Nano-scale characterization of white layer in broached Inconel 718

Energy Technology Data Exchange (ETDEWEB)

Chen, Zhe, E-mail: zhe.chen@liu.se [Division of Engineering Materials, Linköping University, 58183 Linköping (Sweden); Colliander, Magnus Hörnqvist; Sundell, Gustav [Department of Physics, Chalmers University of Technology, 41296 Gothenburg (Sweden); Peng, Ru Lin [Division of Engineering Materials, Linköping University, 58183 Linköping (Sweden); Zhou, Jinming [Division of Production and Materials Engineering, Lund University, 22100 Lund (Sweden); Johansson, Sten; Moverare, Johan [Division of Engineering Materials, Linköping University, 58183 Linköping (Sweden)

2017-01-27

The formation mechanism of white layers during broaching and their mechanical properties are not well investigated and understood to date. In the present study, multiple advanced characterization techniques with nano-scale resolution, including transmission electron microscopy (TEM), transmission Kikuchi diffraction (TKD), atom probe tomography (APT) as well as nano-indentation, have been used to systematically examine the microstructural evolution and corresponding mechanical properties of a surface white layer formed when broaching the nickel-based superalloy Inconel 718. TEM observations showed that the broached white layer consists of nano-sized grains, mostly in the range of 20–50 nm. The crystallographic texture detected by TKD further revealed that the refined microstructure is primarily caused by strong shear deformation. Co-located Al-rich and Nb-rich fine clusters have been identified by APT, which are most likely to be γ′ and γ′′ clusters in a form of co-precipitates, where the clusters showed elongated and aligned appearance associated with the severe shearing history. The microstructural characteristics and crystallography of the broached white layer suggest that it was essentially formed by adiabatic shear localization in which the dominant metallurgical process is rotational dynamic recrystallization based on mechanically-driven subgrain rotations. The grain refinement within the white layer led to an increase of the surface nano-hardness by 14% and a reduction in elastic modulus by nearly 10% compared to that of the bulk material. This is primarily due to the greatly increased volume fraction of grain boundaries, when the grain size was reduced down to the nanoscale.

The challenge of screen printed Ag metallization on nano-scale poly-silicon passivated contacts for silicon solar cells

Science.gov (United States)

Jiang, Lin; Song, Lixin; Yan, Li; Becht, Gregory; Zhang, Yi; Hoerteis, Matthias

2017-08-01

Passivated contacts can be used to reduce metal-induced recombination for higher energy conversion efficiency for silicon solar cells, and are obtained increasing attentions by PV industries in recent years. The reported thicknesses of passivated contact layers are mostly within tens of nanometer range, and the corresponding metallization methods are realized mainly by plating/evaporation technology. This high cost metallization cannot compete with the screen printing technology, and may affect its market potential comparing with the presently dominant solar cell technology. Very few works have been reported on screen printing metallization on passivated contact solar cells. Hence, there is a rising demand to realize screen printing metallization technology on this topic. In this work, we investigate applying screen printing metallization pastes on poly-silicon passivated contacts. The critical challenge for us is to build low contact resistance that can be competitive to standard technology while restricting the paste penetrations within the thin nano-scale passivated contact layers. The contact resistivity of 1.1mohm-cm2 and the open circuit voltages > 660mV are achieved, and the most appropriate thickness range is estimated to be around 80 150nm.

Nano-sized Adsorbate Structure Formation in Anisotropic Multilayer System

Science.gov (United States)

Kharchenko, Vasyl O.; Kharchenko, Dmitrii O.; Yanovsky, Vladimir V.

2017-05-01

In this article, we study dynamics of adsorbate island formation in a model plasma-condensate system numerically. We derive the generalized reaction-diffusion model for adsorptive multilayer system by taking into account anisotropy in transfer of adatoms between neighbor layers induced by electric field. It will be found that with an increase in the electric field strength, a structural transformation from nano-holes inside adsorbate matrix toward separated nano-sized adsorbate islands on a substrate is realized. Dynamics of adsorbate island sizes and corresponding distributions are analyzed in detail. This study provides an insight into details of self-organization of adatoms into nano-sized adsorbate islands in anisotropic multilayer plasma-condensate systems.

Formation of Au nano-patterns on various substrates using simplified nano-transfer printing method

Science.gov (United States)

Kim, Jong-Woo; Yang, Ki-Yeon; Hong, Sung-Hoon; Lee, Heon

2008-06-01

For future device applications, fabrication of the metal nano-patterns on various substrates, such as Si wafer, non-planar glass lens and flexible plastic films become important. Among various nano-patterning technologies, nano-transfer print method is one of the simplest techniques to fabricate metal nano-patterns. In nano-transfer printing process, thin Au layer is deposited on flexible PDMS mold, containing surface protrusion patterns, and the Au layer is transferred from PDMS mold to various substrates due to the difference of bonding strength of Au layer to PDMS mold and to the substrate. For effective transfer of Au layer, self-assembled monolayer, which has strong bonding to Au, is deposited on the substrate as a glue layer. In this study, complicated SAM layer coating process was replaced to simple UV/ozone treatment, which can activates the surface and form the -OH radicals. Using simple UV/ozone treatments on both Au and substrate, Au nano-pattern can be successfully transferred to as large as 6 in. diameter Si wafer, without SAM coating process. High fidelity transfer of Au nano-patterns to non-planar glass lens and flexible PET film was also demonstrated.

Effect of Cr on the passive film formation mechanism of steel rebar in saturated calcium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Liu, Ming; Cheng, Xuequn [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China); Li, Xiaogang, E-mail: lixiaogang@ustb.edu.cn [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China); Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang (China); Pan, Yue; Li, Jun [Corrosion and Protection Center, University of Science and Technology Beijing, Beijing, 100083 (China)

2016-12-15

Highlights: • Cr inhibits the formation of passive film at the beginning of its formation. • Cr promotes the formation of a denser and more compact passive film. • The passive film thickness presents a slight increase as the content of Cr goes up. - Abstract: Passive films grow on the surface of Cr-modified steels subjected to saturated Ca(OH){sub 2} solution. Electrochemical techniques, such as measurement of open circuit potentials, polarization curves, and electrochemical impedance spectroscopy combined with X-ray photoelectron spectrometer and auger electron spectroscopy, were applied to study the influence of low Cr content on the passive film formation mechanism of steel rebar in saturated Ca(OH){sub 2} solution. Results show that Cr inhibits the formation of passive film at the beginning of its formation. Corrosion current density decreases and polarization resistance increases with the extension of the immersion time. A stable passive film takes at least three days to form. The passive film resistance of HRB400 carbon steel is higher than that of Cr-modified steels in the early stage of immersion (<72 h). The polarization resistance of Cr-modified steel is larger after a stable passive film is formed (>72 h), and Cr promotes the formation of a denser and more compact passive film. The stable passive film is primarily made up of iron oxides with a thickness of 5–6 nm. Cr are involved in the formation of passive films, thereby resulting in a film that consists of an inner layer that contains Cr–Fe oxides and an outer layer that contains Fe oxides, whose thickness presents a slight increase as the content of Cr increases.

XPS study of the passive layers formed on lead in aqueous nitrate solutions

International Nuclear Information System (INIS)

Uchida, Miho; Okuwaki, Akitsugu

1997-01-01

The analysis of the lead surface immersed in aqueous nitrate solutions by X-ray photoelectron spectroscopy (XPS) shows the formation of passive oxide layer containing nitrogen compound. The oxide layer formed on the lead surface in aqueous ammonium nitrate solution was hydrolyzed and cracked. (author)

Metal Surface Modification for Obtaining Nano- and Sub-Nanostructured Protective Layers

Science.gov (United States)

Ledovskykh, Volodymyr; Vyshnevska, Yuliya; Brazhnyk, Igor; Levchenko, Sergiy

2017-03-01

Regularities of the phase protective layer formation in multicomponent systems involving inhibitors with different mechanism of protective action have been investigated. It was shown that optimization of the composition of the inhibition mixture allows to obtain higher protective efficiency owing to improved microstructure of the phase layer. It was found that mechanism of the film formation in the presence of NaNO2-PHMG is due to deposition of slightly soluble PHMG-Fe complexes on the metal surface. On the basis of the proposed mechanism, the advanced surface engineering methods for obtaining nanoscaled and sub-nanostructured functional coatings may be developed.

Fabrication of nano-sized magnetic tunnel junctions using lift-off process assisted by atomic force probe tip.

Science.gov (United States)

Jung, Ku Youl; Min, Byoung-Chul; Ahn, Chiyui; Choi, Gyung-Min; Shin, Il-Jae; Park, Seung-Young; Rhie, Kungwon; Shin, Kyung-Ho

2013-09-01

We present a fabrication method for nano-scale magnetic tunnel junctions (MTJs), employing e-beam lithography and lift-off process assisted by the probe tip of atomic force microscope (AFM). It is challenging to fabricate nano-sized MTJs on small substrates because it is difficult to use chemical mechanical planarization (CMP) process. The AFM-assisted lift-off process enables us to fabricate nano-sized MTJs on small substrates (12.5 mm x 12.5 mm) without CMP process. The e-beam patterning has been done using bi-layer resist, the poly methyl methacrylate (PMMA)/ hydrogen silsesquioxane (HSQ). The PMMA/HSQ resist patterns are used for both the etch mask for ion milling and the self-aligned mask for top contact formation after passivation. The self-aligned mask buried inside a passivation oxide layer, is readily lifted-off by the force exerted by the probe tip. The nano-MTJs (160 nm x 90 nm) fabricated by this method show clear current-induced magnetization switching with a reasonable TMR and critical switching current density.

Effect of TMAH Etching Duration on the Formation of Silicon Nano wire Transistor Patterned by AFM Nano lithography

International Nuclear Information System (INIS)

Hutagalung, S.D.; Lew, K.C.

2012-01-01

Atomic force microscopy (AFM) lithography was applied to produce nano scale pattern for silicon nano wire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nano patterns. A conductive AFM tip was used to grow the silicon oxide nano patterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nano wire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nano wire transistor structure has been investigated. A completed silicon nano wire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nano wire transistor consists of a silicon nano wire that acts as a channel with source and drain pads. A lateral gate pad with a nano wire head was fabricated very close to the channel in the formation of transistor structures. (author)

Effect of SiO2 passivation overlayers on hillock formation in Al thin films

International Nuclear Information System (INIS)

Kim, Deok-kee

2012-01-01

Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C. - Highlights: ► We examined the effect of SiO 2 overlayers on hillock formation in Al thin films. ► Thin overlayers were not effective in suppressing diffusive flow to the surface. ► A thick overlayer suppressed the diffusive flow from the interior to the surface. ► The stress state of Al films did not vary much with SiO 2 passivation thickness. ► High mechanical strength provided a large driving force for the large grain growth.

Nano-PCMs for passive electronic cooling applications

Science.gov (United States)

Colla, L.; Fedele, L.; Mancin, S.; Buonomo, B.; Ercole, D.; Manca, O.

2015-11-01

The present work aims at investigating a new challenging use of oxide (TiO2, Al2O3, etc.) nanoparticles to enhance the thermal properties: thermal conductivity, specific heat, and latent heat of pure paraffin waxes to obtain a new class of Phase Change Materials (PCMs), the so-called nano-PCMs. The nano-PCMs were obtained by seeding different amounts of oxide nanoparticles in a paraffin wax having a melting temperature of 45°C. The thermophysical properties such as latent heat and thermal conductivity were then measured to understand the effects of the nanoparticles on the thermal properties of both the solid and liquid PCM. Finally, a numerical comparison between the use of the pure paraffin wax and the nano-PCM in a typical electronics passive cooling device was implemented. Numerical simulations were carried out using the Ansys-Fluent 15.0 code. Results in terms of solid and liquid phase temperatures, melting time and junction temperature were reported. Moreover, a comparison with experimental results was also performed.

Enhanced active aluminum content and thermal behaviour of nano-aluminum particles passivated during synthesis using thermal plasma route

International Nuclear Information System (INIS)

Mathe, Vikas L.; Varma, Vijay; Raut, Suyog; Nandi, Amiya Kumar; Pant, Arti; Prasanth, Hima; Pandey, R.K.; Bhoraskar, Sudha V.; Das, Asoka K.

2016-01-01

Graphical abstract: - Highlights: • Synthesis of nano crystalline Al (nAl) using DC thermal plasma reactor. • In situ passivation of nAl by palmitic acid and air. • Enhanced active aluminum content obtained for palmitic acid passivated nAl. • Palmitic acid passivated nAl are quite stable in humid atmospheres. - Abstract: Here, we report synthesis and in situ passivation of aluminum nanoparticles using thermal plasma reactor. Both air and palmitc acid passivation was carried out during the synthesis in the thermal plasma reactor. The passivated nanoparticles have been characterized for their structural and morphological properties using X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques. In order to understand nature of passivation vibrational spectroscopic analysis have been carried out. The enhancement in active aluminum content and shelf life for a palmitic acid passivated nano-aluminum particles in comparison to the air passivated samples and commercially available nano Al powder (ALEX) has been observed. Thermo-gravimetric analysis was used to estimate active aluminum content of all the samples under investigation. In addition cerimetric back titration method was also used to estimate AAC and the shelf life of passivated aluminum particles. Structural, microstructural and thermogravomateric analysis of four year aged passivated sample also depicts effectiveness of palmitic acid passivation.

Enhanced active aluminum content and thermal behaviour of nano-aluminum particles passivated during synthesis using thermal plasma route

Energy Technology Data Exchange (ETDEWEB)

Mathe, Vikas L., E-mail: vlmathe@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007, Maharashtra (India); Varma, Vijay; Raut, Suyog [Department of Physics, Savitribai Phule Pune University, Pune 411007, Maharashtra (India); Nandi, Amiya Kumar; Pant, Arti; Prasanth, Hima; Pandey, R.K. [High Energy Materials Research Lab, Sutarwadi, Pune 411021, Maharashtra (India); Bhoraskar, Sudha V. [Department of Physics, Savitribai Phule Pune University, Pune 411007, Maharashtra (India); Das, Asoka K. [Utkal University, VaniVihar, Bhubaneswar, Odisha 751004 (India)

2016-04-15

Graphical abstract: - Highlights: • Synthesis of nano crystalline Al (nAl) using DC thermal plasma reactor. • In situ passivation of nAl by palmitic acid and air. • Enhanced active aluminum content obtained for palmitic acid passivated nAl. • Palmitic acid passivated nAl are quite stable in humid atmospheres. - Abstract: Here, we report synthesis and in situ passivation of aluminum nanoparticles using thermal plasma reactor. Both air and palmitc acid passivation was carried out during the synthesis in the thermal plasma reactor. The passivated nanoparticles have been characterized for their structural and morphological properties using X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques. In order to understand nature of passivation vibrational spectroscopic analysis have been carried out. The enhancement in active aluminum content and shelf life for a palmitic acid passivated nano-aluminum particles in comparison to the air passivated samples and commercially available nano Al powder (ALEX) has been observed. Thermo-gravimetric analysis was used to estimate active aluminum content of all the samples under investigation. In addition cerimetric back titration method was also used to estimate AAC and the shelf life of passivated aluminum particles. Structural, microstructural and thermogravomateric analysis of four year aged passivated sample also depicts effectiveness of palmitic acid passivation.

Effects of porosity in a model of corrosion and passive layer growth

Directory of Open Access Journals (Sweden)

F.D.A. Aarão Reis

2017-12-01

Full Text Available We introduce a stochastic lattice model to investigate the effects of pore formation in a passive layer grown with products of metal corrosion. It considers that an anionic species diffuses across that layer and reacts at the corrosion front (metal-oxide interface, producing a random distribution of compact regions and large pores, respectively represented by O (oxide and P (pore sites. O sites are assumed to have very small pores, so that the fraction Φ of P sites is an estimate of the porosity, and the ratio between anion diffusion coefficients in those regions is D_r0 and D_r≪1, significant changes are observed in passive layer growth and corrosion front roughness. For small Φ, a slowdown of the growth rate is observed, which is interpreted as a consequence of the confinement of anions in isolated pores for long times. However, the presence of large pores near the corrosion front increases the frequency of reactions at those regions, which leads to an increase in the roughness of that front. This model may be a first step to represent defects in a passive layer which favor pitting corrosion.

Effect of Ultrasonic Nano-Crystal Surface Modification (UNSM) on the Passivation Behavior of Aged 316L Stainless Steel.

Science.gov (United States)

Kim, Ki-Tae; Lee, Jung-Hee; Kim, Young-Sik

2017-06-27

Stainless steels have good corrosion resistance in many environments but welding or aging can decrease their resistance. This work focused on the effect of aging time and ultrasonic nano-crystal surface modification on the passivation behavior of 316L stainless steel. In the case of slightly sensitized 316L stainless steel, increasing the aging time drastically decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film, even though aging did not form chromium carbide and a chromium depletion zone. This behavior is due to the micro-galvanic corrosion between the matrix and carbon segregated area, and this shows the importance of carbon segregation in grain boundaries to the pitting corrosion resistance of stainless steel, in addition to the formation of the chromium depletion zone. UNSM (Ultrasonic Nano Crystal Surface Modification)-treatment to the slightly sensitized 316L stainless steel increased the pitting potential, decreased the passive current density, and increased the resistance of the passive film. However, in the case of heavily sensitized 316L stainless steel, UNSM-treatment decreased the pitting potential, increased the passive current density, and decreased the resistance of the passive film. This behavior is due to the dual effects of the UNSM-treatment. That is, the UNSM-treatment reduced the carbon segregation, regardless of whether the stainless steel 316L was slightly or heavily sensitized. However, since this treatment made mechanical flaws in the outer surface in the case of the heavily sensitized stainless steel, UNSM-treatment may eliminate chromium carbide, and this flaw can be a pitting initiation site, and therefore decrease the pitting corrosion resistance.

Strengthening effect of nano-scaled precipitates in Ta alloying layer induced by high current pulsed electron beam

Energy Technology Data Exchange (ETDEWEB)

Tang, Guangze; Luo, Dian; Fan, Guohua [School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2017-05-01

Highlights: • Ta alloying layer are fabricated by magnetron sputtering and high current pulsed electron beam. • Nano-scaled TaC precipitates forms within the δ-Fe grain after tempering treatment. • The mean diameter of TaC particles is about 5–8 nm. • The hardness of alloying layer increased by over 50% after formation of nano-scaled TaC particle. - Abstract: In this study, the combination of magnetron sputtering and high current pulsed electron beam are used for surface alloying treatment of Ta film on high speed steel. And the Ta alloying layer is about 6 μm. After tempering treatment, TaC phase forms in Ta alloying layer when the treated temperature is over 823 K. Through the TEM and HRTEM observation, a large amount of nano-scaled precipitates (mean diameter 5–8 nm) form within the δ-Fe grain in Ta alloying layer after tempering treatment and these nano-scaled precipitates are confirmed as TaC particles, which contribute to the strengthening effect of the surface alloying layer. The hardness of tempered alloying layer can reach to 18.1 GPa when the treated temperature is 823 K which increase by 50% comparing with the untreated steel sample before surface alloying treatment.

The design of a Li-ion full cell battery using a nano silicon and nano multi-layer graphene composite anode

Science.gov (United States)

Eom, KwangSup; Joshi, Tapesh; Bordes, Arnaud; Do, Inhwan; Fuller, Thomas F.

2014-03-01

In this study, a Si-graphene composite, which is composed of nano Si particles and nano-sized multi-layer graphene particles, and micro-sized multi-layer graphene plate conductor, was used as the anode for Li-ion battery. The Si-graphene electrode showed the high capacity and stable cyclability at charge/discharge rate of C/2 in half cell tests. Nickel cobalt aluminum material (NCA) was used as a cathode in the full cell to evaluate the practicality of the new Si-graphene material. Although the Si-graphene anode has more capacity than the NCA cathode in this designed full cell, the Si-graphene anode had a greater effect on the full-cell performance due to its large initial irreversible capacity loss and continuous SEI formation during cycling. When fluoro-ethylene carbonate was added to the electrolyte, the cyclability of the full cell was much improved due to less SEI formation, which was confirmed by the decreases in the 1st irreversible capacity loss, overpotential for the 1st lithiation, and the resistance of the SEI.

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

Science.gov (United States)

Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

2018-05-01

Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

Directory of Open Access Journals (Sweden)

Zhiwei Zhang

2018-05-01

Full Text Available Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young’s modulus, ultimate tensile strength (UTS, and strain at fracture is observed.

The structures of passivated layers on the single crystals of austenitic steels

International Nuclear Information System (INIS)

Glownia, J.; Banas, J.

1995-01-01

In this work, the conditions of passivation and structure of passive layers on the single crystals in Fe-Cr18-Ni9 alloys are presented. The data shown the differences in the rate of passivation and in stability of passive layers on the (001), (011) and (111) surfaces. The passive layers are composed with the mixture of Fe +2 and Cr +3 oxides and hydroxides. On the (001) surface, the depth of passive layer is greater than on the (111) surface. (author)

Morphology, chemical composition , and electrochemical characteristics of colored titanium passive layers

International Nuclear Information System (INIS)

Jerkiewicz, G.; Hrapovic, S.; Vatankhah, G.; Luan, B.L.

1999-01-01

Brightly and uniformly colored passive layers on Ti are formed by application of AC polarization in aqueous NH 4 BF 4 . A wide spectrum of well-defined colors is accomplished by varying the AC voltage. The passive films are stable in the ambient and in aqueous chloride, perchlorate, sulfate solutions. Optical microscopy and SEM analyses indicate that the passive layers are compact and do not reveal fractures or cracks. XPS characterization of the colored passive layers reveals that their surface-chemical composition depends on the AC polarization voltage. The main constituents of the passive layers are Ti z+ , O 2- , and F - (z varies from 4 to 2 depending on the depth). Fluoride in the film originates form decomposition of NH 4 BF 4 and it accumulates at the inner metal/passive-film interface. XPS depth profiling shows that the higher the AC voltage applied, the thicker the passive film formed. Electrochemical properties of the colored Ti passive layers are determined by recording polarization curves in the -0.8 - 3.2 V, RHE, range and Tafel plots in the hydrogen evolution reaction (HER) region in 1.0 M aqueous H 2 SO 4 solution. The polarization curves show that the corrosion potential of the colored passive layers shifts towards less-negative potential indicating that they are more stable than Ti under the same conditions. The Tafel plots for the HER demonstrate that the passive layers have much higher activity than Ti towards the HER. The Tafel relations reveal new features that can be associated with the partial breakdown/decomposition of the passive layers and with H absorption. (author)

From Gold Nano-particles through Nano-wire to Gold Nano-layers on Substrate

Czech Academy of Sciences Publication Activity Database

Švorčík, V.; Kolská, Z.; Slepička, P.; Siegel, J.; Hnatowicz, Vladimír

2010-01-01

Roč. 2010, G (2010), s. 1-57. ISBN 978-1-61668-009-1 Institutional support: RVO:61389005 Keywords : thin films * Au nano layers * AFM Subject RIV: BM - Solid Matter Physics ; Magnetism https://www.novapublishers.com/catalog/product_info.php?products_id=12909

Deposition of very thin uniform indium sulfide layers over metallic nano-rods by the Spray-Ion Layer Gas Reaction method

Energy Technology Data Exchange (ETDEWEB)

Genduso, G. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Inguanta, R.; Sunseri, C.; Piazza, S. [Dipartimento di Ingegneria Chimica, Gestionale, Informatica, Meccanica, Università di Palermo, Viale delle Scienze, 90100 Palermo (Italy); Kelch, C.; Sáez-Araoz, R. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Zykov, A. [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); present address: Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15,12489 Berlin (Germany); Fischer, Ch.-H., E-mail: fischer@helmholtz-berlin.de [Institut for Heterogeneous Material Systems, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); second affiliation: Free University Berlin, Chemistry Institute, Takustr. 3, D-14195 Berlin (Germany)

2013-12-02

Very thin and uniform layers of indium sulfide were deposited on nickel nano-rods using the sequential and cyclical Spray-ILGAR® (Ion Layer Gas Reaction) technique. Substrates were fabricated by electrodeposition of Ni within the pores of polycarbonate membranes and subsequent chemical dissolution of the template. With respect to the depositions on flat substrates, experimental conditions were modified and optimized for the present geometry. Our results show that nano-rods up to a length of 10 μm were covered uniformly along their full length and with an almost constant film growth rate, thus allowing a good control of the coating thickness; the effect of the deposition temperature was also investigated. However, for high numbers of process steps, i.e. thickness, the films became uneven and crusty, especially at higher temperature, mainly owing to the simultaneous side reaction of the metallic Ni forming nickel sulfide at the surface of the rods. However, such a problem occurs only in the case of reactive nano-rod materials, such as less noble metals. It could be strongly reduced by doubling the spray step duration and thereby sealing the metallic surface before the process step of the sulfurization. Thus, quite smooth, about 100 nm thick coatings could be obtained. - Highlights: • Ni nano-rod substrates were grown within polycarbonate membranes. • We can coat nano-rods uniformly by the Ion Layer Gas Reaction method. • As a model we deposited up to about 100 nm In{sub 2}S{sub 3} on Ni nanorods (250 nm × 10 μm). • Element mapping at insulated rods showed homogenous coating over the full length. • Parameter optimization reduced effectively the Ni sulfide formation.

TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

Directory of Open Access Journals (Sweden)

V. N. Kovalevsky

2010-01-01

Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

Self-Assembly, Pattern Formation and Growth Phenomena in Nano-Systems

CERN Document Server

Nepomnyashchy, Alexander A

2006-01-01

Nano-science and nano-technology are rapidly developing scientific and technological areas that deal with physical, chemical and biological processes that occur on nano-meter scale – one millionth of a millimeter. Self-organization and pattern formation play crucial role on nano-scales and promise new, effective routes to control various nano-scales processes. This book contains lecture notes written by the lecturers of the NATO Advanced Study Institute "Self-Assembly, Pattern Formation and Growth Phenomena in Nano-Systems" that took place in St Etienne de Tinee, France, in the fall 2004. They give examples of self-organization phenomena on micro- and nano-scale as well as examples of the interplay between phenomena on nano- and macro-scales leading to complex behavior in various physical, chemical and biological systems. They discuss such fascinating nano-scale self-organization phenomena as self-assembly of quantum dots in thin solid films, pattern formation in liquid crystals caused by light, self-organi...

Passive Flap Actuation by Reversing Flow in Laminar Boundary Layer Separation

Science.gov (United States)

Parsons, Chase; Lang, Amy; Santos, Leo; Bonacci, Andrew

2017-11-01

Reducing the flow separation is of great interest in the field of fluid mechanics in order to reduce drag and improve the overall efficiency of aircraft. This project seeks to investigate passive flow control using shark inspired microflaps in laminar boundary layer separation. This study aims to show that whether a flow is laminar or turbulent, laminar and 2D or turbulent and 3D, microflaps actuated by reversing flow is a robust means of controlling flow separation. In order to generate a controlled adverse pressure gradient, a rotating cylinder induces separation at a chosen location on a flat plate boundary layer with Re above 10000. Within this thick boundary layer, digital particle image velocimetry is used to map the flow. This research can be used in the future to better understand the nature of the bristling shark scales and its ability to passively control separation. Results show that microflaps successfully actuated due to backflow and that this altered the formation of flow separation. I would like to thank the NSF for REU Grant EEC 1659710 and the Army Research Office for funding this project.

Enhanced Charge Collection with Passivation Layers in Perovskite Solar Cells.

Science.gov (United States)

Lee, Yong Hui; Luo, Jingshan; Son, Min-Kyu; Gao, Peng; Cho, Kyung Taek; Seo, Jiyoun; Zakeeruddin, Shaik M; Grätzel, Michael; Nazeeruddin, Mohammad Khaja

2016-05-01

The Al2 O3 passivation layer is beneficial for mesoporous TiO2 -based perovskite solar cells when it is deposited selectively on the compact TiO2 surface. Such a passivation layer suppressing surface recombination can be formed by thermal decomposition of the perovskite layer during post-annealing. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Passivation of a Metal Contact with a Tunneling Layer

DEFF Research Database (Denmark)

Loozen, X.; Larsen, J.B.; Dross, F.

2011-01-01

The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion...... of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm Al...

Photo-electrochemical and impedance investigation of passive layers grown anodically on titanium alloys

Energy Technology Data Exchange (ETDEWEB)

Oliveira, N.T.C. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Biaggio, S.R. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Piazza, S. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)]. E-mail: piazza@dicpm.unipa.it; Sunseri, C. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy); Di Quarto, F. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)

2004-10-15

The anodic behaviour of two titanium cast alloys, obtained by fusion in a voltaic arc under argon atmosphere, was analyzed in aerated aqueous solutions having different pH values. In all solutions the alloys, having nominal compositions Ti-50Zr at.% and Ti-13Zr-13Nb wt.%, displayed a valve-metal behaviour, owing to the formation of barrier-type oxide films. Passive films, grown potentiodynamically up to about 9 V, were investigated by photocurrent spectroscopy (PCS) and electrochemical impedance spectroscopy (EIS). These passive layers show photoactivity under anodic polarizations, with optical gaps close to 3.55 and 3.25 eV for the binary and the ternary alloy, respectively, independent of the anodizing electrolyte. Films grown on the binary alloy present insulating behaviour and anodic impedance spectra with one time constant; this was interpreted in terms of a single-layer mixed Ti-Zr oxide enriched in Ti with respect to the alloy composition. Also for the ternary alloy the results are consistent with the formation, upon anodization, of Ti-Nb-Zr mixed oxide films, but they display n-type semiconducting behaviour, owing to their poor content of ZrO{sub 2} groups.

Passivation layer of Si/Li ionizing radiation detectors

International Nuclear Information System (INIS)

Vidra, M.; Reznicek, L.

1992-01-01

The proposed passivating layer of Si/Li ionizing radiation detectors ensures a good long-time stability of their volt-ampere characteristics and noise properties. The layer can be applied to protect the detector junction surface in systems cyclically cooled to liquid nitrogen temperature, and in preamplifier feedback optoelectronics to prevent light from entering into the detector. The passivating layer is obtained by evaporating solvent from a cured suspension of boron nitride or aluminium oxide powder in a solution containing piceine and a nonpolar solvent such as toluene. The weight proportions are 1 to 8 parts of piceine, 3 to 9 parts of boron nitride or aluminium oxide, and 1 to 10 parts of the nonpolar solvent. (Z.S.)

Passivation Of High-Temperature Superconductors

Science.gov (United States)

Vasquez, Richard P.

1991-01-01

Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

Nano-beta-tricalcium phosphates synthesis and biodegradation: 2. Biodegradation and apatite layer formation on nano-{beta}-TCP synthesized via microwave treatment

Energy Technology Data Exchange (ETDEWEB)

Abdel-Fattah, Wafa I; Elkhooly, Tarek A, E-mail: nrcfifi@yahoo.co [Department of Biomaterials, National Research Center, Cairo (Egypt)

2010-06-01

The degradation and/or apatite layer precipitation ability of porous {beta}-tricalcium phosphate ({beta}-TCP) samples treated and untreated with microwave radiation during synthesis is investigated. Microwave heating was used to accelerate the formation of CDHA with the Ca/P ratio 1.5 in a shorter processing time which later forms {beta}-TCP at around 650 {sup 0}C. Soaking in simulated body fluid (SBF) for several periods (4, 8, 12, 24, 36, 48, 60 and 72 h) is performed in a cumulative manner. The deposition of an apatite layer is followed through diffuse reflected FT-IR, SEM and EDS. A microwave-treated sample having a smaller particle size than its parent induces the formation of a homogeneous carbonated apatite layer on its surface. On the other hand, the parent {beta}-TCP sample exhibited less ability to induce Ca-P formation after being soaked in SBF. The formation of an apatite layer is attributed to the increase in surface area consequent to reduced particle and grain sizes besides the presence of a minor amount of hydroxyapatite phase in the microwave-treated {beta}-TCP sample. The results prove that it is possible to control the biodegradation and apatite layer formation on sintered {beta}-TCP porous disks through controlling the particle size.

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

International Nuclear Information System (INIS)

Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

2008-01-01

CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

Modifying of Cotton Fabric Surface with Nano-ZnO Multilayer Films by Layer-by-Layer Deposition Method

Directory of Open Access Journals (Sweden)

Sarıışık Merih

2010-01-01

Full Text Available Abstract ZnO nanoparticle–based multilayer nanocomposite films were fabricated on cationized woven cotton fabrics via layer-by-layer molecular self-assembly technique. For cationic surface charge, cotton fabrics were pretreated with 2,3-epoxypropyltrimethylammonium chloride (EP3MAC by pad-batch method. XPS and SEM were used to examine the deposited nano-ZnO multilayer films on the cotton fabrics. The nano-ZnO films deposited on cotton fabrics exhibited excellent antimicrobial activity against Staphylococcus aureus bacteria. The results also showed that the coated fabrics with nano-ZnO multilayer films enhanced the protection of cotton fabrics from UV radiation. Physical tests (tensile strength of weft and warp yarns, air permeability and whiteness values were performed on the fabrics before and after the treatment with ZnO nanoparticles to evaluate the effect of layer-by-layer (LbL process on cotton fabrics properties.

Strengthening of the RAFMS RUSFER-EK181 through nano structuring surface layers

Energy Technology Data Exchange (ETDEWEB)

Panin, A.; Melnikova, E.A. [Tomsk State Univ., lnstitute of Strength Physics and Materials Science, SB, RAS (Russian Federation); Chernov, V.M. [Bochvar Institute of Inorganic Materials, Moscow (Russian Federation); Leontieva-Smirnova, M.V. [A.A. Bochvar Research Institute of Inorganic Materials, Moscow (Russian Federation)

2007-07-01

Full text of publication follows: Surface nano-structuring increases yield point and strength of the reduced activation ferritic-martensitic steel (RAFMS ) RUSREF - EK181. Ultrasonic impact treatment was used to produce a nano-structure within the surface layers of the specimens. Using scanning tunnelling microscope reveals a new mechanism of mesoscale-level plastic deformation of nano-structured surface layers of the RAFMS RUSREF - EK181 as doubled spirals of localised-plastic deformation meso-bands. A linear dependence of their sizes on thickness of strengthened layer was obtained. The effect of localised deformation meso-bands on macro-mechanical properties of a material was demonstrated. A certain combination of thermal and mechanical treatment as well as optimum proportion of nano-structured surface layer thickness to thickness of a whole specimen are necessary to achieve maximum strength values. Tests performed at high temperatures in the range from 20 to 700 deg. C shows efficiency of the surface hardening of the RAFMS RUSREF - EK181. The effect of nano-structured surface layer on the character of plastic deformation and mechanical properties of the RAFMS RUSREF - EK181 was considered in the framework of a multilevel model in which loss of shear stability and generation of structural defects occur self-consistently at various scale levels such as nano-, micro-, meso-, and macro-Chessboard like distribution of stresses and misfit deformations was theoretical and experimentally shown to appear at the 'nano-structured surface layer - bulk of material' interface. Zones of compressive normal stresses alternates with zones of tensile normal stresses as on a chessboard. Plastic shear can generate only within local zones of tensile normal stresses. Critical meso-volume of non-equilibrium states required for local structure-phase transformation can be formed within these zones. Whereas within the zones of compressive normal stresses acting from both

Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

International Nuclear Information System (INIS)

Lin, Y-H; Lin, G-R

2012-01-01

The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

Study on the CMP characteristics of a copper passivity layer formed by dipping in an oxidizer

International Nuclear Information System (INIS)

Choi, Youn-Ok; Lee, Woo-Sun; Choi, Gwon-Woo; Lee, Kang-Yeon; Kim, Nam-Oh

2011-01-01

Copper has been the material for ultra-large-scale integrated circuits owing to its excellent electromigration resistance and low electrical resistance. The polishing mechanism of metal chemical mechanical polishing (CMP) has been reported to be a repeated process of passive oxide layer formation through the use of on oxidizer and then the abrasion action of the slurry. However, because copper is softer and more sensitive to corrosion than tungsten, the slurry composition and the polishing mechanism during the copper CMP process may be more complicated. In a general Cu-CMP process, a mixture of an alumina-based slurry and an oxidizer in proper proportion is used in order to form a passive oxide layer such as CuO and CuO 2 . However, a conventional CMP process consumes an unnecessary amount of slurry to formed the passive layer. Therefore, in this paper, we propose a new method. The copper samples were oxidized by dipping in an oxidizer for an appropriate time to minimize the consumption of slurry before the CMP process. Then, we performed the CMP process. In order to compare the polishing characteristics of the copper thin film, we discuss the CMP removal rate and non-uniformity, as well as the microstructure of the surface and a layer cross-section based on a scanning.

Method to grow group III-nitrides on copper using passivation layers

Science.gov (United States)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

2014-06-03

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Formation of carbonaceous nano-layers under high interfacial pressures during lubrication with mineral and bio-based oils

Energy Technology Data Exchange (ETDEWEB)

Baltrus, John P. [U.S. DOE

2014-01-01

In order to better protect steel surfaces against wear under high loads, understanding of chemical reactions between lubricants and metal at high interfacial pressures and elevated temperatures needs to be improved. Solutions at 5 to 20 wt. % of zinc di-2-ethylhexyl dithio phosphate (ZDDP) and chlorinated paraffins (CP) in inhibited paraffinic mineral oil (IPMO) and inhibited soy bean oil (ISBO) were compared on a Twist Compression Tribotester (TCT) at 200 MPa. Microscopy of wear tracks after 10 seconds tribotesting showed much smoother surface profiles than those of unworn areas. X-ray photoelectron spectroscopy (XPS) coupled with Ar-ion sputtering demonstrated that additive solutions in ISBO formed 2–3 times thicker carbon-containing nano-layers compared to IPMO. The amounts of Cl, S or P were unexpectedly low and detectable only on the top surface with less than 5 nm penetration. CP blends in IPMO formed more inorganic chlorides than those in ISBO. It can be concluded that base oils are primarily responsible for the thickness of carbonaceous nano-layers during early stages of severe boundary lubrication, while CP or ZDDP additive contributions are important, but less significant.

Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

International Nuclear Information System (INIS)

Wang, Xiaoping; Wang, Jinye; Wang, Lijun

2016-01-01

A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors.

Science.gov (United States)

Ma, Jiyeon; Yoo, Geonwook

2018-09-01

So far many of research on transition metal dichalcogenides (TMDCs) are based on a bottomgate device structure due to difficulty with depositing a dielectric film on top of TMDs channel layer. In this work, we study different effects of various passivation layers on electrical properties of multilayer MoS2 transistors: spin-coated CYTOP, SU-8, and thermal evaporated MoOX. The SU-8 passivation layer alters device performance least significantly, and MoOX induces positive threshold voltage shift of ~8.0 V due to charge depletion at the interface, and the device with CYTOP layer exhibits decreased field-effect mobility by ~50% due to electric dipole field effect of C-F bonds in the end groups. Our results imply that electrical properties of the multilayer MoS2 transistors can be modulated using a passivation layer, and therefore a proper passivation layer should be considered for MoS2 device structures.

Micro and nano devices in passive millimetre wave imaging systems

Science.gov (United States)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

Nanomanufacturing : nano-structured materials made layer-by-layer.

Energy Technology Data Exchange (ETDEWEB)

Cox, James V.; Cheng, Shengfeng; Grest, Gary Stephen; Tjiptowidjojo, Kristianto (University of New Mexico); Reedy, Earl David, Jr.; Fan, Hongyou; Schunk, Peter Randall; Chandross, Michael Evan; Roberts, Scott A.

2011-10-01

Large-scale, high-throughput production of nano-structured materials (i.e. nanomanufacturing) is a strategic area in manufacturing, with markets projected to exceed $1T by 2015. Nanomanufacturing is still in its infancy; process/product developments are costly and only touch on potential opportunities enabled by growing nanoscience discoveries. The greatest promise for high-volume manufacturing lies in age-old coating and imprinting operations. For materials with tailored nm-scale structure, imprinting/embossing must be achieved at high speeds (roll-to-roll) and/or over large areas (batch operation) with feature sizes less than 100 nm. Dispersion coatings with nanoparticles can also tailor structure through self- or directed-assembly. Layering films structured with these processes have tremendous potential for efficient manufacturing of microelectronics, photovoltaics and other topical nano-structured devices. This project is designed to perform the requisite R and D to bring Sandia's technology base in computational mechanics to bear on this scale-up problem. Project focus is enforced by addressing a promising imprinting process currently being commercialized.

