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Sample records for monolithic pin diodes

  1. Monolithic resonant optical reflector laser diodes

    Science.gov (United States)

    Hirata, T.; Suehiro, M.; Maeda, M.; Hihara, M.; Hosomatsu, H.

    1991-10-01

    The first monolithic resonant optical reflector laser diode that has a waveguide directional coupler and two DBR reflectors integrated by compositional disordering of quantum-well heterostructures is described. A linewidth of 440 kHz was obtained, and this value is expected to be greatly decreased by reducing the propagation loss in the integrated waveguide.

  2. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  3. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Science.gov (United States)

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  4. Motion of current filaments in avalanching PIN diodes

    Science.gov (United States)

    Xingrong, Ren; Changchun, Chai; Zhenyang, Ma; Yintang, Yang; Liping, Qiao; Chunlei, Shi; Lihua, Ren

    2013-04-01

    The motion of current filaments in avalanching PIN diodes has been investigated in this paper by 2D transient numerical simulations. The simulation results show that the filament can move along the length of the PIN diode back and forth when the self-heating effect is considered. The voltage waveform varies periodically due to the motion of the filament. The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates. Contrary to the traditional understanding that current filamentation is a potential cause of thermal destruction, it is shown in this paper that the thermally-driven motion of current filaments leads to the homogenization of temperature in the diode and is expected to have a positive influence on the failure threshold of the PIN diode.

  5. Strain tunable light emitting diodes with germanium P-I-N heterojunctions

    Science.gov (United States)

    Lagally, Max G; Sanchez Perez, Jose Roberto

    2016-10-18

    Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

  6. Spectrometry and dosimetry of fast neutrons using pin diode detectors

    Energy Technology Data Exchange (ETDEWEB)

    Zaki Dizaji, H., E-mail: hz.dizaji@znu.ac.ir [Physics Department, Faculty of Science, Zanjan University, Zanjan (Iran, Islamic Republic of); Kakavand, T. [Physics Department, Faculty of Science, International Imam Khomeini University, Qazvin (Iran, Islamic Republic of); Abbasi Davani, F. [Radiation Application Department, Shahid Beheshti University, Tehran (Iran, Islamic Republic of)

    2014-03-21

    Elastic scattering of light nuclei, especially hydrogen, is widely used for detection of fast neutrons. Semiconductor devices based on silicon detectors are frequently used for different radiation detections. In this work, a neutron spectrometer consisting of a pin diode coupled with a polyethylene converter and aluminum degrader layers has been developed. Aluminum layers are used as discriminators of different neutron energies for detectors. The response of the converter–degrader–pin diode configuration, the optimum thickness of the converter and the degrader layers have been extracted using MCNP and SRIM simulation codes. The possibility of using this type of detector for fast neutron spectrometry and dosimetry has been investigated. A fairly good agreement was seen between neutron energy spectrum and dose obtained from our configurations and these specifications from an {sup 241}Am–Be neutron source. - Highlights: • Silicon pin diodes are applied to the fast neutron detection. • The technique of converter degrader pin diode is used for spectrometry of fast neutrons. • The method is used for dosimetry of fast neutron.

  7. Monolithically Peltier-cooled laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hava, S.; Hunsperger, R.G.; Sequeira, H.B.

    1984-04-01

    A new method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and heat spreading device to the laser, is presented. This cooling both reduces and stabilizes the laser junction temperature to minimize such deleterious effects as wavelength drift due to heating. A unified description of the electrical and thermal properties of a monolithic semiconductor mesa structure is given. Here it is shown that an improvement in thermal characteristics is obtained by depositing a relatively thick metallic layer, and by using this layer as a part of an active Peltier structure. Experimental results reveal a 14-percent increase in emitted power (external quantum efficiency) due to passive heat spreading and a further 8-percent if its Peltier cooler is operated. Fabrication techniques used to obtain devices exhibiting the above performance characteristics are given. 21 references.

  8. An Analysis of the Equivalent Resistance of PIN Diodes at Microwave Frequencies

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-yu; SONG Kai-jun; MAO Rui-jie; LU Shi-qiang

    2004-01-01

    The forward bias equivalent resistance of PIN diodes, an important parameter in applications, is usually measured at lower frequencies. But in fact, due to skin effect the effective conduction area of the region I of a PIN diode decreases as the frequency increases. In this paper, the affection of skin effect to forward bias equivalent resistance is considered and an analytic expression of the equivalent resistance of the region I is presented. In result, the forward bias resistance ora PIN diode at microwave frequencies is much higher than that at DC and low frequencies. It is necessary, therefore,to consider the skin effect of PIN diodes in high frequency applications.

  9. Tunneling spectroscopy of a p-i-n diode interface

    Energy Technology Data Exchange (ETDEWEB)

    Loth, Sebastian; Wenderoth, Martin; Teichmann, Karen; Homoth, Jan; Loeser, Karolin; Ulbrich, Rainer G. [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Malzer, Stefan; Doehler, Gottfried H. [Universitaet Erlangen-Nuernberg (Germany). Max-Planck-Research Group, Institute of Optics, Information, and Photonics

    2008-07-01

    The performance of modern semiconductor devices is largely influenced by the spatial distribution of dopants in the device's active region on the nanoscale. Since the late 80's Scanning Tunneling Microscopy (STM) was employed to study the local properties of p-n interfaces. Most studies were carried out on p-n superlattices allowing the investigation of intrinsic features accessible without applied bias across the diode. Here, a single GaAs p-i-n diode heterostructure is investigated with cross-sectional STM (X-STM) in a three-terminal configuration. External source and drain contacts control the electric field across the junction. Then, the diode's active region is mapped with atomic resolution. Local I(V)-spectroscopy (STS) directly resolves the band edge alignment from p to n for different diode bias conditions. The effect of the external electric field on the spatial and spectral images of individual dopant atoms in the active layer is discussed.

  10. High-performance monolithic PIN-MODFET transimpedance photoreceiver

    Science.gov (United States)

    Gutierrez-Aitken, A. L.; Bhattacharya, P.; Chen, Y. C.; Pavlidis, D.; Brock, T.

    1993-08-01

    The performance characteristics of a transimpedance photoreceiver using an In(0.53)Ga(0.47)As p-i-n photodiode integrated with a 0.1-micron gate length regrown pseudomorphic In(0.60)Ga(0.40)As MODFET grown by MBE were investigated. The regrown MODFET's have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver exhibits a FWHM value of 90 ps, which indicates a bandwidth of approximately 6 GHz and expected 10-Gb/s operation. The transimpedance gain was as high as 55 dB-ohm with an 800-ohm feedback resistor.

  11. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    Science.gov (United States)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  12. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    Science.gov (United States)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  13. A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver

    Science.gov (United States)

    Cui, Hailin; Zhou, Shouli; Huang, Hui; Huang, Yongqing; Ren, Xiaomin

    2005-11-01

    Adding resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver is described. Between the InP buffer and device epitaxial structure, InP/InGaAsP quarter wavelength stack (QWS) are used to form DBR (Distributed Bragg Reflectors) mirror. The PIN-PD is integrated within a Fabry-Perot cavity and the incident light is reflected many times by the Fabry-Perot cavity and consequently absorbed many times by the absorption layer. Therefore, the quantum efficiency of this detector is enlarged, meanwhile other performances such as frequency response are not influenced. We discuss the method to fabricate the resonance cavity, make theory simulation, optimize design on it, and analyze the advantage of this device.

  14. Comparison between a silicon PIN diode and a CsI(Tl) coupled to a silicon PIN diode for dosimetric purpose in radiology

    Science.gov (United States)

    Andreani, Lucia; Bontempi, Marco; Rossi, Pier Luca; Rignanese, Luigi Pio; Zuffa, Mirco; Baldazzi, Giuseppe

    2014-10-01

    The use of amorphous Si-PIN diodes showed interesting applications in detector research. Due to their properties and cost effective value, these devices can be used as small dosimeters for fast and real time dose evaluation. The responses of two different detectors to the measurement of X-ray total air KERMA are compared and presented, with the goal to get a dosimetric parameter directly during the X-ray patients exposure. A bare Si-PIN diode and a Si-PIN diode+CsI(Tl) scintillator were tested and compared to radiologic dosimeters. Both detector outputs were calibrated using a secondary reference standard (CAPINTEC PM 30 dosimeter), in order to analyze and discuss the dose and the energy dependence of the detectors in the range of radiologic interest (tube voltage: 40-140 kVp and additional filtration: 0 mm Al to 4 mm Al). The bare Si-PIN diode shows a very coherent response independently from the X-ray beam quality and from the additional filtration. The Si-PIN+CsI(Tl) detector, on the other hand, shows a high spread of the calibration curves as a function of the tube high voltage and the additional filtration. The presented results could be used to calibrate an image detector in dose.

  15. Comparison between a silicon PIN diode and a CsI(Tl) coupled to a silicon PIN diode for dosimetric purpose in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Andreani, Lucia, E-mail: lucia.andreani4@unibo.it [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Bontempi, Marco [Laboratorio NaBi, Istituto Ortopedico Rizzoli, via di Barbiano 1/10, 40136 Bologna (Italy); Rossi, Pier Luca [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Rignanese, Luigi Pio [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); Zuffa, Mirco [INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Baldazzi, Giuseppe [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy)

    2014-10-21

    The use of amorphous Si-PIN diodes showed interesting applications in detector research. Due to their properties and cost effective value, these devices can be used as small dosimeters for fast and real time dose evaluation. The responses of two different detectors to the measurement of X-ray total air KERMA are compared and presented, with the goal to get a dosimetric parameter directly during the X-ray patients exposure. A bare Si-PIN diode and a Si-PIN diode+CsI(Tl) scintillator were tested and compared to radiologic dosimeters. Both detector outputs were calibrated using a secondary reference standard (CAPINTEC PM 30 dosimeter), in order to analyze and discuss the dose and the energy dependence of the detectors in the range of radiologic interest (tube voltage: 40–140 kVp and additional filtration: 0 mm Al to 4 mm Al). The bare Si-PIN diode shows a very coherent response independently from the X-ray beam quality and from the additional filtration. The Si-PIN+CsI(Tl) detector, on the other hand, shows a high spread of the calibration curves as a function of the tube high voltage and the additional filtration. The presented results could be used to calibrate an image detector in dose.

  16. Gratings and Random Reflectors for Near-Infrared PIN Diodes

    Science.gov (United States)

    Gunapala, Sarath; Bandara, Sumith; Liu, John; Ting, David

    2007-01-01

    Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the

  17. High-performance vertical Si PiN diode by hole remaining mechanism

    Science.gov (United States)

    Tsukuda, Masanori; Baba, Akiyoshi; Shiba, Yuji; Omura, Ichiro

    2017-03-01

    A novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

  18. Characterization of an Mg-implanted GaN p-i-n Diode

    Science.gov (United States)

    2016-03-31

    The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for...future power electronic devices. Keywords: GaN, p-i-n diode, ion implantation Introduction III-nitride materials have attracted a continuous interest...implantation to a concentration of 2x1019 cm-3 following a box profile to a depth of 500nm. A photoresist mask was used for the implantation, aligned to

  19. Laser-diode-pumped 1319-nm monolithic non-planar ring single-frequency laser

    Institute of Scientific and Technical Information of China (English)

    Qing Wang(王青); Chunqing Gao(高春清); Yan Zhao(赵严); Suhui Yang(杨苏辉); Guanghui Wei(魏光辉); Dongmei Hong(洪冬梅)

    2003-01-01

    Single-frequency 1319-nm laser was obtained by using a laser-diode-pumped monolithic Nd:YAG crystalwith a non-planar ring oscillator (NPRO). When the NPRO laser was pumped by an 800-μm fiber coupledlaser diode, the output power of the single-frequency 1319-nm laser was 220 mW, and the slope efficiencywas 16%. With a 100-μm fiber coupled diode laser pumped, 99-mW single-frequency 1319-nm laser wasobtained with a slope efficiency of 29%.

  20. Research on reverse recovery characteristics of SiGeC p-i-n diodes

    Institute of Scientific and Technical Information of China (English)

    Gao Yong; Liu Jing; Yang Yuan

    2008-01-01

    This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon,compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

  1. Transverse modes of a diode-laser pumped monolithic unidirectional non-planar ring laser

    Institute of Scientific and Technical Information of China (English)

    Keying Wu(吴克瑛); Suhui Yang(杨苏辉); Guanghui Wei(魏光辉)

    2003-01-01

    Diode-laser pumped monolithic single-frequency non-planar ring laser has the advantages of compactness,reliability and high efficiency. But when the pump power is high enough, the thermal effect will be seriousand the high-order transverse modes will appear. Therefore the single-mode output power is limited. Inthis paper, the mechanism of generating the high-order transverse modes in the monolithic unidirectionalnon-planar ring cavity is analyzed using ray tracing method. The calculated results are in agreement withthe experiments.

  2. Fabrication of PIN diode detectors on thinned silicon wafers

    CERN Document Server

    Ronchin, Sabina; Dalla Betta, Gian Franco; Gregori, Paolo; Guarnieri, Vittorio; Piemonte, Claudio; Zorzi, Nicola

    2004-01-01

    Thin substrates are one of the possible choices to provide radiation hard detectors for future high-energy physics experiments. Among the advantages of thin detectors are the low full depletion voltage, even after high particle fluences, the improvement of the tracking precision and momentum resolution and the reduced material budget. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of tetra-methyl ammonium hydroxide etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 57 and 99mum thick membranes. They have been tested, showing a very low leakage current ( less than 0.4nA/cm**2) and, as expected, a very low depletion voltage ( less than 1V for the 57mum membrane). The paper describes the technological approach used for devices fabrication and reports selected results from the electrical characterization.

  3. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  4. Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device

    Institute of Scientific and Technical Information of China (English)

    Jiang Yibo; Du Huan; Han Zhengsheng

    2012-01-01

    The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge (ESD) protection device.This paper presents the reverse breakdown,current leakage and capacitance characteristics of fabricated polysilieon p-i-n diodes.To evaluate the ESD robustness,the forward and reverse TLP Ⅰ-Ⅴ characteristics were measured.The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage.Finally,to explain the effects of the device parameters,we analyze and discuss the inherent properties of polysilicon p-i-n diodes.

  5. Resonant-cavity based monolithic white light-emitting diode

    Science.gov (United States)

    Huang, Lirong; Huang, Dexiu; Wen, Feng

    2007-11-01

    We propose a new scheme of resonant-cavity (RC) based monolithic white LED, it relaxes the hard requirement of high internal quantum efficiency of yellow multi-quantum (MQW) and offers an easy way to obtain high luminous efficacy white light emission. In the proposed white LED, the blue MQW and yellow MQW active layer are embedded in a resonant-cavity defined by the bottom distributed Bragg reflector(DBR) and top DBR. For a optimal design of RC-based white LED, the extraction efficiency for yellow light is enhanced, while that for blue light is suppressed, thus intensity ratio of yellow light in the emitting light is increased, which not only helps to obtain white emission in spite of the low internal quantum efficiency of yellow light, but also doubles luminous efficacy. The color coordinates and luminous flux of the emitting light from RC-based white LED are calculated and the performance dependence on directionality is investigated.

  6. Study of silicon PIN diode responses to low energy gamma-rays

    Science.gov (United States)

    Lee, S. C.; Jeon, H. B.; Kang, K. H.; Park, H.

    2016-11-01

    Low energy gamma-ray detectors play an important role in diagnosis in nuclear medicine, in detection of gamma-ray bursts for gravitational wave research and in detection of underground nuclear tests. The silicon positive-intrinsic-negative (PIN) diode detector is useful for detection of low energy gamma radiation without using a scintillator because it generates a high signal in a small active volume, has a fast response time and has good intrinsic energy resolution. We measured the detector responses, energy resolutions and signal-to-noise ratios for various gamma energies by using manufactured silicon PIN diode and photodiodes. Radioactive gamma sources, 241Am, 133Ba, and 57Co, providing gamma-rays with energies between 14.4 keV and 136.5 keV are used for the measurements. The energy resolution and the signal-to-noise ratio for 14.4 keV gamma-ray are measured to be 17.1 % and 12.8 for a 500 μm thick silicon diode. The energy resolutions measured at the FWHM for 59.5 keV and 122.1 keV gamma-rays by using the silicon diode are better by up to two times compared to those obtained using the NaI:Tl or the BGO scintillator with a photomultiplier tube. The dependence of detection speeds of the signals on the diode's thickness is also measured.

  7. Progress Toward a Monolithically Integrated Coherent Diode Laser Array.

    Science.gov (United States)

    1981-02-20

    B-i C. DBR AND ACTIVE-PASSIVE LASER FABRICATION PROCEDURE ............... C-I D. ELECTROCHEMICAL DEPOSITION OF OHMIC CONTACTS FOR DIODE... LASER FABRICATION PROCEDURE C.1 SAMPLE EXAMINATION 1. Etch sample in 1:1:8 A-B etch (A:B:H 20 mp) for 5 sec. 2. Photograph all four corners of sample to...GaAlAs waveguide att ,uation coeffi- cients; 1 6 the assumption that K remains the same for both DBRs simplifies con- siderably the actual DBR laser

  8. Analytical model for thin-film SOI PIN-diode leakage current

    Science.gov (United States)

    Schmidt, Andrei; Dreiner, Stefan; Vogt, Holger; Goehlich, Andreas; Paschen, Uwe

    2017-04-01

    An analytical model for the thin-film silicon-on-insulator pin-diode leakage current is presented. Particularly the back-gate potential influence on the leakage current is addressed. The two-dimensional Poisson equation is simplified and then solved including the influence of the back-gate potential. Subsequently the analytical model is verified by comparison with numerical simulation and measurements. For the verification of the model the dependence on the back-gate potential, reverse voltage, device geometry, doping concentration and -polarity is considered. In this procedure the interface recombination velocity is used as fitting parameter. The model verification shows an accurate modeling of the leakage current at full depletion in combination with a back-gate potential dependence. The usage of the model is limited to back-gate and reverse potentials close to full depletion state of the pin-diode.

  9. A High-Speed CMOS Image Sensor with Global Electronic Shutter Pixels Using Pinned Diodes

    Science.gov (United States)

    Yasutomi, Keita; Tamura, Toshihiro; Furuta, Masanori; Itoh, Shinya; Kawahito, Shoji

    This paper describes a high-speed CMOS image sensor with a new type of global electronic shutter pixel. A global electronic shutter is necessary for imaging fast-moving objects without motion blur or distortion. The proposed pixel has two potential wells with pinned diode structure for two-stage charge transfer that enables a global electronic shuttering and reset noise canceling. A prototype high-speed image sensor fabricated in 0.18μm standard CMOS image sensor process consists of the proposed pixel array, 12-bit column-parallel cyclic ADC arrays and 192-channel digital outputs. The sensor achieves a good linearity at low-light intensity, demonstrating the perfect charge transfer between two pinned diodes. The input referred noise of the proposed pixel is measured to be 6.3 e-.

  10. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Shapiro, S.L. (Stanford Linear Accelerator Center, Menlo Park, CA (USA)); Jernigan, J.G.; Arens, J.F. (California Univ., Berkeley, CA (USA). Space Sciences Lab.)

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 {times} 64 pixels, each 120 {mu}m square; and the other format has 256 {times} 156 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs.

  11. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Science.gov (United States)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-12-01

    The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at EC-0.31 eV and EC-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  12. Monolithic photonic integration of suspended light emitting diode, waveguide and photodetector

    CERN Document Server

    Wang, Yongjin; Gao, Xumin; Cai, Wei; Xu, Yin; Yuan, Jialei; Zhu, Guixia; Yang, Yongchao; Cao, Xun; Zhu, Hongbo; Gruenberg, Peter

    2015-01-01

    We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) are used for device fabrication. Part of the LED emission is coupled into suspended waveguide and then, the guided light laterally propagates along the waveguide and is finally sensed by the photodetector. Planar optical communication experimentally demonstrates that the proof-of-concept monolithic photonic integration system can achieve the on-chip optical interconnects. This work paves the way towards novel active electro-optical sensing system and planar optical communication in the visible range.

  13. Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

    Science.gov (United States)

    Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong

    2013-10-01

    We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep InGaN QWs and GaN barriers. Without using any phosphors, this monolithic LED chip can be tuned to realize wide-range multicolor emissions from red to yellow under different injection currents. In partical, when the injection current reaches an upper level above 100 mA, the LEDs will achieve white emission with a very high color rending index (CRI) of 85.6. This color-tunable characteristic is attributed to the carrier redistribution in the shallow/deep QWs and the energy band filling effect as well.

  14. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

    Science.gov (United States)

    Jiang, Qi; Tang, Mingchu; Chen, Siming; Wu, Jiang; Seeds, Alwyn; Liu, Huiyun

    2014-09-22

    We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

  15. Temperature-variable high-frequency dynamic modeling of PIN diode

    Science.gov (United States)

    Shangbin, Ye; Jiajia, Zhang; Yicheng, Zhang; Yongtao, Yao

    2016-04-01

    The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 °C. Project supported by the National High Technology and Development Program of China (No. 2011AA11A265).

  16. Influence of series resistance and cooling conditions on I-V characteristics of SiC merged PiN Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hapka, Aneta, E-mail: hapka@ie.tu.koszalin.pl [Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Sniadeckich 2, Koszalin, Postal Code: 75-453 (Poland); Janke, Wlodzimierz; Krasniewski, Jaroslaw [Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Sniadeckich 2, Koszalin, Postal Code: 75-453 (Poland)

    2012-09-01

    The paper presents the exemplary electro-thermal models of merged PiN Schottky diode - a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I-V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction.

  17. Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation

    Institute of Scientific and Technical Information of China (English)

    GAO Yong; LIU Jing; YANG Yuan

    2008-01-01

    Temperature-dependent characteristics of SiGeC p-i-n diodes are analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400 K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300 K to 400 K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400 K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400 K.

  18. Design and characterization of GaN p-i-n diodes for betavoltaic devices

    Science.gov (United States)

    Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

    2017-10-01

    The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

  19. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

    Energy Technology Data Exchange (ETDEWEB)

    Voss, L F; Shao, Q; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-03-05

    Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.

  20. Performances of Dose Measurement of Commercial Electronic Dosimeters using Geiger Muller Tube and PIN Diode

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hyunjun; Kim, Chankyu; Kim, Yewon; Kim, Giyoon; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2014-05-15

    There are two categories in personal dosimeters, one is passive type dosimeter such as TLD (thermoluminescence dosimeter) and the other is active type dosimeter such as electronic dosimeter can show radiation dose immediately while TLD needs long time to readout its data by heating process. For improving the reliability of measuring dose for any energy of radiations, electronic dosimeter uses energy filter by metal packaging its detector using aluminum or copper, but measured dose of electronic dosimeter with energy filter cannot be completely compensated in wide radiation energy region. So, in this paper, we confirmed the accuracy of dose measurement of two types of commercial EPDs using Geiger Muller tube and PIN diode with CsI(Tl) scintillator in three different energy of radiation field. The experiment results for Cs-137 was almost similar with calculation value in the results of both electronic dosimeters, but, the other experiment values with Na-22 and Co-60 had higher error comparing with Cs-137. These results were caused by optimization of their energy filters. The optimization was depending on its thickness of energy filter. So, the electronic dosimeters have to optimizing the energy filter for increasing the accuracy of dose measurement or the electronic dosimeter using PIN diode with CsI(Tl) scintillator uses the multi-channel discriminator for using its energy information.

  1. Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

    Energy Technology Data Exchange (ETDEWEB)

    Wuestling, Sascha, E-mail: sascha.wuestling@kit.ed [Forschungszentrum Karlsruhe, Institut fuer Prozessdatenverarbeitung und Elektronik, Postfach 3640, 76021 Karlsruhe (Germany); Fraenkle, F.; Habermehl, F.; Renschler, P. [Universitaet Karlsruhe - TH, Institut fuer Experimentelle Kernphysik, Postfach 6980, 76128 Karlsruhe (Germany); Steidl, M [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Postfach 3640, 76021 Karlsruhe (Germany)

    2010-12-11

    The KATRIN neutrino mass experiment is based on a precise energy measurement ({Delta}E/E=5x10{sup -5}) of electrons emerging from tritium beta decay (E{sub max}=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area ({approx}80 cm{sup 2}), a certain energy resolution ({Delta}E=600 eV - 18.6 keV) but also a certain spatial resolution ({approx}3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm{sup 2}) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. , this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement . The detector allows for background searches with a sensitivity as low as 1.3x10{sup -3} cps/cm{sup 2} in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10{sup 5} and the search for ultra low Penning discharge emissions.

  2. Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

    Science.gov (United States)

    Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

    2010-12-01

    The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

  3. Drift Phenomena of Forward and Reverse Recovery Characteristics in 0001 4H-SiC p-i-n Diode

    Science.gov (United States)

    Nakayama, Koji; Sugawara, Yoshitaka; Tsuchida, Hidekazu; Kimura, Chiharu; Aoki, Hidemitsu

    2011-04-01

    4H-SiC p-i-n diodes fabricated on the (0001) C-face showed smaller forward voltage drift and minimal changes in reverse recovery characteristics after a forward bias stress test compared to those observed on the (0001) Si-face. These drift phenomena in 4H-SiC p-i-n diodes could be explained by increased recombination along the perimeter of single Shockley-type stacking faults. It is suggested that the number of single Shockley-type stacking faults significantly decreased in the drift layer fabricated on (0001) C-face in comparison with that on (0001) Si-face.

  4. Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Feng, Wen; Liang, Song; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-06-01

    A 1.60-µm laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3×10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber.

  5. Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

    Science.gov (United States)

    Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

    2014-12-01

    Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry.

  6. On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

    CERN Document Server

    Deveaux, M; Dorokhov, A; Doering, D; Heymes, J; Kachel, M; Koziel, M; Linnik, B; Müntz, C; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is fo...

  7. Absorption properties of GaAsBi based p-i-n heterojunction diodes

    Science.gov (United States)

    Zhou, Zhize; Mendes, Danuta F.; Richards, Robert D.; Bastiman, Faebian; David, John PR

    2015-09-01

    The absorption properties of GaAsBi have been investigated using GaAsBi based p-i-n diodes with different bismuth compositions (˜2.1 and ˜3.4%). The absorption behaviour of GaAsBi as a function of incident photon energy above the band gap follows that of a direct band gap material. With increasing bismuth content, the absorption of photons with energy lower than the band gap in GaAsBi is enhanced, probably due to localized states caused by Bi-related defects. A simplified analysis has been undertaken on the behaviour of absorption as a function of bias voltage. By undertaking photoresponsivity measurements as a function of reverse bias, the background doping type and the minority carriers diffusion lengths in GaAsBi have been determined.

  8. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  9. Calculation of focal positions in an optical head for parallel data processing with a monolithic four-beam laser diode.

    Science.gov (United States)

    Shinoda, M

    2001-03-01

    A method for calculating focal positions in a multibeam optical head by use of a multibeam laser diode, in which conditions for misalignment of the light source are taken into consideration, is introduced. One calculates the focal positions by using the practical characteristics of a monolithic four-beam laser diode and the practical specifications of the optics in an optical head. The results show that each focal position is defocused mainly as a result of curvature of the fields of the lenses. The adaptability of focal positions for various calculated conditions is discussed from the standpoint of depth of focus.

  10. Diode multipliers for submillimeter-wave InAlAs/InGaAs heterostructure monolithic integrated circuits

    Science.gov (United States)

    Kwon, Y.; Pavlidis, D.

    1991-01-01

    InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer, and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

  11. Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography,metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

  12. Current impulse response of thin InP p+-i-n+ diodes using full band structure Monte Carlo method

    Science.gov (United States)

    You, A. H.; Cheang, P. L.

    2007-02-01

    A random response time model to compute the statistics of the avalanche buildup time of double-carrier multiplication in avalanche photodiodes (APDs) using full band structure Monte Carlo (FBMC) method is discussed. The effect of feedback impact ionization process and the dead-space effect on random response time are included in order to simulate the speed of APD. The time response of InP p+-i-n+ diodes with the multiplication region of 0.2μm is presented. Finally, the FBMC model is used to calculate the current impulse response of the thin InP p+-i-n+ diodes with multiplication lengths of 0.05 and 0.2μm using Ramo's theorem [Proc. IRE 27, 584 (1939)]. The simulated current impulse response of the FBMC model is compared to the results simulated from a simple Monte Carlo model.

  13. Quantum oscillations in the photocurrent of GaAs/AlAs p-i-n diodes

    Science.gov (United States)

    Vdovin, E. E.; Ashdown, M.; Patanè, A.; Eaves, L.; Campion, R. P.; Khanin, Yu. N.; Henini, M.; Makarovsky, O.

    2014-05-01

    We report large amplitude quantum oscillations and negative differential conductance in the bias voltage-dependent photocurrent of p-i-n GaAs diodes with an AlAs barrier in the intrinsic (i) region. The oscillations appear only when the devices are illuminated with above-band gap radiation. They are strongly suppressed by a weak (˜2 T) in-plane magnetic field. Their period, amplitude, and magnetic field dependence are explained in terms of the quantized motion of confined photoexcited electrons and holes in the triangular potential wells formed by the AlAs barrier and the strong electric field in the intrinsic region. With increasing electric field, the energy levels of the electrons (holes) successively reach the top of their confining potentials, thus leading to a larger overlap of their wave functions with the free carriers in the p- (and n-) doped electrodes and to the observed oscillatory modulation of the recombination rate and photocurrent as a function of the applied voltage. The effect on the photocurrent oscillations amplitude of placing a layer of InAs quantum dots in the AlAs barrier layer is also examined.

  14. Dead layer on silicon p-i-n diode charged-particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Wall, B. L.; Amsbaugh, John F.; Beglarian, A.; Bergmann, T.; Bichsel, H. C.; Bodine, L. I.; Boyd, N. M.; Burritt, Tom H.; Chaoui, Z.; Corona, T. J.; Doe, Peter J.; Enomoto, S.; Harms, F.; Harper, Gregory; Howe, M. A.; Martin, E. L.; Parno, D. S.; Peterson, David; Petzold, Linda; Renschler, R.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Van Wechel, T. D.; VanDevender, Brent A.; Wustling, S.; Wierman, K. J.; Wilkerson, J. F.

    2014-04-21

    Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  15. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    Energy Technology Data Exchange (ETDEWEB)

    Gallagher, J. D.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Senaratne, C. L.; Sims, P.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Aoki, T. [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287- 1704 (United States)

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  16. Frequency Reconfigurable Circular Patch Antenna with an Arc-Shaped Slot Ground Controlled by PIN Diodes

    Directory of Open Access Journals (Sweden)

    Yao Chen

    2017-01-01

    Full Text Available In this paper, a compact frequency reconfigurable circular patch antenna with an arc-shaped slot loaded in the ground layer is proposed for multiband wireless communication applications. By controlling the ON/OFF states of the five PIN diodes mounted on the arc-shaped slot, the effective length of the arc-shaped slot and the effective length of antennas current are changed, and accordingly six-frequency band reconfiguration can be achieved. The simulated and measured results show that the antenna can operate from 1.82 GHz to 2.46 GHz, which is located in DCS1800 (1.71–1.88 GHz, UMTS (2.11–2.20 GHz, WiBro (2.3–2.4 GHz, and Bluetooth (2.4–2.48 GHz frequency bands and so forth. Compared to the common rectangular slot circular patch antenna, the proposed arc-shaped slot circular patch antenna not only has a better rotational symmetry with the circular patch and substrate but also has more compact size. For the given operating frequency at 1.82 GHz, over 55% area reduction is achieved in this design with respect to the common design with rectangular slot. Since the promising frequency reconfiguration, this antenna may have potential applications in modern multiband and multifunctional mobile communication systems.

  17. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    Science.gov (United States)

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  18. A PIN diode controlled dual-tuned MRI RF coil and phased array for multi nuclear imaging

    Science.gov (United States)

    Ha, Seunghoon; Hamamura, Mark J.; Nalcioglu, Orhan; Tugan Muftuler, L.

    2010-05-01

    MR imaging of nuclei other than hydrogen has been used to investigate metabolism in humans and animals. However, MRI observable nuclei other than hydrogen are not as abundant and as a result the image SNR is lower. Dual-tuned radio frequency (RF) coils are developed for these studies in which high-resolution structural images are acquired using hydrogen and metabolic information is acquired by exciting the other nucleus. Using a dual-tuned coil, the experimenter avoids the inconvenience of moving the patient out and replacing the RF coil for imaging different nuclei. This also eliminates image registration problems. However, the common scheme of using trap circuits for dual-tuned operation results in increased coil losses as well as problems in obtaining optimal tuning and matching at both frequencies. Here, a new approach is presented using PIN diodes to switch the coil between two resonance frequencies. This design eliminates the need for the trap circuit and associated losses from the self-resistance of the trap circuit inductors. At the operating frequencies we used, the equivalent series resistance of an inductor is higher than that of the PIN diodes. In order to test the efficacy of this new approach, we first built two surface coils of identical geometry, one with the conventional trap circuits and one with the PIN diode switches. We also studied the performances of both coils when the coils are divided into shorter conductors segments by adding more tuning elements. It is known that dividing the coil into shorter conductor segments helps reduce radiation and electric field losses. We explored this effect for both coils at both operating frequencies. Finally, a dual-tuned receive-only phased array was designed and built with the PIN diode circuit to switch between two resonance frequencies. A conventional dual-tuned birdcage coil was designed and built to transmit RF power. A unique feature of this coil is that the RF power is fed through two separate sets

  19. A study of the coupling between LO phonons and plasmons in InP p-i-n diodes

    Science.gov (United States)

    Thao, Dinh Nhu

    2017-03-01

    This paper reports a study investigating the coupling between longitudinal optical (LO) phonons and plasmons in InP p-i-n diodes by a numerical simulation. A significant change is observed in the Fourier transform spectra of transient electric field when taking the coupling into account. The findings show two separate peaks instead of a single plasma peak as for non-coupling case. In addition, the bulk-like dispersion relations of the frequencies of those two peaks on the carrier density are found. Therefore, it is proposed that those behaviors manifest the LO phonon-plasmon coupling in the diodes. Also, there is evidence of the peak clipping by the diode itself, a phenomenon not being seen in the bulk InP semiconductor.

  20. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  1. Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

    CERN Document Server

    Forget, S; Balembois, F; Georges, P; Landru, N; Feve, J P; Lin, J; Weng, Z; Forget, Sebastien; Druon, Frederic; Balembois, Francois; Georges, Patrick; Landru, Nicolas; Feve, Jean Philippe; Lin, Jiali; Weng, Zhiming

    2006-01-01

    the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr4+:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr4+:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

  2. Monolithic white light emitting diodes using a (Ga,In)N-based light converter

    Science.gov (United States)

    Damilano, Benjamin; Lekhal, Kaddour; Kim-Chauveau, Hyonju; Hussain, Sakhawat; Frayssinet, Eric; Brault, Julien; Chenot, Sébastien; Vennéguès, Philippe; De Mierry, Philippe; Massies, Jean

    2014-03-01

    Commercially available inorganic white light emitting diodes (LEDs) are essentially based on the combination of a blue InGaN based LED chip covered by a long wavelength emitting (yellow, red) phosphor. We propose to avoid this step of phosphor deposition by taking advantage of the fact that yellow to red emission can be achieved using InGaN alloys. By stacking an InGaN/GaN multiple quantum well (QW) emitting in the yellow, acting as a light converter, and a short wavelength blue-violet pump LED grown on top, white light emission can be obtained. Furthermore, if we extend the emission spectrum of the light converter into the red, a warm white light color is demonstrated when a pump LED is grown on top. However, the high In content InGaN QWs of the light converter have a low thermal stability and the QW efficiency tends to degrade during the growth of the pump LED. Three different solutions are explored to avoid the thermal degradation of the light converter. The monolithic LED structures were grown by molecular beam epitaxy (MBE), by a combination of both MBE and metal-organic chemical vapor phase epitaxy (MOCVD), or by a low temperature full-MOCVD process. The best results are obtained using a complete MOCVD growth process. The structure and the MOCVD growth conditions are specifically adapted in order to avoid the thermal degradation of the large In composition InGaN QWs emitting at long wavelength during the growth of the subsequent layers.

  3. Red emitting monolithic dual wavelength DBR diode lasers for shifted excitation Raman difference spectroscopy

    Science.gov (United States)

    Sumpf, B.; Maiwald, M.; Müller, A.; Bugge, F.; Fricke, J.; Ressel, P.; Pohl, J.; Erbert, G.; Tränkle, G.

    2014-02-01

    Raman lines are often obscured by background light or fluorescence especially when investigating biological samples or samples containing impurities. Shifted excitation Raman difference spectroscopy (SERDS) is a technique to overcome this. By exciting the sample with two slightly shifted wavelengths, it is possible to separate the Raman lines and distortions. In this paper, monolithic dual wavelength DBR diode lasers meeting the demands of Raman spectroscopy and SERDS will be presented. The wavelengths are stabilized and selected by using deeply-etched 10th order surface gratings with different periods manufactured using i-line wafer stepper lithography. Two possible resonator concepts, i.e. a mini-array of two parallel DBR RW-lasers and a Y-branch DBR laser, will be compared. Established excitation wavelengths for Raman spectroscopy at 671 nm and 785 nm are chosen. The total laser length is 3 mm; the ridge width is 2.2 μm for the 785 nm devices and 5 μm for the 671 nm lasers. The length of the DBR gratings is 500 μm. The devices at 671 nm reach output powers up to 100 mW having an emission width smaller than 12 pm (FWHM). The 785 nm lasers show output powers up to 200 mW and a narrow emission below 22 pm. For the dual wavelength lasers the spectral distance between the two excitation lines is about 0.5 nm as targeted. The power consumption at both wavelengths is below 1 W. These data proof that the devices are well suited for their application in portable Raman measurement systems such as handheld devices using SERDS.

  4. Monolithic Y-branch dual wavelength DBR diode laser at 671nm for shifted excitation Raman difference spectroscopy

    Science.gov (United States)

    Maiwald, M.; Fricke, J.; Ginolas, A.; Pohl, J.; Sumpf, B.; Erbert, G.; Tränkle, G.

    2013-05-01

    A dual-wavelength laser diode source suitable for shifted excitation Raman difference spectroscopy (SERDS) is presented. This monolithic device contains two ridge waveguide (RW) sections with wavelengths adjusted distributed Bragg reflection (DBR) gratings as rear side mirrors. An integrated Y-branch coupler guides the emission into a common output aperture. The two wavelengths are centered at 671 nm with a well-defined spectral spacing of about 0.5 nm, i.e. 10 cm-1. Separate RW sections can be individually addressed by injection current. An output power up to 110 mW was achieved. Raman experiments demonstrate the suitability of these devices for SERDS.

  5. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  6. Sensitive pre-amplifier to load for Pin diodes; Pre-amplificador sensible a carga para diodos PIN

    Energy Technology Data Exchange (ETDEWEB)

    Jacobo V, R. Y.; Hernandez D, V. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98060 Zacatecas (Mexico); Ramirez J, F. J., E-mail: yoshimarv@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2013-10-15

    The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer.

  7. Comprehensive physics-based compact model for fast p-i-n diode using MATLAB and Simulink

    Science.gov (United States)

    Xue, Peng; Fu, Guicui; Zhang, Dong

    2016-07-01

    In this study, a physics-based model for the fast p-i-n diode is proposed. The model is based on the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. The physical characteristics of fast diode design concepts such as local lifetime control (LLC), emitter control (EMCON) and deep field stop are taken into account. Based on these fast diode design concepts, the ADE is solved for all injection levels instead of high-level injection only as usually done. The variation of high-level lifetime due to local lifetime control is also included in the solution. With the deep field stop layer taken into consideration, the depletion behavior in the N-base during reverse recovery is redescribed. Some physical effects such as avalanche generation and carrier recombination in the depletion region are also taken into account. To be self contained, a parameter extraction method is proposed to extract all the parameters of the model. In the end, the static and reverse recovery experiments for a commercial EMCON diode and a LLC diode are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.

  8. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

    Science.gov (United States)

    Tanaka, Atsushi; Matsuhata, Hirofumi; Kawabata, Naoyuki; Mori, Daisuke; Inoue, Kei; Ryo, Mina; Fujimoto, Takumi; Tawara, Takeshi; Miyazato, Masaki; Miyajima, Masaaki; Fukuda, Kenji; Ohtsuki, Akihiro; Kato, Tomohisa; Tsuchida, Hidekazu; Yonezawa, Yoshiyuki; Kimoto, Tsunenobu

    2016-03-01

    The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very short portions of basal plane dislocations lower than the conversion points to threading edge dislocations in the epitaxial layer. The growth behavior of Shockley type stacking faults was discussed. Growth of stacking faults in the substrates was not observed.

  9. Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

    OpenAIRE

    2015-01-01

    The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy...

  10. One-Watt level mid-IR output, singly resonant, continuous-wave optical parametric oscillator pumped by a monolithic diode laser

    NARCIS (Netherlands)

    Nieuwenhuis, Albert F.; Lee, Christopher James; Sumpf, Bernd; van der Slot, Petrus J.M.; Erbert, Götz; Boller, Klaus J.

    2010-01-01

    We report more than 1.1 Watt of idler power at 3373 nm in a singly resonant optical parametric oscillator (SRO), directly pumped by a single-frequency monolithic tapered diode laser. The SRO is based on a periodically poled MgO:LiNbO3 crystal in a four mirror cavity and is excited by 8.05 W of 1062

  11. Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution,

  12. Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

    Science.gov (United States)

    Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

    2017-07-01

    Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

  13. Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

    Science.gov (United States)

    Hou, Lianping; Wang, Wei; Zhu, Hongliang; Zhou, Fan; Wang, Lufeng; Bian, Jing

    2005-08-01

    We have demonstrated a 1.60 µm ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3° × 10.6°, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

  14. 3.1 kW monolithic MOPA configuration fibre laser bidirectionally pumped by non-wavelength-stabilized laser diodes

    Science.gov (United States)

    Yan, Ping; Huang, Yusheng; Sun, Junyi; Li, Dan; Wang, Xuejiao; Gong, Mali; Xiao, Qirong

    2017-08-01

    We report an all-fibre monolithic master oscillator power amplifier configuration fibre laser bidirectionally pumped by non-wavelength-stabilized laser diodes. The Raman Effect and thermal problems can be effectively suppressed by the bidirectional pumping configuration. A small core diameter double-clad ytterbium-doped fibre is utilized in the amplifier for a refined beam quality control. As a result, a maximum output power of 3122 W and an optical-to-optical efficiency of 81.4% are achieved with near-diffraction-limitation beam quality. No mode instability was detected via a photodiode. Also, the output power instability was measured to be less than 0.6% during a continuous operation of 2 h.

  15. Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

    Science.gov (United States)

    Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

    1988-01-01

    56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

  16. Large-signal PIN diode model for ultra-fast photodetectors

    DEFF Research Database (Denmark)

    Krozer, Viktor; Fritsche, C

    2005-01-01

    A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice...

  17. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs.

  18. Readout Device of the PbWO4 Crystal Detector and R&D of the PIN Photo-diode

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CERN/ALICE is an experiment at the Large Hadron Collider optimized or the study of heavy-ion collisions at a center-of-mass energy ≈5.5 TeV. The aim of the experiment is to study in detail the behaviour of matter at high densities and temperatures, QGP, in view of proving de-confinement and chiral-symmetry restoration. ALICE/PHOS-China group joins the design, construct, test and setup of PHOS devoted to the study of photon signals. PHOS(photon spectrometer) is an electromagnetic calorimeter consisting of 17 920 detection channels of PbWO4, of 2.2 cm × 2.2 cm × 18 cm dimensions, coupled to large-area PIN diodes with low-noise preamplifiers. The first task is R&D of readout device

  19. Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

    Energy Technology Data Exchange (ETDEWEB)

    Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc, E-mail: jean-luc.pelouard@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); Haïdar, Riad [ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France); École Polytechnique, Département de Physique, F-91128 Palaiseau (France)

    2014-07-07

    Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

  20. MeV-SIMS yield measurements using a Si-PIN diode as a primary ion current counter

    Energy Technology Data Exchange (ETDEWEB)

    Stoytschew, Valentin; Bogdanović Radović, Iva [Ruđer Bošković Institute, Zagreb (Croatia); Demarche, Julien [University of Surrey, Surrey (United Kingdom); Jakšić, Milko [Ruđer Bošković Institute, Zagreb (Croatia); Matjačić, Lidija [University of Surrey, Surrey (United Kingdom); Siketić, Zdravko [Ruđer Bošković Institute, Zagreb (Croatia); Webb, Roger [University of Surrey, Surrey (United Kingdom)

    2016-03-15

    Megaelectronvolt-Secondary Ion Mass Spectrometry (MeV-SIMS) is an emerging Ion Beam Analysis technique for molecular speciation and submicron imaging. Various setups have been constructed in the recent years. Still a systematic investigation on the dependence of MeV-SIMS yields on different ion beam parameters is missing. A reliable measurement method of the beam current down to the attoampere range is needed for this investigation. Therefore, a new detector has been added to the MeV-SIMS setup at the Ruđer Bošković Institute (RBI), which measures the current directly using a Si PIN-diode. In this work, we present the constructed system, its characteristics, and results of the first yield measurements. These measurements have already identified important factors that have to be considered while constructing a MeV SIMS setup.

  1. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Science.gov (United States)

    Savanier, Marc; Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-01

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  2. Amplitude to phase conversion of InGaAs pin photo-diodes for femtosecond lasers microwave signal generation

    CERN Document Server

    Zhang, W; Lours, M; Seidelin, S; Santarelli, G; Coq, Y Le

    2011-01-01

    When a photo-diode is illuminated by a pulse train from a femtosecond laser, it generates microwaves components at the harmonics of the repetition rate within its bandwidth. The phase of these components (relative to the optical pulse train) is known to be dependent on the optical energy per pulse. We present an experimental study of this dependence in InGaAs pin photo-diodes illuminated with ultra-short pulses generated by an Erbium-doped fiber based femtosecond laser. The energy to phase dependence is measured over a large range of impinging pulse energies near and above saturation for two typical detectors, commonly used in optical frequency metrology with femtosecond laser based optical frequency combs. When scanning the optical pulse energy, the coefficient which relates phase variations to energy variations is found to alternate between positive and negative values, with many (for high harmonics of the repetition rate) vanishing points. By operating the system near one of these vanishing points, the typ...

