural parameters of 2DEG and C~V

  6. In situ TEM study of microplasticity and Bauschinger effect in nanocrystalline metals

    International Nuclear Information System (INIS)

    Rajagopalan, Jagannathan; Rentenberger, Christian; Peter Karnthaler, H.; Dehm, Gerhard; Saif, M. Taher A.

    2010-01-01

    In situ transmission electron microscopy straining experiments with concurrent macroscopic stress-strain measurements were performed to study the effect of microstructural heterogeneity on the deformation behavior of nanocrystalline metal films. In microstructurally heterogeneous gold films (mean grain size d m = 70 nm) comprising randomly oriented grains, dislocation activity is confined to relatively larger grains, with smaller grains deforming elastically, even at applied strains approaching 1.2%. This extended microplasticity leads to build-up of internal stresses, inducing a large Bauschinger effect during unloading. Microstructurally heterogeneous aluminum films (d m = 140 nm) also show similar behavior. In contrast, microstructurally homogeneous aluminum films comprising mainly two grain families, both favorably oriented for dislocation glide, show limited microplastic deformation and minimal Bauschinger effect despite having a comparable mean grain size (d m = 120 nm). A simple model is proposed to describe these observations. Overall, our results emphasize the need to consider both microstructural size and heterogeneity in modeling the mechanical behavior of nanocrystalline metals.

  7. In situ TEM study of microplasticity and Bauschinger effect in nanocrystalline metals

    Energy Technology Data Exchange (ETDEWEB)

    Rajagopalan, Jagannathan [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Rentenberger, Christian; Peter Karnthaler, H. [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Wien (Austria); Dehm, Gerhard [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, and Dept. Materials Physics, University of Leoben, Jahnstr.12, 8700 Leoben (Austria); Saif, M. Taher A., E-mail: saif@illinois.edu [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, 1206 W Green Street, Urbana, IL 61801 (United States)

    2010-08-15

    In situ transmission electron microscopy straining experiments with concurrent macroscopic stress-strain measurements were performed to study the effect of microstructural heterogeneity on the deformation behavior of nanocrystalline metal films. In microstructurally heterogeneous gold films (mean grain size d{sub m} = 70 nm) comprising randomly oriented grains, dislocation activity is confined to relatively larger grains, with smaller grains deforming elastically, even at applied strains approaching 1.2%. This extended microplasticity leads to build-up of internal stresses, inducing a large Bauschinger effect during unloading. Microstructurally heterogeneous aluminum films (d{sub m} = 140 nm) also show similar behavior. In contrast, microstructurally homogeneous aluminum films comprising mainly two grain families, both favorably oriented for dislocation glide, show limited microplastic deformation and minimal Bauschinger effect despite having a comparable mean grain size (d{sub m} = 120 nm). A simple model is proposed to describe these observations. Overall, our results emphasize the need to consider both microstructural size and heterogeneity in modeling the mechanical behavior of nanocrystalline metals.

  8. Formation of nanocrystalline surface layers in various metallic materials by near surface severe plastic deformation

    Directory of Open Access Journals (Sweden)

    Masahide Sato, Nobuhiro Tsuji, Yoritoshi Minamino and Yuichiro Koizumi

    2004-01-01

    Full Text Available The surface of the various kinds of metallic materials sheets were severely deformed by wire-brushing at ambient temperature to achieve nanocrystalline surface layer. The surface layers of the metallic materials developed by the near surface severe plastic deformation (NS-SPD were characterized by means of TEM. Nearly equiaxed nanocrystals with grain sizes ranging from 30 to 200 nm were observed in the near surface regions of all the severely scratched metallic materials, which are Ti-added ultra-low carbon interstitial free steel, austenitic stainless steel (SUS304, 99.99 wt.%Al, commercial purity aluminum (A1050 and A1100, Al–Mg alloy (A5083, Al-4 wt.%Cu alloy, OFHC-Cu (C1020, Cu–Zn alloy (C2600 and Pb-1.5%Sn alloy. In case of the 1050-H24 aluminum, the depth of the surface nanocrystalline layer was about 15 μm. It was clarified that wire-brushing is an effective way of NS-SPD, and surface nanocrystallization can be easily achieved in most of metallic materials.

  9. Controlling of Nitriding Process on Reactive Plasma Spraying of Al Particles

    Energy Technology Data Exchange (ETDEWEB)

    Shahien, Mohammed [Graduate Student, Toyohashi University of Technology (Japan); Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro, E-mail: mo.shahien@yahoo.com [Toyohashi University of Technology (Japan)

    2011-10-29

    Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of aluminum nitride (AlN) thermally sprayed coatings. To fabricate thick A lN coatings in RPS process, controlling and improving the in-flight nitriding reaction of Al particles is required. In this study, it was possible to control the nitriding reaction by using ammonium chloride (NH{sub 4}Cl) powders. Thick and dense AlN coating (more than 300 {mu}m thickness) was successfully fabricated with small addition of NH{sub 4}Cl powders. Thus, addition of NH{sub 4}Cl prevented the Al aggregation by changing the reaction pathway to a mild way with no explosive mode (relatively low heating rates) and it acts as a catalyst, nitrogen source and diluent agent.

  10. Controlling of Nitriding Process on Reactive Plasma Spraying of Al Particles

    International Nuclear Information System (INIS)

    Shahien, Mohammed; Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro

    2011-01-01

    Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of aluminum nitride (AlN) thermally sprayed coatings. To fabricate thick A lN coatings in RPS process, controlling and improving the in-flight nitriding reaction of Al particles is required. In this study, it was possible to control the nitriding reaction by using ammonium chloride (NH 4 Cl) powders. Thick and dense AlN coating (more than 300 μm thickness) was successfully fabricated with small addition of NH 4 Cl powders. Thus, addition of NH 4 Cl prevented the Al aggregation by changing the reaction pathway to a mild way with no explosive mode (relatively low heating rates) and it acts as a catalyst, nitrogen source and diluent agent.

  11. A first principle study of band structure of III-nitride compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Rashid [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)]. E-mail: rasofi@hotmail.com; Akbarzadeh, H. [Department of Physics, Isfahan University of Technology, 841546 Isfahan (Iran, Islamic Republic of); Fazal-e-Aleem [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)

    2005-12-15

    The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data.

  12. Polarity Control in Group-III Nitrides beyond Pragmatism

    Science.gov (United States)

    Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

    2016-05-01

    Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

  13. Zirconium nitride hard coatings

    International Nuclear Information System (INIS)

    Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

    2010-01-01

    Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

  14. Pyrochemical reprocessing of nitride fuel

    International Nuclear Information System (INIS)

    Nakazono, Yoshihisa; Iwai, Takashi; Arai, Yasuo

    2004-01-01

    Electrochemical behavior of actinide nitrides in LiCl-KCl eutectic melt was investigated in order to apply pyrochemical process to nitride fuel cycle. The electrode reaction of UN and (U, Nd)N was examined by cyclic voltammetry. The observed rest potential of (U, Nd)N depended on the equilibrium of U 3+ /UN and was not affected by the addition of NdN of 8 wt.%. (author)

  15. Superplastic forging nitride ceramics

    Science.gov (United States)

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  16. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  17. Nitride stabilized core/shell nanoparticles

    Science.gov (United States)

    Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

    2018-01-30

    Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

  18. Nanocrystalline permanent magnets with enhanced properties

    International Nuclear Information System (INIS)

    Leonowicz, M.

    2002-01-01

    Parameters of permanent magnets result from the combination of intrinsic properties such as saturation magnetization, magnetic exchange, and magnetocrystalline energy, as well as microstructural parameters such as phase structure, grain size, and orientation. Reduction of grain size into nanocrystalline regime (∼ 50 nm) leads to the enhanced remanence which derives from ferromagnetic exchange coupling between highly refined grains. In this study the fundamental phenomena, quantities, and structure parameters, which define nanophase permanent magnets are presented and discussed. The theoretical considerations are confronted with experimental data for nanocrystalline Sm-Fe-N type permanent magnets. (author)

  19. Direct Coating of Nanocrystalline Diamond on Steel

    Science.gov (United States)

    Tsugawa, Kazuo; Kawaki, Shyunsuke; Ishihara, Masatou; Hasegawa, Masataka

    2012-09-01

    Nanocrystalline diamond films have been successfully deposited on stainless steel substrates without any substrate pretreatments to promote diamond nucleation, including the formation of interlayers. A low-temperature growth technique, 400 °C or lower, in microwave plasma chemical vapor deposition using a surface-wave plasma has cleared up problems in diamond growth on ferrous materials, such as the surface graphitization, long incubation time, substrate softening, and poor adhesion. The deposited nanocrystalline diamond films on stainless steel exhibit good adhesion and tribological properties, such as a high wear resistance, a low friction coefficient, and a low aggression strength, at room temperature in air without lubrication.

  20. ALUMINUM BOX BUNDLING PRESS

    Directory of Open Access Journals (Sweden)

    Iosif DUMITRESCU

    2015-05-01

    Full Text Available In municipal solid waste, aluminum is the main nonferrous metal, approximately 80- 85% of the total nonferrous metals. The income per ton gained from aluminum recuperation is 20 times higher than from glass, steel boxes or paper recuperation. The object of this paper is the design of a 300 kN press for aluminum box bundling.

  1. Leachability of nitrided ilmenite in hydrochloric acid

    CSIR Research Space (South Africa)

    Swanepoel, JJ

    2010-10-01

    Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

  2. Leachability of nitrided ilmenite in hydrochloric acid

    OpenAIRE

    Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

    2011-01-01

    Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

  3. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  4. Fabrication of vanadium nitride by carbothermal nitridation reaction

    International Nuclear Information System (INIS)

    Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

    2005-01-01

    Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

  5. Chemical vapor deposition of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Vyrovets, I.I.; Gritsyna, V.I.; Dudnik, S.F.; Opalev, O.A.; Reshetnyak, O.M.; Strel'nitskij, V.E.

    2008-01-01

    The brief review of the literature is devoted to synthesis of nanocrystalline diamond films. It is shown that the CVD method is an effective way for deposition of such nanostructures. The basic technological methods that allow limit the size of growing diamond crystallites in the film are studied.

  6. Synthesis and characterization of nanocrystalline zinc ferrite

    DEFF Research Database (Denmark)

    Jiang, J.S.; Yang, X.L.; Gao, L.

    1999-01-01

    Nanocrystalline zinc ferrite powders with a partially inverted spinel structure were synthesized by high-energy ball milling in a closed container at ambient temperature from a mixture of alpha-Fe2O3 and ZnO crystalline powders in equimolar ratio. From low-temperature and in-field Mossbauer...

  7. Multiphase Nanocrystalline Ceramic Concept for Nuclear Fuel

    Energy Technology Data Exchange (ETDEWEB)

    Mecartnery, Martha [Univ. of California, Irvine, CA (United States); Graeve, Olivia [Univ. of California, San Diego, CA (United States); Patel, Maulik [Univ. of Liverpool (United Kingdom)

    2017-05-25

    The goal of this research is to help develop new fuels for higher efficiency, longer lifetimes (higher burn-up) and increased accident tolerance in future nuclear reactors. Multiphase nanocrystalline ceramics will be used in the design of simulated advanced inert matrix nuclear fuel to provide for enhanced plasticity, better radiation tolerance, and improved thermal conductivity

  8. Multiphase Nanocrystalline Ceramic Concept for Nuclear Fuel

    International Nuclear Information System (INIS)

    Mecartnery, Martha; Graeve, Olivia; Patel, Maulik

    2017-01-01

    The goal of this research is to help develop new fuels for higher efficiency, longer lifetimes (higher burn-up) and increased accident tolerance in future nuclear reactors. Multiphase nanocrystalline ceramics will be used in the design of simulated advanced inert matrix nuclear fuel to provide for enhanced plasticity, better radiation tolerance, and improved thermal conductivity

  9. Characterization of nanocrystalline silicon germanium film and ...

    African Journals Online (AJOL)

    The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

  10. Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

    National Research Council Canada - National Science Library

    Moore, Elizabeth A

    2007-01-01

    ...) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time, and implantation dose...

  11. Characterization of aluminum/aluminum nitride coatings sputter deposited using the pulsed-gas process

    International Nuclear Information System (INIS)

    Springer, R.W.; Hosford, C.D.

    1981-01-01

    A dc triode magnetron has been used to produce freestanding Al/Al + AlN lamellar foils by sputter deposition. The 5-μm-thick foils produced on both flat substrates as well as curved substrates exhibited good specularity as well as excellent mechanical properties. The pulse spacing was varied from none to 100-nm spacing. The yield strength of the material was found to obey the Hall-Petch relation sigma/sub ys/ = 230 + .07/d/sup 1/2/, where sigma/sub ys/ is in MPa. Auger electron Spectroscopy and Secondary Ion Mass Spectroscopy indicate that the large flow stress of 230 MPa must be due to grain refinement of the extended source and not an impurity effect. The result is that limitations of masking found in uniaxial flux sources for curved surfaces can be removed allowing the high quality coating of more general shapes

  12. Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

    Science.gov (United States)

    2007-12-01

    like to thank the many friends I have made along the way, Matt Lange, Catherine Taylor, Glen Kading, and Greg Pitz for helping me to remember that life...oxidation. The Ta wrapping wire survives the anneal intact, but becomes brittle enough to easily break off. The samples are taken to the clean room

  13. Coating of Titanium Nitride on Stainless Steel Targets by a 4 kJ Plasma Focus Device

    Science.gov (United States)

    Omrani, M.; Habibi, M.; Amrollahi, R.

    2012-08-01

    Titanium nitride thin films were deposited on stainless steel (SS316L) targets by using a 4 kJ plasma focus device. The corresponding energy flux delivered to SS316L surface is estimated to be 2.69 × 1013 kev cm-3 ns-1. X-ray diffraction analysis reveals the formation of a nanocrystalline titanium nitride coating on the surface of targets. Thickness of the elements found on the surface of treated samples which are obtained by Rutherford backscattering spectrometry analysis (RBS) were (×1015 at/cm2) .45% Ti, 50% N and 5% Fe. Scanning electron microscopy was used to indicate changes in surface morphology. Existence of grains in different size confirms the formation of TiN crystals on the surface of targets.

  14. Graphene-aluminum nanocomposites

    International Nuclear Information System (INIS)

    Bartolucci, Stephen F.; Paras, Joseph; Rafiee, Mohammad A.; Rafiee, Javad; Lee, Sabrina; Kapoor, Deepak; Koratkar, Nikhil

    2011-01-01

    Highlights: → We investigated the mechanical properties of aluminum and aluminum nanocomposites. → Graphene composite had lower strength and hardness compared to nanotube reinforcement. → Processing causes aluminum carbide formation at graphene defects. → The carbides in between grains is a source of weakness and lowers tensile strength. - Abstract: Composites of graphene platelets and powdered aluminum were made using ball milling, hot isostatic pressing and extrusion. The mechanical properties and microstructure were studied using hardness and tensile tests, as well as electron microscopy, X-ray diffraction and differential scanning calorimetry. Compared to the pure aluminum and multi-walled carbon nanotube composites, the graphene-aluminum composite showed decreased strength and hardness. This is explained in the context of enhanced aluminum carbide formation with the graphene filler.

  15. Simulation of the Nitriding Process

    Science.gov (United States)

    Krukovich, M. G.

    2004-01-01

    Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

  16. Direct bonding of ALD Al2O3 to silicon nitride thin films

    DEFF Research Database (Denmark)

    Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

    2017-01-01

    microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

  17. Precipitation of metal nitrides from chloride melts

    International Nuclear Information System (INIS)

    Slater, S.A.; Miller, W.E.; Willit, J.L.

    1996-01-01

    Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts

  18. BONDING ALUMINUM METALS

    Science.gov (United States)

    Noland, R.A.; Walker, D.E.

    1961-06-13

    A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.

  19. Aluminum powder metallurgy processing

    Energy Technology Data Exchange (ETDEWEB)

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  20. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  1. Radiation influence on properties of nanocrystalline alloy

    International Nuclear Information System (INIS)

    Holkova, D.; Sitek, J.; Novak, P.; Dekan, J.

    2016-01-01

    Our work is focused on the studied of structural changes amorphous and nanocrystalline alloys after irradiation with electrons. For the analysis of these alloy we use two spectroscopic methods: Moessbauer spectroscopy and XRD. Measurements of nanocrystalline (Fe 3 Ni 1 ) 81 Nb 7 B 12 samples before and after electrons irradiation by means of Moessbauer spectroscopy and XRD showed that the electrons causes changes in magnetic structure which is reflected changes of direction of net magnetic moment. Structural changes occurs in the frame of error indicated by both spectroscopic methods. We can confirm that this kind alloys a resistive again electrons irradiation up to doses of 4 MGy. We observed in this frame only beginning of the radiation damage. (authors)

  2. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

  3. Laser shock wave consolidation of nanodiamond powders on aluminum 319

    Energy Technology Data Exchange (ETDEWEB)

    Molian, Pal [Laboratory for Lasers, MEMS, and Nanotechnology, Department of Mechanical Engineering, Iowa State University, Ames, IA 50011-2161 (United States)], E-mail: molian@iastate.edu; Molian, Raathai; Nair, Rajeev [Laboratory for Lasers, MEMS, and Nanotechnology, Department of Mechanical Engineering, Iowa State University, Ames, IA 50011-2161 (United States)

    2009-01-01

    A novel coating approach, based on laser shock wave generation, was employed to induce compressive pressures up to 5 GPa and compact nanodiamond (ND) powders (4-8 nm) on aluminum 319 substrate. Raman scattering indicated that the coating consisted of amorphous carbon and nanocrystalline graphite with peaks at 1360 cm{sup -1} and 1600 cm{sup -1} respectively. Scanning electron microscopy revealed a wavy, non-uniform coating with an average thickness of 40 {mu}m and absence of thermal effect on the surrounding material. The phase transition from nanodiamond to other phases of carbon is responsible for the increased coating thickness. Vicker's microhardness test showed hardness in excess of 1000 kg{sub f}/mm{sup 2} (10 GPa) while nanoindentation test indicated much lower hardness in the range of 20 MPa to 2 GPa. Optical surface profilometry traces displayed slightly uneven surfaces compared to the bare aluminum with an average surface roughness (R{sub a}) in the range of 1.5-4 {mu}m depending on the shock wave pressure and type of confining medium. Ball-on-disc tribometer tests showed that the coefficient of friction and wear rate were substantially lower than the smoother, bare aluminum sample. Laser shock wave process has thus aided in the generation of a strong, wear resistant, durable carbon composite coating on aluminum 319 substrate.

  4. Solubility of Carbon in Nanocrystalline -Iron

    OpenAIRE

    Alexander Kirchner; Bernd Kieback

    2012-01-01

    A thermodynamic model for nanocrystalline interstitial alloys is presented. The equilibrium solid solubility of carbon in -iron is calculated for given grain size. Inside the strained nanograins local variation of the carbon content is predicted. Due to the nonlinear relation between strain and solubility, the averaged solubility in the grain interior increases with decreasing grain size. The majority of the global solubility enhancement is due to grain boundary enrichment however. Therefor...

  5. Formation of nanocrystalline and amorphous phase of Al-Pb-Si-Sn-Cu powder during mechanical alloying

    International Nuclear Information System (INIS)

    Ran Guang; Zhou Jingen; Xi Shengqi; Li Pengliang

    2006-01-01

    Al-15%Pb-4%Si-1%Sn-1.5%Cu alloys (mass fraction, %) were prepared by mechanical alloying (MA). Phase transformation and microstructure characteristics of the alloy powders were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the nanocrystalline supersaturated solid solutions and amorphous phase in the powders are obtained during MA. The effect of ball milling is more evident to lead than to aluminum. During MA, the mixture powders are firstly fined, alloyed, nanocrystallized and then the nanocrystalline partly transforms to amorphous phase. A thermodynamic model is developed based on semi-experimental theory of Miedema to calculate the driving force for phase evolution. The thermodynamic analysis shows that there is no chemical driving force to form a crystalline solid solution from the elemental components. But for the amorphous phase, the Gibbs free energy is higher than 0 for the alloy with lead content in the ranges of 0-86.8 at.% and 98.4-100 at.% and lower than 0 in range of 86.8-98.4 at.%. For the Al-2.25 at.%Pb (Al-15%Pb, mass fraction, %), the driving force for formation of amorphization and nanocrystalline supersaturated solid solutions are provided not by the negative heat of mixing but by mechanical work

  6. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  7. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

    2008-01-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

  8. Characterization of amorphous and nanocrystalline carbon films

    International Nuclear Information System (INIS)

    Chu, Paul K.; Li Liuhe

    2006-01-01

    Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

  9. Corrosion of silicon nitride in high temperature alkaline solutions

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

    2016-08-01

    The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

  10. Compaction simulation of nano-crystalline metals with molecular dynamics analysis

    Directory of Open Access Journals (Sweden)

    Khoei A.R.

    2016-01-01

    Full Text Available The molecular-dynamics analysis is presented for 3D compaction simulation of nano-crystalline metals under uniaxial compaction process. The nano-crystalline metals consist of nickel and aluminum nano-particles, which are mixed with specified proportions. The EAM pair-potential is employed to model the formation of nano-particles at different temperatures, number of nano-particles, and mixing ratio of Ni and Al nano-particles to form the component into the shape of a die. The die-walls are modeled using the Lennard-Jones inter-atomic potential between the atoms of nano-particles and die-walls. The forming process is model in uniaxial compression, which is simulated until the full-dense condition is attained at constant temperature. Numerical simulations are performed by presenting the densification of nano-particles at different deformations and distribution of dislocations. Finally, the evolutions of relative density with the pressure as well as the stress-strain curves are depicted during the compaction process.

  11. Structure-property correlations in nanocrystalline Al-Zr alloy composites

    International Nuclear Information System (INIS)

    Rittner, M.N.; Argonne National Lab., IL; Weertman, J.R.; Eastman, J.A.

