Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

Directory of Open Access Journals (Sweden)

Eswaran Uthirajoo

Full Text Available For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC power amplifier (PA is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR and error vector magnitude (EVM specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

Science.gov (United States)

Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

2014-01-01

For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

Wideband LTE Power Amplifier with Integrated Novel Analog Pre-Distorter Linearizer for Mobile Wireless Communications

Science.gov (United States)

Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

2014-01-01

For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA’s power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics. PMID:25033049

6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

Directory of Open Access Journals (Sweden)

Dong‐Hwan Shin

2017-10-01

Full Text Available A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power‐added efficiency (PAE at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse‐mode condition of a 100‐μs pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W to 40.4 dBm (11 W with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.

Study of complete interconnect reliability for a GaAs MMIC power amplifier

Science.gov (United States)

Lin, Qian; Wu, Haifeng; Chen, Shan-ji; Jia, Guoqing; Jiang, Wei; Chen, Chao

2018-05-01

By combining the finite element analysis (FEA) and artificial neural network (ANN) technique, the complete prediction of interconnect reliability for a monolithic microwave integrated circuit (MMIC) power amplifier (PA) at the both of direct current (DC) and alternating current (AC) operation conditions is achieved effectively in this article. As a example, a MMIC PA is modelled to study the electromigration failure of interconnect. This is the first time to study the interconnect reliability for an MMIC PA at the conditions of DC and AC operation simultaneously. By training the data from FEA, a high accuracy ANN model for PA reliability is constructed. Then, basing on the reliability database which is obtained from the ANN model, it can give important guidance for improving the reliability design for IC.

Advances in high-power rf amplifiers

International Nuclear Information System (INIS)

Tallerico, P.J.

1979-01-01

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

Fabrication of an electro-absorption transceiver with a monolithically integrated optical amplifier for fiber transmission of 40–60 GHz radio signals

International Nuclear Information System (INIS)

Zhang, Andy Zhenzhong; Wang, Qin; Fonjallaz, Pierre-Yves; Almqvist, Susanne; Karlsson, Stefan; Kjebon, Olle; Schatz, Richard; Chacinski, Marek; Thylén, Lars; Berggren, Jesper; Hammar, Mattias; Honecker, Jörg; Steffan, Andreas

2011-01-01

We report on the fabrication of a monolithically integrated semiconductor optical amplifier (SOA) and a reflective electro-absorption transceiver (EAT) for 40–60 GHz radio-over-fiber applications. The EAT can either function as a transmitter (reflective modulator) or as a receiver (photodetector) depending on operation mode. The SOA and the EAT sections are based on different InGaAsP multiple quantum-well active layers connected by a butt joint. Benzocyclobutene is used to reduce the capacitance beside the ridge mesa. Devices are designed to have a peaked response at the operating frequency through the design of microwave waveguides on top of the devices. The packaged device exhibits at 0.1 mW optical input power an amplified DC responsivity of 18.5 mA mW −1 and a modulation efficiency of 0.67 mW V −1 . The estimated radio frequency loss at 40 GHz of an optical link consisting of two SOA–EAT devices was 23 dB using an unmodulated optical input carrier to the transmitter of 0.94 mW

Integration trends in monolithic power ICs: Application and technology challenges

NARCIS (Netherlands)

Rose, M.; Bergveld, H.J.

2016-01-01

This paper highlights the general trend towards further monolithic integration in power applications by enabling power management and interfacing solutions in advanced CMOS nodes. The need to combine high-density digital circuits, power-management circuits, and robust interfaces in a single

Power Amplifier Design for E-band Wireless System Communications

DEFF Research Database (Denmark)

Hadziabdic, Dzenan; Krozer, Viktor; Johansen, Tom Keinicke

2008-01-01

E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present...... a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output...... power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications...

Series-Tuned High Efficiency RF-Power Amplifiers

DEFF Research Database (Denmark)

Vidkjær, Jens

2008-01-01

An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

GaN-based Power amplifiers for microwave applications

Directory of Open Access Journals (Sweden)

Jorge Julián Moreno-Rubio

2016-01-01

Full Text Available This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.

Modeling and design techniques for RF power amplifiers

CERN Document Server

Raghavan, Arvind; Laskar, Joy

2008-01-01

The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

Design And Construction Of 300W Audio Power Amplifier For Classroom

Directory of Open Access Journals (Sweden)

Shune Lei Aung

2015-07-01

Full Text Available Abstract This paper describes the design and construction of 300W audio power amplifier for classroom. In the construction of this amplifier microphone preamplifier tone preamplifier equalizer line amplifier output power amplifier and sound level indicator are included. The output power amplifier is designed as O.C.L system and constructed by using Class B among many types of amplifier classes. There are two types in O.C.L system quasi system and complementary system. Between them the complementary system is used in the construction of 300W audio power amplifier. The Multisim software is utilized for the construction of audio power amplifier.

A high-power two stage traveling-wave tube amplifier

International Nuclear Information System (INIS)

Shiffler, D.; Nation, J.A.; Schachter, L.; Ivers, J.D.; Kerslick, G.S.

1991-01-01

Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a ''sideband''-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the ''sidebands'' are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length

Multilevel tracking power supply for switch-mode audio power amplifiers

DEFF Research Database (Denmark)

Iversen, Niels Elkjær; Lazarevic, Vladan; Vasic, Miroslav

2018-01-01

to the power supply in order to improve efficiency. A 100 W prototype system was designed. Measured results show that systems employing envelope tracking can improve system efficiency from 2% to 12%, i.e. a factor of 6. The temperature rise is strongly reduced, especially for the switching power MOSFETs where......Switch-mode technology is the common choice for high efficiency audio power amplifiers. The dynamic nature of real audio reduces efficiency as less continuous output power can be achieved. Based on methods used for RF amplifiers this paper proposes to employ envelope tracking techniques...

Improved monolithic reinforced concrete construction for nuclear power stations

International Nuclear Information System (INIS)

Guenther, P.; Fischer, K.

1983-01-01

Experience has shown that in applying monolithic reinforced concrete in nuclear power plant construction the following auxiliary means are useful: measuring sheets in assembling, welding gauges for reaching high tolerance accuracies of prefabricated reinforced concrete members, suitable lining materials, formwork anchorage and formwork release agents, concrete workability agents, mechanized procedures for finishing and assembling. These means were successfully tested in constructing the Greifswald nuclear power station

Self-oscillating modulators for direct energy conversion audio power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating modulators can be used with the direct switching-mode audio power amplifier to improve its performance by providing fast hysteretic control with high power supply rejection ratio, open-loop stability and high bandwidth. Its operation is thoroughly analyzed and simulated waveforms of a prototype amplifier are presented. (au)

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

Science.gov (United States)

Seneviratne, Sashieka

With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

Stable polarization short pulse passively Q-switched monolithic microchip laser with [110] cut Cr4+:YAG

International Nuclear Information System (INIS)

Wang, Y; Gong, M; Yan, P; Huang, L; Li, D

2009-01-01

A monolithic Nd:YAG microchip laser with [110] cut Cr 4+ :YAG is presented. The output beam is linearly polarized with polarization ratio higher than 100:1. The polarization direction is stable, independent of pump power, crystal temperature, LD temperature. In single longitudinal mode operation, stable 259 ps pulses at 2.5 kHz with 82 kW peak power and diffraction limited beam mode are output. With a simple and compact one-pass Nd:YVO 4 amplifier, 144 kW peak power is achieved. Single longitudinal and fundamental transverse mode is kept after passing through the amplifier stage. The microchip laser can be operated in two longitudinal modes with two sets of output pulses by increasing the pump power

Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

Science.gov (United States)

Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

1991-01-01

Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

Introduction to RF power amplifier design and simulation

CERN Document Server

Eroglu, Abdullah

2015-01-01

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

Embedded control system for high power RF amplifiers

International Nuclear Information System (INIS)

Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

2011-01-01

RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

47 CFR 2.815 - External radio frequency power amplifiers.

Science.gov (United States)

2010-10-01

... 47 Telecommunication 1 2010-10-01 2010-10-01 false External radio frequency power amplifiers. 2... AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815 External radio frequency power amplifiers. (a) As used in this part, an external radio frequency power...

A high-power compact regenerative amplifier FEL

International Nuclear Information System (INIS)

Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

1997-01-01

The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

Analysis and evaluation of the power amplifier device

Energy Technology Data Exchange (ETDEWEB)

Kim, Y. K.; Ryu, J. W. [Kongju National University, Gongju (Korea, Republic of)

2011-11-15

We developed a master oscillator power amplifier (MOPA) type fiber amplifier for the separation of the Ca-48 isotope by using a fiber laser. The ytterbium (Yb)-doped end-capped rod-type photonic crystal fiber (PCF) was used as a gain medium of MOPA amplifier. The PCFs used in our experiments were a 56-cm and an 81-cm rod-type end-capped Yb-doped double-clad PM fibers 'DC-285/100-PM-Yb-Rod', with a 100-{mu}m core (NA 0.02) and a 285-{mu}m cladding (NA 0.6) fabricated by NKT Photonics. The mode field diameter (MFD) of the rod-type PCF was 75-{mu}m, and an absorption efficiency of 30 dB/m at 976 nm and a low NA 0.02 helped to sustain the excellent lasing beam quality. We obtained an output power of 112 W at a pump power of 380 W with a repetition rate of 150 kHz. The measured pulse width was 13 ns at 150 kHz, 1056 nm. The laser beam quality shows a single mode amplification characteristics with a beam quality factor values of M2 are 2 -3. The PCF launching efficiency reached a maximum value of 86.7% with an average efficiencies of above 80%. At a pump power of 250 W and seed power input of 4 W, the CW PCF amplifier was found to generate average output powers of 138 W, 110 W, and 82 W at 1056-nm, 1070-nm, and 1089-nm wavelengths, respectively. The amplified PCF output beam had a line width of 70 MHz full width at half maximum (FWHM). These PCF amplified beams had good beam qualities with M2values of less than 1.8 at all three wavelengths. The gain saturation seed input power in the 81-cm PCF was found to be {approx}6 W at 1056 nm. The temperature of the PCF core reached over 230 .deg. C at the pumping section of the PCF. The temperatures of the end-cap heads on both the pumping and the output end-cap sides were 81.4 .deg. C and 35.7 .deg. C, respectively. The PCF amplifier maintained good polarization mode characteristics with an average DOP of over 87%. The slight decrease in the DOP oat output powers over 170 W output power may have been caused by a

Application of the monolithic solid oxide fuel cell to space power systems

International Nuclear Information System (INIS)

Myles, K.M.; Bhattacharyya, S.K.

1991-01-01

The monolithic solid-oxide fuel cell (MSOFC) is a promising electrochemical power generation device that is currently under development at Argonne National Laboratory. The extremely high power density of the MSOFC leads to MSOFC systems that have sufficiently high energy densities that they are excellent candidates for a number of space missions. The fuel cell can also be operated in reverse, if it can be coupled to an external power source, to regenerate the fuel and oxidant from the water product. This feature further enhances the potential mission applications of the MSOFC. In this paper, the current status of the fuel cell development is presented---the focus being on fabrication and currently achievable performance. In addition, a specific example of a space power system, featuring a liquid metal cooled fast spectrum nuclear reactor and a monolithic solid oxide fuel cell, is presented to demonstrate the features of an integrated system

Application of the monolithic solid oxide fuel cell to space power systems

Science.gov (United States)

Myles, Kevin M.; Bhattacharyya, Samit K.

1991-01-01

The monolithic solid-oxide fuel cell (MSOFC) is a promising electrochemical power generation device that is currently under development at Argonne National Laboratory. The extremely high power density of the MSOFC leads to MSOFC systems that have sufficiently high energy densities that they are excellent candidates for a number of space missions. The fuel cell can also be operated in reverse, if it can be coupled to an external power source, to regenerate the fuel and oxidant from the water product. This feature further enhances the potential mission applications of the MSOFC. In this paper, the current status of the fuel cell development is presented—the focus being on fabrication and currently achievable performance. In addition, a specific example of a space power system, featuring a liquid metal cooled fast spectrum nuclear reactor and a monolithic solid oxide fuel cell, is presented to demonstrate the features of an integrated system.

Empirical multichannel power consumption model for erbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza

2015-01-01

In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified simu......-users, it is relevant to study channel number dependent power consumption for devising EDFA power efficient control and design.......In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end...

Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

Science.gov (United States)

Leonard, Regis F.; Bhasin, Kul B.

Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure. (For individual items see A93-25777 to A93-25814)

Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

International Nuclear Information System (INIS)

Varner, R.L.; Blankenship, J.L.; Beene, J.R.; Todd, R.A.

1998-02-01

Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beam Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF 2 ) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF 2 detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

Science.gov (United States)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

1984-01-01

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

Science.gov (United States)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

A monolithic charge multiplexer with 0.5% accuracy

International Nuclear Information System (INIS)

Lewis, J.; McPherson, G.M.; Morrissey, M.C.; Thompson, J.C.; Tucker, A.W.

1990-01-01

This paper describes a 16 channel monolithic charge multiplexer providing a close tolerance, low cost, low power solution to the problem of handling the signals from detectors with large numbers of channels. Outputs may be wire-orred to increase the degree of multiplexing. A system designed with this chip and with suitable close tolerance processing downstream will have a gain match of ±0.5% and a front end chip cost of approximately $1 per channel. The chip is fabricated in CMOS technology and the test of a 1500 channel system has demonstrated the feasibility of CMOS in this context. The chip produces a prompt sum of the charges from the 16 signal sources and integrates and stores the individual charges for later serial readout. A single network provides amplifier bias and releases area to facilitate optimum noise performance and signal handling. Amplifier and bias network design together with p-well screens to isolate storage capacitors from the substrate provide the power line rejection essential in systems generating a trigger from large numbers of channels. (orig.)

A high efficiency PWM CMOS class-D audio power amplifier

Energy Technology Data Exchange (ETDEWEB)

Zhu Zhangming; Liu Lianxi; Yang Yintang [Institute of Microelectronics, Xidian University, Xi' an 710071 (China); Lei Han, E-mail: zmyh@263.ne [Xi' an Power-Rail Micro Co., Ltd, Xi' an 710075 (China)

2009-02-15

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 mum CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 muA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm{sup 2}. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A high efficiency PWM CMOS class-D audio power amplifier

International Nuclear Information System (INIS)

Zhu Zhangming; Liu Lianxi; Yang Yintang; Lei Han

2009-01-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm 2 . With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

A high efficiency PWM CMOS class-D audio power amplifier

Science.gov (United States)

Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

2009-02-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

Current-Driven Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

2012-01-01

The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

Self-oscillating modulators for direct energy conversion audio power amplifiers

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating...

Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

Science.gov (United States)

2017-03-01

QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

High peak power picosecond hybrid fiber and solid-state amplifier system

International Nuclear Information System (INIS)

Wushouer, X; Yan, P; Yu, H; Liu, Q; Fu, X; Yan, X; Gong, M

2010-01-01

We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO 4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO 4 – Nd:YVO 4 – YVO 4 rod crystal was used as the gain medium. The 53 W TEM 00 mode with the peak power of 40 kW, beam quality of M 2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

Class H power amplifier for power saving in fluxgate current transducers

OpenAIRE

Velasco Quesada, Guillermo; Román Lumbreras, Manuel; Pérez Delgado, Raul; Conesa Roca, Alfons

2016-01-01

This paper presents a new improvement in the design of a fluxgate-based current transducer in order to reduce the power consumption of control electronics. The proposed improvement involves the replacement of the output linear amplifier of the transducer by a class H amplifier. The output amplifier is devoted to the magnetic flux compensation and generates the transducer output current, which is proportional to the current to be measured. In this way, it is possible to reduce significantly th...

An 8–18 GHz broadband high power amplifier

International Nuclear Information System (INIS)

Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

2011-01-01

An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

CMOS 60-GHz and E-band power amplifiers and transmitters

CERN Document Server

Zhao, Dixian

2015-01-01

This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer

DEFF Research Database (Denmark)

Narendra, K.; Limiti, E.; Paoloni, C.

2013-01-01

A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology. The impedance transformer employs asymmetric coupled lines and transforms a low output impedance of the amplifier to a standard 50 Ω...

Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

DEFF Research Database (Denmark)

Moradi, Farshad

A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power...

A real-time control system architecture for industrial power amplifiers

NARCIS (Netherlands)

Qureshi, F.; Spinu, V.; Wijnands, C.G.E.; Lazar, M.

2013-01-01

Power amplifiers are a highly important component in a range of industrial applications, such as, servo-drives, magnetic resonance imaging, energy systems, and audio. The control system for power amplifiers should satisfy a range of requirements, e.g., offset free tracking, stability margins, and

High-power piezo drive amplifier for large stack and PFC applications

Science.gov (United States)

Clingman, Dan J.; Gamble, Mike

2001-08-01

This paper describes the continuing development of Boeing High Power Piezo Drive Amplifiers. Described is the development and testing of a 1500 Vpp, 8 amp switching amplifier. This amplifier is used to drive a piezo stack driven rotor blade trailing edge flap on a full size helicopter. Also discuss is a switching amplifier designed to drive a Piezo Fiber Composite (PFC) active twist rotor blade. This amplifier was designed to drive the PFC material at 2000 Vpp and 0.5 amps. These amplifiers recycle reactive energy, allowing for a power and weight efficient amplifier design. This work was done in conjunction with the DARPA sponsored Phase II Smart Rotor Blade program and the NASA Langley Research Center sponsored Active Twist Rotor (ATR) blade program.

Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

Science.gov (United States)

Wood, Hannah M; Parkinson, Dilworth Y; Griswold, Charles E; Gillespie, Rosemary G; Elias, Damian O

2016-04-25

Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for several ant genera [5, 8], which have evolved some of the fastest known movements in the animal kingdom [6]. However, power-amplified predatory strikes were not previously known in one of the largest animal classes, the arachnids. Mecysmaucheniidae spiders, which occur only in New Zealand and southern South America, are tiny, cryptic, ground-dwelling spiders that rely on hunting rather than web-building to capture prey [9]. Analysis of high-speed video revealed that power-amplified mechanisms occur in some mecysmaucheniid species, with the fastest species being two orders of magnitude faster than the slowest species. Molecular phylogenetic analysis revealed that power-amplified cheliceral strikes have evolved four times independently within the family. Furthermore, we identified morphological innovations that directly relate to cheliceral function: a highly modified carapace in which the cheliceral muscles are oriented horizontally; modification of a cheliceral sclerite to have muscle attachments; and, in the power-amplified species, a thicker clypeus and clypeal apodemes. These structural innovations may have set the stage for the parallel evolution of ballistic predatory strikes. Copyright © 2016 Elsevier Ltd. All rights reserved.

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

Science.gov (United States)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Spatial Power Combining Amplifier for Ground and Flight Applications

Science.gov (United States)

Velazco, J. E.; Taylor, M.

2016-11-01

Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross

Audio power amplifier design handbook

CERN Document Server

Self, Douglas

2013-01-01

This book is essential for audio power amplifier designers and engineers for one simple reason...it enables you as a professional to develop reliable, high-performance circuits. The Author Douglas Self covers the major issues of distortion and linearity, power supplies, overload, DC-protection and reactive loading. He also tackles unusual forms of compensation and distortion produced by capacitors and fuses. This completely updated fifth edition includes four NEW chapters including one on The XD Principle, invented by the author, and used by Cambridge Audio. Cro

Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

CERN Document Server

Božanić, Mladen

2016-01-01

This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

High efficiency class-I audio power amplifier using a single adaptive supply

International Nuclear Information System (INIS)

Peng Zhenfei; Yang Shanshand; Feng Yong; Hong Zhiliang; Liu Yang

2012-01-01

A high efficiency class-I linear audio power amplifier (PA) with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD+N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 Ω speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-I amplifier suitable for portable and RF sensitive applications. (semiconductor integrated circuits)

Gyrocon: a deflection-modulated, high-power microwave amplifier

International Nuclear Information System (INIS)

Tallerico, P.J.

1977-10-01

A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

5 Watt GaN HEMT Power Amplifier for LTE

Directory of Open Access Journals (Sweden)

K. Niotaki

2014-04-01

Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

High power pulsed sources based on fiber amplifiers

Science.gov (United States)

Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

2017-11-01

Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

A design concept for an MMIC (Monolithic Microwave Integrated Circuit) microstrip phased array

Science.gov (United States)

Lee, Richard Q.; Smetana, Jerry; Acosta, Roberto

1987-01-01

A conceptual design for a microstrip phased array with monolithic microwave integrated circuit (MMIC) amplitude and phase controls is described. The MMIC devices used are 20 GHz variable power amplifiers and variable phase shifters recently developed by NASA contractors for applications in future Ka proposed design, which concept is for a general NxN element array of rectangular lattice geometry. Subarray excitation is incorporated in the MMIC phased array design to reduce the complexity of the beam forming network and the number of MMIC components required.

Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

Science.gov (United States)

Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

2014-03-15

Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

OpenAIRE

Ali Reza Zirak; Sobhan Roshani

2016-01-01

In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

Switching-mode Audio Power Amplifiers with Direct Energy Conversion

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

has been replaced with a high frequency AC link. When compared to the conventional Class D amplifiers with a separate DC power supply, the proposed single conversion stage amplifier provides simple and compact solution with better efficiency and higher level of integration, leading to reduced...

ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

International Nuclear Information System (INIS)

Nelson, Brian A.

2006-01-01

Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Science.gov (United States)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

A 500-600 MHz GaN power amplifier with RC-LC stability network

Science.gov (United States)

Ma, Xinyu; Duan, Baoxing; Yang, Yintang

2017-08-01

A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration

Science.gov (United States)

Albrodt, P.; Hanna, M.; Moron, F.; Decker, J.; Winterfeldt, M.; Blume, G.; Erbert, G.; Crump, P.; Georges, P.; Lucas-Leclin, G.

2018-02-01

Improved diode laser beam combining techniques are in strong demand for applications in material processing. Coherent beam combining (CBC) is the only combining approach that has the potential to maintain or even improve all laser properties, and thus has high potential for future systems. As part of our ongoing studies into CBC of diode lasers, we present recent progress in the coherent superposition of high-power single-pass tapered laser amplifiers. The amplifiers are seeded by a DFB laser at λ = 976 nm, where the seed is injected into a laterally single-mode ridge-waveguide input section. The phase pistons on each beam are actively controlled by varying the current in the ridge section of each amplifier, using a sequential hill-climbing algorithm, resulting in a combined beam with power fluctuations of below 1%. The currents into the tapered sections of the amplifiers are separately controlled, and remain constant. In contrast to our previous studies, we favour a limited number of individual high-power amplifiers, in order to preserve a high extracted power per emitter in a simple, low-loss coupling arrangement. Specifically, a multi-arm interferometer architecture with only three devices is used, constructed using 6 mm-long tapered amplifiers, mounted junction up on C-mounts, to allow separate contact to single mode and amplifier sections. A maximum coherently combined power of 12.9 W is demonstrated in a nearly diffraction-limited beam, corresponding to a 65% combining efficiency, with power mainly limited by the intrinsic beam quality of the amplifiers. Further increased combined power is currently sought.

A broadband high-efficiency Doherty power amplifier using symmetrical devices

Science.gov (United States)

Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua

2018-04-01

This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).

A novel power amplifier structure for RFID tag applications

International Nuclear Information System (INIS)

Deng Jianbao; Zhang Shilin; Li De; Zhang Yanzheng; Mao Luhong; Xie Sheng

2011-01-01

A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm 2 in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. (semiconductor integrated circuits)

Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

International Nuclear Information System (INIS)

Khan, T.K.; Tamboli, P.K.; Antony, J.; Balasubramanian, R.; Agilandaeswari, K.; Pramanik, M.

2010-01-01

This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

Multi Carrier Modulation Audio Power Amplifier with Programmable Logic

DEFF Research Database (Denmark)

Christiansen, Theis; Andersen, Toke Meyer; Knott, Arnold

2009-01-01

While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment. To lower the EMI of switch-mode (class D) audio power a...

Development of High Power Amplifiers for Space and Ground-based Applications

DEFF Research Database (Denmark)

Hernández, Carlos Cilla

The power amplifier used in the transmitter of a microwave system is a key issue, and it derermines the system performance, cost, power consumption and reliability to a considerable extent. Traditionally, most of high power amplifiers used in military and commercial applications were tube......, the device was delivering power levels larger than 75 W, PAE >35% and gain oscillating between 7.5 +/- 0.5 dB. Measurements were shifted down in frequency 1 GHz, but simulations predicted maximum power levels similar to the ones measured....

Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

2008-01-01

While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of swit...

Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

DEFF Research Database (Denmark)

Knott, Arnold; Petersen, Lars Press

2013-01-01

Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

PULSE MODULATION POWER AMPLIFIER WITH ENHANCED CASCADE CONTROL METHOD

DEFF Research Database (Denmark)

1998-01-01

a single local feedback path A (7) with a lowpass characteristic and local forward blocks B¿1? or B (3, 4). The leads to a much improved system with a very low sensitivity to errors in the switching power stage. In the second preferred embodiment of the invention the control structure is extended...... and feedback path A to determine stable self-oscillating conditions. An implemented 250W example MECC digital power amplifier has proven superior performance in terms of audio performance (0.005 % distortion, 115 dB dynamic range) and efficiency (92 %).......A digital switching power amplifier with Multivariable Enhanced Cascade Controlled (MECC) includes a modulator, a switching power stage and a low pass filter. In the first preferred embodiment an enhanced cascade control structure local to the switching power stage is added, characterised by having...

A Doherty Power Amplifier with Large Back-Off Power Range Using Integrated Enhancing Reactance

Directory of Open Access Journals (Sweden)

Wa Kong

2018-01-01

Full Text Available A symmetric Doherty power amplifier (DPA based on integrated enhancing reactance (IER was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.

High efficiency, monolithic fiber chirped pulse amplification system for high energy femtosecond pulse generation.

Science.gov (United States)

Peng, Xiang; Kim, Kyungbum; Mielke, Michael; Jennings, Stephen; Masor, Gordon; Stohl, Dave; Chavez-Pirson, Arturo; Nguyen, Dan T; Rhonehouse, Dan; Zong, Jie; Churin, Dmitriy; Peyghambarian, N

2013-10-21

A novel monolithic fiber-optic chirped pulse amplification (CPA) system for high energy, femtosecond pulse generation is proposed and experimentally demonstrated. By employing a high gain amplifier comprising merely 20 cm of high efficiency media (HEM) gain fiber, an optimal balance of output pulse energy, optical efficiency, and B-integral is achieved. The HEM amplifier is fabricated from erbium-doped phosphate glass fiber and yields gain of 1.443 dB/cm with slope efficiency >45%. We experimentally demonstrate near diffraction-limited beam quality and near transform-limited femtosecond pulse quality at 1.55 µm wavelength. With pulse energy >100 µJ and pulse duration of 636 fs (FWHM), the peak power is estimated to be ~160 MW. NAVAIR Public Release Distribution Statement A-"Approved for Public release; distribution is unlimited".

1-MHz high power femtosecond Yb-doped fiber chirped-pulse amplifier

Science.gov (United States)

Hu, Zhong-Qi; Yang, Pei-Long; Teng, Hao; Zhu, Jiang-Feng; Wei, Zhi-Yi

2018-01-01

A practical femtosecond polarization-maintaining Yb-doped fiber amplifier enabling 153 fs transform-limited pulse duration with 32 μJ pulse energy at 1 MHz repetition rate corresponding to a peak power of 0.21 GW is demonstrated. The laser system based on chirped-pulse amplification (CPA) technique is seeded by a dispersion managed, nonlinear polarization evolution (NPE) mode-locked oscillator with spectrum bandwidth of 31 nm at 1040 nm and amplified by three fiber pre-amplifying stages and a rod type fiber main amplifying stage. The laser works with beam quality of M2 of 1.3 and power stability of 0.63% (root mean square, RMS) over 24 hours will be stable sources for industrial micromachining, medical therapy and scientific research.

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

A Power Efficient Audio Amplifier Combining Switching and Linear Techniques

NARCIS (Netherlands)

van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

1998-01-01

Integrated Class D audio amplifiers are very power efficient, but require an external filter which prevents further integration. Also due to this filter, large feedback factors are hard to realise, so that the load influences the distortion- and transfer characteristics. The amplifier presented in

75 GHz InP DHBT power amplifier based on two-stacked transistors

DEFF Research Database (Denmark)

Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

2017-01-01

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

Characterization of SOI monolithic detector system

Science.gov (United States)

Álvarez-Rengifo, P. L.; Soung Yee, L.; Martin, E.; Cortina, E.; Ferrer, C.

2013-12-01

A monolithic active pixel sensor for charged particle tracking was developed. This research is performed within the framework of an R&D project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) whose aim is to evaluate the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two chips were fabricated: TRAPPISTe-1 and TRAPPISTe-2. TRAPPISTe-1 was produced at the WINFAB facility at the Université catholique de Louvain (UCL), Belgium, in a 2 μm fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 was fabricated with the LAPIS 0.2 μm FD-SOI CMOS process. The electrical characterization on single transistor test structures and of the electronic readout for the TRAPPISTe series of monolithic pixel detectors was carried out. The behavior of the prototypes’ electronics as a function of the back voltage was studied. Results showed that both readout circuits exhibited sensitivity to the back voltage. Despite this unwanted secondary effect, the responses of TRAPPISTe-2 amplifiers can be improved by a variation in the circuit parameters.

Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

Science.gov (United States)

2017-08-14

networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high...simulations of MMIC (3–6 GHz, 28 V/180 mA) 1.75-mm HEMT power amplifier ............................................... 13 Fig. 20 Simple schematic...design simple , a single 1.75-mm high-electron-mobility transistor (HEMT) was used for a preliminary ideal design of the broadband power amplifier

Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

Accurate expressions for the power efficiency of a class-D power amplifier in a limit-cycle transmitter configuration

NARCIS (Netherlands)

Sarkeshi, M.; Mahmoudi, R.; Roermund, van A.H.M.

2009-01-01

Limit-cycle based, self-oscillating amplifiers are promising candidates for linear amplification of complex signals with high peak-to-average ratio, while maintaining high power efficiency. Limit-cycle transmitters employ switch class-D power amplifiers in order to achieve high Efficiency. In this

Solid state high power amplifier for driving the SLC injector klystron

International Nuclear Information System (INIS)

Judkins, J.G.; Clendenin, J.E.; Schwarz, H.D.

1985-03-01

The SLC injector klystron rf drive is now provided by a recently developed solid-state amplifier. The high gain of the amplifier permits the use of a fast low-power electronic phase shifter. Thus the SLC computer control system can be used to shift the phase of the high-power rf rapidly during the fill time of the injector accelerator section. These rapid phase shifts are used to introduce a phase-energy relationship in the accelerated electron pulse in conjunction with the operation of the injector bunch compressor. The amplifier, the method of controlling the rf phase, and the operational characteristics of the system are described. 5 refs., 4 figs

Design of mm-wave InP DHBT power amplifiers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Yan, Lei

2011-01-01

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

Very fast, high peak-power, planar triode amplifiers for driving optical gates

International Nuclear Information System (INIS)

Howland, M.M.; Davis, S.J.; Gagnon, W.L.

1979-01-01

Recent extensions of the peak power capabilities of planar triodes have made possible the latter's use as very fast pulse amplifiers, to drive optical gates within high-power Nd:glass laser chains. These pulse amplifiers switch voltages in the 20 kV range with rise times of a few nanoseconds, into crystal optical gates that are essentially capacitive loads. This paper describes a simplified procedure for designing these pulse amplifiers. It further outlines the use of bridged-T constant resistance networks to transform load capacitance into pure resistance, independent of frequency

Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

DEFF Research Database (Denmark)

Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

2007-01-01

due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

International Nuclear Information System (INIS)

Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

1990-01-01

A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

Carrier Distortion in Hysteretic Self-Oscillating Class-D Audio Power:Amplifiers: Analysis and Optimization

OpenAIRE

Høyerby, Mikkel Christian Kofod; Andersen, Michael A. E.

2009-01-01

An important distortion mechanism in hysteretic self-oscillating (SO) class-D (switch mode) power amplifiers-–carrier distortion-–is analyzed and an optimization method is proposed. This mechanism is an issue in any power amplifier application where a high degree of proportionality between input and output is required, such as in audio power amplifiers or xDSL drivers. From an average-mode point of view, carrier distortion is shown to be caused by nonlinear variation of the hysteretic compara...

A describing function approach to bipolar RF-power amplifier simulation

DEFF Research Database (Denmark)

Vidkjær, Jens

1981-01-01

A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

Minimizing Crosstalk in Self Oscillating Switch Mode Audio Power Amplifiers

DEFF Research Database (Denmark)

Knott, Arnold; Ploug, Rasmus Overgaard

2012-01-01

a method to minimize this phenomenon by improving the integrity of the various power distribution systems of the amplifier. The method is then applied to an amplifier built for this investigation. The results show that the crosstalk is suppressed with 30 dB, but is not entirely eliminated......The varying switching frequencies of self oscillating switch mode audio amplifiers have been known to cause interchannel intermodulation disturbances in multi channel configurations. This crosstalk phenomenon has a negative impact on the audio performance. The goal of this paper is to present...

Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Zhao Lixin; Jin Zhi; Liu Xinyu, E-mail: zhaolixin@ime.ac.c [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

2009-12-15

In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs. (semiconductor devices)

NASA satellite communications application research. Phase 2: Efficient high power, solid state amplifier for EFH communications

Science.gov (United States)

Benet, James

1993-01-01

The final report describes the work performed from 9 Jun. 1992 to 31 Jul. 1993 on the NASA Satellite Communications Application Research (SCAR) Phase 2 program, Efficient High Power, Solid State Amplifier for EHF Communications. The purpose of the program was to demonstrate the feasibility of high-efficiency, high-power, EHF solid state amplifiers that are smaller, lighter, more efficient, and less costly than existing traveling wave tube (TWT) amplifiers by combining the output power from up to several hundred solid state amplifiers using a unique orthomode spatial power combiner (OSPC).

W-band InP based HEMT MMIC low noise amplifiers

Science.gov (United States)

Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

2002-01-01

This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

International Nuclear Information System (INIS)

Takano, H.; Hosogi, K.; Kato, T.

1995-01-01

A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

77 FR 3386 - Export and Reexport License Requirements for Certain Microwave and Millimeter Wave Electronic...

Science.gov (United States)

2012-01-24

... microwave ``monolithic integrated circuits'' power amplifiers that meet certain criteria with respect to... packaged microwave ``monolithic integrated circuits'' (MMIC) power amplifiers that meet certain criteria.... 110825537-2038-02] RIN 0694-AF38 Export and Reexport License Requirements for Certain Microwave and...

Operation amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2008-01-01

To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

Application-specific architectures of CMOS monolithic active pixel sensors

Energy Technology Data Exchange (ETDEWEB)

Szelezniak, Michal [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France)]. E-mail: michal.szelezniak@ires.in2p3.fr; Besson, Auguste [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Claus, Gilles; Colledani, Claude; [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Degerli, Yavuz [CEA Saclay, DAPNIA, Gif-sur-Yvette Cedex (France); Deptuch, Grzegorz [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Deveaux, Michael [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); GSI, Planckstrasse 1, Darmstadt 64291 (Germany); Dorokhov, Andrei [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Dulinski, Wojciech [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Fourches, Nicolas [CEA Saclay, DAPNIA, Gif-sur-Yvette Cedex (France); Goffe, Mathieu [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Grandjean, Damien; Guilloux, Fabrice [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Heini, Sebastien [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France)]|[GSI, Planckstrasse 1, Darmstadt 64291 (Germany); Himmi, Abdelkader [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Hu, Christine [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France); Jaaskelainen, Kimmo; Li, Yan; Lutz, Pierre; Orsini, Fabienne [CEA Saclay, DAPNIA, Gif-sur-Yvette Cedex (France); Pellicioli, Michel; Shabetai, Alexandre; Valin, Isabelle; Winter, Marc [Institute de Recherches Subatomiques, 23 rue du Loess, Strasbourg 67037 Cedex 02 (France)

2006-11-30

Several development directions intended to adapt and optimize monolithic active pixel sensors for specific applications are presented in this work. The first example, compatible with the STAR microvertex upgrade, is based on a simple two-transistor pixel circuitry. It is suited for a long integration time, room-temperature operation and minimum power dissipation. In another approach for this application, a specific readout method is proposed, allowing optimization of the integration time independently of the full frame-readout time. The circuit consists of an in-pixel front-end voltage amplifier, with a gain on the order of five, followed by two analog memory cells. The extended version of this scheme, based on the implementation of more memory cells per pixel, is the solution considered for the outer layers of a microvertex detector at the international linear collider. For the two innermost layers, a circuit allowing fast frame scans together with on-line, on-chip data sparsification is proposed. The first results of this prototype demonstrate that the fixed pattern dispersion is reduced below a noise level of 15 e{sup -}, allowing the use of a single comparator or a low-resolution ADC per pixel column. A common element for most of the mentioned readout schemes is a low-noise, low power consumption, layout efficient in-pixel amplifier. A review of possible solutions for this element together with some experimental results is presented.

Two-stage, high power X-band amplifier experiment

International Nuclear Information System (INIS)

Kuang, E.; Davis, T.J.; Ivers, J.D.; Kerslick, G.S.; Nation, J.A.; Schaechter, L.

1993-01-01

At output powers in excess of 100 MW the authors have noted the development of sidebands in many TWT structures. To address this problem an experiment using a narrow bandwidth, two-stage TWT is in progress. The TWT amplifier consists of a dielectric (e = 5) slow-wave structure, a 30 dB sever section and a 8.8-9.0 GHz passband periodic, metallic structure. The electron beam used in this experiment is a 950 kV, 1 kA, 50 ns pencil beam propagating along an applied axial field of 9 kG. The dielectric first stage has a maximum gain of 30 dB measured at 8.87 GHz, with output powers of up to 50 MW in the TM 01 mode. In these experiments the dielectric amplifier output power is about 3-5 MW and the output power of the complete two-stage device is ∼160 MW at the input frequency. The sidebands detected in earlier experiments have been eliminated. The authors also report measurements of the energy spread of the electron beam resulting from the amplification process. These experimental results are compared with MAGIC code simulations and analytic work they have carried out on such devices

A review on power reducing methods of neural recording amplifiers

Directory of Open Access Journals (Sweden)

samira mehdipour

2016-10-01

Full Text Available Implantable multi-channel neural recording Microsystems comprise a large number of neural amplifiers, that can affect the overall power consumption and chip area of the analog part of the system.power, noise, size and dc offset are the main challenge faced by designers. Ideally the output of the opamp should be at zero volts when the inputs are grounded.In reality the input terminals are at slightly different dc potentials.The input offset voltage is defined as the voltage that must be applied between the two input terminals of the opamp to obtain zero volts at the output. Amplifier must have capability to reject this dc offset. First method that uses a capacitor feedback network with ac coupling of input devices to reject the offset is very popular in designs.very small low-cutoff frequency.The second method employs a closed-loop resistive feedback and electrode capacitance to form a highpass filter.Moreover,The third method adopts the symmetric floating resistor the feedback path of low noise amplifier to achieve low-frequency cutoff and rejects DC offset voltage. .In some application we can use folded cascade topology.The telescopic topology is a good candidate in terms of providing large gain and phase margin while dissipating small power. the cortical VLSI neuron model reducing power consumption of circuits.Power distribution is the best way to reduce power, noise and silicon area. The total power consumption of the amplifier array is reduced by applying the partial OTA sharing technique. The silicon area is reduced as a benefit of sharing the bulky capacitor.

Monolithic distributed power management for systems-on-chip (SoC); Gestion monolithique distribuee de puissance pour les systemes sur puce (SOC)

Energy Technology Data Exchange (ETDEWEB)

Abedinpour, S. [Motorola, Semiconductor Products Sector, Tempe (United States); Bakkaloglu, B. [Texas Instruments, Broadband Communications Group, Dallas, Texas (United States); Kiaei, S. [Arizona State Univ., Connection one Research Center, Tempe (United States)

2004-08-01

With increasing drive towards higher level of integration, lower cost, and longer battery life in wireless applications, there is a need for efficient monolithic DC-DC power converters. This tutorial paper summarizes the topology tradeoffs that are involved in the implementation of monolithic distributed power management in the future generations of SoCs for portable wireless applications. These circuits have a broad range of requirements including high power density, high energy efficiency, low noise, small size, and low cost. The advantages and disadvantages of each of the competing topologies, namely low-dropout linear, switched capacitor, and switched-mode DC-DC converters are examined in light of these requirements. (authors)

Design, construction and test of RF solid state power amplifier for IRANCYC-10

Science.gov (United States)

Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

2018-03-01

In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

KAUST Repository

Shen, Chao

2018-02-14

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

KAUST Repository

Shen, Chao; Ng, Tien Khee; Lee, Changmin; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2018-01-01

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

Power Efficiency Improvements through Peak-to-Average Power Ratio Reduction and Power Amplifier Linearization

Directory of Open Access Journals (Sweden)

Zhou G Tong

2007-01-01

Full Text Available Many modern communication signal formats, such as orthogonal frequency-division multiplexing (OFDM and code-division multiple access (CDMA, have high peak-to-average power ratios (PARs. A signal with a high PAR not only is vulnerable in the presence of nonlinear components such as power amplifiers (PAs, but also leads to low transmission power efficiency. Selected mapping (SLM and clipping are well-known PAR reduction techniques. We propose to combine SLM with threshold clipping and digital baseband predistortion to improve the overall efficiency of the transmission system. Testbed experiments demonstrate the effectiveness of the proposed approach.

A bit-rate flexible and power efficient all-optical demultiplexer realised by monolithically integrated Michelson interferometer

DEFF Research Database (Denmark)

Vaa, Michael; Mikkelsen, Benny; Jepsen, Kim Stokholm

1996-01-01

A novel bit-rate flexible and very power efficient all-optical demultiplexer using differential optical control of a monolithically integrated Michelson interferometer with MQW SOAs is demonstrated at 40 to 10 Gbit/s. Gain switched DFB lasers provide ultra stable data and control signals....

An RF Power Amplifier in a Digital CMOS Process

DEFF Research Database (Denmark)

Nielsen, Per Asbeck; Fallesen, Carsten

2002-01-01

A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...... is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA...... is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3 pi /8-8PSK) modulated signal....

TEDS Base Station Power Amplifier using Low-Noise Envelope Tracking Power Supply

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

2009-01-01

This paper demonstrates a highly linear and efficient TETRA enhanced data service (TEDS) base-station RF power amplifier (RFPA). Based on the well-known combination of an envelope tracking (ET) power supply and a linear class-A/B RFPA, adequate adjacent channel power ratio (ACPR) and wideband noise...... experimentally with a 9.6-dB peak-to-average 50-kHz 16 quadrature amplitude modulation TEDS carrier, the setup providing 44-dBm (25 W) average RF output power at 400 MHz with 44% dc-to-RF efficiency state-of-the-art ACPR of less than ${-}$67 dBc, switching noise artifacts around ${-}$ 85 dBc, and an overall rms...

Design of a power amplifier for the LAMPF proton storage ring transverse damper system

International Nuclear Information System (INIS)

Lunsford, J.S.

1981-01-01

A power amplifier has been designed to drive the 50-Ω stripline deflection structures in the transverse active damper of the Los Alamos 800-MeV Proton Storage Ring (PSR). The unit will provide 600-V peak-to-peak with a dc-to-100-MHz bandwidth. Other important characteristics include < 40-ns delay time, 50-dB voltage gain, and 4-ns risetime with < 5% overshoot and ringing. Because of the current-drive properties of the amplifier, two amplifiers could be combined to provide over 1000-V peak-to-peak into 50 Ω, with very little bandwidth degradation. Components in the power amplifier that represent new designs are a 20-tube distributed-amplifier output stage; a driver stage, using VMOS FET and bipolar transistors; a high-voltage probe, with good dc stability and 150-MHz bandwidth; a transient suppressor circuit, using PIN diodes to protect the transistorized drivers from tube arcing; a nonlinear amplifier to compensate for the nonlinear characteristics of the distributed amplifier; and a first-fail indicator circuit to aid in locating the prime causes of equipment failures

Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

Directory of Open Access Journals (Sweden)

Yanbin Hou

2016-01-01

Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

Design and Modeling of RF Power Amplifiers with Radial Basis Function Artificial Neural Networks

OpenAIRE

Ali Reza Zirak; Sobhan Roshani

2016-01-01

A radial basis function (RBF) artificial neural network model for a designed high efficiency radio frequency class-F power amplifier (PA) is presented in this paper. The presented amplifier is designed at 1.8 GHz operating frequency with 12 dB of gain and 36 dBm of 1dB output compression point. The obtained power added efficiency (PAE) for the presented PA is 76% under 26 dBm input power. The proposed RBF model uses input and DC power of the PA as inputs variables and considers output power a...

Investigation of Energy Consumption and Sound Quality for Class-D Audio Amplifiers using Tracking Power Supplies

DEFF Research Database (Denmark)

Yamauchi, Akira; Schneider, Henrik; Knott, Arnold

2015-01-01

power supply tracking and its influence on power losses, audio performance and environmental impact for a 130 W class-D amplifier prototype as well as a commercialized class-D amplifier. Both modeled and experimental results verify that a large improvement of efficiency can be achieved. The total...... harmonic is found to be unaffected by stepless power supply tracking due the high supply rejection ratio of the used amplifiers under test.......The main advantage of Class-D audio amplifiers is high efficiency which is often stated to be more than 90 % but at idle or low power levels the efficiency is much lower. The waste energy is an environmental concern, a concern in mobile applications where long battery operation is required...

Development of 350 MHz/1000 Watt intermediate power amplifier for 400 keV RFQ accelerator

International Nuclear Information System (INIS)

Pande, M.M.; Patel, N.R.; Shinde, K.R.; Rao, M.K.V.; Handu, V.K.

2005-01-01

Two numbers of high power RF systems, each delivering around 35 to 40 kW of power at 350 MHz are being developed in BARC. These High Power Amplifiers (HPA) cater to the total need of 70 kW of RF power required by the 400 keV (Deuterium) RFQ accelerator. This RFQ will replace the existing 400 keV DC accelerator of 14 MeV Neutron Generator. The RFQ will accelerate a deuterium beam from 50 keV to 400 keV to impinge upon a tritium target inside a sub critical assembly. Each of these 35 / 40 KW HPA requires a drive power of around 1000 / 1500 Watt respectively. Hence a intermediate power amplifier (IPA) bas been designed to deliver the power of 1000 Watt at the rate of 350 MHz. The paper describes the development of this amplifier

The design of a linear L-band high power amplifier for mobile communication satellites

Science.gov (United States)

Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

1990-01-01

A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

International Nuclear Information System (INIS)

Yan, S; Yan, X; Yu, H; Zhang, L; Guo, L; Sun, W; Hou, W; Lin, X

2013-01-01

We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO 4 oscillator, followed by an 880 nm diode-pumped Nd:YVO 4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M 2 were measured to be M x 2 =1.2 and M y 2 =1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

W-band Solid State Power Amplifier for Remote Sensing Radars, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

W-Band Solid State Power Amplifier for Remote Sensing Radars, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μm SOI technology

Science.gov (United States)

Soung Yee, L.; Alvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

2012-12-01

A monolithic active pixel sensor for charged particle tracking has been developed within the frame of a research and development project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology). TRAPPISTe aims to study the feasibility of developing a monolithic pixel sensor with SOI technology. TRAPPISTe-2 is the second prototype in this series and was fabricated with an OKI 0.20μm fully depleted (FD-SOI) CMOS process. This device contains test transistors and amplifiers, as well as two pixel matrices with integrated 3-transistor and amplifier readout electronics. The results presented are based on the first electrical measurements performed on the test structures and laser measurements on the pixel matrices.

Monolithic solid-state lasers for spaceflight

Science.gov (United States)

Krainak, Michael A.; Yu, Anthony W.; Stephen, Mark A.; Merritt, Scott; Glebov, Leonid; Glebova, Larissa; Ryasnyanskiy, Aleksandr; Smirnov, Vadim; Mu, Xiaodong; Meissner, Stephanie; Meissner, Helmuth

2015-02-01

A new solution for building high power, solid state lasers for space flight is to fabricate the whole laser resonator in a single (monolithic) structure or alternatively to build a contiguous diffusion bonded or welded structure. Monolithic lasers provide numerous advantages for space flight solid-state lasers by minimizing misalignment concerns. The closed cavity is immune to contamination. The number of components is minimized thus increasing reliability. Bragg mirrors serve as the high reflector and output coupler thus minimizing optical coatings and coating damage. The Bragg mirrors also provide spectral and spatial mode selection for high fidelity. The monolithic structure allows short cavities resulting in short pulses. Passive saturable absorber Q-switches provide a soft aperture for spatial mode filtering and improved pointing stability. We will review our recent commercial and in-house developments toward fully monolithic solid-state lasers.

Test of the TRAPPISTe monolithic detector system

Science.gov (United States)

Soung Yee, L.; Álvarez, P.; Martin, E.; Cortina, E.; Ferrer, C.

2013-12-01

A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source.

CERN-group conceptual design of a fast neutron operated high power energy amplifier

International Nuclear Information System (INIS)

Rubbia, C.; Rubio, J.A.; Buono, S.