  3. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  4. Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode

    DEFF Research Database (Denmark)

    Ou, Yiyu; Corell, Dennis Dan; Dam-Hansen, Carsten

    2011-01-01

    simulation results show that a moth-eye structure enhances the light extraction efficiency over the entire visible light range with an extraction efficiency enhancement of up to 26 %. Also for the first time to our best knowledge, the influence of sub-wavelength structures on both the color rendering index......We have theoretically investigated the influence of antireflective sub-wavelength structures on a monolithic white light-emitting diode (LED). The simulation is based on the rigorous coupled wave analysis (RCWA) algorithm, and both cylinder and moth-eye structures have been studied in the work. Our...... (CRI) and the correlated color temperature (CCT) of the monolithic white LED have been demonstrated. The CRI of the monolithic white LED could be improved from 92.68 to around 94 by applying a cylinder structure, and the CCT could be modified in a very large range with appropriate design...

  5. GaAs Schottky versus p/i/n diodes for pixellated X-ray detectors

    CERN Document Server

    Bourgoin, J C

    2002-01-01

    We discuss the performances of GaAs p/i/n structures and Schottky barriers for application as photodetectors for high-energy photons. We compare the magnitude of the leakage current and the width of the depleted region for a given reverse bias. We mention the effect of states present at the metal-semiconductor interface on the extension of the space charge region in Schottky barriers. We illustrate this effect by a description of the capacitance behaviour of a Au-GaAs barrier under gamma irradiation.

  6. GeSn pin diodes: from pure Ge to direct-gap materials

    Science.gov (United States)

    Gallagher, James; Senaratne, Charutha; Xu, Chi; Aoki, Toshihiro; Kouvetakis, John; Menendez, Jose

    2015-03-01

    Complete n - i - p Ge1-ySny diode structures (y =0-0.09) were fabricated on Si substrates with Sn concentrations covering the entire range between pure Ge and direct-gap materials. The structures typically consist of a thick (>1 μm) n + + Ge buffer layer grown by Gas Source Molecular Epitaxy using Ge4H10 and either P(SiH3)3 or P(GeH3)3 , followed by a GeSn intrinsic layer (~ 500 nm), grown by Chemical Vapor Deposition (CVD) using Ge3H8 and SnD4, and a GeSn p-type top layer (~ 200 nm) grown by CVD using Ge3H8,SnD4andB2H6. Temperature-dependence of the I - V characteristics of these diodes as well as the forward-bias dependence of their electroluminescence (EL) signal were investigated, making it possible for the first time to extract the compositional dependence of parameters such as band gaps, activation energies, and dark currents. The EL spectra are dominated by direct-gap emission, which shifts from 1590 nm to 2300 nm, in agreement with photoluminescence results. DOD AFOSR FA9550-12-1-0208 and DOD AFOSR FA9550-13-1-0022.

  7. Rayleigh length dependent SHG conversion at 488nm using a monolithic DBR tapered diode laser

    Science.gov (United States)

    Blume, G.; Uebernickel, M.; Fiebig, C.; Paschke, K.; Ginolas, A.; Eppich, B.; Güther, R.; Erbert, G.

    2008-02-01

    We present a study of the single pass SHG conversion as a function of the Rayleigh length (RL) and beam diameter (BD) using a monolithic distributed Bragg reflector (DBR) tapered laser. The DBR tapered laser has a 6th order surface grating and a ridge waveguide. Single longitudinal mode emission at 978nm with a side-mode suppression ratio of more than 40dB and at an output power of 2.7W at 15°C have been obtained in continuous wave operation. The beam was collimated using an aspheric and a cylindrical lens and focused using a variety of lenses with various focal lengths. The resulting caustics were acquired using a camera and used for SHG in a 5cm periodically poled LiNbO 3 (PPLN) crystal. This allowed an investigation of the dependency of the SHG conversion efficiency on the RLs and BDs. We obtained 330mW of output power at 488nm using the optimal focus length. The experiments showed that an optimum conversion requires longer focal length's then forecasted by Boyd-Kleinman's theory, which is explained due to the partial coherence. We developed an extension of that theory to account for that partial coherence, which bases in principle on a mismatch related general Agrawal's nonlinear integration kernel. We use this theory to explain the dependence of the SHG efficiency from the beam propagation factor M2.

  8. 固态等离子体S-PIN二极管仿真设计%Simulation of Solid State Plasma S-PIN Diode

    Institute of Scientific and Technical Information of China (English)

    李威; 曾繁辉; 张彤

    2014-01-01

    Simulation S-PIN diodes is set up based on semiconductor theory, in order to get the carrier concentration,mobility ratio and optimized structure of diode,in which carrier concentration induced by forward bias on the surface of diodes reaches 1018 cm-3 . This high carrier concentration phenomenon so called solid state plasma phenomena,results in metal-like features of S-PIN diodes. Then the S-PIN diodes array is simulated,in order to confirm metal-like area,which can be used in RF antenna instead of metal.%介绍固态等离子体器件S-PIN二极管的仿真。在半导体理论的基础上建立S-PIN二极管的物理模型,利用软件对S-PIN二极管结构进行仿真计算,研究固态等离子体载流子浓度、载流子迁移率等参数性质,计算出二极管导通状态下的电导率。对二极管结构进行优化设计,使二极管导通情况下载流子浓度能够达到1018 cm-3,导电性能类似金属。这种高密度载流子聚集的现象被称为固态等离子体现象。仿真设计并排级联的S-PIN二极管阵列,得到类似金属导电性的连续固态等离子体区域,能够取代金属材料制备射频微波天线。

  9. Dead layer on silicon p-i-n diode charged-particle detectors

    CERN Document Server

    Wall, B L; Beglarian, A; Bergmann, T; Bichsel, H C; Bodine, L I; Boyd, N M; Burritt, T H; Chaoui, Z; Corona, T J; Doeg, P J; Enomoto, S; Harms, F; Harper, G C; Howe, M A; Martin, E L; Parno, D S; Peterson, D A; Petzold, L; Renschler, P; Robertson, R G H; Schwarz, J; Steidl, M; Van Wechel, T D; VanDevender, B A; Wüstling, S; Wierman, K J; Wilkerson, J F

    2013-01-01

    Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \\textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer fr...

  10. Modeling research of flexible single crystal germanium PIN diode under off state%柔性单晶锗 PIN 二极管在关态下的建模研究

    Institute of Scientific and Technical Information of China (English)

    王飞; 秦国轩

    2016-01-01

    This letter presents the fabrication method of flexible single-crystalline germanium nanomembrane (GeNM ) p-intrinsic-n (PIN ) diodes on plastic substrate and radio frequency (rf ) characterization under off state of various bending strains .In order to quantitatively research the RF characteristic variations with different mechanical stress applied on the flexible PIN diode under reverse mode ,accurate equivalent circuit models were set up under different bending radius .After researching the model parameters of the diode varying with the mechanical stress ,it can be obtained internal resistance ,parasitic inductance ,p+ p-junction resistor and p-n+ junction capacitance are the main factors affecting the rf characteristics .Mechanical bending makes these parameters change monotonously ,which results the rf characteristics of flexible single-crystal germanium PIN diode getting better under the off state .It also shows great potential in the strain measurement field .%介绍了柔性单晶锗纳米薄膜(GeNM )PIN 二极管的制备方法和反向偏置下对应不同弯曲状态下的射频特性。为了定量研究在反向偏置下机械弯曲对柔性PIN二极管射频特性的影响,分别搭建了不同弯曲半径下的等效电路模型。通过研究不同机械应力作用下模型中的各个参数的变化得到二极管内部电阻,寄生电感,p+ p-结的电阻以及p-n+结的电容为影响其射频特性的主要因素,机械弯曲使这些参数值单调变化,导致柔性单晶锗PIN二极管关态下的射频特性变好。这在应变测量领域显示出很大的发展应用潜力。

  11. Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

    Science.gov (United States)

    Nihei, Shinichi; Sato, Eiichi; Hamaya, Tatsuki; Numahata, Wataru; Kogita, Hayato; Kami, Syouta; Arakawa, Yumeka; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

    2014-12-01

    To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current-voltage (I-V) amplifier, a voltage-voltage (V-V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I-V and V-V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu2(SiO4)O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)-Si-PIN, and an LSO-Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)-Si-PIN and the LSO-Si-PIN at the measurement conditions.

  12. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    Science.gov (United States)

    Sirkeli, Vadim P.; Yilmazoglu, Oktay; Al-Daffaie, Shihab; Oprea, Ion; Ong, Duu Sheng; Küppers, Franko; Hartnagel, Hans L.

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm‑2. It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm‑2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier.

  13. Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2017-08-01

    Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

  14. GaAs PIN二极管的新等效电路模型%A Novel Equivalent Circuit Model of GaAs PIN Diodes

    Institute of Scientific and Technical Information of China (English)

    吴茹菲; 张海英; 尹军舰; 李潇; 刘会东; 刘训春

    2008-01-01

    A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts., the p+ n- junction, the I-layer, and the n- n+ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model's accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model, fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.%基于物理原理的分析,提出了GaAs PIN二极管的一种新等效电路模型.GaAs PIN二极管被分成P+n-结、基区和n-n+结三部分分别建模,总的模型由三个子模型组成,从而极大地提高了模型的准确性.相应的模型参数提取过程不要求苛刻的实验或测试条件,简便易操作.研制了15组GaAs PIN二极管来验证模型,测试结果表明模型准确地反映了GaAs PIN二极管的正向和反向特性.

  15. Monolithic microchannel heatsink

    Science.gov (United States)

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  16. Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

    Science.gov (United States)

    Tawara, T.; Miyazawa, T.; Ryo, M.; Miyazato, M.; Fujimoto, T.; Takenaka, K.; Matsunaga, S.; Miyajima, M.; Otsuki, A.; Yonezawa, Y.; Kato, T.; Okumura, H.; Kimoto, T.; Tsuchida, H.

    2016-09-01

    We investigated the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers. The minority carrier lifetimes greatly shortened when the nitrogen concentration exceeded 1018 cm-3 through enhancing direct band-to-band and Auger recombination and showed a slight variation in the temperature range from room temperature (RT) to 250 °C. The epilayer with a nitrogen concentration of 9.3 × 1018 cm-3 exhibited a very short minority carrier lifetime of 38 ns at RT and 43 ns at 250 °C. The short minority carrier lifetimes of the highly nitrogen-doped epilayer were confirmed to maintain the values even after the subsequent annealing of 1700 °C. 4H-SiC PiN diodes were fabricated by depositing a highly nitrogen-doped epilayer as a "recombination enhancing layer" between an n- drift layer free from basal plane dislocations and the substrate. The PiN diodes showed no formation of stacking faults and no increase in forward voltage during current conduction of 600 A/cm2 (DC), demonstrating that a highly nitrogen-doped buffer layer with a short minority carrier lifetime successfully suppresses the "bipolar degradation" phenomenon.

  17. Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Nihei, Shinichi [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Sato, Eiichi, E-mail: dresato@iwate-med.ac.jp [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Hamaya, Tatsuki; Numahata, Wataru; Kogita, Hayato; Kami, Syouta; Arakawa, Yumeka; Oda, Yasuyuki [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya [Department of Surgery, Toho University Ohashi Medical Center, 2-17-6 Ohashi, Meguro, Tokyo 153-8515 (Japan)

    2014-12-11

    To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current–voltage (I–V) amplifier, a voltage–voltage (V–V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I–V and V–V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu{sub 2}(SiO{sub 4})O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)–Si-PIN, and an LSO–Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)–Si-PIN and the LSO–Si-PIN at the measurement conditions. - Highlights: • X-ray detecting module was developed to measure relative sensitivities of detectors. • Event-pulse-height spectra were measured to analyze X-ray-electric conversion effect. • Total photon number substantially decreased using scintillation detectors. • Scintillation effects using YAP(Ce) and LSO were quite low. • Si-PIN sensitivity without scintillators was quite high.

  18. Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

    Science.gov (United States)

    Damilano, Benjamin; Kim-Chauveau, Hyonju; Frayssinet, Eric; Brault, Julien; Hussain, Sakhawat; Lekhal, Kaddour; Vennéguès, Philippe; De Mierry, Philippe; Massies, Jean

    2013-09-01

    Monolithic InGaN-based light-emitting diodes (LEDs) using a light converter fully grown by metal organic vapor phase epitaxy are demonstrated. The light converter, consisting of 10-40 InGaN/GaN quantum wells, is grown first, followed by a violet pump LED. The structure and growth conditions of the pump LED are specifically adapted to avoid thermal degradation of the light converter. Electroluminescence analysis shows that part of the pump light is absorbed by the light converter and reemitted at longer wavelength. Depending on the emission wavelength of the light converter, different LED colors are achieved. In particular, for red-emitting light converters, a color temperature of 2100 K corresponding to a tint between warm white and candle light is demonstrated.

  19. Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhaojun; Ma, Jun; Huang, Tongde; Liu, Chao; May Lau, Kei, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-03-03

    In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

  20. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

    Science.gov (United States)

    Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

    2016-08-01

    In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

  1. Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry

    Science.gov (United States)

    Drozdov, M. N.; Drozdov, Yu. N.; Yunin, P. A.; Folomin, P. I.; Gritsenko, A. B.; Kryukov, V. L.; Kryukov, E. V.

    2016-08-01

    A new opportunity to analyze the atomic composition of thick (>100 μm) epitaxial GaAs layers by SIMS with lateral imaging of the cross section of a structure is demonstrated. The standard geometry of ldepth analysis turns out to be less informative owing to material redeposition from the walls of a crater to its floor occurring when the crater depth reaches several micrometers. The profiles of concentration of doping impurities Te and Zn and concentrations of Al and major impurities in PIN diode layers are determined down to a depth of 130 μm. The element sensitivity is at the level of 1016 at/cm3 (typical for depth analysis at a TOF.SIMS-5 setup), and the resolution is twice the diameter of the probing beam of Bi ions. The possibility of enhancing the depth resolution and the element sensitivity of the proposed analysis method is discussed.

  2. Electron Temperature Measurement Using PIN Diodes as Detectors to Record the X-ray Pulses from a Low-Energy Mather-Type Plasma Focus

    Institute of Scientific and Technical Information of China (English)

    M. Asif; Amna Ikram

    2004-01-01

    In the experiment to determine the plasma electron temperature, a modified multichannel PIN diodes assembly is used as detectors to record the X-ray pulses from a low-energy Mather-type plasma focus device energized by a 32μF, 15 kV (3.6 k J) single capacitor, with deuterium as a filling gas. The ratio of the integrated bremsstrahlung emission transmitting through foils to the total incident flux as a function of foil thickness at various temperatures is obtained for foil absorbers of material. Using 3μm, 6μm, 9μm,12μm,15μm and 18μm thick aluminium absorbers, the transmitted X-ray flux is detected. By comparing the experimental and theoretical curves through a computer program, the plasma electron temperature is determined. Results show that the deuterium focus plasma electron temperature is about 800 eV.

  3. Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode

    Science.gov (United States)

    Park, Junbo; Park, Kun-Sik; Won, Jong-il; Kim, Ki-hwan; Koo, Sangmo; Kim, Sang-gi; Mun, Jae-Kyoung

    2017-04-01

    We present numerical simulation results and experimental measurements that explain the physical mechanism behind the high critical voltage, Vcrit, required to turn on a pn junction in a merged PiN Schottky (MPS) diode. The 2D simulation of potential distribution within a unit MPS cell demonstrated that the potential gradient set by the Schottky junction raises the potential barrier formed at the pn junction, thereby increasing Vcrit. Based on this knowledge, we propose that changing the ratio of the Schottky contact and the p+ region area, as well as shallow p-doping of the Schottky interface, can be used to control the magnitude of Vcrit. We present simulation and measurement results that demonstrate the feasibility of our approach.

  4. Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodes

    Science.gov (United States)

    Ng, Beng K.; David, John P. R.; Tan, Chee H.; Plimmer, S. A.; Rees, Graham J.; Tozer, Richard C.; Hopkinson, Mark

    2001-06-01

    The avalanche multiplication noise characteristics of AlxGa1-xAs (x equals 0-0.8) have been measured in a wide range of PIN and NIP diodes. The study includes determining the effect of the alloy fraction, x, as it varies from 0 to 0.8 while the effect of the avalanche width, w, is investigated by varying it from 1 micrometers down to 0.05 micrometers . For x equals 0-0.6, the ratio of the electron to hole ionization coefficients, 1/k, decreases from 3 (for x equals 0) to 1 (for x equals 0.6), leading to higher noise in a local prediction as x increases. Measurements for x equals 0-0.6 in nominally 1um thick diodes indicates that the excess noise factor can be approximately predicted by the local model. However, as the avalanche width reduces, a lower than expected noise factor was measured. This behaviour is associated with the effect of deadspace, whereby carriers have insufficient energy to initiate ionization for a significant region of the device. The presence of deadspace leads to a more deterministic process, which acts to reduce excess noise. For x equals 0.8 however, its 1/k value is surprisingly high in a bulk structure, leading to noise performance that is primarily determined by the 1/k value and is comparable to that of silicon. Similar to the results of thin AlxGa1-xAs (x equals 0-0.6) diodes, thinner Al0.8Ga0.2As structures exhibit excess noise factor that is significantly reduced by the nonlocal deadspace effects.

  5. Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy

    Science.gov (United States)

    Sasaki, Tatsuya; Yamaguchi, Masayuki; Kitamura, Mitsuhiro

    1994-12-01

    Selective metalorganic vapor phase epitaxy (MOVPE) was used to grow InGaAsP/InP layers for fabricating multi-wavelength laser diodes. Multiple quantum well (MQW) active and passive waveguides were simultaneously grown by one step selective growth. The selectively grown layer thickness increases with the mask stripe width. This growth enhancement can be used to control the lasing wavelength of distributed Bragg reflector (DBR) laser diodes, because the effective refractive index of the MQW passive waveguide at the DBR region can be controlled by the mask stripe width. This simple technique was used to fabricate multi-wavelength MQW-DBR laser diodes. In the selective growth, the MQW structure was grown under 150 Torr to obtain large bandgap energy shift for the MQW passive waveguides compared to the active waveguide, which was effective for wide wavelength tuning range. On the contrary, a bulk InGaAsP guide layer was grown under 35 Torr to prevent too much composition shift and maintain high crystalline quality of the MQW passive waveguide. For 10 consecutive laser diodes, a wavelength span of over 20 nm with accurate wavelength control was achieved.

  6. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

    KAUST Repository

    Zhao, Chao

    2016-07-28

    A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

  7. 5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

    Science.gov (United States)

    Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

    2014-01-01

    Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced

  8. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  9. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Science.gov (United States)

    Hazari, Arnab; Aiello, Anthony; Ng, Tien-Khee; Ooi, Boon S.; Bhattacharya, Pallab

    2015-11-01

    III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ˜3 × 1010 cm-2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10-17 cm2, respectively. The peak emission is observed at ˜1.2 μm.

  10. Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes.

    Science.gov (United States)

    Gallivanoni, A; Rech, I; Resnati, D; Ghioni, M; Cova, S

    2006-06-12

    A new integrated active quenching circuit (i-AQC) designed in a standard CMOS process is presented, capable of operating with any available single photon avalanche diode (SPAD) over wide temperature range. The circuit is suitable for attaining high photon timing resolution also with wide-area SPADs. The new i-AQC integrates the basic active-quenching loop, a patented low-side timing circuit comprising a fast pulse pick-up scheme that substantially improves time-jitter performance, and a novel active-load passive quenching mechanism (consisting of a current mirror rather than a traditional high-value resistor) greatly improves the maximum counting rate. The circuit is also suitable for portable instruments, miniaturized detector modules and SPAD-array detectors. The overall features of the circuit may open the way to new developments in diversified applications of time-correlated photon counting in life sciences and material sciences.

  11. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array%应用于大功率激光二极管列阵的单片集成微通道制冷热沉

    Institute of Scientific and Technical Information of China (English)

    马杰慧; 方高瞻; 蓝永生; 马骁宇

    2005-01-01

    介绍了一种应用于大功率激光二极管列阵的新型单片集成微通道制冷热沉.这种热沉已制造并经过测试.10叠层的激光二极管列阵的热阻为0.121℃/W.相邻两个激光条的间距是1.17mm.在20%高占空比条件下,波长为808nm左右,峰值功率可以达到611W.%A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.

  12. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  13. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    OpenAIRE

    Yu Kee Ooi; Jing Zhang

    2015-01-01

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity c...

  14. A Ferrite LTCC-Based Monolithic SIW Phased Antenna Array

    KAUST Repository

    Nafe, Ahmed

    2016-11-17

    In this work, we present a novel configuration for realizing monolithic SIW-based phased antenna arrays using Ferrite LTCC technology. Unlike the current common schemes for realizing SIW phased arrays that rely on surface-mount component (p-i-n diodes, etc) for controlling the phase of the individual antenna elements, here the phase is tuned by biasing of the ferrite filling of the SIW. This approach eliminates the need for mounting of any additional RF components and enables seamless monolithic integration of phase shifters and antennas in SIW technology. As a proof of concept, a two-element slotted SIW-based phased array is designed, fabricated and measured. The prototype exhibits a gain of 4.9 dBi at 13.2 GHz and a maximum E-plane beam-scanning of 28 degrees using external windings for biasing the phase shifters. Moreover, the array can achieve a maximum beam-scanning of 19 degrees when biased with small windings that are embedded in the package. This demonstration marks the first time a fully monolithic SIW-based phased array is realized in Ferrite LTCC technology and paves the way for future larger-size implementations.

  15. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Directory of Open Access Journals (Sweden)

    Yu Kee Ooi

    2015-05-01

    Full Text Available Phosphor-free monolithic white light emitting diodes (LEDs based on InGaN/ InGaN multiple quantum wells (MQWs on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW and high external quantum efficiency (EQE (∼ 50%. The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28 with correlated color temperature (CCT of ∼ 8200 K at J = 50 A/cm2. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  16. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu [Department of Electrical and Microelectronics Engineering, Rochester Institute of Technology, Rochester, New York 14623 (United States)

    2015-05-15

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  17. Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

    Science.gov (United States)

    Ooi, Yu Kee; Zhang, Jing

    2015-05-01

    Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (˜ 170 mW) and high external quantum efficiency (EQE) (˜ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ˜ 8200 K at J = 50 A/cm2. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

  18. Simulación Estática y Dinámica de un Modelo Físico del Diodo PiN en Carburo de Silicio Static and dynamic simulation of a Physically-Based Model of Silicon Carbide PiN Diode

    Directory of Open Access Journals (Sweden)

    Leobardo Hernández

    2010-01-01

    Full Text Available Este artículo presenta una propuesta de modelado y simulación del diodo PiN en Carburo de Silicio. La propuesta principal de modelado soluciona la ecuación de difusión ambipolar a partir de una aproximación empírica. Mediante la metodología utilizada se obtiene un conjunto de ecuaciones diferenciales que modelan los principales fenómenos físicos asociados al dispositivo semiconductor de potencia. Las ecuaciones implementadas en Pspice modelan en una forma más real el comportamiento de la dinámica de cargas en la región N- de un diodo PiN en Carburo de Silicio para las fases estáticas y dinámicas. Para la comprobación y validación del modelo desarrollado, se compararon los resultados de simulación con datos experimentales reportados en la literatura, obteniéndose resultados adecuados para aplicaciones de electrónica de potencia.This paper presents a method to solve the ambipolar diffusion equation for modeling and simulating the PiN diode in silicon carbide, using an empirical approximation. Through this methodology a set of differential equations that simúlate the main physical phenomena associated to the power semiconductor device are obtained. The equations, implemented in Pspice, model in a more actual form the charges behaviour in the N- región of a PiN diode in silicon carbide for the static and dynamic phases. For the verification and validation of the model, the simulation results were compared with experimental data reported in the literature, obtaining aecurate results for application in power electronic.

  19. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Hsing; Meyer, Kristin De [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Verhulst, Anne S.; Rooyackers, Rita; Douhard, Bastien; Delmotte, Joris; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried; Simoen, Eddy; Hikavyy, Andriy; Loo, Roger; Arstila, Kai; Collaert, Nadine; Thean, Aaron; Heyns, Marc M. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

    2014-12-07

    Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined with a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.

  20. Monolithic spectrometer

    Science.gov (United States)

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  1. High Efficiency Wavelength Conversion of 40 Gbps Signals at 1550 nm in SOI Nano-Rib Waveguides Using p-i-n Diodes

    DEFF Research Database (Denmark)

    Gajda, Andrzej; Da Ros, Francesco; Vukovic, Dragana

    2013-01-01

    We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of −4.6 dB enables a conversion power penalty as low as 0.2 dB....

  2. Monolithic Integration of GaN-based LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Technology and Science, University of Tokushima 2-1 Minami-Josanjima, Tokushima 770-8506 (Japan)

    2011-02-01

    The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for high-voltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.

  3. Eigenpolarization theory of monolithic nonplanar ring oscillators

    Science.gov (United States)

    Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.

    1989-01-01

    Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.

  4. Design of a terahertz CW photomixer based on PIN and superlattice PIN devices

    DEFF Research Database (Denmark)

    Krozer, Viktor; Eichhorn, Finn

    2006-01-01

    We present the design of a photomixer LO based on standard and superlattice PIN diodes, operating at 1 THz. The design is based on a direct integration of a double slot antenna with the PIN device and a suitable matching circuit. The antenna has been designed together with a dielectric lens using...

  5. Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

    Energy Technology Data Exchange (ETDEWEB)

    Dierickx, B.; Wouters, D.; Willems, G.; Alaerts, A.; Debusschere, I.; Simoen, E.; Vlummens, J.; Akimoto, H.; Claeys, C.; Maes, H.; Hermans, L. (IMEC, Leuven (Belgium)); Heijne, E.H.M.; Jarron, P.; Anghinolfi, F.; Campbell, M.; Pengg, F.X.; Aspell, P. (CERM, Geneve (Switzerland)); Bosisio, L.; Focardi, E.; Forti, F.; Kashigin, S. (INFN sezione di Pisa, Pisa (Italy)); Mekkaoui, A.; Habrard, M.C.; Sauvage, D. (CPPM, Marseille (France)); Delpierre, P. (Coll. de France/IN2P3-CNRS, Paris (France)); Detector R and D Collaboration

    1993-08-01

    A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 aA/cm[sup 2]. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors to suitable quality.

  6. Extraction of amphetamines and methylenedioxyamphetamines from urine using a monolithic silica disk-packed spin column and high-performance liquid chromatography-diode array detection.

    Science.gov (United States)

    Namera, Akira; Nakamoto, Akihiro; Nishida, Manami; Saito, Takeshi; Kishiyama, Izumi; Miyazaki, Shota; Yahata, Midori; Yashiki, Mikio; Nagao, Masataka

    2008-10-24

    To overcome the limitations of solid-phase extraction, we developed a device comprising a spin column packed with octadecyl silane-bonded monolithic silica for extracting amphetamines and methylenedioxyamphetamines from urine. Urine (0.5mL), buffer (0.4mL), and methoxyphenamine (internal standard) were directly put into the preactivated column. The column was centrifuged (3000rpm, 5min) for sample loading and washed. The adsorbed analytes were eluted and analyzed by high-performance liquid chromatography, without evaporation. The results were as follows: linear curves (drug concentrations of 0.2-20microg/mL); correlation coefficients >0.99; detection limit, 0.1microg/mL. The proposed method is not only useful for drugs from biological materials but also highly reproducible for the analysis of these drugs in urine.

  7. Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    Liu, Chao; Cai, Yuefei; Jiang, Huaxing; Lau, Kei May

    2016-04-01

    For the development of a metal-interconnection-free integration scheme for monolithic integration of InGaN/GaN light-emitting diodes (LEDs) and AlGaN/GaN high-electron-mobility transistors (HEMTs), a common buffer to achieve high brightness, low leakage current, and high breakdown in the integrated HEMT-LED device is essential. Different buffer structures have been investigated, and their impacts upon both the LED and HEMT parts of the HEMT-LED device have been analyzed. Results indicated that a GaN/AlN buffer structure is the most ideal to serve as a common buffer platform, offering both the excellent crystalline quality and superior buffer resistivity required by the HEMT-LED device. Growth of the AlN layer was particularly crucial for engineering the dislocation density, surface morphology, as well as resistivity of the buffer layer. Using the optimized GaN/AlN buffer structure, the LED part of the HEMT-LED device was improved, showing greatly enhanced light output power and suppressed reverse leakage current, while the breakdown characteristics of the HEMT part were also improved.

  8. Happy Pinning

    DEFF Research Database (Denmark)

    Fausing, Bent

    2012-01-01

    This is about Pinterest, but with a different approach than usual to social networks. Pinterest is an image site par excellence. The images are as Windows that open outwards and also lets us look inwards and displays the soul and heart, the unintentional or pre-conscious desires. Happy Pinning!...

  9. Happy Pinning

    DEFF Research Database (Denmark)

    Fausing, Bent

    2012-01-01

    This is about Pinterest, but with a different approach than usual to social networks. Pinterest is an image site par excellence. The images are as Windows that open outwards and also lets us look inwards and displays the soul and heart, the unintentional or pre-conscious desires. Happy Pinning!...

  10. A monolithically integrated detector-preamplifier on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/{radical}Hz in the white noise regime. Measurements with an Am{sup 241} radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm{sup 2} detector with on-chip amplifier in an experimental setup with substantial external pickup.

  11. Silicon Carbide Schottky Barrier Diode

    Science.gov (United States)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  12. Monolithically integrated optoelectronic down-converter (MIOD)

    Science.gov (United States)

    Portnoi, Efrim L.; Venus, G. B.; Khazan, A. A.; Gorfinkel, Vera B.; Kompa, Guenter; Avrutin, Evgenii A.; Thayne, Iain G.; Barrow, David A.; Marsh, John H.

    1995-06-01

    Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.

  13. Monoliths in Bioprocess Technology

    Directory of Open Access Journals (Sweden)

    Vignesh Rajamanickam

    2015-04-01

    Full Text Available Monolithic columns are a special type of chromatography column, which can be used for the purification of different biomolecules. They have become popular due to their high mass transfer properties and short purification times. Several articles have already discussed monolith manufacturing, as well as monolith characteristics. In contrast, this review focuses on the applied aspect of monoliths and discusses the most relevant biomolecules that can be successfully purified by them. We describe success stories for viruses, nucleic acids and proteins and compare them to conventional purification methods. Furthermore, the advantages of monolithic columns over particle-based resins, as well as the limitations of monoliths are discussed. With a compilation of commercially available monolithic columns, this review aims at serving as a ‘yellow pages’ for bioprocess engineers who face the challenge of purifying a certain biomolecule using monoliths.

  14. Monolithically integrated AlN/GaN electronics for harsh environments Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a...

  15. Computer Calculations of PIN Diode Limiter Characteristics.

    Science.gov (United States)

    1987-09-01

    LEANDRO, CA 94577 ATTN R. S. DINGUS ATTN - OBERT F. HOBERLING QUEST RESEARCH CORPORATION ATTN JEREMY A. LANDT ATTN ROBERT S. OHANESIAN ATTN FREDERICK A...NW-P ATTN DOCUMENT CONTROL, LB ATTN CHIEF, SLCHD-RT-AA 9191 TOWNE CENTRE DRIVE, SUITE 500 ATTN ZABLUDOWSKI, B., SLCHD-IT-EB (GIDEP) SAN DIEGO, CA

  16. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d' Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

    2014-06-09

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  17. Pin solar cells made of amorphous silicon

    Science.gov (United States)

    Plaettner, R. D.; Kruehler, W. W.

    Investigations leading to solar cells with a structure SnO2-pin and an efficiency up to 9.8% are reviewed. The production of large-surface metal/pin/transparent conductive oxide (TCO)-solar cells is discussed. A two-chamber reactor, grid structure and tinning of cells, and an a-Si-module are described. The production of glass/TCO/pin/metal-solar cells and a-SiGe:H-compounds is outlined. Measurements on solar cells and diodes including the efficiency of a-Si:H-solar cells, spectral sensitivity, diffusion lengths, field effect measurements, and modifications of solar cells (space-charge limited currents, reduction of solar cells aging) are treated.

  18. Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

    Science.gov (United States)

    Siegel, Peter; Schlecht, Erich; Mehdi, Imran; Gill, John; Velebir, James; Tsang, Raymond; Dengler, Robert; Lin, Robert

    2010-01-01

    This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows

  19. Pediatric safety pin ingestion.

    Science.gov (United States)

    Sarihan, H; Kaklikkaya, I; Ozcan, F

    1998-08-01

    Fifteen consecutive children with ingested safety pins were evaluated retrospectively. Eight patients were males and seven were girls. The mean age of the patients was 5.4 years ranging from 7 months to 16 years. Two of 15 patients were mentally retarded Seven safety pins ingestion were noted by parents, three older children applied with safety pin swallowing. Three infants referred with hypersalivation and swallowing difficulty. One of two mentally retarded patients had recurrent aspiration pneumonia, the other had neck abscess. These patients' lesions were detected incidentally by thoracic X-ray. Nine safety pins were at the level of the cricopharyngeus, one at the level of the aortic arch and five at the esophagogastric junction. A right esophagoscopy was used for extraction of safety pins under general anesthesia and endotracheal intubation were used. Before esophagoscopy control plain X-ray was obtained for location of safety pin. Nine safety pins were extracted by esophagoscopy. Three safety pins spontaneously and three during anesthesia induction passed through the esophagus falling down the stomach. Five of these six safety pins were spontaneously extracted without complication. However one open safety pin lodged at the duodenum and laparotomy was required. In this article, etiology and management of safety pin ingestion in children are discussed.

  20. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.;

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  1. PINS Spectrum Identification Guide

    Energy Technology Data Exchange (ETDEWEB)

    A.J. Caffrey

    2012-03-01

    The Portable Isotopic Neutron Spectroscopy—PINS, for short—system identifies the chemicals inside munitions and containers without opening them, a decided safety advantage if the fill chemical is a hazardous substance like a chemical warfare agent or an explosive. The PINS Spectrum Identification Guide is intended as a reference for technical professionals responsible for the interpretation of PINS gamma-ray spectra. The guide is divided into two parts. The three chapters that constitute Part I cover the science and technology of PINS. Neutron activation analysis is the focus of Chapter 1. Chapter 2 explores PINS hardware, software, and related operational issues. Gamma-ray spectral analysis basics are introduced in Chapter 3. The six chapters of Part II cover the identification of PINS spectra in detail. Like the PINS decision tree logic, these chapters are organized by chemical element: phosphorus-based chemicals, chlorine-based chemicals, etc. These descriptions of hazardous, toxic, and/or explosive chemicals conclude with a chapter on the identification of the inert chemicals, e.g. sand, used to fill practice munitions.

  2. Monolithic series-connected gallium arsenide converter development

    Energy Technology Data Exchange (ETDEWEB)

    Spitzer, M.B.; McClelland, R.W.; Dingle, B.D.; Dingle, J.E.; Hill, D.S. (Kopin Corp., Taunton, MA (United States)); Rose, B.H. (Sandia National Labs., Albuquerque, NM (United States))

    1991-01-01

    We report the development of monolithic GaAs photovoltaic devices intended to convert light generated by a laser or other bright source to electricity. The converters described here can provide higher operating voltage than is possible using a single-junction converter, owing to use of a monolithic circuit that forms a planar series-connected string of single-junction sub-cells. This planar monolithic circuit is arranged to deliver the desired voltage and current during operation at the maximum power point. The paper describes two-, six-, and twelve-junction converters intended for illumination by a laser diode with a wavelength of 0.8 {mu}m. Design and characterization data are presented for optical power in the range of 100 mW to 1 W. The best conversion efficiency exceeds 50%. 9 refs., 4 figs., 2 tabs.

  3. Flux pinning in superconductors

    CERN Document Server

    Matsushita, Teruo

    2014-01-01

    The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of supercondu...

  4. Flux Pinning in Superconductors

    CERN Document Server

    Matsushita, Teruo

    2007-01-01

    The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of supercondu...

  5. Monolithic microwave integrated circuits

    Science.gov (United States)

    Pucel, R. A.

    Monolithic microwave integrated circuits (MMICs), a new microwave technology which is expected to exert a profound influence on microwave circuit designs for future military systems as well as for the commercial and consumer markets, is discussed. The book contains an historical discussion followed by a comprehensive review presenting the current status in the field. The general topics of the volume are: design considerations, materials and processing considerations, monolithic circuit applications, and CAD, measurement, and packaging techniques. All phases of MMIC technology are covered, from design to testing.

  6. Embedded-monolith armor

    Science.gov (United States)

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  7. A Flux-Pinning Mechanism for Segment Assembly and Alignment

    Science.gov (United States)

    Gersh-Range, Jessica A.; Arnold, William R.; Peck, Mason A.; Stahl, H. Philip

    2011-01-01

    Currently, the most compelling astrophysics questions include how planets and the first stars formed and whether there are protostellar disks that contain large organic molecules. Although answering these questions requires space telescopes with apertures of at least 10 meters, such large primaries are challenging to construct by scaling up previous designs; the limited capacity of a launch vehicle bounds the maximum diameter of a monolithic primary, and beyond a certain size, deployable telescopes cannot fit in current launch vehicle fairings. One potential solution is connecting the primary mirror segments edgewise using flux-pinning mechanisms, which are analogous to non-contacting damped springs. In the baseline design, a flux-pinning mechanism consists of a magnet and a superconductor separated by a predetermined gap, with the damping adjusted by placing aluminum near the interface. Since flux pinning is possible only when the superconductor is cooled below a critical temperature, flux-pinning mechanisms are uniquely suited for cryogenic space telescopes. By placing these mechanisms along the edges of the mirror segments, a primary can be built up over time. Since flux pinning requires no mechanical deployments, the assembly process could be robotic or use some other non-contacting scheme. Advantages of this approach include scalability and passive stability.

  8. PINS-3X Operations

    Energy Technology Data Exchange (ETDEWEB)

    E.H. Seabury

    2013-09-01

    Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

  9. Diffusion inspires selection of pinning nodes in pinning control

    Science.gov (United States)

    Zhou, Ming-Yang; He, Xingsheng; Fu, Zhong-Qian; Liao, Hao; Cai, Shi-min; Zhuo, Zhao

    2016-03-01

    The outstanding problem of controlling a complex network via pinning is related to network dynamics and has the potential to master large-scale real-world systems as well. This paper addresses the heart issue about how to choose pinning nodes for pinning control, where pinning control aims to control a network to an identical state by injecting feedback control signals to a small fraction of nodes. We explore networks' controllability from not only mathematical analysis, but also the aspects of network topology and information diffusion. Then, the connection between pinning control and information diffusion is given, and pinning node selection is transferred into multi-spreader problem in information diffusion. Based on information diffusion, a heuristic method is proposed to select pinning nodes by optimizing the spreading ability of multiple spreaders. The proposed method greatly improves the controllability of large practical networks, and provides a new perspective to investigate pinning node selection.

  10. Pinning Down versus Density

    OpenAIRE

    2015-01-01

    The pinning down number $ {pd}(X)$ of a topological space $X$ is the smallest cardinal $\\kappa$ such that for any neighborhood assignment $U:X\\to \\tau_X$ there is a set $A\\in [X]^\\kappa$ with $A\\cap U(x)\

  11. Monolithic MACS micro resonators

    Science.gov (United States)

    Lehmann-Horn, J. A.; Jacquinot, J.-F.; Ginefri, J. C.; Bonhomme, C.; Sakellariou, D.

    2016-10-01

    Magic Angle Coil Spinning (MACS) aids improving the intrinsically low NMR sensitivity of heterogeneous microscopic samples. We report on the design and testing of a new type of monolithic 2D MACS resonators to overcome known limitations of conventional micro coils. The resonators' conductors were printed on dielectric substrate and tuned without utilizing lumped element capacitors. Self-resonance conditions have been computed by a hybrid FEM-MoM technique. Preliminary results reported here indicate robust mechanical stability, reduced eddy currents heating and negligible susceptibility effects. The gain in B1 /√{ P } is in agreement with the NMR sensitivity enhancement according to the principle of reciprocity. A sensitivity enhancement larger than 3 has been achieved in a monolithic micro resonator inside a standard 4 mm rotor at 500 MHz. These 2D resonators could offer higher performance micro-detection and ease of use of heterogeneous microscopic substances such as biomedical samples, microscopic specimens and thin film materials.

  12. The MONOLITH prototype

    CERN Document Server

    Ambrosio, M; Bencivenni, G; Candela, A M; Chiarini, A; Chignoli, F; De Deo, M; D'Incecco, M; Gerli, S; Giusti, P; Gómez, F; Gustavino, C; Lindozzi, M; Mannocchi, G; Menghetti, H; Morello, C; Murtas, F; Paoluzzi, G; Pilastrini, R; Redaelli, N G; Santoni, M; Sartorelli, G; Terranova, F; Trinchero, G C

    2000-01-01

    MONOLITH (Massive Observatory for Neutrino Oscillation or LImits on THeir existence) is the project of an experiment to study atmospheric neutrino oscillations with a massive magnetized iron detector. The baseline option is a 34 kt iron detector based on the use of about 50000 m/sup 2/ of the glass Resistive Plate Chambers (glass RPCs) developed at the Laboratori Nazionali del Gran Sasso (LNGS). An 8 ton prototype equipped with 23 m/sup 2/ of glass RPC has been realized and tested at the T7-PS beam at CERN. The energy resolution for pions follows a 68%/ square root (E(GeV))+2% law for orthogonally incident particles, in the energy range between 2 and 10 GeV. The time resolution and the tracking capability of the glass RPC are suitable for the MONOLITH experiment. (7 refs).

  13. SIMULATE-4 pin power calculations

    Energy Technology Data Exchange (ETDEWEB)

    Bahadir, T. [Studsvik Scandpower, Inc., 1087 Beacon St., Newton, MA 02459 (United States); Lindahl, S. Oe [Studsvik Scandpower AB, Hantverkargatan 2A, SE-722 12 Vasteraas (Sweden)

    2006-07-01

    A new pin power reconstruction module has been implemented in Studsvik Scandpower's next generation nodal code, SIMULATE-4. Heterogeneous pin powers are calculated by modulating multi-group pin powers from the sub-mesh solver of SIMULATE-4 with pin form factors from single-assembly CASMO-5 lattice calculations. The multi-group pin power model captures instantaneous spectral effects, and actinide tracking on the assembly sub-mesh describes exposure-induced pin power variations. Model details and verification tests against high order multi-assembly transport methods are presented. The accuracy of the new methods is also demonstrated by comparing SIMULATE-4 calculations with measured critical experiment pin powers. (authors)

  14. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

    OpenAIRE

    Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

    2014-01-01

    Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperat...

  15. Single-Fiber Bidirectional Optical Data Links with Monolithic Transceiver Chips

    OpenAIRE

    Alexander Kern; Sujoy Paul; Dietmar Wahl; Ahmed Al-Samaneh; Rainer Michalzik

    2012-01-01

    We report the monolithic integration, fabrication, and electrooptical properties of AlGaAs-GaAs-based transceiver (TRx) chips for 850 nm wavelength optical links with data rates of multiple Gbit/s. Using a single butt-coupled multimode fiber (MMF), low-cost bidirectional communication in half- and even full-duplex mode is demonstrated. Two design concepts are presented, based on a vertical-cavity surface-emitting laser (VCSEL) and a monolithically integrated p-doped-intrinsic-n-doped (PIN) or...

  16. Bioaffinity chromatography on monolithic supports

    NARCIS (Netherlands)

    Tetala, K.K.R.; Beek, van T.A.

    2010-01-01

    Affinity chromatography on monolithic supports is a powerful analytical chemical platform because it allows for fast analyses, small sample volumes, strong enrichment of trace biomarkers and applications in microchips. In this review, the recent research using monolithic materials in the field of bi

  17. Bioaffinity chromatography on monolithic supports

    NARCIS (Netherlands)

    Tetala, K.K.R.; Beek, van T.A.

    2010-01-01

    Affinity chromatography on monolithic supports is a powerful analytical chemical platform because it allows for fast analyses, small sample volumes, strong enrichment of trace biomarkers and applications in microchips. In this review, the recent research using monolithic materials in the field of bi

  18. Technological and Physical Compatibilities in Hybrid Integration of Laser and Monolithic Integration of Waveguide, Photodetector and CMOS Circuits on Silicon

    NARCIS (Netherlands)

    Zhou, M.J.; Ikkink, T.; Chalmers, J.; Kranenburg, H. van; Albers, H.; Holleman, J.; Lambeck, P.V.; Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  19. Technological and physical compatibilities in hybrid integration of laser and monolithic integration of waveguide, photodetector and CMOS circuits on silicon

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Ikkink, Ton; Chalmers, John; Kranenburg, van Herma; Albers, Hans; Holleman, Jisk; Lambeck, Paul; Joppe, Jan Leendert; Bekman, Herman; Krijger, de Ton; Lambeck, P.V.

    1994-01-01

    In this paper, technological and physical compatibilities in hybrid integration of AlInGaP laser and monolithic integration of ZnO monomode waveguide, pin-photodetector, CMOS circuits for laser power control and signal amplification on silicon substrate are studied. Prospective problems and their po

  20. Design of monoliths through their mechanical properties.

    Science.gov (United States)

    Podgornik, Aleš; Savnik, Aleš; Jančar, Janez; Krajnc, Nika Lendero

    2014-03-14

    Chromatographic monoliths have several interesting properties making them attractive supports for analytics but also for purification, especially of large biomolecules and bioassemblies. Although many of monolith features were thoroughly investigated, there is no data available to predict how monolith mechanical properties affect its chromatographic performance. In this work, we investigated the effect of porosity, pore size and chemical modification on methacrylate monolith compression modulus. While a linear correlation between pore size and compression modulus was found, the effect of porosity was highly exponential. Through these correlations it was concluded that chemical modification affects monolith porosity without changing the monolith skeleton integrity. Mathematical model to describe the change of monolith permeability as a function of monolith compression modulus was derived and successfully validated for monoliths of different geometries and pore sizes. It enables the prediction of pressure drop increase due to monolith compressibility for any monolith structural characteristics, such as geometry, porosity, pore size or mobile phase properties like viscosity or flow rate, based solely on the data of compression modulus and structural data of non-compressed monolith. Furthermore, it enables simple determination of monolith pore size at which monolith compressibility is the smallest and the most robust performance is expected. Data of monolith compression modulus in combination with developed mathematical model can therefore be used for the prediction of monolith permeability during its implementation but also to accelerate the design of novel chromatographic monoliths with desired hydrodynamic properties for particular application.