Electrodeposition of nano-sized bismuth on copper foil as electrocatalyst for reduction of CO{sub 2} to formate

Energy Technology Data Exchange (ETDEWEB)

Lv, Weixin; Zhou, Jing; Bei, Jingjing [School of Chemistry and Chemical Engineering, Yancheng Institute of Technology, Yancheng, 224051 (China); Zhang, Rui, E-mail: zhangrui@ycit.cn [School of Chemistry and Chemical Engineering, Yancheng Institute of Technology, Yancheng, 224051 (China); Wang, Lei [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People’s Republic of China, Heilongjiang University, Harbin, 150080 (China); Xu, Qi [School of Chemistry and Chemical Engineering, Yancheng Institute of Technology, Yancheng, 224051 (China); Wang, Wei, E-mail: wangw@ycit.edu.cn [School of Chemistry and Chemical Engineering, Yancheng Institute of Technology, Yancheng, 224051 (China)

2017-01-30

Highlights: • Bi/Cu electrode was prepared by depositing nano-sized Bi catalyst on Cu foil. • The Bi/Cu electrode can reduce CO{sub 2} to formate with a low overpotential. • The energy efficiency for reduction of CO{sub 2} to formate can reach to 50%. • A Tafel slope of 128 mV decade{sup −1} was observed for producing formate. - Abstract: Electrochemical reduction of carbon dioxide (CO{sub 2}) to formate is energetically inefficient because high overpotential is required for reduction of CO{sub 2} to formate on most traditional catalysts. In this paper, a novel nano-sized Bi-based electrocatalyst deposited on a Cu foil has been synthesized, which can be used as a cathode for electrochemical reduction of CO{sub 2} to formate with a low overpotential (0.69 V) and a high selectivity (91.3%). The electrocatalyst can show excellent catalytic performance toward reduction of CO{sub 2} which can probably be attributed to the nano-sized structure and the surface oxide layer. The energy efficiency for reduction of CO{sub 2} to formate can reach to 50% when an Ir{sub x}Sn{sub y}Ru{sub z}O{sub 2}/Ti electrode is used as anode, it is one of the highest values found in the literatures and very practicable for sustainable fuel synthesis.

Stimulated transformation in nano-layered composites with Se0.6Te0.4

International Nuclear Information System (INIS)

Malyovanik, M.; Shipljak, M.; Cheresnya, V.; Ivan, I.; Csik, A.; Kokenyesi, S.; Debrecen Univ.

2005-01-01

Complete text of publication follows. The main types of the photo-induced structural transformations (PST) in chalcogenide glasses and amorphous layers can be systematized as i) structural transformations within amorphous phase, ii) photo-induced crystallization or amorphyzation, iii) photo-induced mass transport. These main known types of PST can be further detailed, for example concerning photo-induced anisotropy, photo- bleaching, etc., and are widely investigated. But the fundamentals of these effects even in the most known compositions like AsSe, As 2 S 3 are not clear, especially for the nanostructures, where the possible cluster formation, size restrictions and interface conditions may essentially influence the parameters of the material. Furthermore, the basic applied problem related to the PST consists of the possibility of digital or analog optical information storage, phase change memory, fabrication of elements for optics and photonics. These applications require determined spectral and temperature range of functioning, increased sensitivity, transformation rates and stability of the memory at the same time. The realization of such requirements can be expected in nanosized objects made of chalcogenides due to the suitable change of thermodynamical parameters, conductivity, optical and other characteristics. The establishment of correlations between the compositional modulation at nanoscale-dimensions (3-10 nm) in Se 0.6 Te 0.4 and the changes of the optical and electrical parameters as well as the possible improvement of optical recording process in comparison with homogeneous Se 0.6 Te 0.4 films were the aims of the present work. Two types of nano-multilayers, namely Se 0.6 Te 0.4 /SiO x and Se 0.6 Te 0.4 /As 2 S 3 were investigated with respect to the thermo- or light-stimulated structural transformations, since they strongly di r by the possibility of intermixing or crystallization in a steady-state process of heating or laser illumination. Photo

A New Nano-Chitosan Irrigant with Superior Smear Layer Removal and Penetration

Directory of Open Access Journals (Sweden)

Mohammad Kassaee

2016-07-01

Full Text Available Our primary objective was to measure root canal penetrations of aqueous antibacterial nano-chitosan (Nano-CS, for the first time. The second objective was to compare and contrast such penetrations to those of chitosan (CS itself, as well as sodium hypochlorite (NaOCl, chlorhexidine (CHX and ethylenediamintetraacetic acid (EDTA, at the routinely used concentrations. Molar roots were split longitudinally by a rotary diamond saw. Nano-CS was made by dissolving CS in acetic acid and adding tripolyphosphate (TPP, followed by a freeze-drying process. Dentin penetrations are estimated through measurements of sessile contact angles. Penetrations of the probed irrigants were assessed as inverse functions of their sessile contact angles. Accordingly, all Nano-CS solutions showed smaller sessile angles compared to those of NaOCl, CS, and EDTA samples. Hence, Nano-CS appeared to be a superior irrigant for demonstrating a higher penetration than the latter three. It fell only behind CHX, yet, the superb chelating ability of Nano-CS enabled it to remove smear layer to a larger extend than all of our other irrigants including CHX. Nano-CS could be considered as a new irrigant. Higher penetration was its main advantage over CS, and commercial NaOCl, and EDTA. This was verified by  the smaller sessile contact angle of Nano-CS. Anticipated chelating effect of Nano-CS could anchor more efficient removal of smear layer. This was another advantage of Nano-CS over other irrigants including CHX. Other advantages of Nano-CS included its reported biocompatibility, biodegradability and antibacterial effects. Commercialization of Nano-CS was deemed in the near horizon.

Characterization of boundary layer thickness of nano fluid ZrO_2 on natural convection process

International Nuclear Information System (INIS)

V-Indriati Sri Wardhani; Henky P Rahardjo

2015-01-01

Cooling system is highly influenced by the process of convection heat transfer from the heat source to the cooling fluid. The cooling fluid usually used conventional fluid such as water. Cooling system performance can be improved by using fluids other than water such as nano fluid that is made from a mixture of water and nano-sized particles. Researchers at BATAN Bandung have made nano fluid ZrO_2 from local materials, as well as experimental equipment for studying the thermohydraulic characteristics of nano fluid as the cooling fluid. In this study, thermohydraulic characteristics of nano fluid ZrO_2 are observed through experimentation. Nano fluid ZrO_2 is made from a mixture of water with ZrO_2 nano-sized particles of 10-7-10-9 nm whose concentration is 1 g/liter. This nano fluid is used as coolant in the cooling process of natural convection. The natural convection process depends on the temperature difference between heat source and the cooling fluid, which occur in the thermal boundary layer. Therefore it is necessary to study the thermal boundary layer thickness of nano fluid ZrO_2, which is also able to determine the local velocity. Experimentations are done with several variation of the heater power and then the temperature are measured at several horizontal points to see the distribution of the temperatures. The temperature distribution measurement results can be used to determine the boundary layer thickness and flow rate. It is obtained that thermal boundary layer thickness and velocity of nano fluid ZrO_2 is not much different from the conventional fluid water. (author)

Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Vermang, Bart, E-mail: Bart.Vermang@angstrom.uu.se [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); ESAT-KU Leuven, University of Leuven, Leuven 3001 (Belgium); Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika [Ångström Solar Center, University of Uppsala, Uppsala 75121 (Sweden); Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf [Plasma & Coatings Physics, University of Linköping, Linköping 58183 (Sweden); Kotipalli, Ratan; Henry, Frederic; Flandre, Denis [ICTEAM/IMNC, Université Catholique de Louvain, Louvain-la-Neuve 1348 (Belgium)

2015-05-01

Al{sub 2}O{sub 3} rear surface passivated ultra-thin Cu(In,Ga)Se{sub 2} (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al{sub 2}O{sub 3} layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm{sup 2}; as compared to equivalent CIGS solar cells with a standard back contact. - Highlights: • Proof-of-principle ultra-thin CIGS solar cells have been fabricated. • The cells have Mo nano-particles (NPs) as local rear contacts. • An Al{sub 2}O{sub 3} film passivates the CIGS rear surface between these nano-particles. • [Ga]/([Ga] + [In]) grading is used to reduce Mo-NP/CIGS interface recombination.

Electrochemically formed passive layers on titanium - preparation and biocompatibility assessment in Hank's balanced salt solution

International Nuclear Information System (INIS)

Zhao, B.; Jerkiewicz, G.

2006-01-01

Uniform and crack-free passive layers on Ti are prepared using AC voltage in 7.5 wt.% aq. NH 4 ·BF 4 at 25 o C. The passive layers possess coloration (wide spectrum of colors) that depends on the experimental conditions. The biocompatibility of such prepared passive layers is evaluated using corrosion science and analytical techniques. Their corrosion behavior, Ti-ion release, surface roughness, and wettability in Hank's Balanced Salt Solution (HBSS) at 37 o C are the main focus of this work. Open-circuit potential and polarization measurements demonstrate that the corrosion potential (E corr ) of the passive layers becomes more positive than that of the untreated Ti. The value of E corr increases as we increase the AC voltage (VAC). Their corrosion rate (CR) is lower than that of the untreated Ti, and they reduced the Ti-ion release level from 230 to 15 ppb. An increase in the AC voltage frequency (f) leads to a slightly higher level of the Ti-ion release (∼50 ppb). Surface profilometry, optical microscopy, and scanning electron microscopy (SEM) analyses show that prolonged exposure of the passive layers to HBSS results in changes to their surface topography. The passive layers prepared by the application of AC voltage are rougher and more hydrophilic than the untreated Ti. Our methodology of preparing biocompatible passive layers on Ti might be applied as a new surface treatment procedure for Ti implants. (author)

Formation of double layers

International Nuclear Information System (INIS)

Leung, P.; Wong, A.Y.; Quon, B.H.

1981-01-01

Experiments on both stationary and propagating double layers and a related analytical model are described. Stationary double layers were produced in a multiple plasma device, in which an electron drift current was present. An investigation of the plasma parameters for the stable double layer condition is described. The particle distribution in the stable double layer establishes a potential profile, which creates electron and ion beams that excite plasma instabilities. The measured characteristics of the instabilities are consistent with the existence of the double layer. Propagating double layers are formed when the initial electron drift current is large. Ths slopes of the transition region increase as they propagate. A physical model for the formation of a double layer in the experimental device is described. This model explains the formation of the low potential region on the basis of the space charge. This space charge is created by the electron drift current. The model also accounts for the role of ions in double layer formation and explains the formation of moving double layers. (Auth.)

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

International Nuclear Information System (INIS)

Seo, Masahiro; Yamaya, Tadafumi

2005-01-01

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

Energy Technology Data Exchange (ETDEWEB)

Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: seo@elechem1-mc.eng.hokudai.ac.jp; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)

2005-11-10

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Atomic-layer deposited passivation schemes for c-Si solar cells

NARCIS (Netherlands)

van de Loo, B.W.H.; Macco, B.; Melskens, J.; Verheijen, M.A.; Kessels, W.M.M.E.

2016-01-01

A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5,

Formation of Nano-crystalline Todorokite from Biogenic Mn Oxides

Energy Technology Data Exchange (ETDEWEB)

Feng, X.; Zhu, M; Ginder-Vogel, M; Ni, C; Parikh, S; Sparks, D

2010-01-01

Todorokite, as one of three main Mn oxide phases present in oceanic Mn nodules and an active MnO{sub 6} octahedral molecular sieve (OMS), has garnered much interest; however, its formation pathway in natural systems is not fully understood. Todorokite is widely considered to form from layer structured Mn oxides with hexagonal symmetry, such as vernadite ({delta}-MnO{sub 2}), which are generally of biogenic origin. However, this geochemical process has not been documented in the environment or demonstrated in the laboratory, except for precursor phases with triclinic symmetry. Here we report on the formation of a nanoscale, todorokite-like phase from biogenic Mn oxides produced by the freshwater bacterium Pseudomonas putida strain GB-1. At long- and short-range structural scales biogenic Mn oxides were transformed to a todorokite-like phase at atmospheric pressure through refluxing. Topotactic transformation was observed during the transformation. Furthermore, the todorokite-like phases formed via refluxing had thin layers along the c* axis and a lack of c* periodicity, making the basal plane undetectable with X-ray diffraction reflection. The proposed pathway of the todorokite-like phase formation is proposed as: hexagonal biogenic Mn oxide {yields} 10-{angstrom} triclinic phyllomanganate {yields} todorokite. These observations provide evidence supporting the possible bio-related origin of natural todorokites and provide important clues for understanding the transformation of biogenic Mn oxides to other Mn oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano-crystalline OMS materials for use in practical applications.

Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide.

Science.gov (United States)

Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

2017-12-01

In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

Science.gov (United States)

Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

2017-12-01

In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

Science.gov (United States)

Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

2015-05-20

In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

Science.gov (United States)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-24

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al 2 O 3 , considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al 2 O 3 -passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

Science.gov (United States)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-01

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Formation of DNA-network embedding ferromagnetic Cobalt nano-particles

Science.gov (United States)

Kanki, Teruo; Tanaka, Hidekazu; Shirakawa, Hideaki; Sacho, Yu; Taniguchi, Masateru; Lee, Hea-Yeon; Kawai, Tomoji; Kang, Nam-Jung; Chen, Jinwoo

2002-03-01

Formation of DNA-network embedding ferromagnetic Cobalt nano-particles T. Kanki, Hidekazu. Tanaka, H. Shirakawa, Y. Sacho, M. Taniguchi, H. Lee, T. Kawai The Institute of Scientific and Industrial Research, Osaka University, Japan and Nam-Jung Kang, Jinwoo Chen Korea Advanced Institute of Science and Technology (KAIST), Korea DNA can be regarded as a naturally occurring and highly specific functional biopolymer and as a fine nano-wire. Moreover, it was found that large-scale DNA networks can be fabricated on mica surfaces. By using this network structure, we can expect to construct nano-scale assembly of functional nano particle, for example ferromagnetic Co nano particles, toward nano scale spin-electronics based on DNA circuits. When we formed DNA network by 250mg/ml DNA solution of poly(dG)-poly(dC) including ferromagnetic Co nano particles (diameter of 12nm), we have conformed the DNA network structure embedding Co nano-particles (height of about 12nm) by atomic force microscopy. On the other hand, we used 100mg/ml DNA solution, DNA can not connect each other, and many Co nano-particles exist without being embedded.

Comparison on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fibre lasers

Science.gov (United States)

Yang, Chun-Yu; Lin, Yung-Hsiang; Wu, Chung-Lun; Cheng, Chih-Hsien; Tsai, Din-Ping; Lin, Gong-Ru

2018-06-01

Comparisons on exfoliated graphene nano-sheets and triturated graphite nano-particles for mode-locking the Erbium-doped fiber lasers (EDFLs) are performed. As opposed to the graphite nano-particles obtained by physically triturating the graphite foil, the tri-layer graphene nano-sheets is obtained by electrochemically exfoliating the graphite foil. To precisely control the size dispersion and the layer number of the exfoliated graphene nano-sheet, both the bias of electrochemical exfoliation and the speed of centrifugation are optimized. Under a threshold exfoliation bias of 3 volts and a centrifugation at 1000 rpm, graphene nano-sheets with an average diameter of 100  ±  40 nm can be obtained. The graphene nano-sheets with an area density of 15 #/µm2 are directly imprinted onto the end-face of a single-mode fiber made patchcord connector inside the EDFL cavity. Such electrochemically exfoliated graphene nano-sheets show comparable saturable absorption with standard single-graphene and perform the self-amplitude modulation better than physically triturated graphite nano-particles. The linear transmittance and modulation depth of the inserted graphene nano-sheets are 92.5% and 53%, respectively. Under the operation with a power gain of 21.5 dB, the EDFL can be passively mode-locked to deliver a pulsewidth of 454.5 fs with a spectral linewidth of 5.6 nm. The time-bandwidth product of 0.31 is close to the transform limit. The Kelly sideband frequency spacing of 1.34 THz is used to calculate the chirp coefficient as  ‑0.0015.

Application of various surface passivation layers in solar cells

International Nuclear Information System (INIS)

Lee, Ji Youn; Lee, Soo Hong

2004-01-01

In this work, we have used different techniques for surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layers have been investigated both on phosphorus non-diffused p-type Float Zone (FZ) silicon wafers and on diffused emitters (100 Ω/□ and 40 Ω/□). CTO/SiN 1 passivates very well not only on a non-diffused surface (τ eff = 1361 μs) but also on an emitter (τ eff = 414 μs). However, we concluded that RTO/SiN 1 and RTO/SiN 2 stacks were more suitable than CTO/SiN stacks for surface passivation in solar cells since those stacks had relatively good passivation qualities and suitable optical reflections. RTO/SiN 1 for rear-surface passivation and RTO/SiN 2 for front-surface passivation were applied to the fabrication of solar cells. We achieved efficiencies of 18.5 % and 18.8 % on 0.5 Ω-cm (FZ) silicon with planar and textured front surfaces, respectively. An excellent open circuit voltage (V oc ) of 675.6 mV was obtained for the planar cell.

Effect of the reinforced boron carbide particulate content of AA6061 alloy on formation of the passive film in seawater

International Nuclear Information System (INIS)

Katkar, V.A.; Gunasekaran, G.; Rao, A.G.; Koli, P.M.

2011-01-01

Highlights: → Presence of boron carbide increases the corrosion rate of A6061 alloy in seawater. → Increasing the B 4 C content decreases passive layer thickness. → Passive films formed on A6061 and its B 4 C composites are n-type semiconductors. - Abstract: The effect of boron carbide (B 4 C) reinforcement on the corrosion of AA6061 alloy was studied by investigating passive films formed in seawater. The higher passive current and its potential-dependence for these composites indicated formation of porous passive film. Electrochemical impedance spectroscopy (EIS) graph suggests that the alloy surface is partly or totally active. The formed passive film is n-type semiconductor junction in nature. The difference between corrosion potential (E corr ) and potential at zero charge (PZC) suggests that the chloride ions responsible for film breakdown exist within the passive film. A suitable mechanism is proposed for the passive film breakdown.

Determination of standard molar enthalpies of formation of SrMoO4 micro/nano structures

International Nuclear Information System (INIS)

Guo, Yunxiao; Fan, Gaochao; Huang, Zaiyin; Sun, Jilong; Wang, Lude; Wang, Tenghui; Chen, Jie

2012-01-01

Graphical abstract: Schematic illustration of thermochemical cycle between the nano and bulk reaction systems. Highlights: ► A thermochemical cycle was designed. ► Relationship of standard molar enthalpies of formation between micro/nano and bulk SrMoO 4 was gained. ► Microcalorimetry was used as a supplementary technology. ► Standard molar enthalpies of formation of the synthesized micro/nano SrMoO 4 were obtained. ► This novel approach can be used to other micro/nano materials. - Abstract: SrMoO 4 micro/nano structures were prepared by a simple reverse microemulsion method and were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscope (SEM). In order to associate standard molar enthalpies of formation of nano SrMoO 4 with bulk SrMoO 4 , the relationship of them was obtained through designing a thermochemical cycle according to thermodynamic potential function method. Combined with microcalorimetry, the standard molar enthalpies of formation of the synthesized micro/nano SrMoO 4 at 298.15 K were gained in this paper. And the variation of standard molar enthalpies of formation of micro/nano SrMoO 4 with different morphologies and sizes was discussed.

Electrostatic force microscopy and electrical isolation of etched few-layer graphene nano-domains

Energy Technology Data Exchange (ETDEWEB)

Hunley, D. Patrick; Sundararajan, Abhishek; Boland, Mathias J.; Strachan, Douglas R., E-mail: doug.strachan@uky.edu [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506 (United States)

2014-12-15

Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×10{sup 12} Ω with a corresponding gap resistivity greater than about 3×10{sup 14} Ω⋅nm. This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconnects, and nanoribbons.

Electrostatic force microscopy and electrical isolation of etched few-layer graphene nano-domains

International Nuclear Information System (INIS)

Hunley, D. Patrick; Sundararajan, Abhishek; Boland, Mathias J.; Strachan, Douglas R.

2014-01-01

Nanostructured bi-layer graphene samples formed through catalytic etching are investigated with electrostatic force microscopy. The measurements and supporting computations show a variation in the microscopy signal for different nano-domains that are indicative of changes in capacitive coupling related to their small sizes. Abrupt capacitance variations detected across etch tracks indicates that the nano-domains have strong electrical isolation between them. Comparison of the measurements to a resistor-capacitor model indicates that the resistance between two bi-layer graphene regions separated by an approximately 10 nm wide etch track is greater than about 1×10 12  Ω with a corresponding gap resistivity greater than about 3×10 14  Ω⋅nm. This extremely large gap resistivity suggests that catalytic etch tracks within few-layer graphene samples are sufficient for providing electrical isolation between separate nano-domains that could permit their use in constructing atomically thin nanogap electrodes, interconnects, and nanoribbons

Multi-level single mode 2D polymer waveguide optical interconnects using nano-imprint lithography

NARCIS (Netherlands)

Khan, M.U.; Justice, J.; Petäjä, J.; Korhonen, T.; Boersma, A.; Wiegersma, S.; Karppinen, M.; Corbett, B.

2015-01-01

Single and multi-layer passive optical interconnects using single mode polymer waveguides are demonstrated using UV nano-imprint lithography. The fabrication tolerances associated with imprint lithography are investigated and we show a way to experimentally quantify a small variation in index

Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

International Nuclear Information System (INIS)

Liao, B; Stangl, R; Ma, F; Mueller, T; Lin, F; Aberle, A G; Bhatia, C S; Hoex, B

2013-01-01

We demonstrate that by using a water (H 2 O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al 2 O 3 ) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s −1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al 2 O 3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100–400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance–voltage measurements reveal that the negative fixed charge density near the AlO x /c-Si interface increases from 1.4 × 10 12 to 3.3 × 10 12 cm −2 due to firing, while the midgap interface defect density reduces from 3.3 × 10 11 to 0.8 × 10 11 cm −2 eV −1 . This work demonstrates that direct firing activation of thermal ALD Al 2 O 3 is feasible, which could be beneficial for solar cell manufacturing. (paper)

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

Science.gov (United States)

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Directory of Open Access Journals (Sweden)

Veer Dhaka

2016-01-01

Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

Characterizing the recovery of a solid surface after tungsten nano-tendril formation

Science.gov (United States)

Wright, G. M.; van Eden, G. G.; Kesler, L. A.; De Temmerman, G.; Whyte, D. G.; Woller, K. B.

2015-08-01

Recovery of a flat tungsten surface from a nano-tendril surface is attempted through three techniques; a mechanical wipe, a 1673 K annealing, and laser-induced thermal transients. Results were determined through SEM imaging and elastic recoil detection to assess the helium content in the surface. The mechanical wipe leaves a ∼0.5 μm deep layer of nano-tendrils on the surface post-wipe regardless of the initial nano-tendril layer depth. Laser-induced thermal transients only significantly impact the surface morphology at heat loads of 35.2 MJ/m2 s1/2 or above, however a fully flat or recovered surface was not achieved for 100 transients at this heat load despite reducing the helium content by a factor of ∼7. A 1673 K annealing removes all detectable levels of helium but sub-surface voids/bubbles remain intact. The surface is recovered to a nearly flat state with only some remnants of nano-tendrils re-integrating into the surface remaining.

Characterizing the recovery of a solid surface after tungsten nano-tendril formation

International Nuclear Information System (INIS)

Wright, G.M.; Eden, G.G. van; Kesler, L.A.; De Temmerman, G.; Whyte, D.G.; Woller, K.B.

2015-01-01

Recovery of a flat tungsten surface from a nano-tendril surface is attempted through three techniques; a mechanical wipe, a 1673 K annealing, and laser-induced thermal transients. Results were determined through SEM imaging and elastic recoil detection to assess the helium content in the surface. The mechanical wipe leaves a ∼0.5 μm deep layer of nano-tendrils on the surface post-wipe regardless of the initial nano-tendril layer depth. Laser-induced thermal transients only significantly impact the surface morphology at heat loads of 35.2 MJ/m 2 s 1/2 or above, however a fully flat or recovered surface was not achieved for 100 transients at this heat load despite reducing the helium content by a factor of ∼7. A 1673 K annealing removes all detectable levels of helium but sub-surface voids/bubbles remain intact. The surface is recovered to a nearly flat state with only some remnants of nano-tendrils re-integrating into the surface remaining

Characterizing the recovery of a solid surface after tungsten nano-tendril formation

Energy Technology Data Exchange (ETDEWEB)

Wright, G.M., E-mail: wright@psfc.mit.edu [MIT Plasma Science and Fusion Center, 77 Massachusetts Ave., Cambridge, MA 02139 (United States); Eden, G.G. van [FOM Institute DIFFER, Dutch Institute For Fundamental Energy Research, Association EURATOM-FOM, Trilateral Euregion Cluster, Postbus 1207, 3430BE Nieuwegein (Netherlands); Kesler, L.A. [MIT Plasma Science and Fusion Center, 77 Massachusetts Ave., Cambridge, MA 02139 (United States); De Temmerman, G. [FOM Institute DIFFER, Dutch Institute For Fundamental Energy Research, Association EURATOM-FOM, Trilateral Euregion Cluster, Postbus 1207, 3430BE Nieuwegein (Netherlands); Whyte, D.G.; Woller, K.B. [MIT Plasma Science and Fusion Center, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

2015-08-15

Recovery of a flat tungsten surface from a nano-tendril surface is attempted through three techniques; a mechanical wipe, a 1673 K annealing, and laser-induced thermal transients. Results were determined through SEM imaging and elastic recoil detection to assess the helium content in the surface. The mechanical wipe leaves a ∼0.5 μm deep layer of nano-tendrils on the surface post-wipe regardless of the initial nano-tendril layer depth. Laser-induced thermal transients only significantly impact the surface morphology at heat loads of 35.2 MJ/m{sup 2} s{sup 1/2} or above, however a fully flat or recovered surface was not achieved for 100 transients at this heat load despite reducing the helium content by a factor of ∼7. A 1673 K annealing removes all detectable levels of helium but sub-surface voids/bubbles remain intact. The surface is recovered to a nearly flat state with only some remnants of nano-tendrils re-integrating into the surface remaining.

Direct force-reflecting two-layer approach for passive bilateral teleoperation with time delays

NARCIS (Netherlands)

Heck, D.; Saccon, A.; Beerens, R.; Nijmeijer, H.

2018-01-01

We propose a two-layer control architecture for bilateral teleoperation with communication delays. The controller is structured with an (inner) performance layer and an (outer) passivity layer. In the performance layer, any traditional controller for bilateral teleoperation can be implemented. The

Enhanced performance of C60 N-type organic field-effect transistors using a pentacene passivation layer

International Nuclear Information System (INIS)

Liang Xiaoyu; Cheng Xiaoman; Du Boqun; Bai Xiao; Fan Jianfeng

2013-01-01

We investigated the properties of C 60 -based organic field-effect transistors (OFETs) with a pentacene passivation layer inserted between the C 60 active layer and the gate dielectric. After modification of the pentacene passivation layer, the performance of the devices was considerably improved compared to C 60 -based OFETs with only a PMMA dielectric. The peak field-effect mobility was up to 1.01 cm 2 /(V·s) and the on/off ratio shifted to 10 4 . This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs. (semiconductor devices)

ZnSe passivation layer for the efficiency enhancement of CuInS2 quantum dots sensitized solar cells

International Nuclear Information System (INIS)

Peng, Zhuoyin; Liu, Yueli; Zhao, Yinghan; Chen, Keqiang; Cheng, Yuqing; Kovalev, Valery; Chen, Wen

2014-01-01

Highlights: • ZnSe is employed as passivation layer in CuInS 2 quantum dots sensitized solar cells. • Slight red-shift has been occurred in UV–vis absorption spectra with ZnSe coating. • CuInS 2 based solar cells coated by ZnSe have better efficiency than that of ZnS. • Higher rate of charge transport can be produced after coating with ZnSe. -- Abstract: The effect of ZnSe passivation layer is investigated in the CuInS 2 quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS 2 quantum dot sensitized TiO 2 photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS 2 quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS 2 based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Science.gov (United States)

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Comparative Observation of Silver Nano and Microstructures Deposited from Aerosol and Fog

Directory of Open Access Journals (Sweden)

Zheltova Anna

2017-01-01

Full Text Available A comparative study of the structure and fractal properties of arrays of the silver nano-/micro-particles deposited on the silicon substrate both from the aerosol and fog showed that the form of the silver individual particles and nano-/microstructures greatly depends on the deposition conditions. By passing an aerosol through isopropyl alcohol, the formation of fractal aggregates of the silver nano-/micro-particles both in the air and in alcohol was observed. Deposition of the silver nano-/micro-particles in the atmosphere of the saturated isopropyl alcohol vapours led to formation of fog. Micro-droplets of the silver colloidal solution were deposited on the substrate. The further evaporation of alcohol created the silver nano/microstructures in the form of annular layers. It was found that the concerned annular layers contained silver particles of the same shape in the form of a Crescent (or Janus-nano-/microparticles. The nature of discovered effects is discussed.

Orogenic structural inheritance and rifted passive margin formation

Science.gov (United States)

Salazar Mora, Claudio A.; Huismans, Ritske S.

2016-04-01

Structural inheritance is related to mechanical weaknesses in the lithosphere due to previous tectonic events, e.g. rifting, subduction and collision. The North and South Atlantic rifted passive margins that formed during the breakup of Western Gondwana, are parallel to the older Caledonide and the Brasiliano-Pan-African orogenic belts. In the South Atlantic, 'old' mantle lithospheric fabric resulting from crystallographic preferred orientation of olivine is suggested to play a role during rifted margin formation (Tommasi and Vauchez, 2001). Magnetometric and gravimetric mapping of onshore structures in the Camamu and Almada basins suggest that extensional faults are controlled by two different directions of inherited older Brasiliano structures in the upper lithosphere (Ferreira et al., 2009). In the South Atlantic Campos Basin, 3D seismic data indicate that inherited basement structures provide a first order control on basin structure (Fetter, 2009). Here we investigate the role of structural inheritance on the formation of rifted passive margins with high-resolution 2D thermo-mechanical numerical experiments. The numerical domain is 1200 km long and 600 km deep and represents the lithosphere and the sublithospheric mantle. Model experiments were carried out by creating self-consistent orogenic inheritance where a first phase of orogen formation is followed by extension. We focus in particular on the role of varying amount of orogenic shortening, crustal rheology, contrasting styles of orogen formation on rifted margin style, and the time delay between orogeny and subsequent rifted passive formation. Model results are compared to contrasting structural styles of rifted passive margin formation as observed in the South Atlantic. Ferreira, T.S., Caixeta, J.M., Lima, F.D., 2009. Basement control in Camamu and Almada rift basins. Boletim de Geociências da Petrobrás 17, 69-88. Fetter, M., 2009. The role of basement tectonic reactivation on the structural evolution

Magnetic layering transitions in a polyamidoamine (PAMAM) dendrimer nano-structure: Monte Carlo study

Science.gov (United States)

Ziti, S.; Aouini, S.; Labrim, H.; Bahmad, L.

2017-02-01

We study the magnetic layering transitions in a polyamidoamine (PAMAM) dendrimer nano-structure, under the effect of an external magnetic field. We examine the magnetic properties, of this model of the spin S=1 Ising ferromagnetic in real nanostructure used in several scientific domains. For T=0, we give and discuss the ground state phase diagrams. At non null temperatures, we applied the Monte Carlo simulations giving important results summarized in the form of the phase diagrams. We also analyzed the effect of varying the external magnetic field, and found the layering transitions in the polyamidoamine (PAMAM) dendrimer nano-structure.

Investigation of Thin Layered Cobalt Oxide Nano-Islands on Gold

Science.gov (United States)

Bajdich, Michal; Walton, Alex S.; Fester, Jakob; Arman, Mohammad A.; Osiecki, Jacek; Knudsen, Jan; Vojvodic, Aleksandra; Lauritsen, Jeppe V.

2015-03-01

Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER), but the synergistic effect of contact with gold is yet to be fully understood. The synthesis of three distinct types of thin-layered cobalt oxide nano-islands supported on a single crystal gold (111) substrate is confirmed by combination of STM and XAS methods. In this work, we present DFT+U theoretical investigation of above nano-islands using several previously known structural models. Our calculations confirm stability of two low-oxygen pressure phases: (a) rock-salt Co-O bilayer and (b) wurtzite Co-O quadlayer and single high-oxygen pressure phase: (c) O-Co-O trilayer. The optimized geometries agree with STM structures and calculated oxidation states confirm the conversion from Co2+ to Co3+ found experimentally in XAS. The O-Co-O trilayer islands have the structure of a single layer of CoOOH proposed to be the true active phase for OER catalyst. For that reason, the effect of water on the Pourbaix stabilities of basal planes and edge sites is fully investigated. Lastly, we also present the corresponding OER theoretical overpotentials.

Surface Passivation by Quantum Exclusion Using Multiple Layers

Science.gov (United States)

Hoenk, Michael E. (Inventor)

2015-01-01

A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices.

Polymer-layered silicate nano composite by UV-radiation curing: an original synthesis

International Nuclear Information System (INIS)

Keller, L.; Decker, C.; Zahouily, K.; Miehe-Brendle, J.; Le Meins, J.M.

2004-01-01

Full text.Because of the many hopes which they raise, the nano composite materials are the subject of an increasing number of scientific publications. Indeed, the intimate association of a polymer matrix and silicate nano-platelets leads to the formation of materials having mechanical and barriers properties improved (fire, gas, humidity...). A literature survey shows that these materials are generally produced by a thermal polymerization, which presents two major disadvantages: the use of organic solvents and a great consumption of energy. To overcome such limitations, photo initiated polymerization was chosen to synthesize nano composite materials. By this technology, called UV radiation curing, a solvent-free resin is transformed within seconds into a solid polymer upon exposure to UV-radiation at ambient temperature. The principal objective of this study was to develop photopolymerizable systems with clay particles having a layer structure (phyllosilicates). The clay mineral was made organophilic by treatment with an alkylammonium salt to allow the acrylate resin to penetrate into the expanded galleries. A morphological characterization of the materials obtained was carried out by X-rays diffraction and electronic microscopy transmission. The polymerization of the various resins under the UV exposure was followed in situ by using the real-time infrared spectroscopy (RT-FTIR) and attenuated total reflection (ATR). The results obtained show that the presence of the organo clay does not modify much the polymerization kinetics. The nano composite material thus obtained is transparent, insoluble in the organic solvents and presents improved mechanical properties, compared to the neat resin and the micro composite, for a load factor ranging between 2 and 5%wt. The addition of nanoparticles also makes it possible to reduce efficiently the brightness of coatings UV and finally confers to this material barriers properties higher than that of the photo crosslinked

Anti-reflecting and passivating coatings for silicon solar cells on a basis of SO2 and TiO2 layers

International Nuclear Information System (INIS)

Taurbaev, T.I.; Nikulin, V.Eh.; Shorin, V.F.; Topanov, B.G.; Dikhanbaev, K.K.

2002-01-01

An analysis of influence of passivating layer on performance of anti-reflection coating of solar cells is carried out. The introduction of passivating SiO 2 layer between a frontal surface of the solar cell and TiO 2 +SiO 2 anti-reflection coating increase total reflection. If a thickness of a passivating layer no more than 20 Angstrom an increase of reflection does not exceed 0.5 %. However, for effective passivation the thickness of the passivating layer has to be within 100-1000 Angstrom region, thus the interference contribution of the passivating layer becomes essential and the AC is necessary to calculate as triple system SiO 2 -TiO 2 -SiO 2 . Such the three layers system ensuring average coefficient of reflection less of 3.5 % in a range 0.4-1.1 μm if the thickness of passivating SiO 2 layer no more 200 Angstrom. For solar cells with passivating SiO 2 layer thickness of 100 Angstrom and protective glass of non-interference thickness the single layer AC from TiO 2 allows to receive average value of reflection coefficient for a spectral range 0.4-1.1 μm no more than 9.5 %. The introduction of two additional layers SiO 2 and TiO 2 allows to reduce this value on 2.0-3.0 %. The comparison of calculation and experimental results is given. (author)

ZnSe passivation layer for the efficiency enhancement of CuInS{sub 2} quantum dots sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Peng, Zhuoyin; Liu, Yueli; Zhao, Yinghan; Chen, Keqiang; Cheng, Yuqing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Kovalev, Valery [Department of Mechanics and Mathematics, Moscow State University named after M.V. Lomonosov, Leninskie Gory 1, 119992 Moscow (Russian Federation); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

2014-02-25

Highlights: • ZnSe is employed as passivation layer in CuInS{sub 2} quantum dots sensitized solar cells. • Slight red-shift has been occurred in UV–vis absorption spectra with ZnSe coating. • CuInS{sub 2} based solar cells coated by ZnSe have better efficiency than that of ZnS. • Higher rate of charge transport can be produced after coating with ZnSe. -- Abstract: The effect of ZnSe passivation layer is investigated in the CuInS{sub 2} quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS{sub 2} quantum dot sensitized TiO{sub 2} photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS{sub 2} quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS{sub 2} based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer.

Interfacial engineering of two-dimensional nano-structured materials by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Zhuiykov, Serge, E-mail: serge.zhuiykov@ugent.be [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of); Kawaguchi, Toshikazu [Global Station for Food, Land and Water Resources, Global Institution for Collaborative Research and Education, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Graduate School of Environmental Science, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Hai, Zhenyin; Karbalaei Akbari, Mohammad; Heynderickx, Philippe M. [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)

2017-01-15

Highlights: • Advantages of atomic layer deposition technology (ALD) for two-dimensional nano-crystals. • Conformation of ALD technique and chemistry of precursors. • ALD of semiconductor oxide thin films. • Ultra-thin (∼1.47 nm thick) ALD-developed tungsten oxide nano-crystals on large area. - Abstract: Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise nanometer-thin two-dimensional (2D) nanostructures. It is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. ALD is especially advantageous when the film quality or thickness is critical, offering ultra-high aspect ratios. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even over a very large and complex areas. Digital control extends to sandwiches, hetero-structures, nano-laminates, metal oxides, graded index layers and doping, and it is perfect for conformal coating and challenging 2D electrodes for various functional devices. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO{sub 3}) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.

Transferring metallic nano-island on hydrogen passivated silicon surface for nano-electronics

International Nuclear Information System (INIS)

Deng, J; Troadec, C; Joachim, C

2009-01-01

In a planar configuration, precise positioning of ultra-flat metallic nano-islands on semiconductor surface opens a way to construct nanostructures for atomic scale interconnects. Regular triangular Au nano-islands have been grown on atomically flat MoS 2 substrates and manipulated by STM to form nanometer gap metal-pads connector for single molecule electronics study. The direct assembly of regular shaped metal nano-islands on H-Si(100) is not achievable. Here we present how to transfer Au triangle nano-islands from MoS 2 onto H-Si(100) in a clean manner. In this experiment, clean MoS 2 substrates are patterned as array of MoS 2 pillars with height of 8 μm. The Au triangle nano-islands are grown on top of the pillars. Successful printing transfer of these Au nano-islands from the MoS 2 pillars to the H-Si(100) is demonstrated.

Comparative study on the passivation layers of copper sulphide minerals during bioleaching

Science.gov (United States)

Fu, Kai-bin; Lin, Hai; Mo, Xiao-lan; Wang, Han; Wen, Hong-wei; Wen, Zi-long

2012-10-01

The bioleaching of copper sulphide minerals was investigated by using A. ferrooxidans ATF6. The result shows the preferential order of the minerals bioleaching as djurleite>bornite>pyritic chalcopyrite>covellite>porphyry chalcopyrite. The residues were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is indicated that jarosite may not be responsible for hindered dissolution. The elemental sulfur layer on the surface of pyritic chalcopyrite residues is cracked. The compact surface layer of porphyry chalcopyrite may strongly hinder copper extraction. X-ray photoelectron spectroscopy (XPS) further confirms that the passivation layers of covellite, pyritic chalcopyrite, and porphyry chalcopyrite are copper-depleted sulphide Cu4S11, S8, and copper-rich iron-deficient polysulphide Cu4Fe2S9, respectively. The ability of these passivation layers was found as Cu4Fe2S9>Cu4S11>S8>jarosite.

In-situ IR reflexion spectroscopy characterization of the passivation layer developed on the surface of lithium electrodes in organic medium; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

Energy Technology Data Exchange (ETDEWEB)

Barusseau, S. [Alcatel Alsthom Recherche, 91 - Marcoussis (France); Perton, F. [SAFT, Advanced and Industrial Battery Group, 86 - Poitiers (France); Rakotondrainibe, A.; Lamy, C. [Poitiers Univ., 86 (France). Laboratoire de Chimie 1, ``Electrochimie et Interactions``

1996-12-31

the development of lithium metal batteries is hindered by the bad reversibility of the Li{sup +}/Li pair, due to dendrites formation which limits the amount of active matter and can generate short-circuits. The chemical and electrochemical phenomena which take place at the electrode/organic electrolyte interface lead to the formation of a complex passivation film which is of prime importance for the functioning of this type of batteries. The in-situ infrared reflection spectroscopy is well adapted to the chemical study of the passivation layer. Two different techniques were used: the substraction normalized interfacial transform infrared spectroscopy (SNIFTIRS) and the electro-chemically modulated infrared reflectance spectroscopy. These methods have shown that the passivation layer that develops on the surface of the lithium electrode in contact with organic solutions (propylene carbonate, ethylene carbonate and dimethoxyethane) is mainly made of lithium alkyl carbonates (ROCO{sub 2}Li) and lithium carbonates (Li{sub 2}CO{sub 3}). (J.S.) 14 refs.

In-situ IR reflexion spectroscopy characterization of the passivation layer developed on the surface of lithium electrodes in organic medium; Passivation de surface: une nouvelle voie pour reduire l`autodecharge dans les batteries rechargeables a ions lithium LiMn{sub 2}O{sub 4}/Li

Energy Technology Data Exchange (ETDEWEB)

Barusseau, S [Alcatel Alsthom Recherche, 91 - Marcoussis (France); Perton, F [SAFT, Advanced and Industrial Battery Group, 86 - Poitiers (France); Rakotondrainibe, A; Lamy, C [Poitiers Univ., 86 (France). Laboratoire de Chimie 1, ` ` Electrochimie et Interactions` `

1997-12-31

the development of lithium metal batteries is hindered by the bad reversibility of the Li{sup +}/Li pair, due to dendrites formation which limits the amount of active matter and can generate short-circuits. The chemical and electrochemical phenomena which take place at the electrode/organic electrolyte interface lead to the formation of a complex passivation film which is of prime importance for the functioning of this type of batteries. The in-situ infrared reflection spectroscopy is well adapted to the chemical study of the passivation layer. Two different techniques were used: the substraction normalized interfacial transform infrared spectroscopy (SNIFTIRS) and the electro-chemically modulated infrared reflectance spectroscopy. These methods have shown that the passivation layer that develops on the surface of the lithium electrode in contact with organic solutions (propylene carbonate, ethylene carbonate and dimethoxyethane) is mainly made of lithium alkyl carbonates (ROCO{sub 2}Li) and lithium carbonates (Li{sub 2}CO{sub 3}). (J.S.) 14 refs.

The VIMOS Public Extragalactic Redshift Survey (VIPERS). Star formation history of passive red galaxies

Science.gov (United States)

Siudek, M.; Małek, K.; Scodeggio, M.; Garilli, B.; Pollo, A.; Haines, C. P.; Fritz, A.; Bolzonella, M.; de la Torre, S.; Granett, B. R.; Guzzo, L.; Abbas, U.; Adami, C.; Bottini, D.; Cappi, A.; Cucciati, O.; De Lucia, G.; Davidzon, I.; Franzetti, P.; Iovino, A.; Krywult, J.; Le Brun, V.; Le Fèvre, O.; Maccagni, D.; Marchetti, A.; Marulli, F.; Polletta, M.; Tasca, L. A. M.; Tojeiro, R.; Vergani, D.; Zanichelli, A.; Arnouts, S.; Bel, J.; Branchini, E.; Ilbert, O.; Gargiulo, A.; Moscardini, L.; Takeuchi, T. T.; Zamorani, G.

2017-01-01

Aims: We trace the evolution and the star formation history of passive red galaxies, using a subset of the VIMOS Public Extragalactic Redshift Survey (VIPERS). The detailed spectral analysis of stellar populations of intermediate-redshift passive red galaxies allows the build up of their stellar content to be followed over the last 8 billion years. Methods: We extracted a sample of passive red galaxies in the redshift range 0.4 quality. The spectra of passive red galaxies were stacked in narrow bins of stellar mass and redshift. We use the stacked spectra to measure the 4000 Å break (D4000) and the Hδ Lick index (HδA) with high precision. These spectral features are used as indicators of the star formation history of passive red galaxies. We compare the results with a grid of synthetic spectra to constrain the star formation epochs of these galaxies. We characterize the formation redshift-stellar mass relation for intermediate-redshift passive red galaxies. Results: We find that at z 1 stellar populations in low-mass passive red galaxies are younger than in high-mass passive red galaxies, similar to what is observed at the present epoch. Over the full analyzed redshift range 0.4 web site is http://www.vipers.inaf.it/

Passivation Layers for Indoor Solar Cells at Low Irradiation Intensities

OpenAIRE

Rühle, K.; Rauer, M.; Rüdiger, M.; Giesecke, J.; Niewelt, T.; Schmiga, C.; Glunz, S.W.; Kasemann, M.

2012-01-01

The passivation mechanisms and qualities of Al2O3, SiNx, SiO2 and a-Si:H(i) on p- and n-type silicon are investigated by quasi-steady-state photoluminescence measurements. This technique allows effective lifetime measurements in an extremely large injection range between 1010 cm-3 and 1017 cm-3. The measurements are discussed focusing on injections below 1012 cm-3 in order to determine the most effective passivation layer for solar cells arranged for indoor applications. Fixed negative charge...

Formation of surface nano-structures by plasma expansion induced by highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt); Centre for Theoretical Physics, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt) and International Centre for Advanced Studies in Physical Sciences, Faculty of Physics and Astronomy, Ruhr University Bochum, D-44780 Bochum (Germany); El-Said, A. S. [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Nuclear and Radiation Physics Laboratory, Physics Department, Faculty of Science, Mansoura University, 35516 Mansoura (Egypt) and Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstr. 128, 01328 Dresden (Germany)

2012-12-15

Slow highly charged ions (HCIs) create surface nano-structures (nano-hillocks) on the quartz surface. The formation of hillocks was only possible by surpassing a potential energy threshold. By using the plasma expansion approach with suitable hydrodynamic equations, the creation mechanism of the nano-hillocks induced by HCIs is explained. Numerical analysis reveal that within the nanoscale created plasma region, the increase of the temperature causes an increase of the self-similar solution validity domain, and consequently the surface nano-hillocks become taller. Furthermore, the presence of the negative (positive) nano-dust particles would lead to increase (decrease) the nano-hillocks height.

Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

International Nuclear Information System (INIS)

Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

2013-01-01

Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO 2 . Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO 2 as an electron acceptor exhibits photoconversion efficiency ∼46% more than BHJ employed unpassivated TiO 2 . Dominant interfacial recombination pathways such as electron capture by TiO 2 surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO 2 , allowing electronic transport at TiO 2 /h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO 2 /CdSe interface

Simulation of the Electric Field Distribution Near a Topographically Nanostructured Titanium-Electrolyte Interface: Influence of the Passivation Layer

Directory of Open Access Journals (Sweden)

Andreas Körtge

2013-01-01

Full Text Available A major challenge in biomaterials research is the regulation of protein adsorption at metallic implant surfaces. Recently, a number of studies have shown that protein adsorption can be influenced by metallic nanotopographies, which are discussed to increase electric field strengths near sharp edges and spikes. Since many metallic biomaterials form a native passivation layer with semiconducting properties, we have analyzed the influence of this layer on the near-surface electric field distribution of a nanostructure using finite element simulations. The Poisson-Boltzmann equation was solved for a titanium nanostructure covered by a TiO2 passivation layer in contact with a physiological NaCl solution (bulk concentration 0.137 mol/L. In contrast to a purely metallic nanostructure, the electric field strengths near sharp edges and spikes can be lower than in planar regions if a passivation layer is considered. Our results demonstrate that the passivation layer has a significant influence on the near-surface electric field distribution and must be considered for theoretical treatments of protein adsorption on passivated metals like titanium.

2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells.

Science.gov (United States)

Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Durcan, Chris; Yu, Bin

2013-11-21

A two-dimensional layered insulator, hexagonal boron nitride (h-BN), is demonstrated as a new class of surface passivation materials in dye-sensitized solar cells (DSSCs) to reduce interfacial carrier recombination. We observe ~57% enhancement in the photo-conversion efficiency of the DSSC utilizing h-BN coated semiconductor TiO2 as compared with the device without surface passivation. The h-BN coated TiO2 is characterized by Raman spectroscopy to confirm the presence of highly crystalline, mixed monolayer/few-layer h-BN nanoflakes on the surface of TiO2. The passivation helps to minimize electron-hole recombination at the TiO2/dye/electrolyte interfaces. The DSSC with h-BN passivation exhibits significantly lower dark saturation current in the low forward bias region and higher saturation in the high forward bias region, respectively, suggesting that the interface quality is largely improved without impeding carrier transport at the material interface. The experimental results reveal that the emerging 2D layered insulator could be used for effective surface passivation in solar cell applications attributed to desirable material features such as high crystallinity and self-terminated/dangling-bond-free atomic planes as compared with high-k thin-film dielectrics.

Investigation on corrosion and wear behaviors of nanoparticles reinforced Ni-based composite alloying layer

International Nuclear Information System (INIS)

Xu Jiang; Tao Jie; Jiang Shuyun; Xu Zhong

2008-01-01

In order to investigate the role of amorphous SiO 2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO 2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO 2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO 2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of γ-phase and amorphous nano-SiO 2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO 2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was investigated by an electrochemical method in 3.5%NaCl solution. Compared with single alloying layer, the amorphous nano-SiO 2 particles slightly decreased the corrosion resistance of the Ni-Cr-Mo-Cu alloying layer. X-ray photoelectron spectroscopy (XPS) revealed that the passive films formed on the composite alloying consisted of Cr 2 O 3 , MoO 3 , SiO 2 and metallic Ni and Mo. The dry wear test results showed that the composite alloying layer had excellent friction-reduced property, and the wear weight loss of composite alloying layer was less than 60% of that of Ni-Cr-Mo-Cu alloying layer

Electrochemical and anticorrosion behaviors of hybrid functionalized graphite nano-platelets/tripolyphosphate in epoxy-coated carbon steel

International Nuclear Information System (INIS)

Mohammadi, Somayeh; Shariatpanahi, Homeira; Taromi, Faramarz Afshar; Neshati, Jaber

2016-01-01

Highlights: • FGNP was combined with TPP to obtain a hybrid nano-particle. • TEM image showed uniform distribution of the hybrid nanoparticles in epoxy coating. • FGNP is a substrate for linking of TPP anions by hydrogen bonding. • FGNP as an accelerator, provides rapid iron phosphate passive film formation. • The hybrid nano-particle can provide long-term corrosion protection. - Abstract: Functionalized graphite nano-platelets (FGNP) were combined with tripolyphosphate (TPP) to gain a hybrid nano-particle (FGNP-TPP) with homogenous dispersion in epoxy, resulting in an excellent anti-corrosion coating for carbon steel substrate. Characterization analyses of the hybrid nano-particle were performed by FT-IR, SEM, XRD and TEM. TPP was linked to FGNP nano-particles by hydrogen bondings. Different epoxy coatings formulated with 1 wt.% of FGNP, FGNP-TPP and TPP were evaluated. Electrochemical investigations, salt spray and pull-off tests showed that the hybrid nano-particle can provide long-term corrosion protection compared to FGNP and TPP due to synergistic effect between FGNP as an accelerator and TPP as a corrosion inhibitor to produce a uniform and stable iron-phosphate passive film with high surface coverage.

Electrochemical and anticorrosion behaviors of hybrid functionalized graphite nano-platelets/tripolyphosphate in epoxy-coated carbon steel

Energy Technology Data Exchange (ETDEWEB)

Mohammadi, Somayeh, E-mail: somaye.mohammadi32@aut.ac.ir [Department of Chemistry, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Shariatpanahi, Homeira [Corrosion Department, Research Institute of Petroleum Industry (RIPI), P.O. Box 18745-4163, Tehran (Iran, Islamic Republic of); Taromi, Faramarz Afshar [Department of Polymer Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Neshati, Jaber [Corrosion Department, Research Institute of Petroleum Industry (RIPI), P.O. Box 18745-4163, Tehran (Iran, Islamic Republic of)

2016-08-15

Highlights: • FGNP was combined with TPP to obtain a hybrid nano-particle. • TEM image showed uniform distribution of the hybrid nanoparticles in epoxy coating. • FGNP is a substrate for linking of TPP anions by hydrogen bonding. • FGNP as an accelerator, provides rapid iron phosphate passive film formation. • The hybrid nano-particle can provide long-term corrosion protection. - Abstract: Functionalized graphite nano-platelets (FGNP) were combined with tripolyphosphate (TPP) to gain a hybrid nano-particle (FGNP-TPP) with homogenous dispersion in epoxy, resulting in an excellent anti-corrosion coating for carbon steel substrate. Characterization analyses of the hybrid nano-particle were performed by FT-IR, SEM, XRD and TEM. TPP was linked to FGNP nano-particles by hydrogen bondings. Different epoxy coatings formulated with 1 wt.% of FGNP, FGNP-TPP and TPP were evaluated. Electrochemical investigations, salt spray and pull-off tests showed that the hybrid nano-particle can provide long-term corrosion protection compared to FGNP and TPP due to synergistic effect between FGNP as an accelerator and TPP as a corrosion inhibitor to produce a uniform and stable iron-phosphate passive film with high surface coverage.

Investigation on the effect of employing nano-fibrous structure as a scattering layer in dye sensitized solar cells

International Nuclear Information System (INIS)

Rahimi, S.; Mohammadpour, R.; Iraji zad, A.

2012-01-01

TiO 2 nano fibers with different diameters have been fabricated through electro-spinning method and employed as a scattering layer in dye sensitized solar cell. The amount of scattering from nano-fibrous layers depends on their diameters; Because of various ability of light collection in fibers with different diameters, it can directly influence the solar cell performance. In this study, we have studied the optical and electrical properties of TiO 2 nano fibers and solar cells based on these structures have been fabricated and characterized. Finally, by optimizing the structure of scattering layer, maximum efficiency of 6.8 p ercent h as been achieved using fibers in range of 200-350 nm diameter.

PRE-RIFT COMPRESSIONAL STRUCTURES AS A CONTROL ON PASSIVE MARGIN FORMATION

DEFF Research Database (Denmark)

Schiffer, Christian; Petersen, Kenni Dinesen

Passive margins are commonly separated into volcanic and non-volcanic modes, each with a distinct formation mechanism and structure. Both form the transition from continental to oceanic crust. Large amounts of geophysical data at passive margins show that the tapering continental crust is often u...

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Study on the use of TiO2 passivation layer to reduce recombination losses in dye sensitized solar cells

International Nuclear Information System (INIS)

Eskander bin Samsudin, Adel; Mohamed, Norani Muti; Nayan, Nafarizal; Ali, Riyaz Ahmad Mohamed; Shariffuddin, Sharifah Amira Amir; Omar, Salwa

2012-01-01

A lot of research on various aspects of dye solar cells (DSC) has been carried out in order to improve efficiency. This paper analyzes the utilization of TiO 2 passivation layers of different thicknesses by improving the electron transport properties. Four different thicknesses of passivation layers namely 10, 20, 50 and 100 nm were deposited onto the working electrode using r.f sputtering. The electrodes were assembled into TiO 2 based DSC with active area of 1 cm 2 . The solar performance was investigated using 100 mW/cm 2 of AM 1.5 simulated sunlight from solar simulator. The kinetics of the solar cells was investigated using Electrochemical Impedance Spectroscopy (EIS) measurement and the spectral response was measured using Incident Photon to Electron Conversion (IPCE) measurement system. The highest efficiency was found for DSC with 20 nm passivation layer. DSCs with the passivation layer have open circuit voltage, V OC increased by 57 mV, their current density, J SC increased by 0.774 mA cm −2 compared to the one without the passivation layer. The quantum efficiency of the 20 nm passivation layer is the highest, peaking at the wavelength of 534 nm, resulting in the highest performance. All DSCs with the passivation layer recorded higher ratio of R BR /R T where R T is the diffusion resistance of the TiO 2 particles in the mesoscopic layer and R BR is the recombination resistance of the electron to the electrolyte. This implies that the recombination of the electrolyte I − 3 /3I − couple at the substrate/electrolyte interface has been effectively reduced resulting in an enhanced efficiency.

Interband magneto-optical transitions in a layer of semiconductor nano-rings

NARCIS (Netherlands)

Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

2005-01-01

We have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Science.gov (United States)

Cieslak, W. R.; Delnick, F. M.; Peebles, D. E.; Rogers, J. W., Jr.

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/SOCl solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

Directory of Open Access Journals (Sweden)

Youngseok Lee

2012-01-01

Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

Science.gov (United States)

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

2018-04-01

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

Passivation effects on quantum dots prepared by successive ionic layer adsorption and reaction

Science.gov (United States)

Dai, Qilin; Maloney, Scott; Chen, Weimin; Poudyal, Uma; Wang, Wenyong

2016-06-01

ZnS is typically used to passivate semiconductor quantum dots (QDs) prepared by the successive ionic layer adsorption and reaction (SILAR) method for solar cell applications, while for colloidal QDs, organic ligands are usually used for this passivation purpose. In this study we utilized oleylamine and oleic acid ligands, besides ZnS, to passivate QDs prepared by the SILAR approach, and investigated their effects on the incident photon-to-current efficiency (IPCE) performance of the solar cells. It was observed that oleylamine passivation decreased device performance, while oleic acid passivation improved the IPCE of the cells. Redshift of the IPCE onset wavelength was also observed after oleic acid coating, which was attributed to the delocalization of excitons in the CdS QDs.

Study of the effect of passivation layers on capacitance of AlGaN/GaN heterostructures

Directory of Open Access Journals (Sweden)

Kira L. Enisherlova

2016-12-01

Full Text Available MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the specimen surface. The shape of the typical C–V curves for the heterostructures with upper undoped i-AlGaN and i-GaN layers 1,5–2,5 nm in thickness have been analyzed. The appearance of a typical peak on the C–V curves upon a change from the depletion region to the accumulation region has been registered in some structures with an i-GaN layer thickness of 5 nm and more at low frequencies (f<50–200 kHz. The height of this peak increased with a reduction of frequency. It has been found experimentally that the frequency at which the peak is registered can depend on the dislocation density in heterostructures. Possible explanation of the peak formation and band diagram transformation in these structures under an applied electric field have been presented. We show that the application of a Si3N4 passivation layer results in the formation of additional positive charge.

On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

Science.gov (United States)

Lemell, C.; El-Said, A. S.; Meissl, W.; Gebeshuber, I. C.; Trautmann, C.; Toulemonde, M.; Burgdörfer, J.; Aumayr, F.

2007-10-01

We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (˜GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures.

Laser-fired contact formation on metallized and passivated silicon wafers under short pulse durations

Science.gov (United States)

Raghavan, Ashwin S.

The objective of this work is to develop a comprehensive understanding of the physical processes governing laser-fired contact (LFC) formation under microsecond pulse durations. Primary emphasis is placed on understanding how processing parameters influence contact morphology, passivation layer quality, alloying of Al and Si, and contact resistance. In addition, the research seeks to develop a quantitative method to accurately predict the contact geometry, thermal cycles, heat and mass transfer phenomena, and the influence of contact pitch distance on substrate temperatures in order to improve the physical understanding of the underlying processes. Finally, the work seeks to predict how geometry for LFCs produced with microsecond pulses will influence fabrication and performance factors, such as the rear side contacting scheme, rear surface series resistance and effective rear surface recombination rates. The characterization of LFC cross-sections reveals that the use of microsecond pulse durations results in the formation of three-dimensional hemispherical or half-ellipsoidal contact geometries. The LFC is heavily alloyed with Al and Si and is composed of a two-phase Al-Si microstructure that grows from the Si wafer during resolidification. As a result of forming a large three-dimensional contact geometry, the total contact resistance is governed by the interfacial contact area between the LFC and the wafer rather than the planar contact area at the original Al-Si interface within an opening in the passivation layer. By forming three-dimensional LFCs, the total contact resistance is significantly reduced in comparison to that predicted for planar contacts. In addition, despite the high energy densities associated with microsecond pulse durations, the passivation layer is well preserved outside of the immediate contact region. Therefore, the use of microsecond pulse durations can be used to improve device performance by leading to lower total contact resistances

Fluctuations of a passive scalar in a turbulent mixing layer

KAUST Repository

Attili, Antonio

2013-09-19

The turbulent flow originating downstream of the Kelvin-Helmholtz instability in a mixing layer has great relevance in many applications, ranging from atmospheric physics to combustion in technical devices. The mixing of a substance by the turbulent velocity field is usually involved. In this paper, a detailed statistical analysis of fluctuations of a passive scalar in the fully developed region of a turbulent mixing layer from a direct numerical simulation is presented. Passive scalar spectra show inertial ranges characterized by scaling exponents −4/3 and −3/2 in the streamwise and spanwise directions, in agreement with a recent theoretical analysis of passive scalar scaling in shear flows [Celani et al., J. Fluid Mech. 523, 99 (2005)]. Scaling exponents of high-order structure functions in the streamwise direction show saturation of intermittency with an asymptotic exponent ζ∞=0.4 at large orders. Saturation of intermittency is confirmed by the self-similarity of the tails of the probability density functions of the scalar increments at different scales r with the scaling factor r−ζ∞ and by the analysis of the cumulative probability of large fluctuations. Conversely, intermittency saturation is not observed for the spanwise increments and the relative scaling exponents agree with recent results for homogeneous isotropic turbulence with mean scalar gradient. Probability density functions of the scalar increments in the three directions are compared to assess anisotropy.

Fluctuations of a passive scalar in a turbulent mixing layer

KAUST Repository

Attili, Antonio; Bisetti, Fabrizio

2013-01-01

The turbulent flow originating downstream of the Kelvin-Helmholtz instability in a mixing layer has great relevance in many applications, ranging from atmospheric physics to combustion in technical devices. The mixing of a substance by the turbulent velocity field is usually involved. In this paper, a detailed statistical analysis of fluctuations of a passive scalar in the fully developed region of a turbulent mixing layer from a direct numerical simulation is presented. Passive scalar spectra show inertial ranges characterized by scaling exponents −4/3 and −3/2 in the streamwise and spanwise directions, in agreement with a recent theoretical analysis of passive scalar scaling in shear flows [Celani et al., J. Fluid Mech. 523, 99 (2005)]. Scaling exponents of high-order structure functions in the streamwise direction show saturation of intermittency with an asymptotic exponent ζ∞=0.4 at large orders. Saturation of intermittency is confirmed by the self-similarity of the tails of the probability density functions of the scalar increments at different scales r with the scaling factor r−ζ∞ and by the analysis of the cumulative probability of large fluctuations. Conversely, intermittency saturation is not observed for the spanwise increments and the relative scaling exponents agree with recent results for homogeneous isotropic turbulence with mean scalar gradient. Probability density functions of the scalar increments in the three directions are compared to assess anisotropy.

Layered Nano-TiO2 Based Treatments for the Maintenance of Natural Stones in Historical Architecture.

Science.gov (United States)

Gherardi, Francesca; Goidanich, Sara; Dal Santo, Vladimiro; Toniolo, Lucia

2018-06-18

Layered treatments of natural stones based on dispersions of experimental nano-TiO 2 and commercial TEOS showing photocatalytic and self-cleaning properties were set up and tested. To enhance nano-TiO 2 efficacy, a surface pre-treatment with tetraethyl orthosilicate was proposed to avoid the penetration of NPs into the crystalline porous substrates and to improve their adhesion to the stone. Two treatment applications (wet-on-wet and wet-on-dry) were compared, showing different results. A strong interaction Si-O-Ti was the key factor for the successful treatment, leaving the band gap and relevant properties of nano-TiO 2 unaltered. The layered treatments were tested on a porous calcarenite (Noto stone) and a very compact marble (Carrara marble). The combined SiO 2 -nano-TiO 2 treatments can find application in suitable cases where a surface consolidation is needed, ensuring a depolluting and self-cleaning durable activity. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrathin MoS2 and WS2 layers on silver nano-tips as electron emitters

Science.gov (United States)

Loh, Tamie A. J.; Tanemura, Masaki; Chua, Daniel H. C.

2016-09-01

2-dimensional (2D) inorganic analogues of graphene such as MoS2 and WS2 present interesting opportunities for field emission technology due to their high aspect ratio and good electrical conductivity. However, research on 2D MoS2 and WS2 as potential field emitters remains largely undeveloped compared to graphene. Herein, we present an approach to directly fabricate ultrathin MoS2 and WS2 onto Ag nano-tips using pulsed laser deposition at low temperatures of 450-500 °C. In addition to providing a layer of chemical and mechanical protection for the Ag nano-tips, the growth of ultrathin MoS2 and WS2 layers on Ag led to enhanced emission properties over that of pristine nano-tips due to a reduction of the effective barrier height arising from charge injection from Ag to the overlying MoS2 or WS2. For WS2 on Ag nano-tips, the phasic mixture was also an important factor influencing the field emission performance. The presence of 1T-WS2 at the metal-WS2 interface in a hybrid film of 2H/1T-WS2 leads to improvement in the field emission capabilities as compared to pure 2H-WS2 on Ag nano-tips.

Simulation on the Performance of Dye Solar Cell Incorporated with TiO2 Passivation Layer

Directory of Open Access Journals (Sweden)

Unan Yusmaniar Oktiawati

2016-01-01

Full Text Available Dye Solar Cell (DSC has started to gain interest in the recent years for practical application because of its ecofriendly, low cost, and easy fabrication. However, its efficiency is still not as competitive as the conventional silicon based solar cell. One of the research efforts to improve the efficiency of DSC is to use the passivation layer in between the photoelectrode material and the conductive oxide substrate. Thus, the objective of this simulation study is to investigate the effect of passivation layer on the performance of DSC. Properties from literatures which are based on physical work were captured as the input for the simulation using process, ATHENA, and device, ATLAS, simulator. Results have shown that the addition of two-20 nm TiO2 passivation layers on DSC can enhance the efficiency by 11% as the result of less recombination, higher electron mobility, and longer electron lifetime.

Influence of heat treatment on microstructure and passivity of Cu ...

Indian Academy of Sciences (India)

200 ◦C for 20 h in salt bath and air cooled), B (heating up to 800 ◦C for 20 h and water ... chloride ions on passivity was associated with the formation of copper oxides/hydroxide and ... passive layer inhibits copper redeposition and/or preferen-.

Activity and lifetime of urease immobilized using layer-by-layer nano self-assembly on silicon microchannels.

Science.gov (United States)

Forrest, Scott R; Elmore, Bill B; Palmer, James D

2005-01-01

Urease has been immobilized and layered onto the walls of manufactured silicon microchannels. Enzyme immobilization was performed using layer-by-layer nano self-assembly. Alternating layers of oppositely charged polyelectrolytes, with enzyme layers "encased" between them, were deposited onto the walls of the silicon microchannels. The polycations used were polyethylenimine (PEI), polydiallyldimethylammonium (PDDA), and polyallylamine (PAH). The polyanions used were polystyrenesulfonate (PSS) and polyvinylsulfate (PVS). The activity of the immobilized enzyme was tested by pumping a 1 g/L urea solution through the microchannels at various flow rates. Effluent concentration was measured using an ultraviolet/visible spectrometer by monitoring the absorbance of a pH sensitive dye. The architecture of PEI/PSS/PEI/urease/PEI with single and multiple layers of enzyme demonstrated superior performance over the PDDA and PAH architectures. The precursor layer of PEI/PSS demonstrably improved the performance of the reactor. Conversion rates of 70% were achieved at a residence time of 26 s, on d 1 of operation, and >50% at 51 s, on d 15 with a six-layer PEI/urease architecture.

Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

National Research Council Canada - National Science Library

Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

2005-01-01

.... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Energy Technology Data Exchange (ETDEWEB)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

International Nuclear Information System (INIS)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

The authors have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides

Tungsten nano-tendril growth in the Alcator C-Mod divertor

International Nuclear Information System (INIS)

Wright, G.M.; Brunner, D.; Labombard, B.; Lipschultz, B.; Terry, J.L.; Whyte, D.G.; Baldwin, M.J.; Doerner, R.P.

2012-01-01

Growth of tungsten nano-tendrils (‘fuzz’) has been observed for the first time in the divertor region of a high-power density tokamak experiment. After 14 consecutive helium L-mode discharges in Alcator C-Mod, the tip of a tungsten Langmuir probe at the outer strike point was fully covered with a layer of nano-tendrils. The thickness of the individual nano-tendrils (50–100 nm) and the depth of the layer (600 ± 150 nm) are consistent with observations from experiments on linear plasma devices. The observation of tungsten fuzz in a tokamak may have important implications for material erosion, dust formation, divertor lifetime and tokamak operations in next-step devices. (letter)

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Fujii, Mami N.; Uraoka, Yukiharu

2015-07-01

We report the fabrication of a photosensitive hybrid passivation material on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) that greatly enhance its stability and improve its electrical characteristics. The hybrid passivation based on polysilsesquioxane is transparent and fabricated using a simple solution process. Because the passivation is photosensitive, dry etching was never performed during TFT fabrication. TFTs passivated with this material had a small threshold voltage shift of 0.5 V during positive bias stress, 0.5 V during negative bias stress, and -2.5 V during negative bias illumination stress. Furthermore, TFTs passivated by this layer were stable after being subjected to high relative humidity stress — confirming the superb barrier ability of the passivation. Analysis of secondary ion mass spectrometry showed that a large amount of hydrogen, carbon, and fluorine can be found in the channel region. We show that both hydrogen and fluorine reduced oxygen vacancies and that fluorine stabilized weak oxygen and hydroxide bonds. These results demonstrate the large potential of photosensitive hybrid passivation layers as effective passivation materials.

Polymer/Layered Silicate Nano composites

International Nuclear Information System (INIS)

Bakhit, M.E.E.H.

2012-01-01

Polymer–clay nano composites have attracted the attention of many researchers and experimental results are presented in a large number of recent papers and patents because of the outstanding mechanical properties and low gas permeabilities that are achieved in many cases. Polymer-clay nano composites are a new class of mineral-field polymer that contain relatively small amounts (<10%) of nanometer-sized clay particles. Polymer/clay nano composites have their origin in the pioneering research conducted at Toyota Central Research Laboratories and the first historical record goes back to 1987. The matrix was nylon-6 and the filler MMT. Because of its many advantages such as high mechanical properties, good gas barrier, flame retardation, etc. polymer/clay nano composites have been intensely investigated and is currently the subject of many research programs. Nano composite materials are commercially important and several types of products with different shapes and applications including food packaging films and containers, engine parts, dental materials, etc. are now available in markets. A number of synthesis routes have been developed in the recent years to prepare these materials, which include intercalation of polymers or prepolymers from solution, in-situ polymerization, melt intercalation etc. In this study, new nano composite materials were produced from the components of rubber (Nbr, SBR and EPDM) as the polymeric matrix and organically modified quaternary alkylammonium montmorillonite in different contents (3, 5, 7, and 10 phr) as the filler by using an extruder then, the rubber nano composite sheets were irradiated at a dose of 0, 50, 75, 100 and 150 KGy using Electron beam Irradiation technique as a crosslinking agent. These new materials can be characterized by using various analytical techniques including X-ray diffractometer XRD, Thermogravimetric analyzer TGA, scanning electron microscope (SEM), transmission electron microscope (TEM),Fourier transform

Electrochemical synthesis, structure and phase composition of nano structured amorphous thin layers of NiW and Ni-Mo

International Nuclear Information System (INIS)

Vitina, I.; Lubane, M.; Belmane, V.; Rubene, V.; Krumina, A.

2006-01-01

Full text: Nano structured Ni-W thin layers containing W 6-37 wt.% were electrodeposited on a copper substratum. The W content in the layer changes, and it is determined by the electrolyte pH in the range 8.0-9.6 and the cathode current density in the range 1.0-10.0 A/dm 2 . The atomic composition and thermal stability of structure of the electrodeposited thin layers depend for the most part on the conditions of the electrodeposition and less on the W content in the layer. Cracking of the Ni-W layers electrodeposited at the electrolyte pH 8.5 and containing 34-37 wt.% W and 8.5 wt.% W was observed. The cracking increases at heating at 400 deg C for 50 h. On the contrary, no cracking of the Ni-W layer electrodeposited at the electrolyte pH 9.0 and containing 25 wt.% W was observed. The atomic composition of the layer remains practically unchanged at heating at 400 deg C for 50 h. The layer binds oxygen up to 7 wt.%. According to X-ray diffraction, in spite of the W content 35-37 wt.% in the layer, nano structured layers rather than amorphous layers were obtained which at heating at 400 deg C depending on the W content crystallises as Ni or intermetallic compounds Ni x W y if the W content is approx. 25 wt.%. Amorphous Ni-Mo alloys containing 35-52 wt.% Mo was electrodeposited on copper substratum at the cathode current densities of 0.5-1.5 A/dm2 and the electrolyte pH 6.8-8.6. Formation of thin layer (∼1-2μm) of X-ray amorphous Ni-Mo alloy, the Mo content, the characteristics of structure depend on the electrodeposition process, the electrolyte pH, and the cathode current density. The Ni-Mo layer deposited at the electrolyte pH above 8.6 and below average 6.8 had a nanocrystalline structure rather than characteristics of amorphous structure. Ni- W and Ni-Mo alloys were electrodeposited from citrate electrolyte not containing ammonium ions

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

Science.gov (United States)

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

In situ-synthesized cadmium sulfide nanowire photosensor with a parylene passivation layer for chemiluminescent immunoassays.

Science.gov (United States)

Im, Ju-Hee; Kim, Hong-Rae; An, Byoung-Gi; Chang, Young Wook; Kang, Min-Jung; Lee, Tae-Geol; Son, Jin Gyeng; Park, Jae-Gwan; Pyun, Jae-Chul

2017-06-15

The direct in situ synthesis of cadmium sulfide (CdS) nanowires (NWs) was presented by direct synthesis of CdS NWs on the gold surface of an interdigitated electrode (IDE). In this work, we investigated the effect of a strong oxidant on the surfaces of the CdS NWs using X-ray photoelectron spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry. We also fabricated a parylene-C film as a surface passivation layer for in situ-synthesized CdS NW photosensors and investigated the influence of the parylene-C passivation layer on the photoresponse during the coating of parylene-C under vacuum using a quartz crystal microbalance and a photoanalyzer. Finally, we used the in situ-synthesized CdS NW photosensor with the parylene-C passivation layer to detect the chemiluminescence of horseradish peroxidase and luminol and applied it to medical detection of carcinoembryonic antigen. Copyright © 2017 Elsevier B.V. All rights reserved.

The structure and elemental composition of the SiO2 layers with zinc-based nano clusters created by high-dose implantation and annealing

International Nuclear Information System (INIS)

Mokhovikov, M.A.; Komarov, F.F.; Vlasukova, L.A.; Mil'chanin, O.V.; Wendler, E.; Wesch, W.; Zhukovski, P.; Vengerek, P.

2015-01-01

We present the results of the structure and elemental composition of the SiO 2 layers after high-dose zinc implantation (10 16 - 10 17 sm -2 ) at room temperature and at 500°C, as well as after 700°C annealing. In the case of 'hot' implantation the formation of nano sized (to 5 nm) clusters containing atoms of zinc is registered in as-implanted samples. TEM-analysis proves crystalline structure of these precipitates. Subsequent annealing results in a redistribution of zinc within the implanted layer and in the formation of large crystallites (10 -12 nm for a dose of 5*10 16 cm -2 and 12-18 nm for a dose of 10 17 cm -2 ) in the area of high impurity concentration. (authors)

Gold nano-particles fixed on glass

International Nuclear Information System (INIS)

Worsch, Christian; Wisniewski, Wolfgang; Kracker, Michael; Rüssel, Christian

2012-01-01

Highlights: ► We produced wear resistant gold–ruby coatings on amorphous substrates. ► Thin sputtered gold layers were covered by or embedded in silica coatings. ► Annealing above T g of the substrate glass led to the formation of gold nano particles. ► A 1 1 1-texture of the gold particles is observed via XRD and EBSD. ► EBSD-patterns can be acquired from crystals covered by a thin layer of glass. - Abstract: A simple process for producing wear resistant gold nano-particle coatings on transparent substrates is proposed. Soda-lime-silica glasses were sputtered with gold and subsequently coated with SiO 2 using a combustion chemical vapor deposition technique. Some samples were first coated with silica, sputtered with gold and then coated with a second layer of silica. The samples were annealed for 20 min at either 550 or 600 °C. This resulted in the formation of round, well separated gold nano-particles with sizes from 15 to 200 nm. The color of the coated glass was equivalent to that of gold–ruby glasses. Silica/gold/silica coatings annealed at 600 °C for 20 min were strongly adherent and scratch resistant. X-ray diffraction and electron backscatter diffraction (EBSD) were used to describe the crystal orientations of the embedded particles. The gold particles are preferably oriented with their (1 1 1) planes perpendicular to the surface.

RF Performance of Layer-Structured Broadband Passive Millimeter-Wave Imaging System

Directory of Open Access Journals (Sweden)

Kunio Sakakibara

2016-01-01

Full Text Available Low profile and simple configuration are advantageous for RF module in passive millimeter-wave imaging system. High sensitivity over broad operation bandwidth is also necessary to detect right information from weak signal. We propose a broadband layer-structured module with low profile, simple structure, and ease of manufacture. This module is composed of a lens antenna and a detector module that consists of a detector circuit and a broadband microstrip-to-waveguide transition. The module forms a layer structure as a printed substrate with detector circuit is fixed between two metal plates with horn antennas and back-short waveguides. We developed a broadband passive millimeter-wave imaging module composed of a lens antenna and a detector module in this work. The gain and the antenna efficiency were measured, and the broadband operation was observed for the lens antenna. For the detector module, peak sensitivity was 8100 V/W. Furthermore, the detector module recognized a difference in the absorber’s temperature. The designs of the lens antenna and the detector module are presented and the RF performances of these components are reported. Finally, passive millimeter-wave imaging of a car, a human, and a metal plate in clothes is demonstrated in this paper.

Electrodeposition of ZnO nano-wires lattices with a controlled morphology

International Nuclear Information System (INIS)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C.

2006-01-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO 2 . Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

Science.gov (United States)

Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

2015-10-07

Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

Study on the use of TiO{sub 2} passivation layer to reduce recombination losses in dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Eskander bin Samsudin, Adel; Mohamed, Norani Muti; Nayan, Nafarizal; Ali, Riyaz Ahmad Mohamed; Shariffuddin, Sharifah Amira Amir; Omar, Salwa [Electrical and Electronics Department, 31750, Tronoh, Universiti Teknologi PETRONAS (Malaysia); Fundamental and Applied Sciences Department, 31750, Tronoh, Universiti Teknologi PETRONAS (Malaysia); Electronic Engineering Department, Electrical and Electronic Engineering Faculty, Universiti Tun Hussein Onn Malaysia (UTHM) (Malaysia)

2012-09-26

A lot of research on various aspects of dye solar cells (DSC) has been carried out in order to improve efficiency. This paper analyzes the utilization of TiO{sub 2} passivation layers of different thicknesses by improving the electron transport properties. Four different thicknesses of passivation layers namely 10, 20, 50 and 100 nm were deposited onto the working electrode using r.f sputtering. The electrodes were assembled into TiO{sub 2} based DSC with active area of 1 cm{sup 2}. The solar performance was investigated using 100 mW/cm{sup 2} of AM 1.5 simulated sunlight from solar simulator. The kinetics of the solar cells was investigated using Electrochemical Impedance Spectroscopy (EIS) measurement and the spectral response was measured using Incident Photon to Electron Conversion (IPCE) measurement system. The highest efficiency was found for DSC with 20 nm passivation layer. DSCs with the passivation layer have open circuit voltage, V{sub OC} increased by 57 mV, their current density, J{sub SC} increased by 0.774 mA cm{sup -2} compared to the one without the passivation layer. The quantum efficiency of the 20 nm passivation layer is the highest, peaking at the wavelength of 534 nm, resulting in the highest performance. All DSCs with the passivation layer recorded higher ratio of R{sub BR}/R{sub T} where R{sub T} is the diffusion resistance of the TiO{sub 2} particles in the mesoscopic layer and R{sub BR} is the recombination resistance of the electron to the electrolyte. This implies that the recombination of the electrolyte I{sup -}{sub 3}/3I{sup -} couple at the substrate/electrolyte interface has been effectively reduced resulting in an enhanced efficiency.

Impact of Isolation and Immobilization Layers on the Electro-Mechanical Response of Piezoresistive Nano Cantilever Sensors.

Science.gov (United States)

Mathew, Ribu; Sankar, A Ravi

2018-03-01

In the last decade, piezoresistive nano cantilever sensors have been extensively explored, especially for chemical and biological sensing applications. Piezoresistive cantilever sensors are multi-layer structures with different constituent materials. Performance of such sensors is a function of their geometry and constituent materials. For a fixed material set, the pre-requisite for optimizing the performance of a composite piezoresistive cantilever sensor is careful geometrical design of its constituent layers. Even though, treatise encompasses various designs of such sensors, typically for computational simplicity the functional layers i.e., the isolation and immobilization layers are neglected in the modeling stages. In this paper, we elucidate the impact of the functional layers on the electro-mechanical response of composite piezoresistive nano cantilever sensors. Systematic and detailed computations are performed using theoretical models and numerical simulations. Results show that both the isolation and immobilization layers play a critical role in governing the sensor performance. Simulation results depict that compared to a sensor with an isolation layer of thickness 100 nm, a sensor without isolation layer has 36.29% and 42.51% better deflection sensitivity and electrical sensitivity respectively. Furthermore, it is found that when an immobilization layer of thickness 40 nm is added atop the isolation layer, the deflection sensitivity and electrical sensitivity reduces by 12.98% and 15.83% respectively. Through our investigation it is shown that the isolation and immobilization layers not only play a vital role in determining the stability and electro-mechanical response of the sensor but their negligence in the design stages can be detrimental. Apart from investigating the impact of the immobilization layer thickness, to model the sensor closer to real time operational conditions, we have performed analysis to understand the impact of non-uniformity in

GISAXS modelling of helium-induced nano-bubble formation in tungsten and comparison with TEM

International Nuclear Information System (INIS)

Thompson, Matt; Sakamoto, Ryuichi; Bernard, Elodie; Kirby, Nigel; Kluth, Patrick; Riley, Daniel; Corr, Cormac

2016-01-01

Grazing-incidence small angle x-ray scattering (GISAXS) is a powerful non-destructive technique for the measurement of nano-bubble formation in tungsten under helium plasma exposure. Here, we present a comparative study between transmission electron microscopy (TEM) and GISAXS measurements of nano-bubble formation in tungsten exposed to helium plasma in the Large Helical Device (LHD) fusion experiment. Both techniques are in excellent agreement, suggesting that nano-bubbles range from spheroidal to ellipsoidal, displaying exponential diameter distributions with mean diameters μ=0.68 ± 0.04 nm and μ=0.6 ± 0.1 nm measured by TEM and GISAXS respectively. Depth distributions were also computed, with calculated exponential depth distributions with mean depths of 8.4 ± 0.5 nm and 9.1 ± 0.4 nm for TEM and GISAXS. In GISAXS modelling, spheroidal particles were fitted with an aspect ratio ε=0.7 ± 0.1. The GISAXS model used is described in detail. - Highlights: • GISAXS and TEM were used to measure nano-bubble formation in W exposed to He plasma in the large helical device. • Nano-bubbles had an exponential diameter distributions with averages 0.6 ± 0.1 nm and 0.68 ± 0.04 nm measured by GISAXS and TEM. • Nano-bubbles had an exponential depth distributions with average depths of 9.1 ± 0.4 nm and 8.4 ± 0.5 nm for GISAXS and TEM. • The GISAXS model used to analyse diffraction patterns is explained in detail.

GISAXS modelling of helium-induced nano-bubble formation in tungsten and comparison with TEM

Energy Technology Data Exchange (ETDEWEB)

Thompson, Matt, E-mail: matt.a.thompson@anu.edu.au [Research School of Physics and Engineering, Australian National University, Mills Road, Acton, ACT 2601 (Australia); Sakamoto, Ryuichi [National Institute for Fusion Science, Toki, Gifu 509-5292 (Japan); Bernard, Elodie [Aix-Marseille University, Marseille 13288 (France); Kirby, Nigel [SAXS/WAXS Beamline, Australian Synchrotron, 800 Blackburn Rd, Clayton, VIC, 3168 (Australia); Kluth, Patrick [Research School of Physics and Engineering, Australian National University, Mills Road, Acton, ACT 2601 (Australia); Riley, Daniel [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW, 2232 (Australia); Corr, Cormac [Research School of Physics and Engineering, Australian National University, Mills Road, Acton, ACT 2601 (Australia)

2016-05-15

Grazing-incidence small angle x-ray scattering (GISAXS) is a powerful non-destructive technique for the measurement of nano-bubble formation in tungsten under helium plasma exposure. Here, we present a comparative study between transmission electron microscopy (TEM) and GISAXS measurements of nano-bubble formation in tungsten exposed to helium plasma in the Large Helical Device (LHD) fusion experiment. Both techniques are in excellent agreement, suggesting that nano-bubbles range from spheroidal to ellipsoidal, displaying exponential diameter distributions with mean diameters μ=0.68 ± 0.04 nm and μ=0.6 ± 0.1 nm measured by TEM and GISAXS respectively. Depth distributions were also computed, with calculated exponential depth distributions with mean depths of 8.4 ± 0.5 nm and 9.1 ± 0.4 nm for TEM and GISAXS. In GISAXS modelling, spheroidal particles were fitted with an aspect ratio ε=0.7 ± 0.1. The GISAXS model used is described in detail. - Highlights: • GISAXS and TEM were used to measure nano-bubble formation in W exposed to He plasma in the large helical device. • Nano-bubbles had an exponential diameter distributions with averages 0.6 ± 0.1 nm and 0.68 ± 0.04 nm measured by GISAXS and TEM. • Nano-bubbles had an exponential depth distributions with average depths of 9.1 ± 0.4 nm and 8.4 ± 0.5 nm for GISAXS and TEM. • The GISAXS model used to analyse diffraction patterns is explained in detail.

Characterization and Growth Mechanism of Nickel Nano wires Resulting from Reduction of Nickel Formate in Polyol Medium

International Nuclear Information System (INIS)

Logutenko, O.A.; Titkov, A.I.; Vorobyov, A.M.; Yukhin, Y.M.; Lyakhov, N.Z.

2016-01-01

Nickel linear nano structures were synthesized by reduction of nickel formate with hydrazine hydrate in ethylene glycol medium in the absence of any surfactants or capping agents for direction of the particles growth. The effect of the synthesis conditions such as temperature, reduction time, type of polyol, and nickel formate concentration on the reduction products was studied. The size and morphology of the nickel nano wires were characterized by X-ray diffraction, scanning, and transmission electron microscopy. It was shown that the nickel nano crystallites were wire-shaped with a face-center-cubic phase. Ethylene glycol was found to play a crucial role in the formation of the nickel nano wires. The possible growth processes of the wire-shaped particles taking place at 110 and 130 degree are discussed. It was shown that, under certain synthesis conditions, nickel nano wires grow on the surface of the crystals of the solid intermediate of nickel with hydrazine hydrate.

Role of strained nano-regions in the formation of subgrains in CaCu3Ti4O12

Science.gov (United States)

Fang, Tsang-Tse; Wang, Yong-Huei; Kuo, Jui-Chao

2011-07-01

Single-phase CaCu3Ti4O12 (CCTO) was synthesized by solid-state reaction. Electron backscatter diffraction, scanning electron microscopy, and atomic force microscopy were adopted to characterize the grain orientation, microstructure, and surface morphology of the CCTO samples with or without thermal etching. Bump strained nano-regions induced by the local compositional disorder at a nano-scale have been discovered, being the origin of the formation of subgrains in CCTO. The proposed mechanism for the formation of subgrains involves the formation of etched pits and subboundaries pertaining to the strained nano-regions rather than dislocation displacement. The dielectric response inside the grains of CCTO relevant to the strained nano-regions is also discussed.

In-situ TEM observation of nano-void formation in UO2 under irradiation

Science.gov (United States)

Sabathier, C.; Martin, G.; Michel, A.; Carlot, G.; Maillard, S.; Bachelet, C.; Fortuna, F.; Kaitasov, O.; Oliviero, E.; Garcia, P.

2014-05-01

Transmission electron microscopy (TEM) observations of UO2 polycrystals irradiated in situ with 4 MeV Au ions were performed at room temperature (RT) to better understand the mechanisms of cavity and ultimately fission products nucleation in UO2. Experiments were carried out at the JANNuS Orsay facility that enables in situ ion irradiations inside the microscope to be carried out. The majority of 4 MeV gold ions were transmitted through the thin foil, and the induced radiation defects were investigated by TEM. Observations showed that nano-void formation occurs at ambient temperature in UO2 thin foils irradiated with energetic heavy ions under an essentially nuclear energy loss regime. The diameter and density of nano-objects were measured as a function of the gold irradiation dose at RT. A previous paper has also revealed a similar nano-object population after a Xe implantation performed at 390 keV at 870 K. The nano-object density was modelled using simple concepts derived from Classical Molecular Dynamics simulations. The results are in good agreement, which suggests a mechanism of heterogeneous nucleation induced by energetic cascade overlaps. This indicates that nano-void formation mechanism is controlled by radiation damage. Such nanovoids are likely to act as sinks for mobile fission products during reactor operation.

Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps

International Nuclear Information System (INIS)

Cohen-Taguri, G.; Ruzin, A.; Goldfarb, I.

2012-01-01

We used in situ scanning tunneling microscopy to monitor in real time the formation of nano-rings at the molecular beam epitaxially grown In/CdZnTe(110) surface, and Auger electron spectroscopy to explore the corresponding compositional changes. In-diffusion of In and segregation of Cd to the surface in course of annealing lead to a formation of elliptically distorted nano-rings, elongated along the fast [110] diffusion direction. Exacerbated diffusion anisotropy in the liquid state, at temperatures above the melting point of In, further distorts the nano-rings into a camel-hump shape.

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

2011-01-01

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Synthesis of Poly aniline-Montmorillonite Nano composites Using H2O2 as the Oxidant

International Nuclear Information System (INIS)

Binitha, N.; Binitha, N.; Suraja, V.; Zahira Yaakob; Sugunan, S.

2011-01-01

Poly aniline montmorillonite nano composite was prepared using H 2 O 2 as the oxidant. The catalytic environment of montmorillonite favours polymerization. Intercalation and composite formation was proven from various techniques such as XRD, FTIR, DRS and thermal analysis. XRD patterns give the dimension of the intercalated PANI, from the shift of 2θ values, which is in the nano range. FTIR showed that PANI composite formation occurred without affecting the basic clay layer structure. Thus the successful development of an alternative cheap route for poly aniline-montmorillonite nano composite was well established. (author)

Nano-Channels Early Formation Investigation on Stainless Steel 316Ti after Immersion in Molten Pb-Bi

Directory of Open Access Journals (Sweden)

Abu Khalid Rivai

2017-04-01

Full Text Available Pb-Bi (lead-bismuth eutectic-LBE is a coolant of one of main candidates for the future nuclear reactor in the world (Generation IV reactors i.e. LFR (Lead alloy-cooled Fast Reactor, and also a spallation target material for ADS (Accelerator Driven Transmutation System. However, the development of fuel cladding and structural materials in LBE environment, especially at high temperature, is a critical issue for the deployment of LFR and ADS. This is because of the corrosive characteristic of LBE to metals as constituent materials of fuel cladding and structural of the reactors. In this study, corrosion test of a high-chromium austenitic steel i.e. SS316Ti in liquid Pb-Bi at 550ºC has been carried out for about 300 hours. The characterization using SEM-EDS (Scanning Electron Microscope-Energy Dispersive X-ray Spectroscope showed that an iron oxide as the outer layer and a chromium oxide as the inner layer on the surface of the specimen were formed which protected the steel specimen from corrosion and dissolution attack of Pb-Bi. However, small amount of Pb-Bi could penetrate into the iron oxide layer through ultra-thin channels. Atomic Force Microscopy (AFM was employed to investigate the phenomena of the channels formation. The results of the nano-scale investigation showed clearly the formation of the channels.

Stability of passive films on amorphous Fe-Cr alloys with boron and phosphorus with impedance spectroscopy

International Nuclear Information System (INIS)

Virtanen, S.; Elsener, B.; Boehni, H.

1989-01-01

The mechanism of the passivation and the effect of metalloids on the stability of the passive films of amorphous Fe-Cr-(B,P,C) alloys has been investigated by polarization measurements, impedance spectroscopy and potential decay measurements. The results show that phosphorus facilitates the active/passive-transition by forming a porous iron-phosphate pre-passive layer on the alloy surface in the active range of the dissolution. This layer blocks the active sites of the surface and accelerates the cathodic H 2 -evolution reaction. The formation of the passivating chromium oxide layer takes place in the pores of this layer. In the passive range of the alloys oxidized phosphorus gets incorporated in the outer layer of the passive film. The presence of oxidized phosphorus as PO 4 3- anions in the passive film increases the localized corrosion resistance in Cl-containing solutions. The effect of the incorporated phosphates in the passive film is discussed with respect to the bipolar fixed-charge induced passivity model. The phosphates make the outer layer of the passive film cation-selective and thus hinder the penetration of the chlorides into the film. The oxidized boron species cannot change the ion-selectivity of the film; instead of this they negatively affect the stability of the passive film. (author) 18 refs., 9 figs., 3 tabs

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Effect of Nano-TiC Dispersed Particles and Electro-Codeposition Parameters on Morphology and Structure of Hybrid Ni/TiC Nanocomposite Layers.

Science.gov (United States)

Benea, Lidia; Celis, Jean-Pierre

2016-04-06

This research work describes the effect of dispersed titanium carbide (TiC) nanoparticles into nickel plating bath on Ni/TiC nanostructured composite layers obtained by electro-codeposition. The surface morphology of Ni/TiC nanostructured composite layers was characterized by scanning electron microscopy (SEM). The composition of coatings and the incorporation percentage of TiC nanoparticles into Ni matrix were studied and estimated by using energy dispersive X-ray analysis (EDX). X-ray diffractometer (XRD) has been applied in order to investigate the phase structure as well as the corresponding relative texture coefficients of the composite layers. The results show that the concentration of nano-TiC particles added in the nickel electrolyte affects the inclusion percentage of TiC into Ni/TiC nano strucured layers, as well as the corresponding morphology, relative texture coefficients and thickness indicating an increasing tendency with the increasing concentration of nano-TiC concentration. By increasing the amount of TiC nanoparticles in the electrolyte, their incorporation into nickel matrix also increases. The hybrid Ni/nano-TiC composite layers obtained revealed a higher roughness and higher hardness; therefore, these layers are promising superhydrophobic surfaces for special application and could be more resistant to wear than the pure Ni layers.

Effect of Nano-TiC Dispersed Particles and Electro-Codeposition Parameters on Morphology and Structure of Hybrid Ni/TiC Nanocomposite Layers

Directory of Open Access Journals (Sweden)

Lidia Benea

2016-04-01

Full Text Available This research work describes the effect of dispersed titanium carbide (TiC nanoparticles into nickel plating bath on Ni/TiC nanostructured composite layers obtained by electro-codeposition. The surface morphology of Ni/TiC nanostructured composite layers was characterized by scanning electron microscopy (SEM. The composition of coatings and the incorporation percentage of TiC nanoparticles into Ni matrix were studied and estimated by using energy dispersive X-ray analysis (EDX. X-ray diffractometer (XRD has been applied in order to investigate the phase structure as well as the corresponding relative texture coefficients of the composite layers. The results show that the concentration of nano-TiC particles added in the nickel electrolyte affects the inclusion percentage of TiC into Ni/TiC nano strucured layers, as well as the corresponding morphology, relative texture coefficients and thickness indicating an increasing tendency with the increasing concentration of nano-TiC concentration. By increasing the amount of TiC nanoparticles in the electrolyte, their incorporation into nickel matrix also increases. The hybrid Ni/nano-TiC composite layers obtained revealed a higher roughness and higher hardness; therefore, these layers are promising superhydrophobic surfaces for special application and could be more resistant to wear than the pure Ni layers.

Ellipsometric study of salt film formation during passivation

Energy Technology Data Exchange (ETDEWEB)

Wiechmann, Lee Warren [Univ. of Illinois, Urbana-Champaign, IL (United States)

1979-01-01

An experimental program was carried out to gain further understanding into the kinetics of salt film formation during repassivation of a corroding metal. Experiments were conducted using an ellipsometer to examine an electrode surface undergoing anodic dissolution and passivation. Because of the constraints of the ellipsometer, the sample had to be mounted vertically. As a consequence natural convection currents had to be taken into account. Calculation showed that the mass transfer limiting current was exceeded by transient currents, indicating that natural convection was present to an extent that could drastically change the system from the diffusion model that was proposed. It was determined that recessing the electrode led to minimized natural convective effects, and to uniform current distribution. The ellipsometer output provided times which were associated with precipitation and dissolution of the salt film. The experimental data was in good agreement with the mathematical model, further strengthening the precipitation-dissolution mechanism of passivation. Furthermore, a dimensionless model was shown capable of a first approximation of the passivation behavior of any metal. Investigations reported here were carried out on iron, nickel, and cobalt.

Effect of passive film on electrochemical surface treatment for indium tin oxide

International Nuclear Information System (INIS)

Wu, Yung-Fu; Chen, Chi-Hao

2013-01-01

Highlights: ► Oxalic, tartaric, and citric acid baths accompanying with applied voltages were used to treat the ITO surface. ► We investigated the changes in ITO surfaces by examining the potentiodynamic behavior of ITO films. ► AFM analysis showed the formation of a passive layer could assist to planarize surface. ► XPS analysis indicated this passive layer was mainly composed of SnO 2. ► A better planarization was obtained by treating in 3.0 wt.% tartaric acid at 0.5 V due to weak complexation strength. - Abstract: Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO 2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid.

Physical-layer network coding for passive optical interconnect in datacenter networks.

Science.gov (United States)

Lin, Rui; Cheng, Yuxin; Guan, Xun; Tang, Ming; Liu, Deming; Chan, Chun-Kit; Chen, Jiajia

2017-07-24

We introduce physical-layer network coding (PLNC) technique in a passive optical interconnect (POI) architecture for datacenter networks. The implementation of the PLNC in the POI at 2.5 Gb/s and 10Gb/s have been experimentally validated while the gains in terms of network layer performances have been investigated by simulation. The results reveal that in order to realize negligible packet drop, the wavelengths usage can be reduced by half while a significant improvement in packet delay especially under high traffic load can be achieved by employing PLNC over POI.

Sub-10-nm suspended nano-web formation by direct laser writing

Science.gov (United States)

Wang, Sihao; Yu, Ye; Liu, Hailong; Lim, Kevin T. P.; Madurai Srinivasan, Bharathi; Zhang, Yong Wei; Yang, Joel K. W.

2018-06-01

A diffraction-limited three-dimensional (3D) direct laser writing (DLW) system based on two-photon polymerization can routinely pattern structures at the 100 nm length scale. Several schemes have been developed to improve the patterning resolution of 3D DLW but often require customized resist formulations or multi-wavelength exposures. Here, we introduce a scheme to produce suspended nano-webs with feature sizes below 10 nm in IP-Dip resist using sub-threshold exposure conditions in a commercial DLW system. The narrowest suspended lines (nano-webs) measured 7 nm in width. Larger ∼20 nm nano-webs were patterned with ∼80% yield at increased laser powers. In addition, closely spaced nano-gaps with a center-to-center distance of 33 nm were produced by patterning vertically displaced suspended lines followed by metal deposition and liftoff. We provide hypotheses and present preliminary results for a mechanism involving the initiation of a percolative path and a strain-induced narrowing in the nano-web formation. Our approach allows selective features to be patterned with dimensions comparable to the sub-10 nm patterning capability of electron-beam lithography (EBL).

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

ISA-TAB-Nano: A Specification for Sharing Nanomaterial Research Data in Spreadsheet-based Format

Science.gov (United States)

2013-01-01

Background and motivation The high-throughput genomics communities have been successfully using standardized spreadsheet-based formats to capture and share data within labs and among public repositories. The nanomedicine community has yet to adopt similar standards to share the diverse and multi-dimensional types of data (including metadata) pertaining to the description and characterization of nanomaterials. Owing to the lack of standardization in representing and sharing nanomaterial data, most of the data currently shared via publications and data resources are incomplete, poorly-integrated, and not suitable for meaningful interpretation and re-use of the data. Specifically, in its current state, data cannot be effectively utilized for the development of predictive models that will inform the rational design of nanomaterials. Results We have developed a specification called ISA-TAB-Nano, which comprises four spreadsheet-based file formats for representing and integrating various types of nanomaterial data. Three file formats (Investigation, Study, and Assay files) have been adapted from the established ISA-TAB specification; while the Material file format was developed de novo to more readily describe the complexity of nanomaterials and associated small molecules. In this paper, we have discussed the main features of each file format and how to use them for sharing nanomaterial descriptions and assay metadata. Conclusion The ISA-TAB-Nano file formats provide a general and flexible framework to record and integrate nanomaterial descriptions, assay data (metadata and endpoint measurements) and protocol information. Like ISA-TAB, ISA-TAB-Nano supports the use of ontology terms to promote standardized descriptions and to facilitate search and integration of the data. The ISA-TAB-Nano specification has been submitted as an ASTM work item to obtain community feedback and to provide a nanotechnology data-sharing standard for public development and adoption. PMID

Evaluation of layered and mixed passive treatment systems for acid mine drainage.

Science.gov (United States)

Jeen, Sung-Wook; Mattson, Bruce

2016-11-01

Laboratory column tests for passive treatment systems for mine drainage from a waste rock storage area were conducted to evaluate suitable reactive mixture, system configuration, effects of influent water chemistry, and required residence time. Five columns containing straw, chicken manure, mushroom compost, and limestone (LS), in either layered or mixed configurations, were set up to simulate the treatment system. The results showed that all of the five columns removed metals of concern (i.e. Al, Cd, Co, Cu, Fe, Ni, and Zn) with a residence time of 15 h and greater. Reaction mechanisms responsible for the removal of metals may include sulfate reduction and subsequent sulfide precipitation, precipitation of secondary carbonates and hydroxides, co-precipitation, and sorption on organic substrates and secondary precipitates. The results suggest that the mixed systems containing organic materials and LS perform better than the layered systems, sequentially treated by organic and LS layers, due to the enhanced pH adjustment, which is beneficial to bacterial activity and precipitation of secondary minerals. The column tests provide a basis for the design of a field-scale passive treatment system, such as a reducing and alkalinity producing system or a permeable reactive barrier.

Fabrication of nano-sized metal patterns on flexible polyethylene-terephthalate substrate using bi-layer nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Hwang, Seon Yong; Jung, Ho Yong [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jeong, Jun-Ho [Nano-Mechanical Systems Research Center, Korea Institute of Machinery and Materials, Yuseong-gu Daejeon, 305-343 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.k [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

2009-05-29

Polymer films are widely used as a substrate for displays and for solar cells since they are cheap, transparent and flexible, and their material properties are easy to design. Polyethylene-terephthalate (PET) is especially useful for various applications requiring transparency, flexibility and good thermal and chemical resistance. In this study, nano-sized metal patterns were fabricated on flexible PET film by using nanoimprint lithography (NIL). Water-soluble poly-vinyl alcohol (PVA) resin was used as a planarization and sacrificial layer for the lift-off process, as it does not damage the PET films and can easily be etched off by using oxygen plasma. NIL was used to fabricate the nano-sized patterns on the non-planar or flexible substrate. Finally, a nano-sized metal pattern was successfully formed by depositing the metal layer over the imprinted resist patterns and applying the lift-off process, which is economic and environmentally friendly, to the PET films.

Influence of cutting parameters on the depth of subsurface deformed layer in nano-cutting process of single crystal copper.

Science.gov (United States)

Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Su, Hao; Wang, Zhiguo; Xie, Wenkun

2015-12-01

Large-scale molecular dynamics simulation is performed to study the nano-cutting process of single crystal copper realized by single-point diamond cutting tool in this paper. The centro-symmetry parameter is adopted to characterize the subsurface deformed layers and the distribution and evolution of the subsurface defect structures. Three-dimensional visualization and measurement technology are used to measure the depth of the subsurface deformed layers. The influence of cutting speed, cutting depth, cutting direction, and crystallographic orientation on the depth of subsurface deformed layers is systematically investigated. The results show that a lot of defect structures are formed in the subsurface of workpiece during nano-cutting process, for instance, stair-rod dislocations, stacking fault tetrahedron, atomic clusters, vacancy defects, point defects. In the process of nano-cutting, the depth of subsurface deformed layers increases with the cutting distance at the beginning, then decreases at stable cutting process, and basically remains unchanged when the cutting distance reaches up to 24 nm. The depth of subsurface deformed layers decreases with the increase in cutting speed between 50 and 300 m/s. The depth of subsurface deformed layer increases with cutting depth, proportionally, and basically remains unchanged when the cutting depth reaches over 6 nm.

Influence of volume percentage of NanoTiB2 particles on tribological & mechanical behaviour of 6061-T6 Al alloy nano-surface composite layer prepared via friction stir process

Directory of Open Access Journals (Sweden)

V. Kishan

2017-02-01

Full Text Available The aim of present study is to analyze the influence of volume percentage (vol.% of nano-sized particles (TiB2: average size is 35 nm on microstructure, mechanical and tribological behavior of 6061-T6 Al alloy surface nano composite prepared via Friction stir process (FSP. The microstructure of the fabricated surface nanocomposites is examined using optical microscopy (OM and scanning electron microscope (SEM for distribution of TiB2 nano reinforcement particles, thickness of nano composite layer formed on the Aluminum alloy substrate and fracture features. The depth of surface nano composite layer is measured as 3683.82 μm along the cross section of stir zone of nano composite perpendicular to FSP. It was observed that increase in volume percentage of TiB2 particles, the microhardness is increased up to 132 Hv and it is greater than as-received Al alloy's microhardness (104 Hv. It is also observed that at 4 volume percentage higher tensile properties exhibited as compared with the 2 and 8 vol. %. It is found that high wear resistance exhibited at 4 volume percentage as-compared with the 2 and 8 vol. %. The observed wear and mechanical properties are interrelated with microstructure, fractography and worn morphology.

Fabrication of a Ni nano-imprint stamp for an anti-reflective layer using an anodic aluminum oxide template.

Science.gov (United States)

Park, Eun-Mi; Lim, Seung-Kyu; Ra, Senug-Hyun; Suh, Su-Jung

2013-11-01

Aluminum anodizing can alter pore diameter, density distribution, periodicity and layer thickness in a controlled way. Because of this property, porous type anodic aluminum oxide (AAO) was used as a template for nano-structure fabrication. The alumina layer generated at a constant voltage increased the pore size from 120 nm to 205 nm according to an increasing process time from 60 min to 150 min. The resulting fabricated AAO templates had pore diameters at or less than 200 nm. Ni was sputtered as a conductive layer onto this AAO template and electroplated using DC and pulse power. Comparing these Ni stamps, those generated from electroplating using on/reverse/off pulsing had an ordered pillar array and maintained the AAO template morphology. This stamp was used for nano-imprinting on UV curable resin coated glass wafer. Surface observations via electron microscopy showed that the nano-imprinted patterned had the same shape as the AAO template. A soft mold was subsequently fabricated and nano-imprinted to form a moth-eye structure on the glass wafer. An analysis of the substrate transmittance using UV-VIS/NIR spectroscopy showed that the transmittance of the substrate with the moth-eye structure was 5% greater that the non-patterned substrate.

Electronic properties and mechanical strength of β-phosphorene nano-ribbons

Energy Technology Data Exchange (ETDEWEB)

Swaroop, Ram; Bhatia, Pradeep; Kumar, Ashok, E-mail: ashok@cup.ac.in [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India-151001 (India)

2016-05-06

We have performed first principles calculations to find out the effect of mechanical strain on the electronic properties of zig-zag edged nano ribbons of β-phosphorene. It is found that electronic band-gap get opened-up to 2.61 eV by passivation of the edges of ribbons. Similarly, the mechanical strength is found to be increase from 1.75 GPa to 2.65 GPa on going from unpassivated nano ribbons to passivated ones along with the 2% increase in ultimate tensile strain. The band-gap value of passivated ribbon gets decreased to 0.43 eV on applying strain up to which the ribbon does not break. These tunable properties of β-phospherene with passivation with H-atom and applying mechanical strain offer its use in tunable nano electronics.

Preparation and characterization of poly(lactic acid)/ zinc-aluminium layered double hydroxide nano composites

International Nuclear Information System (INIS)

Eili Mahboobeh; Wan Mohd Zin Wan Yunus; Zobir Hossein; Mansor Ahmad; Norazowa Ibrahim

2009-01-01

Full text: Poly (lactic acid)/ stearate - zinc aluminum layered double hydroxide/ (PLA/ SZnAl LDH) nano composites were prepared via solution intercalation process using a modified ZnAl LDH. The anionic clay Zn 3 Al-NO 3 -LDH was prepared by a co-precipitation method and then modified with stearate ions by ion exchange process. Stearate-ZnAl LDH particles were then homogeneously dispersed in PLA matrix by a solution casting method. The pristine and modified ZnAl LDH was characterized by X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectroscopy which suggested that the modification was successful. The XRD analysis showed that during modification of LDH, the basal spacing increased from 8.83 Angstrom to 40.1 Angstrom. The PLA/ ZnAl LDH nano composites were characterized by tensile testing and XRD. The obtained nano composites showed dramatic enhancements in elongation at break as compared to those of the pure PLA. XRD results indicated that the materials formed are nano composites. (author)

[Spectroscopic study on film formation mechanism and structure of composite silanes-V-Zr passive film].

Science.gov (United States)

Wang, Lei; Liu, Chang-sheng; Shi, Lei; An, Cheng-qiang

2015-02-01

A composite silanes-V-Zr passive film was overlayed on hot-dip galvanized steel. Attenuated total reflection Fourier transformed infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectrometer (XPS) and radio frequency glow discharge optical emission spectrometry (rf-GD-OES) were used to characterize the molecular structure of the silanes-V-Zr passive film. The mechanism of film formation was discussed: The results show that the silane molecules are crosslinked as the main film former and inorganic inhibitor is even distributed in the film. The fitting peak of 100.7 eV in XPS single Si2p energy range spectra of the composite silanes-V-Zr passive film and the widening and strengthening of the Si--O infrared absorption peak at 1100 cm(-1) indicate that the silanes were adsorbed on the surface of zinc with chemical bond of Si--O--Zn, and the silane molecules were connected with each other by bond of Si--O--Si. Two characteristic absorption peaks of amide at 1650 and 1560 cm(-1) appear in the infrared spectroscopy of the composite silanes-V-Zr passive film, and a characteristic absorption peak of epoxy groups at 910 cm(-1) disappears in the infrared spectroscopy of the passive film. The results indicate that gamma-APT can be prepared through nucleophilic ring-opening of ethylene oxide in gamma-GPT molecule to form C--N covalent bonds. The rf-GD-OES results indicate that there is a oxygen enriched layer in 0.3 microm depth of the composite silanes-V-Zr passive film. Moreover, ZrF4, ZrO2 and some inorganic matter obtained by the reaction during the forming processof the composite silanes-V-Zr passive film are distributed evenly throughout the film. According to the film composition, the physical processes and chemical reactions during the film forming process were studied by using ATR-FTIR. Based on this, the film forming mechanism was proposed.

Silver nanoparticles-incorporated Nb2O5 surface passivation layer for efficiency enhancement in dye-sensitized solar cells.

Science.gov (United States)

Suresh, S; Unni, Gautam E; Satyanarayana, M; Sreekumaran Nair, A; Mahadevan Pillai, V P

2018-08-15

Guiding and capturing photons at the nanoscale by means of metal nanoparticles and interfacial engineering for preventing back-electron transfer are well documented techniques for performance enhancement in excitonic solar cells. Drifting from the conventional route, we propose a simple one-step process to integrate both metal nanoparticles and surface passivation layer in the porous photoanode matrix of a dye-sensitized solar cell. Silver nanoparticles and Nb 2 O 5 surface passivation layer are simultaneously deposited on the surface of a highly porous nanocrystalline TiO 2 photoanode, facilitating an absorption enhancement in the 465 nm and 570 nm wavelength region and a reduction in back-electron transfer in the fabricated dye-sensitized solar cells together. The TiO 2 photoanodes were prepared by spray pyrolysis deposition method from a colloidal solution of TiO 2 nanoparticles. An impressive 43% enhancement in device performance was accomplished in photoanodes having an Ag-incorporated Nb 2 O 5 passivation layer as against a cell without Ag nanoparticles. By introducing this idea, we were able to record two benefits - the metal nanoparticles function as the absorption enhancement agent, and the Nb 2 O 5 layer as surface passivation for TiO 2 nanoparticles and as an energy barrier layer for preventing back-electron transfer - in a single step. Copyright © 2018 Elsevier Inc. All rights reserved.

Accessing the nanostructural analysis network organisation (NANO)

International Nuclear Information System (INIS)

Hicks, R.; Ringer, S.

2003-01-01

Full text: As a Major National Research Facility (MNRF), NANO unites five Australian microscopy and microanalysis centres to form the peak Australian facility for nanometric analysis of the structure and chemistry of materials. NANO is headquartered at the Australian Key Centre for Microscopy and Microanalysis at the University of Sydney and involves the Centres for Microscopy and Microanalysis at the Universities of Queensland and Western Australia, the Electron Microscope Unit at the University of New South Wales and the Microanalytical Research Centre at the University of Melbourne. Together these major centres maintain a wide range of complementary instrumentation for the characterisation of nanostructure. NANO links them into a co-ordinated national facility with unified charges and booking systems. The facility will provide open access to a wide range of present and future partners involving local and international linkages. For this reason, NANO is designed to allow the incorporation of other groups as additional nodes. All Australian researchers are eligible to apply for support to use NANO through the Travel and Access Program (NANO-TAP), which will support basic travel and accommodation costs as well as instrument time. Access to the national grid may involve on-site presence at a particular node or remote telemicroscopy. Both passive (observation) and active (operation) modes of telemicroscopy are available. This presentation will address the NANO-TAP application procedure, the use of remote telemicroscopy and the formation of additional nodes. Copyright (2003) Australian Microbeam Analysis Society

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

Science.gov (United States)

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

Formation of nano quasicrystalline and crystalline phases by mechanical alloying

International Nuclear Information System (INIS)

Shamah, A.M.; Ibrahim, S.; Hanna, F.F.

2011-01-01

Research highlights: → Mechanical alloying (MA) is an important method to investigate the formation of nano sized quasicrystalline phases in Al 86 Cr 14 , Al 84 Fe 16 and Al 62.5 Cu 25 Fe 12.5 compounds. The second part of the present work is an attempt to examine the possibility of formation of the i-phase of the Al 62.5 Cu 25 Fe 12.5 , which lies in the region of the perfect i-phase in the ternary phase diagram, by rapid solidification method. To perform the obtained quasi phase mechanical alloying and heat treatment at the rapid solidified sample were done. - Abstract: In the present work, the formation of nano quasicrystalline icosahedral phase in Al 86 Cr 14 , Al 84 Fe 16 and Al 62.5 Cu 25 Fe 12.5 alloys has been investigated by mechanical alloying. Mixtures of quasicrystalline and related crystalline phases have been observed under various milling conditions. The X-ray diffraction, differential thermal analysis and electrical resistivity techniques have been used for characterization and physical property measurements. The particle size was calculated by X-ray profile using Williamson-Hall plot method and it was found to be 25-50 nm size.

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

Science.gov (United States)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

High performance multilayered nano-crystalline silicon/silicon-oxide light-emitting diodes on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Darbari, S; Shahmohammadi, M; Mortazavi, M; Mohajerzadeh, S [Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran (Iran, Islamic Republic of); Abdi, Y [Nano-Physics Research Laboratory, Department of Physics, University of Tehran, Tehran (Iran, Islamic Republic of); Robertson, M; Morrison, T, E-mail: mohajer@ut.ac.ir [Department of Physics, Acadia University, Wolfville, NS (Canada)

2011-09-16

A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.

Formation of carbon nano- and micro-structures on C+1 irradiated copper surfaces

International Nuclear Information System (INIS)

Ahmad, Shoaib

2013-01-01

A series of experiments has identified mechanisms of carbon nano- and micro-structure formation at room temperature, without catalyst and in the environment of immiscible metallic surroundings. The structures include threaded nano fibres, graphitic sheets and carbon onions. Copper as substrate was used due to its immiscibility with carbon. Energetic carbon ions (C + 1 ) of 0.2–2.0 MeV irradiated Cu targets. Cu substrates, apertures and 3 mm dia TEM Cu grids were implanted with the carbon. We observed wide range of μm-size structures formed on Cu grids and along the edges of the irradiated apertures. These are shown to be threaded nano fibers (TNF) of few μm thicknesses with lengths varying from 10 to 3000 μm. Secondary electron microscopy (SEM) identifies the μm-size structures while Confocal microscopy was used to learn about the mechanisms by which C + 1 irradiated Cu provides the growth environment. Huge carbon onions of diameters ranging from hundreds of nm to μm were observed in the as-grown and annealed samples. Transformations of the nanostructures were observed under prolonged electron irradiations of SEM and TEM. A mechanism for the formation of carbon nano- and micro-structures is proposed.

The nano-BIon in nanostructure

Energy Technology Data Exchange (ETDEWEB)

Sepehri, Alireza, E-mail: alireza.sepehri@uk.ac.ir [Nano Research Center of the Ferdowsi University, Mashhad (Iran, Islamic Republic of); Faculty of Physics, Shahid Bahonar University, P.O. Box 76175, Kerman (Iran, Islamic Republic of)

2016-04-01

Recently, some authors have considered the superconductivity in nano-cubes and shown that by decreasing the size of these systems, superconductivity order parameter increases. In this research, we show that the same result can be obtained in a nano-BIon which is a configuration of two layers of cuprates connected by an electronic tube. This tube is a channel for transporting energy and matter inside a superconductor and acts as a wormhole in this system. This wormhole-like-tube is formed by decreasing the separation distance between layers of nano-cuprate and enhancing the cooper hopping pairing between layers. We estimate the critical temperature of superconductor and find that it depends on the size of nano-BIon and coupling between atoms in a layer. Also, we observe that external magnetic field generates a new tube which causes losing the energy density of nano-BIon between two layers and decreasing critical temperature of superconductor.

Thermal Stress Behavior of Micro- and Nano-Size Aluminum Films

International Nuclear Information System (INIS)

Hanabusa, T.; Kusaka, K.; Nishida, M.

2008-01-01

In-situ observation of thermal stresses in thin films deposited on silicon substrate was made by X-ray and synchrotron radiation. Specimens prepared in this experiment were micro- and nano-size thin aluminum films with and without passivation film. The thickness of the film was 1 micrometer for micro-size films and 10, 20 and 50 nanometer for nano-size films. The stress measurement in micro-size films was made by X-ray radiation whereas the measurement of nano-size films was made by synchrotron radiation. Residual stress measurement revealed tensile stresses in all as-deposited films. Thermal stresses were measured in a series of heating- and cooling-stage. Thermal stress behavior of micro-size films revealed hysteresis loop during a heating and cooling process. The width of a hysteresis loop was larger in passivated film that unpassivated film. No hysteresis loops were observed in nano-size films with SiO 2 passivation. Strengthning mechanism in thin films was discussed on a passivation film and a film thickness

Formation of Lanthanum Hydroxide nano structures: Effect of NaOH and KOH solvents

International Nuclear Information System (INIS)

Mazloumi, M.; Zanganeh, S.; Kajbafvala, A.; Shayegh, M. R.; Sadrnezhaad, S. K.

2008-01-01

Lanthanum hydroxide (La(OH) 3 ) nano structures, including elliptical nanoparticles, octahedral rods and irregular nanoparticles were prepared chemically in NaOH and KOH solutions with 10 M concentration. The obtained powders were characterized with x-ray diffraction, scanning electron microscopy, transmission electron microscopy and differential thermal analysis. Crystallinities, morphologies and thermal behavior of the obtained nano structure powders were investigated under the influence of above mentioned solvents. The effect of chemical's temperature was also determined in one of the solvents (i.e. NaOH). The formation of growth in nano structure mechanism under the influence of alkali solutions (i.e., KOH and NaOH) have been discussed considerably in this paper

Insulated InP (100) semiconductor by nano nucleus generation in pure water

Science.gov (United States)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

Nano-silica as the go material on heat resistant tunnel lining

Science.gov (United States)

Omar, Faizah; Osman, S. A.; Mutalib, A.

2018-04-01

This paper is concerned with passive fire protection method of protective concrete mix that is made up of fly ash, polypropylene fibre, and nano-silica. Nano-silica is focused on as the innovative material to be used in the composition of the protective concrete mix. The previous experimental studies which analyse the performance of passive fire protection on tunnels are discussed. This paper also discusses passive fire protection. The fire protection materials and behaviour analyses of tunnel structure are also presented. At the end of the paper, the recommendation of the optimum composition concrete material with fly ash, polypropylene fibre and nano-silica as tunnel lining fire protective materials is proposed.

Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cells

NARCIS (Netherlands)

Macco, Bart; Black, Lachlan E.; Melskens, Jimmy; van de Loo, Bas W.H.; Berghuis, Willem Jan H.; Verheijen, Marcel A.; Kessels, Wilhelmus M.M.

2018-01-01

Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells.

Science.gov (United States)

Zhang, Fan; Song, Jun; Hu, Rui; Xiang, Yuren; He, Junjie; Hao, Yuying; Lian, Jiarong; Zhang, Bin; Zeng, Pengju; Qu, Junle

2018-05-01

Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (V OC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of high-aspect-ratio nano structures using a nano x-ray shadow mask

International Nuclear Information System (INIS)

Kim, Yong Chul; Lee, Seung S

2008-01-01

This paper describes a novel method for the fabrication of high-aspect-ratio nano structures (HAR-nano structures) using a nano x-ray shadow mask and deep x-ray lithography (DXRL). The nano x-ray shadow mask is fabricated by depositing an x-ray absorber layer (Au, 3 µm) onto the back side of a nano shadow mask. The nano shadow mask is produced with nano-sized apertures whose dimensions are reduced to several tens of nanometers by the accumulation of low-stress silicon nitride (Si x N y ) using the LPCVD process on the shadow mask. A shadow mask containing apertures with a size of 1 µm is fabricated on a bulk micromachined Si x N y membrane. The thickness of an absorber layer must be in the range of several tens of micrometers in order to obtain a contrast of more than 100 for the conventional DXRL process at the Pohang Light Source (PLS). However, a 3 µm thick absorber layer can provide a sufficient contrast if the modified DXRL of the central beam-stop method is used, which blocks high-energy x-rays. A nano shadow mask with 30 nm sized apertures is fabricated and a nano x-ray shadow mask with 250 nm sized apertures is fabricated by depositing a 3 µm thick absorber layer on a nano shadow mask with 500 nm sized apertures. HAR-nano structures (circles with a diameter of 420 nm and lines with a width of 274 nm) with aspect ratios of over 10:1 on a 3.2 µm SU-8 are successfully fabricated by using the nano x-ray shadow mask and the central beam-stop method

Layer-by-Layer Assembly of Biopolyelectrolytes onto Thermo/pH-Responsive Micro/Nano-Gels

Directory of Open Access Journals (Sweden)

Ana M. Díez-Pascual

2014-11-01

Full Text Available This review deals with the layer-by-layer (LbL assembly of polyelectrolyte multilayers of biopolymers, polypeptides (i.e., poly-l-lysine/poly-l-glutamic acid and polysaccharides (i.e., chitosan/dextran sulphate/sodium alginate, onto thermo- and/or pH-responsive micro- and nano-gels such as those based on synthetic poly(N-isopropylacrylamide (PNIPAM and poly(acrylic acid (PAA or biodegradable hyaluronic acid (HA and dextran-hydroxyethyl methacrylate (DEX-HEMA. The synthesis of the ensembles and their characterization by way of various techniques is described. The morphology, hydrodynamic size, surface charge density, bilayer thickness, stability over time and mechanical properties of the systems are discussed. Further, the mechanisms of interaction between biopolymers and gels are analysed. Results demonstrate that the structure and properties of biocompatible multilayer films can be finely tuned by confinement onto stimuli-responsive gels, which thus provides new perspectives for biomedical applications, particularly in the controlled release of biomolecules, bio-sensors, gene delivery, tissue engineering and storage.

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

Science.gov (United States)

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

Science.gov (United States)

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

GISAXS modelling of helium-induced nano-bubble formation in tungsten and comparison with TEM

Science.gov (United States)

Thompson, Matt; Sakamoto, Ryuichi; Bernard, Elodie; Kirby, Nigel; Kluth, Patrick; Riley, Daniel; Corr, Cormac

2016-05-01

Grazing-incidence small angle x-ray scattering (GISAXS) is a powerful non-destructive technique for the measurement of nano-bubble formation in tungsten under helium plasma exposure. Here, we present a comparative study between transmission electron microscopy (TEM) and GISAXS measurements of nano-bubble formation in tungsten exposed to helium plasma in the Large Helical Device (LHD) fusion experiment. Both techniques are in excellent agreement, suggesting that nano-bubbles range from spheroidal to ellipsoidal, displaying exponential diameter distributions with mean diameters μ=0.68 ± 0.04 nm and μ=0.6 ± 0.1 nm measured by TEM and GISAXS respectively. Depth distributions were also computed, with calculated exponential depth distributions with mean depths of 8.4 ± 0.5 nm and 9.1 ± 0.4 nm for TEM and GISAXS. In GISAXS modelling, spheroidal particles were fitted with an aspect ratio ε=0.7 ± 0.1. The GISAXS model used is described in detail.

Analysis of white layers formed in hard turning of AISI 52100 steel

International Nuclear Information System (INIS)

Ramesh, A.; Melkote, S.N.; Allard, L.F.; Riester, L.; Watkins, T.R.

2005-01-01

The formation mechanisms and properties of white layers produced in machining of hardened steels are not clearly understood to date. In particular, detailed analysis of their structure and mechanical properties is lacking. This paper investigates the differences in structure and properties of white layers formed during machining of hardened AISI 52100 steel (62 HRC) at different cutting speeds. A combination of experimental techniques including transmission electron microscopy (TEM), X-ray diffraction (XRD), and nano-indentation are used to analyze the white layers formed. TEM results suggest that white layers produced at low-to-moderate cutting speeds are in large part due to grain refinement induced by severe plastic deformation, whereas white layer formation at high cutting speeds is mainly due to thermally-driven phase transformation. The white layers at all speeds are found to be comprised of very fine (nano-scale) grains compared to the bulk material. XRD-based residual stress and retained austenite measurements, and hardness data support these findings

Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2014-01-01

We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN x ) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH 3 molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN x /P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN x passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN x films. The outstanding results obtained imply that SiN x /P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

Comparison of tungsten nano-tendrils grown in Alcator C-Mod and linear plasma devices

International Nuclear Information System (INIS)

Wright, G.M.; Brunner, D.; Baldwin, M.J.; Bystrov, K.; Doerner, R.P.; Labombard, B.; Lipschultz, B.; De Temmerman, G.; Terry, J.L.; Whyte, D.G.; Woller, K.B.

2013-01-01

Growth of tungsten nano-tendrils (“fuzz”) has been observed for the first time in the divertor region of a high-power density tokamak experiment. After 14 consecutive helium L-mode discharges in Alcator C-Mod, the tip of a tungsten Langmuir probe at the outer strike point was fully covered with a layer of nano-tendrils. The depth of the W fuzz layer (600 ± 150 nm) is consistent with an empirical growth formula from the PISCES experiment. Re-creating the C-Mod exposures as closely as possible in Pilot-PSI experiment can produce nearly-identical nano-tendril morphology and layer thickness at surface temperatures that agree with uncertainties with the C-Mod W probe temperature data. Helium concentrations in W fuzz layers are measured at 1–4 at.%, which is lower than expected for the observed sub-surface voids to be filled with several GPa of helium pressure. This possibly indicates that the void formation is not pressure driven

Formation of nano quasicrystalline and crystalline phases by mechanical alloying

Energy Technology Data Exchange (ETDEWEB)

Shamah, A.M.; Ibrahim, S. [Faculty of Petroleum and Mining Engineering, Suez Canal University, Suez (Egypt); Hanna, F.F., E-mail: fariedhanna@yahoo.com [Faculty of Petroleum and Mining Engineering, Suez Canal University, Suez (Egypt)

2011-02-03

Research highlights: > Mechanical alloying (MA) is an important method to investigate the formation of nano sized quasicrystalline phases in Al{sub 86}Cr{sub 14}, Al{sub 84}Fe{sub 16} and Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} compounds. The second part of the present work is an attempt to examine the possibility of formation of the i-phase of the Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}, which lies in the region of the perfect i-phase in the ternary phase diagram, by rapid solidification method. To perform the obtained quasi phase mechanical alloying and heat treatment at the rapid solidified sample were done. - Abstract: In the present work, the formation of nano quasicrystalline icosahedral phase in Al{sub 86}Cr{sub 14}, Al{sub 84}Fe{sub 16} and Al{sub 62.5}Cu{sub 25}Fe{sub 12.5} alloys has been investigated by mechanical alloying. Mixtures of quasicrystalline and related crystalline phases have been observed under various milling conditions. The X-ray diffraction, differential thermal analysis and electrical resistivity techniques have been used for characterization and physical property measurements. The particle size was calculated by X-ray profile using Williamson-Hall plot method and it was found to be 25-50 nm size.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

Science.gov (United States)

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

International Nuclear Information System (INIS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

2017-01-01

Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO_x passivation layer and Al_2O_3 gate dielectric was fabricated. • The detrimental SiO_x interfacial layer could be effectively restrained by the LaSiO_x passivation layer. • The passivation mechanism of LaSiO_x was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO_x passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO_x) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO_x) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al_2O_3 gate dielectric. The interfacial LaSiO_x formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO_x passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO_x passivation interlayer can effectively restrain SiO_x formation and improve the Al_2O_3/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

Energy Technology Data Exchange (ETDEWEB)

Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

2017-07-15

Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO{sub x} passivation layer and Al{sub 2}O{sub 3} gate dielectric was fabricated. • The detrimental SiO{sub x} interfacial layer could be effectively restrained by the LaSiO{sub x} passivation layer. • The passivation mechanism of LaSiO{sub x} was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO{sub x} passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO{sub x}) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO{sub x}) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al{sub 2}O{sub 3} gate dielectric. The interfacial LaSiO{sub x} formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO{sub x} passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO{sub x} passivation interlayer can effectively restrain SiO{sub x} formation and improve the Al{sub 2}O{sub 3}/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

Pulsed Laser Interactions with Silicon Nano structures in Emitter Formation

International Nuclear Information System (INIS)

Huat, V.L.C.; Leong, C.S.; Kamaruzzaman Sopian, Saleem Hussain Zaidi

2015-01-01

Silicon wafer thinning is now approaching fundamental limits for wafer thickness owing to thermal expansion mismatch between Al and Si, reduced yields in wet-chemical processing as a result of fragility, and reduced optical absorption. An alternate manufacturing approach is needed to eliminate current manufacturing issues. In recent years, pulsed lasers have become readily available and costs have been significantly reduced. Pulsed laser interactions with silicon, in terms of micromachining, diffusions, and edge isolation, are well known, and have become industrial manufacturing tools. In this paper, pulsed laser interactions with silicon nano structures were identified as the most desirable solution for the fundamental limitations discussed above. Silicon nano structures have the capability for extremely high absorption that significantly reduces requirements for laser power, as well as thermal shock to the thinner wafer. Laser-assisted crystallization, in the presence of doping materials, leads to nano structure profiles that are highly desirable for sunlight absorption. The objective of this paper is the replacement of high temperature POCl_3 diffusion by laser-assisted phosphorus layers. With these improvements, complete low-temperature processing of thinner wafers was achievable with 3.7 % efficiency. Two-dimensional laser scanning was proved to be able to form uniformly annealed surfaces with higher fill factor and open-circuit voltage. (author)

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

International Nuclear Information System (INIS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-01-01

Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

Science.gov (United States)

Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

2018-01-09

Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

Influence of layer eccentricity on the resonant properties of cylindrical active coated nano-particles

DEFF Research Database (Denmark)

Thorsen, R. O.; Arslanagic, Samel

2015-01-01

We report on the influence of the layer eccentricity on the resonant properties of active coated nano-particles made of a silver core and gain impregnated silica shell illuminated by a near-by magnetic line source. For a fixed over-all size of the particle, designs with small and large cores...

CEMS and XRD studies on changing shape of iron nano-particles by irradiation of Au ions of Fe-implanted Al2O3 granular layer

International Nuclear Information System (INIS)

Kato, T.; Wakabayashi, H.; Hashimoto, M.; Toriyama, T.; Taniguchi, S.; Hayashi, N.; Sakamoto, I.

2007-01-01

In order to observe an inverse Ostwald ripening of Fe nano-particles in Fe-implanted Al 2 O 3 granular layers, 3 MeV Au ions were irradiated to Fe nano-particles in these layers with doses of 0.5x and 1.5x10 16 ions/cm 2 . It was found by Conversion Electron Mossbauer Spectroscopy (CEMS) that the inverse Ostwald ripening occurred by fractions of percentages and the magnetic anisotropy of Fe nano-particles was induced to the direction of Au ion beam, i.e. perpendicular to the granular plane. The average crystallite diameters of Fe nano-particles for Au ions unirradiated and irradiated samples were measured using Scherrer's formula from FWHM of Fe (110) X-ray Diffraction (XRD) patterns obtained by 2θ and 2θ/θ methods. It was confirmed that the average crystallite diameters of Fe nano-particles in Fe-implanted Al 2 O 3 granular layers were extended by Au ions irradiation. (author)

Thiolated polyethylene oxide as a non-fouling element for nano-patterned bio-devices

International Nuclear Information System (INIS)

Lisboa, Patricia; Valsesia, Andrea; Colpo, Pascal; Gilliland, Douglas; Ceccone, Giacomo; Papadopoulou-Bouraoui, Andri; Rauscher, Hubert; Reniero, Fabiano; Guillou, Claude; Rossi, Francois

2007-01-01

This work describes the synthesis of a thiolated polyethylene oxide that self-assembles on gold to create a non-fouling surface. Thiolated polyethylene oxide was synthesised by reacting 16-mercaptohexadecanoic acid with polyethylene glycol mono methyl ether. The coverage of the thiolated polyethylene oxide on gold was studied by cyclic voltammetry, and the modified surfaces were characterised by X-ray photoelectron spectroscopy and ellipsometry. Protein resistance was assessed using quartz crystal microbalance. Results showed a non-fouling character produced by the thiolated polyethylene oxide. The synthesised product was used as the passivation layer on nano-patterned surfaces consisting of arrayed nano-spots, fabricated by plasma based colloidal lithography. The specific adsorption of anti-bovine serum albumin in the mercaptohexadecanoic acid spots was verified by atomic force microscopy

Game Design Document Format For Video Games With Passive Dynamic Difficulty Adjustment

Directory of Open Access Journals (Sweden)

Pratama Wirya Atmaja

2016-07-01

satisfaction of its players is the primary mean to measure its quality. One important element of player’s satisfaction is a proper difficulty level, which is neither too easy nor too hard. The current state-of-the-art way to implement it is with Dynamic Difficulty Adjustment (DDA, which allows the difficulty level of a video game to be adjusted at run-time. Currently, the most popular type of DDA is the passive one. Meanwhile, Game Design Document (GDD is an important artefact in the development process of a video game software, and there is still no GDD format that supports the design of passive DDA mechanism. The aim of this research was to find a new GDD format that supports the mechanism. We modified a general purpose GDD format by adding new parts for designing passive DDA mechanism. We tested the usefulness of the modified format in a testing process involving developers and players. The developers developed video games using the modified GDD format and the general purpose one. Their development processes were observed and evaluated to know if there were any difficulties. The resulting video games were played by the players to find which are better in terms of passive DDA mechanism. The result of developer testing showed that the modified format is better than the general purpose one. The result of player testing showed that the video games made with the modified format are better than their counterparts, albeit by an insignificant margin. Based on the results, we declare that the modified GDD format is successful.Keywords: Video game, requirement engineering, game design document, dynamic difficulty adjustment, software development.

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

OpenAIRE

Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

2012-01-01

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

Preparation and thermal performance of paraffin/Nano-SiO2 nanocomposite for passive thermal protection of electronic devices

International Nuclear Information System (INIS)

Wang, Yaqin; Gao, Xuenong; Chen, Peng; Huang, Zhaowen; Xu, Tao; Fang, Yutang; Zhang, Zhengguo

2016-01-01

Highlights: • Three types of paraffin/nano-SiO 2 nanocomposites were prepared and characterized. • Thermo-physical properties of these composites were determined and compared. • One composite with lower thermal conductivity showed better thermal insulation properties. • This composite was identified as thermal insulation material for electronic components. - Abstract: In this paper, three grades of nano silicon dioxide (nano-SiO 2 ), NS1, NS2 and NS3, were mixed into paraffin to prepare nanocomposites as novel insulation materials for electronic passive thermal protection applications. The optimal mass percentages of paraffin for the three composites, NS1P, NS2P and NS3P, were determined to be 75%, 70% and 65%, respectively. Investigations by means of scanning electron micrographs (SEM), differential scanning calorimeter (DSC), thermogravimetric analysis (TG), hot disk analyzer and thermal protection performance tests were devoted to the morphology, thermal properties and thermal protection performance analysis of composites. Experimental results showed that paraffin uniformly distributed into the pores and on the surface of nano-SiO 2 . Melting points of composites declined and experimental latent heat became lower than the calculated values with the decrease of nano-SiO 2 pore size. The NS1P composite had larger thermal storage capacity, better reliability and stability compared with NS2P and NS3P. In addition, compared with 90% wt.% paraffin/EG composite, the incorporation of NS1 (25 wt.%) into paraffin caused not only 63.2% reduction in thermal conductivity, but also 21.8% increase in thermal protection time affected by the ambient temperature. Thus those good properties confirmed that NS1P (75 wt.%) composite was a viable candidate for protecting electronic devices under high temperature environment.

Real-time optical modelling and investigation of inorganic nano-layer growth onto flexible polymeric substrates

International Nuclear Information System (INIS)

Laskarakis, A.; Georgiou, D.; Logothetidis, S.

2010-01-01

A major factor for the achievement of the desirable performance, efficiency and lifetime of flexible organic electronic devices is the optimization of the encapsulation layers that protect the device active layers by atmospheric gas molecule permeation. The active layers consisted of small molecule and/or polymer organic semiconductors as well as the organic conductors need to be encapsulated into a transparent medium that will provide the necessary protection and maintain their charge generation and transport characteristics. The encapsulation layers are generally consisted of inorganic thin films (silicon oxide-SiO x and aluminium oxide-AlO x ) deposited onto the polymeric substrates, such as PolyEthylene Terephthalate (PET). In this work, in situ and real-time Spectroscopic Ellipsometry in the ultraviolet spectral region has been implemented in order to investigate the growth of inorganic SiO x and AlO x nano-layers onto PET flexible polymeric substrates as well as the PET/inorganic interface effects during the early stages of growth. The analysis of the pseudodielectric function that was measured in real-time in very short time scales (in the order of hundreds of ms) has provided detailed information on the time evolution of the thickness and deposition rate of the inorganic nano-layers during their growth process as well as on their optical and electronic properties. This work proposes a methodology for using real-time optical monitoring technique with the aim to tailor and control the functionality of these materials for application in flexible electronic devices.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

Science.gov (United States)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

Science.gov (United States)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

Improved Thermally Grown Oxide Scale in Air Plasma Sprayed NiCrAlY/Nano-YSZ Coatings

International Nuclear Information System (INIS)

Daroonparvar, M.; Yajid, M.A.M.; Yusof, N.M.; Hussain, M.S.

2013-01-01

Oxidation has been considered as one of the principal disruptive factors in thermal barrier coating systems during service. So, oxidation behavior of thermal barrier coating (TBC) systems with nano structured and micro structured YSZ coatings was investigated at 1000 degree c for 24 h, 48 h, and 120 h. Air plasma sprayed nano-YSZ coating exhibited a tri modal structure. Microstructural characterization also demonstrated an improved thermally grown oxide scale containing lower spinels in nano-TBC system after 120 h of oxidation. This phenomenon is mainly related to the unique structure of the nano-YSZ coating, which acted as a strong barrier for oxygen diffusion into the TBC system at elevated temperatures. Nearly continues but thinner Al 2 O 3 layer formation at the NiCrAlY/nano-YSZ interface was seen, due to lower oxygen infiltration into the system. Under this condition, spinels formation and growth on the Al 2 O 3 oxide scale were diminished in nano-TBC system compared to normal TBC system.

Post-adsorption process of Yb phosphate nano-particle formation by Saccharomyces cerevisiae

Science.gov (United States)

Jiang, MingYu; Ohnuki, Toshihiko; Tanaka, Kazuya; Kozai, Naofumi; Kamiishi, Eigo; Utsunomiya, Satoshi

2012-09-01

In this study, we have investigated the post-adsorption process of ytterbium (Yb) phosphate nano-particle formation by Saccharomyces cerevisiae (yeast). The yeast grown in P-rich medium were exposed to 1.44 × 10-4 mol/L Yb(III) solution for 2-120 h, and 2 months at 25 ± 1 °C at an initial pH of 3, 4, or 5, respectively. Ytterbium concentrations in solutions decreased as a function of exposure time. Field-emission scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (FESEM), transmission electron microscopy (TEM), and synchrotron-based extended X-ray absorption fine structure (EXAFS) analyses revealed that nano-sized blocky Yb phosphate with an amorphous phase formed on the yeast cells surfaces in the solutions with Yb. These nano-sized precipitates that formed on the cell surfaces remained stable even after 2 months of exposure at 25 ± 1 °C around neutral pHs. The EXAFS data revealed that the chemical state of the accumulated Yb on the cell surfaces changed from the adsorption on both phosphate and carboxyl sites at 30 min to Yb phosphate precipitates at 5 days, indicating the Yb-phosphate precipitation as a major post-adsorption process. In addition, the precipitation of Yb phosphate occurred on cell surfaces during 7 days of exposure in Yb-free solution after 2 h of exposure (short-term Yb adsorption) in Yb solution. These results suggest that the released P from the inside of yeast cells reacted with adsorbed Yb on cell surfaces, resulting in the formation of Yb precipitates, even though no P was added to the exposure solution. In an abiotic system, the EXAFS data showed that the speciation of sorbed Yb on the reference materials, carboxymethyl cellulose and Ln resin, did not change even when the Yb was exposed to P solution, without forming Yb phosphate precipitates. This result strongly suggests that the cell surface of the yeast plays an important role in the Yb-phosphate precipitation process, not only as a carrier of the

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

International Nuclear Information System (INIS)

Conde, J.C.; Martín, E.; Stefanov, S.; Alpuim, P.; Chiussi, S.

2012-01-01

Highlights: ► nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. ► UV-ELA technique causes a rapid heating that provokes the H 2 desorption from the Si surface and bulk material. ► Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. ► These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO 2 . ► To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. ► The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25 ns pulse length and energy densities ranging from 50 mJ/cm 2 to 400 mJ/cm 2 have been calculated. Numerical results allowed us to estimate the dehydrogenation

SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

KAUST Repository

Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

2014-01-01

For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

Effect of nano-oxide layers on giant magnetoresistance in pseudo-spin-valves using Co2FeAl electrodes

International Nuclear Information System (INIS)

Zhang, D.L.; Xu, X.G.; Wu, Y.; Miao, J.; Jiang, Y.

2011-01-01

We studied the pseudo-spin-valves (PSVs) with a structure of Ta/Co 2 FeAl/NOL 1 /Co 2 FeAl/Cu/Co 2 FeAl/NOL 2 /Ta, where NOL represents the nano-oxide layer. Compared with the normal Co 2 FeAl (CFA) PSV with a structure of Ta/Co 2 FeAl/Cu/Co 2 FeAl/Ta, which shows only a current-in-plane (CIP) giant magnetoresistance (GMR) of 0.03%, the CFA PSV with NOLs shows a large CIP-GMR of 5.84%. The enhanced GMR by the NOLs inserted in the CFA PSV is due to the large specular reflection caused by [(CoO)(Fe 2 O 3 )(Al 2 O 3 )] in NOL 1 and [(Fe 2 O 3 )(Al 2 O 3 )(Ta 2 O 5 )] in NOL 2 . Another reason is that the roughness of the interface between Ta and CFA is improved by the oxidation procedure. - Research highlights: → Nano-oxide layers are applied in the pseudo-spin-valves with the Heusler alloy. → The CIP-GMR of pseudo-spin-valves is improved from 0.03% to 5.84%. → The GMR ratio is decided by the position of nano-oxide layers.

Synthesis and photophysical properties of pyrene-functionalized nano-SiO{sub 2} hybrids in solutions and doped-PMMA thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Wen-Jie; He, Wen-Li; Yu, Hong-Yu [Department of Chemistry, Fudan University, 220 Handan Road, Shanghai 200433 (China); Huang, Hong-Xiang [State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 220 Handan Road, Shanghai 200433 (China); Chen, Meng [Department of Chemistry, Fudan University, 220 Handan Road, Shanghai 200433 (China); Qian, Dong-Jin, E-mail: djqian@fudan.edu.cn [Department of Chemistry, Fudan University, 220 Handan Road, Shanghai 200433 (China)

2017-01-15

Luminescent pyrene-functionalized nano-SiO{sub 2} (nano-SiO{sub 2}Pyr) hybrids were synthesized and characterized using thermogravimetry, infrared, UV–vis absorption and, X-ray photoelectron spectroscopy, as well as field emission transmission electron microscopy (FETEM). The organic substituents immobilized on the nano-SiO{sub 2}Pyr hybrids accounted for approximately 10% of the total weight. Polyethylene glycol 200 (PEG200) was found to be the most suitable solvent to suspend the nano-SiO{sub 2}Pyr hybrids compared to other commonly used organic solvents. FETEM images indicated an average SiO{sub 2} nanoparticle diameter of approximately 12 nm and a 1- to 2-nm thick organic species functionalization layer. Several emission peaks were recorded at wavelengths of 380–580 nm and were designated as emissions arising from either the monomer or excimer of the pyrene substituents. Excimer formation was concentration and solvent polarity dependent, with higher concentrations and a stronger solvent polarity benefiting excimer formation. Further, nano-SiO{sub 2}Pyr hybrids were doped in poly(methyl methacrylate) (PMMA) thin films; fluorescence spectra indicated that the excimer could be formed almost exclusively from neighboring nano-SiO{sub 2}Pyr hybrids. Time-resolved fluorescence decays revealed that the emission lifetimes of nano-SiO{sub 2}Pyr monomers and excimers were approximately 190 ns and 65–100 ns in the PEG200 solution, respectively, which was shortened to 0.45 ns to tens of ns in doped PMMA thin films, depending on the nano-hybrid concentration. Thus, the present study not only provides a method to prepare luminescent nano-materials but also a route to investigate excimer formation in solutions and thin films. - Highlights: • Luminescent pyrene-functionalized nano-SiO{sub 2}Pyr hybrids were prepared. • A 1- to 2- nm thick organic functionalization layer on nano-SiO{sub 2} was observed. • Formation of pyrene excimer was concentration and solvent

Mechanism of formation of corrosion layers on nickel and nickel-based alloys in melts containing oxyanions--a review

International Nuclear Information System (INIS)

Tzvetkoff, Tzvety; Gencheva, Petia

2003-01-01

A review of the corrosion of Ni and Ni-based alloys in melts containing oxyanions (nitrate, sulphate, hydroxide and carbonate) is presented, emphasising the mechanism of growth, the composition and structure of the passivating oxide films formed on the material in such conditions. First, the thermodynamical background involving solubility and point defect chemistry calculations for oxides formed on Ni, Cr and Ni-Cr alloys in molten salt media is briefly commented. The main passivation product on the Ni surface has been reported to be cubic NiO. In the transition stage, further oxidation of the compact NiO layer has been shown to take place in which Ni(III) ions and nickel cation vacancies are formed. Transport of nickel cation vacancies has been proposed to neutralise the charges of the excess oxide ions formed in the further oxidation reaction. Ex situ analysis studies reported in the literature indicated the possible formation of Ni 2 O 3 phase in the anodic layer. During the third stage of oxidation, a survey of the published data indicated that oxygen evolution from oxyanion melts is the predominant reaction taking place on the Ni/NiO electrode. This has been supposed to lead to a further accumulation of oxygen ions in the oxide lattice presumably as oxygen interstitials, and a NiO 2 phase formation has been also suggested. Literature data on the composition of the oxide film on industrial Ni-based alloys and superalloys in melts containing oxyanions are also presented and discussed. Special attention is paid to the effect of the composition of the alloy, the molten salt mixture and the gas atmosphere on the stability and protective ability of corrosion layers

Investigation of novel fractal shape of the nano-aperture as a metasurface for bio sensing application

Energy Technology Data Exchange (ETDEWEB)

Heydari, Samaneh [Sama Technical and Vocational Training College, Islamic Azad University, Isfahan Branch, Khorasgan (Iran, Islamic Republic of); Rastan, Iman; Parvin, Amin [Faculty of Eng., Science and Research Branch, Islamic Azad University, Shiraz (Iran, Islamic Republic of); Pirooj, Azadeh [Faculty of Eng., Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zarrabi, Ferdows B., E-mail: ferdows.zarrabi@yahoo.com [Young Researchers and Elite Club, Babol Branch, Islamic Azad University, Babol (Iran, Islamic Republic of)

2017-01-23

Recently, nano-aperture is noticed due to its good transmission in the optical regime. Also, the nano-apertures are developed at the metasurface design for circular polarization; for this aim, various shapes of the nano-aperture are suggested. To reach this objective, we have developed a novel Jerusalem cross fractal shape for a mid-infrared application. We have simulated various formations of the nano-fractal Jerusalem cross based on a simple cross to show the effect of nano-aperture shape on electrical field enhancement in the near-field which is important in spectroscopy and optical imaging. In addition, we have used a single layer graphene over the aperture as a coat for making reconfigurable characteristic also creating a membrane for placement of nano-particle over the aperture. Implementation of the graphene is an amendment to the transfer of the nano-apertures. The biological materials with a thickness of 80 nm have been placed over the graphene layer and the Figures of Merits (FOM) have been obtained. Additionally, the prototype of nano-antenna is independent from incident wave polarization. The Finite Difference Time Domain (FDTD) calculations have been implemented in the simulation and modeling the nano-apertures. - Highlights: • Nano-apertures are developed at the metasurface design for circular polarization. • We have developed a novel Jerusalem cross fractal shape for a mid-infrared application. • Effect of nano-aperture shape on near-field enhancement is noticed which is important in spectroscopy and optical imaging. • Single layer graphene over the aperture as a coat for making reconfigurable characteristic.

Synthesis and structural characterization of coaxial nano tubes intercalated of molybdenum disulfide with carbon

International Nuclear Information System (INIS)

Reza San German, C.M.

2005-01-01

In this work the study of some fundamental aspects in the growth of unidimensional systems of coaxial nano tubes from the mold method is approached. This method is an inclusion technique of a precursor reagent into oxide nano porous alumina film (mold), and later applying some processes of synthesis it is gotten to obtain the wished material. The synthesized structures are identified later because they take place by means of the initial formation of nano tubes of MoS 2 , enclosing to carbon nano tubes by the same method, with propylene flow which generates a graphitization process that 'copy' the mold through as it flows. Binary phase MoS 2 + C nano tubes were synthesized by propylene pyrolysis inside MoS 2 nano tubes prepared by template assisted technique. The large coaxial nano tubes constituted of graphite sheets inserted between the MoS 2 layers forming the outer part, and coaxial multi wall carbon nano tubes (MWCNT) intercalated with MoS 2 inside. High resolution electron microscopy (HRTEM), electron energy loss spectroscopy (EELS), high angle annular dark field (HAADF), gatan image filter (GIF), nano beam electron diffraction patterns (NBEDP), along with molecular dynamics simulation and quantum mechanical calculations were used to characterize the samples. The one-dimensional structures exhibit diverse morphologies such as long straight and twisted nano tubes with several structural irregularities. The inter-planar spacing between MoS 2 layers was found to increase from 6.3 to 7.4 A due to intercalation with carbon. Simulated HREM images revealed the presence of these twisted nano structures, with mechanical stretch into intercalate carbon between MoS 2 layers. Our results open up the possibility of using MoS 2 nano tubes as templates for the synthesis of new one- dimensional binary phase systems. (Author)

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

Dependences of microstructure on electromagnetic interference shielding properties of nano-layered Ti3AlC2 ceramics.

Science.gov (United States)

Tan, Yongqiang; Luo, Heng; Zhou, Xiaosong; Peng, Shuming; Zhang, Haibin

2018-05-21

The microstructure dependent electromagnetic interference (EMI) shielding properties of nano-layered Ti 3 AlC 2 ceramics were presented in this study by comparing the shielding properties of various Ti 3 AlC 2 ceramics with distinct microstructures. Results indicate that Ti 3 AlC 2 ceramics with dense microstructure and coarse grains are more favourable for superior EMI shielding efficiency. High EMI shielding effectiveness over 40 dB at the whole Ku-band frequency range was achieved in Ti 3 AlC 2 ceramics by microstructure optimization, and the high shielding effectiveness were well maintained up to 600 °C. A further investigation reveals that only the absorption loss displays variations upon modifying microstructure by allowing more extensive multiple reflections in coarse layered grains. Moreover, the absorption loss of Ti 3 AlC 2 was found to be much higher than those of highly conductive TiC ceramics without layered structure. These results demonstrate that nano-layered MAX phase ceramics are promising candidates of high-temperature structural EMI shielding materials and provide insightful suggestions for achieving high EMI shielding efficiency in other ceramic-based shielding materials.

Formation and surface strengthening of nano-meter embedded phases during high energy Ti implanted and annealed steel

International Nuclear Information System (INIS)

Zhang Tonghe; Wu Yuguang; Cui Ping; Wang Ping

1999-12-01

Observation of transmission electron microscope indicated that the phase of FeTi 2 with 3.5-20 nm in diameter is embedded in high energy Ti implanted layer. It's average diameter is 8 nm. The nano-meter phases were embedded among dislocations and grain boundary in Ti implanted steel at 400 degree C. The wear resistance has been improved. The embedded structure can be changed obviously after annealing. The structure has been changed slightly after annealing at annealing temperature raging from 350 to 500 degree C, however, the hardness and wear resistance of implanted layer increased greatly. The maximum of hardness is obtained when the sample was annealed at 500 degree C for 20 min. It can be seen that the strengthening of implanted layer has enhanced by annealing indeed. The grain boundary and dislocations have disappeared; the diameter of nano-meter phases increased from 10 nm to 15 nm after annealing at temperature of 750 degree C and 1000 degree respectively. The average densities of nano-meter phases are 8.8 x 10 10 /cm 2 and 6.5 x 10 10 /cm 2 respectively for both of annealing temperature. The hardness decreased obviously when the annealing temperature is greater than 750 degree C

Minimum ignition energy of nano and micro Ti powder in the presence of inert nano TiO₂ powder.

Science.gov (United States)

Chunmiao, Yuan; Amyotte, Paul R; Hossain, Md Nur; Li, Chang

2014-06-15

The inerting effect of nano-sized TiO2 powder on ignition sensitivity of nano and micro Ti powders was investigated with a Mike 3 apparatus. "A little is not good enough" is also suitable for micro Ti powders mixed with nano-sized solid inertants. MIE of the mixtures did not significantly increase until the TiO2 percentage exceeded 50%. Nano-sized TiO2 powders were ineffective as an inertant when mixed with nano Ti powders, especially at higher dust loadings. Even with 90% nano TiO2 powder, mixtures still showed high ignition sensitivity because the statistic energy was as low as 2.1 mJ. Layer fires induced by ignited but unburned metal particles may occur for micro Ti powders mixed with nano TiO2 powders following a low level dust explosion. Such layer fires could lead to a violent dust explosion after a second dispersion. Thus, additional attention is needed to prevent metallic layer fires even where electric spark potential is low. In the case of nano Ti powder, no layer fires were observed because of less flammable material involved in the mixtures investigated, and faster flame propagation in nanoparticle clouds. Copyright © 2014 Elsevier B.V. All rights reserved.

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.; Korolev, S. A.; Okhapkin, A. I.; Khrykin, O. I.; Shashkin, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-11-15

A method for the in situ passivation of GaN-based structures with silicon nitride in the growth chamber of a metal organic vapor phase epitaxy (MOVPE) reactor is described. The structural and electrical properties of the obtained layers are investigated. The in situ and ex situ passivation of transistor structures with silicon nitride in an electron-beam-evaporation device are compared. It is shown that ex situ passivation changes neither the initial carrier concentration nor the mobility. In situ passivation makes it possible to protect the structure surface against uncontrollable degradation upon the finishing of growth and extraction to atmosphere. In the in situ passivated structure, the carrier concentration increases and the mobility decreases. This effect should be taken into account when manufacturing passivated GaN-based transistor structures.

Formation and vibrational structure of Si nano-clusters in ZnO matrix

Energy Technology Data Exchange (ETDEWEB)

Garcia-Serrano, J. [Universidad Autonoma del Estado de Hidalgo, Hidalgo (Mexico); Pal, U. [Universidad Autonoma de Puebla, Puebla (Mexico); Koshizaki, N.; Sasaki, T. [National Institute of Materials and Chemical Research, Ibaraki (Japan)

2001-02-01

We have studied the formation and vibrational structure of Si nano-clusters in ZnO matrix prepared by radio-frequency (r.f.) co-sputtering, and characterized by Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS) and Infrared (IR) spectroscopy techniques. The composite films of Si/ZnO were grown o quartz substrates by co-sputtering of Si and ZnO targets. TEM images show a homogeneous distribution of clusters in the matrix with average size varied from 3.7 nm to 34 nm depending on the temperature of annealing. IR absorption measurements revealed the bands correspond to the modes of vibrations of Si{sub 3} in its triangular geometrical structure. By analysing the IR absorption and XPS spectra we found that the nano-clusters consist of a Si{sub 3} core and a SiO{sub x} cap layer. With the increase of annealing temperature, the vibrational states of Si changed from the triplet {sup 3}B1(C2{sub v}) and {sup 3}A'{sub 2}(D{sub 3h}) states to its singlet ground state {sup 1}A{sub 1}(C2{sub v}) and the oxidation state of Si in SiO{sub x} increased. The evolution of the local atomic structure of the Si nano-clusters with the variation of Si content in the film and with the variation of the temperature of annealing are discussed. [Spanish] Se estudia la formacion y estructura vibracional de nano-cumulos de Si en matriz de ZnO preparados por la tecnica de radio-frecuencia (r.f.) co-sputtering, y caracterizados por Microscopia Electronica de Transmision (TEM), Espectroscopia Fotoelectronica de rayos X (XPS) y Espectroscopia de Infrarrojo (IR). Las peliculas compositas de Si/ZnO fueron crecidas sobre sustratos de cuarzo mediante el co-sputtering de blancos de Si y ZnO. Las imagenes de TEM mostraron una distribucion homogenea de cumulos en la matriz con un tamano promedio de 3.7 nm a 34 nm dependiendo de la temperatura de tratamiento. Las mediciones de IR relevaron las bandas correspondientes a los modos de vibracion de Si{sub 3} en su estructura

Passivation process of X80 pipeline steel in bicarbonate solutions

Science.gov (United States)

Zhou, Jian-Long; Li, Xiao-Gang; Du, Cui-Wei; Pan, Ying; Li, Tao; Liu, Qian

2011-04-01

The passivation process of X80 pipeline steel in bicarbonate solutions was investigated using potentiodynamic, dynamic electrochemical impedance spectroscopy (DEIS), and Mott-Schottky measurements. The results show that the shape of polarization curves changes with HCO{3/-} concentration. The critical `passive' concentration is 0.009 mol/L HCO{3/-} for X80 pipeline steel in bicarbonate solutions. No anodic current peak exists in HCO3/- solutions when the concentration is lower than 0.009 mol/L, whereas there are one and two anodic current peaks when the HCO3/- concentration ranges from 0.009 to 0.05 mol/L and is higher than 0.1 mol/L, respectively. DEIS measurements show that there exist active dissolution range, transition range, pre-passive range, passive layer formation range, passive range, and trans-passive range for X80 pipeline steel in the 0.1 mol/L HCO{3/-} solutions. The results of DEIS measurements are in complete agreement with the potentiodynamic diagram. An equivalent circuit containing three sub-layers is used to explain the Nyquist plots in the passive range. Analyses are well made for explaining the corresponding fitted capacitance and impedance. The Mott-Schottky plots show that the passive film of X80 pipeline steel is an n-type semiconductor, and capacitance measurements are in good accordance with the results of DEIS experiment.

Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell

International Nuclear Information System (INIS)

Cho, Young Joon; Song, Hee Eun; Chang, Hyo Sik

2015-01-01

Highlights: • We investigated the relation of potassium contamination on Si solar wafer to lifetime. • We deposited Al 2 O 3 layer by atomic layer deposition (ALD) on Si solar wafer after several cleaning process. • Potassium can be left on Si surface by incomplete cleaning process and degrade the Al 2 O 3 passivation quality. - Abstract: We investigated the relation of potassium contamination on a crystalline silicon (c-Si) surface after potassium hydroxide (KOH) etching to the lifetime of the c-Si solar cell. Alkaline solution was employed for saw damage removal (SDR), texturing, and planarization of a textured c-Si solar wafer prior to atomic layer deposition (ALD) Al 2 O 3 growth. In the solar-cell manufacturing process, ALD Al 2 O 3 passivation is utilized to obtain higher conversion efficiency. ALD Al 2 O 3 shows excellent surface passivation, though minority carrier lifetime varies with cleaning conditions. In the present study, we investigated the relation of potassium contamination to lifetime in solar-cell processing. The results showed that the potassium-contaminated samples, due to incomplete cleaning of KOH, had a short lifetime, thus establishing that residual potassium can degrade Al 2 O 3 surface passivation

Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

Energy Technology Data Exchange (ETDEWEB)

Guzman, L., E-mail: luisg47@gmail.com [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy); Vettoruzzo, F. [Ronda High Tech, via Vegri 83, 36010 Zane’, Vicenza (Italy); Laidani, N. [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy)

2016-02-29

By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al{sub 2}O{sub 3}, TiO{sub 2}) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al{sub 2}O{sub 3}, TiO{sub 2}, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and

Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

International Nuclear Information System (INIS)

Guzman, L.; Vettoruzzo, F.; Laidani, N.

2016-01-01

By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al_2O_3, TiO_2) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al_2O_3, TiO_2, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and optically tested. • An

Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

NARCIS (Netherlands)

Garcia-Alonso Garcia, D.; Smit, S.; Bordihn, S.; Kessels, W.M.M.

2013-01-01

The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max <4 cm s-1) on n- and p-type

Ion implantation induced conducting nano-cluster formation in PPO

International Nuclear Information System (INIS)

Das, A.; Patnaik, A.; Ghosh, G.; Dhara, S.

1997-01-01

Conversion of polymers and non-polymeric organic molecules from insulating to semiconducting materials as an effect of energetic ion implantation is an established fact. Formation of nano-clusters enriched with carbonaceous materials are made responsible for the insulator-semiconductor transition. Conduction in these implanted materials is observed to follow variable range hopping (VRH) mechanism. Poly(2,6-dimethyl phenylene oxide) [PPO] compatible in various proportion with polystyrene is used as a high thermal resistant insulating polymer. PPO has been used for the first time in the ion implantation study

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Flexible single-layer ionic organic-inorganic frameworks towards precise nano-size separation

Science.gov (United States)

Yue, Liang; Wang, Shan; Zhou, Ding; Zhang, Hao; Li, Bao; Wu, Lixin

2016-02-01

Consecutive two-dimensional frameworks comprised of molecular or cluster building blocks in large area represent ideal candidates for membranes sieving molecules and nano-objects, but challenges still remain in methodology and practical preparation. Here we exploit a new strategy to build soft single-layer ionic organic-inorganic frameworks via electrostatic interaction without preferential binding direction in water. Upon consideration of steric effect and additional interaction, polyanionic clusters as connection nodes and cationic pseudorotaxanes acting as bridging monomers connect with each other to form a single-layer ionic self-assembled framework with 1.4 nm layer thickness. Such soft supramolecular polymer frameworks possess uniform and adjustable ortho-tetragonal nanoporous structure in pore size of 3.4-4.1 nm and exhibit greatly convenient solution processability. The stable membranes maintaining uniform porous structure demonstrate precisely size-selective separation of semiconductor quantum dots within 0.1 nm of accuracy and may hold promise for practical applications in selective transport, molecular separation and dialysis systems.

Development of "all natural" layer-by-layer redispersible solid lipid nanoparticles by nano spray drying technology.

Science.gov (United States)

Wang, Taoran; Hu, Qiaobin; Zhou, Mingyong; Xia, Yan; Nieh, Mu-Ping; Luo, Yangchao

2016-10-01

Solid lipid nanoparticles (SLNs) have gained tremendous attraction as carriers for controlled drug delivery. Despite numerous advances in the field, one long-standing historical challenge for their practical applications remains unmet: redispersibility after drying. In this work, a novel design of SLNs using a layer-by-layer (LbL) technique was developed and the formulations were optimized by surface response methodology (Box-Behnken design). To the best of our knowledge, this is the first study reporting the fabrication of SLNs from all natural ingredients in the absence of any synthetic surfactants or coatings. The SLNs were prepared by a combined solvent-diffusion and hot homogenization method, with soy lecithin as natural emulsifier (first layer), followed by the subsequent coating with sodium caseinate (second layer) and pectin (third layer), both of which are natural food biopolymers. The adsorption of pectin coating onto caseinate was reinforced by hydrophobic and electrostatic interactions induced by a pH-driven process along with thermal treatment. The innovative nano spray drying technology was further explored to obtain ultra-fine powders of SLNs. Compared to uncoated or single-layer coated SLNs powders, which showed severe aggregation after spray drying, the well-separated particles with spherical shape and smooth surface were obtained for layer-by-layer (LbL) SLNs, which were redispersible into water without variation of dimension, shape and morphology. The SLNs were characterized by Fourier transform infrared and high-performance differential scanning calorimetry for their physical properties. The LbL-coated SLNs based on all natural ingredients have promising features for future applications as drug delivery systems, overcoming the major obstacles in conventional spray drying and redispersing SLNs-based formulations. Copyright © 2016 Elsevier B.V. All rights reserved.

Effects of TiO{sub 2} buffer layer on the photoelectrochemical properties of TiO{sub 2} Nano rods grown by modified chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Lee, Tae-hyun; Ha, Jin-wook; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

2015-08-15

In this study, we grew TiO{sub 2} nano rods on TiO{sub 2}-film buffered FTO substrate using modified chemical bath deposition (M-CBD). The TiO{sub 2} buffer layer was grown by spin coating method with different RPM (revolutions per minute) values and deposition cycles. We investigated the effects of the RPM values and the deposition cycles on the morphological, structural and photoelectrochemical properties of TiO{sub 2} nano rods. In this work, we have also found that the morphological and structural properties of TiO{sub 2} nano rods affected the photoelectrochemical properties of TiO{sub 2} nano rods. And the maximum photocurrent density of 0.34 mA/cm{sup 2} at 0.6V (vs.SCE) was obtained from the buffer layer deposition process condition of 4,000 RPM and two-times buffer layer depositions.

ALD TiO x as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs

Science.gov (United States)

Pavlidis, S.; Bayraktaroglu, B.; Leedy, K.; Henderson, W.; Vogel, E.; Brand, O.

2017-11-01

The suitability of atomic layer deposited (ALD) titanium oxide (TiO x ) as a top gate dielectric and passivation layer for indium gallium zinc oxide (InGaZnO115) ion sensitive field effect transistors (ISFETs) is investigated. TiO x is an attractive barrier material, but reports of its use for InGaZnO thin film transistor (TFT) passivation have been conflicting thus far. In this work, it is found that the passivated TFT’s behavior depends on the TiO x deposition temperature, affecting critical device characteristics such as threshold voltage, field-effect mobility and sub-threshold swing. An O2 annealing step is required to recover TFT performance post passivation. It is also observed that the positive bias stress response of the passivated TFTs improves compared the original bare device. Secondary ion mass spectroscopy excludes the effects of hydrogen doping and inter-diffusion as sources of the temperature-dependent performance change, therefore indicating that oxygen gettering induced by TiO x passivation is the likely source of oxygen vacancies and, consequently, carriers in the InGaZnO film. It is also shown that potentiometric sensing using ALD TiO x exhibits a near Nernstian response to pH change, as well as minimizes V TH drift in TiO x passivated InGaZnO TFTs immersed in an acidic liquid. These results add to the understanding of InGaZnO passivation effects and underscore the potential for low-temperature fabricated InGaZnO ISFETs to be used as high-performance mobile chemical sensors.

Large-eddy simulation of passive shock-wave/boundary-layer interaction control

International Nuclear Information System (INIS)

Pasquariello, Vito; Grilli, Muzio; Hickel, Stefan; Adams, Nikolaus A.

2014-01-01

Highlights: • The present study investigates a passive flow-control technique for shock-wave/boundary-layer interaction. • The control configuration consists of local suction and injection through a pressure feedback duct. • Implicit LES have been conducted for three different suction locations. • Suction reduces the size of the separation zone. • Turbulence amplification and reflected shock dynamics can be significantly reduced. - Abstract: We investigate a passive flow-control technique for the interaction of an oblique shock generated by an 8.8° wedge with a turbulent boundary-layer at a free-stream Mach number of Ma ∞ =2.3 and a Reynolds number based on the incoming boundary-layer thickness of Re δ 0 =60.5×10 3 by means of large-eddy simulation (LES). The compressible Navier–Stokes equations in conservative form are solved using the adaptive local deconvolution method (ALDM) for physically consistent subgrid scale modeling. Emphasis is placed on the correct description of turbulent inflow boundary conditions, which do not artificially force low-frequency periodic motion of the reflected shock. The control configuration combines suction inside the separation zone and blowing upstream of the interaction region by a pressure feedback through a duct embedded in the wall. We vary the suction location within the recirculation zone while the injection position is kept constant. Suction reduces the size of the separation zone with strongest effect when applied in the rear part of the separation bubble. The analysis of wall-pressure spectra reveals that all control configurations shift the high-energy low-frequency range to higher frequencies, while the energy level is significantly reduced only if suction acts in the rear part of the separated zone. In that case also turbulence production within the interaction region is significantly reduced as a consequence of mitigated reflected shock dynamics and near-wall flow acceleration

Analysis of a metal filling and liner formation mechanism of the blind via with nano-Ag particles for TSV (through silicon via) interconnection

International Nuclear Information System (INIS)

Ham, Y-H; Kim, D-P; Baek, K-H; Park, K-S; Do, L-M; Kwon, K-H

2012-01-01

We investigated a metal filling and liner formation mechanism with a nano-Ag particle for the blind Si via, which is used in the via first process of through silicon via (TSV) interconnection. Using the deep reactive ion etching process, we produced the blind Si via (which is called the blind via hole or via) with a nearly vertical profile. The diameter and depth of the blind Si via were about 10 and 71 µm, respectively. The blind via holes were filled with a nano-Ag particle solution to form a metal plug or a metal liner. At this time, the Ag filling properties were monitored as a function of the volatilization rate of the Ag particle solution in the evacuating chamber. In the fast volatilization of the nano-Ag particle solution, an Ag liner formed on the inner wall of via holes. Meanwhile, both an Ag liner at the sidewall and the Ag plug at the bottom were obtained by the slow volatilization process. Finally, blind via holes fully filled with nano-Ag particles were obtained using four repetitions of the slow volatilization filling process. The proposed TSV filling process can fill large-diameter via holes over 100 µm without a seed layer and chemical mechanical planarization for TSV interconnection at low temperature. This is a simple and cost-effective TSV filling process. (paper)

Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

2016-03-15

Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

Nano-aggregates: emerging delivery tools for tumor therapy.

Science.gov (United States)

Sharma, Vinod Kumar; Jain, Ankit; Soni, Vandana

2013-01-01

A plethora of formulation techniques have been reported in the literature for site-specific targeting of water-soluble and -insoluble anticancer drugs. Along with other vesicular and particulate carrier systems, nano-aggregates have recently emerged as a novel supramolecular colloidal carrier with promise for using poorly water-soluble drugs in molecular targeted therapies. Nano-aggregates possess some inherent properties such as size in the nanometers, high loading efficiency, and in vivo stability. Nano-aggregates can provide site-specific drug delivery via either a passive or active targeting mechanism. Nano-aggregates are formed from a polymer-drug conjugated amphiphilic block copolymer. They are suitable for encapsulation of poorly water-soluble drugs by covalent conjugation as well as physical encapsulation. Because of physical encapsulation, a maximum amount of drug can be loaded in nano-aggregates, which helps to achieve a sufficiently high drug concentration at the target site. Active transport can be achieved by conjugating a drug with vectors or ligands that bind specifically to receptors being overexpressed in the tumor cells. In this review, we explore synthesis and tumor targeting potential of nano-aggregates with active and passive mechanisms, and we discuss various characterization parameters, ex vivo studies, biodistribution studies, clinical trials, and patents.

From Nano Structure to Systems: Fabrication and Characterization

International Nuclear Information System (INIS)

Uda Hashim

2011-01-01

NPD is designed in various nano wires scale size from 100 nm down to 20 nm. Next, the nano fabrication process flow development which consists of the detailed parameters and recipes are developed for nano wires formation. In order to produce very small nano wires, the dimensions, developments, etch profiles of nano wires and size reduction by thermal oxidation was investigated. Finally, the combination on top-down nano fabrication method and size-reduction has resulted in successful reduction of Nano wires reduced from 100 nm to approximately 20 nm. Spacer Patterning Lithography (SPL) is another technique used to fabricate nano structure especially nano wire. It is a low-cost and compatible to standard CMOS fabrication process. SPL, in general is a combination of conventional photolithography, anisotropic etchings and the excellent homogeneity and reproducibility of conformal chemical vapor deposition processes. The detail process flow involving every step in SPL including the deposition of a sacrificial layer, the definition of vertical step by means of lithography and etch-back process, the deposition of a conformal layer, final anisotropic etching and formation of gold pad. A wire with the scale in nano size has a wide range of applications. Up to present, the nano wires have been implemented in electronics, optics, mechanics, and sensing technology etc. One of the fields where nano wires have been used as building blocks is biosensor. Biosensor has been developed for different applications such as health care, industrial process control, environmental monitoring, quality control of food applications etc. Nevertheless, the conventional biosensor has its disadvantages, which are expensive, time-consuming, and require highly trained personnel. Therefore, there is increasing interest in the development of new type of biosensor which has the advantages of label-free, ultrasensitive, and near real-time operation. (author)

Self-cleaning poly(dimethylsiloxane) film with functional micro/nano hierarchical structures.

Science.gov (United States)

Zhang, Xiao-Sheng; Zhu, Fu-Yun; Han, Meng-Di; Sun, Xu-Ming; Peng, Xu-Hua; Zhang, Hai-Xia

2013-08-27

This paper reports a novel single-step wafer-level fabrication of superhydrophobic micro/nano dual-scale (MNDS) poly(dimethylsiloxane) (PDMS) films. The MNDS PDMS films were replicated directly from an ultralow-surface-energy silicon substrate at high temperature without any surfactant coating, achieving high precision. An improved deep reactive ion etching (DRIE) process with enhanced passivation steps was proposed to easily realize the ultralow-surface-energy MNDS silicon substrate and also utilized as a post-treatment process to strengthen the hydrophobicity of the MNDS PDMS film. The chemical modification of this enhanced passivation step to the surface energy has been studied by density functional theory, which is also the first investigation of C4F8 plasma treatment at molecular level by using first-principle calculations. From the results of a systematic study on the effect of key process parameters (i.e., baking temperature and time) on PDMS replication, insight into the interaction of hierarchical multiscale structures of polymeric materials during the micro/nano integrated fabrication process is experimentally obtained for the first time. Finite element simulation has been employed to illustrate this new phenomenon. Additionally, hierarchical PDMS pyramid arrays and V-shaped grooves have been developed and are intended for applications as functional structures for a light-absorption coating layer and directional transport of liquid droplets, respectively. This stable, self-cleaning PDMS film with functional micro/nano hierarchical structures, which is fabricated through a wafer-level single-step fabrication process using a reusable silicon mold, shows attractive potential for future applications in micro/nanodevices, especially in micro/nanofluidics.

Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

International Nuclear Information System (INIS)

Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

2013-01-01

Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Nano-silver in drinking water and drinking water sources: stability and influences on disinfection by-product formation.

Science.gov (United States)

Tugulea, A-M; Bérubé, D; Giddings, M; Lemieux, F; Hnatiw, J; Priem, J; Avramescu, M-L

2014-10-01

untreated Ottawa River water, with a dissolved organic carbon concentration of 6 mg/L, was significantly higher than the stability of the nano-silver dispersions in distilled, organic-free water. Nano-silver particles suspended in the groundwater agglomerated and were quickly and quantitatively removed from the solution. Our data confirm previous observations that natural dissolved organic matter stabilizes nano-silver particles, while the high-ionic strength of groundwater appears to favor their agglomeration and precipitation. As expected, nano-silver was not stable in Ottawa River water through the chlorination process, but survived for many days when added to the Ottawa River water after treatment with chlorine or chloramines. Stirring appeared to have minimal effect on nano-silver stability in untreated and treated Ottawa River water. The profile of DBPs formed in the presence of nAg differed significantly from the profile of DBPs formed in the absence of nAg only at the 1 mg/L nAg concentration. The differences observed consisted mainly in reduced formation of some brominated DBPs and a small increase in the formation of cyanogen chloride. The reduced formation of brominated congeners may be explained by the decrease in available bromide due to the presence of Ag(+) ions. It should be noted that a concentration of 1 mg/L is significantly higher than nAg concentrations that would be expected to be present in surface waters, but these results could be significant for the disinfection of some wastewaters with comparably high nano-silver concentrations.

Fire performance, microstructure and thermal degradation of an epoxy based nano intumescent fire retardant coating for structural applications

Energy Technology Data Exchange (ETDEWEB)

Aziz, Hammad, E-mail: engr.hammad.aziz03@gmail.com; Ahmad, Faiz, E-mail: faizahmad@petronas.com.my; Yusoff, P. S. M. Megat; Zia-ul-Mustafa, M. [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, Tronoh 31750, Perak (Malaysia)

2015-07-22

Intumescent fire retardant coating (IFRC) is a passive fire protection system which swells upon heating to form expanded multi-cellular char layer that protects the substrate from fire. In this research work, IFRC’s were developed using different flame retardants such as ammonium polyphosphate, expandable graphite, melamine and boric acid. These flame retardants were bound together with the help of epoxy binder and cured together using curing agent. IFRC was then reinforced with nano magnesium oxide and nano alumina as inorganic fillers to study their effect towards fire performance, microstructure and thermal degradation. Small scale fire test was conducted to investigate the thermal insulation of coating whereas fire performance was calculated using thermal margin value. Field emission scanning electron microscopy was used to examine the microstructure of char obtained after fire test. Thermogravimetric analysis was conducted to investigate the residual weight of coating. Results showed that the performance of the coating was enhanced by reinforcement with nano size fillers as compared to non-filler based coating. Comparing both nano size magnesium oxide and nano size alumina; nano size alumina gave better fire performance with improved microstructure of char and high residual weight.

Mesoderm layer formation in Xenopus and Drosophila gastrulation

International Nuclear Information System (INIS)

Winklbauer, Rudolf; Müller, H-Arno J

2011-01-01

During gastrulation, the mesoderm spreads out between ectoderm and endoderm to form a mesenchymal cell layer. Surprisingly the underlying principles of mesoderm layer formation are very similar in evolutionarily distant species like the fruit fly, Drosophila melanogaster, and the frog, Xenopus laevis, in which the molecular and the cellular basis of mesoderm layer formation have been extensively studied. Complementary expression of growth factors in the ectoderm and their receptors in the mesoderm act to orient cellular protrusive activities and direct cell movement, leading to radial cell intercalation and the spreading of the mesoderm layer. This mechanism is contrasted with generic physical mechanisms of tissue spreading that consider the adhesive and physical properties of the cells and tissues. Both mechanisms need to be integrated to orchestrate mesenchymal morphogenesis

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Passive RF component technology materials, techniques, and applications

CERN Document Server

Wang, Guoan

2012-01-01

Focusing on novel materials and techniques, this pioneering volume provides you with a solid understanding of the design and fabrication of smart RF passive components. You find comprehensive details on LCP, metal materials, ferrite materials, nano materials, high aspect ratio enabled materials, green materials for RFID, and silicon micromachining techniques. Moreover, this practical book offers expert guidance on how to apply these materials and techniques to design a wide range of cutting-edge RF passive components, from MEMS switch based tunable passives and 3D passives, to metamaterial-bas

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes

International Nuclear Information System (INIS)

Zhou Jian-Lin; Yu Jun-Sheng; Yu Xin-Ge; Cai Xin-Yang

2012-01-01

C 60 field-effect transistor (OFET) with a mobility as high as 5.17 cm 2 /V·s is fabricated. In our experiment, an ultrathin pentacene passivation layer on poly-(methyl methacrylate) (PMMA) insulator and a bathophenanthroline (Bphen)/Ag bilayer electrode are prepared. The OFET shows a significant enhancement of electron mobility compared with the corresponding device with a single PMMA insultor and an Ag electrode. By analysing the C 60 film with atomic force microscopy and X-ray diffraction techniques, it is shown that the pentacene passivation layer can contribute to C 60 film growth with the large grain size and significantly improve crystallinity. Moreover, the Bphen buffer layer can reduce the electron contact barrier from Ag electrodes to C 60 film efficiently. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Accelerated effects of nano-ZnO on phosphorus removal by Chlorella vulgaris: Formation of zinc phosphate crystallites.

Science.gov (United States)

Xiao, Huaixian; Liu, Na; Tian, Ke; Liu, Shixiang; Ge, Fei

2018-09-01

Nanoparticles have been reported to induce toxicity to aquatic organisms, however, their potential impacts on phosphorus removal from wastewater by algae are unclear. In this study, the effects of nanoparticle ZnO (nano-ZnO) on phosphate (PO 4 3- ) removal by a green alga Chlorella vulgaris were investigated. We found that PO 4 3- removal efficiency was accelerated with high concentrations of nano-ZnO (0.04-0.15mM) but reduced with low concentrations of nano-ZnO (0.005-0.04mM) compared to the control (without nano-ZnO), suggesting that PO 4 3- removal efficiency by C. vulgaris was related to nano-ZnO concentrations. Moreover, we observed changes of nano-ZnO morphology and detected element P on the surface of nano-ZnO by using transmission electronic microscopy (TEM) combined with energy dispersive X-ray spectroscopy (EDX), indicating that PO 4 3- was interacted with nano-ZnO or the dissolved Zn 2+ from nano-ZnO. Furthermore, we confirmed this interaction induced the formation of Zn 3 (PO 4 ) 2 crystallites sedimentation by employing X-ray diffraction analysis (XRD) and X-ray photoelectron spectroscopy (XPS), which finally accelerates the removal of PO 4 3- . Copyright © 2018 Elsevier B.V. All rights reserved.

Synthesis, fabrication, and spectroscopy of nano-scale photonic noble metal materials

Science.gov (United States)

Egusa, Shunji

Nanometer is an interesting scale for physicists, chemists, and materials scientists, in a sense that it lies between the macroscopic and the atomic scales. In this regime, materials exhibit distinct physical and chemical properties that are clearly different from those of atoms or macroscopic bulk. This thesis is concerned about both physics and chemistry of noble metal nano-structures. Novel chemical syntheses and physical fabrications of various noble metal nano-structures, and the development of spectroscopic techniques for nano-structures are presented. Scanning microscopy/spectroscopy techniques inherently perturbs the true optical responses of the nano-structures. However, by using scanning tunneling microscope (STM) tip as the nanometer-confined excitation source of surface plasmons in the samples, and subsequently collecting the signals in the Fourier space, it is shown that the tip-perturbed part of the signals can be deconvoluted. As a result, the collected signal in this approach is the pure response of the sample. Coherent light is employed to study the optical response of nano-structures, in order to avoid complication from tip-perturbation as discussed above. White-light super-continuum excites the nano-structure, the monolayer of Au nanoparticles self-assembled on silicon nitride membrane substrates. The coherent excitation reveals asymmetric surface plasmon resonance in the nano-structures. One of the most important issues in nano-scale science is to gain control over the shape, size, and assembly of nanoparticles. A novel method is developed to chemically synthesize ligand-passivated atomic noble metal clusters in solution phase. The method, named thermal decomposition method, enables facile yet robust synthesis of fluorescent atomic clusters. Thus synthesized atomic clusters are very stable, and show behaviors of quantum dots. A novel and versatile approach for creation of nanoparticle arrays is developed. This method is different from the

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

Science.gov (United States)

Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

2016-09-01

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

Direct evidence of void passivation in Cu(InGa)(SSe)2 absorber layers

International Nuclear Information System (INIS)

Lee, Dongho; Kim, Young-Su; Mo, Chan B.; Huh, Kwangsoo; Yang, JungYup; Nam, Junggyu; Baek, Dohyun; Park, Sungchan; Kim, ByoungJune; Kim, Dongseop; Lee, Jaehan; Heo, Sung; Park, Jong-Bong; Kang, Yoonmook

2015-01-01

We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer

A new structure for comparing surface passivation materials of GaAs solar cells

Science.gov (United States)

Desalvo, Gregory C.; Barnett, Allen M.

1989-01-01

The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

NARCIS (Netherlands)

Terlinden, N.M.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

2010-01-01

Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ~ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical

Protective layer formation on magnesium in cell culture medium

Energy Technology Data Exchange (ETDEWEB)

Wagener, V.; Virtanen, S., E-mail: virtanen@ww.uni-erlangen.de

2016-06-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO{sub 2}). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37 °C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous

Protective layer formation on magnesium in cell culture medium

International Nuclear Information System (INIS)

Wagener, V.; Virtanen, S.

2016-01-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO_2). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37 °C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous structures. The

Vortex Formation During Unsteady Boundary-Layer Separation

Science.gov (United States)

Das, Debopam; Arakeri, Jaywant H.

1998-11-01

Unsteady laminar boundary-layer separation is invariably accompanied by the formation of vortices. The aim of the present work is to study the vortex formation mechanism(s). An adverse pressure gradient causing a separation can be decomposed into a spatial component ( spatial variation of the velocity external to the boundary layer ) and a temporal component ( temporal variation of the external velocity ). Experiments were conducted in a piston driven 2-D water channel, where the spatial component could be be contolled by geometry and the temporal component by the piston motion. We present results for three divergent channel geometries. The piston motion consists of three phases: constant acceleration from start, contant velocity, and constant deceleration to stop. Depending on the geometry and piston motion we observe different types of unsteady separation and vortex formation.

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

Science.gov (United States)

Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

2018-05-01

Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

Spontaneous passivation observations during scale formation on mild steel in CO{sub 2} brines

Energy Technology Data Exchange (ETDEWEB)

Han Jiabin, E-mail: jhan@lanl.gov [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Nesic, Srdjan, E-mail: nesic@ohio.edu [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States); Yang Yang; Brown, Bruce N. [Institute for Corrosion and Multiphase Technology, Department of Chemical and Biomolecular Engineering, Ohio University, 342 West State Street, Athens, OH 45701 (United States)

2011-06-01

the structure of the passive layer. An extra phase, most likely magnetite, was observed to be beneath the iron carbonate scale and at the crystal grain boundaries which passivated the mild steel.

Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

International Nuclear Information System (INIS)

Hallam, Brett; Abbott, Malcolm; Nampalli, Nitin; Hamer, Phill; Wenham, Stuart

2016-01-01

A three-state model is used to explore the influence of defect formation- and passivation rates of carrier-induced degradation related to boron-oxygen complexes in boron-doped p-type silicon solar cells within a hydrogen-based model. The model highlights that the inability to effectively mitigate carrier-induced degradation at elevated temperatures in previous studies is due to the limited availability of defects for hydrogen passivation, rather than being limited by the defect passivation rate. An acceleration of the defect formation rate is also observed to increase both the effectiveness and speed of carrier-induced degradation mitigation, whereas increases in the passivation rate do not lead to a substantial acceleration of the hydrogen passivation process. For high-throughput mitigation of such carrier-induced degradation on finished solar cell devices, two key factors were found to be required, high-injection conditions (such as by using high intensity illumination) to enable an acceleration of defect formation whilst simultaneously enabling a rapid passivation of the formed defects, and a high temperature to accelerate both defect formation and defect passivation whilst still ensuring an effective mitigation of carrier-induced degradation

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Directory of Open Access Journals (Sweden)

Takeshi Aoki

2015-08-01

Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Structural transformation of implanted diamond layers during high temperature annealing

International Nuclear Information System (INIS)

Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

2015-01-01

In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

Subsurface defects structural evolution in nano-cutting of single crystal copper

International Nuclear Information System (INIS)

Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Sun, Yazhou; Guo, Yongbo; Liang, Yingchun

2015-01-01

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated

Subsurface defects structural evolution in nano-cutting of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Yazhou [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liang, Yingchun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-07-30

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated.

Electrodeposition of ZnO nano-wires lattices with a controlled morphology; Electrodepot de reseaux de nanofils de ZnO a morphologie controlee

Energy Technology Data Exchange (ETDEWEB)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, UPR 209, 94 - Thiais (France)

2006-07-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO{sub 2}. Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

Directory of Open Access Journals (Sweden)

M. Hofmann

2008-01-01

Full Text Available A novel plasma-enhanced chemical vapour deposited (PECVD stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing and below 30 cm/s (after forming gas anneal were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Science.gov (United States)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

International Nuclear Information System (INIS)

Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

2013-01-01

We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

Science.gov (United States)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Alternative to Nitric Acid Passivation Project Overview

Science.gov (United States)

Lewis, Pattie L.

2013-01-01

The standard practice for protection of stainless steel is a process called passivation. This procedure results in the formation of a metal oxide layer to prevent corrosion. Typical passivation procedures call for the use of nitric acid which exhibits excellent corrosion performance; however, there are a number of environmental, worker safety, and operational issues associated with its use. The longtime military specification for the passivation of stainless steel was cancelled in favor of newer specifications which allow for the use of citric acid in place of nitric acid. Citric acid offers a variety of benefits that include increased safety for personnel, reduced environmental impact, and reduced operational costs. There have been few studies, however, to determine whether citric acid is an acceptable alternative for NASA and DoD. This paper details activities to date including development of the joint test plan, on-going and planned testing, and preliminary results.

Protective layer formation on magnesium in cell culture medium.

Science.gov (United States)

Wagener, V; Virtanen, S

2016-06-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO2). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37°C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous structures. The

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

Science.gov (United States)

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Toward an understanding of surface layer formation, growth, and transformation at the glass-fluid interface

Science.gov (United States)

Hopf, J.; Eskelsen, J. R.; Chiu, M.; Ievlev, A. V.; Ovchinnikova, O. S.; Leonard, D.; Pierce, E. M.

2018-05-01

that the altered layer is mainly composed of Al, H, Si, and O with the clay layer being enriched in Li, Zn, Fe, and Mg. The amorphous hydrated layer is enriched in Ca, H, and Zr with a minor amount of K. Furthermore, ToF-SIMS results also suggest the B profile is anti-correlated with the H profile in the hydrated layer. Our selected-area electron diffraction results suggest the structure of the hydrated layer closely resembles opal-AG (amorphous gel-like) with an average crystallite size of ∼0.7 nm which is smaller than the critical nucleus for silica nanoparticles (i.e., 1.4-3 nm). These results suggest the hydrated layer is more consistent with a polymeric gel rather than a colloidal gel and is comprised of molecular units (<1 nm in size) that result from the difficult to hydrolyze bonds, such as Sisbnd Osbnd Zr units, during the glass corrosion process. The size of individual particles or molecular units is a function of formation conditions (e.g., pH, ionic strength, nano-confinement, solute composition) in the hydrated layer.

Investigations on the passivity of iron in borate and phosphate buffers, pH 8.4

International Nuclear Information System (INIS)

Sieber, I.V.; Hildebrand, H.; Virtanen, S.; Schmuki, P.

2006-01-01

In the present work surface analytical experiments (XPS and AES) on the passive film on iron formed in borate and phosphate buffers (pH 8.4) have been carried out. In the passive film formed in phosphate buffer a significant amount of phosphates is found in the outer part of the film. Boron species are not significantly incorporated in the passive film formed in borate buffer. The mechanism of the reduction of the passive film depends strongly on the electrolyte composition. In borate buffer, cathodic polarization leads to reductive dissolution of the passive film whereas in phosphate buffer the passive film is converted into metallic iron without dissolution but via laterally inhomogeneously formation of an intermediate Fe(II) phosphate layer

Preparation and characterization of CBN ternary compounds with nano-structure

International Nuclear Information System (INIS)

Xiong, Y.H.; Yang, S.; Xiong, C.S.; Pi, H.L.; Zhang, J.; Ren, Z.M.; Mai, Y.T.; Xu, W.; Dai, G.H.; Song, S.J.; Xiong, J.; Zhang, L.; Xia, Z.C.; Yuan, S.L.

2006-01-01

CBN ternary compounds with nano-structure have been prepared directly by a mechanical alloying technique at room temperature. The characteristic and formation mechanism of CBN are discussed. The nano-sheets and nano-layered rods of CBN are observed according to the morphology of scanning electron microscopy. It is substantiated that the microstructure of CBN was closely related to the ball milling time and the ball milling condition according to the results of X-ray diffraction of CBN with different ball milling time. After ball milling for 60 and 90 h, some new diffraction peaks are observed, which implies that some unknown microstructure and phase separation are induced in the reactive ball milling of CBN. The results of XRD are in accordance with that of X-ray photoelectron spectroscopy of CBN before ball milling and after ball milling for 90 h

Hydrogenation of passivated contacts

Energy Technology Data Exchange (ETDEWEB)

Nemeth, William; Yuan, Hao-Chih; LaSalvia, Vincenzo; Stradins, Pauls; Page, Matthew R.

2018-03-06

Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Improved Light Conversion Efficiency Of Dye-Sensitized Solar Cell By Dispersing Submicron-Sized Granules Into The Nano-Sized TiO2 Layer

Directory of Open Access Journals (Sweden)

Song S.A.

2015-06-01

Full Text Available In this work, TiO2 nanoparticles and submicron-sized granules were synthesized by a hydrothermal method and spray pyrolysis, respectively. Submicron-sized granules were dispersed into the nano-sized TiO2 layer to improve the light conversion efficiency. Granules showed better light scattering, but lower in terms of the dye-loading quantity and recombination resistance compared with nanoparticles. Consequently, the nano-sized TiO2 layer had higher cell efficiency than the granulized TiO2 layer. When dispersed granules into the nanoparticle layer, the light scattering was enhanced without the loss of dye-loading quantities. The dispersion of granulized TiO2 led to increase the cell efficiency up to 6.51%, which was about 5.2 % higher than that of the electrode consisting of only TiO2 nanoparticles. Finally, the optimal hydrothermal temperature and dispersing quantity of granules were found to be 200°C and 20 wt%, respectively.

The fabrication of a carbon nanotube array using a catalyst-poisoning layer in the inverse nano-sphere lithography method

International Nuclear Information System (INIS)

Tsai, Tsung-Yen; Chen, Tsung-Han; Tai, Nyan-Hwa; Chang, Shih-Chin; Hsu, Hui-Chen; Joseph Palathinkal, Thomas

2009-01-01

A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.

The fabrication of a carbon nanotube array using a catalyst-poisoning layer in the inverse nano-sphere lithography method

Energy Technology Data Exchange (ETDEWEB)

Tsai, Tsung-Yen; Chen, Tsung-Han; Tai, Nyan-Hwa; Chang, Shih-Chin; Hsu, Hui-Chen; Joseph Palathinkal, Thomas, E-mail: nhtai@mx.nthu.edu.t [Department of Materials Science and Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan (China)

2009-07-29

A new method for the fabrication of periodic CNT arrays was developed in this study, which involves the use of the inverse nano-sphere lithography (INSL) process. Mo of a honeycomb pattern, acting as a catalyst-poisoning layer, was produced by the nano-sphere lithography (NSL) process; the Mo poisoned the catalyst and prevented CNT growth where deposited, and as a result, a periodic CNT pattern was obtained. Using this method, the uniformity of the CNT array can be improved by preventing the negative effect of arrangement defects in self-assembled monolayers. The size and the period of the CNT array can be adjusted by careful selection of the polystyrene (PS) sphere diameter. X-ray photoelectron spectroscope (XPS) analysis revealed that the Co catalyst was ineffective on the areas of Mo deposition due to the diffusion of Co into the Mo layer.

Comparison of positive-pressure, passive ultrasonic, and laser-activated irrigations on smear-layer removal from the root canal surface.

Science.gov (United States)

Sahar-Helft, Sharonit; Sarp, Ayşe Sena Kabaş; Stabholtz, Adam; Gutkin, Vitaly; Redenski, Idan; Steinberg, Doron

2015-03-01

The purpose of this study was to compare the efficacy of three irrigation techniques for smear-layer removal with 17% EDTA. Cleaning and shaping the root canal system during endodontic treatment produces a smear layer and hard tissue debris. Three irrigation techniques were tested for solution infiltration of this layer: positive-pressure irrigation, passive ultrasonic irrigation, and laser-activated irrigation. Sixty extracted teeth were divided into six equal groups; 17% EDTA was used for 60 sec irrigation of five of the groups. The groups were as follows: Group 1, treated only with ProTaper™ F3 Ni-Ti files; Group 2, positive-pressure irrigation, with a syringe; Group 3, passive ultrasonic irrigation, inserted 1 mm short of the working length; Group 4, passive ultrasonic irrigation, inserted in the upper coronal third of the root; Group 5, Er:YAG laser-activated irrigation, inserted 1 mm short of the working length; and Group 6, Er:YAG laser-activated irrigation, inserted in the upper coronal third of the root. Scanning electron microscopy showed that the smear layer is removed most efficiently using laser-activated irrigation at low energy with 17% EDTA, inserted either at the working length or only in the coronal upper third of the root. Amounts of Ca, P, and O were not significantly different on all treated dentin surfaces. Smear-layer removal was most effective when the root canals were irrigated using Er:YAG laser at low energy with 17% EDTA solution. Interestingly, removal of the smear layer along the entire canal was similar when the laser was inserted in the upper coronal third and at 1 mm short of the working length of the root canal. This effect was not observed with the ultrasonic and positive-pressure techniques.

Effect of annealing temperature on the anatase and rutile TiO2 nano tubes formation

International Nuclear Information System (INIS)

Zainovia Lockman; Kit, C.H.; Srimala Sreekantan

2009-01-01

Herein, we report on the optimum condition for TiO 2 titania nano tubes formation and the effect of annealing on the formation of anatse and rutile titania. Anodic oxidation was carried out in two electrodes bath consisting of 5 wt % NH 4 F ions. The anode was a 0.1 mm thick Ti foil and the cathode was Pt electrode. Anodization was conducted at 20 V. The anodised foils were subjected to morphological and structural characterizations. As-anodised foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, x-ray diffraction analysis revealed the presence of (101) anatase at annealing temperature from 400 - 500 degree Celsius. This indicates that the transformation occurs at this range of temperatures. Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 degree Celsius. At above 600 degree Celsius, x-ray diffraction pattern shows a peak belonging to the rutile peak. Transformation from anatase to rutile is thought to occur at about 500 degree Celsius with a more complete transformation at higher temperature. Annealing at higher than 600 degree Celsius induces thickening of the nano tubes wall and at above 700 degree Celsius, the nano tubes structure has completely disappeared. (author)

In-Flight Formation of Nano-Crystalline Titanium Dioxide Powder in a Plasma Jet and Its Characterization

International Nuclear Information System (INIS)

Ananthapadmanabhan, P. V.; Thiyagarajan, T. K.; Sreekumar, K. P.; Vijay, M.; Selvarajan, V.; Yu, Jiaguo; Liu, Shengwei

2010-01-01

Nanocrystalline titanium dioxide powder was synthesized by in-flight oxidation of titanium dihydride (TiH 2 ) powder in a thermal plasma jet. TiH 2 powder was injected into the thermal plasma jet and allowed to react with oxygen injected downstream the jet. Characterization of the powder by various analytical tools indicated that the powder consisted of nano-sized titanium dioxide particles consisting predominantly of the anatase phase. It is suggested that the thermo-chemistry of the oxidation process contributes significantly to the formation of nano-sized titania. The large energy released during the oxidation process dissociates the TiO 2 particles into TiO (g) and titanium vapour, which recombine downstream with oxygen and form nano particles of TiO 2 .

High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

National Research Council Canada - National Science Library

Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

2004-01-01

.... Utilizing a coplanar device design we successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, which will allow...

A Novel Silicon-based Wideband RF Nano Switch Matrix Cell and the Fabrication of RF Nano Switch Structures

Directory of Open Access Journals (Sweden)

Yi Xiu YANG

2011-12-01

Full Text Available This paper presents the concept of RF nano switch matrix cell and the fabrication of RF nano switch. The nano switch matrix cell can be implemented into complex switch matrix for signal routing. RF nano switch is the decision unit for the matrix cell; in this research, it is fabricated on a tri-layer high-resistivity-silicon substrate using surface micromachining approach. Electron beam lithography is introduced to define the pattern and IC compatible deposition process is used to construct the metal layers. Silicon-based nano switch fabricated by IC compatible process can lead to a high potential of system integration to perform a cost effective system-on-a-chip solution. In this paper, simulation results of the designed matrix cell are presented; followed by the details of the nano structure fabrication and fabrication challenges optimizations; finally, measurements of the fabricated nano structure along with analytical discussions are also discussed.

Passive scalar transport mediated by laminar vortex rings

Energy Technology Data Exchange (ETDEWEB)

Hernández, R H; Rodríguez, G, E-mail: rohernan@ing.uchile.cl [LEAF-NL, Depto. Ingeniería Civil Mecánica, Universidad de Chile, Casilla 2777, Santiago (Chile)

2017-04-15

Numerical simulations were used to study the dynamics of a passive conserved scalar quantity entrained by a self-propelling viscous vortex ring. The transport and mixing process of the passive scalar variable were studied considering two initial scalar distributions: (i) The scalar substance was introduced into the ring during its formation, further focusing in the shedding into the wake of the ring; (ii) A disk-like scalar layer was placed in the ring’s path where the entrainment of the scalar substance into the ring bubble was studied as a function of the ring strength. In both cases, the scalar concentration inside the vortex bubble exhibits a steady decay with time. In the second case, it was shown that the entrained scalar mass grows with both the Reynolds number of the ring and the thickness of the scalar layer in the propagation direction. The ring can be viewed as a mechanism for scalar transportation along important distances. (paper)

Properties, ageing behavior and stability of bipolar films containing nano-layers of allylamine and acrylic acid plasma polymers

Science.gov (United States)

Aziz, Gaelle; Asadian, Mahtab; Declercq, Heidi; Morent, Rino; De Geyter, Nathalie

2018-06-01

In this work, a dielectric barrier discharge (DBD) has been used for the deposition of bipolar films containing alternating nano-layers of plasma polymerized allylamine (PPAam) and acrylic acid (PPAac). Various films were obtained by varying the single-layer thickness of each plasma polymer while maintaining a constant total film thickness and two kinds of films were fabricated via different depositing sequences (PPAam/Aac and PPAac/Aam). Films properties, ageing in air and stability in water over a 7 days period were investigated. Results showed that, COO- and NH3+ polar entities, generated from the interaction of PPAam and PPAac, are present in the bipolar films. Concerning the films stability, the different reaction mechanisms involved in the formation of each kind of films resulted in a higher amount of polar groups in the PPAam/Aac films; this conferred these films a higher stability than PPAac/Aam. Concerning the films ageing behavior, all prepared samples underwent some kind of ageing which was found to be dependent on the deposition sequence. Results also showed that bipolar coatings exhibited better cell-material interactions compared to PPAam and PPAac films; with a better cell viability observed on PPAam/Aac coatings after 1 and 7 days culture.

Direct evidence of void passivation in Cu(InGa)(SSe){sub 2} absorber layers

Energy Technology Data Exchange (ETDEWEB)

Lee, Dongho; Kim, Young-Su; Mo, Chan B.; Huh, Kwangsoo; Yang, JungYup, E-mail: jungyupyang@gmail.com, E-mail: ddang@korea.ac.kr; Nam, Junggyu; Baek, Dohyun; Park, Sungchan; Kim, ByoungJune; Kim, Dongseop [PV Development Team, Energy Solution Business Division, Samsung SDI, 467 Beonyeong-ro, Seobuk-gu, Cheonan-si, Chungcheongnam-do 331-330 (Korea, Republic of); Lee, Jaehan [Core Technology Laboratory, Battery Research Center, Samsung SDI, 130 Samsung-ro, Yeongtong-gu Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); Heo, Sung; Park, Jong-Bong [Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of); Kang, Yoonmook, E-mail: jungyupyang@gmail.com, E-mail: ddang@korea.ac.kr [KUKIST Green School, Graduate School of Energy and Environment, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)

2015-02-23

We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer.

Hydrophobic Polystyrene Passivation Layer for Simultaneously Improved Efficiency and Stability in Perovskite Solar Cells.

Science.gov (United States)

Li, Minghua; Yan, Xiaoqin; Kang, Zhuo; Huan, Yahuan; Li, Yong; Zhang, Ruxiao; Zhang, Yue

2018-06-06

The major restraint for the commercialization of the high-performance hybrid metal halide perovskite solar cells is the long-term stability, especially at the infirm interface between the perovskite film and organic charge-transfer layer. Recently, engineering the interface between the perovskite and spiro-OMeTAD becomes an effective strategy to simultaneously improve the efficiency and stability in the perovskite solar cells. In this work, we demonstrated that introducing an interfacial polystyrene layer between the perovskite film and spiro-OMeTAD layer can effectively improve the perovskite solar cells photovoltaic performance. The inserted polystyrene layer can passivate the interface traps and defects effectively and decrease the nonradiative recombination, leading to enhanced photoluminescence intensity and carrier lifetime, without compromising the carrier extraction and transfer. Under the optimized condition, the perovskite solar cells with the polystyrene layer achieve an enhanced average power efficiency of about 19.61% (20.46% of the best efficiency) from about 17.63% with negligible current density-voltage hysteresis. Moreover, the optimized perovskite solar cells with the hydrophobic polystyrene layer can maintain about 85% initial efficiency after 2 months storage in open air conditions without encapsulation.

Outstanding resistance and passivation behaviour of new Fe-Co metal-metal glassy alloys in alkaline media.

Directory of Open Access Journals (Sweden)

Khadijah M Emran

Full Text Available The electrochemical behavior of the oxide layers on two metal-metal glassy alloys, Fe78Co9Cr10Mo2Al1 (VX9and Fe49Co49V2 (VX50 (at.%, were studied using electrochemical techniques including electrochemical frequency modulation (EFM, electrochemical impedance spectroscopy (EIS and cyclic polarization (CP measurements. The morphology and composition of the alloy surfaces were investigated using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and atomic force microscopy (AFM. The corrosion rate and surface roughness of both alloys increased as the concentration of NaOH in aqueous solution was raised. The presence of some protective elements in the composition of the alloys led to the formation of a spontaneous passive layer on the alloy surface. The higher resistance values of both alloys were associated with the magnitude of the dielectric properties of the passive films formed on their surfaces. Both alloys are classified as having outstanding resistance to corrosion, which results from the formation of a passive film that acts as an efficient barrier to corrosion in alkaline solution.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

International Nuclear Information System (INIS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Uraoka, Yukiharu; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ∼13 cm 2 V −1 s −1 and small threshold voltage which varied from ∼0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. (paper)

Efficient small molecular organic light emitting diode with graphene cathode covered by a Sm layer with nano-hollows and n-doped by Bphen:Cs2CO3 in the hollows

Science.gov (United States)

Yao, Li; Li, Lei; Qin, Laixiang; Ma, Yaoguang; Wang, Wei; Meng, Hu; Jin, Weifeng; Wang, Yilun; Xu, Wanjin; Ran, Guangzhao; You, Liping; Qin, Guogang

2017-03-01

Graphene is a favorable candidate for electrodes of organic light emitting diodes (OLEDs). Graphene has quite a high work function of ˜4.5 eV, and has been extensively studied when used as anodes of OLEDs. In order to use graphene as a cathode, the electron injection barrier between the graphene cathode and the electron transport layer has to be low enough. Using 4,7-diphenyl-1,10-phenanthroline (Bphen):Cs2CO3 to n-dope graphene is a very good method, but the electron injection barrier between the n-doped graphene and Bphen:Cs2CO3 is still too high to be ˜1.0 eV. In this work, in order to further reduce the electron injection barrier, a novel method is suggested. On the graphene cathode, a Sm layer with a lot of nano-hollows, and subsequently a layer of Bphen:Cs2CO3, are deposited. The Bphen:Cs2CO3 can n-dope graphene in the nano-hollows, and the Fermi level of the graphene rises. The nano Sm layer is very easily oxidized. Oxygen adsorbed on the surface of graphene may react with Sm to form an O--Sm+ dipole layer. On the areas of the Sm oxide dipole layer without nano-hollows, the electron injection barrier can be further lowered by the dipole layer. Electrons tend to mainly inject through the lower electron barrier where the dipole layer exists. Based on this idea, an effective inverted small molecular OLED with the structure of graphene/1 nm Sm layer with a lot of nano-hollows/Bphen:Cs2CO3/Alq3:C545T/NPB/MoO3/Al is presented. The maximum current efficiency and maximum power efficiency of the OLED with a 1 nm Sm layer are about two and three times of those of the reference OLED without any Sm layer, respectively.

XPS and STEM study of the interface formation between ultra-thin Ru and Ir OER catalyst layers and perylene red support whiskers

Directory of Open Access Journals (Sweden)

Atanasoska Ljiljana L.

2013-01-01

Full Text Available The interface formation between nano-structured perylene red (PR whiskers and oxygen evolution reaction (OER catalysts ruthenium and iridium has been studied systematically by XPS and STEM. The OER catalyst over-layers with thicknesses ranging from ~0.1 to ~50 nm were vapor deposited onto PR ex-situ. STEM images demonstrate that, with increasing thickness, Ru and Ir transform from amorphous clusters to crystalline nanoparticles, which agglomerate with increased over-layer thickness. XPS data show a strong interaction between Ru and PR. Ir also interacts with PR although not to the extent seen for Ru. At low coverages, the entire Ru deposit is in the reacted state while a small portion of the deposited Ir remains metallic. Ru and Ir bonding occur at the PR carbonyl sites as evidenced by the attenuation of carbonyl photoemission and the emergence of new peak assigned to C-O single bond. The curve fitting analysis and the derived stoichiometry indicates the formation of metallo-organic bonds. The co-existence of oxide bonds is also apparent.

Initial Stages of GaAs/Au Eutectic Alloy Formation for the Growth of GaAs Nano wires

International Nuclear Information System (INIS)

Rosnita, M.; Yussof, W.; Zuhairi, I.; Zulkafli, O.; Samsudi, S.

2012-01-01

Annealing temperature plays an important role in the formation of an Au-Ga eutectic alloy. The effects of the annealing temperature on gold nanoparticles colloid and substrate surface were studied using AFM, FE-SEM and TEM. At 600 degree Celsius, the layer of gold colloids particle formed an island in the state of molten eutectic alloy and absorbed evaporated metal-organics to formed nano wire (NW) underneath the alloy. Pit formed on the substrate surface due to the chemical reactions during the annealing process have an impact on the direction of growth of the NW. Without annealing, the NW formed vertically on the GaAs (100) surface. The growth direction depends on the original nucleation facets and surface energy when annealed. When annealed, the wire base is large and curved due to the migration of Ga atoms on the substrate surface towards the tip of the wire and the line tension between the substrate surface and gold particle. (author)

Determining the Scattering Properties of Vertically-Structured Nepheloid Layers From the Fusion of Active and Passive Optical Sensors

National Research Council Canada - National Science Library

Bissett, W. P; Kohler, David D

2006-01-01

... from the bottom back toward the surface. The net result is that these layers reduce the ability of active and passive optical instruments to retrieve estimates of bathymetry and bottom classification, as well as reduce the abilities...

Enhanced optical-to-THz conversion efficiency of photoconductive antenna using dielectric nano-layer encapsulation

Science.gov (United States)

Gupta, Abhishek; Rana, Goutam; Bhattacharya, Arkabrata; Singh, Abhishek; Jain, Ravikumar; Bapat, Rudheer D.; Duttagupta, S. P.; Prabhu, S. S.

2018-05-01

Photoconductive antennas (PCAs) are among the most conventional devices used for emission as well as detection of terahertz (THz) radiation. However, due to their low optical-to-THz conversion efficiencies, applications of these devices in out-of-laboratory conditions are limited. In this paper, we report several factors of enhancement in THz emission efficiency from conventional PCAs by coating a nano-layer of dielectric (TiO2) on the active area between the electrodes of a semi-insulating GaAs-based device. Extensive experiments were done to show the effect of thicknesses of the TiO2 layer on the THz power enhancement with different applied optical power and bias voltages. Multiphysics simulations were performed to elucidate the underlying physics behind the enhancement of efficiency of the PCA. Additionally, this layer increases the robustness of the electrode gaps of the PCAs with high electrical insulation as well as protect it from external dust particles.

Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

Science.gov (United States)

2017-06-05

potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

Science.gov (United States)

Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

2017-04-19

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Semiconductor Nano wires and Nano tubes: From Fundamentals to Diverse Applications

International Nuclear Information System (INIS)

Xiong, Q.; Grimes, C.A.; Zacharias, M.; Morral, A.F.; Hiruma, K.; Shen, G.

2012-01-01

Research in the field of semiconductor nano wires (SNWs) and nano tubes has been progressing into a mature subject with several highly interdisciplinary sub areas such as nano electronics, nano photonics, nano composites, bio sensing, optoelectronics, and solar cells. SNWs represent a unique system with novel properties associated to their one-dimensional (1D) structures. The fundamental physics concerning the formation of discrete 1D subbands, coulomb blockade effects, ballistic transport, and many-body phenomena in 1D nano wires and nano tubes provide a strong platform to explore the various scientific aspects in these nano structures. A rich variety of preparation methods have already been developed for generating well-controlled 1D nano structures and from a broad range of materials. The present special issue focuses on the recent development in the mechanistic understanding of the synthesis, the studies on electrical/optical properties of nano wires and their applications in nano electronics, nano photonics, and solar-energy harvesting. In this special issue, we have several invited review articles and contributed papers that are addressing current status of the fundamental issues related to synthesis and the diverse applications of semiconducting nano wires and nano tubes. One of the papers reviews the progress of the top-down approach of developing silicon-based vertically aligned nano wires to explore novel device architectures and integration schemes for nano electronics and clean energy applications. Another paper reviews the recent developments and experimental evidences of probing the confined optical and acoustic phonon in nonpolar semiconducting (Si and Ge) nano wires using Raman spectroscopy. The paper by K. Hiruma et al. spotlights the III semiconductor nano wires and demonstrates selective-area metal organic vapor phase epitaxy grown GaAs/In(Al)GaAs and InP/InAs/InP nano wires with heterojunctions along their axial and radial directions. The paper

Formation mechanism of the protective layer in a blast furnace hearth

Science.gov (United States)

Jiao, Ke-xin; Zhang, Jian-liang; Liu, Zheng-jian; Xu, Meng; Liu, Feng

2015-10-01

A variety of techniques, such as chemical analysis, scanning electron microscopy-energy dispersive spectroscopy, and X-ray diffraction, were applied to characterize the adhesion protective layer formed below the blast furnace taphole level when a certain amount of titanium- bearing burden was used. Samples of the protective layer were extracted to identify the chemical composition, phase assemblage, and distribution. Furthermore, the formation mechanism of the protective layer was determined after clarifying the source of each component. Finally, a technical strategy was proposed for achieving a stable protective layer in the hearth. The results show that the protective layer mainly exists in a bilayer form in the sidewall, namely, a titanium-bearing layer and a graphite layer. Both the layers contain the slag phase whose major crystalline phase is magnesium melilite (Ca2MgSi2O7) and the main source of the slag phase is coke ash. It is clearly determined that solid particles such as graphite, Ti(C,N) and MgAl2O4 play an important role in the formation of the protective layer, and the key factor for promoting the formation of a stable protective layer is reasonable control of the evolution behavior of coke.

Laser nano-manufacturing: state of the art and challenges

NARCIS (Netherlands)

Li, L.; Hong, M.; Schmidt, M.; Zhong, M.; Mashe, A.; Huis in 't veld, A.J.; Kovalenko, V.

2011-01-01

This paper provides an overview of advances in laser based nano-manufacturing technologies including surface nano-structure manufacturing, production of nano materials (nanoparticles, nanotubes and nanowires) and 3D nano-structures manufacture through multiple layer additive techniques and

Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jingnan Tong

2018-02-01

Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

Cell characteristics of a multiple alloy nano-dots memory structure

International Nuclear Information System (INIS)

Bea, Ji Chel; Lee, Kang-Wook; Tanaka, Tetsu; Koyanagi, Mitsumasa; Song, Yun Heub; Lee, Gae-Hun

2009-01-01

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (∼5.2 eV) and extremely high dot density (∼1.2 × 10 13 cm −2 ) was fabricated. Its structural effect for multiple layers was evaluated and compared to the one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with two to four multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler–Nordheim (FN) tunneling could be a candidate structure for future flash memory

Synthesis and characterization of (zinc-layered hydroxide-hippurate) nano hybrid by direct reaction of zinc oxide under aqueous environment

International Nuclear Information System (INIS)

Mohd Zobir Hussein; Samer Hasan Al Ali; Zulkarnain Zainal

2011-01-01

A new method for synthesis of hippurate nano hybrid has been developed. In this method, zinc oxide was added directly into aqueous solution of hippurate anions (A - ). The resulting hippurate nano hybrid (HAN) is composed of the organic moieties sandwiched between zinc layered hydroxide (ZLH) inorganic interlayers. HAN synthesized using 0.2 M hippuric acid showed the best crystallinity compared to other samples synthesized in this work. X-ray powder diffraction shows the basal spacing of the HAN was 21.3 Angstrom indicating that the monolayer of A - was arranged vertically to the ZLH interlayers. (author)

NanoRocks: Design and performance of an experiment studying planet formation on the International Space Station

Science.gov (United States)

Brisset, Julie; Colwell, Joshua; Dove, Adrienne; Maukonen, Doug

2017-07-01

In an effort to better understand the early stages of planet formation, we have developed a 1.5U payload that flew on the International Space Station (ISS) in the NanoRacks NanoLab facility between September 2014 and March 2016. This payload, named NanoRocks, ran a particle collision experiment under long-term microgravity conditions. The objectives of the experiment were (a) to observe collisions between mm-sized particles at relative velocities of acrylic, glass, and copper beads and 0.75 mm-sized JSC-1 lunar regolith simulant grains. The particles were placed in sample cells carved out of an aluminum tray. This tray was attached to one side of the payload casing with three springs. Every 60 s, the tray was agitated, and the resulting collisions between the particles in the sample cells were recorded by the experiment camera. During the 18 months the payload stayed on ISS, we obtained 158 videos, thus recording a great number of collisions. The average particle velocities in the sample cells after each shaking event were around 1 cm/s. After shaking stopped, the inter-particle collisions damped the particle kinetic energy in less than 20 s, reducing the average particle velocity to below 1 mm/s, and eventually slowing them to below our detection threshold. As the particle velocity decreased, we observed the transition from bouncing to sticking collisions. We recorded the formation of particle clusters at the end of each experiment run. This paper describes the design and performance of the NanoRocks ISS payload.

Micro-/nano-characterization of the surface structures on the divertor tiles from JET ITER-like wall

Energy Technology Data Exchange (ETDEWEB)

Tokitani, M., E-mail: tokitani.masayuki@LHD.nifs.ac.jp [National Institute for Fusion Science, Oroshi, Toki, Gifu 509-5292 (Japan); Miyamoto, M. [Shimane University, Matsue, Shimane 690-8504 (Japan); Masuzaki, S. [National Institute for Fusion Science, Oroshi, Toki, Gifu 509-5292 (Japan); Fujii, Y. [Shimane University, Matsue, Shimane 690-8504 (Japan); Sakamoto, R. [National Institute for Fusion Science, Oroshi, Toki, Gifu 509-5292 (Japan); Oya, Y. [Shizuoka University, Shizuoka 422-8529 (Japan); Hatano, Y. [University of Toyama, Toyama 930-8555 (Japan); Otsuka, T. [Kindai University, Higashi-Osaka, Osaka, 577-8502 (Japan); Oyaidzu, M.; Kurotaki, H.; Suzuki, T.; Hamaguchi, D.; Isobe, K.; Asakura, N. [National Institute for Quantum and Radiological Science and Technology (QST), Rokkasho Aomori 039-3212 (Japan); Widdowson, A. [EUROfusion Consortium, JET, Culham Science Centre, Abingdon, OX14 3DB (United Kingdom); Rubel, M. [Royal Institute of Technology (KTH), 100 44 Stockholm (Sweden)

2017-03-15

Highlights: • Micro-/nano-characterization of the surface structures on the divertor tiles from JET ITER-like wall were studied. • The stratified mixed-material deposition layer composed by W, C, O, Mo and Be with the thickness of ∼1.5 μm was formed on the apron of Tile 1. • The study revealed the micro- and nano-scale modification of the inner tile surface of the JET ILW. - Abstract: Micro-/nano-characterization of the surface structures on the divertor tiles used in the first campaign (2011–2012) of the JET tokamak with the ITER-like wall (JET ILW) were studied. The analyzed tiles were a single poloidal section of the tile numbers of 1, 3 and 4, i.e., upper, vertical and horizontal targets, respectively. A sample from the apron of Tile 1 was deposition-dominated. Stratified mixed-material layers composed of Be, W, Ni, O and C were deposited on the original W-coating. Their total thickness was ∼1.5 μm. By means of transmission electron microscopy, nano-size bubble-like structures with a size of more than 100 nm were identified in that layer. They could be related to deuterium retention in the layer dominated by Be. The surface microstructure of the sample from Tile 4 also showed deposition: a stratified mixed-material layer with the total thickness of 200–300 nm. The electron diffraction pattern obtained with transmission electron microscope indicated Be was included in the layer. No bubble-like structures have been identified. The surface of Tile 3, originally coated by Mo, was identified as the erosion zone. This is consistent with the fact that the strike point was often located on that tile during the plasma operation. The study revealed the micro- and nano-scale modification of the inner tile surface of the JET ILW. In particular, a complex mixed-material deposition layer could affect hydrogen isotope retention and dust formation.

Studying the formation of CaCO3 polymorphs during the carbonation of nano-lime suspension in ethanol

International Nuclear Information System (INIS)

Sevcik, R.; Perez-Estebanez, M.; Macova, P.

2015-01-01

The paper is devoted to studying nano-lime and the formation of CaCO 3 polymorphs during this process. Nano-lime means a suspension of Ca(OH) 2 in alcohol, in this case ethanol (CaLoSil(R) E25). Carbonation reaction of nano-lime suspension having a concentration of 25 g l -1 and 5 ml was studied in a climatic chamber at a constant temperature and humidity conditions (T = 20 (1) DEG C., 65 (5), RH). At regular intervals (7, 14, 21 and 28 days), the samples were analyzed by infrared spectroscopy (FTIR), X-ray powder diffraction (XRPD) and observed under a scanning electron microscope (SEM). Quantitative determination was performed by Rietvelde's smoothing from XPRD data. It was found that the samples contained three crystalline forms of CaCO 3 - calcite, aragonite and vaterite, the percentage of their time was variable. These results will be used in further research on the application of nano-lime on calcareous materials. (Authors)

Characterisation of nano-interdigitated electrodes

Energy Technology Data Exchange (ETDEWEB)

Skjolding, L H D; Ribayrol, A; Montelius, L [Division of Solid State Physics, Lund University, Box 118, SE-221 00 Lund (Sweden); Spegel, C [Department of Analytical Chemistry Lund University, Box 124, SE-221 00 Lund (Sweden); Emneus, J [MIC - Department of Micro and Nanotechnology, DTU - Building 345 East, DK-2800 Kgs. Lyngby (Denmark)], E-mail: lars_henrik.daehli_skjolding@ftf.lth.se

2008-03-15

Interdigitated electrodes made up of two individually addressable interdigitated comb-like electrode structures have frequently been suggested as ultra sensitive electrochemical biosensors. Since the signal enhancement effects due to cycling of the reduced and oxidized species are strongly dependent on the inter electrode distances, since the nature of the enhancement is due to overlying diffusion layers, interdigitated electrodes with an electrode separation of less then one micrometer are desired for maximum signal amplification. Fabrication of submicron structures can only be made by advanced lithography techniques. By use of electron beam lithography we have fabricated arrays of interdigitated electrodes with an electrode separation distance of 200 nm and an electrode finger width of likewise 200 nm. The entire electrode structure is 100 micrometre times 100 micrometre, and the active electrode area is dictated by the opening in the passivation layer, that is defined by UV lithography. Here we report measurements of redox cycling of ferrocyanide by coupled cyclic voltammograms, where the potential at one of the working electrodes are varied and either an oxidising or reducing potential is applied to the complimentary interdigitated electrode. The measurements show fast conversion and high collection efficiency round 87% as expected for nano-interdigitated electrodes.

Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xie, Wenkun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-11-15

Graphical abstract: In this paper, molecular dynamics simulation is performed to study the distribution of dislocation defects and local atomic crystal structure of single crystal copper. The stress distribution is investigated which is calculated by virial stress and analyzed by static pressure. The results are shown in (a)–(d). It is indicated that the compressive stress mainly spreads over the shear-slip zone, and the tensile stress is consisted in flank friction zone, shown in (a). The high tensile stress in subsurface is the source of stress, shown in (b). By the driven action of the stress source, the initial stair-rod dislocation nucleates. Then the dislocation climbs along four {1 1 1} planes under the stress driven action, shown in (d). Finally, the SFT is formed by the interaction of the compressive stress and the tensile stress which come from the shear-slip zone and friction zone, respectively. Besides, stair-rod dislocation, stacking faults and dislocation loop are also nucleated in the subsurface, shown in (c). Dislocation distribution, local atomic crystal structure state and stress-induced formation process of SFT by atomic. - Highlights: • A novel defect structure “stress-induced stacking fault tetrahedra” is revealed. • Atomic structural evolution and stress state distribution of the SFT are studied. • The stress-induced formation mechanism of the SFT is proposed. - Abstract: Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic metals, has great influence on machining precision and surface roughness in nano-cutting. Here we report, a stacking fault tetrahedra is formed in subsurface of workpiece during nano-cutting. The variation of cutting force and subsurface defects distribution are studied by using molecular dynamics simulation. The stress distribution is investigated which is calculated by virial stress and analyzed by static compression. The result shows that the cutting force has a rapidly

Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

International Nuclear Information System (INIS)

Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Guo, Yongbo; Xie, Wenkun

2015-01-01

Graphical abstract: In this paper, molecular dynamics simulation is performed to study the distribution of dislocation defects and local atomic crystal structure of single crystal copper. The stress distribution is investigated which is calculated by virial stress and analyzed by static pressure. The results are shown in (a)–(d). It is indicated that the compressive stress mainly spreads over the shear-slip zone, and the tensile stress is consisted in flank friction zone, shown in (a). The high tensile stress in subsurface is the source of stress, shown in (b). By the driven action of the stress source, the initial stair-rod dislocation nucleates. Then the dislocation climbs along four {1 1 1} planes under the stress driven action, shown in (d). Finally, the SFT is formed by the interaction of the compressive stress and the tensile stress which come from the shear-slip zone and friction zone, respectively. Besides, stair-rod dislocation, stacking faults and dislocation loop are also nucleated in the subsurface, shown in (c). Dislocation distribution, local atomic crystal structure state and stress-induced formation process of SFT by atomic. - Highlights: • A novel defect structure “stress-induced stacking fault tetrahedra” is revealed. • Atomic structural evolution and stress state distribution of the SFT are studied. • The stress-induced formation mechanism of the SFT is proposed. - Abstract: Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic metals, has great influence on machining precision and surface roughness in nano-cutting. Here we report, a stacking fault tetrahedra is formed in subsurface of workpiece during nano-cutting. The variation of cutting force and subsurface defects distribution are studied by using molecular dynamics simulation. The stress distribution is investigated which is calculated by virial stress and analyzed by static compression. The result shows that the cutting force has a rapidly

Frontiers in nano-therapeutics

CERN Document Server

Tasnim, Nishat; Sai Krishna, Katla; Kalagara, Sudhakar; Narayan, Mahesh; Noveron, Juan C; Joddar, Binata

2017-01-01

This brief highlights recent research advances in the area of nano-therapeutics. Nanotechnology holds immense potential for application in a wide range of biological and engineering applications such as molecular sensors for disease diagnosis, therapeutic agents for the treatment of diseases, a vehicle for delivering therapeutics and imaging agents for theranostic applications, both in-vitro and in-vivo. The brief is grouped into the following sections namely, A) Discrete Nanosystems ; B) Anisotropic Nanoparticles; C) Nano-films/coated/layered and D) Nano-composites.

Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

International Nuclear Information System (INIS)

Safran, G.; Suzuki, T.; Ouchi, K.; Barna, P.B.; Radnoczi, G.

2006-01-01

Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al 2 O 3 and SiO 2 additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1 FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11-bar0]//FeSi(100)[11-bar0]//MgO(100) [001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54 o to the surface. Films with SiO 2 addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al 2 O 3 addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al 2 O 3 composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed. The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media

Application of artificial neural network and adaptive neuro-fuzzy inference system to investigate corrosion rate of zirconium-based nano-ceramic layer on galvanized steel in 3.5% NaCl solution

International Nuclear Information System (INIS)

Mousavifard, S.M.; Attar, M.M.; Ghanbari, A.; Dadgar, M.

2015-01-01

Highlights: • Film formation of Zr-based conversion coating under different conditions was investigated. • We study the effect of some parameters on anticorrosion performance of conversion coating. • Optimization of processing conditions for surface treatment of galvanized steel was obtained. • Modeling and predicting corrosion current density of treated surfaces was performed using ANN and ANFIS. - Abstract: A nano-ceramic Zr-based conversion solution was prepared and optimization of Zr concentration, pH, temperature and immersion time for the treatment of hot-dip galvanized steel (HDG) was performed. SEM microscopy was utilized to investigate the microstructure and film formation of the layer and the anticorrosion performance of conversion coating was studied using polarization test. Artificial intelligence systems (ANN and ANFIS) were applied on the data obtained from polarization test and the models for predicting corrosion current density values were attained. The outcome of these models showed proper predictability of the methods. The influence of input parameters was discussed and the optimized conditions for Zr-based conversion layer formation on the galvanized steel were obtained as follows: pH 3.8–4.5, Zr concentration of about 100 ppm, ambient temperature and immersion time of about 90 s

Application of artificial neural network and adaptive neuro-fuzzy inference system to investigate corrosion rate of zirconium-based nano-ceramic layer on galvanized steel in 3.5% NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Mousavifard, S.M. [Department of Polymer Engineering and Color Technology, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Attar, M.M., E-mail: attar@aut.ac.ir [Department of Polymer Engineering and Color Technology, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Ghanbari, A. [Department of Polymer Engineering and Color Technology, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Dadgar, M. [Textile Engineering Department, Neyshabur University, Neyshabur (Iran, Islamic Republic of)

2015-08-05

Highlights: • Film formation of Zr-based conversion coating under different conditions was investigated. • We study the effect of some parameters on anticorrosion performance of conversion coating. • Optimization of processing conditions for surface treatment of galvanized steel was obtained. • Modeling and predicting corrosion current density of treated surfaces was performed using ANN and ANFIS. - Abstract: A nano-ceramic Zr-based conversion solution was prepared and optimization of Zr concentration, pH, temperature and immersion time for the treatment of hot-dip galvanized steel (HDG) was performed. SEM microscopy was utilized to investigate the microstructure and film formation of the layer and the anticorrosion performance of conversion coating was studied using polarization test. Artificial intelligence systems (ANN and ANFIS) were applied on the data obtained from polarization test and the models for predicting corrosion current density values were attained. The outcome of these models showed proper predictability of the methods. The influence of input parameters was discussed and the optimized conditions for Zr-based conversion layer formation on the galvanized steel were obtained as follows: pH 3.8–4.5, Zr concentration of about 100 ppm, ambient temperature and immersion time of about 90 s.

Exploring Chondrule and CAI Rims Using Micro- and Nano-Scale Petrological and Compositional Analysis

Science.gov (United States)

Cartwright, J. A.; Perez-Huerta, A.; Leitner, J.; Vollmer, C.

2017-12-01

As the major components within chondrites, chondrules (mm-sized droplets of quenched silicate melt) and calcium-aluminum-rich inclusions (CAI, refractory) represent the most abundant and the earliest materials that solidified from the solar nebula. However, the exact formation mechanisms of these clasts, and whether these processes are related, remains unconstrained, despite extensive petrological and compositional study. By taking advantage of recent advances in nano-scale tomographical techniques, we have undertaken a combined micro- and nano-scale study of CAI and chondrule rim morphologies, to investigate their formation mechanisms. The target lithologies for this research are Wark-Lovering rims (WLR), and fine-grained rims (FGR) around CAIs and chondrules respectively, present within many chondrites. The FGRs, which are up to 100 µm thick, are of particular interest as recent studies have identified presolar grains within them. These grains predate the formation of our Solar System, suggesting FGR formation under nebular conditions. By contrast, WLRs are 10-20 µm thick, made of different compositional layers, and likely formed by flash-heating shortly after CAI formation, thus recording nebular conditions. A detailed multi-scale study of these respective rims will enable us to better understand their formation histories and determine the potential for commonality between these two phases, despite reports of an observed formation age difference of up to 2-3 Myr. We are using a combination of complimentary techniques on our selected target areas: 1) Micro-scale characterization using standard microscopic and compositional techniques (SEM-EBSD, EMPA); 2) Nano-scale characterization of structures using transmission electron microscopy (TEM) and elemental, isotopic and tomographic analysis with NanoSIMS and atom probe tomography (APT). Preliminary nano-scale APT analysis of FGR morphologies within the Allende carbonaceous chondrite has successfully discerned

Chemical composition and electronic structure of the passive layer formed on stainless steels in a glucose-oxidase solution

Energy Technology Data Exchange (ETDEWEB)

Marconnet, C. [Laboratoire de Genie des Procedes et des Materiaux, Ecole Centrale Paris, Grande Voie des Vignes, 92290 CHATENAY-MALABRY (France)], E-mail: cyril.marconnet@yahoo.fr; Wouters, Y. [Science et Ingenierie des Materiaux et Procedes, Institut National Polytechnique de Grenoble, F-38402 Saint-Martin d' Heres Cedex (France); Miserque, F. [Laboratoire de Reactivite des Surfaces et des Interfaces, CEA Saclay, Bat. 391, 91191 GIF-SUR-YVETTE (France); Dagbert, C. [Laboratoire de Genie des Procedes et des Materiaux, Ecole Centrale Paris, Grande Voie des Vignes, 92290 CHATENAY-MALABRY (France)], E-mail: catherine.dagbert@ecp.fr; Petit, J.-P. [Laboratoire d' Electrochimie et de Physico-chimie des Materiaux et des Interfaces, INPG, F-38402 Saint-Martin d' Heres Cedex (France); Galerie, A. [Science et Ingenierie des Materiaux et Procedes, Institut National Polytechnique de Grenoble, F-38402 Saint-Martin d' Heres Cedex (France); Feron, D. [Service de Corrosion et du Comportement des Materiaux dans leur Environnement, CEA Saclay, Bat. 458, 91191 GIF-SUR-YVETTE (France)

2008-12-01

This article deals with the interaction between the passive layer formed on UNS S30403 and S31254 stainless steels and an enzymatic solution containing glucose oxidase (GOx) and its substrate D-glucose. This enzymatic solution is often used to reproduce in laboratory the ennoblement occuring in non-sterile aerated aqueous environments because of the biofilm settlement on the surface of the metallic material. GOx catalyses the oxidation of D-glucose to gluconic acid by reducing oxygen to hydrogen peroxide and produces an organic acid. Thanks to photocurrent measurements, XPS analysis and Mott-Schottky diagrams, it is here shown that such an environment generates modifications in the chemical composition and electronic structure of the passive layer: it induces a relative enrichment of the n-type semi-conducting phase containing chromium (chromine Cr{sub 2}O{sub 3}) and an increase of the donors density in the space charge region.

Chemical composition and electronic structure of the passive layer formed on stainless steels in a glucose-oxidase solution

International Nuclear Information System (INIS)

Marconnet, C.; Wouters, Y.; Miserque, F.; Dagbert, C.; Petit, J.-P.; Galerie, A.; Feron, D.

2008-01-01

This article deals with the interaction between the passive layer formed on UNS S30403 and S31254 stainless steels and an enzymatic solution containing glucose oxidase (GOx) and its substrate D-glucose. This enzymatic solution is often used to reproduce in laboratory the ennoblement occuring in non-sterile aerated aqueous environments because of the biofilm settlement on the surface of the metallic material. GOx catalyses the oxidation of D-glucose to gluconic acid by reducing oxygen to hydrogen peroxide and produces an organic acid. Thanks to photocurrent measurements, XPS analysis and Mott-Schottky diagrams, it is here shown that such an environment generates modifications in the chemical composition and electronic structure of the passive layer: it induces a relative enrichment of the n-type semi-conducting phase containing chromium (chromine Cr 2 O 3 ) and an increase of the donors density in the space charge region

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2017-01-01

Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices.

Science.gov (United States)

Singh, S L; Singh, S B; Ghatak, K P

2018-04-01

In this paper an attempt is made to study the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II-VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of k → ⋅ p → ⋅ formalism and considering the energy band constants of a particular material. It is observed taking accumulation and inversion layers of Cd3As2, CdGeAs2, InSb, Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP, CdS, GaSb and Ge as examples that the FLM depends on sub band index for nano MOSFET devices made of Cd3As2 and CdGeAs2 materials which is the characteristic features such 2D systems. Besides, the FLM depends on the scattering potential in all the cases and the same mass changes with increasing surface electric field. The FLM exists in the band gap which is impossible without heavy doping.

The mechanism of the nano-CeO2 films deposition by electrochemistry method as coated conductor buffer layers

International Nuclear Information System (INIS)

Lu, Yuming; Cai, Shuang; Liang, Ying; Bai, Chuanyi; Liu, Zhiyong; Guo, Yanqun; Cai, Chuanbing

2015-01-01

Highlights: • Crack-free CeO 2 film thicker than 200 nm was prepared on NiW substrate by ED method. • Different electrochemical processes as hydroxide/metal mechanisms were identified. • The CeO 2 precursor films deposited by ED method were in nano-scales. - Abstract: Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO 2 films on Ni–5 at.%W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO 2 film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi-axial texture performance of buffer layers, the precursor CeO 2 films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO 2 films is believed to be attributed to the nano-effects of the precursors

Electrochemical and optical characterisation of passive films on stainless steels

International Nuclear Information System (INIS)

Wijesighe, T L Sudesh L; Blackwood, D J

2006-01-01

The formation and breakdown of the passive film are mainly controlled by ionic and electronic transport processes; processes that are in turn controlled by the electronic properties of the film. Consequently a comprehensive understanding of mechanisms behind passivity and localised corrosion require a detailed perception of the electronic properties of the passive films together with compositional and structural information. As a step towards this goal the passive film on austenitic stainless steel, AISI 316L, formed in borate solution was characterised by in situ Raman spectroscopy and photocurrent spectroscopy coupled with electrochemical measurements. The composition, structure and semiconductivity of the passive films depended on the potential; Fe rich n-type oxide and a Cr rich p-type oxide dominated at more positive potentials and more negative potentials respectively whilst n-type dual layered film formed at intermediate potentials. Analyses of the bandgap determined for these oxides suggested their structures to be Fe 2 O 3 and a Fe-Cr spinel. This hypothesis was supported by the results of in situ Raman spectroscopy

Organic Nano vesicular Cargoes for Sustained Drug Delivery: Synthesis, Vesicle Formation, Controlling “Pearling” States, and Terfenadine Loading/Release Studies

International Nuclear Information System (INIS)

Botcha, A.K.; Chandrasekar, R.; Dulla, B.; Reddy, E.R.; Rajadurai, M.S.; Chennubhotla, K.S.; Kulkarni, P.; Kulkarni, P.

2014-01-01

“Sustained drug delivery systems” which are designed to accomplish long-lasting therapeutic effect are one of the challenging topics in the area of nano medicine. We developed an innovative strategy to prepare nontoxic and polymer stabilized organic nano vesicles (diameter: 200 nm) from a novel bolaamphiphile, where two hydrogen bonding acetyl cytosine molecules connected to 4,4′′-positions of the 2,6-bispyrazolylpyridine through two flexible octyne chains. The nano vesicles behave like biological membrane by spontaneously self-assembling into “pearl-like” chains and subsequently forming long nano tubes (diameter: 150 nm), which further develop into various types of network-junctions through self-organization. For drug loading and delivery applications, the nano vesicles were externally protected with biocompatible poly(ethyleneglycol)-2000 to prevent them from fusion and ensuing tube formation. Nontoxic nature of the nano vesicles was demonstrated by zebra fish teratogenicity assay. Biocompatible nano vesicles were loaded with “terfenadine” drug and successfully utilized to transport and release drug in sustained manner (up to 72 h) in zebra fish larvae, which is recognized as an emerging in vivo model system Synthetic nano

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

International Nuclear Information System (INIS)

Gastrow, Guillaume von; Li, Shuo; Putkonen, Matti; Laitinen, Mikko; Sajavaara, Timo; Savin, Hele

2015-01-01

Highlights: • The ALD Al 2 O 3 passivation quality can be controlled by the ozone concentration. • Ozone concentration affects the Si/Al 2 O 3 interface charge and defect density. • A surface recombination velocity of 7 cm/s is reached combining ozone and water ALD. • Carbon and hydrogen concentrations correlate with the surface passivation quality. - Abstract: We study the impact of ozone-based Al 2 O 3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration can be achieved by a single process combining the water- and ozone-based reactions. This process results in an interface defect density of 2 × 10 11 eV −1 cm −2 , and maximum surface recombination velocities of 7.1 cm/s and 10 cm/s, after annealing and after an additional firing at 800 °C, respectively. In addition, our results suggest that the effective oxide charge density can be optimized in a simple way by varying the ozone concentration and by injecting water to the ozone process.

Impact and effects of simultaneous MeV-ion irradiation and helium plasma exposure to the formation of tungsten nano-tendrils

Science.gov (United States)

Wright, Graham; Kesler, Leigh Ann; Whyte, Dennis

2013-10-01

The extrusion of nano-tendrils from high temperature (>1000 K) tungsten (W) targets exposed to helium (He) plasma ions remains a concern for future fusion reactors. Previous work on the Alcator C-Mod tokamak has demonstrated it is possible to form these structures in a tokamak environment. However, one area where Alcator C-Mod and a fusion reactor differ is total neutron flux at the wall and the displacement damage these neutrons produce in the plasma-facing materials. This dsiplacement damage may affect the size and number He bubbles precipitating in the W target, which is a key factor in the formation and growth of the nano-tendrils. The DIONISOS experiment directly measures the impact of the displacement damage by simultaneously bombarding high temperature W targets with MeV-range ions (to simulate the displacement damage caused by neutron flux) and high flux of He plasma ions. Different combinations of irradiating ion species and W target temperatures are used to vary the different processes and rates that are involved such as He trapping rate, vacancy production and annealing rates, and nano-tendril growth rate. The nano-tendril growth is characterized by SEM imaging and focused ion beam (FIB) cross-sectioning and compared to nano-tendril formation without the presence of the irradiating ion beam. This work is supported by US DOE award DE-SC00-02060.

Fabrication of 3D nano-structures using reverse imprint lithography

Science.gov (United States)

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures. UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Fabrication of 3D nano-structures using reverse imprint lithography

International Nuclear Information System (INIS)

Han, Kang-Soo; Cho, Joong-Yeon; Lee, Heon; Hong, Sung-Hoon; Kim, Kang-In; Choi, Kyung-woo

2013-01-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures. UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED. (paper)

Microstructures and mechanical properties of Al/Al2O3 surface nano-composite layer produced by friction stir processing

International Nuclear Information System (INIS)

Shafiei-Zarghani, A.; Kashani-Bozorg, S.F.; Zarei-Hanzaki, A.

2009-01-01

In this study, a new processing technique, friction stir processing (FSP) was attempted to incorporate nano-sized Al 2 O 3 into 6082 aluminum alloy to form particulate composite surface layer. Samples were subjected to various numbers of FSP passes from one to four, with and without Al 2 O 3 powder. Microstructural observations were carried out by employing optical and scanning electron microscopy (SEM) of the cross sections both parallel and perpendicular to the tool traverse direction. Mechanical properties include microhardness and wear resistance, were evaluated in detail. The results show that the increasing in number of FSP passes causes a more uniform in distribution of nano-sized alumina particles. The microhardness of the surface improves by three times as compared to that of the as-received Al alloy. A significant improvement in wear resistance in the nano-composite surfaced Al is observed as compared to the as-received Al

Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes

KAUST Repository

Zhou, Yu

2017-08-25

Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes

KAUST Repository

Zhou, Yu; Wu, Di; Zhu, Yihan; Cho, Yujin; He, Qing; Yang, Xiao; Herrera, Kevin; Chu, Zhaodong; Han, Yu; Downer, Mike; Peng, Hailin; Lai, Keji

2017-01-01

Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.

Formation of nano-hydroxyapatite crystal in situ in chitosan-pectin polyelectrolyte complex network

International Nuclear Information System (INIS)

Li Junjie; Zhu Dunwan; Yin Jianwei; Liu Yuxi; Yao Fanglian; Yao Kangde

2010-01-01

Hydroxyapatite (HA)/polysaccharide composites have been widely used in bone tissue engineering due to their chemical similarity to natural bone. Polymer matrix-mediated synthesis of nano-hydroxyapatite is one of the simplest models for biomimetic. In this article, the nano-hydroxyapatite/chitosan-pectin (nHCP) composites were prepared through in situ mineralization of hydroxyapatite in chitosan-pectin polyelectrolyte complex (PEC) network. The formation processes of nHCP were investigated by X-ray diffraction (XRD) analysis. The interactions between nHA crystal and chitosan-pectin PEC networks were studied using Fourier Transform Infrared Spectroscopy (FTIR) and Differential Scanning Calorimetry (DSC). The morphology and structure of nHA crystal were characterized by XRD and Transmission Electron Microscope (TEM). Results suggested that the interfacial interactions between nano-hydroxyapatite crystal and chitosan-pectin PEC network assist the site specific nucleation and growth of nHA nanoparticles. The nHA crystals grow along the c-axis. In this process, pH value is the main factor to control the nucleation and growth of nHA crystal in chitosan-pectin PEC networks, because both the interactions' strength between nHA crystal and chitosan-pectin and diffusion rate of inorganic ions depend on the pH value of the reaction system. Apart from the pH value, the chitosan/pectin ratio and [Ca 2+ ] also take important effects on the formation of nHA crystal. An effective way to control the size of nHA crystal is to adjust the content of pectin and [Ca 2+ ]. It is interesting that the Zeta potential of nHCP composites is about - 30 mV when the chitosan/pectin ratio ≤ 1:1, and the dispersion solution of nHCP composites has higher stability, which provides the possibility to prepare 3D porous scaffolds with nHCP for bone tissue engineering.

Formation of nano-hydroxyapatite crystal in situ in chitosan-pectin polyelectrolyte complex network

Energy Technology Data Exchange (ETDEWEB)

Li Junjie [Department of Polymer Science and Key Laboratory of Systems Bioengineering of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072 (China); Research Institute of Polymeric Materials, Tianjin University, Tianjin, 300072 (China); Zhu Dunwan [Institute of Biomedical Engineering, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin, 300072 (China); Yin Jianwei; Liu Yuxi [Department of Polymer Science and Key Laboratory of Systems Bioengineering of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072 (China); Yao Fanglian, E-mail: yaofanglian@tju.edu.cn [Department of Polymer Science and Key Laboratory of Systems Bioengineering of Ministry of Education, School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072 (China); Yao Kangde [Research Institute of Polymeric Materials, Tianjin University, Tianjin, 300072 (China)

2010-07-20

Hydroxyapatite (HA)/polysaccharide composites have been widely used in bone tissue engineering due to their chemical similarity to natural bone. Polymer matrix-mediated synthesis of nano-hydroxyapatite is one of the simplest models for biomimetic. In this article, the nano-hydroxyapatite/chitosan-pectin (nHCP) composites were prepared through in situ mineralization of hydroxyapatite in chitosan-pectin polyelectrolyte complex (PEC) network. The formation processes of nHCP were investigated by X-ray diffraction (XRD) analysis. The interactions between nHA crystal and chitosan-pectin PEC networks were studied using Fourier Transform Infrared Spectroscopy (FTIR) and Differential Scanning Calorimetry (DSC). The morphology and structure of nHA crystal were characterized by XRD and Transmission Electron Microscope (TEM). Results suggested that the interfacial interactions between nano-hydroxyapatite crystal and chitosan-pectin PEC network assist the site specific nucleation and growth of nHA nanoparticles. The nHA crystals grow along the c-axis. In this process, pH value is the main factor to control the nucleation and growth of nHA crystal in chitosan-pectin PEC networks, because both the interactions' strength between nHA crystal and chitosan-pectin and diffusion rate of inorganic ions depend on the pH value of the reaction system. Apart from the pH value, the chitosan/pectin ratio and [Ca{sup 2+}] also take important effects on the formation of nHA crystal. An effective way to control the size of nHA crystal is to adjust the content of pectin and [Ca{sup 2+}]. It is interesting that the Zeta potential of nHCP composites is about - 30 mV when the chitosan/pectin ratio {<=} 1:1, and the dispersion solution of nHCP composites has higher stability, which provides the possibility to prepare 3D porous scaffolds with nHCP for bone tissue engineering.

The Corrosion Behavior of Stainless Steel 316L in Novel Quaternary Eutectic Molten Salt System

Science.gov (United States)

Wang, Tao; Mantha, Divakar; Reddy, Ramana G.

2017-03-01

In this article, the corrosion behavior of stainless steel 316L in a low melting point novel LiNO3-NaNO3-KNO3-NaNO2 eutectic salt mixture was investigated at 695 K which is considered as thermally stable temperature using electrochemical and isothermal dipping methods. The passive region in the anodic polarization curve indicates the formation of protective oxides layer on the sample surface. After isothermal dipping corrosion experiments, samples were analyzed using SEM and XRD to determine the topography, corrosion products, and scale growth mechanisms. It was found that after long-term immersion in the LiNO3-NaNO3-KNO3-NaNO2 molten salt, LiFeO2, LiFe5O8, Fe3O4, (Fe, Cr)3O4 and (Fe, Ni)3O4 oxides were formed. Among these corrosion products, LiFeO2 formed a dense and protective layer which prevents the SS 316L from severe corrosion.

Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

2002-01-01

In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

Shape-dependent electronic properties of blue phosphorene nano-flakes

Energy Technology Data Exchange (ETDEWEB)

Bhatia, Pradeep; Swaroop, Ram; Kumar, Ashok, E-mail: ashok@cup.ac.in [Center for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda-151001 (India)

2016-05-06

In recent year’s considerable attention has been given to the first principles method for modifying and controlling electronic properties of nano-materials. We performed DFT-based calculations on the electronic properties of zigzag-edged nano-flakes of blue phosphorene with three possible shapes namely rectangular, triangular and hexagonal. We observed that HOMO-LUMO gap of zigzag phosphorene nano-flakes with different shapes is ∼2.9 eV with H-passivations and ∼0.7 – 1.2 eV in pristine cases. Electronic properties of blue phosphorene nano-flakes show the strong dependence on their shape. We observed that distributions of molecular orbitals were strongly affected by the different shapes. Zigzag edged considered nanostructures are non-magnetic and semiconducting in nature. The shape dependent electronic properties may find applications in tunable nano-electronics.

Assessing the transport of PAH in the surficial sediment layer by passive sampler approach.

Science.gov (United States)

Belles, Angel; Alary, Claire; Criquet, Justine; Ivanovsky, Anastasia; Billon, Gabriel

2017-02-01

A new method based on passive samplers has been developed to assess the diffusive flux of fluorene, fluoranthene and pyrene in the sediment bed and across the sediment-water interface. The dissolved compound concentration gradient in the sediment in the vertical direction was measured at the outlet of a storm water pond by using polyethylene strips as passive samplers. Simultaneously, the dissipation of a set of tracer compounds preloaded in the passive samplers was measured to estimate the effective diffusion coefficients of the pollutants in the sediment. Both measurements were used to evaluate the diffusive flux of the compounds according to Fick's first law. The diffusive fluxes of the 3 studied compounds have been estimated with a centimetre-scale resolution in the upper 44cm of the sediment. According to the higher compound diffusion coefficient and the steeper concentration gradient in the surficial sediment layer, the results show that the net flux of compounds near the sediment interface (1cm depth) is on average 500 times higher than in the deep sediment, with average fluxes at 1cm depth on the order of 5, 0.1 and 0.1ng/m 2 /y for fluorene, fluoranthene and pyrene, respectively. Copyright © 2016 Elsevier B.V. All rights reserved.

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

Science.gov (United States)

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-01

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer ( 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm2/V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

Sputtering of molybdenum and tungsten nano rods and nodules irradiated with 150 eV argon ions

International Nuclear Information System (INIS)

Ghoniem, N.M.; Sehirlioglu, Alp; Neff, Anton L.; Allain, Jean-Paul; Williams, Brian; Sharghi-Moshtaghin, Reza

2015-01-01

Highlights: • The work was motivated by the idea of designing material surface architecture, using the CVD process, that can result in a reduction in the surface sputtering rate as compared to planar surfaces. • We present an experimental investigation of the effects of low energy (150 eV) Ar ions on surface sputtering, amorphization of near-surface layers, and the formation of surface ripples in Mo and W nano-rods and nano-nodules at room temperature. • We show that the sputtering rate decreases in all nano-architecture surfaces as compared to planar surfaces. • We discovered that energy deposition in the near surface layer in W leads to its amorphization at room temperature, to a depth of 5–10 nm. • We also show that surfaces of nano rods become rippled as a result of an ion-induced roughening instability. - Abstract: The influence of surface nano architecture on the sputtering and erosion of tungsten and molybdenum is discussed. We present an experimental investigation of the effects of low energy (150 eV) Ar ions on surface sputtering in Mo and W nano-rods and nano-nodules at room temperature. Measurements of the sputtering rate from Mo and W surfaces with nano architecture indicate that the surface topology plays an important role in the mechanism of surface erosion and restructuring. Chemical vapor deposition (CVD) is utilized as a material processing route to fabricate nano-architectures on the surfaces of W and Mo substrates. First, Re dendrites form as needles with cross-sections that have hexagonal symmetry, and are subsequently employed as scaffolding for further deposition of W and Mo to create nano rod surface architecture. The sputtering of surface atoms in these samples shows a marked dependence on their surface architecture. The sputtering rate is shown to decrease at normal ion incidence in all nano-architecture surfaces as compared to planar surfaces. Moreover, and unlike an increase in sputtering of planar crystalline surfaces, the

Self-organized semiconductor nano-network on graphene

Science.gov (United States)

Son, Dabin; Kim, Sang Jin; Lee, Seungmin; Bae, Sukang; Kim, Tae-Wook; Kang, Jae-Wook; Lee, Sang Hyun

2017-04-01

A network structure consisting of nanomaterials with a stable structural support and charge path on a large area is desirable for various electronic and optoelectronic devices. Generally, network structures have been fabricated via two main strategies: (1) assembly of pre-grown nanostructures onto a desired substrate and (2) direct growth of nanomaterials onto a desired substrate. In this study, we utilized the surface defects of graphene to form a nano-network of ZnO via atomic layer deposition (ALD). The surface of pure and structurally perfect graphene is chemically inert. However, various types of point and line defects, including vacancies/adatoms, grain boundaries, and ripples in graphene are generated by growth, chemical or physical treatments. The defective sites enhance the chemical reactivity with foreign atoms. ZnO nanoparticles formed by ALD were predominantly deposited at the line defects and agglomerated with increasing ALD cycles. Due to the formation of the ZnO nano-network, the photocurrent between two electrodes was clearly changed under UV irradiation as a result of the charge transport between ZnO and graphene. The line patterned ZnO/graphene (ZnO/G) nano-network devices exhibit sensitivities greater than ten times those of non-patterned structures. We also confirmed the superior operation of a fabricated flexible photodetector based on the line patterned ZnO/G nano-network.

In vitro study of nano-sized zinc doped bioactive glass

Energy Technology Data Exchange (ETDEWEB)

Goh, Yi-Fan; Alshemary, Ammar Z.; Akram, Muhammad [Department of Chemistry, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM skudai, Johor Darul Ta' zim (Malaysia); Abdul Kadir, Mohammed Rafiq [Medical Implant Technology Group, Faculty of Biomedical Engineering and Health Science, Universiti Teknologi Malaysia, 81310 UTMJohor Bahru (Malaysia); Hussain, Rafaqat, E-mail: rafaqat@kimia.fs.utm.my [IbnuSina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru, Johor DarulTa' zim (Malaysia)

2013-01-15

Surface reactivity in physiological fluid has been linked to bioactivity of a material. Past research has shown that bioactive glass containing zinc has the potential in bone regeneration field due to its enhanced bioactivity. However, results from literature are always contradictory. Therefore, in this study, surface reactivity of bioactive glass containing zinc was evaluated through the study of morphology and composition of apatite layer formed after immersion in simulated body fluid (SBF). Nano-sized bioactive glass with 5 and 10 mol% zinc were synthesized through quick alkali sol-gel method. The synthesized Zn-bioglass was characterized using field emission scanning electron microscope (FESEM), energy dispersive X-ray spectrometer (EDX), X-ray diffractometer (XRD) and Fourier transform infrared spectrometer (FTIR). Samples after SBF immersion were characterized using scanning electron microscope (SEM) and EDX. Morphological study through SEM showed the formation of spherical apatite particles with Ca/P ratio closer to 1.67 on the surface of 5 mol% Zn-bioglass. Whereas, the 10 mol% Zn-bioglass samples induced the formation of flake-like structure of calcite in addition to the spherical apatite particles with much higher Ca/P ratio. Our results suggest that the higher Zn content increases the bioactivity through the formation of bone-bonding calcite as well as the spherical apatite particles. -- Highlights: Black-Right-Pointing-Pointer Nano-sized bioactive glasses were synthesized through quick alkali sol-gel method. Black-Right-Pointing-Pointer 5 and 10 mol% Zn-bioglass induced the formation of spherical particles in SBF test. Black-Right-Pointing-Pointer 10 mol% Zn-bioglass also induced the formation of flake-like structure. Black-Right-Pointing-Pointer The flake-like structure is calcium carbonate; spherical particles are apatite. Black-Right-Pointing-Pointer High Zn contents negatively influence the chemical composition of the apatite layer.

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

Science.gov (United States)

Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

2015-01-01

In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Nano-structured calcite produced by micro-organisms in ancient and modern loess in Chinese Loess Plateau

Science.gov (United States)

Xu, H.; Chen, T.; Lu, H.; Wang, X.

2005-12-01

The results from transmission electron microscopy (TEM) and field emission gun scanning microscopy (FEG-SEM) investigation show that there are calcite nano-fibers (CNFs) formed during pedogenic process. The CNFs are widely distributed in the loess and red clay samples of Caoxian, Luochuan, Lingtai, Lantian, and Xifeng profiles as well as the samples of modern surface loess soils in Chinese Loess Plateau. Diameters of all the NFCs are about 40 nm, the length of the CNFs ranges from tens nanometer to several micrometers. Elongation direction of NFCs is unusual near parallel (105)* or (115)*. Crystals of NFCs arrange as bird net like and lattice-like frameworks. X-ray EDS spectra show the weak peaks of magnesium, phosphorous, and sulfur. Our investigation indicates that CNFs are in pore space of loess and paleosol and made up most of carbonate except for caliche nodular layers. Concentration of NFCs in the loess layers are significantly higher than those of paleosol layers because of leaching of carbonate in the paleosol forming environment (warn and wet paleoclimate). The "nanobacteria-like CNFs are well crystalline calcite single crystals with smoothes surfaces. The morphologies of CNFs are very unusual and different from the calcite single crystals observed in most geological environments. The CNFs are directly related to microbial activities in both ancient and modern loess. It is proposed that the intervention of organic compounds derived from microbial activities control the formation of the calcite nano-fibers. Both morphology and bulk composition of CNFs indicate that the formation of the CNFs involves bio-organics derived from microorganisms in loess deposit environment. Formation conditions of the calcite nano-fibers may information about paleoclimate, paleo-environment and paleoecology. So, the discovery of CNFs in loess-paloesol sequences can provide a new route for reconstruct paleoclimate by oxygen and carbon isotope from the CNFs.

UN2−x layer formed on uranium metal by glow plasma nitriding

International Nuclear Information System (INIS)

Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

2015-01-01

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed

Thermal formation of mesoporous single-crystal Co3O4 nano-needles and their lithium storage properties

KAUST Repository

Lou, Xiong Wen; Deng, Da; Lee, Jim Yang; Archer, Lynden A.

2008-01-01

In this work, we report the simple solid-state formation of mesoporous Co3O4 nano-needles with a 3D single-crystalline framework. The synthesis is based on controlled thermal oxidative decomposition and re-crystallization of precursor β-Co(OH)2 nano-needles. Importantly, after thermal treatment, the needle-like morphology can be completely preserved, despite the fact that there is a large volume contraction accompanying the process: β-Co(OH)2 → Co3O 4. Because of the intrinsic crystal contraction, a highly mesoporous structure with high specific surface area has been simultaneously created. The textual properties can be easily tailored by varying the annealing temperature between 200-400 °C. Interestingly, thermal re-crystallization at higher temperatures leads to the formation of a perfect 3D single-crystalline framework. Thus derived mesoporous Co3O4 nano-needles serve as a good model system for the study of lithium storage properties. The optimized sample manifests very low initial irreversible loss (21%), ultrahigh capacity, and excellent cycling performance. For example, a reversible capacity of 1079 mA h g-1 can be maintained after 50 cycles. The superior electrochemical performance and ease of synthesis may suggest their practical use in lithium-ion batteries. © The Royal Society of Chemistry 2008.

Comparative evaluation of hydroxyapatite and nano-bioglass in two forms of conventional micro- and nano-particles in repairing bone defects (an animal study).

Science.gov (United States)

Nosouhian, Saied; Razavi, Mohammad; Jafari-Pozve, Nasim; Rismanchian, Mansour

2015-01-01

Many synthetic bone materials have been introduced for repairing bone defects. The aim of this study is to comparatively evaluate the efficacy of nano-hydroxyapatite (HA) and nano-bioglass bone materials with their traditional micro counterparts in repairing bone defects. In this prospective animal study, four healthy dogs were included. First to fourth premolars were extracted in each quadrant and five cavities in each quadrant were created using trephine. Sixteen cavities in each dog were filled by HA, nano-HA, bioglass, and nano-bioglass and four defects were left as the control group. All defects were covered by a nonrestorable membrane. Dogs were sacrificed after 15, 30, 45, and 60 days sequentially. All 20 samples were extracted by trephine #8 with a sufficient amount of surrounding bone. All specimens were investigated under an optical microscope and the percentage of total regenerated bone, lamellar, and woven bone were evaluated. Data analysis was carried out by SPSS Software ver. 15 and Mann-Whitney U-test (α =0.05). After 15 days, the bone formation percentage showed a significant difference between HA and nano-HA and between HA and bioglass (P bone formation after 15 days. Nano-bioglass and bioglass and nano-HA and nano-bioglass groups represented a significant difference and nano-bioglass showed the highest rate of bone formation after 30 days (P = 0.01). After 45 days, the bone formation percentage showed a significant difference between nano-bioglass and bioglass and between nano-HA and nano-bioglass groups (P = 0.01). Nano-HA and nano-bioglass biomaterials showed promising results when compared to conventional micro-particles in the repair of bone defects.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

Science.gov (United States)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Oriented nano-wire formation and selective adhesion on substrates by single ion track reaction in polysilanes

International Nuclear Information System (INIS)

Shu Seki; Satoshi Tsukuda, Yoichi Yoshida; Seiichi Tagawa; Masaki Sugimoto; Shigeru Tanaka

2002-01-01

1-D nano-sized materials such as carbon nanotubes have attracted much attention as ideal quantum wires for future manufacturing techniques of nano-scaled opto-electronic devices. However it is still difficult to control the sizes, spatial distributions, or positions of nanotubes by conventional synthetic techniques to date. The MeV order heavy ion beams causes ultra-high density energy deposition which can not be realized by any other techniques (lasers, H, etc), and penetrate the polymer target straighforward as long as 1∼100 m depth. the energy deposited area produces non-homogeneous field can be controlled by changing the energy deposition rate of incident ions (LET: linear energy transfer, eV/nm). We found that cross-linking reaction of polysilane derivatives was predominantly caused and gave nano-gel in the chemical core, unlike main chain scission occurring at the outside of the area. high density energy deposition by ion beams causes non-homogeneous crosslinking reaction of polysilane derivatives within a nano-sized cylindrical area along an ion trajectory, and gives -SiC based nano-wires of which sizes (length, thickness) and number densities are completely under control by changing the parameters of incident ion beams and molecular sizes of target polymers. based on the concept pf the single track gelation, the present study demonstrates the formation of cross-linked polysilane nano-wires with the fairly controlled sizes. Recently the techniques of position-selective single ion hitting have been developed for MeV order ion beams, however it is not sufficient to control precisely the positions of the nano-wires on the substrates within sub- m area. in the present study, we report the selective adhesion of anno-wires on Si substrates by the surface treatments before coating, which enables the patterning of planted nano-wires on substrates and/or electrodes as candidates for nano-sized field emissive cathodes or electro-luminescent devices. Some examples of

Passive scalar transport in peripheral regions of random flows

International Nuclear Information System (INIS)

Chernykh, A.; Lebedev, V.

2011-01-01

We investigate statistical properties of the passive scalar mixing in random (turbulent) flows assuming its diffusion to be weak. Then at advanced stages of the passive scalar decay, its unmixed residue is primarily concentrated in a narrow diffusive layer near the wall and its transport to the bulk goes through the peripheral region (laminar sublayer of the flow). We conducted Lagrangian numerical simulations of the process for different space dimensions d and revealed structures responsible for the transport, which are passive scalar tongues pulled from the diffusive boundary layer to the bulk. We investigated statistical properties of the passive scalar and of the passive scalar integrated along the wall. Moments of both objects demonstrate scaling behavior outside the diffusive boundary layer. We propose an analytic scheme for the passive scalar statistics, explaining the features observed numerically.

Highly air stable passivation of graphene based field effect devices.

Science.gov (United States)

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

Nano-motion dynamics are determined by surface-tethered selectin mechanokinetics and bond formation.

Directory of Open Access Journals (Sweden)

Brian J Schmidt

2009-12-01

Full Text Available The interaction of proteins at cellular interfaces is critical for many biological processes, from intercellular signaling to cell adhesion. For example, the selectin family of adhesion receptors plays a critical role in trafficking during inflammation and immunosurveillance. Quantitative measurements of binding rates between surface-constrained proteins elicit insight into how molecular structural details and post-translational modifications contribute to function. However, nano-scale transport effects can obfuscate measurements in experimental assays. We constructed a biophysical simulation of the motion of a rigid microsphere coated with biomolecular adhesion receptors in shearing flow undergoing thermal motion. The simulation enabled in silico investigation of the effects of kinetic force dependence, molecular deformation, grouping adhesion receptors into clusters, surface-constrained bond formation, and nano-scale vertical transport on outputs that directly map to observable motions. Simulations recreated the jerky, discrete stop-and-go motions observed in P-selectin/PSGL-1 microbead assays with physiologic ligand densities. Motion statistics tied detailed simulated motion data to experimentally reported quantities. New deductions about biomolecular function for P-selectin/PSGL-1 interactions were made. Distributing adhesive forces among P-selectin/PSGL-1 molecules closely grouped in clusters was necessary to achieve bond lifetimes observed in microbead assays. Initial, capturing bond formation effectively occurred across the entire molecular contour length. However, subsequent rebinding events were enhanced by the reduced separation distance following the initial capture. The result demonstrates that vertical transport can contribute to an enhancement in the apparent bond formation rate. A detailed analysis of in silico motions prompted the proposition of wobble autocorrelation as an indicator of two-dimensional function. Insight into two

Influence of passivation process on chip performance

NARCIS (Netherlands)

Lu, J.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

2009-01-01

In this work, we have studied the performance of CMOS chips before and after a low temperature post-processing step. In order to prevent damage to the IC chips by the post-processing steps, a first passivation layers is needed on top of the IC chips. Two different passivation layer deposition

Characterization of LPD-TiO2 compact layer in ZnO nano-rods photoelectrode for dye-sensitized solar cell

Science.gov (United States)

Huang, Jung-Jie; Wu, Chih-Kan; Hsu, Chun-Fa

2017-12-01

A titanium oxide (TiO2) compact layer was used to enhance the performance of a dye-sensitized solar cell (DSSC) by reducing the electrical loss from recombination at the indium tin oxide (ITO)/electrolyte interface and by improving the electrical contact between ITO and the zinc oxide (ZnO) nano-rod photoelectrode. The TiO2 compact layer was deposited on ITO glass using the liquid phase deposition (LPD) method. DSSCs fabricated with and without the LPD-TiO2 compact layer were compared. In addition, various thicknesses of the LPD-TiO2 compact layer were evaluated. The light-to-electricity conversion efficiency of the DSSC increased from 0.43 to 0.75% by incorporating the LPD-TiO2 compact layer. Experimental results demonstrated that the LPD method is a promising alternative to the conventional TiO2 compact layer technology for the production of high-performance DSSCs.

Carbon nanotubes: from nano test tube to nano-reactor.

Science.gov (United States)

Khlobystov, Andrei N

2011-12-27

Confinement of molecules and atoms inside carbon nanotubes provides a powerful strategy for studying structures and chemical properties of individual molecules at the nanoscale. In this issue of ACS Nano, Allen et al. explore the nanotube as a template leading to the formation of unusual supramolecular and covalent structures. The potential of carbon nanotubes as reactors for synthesis on the nano- and macroscales is discussed in light of recent studies.

Passive Corrosion Behavior of Alloy 22

International Nuclear Information System (INIS)

R.B. Rebak; J.H. Payer

2006-01-01

Alloy 22 (NO6022) was designed to stand the most aggressive industrial applications, including both reducing and oxidizing acids. Even in the most aggressive environments, if the temperature is lower than 150 F (66 C) Alloy 22 would remain in the passive state having particularly low corrosion rates. In multi-ionic solutions that may simulate the behavior of concentrated ground water, even at near boiling temperatures, the corrosion rate of Alloy 22 is only a few nano-meters per year because the alloy is in the complete passive state. The corrosion rate of passive Alloy 22 decreases as the time increases. Immersion corrosion testing also show that the newer generation of Ni-Cr-Mo alloys may offer a better corrosion resistance than Alloy 22 only in some highly aggressive conditions such as in hot acids

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

Science.gov (United States)

Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

2014-01-07

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

Evaluation of advanced hot conditioning process for PHWRS

International Nuclear Information System (INIS)

Chandramohan, P.; Srinivasan, M.P.; Velmurugan, S.

2015-01-01

Hot-conditioning/hot functional test process is carried out to the PHT system of reactor before reactor going to critical/operational. The process is aimed in checking the component functionalities at high temperature and high pressure conditions, the process also checks/removes the suspended corrosion products in heat transport circuit. This process leads to formation of a passive or corrosion oxide film on the heat transport circuit surfaces which protects/mitigates the corrosion of the system circuits during the operation of plant. Major concerned alloy in the Primary Heat Transport (PHT) system of Indian PHWRs during the hot conditioning process and also during operation is the carbon steel due to its high corrosion. Hot-conditioning process mitigates the corrosion of carbon steel by the formation of iron oxide (Fe 3 O 4 ) as major oxide phase layer on the carbon steel surface with a typical thickness of 1.0 μm with particle size of 1μm after 336 h of process at 250 °C. But this passive oxide film thickness increase with time of operation of system with c.a. 10μm for 2.2 EFYP. The protectiveness of passive layer can be further enhanced by reducing the particle sizes in the passive film to nano meter range. The process can impact on the compactness of passive oxide layer with reduced pores in the oxide layer and properties of the nano nature oxide (transport properties) impacting the corrosion mitigation. The corrosion mitigation reduce the source term in the activated corrosion product generation. To achieve this a new process 'Advanced hot conditioning' was developed in water steam chemistry division, BARC for getting a passive oxide film with a lowered particle size in the passive film. The AHC process with 1g/L of PEG-8000 at 250 °C for 336 h showed a particle size <100 nm. The process was tested under the normal operating conditions as function of the time, the corrosion parameter like oxide film thickness, corrosion rate and metal ion

Facile and large-scale synthesis of high quality few-layered graphene nano-platelets via methane decomposition over unsupported iron family catalysts

Energy Technology Data Exchange (ETDEWEB)

Awadallah, Ahmed E., E-mail: ahmedelsayed_epri@yahoo.com [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Aboul-Enein, Ateyya A. [Process Development Division, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Kandil, Usama F. [Petroleum Application Department, Egyptian Petroleum Research Institute, 11727 Cairo (Egypt); Taha, Mahmoud Reda [Department of Civil Engineering, University of New Mexico, Albuquerque, NM 87131 (United States)

2017-04-15

High quality few-layered graphene nano-platelets (GNPs) were successfully prepared via catalytic chemical vapor deposition of methane under ambient pressure using substrate-free unsupported iron, cobalt, and nickel metallic sheets as catalysts. The bulk catalysts were prepared via combustion method using citric acid as a fuel. Various analytical techniques, including high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD), thermogravimetric analysis (TGA), temperature programmed reduction (TPR) and Raman spectroscopy were employed to characterize the fresh and reduced catalysts and to identify the morphological structure of the as-grown GNPs. TEM images of the reduced metal catalysts showed that polycrystalline metallic sheets were easily produced after complete reduction of unsupported metal oxides. The data demonstrated that the formation of zero-valent metallic sheets could effectively promote the growth of GNPs on their surfaces. The unsupported Ni catalyst exhibits higher catalytic growth activity in terms of GNPs yield (254 wt%) compared with all other catalysts. Raman spectra and TEM results established that a few layers of GNPs with high crystallinity and good graphitization were produced. TGA results further demonstrated that the as-grown GNPs exhibit significantly higher thermal stability in air atmosphere compared with other synthesis methods. - Highlights: • Few-layered graphene nanoplatelets were prepared via methane catalytic decomposition. • Metallic sheets of iron group metals were used as novel catalysts. • The surfaces of metallic sheets were found to be very effective for GNPs growth. • The number of layers is dependent on the morphological structure of the catalysts. • The unsupported metallic Ni catalyst exhibited higher catalytic growth activity.

Comparison of dust-layer heights from active and passive satellite sensors

Science.gov (United States)

Kylling, Arve; Vandenbussche, Sophie; Capelle, Virginie; Cuesta, Juan; Klüser, Lars; Lelli, Luca; Popp, Thomas; Stebel, Kerstin; Veefkind, Pepijn

2018-05-01

Aerosol-layer height is essential for understanding the impact of aerosols on the climate system. As part of the European Space Agency Aerosol_cci project, aerosol-layer height as derived from passive thermal and solar satellite sensors measurements have been compared with aerosol-layer heights estimated from CALIOP measurements. The Aerosol_cci project targeted dust-type aerosol for this study. This ensures relatively unambiguous aerosol identification by the CALIOP processing chain. Dust-layer height was estimated from thermal IASI measurements using four different algorithms (from BIRA-IASB, DLR, LMD, LISA) and from solar GOME-2 (KNMI) and SCIAMACHY (IUP) measurements. Due to differences in overpass time of the various satellites, a trajectory model was used to move the CALIOP-derived dust heights in space and time to the IASI, GOME-2 and SCIAMACHY dust height pixels. It is not possible to construct a unique dust-layer height from the CALIOP data. Thus two CALIOP-derived layer heights were used: the cumulative extinction height defined as the height where the CALIOP extinction column is half of the total extinction column, and the geometric mean height, which is defined as the geometrical mean of the top and bottom heights of the dust layer. In statistical average over all IASI data there is a general tendency to a positive bias of 0.5-0.8 km against CALIOP extinction-weighted height for three of the four algorithms assessed, while the fourth algorithm has almost no bias. When comparing geometric mean height there is a shift of -0.5 km for all algorithms (getting close to zero for the three algorithms and turning negative for the fourth). The standard deviation of all algorithms is quite similar and ranges between 1.0 and 1.3 km. When looking at different conditions (day, night, land, ocean), there is more detail in variabilities (e.g. all algorithms overestimate more at night than during the day). For the solar sensors it is found that on average SCIAMACHY data

Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

KAUST Repository

Ahmed, Bilal; Shahid, Muhammad; Nagaraju, Doddahalli H.; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

KAUST Repository

Ahmed, Bilal

2015-06-03

We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

A parameterization of the passive layer of a quasigeostrophic flow in a continuously-stratified ocean

Science.gov (United States)

Benilov, E. S.

2018-05-01

This paper examines quasigeostrophic flows in an ocean that can be subdivided into an upper active layer (AL) and a lower passive layer (PL), with the flow and density stratification mainly confined to the former. Under this assumption, an asymptotic model is derived parameterizing the effect of the PL on the AL. The model depends only on the PL's depth, whereas its Väisälä-Brunt frequency turns out to be unimportant (as long as it is small). Under an additional assumption-that the potential vorticity field in the PL is well-diffused and, thus, uniform-the derived model reduces to a simple boundary condition. This condition is to be applied at the AL/PL interface, after which the PL can be excluded from consideration.

Replication of micro and nano-features on iPP by injection molding with fast cavity surface temperature evolution

DEFF Research Database (Denmark)

Speranzaa, Vito; Liparotia, Sara; Calaon, Matteo

2017-01-01

The production of polymeric components with functional structures in the micrometer and sub-micrometer range is a complex challenge for the injection molding process, since it suffers the use of low cavity surface temperatures that induce the fast formation of a frozen layer, thus preventing...... was sufficient to obtain accurate replication, with adequate surface temperatures. In the case of nano-features, the replication accuracy was affected by the morphology developed on the molding surface, that is aligned along the flow direction with dimensions comparable with the dimension of the nano...

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

Science.gov (United States)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-02

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

Energy Technology Data Exchange (ETDEWEB)

Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

2015-01-25

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.

Water Transfer Characteristics during Methane Hydrate Formation Processes in Layered Media

Directory of Open Access Journals (Sweden)

Yousheng Deng

2011-08-01

Full Text Available Gas hydrate formation processes in porous media are always accompanied by water transfer. To study the transfer characteristics comprehensively, two kinds of layered media consisting of coarse sand and loess were used to form methane hydrate in them. An apparatus with three PF-meter sensors detecting water content and temperature changes in media during the formation processes was applied to study the water transfer characteristics. It was experimentally observed that the hydrate formation configurations in different layered media were similar; however, the water transfer characteristics and water conversion ratios were different.

Wetting and layering transitions in a nano-dendrimer PAMAM structure: Monte Carlo study

Science.gov (United States)

Aouini, S.; Ziti, S.; Labrim, H.; Bahmad, L.

2016-10-01

This study is based on a nano-model of the dendrimer polyamidoamine (PAMAM). The idea is to examine the magnetic properties of such models in the context of wetting and the layering transitions. The studied system consists of spins σ ={1/2} Ising ferromagnetic in real nanostructure found in different scientific domains. To study this system, we perform Monte Carlo simulations leading to interesting results recapitulated in two classes. The former is the ground state phase diagrams study. The latter is the magnetic properties at non null temperatures. Also, we analyzed the effect of the terms present in the Hamiltonian governing our system such as the external magnetic field and the exchange couplings interactions.

Design and Fabrication of Carbon Nano tube for Medical Application

International Nuclear Information System (INIS)

Azniza Abas; Nuzaihan, M.N.; Hafiza, N.; Nazwa, T.

2011-01-01

Carbon nano tubes or known as CNTs are allotropes of carbon with a cylindrical nano structure. They exhibit extraordinary strength and unique electrical properties, and are efficient thermal conductors [1]. Due to its ordinary properties this research will based on BIOSENSOR device. Normally these CNTs biosensor are based on an enzyme catalyzed reaction that will produce either electrons or protons. In particular, it is useful in genetic profiling of human diseases, which includes in identifying genes that are expressed in certain diseases such as cancer [2]. This research will based on design and fabricate sensor or device using carbon nano tube and integrate carbon nano tube (CNTs) onto wafer using combination of dichlorophosphate and nano manipulation. Carbon nano tubes device mask are design using AUTOCAD software; there is four mask involved, first mask is Gate Formation,second mask is insulation layer third mask is source and drain and final mask forth mask is used as test channel. For fabrication and optimization of biosensor using carbon nano tube CNT that will be involve both microfabrication and nano fabrication. This process will involve conventional photolithography process, electron beam evaporator, thermal oxidation and wet etching process. To inspect and characterize carbon nano tube electrical properties it will involve tools such as SEM, AFM, Dielectric Analyzer, IV-CV and Semiconductor Parametric Analyzer system. This inspection is very important to produce a perfect profile to produce a good biosensor based on carbon nano tube structure. Preparation of various samples for testing functionality of the device this various samples and conditions will be done to ensure the detection is precise. Conductivity and capacitance effect will be tested electrically to detect the hybridization of the sample. (author)

Effect of nano-additives on microstructure, mechanical properties and wear behaviour of Fe–Cr–B hardfacing alloy

International Nuclear Information System (INIS)

Gou, Junfeng; Lu, Pengpeng; Wang, You; Liu, Saiyue; Zou, Zhiwei

2016-01-01

Graphical abstract: Wear rate of the hardfacing layers with different nano-additives content and the counterpart GCr15 steel balls under conditions: normal load = 15 N, rotating speed = 400 rpm, total sliding time = 20 min. - Highlights: • Nano-additives remarkably improved the microstructure of hardfacing layers. • The hardness of hardfacing layers increased linearly with the increase of nano-additives. • The wear rate of the hardfacing layer with 0.65 wt.% nano-additives decreased about 88% than that of the hardfacing layer without nano-additives. • According to observation of wear tracks of hardfacing layers, the main wear mechanism was adhesion wear. - Abstract: Fe–Cr–B hardfacing alloys with different nano-additives content were investigated. The effects of nano-additives on the microstructures of hardfacing alloy were studied by using optical microscope, scanning electron microscope, X-ray diffractometer. The hardness and the fracture toughness of hardfacing alloys were measured, respectively. The sliding wear tests were carried out using a ball-on-disc tribometer. The experimental results showed that primary carbide of hardfacing alloys was refined and its distribution became uniform with content of nano-additives increased. The hardfacing alloys are composed of Cr_7C_3, Fe_7C_3, α-Fe and Fe_2B according to the results of X-ray diffraction. The hardness of hardfacing alloys increased linearly with the increase of nano-additives. The hardness of the hardfacing alloy with 1.5 wt.% nano-additives increased 54.8% than that of the hardfacing alloy without nano-additives and reached to 1011HV. The K_I_C of the hardfacing alloy with 0.65 wt.% nano-additives was 15.4 MPam"1"/"2, which reached a maximum. The value increased 57.1% than that of the hardfacing alloy without nano-additives. The wear rates of the hardfacing layer with 0.65 wt.% and 1.0 wt.% nano-additives decreased about 88% than that of the hardfacing layer without nano-additives. The main

High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

International Nuclear Information System (INIS)

Xue Bai-Qing; Wang Sheng-Kai; Han Le; Chang Hu-Dong; Sun Bing; Zhao Wei; Liu Hong-Gang

2013-01-01

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm 2 /V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal—oxide—semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH 4 ) 2 S-passivated samples. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Chemical properties of various organic electrolytes for lithium rechargeable batteries. Pt. 1.. Characterization of passivating layer formed on graphite in alkyl carbonate solutions

Energy Technology Data Exchange (ETDEWEB)

Mori, Shoichiro; Asahina, Hitoshi; Suzuki, Hitoshi; Yonei, Ayako; Yokoto, Kiyomi [Tsukuba Research Center, Mitsubishi Chemical Corporation, Ibaraki (Japan)

1997-09-01

The characteristics and reaction mechanisms of the passivating film formed on the surface of graphite were investigated in ethylene carbonate-diethyl carbonate solutions containing LiClO{sub 4}, LiPF{sub 6} and LiN(SO{sub 2}CF{sub 3}){sub 2}. The electron consumption resulting on the irreversible capacity of graphite was almost equivalent to that used in the one-electron reduction of Li{sup +} found in the film. The electrochemical reactions in the first discharge process may be divided into the following steps: (i) `initial film formation step` from 1.4 to 0.55 V; (ii) `main film formation step` from 0.55 to 0.2 V, and (iii) `lithium intercalation step from 0.2 to 0.0 V. Most of the passivating film is formed together with the lithium intercalation reaction at step (ii). The passivating film formed at this step contained a significant amount of organic film such as EtOCO{sub 2}Li, (CH{sub 2}OCO{sub 2}Li){sub 2}, etc. Through the consecutive formation of passivating film at steps (i) and (ii), lithium intercalation into graphite proceeds smoothly without further decomposition of organic electrolyte. (orig.)

Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

Energy Technology Data Exchange (ETDEWEB)

Einsele, Florian

2010-02-05

Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the