1997-01-01

The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing

CERN-group conceptual design of a fast neutron operated high power energy amplifier

Energy Technology Data Exchange (ETDEWEB)

Rubbia, C; Rubio, J A [European Organization for Nuclear Research, CERN, Geneva (Switzerland); Buono, S [Laboratoire du Cyclotron, Nice (France); and others

1997-11-01

The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing. 84 refs, figs, tabs.

A highly linear power amplifier for WLAN

International Nuclear Information System (INIS)

Jin Jie; Shi Jia; Ai Baoli; Zhang Xuguang

2016-01-01

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. (paper)

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

Science.gov (United States)

Sullivan, Gerry

2001-01-01

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

NARCIS (Netherlands)

Vathulay, V.; Sowlati, T.; Leenaerts, D.M.W.

2001-01-01

In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit,

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2011-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, S.; Nauta, Bram

2007-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

Final installation and testing of the feedback power amplifier for the Scyllac feedback experiment

International Nuclear Information System (INIS)

Kutac, K.J.; Kewish, R.W. Jr.; Gribble, R.F.; Rawcliffe, A.S.; Miller, G.; Kemp, E.L.; Bartsch, R.R.

1975-01-01

The Scyllac feedback system consists of eight subsystems. The installation and testing of the many components and eight subsystems are described. The eight subsystems are: (1) ML-8618 power amplifiers; (2) dc plate and bias power supplies; (3) ac filament power supplies; (4) position detector and signal processor (intermediate amplifier); (5) l = 0 and l = 2 output load coils; (6) control system and interlock system; (7) computer controlled analog-to-digital transient recorders; and (8) cable distribution and cooling-water supply system

Highly-stable monolithic femtosecond Yb-fiber laser system based on photonic crystal fibers

DEFF Research Database (Denmark)

Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

2010-01-01

in the oscillator cavity for dispersion balancing and nonlinear optical limiting, and another one is used for low nonlinearity final pulse recompression. The chirped-pulse amplification and recompression of the 232-fs, 45-pJ/pulse oscillator output yields a final direct fiber-end delivery of 7.3-nJ energy pulses......A self-starting, passively stabilized, monolithic all polarizationmaintaining femtosecond Yb-fiber master oscillator / power amplifier with very high operational and environmental stability is demonstrated. The system is based on the use of two different photonic crystal fibers. One is used...... of around 297 fs duration. Our laser shows exceptional stability. No Q-switched modelocking events were detected during 4-days long observation. An average fluctuation of only 7.85 · 10−4 over the mean output power was determined as a result of more than 6-hours long measurement. The laser is stable towards...

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

International Nuclear Information System (INIS)

Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

2013-01-01

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

32-core erbium/ytterbium-doped multicore fiber amplifier for next generation space-division multiplexed transmission system

DEFF Research Database (Denmark)

Jain, Saurabh; Castro, Carlos; Jung, Yongmin

2017-01-01

We present a high-core-count 32-core multicore erbium/ytterbium-doped fiber amplifier (32c-MC-EYDFA) in a cladding pumped configuration. A side pumping technique is employed for ease of pump coupling in this monolithic all-fiber amplifier. A minimum gain of >17 dB and an average noise figure (NF)...

Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2008-01-01

An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

Design Methodology of High Power Distributed Amplifier Employing Broadband Impedance Transformer

DEFF Research Database (Denmark)

Narendra, Kumar; Zhurbenko, Vitaliy; Collantes, Juan Mari

2009-01-01

A novel topology of a high power distributed amplifier (DA) in combination with a broadband impedance transformer is presented. The advantages of the proposed topology are explored analytically and verified by a full-wave 3D simulations. Stability of the high power DA is verified with the pole...

Waveform measurement in mocrowave device characterization: impact on power amplifiers design

Directory of Open Access Journals (Sweden)

Roberto Quaglia

2016-07-01

Full Text Available This paper describes an example of a measurement setup enabling waveform measurements during the load-pull characterization of a microwave power device. The significance of this measurement feature is highlighted showing how waveform engineering can be exploited to design high efficiency microwave power amplifiers.

A monolithically integrated detector-preamplifier on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.; Spieler, H.

1990-02-01

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

Solid State Power Amplifier for 805 MegaHertz at the Los Alamos Neutron Science Center

International Nuclear Information System (INIS)

Davis, J.L.; Lyles, J.T.M.

1998-01-01

Particle accelerators for protons, electrons, and other ion species often use high-power vacuum tubes for RF amplification, due to the high RF power requirements to accelerate these particles with high beam currents. The final power amplifier stages driving large accelerators are unable to be converted to solid-state devices with the present technology. In some instances, radiation levels preclude the use of transistors near beamlines. Work is being done worldwide to replace the RF power stages under about ten kilowatts CW with transistor amplifiers, due to the lower maintenance costs and obsolescence of power tubes in these ranges. This is especially practical where the stages drive fifty Ohm impedance and are not located in high radiation zones. The authors are doing this at the Los Alamos Neutron Science Center (LANSCE) proton linear accelerator (linac) in New Mexico. They replaced a physically-large air-cooled UHF power amplifier using a tetrode electron tube with a compact water-cooled unit based on modular amplifier pallets developed at LANSCE. Each module uses eight push-pull bipolar power transistor pairs operated in class AB. Four pallets can easily provide up to 2,800 watts of continuous RF at 805 MHz. A radial splitter and combiner parallels the modules. This amplifier has proven to be completely reliable after over 10,000 hours of operation without failure. A second unit was constructed and installed for redundancy, and the old tetrode system was removed in 1998. The compact packaging for cooling, DC power, impedance matching, RF interconnection, and power combining met the electrical and mechanical requirements. CRT display of individual collector currents and RF levels is made possible with built-in samplers and a VXI data acquisition unit

A new principle for a high-efficiency power audio amplifier for use with a digital preamplifier

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt

1987-01-01

The use of class-B and class-D amplifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the usual principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043), Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

Development of FIR arrays with integrating amplifiers

Science.gov (United States)

Young, Erick T.

1988-08-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Efficiency Investigation of Switch Mode Power Amplifier Drving Low Impedance Transducers

DEFF Research Database (Denmark)

Iversen, Niels Elkjær; Schneider, Henrik; Knott, Arnold

2015-01-01

the amplifier rail voltage requirement as a function of the voice coil nominal resistance is presented. The method is based on a crest factor analysis of music signals and estimation of the electrical power requirement from a specific target of the sound pressure level. Experimental measurements confirms a huge...... performance leap in terms of efficiency compared to a conventional battery driven sound system. Future optimization of low voltage, high current amplifiers for low impedance loudspeaker drivers are discussed....

Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

Science.gov (United States)

England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

Power Scaling of Laser Oscillators and Amplifiers Based on Nd:YVO4

OpenAIRE

Yarrow, Michael James

2006-01-01

This thesis presents a strategy for power and brightness scaling in diode-end-pumped, master-oscillator-power-amplifier laser systems, based on Nd:YVOIssues relating to further power and brightness scaling are discussed as well as the potential applications of these laser sources as pump sources for frequency conversion in optical parametric devices.

Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

CERN Document Server

Broere, J; Gómez Martínez, Y; Rossi, M

2011-01-01

Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Science.gov (United States)

Wu, Yang; Xie, Hong-Quan; Xu, Zhou

2014-01-01

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

Linear CMOS RF power amplifiers a complete design workflow

CERN Document Server

Ruiz, Hector Solar

2013-01-01

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

Directory of Open Access Journals (Sweden)

Zhiqun Cheng

2017-01-01

Full Text Available The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

A highly linear power amplifier for WLAN

Science.gov (United States)

Jie, Jin; Jia, Shi; Baoli, Ai; Xuguang, Zhang

2016-02-01

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

International Nuclear Information System (INIS)

Chen, Zukun

2011-01-01

A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode R , a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

Energy Technology Data Exchange (ETDEWEB)

Chen, Zukun [Los Alamos National Laboratory

2011-01-01

A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode{sup R}, a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

Impact of gain saturation on the mode instability threshold in high-power fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Lægsgaard, Jesper

2014-01-01

We present a coupled-mode model of transverse mode instability in high-power fiber amplifiers, which takes the effect of gain saturation into account. The model provides simple semi-analytical formulas for the mode instability threshold, which are valid also for highly saturated amplifiers...

A power-efficient audio amplifier combining switching and linear techniques

NARCIS (Netherlands)

van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

1999-01-01

Integrated class-D audio amplifiers are very power efficient but require an external LC reconstruction filter, which prevents further integration. Also due to this filter, large feedback factors are hard to realize, so that the load influences the distortion and transfer characteristics. The 30 W

A Low-Power CMOS Trans-Impedance Amplifier for 2.5 Gb/S Optical Communication Systems

Directory of Open Access Journals (Sweden)

Mojgan Mohseni

2013-01-01

Full Text Available This Paper presents a new Trans-impedance amplifier for optical receiver circuits. The amplifier is based on parallel (R-C feedback topology which is optimized for power consumption and uses shunt-peaking technique to enhance the frequency bandwidth of the amplifier. However, the circuit is designed and simulated using 0.18µm CMOS technology parameters. As simulation results show, the amplifier has a gain of 67.5dBΩ, bandwidth of 3GHz while consumes only 12.16 mW power which shows a very good performance for using in a 2.5Gb/S (SONET OC-48 optical communication system. Finally, as the simulated Eye-Diagram shows, the circuit has a very good performance for a 2.5Gb/S system for a 10µA input current.

A noise reconfigurable current-reuse resistive feedback amplifier with signal-dependent power consumption for fetal ECG monitoring

NARCIS (Netherlands)

Song, Shuang; Rooijakkers, M.J.; Harpe, P.; Rabotti, C.; Mischi, M.; Van Roermund, A.H.M.; Cantatore, E.

2016-01-01

This paper presents a noise-reconfigurable resistive feedback amplifier with current-reuse technique for fetal ECG monitoring. The proposed amplifier allows for both tuning of the noise level and changing the power consumption according to the signal properties, minimizing the total power

Design and development of power supplies for high power IOT based RF amplifier

International Nuclear Information System (INIS)

Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

2013-01-01

Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

A Monolithically-Integrated μGC Chemical Sensor System

Directory of Open Access Journals (Sweden)

Davor Copic

2011-06-01

Full Text Available Gas chromatography (GC is used for organic and inorganic gas detection with a range of applications including screening for chemical warfare agents (CWA, breath analysis for diagnostics or law enforcement purposes, and air pollutants/indoor air quality monitoring of homes and commercial buildings. A field-portable, light weight, low power, rapid response, micro-gas chromatography (μGC system is essential for such applications. We describe the design, fabrication and packaging of mGC on monolithically-integrated Si dies, comprised of a preconcentrator (PC, μGC column, detector and coatings for each of these components. An important feature of our system is that the same mechanical micro resonator design is used for the PC and detector. We demonstrate system performance by detecting four different CWA simulants within 2 min. We present theoretical analyses for cost/power comparisons of monolithic versus hybrid μGC systems. We discuss thermal isolation in monolithic systems to improve overall performance. Our monolithically-integrated μGC, relative to its hybrid cousin, will afford equal or slightly lower cost, a footprint that is 1/2 to 1/3 the size and an improved resolution of 4 to 25%.

W-band power amplifier MMIC with 400 mW output power in 0.1 μm AlGaN/GaN technology

NARCIS (Netherlands)

Heijningen,M. van; Rodenburg, M.; Vliet, F.E. van; Massler, M.; Tessmann, A.; Brückner, F.; Müller, S.; Schwantuschke, D.; Quay; Narhi, T.

2012-01-01

The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10

High performance monolithic power management system with dynamic maximum power point tracking for microbial fuel cells.

Science.gov (United States)

Erbay, Celal; Carreon-Bautista, Salvador; Sanchez-Sinencio, Edgar; Han, Arum

2014-12-02

Microbial fuel cell (MFC) that can directly generate electricity from organic waste or biomass is a promising renewable and clean technology. However, low power and low voltage output of MFCs typically do not allow directly operating most electrical applications, whether it is supplementing electricity to wastewater treatment plants or for powering autonomous wireless sensor networks. Power management systems (PMSs) can overcome this limitation by boosting the MFC output voltage and managing the power for maximum efficiency. We present a monolithic low-power-consuming PMS integrated circuit (IC) chip capable of dynamic maximum power point tracking (MPPT) to maximize the extracted power from MFCs, regardless of the power and voltage fluctuations from MFCs over time. The proposed PMS continuously detects the maximum power point (MPP) of the MFC and matches the load impedance of the PMS for maximum efficiency. The system also operates autonomously by directly drawing power from the MFC itself without any external power. The overall system efficiency, defined as the ratio between input energy from the MFC and output energy stored into the supercapacitor of the PMS, was 30%. As a demonstration, the PMS connected to a 240 mL two-chamber MFC (generating 0.4 V and 512 μW at MPP) successfully powered a wireless temperature sensor that requires a voltage of 2.5 V and consumes power of 85 mW each time it transmit the sensor data, and successfully transmitted a sensor reading every 7.5 min. The PMS also efficiently managed the power output of a lower-power producing MFC, demonstrating that the PMS works efficiently at various MFC power output level.

Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

2011-01-01

We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

Power amplifier circuits for functional electrical stimulation systems

Directory of Open Access Journals (Sweden)

Delmar Carvalho de Souza

Full Text Available Abstract Introduction: Functional electrical stimulation (FES is a technique that has been successfully employed in rehabilitation treatment to mitigate problems after spinal cord injury (SCI. One of the most relevant modules in a typical FES system is the power or output amplifier stage, which is responsible for the application of voltage or current pulses of proper intensity to the biological tissue, applied noninvasively via electrodes, placed on the skin surface or inside the muscular tissue, closer to the nervous fibers. The goals of this paper are to describe and discuss about the main power output designs usually employed in transcutaneous functional electrical stimulators as well as safety precautions taken to protect patients. Methods A systematic review investigated the circuits of papers published in IEEE Xplore and ScienceDirect databases from 2000 to 2016. The query terms were “((FES or Functional electric stimulator and (circuit or design” with 274 papers retrieved from IEEE Xplore and 29 from ScienceDirect. After the application of exclusion criteria the amount of papers decreased to 9 and 2 from IEEE Xplore and ScienceDirect, respectively. One paper was inserted in the results as a technological contribution to the field. Therefore, 12 papers presented power stage circuits suitable to stimulate great muscles. Discussion The retrieved results presented relevant circuits with different electronic strategies and circuit components. Some of them considered patient safety strategies or aimed to preserve muscle homeostasis such as biphasic current application, which prevents charge accumulation in stimulated tissues as well as circuits that dealt with electrical impedance variation to keep the electrode-tissue interface within an electrochemical safe regime. The investigation revealed a predominance of design strategies using operational amplifiers in power circuits, current outputs, and safety methods to reduce risks of electrical

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

Energy Technology Data Exchange (ETDEWEB)

Xiao Xindong; Mao Luhong; Yu Changliang; Zhang Shilin; Xie Sheng, E-mail: xxd@tju.edu.c [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China)

2009-12-15

A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 {mu}m EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10{sup -9}. The chip dissipates 60 mW under a single 3.3 V supply. (semiconductor integrated circuits)

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

International Nuclear Information System (INIS)

Xiao Xindong; Mao Luhong; Yu Changliang; Zhang Shilin; Xie Sheng

2009-01-01

A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10 -9 . The chip dissipates 60 mW under a single 3.3 V supply. (semiconductor integrated circuits)

An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

International Nuclear Information System (INIS)

Ali, Mohammed H; Chakrabarty, C K; Hock, Goh C; Abdalla, Ahmed N

2013-01-01

Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

Science.gov (United States)

Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

2013-06-01

Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

Determination of over current protection thresholds for class D audio amplifiers

DEFF Research Database (Denmark)

Nyboe, Flemming; Risbo, L; Andreani, Pietro

2005-01-01

Monolithic class-D audio amplifiers typically feature built-in over current protection circuitry that shuts down the amplifier in case of a short circuit on the output speaker terminals. To minimize cost, the threshold at which the device shuts down must be set just above the maximum current...... that can flow in the loudspeaker during normal operation. The current required is determined by the complex loudspeaker impedance and properties of the music signals played. This work presents a statistical analysis of peak output currents when playing music on typical loudspeakers for home entertainment....

A New Principle for a High Efficiency Power Audio Amplifier for Use with a Digital Preamplifier

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt

1986-01-01

The use of class-B and class-D amlifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore, a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the current principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

Energy Technology Data Exchange (ETDEWEB)

Gaspar, M., E-mail: marcos.gaspar@psi.c [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Pedrozzi, M. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Ferreira, L.F.R. [Department of Physics, University of Coimbra, 3004-516 Coimbra (Portugal); Garvey, T. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland)

2011-05-01

We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

International Nuclear Information System (INIS)

Gaspar, M.; Pedrozzi, M.; Ferreira, L.F.R.; Garvey, T.

2011-01-01

We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

Science.gov (United States)

Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

2012-01-01

This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

A high power, continuous-wave, single-frequency fiber amplifier at 1091 nm and frequency doubling to 545.5 nm

International Nuclear Information System (INIS)

Stappel, M; Steinborn, R; Kolbe, D; Walz, J

2013-01-01

We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52%. Two different approaches to frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO 3 crystal and up to 19.3 W at 545.5 nm by frequency doubling with a lithium-triborate crystal in an external enhancement cavity. (paper)

Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

CERN Document Server

Kerhervé, Eric

2015-01-01

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

Science.gov (United States)

Ngo, Catherine

2001-01-01

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao

2017-02-07

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

Directory of Open Access Journals (Sweden)

M. Dirix

2009-01-01

Full Text Available A 10 W class-E RF power amplifier (PA is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

Development of a high power millimeter wave free-electron laser amplifier

International Nuclear Information System (INIS)

Bidwell, S.W.; Zhang, Z.X.; Antonsen, T.M. Jr.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Rodgers, J.; Freund, H.P.

1992-01-01

Progress on the development of a high-average-power millimeter wave free-electron laser amplifier is reported. Successful sheet electron beam propagation has been observed through a 54 cm long wiggler magnet. One hundred percent transport efficiency is reported with a 15 A, 0.1 cm x 2.0 cm, sheet electron beam through B w = 5.1 kG, λ w = 0.96 cm, planar electromagnet wiggler. Preliminary success with a novel, yet simple, method of side focusing using offset poles is reported. Status of development on a 94 GHz, 180 kW, pulsed amplifier is discussed with results from numerical simulation

Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2004-01-01

This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion...

Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

NARCIS (Netherlands)

Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

2005-01-01

In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

Energy Technology Data Exchange (ETDEWEB)

Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao, E-mail: tanxi@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

2010-12-15

A two-stage differential linear power amplifier (PA) fabricated by 0.18 {mu}m CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm{sup 2}. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

International Nuclear Information System (INIS)

Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao

2010-01-01

A two-stage differential linear power amplifier (PA) fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm 2 . System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

Frontend Receiver Electronics for High Frequency Monolithic CMUT-on-CMOS Imaging Arrays

Science.gov (United States)

Gurun, Gokce; Hasler, Paul; Degertekin, F. Levent

2012-01-01

This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for high-frequency intravascular ultrasound imaging. A custom 8-inch wafer is fabricated in a 0.35 μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulse-echo measurement. Transducer noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 MHz to 20 MHz. PMID:21859585

A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

NARCIS (Netherlands)

Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

1999-01-01

ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

Double-pass tapered amplifier diode laser with an output power of 1 W for an injection power of only 200 μW.

Science.gov (United States)

Bolpasi, V; von Klitzing, W

2010-11-01

A 1 W tapered amplifier requiring only 200 μW of injection power at 780 nm is presented in this paper. This is achieved by injecting the seeding light into the amplifier from its tapered side and feeding the amplified light back into the small side. The amplified spontaneous emission of the tapered amplifier is suppressed by 75 dB. The double-passed tapered laser, presented here, is extremely stable and reliable. The output beam remains well coupled to the optical fiber for a timescale of months, whereas the injection of the seed light did not require realignment for over a year of daily operation.

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China); Li, Z. H.; Zhang, Y. J.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

2013-11-15

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Science.gov (United States)

Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.

2013-11-01

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

High Efficiency GPS Block III L1 band Envelope Tracking Power Amplifier

Science.gov (United States)

2016-03-31

intermo asymmetric ri nction and is d 30.69MHz w measured with pe Amplifier e CGH40120F Sub-System: F e RFPA and E Fig. 7: Nati The switcher the...Paul T. The Efficiency W ack Power Am Dongsu Ki Bumman, "Hi lator for Enve ess Componen Hassan, M. ing power-sup z LTE Envelop ts Conference

Behavioral modeling of microwave power amplifiers using a look up table method

NARCIS (Netherlands)

Shen, Y.; Gajadharsing, J.; Tauritz, J.L.

2007-01-01

The possibility of building a microwave power amplifier (PA) behavioral model based on the look-up table principle is investigated. The model so constructed avoids the difficulties in model structure selection and/or its parameter estimation.

Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

OpenAIRE

Matiss, A.; Janssen, G.; Bertenburg, R. M.; Brockerhoff, W.; Tegude, F.J.

2004-01-01

To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect...

Theoretical analysis of mode instability in high-power fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

2013-01-01

We present a simple theoretical model of transverse mode instability in high-power rare-earth doped fiber amplifiers. The model shows that efficient power transfer between the fundamental and higher-order modes of the fiber can be induced by a nonlinear interaction mediated through the thermo......-optic effect, leading to transverse mode instability. The temporal and spectral characteristics of the instability dynamics are investigated, and it is shown that the instability can be seeded by both quantum noise and signal intensity noise, while pure phase noise of the signal does not induce instability...

A novel low-voltage operational amplifier for low-power pipelined ADCs

International Nuclear Information System (INIS)

Fan Mingjun; Ren Junyan; Guo Yao; Li Ning; Ye Fan; Li Lian

2009-01-01

A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

KAUST Repository

Ali, Anum Z.

2013-12-01

Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

KAUST Repository

Ali, Anum Z.; Hammi, Oualid; Al-Naffouri, Tareq Y.

2013-01-01

Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

Monoliths in Bioprocess Technology

Directory of Open Access Journals (Sweden)

Vignesh Rajamanickam

2015-04-01

Full Text Available Monolithic columns are a special type of chromatography column, which can be used for the purification of different biomolecules. They have become popular due to their high mass transfer properties and short purification times. Several articles have already discussed monolith manufacturing, as well as monolith characteristics. In contrast, this review focuses on the applied aspect of monoliths and discusses the most relevant biomolecules that can be successfully purified by them. We describe success stories for viruses, nucleic acids and proteins and compare them to conventional purification methods. Furthermore, the advantages of monolithic columns over particle-based resins, as well as the limitations of monoliths are discussed. With a compilation of commercially available monolithic columns, this review aims at serving as a ‘yellow pages’ for bioprocess engineers who face the challenge of purifying a certain biomolecule using monoliths.

S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

International Nuclear Information System (INIS)

Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

2005-01-01

S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

The Use of a Solid State Analog Television Transmitter as a Superconducting Electron Gun Power Amplifier

Energy Technology Data Exchange (ETDEWEB)

J.G. Kulpin, K.J. Kleman, R.A. Legg

2012-07-01

A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200 MHz signal and precisely control amplitude and phase.

Linearizing of Low Noise Power Amplifier Using 5.8GHz Double Loop Feedforward Linearization Technique

Directory of Open Access Journals (Sweden)

Abdulkareem Mokif Obais

2017-05-01

Full Text Available In this paper, a double loop feedforward linearization technique is analyzed and built with a MMIC low noise amplifier “HMC753” as main amplifier and a two-stage class-A power amplifier as error amplifier. The system is operated with 5V DC supply at a center frequency of 5.8GHz and a bandwidth of 500MHz. The proposed technique, increases the linearity of the MMIC amplifier from 18dBm at 1dB compression point to more than 26dBm. In addition, the proposed system is tested with OFDM signal and it reveals good response in maximizing the linearity region and eliminating distortions. The proposed system is designed and simulated onAdvanced Wave Research-Microwave Office (AWR-MWO.

A 240W Monolithic Class-D Audio Amplifier Output Stage

DEFF Research Database (Denmark)

Nyboe, Flemming; Kaya, Cetin; Risbo, Lars

2006-01-01

A single-channel class-D audio amplifier output stage outputs 240W undipped into 4Omega 0.1% open-loop THD+N allows using the device in a fully-digital audio signal path with no feedback. The output current capability is plusmn18A and the part is fabricated in a 0.4mum/1.8mum high-voltage Bi...

Strength of normal sections of NPP composite monolithic constructions with ribbed reinforced panels

International Nuclear Information System (INIS)

Klyashitskij, V.I.; Kirillov, A.P.