  1. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    Directory of Open Access Journals (Sweden)

    Clayton Cozzan

    2016-10-01

    Full Text Available With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min. The resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

  2. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    Science.gov (United States)

    Cozzan, Clayton; Brady, Michael J.; O'Dea, Nicholas; Levin, Emily E.; Nakamura, Shuji; DenBaars, Steven P.; Seshadri, Ram

    2016-10-01

    With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). The resulting translucent ceramic monoliths convert UV laser light to blue light with the same efficiency as the starting powder and provide superior thermal management in comparison with silicone encapsulation.

  3. Porous polymer monolithic col

    Directory of Open Access Journals (Sweden)

    Lydia Terborg

    2015-05-01

    Full Text Available A new approach has been developed for the preparation of mixed-mode stationary phases to separate proteins. The pore surface of monolithic poly(glycidyl methacrylate-co-ethylene dimethacrylate capillary columns was functionalized with thiols and coated with gold nanoparticles. The final mixed mode surface chemistry was formed by attaching, in a single step, alkanethiols, mercaptoalkanoic acids, and their mixtures on the free surface of attached gold nanoparticles. Use of these mixtures allowed fine tuning of the hydrophobic/hydrophilic balance. The amount of attached gold nanoparticles according to thermal gravimetric analysis was 44.8 wt.%. This value together with results of frontal elution enabled calculation of surface coverage with the alkanethiol and mercaptoalkanoic acid ligands. Interestingly, alkanethiols coverage in a range of 4.46–4.51 molecules/nm2 significantly exceeded that of mercaptoalkanoic acids with 2.39–2.45 molecules/nm2. The mixed mode character of these monolithic stationary phases was for the first time demonstrated in the separations of proteins that could be achieved in the same column using gradient elution conditions typical of reverse phase (using gradient of acetonitrile in water and ion exchange chromatographic modes (applying gradient of salt in water, respectively.

  4. Biobased monoliths for adenovirus purification.

    Science.gov (United States)

    Fernandes, Cláudia S M; Gonçalves, Bianca; Sousa, Margarida; Martins, Duarte L; Barroso, Telma; Pina, Ana Sofia; Peixoto, Cristina; Aguiar-Ricardo, Ana; Roque, A Cecília A

    2015-04-01

    Adenoviruses are important platforms for vaccine development and vectors for gene therapy, increasing the demand for high titers of purified viral preparations. Monoliths are macroporous supports regarded as ideal for the purification of macromolecular complexes, including viral particles. Although common monoliths are based on synthetic polymers as methacrylates, we explored the potential of biopolymers processed by clean technologies to produce monoliths for adenovirus purification. Such an approach enables the development of disposable and biodegradable matrices for bioprocessing. A total of 20 monoliths were produced from different biopolymers (chitosan, agarose, and dextran), employing two distinct temperatures during the freezing process (-20 °C and -80 °C). The morphological and physical properties of the structures were thoroughly characterized. The monoliths presenting higher robustness and permeability rates were further analyzed for the nonspecific binding of Adenovirus serotype 5 (Ad5) preparations. The matrices presenting lower nonspecific Ad5 binding were further functionalized with quaternary amine anion-exchange ligand glycidyltrimethylammonium chloride hydrochloride by two distinct methods, and their performance toward Ad5 purification was assessed. The monolith composed of chitosan and poly(vinyl) alcohol (50:50) prepared at -80 °C allowed 100% recovery of Ad5 particles bound to the support. This is the first report of the successful purification of adenovirus using monoliths obtained from biopolymers processed by clean technologies.

  5. Space-charge limiting current in spherical cathode diodes

    Institute of Scientific and Technical Information of China (English)

    刘国治; 邵浩

    2003-01-01

    The results of the investigation on the space-charge limiting current for a spherical-cathode diode in the nonrelativistic situation are presented in this paper. The results show that the current enhancement factor equals the square of E-field enhancement factor on the cathode surface. The generated space-charge limiting current is deduced.In the case of a pin-shaped-cathode diode, the space-charge limiting current is also obtained, indicating that the current is independent of the geometric parameters of the diode. Analyses of the shielding effects and the conditions for generation of the uniform space-charge limiting beam show that, for pin-arrayed cathodes, the distance between pins should be in the range from 1.2D to 1.5D, where D is the distance between the two electrodes.

  6. Pinning, de-pinning and re-pinning of a slowly varying rivulet

    KAUST Repository

    Paterson, C.

    2013-09-01

    The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

  7. Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting

    OpenAIRE

    Clayton Cozzan; Brady, Michael J.; Nicholas O’Dea; Emily E. Levin; Shuji Nakamura; Steven P. DenBaars; Ram Seshadri

    2016-01-01

    With high power light emitting diodes and laser diodes being explored for white light generation and visible light communication, thermally robust encapsulation schemes for color-converting inorganic phosphors are essential. In the current work, the canonical blue-emitting phosphor, high purity Eu-doped BaMgAl10O17, has been prepared using microwave-assisted heating (25 min) and densified into translucent ceramic phosphor monoliths using spark plasma sintering (30 min). The resulting transluc...

  8. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    CERN Document Server

    Bronuzzi, J.; Moll, M.; Sallese, J.M.

    2016-01-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set ...

  9. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    Science.gov (United States)

    Bronuzzi, J.; Mapelli, A.; Moll, M.; Sallese, J. M.

    2016-08-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set in full depletion. In a first step, Synopsys Sentaurus TCAD is used to evaluate the soundness of this technique for interface traps characterization such as it may happen in bonded interfaces. Next, an analytical model is developed in details to give a better insight into the physics behind the TCT for interface layers. Further, this can be used as a simple tool to evidence what are the relevant parameters influencing the TCT signal and to set the basis for preliminary characterizations.

  10. Fuel pin cladding

    Science.gov (United States)

    Vaidyanathan, S.; Adamson, M.G.

    1986-01-28

    Disclosed is an improved fuel pin cladding, particularly adapted for use in breeder reactors, consisting of composite tubing with austenitic steel on the outer portion of the thickness of the tube wall and with nickel and/or ferritic material on the inner portion of the thickness of the tube wall. The nickel forms a sacrificial barrier as it reacts with certain fission products thereby reducing fission product activity at the austenitic steel interface. The ferritic material forms a preventive barrier for the austenitic steel as it is immune to liquid metal embrittlement. The improved cladding permits the use of high density fuel which in turn leads to a better breeding ratio in breeder reactors, and will increase the threshold at which failure occurs during temperature transients. 2 figs.

  11. Fuel pin cladding

    Science.gov (United States)

    Vaidyanathan, Swaminathan; Adamson, Martyn G.

    1986-01-01

    An improved fuel pin cladding, particularly adapted for use in breeder reactors, consisting of composite tubing with austenitic steel on the outer portion of the thickness of the tube wall and with nickel and/or ferritic material on the inner portion of the thickness of the tube wall. The nickel forms a sacrificial barrier as it reacts with certain fission products thereby reducing fission product activity at the austenitic steel interface. The ferritic material forms a preventive barrier for the austenitic steel as it is immune to liquid metal embrittlement. The improved cladding permits the use of high density fuel which in turn leads to a better breeding ratio in breeder reactors, and will increase the threshold at which failure occurs during temperature transients.

  12. Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500

  13. Closed-form expression for the current/ voltage characteristics of pin solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Taretto, K.; Rau, U.; Werner, J.H. [Institut fuer Physikalische Elektronik, Pfaffenwaldring 47, 70569, Stuttgart (Germany)

    2003-12-01

    A closed-form expression for the current-voltage relationship of pin diodes and pin solar cells is obtained. The model considers drift and diffusion currents, and assumes a uniform electric field in the intrinsic layer, equal diffusion lengths for electrons and holes and a homogeneous generation rate. We show that both drift and diffusion currents must be taken into account to describe the current over a wide range of applied voltage. The inclusion of both transport mechanisms results in diode ideality factors between 1.8 at low, and 1.2 at high applied voltages. Comparisons of current/voltage characteristics and solar cell output parameters obtained from our model with experimental data of thin-film silicon solar cells show that our model accurately explains the output characteristics of pin solar cells. (orig.)

  14. Progress toward a monolithically integrated coherent diode laser array

    Science.gov (United States)

    Evans, G. A.; Garmire, E. M.; Stoll, H. M.; Osmer, J. A.; Soady, W. E.; Lee, A. B.; Ziegler, M. P.

    1981-02-01

    Progress toward the design and fabrication of a GaAlAs semiconductor laser array capable of high average power levels (0.1 to 1.0 watt) and low (approx 1 millirad) beam divergence is reported. A large optical cavity (LOC) configuration is grown by liquid phase epitaxy. The LOC structure is characterized by photoluminescence scans, ion microprobe mass analysis (IMMA), and optical waveguiding measurements. Fabry-Perot, active-passive, and DBR lasers are fabricated using chemical and ion beam etching. Gratings formed using holographic and ion beam etching techniques provide third order feedback for the DBR lasers, and are also used as distributed beam deflectors (DBDs) and output couplers. Comparisons of the results of experiments performed on DBR lasers, DBDs, and coupled lasers are made with theoretical models. Details of the material growth, material characterization, device fabrication, experiments, and theoretical models are presented in this report.

  15. Study of the Radiation-Hardness of VCSEL and PIN

    CERN Document Server

    Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

    2009-01-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

  16. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    Science.gov (United States)

    Bickford, Justin Robert

    integration method. Passive bond test structures were designed, fabricated, and measured to extract the bond interface electrical behavior, electrical contact resistivity, and thermal conductivity. The In-Pd alloy, employed as the bondmetal interface between these GaAs/silicon test structures, provided a universal ohmic contact between all doping combinations. The bond interface contact resistivity between n-type GaAs and p-type Si was found to be 1.03x10-5 ohm-cm2 and a bondmetal thermal conductivity of 2.51 W/m-K was also determined. In addition, passive un-bonded and bonded microwave waveguides were constructed to test the microwave propagation properties of the bondmetal. The characteristics of these test structures qualified the metalbonding technique for use in heterogeneous microwave systems. The successful fabrication of these structures demonstrated that this metalbonding method could be extended to active devices as well, which would be of similar size, form factor, and utilize the same fabrication methods. An un-bonded active microwave waveguide, similar to one which could become common in heterogeneous microwave systems, was investigated to illustrate its unique microwave properties. This un-bonded traveling wave PIN semiconductor waveguide propagated microwaves in a 'slow-wave' manner, as a consequence of its diode structure.

  17. Paddle-pin alinement test

    Science.gov (United States)

    Gilliam, D. M.; Foster, J. A.

    1977-01-01

    Segmented insulated test bar speeds up patch distributor paddle-pin test. Device eliminates need to disconnect cables or remove distributor. Printed circuit cable and connector reduces weight on bar, adding to tester portability.

  18. Pinning Mechanisms in YBCO Tapes

    CERN Document Server

    Spera, Marcello; Ballarino, Amalia

    2015-01-01

    In this thesis work, a study on flux pinning mechanisms of commercial YBCO tapes is presented. This study has been performed via critical current characterization using transport (via direct I-V curves) and magnetization (via a Vibrating Sample Magnetometer) measurements. The latter ones turned out to be better concerning the comprehension of the pinning landscape of the provided samples, as a wider range of magnetic fields and temperatures is available for those measurements in the setup I used. The comparison of the experimental data with existing theoretical models allowed me to draw a picture of the pinning mechanisms underlying in each sample, and they turned out to be quite different one another. Moreover, for high-performance research tapes, another interesting feature has been found: the counterplay between the self-field critical current and the in-field one. Very well engineered artificial pinning structures limit the self-field critical current density due to the hi...

  19. Enhanced pinning in superconducting thin films with graded pinning landscapes

    Science.gov (United States)

    Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

    2013-05-01

    A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

  20. In situ Fabrication of Monolithic Copper Azide

    Science.gov (United States)

    Li, Bing; Li, Mingyu; Zeng, Qingxuan; Wu, Xingyu

    2016-04-01

    Fabrication and characterization of monolithic copper azide were performed. The monolithic nanoporous copper (NPC) with interconnected pores and nanoparticles was prepared by decomposition and sintering of the ultrafine copper oxalate. The preferable monolithic NPC can be obtained through decomposition and sintering at 400°C for 30 min. Then, the available monolithic NPC was in situ reacted with the gaseous HN3 for 24 h and the monolithic NPC was transformed into monolithic copper azide. Additionally, the copper particles prepared by electrodeposition were also reacted with the gaseous HN3 under uniform conditions as a comparison. The fabricated monolithic copper azide was characterized by Fourier transform infrared (FTIR), inductively coupled plasma-optical emission spectrometry (ICP-OES), and differential scanning calorimetry (DSC).

  1. Interface roughening and pinning

    Science.gov (United States)

    Roux, Stéphane; Hansen, Alex

    1994-04-01

    We study a simple model for thé pinning of an interface by impurities with random strengths, and thé depinning due to thé applied pressure, in a quasi-static propagation lirait. The model is very close to thé so called "Robin Hood" model introduced by Zaitsev. It is designed to describe e.g. thé invasion of a wetting fluid (imbibition) in a heterogeneous porous medium containing a second immiscible fluid. The relation between this model and other previously proposed approaches is discussed. The front of thé invaded domain is shown to develop a self-affine structure with an increase of thé roughness as a power-law of thé injected volume. The value of thé apparent roughness exponent can be favorably compared to some experimental measurements although we argue that thé true roughness exponent is out of reach of commonly used methods. We show that thé distribution f(d, Δ t) of distances d between discrete local invasions at a time interval Δ t can be described by a scaling law f(d, Δ t) = d^{-1}\\varphi(d/sqrt{Δ t}). This form can be obtained from thé identification of a hierarchical structure of "bursts" in thé pressure signal. Those "bursts" are quahtatively similar to those observed in quasistatic drainage, (i.e. invasion percolation), although characterized by différent scaling indices. Nous étudions un modèle simple pour analyser l'accrochage d'une interface sur des impuretés et le décrochage sous l'effet d'une pression appliquée, dans une limite quasi-statique. Ce modèle est très voisin du modèle "Robin Hood" introduit par Zaitsev. Il s'applique en particulier à l'invasion d'un fluide mouillant (imbibition) dans un milieu poreux hétérogène contenant un fluide immiscible. Nous discutons les relations entre ce modèle et d'autres approches proposées pour décrire ce phénomène. Le front d'invasion acquiert une structure auto-affine, avec un développement de la rugosité selon une loi de puissance du volume injecté. La valeur de l

  2. PinBus Interface Design

    Energy Technology Data Exchange (ETDEWEB)

    Hammerstrom, Donald J.; Adgerson, Jewel D.; Sastry, Chellury; Pratt, Richard M.; Pratt, Robert G.

    2009-12-30

    On behalf of the U.S. Department of Energy, PNNL has explored and expanded upon a simple control interface that might have merit for the inexpensive communication of smart grid operational objectives (demand response, for example) to small electric end-use devices and appliances. The approach relies on bi-directional communication via the electrical voltage states of from one to eight shared interconnection pins. The name PinBus has been suggested and adopted for the proposed interface protocol. The protocol is defined through the presentation of state diagrams and the pins’ functional definitions. Both simulations and laboratory demonstrations are being conducted to demonstrate the elegance and power of the suggested approach. PinBus supports a very high degree of interoperability across its interfaces, allowing innumerable pairings of devices and communication protocols and supporting the practice of practically any smart grid use case.

  3. Composite resonator vertical cavity laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Hou, H.Q.; Chow, W.W.; Geib, K.M.; Hammons, B.E.

    1998-05-01

    The use of two coupled laser cavities has been employed in edge emitting semiconductor lasers for mode suppression and frequency stabilization. The incorporation of coupled resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the interaction between the cavities. Composite resonators can be utilized to control spectral and temporal properties within the laser; previous studies of coupled cavity vertical cavity lasers have employed photopumped structures. The authors report the first composite resonator vertical cavity laser diode consisting of two optical cavities and three monolithic distributed Bragg reflectors. Cavity coupling effects and two techniques for external modulation of the laser are described.

  4. Active multi-mode-interferometer broadband superluminescent diodes

    Science.gov (United States)

    Feifei, Wang; Peng, Jin; Ju, Wu; Yanhua, Wu; Fajie, Hu; Zhanguo, Wang

    2016-01-01

    We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi-mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode-interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μm in theory, which is high enough for most tissue imaging. Project supported by the National Natural Science Foundation of China (No. 61274072) and the National High Technology Research and Development Program of China (No. 2013AA014201).

  5. Synchronizability on complex networks via pinning control

    Indian Academy of Sciences (India)

    Yi Liang; Xingyuan Wang

    2013-04-01

    It is proved that the maximum eigenvalue sequence of the principal submatrices of coupling matrix is decreasing. The method of calculating the number of pinning nodes is given based on this theory. The findings reveal the relationship between the decreasing speed of maximum eigenvalue sequence of the principal submatrices for coupling matrix and the synchronizability on complex networks via pinning control. We discuss the synchronizability on some networks, such as scale-free networks and small-world networks. Numerical simulations show that different pinning strategies have different pinning synchronizability on the same complex network, and the synchronizability with pinning control is consistent with one without pinning control in various complex networks.

  6. Diode pumped solid-state laser oscillators for spectroscopic applications

    Science.gov (United States)

    Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

    1987-01-01

    The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

  7. Single-Fiber Bidirectional Optical Data Links with Monolithic Transceiver Chips

    Directory of Open Access Journals (Sweden)

    Alexander Kern

    2012-01-01

    fiber (MMF, low-cost bidirectional communication in half- and even full-duplex mode is demonstrated. Two design concepts are presented, based on a vertical-cavity surface-emitting laser (VCSEL and a monolithically integrated p-doped-intrinsic-n-doped (PIN or metal-semiconductor-metal (MSM photodetector. Whereas the VCSEL-PIN photodiode (PD chips are used for high-speed bidirectional data transmission over 62.5 and 50 μm core diameter MMFs, MSM TRx chips are employed for 100 or 200 μm large-area fibers. Such a monolithic transceiver design based on a well-established material system and avoiding the use of external fiber coupling optics is well suited for inexpensive and compact optical interconnects over distances of a few hundred meters. Standard MMF networks can thus be upgraded using high-speed VCSEL-PIN transceiver chips which are capable to handle data rates of up to 10 Gbit/s.

  8. Improved pinning regime by energetic ions using reduction of pinning potential

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy; Gandini, Alberto; Sawh, Ravi-Persad; Parks, Drew; Mayes, Bill

    2003-05-15

    When ion damage is used to create pinning centers, full columnar pinning centers provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinned field, B{sub pin}. Some of the characteristics of columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centers are limited to B{sub pin}<4 T, and also severely reduce J{sub c}. Evidence is reviewed that aligned damage, or broken-columnar pinning centers, described herein, can provide orders of magnitude higher J{sub c}, and higher pinned field, despite providing lower U{sub pin}. A pinning center morphology is discussed which utilizes multiple-in-line-damage (MILD). For, e.g., present day large grain HTS J{sub c}, obtainable by MILD pinning, is estimated to be of the order of 10{sup 6} A/cm{sup 2} at 77 K, even when crystal plane alignment and weak links are not improved. Pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these observations, and to directly compare MILD to columnar pinning centers. It will also determine the optimum MILD structure. Other measurements of interest, made possible by the same data set, are described.

  9. Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

    Science.gov (United States)

    Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

    2014-03-01

    Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

  10. Monolithic Fuel Fabrication Process Development

    Energy Technology Data Exchange (ETDEWEB)

    C. R. Clark; N. P. Hallinan; J. F. Jue; D. D. Keiser; J. M. Wight

    2006-05-01

    The pursuit of a high uranium density research reactor fuel plate has led to monolithic fuel, which possesses the greatest possible uranium density in the fuel region. Process developments in fabrication development include friction stir welding tool geometry and cooling improvements and a reduction in the length of time required to complete the transient liquid phase bonding process. Annealing effects on the microstructures of the U-10Mo foil and friction stir welded aluminum 6061 cladding are also examined.

  11. Pressure drop in CIM disk monolithic columns.

    Science.gov (United States)

    Mihelic, Igor; Nemec, Damjan; Podgornik, Ales; Koloini, Tine

    2005-02-11

    Pressure drop analysis in commercial CIM disk monolithic columns is presented. Experimental measurements of pressure drop are compared to hydrodynamic models usually employed for prediction of pressure drop in packed beds, e.g. free surface model and capillary model applying hydraulic radius concept. However, the comparison between pressure drop in monolith and adequate packed bed give unexpected results. Pressure drop in a CIM disk monolithic column is approximately 50% lower than in an adequate packed bed of spheres having the same hydraulic radius as CIM disk monolith; meaning they both have the same porosity and the same specific surface area. This phenomenon seems to be a consequence of the monolithic porous structure which is quite different in terms of the pore size distribution and parallel pore nonuniformity compared to the one in conventional packed beds. The number of self-similar levels for the CIM monoliths was estimated to be between 1.03 and 2.75.

  12. Pinning-controllability of complex networks

    OpenAIRE

    Sorrentino, Francesco; Di Bernardo, Mario; Garofalo, Franco; Chen, Guanrong

    2007-01-01

    We study the problem of controlling a general complex network towards an assigned synchronous evolution, by means of a pinning control strategy. We define the pinning-controllability of the network in terms of the spectral properties of an extended network topology. The roles of the control and coupling gains as well as of the number of pinned nodes are also discussed.

  13. A Monolithic High-G SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations

    Directory of Open Access Journals (Sweden)

    Bradford S. Davis

    2006-01-01

    Full Text Available Analog Devices (ADI has designed and fabricated a monolithic high-g acceleration sensor (ADXSTC3-HG fabricated with the ADI silicon-on-insulator micro-electro-mechanical system (SOI-MEMS process. The SOI-MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors with excellent cross-axis rejection. The high-g accelerometer discussed in this paper was designed to measure in-plane acceleration to 10,000 g while subjected to 100,000 g in the orthogonal axes. These requirements were intended to meet Army munition applications. The monolithic sensor was packaged in an 8-pin leadless chip carrier (LCC-8 and was successfully demonstrated by the US Army Research Laboratory (ARL as part of an inertial measurement unit during an instrumented flight experiment of artillery projectiles launched at 15,000 g.

  14. Graphene-supported metal oxide monolith

    Energy Technology Data Exchange (ETDEWEB)

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  15. Graphene-supported metal oxide monolith

    Science.gov (United States)

    Worsley, Marcus A.; Baumann, Theodore F.; Biener, Juergen; Biener, Monika A.; Wang, Yinmin; Ye, Jianchao; Tylski, Elijah

    2017-01-10

    A composition comprising at least one graphene-supported metal oxide monolith, said monolith comprising a three-dimensional structure of graphene sheets crosslinked by covalent carbon bonds, wherein the graphene sheets are coated by at least one metal oxide such as iron oxide or titanium oxide. Also provided is an electrode comprising the aforementioned graphene-supported metal oxide monolith, wherein the electrode can be substantially free of any carbon-black and substantially free of any binder.

  16. Radiation hardness studies on CMOS monolithic pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, Marco [Department of Physics, University of California at Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Bisello, Dario [Dipartimento di Fisica, Universita di Padova and INFN, Sezione di Padova, I-35131 Padova (Italy); Contarato, Devis, E-mail: DContarato@lbl.go [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Denes, Peter; Doering, Dionisio [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Giubilato, Piero [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Dipartimento di Fisica, Universita di Padova and INFN, Sezione di Padova, I-35131 Padova (Italy); Sung Kim, Tae [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Mattiazzo, Serena [Dipartimento di Fisica, Universita di Padova and INFN, Sezione di Padova, I-35131 Padova (Italy); Radmilovic, Velimir [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Zalusky, Sarah [Department of Physics, University of California at Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States)

    2010-12-11

    This paper presents irradiation studies performed on a CMOS monolithic pixel sensor prototype implementing different optimizations of the pixel cell aimed at a superior radiation tolerance. Irradiations with 200 keV electrons up to a total dose of 1.1 Mrad have been performed in view of the utilization of such a design in Transmission Electron Microscopy (TEM) applications. Comparative irradiations were performed with 29 MeV protons up to a 2 Mrad total dose and with 1-14 MeV neutrons up to fluences in excess of 10{sup 13} n{sub eq} cm{sup -2}. Experimental results show an improved performance of pixels designed with Enclosed Layout Transistor (ELT) rules and an optimized layout of the charge collecting diodes.

  17. Self-shearing retentive pins: a laboratory evaluation of pin channel penetration before shearing.

    Science.gov (United States)

    Barkmeier, W W; Cooley, R L

    1979-09-01

    This laboratory study determined the depth reached by self-shearing pins in dentin pin channels. Pin channels were prepared with the self-limiting shoulder twist drill for each of the four systems tested. Mean channel depth reached for the various pin systems was: Stabilok (small), 2.31 mm; Stabilok (medium), 1.78 mm; Reten Pin, 1.40 mm; and TMS (Regular), 2.04 mm. A coparison was also made by calculating the mean percent of penetration in relation to the depth of prepared pin channel: Stabilok (small), 92.50%; Stabilok (medium), 63.62%; Reten Pin, 66.67%; and TMS (Regular) 81.75%.

  18. Comparison of Monolithic Optical Frequency Comb Generators Based on Passively Mode-Locked Lasers for Continuous Wave mm-Wave and Sub-THz Generation

    DEFF Research Database (Denmark)

    Criado, A. R.; de Dios, C.; Acedo, P.;

    2012-01-01

    In this paper, two different Passive Mode-Locked Laser Diodes (PMLLD) structures, a Fabry–Perot cavity and a ring cavity laser are characterized and evaluated as monolithic Optical Frequency Comb Generators (OFCG) for CW sub-THz generation. An extensive characterization of the devices under study...

  19. Monolithic white LED based on AlxGa1-x N/InyGa1-yN DBR resonant-cavity

    Science.gov (United States)

    Yu, Chen; Lirong, Huang; Shanshan, Zhu

    2009-01-01

    A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlxGa1-xN/InyGa1-yN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.

  20. AlxGa1-xN/InyGa1-yN DBR resonant-cavity based monolithic white LED

    Science.gov (United States)

    Chen, Yu; Huang, Lirong; Zhu, Shanshan

    2008-12-01

    A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlxGa1-xN / InyGa1-yN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.

  1. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  2. Monolithic Active Pixel Matrix with Binary Counters (MAMBO) ASIC

    Energy Technology Data Exchange (ETDEWEB)

    Khalid, Farah F.; Deptuch, Grzegorz; Shenai, Alpana; Yarema, Raymond J.; /Fermilab

    2010-11-01

    Monolithic Active Matrix with Binary Counters (MAMBO) is a counting ASIC designed for detecting and measuring low energy X-rays from 6-12 keV. Each pixel contains analogue functionality implemented with a charge preamplifier, CR-RC{sup 2} shaper and a baseline restorer. It also contains a window comparator which can be trimmed by 4 bit DACs to remove systematic offsets. The hits are registered by a 12 bit ripple counter which is reconfigured as a shift register to serially output the data from the entire ASIC. Each pixel can be tested individually. Two diverse approaches have been used to prevent coupling between the detector and electronics in MAMBO III and MAMBO IV. MAMBO III is a 3D ASIC, the bottom ASIC consists of diodes which are connected to the top ASIC using {mu}-bump bonds. The detector is decoupled from the electronics by physically separating them on two tiers and using several metal layers as a shield. MAMBO IV is a monolithic structure which uses a nested well approach to isolate the detector from the electronics. The ASICs are being fabricated using the SOI 0.2 {micro}m OKI process, MAMBO III is 3D bonded at T-Micro and MAMBO IV nested well structure was developed in collaboration between OKI and Fermilab.

  3. GeSn p-i-n waveguide photodetectors on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Yu-Hsiang; Chang, Guo-En, E-mail: imegec@ccu.edu.tw [Department of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chia-Yi County 62102, Taiwan (China); Cheng, H. H. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Mashanov, Vladimir I. [Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrentjeva 13, Novosibirsk 630090 (Russian Federation)

    2014-12-08

    We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

  4. Experimental Study of the Influence of Surface Conditions on Explosive Electron Emission From a Pin Cathode

    Science.gov (United States)

    Pikuz, S. A.; Shelkovenko, T. A.; Hammer, D. A.; Parkevich, E. V.; Tilikin, I. N.; Mingaleev, A. R.; Agafonov, A. V.

    2016-10-01

    Most theories of Explosive Electron Emission are based on the idea of cathode flares developing after explosion of metal whiskers on the cathode surface. The spatial structure of the flare, its origin and the process of flare development are still a matter of conjecture. In this work we used picosecond duration high resolution laser probing and X-pinch point-projection X-ray radiography to directly observe whisker explosion in a high-current diode. Pin cathodes made from thin 5-25 μm W, Cu or Mo wires were used as the load in return current circuits of hybrid X-pinches on the XP and BIN pulsers. Pin length, pin-anode gap and wire surface conditions were varied over a wide range. The diode current and voltage were measured. In experiments with small wire-anode gap (0.1 - 1 mm) development of the expanded dense core of the wire was observed except with lengths of 100-200 microns. Strong mitigation of the electron emission was observed in experiments with heated pins. Work at Cornell was supported by the NNSA Stewardship Sciences Academic Programs under DOE Cooperative Agreement No. DE-NA0001836. The work in Lebedev Institute was sponsored by the Russian Foundation for Basic Research Project No. 140201206.

  5. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  6. Pinning control of chimera states

    Science.gov (United States)

    Gambuzza, Lucia Valentina; Frasca, Mattia

    2016-08-01

    The position of the coherent and incoherent domain of a chimera state in a ring of nonlocally coupled oscillators is strongly influenced by the initial conditions, making nontrivial the problem of confining them in a specific region of the structure. In this paper we propose the use of spatial pinning to induce a chimera state where the nodes belonging to one domain, either the coherent or the incoherent, are fixed by the control action. We design two different techniques according to the dynamics to be forced in the region of pinned nodes, and validate them on FitzHugh-Nagumo and Kuramoto oscillators. Furthermore, we introduce a suitable strategy to deal with the effects of finite size in small structures.

  7. Be on Pins and Needles

    Institute of Scientific and Technical Information of China (English)

    周立

    2003-01-01

    英语对话:A:It seems you’re on pins and needles today.Anything troubling you?B:Yeah.I don’t know why bad things keep happening to me .You see,mycar was stolen and the warehouse had been broken into.I can’t keep myfinger on the causes of this damned thing.A:There must be someone who had planned that.Do you have a partieularperson in mind?

  8. Investigation of the bulk pinning force in YBCO superconducting films with nano-engineered pinning centres

    Science.gov (United States)

    Crisan, A.; Dang, V. S.; Yearwood, G.; Mikheenko, P.; Huhtinen, H.; Paturi, P.

    2014-08-01

    For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface, or point) and on their character (normal cores or Δκ cores). We have used the Dew Hughes approach to determine the types of pinning centres present in various samples, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. Results show that normal surface pinning centres are present throughout almost all the samples, as dominant pinning mechanism. Such 2D extended pinning centres are mainly due to dislocations, grain boundaries, nanorods. Strong normal point pinning centres were found to be common in BZO doped YBCO samples. Other types of pinning centres, in various (minor) concentrations were also found in some of the samples.

  9. Monolithically integrated absolute frequency comb laser system

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  10. Nanosecond monolithic CMOS readout cell

    Science.gov (United States)

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  11. Compact monolithic capacitive discharge unit

    Science.gov (United States)

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  12. Alignment Pins for Assembling and Disassembling Structures

    Science.gov (United States)

    Campbell, Oliver C.

    2008-01-01

    Simple, easy-to-use, highly effective tooling has been devised for maintaining alignment of bolt holes in mating structures during assembly and disassembly of the structures. The tooling was originally used during removal of a body flap from the space shuttle Atlantis, in which misalignments during removal of the last few bolts could cause the bolts to bind in their holes. By suitably modifying the dimensions of the tooling components, the basic design of the tooling can readily be adapted to other structures that must be maintained in alignment. The tooling includes tapered, internally threaded alignment pins designed to fit in the bolt holes in one of the mating structures, plus a draw bolt and a cup that are used to install or remove each alignment pin. In preparation for disassembly of two mating structures, external supports are provided to prevent unintended movement of the structures. During disassembly of the structures, as each bolt that joins the structures is removed, an alignment pin is installed in its place. Once all the bolts have been removed and replaced with pins, the pins maintain alignment as the structures are gently pushed or pulled apart on the supports. In assembling the two structures, one reverses the procedure described above: pins are installed in the bolt holes, the structures are pulled or pushed together on the supports, then the pins are removed and replaced with bolts. The figure depicts the tooling and its use. To install an alignment pin in a bolt hole in a structural panel, the tapered end of the pin is inserted from one side of the panel, the cup is placed over the pin on the opposite side of the panel, the draw bolt is inserted through the cup and threaded into the pin, the draw bolt is tightened to pull the pin until the pin is seated firmly in the hole, then the draw bolt and cup are removed, leaving the pin in place. To remove an alignment pin, the cup is placed over the pin on the first-mentioned side of the panel, the draw

  13. Microfluidic devices and methods including porous polymer monoliths

    Science.gov (United States)

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  14. Components for monolithic fiber chirped pulse amplification laser systems

    Science.gov (United States)

    Swan, Michael Craig

    The first portion of this work develops techniques for generating femtosecond-pulses from conventional fabry-perot laser diodes using nonlinear-spectral-broadening techniques in Yb-doped positive dispersion fiber ampliers. The approach employed an injection-locked fabry-perot laser diode followed by two stages of nonlinear-spectral-broadening to generate sub-200fs pulses. This thesis demonstrated that a 60ps gain-switched fabry-perot laser-diode can be injection-locked to generate a single-longitudinal-mode pulse and compressed by nonlinear spectral broadening to 4ps. Two problems have been identified that must be resolved before moving forward with this approach. First, gain-switched pulses from a standard diode-laser have a number of characteristics not well suited for producing clean self-phase-modulation-broadened pulses, such as an asymmetric temporal shape, which has a long pulse tail. Second, though parabolic pulse formation occurs for any arbitrary temporal input pulse profile, deviation from the optimum parabolic input results in extensively spectrally modulated self-phase-modulation-broadened pulses. In conclusion, the approach of generating self-phase-modulation-broadened pulses from pulsed laser diodes has to be modified from the initial approach explored in this thesis. The first Yb-doped chirally-coupled-core ber based systems are demonstrated and characterized in the second portion of this work. Robust single-mode performance independent of excitation or any other external mode management techniques have been demonstrated in Yb-doped chirally-coupled-core fibers. Gain and power efficiency characteristics are not compromised in any way in this novel fiber structure up to the 87W maximum power achieved. Both the small signal gain at 1064nm of 30.3dB, and the wavelength dependence of the small signal gain were comparable to currently deployed large-mode-area-fiber technology. The efficiencies of the laser and amplifier were measured to be 75% and 54

  15. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

    Energy Technology Data Exchange (ETDEWEB)

    Negru, R

    2008-06-15

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

  16. Uncertainty of pin height measurement for the determination of wear in pin-on-plate test

    DEFF Research Database (Denmark)

    Drago, Nicola; De Chiffre, Leonardo; Poulios, Konstantinos

    2014-01-01

    machine (CMM), achieving an expanded measurement uncertainty (k = 2) better than 1 mm. A simple dedicated fixture adaptable to workshop environment was developed and its metrological capability investigated, estimating an average uncertainty of measurement in the order of 5 mm (k = 2). Fixture......The paper concerns measurement of pin height for the determination of wear in a pin-on-plate (POP) or pin-on-disc (POD) test, where a pin is mounted on a holder that can be fixed on the test rig and removed for measurements. The amount of wear is assessed as difference of pin height before...... and after the test, using the distance between holder plane and pin friction plane as measurand. A series of measurements were performed in connection with POP testing of different friction material pins mounted on an aluminium holder. Pin height measurements were carried out on a coordinate measuring...

  17. Improved shock-detection pin arrangement

    Energy Technology Data Exchange (ETDEWEB)

    Erskine, D.J.

    1995-08-01

    Shockwave speeds are often measured by comparing arrival times at the tips of electrical shorting pins in a hexagonal array over two elevations (called up and down). In the conventional arrangement, the center pin is solely responsible for measuring the curvature of the wavefront. Without this datum the shock speed cannot be precisely determined. In some experiments this pin fail frequently enough to be a problem. We report a simple rearrangement between up and down designated pins which eliminates the critical reliance on a single.

  18. PIN1 gene variants in Alzheimer's disease

    Directory of Open Access Journals (Sweden)

    Siedlecki Janusz

    2009-11-01

    Full Text Available Abstract Background Peptidyl-prolyl isomerase, NIMA-interacting 1 (PIN1 plays a significant role in the brain and is implicated in numerous cellular processes related to Alzheimer's disease (AD and other neurodegenerative conditions. There are confounding results concerning PIN1 activity in AD brains. Also PIN1 genetic variation was inconsistently associated with AD risk. Methods We performed analysis of coding and promoter regions of PIN1 in early- and late-onset AD and frontotemporal dementia (FTD patients in comparison with healthy controls. Results Analysis of eighteen PIN1 common polymorphisms and their haplotypes in EOAD, LOAD and FTD individuals in comparison with the control group did not reveal their contribution to disease risk. In six unrelated familial AD patients four novel PIN1 sequence variants were detected. c.58+64C>T substitution that was identified in three patients, was located in an alternative exon. In silico analysis suggested that this variant highly increases a potential affinity for a splicing factor and introduces two intronic splicing enhancers. In the peripheral leukocytes of one living patient carrying the variant, a 2.82 fold decrease in PIN1 expression was observed. Conclusion Our data does not support the role of PIN1 common polymorphisms as AD risk factor. However, we suggest that the identified rare sequence variants could be directly connected with AD pathology, influencing PIN1 splicing and/or expression.

  19. Mushroom-type structures with the wires connected through diodes: Theory and applications

    Science.gov (United States)

    Forouzmand, Ali; Kaipa, Chandra S. R.; Yakovlev, Alexander B.

    2016-07-01

    In this paper, we establish a general formalism to quantify the interaction of electromagnetic waves with mushroom-type structures (high impedance surface and bi-layer) with diodes inserted along the direction of the wires. The analysis is carried out using the nonlocal homogenization model for the mushroom structure with the generalized additional boundary conditions at the connection of the wires to diodes. We calculate numerically the magnitude and phase of the reflected/transmitted fields in the presence of an ideal and realistic PIN diodes. It is observed that the reflection/transmission characteristics of the mushroom-type structures can be controlled by tuning the working states of the integrated PIN diodes. We realize a structure with a multi-diode switch to minimize the undesired transmission for a particular incident angle. In addition, a dual-band subwavelength imaging lens is designed based on the resonant amplification of evanescent waves, wherein the operating frequency can be tuned by changing the states of the PIN diodes. The analytical results are verified with the full-wave electromagnetic solver CST Microwave Studio, showing a good agreement.

  20. Evaluation of SiC schottky diodes using pressure contacts

    OpenAIRE

    Ortiz Gonzalez, Jose; Alatise, Olayiwola; Aliyu, Attahir; Rajaguru, Pushparajah; Castellazzi, Alberto; Ran, Li; Mawby, Philip; Bailey, Chris

    2017-01-01

    The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristor- based applications in FACTS/HVDC, although press-pack IGBTs have become commercially available more recently. These press-pack IGBTs require anti-parallel PiN diodes for enabling reve...

  1. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  2. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  3. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  4. Monolithic Continuous-Flow Bioreactors

    Science.gov (United States)

    Stephanopoulos, Gregory; Kornfield, Julia A.; Voecks, Gerald A.

    1993-01-01

    Monolithic ceramic matrices containing many small flow passages useful as continuous-flow bioreactors. Ceramic matrix containing passages made by extruding and firing suitable ceramic. Pores in matrix provide attachment medium for film of cells and allow free movement of solution. Material one not toxic to micro-organisms grown in reactor. In reactor, liquid nutrients flow over, and liquid reaction products flow from, cell culture immobilized in one set of channels while oxygen flows to, and gaseous reaction products flow from, culture in adjacent set of passages. Cells live on inner surfaces containing flowing nutrient and in pores of walls of passages. Ready access to nutrients and oxygen in channels. They generate continuous high yield characteristic of immobilized cells, without large expenditure of energy otherwise incurred if necessary to pump nutrient solution through dense biomass as in bioreactors of other types.

  5. Ion Beam Induced Charge analysis of diamond diodes

    Science.gov (United States)

    Lehnert, J.; Meijer, J.; Ronning, C.; Spemann, D.; Vittone, E.

    2017-08-01

    Diamond based p-i-n light-emitting diodes, developed to electrically drive single-photon sources in the visible spectral region at room temperature, have the potential to play a key role in quantum based technologies. In order to gain more insight into the charge injection mechanism occurring in these diodes, we carried out an experiment aimed to investigate the electrostatics and the charge carrier transport by the Ion Beam Induced Charge (IBIC) technique, using 1 MeV He microbeam raster scanning of p-i-n structures fabricated in a high purity diamond substrate, using lithographic masking and P and B ion implantation doping. Charge Collection Efficiency (CCE) maps obtained at low ion fluence, show that induced charge pulses arise only from the P-implanted region, whereas no IBIC signals arise from the B-implanted region. This result suggests the formation of a slightly p-type doped substrate, forming a n+-p-p+, rather than the expected p-i-n, structure. However, for high fluence scans of small areas covering the intrinsic gap, CCE maps are more uniform and compatible with a p-i-n structure, suggesting the occurrence of a ;priming effect;, which saturates acceptor levels resulting in a decrease of the effective doping of the diamond substrate.

  6. Anisotropically structured magnetic aerogel monoliths

    Science.gov (United States)

    Heiligtag, Florian J.; Airaghi Leccardi, Marta J. I.; Erdem, Derya; Süess, Martin J.; Niederberger, Markus

    2014-10-01

    Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture.Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture. Electronic supplementary information (ESI) available: Digital photographs of dispersions and gels with different water-to-ethanol ratios; magnetic measurements of an anatase aerogel containing 0.25 mol% Fe3O4 nanoparticles; XRD patterns of the iron oxide and

  7. Monolithic cells for solar fuels.

    Science.gov (United States)

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-07

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed.

  8. "Diode Pumped Solid State Lasers At 2 And 3 µm"

    Science.gov (United States)

    Esterowitz, Leon

    1988-06-01

    took a decade to transform a fragile device requiring cryogenic temperatures into one capable of emitting a continuous beam at room temperature. In the last few years the rapid progress in fabricating diode lasers has increased interest in developing diode pumped solid state lasers. Device fabrication improvements such as double hetero-structures, multiple quantum well structures, monolithic phased arrays and multiple stripe lasers which were made possible by improved manufacturing technologies have produced a dramatic reduction of threshold current and increases of slope efficiency, lifetime and output power.

  9. Monolithic Time Delay Integrated APD Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The overall goal of the proposed program by Epitaxial Technologies is to develop monolithic time delay integrated avalanche photodiode (APD) arrays with sensitivity...

  10. The maize PIN gene family of auxin transporters

    Directory of Open Access Journals (Sweden)

    Cristian eForestan

    2012-02-01

    Full Text Available Auxin is a key regulator of plant development and its differential distribution in plant tissues, established by a polar cell-to-cell transport, can trigger a wide range of developmental processes. A few members of the two families of auxin efflux transport proteins, PIN-formed (PIN and P-glycoprotein (ABCB/PGP, have so far been characterized in maize. Nine new Zea mays auxin efflux carriers PIN family members and two maize PIN-like genes have now been identified. Four members of PIN1 (named ZmPIN1a–d cluster, one gene homologous to AtPIN2 (ZmPIN2, three orthologs of PIN5 (ZmPIN5a–c, one gene paired with AtPIN8 (ZmPIN8, and three monocot-specific PINs (ZmPIN9, ZmPIN10a and b were cloned and the phylogenetic relationships between early land plants, monocots and eudicots PIN proteins investigated, including the new maize PIN proteins. Tissue-specific expression patterns of the twelve maize PIN genes, two PIN-like genes and ZmABCB1, an ABCB auxin efflux carrier, were analyzed using semi-quantitative RT–PCR. ZmPIN gene transcripts have overlapping expression domains in the root apex, during male and female inflorescence differentiation and kernel development. However, some PIN family members have specific tissue localization: ZmPIN1d transcript marks the L1 layer of the SAM and IM during the flowering transition and the monocot-specific ZmPIN9 is expressed in the root endodermis and pericycle. The phylogenetic and gene structure analyses together with the expression pattern of the ZmPIN gene family indicate that subfunctionalization of some maize PINs can be associated to the differentiation and development of monocot-specific organs and tissues and might have occurred after the divergence between dicots and monocots.

  11. Lighting with laser diodes

    Science.gov (United States)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  12. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  13. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    Science.gov (United States)

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  14. Pinning impulsive control algorithms for complex network.

    Science.gov (United States)

    Sun, Wen; Lü, Jinhu; Chen, Shihua; Yu, Xinghuo

    2014-03-01

    In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms.

  15. Activated Carbon Fiber Monoliths as Supercapacitor Electrodes

    Directory of Open Access Journals (Sweden)

    Gelines Moreno-Fernandez

    2017-01-01

    Full Text Available Activated carbon fibers (ACF are interesting candidates for electrodes in electrochemical energy storage devices; however, one major drawback for practical application is their low density. In the present work, monoliths were synthesized from two different ACFs, reaching 3 times higher densities than the original ACFs’ apparent densities. The porosity of the monoliths was only slightly decreased with respect to the pristine ACFs, the employed PVDC binder developing additional porosity upon carbonization. The ACF monoliths are essentially microporous and reach BET surface areas of up to 1838 m2 g−1. SEM analysis reveals that the ACFs are well embedded into the monolith structure and that their length was significantly reduced due to the monolith preparation process. The carbonized monoliths were studied as supercapacitor electrodes in two- and three-electrode cells having 2 M H2SO4 as electrolyte. Maximum capacitances of around 200 F g−1 were reached. The results confirm that the capacitance of the bisulfate anions essentially originates from the double layer, while hydronium cations contribute with a mixture of both, double layer capacitance and pseudocapacitance.

