f-electron systems: pushing band theory

International Nuclear Information System (INIS)

Koelling, D.D.

1991-01-01

The f-electron orbitrals have always been the ''incomplete atomic shells acting as local moments, and weakly interacting with the remaining electronic structure'' in the minds of most people. So examining them using a band theory where one views them as itinerant was once - and to some extent even today still is - considered with some skepticism. Nonetheless, a very significant community has successfully utilized band theory as a probe of the electronic structure of the appropriate actinides and rare earths. Those people actually using the approach would be the first to declare that it is not the whole solution. Instead, one is pushing and even exceeding its limit of applicability. However, the apropriate procedure is to push the model consistently to its limits, patch where possible, and then look to see where discrepancies remain. I propose to offer a selected review of past developments (emphasizing the career to data of A.J. Freeman in this area), offer a list of interesting puzzles for the future, and then make some guesses as to the techniques one might want to use. (orig.)

Model Development for MODIS Thermal Band Electronic Crosstalk

Science.gov (United States)

Chang, Tiejun; Wu, Aisheng; Geng, Xu; Li, Yonghonh; Brinkman, Jake; Keller, Graziela; Xiong, Xiaoxiong

2016-01-01

MODerate-resolution Imaging Spectroradiometer (MODIS) has 36 bands. Among them, 16 thermal emissive bands covering a wavelength range from 3.8 to 14.4 m. After 16 years on-orbit operation, the electronic crosstalk of a few Terra MODIS thermal emissive bands developed substantial issues that cause biases in the EV brightness temperature measurements and surface feature contamination. The crosstalk effects on band 27 with center wavelength at 6.7 m and band 29 at 8.5 m increased significantly in recent years, affecting downstream products such as water vapor and cloud mask. The crosstalk effect is evident in the near-monthly scheduled lunar measurements, from which the crosstalk coefficients can be derived. The development of an alternative approach is very helpful for independent verification.In this work, a physical model was developed to assess the crosstalk impact on calibration as well as in Earth view brightness temperature retrieval. This model was applied to Terra MODIS band 29 empirically to correct the Earth brightness temperature measurements. In the model development, the detectors nonlinear response is considered. The impact of the electronic crosstalk is assessed in two steps. The first step consists of determining the impact on calibration using the on-board blackbody (BB). Due to the detectors nonlinear response and large background signal, both linear and nonlinear coefficients are affected by the crosstalk from sending bands. The second step is to calculate the effects on the Earth view brightness temperature retrieval. The effects include those from affected calibration coefficients and the contamination of Earth view measurements. This model links the measurement bias with crosstalk coefficients, detector non-linearity, and the ratio of Earth measurements between the sending and receiving bands. The correction of the electronic cross talk can be implemented empirically from the processed bias at different brightness temperature. The implementation

Electronic pairing mechanism due to band modification with increasing pair number

International Nuclear Information System (INIS)

Mizia, J.

1995-01-01

It is shown that a shift of an electron band with electron occupation number n, which is changing during the transition to the superconducting state, can lower the total energy of the system. In fact it will bring a negative contribution to the pairing potential, which is proportional to the product of the electron band shift with occupation number and the charge transfer during the transition to the superconducting state. The shift of the electron band comes from the change of stresses and the change of correlation effects in the CuO 2 plane with n, that in turn is caused by the changing oxygen concentration. This model explains the phenomenological success of Hirsch's model, which gives no explanation how the band shift in energy can give rise to superconductivity. (orig.)

Measurement of the band gap by reflection electron energy loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Vos, Maarten, E-mail: maarten.vos@anu.edu.au [Electronic Materials Engineering Department, Research School of Physics and Engineering, The Australian National University, Canberra 0200 (Australia); King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, OR 97124 (United States); French, Benjamin L. [Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ 85248 (United States)

2016-10-15

Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

Measurement of the band gap by reflection electron energy loss spectroscopy

International Nuclear Information System (INIS)

Vos, Maarten; King, Sean W.; French, Benjamin L.

2016-01-01

Highlights: • Semiconductors are measured (without surface preparation) using REELS. • At low beam energies it is difficult to measure band gap due to surface impurities. • At very high energies it is difficult to measure band gap due to recoil effect. • At intermediate energies (around 5 keV) one obtains a good estimate of the band gap. - Abstract: We investigate the possibilities of measuring the band gap of a variety of semiconductors and insulators by reflection electron energy loss spectroscopy without additional surface preparation. The band gap is a bulk property, whereas reflection energy loss spectroscopy is generally considered a surface sensitive technique. By changing the energy of the incoming electrons, the degree of surface sensitivity can be varied. Here, we present case studies to determine the optimum condition for the determination of the band gap. At very large incoming electron energies recoil effects interfere with the band gap determination, whereas at very low energies surface effects are obscuring the band gap without surface preparation. Using an incoming energy of 5 keV a reasonable estimate of the band gap is obtained in most cases.

Electron correlations in narrow energy bands: modified polar model approach

Directory of Open Access Journals (Sweden)

L. Didukh

2008-09-01

Full Text Available The electron correlations in narrow energy bands are examined within the framework of the modified form of polar model. This model permits to analyze the effect of strong Coulomb correlation, inter-atomic exchange and correlated hopping of electrons and explain some peculiarities of the properties of narrow-band materials, namely the metal-insulator transition with an increase of temperature, nonlinear concentration dependence of Curie temperature and peculiarities of transport properties of electronic subsystem. Using a variant of generalized Hartree-Fock approximation, the single-electron Green's function and quasi-particle energy spectrum of the model are calculated. Metal-insulator transition with the change of temperature is investigated in a system with correlated hopping. Processes of ferromagnetic ordering stabilization in the system with various forms of electronic DOS are studied. The static conductivity and effective spin-dependent masses of current carriers are calculated as a function of electron concentration at various DOS forms. The correlated hopping is shown to cause the electron-hole asymmetry of transport and ferromagnetic properties of narrow band materials.

Electronic band structures of binary skutterudites

Energy Technology Data Exchange (ETDEWEB)

Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)

2015-10-25

The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.

Electronic band structures of binary skutterudites

International Nuclear Information System (INIS)

Khan, Banaras; Aliabad, H.A. Rahnamaye; Saifullah; Jalali-Asadabadi, S.; Khan, Imad; Ahmad, Iftikhar

2015-01-01

The electronic properties of complex binary skutterudites, MX 3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures

Electronic materials with a wide band gap: recent developments

Directory of Open Access Journals (Sweden)

Detlef Klimm

2014-09-01

Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.

Engineering flat electronic bands in quasiperiodic and fractal loop geometries

Energy Technology Data Exchange (ETDEWEB)

Nandy, Atanu, E-mail: atanunandy1989@gmail.com; Chakrabarti, Arunava, E-mail: arunava_chakrabarti@yahoo.co.in

2015-11-06

Exact construction of one electron eigenstates with flat, non-dispersive bands, and localized over clusters of various sizes is reported for a class of quasi-one-dimensional looped networks. Quasiperiodic Fibonacci and Berker fractal geometries are embedded in the arms of the loop threaded by a uniform magnetic flux. We work out an analytical scheme to unravel the localized single particle states pinned at various atomic sites or over clusters of them. The magnetic field is varied to control, in a subtle way, the extent of localization and the location of the flat band states in energy space. In addition to this we show that an appropriate tuning of the field can lead to a re-entrant behavior of the effective mass of the electron in a band, with a periodic flip in its sign. - Highlights: • Exact construction of eigenstates with flat and dispersive bands is reported. • Competition between translational order and growth of aperiodicity is discussed. • The effect of magnetic field on the location of flat band states is shown. • Flux tunable re-entrant behavior of the effective mass of electron is studied.

Investigation on the optimal magnetic field of a cusp electron gun for a W-band gyro-TWA

Science.gov (United States)

Zhang, Liang; He, Wenlong; Donaldson, Craig R.; Cross, Adrian W.

2018-05-01

High efficiency and broadband operation of a gyrotron traveling wave amplifier (gyro-TWA) require a high-quality electron beam with low-velocity spreads. The beam velocity spreads are mainly due to the differences of the electric and magnetic fields that the electrons withstand the electron gun. This paper investigates the possibility to decouple the design of electron gun geometry and the magnet system while still achieving optimal results, through a case study of designing a cusp electron gun for a W-band gyro-TWA. A global multiple-objective optimization routing was used to optimize the electron gun geometry for different predefined magnetic field profiles individually. Their results were compared and the properties of the required magnetic field profile are summarized.

Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

International Nuclear Information System (INIS)

Lee, Ki-Won; Kim, Young-You

2004-01-01

In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

Multiple infrared bands absorber based on multilayer gratings

Science.gov (United States)

Liu, Xiaoyi; Gao, Jinsong; Yang, Haigui; Wang, Xiaoyi; Guo, Chengli

2018-03-01

The present study offers an Ag/Si multilayer-grating microstructure based on an Si substrate. The microstructure exhibits designable narrowband absorption in multiple infrared wavebands, especially in mid- and long-wave infrared atmospheric windows. We investigate its resonance mode mechanism, and calculate the resonance wavelengths by the Fabry-Perot and metal-insulator-metal theories for comparison with the simulation results. Furthermore, we summarize the controlling rules of the absorption peak wavelength of the microstructure to provide a new method for generating a Si-based device with multiple working bands in infrared.

Bunch monitor for an S-band electron linear accelerator

International Nuclear Information System (INIS)

Otake, Yuji; Nakahara, Kazuo

1991-01-01

The measurement of bunch characteristics in an S-band electron linear accelerator is required in order to evaluate the quality of accelerated electron beams. A new-type bunch monitor has been developed which combines micro-stripline technology with an air insulator and wall-current monitoring technology. The obtained time resolution of the monitor was more than 150 ps. This result shows that the monitor can handle the bunch number of an S-band linac. The structure of the monitor is suitable for being installed in the vacuum area, since it is constructed of only metal and ceramic parts. It can therefore easily be employed in an actual machine

Multiple bands characteristics of tree-ring and age of haloxylon ammodendron in gurbantunggut desert

International Nuclear Information System (INIS)

Song, Y.; Zhou, C.

2015-01-01

The characteristics of the multiple bands of Haloxylon ammodendron (C.A. Mey) Bunge tree-ring were studied in three edaphic types. Age equations were derived relating ground diameter and tree height, and the effects of irrigation on numbers and widths of growth bands at the longest radius were analyzed. Results showed that the number of growth bands ranged from 3.3 to 6.3 per year, the widths ranged between 0.181 mm and 0.473 mm. Multiple growth bands formed every growing season, leading to the conclusion that multiple growth bands in H. ammodendron tree-ring are a natural feature. A dark brown layer and a light brown one make up one growth band. The dark brown layers consists of fibres and vessels as well as some ray parenchyma, and each fibres layers with 22-35 cell layers; the light brown layers formed by vessels, fibres and abundant paratracheal axial parenchyma are 4-15 cell layers. The widths of growth bands at the longest radius increased significantly as the irrigation amount increased in three edaphic types (p<0.01). The numbers of growth bands at the longest radius had significant positive correlation with irrigation times. The ratio of dark brown layers to light brown layers of growth bands at the longest radius appeared to have a rising tendency with the increase in irrigation amount and times. (author)

Band structure of an electron in a kind of periodic potentials with singularities

Science.gov (United States)

Hai, Kuo; Yu, Ning; Jia, Jiangping

2018-06-01

Noninteracting electrons in some crystals may experience periodic potentials with singularities and the governing Schrödinger equation cannot be defined at the singular points. The band structure of a single electron in such a one-dimensional crystal has been calculated by using an equivalent integral form of the Schrödinger equation. Both the perturbed and exact solutions are constructed respectively for the cases of a general singular weak-periodic system and its an exactly solvable version, Kronig-Penney model. Any one of them leads to a special band structure of the energy-dependent parameter, which results in an effective correction to the previous energy-band structure and gives a new explanation for forming the band structure. The used method and obtained results could be a valuable aid in the study of energy bands in solid-state physics, and the new explanation may trigger investigation to different physical mechanism of electron band structures.

Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

Science.gov (United States)

Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

2012-01-01

The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

A Dual-Band Multiple Input Multiple Output Frequency Agile Antenna for GPSL1/Wi-Fi/WLAN2400/LTE Applications

Directory of Open Access Journals (Sweden)

Sajid Aqeel

2016-01-01

Full Text Available A novel dual-band, single element multiple input multiple output (MIMO dielectric resonator antenna (DRA with a modest frequency tuning ability is presented in this communication. The proposed antenna operates at GPS L1/Bluetooth/Wi-Fi/LTE2500/WLAN2400 frequency bands. A single dielectric resonator element is fed by two coaxial probes to excite the orthogonal modes. A couple of slots are introduced on the ground plane to improve the isolation between antenna ports. The slots also serve the purpose of reconfiguration in the lower band on placement of switches at optimized locations. The measured impedance bandwidth is 5.16% (1.41–1.49 GHz in the lower band and 26% (2.2–2.85 GHz in the higher band. The lower band reconfigures with an impedance bandwidth of 6.5% (1.55–1.65 GHz when PIN diodes are switched ON. The gain, efficiency, correlation coefficient, and diversity gain of the MIMO DRA are presented with a close agreement between simulated and measured results.

Thermoelectric band engineering: The role of carrier scattering

Science.gov (United States)

Witkoske, Evan; Wang, Xufeng; Lundstrom, Mark; Askarpour, Vahid; Maassen, Jesse

2017-11-01

Complex electronic band structures, with multiple valleys or bands at the same or similar energies, can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.

Tunable valley polarization by a gate voltage when an electron tunnels through multiple line defects in graphene.

Science.gov (United States)

Liu, Zhe; Jiang, Liwei; Zheng, Yisong

2015-02-04

By means of an appropriate wave function connection condition, we study the electronic structure of a line defect superlattice of graphene with the Dirac equation method. We obtain the analytical dispersion relation, which can simulate well the tight-binding numerical result about the band structure of the superlattice. Then, we generalize this theoretical method to study the electronic transmission through a potential barrier where multiple line defects are periodically patterned. We find that there exists a critical incident angle which restricts the electronic transmission through multiple line defects within a specific incident angle range. The critical angle depends sensitively on the potential barrier height, which can be modulated by a gate voltage. As a result, non-trivial transmissions of K and K' valley electrons are restricted, respectively, in two distinct ranges of the incident angle. Our theoretical result demonstrates that a gate voltage can act as a feasible measure to tune the valley polarization when electrons tunnel through multiple line defects.

Ka-Band Electronically Steered CubeSat Antenna, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Kymeta Government Solutions (KGS) designed, analyzed, built, tested, and delivered a small, lightweight, low-cost, low-power electronically steered Ka-band prototype...

Electronic band structure study of colossal magnetoresistance in Tl 2Mn 2O 7

Science.gov (United States)

Seo, D.-K.; Whangbo, M.-H.; Subramanian, M. A.

1997-02-01

The electronic structure of Tl 2Mn 2O 7 was examined by performing tight binding band calculations. The overlap between the Mn t 2g- and Tl 6 s-block bands results in a partial filling of the Tl 6 s-block bands. The associated Fermi surface consists of 12 cigar-shape electron pockets with each electron pocket about {1}/{1000} of the first Brillouin zone in size. The Tl 6 s-block bands have orbital contributions from the Mn atoms, and the carrier density is very low. These are important for the occurrence of a colossal magnetoresistance in Tl 2Mn 2O 7.

Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy.

Science.gov (United States)

Jobst, Johannes; van der Torren, Alexander J H; Krasovskii, Eugene E; Balgley, Jesse; Dean, Cory R; Tromp, Rudolf M; van der Molen, Sense Jan

2016-11-29

High electron mobility is one of graphene's key properties, exploited for applications and fundamental research alike. Highest mobility values are found in heterostructures of graphene and hexagonal boron nitride, which consequently are widely used. However, surprisingly little is known about the interaction between the electronic states of these layered systems. Rather pragmatically, it is assumed that these do not couple significantly. Here we study the unoccupied band structure of graphite, boron nitride and their heterostructures using angle-resolved reflected-electron spectroscopy. We demonstrate that graphene and boron nitride bands do not interact over a wide energy range, despite their very similar dispersions. The method we use can be generally applied to study interactions in van der Waals systems, that is, artificial stacks of layered materials. With this we can quantitatively understand the 'chemistry of layers' by which novel materials are created via electronic coupling between the layers they are composed of.

Multiple mobility edges in a 1D Aubry chain with Hubbard interaction in presence of electric field: Controlled electron transport

Science.gov (United States)

Saha, Srilekha; Maiti, Santanu K.; Karmakar, S. N.

2016-09-01

Electronic behavior of a 1D Aubry chain with Hubbard interaction is critically analyzed in presence of electric field. Multiple energy bands are generated as a result of Hubbard correlation and Aubry potential, and, within these bands localized states are developed under the application of electric field. Within a tight-binding framework we compute electronic transmission probability and average density of states using Green's function approach where the interaction parameter is treated under Hartree-Fock mean field scheme. From our analysis we find that selective transmission can be obtained by tuning injecting electron energy, and thus, the present model can be utilized as a controlled switching device.

Kinks in the σ band of graphene induced by electron-phonon coupling.

Science.gov (United States)

Mazzola, Federico; Wells, Justin W; Yakimova, Rositza; Ulstrup, Søren; Miwa, Jill A; Balog, Richard; Bianchi, Marco; Leandersson, Mats; Adell, Johan; Hofmann, Philip; Balasubramanian, T

2013-11-22

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the σ band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the σ band of graphene that has a binding energy of more than ≈3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of σ states. The existence of the effect suggests a very weak coupling of holes in the σ band not only to the π electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of λ≈1.

Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

International Nuclear Information System (INIS)

Lunca-Popa, Petru; Brand, J I; Balaz, Snjezana; Rosa, Luis G; Boag, N M; Bai Mengjun; Robertson, B W; Dowben, P A

2005-01-01

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C 2 B 10 H 12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C 2 B 10 boron carbide and is consistent with electron diffraction results

Electronic band structure of magnetic bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

2014-01-01

Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

Energy Technology Data Exchange (ETDEWEB)

Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2015-08-07

The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

Design of an Electronic Chest-Band

Science.gov (United States)

Atakan, R.; Acikgoz Tufan, H.; Baskan, H.; Eryuruk, S. H.; Akalin, N.; Kose, H.; Li, Y.; Kursun Bahadir, S.; Kalaoglu, F.

2017-10-01

In this study, an electronic chest strap prototype was designed for measuring fitness level, performance optimization, mobility and fall detection. Knitting technology is used for production by using highly elastic nylon yarn. In order to evaluate comfort performance of the garment, yarn strength and elongation, air permeability, moisture management and FAST tests (Fabric Assurance Fabric Testing) were carried out, respectively. After testing of textile part of the chest band, IMU sensors were integrated onto the garment by means of conductive yarns. Electrical conductivity of the circuit was also assessed at the end. Results indicated that the weight and the thickness of the product are relatively high for sports uses and it has a negative impact on comfort properties. However, it is highly stretchable and moisture management properties are still in acceptable values. From the perspective of possible application areas, developed smart chest band in this research could be used in sports facilities as well as health care applications for elderly and disabled people.

Tunneling emission of electrons from semiconductors' valence bands in high electric fields

International Nuclear Information System (INIS)

Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

2006-01-01

Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

Band Gap Modulated by Electronic Superlattice in Blue Phosphorene.

Science.gov (United States)

Zhuang, Jincheng; Liu, Chen; Gao, Qian; Liu, Yani; Feng, Haifeng; Xu, Xun; Wang, Jiaou; Zhao, Jijun; Dou, Shi Xue; Hu, Zhenpeng; Du, Yi

2018-05-22

Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.

Compact printed high rejection triple band-notch UWB antenna with multiple wireless applications

Directory of Open Access Journals (Sweden)

Manish Sharma

2016-09-01

Full Text Available In this paper, small printed urn-shape triple notch ultra-wideband (UWB monopole antenna with diverse wireless applications is presented. Notch bands include WiMAX (IEEE802.16 3.30–3.80 GHz, WLAN IEEE802.11a/h/j/n (5.15–5.35 GHz, 5.25–5.35 GHz, 5.47–5.725 GHz, 5.725–5.825 GHz, and X-band downlink satellite system (7.25–7.75 GHz and other multiple wireless services as close range radar (8–12 GHz in X-band & satellite communication (12–18 GHz in Ku-band. By including T-shape stub and etching two C-shaped slots on the radiating patch, triple band-notch function is obtained with measured high band rejection (VSWR = 16.54 at 3.60 GHz, VSWR = 22.35 at 5.64 GHz and VSWR = 6.38 at 7.64 GHz and covers a wide useable fractional bandwidth of 154.56% (2.49–19.41 GHz. In short the antenna offers triple band-notch UWB systems as a compact multifunctional antenna to reduce the number of antennas installed in wireless devices for accessing multiple wireless networks with wide radiation pattern.

Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

International Nuclear Information System (INIS)

Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.

2015-01-01

Reflection electron energy loss spectra from some insulating materials (CaCO 3 , Li 2 CO 3 , and SiO 2 ) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO 2 , good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E gap ) 1.5 . For CaCO 3 , the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li 2 CO 3 (7.5 eV) is the first experimental estimate

Reconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

Science.gov (United States)

Nakayama, K.; Miyata, Y.; Phan, G. N.; Sato, T.; Tanabe, Y.; Urata, T.; Tanigaki, K.; Takahashi, T.

2014-12-01

We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (Tc˜8 K ), which exhibits a tetragonal-to-orthorhombic structural transition at Ts˜90 K . At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T ˜110 K , slightly above Ts, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

Science.gov (United States)

Henck, Hugo; Ben Aziza, Zeineb; Pierucci, Debora; Laourine, Feriel; Reale, Francesco; Palczynski, Pawel; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fèvre, Patrick; Lhuillier, Emmanuel; Wakamura, Taro; Mattevi, Cecilia; Rault, Julien E.; Calandra, Matteo; Ouerghi, Abdelkarim

2018-04-01

Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single-layer W S2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, and density functional theory (DFT) calculations. The results show good electronic properties as well as a well-defined band arising from the strong splitting of the single-layer W S2 valence band at the K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single-layer W S2 . Our results provide an important reference for future studies of electronic properties of W S2 and its applications in valleytronic devices.

An L-Band Polarized Electron PWT Photoinjector for the International Linear Collider (ILC)

CERN Document Server

Yu, David; Chen Ping; Lundquist, Martin; Luo, Yan; Smirnov, Alexei Yu

2005-01-01

A multi-cell, standing-wave, L-band, p-mode, plane-wave-transformer (PWT) photoinjector with an integrated photocathode in a novel linac structure is proposed by DULY Research Inc. as a polarized electron source. The PWT photoinjector is capable of operation in ultra high vacuum and moderate field gradient. Expected performance of an L-band polarized electron PWT injector operating under the parameters for the International Linear Collider is presented. The projected normalized transverse rms emittance is an order of magnitude lower than that produced with a polarized electron dc gun followed by subharmonic bunchers.

Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

Energy Technology Data Exchange (ETDEWEB)

Matetskiy, A.V., E-mail: mateckij@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Bondarenko, L.V.; Tupchaya, A.Y.; Gruznev, D.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Eremeev, S.V. [Institute of Strength Physics and Materials Science, 634021 Tomsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

2017-06-01

Highlights: • Modification of electronic properties of ultrathin Bi films by adsorbates is demonstrated. • Due to electron doping from Cs adatoms, surface-state bands shift to higher binding energies. • As a result, only electron pockets are left in the Fermi map. • Tin acts as an acceptor dopant for Bi, shifting Fermi level upward. • As a result, only hole pockets are left in the Fermi map. - Abstract: Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.

Science.gov (United States)

Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A

2016-01-29

We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.

Two-band superconductor magnesium diboride

International Nuclear Information System (INIS)

Xi, X X

2008-01-01

This review focuses on the most important features of the 40 K superconductor MgB 2 -the weakly interacting multiple bands (the σ and π bands) and the distinct multiple superconducting energy gaps (the σ and π gaps). Even though the pairing mechanism of superconductor MgB 2 is the conventional electron-phonon coupling, the prominent influence of the two bands and two gaps on its properties sets it apart from other superconductors. It leads to markedly different behaviors in upper critical field, vortex structure, magnetoresistance and many other superconducting and normal-state properties in MgB 2 from single-band superconductors. Further, it gives rise to new physics that does not exist in single-band superconductors, such as the internal Josephson effects between the two order parameters. These unique phenomena depend sensitively on scattering inside and between the two bands, and the intraband and interband scattering can be modified by chemical substitution and irradiation. MgB 2 has brought unprecedented attention to two-band superconductivity, which has been found to exist in other old and new superconductors. The legacy of MgB 2 will be long lasting because of this, as well as the lessons it teaches in terms of the search for new phonon-mediated higher T c superconductors

Electronic band structure of TiFese2 in ferromagnetic phase

International Nuclear Information System (INIS)

Jahangirli, Z.A.; Mimura, K.; Shim, Y.; Mamedov, N.T.; Wakita, K.; Orudzhev, G.S.; Jahangirli, Z.A.

2011-01-01

Electronic band structure of crystalline TiFeSe 2 has been calculated using full-potential method of Linear Augmented Plane Wave (LAPW) in density-functional approach with exchange-correlation potential taken in Generalized Gradient Approximation (GGA). The chemical bond in TiFeSe 2 is shown to be metallic because energies of 3d-electrons localized at iron atoms are close to Fermi energy level

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

International Nuclear Information System (INIS)

Li, Wei; Zhang, Qin; Kirillov, Oleg A.; Levin, Igor; Richter, Curt A.; Gundlach, David J.; Nguyen, N. V.; Bijesh, R.; Datta, S.; Liang, Yiran; Peng, Lian-Mao; Liang, Xuelei

2014-01-01

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al 2 O 3 /InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al 2 O 3 conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al 2 O 3 valence band to the bottom of the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance

Band-gap creation by icosahedral symmetry in nearly-free-electron materials

International Nuclear Information System (INIS)

Carlsson, A.E.

1993-01-01

A series of numerical electronic density-of-states calculations is performed for rational approximants to a model one-electron potential based on icosahedrally arranged plane-wave components. It is found that high-order approximants can have band gaps even if the low-order approximants do not; furthermore, the magnitude of the gap increases with the order of the approximant. The results are interpreted via a two- and three-wave analysis of the energy eigenvalues at the pseudo-Jones-zone faces and edges. It is also found that the mechanism of band-gap reduction in the rational approximants is the presence of a small density of gap states. An analytic calculation shows that these gap states result from a splitting of threefold and pseudothreefold states at the valence-band edge when the icosahedral symmetry is broken. The splitting is proportional to the error with which the ratio between the approximant indices approximates τ, the golden mean. Finally, an application to the AlCuLi system is presented

Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

Energy Technology Data Exchange (ETDEWEB)

Vos, M. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Marmitt, G. G. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970 Porto Alegre, RS (Brazil); Finkelstein, Y. [Nuclear Research Center — Negev, Beer-Sheva 84190 (Israel); Moreh, R. [Physics Department, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

2015-09-14

Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.

Kinks in the σ Band of Graphene Induced by Electron-Phonon Coupling

DEFF Research Database (Denmark)

Mazzola, Federico; Wells, Justin; Yakimova, Rosita

2013-01-01

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cutoff in the Fermi-Dirac distribution. They are therefore not expected for the band...... of graphene that has a binding energy of more than 3:5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cutoff in the density of states. The existence of the effect suggests a very weak coupling...

Cerebrospinal fluid oligoclonal bands and progression of disability in multiple sclerosis

NARCIS (Netherlands)

Koch, M.; Heersema, D.; Mostert, J.; Teelken, A.; De Keyser, J.

Antibody-mediated inflammation is believed to contribute to tissue injury in multiple sclerosis (MS). The majority of patients with MS have oligoclonal bands (OCB), corresponding to antibodies against a variety of antigens, in their cerebrospinal fluid (CSF). The relation of CSF OCB and disease

Strain localization band width evolution by electronic speckle pattern interferometry strain rate measurement

Energy Technology Data Exchange (ETDEWEB)

Guelorget, Bruno [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)], E-mail: bruno.guelorget@utt.fr; Francois, Manuel; Montay, Guillaume [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)

2009-04-15

In this paper, electronic speckle pattern interferometry strain rate measurements are used to quantify the width of the strain localization band, which occurs when a sheet specimen is submitted to tension. It is shown that the width of this band decreases with increasing strain. Just before fracture, this measured width is about five times wider than the shear band and the initial sheet thickness.

Sub-band gap photo-enhanced secondary electron emission from high-purity single-crystal chemical-vapor-deposited diamond

International Nuclear Information System (INIS)

Yater, J. E.; Shaw, J. L.; Pate, B. B.; Feygelson, T. I.

2016-01-01

Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron

Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

KAUST Repository

Waterhouse, G. I. N.; Wahab, A. K.; Al-Oufi, M.; Jovic, V.; Anjum, Dalaver H.; Sun-Waterhouse, D.; Llorca, J.; Idriss, H.

2013-01-01

Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2

KAUST Repository

Waterhouse, G. I. N.

2013-10-10

Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.

Relativistic band-structure calculations for electronic properties of actinide dioxides

International Nuclear Information System (INIS)

Maehira, Takahiro; Hotta, Takashi

2007-01-01

Energy band structures of actinide dioxides AnO 2 (An=Th, U, Np, and Pu) are investigated by a relativistic linear augmented-plane-wave method with the exchange-correlation potential in a local density approximation (LDA). It is found in common that the energy bands in the vicinity of the Fermi level are mainly due to the hybridization between actinide 5f and oxygen 2p electrons. By focusing on the crystalline electric field states, we point out the problem in the application of the LDA to AnO 2

Development of an X-Band 50 MW Multiple Beam Klystron

International Nuclear Information System (INIS)

Song Liqun; Ferguson, Patrick; Ives, R. Lawrence; Miram, George; Marsden, David; Mizuhara, Max

2003-01-01

Calabazas Creek Research, Inc. is developing an X-band 50 MW multiple beam klystron (MBK) on a DOE SBIR Phase II grant. The electrical design and preliminary mechanical design were completed on the Phase I. This MBK consists of eight discrete klystron circuits driven by eight electron beams located symmetrically on a circle with a radius of 6.3 cm. Each beam operates at 190 kV and 66 A. The eight beam electron gun is in development on a DOE SBIR Phase II grant. Each circuit consists of an input cavity, two gain cavities, three penultimate cavities, and a three cavity output circuit operating in the PI/2 mode. Ring resonators were initially proposed for the complete circuit; however, low beam -- wave interaction resulted in the necessity to use discrete cavities for all eight circuits. The input cavities are coupled via hybrid waveguides to ensure constant drive power amplitude and phase. The output circuits can either be combined using compact waveguide twists driving a TE01 high power window or combined into a TM04 mode converter driving the same TE01 window. The gain and efficiency for a single circuit has been optimized using KLSC, a 2 1/2D large signal klystron code. Simulations for a single circuit predict an efficiency of 53% for a single output cavity and 55% for the three cavity output resonator. The total RF output power for this MBK is 55 MW. During the Phase II emphasis will be given to cost reduction techniques resulting in a robust - high efficient - long life high power amplifier

Electronic structures and band gaps of chains and sheets based on phenylacetylene units

International Nuclear Information System (INIS)

Kondo, Masakazu; Nozaki, Daijiro; Tachibana, Masamitsu; Yumura, Takashi; Yoshizawa, Kazunari

2005-01-01

We investigate the electronic structures of polymers composed of π-conjugated phenylacetylene (PA) units, m-PA-based and p-PA-based wires, at the extended Hueckel level of theory. It is demonstrated that these conjugated systems should have a variety of electric conductance. All of the one-dimensional (1D) chains and the two-dimensional (2D) sheet based on the m-PA unit are insulators with large band gaps of 2.56 eV because there is no effective orbital interaction with neighboring chains. On the other hand, p-PA-based 1D chains have relatively small band gaps that decrease with an increase in chain width (1.17-1.74 eV) and are semiconductive. The p-PA-based sheet called 'graphyne', a 2D-limit of the p-PA-based 1D chains, shows a small band gap of 0.89 eV. The variety of band electronic structures is discussed in terms of frontier crystal orbitals

Giant modulation of the electronic band gap of carbon nanotubes by dielectric screening

NARCIS (Netherlands)

Aspitarte, Lee; McCulley, Daniel R.; Bertoni, Andrea; Island, J.O.; Ostermann, Marvin; Rontani, Massimo; Steele, G.A.; Minot, Ethan D.

2017-01-01

Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly driven by electron-electron (e-e) interactions and

Tight binding electronic band structure calculation of achiral boron nitride single wall nanotubes

International Nuclear Information System (INIS)

Saxena, Prapti; Sanyal, Sankar P

2006-01-01

In this paper we report the Tight-Binding method, for the electronic structure calculations of achiral single wall Boron Nitride nanotubes. We have used the contribution of π electron only to define the electronic band structure for the solid. The Zone-folding method is used for the Brillouin Zone definition. Calculation of tight binding model parameters is done by fitting them to available experimental results of two-dimensional hexagonal monolayers of Boron Nitride. It has been found that all the boron nitride nanotubes (both zigzag and armchair) are constant gap semiconductors with a band gap of 5.27eV. All zigzag BNNTs are found to be direct gap semiconductors while all armchair nanotubes are indirect gap semiconductors. (author)

Electronic Band Structure of BaCo_{2}As_{2}: A Fully Doped Ferropnictide Analog with Reduced Electronic Correlations

Directory of Open Access Journals (Sweden)

N. Xu

2013-01-01

Full Text Available We report an investigation with angle-resolved photoemission spectroscopy of the Fermi surface and electronic band structure of BaCo_{2}As_{2}. Although its quasinesting-free Fermi surface differs drastically from that of its Fe-pnictide cousins, we show that the BaCo_{2}As_{2} system can be used as an approximation to the bare unoccupied band structure of the related BaFe_{2-x}Co_{x}As_{2} and Ba_{1-x}K_{x}Fe_{2}As_{2} compounds. However, our experimental results, in agreement with dynamical-mean-field-theory calculations, indicate that electronic correlations are much less important in BaCo_{2}As_{2} than in the ferropnictides. Our findings suggest that this effect is due to the increased filling of the electronic 3d shell in the presence of significant Hund’s exchange coupling.

Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

Science.gov (United States)

Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

2017-07-13

Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

A tapered multi-gap multi-aperture pseudospark-sourced electron gun based X-band slow wave oscillator

Science.gov (United States)

Kumar, N.; Lamba, R. P.; Hossain, A. M.; Pal, U. N.; Phelps, A. D. R.; Prakash, R.

2017-11-01

The experimental study of a tapered, multi-gap, multi-aperture pseudospark-sourced electron gun based X-band plasma assisted slow wave oscillator is presented. The designed electron gun is based on the pseudospark discharge concept and has been used to generate a high current density and high energy electron beam simultaneously. The distribution of apertures has been arranged such that the field penetration potency inside the backspace of the hollow-cathode is different while passing through the tapered gap region. This leads to non-concurrent ignition of the discharge through all the channels which is, in general, quite challenging in the case of multi-aperture plasma cathode electron gun geometries. Multiple and successive hollow cathode phases are reported from this electron gun geometry, which have been confirmed using simulations. This geometry also has led to the achievement of ˜71% fill factor inside the slow wave oscillator for an electron beam of energy of 20 keV and a beam current density in the range of 115-190 A/cm2 at a working argon gas pressure of 18 Pa. The oscillator has generated broadband microwave output in the frequency range of 10-11.7 GHz with a peak power of ˜10 kW for ˜50 ns.

Photoelectric emission from negative-electron-affinity diamond (111) surfaces: Exciton breakup versus conduction-band emission

International Nuclear Information System (INIS)

Bandis, C.; Pate, B.B.

1995-01-01

We have recently reported that bound electron-hole pairs (Mott-Wannier excitons) are the dominant source of photoelectron emission from specially prepared [''as-polished'' C(111)-(1x1):H] negative-electron-affinity diamond surfaces for near-band-gap excitation up to 0.5 eV above threshold [C. Bandis and B. B. Pate, Phys. Rev. Lett. 74, 777 (1995)]. It was found that photoexcited excitons transport to the surface, break up, and emit their electron. In this paper, we extend the study of exciton-derived emission to include partial yield (constant final-state) analysis as well as angular distribution measurements of the photoelectric emission. In addition, we find that exciton-derived emission does not always dominate. Photoelectric emission properties of the in situ ''rehydrogenated'' (111)-(1x1):H diamond surface are characteristically different than emission observed from the as-polished (111)-(1x1):H surface. The rehydrogenated surface has additional downward band bending as compared to the as-polished surface. In confirmation of the assignment of photoelectric yield to exciton breakup emission, we find a significant enhancement of the total electron yield when the downward band bending of the hydrogenated surface is increased. The functional form of the observed total electron yield demonstrates that, in contrast to the as-polished surface, conduction-band electrons are a significant component of the observed photoelectric yield from the in situ hydrogenated (111)-(1x1):H surface. Furthermore, electron emission characteristics of the rehydrogenated surface confirms our assignment of a Fan phonon-cascade mechanism for thermalization of excitons

Ab initio electronic band structure study of III-VI layered semiconductors

Science.gov (United States)

Olguín, Daniel; Rubio-Ponce, Alberto; Cantarero, Andrés

2013-08-01

We present a total energy study of the electronic properties of the rhombohedral γ-InSe, hexagonal ɛ-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

Science.gov (United States)

Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

2017-09-01

We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

Multiple-band reflective polarization converter using U-shaped metamaterial

International Nuclear Information System (INIS)

Huang, Xiaojun; Yang, Dong; Yang, Helin

2014-01-01

A multiple-band metamaterial reflective polarization converter (RPC) is proposed, which is composed of the dielectric substrate sandwiched with U-shaped metallic patterns and continuous metal film. The proposed U-shaped metamaterial RPC (UMM-RPC) can convert a linearly polarized wave to its cross polarized wave at the three resonant frequencies, which also can convert the linearly polarized wave to circularly polarized wave at other three resonant frequencies. Furthermore, the proposed UMM-RPC can maintain the same conversional direction at the three resonant frequencies when incident on a circularly polarized wave. The simulated and measured results are in agreement in the entire frequency range, and the polarization conversion ratio is over 90% for both linear and circular polarizations. The surface current distributions of the UMM-RPC are discussed to look into the physical mechanism. The proposed UMM-RPC has simple geometry but more operating frequency bands compared to the previous designs and can be used in applications such as antenna radome, remote sensors, and radiometer

Multiple-band reflective polarization converter using U-shaped metamaterial

Energy Technology Data Exchange (ETDEWEB)

Huang, Xiaojun [College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Department of Physics, Kashgar Teachers College, Kashgar 844000 (China); Yang, Dong [College of Physics and Electronics Science, Hubei Normal University, Huangshi 435002 (China); Yang, Helin, E-mail: emyang@mail.ccnu.edu.cn [College of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China)

2014-03-14

A multiple-band metamaterial reflective polarization converter (RPC) is proposed, which is composed of the dielectric substrate sandwiched with U-shaped metallic patterns and continuous metal film. The proposed U-shaped metamaterial RPC (UMM-RPC) can convert a linearly polarized wave to its cross polarized wave at the three resonant frequencies, which also can convert the linearly polarized wave to circularly polarized wave at other three resonant frequencies. Furthermore, the proposed UMM-RPC can maintain the same conversional direction at the three resonant frequencies when incident on a circularly polarized wave. The simulated and measured results are in agreement in the entire frequency range, and the polarization conversion ratio is over 90% for both linear and circular polarizations. The surface current distributions of the UMM-RPC are discussed to look into the physical mechanism. The proposed UMM-RPC has simple geometry but more operating frequency bands compared to the previous designs and can be used in applications such as antenna radome, remote sensors, and radiometer.