1980-01-01

Strength characteristics and recommendations on designing composite-monolytic structures of NPP with ribbed reinforced panels are considered. Ribbed reinforced panel consists of a system of cross ribs joined with a comparatively thin (25 mm thick) plate. The investigations were carried on using models representing columns symmetrically reinforced with reinforced panels with a low percent of reinforcing. The monolithic structures consisting of ribbed reinforced panels and cast concrete for making monoliths as well as monolithic having analogous strength characteristics of extended and compressed zones have similar strengths. It is shown that calculation of supporting power of composite-monolithic structures is performed according to techniques developed for monolithic structures. Necessity of structural transverse fittings no longer arises in case of corresponding calculational substitution of stability of compressed parts of fittings. Supporting power of a structure decreases not more than by 10% in the presence of cracks in the reinforced panels of the compressed zone. Application of composite-monolithic structures during the construction of the Kursk, Smolensk and Chernobylskaya NPPs permitted to decrease labour content and reduce periods of accomplishment of these works which saves over 6 million roubles

All-Optical Regenerative OTDM Add-Drop Multiplexing at 40 Gb/s using Monolithic InP Mach-Zehnder Interferometer

DEFF Research Database (Denmark)

Fischer, St.; Dülk, M.; Gamper, E.

2000-01-01

We present a novel method for all-optical add-drop multiplexing having regenerative capability for 40-Gb/s optical time-division multiplexed (OTDM) data using a semiconductor optical amplifier (SOA) based, monolithic Mach-Zehnder interferometer (MZI). Simultaneous dropping of one 10-Gb/s channel ...

Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

Extended Cann Model for Behavioral Modeling of Envelope Tracking Power Amplifiers

DEFF Research Database (Denmark)

Tafuri, Felice Francesco; Larsen, Torben

2013-01-01

This paper deals with behavioral modeling of power amplifiers (PAs) for envelope tracking (ET) applications. In such a scenario, the power supply modulation brings in several additional challenges for the system design and, similarly, it becomes more difficult to obtain an accurate and general PA...... by the ET operation. The model performance is tested modeling data-sets acquired from an ET test bench including a commercial RFMD PA and an envelope modulator designed using a commercial IC from TI....

A high-power millimeter-wave sheet beam free-electron laser amplifier

International Nuclear Information System (INIS)

Cheng, S.; Destler, W.W.; Granatstein, V.L.; Antonsen, T.M.; Levush, B.; Rodgers, J.; Zhang, Z.X.

1996-01-01

The results of experiments with a short period (9.6 mm) wiggler sheet electron beam (1.0 mm x 2.0 cm) millimeter-wave free electron laser (FEL) amplifier are presented. This FEL amplifier utilized a strong wiggler field for sheet beam confinement in the narrow beam dimension and an offset-pole side-focusing technique for the wide dimension beam confinement. The beam analysis herein includes finite emittance and space-charge effects. High-current beam propagation was achieved as a result of extensive analytical studies and experimental optimization. A design optimization resulted in a low sensitivity to structure errors and beam velocity spread, as well as a low required beam energy. A maximum gain of 24 dB was achieved with a 1-kW injected signal power at 86 GHz, a 450-kV beam voltage, 17-A beam current, 3.8-kG wiggler magnetic field, and a 74-period wiggler length. The maximum gain with a one-watt injected millimeter-wave power was observed to be over 30 dB. The lower gain at higher injection power level indicates that the device has approached saturation. The device was studied over a broad range of experimental parameters. The experimental results have a good agreement with expectations from a one-dimensional simulation code. The successful operation of this device has proven the feasibility of the original concept and demonstrated the advantages of the sheet beam FEL amplifier. The results of the studies will provide guidelines for the future development of sheet beam FEL's and/or other kinds of sheet beam devices. These devices have fusion application

Augmented twin-nonlinear two-box behavioral models for multicarrier LTE power amplifiers.

Science.gov (United States)

Hammi, Oualid

2014-01-01

A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory effects are observed, the augmented twin-nonlinear two-box models can improve the normalized mean square error by up to 3 dB for the same number of coefficients when compared to state-of-the-art twin-nonlinear two-box models. Furthermore, the augmented twin-nonlinear two-box models lead to the same performance as previously reported twin-nonlinear two-box models while requiring up to 80% less coefficients.

Muscle trade-offs in a power-amplified prey capture system.

Science.gov (United States)

Blanco, M Mendoza; Patek, S N

2014-05-01

Should animals operating at great speeds and accelerations use fast or slow muscles? The answer hinges on a fundamental trade-off: muscles can be maximally fast or forceful, but not both. Direct lever systems offer a straightforward manifestation of this trade-off, yet the fastest organisms use power amplification, not direct lever action. Power-amplified systems typically use slow, forceful muscles to preload springs, which then rapidly release elastic potential energy to generate high speeds and accelerations. However, a fast response to a stimulus may necessitate fast spring-loading. Across 22 mantis shrimp species (Stomatopoda), this study examined how muscle anatomy correlates with spring mechanics and appendage type. We found that muscle force is maximized through physiological cross-sectional area, but not through sarcomere length. Sit-and-wait predators (spearers) had the shortest sarcomere lengths (fastest contractions) and the slowest strike speeds. The species that crush shells (smashers) had the fastest speeds, most forceful springs, and longest sarcomeres. The origin of the smasher clade yielded dazzlingly high accelerations, perhaps due to the release from fast spring-loading for evasive prey capture. This study offers a new window into the dynamics of force-speed trade-offs in muscles in the biomechanical, comparative evolutionary framework of power-amplified systems. © 2014 The Author(s). Evolution © 2014 The Society for the Study of Evolution.

High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

International Nuclear Information System (INIS)

Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

1991-01-01

Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

Single-frequency, fully integrated, miniature DPSS laser based on monolithic resonator

Science.gov (United States)

Dudzik, G.; Sotor, J.; Krzempek, K.; Soboń, G.; Abramski, K. M.

2014-02-01

We present a single frequency, stable, narrow linewidth, miniature laser sources operating at 532 nm (or 1064 nm) based on a monolithic resonators. Such resonators utilize birefringent filters formed by YVO4 beam displacer and KTP or YVO4 crystals to force single frequency operation at 532 nm or 1064 nm, respectively. In both configurations Nd:YVO4 gain crystal is used. The resonators dimensions are 1x1x10.5 mm3 and 1x1x8.5 mm3 for green and infrared configurations, respectively. Presented laser devices, with total dimensions of 40x52x120 mm3, are fully equipped with driving electronics, pump diode, optical and mechanical components. The highly integrated (36x15x65 mm3) low noise driving electronics with implemented digital PID controller was designed. It provides pump current and resonator temperature stability of ±30 μA@650 mA and ±0,003ºC, respectively. The laser parameters can be set and monitored via the USB interface by external application. The developed laser construction is universal. Hence, the other wavelengths can be obtained only by replacing the monolithic resonator. The optical output powers in single frequency regime was at the level of 42 mW@532 nm and 0.5 W@1064 nm with the long-term fluctuations of ±0.85 %. The linewidth and the passive frequency stability under the free running conditions were Δν < 100 kHz and 3ṡ10-9@1 s integration time, respectively. The total electrical power supply consumption of laser module was only 4 W. Presented compact, single frequency laser operating at 532 nm and 1064 nm may be used as an excellent source for laser vibrometry, interferometry or seed laser for fiber amplifiers.

High power 352 MHz solid state amplifiers developed at the Synchrotron SOLEIL

Directory of Open Access Journals (Sweden)

P. Marchand

2007-11-01

Full Text Available In SOLEIL, 5 solid state amplifiers provide the required rf power at 352  MHz: 1×35  kW in the booster and 4×190  kW in the storage ring. They consist in a combination of a large number of 330 W elementary modules (1×147 in the booster and 4×724 in the storage ring, based on a design developed in-house, with MOSFETs (metal-oxide-semiconductor field-effect transistors, integrated circulators, and individual power supplies. Although quite innovative and challenging for the required power range, this technology is very attractive and presents significant advantages as compared to the more conventional vacuum tubes, klystrons, or inductive output tubes (IOTs. The booster and two of the storage ring power plants have been successfully commissioned and the first operational experience is quite satisfactory. The amplifiers proved to be very reliable as well as easy and flexible in operation; they have not been responsible for any beam time loss.

Monolithic all-PM femtosecond Yb-fiber laser stabilized with a narrow-band fiber Bragg grating and pulse-compressed in a hollow-core photonic crystal fiber

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper

2008-01-01

. The laser output is compressed in a spliced-on hollow-core PM photonic crystal fiber, thus providing direct end-of-the-fiber delivery of pulses of around 370 fs duration and 4 nJ energy with high mode quality. Tuning the pump power of the end amplifier of the laser allows for the control of output pulse......We report on an environmentally stable self-starting monolithic (i.e. without any free-space coupling) all-polarization-maintaining (PM) femtosecond Yb-fiber laser, stabilized against Q-switching by a narrow-band fiber Bragg grating and modelocked using a semiconductor saturable absorber mirror...

A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit technology

International Nuclear Information System (INIS)

Wang, De-bo; Liao, Xiao-ping

2009-01-01

A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit (MMIC) technology is presented in this paper. In this power sensor, the left section inputs the microwave power, while the right section inputs the dc power. Because of the symmetrical structure, this power sensor is created to provide more accurate microwave power measurement capability without mismatch uncertainty and restrain temperature drift. The loss model is built and the loss voltage is 0.8 mV at 20 GHz when the input power is 100 mW. This power sensor is designed and fabricated using GaAs MMIC technology. And it is measured in the frequency range up to 20 GHz with the input power in the −20 dBm to 19 dBm range. Over the 19 dBm dynamic range, the sensitivity can achieve about 0.2 mV mW −1 . The difference between the input powers in the two sections is below 0.1% for equal output voltages. For an amplitude modulation measurement, the carrier frequency is the main factor to influence the measurement results. In short, the key aspect of this power sensor is that the microwave power measurement can be replaced by a dc power measurement with precise wideband

Front-end receiver electronics for high-frequency monolithic CMUT-on-CMOS imaging arrays.

Science.gov (United States)

Gurun, Gokce; Hasler, Paul; Degertekin, F

2011-08-01

This paper describes the design of CMOS receiver electronics for monolithic integration with capacitive micromachined ultrasonic transducer (CMUT) arrays for highfrequency intravascular ultrasound imaging. A custom 8-inch (20-cm) wafer is fabricated in a 0.35-μm two-poly, four-metal CMOS process and then CMUT arrays are built on top of the application specific integrated circuits (ASICs) on the wafer. We discuss advantages of the single-chip CMUT-on-CMOS approach in terms of receive sensitivity and SNR. Low-noise and high-gain design of a transimpedance amplifier (TIA) optimized for a forward-looking volumetric-imaging CMUT array element is discussed as a challenging design example. Amplifier gain, bandwidth, dynamic range, and power consumption trade-offs are discussed in detail. With minimized parasitics provided by the CMUT-on-CMOS approach, the optimized TIA design achieves a 90 fA/√Hz input-referred current noise, which is less than the thermal-mechanical noise of the CMUT element. We show successful system operation with a pulseecho measurement. Transducer-noise-dominated detection in immersion is also demonstrated through output noise spectrum measurement of the integrated system at different CMUT bias voltages. A noise figure of 1.8 dB is obtained in the designed CMUT bandwidth of 10 to 20 MHz.

A 240W Monolithic Class-D Audio Amplifier Output Stage

OpenAIRE

Nyboe, Flemming; Kaya, Cetin; Risbo, Lars; Andreani, Pietro

2006-01-01

A single-channel class-D audio amplifier output stage outputs 240W undipped into 4Omega 0.1% open-loop THD+N allows using the device in a fully-digital audio signal path with no feedback. The output current capability is plusmn18A and the part is fabricated in a 0.4mum/1.8mum high-voltage BiCMOS process. Over-current sensing protects the output from short circuits.

Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

Science.gov (United States)

Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

2009-01-01

In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

DEFF Research Database (Denmark)

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

2005-01-01

This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

IOT based RF power systems as an alternative to klystron amplifier in Indus-2 at the rate 505.812 MHz

International Nuclear Information System (INIS)

Deo, R.K.; Jain, M.K.; Kumar, Gautam; Lad, Mahendra; Badapanda, M.K.; Bagre, Sunil; Upadhyay, Rinki; Tripathi, Akhilesh; Rao, J.N.; Pandiyar, Mohan; Hannurkar, P.R.

2013-01-01

Due to non-availability of replacement Klystron tube in Indus-2, an IOT based high power RF amplifier system is realized. It is based on E2V make 80 kW IOTD2130 tube with its circuit assembly IMD2000ST. This amplifier system is easily available commercially due to its application in DTV broadcast. It has inherent advantages over klystron amplifier viz. high efficiency (η), less phase and amplitude sensitivity to HV ripple, higher linearity, compactness and less cooling requirement. This high power IOT amplifier is tested with its required control system, cooling system, electron gun auxiliary supplies, beam supply and focusing supply. The nominal beam voltage for this IOT is -36 kV however amplifier was tested successfully with indigenously developed -32 kV, crowbar less power supply. The optimum load impedance for IOT beam was calculated for this bias voltage ( 32kV). For the required load impedance, coupling coefficient (β) of output coupler to the O/P cavity was estimated and accordingly loop angle was adjusted. The amplifier has been tested up to 50 kW with amplifier efficiency 60% and gain 23 dB at - 32 kV beam voltage. (author)

Frequency dependent loss analysis and minimization of system losses in switchmode audio power amplifiers

DEFF Research Database (Denmark)

Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

2014-01-01

In this paper, frequency dependent losses in switch-mode audio power amplifiers are analyzed and a loss model is improved by taking the voltage dependence of the parasitic capacitance of MOSFETs into account. The estimated power losses are compared to the measurement and great accuracy is achieved...

Analysis of Lifetime Data for the Linac 201 MHz Power Amplifiers

International Nuclear Information System (INIS)

McCrory, Elliot; Webber, Robert C.

2002-01-01

This document analyzes data on the lifetime of the 201-MHz triode power amplifier (PA) vacuum tube, model number 7835, used in the low-energy half of the Linac. We observe that a 7835 power amplifier vacuum tube has historically provided about one and one-third years service in the Linac. The lifetime of recently re-manufactured tubes is somewhat less, but it is not clear if this is because the manufacturer is ''loosing their touch,'' or because tubes cannot be effectively rebuilt after a certain number of times. Taking into account the expected tube lifetimes, the statistical fluctuations on this number, and the amount of time it takes for the manufacturer to make good tubes, we require about 14 tubes either operating, ready as good spares or being manufactured, in order to have sufficient spares to run the Linac. As a hedge against supplier drop out, we need to increase our inventory of good spare tubes by about three tubes per year for the next few years

A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension

Directory of Open Access Journals (Sweden)

Shichang Chen

2018-01-01

Full Text Available This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same operating band, saturation power is larger than 43.6 dBm and drain efficiency is higher than 53%.

Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

Science.gov (United States)

Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

2012-04-09

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

International Nuclear Information System (INIS)

Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

2006-01-01

In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

DEFF Research Database (Denmark)

Champagne, A.; Lestrade, Michel; Camel, Jérôme

2004-01-01

The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

Directory of Open Access Journals (Sweden)

Mahammad A. Hannan

2014-12-01

Full Text Available With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil’s mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning

Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

Science.gov (United States)

Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

2014-01-01

With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of

High power X-band coaxial amplifier experiments

International Nuclear Information System (INIS)

Davis, T.J.; Nation, J.A.

1991-01-01

Studies are continuing on the development of X-band coaxial microwave amplifiers as a source for next generation linear colliders. Coaxial amplifiers employ an annular electron beam propagating between inner and outer drift tube conductors, a configuration which allows large increases in beam current over standard pencil beam amplifiers. Large average diameter systems may still be used without mode competition since TM mode cutoff frequencies are controlled by the separation between conductors. A number of amplifier configurations are being studied, all primed by a driven initial cavity which resonates around 9 GHz. Simple theory of coaxial systems and particle-in-cell simulations are presented, as well as initial experimental results using a 420 keV, 7-8 kA, 9 cm diameter annular beam

Thermal effects in high average power optical parametric amplifiers.

Science.gov (United States)

Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

2013-03-01

Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given.

NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

Science.gov (United States)

Benet, James

1994-01-01

This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

Science.gov (United States)

Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

2014-01-01

This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom K.

2012-01-01

In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

Multi-pass amplifier architecture for high power laser systems

Science.gov (United States)

Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

2014-04-01

A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

Class-E Amplifier Design Improvements for GSM Frequencies

Directory of Open Access Journals (Sweden)

Z. Nadir

2011-06-01

Full Text Available Efficient power amplifiers are essential in portable battery-operated systems such as mobile phones. Also, the power amplifier (PA is the most power-consuming building block in the transmitter of a portable system. This paper investigates how the efficiency of the power amplifier (which is beneficial for multiple applications in communcation sector can be improved by increasing the efficiency of switching mode class E power amplifiers for frequencies of 900 MHz and 1800 MHz. The paper tackles modeling, design improvements and verification through simulation for higher efficiencies. This is the continuation of previous work by the authors. These nonlinear power amplifiers can only amplify constant-envelope RF signals without introducing significant distortion. Mobile systems such as Advanced Mobile Phone System (AMPS and Global System for Mobile communications (GSM use modulation schemes which generate constant amplitude RF outputs in order to use efficient but nonlinear power amplifiers. Improvements in designs are suggested and higher efficiencies are achieved, to the tune of 67.1% (for 900 MHz and 67.0% (1800 MHz.

Improvement of out-of-band Behaviour in Switch-Mode Amplifiers and Power Supplies by their Modulation Topology

DEFF Research Database (Denmark)

Knott, Arnold

2010-01-01

Switch-mode power electronics is disturbing other electronic circuits by emission of electromagnetic waves and signals. To allow transmission of information, a set of regulatory rules (electromagnetic compatibility (EMC)) were created to limit this disturbance. To fulfill those rules in power...... electronics, shielding and filtering is required, which is limiting the size reduction. The motivation for this project was to find alternative ways to avoid trouble with interference of switch-mode power electronics and transmission and receiver circuits. An especial focus is given to audio power amplifiers....... After a historical overview and description of interaction between power electronics and electromagnetic compatibility (chapter 1), the thesis will first show the impact of the high frequency signals on the audio performance of switch-mode audio power amplifiers (chapter 2). Therefore the work of others...

A low-power wide range transimpedance amplifier for biochemical sensing.

Science.gov (United States)

Rodriguez-Villegas, Esther

2007-01-01

This paper presents a novel low voltage and low power transimpedance amplifier for amperometric potentiostats. The power is optimized by having three different gain settings for different current ranges, which can be programmed with a biasing current. The voltage ranges have been optimized by using FGMOS transistors in a second voltage amplification stage that simultaneously allow for offset calibration as well as independent biasing of the gates. The circuit operates with input currents from 1 pA to 1 microA, with a maximum power supply voltage of 1.5 V and consumes 82.5 nW, 9.825 microW, 47.325 microW for currents varying from (1 pA, 0.25 nA), (0.25 nA, 62.5 nA) and (62.5 nA, 1 microA) respectively.

An implantable integrated low-power amplifier-microelectrode array for Brain-Machine Interfaces.

Science.gov (United States)

Patrick, Erin; Sankar, Viswanath; Rowe, William; Sanchez, Justin C; Nishida, Toshikazu

2010-01-01

One of the important challenges in designing Brain-Machine Interfaces (BMI) is to build implantable systems that have the ability to reliably process the activity of large ensembles of cortical neurons. In this paper, we report the design, fabrication, and testing of a polyimide-based microelectrode array integrated with a low-power amplifier as part of the Florida Wireless Integrated Recording Electrode (FWIRE) project at the University of Florida developing a fully implantable neural recording system for BMI applications. The electrode array was fabricated using planar micromachining MEMS processes and hybrid packaged with the amplifier die using a flip-chip bonding technique. The system was tested both on bench and in-vivo. Acute and chronic neural recordings were obtained from a rodent for a period of 42 days. The electrode-amplifier performance was analyzed over the chronic recording period with the observation of a noise floor of 4.5 microVrms, and an average signal-to-noise ratio of 3.8.

A high power cross-field amplifier at X-Band

International Nuclear Information System (INIS)

Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

1991-05-01

A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs

High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

OpenAIRE

Kühn, J.

2011-01-01

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

Science.gov (United States)

Thakur, S. K.; Kumar, Y.

2018-05-01

This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

A low power bipolar amplifier integrated circuit for the ZEUS silicon strip system

Energy Technology Data Exchange (ETDEWEB)

Barberis, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Cartiglia, N. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Dorfan, D.E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Spencer, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States))

1993-05-01

A fast low power bipolar chip consisting of 64 amplifier-comparators has been developed for use with silicon strip detectors for systems where high radiation levels and high occupancy considerations are important. The design is described and test results are presented. (orig.)

The design study of the high power solid-state amplifier in S-band

International Nuclear Information System (INIS)

Tozyo, E.; Kobayashi, K.; Yoshida, K.

1976-01-01

We have designed the 500W high power solid-state amplifier for the microwave system of INS electron linac. In this design study the output pulse power level of each module is set as possible as high, so the total number of elements is well reduced within the present microwave technics. In comparison with TWTA highly stabilized and maintenance-free operations are expected with 5 years' MTF. (auth.)

Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration. (au)

Maximizing power output from continuous-wave single-frequency fiber amplifiers.

Science.gov (United States)

Ward, Benjamin G

2015-02-15

This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.

Study of the Powerful Nd:YLF Laser Amplifiers for the CTF3 Photoinjectors

CERN Document Server

Petrarca, M; Luchinin, G; Divall, M

2011-01-01

A high-power neodymium-doped yttrium lithium fluoride (Nd:YLF) mode-locked 1.5-GHz laser currently used to drive the two photoinjectors of the Compact Linear Collider Test Facility project at the European Organization for Nuclear Research is described. A phenomenological characterization of the two powerful Nd:YLF amplifiers is presented and compared with the measurements. The laser system operates in a saturated steady-state mode. This mode provides good shot-to-shot stability with pulse train mean power in the 10 kW range.

Challenges in higher order mode Raman amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Nielsen, Kristian; Friis, Søren Michael Mørk

2015-01-01

A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed......A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed...

A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

International Nuclear Information System (INIS)

Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

1990-01-01

A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, ∼1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length (∼1 m) of short period (λ ω = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab

Simultaneous all-optical add and drop multiplexing of 40-Gbit/s OTDM signals using monolithically integrated Mach-Zehnder interferometer

DEFF Research Database (Denmark)

Jepsen, Kim Stokholm; Mikkelsen, Benny; Vaa, Michael

1998-01-01

Simultaneous all-optical add and drop multiplexing of a 40-Gbit/s OTDM signal using a monolithically integrated semiconductor optical amplifier/Mach Zehnder interferometer (SOA-MZI) is demonstrated. While maintaining a penalty of 1.3 dB for the add operation the sensitivity for the demultiplexed ...... signal is -34.4 dBm...

Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

Directory of Open Access Journals (Sweden)

M. Schleyer

2017-09-01

Full Text Available This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. This enables an in-depth study of physical causes and helps to implement compensation techniques at design stage. On the one hand, this circuit investigation is optimized using an automated SystemC model parametrized with real device and measurement values. Hence, computation time is widely reduced which shortens design cycles. On the other hand, the implementation of the derived circuit compensation means will reduce the complexity of digital pre-distortion due to a reduced memory-effect induced AM/AM and AM/PM hysteresis. The approach is demonstrated on a 65 nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals. In fact, mismatch could be reduced by more than 8 %.

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

DEFF Research Database (Denmark)

Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

2013-01-01

This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

Robust Power Allocation for Multi-Carrier Amplify-and-Forward Relaying Systems

KAUST Repository

Rao, Anlei

2012-09-08

It has been shown that adaptive power allocation can provide a substantial performance gain in wireless communication systems when perfect channel state information (CSI) is available at the transmitter. However when only imperfect CSI is available, the performance may degrade significantly, and as such robust power allocation schemes have been developed to minimize the effects of this degradation. In this paper, we investigate power allocation strategies for multicarrier systems, in which each subcarrier employs single amplify-and-forward (AF) relaying scheme. Optimal power allocation schemes are proposed by maximizing the approximated channel capacity under aggregate power constraint (APC) and separate power constraint (SPC). By comparison with the uniform power allocation scheme and the best channel power allocation scheme, we confirm that both the APC and SPC schemes achieve a performance gain over benchmark schemes. In addition, the impact of channel uncertainty is also considered in this paper by modeling the uncertainty regions as bounded sets, and results show that the uncertainty can degrade the worst-case performance significantly.