  16. Nanoscale pinning effect evaluated from deformed nanobubbles

    Science.gov (United States)

    Teshima, Hideaki; Nishiyama, Takashi; Takahashi, Koji

    2017-01-01

    Classical thermodynamics theory predicts that nanosized bubbles should disappear in a few hundred microseconds. The surprisingly long lifetime and stability of nanobubbles are therefore interesting research subjects. It has been proposed that the stability of nanobubbles arises through pinning of the three-phase contact line, which results from intrinsic nanoscale geometrical and chemical heterogeneities of the substrate. However, a definitive explanation of nanobubble stability is still lacking. In this work, we examined the stability mechanism by introducing a "pinning force." We investigated nanobubbles at a highly ordered pyrolytic graphite/pure water interface by peak force quantitative nano-mechanical mapping and estimated the pinning force and determined its maximum value. We then observed the shape of shrinking nanobubbles. Because the diameter of the shrinking nanobubbles was pinned, the height decreased and the contact angle increased. This phenomenon implies that the stability results from the pinning force, which flattens the bubble through the pinned three-phase contact line and prevents the Laplace pressure from increasing. The pinning force can also explain the metastability of coalesced nanobubbles, which have two semispherical parts that are joined to form a dumbbell-like shape. The pinning force of the semispherical parts was stronger than that of the joint region. This result demonstrates that the contact line of the semispherical parts is pinned strongly to keep the dumbbell-like shape. Furthermore, we proposed a nanobubble generation mechanism for the solvent-exchange method and explained why the pinning force of large nanobubbles was not initially at its maximum value, as it was for small nanobubbles.

  17. Pattern Reconfigurable Patch Antenna menggunakan Edge Shorting Pin dan Symmetrical Control Pin

    Directory of Open Access Journals (Sweden)

    DWI ANDI NURMANTRIS

    2016-02-01

    Full Text Available Abstrak Metode baru dalam mendesain suatu pattern reconfigurable antenna telah diteliti. Penelitian ini fokus pada optimasi antena patch lingkaran single layer pencatuan probe koaksial dengan mengintegrasikan 24 switch/shorting pin pada sisi patch yang disebut edge shorting pin dan 8 shorting pin membentuk lingkaran dengan radius tertentu dan selanjutnya disebut symmetrical control pin yang fungsinya sebagai metode penyepadan impedansi. Algoritma Genetika yang dikombinasikan dengan Finite Element Software digunakan untuk mengoptimasi kombinasi  switch, radius lingkaran symmetrical control pin, dan radius patch untuk mendapatkan kemampuan pattern reconfigurability. Antena ini menghasilkan 8 kemungkinan arah radiasi azzimuth dengan resolusi 45o dan arah elevasi 30o pada frekuensi 2,4 Ghz. Optimasi, simulasi, fabrikasi, dan pengukuran dilakukan untuk memverifikasi hasil penelitian. Kata kunci: Patch Lingkaran, Edge Shorting Pin, Symmetrical Control Pin, Algoritma Genetika, Pattern Reconfigurable   Abstract New method for desaining pattern reconfigurable antenna was studied. This study focuses on the optimization of a single layer circular patch antenna with probe feed by integrating the 24 switch / shorting pin on the side of the patch that called Edge Shorting Pins and 8 shorting pins form circular line in such radius that called Symmetrical Control Pins as a impedance matching method. Genetic algorithm combined with the Finite Element Software is used to optimize the switch combination, the radius of circular line of symmetrical control pins, and the patch radius to obtain a pattern reconfigurability capabilities. This antenna produces 8 possible directions of azimuth radiation with a resolution of 45o and 30o elevation direction at a frequency of 2.4 GHz. Optimization, simulation, fabrication, and measurement was done to verify the results. Keywords: Circular Patch, Edge Shorting Pin, Symmetrical Control Pin, Genetic Algorithm, Pattern

  18. Effects of Auxins on PIN-FORMED2 (PIN2) Dynamics Are Not Mediated by Inhibiting PIN2 Endocytosis.

    Science.gov (United States)

    Jásik, Ján; Bokor, Boris; Stuchlík, Stanislav; Mičieta, Karol; Turňa, Ján; Schmelzer, Elmon

    2016-10-01

    By using the photoconvertible fluorescence protein Dendra2 as a tag we demonstrated that neither the naturally occurring auxins indole-3-acetic acid and indole-3-butyric acid, nor the synthetic auxin analogs 1-naphthaleneacetic acid and 2,4-dichlorophenoxyacetic acid nor compounds inhibiting polar auxin transport such as 2,3,5-triiodobenzoic acid and 1-N-naphthylphthalamic acid, were able to inhibit endocytosis of the putative auxin transporter PIN-FORMED2 (PIN2) in Arabidopsis (Arabidopsis thaliana) root epidermis cells. All compounds, except Indole-3-butyric acid, repressed the recovery of the PIN2-Dendra2 plasma membrane pool after photoconversion when they were used in high concentrations. The synthetic auxin analogs 1-naphthaleneacetic acid and 2,4-dichlorophenoxyacetic acid showed the strongest inhibition. Auxins and auxin transport inhibitors suppressed also the accumulation of both newly synthesized and endocytotic PIN2 pools in Brefeldin A compartments (BFACs). Furthermore, we demonstrated that all compounds are also interfering with BFAC formation. The synthetic auxin analogs caused the highest reduction in the number and size of BFACs. We concluded that auxins and inhibitors of auxin transport do affect PIN2 turnover in the cells, but it is through the synthetic rather than the endocytotic pathway. The study also confirmed inappropriateness of the BFA-based approach to study PIN2 endocytosis because the majority of PIN2 accumulating in BFACs is newly synthesized and not derived from the plasma membrane. © 2016 American Society of Plant Biologists. All Rights Reserved.

  19. Monolithic oxide-metal composite thermoelectric generators for energy harvesting

    Science.gov (United States)

    Funahashi, Shuichi; Nakamura, Takanori; Kageyama, Keisuke; Ieki, Hideharu

    2011-06-01

    Monolithic oxide-metal composite thermoelectric generators (TEGs) were fabricated using multilayer co-fired ceramic technology. These devices consisted of Ni0.9Mo0.1 and La0.035Sr0.965TiO3 as p- and n-type thermoelectric materials, and Y0.03Zr0.97O2 was used as an insulator, sandwiched between p- and n-type layers. To co-fire dissimilar materials, p-type layers contained 20 wt. % La0.035Sr0.965TiO3; thus, these were oxide-metal composite layers. The fabricated device had 50 pairs of p-i-n junctions of 5.9 mm × 7.0 mm × 2.6 mm. The calculated maximum value of the electric power output from the device was 450 mW/cm2 at ΔT = 360 K. Furthermore, this device generated 100 μW at ΔT = 10 K and operated a radio frequency (RF) transmitter circuit module assumed to be a sensor network system.

  20. Pinning controllability of complex networks with community structure.

    Science.gov (United States)

    Miao, Qingying; Tang, Yang; Kurths, Jürgen; Fang, Jian-an; Wong, W K

    2013-09-01

    In this paper, we study the controllability of networks with different numbers of communities and various strengths of community structure. By means of simulations, we show that the degree descending pinning scheme performs best among several considered pinning schemes under a small number of pinned nodes, while the degree ascending pinning scheme is becoming more powerful by increasing the number of pinned nodes. It is found that increasing the number of communities or reducing the strength of community structure is beneficial for the enhancement of the controllability. Moreover, it is revealed that the pinning scheme with evenly distributed pinned nodes among communities outperforms other kinds of considered pinning schemes.

  1. Coupled Resonator Vertical Cavity Laser Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Chow, W.W.; Fischer, A.J.; Allerman, A.A.; Hou, H.Q.; Geib, K.M.

    1999-07-22

    For many applications, the device performance of edge emitting semiconductor lasers can be significantly improved through the use of multiple section devices. For example, cleaved coupled cavity (C3) lasers have been shown to provide single mode operation, wavelength tuning, high speed switching, as well as the generation of short pulses via mode-locking and Q-switching [1]. Using composite resonators within a vertical cavity laser opens up new possibilities due to the unique ability to tailor the coupling between the monolithic cavities, incorporate passive or active resonators which are spectrally degenerate or detuned, and to fabricate these devices in 2-dimensional arrays. Composite resonator vertical cavity lasers (CRVCL) have been examined using optical pumping and electrical injection [2-5]. We report on CRVCL diodes and show that efficient modulation of the laser emission can be achieved by either forward or reverse biasing the passive cavity within a CRVCL.

  2. Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich

    2012-06-22

    This work is concerned with the realization and investigation of a light emitting diode (LED) structure within single GaN nanowires (NWs) and its integration with Si technology. To this end first a general understanding of the GaN NW growth is given. This is followed by investigations of the influence which doping species, such as Mg and Si, have on the growth of the NWs. The experience gathered in these studies set the basis for the synthesis of nominal p-i-n and n-i-p junctions in GaN NWs. Investigations of these structures resulted in the technologically important insight, that p-type doping with Mg is achieved best if it is done in the later NW growth stage. This implies that it is beneficial for a NW LED to place the p-type segment on the NW top. Another important component of an LED is the active zone where electron-hole recombination takes place. In the case of planar GaN LEDs, this is usually achieved by alloying Ga and In to form InGaN. In order to be able to control the growth under a variety of conditions, we investigate the growth of InGaN in the form of extended segments on top of GaN NWs, as well as multi quantum wells (MQWs) in GaN NWs. All the knowledge gained during these preliminary studies is harnessed to reach the overall goal: The realization of a GaN NW LED. Such structures are fabricated, investigated and processed into working LEDs. Finally, a report on the efforts of integrating III-nitride NW LEDs and Si based metaloxide-semiconductor field effect transistor (MOSFET) technology is given. This demonstrates the feasibility of the monolithic integration of both devices on the same wafer at the same time.

  3. Diode laser power module for beamed power transmission

    Science.gov (United States)

    Choi, S. H.; Williams, M. D.; Lee, J. H.; Conway, E. J.

    1991-01-01

    Recent progress with powerful, efficient, and coherent monolithic diode master-oscillator/power-amplifier (M-MOPA) systems is promising for the development of a space-based diode laser power station. A conceptual design of a 50-kW diode laser power module was made for space-based power stations capable of beaming coherent power to the moon, Martian rovers, or other satellites. The laser diode power module consists of a solar photovoltaic array or nuclear power source, diode laser arrays (LDAs), a phase controller, beam-steering optics, a thermal management unit, and a radiator. Thermal load management and other relevant aspects of the system (such as power requirements and system mass) are considered. The 50-kW power module described includes the highest available efficiency of LD M-MOPA system to date. However, the overall efficiency of three amplifier stages, including the coupling efficiency, turns out to be 55.5 percent. Though a chain of PA stages generates a high-power coherent beam, there is a penalty due to the coupling loss between stages. The specific power of the 50-kW module using solar power is 6.58 W/kg.

  4. Monolithically integrated Ge CMOS laser

    Science.gov (United States)

    Camacho-Aguilera, Rodolfo

    2014-02-01

    Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm2. Improvements in Ge work

  5. Magnetism-Enhanced Monolith-Based In-Tube Solid Phase Microextraction.

    Science.gov (United States)

    Mei, Meng; Huang, Xiaojia; Luo, Qing; Yuan, Dongxin

    2016-02-02

    Monolith-based in-tube solid phase microextraction (MB/IT-SPME) has received wide attention because of miniaturization, automation, expected loading capacity, and environmental friendliness. However, the unsatisfactory extraction efficiency becomes the main disadvantage of MB/IT-SPME. To overcome this circumstance, magnetism-enhanced MB/IT-SPME (ME-MB/IT-SPME) was developed in the present work, taking advantage of magnetic microfluidic principles. First, modified Fe3O4 nanoparticles were mixed with polymerization solution and in situ polymerized in the capillary to obtain a magnetic monolith extraction phase. After that, the monolithic capillary column was placed inside a magnetic coil that allowed the exertion of a variable magnetic field. The effects of intensity of magnetic field, adsorption and desorption flow rate, volume of sample, and desorption solvent on the performance of ME-MB/IT-SPME were investigated in detail. The analysis of six steroid hormones in water samples by the combination of ME-MB/IT-SPME with high-performance liquid chromatography with diode array detection was selected as a paradigm for the practical evaluation of ME-MB/IT-SPME. The application of a controlled magnetic field resulted in an obvious increase of extraction efficiencies of the target analytes between 70% and 100%. The present work demonstrated that application of different magnetic forces in adsorption and desorption steps can effectively enhance extraction efficiency of MB/IT-SPME systems.

  6. A Monolithically Integrated 12V/5V Switch-Capacitor DC-DC Converter

    Institute of Scientific and Technical Information of China (English)

    耿莉; 陈治明; 刘先锋

    2000-01-01

    A monolithically integrated 12V/SV switch capacitor DC-DC converter with structure-simplified main circuit and control circuit is presented. Its topological circuit and basic operating principle are discussed in detail. It is shown that elevated operating frequency, increased capacitance and reduced turn-on voltage of the diodes can make the converter's output characteristics improved. Reducing resistance of the equivalent resistors and other parasitic parameters can make the operation frequency higher. As a feasible efficient method to fabricate monolithically integrated converter with high frequency and high output power, several basic circuits are parallelly combined where the serial-parallel capacitance is optimized for the maximum output power. The device selection and its fabrication method are presented. A feasible integration process and its corresponding layout are designed. All active devices including switching transistors and diodes are integrated together with all passive cells including capacitors and resistor on a single chip based on BiMOS process,as has been verified to be correct and practical by simulation and chip test.

  7. Terahertz Diode Development

    Science.gov (United States)

    2009-03-23

    Gunn Diode , Negative Differential Resistance, Ballistic Transport, GaN, THz, Co-planar Resonator 16. SECURITY CLASSIFICATION OF: REPORT U b...Report DATES COVERED (From - Jo) 1 January 2004- 31 December 2008 4. TITLE AND SUBTITLE Terahertz Diode Development 5a. CONTRACT NUMBER N00014...current-voltage oscillations at the terminals of the diode at a frequency which is, to first order, determined by the average transit time of the EAL

  8. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  9. The problem of the open safety pin.

    Science.gov (United States)

    Marsh, B R

    1975-01-01

    The open safety pin lodged in the stomach or esophagus presents a challenge to surgical judgment and technical skill. Most foreign bodies causing trouble lodge in the esophagus. Once in the stomach, uneventful passage can be expected in 80 to 90% of cases. Active intervention is reserved for those where intestinal performation is likely or where there is failure to progress. We have used the fiberesophagoscope to remove three open safety pins from the stomachs of two patients whose symptoms and threat of perforation required intervention. The microbiopsy forceps was used successfully to retrieve the open pins, but a newly developed grasping forceps for use with the fiberesophagoscope now provides a more secure hold on such foreign bodies. Rigid instruments retain their value for selected cases, but the flexible equipment now provides an important advance in the management of the open safety pin in the stomach.

  10. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  11. Flux pinning in superconductors. 2. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Teruo [Kyushu Institute of Technology, Iizuka, Fukuoka (Japan). Dept. of Computer Science and Electronics

    2014-04-01

    Ideal for graduate students studying superconductivity and experts alike. Written by a researcher with more than 30 years experience in the field. All chapters are completely revised. The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of superconductor, specimen size and electric field strength. Recent developments of critical current properties in various high-Tc superconductors and MgB2 are introduced. Other topics are: singularity in the case of transport current in a parallel magnetic field such as deviation from the Josephson relation, reversible flux motion inside pinning potentials which causes deviation from the critical state model prediction, the concept of the minimization of energy dissipation in the flux pinning phenomena which gives the basis for the critical state model, etc. Significant reduction in the AC loss in AC wires with very fine filaments originates from the reversible flux motion which is dominant in the two-dimensional pinning. The concept of minimum energy dissipation explains also the behavior

  12. Anisotropic flux pinning in high Tc superconductors

    Science.gov (United States)

    Koleśnik, S.; Igalson, J.; Skośkiewicz, T.; Szymczak, R.; Baran, M.; Pytel, K.; Pytel, B.

    1995-02-01

    In this paper we present a comparison of the results of FC magnetization measurements on several PbSr(Y,Ca)CuO crystals representing various levels of flux pinning. The pinning centers in our crystals have been set up during the crystal growth process or introduced by neutron irradiation. Some possible explanations of the observed effects, including surface barrier, flux-center distribution and sample-shape effects, are discussed.

  13. Open safety pin in the nasal cavity.

    Science.gov (United States)

    Sen, I; Sikder, B; Sinha, R; Paul, R

    2004-04-01

    Foreign bodies in the nasal cavity are common-day occurrences in Otolaryngologic practice. But an open safety pin in nose with it' s sharp end directed towards roof is a rare incidence, and available literature is silent about this presentation; it is probably, the first of it' s kind being reported. Two cases of safety pins inside the nasal cavity, one open and the other closed, have been presented here with a brief review of literature.

  14. Open safety pin in the nasal cavity

    OpenAIRE

    Sen, I; Sikder, B.; R. Sinha; Paul, R

    2004-01-01

    Foreign bodies in the nasal cavity are common-day occurrences in Otolaryngologic practice. But an open safety pin in nose with it’ s sharp end directed towards roof is a rare incidence, and available literature is silent about this presentation; it is probably, the first of it’ s kind being reported. Two cases of safety pins inside the nasal cavity, one open and the other closed, have been presented here with a brief review of literature.

  15. IMp: The customizable LEGO® Pinned Insect Manipulator

    Directory of Open Access Journals (Sweden)

    Steen Dupont

    2015-02-01

    Full Text Available We present a pinned insect manipulator (IMp constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  16. Memory-only selection of dictionary PINs

    OpenAIRE

    Stanek, Martin

    2014-01-01

    We estimate the security of dictionary-based PINs (Personal Identification Numbers) that a user selects from his/her memory without any additional aids. The estimates take into account the distribution of words in source language. We use established security metrics, such as entropy, guesswork, marginal guesswork and marginal success rate. The metrics are evaluated for various scenarios -- aimed at improving the security of the produced PINs. In general, plain and straightforward construction...

  17. The pinning effect in quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Monisha, P. J., E-mail: pjmonisha@gmail.com [School of Physics, University of Hyderabad, Hyderabad-500046 (India); Mukhopadhyay, Soma [Department of Physics, D V R College of Engineering and Technology, Hyderabad-502285 (India)

    2014-04-24

    The pinning effect is studied in a Gaussian quantum dot using the improved Wigner-Brillouin perturbation theory (IWBPT) in the presence of electron-phonon interaction. The electron ground state plus one phonon state is degenerate with the electron in the first excited state. The electron-phonon interaction lifts the degeneracy and the first excited states get pinned to the ground state plus one phonon state as we increase the confinement frequency.

  18. Study on contact pressure at pin connection detail; Pin setsugobu no sesshokuatsu ni taisuru kosatsu

    Energy Technology Data Exchange (ETDEWEB)

    Miki, C.; Anami, K. [Tokyo Institute of Technology, Tokyo (Japan); Suzuki, M. [Ministry of Construction, Tokyo (Japan); Ohashi, H. [Honshu-Shikoku Bridge Authority, Tokyo (Japan)

    1997-07-21

    Contact pressure between pin and pin plate is discussed by FEM and UT from the point of view of the connection detail of hanger lope of long span suspension bridge. Application of the UT to the 25S surface specimen (and smoother surface) is effective. The results of UT and FEM distribution of contact pressure near the center of plate almost agree with the Hertz law. However near the surface of pin plate the contact pressure and plate width of large contact pressure region increase larger than those near contact pressure and plate width of large contact pressure region increase larger than those near center of pin plate. 12 refs., 17 figs.

  19. Modified monolithic silica capillary for preconcentration of catecholamines

    Institute of Scientific and Technical Information of China (English)

    Wei Chang; Tusyo-shi Komazu

    2009-01-01

    Preconcentration of catecholamines by the modified monolithic silica in the capillary was investigated in this study. In order to achieve a microchip-based method for determining catecholamines in the saliva, the monolithic silica was fabricated in the capillary and the monolithic silica was chemically modified by on-column reaction with phenylboronate. Different modified methods were compared. The concentration conditions were optimized. This study indicates the applicability of the modified monolithic silica capillary when it was used to concentrate catecholamines.

  20. Modified monolithic silica capillary for preconcentration of catecholamines

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Preconcentration of catecholamines by the modified monolithic silica in the capillary was investigated in this study. In order to achieve a microchip-based method for determining catecholamines in the saliva,the monolithic silica was fabricated in the capillary and the monolithic silica was chemically modified by on-column reaction with phenylboronate. Different modified methods were compared. The concentration conditions were optimized. This study indicates the applicability of the modified monolithic sili...

  1. Fracture resistance of monolithic zirconia molar crowns with reduced thickness

    OpenAIRE

    Nakamura, Keisuke; Harada, A.; Inagaki, R.; Kanno, Taro; Niwano, Y; Milleding, Percy; Ørtengren, Ulf Thore

    2015-01-01

    This is the accepted manuscript version. Published version is available at Acta Odontologica Scandinavica Objectives. The purpose of the present study was to analyze the relationship between fracture load of monolithic zirconia crowns and axial/occlusal thickness, and to evaluate the fracture resistance of monolithic zirconia crowns with reduced thickness in comparison with that of monolithic lithium disilicate crowns with regular thickness. Materials and methods. Monolithic zi...

  2. Improved pinning by multiple in-line damage

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Sawh, Ravi-Persad [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Gandini, Alberto [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Parks, Drew [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States)

    2005-02-01

    Columnar pinning centres provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinnable field, B{sub pin}. Characteristics of ion-generated columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of the percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centres limit B{sub pin} to less than 4 T, and also severely reduce J{sub c}. The goal of maximizing U{sub pin}, via columnar centres, appears to have obscured a more rewarding approach and resulted in neglect of a large regime of ion interactions. Evidence is reviewed that multiple in-line damage (MILD), described herein, can provide orders of magnitude higher J{sub c} and B{sub pin}, despite providing lower U{sub pin}. The MILD pinning centre morphology is discussed, and it is estimated that for present-day large grain high T{sub c} superconductors, a J{sub c} value of {approx}10{sup 6}Acm{sup -2} is obtainable at 77 K, even when crystal plane alignment and weak links are not improved. In addition, the pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these calculations, directly compare MILD pinning to continuous columnar pinning, and determine the optimum MILD structure. Applications of MILD pinning are discussed.

  3. Modulation of Frequency Doubled DFB-Tapered Diode Lasers for Medical Treatment

    DEFF Research Database (Denmark)

    Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

    2017-01-01

    The use of visible lasers for medical treatments is on the rise, and together with this comes higher expectations for the laser systems. For many medical treatments, such as ophthalmology, doctors require pulse on demand operation together with a complete extinction of the light between pulses. We...... have demonstrated power modulation from 0.1 Hz to 10 kHz at 532 nm with a modulation depth above 97% by wavelength detuning of the laser diode. The laser diode is a 1064 nm monolithic device with a distributed feedback (DFB) laser as the master oscillator (MO), and a tapered power amplifier (PA...

  4. Development of a monolithic ferrite memory array

    Science.gov (United States)

    Heckler, C. H., Jr.; Bhiwandker, N. C.

    1972-01-01

    The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

  5. Carbon Fiber Composite Monoliths as Catalyst Supports

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL; Gallego, Nidia C [ORNL; Pickel, Joseph M [ORNL; Blom, Douglas Allen [ORNL; Burchell, Timothy D [ORNL

    2006-01-01

    Carbon fiber composite monoliths are rigid bodies that can be activated to a large surface area, have tunable porosity, and proven performance in gas separation and storage. They are ideal as catalyst supports in applications where a rigid support, with open structure and easy fluid access is desired. We developed a procedure for depositing a dispersed nanoparticulate phase of molybdenum carbide (Mo2C) on carbon composite monoliths in the concentration range of 3 to 15 wt% Mo. The composition and morphology of this phase was characterized using X-ray diffraction and electron microscopy, and a mechanism was suggested for its formation. Molybdenum carbide is known for its catalytic properties that resemble those of platinum group metals, but at a lower cost. The materials obtained are expected to demonstrate catalytic activity in a series of hydrocarbon reactions involving hydrogen transfer. This project demonstrates the potential of carbon fiber composite monoliths as catalyst supports.

  6. Carbon Fiber Composite Monoliths for Catalyst Supports

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL; Gallego, Nidia C [ORNL; Pickel, Joseph M [ORNL; Blom, Douglas Allen [ORNL; Burchell, Timothy D [ORNL

    2006-01-01

    Carbon fiber composite monoliths are rigid bodies that can be activated to a large surface area, have tunable porosity, and proven performance in gas separation and storage. They are ideal as catalyst supports in applications where a rigid support, with open structure and easy fluid access is desired. We developed a procedure for depositing a dispersed nanoparticulate phase of molybdenum carbide (Mo2C) on carbon composite monoliths in the concentration range of 3 to 15 wt% Mo. The composition and morphology of this phase was characterized using X-ray diffraction and electron microscopy, and a mechanism was suggested for its formation. Molybdenum carbide is known for its catalytic properties that resemble those of platinum group metals, but at a lower cost. The materials obtained are expected to demonstrate catalytic activity in a series of hydrocarbon reactions involving hydrogen transfer. This project demonstrates the potential of carbon fiber composite monoliths as catalyst supports.

  7. Physical and chemical sensing using monolithic semiconductor optical transducers

    Science.gov (United States)

    Zappe, Hans P.; Hofstetter, Daniel; Maisenhoelder, Bernd; Moser, Michael; Riel, Peter; Kunz, Rino E.

    1997-09-01

    We present two monolithically integrated optical sensor systems based on semiconductor photonic integrated circuits. These compact, robust and highly functional transducers perform all necessary optical and electro-optical functions on-chip; extension to multi-sensor arrays is easily envisaged. A monolithic Michelson interferometer for high-resolution displacement measurement and a monolithic Mach-Zehnder interferometer for refractometry are discussed.

  8. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  9. Increased thermal conductivity monolithic zeolite structures

    Science.gov (United States)

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  10. Characterization of CIM monoliths as enzyme reactors.

    Science.gov (United States)

    Vodopivec, Martina; Podgornik, Ales; Berovic, Marin; Strancar, Ales

    2003-09-25

    The immobilization of the enzymes citrate lyase, malate dehydrogenase, isocitrate dehydrogenase and lactate dehydrogenase to CIM monolithic supports was performed. The long-term stability, reproducibility, and linear response range of the immobilized enzyme reactors were investigated along with the determination of the kinetic behavior of the enzymes immobilized on the CIM monoliths. The Michaelis-Menten constant K(m) and the turnover number k(3) of the immobilized enzymes were found to be flow-unaffected. Furthermore, the K(m) values of the soluble and immobilized enzyme were found to be comparable. Both facts indicate the absence of a diffusional limitation in immobilized CIM enzyme reactors.

  11. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  12. Performance comparison of pin fin in-duct flow arrays with various pin cross-sections

    Energy Technology Data Exchange (ETDEWEB)

    Sahiti, N. [LSTM-Erlangen, Institute of Fluid Mechanics, Friedrich-Alexander-University, Erlangen-Nuremberg, Cauerstr. 4, D-91058 Erlangen (Germany)]. E-mail: sahiti@lstm.uni-erlangen.de; Lemouedda, A. [Department of Process Engineering, Georg-Simon-Ohm University of Applied Sciences, Wassertorstr. 10, D-90489 Nuremberg (Germany); Stojkovic, D. [LSTM-Erlangen, Institute of Fluid Mechanics, Friedrich-Alexander-University, Erlangen-Nuremberg, Cauerstr. 4, D-91058 Erlangen (Germany); Durst, F. [LSTM-Erlangen, Institute of Fluid Mechanics, Friedrich-Alexander-University, Erlangen-Nuremberg, Cauerstr. 4, D-91058 Erlangen (Germany); Franz, E. [Department of Process Engineering, Georg-Simon-Ohm University of Applied Sciences, Wassertorstr. 10, D-90489 Nuremberg (Germany)

    2006-08-15

    Pin fin arrays are frequently used for cooling of high thermal loaded electronic components. Whereas the pin fin accomplishment regarding heat transfer is always higher than that of other fin configurations, the high pressure drop accompanying pins seriously reduces their overall performance. In order to check how the form of pin cross-section influences the pressure drop and heat transfer capabilities, six forms of pin cross-section were numerically investigated. By employing the conjugate heat transfer boundary conditions, numerical simulations close to realistic working conditions were performed. Two geometric comparison criteria were applied so that the conclusions derived from numerical computations were valid for various possible geometric parameters and working conditions. Both staggered and inline pin arrangements were investigated as these are common in practical applications. The heat transfer and pressure drop characteristics are presented in terms of appropriate dimensionless variables. The final judgment of the performance of the pin fin cross-section was performed based on the heat exchanger performance plot. Such a plot allows the assessment of the pin performance including their heat transfer and the pressure drop.

  13. Negative feedback avalanche diode

    Science.gov (United States)

    Itzler, Mark Allen (Inventor)

    2010-01-01

    A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.

  14. Dynamics and Stability of Pinned-Clamped and Clamped-Pinned Cylindrical Shells Conveying Fluid

    Science.gov (United States)

    Misra, A. K.; Wong, S. S. T.; Païdoussis, M. P.

    2001-11-01

    The paper examines the dynamics and stability of fluid-conveying cylindrical shells having pinned-clamped or clamped-pinned boundary conditions, where ``pinned'' is an abbreviation for ``simply supported''. Flügge's equations are used to describe the shell motion, while the fluid-dynamic perturbation pressure is obtained utilizing the linearized potential flow theory. The solution is obtained using two methods - the travelling wave method and the Fourier-transform approach. The results obtained by both methods suggest that the negative damping of the clamped-pinned systems and positive damping of the pinned-clamped systems, observed by previous investigators for any arbitrarily small flow velocity, are simply numerical artefacts; this is reinforced by energy considerations, in which the work done by the fluid on the shell is shown to be zero. Hence, it is concluded that both systems are conservative.

  15. Constant capacitance in nanopores of carbon monoliths.

    Science.gov (United States)

    García-Gómez, Alejandra; Moreno-Fernández, Gelines; Lobato, Belén; Centeno, Teresa A

    2015-06-28

    The results obtained for binder-free electrodes made of carbon monoliths with narrow micropore size distributions confirm that the specific capacitance in the electrolyte (C2H5)4NBF4/acetonitrile does not depend significantly on the micropore size and support the foregoing constant result of 0.094 ± 0.011 F m(-2).

  16. Potential of pin-by-pin SPN calculations as an industrial reference

    Energy Technology Data Exchange (ETDEWEB)

    Fliscounakis, M.; Girardi, E.; Courau, T.; Couyras, D. [EDF R and D/Sinetics, 1 av du General de Gaulle, F92141 Clamart Cedex (France)

    2012-07-01

    This paper aims at analysing the potential of pin-by-pin SP{sub n} calculations to compute the neutronic flux in PWR cores as an alternative to the diffusion approximation. As far as pin-by-pin calculations are concerned, a SPH equivalence is used to preserve the reactions rates. The use of SPH equivalence is a common practice in core diffusion calculations. In this paper, a methodology to generalize the equivalence procedure in the SP{sub n} equations context is presented. In order to verify and validate the equivalence procedure, SP{sub n} calculations are compared to 2D transport reference results obtained with the APOLL02 code. The validation cases consist in 3x3 analytical assembly color sets involving burn-up heterogeneities, UOX/MOX interfaces, and control rods. Considering various energy discretizations (up to 26 groups) and flux development orders (up to 7) for the SP{sub n} equations, results show that 26-group SP{sub 3} calculations are very close to the transport reference (with pin production rates discrepancies < 1%). This proves the high interest of pin-by-pin SP{sub n} calculations as an industrial reference when relying on 26 energy groups combined with SP{sub 3} flux development order. Additionally, the SP{sub n} results are compared to diffusion pin-by-pin calculations, in order to evaluate the potential benefit of using a SP{sub n} solver as an alternative to diffusion. Discrepancies on pin-production rates are less than 1.6% for 6-group SP{sub 3} calculations against 3.2% for 2-group diffusion calculations. This shows that SP{sub n} solvers may be considered as an alternative to multigroup diffusion. (authors)

  17. A double tuned rail damper—increased damping at the two first pinned-pinned frequencies

    Science.gov (United States)

    Maes, J.; Sol, H.

    2003-10-01

    Railway-induced vibrations are a growing matter of environmental concern. The rapid development of transportation, the increase of vehicle speeds and vehicle weights have resulted in higher vibration levels. In the meantime vibrations that were tolerated in the past are now considered to be a nuisance. Numerous solutions have been proposed to remedy these problems. The majority only acts on a specific part of the dynamic behaviour of the track. This paper presents a possible solution to reduce the noise generated by the 'pinned-pinned' frequencies. Pinned-pinned frequencies correspond with standing waves whose nodes are positioned exactly at the sleeper supports. The two first pinned-pinned frequencies are situated approximately at 950 and 2200 Hz (UIC60-rail and sleeper spacing of 0.60 m). To attenuate these vibrations, the Department of MEMC at the VUB has developed a dynamic vibration absorber called the Double Tuned Rail Damper (DTRD). The DTRD is mounted between two sleepers on the rail and is powered by the motion of the rail. The DTRD consists of two major parts: a steel plate which is connected to the rail with an interface of an elastic layer, and a rubber mass. The two first resonance frequencies of the steel plate coincide with the targeted pinned-pinned frequencies of the rail. The rubber mass acts as a motion controller and energy absorber. Measurements at a test track of the French railway company (SNCF) have shown considerable attenuation of the envisaged pinned-pinned frequencies. The attenuation rate surpasses 5 dB/m at certain frequency bands.

  18. Statistics of dislocation pinning at localized obstacles

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, A. [S. N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098 (India); Bhattacharya, M., E-mail: mishreyee@vecc.gov.in; Barat, P. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064 (India)

    2014-10-14

    Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

  19. Radon measurements with a PIN photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Martin, A. [Laboratorio de Investigacion en Baja Radiactividad (LIBRA), Edificio I-D, Campus Miguel Delibes, Universidad de Valladolid, Valladolid 47011 (Spain) and Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, Valladolid 47011 (Spain)]. E-mail: alonsomm@libra.uva.es; Gutierrez-Villanueva, J.L. [Laboratorio de Investigacion en Baja Radiactividad (LIBRA), Edificio I-D, Campus Miguel Delibes, Universidad de Valladolid, Valladolid 47011 (Spain); Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, Valladolid 47011 (Spain); Munoz, J.M. [Departamento de Electricidad y Electronica, Universidad de Valladolid, Valladolid 47011 (Spain); Garcia-Talavera, M. [Laboratorio de Investigacion en Baja Radiactividad (LIBRA), Edificio I-D, Campus Miguel Delibes, Universidad de Valladolid, Valladolid 47011 (Spain); Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, Valladolid 47011 (Spain); Adamiec, G. [Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, Valladolid 47011 (Spain); Iniguez, M.P. [Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, Valladolid 47011 (Spain)

    2006-10-15

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by {sup 218}Po and {sup 214}Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations.

  20. The effect of temperature on pinning mechanisms in HTS composites

    Science.gov (United States)

    Sotnikova, A. P.; Rudnev, I. A.

    2016-09-01

    Pinning mechanism in samples of second generation tapes (2G) of high-temperature superconductors (HTS) was studied The critical current and the pinning force were calculated from the magnetization curves measured in the temperature range of 4.2 - 77 K in magnetic fields up to 14 Tesla using vibration sample magnetometer. To determine the pinning mechanism the dependences of pinning force on magnetic field were constructed according to the Dew-Hughes model and Kramer's rule. The obtained dependences revealed a significant influence of the temperature on effectiveness of different types of pinning. At low temperatures the 2G HTS tapes of different manufacturers demonstrated an equal efficiency of the pinning centers but with temperature increase the differences in pinning mechanisms as well as in properties and effectiveness of the pinning centers become obvious. The influence of the pinning mechanism on the energy losses in HTS tapes was shown.

  1. Compact high brightness diode laser emitting 500W from a 100μm fiber

    Science.gov (United States)

    Heinemann, Stefan; Fritsche, Haro; Kruschke, Bastian; Schmidt, Torsten; Gries, Wolfgang

    2013-02-01

    High power, high brightness diode lasers are beginning to compete with solid state lasers, i.e. disk and fiber lasers. The core technologies for brightness scaling of diode lasers are optical stacking and dense spectral combining (DSC), as well as improvements of the diode material. Diode lasers have the lowest cost of ownership, highest efficiency and most compact design among all lasers. Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. Multiple single emitters, each rated at 12 W, are stacked in the fast axis with a monolithic slow axis collimator (SAC) array. Volume Bragg Gratings (VBG) stabilizes the wavelength and narrow the linewidth to less than 1 nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. Subsequently polarization multiplexing generates 450 W with a beam quality of 4.5 mm*mrad. Fast control electronics and miniaturized switched power supplies enable pulse rise times of less than 10 μs, with pulse widths continuously adjustable from 20 μs to cw. Further power scaling up to multi-kilowatts can be achieved by multiplexing up to 16 channels. The power and brightness of these systems enables the use of direct diode lasers for cutting and welding. The technologies can be transferred to other wavelengths to include 793 nm and 1530 nm. Optimized spectral combining enables further improvements in spectral brightness and power.

  2. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  3. Termination of pinned spirals by local stimuli

    Science.gov (United States)

    Chen, Jiang-Xing; Guo, Ming-Ming; Ma, Jun

    2016-02-01

    The termination of pinned spirals on a defect by means of local stimuli is studied. On a completely unexcitable defect, the elimination process is discussed and its corresponding mechanism is presented. Especially, the mechanism of unpinning spirals on a partially unexcitable defect, which has not been investigated so far, is explored. With fixed pacing frequency ω L , there exists a maximal radius R max above which the pinned spiral cannot be removed. It is found that the value of R max does not increase as ω L in a dynamical regime, forming a platform in the R\\textit{max}\\text-ωL curves. Based on analyzing the dispersion relation on the spiral tip around the obstacle, the underlying mechanism is clarified. Also, it is found that when multiple spirals are pinned, the value of R max decreases on a partially unexcitable defect while the change is very slight on a completely unexcitable one.

  4. Effective pinning energy landscape perturbations for propagating magnetic domain walls

    Science.gov (United States)

    Burn, D. M.; Atkinson, D.

    2016-01-01

    The interaction between a magnetic domain wall and a pinning site is explored in a planar nanowire using micromagnetics to reveal perturbations of the pinning energetics for propagating domain walls. Numerical simulations in the high damping ’quasi-static’ and low damping ’dynamic’ regimes are compared and show clear differences in de-pinning fields, indicating that dynamical micromagnetic models, which incorporate precessionally limited magnetization processes, are needed to understand domain wall pinning. Differences in the micromagnetic domain wall structure strongly influence the pinning and show periodic behaviour with increasing applied field associated with Walker breakdown. In the propagating regime pinning is complicated. PMID:27694953

  5. Broken safety pin in bronchus - Anaesthetic considerations

    Directory of Open Access Journals (Sweden)

    Roona Shad

    2012-01-01

    Full Text Available Safety pins are not commonly aspirated objects in infants and form only a small fraction of all the metallic foreign body (FB which accounts for 4.4% of all foreign bodies found in tracheobronchial tree. Bronchoscopy procedure has various complications, in addition to failure to remove FB due to its impaction, especially with metallic pointed objects ending up in open surgical removal. Infant with inhaled foreign body are always a challenge to anaesthetist. We had one such case of broken safety pin impacted in the wall of right bronchus of an infant with failure to remove on repeated attempts at rigid bronchoscopy.

  6. Broken safety pin in bronchus - Anaesthetic considerations.

    Science.gov (United States)

    Shad, Roona; Agarwal, Aditya

    2012-11-01

    Safety pins are not commonly aspirated objects in infants and form only a small fraction of all the metallic foreign body (FB) which accounts for 4.4% of all foreign bodies found in tracheobronchial tree. Bronchoscopy procedure has various complications, in addition to failure to remove FB due to its impaction, especially with metallic pointed objects ending up in open surgical removal. Infant with inhaled foreign body are always a challenge to anaesthetist. We had one such case of broken safety pin impacted in the wall of right bronchus of an infant with failure to remove on repeated attempts at rigid bronchoscopy.

  7. Self-Pinning on a Liquid Surface.

    Science.gov (United States)

    Antoine, C; Irvoas, J; Schwarzenberger, K; Eckert, K; Wodlei, F; Pimienta, V

    2016-02-04

    We report on the first experimental evidence of a self-pinning liquid drop on a liquid surface. This particular regime is observed for a miscible heavier oil drop (dichloromethane) deposited on an aqueous solution laden by an ionic surfactant (hexadecyltrimethylammonium bromide). Experimental characterization of the drop shape evolution coupled to particle image velocimetry points to the correlation between the drop profile and the accompanying flow field. A simple model shows that the observed pinned stage is the result of a subtle competition between oil dissolution and surfactant adsorption.

  8. New types of high field pinning centers and pinning centers for the peak effect

    Science.gov (United States)

    Gajda, Daniel; Zaleski, Andrzej; Morawski, Andrzej; Hossain, Md Shahriar A.

    2017-08-01

    In this article, we report the results of a study that shows the existence of pinning centers inside grains and between grains in NbTi wires. We accurately show the ranges of magnetic fields in which the individual pinning centers operate. The pinning centers inside grains are activated in high magnetic fields above 6 T. We show the range of magnetic fields in which individual defects, dislocations, precipitates inside grains and substitutions in the crystal lattice can operate. We show the existence of a new kind of high field pinning center, which operates in high magnetic fields from 8 to ˜9.5 T. We indicate that dislocations create pinning centers in the range of magnetic fields from 6 to 8 T. In addition, our measurements suggest that the peak effect (increased critical current density (J c) near the upper critical field (B c2)) could be attributed to martensitic (needle-shaped) α‧-Ti inclusions inside grains. These centers are very important because they work very effectively in magnetic fields above 9.5-10 T. We also show that the α-Ti precipitates (between grains) with a thickness similar to the coherence length create pinning centers which work very effectively in magnetic fields from 3 to 6 T. In magnetic fields below 3 T, they act very efficiently in grain boundaries. The measurements indicate that the pinning centers created by dislocations only can be tested by transport measurements. This indicates that dislocations do not increase the magnetic critical current density (J cm). Cold drawing improves pinning centers at grain boundaries and increases the dislocation density, and cold-drawing pinning centers are responsible for the peak effect.

  9. Effect of the number of pins and inter-pin distance on somatosensory evoked magnetic fields following mechanical tactile stimulation.

    Science.gov (United States)

    Onishi, Hideaki; Sugawara, Kazuhiro; Yamashiro, Koya; Sato, Daisuke; Suzuki, Makoto; Kirimoto, Hikari; Tamaki, Hiroyuki; Murakami, Hiroatsu; Kameyama, Shigeki

    2013-10-16

    Magnetoencephalography (MEG) recordings were collected to investigate the effect of the number of mechanical pins and inter-pin distance on somatosensory evoked magnetic fields (SEFs) following mechanical stimulation (MS). We used a 306-ch whole-head MEG system. SEFs were elicited through tactile stimuli with 1-, 2-, 3-, 4- and 8-pins using healthy participants. Tactile stimuli were applied to the tip of the right index finger. SEF following electrical stimulation of the index finger was recorded in order to compare the activity in the primary somatosensory cortex (S1) following MS. Prominent SEFs were recorded from the contralateral hemisphere approximately 54 ms (P50m) and 125 ms (P100m) after MS regardless of the number of pins. Equivalent current dipoles were located in the S1. The source activities for P50m and P100m significantly increased in tandem with the number of pins for MS. However, the increased ratios for the source activities according to the increase in the number of pins were significantly smaller than that induced by electrical stimulation, and when the number of the pins doubled from 1-pin to 2-pins, from 2-pins to 4-pins, and from 4-pins to 8-pins, S1 activities increased by only 130%. Additionally, source activities significantly increased when the inter-pin distance increased from 2.4 to 7.2 mm. The number of stimulated receptors was considered to have increased with an increase in the inter-pin distance as well as an increase in the number of pins. These findings clarified the effect of the number of pins and inter-pin distance for MS on SEFs.

  10. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  11. Chemically Modulated Graphene Diodes

    OpenAIRE

    Kim, Hye-young; Lee, Kangho; McEvoy, Niall; Yim, Chanyoung; Duesberg, Georg S.

    2013-01-01

    PUBLISHED We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocom...

  12. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  13. A pinned polymer model of posture control

    CERN Document Server

    Chow, C C; Chow, Carson C; Collins, J J

    1995-01-01

    A phenomenological model of human posture control is posited. The dynamics are modelled as an elastically pinned polymer under the influence of noise. The model accurately reproduces the two-point correlation functions of experimental posture data and makes predictions for the response function of the postural control system. The physiological and clinical significance of the model is discussed.

  14. Duodenocolic fistula due to safety pin ingestion.

    Science.gov (United States)

    Cay, Ali; Imamoğlu, Mustafa; Sarihan, Haluk; Sayil, Ozgür

    2004-01-01

    The authors describe the case of a 16-month-old boy with benign duodenocolic fistula due to safety pin ingestion who presented with abdominal pain, diarrhea and weight loss. Etiology, symptomatology, diagnosis and management are discussed and the literature is reviewed. Early diagnosis and surgical management are necessary to avoid serious morbidity.

  15. Turban pin aspiration: new fashion, new syndrome.

    Science.gov (United States)

    Ilan, Ophir; Eliashar, Ron; Hirshoren, Nir; Hamdan, Kasem; Gross, Menachem

    2012-04-01

    Turban pin aspiration syndrome is a new clinical entity afflicting young Islamic girls wearing a turban.The goal of this study was to present our experience in diagnosis and treatment of this new entity, define its clinical and epidemiologic features, and shed a new light on the role of fashion in the increased incidence. A retrospective study in a tertiary university hospital. Review of clinical parameters and epidemiologic features of 26 patients diagnosed with turban pin aspiration syndrome admitted to the Hadassah-Hebrew University Hospitals in Jerusalem from 1990 to 2010. All patients were Muslim females with an average age of 16 years. In all cases, the history was positive for accidental aspiration. Most of the pins were located in the trachea (42%). In 20 cases, the pins were extracted by rigid bronchoscopy without major complications. Fluoroscopy-assisted rigid bronchoscopy was used successfully in three cases. In one case, the object was self-ejected by coughing before the bronchoscopy, and two patients were referred to the chest unit for thoracotomy. Clinicians should be aware of this distinct form of foreign body aspiration, its method of diagnosis, and extraction techniques. A cultural investigation showed a difference in the turban-fastening technique of young girls as compared with their mothers. Removal by rigid bronchoscopy is a safe method with a high success rate and should be considered as the preferred extraction method of choice. Copyright © 2012 The American Laryngological, Rhinological, and Otological Society, Inc.