    1996-01-01

    A study of the structure, grain size stability and Vickers microhardness of nanocrystalline aluminum-zirconium alloy composites was conducted. Samples were synthesized by the inert gas condensation process with electron beam evaporation. Transmission electron microscope examinations of the samples were performed at room and elevated temperatures. The behavior of the microstructures of the samples with time and temperature was investigated as a function of specimen composition. Vickers microhardness data were evaluated at room temperature in as-produced and polished compacted specimens. The local chemical composition of individual microhardness indents and average values of the grain size and porosity level were determined for a number of samples. Correlations among these microstructural variables and hardness were determined using multiple regression techniques

  12. Anodizing Aluminum with Frills.

    Science.gov (United States)

    Doeltz, Anne E.; And Others

    1983-01-01

    "Anodizing Aluminum" (previously reported in this journal) describes a vivid/relevant laboratory experience for general chemistry students explaining the anodizing of aluminum in sulfuric acid and constrasting it to electroplating. Additions to this procedure and the experiment in which they are used are discussed. Reactions involved are…

  13. Is the Aluminum Hypothesis Dead?

    Science.gov (United States)

    2014-01-01

    The Aluminum Hypothesis, the idea that aluminum exposure is involved in the etiology of Alzheimer disease, dates back to a 1965 demonstration that aluminum causes neurofibrillary tangles in the brains of rabbits. Initially the focus of intensive research, the Aluminum Hypothesis has gradually been abandoned by most researchers. Yet, despite this current indifference, the Aluminum Hypothesis continues to attract the attention of a small group of scientists and aluminum continues to be viewed with concern by some of the public. This review article discusses reasons that mainstream science has largely abandoned the Aluminum Hypothesis and explores a possible reason for some in the general public continuing to view aluminum with mistrust. PMID:24806729

  14. Wear monitoring of protective nitride coatings using image processing

    DEFF Research Database (Denmark)

    Rasmussen, Inge Lise; Guibert, M.; Belin, M.

    2010-01-01

    -meter with up to 105 19 repetitive cycles, eventually leaving the embedded TiN signal layer uncovered at the bottom the wear scar. 20 The worn surface was characterized by subsequent image processing. A color detection of the wear scar with 21 the exposed TiN layer by a simple optical imaging system showed......A double-layer model system, consisting of a thin layer of tribological titanium aluminum nitride (TiAlN) on 17 top of titanium nitride (TiN), was deposited on polished 100Cr6 steel substrates. The TiAlN top-coatings 18 were exposed to abrasive wear by a reciprocating wear process in a linear tribo...... a significant increase up to a factor of 2 of 22 the relative color values from the TiAlN top layers to the embedded TiN signal layers. This behavior agrees 23 well with the results of reflectance detection experiment with a red laser optical system on the same system. 24 Thus we have demonstrated that image...

  15. The aluminum smelting process.

    Science.gov (United States)

    Kvande, Halvor

    2014-05-01

    This introduction to the industrial primary aluminum production process presents a short description of the electrolytic reduction technology, the history of aluminum, and the importance of this metal and its production process to modern society. Aluminum's special qualities have enabled advances in technologies coupled with energy and cost savings. Aircraft capabilities have been greatly enhanced, and increases in size and capacity are made possible by advances in aluminum technology. The metal's flexibility for shaping and extruding has led to architectural advances in energy-saving building construction. The high strength-to-weight ratio has meant a substantial reduction in energy consumption for trucks and other vehicles. The aluminum industry is therefore a pivotal one for ecological sustainability and strategic for technological development.

  16. Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

    Energy Technology Data Exchange (ETDEWEB)

    Poffo, C.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

    2011-04-01

    Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 {sup o}C the heat transfer is controlled by crystalline component.

  17. Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

    International Nuclear Information System (INIS)

    Poffo, C.M.; Lima, J.C. de; Souza, S.M.; Triches, D.M.; Grandi, T.A.; Biasi, R.S. de

    2011-01-01

    Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 o C the heat transfer is controlled by crystalline component.

  18. Solid state consolidation nanocrystalline copper-tungsten using cold spray

    Energy Technology Data Exchange (ETDEWEB)

    Hall, Aaron Christopher [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sarobol, Pylin [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Argibay, Nicolas [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Clark, Blythe [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Diantonio, Christopher [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    It is well known that nanostructured metals can exhibit significantly improved properties compared to metals with conventional grain size. Unfortunately, nanocrystalline metals typically are not thermodynamically stable and exhibit rapid grain growth at moderate temperatures. This severely limits their processing and use, making them impractical for most engineering applications. Recent work has shown that a number of thermodynamically stable nanocrystalline metal alloys exist. These alloys have been prepared as powders using severe plastic deformation (e.g. ball milling) processes. Consolidation of these powders without compromise of their nanocrystalline microstructure is a critical step to enabling their use as engineering materials. We demonstrate solid-state consolidation of ball milled copper-tantalum nanocrystalline metal powder using cold spray. Unfortunately, the nanocrystalline copper-tantalum powder that was consolidated did not contain the thermodynamically stable copper-tantalum nanostructure. Nevertheless, this does this demonstrates a pathway to preparation of bulk thermodynamically stable nanocrystalline copper-tantalum. Furthermore, it demonstrates a pathway to additive manufacturing (3D printing) of nanocrystalline copper-tantalum. Additive manufacturing of thermodynamically stable nanocrystalline metals is attractive because it enables maximum flexibility and efficiency in the use of these unique materials.

  19. High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

    2011-09-16

    A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

  20. Strain-induced grain growth of cryomilled nanocrystalline Al in trimodal composites during forging

    International Nuclear Information System (INIS)

    Yao, B.; Simkin, B.; Majumdar, B.; Smith, C.; Bergh, M. van den; Cho, K.; Sohn, Y.H.

    2012-01-01

    Highlights: ► Grain growth of cryomilled nanocrystalline aluminum during hot forging. ► Use of hollow cone dark field imaging technique in TEM for grain size measurement. ► Grain growth model of strain, strain rate and temperature for forging optimization. - Abstract: Grain growth of nanocrystalline aluminum ( nc Al) in trimodal Al metal-matrix-composites (MMCs) during hot forging was investigated. The nc Al phase formed through cryomilling of inert gas-atomized powders in liquid nitrogen has an average grain size down to 21 nm, exhibits excellent thermal stability. However, substantial grain growth of nc Al up to 63 nm was observed when the Al MMCs were thermo-mechanically processed even at relatively low temperatures. Grain growth of the cryomilled nc Al phase in trimodal Al MMCs after hot forging was documented with respect to temperature ranging from 175 °C to 287 °C, true strain ranging from 0.4 to 1.35 and strain rate ranging from 0.1 to 0.5 s −1 . Hollow cone dark field imaging technique was employed to provide statistically confident measurements of nc Al grain size that ranged from 21 to 63 nm. An increase in forging temperature and an increase in true strain were correlated with an increase in grain size of nc Al. Results were correlated to devise a phenomenological grain growth model for forging that takes strain, strain rate and temperature into consideration. Activation energy for the grain growth during thermo-mechanical hot-forging was determined to be 35 kJ/mol, approximately a quarter of activation energy for bulk diffusion of Al and a half of activation energy for static recrystallization.

  1. Ion nitridation - physical and technological aspects

    International Nuclear Information System (INIS)

    Elbern, A.W.

    1980-01-01

    Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

  2. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  3. Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

    Science.gov (United States)

    Baumgartner, H. R.

    1978-01-01

    Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

  4. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  5. Microhardness and microplasticity of zirconium nitride

    International Nuclear Information System (INIS)

    Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

    1978-01-01

    To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

  6. Microstructure and tensile properties of bulk nanostructured aluminum/graphene composites prepared via cryomilling

    Energy Technology Data Exchange (ETDEWEB)

    Li, J.L., E-mail: ljlhpu123@163.com; Xiong, Y.C.; Wang, X.D.; Yan, S.J.; Yang, C.; He, W.W.; Chen, J.Z.; Wang, S.Q.; Zhang, X.Y.; Dai, S.L.

    2015-02-25

    In order to develop high strength metal–matrix composites with acceptable ductility, bulk nanostructured aluminum–matrix composites reinforced with graphene nanoflakes were fabricated by cryomilling and hot extrusion processes. Microstructure and mechanical properties were characterized and determined using transmission electron microscopy, electron dispersion spectroscopy, as well as static tensile tests. The results show that, with an addition of only 0.5 wt% graphene nanoflakes, the bulk nanostructured aluminum/graphene composite exhibited increased strength and unsubdued ductility over pure aluminum. Besides, the mechanical properties of the composites with higher content of graphene nanoflakes were also measured and investigated. Above 1.0 wt% of graphene nanoflakes, however, this strengthening effect sharply dropped due to the clustering of graphene nanoflakes. Furthermore, the optimal addition of graphene nanoflakes into the nanocrystalline aluminum matrix was calculated and discussed.

  7. Effect of plasma nitriding on electrodeposited Ni–Al composite coating

    DEFF Research Database (Denmark)

    Daemi, N.; Mahboubi, F.; Alimadadi, Hossein

    2011-01-01

    In this study plasma nitriding is applied on nickel–aluminum composite coating, deposited on steel substrate. Ni–Al composite layers were fabricated by electro-deposition process in Watt’s bath containing Al particles. Electrodeposited specimens were subjected to plasma atmosphere comprising of N2......–20% H2, at 500°C, for 5h. The surface morphology investigated, using a scanning electron microscope (SEM) and the surface roughness was measured by use of contact method. Chemical composition was analyzed by X-ray fluorescence spectroscopy and formation of AlN phase was confirmed by X-ray diffraction....... The corrosion resistance of composite coatings was measured by potentiodynamic polarization in 3.5% NaCl solution. The obtained results show that plasma nitriding process leads to an increase in microhardness and corrosion resistance, simultaneously....

  8. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  9. Microencapsulation of silicon nitride particles with yttria and yttria-alumina precursors

    International Nuclear Information System (INIS)

    Garg, A.K.; De Jonghe, L.C.

    1990-01-01

    Procedures are described to deposit uniform layers of yttria and yttria-alumina precursors on fine powders and whiskers of silicon nitride. The coatings were produced by aging at elevated temperatures aqueous systems containing the silicon nitride core particles, yttrium and aluminum nitrates, and urea. Optimum concentrations of the core particles, in relation to the reactants, were established to promote surface deposition of the oxide precursors. Polymeric dispersants were used effectively to prevent agglomeration of the solids during the microencapsulation process. The morphology of the powders was characterized using scanning and transmission electron microscopy. The mechanisms for the formation of the coated layers are discussed. A description is provided that allows qualitative assessment of the experimental factors that determine microencapsulation by a slurry method

  10. Nitride alloy layer formation of duplex stainless steel using nitriding process

    Science.gov (United States)

    Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

    2018-01-01

    Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

  11. Magnetic behavior of nanocrystalline nickel ferrite

    International Nuclear Information System (INIS)

    Nathani, H.; Gubbala, S.; Misra, R.D.K.

    2005-01-01

    In the previous papers [R.D.K. Misra, A. Kale, R.S. Srivatsava, O. Senkov, Mater. Sci. Technol. 19 (2003) 826; R.D.K. Misra, A. Kale, B. Hooi, J.Th. DeHosson, Mater. Sci. Technol. 19 (2003) 1617; A. Kale, S. Gubbala, R.D.K. Misra, J. Magn. Magn. Mater. 277 (2004) 350; S. Gubbala, H. Nathani, K. Koizol, R.D.K. Misra, Phys. B 348 (2004) 317; R.D.K. Misra, S. Gubbala, A. Kale, W.F. Egelhoff, Mater. Sci. Eng. B. 111 (2004) 164], we reported the synthesis, structural characterization and magnetic behavior of nanocrystalline ferrites of inverse and mixed spinel structure made by reverse micelle technique that enabled a narrow particle size distribution to be obtained. In the present paper, the reverse micelle approach has been extended to synthesize nanocrystalline ferrites with varying surface roughness of 8-18 A (the surface roughness was measured by atomic force microscopy) and the magnetic behavior studied by SQUID magnetometer. Two different kinds of measurement were performed: (a) zero-field cooling (ZFC) and field cooling (FC) magnetization versus temperature measurements and (b) magnetization as a function of applied field. The analysis of magnetic measurement suggests significant influence of surface roughness of particles on the magnetic behavior. While the superparamagnetic behavior is retained by the nanocrystalline ferrites of different surface roughness at 300 K, the hysteresis loop at 2 K becomes non-squared and the coercivity increases with increase in surface roughness. This behavior is discussed in terms of broken bonds and degree of surface spin disorder

  12. Ternary nitrides for hydrogen storage: Li-B-N, Li-Al-N and Li-Ga-N systems

    International Nuclear Information System (INIS)

    Langmi, Henrietta W.; McGrady, G. Sean

    2008-01-01

    This paper reports an investigation of hydrogen storage performance of ternary nitrides based on lithium and the Group 13 elements boron, aluminum and gallium. These were prepared by ball milling Li 3 N together with the appropriate Group 13 nitride-BN, AlN or GaN. Powder X-ray diffraction of the products revealed that the ternary nitrides obtained are not the known Li 3 BN 2 , Li 3 AlN 2 and Li 3 GaN 2 phases. At 260 deg. C and 30 bar hydrogen pressure, the Li-Al-N ternary system initially absorbed 3.7 wt.% hydrogen, although this is not fully reversible. We observed, for the first time, hydrogen uptake by a pristine ternary nitride of Li and Al synthesized from the binary nitrides of the metals. While the Li-Ga-N ternary system also stored a significant amount of hydrogen, the storage capacity for the Li-B-N system was near zero. The hydrogenation reaction is believed to be similar to that of Li 3 N, and the enthalpies of hydrogen absorption for Li-Al-N and Li-Ga-N provide evidence that AlN and GaN, as well as the ball milling process, play a significant role in altering the thermodynamics of Li 3 N

  13. Improved design and durability of aluminum die casting horizontal shot sleeves

    Science.gov (United States)

    Birceanu, Sebastian

    The design and performance of shot sleeves is critical in meeting the engineering requirements of aluminum die cast parts. Improvement in shot sleeve materials have a major impact on dimensional stability, reproducibility and quality of the product. This investigation was undertaken in order to improve the life of aluminum die casting horizontal shot sleeves. Preliminary pin tests were run to evaluate the soldering, wash-out and thermal fatigue behavior of commercially available materials and coatings. An experimental rig was designed and constructed for shot sleeve configuration evaluation. Fabrication and testing of experimental shot sleeves was based upon preliminary results and manufacturing costs. Three shot sleeve designs and materials were compared to a reference nitrided H13 sleeve. Nitrided H13 is the preferred material for aluminum die casting shot sleeves because of wear resistance, strength and relative good soldering and wash-out resistance. The study was directed towards damage evaluation on the area under the pouring hole. This area is the most susceptible to damage because of high temperatures and impingement of molten aluminum. The results of this study showed that tungsten and molybdenum had the least amount of soldering and wash-out damage, and the best thermal fatigue resistance. Low solubility in molten aluminum and stability of intermetallic layers are main factors that determine the soldering and wash-out behavior. Thermal conductivity and thermal expansion coefficient directly influence thermal fatigue behavior. TiAlN nanolayered coating was chosen as the material with the best damage resistance among several commercial PVD coatings, because of relatively large thickness and simple deposition conditions. The results show that molybdenum thermal sprayed coating provided the best protection against damage under the pouring hole. Improved bonding is however required for life extension of the coating. TiAlN PVD coating applied on H13 nitrided

  14. Transparent nanocrystalline diamond coatings and devices

    Science.gov (United States)

    Sumant, Anirudha V.; Khan, Adam

    2017-08-22

    A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.

  15. Simulations of intergranular fracture in nanocrystalline molybdenum

    DEFF Research Database (Denmark)

    Frederiksen, Søren Lund; Jacobsen, Karsten Wedel; Schiøtz, Jakob

    2004-01-01

    Using molecular dynamics simulations we investigate the plastic deformation of nanocrystalline molybdenum with a grain size of 12 nm at high strain rates. The simulations are performed with an interatomic potential which is obtained through matching of atomic forces to a database generated...... with density-functional calculations. The simulations show the plastic deformation to involve both grain boundary processes and dislocation migration which in some cases lead to twin boundary formation. A large component of the strain is accommodated through the formation of cracks in the grain boundaries...

  16. Advances in aluminum anodizing

    Science.gov (United States)

    Dale, K. H.

    1969-01-01

    White anodize is applied to aluminum alloy surfaces by specific surface preparation, anodizing, pigmentation, and sealing techniques. The development techniques resulted in alloys, which are used in space vehicles, with good reflectance values and excellent corrosive resistance.

  17. Corrosion Inhibitors for Aluminum.

    Science.gov (United States)

    Muller, Bodo

    1995-01-01

    Describes a simple and reliable test method used to investigate the corrosion-inhibiting effects of various chelating agents on aluminum pigments in aqueous alkaline media. The experiments that are presented require no complicated or expensive electronic equipment. (DDR)

  18. Method of preparation of uranium nitride

    Science.gov (United States)

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  19. Atomic Resolution Microscopy of Nitrides in Steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson

    2014-01-01

    MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

  20. Low temperature anodic bonding to silicon nitride

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Bouaidat, Salim

    2000-01-01

    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

  1. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  2. Corrosion Protection of Aluminum

    Science.gov (United States)

    Dalrymple, R. S.; Nelson, W. B.

    1963-07-01

    Treatment of aluminum-base metal surfaces in an autoclave with an aqueous chromic acid solution of 0.5 to 3% by weight and of pH below 2 for 20 to 50 hrs at 160 to 180 deg C produces an extremely corrosion-resistant aluminum oxidechromium film on the surface. A chromic acid concentration of 1 to 2% and a pH of about 1 are preferred.

  3. Alloy Effects on the Gas Nitriding Process

    Science.gov (United States)

    Yang, M.; Sisson, R. D.

    2014-12-01

    Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

  4. New routes to nitrogen-rich transition metal nitrides: Synthesis of novel polymorphs of Hf3N4

    Science.gov (United States)

    Salamat, Ashkan; Hector, A.; Gray, B.; Kimber, S.; Bouvier, P.; McMillan, P.

    2013-06-01

    One of the most obvious features of transition metal nitride chemistry is that the maximum formal oxidation state of the metal is rarely as high as in the corresponding oxides or fluorides. Much of the interest in the high oxidation phases stems from the desire to identify the next generation of photocatalytic materials with tuneable bandgaps. Experiments in the laser heated diamond anvil cell (LHDAC) between the direct reaction of metals and nitrogen have previously produced a number of important new main group nitride phases. This technique has also demonstrated its potential for formation of new nitrogen-rich transition metal nitride phases. Alternative methods with the development of ``soft'' routes to new phases with high nitrogen content also offer the possibility of obtaining metastable phases through topotactic conversions. Using LHDAC in situ with synchrotron angle dispersive diffraction techniques we have crystallised at high pressures and temperatures two novel polymorphs of Hf3N4. Starting with an amide-derived nanocrystalline Hf3N4 sample we have identified a novel tetragonal (I4/ m) polymorph at 15 GPa and 1500K and a second high pressure orthorhombic (Pnma) polymorph at 30 GPa and 2000 K. This study demonstrates that the combination of precursor-based synthesis and high-pressure crystallization could be very productive in synthesis of such nitrogen-rich phases.

  5. Microhardness studies of nanocrystalline lead molybdate

    International Nuclear Information System (INIS)

    Anandakumar, V.M.; Abdul Khadar, M.

    2009-01-01

    Nanocrystalline lead molybdate (PbMoO 4 ) of four different grain sizes were synthesized through chemical precipitation technique and the grain sizes and crystal structure are determined using the broadening of X-ray diffraction patterns and transmission electron microscopy. The microhardness of nanocrystalline lead molybdate (PbMoO 4 ) with different grain sizes were measured using a Vicker's microhardness tester for various applied loads ranging from 0.049 to 1.96 N. The microhardness values showed significant indentation size effect at low indentation loads. The proportional specimen resistance model put forward by Li and Bradt and energy balance model put forward by Gong and Li were used to analyze the behaviour of measured microhardness values under different indentation loads. The microhardness data obtained for samples of different grain sizes showed grain size dependent strengthening obeying normal Hall-Petch relation. The dependence of compacting pressure and annealing temperature on microhardness of the nanostructured sample with grain size of ∼18 nm were also studied. The samples showed significant increase in microhardness values as the compacting pressure and annealing time were increased. The variation of microhardness of the material with pressure of pelletization and annealing time are discussed in the light of change of pore size distribution of the samples.

  6. Grain growth studies on nanocrystalline Ni powder

    International Nuclear Information System (INIS)

    Rane, G.K.; Welzel, U.; Mittemeijer, E.J.

    2012-01-01

    The microstructure of nanocrystalline Ni powder produced by ball-milling and its thermal stability were investigated by applying different methods of X-ray diffraction line-profile analysis: single-line analysis, whole powder-pattern modelling and the (modified) Warren–Averbach method were employed. The kinetics of grain growth were investigated by both ex-situ and in-situ X-ray diffraction measurements. With increasing milling time, the grain-size reduction is accompanied by a considerable narrowing of the size distribution and an increase in the microstrain. Upon annealing, initial, rapid grain growth occurs, accompanied by the (almost complete) annihilation of microstrain. For longer annealing times, the grain-growth kinetics depend on the initial microstructure: a smaller microstrain with a broad grain-size distribution leads to linear grain growth, followed by parabolic grain growth, whereas a larger microstrain with a narrow grain-size distribution leads to incessant linear grain growth. These effects have been shown to be incompatible with grain-boundary curvature driven growth. The observed kinetics are ascribed to the role of excess free volume at the grain boundaries of nanocrystalline material and the prevalence of an “abnormal grain-growth” mechanism.

  7. Solvothermal synthesis: a new route for preparing nitrides

    CERN Document Server

    Demazeau, G; Denis, A; Largeteau, A

    2002-01-01

    Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

  8. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zajtsev, A.M.