Temperature Characteristics of Monolithically Integrated Wavelength-Selectable Light Sources

International Nuclear Information System (INIS)

Han Liang-Shun; Zhu Hong-Liang; Zhang Can; Ma Li; Liang Song; Wang Wei

2013-01-01

The temperature characteristics of monolithically integrated wavelength-selectable light sources are experimentally investigated. The wavelength-selectable light sources consist of four distributed feedback (DFB) lasers, a multimode interferometer coupler, and a semiconductor optical amplifier. The oscillating wavelength of the DFB laser could be modulated by adjusting the device operating temperature. A wavelength range covering over 8.0nm is obtained with stable single-mode operation by selecting the appropriate laser and chip temperature. The thermal crosstalk caused by the lateral heat spreading between lasers operating simultaneously is evaluated by oscillating-wavelength shift. The thermal crosstalk approximately decreases exponentially as the increasing distance between lasers

Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

DEFF Research Database (Denmark)

Thompson, M.G.; Marinelli, C.; Chu, Y.

Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

Energy Technology Data Exchange (ETDEWEB)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

2009-06-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

International Nuclear Information System (INIS)

Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

2009-01-01

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

Science.gov (United States)

Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard

2012-01-01

Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to

High-energy master oscillator power amplifier with near-diffraction-limited output based on ytterbium-doped PCF fiber

Science.gov (United States)

Li, Rao; Qiao, Zhi; Wang, Xiaochao; Fan, Wei; Lin, Zunqi

2017-10-01

With the development of fiber technologies, fiber lasers are able to deliver very high power beams and high energy pulses which can be used not only in scientific researches but industrial fields (laser marking, welding,…). The key of high power fiber laser is fiber amplifier. In this paper, we present a two-level master-oscillator power amplifier system at 1053 nm based on Yb-doped photonic crystal fibers. The system is used in the front-end of high power laser facility for the amplification of nano-second pulses to meet the high-level requirements. Thanks to the high gain of the system which is over 50 dB, the pulse of more than 0.89 mJ energy with the nearly diffraction-limited beam quality has been obtained.

An ultra-low-power pulse oximeter implemented with an energy-efficient transimpedance amplifier.

Science.gov (United States)

Tavakoli, M; Turicchia, L; Sarpeshkar, R

2010-02-01

Pulse oximeters are ubiquitous in modern medicine to noninvasively measure the percentage of oxygenated hemoglobin in a patient's blood by comparing the transmission characteristics of red and infrared light-emitting diode light through the patient's finger with a photoreceptor. We present an analog single-chip pulse oximeter with 4.8-mW total power dissipation, which is an order of magnitude below our measurements on commercial implementations. The majority of this power reduction is due to the use of a novel logarithmic transimpedance amplifier with inherent contrast sensitivity, distributed amplification, unilateralization, and automatic loop gain control. The transimpedance amplifier, together with a photodiode current source, form a high-performance photoreceptor with characteristics similar to those found in nature, which allows LED power to be reduced. Therefore, our oximeter is well suited for portable medical applications, such as continuous home-care monitoring for elderly or chronic patients, emergency patient transport, remote soldier monitoring, and wireless medical sensing. Furthermore, our design obviates the need for an A-to-D and digital signal processor and leads to a small single-chip solution. We outline how extensions of our work could lead to submilliwatt oximeters.

Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

Science.gov (United States)

Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

2009-04-01

We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

A column level, low power, 1 M sample/s double ramp A/D converter for monolithic active pixel sensors in high energy physics

International Nuclear Information System (INIS)

Pillet, N.; Heini, S.; Hu, Y.

2010-01-01

Monolithic active pixel sensors (MAPS) using standard low cost CMOS technologies available from industrial manufacturers have demonstrated excellent tracking performances for minimum ionizing particles. The need for highly granular, fast, thin sensors with a full digital output drives an R and D effort, aiming to design and optimize a low power high speed A/D converter integrated at the column level. Following this main issue, a double digital ramp A/D converter has been proposed for CMOS monolithic active pixel sensors in this paper. This A/D converter responds to the constraints of size, power dissipation and precision for CMOS sensors for particle detection. It also represents a first step in order to reach the high speed of conversion needed for this kind of application. The A/D converter has a resolution of 4 bits for conversion speed of 1 M sample/s with only 264 μW of static consumption in a very particular pitch of 25 μmx900 μm.

Recent advances in the preparation and application of monolithic capillary columns in separation science

Energy Technology Data Exchange (ETDEWEB)

Hong, Tingting; Yang, Xi; Xu, Yujing [Department of Analytical Chemistry, China Pharmaceutical University, Nanjing, 210009 (China); Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing, 210009 (China); Ji, Yibing, E-mail: jiyibing@msn.com [Department of Analytical Chemistry, China Pharmaceutical University, Nanjing, 210009 (China); Key Laboratory of Drug Quality Control and Pharmacovigilance, Ministry of Education, Nanjing, 210009 (China)

2016-08-10

Novel column technologies involving various materials and efficient reactions have been investigated for the fabrication of monolithic capillary columns in the field of analytical chemistry. In addition to the development of these miniaturized systems, a variety of microscale separation applications have achieved noteworthy results, providing a stepping stone for new types of chromatographic columns with improved efficiency and selectivity. Three novel strategies for the preparation of capillary monoliths, including ionic liquid-based approaches, nanoparticle-based approaches and “click chemistry”, are highlighted in this review. Furthermore, we present the employment of state-of-the-art capillary monolithic stationary phases for enantioseparation, solid-phase microextraction, mixed-mode separation and immobilized enzyme reactors. The review concludes with recommendations for future studies and improvements in this field of research. - Highlights: • Preparation of novel monolithic capillary columns have shown powerful potential in analytical chemistry field. • Various materials including ionic liquids and nanoparticles involved into capillary monolithic micro-devices are concluded. • Click chemistry strategy applied for preparing monolithic capillary columns is reviewed. • Recent strategies utilized in constructing different capillary monoliths for enantiomeric separation are summarized. • Advancement of capillary monoliths for complex samples analysis is comprehensively described.

Recent advances in the preparation and application of monolithic capillary columns in separation science

International Nuclear Information System (INIS)

Hong, Tingting; Yang, Xi; Xu, Yujing; Ji, Yibing

2016-01-01

Novel column technologies involving various materials and efficient reactions have been investigated for the fabrication of monolithic capillary columns in the field of analytical chemistry. In addition to the development of these miniaturized systems, a variety of microscale separation applications have achieved noteworthy results, providing a stepping stone for new types of chromatographic columns with improved efficiency and selectivity. Three novel strategies for the preparation of capillary monoliths, including ionic liquid-based approaches, nanoparticle-based approaches and “click chemistry”, are highlighted in this review. Furthermore, we present the employment of state-of-the-art capillary monolithic stationary phases for enantioseparation, solid-phase microextraction, mixed-mode separation and immobilized enzyme reactors. The review concludes with recommendations for future studies and improvements in this field of research. - Highlights: • Preparation of novel monolithic capillary columns have shown powerful potential in analytical chemistry field. • Various materials including ionic liquids and nanoparticles involved into capillary monolithic micro-devices are concluded. • Click chemistry strategy applied for preparing monolithic capillary columns is reviewed. • Recent strategies utilized in constructing different capillary monoliths for enantiomeric separation are summarized. • Advancement of capillary monoliths for complex samples analysis is comprehensively described.

Low-Power Amplifier-Discriminators for High Time Resolution Detection

CERN Document Server

Despeisse, M; Anghinolfi, F; Tiuraniemi, S; Osmic, F; Riedler, P; Kluge, A; Ceccucci, A

2009-01-01

Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 mu W per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in h...

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar; Alouini, Mohamed-Slim; Chen, Yunfei; Radaydeh, Redha M.

2012-01-01

In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized

Efficient power allocation for fixed-gain amplify-and-forward relaying in rayleigh fading

KAUST Repository

Zafar, Ammar

2013-06-01

In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) optimal power allocation to maximize the end-to-end signal-to-noise ratio (SNR) and 2) minimizing the total consumed power while maintaining the end-to-end SNR over a threshold value. We assume that the relays have knowledge of only the channel statistics of all the links. We show that the SNR maximization problem is concave and the power minimization problem is convex. Hence, we solve the problems through convex programming. Numerical results show the benefit of allocating power optimally rather than uniformly. © 2013 IEEE.

Spectral Analysis of Polynomial Nonlinearity with Applications to RF Power Amplifiers

Directory of Open Access Journals (Sweden)

G. Tong Zhou

2004-09-01

Full Text Available The majority of the nonlinearity in a communication system is attributed to the power amplifier (PA present at the final stage of the transmitter chain. In this paper, we consider Gaussian distributed input signals (such as OFDM, and PAs that can be modeled by memoryless or memory polynomials. We derive closed-form expressions of the PA output power spectral density, for an arbitrary nonlinear order, based on the so-called Leonov-Shiryaev formula. We then apply these results to answer practical questions such as the contribution of AM/PM conversion to spectral regrowth and the relationship between memory effects and spectral asymmetry.

Efficiency Optimization in Class-D Audio Amplifiers

DEFF Research Database (Denmark)

Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

2015-01-01

This paper presents a new power efficiency optimization routine for designing Class-D audio amplifiers. The proposed optimization procedure finds design parameters for the power stage and the output filter, and the optimum switching frequency such that the weighted power losses are minimized under...... the given constraints. The optimization routine is applied to minimize the power losses in a 130 W class-D audio amplifier based on consumer behavior investigations, where the amplifier operates at idle and low power levels most of the time. Experimental results demonstrate that the optimization method can...... lead to around 30 % of efficiency improvement at 1.3 W output power without significant effects on both audio performance and the efficiency at high power levels....

X-Parameter Based Modelling of Polar Modulated Power Amplifiers

DEFF Research Database (Denmark)

Wang, Yelin; Nielsen, Troels Studsgaard; Sira, Daniel

2013-01-01

X-parameters are developed as an extension of S-parameters capable of modelling non-linear devices driven by large signals. They are suitable for devices having only radio frequency (RF) and DC ports. In a polar power amplifier (PA), phase and envelope of the input modulated signal are applied...... at separate ports and the envelope port is neither an RF nor a DC port. As a result, X-parameters may fail to characterise the effect of the envelope port excitation and consequently the polar PA. This study introduces a solution to the problem for a commercial polar PA. In this solution, the RF-phase path...... PA for simulations. The simulated error vector magnitude (EVM) and adjacent channel power ratio (ACPR) were compared with the measured data to validate the model. The maximum differences between the simulated and measured EVM and ACPR are less than 2% point and 3 dB, respectively....

Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

International Nuclear Information System (INIS)

Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

2013-01-01

A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

Science.gov (United States)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

Transmission characteristics of acoustic amplifier in thermoacoustic engine

International Nuclear Information System (INIS)

Sun Daming; Qiu Limin; Wang Bo; Xiao Yong

2008-01-01

Thermoacoustic engines are promising in practical applications for the merits of simple configuration, reliable operation and environmentally friendly working gas. An acoustic amplifier can increase the output pressure amplitude of a thermoacoustic engine (TE) and improve the matching between the engine and its load. In order to make full use of an acoustic amplifier, the transmission characteristics are studied based on linear thermoacoustic theory. Computational and experimental results show that the amplifying ability of an acoustic amplifier is mainly determined by its geometry parameters and output resistance impedance. The amplifying ability of an acoustic amplifier with appropriate length and diameter reaches its maximum when the output resistance impedance is infinite. It is also shown that the acoustic amplifier consumes an amount of acoustic power when amplifying pressure amplitude and the acoustic power consumption increases with amplifying ratio. Furthermore, a novel cascade acoustic amplifier is proposed, which has a much stronger amplifying ability with reduced acoustic power consumption. In experiments, a two-stage cascade acoustic amplifier amplifies the pressure ratio from 1.177 to 1.62 and produces a pressure amplitude of 0.547 MPa with nitrogen of 2.20 MPa as working gas. Good agreements are obtained between the theoretical analysis and experimental results. This research is instructive for comprehensively understanding the mechanism and making full use of the acoustic amplifier

A low power and low distortion rail-to-rail input/output amplifier using constant current technique

International Nuclear Information System (INIS)

Liu Yan; Zhao Yiqiang; Zhang Shilin; Zhao Hongliang

2011-01-01

A rail-to-rail amplifier with constant transconductance, intended for audio processing, is presented. The constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion region. MOSFETs working in the weak inversion region have the advantages of low power and low distortion. The proposed rail-to-rail amplifier, fabricated in a standard 0.35 μm CMOS process, occupies a core die area of 75 x 183 μm 2 . Measured results show that the maximum power consumption is 85.37 μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2% at 2 kHz. (semiconductor integrated circuits)

Efficiency Enhancement of an Envelope Tracking Power Amplifier Combining Supply Shaping and Dynamic Biasing

DEFF Research Database (Denmark)

Tafuri, Felice Francesco; Sira, Daniel; Jensen, Ole Kiel

2013-01-01

This paper presents a new method to improve the performance of envelope tracking (ET) power amplifiers (PAs). The method consists of combining the supply modulation that characterizes the envelope tracking architecture with supply shaping and dynamic biasing. The inclusion of dynamic biasing allo...

Portable musical instrument amplifier

Science.gov (United States)

Christian, David E.

1990-07-24

The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

Single conversion stage amplifier - SICAM

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.

2005-12-15

This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

Affinity monolith chromatography: A review of principles and recent analytical applications

Science.gov (United States)

Pfaunmiller, Erika L.; Paulemond, Marie Laura; Dupper, Courtney M.; Hage, David S.

2012-01-01

Affinity monolith chromatography (AMC) is a type of liquid chromatography that uses a monolithic support and a biologically-related binding agent as a stationary phase. AMC is a powerful method for the selective separation, analysis or studies of specific target compounds in a sample. This review discusses the basic principles of AMC and recent developments or applications of this method, with particular emphasis being given to work that has appeared in the last five years. Various materials that have been used to prepare columns for AMC are examined, including organic monoliths, silica monoliths, agarose monoliths and cryogels. These supports have been used in AMC for formats that have ranged from traditional columns to disks, microcolumns and capillaries. Many binding agents have also been employed in AMC, such as antibodies, enzymes, proteins, lectins, immobilized metal-ions and dyes. Some applications that have been reported with these binding agents in AMC are bioaffinity chromatography, immunoaffinity chromatography or immunoextraction, immobilized metal-ion affinity chromatography, dye-ligand affinity chromatography, chiral separations and biointeraction studies. Examples are presented from fields that include analytical chemistry, pharmaceutical analysis, clinical testing and biotechnology. Current trends and possible future directions in AMC are also discussed. PMID:23187827

Design of the 150 kW, 46-62 MHz power amplifier for the TRIUMF KAON factory booster ring

International Nuclear Information System (INIS)

Kwiatkowski, S.; Enegren, T.; Poirier, R.L.

1988-06-01

The rf amplifiers for the KAON Factory booster ring must be capable of reactively compensating (detuning) for the injected/extracted beam load as well as providing the beam power and the cavity losses. In order to insure the stability of the rf system under heavy transient and steady state beam loading conditions it is necessary to equip the power amplifiers with fast rf feedback with sufficient gain and bandwidth to reduce the apparent Q of the rf amplifier system as seen by the beam and the other feedback loops. The maximum gain and bandwidth of such a feedback loop is limited by the propagation delay around the feedback path. To minimize the propagation delay a 2.4 kW two stage solid state driver will be used to drive the cathode of the Eimac Y567B tetrode to give an overall propagation delay less than 30 nS. The design features of the rf amplifier to meet the above conditions will be described and test results reported. (Author) (7 refs., 7 figs.)

Gain measurement in a CW medium-power diode pumped Nd:YAG laser amplifier by ASE analysis

International Nuclear Information System (INIS)

Razzaghi, D; Hajiesmaeilbaigi, F; Ruzbehani, M

2014-01-01

Using the relation between amplified spontaneous emission intensity and gain, a set of formulas is derived for gain evaluation by comparing fluorescence yield in two different lengths of the active medium. Experimental measurements are carried out and gain is calculated by solving the derived formula. For comparison, measurements are also carried out using the probe beam method, which shows good agreement between the two methods in a typical CW medium-power diode pumped Nd:YAG amplifier. (paper)

F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

Cathode-follower power amplifier

International Nuclear Information System (INIS)

Giordano, S.; Puglisi, M.

1983-01-01

In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

Science.gov (United States)

Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

2018-04-01

The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

International Nuclear Information System (INIS)

Vladimir Popov

2003-01-01

A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

Recent progress in low-temperature-process monolithic three dimension technology

Science.gov (United States)

Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Shen, Chang-Hong; Shieh, Jia-Min; Yeh, Wen-Kuan; Wu, Meng-Chyi

2018-04-01

Monolithic three-dimension (3D) integration is an ultimate alternative method of fabricating high density, high performance, and multi-functional integrated circuits. It offers the promise of being a new approach to increase system performance. How to manage the thermal impact of multi-tiered processes, such as dopant activation, source/drain silicidation, and channel formation, and to prevent the degradation of pre-existing devices/circuits become key challenges. In this paper, we provide updates on several important monolithic 3D works, particularly in sequentially stackable channels, and our recent achievements in monolithic 3D integrated circuit (3D-IC). These results indicate that the advanced 3D architecture with novel design tools enables ultrahigh-density stackable circuits to have superior performance and low power consumption for future artificial intelligence (AI) and internet of things (IoTs) application.

High pumping-power fiber combiner for double-cladding fiber lasers and amplifiers

Science.gov (United States)

Zheng, Jinkun; Zhao, Wei; Zhao, Baoyin; Li, Zhe; Chang, Chang; Li, Gang; Gao, Qi; Ju, Pei; Gao, Wei; She, Shengfei; Wu, Peng; Hou, Chaoqi; Li, Weinan

2018-03-01

A high pumping-power fiber combiner for backward pumping configurations is fabricated and demonstrated by manufacturing process refinement. The pump power handling capability of every pump fiber can extend to 600 W, corresponding to the average pump coupling efficiency of 94.83%. Totally, 2.67-kW output power with the beam quality factor M2 of 1.41 was obtained, using this combiner in the fiber amplifier experimental setup. In addition, the temperature of the splicing region was less than 50.0°C in the designed combiner under the action of circulating cooling water. The experimental results prove that the designed combiner is a promising integrated all-fiber device for multikilowatt continuous-wave fiber laser with excellent beam quality.

47 CFR 97.315 - Certification of external RF power amplifiers.

Science.gov (United States)

2010-10-01

.... (2) The amplifier was manufactured before April 28, 1978, and has been issued a marketing waiver by... that operator's station. (3) The amplifier is sold to an amateur radio operator or to a dealer, the amplifier is purchased in used condition by a dealer, or the amplifier is sold to an amateur radio operator...

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Erbert, G.; Sumpf, B.

2010-01-01

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

Development of a bi-functional silica monolith for electro-osmotic pumping and DNA clean-up/extraction using gel-supported reagents in a microfluidic device.

Science.gov (United States)

Oakley, Jennifer A; Shaw, Kirsty J; Docker, Peter T; Dyer, Charlotte E; Greenman, John; Greenway, Gillian M; Haswell, Stephen J

2009-06-07

A silica monolith used to support both electro-osmotic pumping (EOP) and the extraction/elution of DNA coupled with gel-supported reagents is described. The benefits of the combined EOP extraction/elution system were illustrated by combining DNA extraction and gene amplification using the polymerase chain reaction (PCR) process. All the reagents necessary for both processes were supported within pre-loaded gels that allow the reagents to be stored at 4 degrees C for up to four weeks in the microfluidic device. When carrying out an analysis the crude sample only needed to be hydrodynamically introduced into the device which was connected to an external computer controlled power supply via platinum wire electrodes. DNA was extracted with 65% efficiency after loading lysed cells onto a silica monolith. Ethanol contained within an agarose gel matrix was then used to wash unwanted debris away from the sample by EOP (100 V cm(-1) for 5 min). The retained DNA was subsequently eluted from the monolith by water contained in a second agarose gel, again by EOP using an electric field of 100 V cm(-1) for 5 min, and transferred into the PCR reagent containing gel. The eluted DNA in solution was successfully amplified by PCR, confirming that the concept of a complete self-contained microfluidic device could be realised for DNA sample clean up and amplification, using a simple pumping and on-chip reagent storage methodology.

SiGe HBTs Optimization for Wireless Power Amplifier Applications

Directory of Open Access Journals (Sweden)

Pierre-Marie Mans

2010-01-01

Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent

2017-10-09

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

2017-01-01

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Class D audio amplifiers for high voltage capacitive transducers

DEFF Research Database (Denmark)

Nielsen, Dennis

of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice......Audio reproduction systems contains two key components, the amplifier and the loudspeaker. In the last 20 – 30 years the technology of audio amplifiers have performed a fundamental shift of paradigm. Class D audio amplifiers have replaced the linear amplifiers, suffering from the well-known issues...... with the low level of acoustical output power and complex amplifier requirements, have limited the commercial success of the technology. Horn or compression drivers are typically favoured, when high acoustic output power is required, this is however at the expense of significant distortion combined...

LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs

Directory of Open Access Journals (Sweden)

Tingyou Lin

2017-06-01

Full Text Available This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs. An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM methodology is developed to balance the channel temperature based on the quantization. The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET bank to reduce its power dissipation and heat generation. A test chip with eight parallel MOSFET banks is fabricated in TSMC 0.25 μm HV BCD processes, and total area is 900 × 914 μm2. The maximal temperature variation among the eight banks can reduce to 2.8 °C by the proposed thermal balancing system from 9.5 °C with 1.5 W dissipation. As a result, our proposed system improves the lifetime of a power MOSFET by 20%.

High efficiency fourth-harmonic generation from nanosecond fiber master oscillator power amplifier

Science.gov (United States)

Mu, Xiaodong; Steinvurzel, Paul; Rose, Todd S.; Lotshaw, William T.; Beck, Steven M.; Clemmons, James H.

2016-03-01

We demonstrate high power, deep ultraviolet (DUV) conversion to 266 nm through frequency quadrupling of a nanosecond pulse width 1064 nm fiber master oscillator power amplifier (MOPA). The MOPA system uses an Yb-doped double-clad polarization-maintaining large mode area tapered fiber as the final gain stage to generate 0.5-mJ, 10 W, 1.7- ns single mode pulses at a repetition rate of 20 kHz with measured spectral bandwidth of 10.6 GHz (40 pm), and beam qualities of Mx 2=1.07 and My 2=1.03, respectively. Using LBO and BBO crystals for the second-harmonic generation (SHG) and fourth-harmonic generation (FHG), we have achieved 375 μJ (7.5 W) and 92.5 μJ (1.85 W) at wavelengths of 532 nm and 266 nm, respectively. To the best of our knowledge these are the highest narrowband infrared, green and UV pulse energies obtained to date from a fully spliced fiber amplifier. We also demonstrate high efficiency SHG and FHG with walk-off compensated (WOC) crystal pairs and tightly focused pump beam. An SHG efficiency of 75%, FHG efficiency of 47%, and an overall efficiency of 35% from 1064 nm to 266 nm are obtained.

Advanced digital modulation: Communication techniques and monolithic GaAs technology

Science.gov (United States)

Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

1983-01-01

Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

Power neodymium-glass amplifier of a repetitively pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I [Russian Federal Nuclear Center ' All-Russian Research Institute of Experimental Physics' , Sarov, Nizhnii Novgorod region (Russian Federation)

2011-11-30

A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 Multiplication-Sign 25 mm and a {approx}40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 {mu}s. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass {approx}3.2, the linear gain {approx}0.031 cm{sup -1} with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm{sup -3}. The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4{lambda} ({lambda} = 0.63 {mu}m is the probing radiation wavelength).

Power neodymium-glass amplifier of a repetitively pulsed laser

International Nuclear Information System (INIS)

Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I

2011-01-01

A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 × 25 mm and a ∼40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 μs. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass ∼3.2, the linear gain ∼0.031 cm -1 with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm -3 . The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4λ (λ = 0.63 μm is the probing radiation wavelength).

An audio FIR-DAC in a BCD process for high power Class-D amplifiers

NARCIS (Netherlands)

Doorn, T.S.; van Tuijl, Adrianus Johannes Maria; Schinkel, Daniel; Annema, Anne J.; Berkhout, M.; Berkhout, M.; Nauta, Bram

A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant

A Front End for Multipetawatt Lasers Based on a High-Energy, High-Average-Power Optical Parametric Chirped-Pulse Amplifier

International Nuclear Information System (INIS)

Bagnoud, V.