  16. Pinning control of clustered complex networks with different size

    Science.gov (United States)

    Fu, Chenbo; Wang, Jinbao; Xiang, Yun; Wu, Zhefu; Yu, Li; Xuan, Qi

    2017-08-01

    In pinning control of complex networks, it is found that, with the same pinning effort, the network can be better controlled by pinning the large-degree nodes. But in the clustered complex networks, this preferential pinning (PP) strategy is losing its effectiveness. In this paper, we demonstrate that in the clustered complex networks, especially when the clusters have different size, the random pinning (RP) strategy performs much better than the PP strategy. Then, we propose a new pinning strategy based on cluster degree. It is revealed that the new cluster pinning strategy behaves better than RP strategy when there are only a smaller number of pinning nodes. The mechanism is studied by using eigenvalue and eigenvector analysis, and the simulations of coupled chaotic oscillators are given to verify the theoretical results. These findings could be beneficial for the design of control schemes in some practical systems.

  17. A monolithic integrated photonic microwave filter

    Science.gov (United States)

    Fandiño, Javier S.; Muñoz, Pascual; Doménech, David; Capmany, José

    2016-12-01

    Meeting the increasing demand for capacity in wireless networks requires the harnessing of higher regions in the radiofrequency spectrum, reducing cell size, as well as more compact, agile and power-efficient base stations that are capable of smoothly interfacing the radio and fibre segments. Fully functional microwave photonic chips are promising candidates in attempts to meet these goals. In recent years, many integrated microwave photonic chips have been reported in different technologies. To the best of our knowledge, none has monolithically integrated all the main active and passive optoelectronic components. Here, we report the first demonstration of a tunable microwave photonics filter that is monolithically integrated into an indium phosphide chip. The reconfigurable radiofrequency photonic filter includes all the necessary elements (for example, lasers, modulators and photodetectors), and its response can be tuned by means of control electric currents. This is an important step in demonstrating the feasibility of integrated and programmable microwave photonic processors.

  18. Macroporous Monolithic Polymers: Preparation and Applications

    Directory of Open Access Journals (Sweden)

    Cecilia Inés Alvarez Igarzabal

    2009-12-01

    Full Text Available In the last years, macroporous monolithic materials have been introduced as a new and useful generation of polymers used in different fields. These polymers may be prepared in a simple way from a homogenous mixture into a mold and contain large interconnected pores or channels allowing for high flow rates at moderate pressures. Due to their porous characteristics, they could be used in different processes, such as stationary phases for different types of chromatography, high-throughput bioreactors and in microfluidic chip applications. This review reports the contributions of several groups working in the preparation of different macroporous monoliths and their modification by immobilization of specific ligands on the products for specific purposes.

  19. Monolithic pixel detectors for high energy physics

    CERN Document Server

    Snoeys, W

    2013-01-01

    Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio ( Q / C ). It is shown that monolithic detectors can achieve Q / C for low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining suf fi cient Q / C , collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.

  20. Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

    Science.gov (United States)

    Chang, Chiao; Li, Hui; Huang, Ssu-Hsuan; Lin, Li-Chien; Cheng, Hung-Hsiang

    2016-04-01

    The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13 A/cm2. We obtained no-phonon- and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni’s empirical expression with α = 4.884 × 10-4 eV/K and β = 130 K.

  1. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    Energy Technology Data Exchange (ETDEWEB)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S., E-mail: ppessoa@con.ufrj.br, E-mail: fernando@con.ufrj.br, E-mail: aquilino@imp.ufrj.br [Coordenacao dos Programas de Pos-Graduacao em Engenharia (COPPE/UFRJ), Rio de Janeiro, RJ (Brazil)

    2013-07-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  2. Pinning control of complex networked systems synchronization, consensus and flocking of networked systems via pinning

    CERN Document Server

    Su, Housheng

    2013-01-01

    Synchronization, consensus and flocking are ubiquitous requirements in networked systems. Pinning Control of Complex Networked Systems investigates these requirements by using the pinning control strategy, which aims to control the whole dynamical network with huge numbers of nodes by imposing controllers for only a fraction of the nodes. As the direct control of every node in a dynamical network with huge numbers of nodes might be impossible or unnecessary, it’s then very important to use the pinning control strategy for the synchronization of complex dynamical networks. The research on pinning control strategy in consensus and flocking of multi-agent systems can not only help us to better understand the mechanisms of natural collective phenomena, but also benefit applications in mobile sensor/robot networks. This book offers a valuable resource for researchers and engineers working in the fields of control theory and control engineering.   Housheng Su is an Associate Professor at the Department of Contro...

  3. On the development of a strength prediction methodology for fibre metal laminates in pin bearing

    Science.gov (United States)

    Krimbalis, Peter Panagiotis

    The development of Fibre Metal Laminates (FMLs) for application into aerospace structures represents a paradigm shift in airframe and material technology. By consolidating both monolithic metallic alloys and fibre reinforced composite layers, a new material structure is born exhibiting desired qualities emerging from its heterogeneous constituency. When mechanically fastened via pins, bolts and rivets, these laminated materials develop damage and ultimately fail via mechanisms that were not entirely understood and different than either their metallic or composite constituents. The development of a predictive methodology capable of characterizing how FMLs fastened with pins behave and fail would drastically reduce the amount of experimentation necessary for material qualification and be an invaluable design tool. The body of this thesis discusses the extension of the characteristic dimension approach to FMLs and the subsequent development of a new failure mechanism as part of a progressive damage finite element (FE) modeling methodology with yielding, delamination and buckling representing the central tenets of the new mechanism. This yielding through delamination buckling (YDB) mechanism and progressive FE model were investigated through multiple experimental studies. The experimental investigations required the development of a protocol with emphasis on measuring deformation on a local scheme in addition to a global one. With the extended protocol employed, complete characterization of the material response was possible and a new definition for yield in a pin bearing configuration was developed and subsequently extended to a tensile testing configuration. The performance of this yield definition was compared directly to existing definitions and was shown to be effective in both quasi-isotropic and orthotropic materials. The results of the experiments and FE simulations demonstrated that yielding (according to the new definition), buckling and delamination

  4. Update On Monolithic Fuel Fabrication Development

    Energy Technology Data Exchange (ETDEWEB)

    C. R Clark; J. M. Wight; G. C. Knighton; G. A. Moore; J. F. Jue

    2005-11-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Advancements have been made in the production of U-Mo foil including full sized foils. Progress has also been made in the friction stir welding and transient liquid phase bonding fabrication processes resulting in better bonding, more stable processes and the ability to fabricate larger fuel plates.

  5. FLUIDIZED BED STEAM REFORMER MONOLITH FORMATION

    Energy Technology Data Exchange (ETDEWEB)

    Jantzen, C

    2006-12-22

    Fluidized Bed Steam Reforming (FBSR) is being considered as an alternative technology for the immobilization of a wide variety of aqueous high sodium containing radioactive wastes at various DOE facilities in the United States. The addition of clay, charcoal, and a catalyst as co-reactants converts aqueous Low Activity Wastes (LAW) to a granular or ''mineralized'' waste form while converting organic components to CO{sub 2} and steam, and nitrate/nitrite components, if any, to N{sub 2}. The waste form produced is a multiphase mineral assemblage of Na-Al-Si (NAS) feldspathoid minerals with cage-like structures that atomically bond radionuclides like Tc-99 and anions such as SO{sub 4}, I, F, and Cl. The granular product has been shown to be as durable as LAW glass. Shallow land burial requires that the mineralized waste form be able to sustain the weight of soil overburden and potential intrusion by future generations. The strength requirement necessitates binding the granular product into a monolith. FBSR mineral products were formulated into a variety of monoliths including various cements, Ceramicrete, and hydroceramics. All but one of the nine monoliths tested met the <2g/m{sup 2} durability specification for Na and Re (simulant for Tc-99) when tested using the Product Consistency Test (PCT; ASTM C1285). Of the nine monoliths tested the cements produced with 80-87 wt% FBSR product, the Ceramicrete, and the hydroceramic produced with 83.3 wt% FBSR product, met the compressive strength and durability requirements for an LAW waste form.

  6. Monolithically integrated interferometer for optical displacement measurement

    Science.gov (United States)

    Hofstetter, Daniel; Zappe, Hans P.

    1996-01-01

    We discuss the fabrication of a monolithically integrated optical displacement sensors using III-V semiconductor technology. The device is configured as a Michelson interferometer and consists of a distributed Bragg reflector laser, a photodetector and waveguides forming a directional coupler. Using this interferometer, displacements in the 100 nm range could be measured at distances of up to 45 cm. We present fabrication, device results and characterization of the completed interferometer, problems, limitations and future applications will also be discussed.

  7. Auxin transport through PIN-FORMED 3 (PIN3) controls shade avoidance and fitness during competition

    Science.gov (United States)

    Keuskamp, Diederik H.; Pollmann, Stephan; Voesenek, Laurentius A. C. J.; Peeters, Anton J. M.; Pierik, Ronald

    2010-01-01

    Plants grow in dense vegetations at the risk of being out-competed by neighbors. To increase their competitive power, plants display adaptive responses, such as rapid shoot elongation (shade avoidance) to consolidate light capture. These responses are induced upon detection of proximate neighbors through perception of the reduced ratio between red (R) and far-red (FR) light that is typical for dense vegetations. The plant hormone auxin is a central regulator of plant development and plasticity, but until now it has been unknown how auxin transport is controlled to regulate shade-avoidance responses. Here, we show that low R:FR detection changes the cellular location of the PIN-FORMED 3 (PIN3) protein, a regulator of auxin efflux, in Arabidopsis seedlings. As a result, auxin levels in the elongating hypocotyls are increased under low R:FR. Seedlings of the pin3-3 mutant lack this low R:FR-induced increase of endogenous auxin in the hypocotyl and, accordingly, have no elongation response to low R:FR. We hypothesize that low R:FR-induced stimulation of auxin biosynthesis drives the regulation of PIN3, thus allowing shade avoidance to occur. The adaptive significance of PIN3-mediated control of shade-avoidance is shown in plant competition studies. It was found that pin3 mutants are outcompeted by wild-type neighbors who suppress fitness of pin3-3 by 40%. We conclude that low R:FR modulates the auxin distribution by a change in the cellular location of PIN3, and that this control can be of great importance for plants growing in dense vegetations. PMID:21149713

  8. An overview of monolithic zirconia in dentistry

    Directory of Open Access Journals (Sweden)

    Özlem Malkondu

    2016-07-01

    Full Text Available Zirconia restorations have been used successfully for years in dentistry owing to their biocompatibility and good mechanical properties. Because of their lack of translucency, zirconia cores are generally veneered with porcelain, which makes restorations weaker due to failure of the adhesion between the two materials. In recent years, all-ceramic zirconia restorations have been introduced in the dental sector with the intent to solve this problem. Besides the elimination of chipping, the reduced occlusal space requirement seems to be a clear advantage of monolithic zirconia restorations. However, scientific evidence is needed to recommend this relatively new application for clinical use. This mini-review discusses the current scientific literature on monolithic zirconia restorations. The results of in vitro studies suggested that monolithic zirconia may be the best choice for posterior fixed partial dentures in the presence of high occlusal loads and minimal occlusal restoration space. The results should be supported with much more in vitro and particularly in vivo studies to obtain a final conclusion.

  9. Optimization study on pin tip diameter of an impact-pin nozzle at high pressure ratio

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, C. Palani; Lee, Kwon Hee [FMTRC, Daejoo Machinery Co. Ltd., Daegu (Korea, Republic of); Park, Tae Choon; Cha, Bong Jun [Engine Components Research Team, Korea Aerospace Research Institute, Daejeon (Korea, Republic of); Kim, Heuy Dong [Dept. of Mechanical Engineering, Andong National University, Andong (Korea, Republic of)

    2016-09-15

    Wet compression system is typically installed in a gas turbine engine to increase the net power output and efficiency. A crucial component of the wet compression system is the nozzle which generates fine water droplets for injection into the compressor. The main objective of present work is to optimize a kind of nozzle called impact-pin spray nozzle and thereby produce better quality droplets. To achieve this, the dynamics occurring in the water jet impinging on the pin tip, the subsequent formation of water sheet, which finally breaks into water droplets, must be studied. In this manuscript, the progress on the numerical studies on impact-pin nozzle are reported. A small computational domain covering the orifice, pin tip and the region where primary atomization occurs is selected for numerical analysis. The governing equations are selected in three dimensional cartesian form and simulations are performed to predict the dynamics of water jet impinging on the pin. Systematic studies were carried out and the results leading to the choice of turbulence model and the effect of pin tip diameter are reported here. Further studies are proposed to show the future directions of the present research work.

  10. Nanowall pinning for enhanced pinning force in YBCO films with nanofabricated structures

    Energy Technology Data Exchange (ETDEWEB)

    Palau, A.; Rouco, V.; Luccas, R.F.; Obradors, X.; Puig, T., E-mail: teresa.puig@icmab.es

    2014-11-15

    Highlights: • High resolution lithography techniques to fabricate artificial pinning centres in high temperature superconductors. • Enhanced critical currents of YBCO films with engineered nanofabricated structures. • Controlled nano-walls with weakened superconductivity acting as strong pinning centres. - Abstract: High resolution nanofabrication tools (Focused Ion Beam and Electron Beam Lithography) have been used to fabricate nano-metric milled structures in high critical current YBCO thin films able to further increase their vortex pinning capabilities. We have demonstrated that pinning forces at 77 K and 3 T are increased by a 70–80% by proper nanostructure designs. Model systems with linear trenches and triangular blind antidots of different sizes, distribution and density have been generated and studied. We demonstrate that specific milled nanostructures can increase the total current through the system at expenses of a limited decrease of cross section. We have identified the length of fabricated nano-walls as the main parameter controlling the pinning potential of nanostructures and thus defined the optimised milling conditions and nanostructure morphology to maximise pinning efficiency.

  11. Preparation of imprinted monolithic column under molecular crowding conditions

    Institute of Scientific and Technical Information of China (English)

    Xiao Xia Li; Xin Liu; Li Hong Bai; Hong Quan Duan; Yan Ping Huang; Zhao Sheng Liu

    2011-01-01

    Molecular crowding is a new concept to obtain molecularly imprinted polymers (MIPs) with greater capacity and selectivity. In this work, molecular crowding agent was firstly applied to the preparation of MIPs monolithic column. A new polymerization system based on molecular crowding surrounding was developed to prepare enrofloxacin-imprinted monolith, which was composed of polystyrene and tetrahydrofuran. The result showed that the monolithic MIPs under molecular crowding conditions presented good molecular recognition for enrofloxacin with an imprinting factor of 3.03.

  12. Efficient monolithic MgO:LiNbO3 singly resonant optical parametric oscillator

    Science.gov (United States)

    Kozlovsky, W. J.; Gustafson, E. K.; Eckardt, R. C.; Byer, R. L.

    1988-01-01

    A monolithic MgO:LiNbO3 singly resonant optical parametric oscillator (OPO) was operated as both a standing-wave and a ring-geometry resonator. The OPO was pumped by the second harmonic of an amplified single-mode diode-laser-pumped Nd:YAG laser. Pump depletions of greater than 60 percent were observed when pumping four times greater than the 35-W threshold. The OPO output at the resonant signal tuned with temperature from 834 to 958 nm, while the corresponding idler tuned from 1.47 to 1.2 microns. The spectral characteristics of the OPO signal output and the relative merits of a standing wave versus a ring geometry are discussed.

  13. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  14. Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

    KAUST Repository

    Xu, Sheng

    2010-04-28

    A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order often thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

  15. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    Science.gov (United States)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-09-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  16. Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

    Science.gov (United States)

    Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

    1989-01-01

    A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

  17. Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

    Science.gov (United States)

    Lotfi, Y.; Zaki Dizaji, H.; Abbasi Davani, F.

    2014-06-01

    Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241Am-Be source.

  18. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  19. Monolithic Lumped Element Integrated Circuit (M2LEIC) Transistors.

    Science.gov (United States)

    INTEGRATED CIRCUITS, *MONOLITHIC STRUCTURES(ELECTRONICS), *TRANSISTORS, CHIPS(ELECTRONICS), FABRICATION, EPITAXIAL GROWTH, ULTRAHIGH FREQUENCY, POLYSILICONS, PHOTOLITHOGRAPHY, RADIOFREQUENCY POWER, IMPEDANCE MATCHING .

  20. Differential Roles of PIN1 and PIN2 in Root Meristem Maintenance Under Low-B Conditions in Arabidopsis thaliana.

    Science.gov (United States)

    Li, Ke; Kamiya, Takehiro; Fujiwara, Toru

    2015-06-01

    Boron (B) is an essential element for plants; its deficiency causes rapid cessation of root elongation. In addition, B influences auxin accumulation in plants. To assess the importance of auxin transport in B-dependent root elongation, Arabidopsis thaliana pin1-pin4 mutants were grown under low-B conditions. Among them, only the pin2/eir1-1 mutant showed a significantly shorter root under low-B conditions than under control conditions. Moreover, the root meristem size of pin2/eir1-1 was reduced under low-B conditions. Among the PIN-FORMED (PIN) family, PIN1 and PIN2 are important for root meristem growth/maintenance under normal conditions. To investigate the differential response of pin1 and pin2 mutants under low-B conditions, the effect of low-B on PIN1-green fluorescent protein (GFP) and PIN2-GFP accumulation and localization was examined. Low-B did not affect PIN2-GFP, while it reduced the accumulation of PIN1-GFP. Moreover, no signal from DII-VENUS, an auxin sensor, was detected under the low-B condition in the stele of wild-type root meristems. Taken together, these results indicate that under low-B conditions PIN1 is down-regulated and PIN2 plays an important role in root meristem maintenance. © The Author 2015. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.

  1. A two-stage series diode for intense large-area moderate pulsed X rays production

    Science.gov (United States)

    Lai, Dingguo; Qiu, Mengtong; Xu, Qifu; Su, Zhaofeng; Li, Mo; Ren, Shuqing; Huang, Zhongliang

    2017-01-01

    This paper presents a method for moderate pulsed X rays produced by a series diode, which can be driven by high voltage pulse to generate intense large-area uniform sub-100-keV X rays. A two stage series diode was designed for Flash-II accelerator and experimentally investigated. A compact support system of floating converter/cathode was invented, the extra cathode is floating electrically and mechanically, by withdrawing three support pins several milliseconds before a diode electrical pulse. A double ring cathode was developed to improve the surface electric field and emission stability. The cathode radii and diode separation gap were optimized to enhance the uniformity of X rays and coincidence of the two diode voltages based on the simulation and theoretical calculation. The experimental results show that the two stage series diode can work stably under 700 kV and 300 kA, the average energy of X rays is 86 keV, and the dose is about 296 rad(Si) over 615 cm2 area with uniformity 2:1 at 5 cm from the last converter. Compared with the single diode, the average X rays' energy reduces from 132 keV to 88 keV, and the proportion of sub-100-keV photons increases from 39% to 69%.

  2. Directed and diode percolation

    Science.gov (United States)

    Redner, S.

    1982-03-01

    We study the novel percolation phenomena that occur in random-lattice networks consisting of resistor-like and diode-like bonds. Resistor bonds connect or "transmit information" in either direction along their length, while diodes connect in one direction only. We first treat the special case of directed bond percolation, in which the diodes are aligned along a preferred axis. Mean-field theory shows that clusters become extremely anisotropic near the percolation transition and that their shapes are characterized by two correlation lengths, one parallel and one transverse to the preferred axis. These lengths diverge with exponents ν∥=1 and ν⊥=12, respectively, from which we can show that the upper critical dimension for this system must be five. We also treat a more general random network on the square lattice containing resistors and diodes of arbitrary orientation. Duality arguments are applied to obtain exact results for the location of phase transitions in this system. We then use a position-space renormalization-group approach to map out the phase diagram and calculate critical exponents. This system has an isotropic percolating phase, and phases which percolate in only one direction. Novel types of transitions occur between these phases, in which the diode orientation plays a fundamental role. These percolating phases meet with the nonpercolating phase along a line of multicritical points, where concentration and orientational fluctuations are simultaneously critical.

  3. A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

    Energy Technology Data Exchange (ETDEWEB)

    Misiakos, K [Microelectronics Institute, NCSR ' Demokritos' , 15310, Athens (Greece); Petrou, P S [Immunoassay Lab., I/R-RP, NCSR ' Demokritos' , 15310, Athens (Greece); Kakabakos, S E [Immunoassay Lab., I/R-RP, NCSR ' Demokritos' , 15310, Athens (Greece); Ruf, H H [Fraunhofer Institute of Biomedical Engineering (IBMT) and University of Saarland, 66386, St Ingbert (Germany); Ehrentreich-Foerster, E [Department of Molecular Bioanalytics and Bioelectronics, Fraunhofer Institute for Biomedical Engineering, D-14558 Nuthetal (Germany); Bier, F F [Department of Molecular Bioanalytics and Bioelectronics, Fraunhofer Institute for Biomedical Engineering, D-14558 Nuthetal (Germany)

    2005-01-01

    A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

  4. Microchip laser based on Yb:YAG/V:YAG monolith crystal

    Science.gov (United States)

    Nejezchleb, Karel; Šulc, Jan; Jelínková, Helena; Škoda, Václav

    2016-03-01

    V:YAG crystal was investigated as a passive Q-switch of longitudinally diode-pumped microchip laser, emitting radiation at wavelength 1030.5 nm. This laser was based on diffusion bonded monolith crystal (diameter 3 mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3 mm long) and saturable absorber (V:YAG crystal, 2 mm long, initial transmission 86 % @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces (pump mirror HT @ 968 nm and HR @ 1031 nm on Yb:YAG part, output coupler with reflection 55 % @ 1031 nm on the V:YAG part). For longitudinal CW pumping of Yb:YAG part, a fibre coupled (core diameter 100 μm, NA = 0.22, emission @ 968 nm) laser diode was used. The laser threshold was 3.8W. The laser slope efficiency for output mean in respect to incident pumping was 16 %. The linearly polarized generated transversal intensity beam profile was close to the fundamental Gaussian mode. The generated pulse length, stable and mostly independent on pumping power, was equal to 1.3 ns (FWHM). The single pulse energy was increasing with the pumping power and for the maximum pumping 9.7W it was 78 μJ which corresponds to the pulse peak-power 56 kW. The maximum Yb:YAG/V:YAG microchip laser mean output power of 1W was reached without observable thermal roll-over. The corresponding Q-switched pulses repetition rate was 13.1 kHz.

  5. High-speed charge transfer pinned-photodiode for a CMOS time-of-flight range image sensor

    Science.gov (United States)

    Takeshita, Hiroaki; Sawada, Tomonari; Iida, Tetsuya; Yasutomi, Keita; Kawahito, Shoji

    2010-01-01

    This paper presents a structure and method of range calculation for CMOS time-of-flight(TOF) range image sensors using pinned photodiodes. In the proposed method, a LED light with short pulse width and small duty ratio irradiates the objects and a back-reflected light is received by the CMOS TOF range imager.Each pixel has a pinned photodiode optimized for high speed charge transfer and unwanted charge draining. In TOF range image sensors, high speed charge transfer from the light receiving part to a charge accumulator is essential.It was found that the fastest charge transfer can be realized when the lateral electric field along the axis of charge transfer is constant and this conditon is met when the shape of the diode exactly follows the relationship between the fully-depleted potential and width. A TOF range imager prototype is designed and implemented with 0.18um CMOS image sensor technology with pinned photodiode 4transistor(T) pixels. The measurement results show that the charge transfer time is a few ns from the pinned photodiode to a charge accumulator.

  6. Genome-wide identification and evolution of the PIN-FORMED (PIN) gene family in Glycine max.

    Science.gov (United States)

    Liu, Yuan; Wei, Haichao

    2017-07-01

    Soybean (Glycine max) is one of the most important crop plants. Wild and cultivated soybean varieties have significant differences worth further investigation, such as plant morphology, seed size, and seed coat development; these characters may be related to auxin biology. The PIN gene family encodes essential transport proteins in cell-to-cell auxin transport, but little research on soybean PIN genes (GmPIN genes) has been done, especially with respect to the evolution and differences between wild and cultivated soybean. In this study, we retrieved 23 GmPIN genes from the latest updated G. max genome database; six GmPIN protein sequences were changed compared with the previous database. Based on the Plant Genome Duplication Database, 18 GmPIN genes have been involved in segment duplication. Three pairs of GmPIN genes arose after the second soybean genome duplication, and six occurred after the first genome duplication. The duplicated GmPIN genes retained similar expression patterns. All the duplicated GmPIN genes experienced purifying selection (Ka/Ks < 1) to prevent accumulation of non-synonymous mutations and thus remained more similar. In addition, we also focused on the artificial selection of the soybean PIN genes. Five artificially selected GmPIN genes were identified by comparing the genome sequence of 17 wild and 14 cultivated soybean varieties. Our research provides useful and comprehensive basic information for understanding GmPIN genes.

  7. Highly luminescent and ultrastable CsPbBr{sub 3} perovskite quantum dots incorporated into a silica/alumina monolith

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhichun; Kong, Long; Huang, Shouqiang; Li, Liang [School of Environmental Science and Engineering, Shanghai Jiao Tong University (China)

    2017-07-03

    We successfully prepared QDs incorporated into a silica/alumina monolith (QDs-SAM) by a simple sol-gel reaction of an Al-Si single precursor with CsPbBr{sub 3} QDs blended in toluene solution, without adding water and catalyst. The resultant transparent monolith exhibits high photoluminescence quantum yields (PLQY) up to 90 %, and good photostability under strong illumination of blue light for 300 h. We show that the preliminary ligand exchange of didodecyl dimethyl ammonium bromide (DDAB) was very important to protect CsPbBr{sub 3} QDs from surface damages during the sol-gel reaction, which not only allowed us to maintain the original optical properties of CsPbBr{sub 3} QDs but also prevented the aggregation of QDs and made the monolith transparent. The CsPbBr{sub 3} QDs-SAM in powder form was easily mixed into the resins and applied as color-converting layer with curing on blue light-emitting diodes (LED). The material showed a high luminous efficacy of 80 lm W{sup -1} and a narrow emission with a full width at half maximum (FWHM) of 25 nm. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2015-06-01

    Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

  9. Pinning Synchronization of One-Sided Lipschitz Complex Networks

    Directory of Open Access Journals (Sweden)

    Fang Liu

    2014-01-01

    Full Text Available This paper studies the pinning synchronization in complex networks with node dynamics satisfying the one-sided Lipschitz condition which is less conservative than the well-known Lipschitz condition. Based on M-matrix theory and Lyapunov functional method, some simple pinning conditions are derived for one-sided Lipschitz complex networks with full-state and partial-state coupling, respectively. A selective pinning scheme is further provided to address the selection of pinned nodes and the design of pinning feedback gains for one-sided Lipschitz complex networks with general topologies. Numerical results are given to illustrate the effectiveness of the theoretical analysis.

  10. A 30 Mbps in-plane full-duplex light communication using a monolithic GaN photonic circuit

    Science.gov (United States)

    Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Yuan, Wei; Zhu, Guixia; Zhu, Hongbo; Feng, Meixin; Sun, Qian; Liu, Yuhuai; Wang, Yongjin

    2017-07-01

    We propose, fabricate and characterize photonic integration of a InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide, ring resonator and InGaN/GaN MQW-photodiode on a single chip, in which the photonic circuit is suspended by the support beams. Both experimental observations and simulation results illustrate the manipulation of in-plane light coupling and propagation by the waveguide and the ring resonator. The monolithic photonic circuit forms an in-plane data communication system using visible light. When the two suspended InGaN/GaN MQW-diodes simultaneously serve as the transmitter and the receiver, an in-plane full-duplex light communication is experimentally demonstrated with a transmission rate of 30 Mbps, and the superimposed signals are extracted using the self-interference cancellation method. The suspended photonic circuit creates new possibilities for exploring the in-plane full-duplex light communication and manufacturing complex GaN-based monolithic photonic integrations.

  11. The pin pixel detector--neutron imaging

    CERN Document Server

    Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Rhodes, N J; Schooneveld, E M; Simmons, J E; Stephenson, R

    2002-01-01

    The development and testing of a neutron gas pixel detector intended for application in neutron diffraction studies is reported. Using standard electrical connector pins as point anodes, the detector is based on a commercial 100 pin connector block. A prototype detector of aperture 25.4 mmx25.4 mm has been fabricated, giving a pixel size of 2.54 mm which matches well to the spatial resolution typically required in a neutron diffractometer. A 2-Dimensional resistive divide readout system has been adapted to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics. The timing properties of the device match well to the requirements of the ISIS-pulsed neutron source.

  12. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    Science.gov (United States)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  13. Cheap and Easy PIN Entering Using Eye Gaze

    Directory of Open Access Journals (Sweden)

    Kasprowski Pawel

    2014-03-01

    Full Text Available PINs are one of the most popular methods to perform simple and fast user authentication. PIN stands for Personal Identification Number, which may have any number of digits or even letters. Nevertheless, 4-digit PIN is the most common and is used for instance in ATMs or cellular phones. The main advantage of the PIN is that it is easy to remember and fast to enter. There are, however, some drawbacks. One of them - addressed in this paper - is a possibility to steal PIN by a technique called `shoulder surfing'. To avoid such problems a novel method of the PIN entering was proposed. Instead of using a numerical keyboard, the PIN may be entered by eye gazes, which is a hands-free, easy and robust technique. References:

  14. Timing analysis of PWR fuel pin failures

    Energy Technology Data Exchange (ETDEWEB)

    Jones, K.R.; Wade, N.L.; Katsma, K.R.; Siefken, L.J. (EG and G Idaho, Inc., Idaho Falls, ID (United States)); Straka, M. (Halliburton NUS, Idaho Falls, ID (United States))

    1992-09-01

    Research has been conducted to develop and demonstrate a methodology for calculation of the time interval between receipt of the containment isolation signals and the first fuel pin failure for loss-of-coolant accidents (LOCAs). Demonstration calculations were performed for a Babcock and Wilcox (B W) design (Oconee) and a Westinghouse (W) four-loop design (Seabrook). Sensitivity studies were performed to assess the impacts of fuel pin bumup, axial peaking factor, break size, emergency core cooling system availability, and main coolant pump trip on these times. The analysis was performed using the following codes: FRAPCON-2, for the calculation of steady-state fuel behavior; SCDAP/RELAP5/MOD3 and TRACPF1/MOD1, for the calculation of the transient thermal-hydraulic conditions in the reactor system; and FRAP-T6, for the calculation of transient fuel behavior. In addition to the calculation of fuel pin failure timing, this analysis provides a comparison of the predicted results of SCDAP/RELAP5/MOD3 and TRAC-PFL/MOD1 for large-break LOCA analysis. Using SCDAP/RELAP5/MOD3 thermal-hydraulic data, the shortest time intervals calculated between initiation of containment isolation and fuel pin failure are 10.4 seconds and 19.1 seconds for the B W and W plants, respectively. Using data generated by TRAC-PF1/MOD1, the shortest intervals are 10.3 seconds and 29.1 seconds for the B W and W plants, respectively. These intervals are for a double-ended, offset-shear, cold leg break, using the technical specification maximum peaking factor and applied to fuel with maximum design bumup. Using peaking factors commensurate widi actual bumups would result in longer intervals for both reactor designs. This document also contains appendices A through J of this report.

  15. Mesoscopic pinning forces in neutron star crusts

    CERN Document Server

    Seveso, Stefano; Grill, Fabrizio; Haskell, Brynmor

    2014-01-01

    The crust of a neutron star is thought to be comprised of a lattice of nuclei immersed in a sea of free electrons and neutrons. As the neutrons are superfluid their angular momentum is carried by an array of quantized vortices. These vortices can pin to the nuclear lattice and prevent the neutron superfluid from spinning down, allowing it to store angular momentum which can then be released catastrophically, giving rise to a pulsar glitch. A crucial ingredient for this model is the maximum pinning force that the lattice can exert on the vortices, as this allows us to estimate the angular momentum that can be exchanged during a glitch. In this paper we perform, for the first time, a detailed and quantitative calculation of the pinning force \\emph{per unit length} acting on a vortex immersed in the crust and resulting from the mesoscopic vortex-lattice interaction. We consider realistic vortex tensions, allow for displacement of the nuclei and average over all possible orientation of the crystal with respect to...

  16. Improved Pinning Center Morphology in HTS with Order-of-Magnitude Increase in Jc and Bpin Compared to Columnar Pinning

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The motivation for continuouscolumnar pinning centers has been to provide maximum Upin. It has been assumed that this provides the best Jc and Bpin. Limitations on Jc and Bpin observed for columnar pinning have been attributed to degradation of the order parameter and Tc. We examine columnar pinning by ionic damage and conclude instead that geometrical effects of columnar pinningon percolation path and on the number of pinning centers are the dominant limitations of columnar pinning, leading to a limit of Bpin~4 T. Evidence suggests that multiple-in-line-defects (MILD) are far better suited to increase Jc and Bpin. The morphology of MILD pinning is reviewed. Ion energy loss per unit distance, Se, is found to be most promising in a regime almost diametrically opposite to that sought to maximize Upin. We expect Jc~106 A/cm2 and Bpin>40 T from MILD pinning,despite sharply decreased Upin.Experimental confirmation is proposed.

  17. Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders

    NARCIS (Netherlands)

    De Kanter, J.L.C.G.

    2006-01-01

    Summary accompanying the thesis: Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders by Jens de Kanter This thesis presents the investigation of the crush behaviour of both monolithic aluminium cylinders and externally fibre reinforced aluminium cylinders. The research is based

  18. Time-based position estimation in monolithic scintillator detectors

    NARCIS (Netherlands)

    Tabacchini, V.; Borghi, G.; Schaart, D.R.

    2015-01-01

    Gamma-ray detectors based on bright monolithic scintillation crystals coupled to pixelated photodetectors are currently being considered for several applications in the medical imaging field. In a typical monolithic detector, both the light intensity and the time of arrival of the earliest

  19. Time-based position estimation in monolithic scintillator detectors

    NARCIS (Netherlands)

    Tabacchini, V.; Borghi, G.; Schaart, D.R.

    2015-01-01

    Gamma-ray detectors based on bright monolithic scintillation crystals coupled to pixelated photodetectors are currently being considered for several applications in the medical imaging field. In a typical monolithic detector, both the light intensity and the time of arrival of the earliest scintilla

  20. Time-based position estimation in monolithic scintillator detectors

    NARCIS (Netherlands)

    Tabacchini, V.; Borghi, G.; Schaart, D.R.

    2015-01-01

    Gamma-ray detectors based on bright monolithic scintillation crystals coupled to pixelated photodetectors are currently being considered for several applications in the medical imaging field. In a typical monolithic detector, both the light intensity and the time of arrival of the earliest scintilla

  1. A Monolithic Perovskite Structure for Use as a Magnetic Regenerator

    DEFF Research Database (Denmark)

    Pryds, Nini; Clemens, Frank; Menon, Mohan

    2011-01-01

    A La0.67Ca0.26Sr0.07Mn1.05O3 (LCSM) perovskite was prepared for the first time as a ceramic monolithic regenerator used in a regenerative magnetic refrigeration device. The parameters influencing the extrusion process and the performance of the regenerator, such as the nature of the monolith paste...

  2. Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders

    NARCIS (Netherlands)

    De Kanter, J.L.C.G.

    2006-01-01

    Summary accompanying the thesis: Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders by Jens de Kanter This thesis presents the investigation of the crush behaviour of both monolithic aluminium cylinders and externally fibre reinforced aluminium cylinders. The research is based

  3. Hydrogel coated monoliths for enzymatic hydrolysis of penicillin G

    NARCIS (Netherlands)

    De Lathouder, K.M.; Smeltink, M.W.; Straathof, A.J.J.; Paasman, M.A.; Van de Sandt, E.J.A.X.; Kapteijn, F.; Moulijn, J.A.

    2008-01-01

    The objective of this work was to develop a hydrogel-coated monolith for the entrapment of penicillin G acylase (E. coli, PGA). After screening of different hydrogels, chitosan was chosen as the carrier material for the preparation of monolithic biocatalysts. This protocol leads to active immobilize

  4. A new large area monolithic silicon telescope

    CERN Document Server

    Tudisco, S; Cabibbo, M; Cardella, G; De Geronimo, G; Di Pietro, A; Fallica, G; Figuera, P; Musumarra, A; Papa, M; Pappalardo, G S; Rizzo, F; Valvo, G

    1999-01-01

    A new prototype of large area (20x20 mm sup 2) monolithic silicon telescope with an ultrathin DELTA E stage (1 mu m) has been built and tested. A particular mask for the ground electrode has been developed to improve the charge collection reducing the induction between the E and DELTA E stages. A special designed preamplifier has been used for the readout of the signal from the DELTA E stage to overcome the problem of the large input capacitance (40 nF). A rather low energy threshold charge discrimination has been obtained. Small side effects due to the electric field deformation near the ground electrode were observed and quantified.

  5. Monolithic aerogels with nanoporous crystalline phases

    Science.gov (United States)

    Daniel, Christophe; Guerra, Gaetano

    2015-05-01

    High porosity monolithic aerogels with nanoporous crystalline phases can be obtained from syndiotactic polystyrene and poly(2,6-dimethyl-1,4-phenylene)oxide thermoreversible gels by removing the solvent with supercritical CO2. The presence of crystalline nanopores in the aerogels based on these polymers allows a high uptake associated with a high selectivity of volatile organic compounds from vapor phase or aqueous solutions even at very low activities. The sorption and the fast kinetics make these materials particularly suitable as sorption medium to remove traces of pollutants from water and moist air.

  6. Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

    Energy Technology Data Exchange (ETDEWEB)

    Gajula, D. R., E-mail: dgajula01@qub.ac.uk; Baine, P.; Armstrong, B. M.; McNeill, D. W. [School of Electronics, Electrical Engineering and Computer Science, Queen' s University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH (United Kingdom); Modreanu, M.; Hurley, P. K. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

    2014-01-06

    Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

  7. Monolithic white LED based on Al{sub x}Ga{sub 1-x} N/In{sub y}Ga{sub 1-y}N DBR resonant-cavity

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yu; Zhu Shanshan [College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Huang Lirong [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2009-01-15

    A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the Al{sub x}Ga{sub 1-x}N/In{sub y}Ga{sub 1-y}N distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.

  8. Magnetic flux pinning in superconductors with hyperbolic-tessellation arrays of pinning sites

    Science.gov (United States)

    Misko, V. R.; Nori, Franco

    2012-05-01

    We study magnetic flux interacting with arrays of pinning sites (APSs) placed on vertices of hyperbolic tessellations (HTs). We show that, due to the gradient in the density of pinning sites, HT APSs are capable of trapping vortices for a broad range of applied magnetic fluxes. Thus, the penetration of magnetic field in HT APSs is essentially different from the usual scenario predicted by the Bean model. We demonstrate that, due to the enhanced asymmetry of the surface barrier for vortex entry and exit, this HT APS could be used as a “capacitor” to store magnetic flux.

  9. Monolithic columns in plant proteomics and metabolomics.

    Science.gov (United States)

    Rigobello-Masini, Marilda; Penteado, José Carlos Pires; Masini, Jorge Cesar

    2013-03-01

    Since "omics" techniques emerged, plant studies, from biochemistry to ecology, have become more comprehensive. Plant proteomics and metabolomics enable the construction of databases that, with the help of genomics and informatics, show the data obtained as a system. Thus, all the constituents of the system can be seen with their interactions in both space and time. For instance, perturbations in a plant ecosystem as a consequence of application of herbicides or exposure to pollutants can be predicted by using information gathered from these databases. Analytical chemistry has been involved in this scientific evolution. Proteomics and metabolomics are emerging fields that require separation, identification, and quantification of proteins, peptides, and small molecules of metabolites in complex biological samples. The success of this work relies on efficient chromatographic and electrophoretic techniques, and on mass spectrometric detection. This paper reviews recent developments in the use of monolithic columns, focusing on their applications in "top-down" and "bottom-up" approaches, including their use as supports for immobilization of proteolytic enzymes and their use in two-dimensional and multidimensional chromatography. Whereas polymeric columns have been predominantly used for separation of proteins and polypeptides, silica-based monoliths have been more extensively used for separation of small molecules of metabolites. Representative applications in proteomics and in analysis of plant metabolites are given and summarized in tables.

  10. Growth techniques for monolithic YBCO solenoidal magnets

    Energy Technology Data Exchange (ETDEWEB)

    Scruggs, S.J. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States)]. E-mail: Sscruggs2@uh.edu; Putman, P.T. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Fang, H. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Alessandrini, M. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States); Salama, K. [Texas Center for Superconductivity at University of Houston, 4800 Calhoun, Houston, TX 77204 (United States)

    2006-10-01

    The possibility of growing large single domain YBCO solenoids by the use of a large seed has been investigated. There are two known methods for producing a similar solenoid. This first is a conventional top seeded melt growth process followed by a post processing machining step to create the bore. The second involves using multiple seeds spaced around the magnet bore. The appeal of the new technique lies in decreasing processing time compared to the single seed technique, while avoiding alignment problems found in the multiple seeding technique. By avoiding these problems, larger diameter monoliths can be produced. Large diameter monoliths are beneficial because the maximum magnetic field produced by a trapped field magnet is proportional to the radius of the sample. Furthermore, the availability of trapped field magnets with large diameter could enable their use in applications that traditionally have been considered to require wound electromagnets, such as beam bending magnets for particle accelerators or electric propulsion. A comparison of YBCO solenoids grown by the use of a large seed and grown by the use of two small seeds simulating multiple seeding is made. Trapped field measurements as well as microstructure evaluation were used in characterization of each solenoid. Results indicate that high quality growth occurs only in the vicinity of the seeds for the multiple seeded sample, while the sample with the large seeded exhibited high quality growth throughout the entire sample.

  11. High surface area, high permeability carbon monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Lagasse, R.R.; Schroeder, J.L. [Sandia National Labs., Albuquerque, NM (United States). Organic Materials Processing Dept.

    1994-12-31

    The goal of this work is to prepare carbon monoliths having precisely tailored pore size distribution. Prior studies have demonstrated that poly(acrylonitrile) can be processed into a precursor having tailored macropore structure. Since the macropores were preserved during pyrolysis, this synthetic process provided a route to porous carbon having macropores with size =0.1 to 10{mu}m. No micropores of size <2 nm could be detected in the carbon, however, by nitrogen adsorption. In the present work, the authors have processed a different polymer, poly(vinylidene chloride) into a macroporous precursor, Pyrolysis produced carbon monoliths having macropores derived from the polymer precursor as well as extensive microporosity produced during the pyrolysis of the polymer. One of these carbons had BET surface area of 1,050 m{sup 2}/g and about 1.2 cc/g total pore volume, with about 1/3 of the total pore volume in micropores and the remainder in 1{mu}m macropores. No mesopores in the intermediate size range could be detected by nitrogen adsorption. Carbon materials having high surface area as well as micron size pores have potential applications as electrodes for double layer supercapacitors containing liquid electrolyte, or as efficient media for performing chemical separations.

  12. Hydrothermal method for preparing calcium phosphate monoliths

    Directory of Open Access Journals (Sweden)

    García Carrodeguas Raúl

    2003-01-01

    Full Text Available A new hydrothermal route for preparing biphasic calcium phosphate monoliths is proposed. Firstly, a slurry of beta-tricalcium phosphate/ortho-phosphoric acid (b-TCP/H3PO4 is cast into the desired final shape and size to obtain a block composed of dicalcium phosphate dihydrate (DCPD and b-TCP. This block is then treated in 1.0 M Na2HPO4 at 60 °C in order to hydrolyze the DCPD into Ca10-x(HPO4x(PO4 6-x(OH2-x (CDHA and Ca8H2(PO46 .5H2O (OCP. The result is a monolithic piece which preserves the initial shape and size, but which is composed instead of CDHA, OCP, and b-TCP. During the initial stage, when the pH is slightly alkaline, the product of DCPD hydrolysis is CDHA. However, when a neutral or slightly acidic pH is reached OCP is formed. Test samples processed by this method showed complete conversion of DCPD into CDHA and OCP after 112 h of hydrolysis, and with a compressive strength of 16.2 MPa, similar to cancellous bone.

  13. Catastrophic failure of a monolithic zirconia prosthesis.

    Science.gov (United States)

    Chang, Jae-Seung; Ji, Woon; Choi, Chang-Hoon; Kim, Sunjai

    2015-02-01

    Recently, monolithic zirconia restorations have received attention as an alternative to zirconia veneered with feldspathic porcelain to eliminate chipping failures of veneer ceramics. In this clinical report, a patient with mandibular edentulism received 4 dental implants in the interforaminal area, and a screw-retained monolithic zirconia prosthesis was fabricated. The patient also received a maxillary complete removable dental prosthesis over 4 anterior roots. At the 18-month follow-up, all of the zirconia cylinders were seen to be fractured, and the contacting abutment surfaces had lost structural integrity. The damaged abutments were replaced with new abutments, and a new prosthesis was delivered with a computer-assisted design and computer-assisted manufacturing fabricated titanium framework with denture teeth and denture base resins. At the 6-month recall, the patient did not have any problems. Dental zirconia has excellent physical properties; however, care should be taken to prevent excessive stresses on the zirconia cylinders when a screw-retained zirconia restoration is planned as a definitive prosthesis.

  14. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M

    1999-01-01

    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  15. Negative differential resistance in direct bandgap GeSn p-i-n structures

    Science.gov (United States)

    Schulte-Braucks, C.; Stange, D.; von den Driesch, N.; Blaeser, S.; Ikonic, Z.; Hartmann, J. M.; Mantl, S.; Buca, D.

    2015-07-01

    Certain GeSn alloys are group IV direct bandgap semiconductors with prospects for electrical and optoelectronical applications. In this letter, we report on the temperature dependence of the electrical characteristics of high Sn-content Ge 0.89 Sn 0.11 p-i-n diodes. NiGeSn contacts were used to minimize the access resistance and ensure compatibility with silicon technology. The major emphasis is placed on the negative differential resistance in which peak to valley current ratios up to 2.3 were obtained. TCAD simulations were performed to identify the origin of the various current contributions, providing evidence for direct band to band tunneling and trap assisted tunneling.

  16. Low-energy internal conversion electrons spectrometry with a silicon diode

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Thiago R. [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Inst. de Fisica; Camargo, Fabio de; Goncalves, Josemary A.C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)]. E-mail: fcamargo@ipen.br; josemary@ipen.br; ccbueno@ipen.br; Bueno, Carmen C. [Pontificia Universidade Catolica de Sao Paulo (PUC/SP), Sao Paulo, SP (Brazil). Dept. de Fisica; Fraga, Margarida R.F. [Universidade de Coimbra, Coimbra (Portugal). Dept. de Fisica. Lab. de Instrumentacao e Fisica Experimental de Particulas]. E-mail: margarida@lipc.fis.uc.pt

    2007-07-01

    In this paper the preliminary results obtained with a PIN photodiode (SFH00206) for the detection and spectrometry of internal results from {sup 57}Co, {sup 109}Cd and {sup 133}Ba radioactive sources are described. The effect of the reverse bias on the energy resolution was studied and has shown a value of 2.8 keV (FHWM) for the {sup 57}Co 129.36 keV electron emission, when the diode was biased with 20 V at a temperature of 22 degree C. The obtained energy resolution can be attributed to both the energy loss in the diode dead layer and in the Makrofol covering of the sources, besides the contribution of the preamplifier electronic noise. Nevertheless, the energy resolutions measured are sufficiently good to justify the use of the diode for detection and spectrometry of internal conversion electrons. (author)

  17. Diamond based light-emitting diode for visible single-photon emission at room temperature

    Science.gov (United States)

    Lohrmann, A.; Pezzagna, S.; Dobrinets, I.; Spinicelli, P.; Jacques, V.; Roch, J.-F.; Meijer, J.; Zaitsev, A. M.

    2011-12-01

    Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.

  18. Testing of the KRI-developed Silicon PIN Radioxenon Detector

    Energy Technology Data Exchange (ETDEWEB)

    Foxe, Michael P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McIntyre, Justin I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-01-23

    reduced by a factor of 10 in the Si PIN detector compared to the current plastic scintillator cells. There is potential for further reduction with the removal of plastics within the cell, which will need to be explored in future work. A third important parameter in choosing the best detection technique for radioxenon is the resolution of the electron detection. While the resolution is important in determining the minimum detectable concentration, it plays a larger role in source identification when there is a visible signal. The Silicon PIN diodes generated improved resolution over a similar plastic scintillator cell. With the improved resolution, it becomes easier to distinguish the radioxenon isomers (133mXe and 131mXe) from the 133Xe beta continuum background. With the beta background from 133Xe ever present with the detection of the isomers, the improved resolution proves vital in calculating the ratios of the three isotopes. With an accurate measurement of the isotopic ratios, the anthropogenic sources of radioxenon (medical isotope production and nuclear reactors) can be more accurately distinguished. Based on the results shown within this report, a Si PIN beta cell shows the potential to aid in the operation and discriminating power of the IMS for the CTBTO. However, there are a number of issues that need attention before a detector of this design would be reliable enough for field operations in the IMS. Issues that need develop include, but are not limited to: studying the robustness of the design in field conditions, eliminating or minimizing the noise and variability of individual Si detector elements, understanding the long-term gain stability of the Si detectors, and reducing the non-Si materials within the cell (i.e. the plastic housing).

  19. Resonant cavity light-emitting diodes: modeling, design, and optimization

    Science.gov (United States)

    Dumitrescu, Mihail M.; Sipila, Pekko; Vilokkinen, Ville; Toikkanen, L.; Melanen, Petri; Saarinen, Mika J.; Orsila, Seppo; Savolainen, Pekka; Toivonen, Mika; Pessa, Markus

    2000-02-01

    Monolithic top emitting resonant cavity light-emitting diodes operating in the 650 and 880 nm ranges have been prepared using solid-source molecular beam epitaxy growth. Transfer matrix based modeling together with a self- consistent model have been sued to optimize the devices' performances. The design of the layer structure and doping profile was assisted by computer simulations that enabled many device improvements. Among the most significant ones intermediate-composition barrier-reduction layers were introduced in the DBR mirrors for improving the I-V characteristics and the cavity and mirrors were detuned aiming at maximum extraction efficiency. The fabricated devices showed line widths below 15 nm, CW light power output of 8 and 22.5 mW, and external quantum efficiencies of 3 percent and 14.1 percent in the 650 nm and 880 nm ranges, respectively - while the simulations indicate significant performance improvement possibilities.

  20. Development of PIN Diode Detector Arrays for 3D Flash LIDAR Space Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Advanced Scientific Concepts, Inc. (ASC) has developed a number of 3D Flash LIDAR systems. Flash LIDAR sensors are 3D video systems that return range and intensity...

  1. Characteristics of p-i-n diodes basing on displacement damage detector

    Science.gov (United States)

    Jing, Sun; Qi, Guo; Xin, Yu; Cheng-Fa, He; Wei-Lei, Shi; Xing-Yao, Zhang

    2017-10-01

    A displacement damage detector is designed and its characteristics are tested with 10 MeV proton irradiation. The testing result shows that the detector's readout changes linearly with the fluence of proton beam up to 1012 proton/cm2. However, a significant damage enhancement factor has been observed for 1.8 MeV electron irradiation when the classic non-ionizing energy loss (NIEL) is used for calculating equivalent displacement damage. Since the prediction based on classical NIEL model cannot fit low energy incident well, low energy particles induced displacement damage mechanism, defect generation, recombination and effective NIEL modification is discussed by molecular dynamics (MD) model. The effective NIEL is validated by measuring the detector's response under 1.8 MeV electron irradiation. The equivalent displacement damage between different particles is discussed through scaling factor, damage factor, and damage enhancement factor. By this method, the application of degradation function can be expanded to low energy particles by using effective NIEL.

  2. Robustness of pinning a general complex dynamical network

    Energy Technology Data Exchange (ETDEWEB)

    Wang Lei, E-mail: lwang@buaa.edu.c [Laboratory of Mathematics, Information and Behavior of the Ministry of Education, Department of Systems and Control, Beihang University, Beijing 100191 (China); Sun Youxian [State Key Laboratory of Industrial Control Technology, Institute of Industrial Process Control, Zhejiang University, Hangzhou 310027 (China)

    2010-04-05

    This Letter studies the robustness problem of pinning a general complex dynamical network toward an assigned synchronous evolution. Several synchronization criteria are presented to guarantee the convergence of the pinning process locally and globally by construction of Lyapunov functions. In particular, if a pinning strategy has been designed for synchronization of a given complex dynamical network, then no matter what uncertainties occur among the pinned nodes, synchronization can still be guaranteed through the pinning. The analytical results show that pinning control has a certain robustness against perturbations on network architecture: adding, deleting and changing the weights of edges. Numerical simulations illustrated by scale-free complex networks verify the theoretical results above-acquired.

  3. A mechanism to pin skyrmions in chiral magnets.

    Science.gov (United States)

    Liu, Ye-Hua; Li, You-Quan

    2013-02-20

    We propose a mechanism to pin skyrmions in chiral magnetic thin films by introducing local maxima of magnetic exchange strength as pinning centers. The local maxima can be realized by engineering the local density of itinerant electrons. The stationary properties and the dynamical pinning and depinning processes of an isolated skyrmion around a pinning center are studied. We carry out numerical simulations of the Landau-Lifshitz-Gilbert (LLG) equation and find a way to control the position of an isolated skyrmion in a pinning center lattice using electric current pulses. The results are verified by a Thiele equation analysis. We also find that the critical current to depin a skyrmion, which is estimated to have order of magnitude 10(7)-10(8) A m(-2), has linear dependence on the pinning strength.

  4. Monolithically integrated planar front-end photoreceivers with 0.25-micron gate pseudomorphic In(0.60)Ga(0.40)As/In(0.52)Al(0.48)As/InP modulation-doped field-effect transistors

    Science.gov (United States)

    Lai, R.; Bhattacharya, P. K.; Pavlidis, D.; Brock, T.

    1991-02-01

    Monolithically InP-based pin-MODFET front-end photoreceivers realized by MBE regrowth have been characterized. The FWHM of the temporal response to photoexcitation for the full circuit was 60 psec, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 ohms is 15.0 GHz. The performance of the pin-MODFET photoreceiver circuit is comparable to the best hybrid circuits with InP-based devices.

  5. Principles of intramedullary pin and wire fixation.

    Science.gov (United States)

    Howard, P E

    1991-02-01

    Knowledge and experience in the proper use of IM pins, K-wires, and orthopedic wire is a valuable asset to the veterinarian's ability to successfully repair a variety of long bone fractures. Most long bone fractures are amenable to repair with this form of fixation. When the principles of application are violated or the implants are used when contraindicated, complications often occur. Proper use of these implants results in the successful management of complex fractures to the satisfaction of both the animal owner and the veterinarian (Fig 10).

  6. Controlling Flow Turbulence Using Local Pinning Feedback

    Institute of Scientific and Technical Information of China (English)

    TANG Guo-Ning; HU Gang

    2006-01-01

    Flow turbulence control in two-dimensional Navier-Stokes equation is considered.By applying local pinning control only to a sjngle component of flow velocity field,the flow turbulence can be controlled to desirable targets.It is found that with certain number of controllers there exist an optimal control strength at which control error takes minimum value,and larger and smaller control strengths give worse control efficiency.The phvsical mechanism underlying these strange control results is analysed based on the interactions between different types of modes.

  7. Optimum Prestress of Tanks with Pinned Base

    DEFF Research Database (Denmark)

    Brøndum-Nielsen, Troels

    1998-01-01

    Amin Ghali and Eleanor Elliott presented in their paper an interesting suggestion for prestressing of circular tanks without sliding joints. For many prestressed tanks the following construction procedure is adopted:In order to ensure compressive hoop forces in the wall near the base, the wall...... is allowed to slide freely in the radial direction during tensioning (free base).After tensioning such displacements are prevented (pinned base). The present paper addresses the problem of prestress of such tanks.Keywords: circular prestressing; creep properties; prestressed concrete; redistribution...... of stress; stress relaxation; tanks....

  8. Monolithic millimeter-wave diode array beam controllers: Theory and experiment

    Science.gov (United States)

    Sjogren, L. B.; Liu, H.-X. L.; Wang, F.; Liu, T.; Wu, W.; Qin, X.-H.; Chung, E.; Domier, C. W.; Luhmann, N. C., Jr.; Maserjian, J.

    1992-01-01

    In the current work, multi-function beam control arrays have been fabricated and have successfully demonstrated amplitude control of transmitted beams in the W and D bands (75-170 GHz). While these arrays are designed to provide beam control under DC bias operation, new designs for high-speed electronic and optical control are under development. These arrays will fill a need for high-speed watt-level beam switches in pulsed reflectometer systems under development for magnetic fusion plasma diagnostics. A second experimental accomplishment of the current work is the demonstration in the 100-170 GHz (D band) frequency range of a new technique for the measurement of the transmission phase as well as amplitude. Transmission data can serve as a means to extract ('de-embed') the grid parameters; phase information provides more complete data to assist in this process. Additional functions of the array beam controller yet to be tested include electronically controlled steering and focusing of a reflected beam. These have application in the areas of millimeter-wave electronic scanning radar and reflectometry, respectively.

  9. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  10. High-power monolithic single-mode diode lasers employing active photonic lattices

    Science.gov (United States)

    Botez, Dan

    2003-06-01

    Photonic-lattice structures with modulated gain, that is active photonic lattices (APLs), of large index steps and gain preferentially enhanced on the low-index lattice sites have been used, as early as 1988, for effective lateral-mode control range in large-aperture (100-200 microns) high-power coherent devices. Photonic-bandpass (PBP) structures relying on long-range resonant leaky-wave coupling, so called ROW arrays, have allowed stable, near-diffraction-limited beam operation to powers as high as 1.6W CW and 10W peak pulsed. Photonic-bandgap (PBG) structures with a built-in lattice defect, so called ARROW lasers, have provided up to 0.5W peak-pulsed stable, single-mode power and hold the potential for 1W CW reliable single-mode operation from apertures 8-10 microns wide. The solution for high-efficiency surface emission, from 2nd-order DFB/DBR lasers, in an orthonormal, single-lobe beam pattern was found in 2000. Recently, single-lobe and single-mode operation in a diffraction-limited beam orthonormal to the chip surface was demonstrated from 1.5mm-long DFB/DBR ridge-guide lasers. That opens the way for the realization of 2-D surface-emitting,2nd-order APLs for the stable generation of watts of CW single-lobe, single-mode power from large 2-D apertures, as well as scalability of such devices at the wafer level.

  11. Monolithic Hybrid and Passive Mode-Locked 40GHz Quantum Dot Laser Diodes

    DEFF Research Database (Denmark)

    Thompson, M. G.; Larsson, David; Rae, A. R.;

    2006-01-01

    For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs.......For the first time hybrid and passive mode-locking jitter performance is investigated in 40GHz quantum-dot mode-locked lasers. Record low passive mode-locking jitter of 219fs is presented, along with promising hybrid mode-locking results of 124fs....

  12. Development of 3D pseudo pin-by-pin calculation methodology in ANC

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, B.; Mayhue, L.; Huria, H.; Ivanov, B. [Westinghouse Electric Company LLC, 1000 Westinghouse Drive, Cranberry, PA 16066 (United States)

    2012-07-01

    Advanced cores and fuel assembly designs have been developed to improve operational flexibility, economic performance and further enhance safety features of nuclear power plants. The simulation of these new designs, along with strong heterogeneous fuel loading, have brought new challenges to the reactor physics methodologies currently employed in the industrial codes for core analyses. Control rod insertion during normal operation is one operational feature in the AP1000{sup R} plant of Westinghouse next generation Pressurized Water Reactor (PWR) design. This design improves its operational flexibility and efficiency but significantly challenges the conventional reactor physics methods, especially in pin power calculations. The mixture loading of fuel assemblies with significant neutron spectrums causes a strong interaction between different fuel assembly types that is not fully captured with the current core design codes. To overcome the weaknesses of the conventional methods, Westinghouse has developed a state-of-the-art 3D Pin-by-Pin Calculation Methodology (P3C) and successfully implemented in the Westinghouse core design code ANC. The new methodology has been qualified and licensed for pin power prediction. The 3D P3C methodology along with its application and validation will be discussed in the paper. (authors)

  13. Preparation and Characterization of Temperature-responsive Porous Monoliths

    Institute of Scientific and Technical Information of China (English)

    ZHANG, Rongyue; QI, Li; XIN, Peiyong; YANG, Gengliang; CHEN, Yi

    2009-01-01

    A new temperature-responsive porous monolith has been prepared by surface-initiated activators generated by electron transfer atom transfer radical polymerization (AGET ATRP) grafting poly(N-isopropylacrylamide) (PNIPAAm) within the pores of the porous polymer monolith. The grafting copolymerization was carried out by a method based on a continuous flow-through technique without special deoxygenation procedure needed in the general ATRP. The addition of ascorbic acid could counteract the oxidation effect of oxygen diffusing into the reaction system. The resulting grafted monolith was characterized by a mercury intrusion method and the size of macropore was 3.65 μm, which was suitable for flow through the monolith for HPLC. The thermally responsive property of the grafted monolith was evaluated by HPLC using steroids with various hydrophobicities as probes. Through determination of retention factor of each steroid on the grafted monolith at different temperatures using water as mobile phase, it was found that the slope of the plot of retention factor of each steroid versus the temperature changed around the low critical solution temperature (LCST, 32 ℃) of PNIPAAm in water. It was relative to the grafted PNIPAAm temperature sensitivity that a hydrophobic and hydrophilic alternation would take place around its LCST.Based on this thermally responsive property, the grafted monolith was used as stationary phase for HPLC and to separate the steroids using water as mobile phase by changing the column temperature. As a mobile phase, water is much better than organic solvents concerning the environment.

  14. Influence of different carbon monolith preparation parameters on pesticide adsorption

    Directory of Open Access Journals (Sweden)

    Vukčević Marija

    2013-01-01

    Full Text Available The capacity of carbon monolith for pesticide removal from water, and the mechanism of pesticide interaction with carbon surface were examined. Different carbon monolith samples were obtained by varying the carbonization and activation parameters. In order to examine the role of surface oxygen groups in pesticide adsorption, carbon monolith surface was functionalized by chemical treatment in HNO3, H2O2 and KOH. The surface properties of the obtained samples were investigated by BET surface area, pore size distribution and temperature-programmed desorption. Adsorption of pesticides from aqueous solution onto activated carbon monolith samples was studied by using five pesticides belonging to different chemical groups (acetamiprid, dimethoate, nicosulfuron, carbofuran and atrazine. Presented results show that higher temperature of carbonization and the amount of activating agent allow obtaining microporous carbon monolith with higher amount of surface functional groups. Adsorption properties of the activated carbon monolith were more readily affected by the amount of the surface functional groups than by specific surface area. Results obtained by carbon monolith functionalisation showed that π-π interactions were the main force for adsorption of pesticides with aromatic structure, while acidic groups play an important role in adsorption of pesticides with no aromatic ring in the chemical structure.

  15. The pin pixel detector--X-ray imaging

    CERN Document Server

    Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Simmons, J E; Stephenson, R

    2002-01-01

    The development and testing of a soft X-ray gas pixel detector, which uses connector pins for the anodes is reported. Based on a commercial 100 pin connector block, a prototype detector of aperture 25.4 mm centre dot 25.4 mm can be economically fabricated. The individual pin anodes all show the expected characteristics of small gas detectors capable of counting rates reaching 1 MHz per pin. A 2-dimensional resistive divide readout system has been developed to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics.

  16. 327 to 324 Pin tube shipment quality management process plan

    Energy Technology Data Exchange (ETDEWEB)

    HAM, J.E.

    1998-11-05

    The B and W Hanford Company's (BWHC) 327 Facility, in the 300 Area of the Hanford Site, is preparing to ship five Pin Tubes to the 324 Facility for storage and eventual disposition. The Pin Tubes consist of legacy fuel pin pieces and drillings. They will be over-packed in new Pin Tubes and transported to 324 in three shipments. Once received at 324, two of the shipments will be combined for storage as a fissionable material batch, and the other shipment will be added to an existing batch.

  17. [Ingestion of an open safety pin--challenging treatment].

    Science.gov (United States)

    DeRowe, Ari; Fishman, Gadi; Avni, Hadas; Reider, Ivgeny; Ogorek, Daniel

    2003-11-01

    A 9 month old girl at the emergency room appeared with an acute onset of restlessness, drooling and suspected foreign body ingestion. An X-Ray revealed an open safety pin in the child's upper aero-digestive tract. The source of the safety pin was a "Hamsah" good luck charm that was attached to her bed. Open safety pins in the aero-digestive tract are difficult to manage and great care must be taken during removal to prevent further injury. Parents should be counseled regarding the presence of safety pins in the child's surroundings in order to prevent such hazards.

  18. Changing the flux flow state in weak pinning superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Leo, A., E-mail: antoleo@sa.infn.it [Physics Department E.R. Caianiello, University of Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy); CNR-SPIN Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy); Grimaldi, G. [CNR-SPIN Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy); Nigro, A. [Physics Department E.R. Caianiello, University of Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy); CNR-SPIN Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy); Bruno, E.; Priolo, F. [Matis IMM-CNR and Physics-Astronomy Department, Catania University, CT 95123 (Italy); Pace, S. [Physics Department E.R. Caianiello, University of Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy); CNR-SPIN Salerno, Via Giovanni Paolo II, 132, Stecca 9, I-84084 Fisciano, SA (Italy)

    2014-08-15

    Highlights: • We analyzed the effect of light ion irradiation on weak pinning superconductors. • We found the light ion irradiation has a strong impact on current currying stability. • We compared the results to the ones of the case of moderate strong pinning materials. - Abstract: The current carrying dissipative state well above the critical current it is known to be related to the pinning properties of the material and to the microscopic mechanisms of vortex dynamics. Moreover, it has been demonstrated that in low temperature superconducting films exhibiting moderately strong pinning the light ion irradiation has the effect of changing the distribution of the pinning centers without changing their pinning strength and this results into an increase of current stability in the flux flow state. Here we present the results of light ion irradiation on weak pinning superconducting films focusing on the influence of pinning properties of the material in the flux flow state. We realize that the possibility to switch to low dissipations by changing weak pinning is not straightforward.

  19. Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

    Energy Technology Data Exchange (ETDEWEB)

    Werner, J., E-mail: werner@iht.uni-stuttgart.de; Oehme, M.; Schirmer, A.; Kasper, E.; Schulze, J.

    2012-02-01

    GeSn p-i-n photodetectors with a low Sn mole fraction made by molecular beam epitaxy on Si substrates show higher optical responsivities for wavelength {lambda} > 1400 nm compared with p-i-n photodetectors made from pure Ge. The Sn incorporation in Ge is done by a low temperature growth step in order to minimize Sn segregation. The Sn incorporation and the alloy content are investigated by {mu}-Raman spectroscopy and calibrated Secondary Ion Mass Spectrometry. The photodetectors are manufactured with sharp doping transitions and are realized as double mesa structures with diameters from 1.5 {mu}m up to 80 {mu}m. The optical measurements are carried out with a broadband super continuum laser from {lambda} = 1200 nm up to {lambda} = 1700 nm. At a wavelength of {lambda} = 1550 nm the optical responsivity of these vertical GeSn diodes is 0.1 A/W. In comparison with a pure Ge detector of the same geometrical dimensions the optical responsivity is increased by factor of three as a result of Sn caused band gap reduction.

  20. A three-phase time-correlation image sensor using pinned photodiode active pixels

    Science.gov (United States)

    Han, Sangman; Iwahori, Tomohiro; Sawada, Tomonari; Kawahito, Shoji; Ando, Shigeru

    2010-01-01

    A time correlation (TC) image sensor is a device that produces 3-phase time-correlated signals between the incident light intensity and three reference signals. A conventional implementation of the TC image sensor using a standard CMOS technology works at low frequency and with low sensitivity. In order to achieve higher modulation frequency and high sensitivity, the TC image sensor with a dual potential structure using a pinned diode is proposed. The dual potential structure is created by changing the impurity doping concentration in the two different potential regions. In this structure, high-frequency modulation can be achieved, while maintaining a sufficient light receiving area. A prototype TC image sensor with 366×390pixels is implemented with 0.18-μm 1P4M CMOS image sensor technology. Each pixel with the size of 12μm×12μm has one pinned photodiode with the dual potential structure, 12 transistors and 3capacitors to implement three-parallel-output active pixel circuits. A fundamental operation of the implemented TC sensor is demonstrated.

  1. Pin-ups: pictures that fascinate and seduce Pin-ups: fotografias que encantam e seduzem

    Directory of Open Access Journals (Sweden)

    Maria Irene Pellegrino de Oliveira Souza

    2010-08-01

    Full Text Available Starting from photography studies, social anthropology and body visual, this article approaches the social construction of the feminine image through times. It narrates the history of erotic pinups photography and its fetishist elements. Pin-ups have aroused in the end of 19tcentury and it represents the free spirit of women. Slowly, it provokes the breakup of sensuality and sexuality feminine traditionalism. The article also discusses women’s sensuality as a desire object. The pin-ups sensual demure – with a mystery atmosphere – stimulated the eroticism at the beginning of the 20 century and, until nowadays, it provokes admiration, sigh and desire. Com base em estudos sobre fotografia, antropologia social e visual do corpo, este artigo aborda a imagem feminina socialmente construída através dos tempos. Narra o histórico da fotografia erótica de pin-ups e seus elementos fetichistas. As pin-ups surgiram no final do século XIX e representaram o espírito “livre” das mulheres. Sutilmente, incitavam o rompimento do tradicionalismo da época quanto à sensualidade e sexualidade feminina. O artigo aborda também a sensualidade feminina como objeto de desejo. O recato sensual das pin-ups – com ar de mistério – alavancou o erotismo no início do século XX e, até os dias atuais, provoca admiração, suspiros e desejos.

  2. Lightning Pin Injection Testing on MOSFETS

    Science.gov (United States)

    Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

    2009-01-01

    Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

  3. Optimizing Dynamical Network Structure for Pinning Control

    Science.gov (United States)

    Orouskhani, Yasin; Jalili, Mahdi; Yu, Xinghuo

    2016-04-01

    Controlling dynamics of a network from any initial state to a final desired state has many applications in different disciplines from engineering to biology and social sciences. In this work, we optimize the network structure for pinning control. The problem is formulated as four optimization tasks: i) optimizing the locations of driver nodes, ii) optimizing the feedback gains, iii) optimizing simultaneously the locations of driver nodes and feedback gains, and iv) optimizing the connection weights. A newly developed population-based optimization technique (cat swarm optimization) is used as the optimization method. In order to verify the methods, we use both real-world networks, and model scale-free and small-world networks. Extensive simulation results show that the optimal placement of driver nodes significantly outperforms heuristic methods including placing drivers based on various centrality measures (degree, betweenness, closeness and clustering coefficient). The pinning controllability is further improved by optimizing the feedback gains. We also show that one can significantly improve the controllability by optimizing the connection weights.

  4. Preliminary comparison of monolithic and aperture optics for XRMF

    Energy Technology Data Exchange (ETDEWEB)

    Havrilla, G.J.; Worley, C.G.

    1997-08-01

    Comparisons between standard aperture optics and a custom designed monolithic capillary x-ray optic for the Kevex Omicron are presented. The results demonstrate the feasibility of retrofitting an Omicron with a monolithic capillary. Increased flux is observed especially at lower energies which results in an increase in sensitivity and potentially an increase in spatial resolution. Alignment is a critical factor in achieving optimal performance of the monolithic capillary. Further improvements in flux output, spot size and overall sensitivity are expected with better alignment.

  5. On monolithic stability and reinforcement analysis of high arch dams

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Monolithic stability safety and reinforcement based on monolithic stability are very important for arch dam design.In this paper,the issue is addressed based on deformation reinforcement theory.In this approach,plastic complementary energy norm can be taken as safety Index for monolithic stability.According to deformation reinforcement theory,the areas where unbalanced force exists require reinforcement,and the required reinforcement forces are just the unbalanced forces with opposite direction.Results show that areas with unbalanced force mainly concentrate in dam-toes,dam-heels and faults.

  6. Hierarchically Structured Monolithic ZSM-5 through Macroporous Silica Gel Zeolitization

    Institute of Scientific and Technical Information of China (English)

    Lei Qian; Zhao Tianbo; Li Fengyan; Zong Baoning; Tong Yangchuan

    2006-01-01

    The hierarchically structured ZSM-5 monolith was prepared through transforming the skeletons of the macroporous silica gel into ZSM-5 by the steam-assisted conversion method. The morphology and monolithic shapes of macroporous silica gel were well preserved. The hierarchically structured ZSM-5 monolith exhibited the hierarchical porosity, with mesopores and macropores existing inside the macroporous silica gel, and micropores formed by the ZSM-5. The products have been characterized properly by using the XRD, SEM and N2 adsorption-desorption methods.

  7. Preparation of carbon monoliths from orange peel for NOx retention

    Directory of Open Access Journals (Sweden)

    Liliana Giraldo

    2014-12-01

    Full Text Available A series of monoliths are prepared from orange peels and chemically activated with H3PO4, KOH, ZnCl2, and water vapor without a binder. The monoliths were characterized by N2 adsorption-desorption isotherms at 77 K, Boehm titrations and XPS. Thereafter, monoliths were tested for their ability to establish NOx retention. The results show that the retention capacities of NOx were a function of the textural properties and chemistries. The carbons synthesized with ZnCl2 and KOH retained similar amounts of NOx.

  8. A decoupled monolithic projection method for natural convection problems

    Science.gov (United States)

    Pan, Xiaomin; Kim, Kyoungyoun; Lee, Changhoon; Choi, Jung-Il

    2016-06-01

    We propose an efficient monolithic numerical procedure based on a projection method for solving natural convection problems. In the present monolithic method, the buoyancy, linear diffusion, and nonlinear convection terms are implicitly advanced by applying the Crank-Nicolson scheme in time. To avoid an otherwise inevitable iterative procedure in solving the monolithic discretized system, we use a linearization of the nonlinear convection terms and approximate block lower-upper (LU) decompositions along with approximate factorization. Numerical simulations demonstrate that the proposed method is more stable and computationally efficient than other semi-implicit methods, preserving temporal second-order accuracy.

  9. Medio-lateral entry pin versus lateral entry pin for displaced pediatric supracondylar fractures: A comparative, prospective study

    Directory of Open Access Journals (Sweden)

    Manoj Kandel

    2016-01-01

    Full Text Available Background & Objectives: Supracondylar fracture is one of the commonest fractures in children. Although the technique of pinning is controversial, percutaneous medio-lateral entry pinning is theoretically considered more stable biomechanical construct. The drawback of this method is injury to ulnar nerve which is not encountered in only lateral entry pinning.Materials & Methods: This was a prospective, comparative and observational study done in 60 patients which was alternately divided into two groups. The first group (A underwent medio-lateral entry pinning and the second group (B underwent lateral entry pinning. They were followed for 24 weeks and the outcome was assessed using Flynn’s criteria.Results: At twenty-four weeks, the mean loss of range of motion of elbow in medio-lateral pinning group was 3.70 degrees (SD±1.93 and that in lateral pinning group was 4.23 degrees (SD ±1.38. The mean loss in carrying angle at twenty-four weeks in medio-lateral group was 2.93 degrees (SD±2.19 and that in lateral group was 4.17 (SD±2.24. There were 2 (6.67% cases of iatrogenic ulnar nerve injury in medio-lateral pinning group. Out of thirty patients, in medio-lateral pinning group, 25 had excellent results, 5 had good results and none had fair or poor results. While out of 30 patients in lateral pinning group, 23 had excellent results, 7 had good results and none had fair or poor results.Conclusion: There is no significant difference in outcome in terms of loss of carrying angle and range of motion between the medio-lateral pinning group and the lateral pinning group at the end of 6 months.Journal of College of Medical Sciences-Nepal, Vol.11(4 2015: 28-31

  10. Hyperchaos via X-Diode

    DEFF Research Database (Denmark)

    Lindberg, Erik; Tamasevicius, A.; Cenys, A.

    1998-01-01

    A Chaos diode (X-diode) with a hysteric current-voltage characteristic has been used to generate hyperchaotic oscillations characterized with multiple positive Lyapunov exponents. The hyperchaotic oscillators comprise a X-diode in parallel with an M'th order LC loop (M.GE.4). Numerical simulations...... and hardware experiments have beeen performed. An appropriate mathematical model is provided and is used to calculate the Lyapunov exponents. Synchronization properties have been investigated....

  11. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  12. Fluorescent SiC and its application to white light-emitting diodes*

    Institute of Scientific and Technical Information of China (English)

    Satoshi Kamiyama; Motoaki Iwaya; Tetsuya Takeuchi; Isamu Akasaki; Mikael Syv(a)j(a)rvi; Rositza Yakimova

    2011-01-01

    Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations,has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination.This material can be used as a substrate for a nearUV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.

  13. Monolithic all-fiber repetition-rate tunable gain-switched single-frequency Yb-doped fiber laser.

    Science.gov (United States)

    Hou, Yubin; Zhang, Qian; Qi, Shuxian; Feng, Xian; Wang, Pu

    2016-12-12

    We report a monolithic gain-switched single-frequency Yb-doped fiber laser with widely tunable repetition rate. The single-frequency laser operation is realized by using an Yb-doped distributed Bragg reflection (DBR) fiber cavity, which is pumped by a commercial-available laser diode (LD) at 974 nm. The LD is electronically modulated by the driving current and the diode output contains both continuous wave (CW) and pulsed components. The CW component is set just below the threshold of the single-frequency fiber laser for reducing the requirement of the pump pulse energy. Above the threshold, the gain-switched oscillation is trigged by the pulsed component of the diode. Single-frequency pulsed laser output is achieved at 1.063 μm with a pulse duration of ~150 ns and a linewidth of 14 MHz. The repetition rate of the laser output can be tuned between 10 kHz and 400 kHz by tuning the electronic trigger signal. This kind of lasers shows potential for the applications in the area of coherent LIDAR etc.

  14. LSST primary/tertiary monolithic mirror

    Science.gov (United States)

    Sebag, J.; Gressler, W.; Liang, M.; Neill, D.; Araujo-Hauck, C.; Andrew, J.; Angeli, G.; Cho, M.; Claver, C.; Daruich, F.; Gessner, C.; Hileman, E.; Krabbendam, V.; Muller, G.; Poczulp, G.; Repp, R.; Wiecha, O.; Xin, B.; Kenagy, K.; Martin, H. M.; Tuell, M. T.; West, S. C.

    2016-08-01

    At the core of the Large Synoptic Survey Telescope (LSST) three-mirror optical design is the primary/tertiary (M1M3) mirror that combines these two large mirrors onto one monolithic substrate. The M1M3 mirror was spin cast and polished at the Steward Observatory Mirror Lab at The University of Arizona (formerly SOML, now the Richard F. Caris Mirror Lab at the University of Arizona (RFCML)). Final acceptance of the mirror occurred during the year 2015 and the mirror is now in storage while the mirror cell assembly is being fabricated. The M1M3 mirror will be tested at RFCML after integration with its mirror cell before being shipped to Chile.

  15. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  16. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  17. Machining distortion prediction of aerospace monolithic components

    Institute of Scientific and Technical Information of China (English)

    Yun-bo BI; Qun-lin CHENG; Hui-yue DONG; Ying-lin KE

    2009-01-01

    To predict the distortion of aerospace monolithic components.a model is established to simulate the numerical control (NC)milling process using 3D finite element method(FEM).In this model,the cutting layer is simplified firstly.Then,the models of cutting force and cutting temperature are established to gain the cutting loads,which are applied to the mesh model of the part.Finally,a prototype of machining simulation environment is developed to simulate the milling process of a spar.Key factors influencing the distortion,such as initial residual stress,cutting loads,fixture layout,cutting sequence,and tool path are considered all together.The total distortion of the spar is predicted and an experiment is conducted to validate the numerical results.It is found that the maximum discrepancy between the simulation results and experiment values is 19.0%

  18. Solid oxide fuel cell having monolithic core

    Science.gov (United States)

    Ackerman, J. P.; Young, J. E.

    1983-10-01

    A solid oxide fuel cell is described for electrochemically combining fuel and oxidant for generating galvanic output, wherein the cell core has an array of electrolyte and interconnect walls that are substantially devoid of any composite inert materials for support. The core is monolithic, where each electrolyte wall consists of thin layers of cathode and anode materials sandwiching a thin layer of electrolyte material. The electrolyte walls are arranged and backfolded between adjacent interconnect walls operable to define a plurality of core passageways alternately arranged where the inside faces have only the anode material or only the cathode material exposed. Each layer of the electrolyte and interconnect materials 0.002 to 0.01 cm thick; and each layer of the cathode and anode materials is 0.002 to 0.05 cm thick.

  19. Silver deposition on chemically treated carbon monolith

    Directory of Open Access Journals (Sweden)

    Jovanović Zoran M.

    2009-01-01

    Full Text Available Carbon monolith was treated with HNO3, KOH and H2O2. Effects of these treatments on the surface functional groups and on the amount of silver deposited on the CM surface were studied by temperature programmed desorption (TPD and atomic absorption spectrometry (AAS. As a result of chemical treatment there was an increase in the amount of surface oxygen complexes. The increase in the amount of silver deposit is proportional to the amount of surface groups that produce CO under decomposition. However, the high amount of CO groups, decomposing above 600°C, induces the smaller Ag crystallite size. Therefore, the high temperature CO evolving oxides are, most likely, the initial centers for Ag deposition.

  20. Wear of human enamel opposing monolithic zirconia, glass ceramic, and composite resin: an in vitro study.

    Science.gov (United States)

    Sripetchdanond, Jeerapa; Leevailoj, Chalermpol

    2014-11-01

    Demand is increasing for ceramic and composite resin posterior restorations. However, ceramics are recognized for their high abrasiveness to opposing dental structure. The purpose of this study was to investigate the wear of enamel as opposed to dental ceramics and composite resin. Twenty-four test specimens (antagonists), 6 each of monolithic zirconia, glass ceramic, composite resin, and enamel, were prepared into cylindrical rods. Enamel specimens were prepared from 24 extracted human permanent molar teeth. Enamel specimens were abraded against each type of antagonist with a pin-on-disk wear tester under a constant load of 25 N at 20 rpm for 4800 cycles. The maximum depth of wear (Dmax), mean depth of wear (Da), and mean surface roughness (Ra) of the enamel specimens were measured with a profilometer. All data were statistically analyzed by 1-way ANOVA, followed by the Tukey test (α=.05). A paired t test was used to compare the Ra of enamel at baseline and after testing. The wear of both the enamel and antagonists was evaluated qualitatively with scanning electron microscopic images. No significant differences were found in enamel wear depth (Dmax, Da) between monolithic zirconia (2.17 ±0.80, 1.83 ±0.75 μm) and composite resin (1.70 ±0.92, 1.37 ±0.81 μm) or between glass ceramic (8.54 ±2.31, 7.32 ±2.06 μm) and enamel (10.72 ±6.31, 8.81 ±5.16 μm). Significant differences were found when the enamel wear depth caused by monolithic zirconia and composite resin was compared with that of glass ceramic and enamel (Pcomposite resin resulted in less wear depth to human enamel compared with glass ceramic and enamel. All test materials except composite resin similarly increased the enamel surface roughness after wear testing. Copyright © 2014 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  1. Nanoengineering of Flux Pinning Sites in High-Tc Superconductors

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Volume pinning forces were determined for a variety of bulk high-Tcsuperconductors of the 123-type from magnetization measurements. By means of scaling of the pinning forces, the acting pinning mechanisms in various temperature ranges were identified. The Nd-based superconductors and some YBCO crystalsexhibited a dominating pinning of the δTc-type (i.e., small, superconducting pinning sites). In contrast to this, the addition of insulating 211 particles provided pinning of the δl-type; providing effective pinning in the entire temperature range acting as a "background" pinning mechanism for the peak effect. Due to the small coherence lengths of the high-Tc compounds, effective pinning sites are defects or particles of nanometer size relative to ξ3. Integral magnetic measurements of the magnetization as a function of temperature in large applied magnetic fields (up to 7 T) revealed that practically all high-Tc compounds were spatially inhomogeneous, which could be caused byoxygen deficiency (YBCO), solid solutions of Nd/Ba (NdBCO and other light rare earth compounds), intergrowths (Bi-based superconductors), and doping by pair-breaking dopants like Zn, Pr. This implies that the superconducting sample consists of stronger and weaker superconducting areas, coupled together. In large appliedfields, this coupling gets broken and the magnetization versus temperature curves revealed more than one superconducting transition. In contrast, irradiation experiments by neutrons, protons, and heavy-ions enabled the artificial introduction of very effective pinning sites into the high-Tc superconductors, thus creating a large variety of different observations using magnetic data. From all these observations, we construct a pinning diagram for bulk high-Tc superconductors explaining many features observed in high-Tc samples.

  2. Monolithic Rare Earth Doped PTR Glass Laser Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The main goal of the project is to demonstrate the feasibility of a monolithic solid state laser on the basis of PTR glass co-doped with luminescent rare earth ions....

  3. Plant oil-based shape memory polymer using acrylic monolith

    Directory of Open Access Journals (Sweden)

    T. Tsujimoto

    2015-09-01

    Full Text Available This article deals with the synthesis of a plant oil-based material using acrylic monolith. An acrylic monolith bearing oxirane groups was prepared via simple technique that involved the dissolution of poly(glycidyl methacrylate-comethyl methacrylate (PGMA in ethanolic – aqueous solution by heating and subsequent cooling. The PGMA monolith had topologically porous structure, which was attributed to the phase separation of the polymer solution. The PGMA monolith was impregnated by epoxidized soybean oil (ESO containing thermally-latent catalyst, and the subsequent curing produced a crosslinked material with relatively good transparency. The Young’s modulus and the tensile strength of polyESO/PGMA increased compared with the ESO homopolymer. The strain at break of polyESO/PGMA was larger than that of the ESO homopolymer and crosslinked PGMA. Furthermore, polyESO/PGMA exhibited good shape memory-recovery behavior.

  4. Application of monolithic chromatographic supports in virus research.

    Science.gov (United States)

    Krajacic, Mladen; Ravnikar, Maja; Štrancar, Aleš; Gutiérrez-Aguirre, Ion

    2017-05-12

    Key properties of monolithic chromatographic supports, make them suitable for separation and/or concentration of large biomolecules, especially virus particles and viral genomes. One by one, the studies that have been completed so far, contributed to the knowledge that monolith chromatography has hardly any limitation to be applied in virus research. Viruses of different sizes, possessing icosahedral structure and symmetrical morphology, as well as rod-shaped or filamentous viruses with helical structure, even enveloped ones, all of them could be successfully managed by means of monolith chromatography. Same is true for viral genomes, primarily when being distinct from other nucleic acid forms present in a host cell. This review is exclusively focused on viruses. It describes the application of monolith chromatography to different problematics within the virus research field. The reviewed achievements offer new possibilities and trigger new aspects in virology. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Monolithic Perovskite Silicon Tandem Solar Cells with Advanced Optics

    Energy Technology Data Exchange (ETDEWEB)

    Goldschmidt, Jan C.; Bett, Alexander J.; Bivour, Martin; Blasi, Benedikt; Eisenlohr, Johannes; Kohlstadt, Markus; Lee, Seunghun; Mastroianni, Simone; Mundt, Laura; Mundus, Markus; Ndione, Paul; Reichel, Christian; Schubert, Martin; Schulze, Patricia S.; Tucher, Nico; Veit, Clemens; Veurman, Welmoed; Wienands, Karl; Winkler, Kristina; Wurfel, Uli; Glunz, Stefan W.; Hermle, Martin

    2016-11-14

    For high efficiency monolithic perovskite silicon tandem solar cells, we develop low-temperature processes for the perovskite top cell, rear-side light trapping, optimized perovskite growth, transparent contacts and adapted characterization methods.

  6. Effect of accelerated aging on translucency of monolithic zirconia

    Directory of Open Access Journals (Sweden)

    O. Abdelbary

    2016-12-01

    Conclusion: Thickness of zirconia has significant effect on translucency. Aging has significant effect on thinner sections of zirconia. More research is required on zirconia towards making the material more translucent for its potential use as esthetic monolithic restoration.

  7. Monolithic CMOS pixel detector for international linear collider vertex detection

    Indian Academy of Sciences (India)

    J E Brau; O Igonkina; N Sinew; D Strom; C Baltay; W Emmet; H Neal; D Rabinowitz

    2007-12-01

    A monolithic CMS pixel detector is under development for an ILC experiment. This chronopixel array provides a time stamp resolution of one bunch crossing, a critical feature for background suppression. The status of this effort is summarized.

  8. Characterization of the passivation processes for PIN structures

    Energy Technology Data Exchange (ETDEWEB)

    Avila Garcia, Alejandro; Reyes Barranca, Mario Alfredo [Instituto Politecnico Nacional, Mexico, D.F (Mexico); Zarate Corona, Oscar [Universidad Autonoma de Puebla, Puebla (Mexico)

    2001-02-01

    Result on the evaluation of PIN structures made on crystalline silicon, processed in our laboratory, which underwent several gettering treatments are reported. Structures were evaluated through the measurement of lifetime {tau} and I-V characteristic. Also, deep levels due to defects were characterized; the activation energy (E{sub c} -E{sub t}), capture cross section {sigma} and relative concentration (N{sub t} / N{sub d}) were obtained. Techniques used in the characterization were Output Circuit Voltage Decay (OCVD), Current-Voltage measurements (I-V) and Deep Level Transient Spectroscopy (DLTS), respectively. These measurements show variations in the parameters, as a result of the gettering techniques applied. The best results were achieved for two types of samples: the first having high phosphorus concentration, no backside damage and annealed at 850 Celsius degrees without HCI atmosphere; the second having low phosphorus concentration, no backside damage and annealed at 850 Celsius degrees without HCI atmosphere. For these samples, the minority carrier lifetime was near 3{upsilon}s, the I-V characteristics imply that conductivity modulation takes place within the intrinsic region even for low voltages, as in commercial diodes. Two defects were observed to remain after the gettering processes: one is related to the phosphorus-vacant pair and the other to the divacancy. Concentrations could be decreased from {approx}4 x 10{sup 1}1cm{sup -3} down to 3 x 10{sup -9} cm{sup -3} for the first and down to 2 x 10{sup 1}0 cm{sup -3} for the second one. [Spanish] Se reportan resultados de la evaluacion de estructuras PIN en silicio procesadas en nuestro laboratorio, las cuales fueron sometidas a diversos tratamientos de gettering. Las estructuras fueron evaluadas a traves de la medicion de tiempo de vida {tau} y la caracteristica I-V. Se caracterizaron tambien los defectos que introducen niveles profundos en la region activa del dispositivo, obteniendo energia de

  9. Fundamental Characteristics of a Pinned Photodiode CMOS Pixels

    NARCIS (Netherlands)

    Xu, Y.

    2015-01-01

    This thesis gives an insightful analysis of the pinned photodiode 4T CMOS pixel from three different aspects. Firstly, from the charge accumulated aspect, the PPD full well capacity and related parameters of influence are investigated such as the pinning voltage, and transfer gate potential barrier.

  10. IMp: The customizable LEGO(®) Pinned Insect Manipulator.

    Science.gov (United States)

    Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

    2015-01-01

    We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  11. Performance characteristics between monolithic and microservice-based systems

    OpenAIRE

    Flygare, Robin; Holmqvist, Anthon

    2017-01-01

    A new promising technology to face the problem of scalability and availability is the microservice architecture. The problem with this architecture is that there is no significant study that clearly proves the performance differences compared to the monolithic architecture. Our thesis aims to provide a more conclusive answer of how the microservice architecture differs performance wise compared to the monolithic architecture. In this study, we conducted several experiments on a self-developed...

  12. Sol-Gel Synthesis of Non-Silica Monolithic Materials

    Directory of Open Access Journals (Sweden)

    Bartłomiej Gaweł

    2010-04-01

    Full Text Available Monolithic materials have become very popular because of various applications, especially within chromatography and catalysis. Large surface areas and multimodal porosities are great advantages for these applications. New sol-gel preparation methods utilizing phase separation or nanocasting have opened the possibility for preparing materials of other oxides than silica. In this review, we present different synthesis methods for inorganic, non-silica monolithic materials. Some examples of application of the materials are also included.

  13. Reliability Analysis and Optimal Design of Monolithic Vertical Wall Breakwaters

    DEFF Research Database (Denmark)

    Sørensen, John Dalsgaard; Burcharth, Hans F.; Christiani, E.

    1994-01-01

    Reliability analysis and reliability-based design of monolithic vertical wall breakwaters are considered. Probabilistic models of the most important failure modes, sliding failure, failure of the foundation and overturning failure are described . Relevant design variables are identified and relia......Reliability analysis and reliability-based design of monolithic vertical wall breakwaters are considered. Probabilistic models of the most important failure modes, sliding failure, failure of the foundation and overturning failure are described . Relevant design variables are identified...

  14. Extended Leach Testing of Simulated LAW Cast Stone Monoliths

    Energy Technology Data Exchange (ETDEWEB)

    Serne, R. Jeffrey [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Westsik, Joseph H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jung, H. B. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Wang, Guohui [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-07-09

    This report describes the results from long-term laboratory leach tests performed at Pacific Northwest National Laboratory (PNNL) for Washington River Protection Solutions (WRPS) to evaluate the release of key constituents from monoliths of Cast Stone prepared with four simulated low-activity waste (LAW) liquid waste streams. Specific objectives of the Cast Stone long-term leach tests described in this report focused on four activities: 1. Extending the leaching times for selected ongoing EPA-1315 tests on monoliths made with LAW simulants beyond the conventional 63-day time period up to 609 days reported herein (with some tests continuing that will be documented later) in an effort to evaluate long-term leaching properties of Cast Stone to support future performance assessment activities. 2. Starting new EPA-1315 leach tests on archived Cast Stone monoliths made with four LAW simulants using two leachants (deionized water [DIW] and simulated Hanford Integrated Disposal Facility (IDF) Site vadose zone pore water [VZP]). 3. Evaluating the impacts of varying the iodide loading (starting iodide concentrations) in one LAW simulant (7.8 M Na Hanford Tank Waste Operations Simulator (HTWOS) Average) by manufacturing new Cast Stone monoliths and repeating the EPA-1315 leach tests using DIW and the VZP leachants. 4. Evaluating the impacts of using a non-pertechnetate form of Tc that is present in some Hanford tanks. In this activity one LAW simulant (7.8 M Na HTWOS Average) was spiked with a Tc(I)-tricarbonyl gluconate species and then solidified into Cast Stone monoliths. Cured monoliths were leached using the EPA-1315 leach protocol with DIW and VZP. The leach results for the Tc-Gluconate Cast Stone monoliths were compared to Cast Stone monoliths pertechnetate.

  15. High-repetition-rate quasi-CW side-pumped mJ eye-safe laser with a monolithic KTP crystal for intracavity optical parametric oscillator.

    Science.gov (United States)

    Cho, C Y; Chen, Y C; Huang, Y P; Huang, Y J; Su, K W; Chen, Y F

    2014-04-01

    We demonstrate a high-repetition-rate millijoule passively Q-switched eye-safe Nd:YVO(4) laser pumped by a quasi-CW diode stack. A theoretical analysis has been explored for the design criteria of generating TEM(n,0) mode in the diode-stack directly side-pumping configuration. We successfully generate TEM(n,0) modes at 1064 nm by adjusting the gain medium with respected to the laser axis. We further observe the spatial cleaning ability for generating an nearly TEM(0,0) mode output at 1573 nm with a monolithic OPO cavity. At the repetition rate up to 200 Hz, the output pulse energy reaches 1.21 mJ with the threshold pump energy of 17.9 mJ.

  16. Mechanically stable, hierarchically porous Cu3(btc)2 (HKUST-1) monoliths via direct conversion of copper(II) hydroxide-based monoliths.

    Science.gov (United States)

    Moitra, Nirmalya; Fukumoto, Shotaro; Reboul, Julien; Sumida, Kenji; Zhu, Yang; Nakanishi, Kazuki; Furukawa, Shuhei; Kitagawa, Susumu; Kanamori, Kazuyoshi

    2015-02-28

    The synthesis of highly crystalline macro-meso-microporous monolithic Cu3(btc)2 (HKUST-1; btc(3-) = benzene-1,3,5-tricarboxylate) is demonstrated by direct conversion of Cu(OH)2-based monoliths while preserving the characteristic macroporous structure. The high mechanical strength of the monoliths is promising for possible applications to continuous flow reactors.

  17. Heat transfer enhancement by pin elements

    Energy Technology Data Exchange (ETDEWEB)

    Sahiti, N.; Durst, F.; Dewan, A. [LSTM-Erlangen, Institute of Fluid Mechanics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Cauerstrasse 4, D-91058 Erlangen (Germany)

    2005-11-01

    Heat transfer enhancement is an active and important field of engineering research since increases in the effectiveness of heat exchangers through suitable heat transfer augmentation techniques can result in considerable technical advantages and savings of costs. Considerable enhancements were demonstrated in the present work by using small cylindrical pins on surfaces of heat exchangers. A partly quantitative theoretical treatment of the proposed method is presented. It uses simple relationships for the conductive and convective heat transfer to derive an equation that shows which parameters permit the achievement of heat transfer enhancements. Experiments are reported that demonstrate the effectiveness of the results of the proposed approach. It is shown that the suggested method of heat transfer enhancements is much more effective than existing methods, since it results in an increase in heat transfer area (like fins) and also an increase in the heat transfer coefficient. (author)

  18. Cracking Bank PINs by Playing Mastermind

    Science.gov (United States)

    Focardi, Riccardo; Luccio, Flaminia L.

    The bank director was pretty upset noticing Joe, the system administrator, spending his spare time playing Mastermind, an old useless game of the 70ies. He had fought the instinct of telling him how to better spend his life, just limiting to look at him in disgust long enough to be certain to be noticed. No wonder when the next day the director fell on his chair astonished while reading, on the newspaper, about a huge digital fraud on the ATMs of his bank, with millions of Euros stolen by a team of hackers all around the world. The article mentioned how the hackers had 'played with the bank computers just like playing Mastermind', being able to disclose thousands of user PINs during the one-hour lunch break. That precise moment, a second before falling senseless, he understood the subtle smile on Joe's face the day before, while training at his preferred game, Mastermind.

  19. Flux pinning characteristics and irreversibility line in high temperature superconductors

    Science.gov (United States)

    Matsushita, T.; Ihara, N.; Kiuchi, M.

    1995-01-01

    The flux pinning properties in high temperature superconductors are strongly influenced by thermally activated flux motion. The scaling relation of the pinning force density and the irreversibility line in various high temperature superconductors are numerically analyzed in terms of the flux creep model. The effect of two factors, i.e., the flux pinning strength and the dimensionality of the material, on these properties are investigated. It is speculated that the irreversibility line in Bi-2212 superconductors is one order of magnitude smaller than that in Y-123, even if the flux pinning strength in Bi-2212 is improved up to the level of Y-123. It is concluded that these two factors are equally important in determination of the flux pinning characteristics at high temperatures.

  20. Nano-engineered pinning centres in YBCO superconducting films

    Science.gov (United States)

    Crisan, A.; Dang, V. S.; Mikheenko, P.

    2017-02-01

    For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface or point) and on their character (normal cores or Δκ cores). Different samples have been produced by Pulsed Laser Deposition, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. They have been characterized by SQUID Magnetic Properties Measurement System and Physical Properties Measurement System, as well as by Transmission Electron Microscopy (TEM). Correlations between pinning architecture, TEM images, and critical currents at various fields and field orientations will be shown for a large number of YBa2Cu3Ox films with various types and architectures of artificial pinning centres.

  1. New Pin Puller Based on SMA Technology for Space Applications

    Science.gov (United States)

    Nava, Nestor; Collado, Marcelo; Cabás, Ramiro

    2014-07-01

    Two different versions of the Pin Puller were designed during this activity, such as one with 100 N and other with 500 N of pull force. The design of both versions is based on spheres which support the pin at the initial position and a compression spring driving once the release takes place by means of the SMA. The mechanical design of the Pin Pullers has been conceived in order to optimize the device's weight, reduce the parts complexity, and achieve a suitable stiffness. A qualification test campaign for the Pin Puller with 500 N of pull force has been developed in order to check the success of the proposed mechanism for space applications. The main performed tests have been thermal-vacuum actuation, thermal-vacuum cycling, sine vibration, and random vibration. The Pin Puller has presented successful results of actuation during the test campaign

  2. In vitro analysis of self-shearing retentive pins.

    Science.gov (United States)

    Collard, E W; Caputo, A A; Standlee, J P; Duncanson, M G

    1981-02-01

    Combining stress, analysis, microscopic examination, mechanical testing of the shear mechanism, and retention of the Reten Pin leads to the following conclusions: 1. The suggested 0.006 inch pin-channel mismatch induces high lateral and apical stresses. Microscopically, this was seen to correlate with injury to the dentin. 2. The degree of retention was increased by using a smaller pin-channel mismatch. This correlates with smaller stresses and reduced dentinal damage. 3. The shear mechanism acts in a uniform manner, with a relatively small variation from the mean. It is suggested that for the best results the manufacturer should supply larger twist drills and pins with a somewhat deeper self-shearing groove to minimize apical involvement during shearing of the handle from the pin.

  3. Pinning Lur’e Complex Networks via Output Feedback Control

    Directory of Open Access Journals (Sweden)

    Fang Liu

    2014-01-01

    Full Text Available Without requiring the full-state information of network nodes, this paper studies the pinning synchronization in a network of Lur’e dynamical systems based on the output feedback control strategy. Some simple pinning conditions are established for both undirected and directed Lur’e networks by using M-matrix theory and S-procedure technique. With the derived stability criteria, the pinning synchronization problem of large-scale Lur’e networks can be transformed to the test of a low-dimensional linear matrix inequality. Some remarks are further given to address the selection of pinned nodes and the design of pinning feedback gains. Numerical results are provided to demonstrate the effectiveness of the theoretical analysis.

  4. Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser.

    Science.gov (United States)

    Bain, F M; Lagatsky, A A; Kurilchick, S V; Kisel, V E; Guretsky, S A; Luginets, A M; Kalanda, N A; Kolesova, I M; Kuleshov, N V; Sibbett, W; Brown, C T A

    2009-02-02

    A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148 mW and thresholds as low as 40 mW were demonstrated during continuous-wave operation. Pulses of 170 ns duration with maximum pulse energy of 44 nJ at a 722 kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror.

  5. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  6. Retractable Pin Tools for the Friction Stir Welding Process

    Science.gov (United States)

    1998-01-01

    Two companies have successfully commercialized a specialized welding tool developed at the Marshall Space Flight Center (MSFC). Friction stir welding uses the high rotational speed of a tool and the resulting frictional heat created from contact to crush, 'stir' together, and forge a bond between two metal alloys. It has had a major drawback, reliance on a single-piece pin tool. The pin is slowly plunged into the joint between two materials to be welded and rotated as high speed. At the end of the weld, the single-piece pin tool is retracted and leaves a 'keyhole,' something which is unacceptable when welding cylindrical objects such as drums, pipes and storage tanks. Another drawback is the requirement for different-length pin tools when welding materials of varying thickness. An engineer at the MSFC helped design an automatic retractable pin tool that uses a computer-controlled motor to automatically retract the pin into the shoulder of the tool at the end of the weld, preventing keyholes. This design allows the pin angle and length to be adjusted for changes in material thickness and results in a smooth hole closure at the end of the weld. Benefits of friction stir welding, using the MSFC retractable pin tool technology, include the following: The ability to weld a wide range of alloys, including previously unweldable and composite materials; provision of twice the fatigue resistance of fusion welds and no keyholes; minimization of material distortion; no creation of hazards such as welding fumes, radiation, high voltage, liquid metals, or arcing; automatic retraction of the pin at the end of the weld; and maintaining full penetration of the pin.

  7. Monoliths: A Review of the Basics, Preparation Methods and Their Relevance to Oxidation

    Directory of Open Access Journals (Sweden)

    Sandeeran Govender

    2017-02-01

    Full Text Available Considerable research has been conducted on monolithic catalysts for various applications. Strategies toward coating monoliths are of equal interest and importance. In this paper, the preparation of monoliths and monolithic catalysts have been summarized. More specifically, a brief explanation for the manufacturing of ceramic and metallic monoliths has been provided. Also, different methods for coating γ-alumina, as a secondary support, are included. Techniques used to deposit metal-based species, zeolites and carbon onto monoliths are discussed. Furthermore, monoliths extruded with metal oxides, zeolites and carbon are described. The main foci are on the reasoning and understanding behind the preparation of monolithic catalysts. Ideas and concerns are also contributed to encourage better approaches when designing these catalysts. More importantly, the relevance of monolithic structures to reactions, such as the selective oxidation of alkanes, catalytic combustion for power generation and the preferential oxidation of carbon monoxide, has been described.

  8. Gallium phosphide high temperature diodes

    Science.gov (United States)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  9. Polymethacrylate monolithic and hybrid particle-monolithic columns for reversed-phase and hydrophilic interaction capillary liquid chromatography.

    Science.gov (United States)

    Jandera, Pavel; Urban, Jirí; Skeríková, Veronika; Langmaier, Pavel; Kubícková, Romana; Planeta, Josef

    2010-01-01

    We prepared hybrid particle-monolithic polymethacrylate columns for micro-HPLC by in situ polymerization in fused silica capillaries pre-packed with 3-5microm C(18) and aminopropyl silica bonded particles, using polymerization mixtures based on laurylmethacrylate-ethylene dimethacrylate (co)polymers for the reversed-phase (RP) mode and [2-(methacryloyloxy)ethyl]-dimethyl-(3-sulfopropyl) zwitterionic (co)polymers for the hydrophilic interaction (HILIC) mode. The hybrid particle-monolithic columns showed reduced porosity and hold-up volumes, approximately 2-2.5 times lower in comparison to the pure monolithic columns prepared in the whole volume of empty capillaries. The elution volumes of sample compounds are also generally lower in comparison to packed or pure monolithic columns. The efficiency and permeability of the hybrid columns are intermediate in between the properties of the reference pure monolithic and particle-packed columns. The chemistries of the embedded solid particles and of the interparticle monolithic moiety in the hybrid capillary columns contribute to the retention to various degrees, affecting the selectivity of separation. Some hybrid columns provided improved separations of proteins in comparison to the reference particle-packed columns in the reversed-phase mode. Zwitterionic hybrid particle-monolithic columns show dual mode retention HILIC/RP behaviour depending on the composition of the mobile phase and allow separations of polar compounds such as phenolic acids in the HILIC mode at lower concentrations of acetonitrile and, often in shorter analysis time in comparison to particle-packed and full-volume monolithic columns.

  10. A pinning puzzle: two similar, non-superconducting chemical deposits in YBCO-one pins, the other does not

    Energy Technology Data Exchange (ETDEWEB)

    Sawh, Ravi-Persad; Weinstein, Roy; Gandini, Alberto; Skorpenske, Harley; Parks, Drew, E-mail: Weinstein@uh.ed [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Department of Physics, University of Houston, Houston, TX 77204-5005 (United States); Texas Center for Superconductivity at UH, University of Houston, Houston, TX 77204-5002 (United States)

    2009-09-15

    The pinning effects of two kinds of U-rich deposits in YBCO (YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}) are compared. One is a five-element compound, (U{sub 0.6}Pt{sub 0.4})YBa{sub 2}O{sub 6}, which is a paramagnetic double perovskite which forms as profuse stable nanosize deposits, and pins very well. The other is a four-element compound, (U{sub 0.4}Y{sub 0.6})BaO{sub 3}, which is a ferromagnetic single perovskite which forms as profuse stable nanosize deposits and pins very weakly or not at all. The pinning comparison is done with nearly equal deposit sizes and number of deposits per unit volume for the two compounds. Evidence for the pinning capability, chemical makeup, x-ray diffraction signature, and magnetic properties of the two compounds is reported.

  11. Development of silicon monolithic arrays for dosimetry in external beam radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Bisello, Francesca, E-mail: francesca.bisello@iba-group.com [IBA Dosimetry GmbH, Schwarzenbruck (Germany); Friedrich-Alexander Universität Erlangen—Nürnberg, Erlangen (Germany); Menichelli, David [IBA Dosimetry GmbH, Schwarzenbruck (Germany); Scaringella, Monica [University of Florence, Firenze (Italy); INFN—Florence Division, Sesto Fiorentino (Italy); Talamonti, Cinzia; Zani, Margherita; Bucciolini, Marta [University of Florence, Firenze (Italy); Azienda Ospedaliera Unversitaria Careggi, Firenze (Italy); Bruzzi, Mara [University of Florence, Firenze (Italy); INFN—Florence Division, Sesto Fiorentino (Italy)

    2015-10-01

    New tools for dosimetry in external beam radiotherapy have been developed during last years in the framework of the collaboration among the University of Florence, INFN Florence and IBA Dosimetry. The first step (in 2007) was the introduction in dosimetry of detector solutions adopted from high energy physics, namely epitaxial silicon as the base detector material and a guard ring in diode design. This allowed obtaining state of the art radiation hardness, in terms of sensitivity dependence on accumulated dose, with sensor geometry particularly suitable for the production of monolithic arrays with modular design. Following this study, a 2D monolithic array has been developed, based on 6.3×6.3 cm{sup 2} modules with 3 mm pixel pitch. This prototype has been widely investigated and turned out to be a promising tool to measure dose distributions of small and IMRT fields. A further linear array prototype has been recently design with improve spatial resolution (1 mm pitch) and radiation hardness. This 24 cm long device is constituted by 4×64 mm long modules. It features low sensitivity changes with dose (0.2%/kGy) and dose per pulse (±1% in the range 0.1–2.3 mGy/pulse, covering applications with flattened and unflattened photon fields). The detector has been tested with very satisfactory results as a tool for quality assurance of linear accelerators, with special regards to small fields, and proton pencil beams. In this contribution, the characterization of the linear array with unflattened MV X-rays, {sup 60}Co radiation and 226 MeV protons is reported. - Highlights: • A silicon monolithic 1D array with 1 mm pixel pitch was developed. • The detector was characterized with {sup 60}Co, unflattened MV X-rays, 226 MeV protons. • Dose linearity in clinical relevance range and dose profiles were measured. • The detector performs good agreement with reference detectors. • The technology is suitable in dose profiling in MV X-ray and proton therapy.

  12. Dissecting Pin1 and phospho-pRb regulation.

    Science.gov (United States)

    Rizzolio, Flavio; Caligiuri, Isabella; Lucchetti, Chiara; Fratamico, Robert; Tomei, Valentina; Gallo, Gaia; Agelan, Alexis; Ferrari, Giovanni; Toffoli, Giuseppe; Klein-Szanto, Andres J; Giordano, Antonio

    2013-01-01

    The activity of the Retinoblastoma protein, the master regulator of the cell cycle, is finely regulated by phosphorylation. CDKs and cyclins are major players in phosphorylation and it has been recently discovered that the prolyl isomerase Pin1 is an essential protein that orchestrates this process. In this article, we report new findings regarding the role of Pin1 in the pRb pathway. Our data suggest that PI3K, CDKs, and the Pin1 axis have a critical role in sustaining the complete phosphorylation of pRb. Furthermore, we analyze the correlation between Pin1 and pRb phosphorylation in vivo. We show that, in human malignant glioma tissue microarrays (TMA) and in Pin1 knockout (KO) mice, there is a positive correlation between Pin1 and pRb phosphorylation. Prospectively, our findings suggest that the synergism between CDKs, Pin1, and PI3K inhibitors hold great promise for targeted pharmacological treatment of cancer patients, with the possibility of reaching high effectiveness at tolerated doses.

  13. Dedicated monolithic infrared spectrometer for process monitoring

    Science.gov (United States)

    Chadha, Suneet; Kyle, William; Bolduc, Roy A.; Curtiss, Lawrence E.

    1999-12-01

    Foster-Miller has leveraged its innovations in IR fiber- optic probes and the recent development of a miniature spectrometer to build a novel IR sensor system for process applications. The developed sensor systems is a low-cost alternative to process FTIR and filter based systems. A monolithic wedge-grating optic provides the spectral dispersion with low cost thermopile point or array detectors picking off the diffracted wavelengths from the optic. The integrated optic provides spectral discrimination between 3- 12 micrometers with resolution at 8 cm-1 or better and high overall optical throughput. The device has a fixed cylindrical grating uniquely bonded to the edge of a ZnSe conditioning 'wedge'. The conditioning optic overcomes limitations of concave gratings as it accepts high angle light at the narrow end of the wedge and progressively conditions it to be near normal to the grating. On return, the diffracted wavelengths are concentrated on the discrete or array detector elements by the wedge, providing throughput comparable to that of an FTIR. The miniature spectrometer coupled to flow through liquid cells or multipass gas cells provides significant cost advantage over conventional sampling methodologies. Currently, we are investigating process applications for the petroleum and dairy markets. The sensor system eliminates the cost, complexity, reliability and bandwidth/resolution problems associated with either Fabry Perot or Michelson Interferometer based approaches for low-cost process applications.

  14. The Advanced Virgo monolithic fused silica suspension

    Energy Technology Data Exchange (ETDEWEB)

    Aisa, D.; Aisa, S.; Campeggi, C.; Colombini, M. [University of Perugia and INFN Perugia (Italy); Conte, A. [University of Roma Sapienza and INFN Roma (Italy); Farnesini, L. [University of Perugia and INFN Perugia (Italy); Majorana, E.; Mezzani, F. [University of Roma Sapienza and INFN Roma (Italy); Montani, M. [University of Urbino and INFN Firenze (Italy); Naticchioni, L.; Perciballi, M. [University of Roma Sapienza and INFN Roma (Italy); Piergiovanni, F. [University of Urbino and INFN Firenze (Italy); Piluso, A. [University of Perugia and INFN Perugia (Italy); Puppo, P., E-mail: paola.puppo@roma1.infn.it [University of Roma Sapienza and INFN Roma (Italy); Rapagnani, P. [University of Roma Sapienza and INFN Roma (Italy); Travasso, F. [University of Perugia and INFN Perugia (Italy); Vicerè, A. [University of Urbino and INFN Firenze (Italy); Vocca, H. [University of Perugia and INFN Perugia (Italy)

    2016-07-11

    The detection of gravitational waves is one of the most challenging prospects faced by experimental physicists. Suspension thermal noise is an important noise source at operating frequencies between approximately 10 and 30 Hz, and represents a limit to the sensitivity of the ground based interferometric gravitational wave detectors. Its effects can be reduced by minimizing the losses and by optimizing the geometry of the suspension fiber as well as its attachment system. In this proceeding we will describe the mirrors double stage monolithic suspension system to be used in the Advanced Virgo (AdV) detector. We also present the results of the thermal noise study, performed with the help of a finite elements model, taking into account the precise geometry of the fibers attachment systems on the suspension elements. We shall demonstrate the suitability of this suspension for installation in AdV. - Highlights: • Suspension system design for the test masses of the gravitational wave detectors. • Finite element model studies. • Suspension thermal noise studies.

  15. Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Molpeceres, C. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain)], E-mail: carlos.molpeceres@upm.es; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain); Fernandez, S.; Gandia, J.J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Villar, F.; Nos, O.; Bertomeu, J. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2009-03-15

    Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

  16. Monolithic supports with unique geometries and enhanced mass transfer.

    Energy Technology Data Exchange (ETDEWEB)

    Stuecker, John Nicholas; Ferrizz, Robert Matthew; Cesarano, Joseph, III; Miller, James Edward

    2004-01-01

    The catalytic combustion of natural gas has been the topic of much research over the past decade. Interest in this technology results from a desire to decrease or eliminate the emissions of harmful nitrogen oxides (NOX) from gas turbine power plants. A low-pressure drop catalyst support, such as a ceramic monolith, is ideal for this high-temperature, high-flow application. A drawback to the traditional honeycomb monoliths under these operating conditions is poor mass transfer to the catalyst surface in the straight-through channels. 'Robocasting' is a unique process developed at Sandia National Laboratories that can be used to manufacture ceramic monoliths with alternative 3-dimensional geometries, providing tortuous pathways to increase mass transfer while maintaining low pressure drops. This report details the mass transfer effects for novel 3-dimensional robocast monoliths, traditional honeycomb-type monoliths, and ceramic foams. The mass transfer limit is experimentally determined using the probe reaction of CO oxidation over a Pt / {gamma}-Al{sub 2}O{sub 3} catalyst, and the pressure drop is measured for each monolith sample. Conversion versus temperature data is analyzed quantitatively using well-known dimensionless mass transfer parameters. The results show that, relative to the honeycomb monolith support, considerable improvement in mass transfer efficiency is observed for robocast samples synthesized using an FCC-like geometry of alternating rods. Also, there is clearly a trade-off between enhanced mass transfer and increased pressure drop, which can be optimized depending on the particular demands of a given application.

  17. Alar Pinning in Rigid External Distraction for Midfacial Hypoplasia.

    Science.gov (United States)

    Yu, Jenny L; Woo, Albert S

    2017-09-01

    Distraction osteogenesis with a rigid external distractor is a widely accepted treatment for midfacial hypoplasia. In this study, the authors introduce the utilization of alar pinning with the external halo distractor for maxillary advancement, in place of an oral splint. A retrospective chart review was conducted of 7 patients who successfully underwent distraction osteogenesis using the alar pinning technique. Midfacial hypoplasia was secondary to Crouzon syndrome (n = 4), Apert syndrome (n = 1), Pfeiffer syndrome (n = 1), or bacterial meningitis (n = 1). Three patients were managed with monobloc osteotomies, 2 with Le Fort III osteotomies, 1 with Le Fort III osteotomy and frontoorbital advancement, and 1 with Le Fort I osteotomy alone. Patient charts were analyzed for postoperative course and complications relating to the alar pins. Two patients had minor complications specifically related to the alar pins. One patient had concern for a mild skin infection at a pin site that resolved with oral antibiotics. The other patient had loosening of an alar pin, which did not require operative management. Retrospective chart review indicated that all patients were pleased with their results from the distraction, and no patients opted for further advancement. Utilization of alar pin sites for external distraction is a feasible and reasonable option for treatment of midfacial hypoplasia involving a Le Fort osteotomy or monobloc procedure. Fixation sites within the alar crease minimize the visibility of pin site scars and eliminate the need for a custom-made oral splint, which prevents usage of the upper dentition and frequently requires consulting a dentist or orthodontist for fabrication. Alar pinning with an external halo distraction system for management of midfacial hypoplasia has minimal complications and is an alternative to using a custom-made oral splint.

  18. "Safety pin"--a question to its safety!

    Science.gov (United States)

    Thapa Chettri, S; Bhattarai, M; Karki, S; Regmi, S; Mathur, N N

    2010-03-01

    Foreign body ingestion is not an uncommon problem in children. They can ingest various foreign objects and one of such objects is a safety pin. The ingestion of such foreign body is not widely reported in the literature. This case highlights the risk of accidental ingestion of safety pin used on child's clothing to protect him from cold that can result in lethal complications. In a poor developing country like Nepal, this case serves to address all mothers alerting them of their ignorance while using safety pin in infants. In addition, physicians are reminded to obtain a detailed inquiry of suspected foreign body ingestion in every child with the history of dysphagia.

  19. Noises of p-i-n UV photodetectors

    Science.gov (United States)

    Gasparyan, Ferdinand V.; Korman, Can E.; Melkonyan, Slavik V.

    2007-06-01

    Investigations of the static characteristics, responsivity, internal noises, and detectivity of the forward biased p-i-n photodetectors made on wide bandgap compensated semiconductors operating in double injection regime are presented. Noise related calculations are performed by utilizing "Impedance Field Method". Numerical simulations are made assessing 4H-SiC and GaN biased p-i-n photodiodes noise related characteristics. It is shown that forward biased p-i-n photodiodes have low level of thermal and generation-recombination noises and high values of sensitivity and detectivity at the room temperature.

  20. Angled stripe superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, L.; Morrison, C.B.; Zinkiewicz, L.M.; Niesen, J.W.

    1989-08-08

    This patent describes a superluminescent light-emitting diode device having high power output and high spectral bandwidth. The device comprising: a semiconductor structure including at least one channel region formed in a semiconductor substrate and filled with a first semiconductor cladding layer of material having a higher index of refraction than substrate material outside the channel region, to provide lateral index-guiding of light within the channel region. The semiconductor structure also including a second semiconductor cladding layer of opposite conductivity type to the first, an active semiconductor layer at a junction between the first and second semiconductor cladding layers, and at least one emitting facet formed at a channel end; means for applying an electrical forward-bias voltage across the junction to produce emission of light; and wherein the channel is slightly inclined to a direction normal to the facet, to suppress lasing within the device, which can then operated at high powers and a broad spectral width.

  1. Advanced Gasification Mercury/Trace Metal Control with Monolith Traps

    Energy Technology Data Exchange (ETDEWEB)

    Musich, Mark; Swanson, Michael; Dunham, Grant; Stanislowski, Joshua

    2010-10-05

    Two Corning monoliths and a non-carbon-based material have been identified as potential additives for mercury capture in syngas at temperatures above 400°F and pressure of 600 psig. A new Corning monolith formulation, GR-F1-2189, described as an active sample appeared to be the best monolith tested to date. The Corning SR Liquid monolith concept continues to be a strong candidate for mercury capture. Both monolith types allowed mercury reduction to below 5-μg/m{sup 3} (~5 ppb), a current U.S. Department of Energy (DOE) goal for trace metal control. Preparation methods for formulating the SR Liquid monolith impacted the ability of the monolith to capture mercury. The Energy & Environmental Research Center (EERC)-prepared Noncarbon Sorbents 1 and 2 appeared to offer potential for sustained and significant reduction of mercury concentration in the simulated fuel gas. The Noncarbon Sorbent 1 allowed sustained mercury reduction to below 5-μg/m{sup 3} (~5 ppb). The non-carbon-based sorbent appeared to offer the potential for regeneration, that is, desorption of mercury by temperature swing (using nitrogen and steam at temperatures above where adsorption takes place). A Corning cordierite monolith treated with a Group IB metal offered limited potential as a mercury sorbent. However, a Corning carbon-based monolith containing prereduced metallic species similar to those found on the noncarbon sorbents did not exhibit significant or sustained mercury reduction. EERC sorbents prepared with Group IB and IIB selenide appeared to have some promise for mercury capture. Unfortunately, these sorbents also released Se, as was evidenced by the measurement of H2Se in the effluent gas. All sorbents tested with arsine or hydrogen selenide, including Corning monoliths and the Group IB and IIB metal-based materials, showed an ability to capture arsine or hydrogen selenide at 400°F and 600 psig. Based on current testing, the noncarbon metal-based sorbents appear to be the most

  2. ADVANCED GASIFICATION MERCURY/TRACE METAL CONTROL WITH MONOLITH TRAPS

    Energy Technology Data Exchange (ETDEWEB)

    Mark A. Musich; Michael L. Swanson; Grant E. Dunham; Joshua J. Stanislowski

    2010-07-31

    Two Corning monoliths and a non-carbon-based material have been identified as potential additives for mercury capture in syngas at temperatures above 400°F and pressure of 600 psig. A new Corning monolith formulation, GR-F1-2189, described as an active sample appeared to be the best monolith tested to date. The Corning SR Liquid monolith concept continues to be a strong candidate for mercury capture. Both monolith types allowed mercury reduction to below 5-μg/m3 (~5 ppb), a current U.S. Department of Energy (DOE) goal for trace metal control. Preparation methods for formulating the SR Liquid monolith impacted the ability of the monolith to capture mercury. The Energy & Environmental Research Center (EERC)-prepared Noncarbon Sorbents 1 and 2 appeared to offer potential for sustained and significant reduction of mercury concentration in the simulated fuel gas. The Noncarbon Sorbent 1 allowed sustained mercury reduction to below 5-μg/m3 (~5 ppb). The non-carbon-based sorbent appeared to offer the potential for regeneration, that is, desorption of mercury by temperature swing (using nitrogen and steam at temperatures above where adsorption takes place). A Corning cordierite monolith treated with a Group IB metal offered limited potential as a mercury sorbent. However, a Corning carbon-based monolith containing prereduced metallic species similar to those found on the noncarbon sorbents did not exhibit significant or sustained mercury reduction. EERC sorbents prepared with Group IB and IIB selenide appeared to have some promise for mercury capture. Unfortunately, these sorbents also released Se, as was evidenced by the measurement of H2Se in the effluent gas. All sorbents tested with arsine or hydrogen selenide, including Corning monoliths and the Group IB and IIB metal-based materials, showed an ability to capture arsine or hydrogen selenide at 400°F and 600 psig. Based on current testing, the noncarbon metal-based sorbents appear to be the most effective arsine

  3. A Division in PIN-Mediated Auxin Patterning during Organ Initiation in Grasses

    Science.gov (United States)

    O'Connor, Devin L.; Runions, Adam; Sluis, Aaron; Bragg, Jennifer; Vogel, John P.

    2014-01-01

    The hormone auxin plays a crucial role in plant morphogenesis. In the shoot apical meristem, the PIN-FORMED1 (PIN1) efflux carrier concentrates auxin into local maxima in the epidermis, which position incipient leaf or floral primordia. From these maxima, PIN1 transports auxin into internal tissues along emergent paths that pattern leaf and stem vasculature. In Arabidopsis thaliana, these functions are attributed to a single PIN1 protein. Using phylogenetic and gene synteny analysis we identified an angiosperm PIN clade sister to PIN1, here termed Sister-of-PIN1 (SoPIN1), which is present in all sampled angiosperms except for Brassicaceae, including Arabidopsis. Additionally, we identified a conserved duplication of PIN1 in the grasses: PIN1a and PIN1b. In Brachypodium distachyon, SoPIN1 is highly expressed in the epidermis and is consistently polarized toward regions of high expression of the DR5 auxin-signaling reporter, which suggests that SoPIN1 functions in the localization of new primordia. In contrast, PIN1a and PIN1b are highly expressed in internal tissues, suggesting a role in vascular patterning. PIN1b is expressed in broad regions spanning the space between new primordia and previously formed vasculature, suggesting a role in connecting new organs to auxin sinks in the older tissues. Within these regions, PIN1a forms narrow canals that likely pattern future veins. Using a computer model, we reproduced the observed spatio-temporal expression and localization patterns of these proteins by assuming that SoPIN1 is polarized up the auxin gradient, and PIN1a and PIN1b are polarized to different degrees with the auxin flux. Our results suggest that examination and modeling of PIN dynamics in plants outside of Brassicaceae will offer insights into auxin-driven patterning obscured by the loss of the SoPIN1 clade in Brassicaceae. PMID:24499933

  4. A PWR Thorium Pin Cell Burnup Benchmark

    Energy Technology Data Exchange (ETDEWEB)

    Weaver, Kevan Dean; Zhao, X.; Pilat, E. E; Hejzlar, P.

    2000-05-01

    As part of work to evaluate the potential benefits of using thorium in LWR fuel, a thorium fueled benchmark comparison was made in this study between state-of-the-art codes, MOCUP (MCNP4B + ORIGEN2), and CASMO-4 for burnup calculations. The MOCUP runs were done individually at MIT and INEEL, using the same model but with some differences in techniques and cross section libraries. Eigenvalue and isotope concentrations were compared on a PWR pin cell model up to high burnup. The eigenvalue comparison as a function of burnup is good: the maximum difference is within 2% and the average absolute difference less than 1%. The isotope concentration comparisons are better than a set of MOX fuel benchmarks and comparable to a set of uranium fuel benchmarks reported in the literature. The actinide and fission product data sources used in the MOCUP burnup calculations for a typical thorium fuel are documented. Reasons for code vs code differences are analyzed and discussed.

  5. Multi-pin chemiresistors for microchemical sensors

    Science.gov (United States)

    Ho, Clifford K.

    2007-02-20

    A multi-pin chemiresistor for use in microchemical sensors. A pair of free-standing, bare wires is supported by an electrically insulating support, and are oriented parallel to each other and spaced closely together. A free-standing film of a chemically sensitive polymer that swells when exposed to vapors of a volatile chemical is formed in-between the pair of closely-spaced wires by capillary action. Similar in construction to a thermocouple, this "chemicouple" is relatively inexpensive and easy to fabricate by dipping the pair of bare wires into a bath of well-mixed chemiresistor ink. Also, a chemiresistor "stick" is formed by dipping an electrically insulating rod with two or more linear or spiral-wrapped electrical traces into the bath of well-mixed chemiresistor ink, which deposits a uniform coating of the chemically sensitive polymer on the rod and the electrical traces. These "sticks" can be easily removed and replaced from a multi-chemiresistor plug.

  6. Thermal experiment of silicon PIN detector

    Institute of Scientific and Technical Information of China (English)

    CHEN Hong-Fei; ZOU Ji-Qing; SHI Wei-Hong; ZOU Hong; HU Ran-Sheng; TIAN Da-Yu

    2008-01-01

    The experiment of this paper is the thermal test of the leakage current of silicon PIN detector.Raising temperature may cause the detector to increase leakage current,decrease depletion and increase noise.Three samples are used in the experiment.One (called △E) is the sample of 100 tan in thickness.The other two (called E1 and E2) are stacks of five detectors of 1000 μm in thickness.All of them are 12 mm in diameter.The experiment has been done for 21 hours and with power on continuously.The samples have undergone more than 60 ℃ for about one hour.They are not degenerated when back to the room temperature.The depletion rate is temperature and bias voltage related.With the circuit of the experiment and temperature at 35 ℃,△E is still depleted while E1 and E2 are 94.9% and 99.7% depleted respectively.The noises of the samples can be derived from the values at room temperature and the thermal dependence of the leakage currents.With the addition of the noise of the pre-amplifier,the noises of E1,E2 and AE at 24 ℃ are 16.4,16.3,and 10.5 keV (FWHM) respectively while at 35 ℃ are about 33.6,33.1,and 20.6 keV (FWHM) respectively.

  7. Superconducting vortex pinning with artificial magnetic nanostructures.

    Energy Technology Data Exchange (ETDEWEB)

    Velez, M.; Martin, J. I.; Villegas, J. E.; Hoffmann, A.; Gonzalez, E. M.; Vicent, J. L.; Schuller, I. K.; Univ. de Oviedo-CINN; Unite Mixte de Physique CNRS/Thales; Univ. Paris-Sud; Univ.Complutense de Madrid; Univ. California at San Diego

    2008-11-01

    This review is dedicated to summarizing the recent research on vortex dynamics and pinning effects in superconducting films with artificial magnetic structures. The fabrication of hybrid superconducting/magnetic systems is presented together with the wide variety of properties that arise from the interaction between the superconducting vortex lattice and the artificial magnetic nanostructures. Specifically, we review the role that the most important parameters in the vortex dynamics of films with regular array of dots play. In particular, we discuss the phenomena that appear when the symmetry of a regular dot array is distorted from regularity towards complete disorder including rectangular, asymmetric, and aperiodic arrays. The interesting phenomena that appear include vortex-lattice reconfigurations, anisotropic dynamics, channeling, and guided motion as well as ratchet effects. The different regimes are summarized in a phase diagram indicating the transitions that take place as the characteristic distances of the array are modified respect to the superconducting coherence length. Future directions are sketched out indicating the vast open area of research in this field.

  8. Ideal glass transitions by random pinning

    Science.gov (United States)

    Cammarota, Chiara; Biroli, Giulio

    2012-01-01

    We study the effect of freezing the positions of a fraction c of particles from an equilibrium configuration of a supercooled liquid at a temperature T. We show that within the random first-order transition theory pinning particles leads to an ideal glass transition for a critical fraction c = cK(T) even for moderate supercooling; e.g., close to the Mode-Coupling transition temperature. First we derive the phase diagram in the T - c plane by mean field approximations. Then, by applying a real-space renormalization group method, we obtain the critical properties for |c - cK(T)| → 0, in particular the divergence of length and time scales, which are dominated by two zero-temperature fixed points. We also show that for c = cK(T) the typical distance between frozen particles is related to the static point-to-set length scale of the unconstrained liquid. We discuss what are the main differences when particles are frozen in other geometries and not from an equilibrium configuration. Finally, we explain why the glass transition induced by freezing particles provides a new and very promising avenue of research to probe the glassy state and ascertain, or disprove, the validity of the theories of the glass transition. PMID:22623524

  9. New Graphene Form of Nanoporous Monolith for Excellent Energy Storage.

    Science.gov (United States)

    Bi, Hui; Lin, Tianquan; Xu, Feng; Tang, Yufeng; Liu, Zhanqiang; Huang, Fuqiang

    2016-01-13

    Extraordinary tubular graphene cellular material of a tetrahedrally connected covalent structure was very recently discovered as a new supermaterial with ultralight, ultrastiff, superelastic, and excellent conductive characteristics, but no high specific surface area will keep it from any next-generation energy storage applications. Herein, we prepare another new graphene monolith of mesoporous graphene-filled tubes instead of hollow tubes in the reported cellular structure. This graphene nanoporous monolith is also composed of covalently bonded carbon network possessing high specific surface area of ∼1590 m(2) g(-1) and electrical conductivity of ∼32 S cm(-1), superior to graphene aerogels and porous graphene forms self-assembled by graphene oxide. This 3D graphene monolith can support over 10 000 times its own weight, significantly superior to CNT and graphene cellular materials with a similar density. Furthermore, pseudocapacitance-active functional groups are introduced into the new nanoporous graphene monolith as an electrode material in electrochemical capacitors. Surprisingly, the electrode of 3D mesoporous graphene has a specific capacitance of 303 F g(-1) and maintains over 98% retention after 10 000 cycles, belonging to the list for the best carbon-based active materials. The macroscopic mesoporous graphene monolith suggests the great potential as an electrode for supercapacitors in energy storage areas.

  10. Recent advances in polymer monoliths for ion-exchange chromatography.

    Science.gov (United States)

    Nordborg, Anna; Hilder, Emily F

    2009-05-01

    The use of polymeric materials in ion-exchange chromatography applications is advantageous because of their typically high mechanical stability and tolerance of a wide range of pH conditions. The possibility of using polymeric monoliths in ion-exchange chromatography is therefore obvious and many of the same strategies developed for polymeric particles have been adapted for use with polymeric monoliths. In this review different strategies for the synthesis of polymeric monoliths with ion-exchange functionality are discussed. The incorporation of ion-exchange functionality by co-polymerization is included, as also are different post-polymerization alterations to the monolith surface such as grafting. The formulations and strategies presented include materials intended for use in analytical separations in ion-exchange chromatography, sample pre-treatment or enrichment applications, and materials for capillary electrochromatography. Finally, examples of the use of polymeric monoliths in ion-exchange chromatography applications are included with examples published in the years 2003 to 2008.

  11. HPLC analysis of synthetic polymers on short monolithic columns.

    Science.gov (United States)

    Maksimova, Elena; Vlakh, Evgenia; Sinitsyna, Ekaterina; Tennikova, Tatiana

    2013-12-01

    Ultrashort monolithic columns (disks) were thoroughly studied as efficient stationary phases for precipitation-dissolution chromatography of synthetic polymers. Gradient elution mode was applied in all chromatographic runs. The mixtures of different flexible chain homopolymers, such as polystyrenes, poly(methyl methacrylates), and poly(tert-butylmethacrylates) were separated according to their molecular weights on both commercial poly(styrene-co-divinylbenzene) disks (12 id × 3 mm and 5 × 5 mm) and lab-made monolithic columns (4.6 id × 50 mm) filled with supports of different hydrophobicity. The experimental conditions were optimized to reach fast and highly efficient separation. It was observed that, similar to the separation of monoliths of other classes of (macro)molecules (proteins, DNA, oligonucleotides), the length of column did not affect the peak resolution. A comparison of the retention properties of the poly(styrene-co-divinylbenzene) disk-shaped monoliths with those based on poly(lauryl methacrylate-co-ethylene dimethacrylate), poly(butyl methacrylate-co-ethylene dimethacrylate), and poly(glycidyl methacrylate-co-ethylene dimethacrylate) supports demonstrated the obvious effect of surface chemistry on the resolution factor. Additionally, the results of the discussed chromatographic mode on the fast determination of the molecular weights of homopolymers used in this study were compared to those established by SEC on columns packed with sorbent beads of a similar nature to the monoliths. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Edge chipping and flexural resistance of monolithic ceramics☆

    Science.gov (United States)

    Zhang, Yu; Lee, James J.-W.; Srikanth, Ramanathan; Lawn, Brian R.

    2014-01-01

    Objective Test the hypothesis that monolithic ceramics can be developed with combined esthetics and superior fracture resistance to circumvent processing and performance drawbacks of traditional all-ceramic crowns and fixed-dental-prostheses consisting of a hard and strong core with an esthetic porcelain veneer. Specifically, to demonstrate that monolithic prostheses can be produced with a much reduced susceptibility to fracture. Methods Protocols were applied for quantifying resistance to chipping as well as resistance to flexural failure in two classes of dental ceramic, microstructurally-modified zirconias and lithium disilicate glass–ceramics. A sharp indenter was used to induce chips near the edges of flat-layer specimens, and the results compared with predictions from a critical load equation. The critical loads required to produce cementation surface failure in monolithic specimens bonded to dentin were computed from established flexural strength relations and the predictions validated with experimental data. Results Monolithic zirconias have superior chipping and flexural fracture resistance relative to their veneered counterparts. While they have superior esthetics, glass–ceramics exhibit lower strength but higher chip fracture resistance relative to porcelain-veneered zirconias. Significance The study suggests a promising future for new and improved monolithic ceramic restorations, with combined durability and acceptable esthetics. PMID:24139756

  13. Numerical Evaluation of Flow and Heat Transfer in Plate-Pin Fin Heat Sinks with Various Pin Cross-Sections

    OpenAIRE

    Zhou, Feng; Catton, Ivan

    2011-01-01

    A numerical investigation of the thermal and hydraulic performance of twenty different plate-pin fin heat sinks with various shapes of pin cross-section (square, circular, elliptic, NACA profile and dropform) and different ratios of pin widths to plate fin spacing (0.3, 0.4, 0.5 and 0.6) was performed. Finite Volume Method based CFD software, Ansys CFX, was used as the 3-D Reynolds-averaged Navier-Stokes Solver. A k-ω based Shear-Stress-Transport model was used to predict the turbulent flow a...