    1985-01-01

    Three optically active defects are detected in mono- and polycrystal cubic boron nitride (β-BN). Analysis of intensity of temperature dependences, halfwidth and energy shift of 1.76 eV narrow phononless line (center GC-1) makes it possible to interprete the observed cathodoluminescence spectra an optical analog of the Moessbaner effect. Comparison of the obtained results with the known data for diamond monocrystals makes it possible to suggest that the detected center GC-1 is a nitrogen vacancy . The conclusion, concerning the Moessbauer optical spectra application, is made to analyze structural perfection of β-BN crystal lattice

  9. Surface analysis in steel nitrides by using Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Figueiredo, R.S. de.

    1991-07-01

    The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

  10. Simple process to fabricate nitride alloy powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

    2013-01-01

    Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

  11. Surface nanocrystallization by surface mechanical attrition treatment and its effect on structure and properties of plasma nitrided AISI 321 stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Lin Yimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China) and Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China)]. E-mail: linyimin_2001@yahoo.com.cn; Lu Jian [LASMIS, University of Technology of Troyes, 10000 Troyes (France); Wang Liping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Xu Tao [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China); Xue Qunji [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China)]. E-mail: qjxue@ns.lzb.ac.cn

    2006-12-15

    A plastic deformation surface layer with nanocrystalline grains was produced on AISI 321 austenitic stainless steel by means of surface mechanical attrition treatment (SMAT). Low-temperature nitriding of SMAT and un-SMAT AISI 321 stainless steel was carried out in pulsed-DC glow discharge. The effect of SMAT pretreatment on the microstructure and properties of the stainless steel were investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Vickers hardness tester and UMT-2MT tribometer. The results show that the plasma nitriding of AISI 321 steel can be enhanced considerably by means of SMAT process before nitriding, and a much thicker nitrogen diffusion layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples. In addition, the wear resistance and load capacity of the nitrided layers on the SMAT samples was much higher than that of the un-SMAT samples due to the thicker S phase case and the gradient nitrogen diffusion layer.

  12. Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

    DEFF Research Database (Denmark)

    Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

    2015-01-01

    The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

  13. Aluminum industry options paper

    International Nuclear Information System (INIS)

    1999-10-01

    In 1990, Canada's producers of aluminum (third largest in the world) emitted 10 million tonnes of carbon dioxide and equivalent, corresponding to 6.4 tonnes of greenhouse gas intensity per tonne of aluminum. In 2000, the projection is that on a business-as-usual (BAU) basis Canadian producers now producing 60 per cent more aluminum than in 1990, will emit 10.7 million tonnes of carbon dioxide and equivalent, corresponding to a GHG intensity of 4.2 tonnes per tonne of aluminum. This improvement is due to production being based largely on hydro-electricity, and partly because in general, Canadian plants are modern, with technology that is relatively GHG-friendly. The Aluminum Association of Canada estimates that based on anticipated production, and under a BAU scenario, GHG emissions from aluminum production will rise by 18 per cent by 2010 and by 30 per cent by 2020. GHG emissions could be reduced below the BAU forecast first, by new control and monitoring systems at some operations at a cost of $4.5 to 7.5 million per smelter. These systems could reduce carbon dioxide equivalent emissions by 0.8 million tonnes per year. A second alternative would require installation of breaker feeders which would further reduce perfluorocarbon (PFC) emissions by 0.9 million tonnes of carbon dioxide equivalent. Cost of the breakers feeders would be in the order of $200 million per smelter. The third option calls for the the shutting down of some of the smelters with older technology by 2015. In this scenario GHG emissions would be reduced by 2010 by 0.8 million tonnes per year of carbon dioxide equivalent. However, the cost in this case would be about $1.36 billion. The industry would support measures that would encourage the first two sets of actions, which would produce GHG emissions from aluminum production in Canada of about 10.2 million tonnes per year of carbon dioxide equivalent, or about two per cent above 1990 levels with double the aluminum production of 1990. Credit for

  14. Electrochemical passivation behaviour of nanocrystalline Fe80Si20 ...

    Indian Academy of Sciences (India)

    Abstract. Passivation behaviour of nanocrystalline coating (Fe80Si20) obtained by in situ mechanical alloying route .... is controlled by the iron oxide film in case of alloys with ..... the surface is covered, thus, producing effective protection of.

  15. Optimization of nanocrystalline γ-alumina coating for direct spray ...

    Indian Academy of Sciences (India)

    Modifications of the partial gas percentage influences the optical properties and composition ... O2 flow in the Ar ambient and substrate temperature on struc- ture and properties of ..... nism to explain mechanical behaviour of nanocrystalline.

  16. Tailoring and patterning the grain size of nanocrystalline alloys

    International Nuclear Information System (INIS)

    Detor, Andrew J.; Schuh, Christopher A.

    2007-01-01

    Nanocrystalline alloys that exhibit grain boundary segregation can access thermodynamically stable or metastable states with the average grain size dictated by the alloying addition. Here we consider nanocrystalline Ni-W alloys and demonstrate that the W content controls the grain size over a very broad range: ∼2-140 nm as compared with ∼2-20 nm in previous work on strongly segregating systems. This trend is attributed to a relatively weak tendency for W segregation to the grain boundaries. Based upon this observation, we introduce a new synthesis technique allowing for precise composition control during the electrodeposition of Ni-W alloys, which, in turn, leads to precise control of the nanocrystalline grain size. This technique offers new possibilities for understanding the structure-property relationships of nanocrystalline solids, such as the breakdown of Hall-Petch strength scaling, and also opens the door to a new class of customizable materials incorporating patterned nanostructures

  17. Amorphous and nanocrystalline materials preparation, properties, and applications

    CERN Document Server

    Inoue, A

    2001-01-01

    Amorphous and nanocrystalline materials are a class of their own. Their properties are quite different to those of the corresponding crystalline materials. This book gives systematic insight into their physical properties, structure, behaviour, and design for special advanced applications.

  18. Protein-modified nanocrystalline diamond thin films for biosensor applications.

    Science.gov (United States)

    Härtl, Andreas; Schmich, Evelyn; Garrido, Jose A; Hernando, Jorge; Catharino, Silvia C R; Walter, Stefan; Feulner, Peter; Kromka, Alexander; Steinmüller, Doris; Stutzmann, Martin

    2004-10-01

    Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

  19. Effect of nanocrystalline surface of substrate on microstructure and ...

    Indian Academy of Sciences (India)

    surface layers or bulk nanocrystalline metals and alloys more effectively. ... severe plastic deformation on surface layers of bulk met- als at high strains and strain rates. .... scanning electron microscopy (SEM) (Zeiss, model: Sigma. VP), energy ...

  20. A multilayer innovative solution to improve the adhesion of nanocrystalline diamond coatings

    Energy Technology Data Exchange (ETDEWEB)

    Poulon-Quintin, A., E-mail: poulon@icmcb-bordeaux.cnrs.fr [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Faure, C.; Teulé-Gay, L.; Manaud, J.P. [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France)

    2015-03-15

    Highlights: • Improvement of the NCD adhesion on WC-12%Co substrates for tooling applications using a multi-interlayer additional system. • Reduction of the graphite layer thickness and continuity at the interface with the diamond. • Transmission electron microscopy study for a better understanding of the diffusion phenomena occurring at the interfaces. - Abstract: Nano-crystalline diamond (NCD) films grown under negative biased substrates by chemical vapor deposition (CVD) are widely used as surface overlay coating onto cermet WC-Co cutting tools to get better performances. To improve the diamond adhesion to the cermet substrate, suitable multi-layer systems have been added. They are composed of a cobalt diffusion barrier close to the substrate (single and sequenced nitrides layers) coated with a nucleation extra layer to improve the nucleus density of diamond during CVD processing. For all systems, before and after diamond deposition, transmission electron microscopy (TEM) has been performed for a better understanding of the diffusion phenomena occurring at the interfaces and to evaluate the presence of graphitic species at the interface with the diamond. Innovative multilayer system dedicated to the regulation of cobalt diffusion coated with a bilayer system optimized for the carbon diffusion control, is shown as an efficient solution to significantly reduce the graphite layer formation at the interface with the diamond down to 10 nm thick and to increase the adhesion of NCD diamond layer as scratch-tests confirm.

  1. New Routes to Lanthanide and Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

    2009-06-15

    The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

  2. Mesoporous aluminum phosphite

    International Nuclear Information System (INIS)

    El Haskouri, Jamal; Perez-Cabero, Monica; Guillem, Carmen; Latorre, Julio; Beltran, Aurelio; Beltran, Daniel; Amoros, Pedro

    2009-01-01

    High surface area pure mesoporous aluminum-phosphorus oxide-based derivatives have been synthesized through an S + I - surfactant-assisted cooperative mechanism by means of a one-pot preparative procedure from aqueous solution and starting from aluminum atrane complexes and phosphoric and/or phosphorous acids. A soft chemical extraction procedure allows opening the pore system of the parent as-prepared materials by exchanging the surfactant without mesostructure collapse. The nature of the pore wall can be modulated from mesoporous aluminum phosphate (ALPO) up to total incorporation of phosphite entities (mesoporous aluminum phosphite), which results in a gradual evolution of the acidic properties of the final materials. While phosphate groups in ALPO act as network building blocks (bridging Al atoms), the phosphite entities become basically attached to the pore surface, what gives practically empty channels. The mesoporous nature of the final materials is confirmed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and N 2 adsorption-desorption isotherms. The materials present regular unimodal pore systems whose order decreases as the phosphite content increases. NMR spectroscopic results confirm the incorporation of oxo-phosphorus entities to the framework of these materials and also provide us useful information concerning the mechanism through which they are formed. - Abstract: TEM image of the mesoporous aluminum phosphite showing the hexagonal disordered pore array that is generated by using surfactant micelles as template. Also a scheme emphasizing the presence of an alumina-rich core and an ALPO-like pore surface is presented.

  3. Electrochemistry of Inorganic Nanocrystalline Electrode Materials for Lithium Batteries

    Directory of Open Access Journals (Sweden)

    C. W. Kwon

    2003-01-01

    much different from that of traditional crystalline ones because of their significant ‘surface effects’. In connection with that, the nanocrystalline cathode materials are reported to have an enhanced electrochemical activity when the first significative electrochemical step is insertion of Li ions (discharge process. The “electrochemical grafting” concept will be given as a plausible explanation. As illustrative examples, electrochemical behaviors of nanocrystalline manganese oxydes are presented.

  4. Reversal of exchange bias in nanocrystalline antiferromagnetic-ferromagnetic bilayers

    International Nuclear Information System (INIS)

    Prados, C; Pina, E; Hernando, A; Montone, A

    2002-01-01

    The sign of the exchange bias in field cooled nanocrystalline antiferromagnetic-ferromagnetic bilayers (Co-O and Ni-O/permalloy) is reversed at temperatures approaching the antiferromagnetic (AFM) blocking temperature. A similar phenomenon is observed after magnetic training processes at similar temperatures. These effects can be explained assuming that the boundaries of nanocrystalline grains in AFM layers exhibit lower transition temperatures than grain cores

  5. Residual Stress Induced by Nitriding and Nitrocarburizing

    DEFF Research Database (Denmark)

    Somers, Marcel A.J.

    2005-01-01

    The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

  6. Nanocrystalline Steels’ Resistance to Hydrogen Embrittlement

    Directory of Open Access Journals (Sweden)

    Skołek E.

    2015-04-01

    Full Text Available The aim of this study is to determine the susceptibility to hydrogen embrittlement in X37CrMoV5-1 steel with two different microstructures: a nanocrystalline carbide-free bainite and tempered martensite. The nanobainitic structure was obtained by austempering at the bainitic transformation zone. It was found, that after hydrogen charging, both kinds of microstructure exhibit increased yield strength and strong decrease in ductility. It has been however shown that the resistance to hydrogen embrittlement of X37CrMoV5-1 steel with nanobainitic structure is higher as compared to the tempered martensite. After hydrogen charging the ductility of austempered steel is slightly higher than in case of quenched and tempered (Q&T steel. This effect was interpreted as a result of phase composition formed after different heat treatments.

  7. Limitation of biocompatibility of hydrated nanocrystalline hydroxyapatite

    Science.gov (United States)

    Minaychev, V. V.; Teleshev, A. T.; Gorshenev, V. N.; Yakovleva, M. A.; Fomichev, V. A.; Pankratov, A. S.; Menshikh, K. A.; Fadeev, R. S.; Fadeeva, I. S.; Senotov, A. S.; Kobyakova, M. I.; Yurasova, Yu B.; Akatov, V. S.

    2018-04-01

    Nanostructured hydroxyapatite (HA) in the form of hydrated paste is considered to be a promising material for a minor-invasive surgical curing of bone tissue injure. However questions about adhesion of cells on this material and its biocompatibility still remain. In this study biocompatibility of paste-formed nanosized HA (nano-HA) by in vitro methods is investigated. Nano-HA (particles sized about 20 nm) was synthesized under conditions of mechano-acoustic activation of an aqueous reaction mixture of ammonium hydrophosphate and calcium nitrate. It was ascertained that nanocrystalline paste was not cytotoxic although limitation of adhesion, spreading and growth of the cells on its surface was revealed. The results obtained point on the need of modification of hydrated nano-HA in the aims of increasing its biocompatibility and osteoplastic potential.

  8. Stability of nanocrystalline electrochemically deposited layers

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2009-01-01

    have different microstructure and properties compared to bulk materials and the thermodynamic non-equilibrium state of as-deposited layers frequently results in changes of the microstructure as a function of time and/or temperature. The evolving microstructure affects the functionality and reliability......The technological demand for manufacturing components with complex geometries of micrometer or sub-micrometer dimensions and ambitions for ongoing miniaturization have attracted particular attention to electrochemical deposition methods. Thin layers of electrochemically deposited metals and alloys...... of electrodeposited components, which can be beneficial, as for the electrical conductivity of copper interconnect lines, or detrimental, as for reduced strength of nickel in MEMS applications. The present work reports on in-situ studies of the microstructure stability of as-deposited nanocrystalline Cu-, Ag- and Ni...

  9. Application Potential of Nanocrystalline Ribbons Still Pending

    Science.gov (United States)

    Butvin, Pavol; Butvinová, Beata; Švec, Peter; Sitek, Jozef

    2010-09-01

    Nanocrystalline soft-magnetic ribbons promised a wide-spread practical use when introduced at the beginning of nineties. After 20 years of extensive research there are still unclear material problems which are thought to be the principal reason why these materials show but marginal use. Poorly controllable magnetic anisotropy due to spontaneous intrinsic macroscopic stress that comes from an inevitable heterogeneity of the ribbon materials is pointed to in this work. Certain stress-based mechanisms are shown to induce the unintended anisotropy in the already familiar Finemets as well as in the newer Hitperms. Hysteresis loops, domain structure and power loss is used to reveal the anisotropy consequences and particular connected but still unanswered questions are pinpointed.

  10. Reinforced plastics and aerogels by nanocrystalline cellulose

    Energy Technology Data Exchange (ETDEWEB)

    Leung, Alfred C. W.; Lam, Edmond; Chong, Jonathan; Hrapovic, Sabahudin; Luong, John H. T., E-mail: john.luong@cnrc-nrc.gc.ca [National Research Council Canada (Canada)

    2013-05-15

    Nanocrystalline cellulose (NCC), a rigid rod-like nanoscale material, can be produced from cellulosic biomass in powder, liquid, or gel forms by acid and chemical hydrolysis. Owing to its unique and exceptional physicochemical properties, the incorporation of a small amount of NCC into plastic enhances the mechanical strength of the latter by several orders of magnitudes. Carbohydrate-based NCC poses no serious environmental concerns, providing further impetus for the development and applications of this green and renewable biomaterial to fabricate lightweight and biodegradable composites and aerogels. Surface functionalization of NCC remains the main focus of NCC research to tailor its properties for dispersion in hydrophilic or hydrophobic media. It is of uttermost importance to develop tools and protocols for imaging of NCC in a complex matrix and quantify its reinforcement effect.

  11. Nanocrystalline diamond coatings for mechanical seals applications.

    Science.gov (United States)

    Santos, J A; Neto, V F; Ruch, D; Grácio, J

    2012-08-01

    A mechanical seal is a type of seal used in rotating equipment, such as pumps and compressors. It consists of a mechanism that assists the connection of the rotating shaft to the housings of the equipments, preventing leakage or avoiding contamination. A common cause of failure of these devices is end face wear out, thus the use of a hard, smooth and wear resistant coating such as nanocrystalline diamond would be of great importance to improve their working performance and increase their lifetime. In this paper, different diamond coatings were deposited by the HFCVD process, using different deposition conditions. Additionally, the as-grown films were characterized for, quality, morphology and microstructure using scanning electron microscopy (SEM) and Raman spectroscopy. The topography and the roughness of the films were characterized by atomic force microscopy (AFM).

  12. Arsenic removal by magnetic nanocrystalline barium hexaferrite

    International Nuclear Information System (INIS)

    Patel, Hasmukh A.; Byun, Jeehye; Yavuz, Cafer T.

    2012-01-01

    Nanoscale magnetite (Fe 3 O 4 ) ( 12 O 19 , BHF) is a well-known permanent magnet (i.e., fridge magnets) and attractive due to its low cost in making large quantities. BHF offers a viable alternative to magnetite nanocrystals for arsenic removal since it features surfaces similar to iron oxides but with much enhanced magnetism. Herein, we employ BHF nanocrystalline materials for the first time in arsenic removal from wastewater. Our results show better (75 %) arsenic removal than magnetite of the similar sizes. The BHF nanoparticles, 6.06 ± 0.52 nm synthesized by thermolysis method at 320 °C do not show hexagonal phase, however, subsequent annealing at 750 °C produced pure hexagonal BHF in >200 nm assemblies. By using BHF, we demonstrate that nanoparticle removal is more efficient and fixed bed type cartridge applications are more possible.

  13. Regeneration of aluminum hydride

    Science.gov (United States)

    Graetz, Jason Allan; Reilly, James J; Wegrzyn, James E

    2012-09-18

    The present invention provides methods and materials for the formation of hydrogen storage alanes, AlH.sub.x, where x is greater than 0 and less than or equal to 6 at reduced H.sub.2 pressures and temperatures. The methods rely upon reduction of the change in free energy of the reaction between aluminum and molecular H.sub.2. The change in free energy is reduced by lowering the entropy change during the reaction by providing aluminum in a state of high entropy, and by increasing the magnitude of the change in enthalpy of the reaction or combinations thereof.

  14. Regeneration of aluminum hydride

    Science.gov (United States)

    Graetz, Jason Allan; Reilly, James J.

    2009-04-21

    The present invention provides methods and materials for the formation of hydrogen storage alanes, AlH.sub.x, where x is greater than 0 and less than or equal to 6 at reduced H.sub.2 pressures and temperatures. The methods rely upon reduction of the change in free energy of the reaction between aluminum and molecular H.sub.2. The change in free energy is reduced by lowering the entropy change during the reaction by providing aluminum in a state of high entropy, by increasing the magnitude of the change in enthalpy of the reaction or combinations thereof.

  15. Functionalization of nanocrystalline diamond films with phthalocyanines

    Energy Technology Data Exchange (ETDEWEB)

    Petkov, Christo [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Reintanz, Philipp M. [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Kulisch, Wilhelm [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Degenhardt, Anna Katharina [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Weidner, Tobias [Max Planck Institute for Polymer Research, Mainz (Germany); Baio, Joe E. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR (United States); Merz, Rolf; Kopnarski, Michael [Institut für Oberflächen- und Schichtanalytik (IFOS), Kaiserslautern (Germany); Siemeling, Ulrich [Institute of Chemistry, Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Reithmaier, Johann Peter [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Popov, Cyril, E-mail: popov@ina.uni-kassel.de [Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany)

    2016-08-30

    Highlights: • Grafting of phthalocyanines on nanocrystalline diamond films with different terminations. • Pc with different central atoms and side chains synthesized and characterized. • Attachment of Pc on H- and O-terminated NCD studied by XPS and NEXAFS spectroscopy. • Orientation order of phthalocyanine molecules on NCD surface. - Abstract: Phthalocyanine (Pc) derivatives containing different central metal atoms (Mn, Cu, Ti) and different peripheral chains were synthesized and comprehensively characterized. Their interaction with nanocrystalline diamond (NCD) films, as-grown by hot-filament chemical vapor deposition or after their modification with oxygen plasma to exchange the hydrogen termination with oxygen-containing groups, was studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The elemental composition as determined by XPS showed that the Pc were grafted on both as-grown and O-terminated NCD. Mn, Cu and Ti were detected together with N stemming from the Pc ring and S in case of the Ti-Pc from the peripheral ligands. The results for the elemental surface composition and the detailed study of the N 1s, S 2p and O 1s core spectra revealed that Ti-Pc grafted better on as-grown NCD but Cu-Pc and Mn-Pc on O-terminated films. Samples of Mn-Pc on as-grown and O-terminated NCD were further investigated by NEXAFS spectroscopy. The results showed ordering of the grafted molecules, laying flat on the H-terminated NCD surface while only the macrocycles were oriented parallel to the O-terminated surface with the peripheral chains perpendicular to it.

  16. Aluminum Hydroxide and Magnesium Hydroxide

    Science.gov (United States)

    Aluminum Hydroxide, Magnesium Hydroxide are antacids used together to relieve heartburn, acid indigestion, and upset stomach. They ... They combine with stomach acid and neutralize it. Aluminum Hydroxide, Magnesium Hydroxide are available without a prescription. ...

  17. Preparation of nanocrystalline VN by the melamine reduction of V{sub 2}O{sub 5} xerogel and its supercapacitive behavior

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Fukui [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); He Chun [School of Environmental Science and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Shu Dong, E-mail: dshu@scnu.edu.cn [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Base of Production, Education and Research on Energy Storage and Power Battery of Guangdong Higher Education Institutes, Guangzhou 510006 (China); Key Laboratory of Electrochemical Technology on Energy Storage and Power Generation of Guangdong Higher Education Institutes, South China Normal University, Guangzhou 510006 (China); Chen Hongyu, E-mail: hychen@scnu.edu.cn [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Base of Production, Education and Research on Energy Storage and Power Battery of Guangdong Higher Education Institutes, Guangzhou 510006 (China); Key Laboratory of Electrochemical Technology on Energy Storage and Power Generation of Guangdong Higher Education Institutes, South China Normal University, Guangzhou 510006 (China); Zhang Jie; Tang Shaoqing; Finlow, David E. [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Organic nitridizing agent was employed for preparation of nanocrystalline VN. Black-Right-Pointing-Pointer The supercapacitive behavior of VN was studied by electrochemical method. Black-Right-Pointing-Pointer The supercapacitive behavior of VN was studied in three kinds of electrolyte. Black-Right-Pointing-Pointer The specific capacitance of VN was determined as 273 F g{sup -1} in 1.0 M KOH. Black-Right-Pointing-Pointer The supercapacitive mechanism and involved factor on capacitance were analyzed. - Abstract: An organic nitridizing reagent was employed in the preparation of nanocrystalline VN at 800 Degree-Sign C under a N{sub 2} atmosphere. The prepared VN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS), and its supercapacitive behavior was studied by cyclic voltammetry (CV) in three different types of aqueous electrolyte, 0.5 M H{sub 2}SO{sub 4}, 2.0 M NaNO{sub 3} and 1.0 M KOH. The XRD results indicate that prepared VN has a cubic structure with space group Fm3m and a lattice parameter of 4.139 Angstrom-Sign . The nanocrystalline structure of VN with a low degree of crystallinity was confirmed by TEM imaging. The presence of oxygen on the VN surface was detected by FTIR and XPS, and its molecular composition was determined to be VN{sub 1.02}O{sub 0.1}. The specific capacitances of nanocrystalline VN were determined to be 114, 45.7 and 273 F g{sup -1} in 0.5 M H{sub 2}SO{sub 4}, 2.0 M NaNO{sub 3} and 1.0 M KOH, respectively. Thus, the KOH solution was considered the best aqueous electrolyte for the capacitive performance of VN. The supercapacitive mechanism and the factor that influenced the specific capacitance are also analyzed in this paper.

  18. Structural, optical and thermal properties of nanoporous aluminum

    International Nuclear Information System (INIS)

    Ghrib, Taher

    2015-01-01

    Highlights: • A simple electrochemical technique is presented and used to manufacture a porous aluminum layer. • Manufactured pores of 40 nm diameter and 200 nm depth are filled by nanocrystal of silicon and graphite. • Dimensions of pores increase with the anodization current which ameliorate the optical and thermal properties. • A new thermal method is presented which permit to determine the pores density and the layer thickness. • All properties show that the manufactured material can be used with success in solar cells. - Abstract: In this work the structural, thermal and optical properties of porous aluminum thin film formed with various intensities of anodization current in sulfuric acid are highlighted. The obtained pores at the surface are filled by sprayed graphite and nanocrystalline silicon (nc-Si) thin films deposited by plasma enhancement chemical vapor deposition (PECVD) which the role is to improve its optical and thermal absorption giving a structure of an assembly of three different media such as deposited thin layer (graphite or silicon)/(porous aluminum layer filled with the deposited layer)/(Al sample). The effect of anodization current on the microstructure of porous aluminum and the effect of the deposited layer were systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM) and Raman spectroscopy. The thermal properties such as the thermal conductivity (K) and thermal diffusivity (D) are determined by the photothermal deflection (PTD) technique which is a non destructive technique. Based on this full characterization, it is demonstrated that the thermal and optical characteristics of these films are directly correlated to their micro-structural properties

  19. Electrically conductive anodized aluminum coatings

    Science.gov (United States)

    Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

    2001-01-01

    A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

  20. Surface modification of titanium by plasma nitriding

    Directory of Open Access Journals (Sweden)

    Kapczinski Myriam Pereira

    2003-01-01

    Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

  1. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1999-01-01

    As a prerequisite for predictability of properties obtained by a nitriding treatment of iron-based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present (even) the description of thermodynamic equilibrium...... of pure iron-nitrogen phases has not been achieved fully. It has been shown that taking into account ordering of nitrogen in the epsilon and gamma' iron-nitride phases, leads to an improved understanding of the Fe-N phase diagram. Although thermodynamics indicate the state the system strives for......, the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

  2. A phenomenological variational multiscale constitutive model for intergranular failure in nanocrystalline materials

    KAUST Repository

    Siddiq, A.; El Sayed, Tamer S.

    2013-01-01

    We present a variational multiscale constitutive model that accounts for intergranular failure in nanocrystalline fcc metals due to void growth and coalescence in the grain boundary region. Following previous work by the authors, a nanocrystalline

  3. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  4. Cathodoluminescence of cubic boron nitride

    International Nuclear Information System (INIS)

    Tkachev, V.D.; Shipilo, V.B.; Zaitsev, A.M.

    1985-01-01

    Three types of optically active defect were observed in single-crystal and polycrystalline cubic boron nitride (β-BN). An analysis of the temperature dependences of the intensity, half-width, and energy shift of a narrow zero-phonon line at 1.76 eV (GC-1 center) made it possible to interpret the observed cathodoluminescence spectra as an optical analog of the Moessbauer effect. A comparison of the results obtained in the present study with the available data on diamond single crystals made it possible to identify the observed GC-1 center as a nitrogen vacancy. It was concluded that optical Moessbauer-type spectra can be used to analyze structure defects in the crystal lattice of β-BN

  5. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  6. Fluxless aluminum brazing

    Science.gov (United States)

    Werner, W.J.

    1974-01-01

    This invention relates to a fluxless brazing alloy for use in forming brazed composites made from members of aluminum and its alloys. The brazing alloy consists of 35-55% Al, 10--20% Si, 25-60% Ge; 65-88% Al, 2-20% Si, 2--18% In; 65--80% Al, 15-- 25% Si, 5- 15% Y. (0fficial Gazette)

  7. Aluminum Corrosion and Turbidity

    International Nuclear Information System (INIS)

    Longtin, F.B.

    2003-01-01

    Aluminum corrosion and turbidity formation in reactors correlate with fuel sheath temperature. To further substantiate this correlation, discharged fuel elements from R-3, P-2 and K-2 cycles were examined for extent of corrosion and evidence of breaking off of the oxide film. This report discusses this study

  8. Aluminum concentration in hydrangeas

    International Nuclear Information System (INIS)

    Yanagawa, M.; Haruyama, Y.; Saito, M.

    2008-01-01

    We have been trying to measure concentration of aluminum in Ajisai, Hydrangea macrophylla for these days. But due to bad luck, we have encountered detector trouble for two years in a low. Thus, we have few data to analyze and obtained quite limited results. (author)

  9. Electrochemical Solution Growth of Magnetic Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-10-01

    Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

  10. Nitride fuels irradiation performance data base

    International Nuclear Information System (INIS)

    Brozak, D.E.; Thomas, J.K.; Peddicord, K.L.

    1987-01-01

    An irradiation performance data base for nitride fuels has been developed from an extensive literature search and review that emphasized uranium nitride, but also included performance data for mixed nitrides [(U,Pu)N] and carbonitrides [(U,Pu)C,N] to increase the quantity and depth of pin data available. This work represents a very extensive effort to systematically collect and organize irradiation data for nitride-based fuels. The data base has many potential applications. First, it can facilitate parametric studies of nitride-based fuels to be performed using a wide range of pin designs and operating conditions. This should aid in the identification of important parameters and design requirements for multimegawatt and SP-100 fuel systems. Secondly, the data base can be used to evaluate fuel performance models. For detailed studies, it can serve as a guide to selecting a small group of pin specimens for extensive characterization. Finally, the data base will serve as an easily accessible and expandable source of irradiation performance information for nitride fuels

  11. Borated aluminum alloy manufacturing technology

    International Nuclear Information System (INIS)

    Shimojo, Jun; Taniuchi, Hiroaki; Kajihara, Katsura; Aruga, Yasuhiro

    2003-01-01

    Borated aluminum alloy is used as the basket material of cask because of its light weight, thermal conductivity and superior neutron absorbing abilities. Kobe Steel has developed a unique manufacturing process for borated aluminum alloy using a vacuum induction melting method. In this process, aluminum alloy is melted and agitated at higher temperatures than common aluminum alloy fabrication methods. It is then cast into a mold in a vacuum atmosphere. The result is a high quality aluminum alloy which has a uniform boron distribution and no impurities. (author)

  12. Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

    DEFF Research Database (Denmark)

    Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.

    2001-01-01

    grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically...

  13. Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided

    International Nuclear Information System (INIS)

    Medina F, A.; Naquid G, C.

    2000-01-01

    It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

  14. Design and Implementation of a High-Flux Photoneutron Converter for Analysis of Fast Neutron Radiation Damage on Gallium Nitride Transistors

    Science.gov (United States)

    2017-06-01

    as the polarization and 2DEG control between aluminum gallium nitride (AlGaN) and GaN layers. Third, the physical and electrical properties of...electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” Journal of Applied Physics , vol...relationship of the electrical and physical characteristics of the devices with respect to the fast neutron fluence. The damage was also analyzed using

  15. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  16. Green synthesis of nanocrystalline α-Al2O3 powders by both wet-chemical and mechanochemical methods

    Science.gov (United States)

    Gao, Huiying; Li, Zhiyong; Zhao, Peng

    2018-03-01

    Nanosized α-Al2O3 powders were prepared with AlCl3ṡ6H2O and NH4HCO3 as raw materials by both wet-chemical and mechanochemical methods, through the synthesis of the ammonium aluminum carbonate hydroxide (AACH) precursor followed by calcination. The environmentally benign starch was used as an effective dispersant during the preparation of nanocrystalline α-Al2O3 powders. X-ray diffraction (XRD), thermogravimetric differential thermal analysis (TG-DTA), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were employed to characterize the precursor AACH and products. The results show that nanosized spherical α-Al2O3 powders without hard agglomeration and with particle size in the range of 20-40 nm can be obtained by the two methods. Comparing the two “green” processes, the mechanochemical method has better prospects for commercial production.

  17. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LEDs

    International Nuclear Information System (INIS)

    Schujman, Sandra; Schowalter, Leo

    2011-01-01

    The objective of this project was to develop and then demonstrate the efficacy of a cost effective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this 'GaN-ready' substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded Al x Ga 1-x N layers on top. Pseudomorphic Al x Ga 1-x N epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 10 8 cm -2 while the pseudomorphic LEDs have TDD (le) 10 5 cm -2 . The resulting TDD, when grading the Al x Ga 1-x N layer all the way to pure GaN to produce a 'GaN-ready' substrate, has varied between the mid 10 8 down to the 10 6 cm -2 . These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  18. Review: Plasma-enhanced chemical vapor deposition of nanocrystalline diamond

    Directory of Open Access Journals (Sweden)

    Katsuyuki Okada

    2007-01-01

    Full Text Available Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles of 200–700 nm diameter have been prepared in a 13.56 MHz low-pressure inductively coupled CH4/CO/H2 plasma. The bonding state of carbon atoms was investigated by ultraviolet-excited Raman spectroscopy. Electron energy loss spectroscopy identified sp2-bonded carbons around the 20–50 nm subgrains of nanocrystalline diamond particles. Plasma diagnostics using a Langmuir probe and the comparison with plasma simulation are also reviewed. The electron energy distribution functions are discussed by considering different inelastic interaction channels between electrons and heavy particles in a molecular CH4/H2 plasma.

  19. Thermodynamic and experimental study on phase stability in nanocrystalline alloys

    International Nuclear Information System (INIS)

    Xu Wenwu; Song Xiaoyan; Lu Nianduan; Huang Chuan

    2010-01-01

    Nanocrystalline alloys exhibit apparently different phase transformation characteristics in comparison to the conventional polycrystalline alloys. The special phase stability and phase transformation behavior, as well as the essential mechanisms of the nanocrystalline alloys, were described quantitatively in a nanothermodynamic point of view. By introducing the relationship between the excess volume at the grain boundary and the nanograin size, the Gibbs free energy was determined distinctly as a function of temperature and the nanograin size. Accordingly, the grain-size-dependence of the phase stability and phase transformation characteristics of the nanocrystalline alloy were calculated systematically, and the correlations between the phase constitution, the phase transformation temperature and the critical nanograin size were predicted. A series of experiments was performed to investigate the phase transformations at room temperature and high temperatures using the nanocrystalline Sm 2 Co 17 alloy as an example. The phase constitution and phase transformation sequence found in nanocrystalline Sm 2 Co 17 alloys with various grain-size levels agree well with the calculations by the nanothermodynamic model.

  20. Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

    DEFF Research Database (Denmark)

    Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

    2015-01-01

    Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average ...

  1. Preparing microspheres of actinide nitrides from carbon containing oxide sols

    International Nuclear Information System (INIS)

    Triggiani, L.V.

    1975-01-01

    A process is given for preparing uranium nitride, uranium oxynitride, and uranium carboxynitride microspheres and the microspheres as compositions of matter. The microspheres are prepared from carbide sols by reduction and nitriding steps. (Official Gazette)

  2. Characterisation of Suspension Precipitated Nanocrystalline Hydroxyapatite Powders

    International Nuclear Information System (INIS)

    Mallik, P K; Swain, P.K.; Patnaik, S.C

    2016-01-01

    Hydroxyapatite (HA) is a well-known biomaterial for coating on femoral implants, filling of dental cavity and scaffold for tissue replacement. Hydroxyapatite possess limited load bearing capacity due to their brittleness. In this paper, the synthesis of nanocrystalline hydroxyapatite powders was prepared by dissolving calcium oxide in phosphoric acid, followed by addition of ammonia liquor in a beaker. The prepared solution was stirred by using magnetic stirrer operated at temperature of 80°C for an hour. This leads to the formation of hydroxyapatite precipitate. The precipitate was dried in oven for overnight at 100°C. The dried agglomerated precipitate was calcined at 800°C in conventional furnace for an hour. The influence of calcium oxide concentration and pH on the resulting precipitates was studied using BET, XRD and SEM. As result, a well-defined sub-rounded morphology of powders size of ∼41 nm was obtained with a salt concentration of 0.02 M. Finally, it can be concluded that small changes in the reaction conditions led to large changes in final size, shape and degree of aggregation of the hydroxyapatite particles. (paper)

  3. Thermally Stimulated Currents in Nanocrystalline Titania

    Directory of Open Access Journals (Sweden)

    Mara Bruzzi

    2018-01-01

    Full Text Available A thorough study on the distribution of defect-related active energy levels has been performed on nanocrystalline TiO2. Films have been deposited on thick-alumina printed circuit boards equipped with electrical contacts, heater and temperature sensors, to carry out a detailed thermally stimulated currents analysis on a wide temperature range (5–630 K, in view to evidence contributions from shallow to deep energy levels within the gap. Data have been processed by numerically modelling electrical transport. The model considers both free and hopping contribution to conduction, a density of states characterized by an exponential tail of localized states below the conduction band and the convolution of standard Thermally Stimulated Currents (TSC emissions with gaussian distributions to take into account the variability in energy due to local perturbations in the highly disordered network. Results show that in the low temperature range, up to 200 K, hopping within the exponential band tail represents the main contribution to electrical conduction. Above room temperature, electrical conduction is dominated by free carriers contribution and by emissions from deep energy levels, with a defect density ranging within 1014–1018 cm−3, associated with physio- and chemi-sorbed water vapour, OH groups and to oxygen vacancies.

  4. Arsenic removal by magnetic nanocrystalline barium hexaferrite

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Hasmukh A.; Byun, Jeehye; Yavuz, Cafer T., E-mail: yavuz@kaist.ac.kr [Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST) (Korea, Republic of)

    2012-07-15

    Nanoscale magnetite (Fe{sub 3}O{sub 4}) (<15 nm) is known to remove arsenic efficiently but is very difficult to separate or require high magnetic fields to separate out from the waste water after treatment. Anisotropic hexagonal ferrite (BaFe{sub 12}O{sub 19}, BHF) is a well-known permanent magnet (i.e., fridge magnets) and attractive due to its low cost in making large quantities. BHF offers a viable alternative to magnetite nanocrystals for arsenic removal since it features surfaces similar to iron oxides but with much enhanced magnetism. Herein, we employ BHF nanocrystalline materials for the first time in arsenic removal from wastewater. Our results show better (75 %) arsenic removal than magnetite of the similar sizes. The BHF nanoparticles, 6.06 {+-} 0.52 nm synthesized by thermolysis method at 320 Degree-Sign C do not show hexagonal phase, however, subsequent annealing at 750 Degree-Sign C produced pure hexagonal BHF in >200 nm assemblies. By using BHF, we demonstrate that nanoparticle removal is more efficient and fixed bed type cartridge applications are more possible.

  5. Advancing liquid metal reactor technology with nitride fuels

    International Nuclear Information System (INIS)

    Lyon, W.F.; Baker, R.B.; Leggett, R.D.; Matthews, R.B.

    1991-08-01

    A review of the use of nitride fuels in liquid metal fast reactors is presented. Past studies indicate that both uranium nitride and uranium/plutonium nitride possess characteristics that may offer enhanced performance, particularly in the area of passive safety. To further quantify these effects, the analysis of a mixed-nitride fuel system utilizing the geometry and power level of the US Advanced Liquid Metal Reactor as a reference is described. 18 refs., 2 figs., 2 tabs

  6. High performance corrosion and wear resistant composite titanium nitride layers produced on the AZ91D magnesium alloy by a hybrid method

    Directory of Open Access Journals (Sweden)

    Michał Tacikowski

    2014-09-01

    Full Text Available Composite, diffusive titanium nitride layers formed on a titanium and aluminum sub-layer were produced on the AZ91D magnesium alloy. The layers were obtained using a hybrid method which combined the PVD processes with the final sealing by a hydrothermal treatment. The microstructure, resistance to corrosion, mechanical damage, and frictional wear of the layers were examined. The properties of the AZ91D alloy covered with these layers were compared with those of the untreated alloy and of some engineering materials such as 316L stainless steel, 100Cr6 bearing steel, and the AZ91D alloy subjected to commercial anodizing. It has been found that the composite diffusive nitride layer produced on the AZ91D alloy and then sealed by the hydrothermal treatment ensures the corrosion resistance comparable with that of 316L stainless steel. The layers are characterized by higher electrochemical durability which is due to the surface being overbuilt with the titanium oxides formed, as shown by the XPS examinations, from titanium nitride during the hydrothermal treatment. The composite titanium nitride layers exhibit high resistance to mechanical damage and wear, including frictional wear which is comparable with that of 100Cr6 bearing steel. The performance properties of the AZ91D magnesium alloy covered with the composite titanium nitride coating are substantially superior to those of the alloy subjected to commercial anodizing which is the dominant technique employed in industrial practice.

  7. Nanocrystalline and ultrafine grain copper obtained by mechanical attrition

    Directory of Open Access Journals (Sweden)

    Rodolfo Rodríguez Baracaldo

    2010-01-01

    Full Text Available This article presents a method for the sample preparation and characterisation of bulk copper having grain size lower than 1 μm (ultra-fine grain and lower than 100 nm grain size (nanocrystalline. Copper is initially manufactured by a milling/alloying me- chanical method thereby obtaining a powder having a nanocrystalline structure which is then consolidated through a process of warm compaction at high pressure. Microstructural characterisation of bulk copper samples showed the evolution of grain size during all stages involved in obtaining it. The results led to determining the necessary conditions for achieving a wide range of grain sizes. Mechanical characterisation indicated an increase in microhardness to values of around 3.40 GPa for unconsolida- ted nanocrystalline powder. Compressivee strength was increased by reducing the grain size, thereby obtaining an elastic limit of 650 MPa for consolidated copper having a ~ 62 nm grain size.

  8. Creep behavior of a nanocrystalline Fe-B-Si alloy

    International Nuclear Information System (INIS)

    Xiao, M.; Kong, Q.P.

    1997-01-01

    The research of nanocrystalline materials has attracted much attention in the world. In recent years, there have been several studies on their creep behavior. Among these, the authors have studied the tensile creep of a nanocrystalline Ni-P alloy (28 nm) at temperatures around 0.5 Tm (Tm is the melting point). The samples were prepared by the method of crystallization of amorphous ribbon. Based on the data of stress exponent and activation energy, they suggested that the creep was controlled by boundary diffusion; while the creep of the same alloy with a larger grain size (257 nm) was controlled by a different mechanism. In the present paper, the authors extend the research to the creep of a nanocrystalline Fe-B-Si alloy. The samples are also prepared by crystallization of amorphous ribbon. The samples such prepared have an advantage that the interfaces are naturally formed without artificial compaction and porosity

  9. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

    2015-11-15

    The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

  10. Microstructure characterization and cation distribution of nanocrystalline cobalt ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Abbas, Y.M., E-mail: ymabbas@live.com [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Mansour, S.A.; Ibrahim, M.H. [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Ali, Shehab E., E-mail: shehab_physics@yahoo.com [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt)

    2011-11-15

    Nanocrystalline cobalt ferrite has been synthesized using two different methods: ceramic and co-precipitation techniques. The nanocrystalline ferrite phase has been formed after 3 h of sintering at 1000 deg. C. The structural and microstructural evolutions of the nanophase have been studied using X-ray powder diffraction and the Rietveld method. The refinement result showed that the type of the cationic distribution over the tetrahedral and octahedral sites in the nanocrystalline lattice is partially an inverse spinel. The transmission electronic microscope analysis confirmed the X-ray results. The magnetic properties of the samples were characterized using a vibrating sample magnetometer. - Highlights: > The refinement result showed that the cationic distribution over the sites in the lattice is partially an inverse spinel. > The transmission electronic microscope analysis confirmed the X-ray results. > The magnetic properties of the samples were characterized using a vibrating sample magnetometer.

  11. Microstructure characterization and cation distribution of nanocrystalline cobalt ferrite

    International Nuclear Information System (INIS)

    Abbas, Y.M.; Mansour, S.A.; Ibrahim, M.H.; Ali, Shehab E.

    2011-01-01

    Nanocrystalline cobalt ferrite has been synthesized using two different methods: ceramic and co-precipitation techniques. The nanocrystalline ferrite phase has been formed after 3 h of sintering at 1000 deg. C. The structural and microstructural evolutions of the nanophase have been studied using X-ray powder diffraction and the Rietveld method. The refinement result showed that the type of the cationic distribution over the tetrahedral and octahedral sites in the nanocrystalline lattice is partially an inverse spinel. The transmission electronic microscope analysis confirmed the X-ray results. The magnetic properties of the samples were characterized using a vibrating sample magnetometer. - Highlights: → The refinement result showed that the cationic distribution over the sites in the lattice is partially an inverse spinel. → The transmission electronic microscope analysis confirmed the X-ray results. → The magnetic properties of the samples were characterized using a vibrating sample magnetometer.

  12. Correlation of thermodynamics and grain growth kinetics in nanocrystalline metals

    International Nuclear Information System (INIS)

    Song Xiaoyan; Zhang Jiuxing; Li Lingmei; Yang Keyong; Liu Guoquan

    2006-01-01

    We investigated the correlation of thermodynamics and grain growth kinetics of nanocrystalline metals both theoretically and experimentally. A model was developed to describe the thermodynamic properties of nanograin boundaries, which could give reliable predictions in the destabilization characteristics of nanograin structures and the slowing down of grain growth kinetics at a constant temperature. Both the temperature-varying and isothermal nanograin growth behaviors in pure nanocrystalline Co were studied to verify the thermodynamic predictions. The experimental results showing that discontinuous nanograin growth takes place at a certain temperature and grain growth rate decreases monotonically with time confirm our thermodynamics-based description of nanograin growth characteristics. Therefore, we propose a thermodynamic viewpoint to explain the deviation of grain growth kinetics in nanocrystalline metals from those of polycrystalline materials

  13. Plasma nitridation optimization for sub-15 A gate dielectrics

    NARCIS (Netherlands)

    Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

    The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

  14. Ion nitriding in 316=L stainless steel

    International Nuclear Information System (INIS)

    Rojas-Calderon, E.L.

    1989-01-01

    Ion nitriding is a glow discharge process that is used to induce surface modification in metals. It has been applied to 316-L austenitic stainless steel looking for similar benefits already obtained in other steels. An austenitic stainless steel was selected because is not hardenable by heat treatment and is not easy to nitride by gas nitriding. The samples were plastically deformed to 10, 20, 40, 50 AND 70% of their original thickness in order to obtain bulk hardening and to observe nitrogen penetration dependence on it. The results were: an increase of one to two rockwell hardness number (except in 70% deformed sample because of its thickness); an increase of even several hundreds per cent in microhardness knoop number in nitrided surface. The later surely modifies waste resistance which would be worth to quantify in further studies. Microhardness measured in an internal transversal face to nitrided surface had a gradual diminish in its value with depth. Auger microanalysis showed a higher relative concentration rate C N /C F e near the surface giving evidence of nitrogen presence till 250 microns deep. The color metallography etchant used, produced faster corrosion in nitrited regions. Therefore, corrosion studies have to be done before using ion nitrited 316-L under these chemicals. (Author)

  15. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  16. Bimodal microstructure and deformation of cryomilled bulk nanocrystalline Al-7.5Mg alloy

    International Nuclear Information System (INIS)

    Lee, Z.; Witkin, D.B.; Radmilovic, V.; Lavernia, E.J.; Nutt, S.R.

    2005-01-01

    The microstructure, mechanical properties and deformation response of bimodal structured nanocrystalline Al-7.5Mg alloy were investigated. Grain refinement was achieved by cryomilling of atomized Al-7.5Mg powders, and then cryomilled nanocrystalline powders blended with 15 and 30% unmilled coarse-grained powders were consolidated by hot isostatic pressing followed by extrusion to produce bulk nanocrystalline alloys. Bimodal bulk nanocrystalline Al-7.5Mg alloys, which were comprised of nanocrystalline grains separated by coarse-grain regions, show balanced mechanical properties of enhanced yield and ultimate strength and reasonable ductility and toughness compared to comparable conventional alloys and nanocrystalline metals. The investigation of tensile and hardness test suggests unusual deformation mechanisms and interactions between ductile coarse-grain bands and nanocrystalline regions

  17. Texture-dependent twin formation in nanocrystalline thin Pd films

    International Nuclear Information System (INIS)

    Wang, B.; Idrissi, H.; Shi, H.; Colla, M.S.; Michotte, S.; Raskin, J.P.; Pardoen, T.; Schryvers, D.

    2012-01-01

    Nanocrystalline Pd films were produced by electron-beam evaporation and sputter deposition. The electron-beam-evaporated films reveal randomly oriented nanograins with a relatively high density of growth twins, unexpected in view of the high stacking fault energy of Pd. In contrast, sputter-deposited films show a clear 〈1 1 1〉 crystallographic textured nanostructure without twins. These results provide insightful information to guide the generation of microstructures with enhanced strength/ductility balance in high stacking fault energy nanocrystalline metallic thin films.

  18. Engineering of giant magnetoimpedance effect of amorphous and nanocrystalline microwires

    Directory of Open Access Journals (Sweden)

    V. Zhukova

    2016-12-01

    Full Text Available We present our studies of the factors affecting soft magnetic properties and giant magnetoimpedance effect in thin amorphous and nanocrystalline microwires. We showed that the magnetoelastic anisotropy is one of the most important parameters that determine magnetic softness and GMI effect of glass-coated microwires  and annealing can be very effective for manipulation the magnetic properties of amorphous ferromagnetic glass-coated microwires. Considerable magnetic softening and increasing of the GMI effect is observed in Fe-rich nanocrystalline FINEMET-type glass-coated microwires after the nanocrystallization.

  19. Inter- and intra-agglomerate fracture in nanocrystalline nickel.

    Science.gov (United States)

    Shan, Zhiwei; Knapp, J A; Follstaedt, D M; Stach, E A; Wiezorek, J M K; Mao, S X

    2008-03-14

    In situ tensile straining transmission electron microscopy tests have been carried out on nanocrystalline Ni. Grain agglomerates (GAs) were found to form very frequently and rapidly ahead of an advancing crack with sizes much larger than the initial average grain size. High-resolution electron microscopy indicated that the GAs most probably consist of nanograins separated by low-angle grain boundaries. Furthermore, both inter- and intra-GA fractures were observed. The observations suggest that these newly formed GAs may play an important role in the formation of the dimpled fracture surfaces of nanocrystalline materials.

  20. High-pressure structural behaviour of nanocrystalline Ge

    International Nuclear Information System (INIS)

    Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

  1. Production of nanocrystalline metal powders via combustion reaction synthesis

    Science.gov (United States)

    Frye, John G.; Weil, Kenneth Scott; Lavender, Curt A.; Kim, Jin Yong

    2017-10-31

    Nanocrystalline metal powders comprising tungsten, molybdenum, rhenium and/or niobium can be synthesized using a combustion reaction. Methods for synthesizing the nanocrystalline metal powders are characterized by forming a combustion synthesis solution by dissolving in water an oxidizer, a fuel, and a base-soluble, ammonium precursor of tungsten, molybdenum, rhenium, or niobium in amounts that yield a stoichiometric burn when combusted. The combustion synthesis solution is then heated to a temperature sufficient to substantially remove water and to initiate a self-sustaining combustion reaction. The resulting powder can be subsequently reduced to metal form by heating in a reducing gas environment.

  2. Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

    Science.gov (United States)

    Lai, Kun-Yu

    Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

  3. 21 CFR 73.1645 - Aluminum powder.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Aluminum powder. 73.1645 Section 73.1645 Food and... ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1645 Aluminum powder. (a) Identity. (1) The color additive aluminum powder shall be composed of finely divided particles of aluminum prepared from virgin aluminum. It...

  4. Aluminum fin-stock alloys

    International Nuclear Information System (INIS)

    Gul, R.M.; Mutasher, F.

    2007-01-01

    Aluminum alloys have long been used in the production of heat exchanger fins. The comparative properties of the different alloys used for this purpose has not been an issue in the past, because of the significant thickness of the finstock material. However, in order to make fins lighter in weight, there is a growing demand for thinner finstock materials, which has emphasized the need for improved mechanical properties, thermal conductivity and corrosion resistance. The objective of this project is to determine the effect of iron, silicon and manganese percentage increment on the required mechanical properties for this application by analyzing four different aluminum alloys. The four selected aluminum alloys are 1100, 8011, 8079 and 8150, which are wrought non-heat treatable alloys with different amount of the above elements. Aluminum alloy 1100 serve as a control specimen, as it is commercially pure aluminum. The study also reports the effect of different annealing cycles on the mechanical properties of the selected alloys. Metallographic examination was also preformed to study the effect of annealing on the precipitate phases and the distribution of these phases for each alloy. The microstructure analysis of the aluminum alloys studied indicates that the precipitated phase in the case of aluminum alloys 1100 and 8079 is beta-FeAI3, while in 8011 it is a-alfa AIFeSi, and the aluminum alloy 8150 contains AI6(Mn,Fe) phase. The comparison of aluminum alloys 8011 and 8079 with aluminum alloy 1100 show that the addition of iron and silicon improves the percent elongation and reduces strength. The manganese addition increases the stability of mechanical properties along the annealing range as shown by the comparison of aluminum alloy 8150 with aluminum alloy 1100. Alloy 8150 show superior properties over the other alloys due to the reaction of iron and manganese, resulting in a preferable response to thermal treatment and improved mechanical properties. (author)

  5. A Low Temperature Synthetic Route to Nanocrystalline TiN

    African Journals Online (AJOL)

    NICO

    This method may be extended to the synthesis of other metal nitrides. ... direct current magnetron sputtering17, and mechanical mill- ... recent years, autoclaved synthesis of TiN nanomaterials from ... 3.2 XPS Characterization of the Samples.

  6. Thermodynamics, kinetics and process control of nitriding

    DEFF Research Database (Denmark)

    Mittemeijer, Eric J.; Somers, Marcel A. J.

    1997-01-01

    As a prerequisite for the predictability of properties obtained by a nitriding treatment of iron based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present, even the description of thermodynamic equilibrium...... of pure Fe-N phases has not been fully achieved. It is shown that taking into account the ordering of nitrogen in the epsilon and gamma' iron nitride phases leads to an improved understanding of the Fe-N phase diagram. Although consideration of thermodynamics indicates the state the system strives for...... for process control of gaseous nitriding by monitoring the partial pressure of oxygen in the furnace using a solid state electrolyte is provided. At the time the work was carried out the authors were in the Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft...

  7. X-ray absorption and emission study of amorphous and nanocrystalline GaN films containing buried N2

    International Nuclear Information System (INIS)

    Ruck, B.J.; Koo, A.; Budde, F.; Granville, S.; Trodahl, H.J.

    2004-01-01

    Full text: It has been predicted that amorphous gallium nitride (a-GaN) may possess a well-defined wide band gap, and is thus a potential substitute for the more expensive crystalline form used in short wavelength optoelectronic devices. Experimental investigations of disordered GaN have lent support to this prediction, but the picture is complicated because the properties of the amorphous state are not unique, and instead depend on the exact nature of the disordered structure. We have pioneered a novel ion-assisted growth technique that produces GaN films with a microstructure that ranges from nanocrystalline, with crystallite size of order 3 nm, to fully amorphous, depending on the exact growth conditions. This presentation will give an overview of our research into the properties of disordered GaN, including characterization of the physical structure of the films and their electronic energy levels, and also their photoconductive response. In particular I will focus on synchrotron radiation studies of samples with a range of different microstructures. X-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) provide particularly powerful tools for examining a sample's empty and filled electronic energy levels, respectively. The details of the absorption and emission processes make it possible to obtain atom-specific information and to investigate the symmetry of the electronic levels. An example of the information obtained is shown. The thin solid curve shows XAS data, which is a measure of the nitrogen /7-projected density of unfilled electronic states in this nanocrystalline GaN sample. The thick solid curve shows XES data from the same sample, which provides complementary information about the occupied valence band states. Although the spectral features are broader in fully amorphous films than in nanocrystalline samples, a well-defined band gap exists in both cases with magnitude similar to that of crystalline GaN. There are additional feature

  8. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis

    International Nuclear Information System (INIS)

    Hartner, Sonja; Schulz, Christof; Wiggers, Hartmut; Ali, Moazzam; Winterer, Markus

    2009-01-01

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  9. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

    Science.gov (United States)

    Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

    2009-11-04

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  10. Copper removal using electrosterically stabilized nanocrystalline cellulose.

    Science.gov (United States)

    Sheikhi, Amir; Safari, Salman; Yang, Han; van de Ven, Theo G M

    2015-06-03

    Removal of heavy metal ions such as copper using an efficient and low-cost method with low ecological footprint is a critical process in wastewater treatment, which can be achieved in a liquid phase using nanoadsorbents such as inorganic nanoparticles. Recently, attention has turned toward developing sustainable and environmentally friendly nanoadsorbents to remove heavy metal ions from aqueous media. Electrosterically stabilized nanocrystalline cellulose (ENCC), which can be prepared from wood fibers through periodate/chlorite oxidation, has been shown to have a high charge content and colloidal stability. Here, we show that ENCC scavenges copper ions by different mechanisms depending on the ion concentration. When the Cu(II) concentration is low (C0≲200 ppm), agglomerates of starlike ENCC particles appear, which are broken into individual starlike entities by shear and Brownian motion, as evidenced by photometric dispersion analysis, dynamic light scattering, and transmission electron microscopy. On the other hand, at higher copper concentrations, the aggregate morphology changes from starlike to raftlike, which is probably due to the collapse of protruding dicarboxylic cellulose (DCC) chains and ENCC charge neutralization by copper adsorption. Such raftlike structures result from head-to-head and lateral aggregation of neutralized ENCCs as confirmed by transmission electron microscopy. As opposed to starlike aggregates, the raftlike structures grow gradually and are prone to sedimentation at copper concentrations C0≳500 ppm, which eliminates a costly separation step in wastewater treatment processes. Moreover, a copper removal capacity of ∼185 mg g(-1) was achieved thanks to the highly charged DCC polyanions protruding from ENCC. These properties along with the biorenewability make ENCC a promising candidate for wastewater treatment, in which fast, facile, and low-cost removal of heavy metal ions is desired most.

  11. Tribological properties of nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Erdemir, A.; Fenske, G.R.; Krauss, A.R.; Gruen, D.M.; McCauley, T.; Csencsits, R.T. [Argonne National Lab., IL (United States). Energy Technology Div.

    1999-11-01

    In this paper, we present the friction and wear properties of nanocrystalline diamond (NCD) films grown in Ar-fullerene (C{sub 60}) and Ar-CH{sub 4} microwave plasmas. Specifically, we will address the fundamental tribological issues posed by these films during sliding against Si{sub 3}N{sub 4} counterfaces in ambient air and inert gases. Grain sizes of the films grown by the new method are very small (10-30 nm) and are much smoother (20-40 nm, root mean square) than those of films grown by the conventional H{sub 2}-CH{sub 4} microwave-assisted chemical vapor deposition process. Transmission electron microscopy (TEM) revealed that the grain boundaries of these films are very sharp and free of nondiamond phases. The microcrystalline diamond films grown by most conventional methods consist of large grains and a rough surface finish, which can cause severe abrasion during sliding against other materials. The friction coefficients of films grown by the new method (i.e. in Ar-C{sub 60} and Ar-CH{sub 4} plasmas) are comparable with those of natural diamond, and wear damage on counterface materials is minimal. Fundamental tribological studies indicate that these films may undergo phase transformation during long-duration, high-speed and/or high-load sliding tests and that the transformation products trapped at the sliding interfaces can intermittently dominate friction and wear performance. Using results from a combination of TEM, electron diffraction, Raman spectroscopy, and electron energy loss spectroscopy, we describe the structural chemistry of the debris particles trapped at the sliding interfaces and elucidate their possible effects on friction and wear of NCD films in dry N{sub 2}. Finally, we suggest a few potential applications in which NCD films can improve performance and service lives. (orig.)

  12. Conducting metal oxide and metal nitride nanoparticles

    Science.gov (United States)

    DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

    2017-12-26

    Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

  13. Molecular dynamics studies of actinide nitrides

    International Nuclear Information System (INIS)

    Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

    2004-01-01

    The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

  14. Local heating with titanium nitride nanoparticles

    DEFF Research Database (Denmark)

    Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.

    2013-01-01

    We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

  15. Production of aluminum metal by electrolysis of aluminum sulfide

    Science.gov (United States)

    Minh, Nguyen Q.; Loutfy, Raouf O.; Yao, Neng-Ping

    1984-01-01

    Production of metallic aluminum by the electrolysis of Al.sub.2 S.sub.3 at 700.degree.-800.degree. C. in a chloride melt composed of one or more alkali metal chlorides, and one or more alkaline earth metal chlorides and/or aluminum chloride to provide improved operating characteristics of the process.

  16. Improvement of mechanical and tribological properties in steel surfaces by using titanium-aluminum/titanium-aluminum nitride multilayered system

    Energy Technology Data Exchange (ETDEWEB)

    Ipaz, L., E-mail: leoipazc@gmail.com [Thin Films Group, Physics departament, Universidad del Valle, Calle 13 100-00, A.A. 25360, Cali (Colombia); Caicedo, J.C. [Thin Films Group, Physics departament, Universidad del Valle, Calle 13 100-00, A.A. 25360, Cali (Colombia); Esteve, J. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Espinoza-Beltran, F.J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, C.P. 76230 (Mexico); Zambrano, G. [Thin Films Group, Physics departament, Universidad del Valle, Calle 13 100-00, A.A. 25360, Cali (Colombia)

    2012-02-01

    Improvement of mechanical and tribological properties on AISI D3 steel surfaces coated with [Ti-Al/Ti-Al-N]{sub n} multilayer systems deposited in various bilayer periods ({Lambda}) via magnetron co-sputtering pulsed d.c. method, from a metallic binary target; has been studied in this work exhaustively. The multilayer coatings were characterized in terms of structural, chemical, morphological, mechanical and tribological properties by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy, nanoindentation, pin-on-disc and scratch tests, respectively. The failure mode mechanisms were studied by optical microscopy. Results from X-ray diffraction analysis revealed that the crystal structure of TiAl/TiAlN multilayer coatings has a tetragonal and FCC NaCl-type lattice structures for Ti-Al and Ti-Al-N, respectively, i.e., it was found to be non-isostructural multilayers. An enhancement of both hardness and elastic modulus up to 29 GPa and 260 GPa, respectively, was observed as the bilayer periods ({Lambda}) in the coatings were decreased. The sample with a bilayer period ({Lambda}) of 25 nm and bilayer number n = 100 showed the lowest friction coefficient ({approx}0.28) and the highest critical load (45 N), corresponding to 2.7 and 1.5 times better than those values for the coating deposited with n = 1, respectively. These results indicate an enhancement of mechanical, tribological and adhesion properties, comparing to the [Ti-Al/Ti-Al-N]{sub n} multilayer systems with 1 bilayer at 26%, 63% and 33%, respectively. This enhancement in hardness and toughness for multilayer coatings could be attributed to the different mechanisms for layer formation with nanometric thickness such as the novel Ti-Al/Ti-Al-N effect and the number of interfaces that act as obstacles for the crack deflection and dissipation of crack energy.

  17. Applied Electrochemistry of Aluminum

    DEFF Research Database (Denmark)

    Li, Qingfeng; Qiu, Zhuxian

    Electrochemistry of aluminum is of special importance from both theoretical and technological point of view. It covers a wide range of electrolyte systems from molten fluoride melts at around 1000oC to room temperature molten salts, from aqueous to various organic media and from liquid to solid...... electrolytes. The book is an updated review of the technological advances in the fields of electrolytic production and refining of metals, electroplating, anodizing and other electrochemical surface treatments, primary and secondary batteries, electrolytic capacitors; corrosion and protection and others....

  18. Nitriding of Ti substrate using energetic ions from plasma focus device

    International Nuclear Information System (INIS)

    Henriquez, A; Bhuyan, H; Favre, M; Bora, B; Wyndham, E; Chuaqui, H; Mändl, S; Gerlach, J W; Manova, D

    2012-01-01

    Plasma Focus (PF) discharge is a pulsed plasma producing discharge that generates high temperature and high density plasma for a short duration. PF devices are known to emit intense ion beams pulses of characteristic energy in the keV to a few MeV range, in a time scale of tens of nanoseconds. We have previously investigated the ion flux and energy spectrum of ion beams emitted from a low energy PF, operating at 20 kV, with 1.8 kJ stored energy. It was observed that the ion beams have wide range of energy and intensity spectra with a clear angular anisotropy. Due to the wide range of ion energy and intensity spectra PF has become a subject of current interest for its applications in material sciences including surface modification and thin film deposition. The purpose of this study is the formation of titanium nitride (TiN) thin film and to investigate the structural properties of the TiN thin films in terms of PF angular positions. Substrates like Ti and Ti/Si were nitrided in a 1.8 kJ PF device at different angular positions with respect to the PF axis in order to correlate their surface properties with ion beam parameters. Preliminary characterizations of the ion implanted substrates have been conducted, using SEM, EDX and XRD. Our results indicate the formation of nanocrystalline TiN thin film only in certain angular positions. Angular dependency of the surface morphology was observed, which shows that the surface features strongly depends on ion beam energy and flux. With increasing angular positions, a reduction in the deposition rate and the sputter rate is observed. A pronounced nanostructured surface is only observed at the axis of the pinched plasma column, indicating the dominant role of sputtering and perhaps melting and fast re-crystallization of the surface in creating the nanostructures.

  19. Optical properties of nitride nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Cantarero, A.; Cros, A.; Garro, N.; Gomez-Gomez, M.I.; Garcia, A.; Lima, M.M. de [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, CEA/Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Rizzi, A.; Denker, C.; Malindretos, J. [IV. Physikalisches Institut, Georg August Universitaet Goettingen, 37073 Goettingen (Germany)

    2011-01-15

    In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or the spacer on the relaxation of the QDs. A theoretical model, based on continuous elastic theory, were developed to interpret the Raman scattering results. On the other hand, InN NCs have been grown by MBE in the vapor-liquid-solid mode using Au as a catalyst. The nanocolumns have different morphology depending on the growth conditions. The optical properties can be correlated to the morphology of the samples and the best growth conditions can be selected. We observe, from the analysis of the Raman data in InN NCs, the existence of two space regions contributing to the scattering: the surface and the inner region. From the inner region, uncoupled phonon modes are clearly observed, showing the high crystal quality and the complete relaxation of the NCs (no strain). The observation of a LO-phonon-plasmon couple in the same spectra is a fingerprint of the accumulation layer predicted at the surface of the nanocolumns. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  1. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  2. Helium trapping in aluminum and sintered aluminum powders

    International Nuclear Information System (INIS)

    Das, S.K.; Kaminsky, M.; Rossing, T.

    1975-01-01

    The surface erosion of annealed aluminum and of sintered aluminum powder (SAP) due to blistering from implantation of 100-keV 4 He + ions at room temperature has been investigated. A substantial reduction in the blistering erosion rate in SAP was observed from that in pure annealed aluminum. In order to determine whether the observed reduction in blistering is due to enhanced helium trapping or due to helium released, the implanted helium profiles in annealed aluminum and in SAP have been studied by Rutherford backscattering. The results show that more helium is trapped in SAP than in aluminum for identical irradiation conditions. The observed reduction in erosion from helium blistering in SAP is more likely due to the dispersion of trapped helium at the large Al-Al 2 O 3 interfaces and at the large grain boundaries in SAP than to helium release

  3. Surface modification of 17-4PH stainless steel by DC plasma nitriding and titanium nitride film duplex treatment

    International Nuclear Information System (INIS)

    Qi, F.; Leng, Y.X.; Huang, N.; Bai, B.; Zhang, P.Ch.

    2007-01-01

    17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film

  4. Selective Adsorption of Sodium Aluminum Fluoride Salts from Molten Aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Leonard S. Aubrey; Christine A. Boyle; Eddie M. Williams; David H. DeYoung; Dawid D. Smith; Feng Chi

    2007-08-16

    Aluminum is produced in electrolytic reduction cells where alumina feedstock is dissolved in molten cryolite (sodium aluminum fluoride) along with aluminum and calcium fluorides. The dissolved alumina is then reduced by electrolysis and the molten aluminum separates to the bottom of the cell. The reduction cell is periodically tapped to remove the molten aluminum. During the tapping process, some of the molten electrolyte (commonly referred as “bath” in the aluminum industry) is carried over with the molten aluminum and into the transfer crucible. The carryover of molten bath into the holding furnace can create significant operational problems in aluminum cast houses. Bath carryover can result in several problems. The most troublesome problem is sodium and calcium pickup in magnesium-bearing alloys. Magnesium alloying additions can result in Mg-Na and Mg-Ca exchange reactions with the molten bath, which results in the undesirable pickup of elemental sodium and calcium. This final report presents the findings of a project to evaluate removal of molten bath using a new and novel micro-porous filter media. The theory of selective adsorption or removal is based on interfacial surface energy differences of molten aluminum and bath on the micro-porous filter structure. This report describes the theory of the selective adsorption-filtration process, the development of suitable micro-porous filter media, and the operational results obtained with a micro-porous bed filtration system. The micro-porous filter media was found to very effectively remove molten sodium aluminum fluoride bath by the selective adsorption-filtration mechanism.

  5. Fast response time alcohol gas sensor using nanocrystalline F

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 36; Issue 4. Fast response time alcohol gas sensor using nanocrystalline F-doped SnO2 films derived via sol–gel method. Sarbani Basu Yeong-Her Wang C Ghanshyam Pawan Kapur. Volume 36 Issue 4 August 2013 pp 521-533 ...

  6. High-pressure structural behavior of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, H.; Liu, J. F.; Yan, H.

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

  7. Induced anisotropy effect in nanocrystalline cores for GFCBs

    Energy Technology Data Exchange (ETDEWEB)

    Waeckerle, T. E-mail: thierry.waeckerle@imphy.usinor.com; Verin, Ph.; Cremer, P.; Gautard, D

    2000-06-02

    Nanocrystalline materials are very efficient for GFCB cores with flat hysteresis loop, especially if permeability may be raised in keeping low the remanent induction. This can be achieved with peculiar field annealing . A thermodynamic model is proposed to explain the experimental evidence.

  8. Bioactive nanocrystalline wollastonite synthesized by sol–gel ...

    Indian Academy of Sciences (India)

    The sol–gel combustion method was employed to synthesize the nanocrystalline wollastonite by taking the raw eggshell powder as a calcium source and TEOS as a source of silicate. Glycine was .... 94·37% CaCO3, hence in order to prepare 1 M Ca2+ ion solu- ... requires an acid or base catalyst hence the pH of the solu-.

  9. High Pressure X-Ray Diffraction Studies on Nanocrystalline Materials

    Science.gov (United States)

    Palosz, B.; Stelmakh, S.; Grzanka, E.; Gierlotka, S.; Pielaszek, R.; Bismayer, U.; Werner, S.; Palosz, W.

    2003-01-01

    Application of in situ high pressure powder diffraction technique for examination of specific structural properties of nanocrystals based on the experimental data of SiC nanocrystalline powders of 2 to 30 nrn diameter in diameter is presented. Limitations and capabilities of the experimental techniques themselves and methods of diffraction data elaboration applied to nanocrystals with very small dimensions (nanoparticles of different grain size.

  10. Bioactive nanocrystalline wollastonite synthesized by sol–gel ...

    Indian Academy of Sciences (India)

    The sol–gel combustion method was employed to synthesize the nanocrystalline wollastonite by taking the raw eggshell powder as a calcium source and TEOS as a source of silicate. Glycine was used as a reductant or fuel and nitrate ions present in metal nitrate acts as an oxidizer. The phase purity of the wollastonite was ...

  11. New route to the fabrication of nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Varshney, Deepak; Morell, Gerardo; Palomino, Javier; Resto, Oscar; Gil, Jennifer; Weiner, Brad R.

    2014-01-01

    Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production

  12. Quartz crystal microbalance gas sensor with nanocrystalline diamond sensitive layer

    Czech Academy of Sciences Publication Activity Database

    Varga, Marián; Laposa, A.; Kulha, Pavel; Kroutil, J.; Husák, M.; Kromka, Alexander

    2015-01-01

    Roč. 252, č. 11 (2015), s. 2591-2597 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : gas sensor * nanocrystalline diamond * quartz resonator * thickness shear mode Subject RIV: JB - Sensor s, Measurment, Regulation Impact factor: 1.522, year: 2015

  13. Transparent nanocrystalline ZnO films prepared by spin coating

    Energy Technology Data Exchange (ETDEWEB)

    Berber, M. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany)]. E-mail: mete.berber@sustech.de; Bulto, V. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Kliss, R. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Hahn, H. [SusTech GmbH and Co. KG, Petersenstr. 20, 64287 Darmstadt, Hessen (Germany); Forschungszentrum Karlsruhe, Institute for Nanotechnology, Postfach 3640, 76021 Karlsruhe (Germany); Joint Research Laboratory Nanomaterials, TU Darmstadt, Institute of Materials Science, Petersenstr. 23, 64287 Darmstadt (Germany)

    2005-09-15

    Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents.

  14. Transparent nanocrystalline ZnO films prepared by spin coating

    International Nuclear Information System (INIS)

    Berber, M.; Bulto, V.; Kliss, R.; Hahn, H.

    2005-01-01

    Dispersions of zinc oxide nanoparticles synthesized by the electrochemical deposition under oxidizing conditions process with organic surfactants, were spin coated on glass substrates. After sintering, the microstructure, surface morphology, and electro-optical properties of the transparent nanocrystalline zinc oxide films have been investigated for different coating thicknesses and organic solvents

  15. Nanocrystalline spinel ferrites by solid state reaction route

    Indian Academy of Sciences (India)

    Wintec

    Nanocrystalline spinel ferrites by solid state reaction route. T K KUNDU* and S MISHRA. Department of Physics, Visva-Bharati, Santiniketan 731 235, India. Abstract. Nanostructured NiFe2O4, MnFe2O4 and (NiZn)Fe2O4 were synthesized by aliovalent ion doping using conventional solid-state reaction route. With the ...

  16. Electrodeposited nanocrystalline bronze alloys as replacement for Ni

    NARCIS (Netherlands)

    Hovestad, A.; Tacken, R.A.; Mannetje, H.H.'t

    2008-01-01

    Nanocrystalline white-bronze, CuSn, electroplating was investigated as alternative to Ni plating as undercoat for noble metals in jewellery applications. A strongly acidic plating bath was developed with an organic additive to suppress hydrogen evolution and obtain bright coatings. Polarization

  17. Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons

    Energy Technology Data Exchange (ETDEWEB)

    Z. Zak Fang, H. Y. Sohn

    2009-03-10

    This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.

  18. Adhesion of osteoblasts on chemically patterned nanocrystalline diamonds

    Czech Academy of Sciences Publication Activity Database

    Kalbáčová, M.; Michalíková, Lenka; Barešová, V.; Kromka, Alexander; Rezek, Bohuslav; Kmoch, S.

    2008-01-01

    Roč. 245, č. 10 (2008), s. 2124-2127 ISSN 0370-1972 R&D Projects: GA AV ČR KAN400100701 Institutional research plan: CEZ:AV0Z10100521 Keywords : cell growth * nanocrystalline diamond * surface termination Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.166, year: 2008

  19. Oxygen reduction on nanocrystalline ruthenia-local structure effects

    DEFF Research Database (Denmark)

    Abbott, Daniel F.; Mukerjee, Sanjeev; Petrykin, Valery

    2015-01-01

    Nanocrystalline ruthenium dioxide and doped ruthenia of the composition Ru1-xMxO2 (M = Co, Ni, Zn) with 0 ≤ x ≤ 0.2 were prepared by the spray-freezing freeze-drying technique. The oxygen reduction activity and selectivity of the prepared materials were evaluated in alkaline media using the RRDE ...

  20. Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

    2015-01-01

    Roč. 129, May (2015), 95-99 ISSN 0927-7765 R&D Projects: GA ČR GAP108/12/0996 Grant - others:AVČR(CZ) M100101209 Institutional support: RVO:68378271 Keywords : field-effect transistors * nanocrystalline diamond * osteoblastic cells * leakage currents Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.902, year: 2015

  1. Luminescence of nanocrystalline ZnSe:Mn2+

    NARCIS (Netherlands)

    Suyver, J.F.; Wuister, S.F.; Kelly, J.J.; Meijerink, A.

    2000-01-01

    The luminescence properties of nanocrystalline ZnSe:Mn^(2+) prepared via an inorganic chemical synthesis are described. Photoluminescence spectra show distinct ZnSe and Mn^(2+) related emissions, both of which are excited via the ZnSe host lattice. The Mn^(2+) emission wavelength and the

  2. Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

    International Nuclear Information System (INIS)

    Strohaecker, T.R.; Nobrega, M.C.S.

    1989-01-01

    The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

  3. Strain rate sensitivity studies on bulk nanocrystalline aluminium by nanoindentation

    Energy Technology Data Exchange (ETDEWEB)

    Varam, Sreedevi; Rajulapati, Koteswararao V., E-mail: kvrse@uohyd.ernet.in; Bhanu Sankara Rao, K.

    2014-02-05

    Nanocrystalline aluminium powder synthesized using high energy ball milling process was characterized by X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). The studies indicated the powder having an average grain size of ∼42 nm. The consolidation of the powder was carried out by high-pressure compaction using a uni-axial press at room temperature by applying a pressure of 1.5 GPa. The cold compacted bulk sample having a density of ∼98% was subjected to nanoindentation which showed an average hardness and elastic modulus values of 1.67 ± 0.09 GPa and 83 ± 8 GPa respectively at a peak force of 8000 μN and a strain rate of 10{sup −2} s{sup −1}. Achieving good strength along with good ductility is challenging in nanocrystalline metals. When enough sample sizes are not available to measure ductility and other mechanical properties as per ASTM standards, as is the case with nanocrystalline materials, nanoindentation is a very promising technique to evaluate strain rate sensitivity. Strain rate sensitivity is a good measure of ductility and in the present work it is measured by performing indentation at various loads with varying loading rates. Strain rate sensitivity values of 0.024–0.054 are obtained for nanocrystalline Al which are high over conventional coarse grained Al. In addition, Scanning Probe Microscopy (SPM) image of the indent shows that there is some plastically flown region around the indent suggesting that this nanocrystalline aluminium is ductile.

  4. Boron nitride nanosheets reinforced glass matrix composites

    Czech Academy of Sciences Publication Activity Database

    Saggar, Richa; Porwal, H.; Tatarko, P.; Dlouhý, Ivo; Reece, M. J.

    2015-01-01

    Roč. 114, SEP (2015), S26-S32 ISSN 1743-6753 R&D Projects: GA MŠk(CZ) 7AMB14SK155 EU Projects: European Commission(XE) 264526 Institutional support: RVO:68081723 Keywords : Boron nitride nanosheets * Borosilicate glass * Mechanical properties Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 1.162, year: 2015

  5. Alkaline fuel cell with nitride membrane

    Science.gov (United States)

    Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

    2017-06-01

    The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

  6. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  7. Covalent biofunctionalization of silicon nitride surfaces

    NARCIS (Netherlands)

    Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

    2007-01-01

    Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

  8. Bandgap engineered graphene and hexagonal boron nitride

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  9. Plasmonic spectral tunability of conductive ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

    2016-06-27

    Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

  10. TiN coated aluminum electrodes for DC high voltage electron guns

    International Nuclear Information System (INIS)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A.; Taus, Rhys; Forman, Eric; Poelker, Matthew

    2015-01-01

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes

  11. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  12. Metal surface nitriding by laser induced plasma

    Science.gov (United States)

    Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

    1996-10-01

    We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

  13. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  14. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  15. Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

    International Nuclear Information System (INIS)

    Park, Joong-Hyun; Han, Sang-Myeon; Park, Sang-Geun; Han, Min-Koo; Shin, Moon-Young

    2006-01-01

    Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN X ) and silicon dioxide (SiO 2 ), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN X buffer layer is wider than SiO 2 and the maximum grain size slightly increased

  16. Aluminum anode for aluminum-air battery - Part I: Influence of aluminum purity

    Science.gov (United States)

    Cho, Young-Joo; Park, In-Jun; Lee, Hyeok-Jae; Kim, Jung-Gu

    2015-03-01

    2N5 commercial grade aluminum (99.5% purity) leads to the lower aluminum-air battery performances than 4N high pure grade aluminum (99.99% purity) due to impurities itself and formed impurity complex layer which contained Fe, Si, Cu and others. The impurity complex layer of 2N5 grade Al declines the battery voltage on standby status. It also depletes discharge current and battery efficiency at 1.0 V which is general operating voltage of aluminum-air battery. However, the impurity complex layer of 2N5 grade Al is dissolved with decreasing discharge voltage to 0.8 V. This phenomenon leads to improvement of discharge current density and battery efficiency by reducing self-corrosion reaction. This study demonstrates the possibility of use of 2N5 grade Al which is cheaper than 4N grade Al as the anode for aluminum-air battery.

  17. Invisible Display in Aluminum

    DEFF Research Database (Denmark)

    Prichystal, Jan Phuklin; Hansen, Hans Nørgaard; Bladt, Henrik Henriksen

    2005-01-01

    Bang & Olufsen a/s has been working with ideas for invisible integration of displays in metal surfaces. Invisible integration of information displays traditionally has been possible by placing displays behind transparent or semitransparent materials such as plastic or glass. The wish for an integ......Bang & Olufsen a/s has been working with ideas for invisible integration of displays in metal surfaces. Invisible integration of information displays traditionally has been possible by placing displays behind transparent or semitransparent materials such as plastic or glass. The wish...... for an integrated display in a metal surface is often ruled by design and functionality of a product. The integration of displays in metal surfaces requires metal removal in order to clear the area of the display to some extent. The idea behind an invisible display in Aluminum concerns the processing of a metal...

  18. NATO Advanced Research Workshop on Properties and Applications of Nanocrystalline Alloys from Amorphous Precursors

    CERN Document Server

    Idzikowski, Bogdan; Miglierini, Marcel

    2005-01-01

    Metallic (magnetic and non-magnetic) nanocrystalline materials have been known for over ten years but only recent developments in the research into those complex alloys and their metastable amorphous precursors have created a need to summarize the most important accomplishments in the field. This book is a collection of articles on various aspects of metallic nanocrystalline materials, and an attempt to address this above need. The main focus of the papers is put on the new issues that emerge in the studies of nanocrystalline materials, and, in particular, on (i) new compositions of the alloys, (ii) properties of conventional nanocrystalline materials, (iii) modeling and simulations, (iv) preparation methods, (v) experimental techniques of measurements, and (vi) different modern applications. Interesting phenomena of the physics of nanocrystalline materials are a consequence of the effects induced by the nanocrystalline structure. They include interface physics, the influence of the grain boundaries, the aver...

  19. Nitriding behavior of Ni and Ni-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fonovic, Matej

    2015-01-15

    Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

  20. Synthesis and Thermal Conductivity of Exfoliated Hexagonal Boron Nitride/Alumina Ceramic Composite

    Science.gov (United States)

    Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Lizcano, Maricela; Kelly, Marisabel

    2017-01-01

    Exfoliated hexagonal boron nitride (hBN)/alumina composite can be fabricated by following the process of (1) heating a mixture of hBN, AlCl3, and NaF in nitrogen for intercalation; (2) heating the intercalated product in air for exfoliation and at the same time converting the intercalate (AlCl3) into Al2O3, (3) rinsing the oxidized product, (4) coating individual exfoliated hBN platelets that contain Al2O3 with new layers of aluminum oxide, and finally, (5) hot pressing the product into the composite. The composite thus obtained has a composition of approximately 60 percent by weight hBN and 40 percent by weight alumina. Its in-plane and through-plane thermal conductivity were measured to be 86 and 18 watts per meter Kelvin, respectively, at room temperature.

  1. Theoretical study on recoilless fractions of simple cubic monatomic nanocrystalline particles

    International Nuclear Information System (INIS)

    Huang Jianping; Wang Luya

    2002-01-01

    Recoilless fractions of simple cubic monatomic nanocrystalline particles are calculated by using displacement-displacement Green's function. The numerical results show that the recoilless fractions on the surface of monatomic nanocrystalline particles are smaller than those in the inner, and they decrease when the particle size increase, the recoilless fractions of whole monatomic nanocrystalline particles increase when the particle size increase. These effects are more evident when the temperature is higher

  2. Vibrational thermodynamics of Fe90Zr7B3 nanocrystalline alloy from nuclear inelastic scattering

    DEFF Research Database (Denmark)

    Stankov, S.; Miglierini, M.; Chumakov, A. I.

    2010-01-01

    Recently we determined the iron-partial density of vibrational states (DOS) of nanocrystalline Fe(90)Zr(7)B(3) (Nanoperm), synthesized by crystallization of an amorphous precursor, for various stages of nanocrystallization separating the DOS of the nanograins from that of the interfaces [S. Stank......, vibrational entropy, and lattice specific heat as the material transforms from amorphous, through nanocrystalline, to fully crystallized state. The reported results shed new light on the previously observed anomalies in the vibrational thermodynamics of nanocrystalline materials....

  3. [Microbiological corrosion of aluminum alloys].

    Science.gov (United States)

    Smirnov, V F; Belov, D V; Sokolova, T N; Kuzina, O V; Kartashov, V R

    2008-01-01

    Biological corrosion of ADO quality aluminum and aluminum-based construction materials (alloys V65, D16, and D16T) was studied. Thirteen microscopic fungus species and six bacterial species proved to be able to attack aluminum and its alloys. It was found that biocorrosion of metals by microscopic fungi and bacteria was mediated by certain exometabolites. Experiments on biocorrosion of the materials by the microscopic fungus Alternaria alternata, the most active biodegrader, demonstrated that the micromycete attack started with the appearance of exudate with pH 8-9 on end faces of the samples.

  4. Aluminum hydroxide issue closure package

    International Nuclear Information System (INIS)

    Bergman, T.B.

    1998-01-01

    Aluminum hydroxide coatings on fuel elements stored in aluminum canisters in K West Basin were measured in July and August 1998. Good quality data was produced that enabled statistical analysis to determine a bounding value for aluminum hydroxide at a 99% confidence level. The updated bounding value is 10.6 kg per Multi-Canister Overpack (MCO), compared to the previously estimated bounding value of 8 kg/MCO. Thermal analysis using the updated bounding value, shows that the MCO generates oxygen concentrate that are below the lower flammability limits during the 40-year interim storage period and are, therefore, acceptable

  5. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  6. Separation of zirconium--hafnium by nitride precipitation

    International Nuclear Information System (INIS)

    Anderson, R.N.; Parlee, N.A.

    1977-01-01

    A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

  7. Packaging material and aluminum. Hoso zairyo to aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Itaya, T [Mitsubishi Aluminum Co. Ltd., Tokyo (Japan)

    1992-02-01

    The present paper introduces aluminum foil packaging materials among the relation between packing materials and aluminum. The characteristics of aluminum foil in the packaging area are in its barrier performance, non-toxicity, tastelessness and odorlessness. Its excellent functions and processibility suit best as functional materials for food, medicine and industrial material packaging. While an aluminum foil may be used as a single packing material as in foils used in homes, many of it as a packaging material are used in combination with adhesives, papers or plastic films, or coated or printed. It is used as composite materials laminated or coated with other materials according to their use for the purpose of complementing the aluminum foil as the base material. Representative method to laminate aluminum foils include the wet lamination, dry lamination, thermally dissolved lamination and extruded lamination. The most important quality requirement in lamination is the adhesion strength, which requires a close attention in selecting the kinds of adhesive, laminating conditions, and aging conditions. 8 figs., 6 tabs.

  8. An assessment of the thermodynamic properties of uranium nitride, plutonium nitride and uranium-plutonium mixed nitride

    International Nuclear Information System (INIS)

    Matsui, T.; Ohse, R.W.

    1986-01-01

    Thermodynamic properties such as vapour pressures, heat capacities and enthalpies of formation for UN(s), PuN(s) and (U, Pu)N(s) are critically evaluated. The equations of the vapour pressures and the heat capacities for the three nitrides are assessed. Thermal functions, and thermodynamic functions for the formation of UN(s), PuN(s) and (U, Pu)N(s), are calculated

  9. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

    Science.gov (United States)

    Chen, Tai-Chou Papo

    The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

  10. The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

    International Nuclear Information System (INIS)

    Mitchell, D.R.G.; Stott, F.H.

    1992-01-01

    A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

  11. Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

    International Nuclear Information System (INIS)

    Anselin, F.

    1966-06-01

    A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

  12. Intragranular Chromium Nitride Precipitates in Duplex and Superduplex Stainless Steel

    OpenAIRE

    Iversen, Torunn Hjulstad

    2012-01-01

    Intragranular chromium nitrides is a phenomenon with detrimental effects on material properties in superduplex stainless steels which have not received much attention. Precipitation of nitrides occurs when the ferritic phase becomes supersaturated with nitrogen and there is insufficient time during cooling for diffusion of nitrogen into austenite. Heat treatment was carried out at between 1060◦C and 1160◦C to study the materials susceptibility to nitride precipitation with...

  13. Corrosion stability of cermets on the base of titanium nitride

    International Nuclear Information System (INIS)

    Kajdash, O.N.; Marinich, M.A.; Kuzenkova, M.A.; Manzheleev, I.V.

    1991-01-01

    Corrosion resistance of titanium nitride and its cermets in 5% of HCl, 7% of HNO 3 , 10% of H 2 SO 4 is studied. It is established that alloys TiN-Ni-Mo alloyed with chromium (from 10 to 15%) possess the highest corrosion resistance. Cermet TiN-Cr has the higher stability than titanium nitride due to formation of binary nitride (Ti, Cr)N

  14. Heated Aluminum Tanks Resist Corrosion

    Science.gov (United States)

    Johnson, L. E.

    1983-01-01

    Simple expedient of heating foam-insulated aluminum alloy tanks prevents corrosion by salt-laden moisture. Relatively-small temperature difference between such tank and surrounding air will ensure life of tank is extended by many years.

  15. Paramagnetic centers in nanocrystalline TiC/C system

    International Nuclear Information System (INIS)

    Guskos, N.; Bodziony, T.; Maryniak, M.; Typek, J.; Biedunkiewicz, A.

    2008-01-01

    Electron paramagnetic resonance is applied to study the defect centers in nanocrystalline titanium carbide dispersed in carbon matrix (TiC x /C) synthesized by the non-hydrolytic sol-gel process. The presence of Ti 3+ paramagnetic centers is identified below 120 K along with a minor contribution from localized defect spins coupled with the conduction electron system in the carbon matrix. The temperature dependence of the resonance intensity of the latter signal indicates weak antiferromagnetic interactions. The presence of paramagnetic centers connected with trivalent titanium is suggested to be the result of chemical disorder, which can be further related to the observed anomalous behavior of conductivity, hardness, and corrosion resistance of nanocrystalline TiC x /C

  16. Electrophoretic Nanocrystalline Graphene Film Electrode for Lithium Ion Battery

    International Nuclear Information System (INIS)

    Kaprans, Kaspars; Bajars, Gunars; Kucinskis, Gints; Dorondo, Anna; Mateuss, Janis; Gabrusenoks, Jevgenijs; Kleperis, Janis; Lusis, Andrejs

    2015-01-01

    Graphene sheets were fabricated by electrophoretic deposition method from water suspension of graphene oxide followed by thermal reduction. The formation of nanocrystalline graphene sheets has been confirmed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrochemical performance of graphene sheets as anode material for lithium ion batteries was evaluated by cycling voltammetry, galvanostatic charge-discharge cycling, and electrochemical impedance spectroscopy. Fabricated graphene sheets exhibited high discharge capacity of about 1120 mAh·g −1 and demonstrated good reversibility of lithium intercalation and deintercalation in graphene sheet film with capacity retention over 85 % after 50 cycles. Results show that nanocrystalline graphene sheets prepared by EPD demonstrated a high potential for application as anode material in lithium ion batteries

  17. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    Science.gov (United States)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  18. Nanocrystalline electrodeposited Ni-Mo-C cathodes for hydrogen production

    International Nuclear Information System (INIS)

    Hashimoto, K.; Sasaki, T.; Meguro, S.; Asami, K.

    2004-01-01

    Tailoring active nickel alloy cathodes for hydrogen evolution in a hot concentrated hydroxide solution was attempted by electrodeposition. The carbon addition to Ni-Mo alloys decreased the nanocrystalline grain size and remarkably enhanced the activity for hydrogen evolution, changing the mechanism of hydrogen evolution. The Tafel slope of hydrogen evolution was about 35 mV per decade. This suggested that the rate-determining step is desorption of adsorbed hydrogen atoms by recombination. As was distinct from the binary Ni-Mo alloys, after open circuit immersion, the overpotential, that is, the activity of nanocrystalline Ni-Mo-C alloys for hydrogen evolution was not changed, indicating the sufficient durability in the practical electrolysis

  19. Grain boundary and triple junction diffusion in nanocrystalline copper

    Energy Technology Data Exchange (ETDEWEB)

    Wegner, M., E-mail: m.wegner@uni-muenster.de; Leuthold, J.; Peterlechner, M.; Divinski, S. V., E-mail: divin@uni-muenster.de [Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Straße 10, D-48149, Münster (Germany); Song, X., E-mail: xysong@bjut.edu.cn [College of Materials Science and Engineering, Beijing University of Technology, 100124 Beijing (China); Wilde, G. [Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Straße 10, D-48149, Münster (Germany); Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, 200444 Shanghai (China)

    2014-09-07

    Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, 〈d〉, of ∼35 and ∼44 nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500⋅D{sub gb} within the temperature interval from 420 K to 470 K.

  20. Effect of power on the growth of nanocrystalline silicon films

    International Nuclear Information System (INIS)

    Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma

    2008-01-01

    Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm -1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity

  1. Effect of power on the growth of nanocrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma [Plasma Processed Materials Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110 012 (India)], E-mail: skumar@mail.nplindia.ernet.in

    2008-08-20

    Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm{sup -1} and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.

  2. Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

    Directory of Open Access Journals (Sweden)

    Junichiro Shiomi

    2016-10-01

    Full Text Available Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

  3. Size dependence of the optical spectrum in nanocrystalline silver

    International Nuclear Information System (INIS)

    Taneja, Praveen; Ayyub, Pushan; Chandra, Ramesh

    2002-01-01

    We report a detailed study of the optical reflectance in sputter-deposited, nanocrystalline silver thin films in order to understand the marked changes in color that occur with decreasing particle size. In particular, samples with an average particle size in the 20 to 35 nm range are golden yellow, while those with a size smaller than 15 nm are black. We simulate the size dependence of the observed reflection spectra by incorporating Mie's theory of scattering and absorption of light in small particles, into the bulk dielectric constant formalism given by Ehrenreich and Philipp [Phys. Rev. 128, 1622 (1962)]. This provides a general method for understanding the reflected color of a dense collection of nanoparticles, such as in a nanocrystalline thin film. A deviation from Mie's theory is observed due to strong interparticle interactions

  4. Chrome - Free Aluminum Coating System

    Science.gov (United States)

    Bailey, John H.; Gugel, Jeffrey D.

    2010-01-01

    This slide presentation concerns the program to qualify a chrome free coating for aluminum. The program was required due to findings by OSHA and EPA, that hexavalent chromium, used to mitigate corrosion in aerospace aluminum alloys, poses hazards for personnel. This qualification consisted of over 4,000 tests. The tests revealed that a move away from Cr+6, required a system rather than individual components and that the maximum corrosion protection required pretreatment, primer and topcoat.

  5. "Ripples" in an Aluminum Pool?

    Science.gov (United States)

    Rohr, James; Wang, Si-Yin; Nesterenko, Vitali F.

    2018-05-01

    Our motivation for this article is for students to realize that opportunities for discovery are all around them. Discoveries that can still puzzle present day researchers. Here we explore an observation by a middle school student concerning the production of what appears to be water-like "ripples" produced in aluminum foil when placed between two colliding spheres. We both applaud and explore the student's reasoning that the ripples were formed in a melted aluminum pool.

  6. Synthesis of Uranium nitride powders using metal uranium powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

    2012-01-01

    Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

  7. Review of actinide nitride properties with focus on safety aspects

    Energy Technology Data Exchange (ETDEWEB)

    Albiol, Thierry [CEA Cadarache, St Paul Lez Durance Cedex (France); Arai, Yasuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    2001-12-01

    This report provides a review of the potential advantages of using actinide nitrides as fuels and/or targets for nuclear waste transmutation. Then a summary of available properties of actinide nitrides is given. Results from irradiation experiments are reviewed and safety relevant aspects of nitride fuels are discussed, including design basis accidents (transients) and severe (core disruptive) accidents. Anyway, as rather few safety studies are currently available and as many basic physical data are still missing for some actinide nitrides, complementary studies are proposed. (author)

  8. Research and development of nitride fuel cycle technology in Japan

    International Nuclear Information System (INIS)

    Minato, Kazuo; Arai, Yasuo; Akabori, Mitsuo; Tamaki, Yoshihisa; Itoh, Kunihiro

    2004-01-01

    The research on the nitride fuel was started for an advanced fuel, (U, Pn)N, for fast reactors, and the research activities have been expanded to minor actinide bearing nitride fuels. The fuel fabrication, property measurements, irradiation tests and pyrochemical process experiments have been made. In 2002 a five-year-program named PROMINENT was started for the development of nitride fuel cycle technology within the framework of the Development of Innovative Nuclear Technologies by the Ministry of Education, Culture, Sports, Science and Technology of Japan. In the research program PROMINENT, property measurements, pyrochemical process and irradiation experiments needed for nitride fuel cycle technology are being made. (author)

  9. Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

    2015-03-15

    A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

  10. Modeling the Gas Nitriding Process of Low Alloy Steels

    Science.gov (United States)

    Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

    2013-07-01

    The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

  11. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  12. Boron nitride encapsulated graphene infrared emitters

    International Nuclear Information System (INIS)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

    2016-01-01

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  13. Boron nitride encapsulated graphene infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

    2016-03-28

    The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

  14. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  15. THz generation from a nanocrystalline silicon-based photoconductive device

    International Nuclear Information System (INIS)

    Daghestani, N S; Persheyev, S; Cataluna, M A; Rose, M J; Ross, G

    2011-01-01

    Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material

  16. Electrochemical passivation behaviour of nanocrystalline Fe 80 Si ...

    Indian Academy of Sciences (India)

    Passivation behaviour of nanocrystalline coating (Fe80Si20) obtained by in situ mechanical alloying route is studied and compared with that of the commercial pure iron and cast Fe80Si20 in sodium borate buffer solution at two different pH values (7.7 and 8.4). The coating reveals single passivation at a pH of 7.7 and ...

  17. A study of the structure and crystallisation of nanocrystalline zirconia

    International Nuclear Information System (INIS)

    Tucker, M.

    1999-12-01

    Nanocrystalline zirconia, prepared via, calcination of the hydroxide, has been studied using a variety of experimental techniques. Two chemical routes, a precipitation and a sol-gel route, were used to prepare the hydroxide. Neutron and X-ray diffraction, EXAFS, NMR and SANS have been used to study the structure and crystallisation, during in-situ and ambient condition measurements. The structural information from the diffraction data has been complimented by the other techniques to provide information on the short, medium and longer range structure of nanocrystalline zirconia. Pure and yttrium doped samples were studied, this enabled the affects of doping and preparation routes to be investigated. The amorphous hydroxide was found to have a, monoclinic-like structure for all samples, independent of preparation route or yttrium content. The crystallisation temperature was lowest for the pure precipitation sample and was increased by the addition of yttrium or by preparation via, the sol-gel route. For the precipitation samples, in addition to the crystallisation temperature being raised, doping with yttrium also had an effect on the size of the crystallites obtained at high temperatures. Due to the different incorporation method of the yttrium into the sol-gel samples the effect on crystallite size and crystallisation temperature, as seen for the precipitation samples, were not evident for the sol-gel samples. The neutron and NMR data clearly show hydrogen remains in the samples well after crystallisation has become evident. The structural picture of nanocrystalline zirconia consisting of small crystallites surrounded by material containing, or terminated by, hydroxyl groups, is supported by all the results and methods used in this thesis. The in-situ and ambient conditions data is combined into a coherent growth picture of the nanocrystalline material from the hydroxide until at high enough temperatures the bulk or polycrystalline material is formed. (author)

  18. Critical currents and fields of disordered nanocrystalline superconductors

    International Nuclear Information System (INIS)

    Yavary, H.; Shahzamanian, M.A.; Rabbani, H.

    2007-01-01

    Full text: There is an enormous effort directed at increasing the upper critical field of the superconducting materials because this upper critical field provides a fundamental limit to the maximum field a magnet system can produce. High-energy particle accelerators and medical resonance imaging body scanners are limited by the for NbTi (10 T). Gigahertz class nuclear-magnetic-resonance and high field laboratory magnets are limited by for Nb 3 Sn (23 T) [1]. However, the values of critical current density are too low for industrial use, possibly because of degraded or nonsuperconducting phases, such as MoS 2 or Mo 2 S 3 , at the grain boundaries or because the pinning site density is not high enough. It has long been known that decreasing the grain size of low-temperature superconducting (LTS) materials, such as Nb 3 Sn, increases the density of flux pinning sites and hence. Nanocrystalline materials are characterized by ultrafine grains and a high density of grain boundaries [2]. Hence nanocrystalline materials can exhibit unusual physical, chemical, and mechanical properties with respect to conventional polycrystalline materials. The purpose of this paper is to investigate the structure of currents and fields in disordered nanocrystalline superconducting materials by the use of quasiclassical many body techniques. The Keldish Greens functions are used to calculate the current density of the system. Since the disorder and microstructure of these nanocrystalline materials are on a sufficiently short length scale as to increase both the density of pinning site and the upper critical field. (authors)

  19. Investigation of microstructure thermal evolution in nanocrystalline Cu

    International Nuclear Information System (INIS)

    Zhou Kai; Li Hui; Pang Jinbiao; Wang Zhu

    2011-01-01

    The microstructure of nanocrystalline Cu prepared by compacting nanoparticles (50-60 nm in diameter) under high pressures has been studied by means of positron lifetime spectroscopy and X-ray diffraction. These nanoparticles were produced by two different methods. We found that there are order regions interior to the grains and disorder regions at the grain boundaries with a wide distribution of interatomic distances. The mean grain sizes of the nanocrystalline Cu samples decrease after being annealed at 900 o C and increase during aging at 180 o C, which are observed by X-ray diffraction, revealing that the atoms exchange between the two regions. The positron lifetime results clearly indicate that the vacancy clusters formed in the annealing process are unstable and decomposed at the aging time below 6 hours. In addition, the partially oxidized surfaces of the nanoparticles hinder grain growth when the samples age at 180 o C, and the vacancy clusters inside the disorder regions, which are related to Cu 2 O, need longer aging time to decompose. The disorder regions remain after the heat treatment in this work, in spite of the grain growth, which will be good for the samples keeping the properties of nanocrystalline material. -- Research highlights: → We use a digital positron lifetime spectrometer correlated with XRD to study the microstructure evolution of nanocrystalline Cu during thermal treatment. → An atomic scale microstructure of grain boundary is characterized. Further, the surface oxidation of the nanoparticles is considered. → The disorder regions remain after the heat treatment in this work, in spite of grain growth.

  20. Stress-induced magnetic anisotropy in nanocrystalline alloys

    International Nuclear Information System (INIS)

    Varga, L.K.; Gercsi, Zs.; Kovacs, Gy.; Kakay, A.; Mazaleyrat, F.

    2003-01-01

    Stress-annealing experiments were extended to both nanocrystalline alloy families, Finemet and Nanoperm (Hitperm), and, for comparison, to amorphous Fe 62 Nb 8 B 30 alloy. For both Finemet and bulk amorphous, stress-annealing results in a strong induced transversal anisotropy (flattening of hysteresis loop) but yields longitudinal induced anisotropy (square hysteresis loop) in Nanoperm and Hitperm. These results are interpreted in terms of back-stress theory

  1. Possible origin of superior corrosion resistance for electrodeposited nanocrystalline Ni

    International Nuclear Information System (INIS)

    Roy, I.; Yang, H.W.; Dinh, L.; Lund, I.; Earthman, J.C.; Mohamed, F.A.

    2008-01-01

    We present here for the first time observations that grain boundaries in electrodeposited (ED) nanocrystalline (nc) Ni are predominantly of Σ3 character. The results presented are based on orientation imaging microscopy (OIM) performed to produce electron backscatter diffraction (EBSD) maps. This large volume fraction of coherent low sigma coincidence site lattice (CSL) boundaries appears to be consistent with the superior corrosion resistance of ED nc-Ni in comparison with its coarse-grained counterpart

  2. Thermoelectric nanocrystalline YbCoSb laser prepared layers

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Zeipl, Radek; Kocourek, Tomáš; Remsa, Jan; Navrátil, Jiří

    2016-01-01

    Roč. 122, č. 3 (2016), s. 1-5, č. článku 155. ISSN 0947-8396 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:68378271 ; RVO:61389013 Keywords : nanocrystalline YbCoSb * thermoelectric layers * pulsed laser deposition Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UMCH-V) Impact factor: 1.455, year: 2016

  3. Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation

    Czech Academy of Sciences Publication Activity Database

    Frgala, Z.; Jašek, O.; Karásková, M.; Zajíčková, L.; Buršíková, V.; Franta, D.; Matějková, Jiřina; Rek, Antonín; Klapetek, P.; Buršík, Jiří

    2006-01-01

    Roč. 56, Suppl. B (2006), s. 1218-1223 ISSN 0011-4626 R&D Projects: GA ČR(CZ) GA202/05/0607 Institutional research plan: CEZ:AV0Z20650511; CEZ:AV0Z20410507 Keywords : nanocrystalline diamond * plasma enhanced chemical vapor deposition * self-bias Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.568, year: 2006

  4. Nanocrystalline SiC film thermistors for cryogenic applications

    Science.gov (United States)

    Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

    2018-02-01

    We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

  5. Quantum transport in boron-doped nanocrystalline diamond

    Czech Academy of Sciences Publication Activity Database

    Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Kindl, Dobroslav; Nesládek, Miloš

    2008-01-01

    Roč. 14, č. 7-8 (2008), s. 161-172 ISSN 0948-1907 R&D Projects: GA ČR GA202/07/0525; GA AV ČR IAA1010404; GA ČR(CZ) GA202/06/0040 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond film * ballistic transport * superconductivity * Josephson’s effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.483, year: 2008

  6. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Sun, S. J.; Varga, M.; Chou, H.; Hsu, H.S.; Kromka, A.; Horák, Pavel

    2015-01-01

    Roč. 394, Nov (2015), s. 477-480 ISSN 0304-8853 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LD14011 EU Projects: European Commission(XE) COST Action MP1202 HINT Institutional support: RVO:68378271 ; RVO:61389005 Keywords : diamond * nonmetallic ferromagnetic materials * fine-particle systems * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.357, year: 2015

  7. Electrodeposition and characterization of nanocrystalline CoNiFe films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Y.; Wang, Q.P. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Cai, C. [School of Chemistry and chemical engineering, Ningxia University, Yinchuan 750021 (China); Yuan, Y.N. [Department of Materials and Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Cao, F.H. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Zhang, Z., E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Zhang, J.Q. [Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027 (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

    2012-02-29

    Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} films have been fabricated using cyclic voltammetry technique from the solutions containing sulfate, then characterized by scanning electron microscopy, X-ray diffraction and vibrating sample magnetometer. Meanwhile, Electrochemical Impedance Spectroscopy technique has been employed to probe into the nucleation/growth behavior of Co{sub 45}Ni{sub 10}Fe{sub 24} films. The results show that, the obtained Co{sub 45}Ni{sub 10}Fe{sub 24} film possesses low coercivity of 973.3 A/m and high saturation magnetic flux density of 1.59 Multiplication-Sign 10{sup 5} A/m. Under the experimental conditions, the nucleation/growth process of Co{sub 45}Ni{sub 10}Fe{sub 24} films is mainly under activation control. With the increase of the applied cathodic potential bias, the charge transfer resistance for CoNiFe deposition decreases exponentially. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} film is obtained using cyclic voltammetry technique. Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} possesses low coercivity of 973.3 A/m. Black-Right-Pointing-Pointer Nanocrystalline Co{sub 45}Ni{sub 10}Fe{sub 24} possesses high saturation magnetic flux density. Black-Right-Pointing-Pointer The nucleation/growth process of CoNiFe films is mainly under activation control. Black-Right-Pointing-Pointer The charge transfer resistance for CoNiFe deposition decreases exponentially.

  8. Nanocrystalline Iron-Cobalt Alloys for High Saturation Indutance

    Science.gov (United States)

    2016-02-24

    film deposited just like the pick-up of a turn-table music player. The contact pads provide the electrical contacts to the starting and end point of...anisotropy using the geometry of the thin toroid. We have shown experimentally that the thin film toroid calculations may be applicable to up to millimeter...thin film as well as bulk devices. 15. SUBJECT TERMS Micromagnetic Calculations, Nanocrystalline cobalt-iron, Thin Film Toroids 16. SECURITY

  9. A Virtual Aluminum Reduction Cell

    Science.gov (United States)

    Zhang, Hongliang; Zhou, Chenn Q.; Wu, Bing; Li, Jie

    2013-11-01

    The most important component in the aluminum industry is the aluminum reduction cell; it has received considerable interests and resources to conduct research to improve its productivity and energy efficiency. The current study focused on the integration of numerical simulation data and virtual reality technology to create a scientifically and practically realistic virtual aluminum reduction cell by presenting complex cell structures and physical-chemical phenomena. The multiphysical field simulation models were first built and solved in ANSYS software (ANSYS Inc., Canonsburg, PA, USA). Then, the methodology of combining the simulation results with virtual reality was introduced, and a virtual aluminum reduction cell was created. The demonstration showed that a computer-based world could be created in which people who are not analysis experts can see the detailed cell structure in a context that they can understand easily. With the application of the virtual aluminum reduction cell, even people who are familiar with aluminum reduction cell operations can gain insights that make it possible to understand the root causes of observed problems and plan design changes in much less time.

  10. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    Science.gov (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Silicon Nitride Antireflection Coatings for Photovoltaic Cells

    Science.gov (United States)

    Johnson, C.; Wydeven, T.; Donohoe, K.

    1984-01-01

    Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

  12. Uncertainty propagation in a multiscale model of nanocrystalline plasticity

    International Nuclear Information System (INIS)

    Koslowski, M.; Strachan, Alejandro

    2011-01-01

    We characterize how uncertainties propagate across spatial and temporal scales in a physics-based model of nanocrystalline plasticity of fcc metals. Our model combines molecular dynamics (MD) simulations to characterize atomic-level processes that govern dislocation-based-plastic deformation with a phase field approach to dislocation dynamics (PFDD) that describes how an ensemble of dislocations evolve and interact to determine the mechanical response of the material. We apply this approach to a nanocrystalline Ni specimen of interest in micro-electromechanical (MEMS) switches. Our approach enables us to quantify how internal stresses that result from the fabrication process affect the properties of dislocations (using MD) and how these properties, in turn, affect the yield stress of the metallic membrane (using the PFMM model). Our predictions show that, for a nanocrystalline sample with small grain size (4 nm), a variation in residual stress of 20 MPa (typical in today's microfabrication techniques) would result in a variation on the critical resolved shear yield stress of approximately 15 MPa, a very small fraction of the nominal value of approximately 9 GPa. - Highlights: → Quantify how fabrication uncertainties affect yield stress in a microswitch component. → Propagate uncertainties in a multiscale model of single crystal plasticity. → Molecular dynamics quantifies how fabrication variations affect dislocations. → Dislocation dynamics relate variations in dislocation properties to yield stress.

  13. XRD and HREM studies of nanocrystalline Cu and Pd

    International Nuclear Information System (INIS)

    Nieman, G.W.; Weertmen, J.R.; Siegel, R.W.

    1991-01-01

    Consolidated powders of nanocrystalline Cu and Pd have been studied by x-ray diffraction (XRD) and high resolution electron microscopy (HREM) as part of an investigation of the mechanical behavior of nanocrystalline pure metals. XRD line broadening measurements were made to estimate rain size, qualitative grain size distribution and average long range strains in a number of samples. Mean grain sized range from 4-60 nm and have qualitatively narrow grain size distributions. Long range lattice strains are of the order of 0.2-3% in consolidated samples. These strains apparently persist and even increase in Cu samples after annealing at 0.35 Tm (498K) for 2h, accompanied by an apparent increase in grain size of ≥2x. Grain size, grain size distribution width and internal strains vary somewhat among samples produced under apparently identical processing conditions. HREM studies show that twins, stacking faults and low-index facets are abundant in as-consolidated nanocrystalline Cu samples. In this paper methodology, results and analysis of XRD and HREM experiments are presented

  14. Size-dependent deformation behavior of nanocrystalline graphene sheets

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhi [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi (China); Huang, Yuhong [College of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, Shaanxi (China); Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Sun, Yunjin [Faculty of Food Science and Engineering, Beijing University of Agriculture, Beijing Key Laboratory of Agricultural Product Detection and Control of Spoilage Organisms and Pesticide Residue, Beijing Laboratory of Food Quality and Safety, Beijing 102206 (China); Xu, Kewei, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi (China); Department of Physics and Opt-electronic Engineering, Xi’an University of Arts and Science, Xi’an 710065, Shaanxi (China); Chu, Paul K., E-mail: paul.chu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

    2015-08-15

    Highlights: • MD simulation is conducted to study the deformation of nanocrystalline graphene. • Unexpectedly, the elastic modulus decreases with the grain size considerably. • But the fracture stress and strain are nearly insensitive to the grain size. • A composite model with grain domains and GBs as two components is suggested. - Abstract: Molecular dynamics (MD) simulation is conducted to study the deformation behavior of nanocrystalline graphene sheets. It is found that the graphene sheets have almost constant fracture stress and strain, but decreased elastic modulus with grain size. The results are different from the size-dependent strength observed in nanocrystalline metals. Structurally, the grain boundaries (GBs) become a principal component in two-dimensional materials with nano-grains and the bond length in GBs tends to be homogeneously distributed. This is almost the same for all the samples. Hence, the fracture stress and strain are almost size independent. As a low-elastic-modulus component, the GBs increase with reducing grain size and the elastic modulus decreases accordingly. A composite model is proposed to elucidate the deformation behavior.

  15. Remediation of arsenic and lead with nanocrystalline zinc sulfide.

    Science.gov (United States)

    Piquette, Alan; Cannon, Cody; Apblett, Allen W

    2012-07-27

    Nanocrystalline (1.7 ± 0.3 nm) zinc sulfide with a specific surface area up to 360 m(2) g(-1) was prepared from the thermal decomposition of a single-source precursor, zinc ethylxanthate. Zinc ethylxanthate decomposes to cubic zinc sulfide upon exposure to temperatures greater than or equal to 125 °C. The resulting zinc sulfide was tested as a water impurity extractant. The target impurities used in this study were As(5+), As(3+), and Pb(2+). The reaction of the nanocrystalline ZnS with Pb(2+) proceeds as a replacement reaction where solid PbS is formed and Zn(2+) is released into the aqueous system. Removal of lead to a level of less than two parts per billion is achievable. The results of a detailed kinetics experiment between the ZnS and Pb(2+) are included in this study. Unlike the instance of lead, both As(5+) and As(3+) adsorb on the surface of the ZnS extractant as opposed to an ion-exchange process. An uptake capacity of > 25 mg g(-1) for the removal of As(5+) is possible. The uptake of As(3+) appears to proceed by a slower process than that of the As(5+) with a capacity of nearly 20 mg g(-1). The nanocrystalline zinc sulfide was extremely successful for the removal of arsenic and lead from simulated oil sand tailing pond water.

  16. Anodized aluminum on LDEF

    Science.gov (United States)

    Golden, Johnny L.

    1993-01-01

    A compilation of reported analyses and results obtained for anodized aluminum flown on the Long Duration Exposure Facility (LDEF) was prepared. Chromic acid, sulfuric acid, and dyed sulfuric acid anodized surfaces were exposed to the space environment. The vast majority of the anodized surface on LDEF was chromic acid anodize because of its selection as a thermal control coating for use on the spacecraft primary structure, trays, tray clamps, and space end thermal covers. Reports indicate that the chromic acid anodize was stable in solar absorptance and thermal emittance, but that contamination effects caused increases in absorptance on surfaces exposed to low atomic oxygen fluences. There were some discrepancies, however, in that some chromic acid anodized specimens exhibited significant increases in absorptance. Sulfuric acid anodized surfaces also appeared stable, although very little surface area was available for evaluation. One type of dyed sulfuric acid anodize was assessed as an optical baffle coating and was observed to have improved infrared absorptance characteristics with exposure on LDEF.

  17. Bonding silicon nitride using glass-ceramic

    International Nuclear Information System (INIS)

    Dobedoe, R.S.

    1995-01-01

    Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

  18. Ion-nitriding of austenitic stainless steels

    International Nuclear Information System (INIS)

    Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

    1995-01-01

    Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

  19. Thermodynamics of silicon nitridation - Effect of hydrogen

    Science.gov (United States)

    Shaw, N. J.; Zeleznik, F. J.

    1982-01-01

    Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

  20. Laterally Vibrating Resonator Based Elasto-Optic Modulation in Aluminum Nitride

    Science.gov (United States)

    2016-08-15

    the adjoining test setup used to probe the devices. Following the design of a laterally vibrating piezoelectric contour...licenses/by/4.0/). [http://dx.doi.org/10.1063/1.4945356] The interaction of acoustic waves with light provides a useful resource to perform optical signal...recent years, several types of acousto-optic interactions have been demonstrated in a wide va- riety of devices, including the use of

  1. Growth of large aluminum nitride single crystals with thermal-gradient control

    Science.gov (United States)

    Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J

    2015-05-12

    In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

  2. Elastic moduli of faceted aluminum nitride nanotubes measured by contact resonance atomic force microscopy

    International Nuclear Information System (INIS)

    Stan, G; Cook, R F; Ciobanu, C V; Thayer, T P; Wang, G T; Creighton, J R; Purushotham, K P; Bendersky, L A

    2009-01-01

    A new methodology for determining the radial elastic modulus of a one-dimensional nanostructure laid on a substrate has been developed. The methodology consists of the combination of contact resonance atomic force microscopy (AFM) with finite element analysis, and we illustrate it for the case of faceted AlN nanotubes with triangular cross-sections. By making precision measurements of the resonance frequencies of the AFM cantilever-probe first in air and then in contact with the AlN nanotubes, we determine the contact stiffness at different locations on the nanotubes, i.e. on edges, inner surfaces, and outer facets. From the contact stiffness we have extracted the indentation modulus and found that this modulus depends strongly on the apex angle of the nanotube, varying from 250 to 400 GPa for indentation on the edges of the nanotubes investigated.

  3. Density functional study of carbon monoxide adsorption on small cationic, neutral, and anionic aluminum nitride clusters

    Science.gov (United States)

    Guo, Ling

    CO adsorption on small cationic, neutral, and anionic (AlN)n (n = 1-6) clusters has been investigated using density functional theory in the generalized gradient approximation. Among various possible CO adsorption sites, an N on-top (onefold coordinated) site is found to be the most favorable one, irrespective of the charge state of the clusters. The adsorption energies of CO on the anionic (AlN)nCO (n = 2-4) clusters are greater than those on the neutral and cationic complexes. The adsorption energies on the cationic and neutral complexes reflect the odd-even oscillations, and the adsorption energies of CO on the cationic (AlN)nCO (n = 5, 6) clusters are greater than those on the neutral and anionic complexes. The adsorption energies for the different charge states decrease with increasing cluster size.

  4. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

    KAUST Repository

    Foronda, Humberto M.; Wu, Feng; Zollner, Christian; Alif, Muhammad Esmed; Saifaddin, Burhan; Almogbel, Abdullah; Iza, Michael; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

    2017-01-01

    temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth

  5. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

    KAUST Repository

    Foronda, Humberto M.

    2017-11-23

    In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.

  6. Optical investigations on the wide bandgap semiconductors diamond and aluminum nitride

    Energy Technology Data Exchange (ETDEWEB)

    Teofilov, Nikolai

    2007-07-01

    In the context of this thesis, new results about optical defects and intrinsic properties of diamond, AlN and AlGaN alloys have been obtained. The main experimental techniques used were low temperature cathodoluminescence and photoluminescence spectroscopy. First, different aspects of intentional and background doping of diamond were discussed. Thus, the most commonly observed green luminescence emission from boron doped HPHT diamonds has been studied by means of temperature dependent CL in a wide temperature range from 10 K to 450 K. One further subject, addressing deep defect nitrogen related luminescence was a study of nitrogen addition in combustion flame grown CVD diamond layers. Two further topics concern intrinsic excitations in diamond, free excitons and electron-hole drops. Several important parameters like the critical density, the critical temperature, and the low-temperature density inside the drops were evaluated. The ground state density of the electron-hole condensate in diamond is about {approx} 42 times larger than that in Si, and the critical temperature takes very high values in the range of 165K.. 173K. Cathodoluminescence investigations on epitaxial wurtzite AlN layers grown on sapphire, SiC, and Si substrates, have shown that although the material is generally of good optical quality, deep level luminescence are still dominating the spectra. Relatively sharp near-band-edge transitions have been observed in all three samples that exhibit significantly reduced line widths for the AlN/sapphire and the AlN/SiC samples. Much broader emission lines in the near band-gap region have been observed for the first time from the AlN sample grown on Si (111) substrate. Temperature dependent CL measurements and numerical line decompositions reveal complicated substructures in the excitonic lines. The temperature dependence of the energy positions and broadening parameters of the transition have been studied and compared with the other materials. Epitaxial AlGaN/AlN heterostructures grown on sapphire, and SiC substrates were investigated by low temperature CL at 10 K. (orig.)

  7. RF plasma nitriding of severely deformed iron-based alloys

    International Nuclear Information System (INIS)

    Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

    2003-01-01

    The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

  8. Plasma nitriding - an eco friendly surface hardening process

    International Nuclear Information System (INIS)

    Mukherjee, S.

    2015-01-01

    Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

  9. Gas evolution behavior of aluminum in mortar

    Energy Technology Data Exchange (ETDEWEB)

    Hashizume, Shuji; Matsumoto, Junko; Banba, Tsunetaka [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1996-10-01

    As a part of study of leaching behavior for solidified dry low level radioactive waste, gas evolution behavior of aluminum in mortar was investigated, and a plan of our research was proposed. The effect of pH on corrosion rate of aluminum, corrosion product, time dependency of corrosion rate of aluminum in mortar, change of corrosion mechanism, the effects of Na, Ca and Cl ions on corrosion rate of aluminum in mortar and corrosion behavior of aluminum when aluminum was used as sacrificed anode in reinforced concrete were previously clarified. Study of the effects of environmental factors such as pH, kind of ions and temperature on gas evolution behavior of aluminum and the effect of aluminum/carbon steel surface ratio no gas evolution behavior of aluminum were planed. (author). 75 refs.

  10. Gas evolution behavior of aluminum in mortar

    International Nuclear Information System (INIS)

    Hashizume, Shuji; Matsumoto, Junko; Banba, Tsunetaka

    1996-10-01

    As a part of study of leaching behavior for solidified dry low level radioactive waste, gas evolution behavior of aluminum in mortar was investigated, and a plan of our research was proposed. The effect of pH on corrosion rate of aluminum, corrosion product, time dependency of corrosion rate of aluminum in mortar, change of corrosion mechanism, the effects of Na, Ca and Cl ions on corrosion rate of aluminum in mortar and corrosion behavior of aluminum when aluminum was used as sacrificed anode in reinforced concrete were previously clarified. Study of the effects of environmental factors such as pH, kind of ions and temperature on gas evolution behavior of aluminum and the effect of aluminum/carbon steel surface ratio no gas evolution behavior of aluminum were planed. (author). 75 refs

  11. Accumulation and recovery of defects in ion-irradiated nanocrystalline gold

    Energy Technology Data Exchange (ETDEWEB)

    Chimi, Y. E-mail: chimi@popsvr.tokai.jaeri.go.jp; Iwase, A.; Ishikawa, N.; Kobiyama, M.; Inami, T.; Okuda, S

    2001-09-01

    Effects of 60 MeV {sup 12}C ion irradiation on nanocrystalline gold (nano-Au) are studied. The experimental results show that the irradiation-produced defects in nano-Au are thermally unstable because of the existence of a large volume fraction of grain boundaries. This suggests a possibility of the use of nanocrystalline materials as irradiation-resistant materials.

  12. Enhanced Activity of Nanocrystalline Zeolites for Selective Catalytic Reduction of NOx

    International Nuclear Information System (INIS)

    Sarah C. Larson; Vicki H. Grassian

    2006-01-01

    Nanocrystalline zeolites with discrete crystal sizes of less than 100 nm have different properties relative to zeolites with larger crystal sizes. Nanocrystalline zeolites have improved mass transfer properties and very large internal and external surface areas that can be exploited for many different applications. The additional external surface active sites and the improved mass transfer properties of nanocrystalline zeolites offer significant advantages for selective catalytic reduction (SCR) catalysis with ammonia as a reductant in coal-fired power plants relative to current zeolite based SCR catalysts. Nanocrystalline NaY was synthesized with a crystal size of 15-20 nm and was thoroughly characterized using x-ray diffraction, electron paramagnetic resonance spectroscopy, nitrogen adsorption isotherms and Fourier Transform Infrared (FT-IR) spectroscopy. Copper ions were exchanged into nanocrystalline NaY to increase the catalytic activity. The reactions of nitrogen dioxides (NO x ) and ammonia (NH 3 ) on nanocrystalline NaY and CuY were investigated using FT-IR spectroscopy. Significant conversion of NO 2 was observed at room temperature in the presence of NH 3 as monitored by FT-IR spectroscopy. Copper-exchanged nanocrystalline NaY was more active for NO 2 reduction with NH 3 relative to nanocrystalline NaY

  13. Nucleation of dislocations from [0 0 1] bicrystal interfaces in aluminum

    International Nuclear Information System (INIS)

    Spearot, Douglas E.; Jacob, Karl I.; McDowell, David L.

    2005-01-01

    It is well established from molecular dynamics simulations that grain boundaries in nanocrystalline samples serve as sources of dislocations. In this work, we use molecular dynamics simulations to study the mechanisms associated with dislocation nucleation from bicrystal [0 0 1] interfaces in aluminum. Three interface misorientations are studied, including the Σ5 (3 1 0) boundary, which has a high density of coincident atomic sites. Molecular dynamics simulations show that full dislocation loops are nucleated from each interface during uniaxial tension. After the second partial dislocation is emitted, a ledge remains within the interface at the intersection of the slip plane and the bicrystal boundary. A disclination dipole model is proposed for the structure of the distorted interface accounting for local lattice rotations and the ledge at the nucleation site

  14. Weld Repair of Thin Aluminum Sheet

    Science.gov (United States)

    Beuyukian, C. S.; Mitchell, M. J.

    1986-01-01

    Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

  15. 77 FR 51825 - Ferrovanadium and Nitrided Vanadium From Russia

    Science.gov (United States)

    2012-08-27

    ... Nitrided Vanadium From Russia Determination On the basis of the record \\1\\ developed in the subject five... order on ferrovanadium and nitrided vanadium from Russia would not be likely to lead to continuation or recurrence of material injury to an industry in the United States within a reasonably foreseeable time. \\1...

  16. Fabrication of functional structures on thin silicon nitride membranes

    NARCIS (Netherlands)

    Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

    A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

  17. Process for producing ceramic nitrides anc carbonitrides and their precursors

    Science.gov (United States)

    Brown, G.M.; Maya, L.

    1987-02-25

    A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

  18. Effect of grain size on corrosion of nanocrystalline copper in NaOH solution

    International Nuclear Information System (INIS)

    Luo Wei; Xu Yimin; Wang Qiming; Shi Peizhen; Yan Mi

    2010-01-01

    Research highlights: → Coppers display an active-passive-transpassive behaviour with duplex passive film. → Grain size variation has little effect on the overall corrosion behaviour of Cu. → Little effect on corrosion may be due to duplex passivation in NaOH solution. → Bulk nanocrystalline Cu show bamboo-like flake corrosion structure. - Abstract: Effect of grain size on corrosion of bulk nanocrystalline copper was investigated using potentiodynamic polarization measurements in 0.1 M NaOH solution. Bulk nanocrystalline copper was prepared by inert gas condensation and in situ warm compress (IGCWC) method. The grain sizes of all bulk nanocrystalline samples were determined to be 48, 68 and 92 nm using X-ray diffraction (XRD). Results showed that bulk coppers displayed an active-passive-transpassive behaviour with duplex passive films. From polycrystalline to nanocrystalline, grain size variation showed little effect on the overall corrosion resistance of copper samples.

  19. Infrared absorption study of hydrogen incorporation in thick nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Tang, C.J.; Neves, A.J.; Carmo, M.C.

    2005-01-01

    We present an infrared (IR) optical absorbance study of hydrogen incorporation in nanocrystalline diamond films. The thick nanocrystalline diamond films were synthesized by microwave plasma-assisted chemical vapor deposition and a high growth rate about 3.0 μm/h was achieved. The morphology, phase quality, and hydrogen incorporation were assessed by means of scanning electron microscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). Large amount of hydrogen bonded to nanocrystalline diamond is clearly evidenced by the huge CH stretching band in the FTIR spectrum. The mechanism of hydrogen incorporation is discussed in light of the growth mechanism of nanocrystalline diamond. This suggests the potential of nanocrystalline diamond for IR electro-optical device applications

  20. In vitro corrosion, cytotoxicity and hemocompatibility of bulk nanocrystalline pure iron

    International Nuclear Information System (INIS)

    Nie, F L; Zheng, Y F; Wei, S C; Hu, C; Yang, G

    2010-01-01

    Bulk nanocrystalline pure iron rods were fabricated by the equal channel angular pressure (ECAP) technique up to eight passes. The microstructure and grain size distribution, natural immersion and electrochemical corrosion in simulated body fluid, cellular responses and hemocompatibility were investigated in this study. The results indicate that nanocrystalline pure iron after severe plastic deformation (SPD) would sustain durable span duration and exhibit much stronger corrosion resistance than that of the microcrystalline pure iron. The interaction of different cell lines reveals that the nanocrystalline pure iron stimulates better proliferation of fibroblast cells and preferable promotion of endothelialization, while inhibits effectively the viability of vascular smooth muscle cells (VSMCs). The burst of red cells and adhesion of the platelets were also substantially suppressed on contact with the nanocrystalline pure iron in blood circulation. A clear size-dependent behavior from the grain nature deduced by the gradual refinement microstructures was given and well-behaved in vitro biocompatibility of nanocrystalline pure iron was concluded.