2004-01-01

We report on a high-energy, high-average-power optical parametric chirped-pulse amplifier developed as the front end for the OMEGA EP laser. The amplifier provides a gain larger than 109 in two stages leading to a total energy of 400 mJ with a pump-to-signal conversion efficiency higher than 25%

Development and energization of IOT based RF amplifier

International Nuclear Information System (INIS)

Mandal, A.; Som, S.; Raj, P.R.; Manna, S.K.; Ghosh, S.; Seth, S.; Thakurta, S.; Thakur, S.K.; Saha, S.; Panda, U.S.

2013-01-01

A 704 MHz IOT based CW RF amplifier has been developed in VECC. It can also be used with proper tuning to power cavity modules operating at 650 MHz in high energy high intensity proton linear accelerator proposed to be built for ADSS/SNS programme in India and Project-X at Fermilab, USA. This IOT based amplifier provides up to 60 kW continuous wave RF power at 700 MHz. It required various power supplies, LCW cooling and forced air cooling for its operation. The auxiliary power supplies like Grid, Filament and Ion-pump, are floated and mounted on an isolated frame, i.e., HV deck. The mains inputs are electrically isolated by means of isolation transformer. Also, a Programmable Logic Controller (PLC) based interlocks along with high voltage collector power supply has been designed and developed for the safe operation of the RF amplifier. This paper discusses about various developments and energization of the IOT based RF amplifier with high power dummy load. (author)

High Power Amplifiers Chain nonlinearity influence on the accelerating beam stability in free electron laser (FLASH)

CERN Document Server

Cichalewski, w

2010-01-01

The high power amplifiers transfer characteristics nonlinearities can have a negative influence on the overall system performance. This is also true for the TESLA superconducting cavities accelerating field parameters control systems. This Low Level Radio Frequency control systems uses microwave high power amplifiers (like 10 MW klystrons) as actuators in the mentioned feedback loops. The amplitude compression and phase deviations phenomena introduced to the control signals can reduce the feedback performance and cause electron beam energy instabilities. The transfer characteristics deviations in the Free Electron Laser in Hamburg experiment have been investigated. The outcome of this study together with the description of the developed linearization method based on the digital predistortion approach have been described in this paper. Additionally, the results from the linearization tool performance tests in the FLASH's RF systems have been placed.

Cladding-pumped 70-kW-peak-power 2-ns-pulse Er-doped fiber amplifier

Science.gov (United States)

Khudyakov, M. M.; Bubnov, M. M.; Senatorov, A. K.; Lipatov, D. S.; Guryanov, A. N.; Rybaltovsky, A. A.; Butov, O. V.; Kotov, L. V.; Likhachev, M. E.

2018-02-01

An all-fiber pulsed erbium laser with pulse width of 2.4 ns working in a MOPA configuration has been created. Cladding pumped double clad erbium doped large mode area fiber was used in the final stage amplifier. Peculiarity of the current work is utilization of custom-made multimode diode wavelength stabilized at 981+/-0.5 nm - wavelength of maximum absorption by Er ions. It allowed us to shorten Er-doped fiber down to 1.7 m and keep a reasonably high pump-to signal conversion efficiency of 8.4%. The record output peak power for all-fiber amplifiers of 84 kW was achieved within 1555.9+/-0.15 nm spectral range.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Science.gov (United States)

Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

2012-08-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

Energy Technology Data Exchange (ETDEWEB)

Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2012-08-15

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

International Nuclear Information System (INIS)

Bai Xianchen; Yang Jianhua; Zhang Jiande

2012-01-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Silicon monolithic microchannel-cooled laser diode array

International Nuclear Information System (INIS)

Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

2000-01-01

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

International Nuclear Information System (INIS)

Ren Zhixiong; Zhang Kefeng; Liu Lanqi; Li Cong; Chen Xiaofei; Liu Dongsheng; Liu Zhenglin; Zou Xuecheng

2015-01-01

Three linear CMOS power amplifiers (PAs) with high output power (more than watt-level output power) for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer (PCT) and one 1.95 GHz PA using an on-chip series combining transformer (SCT) to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors (MGTR) and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE. (paper)

A monolithic integrated photonic microwave filter

Science.gov (United States)

Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

2017-02-01

Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

Lower-power, high-linearity class-AB current-mode programmable gain amplifier

International Nuclear Information System (INIS)

Wu Yiqiang; Wang Zhigong; Wang Junliang; Ma Li; Xu Jian; Tang Lu

2014-01-01

A novel class-AB implementation of a current-mode programmable gain amplifier (CPGA) including a current-mode DC offset cancellation loop is presented. The proposed CPGA is based on a current amplifier and provides a current gain in a range of 40 dB with a 1 dB step. The CPGA is characterized by a wide range of current gain variation, a lower power dissipation, and a small chip size. The proposed circuit is fabricated using a 0.18 μm CMOS technology. The CPGA draws a current of less than 2.52 mA from a 1.8 V supply while occupying an active area of 0.099 μm 2 . The measured results show an overall gain variation from 10 to 50 dB with a gain error of less than 0.40 dB. The OP 1dB varies from 11.80 to 13.71 dBm, and the 3 dB bandwidth varies from 22.2 to 34.7 MHz over the whole gain range. (semiconductor integrated circuits)

500 MW peak power degenerated optical parametric amplifier delivering 52 fs pulses at 97 kHz repetition rate.

Science.gov (United States)

Rothhardt, J; Hädrich, S; Röser, F; Limpert, J; Tünnermann, A

2008-06-09

We present a high peak power degenerated parametric amplifier operating at 1030 nm and 97 kHz repetition rate. Pulses of a state-of-the art fiber chirped-pulse amplification (FCPA) system with 840 fs pulse duration and 410 microJ pulse energy are used as pump and seed source for a two stage optical parametric amplifier. Additional spectral broadening of the seed signal in a photonic crystal fiber creates enough bandwidth for ultrashort pulse generation. Subsequent amplification of the broadband seed signal in two 1 mm BBO crystals results in 41 microJ output pulse energy. Compression in a SF 11 prism compressor yields 37 microJ pulses as short as 52 fs. Thus, pulse shortening of more than one order of magnitude is achieved. Further scaling in terms of average power and pulse energy seems possible and will be discussed, since both concepts involved, the fiber laser and the parametric amplifier have the reputation to be immune against thermo-optical effects.

Fibrous monolithic ceramics

International Nuclear Information System (INIS)

Kovar, D.; King, B.H.; Trice, R.W.; Halloran, J.W.

1997-01-01

Fibrous monolithic ceramics are an example of a laminate in which a controlled, three-dimensional structure has been introduced on a submillimeter scale. This unique structure allows this all-ceramic material to fail in a nonbrittle manner. Materials have been fabricated and tested with a variety of architectures. The influence on mechanical properties at room temperature and at high temperature of the structure of the constituent phases and the architecture in which they are arranged are discussed. The elastic properties of these materials can be effectively predicted using existing models. These models also can be extended to predict the strength of fibrous monoliths with an arbitrary orientation and architecture. However, the mechanisms that govern the energy absorption capacity of fibrous monoliths are unique, and experimental results do not follow existing models. Energy dissipation occurs through two dominant mechanisms--delamination of the weak interphases and then frictional sliding after cracking occurs. The properties of the constituent phases that maximize energy absorption are discussed. In this article, the authors examine the structure of Si 3 N 4 -BN fibrous monoliths from the submillimeter scale of the crack-deflecting cell-cell boundary features to the nanometer scale of the BN cell boundaries

CARM and harmonic gyro-amplifier experiments at 17 GHz

International Nuclear Information System (INIS)

Menninger, W.L.; Danly, B.G.; Alberti, S.; Chen, C.; Rullier, J.L.; Temkin, R.J.

1993-01-01

Cyclotron resonance maser amplifiers are possible sources for applications such as electron cyclotron resonance heating of fusion plasmas and driving high-gradient rf linear accelerators. For accelerator drivers, amplifiers or phase locked-oscillators are required. A 17 GHz cyclotron autoresonance maser (CARM) amplifier experiment and a 17 GHz third harmonic gyro-amplifier experiment are presently underway at the MIT Plasma Fusion Center. Using the SRL/MIT SNOMAD II introduction accelerator to provide a 380 kV, 180 A, 30 ns flat top electron beam, the gyro-amplifier experiment has produced 5 MW of rf power with over 50 dB of gain at 17 GHz. The gyro-amplifier operates in the TE 31 mode using a third harmonic interaction. Because of its high power output, the gyro-amplifier will be used as the rf source for a photocathode rf electron gun experiment also taking place at MIT. Preliminary gyro-amplifier results are presented, including measurement of rf power, gain versus interaction length, and the far-field pattern. A CARM experiment designed to operate in the TE 11 mode is also discussed

Stimulated Brillouin scattering threshold in fiber amplifiers

International Nuclear Information System (INIS)

Liang Liping; Chang Liping

2011-01-01

Based on the wave coupling theory and the evolution model of the critical pump power (or Brillouin threshold) for stimulated Brillouin scattering (SBS) in double-clad fiber amplifiers, the influence of signal bandwidth, fiber-core diameter and amplifier gain on SBS threshold is simulated theoretically. And experimental measurements of SBS are presented in ytterbium-doped double-clad fiber amplifiers with single-frequency hundred nanosecond pulse amplification. Under different input signal pulses, the forward amplified pulse distortion is observed when the pulse energy is up to 660 nJ and the peak power is up to 3.3 W in the pulse amplification with pulse duration of 200 ns and repetition rate of 1 Hz. And the backward SBS narrow pulse appears. The pulse peak power equals to SBS threshold. Good agreement is shown between the modeled and experimental data. (authors)

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

High SBS-Threshold Er/Yb Co-Doped Phosphate Glass Fiber Amplifiers for High Power, Sub-us Pulsed, Narrow Linewidth, All Fiber-Based Laser Transmitter, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In Phase I, NP Photonics has achieved 1.2 kW peak power for 105 ns fiber laser pulses, and successfully demonstrated the feasibility to produce monolithic high SBS...

SiC MOSFET Switching Power Amplifier Project Summary

Science.gov (United States)

Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

2017-10-01

Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

Energy Technology Data Exchange (ETDEWEB)

Gao Tongqiang [Department of Electronics, Tsinghua University, Beijing 100084 (China); Zhang Chun; Chi Baoyong; Wang Zhihua, E-mail: gtq03@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

2009-06-01

To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-mum CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

International Nuclear Information System (INIS)

Gao Tongqiang; Zhang Chun; Chi Baoyong; Wang Zhihua

2009-01-01

To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

Monolithic blue LED series arrays for high-voltage AC operation

Energy Technology Data Exchange (ETDEWEB)

Ao, Jin-Ping [Satellite Venture Business Laboratory, University of Tokushima, Tokushima 770-8506 (Japan); Sato, Hisao; Mizobuchi, Takashi; Morioka, Kenji; Kawano, Shunsuke; Muramoto, Yoshihiko; Sato, Daisuke; Sakai, Shiro [Nitride Semiconductor Co. Ltd., Naruto, Tokushima 771-0360 (Japan); Lee, Young-Bae; Ohno, Yasuo [Department of Electrical and Electronic Engineering, University of Tokushima, Tokushima 770-8506 (Japan)

2002-12-16

Design and fabrication of monolithic blue LED series arrays that can be operated under high ac voltage are described. Several LEDs, such as 3, 7, and 20, are connected in series and in parallel to meet ac operation. The chip size of a single device is 150 {mu}m x 120 {mu}m and the total size is 1.1 mm x 1 mm for a 40(20+20) LED array. Deep dry etching was performed as device isolation. Two-layer interconnection and air bridge are utilized to connect the devices in an array. The monolithic series array exhibit the expected operation function under dc and ac bias. The output power and forward voltage are almost proportional to LED numbers connected in series. On-wafer measurement shows that the output power is 40 mW for 40(20+20) LED array under ac 72 V. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

2015-01-01

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

Design of a power amplifier for wireless communications using microstrip technology and Microwave Office

Directory of Open Access Journals (Sweden)

Christian Tipantuña

2015-12-01

Full Text Available This paper provides a detailed description and all the procedures involved in designing a power amplifier using microstrip technology and the design software Microwave OfficeTM. Specifically, the design is oriented to build an amplifier with central frequency at 14 GHz, but the same fundamentals and principles could be applied in the whole range of radio frequency. For the design, a MESFET transistor and simultaneous input and output matching networks are considered. The values of the parameters and the simulation for every stage are computed and performed using AWR Microwave OfficeTM. At the end of the document, a fully functional circuit layout represented in 2D and 3D is shown with all their complementary elements

Compact solid state radio frequency amplifiers in kW regime for ...

Indian Academy of Sciences (India)

RF amplifier; solid state amplifier; power combiner and divider; .... was designed using planar and coaxial transmission line baluns with minimum lumped variable ..... Cripps S C 1999 RF power amplifiers for wireless communication. Norwood: ...

Fabrication of Monolithic Dye-Sensitized Solar Cell Using Ionic Liquid Electrolyte

Directory of Open Access Journals (Sweden)

Seigo Ito

2012-01-01

Full Text Available To improve the durability of dye-sensitized solar cells (DSCs, monolithic DSCs with ionic liquid electrolyte were studied. Deposited by screen printing, a carbon layer was successfully fabricated that did not crack or peel when annealing was employed beforehand. Optimized electrodes exhibited photovoltaic characteristics of 0.608 V open-circuit voltage, 6.90 cm−2 mA short-circuit current, and 0.491 fill factor, yielding 2.06% power conversion efficiency. The monolithic DSC using ionic liquid electrolyte was thermally durable and operated stably for 1000 h at 80°C.

Monolithic exploding foil initiator

Science.gov (United States)

Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

2012-10-23

A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

OpenAIRE

Mitrevski, Dragan

2011-01-01

In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

Cascade Structure of Digital Predistorter for Power Amplifier Linearization

Directory of Open Access Journals (Sweden)

E. B. Solovyeva

2015-12-01

Full Text Available In this paper, a cascade structure of nonlinear digital predistorter (DPD synthesized by the direct learning adaptive algorithm is represented. DPD is used for linearization of power amplifier (PA characteristic, namely for compensation of PA nonlinear distortion. Blocks of the cascade DPD are described by different models: the functional link artificial neural network (FLANN, the polynomial perceptron network (PPN and the radially pruned Volterra model (RPVM. At synthesis of the cascade DPD there is possibility to overcome the ill conditionality problem due to reducing the dimension of DPD nonlinear operator approximation. Results of compensating nonlinear distortion in Wiener–Hammerstein model of PA at the GSM–signal with four carriers are shown. The highest accuracy of PA linearization is produced by the cascade DPD containing PPN and RPVM.

Development of 650 MHz solid state RF amplifier for proton accelerator

International Nuclear Information System (INIS)

Jain, Akhilesh; Sharma, Deepak; Gupta, Alok; Tiwari, Ashish; Rao, Nageswar; Sekar, Vasanthi; Lad, M.; Hannurkar, P.R.; Gupta, P.D.

2011-01-01

Design and development of 30 kW high powers RF source at 650 MHz, using solid RF state technology, has been initiated at RRCAT. The indigenous technology development efforts will be useful for the proposed high power proton accelerators for SNS/ADS applications. In this 650 MHz amplifier scheme, 30 kW CW RF power will be generated using modular combination of 8 kW amplifier units. Necessary studies were carried out for device selection, choice of amplifier architecture and design of high power combiners and dividers. Presently RF amplifier delivering 250 W at 650 MHz has been fabricated and tested. Towards development of high power RF components, design and engineering prototyping of 16-port power combiner, directional coupler and RF dummy loads has been completed. The basic 8 kW amplifier unit is designed to provide power gain of 50 dB, bandwidth of 20 MHz and spurious response below 30 dB from fundamental signal. Based on the results of circuit simulation studies and engineering prototyping of amplifier module, two RF transistor viz. MRF3450 and MRF 61K were selected as solid state active devices. Impedance matching network in amplifier module is designed using balanced push pull configuration with transmission line BALUN. Due to high circulating current near drain side, metal clad RF capacitors were selected which helps in avoiding hot spot from output transmission path, ensuring continuous operation at rated RF power without damage to RF board. 350 W circulator is used to protect the RF devices from reflected power. Based on the prototype design and measured performance, one of these RF transistors will be selected to be used as workhorse for all amplifier modules. Two amplifier modules are mounted on water cooled copper heat-sink ensuring proper operating temperature for reliable and safe operation of amplifier. Also real time control system and data logger has been developed to provide DAQ and controls in each rack. For power combining and power measurement

External-cavity high-power dual-wavelength tapered amplifier with tunable THz frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W is achie......A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W...... is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. The beam quality factor M2 is 1.22±0.15 at an output...

Continuous terahertz-wave generation using a monolithically integrated horn antenna

Science.gov (United States)

Peytavit, E.; Beck, A.; Akalin, T.; Lampin, J.-F.; Hindle, F.; Yang, C.; Mouret, G.

2008-09-01

A transverse electromagnetic horn antenna is monolithically integrated with a standard ultrafast interdigitated electrode photodetector on low-temperature-grown GaAs. Continuous-wave terahertz radiation is generated at frequencies up to 2 THz with a maximum power of approximately 1 μW at 780 GHz. Experimental variations in the terahertz power as function of the frequency are explained by means of electromagnetic simulations of the antenna and the photomixer vicinity.

Final amplifier design and mercury

International Nuclear Information System (INIS)

Rose, E.A.; Hanson, D.E.

1991-01-01

The final amplifier for the Mercury KrF excimer facility is being designed. The design exercise involves extensive modeling to predict amplifier performance. Models of the pulsed-power system, including a Child-Langmuir diode with closure, electron-beam energy deposition, KrF laser kinetics, amplified spontaneous emission (ASE), a time-dependent laser extraction in the presence of ASE are presented as a design package. The design exercise indicates that the energy objective of Phase I -- 100 joules -- will be met

Model of pulse extraction from a copper laser amplifier

International Nuclear Information System (INIS)

Boley, C.D.; Warner, B.E.

1997-03-01

A computational model of pulse propagation through a copper laser amplifier has been developed. The model contains a system of 1-D (in the axial direction), time-dependent equations for the laser intensity and amplified spontaneous emission (ASE), coupled to rate equations for the atomic levels. Detailed calculations are presented for a high-power amplifier at Lawrence Livermore National Laboratory. The extracted power agrees with experiment near saturation. At lower input power the calculation overestimates experiment, probably because of increased ASE effects. 6 refs., 6 figs

94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology

NARCIS (Netherlands)

Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T.

2012-01-01

Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications

Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

KAUST Repository

Benkhelifa, Fatma; Alouini, Mohamed-Slim

2016-01-01

In this paper, we investigate the simultaneous wireless information and power transfer (SWIPT) for the two-hop Multiple-Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with the multiantenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the sourcedestination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) which separate the EH and ID transfer over the power domain and the time domain, respectively.

Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

International Nuclear Information System (INIS)

Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

2010-01-01

The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

KAUST Repository

Benkhelifa, Fatma

2016-01-06

In this paper, we investigate the simultaneous wireless information and power transfer (SWIPT) for the two-hop Multiple-Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with the multiantenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the sourcedestination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) which separate the EH and ID transfer over the power domain and the time domain, respectively.

Bandwidth tunable amplifier for recording biopotential signals.

Science.gov (United States)

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

CMOS monolithic active pixel sensors for high energy physics

Energy Technology Data Exchange (ETDEWEB)

Snoeys, W., E-mail: walter.snoeys@cern.ch

2014-11-21

Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon are only now starting to make their way into high energy physics. Two major requirements are radiation tolerance and low power consumption. For the most extreme radiation levels, signal charge has to be collected by drift from a depletion layer onto a designated collection electrode without losing the signal charge elsewhere in the in-pixel circuit. Low power consumption requires an optimization of Q/C, the ratio of the collected signal charge over the input capacitance [1]. Some solutions to combine sufficient Q/C and collection by drift require exotic fabrication steps. More conventional solutions up to now require a simple in-pixel readout circuit. Both high voltage CMOS technologies and Monolithic Active Pixel Sensors (MAPS) technologies with high resistivity epitaxial layers offer high voltage diodes. The choice between the two is not fundamental but more a question of how much depletion can be reached and also of availability and cost. This paper tries to give an overview.

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar

2012-06-01

In this report, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR.

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar

2012-09-16

In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR. © 2012 IEEE.

Influence of core NA on thermal-induced mode instabilities in high power fiber amplifiers

International Nuclear Information System (INIS)

Tao, Rumao; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin

2015-01-01

We report on the influence of core NA on thermal-induced mode instabilities (MI) in high power fiber amplifiers. The influence of core NA and the V-parameter on MI has been investigated numerically. It shows that core NA has a larger influence on MI for fibers with a smaller core-cladding-ratio, and the influence of core NA on the threshold is more obvious when the amplifiers are pumped at 915 nm. The dependence of the threshold on the V-parameter revealed that the threshold increases linearly as the V-parameter decreases when the V-parameter is larger than 3.5, and the threshold shows an exponential increase as the V-parameter decreases when the V-parameter is less than 3.5. We also discussed the effect of linewidth on MI, which indicates that the influence of linewidth can be neglected for a linewidth smaller than 1 nm when the fiber core NA is smaller than 0.07 and the fiber length is shorter than 20 m. Fiber amplifiers with different core NA were experimentally analyzed, which agreed with the theoretical predictions. (letter)

High-gain (43 dB), high-power (40 W), highly efficient multipass amplifier at 995 nm in Yb:LiYF4

Science.gov (United States)

Manni, Jeffrey; Harris, Dennis; Fan, Tso Yee

2018-06-01

A simple implementation of a multipass amplifier along with the use of a cryogenic Yb:LiYF4 (YLF) gain medium has enabled the demonstration of a bulk amplifier with an unprecedented combination of large-signal gain (43 dB), efficiency (>50% optical), average output power (40 W) and a near-diffraction-limited output beam.

LePIX: First results from a novel monolithic pixel sensor

International Nuclear Information System (INIS)

Mattiazzo, S.; Battaglia, M.; Bisello, D.; Caselle, M.; Chalmet, P.; Demaria, N.; Giubilato, P.; Ikemoto, Y.; Kloukinas, K.; Mansuy, C.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Silvestrin, L.; Snoeys, W.; Wyss, J.

2013-01-01

We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This maintains the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, but offers charge collection by drift from a depleted region and therefore an excellent signal to noise ratio and a radiation tolerance superior to conventional undepleted MAPS. Measurement results obtained with the first prototypes from laser, radioactive source and beam test experiments are described. The excellent signal-to-noise performance is demonstrated by the capability of the device to separate the peaks in the spectrum of a 55 Fe source. We will also highlight the interaction between pixel cell design and architecture which points toward a very precise direction in the development of such depleted monolithic pixel devices for high energy physics

The multichannel amplifier/discriminator CMOS ASIC for visual light photon counters

International Nuclear Information System (INIS)

Baturitsky, M.A.; Yurenya, Yu.P.Yu.P.

2002-01-01

The 18-channel CMOS custom monolithic amplifier/discriminator ASIC was designed as a front-end electronics chip for Visual Light Photon Counters which convert photons from scintillation fibre/strip detectors to electrical signals. One ASICs channel contains a charge-sensitive preamplifier, a discriminator to mark the arrival time of signals, and a charge divider to provide analog outputs for analog-to-digital conversion being performed by SVX2. The ASIC is proposed as one of the variants for possible future front-end electronics upgrading the D0 Central Fibre Tracker, Central and Forward Pre-Showers (Fermilab, Batavia, USA)

Control interlock and monitoring system for 80 KW IOT based RF power amplifier system at 505.812 MHz for Indus-2

International Nuclear Information System (INIS)

Kumar, Gautam; Deo, R.K.; Jain, M.K.; Bagre, Sunil; Hannurkar, P.R.

2013-01-01

For 80 kW inductive output tube (IOT) based RF power amplifier system at 505.812 MHz for Indus-2, a control, interlock and monitoring system is realized. This is to facilitate proper start-up and shutdown of the amplifier system, monitor various parameters to detect any malfunction during its operation and to bring the system in a safe stage, thereby assuring reliable operation of the amplifier system. This high power amplifier system incorporates interlocks such as cooling interlocks, various voltage and current interlocks and time critical RF interlocks. Processing of operation sequence, cooling interlocks and various voltage and current interlocks have been realized by using Siemens make S7-CPU-315-2DP (CPU) based programmable logic controller (PLC) system. While time critical or fast interlocks have been realized by using Siemens make FPGA based Boolean Co-processor FM-352-5 which operates in standalone mode. Siemens make operating panel OP277 6'' is being used as a human machine interface (HMI) device for command, data, alarm generation and process parameter monitoring. (author)

SPS RF System Amplifier plant

CERN Multimedia

1977-01-01

The picture shows a 2 MW, 200 MHz amplifier plant with feeder lines. The main RF-system of the SPS comprises four cavities: two of 20 m length and two of 16.5 m length. They are all installed in one long straight section (LSS 3). These cavities are of the travelling-wave type operating at a centre frequency of 200.2 MHz. They are wideband, filling time about 700 ns and untuned. The power amplifiers, using tetrodes are installed in a surface building 200 m from the cavities. Initially only two cavities were installed, a third cavity was installed in 1978 and a forth one in 1979. The number of power amplifiers was also increased: to the first 2 MW plant a second 2 MW plant was added and by end 1979 there were 8 500 kW units combined in pairs to feed each of the 4 cavities with up to about 1 MW RF power, resulting in a total accelerating voltage of about 8 MV. See also 7412016X, 7412017X, 7411048X.