  14. Monolithic View of Galaxy Formation and Evolution

    Directory of Open Access Journals (Sweden)

    Cesare Chiosi

    2014-07-01

    Full Text Available We review and critically discuss the current understanding of galaxy formation and evolution limited to Early Type Galaxies (ETGs as inferred from the observational data and briefly contrast the hierarchical and quasi-monolithic paradigms of formation and evolution. Since in Cold Dark Matter (CDM cosmogony small scale structures typically collapse early and form low-mass haloes that subsequently can merge to assembly larger haloes, galaxies formed in the gravitational potential well of a halo are also expected to merge thus assembling their mass hierarchically. Mergers should occur all over the Hubble time and large mass galaxies should be in place only recently. However, recent observations of high redshift galaxies tell a different story: massive ETGs are already in place at high redshift. To this aim, we propose here a revision of the quasi-monolithic scenario as an alternative to the hierarchical one, in which mass assembling should occur in early stages of a galaxy lifetime and present recent models of ETGs made of Dark and Baryonic Matter in a Λ-CDM Universe that obey the latter scheme. The galaxies are followed from the detachment from the linear regime and Hubble flow at z ≥ 20 down to the stage of nearly complete assembly of the stellar content (z ∼ 2 − 1 and beyond.  It is found that the total mass (Mh = MDM + MBM and/or initial over-density of the proto-galaxy drive the subsequent star formation histories (SFH. Massive galaxies (Mh ~ _1012M⊙ experience a single, intense burst of star formation (with rates ≥ 103M⊙/yr at early epochs, consistently with observations, with a weak dependence on the initial over-density; intermediate mass haloes (Mh~_ 1010 − 1011M⊙ have star formation histories that strongly depend on their initial over-density; finally, low mass haloes (Mh ~_ 109M⊙ always have erratic, burst-like star forming histories. The present-day properties (morphology, structure, chemistry and photometry of the

  15. Procedure of recovery of pin-by-pin fields of energy release in the core of VVER-type reactor for the BIPR-8 code

    Science.gov (United States)

    Gordienko, P. V.; Kotsarev, A. V.; Lizorkin, M. P.

    2014-12-01

    The procedure of recovery of pin-by-pin energy-release fields for the BIPR-8 code and the algorithm of the BIPR-8 code which is used in nodal computation of the reactor core and on which the recovery of pin-by-pin fields of energy release is based are briefly described. The description and results of the verification using the module of recovery of pin-by-pin energy-release fields and the TVS-M program are given.

  16. Pins, dowels, and other retentive devices in posterior teeth.

    Science.gov (United States)

    Jacobi, R; Shillingburg, H T

    1993-07-01

    Devices used to increase retention of restorations to severely damaged posterior teeth are described, with an emphasis on pins and dowels. Advantages and disadvantages of different techniques and measures to help prevent and correct problems are presented.

  17. Characterization of vortex pinning through the Campbell length

    Science.gov (United States)

    Willa, Roland; Geshkenbein, Vadim B.; Blatter, Gianni

    Vortex pinning is decisive in establishing dissipation-free current flow in a type-II superconductor; knowledge and optimization of the pinning landscape (pinscape) is of major importance for applications. The ac magnetic response, characterized by the Campbell penetration depth λC, provides valuable information on the pinscape, besides the critical current density jc. While microscopic derivations of jc are available both in the weak and strong pinning limits, this is not the case for the Campbell length, whose understanding has remained on a phenomenological level so far. Based on the microscopic theory of strong pinning, we have established a proper link between the Campbell length and the pinscape parameters. This new quantitative formalism captures all experimentally observed signatures, among which are the dependence of λC on the vortex state preparation and the hysteresis in λC upon thermal cycling the field-cooled state.

  18. PIN1 in breast development and cancer: a clinical perspective.

    Science.gov (United States)

    Rustighi, Alessandra; Zannini, Alessandro; Campaner, Elena; Ciani, Yari; Piazza, Silvano; Del Sal, Giannino

    2017-02-01

    Mammary gland development, various stages of mammary tumorigenesis and breast cancer progression have the peptidyl-prolyl cis/trans isomerase PIN1 at their centerpiece, in virtue of the ability of this unique enzyme to fine-tune the dynamic crosstalk between multiple molecular pathways. PIN1 exerts its action by inducing conformational and functional changes on key cellular proteins, following proline-directed phosphorylation. Through this post-phosphorylation signal transduction mechanism, PIN1 controls the extent and direction of the cellular response to a variety of inputs, in physiology and disease. This review discusses PIN1's roles in normal mammary development and cancerous progression, as well as the clinical impact of targeting this enzyme in breast cancer patients.

  19. 8 Pin RIC Socket for Hearing Aid Applications

    DEFF Research Database (Denmark)

    Islam, Aminul; Hansen, Hans Nørgaard; Davids, Søren;

    2012-01-01

    process and the other one is fully automated process. This paper presents the entire process chain for both the concepts and makes a comparative analysis based on the experimental investigation and validation. The work presented here can be a source of valuable information for industrial users......The current paper presents the development of an 8 Pin RIC (Receiver in the canal) Socket for hearing instruments within the framework of the COTECH project. There are 8 industrial demonstrators developed in COTECH based on the converged product and process design. Sonion’s 8 Pin RIC Socket is one...... of them. 8 Pin RIC Socket is a functionally versatile product which can combine many different functions and presents many advantages compared with the previous 3 Pin RIC Socket. For the demonstrator production of the new Socket, two different production concepts were chosen- one based on semi-automated...

  20. Pinning impulsive directed coupled delayed dynamical network and its applications

    Science.gov (United States)

    Lin, Chunnan; Wu, Quanjun; Xiang, Lan; Zhou, Jin

    2015-01-01

    The main objective of the present paper is to further investigate pinning synchronisation of a complex delayed dynamical network with directionally coupling by a single impulsive controller. By developing the analysis procedure of pinning impulsive stability for undirected coupled dynamical network previously, some simple yet general criteria of pinning impulsive synchronisation for such directed coupled network are derived analytically. It is shown that a single impulsive controller can always pin a given directed coupled network to a desired homogenous solution, including an equilibrium point, a periodic orbit, or a chaotic orbit. Subsequently, the theoretical results are illustrated by a directed small-world complex network which is a cellular neural network (CNN) and a directed scale-free complex network with the well-known Hodgkin-Huxley neuron oscillators. Numerical simulations are finally given to demonstrate the effectiveness of the proposed control methodology.

  1. Monolithic Solid Oxide Fuel Cell development

    Science.gov (United States)

    Myles, K. M.; McPheeters, C. C.

    1989-12-01

    The Monolithic Solid Oxide Fuel Cell (MSOFC) is an oxide-ceramic structure in which appropriate electronic and ionic conductors are fabricated in a honeycomb shape similar to a block of corrugated paperboard. These electronic and ionic conductors are arranged to provide short conduction paths to minimize resistive losses. The power density achievable with the MSOFC is expected to be about 8 kW/kg or 4 kW/L, at fuel efficienceis over 50 percent, because of small cell size and low resistive losses in the materials. The MSOFC operates in the range of 700 to 1000 C, at which temperatures rapid reform of hydrocarbon fuels is expected within the nickel-YSZ fuel channels. Tape casting and hot roll calendering are used to fabricate the MSOFC structure. The performance of the MSOFC has improved significantly during the course of development. The limitation of this system, based on materials resistance alone without interfacial resistances, is 0.093 ohm-sq cm area-specific resistance (ASR). The current typical performance of MSOFC single cells is characterized by ASRs of about 0.4 to 0.5 ohm-sq cm. With further development the ASR is expected to be reduced below 0.2 ohm-sq cm, which will result in power levels greater than 1.4 W/sq cm. The feasibility of the MSOFC concept was proven, and the performance was dramatically improved. The differences in thermal expansion coefficients and firing shrinkages among the fuel cell materials were minimized. As a result of good matching of these properties, the MSOFC structure was successfully fabricated with few defects, and the system shows excellent promise for development into a practical power source.

  2. [Py-Desmanet pinning in distal radius fractures].

    Science.gov (United States)

    Alexa, O; Popia, I

    2009-01-01

    Internal fixation by pinning is one of the most used methods of surgical treatment in fractures of the distal extremity of the radius. As in stable fractures a styloid pinning is satisfactory, in unstable fractures however we must resort to different patterns of pin insertion, in order to effectively prevent the secondary displacement of the fractured fragments. The elastic pinning described by Py and Desmanet is one of the possibilities of inserting the pins. The principle of this method is to use the bending-induced tension in the pins to counteract the postero-lateral displacing forces. The authors have treated by this technique five patients with distal radius fractures (3 women and 2 men) about 56 years of average age, all with good-quality bone, all with Colles' fracture pattern (2-4 cm above the radio-carpal articulation, no articular involvement, posterior displacement of the distal fragment). The reduction of the fractures was achieved by closed manipulation and controlled intraoperatively with the C-arm. We preferred to reduce the fractures before inserting the pins, although this is not compulsory, according to the authors of the technique. The approach was minimally-invasive, through two 1-cm long incisions. The pins, previously blunted and curved along the last centimeters, were introduced using a "T"-shaped handle. The potential complications, consisting of injuries of the many elements which cross the region, were avoided by sufficiently long incisions and identification and retraction of these elements (tendons, nervous branches) in order not to penetrate them with the pins. The aftertreatment consisted of immediate mobilization of the wrist in one patient, 21-day splinting in other two and 30-day splinting in the last two, depending on the intraoperative assessment of the stability of the fixation. The pins were removed at 45 days postoperatively in all cases. There were no complications such as loss of reduction or pin migration. In all cases

  3. An experimental study of a pin-fin heat exchanger

    OpenAIRE

    Ramthun, David L.

    2003-01-01

    Approved for public release; distribution is unlimited A detailed experimental study has been carried out on the heat transfer and pressure drop characteristics of a compact heat exchanger with pin fins. A modular wind-tunnel with a rectangular cross-section duct-flow area was constructed that would accommodate the heat exchanger test section with varying pin designs. The flow in the tunnel was achieved through a suction-type blower, and a leading entrance length section was added to achie...

  4. Anisotropic flux pinning in high T{sub c} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kolesnik, S. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warszawa (Poland); Igalson, J. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warszawa (Poland); Skoskiewicz, T. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warszawa (Poland); Szymczak, R. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warszawa (Poland); Baran, M. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668, Warszawa (Poland); Pytel, K. [Institute of Atomic Energy, Swierk (Poland); Pytel, B. [Institute of Atomic Energy, Swierk (Poland)

    1995-02-09

    In this paper we present a comparison of the results of FC magnetization measurements on several Pb-Sr-(Y,Ca)-Cu-O crystals representing various levels of flux pinning. The pinning centers in our crystals have been set up during the crystal growth process or introduced by neutron irradiation. Some possible explanations of the observed effects, including surface barrier, flux-center distribution and sample-shape effects, are discussed. ((orig.)).

  5. Investigating the interactions of yeast prions: [SWI+], [PSI+], and [PIN+].

    Science.gov (United States)

    Du, Zhiqiang; Li, Liming

    2014-06-01

    Multiple prion elements, which are transmitted as heritable protein conformations and often linked to distinct phenotypes, have been identified in the budding yeast, Saccharomyces cerevisiae. It has been shown that overproduction of a prion protein Swi1 can promote the de novo conversion of another yeast prion [PSI(+)] when Sup35 is co-overproduced. However, the mechanism underlying this Pin(+) ([PSI(+)] inducible) activity is not clear. Moreover, how the Swi1 prion ([SWI(+)]) interacts with other yeast prions is unknown. Here, we demonstrate that the Pin(+) activity associated with Swi1 overproduction is independent of Rnq1 expression or [PIN(+)] conversion. We also show that [SWI(+)] enhances the appearance of [PSI(+)] and [PIN(+)]. However, [SWI(+)] significantly compromises the Pin(+) activity of [PIN(+)] when they coexist. We further demonstrate that a single yeast cell can harbor three prions, [PSI(+)], [PIN(+)], and [SWI(+)], simultaneously. However, under this condition, [SWI(+)] is significantly destabilized. While the propensity to aggregate underlies prionogenesis, Swi1 and Rnq1 aggregates resulting from overproduction are usually nonheritable. Conversely, prion protein aggregates formed in nonoverexpressing conditions or induced by preexisting prion(s) are more prionogenic. For [PSI(+)] and [PIN(+)] de novo formation, heterologous "facilitators," such as preexisting [SWI(+)] aggregates, colocalize only with the newly formed ring-/rod-shaped Sup35 or Rnq1 aggregates, but not with the dot-shaped mature prion aggregates. Their colocalization frequency is coordinated with their prion inducibility, indicating that prion-prion interactions mainly occur at the early initiation stage. Our results provide supportive evidence for the cross-seeding model of prionogenesis and highlight a complex interaction network among prions in yeast.

  6. Open safety pin ingestion presenting as incarcerated umbilical hernia.

    Science.gov (United States)

    Mirza, Bilal; Sheikh, Afzal

    2011-09-01

    Foreign body ingestion is common in children. Sharp foreign bodies are potentially harmful and can result various complications. An 8-month-old infant presented with incarcerated umbilical hernia. With a suspicion of strangulation, operation was performed that revealed a loop of ileum being stuck in the umbilical defect. The loop of ileum was freed from the umbilicus which demonstrated open ends of safety pin piercing out of bowel lumen. The enterotomy followed by removal of safety pin was performed.

  7. Open Safety Pin Ingestion Presenting as Incarcerated Umbilical Hernia

    OpenAIRE

    Bilal Mirza; Afzal Sheikh

    2011-01-01

    Foreign body ingestion is common in children. Sharp foreign bodies are potentially harmful and can result various complications. An 8-month-old infant presented with incarcerated umbilical hernia. With a suspicion of strangulation, operation was performed that revealed a loop of ileum being stuck in the umbilical defect. The loop of ileum was freed from the umbilicus which demonstrated open ends of safety pin piercing out of bowel lumen. The enterotomy followed by removal of safety pin was p...

  8. Open Safety Pin Ingestion Presenting as Incarcerated Umbilical Hernia

    Directory of Open Access Journals (Sweden)

    Bilal Mirza

    2011-11-01

    Full Text Available Foreign body ingestion is common in children. Sharp foreign bodies are potentially harmful and can result various complications. An 8-month-old infant presented with incarcerated umbilical hernia. With a suspicion of strangulation, operation was performed that revealed a loop of ileum being stuck in the umbilical defect. The loop of ileum was freed from the umbilicus which demonstrated open ends of safety pin piercing out of bowel lumen. The enterotomy followed by removal of safety pin was performed.

  9. AtPIN: Arabidopsis thaliana Protein Interaction Network

    Directory of Open Access Journals (Sweden)

    Silva-Filho Marcio C

    2009-12-01

    Full Text Available Abstract Background Protein-protein interactions (PPIs constitute one of the most crucial conditions to sustain life in living organisms. To study PPI in Arabidopsis thaliana we have developed AtPIN, a database and web interface for searching and building interaction networks based on publicly available protein-protein interaction datasets. Description All interactions were divided into experimentally demonstrated or predicted. The PPIs in the AtPIN database present a cellular compartment classification (C3 which divides the PPI into 4 classes according to its interaction evidence and subcellular localization. It has been shown in the literature that a pair of genuine interacting proteins are generally expected to have a common cellular role and proteins that have common interaction partners have a high chance of sharing a common function. In AtPIN, due to its integrative profile, the reliability index for a reported PPI can be postulated in terms of the proportion of interaction partners that two proteins have in common. For this, we implement the Functional Similarity Weight (FSW calculation for all first level interactions present in AtPIN database. In order to identify target proteins of cytosolic glutamyl-tRNA synthetase (Cyt-gluRS (AT5G26710 we combined two approaches, AtPIN search and yeast two-hybrid screening. Interestingly, the proteins glutamine synthetase (AT5G35630, a disease resistance protein (AT3G50950 and a zinc finger protein (AT5G24930, which has been predicted as target proteins for Cyt-gluRS by AtPIN, were also detected in the experimental screening. Conclusions AtPIN is a friendly and easy-to-use tool that aggregates information on Arabidopsis thaliana PPIs, ontology, and sub-cellular localization, and might be a useful and reliable strategy to map protein-protein interactions in Arabidopsis. AtPIN can be accessed at http://bioinfo.esalq.usp.br/atpin.

  10. Integration of mode-locked diode lasers

    Science.gov (United States)

    Coleman, A. Catrina; Hou, Lianping; Marsh, John H.

    2016-03-01

    Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with advantages over more conventional sources in compactness, robustness, performance stability, power consumption, and cost savings. The use of quantum well intermixing (QWI) to integrate passive sections and surface etched distributed Bragg reflectors (DBR) into monolithic laser cavity will be described. The performance of the devices will be presented.

  11. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  12. Design of Monolithic Integrator for Strain-to-Frequency Converter

    Directory of Open Access Journals (Sweden)

    Tuan Mohd. Khairi Tuan Mat

    2012-01-01

    Full Text Available Strain-to-Frequency converter (SFC is a one of the analog conditioner tools that converts any strain signal to the frequency signal. The basic concept of SFC is by detecting any changing of strains, then converting the strain to the voltage signal and converting the voltage signal to the frequency signal. This tool consists of 3 main  components which are strain gauge, differential integrator and comparator. This paper presents the designing and analysis of monolithic integrator that to be used in the Strain-toFrequency converter. The primary goal is to design and simulate the performance of monolithic integrator for SFC using GATEWAY Silvaco Electronic Design Automation (S EDA tools and EXPERT software. The performances of SFC using the designed monolithic integrator are also investigated.

  13. Molecularly imprinted macroporous monolithic materials for protein recognition

    Institute of Scientific and Technical Information of China (English)

    Qi Liang Deng; Yan Li Li; Li Hua Zhang; Yu Kui Zhang

    2011-01-01

    Synthetic materials that can specifically recognize proteins will find wide application in many fields. In this report, bovine serum albumin was chosen as the template protein. Acrylamide and N, N'-methylenebisacrylamide were employed as the functional and cross-linker monomers, respectively. Molecularly imprinted macroporous monolithic materials that can preferentially bind the template protein in an aqueous environment were prepared by combination of molecular imprinting technique and freezing/thawing preparation method. The resulted imprinted macroporous monolithic columns were evaluated by utilizing as stationary phase in high performance liquid chromatography and solid-phase extraction materials. The experimental results indicated that the imprinted macroporous monolithic column exhibited good recognition for template protein, as compared with the control protein (hemoglobin), whereas the non-imprinted polymer (prepared under the same conditions except without addition template protein) had no selective properties.

  14. A Possible Astronomically Aligned Monolith at Gardom's Edge

    Science.gov (United States)

    Brown, Daniel; Alder, Andy; Bemand, Elizabeth

    2015-05-01

    A unique triangular shaped monolith located within the Peak District National Park at Gardom's Edge could be intentionally astronomically aligned. It is set within a landscape rich in late Neolithic and Bronze Age remains. We show that the stone is most likely in its original orientation owing to its clear signs of erosion and associated to the time period of the late Neolithic. It is tilted towards south and its north side slopes at an angle equal to the maximum altitude of the Sun at mid-summer. This alignment emphasizes the changing declinations of the Sun during the seasons as well as giving an indication of mid-summers day. This functionality is achieved by an impressive display of light and shadow on the north facing side of the monolith. Together with other monuments in the close vicinity the monolith would have represented an ideal marker or social arena for seasonal gatherings for the otherwise dispersed small communities.

  15. Preliminary shielding analysis for the CSNS target station monolith

    Institute of Scientific and Technical Information of China (English)

    张斌; 陈义学; 杨寿海; 吴军; 殷雯; 梁天骄; 贾学军

    2010-01-01

    The construction of the China Spallation Neutron Source (CSNS) has been initiated at Dongguan,Guangdong,China.In spallation neutron sources the target station monolith is contaminated by a large number of fast neutrons whose energies can be as large as those of the protons of the proton beam directed towards the tungsten target.A detailed radiation transport analysis of the target station monolith is important for the construction of the CSNS.The analysis is performed using the coupled Monte Carlo and multi-dimensional discrete ordinates method.Successful elimination of the primary ray effects via the two-dimensional uncollided flux and first collision source methodology is also illustrated.The dose at the edge of the monolith is calculated.The results demonstrate that the doses received by the hall staff members are below the required standard limit.

  16. Monolithic fuel cell based power source for burst power generation

    Science.gov (United States)

    Fee, D. C.; Blackburn, P. E.; Busch, D. E.; Dees, D. W.; Dusek, J.; Easler, T. E.; Ellingson, W. A.; Flandermeyer, B. K.; Fousek, R. J.; Heiberger, J. J.

    A unique fuel cell coupled with a low power nuclear reactor presents an attractive approach for SDI burst power requirements. The monolithic fuel cell looks attractive for space applications and represents a quantum jump in fuel cell technology. Such a breakthrough in design is the enabling technology for lightweight, low volume power sources for space based pulse power systems. The monolith is unique among fuel cells in being an all solid state device. The capability for miniaturization, inherent in solid state devices, gives the low volume required for space missions. In addition, the solid oxide fuel cell technology employed in the monolith has high temperature reject heat and can be operated in either closed or open cycles. Both these features are attractive for integration into a burst power system.

  17. A Possible Astronomically Aligned Monolith at Gardom's Edge

    CERN Document Server

    Brown, D; Bemand, E

    2012-01-01

    A unique triangular shaped monolith located within the Peak District National Park at Gardom's Edge could be intentionally astronomically aligned. It is set within a landscape rich in late Neolithic and Bronze Age remains. We show that the stone is most likely in its original orientation owing to its clear signs of erosion and associated to the time period of the late Neolithic. It is tilted towards South and its North side slopes at an angle equal to the maximum altitude of the Sun at mid-summer. This alignment emphasizes the changing declinations of the Sun during the seasons as well as giving an indication of mid-summers day. This functionality is achieved by an impressive display of light and shadow on the North-facing side of the Monolith. Together with other monuments in the close vicinity the monolith would have represented an ideal marker or social arena for seasonal gatherings for the else dispersed small communities.

  18. MONOLITHIC FUEL FABRICATION PROCESS DEVELOPMENT AT THE IDAHO NATIONAL LABORATORY_

    Energy Technology Data Exchange (ETDEWEB)

    G. A. Moore; F. J. Rice; N. E. Woolstenhulme; J-F. Jue; B. H. Park; S. E. Steffler; N. P. Hallinan; M. D. Chapple; M. C. Marshall; B. L. Mackowiak; C. R. Clark; B. H. Rabin

    2009-11-01

    Full-size/prototypic U10Mo monolithic fuel-foils and aluminum clad fuel plates are being developed at the Idaho National Laboratory’s (INL) Materials and Fuels Complex (MFC). These efforts are focused on realizing Low Enriched Uranium (LEU) high density monolithic fuel plates for use in High Performance Research and Test Reactors. The U10Mo fuel foils under development afford a fuel meat density of ~16 gU/cc and thus have the potential to facilitate LEU conversions without any significant reactor-performance penalty. An overview is provided of the ongoing monolithic UMo fuel development effort, including application of a zirconium barrier layer on fuel foils, fabrication scale-up efforts, and development of complex/graded fuel foils. Fuel plate clad bonding processes to be discussed include: Hot Isostatic Pressing (HIP) and Friction Bonding (FB).

  19. A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

    Institute of Scientific and Technical Information of China (English)

    Credence Systems Corporation

    2004-01-01

    @@ (上接第9期51页) Figure 3:3 different pins types which cover a wide range of requirements: - DPIN: The digital mixed signal pin for high speed digital requirements - VPIN digital mixed-signal pin with high voltage digital test capability. With the 30 V swing and 50 MHz data rate the pin fits excellent for automotive requirements.

  20. Dipentamethylene thiuram monosulfide is a novel inhibitor of Pin1

    Energy Technology Data Exchange (ETDEWEB)

    Tatara, Yota; Lin, Yi-Chin; Bamba, Yoshimasa; Mori, Tadashi [Molecular Enzymology, Department of Molecular and Cell Biology, Graduate School of Agricultural Science, Tohoku University, 1-1 Amamiya, Tsutsumidori, Aoba, Sendai, Miyagi 981-8555 (Japan); Uchida, Takafumi, E-mail: uchidat@biochem.tohoku.ac.jp [Molecular Enzymology, Department of Molecular and Cell Biology, Graduate School of Agricultural Science, Tohoku University, 1-1 Amamiya, Tsutsumidori, Aoba, Sendai, Miyagi 981-8555 (Japan)

    2009-07-03

    Pin1 is involved in eukaryotic cell proliferation by changing the structure and function of phosphorylated proteins. PiB, the Pin1 specific inhibitor, blocks cancer cell proliferation. However, low solubility of PiB in DMSO has limited studies of its effectiveness. We screened for additional Pin1 inhibitors and identified the DMSO-soluble compound dipentamethylene thiuram monosulfide (DTM) that inhibits Pin1 activity with an EC50 value of 4.1 {mu}M. Molecular modeling and enzyme kinetic analysis indicated that DTM competitively inhibits Pin1 activity, with a K{sub i} value of 0.05 {mu}M. The K{sub D} value of DTM with Pin1 was determined to be 0.06 {mu}M by SPR technology. Moreover, DTM specifically inhibited peptidyl-prolyl cis/trans isomerase activity in HeLa cells. FACS analysis showed that DTM induced G0 arrest of the HCT116 cells. Our results suggest that DTM has the potential to guide the development of novel antifungal and/or anticancer drugs.

  1. Self-pinning of a nanosuspension droplet: Molecular dynamics simulations

    Science.gov (United States)

    Shi, Baiou; Webb, Edmund B.

    2016-07-01

    Results are presented from molecular dynamics simulations of Pb(l) nanodroplets containing dispersed Cu nanoparticles (NPs) and spreading on solid surfaces. Three-dimensional simulations are employed throughout, but droplet spreading and pinning are reduced to two-dimensional processes by modeling cylindrical NPs in cylindrical droplets; NPs have radius RNP≅3 nm while droplets have initial R0≅42 nm . At low particle loading explored here, NPs in sufficient proximity to the initial solid-droplet interface are drawn into advancing contact lines; entrained NPs eventually bind with the underlying substrate. For relatively low advancing contact angle θadv, self-pinning on entrained NPs occurs; for higher θadv, depinning is observed. Self-pinning and depinning cases are compared and forces on NPs at the contact line are computed during a depinning event. Though significant flow in the droplet occurs in close proximity to the particle during depinning, resultant forces are relatively low. Instead, forces due to liquid atoms confined between the particles and substrate dominate the forces on NPs; that is, for the NP size studied here, forces are interface dominated. For pinning cases, a precursor wetting film advances ahead of the pinned contact line but at a significantly slower rate than for a pure droplet. This is because the precursor film is a bilayer of liquid atoms on the substrate surface but it is instead a monolayer film as it crosses over pinning particles; thus, mass delivery to the bilayer structure is impeded.

  2. Pinned vortex hopping in a neutron star crust

    CERN Document Server

    Haskell, Brynmor

    2015-01-01

    The motion of superfluid vortices in a neutron star crust is at the heart of most theories of pulsar glitches. Pinning of vortices to ions can decouple the superfluid from the crust and create a reservoir of angular momentum. Sudden large scale unpinning can lead to an observable glitch. In this paper we investigate the scattering of a free vortex off a pinning potential and calculate its mean free path, in order to assess whether unpinned vortices can skip multiple pinning sites and come close enough to their neighbours to trigger avalanches, or whether they simply hop from one pinning site to another giving rise to a more gradual creep. We find that there is a significant range of parameter space in which avalanches can be triggered, thus supporting the hypothesis that they may lie at the origin of pulsar glitches. For realistic values of the pinning force and superfluid drag parameters we find that avalanches are more likely in the higher density regions of the crust where pinning is stronger. Physical dif...

  3. Dipentamethylene thiuram monosulfide is a novel inhibitor of Pin1.

    Science.gov (United States)

    Tatara, Yota; Lin, Yi-Chin; Bamba, Yoshimasa; Mori, Tadashi; Uchida, Takafumi

    2009-07-03

    Pin1 is involved in eukaryotic cell proliferation by changing the structure and function of phosphorylated proteins. PiB, the Pin1 specific inhibitor, blocks cancer cell proliferation. However, low solubility of PiB in DMSO has limited studies of its effectiveness. We screened for additional Pin1 inhibitors and identified the DMSO-soluble compound dipentamethylene thiuram monosulfide (DTM) that inhibits Pin1 activity with an EC50 value of 4.1 microM. Molecular modeling and enzyme kinetic analysis indicated that DTM competitively inhibits Pin1 activity, with a K(i) value of 0.05 microM. The K(D) value of DTM with Pin1 was determined to be 0.06 microM by SPR technology. Moreover, DTM specifically inhibited peptidyl-prolyl cis/trans isomerase activity in HeLa cells. FACS analysis showed that DTM induced G0 arrest of the HCT116 cells. Our results suggest that DTM has the potential to guide the development of novel antifungal and/or anticancer drugs.

  4. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    Science.gov (United States)

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  5. Development of InGaAsSb Based Monolithic Interconnected Modules (MIMs)

    Science.gov (United States)

    Palmisiano, M. N.; Biefeld, R. M.; Cederberg, J. G.; Hafich, M. J.; Peake, G. M.

    2003-01-01

    The quaternary Sb-based materials are attractive for use in TPV devices due to the versatility associated with being able to grow InGaAsSb and AlGaAsSb material with a wide range of band gaps lattice matched to a GaSb substrate. Photodiodes (0.60 eV) consisting of an InGaAsSb p/n junction grown on GaSb were fabricated and characterized to establish baseline electrical performance of the material. In order to fabricate monolithic interconnected modules (MIMs) from these photodiodes using a conductive GaSb substrate, an electrical isolation layer must be added between the active layers and the substrate. For this purpose, AlGaAsSb cell isolation diodes (CIDs) were developed and characterized with respect to their ability to block current in reverse bias. These structures were combined in the first MIM structures grown and fabricated from Sb-based materials on GaSb substrates.

  6. Development of monolith Nd:YAG /Cr+4:YAG passively Q-switched microchip laser

    Science.gov (United States)

    Izhnin, Ihor; Vakiv, Mykola; Izhnin, Aleksandr; Syvorotka, Igor; Ubizskii, Sergii; Syvorotka, Ihor, Jr.

    2005-09-01

    The main features of passively Q-switched microchip lasers development are considered. The active medium of laser is an epitaxial structure combining an epitaxial layer of saturable absorber Cr4+:Y3Al5O12 (Cr:YAG) grown on substrate of generating crystal Nd:YAG by liquid phase epitaxy. The modulator layer has an initial optical absorption of 36 cm-1 at wavelength of lasing (1064 nm). The epitaxial layer grown on unworking side was mechanically removed and this substrate side was optically polished. The other one was processed precisely to needed thickness. The cavity's mirrors were deposited by electron beam technique directly on each side of the structure to form a rugged, monolithic resonator. Diode laser Model ATC-C4000 with lasing wavelength 808 nm provided the CW end pumping. The output pulses parameters were investigated by means of test bench consisting of photoelectric transducer FEK-15 and Digital Phosphor Oscilloscope TDS 5052B. The obtained laser parameter are as follows: pulse width (FWHM) about 1.3 ns, repetition rate 5.5 kHz, average output power about 10 mW, pulse energy 1.0 μJ, pick power 1.2 kW. The possible solutions for laser parameter improving and optimization are discussed.

  7. Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser

    Science.gov (United States)

    Oennegren, Jan; Svedin, Jan; Sahlen, Olof; Jansson, Mats; Alping, Arne G.

    1995-10-01

    Electroabsorption modulators (EA) are attractive components for very high speed digital links (up to 40 Gbit/s). The objective of the present work has been to evaluate the analog performance and use of a Franz Keldysh modulator (FK) monolithically integrated with a DFB laser (DFB/FK-modulator) operating at 1550 nm. This DFB/FK-modulator is a combination of a directly modulated laser diode and an external modulator in one chip. The analog performance is therefore depending on both the modulator bias voltage and DFB-laser bias current. The normal optical output characteristic from an EA-modulator has a strongly nonlinear behavior. The modulator described in this paper shows for low bias voltage and/or high laser current a linear bahavior. This linear behavior is mainly due to the hole pile-up effect at the p/i-interface of the modulator. In digital transmission system this hole pile-up effect is a disadvantage, but in an analog transmission system it can be used to achieve better analog performance. Measurements (and simulations) on the DFB/FK-modulator show that its analog performance competes well with direct modulated FP and DFB lasers, especially if the modulator is biased for optimum analog performance.

  8. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser

    Science.gov (United States)

    Cheng, YuanBing; Pan, JiaoQing; Zhou, Fan; Wang, BaoJun; Zhu, Hongliang; Zhao, Lingjuan; Wang, Wei

    2007-11-01

    High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250 μm DFB and 170 μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

  9. Preparation of poly(γ-glutamic acid)/hydroxyapatite monolith via biomineralization for bone tissue engineering.

    Science.gov (United States)

    Park, Sung-Bin; Hasegawa, Urara; van der Vlies, André J; Sung, Moon-Hee; Uyama, Hiroshi

    2014-01-01

    A hybrid monolith of poly(γ-glutamic acid) and hydroxyapatite (PGA/HAp monolith) was prepared via biomineralization and used as a macroporous cell scaffold in bone tissue engineering. The PGA monolith having a bimodal pore size distribution was used as a substrate to induce biomineralization. The PGA/HAp monolith was obtained by immersing the PGA monolith in simulated body fluid. Pretreatment with CaCl2 enhanced the apatite-forming ability of the PGA monolith. Murine osteoblastic MC3T3-E1 cells efficiently attached and proliferated on the PGA/HAp monolith. MTT assay showed that both the PGA and PGA/HAp monolith did not have apparent cytotoxicity. Moreover, the PGA and PGA/HAp monoliths adsorbed bone morphogenetic protein-2 (BMP-2) by electrostatic interaction which was slowly released in the medium during cell culture. The PGA/HAp monolith enhanced BMP-2 induced alkaline phosphatase activity compared to the PGA monolith and a polystyrene culture plate. Thus, these PGA/HAp monoliths may have potential in bone tissue engineering.

  10. Repeat biopsy in patients with initial diagnosis of PIN; La biopsia ripetuta nei pazienti con diagnosi iniziale di PIN

    Energy Technology Data Exchange (ETDEWEB)

    De Matteis, Massimo [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Albertoni; Poggi, Cristina; De Martino, Antonietta; Pavlica, Pietro [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Palagi, Dipartimento area radiologica; Corti, Barbara [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Anatomia ed istologia patologica, Dipartimento oncologico ed ematologico; Barozzi, Libero [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia d' urgenza, Dipartimento emergenze ed accettazione

    2005-09-15

    Purpose. Prostatic intra-epithelial neoplasia (PIN) is considered a pre-malignant lesion and the main precursor of invasive prostatic adenocarcinoma. A PIN diagnosis established by prostate needle biopsy poses a difficult clinical management. problem. We retrospectively reviewed our three-year experience in order to identify criteria for referring patients to repeat biopsy. Materials and methods. We reviewed the repeat biopsy records of 72 patients in whom PIN had been detected on initial US-guided needle biopsy of the prostate. All the patients had a minimum of 6 biopsy cores taken, and they all had PSA > 4 ng/ml. Results. Adenocarcinoma was detected in 15 patients out of 50 (30%) with an initial diagnosis of low-grade PIN and in 10 patients out of 22 (45.4%) with high grade PIN, in 7 out of 18 (39%) in whom PSA levels had decreased during the observation interval, in 16 patients out of 46 (35%) in whom the PSA had increased and in 2 patients out of 8 (25%) with stable PSA. Conclusions. Our results seem to confirm that PIN can be considered a precursor of prostatic adenocarcinoma or a histological alteration often associated with it. Patients with low-grade PIN and particularly those with high-grade PIN should be regularly subjected to repeat biopsy at short intervals due to the high frequency of the final diagnosis of carcinoma. No agreement has been reached on the time interval between the first and the second biopsy. The PSA changes during the observation period are not a statistically significant parameter to suggest the repetition of prostatic biopsy. [Italian] Scopo. La neoplasia prostatica intraepiteliale (PIN) e considerata una lesione premaligna ed il precursore principale dell'adenocarcinoma prostatico infiltrante. La diagnosi di PIN ottenuta con l'agobiopsia della prostata rappresenta un difficile problema gestionale clinico. In una valutazione retrospettiva della nostra esperienza di 3 anni si e cercato di individuare i criteri che possano

  11. Pin-Hole Luminosity Monitor with Feedback

    Science.gov (United States)

    Norem, James H.; Spencer, James E.

    Previously, the generalized luminosity { L} was defined and calculated for all incident channels based on an NLC e+e- design. Alternatives were then considered to improve the differing beam-beam effects in the e-e-, eγ and γγ channels. Regardless of the channel, there was a large flux of outgoing, high energy photons that were produced from the beam-beam interaction e.g. beamstrahlung that needs to be disposed of and whose flux depended on { L}. One approach to this problem is to consider it a resource and attempt to take advantage of it by disposing of these straight-ahead photons in more useful ways than simply dumping them. While there are many options for monitoring the luminosity, any method that allows feedback and optimization in real time and in a non-intercepting and non-interfering way during normal data taking is extremely important - especially if it provides other capabilities such as high resolution tuning of spot sizes and can be used for all incident channels without essential modifications to their setup. Our "pin-hole" camera appears to be such a device if it can be made to work with high energy photons in ways that are compatible with the many other constraints and demands on space around the interaction region. The basis for using this method is that it has, in principle, the inherent resolution and bandwidth to monitor the very small spot sizes and their stabilities that are required for very high, integrated luminosity. While there are many possible, simultaneous uses of these outgoing photon beams, we limit our discussion to a single, blind, proof-of-principle experiment that was done on the FFTB line at SLAC to certify the concept of a camera obscura for high energy photons.

  12. Interplay between collective pinning and artificial defects on domain wall propagation in Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Rodriguez, G; Hierro-Rodriguez, A; Perez-Junquera, A; Montenegro, N; Alameda, J M; Velez, M [Dept. Fisica, Universidad de Oviedo-CINN, 33007 Oviedo (Spain); Menendez, J L [Centro de Investigacion en Nanomateriales y Nanotecnologia (CINN). Principado de Asturias-Consejo Superior de Investigaciones Cientificas (CSIC)-Univ. Oviedo -UO, Parque Tecnologico de Asturias, 33428 Llanera (Spain); Ravelosona, D, E-mail: mvelez@uniovi.e [Institut d' Electronique Fondamentale, UMR CNRS 8622, Univ. Paris Sud, 91405 Orsay Cedex (France)

    2010-08-04

    The interplay between collective pinning on intrinsic structural defects and artificial pinning at a patterned hole is studied in magnetic multilayers with perpendicular anisotropy. The pinning strength of a patterned hole is measured through its efficiency to stop domain wall (DW) propagation into a consecutive unpatterned nanowire section (using antisymmetric magnetoresistance to detect the direction of DW propagation) whereas collective pinning is characterized by the field dependence of DW velocity. Close to room temperature, collective pinning becomes weaker than artificial pinning so that pinning at the hole compensates nucleation-pad geometry, blocking DW propagation across the nanowire.

  13. Numerical Simulation of Fluid Dynamics in a Monolithic Column

    Directory of Open Access Journals (Sweden)

    Kazuhiro Yamamoto

    2017-01-01

    Full Text Available As for the measurement of polycyclic aromatic hydrocarbons (PAHs, ultra-performance liquid chromatography (UPLC is used for PAH identification and densitometry. However, when a solvent containing a substance to be identified passes through a column of UPLC, a dedicated high-pressure-proof device is required. Recently, a liquid chromatography instrument using a monolithic column technology has been proposed to reduce the pressure of UPLC. The present study tested five types of monolithic columns produced in experiments. To simulate the flow field, the lattice Boltzmann method (LBM was used. The velocity profile was discussed to decrease the pressure drop in the ultra-performance liquid chromatography (UPLC system.

  14. A Monolithic Oxide-Based Transversal Thermoelectric Energy Harvester

    Science.gov (United States)

    Teichert, S.; Bochmann, A.; Reimann, T.; Schulz, T.; Dreßler, C.; Udich, S.; Töpfer, J.

    2016-03-01

    We report the fabrication and properties of a monolithic transversal thermoelectric energy harvester based on the combination of a thermoelectric oxide and a metal. The fabrication of the device is done with a ceramic multilayer technology using printing and co-firing processes. Five transversal devices were combined to a meander-like thermoelectric generator. Electrical measurements and finite element calculations were performed to characterize the resulting thermoelectric generator. A maximum experimental electrical power output of 30.2 mW at a temperature difference of {Δ }T = 208 K was found. The prepared monolithic thermoelectric generator provides at {Δ }T = 35 K sufficient energy to drive a simple electronic sensor application.

  15. Monolithic Michelson Interferometer as ultra stable wavelength reference

    Science.gov (United States)

    Wan, Xiaoke; Ge, Jian

    2010-07-01

    Ultra-stable Monolithic Michelson interferometer can be an ideal reference for highprecision applications such as RV measurement in planet searching and orbit study. The advantages include wide wavelength range, simple sinusoidal spectral format, and high optical efficiency. In this paper, we report that a monolithic Michelson interferometers has been in-house developed with minimized thermal sensitivity with compensation tuning. With a scanning white light interferometer, the thermal sensitivity is measured ~ 6x10-7/°C at 550 nm and it decreases to zero near 1000 nm. We expect the wideband wavelength reference source to be stabilized better than 0.3 m/s for RV experiments

  16. Synthesis of ZSM-5 Monoliths with Hierarchical Porosity

    Institute of Scientific and Technical Information of China (English)

    Tong Yangchuan; Zhao Tianbo; Li Fengyan; Zong Baoning; Wang Yue

    2006-01-01

    A new route to synthesize ZSM-5 monoliths with hierarchical pore structure has been referred to in this stud y. The successful incorporation of the macropores and mesopores within the ZSM-5 structure was achieved through transforming the skeleton of the macroporous silica gel into zeolite ZSM-5 using carbon materials as the transitional template. The ZSM-5 crystal covered part of the macroporous material, and provided micropores to the macroporous silica gel. The structure of carbon monolith was studied after dissolving the silica contained in the carbon/silica composite.

  17. Lectin-carbohydrate interactions on nanoporous gold monoliths.

    Science.gov (United States)

    Tan, Yih Horng; Fujikawa, Kohki; Pornsuriyasak, Papapida; Alla, Allan J; Ganesh, N Vijaya; Demchenko, Alexei V; Stine, Keith J

    2013-07-01

    Monoliths of nanoporous gold (np-Au) were modified with self-assembled monolayers of octadecanethiol (C18-SH), 8-mercaptooctyl α-D-mannopyranoside (αMan-C8-SH), and 8-mercapto-3,6-dioxaoctanol (HO-PEG2-SH), and the loading was assessed using thermogravimetric analysis (TGA). Modification with mixed SAMs containing αMan-C8-SH (at a 0.20 mole fraction in the SAM forming solution) with either octanethiol or HO-PEG2-SH was also investigated. The np-Au monoliths modified with αMan-C8-SH bind the lectin Concanavalin A (Con A), and the additional mass due to bound protein was assessed using TGA analysis. A comparison of TGA traces measured before and after exposure of HO-PEG2-SH modified np-Au to Con A showed that the non-specific binding of Con A was minimal. In contrast, np-Au modified with octanethiol showed a significant mass loss due to non-specifically adsorbed Con A. A significant mass loss was also attributed to binding of Con A to bare np-Au monoliths. TGA revealed a mass loss due to the binding of Con A to np-Au monoliths modified with pure αMan-C8-SH. The use of mass losses determined by TGA to compare the binding of Con A to np-Au monoliths modified by mixed SAMs of αMan-C8-SH and either octanethiol or HO-PEG2-SH revealed that binding to mixed SAM modified surfaces is specific for the mixed SAMs with HO-PEG2-SH but shows a significant contribution from non-specific adsorption for the mixed SAMs with octanethiol. Minimal adsorption of immunoglobulin G (IgG) and peanut agglutinin (PNA) towards the mannoside modified np-Au monoliths was demonstrated. A greater mass loss was found for Con A bound onto the monolith than for either IgG or PNA, signifying that the mannose presenting SAMs in np-Au retain selectivity for Con A. TGA data also provide evidence that Con A bound to the αMan-C8-SH modified np-Au can be eluted by flowing a solution of methyl α-D-mannopyranoside through the structure. The presence of Con A proteins on the modified np-Au surface was

  18. Paladin Enterprises: Monolithic particle physics models global climate.

    CERN Multimedia

    2002-01-01

    Paladin Enterprises presents a monolithic particle model of the universe which will be used by them to build an economical fusion energy system. The model is an extension of the work done by James Clerk Maxwell. Essentially, gravity is unified with electro-magnetic forces and shown to be a product of a closed loop current system, i.e. a particle - monolithic or sub atomic. This discovery explains rapid global climate changes which are evident in the geological record and also provides an explanation for recent changes in the global climate.

  19. Role of the Arabidopsis PIN6 Auxin Transporter in Auxin Homeostasis and Auxin-Mediated Development

    OpenAIRE

    2013-01-01

    Plant-specific PIN-formed (PIN) efflux transporters for the plant hormone auxin are required for tissue-specific directional auxin transport and cellular auxin homeostasis. The Arabidopsis PIN protein family has been shown to play important roles in developmental processes such as embryogenesis, organogenesis, vascular tissue differentiation, root meristem patterning and tropic growth. Here we analyzed roles of the less characterised Arabidopsis PIN6 auxin transporter. PIN6 is auxin-inducible...

  20. THE PROPERTIES AND MICROSTRUCTURE OF NB-47TI SUPERCONDUCTOR WITH MAGNETIC PINNING CENTERS.

    Energy Technology Data Exchange (ETDEWEB)

    MOTOWIDLO,L.R.RUDZIAK,M.D.WONG,T.COOLEY,L.D.LEE,P.J.

    2004-02-04

    We have investigated Nb-47Ti multifilament wire with artificial pinning centers (APC). The superconducting properties and proximity effect in wires with ferromagnetic and non-magnetic pins will be discussed. Magnetization and transport measurements will be presented and the pinning characteristics will be discussed as a function of magnetic field, temperature and volume percent pins. In addition, field emission scanning electron microscopy of the pin nanostructure will be presented.