Development of an X-Band 50 MW Multiple Beam Klystron

Science.gov (United States)

Song, Liqun; Ferguson, Patrick; Ives, R. Lawrence; Miram, George; Marsden, David; Mizuhara, Max

2003-12-01

Calabazas Creek Research, Inc. is developing an X-band 50 MW multiple beam klystron (MBK) on a DOE SBIR Phase II grant. The electrical design and preliminary mechanical design were completed on the Phase I. This MBK consists of eight discrete klystron circuits driven by eight electron beams located symmetrically on a circle with a radius of 6.3 cm. Each beam operates at 190 kV and 66 A. The eight beam electron gun is in development on a DOE SBIR Phase II grant. Each circuit consists of an input cavity, two gain cavities, three penultimate cavities, and a three cavity output circuit operating in the PI/2 mode. Ring resonators were initially proposed for the complete circuit; however, low beam — wave interaction resulted in the necessity to use discrete cavities for all eight circuits. The input cavities are coupled via hybrid waveguides to ensure constant drive power amplitude and phase. The output circuits can either be combined using compact waveguide twists driving a TE01 high power window or combined into a TM04 mode converter driving the same TE01 window. The gain and efficiency for a single circuit has been optimized using KLSC, a 2 1/2D large signal klystron code. Simulations for a single circuit predict an efficiency of 53% for a single output cavity and 55% for the three cavity output resonator. The total RF output power for this MBK is 55 MW. During the Phase II emphasis will be given to cost reduction techniques resulting in a robust — high efficient — long life high power amplifier.

Understanding band gaps of solids in generalized Kohn-Sham theory.

Science.gov (United States)

Perdew, John P; Yang, Weitao; Burke, Kieron; Yang, Zenghui; Gross, Eberhard K U; Scheffler, Matthias; Scuseria, Gustavo E; Henderson, Thomas M; Zhang, Igor Ying; Ruzsinszky, Adrienn; Peng, Haowei; Sun, Jianwei; Trushin, Egor; Görling, Andreas

2017-03-14

The fundamental energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy single-electron excitations. However, the gap in the band structure of the exact multiplicative Kohn-Sham (KS) potential substantially underestimates the fundamental gap, a major limitation of KS density-functional theory. Here, we give a simple proof of a theorem: In generalized KS theory (GKS), the band gap of an extended system equals the fundamental gap for the approximate functional if the GKS potential operator is continuous and the density change is delocalized when an electron or hole is added. Our theorem explains how GKS band gaps from metageneralized gradient approximations (meta-GGAs) and hybrid functionals can be more realistic than those from GGAs or even from the exact KS potential. The theorem also follows from earlier work. The band edges in the GKS one-electron spectrum are also related to measurable energies. A linear chain of hydrogen molecules, solid aluminum arsenide, and solid argon provide numerical illustrations.

Statistical analysis of the electronic crosstalk correction in Terra MODIS Band 27

Science.gov (United States)

Madhavan, Sriharsha; Sun, Junqiang; Xiong, Xiaoxiong; Wenny, Brian N.; Wu, Aisheng

2014-10-01

The first MODerate-resolution Imaging Spectroradiometer (MODIS), also known as the Proto-Flight model (PFM), is on-board the Terra spacecraft and has completed 14 years of on orbit flight as of December 18, 2013. MODIS remotely senses the Earth in 36 spectral bands, with a wavelength range from 0.4 μm to 14.4 μm. The 36 bands can be subdivided into two groups based on their spectral responsivity as Reflective Solar Bands (RSBs) and Thermal Emissive Bands (TEBs). Band 27 centered at 6.77 μm is a TEB used to study the global water vapor distribution. It was found recently that this band has been severely affected by electronic crosstalk. The electronic crosstalk magnitude, its on-orbit change and calibration impact have been well characterized in our previous studies through the use of regularly scheduled lunar observations. Further, the crosstalk correction was implemented in Earth view (EV) images and quantified the improvements of the same. However, improvements remained desirable on several fronts. Firstly, the effectiveness of the correction needed to be analyzed spatially and radiometrically over a number of scenes. Also, the temporal aspect of the correction had to be investigated in a rigorous manner. In order to address these issues, a one-orbit analysis was performed on the Level 1A (L1A) scene granules over a ten year period from 2003 through 2012. Results have been quantified statistically and show a significant reduction of image striping, as well as removal of leaked signal features from the neighboring bands. Statistical analysis was performed by analyzing histograms of the one-orbit granules at a scene and detector level before and after correction. The comprehensive analysis and results reported in this paper will be very helpful to the scientific community in understanding the impacts of crosstalk correction on various scenes and could potentially be applied for future improvements of band 27 calibration and, therefore, its retrieval for the

Band rejection filter for measurement of electron cyclotron emission during electron cyclotron heating

International Nuclear Information System (INIS)

Iwase, Makoto; Ohkubo, Kunizo; Kubo, Shin; Idei, Hiroshi.

1996-05-01

For the measurement of electron cyclotron emission from the high temperature plasma, a band rejection filter in the range of 40-60 GHz is designed to reject the 53.2 GHz signal with large amplitude from the gyrotron for the purpose of plasma electron heating. The filter developed with ten sets of three quarters-wavelength coupled by TE 111 mode of tunable resonant cavity has rejection of 50 dB and 3 dB bandwidth of 500 MHz. The modified model of Tschebysheff type for the prediction of rejection is proposed. It is confirmed that the measured rejection as a function of frequency agrees well with the experimental results for small coupling hole, and also clarified that the rejection ratio increases for the large coupling hole. (author)

The Electronic Band Structure of Platinum Oxide (PtO) | Omehe ...

African Journals Online (AJOL)

We have performed the electronic band structure of the bulk and monolayer of PtO using the full potential linear muffin-tin orbital and the projector augmented wave method with the density functional theory. We applied the LDA and LDA+U scheme to both methods. It was found out that the LDA calculation of bulk PtO ...

Lanthanide 4f-electron binding energies and the nephelauxetic effect in wide band gap compounds

International Nuclear Information System (INIS)

Dorenbos, Pieter

2013-01-01

Employing data from luminescence spectroscopy, the inter 4f-electron Coulomb repulsion energy U(6, A) in Eu 2+/3+ impurities together with the 5d-centroid energy shift ϵ c (1,3+,A) in Ce 3+ impurities in 40 different fluoride, chloride, bromide, iodide, oxide, sulfide, and nitride compounds has been determined. This work demonstrates that the chemical environment A affects the two energies in a similar fashion; a fashion that follows the anion nephelauxetic sequence F, O, Cl, Br, N, I, S, Se. One may then calculate U(6, A) from well established and accurate ϵ c (1,3+,A) values which are then used as input to the chemical shift model proposed in Dorenbos (2012) [19]. As output it provides the chemical shift of 4f-electron binding energy and therewith the 4f-electron binding energy relative to the vacuum energy. In addition this method provides a tool to routinely establish the binding energy of electrons at the top of the valence band (work function) and the bottom of the conduction band (electron affinity) throughout the entire family of inorganic compounds. How the electronic structure of the compound and lanthanide impurities therein change with type of compound and type of lanthanide is demonstrated. -- Highlights: ► A relationship between 5d centroid shift and 4f-electron Coulomb repulsion energy is established. ► Information on the absolute 4f-electron binding energy of lanthanides in 40 compounds is provided. ► A new tool to determine absolute binding energies of electrons in valence and conduction bands is demonstrated

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

Experimental Study of Electronic Quantum Interference, Photonic Crystal Cavity, Photonic Band Edge Effects for Optical Amplification

Science.gov (United States)

2016-01-26

AFRL-RV-PS- AFRL-RV-PS- TR-2016-0003 TR-2016-0003 EXPERIMENTAL STUDY OF ELECTRONIC QUANTUM INTERFERENCE , PHOTONIC CRYSTAL CAVITY, PHOTONIC BAND...EDGE EFFECTS FOR OPTICAL AMPLIFICATION Shawn-Yu Lin Rensselaer Polytechnic Institute 110 8th Street Troy, New York 12180 26 Jan 2016 Final Report...2014 – 11 Jan 2016 4. TITLE AND SUBTITLE Experimental Study of Electronic Quantum Interference , Photonic Crystal Cavity, Photonic Band Edge Effects

Electronic structures and valence band splittings of transition metals doped GaNs

International Nuclear Information System (INIS)

Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

2007-01-01

For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

Band resolution of optical spectra of solvated electrons in water, alcohols, and tetrahydrofuran

International Nuclear Information System (INIS)

Jou, F.-Y.; Freeman, G.R.

1979-01-01

The optical absorption spectra of solvated electrons in water, alcohols, and tetrahydrofuran are empirically resolved into two Gaussian bands and a continuum tail. The first Gaussian band covers most of the low energy side of the spectrum. The second Gaussian band lies at an energy slightly above that of the absorption maximum of the total spectrum. With the exception of tert-butyl alcohol, in water and alcohols the following were observed: (a) the first Gaussian bands have the same half-width, but the oscillator strength in water is about double that in an alcohol; (b) the second Gaussian bands have similar half-widths and oscillator strengths; (c) the continuum tails have similar half-widths, yet that in water possesses only about one third as much oscillator strength as the one in alcohol. In tert-butyl alcohol and tetrahydrofuran the first Gaussian band and the continuum tail each carry nearly half of the total oscillator strength. (author)

Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave Particle Interactions

Science.gov (United States)

Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

2016-01-01

Electron pitch angle (D (alpha)) and momentum (D(pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L = 4.6 and 6.8 for electron energies 10 keV. Landau (n = 0) resonance and cyclotron harmonic resonances n = +/-1, +/-2,...+/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n = +1 and n = +2. A major contribution to momentum diffusion coefficients appears from n = +2. However, the banded structures in D alpha and Dpp coefficients appear only in the profile of diffusion coefficients for n = +2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The Dpp diffusion coefficient for ECH waves is one to two orders smaller than D alpha coefficients. For chorus waves, Dpp coefficients are about an order of magnitude smaller than D alpha coefficients for the case n does not = 0. In case of Landau resonance, the values of Dpp coefficient are generally larger than the values of D alpha coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances n = +1, +2, and +3, whereas for whistler mode waves, the frequencies have been calculated for angle

Electrostatic noise bands associated with the electron gyrofrequency and plasma frequency in the outer magnetosphere

International Nuclear Information System (INIS)

Shaw, R.R.

1975-01-01

Naturally occurring noise bands near the electron plasma frequency are frequently detected by the University of Iowa plasma wave experiment on the IMP 6 satellite in the region from just inside the plasmapause to radial distances of about 10 earth radii in the outer magnetosphere. The electric field strength of these noise bands is usually small with electric field spectral densities near 10 -15 volts 2 meter -2 Hz -1 . A wave magnetic field has been detected only in a few unusually intense cases, and in these cases the magnetic field energy density is several orders of magnitude smaller than the electric field energy density. The bands are observed at all magnetic latitudes covered by the IMP 6 orbit (parallelγ/sub m/parallel less than or equal to 45 0 ) and appear to be a permanent feature of the outer magnetosphere. They are found at all local times and occur least frequently in the quadrant from 18 to 24 hours. The bands appear to consist of two distinct spectral types, diffuse and narrow. In both types the center frequency of the noise band is bounded by consecutive harmonics of the electron gyrofrequency, and the bands occur most often between harmonics that are near the local electron plasma frequency. These bands appear to merge continuously into two types of plasma wave emissions that are found in dissimilar regions of the magnetosphere (upper hybrid resonance noise, also called Region 3 noise, inside the plasmasphere and (n + 1/2)f/sub g/ harmonics in the outer magnetosphere). It is suggested that this smooth merging is caused by changes in the plasma wave dispersion relation that occur as the spacecraft moves from the cold plasma within the plasmasphere into the warm non-Maxwellian plasma found in the outer magnetosphere

Electron-electron interaction in Multiple Quantum Wells

Science.gov (United States)

Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

2012-07-01

The complex investigation of the magneto-transport effects in structures containing multiple quantum well (MQWs) based on the GaAs/AlGaAs-heterostructures has been performed. The MQWs investigated have different electron densities in QWs. The parameters of 2DEG in MQWs were determined from the data of the Integer Quantum Hall Effect (IQHE) and Shubnikov-de Haas oscillations (SdH) observed at low temperatures (0.6-4.2 K). The method of calculation of the electron states energies in MQWs has been developed which is based on the splitting of these states due to the exchange interaction (SAS-splitting, see D. Płoch et al., Phys. Rev. B 79 (2009) 195434) including the screening of this interaction. The IQHE and SdH observed in these multilayer structures with the third degree of freedom for electrons are interpreted from this.

Polydactylous Transverse Erythronychia: Report of a Patient with Multiple Horizontal Red Bands Affecting the Fingernails.

Science.gov (United States)

Chang, Carina; Beutler, Bryce D; Cohen, Philip R

2017-06-01

Redness of the nail plate-erythronychia-is a common condition involving one or multiple digits. It may affect the entire nail or present as longitudinal red bands that extend from the proximal nail fold to the distal tip of the nail plate. Rarely, red bands may traverse the nail bed horizontally. Although erythronychia is often idiopathic, it has also been associated with amyloidosis, Darier's disease, lichen planus, and various other cutaneous conditions. We describe the clinical features of a 64-year-old Caucasian man who presented with transverse and longitudinal erythronychia affecting his fingernails. In addition, we review the classification of erythronychia and summarize the acute and chronic conditions that have been associated with this clinical finding. The features of a man with polydactylous transverse and longitudinal erythronychia are presented. In addition, PubMed was used to search the following terms: erythronychia, longitudinal erythronychia, red lunulae, and subungual. All papers were reviewed, and relevant articles, along with their references, were evaluated. Informed consent was obtained from the patient for being included in the study. A 64-year-old Caucasian man with a past medical history significant for testicular cancer and pulmonary embolism presented with multiple horizontal pink-red bands affecting his fingernails. The discoloration was most prominent in the region distal to the lunula. In addition, the nails of the fifth digit of his left hand and third digit of his right hand featured longitudinal red bands extending from the distal curvature of the lunula to the free edge of the nail plate. A diagnosis of polydactylous longitudinal and transverse erythronychia, based on the clinical presentation, was established. Our patient's red bands were asymptomatic and he was not concerned about the cosmetic appearance of his nails; therefore, no additional investigation or treatment was required. Polydactylous transverse erythronychia is a

Indication for a K/sup π/ = 0- octupole band in 150Nd from electron scattering

International Nuclear Information System (INIS)

Creswell, C.; Hirsch, A.; Bertozzi, W.; Heisenberg, J.; Kowalski, S.; Sargent, C.P.; Turchinetz, W.; Dieperink, A.

1978-01-01

Recent electron scattering results on the 0.850 MeV level of 150 Nd, when analyzed in terms of the interacting boson model, are inconsistent with the interpretation of this level as a pure J/sup π/(K) = 2 + (0) state. Very recent (n,n'γ) work has shown this level to be a 1 - , 2 + doublet. Assuming this level to be the band head of a ''K/sup π/ = 0 - '' octupole band, a simple model is used to predict electron scattering form factors for the 0.850 MeV state and a 3 - octupole level observed at 0.931 MeV. Comparison is made between these predicted form factors and recent electron scattering data

Ka-band Technologies for Small Spacecraft Communications via Relays and Direct Data Downlink

Science.gov (United States)

Budinger, James M.; Niederhaus, Charles; Reinhart, Richard; Downey, Joe; Roberts, Anthony

2016-01-01

As the scientific capabilities and number of small spacecraft missions in the near Earth region increase, standard yet configurable user spacecraft terminals operating in Ka-band are needed to lower mission cost and risk and enable significantly higher data return than current UHF or S-band terminals. These compact Ka-band terminals are intended to operate with both the current and next generation of Ka-band relay satellites and via direct data communications with near Earth tracking terminals. This presentation provides an overview of emerging NASA-sponsored and commercially provided technologies in software defined radios (SDRs), transceivers, and electronically steered antennas that will enable data rates from hundreds of kbps to over 1 Gbps and operate in multiple frequency bands (such as S- and X-bands) and expand the use of NASA's common Ka-bands frequencies: 22.55-23.15 GHz for forward data or uplink; and 25.5-27.0 GHz for return data or downlink. Reductions in mass, power and volume come from integration of multiple radio functions, operations in Ka-band, high efficiency amplifiers and receivers, and compact, flat and vibration free electronically steered narrow beam antennas for up to + 60 degrees field of regard. The software defined near Earth space transceiver (SD-NEST) described in the presentation is intended to be compliant with NASA's space telecommunications radio system (STRS) standard for communications waveforms and hardware interoperability.

A multi-band, multi-level, multi-electron model for efficient FDTD simulations of electromagnetic interactions with semiconductor quantum wells

Science.gov (United States)

Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

2015-08-01

We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite-difference time-domain method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multi-band) with a small number of discrete multi-electron states (multi-level, multi-electron). This enables accurate and efficient two-dimensional (2-D) and three-dimensional (3-D) simulations of nanophotonic devices with SQW active media. The model includes the following features: (1) Optically induced interband transitions between various SQW conduction and heavy-hole or light-hole sub-bands are considered. (2) Novel intra sub-band and inter sub-band transition terms are derived to thermalize the electron and hole occupational distributions to the correct Fermi-Dirac distributions. (3) The terms in (2) result in an explicit update scheme which circumvents numerically cumbersome iterative procedures. This significantly augments computational efficiency. (4) Explicit update terms to account for carrier leakage to unconfined states are derived, which thermalize the bulk and SQW populations to a common quasi-equilibrium Fermi-Dirac distribution. (5) Auger recombination and intervalence band absorption are included. The model is validated by comparisons to analytic band-filling calculations, simulations of SQW optical gain spectra, and photonic crystal lasers.

Multiple band structure in 156Er

International Nuclear Information System (INIS)

Sunyar, A.W.; Der Mateosian, E.; Kistner, O.C.; Johnson, A.; Lumpkin, A.H.; Thieberger, P.

1976-01-01

The 142 Nd( 18 O,4n) 156 Er reaction at 90-95 MeV was used to study 156 Er high-spin states to spin 24. In addition to the background ground-state band, two well developed off-spin side bands, one of each parity, were observed. (Auth.)

Photoconductivities from band states and a dissipative electron dynamics: Si(111) without and with adsorbed Ag clusters

International Nuclear Information System (INIS)

Vazhappilly, Tijo; Hembree, Robert H.; Micha, David A.

2016-01-01

A new general computational procedure is presented to obtain photoconductivities starting from atomic structures, combining ab initio electronic energy band states with populations from density matrix theory, and implemented for a specific set of materials based on Si crystalline slabs and their nanostructured surfaces without and with adsorbed Ag clusters. The procedure accounts for charge mobility in semiconductors in photoexcited states, and specifically electron and hole photomobilities at Si(111) surfaces with and without adsorbed Ag clusters using ab initio energy bands and orbitals generated from a generalized gradient functional, however with excited energy levels modified to provide correct bandgaps. Photoexcited state populations for each band and carrier type were generated using steady state solution of a reduced density matrix which includes dissipative medium effects. The present calculations provide photoexcited electronic populations and photoinduced mobilities resulting from applied electric fields and obtained from the change of driven electron energies with their electronic momentum. Extensive results for Si slabs with 8 layers, without and with adsorbed Ag clusters, show that the metal adsorbates lead to substantial increases in the photomobility and photoconductivity of electrons and holes

High gain harmonic generation free electron lasers enhanced by pseudoenergy bands

Directory of Open Access Journals (Sweden)

Takashi Tanaka

2017-08-01

Full Text Available We propose a new scheme for high gain harmonic generation free electron lasers (HGHG FELs, which is seeded by a pair of intersecting laser beams to interact with an electron beam in a modulator undulator located in a dispersive section. The interference of the laser beams gives rise to a two-dimensional modulation in the energy-time phase space because of a strong correlation between the electron energy and the position in the direction of dispersion. This eventually forms pseudoenergy bands in the electron beam, which result in efficient harmonic generation in HGHG FELs in a similar manner to the well-known scheme using the echo effects. The advantage of the proposed scheme is that the beam quality is less deteriorated than in other existing schemes.

Electron Raman scattering in asymmetrical multiple quantum wells

International Nuclear Information System (INIS)

Betancourt-Riera, R; Rosas, R; Marin-Enriquez, I; Riera, R; Marin, J L

2005-01-01

Optical properties of asymmetrical multiple quantum wells for the construction of quantum cascade lasers are calculated, and expressions for the electronic states of asymmetrical multiple quantum wells are presented. The gain and differential cross-section for an electron Raman scattering process are obtained. Also, the emission spectra for several scattering configurations are discussed, and the corresponding selection rules for the processes involved are studied; an interpretation of the singularities found in the spectra is given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers

A Multiple-Channel Sub-Band Transient Detection System

Energy Technology Data Exchange (ETDEWEB)

David A. Smith

1998-11-01

We have developed a unique multiple-channel sub-band transient detection system to record transient electromagnetic signals in carrier-dominated radio environments; the system has been used to make unique observations of weak, transient HF signals. The detection system has made these observations possible through improved sensitivity compared to conventional broadband transient detection systems; the sensitivity improvement is estimated to be at least 20 dB. The increase in sensitivity has been achieved through subdivision of the band of interest (an 18 MHz tunable bandwidth) into eight sub-band independent detection channels, each with a 400 kHz bandwidth and its own criteria. The system generates a system trigger signal when a predetermined number of channels (typically five) trigger within a predetermined window of time (typically 100 ~s). Events are recorded with a broadband data acquisition system sampling at 50 or 100 Msample/s, so despite the fact that the detection system operates on portions of the signal confined to narrow bands, data acquisition is broadband. Between May and September of 1994, the system was used to detect and record over six thousand transient events in the frequency band from 3 to 30 MHz. Approximately 500 of the events have been characterized as paired bursts of radio noise with individual durations of 2 to 10 ps and separations between the bursts of 5 to 160 ps. The paired transients are typically 5 to 40 dB brighter than the background electromagnetic spectrum between carrier signals. We have termed these events SubIonospheric Pulse Pairs (SIPPS) and presently have no explanation as to their source. Our observations of SIPPS resemble observations of TransIonospheric Pulse Pairs (TIPPs) recorded by the Blackboard instrument on the ALEXIS satellite; the source of TIPP events is also unknown. Most of the recorded SIPP events do not exhibit frequency dispersion, implying propagation along a line-of-sight (groundwave) path; but seven of

Joint density of states of wide-band-gap materials by electron energy loss spectroscopy

International Nuclear Information System (INIS)

Fan, X.D.; Peng, J.L.; Bursill, L.A.

1998-01-01

Kramers-Kronig analysis for parallel electron energy loss spectroscopy (PEELS) data is developed as a software package. When used with a JEOL 4000EX high-resolution transmission electron microscope (HRTEM) operating at 100 keV this allows us to obtain the dielectric function of relatively wide band gap materials with an energy resolution of approx 1.4 eV. The imaginary part of the dielectric function allows the magnitude of the band gap to be determined as well as the joint-density-of-states function. Routines for obtaining three variations of the joint-density of states function, which may be used to predict the optical and dielectric response for angle-resolved or angle-integration scattering geometries are also described. Applications are presented for diamond, aluminum nitride (AlN), quartz (SiO 2 ) and sapphire (Al 2 O 3 ). The results are compared with values of the band gap and density of states results for these materials obtained with other techniques. (authors)

Banded Structures in Electron Pitch Angle Diffusion Coefficients from Resonant Wave-Particle Interactions

Science.gov (United States)

Tripathi, A. K.; Singhal, R. P.; Khazanov, G. V.; Avanov, L. A.

2016-01-01

Electron pitch angle (D(sub (alpha alpha))) and momentum (D(sub pp)) diffusion coefficients have been calculated due to resonant interactions with electrostatic electron cyclotron harmonic (ECH) and whistler mode chorus waves. Calculations have been performed at two spatial locations L=4.6 and 6.8 for electron energies less than or equal to 10 keV. Landau (n=0) resonance and cyclotron harmonic resonances n= +/- 1, +/-2, ... +/-5 have been included in the calculations. It is found that diffusion coefficient versus pitch angle (alpha) profiles show large dips and oscillations or banded structures. The structures are more pronounced for ECH and lower band chorus (LBC) and particularly at location 4.6. Calculations of diffusion coefficients have also been performed for individual resonances. It is noticed that the main contribution of ECH waves in pitch angle diffusion coefficient is due to resonances n=+1 and n=+2. A major contribution to momentum diffusion coefficients appears from n=+2. However, the banded structures in D(sub alpha alpha) and D(sub pp) coefficients appear only in the profile of diffusion coefficients for n=+2. The contribution of other resonances to diffusion coefficients is found to be, in general, quite small or even negligible. For LBC and upper band chorus waves, the banded structures appear only in Landau resonance. The D(sub pp) diffusion coefficient for ECH waves is one to two orders smaller than D(sub alpha alpha) coefficients. For chorus waves, D(sub pp) coefficients are about an order of magnitude smaller than D(sub alpha alpha) coefficients for the case n does not equal 0. In case of Landau resonance, the values of D(sub pp) coefficient are generally larger than the values of D(sub alpha alpha) coefficients particularly at lower energies. As an aid to the interpretation of results, we have also determined the resonant frequencies. For ECH waves, resonant frequencies have been estimated for wave normal angle 89 deg and harmonic resonances

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Directory of Open Access Journals (Sweden)

Sung Heo

2015-07-01

Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

Electronic band structure, optical, dynamical and thermodynamic properties of cesium chloride (CsCl from first-principles

Directory of Open Access Journals (Sweden)

Bingol Suat

2015-01-01

Full Text Available The geometric structural optimization, electronic band structure, total density of states for valence electrons, density of states for phonons, optical, dynamical, and thermodynamical features of cesium chloride have been investigated by linearized augmented plane wave method using the density functional theory under the generalized gradient approximation. Ground state properties of cesium chloride are studied. The calculated ground state properties are consistent with experimental results. Calculated band structure indicates that the cesium chloride structure has an indirect band gap value of 5.46 eV and is an insulator. From the obtained phonon spectra, the cesium chloride structure is dynamically stable along the various directions in the Brillouin zone. Temperature dependent thermodynamic properties are studied using the harmonic approximation model.

Jumping magneto-electric states of electrons in semiconductor multiple quantum wells

International Nuclear Information System (INIS)

Pfeffer, Pawel; Zawadzki, Wlodek

2011-01-01

Orbital and spin electron states in semiconductor multiple quantum wells in the presence of an external magnetic field transverse to the growth direction are considered. Rectangular wells of GaAs/GaAlAs and InAs/AlSb are taken as examples. It is shown that, in addition to magneto-electric states known from one-well systems, there appear magneto-electric states having a much stronger dependence of energies on a magnetic field and exhibiting an interesting anti-crossing behavior. The origin of these states is investigated and it is shown that the strong field dependence of the energies is related to an unusual 'jumping' behavior of their wavefunctions between quantum wells as the field increases. The ways of investigating the jumping states by means of interband magneto-luminescence transitions or intraband cyclotron-like transitions are considered and it is demonstrated that the jumping states can be observed. The spin g factors of electrons in the jumping states are calculated using the real values of the spin–orbit interaction and bands' nonparabolicity for the semiconductors in question. It is demonstrated that the jumping states offer a wide variety of the spin g factors

Valence band electronic structure of Pd based ternary chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

2016-12-15

Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

Band-structure-based collisional model for electronic excitations in ion-surface collisions

International Nuclear Information System (INIS)

Faraggi, M.N.; Gravielle, M.S.; Alducin, M.; Silkin, V.M.; Juaristi, J.I.

2005-01-01

Energy loss per unit path in grazing collisions with metal surfaces is studied by using the collisional and dielectric formalisms. Within both theories we make use of the band-structure-based (BSB) model to represent the surface interaction. The BSB approach is based on a model potential and provides a precise description of the one-electron states and the surface-induced potential. The method is applied to evaluate the energy lost by 100 keV protons impinging on aluminum surfaces at glancing angles. We found that when the realistic BSB description of the surface is used, the energy loss obtained from the collisional formalism agrees with the dielectric one, which includes not only binary but also plasmon excitations. The distance-dependent stopping power derived from the BSB model is in good agreement with available experimental data. We have also investigated the influence of the surface band structure in collisions with the Al(100) surface. Surface-state contributions to the energy loss and electron emission probability are analyzed

Structural analysis, electronic properties, and band gaps of a graphene nanoribbon: A new 2D materials

Science.gov (United States)

Dass, Devi

2018-03-01

Graphene nanoribbon (GNR), a new 2D carbon nanomaterial, has some unique features and special properties that offer a great potential for interconnect, nanoelectronic devices, optoelectronics, and nanophotonics. This paper reports the structural analysis, electronic properties, and band gaps of a GNR considering different chirality combinations obtained using the pz orbital tight binding model. In structural analysis, the analytical expressions for GNRs have been developed and verified using the simulation for the first time. It has been found that the total number of unit cells and carbon atoms within an overall unit cell and molecular structure of a GNR have been changed with the change in their chirality values which are similar to the values calculated using the developed analytical expressions thus validating both the simulation as well as analytical results. Further, the electronic band structures at different chirality values have been shown for the identification of metallic and semiconductor properties of a GNR. It has been concluded that all zigzag edge GNRs are metallic with very small band gaps range whereas all armchair GNRs show both the metallic and semiconductor nature with very small and high band gaps range. Again, the total number of subbands in each electronic band structure is equal to the total number of carbon atoms present in overall unit cell of the corresponding GNR. The semiconductors GNRs can be used as a channel material in field effect transistor suitable for advanced CMOS technology whereas the metallic GNRs could be used for interconnect.

Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy

Science.gov (United States)

Thiel, Charles Warren

There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence

Photon-mediated electron multiplication in liquid xenon doped with trimethylamine

International Nuclear Information System (INIS)

Sano, Toshio; Ashikaga, Kinya; Doke, Tadayoshi; Hitachi, Akira; Kikuchi, Jun; Masuda, Kimiaki; Okumura, Yasuaki

1989-01-01

Electron multiplication mediated by photons has been observed in liquid xenon doped with trimethylamine in concentrations of 0, 9.3, 43, 118 and 400 ppm. The effect was observed by irradiating a single wire counter with 1 MeV electrons and gamma rays from 207 Bi sources. The multiplication factor was observed to increase from a value of 23 at a concentration of 9.3 ppm to a value of 45 at a concentration of 118 ppm. Over the same range of concentrations, the threshold anode voltage for photon-mediated electron multiplication (PMEM) decreased from 2.5 to 1.4 kV and the PMEM results in a deterioration of energy resolution. At a concentration of 400 ppm, the resulting electron multiplication was neither stable nor reproducible. (orig.)

A class of monolayer metal halogenides MX{sub 2}: Electronic structures and band alignments

Energy Technology Data Exchange (ETDEWEB)

Lu, Feng; Wang, Weichao; Luo, Xiaoguang; Cheng, Yahui; Dong, Hong; Liu, Hui; Wang, Wei-Hua, E-mail: whwangnk@nankai.edu.cn [Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071 (China); Xie, Xinjian [School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

2016-03-28

With systematic first principles calculations, a class of monolayer metal halogenides MX{sub 2} (M = Mg, Ca, Zn, Cd, Ge, Pb; M = Cl, Br, I) has been proposed. Our study indicates that these monolayer materials are semiconductors with the band gaps ranging from 2.03 eV of ZnI{sub 2} to 6.08 eV of MgCl{sub 2}. Overall, the band gap increases with the increase of the electronegativity of the X atom or the atomic number of the metal M. Meanwhile, the band gaps of monolayer MgX{sub 2} (X = Cl, Br) are direct while those of other monolayers are indirect. Based on the band edge curvatures, the derived electron (m{sub e}) and hole (m{sub h}) effective masses of MX{sub 2} monolayers are close to their corresponding bulk values except that the m{sub e} of CdI{sub 2} is three times larger and the m{sub h} for PbI{sub 2} is twice larger. Finally, the band alignments of all the studied MX{sub 2} monolayers are provided using the vacuum level as energy reference. These theoretical results may not only introduce the monolayer metal halogenides family MX{sub 2} into the emerging two-dimensional materials, but also provide insights into the applications of MX{sub 2} in future electronic, visible and ultraviolet optoelectronic devices.

Inter-spin distance determination using L-band (1-2 GHz) non-adiabatic rapid sweep electron paramagnetic resonance (NARS EPR)

Science.gov (United States)

Kittell, Aaron W.; Hustedt, Eric J.; Hyde, James S.

2014-01-01

Site-directed spin-labeling electron paramagnetic resonance (SDSL EPR) provides insight into the local structure and motion of a spin probe strategically attached to a molecule. When a second spin is introduced to the system, macromolecular information can be obtained through measurement of inter-spin distances either by continuous wave (CW) or pulsed electron double resonance (ELDOR) techniques. If both methodologies are considered, inter-spin distances of 8 to 80 Å can be experimentally determined. However, there exists a region at the upper limit of the conventional X-band (9.5 GHz) CW technique and the lower limit of the four-pulse double electron-electron resonance (DEER) experiment where neither method is particularly reliable. The work presented here utilizes L-band (1.9 GHz) in combination with non-adiabatic rapid sweep (NARS) EPR to address this opportunity by increasing the upper limit of the CW technique. Because L-band linewidths are three to seven times narrower than those at X-band, dipolar broadenings that are small relative to the X-band inhomogeneous linewidth become observable, but the signal loss due to the frequency dependence of the Boltzmann factor, has made L-band especially challenging. NARS has been shown to increase sensitivity by a factor of five, and overcomes much of this loss, making L-band distance determination more feasible [1]. Two different systems are presented and distances of 18–30 Å have been experimentally determined at physiologically relevant temperatures. Measurements are in excellent agreement with a helical model and values determined by DEER. PMID:22750251

Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhi-Gang [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou (China); Heinke, Lars, E-mail: Lars.Heinke@KIT.edu; Wöll, Christof [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin [Institute of Nanotechnology (INT), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Gordan, Ovidiu D.; Zahn, Dietrich R. T. [Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz (Germany)

2015-11-02

The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.

Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

Science.gov (United States)

Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

2015-11-01

The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly "simple" MOF, the excitation spectra cannot be explained by a superposition of "intra-unit" excitations within the individual building blocks. Instead, "inter-unit" excitations also have to be considered.

Experimental and theoretical investigations of the electronic band structure of metal-organic frameworks of HKUST-1 type

International Nuclear Information System (INIS)

Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.

2015-01-01

The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered

Valence band electronic structure and band alignment of LaAlO{sub 3}/SrTiO{sub 3}(111) heterointerfaces

Energy Technology Data Exchange (ETDEWEB)

Gabel, J.; Scheiderer, P.; Zapf, M.; Schuetz, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, C.; Lee, T.L. [Diamond Light Source, Didcot (United Kingdom)

2015-07-01

As in the famous LaAlO{sub 3}(LAO)/SrTiO{sub 3}(STO) (001) a two-dimensional electron system (2DES) also forms at the interface between LAO and STO in (111) orientation. A distinct feature of the (111) interface is its peculiar real space topology. Each bilayer represents a buckled honeycomb lattice similar to graphene which is known theoretically to host various topologically non-trivial states. Bilayer STO in proximity to the interface can be regarded as a three-orbital generalization of graphene with enhanced electron correlations making it a promising candidate for the realization of strongly correlated topological phases. We have investigated the electronic structure of the LAO/STO (111) heterostructure in relation to the oxygen vacancy concentration which we can control by synchrotron light irradiation and oxygen dosing. With hard X-ray photoemission we study the core levels, whereas resonant soft X-ray photoemission is used to probe the interfacial valence band (VB) states. Two VB features are found: a peak at the Fermi level associated with the 2DES and in-gap states at higher binding energies attributed to oxygen vacancies. By varying the oxygen vacancy contribution we can tune the emergence of the VB states and engineer the interfacial band alignment.

Statistics of electron multiplication in multiplier phototube: iterative method

International Nuclear Information System (INIS)

Grau Malonda, A.; Ortiz Sanchez, J.F.

1985-01-01

An iterative method is applied to study the variation of dynode response in the multiplier phototube. Three different situations are considered that correspond to the following ways of electronic incidence on the first dynode: incidence of exactly one electron, incidence of exactly r electrons and incidence of an average anti-r electrons. The responses are given for a number of steps between 1 and 5, and for values of the multiplication factor of 2.1, 2.5, 3 and 5. We study also the variance, the skewness and the excess of jurtosis for different multiplication factors. (author)

Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

International Nuclear Information System (INIS)

OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

1997-01-01

We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

Multiple electron capture in close ion-atom collisions

International Nuclear Information System (INIS)

Schlachter, A.S.

1987-10-01

Multiple electron capture is reported for Ca 17+ in Ar. Close collisions are defined by the observation of a coincident Ca K or Ar K x-ray. A large number of electrons is transferred to the projectile in a single close collision when the Ca ion projectile is of the order of the Ar L-shell electron velocity. The cross section for electron capture is reported

Automated Registration of Images from Multiple Bands of Resourcesat-2 Liss-4 camera

Science.gov (United States)

Radhadevi, P. V.; Solanki, S. S.; Jyothi, M. V.; Varadan, G.

2014-11-01

Continuous and automated co-registration and geo-tagging of images from multiple bands of Liss-4 camera is one of the interesting challenges of Resourcesat-2 data processing. Three arrays of the Liss-4 camera are physically separated in the focal plane in alongtrack direction. Thus, same line on the ground will be imaged by extreme bands with a time interval of as much as 2.1 seconds. During this time, the satellite would have covered a distance of about 14 km on the ground and the earth would have rotated through an angle of 30". A yaw steering is done to compensate the earth rotation effects, thus ensuring a first level registration between the bands. But this will not do a perfect co-registration because of the attitude fluctuations, satellite movement, terrain topography, PSM steering and small variations in the angular placement of the CCD lines (from the pre-launch values) in the focal plane. This paper describes an algorithm based on the viewing geometry of the satellite to do an automatic band to band registration of Liss-4 MX image of Resourcesat-2 in Level 1A. The algorithm is using the principles of photogrammetric collinearity equations. The model employs an orbit trajectory and attitude fitting with polynomials. Then, a direct geo-referencing with a global DEM with which every pixel in the middle band is mapped to a particular position on the surface of the earth with the given attitude. Attitude is estimated by interpolating measurement data obtained from star sensors and gyros, which are sampled at low frequency. When the sampling rate of attitude information is low compared to the frequency of jitter or micro-vibration, images processed by geometric correction suffer from distortion. Therefore, a set of conjugate points are identified between the bands to perform a relative attitude error estimation and correction which will ensure the internal accuracy and co-registration of bands. Accurate calculation of the exterior orientation parameters with

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

Science.gov (United States)

Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

2015-11-13

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

Computed a multiple band metamaterial absorber and its application based on the figure of merit value

Science.gov (United States)

Chen, Chao; Sheng, Yuping; Jun, Wang

2018-01-01

A high performed multiple band metamaterial absorber is designed and computed through the software Ansofts HFSS 10.0, which is constituted with two kinds of separated metal particles sub-structures. The multiple band absorption property of the metamaterial absorber is based on the resonance of localized surface plasmon (LSP) modes excited near edges of metal particles. The damping constant of gold layer is optimized to obtain a near-perfect absorption rate. Four kinds of dielectric layers is computed to achieve the perfect absorption perform. The perfect absorption perform of the metamaterial absorber is enhanced through optimizing the structural parameters (R = 75 nm, w = 80 nm). Moreover, a perfect absorption band is achieved because of the plasmonic hybridization phenomenon between LSP modes. The designed metamaterial absorber shows high sensitive in the changed of the refractive index of the liquid. A liquid refractive index sensor strategy is proposed based on the computed figure of merit (FOM) value of the metamaterial absorber. High FOM values (116, 111, and 108) are achieved with three liquid (Methanol, Carbon tetrachloride, and Carbon disulfide).

BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

Directory of Open Access Journals (Sweden)

Hee Jae Kang2

2011-11-01

Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

Theoretical study of electronic absorption spectroscopy of propadienylidene molecule vis-â-vis the observed diffuse interstellar bands

International Nuclear Information System (INIS)

Reddy, Samala Nagaprasad; Mahapatra, S.

2012-01-01

Highlights: ► Theoretical study of spectroscopy and dynamics of electronically excited l-C 3 H 2 . ► Construction of ab initio electronic potential energy and diabatic coupling surfaces. ► First principles study of nuclear dynamics on excited electronic states. ► Findings reveal l-C 3 H 2 is a potential molecular carrier of diffuse interstellar bands. ► Electronically excited l-C 3 H 2 decays by ultrafast nonradiative internal conversion. -- Abstract: Observation of broad and diffuse interstellar bands (DIBs) at 4881 Å and 5440 Å assigned to the optical absorption spectrum of Y-shaped propadienylidene (H 2 C=C=C:) molecule is theoretically examined in this paper. This molecule apparently absorbs in the same wavelength region as the observed DIBs and was suggested to be a potential carrier of these DIBs. This assignment mostly relied on the experimental data from radioastronomy and laboratory measurements. Motivated by these available experimental data we attempt here a theoretical study and investigate the detailed electronic structure and nuclear dynamics underlying the electronic absorption bands of propadienylidene molecule. Our results show that this molecule indeed absorbs in the wavelength region of the recorded DIBs. Strong nonadiabatic coupling between its energetically low-lying electronic states plays major role, initiates ultrafast internal conversion and contributes to the spectral broadening. Theoretical findings are finally compared with the available experimental and theoretical data and discussed in connection with the recorded DIBs.

Optimization of a triode-type cusp electron gun for a W-band gyro-TWA

Science.gov (United States)

Zhang, Liang; Donaldson, Craig R.; He, Wenlong

2018-04-01

A triode-type cusp electron gun was optimized through numerical simulations for a W-band gyrotron traveling wave amplifier. An additional electrode in front of the cathode could switch the electron beam on and off instantly when its electric potential is properly biased. An optimal electron beam of current 1.7 A and a velocity ratio (alpha) of 1.12 with an alpha spread of ˜10.7% was achieved when the triode gun was operated at 40 kV.

Vibrational and electronic excitation of hexatriacontane thin films by low energy electron impact

International Nuclear Information System (INIS)

Vilar, M.R.; Schott, M.; Pfluger, P.

1990-01-01

Thin polycrystalline films of hexatriacontane (HTC) were irradiated with low energy (E=0.5--15 eV) electrons, and off-specular backscattered electron spectra were measured. Below E∼7 eV, single and multiple vibrational excitations only are observed, which relax the electrons down to the bottom of the HTC conduction band. Due to the negative electron affinity of HTC, thermal electrons are emitted into vacuum. Structure in the backscattered electron current at kinetic energies about 1.5 and 4 eV are associated to conduction band density of states. Above E∼7 eV, the dominant losses correspond to electronic excitations, excitons, or above a threshold (energy of the electron inside the HTC film) at 9.2±0.1 eV, electron--hole pair generation. The latter process is very efficient and reaches a yield of the order of one ∼11 eV. Evidence for chemical reaction above E∼4 eV is observed

Contributions to the theory of electron spectroscopy. Applications of the relativistic multiple-scattering theory

International Nuclear Information System (INIS)

Henk, J.

2004-01-01

Electron spectroscopy provides access to fundamental properties of solids, such as the geometric, electronic, and the magnetic structure. The latter are necessary for the understanding of a variety of basic but nevertheless important effects. The present work outlines recently developed theoretical approaches to electron spectroscopies. Most of the collected results rely on first-principles calculations, as formulated in multiple-scattering theory, and are contrasted with experimental findings. One topic involves spin- and angle-resolved photoelectron spectroscopy which is addressed for magnetic surfaces and ultrathin films. Exemplary results comprise magnetic dichroism in both valence-band and core-level photoemission as well as the temperature dependence of magnetic properties of ultrathin films. Another topic is spin-dependent ballistic transport through planar tunnel junctions, focusing here on the zero-bias anomaly. In most of the cases, spin-orbit coupling (SOC) is an essential ingredient and, hence, favors a relativistic description. Prominent effects of SOC are illustrated by means of the electronic structure of rare gases adsorbed on a substrate and by the splitting of surface states on Au(111). Concerning magnetism, the magnetic anisotropy of Ni films on Cu(001) is discussed, focusing in particular on the spin reorientation transition induced by lattice distortions in ultrathin films. (orig.)

Dynamical electron-phonon coupling, G W self-consistency, and vertex effect on the electronic band gap of ice and liquid water

Science.gov (United States)

Ziaei, Vafa; Bredow, Thomas

2017-06-01

We study the impact of dynamical electron-phonon (el-ph) effects on the electronic band gap of ice and liquid water by accounting for frequency-dependent Fan contributions in the el-ph mediated self-energy within the many-body perturbation theory (MBPT). We find that the dynamical el-ph coupling effects greatly reduce the static el-ph band-gap correction of the hydrogen-rich molecular ice crystal from-2.46 to -0.23 eV in great contrast to the result of Monserrat et al. [Phys. Rev. B 92, 140302 (2015), 10.1103/PhysRevB.92.140302]. This is of particular importance as otherwise the static el-ph gap correction would considerably reduce the electronic band gap, leading to considerable underestimation of the intense peaks of optical absorption spectra of ice which would be in great disagreement to experimental references. By contrast, the static el-ph gap correction of liquid water is very moderate (-0.32 eV), and inclusion of dynamical effects slightly reduces the gap correction to -0.19 eV. Further, we determine the diverse sensitivity of ice and liquid water to the G W self-consistency and show that the energy-only self-consistent approach (GnWn ) exhibits large implicit vertex character in comparison to the quasiparticle self-consistent approach, for which an explicit calculation of vertex corrections is necessary for good agreement with experiment.

Electronic band structure and optical properties of antimony selenide under pressure

Energy Technology Data Exchange (ETDEWEB)

Abhijit, B.K.; Jayaraman, Aditya; Molli, Muralikrishna, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, 515 134 (India)

2016-05-23

In this work we present the optical properties of Antimony Selenide (Sb{sub 2}Se{sub 3}) under ambient conditions and under pressure of 9.2 GPa obtained using first principles calculations. We investigated the electronic band structure using the FP-LAPW method within the sphere of the density functional theory. Optical properties like refractive index, absorption coefficient and optical conductivity are calculated using the WIEN2k code.

Low-frequency and multiple-bands sound insulation using hollow boxes with membrane-type faces

Science.gov (United States)

Yu, Wei-wei; Fan, Li; Ma, Ren-hao; Zhang, Hui; Zhang, Shu-yi

2018-04-01

Hollow boxes with their faces made up of elastic membranes are used to block acoustic waves. It is demonstrated that placing a cuboid membrane-type box inside a pipe can effectively insulate acoustic waves even if the box is smaller than the cross-section of the pipe. The sound insulation is achieved within multiple frequency-bands below 500 Hz based on different mechanisms, which originate from the coaction of the cavity, membrane-type faces, and the intervals between the box and pipe walls. Furthermore, by adjusting the structural parameters and establishing an array of boxes, we can achieve better sound insulation at more frequency-bands.

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

Science.gov (United States)

Monavarian, Morteza; Hafiz, Shopan; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

Complex band structure and electronic transmission eigenchannels

DEFF Research Database (Denmark)

Jensen, Anders; Strange, Mikkel; Smidstrup, Soren

2017-01-01

and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two...

Spin-dependent electron-phonon coupling in the valence band of single-layer WS₂

DEFF Research Database (Denmark)

Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

2017-01-01

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

Observation of total electron content and irregularities in electron density using GHz band radiowaves emitted from satellite

International Nuclear Information System (INIS)

Ogawa, Tadahiko; Fujita, Masaharu; Awaka, Jun.

1978-01-01

The experiments to investigate the influence of troposphere on millimeter and sub-millimeter wave propagation were carried out, using the engineering test satellite -- 2 (ETS-2) which became the Japanese first stationary satellite and carries the transmitter emitting beacon waves of 1.7, 11.5 and 34.5 GHz coherent each other. By these experiments, it was found that the waves of 1.7 and 11.5 GHz were affected by the ionosphere. The measurement of total electron content using GHz band waves was the first trial in the world, and is capable of grasping its change with higher accuracy than conventional methods. Scintillation of 1.7 GHz is mainly the phenomenon during night, and it was revealed that it has a peak at 22.30 local time and occurred through the radiowave scattering owing to the irregularities of the ionosphere. It is also suggested that some plasma instability is generated in the place where electron density gradient in the ionosphere is large, and the irregularities of fine scale are produced, assuming from GHz band scintillations at the time of magnetic storm. The relations among wave number spectrum, scintillation frequency spectrum and S4 index (statistical quantity to give estimate for scintillation amplitude) can be derived by the weak scattering theory (Simple scattering theory). As seen above, the diagnosis of plasma disturbances in the ionosphere is feasible by the simultaneous observations of total electron content and scintillation. (Wakatsuki, Y.)

Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

International Nuclear Information System (INIS)

Saleh, Navid B.; Milliron, Delia J.; Aich, Nirupam; Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo

2016-01-01

Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

Energy Technology Data Exchange (ETDEWEB)

Saleh, Navid B., E-mail: navid.saleh@utexas.edu [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States); Milliron, Delia J. [McKetta Department of Chemical Engineering, University of Texas, Austin, TX 78712 (United States); Aich, Nirupam [Department of Civil, Structural and Environmental Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260 (United States); Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States)

2016-10-15

Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

Oligoclonal band status in Scandinavian multiple sclerosis patients is associated with specific genetic risk alleles

DEFF Research Database (Denmark)

Mero, Inger-Lise; Gustavsen, Marte W; Sæther, Hanne S

2013-01-01

The presence of oligoclonal bands (OCB) in cerebrospinal fluid (CSF) is a typical finding in multiple sclerosis (MS). We applied data from Norwegian, Swedish and Danish (i.e. Scandinavian) MS patients from a genome-wide association study (GWAS) to search for genetic differences in MS relating...

Proceedings of wide band gap semiconductors

International Nuclear Information System (INIS)

Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

1992-01-01

This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

Mechanisms of fine extinction band development in vein quartz: new insights from correlative light and electron microscopy

Science.gov (United States)

Derez, Tine; Van Der Donck, Tom; Plümper, Oliver; Muchez, Philippe; Pennock, Gill; Drury, Martyn R.; Sintubin, Manuel

2017-07-01

Fine extinction bands (FEBs) (also known as deformation lamellae) visible with polarized light microscopy in quartz consist of a range of nanostructures, inferring different formation processes. Previous transmission electron microscopy studies have shown that most FEB nanostructures in naturally deformed quartz are elongated subgrains formed by recovery of dislocation slip bands. Here we show that three types of FEB nanostructure occur in naturally deformed vein quartz from the low-grade metamorphic High-Ardenne slate belt (Belgium). Prismatic oriented FEBs are defined by bands of dislocation walls. Dauphiné twin boundaries present along the FEB boundaries probably formed after FEB formation. In an example of two sub-rhombohedral oriented FEBs, developed as two sets in one grain, the finer FEB set consists of elongated subgrains, similar to FEBs described in previous transmission electron microscopy studies. The second wider FEB set consists of bands with different dislocation density and fluid-inclusion content. The wider FEB set is interpreted as bands with different plastic strain associated with the primary growth banding of the vein quartz grain. The nanometre-scale fluid inclusions are interpreted to have formed from structurally bounded hydroxyl groups that moreover facilitated formation of the elongate subgrains. Larger fluid inclusions aligned along FEBs are explained by fluid-inclusion redistribution along dislocation cores. The prismatic FEB nanostructure and the relation between FEBs and growth bands have not been recognized before, although related structures have been reported in experimentally deformed quartz.

Direct Measurement of the Band Structure of a Buried Two-Dimensional Electron Gas

DEFF Research Database (Denmark)

Miwa, Jill; Hofmann, Philip; Simmons, Michelle Y.

2013-01-01

We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there...

Statistics of electron multiplication in a multiplier phototube; Iterative method

International Nuclear Information System (INIS)

Ortiz, J. F.; Grau, A.

1985-01-01

In the present paper an iterative method is applied to study the variation of dynode response in the multiplier phototube. Three different situation are considered that correspond to the following ways of electronic incidence on the first dynode: incidence of exactly one electron, incidence of exactly r electrons and incidence of an average r electrons. The responses are given for a number of steps between 1 and 5, and for values of the multiplication factor of 2.1, 2.5, 3 and 5. We study also the variance, the skewness and the excess of jurtosis for different multiplication factors. (Author) 11 refs

ADVANCED X-BAND TEST ACCELERATOR FOR HIGH BRIGHTNESS ELECTRON AND GAMMA RAY BEAMS

Energy Technology Data Exchange (ETDEWEB)

Marsh, R A; Anderson, S G; Barty, C P; Chu, T S; Ebbers, C A; Gibson, D J; Hartemann, F V; Adolphsen, C; Jongewaard, E N; Raubenheimer, T; Tantawi, S G; Vlieks, A E; Wang, J W

2010-05-12

In support of Compton scattering gamma-ray source efforts at LLNL, a multi-bunch test stand is being developed to investigate accelerator optimization for future upgrades. This test stand will enable work to explore the science and technology paths required to boost the current 10 Hz monoenergetic gamma-ray (MEGa-Ray) technology to an effective repetition rate exceeding 1 kHz, potentially increasing the average gamma-ray brightness by two orders of magnitude. Multiple bunches must be of exceedingly high quality to produce narrow-bandwidth gamma-rays. Modeling efforts will be presented, along with plans for a multi-bunch test stand at LLNL. The test stand will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. The photoinjector will be a high gradient standing wave structure, featuring a dual feed racetrack coupler. The accelerator will increase the electron energy so that the emittance can be measured using quadrupole scanning techniques. Multi-bunch diagnostics will be developed so that the beam quality can be measured and compared with theory. Design will be presented with modeling simulations, and layout plans.

Multiple electron processes of He and Ne by proton impact

Science.gov (United States)

Terekhin, Pavel Nikolaevich; Montenegro, Pablo; Quinto, Michele; Monti, Juan; Fojon, Omar; Rivarola, Roberto

2016-05-01

A detailed investigation of multiple electron processes (single and multiple ionization, single capture, transfer-ionization) of He and Ne is presented for proton impact at intermediate and high collision energies. Exclusive absolute cross sections for these processes have been obtained by calculation of transition probabilities in the independent electron and independent event models as a function of impact parameter in the framework of the continuum distorted wave-eikonal initial state theory. A binomial analysis is employed to calculate exclusive probabilities. The comparison with available theoretical and experimental results shows that exclusive probabilities are needed for a reliable description of the experimental data. The developed approach can be used for obtaining the input database for modeling multiple electron processes of charged particles passing through the matter.

Implementation of electronic crosstalk correction for terra MODIS PV LWIR bands

Science.gov (United States)

Geng, Xu; Madhavan, Sriharsha; Chen, Na; Xiong, Xiaoxiong

2015-09-01

The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the fleet of NASA's Earth Observing Systems (EOS) in space. Terra MODIS has completed 15 years of operation far exceeding its design lifetime of 6 years. The MODIS Level 1B (L1B) processing is the first in the process chain for deriving various higher level science products. These products are used mainly in understanding the geophysical changes occurring in the Earth's land, ocean, and atmosphere. The L1B code is designed to carefully calibrate the responses of all the detectors of the 36 spectral bands of MODIS and provide accurate L1B radiances (also reflectances in the case of Reflective Solar Bands). To fulfill this purpose, Look Up Tables (LUTs), that contain calibration coefficients derived from both on-board calibrators and Earth-view characterized responses, are used in the L1B processing. In this paper, we present the implementation mechanism of the electronic crosstalk correction in the Photo Voltaic (PV) Long Wave InfraRed (LWIR) bands (Bands 27-30). The crosstalk correction involves two vital components. First, a crosstalk correction modular is implemented in the L1B code to correct the on-board Blackbody and Earth-View (EV) digital number (dn) responses using a linear correction model. Second, the correction coefficients, derived from the EV observations, are supplied in the form of LUTs. Further, the LUTs contain time stamps reflecting to the change in the coefficients assessed using the Noise Equivalent difference Temperature (NEdT) trending. With the algorithms applied in the MODIS L1B processing it is demonstrated that these corrections indeed restore the radiometric balance for each of the affected bands and substantially reduce the striping noise in the processed images.

Flat electronic bands in fractal-kagomé network and the effect of perturbation

Energy Technology Data Exchange (ETDEWEB)

Nandy, Atanu, E-mail: atanunandy1989@gmail.com; Chakrabarti, Arunava, E-mail: arunava-chakrabarti@yahoo.co.in [Department of Physics, University of Kalyani, Kalyani, West Bengal - 741235 (India)

2016-05-06

We demonstrate an analytical prescription of demonstrating the flat band [FB] states in a fractal incorporated kagomé type network that can give rise to a countable infinity of flat non-dispersive eigenstates with a multitude of localization area. The onset of localization can, in principle, be delayed in space by an appropriate choice of energy regime. The length scale, at which the onset of localization for each mode occurs, can be tuned at will following the formalism developed within the framework of real space renormalization group. This scheme leads to an exact determination of energy eigenvalue for which one can have dispersionless flat electronic bands. Furthermore, we have shown the effect ofuniform magnetic field for the same non-translationally invariant network model that has ultimately led to an‘apparent invisibility’ of such staggered localized states and to generate absolutely continuous sub-bands in the energy spectrum and again an interesting re-entrant behavior of those FB states.

Wide Band to ''Double Band'' upgrade

International Nuclear Information System (INIS)

Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

1988-06-01

The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

Diode laser spectroscopy of oxygen electronic band at 760 nm

International Nuclear Information System (INIS)

Lucchesini, A.; De Rosa, M.; Gozzini, S.

1998-01-01

Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

Towards double-functionalized small diamondoids: selective electronic band-gap tuning

International Nuclear Information System (INIS)

Adhikari, Bibek; Fyta, Maria

2015-01-01

Diamondoids are nanoscale diamond-like cage structures with hydrogen terminations, which can occur in various sizes and with a diverse type of modifications. In this work, we focus on the structural alterations and the effect of doping and functionalization on the electronic properties of diamondoids, from the smallest adamantane to heptamantane. The results are based on quantum mechanical calculations. We perform a self-consistent study, starting with doping the smallest diamondoid, adamantane. Boron, nitrogen, silicon, oxygen, and phosphorus are chosen as dopants at sites which have been previously optimized and are also consistent with the literature. At a next step, an amine- and a thiol- group are separately used to functionalize the adamantane molecule. We mainly focus on a double functionalization of diamondoids up to heptamantane using both these atomic groups. The effect of isomeration in the case of tetramantane is also studied. We discuss the higher efficiency of a double-functionalization compared to doping or a single-functionalization of diamondoids in tuning the electronic properties, such as the electronic band-gap, of modified small diamondoids in view of their novel nanotechnological applications. (paper)

Multiple purpose research complex on the basis of electron accelerators and terahertz free electron laser

International Nuclear Information System (INIS)

Kulipanov, G.N.

2009-01-01

In this report the basic positioning parameters of multiple purpose research complex are presented, the list of potential experiments and technological uses on the example of results received in the multiuser center of G.I. Budker Institut of nuclear physics Siberian department of the Russian Academy of Sciences is discussed. This research complex is directed on work in the big universities and nano technology centers. Electron accelerators is intended for development of electron-beam technologies different material modification, for production of nano powder, nano materials and solution of ecological tasks. In this work the project of multiple purpose research complex on the basis of new generation electron accelerator Il-14 and workable terahertz free electron laser is suggested. Terahertz free electron laser will be used for researches in the sphere of physics and chemistry, biology and medicine, nanotechnology engineering and different methods of nanodiagnostics.

X-band RF Photoinjector for Laser Compton X-ray and Gamma-ray Sources

Energy Technology Data Exchange (ETDEWEB)

Marsh, R. A. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Anderson, G. G. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Anderson, S. G. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Gibson, D. J. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Barty, C. J. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

2015-05-06

Extremely bright narrow bandwidth gamma-ray sources are expanding the application of accelerator technology and light sources in new directions. An X-band test station has been commissioned at LLNL to develop multi-bunch electron beams. This multi-bunch mode will have stringent requirements for the electron bunch properties including low emittance and energy spread, but across multiple bunches. The test station is a unique facility featuring a 200 MV/m 5.59 cell X-band photogun powered by a SLAC XL4 klystron driven by a Scandinova solid-state modulator. This paper focuses on its current status including the generation and initial characterization of first electron beam. Design and installation of the inverse-Compton scattering interaction region and upgrade paths will be discussed along with future applications.

Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

Science.gov (United States)

Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

2012-01-30

The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

Energy Technology Data Exchange (ETDEWEB)

Yin, Y., E-mail: yong.yin@strath.ac.uk, E-mail: yinyong@uestc.edu.cn [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom); He, W.; Zhang, L.; Yin, H.; Cross, A. W. [Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2015-07-15

The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240 W can be achieved at G-band using a pseudospark discharge voltage of 41 kV.

Observation of an electron band above the Fermi level in FeTe0.55Se0.45 from in-situ surface doping

International Nuclear Information System (INIS)

Zhang, P.; Ma, J.; Qian, T.; Richard, P.; Ding, H.; Xu, N.; Xu, Y.-M.; Fedorov, A. V.; Denlinger, J. D.; Gu, G. D.

2014-01-01

We used in-situ potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe 0.55 Se 0.45 . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily electron-doped KFe 2−x Se 2 compound.

Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

Institute of Scientific and Technical Information of China (English)

Tai Wang; Yong-Quan Guo; Shuai Li

2017-01-01

The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

Multiple-electron processes in fast ion-atom collisions

International Nuclear Information System (INIS)

Schlachter, A.S.

1989-03-01

Research in atomic physics at the Lawrence Berkeley Laboratory Super-HILAC and Bevalac accelerators on multiple-electron processes in fast ion-atom collisions is described. Experiments have studied various aspects of the charge-transfer, ionization, and excitation processes. Examples of processes in which electron correlation plays a role are resonant transfer and excitation and Auger-electron emission. Processes in which electron behavior can generally be described as uncorrelated include ionization and charge transfer in high-energy ion-atom collisions. A variety of experiments and results for energies from 1 MeV/u to 420 MeV/u are presented. 20 refs., 15 figs

Effect of superconductivity on the cubic to tetragonal structural transition due to a two-fold degenerate electronic band

International Nuclear Information System (INIS)

Ghatak, S.K.; Khanra, B.C.; Ray, D.K.

1978-01-01

The effect of the BCS superconductivity on the cubic to tetragonal structural transition arising from a two-fold degenerate electronic band is investigated within the mean field approximation. The phase diagram of the two transitions is given for a half filled esub(g)-band. Modification of the two transitions when they are close together is also discussed. (author)

Role of Electronic Structure In Ion Band State Theory of Low Energy Nuclear Reactions

Science.gov (United States)

Chubb, Scott

2004-03-01

The Nuts and Bolts of our Ion Band State (IBS) theory of low energy nuclear reactions (LENR's) in palladium-deuteride (PdD) and palladium-hydride (PdH) are the electrons that hold together or tear apart the bonds (or lack of bonds) between deuterons (d's) or protons (p's) and the host material. In PdDx and PdH_x, this bonding is strongly correlated with loading: in ambient loading conditions (x< 0. 6), the bonding in hibits IBS occupation. As x arrow 1, slight increases and decreases in loading can lead to vibrations (which have conventionally been thought to occur from phonons) that can induce potential losses or increases of p/d. Naive assumptions about phonons fail to include these losses and increases. These effects can occur because neither H or D has core electrons and because in either PdD or PdH, the electrons near the Fermi Energy have negligible overlap with the nucleus of either D or H. I use these ideas to develop a formal justification, based on a generalization of conventional band theory (Scott Chubb, "Semi-Classical Conduction of Charged and Neutral Particles in Finite Lattices," 2004 March Meeting."), for the idea that occupation of IBS's can occur and that this can lead to nuclear reactions.

Band structures in a two-dimensional phononic crystal with rotational multiple scatterers

Science.gov (United States)

Song, Ailing; Wang, Xiaopeng; Chen, Tianning; Wan, Lele

2017-03-01

In this paper, the acoustic wave propagation in a two-dimensional phononic crystal composed of rotational multiple scatterers is investigated. The dispersion relationships, the transmission spectra and the acoustic modes are calculated by using finite element method. In contrast to the system composed of square tubes, there exist a low-frequency resonant bandgap and two wide Bragg bandgaps in the proposed structure, and the transmission spectra coincide with band structures. Specially, the first bandgap is based on locally resonant mechanism, and the simulation results agree well with the results of electrical circuit analogy. Additionally, increasing the rotation angle can remarkably influence the band structures due to the transfer of sound pressure between the internal and external cavities in low-order modes, and the redistribution of sound pressure in high-order modes. Wider bandgaps are obtained in arrays composed of finite unit cells with different rotation angles. The analysis results provide a good reference for tuning and obtaining wide bandgaps, and hence exploring the potential applications of the proposed phononic crystal in low-frequency noise insulation.

Application of mid-infrared free-electron laser tuned to amide bands for dissociation of aggregate structure of protein.

Science.gov (United States)

Kawasaki, Takayasu; Yaji, Toyonari; Ohta, Toshiaki; Tsukiyama, Koichi

2016-01-01

A mid-infrared free-electron laser (FEL) is a linearly polarized, high-peak powered pulse laser with tunable wavelength within the mid-infrared absorption region. It was recently found that pathogenic amyloid fibrils could be partially dissociated to the monomer form by the irradiation of the FEL targeting the amide I band (C=O stretching vibration), amide II band (N-H bending vibration) and amide III band (C-N stretching vibration). In this study, the irradiation effect of the FEL on keratin aggregate was tested as another model to demonstrate an applicability of the FEL for dissociation of protein aggregates. Synchrotron radiation infrared microscopy analysis showed that the α-helix content in the aggregate structure decreased to almost the same level as that in the monomer state after FEL irradiation tuned to 6.06 µm (amide I band). Both irradiations at 6.51 µm (amide II band) and 8.06 µm (amide III band) also decreased the content of the aggregate but to a lesser extent than for the irradiation at the amide I band. On the contrary, the irradiation tuned to 5.6 µm (non-absorbance region) changed little the secondary structure of the aggregate. Scanning-electron microscopy observation at the submicrometer order showed that the angular solid of the aggregate was converted to non-ordered fragments by the irradiation at each amide band, while the aggregate was hardly deformed by the irradiation at 5.6 µm. These results demonstrate that the amide-specific irradiation by the FEL was effective for dissociation of the protein aggregate to the monomer form.

Microstructural evolution in adiabatic shear bands of copper at high strain rates: Electron backscatter diffraction characterization

International Nuclear Information System (INIS)

Tang Lin; Chen Zhiyong; Zhan Congkun; Yang Xuyue; Liu Chuming; Cai Hongnian

2012-01-01

The microstructural evolution of adiabatic shear bands in annealed copper with different large strains at high strain rates has been investigated by electron backscatter diffraction. The results show that mechanical twinning can occur with minimal contribution to shear localization under dynamic loading. Elongated ultrafine grains with widths of 100–300 nm are observed during the evolution of the adiabatic shear bands. A rotational dynamic recrystallization mechanism is proposed to explain the formation of the elongated ultrafine grains. - Highlights: ► The microstructural evolution of ASB is studied by electron backscatter diffraction. ► Twinning can occur in ASB while the contribution to shear localization is slight. ► Elongated ultrafine grains are observed during the evolution process of ASB. ► A possible mechanism is proposed to explain the microstructure evolution of ASB.

Optical band gap of ZnO thin films deposited by electron beam evaporation

International Nuclear Information System (INIS)

Nadeem, M. Y.; Ali, S. L.; Wasiq, M. F.; Rana, A. M.

2006-01-01

Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 As/sup -1/ to 15 As /sup -1/ and thickness ranging 1000A to 3000A is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15 eV, 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000A, 2000 A, 3000 A on increasing the evaporation rate from 5 As/sup-1/ to As/sup -1/ by keeping thickness constant. (author)

Band Subset Selection for Hyperspectral Image Classification

Directory of Open Access Journals (Sweden)

Chunyan Yu

2018-01-01

Full Text Available This paper develops a new approach to band subset selection (BSS for hyperspectral image classification (HSIC which selects multiple bands simultaneously as a band subset, referred to as simultaneous multiple band selection (SMMBS, rather than one band at a time sequentially, referred to as sequential multiple band selection (SQMBS, as most traditional band selection methods do. In doing so, a criterion is particularly developed for BSS that can be used for HSIC. It is a linearly constrained minimum variance (LCMV derived from adaptive beamforming in array signal processing which can be used to model misclassification errors as the minimum variance. To avoid an exhaustive search for all possible band subsets, two numerical algorithms, referred to as sequential (SQ and successive (SC algorithms are also developed for LCMV-based SMMBS, called SQ LCMV-BSS and SC LCMV-BSS. Experimental results demonstrate that LCMV-based BSS has advantages over SQMBS.

Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

2017-10-15

In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

International Nuclear Information System (INIS)

Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

2017-01-01

In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

Energy Technology Data Exchange (ETDEWEB)

Junay, A.; Guézo, S., E-mail: sophie.guezo@univ-rennes1.fr; Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F. [Département Matériaux-Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex (France)

2015-08-28

We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

Electronic band structure and optical properties of the cubic, Sc, Y and La hydride systems

International Nuclear Information System (INIS)

Peterman, D.J.

1980-01-01

Electronic band structure calculations are used to interpret the optical spectra of the cubic Sc, Y and La hydride systems. Self-consistent band calculations of ScH 2 and YH 2 were carried out. The respective joint densities of states are computed and compared to the dielectric functions determined from the optical measurements. Additional calculations were performed in which the Fermi level or band gap energies are rigidly shifted by a small energy increment. These calculations are then used to simulate the derivative structure in thermomodulation spectra and relate the origin of experimental interband features to the calculated energy bands. While good systematic agreement is obtained for several spectral features, the origin of low-energy interband transitions in YH 2 cannot be explained by these calculated bands. A lattice-size-dependent premature occupation of octahedral sites by hydrogen atoms in the fcc metal lattice is suggested to account for this discrepancy. Various non-self-consistent calculations are used to examine the effect of such a premature occupation. Measurements of the optical absorptivity of LaH/sub x/ with 1.6 2 lattice. These experimental results also suggest that, in contrast to recent calculations, LaH 3 is a small-band-gap semiconductor

Wakefield Band Partitioning in LINAC Structures

International Nuclear Information System (INIS)

Jones, Roger M

2003-01-01

In the NLC project multiple bunches of electrons and positrons will be accelerated initially to a centre of mass of 500 GeV and later to 1 TeV or more. In the process of accelerating 192 bunches within a pulse train, wakefields are excited which kick the trailing bunches off axis and can cause luminosity dilution and BBU (Beam Break Up). Several structures to damp the wakefield have been designed and tested at SLAC and KEK and these have been found to successfully damp the wakefield [1]. However, these 2π/3 structures suffered from electrical breakdown and this has prompted us to explore lower group velocity structures operating at higher fundamental mode phase advances. The wakefield partitioning amongst the bands has been found to change markedly with increased phase advance. Here we report on general trends in the kick factor and associated wakefield band partitioning in dipole bands as a function of phase advance of the synchronous mode in linacs. These results are applicable to both TW (travelling wave) and SW (standing wave) structures

S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

International Nuclear Information System (INIS)

Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

2005-01-01

S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

First-principle study of the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP

Science.gov (United States)

Yang, H. Q.; Song, T. L.; Liang, X. X.; Zhao, G. J.

2015-01-01

In this work, the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP are studied by the first principle calculations. The software QUANTUM ESPRESSO and the generalized gradient approximation (GGA) for the exchange correlations have been used in the calculations. We calculate the lattice parameter, band gap and effective mass of the ternary alloy GaxIn1-xP for the Ga composition x varying from 0.0 to 1.0 by the step of 0.125. The effect of the Ga composition on the lattice parameter and the electronic density of states are discussed. The results show that the lattice parameter varies with the composition almost linearly following the Vegard's law. A direct-to-indirect band-gap crossover is found to occur close to x = 0.7. The effective masses are also calculated at Γ(000) high symmetry point along the [100] direction. The results show that the band gap and the electron effective mass vary nonlinearly with composition x.

Observation of laser multiple filamentation process and multiple electron beams acceleration in a laser wakefield accelerator

International Nuclear Information System (INIS)

Li, Wentao; Liu, Jiansheng; Wang, Wentao; Chen, Qiang; Zhang, Hui; Tian, Ye; Zhang, Zhijun; Qi, Rong; Wang, Cheng; Leng, Yuxin; Li, Ruxin; Xu, Zhizhan

2013-01-01

The multiple filaments formation process in the laser wakefield accelerator (LWFA) was observed by imaging the transmitted laser beam after propagating in the plasma of different density. During propagation, the laser first self-focused into a single filament. After that, it began to defocus with energy spreading in the transverse direction. Two filaments then formed from it and began to propagate independently, moving away from each other. We have also demonstrated that the laser multiple filamentation would lead to the multiple electron beams acceleration in the LWFA via ionization-induced injection scheme. Besides, its influences on the accelerated electron beams were also analyzed both in the single-stage LWFA and cascaded LWFA

Genes with a spike expression are clustered in chromosome (sub)bands and spike (sub)bands have a powerful prognostic value in patients with multiple myeloma

Science.gov (United States)

Kassambara, Alboukadel; Hose, Dirk; Moreaux, Jérôme; Walker, Brian A.; Protopopov, Alexei; Reme, Thierry; Pellestor, Franck; Pantesco, Véronique; Jauch, Anna; Morgan, Gareth; Goldschmidt, Hartmut; Klein, Bernard

2012-01-01

Background Genetic abnormalities are common in patients with multiple myeloma, and may deregulate gene products involved in tumor survival, proliferation, metabolism and drug resistance. In particular, translocations may result in a high expression of targeted genes (termed spike expression) in tumor cells. We identified spike genes in multiple myeloma cells of patients with newly-diagnosed myeloma and investigated their prognostic value. Design and Methods Genes with a spike expression in multiple myeloma cells were picked up using box plot probe set signal distribution and two selection filters. Results In a cohort of 206 newly diagnosed patients with multiple myeloma, 2587 genes/expressed sequence tags with a spike expression were identified. Some spike genes were associated with some transcription factors such as MAF or MMSET and with known recurrent translocations as expected. Spike genes were not associated with increased DNA copy number and for a majority of them, involved unknown mechanisms. Of spiked genes, 36.7% clustered significantly in 149 out of 862 documented chromosome (sub)bands, of which 53 had prognostic value (35 bad, 18 good). Their prognostic value was summarized with a spike band score that delineated 23.8% of patients with a poor median overall survival (27.4 months versus not reached, Pband score was independent of other gene expression profiling-based risk scores, t(4;14), or del17p in an independent validation cohort of 345 patients. Conclusions We present a new approach to identify spike genes and their relationship to patients’ survival. PMID:22102711

Electronic Energy Levels and Band Alignment for Aqueous Phenol and Phenolate from First Principles.

Science.gov (United States)

Opalka, Daniel; Pham, Tuan Anh; Sprik, Michiel; Galli, Giulia

2015-07-30

Electronic energy levels in phenol and phenolate solutions have been computed using density functional theory and many-body perturbation theory. The valence and conduction bands of the solvent and the ionization energies of the solutes have been aligned with respect to the vacuum level based on the concept of a computational standard hydrogen electrode. We have found significant quantitative differences between the generalized-gradient approximation, calculations with the HSE hybrid functional, and many-body perturbation theory in the G0W0 approximation. For phenol, two ionization energies below the photoionization threshold of bulk water have been assigned in the spectrum of Kohn-Sham eigenvalues of the solution. Deprotonation to phenolate was found to lift a third occupied energy level above the valence band maximum of the solvent which is characterized by an electronic lone pair at the hydroxyl group. The second and third ionization energies of phenolate were found to be very similar and explain the intensity pattern observed in recent experiments using liquid-microjet photoemission spectroscopy.

High-resolution electron spectroscopy of lanthanide (Ce, Pr, and Nd) complexes of cyclooctatetraene: the role of 4f electrons.

Science.gov (United States)

Kumari, Sudesh; Roudjane, Mourad; Hewage, Dilrukshi; Liu, Yang; Yang, Dong-Sheng

2013-04-28

Cerium, praseodymium, and neodymium complexes of 1,3,5,7-cyclooctatetraene (COT) complexes were produced in a laser-vaporization metal cluster source and studied by pulsed-field ionization zero electron kinetic energy spectroscopy and quantum chemical calculations. The computations included the second-order Møller-Plesset perturbation theory, the coupled cluster method with single, double, and perturbative triple excitations, and the state-average complete active space self-consistent field method. The spectrum of each complex exhibits multiple band systems and is assigned to ionization of several low-energy electronic states of the neutral complex. This observation is different from previous studies of M(COT) (M = Sc, Y, La, and Gd), for which a single band system was observed. The presence of the multiple low-energy electronic states is caused by the splitting of the partially filled lanthanide 4f orbitals in the ligand field, and the number of the low-energy states increases rapidly with increasing number of the metal 4f electrons. On the other hand, the 4f electrons have a small effect on the geometries and vibrational frequencies of these lanthanide complexes.

Continuum multiple-scattering approach to electron-molecule scattering and molecular photoionization

International Nuclear Information System (INIS)

Dehmer, J.L.; Dill, D.

1979-01-01

The multiple-scattering approach to the electronic continuum of molecules is described. The continuum multiple-scattering model (CMSM) was developed as a survey tool and, as such was required to satisfy two requirements. First, it had to have a very broad scope, which means (i) molecules of arbitrary geometry and complexity containing any atom in the periodic system, (ii) continuum electron energies from 0-1000 eV, and (iii) capability to treat a large range of processes involving both photoionization and electron scattering. Second, the structure of the theory was required to lend itself to transparent, physical interpretation of major spectral features such as shape resonances. A comprehensive theoretical framework for the continuum multiple scattering method is presented, as well as its applications to electron-molecule scattering and molecular photoionization. Highlights of recent applications in these two areas are reviewed. The major impact of the resulting studies over the last few years has been to establish the importance of shape resonances in electron collisions and photoionization of practically all (non-hydride) molecules

Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

2017-10-01

We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

Science.gov (United States)

Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

2018-05-01

Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

Position space Green's function and its application to a non-muffin tin band theory

International Nuclear Information System (INIS)

Brown, R.G.

1982-01-01

A new way of applying the non-spherically symmetric phase functional method of Williams and Van Morgan to the band structure problem is derived that results in a generalized (non-muffin tin) multiple scattering band theory that is variationally stationary and exact in the single-electron, local potential Schroedinger theory. The phase functional basis derived arises from considering integral equation solutions to differential equations of the Schroedinger or inhomogeneous Helmholtz type. It is shown to be conditionally complete on any spherical domain. It is applied to the ordinary scattering problem and the general multiple scattering problem, where it is shown that any multiple scattering theory that is muffin tin approximated can probably have the approximation removed. The so-called near field correction that is believed to destroy the separability of KKR-like band theories or multiple scattering problems where the bounding spheres of nearest neighbor domains overlap is shown to be generally absorbed in a convergent fashion into the usual sum over structure constants in the theory. The extension of this theory to a full self-consistent-field calculation is briefly discussed, but the actual derivations are deferred until various numerical tests in progress are completed

Ultra-Thin Multi-Band Polarization-Insensitive Microwave Metamaterial Absorber Based on Multiple-Order Responses Using a Single Resonator Structure

Directory of Open Access Journals (Sweden)

Yong Zhi Cheng

2017-10-01

Full Text Available We design an ultra-thin multi-band polarization-insensitive metamaterial absorber (MMA using a single circular sector resonator (CSR structure in the microwave region. Simulated results show that the proposed MMA has three distinctive absorption peaks at 3.35 GHz, 8.65 GHz, and 12.44 GHz, with absorbance of 98.8%, 99.7%, and 98.3%, respectively, which agree well with an experiment. Simulated surface current distributions of the unit-cell structure reveal that the triple-band absorption mainly originates from multiple-harmonic magnetic resonance. The proposed triple-band MMA can remain at a high absorption level for all polarization of both transverse-electric (TE and transverse-magnetic (TM modes under normal incidence. Moreover, by further optimizing the geometric parameters of the CSRs, four-band and five-band MMAs can also be obtained. Thus, our design will have potential application in detection, sensing, and stealth technology.

The electronic band parameters calculated by the Kronig-Penney method for Cd1-xZnxS quantum dot superlattices

International Nuclear Information System (INIS)

Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

2009-01-01

This work reports on a theoretical study of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. We show, in particular, how this system can be assumed to a series of flattened cylindrical quantum dots with a finite barrier height at the boundary. In this paper, are also reviewed the approximations needed to calculate the band edges of the Cd 1-x Zn x S superlattices with use of the Kronig-Penney model. The electronic states and the electron effective masses of both Γ 1 - and Γ 2 -minibands have been computed as a function of zinc composition for different inter-quantum dot separations. As is found, the CdS system is appropriate to give rise a superlattice behavior for conduction electrons in a relatively large range of inter-sheet separations. An attempt to explain the electron band parameters calculated will be presented.

Generation of multiple excitons in Ag2S quantum dots: Single high-energy versus multiple-photon excitation

KAUST Repository

Sun, Jingya; Yu, Weili; Usman, Anwar; Isimjan, Tayirjan T.; Del Gobbo, Silvano; Alarousu, Erkki; Takanabe, Kazuhiro; Mohammed, Omar F.

2014-01-01

We explored biexciton generation via carrier multiplication (or multiple-exciton generation) by high-energy photons and by multiple-photon absorption in Ag2S quantum dots (QDs) using femtosecond broad-band transient absorption spectroscopy. Irrespective of the size of the QDs and how the multiple excitons are generated in the Ag2S QDs, two distinct characteristic time constants of 9.6-10.2 and 135-175 ps are obtained for the nonradiative Auger recombination of the multiple excitons, indicating the existence of two binding excitons, namely, tightly bound and weakly bound excitons. More importantly, the lifetimes of multiple excitons in Ag 2S QDs were about 1 and 2 orders of magnitude longer than those of comparable size PbS QDs and single-walled carbon nanotubes, respectively. This result is significant because it suggests that by utilizing an appropriate electron acceptor, there is a higher possibility to extract multiple electron-hole pairs in Ag2S QDs, which should improve the performance of QD-based solar cell devices. © 2014 American Chemical Society.

Generation of multiple excitons in Ag2S quantum dots: Single high-energy versus multiple-photon excitation

KAUST Repository

Sun, Jingya

2014-02-20

We explored biexciton generation via carrier multiplication (or multiple-exciton generation) by high-energy photons and by multiple-photon absorption in Ag2S quantum dots (QDs) using femtosecond broad-band transient absorption spectroscopy. Irrespective of the size of the QDs and how the multiple excitons are generated in the Ag2S QDs, two distinct characteristic time constants of 9.6-10.2 and 135-175 ps are obtained for the nonradiative Auger recombination of the multiple excitons, indicating the existence of two binding excitons, namely, tightly bound and weakly bound excitons. More importantly, the lifetimes of multiple excitons in Ag 2S QDs were about 1 and 2 orders of magnitude longer than those of comparable size PbS QDs and single-walled carbon nanotubes, respectively. This result is significant because it suggests that by utilizing an appropriate electron acceptor, there is a higher possibility to extract multiple electron-hole pairs in Ag2S QDs, which should improve the performance of QD-based solar cell devices. © 2014 American Chemical Society.

Emission bands of phosphorus and calculation of band structure of rare earth phosphides

International Nuclear Information System (INIS)

Al'perovich, G.I.; Gusatinskij, A.N.; Geguzin, I.I.; Blokhin, M.A.; Torbov, V.I.; Chukalin, V.I.; AN SSSR, Moscow. Inst. Novykh Khimicheskikh Problem)

1977-01-01

The method of x-ray emission spectroscopy has been used to investigate the electronic structure of monophosphides of rare-earth metals (REM). The fluorescence K bands of phosphorus have been obtained in LaP, PrP, SmP, GdP, TbP, DyP, HoP, ErP, TmP, YbP, and LuP and also the Lsub(2,3) bands of phosphorus in ErP, TmP, YbP, and LuP. Using the Green function technique involving the muffin-tin potential, the energy spectrum for ErP has been calculated in the single-electron approximation. The hystogram of electronic state distribution N(E) is compared with the experimental K and Lsub(2,3) bands of phosphorus in ErP. The agreement between the main details of N(E) and that of x-ray spectra allows to state that the model used provides a good description of the electron density distribution in crystals of REM monophosphides. In accordance with the character of the N(E) distribution the compounds under study are classified as semimetals or semiconductors with a very narrow forbidden band

Observation of muon-electron pairs in neutrino reactions

International Nuclear Information System (INIS)

Hoffmann, D.

1980-05-01

The present thesis describes the observation of muon-electron pairs in neutrino reactions. This experiment was performed using an optical multiplate spark chamber in the broad band neutrino beam of the CERN proton synchrotron. (orig.) [de

Multiple loss processes of relativistic electrons outside the heart of outer radiation belt during a storm sudden commencement

International Nuclear Information System (INIS)

Yu, J.

2015-01-01

By examining the compression-induced changes in the electron phase space density and pitch angle distribution observed by two satellites of Van Allen Probes (RBSP-A/B), we find that the relativistic electrons (>2 MeV) outside the heart of outer radiation belt (L*≥5) undergo multiple losses during a storm sudden commencement. The relativistic electron loss mainly occurs in the field-aligned direction (pitch angle α < 30° or >150°), and the flux decay of the field-aligned electrons is independent of the spatial location variations of the two satellites. However, the relativistic electrons in the pitch angle range of 30°–150° increase (decrease) with the decreasing (increasing) geocentric distance (|ΔL|<0.25) of the RBSP-B (RBSP-A) location, and the electron fluxes in the quasi-perpendicular direction display energy-dispersive oscillations in the Pc5 period range (2–10 min). The relativistic electron loss is confirmed by the decrease of electron phase space density at high-L shell after the magnetospheric compressions, and their loss is associated with the intense plasmaspheric hiss, electromagnetic ion cyclotron (EMIC) waves, relativistic electron precipitation (observed by POES/NOAA satellites at 850 km), and magnetic field fluctuations in the Pc5 band. Finally, the intense EMIC waves and whistler mode hiss jointly cause the rapidly pitch angle scattering loss of the relativistic electrons within 10 h. Moreover, the Pc5 ULF waves also lead to the slowly outward radial diffusion of the relativistic electrons in the high-L region with a negative electron phase space density gradient.

Band structure of semiconductors

CERN Document Server

Tsidilkovski, I M

2013-01-01

Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

Positron and electron energy bands in several ionic crystals using restricted Hartree-Fock method

Science.gov (United States)

Kunz, A. B.; Waber, J. T.

1981-08-01

Using a restricted Hartree-Fock formalism and suitably localized and symmetrized wave functions, both the positron and electron energy bands were calculated for NaF, MgO and NiO. The lowest positron state at Γ 1 lies above the vacuum level and negative work functions are predicted. Positron annihilation rates were calculated and found to be in good agreement with measured lifetimes.

A comparison of L-band and C-band rf guns as sources for inline-injection systems

International Nuclear Information System (INIS)

Gallardo, J.C.; Kirk, H.G.; Meyerer, T.

1994-12-01

We consider the beam dynamics associated with installing a BNL type 1 1/2 cell L-band or C-band rf gun before two TESLA L-band cryomodules. This system will deliver a 25 MeV electron beam with peak currents on the order of 100 A suitable for further magnetic compression. evaluate the injection systems utilizing the electron beam dynamic code PARMELA from the point of view of minimizing the transverse invariant emittance

A five-picosecond electron pulse from ANL (Argonne National Laboratory) L-Band Linac

International Nuclear Information System (INIS)

Cox, G.L.; Jonah, C.D.; Ficht, D.T.; Mavrogenes, G.S.; Sauer, M.C. Jr.

1989-01-01

The pulse-compression system of the Argonne National Laboratory Chemistry Division L-Band Linac, presented at the 1986 Linear Accelerator Conference at Stanford, California, has been completed. A five-picosecond-wide electron pulse containing 6 x 10 -9 coulomb charge has been achieved. Acceleration parameters and the pulse-width measurement technique are discussed, and future plans for the utilization of this pulse in radiation chemistry studies are presented. 5 refs., 4 figs

Behavioral changes induced by single and multiple electron beam pulses

International Nuclear Information System (INIS)

Pease, V.P.; McNulty, P.J.

1985-01-01

The effects of single, and low-dose, high-dose-rate and multiple electron beam pulses on passive avoidance behavior in mice were studied. Passive avoidance was measured by recording the time that an animal took to enter a chamber from a narrow platform. There were four conditions in the experiment: (1) no shock no radiation-control, (2) radiation only, (3) shock only, and (4) radiation plus shock. Forty animals were run for each data point. Dose rate was held constant at 9 x 10/sup 7/ rads/sec. Average doses for the two single pulses were 7.18 and 8.72 rads. The average total dose for a 25 pulse per second condition was 324.0 rads. The differences between the single versus multiple pulse radiation-only conditions were significant with longer avoidance latencies in the multiple pulse condition. Avoidance latencies were also significantly longer in the shock plus radiation condition for the multiple beam pulse than the single pulse. It is concluded that single and multiple electron beam pulses significantly effect behavior, in this case producing avoidance

Crystal structure, electrical properties and electronic band structure of tantalum ditelluride

CERN Document Server

Vernes, A; Bensch, W; Heid, W; Naether, C

1998-01-01

Motivated by the unexpectedly strong influence of the Te atoms on the structural and bonding properties of the transition metal tellurides, we have performed a detailed study of TaTe sub 2. Experimentally, this comprises a crystal structure determination as well as electrical resistivity measurements. The former analysis leads to an accurate update of the structural data reported in the 1960s, while the latter provides evidence for the mainly electronic character of scattering processes leading to the electrical conductivity. In addition, the electronic properties of TaTe sub 2 have been calculated using the TB-LMTO method. The partial density of states reflects the close connection of the Ta zigzag chains and the Te-Te network. This finding explains the charge transfer in the system in a rather simple way. The orthogonal-orbital character of the bands proved the existence of pi-bonds. The Fermi-surface study supports the interpretation of the experimental resistivity measurements. (author)

Transport of electrons in lead oxide studied by CELIV technique

International Nuclear Information System (INIS)

Semeniuk, O; Juska, G; Oelerich, J O; Jandieri, K; Baranovskii, S D; Reznik, A

2017-01-01

Although polycrystalline lead oxide (PbO) has a long history of application in optoelectronics and imaging, the transport mechanism for electrons in this material has not yet been clarified. Using the photo-generated charge extraction by linear increasing voltage (photo-CELIV) technique, we provide the temperature- and field-dependences of electron mobility in poly-PbO. It is found that electrons undergo dispersive transport, i.e. their mobility decreases in the course of time. Multiple trapping of electrons from the conduction band into the developed band tail is revealed as the dominant transport mechanism. This differs dramatically from the dispersive transport of holes in the same material, dominated by topological factors and not by energy disorder. (paper)

Advances in X-Band and S-Band Linear Accelerators for Security, NDT, and Other Applications

CERN Document Server

Mishin, Andrey V

2005-01-01

At AS&E High Energy Systems Division, we designed several new advanced high energy electron beam and X-ray sources. Our primary focus has always been in building the world's most portable commercial X-band accelerators. Today, our X-band systems frequently exceed performance of the similar S-band machines, while they are more portable compared to the latter. The new designs of the X-band accelerators in the most practical energy range from 1 MeV to 6 MeV have been tested delivering outstanding results. Seventy 6 MeV X-band linacs systems have been produced. The most compact linac for security is used by AS&E in a self-shielded, Shaped Energy™ cargo screening system. We pioneered using the X-band linear accelerators for CT, producing high quality images of oil pipes and wood logs. An X-band linear accelerator head on a robotic arm has been used for electron beam radiation curing of an odd-shaped graphite composite part. We developed the broad-range 4 MeV to over 10 MeV energy-regulated X-band ...

Interfacial electron-transfer equilibria and flat-band potentials of α-Fe2O3 and TiO2 colloids studied by pulse radiolysis

International Nuclear Information System (INIS)

Dimitrijevic, N.M.; Savic, D.; Micic, O.I.; Nozik, A.J.

1984-01-01

The kinetics and equilibria of electron transfer between methylviologen cation radicals and α-Fe 2 O 3 or TiO 2 colloidal particles were studied with the pulse-radiolysis technique. The rates of electron transfer to both colloids are lower than those predicted for a diffusion-controlled reaction. For higher pHs (TiO 2 , pH > 2; α-Fe 2 O 3 , pH > 9) the established equilibrium MV + in equilibrium MV 2+ + (e - )/sub coll/ is strongly influenced by the MV 2+ concentration and pH. The MV + equilibrium concentration can be exploited to derive the flat-band potential of the semiconductor colloids. The method for determining the flat-band potential of the particles is independent of whether the injected electrons are free or trapped, and whether the electrons raise the bulk Fermi level toward the conduction band or just produce a space charge. The flat-band potentials for both colloids appear to be somewhat more negative (-0.1 to -0.2 V) than the corresponding single-crystal electrodes. Also, the flat-band potentials become slightly more negative with increasing radiation dose (initial MV + concentration). The effect of absorbed radiation dose is explained by the corresponding changes in the ratio of oxidized to reduced forms of the redox couple, which in turn changes the adsorbed ionic charge on the semiconductor surface. For colloidal particles of TiO 2 stabilized by poly(vinyl alcohol) (PVA), the flat-band potentials were almost the same as those for PVA-free TiO 2 sols. The decrease of particle diameter from 800 to 70 A does not affect the value of the flat-band potentials for TiO 2 and α-Fe 2 O 3 colloids. 28 references, 9 figures

Design of an X -band electron linear accelerator dedicated to decentralized 99Mo/99mTc supply: From beam energy selection to yield estimation

Science.gov (United States)

Jang, Jaewoong; Yamamoto, Masashi; Uesaka, Mitsuru

2017-10-01

The most frequently used radionuclide in diagnostic nuclear medicine, 99mTc, is generally obtained by the decay of its parent radionuclide, 99Mo. Recently, concerns have been raised over shortages of 99Mo/99mTc, owing to aging of the research reactors which have been supplying practically all of the global demand for 99Mo in a centralized fashion. In an effort to prevent such 99Mo/99mTc supply disruption and, furthermore, to ameliorate the underlying instability of the centralized 99Mo/99mTc supply chain, we designed an X -band electron linear accelerator which can be distributed over multiple regions, whereby 99Mo/99mTc can be supplied with improved accessibility. The electron beam energy was designed to be 35 MeV, at which an average beam power of 9.1 kW was calculated by the following beam dynamics analysis. Subsequent radioactivity modeling suggests that 11 of the designed electron linear accelerators can realize self-sufficiency of 99Mo/99mTc in Japan.

Design of an X-band electron linear accelerator dedicated to decentralized ^{99}Mo/^{99m}Tc supply: From beam energy selection to yield estimation

Directory of Open Access Journals (Sweden)

Jaewoong Jang

2017-10-01

Full Text Available The most frequently used radionuclide in diagnostic nuclear medicine, ^{99m}Tc, is generally obtained by the decay of its parent radionuclide, ^{99}Mo. Recently, concerns have been raised over shortages of ^{99}Mo/^{99m}Tc, owing to aging of the research reactors which have been supplying practically all of the global demand for ^{99}Mo in a centralized fashion. In an effort to prevent such ^{99}Mo/^{99m}Tc supply disruption and, furthermore, to ameliorate the underlying instability of the centralized ^{99}Mo/^{99m}Tc supply chain, we designed an X-band electron linear accelerator which can be distributed over multiple regions, whereby ^{99}Mo/^{99m}Tc can be supplied with improved accessibility. The electron beam energy was designed to be 35 MeV, at which an average beam power of 9.1 kW was calculated by the following beam dynamics analysis. Subsequent radioactivity modeling suggests that 11 of the designed electron linear accelerators can realize self-sufficiency of ^{99}Mo/^{99m}Tc in Japan.

Electronic structure of the misfit layer compound (SnS)(1.20)TiS2 : Band structure calculations and photoelectron spectra

NARCIS (Netherlands)

Fang, CM; deGroot, RA; Wiegers, GA; Haas, C

1996-01-01

In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)(1.20)TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

Electronic structure of the misfit layer compound (SnS)1.20TiS2 : band structure calculations and photoelectron spectra

NARCIS (Netherlands)

Fang, C.M.; Groot, R.A. de; Wiegers, G.A.; Haas, C.

1996-01-01

In order to understand the electronic structure of the incommensurate misfit layer compound (SnS)1.20TiS2 we carried out an ab initio band structure calculation in the supercell approximation. The band structure is compared with that of the components 1T-TiS2 and hypothetical SnS with a similar

A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications.

Science.gov (United States)

Rahman, MuhibUr; Ko, Dong-Sik; Park, Jung-Dong

2017-09-25

We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN. In order to estimate the frequency shifts of the notch due to the coupling of the nearby CSRRs, an analysis of the coupling among the multiple notch resonators is carried out and we construct the lumped-circuit equivalent model. The time domain analysis of the proposed antenna is performed to show its validity on the UWB application. The measured frequency response of the input port corresponds quite well with the calculations and simulations. The radiation pattern of the implemented quad-notched UWB antenna is nearly omnidirectional in the passband.

Temperature-Induced Large Broadening and Blue Shift in the Electronic Band Structure and Optical Absorption of Methylammonium Lead Iodide Perovskite.

Science.gov (United States)

Yang, Jia-Yue; Hu, Ming

2017-08-17

The power conversion efficiency of hybrid halide perovskite solar cells is profoundly influenced by the operating temperature. Here we investigate the temperature influence on the electronic band structure and optical absorption of cubic CH 3 NH 3 PbI 3 from first-principles by accounting for both the electron-phonon interaction and thermal expansion. Within the framework of density functional perturbation theory, the electron-phonon coupling induces slightly enlarged band gap and strongly broadened electronic relaxation time as temperature increases. The large broadening effect is mainly due to the presence of cation organic atoms. Consequently, the temperature-dependent absorption peak exhibits blue-shift position, decreased amplitude, and broadened width. This work uncovers the atomistic origin of temperature influence on the optical absorption of cubic CH 3 NH 3 PbI 3 and can provide guidance to design high-performance hybrid halide perovskite solar cells at different operating temperatures.

Direct and indirect stabilisation mechanisms in multiple electron capture

Energy Technology Data Exchange (ETDEWEB)

Roncin, P. [Paris-11 Univ., 91 - Orsay (France). Lab. de Collisions Atomiques et Moleculaires; Barat, M. [Paris-11 Univ., 91 - Orsay (France). Lab. de Collisions Atomiques et Moleculaires; Gaboriaud, M.N. [Paris-11 Univ., 91 -Orsay (France). Lab. de Collisions Atomiques et Moleculaires; Szilagyi, Z.S. [Paris-11 Univ., 91 - Orsay (France). Lab. de Collisions Atomiques et Moleculaires; Kazansky, A.K. [Paris-11 Univ., 91 - Orsay (France). Lab. de Collisions Atomiques et Moleculaires

1995-05-01

During the last years both experimental and theoretical works have focused on the problem of the stabilisation of two excited electrons on the projectile. In this contribution we would like to give experimental examples of the two suggested mechanisms and their extension to multiple electron capture. Our data are discussed together with those obtained with other experimental techniques and with theoretical predictions. (orig./WL).

Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

Science.gov (United States)

Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

2018-05-01

Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

A Comprehensive Analysis of the Correlations between Resting-State Oscillations in Multiple-Frequency Bands and Big Five Traits.

Science.gov (United States)

Ikeda, Shigeyuki; Takeuchi, Hikaru; Taki, Yasuyuki; Nouchi, Rui; Yokoyama, Ryoichi; Kotozaki, Yuka; Nakagawa, Seishu; Sekiguchi, Atsushi; Iizuka, Kunio; Yamamoto, Yuki; Hanawa, Sugiko; Araki, Tsuyoshi; Miyauchi, Carlos Makoto; Sakaki, Kohei; Nozawa, Takayuki; Yokota, Susumu; Magistro, Daniele; Kawashima, Ryuta

2017-01-01

Recently, the association between human personality traits and resting-state brain activity has gained interest in neuroimaging studies. However, it remains unclear if Big Five personality traits are represented in frequency bands (~0.25 Hz) of resting-state functional magnetic resonance imaging (fMRI) activity. Based on earlier neurophysiological studies, we investigated the correlation between the five personality traits assessed by the NEO Five-Factor Inventory (NEO-FFI), and the fractional amplitude of low-frequency fluctuation (fALFF) at four distinct frequency bands (slow-5 (0.01-0.027 Hz), slow-4 (0.027-0.073 Hz), slow-3 (0.073-0.198 Hz) and slow-2 (0.198-0.25 Hz)). We enrolled 835 young subjects and calculated the correlations of resting-state fMRI signals using a multiple regression analysis. We found a significant and consistent correlation between fALFF and the personality trait of extraversion at all frequency bands. Furthermore, significant correlations were detected in distinct brain regions for each frequency band. This finding supports the frequency-specific spatial representations of personality traits as previously suggested. In conclusion, our data highlight an association between human personality traits and fALFF at four distinct frequency bands.

ELECTRONIC-STRUCTURE OF THE MISFIT-LAYER COMPOUND (SNS)(1.17)NBS2 DEDUCED FROM BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTRA

NARCIS (Netherlands)

FANG, CM; ETTEMA, ARHF; HAAS, C; WIEGERS, GA; VANLEUKEN, H; DEGROOT, RA

1995-01-01

In order to understand the electronic structure of the misfit-layer compound (SnS)(1.17)NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)(1.20)NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

Harvesting multiple electron-hole pairs generated through plasmonic excitation of Au nanoparticles.

Science.gov (United States)

Kim, Youngsoo; Smith, Jeremy G; Jain, Prashant K

2018-05-07

Multi-electron redox reactions, although central to artificial photosynthesis, are kinetically sluggish. Amidst the search for synthetic catalysts for such processes, plasmonic nanoparticles have been found to catalyse multi-electron reduction of CO 2 under visible light. This example motivates the need for a general, insight-driven framework for plasmonic catalysis of such multi-electron chemistry. Here, we elucidate the principles underlying the extraction of multiple redox equivalents from a plasmonic photocatalyst. We measure the kinetics of electron harvesting from a gold nanoparticle photocatalyst as a function of photon flux. Our measurements, supported by theoretical modelling, reveal a regime where two-electron transfer from the excited gold nanoparticle becomes prevalent. Multiple electron harvesting becomes possible under continuous-wave, visible-light excitation of moderate intensity due to strong interband transitions in gold and electron-hole separation accomplished using a hole scavenger. These insights will help expand the utility of plasmonic photocatalysis beyond CO 2 reduction to other challenging multi-electron, multi-proton transformations such as N 2 fixation.

Density changes in shear bands of a metallic glass determined by correlative analytical transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Rösner, Harald, E-mail: rosner@uni-muenster.de [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Peterlechner, Martin [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Kübel, Christian [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT), Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen (Germany); Schmidt, Vitalij [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Wilde, Gerhard [Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany); Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444 (China)

2014-07-01

Density changes between sheared zones and their surrounding amorphous matrix as a result of plastic deformation in a cold-rolled metallic glass (melt-spun Al{sub 88}Y{sub 7}Fe{sub 5}) were determined using high-angle annular dark-field (HAADF) detector intensities supplemented by electron-energy loss spectroscopy (EELS), energy-dispersive X-ray (EDX) and nano-beam diffraction analyses. Sheared zones or shear bands were observed as regions of bright or dark contrast arising from a higher or lower density relative to the matrix. Moreover, abrupt contrast changes from bright to dark and vice versa were found within individual shear bands. We associate the decrease in density mainly with an enhanced free volume in the shear bands and the increase in density with concomitant changes of the mass. This interpretation is further supported by changes in the zero loss and Plasmon signal originating from such sites. The limits of this new approach are discussed. - Highlights: • We describe a novel approach for measuring densities in shear bands of metallic glasses. • The linear relation of the dark-field intensity I/I{sub 0} and the mass thickness ρt was used. • Individual shear bands showed abrupt contrast changes from bright to dark and vice versa. • Density changes ranging from about −10% to +6% were found for such shear bands. • Mixtures of amorphous/medium range ordered domains were found within the shear bands.

Multi-band tight-binding calculation of electronic transport in Fe/trans-polyacetylene/Fe tunnel junctions

International Nuclear Information System (INIS)

Abedi Ravan, B

2012-01-01

In this paper, the electronic transport characteristics of Fe/trans-polyacetylene/Fe magnetic tunnel junctions (MTJs) are investigated using multi-band tight-binding calculations within the framework of nonequilibrium Green function theory. A CH 2 radical is added to different positions on the polymer chain and its effects on the tunnelling magnetoresistance of the MTJ are studied. The ferromagnetic electrodes are assumed to be single-band and their tight-binding parameters are chosen in such a way as to simulate the ab initio density functional calculations of the band structure of bcc-Fe along its [001] crystallographic direction. In building the Hamiltonian of the trans-polyacetylene (t-PA) chain, we have assumed an s orbital on the H atoms and one s and three p(p x ,p y ,p z ) orbitals on the C atoms, and the dimerization effects are taken into account. It is found that moving the radical out of the centre of the polymer chain enhances the tunnelling magnetoresistance of the MTJ.

Single-Band and Dual-Band Infrared Detectors

Science.gov (United States)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2017-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Brandt, Riley E., E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu; Lee, Yun Seog; Buonassisi, Tonio, E-mail: rbrandt@alum.mit.edu, E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Young, Matthew; Dameron, Arrelaine; Teeter, Glenn [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Park, Helen Hejin; Chua, Danny; Gordon, Roy G. [Harvard University, Cambridge, Massachusetts 02139 (United States)

2014-12-29

The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.

Determination of conduction and valence band electronic structure ...

Indian Academy of Sciences (India)

shifts in the rutile Ti d-band to lower energy with respect to anatase, i.e., ... requires excitation with UV light due to its wide band ... RIXS maps were compared to the theoretical results .... optical methods are insufficient, such as dark samples.

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

Science.gov (United States)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Multiple choice questions in electronics and electrical engineering

CERN Document Server

DAVIES, T J

2013-01-01

A unique compendium of over 2000 multiple choice questions for students of electronics and electrical engineering. This book is designed for the following City and Guilds courses: 2010, 2240, 2320, 2360. It can also be used as a resource for practice questions for any vocational course.

Electronic band structure of lithium, sodium and potassium fluorides

International Nuclear Information System (INIS)

Jouanin, C.; Albert, J.P.; Gout, C.

1975-01-01

A mixed tight-binding, pseudopotential method is proposed to calculate the energy band structure of large-gap crystals and is tested here on LiF, NaF and KF. Three-centre terms are included in the determination of the valence bands by the tight-binding method and for the conduction bands we use a pseudopotential model proposed by Bassani and Giuliano, modified for the positive ions. By taking into account the polarization corrections, transitions calculated from the energy band structures are compared with experimental data and the agreement is generally good

Multiple scattering effects on the Linear Depolarization Ratio (LDR) measured during CaPE by a Ka-band air-borne radar

Science.gov (United States)

Iguchi, Toshio; Meneghini, Robert

1993-01-01

Air-borne radar measurements of thunderstorms were made as part of the CaPE (Convection and Precipitation/Electrification) experiment in Florida in July 1991. The radar has two channels, X-band (10 GHz) and Ka-band (34.5 GHz), and is capable of measuring cross-polarized returns as well as co-polarized returns. In stratiform rain, the cross-polarized components can be observed only at the bright band region and from the surface reflection. The linear depolarization ratios (LDR's) measured at X-band and Ka-band at the bright band are nearly equal. In convective rain, however, the LDR in Ka-band often exceeds the X-band LDR by several dB, and sometimes by more than 10 dB, reaching LDR values of up to -5 dB over heavy convective rain. For randomly oriented hydrometeors, such high LDR values cannot be explained by single scattering from non-spherical scattering particles alone. Because the LDR by single backscatter depends weakly on the wavelength, the difference between the Ka-band and X-band LDR's suggests that multiple scattering effects prevail in the Ka-band LDR. In order to test this inference, the magnitude of the cross-polarized component created by double scattering was calculated using the parameters of the airborne radar, which for both frequencies has beamwidths of 5.1 degrees and pulse widths of 0.5 microsecond. Uniform rain beyond the range of 3 km is assumed.

Electronic computer prediction of properties of binary refractory transition metal compounds on the base of their simplificated electronic structure

International Nuclear Information System (INIS)

Kutolin, S.A.; Kotyukov, V.I.

1979-01-01

An attempt is made to obtain calculation equations of macroscopic physico-chemical properties of transition metal refractory compounds (density, melting temperature, Debye characteristic temperature, microhardness, standard formation enthalpy, thermo-emf) using the method of the regression analysis. Apart from the compound composition the argument of the regression equation is the distribution of electron bands of d-transition metals, created by the energy electron distribution in the simplified zone structure of transition metals and approximated by Chebishev polynoms, by the position of Fermi energy on the map of distribution of electron band energy depending upon the value of quasi-impulse, multiple to the first, second and third Brillouin zone for transition metals. The maximum relative error of the regressions obtained as compared with the literary data is 15-20 rel.%

Multiple scattering approach to the vibrational excitation of molecules by slow electrons

International Nuclear Information System (INIS)

Drukarev, G.

1976-01-01

Another approach to the problem of vibrational excitation of homonuclear two-atomic molecules by slow electrons possibly accompanied by rotational transitions is presented based on the picture of multiple scattering of an electron inside the molecule. The scattering of two fixed centers in the zero range potential model is considered. The results indicate that the multiple scattering determines the order of magnitude of the vibrational excitation cross sections in the energy region under consideration even if the zero range potential model is used. Also the connection between the multiple scattering approach and quasi-stationary molecular ion picture is established. 9 refs

Performance analysis for a chaos-based code-division multiple access system in wide-band channel

Directory of Open Access Journals (Sweden)

Ciprian Doru Giurcăneanu

2015-08-01

Full Text Available Code-division multiple access technology is widely used in telecommunications and its performance has been extensively investigated in the past. Theoretical results for the case of wide-band transmission channel were not available until recently. The novel formulae which have been published in 2014 can have an important impact on the future of wireless multiuser communications, but limitations come from the Gaussian approximations used in their derivation. In this Letter, the authors obtain more accurate expressions of the bit error rate (BER for the case when the model of the wide-band channel is two-ray, with Rayleigh fading. In the authors’ approach, the spreading sequences are assumed to be generated by logistic map given by Chebyshev polynomial function of order two. Their theoretical and experimental results show clearly that the previous results on BER, which rely on the crude Gaussian approximation, are over-pessimistic.

Multiple triaxial bands and abnormal signature inversion in 7433As

International Nuclear Information System (INIS)

Hu, Shi-Peng; Ma, Hai-Liang; Cao, Xue-Peng; Wu, Xiao-Guang; Zhang, Huan-Qiao; Hua, Hui; Sun, Jun-Jie; Sun, Hui-Bin; He, Chuang-Ye; Zheng, Yun; Li, Guang-Sheng; Li, Cong-Bo; Yao, Shun-He; Yu, Bei-Bei; Wang, Jin-Long; Li, Hong-We; Wu, Yi-Heng; Liu, Jia-Jian; Luo, Peng-Wei; Xu, Chuan

2014-01-01

Excited states of the odd–odd nucleus 74 As have been investigated via heavy ion fusion evaporation reaction 70 Zn( 7 Li,3n) 74 As at beam energy of 30 MeV. The properties of the positive- and the negative- parity bands can be interpreted in terms of the Cranked Nilsson–Strutinsky (CNS) model calculations which show that the observed bands are built on the triaxial deformed shape. The inversion of the favored and unfavored signature branches observed in the positive-parity bands presents at high spins rather than normal signature inversion occurs at low spins. This phenomenon may be explained as the origin of unpaired band crossing in a highly rotating triaxial nucleus.

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Optical model with multiple band couplings using soft rotator structure

Science.gov (United States)

Martyanov, Dmitry; Soukhovitskii, Efrem; Capote, Roberto; Quesada, Jose Manuel; Chiba, Satoshi

2017-09-01

A new dispersive coupled-channel optical model (DCCOM) is derived that describes nucleon scattering on 238U and 232Th targets using a soft-rotator-model (SRM) description of the collective levels of the target nucleus. SRM Hamiltonian parameters are adjusted to the observed collective levels of the target nucleus. SRM nuclear wave functions (mixed in K quantum number) have been used to calculate coupling matrix elements of the generalized optical model. Five rotational bands are coupled: the ground-state band, β-, γ-, non-axial- bands, and a negative parity band. Such coupling scheme includes almost all levels below 1.2 MeV of excitation energy of targets. The "effective" deformations that define inter-band couplings are derived from SRM Hamiltonian parameters. Conservation of nuclear volume is enforced by introducing a monopolar deformed potential leading to additional couplings between rotational bands. The present DCCOM describes the total cross section differences between 238U and 232Th targets within experimental uncertainty from 50 keV up to 200 MeV of neutron incident energy. SRM couplings and volume conservation allow a precise calculation of the compound-nucleus (CN) formation cross sections, which is significantly different from the one calculated with rigid-rotor potentials with any number of coupled levels.

Indium oxide—a transparent, wide-band gap semiconductor for (opto)electronic applications

International Nuclear Information System (INIS)

Bierwagen, Oliver

2015-01-01

The present review takes a semiconductor physics perspective to summarize the state-of-the art of In 2 O 3 in relation to applications. After discussing conventional and novel applications, the crystal structure, synthesis of single-crystalline material, band-structure and optical transparency are briefly introduced before focussing on the charge carrier transport properties. The issues of unintentional n-type conductivity and its likely causes, the surface electron accumulation, and the lack of p-type conductivity will be presented. Intentional doping will be demonstrated to control the electron concentration and resistivity over a wide range, but is also subject to compensation. The control of the surface accumulation in relation to Schottky and ohmic contacts will be demonstrated. In the context of scattering mechanisms, the electron mobility and its limits will be discussed. Finally, the Seebeck coefficient and its significance will be shown, and ferromagnetic doping of In 2 O 3 will be critically discussed. With this overview most if not all ingredients for the use of In 2 O 3 as semiconductor material in novel or improved conventional devices will be given. (invited review)

A Comprehensive Analysis of the Correlations between Resting-State Oscillations in Multiple-Frequency Bands and Big Five Traits

Directory of Open Access Journals (Sweden)

Shigeyuki Ikeda

2017-06-01

Full Text Available Recently, the association between human personality traits and resting-state brain activity has gained interest in neuroimaging studies. However, it remains unclear if Big Five personality traits are represented in frequency bands (~0.25 Hz of resting-state functional magnetic resonance imaging (fMRI activity. Based on earlier neurophysiological studies, we investigated the correlation between the five personality traits assessed by the NEO Five-Factor Inventory (NEO-FFI, and the fractional amplitude of low-frequency fluctuation (fALFF at four distinct frequency bands (slow-5 (0.01–0.027 Hz, slow-4 (0.027–0.073 Hz, slow-3 (0.073–0.198 Hz and slow-2 (0.198–0.25 Hz. We enrolled 835 young subjects and calculated the correlations of resting-state fMRI signals using a multiple regression analysis. We found a significant and consistent correlation between fALFF and the personality trait of extraversion at all frequency bands. Furthermore, significant correlations were detected in distinct brain regions for each frequency band. This finding supports the frequency-specific spatial representations of personality traits as previously suggested. In conclusion, our data highlight an association between human personality traits and fALFF at four distinct frequency bands.

MM-wave emission by magnetized plasma during sub-relativistic electron beam relaxation

Energy Technology Data Exchange (ETDEWEB)

Ivanov, I. A., E-mail: Ivanov@inp.nsk.su; Arzhannikov, A. V.; Burmasov, V. S.; Popov, S. S.; Postupaev, V. V.; Sklyarov, V. F.; Vyacheslavov, L. N. [Budker Institute of Nuclear Physics, 11 Lavrentjev Avenue, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Street, Novosibirsk 630090 (Russian Federation); Burdakov, A. V.; Sorokina, N. V. [Budker Institute of Nuclear Physics, 11 Lavrentjev Avenue, Novosibirsk 630090 (Russian Federation); Novosibirsk State Technical University, 20 Karl Marx Avenue, Novosibirsk 630092 (Russian Federation); Gavrilenko, D. E.; Kasatov, A. A.; Kandaurov, I. V.; Mekler, K. I.; Rovenskikh, A. F.; Trunev, Yu. A. [Budker Institute of Nuclear Physics, 11 Lavrentjev Avenue, Novosibirsk 630090 (Russian Federation); Kurkuchekov, V. V.; Kuznetsov, S. A. [Novosibirsk State University, 2 Pirogova Street, Novosibirsk 630090 (Russian Federation); Polosatkin, S. V. [Budker Institute of Nuclear Physics, 11 Lavrentjev Avenue, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, 2 Pirogova Street, Novosibirsk 630090 (Russian Federation); Novosibirsk State Technical University, 20 Karl Marx Avenue, Novosibirsk 630092 (Russian Federation)

2015-12-15

There are described electromagnetic spectra of radiation emitted by magnetized plasma during sub-relativistic electron beam in a double plasma frequency band. Experimental studies were performed at the multiple-mirror trap GOL-3. The electron beam had the following parameters: 70–110 keV for the electron energy, 1–10 MW for the beam power and 30–300 μs for its duration. The spectrum was measured in 75–230 GHz frequency band. The frequency of the emission follows variations in electron plasma density and magnetic field strength. The specific emission power on the length of the plasma column is estimated on the level 0.75 kW/cm.

Nanoscale measurements of unoccupied band dispersion in few-layer graphene.

Science.gov (United States)

Jobst, Johannes; Kautz, Jaap; Geelen, Daniël; Tromp, Rudolf M; van der Molen, Sense Jan

2015-11-26

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only.

Electronic transport properties of Ti-impurity band in Si

Energy Technology Data Exchange (ETDEWEB)

Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I [Departamento de Fisica Aplicada III (Electricidad y Electronica), Facultad de Ciencias, Fisicas, Universidad Complutense, E-28040 Madrid (Spain)

2009-04-21

In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

Electronic transport properties of Ti-impurity band in Si

International Nuclear Information System (INIS)

Olea, J; Gonzalez-Diaz, G; Pastor, D; Martil, I

2009-01-01

In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

Science.gov (United States)

Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

2015-04-01

High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

Doubly differential single and multiple ionization of krypton by electron impact

International Nuclear Information System (INIS)

Lucio, O. G. de; Gavin, J.; DuBois, R. D.

2007-01-01

Differential measurements for single and multiple ionization of Kr by 240 and 500 eV electron impact are presented. Using a pulsed extraction field, Kr + , Kr 2+ , and Kr 3+ ions were measured in coincidence with scattered electrons for energy losses up to 120 eV and scattering angles between 16 degree sign and 90 degree sign . Scaling properties of the doubly differential cross sections (DDCS) are investigated as a function of energy loss, scattering angle, and momentum transfer. It is shown that scaling the DDCS as outlined by Kim and Inokuti and plotting them versus a parameter consisting of the momentum transfer divided by the square root of the impact energy times 1-cos(θ), where θ is the scattering angle, yielded similar curves, but with different magnitudes, for single and multiple ionization. Normalizing these curves together produced two universal curves, one appropriate for single and multiple electron emission at larger scattering angles (θ≥30 degree sign ) and one appropriate for small scattering angles (θ<30 degree sign )

Observations of Multi-band Structures in Double Star TC-1 PEACE Electron and HIA Ion Data

Science.gov (United States)

Mohan Narasimhan, K.; Fazakerley, A. N.; Grimald, S.; Dandouras, I. S.; Mihaljcic, B.; Kistler, L. M.; Owen, C. J.

2015-12-01

Several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range 1 - 25 keV (Smith and Hoffman (1974), etc). These structures have been described as "nose structures", with reference to their appearance in energy-time spectrograms and are also known as "bands" if they occur for extended periods of time. Multi-nose structures have been observed if 2 or more noses appear at the same time (Vallat et al., 2007). Gaps between "noses" (or "bands") have been explained in terms of the competing corotation, convection and magnetic gradient drifts. Charge exchange losses in slow drift paths for steady state scenarios and the role of substorm injections have also been considered (Li et al., 2000; Ebihara et al., 2004). We analyse observations of electron and ion multi-band structures frequently seen in Double-Star TC1 PEACE and HIA data. We present results from statistical surveys conducted using data from the duration of the mission. Furthermore, using a combination of both statistics and simulations, we test previous theories as to possible formation mechanisms and explore other possible explanations.

Influence of energy band alignment in mixed crystalline TiO2 nanotube arrays: good for photocatalysis, bad for electron transfer

Science.gov (United States)

Mohammadpour, Raheleh

2017-12-01

Despite the wide application ranges of TiO2, the precise explanation of the charge transport dynamic through a mixed crystal phase of this semiconductor has remained elusive. Here, in this research, mixed-phase TiO2 nanotube arrays (TNTAs) consisting of anatase and 0-15% rutile phases has been formed through various annealing processes and employed as a photoelectrode of a photovoltaic cell. Wide ranges of optoelectronic experiments have been employed to explore the band alignment position, as well as the depth and density of trap states in TNTAs. Short circuit potential, as well as open circuit potential measurements specified that the band alignment of more than 0.2 eV exists between the anatase and rutile phase Fermi levels, with a higher electron affinity for anatase; this can result in a potential barrier in crystallite interfaces and the deterioration of electron mobility through mixed phase structures. Moreover, a higher density of shallow localized trap states below the conduction band with more depth (133 meV in anatase to 247 meV in 15% rutile phase) and also deep oxygen vacancy traps have been explored upon introducing the rutile phase. Based on our results, employing TiO2 nanotubes as just the electron transport medium in mixed crystalline phases can deteriorate the charge transport mechanism, however, in photocatalytic applications when both electrons and holes are present, a robust charge separation in crystalline anatase/rutile interphases will result in better performances.

Electrons in feldspar II: A consideration of the influence of conduction band-tail states on luminescence processes

DEFF Research Database (Denmark)

Poolton, H.R.J.; Ozanyan, K.B.; Wallinga, J.

2002-01-01

consider what influence the band tails have on the luminescence properties of feldspar, where electrons travel through the sample prior to recombination. The work highlights the dominant role that 0.04-0.05-eV phonons play in both the luminescence excitation and emission processes of these materials...

Real-Time Observation of Ultrafast Intraband Relaxation and Exciton Multiplication in PbS Quantum Dots

KAUST Repository

El-Ballouli, Ala’a O.

2014-03-19

We examine ultrafast intraconduction band relaxation and multiple-exciton generation (MEG) in PbS quantum dots (QDs) using transient absorption spectroscopy with 120 fs temporal resolution. The intraconduction band relaxation can be directly and excellently resolved spectrally and temporally by applying broadband pump-probe spectroscopy to excite and detect the wavelengths around the exciton absorption peak, which is located in the near-infrared region. The time-resolved data unambiguously demonstrate that the intraband relaxation time progressively increases as the pump-photon energy increases. Moreover, the relaxation time becomes much shorter as the size of the QDs decreases, indicating the crucial role of spatial confinement in the intraband relaxation process. Additionally, our results reveal the systematic scaling of the intraband relaxation time with both excess energy above the effective energy band gap and QD size. We also assess MEG in different sizes of the QDs. Under the condition of high-energy photon excitation, which is well above the MEG energy threshold, ultrafast bleach recovery due to the nonradiative Auger recombination of the multiple electron-hole pairs provides conclusive experimental evidence for the presence of MEG. For instance, we achieved quantum efficiencies of 159, 129 and 106% per single-absorbed photon at pump photoexcition of three times the band gap for QDs with band gaps of 880 nm (1.41 eV), 1000 nm (1.24 eV) and 1210 nm (1.0 eV), respectively. These findings demonstrate clearly that the efficiency of transferring excess photon energy to carrier multiplication is significantly increased in smaller QDs compared with larger ones. Finally, we discuss the Auger recombination dynamics of the multiple electron-hole pairs as a function of QD size.

Continuum and bound electronic wavefunctions for anisotropic multiple-scattering potentials

International Nuclear Information System (INIS)

Siegel, J.; Dill, D.; Dehmer, J.L.

1975-01-01

Standard multiple-scattering treatments of bound and continuum one-electron states are restricted to a monopole potential in each of the various spherical regions. We have extended the treatment within these regions to a general potential. The corresponding multiple-scattering equations should facilitate accurate treatment of effects of the build-up of charge due to bonding, of the dipole character of polar molecules, and of external fields

Experimental studies of narrow band effects in the actinides

Energy Technology Data Exchange (ETDEWEB)

Brodsky, M.B.

1976-01-01

In many actinide metallic systems the f-electrons exhibit band behavior. This is a consequence of direct f-f wave function overlap or hybridization of f-electrons with s-, p-, and d-electrons. The f-bands can be responsible for large electronic densities of states at the Fermi level which may lead to band magnetism of various types. Although the concept of valence instabilities must be approached cautiously especially in the light actinides, it would not be surprising to observe them in the future, especially in Am compounds.

Experimental studies of narrow band effects in the actinides

International Nuclear Information System (INIS)

Brodsky, M.B.

1976-01-01

In many actinide metallic systems the f-electrons exhibit band behavior. This is a consequence of direct f-f wave function overlap or hybridization of f-electrons with s-, p-, and d-electrons. The f-bands can be responsible for large electronic densities of states at the Fermi level which may lead to band magnetism of various types. Although the concept of valence instabilities must be approached cautiously especially in the light actinides, it would not be surprising to observe them in the future, especially in Am compounds

Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

Czech Academy of Sciences Publication Activity Database

Yadav, S.K.; Uberuaga, B.P.; Nikl, Martin; Jiang, C.; Stanek, C.R.

2015-01-01

Roč. 4, č. 5 (2015), "054012-1"-"054012-9" ISSN 2331-7019 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * electronic band gap structure * garnets * band gap engineering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.061, year: 2015

FDTD method for computing the off-plane band structure in a two-dimensional photonic crystal consisting of nearly free-electron metals

Energy Technology Data Exchange (ETDEWEB)

Xiao Sanshui; He Sailing

2002-12-01

An FDTD numerical method for computing the off-plane band structure of a two-dimensional photonic crystal consisting of nearly free-electron metals is presented. The method requires only a two-dimensional discretization mesh for a given off-plane wave number k{sub z} although the off-plane propagation is a three-dimensional problem. The off-plane band structures of a square lattice of metallic rods with the high-frequency metallic model in the air are studied, and a complete band gap for some nonzero off-plane wave number k{sub z} is founded.

FDTD method for computing the off-plane band structure in a two-dimensional photonic crystal consisting of nearly free-electron metals

International Nuclear Information System (INIS)

Xiao Sanshui; He Sailing

2002-01-01

An FDTD numerical method for computing the off-plane band structure of a two-dimensional photonic crystal consisting of nearly free-electron metals is presented. The method requires only a two-dimensional discretization mesh for a given off-plane wave number k z although the off-plane propagation is a three-dimensional problem. The off-plane band structures of a square lattice of metallic rods with the high-frequency metallic model in the air are studied, and a complete band gap for some nonzero off-plane wave number k z is founded

Band-selective filter in a zigzag graphene nanoribbon.

Science.gov (United States)

Nakabayashi, Jun; Yamamoto, Daisuke; Kurihara, Susumu

2009-02-13

Electric transport of a zigzag graphene nanoribbon through a steplike potential and a barrier potential is investigated by using the recursive Green's function method. In the case of the steplike potential, we demonstrate numerically that scattering processes obey a selection rule for the band indices when the number of zigzag chains is even; the electrons belonging to the "even" ("odd") bands are scattered only into the even (odd) bands so that the parity of the wave functions is preserved. In the case of the barrier potential, by tuning the barrier height to be an appropriate value, we show that it can work as the "band-selective filter", which transmits electrons selectively with respect to the indices of the bands to which the incident electrons belong. Finally, we suggest that this selection rule can be observed in the conductance by applying two barrier potentials.

Statistics of electron multiplication in a multiplier phototube; Iterative method; Estadistica de la multiplicacion de electrones en un fotomultiplicador: Metodos iterativos

Energy Technology Data Exchange (ETDEWEB)

Ortiz, J F; Grau, A

1985-07-01

In the present paper an iterative method is applied to study the variation of dynode response in the multiplier phototube. Three different situation are considered that correspond to the following ways of electronic incidence on the first dynode: incidence of exactly one electron, incidence of exactly r electrons and incidence of an average r electrons. The responses are given for a number of steps between 1 and 5, and for values of the multiplication factor of 2.1, 2.5, 3 and 5. We study also the variance, the skewness and the excess of jurtosis for different multiplication factors. (Author) 11 refs.

Concept Design of a Multi-Band Shared Aperture Reflectarray/Reflector Antenna

Science.gov (United States)

Spence, Thomas; Cooley, Michael; Stenger, Peter; Park, Richard; Li, Lihua; Racette, Paul; Heymsfield, Gerald; Mclinden, Matthew

2016-01-01

A scalable dual-band (KaW) shared-aperture antenna system design has been developed as a proposed solution to meet the needs of the planned NASA Earth Science Aerosol, Clouds, and Ecosystem (ACE) mission. The design is comprised of a compact Cassegrain reflector/reflectarray with a fixed pointing W-band feed and a cross track scanned Ka-band Active Electronically Scanned Array (AESA). Critical Sub-scale prototype testing and flight tests have validated some of the key aspects of this innovative antenna design, including the low loss reflector/reflectarray surface.More recently the science community has expressed interest in a mission that offers the ability to measure precipitation in addition to clouds and aerosols. In this paper we present summaries of multiple designs that explore options for realizing a tri-frequency (KuKaW), shared-aperture antenna system to meet these science objectives. Design considerations include meeting performance requirements while emphasizing payload size, weight, prime power, and cost. The extensive trades and lessons learned from our previous dual-band ACE system development were utilized as the foundation for this work.

Damping effect of the inner band electrons on the optical absorption and bandwidth of metal nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ochoo, Lawrence, E-mail: lawijapuonj@yahoo.com; Migwi, Charles; Okumu, John [Kenyatta University, Physics Department (Kenya)

2012-12-15

Conflicts and discrepancies around nanoparticle (NP) size effect on the optical properties of metal NPs of sizes below the mean free path of electron can be traced to the internal damping effect of the hybrid resonance of the inner band (IB) and the conduction band (CB) electrons of the noble metals. We present a scheme to show how alternative mathematical formulation of the physics of interaction between the CB and the IB electrons of NP sizes <50 nm justifies this and resolves the conflicts. While a number of controversies exist between classical and quantum theories over the phenomenological factors to attribute to the NP size effect on the absorption bandwidth, this article shows that the bandwidth behavior can be well predicted from a different treatment of the IB damping effect, without invoking any of the controversial phenomenological factors. It finds that the IB damping effect is mainly frequency dependent and only partly size dependent and shows how its influence on the surface plasmon resonance can be modeled to show the influence of NP size on the absorption properties. Through the model, it is revealed that strong coupling of IB and CB electrons drastically alters the absorption spectra, splitting it into distinctive dipole and quadrupole modes and even introduce a behavioral switch. It finds a strong overlap between the IB and the CB absorptions for Au and Cu but not Ag, which is sensitive to the NP environment. The CB modes shift with the changing refractive index of the medium in a way that can allow their independent excitation, free of influence of the IB electrons. Through a hybrid of parameters, the model further finds that metal NP sizes can be established not only by their spectral absorption peak locations but also from a proper correlation of the peak location and the bandwidth (FWHM).

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

Energy Technology Data Exchange (ETDEWEB)

Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

2016-09-01

We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.

Transport in bilayer and trilayer graphene: band gap engineering and band structure tuning

Science.gov (United States)

Zhu, Jun

2014-03-01

Controlling the stacking order of atomically thin 2D materials offers a powerful tool to control their properties. Linearly dispersed bands become hyperbolic in Bernal (AB) stacked bilayer graphene (BLG). Both Bernal (ABA) and rhombohedral (ABC) stacking occur in trilayer graphene (TLG), producing distinct band structures and electronic properties. A symmetry-breaking electric field perpendicular to the sample plane can further modify the band structures of BLG and TLG. In this talk, I will describe our experimental effort in these directions using dual-gated devices. Using thin HfO2 film deposited by ALD as gate dielectric, we are able to apply large displacement fields D > 6 V/nm and observe the opening and saturation of the field-induced band gap Eg in bilayer and ABC-stacked trilayer graphene, where the conduction in the mid gap changes by more than six decades. Its field and temperature dependence highlights the crucial role played by Coulomb disorder in facilitating hopping conduction and suppressing the effect of Eg in the tens of meV regime. In contrast, mid-gap conduction decreases with increasing D much more rapidly in clean h-BN dual-gated devices. Our studies also show the evolution of the band structure in ABA-stacked TLG, in particular the splitting of the Dirac-like bands in large D field and the signatures of two-band transport at high carrier densities. Comparison to theory reveals the need for more sophisticated treatment of electronic screening beyond self-consistent Hartree calculations to accurately predict the band structures of trilayer graphene and graphenic materials in general.

Analysis of the Electronic Crosstalk Effect in Terra MODIS Long-Wave Infrared Photovoltaic Bands Using Lunar Images

Science.gov (United States)

Wilson, Truman; Wu, Aisheng; Wang, Zhipeng; Xiong, Xiaoxiong

2016-01-01

The Moderate Resolution Imaging Spectroradiometer (MODIS) is one of the key sensors among the suite of remote sensing instruments on board the Earth Observing System Terra and Aqua spacecrafts. For each MODIS spectral band, the sensor degradation has been measured using a set of on-board calibrators. MODIS also uses lunar observations from nearly monthly spacecraft maneuvers, which bring the Moon into view through the space-view port, helping to characterize the scan mirror degradation at a different angles of incidence. Throughout the Terra mission, contamination of the long-wave infrared photovoltaic band (LWIR PV, bands 27-30) signals has been observed in the form of electronic crosstalk, where signal from each of the detectors among the LWIR PV bands can leak to the other detectors, producing a false signal contribution. This contamination has had a noticeable effect on the MODIS science products since 2010 for band 27, and since 2012 for bands 28 and 29. Images of the Moon have been used effectively for determining the contaminating bands, and have also been used to derive correction coefficients for the crosstalk contamination. In this paper, we introduce an updated technique for characterizing the crosstalk contamination among the LWIR PV bands using data from lunar calibration events. This approach takes into account both the in-band and out-of-band contribution to the signal contamination for each detector in bands 27-30, which is not considered in previous works. The crosstalk coefficients can be derived for each lunar calibration event, providing the time dependence of the crosstalk contamination. Application of these coefficients to Earth-view image data results in a significant reduction in image contamination and a correction of the scene radiance for bands 27- 30. Also, this correction shows a significant improvement to certain threshold tests in the MODIS Level-2 Cloud Mask. In this paper, we will detail the methodology used to identify and correct

Electronic structure of the misfit-layer compound (SnS)1.17NbS2 deduced from band-structure calculations and photoelectron spectra

NARCIS (Netherlands)

Fang, C.M.; Ettema, A.R.H.F.; Haas, C.; Wiegers, G.A.; Leuken, H. van; Groot, R.A. de

1995-01-01

In order to understand the electronic structure of the misfit-layer compound (SnS)1.17NbS2 we carried out an ab initio band-structure calculation of the closely related commensurate compound (SnS)1.20NbS2. The band structure is compared with calculations for NbS2 and for hypothetical SnS with

S-band linac-based X-ray source with {pi}/2-mode electron linac

Energy Technology Data Exchange (ETDEWEB)

Deshpande, Abhay, E-mail: abhay@post.kek.jp [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Araki, Sakae [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Dixit, Tanuja [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Fukuda, Masafumi [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Krishnan, R; Pethe, Sanjay [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Sakaue, Kazuyuki [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan); Terunuma, Nobuhiro; Urakawa, Junji [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Washio, Masakazu [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan)

2011-05-01

The activities with the compact X-ray source are attracting more attention, particularly for the applications of the source in medical fields. We propose the fabrication of a compact X-ray source using the SAMEER electron linear accelerator and the KEK laser undulator X-ray source (LUCX) technologies. The linac developed at SAMEER is a standing wave side-coupled S-band linac operating in the {pi}/2 mode. In the proposed system, a photocathode RF gun will inject bunches of electrons in the linac to accelerate and achieve a high-energy, low-emittance beam. This beam will then interact with the laser in the laser cavity to produce X-rays of a type well suited for various applications. The side-coupled structure will make the system more compact, and the {pi}/2 mode of operation will enable a high repetition rate operation, which will help to increase the X-ray yield.

Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β -Ga2O3

Science.gov (United States)

Mock, Alyssa; Korlacki, Rafał; Briley, Chad; Darakchieva, Vanya; Monemar, Bo; Kumagai, Yoshinao; Goto, Ken; Higashiwaki, Masataka; Schubert, Mathias

2017-12-01

We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β -Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75-9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition.

Design and analysis of X-band femtosecond linac

Energy Technology Data Exchange (ETDEWEB)

Uesaka, M; Kozawa, T; Takeshita, A; Kobayashi, T; Ueda, T; Miya, K [Tokyo Univ., Tokai, Ibaraki (Japan). Nuclear Engineering Research Lab.

1997-03-01

Femtosecond quantum phenomena research project is proposed at Nuclear Engineering Research Laboratory, University of Tokyo. The research facility consists of an X-band (11.424GHz) femtosecond electron linac, a femtosecond wavelength tunable laser, two S-band (2.856GHz) picosecond electron linacs and measuring equipments. Especially, we aim to generate a 100 fs (FWHM) electron single bunch with more than 1 nC at the X-band femtosecond linac. Ultrafast processes in radiation physics, chemistry, material science and microscopic electromagnetic phenomena are going to be analyzed there. Here the design and analysis of an X-band femtosecond linac is presented. The simulation of electron dynamics is carried out including magnetic pulse compression by using PARMELA and SUPERFISH. It is found by the simulation that the 600 ps (tail-to-tail) electron emission from a 200 kV thermionic gun can be bunched and compressed to 110 fs (FWHM) with the charge of 0.8 nC which gives 7.3 kA. We plan to use one high power X-band klystron which can supply 60 MW with more than 200 ns pulse duration. The flatness of plateau of the pulse should be 0.2% for stable ultrashort bunch generation. (author)

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Science.gov (United States)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Stability of the split-band solution and energy gap in the narrow-band region of the Hubbard model

International Nuclear Information System (INIS)

Arai, T.; Cohen, M.H.

1980-01-01

By inserting quasielectron energies ω calculated from the fully renormalized Green's function of the Hubbard model obtained in the preceding paper into the exact expression of Galitskii and Migdal, the ground-state energy, the chemical potential, and the dynamic- and thermodynamic-stability conditions are calculated in the narrow-band region. The results show that as long as the interaction energy I is finite, electrons in the narrow-band region do not obey the Landau theory of Fermi liquids, and a gap appears between the lowest quasielectron energy ω and the chemical potential μ for any occupation n, regardless of whether the lower band is exactly filled or not. This unusual behavior is possible because, when an electron is added to the system of N electrons, the whole system relaxes due to the strong interaction, introducing a relaxation energy difference between the two quantities. We also show that all previous solutions which exhibit the split-band structure, including Hubbard's work, yield the same conclusion that electrons do not behave like Landau quasiparticles. However, the energy gap is calculated to be negative at least for some occupations n, demonstrating the dynamic instability of those solutions. They also exhibit thermodynamic instability for certain occupations, while the fully renormalized solution, having sufficient electron correlations built in, satisfies the dynamic and thermodynamic stability conditions for all occupations. When the lower band is nearly filled, the nature of the solution is shown to change, making the coherent motion of electrons with fixed k values more difficult. In the pathological limit where I=infinity, however, the gap vanishes, yielding a metallic state

Electronic structure of alloys

International Nuclear Information System (INIS)

Ehrenreich, H.; Schwartz, L.M.

1976-01-01

The description of electronic properties of binary substitutional alloys within the single particle approximation is reviewed. Emphasis is placed on a didactic exposition of the equilibrium properties of the transport and magnetic properties of such alloys. Topics covered include: multiple scattering theory; the single band alloy; formal extensions of the theory; the alloy potential; realistic model state densities; the s-d model; and the muffin tin model. 43 figures, 3 tables, 151 references

From the Kohn-Sham band gap to the fundamental gap in solids. An integer electron approach.

Science.gov (United States)

Baerends, E J

2017-06-21

It is often stated that the Kohn-Sham occupied-unoccupied gap in both molecules and solids is "wrong". We argue that this is not a correct statement. The KS theory does not allow to interpret the exact KS HOMO-LUMO gap as the fundamental gap (difference (I - A) of electron affinity (A) and ionization energy (I), twice the chemical hardness), from which it indeed differs, strongly in molecules and moderately in solids. The exact Kohn-Sham HOMO-LUMO gap in molecules is much below the fundamental gap and very close to the much smaller optical gap (first excitation energy), and LDA/GGA yield very similar gaps. In solids the situation is different: the excitation energy to delocalized excited states and the fundamental gap (I - A) are very similar, not so disparate as in molecules. Again the Kohn-Sham and LDA/GGA band gaps do not represent (I - A) but are significantly smaller. However, the special properties of an extended system like a solid make it very easy to calculate the fundamental gap from the ground state (neutral system) band structure calculations entirely within a density functional framework. The correction Δ from the KS gap to the fundamental gap originates from the response part v resp of the exchange-correlation potential and can be calculated very simply using an approximation to v resp . This affords a calculation of the fundamental gap at the same level of accuracy as other properties of crystals at little extra cost beyond the ground state bandstructure calculation. The method is based on integer electron systems, fractional electron systems (an ensemble of N- and (N + 1)-electron systems) and the derivative discontinuity are not invoked.

A new apparatus for electron-ion multiple coincidence momentum imaging spectroscopy

International Nuclear Information System (INIS)

Morishita, Y.; Kato, M.; Pruemper, G.; Liu, X.-J.; Lischke, T.; Ueda, K.; Tamenori, Y.; Oura, M.; Yamaoka, H.; Suzuki, I.H.; Saito, N.

2006-01-01

We have developed a new experimental apparatus for the electron-ion multiple coincidence momentum imaging spectroscopy in order to obtain the angular distributions of vibration-resolved photoelectrons from molecules fixed in space. The apparatus consists of a four-stage molecular supersonic jet and a spectrometer analyzing three-dimensional momenta of fragment ions and electrons in coincidence

Multiple scattering and stop band characteristics of flexural waves on a thin plate with circular holes

Science.gov (United States)

Wang, Zuowei; Biwa, Shiro

2018-03-01

A numerical procedure is proposed for the multiple scattering analysis of flexural waves on a thin plate with circular holes based on the Kirchhoff plate theory. The numerical procedure utilizes the wave function expansion of the exciting as well as scattered fields, and the boundary conditions at the periphery of holes are incorporated as the relations between the expansion coefficients of exciting and scattered fields. A set of linear algebraic equations with respect to the wave expansion coefficients of the exciting field alone is established by the numerical collocation method. To demonstrate the applicability of the procedure, the stop band characteristics of flexural waves are analyzed for different arrangements and concentrations of circular holes on a steel plate. The energy transmission spectra of flexural waves are shown to capture the detailed features of the stop band formation of regular and random arrangements of holes. The increase of the concentration of holes is found to shift the dips of the energy transmission spectra toward higher frequencies as well as deepen them. The hexagonal hole arrangement can form a much broader stop band than the square hole arrangement for flexural wave transmission. It is also demonstrated that random arrangements of holes make the transmission spectrum more complicated.

Photoelectron spectroscopy and Auger electron spectroscopy of solids and surfaces

International Nuclear Information System (INIS)

Kowalczyk, S.P.

1976-01-01

The use of photoelectron spectroscopy, primarily x-ray photoelectron spectroscopy, to obtain information on the electronic structure of a wide variety of solids (especially the bulk electronic structure of solids) is covered. Both valence band and core-level spectra, as well as a few cases of photon excited Auger electron spectroscopy, are employed in the investigations to derive information on N(E). The effect of several modulations inherent in the measured I(E)'s, such as final state band structure, cross section, and relaxation, is discussed. Examples of many-electron interactions in PES are given. Some experimental aspects of PES and AES studies are given with emphasis on sample preparation techniques. Multiple splitting of core levels is examined using the Mn levels in MnF 2 as a detailed case study. Core level splittings in transition metals, rare earth metals, transition metal halides and several alloys are also reported. The application of PES to the study of the chemical bond in some crystalline semiconductors and insulators, A/sup N/B/sup 8-N/ and A/sup N/B/sup 10-N/ compounds is treated, and a spectroscopic scale of ionicity for these compounds is developed from the measured ''s-band'' splitting in the valence band density of states

A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides.

Science.gov (United States)

Linderälv, Christopher; Lindman, Anders; Erhart, Paul

2018-01-04

Wide band gap oxides are versatile materials with numerous applications in research and technology. Many properties of these materials are intimately related to defects, with the most important defect being the oxygen vacancy. Here, using electronic structure calculations, we show that the charge transition level (CTL) and eigenstates associated with oxygen vacancies, which to a large extent determine their electronic properties, are confined to a rather narrow energy range, even while band gap and the electronic structure of the conduction band vary substantially. Vacancies are classified according to their character (deep versus shallow), which shows that the alignment of electronic eigenenergies and CTL can be understood in terms of the transition between cavity-like localized levels in the large band gap limit and strong coupling between conduction band and vacancy states for small to medium band gaps. We consider both conventional and hybrid functionals and demonstrate that the former yields results in very good agreement with the latter provided that band edge alignment is taken into account.

Communication: electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations.

Science.gov (United States)

Umari, P; Petrenko, O; Taioli, S; De Souza, M M

2012-05-14

Electronic band gaps for optically allowed transitions are calculated for a series of semiconducting single-walled zig-zag carbon nanotubes of increasing diameter within the many-body perturbation theory GW method. The dependence of the evaluated gaps with respect to tube diameters is then compared with those found from previous experimental data for optical gaps combined with theoretical estimations of exciton binding energies. We find that our GW gaps confirm the behavior inferred from experiment. The relationship between the electronic gap and the diameter extrapolated from the GW values is also in excellent agreement with a direct measurement recently performed through scanning tunneling spectroscopy.

Hole energy and momentum distributions in valence bands

International Nuclear Information System (INIS)

Laan, G. van der.

1982-01-01

In order to understand the electrical and magnetic properties of solids, the knowledge of the density of states and the dispersion relation of the valence bands is indispensable. This thesis offers some alternative methods to obtain information about the nature of the valence band. Part A deals with the energy distribution of the photoelectrons. A simple model, which explains the core hole satellite structure in compounds with large correlation effects between the valence band holes and the created photo-hole, is outlined. CuCl, CuX 2 (X = F Cl and Br) are studied, by photoemission and Auger electron spectroscopies in determining the valence band properties. Part B deals with the simultaneous measurement of the energy and the wave vector of the emitted electrons. A practical example is given for the determination of the dispersion relation in copper. The measurements of a surface resonance band and the distribution of the secondary electrons are also reported. (Auth.)

Band structure analysis in SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

2012-06-05

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Band structure analysis in SiGe nanowires

International Nuclear Information System (INIS)

Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

2012-01-01

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

First principles electronic band structure and phonon dispersion curves for zinc blend beryllium chalcogenide

Energy Technology Data Exchange (ETDEWEB)

Dabhi, Shweta, E-mail: venu.mankad@gmail.com; Mankad, Venu, E-mail: venu.mankad@gmail.com; Jha, Prafulla K., E-mail: venu.mankad@gmail.com [Department of Physics, Maharaja Krishnakumasinhji Bhavnagar University, Bhavnagar-364001 (India)

2014-04-24

A detailed theoretical study of structural, electronic and Vibrational properties of BeX compound is presented by performing ab-initio calculations based on density-functional theory using the Espresso package. The calculated value of lattice constant and bulk modulus are compared with the available experimental and other theoretical data and agree reasonably well. BeX (X = S,Se,Te) compounds in the ZB phase are indirect wide band gap semiconductors with an ionic contribution. The phonon dispersion curves are represented which shows that these compounds are dynamically stable in ZB phase.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Science.gov (United States)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Surface Resonance Bands on (001)W: Experimental Dispersion Relations

DEFF Research Database (Denmark)

Willis, R. F.; Feuerbacher, B.; Christensen, N. Egede

1977-01-01

A band of unbound surface states (resonances), located in an energy region above the vacuum threshold corresponding to an energy band gap in the electron states of the bulk crystal, has been observed by angle-resolved secondary-electron-emission spectroscopy. The experimental dispersion behavior...... is in agreement with the two-dimensional band structure of a clean (001)W surface recently proposed by Smith and Mittheiss....

Multisite EPR oximetry from multiple quadrature harmonics.

Science.gov (United States)

Ahmad, R; Som, S; Johnson, D H; Zweier, J L; Kuppusamy, P; Potter, L C

2012-01-01

Multisite continuous wave (CW) electron paramagnetic resonance (EPR) oximetry using multiple quadrature field modulation harmonics is presented. First, a recently developed digital receiver is used to extract multiple harmonics of field modulated projection data. Second, a forward model is presented that relates the projection data to unknown parameters, including linewidth at each site. Third, a maximum likelihood estimator of unknown parameters is reported using an iterative algorithm capable of jointly processing multiple quadrature harmonics. The data modeling and processing are applicable for parametric lineshapes under nonsaturating conditions. Joint processing of multiple harmonics leads to 2-3-fold acceleration of EPR data acquisition. For demonstration in two spatial dimensions, both simulations and phantom studies on an L-band system are reported. Copyright © 2011 Elsevier Inc. All rights reserved.

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)

2012-09-20

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.

Many-electron model for multiple ionization in atomic collisions

International Nuclear Information System (INIS)

Archubi, C D; Montanari, C C; Miraglia, J E

2007-01-01

We have developed a many-electron model for multiple ionization of heavy atoms bombarded by bare ions. It is based on the transport equation for an ion in an inhomogeneous electronic density. Ionization probabilities are obtained by employing the shell-to-shell local plasma approximation with the Levine and Louie dielectric function to take into account the binding energy of each shell. Post-collisional contributions due to Auger-like processes are taken into account by employing recent photoemission data. Results for single-to-quadruple ionization of Ne, Ar, Kr and Xe by protons are presented showing a very good agreement with experimental data

Many-electron model for multiple ionization in atomic collisions

Energy Technology Data Exchange (ETDEWEB)

Archubi, C D [Instituto de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28 (C1428EGA) Buenos Aires (Argentina); Montanari, C C [Instituto de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28 (C1428EGA) Buenos Aires (Argentina); Miraglia, J E [Instituto de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28 (C1428EGA) Buenos Aires (Argentina)

2007-03-14

We have developed a many-electron model for multiple ionization of heavy atoms bombarded by bare ions. It is based on the transport equation for an ion in an inhomogeneous electronic density. Ionization probabilities are obtained by employing the shell-to-shell local plasma approximation with the Levine and Louie dielectric function to take into account the binding energy of each shell. Post-collisional contributions due to Auger-like processes are taken into account by employing recent photoemission data. Results for single-to-quadruple ionization of Ne, Ar, Kr and Xe by protons are presented showing a very good agreement with experimental data.

Design study of an S-band RF cavity of a dual-energy electron LINAC for the CIS

Science.gov (United States)

Lee, Byeong-No; Park, Hyungdal; Song, Ki-baek; Li, Yonggui; Lee, Byung Cheol; Cha, Sung-su; Lee, Jong-Chul; Shin, Seung-Wook; Chai, Jong-seo

2014-01-01

The design of a resonance frequency (RF) cavity for the dual-energy S-band electron linear accelerator (LINAC) has been carried out for the cargo inspection system (CIS). This Standing-wave-type RF cavity is operated at a frequency under the 2856-MHz resonance frequency and generates electron beams of 9 MeV (high mode) and 6 MeV (low mode). The electrons are accelerated from the initial energy of the electron gun to the target energy (9 or 6 MeV) inside the RF cavity by using the RF power transmitted from a 5.5-MW-class klystron. Then, electron beams with a 1-kW average power (both high mode and low mode) bombard an X-ray target a 2-mm spot size. The proposed accelerating gradient was 13 MV/m, and the designed Q value was about 7100. On going research on 15-MeV non-destructive inspections for military or other applications is presented.

The development for C-band whole sealed vacuum accelerating tuber

International Nuclear Information System (INIS)

Zhou Wenzhen; Zhang Xiangyang; Ding Shulin; Hu Jinquan; Yang Zhenyuan

1999-01-01

S-Band standing wave electron linacs have got wide-ranging application for industry nondestructive testing and formed varied kinds of products. X-band electron linac for NDT has been developed by Schonberg Company USA in 1985. Because of bigger structure of S-band linac and difficult machining of X-Band linac, an C-band portable linac for NDT has been developed in CIAE at present, a whole sealed vacuum accelerating tuber will be given here. It consists of 4 cavities, the phase velocity of the first two cavities is 0.5 and 0.9, respectively, and that of the second two cavities is 1. The high power testing proved that the design of the accelerating tuber is good for 1.5 MeV electron linac for NDT

A satellite mobile communication system based on Band-Limited Quasi-Synchronous Code Division Multiple Access (BLQS-CDMA)

Science.gov (United States)

Degaudenzi, R.; Elia, C.; Viola, R.

1990-01-01

Discussed here is a new approach to code division multiple access applied to a mobile system for voice (and data) services based on Band Limited Quasi Synchronous Code Division Multiple Access (BLQS-CDMA). The system requires users to be chip synchronized to reduce the contribution of self-interference and to make use of voice activation in order to increase the satellite power efficiency. In order to achieve spectral efficiency, Nyquist chip pulse shaping is used with no detection performance impairment. The synchronization problems are solved in the forward link by distributing a master code, whereas carrier forced activation and closed loop control techniques have been adopted in the return link. System performance sensitivity to nonlinear amplification and timing/frequency synchronization errors are analyzed.

Effect of structural distortion on the electronic band structure of NaOsO3 studied within density functional theory and a three-orbital model

Science.gov (United States)

Mohapatra, Shubhajyoti; Bhandari, Churna; Satpathy, Sashi; Singh, Avinash

2018-04-01

Effects of the structural distortion associated with the OsO6 octahedral rotation and tilting on the electronic band structure and magnetic anisotropy energy for the 5 d3 compound NaOsO3 are investigated using the density functional theory (DFT) and within a three-orbital model. Comparison of the essential features of the DFT band structures with the three-orbital model for both the undistorted and distorted structures provides insight into the orbital and directional asymmetry in the electron hopping terms resulting from the structural distortion. The orbital mixing terms obtained in the transformed hopping Hamiltonian resulting from the octahedral rotations are shown to account for the fine features in the DFT band structure. Staggered magnetization and the magnetic character of states near the Fermi energy indicate weak coupling behavior.

Band Alignment at GaN/Single-Layer WSe2 Interface

KAUST Repository

Tangi, Malleswararao

2017-02-21

We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Band Alignment at GaN/Single-Layer WSe2 Interface

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Tseng, Chien-Chih; Ng, Tien Khee; Hedhili, Mohamed N.; Anjum, Dalaver H.; Alias, Mohd Sharizal; Wei, Nini; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Strain-induced enhancement of thermoelectric performance of TiS2 monolayer based on first-principles phonon and electron band structures

Science.gov (United States)

Li, Guanpeng; Yao, Kailun; Gao, Guoying

2018-01-01

Using first-principle calculations combined with Boltzmann transport theory, we investigate the biaxial strain effect on the electronic and phonon thermal transport properties of a 1 T (CdI2-type) structural TiS2 monolayer, a recent experimental two-dimensional (2D) material. It is found that the electronic band structure can be effectively modulated and that the band gap experiences an indirect-direct-indirect transition with increasing tensile strain. The band convergence induced by the tensile strain increases the Seebeck coefficient and the power factor, while the lattice thermal conductivity is decreased under the tensile strain due to the decreasing group velocity and the increasing scattering chances between the acoustic phonon modes and the optical phonon modes, which together greatly increase the thermoelectric performance. The figure of merit can reach 0.95 (0.82) at an 8 percent tensile strain for the p-type (n-type) doping, which is much larger than that without strain. The present work suggests that the TiS2 monolayer is a good candidate for 2D thermoelectric materials, and that biaxial strain is a powerful tool with which to enhance thermoelectric performance.

Multiple quasi-monoenergetic electron beams from laser-wakefield acceleration with spatially structured laser pulse

Energy Technology Data Exchange (ETDEWEB)

Ma, Y.; Li, M. H.; Li, Y. F.; Wang, J. G.; Tao, M. Z.; Han, Y. J.; Zhao, J. R.; Huang, K.; Yan, W. C.; Ma, J. L.; Li, Y. T. [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, CAS, Beijing 100080 (China); Chen, L. M., E-mail: lmchen@iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, CAS, Beijing 100080 (China); Department of Physics and Astronomy and IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240 (China); Li, D. Z. [Institute of High Energy Physics, CAS, Beijing 100049 (China); Chen, Z. Y. [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621999 (China); Sheng, Z. M. [Department of Physics and Astronomy and IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240 (China); Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Zhang, J. [Department of Physics and Astronomy and IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240 (China)

2015-08-15

By adjusting the focus geometry of a spatially structured laser pulse, single, double, and treble quasi-monoenergetic electron beams were generated, respectively, in laser-wakefield acceleration. Single electron beam was produced as focusing the laser pulse to a single spot. While focusing the laser pulse to two spots that are approximately equal in energy and size and intense enough to form their own filaments, two electron beams were produced. Moreover, with a proper distance between those two focal spots, three electron beams emerged with a certain probability owing to the superposition of the diffractions of those two spots. The energy spectra of the multiple electron beams are quasi-monoenergetic, which are different from that of the large energy spread beams produced due to the longitudinal multiple-injection in the single bubble.

Stochastic acceleration of electrons from multiple uncorrelated plasma waves

Science.gov (United States)

Gee, David; Michel, Pierre; Wurtele, Jonathan

2017-10-01

One-dimensional theory puts a strict limit on the maximum energy attainable by an electron trapped and accelerated by an electron plasma wave (EPW). However, experimental measurements of hot electron distributions accelerated by stimulated Raman scattering (SRS) in ICF experiments typically show a thermal distribution with temperatures of the order of the kinetic energy of the resonant EPW's (Thot mvp2 , where vp is the phase velocity of the EPW's driven by SRS) and no clear cutoff at high energies. In this project, we are investigating conditions under which electrons can be stochastically accelerated by multiple uncorrelated EPW's, such as those generated by incoherent laser speckles in large laser spots like the ones used on NIF ( mm-size), and reproduce distributions similar to those observed in experiments. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344.

High-order harmonic generation in solid slabs beyond the single-active-electron approximation

Science.gov (United States)

Hansen, Kenneth K.; Deffge, Tobias; Bauer, Dieter

2017-11-01

High-harmonic generation by a laser-driven solid slab is simulated using time-dependent density functional theory. Multiple harmonic plateaus up to very high harmonic orders are observed already at surprisingly low field strengths. The full all-electron harmonic spectra are, in general, very different from those of any individual Kohn-Sham orbital. Freezing the Kohn-Sham potential instead is found to be a good approximation for the laser intensities and harmonic orders considered. The origins of the plateau cutoffs are explained in terms of band gaps that can be reached by Kohn-Sham electrons and holes moving through the band structure.

Electron densities and chemical bonding in TiC, TiN and TiO derived from energy band calculations

International Nuclear Information System (INIS)

Blaha, P.

1983-10-01

It was the aim of this paper to describe the chemical bonding of TiC, TiN and TiO by means of energy bands and electron densities. Using the respective potentials we have calculated the bandstructure of a finer k-grid with the linearized APW method to obtain accurate densities of states (DOS). These DOS wer partitioned into local partial contributions and the metal d DOS were further decomposed into tsub(2g) and esub(g) symmetry components in order to additionally characterize bonding. The electron densities corresponding to the occupied valence states are obtained from the LAPW calculations. They provide further insight into characteristic trends in the series from TiC to TiO: around the nonmetal site the density shows increasing localisation; around the metal site the deviation from spherical symmetry changes from esub(g) to tsub(2g). Electron density plots of characteristic band states allow to describe different types of bonding occurring in these systems. For TiC and TiN recent measurements of the electron densities exist for samples of TiCsub(0.94) and TiNsub(0.99), where defects cause static displacements of the Ti atoms. If this effect can be compensated by an atomic model one hopefully can extrapolate to stoichiometric composition. This procedure allows a comparison with structure factors derived from theoretical electron densities. The agreement for TiN is very good. For TiC the extrapolated data agree in terms of the deviations from spherical symmetry near the Ti site with the LAPW data, but the densities around both atoms are more localized than in theory. An explanation could be: a) the defects affect the electronic structure in TiCsub(0.94) with respect to TiCsub(1.0): b) the applied atomic model does not properly extrapolate to stoichiometry, because parameters of this model correlate or become unphysical. (Author)

Electronic conduction in doped multiferroic BiFeO3

Science.gov (United States)

Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

2009-03-01

Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

Band mapping of surface states vs. adsorbate coverage

International Nuclear Information System (INIS)

Rotenberg, E.; Kevan, S.D.; Denlinger, J.D.; Chung, Jin-Wook

1997-01-01

The theory of electron bands, which arises from basic quantum mechanical principles, has been the cornerstone of solid state physics for over 60 years. Simply put, an energy band is an electron state in a solid whose energy varies with its momentum (similar to, but with a more complicated dependence than, how a free electron's energy is proportional to its momentum squared). Much attention over the last 15 years has been given to the study of band structure of surfaces and interfaces, especially as the applications of these two-dimensional systems have become increasingly important to industry and science. The ultraESCA endstation at beamline 7.01 at the Advanced Light Source was developed for very high-energy - (∼50 meV) and angular - ( 12 photons/sec) makes the detailed study of the evolution of bands possible. The authors are interested in learning how, when one forms a chemical bond between a metal and an overlaying atom or molecule, the resulting charge transfer to or from the adsorbate affects the surface bands. In some cases of interest, intermediate coverages lead to different band structure than at the extremes of clean and saturated surfaces. Surfaces of tungsten are particularly interesting, as their atomic geometry has been shown to be exquisitely sensitive to both the surface vibrational and electronic properties. In this study, the authors looked at the surface bands of tungsten ((110) surface), as a function both of coverage and mass of overlaying atoms. The adsorbed atoms were hydrogen and the alkali atoms lithium and cesium

Characteristics of unexpected protein bands in multiple myeloma patients after autologous stem cell transplantation.

Science.gov (United States)

Kim, Soo-Kyung; Jeong, Tae-Dong; Kim, So Young; Lee, Woochang; Chun, Sail; Suh, Cheol Won; Min, Won-Ki

2014-05-01

The aim of this study is to investigate the characteristics of unexpected protein bands (UPBs) in patients with multiple myeloma (MM). Individuals diagnosed with MM (n=193) were enrolled. Their medical records and IFE patterns were reviewed. Of the patients that underwent ASCT, 54% developed UPBs. The median time for UPB appearance and duration was 1.8 and 5.7months, respectively. IFE revealed 74.1% of UPBs to be of the immunoglobulin G type and 72.2% to be of the κ-type. At UPB appearance, 42.6% of patients were defined as sCR or CR, and 50.0% of the patients satisfying the CR criteria had an abnormal FLC ratio. Of the patients who developed UPBs, five relapsed. Among these, four patients showed disappearance of the previous IFE oligoclonality and reappearance of the original paraprotein at relapse. Close follow-up of UPBs is critical for evaluating MM therapeutic response and disease progression. The presence of monoclonal bands may indicate relapse of disease, but in the vast majority of cases with UPBs, it does not; instead, it most likely represents a transient phenomenon caused by the immune response. Copyright © 2014 The Canadian Society of Clinical Chemists. Published by Elsevier Inc. All rights reserved.

Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

Energy Technology Data Exchange (ETDEWEB)

Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)

2016-02-07

III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

Effect of pressure on the structural properties and electronic band structure of GaSe

Energy Technology Data Exchange (ETDEWEB)

Schwarz, U.; Olguin, D.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany); Cantarero, A. [Department of Materials Sciences, University of Valencia, 46000 Burjasot (Spain); Hanfland, M. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble (France)

2007-01-15

The structural properties of GaSe have been investigated up to 38 GPa by monochromatic X-ray diffraction. The onset of the phase transition from the {epsilon}-GaSe to a disordered NaCl-type structural motif is observed near 21 GPa. Using the experimentally determined lattice parameters of the layered {epsilon}-phase as input, constrained ab-initio total energy calculations were performed in order to optimize the internal structural parameters at different pressures. The results obtained for the nearest-neighbor Ga-Se distance agree with those derived from recent EXAFS measurements. In addition, information is obtained on the changes of Ga-Ga and Se-Se bond lengths which were not accessible to a direct experimental determination yet. Based on the optimized structural parameters, we report calculations of band gap changes of {epsilon}-GaSe under pressure. The optical response and electronic band structure of the metallic high-pressure phase of GaSe are discussed briefly. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Location of the valence band maximum in the band structure of anisotropic 1 T'-ReSe2

Science.gov (United States)

Eickholt, P.; Noky, J.; Schwier, E. F.; Shimada, K.; Miyamoto, K.; Okuda, T.; Datzer, C.; Drüppel, M.; Krüger, P.; Rohlfing, M.; Donath, M.

2018-04-01

Transition-metal dichalcogenides (TMDCs) are a focus of current research due to their fascinating optical and electronic properties with possible technical applications. ReSe2 is an interesting material of the TMDC family, with unique anisotropic properties originating from its distorted 1 T structure (1 T '). To develop a fundamental understanding of the optical and electric properties, we studied the underlying electronic structure with angle-resolved photoemission (ARPES) as well as band-structure calculations within the density functional theory (DFT)-local density approximation (LDA) and GdW approximations. We identified the Γ ¯M¯1 direction, which is perpendicular to the a axis, as a distinct direction in k space with the smallest bandwidth of the highest valence band. Using photon-energy-dependent ARPES, two valence band maxima are identified within experimental limits of about 50 meV: one at the high-symmetry point Z , and a second one at a non-high-symmetry point in the Brillouin zone. Thus, the position in k space of the global valence band maximum is undecided experimentally. Theoretically, an indirect band gap is predicted on a DFT-LDA level, while quasiparticle corrections lead to a direct band gap at the Z point.

Giant amplification in degenerate band edge slow-wave structures interacting with an electron beam

Energy Technology Data Exchange (ETDEWEB)

Othman, Mohamed A. K.; Veysi, Mehdi; Capolino, Filippo [Department of Electrical Engineering and Computer Science, University of California, Irvine, California 92697 (United States); Figotin, Alexander [Department of Mathematics, University of California, Irvine, California 92697 (United States)

2016-03-15

We propose a new amplification regime based on a synchronous operation of four degenerate electromagnetic (EM) modes in a slow-wave structure and the electron beam, referred to as super synchronization. These four EM modes arise in a Fabry-Pérot cavity when degenerate band edge (DBE) condition is satisfied. The modes interact constructively with the electron beam resulting in superior amplification. In particular, much larger gains are achieved for smaller beam currents compared to conventional structures based on synchronization with only a single EM mode. We demonstrate giant gain scaling with respect to the length of the slow-wave structure compared to conventional Pierce type single mode traveling wave tube amplifiers. We construct a coupled transmission line model for a loaded waveguide slow-wave structure exhibiting a DBE, and investigate the phenomenon of giant gain via super synchronization using the Pierce model generalized to multimode interaction.

Upgrade of the ISIR L-band linac at Osaka University and stabilization of the electron beam

International Nuclear Information System (INIS)

Kato, R.; Kashiwagi, S.; Yamamoto, T.; Suemine, S.; Isoyama, G.

2004-01-01

The L-band electron linac at the Institute of Scientific and Industrial Research, Osaka University has been extensively remodeled to realize high operational stability and reproducibility for advanced studies in beam science and technology. Almost all the peripheral components are replaced with new ones. The modification of the linac has been completed and commissioning is now in progress. In this paper, we will report performance and characteristics of the linac after modification. (author)

Ab-initio electronic band structure calculations for beryllium chalcogenides

International Nuclear Information System (INIS)

Kalpana, G.; Pari, G.; Yousuf, Mohammad

1997-01-01

The first principle tight-binding linear muffin-tin orbital method within the local density approximation (LDA) has been used to calculate the ground state properties, structural phase transition and pressure dependence of band gap of BeS, BeSe and BeTe. We have calculated the energy-volume relations for these compounds in the B3 and B8 phases. The calculated lattice parameters, bulk modulus and the pressure-volume relation were found to be in good agreement with the recent experimental results. The calculated B3→B8 structural transition pressure for BeS, BeSe and BeTe agree well with the recent experimental results. Our calculations show that these compounds are indirect band gap (Γ-X) semiconductors at ambient conditions. The calculated band gap values are found to be underestimated by 20-30% which is due to the usage of LDA. After the structural transition to the B8 phase, BeS continues to be indirect band gap semiconductors and ultimately above 100 GPa it metallises, BeSe and BeTe are metallic at the B3→B8 structural transition. (author)

UV resonance Raman finds peptide bond-Arg side chain electronic interactions.

Science.gov (United States)

Sharma, Bhavya; Asher, Sanford A

2011-05-12

We measured the UV resonance Raman excitation profiles and Raman depolarization ratios of the arginine (Arg) vibrations of the amino acid monomer as well as Arg in the 21-residue predominantly alanine peptide AAAAA(AAARA)(3)A (AP) between 194 and 218 nm. Excitation within the π → π* peptide bond electronic transitions result in UVRR spectra dominated by amide peptide bond vibrations. The Raman cross sections and excitation profiles indicate that the Arg side chain electronic transitions mix with the AP peptide bond electronic transitions. The Arg Raman bands in AP exhibit Raman excitation profiles similar to those of the amide bands in AP which are conformation specific. These Arg excitation profiles distinctly differ from the Arg monomer. The Raman depolarization ratios of Arg in monomeric solution are quite simple with ρ = 0.33 indicating enhancement by a single electronic transition. In contrast, we see very complex depolarization ratios of Arg in AP that indicate that the Arg residues are resonance enhanced by multiple electronic transitions.

Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

Science.gov (United States)

Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

2018-02-28

In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

International Nuclear Information System (INIS)

Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

2011-01-01

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

Energy Technology Data Exchange (ETDEWEB)

Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

2011-04-15

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

X-band rf driven free electron laser driver with optics linearization

Directory of Open Access Journals (Sweden)

Yipeng Sun (孙一鹏

2014-11-01

Full Text Available In this paper, a compact hard X-ray free electron lasers (FEL design is proposed with all X-band rf acceleration and two stage bunch compression. It eliminates the need of a harmonic rf linearization section by employing optics linearization in its first stage bunch compression. Quadrupoles and sextupoles are employed in a bunch compressor one (BC1 design, in such a way that second order longitudinal dispersion of BC1 cancels the second order energy correlation in the electron beam. Start-to-end 6-D simulations are performed with all the collective effects included. Emittance growth in the horizontal plane due to coherent synchrotron radiation is investigated and minimized, to be on a similar level with the successfully operating Linac coherent light source (LCLS. At a FEL radiation wavelength of 0.15 nm, a saturation length of 40 meters can be achieved by employing an undulator with a period of 1.5 cm. Without tapering, a FEL radiation power above 10 GW is achieved with a photon pulse length of 50 fs, which is LCLS-like performance. The overall length of the accelerator plus undulator is around 250 meters which is much shorter than the LCLS length of 1230 meters. That makes it possible to build hard X-ray FEL in a laboratory with limited size.

Robust and adaptive band-to-band image transform of UAS miniature multi-lens multispectral camera

Science.gov (United States)

Jhan, Jyun-Ping; Rau, Jiann-Yeou; Haala, Norbert

2018-03-01

Utilizing miniature multispectral (MS) or hyperspectral (HS) cameras by mounting them on an Unmanned Aerial System (UAS) has the benefits of convenience and flexibility to collect remote sensing imagery for precision agriculture, vegetation monitoring, and environment investigation applications. Most miniature MS cameras adopt a multi-lens structure to record discrete MS bands of visible and invisible information. The differences in lens distortion, mounting positions, and viewing angles among lenses mean that the acquired original MS images have significant band misregistration errors. We have developed a Robust and Adaptive Band-to-Band Image Transform (RABBIT) method for dealing with the band co-registration of various types of miniature multi-lens multispectral cameras (Mini-MSCs) to obtain band co-registered MS imagery for remote sensing applications. The RABBIT utilizes modified projective transformation (MPT) to transfer the multiple image geometry of a multi-lens imaging system to one sensor geometry, and combines this with a robust and adaptive correction (RAC) procedure to correct several systematic errors and to obtain sub-pixel accuracy. This study applies three state-of-the-art Mini-MSCs to evaluate the RABBIT method's performance, specifically the Tetracam Miniature Multiple Camera Array (MiniMCA), Micasense RedEdge, and Parrot Sequoia. Six MS datasets acquired at different target distances and dates, and locations are also applied to prove its reliability and applicability. Results prove that RABBIT is feasible for different types of Mini-MSCs with accurate, robust, and rapid image processing efficiency.

Electronic Structure and Band Alignment at the NiO and SrTiO ₃ p–n Heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Zhang, Kelvin H. L. [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Wu, Rui [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Tang, Fengzai [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Li, Weiwei [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Oropeza, Freddy E. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.; Qiao, Liang [School of Materials, The University of Manchester, Manchester M13 9PL, U.K.; Lazarov, Vlado K. [Department of Physics, University of York, Heslington, York YO10 5DD, U.K.; Du, Yingge [Physical Sciences Division, Physical & amp, Computational; Payne, David J. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.; MacManus-Driscoll, Judith L. [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Blamire, Mark G. [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.

2017-07-25

Understanding the energetics at the interface including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multi-functionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the hetero-interface of wide bandgap p-type NiO and n-type SrTiO3 (STO). We show that despite a large lattice mismatch (~7%) and dissimilar crystal structure, high-quality NiO and Li doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain matching epitaxy (DME) mechanism. X-ray photoelectron spectroscopy (XPS) studies indicate that NiO/STO heterojunctions form a type II “staggered” band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit a large rectification ratio of 2×103, but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implication for applications in photocatalysis and photodetector as the interface provides favourable energetics for facile separation and transport of photogenerated electrons and holes.

Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

Science.gov (United States)

Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

2016-04-01

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

Role of electron-electron interactions in the RKKY theory of magnetism

International Nuclear Information System (INIS)

Cooke, J.F.

1978-10-01

The theory of magnetism in heavy rare earth metals is based on the RKKY theory. In this formalism the indirect exchange interaction between the local 4f spins is mediated by the conduction electrons. When carried to second order in the 4f-conduction electron interaction, traditional perturbation theory leads to a Heisenberg-like interaction between the local spins which depends on the electronic energy bands and 4f-conduction electron exchange matrix elements. This derivation neglects the detailed behavior of electron-electron interaction within the conduction band, which is known to be important in metallic systems. By using an equation of motion method, an expression for the inelastic neutron scattering cross-section has been derived which includes, in an approximate way, this electron-electron interaction. The results of this calculation indicate that spin-wave peaks can be broadened and shifted if the spin-wave band lies near the conduction electron Stoner continuum. The origin of this effect is similar to that found in itinerant electron systems where the spin-wave band actually intersects the Stoner continuum, resulting in the disappearance of the spin-wave mode

Role of electron-electron interactions in the RKKY theory of magnetism

International Nuclear Information System (INIS)

Cooke, J.F.

1979-01-01

The theory of magnetism in heavy rare earth metals is based on the RKKY theory. In this formalism the indirect exchange interaction between the local 4f spins is mediated by the conduction electrons. When carried to second order in the 4f-conduction electron interaction, traditional pertubation theory leads to a Heisenberg-like interaction between the local spins which depends on the electronic energy bands and 4f-conduction electron exchange matrix elements. This derivation neglects the detailed behavior of electron-electron interaction within the conduction band, which is known to be important in metallic systems. By using an equation of motion method, an expression for the inelastic neutron scattering cross-section has been derived which includes, in an approximate way, this electron-electron interaction. The results of this calculation indicate that spin-wave peaks can be broadened and shifted if the spin-wave band lies near the conduction electron Stoner continuum. The origin of this effect is similar to that found in itinerant electron systems where the spin-wave band actually intersects the Stoner continuum, resulting in the disappearance of the spin-wave mode

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

Science.gov (United States)

Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

2016-05-11

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

Mean-field results of the multiple-band extended Hubbard model for the square-planar CuO2 lattice

International Nuclear Information System (INIS)

Nimkar, S.; Sarma, D.D.; Krishnamurthy, H.R.; Ramasesha, S.

1993-01-01

We obtain metal-insulator phase diagrams at half-filling for the five-band extended Hubbard model of the square-planar CuO 2 lattice treated within a Hartree-Fock mean-field approximation, allowing for spiral spin-density waves. We indicate the existence of an insulating phase (covalent insulator) characterized by strong covalency effects, not identified in the earlier Zaanen-Sawatzky-Allen phase diagram. While the insulating phase is always antiferromagnetic, we also obtain an antiferromagnetic metallic phase for a certain range of interaction parameters. Performing a nonperturbative calculation of J eff , the in-plane antiferromagnetic interaction is presented as a function of the parameters in the model. We also calculate the band gap and magnetic moments at various sites and discuss critically the contrasting interpretation of the electronic structure of high-T c materials arising from photoemission and neutron-scattering experiments

Band theory of metals the elements

CERN Document Server

Altmann, Simon L

1970-01-01

Band Theory of Metals: The Elements focuses on the band theory of solids. The book first discusses revision of quantum mechanics. Topics include Heisenberg's uncertainty principle, normalization, stationary states, wave and group velocities, mean values, and variational method. The text takes a look at the free-electron theory of metals, including heat capacities, density of states, Fermi energy, core and metal electrons, and eigenfunctions in three dimensions. The book also reviews the effects of crystal fields in one dimension. The eigenfunctions of the translations; symmetry operations of t

Low-order-mode harmonic multiplying gyrotron traveling-wave amplifier in W band

International Nuclear Information System (INIS)

Yeh, Y. S.; Chen, C. H.; Yang, S. J.; Lai, C. H.; Lin, T. Y.; Lo, Y. C.; Hong, J. W.; Hung, C. L.; Chang, T. H.

2012-01-01

Harmonic multiplying gyrotron traveling-wave amplifiers (gyro-TWAs) allow for magnetic field reduction and frequency multiplication. To avoid absolute instabilities, this work proposes a W-band harmonic multiplying gyro-TWA operating at low-order modes. By amplifying a fundamental harmonic TE 11 drive wave, the second harmonic component of the beam current initiates a TE 21 wave to be amplified. Absolute instabilities in the gyro-TWA are suppressed by shortening the interaction circuit and increasing wall losses. Simulation results reveal that compared with Ka-band gyro-TWTs, the lower wall losses effectively suppress absolute instabilities in the W-band gyro-TWA. However, a global reflective oscillation occurs as the wall losses decrease. Increasing the length or resistivity of the lossy section can reduce the feedback of the oscillation to stabilize the amplifier. The W-band harmonic multiplying gyro-TWA is predicted to yield a peak output power of 111 kW at 98 GHz with an efficiency of 25%, a saturated gain of 26 dB, and a bandwidth of 1.6 GHz for a 60 kV, 7.5 A electron beam with an axial velocity spread of 8%.

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Chen Feng [Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Euaruksakul, Chanan; Himpsel, F J; Lagally, Max G [University of Wisconsin-Madison, Madison, WI 53706 (United States); Liu Zheng; Liu Feng, E-mail: lagally@engr.wisc.edu [University of Utah, Salt Lake City, UT 84112 (United States)

2011-08-17

Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate {Delta} valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both {Delta} and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.

Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study.

Science.gov (United States)

Arantes, J T; Lima, M P; Fazzio, A; Xiang, H; Wei, Su-Huai; Dalpian, G M

2009-04-23

The structural and electronic properties of perylene diimide liquid crystal PPEEB are studied using ab initio methods based on the density functional theory (DFT). Using available experimental crystallographic data as a guide, we propose a detailed structural model for the packing of solid PPEEB. We find that due to the localized nature of the band edge wave function, theoretical approaches beyond the standard method, such as hybrid functional (PBE0), are required to correctly characterize the band structure of this material. Moreover, unlike previous assumptions, we observe the formation of hydrogen bonds between the side chains of different molecules, which leads to a dispersion of the energy levels. This result indicates that the side chains of the molecular crystal not only are responsible for its structural conformation but also can be used for tuning the electronic and optical properties of these materials.

Microwave matching and tuning on the 20-MeV medical electron linac with feedback of rf power

International Nuclear Information System (INIS)

Yuan-ling, Wang

1983-01-01

This article describes the 20 Mev medical electron linac at Jiangsu Tumour Hospital. In the linac, feedback of rf power is used. In the linac with feedback (or with the resonator) the reflection affects the energy gain of the electron and the performance of the accelerator. By means of the theory of the traveling wave resonator, the field multiplication factor and the reflection coefficients inside and outside the feedback ring are calculated. The bands of the linacs without and with feedback are measured. In order to achieve a desirable band in front of the load (i.e. outside the feedback ring) a matching iris is added. After the linac with feedback has been matched, the band is given

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Palomares, A. [Departamento de Matemática Aplicada, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

2016-01-28

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

First principles study of the electronic properties and band gap modulation of two-dimensional phosphorene monolayer: Effect of strain engineering

Science.gov (United States)

Phuc, Huynh V.; Hieu, Nguyen N.; Ilyasov, Victor V.; Phuong, Le T. T.; Nguyen, Chuong V.

2018-06-01

The effect of strain on the structural and electronic properties of monolayer phosphorene is studied by using first-principle calculations based on the density functional theory. The intra- and inter-bond length and bond angle for monolayer phosphorene is also evaluated. The intra- and inter-bond length and the bond angle for phosphorene show an opposite tendency under different directions of the applied strain. At the equilibrium state, monolayer phosphorene is a semiconductor with a direct band gap at the Γ-point of 0.91 eV. A direct-indirect band gap transition is found in monolayer phosphorene when both the compression and tensile strain are simultaneously applied along both zigzag and armchair directions. Under the applied compression strain, a semiconductor-metal transition for monolayer phosphorene is observed at -13% and -10% along armchair and zigzag direction, respectively. The direct-indirect and phase transition will largely constrain application of monolayer phosphorene to electronic and optical devices.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

Science.gov (United States)

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

Directory of Open Access Journals (Sweden)

F. L. Freitas

2016-08-01

Full Text Available We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal AlxGayIn1–x–yN semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.

First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

Energy Technology Data Exchange (ETDEWEB)

Freitas, F. L., E-mail: felipelopesfreitas@gmail.com; Marques, M.; Teles, L. K. [Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, SP (Brazil)

2016-08-15

We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal Al{sub x}Ga{sub y}In{sub 1–x–y}N semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.

A Case Study Exploring the Use of GarageBand[TM] and an Electronic Bulletin Board in Preservice Music Education

Science.gov (United States)

Vratulis, Vetta; Morton, Charlene

2011-01-01

This qualitative research study is an exploration of the merit and shortcomings of using a combination of the music software GarageBand[TM] and an electronic bulletin board to facilitate musical and peer learning in a 3-month elementary music methods curriculum and instruction course. A pedagogical objective of this assignment was to increase the…

Fast broad-band photon detector based on quantum well devices and charge-integrating electronics for non-invasive FEL monitoring

Energy Technology Data Exchange (ETDEWEB)

Antonelli, M., E-mail: matias.antonelli@elettra.eu; Cautero, G.; Sergo, R.; Castellaro, C.; Menk, R. H. [Elettra – Sincrotrone Trieste S.C.p.A., Trieste (Italy); Ganbold, T. [School in Nanotechnology, University of Trieste, Trieste (Italy); IOM CNR, Laboratorio TASC, Trieste (Italy); Biasiol, G. [IOM CNR, Laboratorio TASC, Trieste (Italy)

2016-07-27

The recent evolution of free-electron lasers has not been matched by the development of adequate beam-monitoring instrumentation. However, for both experimental and diagnostics purposes, it is crucial to keep such photon beams under control, avoiding at the same time the absorption of the beam and the possible destruction of the detector. These requirements can be fulfilled by utilizing fast and non-invasive photon detectors operated in situ, upstream from the experimental station. From this perspective, sensors based on Quantum Well (QW) devices can be the key to detecting ultra-short light pulses. In fact, owing to their high electron mobility, InGaAs/InAlAs QW devices operated at room temperature exhibit sub-nanosecond response times. Their direct, low-energy band gap renders them capable of detecting photons ranging from visible to X-ray. Furthermore, the 2D electron gas forming inside the QW is responsible for a charge amplification mechanism, which increases the charge collection efficiency of these devices. In order to acquire the signals produced by these QW sensors, a novel readout electronics has been developed. It is based on a high-speed charge integrator, which allows short, low-intensity current pulses to be read within a 50-ns window. The integrated signal is acquired through an ADC and the entire process can be performed at a 10-MHz repetition rate. This work provides a detailed description of the development of the QW detectors and the acquisition electronics, as well as reporting the main experimental results, which show how these tools are well suited for the realization of fast, broad-band beam monitors.

Electronic structure and electron dynamics at Si(100)

Energy Technology Data Exchange (ETDEWEB)

Weinelt, M. [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Festkoerperphysik, Erlangen (Germany); Max-Born-Institut, Berlin (Germany); Kutschera, M.; Schmidt, R.; Orth, C.; Fauster, T. [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Festkoerperphysik, Erlangen (Germany); Rohlfing, M. [International University Bremen, School of Engineering and Science, P.O. Box 750 561, Bremen (Germany)

2005-02-01

The electronic structure and electron dynamics at a Si(100) surface is studied by two-photon photoemission (2PPE). At 90 K the occupied D{sub up} dangling-bond state is located 150{+-}50 meV below the valence-band maximum (VBM) at the center of the surface Brillouin zone anti {gamma} and exhibits an effective hole mass of (0.5{+-}0.15)m{sub e}. The unoccupied D{sub down} band has a local minimum at anti {gamma} at 650{+-}50 meV above the VBM and shows strong dispersion along the dimer rows of the c(4 x 2) reconstructed surface. At 300 K the D{sub down} position shifts comparable to the Si conduction-band minimum by 40 meV to lower energies but the dispersion of the dangling-bond states is independent of temperature. The surface band bending for p-doped silicon is less than 30 meV, while acceptor-type defects cause significant and preparation-dependent band bending on n-doped samples. 2PPE spectra of Si(100) are dominated by interband transitions between the occupied and unoccupied surface states and emission out of transiently and permanently charged surface defects. Including electron-hole interaction in many-body calculations of the quasi-particle band structure leads us to assign a dangling-bond split-off state to a quasi-one-dimensional surface exciton with a binding energy of 130 meV. Electrons resonantly excited to the unoccupied D{sub down} dangling-bond band with an excess energy of about 350 meV need 1.5{+-}0.2 ps to scatter via phonon emission to the band bottom at anti {gamma} and relax within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds. (orig.)

Land cover change detection using the internal covariance matrix of the extended kalman filter over multiple spectral bands

CSIR Research Space (South Africa)

Salmon

2013-06-01

Full Text Available stream_source_info Salmon_10577_2013.pdf.txt stream_content_type text/plain stream_size 1183 Content-Encoding ISO-8859-1 stream_name Salmon_10577_2013.pdf.txt Content-Type text/plain; charset=ISO-8859-1 IEEE Journal... of Selected Topics in Applied Earth Observations and Remote Sensing, vol, 6(3): 1079- 1085 Land cover change detection using the internal covariance matrix of the extended kalman filter over multiple spectral bands Salmon BP Kleynhans W Van den Bergh...

Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals.

Science.gov (United States)

Livache, Clément; Goubet, Nicolas; Martinez, Bertille; Jagtap, Amardeep; Qu, Junling; Ithurria, Sandrine; Silly, Mathieu G; Dubertret, Benoit; Lhuillier, Emmanuel

2018-04-11

Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.

Highly miniaturised semi-loop meandered dual-band MIMO antenna system

KAUST Repository

Jehangir, Syed S.

2017-12-05

A novel dual-band two-element directional multiple-input-multiple-output (MIMO) antenna system is presented with 68% miniaturisation, which is achieved using a semi-loop meandered driven element and a small ground plane. The centre frequency of operation is 2 GHz. The antenna system covers two bands: the telemetry L-band 1.27-1.43 GHz and the global system for mobile communications/long-term evolution band 1.8-2.133 GHz. The simulation and measurement results are in good agreement. The proposed antenna system mimics the quasi-Yagi antenna configuration with a measured front-to-back ratio of around 15 dB at 1.35 GHz and 17 dB at 2 GHz, which is achieved without using a large ground plane, extra metallic structures, multiple reflector elements, or any complex technique. A gain of more than 5 dBi is measured for the single element with a total radiation efficiency of around 85% in both bands. The measured isolation of the proposed MIMO antenna is more than 15 dB with < 0.0785 measured envelope correlation coefficient values in both bands.

Highly miniaturised semi-loop meandered dual-band MIMO antenna system

KAUST Repository

Jehangir, Syed S.; Sharawi, Mohammad S.; Shamim, Atif

2017-01-01

A novel dual-band two-element directional multiple-input-multiple-output (MIMO) antenna system is presented with 68% miniaturisation, which is achieved using a semi-loop meandered driven element and a small ground plane. The centre frequency of operation is 2 GHz. The antenna system covers two bands: the telemetry L-band 1.27-1.43 GHz and the global system for mobile communications/long-term evolution band 1.8-2.133 GHz. The simulation and measurement results are in good agreement. The proposed antenna system mimics the quasi-Yagi antenna configuration with a measured front-to-back ratio of around 15 dB at 1.35 GHz and 17 dB at 2 GHz, which is achieved without using a large ground plane, extra metallic structures, multiple reflector elements, or any complex technique. A gain of more than 5 dBi is measured for the single element with a total radiation efficiency of around 85% in both bands. The measured isolation of the proposed MIMO antenna is more than 15 dB with < 0.0785 measured envelope correlation coefficient values in both bands.

Rocket measurements of electrons in a system of multiple auroral arcs

Science.gov (United States)

Boyd, J. S.; Davis, T. N.

1977-01-01

A Nike-Tomahawk rocket was launched into a system of auroral arcs northward of Poker Flat Research Range, Fairbanks, Alaska. The pitch-angle distribution of electrons was measured at 2.5, 5, and 10 keV and also at 10 keV on a separating forward section of the payload. The auroral activity appeared to be the extension of substorm activity centered to the east. The rocket crossed a westward-propagating fold in the brightest band. The electron spectrum was relatively hard through most of the flight, showing a peak in the range from 2.5 to 10 keV in the weaker aurora and below 5 keV in the brightest arc. The detailed structure of the pitch-angle distribution suggested that, at times, a very selective process was accelerating some electrons in the magnetic field direction, so that a narrow field-aligned component appeared superimposed on a more isotropic distribution. It is concluded that this process could not be a near-ionosphere field-aligned potential drop, although the more isotropic component may have been produced by a parallel electric field extending several thousand kilometers along the field line above the ionosphere.

Rocket measurements of electrons in a system of multiple auroral arcs

International Nuclear Information System (INIS)

Boyd, J.S.; Davis, T.N.

1977-01-01

A Nike-Tomahawk rocket was launched into a system of auroral arcs northward of Poker Flat Research Range, Fairbanks, Alaska, at 0815 UT on March 20, 1971. The pitch angle distribution of electrons was measured at 2.5, 5, and 10 keV and also at 10 keV on a separating forward section of the payload. The auroral activity appeared to be the extension of substorm activity centered to the east. The rocket crossed a westward propagating fold in the brightest band. The electron spectrum was relatively hard through most of the flight, showing a peak in the range 2.5 5 keV in the brightest arc. The detailed structure of the pitch angle distribution suggested that, at times, a very selective process was accelerating some electrons in the direction of B, so that a narrow field-aligned component appeared superimposed on a more isotropic distribution. It is concluded that this process could not be a near-ionosphere field-aligned potential drop, although the more isotropic component may have been produced by a parallel electric field extending several thousand kilometers along the field line above the ionsophere

Broad-band beam buncher

International Nuclear Information System (INIS)

Goldberg, D.A.; Flood, W.S.; Arthur, A.A.; Voelker, F.

1986-01-01

This patent describes a broad-band beam buncher. This beam buncher consists of: a housing adapted to be eacuated, an electron gun in the housing for producing a beam of electrons, buncher means in the housing forming a buncher cavity which has an entrance opening for receiving the electron beam and an exit opening through which the electron beam passes out of the buncher cavity, a drift tube electrode in the buncher cavity and disposed between the entrance opening and the exit opening with first and second gaps between the drift tube electrode and the entrance and exit openings, the drift tube electrode which has a first drift space through which the electron beam passes in traveling between the entrance and exit openings, modulating means for supplying an ultrahigh frequeny modulating signal to the drift tube electrode for producing velocity modulation of the electrons in the electron beam as the electrons pass through the buncher cavity and the drift tube electrode between the entrance opening and the exit opening, drift space means in the housing forming a second drift space for receiving the velocity modulated electron beam from the exit opening, the velocity modulated electron beam being bunched as it passes along the second drift space, the drift space means has a discharge opening through which the electron beam is discharged from the second drift space after being bunched therein, the modulating means containing a signal source for producing an ultrahigh frequency signal, a transmission line connected between the signal source and the drift tube electrode, and terminating means connected to the drift tube electrode for terminating the transmission line in approximately its characteristic impedance to afford a broad response band with minimum 6 variations therein

Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

DEFF Research Database (Denmark)

Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

2009-01-01

Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

Tl4CdI6 – Wide band gap semiconductor: First principles modelling of the structural, electronic, optical and elastic properties

International Nuclear Information System (INIS)

Piasecki, M.; Brik, M.G.; Kityk, I.V.

2015-01-01

A novel infrared optoelectronic material Tl 4 CdI 6 was studied using the density functional theory (DFT)-based techniques. Its structural, electronic, optical and elastic properties were all calculated in the generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) and the local density approximation (LDA) with the Ceperley-Alder–Perdew-Zunger (CA–PZ) functionals. The studied material is a direct band gap semiconductor with the calculated band gaps of 2.043 eV (GGA) and 1.627 eV (LDA). The wavelength dependence of the refractive index was fitted to the Sellmeier equation in the spectral range from 400 to 2000 nm. Good agreement between the GGA-calculated values of refractive index and experimental data was achieved. To the best of our knowledge, this is the first consistent theoretical description of the title compound, which includes calculations and analysis of the structural, electronic, optical and elastic properties. - Graphical abstract: Display Omitted - Highlights: • Infrared optoelectronic material Tl 4 CdI 6 was studied using ab initio methods. • Structural, electronic, optical and elastic properties were calculated. • Independent components of the elastic constants tensor were calculated. • Good agreement with available experimental results was achieved

Probing the Electronic Structure and Band Gap Evolution of Titanium Oxide Clusters (TiO2)n- (n=1-10) Using Photoelectron Spectroscopy

International Nuclear Information System (INIS)

Zhai, Hua-jin; Wang, Lai S.

2007-01-01

TiO2 is a wide-band gap semiconductor and it is an important material for photocatalysis. Here we report an experimental investigation of the electronic structure of (TiO2)n clusters and how their band gap evolves as a function of size using anion photoelectron spectroscopy (PES). PES spectra of (TiO2)n- clusters for n = 1-10 have been obtained at 193 (6.424 eV) and 157 nm (7.866 eV). The high photon energy at 157 nm allows the band gap of the TiO2 clusters to be clearly revealed up to n = 10. The band gap is observed to be strongly size-dependent for n 1 appears to be localized in a tricoordinated Ti atom, creating a single Ti3+ site and making these clusters ideal molecular models for mechanistic understanding of TiO2 surface defects and photocatalytic properties

Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity

International Nuclear Information System (INIS)

Nelson, A.J.

1995-01-01

Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

Multiplicity-Vertex Detector Electronics Development for Heavy-Ion Detectors

Energy Technology Data Exchange (ETDEWEB)

Britton, C.L., Jr.; Bryan, W.L.; Emery, M.S. [and others

1995-12-31

This paper presents the electronics work performed to date for the Multiplicity-Vertex Detector (MVD) for the PHENIX collaboration at RHIC. The detector consists of approximately 34,000 channels of both silicon strips and silicon pads. The per-channel signal processing chain consists of a pre-amplifier gain stage, a current mode summed multiplicity discriminator, a 64 deep analog memory (simultaneous read/write), an analog correlator, and a 10-bit microsecs ADC. The system controller or Heap Manager, supplies all timing control, data buffering, and data formatting for a single 256-channel multi-chip module (MCM). Each chip set is partitioned into 32-channel sets. Prototype performance for the various blocks will be presented as well as the ionizing radiation damage performance of the 1.2 mu nwell CMOS process used for fabrication.

Detailed characterization of complex banding in air-cooled bainitic steels

Directory of Open Access Journals (Sweden)

Morales-Rivas L.

2015-01-01

Full Text Available The presence of banding in a hot-rolled air-cooled bainitic steel has been thoroughly characterized. The banded microstructure was observed due to distinctive sensitivities to the etching agent. Microstructural and crystallographic studies by means of Scanning Electron Microscopy and Electron Backscatter Diffraction did not reveal any substantial differences between bands and matrix. However, solute segregation of some alloying elements was detected by Wavelength- Dispersive Spectroscopy, being found that bands are enriched in Cr, Mo and Si and depleted in Mn. Finally, a set of theoretical calculations suggested that the solidification mode is responsible for such unusual partitioning behavior, which is beneficial in terms of the bainitic transformation.

Two types of fundamental luminescence of ionization-passive electrons and holes in optical dielectrics—Intraband-electron and interband-hole luminescence (theoretical calculation and comparison with experiment)

Science.gov (United States)

Vaisburd, D. I.; Kharitonova, S. V.

1997-11-01

A short high-power pulse of ionizing radiation creates a high concentration of nonequilibrium electrons and holes in a dielectric. They quickly lose their energy, generating a multiplicity of secondary quasiparticles: electron—hole pairs, excitons, plasmons, phonons of all types, and others. When the kinetic energy of an electron becomes less that some value EΔ≈(1.3-2)Eg it loses the ability to perform collisional ionization and electron excitations of the dielectric medium. Such an electron is said to be ionization-passive. It relaxes to the bottom of the lower conduction band by emitting phonons. Similarly a hole becomes ionization-passive when it “floats up” above some level EH and loses the ability for Auger ionization of the dielectric medium. It continues to float upward to the ceiling of the upper valance band only by emitting phonons. The concentrations of ionization-passive electrons and holes are larger by several orders of magnitude than those of the active electrons and holes and consequently make of a far larger contribution to many kinetic processes such as luminescence. Intraband and interband quantum transitions make the greatest contribution to the fundamental (independent of impurities and intrinsic defects) electromagnetic radiation of ionization-passive electrons and holes. Consequently the brightest types of purely fundamental luminescence of strongly nonequilibrium electrons and holes are intraband and interband luminescence. These forms of luminescence, discovered relatively recently, carry valuable information on the high-energy states of the electrons in the conduction band and of the holes in the valence band of a dielectric. Experimental investigations of these types of luminescence were made, mainly on alkali halide crystals which were excited by nanoseconal pulses of high-current-density electrons and by two-photon absorption of the ultraviolet harmonics of pulsed laser radiation beams of nanosecond and picosecond duration. The

Introduction to the theory of low-energy electron diffraction

International Nuclear Information System (INIS)

Fingerland, A.; Tomasek, M.

1975-01-01

An elementary introduction to the basic principles of the theory of low-energy electron diffraction is presented. General scattering theory is used to classify the hitherto known approaches to the problem (optical potential and one-electron approximation; formal scattering theory: Born expansion and multiple scattering; translational symmetry: Ewald construction; classification of LEED theories by means of the T matrix; pseudokinematical theory for crystal with clean surface and with an adsorbed monomolecular layer; dynamical theory; inclusion of inelastic collisions; discussion of a simple example by means of the band-structure approach)

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

Wide applicability of high-Tc pairing originating from coexisting wide and incipient narrow bands in quasi-one-dimensional systems

Science.gov (United States)

Matsumoto, Karin; Ogura, Daisuke; Kuroki, Kazuhiko

2018-01-01

We study superconductivity in the Hubbard model on various quasi-one-dimensional lattices with coexisting wide and narrow bands originating from multiple sites within a unit cell, where each site corresponds to a single orbital. The systems studied are the two-leg and three-leg ladders, the diamond chain, and the crisscross ladder. These one-dimensional lattices are weakly coupled to form two-dimensional (quasi-one-dimensional) ones, and the fluctuation exchange approximation is adopted to study spin-fluctuation-mediated superconductivity. When one of the bands is perfectly flat and the Fermi level intersecting the wide band is placed in the vicinity of, but not within, the flat band, superconductivity arising from the interband scattering processes is found to be strongly enhanced owing to the combination of the light electron mass of the wide band and the strong pairing interaction due to the large density of states of the flat band. Even when the narrow band has finite bandwidth, the pairing mechanism still works since the edge of the narrow band, due to its large density of states, plays the role of the flat band. The results indicate the wide applicability of the high-Tc pairing mechanism due to coexisting wide and "incipient" narrow bands in quasi-one-dimensional systems.

Observation of electron multiplication in liquid xenon with a microstrip plate

International Nuclear Information System (INIS)

Policarpo, A.P.L.; Geltenbort, P.; Ferreira Marques, R.; Araujo, H.; Fraga, F.; Alves, M.A.; Fonte, P.; Lima, E.P.; Fraga, M.M.; Salete Leite, M.; Silander, K.; Onofre, A.; Pinhao, J.M.

1995-01-01

We report here on the observation of electron multiplication in liquid xenon in a microstrip chamber with an amplification factor of the order of 10. The measurements were carried out at a temperature between 208 and 215 K (liquid density of about 2.7 g/cm 3 ). (orig.)

A rare combination of amniotic constriction band with osteogenesis imperfecta.

Science.gov (United States)

Shah, Krupa Hitesh; Shah, Hitesh

2015-11-11

Amniotic constriction bands and osteogenesis imperfecta are disorders arising from a collagen defect. We report a rare association of amniotic bands with osteogenesis imperfecta in a child. The child was born with multiple amniotic bands involving the right leg, both hands and both feet. Multiple fractures of long bones of lower limbs occurred in childhood due to trivial trauma. Deformities of the femur and tibia due to malunion with osteopenia and blue sclerae were present. The patient was treated with z plasty of constriction band of the right tibia and bisphosphonate for osteogenesis imperfecta. This rare association of both collagen diseases may provide further insight for the pathogenesis of these diseases. 2015 BMJ Publishing Group Ltd.

Multiple approaches for enhancing all-organic electronics photoluminescent sensors: Simultaneous oxygen and pH monitoring

International Nuclear Information System (INIS)

Liu, Rui; Xiao, Teng; Cui, Weipan; Shinar, Joseph; Shinar, Ruth

2013-01-01

Graphical abstract: -- Highlights: •Novel simply-fabricated all-organic electronics pH and oxygen optical monitor. •Excitation sources: directionally emitting, narrowed multicolor microcavity OLEDs. •Photodetectors: small molecule- or polymer-based with selective spectral responses. •Sensor film: structured high molecular weight polystyrene:polyethylene glycol blend. •×1.9 sensitivity enhancement and ×2.7 increase in the photoluminescence for oxygen. -- Abstract: Key issues in using organic light emitting diodes (OLEDs) as excitation sources in structurally integrated photoluminescence (PL)-based sensors are the low forward light outcoupling, the OLEDs’ broad electroluminescence (EL) bands, and the long-lived remnant EL that follows an EL pulse. The outcoupling issue limits the detection sensitivity (S) as only ∼20% of the light generated within standard OLEDs can be forward outcoupled and used for sensor probe excitation. The EL broad band interferes with the analyte-sensitive PL, leading to a background that reduces S and dynamic range. In particular, these issues hinder designing compact sensors, potentially miniaturizable, that are devoid of optical filters and couplers. We address these shortcomings by introducing easy-to-employ multiple approaches for outcoupling improvement, PL enhancement, and background EL reduction leading to novel, compact all-organic device architectures demonstrated for simultaneous monitoring of oxygen and pH. The sensor comprises simply-fabricated, directionally-emitting, narrower-band, multicolor microcavity OLED excitation and small molecule- and polymer-based organic photodetectors (OPDs) with a more selective spectral response. Additionally, S and PL intensity for oxygen are enhanced by using polystyrene (PS):polyethylene glycol (PEG) blends as the sensing film matrix. By utilizing higher molecular weight PS, the ratio τ 0 /τ 100 (PL decay time τ at 0% O 2 /τ at 100% O 2 ) that is often used to express S

Origin of Hund's multiplicity rule in quasi-two-dimensional two-electron quantum dots

International Nuclear Information System (INIS)

Sako, Tokuei; Paldus, Josef; Diercksen, Geerd H. F.

2010-01-01

The origin of Hund's multiplicity rules has been studied for a system of two electrons confined by a quasi-two-dimensional harmonic-oscillator potential by relying on a full configuration interaction wave function and Cartesian anisotropic Gaussian basis sets. In terms of appropriate normal-mode coordinates the wave function factors into a product of the center-of-mass and the internal components. The 1 Π u singlet state and the 3 Π u triplet state represent the energetically lowest pair of states to which Hund's multiplicity rule applies. They are shown to involve excitations into different degrees of freedom, namely, into the center-of-mass angular mode and the internal angular mode for the singlet and triplet states, respectively. The presence of an angular nodal line in the internal space allows then the triplet state to avoid the singularity in the electron-electron interaction potential, leading to the energy lowering of the triplet state relative to its counterpart singlet state.

Impurity band Mott insulators: a new route to high Tc superconductivity

Directory of Open Access Journals (Sweden)

Ganapathy Baskaran

2008-01-01

Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

Multiple approaches for enhancing all-organic electronics photoluminescent sensors: Simultaneous oxygen and pH monitoring

Energy Technology Data Exchange (ETDEWEB)

Liu, Rui; Xiao, Teng; Cui, Weipan [Ames Laboratory-USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Shinar, Joseph, E-mail: jshinar@iastate.edu [Ames Laboratory-USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Shinar, Ruth, E-mail: rshinar@iastate.edu [Microelectronics Research Center and Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011 (United States)

2013-05-17

Graphical abstract: -- Highlights: •Novel simply-fabricated all-organic electronics pH and oxygen optical monitor. •Excitation sources: directionally emitting, narrowed multicolor microcavity OLEDs. •Photodetectors: small molecule- or polymer-based with selective spectral responses. •Sensor film: structured high molecular weight polystyrene:polyethylene glycol blend. •×1.9 sensitivity enhancement and ×2.7 increase in the photoluminescence for oxygen. -- Abstract: Key issues in using organic light emitting diodes (OLEDs) as excitation sources in structurally integrated photoluminescence (PL)-based sensors are the low forward light outcoupling, the OLEDs’ broad electroluminescence (EL) bands, and the long-lived remnant EL that follows an EL pulse. The outcoupling issue limits the detection sensitivity (S) as only ∼20% of the light generated within standard OLEDs can be forward outcoupled and used for sensor probe excitation. The EL broad band interferes with the analyte-sensitive PL, leading to a background that reduces S and dynamic range. In particular, these issues hinder designing compact sensors, potentially miniaturizable, that are devoid of optical filters and couplers. We address these shortcomings by introducing easy-to-employ multiple approaches for outcoupling improvement, PL enhancement, and background EL reduction leading to novel, compact all-organic device architectures demonstrated for simultaneous monitoring of oxygen and pH. The sensor comprises simply-fabricated, directionally-emitting, narrower-band, multicolor microcavity OLED excitation and small molecule- and polymer-based organic photodetectors (OPDs) with a more selective spectral response. Additionally, S and PL intensity for oxygen are enhanced by using polystyrene (PS):polyethylene glycol (PEG) blends as the sensing film matrix. By utilizing higher molecular weight PS, the ratio τ{sub 0}/τ{sub 100} (PL decay time τ at 0% O{sub 2}/τ at 100% O{sub 2}) that is often used

Fluorescence excitation involving multiple electron transition states of N{sub 2} and CO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Wu, C.Y.R.; Chen, F.Z.; Hung, T.; Judge, D.L. [Univ. of Southern California, Los Angeles, CA (United States)

1997-04-01

The electronic states and electronic structures of N{sub 2} and CO{sub 2} in the 8-50 eV energy region have been studied extensively both experimentally and theoretically. In the energy region higher than 25 eV there exists many electronic states including multiple electron transition (MET) states which are responsible for producing most of the dissociative photoionization products. The electronic states at energies higher than 50 eV have been mainly determined by Auger spectroscopy, double charge transfer, photofragment spectroscopy and ion-ion coincidence spectroscopy. The absorption and ionization spectra of these molecules at energies higher than 50 eV mainly show a monotonic decrease in cross section values and exhibit structureless features. The decay channels of MET and Rydberg (or superexcited) states include autoionization, ionization, dissociative ionization, predissociation, and dissociation while those of single ion and multiple ion states may involve predissociation. and dissociation processes. The study of fluorescence specifically probes electronically excited species resulting from the above-mentioned decay channels and provides information for understanding the competition among these channels.

iDEEAA: A novel, versatile apparatus for electron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lupulescu, C., E-mail: cosmin.lupulescu@helmholtz-berlin.de [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Arion, T. [Centre for Free-Electron Laser Science (DESY), Notkestrasse 85, 22607 Hamburg (Germany); Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany); Hergenhahn, U. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Teilinstitut Greifswald, Wendelsteinstr. 1, 17491 Greifswald (Germany); Ovsyannikov, R. [Helmholtz-Zentrum Berlin, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Förstel, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Teilinstitut Greifswald, Wendelsteinstr. 1, 17491 Greifswald (Germany); Gavrila, G. [Technische Universität Chemnitz, Fakultät Elektrotechnik und Informationstechnik, Reichenhainer Str. 70, 09126 Chemnitz (Germany); Eberhardt, W. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Centre for Free-Electron Laser Science (DESY), Notkestrasse 85, 22607 Hamburg (Germany)

2013-12-15

Highlights: •We developed an experimental end station for time- and angle-resolved X-ray electron spectroscopy. •The instrument can operate in combination with synchrotron radiation, VUV Helium discharge source or table-top high-harmonic laser sources. •Band mapping in solids is possible with unprecedented rapidity. •Electron–electron coincidence spectroscopy is performed at higher data collection rate (due to improved transmission) and with improved energy resolution. -- Abstract: We report the development and present status of the iDEEAA (Instrument for Direct Electron Energy and Angular Analysis) experimental end station for time- and angle-resolved X-ray photoelectron spectroscopy. The setup is based on multidimensional detection of photoelectrons by means of both time-of-flight (TOF) and/or electrostatic analyzers. The instrument offers the possibility to record simultaneously and independently photoelectron and Auger electron spectra. Samples can be either gases or solids. The system can operate with multiple photon sources, such as laboratory-based table-top laser extreme ultraviolet (EUV) sources, monochromatic Helium discharge lamp and soft X-ray synchrotron pulses. We demonstrate the performance of the setup by carrying out electron–electron coincidence experiments on CH{sub 4} and by mapping the band structure of Bi{sub 2}Se{sub 3} using photons of the BESSY II electron storage ring.

Trans-thoracic peri-oesophageal adjustable band for intractable reflux

OpenAIRE

Mark Simon X. Kusel; Jeremy T.H. Tan

2015-01-01

Introduction: Gastric bands for obesity have the beneficial side-effect of improving reflux symptoms in patients; however placement of these on patients with multiple prior abdominal surgeries can be challenging. Presentation of case: We present two cases where gastric bands were placed in a peri-oesophageal position via a left thoracotomy due to multiple previous abdominal surgeries in an attempt to treat their intractable reflux. Discussion: At three month follow up, both patients hav...

Change in optimum genetic algorithm solution with changing band discontinuities and band widths of electrically conducting copolymers

Science.gov (United States)

Kaur, Avneet; Bakhshi, A. K.

2010-04-01

The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.

Electronic structure of germanium selenide investigated using ultra-violet photo-electron spectroscopy

Science.gov (United States)

Mishra, P.; Lohani, H.; Kundu, A. K.; Patel, R.; Solanki, G. K.; Menon, Krishnakumar S. R.; Sekhar, B. R.

2015-07-01

The valence band electronic structure of GeSe single crystals has been investigated using angle resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy. The experimentally observed bands from ARPES, match qualitatively with our LDA-based band structure calculations along the Γ-Z, Γ-Y and Γ-T symmetry directions. The valence band maximum occurs nearly midway along the Γ-Z direction, at a binding energy of -0.5 eV, substantiating the indirect band gap of GeSe. Non-dispersive features associated with surface states and indirect transitions have been observed. The difference in hybridization of Se and Ge 4p orbitals leads to the variation of dispersion along the three symmetry directions. The predominance of the Se 4pz orbitals, evidenced from theoretical calculations, may be the cause for highly dispersive bands along the Γ-T direction. Detailed electronic structure analysis reveals the significance of the cation-anion 4p orbitals hybridization in the valence band dispersion of IV-VI semiconductors. This is the first comprehensive report of the electronic structure of a GeSe single crystal using ARPES in conjugation with theoretical band structure analysis.

Electronic structure of germanium selenide investigated using ultra-violet photo-electron spectroscopy

International Nuclear Information System (INIS)

Mishra, P; Lohani, H; Sekhar, B R; Kundu, A K; Menon, Krishnakumar S R; Patel, R; Solanki, G K

2015-01-01

The valence band electronic structure of GeSe single crystals has been investigated using angle resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy. The experimentally observed bands from ARPES, match qualitatively with our LDA-based band structure calculations along the Γ–Z, Γ–Y and Γ–T symmetry directions. The valence band maximum occurs nearly midway along the Γ–Z direction, at a binding energy of −0.5 eV, substantiating the indirect band gap of GeSe. Non-dispersive features associated with surface states and indirect transitions have been observed. The difference in hybridization of Se and Ge 4p orbitals leads to the variation of dispersion along the three symmetry directions. The predominance of the Se 4p z orbitals, evidenced from theoretical calculations, may be the cause for highly dispersive bands along the Γ–T direction. Detailed electronic structure analysis reveals the significance of the cation–anion 4p orbitals hybridization in the valence band dispersion of IV–VI semiconductors. This is the first comprehensive report of the electronic structure of a GeSe single crystal using ARPES in conjugation with theoretical band structure analysis. (paper)

Band magnetism due to f-electrons

International Nuclear Information System (INIS)

Brodsky, M.B.; Trainor, R.J.

1976-01-01

Specific heat data illustrate several types of itinerant or band magnetism in actinide intermetallic compounds. The results show ferromagnetic spin fluctuations in UAl 2 with T/sub sf/ equals 25K, itinerant antiferromagnetism in NpSn 3 with T/sub N/ equals 9.5K and itinerant ferromagnetism in NpOs 2 with T/sub C/ equals 7.9K. Specific heat studies of dilute U/sub 1-x/Th/sub x/Al 2 show the theoretically predicted modifications due to impurity scattering in a spin fluctuation system. For NpSn 3 it is possible to show the BCS nature of the transition due to the gap formation

Electronic structure of single- and multiple-shell carbon fullerenes

International Nuclear Information System (INIS)

Lin, Y.; Nori, F.

1994-01-01

We study the electronic states of giant single-shell and the recently discovered nested multiple-shell carbon fullerenes within the tight-binding approximation. We use two different approaches, one based on iterations and the other on symmetry, to obtain the π-state energy spectra of large fullerene cages: C 240 , C 540 , C 960 , C 1500 , C 2160 , and C 2940 . Our iteration technique reduces the size of the problem by more than one order of magnitude (factors of ∼12 and 20), while the symmetry-based approach reduces it by a factor of 10. We also find formulas for the highest occupied and lowest unoccupied molecular orbital energies of C 60n 2 fullerenes as a function of n, demonstrating a tendency towards a metallic regime for increasing n. For multiple-shell fullerenes, we analytically obtain the eigenvalues of the intershell interaction

Long-term effects of flipper bands on penguins

Science.gov (United States)

Gauthier-Clerc, M.; Gendner, J.-P.; Ribic, C.A.; Fraser, William R.; Woehler, Eric J.; Descamps, S.; Gilly, C.; Le, Bohec C.; Le, Maho Y.

2004-01-01

Changes in seabird populations, and particularly of penguins, offer a unique opportunity for investigating the impact of fisheries and climatic variations on marine resources. Such investigations often require large-scale banding to identify individual birds, but the significance of the data relies on the assumption that no bias is introduced in this type of long-term monitoring. After 5 years of using an automated system of identification of king penguins implanted with electronic tags (100 adult king penguins were implanted with a transponder tag, 50 of which were also flipper banded), we can report that banding results in later arrival at the colony for courtship in some years, lower breeding probability and lower chick production. We also found that the survival rate of unbanded, electronically tagged king penguin chicks after 2-3 years is approximately twice as large as that reported in the literature for banded chicks. ?? 2004 The Royal Society.

The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

OpenAIRE

Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

2012-01-01

The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefe...

S-band multiple-access interference study for advanced tracking and data relay satellite systems

Science.gov (United States)

Peng, Wei-Chung; Yang, Chau-Chin

1990-01-01

The results of a study on the effect of mutual interference among S-band multiple access (SMA) system users of advanced tracking and data relay satellite system (ATDRSS) are presented. In the ATDRSS era, the SMA system is required to support data rates ranging from 10 kb/s to 3 Mb/s. The system will consist of four advanced tracking and data relay satellites (ATDRS) each supporting up to five telemetry links. All users have 10 MHz bandwidth with their carrier frequency equal to 2.2875 GHz. A hybrid SDMA/CDMA scheme is used to mitigate the effect of the interference among system users. SMA system interference probability is evaluated with CLASS software. User link margin degradation due to mutual interference between two users is evaluated. System interference probability is evaluated for the projected 1996 mission model, a reference mission model, and a modified reference mission model.

Interplay between electron-phonon and electron-electron interactions

International Nuclear Information System (INIS)

Roesch, O.; Gunnarsson, O.; Han, J.E.; Crespi, V.H.

2005-01-01

We discuss the interplay between electron-electron and electron-phonon interactions for alkali-doped fullerides and high temperature superconductors. Due to the similarity of the electron and phonon energy scales, retardation effects are small for fullerides. This raises questions about the origin of superconductivity, since retardation effects are believed to be crucial for reducing effects of the Coulomb repulsion in conventional superconductors. We demonstrate that by treating the electron-electron and electron-phonon interactions on an equal footing, superconductivity can be understood in terms of a local pairing. The Jahn-Teller character of the important phonons in fullerides plays a crucial role for this result. To describe effects of phonons in cuprates, we derive a t-J model with phonons from the three-band model. Using exact diagonalization for small clusters, we find that the anomalous softening of the half-breathing phonon as well as its doping dependence can be explained. By comparing the solution of the t-J model with the Hartree-Fock approximation for the three-band model, we address results obtained in the local-density approximation for cuprates. We find that genuine many-body results, due to the interplay between the electron-electron and electron-phonon interactions, play an important role for the the results in the t-J model. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The assignment of dissociative electron attachment bands in compounds containing hydroxyl and amino groups

International Nuclear Information System (INIS)

Skalicky, Tomas; Allan, Michael

2004-01-01

Dissociative electron attachment (DEA) spectra were recorded for methanol, phenol, diethylamine, tetramethylhydrazine, piperazine, pyrrole and N,N-dimethylaniline. Comparison with He I photoelectron spectra permitted the assignment of virtually all DEA bands in the saturated compounds to core excited Feshbach resonances with double occupation of Rydberg-like orbitals and various Koopmans' states of the positive ion as a core. These resonances shift to lower energies with alkyl substitution, in contrast to the shape resonances, and are found at surprisingly low energies in the amines. The DEA spectra in the unsaturated compounds show no or only weak evidence for the Rydberg-type Feshbach resonances. It is proposed that DEA in saturated polyatomic molecules containing hydroxyl and amino groups is in general dominated by this type of resonance

Dissociative multiple ionization of diatomic molecules by extreme-ultraviolet free-electron-laser pulses

DEFF Research Database (Denmark)

Madsen, Lars Bojer; Leth, Henriette Astrup

2011-01-01

Nuclear dynamics in dissociative multiple ionization processes of diatomic molecules exposed to extreme-ultraviolet free-electron-laser pulses is studied theoretically using the Monte Carlo wave packet approach. By simulated detection of the emitted electrons, the model reduces a full propagation...... of the system to propagations of the nuclear wave packet in one specific electronic charge state at a time. Suggested ionization channels can be examined, and kinetic energy release spectra for the nuclei can be calculated and compared with experiments. Double ionization of O2 is studied as an example, and good...

Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly

Science.gov (United States)

Subramaniam, Girija; Blank, Shannon

2005-01-01

The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.

Measurement of valence band structure in arbitrary dielectric films

International Nuclear Information System (INIS)

Uhm, Han S.; Choi, Eun H.

2012-01-01

A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

Origin of Spectral Band Patterns in the Cosmic Unidentified Infrared Emission

Science.gov (United States)

Álvaro Galué, Héctor; Díaz Leines, Grisell

2017-10-01

The cosmic unidentified infrared emission (UIE) band phenomenon is generally considered as indicative of free-flying polycyclic aromatic hydrocarbon molecules in space. However, a coherent explanation of emission spectral band patterns depending on astrophysical source is yet to be resolved under this attribution. Meanwhile astronomers have restored the alternative origin as due to amorphous carbon particles, but assigning spectral patterns to specific structural elements of particles is equally challenging. Here we report a physical principle in which inclusion of nonplanar structural defects in aromatic core molecular structures (π domains) induces spectral patterns typical of the phenomenon. We show that defects in model π domains modulate the electronic-vibration coupling that activates the delocalized π -electron contribution to aromatic vibrational modes. The modulation naturally disperses C =C stretch modes in band patterns that readily resemble the UIE bands in the elusive 6 - 9 μ m range. The electron-vibration interaction mechanics governing the defect-induced band patterns underscores the importance of π delocalization in the emergence of UIE bands. We discuss the global UIE band regularity of this range as compatible with an emission from the delocalized s p2 phase, as π domains, confined in disordered carbon mixed-phase aggregates.

Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

International Nuclear Information System (INIS)

Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

2014-01-01

We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

Electronic structure of the copper oxides: Band picture versus correlated behavior

Energy Technology Data Exchange (ETDEWEB)

Pickett, W E; Cohen, R E; Singh, D [Naval Research Lab., Washington, DC (USA); Krakauer, H [Coll. of William and Mary, Williamsburg, VA (USA)

1989-12-01

In the 2 1/2 years since the discovery of the high temperature superconducting copper oxides, a great deal has been learned from experiment about their behavior. From the theoretical side, there continues to be developments both within the band picture and from the model Hamiltonian viewpoint emphasizing correlations. In this paper we discuss briefly these complementary viewpoints in relation to certain of the experimental data. Due to our background in the band structure area, we approach the discussion by evaluating which phenomena can be (or has been) accounted for by the standard band approach, and point out which properties appear to require more intricate treatments of correlation. (orig.).

Electronic structure of the Zn(O,S)/Cu(In,Ga)Se₂ thin-film solar cell interface

Energy Technology Data Exchange (ETDEWEB)

Mezher, Michelle [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Garris, Rebekah [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Mansfield, Lorelle M. [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Horsley, Kimberly [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Weinhardt, Lothar [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe Germany; Duncan, Douglas A. [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Blum, Monika [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Rosenberg, Samantha G. [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Bär, Marcus [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin Germany; Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus Germany; Ramanathan, Kannan [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Heske, Clemens [Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas NV 89154 USA; Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen Germany; Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe Germany

2016-03-10

The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 +/- 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe.

Multiple Etalon Systems for the Advanced Technology Solar Telescope

Science.gov (United States)

Gary, G. Allen; Balasubramaniam, K. S.; Sigwarth, Michael; Six, N. Frank (Technical Monitor)

2002-01-01

Multiple etalons systems are discussed that meet the 4-meter NSO/Advance Technology Solar Telescope (http://www.nso.edu/ATST/index.html) instrument and science requirements for a narrow bandpass imaging system. A multiple etalon system can provide an imaging interferometer working in four distinct modes: as a spectro-polarimeter, a filter-vector magnetograph, and a wide-band and broad-band high-resolution imager. Specific dual and triple etalon configurations will be described that provides spectrographic passband of 2.0-3.5nm and reduces parasitic light levels to 1/10000 as required by precise polarization measurement, e.g., Zeeman measurements of magnetic sensitive lines. A TESOS-like triple etalon system provides for spectral purity of 100 thousandths. The triple designs have the advantage of reducing the finesse requirement on each etalon, allowing much more stable blocking filters, and can have very high spectral purity. A dual-etalon double-pass Cavallini-like configuration can provide a competing configuration. This design can provide high contrast with only a double etalon. The selection of the final focal plan instrument will depend on a trade-off of the ideal instrument versus reality, the number of etalons, the aperture of etalons, the number of blocking filters the electronic control system and computer interfaces, the temperature control and controllers for the etalons and the electronics. The use of existing experience should provide significant cost savings. The heritage of use of etalons and multiple etalon systems in solar physics come from a number of observatories, which includes MSFC Solar Observatory (NASA), Sac Peak Observatory (NSO), and Kiepenheuer Institute for Solar Physics (Germany), Mees Solar Observatory (University of Hawaii), and Arcetri Astrophysical Observatory (Italy). The design of the ATST multiple etalon system will reply on the existing experience from these observatories.

Constructing a two bands optical code-division multiple-access network of bipolar optical access codecs using Walsh-coded liquid crystal modulators

Science.gov (United States)

Yen, Chih-Ta; Huang, Jen-Fa; Chih, Ping-En

2014-08-01

We propose and experimentally demonstrated the two bands optical code-division multiple-access (OCDMA) network over bipolar Walsh-coded liquid-crystal modulators (LCMs) and driven by green light and red light lasers. Achieving system performance depends on the construction of a decoder that implements a true bipolar correlation using only unipolar signals and intensity detection for each band. We took advantage of the phase delay characteristics of LCMs to construct a prototype optical coder/decoder (codec). Matched and unmatched Walsh signature codes were evaluated to detect correlations among multiuser data in the access network. By using LCMs, a red and green laser light source was spectrally encoded and the summed light dots were complementary decoded. Favorable contrast on auto- and cross-correlations indicates that binary information symbols can be properly recovered using a balanced photodetector.

Electron momentum spectroscopy of the core state of solid carbon

International Nuclear Information System (INIS)

Caprari, R.S.; Clark, S.A.C.; McCarthy, I.E.; Storer, P.J.; Vos, M.; Weigold, E.

1994-08-01

Electron momentum spectroscopy (binary encounter (e,2e)) experimental results are presented for the core state of an amorphous carbon allotrope. The (e,2e) cross section has two identifiable regions. One is a narrow energy width 'core band peak' that does not disperse with momentum. At higher binding energies there is an energy diffuse 'multiple scattering continuum', which is a consequence of (e,2e) collisions with core electrons that are accompanied by inelastic scattering of one or more of the incoming or outgoing electrons. Comparisons of experimental momentum distributions with the Hartree-Fock atomic carbon ls orbital are presented for both regions. 16 refs., 4 figs

Band gap opening in α-graphyne by adsorption of organic molecule

Science.gov (United States)

Majidi, R.; Karami, A. R.

2014-09-01

The lack of a band gap limits the application of graphyne in nanoelectronic devices. We have investigated possibility of opening a band gap in α-graphyne by adsorption of tetracyanoethylene. The electronic property of α-graphyne in the presence of different numbers of tetracyanoethylene has been studied using density functional theory. It is found that charge is transferred from graphyne sheet to tetracyanoethylene molecules. In the presence of this electron acceptor molecule, a semimetal α-graphyne shows semiconducting property. The energy band gap at the Dirac point is enhanced by increasing the number of tetracyanoethylene. Our results provide a simple method to create and control the band gap in α-graphyne.

Conduction band edge effective mass of La-doped BaSnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

James Allen, S., E-mail: allen@itst.ucsb.edu; Law, Ka-Ming [Physics Department, University of California, Santa Barbara, California 93106-5100 (United States); Raghavan, Santosh; Schumann, Timo; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-06-20

BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.

Multiple-electron removal and molecular fragmentation of CO by fast F4+ impact

International Nuclear Information System (INIS)

Ben-Itzhak, I.; Ginther, S.G.; Carnes, K.D.

1993-01-01

Multiple-electron removal from and molecular fragmentation of carbon monoxide molecules caused by collisions with 1-MeV/amu F 4+ ions were studied using the coincidence time-of-flight technique. In these collisions, multiple-electron removal of the target molecule is a dominant process. Cross sections for the different levels of ionization of the CO molecule during the collision were determined. The relative cross sections of ionization decrease with increasing number of electrons removed in a similar way as seen in atomic targets. This behavior is in agreement with a two-step mechanism, where first the molecule is ionized by a Franck-Condon ionization and then the molecular ion dissociates. Most of the highly charged intermediate states of the molecule dissociate rapidly. Only CO + and CO 2+ molecular ions have been seen to survive long enough to be detected as molecular ions. The relative cross sections for the different breakup channels were evaluated for collisions in which the molecule broke into two charged fragments as well as for collisions where only a single charged molecular ion or fragment were produced. The average charge state of each fragment resulting from CO Q+ →C i+ +O j+ breakup increases with the number of electrons removed from the molecule approximately following the relationship bar i=bar j=Q/2 as long as K-shell electrons are not removed. This does not mean that the charge-state distribution is exactly symmetric, as, in general, removing electrons from the carbon fragment is slightly more likely than removing electrons from the oxygen due to the difference in binding energy. The cross sections for molecular breakup into a charged fragment and a neutral fragment drop rapidly with an increasing number of electrons removed

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Science.gov (United States)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

2015-06-01

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

International Nuclear Information System (INIS)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

2015-01-01

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

2015-06-21

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

Planar C-Band Antenna with Electronically Controllable Switched Beams

Directory of Open Access Journals (Sweden)

Mariano Barba

2009-01-01

Full Text Available The design, manufacturing, and measurements of a switchable-beam antenna at 3.5 GHz for WLL or Wimax base station antennas in planar technology are presented. This antenna performs a discrete beam scan of a 60∘ sector in azimuth and can be easily upgraded to 5 or more steps. The switching capabilities have been implemented by the inclusion of phase shifters based on PIN diodes in the feed network following a strategy that allows the reduction of the number of switches compared to a classic design. The measurements show that the design objectives have been achieved and encourage the application of the acquired experience in antennas for space applications, such as X-band SAR and Ku-band DBS.

Metal-like Band Structures of Ultrathin Si {111} and {112} Surface Layers Revealed through Density Functional Theory Calculations.

Science.gov (United States)

Tan, Chih-Shan; Huang, Michael H

2017-09-04

Density functional theory calculations have been performed on Si (100), (110), (111), and (112) planes with tunable number of planes for evaluation of their band structures and density of states profiles. The purpose is to see whether silicon can exhibit facet-dependent properties derived from the presence of a thin surface layer having different band structures. No changes have been observed for single to multiple layers of Si (100) and (110) planes with a consistent band gap between the valence band and the conduction band. However, for 1, 2, 4, and 5 Si (111) and (112) planes, metal-like band structures were obtained with continuous density of states going from the valence band to the conduction band. For 3, 6, and more Si (111) planes, as well as 3 and 6 Si (112) planes, the same band structure as that seen for Si (100) and (110) planes has been obtained. Thus, beyond a layer thickness of five Si (111) planes at ≈1.6 nm, normal semiconductor behavior can be expected. The emergence of metal-like band structures for the Si (111) and (112) planes are related to variation in Si-Si bond length and bond distortion plus 3s and 3p orbital electron contributions in the band structure. This work predicts possession of facet-dependent electrical properties of silicon with consequences in FinFET transistor design. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

X-band RF power sources for accelerator applications

International Nuclear Information System (INIS)

Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

2011-01-01

The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

Health Risks Faced by Public School Band Directors

Science.gov (United States)

Woolery, Danielle N.; Woolery, Jesse A.

2013-01-01

Public school band directors face many work-related hazards in their grueling, yet rewarding job. As a school year progresses, directors are expected to work long hours, while trying to balance professional and personal responsibilities. A band director whose career spans multiple decades can potentially face a number of serious medical problems.…

Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

International Nuclear Information System (INIS)

Wang, Ling; Bao, Xichang; Zhang, Wenjing; Li, Chao; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

2009-01-01

Dark current is critical for GaN-based avalanche photodiodes because it significantly increases the noise current and limits the multiplication factor. It has been found that the band-to-band tunneling current is the dominant origin of the dark current for avalanche photodiodes at the onset of breakdown voltage. Experimentally, for GaN-based avalanche photodiodes with a thinner intrinsic layer, the dark current increases nearly exponentially with the applied voltage even at a lower bias voltage. In this paper, the intrinsic layer (i-layer) width of GaN-based avalanche photodiodes has been varied to study its effect on the band-to-band tunneling current. A widely used equation was used to calculate the band-to-band tunneling current of avalanche photodiodes with different i-layer widths (i-layer 0.1 µm, 0.2 µm and 0.4 µm). At −40 V, the band-to-band tunneling current significantly reduces by a magnitude of 10 −15 A with an increase in the i-layer width from 0.1 µm to 0.2 µm, and a magnitude of 10 −29 A with an increase in the i-layer width from 0.2 µm to 0.4 µm. Then, GaN-based avalanche photodiodes (i-layer 0.1 µm, 0.2 µm and 0.4 µm) with different-sized mesa were fabricated. Also, the measurement of dark current of all three different structures was performed, and their multiplication factors were given

Magnetospheric Response Associated With Multiple Atmospheric Reflections of Precipitated Electrons in Aurora.

Science.gov (United States)

Khazanov, G. V.; Merkin, V. G.; Zesta, E.; Sibeck, D. G.; Grubbs, G. A., II; Chu, M.; Wiltberger, M. J.

2017-12-01

The magnetosphere and ionosphere are strongly coupled by precipitating electrons during storm times. Therefore, first principle simulations of precipitating electron fluxes are required to understand storm time variations of ionospheric conductances and related electric fields. As has been discussed by Khazanov et al. [2015 - 2017], the first step in such simulations is initiation of electron precipitation from the Earth's plasma sheet via wave particle interaction processes into both magnetically conjugate points, and the step 2 is the follow up of multiple atmospheric reflections of electron fluxes formed at the boundary between the ionosphere and magnetosphere of two magnetically conjugate points. To demonstrate this effect on the global magnetospheric response the Lyon-Fedder-Mobarry global magnetosphere model coupled with the Rice Convection Model of the inner magnetosphere has been used and run for the geomagnetic storm of 17 March 2013.

Electron energies in metals

International Nuclear Information System (INIS)

Mahan, G.D.; Tennessee Univ., Knoxville, TN

1991-01-01

The modern era of electron-electron interactions began a decade ago. Plummer's group initiated a program of using angular resolved photoemission to examine the band structure of the simple metals. Beginning with aluminum, and carrying on to sodium and potassium, they always found that the occupied energy bands were much narrower than expected. For example, the compressed energy bands for metallic potassium suggest a band effective mass of m* = 1.33m e . This should be compared to the band mass found from optical conductivity m*/m e = 1.01 ± 0.01. The discrepancy between these results is startling. It was this great difference which started my group doing calculations. Our program was two-fold. On one hand, we reanalyzed the experimental data, in order to see if Plummer's result was an experimental artifact. On the other hand, we completely redid the electron-electron self-energy calculations for simple metals, using the most modern choices of local-field corrections and vertex corrections. Our results will be reported in these lectures. They can be summarized as following: Our calculations give the same effective masses as the older calculations, so the theory is relatively unchanged; Our analysis of the experiments suggests that the recent measurements of band narrowing are an experimental artifact. 38 refs., 9 figs

Surface-electronic-state effects in electron emission from the Be(0001) surface

International Nuclear Information System (INIS)

Archubi, C. D.; Gravielle, M. S.; Silkin, V. M.

2011-01-01

We study the electron emission produced by swift protons impinging grazingly on a Be(0001) surface. The process is described within a collisional formalism using the band-structure-based (BSB) approximation to represent the electron-surface interaction. The BSB model provides an accurate description of the electronic band structure of the solid and the surface-induced potential. Within this approach we derive both bulk and surface electronic states, with these latter characterized by a strong localization at the crystal surface. We found that such surface electronic states play an important role in double-differential energy- and angle-resolved electron emission probabilities, producing noticeable structures in the electron emission spectra.

Surface-electronic-state effects in electron emission from the Be(0001) surface

Energy Technology Data Exchange (ETDEWEB)

Archubi, C. D. [Instituto de Astronomia y Fisica del Espacio, casilla de correo 67, sucursal 28, C1428EGA, Buenos Aires (Argentina); Gravielle, M. S. [Instituto de Astronomia y Fisica del Espacio, casilla de correo 67, sucursal 28, C1428EGA, Buenos Aires (Argentina); Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires (Argentina); Silkin, V. M. [Donostia International Physics Center, E-20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, Universidad del Pais Vasco, Apartado 1072, E-20080 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao (Spain)

2011-07-15

We study the electron emission produced by swift protons impinging grazingly on a Be(0001) surface. The process is described within a collisional formalism using the band-structure-based (BSB) approximation to represent the electron-surface interaction. The BSB model provides an accurate description of the electronic band structure of the solid and the surface-induced potential. Within this approach we derive both bulk and surface electronic states, with these latter characterized by a strong localization at the crystal surface. We found that such surface electronic states play an important role in double-differential energy- and angle-resolved electron emission probabilities, producing noticeable structures in the electron emission spectra.

Temperature dependence of Q-band electron paramagnetic resonance spectra of nitrosyl heme proteins

Energy Technology Data Exchange (ETDEWEB)

Flores, Marco; Wajnberg, Eliane; Bemski, George

1997-11-01

The Q-band (35 GHz) electron paramagnetic resonance (EPR) spectra of nitrosyl hemoglobin (Hb N O) and nitrosyl myoglobin (Mb NO) were studied as a function of temperature between 19 K and 200 K. The spectra of both heme proteins show classes of variations as a function of temperature. The first one has previously been associated with the existence of two paramagnetic species, one with rhombic and the other with axial symmetry. The second one manifests itself in changes in the g-factors and linewidths of each species. These changes are correlated with the conformational substates model and associate the variations of g-values with changes in the angle of the N(his)-Fe-N (NO) bond in the rhombic species and with changes in the distance between Fe and N of the proximal (F8) histidine in the axial species. (author) 24 refs., 6 figs.

Band gap engineering for graphene by using Na+ ions

International Nuclear Information System (INIS)

Sung, S. J.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Chung, J. W.

2014-01-01

Despite the noble electronic properties of graphene, its industrial application has been hindered mainly by the absence of a stable means of producing a band gap at the Dirac point (DP). We report a new route to open a band gap (E g ) at DP in a controlled way by depositing positively charged Na + ions on single layer graphene formed on 6H-SiC(0001) surface. The doping of low energy Na + ions is found to deplete the π* band of graphene above the DP, and simultaneously shift the DP downward away from Fermi energy indicating the opening of E g . The band gap increases with increasing Na + coverage with a maximum E g ≥0.70 eV. Our core-level data, C 1s, Na 2p, and Si 2p, consistently suggest that Na + ions do not intercalate through graphene, but produce a significant charge asymmetry among the carbon atoms of graphene to cause the opening of a band gap. We thus provide a reliable way of producing and tuning the band gap of graphene by using Na + ions, which may play a vital role in utilizing graphene in future nano-electronic devices.

Complete theory of symmetry-based indicators of band topology.

Science.gov (United States)

Po, Hoi Chun; Vishwanath, Ashvin; Watanabe, Haruki

2017-06-30

The interplay between symmetry and topology leads to a rich variety of electronic topological phases, protecting states such as the topological insulators and Dirac semimetals. Previous results, like the Fu-Kane parity criterion for inversion-symmetric topological insulators, demonstrate that symmetry labels can sometimes unambiguously indicate underlying band topology. Here we develop a systematic approach to expose all such symmetry-based indicators of band topology in all the 230 space groups. This is achieved by first developing an efficient way to represent band structures in terms of elementary basis states, and then isolating the topological ones by removing the subset of atomic insulators, defined by the existence of localized symmetric Wannier functions. Aside from encompassing all earlier results on such indicators, including in particular the notion of filling-enforced quantum band insulators, our theory identifies symmetry settings with previously hidden forms of band topology, and can be applied to the search for topological materials.Understanding the role of topology in determining electronic structure can lead to the discovery, or appreciation, of materials with exotic properties such as protected surface states. Here, the authors present a framework for identifying topologically distinct band-structures for all 3D space groups.

Longitudinal erythronychia: individual or multiple linear red bands of the nail plate: a review of clinical features and associated conditions.

Science.gov (United States)

Cohen, Philip R

2011-08-01

Longitudinal erythronychia is a linear red band on the nail plate that originates at the proximal nail fold, traverses the lunula, and extends to the free edge of the nail plate. Longitudinal erythronychia is classified based upon the number of nails affected and the number of red streaks present on each nail as follows: type Ia (monodactylous - single band), type Ib (monodactylous - bifid bands), type IIa (polydactylous - single band), and type IIb (polydactylous - multiple bands). Associated morphologic findings that can be present at the distal tip of the nail with longitudinal erythronychia include fragility, onycholysis, splinter hemorrhage, splitting, subungual keratosis, thinning, and V-shaped nick. Some patients with longitudinal erythronychia seek medical evaluation because of pain in the associated distal digit; however, the linear red nail plate dyschromia is often asymptomatic and the individual is concerned about the cosmetic appearance or distal nail fragility. Longitudinal erythronychia can be a clinical manifestation of an underlying local or systemic condition. Benign tumors (glomus tumor, onychopapilloma, and warty dyskeratoma), malignant neoplasms (malignant melanoma and squamous cell carcinoma), and other conditions (hemiplegia and postsurgical scar) can be associated with monodactylous longitudinal erythronychia or it may be idiopathic or the initial stage of polydactylous longitudinal erythronychia-associated systemic conditions. Polydactylous longitudinal erythronychia is most commonly reported in patients with Darier disease (keratosis follicularis); other associated conditions include acantholytic dyskeratotic epidermal nevus, acantholytic epidermolysis bullosa, acrokeratosis verruciformis of Hopf, amyloidosis, graft-versus-host disease, lichen planus, and pseudobulbar syndrome. Polydactylous longitudinal erythronychia has also been observed as an idiopathic finding. Biopsy of the nail matrix and nail bed may be necessary to establish the

Band structures in fractal grading porous phononic crystals

Science.gov (United States)

Wang, Kai; Liu, Ying; Liang, Tianshu; Wang, Bin

2018-05-01

In this paper, a new grading porous structure is introduced based on a Sierpinski triangle routine, and wave propagation in this fractal grading porous phononic crystal is investigated. The influences of fractal hierarchy and porosity on the band structures in fractal graidng porous phononic crystals are clarified. Vibration modes of unit cell at absolute band gap edges are given to manifest formation mechanism of absolute band gaps. The results show that absolute band gaps are easy to form in fractal structures comparatively to the normal ones with the same porosity. Structures with higher fractal hierarchies benefit multiple wider absolute band gaps. This work provides useful guidance in design of fractal porous phononic crystals.

Multiple superdeformed bands in sup 194 Hg and their dynamical moments of inertia

Energy Technology Data Exchange (ETDEWEB)

Riley, M.A.; Cullen, D.M.; Alderson, A.; Ali, I.; Fallon, P.; Forsyth, P.D.; Hanna, F.; Mullins, S.M.; Roberts, J.W.; Sharpey-Schafer, J.F.; Twin, P.J. (Liverpool Univ. (UK). Oliver Lodge Lab.); Poynter, R.; Wadsworth, R. (York Univ. (UK). Dept. of Physics); Bentley, M.A.; Bruce, A.M.; Simpson, J. (Science and Engineering Research Council, Daresbury (UK). Daresbury Lab.); Sletten, G. (Niels Bohr Inst., Roskilde (Denmark). Tandem Accelerator Lab.); Nazarewicz, W. (Liverpool Univ. (UK). Oliver Lodge Lab. Politechnika Warszawska (Poland). Inst. Fizyki); Bengtsson, T. (Lund Inst. of Tech. (Sweden). Dept. of Mathematical Physics); Wyss, R. (Manne Siegbahn Inst. of Physics, Stockholm (Sweden))

1990-05-28

Three superdeformed bands have been observed in {sup 194}Hg. The dynamical moment of inertia J{sup (2)} of all three bands is observed to increase by 30-40% over the frequency range {Dirac h}{omega}=0.1-0.4 MeV. This phenomena can be understood in terms of the gradual alignment of pairs of high-j intruder orbitals within the framework of the cranked Woods-Saxon and Nilsson models including pairing. The calculations together with the observed J{sup (2)} behaviour of the three bands indicate that pairing correlations in the superdeformed minimum are rather weak. (orig.).

Rett Syndrome Mutant Neural Cells Lacks MeCP2 Immunoreactive Bands.

Directory of Open Access Journals (Sweden)

Carlos Bueno

Full Text Available Dysfunctions of MeCP2 protein lead to various neurological disorders such as Rett syndrome and Autism. The exact functions of MeCP2 protein is still far from clear. At a molecular level, there exist contradictory data. MeCP2 protein is considered a single immunoreactive band around 75 kDa by western-blot analysis but several reports have revealed the existence of multiple MeCP2 immunoreactive bands above and below the level where MeCP2 is expected. MeCP2 immunoreactive bands have been interpreted in different ways. Some researchers suggest that multiple MeCP2 immunoreactive bands are unidentified proteins that cross-react with the MeCP2 antibody or degradation product of MeCP2, while others suggest that MeCP2 post-transcriptional processing generates multiple molecular forms linked to cell signaling, but so far they have not been properly analyzed in relation to Rett syndrome experimental models. The purpose of this study is to advance understanding of multiple MeCP2 immunoreactive bands in control neural cells and p.T158M MeCP2e1 mutant cells. We have generated stable wild-type and p.T158M MeCP2e1-RFP mutant expressing cells. Application of N- and C- terminal MeCP2 antibodies, and also, RFP antibody minimized concerns about nonspecific cross-reactivity, since they react with the same antigen at different epitopes. We report the existence of multiple MeCP2 immunoreactive bands in control cells, stable wild-type and p.T158M MeCP2e1-RFP mutant expressing cells. Also, MeCP2 immunoreactive bands differences were found between wild-type and p.T158M MeCP2e1-RFP mutant expressing cells. Slower migration phosphorylated band around 70kDa disappeared in p.T158M MeCP2e1-RFP mutant expressing cells. These data suggest that threonine 158 could represent an important phosphorylation site potentially involved in protein function. Our results clearly indicate that MeCP2 antibodies have no cross-reactivity with similar epitopes on others proteins, supporting the

Growth and electronic structure of single-layered transition metal dichalcogenides

DEFF Research Database (Denmark)

Dendzik, Maciej

2016-01-01

only a weak interaction between SL MoS2 and graphene, which leads to a quasi-freestanding band structure, but also to the coexistence of multiple rotational domains. Measurements of SL WS2 on Ag(111), on the other hand, reveals formation of interesting in-gap states which make WS2 metallic. Low...... different from graphene’s. For example, semiconducting TMDCs undergo an indirectdirect band gap transition when thinned to a single layer (SL); this results in greatly enhanced photoluminescence, making those materials attractive for applications in optoelectronics. Furthermore, metallic TMDCs can host......-quality SL TMDCs. We demonstrate the synthesis of SL MoS2, WS2 and TaS2 on Au(111), Ag(111) and graphene on SiC. The morphology and crystal structure of the synthesized materials is characterized by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The electronic structure of SL...

An optical study of multiple NEIAL events driven by low energy electron precipitation

Directory of Open Access Journals (Sweden)

J. M. Sullivan

2008-08-01

Full Text Available Optical data are compared with EISCAT radar observations of multiple Naturally Enhanced Ion-Acoustic Line (NEIAL events in the dayside cusp. This study uses narrow field of view cameras to observe small-scale, short-lived auroral features. Using multiple-wavelength optical observations, a direct link between NEIAL occurrences and low energy (about 100 eV optical emissions is shown. This is consistent with the Langmuir wave decay interpretation of NEIALs being driven by streams of low-energy electrons. Modelling work connected with this study shows that, for the measured ionospheric conditions and precipitation characteristics, growth of unstable Langmuir (electron plasma waves can occur, which decay into ion-acoustic wave modes. The link with low energy optical emissions shown here, will enable future studies of the shape, extent, lifetime, grouping and motions of NEIALs.

Band gap tuning of amorphous Al oxides by Zr alloying

Energy Technology Data Exchange (ETDEWEB)

Canulescu, S., E-mail: stec@fotonik.dtu.dk; Schou, J. [Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde (Denmark); Jones, N. C.; Hoffmann, S. V. [ISA, Department of Physics and Astronomy, Aarhus University, 8000 Aarhus (Denmark); Borca, C. N.; Piamonteze, C. [Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Rechendorff, K.; Nielsen, L. P.; Almtoft, K. P. [Danish Technological Institute, Kongsvang Alle 29, 8000 Aarhus (Denmark); Gudla, V. C.; Bordo, K.; Ambat, R. [Department of Mechanical Engineering, Technical University of Denmark, 2800 Kgs-Lyngby (Denmark)

2016-08-29

The optical band gap and electronic structure of amorphous Al-Zr mixed oxides with Zr content ranging from 4.8 to 21.9% were determined using vacuum ultraviolet and X-ray absorption spectroscopy. The light scattering by the nano-porous structure of alumina at low wavelengths was estimated based on the Mie scattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on the Zr content deviates from linearity and decreases from 7.3 eV for pure anodized Al{sub 2}O{sub 3} to 6.45 eV for Al-Zr mixed oxides with a Zr content of 21.9%. With increasing Zr content, the conduction band minimum changes non-linearly as well. Fitting of the energy band gap values resulted in a bowing parameter of ∼2 eV. The band gap bowing of the mixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction band minimum of anodized Al{sub 2}O{sub 3}.

Excitation of the 4.3-μm bands of CO2 by low-energy electrons

International Nuclear Information System (INIS)

Bulos, R.R.; Phelps, A.V.

1976-01-01

Rate coefficients for the excitation of the 4.3-μm bands of CO 2 by low-energy electrons in CO 2 have been measured using a drift-tube technique. The CO 2 density [(1.5 to 7) x 10 17 molecules/cm 3 ] was chosen to maximize the radiation reaching the detector. Line-by-line transmission calculations were used to take into account the absorption of 4.3-μm radiation. A small fraction of the approximately 10 -8 W of the 4.3-μm radiation produced by the approximately 10 -7 -A electron current was incident on an InSb photovoltaic detector. The detector calibration and absorption calculations were checked by measuring the readily calculated excitation coefficients for vibrational excitation of N 2 containing a small concentration of CO 2 . For pure CO 2 the number of molecules capable of emitting 4.3-μm radiation produced per cm of electron drift and per CO 2 molecule varied from 10 -17 cm -2 at E/N = 6 x 10 -17 V cm 2 to 5.4 x 10 -16 cm -2 at E/N = 4 x 10 -16 V cm 2 . Here E is the electric field and N is total gas density. The excitation coefficients at lower E/N are much larger than estimated previously. A set of vibrational excitation cross sections is obtained for CO 2 which is consistent with the excitation coefficient data and with most of the published electron-beam data

An atomic orbital based real-time time-dependent density functional theory for computing electronic circular dichroism band spectra

Energy Technology Data Exchange (ETDEWEB)

Goings, Joshua J.; Li, Xiaosong, E-mail: xsli@uw.edu [Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States)

2016-06-21

One of the challenges of interpreting electronic circular dichroism (ECD) band spectra is that different states may have different rotatory strength signs, determined by their absolute configuration. If the states are closely spaced and opposite in sign, observed transitions may be washed out by nearby states, unlike absorption spectra where transitions are always positive additive. To accurately compute ECD bands, it is necessary to compute a large number of excited states, which may be prohibitively costly if one uses the linear-response time-dependent density functional theory (TDDFT) framework. Here we implement a real-time, atomic-orbital based TDDFT method for computing the entire ECD spectrum simultaneously. The method is advantageous for large systems with a high density of states. In contrast to previous implementations based on real-space grids, the method is variational, independent of nuclear orientation, and does not rely on pseudopotential approximations, making it suitable for computation of chiroptical properties well into the X-ray regime.

Multiple scattering in electron fluid and energy loss in multi-ionic targets

Energy Technology Data Exchange (ETDEWEB)

Deutsch, C., E-mail: claude.deutsch@u-psud.fr [LPGP, UParis-Sud, 91405-Orsay (France); Tahir, N.A. [GSI, 1Planck Str., 64291-Darmstadt (Germany); Barriga-Carrasco, M. [ETSII, UCastilla-la-Mancha, 13071 Ciudad-Real (Spain); Ceban, V. [LPGP, UParis-Sud, 91405-Orsay (France); Fromy, P. [CRI, UParis-Sud, 91405-Orsay (France); Gilles, D. [CEA/Saclay/DSM/IRFU/SAP, 91191-Gif-s-Yvette (France); Leger, D. [Laboratoire Monthouy, UValenciennes-Hainaut Cambresis (France); Maynard, G. [LPGP, UParis-Sud, 91405-Orsay (France); Tashev, B. [Department of Physics, KazNu, Tole Bi82, Almaty (Kazakhstan); Volpe, L. [Department of Physics, UMilano-Bicocca, Milano 20126 (Italy)

2014-01-01

Extensions of the standard stopping model (SSM) for ion projectiles interacting with dense targets of timely concern for ICF and WDM are reviewed. They include multiple scattering on partially degenerate electrons, low velocity ion slowing down in demixing H–He mixtures within Jovian planets core or multiionic target such as Kapton.

Multiple scattering in electron fluid and energy loss in multi-ionic targets

International Nuclear Information System (INIS)

Deutsch, C.; Tahir, N.A.; Barriga-Carrasco, M.; Ceban, V.; Fromy, P.; Gilles, D.; Leger, D.; Maynard, G.; Tashev, B.; Volpe, L.

2014-01-01

Extensions of the standard stopping model (SSM) for ion projectiles interacting with dense targets of timely concern for ICF and WDM are reviewed. They include multiple scattering on partially degenerate electrons, low velocity ion slowing down in demixing H–He mixtures within Jovian planets core or multiionic target such as Kapton

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

International Nuclear Information System (INIS)

Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

2013-01-01

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

Band gap tuning of amorphous Al oxides by Zr alloying

DEFF Research Database (Denmark)

Canulescu, Stela; Jones, N. C.; Borca, C. N.

2016-01-01

minimum changes non-linearly as well.Fitting of the energy band gap values resulted in a bowing parameter of 2 eV. The band gap bowing of themixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction bandminimum of anodized Al2O3.......The optical band gap and electronic structure of amorphous Al-Zr mixed oxides, with Zr content ranging from4.8 to 21.9% were determined using vacuum ultraviolet (VUV) and X-ray absorption spectroscopy (XAS). Thelight scattering by the nano-porous structure of alumina at low wavelengths...... was estimated based on the Miescattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on Zr content deviatesfrom linearity and decreases from 7.3 eV for pure anodized Al2O3 to 6.45 eV for Al-Zr mixed oxide with Zrcontent of 21.9%. With increasing Zr content, the conduction band...

Conduction bands and invariant energy gaps in alkali bromides

NARCIS (Netherlands)

Boer, P.K. de; Groot, R.A. de

1998-01-01

Electronic structure calculations of the alkali bromides LiBr, NaBr, KBr, RbBr and CsBr are reported. It is shown that the conduction band has primarily bromine character. The size of the band gaps of bromides and alkali halides in general is reinterpreted.

Brain alterations in low-frequency fluctuations across multiple bands in obsessive compulsive disorder.

Science.gov (United States)

Giménez, Mònica; Guinea-Izquierdo, Andrés; Villalta-Gil, Victoria; Martínez-Zalacaín, Ignacio; Segalàs, Cinto; Subirà, Marta; Real, Eva; Pujol, Jesús; Harrison, Ben J; Haro, Josep Maria; Sato, Joao R; Hoexter, Marcelo Q; Cardoner, Narcís; Alonso, Pino; Menchón, José Manuel; Soriano-Mas, Carles

2017-12-01

The extent of functional abnormalities in frontal-subcortical circuits in obsessive-compulsive disorder (OCD) is still unclear. Although neuroimaging studies, in general, and resting-state functional Magnetic Resonance Imaging (rs-fMRI), in particular, have provided relevant information regarding such alterations, rs-fMRI studies have been typically limited to the analysis of between-region functional connectivity alterations at low-frequency signal fluctuations (i.e., <0.08 Hz). Conversely, the local attributes of Blood Oxygen Level Dependent (BOLD) signal across different frequency bands have been seldom studied, although they may provide valuable information. Here, we evaluated local alterations in low-frequency fluctuations across different oscillation bands in OCD. Sixty-five OCD patients and 50 healthy controls underwent an rs-fMRI assessment. Alterations in the fractional amplitude of low-frequency fluctuations (fALFF) were evaluated, voxel-wise, across four different bands (from 0.01 Hz to 0.25 Hz). OCD patients showed decreased fALFF values in medial orbitofrontal regions and increased fALFF values in the dorsal-medial prefrontal cortex (DMPFC) at frequency bands <0.08 Hz. This pattern was reversed at higher frequencies, where increased fALFF values also appeared in medial temporal lobe structures and medial thalamus. Clinical variables (i.e., symptom-specific severities) were associated with fALFF values across the different frequency bands. Our findings provide novel evidence about the nature and regional distribution of functional alterations in OCD, which should contribute to refine neurobiological models of the disorder. We suggest that the evaluation of the local attributes of BOLD signal across different frequency bands may be a sensitive approach to further characterize brain functional alterations in psychiatric disorders.

Simple method of obtaining the band strengths in the electronic spectra of diatomic molecules

International Nuclear Information System (INIS)

Gowda, L.S.; Balaji, V.N.

1977-01-01

It is shown that relative band strengths of diatomic molecules for which the product of Franck-Condon factor and r-centroid is approximately equal to 1 for (0,0) band can be determined by a simple method which is in good agreement with the smoothed array of experimental values. Such values for the Swan bands of the C 2 molecule are compared with the band strengths of the simple method. It is noted that the Swan bands are one of the outstanding features of R- and N-type stars and of the heads of comets

Elastic band prediction equations for combined free-weight and elastic band bench presses and squats.

Science.gov (United States)

Shoepe, Todd C; Ramirez, David A; Almstedt, Hawley C

2010-01-01

Elastic bands added to traditional free-weight techniques have become a part of suggested training routines in recent years. Because of the variable loading patterns of elastic bands (i.e., greater stretch produces greater resistance), it is necessary to quantify the exact loading patterns of bands to identify the volume and intensity of training. The purpose of this study was to determine the length vs. tension properties of multiple sizes of a set of commonly used elastic bands to quantify the resistance that would be applied to free-weight plus elastic bench presses (BP) and squats (SQ). Five elastic bands of varying thickness were affixed to an overhead support beam. Dumbbells of varying weights were progressively added to the free end while the linear deformation was recorded with each subsequent weight increment. The resistance was plotted as a factor of linear deformation, and best-fit nonlinear logarithmic regression equations were then matched to the data. For both the BP and SQ loading conditions and all band thicknesses tested, R values were greater than 0.9623. These data suggest that differences in load exist as a result of the thickness of the elastic band, attachment technique, and type of exercise being performed. Facilities should adopt their own form of loading quantification to match their unique set of circumstances when acquiring, researching, and implementing elastic band and free-weight exercises into the training programs.

Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

Terahertz spectroscopy of three-dimensional photonic band-gap crystals

International Nuclear Information System (INIS)

Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Ho, K.M.; Bostak, J.; Bloom, D.M.

1994-01-01

We have fabricated and built three-dimensional photonic band-gap crystals with band-gap frequencies larger than 500 GHz. We built the crystals by stacking micromachined (110) silicon wafers. The transmission and dispersion characteristics of the structures were measured by an all-electronic terahertz spectroscopy setup. The experimental results were in good agreement with theoretical calculations. To our knowledge, our new crystal has the highest reported photonic band-gap frequency

Electronic structure, optical spectra and contact terms of the CoF64- cluster in LiF

International Nuclear Information System (INIS)

Albuquerque, E.L.; Maffeo, B.; Brandi, H.S.; Siqueira, M.L. de

1975-01-01

The electronic structure, the optical absorption bands and the magnetic hyperfine contact terms have been calculated for CoF 6 4- in LiF using the Multiple Scattering Xα Method. The results obtained are compared with experiment and once more indicated that this scheme is convenient to treat such complex problems

Tuning of band gap due to fluorination of graphyne and graphdiyne

International Nuclear Information System (INIS)

Bhattacharya, B; Singh, N B; Sarkar, U

2014-01-01

The electronic properties of graphyne and graphdiyne consisting of sp and sp 2 hybridized carbon atom have been investigated within the density functional theory (DFT) method. The corresponding changes in the electronic properties due to systematic functionalization by fluorine at different possible sites are reported. Our band structure calculations clearly infer that all fluorographyne are wide band gap semiconductor and the band gap can be tuned by fluorination and the possibility of modulating the band gap provides flexibility for its use in nanoelectronic devices. Projected density of state (PDOS) analysis provides the clear idea about the bonding nature of these novel materials in details and Crystal Orbital Hamilton Population (-COHP) analysis shed insight on the orbital participating in bonding and antibonding

High-power test of S-band klystron for long-pulse operation

International Nuclear Information System (INIS)

Morii, Y.; Oshita, E.; Abe, S.; Keishi, T.; Tomimasu, T.; Ohkubo, Y.; Yoshinao, M.; Yonezawa, H.

1994-01-01

FELI(Free Electron Laser Research Institute, Inc.) is constructing a free electron laser facility covering from 20μm (infra red region) to 0.35μm (ultra violet region), using an S-band linac. The linac is commissioning now. An RF system of the linac for FELs is required of long pulse duration and high stability. S-band klystrons (TOSHIBA E3729) of the FELI linac are operated in three pulse operation modes (pulse width and peak RF power; 24μs-24MW, 12.5μs-34MW, 0.5μs-70MW). The S-band klystron and its modulator were combined to test their performance. The high power test results of the S-band klystron are summarized in this paper. (author)

Band structures of 4f and 5f materials studied by angle-resolved photoelectron spectroscopy.

Science.gov (United States)

Fujimori, Shin-ichi

2016-04-20

Recent remarkable progress in angle-resolved photoelectron spectroscopy (ARPES) has enabled the direct observation of the band structures of 4f and 5f materials. In particular, ARPES with various light sources such as lasers (hν ~ 7 eV) or high-energy synchrotron radiations (hν >/~ 400 eV) has shed light on the bulk band structures of strongly correlated materials with energy scales of a few millielectronvolts to several electronvolts. The purpose of this paper is to summarize the behaviors of 4f and 5f band structures of various rare-earth and actinide materials observed by modern ARPES techniques, and understand how they can be described using various theoretical frameworks. For 4f-electron materials, ARPES studies of CeMIn5(M = Rh, Ir, and Co) and YbRh2Si2 with various incident photon energies are summarized. We demonstrate that their 4f electronic structures are essentially described within the framework of the periodic Anderson model, and that the band-structure calculation based on the local density approximation cannot explain their low-energy electronic structures. Meanwhile, electronic structures of 5f materials exhibit wide varieties ranging from itinerant to localized states. For itinerant U5f compounds such as UFeGa5, their electronic structures can be well-described by the band-structure calculation assuming that all U5f electrons are itinerant. In contrast, the band structures of localized U5f compounds such as UPd3 and UO2 are essentially explained by the localized model that treats U5f electrons as localized core states. In regards to heavy fermion U-based compounds such as the hidden-order compound URu2Si2, their electronic structures exhibit complex behaviors. Their overall band structures are generally well-explained by the band-structure calculation, whereas the states in the vicinity of EF show some deviations due to electron correlation effects. Furthermore, the electronic structures of URu2Si2 in the paramagnetic and hidden-order phases are

Electron states in semiconductor quantum dots

International Nuclear Information System (INIS)

Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

2014-01-01

In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

Theoretical analysis of moiré fringe multiplication under a scanning electron microscope

International Nuclear Information System (INIS)

Li, Yanjie; Xie, Huimin; Chen, Pengwan; Zhang, Qingming

2011-01-01

In this study, theoretical analysis and experimental verification of fringe multiplication under a scanning electron microscope (SEM) are presented. Fringe multiplication can be realized by enhancing the magnification or the number of scanning lines under the SEM. A universal expression of the pitch of moiré fringes is deduced. To apply this method to deformation measurement, the calculation formulas of strain and displacement are derived. Compared to natural moiré, the displacement sensitivity is increased by fringe multiplication while the strain sensitivity may be retained or enhanced depending on the number of scanning lines used. The moiré patterns are formed by the interference of a 2000 lines mm −1 grating with the scanning lines of SEM, and the measured parameters of moiré fringes from experimental results agree well with theoretical analysis

Matrix elements of intraband transitions in quantum dot intermediate band solar cells: the influence of quantum dot presence on the extended-state electron wave-functions

International Nuclear Information System (INIS)

Nozawa, Tomohiro; Arakawa, Yasuhiko

2014-01-01

The intraband transitions which are essential for quantum dot intermediate band solar cells (QD IBSCs) are theoretically investigated by estimating the matrix elements from a ground bound state, which is often regarded as an intermediate band (IB), to conduction band (CB) states for a structure with a quantum dot (QD) embedded in a matrix (a QD/matrix structure). We have found that the QD pushes away the electron envelope functions (probability densities) from the QD region in almost all quantum states above the matrix CB minimum. As a result, the matrix elements of the intraband transitions in the QD/matrix structure are largely reduced, compared to those calculated assuming the envelope functions of free electrons (i.e., plane-wave envelope functions) in a matrix structure as the final states of the intraband transitions. The result indicates the strong influence of the QD itself on the intraband transitions from the IB to the CB states in QD IBSC devices. This work will help in better understanding the problem of the intraband transitions and give new insight, that is, engineering of quantum states is indispensable for the realization of QD IBSCs with high solar energy conversion efficiencies. (paper)

Band-Structure of Thallium by the LMTO Method

DEFF Research Database (Denmark)

Holtham, P. M.; Jan, J. P.; Skriver, Hans Lomholt

1977-01-01

by an energy gap. The 6d and 7s bands were found to be far above the Fermi level and the 5d states were found to be far below it. Fermi surface properties and the electronic specific heat are computed and compared with experiment. The joint density of states has also been computed and is in reasonable...... and p bands for the HCP structure. Energy bands have been evaluated both with and without spin-orbit coupling which is particularly large in thallium. Energy bands close to the Fermi level were found to be mainly 6p like in character. The 6s states lay below the 6p bands and were separated from them......The relativistic band structure of thallium has been calculated using the linear muffin-tin orbital (LMTO) method. The positions and extents of the bands were found to follow the Wigner-Seitz rule approximately, and the origin of the dispersion of the bands was established from the canonical s...

Designing an Electronic Patient Management System for Multiple Sclerosis: Building a Next Generation Multiple Sclerosis Documentation System.

Science.gov (United States)

Kern, Raimar; Haase, Rocco; Eisele, Judith Christina; Thomas, Katja; Ziemssen, Tjalf

2016-01-08

Technologies like electronic health records or telemedicine devices support the rapid mediation of health information and clinical data independent of time and location between patients and their physicians as well as among health care professionals. Today, every part of the treatment process from diagnosis, treatment selection, and application to patient education and long-term care may be enhanced by a quality-assured implementation of health information technology (HIT) that also takes data security standards and concerns into account. In order to increase the level of effectively realized benefits of eHealth services, a user-driven needs assessment should ensure the inclusion of health care professional perspectives into the process of technology development as we did in the development process of the Multiple Sclerosis Documentation System 3D. After analyzing the use of information technology by patients suffering from multiple sclerosis, we focused on the needs of neurological health care professionals and their handling of health information technology. Therefore, we researched the status quo of eHealth adoption in neurological practices and clinics as well as health care professional opinions about potential benefits and requirements of eHealth services in the field of multiple sclerosis. We conducted a paper-and-pencil-based mail survey in 2013 by sending our questionnaire to 600 randomly chosen neurological practices in Germany. The questionnaire consisted of 24 items covering characteristics of participating neurological practices (4 items), the current use of network technology and the Internet in such neurological practices (5 items), physicians' attitudes toward the general and MS-related usefulness of eHealth systems (8 items) and toward the clinical documentation via electronic health records (4 items), and physicians' knowledge about the Multiple Sclerosis Documentation System (3 items). From 600 mailed surveys, 74 completed surveys were returned

The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

International Nuclear Information System (INIS)

Mohammad, Rezek; Katircioglu, Senay

2009-01-01

The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

Observation of coherently enhanced tunable narrow-band terahertz transition radiation from a relativistic sub-picosecond electron bunch train

International Nuclear Information System (INIS)

Piot, P.; Maxwell, T. J.; Sun, Y.-E; Ruan, J.; Lumpkin, A. H.; Thurman-Keup, R.; Rihaoui, M. M.

2011-01-01

We experimentally demonstrate the production of narrow-band (δf/f≅20% at f≅0.5THz) transition radiation with tunable frequency over [0.37, 0.86] THz. The radiation is produced as a train of sub-picosecond relativistic electron bunches transits at the vacuum-aluminum interface of an aluminum converter screen. The bunch train is generated via a transverse-to-longitudinal phase space exchange technique. We also show a possible application of modulated beams to extend the dynamical range of a popular bunch length diagnostic technique based on the spectral analysis of coherent radiation.

Thin-film intermediate band chalcopyrite solar cells

International Nuclear Information System (INIS)

Fuertes Marron, D.; Marti, A.; Luque, A.

2009-01-01

Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

Analysis of multiple scattering contributions in electron-impact ionization of molecular hydrogen

Science.gov (United States)

Ren, Xueguang; Hossen, Khokon; Wang, Enliang; Pindzola, M. S.; Dorn, Alexander; Colgan, James

2017-10-01

We report a combined experimental and theoretical study on the low-energy (E 0 = 31.5 eV) electron-impact ionization of molecular hydrogen (H2). Triple differential cross sections are measured for a range of fixed emission angles of one outgoing electron between {θ }1=-70^\\circ and -130° covering the full 4π solid angle of the second electron. The energy sharing of the outgoing electrons varies from symmetric ({E}1={E}2=8 eV) to highly asymmetric (E 1 = 1 eV and E 2 = 15 eV). In addition to the binary and recoil lobes, a structure is observed perpendicular to the incoming beam direction which is due to multiple scattering of the projectile inside the molecular potential. The absolutely normalized experimental cross sections are compared with results from the time-dependent close-coupling (TDCC) calculations. Molecular alignment dependent TDCC results demonstrate that these structures are only present if the molecule axis is lying in the scattering plane.

A multiple gap plasma cathode electron gun and its electron beam analysis in self and trigger breakdown modes

International Nuclear Information System (INIS)

Kumar, Niraj; Pal, Udit Narayan; Prakash, Ram; Pal, Dharmendra Kumar; Jadon, Arvind Singh; Rahaman, Hasibur

2016-01-01

In the present paper, a pseudospark discharge based multiple gap plasma cathode electron gun is reported which has been operated separately in self and trigger breakdown modes using two different gases, namely, argon and hydrogen. The beam current and beam energy have been analyzed using a concentric ring diagnostic arrangement. Two distinct electron beams are clearly seen with hollow cathode and conductive phases. The hollow cathode phase has been observed for ∼50 ns where the obtained electron beam is having low beam current density and high energy. While in conductive phase it is high current density and low energy electron beam. It is inferred that in the hollow cathode phase the beam energy is more for the self breakdown case whereas the current density is more for the trigger breakdown case. The tailor made operation of the hollow cathode phase electron beam can play an important role in microwave generation. Up to 30% variation in the electron beam energy has been achieved keeping the same gas and by varying the breakdown mode operations. Also, up to 32% variation in the beam current density has been achieved for the trigger breakdown mode at optimized trigger position by varying the gas type.

A multiple gap plasma cathode electron gun and its electron beam analysis in self and trigger breakdown modes.

Science.gov (United States)

Kumar, Niraj; Pal, Dharmendra Kumar; Jadon, Arvind Singh; Pal, Udit Narayan; Rahaman, Hasibur; Prakash, Ram

2016-03-01

In the present paper, a pseudospark discharge based multiple gap plasma cathode electron gun is reported which has been operated separately in self and trigger breakdown modes using two different gases, namely, argon and hydrogen. The beam current and beam energy have been analyzed using a concentric ring diagnostic arrangement. Two distinct electron beams are clearly seen with hollow cathode and conductive phases. The hollow cathode phase has been observed for ∼50 ns where the obtained electron beam is having low beam current density and high energy. While in conductive phase it is high current density and low energy electron beam. It is inferred that in the hollow cathode phase the beam energy is more for the self breakdown case whereas the current density is more for the trigger breakdown case. The tailor made operation of the hollow cathode phase electron beam can play an important role in microwave generation. Up to 30% variation in the electron beam energy has been achieved keeping the same gas and by varying the breakdown mode operations. Also, up to 32% variation in the beam current density has been achieved for the trigger breakdown mode at optimized trigger position by varying the gas type.

A multiple gap plasma cathode electron gun and its electron beam analysis in self and trigger breakdown modes

Energy Technology Data Exchange (ETDEWEB)

Kumar, Niraj; Pal, Udit Narayan; Prakash, Ram [CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan 333031 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-CEERI Campus, Pilani (India); Pal, Dharmendra Kumar; Jadon, Arvind Singh; Rahaman, Hasibur [CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan 333031 (India)

2016-03-15

In the present paper, a pseudospark discharge based multiple gap plasma cathode electron gun is reported which has been operated separately in self and trigger breakdown modes using two different gases, namely, argon and hydrogen. The beam current and beam energy have been analyzed using a concentric ring diagnostic arrangement. Two distinct electron beams are clearly seen with hollow cathode and conductive phases. The hollow cathode phase has been observed for ∼50 ns where the obtained electron beam is having low beam current density and high energy. While in conductive phase it is high current density and low energy electron beam. It is inferred that in the hollow cathode phase the beam energy is more for the self breakdown case whereas the current density is more for the trigger breakdown case. The tailor made operation of the hollow cathode phase electron beam can play an important role in microwave generation. Up to 30% variation in the electron beam energy has been achieved keeping the same gas and by varying the breakdown mode operations. Also, up to 32% variation in the beam current density has been achieved for the trigger breakdown mode at optimized trigger position by varying the gas type.

Relativistic band-structure calculations for CeTIn sub 5 (T=Ir and Co) and analysis of the energy bands by using tight-binding method

CERN Document Server

Maehira, T; Ueda, K; Hasegawa, A

2003-01-01

In order to investigate electronic properties of recently discovered heavy fermion superconductors CeTIn sub 5 (T=Ir and Co), we employ the relativistic linear augmented-plane-wave (RLAPW) method to clarify the energy band structures and Fermi surfaces of those materials. The obtained energy bands mainly due to the large hybridization between Ce 4 f and In 5 p states well reproduce the Fermi surfaces consistent with the de Haas-van Alphen experimental results. However, when we attempt to understand magnetism and superconductively in CeTIn sub 5 from the microscopic viewpoint, the energy bands obtained in the RLAPW method are too complicated to analyze the system by further including electron correlations. Thus, it is necessary to prepare a more simplified model, keeping correctly the essential characters of the energy bands obtained in the band-structure calculation. For the purpose, we construct a tight-binding model for CeTIn sub 5 by including f-f and p-p hoppings as well as f-p hybridization, which are ex...

Electronic structure of silicon superlattices

International Nuclear Information System (INIS)

Krishnamurthy, S.; Moriarty, J.A.

1984-01-01

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

Multiple sclerosis patients lacking oligoclonal bands in the cerebrospinal fluid have less global and regional brain atrophy.

Science.gov (United States)

Ferreira, Daniel; Voevodskaya, Olga; Imrell, Kerstin; Stawiarz, Leszek; Spulber, Gabriela; Wahlund, Lars-Olof; Hillert, Jan; Westman, Eric; Karrenbauer, Virginija Danylaité

2014-09-15

To investigate whether multiple sclerosis (MS) patients with and without cerebrospinal fluid (CSF) oligoclonal immunoglobulin G bands (OCB) differ in brain atrophy. Twenty-eight OCB-negative and thirty-five OCB-positive patients were included. Larger volumes of total CSF and white matter (WM) lesions; smaller gray matter (GM) volume in the basal ganglia, diencephalon, cerebellum, and hippocampus; and smaller WM volume in corpus callosum, periventricular-deep WM, brainstem, and cerebellum, were observed in OCB-positives. OCB-negative patients, known to differ genetically from OCB-positives, are characterized by less global and regional brain atrophy. This finding supports the notion that OCB-negative MS patients may represent a clinically relevant MS subgroup. Copyright © 2014 Elsevier B.V. All rights reserved.

Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure

International Nuclear Information System (INIS)

Kunert, H.W.; Machatine, A.G.J.; Malherbe, J.B.; Barnas, J.; Hoffmann, A.; Wagner, M.R.

2008-01-01

We have examined the effect of Time Reversal Symmetry (TRS) on vibrational modes and on the electronic band structure of Si and Ge. Most of the primary non-interacting modes are not affected by TRS. Only phonons originating from high symmetry lines S and A of the Brillouin Zone (BZ) indicate extra degeneracy. Selection rules for some two and three phonons originating from high symmetry lines are determined. The states of electrons and holes described by electronic band structure due to spin-inclusion are assigned by spinor representations of the double space group. Inclusion of the TRS into the band structure results in extra degeneracy of electrons and holes, and therefore optical selection rules suppose to be modified

Simulations of the ILC Electron Gun and Electron Bunching System