Derivation and Analysis of a Low-Cost, High-performance Analogue BPCM Control Scheme for Class-D Audio Power Amplifiers

OpenAIRE

Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

2005-01-01

This paper presents a low-cost analogue control scheme for class-D audio power amplifiers. The scheme is based around bandpass current-mode (BPCM) control, and provides ample stability margins and low distortion over a wide range of operating conditions. Implementation is very simple and does not require the use of operational amplifiers. Small-signal behavior of the controller is accurately predicted, and design is carried out using standard transfer function based linear control methodology...

Phase noise in RF and microwave amplifiers.

Science.gov (United States)

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

Linearization and efficiency enhancement of power amplifiers using digital predistortion

Energy Technology Data Exchange (ETDEWEB)

Safari, Nima

2008-07-01

Today, demand of higher spectral efficiency forces wireless communication systems to employ non-constant envelope modulation schemes such as Quadrature Amplitude Modulations (QAM), Code Division Multiple Access (CDMA) and Orthogonal Frequency-Division Multiplexing (OFDM) schemes. These modulation techniques generate signals with wide range of envelope fluctuation. This property makes these schemes sensitive to nonlinear amplifications. Nonlinearities introduced by Power Amplifiers (PA) cause both a distortion of the signal and an increased out of band output spectrum, which leads to a rise in adjacent channel interference. Thus, in order to ensure a high spectral efficiency and to avoid spectral regrowth, a linearization technique is required. Among all the linearization techniques, basedband Digital Predistortion (DPD) is one of the commonly used linearization techniques, which is characterized by robust operation, low implementation cost and high accuracy. In the first chapter of this thesis, an introduction on the motivation and necessity of using PA linearization techniques is presented. Digital Predistortion as a popular linearization technique aims to improve the efficiency and linearity of RF power amplifiers. The scope of the thesis, the goals to be achieved and the contributions are also discussed in chapter one. Chapter two, mainly discusses sample-by-sample updating algorithm in Digital Predistorters to adaptively linearize the PA memoryless nonlinearities. Look-up Table (LUT) and polynomial approaches are studied and implemented in Hardware using a test-bed provided by Nera Research. The experimental results together with a discussion are then given. A new DPD algorithm based on block estimation is proposed in chapter three to avoid realtime signal processing, reduce the complexity and also avoid the bad performance during the slow adaptation of adaptive the Adjacent Channel Power Ratio (ACPR) and the Error Vector Magnitude (EVM) requirements. In

Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

Science.gov (United States)

Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

2015-01-01

In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

Monolithic PM Raman fiber laser at 1679 nm for Raman amplification at 1810 nm

DEFF Research Database (Denmark)

Svane, Ask Sebastian; Rottwitt, Karsten

2013-01-01

Stimulated Raman scattering (SRS) has been subject to much attention within the field of fiber lasers and amplifiers as it provides an extended wavelength coverage in comparison to rare-earth based devices. Motivated by the projected capacity crunch [1], different approaches are being explored...... demonstrate a monolithic RM Raman fiber laser (RFL), which acts as a pump for a Raman amplifier (RA) at 1810 nm. The lasing wavelength of a RFL, thus also for a RA, can in principle be designed arbitrarily within the entire wavelength range from the Erbium band up to the Thulium/Holmium band...... of OFS PM Raman fiber, with an estimated propagation loss of 0.42/0.46/1.3 dB/km at 1564/1679/1810 nm. The Raman gain coefficient was measured to be gR=2.66/2.35 W-1km-1 at 1679/1810 nm. The laser curve of the RFL is depicted in Fig. 1b, with a slope efficiency of 67 %. The high slope efficiency...

Design of resonant converter based DC power supply for RF amplifier

International Nuclear Information System (INIS)

Mohan, Kartik; Suthar, Gajendra; Dalicha, Hrushikesh; Agarwal, Rohit; Trivedi, R.G.; Mukherjee, Aparajita

2017-01-01

ITER require 20 MW of RF power to a large variety of plasmas in the Ion Cyclotron frequency range for heating and driving plasma current. Nine RF sources of 2.5MW RF power level each collectively will accomplish the above requirement. Each RF source consists of SSPA, driver and end stage, above which driver and end stage amplifier are tube (Tetrode/Diacrode) based which requires auxiliary DC power source viz. filament, screen grid and control grid DC power supply. DC power supply has some stringent requirements like low stored energy, fast turn off, and low ripple value, etc. This paper will focus only on Zero Current Switching (ZCS) resonant converter based buck converter. This can serve the purpose of control grid and screen grid DC power supply for above requirement. IGBT switch will be used at 20 kHz so as to lower the filter requirement hence low stored energy and ripple in the output voltage. ZCS operation will also assist us in reducing EMI/EMC effect. Design of resonant tank circuit is important aspect of the converter as it forms the backbone of the complete system and basis of selection of other important parameters as well hence mathematical model analysis with the help of circuit equations for various modes have been shown as a part of selection criteria. Peak current through the switch, duty cycle, switching frequency will be the design parameters for selecting resonant tank circuit

Modeling Distortion Effects in Class-D Amplifier Filter Inductors

DEFF Research Database (Denmark)

Knott, Arnold; Stegenborg-Andersen, Tore; Thomsen, Ole Cornelius

2010-01-01

Distortion is generally accepted as a quantifier to judge the quality of audio power amplifiers. In switchmode power amplifiers various mechanisms influence this performance measure. After giving an overview of those, this paper focuses on the particular effect of the nonlinearity of the output f...

M.V.A. amplifier for plasma position control by vertical magnetic field

International Nuclear Information System (INIS)

Schenk, G.

1978-01-01

The radial plasma position in the WEGA torus is controlled by a power amplifier, acting on the vertical magnetic field. Up to now the feedback loop contains, as amplifying elements, two 90 kW DC-transistor amplifiers, acting in push-pull operation. As increased plasma stability and lifetime is desirable, we have to increase the power amplifier to about 1 Megawatt. Industry offered a thyristor rectifier, operating at 50 or 300 Hz, and alternatively a thyristor chopper amplifier at a few kHz frequency response. Theses offers did not correspond to our demand, as far as response time, price and primary power requirements are concerned. We have implemented a bipolar switching-type amplifier (also called H-bridge converter) with the characteristics: time response < 0,05 ms., pulsed power = 1 MW (400 V, 2500 A), primary power = 2,5 kW. As power switch, a network of parallel high voltage transistors, driven by three transistor stages, has been chosen, to control a vertical magnetic field or +/- 180 G, with a precision of about one per cent. Precautions for transistor switches concerning mainly critical voltage, current, instantaneous power and selfoscillating behaviour have been taken. This systems corresponds to our demands

Microfluidic devices and methods including porous polymer monoliths

Science.gov (United States)

Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

2014-04-22

Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

Implantable neurotechnologies: a review of integrated circuit neural amplifiers.

Science.gov (United States)

Ng, Kian Ann; Greenwald, Elliot; Xu, Yong Ping; Thakor, Nitish V

2016-01-01

Neural signal recording is critical in modern day neuroscience research and emerging neural prosthesis programs. Neural recording requires the use of precise, low-noise amplifier systems to acquire and condition the weak neural signals that are transduced through electrode interfaces. Neural amplifiers and amplifier-based systems are available commercially or can be designed in-house and fabricated using integrated circuit (IC) technologies, resulting in very large-scale integration or application-specific integrated circuit solutions. IC-based neural amplifiers are now used to acquire untethered/portable neural recordings, as they meet the requirements of a miniaturized form factor, light weight and low power consumption. Furthermore, such miniaturized and low-power IC neural amplifiers are now being used in emerging implantable neural prosthesis technologies. This review focuses on neural amplifier-based devices and is presented in two interrelated parts. First, neural signal recording is reviewed, and practical challenges are highlighted. Current amplifier designs with increased functionality and performance and without penalties in chip size and power are featured. Second, applications of IC-based neural amplifiers in basic science experiments (e.g., cortical studies using animal models), neural prostheses (e.g., brain/nerve machine interfaces) and treatment of neuronal diseases (e.g., DBS for treatment of epilepsy) are highlighted. The review concludes with future outlooks of this technology and important challenges with regard to neural signal amplification.

Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Energy Technology Data Exchange (ETDEWEB)

Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)

2012-01-01

The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

Pump Side-scattering in Ultra-powerful Backward Raman Amplifiers

International Nuclear Information System (INIS)

Solodov, A.A.; Malkin, V.M.; Fisch, N.J.

2004-01-01

Extremely large laser power might be obtained by compressing laser pulses through backward Raman amplification (BRA) in plasmas. Premature Raman backscattering of a laser pump by plasma noise might be suppressed by an appropriate detuning of the Raman resonance, even as the desired amplification of the seed persists with a high efficiency. In this paper, we analyze side-scattering of laser pumps by plasma noise in backward Raman amplifiers. Though its growth rate is smaller than that of backscattering, the side-scattering can nevertheless be dangerous, because of a longer path of side-scattered pulses in plasmas and because of an angular dependence of the Raman resonance detuning. We show that side-scattering of laser pumps by plasma noise in BRA might be suppressed to a tolerable level at all angles by an appropriate combination of two detuning mechanisms associated with plasma density gradient and pump chirp

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK

Directory of Open Access Journals (Sweden)

Jorge Moreno Rubio

2015-01-01

Full Text Available This paper shows the design and simulation results of a hybrid Doherty power amplifier. The amplifier has been designed at 2,4 GHz, obtaining power-added efficiency above 70 % for 6 dB output power back-off, together with a small signal gain of 17 dB. Design and analysis equations are presented considering class AB bias conditions for the main amplifier and class C for the peak one in back-off larger than 6 dB, and FET device assumption. An additional control on the bias point of the peak device has been carried out, in order to increase the gain on the Doherty region and ease the design of the peak branch. A Cree’s GaN-HEMT CGH40010F device has been used with a nonlinear model guarantied up to 6 GHz and with an expected output power of 10 W. The obtained output power is higher than 25-W. The simulation has been carried out using Agilent ADS CAD tools. The present design could present the state of the art in terms of continuous-wave (CW characterization

A look-up-table digital predistortion technique for high-voltage power amplifiers in ultrasonic applications.

Science.gov (United States)

Gao, Zheng; Gui, Ping

2012-07-01

In this paper, we present a digital predistortion technique to improve the linearity and power efficiency of a high-voltage class-AB power amplifier (PA) for ultrasound transmitters. The system is composed of a digital-to-analog converter (DAC), an analog-to-digital converter (ADC), and a field-programmable gate array (FPGA) in which the digital predistortion (DPD) algorithm is implemented. The DPD algorithm updates the error, which is the difference between the ideal signal and the attenuated distorted output signal, in the look-up table (LUT) memory during each cycle of a sinusoidal signal using the least-mean-square (LMS) algorithm. On the next signal cycle, the error data are used to equalize the signal with negative harmonic components to cancel the amplifier's nonlinear response. The algorithm also includes a linear interpolation method applied to the windowed sinusoidal signals for the B-mode and Doppler modes. The measurement test bench uses an arbitrary function generator as the DAC to generate the input signal, an oscilloscope as the ADC to capture the output waveform, and software to implement the DPD algorithm. The measurement results show that the proposed system is able to reduce the second-order harmonic distortion (HD2) by 20 dB and the third-order harmonic distortion (HD3) by 14.5 dB, while at the same time improving the power efficiency by 18%.

Audio power amplifier techniques with energy efficient power conversion. Vol. 1

Energy Technology Data Exchange (ETDEWEB)

Nielsen, Karsten

1998-04-01

A fundamental study of both analog and digital pulse modulation methods is carried out. A novel class of multi-level pulse modulation methods - Phase Shifted Carrier Pulse Width Modulation (PSCPWM) - is introduced and show to have several advantageous features, primarily caused by the much improved synthesis of the modulating signal. Enhanced digital pulse modulation methods for digital Pulse Modulation Amplifier (PMA) systems are investigated, and a simple methodology for digital PWM modulator synthesis is devised. It is concluded, that the modulator performance is not a limitation in the system, regardless of the domain of modulator implementation. Power conversion in PMA systems is adressed from the perspective of both linearity and efficienty optimization. Based on detailed studies of the distortion mechanisms in the power conversion stage it is concluded, that this is the fundamental limitation on system performance due to several physical limitations. The analysis of general power stage efficiency concludes that dramatic improvements in energy efficiency are possible with PMA systems that are optimized for efficiency. A control system design methodology is devised as a platform for synthesis of robust control systems. Investigations of three fundamental control structures show that even simple control systems offer a remarkable value, although the considered topologies also have their limitations which is verified by practical evaluation in hardware. A novel control method is introduced - Multivariable Enhanced Cascade Control (MECC). MECC provides flexible control over all essential system parameters and is furthermore simple in realization. Practical evaluation of a MECC based PMA shows state-of-the-art performance. The application of non-linear control methods is investigated with the introduction of an enhanced non-linear control/modulator topology. Although the non-linear controller is theoretically interesting, the method proves to suffer from various

A monolithic active pixel sensor for particle detection in 0.25 μm CMOS technology

International Nuclear Information System (INIS)

Velthuis, J.J.; Allport, P.P.; Casse, G.; Evans, A.; Turchetta, R.; Villani, G.

2006-01-01

We are developing CMOS monolithic active pixel sensors (MAPS) for High Energy Physics applications. We have successfully produced 3 test structures. They feature several different pixel types including: standard 3MOS, 4MOS allowing Correlated Double Sampling (CDS), charge amplifier pixels and a flexible APS (FAPS). The FAPS has a 10 deep pipeline on each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Results of a laser test on our first device and source test results on two more recent test structures will be presented

45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner

Institute of Scientific and Technical Information of China (English)

Zhengdong JIANG; Kaizhe GUO; Peng HUANG; Yiming FAN; Chenxi ZHAO; Yongling BAN; Jun LIU; Kai KANG

2017-01-01

In this paper,45 GHz and 60 GHz power amplifiers (PAs) with high output power have been successfully designed by using 90 nm CMOS process.The 45 GHz (60 GHz) PA consists of two (four) differential stages.The sizes of transistors have been designed in an appropriate way so as to trade-off gain,efficiency and stability.Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional Ⅲ-Ⅴ technologies,the technique of power combining has been applied to achieve a high output power.In particular,a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA.The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly.Taking its advantages of this novel transformer based power combiner,our realized 45 GHz (60 GHz) mm-wave PA has achieved the gain of 20.3 dB (16.8 dB),the maximum PAE of 14.5％ (13.4％) and the saturated output power of 21 dBm (21 dBm) with the 1.2 V supply voltage.

High efficiency RF amplifier development over wide dynamic range for accelerator application

Science.gov (United States)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

Progress on the gyrocon deflection-modulated amplifier

International Nuclear Information System (INIS)

Tallerico, P.J.

1982-01-01

The gyrocon is a high-power deflection-modulated amplifier that can have excellent spatial bunching and, hence, high dc-to-rf conversion efficiency. A program to design and build a prototype amplifier at 450 MHz is discussed. Peak powers of 150 kW and conversion efficiencies of 23% have been measured; the testing program is being pursued to improve this performance. Some possible mechanisms for the difference between the experimental and calculated performance are discussed

Cryogenic cooling for high power laser amplifiers

Directory of Open Access Journals (Sweden)

Perin J.P.

2013-11-01

Full Text Available Using DPSSL (Diode Pumped Solid State Lasers as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz. The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K–170 K with a heat flux of 1 MW*m−2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

Impact of Nonlinear Power Amplifier on Link Adaptation Algorithm of OFDM Systems

DEFF Research Database (Denmark)

Das, Suvra S.; Tariq, Faisal; Rahman, Muhammad Imadur

2007-01-01

The impact of non linear distortion due to High Power Amplifier (HPA) on the performance of Link Adaptation (LA) - Orthogonal Frequency Division Multiplexing (OFDM) based wireless system is analyzed. The performance of both Forward Error Control Coding (FEC) en-coded and uncoded system is evaluated....... LA maximizes the throughput while maintaining a required Block Error Rate (BLER). It is found that when OFDM signal, which has high PAPR, suffers non linear distortion due to non ideal HPA, the LA fails to meet the target BLER. Detailed analysis of the distortion and effects on LA are presented...

Single-mode operation of a coiled multimode fiber amplifier

International Nuclear Information System (INIS)

Koplow, Jeffrey P.; Kliner, Dahv A. V.; Goldberg, Lew

2000-01-01

We report a new approach to obtaining single-transverse-mode operation of a multimode fiber amplifier in which the gain fiber is coiled to induce significant bend loss for all but the lowest-order mode. We demonstrated this method by constructing a coiled amplifier using Yb-doped, double-clad fiber with a core diameter of 25 μm and a numerical aperture of ∼0.1 (V≅7.4) . When the amplifier was operated as an amplified-spontaneous-emission source, the output beam had an M 2 value of 1.09±0.09 ; when seeded at 1064 nm, the slope efficiency was similar to that of an uncoiled amplifier. This technique will permit scaling of pulsed fiber lasers and amplifiers to significantly higher pulse energies and peak powers and cw fiber sources to higher average powers while maintaining excellent beam quality. (c) 2000 Optical Society of America

Monolithic spectrometer

Energy Technology Data Exchange (ETDEWEB)

Rajic, Slobodan (Knoxville, TN); Egert, Charles M. (Oak Ridge, TN); Kahl, William K. (Knoxville, TN); Snyder, Jr., William B. (Knoxville, TN); Evans, III, Boyd M. (Oak Ridge, TN); Marlar, Troy A. (Knoxville, TN); Cunningham, Joseph P. (Oak Ridge, TN)

1998-01-01

A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

Object-oriented wavefront correction in an asymmetric amplifying high-power laser system

Science.gov (United States)

Yang, Ying; Yuan, Qiang; Wang, Deen; Zhang, Xin; Dai, Wanjun; Hu, Dongxia; Xue, Qiao; Zhang, Xiaolu; Zhao, Junpu; Zeng, Fa; Wang, Shenzhen; Zhou, Wei; Zhu, Qihua; Zheng, Wanguo

2018-05-01

An object-oriented wavefront control method is proposed aiming for excellent near-field homogenization and far-field distribution in an asymmetric amplifying high-power laser system. By averaging the residual errors of the propagating beam, smaller pinholes could be employed on the spatial filters to improve the beam quality. With this wavefront correction system, the laser performance of the main amplifier system in the Shen Guang-III laser facility has been improved. The residual wavefront aberration at the position of each pinhole is below 2 µm (peak-to-valley). For each pinhole, 95% of the total laser energy is enclosed within a circle whose diameter is no more than six times the diffraction limit. At the output of the main laser system, the near-field modulation and contrast are 1.29% and 7.5%, respectively, and 95% of the 1ω (1053 nm) beam energy is contained within a 39.8 µrad circle (6.81 times the diffraction limit) under a laser fluence of 5.8 J cm-2. The measured 1ω focal spot size and near-field contrast are better than the design values of the Shen Guang-III laser facility.

Modeling and Optimization of Class-E Amplifier at Subnominal Condition in a Wireless Power Transfer System for Biomedical Implants.

Science.gov (United States)

Liu, Hao; Shao, Qi; Fang, Xuelin

2017-02-01

For the class-E amplifier in a wireless power transfer (WPT) system, the design parameters are always determined by the nominal model. However, this model neglects the conduction loss and voltage stress of MOSFET and cannot guarantee the highest efficiency in the WPT system for biomedical implants. To solve this problem, this paper proposes a novel circuit model of the subnominal class-E amplifier. On a WPT platform for capsule endoscope, the proposed model was validated to be effective and the relationship between the amplifier's design parameters and its characteristics was analyzed. At a given duty ratio, the design parameters with the highest efficiency and safe voltage stress are derived and the condition is called 'optimal subnominal condition.' The amplifier's efficiency can reach the highest of 99.3% at the 0.097 duty ratio. Furthermore, at the 0.5 duty ratio, the measured efficiency of the optimal subnominal condition can reach 90.8%, which is 15.2% higher than that of the nominal condition. Then, a WPT experiment with a receiving unit was carried out to validate the feasibility of the optimized amplifier. In general, the design parameters of class-E amplifier in a WPT system for biomedical implants can be determined with the proposed optimization method in this paper.

Dynamic range meter for radiofrequency amplifiers

Directory of Open Access Journals (Sweden)

Drozd S. S.

2009-04-01

Full Text Available The new measurement setup having increased on 20…30 dB the own dynamic range in comparison with the standard circuit of the dynamic range meter is offered and the rated value of an error bringing by setup in the worst case does not exceed ± 2,8 dB. The measurement setup can be applied also to determinate levels of intermodulation components average power amplifiers and powerful amplifiers of a low-frequency at replacement of the quartz filter on meeting low-frequency the LC-filter and the spectrum analyzer.

InP DHBT technology for power amplifiers at mm-wave frequencies

DEFF Research Database (Denmark)

Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

2017-01-01

-finger devices. Ballasted devices are introduced to improve thermal behaviour and to increase the limits of the safe operating area (SOA). The SOA is improved approximately by 75% for 4-finger devices with 0.7×10 μm2 emitter. A fabricated monolithic microwave integrated circuit (MMIC) at E-band based...

Monolithic integration of microfluidic channels and semiconductor lasers

Science.gov (United States)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

GaAs MMIC elements in phased-array antennas

Science.gov (United States)

Leonard, Regis F.

1988-01-01

Over the last six years NASA Lewis Research Center has carried out a program aimed at the development of advanced monolithic microwave integrated circuit technology, principally for use in phased-array antenna applications. Arising out of the Advanced Communications Technology Satellite (ACTS) program, the initial targets of the program were chips which operated at 30 and 20 GHz. Included in this group of activities were monolithic power modules with an output of 2 watts at GHz, variable phase shifters at both 20 and 30 GHz, low noise technology at 30 GHz, and a fully integrated (phase shifter, variable gain amplifier, power amplifier) transmit module at 20 GHz. Subsequent developments are centered on NASA mission requirements, particularly Space Station communications systems and deep space data communications.

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

Science.gov (United States)

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

Activated Carbon Fiber Monoliths as Supercapacitor Electrodes

Directory of Open Access Journals (Sweden)

Gelines Moreno-Fernandez

2017-01-01

Full Text Available Activated carbon fibers (ACF are interesting candidates for electrodes in electrochemical energy storage devices; however, one major drawback for practical application is their low density. In the present work, monoliths were synthesized from two different ACFs, reaching 3 times higher densities than the original ACFs’ apparent densities. The porosity of the monoliths was only slightly decreased with respect to the pristine ACFs, the employed PVDC binder developing additional porosity upon carbonization. The ACF monoliths are essentially microporous and reach BET surface areas of up to 1838 m2 g−1. SEM analysis reveals that the ACFs are well embedded into the monolith structure and that their length was significantly reduced due to the monolith preparation process. The carbonized monoliths were studied as supercapacitor electrodes in two- and three-electrode cells having 2 M H2SO4 as electrolyte. Maximum capacitances of around 200 F g−1 were reached. The results confirm that the capacitance of the bisulfate anions essentially originates from the double layer, while hydronium cations contribute with a mixture of both, double layer capacitance and pseudocapacitance.

Methacrylate monolithic columns functionalized with epinephrine for capillary electrochromatography applications.

Science.gov (United States)

Carrasco-Correa, Enrique Javier; Ramis-Ramos, Guillermo; Herrero-Martínez, José Manuel

2013-07-12

Epinephrine-bonded polymeric monoliths for capillary electrochromatography (CEC) were developed by nucleophilic substitution reaction of epoxide groups of poly(glycidyl-methacrylate-co-ethylenedimethacrylate) (poly(GMA-co-EDMA)) monoliths using epinephrine as nucleophilic reagent. The ring opening reaction under dynamic conditions was optimized. Successful chemical modification of the monolith surface was ascertained by in situ Raman spectroscopy characterization. In addition, the amount of epinephrine groups that was bound to the monolith surface was evaluated by oxidation of the catechol groups with Ce(IV), followed by spectrophotometric measurement of unreacted Ce(IV). About 9% of all theoretical epoxide groups of the parent monolith were bonded to epinephrine. The chromatographic behavior of the epinephrine-bonded monolith in CEC conditions was assessed with test mixtures of alkyl benzenes, aniline derivatives and substituted phenols. In comparison to the poly(GMA-co-EDMA) monoliths, the epinephrine-bonded monoliths exhibited a much higher retention and slight differences in selectivity. The epinephrine-bonded monolith was further modified by oxidation with a Ce(IV) solution and compared with the epinephrine-bonded monoliths. The resulting monolithic stationary phases were evaluated in terms of reproducibility, giving RSD values below 9% in the parameters investigated. Copyright © 2013 Elsevier B.V. All rights reserved.

