THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

Directory of Open Access Journals (Sweden)

Mustafa TEMİZ

1996-02-01

Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

Directory of Open Access Journals (Sweden)

P. Chen

2017-03-01

Full Text Available The hole distribution and electroluminescence property improvement by adjusting the relative position between quantum wells and p-doped region in InGaN/GaN multiple-quantum-well structures are experimentally and theoretically investigated. Five designed samples with different barrier layer parameters of multiple-quantum-well structure are grown by MOCVD and then fabricated into devices. The electroluminescence properties of these samples are measured and compared. It is found that the output electroluminescence intensity of samples is enhanced if the position of quantum wells shifts towards p-side, while the output power is reduced if their position is shifted towards the n-side. The theoretical calculation of characteristics of these devices using the simulation program APSYS agrees well with the experimental data, illustrating that the effect of relative position between p-doped region and quantum wells on the improvement of hole distribution and electroluminescence performance is significant, especially for InGaN/GaN multiple-quantum-well devices operated under high injection condition.

Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

Science.gov (United States)

Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

2018-01-01

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

International Nuclear Information System (INIS)

Davies, M. J.; Hammersley, S.; Dawson, P.; Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

2016-01-01

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-02-07

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

Faraday rotation in multiple quantum wells of GaAs/AlGaAs

International Nuclear Information System (INIS)

Dudziak, E.; Bozym, J.; Prochnik, D.; Wasilewski, Z.R.

1996-01-01

We report on the results of first measurements on the Faraday rotation of modulated n-doped multiple quantum wells of GaAs/Al x Ga 1-x As (x = 0.312). The measurements have been performed in the magnetic fields up to 13 T at the temperature of 2 K, in the spectral region of interband transitions. A rich structure of magneto-excitons has been found in the measured spectra. Faraday rotation (phase) measurements are proposed as an alternative method to the photoluminescence excitation for investigations of magneto-excitons in quantum wells. The dependence of measured Faraday rotation on magnetic field and hypothetical connections with quantum Hall effect are also discussed. (author)

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Energy Technology Data Exchange (ETDEWEB)

Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

International Nuclear Information System (INIS)

Hammersley, S.; Dawson, P.; Kappers, M. J.; Massabuau, F. C.-P.; Sahonta, S.-L.; Oliver, R. A.; Humphreys, C. J.

2015-01-01

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nm and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

DEFF Research Database (Denmark)

Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

1995-01-01

The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

Optical properties of the semiconductor quantum structure

International Nuclear Information System (INIS)

Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

2004-01-01

Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Bergbauer, Werner [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); FH Deggendorf (Germany); Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); Benstetter, Guenther [FH Deggendorf (Germany)

2008-07-01

As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift.

Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

International Nuclear Information System (INIS)

Bergbauer, Werner; Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold; Benstetter, Guenther

2008-01-01

As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift

Study of electro-optic effect in asymmetrically ramped AlInGaAs multiple quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Sadiq, Muhammad Usman; Peters, Frank H.; Corbett, Brian [Tyndall National Institute, Lee Maltings, Cork (Ireland); Department of Physics, University College Cork, Cork (Ireland); O' Callaghan, James; Roycroft, Brendan; Thomas, Kevin; Pelucchi, Emanuele [Tyndall National Institute, Lee Maltings, Cork (Ireland)

2016-04-15

We investigate the electro-optic properties of two oppositely ramped asymmetric quantum well structures in the AlInGaAs material system. The grading of the bandgap in the quantum wells has been achieved by changing the ratio of Al to Ga in the quaternary alloy during the epitaxial growth. The surface normal photo-response and the Fabry-Perot fringe shift in straight waveguides are compared for both structures as a function of applied voltage at 1550 nm for TE-polarized light. The measurements show a change in the refractive index due to a red shift of the excitonic resonances due to the quantum-confined Stark effect. The 10 quantum well structure with a ramp up of the bandgap in the growth direction leads to the figure of merit of the voltage for a π phase shift, V{sub π} by length, L, V{sub π} x L, of 6 as compared to 7 V . mm in the structure with a ramp in opposite direction. Further investigations show that the reduction in V{sub π} is due to increased absorption at high reverse bias which induces a non-linear phase change. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Strain-balanced InGaN/GaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2014-07-21

InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1−x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1−y}N templates for x > y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1−x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1−y}N template. Growth of the In{sub y}Ga{sub 1−y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1−y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1−x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1−y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

International Nuclear Information System (INIS)

Tomiya, S.; Goto, O.; Hoshina, Y.; Tanaka, T.; Ikeda, M.

2006-01-01

A new type of structural defects was observed in GaInN multiple quantum well structures with higher In concentrations that were grown on low-threading-dislocation-density templates. The defects were investigated by using various kinds of transmission electron microscopy techniques, and were found to consist of planar defects and associated dislocations. The planar defects nucleate at the interfaces between the quantum well layers and barrier layers. The dislocations are created at the edge boundary of the planar defects and run almost along the c-axis towards the epi-surface. The planar defects are revealed to be inversion domains which are thought to be caused by the segregation of excess In-In bonds at the interface between the quantum well layer and the barrier layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

Energy Technology Data Exchange (ETDEWEB)

Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan); Goto, O.; Hoshina, Y.; Tanaka, T.; Ikeda, M. [Shiroishi Laser Center, Semiconductor Laser Division, MSNC, Sony Corporation, Miyagi (Japan)

2006-06-15

A new type of structural defects was observed in GaInN multiple quantum well structures with higher In concentrations that were grown on low-threading-dislocation-density templates. The defects were investigated by using various kinds of transmission electron microscopy techniques, and were found to consist of planar defects and associated dislocations. The planar defects nucleate at the interfaces between the quantum well layers and barrier layers. The dislocations are created at the edge boundary of the planar defects and run almost along the c-axis towards the epi-surface. The planar defects are revealed to be inversion domains which are thought to be caused by the segregation of excess In-In bonds at the interface between the quantum well layer and the barrier layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

International Nuclear Information System (INIS)

Deng, Zhen; Li, Zishen; Jiang, Yang; Ma, Ziguang; Fang, Yutao; Li, Yangfeng; Wang, Wenxin; Jia, Haiqiang; Chen, Hong

2015-01-01

In this work, a novel hybrid graphene/InGaN-based multiple quantum wells (MQWs) structure has been fabricated. Compared to the sample conventional structure (CS), the utilization of graphene transferred on top GaN layer significantly enhances the internal quantum efficiency and relatively photoluminescence intensity. Furthermore, the excitons in the MQWs of sample hybrid structure (HS) have a shorter decay lifetime of 3.4 ns than that of 6.7 ns for sample CS. These results are probably attributed to the free carriers in the graphene layer, which can screen the piezoelectric field in the active region and thus present a free quantum-confined Stark effect-like behavior. Our work demonstrates that the graphene on the top GaN layer can effectively increase the recombination rate in sample HS, which may further improve LEDs' performance. (orig.)

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

Science.gov (United States)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Piezo-Phototronic Effect in a Quantum Well Structure.

Science.gov (United States)

Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

2016-05-24

With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

Controlled release of stored pulses in a double-quantum-well structure

International Nuclear Information System (INIS)

Carreno, F; Anton, M A

2009-01-01

We show that an asymmetric double-quantum-well structure can operate as an optical memory. The double quantum wells are modelled like an atomic ensemble of four-level atoms in the Λ-V-type configuration with vacuum-induced coherence arising from resonant tunnelling through the ultra-thin potential energy barrier between the wells. A weak quantum field connects the ground level with the two upper levels and an auxiliary classical control field connects the intermediate level with the upper levels. The quantum field can be mapped into two channels. One channel results from the adiabatic change of the control field which maps the incoming quantum field into the coherence of the two lower levels like in a Λ-type atomic ensemble. The other channel results from the mapping of the quantum field into a combination of coherences between the two upper levels and the ground level, and it is allowed by the adiabatic change of the upper level splitting via an external voltage. The possibility of releasing multiple pulses from the medium resulting from the existence of a non-evolving component of the two-channel memory is shown. A physical picture has been developed providing an explanation of the performance of the device.

Direct observation of free-exciton thermalization in quantum-well structures

DEFF Research Database (Denmark)

Umlauff, M.; Hoffmann, J.; Kalt, H.

1998-01-01

We report on a direct observation of free-exciton thermalization in quantum-well structures. A narrow energy distribution of free 1s excitons is created in ZnSe-based quantum wells by emission of one LO phonon after optical excitation of the continuum stales with picosecond laser pulses. The subs......We report on a direct observation of free-exciton thermalization in quantum-well structures. A narrow energy distribution of free 1s excitons is created in ZnSe-based quantum wells by emission of one LO phonon after optical excitation of the continuum stales with picosecond laser pulses...

Cathodoluminescence studies of chevron features in semi-polar (11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

Science.gov (United States)

Brasser, C.; Bruckbauer, J.; Gong, Y.; Jiu, L.; Bai, J.; Warzecha, M.; Edwards, P. R.; Wang, T.; Martin, R. W.

2018-05-01

Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices.

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

International Nuclear Information System (INIS)

Khalil, H.M.; Mazzucato, S.; Ardali, S.; Celik, O.; Mutlu, S.; Royall, B.; Tiras, E.; Balkan, N.; Puustinen, J.; Korpijärvi, V.-M.; Guina, M.

2012-01-01

Highlights: ► We studied p-i-n GaInNAs MQW devices as function of temperature and magnetic field. ► Observed oscillations in the sample current–voltage curves at low temperature. ► Shift in oscillation position with magnetic field described by Landau level split. ► Resonant tunnelling and thermionic emission used to describe oscillations. - Abstract: The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current–voltage I–V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I–V and at temperatures above T = 200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission. Magnetic fields up to B = 11 T were applied parallel to the planes of the QWs. A small voltage shift in the position of the oscillations was observed, proportional to the magnetic field intensity and dependent upon the temperature. Calculation of the Landau level energy separation (16 meV) agrees with the observed experimental data. Magneto-tunnelling spectroscopy probes in detail the nature of band- or impurity-like states responsible for resonances in first and second subbands, observing the I–V plot in dark condition and under illumination. The field-dependence of the amplitude of the oscillation peaks in I–V has the characteristic form of a quantum mechanical admixing effect. This enhancement is also probably due to the hole recombination with majority electrons tunnelling in the N-related states of the quantum wells.

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Energy Technology Data Exchange (ETDEWEB)

Khalil, H.M., E-mail: hkhalia@essex.ac.uk [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Mazzucato, S. [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Ardali, S.; Celik, O.; Mutlu, S. [Anadolu University, Faculty of Science, Department of Physics, Yunus Emre Campus 26470, Eskisehir (Turkey); Royall, B. [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Tiras, E. [Anadolu University, Faculty of Science, Department of Physics, Yunus Emre Campus 26470, Eskisehir (Turkey); Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ, Colchester (United Kingdom); Puustinen, J.; Korpijaervi, V.-M.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 10, FI-33720 Tampere (Finland)

2012-06-05

Highlights: Black-Right-Pointing-Pointer We studied p-i-n GaInNAs MQW devices as function of temperature and magnetic field. Black-Right-Pointing-Pointer Observed oscillations in the sample current-voltage curves at low temperature. Black-Right-Pointing-Pointer Shift in oscillation position with magnetic field described by Landau level split. Black-Right-Pointing-Pointer Resonant tunnelling and thermionic emission used to describe oscillations. - Abstract: The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current-voltage I-V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I-V and at temperatures above T = 200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission. Magnetic fields up to B = 11 T were applied parallel to the planes of the QWs. A small voltage shift in the position of the oscillations was observed, proportional to the magnetic field intensity and dependent upon the temperature. Calculation of the Landau level energy separation (16 meV) agrees with the observed experimental data. Magneto-tunnelling spectroscopy probes in detail the nature of band- or impurity-like states responsible for resonances in first and second subbands, observing the I-V plot in dark condition and under illumination. The field-dependence of the amplitude of the oscillation peaks in I-V has the characteristic form of a quantum mechanical admixing effect. This enhancement is also probably due to the hole recombination with majority electrons tunnelling in the N-related states of the quantum wells.

Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

International Nuclear Information System (INIS)

Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R; Gunnaes, A E

2008-01-01

A study of the photoluminescence from a four-period Cd x Hg 1-x Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm 2 . When the excitation density was increased from 1.3 to 23.4 W/cm 2 , the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV

Exciton polaritons and their one-dimensional localization in disordered structure with quantum wells

International Nuclear Information System (INIS)

Kosobukin, V.A.

2003-01-01

The Anderson light localization theory by disordered ultrathin layers (quantum wells), uniform in lateral directions and featuring intrinsic optical resonances, is presented. A model of the layers with delta-function resonance dielectric polarization is suggested for solution of the multiple scattering problem. Allowance made for interlayer disorder, one- and two-phoron characteristics of electromagnetic transfer, i.e. average energy density and the length of the Anderson light localization were calculated in analytical form. It is shown that in disordered structure average electromagnetic field is propagated as polaritons formed due to excessive emission of excitons between the quantum wells [ru

Quantum-well exciton polariton emission from multi-quantum-well wire structures

Science.gov (United States)

Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

Capacitance-voltage characteristics of quantum well structures

CERN Document Server

Moon, C R; Choe, B D

1999-01-01

The characteristics of the apparent carrier distribution (ACD) of quantum well (QW) structures are investigated using the self-consistent simulation and the capacitance-voltage (C-V) profiling techniques. The simulation results on the differential carrier distribution show that the change of position expectation value of two-dimensional electrons determines the full width at half maximum of 100 K ACD peaks when conduction band offset is DELTA E sub c = 160 meV and the QW width t sub w is greater than 120 A. The contribution of Debye averaging effects to the ACD peaks becomes important as t sub w and DELTA E sub c values decrease and the temperature is increased. The influence of Debye averaging effects on ACD peaks appears differently according to the location of each well in multiple QWs. These results indicate that the extraction of QW parameters from the C-V profile should be done with caution.

Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

International Nuclear Information System (INIS)

Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

2007-01-01

The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

Efficiency studies on semipolar GaInN-GaN quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim [Institute of Optoelectronics, Ulm University (Germany)

2016-12-15

In order to clarify the reasons for the fairly poor electroluminescence (EL) performance of semipolar LED structures grown on patterned sapphire wafers, we have analyzed both, pure photoluminescence (PL) test structures without doping only containing 5 GaInN quantum wells and full EL test structures, all emitting at a wavelength of about 510 nm. Evaluating the PL intensity over a wide range of temperatures and excitation powers, we conclude that such quantum wells possess a fairly large internal quantum efficiency of about 20%. However, on EL test structures containing nominally the same quantum wells, we obtained an optical output power of only about 150μW at an applied current of 20 mA. This may be due partly to some thermal destruction of the quantum wells by the overgrowth with p-GaN. Even more important seems to be the not yet finally optimized p-doping of these structures. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

International Nuclear Information System (INIS)

Xia, Y.; Vinter, B.; Chauveau, J.-M.; Brault, J.; Nemoz, M.; Teisseire, M.; Leroux, M.

2011-01-01

Nonpolar (1120) Al 0.2 Ga 0.8 N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (1120) Zn 0.74 Mg 0.26 O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

Frequency up-conversion in nonpolar a-plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Radosavljević, S.; Radovanović, J., E-mail: radovanovic@etf.bg.ac.rs; Milanović, V. [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11200 Belgrade (Serbia); Tomić, S. [Joule Physics Laboratory, School of Computing, Science and Engineering, University of Salford, Manchester M5 4WT (United Kingdom)

2014-07-21

We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies.

Computer studies of multiple-quantum spin dynamics

Energy Technology Data Exchange (ETDEWEB)

Murdoch, J.B.

1982-11-01

The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment.

Computer studies of multiple-quantum spin dynamics

International Nuclear Information System (INIS)

Murdoch, J.B.

1982-11-01

The excitation and detection of multiple-quantum (MQ) transitions in Fourier transform NMR spectroscopy is an interesting problem in the quantum mechanical dynamics of spin systems as well as an important new technique for investigation of molecular structure. In particular, multiple-quantum spectroscopy can be used to simplify overly complex spectra or to separate the various interactions between a nucleus and its environment. The emphasis of this work is on computer simulation of spin-system evolution to better relate theory and experiment

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

KAUST Repository

Browne, David A.

2015-05-14

© 2015 AIP Publishing LLC. Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

Ferroelectric tunnel junctions with multi-quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

2014-06-02

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Efficiency dip observed with InGaN-based multiple quantum well solar cells

KAUST Repository

Lai, Kunyu; Lin, G. J.; Wu, Yuhrenn; Tsai, Menglun; He, Jr-Hau

2014-01-01

The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

Tailoring the spin polarization in Ge/SiGe multiple quantum wells

International Nuclear Information System (INIS)

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

2013-01-01

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

2012-01-15

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

International Nuclear Information System (INIS)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

2012-01-01

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

DEFF Research Database (Denmark)

Porte, Henrik; Turchinovich, Dmitry; Cooke, David

We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers....

Spin-related transport phenomena in HgTe-based quantum well structures

International Nuclear Information System (INIS)

Koenig, Markus

2007-12-01

Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg 0.3 Cd 0.7 Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)

Spin-related transport phenomena in HgTe-based quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Koenig, Markus

2007-12-15

Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg{sub 0.3}Cd{sub 0.7}Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)

Luminescence and ultrafast phenomena in InGaN multiple quantum wells

International Nuclear Information System (INIS)

Viswanath, Annamraju Kasi; Lee, J.I.; Kim, S.T.; Yang, G.M.; Lee, H.J.; Kim, Dongho

2007-01-01

High quality In 0.13 Ga 0.87 N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 A, and the barrier thickness is 50 A. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a wide temperature range from 10 to 290 K. In the luminescence spectrum at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full width at half maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied and the peak positions and the intensities of the different peaks were obtained. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. From the measurements of luminescence intensities and lifetimes at various temperatures, radiative and non-radiative recombination lifetimes were deduced. The results were explained by considering only the localization of the excitons due to potential fluctuations

Strong quantum-confined stark effect in germanium quantum-well structures on silicon

International Nuclear Information System (INIS)

Kuo, Y.; Lee, Y. K.; Gei, Y.; Ren, S; Roth, J. E.; Miller, D. A.; Harris, J. S.

2006-01-01

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such component with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimeters) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger Quantum-Confined Stark Effect (QCSE) mechanism, which allows modulator structures with only micrometers of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor, such semiconductors often display much weak optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture. (author)

Quantum-Well Thermophotovoltaic Cells

Science.gov (United States)

Freudlich, Alex; Ignatiev, Alex

2009-01-01

Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.

Excitation density dependence of the photoluminescence from Cd{sub x}Hg{sub 1-x}Te multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R [Norwegian Defence Research Establishment, PO Box 25, N-2027 Kjeller (Norway); Gunnaes, A E [Department of Physics, University of Oslo, Boks 1048 Blindern, N-0316 Oslo (Norway)], E-mail: celin.tonheim@ffi.no

2008-03-15

A study of the photoluminescence from a four-period Cd{sub x}Hg{sub 1-x}Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm{sup 2}. When the excitation density was increased from 1.3 to 23.4 W/cm{sup 2}, the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV.

Effect of barrier height and indium composition on the internal quantum efficiency of (In)AlGaN multiple quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ledentsov, Nikolay Jr.; Reich, Christoph; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Kolbe, Tim; Lobo Ploch, Neysha; Rass, Jens [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Kueller, Viola [Ferdinand-Braun-Institut, Berlin (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut, Berlin (Germany)

2013-07-01

We studied (In)AlGaN multiple quantum wells (MQWs) emitting in the UV-B spectral region with photoluminescence and electroluminescence spectroscopy. The internal quantum efficiency (IQE) was determined by temperature dependent measurements (5 K-300 K). The quantum confined Stark effect (QCSE) was investigated by studying the shift of the emission energy with increasing excitation power density. In the first series, Al{sub 0.27}Ga{sub 0.73}N MQWs with different Al{sub x}Ga{sub 1-x}N barriers (0.32

Indium antimonide quantum well structures for electronic device applications

Science.gov (United States)

Edirisooriya, Madhavie

The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth

Performance improvement of InGaN/GaN light-emitting diodes with triangular- shaped multiple quantum wells

International Nuclear Information System (INIS)

Zhu, Li-Hong; Zheng, Qing-Hong; Liu, Bao-Lin

2009-01-01

Triangular-shaped InGaN/GaN multiple quantum wells (MQWs) grown on a sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs). The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the internal quantum efficiency (IQE) of the LEDs with triangular-shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures. The electroluminescence (EL) spectra of the two series devices have been comparatively studied as functions of injection current. It was found that the device with the triangular-shaped MQW structure exhibited a stronger intensity and a narrower linewidth. Furthermore, the peak energy is nearly independent of the injection current, indicating that the triangular MQW LEDs are more efficient and stable than the rectangular ones

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Hung-Pin Hsu

2013-01-01

Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

Multiplicative properties of quantum channels

Science.gov (United States)

Rahaman, Mizanur

2017-08-01

In this paper, we study the multiplicative behaviour of quantum channels, mathematically described by trace preserving, completely positive maps on matrix algebras. It turns out that the multiplicative domain of a unital quantum channel has a close connection to its spectral properties. A structure theorem (theorem 2.5), which reveals the automorphic property of an arbitrary unital quantum channel on a subalgebra, is presented. Various classes of quantum channels (irreducible, primitive, etc) are then analysed in terms of this stabilising subalgebra. The notion of the multiplicative index of a unital quantum channel is introduced, which measures the number of times a unital channel needs to be composed with itself for the multiplicative algebra to stabilise. We show that the maps that have trivial multiplicative domains are dense in completely bounded norm topology in the set of all unital completely positive maps. Some applications in quantum information theory are discussed.

Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods

International Nuclear Information System (INIS)

Wang, Q; Bai, J; Gong, Y P; Wang, T

2011-01-01

Optical investigation has been carried out on InGaN/GaN nanorod structures with different indium compositions, fabricated from InGaN/GaN multiple quantum well (MQW) epitaxial wafers using a self-organized nickel nano-mask and subsequent dry etching techniques. In comparison with the as-grown InGaN/GaN MQWs, the internal quantum efficiencies of the nanorods are significantly improved, in particular, for the green InGaN/GaN nanorods with a high indium composition, the internal quantum efficiency is enhanced by a factor of 8, much larger than the enhancement factor of 3.4 for the blue InGaN/GaN nanorods. X-ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorods, demonstrating that the majority of strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. The excitation-power-dependent photoluminescence measurements have also clearly shown that a significant reduction in the strain-induced quantum confined stark effect has occurred to the nanorod structures.

Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures

DEFF Research Database (Denmark)

Thirstrup, C.

1992-01-01

A novel electro-optical phase modulator working at 1.55 µm is analyzed and proposed. It is shown by a numerical model that in a GaInAs/InP pn-nin-pn multiple-quantum-well waveguide structure, large optical phase modulation can be obtained at small intensity modulation and with improved performance...

Electronic structure properties of the In(Ga)As/GaAs quantum dot–quantum well tunnel-injection system

International Nuclear Information System (INIS)

Sęk, Grzegorz; Andrzejewski, Janusz; Ryczko, Krzysztof; Poloczek, Przemysław; Misiewicz, Jan; Semenova, Elizaveta S; Lemaitre, Aristide; Patriarche, Gilles; Ramdane, Aberrahim

2009-01-01

We report on the electronic properties of GaAs-substrate-based structures designed as a tunnel-injection system composed of self-assembled InAs quantum dots and an In 0.3 Ga 0.7 As quantum well separated by a GaAs barrier. We have performed photoluminescence and photoreflectance measurements which have allowed the determination of the optical transitions in the QW–QD tunnel structure and its respective references with just quantum dots or a quantum well. The effective mass calculations of the band structure dependence on the tunnelling barrier thickness have shown that in spite of an expected significant tunnelling between both parts of the system, its strong asymmetry and the strain distribution cause that the quantum-mechanical-coupling-induced energy shift of the optical transitions is almost negligible for the lowest energy states and weakly sensitive to the width of the barrier, which finds confirmation in the existing experimental data

Electronic and optical properties of GaAs/AlGaAs Fibonacci ordered multiple quantum well systems

Science.gov (United States)

Amini, M.; Soleimani, M.; Ehsani, M. H.

2017-12-01

We numerically investigated the optical rectification coefficients (ORCs), transmission coefficient, energy levels and corresponding eigen-functions of GaAs/AlGaAs Fibonacci ordered multiple quantum well systems (FO-MQWs) in the presence of an external electric field. In our calculations, two different methods, including transfer matrix and finite-difference have been used. It has been illustrated that with three types of the FO-MQWs, presented here, localization of the wave-function in any position of the structure is possible. Therefore, managing the electron distribution within the system is easier now. Finally, using the presented structures we could tune the position and amplitude of the ORCs.

Jumping magneto-electric states of electrons in semiconductor multiple quantum wells

International Nuclear Information System (INIS)

Pfeffer, Pawel; Zawadzki, Wlodek

2011-01-01

Orbital and spin electron states in semiconductor multiple quantum wells in the presence of an external magnetic field transverse to the growth direction are considered. Rectangular wells of GaAs/GaAlAs and InAs/AlSb are taken as examples. It is shown that, in addition to magneto-electric states known from one-well systems, there appear magneto-electric states having a much stronger dependence of energies on a magnetic field and exhibiting an interesting anti-crossing behavior. The origin of these states is investigated and it is shown that the strong field dependence of the energies is related to an unusual 'jumping' behavior of their wavefunctions between quantum wells as the field increases. The ways of investigating the jumping states by means of interband magneto-luminescence transitions or intraband cyclotron-like transitions are considered and it is demonstrated that the jumping states can be observed. The spin g factors of electrons in the jumping states are calculated using the real values of the spin–orbit interaction and bands' nonparabolicity for the semiconductors in question. It is demonstrated that the jumping states offer a wide variety of the spin g factors

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

OpenAIRE

Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

2013-01-01

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

KAUST Repository

Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.

2015-01-01

on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included

Luminescence of highly excited nonpolar a-plane GaN and AlGaN/GaN multiple quantum wells

International Nuclear Information System (INIS)

Jursenas, S.; Kuokstis, E.; Miasojedovas, S.; Kurilcik, G.; Zukauskas, A.; Chen, C.Q.; Yang, J.W.; Adivarahan, V.; Asif Khan, M.

2004-01-01

Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with a various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient luminescence featured a significant enhancement on nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial layer overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤ 10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells were shown to be determined by the substrate quality. (author)

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

International Nuclear Information System (INIS)

Christian, George M.; Hammersley, Simon; Davies, Matthew J.; Dawson, Philip; Kappers, Menno J.; Massabuau, Fabien C.P.; Oliver, Rachel A.; Humphreys, Colin J.

2016-01-01

We report on the effects of varying the number of quantum wells (QWs) in an InGaN/GaN multiple QW (MQW) structure containing a 23 nm thick In0.05Ga0.95N prelayer doped with Si. The calculated conduction and valence bands for the structures show an increasing total electric field across the QWs with increasing number of QWs. This is due to the reduced strength of the surface polarisation field, which opposes the built-in field across the QWs, as its range is increased over thicker samples. Low temperature photoluminescence (PL) measurements show a red shifted QW emission peak energy, which is attributed to the enhanced quantum confined Stark effect with increasing total field strength across the QWs. Low temperature PL time decay measurements and room temperature internal quantum efficiency (IQE) measurements show decreasing radiative recombination rates and decreasing IQE, respectively, with increasing number of QWs. These are attributed to the increased spatial separation of the electron and hole wavefunctions, consistent with the calculated band profiles. It is also shown that, for samples with fewer QWs, the reduction of the total field across the QWs makes the radiative recombination rate sufficiently fast that it is competitive with the efficiency losses associated with the thermal escape of carriers. (copyright 2016 The Authors. Phys. Status Solidi C published by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

International Nuclear Information System (INIS)

Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

2007-01-01

Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

Piezomodulated reflectivity on CdMnTe/CdTe quantum well structures as a new standard characterization method

Energy Technology Data Exchange (ETDEWEB)

Kurtz, E.; Schmitt, K.; Hommel, D.; Waag, A.; Bicknell-Tassius, R.N.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

1993-01-30

Piezomodulated reflectivity (PZR) measurements are reported for the first time as a standard characterization method for CdMnTe/CdTe single (SQW) and multiple (MQW) quantum wells grown by molecular beam epitaxy on CdTe substrates 1 mm thick. Previously, modulation spectroscopy studies of II-VI structures required thin substrates which needed special preparation. In this paper we present studies of optical properties of CdMnTe/CdTe SQWs and MWQs using the PZR technique. The samples, mounted on a sinusoidally driven piezoelectric transducer are subjected to an alternating strain. Exploiting ''lock-in'' techniques, the first derivative of the reflectivity is measured directly. Specific electronic transitions, e.g. excitons, are well resolved in the modulated spectrum and can be easily identified. This makes PZR a very sensitive and powerful tool for the characterization of quantum well structures, and a useful complement to other standard techniques such as photoluminescence and excitation spectroscopy. (orig.).

Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

International Nuclear Information System (INIS)

Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

2009-01-01

The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-08-31

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

International Nuclear Information System (INIS)

Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-01-01

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

Effects of Hydrostatic Pressure and Electric Field on the Electron-Related Optical Properties in GaAs Multiple Quantum Well.

Science.gov (United States)

Ospina, D A; Mora-Ramos, M E; Duque, C A

2017-02-01

The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coefficients of linear and nonlinear optical absorption and of the relative refractive index change associated to transitions between allowed subbands are calculated with the use of a two-level scheme for the density matrix equation of motion and the rotating wave approximation. It is noticed that the hydrostatic pressure enhances the amplitude of the nonlinear contribution to the optical response of the multiple quantum well, whilst the linear one becomes reduced. Besides, the calculated coefficients are blueshifted due to the increasing of the applied electric field, and shows systematically dependence upon the hydrostatic pressure. The comparison of these results with those related with the consideration of a stationary spectrum of states in the heterostructure-obtained by placing infinite confining barriers at a conveniently far distance-shows essential differences in the pressure-induced effects in the sense of resonant frequency shifting as well as in the variation of the amplitudes of the optical responses.

Hot electron and real space transfer in double-quantum-well structures

International Nuclear Information System (INIS)

Okuno, Eiichi; Sawaki, Nobuhiko; Akasaki, Isamu; Kano, Hiroyuki; Hashimoto, Masafumi.

1991-01-01

The hot electron phenomena and real space transfer (RST) effect are studied in GaAs/AlGaAs double-quantum-well (DQW) structures, in which we have two kind of quantum wells with different widths. The drift velocity and the electron temperature at liquid helium temperature are investigated as a function of the external electric field applied parallel to the heterointerface. By increasing the field, the electron temperature rises and reaches a plateau in the intermediate region, followed by further rise in the high-field region. The appearance of the plateau is attributed to the RST effect between the two quantum wells. The threshold field for the appearance of the plateau is determined by the difference energy between the quantized levels in two wells. The energy loss rate as a function of the electron temperature indicates that the RST is assisted by LO phonon scattering. (author)

Conductance in double quantum well systems

International Nuclear Information System (INIS)

Hasbun, J E

2003-01-01

The object of this paper is to review the electronic conductance in double quantum well systems. These are quantum well structures in which electrons are confined in the z direction by large band gap material barrier layers, yet form a free two-dimensional Fermi gas within the sandwiched low band gap material layers in the x-y plane. Aspects related to the conductance in addition to the research progress made since the inception of such systems are included. While the review focuses on the tunnelling conductance properties of double quantum well devices, the longitudinal conductance is also discussed. Double quantum well systems are a more recent generation of structures whose precursors are the well known double-barrier resonant tunnelling systems. Thus, they have electronic signatures such as negative differential resistance, in addition to resonant tunnelling, whose behaviours depend on the wavefunction coupling between the quantum wells. As such, the barrier which separates the quantum wells can be tailored in order to provide better control of the device's electronic properties over their single well ancestors. (topical review)

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

International Nuclear Information System (INIS)

Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.; Colter, Peter C.; Bedair, S. M.

2016-01-01

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In x Ga 1−x As 1−z P z /In y Ga 1−y P (x > y) and In x Ga 1−x P/In y Ga 1−y P (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In x Ga 1−x As 1−z P z /In y Ga 1−y P can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

International Nuclear Information System (INIS)

Lai, Wang; Jia-Xing, Wang; Wei, Zhao; Xiang, Zou; Yi, Luo

2010-01-01

Blue In 0.2 Ga 0.8 N multiple quantum wells (MQWs) with In x Ga 1–x N (x = 0.01–0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation. (condensed matter: structure, thermal and mechanical properties)

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

Energy Technology Data Exchange (ETDEWEB)

Naranjo, F.B.; Valdueza-Felip, S.; Gonzalez-Herraez, M. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Kandaswamy, P.K.; Lahourcade, L.; Calvo, V.; Monroy, E. [CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Martin-Lopez, S.; Corredera, P. [Departamento de Metrologia, Instituto de Fisica Aplicada (CSIC), 28006 Madrid (Spain)

2010-01-15

The third order susceptibility is responsible for a variety of optical non-linear phenomena - like self focusing, phase conjugation and four-wave mixing - with applications in coherent control of optical communication. InN is particularly attractive due to its near-IR bandgap and predicted high nonlinear effects. Moreover, the synthesis of InN nanostructures makes possible to taylor the absorption edge in the telecomunication spectral range and enhance nonlinear parameters thanks to carrier confinement. In this work, we assess the nonlinear optical behavior of InN/In{sub x}Ga{sub (1-x)}N (0.9 > x > 0.7) multiple-quantum-well (MQW) structures grown by plasma-assisted MBE on GaN-on-sapphire templates. Low-temperature (5 K) photoluminescence measurements show near-IR emission whose intensity increases with the In content in the barriers, which is explained in terms of the existence of piezoelectric fields in the structures. The nonlinear optical absorption coefficient, {alpha}{sub 2}, were measured at 1.55 {mu}m using the Z-scan method. We observe a strong dependence of the nonlinear absorption coefficient on the In content in the barriers. Saturable absorption is observed for the sample with x = 0.9, with {alpha}{sub 2} {proportional_to} -9 x 10{sub 3} cm/GW. For this sample, an optically controlled reduction of the speed of light by a factor S {proportional_to} 80 is obtained at 1.55 {mu}m (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells

International Nuclear Information System (INIS)

Wen, X M; Davis, J A; McDonald, D; Dao, L V; Hannaford, P; Coleman, V A; Tan, H H; Jagadish, C; Koike, K; Sasa, S; Inoue, M; Yano, M

2007-01-01

We have investigated carrier relaxation and exciton recombination dynamics in ZnO/ZnMgO multiple quantum wells using femtosecond pump-probe techniques at room temperature. For a probe energy above the band gap, the hot carriers exhibit an effective relaxation by longitudinal optical phonon scattering with a cooling time of 700-850 fs. By detecting the emission near the band-gap, a longer decay time of a few picoseconds was observed which is attributed to acoustic phonon scattering. As the probe energy is decreased further, the decay time continues to increase due to the transitions of exciton recombination or localized carrier recombination

Spin Splitting in Different Semiconductor Quantum Wells

International Nuclear Information System (INIS)

Hao Yafei

2012-01-01

We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Biexciton binding energy in ZnSe quantum wells and quantum wires

DEFF Research Database (Denmark)

Wagner, Hans-Peter; Langbein, Wolfgang; Hvam, Jørn Märcher

2002-01-01

The biexciton binding energy E-XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating...... for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain...

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Energy Technology Data Exchange (ETDEWEB)

Hashem, Islam E.; Zachary Carlin, C.; Hagar, Brandon G.; Colter, Peter C.; Bedair, S. M., E-mail: bedair@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-03-07

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P (x > y) and In{sub x}Ga{sub 1−x}P/In{sub y}Ga{sub 1−y}P (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In{sub x}Ga{sub 1−x}As{sub 1−z}P{sub z}/In{sub y}Ga{sub 1−y}P can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). The effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.

Resonant Tunnelling in Barrier-in-Well and Well-in-Well Structures

International Nuclear Information System (INIS)

Jiang-Hong, Yao; Zhang-Yan; Wei-Wu, Li; Yong-Chun, Shu; Zhan-Guo, Wang; Jing-Jun, Xu; Guo-Zhi, Jia

2008-01-01

A Schrödinger equation is solved numerically for a barrier in a quantum well and a quantum well in another well structure by the transfer matrix technique. Effect of structure parameters on the transmission probabilities is investigated in detail. The results suggest that symmetry plays an important role in the coupling effect between the quantum wells. The relationship between the width of the inner well and the resonant energy levels in well-in-well structures is also studied. It is found that the ground state energy and the second resonant energy decrease with increasing width of the inner well, while the first resonant energy remains constant

Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

NARCIS (Netherlands)

Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.

2004-01-01

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we

Enhancement of optical Kerr effect in quantum-cascade lasers with multiple resonance levels.

Science.gov (United States)

Bai, Jing; Citrin, D S

2008-08-18

In this paper, we investigated the optical Kerr lensing effect in quantum-cascade lasers with multiple resonance levels. The Kerr refractive index n2 is obtained through the third-order susceptibility at the fundamental frequency chi(3)( omega; omega, omega,-omega). Resonant two-photon processes are found to have almost equal contributions to chi(3)( omega; omega, omega,-omega) as the single-photon processes, which result in the predicted enhancement of the positive nonlinear (Kerr) refractive index, and thus may enhance mode-locking of quantum-cascade lasers. Moreover, we also demonstrate an isospectral optimization strategy for further improving n2 through the band-structure design, in order to boost the multimode performance of quantum-cascade lasers. Simulation results show that the optimized stepwise multiple-quantum-well structure has n2 approximately 10-8 cm2/W, a twofold enhancement over the original flat quantum-well structure. This leads to a refractive-index change (delta)n of about 0.01, which is at the upper bound of those reported for typical Kerr medium. This stronger Kerr refractive index may be important for quantum-cascade lasers ultimately to demonstrate self-mode-locking.

Asymmetric quantum well broadband thyristor laser

Science.gov (United States)

Liu, Zhen; Wang, Jiaqi; Yu, Hongyan; Zhou, Xuliang; Chen, Weixi; Li, Zhaosong; Wang, Wei; Ding, Ying; Pan, Jiaoqing

2017-11-01

A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry-Perot (FP) ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ-10 dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure. Project supported by the National Natural Science Foundation of China (Nos. 61604144, 61504137). Zhen Liu and Jiaqi Wang contributed equally to this work.

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

Science.gov (United States)

Park, Ji-Hyeon; Mandal, Arjun; Kang, San; Chatterjee, Uddipta; Kim, Jin Soo; Park, Byung-Guon; Kim, Moon-Deock; Jeong, Kwang-Un; Lee, Cheul-Ro

2016-08-24

This article demonstrates for the first time to the best of our knowledge, the merits of InGaN/GaN multiple quantum wells (MQWs) grown on hollow n-GaN nanowires (NWs) as a plausible alternative for stable photoelectrochemical water splitting and efficient hydrogen generation. These hollow nanowires are achieved by a growth method rather not by conventional etching process. Therefore this approach becomes simplistic yet most effective. We believe relatively low Ga flux during the selective area growth (SAG) aids the hollow nanowire to grow. To compare the optoelectronic properties, simultaneously solid nanowires are also studied. In this present communication, we exhibit that lower thermal conductivity of hollow n-GaN NWs affects the material quality of InGaN/GaN MQWs by limiting In diffusion. As a result of this improvement in material quality and structural properties, photocurrent and photosensitivity are enhanced compared to the structures grown on solid n-GaN NWs. An incident photon-to-current efficiency (IPCE) of around ~33.3% is recorded at 365 nm wavelength for hollow NWs. We believe that multiple reflections of incident light inside the hollow n-GaN NWs assists in producing a larger amount of electron hole pairs in the active region. As a result the rate of hydrogen generation is also increased.

InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

International Nuclear Information System (INIS)

Cao, Meng; Wu, Hui-Zhen; Lao, Yan-Feng; Cao, Chun-Fang; Liu, Cheng

2009-01-01

The intermixing effect on InAs 0.45 P 0.55 /InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.

InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

Energy Technology Data Exchange (ETDEWEB)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Durand, Christophe; Pan, Qing; Monroy, Eva; Eymery, Joel [CEA-CNRS-UJF Group ' ' Nanophysique et semi-conducteurs' ' , CEA/INAC/SP2M, Grenoble (France); Grenet, Louis [CEA-LITEN, Grenoble (France); Peyrade, David [Laboratoire des Technologies de la Microelectronique (LTM/CNRS), Grenoble (France); Bougerol, Catherine [CEA-CNRS-UJF Group ' ' Nanophysique et semi-conducteurs' ' , Institut Neel-CNRS, Grenoble (France); Chikhaoui, Walf [CEA-LETI, Grenoble (France)

2013-03-15

We investigate the influence of growth temperature, p -doping with bis-cyclopentadienyl magnesium (Cp{sub 2}Mg) and number N of multi-quantum wells on the surface morphology, the electrical and optical properties of InGaN-based solar cells grown by metal-organic vapour phase epitaxy. Atomic force microscopy measurements show no influence of multiple-quantum well number on the surface morphology, but a smoothing with the increase of the Cp{sub 2}Mg flow. Electrochemical capacitance-voltage profiling exhibits an increase of the N{sub a}-N{sub d} concentration when increasing the Cp{sub 2}Mg flow from 250 to 700 sccm. X-ray diffraction analysis and transmission electron microscopy measurements confirm completely strained quantum wells with similar superlattice period for N=5 to 30. Finally, first solar cells have been demonstrated with a maximum external quantum efficiency of 38% at 380 nm wavelength for N=30. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

International Nuclear Information System (INIS)

Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

1988-01-01

A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

Quantum theory of multiple-input-multiple-output Markovian feedback with diffusive measurements

International Nuclear Information System (INIS)

Chia, A.; Wiseman, H. M.

2011-01-01

Feedback control engineers have been interested in multiple-input-multiple-output (MIMO) extensions of single-input-single-output (SISO) results of various kinds due to its rich mathematical structure and practical applications. An outstanding problem in quantum feedback control is the extension of the SISO theory of Markovian feedback by Wiseman and Milburn [Phys. Rev. Lett. 70, 548 (1993)] to multiple inputs and multiple outputs. Here we generalize the SISO homodyne-mediated feedback theory to allow for multiple inputs, multiple outputs, and arbitrary diffusive quantum measurements. We thus obtain a MIMO framework which resembles the SISO theory and whose additional mathematical structure is highlighted by the extensive use of vector-operator algebra.

Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems

International Nuclear Information System (INIS)

Hu, Y.-J.; Huang, Y.-W.; Fang, C.-H.; Wang, J.-C.; Chen, Y.-F.; Nee, T.-E.

2010-01-01

The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement.

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

Science.gov (United States)

Sun, Yijun; Cheng, Zhiyuan; Zhou, Qiang; Sun, Ying; Sun, Jiabao; Liu, Yanhua; Wang, Meifang; Cao, Zhen; Ye, Zhi; Xu, Mingsheng; Ding, Yong; Chen, Peng; Heuken, Michael; Egawa, Takashi

2018-02-01

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

International Nuclear Information System (INIS)

Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J

2009-01-01

We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp 3 s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Vargas, I; Madrigal-Melchor, J; Vlaev, S J, E-mail: isaac@planck.reduaz.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, ZAC. (Mexico)

2009-05-01

We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp{sup 3}s' tight-binding approximation including spin for the hole level structure analysis. The parameters of the tight-binding hamiltonian were taken from Klimeck et al. [Klimeck G, Bowen R C, Boykin T B, Salazar-Lazaro C, Cwik T A and Stoica A 2000 Superlattice. Microst. 27 77], first neighbors parameters that give realiable results for the valence band of Si. The calculations are based on a scheme previously proposed and applied to delta-doped quantum well systems [Vlaev S J and Gaggero-Sager L M 1998 Phys. Rev. B 58 1142]. The scheme relies on the incorporation of the delta-doped quantum well potential in the diagonal terms of the tight-binding hamiltonian. We give a detail description of the delta-doped quantum well structures, this is, we study the hole subband structure behavior as a function of the impurity density, the interwell distance of the doped planes and the superlattice period. We also compare our results with the available theoretical and experimental data, obtaining a reasonable agreement.

Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells

International Nuclear Information System (INIS)

Hong, S. P.; Yi, K. S.; Quinn, J. J.

2000-01-01

The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society

Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content

Energy Technology Data Exchange (ETDEWEB)

Liu, Tong [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Jiao, Shujie, E-mail: shujiejiao@gmail.com [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin 150001 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Dongbo [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gao, Shiyong, E-mail: gaoshiyong@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Tianpeng [EpiTop Optoelectronic Co., Ltd., Pingxiang 337000 (China); Liang, Hongwei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao, Liancheng [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-02-05

Highlights: • Structural and optical properties of In GaN/Al{sub x}In{sub y}Ga{sub 1−x−y}N MQWs were investigated. • The existence of In-rich clusters has been verified by Raman spectra. • The degree of localization effect increase with increasing Al content in barriers. • The origin of the deep localized states could be assigned to the larger QCSE. • Recombination mechanism of carriers with increasing temperature has been proposed. - Abstract: The structural and optical properties of In{sub 0.20}Ga{sub 0.80}N/Al{sub x}In{sub y}Ga{sub 1−x−y}N multiple quantum wells samples with varying Al content in barrier layers grown on sapphire substrates by metalorganic chemical vapor deposition have been investigated by means of high-resolution X-ray diffraction, Raman scattering measurements and temperature-dependent photoluminescence. Raman measurements verified the existence of In-rich clusters in ternary and quaternary layers. At 10 K and 300 K, the PL spectrum of each sample is dominated by a sharp emission peak arising from In{sub 0.20}Ga{sub 0.80}N well layers. The anomalous temperature-dependent S-shaped behaviors of emission energies have been observed, indicating the presence of localized states induced by the potential fluctuations in the quantum wells due to the inhomogeneous distribution of In-rich clusters. The degree of the localization effect and the transition temperatures between different temperature regions can be enhanced by increasing Al content in barrier layers. The improvement of the localized states emission has been observed at the lower energy side of band gap emission of quantum wells with increasing Al content. The origin of the deep localized states could be attributed to the larger quantum-confined Stark effect in the quantum wells with higher Al content. The recombination mechanism of carriers between band edge and localized states was proposed for interpreting of the emission characteristics.

Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films

Science.gov (United States)

Mezdrogina, M. M.; Vinogradov, A. Ya.; Kozhanova, Yu. V.; Levitskii, V. S.

2018-04-01

It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

Nanoroughness localization of excitons in GaAs multiple quantum wells studied by transient four-wave mixing

DEFF Research Database (Denmark)

Birkedal, Dan; Vadim, Lyssenko; Pantke, Karl-Heinz

1995-01-01

The interface roughness on a nanometer scale plays a decisive role in dephasing of excitons in GaAs multiple quantum wells. The excitonic four-wave mixing signal shows a free polarization decay and a corresponding homogeneously broadened line from areas with interface roughness on a scale larger...

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

Science.gov (United States)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

Terahertz study of ultrafast carrier dynamics in InGa/GaN multiple quantum wells

DEFF Research Database (Denmark)

Porte, Henrik; Turchinovich, Dmitry; Cooke, David

2009-01-01

Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay...... of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well...

Subband structure comparison between n- and p- type double delta-doped Ga As quantum wells

International Nuclear Information System (INIS)

Rodriguez V, I.; Gaggero S, L.M.

2004-01-01

We compute the electron level structure (n-type) and the hole subband structure (p-type) of double -doped GaAs (DDD) quantum wells, considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order to describe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates that exchange effects are more important in p-type DDD quantum wells than in n-type DDD Also our results agree with the experimental data available. (Author) 33 refs., 2 tabs., 5 figs

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

Science.gov (United States)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Optical studies of wide bandgap semiconductor epilayers and quantum well structures

International Nuclear Information System (INIS)

May, L.

1998-09-01

This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant

One-dimensional multiple-well oscillators: A time-dependent

Indian Academy of Sciences (India)

... quantum mechanical multiple-well oscillators. An imaginary-time evolution technique, coupled with the minimization of energy expectation value to reach a global minimum, subject to orthogonality constraint (for excited states) has been employed. Pseudodegeneracy in symmetric, deep multiple-well potentials, probability ...

Tunnelling and relaxation in semiconductor double quantum wells

International Nuclear Information System (INIS)

Ferreira, R.; Bastard, G.

1997-01-01

Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)

Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

Science.gov (United States)

Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

2012-10-01

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

Science.gov (United States)

Ho, Cheng-Han; Lien, Der-Hsien; Chang, Hung-Chih; Lin, Chin-An; Kang, Chen-Fang; Hsing, Meng-Kai; Lai, Kun-Yu; He, Jr-Hau

2012-12-07

We experimentally and theoretically demonstrated the hierarchical structure of SiO(2) nanorod arrays/p-GaN microdomes as a light harvesting scheme for InGaN-based multiple quantum well solar cells. The combination of nano- and micro-structures leads to increased internal multiple reflection and provides an intermediate refractive index between air and GaN. Cells with the hierarchical structure exhibit improved short-circuit current densities and fill factors, rendering a 1.47 fold efficiency enhancement as compared to planar cells.

Effect of hydrogen on properties of diode structures with Pd/GaAs/InGaAs quantum wells

CERN Document Server

Karpovich, I A; Shobolov, E L; Zvonkov, B N

2002-01-01

The effect of hydrogen on the photoelectric properties and on the photoluminescence of the Pd/GaAs/InGaAs quantum well diode structures was investigated. The effect of the GaAs anodic oxide thickness on the structure parameters was found and its optimal thickness for the hydrogen sensors was determined. The essential importance of the metal bridges in the thin oxide layers for the current voltage characteristic was established. It was shown that quantum wells increase the sensitivity of the structures to hydrogen. The defect formation during the deposition of the Pd electrode on the natural and anodized GaAs surface was investigated using the quantum wells as the local defect probes. The possibility of the hydrogen passivation of the defects in the diode structures by introduction of the atomic hydrogen through the Pd electrode in a molecular hydrogen atmosphere was proved

Fermi level splitting and thermionic current improvement in low-dimensional multi-quantum-well (MQW) p-i-n structures

International Nuclear Information System (INIS)

Varonides, Argyrios C.

2006-01-01

Photo-excitation and subsequent thermionic currents are essential components of photo-excited carrier transport in multi-quantum-well photovoltaic (hetero-PV) structures. p-i-n multi-quantum structures are useful probes for a better understanding of PV device properties. Illumination of the intrinsic region of p-i-n multi-structures causes carrier trapping in any of the quantum wells, and subsequent carrier recombination or thermal escape is possible. At the vicinity of a quantum well, we find that the (quasi) Fermi levels undergo an upward split by a small, but non-negligible, energy amount ΔE F in the order of 12 meV. We conclude this fact by comparing the photo-excited carriers trapped in a quantum well, under illumination, to the carrier concentrations under dark. Based on such a prediction, we subsequently relate thermionic current density dependence on Fermi level splitting, concluding that excess thermal currents may increase by a factor of the order of 2. We conclude that illumination causes (a) Fermi level separation and (b) an apparent increase in thermionic currents

Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

International Nuclear Information System (INIS)

Zubialevich, Vitaly Z.; Sadler, Thomas C.; Dinh, Duc V.; Alam, Shahab N.; Li, Haoning; Pampili, Pietro; Parbrook, Peter J.

2014-01-01

InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350 nm have been prepared by metalorganic chemical vapor deposition on planar AlN templates. To obtain strong room temperature luminescence from InAlN QWs a two temperature approach was required. The intensity decayed weakly as the temperature was increased to 300 K, with ratios I PL (300 K)/I PL (T) max up to 70%. This high apparent internal quantum efficiency is attributed to the exceptionally strong carrier localization in this material, which is also manifested by a high Stokes shift (0.52 eV) of the luminescence. Based on these results InAlN is proposed as a robust alternative to AlGaN for ultraviolet emitting devices. - Highlights: • InAlN quantum wells with AlGaN barriers emitting in near UV successfully grown using quasi-2T approach. • 1 nm AlGaN capping of InAlN quantum wells used to avoid In desorption during temperature ramp to barrier growth conditions. • Strong, thermally resilient luminescence obtained as a result of growth optimization. • Promise of InAlN as an alternative active region for UV emitters demonstrated

Optical transitions involving unconfined energy states in In/sub x/Ga/sub 1-//sub x/As/GaAs multiple quantum wells

International Nuclear Information System (INIS)

Ji, G.; Dobbelaere, W.; Huang, D.; Morkoc, H.

1989-01-01

Optical transitions with energies higher than that of the GaAs band gap in highly strained In/sub x/Ga/sub 1-//sub x/As/GaAs multiple--quantum-well structures have been observed in photoreflectance spectra. In some samples as many as seven such structures were present. We identify them as transitions between the unconfined electron states and the confined heavy-hole states. For energies below the GaAs signal, intense transitions corresponding to such unconfined electron subbands were also observed. The intensity of the transitions involving unconfined electron subbands decreases with increasing well width, but is weakly dependent on the mole fraction x. The transmission coefficients are calculated in order to locate the positions of the unconfined electron subband energies. Good agreement is obtained between the experimental data and the theoretical calculation

Critical parameters for the molecular beam epitaxial growth of 1.55 μm (Ga,In)(N,As) multiple quantum wells

International Nuclear Information System (INIS)

Ishikawa, Fumitaro; Luna, Esperanza; Trampert, Achim; Ploog, Klaus H.

2006-01-01

The authors discuss the effect of substrate temperature and As beam equivalent pressure (BEP) on the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wells (MQWs). Transmission electron microscopy studies reveal that a low substrate temperature essentially prevents composition modulations. Secondary ion mass spectrometry results indicate that a low As BEP reduces the incorporation competition of group V elements. The low substrate temperature and low As BEP growth condition leads to (Ga,In)(N,As) MQWs containing more than 4% N preserving good structural and optical properties, and hence demonstrating 1.55 μm photoluminescence emission at room temperature

Enhancement of coherent acoustic phonons in InGaN multiple quantum wells

Science.gov (United States)

Hafiz, Shopan D.; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2015-03-01

Enhancement of coherent zone folded longitudinal acoustic phonon (ZFLAP) oscillations at terahertz frequencies was demonstrated in InGaN multiple quantum wells (MQWs) by using wavelength degenerate time resolved differential transmission spectroscopy. Screening of the piezoelectric field in InGaN MQWs by photogenerated carriers upon femtosecond pulse excitation gave rise to terahertz ZFLAPs, which were monitored at the Brillouin zone center in the transmission geometry. MQWs composed of 10 pairs InxGa1-xN wells and In0.03Ga0.97N barriers provided coherent phonon frequencies of 0.69-0.80 THz depending on the period of MQWs. Dependences of ZFLAP amplitude on excitation density and wavelength were also investigated. Possibility of achieving phonon cavity, incorporating a MQW placed between two AlN/GaN phonon mirrors designed to exhibit large acoustic gaps at the zone center, was also explored.

Optical Properties of InGaAs/ GaAs Multi Quantum Wells Structure Grown By Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Mohd Sharizal Alias; Mohd Fauzi Maulud; Mohd Razman Yahya; Abdul Fatah Awang Mat; Suomalainen, Soile

2008-01-01

Inclusive analysis on the optical characteristics of InGaAs/ GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/ GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/ GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication. (author)

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation.

Science.gov (United States)

Islam, Abu Bashar Mohammad Hamidul; Shim, Jong-In; Shin, Dong-Soo

2018-05-07

We investigate the cause of the optoelectronic performance variations in InGaN/GaN multiple-quantum-well blue light-emitting diodes, using three different samples from an identical wafer grown on a c -plane sapphire substrate. Various macroscopic measurements have been conducted, revealing that with increasing strain in the quantum wells (QWs), the crystal quality improves with an increasing peak internal quantum efficiency while the droop becomes more severe. We propose to explain these variations using a model where the in-plane local potential fluctuation in QWs is considered. Our work is contrasted with prior works in that macroscopic measurements are utilized to find clues on the microscopic changes and their impacts on the device performances, which has been rarely attempted.

Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

DEFF Research Database (Denmark)

Iida, Daisuke; Fadil, Ahmed; Chen, Yuntian

2015-01-01

We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhance......We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density...

Two color photodetector using an asymmetric quantum well structure

OpenAIRE

Lantz, Kevin R.

2002-01-01

Approved for public release; distribution is unlimited The past twenty years have seen an explosion in the realm of infrared detection technology fueled by improvements in III-V semiconductor technology and by new semiconductor growth methods. One of the fastest growing areas of this research involves the use of bandgap engineering in order to create artificial quantum wells for use in Quantum Well Infrared Photodetectors (QWIPs). QWIPs have an advantage over other infrared detectors such ...

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

KAUST Repository

Lien, Derhsien

2015-01-01

Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

Spinor-electron wave guided modes in coupled quantum wells structures by solving the Dirac equation

International Nuclear Information System (INIS)

Linares, Jesus; Nistal, Maria C.

2009-01-01

A quantum analysis based on the Dirac equation of the propagation of spinor-electron waves in coupled quantum wells, or equivalently coupled electron waveguides, is presented. The complete optical wave equations for Spin-Up (SU) and Spin-Down (SD) spinor-electron waves in these electron guides couplers are derived from the Dirac equation. The relativistic amplitudes and dispersion equations of the spinor-electron wave-guided modes in a planar quantum coupler formed by two coupled quantum wells, or equivalently by two coupled slab electron waveguides, are exactly derived. The main outcomes related to the spinor modal structure, such as the breaking of the non-relativistic degenerate spin states, the appearance of phase shifts associated with the spin polarization and so on, are shown.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

Energy Technology Data Exchange (ETDEWEB)

Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-15

This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

International Nuclear Information System (INIS)

Wagener, Viera; Olivier, E.J.; Botha, J.R.

2009-01-01

This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced 'memory effect'

International Nuclear Information System (INIS)

Feu, W H M; Villas-Boas, J M; Cury, L A; Guimaraes, P S S; Vieira, G S; Tanaka, R Y; Passaro, A; Pires, M P; Landi, S M; Souza, P L

2009-01-01

A study of magnetotunnelling in weakly coupled multi-quantum wells reveals a new phenomenon which constitutes a kind of memory effect in the sense that the electrical resistance of the sample after application of the magnetic field is different from before and contains the information that a magnetic field was applied previously. The change in the electric field domain configuration triggered by the magnetic field was compared for two samples, one strictly periodic and another with a thicker quantum well inserted into the periodic structure. For applied biases at which two electric field domains are present in the sample, as the magnetic field is increased a succession of discontinuous reductions in the electrical resistance is observed due to the magnetic field-induced rearrangement of the electric field domains, i.e. the domain boundary jumps from well to well as the magnetic field is changed. The memory effect is revealed for the aperiodic structure as the electric field domain configuration triggered by the magnetic field remains stable after the field is reduced back to zero. This effect is related to the multi-stability in the current-voltage characteristics observed in some weakly coupled multi-quantum well structures.

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2014-08-04

The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

International Nuclear Information System (INIS)

Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Rass, Jens; Wernicke, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

2014-01-01

The design and Mg-doping profile of AlN/Al 0.7 Ga 0.3 N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm 2

Quantum correlations and light localization in disordered nanophotonic structures

DEFF Research Database (Denmark)

Smolka, Stephan

This thesis reports results on quantum properties of light in multiple-scattering nano-structured materials. Spatial quantum correlations of photons are demonstrated experimentally that are induced by multiple scattering of squeezed light and of purely quantum origin. By varying the quantum state...

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

Science.gov (United States)

Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

2016-12-01

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

DEFF Research Database (Denmark)

Dery, H.; Tromborg, Bjarne; Eisenstein, G.

2003-01-01

We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared to ...

Femtosecond coherent control of absorption and free induction decay in a GaAs multiple quantum well

CERN Document Server

Yee, D S

2000-01-01

Excitonic polarizations are coherently excited using two phase-locked pulses. By probing the linear propagation of the pulses through a GaAs/AlGaAs multiple quantum well sample, we directly demonstrate the intriguing interaction between the coherent exciton polarizations and the controlling pulses. It is shown that the second pulse can be either strongly amplified by taking up energy gained from the destruction of the exciton polarization or drastically decreased by giving up all its energy to excitons. The temporal signatures of the transmitted pulse shapes agree well with model calculations.

Chalcopyrite semiconductors for quantum well solar cells

Energy Technology Data Exchange (ETDEWEB)

Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)

2011-11-15

The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure

Directory of Open Access Journals (Sweden)

Q.-N. Yu

2017-08-01

Full Text Available In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well.

UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

W. Kong

2017-03-01

Full Text Available A high Al-content (y > 0.4 multi-quantum-well (MQW structure with a quaternary InxAlyGa(1-x-yN active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-yN thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm−2 to 107cm−2 and by optimizing the width and depth of the quantum wells.

Crystal Phase Quantum Well Emission with Digital Control.

Science.gov (United States)

Assali, S; Lähnemann, J; Vu, T T T; Jöns, K D; Gagliano, L; Verheijen, M A; Akopian, N; Bakkers, E P A M; Haverkort, J E M

2017-10-11

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Porte, Henrik; Cooke, David

2010-01-01

We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine...

Mobility modulation in inverted delta doped coupled double quantum well structure

Energy Technology Data Exchange (ETDEWEB)

Sahoo, N. [Department of Electronic Science, Berhampur University, 760007, Odisha (India); Sahu, T., E-mail: tsahu_bu@rediffmail.com [Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761008, Odisha (India)

2016-10-01

We have studied the modulation of electron mobility μ as a function of the electric field perpendicular to the interface plane F{sub p} in a GaAs/AlGaAs double quantum well structure near the resonance of subband states. The functional dependence of μ on F{sub p} exhibits a minimum near the anticrossing of subband states leading to an oscillatory behavior of μ. We show that the oscillatory enhancement of μ becomes more pronounced with increase in the difference between the doping concentrations in the side barriers. The oscillation of μ also increases by varying the widths of the two wells through shifting of the position of the middle barrier. It is interesting to show that the oscillation of μ is always larger when there is doping in barrier towards the substrate side compared to that of the surface side due to the difference in the influence of the interface roughness scattering potential. Further, broadening of the central barrier width increases the peaks of the oscillation of μ mostly due to the changes in the ionized impurity scattering potential. Our results can be utilized for the performance enhancement of quantum well field effect transistor devices.

Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems

Science.gov (United States)

Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih

2009-01-01

In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…

Indispensable factors influence the quasi-bound levels of biased multi-barrier quantum well structures

International Nuclear Information System (INIS)

Wang Hongmei; Xu Huaizhe; Zhang Yafei

2005-01-01

A few of mistakes made in transfer matrix method of Airy functions in previous literatures have been identified and corrected in this work. By using our improved transfer matrix method of Airy functions, quasi-bound level dependence upon carrier effective masses, bias, well width, barrier width and height has been investigated systematically for several biased/unbiased double/triple-barrier quantum well structures. Its validity and accuracy has been proved by comparisons with other currently used techniques. It is shown that our improved transfer matrix method of Airy functions is more promising for evaluating and designing intra-band transition far-infrared detectors and quantum cascade lasers

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

Directory of Open Access Journals (Sweden)

R. K. Nayak

2015-11-01

Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.

Characterization of a ZnxCd1-xSe/Znx'Cdy'Mg1-x'-y'Se multiple quantum well structure for mid-infrared device applications by contactless electroreflectance and Fourier transform infrared spectroscopy

International Nuclear Information System (INIS)

Wu, J D; Lin, J W; Huang, Y S; Charles, W O; Shen, A; Zhang, Q; Tamargo, M C

2009-01-01

Contactless electroreflectance (CER) and Fourier transform infrared (FTIR) spectroscopy were used to study the intersubband transitions of a Zn x Cd 1-x Se/Zn x' Cd y' Mg 1-x'-y' Se multiple quantum well (MQW) structure grown by molecular beam epitaxy for mid-infrared device applications. The CER spectrum revealed a wide range of possible optical transitions in the MQW structure. The ground state transition was assigned by comparison with the photoluminescence emission signal taken from the same structure. A comprehensive analysis of the CER spectrum led to the identification of various interband transitions. The intersubband transitions were estimated and confirmed by FTIR measurements. The results demonstrate the potential of using CER as a complementary technique for the contactless and nondestructive characterization of the wide band gap II-VI MQW structures for mid-IR intersubband device applications.

Acousto-optic modulation of III-V semiconductor multiple quantum wells

International Nuclear Information System (INIS)

Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

1996-01-01

We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells

Directory of Open Access Journals (Sweden)

Andrey A. Chernyuk

2006-02-01

Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.

Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

Science.gov (United States)

Liu, Ansheng; Ning, Cun-Zheng

2000-01-01

Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

Crystal Phase Quantum Well Emission with Digital Control

DEFF Research Database (Denmark)

Assali, S.; Laehnemann, J.; Vu, Thi Thu Trang

2017-01-01

One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc......-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement...... of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier...

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.; Oleynik, V. L. [National Research Tomsk State University (Russian Federation)

2017-02-15

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.

Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz

Science.gov (United States)

Liu, Shih-Ming J.; Das, Mukunda B.; Peng, Chin-Kun; Klem, John; Henderson, Timothy S.

1986-01-01

Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.

Analysis and investigation of temperature and hydrostatic pressure effects on optical characteristics of multiple quantum well slow light devices.

Science.gov (United States)

Abdolhosseini, Saeed; Kohandani, Reza; Kaatuzian, Hassan

2017-09-10

This paper represents the influences of temperature and hydrostatic pressure variations on GaAs/AlGaAs multiple quantum well slow light systems based on coherence population oscillations. An analytical model in non-integer dimension space is used to study the considerable effects of these parameters on optical properties of the slow light apparatus. Exciton oscillator strength and fractional dimension constants have special roles on the analytical model in fractional dimension. Hence, the impacts of hydrostatic pressure and temperature on exciton oscillator strength and fractional dimension quantity are investigated theoretically in this paper. Based on the achieved results, temperature and hydrostatic pressure play key roles on optical parameters of the slow light systems, such as the slow down factor and central energy of the device. It is found that the slope and value of the refractive index real part change with alterations of temperature and hydrostatic pressure in the range of 5-40 deg of Kelvin and 1 bar to 2 kbar, respectively. Thus, the peak value of the slow down factor can be adjusted by altering these parameters. Moreover, the central energy of the device shifts when the hydrostatic pressure is applied to the slow light device or temperature is varied. In comparison with previous reported experimental results, our simulations follow them successfully. It is shown that the maximum value of the slow down factor is estimated close to 5.5×10 4 with a fine adjustment of temperature and hydrostatic pressure. Meanwhile, the central energy shift of the slow light device rises up to 27 meV, which provides an appropriate basis for different optical devices in which multiple quantum well slow light is one of their essential subsections. This multiple quantum well slow light device has potential applications for use as a tunable optical buffer and pressure/temperature sensors.

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes. Degree awarded Oct. 1997

Science.gov (United States)

Hunt, W. D.; Brennan, K. F.; Summers, C. J.; Yun, Ilgu

1994-01-01

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

Science.gov (United States)

Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

2018-06-01

Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

Enhanced electroabsorption in strained-layer InxGa1-xAs-InP quantum wells via absorption edge merging

International Nuclear Information System (INIS)

Gomatam, B.N.; Anderson, N.G.

1990-01-01

Optoelectronic modulators are useful for optical communications, optical computing and other applications which require the electronic control of guided light. Considerable research has recently been devoted to multiple quantum well (MQW) modulators which use an electroabsorption effect unique to quantum wells: the quantum confined Stark effect (QCSE). Voltage controlled optical modulation can be achieved by Stark-shifting the absorption edge above and below the incident photon energy. This paper reports that, to obtain increased optical on-off ratios at decreased drive voltages, the authors are investigating a novel approach which exploits characteristics of MQWs under biaxial tension. The light hole band edge lies at a higher energy than the heavy hole band edge in these structures, which is opposite the case for unstrained or biaxially compressed structures. Since the absorption edge associated with the heavy holes decreases more rapidly with applied field than that for the light holes, merging of the two edges can be expected at some value of the applied field. This effect here called absorption edge merging (AEM), can be expected to give rise to a significant improvement in modulator design. We have theoretically investigated the AEM effect in In x Ga 1-x As/InP quantum well structures with x x Ga 1-x As quantum wells are under tension in such structures, hence the required light hole up band configuration can be achieved

Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement

DEFF Research Database (Denmark)

Fadil, Ahmed; Iida, Daisuke; Chen, Yuntian

2014-01-01

for InGaN/GaN quantum-well structures. By using a thin SiN dielectric layer between Ag and GaN we manage to modify and improve surface plasmon coupling effects, and we attribute this to the improved scattering of the nanoparticles at the quantum-well emission wavelength. The results are interpreted using...... numerical simulations, where absorption and scattering cross-sections are studied for different sized particles on GaN and GaN/SiN substrates....

Effect of the change in the interface structure of Pd(100)/SrTiO{sub 3} for quantum-well induced ferromagnetism

Energy Technology Data Exchange (ETDEWEB)

Sakuragi, Shunsuke, E-mail: sakuragi@az.appi.keio.ac.jp [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-0061 (Japan); Ogawa, Tomoyuki [Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Sato, Tetsuya [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-0061 (Japan)

2017-02-01

Measurements of temperature dependent magnetization of Pd(100) ultrathin films on SrTiO{sub 3}(100) substrates which shows quantum-well induced ferromagnetism were performed. We observed the jump in magnetization of Pd(100) due to the structural phase transition of SrTiO{sub 3}, and then, the disappearance of ferromagnetism after temperature-cycle repetition. X-ray reflectivity measurement revealed that the density of a few layers in the Pd film decreased near the Pd/SrTiO{sub 3} interface after temperature cycles. This suggests that the structural change affects the quantum-well induced ferromagnetism, and lowering of the crystallinity of Pd at the interface has a negative effect on quantum-well induced ferromagnetism of Pd(100) ultrathin films. - Highlights: • Interface manipulation of quantum-well induced ferromagnetism was performed. • Ferromagnetic Pd(100) ultrathin films on SrTiO{sub 3} substrate were prepared. • The structural phase transition of SrTiO{sub 3} degraded gradually the interface structure. • Change in the interface structure caused change in the magnetic moment of Pd. • Magnetic change was interpreted by modulation in the effective thickness of the film.

Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect.

Science.gov (United States)

Jiang, Chunyan; Jing, Liang; Huang, Xin; Liu, Mengmeng; Du, Chunhua; Liu, Ting; Pu, Xiong; Hu, Weiguo; Wang, Zhong Lin

2017-09-26

The piezo-phototronic effect is the tuning of piezoelectric polarization charges at the interface to largely enhance the efficiency of optoelectronic processes related to carrier separation or recombination. Here, we demonstrated the enhanced short-circuit current density and the conversion efficiency of InGaN/GaN multiple quantum well solar cells with an external stress applied on the device. The external-stress-induced piezoelectric charges generated at the interfaces of InGaN and GaN compensate the piezoelectric charges induced by lattice mismatch stress in the InGaN wells. The energy band realignment is calculated with a self-consistent numerical model to clarify the enhancement mechanism of optical-generated carriers. This research not only theoretically and experimentally proves the piezo-phototronic effect modulated the quantum photovoltaic device but also provides a great promise to maximize the use of solar energy in the current energy revolution.

Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

Energy Technology Data Exchange (ETDEWEB)

Absalan, H; SalmanOgli, A; Rostami, R

2013-07-31

The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

Simulation of a broadband nano-biosensor based on an onion-like quantum dot–quantum well structure

International Nuclear Information System (INIS)

Absalan, H; SalmanOgli, A; Rostami, R

2013-01-01

The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot–quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 – 760 nm). (laser applications in biology and medicine)

Non-square quantum well growth for reduced threshold current in ...

African Journals Online (AJOL)

This paper presents calculations demonstrating that non-square quantum well growth (well shaping) can result in reduced threshold current for tensilely strained quantum well bipolar diode lasers operating at 1.52ìm m. Calculations of subband structure, optical matrix elements and laser gain are performed for arbitrarily ...

Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

KAUST Repository

Alhashim, Hala H.

2016-05-29

The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-09-01

In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We observed a large blue shift of the photoluminescence peak emission energy and significant increases in the radiative recombination rate for the quantum well structures that incorporated Si-doped prelayers. Simulations of the variation of the conduction and valence band energies show that a strong modification of the band profile occurs for the quantum wells on Si-doped prelayers due to an increase in strength of the surface polarization field. The enhanced surface polarization field opposes the built-in field across the quantum well and thus reduces this built-in electric field. This reduction of the electric field across the quantum well reduces the Quantum Confined Stark Effect and is responsible for the observed blue shift and the change in the recombination dynamics.

Perfect quantum multiple-unicast network coding protocol

Science.gov (United States)

Li, Dan-Dan; Gao, Fei; Qin, Su-Juan; Wen, Qiao-Yan

2018-01-01

In order to realize long-distance and large-scale quantum communication, it is natural to utilize quantum repeater. For a general quantum multiple-unicast network, it is still puzzling how to complete communication tasks perfectly with less resources such as registers. In this paper, we solve this problem. By applying quantum repeaters to multiple-unicast communication problem, we give encoding-decoding schemes for source nodes, internal ones and target ones, respectively. Source-target nodes share EPR pairs by using our encoding-decoding schemes over quantum multiple-unicast network. Furthermore, quantum communication can be accomplished perfectly via teleportation. Compared with existed schemes, our schemes can reduce resource consumption and realize long-distance transmission of quantum information.

Time-domain multiple-quantum NMR

International Nuclear Information System (INIS)

Weitekamp, D.P.

1982-11-01

The development of time-domain multiple-quantum nuclear magnetic resonance is reviewed through mid 1982 and some prospects for future development are indicated. Particular attention is given to the problem of obtaining resolved, interpretable, many-quantum spectra for anisotropic magnetically isolated systems of coupled spins. New results are presented on a number of topics including the optimization of multiple-quantum-line intensities, analysis of noise in two-dimensional spectroscopy, and the use of order-selective excitation for cross polarization between nuclear-spin species

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Energy Technology Data Exchange (ETDEWEB)

Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping; Zhang, Shuming [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zhou, Kun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Institute of Semiconductors (CAS), Beijing 100083 (China); Liu, Zongshun [Institute of Semiconductors (CAS), Beijing 100083 (China)

2015-07-21

Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

Multiple-Access Quantum-Classical Networks

Science.gov (United States)

Razavi, Mohsen

2011-10-01

A multi-user network that supports both classical and quantum communication is proposed. By relying on optical code-division multiple access techniques, this system offers simultaneous key exchange between multiple pairs of network users. A lower bound on the secure key generation rate will be derived for decoy-state quantum key distribution protocols.

Multichannel scattering of charge carriers on quantum well heterostructures

CERN Document Server

Galiev, V I; Polupanov, A F; Goldis, E M; Tansli, T L

2002-01-01

An efficient numerical analytical method has been developed for finding continuum spectrum states in quantum well systems with arbitrary potential profiles that are described by coupled Schroedinger equations. Scattering states and S matrix have been built for the case of multichannel scattering in one-dimensional systems with quantum wells and their symmetry properties are obtained and analyzed. The method is applied for studying hole scattering by strained GaInAs-InGaAsP quantum wells. Coefficients of the hole transmission and reflection as well as delay time are calculated as functions of the energy of the incident hole for various values of parameters of structures and values of the momentum

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

Directory of Open Access Journals (Sweden)

Qi Wang

2013-07-01

Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

Science.gov (United States)

Zybert, M.; Marchewka, M.; Sheregii, E. M.; Rickel, D. G.; Betts, J. B.; Balakirev, F. F.; Gordon, M.; Stier, A. V.; Mielke, C. H.; Pfeffer, P.; Zawadzki, W.

2017-03-01

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at megagauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6-300 K. The 14 ×14 P.p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magnetodonor states in the GaAs wells and possibly in the AlGaAs barriers. The magnetodonor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering

International Nuclear Information System (INIS)

Kim, Dai-sik; Yu, P.Y.

1990-03-01

Relaxation of hot carriers excited by subpicosecond laser pulses has been studied by Raman scattering in GaAs/AlAs multiple quantum wells with well widths varying between 100 and 1000 Angstrom. The hot phonon population observed by Raman scattering is found to decrease with the well width despite the fact that the hot electron temperature remains constant. The results are explained in terms of confinement of both electrons and optical phonons in quantum wells

Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

2010-07-15

To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

International Nuclear Information System (INIS)

Li, Xiaohang; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D.

2015-01-01

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a pumping power density of 630 kW/cm 2 . Spectral deconvolution revealed superposition of a linearly amplified spontaneous emission peak at λ ∼ 257.0 nm with a full width at half maximum (FWHM) of ∼12 nm and a superlinearly amplified SE peak at λ ∼ 260 nm with a narrow FWHM of less than 2 nm. In particular, the wavelength of ∼260 nm is the shortest wavelength of surface SE from III-nitride MQW heterostructures to date. Atomic force microscopy and scanning transmission electron microscopy measurements were employed to investigate the material and structural quality of the AlGaN heterostructures, showing smooth surface and sharp layer interfaces. This study offers promising results for AlGaN heterostructures grown on sapphire substrates for the development of DUV vertical cavity surface emitting lasers (VCSELs)

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

Directory of Open Access Journals (Sweden)

Yu Kee Ooi

2015-05-01

Full Text Available Phosphor-free monolithic white light emitting diodes (LEDs based on InGaN/ InGaN multiple quantum wells (MQWs on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW and high external quantum efficiency (EQE (∼ 50%. The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28 with correlated color temperature (CCT of ∼ 8200 K at J = 50 A/cm2. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

Energy Technology Data Exchange (ETDEWEB)

Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu [Department of Electrical and Microelectronics Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)

2015-05-15

Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

Quantum wells for optical information processing

International Nuclear Information System (INIS)

Miller, D.A.B.

1989-01-01

Quantum wells, alternate thin layers of two different semiconductor materials, show an exceptional electric field dependence of the optical absorption, called the quantum-confined Stark effect (QCSE), for electric fields perpendicular to the layers. This enables electrically controlled optical modulators and optically controlled self-electro-optic-effect devices that can operate at high speed and low energy density. Recent developments in these QCSE devices are summarized, including new device materials and novel device structures. The variety of sophisticated devices now demonstrated is promising for applications to information processing

Zero field spin splitting in asymmetric quantum wells

International Nuclear Information System (INIS)

Hao Yafei

2012-01-01

Spin splitting of asymmetric quantum wells is theoretically investigated in the absence of any electric field, including the contribution of interface-related Rashba spin-orbit interaction as well as linear and cubic Dresselhaus spin-orbit interaction. The effect of interface asymmetry on three types of spin-orbit interaction is discussed. The results show that interface-related Rashba and linear Dresselhaus spin-orbit interaction can be increased and cubic Dresselhaus spin-orbit interaction can be decreased by well structure design. For wide quantum wells, the cubic Dresselhaus spin-orbit interaction dominates under certain conditions, resulting in decreased spin relaxation time.

O-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning

International Nuclear Information System (INIS)

Chaisakul, Papichaya; Marris-Morini, Delphine; Vakarin, Vladyslav; Vivien, Laurent; Frigerio, Jacopo; Chrastina, Daniel; Isella, Giovanni

2014-01-01

We report an O-band optical modulator from a Ge/Si 0.15 Ge 0.85 multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si 0.15 Ge 0.85 MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

Energy Technology Data Exchange (ETDEWEB)

Humphreys, C.J., E-mail: colin.humphreys@msm.cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Griffiths, J.T., E-mail: jg641@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Tang, F., E-mail: ft274@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Oehler, F., E-mail: fabrice.oehler@lpn.cnrs.fr [CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis (France); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Victoria 3800 (Australia); Zheng, C., E-mail: changlin.zheng@monash.edu [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Etheridge, J., E-mail: joanne.etheridge@mcem.monash.edu [Department of Materials Science and Engineering, Monash University, Victoria 3800 (Australia); Martin, T.L., E-mail: tomas.martin@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Bagot, P.A.J., E-mail: paul.bagot@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moody, M.P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Sutherland, D., E-mail: danny.sutherland@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S., E-mail: stefan.schulz@tyndall.ie [Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork (Ireland); and others

2017-05-15

Highlights: • We have studied the atomic structure of polar and non-polar InGaN quantum wells. • The non-polar (11-20) InGaN quantum wells contain indium-rich clusters, unlike the polar (0001) quantum wells. • The electrons and holes in the quantum wells are localised by different mechanisms. - Abstract: We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20 meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60 meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.

Characterization of interfaces in semimagnetic quantum wells

International Nuclear Information System (INIS)

Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G.

1995-01-01

The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd 1-x Mn x Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd 1-x Mn x /CdTe/Cd 1-y Mg y Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author)

Observation of suppressed Auger mechanism in type-I quantum well structures with delocalized electron-hole wavefunctions

Energy Technology Data Exchange (ETDEWEB)

Hassani Nia, Iman; Fathipour, Vala; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2015-08-15

We report the first observation of non-threshold Auger mechanism for a quantum well structure with Type-I band alignment. Excitation-dependent photoluminescence measurements were used to extract the Auger recombination coefficients from 77 K up to room temperature. The results verify the role of interface mediated momentum exchange as well as suppression of Auger recombination for delocalized electron-hole wavefunctions.

GaSb quantum rings in GaAs/Al{sub x}Ga{sub 1−x}As quantum wells

Energy Technology Data Exchange (ETDEWEB)

Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Robson, A. J.; Zhuang, Q. D. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Danos, L. [Department of Chemistry, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2016-01-28

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/Al{sub x}Ga{sub 1−x}As quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, single-particle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

Tunable localized surface plasmon resonances in one-dimensional h-BN/graphene/h-BN quantum-well structure

Science.gov (United States)

Kaibiao, Zhang; Hong, Zhang; Xinlu, Cheng

2016-03-01

The graphene/hexagonal boron-nitride (h-BN) hybrid structure has emerged to extend the performance of graphene-based devices. Here, we investigate the tunable plasmon in one-dimensional h-BN/graphene/h-BN quantum-well structures. The analysis of optical response and field enhancement demonstrates that these systems exhibit a distinct quantum confinement effect for the collective oscillations. The intensity and frequency of the plasmon can be controlled by the barrier width and electrical doping. Moreover, the electron doping and the hole doping lead to very different results due to the asymmetric energy band. This graphene/h-BN hybrid structure may pave the way for future optoelectronic devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 11474207 and 11374217) and the Scientific Research Fund of Sichuan University of Science and Engineering, China (Grant No. 2014PY07).

Quantum well lasers

CERN Document Server

Zory, Jr, Peter S; Kelley, Paul

1993-01-01

This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

International Nuclear Information System (INIS)

Ungan, F.

2011-01-01

In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schroedinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al x Ga 1-x As are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures. - Highlights: → The doping concentration has a great effect on the optical characteristics of these structures. → The structure parameters have a great effect on the optical properties of these structures. → The total absorption coefficients reduced as the incident optical intensity increases. → The RICs reduced as the incident optical intensity increases.

Some aspects of hydrogen plasma treatment of anti-modulation doped near surface GaAs/AlGaAs single quantum well structures

International Nuclear Information System (INIS)

Bumai, Yu.A.; Gobsch, G.; Goldhahn, R.; Stein, N.; Golombek, A.; Nakov, V.; Cheng, T.S.

1999-01-01

The MBE grown anti-modulation doped GaAs/AlGaAs structures with near surface single quantum wells were exposed to a DC hydrogen plasma (∼400 eV) and investigated using PL, PLE and PR spectroscopy at 5 K. Strong acceptor related free to bound transition (FB) dominates for quantum well related PL but excitonic features are still observed in PLE spectra. After hydrogen plasma treatment the PL intensity of FB transition from quantum well was strongly increased for above AlGaAs band gap excitation and was unchanged for below AlGaAs one. These results are consistent with atomic hydrogen passivation of deep defects in AlGaAs barriers. At the same time radiative excitonic recombination was quenched by hydrogenation. PLE and PR spectra indicate on a strong increase of electric field in subsurface region of the structure after hydrogenation. The increase of electric field in anti-modulation doped structure after hydrogen plasma treatment is supposed to be due to passivation by atomic hydrogen of surface states that leads to unpinning of Fermi level from mid gap to carbon acceptor level position in GaAs cap layer. It causes the further band bending and surface electric field increase that strongly suppress excitonic recombination in near surface quantum wells

Intersubband energies in strain-compensated InGaN/AlInN quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Park, Seoung-Hwan, E-mail: shpark@cu.ac.kr [Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk, 712-702 (Korea, Republic of); Ahn, Doyeol [Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul, Korea 130-743 (Korea, Republic of)

2016-01-15

Intersubband transition energies in the conduction band for strain-compensated InGaN/AlInN quantum well (QW) structures were investigated as a function of strain based on an effective mass theory with the nonparabolicity taken into account. In the case of an InGaN/AlInN QW structure lattice-matched to GaN, the wavelength is shown to be longer than 1.55 μm. On the other hand, strain-compensated QW structures show that the wavelength of 1.55 μm can be reached even for the QW structure with a relatively small strain of 0.3 %. Hence, the strain-compensated QW structures can be used for telecommunication applications at 1.55 μm with a small strain, compared to conventional GaN/AlN QW structure.

Trions in quantum wells

CERN Document Server

Peeters, F M; Varga, K

2002-01-01

The ground-state energy of three-particle systems consisting of electrons and holes as found in semiconducting quantum wells is studied. The degree of confinement is determined by the quantum-well width and we can vary the dimensionality of the system from two to three dimensions. The energy levels of the system can further be altered by the application of an external magnetic field which is directed perpendicular to the well. Refs.5 (author)

Two-dimensional electron gas in monolayer InN quantum wells

International Nuclear Information System (INIS)

Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

2014-01-01

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

Strong coupling and polariton lasing in Te based microcavities embedding (Cd,Zn)Te quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Piętka, B.; Król, M.; Mirek, R.; Lekenta, K.; Szczytko, J.; Borysiuk, J.; Suffczyński, J.; Kazimierczuk, T.; Goryca, M.; Smoleński, T.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland)

2015-11-16

We report on properties of an optical microcavity based on (Cd,Zn,Mg)Te layers and embedding (Cd,Zn)Te quantum wells. The key point of the structure design is the lattice matching of the whole structure to MgTe, which eliminates the internal strain and allows one to embed an arbitrary number of unstrained quantum wells in the microcavity. We evidence the strong light-matter coupling regime already for the structure containing a single quantum well. Embedding four unstrained quantum wells results in further enhancement of the exciton-photon coupling and the polariton lasing in the strong coupling regime.

In-Plane Magnetic Field Effect on the Transport Properties in a Quasi-3D Quantum Well Structure

International Nuclear Information System (INIS)

Brooks, J.; Clark, R.; Lumpkin, N.; O'Brien, J.; Reno, J.; Simmons, J.; Wang, Z.; Zhang, B.

1999-01-01

The transport properties of a quasi-three-dimensional, 200 layer quantum well structure are investigated at integer filling in the quantum Hall state. We find that the transverse magnetoresistance R xx , the Hall resistance R xy , and the vertical resistance R zz all follow a similar behavior with both temperature and in-plane magnetic field. A general feature of the influence of increasing in-plane field B in is that the Hall conductance quantization first improves, but above a characteristic value B C in , the quantization is systematically removed. We consider the interplay of the chid edge state transport and the bulk (quantum Hall) transport properties. This mechanism may arise from the competition of the cyclotron energy with the superlattice band structure energies. A comparison of the resuIts with existing theories of the chiral edge state transport with in-plane field is also discussed

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field

Energy Technology Data Exchange (ETDEWEB)

Balagula, R. M.; Vinnichenko, M. Ya.; Makhov, I. S.; Sofronov, A. N., E-mail: sofronov@rphf.spbstu.ru; Firsov, D. A.; Vorobjev, L. E. [Peter the Great St. Petersburg Polytechnic University (Russian Federation)

2017-03-15

The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index under a lateral electric field in the vicinity of the intersubband resonance are experimentally investigated.

Hopping mixed hybrid excitations in multiple composite quantum wire structures

International Nuclear Information System (INIS)

Nguyen Ba An; Tran Thai Hoa

1995-10-01

A structure consisting of N pairs of inorganic semiconductor and organic quantum wires is considered theoretically. In such an isolated pair of wires, while the intrawire coupling forms Wannier-Mott exciton in an inorganic semiconductor quantum wire and Frenkel exciton in an organic one, the interwire coupling gives rise to hybrid excitons residing within the pair. When N pairs of wires are packed together 2N new mixed hybrid modes appear that are the true elementary excitations and can hop throughout the whole structure. Energies and wave functions of such hopping mixed hybrid excitations are derived analytically in detail accounting for the global interwire coupling and the different polarization configurations. (author). 19 refs

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Energy Technology Data Exchange (ETDEWEB)

Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Vasilyeva, G. Yu.; Ivánov, Yu. L.; Zakhar’in, A. O.; Andrianov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Vorobiev, L. E.; Firsov, D. A. [Peter the Great Saint-Petersburg Polytechnic University (Russian Federation); Grigoriev, M. N. [Ustinov Baltic State Technical University “VOENMEKh” (Russian Federation); Antonov, A. V.; Ikonnikov, A. V.; Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-07-15

The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.

Radiative transitions in InGaN quantum-well structures

Energy Technology Data Exchange (ETDEWEB)

Shapiro, Noad Asaf [Univ. of California, Berkeley, CA (United States)

2002-01-01

InGaN based light emitting devices demonstrate excellent luminescence properties and have great potential in lighting applications. Though these devices are already being produced on an industrial scale, the nature of their radiative transition is still not well understood. In particular, the role of the huge (>1MV/cm), built-in electric field in these transitions is still under debate. The luminescence characteristics of InGaN quantum well structures were investigated as a function of excitation power, temperature, and biaxial strain, with an intent of discerning the effects of the electric field and inhomogeneous indium distribution in the QW on the radiative transition. It was found that the luminescence energy did not scale only with the indium concentration but that the QW thickness must also be taken into account. The thickness affects the transition energy due to quantum confinement and carrier separation across a potential drop in the QW. The luminescence peak width was shown to increase with increased indium fraction, due to increased indium inhomogeneity. The carrier lifetime increased exponentially with QW thickness and luminescence wavelength, due to increased carrier separation. Measuring the luminescence energy and carrier lifetime as a function of excitation density showed that the electric field can be screened by strong excitation and, as a consequence, the carrier separation reduced. The temperature dependence of the luminescence showed evidence for bandtails in the density of states, a phenomenon that has been previously related to transition in indium-rich nano-clusters, yet could be accounted for by fluctuations in other parameters that affect the transition energy. Room temperature luminescence efficiency was shown to weakly decrease with increased QW thickness. The application of biaxial strain resulted in either a redshift or blueshift of the luminescence, depending on the sample. The direction and magnitude of the shift in luminescence

Comment on 'Local responsivity in quantum well photodetectors'

International Nuclear Information System (INIS)

Ryzhii, M.; Khmyrova, I.

2001-01-01

The response of multiple quantum well (QW) infrared photodetectors (QW) to the photoexcitation of one QW selected from many identical QWs was recently modeled [M. Ershov, J. Appl. Phys. 86, 7059 (1999)]. We point out here that the presented analysis based on the use of drift-diffusion model for a system with a few electrons is incorrect. [copyright] 2001 American Institute of Physics

Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

Science.gov (United States)

Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

2000-01-01

The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

Characterization of interfaces in semimagnetic quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

1995-12-31

The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd{sub 1-x}Mn{sub x}Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd{sub 1-x}Mn{sub x}/CdTe/Cd{sub 1-y} Mg{sub y}Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author). 5 refs, 2 figs, 1 tab.

INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

NARCIS (Netherlands)

Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

1995-01-01

The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

Quantum internet using code division multiple access

Science.gov (United States)

Zhang, Jing; Liu, Yu-xi; Özdemir, Şahin Kaya; Wu, Re-Bing; Gao, Feifei; Wang, Xiang-Bin; Yang, Lan; Nori, Franco

2013-01-01

A crucial open problem inS large-scale quantum networks is how to efficiently transmit quantum data among many pairs of users via a common data-transmission medium. We propose a solution by developing a quantum code division multiple access (q-CDMA) approach in which quantum information is chaotically encoded to spread its spectral content, and then decoded via chaos synchronization to separate different sender-receiver pairs. In comparison to other existing approaches, such as frequency division multiple access (FDMA), the proposed q-CDMA can greatly increase the information rates per channel used, especially for very noisy quantum channels. PMID:23860488

Quantum A∞-structures for open-closed topological strings

International Nuclear Information System (INIS)

Herbst, M.

2006-02-01

We study factorizations of topological string amplitudes on higher genus Riemann surfaces with multiple boundary components and find quantum A ∞ -relations, which are the higher genus analog of the (classical) A ∞ -relations on the disk. For topological strings with c=3 the quantum A ∞ -relations are trivially satisfied on a single D-brane, whereas in a multiple D-brane configuration they may be used to compute open higher genus amplitudes recursively from disk amplitudes. This can be helpful in open Gromov-Witten theory in order to determine open string higher genus instanton corrections. Finally, we find that the quantum A ∞ -structure cannot quite be recast into a quantum master equation on the open string moduli space. (orig.)

Theoretical analysis of multiple quantum-well, slow-light devices under applied external fields using a fully analytical model in fractional dimension

Energy Technology Data Exchange (ETDEWEB)

Kohandani, R; Kaatuzian, H [Photonics Research Laboratory, Electrical Engineering Department, AmirKabir University of Technology, Hafez Ave., Tehran (Iran, Islamic Republic of)

2015-01-31

We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of 10{sup 5} is obtained at best. (slowing of light)

Quantum Optical Multiple Scattering

DEFF Research Database (Denmark)

Ott, Johan Raunkjær

. In the first part we use a scattering-matrix formalism combined with results from random-matrix theory to investigate the interference of quantum optical states on a multiple scattering medium. We investigate a single realization of a scattering medium thereby showing that it is possible to create entangled...... states by interference of squeezed beams. Mixing photon states on the single realization also shows that quantum interference naturally arises by interfering quantum states. We further investigate the ensemble averaged transmission properties of the quantized light and see that the induced quantum...... interference survives even after disorder averaging. The quantum interference manifests itself through increased photon correlations. Furthermore, the theoretical description of a measurement procedure is presented. In this work we relate the noise power spectrum of the total transmitted or reflected light...

Analysis of mode-hopping effect in Fabry–Pérot multiple-quantum well laser diodes via low frequency noise investigation

DEFF Research Database (Denmark)

Pralgauskaitė, Sandra; Palenskis, Vilius; Matukas, Jonas

2013-01-01

Comprehensive investigation of noise characteristics and radiation spectrum with special attention to the mode-hopping effect of Fabry–Pérot (FP) multiple quantum well laser diodes (LDs) have been carried out: laser radiation spectra, optical and electrical fluctuations and cross-correlation factor...... between them have been measured under stable and mode-hopping operation. At the mode-hopping that occurs at particular operation conditions (injection current and temperature) LD radiation spectrum is unstable in time, very intensive and highly correlated Lorentzian-type optical and electrical...

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

International Nuclear Information System (INIS)

Lee, Ko-Hsin; Thomas, Kevin; Gocalinska, Agnieszka; Manganaro, Marina; Corbett, Brian; Pelucchi, Emanuele; Peters, Frank H.

2012-01-01

We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN x dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 °C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.

Geometry effect on energy transfer rate in a coupled-quantum-well structure: nonlinear regime

International Nuclear Information System (INIS)

Salavati-fard, T; Vazifehshenas, T

2014-01-01

We study theoretically the effect of geometry on the energy transfer rate at nonlinear regime in a coupled-quantum-well system using the balance equation approach. To investigate comparatively the effect of both symmetric and asymmetric geometry, different structures are considered. The random phase approximation dynamic dielectric function is employed to include the contributions from both quasiparticle and plasmon excitations. Also, the short-range exchange interaction is taken into account through the Hubbard approximation. Our numerical results show that the energy transfer rate increases by increasing the well thicknesses in symmetric structures. Furthermore, by increasing spatial asymmetry, the energy transfer rate decreases for the electron temperature range of interest. From numerical calculations, it is obtained that the nonlinear energy transfer rate is proportional to the square of electron drift velocity in all structures and also, found that the influence of Hubbard local field correction on the energy transfer rate gets weaker by increasing the strength of applied electric field. (paper)

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

Science.gov (United States)

Monavarian, Morteza; Rosales, Daniel; Gil, Bernard; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED

Science.gov (United States)

Meel, K.; Mahala, P.; Singh, S.

2018-03-01

This paper presents the optimization of the multi-quantum well based Light Emitting Diode (LED) structure. We investigate the electrical and optical properties of the device on several factors like well width, barrier width, the number of quantum wells and then optimize the structure. The device is optimized for a well width and barrier width of 3nm and 6nm respectively, consisting of five quantum wells. Simulations were carried out using Silvaco ATLAS TCAD simulation program (Silvaco International, USA). The optimized structure was grown by MOCVD and fabricated. The I-V characteristic was also measured.

Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

International Nuclear Information System (INIS)

Lee, Sung-Nam; Paek, H.S.; Son, J.K.; Sakong, T.; Yoon, E.; Nam, O.H.; Park, Y.

2006-01-01

We investigated that the surface morphology of GaN epilayers was significantly affected by the surface tilt orientation of GaN substrate. Surface morphologies of GaN epilayers on GaN substrates show three types: mirror, wavy, and hillock. These surface morphologies are dependent on the surface orientation of GaN substrates. It is found that the hillock morphology of GaN epilayer was formed on the GaN substrate with surface tilt orientation less than 0.1 o . As the surface tilt angle increased to 0.35 o , the surface morphology varied from hillock to wavy morphology. Above a surface tilt angle of 0.4 o , surface morphology changed to the mirror-like type morphology. Additionally, these three types of GaN surface morphology also affected the optical quality of GaN epilayers as well as InGaN multiple quantum wells on GaN substrates by non-uniform In incorporation on the different surface morphologies of GaN epilayers

Coherent manipulation of spontaneous emission spectra in coupled semiconductor quantum well structures.

Science.gov (United States)

Chen, Aixi

2014-11-03

In triple coupled semiconductor quantum well structures (SQWs) interacting with a coherent driving filed, a coherent coupling field and a weak probe field, spontaneous emission spectra are investigated. Our studies show emission spectra can easily be manipulated through changing the intensity of the driving and coupling field, detuning of the driving field. Some interesting physical phenomena such as spectral-line enhancement/suppression, spectral-line narrowing and spontaneous emission quenching may be obtained in our system. The theoretical studies of spontaneous emission spectra in SQWS have potential application in high-precision spectroscopy. Our studies are based on the real physical system [Appl. Phys. Lett.86(20), 201112 (2005)], and this scheme might be realizable with presently available techniques.

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Zybert, M. [Univ. of Rzeszow, Pigonia (Poland); Marchweka, M. [Univ. of Rzeszow, Pigonia (Poland); Sheregii, E. M. [Center for Microelectronics and Nanotechnology, University of Rzeszow; Rickel, Dwight Gene [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Betts, Jonathan Bobby [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Balakirev, Fedor Fedorovich [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Gordon, Michael Joseph [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Stier, Andreas V. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Mielke, Charles H. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pfeffer, P. [Polish Academy of Sciences (PAS), Warsaw (Poland); Zawadski, W. [Polish Academy of Sciences (PAS), Warsaw (Poland)

2017-03-06

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The 14 x 14 P.p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed mengeto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

Toward structural dynamics: protein motions viewed by chemical shift modulations and direct detection of C'N multiple-quantum relaxation.

Science.gov (United States)

Mori, Mirko; Kateb, Fatiha; Bodenhausen, Geoffrey; Piccioli, Mario; Abergel, Daniel

2010-03-17

Multiple quantum relaxation in proteins reveals unexpected relationships between correlated or anti-correlated conformational backbone dynamics in alpha-helices or beta-sheets. The contributions of conformational exchange to the relaxation rates of C'N coherences (i.e., double- and zero-quantum coherences involving backbone carbonyl (13)C' and neighboring amide (15)N nuclei) depend on the kinetics of slow exchange processes, as well as on the populations of the conformations and chemical shift differences of (13)C' and (15)N nuclei. The relaxation rates of C'N coherences, which reflect concerted fluctuations due to slow chemical shift modulations (CSMs), were determined by direct (13)C detection in diamagnetic and paramagnetic proteins. In well-folded proteins such as lanthanide-substituted calbindin (CaLnCb), copper,zinc superoxide dismutase (Cu,Zn SOD), and matrix metalloproteinase (MMP12), slow conformational exchange occurs along the entire backbone. Our observations demonstrate that relaxation rates of C'N coherences arising from slow backbone dynamics have positive signs (characteristic of correlated fluctuations) in beta-sheets and negative signs (characteristic of anti-correlated fluctuations) in alpha-helices. This extends the prospects of structure-dynamics relationships to slow time scales that are relevant for protein function and enzymatic activity.

Intensity dependent absorption bleaching of high subband excitons in GaAs/AlGaAs multiple quantum wells

CERN Document Server

Shin, S H; Lee, E H; Chae, K M; Park, S H; Kim, U

1998-01-01

We have investigated the influence of carrier generation on the absorption bleaching of the n=2 and n=3 excitons in GaAs/AlGaAs multiple quantum wells (MQWs). With the excitation near the resonance of the n=1 exciton absorption, the long range coulomb screening and collision broadening had significant effects on the exciton bleaching. At low excitation intensity, the absorption bleaching of the n=2 exciton in 75 A-thick MQWs and that of the n=3 exciton in 150 A-thick MQWs were due to linewidth broadening by the collision broadening effect only. At high excitation intensity, however, the reduction of oscillator strength due to the long range coulomb screening contributed dominantly to absorption bleaching.

[Optical and electrical properties of NPB/Alq3 organic quantum well].

Science.gov (United States)

Huang, Jin-Zhao; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Wang, Yong

2007-04-01

In the present paper, the organic quantum-well device similar to the type-II quantum well of inorganic semiconductor material was prepared by heat evaporation. NPB (N, N'-di-[(1-naphthalenyl)-N, N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine) and Alq3 (Tris-(8-quinolinolato) aluminum) act as the potential barrier layer and the potential well layer respectively. Besides, the single layer structure of Alq3 was prepared. In the experiments, the Forster nonradiative resonant energy transfer from the barrier layer to the well layer was identified, and the quantum well luminescence device possesses a favorable current-voltage property. The narrowing of spectrum was observed, and the spectrum shifted to blue region continuously when the applied voltage increased.

Bound states in continuum: Quantum dots in a quantum well

Energy Technology Data Exchange (ETDEWEB)

Prodanović, Nikola, E-mail: elnpr@leeds.ac.uk [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade (Serbia); Ikonić, Zoran; Indjin, Dragan; Harrison, Paul [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom)

2013-11-01

We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.

Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells

International Nuclear Information System (INIS)

Sun, Q.; Zhang, J.C.; Huang, Y.; Chen, J.; Wang, J.F.; Wang, H.; Li, D.Y.; Wang, Y.T.; Zhang, S.M.; Yang, H.; Zhou, C.L.; Guo, L.P.; Jia, Q.J.

2006-01-01

Both cracked and crack-free GaN/Al 0.55 Ga 0.45 N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of ω-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample

Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

International Nuclear Information System (INIS)

Loudon, A.Y.

2002-01-01

Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

Recent Developments in Quantum-Well Infrared Photodetectors

Science.gov (United States)

Gunapala, S. D.; Bandara, K. M. S. V.

1995-01-01

Intrinsic infrared (IR) detectors in the long wavelength range (8-20 Am) are based on an optically excited interband transition, which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band as shown. These photoelectrons can be collected efficiently, thereby producing a photocurrent in the external circuit. Since the incoming photon has to promote an electron from the valence band to the conduction band, the energy of the photon (h(sub upsilon)) must be higher than the E(sub g) of the photosensitive material. Therefore, the spectral response of the detectors can be controlled by controlling the E(sub g) of the photosensitive material. Examples for such materials are Hg(1-x), Cd(x), Te, and Pb(1-x), Sn(x), Te, in which the energy gap can be controlled by varying x. This means detection of very-long-wavelength IR radiation up to 20 microns requires small band gaps down to 62 meV. It is well known that these low band gap materials, characterized by weak bonding and low melting points, are more difficult to grow and process than large-band gap semiconductors such as GaAs. These difficulties motivate the exploration of utilizing the intersub-band transitions in multiquantum well (MQW) structures made of more refractory large-band gap semiconductors. The idea of using MQW structures to detect IR radiation can be explained by using the basic principles of quantum mechanics. The quantum well is equivalent to the well-known particle in a box problem in quantum mechanics, which can be solved by the time independent Schroudiner equation.

Multiple quantum collapse of the inflaton field and its implications on the birth of cosmic structure

Energy Technology Data Exchange (ETDEWEB)

Leon, Gabriel [Instituto de Ciencias Nucleares, Universidad Nacional Autonoma de Mexico, Mexico DF 04510 (Mexico); De Unanue, Adolfo [C3 Centro de Ciencias de la Complejidad, Universidad Nacional Autonoma de Mexico, Torre de IngenierIa, Circuito Exterior S/N Ciudad Universitaria, Mexico DF 04510 (Mexico); Sudarsky, Daniel, E-mail: gabriel.leon@nucleares.unam.mx, E-mail: adolfo@nucleares.unam.mx, E-mail: sudarsky@nucleares.unam.mx [Instituto de AstronomIa y Fisica del Espacio (UBA-CONICET), Casilla de Correos 67, Sucursal 28, 1428 Buenos Aires (Argentina)

2011-08-07

The standard inflationary account for the origin of cosmic structure is, without a doubt, extremely successful. However, it is not fully satisfactory as has been argued in Perez et al (2006 Class. Quantum Grav. 23 2317). The central point is that, in the standard accounts, the inhomogeneity and anisotropy of our universe seem to emerge, unexplained, from an exactly homogeneous and isotropic initial state through processes that do not break those symmetries. The proposal made there to address this shortcoming calls for a dynamical and self-induced quantum collapse of the original homogeneous and isotropic state of the inflaton. In this paper, we consider the possibility of a multiplicity of collapses in each one of the modes of the quantum field. As we will see, the results are sensitive to a more detailed characterization of the collapse than those studied in the previous works, and in this regard two simple options will be studied. We find important constraints on the model, most remarkably on the number of possible collapses for each mode.

Thermal activation of carriers from semiconductor quantum wells

International Nuclear Information System (INIS)

Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.

1999-01-01

Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells

Optical properties of the Tietz-Hua quantum well under the applied external fields

Science.gov (United States)

Kasapoglu, E.; Sakiroglu, S.; Ungan, F.; Yesilgul, U.; Duque, C. A.; Sökmen, I.

2017-12-01

In this study, the effects of the electric and magnetic fields as well as structure parameter- γ on the total absorption coefficient, including linear and third order nonlinear absorption coefficients for the optical transitions between any two subband in the Tietz-Hua quantum well have been investigated. The optical transitions were investigated by using the density matrix formalism and the perturbation expansion method. The Tietz-Hua quantum well becomes narrower (wider) when the γ - structure parameter increases (decreases) and so the energies of the bound states will be functions of this parameter. Therefore, we can provide the red or blue shift in the peak position of the absorption coefficient by changing the strength of the electric and magnetic fields as well as the structure parameters and these results can be used to adjust and control the optical properties of the Tietz-Hua quantum well.

Charge confinements in CdSe-ZnSe symmetric double quantum wells

International Nuclear Information System (INIS)

Tit, Nacir; Obaidat, Ihab M

2008-01-01

The bound states in the (CdSe) N w (ZnSe) N b (CdSe) N w -ZnSe(001) symmetric double quantum wells are investigated versus the well width (N w ) and the barrier thickness (N b ). A calculation based on the sp 3 s * tight-binding method which includes the spin-orbit interactions is employed to calculate the bandgap energy, quantum-confinement energy, and band structures. The studied systems possess a vanishing valence-band offset (VBO = 0) in consistency with the well known common-anion rule, and a large conduction-band offset (CBO ≅ 1 eV), which plays an essential role in the confinement of electrons within the CdSe wells. The biaxial strain, on the other hand, plays another role in confining the holes at the interfaces (within the well regions) and thus enhancing the radiative efficiency. The induced-strain energy is estimated to be ∼35 meV. More importantly, the results show that, for a fixed barrier thickness, the double wells are able to confine a pair of bound states when they are very thin. By increasing the wells' width (N w ), further, a new pair of states from the conduction-band continuum falls into the wells every time N w hits a multiple of four monolayers (more specifically, for 4n w ≤4(n+1), the number of bound states is 2(n+1), where n is an integer). On the other hand, the barrier thickness (N b ) is shown to have no effect on the number of bound states, but it solely controls their well-to-well interactions. A critical barrier thickness to switch off these latter interactions is estimated to occur at about N crit b ≅ 9 (L crit b ≅ 25∼AA. Rules governing the variation of the quantum-confinement energy versus both barrier thickness (N b ) and well width (N w ) have been derived. Our theoretical results are also shown to have excellent agreement with the available experimental photoluminescence data

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Liu, Wei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhao, De Gang, E-mail: dgzhao@red.semi.ac.cn; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2015-11-15

The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

International Nuclear Information System (INIS)

Liu, Wei; Zhao, De Gang; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei; Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui

2015-01-01

The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed

Multiple network alignment on quantum computers

Science.gov (United States)

Daskin, Anmer; Grama, Ananth; Kais, Sabre

2014-12-01

Comparative analyses of graph-structured datasets underly diverse problems. Examples of these problems include identification of conserved functional components (biochemical interactions) across species, structural similarity of large biomolecules, and recurring patterns of interactions in social networks. A large class of such analyses methods quantify the topological similarity of nodes across networks. The resulting correspondence of nodes across networks, also called node alignment, can be used to identify invariant subgraphs across the input graphs. Given graphs as input, alignment algorithms use topological information to assign a similarity score to each -tuple of nodes, with elements (nodes) drawn from each of the input graphs. Nodes are considered similar if their neighbors are also similar. An alternate, equivalent view of these network alignment algorithms is to consider the Kronecker product of the input graphs and to identify high-ranked nodes in the Kronecker product graph. Conventional methods such as PageRank and HITS (Hypertext-Induced Topic Selection) can be used for this purpose. These methods typically require computation of the principal eigenvector of a suitably modified Kronecker product matrix of the input graphs. We adopt this alternate view of the problem to address the problem of multiple network alignment. Using the phase estimation algorithm, we show that the multiple network alignment problem can be efficiently solved on quantum computers. We characterize the accuracy and performance of our method and show that it can deliver exponential speedups over conventional (non-quantum) methods.

Optical manifestation of magnetoexcitons in near-surface quantum wells

Energy Technology Data Exchange (ETDEWEB)

Flores-Desirena, B.; Perez-Rodriguez, F

2003-05-15

The optical response of excitons in quantum wells, close to the sample boundary and under the action of a strong magnetic field perpendicular to their plane, is investigated theoretically. Solving the system of coupled equations for the coherent electron-hole interband amplitude and the electromagnetic field, reflectivity spectra for such nanostructures are calculated. The effect of the interaction of magnetoexcitons with the sample surface on the resonance structure of reflectivity spectra is analyzed. These optical spectra are also affected by the phase change of the electromagnetic wave as it propagates in the cap layer, overlying the quantum well.

Selectivity in multiple quantum nuclear magnetic resonance

International Nuclear Information System (INIS)

Warren, W.S.

1980-11-01

The observation of multiple-quantum nuclear magnetic resonance transitions in isotropic or anisotropic liquids is shown to give readily interpretable information on molecular configurations, rates of motional processes, and intramolecular interactions. However, the observed intensity of high multiple-quantum transitions falls off dramatically as the number of coupled spins increases. The theory of multiple-quantum NMR is developed through the density matrix formalism, and exact intensities are derived for several cases (isotropic first-order systems and anisotropic systems with high symmetry) to shown that this intensity decrease is expected if standard multiple-quantum pulse sequences are used. New pulse sequences are developed which excite coherences and produce population inversions only between selected states, even though other transitions are simultaneously resonant. One type of selective excitation presented only allows molecules to absorb and emit photons in groups of n. Coherent averaging theory is extended to describe these selective sequences, and to design sequences which are selective to arbitrarily high order in the Magnus expansion. This theory and computer calculations both show that extremely good selectivity and large signal enhancements are possible

Selectivity in multiple quantum nuclear magnetic resonance

Energy Technology Data Exchange (ETDEWEB)

Warren, Warren Sloan [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

1980-11-01

The observation of multiple-quantum nuclear magnetic resonance transitions in isotropic or anisotropic liquids is shown to give readily interpretable information on molecular configurations, rates of motional processes, and intramolecular interactions. However, the observed intensity of high multiple-quantum transitions falls off dramatically as the number of coupled spins increases. The theory of multiple-quantum NMR is developed through the density matrix formalism, and exact intensities are derived for several cases (isotropic first-order systems and anisotropic systems with high symmetry) to shown that this intensity decrease is expected if standard multiple-quantum pulse sequences are used. New pulse sequences are developed which excite coherences and produce population inversions only between selected states, even though other transitions are simultaneously resonant. One type of selective excitation presented only allows molecules to absorb and emit photons in groups of n. Coherent averaging theory is extended to describe these selective sequences, and to design sequences which are selective to arbitrarily high order in the Magnus expansion. This theory and computer calculations both show that extremely good selectivity and large signal enhancements are possible.

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

Energy Technology Data Exchange (ETDEWEB)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca; Durand, Christophe; Monroy, Eva; Eymery, Joël, E-mail: joel.eymery@cea.fr [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS group “Nanophysique et semiconducteurs”, CEA-INAC-PHELIQS, 17 av. des Martyrs, 38054 Grenoble (France); Bougerol, Catherine [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS group “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 av. des Martyrs, 38042 Grenoble (France)

2016-04-18

We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

Deterministically entangling multiple remote quantum memories inside an optical cavity

Science.gov (United States)

Yan, Zhihui; Liu, Yanhong; Yan, Jieli; Jia, Xiaojun

2018-01-01

Quantum memory for the nonclassical state of light and entanglement among multiple remote quantum nodes hold promise for a large-scale quantum network, however, continuous-variable (CV) memory efficiency and entangled degree are limited due to imperfect implementation. Here we propose a scheme to deterministically entangle multiple distant atomic ensembles based on CV cavity-enhanced quantum memory. The memory efficiency can be improved with the help of cavity-enhanced electromagnetically induced transparency dynamics. A high degree of entanglement among multiple atomic ensembles can be obtained by mapping the quantum state from multiple entangled optical modes into a collection of atomic spin waves inside optical cavities. Besides being of interest in terms of unconditional entanglement among multiple macroscopic objects, our scheme paves the way towards the practical application of quantum networks.

Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells

Energy Technology Data Exchange (ETDEWEB)

Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw (Poland); Kaminska, Agata; Suchocki, Andrzej; Kozanecki, Adrian [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Birner, Stefan [nextnano GmbH, Südmährenstr. 21, 85586 Poing (Germany); Young, Toby D. [Institute of Fundamental Technological Research, Polish Academy of Sciences, ul. Pawińskiego, 5b, 02-106 Warsaw (Poland)

2016-06-07

We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gap pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of the built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

Science.gov (United States)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Effective one-band approach for the spin splittings in quantum wells

Science.gov (United States)

Alekseev, P. S.; Nestoklon, M. O.

2017-03-01

The spin-orbit interaction of two-dimensional electrons in quantum wells grown from the III-V semiconductors consists of two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the bulk spin-orbit Hamiltonian which reflects the Td symmetry of the zincblende lattice. While it is known that the quantum well interfaces may also contribute to the Dresselhaus term, the exact structure and relative importance of the interface and bulk contributions are not well understood. To deal with this problem, we perform tight-binding calculations of the spin splittings of the electron levels in [100] GaAs/AlGaAs quantum wells. We show that the obtained spin splittings can be adequately described within the one-band electron Hamiltonian containing, together with the bulk contribution, the two interface contributions to the Dresselhaus term. The magnitude of the interface contribution to the spin-orbit interaction for sufficiently narrow quantum wells is of the same order as the bulk contribution.

Secure Multiparty Quantum Computation for Summation and Multiplication.

Science.gov (United States)

Shi, Run-hua; Mu, Yi; Zhong, Hong; Cui, Jie; Zhang, Shun

2016-01-21

As a fundamental primitive, Secure Multiparty Summation and Multiplication can be used to build complex secure protocols for other multiparty computations, specially, numerical computations. However, there is still lack of systematical and efficient quantum methods to compute Secure Multiparty Summation and Multiplication. In this paper, we present a novel and efficient quantum approach to securely compute the summation and multiplication of multiparty private inputs, respectively. Compared to classical solutions, our proposed approach can ensure the unconditional security and the perfect privacy protection based on the physical principle of quantum mechanics.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

Science.gov (United States)

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2003-01-01

-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

Quantum correlation approach to criticality in the XX spin chain with multiple interaction

Energy Technology Data Exchange (ETDEWEB)

Cheng, W.W., E-mail: weien.cheng@gmail.com [Institute of Signal Processing and Transmission, Nanjing University of Posts and Telecommunication, Nanjing 210003 (China); Department of Physics, Hubei Normal University, Huangshi 435002 (China); Key Lab of Broadband Wireless Communication and Sensor Network Technology, Ministry of Education (China); Shan, C.J. [Department of Physics, Hubei Normal University, Huangshi 435002 (China); Sheng, Y.B.; Gong, L.Y.; Zhao, S.M. [Institute of Signal Processing and Transmission, Nanjing University of Posts and Telecommunication, Nanjing 210003 (China); Key Lab of Broadband Wireless Communication and Sensor Network Technology, Ministry of Education (China)

2012-09-01

We investigate the quantum critical behavior in the XX spin chain with a XZY-YZX type multiple interaction by means of quantum correlation (Concurrence C, quantum discord D{sub Q} and geometric discord D{sub G}). Around the critical point, the values of these quantum correlations and corresponding derivatives are investigated numerically and analytically. The results show that the non-analyticity property of the concurrence cannot signal well the quantum phase transition, but both the quantum discord and geometric discord can characterize the critical behavior in such model exactly.

Measurement of Effective Drift Velocities of Electrons and Holes in Shallow Multiple Quantum Well P-I Modulators

Science.gov (United States)

Yang, Ching-Mei

1995-01-01

P-i-n diodes containing multiple quantum wells (MQWs) in the i-region are the building blocks for photonic devices. When we apply electric field across these devices and illuminate it with light, photo-carriers are created in the i-region. These carriers escape from the wells and drift toward the electrodes; thus photo-voltage is created. The rise- and decay-times of photo-voltages are related to the transport of carriers. In this dissertation, we present theoretical and experimental studies on carrier transport mechanisms of three shallow MQW GaAs/Al _{x}Ga_{1-x}As p-i-n diodes (x = 0.02, 0.04, 0.08) at various bias voltages. We start with the description of the sample structures and their package. We then present the characteristics of these samples including their transmission spectra and responsivity. We will demonstrate that the over-all high quality of these samples, including a strong exciton resonant absorption, ~100% internal quantum efficiencies and completely depleted i-region at bias between +0.75 V to -5 V bias. In our theoretical studies, we first discuss the possible carrier sweep-out mechanisms and estimate the response times associated with these mechanisms. Based on our theoretical model, we conclude that only the drift times of carriers and enhanced diffusion times are important for shallow MQW p-i-n diodes: at high bias, the fast drift times of electrons and holes control the rise-times; at low bias, the slow drift times of holes and the enhanced diffusion times control the decay-times. We have performed picosecond time-resolved pump/probe electro-absorption measurements on these samples. We then obtained the drift times, effective drift velocities and effective mobilities of electrons and holes for these devices. We find that the carrier effective drift velocities (especially for holes) seemed insensitive to the Al concentration in the barriers (in the range of x = 2% to 8%), even though the x = 2% sample does show an overall faster response

Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well

International Nuclear Information System (INIS)

Zhong Qinghu; Lai Liping

2013-01-01

Electron Raman scattering (ERS) is investigated in a spherical HgS/CdS quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. (semiconductor physics)

Investigation of the non-square InGaAsP/InP quantum wells in the electric field by photoreflectance

International Nuclear Information System (INIS)

Kudrawiec, R.; Sek, G.; Rudno-Rudzinski, W.; Misiewicz, J.; Wojcik, J.; Robinson, B.J.; Thompson, D.A.; Mascher, P.

2002-01-01

Non-square quantum wells in electric field have been investigated by photoreflectance and photoluminescence spectroscopies. The structures have been obtained by a post-growth modification (rapid thermal annealing) of standard 1.55 μm InGaAsP-based laser structures that have grown by gas molecular beam epitaxy. During rapid thermal annealing a migration of semiconductor atoms across quantum well interfaces changes the quantum well profile from a square well to rounded well. The modification of the profile changes energy levels in the quantum wells and in consequence a blue shift of the quantum well emission peak is observed in photoluminescence. In this paper the blue shift of the ground state transition of post-growth modified quantum well structures has been investigated by both photoluminescence and photoreflectance techniques. Also a blue shift of excited state transitions has been observed in photoreflectance spectra. Generally, a stronger blue shift for the ground state transition than for excited state transitions has been observed. Additionally, oscillator strengths for all quantum well transitions have been determined from photoreflectance spectra. It has been found that the oscillator strength is constant for all quantum well transitions despite of modification of the quantum well profile. (author)

Photoluminescence efficiency in AlGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

2014-11-15

Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

Weak antilocalization and spin precession in quantum wells

Science.gov (United States)

Knap, W.; Skierbiszewski, C.; Zduniak, A.; Litwin-Staszewska, E.; Bertho, D.; Kobbi, F.; Robert, J. L.; Pikus, G. E.; Pikus, F. G.; Iordanskii, S. V.; Mosser, V.; Zekentes, K.; Lyanda-Geller, Yu. B.

1996-02-01

The results of magnetoconductivity measurements in GaxIn1-xAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed that takes into account both linear and cubic in electron wave-vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms that appear when the well itself is asymmetric. It is established that, unlike spin-relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation [(0.98-1.85)×1012 cm-2 ] all three contributions are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin-relaxation in quantum wells and to improve the accuracy of determination of spin-splitting parameters in A3B5 crystals and two-dimensional structures.

Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

International Nuclear Information System (INIS)

García-Cervantes, H.; Rodríguez-Vargas, I.

2014-01-01

We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n 2DA and n 2DB , and the same well width. The Thomas-Fermi approximation, the semi-empirical sp 3 s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures

Selfsimilar and fractal analysis of n-type delta-doped quasiregular GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

García-Cervantes, H.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

2014-05-15

We study the electronic structure of n-type delta-doped quantum wells in GaAs in which the multiple well system is built according to the Fibonacci sequence. The building blocks A and B correspond to delta-doped wells with impurities densities n{sub 2DA} and n{sub 2DB}, and the same well width. The Thomas-Fermi approximation, the semi-empirical sp{sub 3}s* tight-binding model including spin, the Surface Green Function Matching method and the Transfer Matrix approach were implemented to obtain the confining potential, the electronic structure and the selfsimilarity of the spectrum. The fragmentation of the electronic spectra is observed whenever the building blocks A and B interact and it increases as the difference of impurities density between A and B increases as well. The wave function of the first sate of the fragmented bands presents critical characteristics, this is, it is not a localized state nor a extended one as well as it has selfsimilar features. So, the quasiregular characteristics are preserved irrespective of the complexity of the system and can affect the performance of devices based on these structures.

Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

2016-05-03

This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

Science.gov (United States)

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

International Nuclear Information System (INIS)

Wang, Yongjin; Zhu, Guixia; Gao, Xumin; Yang, Yongchao; Yuan, Jialei; Shi, Zheng; Zhu, Hongbo; Cai, Wei

2016-01-01

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges

Energy Technology Data Exchange (ETDEWEB)

O' Malley, S.M.; Bonanno, P.L.; Sirenko, A.A. [Department of Physics, New Jersey Institute of Technology, Newark, NJ (United States); Wunderer, T.; Brueckner, P.; Neubert, B.; Scholz, F. [Institute of Optoelectronics, Ulm University, Ulm (Germany); Kazimirov, A. [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY (United States)

2008-07-01

The structural properties of InGaN/GaN multiple quantum wells (MQW) were studied using synchrotron based high resolution X-ray diffraction (HRXRD). MQW structures were grown on the top and sidewall facets of triangular and trapezoidal shaped GaN ridges by metalorganic vapour phase epitaxy (MOVPE) in the regime of selective area growth (SAG). Period and strain variations as a function of oxide mask width were determined for both the sidewall and the top facet growth. Oxide mask widths ranged between 2 and 20 {mu}m with openings between adjacent masks of 4 and 6 {mu}m. Analysis of the X-ray diffraction curves revealed a sidewall/vertical growth rate ratio of {proportional_to}0.3 through a comparison of the top to sidewall facet MQW periods. Masks orientated along the left angle 11-20 right angle crystallographic direction showed stronger growth enhancement along with large global strain for MQW growth on the top (0001) plane. Interpreting our results within the framework of vapour phase diffusion revealed that inter-facet migration of group-III species needs to be taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The over-barrier resonant states and multi-channel scattering by a quantum well

Directory of Open Access Journals (Sweden)

Alexander F. Polupanov

2008-06-01

Full Text Available We demonstrate an explicit numerical method for accurate calculation ofthe analytic continuation of the scattering matrix, describing the multichannelscattering by a quantum well, to the unphysical region of complexvalues of the energy. Results of calculations show that one or severalpoles of the S-matrix exist, corresponding to the over-barrier resonantstates that are critical for the effect of the absolute reflection at scatteringof the heavy hole by a quantum well in the energy range where only theheavy hole may propagate over barriers in a quantum-well structure.Light- and heavy-hole states are described by the Luttinger Hamiltonianmatrix. The qualitative behaviour of the over-barrier scattering andresonant states is the same at variation of the shape of the quantum-wellpotential, however lifetimes of resonant states depend drastically on theshape and depth of a quantum well.

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Czech Academy of Sciences Publication Activity Database

Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Dominec, Filip; Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.

2017-01-01

Roč. 464, Apr (2017), s. 206-210 ISSN 0022-0248 R&D Projects: GA MŠk LM2015087; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Well-defined azazirconacyclopropane complexes supported on silica structurally determined by 2D NMR comparative elucidation

KAUST Repository

El Eter, Mohamad; Hamzaoui, Bilel; Abou-Hamad, Edy; Pelletier, Jeremie; Basset, Jean-Marie

2013-01-01

Grafting of Zr(NMe2)4 on mesoporous silica SBA-15 afforded selectively well-defined surface species SiOZr(NMe2) (η2NMeCH2). 2D solid-state NMR (1H- 13C HETCOR, Multiple Quantum) experiments have shown a unique structural rearrangement occurring on the immobilised zirconium bis methylamido ligand. © The Royal Society of Chemistry 2013.

Scintillation properties of (C sub 6 H sub 1 sub 3 NH sub 3) sub 2 PbI sub 4 Exciton luminescence of an organic/inorganic multiple quantum well structure compound induced by 2.0 MeV protons

CERN Document Server

Shibuya, K; Takeoka, Y; Asai, K

2002-01-01

We report a new type of scintillator especially suitable for pulse-radiation detection. Thin films of organic/inorganic perovskite compound (n-C sub 6 H sub 1 sub 3 NH sub 3) sub 2 PbI sub 4 , which is characterized by a multiple quantum well structure, were bombarded by 2.0 MeV protons, and their radiation-induced emission spectra were obtained. A single and sharp emission peak due to an exciton was observed at the wavelength of 524 nm. This emission was clearly detected even at room temperature, and its quantum efficiency was very high. The line shape of this emission did not change, retaining its sharpness, and no other emissions appeared throughout the irradiation. The optical response of (n-C sub 6 H sub 1 sub 3 NH sub 3) sub 2 PbI sub 4 is very fast. (n-C sub 6 H sub 1 sub 3 NH sub 3) sub 2 PbI sub 4 is a promising scintillator material, meeting requirements not satisfied by conventional scintillators.

Continuous-wave spatial quantum correlations of light induced by multiple scattering

DEFF Research Database (Denmark)

Smolka, Stephan; Ott, Johan Raunkjær; Huck, Alexander

2012-01-01

and reflectance. Utilizing frequency-resolved quantum noise measurements, we observe that the strength of the spatial quantum correlation function can be controlled by changing the quantum state of an incident bright squeezed-light source. Our results are found to be in excellent agreement with the developed......We present theoretical and experimental results on spatial quantum correlations induced by multiple scattering of nonclassical light. A continuous-mode quantum theory is derived that enables determining the spatial quantum correlation function from the fluctuations of the total transmittance...... theory and form a basis for future research on, e. g., quantum interference of multiple quantum states in a multiple scattering medium....

Nonadditivity of quantum capacities of quantum multiple-access channels and the butterfly network

International Nuclear Information System (INIS)

Huang Peng; He Guangqiang; Zhu Jun; Zeng Guihua

2011-01-01

Multipartite quantum information transmission without additional classical resources is investigated. We show purely quantum superadditivity of quantum capacity regions of quantum memoryless multiple-access (MA) channels, which are not entanglement breaking. Also, we find that the superadditivity holds when the MA channel extends to the quantum butterfly network, which can achieve quantum network coding. The present widespread effects for the channels which enable entanglement distribution have not been revealed for multipartite scenarios.

The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

International Nuclear Information System (INIS)

Selvig, E; Myrvaagnes, G; Bugge, R; Haakenaasen, R; Fimland, B O

2006-01-01

Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed to Sb x (x=1, 2) and As 2 fluxes. The structures have been studied using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL). The As content in the interface layers has been found to have a large impact on the HRXRD curves. The As content in the interface layers has been determined by simulation of HRXRD rocking curves. We also show how highly strained interfaces cause more satellite peaks to appear in HRXRD rocking curves. PL spectra show that interrupting growth at the interfaces between wells and barriers and exposing the interfaces to an Sb soak result in flatter interfaces

Wave-packet dynamics in quantum wells

DEFF Research Database (Denmark)

Kuznetsov, A. V.; Sanders, G. D.; Stanton, C. J.

1995-01-01

It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems, this polari......It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems...... that the carriers in a quantum well can behave as an ensemble of classical particles and produce a transport like photocurrent....

Silicon Germanium Quantum Well Thermoelectrics

Science.gov (United States)

Davidson, Anthony Lee, III

Today's growing energy demands require new technologies to provide high efficiency clean energy. Thermoelectrics that convert heat to electrical energy directly can provide a method for the automobile industry to recover waste heat to power vehicle electronics, hence improving fuel economy. If large enough efficiencies can be obtained then the internal combustion engine could even be replaced. Exhaust temperature for automotive application range from 400 to 800 K. In this temperature range the current state of the art materials are bulk Si1-xGex alloys. By alternating layers of Si and Si1-xGex alloy device performance may be enhanced through quantum well effects and variations in material thermal properties. In this study, superlattices designed for in-plane operation with varying period and crystallinity are examined to determine the effect on electrical and thermal properties. In-plane electrical resistivity of these materials was found to be below the bulk material at a similar doping at room temperature, confirming the role of quantum wells in electron transport. As period is reduced in the structures boundary scattering limits electron propagation leading to increased resistivity. The Seebeck coefficient measured at room temperature is higher than the bulk material, additionally lending proof to the effects of quantum wells. When examining cross-plane operation the low doping in the Si layers of the device produce high resistivity resulting from boundary scattering. Thermal conductivity was measured from 77 K up to 674 K and shows little variation due to periodicity and temperature, however an order of magnitude reduction over bulk Si1-xGex is shown in all samples. A model is developed that suggests a combination of phonon dispersion effects and strong boundary scattering. Further study of the phonon dispersion effects was achieved through the examination of the heat capacity by combining thermal diffusivity with thermal conductivity. All superlattices show a

Quantum cluster algebra structures on quantum nilpotent algebras

CERN Document Server

Goodearl, K R

2017-01-01

All algebras in a very large, axiomatically defined class of quantum nilpotent algebras are proved to possess quantum cluster algebra structures under mild conditions. Furthermore, it is shown that these quantum cluster algebras always equal the corresponding upper quantum cluster algebras. Previous approaches to these problems for the construction of (quantum) cluster algebra structures on (quantized) coordinate rings arising in Lie theory were done on a case by case basis relying on the combinatorics of each concrete family. The results of the paper have a broad range of applications to these problems, including the construction of quantum cluster algebra structures on quantum unipotent groups and quantum double Bruhat cells (the Berenstein-Zelevinsky conjecture), and treat these problems from a unified perspective. All such applications also establish equality between the constructed quantum cluster algebras and their upper counterparts.

Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure

International Nuclear Information System (INIS)

Sahu, Trinath; Shore, K Alan

2009-01-01

We analyse the effect of interface roughness scattering on low temperature electron mobility μ n mediated by intersubband interactions in a multisubband coupled Ga 0.5 In 0.5 P/GaAs quantum well structure. We consider a barrier δ-doped double quantum well system in which the subband electron mobility is limited by the interface roughness scattering μ IR n and ionized impurity scattering μ imp n . We analyse the effect of the intersubband interaction and coupling of subband wavefunctions through the barrier on the intrasubband and intersubband transport scattering rates. We show that the intersubband interaction controls the roughness potential of different interfaces through the dielectric screening matrix. In the case of lowest subband occupancy, the mobility is mainly governed by the interface roughness of the central barrier. Whereas when two subbands are occupied, the interface roughness of the outer barrier predominates due to intersubband effects. The influence of the intersubband interaction also exhibits interesting results on the well width up to which the interface roughness dominates in a double quantum well structure

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Directory of Open Access Journals (Sweden)

Syed Ahmed Al Muyeed

2017-10-01

Full Text Available Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW using AlGaN interlayers (ILs. The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm, and the AlyGa1-yN IL has an Al composition of y = 0.42. The IL is varied from 0 - 2.1 nm, and the relaxation of the MQW with respect to the GaN template layer varies with IL thickness as determined by reciprocal space mapping about the (202¯5 reflection. The minimum in the relaxation occurs at an interlayer thickness of 1 nm, and the MQW is nearly pseudomorphic to GaN. Both thinner and thicker ILs display increased relaxation. Photoluminescence data shows enhanced spectral intensity and narrower full width at half maximum for the MQW with 1 nm thick ILs, which is a product of pseudomorphic layers with lower defect density and non-radiative recombination.

Multiplicative formulation of quantum mechanics

International Nuclear Information System (INIS)

Voros, A.; Leboeuf, P.

1991-01-01

A general semi-classical description for the eigenfunctions of the multidimensional Schroedinger operator cannot be based on the WKB method which is incompatible with classically ergodic behavior. An alternative, more general multiplicative parametrization of quantum wave functions is suggested, whereby the semi-classical behavior of eigenfunctions can be traced in the presence of classical ergodicity, in the form of diffusive patterns of phase-space zeros in the quantum wave functions. (author) 24 refs.; 4 figs

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

Energy Technology Data Exchange (ETDEWEB)

Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-04-15

The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.

THz emission of donor and acceptor doped GaAs/AlGaAs quantum well structures with inserted thin AlAs monolayer

Science.gov (United States)

van Dommelen, Paphavee; Daengngam, Chalongrat; Kalasuwan, Pruet

2018-04-01

In this paper, we explore THz range optical intersubband transition energies in a donor doped quantum well of a GaAs/AlGaAs system as a function of the insertion position of an AlAs monolayer in the GaAs quantum well. In simulated models, the optical transition energies between electron subband levels 1 and 2 were higher in the doped structure than in the undoped structure. This may be because the envelope wave function of the second electron subband strongly overlapped the envelope wave function of the first electron subband and influenced the optical intersubband transition between the two levels in the THz range. At different levels of bias voltage at the Schottky barrier on the donor doped structure, the electric field in the growth direction of the structure linearly increased the further away the AlAs monolayer was placed from the reference position. We also simulated the optical transition energies between acceptor energy levels of the acceptor doped structure as a function of the insertion position of the AlAs monolayer. The acceptor doped structure induced THz range emission whereas the undoped structure induced mid-IR emission.

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru; Fadeev, M. A.; Morozov, S. V.; Dubinov, A. A.; Kudryavtsev, K. E.; Kadykov, A. M. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Tuzov, I. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Dvoretskii, S. A.; Mikhailov, N. N. [Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation); Gavrilenko, V. I. [Novosibirsk State University (Russian Federation); Teppe, F. [Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)

2016-12-15

The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm{sup 2}) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.

Spatially indirect excitons in coupled quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lai, Chih-Wei Eddy [Univ. of California, Berkeley, CA (United States)

2004-03-01

Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunities for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer)² were

Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

International Nuclear Information System (INIS)

Zhao, M.; Karim, A.; Ni, W.-X.; Pidgeon, C.R.; Phillips, P.J.; Carder, D.; Murdin, B.N.; Fromherz, T.; Paul, D.J.

2006-01-01

Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of ∼2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process

Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

International Nuclear Information System (INIS)

Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I.

2014-01-01

The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented

Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

Energy Technology Data Exchange (ETDEWEB)

Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

2014-05-15

The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

Science.gov (United States)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory Group, Tyndall National Institute, Dyke Parade, Cork (Ireland); Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-05-14

In this paper, we compare and contrast the experimental data and the theoretical predictions of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well structures. In both types of structure, the optical properties at low temperatures are governed by the effects of carrier localisation. In polar structures, the effect of the in-built electric field leads to electrons being mainly localised at well width fluctuations, whereas holes are localised at regions within the quantum wells, where the random In distribution leads to local minima in potential energy. This leads to a system of independently localised electrons and holes. In nonpolar quantum wells, the nature of the hole localisation is essentially the same as the polar case but the electrons are now coulombically bound to the holes forming localised excitons. These localisation mechanisms are compatible with the large photoluminescence linewidths of the polar and nonpolar quantum wells as well as the different time scales and form of the radiative recombination decay curves.

Designing quantum information processing via structural physical approximation.

Science.gov (United States)

Bae, Joonwoo

2017-10-01

In quantum information processing it may be possible to have efficient computation and secure communication beyond the limitations of classical systems. In a fundamental point of view, however, evolution of quantum systems by the laws of quantum mechanics is more restrictive than classical systems, identified to a specific form of dynamics, that is, unitary transformations and, consequently, positive and completely positive maps to subsystems. This also characterizes classes of disallowed transformations on quantum systems, among which positive but not completely maps are of particular interest as they characterize entangled states, a general resource in quantum information processing. Structural physical approximation offers a systematic way of approximating those non-physical maps, positive but not completely positive maps, with quantum channels. Since it has been proposed as a method of detecting entangled states, it has stimulated fundamental problems on classifications of positive maps and the structure of Hermitian operators and quantum states, as well as on quantum measurement such as quantum design in quantum information theory. It has developed efficient and feasible methods of directly detecting entangled states in practice, for which proof-of-principle experimental demonstrations have also been performed with photonic qubit states. Here, we present a comprehensive review on quantum information processing with structural physical approximations and the related progress. The review mainly focuses on properties of structural physical approximations and their applications toward practical information applications.

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Guangyang Lin

2016-09-01

Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

International Nuclear Information System (INIS)

Davies, M. J.; Dawson, P.; Hammersley, S.; Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.

2016-01-01

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10 11  cm −2  pulse −1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

High intensity mid infra-red spectroscopy of intersubband transitions in semiconductor quantum wells

International Nuclear Information System (INIS)

Serapiglia, G.B.

2000-01-01

High intensity (10 8 Wcm -2 ) mid-infrared spectroscopy has been used to study the optical response of intersubband transitions in InGaAs/InAlAs quantum wells with three conduction subbands. Steady state optical pumping of 2 x 10 11 cm -2 electrons into the excited vertical bar2> subband and subsequent electron relaxation (via phonon emission) back to the ground vertical bar1> subband creates a non-equilibrium phonon population (phonon occupancy∼1 at T=30K). Phonon re-absorption leads to a non-thermal electron distribution where electron-phonon scattering rates ∼200-500fs -1 are much faster than electron-electron scattering. In this regime, the intersubband absorption is inhomogeneously broadened. For substantially weaker optical pumping (∼1 saturation intensity) however, the electron distribution is able to thermalise and the absorption is homogeneously broadened. The phenomenon of electromagnetically-induced quantum coherence is demonstrated between 3 confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon-resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all 3 states being simultaneously driven into ''phase-locked'' quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory. Efficient (∼1%) second harmonic generation, resonantly enhanced near λ=8.6μm, has been observed in asymmetric double multi-quantum well (ADQW) structures. Both waveguide mode and 45 deg. wedge multi-bounce geometries were used. The phase matching in the waveguide mode was achieved by incorporating a separate multiple QW region which modifies (via Kramers-Kronig relation) the dispersion of light. In the case of the 45 deg. wedge geometry, the phases of second harmonic waves generated at sequential

Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

KAUST Repository

Ivanov, Ts

2012-03-29

A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.

Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

KAUST Repository

Ivanov, Ts; Borissov, K.; David, J P R; Donchev, V.; Germanova, K.; Hongpinyo, V.; Ooi, Boon S.; Tellaleva, Ts; Vines, P.

2012-01-01

A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.

Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells

Energy Technology Data Exchange (ETDEWEB)

Duc, Huynh Thanh; Foerstner, Jens; Meier, Torsten [Department of Physics and CeOPP, University Paderborn (Germany); Priyadarshi, Shekar; Racu, Ana Maria; Pierz, Klaus; Siegner, Uwe; Bieler, Mark [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)

2010-07-01

We compute photocurrents generated by femtosecond single-color laser pulses in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p band structure theory with multi-band semiconductor Bloch equations. The transient photocurrents are investigated experimentally by measuring the associated Terahertz emission. The dependencies of the photocurrent and the Terahertz emission on the excitation conditions are discussed for (110)-oriented GaAs quantum wells. The comparison between theory and experiment shows a good agreement.

Fundamental Structure of Loop Quantum Gravity

Science.gov (United States)

Han, Muxin; Ma, Yongge; Huang, Weiming

In the recent twenty years, loop quantum gravity, a background independent approach to unify general relativity and quantum mechanics, has been widely investigated. The aim of loop quantum gravity is to construct a mathematically rigorous, background independent, non-perturbative quantum theory for a Lorentzian gravitational field on a four-dimensional manifold. In the approach, the principles of quantum mechanics are combined with those of general relativity naturally. Such a combination provides us a picture of, so-called, quantum Riemannian geometry, which is discrete on the fundamental scale. Imposing the quantum constraints in analogy from the classical ones, the quantum dynamics of gravity is being studied as one of the most important issues in loop quantum gravity. On the other hand, the semi-classical analysis is being carried out to test the classical limit of the quantum theory. In this review, the fundamental structure of loop quantum gravity is presented pedagogically. Our main aim is to help non-experts to understand the motivations, basic structures, as well as general results. It may also be beneficial to practitioners to gain insights from different perspectives on the theory. We will focus on the theoretical framework itself, rather than its applications, and do our best to write it in modern and precise langauge while keeping the presentation accessible for beginners. After reviewing the classical connection dynamical formalism of general relativity, as a foundation, the construction of the kinematical Ashtekar-Isham-Lewandowski representation is introduced in the content of quantum kinematics. The algebraic structure of quantum kinematics is also discussed. In the content of quantum dynamics, we mainly introduce the construction of a Hamiltonian constraint operator and the master constraint project. At last, some applications and recent advances are outlined. It should be noted that this strategy of quantizing gravity can also be extended to

Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers

International Nuclear Information System (INIS)

Koch, T.L.; Koren, U.; Eisentein, G.; Young, M.G.; Oron, M.; Giles, C.R.; Miller, B.I.

1990-01-01

The authors propose and demonstrate the application of ultra-thin etch-stop fabrication techniques to adiabatically expand the vertical optical mode size in 1.5 μm InGaAs/InGaAsP MQW lasers using a tapered-core passive intracavity waveguide structure. They achieve 30% differential quantum efficiency out the tapered facet, far-field FWHM of ∼ 12 degrees, and a butt-coupling efficiency into a cleaved fiber of - 4.2 dB, with - 1 dB alignment tolerances of ∼ ± 3 μM

Band alignment in ZnSe/Zn1-x-yCdxMnySe quantum-well structures

International Nuclear Information System (INIS)

Yu, W.Y.; Salib, M.S.; Petrou, A.; Jonker, B.T.; Warnock, J.

1997-01-01

We present a magneto-optical study of ZnSe/Zn 1-x-y Cd x Mn y Se quantum-well structures in which a suitable choice of the Cd composition leads to a system that is type I at zero magnetic field. When a magnetic field is applied perpendicular to the layers of the structure, the band edges split in such a way as to make the upper σ - (1/2, t 3/2) exciton transition type II, while the ground state σ + (-1/2, -3/2) exciton component remains type I at all field values. This alignment reduces the probability for carrier relaxation from the higher-energy exciton component and opens the possibility of hole-spin population inversion via optical pumping. copyright 1997 The American Physical Society

Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

International Nuclear Information System (INIS)

McKerracher, Ian; Fu Lan; Hoe Tan, Hark; Jagadish, Chennupati

2012-01-01

Various approaches can be used to selectively control the amount of intermixing in III-V quantum well and quantum dot structures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dot structures. These thin films were deposited by sputter deposition in order to minimize the incorporation of hydrogen, which has been reported to influence impurity-free vacancy disordering. The degree of intermixing was probed by photoluminescence spectroscopy and this is discussed with respect to the properties of the SiO x N y films. This work was also designed to monitor any additional intermixing that might be attributed to the sputtering process. In addition, the high-temperature stress is known to affect the group-III vacancy concentration, which is central to the intermixing process. This stress was directly measured and the experimental values are compared with an elastic-deformation model.

Modeling techniques for quantum cascade lasers

Energy Technology Data Exchange (ETDEWEB)

Jirauschek, Christian [Institute for Nanoelectronics, Technische Universität München, D-80333 Munich (Germany); Kubis, Tillmann [Network for Computational Nanotechnology, Purdue University, 207 S Martin Jischke Drive, West Lafayette, Indiana 47907 (United States)

2014-03-15

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

Modeling techniques for quantum cascade lasers

Science.gov (United States)

Jirauschek, Christian; Kubis, Tillmann

2014-03-01

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells

Science.gov (United States)

Marchewka, M.; Sheregii, E. M.; Tralle, I.; Ploch, D.; Tomaka, G.; Furdak, M.; Kolek, A.; Stadler, A.; Mleczko, K.; Zak, D.; Strupinski, W.; Jasik, A.; Jakiela, R.

2008-02-01

The experimental results obtained for magnetotransport in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells are reported. A beating effect occurring in the Shubnikov-de Haas (SdH) oscillations was observed for both types of structures at low temperatures in the parallel transport when the magnetic field was perpendicular to the layers. An approach for the calculation of the Landau level energies for DQW structures was developed and then applied to the analysis and interpretation of the experimental data related to the beating effect. We also argue that in order to account for the observed magnetotransport phenomena (SdH and integer quantum Hall effect), one should introduce two different quasi-Fermi levels characterizing two electron subsystems regarding the symmetry properties of their states, symmetric and anti-symmetric ones, which are not mixed by electron-electron interaction.

Fundamental principles of nanostructures and multiple exciton generation effect in quantum dots

International Nuclear Information System (INIS)

Turaeva, N.; Oksengendler, B.; Rashidova, S.

2011-01-01

In this work the theoretical aspects of the effect of multiple exciton generation in QDs has been studied. The statistic theory of multiple exciton generation in quantum dots is presented based on the Fermi approach to the problem of multiple generation of elementary particles at nucleon-nucleon collisions. Our calculations show that the quantum efficiencies of multiple exciton generation in various quantum dots at absorption of single photon are in a good agreement with the experimental data. The microscopic mechanism of this effect is based on the theory of electronic 'shaking'. In the work the deviation of averaged multiplicity of MEG effect from the Poisson law of fluctuations has been investigated. Besides, the role of interface electronic states of quantum dot and ligand has been considered by means of quantum mechanics. The size optimization of quantum dot has been arranged to receive the maximum multiplicity of MEG effect. (authors)

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Energy Technology Data Exchange (ETDEWEB)

Redaelli, L.; Mukhtarova, A.; Valdueza-Felip, S.; Ajay, A.; Durand, C.; Eymery, J.; Monroy, E. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», CEA-Grenoble, INAC/SP2M, 17 avenue des Martyrs, 38054 Grenoble cedex 9 (France); Bougerol, C.; Himwas, C. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», Institut Néel-CNRS, 25 avenue des Martyrs, 38042 Grenoble cedex 9 (France); Faure-Vincent, J. [Université Grenoble Alpes, 38000 Grenoble (France); CNRS, INAC-SPRAM, F-38000 Grenoble (France); CEA, INAC-SPRAM, F-38000 Grenoble (France)

2014-09-29

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In{sub 0.12}Ga{sub 0.88}N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J.; Dawson, P.; Hammersley, S. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, M13 9PL Manchester (United Kingdom); Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-06-20

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

Magneto-gyrotropic photogalvanic effects in semiconductor quantum wells

International Nuclear Information System (INIS)

Bel'kov, V V; Ganichev, S D; Ivchenko, E L; Tarasenko, S A; Weber, W; Giglberger, S; Olteanu, M; Tranitz, H-P; Danilov, S N; Schneider, Petra; Wegscheider, W; Weiss, D; Prettl, W

2005-01-01

We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Energy Technology Data Exchange (ETDEWEB)

Lekhal, K.; Damilano, B., E-mail: bd@crhea.cnrs.fr; De Mierry, P.; Vennéguès, P. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France); Ngo, H. T.; Rosales, D.; Gil, B. [Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier (France); Hussain, S. [CRHEA-CNRS, Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France); Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2 (France)

2015-04-06

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates

Energy Technology Data Exchange (ETDEWEB)

Sodabanlu, Hassanet, E-mail: sodabanlu@hotaka.t.u-tokyo.ac.jp; Wang, Yunpeng; Watanabe, Kentaroh [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan); Sugiyama, Masakazu [Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Institute of Engineering Innovation, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Nakano, Yoshiaki [Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8904 (Japan); Department of Electrical Engineering and Information System, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

2014-06-21

The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities.

Low voltage operation of electro-absorption modulator promising for high-definition 3D imaging application using a three step asymmetric coupled quantum well structure

International Nuclear Information System (INIS)

Na, Byung Hoon; Ju, Gun Wu; Cho, Yong Chul; Lee, Yong Tak; Choi, Hee Ju; Jeon, Jin Myeong; Lee, Soo Kyung; Park, Yong Hwa; Park, Chang Young

2015-01-01

In this paper, we propose a transmission type electro-absorption modulator (EAM) operating at 850 nm having low operating voltage and high absorption change with low insertion loss using a novel three step asymmetric coupled quantum well (3 ACQW) structure which can be used as an optical image shutter for high-definition (HD) three dimensional (3D) imaging. Theoretical calculations show that the exciton red shift of 3 ACQW structure is more than two times larger than that of rectangular quantum well (RQW) structure while maintaining high absorption change. The EAM having coupled cavities with 3 ACQW structure shows a wide spectral bandwidth and high amplitude modulation at a bias voltage of only -8V, which is 41% lower in operating voltage than that of RQW, making the proposed EAM highly attractive as an optical image shutter for HD 3D imaging applications

Exciton dynamics in GaAs/AlxGa1-xAs quantum wells

DEFF Research Database (Denmark)

Litvinenko, K.; Birkedal, Dan; Lyssenko, V. G.

1999-01-01

The changes induced in the optical absorption spectrum of a GaAs/AlxGa1-xAs multiple quantum well due to a photoexcited carrier distribution are reexamined. We use a femtosecond pump-probe technique to excite excitons and free electron-hole pairs. We find that for densities up to 10(11) cm(-2...

Multiple exciton generation in quantum dot-based solar cells

Science.gov (United States)

Goodwin, Heather; Jellicoe, Tom C.; Davis, Nathaniel J. L. K.; Böhm, Marcus L.

2018-01-01

Multiple exciton generation (MEG) in quantum-confined semiconductors is the process by which multiple bound charge-carrier pairs are generated after absorption of a single high-energy photon. Such charge-carrier multiplication effects have been highlighted as particularly beneficial for solar cells where they have the potential to increase the photocurrent significantly. Indeed, recent research efforts have proved that more than one charge-carrier pair per incident solar photon can be extracted in photovoltaic devices incorporating quantum-confined semiconductors. While these proof-of-concept applications underline the potential of MEG in solar cells, the impact of the carrier multiplication effect on the device performance remains rather low. This review covers recent advancements in the understanding and application of MEG as a photocurrent-enhancing mechanism in quantum dot-based photovoltaics.

Lattice-matched double dip-shaped BAlGaN/AlN quantum well structures for ultraviolet light emission devices

Science.gov (United States)

Park, Seoung-Hwan; Ahn, Doyeol

2018-05-01

Ultraviolet light emission characteristics of lattice-matched BxAlyGa1-x-y N/AlN quantum well (QW) structures with double AlGaN delta layers were investigated theoretically. In contrast to conventional single dip-shaped QW structure where the reduction effect of the spatial separation between electron and hole wave functions is negligible, proposed double dip-shaped QW shows significant enhancement of the ultraviolet light emission intensity from a BAlGaN/AlN QW structure due to the reduced spatial separation between electron and hole wave functions. The emission peak of the double dip-shaped QW structure is expected to be about three times larger than that of the conventional rectangular AlGaN/AlN QW structure.

Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

KAUST Repository

Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Shen, Chao; Salhi, Abdelmajid; Alyamani, Ahmed; El-Desouki, Munir; Ooi, Boon S.

2015-01-01

We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.

Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

KAUST Repository

Mishra, Pawan

2015-05-06

We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.

Suppressing Nonradiative Recombination in Crown-Shaped Quantum Wells

Energy Technology Data Exchange (ETDEWEB)

Park, Kwangwook [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ju, Gunwu [Gwangju Institute of Science and Technology; Korea Institute of Science and Technology; Na, Byung Hoon [Samsung Advanced Institute of Technology; Hwang, Hyeong-Yong [Gwangju Institute of Science and Technology; Jho, Young-Dahl [Gwangju Institute of Science and Technology; Myoung, NoSoung [Gwangju Institute of Science and Technology; Yim, Sang-Youp [Gwangju Institute of Science and Technology; Kim, Hyung-jun [Korea Institute of Science and Technology; Lee, Yong Tak [Gwangju Institute of Science and Technology

2018-02-06

We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps.

Quantum optics in multiple scattering random media

DEFF Research Database (Denmark)

Lodahl, Peter; Lagendijk, Ad

2005-01-01

Quantum Optics in Multiple Scattering Random Media Peter Lodahl Research Center COM, Technical University of Denmark, Dk-2800 Lyngby, Denmark. Coherent transport of light in a disordered random medium has attracted enormous attention both from a fundamental and application point of view. Coherent......-tions that should be readily attainable experimentally is devised. Figure 1. Inverse total transmission of shot noise (left) and technical noise (right) as a function of the thickness of the ran-dom medium. The experimental data are well explained by theory (curves). [1] J. Tworzydlo and C.W.J. Beenakker, Phys. Rev...

On Multiplicative Linear Logic, Modality and Quantum Circuits

Directory of Open Access Journals (Sweden)

Ugo Dal Lago

2012-10-01

Full Text Available A logical system derived from linear logic and called QMLL is introduced and shown able to capture all unitary quantum circuits. Conversely, any proof is shown to compute, through a concrete GoI interpretation, some quantum circuits. The system QMLL, which enjoys cut-elimination, is obtained by endowing multiplicative linear logic with a quantum modality.

Electrically Induced Two-Photon Transparency in Semiconductor Quantum Wells

International Nuclear Information System (INIS)

Hayat, Alex; Nevet, Amir; Orenstein, Meir

2009-01-01

We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency - a necessary condition for semiconductor two-photon gain and lasing. These results agree with our calculations.

Dynamic analysis of optical soliton pair and four-wave mixing via Fano interference in multiple quantum wells

International Nuclear Information System (INIS)

Yan, Wei; Qu, Junle; Niu, H B

2014-01-01

We perform a time-dependent analysis of the formation and stable propagation of an ultraslow optical soliton pair, and four-wave mixing (FWM) via tunable Fano interference in double-cascade type semiconductor multiple quantum wells (SMQWs). By using the probability amplitude method to describe the interaction of the system, we demonstrate that the electromagnetically induced transparency (EIT) can be controlled by Fano interference in the linear case and the strength of Fano interference has an important effect on the group velocity and amplitude of the soliton pair in the nonlinear case. Then, when the signal field is removed, the dynamic FWM process is analyzed in detail, and we find that the strength of Fano interference also has an important effect on the FWM’s efficiency: the maximum FWM efficiency is ∼28% in appropriate conditions. The investigations are promising for practical applications in optical devices and optical information processing for solid systems. (paper)

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

International Nuclear Information System (INIS)

Aleksiejūnas, R.; Gelžinytė, K.; Nargelas, S.; Jarašiūnas, K.; Vengris, M.; Armour, E. A.; Byrnes, D. P.; Arif, R. A.; Lee, S. M.; Papasouliotis, G. D.

2014-01-01

We report on diffusion-driven and excitation-dependent carrier recombination rate in multiple InGaN/GaN quantum wells by using photoluminescence, light-induced absorption, and diffraction techniques. We demonstrate gradually increasing with excitation carrier diffusivity and its correlation with the recombination rate. At low carrier densities, an increase in radiative emission and carrier lifetime was observed due to partial saturation of non-radiative recombination centers. However, at carrier densities above ∼5 × 10 18  cm −3 , a typical value of photoluminescence efficiency droop, a further increase of diffusivity forces the delocalized carriers to face higher number of fast non-radiative recombination centers leading to an increase of non-radiative losses

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Aleksiejūnas, R.; Gelžinytė, K.; Nargelas, S., E-mail: saulius.nargelas@ff.vu.lt; Jarašiūnas, K. [Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Saulėtekio 9–III, 10222 Vilnius (Lithuania); Vengris, M. [Laser Research Center, Vilnius University, Saulėtekio 10, 10223 Vilnius (Lithuania); Armour, E. A.; Byrnes, D. P.; Arif, R. A.; Lee, S. M.; Papasouliotis, G. D. [Veeco Instruments, Turbodisc Operations, 394 Elizabeth Avenue, Somerset, New Jersey 08873 (United States)

2014-01-13

We report on diffusion-driven and excitation-dependent carrier recombination rate in multiple InGaN/GaN quantum wells by using photoluminescence, light-induced absorption, and diffraction techniques. We demonstrate gradually increasing with excitation carrier diffusivity and its correlation with the recombination rate. At low carrier densities, an increase in radiative emission and carrier lifetime was observed due to partial saturation of non-radiative recombination centers. However, at carrier densities above ∼5 × 10{sup 18} cm{sup −3}, a typical value of photoluminescence efficiency droop, a further increase of diffusivity forces the delocalized carriers to face higher number of fast non-radiative recombination centers leading to an increase of non-radiative losses.

Transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure

International Nuclear Information System (INIS)

Wang Zhigang; Zheng Zhiren; Yu Junhua

2007-01-01

The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening

Room-temperature near-field reflection spectroscopy of single quantum wells

DEFF Research Database (Denmark)

Langbein, Wolfgang Werner; Hvam, Jørn Marcher; Madsen, Steen

1997-01-01

. This technique suppresses efficiently the otherwise dominating far-field background and reduces topographic artifacts. We demonstrate its performance on a thin, strained near-surface CdS/ZnS single quantum well at room temperature. The optical structure of these topographically flat samples is due to Cd...

High-amplitude THz and GHz strain waves, generated by ultrafast screening of piezoelectric fields in InGaN/GaN multiple quantum wells

DEFF Research Database (Denmark)

Porte, Henrik; van Capel, P.J.S.; Turchinovich, Dmitry

2010-01-01

Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening.......Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening....

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schade, L.; Schwarz, U.T. [Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79108 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany); Wernicke, T. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany)

2011-03-15

Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline anisotropy as a basic property of the wurtzite structure. The influence of this anisotropy on the band structure and the transition matrix elements was calculated by a k.p-method for arbitrary quantum well orientations with respect to the c-axis; results are shown here in detail. Optical polarization is a direct consequence of a broken symmetry, mainly affecting the transition matrix elements from the conduction to the valence bands. Furthermore, the strain of the InGaN quantum well strongly depends on the crystal orientation of the substrate, resulting in a valence band mixing. The composition of the eigenfunctions has emerged to be most important for the polarization dependence of strained semipolar and nonpolar InGaN QW. The matrix elements, in combination with the thermal occupation of the bands, determine the polarization of the spontaneously emitted light. Our photoluminescence measurements of nonpolar QW match well with this model. However, in contrast to calculations with standard band parameters, the two topmost subbands show a larger separation in the emitted energy. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Energy Technology Data Exchange (ETDEWEB)

Kundys, D., E-mail: dmytro.kundys@manchester.ac.uk; Sutherland, D.; Badcock, T. J.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory group, Tyndall National Institute, Lee Maltings, Cork (Ireland); Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS (United Kingdom)

2014-03-21

We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

Observation of spatial quantum correlations induced by multiple scattering of nonclassical light

DEFF Research Database (Denmark)

Smolka, Stephan; Huck, Alexander; Andersen, Ulrik Lund

2009-01-01

and negative spatial quantum correlations are observed when varying the quantum state incident to the multiple scattering medium, and the strength of the correlations is controlled by the number of photons. The experimental results are in excellent agreement with recent theoretical proposals by implementing......We present the experimental realization of spatial quantum correlations of photons that are induced by multiple scattering of squeezed light. The quantum correlation relates photons propagating along two different light paths through the random medium and is infinite in range. Both positive...... the full quantum model of multiple scattering....

Super-resolution with a positive epsilon multi-quantum-well super-lens

International Nuclear Information System (INIS)

Bak, A. O.; Giannini, V.; Maier, S. A.; Phillips, C. C.

2013-01-01

We design an anisotropic and dichroic quantum metamaterial that is able to achieve super-resolution without the need for a negative permittivity. When exploring the parameters of the structure, we take into account the limits of semiconductor fabrication technology based on quantum well stacks. By heavily doping the structure with free electrons, we infer an anisotropic effective medium with a prolate ellipsoid dispersion curve which allows for near-diffractionless propagation of light (similar to an epsilon-near-zero hyperbolic lens). This, coupled with low absorption, allows us to resolve images at the sub-wavelength scale at distances 6 times greater than equivalent natural materials

Trade-off between bandwidth and efficiency in semipolar (20 2 ¯ 1 ¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

Science.gov (United States)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Nami, M.; Oh, S. H.; DenBaars, S. P.; Feezell, D.

2018-05-01

InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum efficiency (IQE) under operating conditions is also important. Here, we report the modulation characteristics of semipolar (20 2 ¯ 1 ¯ ) InGaN/GaN (LEDs) with single-quantum well (SQW) and multiple-quantum-well (MQW) active regions grown on free-standing semipolar GaN substrates with peak internal quantum efficiencies (IQEs) of 0.93 and 0.73, respectively. The MQW LEDs exhibit on average about 40-80% higher modulation bandwidth, reaching 1.5 GHz at 13 kA/cm2, but about 27% lower peak IQE than the SQW LEDs. We extract the differential carrier lifetimes (DLTs), RC parasitics, and carrier escape lifetimes and discuss their role in the bandwidth and IQE characteristics. A coulomb-enhanced capture process is shown to rapidly reduce the DLT of the MQW LED at high current densities. Auger recombination is also shown to play little role in increasing the speed of the LEDs. Finally, we investigate the trade-offs between the bandwidth and efficiency and introduce the bandwidth-IQE product as a potential figure of merit for optimizing speed and efficiency in InGaN/GaN LEDs.

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

Science.gov (United States)

Xing, Yao; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Liang, Feng; Liu, Shuangtao; Zhang, Liqun; Wang, Wenjie; Li, Mo; Zhang, Yuantao; Du, Guotong

2018-05-01

In InGaN/GaN multi-quantum wells (MQWs), a low temperature cap (LT-cap) layer is grown between the InGaN well layer and low temperature GaN barrier layer. During the growth, a temperature ramp-up and ramp-down process is added between LT-cap and barrier layer growth. The effect of temperature ramp-up time duration on structural and optical properties of quantum wells is studied. It is found that as the ramp-up time increases, the Indium floating layer on the top of the well layer can be diminished effectively, leading to a better interface quality between well and barrier layers, and the carrier localization effect is enhanced, thereby the internal quantum efficiency (IQE) of QWs increases surprisingly. However, if the ramp-up time is too long, the carrier localization effect is weaker, which may increase the probabilities of carriers to meet with nonradiative recombination centers. Meanwhile, more nonradiative recombination centers will be introduced into well layers due to the indium evaporation. Both of them will lead to a reduction of internal quantum efficiency (IQE) of MQWs.

Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy

International Nuclear Information System (INIS)

Giles, N.C.; Yang, Z.; Han, J.W.; Cook, J.W. Jr.; Schetzina, J.F.

1990-01-01

We report the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates by photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a continuous wave Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm 2 and at temperatures ≥60 K

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

Energy Technology Data Exchange (ETDEWEB)

Yablonsky, A. N., E-mail: yablonsk@ipmras.ru; Zhukavin, R. Kh.; Bekin, N. A.; Novikov, A. V.; Yurasov, D. V.; Shaleev, M. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-12-15

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si{sub 0.8}5Ge{sub 0.15} layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to <5 ns, as the Si barrier thickness is reduced from 16 to 8 nm. At intermediate Si barrier thicknesses, an increase in the photoluminescence signal from the wide quantum well is observed, with a characteristic time of the same order of magnitude as the luminescence decay time of the narrow quantum well. This supports the observation of the effect of the tunneling of holes from the narrow to the wide quantum well. A strong dependence of the tunneling time of holes on the Ge content in the SiGe layers at the same thickness of the Si barrier between quantum wells is observed, which is attributed to an increase in the effective Si barrier height.

Excitonic spectrum of the ZnO/ZnMgO quantum wells

Energy Technology Data Exchange (ETDEWEB)

Bobrov, M. A., E-mail: largaseal@gmail.com; Toropov, A. A.; Ivanov, S. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); El-Shaer, A.; Bakin, A.; Waag, A. [TU Braunschweig, Institute of Semiconductor Technology (Germany)

2011-06-15

Excitonic spectrum of the wurtzite ZnO/Zn{sub 1-x}Mg{sub x}O quantum wells with a width on the order of or larger than the Bohr radius of the exciton has been studied; the quantum wells have been grown by the method of molecular beam epitaxy (with plasma-assisted activation of oxygen) on substrates of sapphire (0001). Low-temperature (25 K) spectra of photoluminescence excitation (PLE) have been experimentally measured, making it possible to resolve the peaks of exciton absorption in the quantum well. The spectrum of excitons in the quantum well is theoretically determined as a result of numerical solution of the Schroedinger equation by the variational method. The value of elastic stresses in the structure (used in calculations) has been determined from theoretical simulation of measured spectra of optical reflection. A comparison of experimental data with the results of calculations makes it possible to relate the observed features in the PLE spectra to excitons, including the lower level of dimensional quantization for electrons and two first levels of holes for the A and B valence bands of the wurtzite crystal. The values of the electron and hole masses in ZnO are refined, and the value of the built-in electric field introduced by spontaneous and piezoelectric polarizations is estimated.

Ubiquitous Quantum Structure From Psychology to Finance

CERN Document Server

Khrennikov, Andrei Y

2010-01-01

Quantum-like structure is present practically everywhere. Quantum-like (QL) models, i.e. models based on the mathematical formalism of quantum mechanics and its generalizations can be successfully applied to cognitive science, psychology, genetics, economics, finances, and game theory. This book is not about quantum mechanics as a physical theory. The short review of quantum postulates is therefore mainly of historical value: quantum mechanics is just the first example of the successful application of non-Kolmogorov probabilities, the first step towards a contextual probabilistic description of natural, biological, psychological, social, economical or financial phenomena. A general contextual probabilistic model (Växjö model) is presented. It can be used for describing probabilities in both quantum and classical (statistical) mechanics as well as in the above mentioned phenomena. This model can be represented in a quantum-like way, namely, in complex and more general Hilbert spaces. In this way quantum prob...

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Science.gov (United States)

Welser, Roger E. (Inventor); Sood, Ashok K. (Inventor)

2014-01-01

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Science.gov (United States)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-02-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Spin fine structure of optically excited quantum dot molecules

Science.gov (United States)

Scheibner, M.; Doty, M. F.; Ponomarev, I. V.; Bracker, A. S.; Stinaff, E. A.; Korenev, V. L.; Reinecke, T. L.; Gammon, D.

2007-06-01

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin-exchange interactions, Pauli exclusion, and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals but also spins.

Short-range order structures of self-assembled Ge quantum dots probed by multiple-scattering extended x-ray absorption fine structure

International Nuclear Information System (INIS)

Sun Zhihu; Wei Shiqiang; Kolobov, A.V.; Oyanagi, H.; Brunner, K.

2005-01-01

Multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) has been used to investigate the local structures around Ge atoms in self-assembled Ge-Si quantum dots (QDs) grown on Si(001) substrate. The MS effect of Ge QDs is dominated by the scattering path Ge 0 →B 1 →B 2 →Ge 0 (DS2), which contributes a signal destructively interfering with that of the second shell single-scattering path (SS2). MS-EXAFS analysis reveals that the degree of Ge-Si intermixing for Ge-Si QDs strongly depends on the temperature at which the silicon cap layer is overgrown. It is found that the interatomic distances (R Ge-Ge and R Ge-Si ) within the third nearest-neighbor shells in Ge-Si QDs indicate the compressively strained nature of QDs. The present study demonstrates that the MS-EXAFS provides detailed information on the QDs strain and the Ge-Si mixing beyond the nearest neighbors

Si quantum dot structures and their applications

Science.gov (United States)

Shcherbyna, L.; Torchynska, T.

2013-06-01

This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Science.gov (United States)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-09-01

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm-2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Electron Raman scattering in quantum well wires

International Nuclear Information System (INIS)

Zhao Xiangfu; Liu Cuihong

2007-01-01

Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T=0K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as a function of a scattering frequency and the cylindrical radius. Electron states are confined within a QWW. Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are interpreted for various cylindrical radii. ERS discussed here can provide direct information about the electron band structure of the system

Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

Energy Technology Data Exchange (ETDEWEB)

Stehr, D.

2007-12-28

This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

Scanning capacitance microscopy investigations of InGaAs/InP quantum wells

International Nuclear Information System (INIS)

Douheret, O.; Maknys, K.; Anand, S.

2004-01-01

In this work, cross-sectional scanning capacitance microscopy (SCM) is used to investigate InGaAs/InP (latticed matched) quantum wells grown by metal-organic vapor phase epitaxy. Using n-doped InP as barriers with different doping levels, different InGaAs wells structures (5, 10 and 20 nm) were investigated. The capability of SCM to detect electrons in the quantum wells is demonstrated, showing in addition, a systematic and consistent trend for the different well widths and barrier doping levels. The SCM results are qualitatively consistent with electron distribution obtained for 1D Poisson/Schroedinger simulation. Finally, resolution issues in SCM are discussed in terms of tip averaging effects

Modeling Quantum Well Lasers

Directory of Open Access Journals (Sweden)

Dan Alexandru Anghel

2012-01-01

Full Text Available In semiconductor laser modeling, a good mathematical model gives near-reality results. Three methods of modeling solutions from the rate equations are presented and analyzed. A method based on the rate equations modeled in Simulink to describe quantum well lasers was presented. For different signal types like step function, saw tooth and sinus used as input, a good response of the used equations is obtained. Circuit model resulting from one of the rate equations models is presented and simulated in SPICE. Results show a good modeling behavior. Numerical simulation in MathCad gives satisfactory results for the study of the transitory and dynamic operation at small level of the injection current. The obtained numerical results show the specific limits of each model, according to theoretical analysis. Based on these results, software can be built that integrates circuit simulation and other modeling methods for quantum well lasers to have a tool that model and analysis these devices from all points of view.

Control of dynamic properties of InAs/InAlGaAs/InP hybrid quantum well-quantum dot structures designed as active parts of 1.55 μm emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Rudno-Rudzinski, Wojciech; Syperek, Marcin; Marynski, Aleksander; Andrzejewski, Janusz; Misiewicz, Jan; Sek, Grzegorz [Faculty of Fundamental Problems of Technology, Department of Experimental Physics, Wroclaw University of Science and Technology, Wroclaw (Poland); Bauer, Sven; Sichkovskyi, Vitalii I.; Reithmaier, Johann P. [Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel (Germany); Schowalter, Marco; Gerken, Beeke; Rosenauer, Andreas [Institute of Solid State Physics, Universitaet Bremen (Germany)

2018-02-15

The molecular beam epitaxy grown structures are investigated, comprising of InGaAs quantum wells (QW) separated by a thin InGaAlAs barrier from InAs quantum dots (QDs), emitting at 1.55 μm, grown on an InP substrate. To control the coupling between QW and QD parts the thickness of the barrier is changed, which commands the wave function overlap. The tuning of that parameter allows for the study of the influence of the QW potential on the energy structure of states and their wave functions in QDs, changing from an uncoupled system, where the optical response is just a sum of responses from two isolated elements, to a strongly quantum mechanically coupled system, exhibiting mixed 2D-0D characteristics. The changes of the energy structure that are deduced from the photoreflectance and photoluminescence spectroscopy results, supported by 8-band k . p modeling, explain the measured differences in the photoluminescence decay times between samples with different barrier thicknesses. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanostructure van der Waals interaction between a quantum well and a quantum dot atom

International Nuclear Information System (INIS)

Horing, Norman J Morgenstern

2006-01-01

We examine the van der Waals interaction between mobile plasma electrons in a narrow quantum well nanostructure and a quantum dot atom. This formulation of the van der Waals interaction exhibits it to second order as the correlation energy (self-energy) of the dot-atom electrons mediated by the image potential arising from the dynamic, nonlocal and spatially inhomogeneous polarization of the quantum well plasma electrons. This image potential of the quantum-well plasma is, in turn, determined by the dynamic, nonlocal, inhomogeneous screening function of the quantum well, which involves the space-time matrix inversion of its spatially inhomogeneous, nonlocal and time-dependent dielectric function. The latter matrix inversion is carried out exactly, in closed form, and the van der Waals energy is evaluated in the electrostatic limit to dipole-dipole terms

Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

International Nuclear Information System (INIS)

Sahoo, N.; Sahu, T.

2014-01-01

We study the multisubband electron mobility in a barrier delta doped Al x Ga 1−x As parabolic quantum well structure under the influence of an applied electric field perpendicular to the interface plane. We consider the alloy fraction x = 0.3 for barriers and vary x from 0.0 to 0.1 for the parabolic well. Electrons diffuse into the well and confine within the triangular like potentials near the interfaces due to Coulomb interaction with ionized donors. The parabolic structure potential, being opposite in nature, partly compensates the Coulomb potential. The external electric field further amends the potential structure leading to an asymmetric potential profile. Accordingly the energy levels, wave functions and occupation of subbands change. We calculate low temperature electron mobility as a function of the electric field and show that when two subbands are occupied, the mobility is mostly dominated by ionised impurity scattering mediated by intersubband effects. As the field increases transition from double subband to single subband occupancy occurs. A sudden enhancement in mobility is obtained due to curtailment of intersubband effects. Thereafter the mobility is governed by both impurity and alloy disorder scatterings. Our analysis of mobility as a function of the electric field for different structural parameters shows interesting results. (semiconductor physics)

Terahertz spectroscopy of shift currents resulting from asymmetric (110)-oriented GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Priyadarshi, Shekhar; Leidinger, Markus; Pierz, Klaus; Racu, Ana M.; Siegner, Uwe; Bieler, Mark; Dawson, Philip

2009-01-01

We report the observation and the study of an additional shift current tensor element in (110)-oriented GaAs quantum wells, which arises from an out-of-plane asymmetry of the quantum well structure. The current resulting from this tensor element is optically induced with 150 fs laser pulses and detected by measuring the simultaneously emitted terahertz radiation. This terahertz spectroscopy of shift currents is a powerful technique for symmetry investigations, which shows, for example, that our nominally symmetric (110)-oriented GaAs/AlGaAs quantum wells grown by molecular beam epitaxy are in reality asymmetric structures with different right and left interfaces.

Strained quantum well photovoltaic energy converter

Science.gov (United States)

Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

1998-01-01

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Quantum Well Infrared Photodetectors Physics and Applications

CERN Document Server

Schneider, Harald

2007-01-01

Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

KAUST Repository

Li, Xiaohang; Xie, Hongen; Ponce, Fernando A.; Ryou, Jae-Hyun; Detchprohm, Theeradetch; Dupuis, Russell D.

2015-01-01

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-plane AlGaNmultiple-quantum well(MQW)heterostructuresgrown on a sapphire substrate by optical pumping at room temperature. The onset of SE became observable at a

Spectroscopy of GaAs quantum wells

International Nuclear Information System (INIS)

West, L.C.

1985-07-01

A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs

Spectroscopy of GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

West, L.C.

1985-07-01

A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

Quantum well saturable absorber mirror with electrical control of modulation depth

DEFF Research Database (Denmark)

Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil

2010-01-01

in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect......We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...

Temperature dependence of active photonic band gap in bragg-spaced quantum wells

Energy Technology Data Exchange (ETDEWEB)

Hu Zhiqiang; Wang Tao; Yu Chunchao; Xu Wei, E-mail: huzhiqianghzq@163.com [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China)

2011-02-01

A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

Temperature dependence of active photonic band gap in bragg-spaced quantum wells

International Nuclear Information System (INIS)

Hu Zhiqiang; Wang Tao; Yu Chunchao; Xu Wei

2011-01-01

A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

Optical and electrical characteristics of GaAs/InGaAs quantum-well device

International Nuclear Information System (INIS)

Hsu, K.C.; Ho, C.H.; Lin, Y.S.; Wu, Y.H.; Hsu, R.T.; Huang, K.W.

2009-01-01

A GaAs/InGaAs quantum-well structure was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum well was graded from 25% to 15% indium (from the bottom to the top of the channel). Hall measurements were made to characterize the concentration and mobility of the two-dimensional electron gas (2DEG). The temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectra of the structure of interest were obtained. Various intersuband features were observed in the PR spectra. Furthermore, a 1.5 μm gate-length high-electron mobility transistor (HEMT), fabricated on these layers, had an extrinsic transconductance of 127 mS/mm. The optical and electrical characteristics were determined simultaneously

Performance analysis of quantum access network using code division multiple access model

International Nuclear Information System (INIS)

Hu Linxi; Yang Can; He Guangqiang

2017-01-01

A quantum access network has been implemented by frequency division multiple access and time division multiple access, while code division multiple access is limited for its difficulty to realize the orthogonality of the code. Recently, the chaotic phase shifters were proposed to guarantee the orthogonality by different chaotic signals and spread the spectral content of the quantum states. In this letter, we propose to implement the code division multiple access quantum network by using chaotic phase shifters and synchronization. Due to the orthogonality of the different chaotic phase shifter, every pair of users can faithfully transmit quantum information through a common channel and have little crosstalk between different users. Meanwhile, the broadband spectra of chaotic signals efficiently help the quantum states to defend against channel loss and noise. (paper)

Quantum critical matter. Quantum phase transitions with multiple dynamics and Weyl superconductors

International Nuclear Information System (INIS)

Meng, Tobias

2012-01-01

In this PhD thesis, the physics of quantum critical matter and exotic quantum state close to quantum phase transitions is investigated. We will focus on three different examples that highlight some of the interesting phenomena related to quantum phase transitions. Firstly, we discuss the physics of quantum phase transitions in quantum wires as a function of an external gate voltage when new subbands are activated. We find that at these transitions, strong correlations lead to the formation of an impenetrable gas of polarons, and identify criteria for possible instabilities in the spin- and charge sectors of the model. Our analysis is based on the combination of exact resummations, renormalization group techniques and Luttinger liquid approaches. Secondly, we turn to the physics of multiple divergent time scales close to a quantum critical point. Using an appropriately generalized renormalization group approach, we identify that the presence of multiple dynamics at a quantum phase transition can lead to the emergence of new critical scaling exponents and thus to the breakdown of the usual scaling schemes. We calculate the critical behavior of various thermodynamic properties and detail how unusual physics can arise. It is hoped that these results might be helpful for the interpretation of experimental scaling puzzles close to quantum critical points. Thirdly, we turn to the physics of topological transitions, and more precisely the physics of Weyl superconductors. The latter are the superconducting variant of the topologically non-trivial Weyl semimetals, and emerge at the quantum phase transition between a topological superconductor and a normal insulator upon perturbing the transition with a time reversal symmetry breaking perturbation, such as magnetism. We characterize the topological properties of Weyl superconductors and establish a topological phase diagram for a particular realization in heterostructures. We discuss the physics of vortices in Weyl

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B. [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23238 (United States); Leach, J. H. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

2014-02-21

The optical properties of GaN/Al{sub 0.15}Ga{sub 0.85}N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

International Nuclear Information System (INIS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-01-01

The optical properties of GaN/Al 0.15 Ga 0.85 N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells

Investigation on surface-plasmon-enhanced light emission of InGaN/GaN multiple quantum wells

Science.gov (United States)

Yu, Zhenzhong; Li, Qiang; Fan, Qigao; Zhu, Yixin

2018-05-01

We demonstrate surface-plasmon (SP) enhanced light emission from InGaN/GaN near ultraviolet (NUV) multiple quantum wells (MQWs) using Ag thin films and nano-particles (NPs). Two types of Ag NP arrays are fabricated on the NUV-MQWs, one is fabricated on p-GaN layer with three different sizes of about 120, 160 and 240 nm formed by self-assembled process, while the other is embedded close to the MQWs. In addition, the influence of the surface plasmon polariton (SPP) and localized surface plasmon (LSP) in NUV-MQWs has been investigated by photoluminescence (PL) measurement. Both PL measurements and theoretical simulation results show that the NUV light would be extracted more effectively under LSP mode than that of SPP mode. The highest enhancement of PL intensity is increased by 324% for the sample with NPs embedded in etched p-GaN near the MQWs as compared with the bare MQWs, also is about 1.24 times higher than the MQW sample covered with Ag NPs on the surface, indicating strong surface scattering and SP coupling between Ag NPs and NUV-MQWs.

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

Energy Technology Data Exchange (ETDEWEB)

Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr [Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes (France); Jiménez, Juan; Torres, Alfredo [GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain); Levallois, Christophe; Léger, Yoan; Beck, Alexandre [UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes (France); Pommereau, Frédéric [III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau (France); Frigeri, Cesare [CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma (Italy); Rhallabi, Ahmed [Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes (France)

2016-07-15

The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

Science.gov (United States)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Field emission from finite barrier quantum structures

Energy Technology Data Exchange (ETDEWEB)

Biswas Sett, Shubhasree, E-mail: shubhasree24@gmail.com [The Institution of Engineers - India, 8, Gokhale Road, Kolkata 700 020 (India); Bose, Chayanika, E-mail: chayanikab@ieee.org [Electronics and Telecommunication Engg. Dept., Jadavpur University, Kolkata 700 032 (India)

2014-10-01

We study field emission from various finite barrier quasi-low dimensional structures, taking image force into account. To proceed, we first formulate an expression for field emission current density from a quantum dot. Transverse dimensions of the dot are then increased in turn, to obtain current densities respectively from quantum wire and quantum well with infinite potential energy barriers. To find out field emission from finite barrier structures, the above analysis is followed with a correction in the energy eigen values. In course, variations of field emission current density with strength of the applied electric field and structure dimensions are computed considering n-GaAs and n-GaAs/Al{sub x}Ga{sub 1−x}As as the semiconductor materials. In each case, the current density is found to increase exponentially with the applied field, while it oscillates with structure dimensions. The magnitude of the emission current is less when the image force is not considered, but retains the similar field dependence. In all cases, the field emission from infinite barrier structures exceeds those from respective finite barrier ones.

Assembly of CdS Quantum Dots onto Hierarchical TiO2 Structure for Quantum Dots Sensitized Solar Cell Applications

Directory of Open Access Journals (Sweden)

Syed Mansoor Ali

2015-05-01

Full Text Available Quantum dot (QD sensitized solar cells based on Hierarchical TiO2 structure (HTS consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate is fabricated. The hierarchical TiO2 structure consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate synthesized by hydrothermal route. The CdS quantum dots were grown by the successive ionic layer adsorption and reaction deposition method. The quantum dot sensitized solar cell based on the hierarchical TiO2 structure shows a current density JSC = 1.44 mA, VOC = 0.46 V, FF = 0.42 and η = 0.27%. The QD provide a high surface area and nano-urchins offer a highway for fast charge collection and multiple scattering centers within the photoelectrode.

Ubiquitous quantum structure. From psychology to finance

International Nuclear Information System (INIS)

Khrennikov, Andrei

2010-01-01

Quantum-like structure is present practically everywhere. Quantum-like (QL) models, i.e. models based on the mathematical formalism of quantum mechanics and its generalizations can be successfully applied to cognitive science, psychology, genetics, economics, finances, and game theory. This book is not about quantum mechanics as a physical theory. The short review of quantum postulates is therefore mainly of historical value: quantum mechanics is just the first example of the successful application of non-Kolmogorov probabilities, the first step towards a contextual probabilistic description of natural, biological, psychological, social, economical or financial phenomena. A general contextual probabilistic model (Vaexjoemodel) is presented. It can be used for describing probabilities in both quantum and classical (statistical) mechanics as well as in the above mentioned phenomena. This model can be represented in a quantum-like way, namely, in complex and more general Hilbert spaces. In this way quantum probability is totally demystified: Born's representation of quantum probabilities by complex probability amplitudes, wave functions, is simply a special representation of this type. (orig.)

Ubiquitous quantum structure. From psychology to finance

Energy Technology Data Exchange (ETDEWEB)

Khrennikov, Andrei [University of Vaexjoe (Sweden). International Center for Mathematical Modeling in Physics and Cognitive Science

2010-07-01

Quantum-like structure is present practically everywhere. Quantum-like (QL) models, i.e. models based on the mathematical formalism of quantum mechanics and its generalizations can be successfully applied to cognitive science, psychology, genetics, economics, finances, and game theory. This book is not about quantum mechanics as a physical theory. The short review of quantum postulates is therefore mainly of historical value: quantum mechanics is just the first example of the successful application of non-Kolmogorov probabilities, the first step towards a contextual probabilistic description of natural, biological, psychological, social, economical or financial phenomena. A general contextual probabilistic model (Vaexjoemodel) is presented. It can be used for describing probabilities in both quantum and classical (statistical) mechanics as well as in the above mentioned phenomena. This model can be represented in a quantum-like way, namely, in complex and more general Hilbert spaces. In this way quantum probability is totally demystified: Born's representation of quantum probabilities by complex probability amplitudes, wave functions, is simply a special representation of this type. (orig.)

Relating Out-of-Time-Order Correlations to Entanglement via Multiple-Quantum Coherences.

Science.gov (United States)

Gärttner, Martin; Hauke, Philipp; Rey, Ana Maria

2018-01-26

Out-of-time-order correlations (OTOCs) characterize the scrambling, or delocalization, of quantum information over all the degrees of freedom of a system and thus have been proposed as a proxy for chaos in quantum systems. Recent experimental progress in measuring OTOCs calls for a more thorough understanding of how these quantities characterize complex quantum systems, most importantly in terms of the buildup of entanglement. Although a connection between OTOCs and entanglement entropy has been derived, the latter only quantifies entanglement in pure systems and is hard to access experimentally. In this work, we formally demonstrate that the multiple-quantum coherence spectra, a specific family of OTOCs well known in NMR, can be used as an entanglement witness and as a direct probe of multiparticle entanglement. Our results open a path to experimentally testing the fascinating idea that entanglement is the underlying glue that links thermodynamics, statistical mechanics, and quantum gravity.

Relating Out-of-Time-Order Correlations to Entanglement via Multiple-Quantum Coherences

Science.gov (United States)

Gärttner, Martin; Hauke, Philipp; Rey, Ana Maria

2018-01-01

Out-of-time-order correlations (OTOCs) characterize the scrambling, or delocalization, of quantum information over all the degrees of freedom of a system and thus have been proposed as a proxy for chaos in quantum systems. Recent experimental progress in measuring OTOCs calls for a more thorough understanding of how these quantities characterize complex quantum systems, most importantly in terms of the buildup of entanglement. Although a connection between OTOCs and entanglement entropy has been derived, the latter only quantifies entanglement in pure systems and is hard to access experimentally. In this work, we formally demonstrate that the multiple-quantum coherence spectra, a specific family of OTOCs well known in NMR, can be used as an entanglement witness and as a direct probe of multiparticle entanglement. Our results open a path to experimentally testing the fascinating idea that entanglement is the underlying glue that links thermodynamics, statistical mechanics, and quantum gravity.

Binding energy of impurity states in an inverse parabolic quantum well under magnetic field

International Nuclear Information System (INIS)

Kasapoglu, E.; Sari, H.; Soekmen, I.

2007-01-01

We have investigated the effects of the magnetic field which is directed perpendicular to the well on the binding energy of the hydrogenic impurities in an inverse parabolic quantum well (IPQW) with different widths as well as different Al concentrations at the well center. The Al concentration at the barriers was always x max =0.3. The calculations were performed within the effective mass approximation, using a variational method. We observe that IPQW structure turns into parabolic quantum well with the inversion effect of the magnetic field and donor impurity binding energy in IPQW strongly depends on the magnetic field, Al concentration at the well center and well dimensions

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

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Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

Multiple-state quantum Otto engine, 1D box system

Energy Technology Data Exchange (ETDEWEB)

Latifah, E., E-mail: enylatifah@um.ac.id [Laboratory of Theoretical Physics and Natural Philosophy, Physics Department, Institut Teknologi Sepuluh Nopember, ITS, Surabaya, Indonesia and Physics Department, Malang State University (Indonesia); Purwanto, A. [Laboratory of Theoretical Physics and Natural Philosophy, Physics Department, Institut Teknologi Sepuluh Nopember, ITS, Surabaya (Indonesia)

2014-03-24

Quantum heat engines produce work using quantum matter as their working substance. We studied adiabatic and isochoric processes and defined the general force according to quantum system. The processes and general force are used to evaluate a quantum Otto engine based on multiple-state of one dimensional box system and calculate the efficiency. As a result, the efficiency depends on the ratio of initial and final width of system under adiabatic processes.

Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells

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Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki

2018-03-01

Resonant-tunneling diodes (RTDs) with auxiliary quantum wells ( e.g., emitter prewell, subwell, and collector postwell) are studied using a Wigner transport equation (WTE) discretized by a thirdorder upwind differential scheme. A flat-band potential profile is used for the WTE simulation. Our calculations revealed functions of the auxiliary wells as follows: The prewell increases the current density ( J) and the peak voltage ( V p ) while decreasing the peak-to-valley current ratio (PVCR), and the postwell decreases J while increasing the PVCR. The subwell affects J and PVCR, but its main effect is to decrease V p . When multiple auxiliary wells are used, each auxiliary well contributes independently to the transport without producing side effects.

Magnetophonon resonance in double quantum wells

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Ploch, D.; Sheregii, E. M.; Marchewka, M.; Wozny, M.; Tomaka, G.

2009-05-01

The experimental results obtained for the magnetotransport in pulsed magnetic fields in the InGaAs/InAlAs double quantum well (DQW) structures of two different shapes of wells and different values of the electron density are reported. The magnetophonon resonance (MPR) was observed for both types of structures within the temperature range 77-125 K. Four kinds of LO phonons are taken into account to interpret the MPR oscillations in the DQW and a method of the Landau level calculation in the DQW is elaborated for this aim. The peculiarity of the MPR in the DQW is the large number of the Landau levels caused by SAS splitting of the electron states (splitting on the symmetric and anti-symmetric states) and the large number of the phonon assistance electron transitions between Landau levels. The significant role of the carrier statistics is shown too. The behavior of the electron states in the DQWs at comparably high temperatures has been studied using the MPR. It is shown that the Huang and Manasreh [Manasreh [Phys. Rev. B 54, 2044 (1996)] model involving screening of exchange interaction is confirmed.

Anti-Stokes Luminescence in High Quality Quantum Wells

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Vinattieri, A.; Bogani, F.; Miotto, A.; Ceccherini, S.

1997-11-01

We present a detailed investigation of the anti-Stokes (AS) luminescence which originates from exciton recombination when below gap excitation is used, in a set of high quality quantum well structures. We observe strong excitonic resonances in the AS signal as measured from photoluminescence and photoluminescence excitation spectra. We demonstrate that neither the electromagnetic coupling between the wells nor the morphological disorder can explain this up-conversion effect. Time-resolved luminescence data after ps excitation and fs correlation spectroscopy results provide clear evidence of the occurrence of a two-step absorption which is assisted by the exciton population resonantly excited by the first photon.

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes

International Nuclear Information System (INIS)

Wang, Jen-Cheng; Fang, Chia-Hui; Wu, Ya-Fen; Chen, Wei-Jen; Kuo, Da-Chuan; Fan, Ping-Lin; Jiang, Joe-Air; Nee, Tzer-En

2012-01-01

Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 °C to 100 °C. The current-dependent electroluminescence (EL) spectra, current–voltage (I–V) curves and luminescence intensity–current (L–I) characteristics of green InGaN/GaN MQW LEDs have been measured to characterize the thermal-related effects on the optoelectrical properties of the InGaN/GaN MQW LEDs. The experimental results show that both the forward voltages decreased with a slope of −3.7 mV/K and the emission peak wavelength increased with a slope of +0.02 nm/K with increasing temperature, indicating a change in the contact resistance between the metal and GaN layers and the existence of a band gap shrinkage effect. The junction temperature estimated from the forward voltage and the emission peak shift varied from 25.6 to 14.5 °C and from 22.4 to 35.6 °C, respectively. At the same time, the carrier temperature decreased from 371.2 to 348.1 °C as estimated from the slope of high-energy side of the emission spectra. With increasing injection current, there was found to be a strong current-dependent blueshift of −0.15 nm/mA in the emission peak wavelength of the EL spectra. This could be attributed to not only the stronger band-filling effect but also the enhanced quantum confinement effect that resulted from the piezoelectric polarization and spontaneous polarization in InGaN/GaN heterostructures. We also demonstrate a helpful and easy way to measure and calculate the junction temperature of InGaN/GaN MQW LEDs. - Highlights: ► We examine the effect of junction temperature on the optoelectrical properties. ► Not only the band-filling effect but also the quantum confinement effect. ► Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ► Carrier transport was responsible for the influences on the

Light-trapping for room temperature Bose-Einstein condensation in InGaAs quantum wells.

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Vasudev, Pranai; Jiang, Jian-Hua; John, Sajeev

2016-06-27

We demonstrate the possibility of room-temperature, thermal equilibrium Bose-Einstein condensation (BEC) of exciton-polaritons in a multiple quantum well (QW) system composed of InGaAs quantum wells surrounded by InP barriers, allowing for the emission of light near telecommunication wavelengths. The QWs are embedded in a cavity consisting of double slanted pore (SP2) photonic crystals composed of InP. We consider exciton-polaritons that result from the strong coupling between the multiple quantum well excitons and photons in the lowest planar guided mode within the photonic band gap (PBG) of the photonic crystal cavity. The collective coupling of three QWs results in a vacuum Rabi splitting of 3% of the bare exciton recombination energy. Due to the full three-dimensional PBG exhibited by the SP2 photonic crystal (16% gap to mid-gap frequency ratio), the radiative decay of polaritons is eliminated in all directions. Due to the short exciton-phonon scattering time in InGaAs quantum wells of 0.5 ps and the exciton non-radiative decay time of 200 ps at room temperature, polaritons can achieve thermal equilibrium with the host lattice to form an equilibrium BEC. Using a SP2 photonic crystal with a lattice constant of a = 516 nm, a unit cell height of 2a=730nm and a pore radius of 0.305a = 157 nm, light in the lowest planar guided mode is strongly localized in the central slab layer. The central slab layer consists of 3 nm InGaAs quantum wells with 7 nm InP barriers, in which excitons have a recombination energy of 0.944 eV, a binding energy of 7 meV and a Bohr radius of aB = 10 nm. We take the exciton recombination energy to be detuned 35 meV above the lowest guided photonic mode so that an exciton-polariton has a photonic fraction of approximately 97% per QW. This increases the energy range of small-effective-mass photonlike states and increases the critical temperature for the onset of a Bose-Einstein condensate. With three quantum wells in the central slab layer

Pressure induced increase of the exciton phonon interaction in ZnO/(ZnMg)O quantum wells

International Nuclear Information System (INIS)

Jarosz, D.; Suchocki, A.; Kozanecki, A.; Teisseyre, H.; Kamińska, A.

2016-01-01

It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO. The intensities of the phonon-replicas in ZnO/(ZnMg)O quantum structures strongly depend on the internal electric field. We performed high-pressure measurements on the single ZnO/(ZnMg)O quantum well. We observed a strong increase of the intensity of the phonon-replicas relative to the zero phonon line. In our opinion this effect is related to pressure induced increase of the strain in quantum structure. As a consequence, an increase of the piezoelectric component of the electric field is observed which leads to an increase of the intensity of the phonon-replicas.

Exciton absorption of entangled photons in semiconductor quantum wells

Science.gov (United States)

Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

2013-03-01

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

Resonant Tunneling in Photonic Double Quantum Well Heterostructures

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Cox Joel

2010-01-01

Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

Fractional Quantum Hall States in a Ge Quantum Well.

Science.gov (United States)

Mironov, O A; d'Ambrumenil, N; Dobbie, A; Leadley, D R; Suslov, A V; Green, E

2016-04-29

Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We analyze the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long-range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarized Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.

InGaAs/InP, quantum wells and quantum wires grown by vapor levitation epitaxy using chloride transport

International Nuclear Information System (INIS)

Cox, H.M.; Morais, P.C.; Hwang, D.M.; Bastos, P.; Gmitter, T.J.; Nazar, L.; Worlock, J.M.; Yablonovitch, E.; Hummel, S.G.

1988-09-01

A variety of InGaAs/InP quantum structures have been grown by vapor levitation epitaxy (VLE) and investigated by low temperature photoluminescence (PL). Excellent long-range uniformity of QW peak positions across a two-inch diameter wafer is achieved. Monolayer thickness variations in single QW's are used to establish an essentially unambiguous correlation of QW thickness with energy upshift for ultra-thin quantum wells. PL evidence is presented of the growth, for the first time by any technique, of an InGaAs/InP QW of single monolayer thickness (2.93 (angstrom)). Quantum wires were fabricated entirely by VLE as thin as one monolayer and estimated to be three unit cells wide. (author) [pt

Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates

International Nuclear Information System (INIS)

Béaur, L.; Bretagnon, T.; Guillet, T.; Brimont, C.; Gallart, M.; Gil, B.; Gilliot, P.; Morhain, C.

2013-01-01

We report on absorption phenomena in ZnO/(Zn, Mg)O quantum wells grown along the c-axis by molecular beam epitaxy. The optical properties of such quantum wells are affected by a huge internal electric field. For wide quantum wells the absorption is driven by Quantum Confined Stark Effect. Phonon-assisted formation of excitons is observed in the case of thin quantum wells. The physical origin of these hot excitons is determined by using both low temperature (T=10 K) photoluminescence excitation spectroscopy and reflectivity measurements. -- Highlights: ► High structural quality ZnO/(Zn, Mg)O quantum wells are growth along the polar c-direction. ► Indirect phonon-assisted formation of excitons in the thin single quantum wells. ► Strong internal electric field present in polar heterostructures prevents the observation of hot excitons