An Integrated Low-Power Lock-In Amplifier and Its Application to Gas Detection

Directory of Open Access Journals (Sweden)

Paulina M. Maya-Hernández

2014-08-01

Full Text Available This paper presents a new micropower analog lock-in amplifier (LIA suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

Three-Stage InP Submillimeter-Wave MMIC Amplifier

Science.gov (United States)

Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

2008-01-01

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Fibre amplifier based on an ytterbium-doped active tapered fibre for the generation of megawatt peak power ultrashort optical pulses

Energy Technology Data Exchange (ETDEWEB)

Koptev, M Yu; Anashkina, E A; Lipatov, D S; Andrianov, A V; Muravyev, S V; Kim, A V [Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod (Russian Federation); Bobkov, K K; Likhachev, M E; Levchenko, A E; Aleshkina, S S; Semjonov, S L; Denisov, A N; Bubnov, M M [Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation); Laptev, A Yu; Gur' yanov, A N [G.G.Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

2015-05-31

We report a new ytterbium-doped active tapered fibre used in the output amplifier stage of a fibre laser system for the generation of megawatt peak power ultrashort pulses in the microjoule energy range. The tapered fibre is single-mode at its input end (core and cladding diameters of 10 and 80 μm) and multimode at its output end (diameters of 45 and 430 μm), but ultrashort pulses are amplified in a quasi-single-mode regime. Using a hybrid Er/Yb fibre system comprising an erbium master oscillator and amplifier at a wavelength near 1.5 μm, a nonlinear wavelength converter to the 1 μm range and a three-stage ytterbium-doped fibre amplifier, we obtained pulses of 1 μJ energy and 7 ps duration, which were then compressed by a grating-pair dispersion compressor with 60% efficiency to a 130 fs duration, approaching the transform-limited pulse duration. The present experimental data agree well with numerical simulation results for pulse amplification in the threestage amplifier. (extreme light fields and their applications)

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

International Nuclear Information System (INIS)

Wang Hanchao; Huang Lirong; Shi Zhongwei

2011-01-01

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influencedby the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. (semiconductor devices)

Mechanically stable, hierarchically porous Cu3(btc)2 (HKUST-1) monoliths via direct conversion of copper(II) hydroxide-based monoliths.

Science.gov (United States)

Moitra, Nirmalya; Fukumoto, Shotaro; Reboul, Julien; Sumida, Kenji; Zhu, Yang; Nakanishi, Kazuki; Furukawa, Shuhei; Kitagawa, Susumu; Kanamori, Kazuyoshi

2015-02-28

The synthesis of highly crystalline macro-meso-microporous monolithic Cu3(btc)2 (HKUST-1; btc(3-) = benzene-1,3,5-tricarboxylate) is demonstrated by direct conversion of Cu(OH)2-based monoliths while preserving the characteristic macroporous structure. The high mechanical strength of the monoliths is promising for possible applications to continuous flow reactors.

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

Science.gov (United States)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

Synthesis of Porous Carbon Monoliths Using Hard Templates.

Science.gov (United States)

Klepel, Olaf; Danneberg, Nina; Dräger, Matti; Erlitz, Marcel; Taubert, Michael

2016-03-21

The preparation of porous carbon monoliths with a defined shape via template-assisted routes is reported. Monoliths made from porous concrete and zeolite were each used as the template. The porous concrete-derived carbon monoliths exhibited high gravimetric specific surface areas up to 2000 m²·g -1 . The pore system comprised macro-, meso-, and micropores. These pores were hierarchically arranged. The pore system was created by the complex interplay of the actions of both the template and the activating agent as well. On the other hand, zeolite-made template shapes allowed for the preparation of microporous carbon monoliths with a high volumetric specific surface area. This feature could be beneficial if carbon monoliths must be integrated into technical systems under space-limited conditions.

Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

Spaceflight 2 um Tm Fiber MOPA Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Fibertek proposes to design, develop, and test a spaceflight prototype 2051 nm thulium (Tm)-doped fiber amplifier (TDFA) optical master oscillator power amplifier...

BER and optimal power allocation for amplify-and-forward relaying using pilot-aided maximum likelihood estimation

KAUST Repository

Wang, Kezhi

2014-10-01

Bit error rate (BER) and outage probability for amplify-and-forward (AF) relaying systems with two different channel estimation methods, disintegrated channel estimation and cascaded channel estimation, using pilot-aided maximum likelihood method in slowly fading Rayleigh channels are derived. Based on the BERs, the optimal values of pilot power under the total transmitting power constraints at the source and the optimal values of pilot power under the total transmitting power constraints at the relay are obtained, separately. Moreover, the optimal power allocation between the pilot power at the source, the pilot power at the relay, the data power at the source and the data power at the relay are obtained when their total transmitting power is fixed. Numerical results show that the derived BER expressions match with the simulation results. They also show that the proposed systems with optimal power allocation outperform the conventional systems without power allocation under the same other conditions. In some cases, the gain could be as large as several dB\\'s in effective signal-to-noise ratio.

BER and optimal power allocation for amplify-and-forward relaying using pilot-aided maximum likelihood estimation

KAUST Repository

Wang, Kezhi; Chen, Yunfei; Alouini, Mohamed-Slim; Xu, Feng

2014-01-01

Bit error rate (BER) and outage probability for amplify-and-forward (AF) relaying systems with two different channel estimation methods, disintegrated channel estimation and cascaded channel estimation, using pilot-aided maximum likelihood method in slowly fading Rayleigh channels are derived. Based on the BERs, the optimal values of pilot power under the total transmitting power constraints at the source and the optimal values of pilot power under the total transmitting power constraints at the relay are obtained, separately. Moreover, the optimal power allocation between the pilot power at the source, the pilot power at the relay, the data power at the source and the data power at the relay are obtained when their total transmitting power is fixed. Numerical results show that the derived BER expressions match with the simulation results. They also show that the proposed systems with optimal power allocation outperform the conventional systems without power allocation under the same other conditions. In some cases, the gain could be as large as several dB's in effective signal-to-noise ratio.

A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

International Nuclear Information System (INIS)

Poelker, M.; Hansknecht, J.

1996-01-01

The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

Synthesis and applications of crack-free SiO2 monolith containing CdSe/ZnS quantum dots as passive lighting sources.

Science.gov (United States)

Yi, Dong Kee

2008-09-01

A reverse microemulsion technique has been used to synthesize quantum dot nanocomposites within a SiO2 surface coating. With this approach, the unique optical properties of the CdSe/ZnS quantum dots were preserved. CdSe/ZnS/SiO2 nanoparticles were homogeneously distributed in a tetramethyl orthosilicate ethanol solution and gelation process was initiated within a 10 min, and was left over night at room temperature and dried fully to achieve a solid SiO, monolith. The resulting monolith was transparent and fluorescent under ultraviolet (UV) lamp. Moreover the monolith produced was crack-free. Further studies on the photo stability of the monolith were performed using a high power UV LED device. Remarkably, quantum dots in the SiO, monolith showed better photo stability compared with those dispersed in a polymer matrix.

Study of built-in amplifier performance on HV-CMOS sensor for the ATLAS phase-II strip tracker upgrade

Energy Technology Data Exchange (ETDEWEB)

Liang, Z., E-mail: zhijun.liang@cern.ch [University of California Santa Cruz, Santa Cruz Institute for Particle Physics (SCIPP) (United States); Institute of High Energy Physics, Beijing (China); Affolder, A. [University of Liverpool (United Kingdom); Arndt, K. [University of Oxford (United Kingdom); Bates, R. [SUPA – School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Benoit, M.; Di Bello, F. [University of Geneva (Switzerland); Blue, A. [SUPA – School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Bortoletto, D. [University of Oxford (United Kingdom); Buckland, M. [University of Liverpool (United Kingdom); CERN, European Center for Nuclear Research (Switzerland); Buttar, C. [SUPA – School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Caragiulo, P. [SLAC National Accelerator Laboratory (United States); Das, D.; Dopke, J. [Rutherford Appleton Laboratory, Didcot (United Kingdom); Dragone, A. [SLAC National Accelerator Laboratory (United States); Ehrler, F. [Karlsruhe Institute of Technology (Germany); Fadeyev, V.; Galloway, Z.; Grabas, H. [University of California Santa Cruz, Santa Cruz Institute for Particle Physics (SCIPP) (United States); Gregor, I.M. [Deutsches Elektronen-Synchrotron (Germany); Grenier, P. [SLAC National Accelerator Laboratory (United States); and others

2016-09-21

This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS sensor is 10 times lower than for a conventional planar sensor, it is crucial to integrate a low noise built-in amplifier on the sensor chip to improve the signal to noise ratio of the system. As part of the investigation for the ATLAS strip detector upgrade, a test chip that comprises several pixel arrays with different geometries, as well as standalone built-in amplifiers and built-in amplifiers in pixel arrays has been fabricated in a 0.35 μm high-voltage CMOS process. Measurements of the gain and the noise of both the standalone amplifiers and built-in amplifiers in pixel arrays were performed before and after gamma radiation of up to 60 Mrad. Of special interest is the variation of the noise as a function of the sensor capacitance. We optimized the configuration of the amplifier for a fast rise time to adapt to the LHC bunch crossing period of 25 ns, and measured the timing characteristics including jitter. Our results indicate an adequate amplifier performance for monolithic structures used in HV-CMOS technology. The results have been incorporated in the next submission of a large-structure chip.

SINGLE CONVERSION ISOLATED IMPEDANCE TRANSFORMATION AMPLIFIER

DEFF Research Database (Denmark)

2003-01-01

The invention relates to a switch mode power amplifier. A first and a second change-over switch are inserted between a DC voltage supply and a primary side of an isolation transformer. Two secondary windings are connected to a power output terminal. A first and a second secondary side power switc...

Traveling-Wave Tube Amplifier for THz Frequencies

DEFF Research Database (Denmark)

Kotiranta, Mikko; Krozer, Viktor; Zhurbenko, Vitaliy

tubes and gas lasers, but the ones available are too expensive or large for many applications. This work is related to the European project OPTHER (Optically driven terahertz amplifiers) which aims to realise a compact, powerful and efficient vacuum tube amplifier for the frequency range of 0.3 – 2...

Deep UV light generation by a fiber/bulk hybrid amplifier at 199 nm

International Nuclear Information System (INIS)

Urata, Yoshiharu; Shinozaki, Tatsuya; Wada, Yoshio; Kaneda, Yushi; Wada, Satoshi; Imai, Shinichi

2009-01-01

A high-pulse-repetition-frequency (PRF) pulsed light source in the deep ultraviolet region has been realized by a multiple wavelength conversion technique using a hybrid fiber/bulk amplifier system. Output of 199 nm with a power of 50 mW was achieved at 2.4 MHz PRF. The 1 μm amplifier consisted of a Yb-doped fiber amplifier and a Nd-doped YVO4 amplifier. A 1.5 μm fiber master-oscillator power amplifier was employed as the other fundamental source. The amplifiers exhibited good amplification properties in pulse energy, polarization extinction ratio, and spectrum for nonlinear wavelength conversion

High-performace cladding-pumped erbium-doped fibre laser and amplifier

International Nuclear Information System (INIS)

Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Lipatov, D S; Vechkanov, N N; Guryanov, Aleksei N

2012-01-01

We report cladding-pumped erbium-doped fibre laser and amplifier configurations. Through fibre design optimisation, we have achieved a record-high laser slope efficiency, 40 % with respect to absorbed pump power (λ = 976 nm), and an output power of 7.5 W. The erbium-doped fibre amplifier efficiency reaches 32 %.

Pulsed hybrid dual wavelength Y-branch-DFB laser-tapered amplifier system suitable for water vapor detection at 965 nm with 16 W peak power

Science.gov (United States)

Vu, Thi N.; Klehr, Andreas; Sumpf, Bernd; Hoffmann, Thomas; Liero, Armin; Tränkle, Günther

2016-03-01

A master oscillator power amplifier system emitting alternatingly at two neighbored wavelengths around 965 nm is presented. As master oscillator (MO) a Y-branch DFB-laser is used. The two branches, which can be individually controlled, deliver the two wavelengths needed for a differential absorption measurement of water vapor. Adjusting the current through the DFB sections, the wavelength can be adjusted with respect to the targeted either "on" or "off" resonance, respectively wavelength λon or wavelength λoff. The emission of this laser is amplified in a tapered amplifier (TA). The ridge waveguide section of the TA acts as optical gate to generate short pulses with duration of 8 ns at a repetition rate of 25 kHz, the flared section is used for further amplification to reach peak powers up to 16 W suitable for micro-LIDAR (Light Detection and Ranging). The necessary pulse current supply user a GaN-transistor based driver electronics placed close to the power amplifier (PA). The spectral properties of the emission of the MO are preserved by the PA. A spectral line width smaller than 10 pm and a side mode suppression ratio (SMSR) of 37 dB are measured. These values meet the demands for water vapor absorption measurements under atmospheric conditions.

Design, development and characterization studies of a large aperture high power Nd : glass rod amplifier stage

International Nuclear Information System (INIS)

Gopi, N.; Bapna, R.C.; Murali, C.G.; Narayan, B.S.; Dhareshwar, L.J.

1992-01-01

Laser-plasma interaction studies and experiments related to laser driven shocks as well as laser induced inertially confined thermonuclear fusion have resulted in an ever increasing demand for high brightness lasers capable of producing nanosecond pulse with energy of hundreds of kilo joules. High power Nd-glass laser chains with a master oscillator followed by a number of amplifier stages made up of rods, disks, slabs etc. are in operation in many leading laboratories in the world. This report describes the design, development and characterisation studies of a large aperture Nd:glass laser amplifier which is to be incorporated on line with the existing 40 J, 5 ns high power laser chain built for laser-plasma interaction and laser driven shock wave studies in the Laser and Plasma Technology Division. The development work described in this report discusses the design based on optimum material selection, optimisation of various sub components, ease of maintenance and smooth operation. The necessary operational electronics has also been described. The characterization studies mainly include measurement of spatial gain uniformity, thermally induced depolarization effects, and thermal relaxation studies. (author). 37 refs., 14 figs., 5 tabs

Poly(ethylenimine)-Functionalized Monolithic Alumina Honeycomb Adsorbents for CO2 Capture from Air.

Science.gov (United States)

Sakwa-Novak, Miles A; Yoo, Chun-Jae; Tan, Shuai; Rashidi, Fereshteh; Jones, Christopher W

2016-07-21

The development of practical and effective gas-solid contactors is an important area in the development of CO2 capture technologies. Target CO2 capture applications, such as postcombustion carbon capture and sequestration (CCS) from power plant flue gases or CO2 extraction directly from ambient air (DAC), require high flow rates of gas to be processed at low cost. Extruded monolithic honeycomb structures, such as those employed in the catalytic converters of automobiles, have excellent potential as structured contactors for CO2 adsorption applications because of the low pressure drop imposed on fluid moving through the straight channels of such structures. Here, we report the impregnation of poly(ethylenimine) (PEI), an effective aminopolymer reported commonly for CO2 separation, into extruded monolithic alumina to form structured CO2 sorbents. These structured sorbents are first prepared on a small scale, characterized thoroughly, and compared with powder sorbents with a similar composition. Despite consistent differences observed in the filling of mesopores with PEI between the monolithic and powder sorbents, their performance in CO2 adsorption is similar across a range of PEI contents. A larger monolithic cylinder (1 inch diameter, 4 inch length) is evaluated under conditions closer to those that might be used in large-scale applications and shows a similar performance to the smaller monoliths and powders tested initially. This larger structure is evaluated over five cycles of CO2 adsorption and steam desorption and demonstrates a volumetric capacity of 350 molCO2  m-3monolith and an equilibration time of 350 min under a 0.4 m s(-1) linear flow velocity through the monolith channels using 400 ppm CO2 in N2 as the adsorption gas at 30 °C. This volumetric capacity surpasses that of a similar technology considered previously, which suggested that CO2 could be removed from air at an operating cost as low as $100 per ton. © 2016 WILEY-VCH Verlag

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

Science.gov (United States)

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-04-04

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture

International Nuclear Information System (INIS)

Giubilato, P.; Battaglia, M.; Bisello, D.; Caselle, M.; Chalmet, P.; Demaria, L.; Ikemoto, Y.; Kloukinas, K.; Mansuy, S.C.; Mattiazzo, S.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Silvestrin, L.; Snoeys, W.

2013-01-01

The LePix projects aim realizing a new generation monolithic pixel detectors with improved performances at lesser cost with respect to both current state of the art monolithic and hybrid pixel sensors. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This allows charge collection by drift while maintaining the other advantages usually offered by MAPS, like having a single piece detector and using a standard CMOS production line. The collection by drift mechanism, coupled to the low capacitance design of the collecting node made possible by the monolithic approach, provides an excellent signal to noise ratio straight at the pixel cell together with a radiation tolerance far superior to conventional un-depleted MAPS. The excellent signal-to-noise performance is demonstrated by the device ability to separate the 6 keV 55 Fe double peak at room temperature. To achieve high granularity (10–20 µm pitch pixels) over large detector areas maintaining high readout speed, a completely new compressing architecture has been devised. This architecture departs from the mainstream hybrid pixel sparsification approach, which uses in-pixel logic to reduce data, by using topological compression to minimize pixel area and power consumption

Power Allocation Strategies for Distributed Space-Time Codes in Amplify-and-Forward Mode

Directory of Open Access Journals (Sweden)

Are Hjørungnes

2009-01-01

Full Text Available We consider a wireless relay network with Rayleigh fading channels and apply distributed space-time coding (DSTC in amplify-and-forward (AF mode. It is assumed that the relays have statistical channel state information (CSI of the local source-relay channels, while the destination has full instantaneous CSI of the channels. It turns out that, combined with the minimum SNR based power allocation in the relays, AF DSTC results in a new opportunistic relaying scheme, in which the best relay is selected to retransmit the source's signal. Furthermore, we have derived the optimum power allocation between two cooperative transmission phases by maximizing the average received SNR at the destination. Next, assuming M-PSK and M-QAM modulations, we analyze the performance of cooperative diversity wireless networks using AF opportunistic relaying. We also derive an approximate formula for the symbol error rate (SER of AF DSTC. Assuming the use of full-diversity space-time codes, we derive two power allocation strategies minimizing the approximate SER expressions, for constrained transmit power. Our analytical results have been confirmed by simulation results, using full-rate, full-diversity distributed space-time codes.

Nano-Doped Monolithic Materials for Molecular Separation

Directory of Open Access Journals (Sweden)

Caleb Acquah

2017-01-01

Full Text Available Monoliths are continuous adsorbents that can easily be synthesised to possess tuneable meso-/macropores, convective fluid transport, and a plethora of chemistries for ligand immobilisation. They are grouped into three main classes: organic, inorganic, and hybrid, based on their chemical composition. These classes may also be differentiated by their unique morphological and physicochemical properties which are significantly relevant to their specific separation applications. The potential applications of monoliths for molecular separation have created the need to enhance their characteristic properties including mechanical strength, electrical conductivity, and chemical and thermal stability. An effective approach towards monolith enhancement has been the doping and/or hybridization with miniaturized molecular species of desirable functionalities and characteristics. Nanoparticles are usually preferred as dopants due to their high solid phase dispersion features which are associated with improved intermolecular adsorptive interactions. Examples of such nanomaterials include, but are not limited to, carbon-based, silica-based, gold-based, and alumina nanoparticles. The incorporation of these nanoparticles into monoliths via in situ polymerisation and/or post-modification enhances surface adsorption for activation and ligand immobilisation. Herein, insights into the performance enhancement of monoliths as chromatographic supports by nanoparticles doping are presented. In addition, the potential and characteristics of less common nanoparticle materials such as hydroxyapatite, ceria, hafnia, and germania are discussed. The advantages and challenges of nanoparticle doping of monoliths are also discussed.

Monolith electroplating process

Science.gov (United States)

Agarrwal, Rajev R.

2001-01-01

An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

Multi-layered hierarchical nanostructures for transparent monolithic dye-sensitized solar cell architectures

Science.gov (United States)

Passoni, Luca; Fumagalli, Francesco; Perego, Andrea; Bellani, Sebastiano; Mazzolini, Piero; Di Fonzo, Fabio

2017-06-01

Monolithic dye-sensitized solar cell (DSC) architectures hold great potential for building-integrated photovoltaics applications. They indeed benefit from lower weight and manufacturing costs as they avoid the use of a transparent conductive oxide (TCO)-coated glass counter electrode. In this work, a transparent monolithic DSC comprising a hierarchical 1D nanostructure stack is fabricated by physical vapor deposition techniques. The proof of concept device comprises hyperbranched TiO2 nanostructures, sensitized by the prototypical N719, as photoanode, a hierarchical nanoporous Al2O3 spacer, and a microporous indium tin oxide (ITO) top electrode. An overall 3.12% power conversion efficiency with 60% transmittance outside the dye absorption spectral window is demonstrated. The introduction of a porous TCO layer allows an efficient trade-off between transparency and power conversion. The porous ITO exhibits submicrometer voids and supports annealing temperatures above 400 °C without compromising its optoelectronical properties. After thermal annealing at 500 °C, the resistivity, mobility, and carrier concentration of the 800 nm-thick porous ITO layer are found to be respectively 2.3 × 10-3 Ω cm-1, 11 cm2 V-1 s-1, and 1.62 × 1020 cm-3, resulting in a series resistance in the complete device architecture of 45 Ω. Electrochemical impedance and intensity-modulated photocurrent/photovoltage spectroscopy give insight into the electronic charge dynamic within the hierarchical monolithic DSCs, paving the way for potential device architecture improvements.

A monolithic 3.1-4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS

International Nuclear Information System (INIS)

Zheng Renliang; Jiang Xudong; Yao Wang; Yang Guang; Yin Jiangwei; Zheng Jianqin; Ren Junyan; Li Wei; Li Ning

2010-01-01

A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented. The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA, a I/Q merged quadrature mixer, a fifth-order Gm-C bi-quad Chebyshev LPF/VGA, a fast-settling frequency synthesizer with a poly-phase filter, a linear broadband up-conversion quadrature modulator, an active D2S converter and a variable-gain power amplifier. The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-μm RF CMOS with an area of 6.1 mm 2 and draws a total current of 221 mA from 1.8-V supply. The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step, noise figures of 5.5-8.8 dB for three sub-bands, and an in-band/out-band IIP3 better than -4 dBm/+9 dBm. The transmitter achieves an output power ranging from -10.7 to -3 dBm with gain control, an output P 1dB better than -7.7 dBm, a sideband rejection about 32.4 dBc, and LO suppression of 31.1 dBc. The hopping time among sub-bands is less than 2.05 ns. (semiconductor integrated circuits)

Translucency and Strength of High-Translucency Monolithic Zirconium-Oxide Materials

Science.gov (United States)

2016-05-12

Capt Todd D. Church APPROVED: Translucency and Strength of High-Translucency Monolithic Zirconium -Oxide Materials C~t) Kraig/[ Vandewalle Date...copyrighted material in the thesis/dissertation manuscript entitled: "Translucency arid Strength of High-Translucency Monolithic Zirconium -Oxide...Translucency Monolithic Zirconium -Oxide Materials Abstract Dental materials manufacturers have developed more translucent monolithic zirconium oxide

Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

Institute of Scientific and Technical Information of China (English)

ZHANG Peng; WU Si-liang; ZHANG Qin

2008-01-01

To compensate for nonlinear distortion introduced by RF power amplifiers (PAs) with memory effects, two correlated models, namely an extended memory polynomial (EMP) model and a memory lookup table (LUT) model, are proposed for predistorter design. Two adaptive digital predistortion (ADPD) schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square (RLS) algorithm, and the other utilizes the memory LUT model and the least mean square (LMS) algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

Volterra series based predistortion for broadband RF power amplifiers with memory effects

Institute of Scientific and Technical Information of China (English)

Jin Zhe; Song Zhihuan; He Jiaming

2008-01-01

RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

Fundamentals of RF and microwave transistor amplifiers

CERN Document Server

Bahl, Inder J

2009-01-01

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors