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Sample records for monocrystalline germanium film

  1. The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

    Directory of Open Access Journals (Sweden)

    Obrenović Marija D.

    2016-01-01

    Full Text Available The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

  2. Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof

    KAUST Repository

    Bakr, Osman M.

    2017-03-02

    Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see fig. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.

  3. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  5. Graphene-like monolayer low-buckled honeycomb germanium film

    Science.gov (United States)

    He, Yezeng; Luo, Haibo; Li, Hui; Sui, Yanwei; Wei, Fuxiang; Meng, Qingkun; Yang, Weiming; Qi, Jiqiu

    2017-04-01

    Molecular dynamics simulations have been performed to study the cooling process of two-dimensional liquid germanium under nanoslit confinement. The results clearly indicates that the liquid germanium undergoes an obvious liquid-solid phase transition to a monolayer honeycomb film with the decrease of temperature, accompanying the rapid change in potential energy, atomic volume, coordination number and lateral radial distribution function. During the solidification process, some hexagonal atomic islands first randomly emerge in the disordered liquid film and then grow up to stable crystal grains which keep growing and finally connect together to form a honeycomb polycrystalline film. It is worth noting that the honeycomb germanium film is low-buckled, quite different from the planar graphene.

  6. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

    1985-01-01

    Individual, as well as multiple doses of /sup 27/Al/sup +/, /sup 31/P/sup +/, /sup 28/Si/sup +/, and /sup 28/Si/sup +/ and /sup 12/C/sup +/, were implanted into (100) oriented monocrystalline ..beta..-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of ..beta..-SiC via implantation of /sup 27/Al/sup +/ and /sup 31/P/sup +/ was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800/sup 0/C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed.

  7. Investigation of the group growing process for monocrystalline germanium rods by Stepanov's method in a rectilinear thermal zone

    CERN Document Server

    Egorov, L P; Zatulovskii, L M; Chaikin, P M; Gulyaev, Y V; Zhvirblyanskii, V Yu; Levinzon, D I; Smirnov, Yu M; Sachkov, G V

    1973-01-01

    The apparatus used had a floating former for the stable growth of 7.9 germanium rods of 8.9 mm. dia. from a crucible charge of approximately 3 kg. The control of the crystal growth front is discussed in experimental and theoretical terms. It is claimed that inspection of the crystal front during growth, made possible in this apparatus by the provision of ports in the heater screens, greatly facilitates control and increases the quality (dislocation density, specific resistance etc.) of the product. (1 refs).

  8. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  9. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    Science.gov (United States)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  10. Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells.

    Science.gov (United States)

    Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

    2012-07-02

    In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference time domain optical simulations are performed in order to design one- and two-dimensional photonic crystals to assist crystalline silicon solar cells. The simulations show that the 1D and 2D patterned solar cell stacks would have an increased integrated absorption in the crystalline silicon layer would increase of respectively 38% and 50%, when compared to a similar but unpatterned stack, in the whole wavelength range between 300 nm and 1100 nm. In order to fabricate such patterned stacks, we developed an effective set of processes based on laser holographic lithography, reactive ion etching and inductively coupled plasma etching. Optical measurements performed on the patterned stacks highlight the significant absorption increase achieved in the whole wavelength range of interest, as expected by simulation. Moreover, we show that with this design, the angle of incidence has almost no influence on the absorption for angles as high as around 60°.

  11. On the crystallization of amorphous germanium films

    Science.gov (United States)

    Edelman, F.; Komem, Y.; Bendayan, M.; Beserman, R.

    1993-06-01

    The incubation time for crystallization of amorphous Ge (a-Ge) films, deposited by e-gun, was studied as a function of temperature between 150 and 500°C by means of both in situ transmission electron microscopy and Raman scattering spectroscopy. The temperature dependence of t0 follows an Arrhenius curve with an activation energy of 2.0 eV for free-sustained a-Ge films. In the case where the a-Ge films were on Si 3N 4 substrate, the activation energy of the incubation process was 1.3 eV.

  12. Electronic Structure of Germanium Nanocrystal Films Probed with Synchrotron Radiation

    Energy Technology Data Exchange (ETDEWEB)

    Bostedt, C

    2002-05-01

    The fundamental structure--property relationship of semiconductor quantum dots has been investigated. For deposited germanium nanocrystals strong quantum confinement effects have been determined with synchrotron radiation based x-ray absorption and photoemission techniques. The nanocrystals are condensed out of the gas phase with a narrow size distribution and subsequently deposited in situ onto various substrates. The particles are crystalline in the cubic phase with a structurally disordered surface shell and the resulting film morphology depends strongly on the substrate material and condition. The disordered surface region has an impact on the overall electronic structure of the particles. In a size-dependent study, the conduction and valence band edge of germanium nanocrystals have been measured for the first time and compared to the bulk crystal. The band edges move to higher energies as the particle size is decreased, consistent with quantum confinement theory. To obtain a more accurate analysis of confinement effects in the empty states, a novel analysis method utilizing an effective particle size for the x-ray absorption experiment, which allows a deconvolution of absorption edge broadening effects, has been introduced. Comparison of the present study to earlier studies on silicon reveals that germanium exhibits stronger quantum confinement effects than silicon. Below a critical particle size of 2.3 {+-} 0.7 nm, the band gap of germanium becomes larger than that of silicon--even if it is the opposite for bulk materials. This result agrees phenomenologically with effective mass and tight binding theories but contradicts the findings of recent pseudopotential calculations. The discrepancy between theory and experiments is attributed to the differences in the theoretical models and experimental systems. The experimentally observed structural disorder of the particle surface has to be included in the theoretical models.

  13. Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on si wafer prepared by fast cooling immediately after sputter deposition.

    Science.gov (United States)

    Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji

    2014-09-01

    We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e(31,f) = ~-11 C/m(2), with remarkably small dielectric constants, ϵ(r) = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

  14. Large-area monocrystalline silicon thin films by annealing of macroporous arrays: Understanding and tackling defects in the material

    Science.gov (United States)

    Depauw, Valérie; Gordon, Ivan; Beaucarne, Guy; Poortmans, Jef; Mertens, Robert; Celis, Jean-Pierre

    2009-08-01

    A concept that could provide a thin monocrystalline-silicon absorber layer without resorting to the expensive step of epitaxy would be very appealing for reducing the cost of solar cells. The empty-space-in-silicon technique by which thin films of silicon can be formed by reorganization of regular arrays of cylindrical voids at high temperature may be such a concept if the high quality of the thin film could be ensured on centimeter-large areas. While previous works mainly investigated the influence of the porous array on the final structure, this work focuses on the practical aspects of the high-temperature step and its application to large areas. An insight into the defects that may form is given and the origin of these defects is discussed, providing recommendations on how to avoid them. Surface roughening, pitting, formation of holes, and silicon pillars could be attributed to the nonuniform reactions between Si, SiO2, and SiO. Hydrogen atmospheres are therefore preferred for reorganization of macroporous arrays. Argon atmospheres, however, may provide high-quality silicon thin films as well, possibly even more easily transferable, as long as annealing is performed in controlled, clean, and oxygen-free conditions. Our experiments on large areas also highlight the importance of kinetics, which had not been considered up to now and which will require further understanding to ensure a complete reorganization over any wafer area.

  15. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  16. Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, I.; Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vallon, S. [Corning European Technology Center, 7bis avenue de Valvins, 77210 Avon (France); Mayolet, A. [Corning Incorporated, SP-FR02-12, Corning, NY 14831 (United States)

    2010-02-15

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. One way to create crystalline-silicon thin films on non-silicon substrates is to use the so-called ''seed layer approach'', in which a thin crystalline-silicon seed layer is first created, followed by epitaxial thickening of this seed layer. In this paper, we present the first solar cell results obtained on 10-{mu}m-thick monocrystalline-silicon (mono-Si) layers obtained by a seed layer approach on transparent glass-ceramic substrates. The seed layers were made using implant-induced separation and anodic bonding. These layers were then epitaxially thickened by thermal CVD. Simple solar cell structures without integrated light trapping features showed efficiencies of up to 7.5%. Compared to polycrystalline-silicon layers made by aluminum-induced crystallization of amorphous silicon and thermal CVD, the mono-Si layers have a much higher bulk diffusion lifetime. (author)

  17. Thin-film monocrystalline-silicon solar cells based on a seed layer approach with 11% efficiency

    Science.gov (United States)

    Gordon, I.; Qiu, Y.; Van Gestel, D.; Poortmans, J.

    2010-09-01

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. Almost half of the price of wafer-based silicon solar modules is currently due to the cost of the silicon wafers themselves. Using crystalline-silicon thin-film as the active material would substantially reduce the silicon consumption while still ensuring a high cell-efficiency potential and a stable cell performance. One way to create a crystalline-silicon thin film on glass is by using a seed layer approach in which a thin crystalline-silicon layer is first created on a non-silicon substrate, followed by epitaxial thickening of this layer. In this paper, we present new solar cell results obtained on 10-micron thick monocrystalline-silicon layers, made by epitaxial thickening of thin seed layers on transparent glass-ceramic substrates. We used thin (001)-oriented silicon single-crystal seed layers on glass-ceramic substrates provided by Corning Inc. that are made by a process based on anodic bonding and implant-induced separation. Epitaxial thickening of these seed layers was realized in an atmospheric-pressure chemical vapor deposition system. Simple solar cell structures in substrate configuration were made from the epitaxial mono-silicon layers. The Si surface was plasma-textured to reduce the front-side reflection. No other light trapping features were incorporated. Efficiencies of up to 11% were reached with Voc values above 600 mV indicating the good electronic quality of the material. We believe that by further optimizing the material quality and by integrating an efficient light trapping scheme, the efficiency potential of these single-crystal silicon thin films on glass-ceramics should be higher than 15%.

  18. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  19. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  20. Theoretically predicted and experimentally determined effects of the Si/(Si + C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films

    Science.gov (United States)

    Kim, H. J.; Davis, R. F.

    1986-10-01

    The effects of the Si/(Si + C) ratio in the reaction gas stream on the growth and properties of monocrystalline beta-SiC films grown on Si(100) substrates via chemical vapor deposition have been theoretically and experimentally studied. The amounts of condensed phases of beta-SiC and Si, and the partial pressures of the remaining Si and C-containing gases as a function of the Si/(Si + C) ratio in the source gases have been initially obtained from thermodynamic calculations using the 'SOLGASMIX-PV' computer program. Complementary and comparative experimental growth studies have shown that inclusion-free films having maximum values in growth rate and carrier concentration and a minimum value of resistivity were obtained near Si/(Si + C) = 0.5.

  1. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Science.gov (United States)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  2. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Science.gov (United States)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  3. Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

    Science.gov (United States)

    Hara, Akito; Nishimura, Yuya; Ohsawa, Hiroki

    2017-03-01

    Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source-drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V-1 s-1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

  4. Perovskite/germanium tandem: A potential high efficiency thin film solar cell design

    Science.gov (United States)

    Zi, Wei; Ren, Xiaodong; Ren, Xianpei; Wei, Qinbo; Gao, Fei; Liu, Shengzhong Frank

    2016-12-01

    Perovskite absorbs from ultraviolet (UV) to ∼800 nm, and germanium covers to 1800 nm, the combination shows excellent match in terms of solar spectrum-splitting. The optical properties of CH3NH3PbI3-xClx perovskite and single-crystalline germanium (c-Ge) tandem solar cell on a special designed substrate with triangular grating are analyzed and discussed. The finite difference time domain (FDTD) approach is used to solve the Maxwell's equations in three dimensions rigorously. By optimizing the absorption layer thickness, the current match between the top and the bottom component cells is achieved using very thin films as thin as 1500 nm. By controlling the thickness of perovskite and c-Ge to 750 nm each, high short circuit current density (Jsc) of the tandem solar cell is achieved to as high as 23.70 mA/cm2. The perovskite/c-Ge tandem thin film cell design is capable of a potential efficiency 24.88% based on the simulation.

  5. Improving the Cycling Life of Aluminum and Germanium Thin Films for use as Anodic Materials in Li-Ion Batteries.

    Energy Technology Data Exchange (ETDEWEB)

    Hudak, Nicholas [Dominican Univ., River Forest, IL (United States); Huber, Dale L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gulley, Gerald [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-09-01

    The cycling of high-capacity electrode materials for lithium-ion batteries results in significant volumetric expansion and contraction, and this leads to mechanical failure of the electrodes. To increase battery performance and reliability, there is a drive towards the use of nanostructured electrode materials and nanoscale surface coatings. As a part of the Visiting Faculty Program (VFP) last summer, we examined the ability of aluminum oxide and gold film surface coatings to improve the mechanical and cycling properties of vapor-deposited aluminum films in lithium-ion batteries. Nanoscale gold coatings resulted in significantly improved cycling behavior for the thinnest aluminum films whereas aluminum oxide coatings did not improve the cycling behavior of the aluminum films. This summer we performed a similar investigation on vapor-deposited germanium, which has an even higher theoretical capacity per unit mass than aluminum. Because the mechanism of lithium-alloying is different for each electrode material, we expected the effects of coating the germanium surface with aluminum oxide or gold to differ significantly from previous observations. Indeed, we found that gold coatings gave only small or negligible improvements in cycling behavior of germanium films, but aluminum oxide (Al2O3) coatings gave significant improvements in cycling over the range of film thicknesses tested.

  6. A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

    Science.gov (United States)

    Shumei, Lai; Danfeng, Mao; Zhiwei, Huang; Yihong, Xu; Songyan, Chen; Cheng, Li; Wei, Huang; Dingliang, Tang

    2016-09-01

    Plasma treatment and 10% NH4OH solution rinsing were performed on a germanium (Ge) surface. It was found that the Ge surface hydrophilicity after O2 and Ar plasma exposure was stronger than that of samples subjected to N2 plasma exposure. This is because the thin GeO x film formed on Ge by O2 or Ar plasma is more hydrophilic than GeO x N y formed by N2 plasma treatment. A flat (RMS direct wafer bonding. Project supported by the Key Project of Natural Science Foundation of China (No. 61534005), the National Science Foundation of China (No. 61474081), the National Basic Research Program of China (No. 2013CB632103), the Natural Science Foundation of Fujian Province (No. 2015D020), and the Science and Technology Project of Xiamen City (No. 3502Z20154091).

  7. Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

    Directory of Open Access Journals (Sweden)

    José Ernesto Nájera-Carpio

    2015-07-01

    Full Text Available In this work, the irreversible processes in light heating of Silicon (Si and Germanium (Ge thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge.

  8. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Pei; Zaslavsky, Alexander [Department of Physics and School of Engineering, Brown University, 182-184 Hope St., Providence, Rhode Island 02912 (United States); Longo, Paolo [Gatan, Inc., 5794 W Las Positas Blvd., Pleasanton, California 94588 (United States); Pacifici, Domenico, E-mail: Domenico-Pacifici@brown.edu [School of Engineering, Brown University, 184 Hope St., Providence, Rhode Island 02912 (United States)

    2016-01-07

    Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Tauc and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.

  9. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

    Science.gov (United States)

    Liu, Pei; Longo, Paolo; Zaslavsky, Alexander; Pacifici, Domenico

    2016-01-01

    Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Tauc and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO2 superlattices with single and multiple a-Ge layers down to 2 nm thickness.

  10. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  11. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    Directory of Open Access Journals (Sweden)

    David J. Rowe

    2014-02-01

    Full Text Available Alloyed silicon-germanium (SiGe nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1−xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  12. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  13. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cariou, R., E-mail: romain.cariou@polytechnique.edu [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); III-V lab a joint laboratory between Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA-LETI, route de Nozay, 91460, Marcoussis, France. (France); Ruggeri, R. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy); Tan, X.; Nassar, J.; Roca i Cabarrocas, P. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); Mannino, Giovanni [CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy)

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  14. Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1 - xGexH) films prepared by reactive ion beam sputtering

    Science.gov (United States)

    Bhan, Mohan Krishan; Malhotra, L. K.; Kashyap, Subhash C.

    1989-09-01

    Thin films of hydrogenated amorphous silicon-germanium (a-Si1-xGex: H) alloys have been prepared by reactive ion beam sputtering of a composite target of silicon and germanium. The dependence of the deposition rate, conductivity-temperature variation, optical absorption coefficient, refractive index, imaginary part of the dielectric constant, hydrogen content, and infrared (IR) absorption spectra on germanium content (x) are reported and analyzed. For a typical composition—a-Si28Ge72:H (x=0.72), the effect of beam voltage, H2:Ar flow ratio, and substrate temperature on the material properties have also been investigated. For the films prepared with increasing x, the expected behavior of a decrease in both hydrogen content and band gap and an increase in the electrical conductivity have been observed. The films prepared at x>0.80 are found to be more homogeneous than the films deposited at 0.0disorder introduced by the random mixing of Si and Ge atoms in the a-Si1-xGex: H network in the latter case. The a-Si28Ge72:H films exhibiting minimum conductivity (1.7×10-7 Ω-1 cm-1) have been obtained for an H2:Ar flow ratio of 10:1 and a beam voltage and substrate temperature of 1500 V and 300 °C, respectively. These films contain a hydrogen concentration of 10.2 at. % and show an optical band gap of 1.25 eV. The IR studies have shown that a-Si28Ge72:H films prepared both at low beam voltages and at low substrate temperatures show the unusual preferential attachment of hydrogen to Ge rather than to Si.

  15. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Dominguez, A. Bustamante [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Llandro, J.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Quispe, O. Avalos [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Langford, R. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom)

    2014-10-15

    Highlights: • Annealing promotes outgassing of SiO{sub 2}/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO{sub 2} islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO{sub 2}/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10{sup 8}, respectively. Over an area of 22 × 10{sup −3} cm{sup 2} the density of bubbles obtained at slow annealing (9 × 10{sup 3} cm{sup −2}) is smaller than that at rapid annealing (6.4 × 10{sup 4} cm{sup −2}), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as

  16. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  17. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO x films and multilayer Ge/SiO2 structures

    Science.gov (United States)

    Grachev, D. A.; Ershov, A. V.; Karabanova, I. A.; Pirogov, A. V.; Nezhdanov, A. V.; Mashin, A. I.; Pavlov, D. A.

    2017-05-01

    The GeO x films and multilayer nanoperiodic Ge/SiO2 structures containing germanium nanocrystals were prepared by physical vapor deposition in vacuum. The properties of the films and multilayer structures were controlled by varying the deposition temperature in the range of 35-590°C and the annealing temperature in the range of 400-1000°C. A comparative study of the optical and structural characteristics of the nanosystems was performed using the methods of Raman scattering spectroscopy, IR spectroscopy, photoluminescence, and electron microscopy, which demonstrated a qualitative similarity of the nanosystems. It was found that annealing at temperatures in the range of 600-800°C leads to the formation of germanium nanocrystals with a high density ( 1012 cm-2), whereas in the materials not subjected to annealing, their density did not exceed 1010 cm-2. The average size of the nanocrystals was found to be 5 ± 2 nm. For both nanosystems, three luminescence bands were observed at 1.2, 1.5-1.7, and 1.7-2.0 eV. It was assumed that the origin of these bands is associated with germanium nanocrystals, oxygen-deficient centers in GeOx, and defects at the Ge/dielectric interface, respectively.

  18. Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering.

    Science.gov (United States)

    Taborda, J A Perez; Romero, J J; Abad, B; Muñoz-Rojo, M; Mello, A; Briones, F; Gonzalez, M S Martin

    2016-04-29

    Si x Ge1-x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si0.8Ge0.2 films that present improved thermoelectric performance (zT = 5.6 × 10(-4) at room temperature)--according to previously reported values on films--with a relatively large power factor (σ · S (2) = 16 μW · m(-1) · K(-2)). More importantly, a reduction in the thermal conductivity at room temperature (κ = 1.13 ± 0.12 W · m(-1) · K(-1)) compared to other Si-Ge films (∼3 W · m(-1) · K(-1)) has been found. Whereas the usual crystallization of amorphous SiGe (a-SiGe) is achieved at high temperatures and for long times, which triggers dopant loss, MIC reduces the crystallization temperature and the heating time. The associated dopant loss is thus avoided, resulting in a nanostructuration of the film. Using this method, we obtained Si0.8Ge0.2 films (grown by DC plasma sputtering) with appropriate compositional and structural properties. Different thermal treatments were tested in situ (by heating the sample inside the deposition chamber) and ex situ (annealed in an external furnace with controlled conditions). From the studies of the films by: x-ray diffraction (XRD), synchrotron radiation grazing incidence x-ray diffraction (SR-GIXRD), micro Raman, scanning electron microscopy (SEM), x-ray photoemission spectroscopy (XPS), Hall effect, Seebeck coefficient, electrical and thermal conductivity measurements, we observed that the in situ films at 500 °C presented the best zT values with no gold contamination.

  19. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, H. A.; Batalov, R. I., E-mail: batalov@kfti.knc.ru; Bayazitov, R. M.; Faizrakhmanov, I. A.; Lyadov, N. M.; Shustov, V. A. [Russian Academy of Sciences, Zavoiskii Physical Technical Institute, Kazan Scientific Center (Russian Federation); Galkin, K. N.; Galkin, N. G.; Chernev, I. M. [Russian Academy of Sciences, Institute of Automation and Control Processes, Far-East Branch (Russian Federation); Ivlev, G. D.; Prokop’ev, S. L.; Gaiduk, P. I. [Belarussian State University (Belarus)

    2015-06-15

    The structural and optical properties of thin Ge films deposited onto semiconducting and insulating substrates and modified by pulsed laser radiation are studied. The films are deposited by the sputtering of a Ge target with a low-energy Xe{sup +} ion beam. Crystallization of the films is conducted by their exposure to nanosecond ruby laser radiation pulses (λ = 0.694 μm) with the energy density W = 0.2−1.4 J cm{sup −2}. During pulsed laser treatment, the irradiated area is probed with quasi-cw (quasi-continuous-wave) laser radiation (λ = 0.532 and 1.064 μm), with the reflectance recorded R(t). Experimental data on the lifetime of the Ge melt are compared with the results of calculation, and good agreement between them is demonstrated. Through the use of a number of techniques, the dependences of the composition of the films, their crystal structure, the level of strains, and the reflectance and transmittance on the conditions of deposition and annealing are established.

  20. Determination of Total Germanium in Chinese Herbal Remedies by Square-Wave Catalytic Adsorptive Cathodic Stripping Voltammetry at an Improved Bismuth Film Electrode

    Directory of Open Access Journals (Sweden)

    Shangwei Zhong

    2013-01-01

    Full Text Available A catalytic adsorptive cathodic stripping voltammetric method on an improved bismuth film electrode (BiFE for the determination of trace germanium in the presence of pyrogallol has been investigated. A well-defined and sensitive stripping peak of Ge(IV-pyrogallol complex was observed at −0.79 V (versus SCE in a 0.1 M acetate buffer solution (pH 4.8 at a deposition potential of −0.34 V. The reduction current is catalytically enhanced by adding KBrO3. The experimental variables and potential interference were studied. Compared with the BiFE plated in the solution prepared based on HAc-NaAc without trisodium citrate, the improved BiFE electrodeposited in the solution of HAc-NaAc containing trisodium citrate displayed a better electroanalytical performance for the determination of germanium(IV. Under the optimized conditions, the detection limit of Ge(IV was 60 ng L−1, and the relative standard deviation (RSD was 3.73% at 5 μg L−1 level (n=9. This method was successfully applied to determine the total germanium in several Chinese herbal remedies.

  1. Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

    Science.gov (United States)

    Schmidt, J.; Tetzlaff, D.; Bugiel, E.; Wietler, T. F.

    2017-01-01

    We report on the impact of a surfactant on the growth mode and strain relaxation of thin Ge films on Si0.21Ge0.79 virtual substrates grown by surfactant mediated epitaxy on Si(001) wafers. Ge epitaxy without surfactant results in island formation after deposition of only 5 nm Ge. A certain part of the strain in the Ge islands is relaxed via interfacial misfit dislocations, which are located within the core part of the islands. We discuss the possibilities for the occurrence of three-dimensional growth at low Ge layer thickness. The use of Sb as a surfactant suppresses three-dimensional islanding and enables the growth of smooth pseudomorphically strained Ge films on Si0.21Ge0.79(001) virtual substrates up to a thickness of 10 nm. At thicknesses higher than 20 nm, the films relax via the formation of a misfit dislocation network at the Ge/ Si1-xGex interface. The surface roughness of up to 30 nm thick layers is below 1.6 nm. Our experimental results corroborate the calculated thickness for plastic relaxation of Ge on Si1-xGex. The effect of the surfactant on the growth of the virtual substrate and on the subsequent growth of Ge on Si0.21Ge0.79 is discussed.

  2. Superconducting transitions in amorphous molybdenum-germanium ultrathin films and multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Missert, N.

    1989-01-01

    The primary goal of this work was to clarify the role of enhanced Coulomb interactions in the destruction of superconductivity in disordered systems of reduced dimensions. Through a systematic study of the critical temperatures in single film sandwich and multilayer structures, the author has examined the role of dimensionality in the reduction of {Tc} in disordered superconductors. The author has observed a continuous crossover from two to three dimensional behavior as electron diffusion between individual superconducting layers in the multilayer becomes possible. This demonstrates unambiguously that the reduction in {Tc} is an artistic 2D effect and is not simply due to interface or proximity effects, as has often been assumed in the past. Multilayers were fabricated by sequential cosputtering of alternate layers of superconducting and nonsuperconducting amorphous Mo-Ge alloys. The effects of screening at short length scales in these films are probed via a systematic variation of both the distance between superconducting layers and the conductivity of the nonsuperconducting layers in a multilayer structure. As the conductivity of the nonsuperconducting layer increases, electron diffusion becomes more three dimensional. However this increased conductivity also introduces a reduction in {Tc} due to the proximity effect. This has been accounted for by comparing the T, of the multilayers with a corresponding NISIN single layer sandwich structure, designed to have an identical proximity effect reduction of {Tc}, in addition to compensating for any effect of the SIN interface itself. X-ray diffraction measurements and cross-sectional TEM micrographs confirm that the layers are structurally well defined, uniform, and continuous.

  3. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  4. Interplay of spin-orbit coupling and superconducting correlations in germanium telluride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, Vijay; Nguyen, Thuy-Anh; Mansell, Rhodri; Ritchie, David [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE (United Kingdom); Mussler, Gregor [Peter Gruenberg Institute (PGI-9), Forschungszentrum Juelich, 52425, Juelich (Germany)

    2016-03-15

    There is much current interest in combining superconductivity and spin-orbit coupling in order to induce the topological superconductor phase and associated Majorana-like quasiparticles which hold great promise towards fault-tolerant quantum computing. Experimentally these effects have been combined by the proximity-coupling of super-conducting leads and high spin-orbit materials such as InSb and InAs, or by controlled Cu-doping of topological insu-lators such as Bi{sub 2}Se{sub 3}. However, for practical purposes, a single-phase material which intrinsically displays both these effects is highly desirable. Here we demonstrate coexisting superconducting correlations and spin-orbit coupling in molecular-beam-epitaxy-grown thin films of GeTe. The former is evidenced by a precipitous low-temperature drop in the electrical resistivity which is quelled by a magnetic field, and the latter manifests as a weak antilocalisation (WAL) cusp in the magnetotransport. Our studies reveal several other intriguing features such as the presence of two-dimensional rather than bulk transport channels below 2 K, possible signatures of topological superconductivity, and unexpected hysteresis in the magnetotransport. Our work demonstrates GeTe to be a potential host of topological SC and Majorana-like excitations, and to be a versatile platform to develop quantum information device architectures. (copyright 2016 The Authors. Phys. Status Solidi RRL published by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Effect of antimony addition on the optical behaviour of germanium selenide thin films

    Science.gov (United States)

    Sharma, Parikshit; Rangra, V. S.; Sharma, Pankaj; Katyal, S. C.

    2008-11-01

    This paper reports the influence of antimony (Sb) addition on the optical properties (optical energy gap and refractive index) of thin solid films of the chalcogenide glassy Ge0.17Se0.83-xSbx(x = 0, 0.03, 0.09, 0.12, 0.15) system. This has been done by analysing the transmittance (T) and reflectance (R) spectra in the spectral region 400-2000 nm. It was found that the optical energy gap decreases with increasing Sb content from 1.92 to 1.63 eV with an uncertainty of ± 0.01 eV. The results were interpreted in terms of bond energies and on the basis of the concept of electronegativity. The refractive index has been found to increase with increasing Sb content. The increase in the refractive index has been explained on the basis of polarizability. Dispersion of refractive index has been analysed using the Wemple-DiDomenico single oscillator model. The static refractive index increased from 2.45 to 2.91 for the studied compositions. An estimate of the energy gap has also been taken theoretically and it has been found that both the optical energy gap (measured from T and R spectra) and the theoretical energy gap follow similar trends.

  6. Effect of antimony addition on the optical behaviour of germanium selenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Parikshit; Rangra, V S [Department of Physics, H. P. University, Summer Hill, Shimla (171005) (India); Sharma, Pankaj; Katyal, S C [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. (173215) (India)], E-mail: pankaj.sharma@juit.ac.in, E-mail: sharma_parikshit@yahoo.com

    2008-11-21

    This paper reports the influence of antimony (Sb) addition on the optical properties (optical energy gap and refractive index) of thin solid films of the chalcogenide glassy Ge{sub 0.17}Se{sub 0.83-x}Sb{sub x}(x = 0, 0.03, 0.09, 0.12, 0.15) system. This has been done by analysing the transmittance (T) and reflectance (R) spectra in the spectral region 400-2000 nm. It was found that the optical energy gap decreases with increasing Sb content from 1.92 to 1.63 eV with an uncertainty of {+-} 0.01 eV. The results were interpreted in terms of bond energies and on the basis of the concept of electronegativity. The refractive index has been found to increase with increasing Sb content. The increase in the refractive index has been explained on the basis of polarizability. Dispersion of refractive index has been analysed using the Wemple-DiDomenico single oscillator model. The static refractive index increased from 2.45 to 2.91 for the studied compositions. An estimate of the energy gap has also been taken theoretically and it has been found that both the optical energy gap (measured from T and R spectra) and the theoretical energy gap follow similar trends.

  7. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  8. Low yield sputtering of monocrystalline metals

    NARCIS (Netherlands)

    Veen, A. van; Fluit, J.M.

    1980-01-01

    Sputtering of monocrystalline metals by light noble gas ions is studied experimentally and theoretically at low primary ion energy. Evidence is found for a multiple collision process in which surface atoms are sputtered by backscattered ions. The introduction of the maximum recoil energy EM in the s

  9. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  10. Epitaxial silicon and germanium on buried insulator heterostructures and devices

    Science.gov (United States)

    Bojarczuk, N. A.; Copel, M.; Guha, S.; Narayanan, V.; Preisler, E. J.; Ross, F. M.; Shang, H.

    2003-12-01

    Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (<10 nm), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers.

  11. Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    Science.gov (United States)

    Stoddard, Nathan G

    2014-01-14

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  12. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    Science.gov (United States)

    Stoddard, Nathan G.

    2011-11-01

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  13. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  14. Silicon-Germanium Films Deposited by Low Frequency PE CVD: Effect of H2 and Ar Dilution

    Energy Technology Data Exchange (ETDEWEB)

    Kosarev, A; Torres, A; Hernandez, Y; Ambrosio, R; Zuniga, C; Felter, T E; Asomoza, R R; Kudriavtsev, Y; Silva-Gonzalez, R; Gomez-Barojas, E; Ilinski, A; Abramov, A S

    2005-09-22

    We have studied structure and electrical properties of Si{sub 1-Y}Ge{sub Y}:H films deposited by low frequency PE CVD over the entire composition range from Y=0 to Y=1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H{sub 2}. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found: (1) The deposition rate increased with Y maximizing at Y=1 without dilution. (2) The relative rate of Ge and Si incorporation is affected by dilution. (3) Hydrogen preferentially bonds to silicon. (4) Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge, i.e. the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity {gamma}-factor suggests a local minimum in the density of states at E {approx} 0.33 eV for the films grown with or without H-dilution and E {approx} 0.25 eV for the films with Ar dilution.

  15. Femtosecond laser direct writing of monocrystalline hexagonal silver prisms

    Energy Technology Data Exchange (ETDEWEB)

    Vora, Kevin; Kang, SeungYeon; Moebius, Michael [School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States); Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States); Department of Physics, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States)

    2014-10-06

    Bottom-up growth methods and top-down patterning techniques are both used to fabricate metal nanostructures, each with a distinct advantage: One creates crystalline structures and the other offers precise positioning. Here, we present a technique that localizes the growth of metal crystals to the focal volume of a laser beam, combining advantages from both approaches. We report the fabrication of silver nanoprisms—hexagonal nanoscale silver crystals—through irradiation with focused femtosecond laser pulses. The growth of these nanoprisms is due to a nonlinear optical interaction between femtosecond laser pulses and a polyvinylpyrrolidone film doped with silver nitrate. The hexagonal nanoprisms have bases hundreds of nanometers in size and the crystal growth occurs over exposure times of less than 1 ms (8 orders of magnitude faster than traditional chemical techniques). Electron backscatter diffraction analysis shows that the hexagonal nanoprisms are monocrystalline. The fabrication method combines advantages from both wet chemistry and femtosecond laser direct-writing to grow silver crystals in targeted locations. The results presented in this letter offer an approach to directly positioning and growing silver crystals on a substrate, which can be used for plasmonic devices.

  16. Femtosecond laser direct writing of monocrystalline hexagonal silver prisms

    Science.gov (United States)

    Vora, Kevin; Kang, SeungYeon; Moebius, Michael; Mazur, Eric

    2014-10-01

    Bottom-up growth methods and top-down patterning techniques are both used to fabricate metal nanostructures, each with a distinct advantage: One creates crystalline structures and the other offers precise positioning. Here, we present a technique that localizes the growth of metal crystals to the focal volume of a laser beam, combining advantages from both approaches. We report the fabrication of silver nanoprisms—hexagonal nanoscale silver crystals—through irradiation with focused femtosecond laser pulses. The growth of these nanoprisms is due to a nonlinear optical interaction between femtosecond laser pulses and a polyvinylpyrrolidone film doped with silver nitrate. The hexagonal nanoprisms have bases hundreds of nanometers in size and the crystal growth occurs over exposure times of less than 1 ms (8 orders of magnitude faster than traditional chemical techniques). Electron backscatter diffraction analysis shows that the hexagonal nanoprisms are monocrystalline. The fabrication method combines advantages from both wet chemistry and femtosecond laser direct-writing to grow silver crystals in targeted locations. The results presented in this letter offer an approach to directly positioning and growing silver crystals on a substrate, which can be used for plasmonic devices.

  17. Mineral commodity profiles: Germanium

    Science.gov (United States)

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  18. Protective infrared antireflection coating based on sputtered germanium carbide

    Science.gov (United States)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  19. Wetting of Au and Ag particles on monocrystalline graphite substrates

    Institute of Scientific and Technical Information of China (English)

    Joonho Lee; Toshihiro Tanaka; Kazufumi Seo; Nobumitsu Hirai; Jung-Goo Lee; Hirotaro Mori

    2006-01-01

    The wetting behavior of Au and Ag particles on a monocrystalline graphite substrate was investigated using the microscopic sessile drop method under a purified Ar atmosphere at 1300 K. The measured contact angles of the liquid Au and Ag on monocrystalline graphite substrates of (0001) face were 129° and 124°, respectively. It is believed that the interaction at the interface is dominated by the physical bonding (van der Waal's interaction).

  20. High Precision Metal Thin Film Liftoff Technique

    Science.gov (United States)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  1. Monocrystalline solar cells are gaining ground; Monokristallin im Aufwind

    Energy Technology Data Exchange (ETDEWEB)

    Bernreuter, Johannes

    2011-10-31

    Increasingly, manufacturers use selective emitters for serial production of solar cells of monocrystalline silicon with an efficiency of 19 percent. Strong competition will soon have them reach 20 percent. For the same reason, copper will become a substitute for expensive silver front contacts.

  2. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

    Science.gov (United States)

    Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong

    2016-10-01

    We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser.

  3. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  4. Optical gain in single tensile-strained germanium photonic wire.

    Science.gov (United States)

    de Kersauson, M; El Kurdi, M; David, S; Checoury, X; Fishman, G; Sauvage, S; Jakomin, R; Beaudoin, G; Sagnes, I; Boucaud, P

    2011-09-12

    We have investigated the optical properties of tensile-strained germanium photonic wires. The photonic wires patterned by electron beam lithography (50 μm long, 1 μm wide and 500 nm thick) are obtained by growing a n-doped germanium film on a GaAs substrate. Tensile strain is transferred in the germanium layer using a Si₃N₄ stressor. Tensile strain around 0.4% achieved by the technique corresponds to an optical recombination of tensile-strained germanium involving light hole band around 1690 nm at room temperature. We show that the waveguided emission associated with a single tensile-strained germanium wire increases superlinearly as a function of the illuminated length. A 20% decrease of the spectral broadening is observed as the pump intensity is increased. All these features are signatures of optical gain. A 80 cm⁻¹ modal optical gain is derived from the variable strip length method. This value is accounted for by the calculated gain material value using a 30 band k · p formalism. These germanium wires represent potential building blocks for integration of nanoscale optical sources on silicon.

  5. Growth, Characterization and Device Development in Monocrystalline Diamond Films

    Science.gov (United States)

    1991-09-30

    to 400’C," Appl. Phys. [46] J. E. Shigley , E. Fritsch. C. M. Stockton, J. I. Koivula, C. Len., vol. 51, pp. 2106-2108, Dec. 1987. W. Fryer, and R. E... Shigley , E. Fritsch, C. M. Stockton, J. I. Koivula, C. vol. EDL-8, pp. 428-430, Sept. 1987. W. Fryer, and R. E. Kane, Gems and Gemology, vol. 23, pp. (23

  6. Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Sabina Abdul Hadi

    2013-05-01

    Full Text Available The effect of germanium fraction on the effective minority carrier lifetime (τeff for epitaxial Si1-xGex layers is extracted using measurements on amorphous(a Si(n+/crystalline(c-Si1-xGex(p/crystalline(c-Si(p+ heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si0.75Ge0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si0.44Ge0.56. In addition, the band-gap voltage offset (Woc increases from 0.5 eV for Si to 0.65 eV for 56% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime.

  7. Sunlight-thin nanophotonic monocrystalline silicon solar cells

    Science.gov (United States)

    Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

    2017-09-01

    Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

  8. Hollow carbon nanobubbles: monocrystalline MOF nanobubbles and their pyrolysis.

    Science.gov (United States)

    Zhang, Wei; Jiang, Xiangfen; Zhao, Yanyi; Carné-Sánchez, Arnau; Malgras, Victor; Kim, Jeonghun; Kim, Jung Ho; Wang, Shaobin; Liu, Jian; Jiang, Ji-Sen; Yamauchi, Yusuke; Hu, Ming

    2017-05-01

    While bulk-sized metal-organic frameworks (MOFs) face limits to their utilization in various research fields such as energy storage applications, nanoarchitectonics is believed to be a possible solution. It is highly challenging to realize MOF nanobubbles with monocrystalline frameworks. By a spatially controlled etching approach, here, we can achieve the synthesis of zeolitic imidazolate framework (ZIF-8) nanobubbles with a uniform size of less than 100 nm. Interestingly, the ZIF-8 nanobubbles possess a monocrystalline nanoshell with a thickness of around 10 nm. Under optimal pyrolytic conditions, the ZIF-8 nanobubbles can be converted into hollow carbon nanobubbles while keeping their original shapes. The structure of the nanobubble enhances the fast Na(+)/K(+) ion intercalation performance. Such remarkable improvement cannot be realized by conventional MOFs or their derived carbons.

  9. Negative refraction at deep-ultraviolet frequency in monocrystalline graphite

    OpenAIRE

    Sun, Jingbo; Zhou, Ji; Kang, Lei; Wang, Rui; Meng, Xianguo; Li, Bo; Kang, Feiyu; Li, Longtu

    2010-01-01

    Negative refraction is such a prominent electromagnetic phenomenon that most researchers believe it can only occur in artificially engineered metamaterials. In this article, we report negative refraction for all incident angles for the first time in a naturally existing material. Using ellipsometry measurement of the equifrequency contour in the deep-ultraviolet frequency region (typically 254 nm), obvious negative refraction was demonstrated in monocrystalline graphite for incident angles ra...

  10. NANOSCALE CUTTING OF MONOCRYSTALLINE SILICON USING MOLECULAR DYNAMICS SIMULATION

    Institute of Scientific and Technical Information of China (English)

    LI Xiaoping; CAI Minbo; RAHMAN Mustafizur

    2007-01-01

    It has been found that the brittle material, monocrystalline silicon, can be machined in ductile mode in nanoscale cutting when the tool cutting edge radius is reduced to nanoscale and the undeformed chip thickness is smaller than the tool edge radius. In order to better understand the mechanism of ductile mode cutting of silicon, the molecular dynamics (MD) method is employed to simulate the nanoscale cutting of monocrystalline silicon. The simulated variation of the cutting forces with the tool cutting edge radius is compared with the cutting force results from experimental cutting tests and they show a good agreement. The results also indicate that there is silicon phase transformation from monocrystalline to amorphous in the chip formation zone that can be used to explain the cause of ductile mode cutting. Moreover, from the simulated stress results, the two necessary conditions of ductile mode cutting, the tool cutting edge radius are reduced to nanoscale and the undeformed chip thickness should be smaller than the tool cutting edge radius, have been explained.

  11. The Effects of Cells Temperature Increment and Variations of Irradiation for Monocrystalline Photovoltaic

    Science.gov (United States)

    Fuad Rahman Soeharto, Faishal; Hermawan

    2017-04-01

    Photovoltaic cell technology has been developed to meet the target of 17% Renewable Energy in 2025 accordance with Indonesia Government Regulation No. 5 2006. Photovoltaic cells are made of semiconductor materials, namely silicon or germanium (p-n junction). These cells need the light that comes from solar irradiation which brings energy photons to convert light energy into electrical energy. It is different from the solar heater that requires heat energy or thermal of sunlight that is normally used for drying or heating water. Photovoltaic cells requires energy photons to perform the energy conversion process, the photon energy can be derived from sunlight. Energy photon is taken from the sun light along with the advent of heat due to black-body radiation, which can lead to temperature increments of photovoltaic cells. Increment of 1°C can decreased photovoltaic cell voltage of up to 2.3 mV per cell. In this research, it will be discuss the analysis of the effect of rising temperatures and variations of irradiation on the type monocrystalline photovoltaic. Those variation are analyzed, simulated and experiment by using a module of experiment. The test results show that increment temperature from 25° C to 80° C at cell of photovoltaic decrease the output voltage of the photovoltaic cell at 4.21 V, and it also affect the power output of the cell which decreases up to 0.7523 Watt. In addition, the bigger the value of irradiation received by cell at amount of 1000 W / m2, produce more output power cells at the same temperature.

  12. Hybrid Co-deposition of Mixed-Valent Molybdenum-Germanium Oxides (MoxGeyOz): A Route to Tunable Optical Transmission (Postprint)

    Science.gov (United States)

    2015-08-05

    ultraviolet– visible -near-infrared optical spectrophotometry ( UV –Vis–NIR). Structural properties of the as-deposited MoxGeyOz films, including roughness...photoelectron spectroscopy . 15. SUBJECT TERMS Magnetron sputtering, Ellipsometry, X-ray photoelectron spectroscopy , Mixed oxides, Germanium oxide...photoelectron spectroscopy Mixed oxides Germanium oxide Molybdenum oxide Thin film Optical characterizationMixed-valent oxides of molybdenum and germanium

  13. Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    Somenath Chatterjee

    2014-01-01

    Full Text Available Multijunction solar cells designed from silicon (Si-germanium (Ge alloy based semiconductor materials exhibit high theoretical efficiencies (19.6% compared to the single junction one. The modeling calculations for all solar cells are done by AMPS 1D simulator. The structure of multi-junction i-layer is designed using heterolayers, starting from pure crystalline Si and increase of Ge mole fraction by 25% until pure Ge layer is reached. The top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s and be absorbed by the layer below, which increases the overall efficiency of the solar cell. Material parameters required to model the absorber layers are calculated and incorporated in the AMPS 1D simulator for optimizing of solar cell parameter values. Simulation results show that considerable efficiency enhancement can be obtained from the addition of the multi-junction layer.

  14. On the texturization of monocrystalline silicon with sodium carbonate solutions

    Energy Technology Data Exchange (ETDEWEB)

    Vallejo, B.; Gonzalez-Manas, M.; Martinez-Lopez, J.; Caballero, M.A. [Departamento de Cristalografia, Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real (Spain)

    2007-05-15

    The texturization of monocrystalline silicon wafers using sodium carbonate solution has been investigated. This etching process has been evaluated in terms of the surface morphology and the reflectance value. The results show that for low concentration of sodium carbonate the increase of texturing time decreases the reflectance value because of the change in morphology from hillocks to pyramidal; on the contrary for intermediate and high concentrations the increase of time has a detrimental effect on texturization because it increases both the pyramid sizes and their non-uniform distribution. However, a good cell performance could be obtained by etching at high concentrations and short times. (author)

  15. Influence of germane concentration to the microstructure and optoelectronic properties of mixed phase silicon-germanium films%锗烷浓度对非晶/微晶相变区硅锗薄膜结构及光电特性的影响

    Institute of Scientific and Technical Information of China (English)

    范闪闪; 路雪; 牛纪伟; 于威; 傅广生

    2017-01-01

    Several series of silicon-germanium alloy films were prepared by very high frequency plasma enhanced chemical vapor deposition with various germane concentrations.The influence of germane concentration on the microstructure and optoelectronic properties of silicon-germanium alloy films at transition and transition edge regime was studied.It was found that Ge suppressed the growth of crystalline silicon and the transition from microcrystalline to amorphous took place with the increase of germane concentration.The silicon-germanium alloy films at transition regime were rich silicon alloys,of which the microstructures were nanocrystalline silicon embedded in the amorphous silicon-germanium alloy matrix.The optical gap Eoo decreased,but structure factor F,as a means of quantifying the amount of microstructure,lessened at first,then went up with increasing of germane concentration.The silicon-germanium alloy fdm on the transition edge was most compact,of which the photosensitivity approached 104,which was suitable for the intrinsic layer of tandem solar cell when germane concentration was 9%.%采用甚高频等离子体增强化学气相沉积技术,制备了一系列从非晶到微晶相变区硅锗合金薄膜,研究了锗烷浓度对相变区及相变边缘硅锗薄膜微观结构和光电特性的影响.结果表明,锗烷的加入抑制了晶态硅的生长,使硅锗合金薄膜发生从晶态到非晶结构的转变.相变区硅锗薄膜为富硅合金薄膜,表现为纳米硅晶粒镶嵌于非晶硅锗网络的微观结构.随着锗烷浓度增加,合金薄膜光学带隙Eopt逐渐减小,表征薄膜结构有序性的结构因子F,呈先减小后增加趋势.当锗烷浓度为9%时,硅锗合金薄膜处在非晶/微晶相变边缘,薄膜具有较高的致密性,光敏性接近104,适用于叠层薄膜太阳能电池器件吸光层应用.

  16. Germanium geochemistry and mineralogy

    Science.gov (United States)

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  17. Temperature dependence of continuum and time resolved photoluminescence of germanium nanostructures

    Directory of Open Access Journals (Sweden)

    M Ardyanian

    2011-12-01

    Full Text Available   Germanium nanostructures were generated in the post annealed germanium oxide thin films. Visible and near infrared photoluminescence bands were observed in the samples annealed at 350°C and 400°C, respectively. These different luminescence ranges are attributed to the presence of the defects in oxide matrix and quantum confinement effect in the germanium nanostructures, respectively. Decay time and temperature dependence of the luminescence for different bands were investigated, which confirmed our idea about the origin of the luminescence.

  18. Mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus

    Science.gov (United States)

    Cao, Pinqiang; Wu, Jianyang; Zhang, Zhisen; Ning, Fulong

    2017-01-01

    The mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus (MBP) are systematically investigated using classic molecular dynamic simulations. For monocrystalline MBP, it is found that the shear strain rate, sample dimensions, temperature, atomic vacancies and applied statistical ensemble affect the shear behaviour. The wrinkled morphology is closely connected with the direction of the in-plane shear, dimensions of the samples, and applied ensembles. Particularly, small samples subjected to loading/unloading of the shear deformation along the armchair direction demonstrate a clear mechanical hysteresis loop. For polycrystalline MBP, the maximum shear stress as a function of the average grain size follows an inverse pseudo Hall-Petch type relationship under an isothermal-isobaric (NPT) ensemble, whereas under a canonical (NVT) ensemble, the maximum shear stress of polycrystalline MBP exhibits a ‘flipped’ behaviour. Furthermore, polycrystalline MBP subjected to uniaxial tension also exhibits a strongly grain size-dependent mechanical response, and it can fail by brittle intergranular and transgranular fractures because of its weaker grain boundary structures and the direction-dependent edge energy, respectively. These findings provide useful insight into the mechanical design of BP for nanoelectronic devices.

  19. High frequency guided wave propagation in monocrystalline silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2017-04-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

  20. Hafnium germanium telluride

    Science.gov (United States)

    Jang, Gyung-Joo; Yun, Hoseop

    2008-01-01

    The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetra­hedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. PMID:21202163

  1. Hafnium germanium telluride

    Directory of Open Access Journals (Sweden)

    Hoseop Yun

    2008-05-01

    Full Text Available The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps.

  2. Ultrasmooth, Highly Spherical Monocrystalline Gold Particles for Precision Plasmonics

    KAUST Repository

    Lee, You-Jin

    2013-12-23

    Ultrasmooth, highly spherical monocrystalline gold particles were prepared by a cyclic process of slow growth followed by slow chemical etching, which selectively removes edges and vertices. The etching process effectively makes the surface tension isotropic, so that spheres are favored under quasi-static conditions. It is scalable up to particle sizes of 200 nm or more. The resulting spherical crystals display uniform scattering spectra and consistent optical coupling at small separations, even showing Fano-like resonances in small clusters. The high monodispersity of the particles we demonstrate should facilitate the self-assembly of nanoparticle clusters with uniform optical resonances, which could in turn be used to fabricate optical metafluids. Narrow size distributions are required to control not only the spectral features but also the morphology and yield of clusters in certain assembly schemes. © 2013 American Chemical Society.

  3. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  4. Monocrystalline silicon used for integrated circuits: still on the way

    Institute of Scientific and Technical Information of China (English)

    Jia-he CHEN; De-ren YANG; Duan-lin QUE

    2008-01-01

    With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impur-ities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insu-lator) are reviewed. It is proposed that the silicon man-ufacturing infrastructure could still meet the increasingly stringent requirements arising from ULSI circuits and will expand Moore's law into a couple of decades.

  5. Status report on the International Germanium Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Brodzinski, R.L.; Avignone, F.T.; Collar, J.I.; Courant, H.; Garcia, E.; Guerard, C.K.; Hensley, W.K.; Kirpichnikov, I.V.; Miley, H.S.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Osetrov, S.B.; Pogosov, V.S.; Pomansky, A.A.; Puimedon, J.; Reeves, J.H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M.L.; Smolnikov, A.A.; Starostin, A.S.; Tamanyan, A.G.; Vasiliev, S.I.; Villar, J.A. (Pacific Northwest Lab., Richland, WA (United States) Univ. of South Carolina, Columbia, SC (United States) Univ. of Minnesota, Minneapolis, MN (United States) Univ. of Zaragoza (Spain) Inst. for Theoretical and Experimental Physics, Moscow (Russian Federation) Inst. for Nuclear Research, Baksan Neutrino Observatory (Russian Federation) Yerevan Physical Inst., Yerevan (Armenia))

    1993-04-01

    Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic [sup 7]Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported. (orig.)

  6. Status report on the International Germanium Experiment

    Science.gov (United States)

    Brodzinski, R. L.; Avignone, F. T.; Collar, J. I.; Courant, H.; García, E.; Guerard, C. K.; Hensley, W. K.; Kirpichnikov, I. V.; Miley, H. S.; Morales, A.; Morales, J.; Núñez-Lagos, R.; Osetrov, S. B.; Pogosov, V. S.; Pomansky, A. A.; Puimedón, J.; Reeves, J. H.; Ruddick, K.; Sáenz, C.; Salinas, A.; Sarsa, M. L.; Smolnikov, A. A.; Starostin, A. S.; Tamanyan, A. G.; Vasiliev, S. I.; Villar, J. A.

    1993-04-01

    Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic 7Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported.

  7. The Germanium Dichotomy in Martian Meteorites

    Science.gov (United States)

    Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

    2016-01-01

    Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

  8. Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance

    Science.gov (United States)

    Lu, Chun-Ti; Huang, Yu-Shiang; Liu, C. W.

    2016-06-01

    Al2O3/TiO2 stack layers deposited by the plasma-enhanced atomic layer deposition enhance photoluminescence intensity by reducing effective surface recombination velocities on both n-type and p-type monocrystalline Si. The field effect of negative oxide charges in the dielectrics is responsible for the low effective surface recombination velocity. The dependence of the effective surface recombination velocity on the photoluminescence intensity is investigated by the 2D numerical simulation. The bilayer stacks without texture also reduce the AM1.5-weighted front side reflectance to 11.8%. The field-effect passivation of Al2O3/TiO2 films is further improved by a forming gas annealing due to the additional increase of the negative oxide charge density.

  9. Development of brazing foils to join monocrystalline tungsten alloys with ODS-EUROFER steel

    Energy Technology Data Exchange (ETDEWEB)

    Kalin, B.A. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation)]. E-mail: BAKalin@mephi.ru; Fedotov, V.T. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Sevrjukov, O.N. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Kalashnikov, A.N. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Suchkov, A.N. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Moeslang, A. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, 76021 Karlsruhe (Germany); Rohde, M. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, 76021 Karlsruhe (Germany)

    2007-08-01

    Results on rapidly solidified filler metals for brazing W with W and monocrystalline W with EUROFER steel (FS) are presented. Rapidly quenched powder-type filler metals based on Ti{sub bal}-V-Cr-Be were developed to braze polycrystalline W with monocrystalline W. In addition, Fe{sub bal}-Ta-Ge-Si-B-Pd alloys were developed to braze monocrystalline W with FS for helium gas cooled divertors and plasma-facing components. The W to FS brazed joints were fabricated under vacuum at 1150 {sup o}C, using a Ta spacer of 0.1 mm in thickness to account for the different thermal expansions. The monocrystalline tungsten as well as the related brazed joints withstood 30 cycles between 750 {sup o}C/20 min and air cooling/3-5 min.

  10. Combined Ultrasonic Elliptical Vibration and Chemical Mechanical Polishing of Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Liu Defu

    2016-01-01

    Full Text Available An ultrasonic elliptical vibration assisted chemical mechanical polishing(UEV-CMP is employed to achieve high material removal rate and high surface quality in the finishing of hard and brittle materials such as monocrystalline silicon, which combines the functions of conventional CMP and ultrasonic machining. In theultrasonic elliptical vibration aided chemical mechanical polishingexperimental setup developed by ourselves, the workpiece attached at the end of horn can vibrate simultaneously in both horizontal and vertical directions. Polishing experiments are carried out involving monocrystalline silicon to confirm the performance of the proposed UEV-CMP. The experimental results reveal that the ultrasonic elliptical vibration can increase significantly the material removal rate and reduce dramatically the surface roughness of monocrystalline silicon. It is found that the removal rate of monocrystalline silicon polished by UEV-CMP is increased by approximately 110% relative to that of conventional CMP because a passive layer on the monocrystalline silicon surface, formed by the chemical action of the polishing slurry, will be removed not only by the mechanical action of CMP but also by ultrasonic vibration action. It indicates that the high efficiency and high quality CMP of monocrystalline silicon can be performed with the proposed UEV-CMP technique.

  11. Hydrogen Bonding in Hydrogenated Amorphous Germanium

    Institute of Scientific and Technical Information of China (English)

    M.S.Abo-Ghazala; S. Al Hazmy

    2004-01-01

    Thin films of hydrogenated amorphous germanium (a-Ge:H) were prepared by radio frequency glow discharge deposition at various substrate temperatures. The hydrogen distribution and bonding structure in a-Ge:H were discussed based on infrared absorption data. The correlation between infrared absorption spectra and hydrogen effusion measurements was used to determine the proportionality constant for each vibration mode of the Ge-H bonds. The results reveal that the bending mode appearing at 835 cm?1 is associated with the Ge-H2 (dihydride) groups on the internal surfaces of voids. While 1880 cm?1 is assigned to vibrations of Ge-H (monohydride) groups in the bulk, the 2000 cm?1 stretching mode is attributed to Ge-H and Ge-H2 bonds located on the surfaces of voids. For films associated with bending modes in the infrared spectra, the proportionality constant values of the stretching modes near 1880 and 2000 cm?1 are found to be lower than those of films which had no corresponding bending modes.

  12. Surface Damage Mechanism of Monocrystalline Si Under Mechanical Loading

    Science.gov (United States)

    Zhao, Qingliang; Zhang, Quanli; To, Suet; Guo, Bing

    2017-03-01

    Single-point diamond scratching and nanoindentation on monocrystalline silicon wafer were performed to investigate the surface damage mechanism of Si under the contact loading. The results showed that three typical stages of material removal appeared during dynamic scratching, and a chemical reaction of Si with the diamond indenter and oxygen occurred under the high temperature. In addition, the Raman spectra of the various points in the scratching groove indicated that the Si-I to β-Sn structure (Si-II) and the following β-Sn structure (Si-II) to amorphous Si transformation appeared under the rapid loading/unloading condition of the diamond grit, and the volume change induced by the phase transformation resulted in a critical depth (ductile-brittle transition) of cut (˜60 nm ± 15 nm) much lower than the theoretical calculated results (˜387 nm). Moreover, it also led to abnormal load-displacement curves in the nanoindentation tests, resulting in the appearance of elbow and pop-out effects (˜270 nm at 20 s, 50 mN), which were highly dependent on the loading/unloading conditions. In summary, phase transformation of Si promoted surface deformation and fracture under both static and dynamic mechanical loading.

  13. characterization of nanocrystalline silicon germanium film and ...

    African Journals Online (AJOL)

    a

    simulation the methods at different temperatures. ..... began to increase in low temperatures, which the total energy is stable in LD method and .... 21. van Gunsteren, W.F.; Berendsen, H.J.C.; Rullmann, J.A.C. Molecular Physics 1981, 44, 69.

  14. A Power Case Study for Monocrystalline and Polycrystalline Solar Panels in Bursa City, Turkey

    Directory of Open Access Journals (Sweden)

    Ayşegül Taşçıoğlu

    2016-01-01

    Full Text Available It was intended to reveal the time dependent power generation under different loads for two different solar panels under the conditions of Bursa province in between August 19 and 25, 2014. The testing sets include solar panels, inverter, multimeter, accumulator, regulator, pyranometer, pyrheliometer, temperature sensor, and datalogger. The efficiency of monocrystalline and polycrystalline solar panels was calculated depending on the climatic data’s measurements. As the result of the study, the average performances of monocrystalline and polycrystalline panels are 42.06 and 39.80 Wh, respectively. It was seen that 87.14 W instantaneous power could be obtained from monocrystalline solar panel and that 80.17 W instantaneous power could be obtained from polycrystalline solar panel under maximum total radiation (1001.13 W/m2. Within this frame, it was determined that monocrystalline solar panel is able to operate more efficiently under the conditions of Bursa compared to polycrystalline solar panel. When the multivariate correlations coefficients were examined statistically, a significant relationship in positive direction was detected between total and direct radiation and ambient temperature on energy generation from monocrystalline and polycrystalline panel.

  15. Study on the local atomic structure of germanium in organic germanium compounds by EXAFS

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate,were determined by EXAFS.The structure parameters including coordination numbers and bond lengths were reported,and possible structure patterns were discussed.

  16. A simple method to control nanotribology behaviors of monocrystalline silicon

    Science.gov (United States)

    Wang, X. D.; Guo, J.; Chen, C.; Chen, L.; Qian, L. M.

    2016-01-01

    A simple method was proposed to control the nanotribology behaviors of monocrystalline silicon against SiO2 microsphere by adjusting relative humidity (RH). Experimental results indicated that adhesion work, friction coefficient, and nanowear of silicon against SiO2 microsphere significantly varied between 60% and 90% RH. Under 60% RH, adhesion work was 119 mN/m, and friction coefficient was about 0.53. However, adhesion work and friction coefficient decreased to ˜70 mN/m and ˜0.3 under 90% RH, respectively. An apparent wear track ˜13 nm deep formed on the silicon surface under 60% RH, whereas no obvious wear scar was observed on the silicon surface under 90% RH. Analysis indicated that such tribological behaviors were due to different water condensations on the silicon surface under 60% and 90% RH. Under 60% RH, the water that condensed on the surfaces of the silicon sample and SiO2 tip mainly consisted of ice-like water. As a result, adhesion work was enlarged by the breaking force of the ice-like water bridge in the contact area. Given that a ≡Si-O-Si≡ bonding bridge easily formed between the silicon surface and the SiO2 tip with the help of water condensation under 60% RH instead of 90% RH, the friction coefficient was large and the nanowear of the silicon sample was severe under 60% RH. These results may help elucidate the nanotribology behaviors of silicon and facilitate the tribological design of dynamic microelectromechanical systems working under humid conditions.

  17. Harmonic Lattice Dynamics of Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Nelin, G.

    1974-07-01

    The phonon dispersion relations of the DELTA-, LAMBDA-, and SIGMA-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field.

  18. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  19. Hydrothermal synthesis of bismuth germanium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  20. Structural Design Parameters for Germanium

    Science.gov (United States)

    Salem, Jon; Rogers, Richard; Baker, Eric

    2017-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A* 1.7), it is not as anisotropic as SiC, NiAl, or Cu. Thus the fracture toughness was similar on the 100, 110, and 111 planes, however, measurements associated with randomly oriented grinding cracks were 6 to 30 higher. Crack extension in ring loaded disks occurred on the 111 planes due to both the lower fracture energy and the higher stresses on stiff 111 planes. Germanium exhibits a Weibull scale effect, but does not exhibit significant slow crack growth in distilled water. (n 100), implying that design for quasi static loading can be performed with scaled strength statistics. Practical values for engineering design are a fracture toughness of 0.69 0.02 MPam (megapascals per square root meter) and a Weibull modulus of m 6 2. For well ground and reasonable handled coupons, average fracture strength should be greater than 40 megapascals. Aggregate, polycrystalline elastic constants are Epoly 131 gigapascals, vpoly 0.22.

  1. Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Enyu Wang

    2016-01-01

    Full Text Available At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

  2. A study on the key factors affecting the electronic properties of monocrystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; CHEN Yong-min; LI Li; LI Fei; ZHAO Bao-xing

    2009-01-01

    The model of monocrystalline silicon solar cells is established, and the effects of wafer parameters, such as the p-Si (100) substrate thickness, the defect density, and the doping concentration, on the electronic properties of monocrystalline silicon solar cells are analyzed. The results indicate that the solar cells with an A1 back-surface-field will have good electronic properties when the wafers meet the following three conditions: (i) the defect density is less than 1.0×1011 cm-3; (ii) the substrate thickness is in the range of 100 μm to 200 μm.

  3. Properties Of Gallium-doped Hydrogenated Amorphous Germanium

    OpenAIRE

    1995-01-01

    The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H) on its dark-conductivity, band-gap, electronic density of states and the hydrogen bonding, were studied in detail by dark-conductivity, optical and infrared-transmission, and photothermal- deflection-spectroscopy measurements. Films of a-Ge:H having relative Ga atomic concentrations ranging between 3×10-5 and 1×10-2 were deposited by the cosputtering of solid Ge and Ga targets in a rf-plasma s...

  4. Laser synthesis of germanium tin alloys on virtual germanium

    Science.gov (United States)

    Stefanov, S.; Conde, J. C.; Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B.; Mantl, S.; Chiussi, S.

    2012-03-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix.

  5. Copper, Aluminum and Nickel: A New Monocrystalline Orthodontic Alloy

    Science.gov (United States)

    Wierenga, Mark

    Introduction: This study was designed to evaluate, via tensile and bend testing, the mechanical properties of a newly-developed monocrystalline orthodontic archwire comprised of a blend of copper, aluminum, and nickel (CuAlNi). Methods: The sample was comprised of three shape memory alloys; CuAlNi, copper nickel titanium (CuNiTi), and nickel titanium (NiTi); from various orthodontic manufacturers in both 0.018" round and 0.019" x 0.025" rectangular dimensions. Additional data was gathered for similarly sized stainless steel and beta-titanium archwires as a point of reference for drawing conclusions about the relative properties of the archwires. Measurements of loading and unloading forces were recorded in both tension and deflection testing. Repeated-measure ANOVA (alpha= 0.05) was used to compare loading and unloading forces across wires and one-way ANOVA (alpha= 0.05) was used to compare elastic moduli and hysteresis. To identify significant differences, Tukey post-hoc comparisons were performed. Results: The modulus of elasticity, deflection forces, and hysteresis profiles of CuAlNi were significantly different than the other superelastic wires tested. In all tests, CuAlNi had a statistically significant lower modulus of elasticity compared to the CuNiTi and NiTi wires (P <0.0001). The CuAlNi wire exhibited significantly lower loading and unloading forces than any other wire tested. In round wire tensile tests, loading force at all deflections was significantly lower for CuAlNi than CuNiTi or NiTi (P <0.0001). In tensile testing, the CuAlNi alloy was able to recover from a 7 mm extension (10% elongation) without permanent deformation and with little to no loss in force output. In large-deflection bend tests at 4, 5, and 6 mm deflection, CuAlNi showed the significantly lowest loading forces across the three wire materials (P <0.0001). The NiTi wires showed up to 12 times the amount of energy loss due to hysteresis compared to CuAlNi. CuAlNi showed a hysteresis

  6. Growth by atomic layer epitaxy and characterization of thin films of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Kopalko, K.; Lusakowska, E.; Paszkowicz, W.; Domagala, J.Z.; Szczerbakow, A.; Swiatek, K.; Dybko, K. [Institute of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Wojcik, A.; Godlewski, M. [Institute of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Dep. of Mathem. and Natural Sci. College of Science, Cardinal S. Wyszynski Univ., Warsaw (Poland); Godlewski, M.M. [Dept. of Physiology, Biochem., Pharmacology and Toxicology, Fac. of Veterinary Medicine, Warsaw Agriculture University, Warsaw (Poland)

    2005-02-01

    ABSTRACT Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al{sub 2}O{sub 3} substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Germanium multiphase equation of state

    Science.gov (United States)

    Crockett, S. D.; De Lorenzi-Venneri, G.; Kress, J. D.; Rudin, S. P.

    2014-05-01

    A new SESAME multiphase germanium equation of state (EOS) has been developed utilizing the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element.

  8. Electrically active, doped monocrystalline silicon nanoparticles produced by hot wire thermal catalytic pyrolysis

    CSIR Research Space (South Africa)

    Scriba, MR

    2011-05-01

    Full Text Available Doped silicon nanoparticles have successfully been produced by hot wire thermal catalytic pyrolysis at 40 mbar and a filament temperature of 1800 °C, using a mixture of silane and diborane or phosphine. All particles are monocrystalline with shapes...

  9. Halide perovskite solar cells using monocrystalline TiO2 nanorod arrays as electron transport layers: impact of nanorod morphology

    Science.gov (United States)

    Thakur, Ujwal Kumar; Askar, Abdelrahman M.; Kisslinger, Ryan; Wiltshire, Benjamin D.; Kar, Piyush; Shankar, Karthik

    2017-07-01

    This is the first report of a 17.6% champion efficiency solar cell architecture comprising monocrystalline TiO2 nanorods (TNRs) coupled with perovskite, and formed using facile solution processing without non-routine surface conditioning. Vertically oriented TNR ensembles are desirable as electron transporting layers (ETLs) in halide perovskite solar cells (HPSCs) because of potential advantages such as vectorial electron percolation pathways to balance the longer hole diffusion lengths in certain halide perovskite semiconductors, ease of incorporating nanophotonic enhancements, and optimization between a high contact surface area for charge transfer (good) versus high interfacial recombination (bad). These advantages arise from the tunable morphology of hydrothermally grown rutile TNRs, which is a strong function of the growth conditions. Fluorescence lifetime imaging microscopy of the HPSCs demonstrated a stronger quenching of the perovskite PL when using TNRs as compared to mesoporous/compact TiO2 thin films. Due to increased interfacial contact area between the ETL and perovskite with easier pore filling, charge separation efficiency is dramatically enhanced. Additionally, solid-state impedance spectroscopy results strongly suggested the suppression of interfacial charge recombination between TNRs and perovskite layer, compared to other ETLs. The optimal ETL morphology in this study was found to consist of an array of TNRs ∼300 nm in length and ∼40 nm in width. This work highlights the potential of TNR ETLs to achieve high performance solution-processed HPSCs.

  10. Study of three dimensional germanium islands and ultrathin Si{sub x}Ge{sub 1-x} films grown by chemical vapour deposition on Si(111)-(7 x 7)

    Energy Technology Data Exchange (ETDEWEB)

    Gopalakrishnan, Selvi

    2005-07-15

    This work probed at the atomic level, processes that occur during the Ge three dimensional island formation and on ultrathin Si{sub x}Ge{sub 1-x} epitaxial growth by chemical vapour deposition on the Si(111)-(7 x 7) substrate with the aid of surface probe techniques such as STM and AFM, XPS, as well as TEM imaging of any 3D island formation. This work could essentially be divided into two parts. The first part studied the growth of the strained Ge on Si system with emphasis on the characterisation of the CVD grown three dimensional germanium islands on a standard Si(111)-(7 x 7) substrate as well as on a surface modified Si(111)-(7 x 7) substrate. The characterisation was carried out using a combination of techniques. XPS was used to calculate the effective coverages of deposited germanium, the STM was used to image the top most layers whenever possible and AFM, cross-sectional TEM and HRTEM to image the three dimensional islands. The possible causes of the surface modification were also examined. In the second part of this work the growth morphologies ultrathin Si{sub x}Ge{sub 1-x} layers grown on the Si(111)-(7 x 7) substrate at 750 K where the hydrogen desorption rate from the Si(111) surface is low and at 850 K which was the temperature at which the rate of hydrogen desorption from the Si(111) surface was a maximum were investigated. In addition modelling of ultrathin layer growth was carried out using two existing growth models. (orig.)

  11. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  12. Fe- and Cr-correlated defects in monocrystalline Si:Ga and electrical properties of multicrystalline Si:P; Fe- und Cr-korrelierte Defekte in einkristallinem Si:Ga und elektrische Eigenschaften von multikristallinem Si:P

    Energy Technology Data Exchange (ETDEWEB)

    Beljakowa, S.

    2005-12-05

    Presently silicon (Si)-based solar cells are in general made of boron (B)-doped material. An alternative to B-doped Si is the doping with gallium (Ga) or phosphorus (P). In the framework of this thesis, electrical (Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), resistivity topography) and optical (microwave-detected photoconductance decay ({mu}-PCD)) methods are applied to investigate the electrical properties of FeGa- and CrGa-pairs in monocrystalline Si and of P-doped EFG (edge defined film fed growth)-Si. (orig.)

  13. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  14. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Edward L; Edmondson, Bryce I; Hu, Shen; Ekerdt, John G

    2016-07-26

    Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2×1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

  15. Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Soil Pressure Mini-sensor Made of Monocrystalline Silicon and the Measurement of Its Sensitivity Coefficient

    Institute of Scientific and Technical Information of China (English)

    YU Xiao; SU Xiaoke

    2005-01-01

    A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device. The experimental result shows that the soil pressure min- sensor made of the monocrystalline silicon ( SPMMS ) is proved to be good linear, high precision and less discrete that can fetch precise data in low pressure range even near by 0 point, which guarantees the reliability of the soil pressure test in geotechnical engineering.

  17. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    OpenAIRE

    Chen Xiao; Jian Guo; Peng Zhang; Cheng Chen; Lei Chen; Linmao Qian

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was...

  18. Fabrication of high resolution and lightweight monocrystalline silicon x-ray mirrors

    Science.gov (United States)

    Riveros, Raul E.; Kolos, Linette D.; Mazzarella, James R.; McKeon, Kevin P.; Zhang, William W.

    2015-09-01

    Monocrystalline silicon as an x-ray mirror substrate material promises significant improvements over the x- ray mirror technologies used to date, since it is mechanically stiff, stress-free, highly thermally conductive, and widely commercially available. Producing highly accurate and lightweight x-ray mirrors from monocrystalline silicon requires a unique and specialized manufacturing process capable of producing mirrors quickly and cost effectively. The identification, development, and testing of this process is the focus of the work described in this proceeding. Monocrystalline silicon blocks were obtained, and a variety of processes (wire electro-discharge machining, etching, polishing) were applied to generate an accurate and stress-free cylindrical or Wolter-I mirror surface. The mirror surface is then sliced off at a thickness of mirror segment with mirror production process requires ~2 days to produce a mirror segment and is easily integrated into a cost-reducing parallel processing scheme. Presently, there is strong evidence that the mirror production process described in this paper will meet the stringent requirements of future x-ray missions.

  19. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K.W.; Wells, J.P.R.; Schropp, R.E.I.; Vinh, N.Q.; Dijkhuis, J.I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si–H and Ge–H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe:H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to th

  20. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K. W.; Wells, J. P. R.; Schropp, R. E. I.; Vinh, N. Q.; Dijkhuis, J. I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si-H and Ge-H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe: H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to t

  1. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    Science.gov (United States)

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.

  2. Germanium content in Polish hard coals

    Directory of Open Access Journals (Sweden)

    Makowska Dorota

    2016-01-01

    Full Text Available Due to the policy of the European Union, it is necessary to search for new sources of scarce raw materials. One of these materials is germanium, listed as a critical element. This semi-metal is widely used in the electronics industry, for example in the production of semiconductors, fibre optics and solar cells. Coal and fly ash from its combustion and gasification for a long time have been considered as a potential source of many critical elements, particularly germanium. The paper presents the results of germanium content determination in the Polish hard coal. 23 coal samples of various coal ranks were analysed. The samples were collected from 15 mines of the Upper Silesian Coal Basin and from one mine of the Lublin Coal Basin. The determination of germanium content was performed with the use of Atomic Absorption Spectrometry with Electrothermal Atomization (GFAAS. The investigation showed that germanium content in the analysed samples was at least twice lower than the average content of this element in the hard coals analysed so far and was in the range of 0.08 ÷ 1.28 mg/kg. Moreover, the content of Ge in the ashes from the studied coals does not exceed 15 mg/kg, which is lower than the average value of Ge content in the coal ashes. The highest content of this element characterizes coals of the Lublin Coal Basin and young coals type 31 from the Vistula region. The results indicate a low utility of the analysed coal ashes as a source of the recovery of germanium. On the basis of the analyses, the lack of the relationship between the content of the element and the ash content in the tested coals was noted. For coals of the Upper Silesian Coal Basin, the relationship between the content of germanium in the ashes and the depth of the seam was observed.

  3. Recovering germanium from coal ash by chlorination with ammonium chloride

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A new process of enriching germanium from coal ash was developed. The process involves in mixing the coal ash and ammonium chloride and then roasting the mixture to produce germanium chloride that is then absorbed by dilute hydrochloric acid and hydrolyzed to germanium oxide. The germanium recovery reached to 80.2% at the optimum condition: mass ratio of NH4Cl/coal ash is 0.15, roasting temperature 400℃ and roasting time 90 min.

  4. Germanium nanowires grown using different catalyst metals

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia, R.C., E-mail: riama@ifsp.edu.br [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Área de Ciências, Instituto Federal de Educação Ciência e Tecnologia de São Paulo, Rua Américo Ambrósio, 269, Jd. Canaã, Sertãozinho, CEP 14169-263 (Brazil); Kamimura, H.; Munhoz, R.; Rodrigues, A.D. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Leite, E.R. [Departamento de Química – LIEC, Universidade Federal de São Carlos, São Carlos, CEP 13565-905 (Brazil); Chiquito, A.J. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil)

    2016-11-01

    Germanium nanowires have been synthesized by the well known vapor-liquid-solid growth mechanism using gold, silver, cooper, indium and nickel as catalyst metals. The influence of metal seeds on nanowires structural and electronic transport properties was also investigated. Electron microscopy images demonstrated that, despite differences in diameters, all nanowires obtained presented single crystalline structures. X-ray patterns showed that all nanowires were composed by germanium with a small amount of germanium oxide, and the catalyst metal was restricted at the nanowires' tips. Raman spectroscopy evidenced the long range order in the crystalline structure of each sample. Electrical measurements indicated that variable range hopping was the dominant mechanism in carrier transport for all devices, with similar hopping distance, regardless the material used as catalyst. Then, in spite of the differences in synthesis temperatures and nanowires diameters, the catalyst metals have not affected the composition and crystalline quality of the germanium nanowires nor the carrier transport in the germanium nanowire network devices. - Highlights: • Ge nanowires were grown by VLS method using Au, Ag, Cu, In and Ni as catalysts. • All nanowires presented high single crystalline quality and long range order. • Devices showed semiconducting behavior having VRH as dominant transport mechanism. • The metal catalyst did not influence structural properties or the transport mechanism.

  5. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

    Science.gov (United States)

    Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

    2016-09-01

    We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

  6. Experimental investigation on oxidation kinetics of germanium by ozone

    Science.gov (United States)

    Wang, Xiaolei; Zhao, Zhiqian; Xiang, Jinjuan; Wang, Wenwu; Zhang, Jing; Zhao, Chao; Ye, Tianchun

    2016-12-01

    Oxidation kinetics of germanium surface by ozone at low temperature (≤400 °C) is experimentally investigated. The growth process contains two regions: initial linear growth region and following parabolic growth region. The GeOx thickness vs. oxidation time plot obeys the well-known Deal-Grove or linear parabolic model. The linear growth region contains reaction of oxygen atoms with surface bond and back bonds of outmost Ge layer. And the activation energy is experimentally estimated to be 0.06 eV. Such small activation energy indicates that the linear growth region is nearly barrier-less. The parabolic growth region starts when the oxygen atoms diffuse into back bonds of second outmost Ge layers. And the activation energy for this process is found to be 0.54 eV. Furthermore, in the ozone oxidation it is not O3 molecules but O radicals that go through the GeOx film.

  7. Front End Spectroscopy ASIC for Germanium Detectors

    Science.gov (United States)

    Wulf, Eric

    Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

  8. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    Science.gov (United States)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  9. Status report on the International Germanium Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Brodzinski, R.L.; Hensley, W.K.; Miley, H.S.; Reeves, J.H. [Pacific Northwest Lab., Richland, WA (United States); Avignone, F.T.; Collar, J.I.; Guerard, C.K. [South Carolina Univ., Columbia, SC (United States); Courant, H.; Ruddick, K. [Minnesota Univ., Minneapolis, MN (United States); Kirpichnikov, I.V.; Starostin, A.S. [AN SSSR, Moscow (Russian Federation). Inst. Teoreticheskoj i Eksperimental`noj Fiziki; Garcia, E.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Puimedon, J.; Saenz, C.; Salinas, A.; Sarasa, M.L.; Villar, J.A. [Zaragoza Univ. (Spain); Osetrov, S.B.; Pomansky, A.A.; Smolnikov, A.A.; Vasiliev, S.I. [AN SSSR, Moscow (Russian Federation). Inst. Yadernykh Issledovanij; Pogosov, V.S.; Tamanyan, A.G. [Erevanskij Fizicheskij Inst., Erevan (Armenia)

    1992-06-01

    Phase II detector fabrication for the International Germanium Experiment is awaiting resolution of technical details observed during Phase I. Measurements of fiducial volume, configuration of the tansistor-reset preamplifier stage, and sources of background are discussed. Cosmogenic {sup 7}Be is measured in germanium. Radium contamination in electroformed copper reported. The 2{nu} double- beta decay half-life of {sup 76}Ge measured with a Phase I detector is in reasonable agreement with previously reported values. No events are observed in the vicinity of the O{nu} double-beta decay energy.

  10. Neutron-transmutation-doped germanium bolometers

    Science.gov (United States)

    Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

    1983-01-01

    Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

  11. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Science.gov (United States)

    Tune, Daniel D.; Shapter, Joseph G.

    2013-01-01

    The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs) on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  12. Coupling of Nitrogen-Vacancy Centers to Photonic Crystal Cavities in Monocrystalline Diamond

    CERN Document Server

    Faraon, Andrei; Huang, Zhihong; Acosta, Victor M; Beausoleil, Raymond G

    2012-01-01

    The zero-phonon transition rate of a nitrogen-vacancy center is enhanced by a factor of ~70 by coupling to a photonic crystal resonator fabricated in monocrystalline diamond using standard semiconductor fabrication techniques. Photon correlation measurements on the spectrally filtered zero-phonon line show antibunching, a signature that the collected photoluminescence is emitted primarily by a single nitrogen-vacancy center. The linewidth of the coupled nitrogen-vacancy center and the spectral diffusion are characterized using high-resolution photoluminescence and photoluminescence excitation spectroscopy.

  13. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-12-01

    Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  14. Molecular Dynamics Simulation of Nanoindentation-induced Mechanical Deformation and Phase Transformation in Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2008-01-01

    Full Text Available AbstractThis work presents the molecular dynamics approach toward mechanical deformation and phase transformation mechanisms of monocrystalline Si(100 subjected to nanoindentation. We demonstrate phase distributions during loading and unloading stages of both spherical and Berkovich nanoindentations. By searching the presence of the fifth neighboring atom within a non-bonding length, Si-III and Si-XII have been successfully distinguished from Si-I. Crystallinity of this mixed-phase was further identified by radial distribution functions.

  15. Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

    Directory of Open Access Journals (Sweden)

    Иван Федорович Червоный

    2015-11-01

    Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

  16. Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

    Science.gov (United States)

    Perrin, Jérôme; Takeda, Yoshihiko; Hirano, Naoto; Matsuura, Hideharu; Matsuda, Akihisa

    1989-01-01

    We report a systematic investigation of the effect of ion bombardment during the growth of amorphous silicon-germanium alloy films from silane and germane rf-glow discharge. Independent control of the plasma and the ion flux and energy is obtained by using a triode configuration. The ion contribution to the total deposition rate can reach 20% on negatively biased substrates. Although the Si and Ge composition of the film does not depend on the ion flux and energy, the optical, structural and electronic properties are drastically modified at low deposition temperatures when the maximum ion energy increases up to 50 eV, and remain constant above 50 eV. For a Ge atomic concentration of 37% and a temperature of 135°C, the optical gap decreases from 1.67 to 1.45 eV. This is correlated with a modification of hydrogen bonding configurations. Silicon dihydride sites disappear and preferential attachment of hydrogen to silicon is reduced in favour of germanium. Moreover the photoconductivity increases which shows that ion bombardment is a key parameter to optimize the quality of low band gap amorphous silicon-germanium alloys.

  17. Interstitial oxygen in germanium and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Artacho, E.; Yndurain, F. [Instituto Nicolas Cabrera and Departamento de Fisica de la Materia Condensada, C-III Universidad Autonoma de Madrid, 28049 Madrid (Spain); Pajot, B. [Groupe de Physique des Solides (Unite Associee au CNRS), Tour 23, Universite Denis Diderot, 2 Place Jussieu, 75251 Paris Cedex 05 (France); Ramirez, R.; Herrero, C.P. [Instituto de Ciencia de Materiales, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Khirunenko, L.I. [Institute of Physics, National Academy of Sciences of Ukraine, Prospect Nauki 46, 252650 Kiev 22 (Ukraine); Itoh, K.M. [Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223 (Japan); Haller, E.E. [Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis. {copyright} {ital 1997} {ital The American Physical Society}

  18. Interstitial oxygen in germanium and silicon

    Science.gov (United States)

    Artacho, Emilio; Ynduráin, Félix; Pajot, Bernard; Ramírez, Rafael; Herrero, Carlos P.; Khirunenko, Ludmila I.; Itoh, Kohei M.; Haller, Eugene E.

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis.

  19. Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing Gao

    2015-09-01

    Full Text Available To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.

  20. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-01

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  1. Molecular Dynamics Simulation of the Crystal Orientation and Temperature Influences in the Hardness on Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Hongwei Zhao

    2014-01-01

    Full Text Available A nanoindentation simulation using molecular dynamic (MD method was carried out to investigate the hardness behavior of monocrystalline silicon with a spherical diamond indenter. In this study, Tersoff potential was used to model the interaction of silicon atoms in the specimen, and Morse potential was used to model the interaction between silicon atoms in the specimen and carbon atoms in the indenter. Simulation results indicate that the silicon in the indentation zone undergoes phase transformation from diamond cubic structure to body-centred tetragonal and amorphous structure upon loading of the diamond indenter. After the unloading of the indenter, the crystal lattice reconstructs, and the indented surface with a residual dimple forms due to unrecoverable plastic deformation. Comparison of the hardness of three different crystal surfaces of monocrystalline silicon shows that the (0 0 1 surface behaves the hardest, and the (1 1 1 surface behaves the softest. As for the influence of the indentation temperature, simulation results show that the silicon material softens and adhesiveness of silicon increases at higher indentation temperatures.

  2. Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

    Directory of Open Access Journals (Sweden)

    Abraham Dandoussou

    2015-01-01

    Full Text Available The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the I-V characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data recorded in 2014 in Ngaoundere, Cameroon. The results show that the ideality factor can be considered as constant and equal to 1.2 for the monocrystalline silicon module. The diode reverse saturation current depends only on the temperature. And the series resistance decreases when the irradiance increases. The extracted values of these parameters contribute to the best modeling of a photovoltaic module which can help in the accurate extraction of the maximum power.

  3. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-12-11

    In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

  4. Large three-dimensional photonic crystals based on monocrystalline liquid crystal blue phases.

    Science.gov (United States)

    Chen, Chun-Wei; Hou, Chien-Tsung; Li, Cheng-Chang; Jau, Hung-Chang; Wang, Chun-Ta; Hong, Ching-Lang; Guo, Duan-Yi; Wang, Cheng-Yu; Chiang, Sheng-Ping; Bunning, Timothy J; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2017-09-28

    Although there have been intense efforts to fabricate large three-dimensional photonic crystals in order to realize their full potential, the technologies developed so far are still beset with various material processing and cost issues. Conventional top-down fabrications are costly and time-consuming, whereas natural self-assembly and bottom-up fabrications often result in high defect density and limited dimensions. Here we report the fabrication of extraordinarily large monocrystalline photonic crystals by controlling the self-assembly processes which occur in unique phases of liquid crystals that exhibit three-dimensional photonic-crystalline properties called liquid-crystal blue phases. In particular, we have developed a gradient-temperature technique that enables three-dimensional photonic crystals to grow to lateral dimensions of ~1 cm (~30,000 of unit cells) and thickness of ~100 μm (~ 300 unit cells). These giant single crystals exhibit extraordinarily sharp photonic bandgaps with high reflectivity, long-range periodicity in all dimensions and well-defined lattice orientation.Conventional fabrication approaches for large-size three-dimensional photonic crystals are problematic. By properly controlling the self-assembly processes, the authors report the fabrication of monocrystalline blue phase liquid crystals that exhibit three-dimensional photonic-crystalline properties.

  5. Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-03-15

    One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    Science.gov (United States)

    Ghoneim, Mohamed T.; Fahad, Hossain M.; Hussain, Aftab M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Alfaraj, Nasir; Lizardo, Ernesto B.; Hussain, Muhammad M.

    2015-12-01

    In today's digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical "through silicon" micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

  7. Comparison of organic and inorganic germanium compounds in cellular radiosensitivity and preparation of germanium nanoparticles as a radiosensitizer.

    Science.gov (United States)

    Lin, Ming-Hsing; Hsu, Tzu-Sheng; Yang, Pei-Ming; Tsai, Meng-Yen; Perng, Tsong-Pyng; Lin, Lih-Yuan

    2009-03-01

    The aim of this work is to compare the radiosensitizing effect between organic and inorganic germanium compounds and to investigate whether nanometer-sized germanium particles can act as radiosensitizers. Bis (2-carboxyethylgermanium) sesquioxide (Ge-132), germanium oxide (GeO(2)) and germanium nanoparticles were used in this study. Cell viability was determined by clonogenic survival assay. Cellular DNA damage was evaluated by alkaline comet assay, confocal microscopy and the cellular level of phospho-histone H2AX (gamma-H2AX). Nanometer-sized germanium particles were fabricated. They have a similar radiosensitizing effect as that of GeO(2). Conversely, Ge-132 did not enhance the radiosensitivity of cells. Comet assay was employed to evaluate the level of DNA damage and confirmed that inorganic germanium compounds enhanced cellular radiosensitivity. Notably, the comet assay indicated that the nanoparticle itself caused a higher level of DNA damage. The possibility that germanium nanoparticles per se caused DNA damage was ruled out when the cellular level of gamma-H2AX was examined. We demonstrated that inorganic but not organic germanium compounds exerted radiosensitizing effect in cells. Nanometer-sized germanium particles were fabricated and were able to enhance the radiosensitivity of cells. Confounding effect may occur when comet assay is used to estimate the level of DNA damage in the presence of germanium nanoparticles.

  8. The International Germanium Experiment (IGEX) in 1993

    Energy Technology Data Exchange (ETDEWEB)

    Avignone, F.T. (University of South Carolina, Columbia, SC 29208 (United States)); Brodzinski, R.L. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA 99352 (United States)); Collar, J.I. (University of South Carolina, Columbia, SC 29208 (United States)); Courant, H. (University of Minnesota, Minneapolis, MN 55455 (United States)); Garcia, E. (University of Zaragoza, Zaragoza (Spain)); Guerard, C.K. (University of South Carolina, Columbia, SC 29208 (United States)); Hensley, W.K. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA 99352 (United States)); Kirpichnikov, I.V. (Institute for Theoretical and Experimental Physics, 117 259 Moscow (Russian Federation)); Klimenko, A.A. (Institute for Nuclear Research, Baksan Neutrino Observatory, 361 609 Neutrino (Russian Federation)); Morales, A. (University of Zaragoza, Zaragoza (Spain)); Morales, J. (University of Zaragoza, Zaragoza (Spain)); Miley, H.S. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA

    1994-05-01

    The data collected from the first set of three IGEX enriched germanium detectors have been analyzed. The best background obtained was less than 0.3counts/keV/kg/y near 2MeV, obtained in the Homestake gold mine in Lead, SD, USA. Data combined from all the detectors yield T[sub 1/2][sup 0][>=]qslant1.0x10[sup 24]y (90% CL). The first detector produced in the second phase of the experiment is a 2.15kg germanium crystal of 2.16keV FWHM at 1332keV. Several experiences with the first group of detectors have led to improvements in the mechanical design of the copper cryostat. Also, low background materials research done in the last two years has lowered the specific activity of the electroformed copper. The new detector is currently operating in the Homestake gold mine. ((orig.))

  9. The International Germanium Experiment (IGEX) in 1993

    Science.gov (United States)

    Avignone, F. T.; Brodzinski, R. L.; Collar, J. I.; Courant, H.; Garcia, E.; Guerard, C. K.; Hensley, W. K.; Kirpichnikov, I. V.; Klimenko, A. A.; Morales, A.; Morales, J.; Miley, H. S.; Nunez-Lagos, R.; Osetrov, S. B.; Pogosov, V. S.; Pomansky, A. A.; Puimedon, J.; Reeves, J. H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M. L.; Smolnikov, A. A.; Starostin, A. S.; Tamanyan, A. G.; Umatov, V. I.; Vasiliev, S. I.; Villar, J. A.

    1994-05-01

    The data collected from the first set of three IGEX enriched germanium detectors have been analyzed. The best background obtained was less than 0.3 counts/keV/kg/y near 2 MeV, obtained in the Homestake gold mine in Lead, SD, USA. Data combined from all the detectors yield T{1}/{2}0τ ≥ 1.0 × 10 24y (90% CL) . The first detector produced in the second phase of the experiment is a 2.15 kg germanium crystal of 2.16 keV FWHM at 1332 keV. Several experiences with the first group of detectors have led to improvements in the mechanical design of the copper cryostat. Also, low background materials research done in the last two years has lowered the specific activity of the electroformed copper. The new detector is currently operating in the Homestake gold mine.

  10. Spin transport in p-type germanium.

    Science.gov (United States)

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  11. Indium-carbon pairs in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Tessema, G; Vianden, R [Helmholtz Institut fuer Strahlen-und Kernphysik, Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

    2003-08-06

    The interactions of carbon with the probe nucleus {sup 111}In have been studied in germanium using the perturbed angular correlation method, which has the ability to detect the microscopic environments of the probe atom by means of the interaction of the nuclear moments of the probe with the surrounding electromagnetic fields. At high dose carbon implantation in germanium two complexes have been identified by their unique quadrupole interaction frequencies. An interaction frequency of {nu}{sub Q1} = 207(1) MHz ({eta} = 0.16(3)) appeared at annealing temperatures below 650 deg. C. Above 650 deg. C, it was replaced by a second interaction frequency of {nu}{sub Q2} 500(1) MHz ({eta} = 0). The frequencies are attributed to two different carbon-indium pairs. The orientation of the corresponding electric field gradients and the thermal stability of the defect complexes are studied.

  12. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  13. Smooth germanium nanowires prepared by a hydrothermal deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-11-15

    Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  14. Bottom-up assembly of metallic germanium.

    Science.gov (United States)

    Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

    2015-08-10

    Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

  15. Platinum germanium ordering in UPtGe

    Science.gov (United States)

    Hoffmann, Rolf-Dieter; Pöttgen, Rainer; Lander, Gerry H.; Rebizant, Jean

    2001-09-01

    The non-centrosymmetric structure of UPtGe was investigated by X-ray diffraction on both powders and single crystals: EuAuGe type, Imm2, a=432.86(5), b=718.81(8), c=751.66(9) pm, wR2=0.0738 for 399 F2 values and 22 variables. The platinum and germanium atoms form two-dimensional layers of puckered Pt 3Ge 3 hexagons with short PtGe intralayer distances of 252 and 253 pm. These condensed two-dimensionally infinite nets are interconnected to each other via weak PtPt contacts with bond distances of 300 pm. The two crystallographically independent uranium atoms are situated above and below the six-membered platinum-germanium rings. The U1 atoms have six closer germanium neighbors while the U2 atoms have six closer platinum neighbors. The group-subgroup relation with the KHg 2 type structure is presented.

  16. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Li-Wei; Chang, Chun-Yen [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Tu, Chun-Hao; Wang, Pai-Syuan [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Lin, Chao-Cheng [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, 310, Taiwan (China); Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin [Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Ching [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Cheng [Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 310, Taiwan (China)

    2011-11-30

    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 Degree-Sign C, and separated well at 600 Degree-Sign C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 Degree-Sign C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 Degree-Sign C annealing. The electrical characteristics of data retention in the sample with the 600 Degree-Sign C annealing exhibited better performance than the 500 Degree-Sign C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

  17. Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

    Science.gov (United States)

    Fiegl, G. F.; Bonora, A. C.

    1980-01-01

    The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

  18. Numerical analysis of monocrystalline silicon solar cells with fine nanoimprinted textured surface

    Science.gov (United States)

    Yoshinaga, Seiya; Ishikawa, Yasuaki; Araki, Shinji; Honda, Tatsuki; Jiang, Yunjiang; Uraoka, Yukiharu

    2017-02-01

    We investigated the surface reflectance of nanoimprinted textures on silicon. Zirconium oxide, which is a wide-bandgap inorganic dielectric material, was used as the texturing material. We performed several calculations to optimize the textures for the production of high-efficiency bulk-type monocrystalline silicon solar cells. Our analysis revealed that nanoimprinted textured solar cells exhibit a lower reverse saturation current density than a solar cell with a conventional etched texture. It was also confirmed that the photocarrier generation rate for a solar cell with a submicron-scale nanoimprinted texture has little dependence on the texture shape. Furthermore, the weighted average reflectance of an optimized nanoimprinted textured solar cell was substantially reduced to 3.72%, suggesting that texture formation by nanoimprint lithography is an extremely effective technology for producing high-efficiency solar cells at a low cost.

  19. Impact of temperature on performance of series and parallel connected mono-crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2015-11-01

    Full Text Available This paper presents a study on impact of temperature on the performance of series and parallel connected mono-crystalline silicon (mono-Si solar cell employing solar simulator. The experiment was carried out at constant light intensity 550 W/m2with cell temperature in the range 25–60 oC for single, series and parallel connected mono-Si solar cells. The performance parameters like open circuit voltage, maximum power, fill factor and efficiency are found to decrease with cell temperature while the short circuit current is observed to increase. The experimental results reveal that silicon solar cells connected in series and parallel combinations follow the Kirchhoff’s laws and the temperature has a significant effect on the performance parameters of solar cell.

  20. Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

    Science.gov (United States)

    Fiegl, G. F.; Bonora, A. C.

    1980-01-01

    The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

  1. Energy-resolved hot carrier relaxation dynamics in monocrystalline plasmonic nanoantennas

    CERN Document Server

    Méjard, Régis; Petit, Marlène; Bouhelier, Alexandre; Cluzel, Benoît; Demichel, Olivier

    2016-01-01

    Hot carriers are energetic photo-excited carriers driving a large range of chemico-physical mechanisms. At the nanoscale, an efficient generation of these carriers is facilitated by illuminating plasmonic antennas. However, the ultrafast relaxation rate severally impedes their deployment in future hot-carrier based devices. In this paper, we report on the picosecond relaxation dynamics of hot carriers in plasmonic monocrystalline gold nanoantennas. The temporal dynamics of the hot carriers is experimentally investigated by interrogating the nonlinear photoluminescence response of the antenna with a spectrally-resolved two-pulse correlation configuration. We measure time-dependent nonlinearity orders varying from 1 to 8, which challenge the common interpretation of multi-photon gold luminescence. We demonstrate that the relaxation of the photo-excited carriers depends of their energies relative to the Fermi level. We find a 60 % variation in the relaxation rate for electron-hole pair energies ranging from c.a....

  2. Experiments towards size and dopant control of germanium quantum dots for solar applications

    OpenAIRE

    2015-01-01

    While the literature for the doping of silicon quantum dots (QDs) and nanocrystals (NCs) is extensive, reports of doping their germanium analogs are sparse. We report a range of attempts to dope Ge QDs both during and post-synthesis. The QDs have been characterized by TEM, XPS, and I/V measurements of SiO2 coated QD thin films in test cells using doped Si substrates. The solution synthesis of Ge QDs by the reduction of GeCl4 with LiAlH4 results in Ge QDs with a low level of chlorine atoms on ...

  3. The microstructure evolution of hydrogenated microcrystalline germanium promoted by power gradient method

    Science.gov (United States)

    Wang, Xinyu; Ni, Jian; Li, Chang; Sun, Xiaoxiang; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2016-12-01

    This paper studies the microstructure evolution of hydrogenated microcrystalline germanium (μc-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD). There is an amorphous incubation layer formed in the initial deposition stage of μc-Ge:H thin film. It is demonstrated that the thickness of incubation layer can be reduced by high hydrogen dilution and high discharge power method. However, at high hydrogen dilution, the deposition rate of μc-Ge:H appears a sharply decrease. Using a high discharge power can compensate the deposition rate decrease but lead to decrease of average grain size and appearance of micro-void in the μc-Ge:H thin film. In addition, by comparing two thickness groups of μc-Ge:H thin films deposited at different discharge powers, it is noticed that the evolution process relates to the formation of crystal nucleuses. Thus, a power gradient method is proposed to understand the mechanism of nucleation and crystal growth in the initial deposition process of μc-Ge:H films. Finally, by power gradient method, the incubation layer thickness of μc-Ge:H thin films has been decreased to less than 6 nm. Moreover, Raman scattering spectra shows a 38 nm μc-Ge:H film has a crystal fraction (XC) of 62.4%. Meanwhile, the mobility of TFT devices shows the improved electrical property of μc-Ge:H film deposited by power gradient method.

  4. Germanium: From Its Discovery to SiGe Devices

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  5. Ultraviolet-light-induced processes in germanium-doped silica

    DEFF Research Database (Denmark)

    Kristensen, Martin

    2001-01-01

    A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...

  6. MAJORANA Collaboration's Experience with Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Mertens, S. [Lawrence Berkeley National Laboratory (LBNL); Abgrall, N. [Lawrence Berkeley National Laboratory (LBNL); Avignone, III, F. T. [University of South Carolina/Oak Ridge National Laboratory (ORNL); Barabash, A.S. [Institute of Theoretical & Experimental Physics (ITEP), Moscow, Russia; Bertrand, F. E. [Oak Ridge National Laboratory (ORNL); Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Galindo-Uribarri, A [Oak Ridge National Laboratory (ORNL); Radford, D. C. [Oak Ridge National Laboratory (ORNL); Romero-Romero, E. [UTK/ORNL; Varner, R. L. [Oak Ridge National Laboratory (ORNL); White, B. R. [Oak Ridge National Laboratory (ORNL); Wilkerson, J. F. [UNC/Triangle Univ. Nucl. Lab, Durham, NC/ORNL; Yu, C.-H. [Oak Ridge National Laboratory (ORNL); Majorana, [MAJORANA Collaboration

    2015-01-01

    The goal of the Majorana Demonstrator project is to search for 0v beta beta decay in Ge-76. Of all candidate isotopes for 0v beta beta, Ge-76 has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0v beta beta, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC (R)(R). The process from production, to characterization and integration in MAJORANA mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.

  7. Yunnan Chihong Zinc & Germanium Co.,Ltd.Invested RMB 300 Million for Germanium Project with Output 30 Tons/Year

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    <正>Recently,Yunnan Chihong Zinc & Germanium Co.,Ltd.,an A-share listed company held by Yunnan Metallurgical Group Co.,Ltd.,kicked off its construction of a project for comprehen- sive utilization of lead-zinc associated metal germanium resources to be output at 30 tons/year.It is introduced that the investment

  8. Silicon/Germanium Molecular Beam Epitaxy

    OpenAIRE

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  9. Tensile strain mapping in flat germanium membranes

    Energy Technology Data Exchange (ETDEWEB)

    Rhead, S. D., E-mail: S.Rhead@warwick.ac.uk; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Shah, V. A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Department of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Sotomayor Torres, C. M. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  10. Radiation piezoelectric effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1977-06-01

    Irradiation with ionizing particles of a germanium single crystal and uniaxial deformation at right-angles to the particle beam produced an electric field and a corresponding emf due to the radiation piezoelectric effect. Measurements were carried out when such a single crystal was irradiated with ..cap alpha.. particles and protons. The piezoelectric emf increased linearly with the compressive stress and the ..cap alpha..-particle flux intensity. The emf depended weakly on the particle energy. The observed effect was due to the anisotropy resulting from uniaxial deformation.

  11. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  12. Novel low-cost approach for removal of surface contamination before texturization of commercial monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gangopadhyay, U. [Electronics and Telecommunication Engineering Department, IC Design and Fabrication Centre, Jadavpur University, Kolkata 700032 (India); School of Information and Communication Engineering, Sungkyunkwan University, 300, Chun-Chun dong, Jangan-gu, Suwon, 440-746 (Korea); Dhungel, S.K.; Yi, J. [School of Information and Communication Engineering, Sungkyunkwan University, 300, Chun-Chun dong, Jangan-gu, Suwon, 440-746 (Korea); Mondal, A.K. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 71103 (India); Saha, H. [Electronics and Telecommunication Engineering Department, IC Design and Fabrication Centre, Jadavpur University, Kolkata 700032 (India)

    2007-07-23

    This paper reports a novel approach on the surface treatment of monocrystalline silicon solar cells using an inorganic chemical, sodium hypochlorite (NaOCl) that has some remarkable properties. The treatment of contaminated crystalline silicon wafer with hot NaOCl helps the removal of organic contaminants due to its oxidizing properties. The objective of this paper is to establish the effectiveness of this treatment using hot NaOCl solution before the saw damage removal step of the conventional NaOH texturing approach. A comparative study of surface morphology and FTIR analyses of textured monocrystalline silicon surfaces with and without NaOCl pre-treatment is also reported. The process could result in a significant low cost approach viable for cleaning silicon wafers on a mass production scale. (author)

  13. 探测器级NTD硅单晶的研制%Manufacture of NTD Monocrystalline Silicon for Detectors

    Institute of Scientific and Technical Information of China (English)

    李强

    2001-01-01

    介绍了探测器级 NTD 硅单晶的制作工艺,并对如何保证探测器级 NTD 硅单晶的质量进行了讨论。%The process to manufacture the NTD monocrystalline silicon for detectors was described, and the problem how to ensure its quality was discussed.

  14. Thermopower of monocrystalline RESn/sub 3/ compounds (RE = La, Ce, Pr, Nd, Sm, Eu, and Gd)

    Energy Technology Data Exchange (ETDEWEB)

    Kletowski, Z. (Polska Akademia Nauk, Wroclaw. Inst. Niskich Temperatur i Badan Strukturalnych)

    1982-03-16

    The temperature dependence of the thermopower measured in monocrystalline RESn/sub 3/ compounds (RE = La, Ce, Pr, Nd, Sm, Eu, and Gd) has been investigated between 80 and 300 K. It was found that (1) the thermopower is always positive, (2) it differs widely between the compounds in temperature dependence, and (3) CeSn/sub 3/ has a giant thermopower with a well marked maximum of 61 ..mu..V/K at 150 K.

  15. Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

  16. A study on phase transformation of monocrystalline silicon due to ultra-precision polishing by molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Lin Zhang

    2012-12-01

    Full Text Available A three-dimensional molecular dynamics (MD simulation is conducted to investigate the material removal mechanism of monocrystalline silicon by mechanical polishing at atomistic scale with diamond abrasives. By monitoring relative positions of atoms in the monocrystalline silicon specimen, the microstructure transformation of monocrystalline silicon is clearly identified and analyzed. The phase transformation is accomplished under extreme conditions with high temperature and huge hydrostatic pressure, and as a result the silicon microstructure transforms from the four-coordinated diamond cubic structure (Si-I to the six-coordinated body-centered tetragonal structure (β-silicon. The values of local pressure and temperature are consistent with previous experimental results. In addition, the force between the diamond abrasive and specimen indicates the occurrence of phase transformation in the specimen. The potential energy of each atom is also calculated, which provides us an effective approach to analyze the energy variation of atoms in the mechanism of material deformation and the formation of machined surface after ultra-precision polishing.

  17. Cryogenic readout techniques for germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Benato, G. [University of Zurich, (Switzerland); Cattadori, C. [INFN - Milano Bicocca, (Italy); Di Vacri, A. [INFN LNGS, (Italy); Ferri, E. [Universita Milano Bicocca/INFN Milano Bicocca, (Italy); D' Andrea, V.; Macolino, C. [GSSI/INFN LNGS, (Italy); Riboldi, S. [Universita degli Studi di Milano/INFN Milano, (Italy); Salamida, F. [Universita Milano Bicocca/INFN Milano Bicocca, (Italy)

    2015-07-01

    High Purity Germanium detectors are used in many applications, from nuclear and astro-particle physics, to homeland security or environment protection. Although quite standard configurations are often used, with cryostats, charge sensitive amplifiers and analog or digital acquisition systems all commercially available, it might be the case that a few specific applications, e.g. satellites, portable devices, cryogenic physics experiments, etc. also require the development of a few additional or complementary techniques. An interesting case is for sure GERDA, the Germanium Detector Array experiment, searching for neutrino-less double beta decay of {sup 76}Ge at the Gran Sasso National Laboratory of INFN - Italy. In GERDA the entire detector array, composed of semi-coaxial and BEGe naked crystals, is operated suspended inside a cryostat filled with liquid argon, that acts not only as cooling medium and but also as an active shield, thanks to its scintillation properties. These peculiar circumstances, together with the additional requirement of a very low radioactive background from all the materials adjacent to the detectors, clearly introduce significant constraints on the design of the Ge front-end readout electronics. All the Ge readout solutions developed within the framework of the GERDA collaboration, for both Phase I and Phase II, will be briefly reviewed, with their relative strength and weakness compared together and with respect to ideal Ge readout. Finally, the digital processing techniques developed by the GERDA collaboration for energy estimation of Ge detector signals will be recalled. (authors)

  18. High Curie temperature Mn5Ge3 thin films produced by non-diffusive reaction

    Science.gov (United States)

    Assaf, E.; Portavoce, A.; Hoummada, K.; Bertoglio, M.; Bertaina, S.

    2017-02-01

    Polycrystalline Mn5Ge3 thin films were produced on SiO2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device, and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as molecular beam epitaxy-grown monocrystalline Mn5Ge3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn5Ge3Cx thin films with 0.1 ≤ x ≤ 0.2. NDR appears as a complementary metal oxide semi-conductor-compatible efficient method to produce good magnetic quality high-Curie temperature Mn5Ge3 thin films.

  19. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  20. The Genesis of Lincang Germanium Deposit—A Preliminary Investigation

    Institute of Scientific and Technical Information of China (English)

    胡瑞忠; 叶造军; 等

    1996-01-01

    The mechanism of formation of the Lincang germanium deposit is discussed in the light of the spatial distribution of Ge-rich coal and siliceous rocks,the sulfur isotopic composition of pyrite in the Ge-rich coal,the variation of Ge abundance in the coal seams and the geochemical characteristics of the siliceous rocks.The results show that the siliceous rocks intercalated with the coal seamw were deposited from a hyrothermal medium through which germanium was enriched in the coal beds.The primary source of germanium is thought to be the Gerich granite in the basement of the sedimentary basin.

  1. Temperature-dependant study of phosphorus ion implantation in germanium

    Science.gov (United States)

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  2. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  3. A molecular dynamics study of void initiation and growth in monocrystalline and nanocrystalline copper

    Science.gov (United States)

    Traiviratana, Sirirat

    MD simulations in monocrystalline and nanocrystalline copper were carried out with LAMMPS to reveal void growth mechanisms. The specimens were subjected to both tensile uniaxial and hydrostatic strains; the results confirm that the emission of (shear) loops is the primary mechanism of void growth. The expansion of the loops and their cross slip leads to the severely work hardened layer surrounding a growing void. Calculations were carried out on voids with different sizes, and a size dependence of the stress response to emitted dislocations was observed, in disagreement with the Gurson model [1] which is scale independent. The growth of voids simulated by MD is compared with the Cocks-Ashby constitutive model and significant agreement is found. The density of geometrically-necessary dislocations as a function of void size is calculated based on the emission of shear loops and their outward propagation. Calculations were also carried out for a void at the interface between two grains sharing a tilt boundary. The results show similar dislocation behaviors. A code that uses Voronoi tessellation for constructing nanocrystalline structures was developed and used to prepare the structures for simulations. Nanocrystal simulations reveal grain sliding and grain rotation as the nanocrystal deformed. Voids were nucleated at grain junctions and grew to coalescence as dislocations accommodated the material transfer. A code that can be used during post-processing to extract useful dislocation information from MD simulation data was partially developed and proved the feasibility of automatically analyzing dislocations.

  4. Effect of Shock Compression Method on the Defect Substructure in Monocrystalline Copper

    Energy Technology Data Exchange (ETDEWEB)

    Cao, B Y; Meyers, M A; Lassila, D H; Schneider, M S; Kad, B K; Huang, C X; Xu, Y B; Kalantar, D H; Remington, B A

    2005-02-17

    Monocrystalline copper samples with orientations of [001] and [221] were shocked at pressures ranging from 20 GPa to 60 GPa using two techniques: direct drive lasers and explosively driven flyer plates. The pulse duration for these techniques differed substantially: 2 ns for the laser experiments and 1.1-1.4 {micro}s for the flyer-plate experiments. The residual microstructures were dependent on orientation, pressure, and shocking method. The much shorter pulse duration in laser shock yielded recovery microstructures with no or limited dislocation motion. For the flyer-plate experiments, the longer pulse duration allow shock-generated defects to reorganize into lower energy configurations. Calculations show that the post shock cooling occurs in a time scale of 0.2 s for laser shock and 1000 s for plate-impact shock, propitiating recovery and recrystallization conditions for the latter. At the higher pressure level extensive recrystallization was observed in the plate-impact samples, while it was absent in laser shock. An effect that is proposed to contribute significantly to the formation of recrystallized regions is the existence of micro-shearbands, which increase the local temperature.

  5. The effect of surface microstructure on the optical reflectance of monocrystalline silicon

    Science.gov (United States)

    Wang, Quanji; Zhou, Weidong; Chen, Fangfang; Yang, Ruizhao

    2016-12-01

    Surface texturing is an important technique used to enhance the light absorption by forming certain microstructures on silicon surface. In this article, four different microstructures, based on repeat units of triangles, perpendicular grooves, hexagons and parallel grooves respectively, were fabricated directly on the surface of monocrystalline silicon wafers by using femtosecond laser texturing technique. Compare to the silicon wafers that were not treated by laser, a significant decrease of light reflectance can be observed for those laser etched silicon surfaces. And the treated silicon surface with triangles texture was found to have the lowest relative reflectance of ∼20% in the wavelength range from 400 to 1000 nm, if the textured surfaces were irradiated using the same laser fabrication condition. In addition, the relative reflectance of laser etched silicon surfaces with similar repeat unit but different structural period was investigated as well. The results show that the relative reflectance of the treated surface increases along with the increase of structural period size. These results obtained here can provide a useful guide for fabricating silicon-based optoelectronic devices with a more excellent anti-reflective performance.

  6. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    Science.gov (United States)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing.

  7. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    Science.gov (United States)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing. PMID:28084433

  8. Direct growth of graphene film on germanium substrate.

    Science.gov (United States)

    Wang, Gang; Zhang, Miao; Zhu, Yun; Ding, Guqiao; Jiang, Da; Guo, Qinglei; Liu, Su; Xie, Xiaoming; Chu, Paul K; Di, Zengfeng; Wang, Xi

    2013-01-01

    Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).

  9. Heteroepitaxial growth of relaxed germanium on silicon

    Science.gov (United States)

    Nayfeh, Ammar

    Germanium has a many advantages to silicon as a semiconductor material. Most importantly, Ge has a larger lattice mobility (hole and electron) compared to Si. The larger mobility provides a higher source injection velocity, which translates into higher drive current and smaller gate delay. In addition, the near-infrared photodetection and compatibility with Si technology of Ge-based materials, allow simultaneous fabrication of photodetectors and Si CMOS receiver circuits in a monolithically integrated fashion. The main disadvantage is that germanium based oxides are not stable and but rather soluble in water. But the inevitable shift to high-kappa/metal gate has made Ge a serious option nevertheless. In order for the semiconductor industry to take advantage of the properties of Ge, heterogeneous integration of Ge and Si must be possible since using bulk Ge is not viable. However, Ge growth on Si is hampered by the large lattice mismatch (4%) between Ge and Si which results in growth that is dominated by "islanding" and misfit dislocations. The following thesis, investigates both the islanding and dislocation density issues associated with this problem. A 90% reduction of surface roughness by hydrogen annealing is demonstrated accompanied with a theoretical model to explain these results. Using multi-steps of growth and hydrogen annealing, Ge layers on Si were achieved with dislocation density as low as 1x107cm-2 and Rrms surface roughness of 2.5nm. The method was patented and named, Multiple Hydrogen Annealing for Heteroexpitaxy (MHAH). A complete experimentally based theoretical model is provided that explains these results. In addition, MOSCAPS, a pMOS transistor, and a MSM photodetector are fabricated on the MHAH-Ge substrates. Also high-kappa/metal gate compatibility is demonstrated on MHAH-Ge. The electrical results indicate that MHAH-Ge approaches the electrical quality of bulk Ge. These results point to a promising step in achieving heterogeneous integration

  10. Germanium 70: a gamma ray detector for astrophysics; Le germanium 70: un detecteur de rayons gamma en astrophysique

    Energy Technology Data Exchange (ETDEWEB)

    Durouchoux, P. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee

    1994-12-31

    A thorough study concerning the background noise generated from the germanium detectors used in astrophysics spatial experiences, is presented. These detectors, selected for their energy high definition, are sensitive to cosmic radiations that activate some isotopes contained in the natural germanium and induce background noise through a beta+ decay. This noise component may be notably reduced with utilization of {sup 70}Ge isotope enriched detectors, which do not present such interactions. The predictions have been verified through space tests conducted from Australia in 1992. Preliminary results and prospectives for astrophysics application of the Germanium 70 isotope, are discussed. 6 figs., 2 tabs., 3 refs.

  11. Positron annihilation in neutron-irradiated germanium

    Energy Technology Data Exchange (ETDEWEB)

    Bartenev, G.M.; Bardyshev, I.I.; Erchak, D.P.; Stel' makh, V.F.; Tsyganov, A.D.

    1979-04-01

    The annealing of radiation defects in a germanium single crystal irradiated with 10/sup 18/ neutrons/cm/sup 2/ was studied by positron annihilation, ESR, and resistivity measurements. It was found that positrons are trapped by radiation defects. The intensity of the narrow component of the angular correlation of the annihilation radiation yielded the concentration of defect clusters in the irradiated sample n/sub d/approx. =3 x 10/sup 14/ cm/sup -3/. Three characteristic annealing stages were identified. At 160--200 /sup 0/C, point defects were annealed within the crystal. At 200--320 /sup 0/C, there was ''loosening'' of the clusters, and the charge state of the defects changed. At 320--550 /sup 0/C, the clusters were annealed.

  12. Germanium detectors and natural radioactivity in food

    Energy Technology Data Exchange (ETDEWEB)

    Garbini, Lucia [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: GeDet-Collaboration

    2013-07-01

    Potassium is a very important mineral for many physiological processes, like fluid balance, protein synthesis and signal transmission in nerves. Many aliments like raisins, bananas or chocolate contain potassium. Natural potassium contains 0.012% of the radioactive isotope Potassium 40. This isotope decays via β{sup +} decay into a metastable state of Argon 40, which reaches its ground state emitting a gamma of 1460 keV. A commercially produced Germanium detector has been used to measure the energy spectra of different selected food samples. It was calibrated with KCl and potassium contents were extracted. Results verify the high potassium content of commonly recommended food samples. However, the measurement quantitatively differ from the expectations in several cases. One of the most interesting results concerns chocolate bars with different percentages of cacao.

  13. Raman spectroscopy of hydrogen molecules in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Hiller, M. [Technische Universitaet Dresden, 01062 Dresden (Germany)]. E-mail: martin.hiller@physik.phy.tu-dresden.de; Lavrov, E.V. [Technische Universitaet Dresden, 01062 Dresden (Germany); Weber, J. [Technische Universitaet Dresden, 01062 Dresden (Germany)

    2006-04-01

    Single-crystalline germanium samples exposed to hydrogen and/or deuterium plasma are studied by Raman scattering. Two bands at 1980 and 4155cm{sup -1} are assigned to local vibrational modes of Ge-H and H{sub 2}, respectively. Polarization sensitive Raman scattering spectra suggest that the plasma treatment results in {l_brace}111{r_brace} platelets whose basic units are Ge-H bonds. The signal at 4155cm{sup -1} is shown to result from molecular hydrogen trapped within these platelets. Another broad Raman signal around 3930cm{sup -1} seems to be due to H{sub 2} trapped in some other type of voids formed during the plasma treatment. Two sharp peaks at 3826 and 3834cm{sup -1} are assigned to ortho- and para-H{sub 2} trapped at the interstitial T site.

  14. Synthesis of silicon and germanium nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  15. Lattice site and thermal stability of transition metals in germanium

    CERN Document Server

    Augustyns, Valérie; Pereira, Lino

    Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. However, a very important goal in microelectronics is to obtain faster integrated circuits. The advantages of germanium compared to silicon (e.g. a higher mobility of the charge carriers) motivates further research on germanium based materials. Semiconductor doping (e.g. introducing impurities into silicon and germanium in order to alter - and control - their properties) can be done by ion implantation or by in situ doping, whereby the host material is doped during growth. This thesis focuses on introducing dopants by ion implantation. The implantation as well as the subsequent measurements were performed in ISOLDE (CERN) using the emission channeling technique. Although ion implantation generates undesired defects in the host material (e.g. vacancies), such damage can be reduced by performing the implantation at an elevated temperature....

  16. Solid solubility of germanium in silver

    Energy Technology Data Exchange (ETDEWEB)

    Kazemi, Hamed [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland); Weber, Ludger, E-mail: ludger.weber@epfl.ch [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer The solvus line in the binary Ag-Ge system has been assessed based on measurements of electrical resistivity and specific gravity. Black-Right-Pointing-Pointer The two measurement techniques yield close agreement. Black-Right-Pointing-Pointer The data found in this contribution indicate lower solid solubility than in previous assessments. Black-Right-Pointing-Pointer Redlich-Kister parameters have been evaluated to describe the solvus line. - Abstract: The solid solubility of germanium in silver has been measured in the temperature range of 520 K to 913 K via measurements of density and of electrical conductivity of two near-eutectic Ag-Ge alloys. The atomic fraction of germanium in solid solution varied between 0.014 and 0.089 over the mentioned range of temperature and an extrapolated maximum solubility of 0.093 at the eutectic temperature of 924 K is found. For samples with spheroidized Ge-particles before the equilibrium heat treatments at low temperature for 24 or 48 h, thermodynamic equilibrium was supposedly not achieved at temperatures below 723 K. Much longer heat treatments (tens of days) on the significantly finer as-cast microstructure allowed to reach equilibrium probably down to 600 K. Independently of whether thermodynamic equilibrium was reached or not the electrical conductivity and the density measurements yielded good agreement typically within a few tenth of percent of atomic Ge-concentration in solid solution in {alpha}-Ag for a given temperature. The results are close to, yet consistently slightly lower than, the values given by Owen and Rowland on which the current assessment of the solvus in the Ag-Ge binary is based. More recent results by Filipponi and co-workers are clearly not in agreement with the data presented here.

  17. Electromechanically cooled germanium radiation detector system

    Science.gov (United States)

    Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

    1999-02-01

    We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++ [1], GAMANL [2], GRPANL [3]and MGAU [4], typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service [5]. The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted.

  18. Promoting cell proliferation using water dispersible germanium nanowires.

    Directory of Open Access Journals (Sweden)

    Michael Bezuidenhout

    Full Text Available Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM, High resolution-TEM, and scanning electron microscope (SEM. Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth.

  19. Photoionization of monocrystalline CVD diamond irradiated with ultrashort intense laser pulse

    Science.gov (United States)

    Lagomarsino, Stefano; Sciortino, Silvio; Obreshkov, Boyan; Apostolova, Tzveta; Corsi, Chiara; Bellini, Marco; Berdermann, Eleni; Schmidt, Christian J.

    2016-02-01

    Direct laser writing of conductive paths in synthetic diamond is of interest for implementation in radiation detection and clinical dosimetry. Unraveling the microscopic processes involved in laser irradiation of diamond below and close to the graphitization threshold under the same conditions as the experimental procedure used to produce three-dimensional devices is necessary to tune the laser parameters to optimal results. To this purpose a transient currents technique has been used to measure laser-induced current signals in monocrystalline diamond detectors in a wide range of laser intensities and at different bias voltages. The current transients vs time and the overall charge collected have been compared with theoretical simulations of the carrier dynamics along the duration and after the conclusion of the 30 fs laser pulse. The generated charge has been derived from the collected charge by evaluation of the lifetime of the carriers. The plasma volume has also been evaluated by measuring the modified region. The theoretical simulation has been implemented in the framework of the empirical pseudopotential method extended to include time-dependent couplings of valence electrons to the radiation field. The simulation, in the low-intensity regime, I ˜1 TW /cm2 , predicts substantial deviation from the traditional multiphoton ionization, due to nonperturbative effects involving electrons from degenerate valence bands. For strong field with intensity of about 50 TW /cm2, nonadiabatic effects of electron-hole pair excitation become prominent with high carrier densities eventually causing the optical breakdown of diamond. The comparison of theoretical prediction with experimental data of laser-generated charge vs laser energy density yields a good quantitative agreement over six orders of magnitude. At the highest intensities the change of slope in the trend is explained taking into account the dependence of the optical parameters and the carrier mobility on plasma

  20. Research on the effects of machining-induced subsurface damages on mono-crystalline silicon via molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Hongwei, E-mail: hwzhao@jlu.edu.cn [College of Mechanical Science and Engineering, Jilin University, 5988 Renmin Street, Changchun, Jilin 130025 (China); Shi Chengli; Zhang Peng; Zhang Lin; Huang Hu; Yan Jiwang [College of Mechanical Science and Engineering, Jilin University, 5988 Renmin Street, Changchun, Jilin 130025 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer MD simulations of nano-cutting process are carried out to obtain machining-induced subsurface with diamond cutting tools. Black-Right-Pointing-Pointer After cutting, the crystal lattice reconstructed and led to the formation of the machined surface. Black-Right-Pointing-Pointer The mechanical properties of the pristine and machining-induced subsurface Si are studied by means of nanoindentation. Black-Right-Pointing-Pointer Nanoindentation results show that the hardness of the machined surface was smaller than mono-crystalline Si. - Abstract: Nanoindentation simulation via molecular dynamic (MD) method was carried out to investigate the characteristics of machining-induced subsurface damage of mono-crystalline silicon with a spherical diamond indenter. In this study, MD simulations of nano-cutting process were carried out firstly to cut through the specimen's surface with diamond cutting tools of different edge radius of 0 nm, 3 nm and 5 nm respectively. Then, MD simulation of nanoindentation on the machined surface was carried out. Tersoff potential was used to model the interaction of Si atoms, and the interaction between Si and C atoms was modeled by Morse potential. Simulational results indicate that during cutting process, the specimen undergo plastic deformation and phase transformation. After cutting process, the crystal lattice reconstructs and the residual amorphous layers lead to the formation of the machined surface. Nanoindentation results show that the hardness of the machined surface is smaller than mono-crystalline Si. So in order to get accurate properties of the pristine silicon or other semiconductor materials via experiments, the amorphous phase should be completely removed or it would influence the mechanical properties of the pristine materials.

  1. III-V/silicon germanium tandem solar cells on silicon substrates

    Science.gov (United States)

    Schmieder, Kenneth J.

    The development of a cost-effective high voltage tandem solar cell that can be grown directly on a silicon (Si) platform can lead to a 34% increase in efficiency over the present best monocrystalline Si laboratory device. III-V devices are known to yield some of the highest efficiencies in photovoltaics, but the high cost of lattice matched substrates and metal organic chemical vapor deposition (MOCVD) and device development make them prohibitively expensive in many markets. By utilizing silicon substrates and limiting the thickness of the III-V MOCVD material growth, this cost can be reduced. The leveraging technology of this initiative is a metamorphic silicon:germanium (SiGe) buffer between the silicon substrate and the active device layers. As developed by AmberWave Inc., it provides a low-dislocation interface for III-V nucleation and a high quality bottom cell grown by reduced pressure chemical vapor deposition (RPCVD). This research first reports on the theoretical limits of a III-V/SiGe tandem solar cell. Results will evaluate multiple III-V materials for the determination of optimal material composition to be lattice-matched with SiGe. Following this, a more complex device simulation, incorporating all major loss mechanisms, is accomplished in order to predict ideal efficiency targets and evaluate present experimental structures. Results demonstrate a robust model capable of simulating a wide range of binary and ternary III-V devices. Predictions show the capability of a tandem device operating at 32.5% 1-sun efficiency without requiring TDD improvement beyond that of the present SiGe layers. Following simulations, experimental III-V structures are grown via MOCVD and characterized, indicating successful process development for growth of III-V materials on the SiGe platform. This growth is then validated via the design and development of experimental solar device structures. Each iteration, beginning with the single-junction windowless GaAsP solar cell and

  2. Coating curly carbon nanotubes with monocrystalline Zn(BO2)2 and the mechanism of straightening the tubes

    Institute of Scientific and Technical Information of China (English)

    LIU; Jinzhang; YAN; Pengxun; YUE; Guanghui

    2006-01-01

    We overgrew single-crystalline Zn(BO2)2 coatings on carbon nanotubes (CNTs) for the first time. Scanning electron microscopy and transmission electron microscopy analyses revealed that the carbon nanotube-zinc borate composite rods are from tens to hundreds of nm in diameter. It is notable that the original curly tubes were straightened by the monocrystalline coatings. In addition, the crystal nucleation and growth on the surface of CNT were explained. We set a two-dimensional model, which is based on our experimental result, to qualitatively explain the mechanism of straightening the curly tubes by coating them with single-crystals.

  3. Self-assembled germanium nano-structures by laser-assisted oxidation

    Institute of Scientific and Technical Information of China (English)

    Huang Wei-Qi; Liu Shi-Rong

    2006-01-01

    The investigation on the oxidation behaviour of Si1-xGex; alloys (x=0.05, 0.15, and 0.25) is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8ranging from 5.5 nm to 10 nm are formed by the low-temperature laser-assisted dry oxidation of Si1-xGex substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence (PL) spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree-Fock-Roothaan (UHFR) method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.

  4. Germanium separation and purification by leaching and precipitation

    Institute of Scientific and Technical Information of China (English)

    Saeid Bayat; Sajjad Aghazadeh; Mohammad Noaparast; Mahdi Gharabaghi; Behrooz Taheri

    2016-01-01

    In this research work, extraction and purification of germanium from zinc leach residues (ZLR) were investigated. The results of ICP, XRF, and atomic adsorption spectroscopy (AAS) tests show that contents of germanium, iron, lead, and zinc within the leaching residue were 105×10−6, 3.53%, 10.35%, and 8.8%, respectively. XRD results indicate that the main minerals were in different forms of sulfates (CaSO4·2H2O, PbSO4 and ZnSO4·6H2O), silicate (SiO2), and oxide (Fe2O3). Dissolution of leaching filter cake was carried out using 5 parameters and each in 4 levels (acid concentration, temperature, time, liquid-to-solid ratio, and stirring speed) by Taguchi method (L16), and then optimization of the effective parameters by response surface method. Under optimum conditions, zinc and germanium dissolution efficiencies were 88.71% and 8%, respectively. Leaching tests with sulfuric acid (added di-ammonium oxalate monohydrate) and hydrochloric acid (HCl) on the residues obtained from previous-stage sulfuric acid dissolution, yielded germanium and iron recoveries of 83%, 88%, 40%, and 90%, respectively. Thus, leaching experiment with sulfuric acid (added di-ammonium oxalate monohydrate) was superior to that with hydrochloric acid due to high and low extraction amounts of germanium and iron, respectively. Precipitation experiments revealed that germanium purification with tannic acid presented a better result compared to sodium hydroxide and ammonia. Under optimum conditions, contents of germanium and iron in the solution after precipitation were 0.1505% and 14.7% with precipitation yields of 91% and 52%, respectively.

  5. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develope a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four top-illuminated, 32x32 germanium sub-arrays...

  6. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  7. Anisotropic Optical Properties of Layered Germanium Sulfide

    CERN Document Server

    Tan, Dezhi; Wang, Feijiu; Mohamed, Nur Baizura; Mouri, Shinichiro; Sandhaya, Koirala; Zhang, Wenjing; Miyauchi, Yuhei; Ohfuchi, Mari; Matsuda, Kazunari

    2016-01-01

    Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in GeS at room temperature. Moreover, determination of the polarization dependent characteristics of the PL and absorption reveals...

  8. Reaction studies of hot silicon, germanium and carbon atoms

    Energy Technology Data Exchange (ETDEWEB)

    Gaspar, P.P.

    1990-11-01

    The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

  9. Germanium, Arsenic, and Selenium Abundances in Metal-Poor Stars

    CERN Document Server

    Roederer, Ian U

    2012-01-01

    The elements germanium (Ge, Z=32), arsenic (As, Z=33), and selenium (Se, Z=34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 < [Fe/H] < -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios rema...

  10. Low threshold monocrystalline Nd:(Gd,Lu)2O3 channel waveguide laser

    NARCIS (Netherlands)

    Kahn, Andreas; Heinrich, Sebastian; Kühn, Henning; Petermann, Klaus; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; Huber, Günther

    2009-01-01

    We report the first waveguide laser based on a rare-earth-doped sesquioxide. A 2 μm thick lattice matched Nd(0.5%):${(Gd, Lu)_2O_3}$ film with a nearly atomically flat surface has been epitaxially grown on a $Y_2O_3$ substrate, using pulsed laser deposition. The film has been structured with reactiv

  11. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  12. Modeling of dislocation dynamics in germanium Czochralski growth

    Science.gov (United States)

    Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

    2017-06-01

    Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

  13. Next Generation Device Grade Silicon-Germanium on Insulator

    Science.gov (United States)

    Littlejohns, Callum G.; Nedeljkovic, Milos; Mallinson, Christopher F.; Watts, John F.; Mashanovich, Goran Z.; Reed, Graham T.; Gardes, Frederic Y.

    2015-02-01

    High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.

  14. Characterisation of a Broad Energy Germanium (BEGe) detector

    Energy Technology Data Exchange (ETDEWEB)

    Barrientos, D., E-mail: diego_barrientos@usal.es [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Boston, A.J.; Boston, H.C. [Nuclear Physics Group, University of Liverpool (United Kingdom); Quintana, B.; Sagrado, I.C. [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Unsworth, C.; Moon, S.; Cresswell, J.R. [Nuclear Physics Group, University of Liverpool (United Kingdom)

    2011-08-21

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of {sup 241}Am, {sup 22}Na and {sup 137}Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  15. Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Abhijit; Beese, Emily; Saenz, Theresa; Warren, Emily; Nemeth, William; Young, David; Marshall, Alexander; Florent, Karine; Kurinec, Santosh K.; Agarwal, Sumit; Stradins, Pauls

    2016-11-21

    NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

  16. In-depth TEM characterization of block copolymer pattern transfer at germanium surfaces

    Science.gov (United States)

    Cummins, Cian; Collins, Timothy W.; Kelly, Roisin A.; McCarthy, Eoin K.; Morris, Michael A.

    2016-12-01

    Dry plasma etching for the pattern transfer of mask features is fundamental to semiconductor processing and the development of device and electrically conducting elements becomes more challenging as features reach the deep nanoscale regime. In this work, high resolution transmission electron microscopy (TEM) coupled with energy dispersive x-ray (EDX) characterization were used to analyze the pattern transfer of graphoepitaxially aligned block copolymer (BCP) features to germanium (Ge) substrates as a function of time. The BCP patterns were converted into metal oxide hardmasks in order to affect good aspect ratios of the transferred features. An unusual interface layer between metal oxide nanowires and the germanium-on-insulator substrate was observed. EDX analysis shows that the origin of this interface layer is a result of the presence of a negative tone e-beam resist material, HSQ (hydrogen silsesquioxane). HSQ was employed as a guiding material to align line-space features of poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP with 16 nm half-pitch topography. Additionally, the existence of a metal oxide layer (from the initial PS-b-P4VP film) is also shown through ex situ TEM and EDX characterization. Three dimensional modeling of features is also provided giving a unique insight into the arrangement and structure of BCP features prior to and after the pattern transfer process. The results presented in this article highlight the accuracy of high resolution electron microscopy and elemental mapping of BCP generated on-chip etch masks to observe and understand through-film features affecting pattern transfer.

  17. The GALATEA test-facility for High Purity Germanium Detectors

    CERN Document Server

    Abt, I; Doenmez, B; Garbini, L; Irlbeck, S; Majorovits, B; Palermo, M; Schulz, O; Seitz, H; Stelzer, F

    2014-01-01

    GALATEA is a test facility designed to investigate bulk and surface effects in high purity germanium detectors. A vacuum tank houses an infrared screened volume with a cooled detector inside. A system of three stages allows an almost complete scan of the detector. The main feature of GALATEA is that there is no material between source and detector. This allows the usage of alpha and beta sources as well as of a laser beam to study surface effects. A 19-fold segmented true-coaxial germanium detector was used for commissioning.

  18. The GALATEA test-facility for high purity germanium detectors

    Science.gov (United States)

    Abt, I.; Caldwell, A.; Dönmez, B.; Garbini, L.; Irlbeck, S.; Majorovits, B.; Palermo, M.; Schulz, O.; Seitz, H.; Stelzer, F.

    2015-05-01

    GALATEA is a test facility designed to investigate bulk and surface effects in high purity germanium detectors. A vacuum tank houses a cold volume with the detector inside. A system of three precision motorized stages allows an almost complete scan of the detector. The main feature of GALATEA is that there is no material between source and detector. This allows the usage of alpha and beta sources to study surface effects. A 19-fold segmented true-coaxial germanium detector was used for commissioning. A first analysis of data obtained with an alpha source is presented here.

  19. The GALATEA test-facility for high purity germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Abt, I.; Caldwell, A.; Dönmez, B.; Garbini, L.; Irlbeck, S.; Majorovits, B.; Palermo, M., E-mail: palermo@mpp.mpg.de; Schulz, O.; Seitz, H.; Stelzer, F.

    2015-05-11

    GALATEA is a test facility designed to investigate bulk and surface effects in high purity germanium detectors. A vacuum tank houses a cold volume with the detector inside. A system of three precision motorized stages allows an almost complete scan of the detector. The main feature of GALATEA is that there is no material between source and detector. This allows the usage of alpha and beta sources to study surface effects. A 19-fold segmented true-coaxial germanium detector was used for commissioning. A first analysis of data obtained with an alpha source is presented here.

  20. Germanium, Arsenic, and Selenium Abundances in Metal-poor Stars

    Science.gov (United States)

    Roederer, Ian U.

    2012-09-01

    The elements germanium (Ge, Z = 32), arsenic (As, Z = 33), and selenium (Se, Z = 34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 Prochaska).This paper includes data taken at The McDonald Observatory of The University of Texas at Austin.

  1. Tensile-strained germanium microdisks with circular Bragg reflectors

    Science.gov (United States)

    El Kurdi, M.; Prost, M.; Ghrib, A.; Elbaz, A.; Sauvage, S.; Checoury, X.; Beaudoin, G.; Sagnes, I.; Picardi, G.; Ossikovski, R.; Boeuf, F.; Boucaud, P.

    2016-02-01

    We demonstrate the combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors. The microdisks with suspended lateral Bragg reflectors form a cavity with quality factors up to 2000 around 2 μm. This represents a key feature to achieve a microlaser with a quasi-direct band gap germanium under a 1.6% biaxial tensile strain. We show that lowering the temperature significantly improves the quality factor of the quasi-radial modes. Linewidth narrowing is observed in a range of weak continuous wave excitation powers. We finally discuss the requirements to achieve lasing with these kind of structures.

  2. Comparative infrared study of silicon and germanium nitrides

    Science.gov (United States)

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  3. Characterisation of two AGATA asymmetric high purity germanium capsules

    Energy Technology Data Exchange (ETDEWEB)

    Colosimo, S.J., E-mail: sjc@ns.ph.liv.ac.uk [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Lazarus, I.H. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Nolan, P.J. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Simpson, J. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Unsworth, C. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

    2015-02-11

    The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

  4. Effect of a-Si:H interface buffer layer on the performance of hydrogenated amorphous silicon germanium thin film solar cell%非晶硅界面缓冲层对非晶硅锗电池性能的影响

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 张德坤; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    In the light of the open circuit voltage and fill factor reduction resulting from band gap discontinuities and high defect densities at interfaces when more germanium is mixed into the intrinsic layer of hydrogenated amorphous silicon germanium solar cell, the insertion of a-Si:H buffer layer with proper band gap into PI interface not only mitigates band gap discontinuities and interface recombination, but also improves the electric field distribution by reducing the defect densities at PI interface, thus the collection efficiency of a-SiGe:H solar cell is enhanced. By inserting a-Si:H buffer layer into IN interface and designing band gap profile along the a-SiGe:H intrinsic layer further, the 8.72%conversion efficiency of single junction a-SiGe:H solar cell is achieved when only Al back reflector is added as back contact.%针对非晶硅锗电池本征层高锗含量时界面带隙失配以及高界面缺陷密度造成电池开路电压和填充因子下降的问题,通过在PI界面插入具有合适带隙的非晶硅缓冲层,不仅有效缓和了带隙失配,降低界面复合,同时也通过降低界面缺陷密度改善内建电场分布,从而提高了电池的收集效率.进一步引入IN界面缓冲层以及对非晶硅锗本征层进行能带梯度设计,在仅采用Al背电极时,单结非晶硅锗电池转换效率达8.72%.

  5. Novel approach for n-type doping of HVPE gallium nitride with germanium

    Science.gov (United States)

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  6. Nearly zero reflectance of nano-pyramids and dual-antireflection coating structure for monocrystalline silicon solar cells.

    Science.gov (United States)

    Chang, Hyo Sik; Jung, Hyun-Chul

    2011-04-01

    The effect of two-step surface treatment on monocrystalline silicon solar cells was investigated. We changed the nanostructure on pyramidal surfaces by wet nano-texturing so that less light is reflected. The two-step nano-texturing process reduces the average reflectance to about 4% in the 300-1100 nm wavelength region. The use of an antireflection coating resulted in an effective reflectance of 1%. We found that the reflectance obtained by wet nano-texturing was lower than that obtained by conventional alkaline texturing. Thus, we can expect a further increase in the efficiency of silicon solar cells with two-step nano-texturing by a wet chemical process.

  7. Atomistic simulations of the effect of embedded hydrogen and helium on the tensile properties of monocrystalline and nanocrystalline tungsten

    Science.gov (United States)

    Chen, Zhe; Kecskes, Laszlo J.; Zhu, Kaigui; Wei, Qiuming

    2016-12-01

    Uniaxial tensile properties of monocrystalline tungsten (MC-W) and nanocrystalline tungsten (NC-W) with embedded hydrogen and helium atoms have been investigated using molecular dynamics (MD) simulations in the context of radiation damage evolution. Different strain rates have been imposed to investigate the strain rate sensitivity (SRS) of the samples. Results show that the plastic deformation processes of MC-W and NC-W are dominated by different mechanisms, namely dislocation-based for MC-W and grain boundary-based activities for NC-W, respectively. For MC-W, the SRS increases and a transition appears in the deformation mechanism with increasing embedded atom concentration. However, no obvious embedded atom concentration dependence of the SRS has been observed for NC-W. Instead, in the latter case, the embedded atoms facilitate GB sliding and intergranular fracture. Additionally, a strong strain enhanced He cluster growth has been observed. The corresponding underlying mechanisms are discussed.

  8. Direct observations of the vacancy and its annealing in germanium

    DEFF Research Database (Denmark)

    Slotte, J.; Kilpeläinen, S.; Tuomisto, F.

    2011-01-01

    Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm-2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100...

  9. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    CERN Document Server

    Gross, J L

    2011-01-01

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  10. Composite germanium monochromators - results for the TriCS

    Energy Technology Data Exchange (ETDEWEB)

    Schefer, J.; Fischer, S.; Boehm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Composite germanium monochromators are in the beginning of their application in neutron diffraction. We show here the importance of the permanent quality control with neutrons on the example of the 311 wafers which will be used on the single crystal diffractometer TriCS at SINQ. (author) 2 figs., 3 refs.

  11. Noise and oscillations in gold-doped germanium photodiodes

    NARCIS (Netherlands)

    Bolwijn, P.T.; Rijst, C. v. d.; Ast, W.G. van; Lam, T.

    1967-01-01

    Considerable noise effects in excess of shot noise and oscillations found in commercially available, gold-doped germanium photodiodes have been investigated. The noise and oscillation effects occur in the photocurrent of reversely biased diodes at temperatures below about 100°K. The dependence of th

  12. Active noise canceling system for mechanically cooled germanium radiation detectors

    Science.gov (United States)

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  13. Preparation and characterization of DC sputtered molybdenum thin films

    Directory of Open Access Journals (Sweden)

    Abd El-Hady B. Kashyout

    2011-03-01

    Full Text Available Molybdenum (Mo thin films have been deposited on soda-lime glass substrates using a DC magnetron sputtering system. Their electrical resistivity, and their morphological, structural and adhesive properties have been examined with respect to the deposition power, deposition time and substrate temperature. The electrical resistivity of the Mo films could be reduced by increasing any of the above parameters. Within the range of the investigated deposition parameters, the films showed a mono-crystalline nature with a preferred orientation along the (1 1 0 plane. The Mo films adhesion to the soda-lime glass could be improved by increasing the substrate temperature. At a deposition power of 200 W, deposition time of 20 min and substrate temperature of 450 °C, Mo thin film exhibiting mono-crystalline structure with thickness equal to 450 nm and electrical resistivity equal to 1.85 × 10−4 Ω cm was obtained.

  14. Germanium detector studies in the framework of the GERDA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Budjas, Dusan

    2009-05-06

    The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for {sup 76}Ge neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium detectors for ionizing radiation, which are enriched in {sup 76}Ge. Germanium detectors are the central theme of this dissertation. The first part describes the implementation, testing, and optimisation of Monte Carlo simulations of germanium spectrometers, intensively involved in the selection of low-radioactivity materials. The simulations are essential for evaluations of the gamma ray measurements. The second part concerns the development and validation of an active background suppression technique based on germanium detector signal shape analysis. This was performed for the first time using a BEGe-type detector, which features a small read-out electrode. As a result of this work, BEGe is now one of the two detector technologies included in research and development for the second phase of the GERDA experiment. A suppression of major GERDA backgrounds is demonstrated, with (0.93{+-}0.08)% survival probability for events from {sup 60}Co, (21{+-}3)% for {sup 226}Ra, and (40{+-}2)% for {sup 228}Th. The acceptance of {sup 228}Th double escape events, which are analogous to double beta decay, was kept at (89{+-}1)%. (orig.)

  15. Pulse shapes and surface effects in segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lenz, Daniel

    2010-03-24

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  16. In-Situ Cleaning, Passivation, Functionalization, and Atomic Layer Deposition on Germanium and Silicon-Germanium

    Science.gov (United States)

    Kaufman-Osborn, Tobin Adar

    In recent years, germanium (Ge) and silicon-germanium (SiGe) have drawn significant interest as replacements of conventional silicon in the search for alternative materials for use in complementary metal-oxide-semiconductor (CMOS) devices due to their high electron and hole mobilities. In order to effectively implement Ge or SiGe as a replacement for silicon, two major challenges must be overcome: non-disruptive cleaning and surface passivation/functionalization. As electrical devices are increasingly scaled, it becomes especially crucial to effectively clean each unit cell on the Ge/SiGe surface without causing major disruption or damage to the surface. If air-induced defects or contaminants persist on the surface after cleaning, these defect sites may be un-reactive for functionalization and thereby will hinder device performance and/or the ability to aggressively scale device size. If a cleaning method is too aggressive leaving a rough or disordered surface, this can lower the mobility at the interface which will worsen device performance. For these reasons, it is necessary to develop a non-disruptive cleaning process that cleans each unit cell leaving a flat, ordered, and reactive surface. Once the Ge or SiGe surface is cleaned, in order to achieve a good electrical quality interface and a high nucleation density on the surface, all surface atoms must be passivated and functionalized allowing for aggressive device scaling. The interface must remain electrically passive in order to not inhibit electrical performance of the device. This study uses scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy (XPS) to develop and analyze a completely in-situ non-disruptive cleaning method of the Ge surface using H2O2(g) and atomic hydrogen. After cleaning, the Ge or SiGe surface is passivated and functionalized using H2O2(g) as a method to improve upon the conventional H2O(g) passivation method by more than

  17. Treatment of TiO2 with COOH-functionalized germanium nanoparticles to enhance the photocurrent of dye-sensitized solar cells.

    Science.gov (United States)

    Kim, Chang-Ho; Ha, Eun-Sung; Baik, Hionsuck; Kim, Kang-Jin

    2011-03-01

    A dye-sensitized solar cell (DSSC) containing a TiO(2) film treated with COOH-functionalized germanium nanoparticles (Ge-COOH Nps) exhibited a higher short-circuit photocurrent density (J(sc); 15.4 mA cm(-2)) compared to the corresponding untreated DSSC (13.4 mA cm(-2)) using N719 and a 12 μm thick TiO(2) film at 100 mW cm(-2). The amount of N719 attached to the treated TiO(2) film was 21% greater than that attached to the untreated TiO(2) film. Enhancement of the J(sc) value by 15% was attributed mostly to an intramolecular charge transfer from N719 attached to the Ge-COOH Nps to the TiO(2) conduction band through the Ge-COOH Nps.

  18. Measurements of thermal characteristics in silicon germanium un-cooled micro-bolometers

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, Mario; Torres, Alfonso; Kosarev, Andrey [National Institute for Astrophysics, Optics and Electronics, P.O. Box 51 and 216, Z.P. 7200 Puebla (Mexico); Ambrosio, Roberto; Mireles, Jose [Universidad Autonoma de Ciudad Juarez, Electrical Department, Av. Del Charro 450 N, Z.P. 32310, C. J., Chihuahua (Mexico); Garcia, Maria [Benemerita Universidad Autonoma de Puebla, Physics Department, Av. San Claudio S/N Z.P. 72570 Puebla (Mexico)

    2010-04-15

    We present a study of the thermal characteristics of an infrared detector (un-cooled micro-bolometer), based on an amorphous silicon germanium film (a-Si{sub x}Ge{sub y}:H), deposited by plasma at low temperature ({proportional_to} 300 C) and compatible with the standard CMOS technology. These films have been studied due to their high performance characteristics as high activation energy (E{sub a}{approx} 0.37 eV), high temperature coefficient of resistance (TCR{approx} -0.047 K{sup -1}) and moderate room temperature conductivity ({sigma}{sub RT}{approx} 2x10{sup -5}{omega} cm), which provides a moderate pixel resistance (R{sub cell}{approx}3.5x10{sup 8}{omega}). We have used two simple methods to calculate the thermal characteristics of the micro-bolometer. The thermal conductance (G{sub th}) has been obtained from the electrical I(U) characteristics in the range where self heating due to bias is not presented. The temperature dependence of the electrical resistance and as well the temperature dependence of the thermal resistance have been obtained by measuring the I(U) characteristics in the device at different temperature values. Finally the results of both methods have been compared. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Characterization of Ge-nanocrystal films with photoelectron spectroscopy

    CERN Document Server

    Bostedt, C; Willey, T M; Nelson, A J; Franco, N; Möller, T; Terminello, L J

    2003-01-01

    The Ge 3d core-levels of germanium nanocrystal films have been investigated by means of photoelectron spectroscopy. The experiments indicate bulk-like coordinated atoms in the nanocrystals and suggest structured disorder on the nanoparticle surface. The results underline the importance of the surface on the overall electronic structure of this class of nanostructured materials.

  20. An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lingen; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

    2016-07-15

    Highlights: • An environmental friendly vacuum reduction metallurgical process is proposed. • Rare and valuable metal germanium from coal fly ash is recycled. • Residues are not a hazardous material and can be further recycled. • A germanium recovery ratio of 94.64% is obtained in pilot scale experiments. - Abstract: The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173 K and 10 Pa with 10 wt% coke addition for 40 min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473 K, 1–10 Pa and heating time 40 min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes.

  1. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Classen, Nathan Robert [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular β C-H insertion mechanism.

  2. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Nathan Robert Classen

    2002-12-31

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular {beta} C-H insertion mechanism.

  3. Diffusion of n-type dopants in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Department of Materials, Imperial College, London SW7 2AZ (United Kingdom); Bracht, H., E-mail: bracht@uni-muenster.de [Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany)

    2014-03-15

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

  4. Long-term radiation damage to a spaceborne germanium spectrometer

    CERN Document Server

    Kurczynski, P; Hull, E L; Palmer, D; Harris, M J; Seifert, H; Teegarden, B J; Gehrels, N; Cline, T L; Ramaty, R; Sheppard, D; Madden, N W; Luke, P N; Cork, C P; Landis, D A; Malone, D F; Hurley, K

    1999-01-01

    The Transient Gamma-Ray Spectrometer aboard the Wind spacecraft in deep space has observed gamma-ray bursts and solar events for four years. The germanium detector in the instrument has gradually deteriorated from exposure to the approx 10 sup 8 p/cm sup 2 /yr(>100 MeV) cosmic-ray flux. Low-energy tailing and loss of efficiency, attributed to hole trapping and conversion of the germanium from n- to p-type as a result of crystal damage, were observed. Raising the detector bias voltage ameliorated both difficulties and restored the spectrometer to working operation. Together, these observations extend our understanding of the effects of radiation damage to include the previously unsuccessfully studied regime of long-term operation in space. (author)

  5. Environmental applications for an intrinsic germanium well detector

    Energy Technology Data Exchange (ETDEWEB)

    Stegnar, P.; Eldridge, J.S.; Teasley, N.A.; Oakes, T.W.

    1983-01-01

    The overall performance of an intrinsic germanium well detector for /sup 125/I measurements was investigated in a program of environmental surveillance. Concentrations of /sup 125/I and /sup 131/I were determined in thyroids of road-killed deer showing the highest activities of /sup 125/I in the animals from the near vicinity of Oak Ridge National Laboratory. This demonstrates the utility of road-killed deer as a bioindicator for radioiodine around nuclear facilities. 6 refs., 2 figs., 3 tabs.

  6. Massive silicon or germanium detectors at cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dip. Fisica dell' Universita di Ferrara and INFN, via del Paradiso 12, 44100 Ferrara (Italy); Bressi, G. [INFN, sez.Pavia, Via U. Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, sez. Padova, Via Marzolo 8, 35131 Padova (Italy); Feltrin, E. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)]. E-mail: feltrin@lnl.infn.it; Galeazzi, G. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)

    2006-11-30

    Several massive silicon and germanium home-made detectors, working at cryogenic temperature, have been studied. They are the benchmarking schemes to check the possibility of realizing a semiconductor time projection chamber that could have various interesting applications in weak interaction problems. Reported here are the first results on investigations of charge collection efficiency and metal-semiconductor contact hardness. The leakage current, total depletion voltage and alpha or gamma spectroscopy are presented.

  7. Diffusion of tin in germanium: A GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-10-18

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  8. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  9. Strain-induced changes to the electronic structure of germanium

    KAUST Repository

    Tahini, H. A.

    2012-04-17

    Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

  10. Ameliorating neutron damage in orthogonal-strip planar germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, E.G., E-mail: Emily_Jackson@student.uml.edu [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Hull, E.L. [PHDS Company, 3011 Amherst Road, Knoxville, TN 37921 (United States); Lister, C.J. [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Pehl, R.H. [PHDS Company, 3011 Amherst Road, Knoxville, TN 37921 (United States)

    2015-02-21

    The segmentation of the electrodes of germanium detectors facilitates gamma-ray imaging and tracking. Replacing the traditional n-type lithium drifted contact is a key to finer segmentation. Amorphous-germanium is a promising alternative contact technology, and large, highly segmented detectors have been fabricated. One factor in adopting any new detector technology is its robustness in hostile environments. Therefore, to explore the effects of neutron damage on position sensitive amorphous-contact germanium gamma-ray detectors and investigate methods for mitigation and repair of damage, two detectors were intentionally exposed to a non-uniform neutron fluence of greater than 4(1) ×10{sup 9} n/cm{sup 2} produced in the {sup 7}Li(p, n){sup 7}Be reaction at the UMass Lowell Van-de-Graaff accelerator. Post-irradiation tests were made on the counters by varying the electric field, the charge deposition rate, the operating temperature, and utilizing various annealing cycles in order to ascertain the robustness of their performance after irradiation.

  11. Alternative materials for next-generation transistors: High-k/germanium-based MOSFET

    Science.gov (United States)

    Hsueh, Chein-Lan

    Electronic devices that make up 99% of the computer processor and memory market are based on silicon (semiconductor) and silicon dioxide (insulator) technology. Unfortunately the key transistor gate stack structure within the "traditional" technology has reached an intrinsic physical scaling limit; the ultrathin gate oxide, already at 1nm thickness, cannot be made thinner without resulting in an intolerably high leakage current and reduced drive current. This limitation can be avoided by replacing the thin gate dielectric with a thicker film of an alternative material with a permittivity higher than that of SiO2, an accomplishing that has been realized in production just as this thesis goes to press. To further increase device performance, replacing the Si semiconductor with germanium as an alternative channel material is an attractive option for its high mobility and narrow band gap. However, the lack of a stable insulating oxide with high quality electrical properties prevents the fabrication of competitive Ge-based metal oxide semiconductor field effect transistors (MOSFETs). This dissertation reports the study of potential future-generation transistors with high-k dielectrics (HfO2 and Al2O3) on Ge substrates. A brief review of current research and development is first given followed by an introduction of the thin film characterization techniques used in this work. Various cleaning treatments as well as surface passivation methods using wet chemistry have been investigated on Ge substrates. Next, thin high-k dielectric films of HfO2 and Al2O3 have been deposited on Ge using atomic layer deposition (ALD). ALD permits films to be grown with monolayer control and excellent film conformality. Physical, chemical and electrical characterization has been performed on the multilayer film structures. Optimization of the film growth has been developed and we have demonstrated high quality with Au/HfO2/Ge nMOS devices. Capacitance-voltage electrical measurements show that

  12. Thin film polycrystalline silicon photoelectric converter and fabricating method; Hakumaku takkesho shirikon koden henkan sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, K. [Kobe (Japan); Suzuki, T. [Kobe (Japan); Yoshimi, M. [Kobe (Japan)

    1995-04-07

    This invention relates to a fabricating method for a thin film polycrystalline silicon photoelectric converter which has a large area and can be produced at low cost. Successive formation of mono-conductive polycrystalline silicon thin film and reverse conducting polycrystalline silicon thin film on a translucent substrate requires no vapor phase epitaxial growth, and the film formation temperature for silicon thin film can be lowered. Orientation of the monocrystalline silicon thin film to any of the surface bearings of (100), (111), and (110) results in the function of determining the orientation of the reverse conducting polycrystalline silicon thin film formed thereon. This orientation is effective to obtain excellent characteristics, and results in effective surface orientation of the entire power generating area. In addition, the supporting substrate and the surface protective film of the solar cell can be combined by orienting the translucent substrate side to the light incident side. 2 figs., 1 tab.

  13. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    Science.gov (United States)

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  14. Self-assembly of microscopic chiplets at a liquid-liquid-solid interface forming a flexible segmented monocrystalline solar cell.

    Science.gov (United States)

    Knuesel, Robert J; Jacobs, Heiko O

    2010-01-19

    This paper introduces a method for self-assembling and electrically connecting small (20-60 micrometer) semiconductor chiplets at predetermined locations on flexible substrates with high speed (62500 chips/45 s), accuracy (0.9 micrometer, 0.14 degrees), and yield (> 98%). The process takes place at the triple interface between silicone oil, water, and a penetrating solder-patterned substrate. The assembly is driven by a stepwise reduction of interfacial free energy where chips are first collected and preoriented at an oil-water interface before they assemble on a solder-patterned substrate that is pulled through the interface. Patterned transfer occurs in a progressing linear front as the liquid layers recede. The process eliminates the dependency on gravity and sedimentation of prior methods, thereby extending the minimal chip size to the sub-100 micrometer scale. It provides a new route for the field of printable electronics to enable the integration of microscopic high performance inorganic semiconductors on foreign substrates with the freedom to choose target location, pitch, and integration density. As an example we demonstrate a fault-tolerant segmented flexible monocrystalline silicon solar cell, reducing the amount of Si that is used when compared to conventional rigid cells.

  15. Photovoltaic cells with efficiency exceeding 10% using monocrystalline CuInSe{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yip, L.S.; Shih, I. [McGill Univ., Montreal, Quebec (Canada). Electrical Engineering Dept.

    1994-12-31

    Photovoltaic cells with the structure of ZnO/CdS/CuInSe{sub 2} have been fabricated on single crystal CuInSe{sub 2} substrates obtained from p-type Bridgman-grown ingots. A chemical bath method was used to deposit the CdS film onto the abrasively-polished CuInSe{sub 2} substrates while r.f. sputtering was employed for the ZnO deposition. It was found that the performance of these cells were dominated by the high density of surface defects, which could be reduced by a substrate annealing prior to the CdS deposition. A conversion efficiency of 10.3% at about AM 1.5 under the sun has been achieved on ells with an effective area of 8 mm{sup 2}. Anti-reflection coating was not used in the present case.

  16. Luminescence properties of Lu2O3: Tb film prepared by Pechini sol-gel method

    Science.gov (United States)

    Shen, Siqing; Wang, Jian; Xu, Zhibin; Xie, Jianjun; Shi, Ying

    2011-02-01

    Uniform and crack free Tb3+ doped lutetium oxide (Lu2O3:Tb) films were prepared by Pechini sol-gel method combined with the spin-coating technique. The influence of the different substrate (monocrystalline silicon (111) and silica glass) and atmosphere (N2 and Air) on the luminescence properties of films was investigated. According to the emission spectra, we found that the luminous intensity was higher on silica glass substrate. Moreover, it was found that the luminous intensity calcined in N2 was higher almost twice as that calcined in air.

  17. Laser process for extended silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hessmann, M.T., E-mail: hessmann@zae.uni-erlangen.de [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Kunz, T.; Burkert, I.; Gawehns, N. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Schaefer, L.; Frick, T.; Schmidt, M. [Bayerisches Laserzentrum, Konrad-Zuse-Str 2-6, 91052 Erlangen (Germany); Meidel, B. [Schott Solar AG, Carl-Zeiss-Strasse 4, 63755 Alzenau (Germany); Auer, R. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Brabec, C.J. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Chair VI - Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen (Germany)

    2011-10-31

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  18. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  19. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    Science.gov (United States)

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  20. Infrared microspectroscopic imaging using a large radius germanium internal reflection element and a focal plane array detector.

    Science.gov (United States)

    Patterson, Brian M; Havrilla, George J; Marcott, Curtis; Story, Gloria M

    2007-11-01

    Previously, we established the ability to collect infrared microspectroscopic images of large areas using a large radius hemisphere internal reflection element (IRE) with both a single point and a linear array detector. In this paper, preliminary work in applying this same method to a focal plane array (FPA) infrared imaging system is demonstrated. Mosaic tile imaging using a large radius germanium hemispherical IRE on a FPA Fourier transform infrared microscope imaging system can be used to image samples nearly 1.5 mm x 2 mm in size. A polymer film with a metal mask is imaged using this method for comparison to previous work. Images of hair and skin samples are presented, highlighting the complexity of this method. Comparisons are made between the linear array and FPA methods.

  1. HEROICA: an Underground Facility for the Fast Screening of Germanium Detectors

    CERN Document Server

    Andreotti, E; Maneschg, W; Barros, N; Benato, G; Brugnera, R; Costa, F; Falkenstein, R; Guthikonda, K K; Hegai, A; Hemmer, S; Hult, M; Jaenner, K; Kihm, T; Lehnert, B; Liao, H; Lubashevskiy, A; Lutter, G; Marissens, G; Modenese, L; Pandola, L; Reissfelder, M; Sada, C; Salathe, M; Schmitt, C; Schulz, O; Schwingenheuer, B; Turcato, M; Ur, C; von Sturm, K; Wagner, V; Westermann, J

    2013-01-01

    An infrastructure to characterize germanium detectors has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30km from the underground test site. Therefore, HADES is used both for storage of the crystals over night...

  2. Femtosecond Laser Processing of Germanium: An Ab Initio Molecular Dynamics Study

    CERN Document Server

    Ji, Pengfei

    2016-01-01

    An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) containing 64 germanium atoms with an ordered arrangement of 1.132 nm in each dimension, the femtosecond laser processing is simulated by imposing the Nose Hoover thermostat to the electronic subsystem lasting for ~100 fs and continuing with microcanonical ensemble simulation of ~200 fs. The simulation results show solid, liquid and gas phases of germanium under adjusted intensities of the femtosecond laser irradiation. We find the irradiated germanium distinguishes from the usual germanium crystal by analyzing their melting and dynamic properties.

  3. Suspended germanium cross-shaped microstructures for enhancing biaxial tensile strain

    Science.gov (United States)

    Ishida, Satomi; Kako, Satoshi; Oda, Katsuya; Ido, Tatemi; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-01

    We fabricate a suspended germanium cross-shaped microstructure to biaxially enhance residual tensile strain using a germanium epilayer directly grown on a silicon-on-insulator substrate. Such a suspended germanium system with enhanced biaxial tensile strain will be a promising platform for incorporating optical cavities toward the realization of germanium lasers. We demonstrate systematic control over biaxial tensile strain and photoluminescence peaks by changing structural geometry. The photoluminescence peaks corresponding to the direct recombination between the conduction Γ valley and two strain-induced separated valence bands have been clearly assigned. A maximum biaxial strain of 0.8% has been achieved, which is almost half of that required to transform germanium into a direct band-gap semiconductor.

  4. Infrared absorption study of neutron-transmutation-doped germanium

    Science.gov (United States)

    Park, I. S.; Haller, E. E.

    1988-01-01

    Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

  5. Resonance-enhanced waveguide-coupled silicon-germanium detector

    CERN Document Server

    Alloatti, Luca

    2016-01-01

    A photodiode with 0.55$\\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  6. Homo and hetero epitaxy of Germanium using isobutylgermane

    Energy Technology Data Exchange (ETDEWEB)

    Attolini, G. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy); Bosi, M. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy)], E-mail: bosi@imem.cnr.it; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy); Timo, G. [CESI Ricerca S.P.A., Via Rubattino 54, 20134 Milano (Italy)], E-mail: Gianluca.Timo@cesiricerca.it

    2008-11-03

    Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH{sub 3} as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness.

  7. Point defect engineering strategies to retard phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  8. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...... to an enhanced self- and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I ) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI...

  9. Effect of germanium dioxide on growth of Spirulina platensis

    Science.gov (United States)

    Cao, Ji-Xiang

    1996-12-01

    This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

  10. Cryostat for Ultra-low-energy Threshold Germanium Spectrometers

    CERN Document Server

    Aalseth, Craig E; Fast, James E; Hossbach, Todd W; Orrell, John L; Overman, Cory T; Vandevender, Brent A

    2012-01-01

    This paper presents progress on the development of a cryostat intended to improve upon the low-energy threshold (below 0.5 keV) of p-type point contact germanium gamma-ray spectrometers. Ultra-low energy thresholds are important in the detection of low-energy nuclear recoils, an event class relevant to both dark matter direct detection and measurement of coherent neutrino-nucleus scattering. The cryostat design, including a thermal and electrical-field model, is given. A prototype cryostat has been assembled and data acquired to evaluate its vacuum and thermal performance.

  11. Uniaxially stressed germanium with fundamental direct band gap

    OpenAIRE

    Geiger, R.; Zabel, T.; Marin, E; Gassenq, A.; Hartmann, J.-M.; Widiez, J.; Escalante, J.; Guilloy, K.; Pauc, N.; Rouchon, D.; Diaz, G. Osvaldo; Tardif, S; Rieutord, F.; Duchemin, I.; Niquet, Y. -M.

    2015-01-01

    We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with n...

  12. Phonon Quasidiffusion in Cryogenic Dark Matter Search Large Germanium Detectors

    CERN Document Server

    Leman, S W; McCarthy, K A; Pyle, M; Resch, R; Sadoulet, B; Sundqvist, K M; Brink, P L; Cherry, M; Silva, E Do Couto E; Figueroa-Feliciano, E; Mirabolfathi, N; Serfass, B; Tomada, A

    2011-01-01

    We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare data obtained in two different detector types, with different phonon sensor area coverage, with results from a Monte Carlo. The Monte Carlo includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels.

  13. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals

    CERN Document Server

    Stephenson, Chad A; Qi, Meng; Penninger, Michael; Schneider, William; Wistey, Mark A

    2014-01-01

    Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with HSE06 hybrid functionals and spin-orbit coupling to study the band structure behavior in the absence of defects. Contrary to Vegard's law, the conduction band minimum at k=0 is consistently found to decrease with increasing C content, while L and X valleys remain nearly unchanged. A vanishing bandgap was observed for all alloys with x>0.017. Conduction bands deviate from a constant-potential band anticrossing model except near the center of the Brillouin zone.

  14. Nanocrystalline germanium nip solar cells with spectral sensitivities extending into 1450 nm

    Science.gov (United States)

    Li, Chang; Ni, Jian; Sun, Xiaoxiang; Wang, Xinyu; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2017-02-01

    To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap hydrogenated nanocrystalline germanium (nc-Ge:H) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition at a low temperature of 180 °C. While the incubation layer of the nc-Ge:H was reduced to less than 5 nm by using the ultra-high hydrogen dilution, the negative photoconductivity behavior was still observed as the thickness of nc-Ge:H up to 30 nm. Therefore, as the best candidate for solar cells application, the nc-Ge:H (20 nm)/nc-Si:H (10 nm) periodic multilayer structure was prepared and used as the absorption layer of nc-Ge:H nip solar cells. More importantly, the spectral sensitivities extending into the wavelength of 1450 nm were achieved in the nc-Ge:H nip solar cells. In addition, the annealing for the nc-Ge:H nip solar cells was carried out. While the overall short circuit current density of the device is improved after 500 °C annealing, the spectral sensitivities in the infrared region is decreased due to the the coalescence of Ge crystallites.

  15. Development of amorphous silicon-germanium-alloys for stacked solar cells; Entwicklung von amorphen Silizium-Germanium-Legierungen fuer den Einsatz in Stapelsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Lundszien, D.

    2001-01-01

    To obtain high efficiency silicon based thin film solar cells, the concept of stacked solar cells is routinely used. The use of component cells with different optical bandgaps provides a better utilization of the solar spectrum. In a stacked cell structure, a high quality narrow bandgap material is needed for the active layer of the bottom cell. Amorphous silicon-germanium-alloys (a-SiGe:H) have been successfully employed because of their tunable optical bandgap E{sub G} between 1.8 eV (a-Si:H) and 1.1 eV (a-Ge:H). Considerable effort has been put into the development of a-SiGe:H. Still, with increasing Ge content, the material shows a characteristic deterioration of its electronic properties, like an exponential increase of the defect density, thus counteracting the gain in absorption obtained for higher Ge contents. It is the defect density which has the dominant influence on carrier transport and cell efficiency by affecting the mobility lifetime product and the electric field in the devices. The performance of a-SiGe:H pin solar cells with a wide range of Ge contents i.e. a wide range of optical band gaps (E{sub G}=1.3 to 1.6 eV) are compared. It is demonstrated how the deterioration of the material properties can be overcome by careful adjustment of the device design and the use of highly reflective ZnO/Ag back contacts. (orig.)

  16. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  17. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  18. Efficiency of the monocrystalline photovoltaic modules in conversion solar radiation into electrical energy; Eficiencia de modulos fotovoltaicos monocristalinos na conversao de radiacao solar em energia eletrica

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Carliane Diniz e [Universidade Estadual do Maranhao (UEMA), Sao Luis, MA (Brazil). Dept. de Engenharia Agricola], Email: carlianeds@yahoo.com.br; Seraphim, Odivaldo Jose [Universidade Estadual Paulista (FCA/UNESP), SP (Brazil). Fac. de Ciencias Agronomicas. Dept. de Engenharia Rural], Email: seraphim@fca.unesp.br

    2006-07-01

    With the scarcity of the conventional sources of energy production, other options must be considered, as the use of energy resources you renewed, that they offer to multiple advantages. One of the options to the supply of energy of the agricultural users is the photovoltaic solar systems for the local promotion of the quality of life. The objective of this study was to evaluate two marks of monocrystalline photovoltaic modules in different angles of inclination. The modules had presented low efficiency of conversion in conditions of field for incident solar radiation. (author)

  19. Germanium electroabsorption devices on silicon for optical interconnects

    Science.gov (United States)

    Kuo, Yu-Hsuan; Miller, David A. B.; Harris, James S.

    2006-02-01

    Monolithic integration of both electronic and optic components into a silicon-based platform will provide high-speed optical interconnects and solve the power-bandwidth limitations. However, the lack of strong optical effects in silicon has limited the progress in the transmitter-end applications. Recently our research had demonstrated strong quantum-confined Stark effect (QCSE) in germanium quantum-well modulators on silicon. This first strong physical mechanism for group-IV photonics has a comparable behavior to III-V material systems. With proper quantum well structure design, we also demonstrated QCSE in C-band for long distance communications with CMOS-operational temperatures. The device fabrication is also compatible with standard silicon chip processes. Since the QCSE, a type of electroabsorption effect, requires much shorter optical length, it is suitable for device miniaturizations and possible for use in both lateral and vertical modulator configurations. Moreover, silicon-germanium electroabsorption modulators are inherently photodetectors, this advantage will enable efficient transmitter/receiver applications for optical interconnects.

  20. Superconductivity and unexpected chemistry of germanium hydrides under pressure

    Science.gov (United States)

    Davari Esfahani, M. Mahdi; Oganov, Artem R.; Niu, Haiyang; Zhang, Jin

    2017-04-01

    Following the idea that hydrogen-rich compounds might be high-Tc superconductors at high pressures, and the very recent breakthrough in predicting and synthesizing hydrogen sulfide with record-high Tc=203 K , an ab initio evolutionary algorithm for crystal structure prediction was employed to find stable germanium hydrides. In addition to the earlier structure of germane with space group Ama2, we propose a C2/m structure, which is energetically more favorable at pressures above 278 GPa (with inclusion of zero-point energy). Our calculations indicate that the C2/m phase of germane is a superconductor with Tc=67 K at 280 GPa. Germane is found to become thermodynamically unstable to decomposition to hydrogen and the compound Ge3H11 at pressures above 300 GPa. Ge3H11 with space group I 4 ¯m 2 is found to become stable at above 285 GPa with Tc=43 K . We find that the pressure-induced phase stability of germanium hydrides is distinct from analogous isoelectronic systems, e.g., Si hydrides and Sn hydrides. Superconductivity stems from large electron-phonon coupling associated with the wagging, bending, and stretching intermediate-frequency modes derived mainly from hydrogen.

  1. Materials and Fabrication Issues for Large Machined Germanium Immersion Gratings

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmenko, P J; Davis, P J; Little, S L; Hale, L C

    2006-05-22

    LLNL has successfully fabricated small (1.5 cm{sup 2} area) germanium immersion gratings. We studied the feasibility of producing a large germanium immersion grating by means of single point diamond flycutting. Our baseline design is a 63.4o blaze echelle with a 6 cm beam diameter. Birefringence and refractive index inhomogeneity due to stresses produced by the crystal growth process are of concern. Careful selection of the grating blank and possibly additional annealing to relieve stress will be required. The Large Optics Diamond Turning Machine (LODTM) at LLNL is a good choice for the fabrication. It can handle parts up to 1.5 meter in diameter and 0.5 meter in length and is capable of a surface figure accuracy of better than 28 nm rms. We will describe the machine modifications and the machining process for a large grating. A next generation machine, the Precision Optical Grinder and Lathe (POGAL), currently under development has tighter specifications and could produce large gratings with higher precision.

  2. Reduction of phosphorus diffusion in germanium by fluorine implantation

    Science.gov (United States)

    El Mubarek, H. A. W.

    2013-12-01

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  3. Reduction of phosphorus diffusion in germanium by fluorine implantation

    Energy Technology Data Exchange (ETDEWEB)

    El Mubarek, H. A. W. [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-12-14

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  4. Structural and electronic properties of hybrid silicon-germanium nanosheets

    Directory of Open Access Journals (Sweden)

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  5. Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

    Science.gov (United States)

    Lee, K. S.; Yoo, D. H.; Son, G. H.; Lee, C. H.; Noh, J. H.; Han, J. J.; Yu, Y. S.; Hyung, Y. W.; Yang, J. K.; Song, D. G.; Lim, T. J.; Kim, Y. K.; Lee, S. C.; Lee, H. D.; Moon, J. T.

    2006-11-01

    Germanium ion implantation was investigated for crystallinity enhancement during solid phase epitaxial regrowth (SPE) using high current implantation equipment. Electron back-scatter diffraction(EBSD) measurement showed numerical increase of 19 percent of signal, which might be due to pre-amorphization effect on silicon layer deposited by LPCVD process with germanium ion implantation. On the other hand, electrical property such as off-leakage current of NMOS transistor degraded in specific regions of wafers, which implied non-uniform distribution of donor-type impurities into channel area. It was confirmed that arsenic atoms were incorporated into silicon layer during germanium ion implantation. Since the equipment for germanium pre-amorphization implantation(PAI) was using several source gases such as BF3 and AsH3, atomic mass unit(AMU) contamination during PAI of germanium with AMU 74 caused the incorporation of arsenic with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use germanium isotope of AMU 72 to suppress AMU contamination, however it led serious reduction of productivity because of decrease in beam current by 30 percent as known to be difference in isotope abundance. It was effective to use enriched germanium source gas with AMU 72 in order to improve productivity. Spatial distribution of arsenic impurities in wafers was closely related to hardware configuration of ion implantation equipment.

  6. 快速热处理下镍对锗单晶电学性能的影响%Effect of Nickel on the Electrical Properties of Single-Crystalline Germanium under Rapid Thermal Processing

    Institute of Scientific and Technical Information of China (English)

    梁萍兰; 郑忠云; 张存磊; 王少锋; 席珍强

    2012-01-01

    采用磁控溅射法在n-Ge表面镀镍薄膜,通过改变快速热处理时间研究镍对锗单晶的导电型号、电阻率和少子寿命的影响,以及镍在锗中的扩散行为.结果表明:镍在锗中具有向内扩散和向外扩散两种行为,并以受主状态存在,改变了锗内部的载流子的分布;775℃热处理后,镍受主完全补偿原有的施主,使锗由n型转变为p型,随着热处理时间的增加,电阻率下降,镍受主浓度增加.即使微量的镍就可以使锗的少子寿命直线下降至零点几微秒,这表明镍在锗中会引入深能级.%In this paper, nickel film is deposited on the n-type single-crystalline germanium by the magnetron sputtering, then the effects of nickel on the single-crystalline germanium are studied by changing the time of rapid thermal processing, including the electrical properties, minority carrier lifetime and diffusion behavior of nickel. The results show that in-diffusion and out-diffusion happen simultaneously, nickel behaving as an acceptor changes the carrier distribution of germanium. With the heat treatment at 775 °C, the n-type germanium changes to p-type germanium, caused by the nickel compensating the original donor. The resistivity of germanium decreases with increasing time, accordingly, the nickel concentration existing by the acceptor state increases with increasing time. Even a small quantity of nickel can rapidly decrease the minority carrier lifetime of germanium, this shows that the level caused by the nickel is deep level.

  7. 红外Ge窗口在热带雨林环境中的腐蚀特性研究%Corrosion Properties of Germanium IR Window in Tropical Rainforest Environment

    Institute of Scientific and Technical Information of China (English)

    王乔方; 字正华; 李汝劼; 谈骥; 杨静; 乐丽珠

    2014-01-01

    采用投样试验的方法,对未镀膜和镀DLC膜Ge窗口在西双版纳热带雨林环境进行试验,通过对未镀膜和镀膜Ge窗口在热带雨林环境腐蚀速率和表面形貌进行观察、分析和研究,得到热带雨林环境对未镀膜和镀DLC膜Ge窗口的腐蚀特性,对腐蚀机理进行了初步分析。%In this paper, the method of sample test vote on uncoated and coated DLC film germanium window in tropical rainforest environment to test, through the uncoated and coated DLC film germanium window in the tropical rainforest environment corrosion rate and surface morphology were observed, analysis and research, get rainforest environment on corrosion properties of uncoated and coated germanium window, on a preliminary analysis of the corrosion mechanism.

  8. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0films deposited at a wide temperature range (250°C to 600°C). Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  9. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    Science.gov (United States)

    Wei, W.-Z.; Liu, J.; Mei, D.-M.

    2016-07-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  10. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    CERN Document Server

    Wei, W -Z; Mei, D -M

    2016-01-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  11. Performance Comparison of Stion CIGS Modules to Baseline Monocrystalline Modules at the New Mexico Florida and Vermont Regional Test Centers: January 2015-December 2016.

    Energy Technology Data Exchange (ETDEWEB)

    Lave, Matthew Samuel [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Stein, Joshua [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Burnham, Laurie [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-01-01

    This report provides performance data and analysis for two Stion copper indium gallium selenide (CIGS) module types, one framed, the other frameless, and installed at the New Mexico, Florida and Vermont RTCs. Sandia looked at data from both module types and compared the latter with data from an adjacent monocrystalline baseline array at each RTC. The results indicate that the Stion modules are slightly outperforming their rated power, with efficiency values above 100% of rated power, at 25degC cell temperatures. In addition, Sandia sees no significant performance differences between module types, which is expected because the modules differ only in their framing. In contrast to the baseline systems, the Stion strings showed increasing efficiency with increasing irradiance, with the greatest increase between zero and 400 Wm -2 but still noticeable increases at 1000 Wm -2 . Although baseline data availability in Vermont was spotty and therefore comparative trends are difficult to discern, the Stion modules there may offer snow- shedding advantages over monocrystalline-silicon modules but these findings are preliminary.

  12. Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

    Indian Academy of Sciences (India)

    S Balaji; S Mohan; D V S Muthu; A K Sood

    2003-10-01

    Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

  13. Characteristics of GRIFFIN high-purity germanium clover detectors

    Science.gov (United States)

    Rizwan, U.; Garnsworthy, A. B.; Andreoiu, C.; Ball, G. C.; Chester, A.; Domingo, T.; Dunlop, R.; Hackman, G.; Rand, E. T.; Smith, J. K.; Starosta, K.; Svensson, C. E.; Voss, P.; Williams, J.

    2016-06-01

    The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analog and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80-3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3 in . × 3 in . NaI detector of 41(1)% at 1.3 MeV.

  14. Modeling of germanium detector and its sourceless calibration

    Directory of Open Access Journals (Sweden)

    Steljić Milijana

    2008-01-01

    Full Text Available The paper describes the procedure of adapting a coaxial high-precision germanium detector to a device with numerical calibration. The procedure includes the determination of detector dimensions and establishing the corresponding model of the system. In order to achieve a successful calibration of the system without the usage of standard sources, Monte Carlo simulations were performed to determine its efficiency and pulse-height response function. A detailed Monte Carlo model was developed using the MCNP-5.0 code. The obtained results have indicated that this method represents a valuable tool for the quantitative uncertainty analysis of radiation spectrometers and gamma-ray detector calibration, thus minimizing the need for the deployment of radioactive sources.

  15. Young’s modulus of [111] germanium nanowires

    Directory of Open Access Journals (Sweden)

    M. Maksud

    2015-11-01

    Full Text Available This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs. When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  16. Young’s modulus of [111] germanium nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Maksud, M.; Palapati, N. K. R.; Subramanian, A., E-mail: asubramanian@vcu.edu [Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Yoo, J. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Harris, C. T. [Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2015-11-01

    This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  17. Specific features of phase transformations in germanium monotelluride

    Energy Technology Data Exchange (ETDEWEB)

    Bigvava, A.D.; Gabedava, A.A.; Kunchuliya, Eh.D.; Shvangiradze, R.R.

    1981-12-01

    Phase transformations in germanium monotelluride are studied using DRON-0.5 and DRON-1 plants with high-temperature chamber GPVT-1500 at Cu, Ksub(..cap alpha..) radiation. It is shown that in the whole homogeneity range ..cap alpha.. GeTe is a metastable phase which is formed under the conditions of fast cooling of alloy from temperatures >=Tsub(cub) (temperature of transition in cubic crystal system). An equilibrium ..gamma..-phase is obtained by annealing of dispersed powders and metal-ceramic specimens of alloys with 50.3; 50.6; 50.9 at % Te. Lattice parameters of rhombic ..gamma..-phase do not depend on tellurium content in initial ..cap alpha..- phase. ..cap alpha --> gamma.. transformation is observed at any temperature less than Tsub(cub) with the change of alloy composition, namely tellurium precipitation. ..gamma..-phase transforms into ..beta.. at higher temperatures than ..cap alpha..-phase.

  18. Laser-initiated explosive electron emission from flat germanium crystals

    Science.gov (United States)

    Porshyn, V.; Mingels, S.; Lützenkirchen-Hecht, D.; Müller, G.

    2016-07-01

    Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration tlaser = 3.5 ns and photon energy hν = 0.54-5.90 eV) and under DC voltages 1 MW/cm2 corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hν-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out first direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ˜0.8 eV.

  19. The impact of polishing on germanium-on-insulator substrates

    Institute of Scientific and Technical Information of China (English)

    Lin Wang; Ruan Yujiao; Chen Songyan; Li Cheng; Lai Hongkai; Huang Wei

    2013-01-01

    We prepared germanium-on-insulator (GOI) substrates by using Smart-CutTM and wafer bonding technology.The fabricated GOI is appropriate for polishing due to a strong bonding strength (2.4 MPa) and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing (CMP) systematically,and an appropriate polishing method-mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.

  20. Gamma ray polarimetry using a position sensitive germanium detector

    CERN Document Server

    Kroeger, R A; Kurfess, J D; Phlips, B F

    1999-01-01

    Imaging gamma-ray detectors make sensitive polarimeters in the Compton energy regime by measuring the scatter direction of gamma rays. The principle is to capitalize on the angular dependence of the Compton scattering cross section to polarized gamma rays and measure the distribution of scatter directions within the detector. This technique is effective in a double-sided germanium detector between roughly 50 keV and 1 MeV. This paper reviews device characteristics important to the optimization of a Compton polarimeter, and summarizes measurements we have made using a device with a 5x5 cm active area, 1 cm thickness, and strip-electrodes on a 2 mm pitch.

  1. Exceptional transport property in a rolled-up germanium tube

    Science.gov (United States)

    Guo, Qinglei; Wang, Gang; Chen, Da; Li, Gongjin; Huang, Gaoshan; Zhang, Miao; Wang, Xi; Mei, Yongfeng; Di, Zengfeng

    2017-03-01

    Tubular germanium (Ge) resistors are demonstrated by rolling-up thin Ge nanomembranes (NMs, 50 nm in thickness) with electrical contacts. The strain distribution of rolled-up Ge microtubes along the radial direction is investigated and predicted by utilizing micro-Raman scattering spectroscopy with two different excitation lasers. Electrical properties are characterized for both unreleased GeNMs and released/rolled-up Ge microtubes. The conductivities of GeNMs significantly decrease after rolling-up into tubular structures, which can be attributed to surface charging states on the conductance, band bending, and piezo-resistance effect. When illuminated with a light source, facilitated by the suppressed dark current of rolled-up Ge tubes, the corresponding signal-to-noise ratio can be dramatically enhanced compared with that of planar GeNMs.

  2. Wide band polarizer with suspended germanium resonant grating

    Institute of Scientific and Technical Information of China (English)

    Wugang Cao; Jianyong Ma; Changhe Zhou

    2012-01-01

    An ultra broad band polarizer that operates in the telecommunication wavelength band is proposed.This device,which consists of a single suspended germanium resonant grating layer,is designed using the inverse mathematical method and the rigorous vector diffraction theory.Calculated results indicate that the ultra broad band polarizer exhibits extremely high reflection (R > 99%) for TE polarization light and high transmission (T > 99%) for TM polarization at the wavelength range greater than 300 nm,and it has an extinction ratio of approximately 1 000 at the 1 550-nm central wavelength.The results of the rigorous coupled wave analysis indicate that the extremely wide band property of the TE polarization is caused by the excitation of strong modulation guided modes in the design wavelength range.

  3. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  4. Anomalous compression behavior of germanium during phase transformation

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaozhi [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Tan, Dayong [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Guangzhou Institute of Geochemistry, Chinese Academic of Sciences, Guangzhou 510640 (China); Ren, Xiangting [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Yang, Wenge, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); He, Duanwei, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Mao, Ho-Kwang [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States)

    2015-04-27

    In this article, we present the abnormal compression and plastic behavior of germanium during the pressure-induced cubic diamond to β-tin structure transition. Between 8.6 GPa and 13.8 GPa, in which pressure range both phases are co-existing, first softening and followed by hardening for both phases were observed via synchrotron x-ray diffraction and Raman spectroscopy. These unusual behaviors can be interpreted as the volume misfit between different phases. Following Eshelby, the strain energy density reaches the maximum in the middle of the transition zone, where the switch happens from softening to hardening. Insight into these mechanical properties during phase transformation is relevant for the understanding of plasticity and compressibility of crystal materials when different phases coexist during a phase transition.

  5. Oxygen-related point defects in silicon and germanium

    CERN Document Server

    Coutinho, J P A

    2001-01-01

    A modelling study of several oxygen related defects in silicon and germanium crystals is reported. These include radiation and thermally activated defects. The problem of thermal donor formation is revised in detail. Here we report the properties of the simple interstitial oxygen complexes, their diffusivity and clustering properties, culminating with a novel model for the thermal double donor defects (TDD). The model is also extended to the hydrogen-related shallow thermal donor family, STD(H). According to the model, electrons from over-coordinated oxygen atoms with a donor level lying above that of a stress-induced state, are transfered to the later. This picture is analogous to that of an externally doped quantum-dot.

  6. Towards monolithic integration of germanium light sources on silicon chips

    Science.gov (United States)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  7. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

    Science.gov (United States)

    Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.

    2016-04-01

    Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.

  8. Contribution of a germanium detector in mobile gamma-ray spectrometry. Spectral analysis and performance

    CERN Document Server

    Gutierrez, S; Bourgeois, C

    2002-01-01

    The sensitivity of the germanium semi-conductor detector is 30 times lower than that of the sodium iodide (NaI) detectors frequently used in airborne spectrometry. Its energy resolution however, is 20 times better, giving more accurate identification of radionuclides, especially when complex spectra are involved. The use of the germanium detector in mobile gamma-ray spectrometry provides a large amount of qualitative and quantitative information. In post-accident situations a germanium detector will be sufficient, and should therefore be used in preference to a NaI detector. An algorithm for detecting the total absorption peaks by studying the variations in the spectral profile of germanium gamma-ray spectra has been developed at the CEA. The use of digital filters that take into account the characteristics of the absorption peaks reduces the statistical fluctuations, making possible detection based on the analysis of the first and second derivatives. The absorption peak is then estimated by subtracting the b...

  9. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four...

  10. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  11. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate...

  12. Impurity distribution in high purity germanium crystal and its impact on the detector performance

    Science.gov (United States)

    Wang, Guojian; Amman, Mark; Mei, Hao; Mei, Dongming; Irmscher, Klaus; Guan, Yutong; Yang, Gang

    High-purity germanium crystals were grown in a hydrogen atmosphere using the Czochralski method. The axial and radial distributions of impurities in the crystals were measured by Hall effect and Photo-thermal ionization spectroscopy (PTIS). Amorphous semiconductor contacts were deposited on the germanium crystals to make detectors. Three planar detectors were fabricated from three crystals with different net carrier concentrations (1.7, 7.9 and 10x1010 cm-3). We evaluated the electrical and spectral performance of three detectors. Measurements of gamma-ray spectra from 137Cs, 241Am and 60Co sources demonstrate that the detectors have excellent energy resolution. The relationship between the impurities and detector's energy resolution was analyzed. Keywords: High-purity germanium crystal, High-purity germanium detector This work is supported by DOE grant DE-FG02-10ER46709 and the state of South Dakota..

  13. Electronic and magnetic properties of Fe and Mn doped two dimensional hexagonal germanium sheets

    Energy Technology Data Exchange (ETDEWEB)

    Soni, Himadri R., E-mail: himadri.soni@gmail.com; Jha, Prafulla K., E-mail: himadri.soni@gmail.com [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    Using first principles density functional theory calculations, the present paper reports systematic total energy calculations of the electronic properties such as density of states and magnetic moment of pristine and iron and manganese doped two dimensional hexagonal germanium sheets.

  14. Research progress of Si-based germanium materials and devices

    Science.gov (United States)

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  15. Sensitivity comparison of intrinsic germanium detectors with various efficiencies

    Energy Technology Data Exchange (ETDEWEB)

    Buker, L.M.L.

    1990-12-01

    Scientists today are being asked to measure concentrations of radionuclides at increasingly lower levels. This creates a demand for better resolution detectors with larger efficiencies that can provide the necessary sensitivity to accurately determine low levels of radioactivity. This study has acquired a large volume of empirical data for a wide range of relative efficiency germanium detectors. The purpose was to determine the sensitivity of various efficiency high-purity (P-type) germanium detectors produced by a single manufacturer. Selecting efficiency as the only variable and essentially all other variables remaining constant narrowed the field of detectors to 30. This investigation compares the response for the lower limit of detection (LLD), figure-of-merit (FOM), and minimum detectable activity (MDA) versus efficiency. In addition to the efficiency, the resolution, background, peak-to-Compton (P/C), and crystal shape of a p-type detector are of particular importance when considering the parameters of a detectors performance. A concise summary of the results is that the detector of choice for low energy measurements would be a 25% detector with resolution better than 1.8 keV FWHM for the 1.332 keV energy of Co-60. The detector of choice for energy levels greater than 500 keV would be a high efficiency low background detector. If the entire energy range is of interest, then a 70% low background detector with a high P/C and a resolution better than 1.9 keV would yield the lowest MDA and assure the most efficient counting times. 9 refs., 25 figs., 6 tabs.

  16. Radiation-electromagnetic effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1980-10-01

    An experimental study was made of the radiation-electromagnetic effect in germanium single crystals when excess carriers were generated by bombardment with ..cap alpha.. particles, protons, or x rays in magnetic fields up to 8 kOe. The source of ..cap alpha.. particles and protons was a cyclotron and x rays were provided by a tube with a copper anode. The radiation-electromagnetic emf increased linearly on increase in the magnetic field and was directly proportional to the flux of charged particles at low values of the flux, reaching saturation at high values of the flux (approx.5 x 10/sup 11/ particles .cm/sup -2/ .sec/sup -1/). In the energy range 4--40 MeV the emf was practically independent of the ..cap alpha..-particle energy. The sign of the emf was reversed when samples with a ground front surface were irradiated. Measurements of the photoelectromagnetic and Hall effects in the ..cap alpha..-particle-irradiated samples showed that a p-n junction was produced by these particles and its presence should be allowed for in investigations of the radiation-electromagnetic effect. The measured even radiation-electromagnetic emf increased quadratically on increase in the magnetic field. An investigation was made of the barrier radiation-voltaic effect (when the emf was measured between the irradiated and unirradiated surfaces). Special masks were used to produce a set of consecutive p-n junctions in germanium crystals irradiated with ..cap alpha.. particles. A study of the photovoltaic and photoelectromagnetic effects in such samples showed that the method could be used to increase the efficiency of devices utilizing the photoelectromagnetic effect.

  17. Development of silicon-germanium visible-near infrared arrays

    Science.gov (United States)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  18. Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

    OpenAIRE

    Guilloy, K.; Pauc, N.; Gassenq, A.; Niquet, Y. M.; Escalante, J. M.; Duchemin, I.; Tardif, S; Dias, G. Osvaldo; Rouchon, D.; Widiez, J.; Hartmann, J.M.; Geiger, R.; Zabel, T.; Sigg, H; Faist, J.

    2016-01-01

    Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress ger...

  19. Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

    DEFF Research Database (Denmark)

    Riskaer, Sven

    1966-01-01

    The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high-st......, experimental evidence is given to support the assumption, that in p-type germanium intraband transitions alone cannot account for the free-carrier piezobirefringence....

  20. Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies

    Science.gov (United States)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    The use of SiO_2-GeO2 mixtures in gate and capacitor dielectric applications is hampered by the inherent thermodynamic instability of germanium oxide. Studies to date have confirmed that germanium oxide is readily converted to elemental germanium [1,2]. In sharp contrast, germanium oxide is known to form stable compounds with transition metal oxides such as hafnium oxide (hafnium germanate, HfGeO_4) [3]. Thus, the incorporation of hafnium in SiO_2-GeO2 may be expected to enhance the thermal stability of germanium oxide via Hf-O-Ge bond formation. In addition, the introduction of a transition metal would simultaneously enhance the capacitance of the dielectric thereby permitting a thicker dielectric which reduces leakage current [4]. In this study, the thermal stability of PVD-grown hafnium germanosilicate (HfGeSiO) films was investigated. XPS, HR-TEM, C-V and I-V results of films after deposition and subsequent annealing treatments will be presented. The results indicate that the presence or formation of elemental germanium drastically affects the stability of the HfGeSiO films. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [2] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995) [3] P. M. Lambert, Inorganic Chemistry, 37, 1352 (1998) [4] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001)

  1. Optical properties of Germanium nanoparticles synthesized by pulsed laser ablation in acetone

    Directory of Open Access Journals (Sweden)

    Saikiran eVadavalli

    2014-10-01

    Full Text Available Germanium (Ge nanoparticles (NPs are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM and field emission scanning electron microscopy (FESEM. The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position towards the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

  2. The Effects of Germanium Biotite Supplement as a Prophylactic Agent against Respiratory Infection in Calves

    Directory of Open Access Journals (Sweden)

    Myunghwan Jung1, Bock-Gie Jung2, Seung Bin Cha1, Min-Kyoung Shin1, Won-Jung Lee1, Seung Won Shin1, Jin-A Lee2, Yeon-Kwon Jung3, Bong-Joo Lee2 and Han Sang Yoo1*

    2012-06-01

    Full Text Available Germanium biotite, a natural mineral, is comprised of mainly silicate. This mineral showed activities of increase in feed efficiency and non-specific immunostimulation in previous studies. The aims of the present study were to evaluate the prophylactic effects of germanium biotite against respiratory diseases in calves as a feed supplement and investigate the possibilities of the substitution of antibiotics with germanium biotite as feed additive. To achieve these purposes, bovine herpesvirus-1 (BHV-1 and Mannheimia haemolytica serotype A1 were experimentally inoculated into the calves. After challenge, germanium biotite showed a lower cumulative clinical score (CCS than the control group. In accordance with these clinical results, enhanced clearance of BHV-1, a low infection rate of Mannheimia haemolytica serotype A1, tempered superficial lesions, and moderated histopathological signs were observed in the germanium biotite group, compared with the control group. The results of the present study indicated that germanium biotite had prophylactic effects against bovine respiratory disease and could be a candidate for a new alternative feed supplement in calves, through its effects as a non-specific immune stimulator.

  3. The Primary and Secondary Production of Germanium: A Life-Cycle Assessment of Different Process Alternatives

    Science.gov (United States)

    Robertz, Benedicte; Verhelle, Jensen; Schurmans, Maarten

    2015-02-01

    Germanium is a semiconducting metalloid element used in optical fibers, catalysis, infrared optics, solar cells, and light-emitting diodes. The need for Ge in these markets is considered to increase by a steady ~1% on a yearly basis. Its economic importance, coupled with the identified supply risks, has led to the classification of germanium as a critical raw material within Europe. Since the early 1950s, Umicore Electro-Optic Materials has supplied germanium-based materials solutions to its markets around the world. Umicore extracts germanium from a wide range of refining and recycling feeds. The main objectives of this study were to quantify the potential environmental impacts of the production of germanium from production scraps from the photovoltaic industry and to compare them with the potential impacts of the primary production of germanium from coal. The data related to the secondary production are Umicore-specific data. Environmental impact scores have been calculated for the impact categories recommended by the International reference life cycle data system. The comparison of the primary and secondary production highlights the benefit linked to the recycling of metals.

  4. Femtosecond linear and nonlinear spectroscopy of silicon, germanium, and silicon-germanium alloys

    Science.gov (United States)

    Hu, Xiaofeng

    The time-resolved optical response of optically thick Si 1-xGe x alloys across the entire compositional range (0 pump-probe experiment in which a femtosecond pump pulse excites carriers (electron-hole pairs) in the sample and a probe pulse measures the ultrafast carrier dynamics at fixed incident angle in reflection mode through ellipsometric optics. This technique permits the real and imaginary parts of the time-varying dielectric function ɛ1(t) + iɛ2(t) to be distinguished clearly. The temporal shape Δvarepsilon1(t) depends only mildly on alloy composition, and is accurately modeled in terms of the Drude contribution from a diffusing electron-hole plasma by numerically solved four coupled differential equations and Monte Carlo simulations. The evolution of Δvarepsilon2(t), on the other hand, varies widely with composition, and appears to reflect more complicated dynamic processes including nonequilibrium carrier-induced band renormalization, thermal band gap shrinkage by nonequilibrium phonons, interband absorption saturation, and inter-conduction band absorption. Si(001) and Si 1-xGe x alloys surfaces are studied by optical second harmonic (SH) spectra generated in reflection using Ti:Sapphire femtosecond laser pulses for SH photon energies 2.0 eV adsorption and hydrogen desorption during low temperature, ultrahigh vacuum chemical vapor deposition film growth on Si(001) and Ge(001) are investigated in- situ in real time by monitoring the instantaneous hydrogen coverage using optical second harmonic generation. A simple two-site adsorption model and first- order desorption are used to establish reactive sticking coefficients and to predict epitaxial growth rate. The reactive sticking coefficients are temperature independent for disilane and temperature dependence for silane between 740 and 900 K. Predicted growth rates for silane and disilane are in good agreement with published values.

  5. Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.

    Science.gov (United States)

    Clavel, Michael; Saladukha, Dzianis; Goley, Patrick S; Ochalski, Tomasz J; Murphy-Armando, Felipe; Bodnar, Robert J; Hudait, Mantu K

    2015-12-09

    The growth, structural and optical properties, and energy band alignments of tensile-strained germanium (ε-Ge) epilayers heterogeneously integrated on silicon (Si) were demonstrated for the first time. The tunable ε-Ge thin films were achieved using a composite linearly graded InxGa1-xAs/GaAs buffer architecture grown via solid source molecular beam epitaxy. High-resolution X-ray diffraction and micro-Raman spectroscopic analysis confirmed a pseudomorphic ε-Ge epitaxy whereby the degree of strain varied as a function of the In(x)Ga(1-x)As buffer indium alloy composition. Sharp heterointerfaces between each ε-Ge epilayer and the respective In(x)Ga(1-x)As strain template were confirmed by detailed strain analysis using cross-sectional transmission electron microscopy. Low-temperature microphotoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 and 0.65 eV demonstrated for the 0.82 ± 0.06% and 1.11 ± 0.03% strained Ge on Si, respectively. Type-I band alignments and valence band offsets of 0.27 and 0.29 eV for the ε-Ge/In(0.11)Ga(0.89)As (0.82%) and ε-Ge/In(0.17)Ga(0.83)As (1.11%) heterointerfaces, respectively, show promise for ε-Ge carrier confinement in future nanoscale optoelectronic devices. Therefore, the successful heterogeneous integration of tunable tensile-strained Ge on Si paves the way for the design and implementation of novel Ge-based photonic devices on the Si technology platform.

  6. Ionic liquid electrodeposition of strain-released Germanium nanowires as stable anodes for lithium ion batteries.

    Science.gov (United States)

    Hao, Jian; Yang, Yu; Zhao, Jiupeng; Liu, Xusong; Endres, Frank; Chi, Caixia; Wang, Binsheng; Liu, Xiaoxu; Li, Yao

    2017-06-22

    With the growing demand for portable and wearable electronic devices, it is imperative to develop high performance Li-ion batteries with long life times. Germanium-based materials have recently demonstrated excellent lithium-ion storage ability and are being considered as the most promising candidates for the anodes of lithium-ion batteries. Nevertheless, the practical implementation of Ge-based materials to Li-ion batteries is greatly hampered by the poor cycling ability that resulted from the huge volume variation during lithiation/delithiation processes. Herein, we develop a simple and efficient method for the preparation of Ge nanowires without catalyst nanoparticles and templates, using ionic liquid electrodeposition with subsequent annealing treatment. The Ge nanowire anode shows improved electrochemical performance compared with the Ge dense film anode. A capacity of ∼1200 mA h g(-1) after 200 cycles at 0.1 C is obtained, with an initial coulombic efficiency of 81.3%. In addition, the Ge nanowire anode demonstrates superior rate capability with excellent capacity retention and stability (producing highly stable discharge capacities of about 620 mA h g(-1) at 5 C). The improved electrochemical performance is the result of the enhanced electron migration and electron transport paths of the nanowires, and sufficient elasticity to buffer the volume expansion. This approach encompasses a low energy processing method where all the material is electrochemically active and binder free. The improved cycling stability and rate performance characteristics make these anodes highly attractive for the most demanding lithium-ion applications.

  7. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms

    Science.gov (United States)

    2011-09-01

    The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms by Gregory A. Mitchell...Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...MD 20783-1197 ARL-TN-0459 September 2011 The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile

  8. The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

    Science.gov (United States)

    Dan'ko, Viktor; Indutnyi, Ivan; Myn'ko, Victor; Lukaniuk, Mariia; Shepeliavyi, Petro

    2015-01-01

    The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.

  9. AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

    Energy Technology Data Exchange (ETDEWEB)

    Fares, B. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France)]. E-mail: boubker.fares@insa-lyon.fr; Dubois, C. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Gautier, B. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Dupuy, J.C. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Cayrel, F. [Universite de Tours, Laboratoire de Micro-Electronique de Puissance, 16 Rue Pierre et Marie Curie, F-37071 Tours Cedex 2 (France); Gaudin, G. [Universite de Tours, Laboratoire de Micro-Electronique de Puissance, 16 Rue Pierre et Marie Curie, F-37071 Tours Cedex 2 (France)

    2006-07-30

    In this paper, the SIMS beam induced roughness (BIR) in monocrystalline Si in presence of initial surface or bulk defects of nanometric size is studied. We follow the development of the BIR by monitoring the increase of Si{sup 2+} and SiO{sub 2} {sup +} signals during SIMS sputtering. The topography of the crater bottoms is measured at different steps of the evolution of the roughness using an atomic force microscope (AFM). We show that in presence of nanometric sized defects on the surface or in the bulk, the BIR develops far more rapidly than usual. It appears as soon as the crater reaches the defects and, as reported on Si free from any treatment, the same morphology evidencing waves perpendicular to the sputtering beam develops rapidly. This study of the behaviour of the BIR in presence of voluntarily introduced defects allows us to better understand the basic physical phenomena involved in its apparition.

  10. Physical and Structural Characterization of a Monocrystalline Cu-13.7Al-4.2Ni Alloy Subjected to Thermal Cycling Treatments

    Science.gov (United States)

    Pereira, Elaine Cristina; Matlakhova, Lioudmila Aleksandrovna; Matlakhov, Anatoliy Nikolaevich; Shigue, Carlos Yujiro; Monteiro, Sérgio Neves

    2014-04-01

    A monocrystalline alloy with nominal 82wt pctCu-13.7wt pctAl-4.2wt pctNi composition and exhibiting reversible martensitic transformation (RMT) was subjected to multiple heating and cooling cycles within the RMT range of critical temperatures. Both untreated and cyclic treated alloy samples were characterized by X-ray diffraction, optical microscopy, differential scanning calorimetry, and Vickers microhardness. The results indicated that the alloy presents a complex RMT behavior disclosing a sequence of transformation steps: β 1 ↔ R and R ↔ β'1 + γ'1 as well as possible β 1 ↔ β'1 and β'1 ↔ γ'1 direct reactions. The thermal cycling treatment inhibits the development of γ'1 martensite without much change in both the physical and microstructure characteristics. This suggests a good resistance of the alloy to irreversible structural changes.

  11. XPS characterization of different thermal treatments in the ITO-Si interface of a carbonate-textured monocrystalline silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Montesdeoca-Santana, A.; Jimenez-Rodriguez, E.; Marrero, N.; Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Borchert, D. [Institut fuer Solare Energiesysteme, Fraunhofer Institut, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.e [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Fundacion de Estudios de Economia Aplicada, Catedra Focus-Abengoa, Jorge Juan 46, 28001 Madrid (Spain)

    2010-02-15

    In this work we have applied the X-ray photoelectron spectroscopy (XPS) in depth to study, for the first time, the influence of different thermal treatments in the ITO-Si interface of a monocrystalline Si-based solar cell where the Si surface is carbonate-textured and covered by an ITO sputtered layer. The efficiency of the solar cells significantly increases when thermal treatments are applied just after the ITO deposition. The efficiency is also dependent on the characteristics of the pyramidal relief of the silicon surface previously obtained by immersion of the Si wafers in a sodium carbonate/bicarbonate solution. An efficiency of 15.5% has been obtained with an optimized texturization of the silicon substrates and an annealing treatment of the solar cells at 400 deg. C just after the ITO deposition.

  12. Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level

    Energy Technology Data Exchange (ETDEWEB)

    Georgobiani, V. A., E-mail: v.georgobiani@gmail.com; Gonchar, K. A.; Osminkina, L. A.; Timoshenko, V. Yu. [Lomonosov Moscow State University, Faculty of Physics (Russian Federation)

    2015-08-15

    Silicon-nanowire layers grown by the metal-assisted chemical etching of (100)-oriented p-type monocrystalline silicon substrates with a resistivity of 10 and 0.001 Ω · cm are studied by electron microscopy, Raman scattering, and photoluminescence measurements. It is established that nanowires grown on lightly doped substrates are structurally nonporous and formed as crystalline cores covered by nanocrystals 3–5 nm in dimensions. Nanowires grown on heavily doped substrates are structurally porous and contain both small nanocrystals and coarser crystallites with equilibrium charge carriers that influence interband radiative recombination. It is found that the photoluminescence intensity of nanowires in the spectral range 1.3–2.0 eV depends on the presence of molecular oxygen.

  13. HEROICA: an underground facility for the fast screening of germanium detectors

    Science.gov (United States)

    Andreotti, E.; Garfagnini, A.; Maneschg, W.; Barros, N.; Benato, G.; Brugnera, R.; Costa, F.; Falkenstein, R.; Guthikonda, K. K.; Hegai, A.; Hemmer, S.; Hult, M.; Jänner, K.; Kihm, T.; Lehnert, B.; Liao, H.; Lubashevskiy, A.; Lutter, G.; Marissens, G.; Modenese, L.; Pandola, L.; Reissfelder, M.; Sada, C.; Salathe, M.; Schmitt, C.; Schulz, O.; Schwingenheuer, B.; Turcato, M.; Ur, C.; von Sturm, K.; Wagner, V.; Westermann, J.

    2013-06-01

    HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) is an infrastructure to characterize germanium detectors and has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223 m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30 km from the underground test site. Therefore, HADES is used both for storage of the crystals over night, during diode production, and for the characterization measurements. A full quality control chain has been setup and tested on the first seven prototype detectors delivered by the manufacturer at the beginning of 2012. The screening capabilities demonstrate that the installed setup fulfills a fast and complete set of measurements on the diodes and it can be seen as a general test facility for the fast screening of high purity germanium detectors. The results are of major importance for a future massive production and characterization chain of germanium diodes foreseen for a possible next generation 1-tonne double beta decay experiment with 76Ge.

  14. Measurement of the refractive index and thickness for infrared optical films deposited on rough substrates.

    Science.gov (United States)

    Saito, M; Nakamura, S; Miyagi, M

    1992-10-01

    A novel method is proposed to evaluate the refractive index and thickness of dielectric thin films in the infrared wavelength range. The method is useful for measurement of thin films that are formed on such rough substrates as metal plates, since it utilizes only the wavelengths of interference peaks, which is slightly affected by surface roughness of the sample. The method was applied to the measurement of germanium, zinc selenide, and lead fluoride films deposited on copper substrates. Measured thicknesses agreed well with the values that were obtained by ellipsometry, and refractive indices exhibited a tendency to increase with the film thickness.

  15. Optical Properties of Semiconductor-Metal Composite Thin Films in the Infrared Region

    Science.gov (United States)

    Nagendra, C. L.; Lamb, James L.

    1993-01-01

    Germanium:Silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40% have been prepared by dc co-sputtering of Ge an Ag and the films' surface morphology and optical properties have been characterized using transmission electron microscopy (TEM) and infrared spectrophotometry. It is seen that while the films containing lower concentrations of Ag have island-like morphology (i.e. Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have symmetric distribution of Ag and Ge.

  16. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  17. Improved constraints on WIMPs from the International Germanium Experiment IGEX

    CERN Document Server

    Morales, A; Brodzinski, R L; Cebrián, S; García, E; Irastorza, I G; Kirpichnikov, I V; Klimenko, A A; Miley, H S; Morales, J; De Solorzano, A O; Osetrov, S B; Pogosov, V S; Puimedón, J; Reeves, J H; Sarsa, M L; Smolnikov, A A; Tamanyan, A G; Vasenko, A A; Vasilev, S I; Villar, J A

    2002-01-01

    One IGEX 76Ge double-beta decay detector is currently operating in the Canfranc Underground Laboratory in a search for dark matter WIMPs, through the Ge nuclear recoil produced by the WIMP elastic scattering. A new exclusion plot, has been derived for WIMP-nucleon spin-independent interactions. To obtain this result, 40 days of data from the IGEX detector (energy threshold E \\~ 4 keV), recently collected, have been analyzed. These data improve the exclusion limits derived from all the other ionization germanium detectors in the mass region from 20 GeV to 200 GeV, where a WIMP supposedly responsible for the annual modulation effect reported by the DAMA experiment would be located. The new IGEX exclusion contour enters, by the first time, the DAMA region by using only raw data, with no background discrimination, and excludes its upper left part. It is also shown that with a moderate improvement of the detector performances, the DAMA region could be fully explored.

  18. Radium needle used to calibrate germanium gamma-ray detector.

    Science.gov (United States)

    Kamboj, S; Lovett, D; Kahn, B; Walker, D

    1993-03-01

    A standard platinum-iridium needle that contains 374 MBq 226Ra was tested as a source for calibrating a portable germanium detector used with a gamma-ray spectrometer for environmental radioactivity measurements. The counting efficiencies of the 11 most intense gamma rays emitted by 226Ra and its short-lived radioactive progeny at energies between 186 and 2,448 keV were determined, at the full energy peaks, to construct a curve of counting efficiency vs. energy. The curve was compared to another curve between 43 and 1,596 keV obtained with a NIST mixed-radionuclide standard. It was also compared to the results of a Monte Carlo simulation. The 226Ra source results were consistent with the NIST standard between 248 and 1,596 keV. The Monte Carlo simulation gave a curve parallel to the curve for the combined radium and NIST standard data between 250 and 2,000 keV, but at higher efficiency.

  19. Inverting polar domains via electrical pulsing in metallic germanium telluride

    Science.gov (United States)

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-04-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage.

  20. Neutron damage tests of a highly segmented germanium crystal

    Energy Technology Data Exchange (ETDEWEB)

    Ross, T.J. [Physics Department, University of Richmond, Richmond, VA 23173 (United States); Physics Department, University of Surrey, Guildford GU2 7JL (United Kingdom); Beausang, C.W. [Physics Department, University of Richmond, Richmond, VA 23173 (United States)], E-mail: cbeausan@richmond.edu; Lee, I.Y.; Macchiavelli, A.O.; Gros, S.; Cromaz, M.; Clark, R.M.; Fallon, P.; Jeppesen, H. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Allmond, J.M. [Physics Department, University of Richmond, Richmond, VA 23173 (United States)

    2009-07-21

    To evaluate the effect of neutron damage on the performance of highly segmented germanium detectors the P3 prototype detector for the GRETINA array was subjected to a neutron flux of {approx}3x10{sup 9} n/cm{sup 2} over a period of 5 days. During the irradiation, the resolution (full-width half-maximum (FWHM)) of the 1332 keV {sup 60}Co photopeak increased from {approx}1.8 to {approx}6.0 keV while the full-width at tenth maximum (FWTM) increased from {approx}4 keV to more than 12 keV. Following the irradiation the detector was successfully annealed and the energy resolution returned to pre-irradiation values. All detector segments were fully functional before and after the annealing and following multiple room-temperature cycles. A comparison of digitized pulse shapes in the damaged and annealed detector indicates that the effect of extreme neutron damage (FWHM=6 keV) on the position resolution is on the order of {approx}1.7 mm while for 3 keV resolution the position resolution degrades by {approx}0.5 mm.

  1. Environmental Radioactivity: Gamma Ray Spectroscopy with Germanium detector

    Science.gov (United States)

    Vyas, Gargi; Beausang, Cornelius; Hughes, Richard; Tarlow, Thomas; Gell, Kristen; University of Richmond Physics Team

    2013-10-01

    A CF-1000BRL series portable Air Particle Sampler with filter paper as filter media was placed in one indoor and one outdoor location at 100 LPM flow rate on six dates under alternating rainy and warm weather conditions over the course of sixteen days in May 2013. The machine running times spanned between 6 to 69 hours. Each filter paper was then put in a germanium gamma ray detector, and the counts ranged from 93000 to 250000 seconds. The spectra obtained were analyzed by the CANBERRA Genie 2000 software, corrected using a background spectrum, and calibrated using a 20.27 kBq activity multi-nuclide source. We graphed the corrected counts (from detector analysis time)/second (from air sampler running time)/liter (from the air sampler's flow rate) of sharp, significantly big peaks corresponding to a nuclide in every sample against the sample number along with error bars. The graphs were then used to compare the samples and they showed a similar trend. The slight differences were usually due to the different running times of the air sampler. The graphs of about 22 nuclides were analyzed. We also tried to recognize the nuclei to which several gamma rays belonged that were displayed but not recognized by the Genie 2000 software.

  2. Inverting polar domains via electrical pulsing in metallic germanium telluride

    Science.gov (United States)

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-01-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

  3. Experimental germanium dioxide-induced neuropathy in rats.

    Science.gov (United States)

    Matsumuro, K; Izumo, S; Higuchi, I; Ronquillo, A T; Takahashi, K; Osame, M

    1993-01-01

    We report an experimental model of germanium dioxide (GeO2)-induced neuropathy in rats. More than 6 months administration of GeO2 to young rats produced neuropathy characterized by segmental demyelination/remyelination and nerve edema. Electron microscopic studies demonstrated that changes in Schwann cells, such as an increased cytoplasmic volume or disintegration of the cytoplasm, were the earliest pathological findings. Schwann cell mitochondria contained high electron-dense materials. Subsequent removal of necrotic Schwann cell debris and myelin by invading macrophages was evident. These findings suggested that the Schwann cells themselves are the primary target of the toxin. The deposition of electron-dense granules in the intra-axonal vesicles, which was suggestive of glycogen granules in mitochondria, was observed in the advanced stage of the neuropathy. The findings of endoneurial edema with splitting of myelin lamellae were noted at the early stage of demyelination. Nerve edema may be the result of GeO2-induced endothelial cell injury.

  4. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  5. Techniques to distinguish between electron and photon induced events using segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kroeninger, K.

    2007-06-05

    Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in {sup 60}Co, {sup 152}Eu and {sup 228}Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

  6. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L..

    Directory of Open Access Journals (Sweden)

    Partha Talukdar

    Full Text Available Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population and a genome wide association (GWA study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity. However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

  7. A-centers and isovalent impurities in germanium: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Londos, C.A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Bracht, H. [Institute of Materials Physics, University of Muenster, Wilhelm-Klemm-Strasse 10, D-48149 Muenster (Germany)

    2011-03-25

    In the present study density functional theory calculations have been used to calculate the binding energies of clusters formed between lattice vacancies, oxygen and isovalent atoms in germanium. In particular we concentrated on the prediction of binding energies of A-centers or oxygen interstitials that are at nearest and next nearest neighbor sites to isovalent impurities (carbon, silicon and tin) in germanium. The A-center is an oxygen interstitial atom near a lattice vacancy and is an important impurity-defect pair in germanium. In germanium doped with carbon or silicon, we calculated that most of the binding energy of the cluster formed between A-centers and the carbon or silicon atoms is due to the interaction between the oxygen interstitial atom and the carbon or silicon atoms. For tin-doped germanium most of the binding energy is due to the interaction of the oversized tin atom and the lattice vacancy, which essentially provide space for tin to relax. The nearest neighbor carbon-oxygen interstitial and the silicon-oxygen interstitial pairs are significantly bound, whereas the tin-oxygen interstitial pairs are not. The results are discussed in view of analogous investigations in isovalently doped silicon.

  8. Germanium anode with excellent lithium storage performance in a germanium/lithium-cobalt oxide lithium-ion battery.

    Science.gov (United States)

    Li, Xiuwan; Yang, Zhibo; Fu, Yujun; Qiao, Li; Li, Dan; Yue, Hongwei; He, Deyan

    2015-02-24

    Germanium is a highly promising anode material for lithium-ion batteries as a consequence of its large theoretical specific capacity, good electrical conductivity, and fast lithium ion diffusivity. In this work, Co3O4 nanowire array fabricated on nickel foam was designed as a nanostructured current collector for Ge anode. By limiting the voltage cutoff window in an appropriate range, the obtained Ge anode exhibits excellent lithium storage performance in half- and full-cells, which can be mainly attributed to the designed nanostructured current collector with good conductivity, enough buffering space for the volume change, and shortened ionic transport length. More importantly, the assembled Ge/LiCoO2 full-cell shows a high energy density of 475 Wh/kg and a high power density of 6587 W/kg. A high capacity of 1184 mA h g(-1) for Ge anode was maintained at a current density of 5000 mA g(-1) after 150 cycles.

  9. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    CERN Document Server

    Schubert, A G; Avignone, F T; Back, H O; Barabash, A S; Bergevin, M; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Leon, J; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hime, A; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Keillor, M E; Keller, C; Kephart, J D; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B; LaRoque, B H; Leviner, L E; Loach, J C; MacMullin, S; Marino, M G; Martin, R D; Mei, D -M; Merriman, J; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N; Phillips, D G; Poon, A W P; Perumpilly, G; Prior, G; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Shima, T; Shirchenko, M; Snavely, K J; Sobolev, V; Steele, D; Strain, J; Thomas, K; Timkin, V; Tornow, W; Vanyushin, I; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Wolfe, B A; Yakushev, E; Young, A R; Yu, C ?H; Yumatov, V; Zhan, C

    2011-01-01

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76-Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76-Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76-Ge neutrinoless double-beta decay Q-value of 2039 keV.

  11. Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

    Science.gov (United States)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-12-01

    The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively.

  12. Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Moffatt, Robert [Stanford U.

    2016-01-01

    In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Our measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.

  13. Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

    CERN Document Server

    Kuleev, I G

    2001-01-01

    The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

  14. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  16. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A.; Dimoulas, A. [MBE Laboratory, Institute of Materials Science, NCSR Demokritos, Athens (Greece); Schwingenschloegl, U. [PSE Division, KAUST, Thuwal (Saudi Arabia)

    2012-04-02

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  18. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    Science.gov (United States)

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  19. Systematic Uncertainties in High-Rate Germanium Data

    Energy Technology Data Exchange (ETDEWEB)

    Gilbert, Andrew J.; Fast, James E.; Fulsom, Bryan G.; Pitts, William K.; VanDevender, Brent A.; Wood, Lynn S.

    2016-10-06

    For many nuclear material safeguards inspections, spectroscopic gamma detectors are required which can achieve high event rates (in excess of 10^6 s^-1) while maintaining very good energy resolution for discrimination of neighboring gamma signatures in complex backgrounds. Such spectra can be useful for non-destructive assay (NDA) of spent nuclear fuel with long cooling times, which contains many potentially useful low-rate gamma lines, e.g., Cs-134, in the presence of a few dominating gamma lines, such as Cs-137. Detectors in use typically sacrifice energy resolution for count rate, e.g., LaBr3, or visa versa, e.g., CdZnTe. In contrast, we anticipate that beginning with a detector with high energy resolution, e.g., high-purity germanium (HPGe), and adapting the data acquisition for high throughput will be able to achieve the goals of the ideal detector. In this work, we present quantification of Cs-134 and Cs-137 activities, useful for fuel burn-up quantification, in fuel that has been cooling for 22.3 years. A segmented, planar HPGe detector is used for this inspection, which has been adapted for a high-rate throughput in excess of 500k counts/s. Using a very-high-statistic spectrum of 2.4*10^11 counts, isotope activities can be determined with very low statistical uncertainty. However, it is determined that systematic uncertainties dominate in such a data set, e.g., the uncertainty in the pulse line shape. This spectrum offers a unique opportunity to quantify this uncertainty and subsequently determine required counting times for given precision on values of interest.

  20. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  1. Low Power Silicon Germanium Electronics for Microwave Radiometers

    Science.gov (United States)

    Doiron, Terence A.; Krebs, Carolyn (Technical Monitor)

    2001-01-01

    Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.

  2. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

    Science.gov (United States)

    Alkhatib, Amro; Nayfeh, Ammar

    2013-06-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.

  3. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Energy Technology Data Exchange (ETDEWEB)

    Heusser, G.; Weber, M.; Hakenmueller, J.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy)

    2015-11-15

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut fuer Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites. (orig.)

  4. GIOVE - A New Detector Setup for High Sensitivity Germanium Spectroscopy At Shallow Depth

    CERN Document Server

    Heusser, Gerd; Hakenmüller, Janina; Laubenstein, Matthias; Lindner, Manfred; Maneschg, Werner; Simgen, Hardy; Stolzenburg, Dominik; Strecker, Herbert

    2015-01-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer Veto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut f\\"ur Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of <100 {\\mu}Bq/kg for primordial radionuclides from U and Th in typical {\\gamma} ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  5. Atomic ionization of germanium by neutrinos from an ab initio approach

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiunn-Wei [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); National Center for Theoretical Sciences and Leung Center for Cosmology and Particle Astrophysics, National Taiwan University, Taipei 10617, Taiwan (China); Chi, Hsin-Chang [Department of Physics, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan (China); Huang, Keh-Ning [Department of Physics, Sichuan University, Chengdu, Sichuan (China); Department of Physics, Fuzhou University, Fuzhou, Fujian (China); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C.-P. [Department of Physics, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan (China); Shiao, Hao-Tse [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Singh, Lakhwinder [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Wong, Henry T. [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Wu, Chih-Liang; Wu, Chih-Pan [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-04-04

    An ab initio calculation of atomic ionization of germanium by neutrinos was carried out in the framework of multiconfiguration relativistic random phase approximation and benchmarked by related atomic structure and photoabsorption data. This improves over the conventional approach based on scattering off free electrons whose validity at sub-keV energy transfer is questionable. Limits on neutrino magnetic moments are derived using reactor neutrino data taken with low threshold germanium detectors. Future applications of these atomic techniques will greatly reduce the atomic uncertainties in low-energy neutrino and dark matter detections.

  6. Optimization of the Transport Shield for Neutrinoless Double Beta-decay Enriched Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo Navarrete, Estanislao; Kouzes, Richard T.; Orrell, John L.; Reid, Douglas J.; Fast, James E.

    2012-04-15

    This document presents results of an investigation of the material and geometry choice for the transport shield of germanium, the active detector material used in 76Ge neutrinoless double beta decay searches. The objective of this work is to select the optimal material and geometry to minimize cosmogenic production of radioactive isotopes in the germanium material. The design of such a shield is based on the calculation of the cosmogenic production rate of isotopes that are known to cause interfering backgrounds in 76Ge neutrinoless double beta decay searches.

  7. Extraction of Physics Signals Near Threshold with Germanium Detectors in Neutrino and Dark Matter Experiments

    CERN Document Server

    Soma, A K; Lin, F K; Singh, M K; Jiang, H; Liu, S K; Singh, L; Wu, Y C; Yang, L T; Zhao, W; Agartioglu, M; Asryan, G; Chuang, Y C; Deniz, M; Hsu, C L; Hsu, Y H; Huang, T R; Li, H B; Li, J; Liao, F T; Liao, H Y; Lin, C W; Lin, S T; Ma, J L; Sharma, V; Shen, Y T; Singh, V; Su, J; Subrahmanyam, V S; Tseng, C H; Wang, J J; Wong, H T; Xu, Y; Yang, S W; Yu, C X; Yuan, X C; Yue, Q; Zeyre, M

    2014-01-01

    Germanium ionization detectors with sensitivities as low as 100 eVee open new windows for the studies of neutrino and dark matter physics. The physics motivations of sub-keV germanium detectors are summarized. The amplitude of physics signals is comparable to those due to fluctuations of the pedestal electronic noise. Various experimental issues have to be attended before the promises of this new detector technique can be fully exploited. These include quenching factors, energy definition and calibration, signal triggering and selection together with their associated inefficiencies derivation. The efforts and results of an R&D program to address these challenges are presented.

  8. Temperature-dependent hyperfine interactions at {sup 111}Cd-C complex in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Mola, Genene Tessema [University of Kwazulu-Natal, School Chemistry and Physics, Pietermaritzburg Campus, Private Bag X01, Scottsville (South Africa)

    2013-09-15

    The temperature dependent nuclear hyperfine interaction of {sup 111}Cd-carbon complex in germanium has been studied using the perturbed {gamma}-{gamma} angular correlation (PAC) method. The parameters of the hyperfine interaction representing substitutional carbon-cadmium complex in germanium ({nu} {sub Q1}=207(1) MHz ({eta}=0.16)) shows dependence on temperature. The formation and thermal stability of the complex has been reported by the same author earlier. It was found in this study that the quadrupole coupling constant of the interaction increases at sample temperature below 293 K. The results are encouraging toward better understanding of the complex in the host matrix. (orig.)

  9. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    Science.gov (United States)

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  10. Charge-trap correction and radiation damage in orthogonal-strip planar germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hull, E.L. [PHDS Corporation, 3011 Amherst Road, Knoxville, TN 37921 (United States); Jackson, E.G.; Lister, C.J. [Physics Department, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Pehl, R.H. [PHDS Corporation, 3011 Amherst Road, Knoxville, TN 37921 (United States)

    2014-10-21

    A charge-carrier trap correction technique was developed for orthogonal strip planar germanium gamma-ray detectors. The trap corrector significantly improves the gamma-ray energy resolution of detectors with charge-carrier trapping from crystal-growth defects and radiation damage. Two orthogonal-strip planar germanium detectors were radiation damaged with 2-MeV neutron fluences of ∼8×10{sup 9} n/cm{sup 2}. The radiation-damaged detectors were studied in the 60–80 K temperature range.

  11. Correlation between Optical Properties and Chemical Composition of Sputter-Deposited Germanium Oxide (GEOX) Films (Postprint)

    Science.gov (United States)

    2014-03-18

    Zhang, W. Que, J. Chen, X. Zhang, J. Hu, W. Liu, Opt. Mater. 35 (2013) 2556– 2560. [11] B.G. Segda, M. Jacquet, C. Caapera, G . Baud , J. Pierre Besse...Samanoudy, J. Mater. Sci. Lett. 6 (1987) 1447–1449. [20] C. Caperaa, G . Baud , J.P. Besse, P. Bondot, P. Fessler, M. Jacquet, Mater. Res. Bull. 24 (1989...POSTPRINT) Neil R. Murphy, J. G . Jones, and R. Jakubiak AFRL/RXAP MARCH 2014 Interim Report Approved for public release

  12. GeO2 Thin Film Deposition on Graphene Oxide by the Hydrogen Peroxide Route: Evaluation for Lithium-Ion Battery Anode.

    Science.gov (United States)

    Medvedev, Alexander G; Mikhaylov, Alexey A; Grishanov, Dmitry A; Yu, Denis Y W; Gun, Jenny; Sladkevich, Sergey; Lev, Ovadia; Prikhodchenko, Petr V

    2017-03-15

    A peroxogermanate thin film was deposited in high yield at room temperature on graphene oxide (GO) from peroxogermanate sols. The deposition of the peroxo-precursor onto GO and the transformations to amorphous GeO2, crystalline tetragonal GeO2, and then to cubic elemental germanium were followed by electron microscopy, XRD, and XPS. All of these transformations are influenced by the GO support. The initial deposition is explained in view of the sol composition and the presence of GO, and the different thermal transformations are explained by reactions with the graphene support acting as a reducing agent. As a test case, the evaluation of the different materials as lithium ion battery anodes was carried out revealing that the best performance is obtained by amorphous germanium oxide@GO with >1000 mAh g(-1) at 250 mA g(-1) (between 0 and 2.5 V vs Li/Li(+) cathode), despite the fact that the material contained only 51 wt % germanium. This is the first demonstration of the peroxide route to produce peroxogermanate thin films and thereby supported germanium and germanium oxide coatings. The advantages of the process over alternative methodologies are discussed.

  13. Texture in thin film silicides and germanides: A review

    Science.gov (United States)

    De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

    2016-09-01

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  14. Application of vacuum reduction and chlorinated distillation to enrich and prepare pure germanium from coal fly ash.

    Science.gov (United States)

    Zhang, Lingen; Xu, Zhenming

    2017-01-05

    Germanium, as strategic reserve metal, plays critical role in high-tech industry. However, a contradiction of increasing consumption and scarcity of germanium resource is becoming more and more prominent. This paper proposed an integrated process to recycle germanium from coal fly ash. This technological process mainly consisted of two procedures: vacuum reduction with the purposes of enriching germanium and chlorinated distillation with the purposes of purifying germanium. Several highlights are summarized as follows: (i) Separation principle and reaction mechanism were discussed to understand this integrated process. (ii) Optimum designs and product analysis were developed to guide industrial recycling. The appropriate parameters for vacuum reduction process on the basis of response surface methodology (RSM) were 920.53°C and 259.63Pa, with 16.64wt.% reductant, and for the chlorinated distillation process, adding 8mol/l HCl and L/S 7, 8wt.% MnO2. The global recovery rate of germanium was 83.48±0.36% for the integrated process. (iii) This process overcomes the shortages of traditional process and shows its efficiency and environmental performance. It is significant in accordance with the "Reduce, Reuse and Recycle Principle" for solid waste and further provides a new opportunity for germanium recovery from waste by environment-friendly way.

  15. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  16. Quantum devices in silicon/silicon germanium heterostructures

    Science.gov (United States)

    Slinker, Keith A.

    This thesis presents the fabrication and characterization of silicon/silicon-germanium quantum wells, quantum dots, and quantum point contacts. These systems are promising for quantum computing applications due to the long predicted spin lifetimes. In addition, the valley states in Si/SiGe two-dimensional electron gases (2DEGs) are a novel phenomenon in regards to nanostructures, and characterizing these states is also necessary for potential computing applications. However, working with these heterostructures---especially in regards to metal Schottky gating---has proved historically challenging such that single electron transistors had not been achieved at the onset of this research. The first quantum dots in Si/SiGe are presented, defined completely by CF4 reactive ion etch without the use of metal gates. Etch-defined 2DEG side gates are used to modulate the potential of the quantum dot. Results for various metal gating schemes are also presented, culminating in the first Schottky-gated quantum dots in Si/SiGe. Differing from the etch-defined dots, the tunnel junctions of the metal-etch hybrid dot are fully tunable by the voltage applied to the top gates. Hall measurements of multiple heterostructures are presented, providing evidence that many of the challenges associated with gating Si/SiGe can be attributed to undepleted dopants in the supply layer. These dopants screen the top gates but can be detected as a parallel conduction channel in Hall measurements taken at a 2 K. A fully top-gate defined quantum dot was fabricated on an optimized Si/SiGe heterostructure, and the single particle excited states were resolved for the first time in Si/SiGe. Finally, quantum point contacts were defined by metal top gates, and the conduction was mapped out over a large range of magnetic field and voltages on the gates. The positions of the conductance steps are used to extract the valley splitting---a quantity that had been measured in a bulk 2DEG but not in a nanostructure

  17. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    Science.gov (United States)

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg-1 (Ge 1.6 mgṡkg-1, Nd 25 mgṡkg-1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg-1Nd) were several times higher than in herbaceous species (0.05 mgṡkg-1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within the tree

  18. High bit rate germanium single photon detectors for 1310nm

    Science.gov (United States)

    Seamons, J. A.; Carroll, M. S.

    2008-04-01

    There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

  19. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

    DEFF Research Database (Denmark)

    Hellings, G.; Rosseel, E.; Simoen, E.

    2011-01-01

    Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3...

  20. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    Science.gov (United States)

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  1. Chemical synthesis of germanium nanoparticles with uniform size as anode materials for lithium ion batteries.

    Science.gov (United States)

    Wang, Liangbiao; Bao, Keyan; Lou, Zhengsong; Liang, Guobing; Zhou, Quanfa

    2016-02-21

    A simple Mg-thermal reduction reaction is reported to synthesize germanium (Ge) nanoparticles with a uniform size at a low temperature of 400 °C in an autoclave. The as-prepared Ge nanoparticles exhibit promising anode applications in lithium ion batteries with high capacity and excellent cycling stability.

  2. Dark Matter Search with sub-keV Germanium Detectors at the China Jinping Underground Laboratory

    CERN Document Server

    Yue, Qian

    2012-01-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  3. Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

    Energy Technology Data Exchange (ETDEWEB)

    Napoli, D. R., E-mail: daniel.r.napoli@lnl.infn.it [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); Maggioni, G., E-mail: maggioni@lnl.infn.it; Carturan, S.; Gelain, M. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); Department of Physics and Astronomy “G. Galilei”, University of Padova, Via Marzolo 8, 35121 Padova (Italy); Eberth, J. [Institut für Kernphysik, Universität zu Köln, Zülpicher Straße 77, D-50937 Köln (Germany); Grimaldi, M. G.; Tatí, S. [Department of Physics and Astronomy, University of Catania (Italy); Riccetto, S. [University of Camerino and INFN of Perugia (Italy); Mea, G. Della [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); University of Trento (Italy)

    2016-07-07

    High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

  4. Dark Matter Search with Sub-Kev Germanium Detectors at the China Jinping Underground Laboratory

    Science.gov (United States)

    Yue, Qian; Wong, Henry T.

    2013-12-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  5. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    Science.gov (United States)

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  6. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    Science.gov (United States)

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-07-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen- (n = 3-12), and their corresponding neutral species. Photoelectron spectra of RuGen- clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen-/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters.

  7. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren

    2011-01-01

    The formation of a denuded zone(DZ) by conventional furnace annealing(CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper(Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V) related complexes and germanium-vacancy(GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  8. Physical and optical properties of amorphous Ge x As20S80- x thin films

    Science.gov (United States)

    Dahshan, A.; Amer, H. H.

    2011-02-01

    We report the effect of replacement of sulfur by germanium on the optical constants and some other physical parameters of chalcogenide Ge x As20S80- x (where x = 0, 5, 10, 15 and 20 at%) thin films. Increasing germanium content affected the average heat of atomization, average coordination number, number of constraints and the cohesive energy. Films with thicknesses 800-820 nm of Ge x As20S80- x were prepared by thermal evaporation of bulk samples. Transmission spectra, T(λ), of the films at normal incidence were obtained in the region from 400 to 2500 nm. A straightforward analysis proposed by Swanepoel [J. Phys. E Sci. Instrum. 16 (1983) p 1214], based on the use of maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Optical absorption measurements showed that the fundamental absorption edge is a function of composition. Optical absorption is due to allowed non-direct transition and the energy gap decreases while the refractive index increases with increasing germanium content. The chemical-bond approach has been applied to obtain the excess of S-S homopolar bonds and the cohesive energy of the Ge x As20S80- x system.

  9. Effects of vibration frequency on vibration-assisted nano-scratch process of mono-crystalline copper via molecular dynamics simulation

    Science.gov (United States)

    Zhu, Bo; Zhao, Hongwei; Zhao, Dan; Zhang, Peng; Yang, Yihan; Han, Lei; Kui, Hailin

    2016-03-01

    It has always been a critical issue to understand the material removal behavior of Vibration-Assisted Machining (VAM), especially on atomic level. To find out the effects of vibration frequency on material removal response, a three-dimensional molecular dynamics (MD) model has been established in this research to investigate the effects of scratched groove, crystal defects on the surface quality, comparing with the Von Mises shear strain and tangential force in simulations during nano-scratching process. Comparisons are made among the results of simulations from different vibration frequency with the same scratching feed, depth, amplitude and crystal orientation. Copper potential in this simulation is Embedded-Atom Method (EAM) potential. Interaction between copper and carbon atoms is Morse potential. Simulational results show that higher frequency can make groove smoother. Simulation with high frequency creates more dislocations to improve the machinability of copper specimen. The changing frequency does not have evident effects on Von Mises shear strain. Higher frequency can decrease the tangential force to reduce the consumption of cutting energy and tool wear. In conclusion, higher vibration frequency in VAM on mono-crystalline copper has positive effects on surface finish, machinablility and tool wear reduction.

  10. Effects of vibration frequency on vibration-assisted nano-scratch process of mono-crystalline copper via molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Bo Zhu

    2016-03-01

    Full Text Available It has always been a critical issue to understand the material removal behavior of Vibration-Assisted Machining (VAM, especially on atomic level. To find out the effects of vibration frequency on material removal response, a three-dimensional molecular dynamics (MD model has been established in this research to investigate the effects of scratched groove, crystal defects on the surface quality, comparing with the Von Mises shear strain and tangential force in simulations during nano-scratching process. Comparisons are made among the results of simulations from different vibration frequency with the same scratching feed, depth, amplitude and crystal orientation. Copper potential in this simulation is Embedded-Atom Method (EAM potential. Interaction between copper and carbon atoms is Morse potential. Simulational results show that higher frequency can make groove smoother. Simulation with high frequency creates more dislocations to improve the machinability of copper specimen. The changing frequency does not have evident effects on Von Mises shear strain. Higher frequency can decrease the tangential force to reduce the consumption of cutting energy and tool wear. In conclusion, higher vibration frequency in VAM on mono-crystalline copper has positive effects on surface finish, machinablility and tool wear reduction.

  11. Characteristics of poly- and mono-crystalline BeO and SiO{sub 2} as thermal and cold neutron filters

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Habib, N. [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt); Mansy, M.S., E-mail: drmohamedmansy88@hotmail.com [Reactor Physics Department, NRC, Atomic Energy Authority, Cairo (Egypt)

    2015-09-01

    Highlights: • Neutron filtering features of BeO and SiO{sub 2} poly- and mono-crystals. • Calculations of the cold and thermal neutron cross sections and transmission with the code “HEXA-FILTERS”. • Optimal mosaic spread, thicknesses and cutting planes for BeO and SiO{sub 2} mono-crystals. - Abstract: A simple model along with a computer code “HEXA-FILTERS” is used to carry out the calculation of the total cross-sections of BeO and SiO{sub 2} having poly or mono-crystalline form as a function of neutron wavelength at room (R.T.) and liquid nitrogen (L.N.) temperatures. An overall agreement is indicated between the calculated neutron cross-sections and experimental data. Calculation shows that 25 cm thick of polycrystalline BeO cooled at liquid nitrogen temperature was found to be a good filter for neutron wavelengths longer than 0.46 nm. While, 50 cm of SiO{sub 2}, with much less transmission, for neutrons with wavelengths longer than 0.85 nm. It was also found that 10 cm of BeO and 15 cm SiO{sub 2} thick mono-crystals cut along their (0 0 2) plane, with 0.5° FWHM on mosaic spread and cooled at L.N., are a good thermal neutron filter, with high effect-to-noise ratio.

  12. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

    2016-09-15

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  13. Determination of SiO2 and C layers on a monocrystalline silicon sphere by reference-free x-ray fluorescence analysis

    Science.gov (United States)

    Hönicke, Philipp; Holfelder, Ina; Kolbe, Michael; Lubeck, Janin; Pollakowski-Herrmann, Beatrix; Unterumsberger, Rainer; Weser, Jan; Beckhoff, Burkhard

    2017-08-01

    The redefinition of the kilogram will be based on Planck’s constant, which can be calculated from Avogadro’s constant, and hence by ‘counting’ the silicon atoms in a monocrystalline 28Si sphere weighing one kilogram. To reduce the influence of the surface layers on the determined value requires, amongst other issues, an accurate quantification of these layers on the 28Si spheres. Apart from the native SiO2 layer, carbonaceous contamination layers and adsorbed water molecules are expected to be crucial in determining the surface composition. The overall mass contribution of these surface layers must be determined with an accuracy below 10% in order to be able to meet the targeted uncertainty budget for the redefinition. In this work, we performed a quantification of these surface layers, applying reference-free x-ray fluorescence spectrometry using a modified manipulator within an ultra-high vacuum chamber. Using this setup, we are able to quantitatively assess the surface of the spheres on a large area (about 20%) with quantification uncertainties below the required target of 10% for oxygen and carbon in order to meet an absolute uncertainty value of the mass below 10 µg.

  14. Design and optimisation of suspended strained germanium membranes for near-infrared lasing (Conference Presentation)

    Science.gov (United States)

    Burt, Daniel; Aldeek, Waseem; Aldaghri, Osamah A.; Ikonic, Zoran; Querin, Oswaldo M.; Kelsall, Robert W.

    2016-05-01

    The development of a semiconductor laser compatible with silicon substrates and high-volume silicon integrated circuit manufacturing is a key requirement for monolithic silicon photonic transceivers. Tensile strained germanium is a promising material system which meets these criteria, and both optically pumped and electrically injected lasing have been reported[1,2]. It is well established that growth of thick (~1 micron) layers of germanium on silicon substrates by two-stage chemical vapour deposition followed by thermal annealing results in nearly-relaxed germanium with a residual biaxial tensile strain of typically 0.15-0.25% [3]. Several researchers have investigated methods of amplifying this built-in strain in order to increase the attainable optical gain. Increased uniaxial strain levels have been demonstrated in suspended linear bridge structures created by wet chemical underetching. However, uniaxial strain is less effective than biaxial strain in converting germanium from an indirect to a direct gap semiconductor and hence generating substantial optical gain. In this work, we have computationally investigated and optimised two-dimensional patterning and under-etching of germanium membranes in order to achieve biaxial strain amplification. Strain simulations were carried out using finite element methods and the shape of the suspended germanium structures was optimised to achieve the highest tensile strain whilst remaining below the empirically determined yield strength of the thin membranes. The net optical gain distribution across the membrane was calculated using 8 band k.p bandstructure to determine the full interband gain, the inter-valence-band absorption and the intervalley and intravalley phonon- and impurity-assisted free carrier absorption. Band-gap narrowing effects were included using empirical data. Biaxial strain values of ~1% can be achieved in the lasing region of the structure, which, although below the level required to convert germanium

  15. Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

    Institute of Scientific and Technical Information of China (English)

    Han De-Dong; Kang Jin-Feng; Liu Xiao-Yan; Sun Lei; Luo Hao; Han Ru-Qi

    2007-01-01

    This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated.Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

  16. Structural and magnetic properties of zinc ferrite thin films irradiated by 90 keV neon ions

    Science.gov (United States)

    Gafton, E. V.; Bulai, G.; Caltun, O. F.; Cervera, S.; Macé, S.; Trassinelli, M.; Steydli, S.; Vernhet, D.

    2016-08-01

    The effects of 90 keV neon beam irradiation on the structure and magnetic properties of zinc ferrite thin films have been investigated through several methods, namely, X-ray diffraction technique, Vibrating Sample and SQUID magnetometers. Beforehand, the pristine have also been characterized using profilometry and microscopy techniques. In particular single-phase formation of the thin films deposited on monocrystalline Si (111) substrate by pulsed laser deposition technique was confirmed. Crystal lattice, coercivity, saturation magnetization have been studied for the first time, as a function of ion penetration depth and irradiation fluence. The chemical composition and the crystallinity of the films are not affected with the ion impact acting as a mechanical stress relief. On the contrary, both magnetization and coercivity are sensitive to Neq+ ion irradiation and exhibit different behaviours depending on the ion fluence range.

  17. Compositional dependence of the optical constants of amorphous GexAs20Se80-x thin films

    Science.gov (United States)

    Dahshan, A.; Amer, H. H.; Aly, K. A.

    2008-11-01

    This paper reports the effect of replacement of selenium by germanium on the optical constants of chalcogenide GexAs20Se80-x (where x = 0, 5, 10, 15 and 20 at.%) thin films. Films of GexAs20Se80-x glasses were prepared by thermal evaporation of the bulk samples. The transmission spectra, T(λ), of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Swanepoel, based on the use of the maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing germanium content is found to affect the refractive index and the extinction coefficient of the GexAs20Se80-x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing germanium content the refractive index decreases while the optical band gap increases.

  18. SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2014-01-01

    Full Text Available In this work we prepared double-layer antireflection coatings (DARC by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC, while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm/SiNx:H (80 nm DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

  19. Nonlinear optics in germanium mid-infrared fiber material: Detuning oscillations in femtosecond mid-infrared spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Ordu

    2017-09-01

    Full Text Available Germanium optical fibers hold great promise in extending semiconductor photonics into the fundamentally important mid-infrared region of the electromagnetic spectrum. The demonstration of nonlinear response in fabricated Ge fiber samples is a key step in the development of mid-infrared fiber materials. Here we report the observation of detuning oscillations in a germanium fiber in the mid-infrared region using femtosecond dispersed pump-probe spectroscopy. Detuning oscillations are observed in the frequency-resolved response when mid-infrared pump and probe pulses are overlapped in a fiber segment. The oscillations arise from the nonlinear frequency resolved nonlinear (χ(3 response in the germanium semiconductor. Our work represents the first observation of coherent oscillations in the emerging field of germanium mid-infrared fiber optics.

  20. Morphology and swelling of Os(II) polyvinyl-bypyridile films

    Energy Technology Data Exchange (ETDEWEB)

    Ybarra, G. [Centro de Investigacion sobre Electrodeposicion y Procesos Superficiales, Instituto Nacional de Tecnologia Industrial, CC 157 (1650) San Martin (Argentina); Moina, C. [Centro de Investigacion sobre Electrodeposicion y Procesos Superficiales, Instituto Nacional de Tecnologia Industrial, CC 157 (1650) San Martin (Argentina); Molina, F.V. [INQUIMAE, Departamento de Quimica Inorganica, Analitica y Quimica Fisica, Facultad de Ciencias Exactas y Naturales, UBA, Ciudad Universitaria, Pabellon II, 1428 Buenos Aires (Argentina); Florit, M.I. [INIFTA, Facultad de Ciencias Exactas, UNLP, Sucursal 4, Casilla de Correo 16, 1900 La Plata (Argentina); Posadas, D. [INIFTA, Facultad de Ciencias Exactas, UNLP, Sucursal 4, Casilla de Correo 16, 1900 La Plata (Argentina)]. E-mail: dposadas@inifta.unlp.edu.ar

    2005-02-15

    In this work, we studied the changes in volume of an electroactive polymer as [Os(bipy){sub 2} (PVP){sub 10}Cl]{sup 2+}. The dependence of the polymer volume on the solution pH and applied potential was measured. The morphology of [Os(bipy){sub 2} (PVP){sub 10}Cl]{sup 2+}, deposited onto monocrystalline Si substrates, both by drop coating and by spin coating was studied by AFM. Drop-coated films show a globular structure on top of a thin and homogeneous film while spin-coated films are even and homogeneous. The volume changes with the pH of the external solution were measured following the changes in the globules size of drop-coated films. Also, the thickness dependence of spin-coated films on pH was measured by AFM. Both the size of the globules and the thickness of the films increase as the pH of the external solution decreases. The possible reasons for this increase are discussed. The volume change following the oxidation of a drop-coated polymer was estimated from the projected area obtained by optical microscopy with image capture. The images show an increase in the projected area as the film is progressively oxidized. The possible reasons for this increase in volume are discussed.

  1. Rare earth elements in germanium-bearing coal seams of the Spetsugli deposit (Primor'e Region, Russia)

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, V.V. [Russian Academy of Science, Moscow (Russian Federation)

    2005-06-01

    The paper presents first data on contents of lanthanoids and yttrium in germanium-bearing beds of the Spetsugli deposit, which vary along sampled cross sections from 86 to 316 ppm. It is shown that germanium-bearing coals are strongly enriched in yttrium and heavy lanthanoids as compared with coals located beyond the zone of germanium mineralization and with germanium-bearing coals of the Lincang deposit (South China). Vertical and lateral variations in REE concentrations and in REE patterns in germanium-bearing beds located at different hypsometric levels and different distances from supposed feeding channels of germanium-bearing solutions are considered. The REE distributions through beds show no correlation between REE and Ge contents. This is explained by diverse REE sources (granites of the basement and hydrothermal solutions of two generations) and by the different age of their accumulations in beds of the Spetsugli deposit. Reconstruction of the initial REE composition in germanium-bearing solutions circulating through coal-bearing formations during the Miocene at the stage of organic matter diagenesis shows that they were characterized by low concentrations of these elements and were relatively enriched in Eu and HREE. Anomalously high REE contents established in germanium-bearing coals are of epigenetic origin and accumulated after the formation of Ge mineralization. They were deposited by metalliferous REE-enriched and Ge-free or Ge-poor solutions of volcanic origin that circulated during the Pliocene-Early Quaternary time. In this regard, the Spetsugli deposit differs notably from the Lincang Ge-bearing coal deposit (South China), where the late epigenetic ore-formation stage probably did not take place.

  2. Development of segmented germanium detectors for neutrinoless double beta decay experiments

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing

    2009-06-09

    The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of {sup 76}Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse

  3. Femtosecond and nanosecond pulsed laser deposition of silicon and germanium

    Energy Technology Data Exchange (ETDEWEB)

    Reenaas, Turid Worren [Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim (Norway); Lee, Yen Sian [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chowdhury, Fatema Rezwana; Gupta, Manisha; Tsui, Ying Yin [Department of Electrical and Computer Engineering, University of Alberta (Canada); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Kok, Soon Yie [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-11-01

    Highlights: • Ge and Si were deposited by fs and ns laser at room temperature and at vacuum. • Ion of 10{sup 4} ms{sup −1} and 30–200 eV was obtained for ns ablation for Ge and Si. • Highly energetic ions of 10{sup 5} ms{sup −1} with 2–7 KeV were produced in fs laser ablation. • Nanocrystalline Si and Ge were deposited by using fs laser. • Nanoparticles < 10 nm haven been obtained by fs laser. - Abstract: 150 fs Ti:Sapphire laser pulsed laser deposition of Si and Ge were compared to a nanosecond KrF laser (25 ns). The ablation thresholds for ns lasers were about 2.5 J cm{sup −2} for Si and 2.1 J cm{sup −2} for Ge. The values were about 5–10 times lower when fs laser were used. The power densities were 10{sup 8}–10{sup 9} W cm{sup −2} for ns but 10{sup 12} W cm{sup −2} for fs. By using an ion probe, the ions emission at different fluence were measured where the emitting ions achieving the velocity in the range of 7–40 km s{sup −1} and kinetic energy in the range of 30–200 eV for ns laser. The ion produced by fs laser was measured to be highly energetic, 90–200 km s{sup −1}, 2–10 KeV. Two ion peaks were detected above specific laser fluence for both ns and fs laser ablation. Under fs laser ablation, the films were dominated by nano-sized crystalline particles, drastically different from nanosecond pulsed laser deposition where amorphous films were obtained. The ions characteristics and effects of pulse length on the properties of the deposited films were discussed.

  4. Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

    Science.gov (United States)

    Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

    2017-03-01

    Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.

  5. Speciation of europium (III) surface species on monocrystalline alumina using time-resolved laser-induced fluorescence-scanning near-field optical microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ghaleb, K.A.; Viala, F.; Miserque, F.; Salmon, L. [CEA Saclay, DEN/DANS/DPC/SCP, Lab Reactivite Surface et Interface, F-91191 Gif Sur Yvette, (France); Reiller, P. [CEA Saclay, DEN/DANS/DPC/SECR, Lab Speciat Radionucleides et Mol, F-91191 Gif Sur Yvette, (France); Moutiers, G. [CEA Saclay, DEN/DANS/DPC, Serv Chim Phys, F-91191 Gif Sur Yvette, (France)

    2008-07-01

    The aim of this work was to perform highly localized spectroscopic surface measurements by combining time-resolved laser spectroscopy and scanning near-field optical microscopy. The final purpose of that was to study surface sorption at the molecular level of trivalent ions in the framework of nuclear waste disposal assessment. Time-resolved laser spectroscopy presents the advantages of being selective, sensitive, and noninvasive and scanning near-field optical microscopy is a promising technique for high resolution surface speciation. Investigation of the interaction between trivalent europium and a monocrystalline alumina (11-bar02) surface was made using different conditions of concentration and pH. We found that the distribution of sorbed europium was always homogeneous with a decay time of europium (III) equal to 350 {mu}s {+-} 15 {mu}s. On the other hand, carbonate species with a decay time of 210 {mu}s {+-} 10 {mu}s or other hydroxide species with a decay time of 180 {mu}s {+-} 10 {mu}s were detected on the surface when a higher concentration or a higher pH solution, respectively, were used. Distribution of these species was heterogeneous and their associated fluorescence signal was relatively high, evoking a precipitated form. X-ray photoelectron spectroscopy (XPS) was also used on the same samples as a complementary technique. A binding energy of 1135.1 eV was obtained for the sorbed europium and another binding energy of 1134.4 eV was obtained for the hydroxide species, thus confirming the presence of two kinds of species on the surface. (authors)

  6. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    Science.gov (United States)

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  7. Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

    Directory of Open Access Journals (Sweden)

    Qifeng Lu

    2015-12-01

    Full Text Available In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide and hafnium oxide, respectively. X-ray Photoelectron Spectroscopy (XPS indicates the formation of GeOx and germanate at the interface. X-ray diffraction (XRD indicates that all the thin films remain amorphous for this deposition condition. The surface roughness was analyzed using an atomic force microscope (AFM for each sample. The electrical characterization shows very low hysteresis between ramp up and ramp down of the Capacitance-Voltage (CV and the curves are indicative of low trap densities. A relatively large leakage current is observed and the lowest leakage current among the four samples is about 1 mA/cm2 at a bias of 0.5 V for a Ti0.9Hf0.1O2 sample. The large leakage current is partially attributed to the deterioration of the interface between Ge and TixHf1–xO2 caused by the oxidation source from HfO2. Consideration of the energy band diagrams for the different materials systems also provides a possible explanation for the observed leakage current behavior.

  8. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    Science.gov (United States)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  9. Film/NotFilm

    OpenAIRE

    Willems, Gertjan

    2016-01-01

    Although Samuel Beckett (1906-1989) showed a genuine interest in audio-visual media in his fascinating and innovative radio plays and television works, and in 1936 even wrote a letter to Sergei Eisenstein to be accepted to the famous Soviet film school VGIK, the 22-minute Film (1965) was his only venture into cinema. Beckett conceived the film, wrote the screenplay, supervised the production and, as one of the film’s crew members recalled and as the director Alan Schneider himself acknowledge...

  10. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Energy Technology Data Exchange (ETDEWEB)

    Heusser, G., E-mail: gerd.heusser@mpi-hd.mpg.de; Weber, M., E-mail: marc.weber@mpi-hd.mpg.de; Hakenmüller, J. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100, Assergi, AQ (Italy); Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany)

    2015-11-09

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  11. Catalytic conversion of carbohydrates into 5-hydroxymethylfurfural by germanium(IV) chloride in ionic liquids.

    Science.gov (United States)

    Zhang, Zehui; Wang, Qian; Xie, Haibo; Liu, Wujun; Zhao, Zongbao Kent

    2011-01-17

    Direct conversion of carbohydrates into 5-hydroxymethylfurfural (HMF) catalyzed by germanium(IV) chloride in ionic liquids has been investigated in search of an efficient and environmentally friendly process. Monosaccharides D-fructose and D-glucose, disaccharides sucrose and maltose, and even the polysaccharide cellulose were successfully converted into HMF with good yields under mild conditions (yield up to 92 % in 5 min in the case of fructose). The structure of ionic liquids, catalyst loading, reaction temperature and water content had noticeable effects on this catalytic system. Addition of 5 Å molecular sieves during the dehydration of glucose resulted in an increase in HMF yield from 38.4 % to 48.4 %. A mechanism for glucose conversion to HMF catalyzed by germanium(IV) chloride was proposed according to ¹³C NMR spectra obtained in situ under different conditions using D-glucose-2-¹³C as the substrate.

  12. Cosmogenic activation of Germanium and its reduction for low background experiments

    CERN Document Server

    Barabanov, I; Bezrukov, L; Denisov, A; Kornoukhov, V; Sobolevsky, N

    2006-01-01

    Production of $^{60}$Co and $^{68}$Ge from stable isotopes of Germanium by nuclear active component of cosmic rays is a principal background source for a new generation of $^{76}$Ge double beta decay experiments like GERDA and Majorana. The biggest amount of cosmogenic activity is expected to be produced during transportation of either enriched material or already grown crystal. In this letter properties and feasibility of a movable iron shield are discussed. Activation reduction factor of about 10 is predicted by simulations with SHIELD code for a simple cylindrical configuration. It is sufficient for GERDA Phase II background requirements. Possibility of further increase of reduction factor and physical limitations are considered. Importance of activation reduction during Germanium purification and detector manufacturing is emphasized.

  13. A Low-Noise Germanium Ionization Spectrometer for Low-Background Science

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E.; Colaresi, Jim; Collar, Juan I.; Fast, James E.; Hossbach, Todd W.; Orrell, John L.; Overman, Cory T.; Scholz, Bjorn; Vandevender, Brent A.; Yocum, K. Michael

    2016-12-01

    Recent progress on the development of very low energy threshold high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a low mass, WIMP dark matter direct detection search. The integrated detector and low background cryostat achieved noise performance of 98 eV full-width half-maximum of an input electronic pulse generator peak and gamma-ray energy resolution of 1.9 keV full-width half-maximum at the 60Co gamma-ray energy of 1332 keV. This Transaction reports the thermal characterization of the low-background cryostat, specifications of the newly prepared 1.2 kg p-type point contact germanium detector, and the ionization spectroscopy – energy resolution and energy threshold – performance of the integrated system.

  14. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    Energy Technology Data Exchange (ETDEWEB)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-12-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  15. Schottky contacts in germanium nanowire network devices synthesized from nickel seeds

    Science.gov (United States)

    Gouveia, R. C.; Rodrigues, A. D.; Leite, E. R.; Chiquito, A. J.

    2016-10-01

    This paper presents reliable process to the synthesis of germanium nanowires by the vapor-liquid-solid method using nickel as an alternative catalyst to gold, the most commonly used metal, without toxic gas precursors. The structural study showed single-crystalline germanium nanowires with diamond structure, lengths of tens of microns and diameters smaller than 40 nm. The reduced dimensions of the nanowires led to phonons localization effect, with correlation lengths of the same order of the nanowires diameters. Additionally, the analysis of electronic properties of metal-nanowire-metal devices indicated the presence of Schottky barriers, whose values depend linearly on temperature. This linear dependence was assigned to the tunneling process through an insulator layer (mostly GeOx) at the metal-semiconductor interface. These results point to the existence of another channel for electrons transference from metal to semiconductor being very significant to electronic devices fabrication.

  16. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    CERN Document Server

    Bellucci, S

    2016-01-01

    The paper devoted to investigation of volume reflection and channeling processes of ultrarela- tivistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of Hartree-Fock method and correct choice of Debye tem- perature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the presented in the paper universal form of equations for volume reflection gives true description of the process at a wide range of particle energies. Standing on this study we make predictions for mean angle reflection (as a function of bending radius) of positive and negative particles for germanium (110) and (111) crystallographic planes.

  17. Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes

    Science.gov (United States)

    Yuan, Hao-Chih; Shin, Jonghyun; Qin, Guoxuan; Sun, Lei; Bhattacharya, Pallab; Lagally, Max G.; Celler, George K.; Ma, Zhenqiang

    2009-01-01

    This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium (Ge) membranes. Ge membranes of 250nm thickness with selectively ion-implantation doped regions were released from a germanium-on-insulator substrate and integrated with a 175-μm-thick polyethylene terephthalate substrate via a dry printing technique. Photodiodes configured in lateral p-i-n configuration using the flexible Ge membranes with an intrinsic region width of 10μm exhibit an external quantum efficiency that varies from 5% at 411nm to 42% at 633nm under -1V bias condition. These results demonstrate the potential of utilizing single-crystal Ge-membrane photodiodes for imaging applications and as solar cells on objects with arbitrary curvatures and shapes.

  18. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    Directory of Open Access Journals (Sweden)

    S. Bellucci

    2016-12-01

    Full Text Available The paper is devoted to the investigation of volume reflection and channeling processes of ultrarelativistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of the Hartree-Fock method and the correct choice of the Debye temperature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the universal form of equations for volume reflection presented in the paper gives a true description of the process at a wide range of particle energies. Standing on this study we make predictions for the mean angle reflection (as a function of the bending radius of positive and negative particles for germanium (110 and (111 crystallographic planes.

  19. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium

    Science.gov (United States)

    Dominici, Stefano; Wen, Hanqing; Bertazzi, Francesco; Goano, Michele; Bellotti, Enrico

    2016-05-01

    The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 1016 cm-3 to 5 × 1019 cm-3. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

  20. Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

    Science.gov (United States)

    Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

    2013-07-31

    Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

  1. Empirical Correction of Crosstalk in a Low-Background Germanium γ–γ Analysis System

    Energy Technology Data Exchange (ETDEWEB)

    Keillor, Martin E.; Erikson, Luke E.; Aalseth, Craig E.; Day, Anthony R.; Fuller, Erin S.; Glasgow, Brian D.; Hoppe, Eric W.; Hossbach, Todd W.; Mizouni, Leila K.; Myers, Allan W.; Overman, Cory T.; Seifert, Allen; Stavenger, Timothy J.

    2013-05-01

    ABSTRACT The Pacific Northwest National Laboratory is currently developing a custom software suite capable of automating many of the tasks required to accurately analyze coincident signals within gamma spectrometer arrays. During the course of this work, significant crosstalk was identified in the energy determination for spectra collected with a new low-background intrinsic germanium (HPGe) array at PNNL. The HPGe array is designed for high detection efficiency, ultra-low-background performance, and sensitive gamma gamma coincidence detection. The first half of the array, a single cryostat containing 7 HPGe crystals, was recently installed into a new shallow underground laboratory facility. This update will present a brief review of the germanium array, describe the observed crosstalk, and present a straight-forward empirical correction that significantly reduces the impact of this crosstalk on the spectroscopic performance of the system.

  2. Analog Readout and Analysis Software for the Ultra-High Rate Germanium (UHRGe) Project

    Energy Technology Data Exchange (ETDEWEB)

    Fast, James E.; Aguayo Navarrete, Estanislao; Evans, Allan T.; VanDevender, Brent A.; Rodriguez, Douglas C.; Wood, Lynn S.

    2011-09-01

    High-resolution high-purity germanium (HPGe) spectrometers are needed for Safeguards applications such as spent fuel assay and uranium hexafluoride cylinder verification. In addition, these spectrometers would be applicable to other high-rate applications such as non-destructive assay of nuclear materials using nuclear resonance fluorescence. Count-rate limitations of today's HPGe technologies, however, lead to concessions in their use and reduction in their efficacy. Large-volume, very high-rate HPGe spectrometers are needed to enable a new generation of nondestructive assay systems. The Ultra-High Rate Germanium (UHRGe) project is developing HPGe spectrometer systems capable of operating at unprecedented rates, 10 to 100 times those available today. This report documents current status of developments in the analog electronics and analysis software.

  3. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  4. Characterization of thin-film multilayers using magnetization curves and modeling of low-angle X-ray diffraction data

    Energy Technology Data Exchange (ETDEWEB)

    Lane, M. [Emory & Henry College, VA (United States); Chaiken, A.; Michel, R.P. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    We have characterized thin-film multilayers grown by ion-beam sputtering using magnetization curves and modeling of low-angle x-ray diffraction data. In our films, we use ferromagnetic layer = Co, Fe, and NiFe and spacer layer = Si, Ge, FeSi{sub 2}, and CoSi{sub 2}. We have studied the effects of (1) deposition conditions; (2) thickness of layers; (3) different layer materials; and (4) annealing. We find higher magnetization in films grown at 1000V rather than 500V and in films with spacer layers of 50{angstrom} rather than 100{angstrom}. We find higher coercivity in films with cobalt grown on germanium rather than silicon, metal grown on gold underlayers rather than on glass substrates, and when using thinner spacer layers. Finally, modeling reveals that films grown with disilicide layers are more thermally stable than films grown with silicon spacer layers.

  5. Transparent conductive Hf-doped In2O3 thin films by RF sputtering technique at low temperature annealing

    Science.gov (United States)

    Wang, G. H.; Shi, C. Y.; Zhao, L.; Diao, H. W.; Wang, W. J.

    2017-03-01

    Hf-doped In2O3 transparent conductive polycrystalline films (IHFO) were grown at a low substrate temperature by radio frequency magnetron sputtering for the applications of silicon-based solar cell. The effect of argon flow rate on the electrical and optical properties of the films was investigated. Low temperature thermal treatment improved IHFO films properties, with the optimal Hall mobility of 79.6 cm2/Vs and resistivity of 3.76 × 10-4 Ω cm. The average transmittance of the 807 nm thick IHFO films in the range of 300-1500 nm was above 83%. The carrier density was utilized to evaluate the plasma wavelength of IHFO conducting film which was 1.8 μm. The optimized IHFO film was then applied to amorphous silicon germanium thin film solar cells as the contacting layer. Compared to the cell without such a layer, the efficiency was higher by 0.35%.

  6. Neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    Arun Kumar Soma; Lakhwinder Singh; Manoj Kumar Singh; Venktesh Singh; Henry T Wong; on behalf of the TEXONO Collaboration

    2014-11-01

    Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng Reactor Neutrino Laboratory. Highlights of the physics motivation, our R&D programme, as well as the status and plans are presented.

  7. Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

    Science.gov (United States)

    Haller, E. E.; Itoh, K. M.; Beeman, J. W.

    1996-01-01

    Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

  8. Development of a one-dimensional microstrip germanium detector for Compton scattering experiment at SPring-8

    CERN Document Server

    Toyokawa, H; Mizumaki, M; Sakurai, Y; Suzuki, M; Hiraoka, N; Sakai, N

    2001-01-01

    Two prototypes of a one-dimensional microstrip germanium detector were fabricated with seven strips, having different pitches of 200 and 350 mu m. Owing to its insensitivity to hole-diffusion process, the latter one has attained a spatial resolution as high as 350 mu m, an energy resolution better than 1.4%, and a peak efficiency around 50% at an X-ray energy of 80 keV.

  9. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

    DEFF Research Database (Denmark)

    Balslev, I.

    1966-01-01

    The indirect optical absorption edge in silicon and germanium has been studied in the presence of shear strain. The splitting observed in the transmission spectrum is dependent on the direction and magnitude of the applied stress and on the polarization of the light with respect to the stress axi...... with uniaxial stress. A special experimental technique using a vibrating slit in the spectrometer was used in order to obtain an accurate determination of the fine structure in the absorption spectrum....

  10. Pure germanium dioxide hollow-core fiber for transmitting CO2 laser

    Institute of Scientific and Technical Information of China (English)

    侯兰田; 付连符; 吕平; 韩玉华; 李秋更; 徐立宣; 李天柱

    1995-01-01

    A method of fabricating pure germanium dioxide hollow-core fibers has been introduced for the first time. The output power of the fabricated fiber can come to 18 W, with the transmission loss of 1.23 dB/m at 10.6 μm. The mechanism of transmitting CO2 laser by the fiber is analyzed, the transmitting loss is further discussed and its application fields are envisaged.

  11. A model for the effects of germanium on silica biomineralization in choanoflagellates

    OpenAIRE

    Marron, Alan O.; Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    This is the final version of the article. It first appeared from Royal Society Publishing via http://dx.doi.org/10.1098/rsif.2016.0485 Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanof...

  12. Fibroblastic activities post implantation of cobalt chromium alloy and pure germanium in rabbits.

    Science.gov (United States)

    Carter, J M; Natiella, J R; Baier, R E; Natiella, R R

    1984-02-01

    Different preimplantation surface finishes were applied to surgical vitallium discs and germanium prisms implanted for 20 days within the back muscles of adult rabbits. Histopathologic analysis of the numbers of nuclei of active fibroblasts immediately adjacent to the implants was carried out. The mean apparent volume fractions (MAVF) for the subdermal implant sites were found to depend on the surface cleanliness of the implant, the cleanest or highest-surface-energy surfaces giving the highest MAVF values for active fibroblasts.

  13. Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

    Institute of Scientific and Technical Information of China (English)

    Tingting Sun; Guiyun Kai; Zhi Wang; Shuzhong Yuan; Xiaoyi Dong

    2008-01-01

    Germanium doping in silica can be used as a method for nonlinearity enhancement.Properties of the enhanced nonlinearity in photonic crystal fiber(PCF)with a GeO2-doped core are investigated theoretically by using all-vector finite element method.Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration,furthermore,optimal radius of the doped region should be considered for the desired operating wavelength.

  14. Enhancement of electromagnetic showers initiated by ultrarelativistic electrons in aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Mikkelsen, U.; Kirsebom, K.; Medenwaldt, R.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.; Biino, C.; Moore, R.; Vilakazi, Z. Z.

    1996-10-01

    The distribution of the energy deposited in thin silicon detectors placed on the downstream side of a thick germanium single crystal bombarded with a 70, 150 and 250 GeV electron beam along directions close to the axis or {110} and {100} planes has been measured. The enhancement of the shower with respect to random incidence, as reflected in the higher value of the centroid of the distribution, is studied as a function of the incidence angle to the axis or plane.

  15. Doping of germanium by ion-implantation and laser annealing in the melting regime

    OpenAIRE

    Milazzo, Ruggero

    2015-01-01

    Germanium is the main candidate for replacing silicon in active regions in future complementary metal-oxide transistors due to: (i) its higher mobility of charge carriers that makes it able to attain higher drive current; (ii) the availability of high-k materials, excellent substitutes for its unstable native oxide and (iii) its lower melting point that allows lower processing temperatures. However, a downscaling beyond 15-nm necessarily requires higher doping levels (higher than 1x10^20cm^-3...

  16. Internal friction in intrinsic and n-type germanium and silicon

    Science.gov (United States)

    Gerk, A. P.; Williams, Wendell S.

    1982-05-01

    The dependence of the high-temperature internal friction of germanium and silicon, both intrinsic and highly n type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. An acoustoelectric peak in both germanium and silicon was detected and found to agree well with the theory of Weinreich. The high-temperature dislocation-dependent damping in intrinsic germanium and silicon was studied and seen to be consistent with most previous studies. If deformed at high temperature and allowed to anneal, highly doped n-type material behaved intrinsically due to preferential precipitation at dislocations; however, if deformed at moderate temperatures and not allowed to anneal, such crystals exhibited a greatly enhanced dislocation-dependent internal friction which depended on the extrinsic carrier concentration. A theory was developed for dislocation damping in semiconductors and was found to agree well with experimental results. The model is based upon electronic viscous damping of dislocations by excess current carriers whose lifetimes are controlled by Auger recombination processes.

  17. Novel germanium/polypyrrole composite for high power lithium-ion batteries.

    Science.gov (United States)

    Gao, Xuanwen; Luo, Wenbin; Zhong, Chao; Wexler, David; Chou, Shu-Lei; Liu, Hua-Kun; Shi, Zhicong; Chen, Guohua; Ozawa, Kiyoshi; Wang, Jia-Zhao

    2014-08-29

    Nano-Germanium/polypyrrole composite has been synthesized by chemical reduction method in aqueous solution. The Ge nanoparticles were directly coated on the surface of the polypyrrole. The morphology and structural properties of samples were determined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Thermogravimetric analysis was carried out to determine the polypyrrole content. The electrochemical properties of the samples have been investigated and their suitability as anode materials for the lithium-ion battery was examined. The discharge capacity of the Ge nanoparticles calculated in the Ge-polypyrrole composite is 1014 mAh g(-1) after 50 cycles at 0.2 C rate, which is much higher than that of pristine germanium (439 mAh g(-1)). The composite also demonstrates high specific discharge capacities at different current rates (1318, 1032, 661, and 460 mAh g(-1) at 0.5, 1.0, 2.0, and 4.0 C, respectively). The superior electrochemical performance of Ge-polypyrrole composite could be attributed to the polypyrrole core, which provides an efficient transport pathway for electrons. SEM images of the electrodes have demonstrated that polypyrrole can also act as a conductive binder and alleviate the pulverization of electrode caused by the huge volume changes of the nanosized germanium particles during Li(+) intercalation/de-intercalation.

  18. Effect of normal processes on thermal conductivity of germanium, silicon and diamond

    Indian Academy of Sciences (India)

    Banashree Saikai; Anil Kumar

    2008-07-01

    The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between different phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.

  19. Experimentally determining the relative efficiency of spherically bent germanium and quartz crystals

    Science.gov (United States)

    Brown, G. V.; Beiersdorfer, P.; Hell, N.; Magee, E.

    2016-11-01

    We have used the EBIT-I electron beam ion trap at the Lawrence Livermore National Laboratory and a duplicate Orion High Resolution X-ray Spectrometer (OHREX) to measure the relative efficiency of a spherically bent quartz (10 1 ¯ 1) crystal (2d = 6.687 Å) and a spherically bent germanium (111) crystal (2d = 6.532 Å). L-shell X-ray photons from highly charged molybdenum ions generated in EBIT-I were simultaneously focussed and Bragg reflected by each crystal, both housed in a single spectrometer, onto a single CCD X-ray detector. The flux from each crystal was then directly compared. Our results show that the germanium crystal has a reflection efficiency significantly better than the quartz crystal, however, the energy resolution is significantly worse. Moreover, we find that the spatial focussing properties of the germanium crystal are worse than those of the quartz crystal. Details of the experiment are presented, and we discuss the advantages of using either crystal on a streak-camera equipped OHREX spectrometer.

  20. Performance of bare high-purity germanium detectors in liquid argon for the GERDA experiment

    CERN Document Server

    Heider, Marik Barnabé; Chkvorets, Oleg; Di Vacri, Assunta; Gusev, Konstantin; Schönert, Stefan; Shirchenko, Mark

    2008-01-01

    The GERmanium Detector Array, GERDA, will search for neutrinoless double beta decay in 76Ge at the National Gran Sasso Laboratory of the INFN. Bare high-purity germanium detectors enriched in 76Ge will be submerged in liquid argon serving simultaneously as a shield against external radioactivity and as a cooling medium. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, will be redeployed. Before operating the enriched detectors, tests are performed with non-enriched bare HPGe detectors in the GERDA underground Detector Laboratory to test the Phase-I detector assembly, the detector handling protocols, the refurbishment technology and to study the long-term stability in liquid argon. The leakage currents in liquid argon and liquid nitrogen have been extensively studied under varying gamma irradiation conditions. In total three non-enriched high-purity p-type prototype germanium detectors have been operated successfully. The dete...

  1. CDEX-1 1 kg point-contact germanium detector for low mass dark matter searches

    Science.gov (United States)

    Kang, Ke-Jun; Yue, Qian; Wu, Yu-Cheng; Cheng, Jian-Ping; Li, Yuan-Jing; Bai, Yang; Bi, Yong; Chang, Jian-Ping; Chen, Nan; Chen, Ning; Chen, Qing-Hao; Chen, Yun-Hua; Chuang, Yo-Chun; Deng, Zhi; Du, Qiang; Gong, Hui; Hao, Xi-Qing; He, Qing-Ju; Hu, Xin-Hui; Huang, Han-Xiong; Huang, Teng-Rui; Jiang, Hao; Li, Hau-Bin; Li, Jian-Min; Li, Jin; Li, Jun; Li, Xia; Li, Xin-Ying; Li, Xue-Qian; Li, Yu-Lan; Liao, Heng-Yi; Lin, Fong-Kay; Lin, Shin-Ted; Liu, Shu-Kui; Lü, Lan-Chun; Ma, Hao; Mao, Shao-Ji; Qin, Jian-Qiang; Ren, Jie; Ren, Jing; Ruan, Xi-Chao; Shen, Man-Bin; Lakhwinder, Singh; Manoj, Kumar Singh; Arun, Kumar Soma; Su, Jian; Tang, Chang-Jian; Tseng, Chao-Hsiung; Wang, Ji-Min; Wang, Li; Wang, Qing; Wong Tsz-King, Henry; Wu, Shi-Yong; Wu, Wei; Wu, Yu-Cheng; Xing, Hao-Yang; Xu, Yin; Xue, Tao; Yang, Li-Tao; Yang, Song-Wei; Yi, Nan; Yu, Chun-Xu; Yu, Hao; Yu, Xun-Zhen; Zeng, Xiong-Hui; Zeng, Zhi; Zhang, Lan; Zhang, Yun-Hua; Zhao, Ming-Gang; Zhao, Wei; Zhong, Su-Ning; Zhou, Zu-Ying; Zhu, Jing-Jun; Zhu, Wei-Bin; Zhu, Xue-Zhou; Zhu, Zhong-Hua

    2013-12-01

    The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P+ electrode and the outside N+ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P+ and N+ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments.

  2. The CDEX-1 1 kg Point-Contact Germanium Detector for Low Mass Dark Matter Searches

    CERN Document Server

    Kang, Ke-Jun; Wu, Yu-Cheng; Cheng, Jian-Ping; Li, Yuan-Jing; Bai, Yang; Bi, Yong; Chang, Jian-Ping; Chen, Nan; Chen, Ning; Chen, Qing-Hao; Chen, Yun-Hua; Chuang, You-Chun; Dend, Zhi; Du, Qiang; Gong, Hui; Hao, Xi-Qing; He, Qing-Ju; Hu, Xin-Hui; Huang, Han-Xiong; Huang, Teng-Rui; Jiang, Hao; Li, Hau-Bin; Li, Jian-Min; Li, Jin; Li, Jun; Li, Xia; Li, Xin-Ying; Li, Xue-Qian; Li, Yu-Lan; Liao, Heng-Ye; Lin, Fong-Kay; Lin, Shin-Ted; Liu, Shu-Kui; Lv, Lan-Chun; Ma, Hao; Mao, Shao-Ji; Qin, Jian-Qiang; Ren, Jie; Ren, Jing; Ruan, Xi-Chao; Shen, Man-Bin; Singh, Lakhwinder; Singh, Manoj Kumar; Soma, Arun Kumar; Su, Jian; Tang, Chang-Jian; Tseng, Chao-Hsiung; Wang, Ji-Min; Wang, Li; Wang, Qing; Wong, Tsz-King Henry; Wu, Shi-Yong; Wu, Wei; Xing, Hao-Yang; Xu, Yin; Xue, Tao; Yang, Li-Tao; Yang, Song-Wei; Yi, Nan; Yu, Chun-Xu; Yu, Hao; Yu, Xun-Zhen; Zeng, Xiong-Hui; Zeng, Zhi; Zhang, Lan; Zhang, Yun-Hua; Zhao, Ming-Gang; Zhao, Wei; Zhong, Su-Ning; Zhou, Zu-Ying; Zhu, Jing-Jun; Zhu, Wei-Bin; Zhu, Xue-Zhou; Zhu, Zhong-Hua

    2013-01-01

    The CDEX Collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold p-type point-contact germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact p+ electrode and the outside n+ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both p+ and n+ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This...

  3. Imaging the oblique propagation of electrons in germanium crystals at low temperature and low electric field

    Energy Technology Data Exchange (ETDEWEB)

    Moffatt, R. A., E-mail: rmoffatt@stanford.edu; Cabrera, B.; Corcoran, B. M.; Kreikebaum, J. M.; Redl, P.; Shank, B.; Yen, J. J. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Young, B. A. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Department of Physics, Santa Clara University, Santa Clara, California 95053 (United States); Brink, P. L.; Cherry, M.; Tomada, A. [SLAC National Accelerator Facility, Menlo Park, California 94025 (United States); Phipps, A.; Sadoulet, B.; Sundqvist, K. M. [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-01-11

    Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment produces a full two-dimensional image of the oblique electron and hole propagation and the quantum transitions of electrons between valleys for electric fields oriented along the [0,0,1] direction. Charge carriers are excited with a focused laser pulse on one face of a germanium crystal and then drifted through the crystal by a uniform electric field of strength between 0.5 and 6 V/cm. The pattern of charge density arriving on the opposite face is used to reconstruct the trajectories of the carriers. Measurements of the two-dimensional pattern of charge density are compared in detail with Monte Carlo simulations developed for the Cryogenic Dark Matter Search (SuperCDMS) to model the transport of charge carriers in high-purity germanium detectors.

  4. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

    Science.gov (United States)

    Sigillito, A. J.; Jock, R. M.; Tyryshkin, A. M.; Beeman, J. W.; Haller, E. E.; Itoh, K. M.; Lyon, S. A.

    2015-12-01

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T2 ) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T2's while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T2 and the spin-lattice relaxation (T1) times for 75As and 31P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to 73Ge nuclear spins limits the coherence in samples with significant amounts of 73Ge. For the most highly enriched samples, we find that T1 limits T2 to T2=2 T1. We report an anisotropy in T1 and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T2 in samples with 73Ge.

  5. Hybrid co-deposition of mixed-valent molybdenum–germanium oxides (Mo{sub x}Ge{sub y}O{sub z}): A route to tunable optical transmission

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, Neil R., E-mail: neil.murphy.1@us.af.mil [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Sun, Lirong, E-mail: lirong.sun.2.ctr@us.af.mil [General Dynamics Information Technology, 5100 Springfield Street, Dayton, OH 45431 (United States); Jones, John G., E-mail: John.jones.66@us.af.mil [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Grant, John T., E-mail: john.grant.5.ctr@us.af.mil [General Dynamics Information Technology, 5100 Springfield Street, Dayton, OH 45431 (United States)

    2015-09-01

    Mixed-valent oxides of molybdenum and germanium were deposited simultaneously using reactive magnetron co-deposition within an oxygen–argon environment. The films' stoichiometry, optical, and physical properties were varied through changes in oxygen partial pressure induced by systematic variation of the potential applied to the molybdenum cathode. The oxygen partial pressure was determined from the drop in pressure as measured by a capacitance manometer, assuming constant argon partial pressure. To facilitate deposition, a constant power of 100 W DC was applied to the germanium cathode, while power was applied to the molybdenum target using a modulated pulse power supply. Modulated pulse power magnetron sputtering was used due to its ability to generate high target power densities, allowing for rapid reduction of oxygen on the surface of the “oxygen poisoned” molybdenum cathode, as well as for its highly metallic plasma resulting in increased oxygen-gettering capability. Changes in the modulated pulse power supply's capacitor bank voltage load, stepped from settings of 300 to 380 V, resulted in films ranging from mixtures of transparent GeO{sub 2} (Ge{sup 4+}) and MoO{sub 3} (Mo{sup 6+}) to the introduction of various absorptive ionic species including Mo{sup 5+}, Mo{sup 4+}, Ge{sup 2+} and Ge{sup 0}, as determined from X-ray photoelectron spectroscopy. The presence of each of the aforementioned ions results in characteristic changes in the films' band energies and optical absorption. As deposited Mo{sub x}Ge{sub y}O{sub z} thin films grown using this method have been shown to have optical gap energies that are able to be tailored between 3.57 eV and 0.18 eV, spanning useful ranges for devices operating in the visible and near-infrared. - Highlights: • We utilize a hybrid co-sputtering approach to deposit colorful mixed oxide coatings. • Films are deposited with conventional and ionized physical vapor deposition methods. • Film optical

  6. A catalyst-free synthesis of germanium nanowires obtained by combined X-ray chemical vapour deposition of GeH$_4$ and low-temperature thermal treatment techniques

    Indian Academy of Sciences (India)

    CHIARA DEMARIA; ALDO ARRAIS; PAOLA BENZI; ENRICO BOCCALERI; PAOLA ANTONIOTTI; ROBERTO RABEZZANA; LORENZA OPERTI

    2016-04-01

    A catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and lowtemperature thermal treatments, which has not been applied since so far to the growth of germanium nanowires (Ge-NWs), produced high yields of the nanoproducts with theGeH4 reactant gas. Nanowires were grown on both surfaces of a conventional deposition quartz substrate. They were featured with high purity and very large aspect ratios (ranging from 100 to 500). Products were characterized by scanning electron microscopy with energy-dispersiveatomic X-ray fluorescence and transmission electron microscopies, X-ray powder diffraction diffractometry, thermogravimetric analysis with differential scanning calorimetry, vibrational infrared and Raman and ultraviolet–visible–near infrared spectroscopies. A quantitative nanowire bundles formation was observed in the lower surface of the quartz substrate positioned over a heating support, whilst spots of nanoflowers constituted by Ge-NWs emerged from a bulk amorphous germanium film matter, deposited on the upper surface of the substrate. Thenanoproducts were characterized by crystalline core morphology, providing semiconductive features and optical band gap of about 0.67 eV. The possible interpretative base-growth mechanisms of the nanowires, stimulated bythe concomitant application of radiant and thermal conditions with no specific added metal catalyst, are hereafter investigated and presented.

  7. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Irlbeck, Sabine

    2014-01-30

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  8. Transmission electron microscope study of the topotactic reaction of (0 0 1), (0 1 1) and (1 1 1) Ag films and Te

    Energy Technology Data Exchange (ETDEWEB)

    Safran, G.; Geszti, O.; Radnoczi, G

    2003-09-01

    The formation, structure and morphology of silver telluride was investigated in the reaction of (0 0 1), (0 1 1) and (1 1 1) single crystalline Ag films with vacuum deposited Te. Silver films 30-40 nm in thickness were deposited by thermal evaporation onto water- and chlorine-treated NaCl. Onto this silver 1-40 nm of tellurium were deposited at 100 and 200 deg. C. The Ag-Te reaction occurred during Te deposition. Accordingly, formation of the compound phase was investigated from the nucleation stage through complete tellurization on either side of the polymorphic phase transformation temperature (T{sub c}=150 deg. C). Transmission electron microscope and selected area electron diffraction showed that monoclinic silver telluride (Ag{sub 2}Te) of different morphology and texture was always formed. The orientation of silver and monoclinic phase upon differently oriented monocrystalline Ag films and at deposition temperatures around T{sub c} is discussed.

  9. Analysis of the dead layer of a detector of germanium with code ultrapure Monte Carlo SWORD-GEANT; Analisis del dead layer de un detector de germanio ultrapuro con el codigo de Monte Carlo SWORDS-GEANT

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo, S.; Querol, A.; Ortiz, J.; Rodenas, J.; Verdu, G.

    2014-07-01

    In this paper the use of Monte Carlo code SWORD-GEANT is proposed to simulate an ultra pure germanium detector High Purity Germanium detector (HPGe) detector ORTEC specifically GMX40P4, coaxial geometry. (Author)

  10. Theoretical and empirical studies of impurity incorporation into beta-SiC thin films during epitaxial growth

    Science.gov (United States)

    Kim, H. J.; Davis, R. F.

    1986-11-01

    A theoretical determination of the vapor species present, and their respective partial pressures, is made using the SOLGASMIX-PV program for the n-type and p-type dopants of N and P, and B, respectively, under conditions used to grow monocrystalline beta-SiC thin films via CVD. The model shows that Al and P behave ideally while B and N apparently interact with the C or Si in the SiC or fill normally unoccupied interstitial positions. The relationship between the carrier concentrations or the atomic concentrations and the partial pressure of the dopant source gases is linear and parallel. The more efficient n-type and p-type dopants of N and Al have been used to produce what is suggested to be the first p-n junction diode in a beta-SiC film.

  11. Determination of Solid State Solubility of the Components in the Ag-Ge Film System

    Directory of Open Access Journals (Sweden)

    A.A. Minenkov

    2014-11-01

    Full Text Available The efficiency of determination of solid state solubility of the components in the system with an eutectic type of interaction (Ag-Ge by means of measuring the sample electrical resistance during thermal cycling has been shown. Film systems were formed in a vacuum by sequential condensation of components. The solubility curve of germanium in silver, obtained from the study of the samples with silver film thickness of 100 nm, is in good agreement with available literature data. The activation energy of grain-boundary diffusion has been estimated as 0,8 eV.

  12. Investigation of Surface Roughness of Single Point Diamond Turned Germanium Substrate by Coherence Correlation Interferometry and Image Processing

    Science.gov (United States)

    Gupta, Shivani; Khatri, Neha; Karar, Vinod; Dhami, S. S.

    2016-09-01

    Germanium is a widely used material in the infrared range. Single crystal germanium is used as semiconductor and optical material due to its salient features like high refractive index and proper working in cryogenic conditions. Thus, germanium is an important substrate for infrared lens having many applications in thermal imaging cameras, optical telescopes and miniaturization of infrared optical elements. These applications require optical elements of excellent surface quality and high dimensional accuracy. In addition to fulfil the demands, ultraprecision machine is used to fabricate the optical components. In this work, single crystal germanium (111) mirror is fabricated by using single point diamond tool with, negative rake angle. A large number of experiments are performed to achieve the surface finish of nanometric range. The best and worst combinations of process parameters are found on the basis of surface roughness with the help of coherence correlation interferometry(CCI) measurement and image processing using Canny, Prewitt, Roberts and Sobel edge filters and histogram. These results can be used for fabrication of diffractive optical elements and aspheric lenses of germanium.

  13. Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

    Energy Technology Data Exchange (ETDEWEB)

    Volynets, Oleksandr

    2012-07-27

    Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

  14. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  15. Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

    Directory of Open Access Journals (Sweden)

    Ionel Stavarache

    2016-10-01

    Full Text Available Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 % into SiO2. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO2 and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge–Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO2/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW−1, fast response time (0.5 µs at 4 kHz and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO2 matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO2 matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si

  16. Investigation of carbon profiles for enhanced boron confinement and improved carrier transport in strained silicon germanium nanolayers for heterojunction bipolar transistors

    Science.gov (United States)

    Enicks, Darwin Gene

    This research covers a breadth of topics, in Chapters 1 through 7, ranging from the crystal lattice, to dopant diffusion in SiGe, to SiGe and SiGeC chemical vapor deposition, to the Si/SiGe and Si/SiGeC energy band structure, and NPN SiGeC HBT AC and DC characteristics. Chapters 8 and 9 contain the results of the research, which relates the film growth and carbon positioning to boron diffusion, sheet resistance, and device performance; specifically current gain, fmax, and noise figures of merit. The first objective of the dissertation was to investigate carbon doping profiles in nano-layers (≤32 nm) of silicon germanium (Si1-xGe x), and provide an understanding of "remote carbon boron confinement" (RCBC), which is demonstrated to exploit the advantages of carbon to increase NPN HBT (heterojunction bipolar transistor) performance, reduce base resistance, and improve overall noise figures of merit. The second objective was to investigate the noise characteristics of this method compared to the standard method of placing carbon throughout the lattice, which is known as "uniform carbon boron confinement" (UCBC). The current technological development towards smaller and faster devices has forced engineers and scientists to look into materials other than silicon, but which are highly compatible. A natural choice is the Si1-xGe x alloy, since Ge is also a Group IV. Si1-xGex has the same lattice structure as Si, but its lattice constant is 4.2% larger (aSi = 0.543nm, aGe = 0.567nm), and the bandgap is less than that of Si (Eg_Si = 1.11eV, Eg_Ge = 0.67eV). This opens the possibility of bandgap, strain, and dopant diffusion engineering, all of which affect the material and electronic properties of devices. The primary benefit of carbon is to reduce the diffusion of boron in Si1-xGex thus keeping the base narrow for significantly reduced electron transit times and increased unity gain cutoff frequencies (fT). However the utilization of carbon reduces base conductivity and

  17. Correlation between texture and mechanical stress durability of thin aluminum films

    Energy Technology Data Exchange (ETDEWEB)

    Nüssl, R., E-mail: rudolf.nuessl@uct.ac.za [Institut für Physik, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85579 Neubiberg (Germany); Jewula, T.; Ruile, W. [TDK Corporation, Systems, Acoustics, Waves Business Group, Anzingerstraße 13, 81617 Munich (Germany); Sulima, T.; Hansch, W. [Institut für Physik, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85579 Neubiberg (Germany)

    2014-04-01

    In this article, differently textured aluminum (Al) metallizations of surface acoustic wave (SAW) devices have been exposed to cyclic mechanical stress in order to investigate a potential correlation between their texture and their mechanical stress durability. Samples of SAW devices with differently textured Al thin film electrodes have been manufactured, and texture measurements have been carried out on all samples with electron backscatter diffraction. Subsequently, the SAW devices have been operated at heavy electrical load until a defined mechanical fatigue of its Al electrodes occurred. SAW devices with highly textured Al electrodes showed almost 20 times higher power durability than SAW devices with untextured Al electrodes. We show that this increase in electrical power durability has to be fully attributed to the strongly enhanced mechanical stress durability of highly textured Al films. Furthermore, a positive correlation between the Al films' texture and its electrical conductivity has been found. - Highlights: • We show highly textured growth of thin Al films on a clean, monocrystalline LiTaO{sub 3} • Highly textured Al growth gets disturbed by prior photolithographic process steps • Power durability of a SAW device increases with texture of its metallization • Texture and mechanical stress durability of a thin Al film are tightly correlated.

  18. The MAJORANA DEMONSTRATOR: An R&D project towards a tonne-scale germanium neutrinoless double-beta decay search

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E; Amman, M; Amsbaugh, John F; Avignone, F. T.; Back, Henning O; Barabash, A; Barbeau, Phil; Beene, Jim; Bergevin, M; Bertrand, F; Boswell, M; Brudanin, V; Bugg, William; Burritt, Tom H; Chan, Yuen-Dat; Collar, J I; Cooper, R J; Creswick, R; Detwiler, Jason A; Doe, P J; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H; Elliott, Steven R; Ely, James H; Esterline, James H; Farach, H A; Fast, James E; Fields, N; Finnerty, P; Fujikawa, Brian; Fuller, Erin S; Gehman, Victor; Giovanetti, G K; Guiseppe, Vincente; Gusey, K; Hallin, A L; Hazama, R; Henning, Reyco; Hime, Andrew; Hoppe, Eric W; Hossbach, Todd W; Howe, M A; Johnson, R A; Keeter, K; Keillor, Martin E; Keller, C; Kephart, Jeremy D; Kidd, Mary; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Leviner, L; Loach, J C; Luke, P; MacMullin, S; Marino, Michael G; Mei, Dong-Ming; Miley, Harry S; Miller, M; Mizouni, Leila K; Montoya, A; Myers, A W; Nomachi, Masaharu; Odom, Brian; Orrell, John L; Phillips, D; Poon, Alan; Prior, Gersende; Qian, J; Radford, D C; Rielage, Keith; Robertson, R G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P; Schubert, Alexis G; Shima, T; Shirchenko, M; Strain, J; Thomas, K; Thompson, Robert C; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Vetter, Kai; Warner, Ray A; Wilkerson, J; Wouters, Jan; Yakushev, E; Young, A; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C L; Zimmerman, S

    2009-12-17

    The MAJORANA collaboration is pursuing the development of the so-called MAJORANA DEMONSTRATOR. The DEMONSTRATOR is intended to perform research and development towards a tonne-scale germanium-based experiment to search for the neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR can also perform a competitive direct dark matter search for light WIMPs in the 1-10GeV/c2 mass range. It will consist of approximately 60 kg. of germanium detectors in an ultra-low background shield located deep underground at the Sanford Underground Laboratory in Lead, SD. The DEMONSTRATOR will also perform background and technology studies, and half of the detector mass will be enriched germanium. This talk will review the motivation, design, technology and status of the Demonstrator.

  19. A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

    CERN Document Server

    Sukhdeo, David S; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

    2014-01-01

    Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to bia...

  20. The x-ray reflection efficiencies of planes (III) in germanium silicon and fluorite analyzing crystals. Experimental data

    Energy Technology Data Exchange (ETDEWEB)

    Bermudez Polonio, J.

    1964-07-01

    Integrated and peak reflection efficiency curves relative to a LiF crystal are presented. K{sub {alpha}} fluorescent radiations between (22) Ti and (41) Nb were used for both germanium and silicon crystals: the interval was extended to CaK{sub {alpha}} radiation in the short wavelength region with the fluorite crystal. Reflection efficiency curves show sharp declines in the region around the K absorption edges of germanium and calcium. For CuK{sub {alpha}} radiation, the experimental reflection efficiencies at the peak for germanium, silicon and fluorite crystals are 52, 38.5 and 17 percent, whereas the integrated reflection efficiencies are 65.5, 38 and 14 percent respectively. The data were obtained from untreated crystals, using a standard Norelco non-focussing X-ray spectrometer. Experimental procedures are presented. Some considerations about the (222) missing reflections are made. (Author) 12 refs.

  1. Measurement of the total neutron cross-section of germanium at energies below 2 eV

    Energy Technology Data Exchange (ETDEWEB)

    Salama, M.

    1983-01-01

    The total neutron cross-section of germanium has been measured at room temperature as a function of neutron energy in the range between 2.2 eV and 7 meV for randomly distributed crystals of germanium by transmission method using a chopper time-of-flight spectrometer at ET-RR-1 research reactor. The measured cross-section showed an evidence of 1/..nu.. thermal slope in the energy range 1.20 eV to 0.20 eV. Crystal structure effects were also observed. Calculations were performed giving values for the coherent scattering amplitude as well as the coherent scattering cross-section. The results obtained showed also the absence of scattering nuclear spin dependence in case of germanium.

  2. Nanoindentation of ultra-hard cBN films: A molecular dynamics study

    Science.gov (United States)

    Huang, Cheng; Peng, Xianghe; Fu, Tao; Zhao, Yinbo; Feng, Chao; Lin, Zijun; Li, Qibin

    2017-01-01

    Cubic Boron nitride (cBN) exhibits excellent mechanical properties including high strength, hardness and thermal resistance, etc. We optimized the parameters in the Tersoff interatomic potential for cBN based on its cohesive energy, lattice parameter, elastic constants, surface energy and stacking fault energy. We performed with molecular dynamics (MD) simulations the nanoindentation on the (001) and (111) surface of monocrystalline cBN thin films to study the deformation mechanisms and the effects of temperature and substrate orientation. It was found that during the indentation plastic deformation is mainly stress-induced slips of dislocations along {111} orientations. It was also found that the hardness of cBN depends strongly on temperature, and the capability of plastic deformation is enhanced with the increase of temperature.

  3. Electrodeposition of ZnO thin films on n-Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Dalchiele, E.A.; Giorgi, P.; Marotti, R.E. [Facultad de Ingenieria, Instituto de Fisica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Martin, F.; Ramos-Barrado, J.R.; Ayouci, R.; Leinen, D. [Laboratorio de Materiales y Superficie, Unidad asociada al CSIC, Departamento de Fisica Aplicada and Ingenieria Quimica, Facultad de Ciencias, Universidad de Malaga, 29071 Malaga (Spain)

    2001-12-31

    In this study, ZnO thin films have been deposited onto monocrystalline n-type Si(100) by electrodeposition at different applied potentials. XRD shows a preferential orientation (0002) that increases when the applied cathodic potential increases. The XPS analysis presents a Zn/O composition close to stoichiometric. SEM micrographs show a compact structure with localized platelets with a grain size of about 10{mu}m. However, crystallite size determined by the Scherrer method shows a size close to 2.50x10{sup -2}{mu}m, then the grains can be considered as clusters of crystallites. Optical measurements were made on samples deposited on ITO/glass through the same procedures giving a band gap of 3.3eV in agreement with the reported values for ZnO at room temperature.

  4. Biological insertion of nanostructured germanium and titanium oxides into diatom biosilica

    Science.gov (United States)

    Jeffryes, Clayton S.

    There is significant interest in titanium oxide and germanium-silicon oxide nanocomposites for optoelectronic, photocatalytic, and solar cell applications. The ability of the marine diatom Pinnularia sp. to uptake soluble metal oxides from cell culture medium, and incorporate them into the micro- and nano-structure of their amorphous silica cell walls, called frustules, was evaluated using an engineered photobioreactor system. The effects of metal oxides on the structural and elemental properties of the frustule were also evaluated. Diatom cell cultures grown in 5 L photobioreactors were initially charged with 0.5 mM of soluble silicon, Si(OH)4, an obligate substrate required for frustule fomation. Upon exhaustion of Si(OH)4 cells were exposed to the mixed pulse-addition of soluble silicon and germanium or co-perfusion addition of soluble silicon and titanium, which were incorporated into the frustules. Metals composition of the cell culture medium, diatom biomass and purified frustules were measured, as was the local elemental composition within the frustule pores and the metal oxide crystallinity. Diatom frustules having a germanium composition of 1.6 wt % were devoid of the native intra-pore structures and possessed enhanced photoluminescence and electroluminescence when compared to frustules without Ge. Diatoms cultivated in the presence of soluble titanium incorporated amorphous titania into the frustule, which maintained native structure even when local TiO2 concentrations within the nanopores approached 60 wt. %. Titanium oxide could also be biomimetically deposited directly within the diatom nanopores by adsorbing poly-L-lysine to the diatom biosilica where it catalyzed the soluble titanium precursor Ti-BALDH into amorphous titania nanoparticles. Both biogenic and biomimetic titania could be converted to anatase titanium by thermal annealing. It was determined that nanostructured metal oxide composites can be fabricated biomimetically or in cell culture to

  5. Evaluations of the commercial spectrometer systems for safeguards applications using the germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vo, D.T.

    1998-12-31

    Safeguards applications require the best spectrometer systems with excellent resolution, stability, and throughput. Instruments must perform well in all the situations and environments. Data communication to the computer should be convenient, fast, and reliable. The software should have all the necessary tools and be ease to use. Portable systems should be small in size, lightweight, and have a long battery life. Nine commercially available spectrometer systems are tested with both the planar and coaxial germanium detectors. Considering the performance of the Digital Signal Processors (DSP), digital-based spectroscopy may be the future of gamma-ray spectroscopy.

  6. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

    Science.gov (United States)

    Akca, Imran B.; Dâna, Aykutlu; Aydinli, Atilla; Turan, Rasit

    2008-02-01

    Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.

  7. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

    Science.gov (United States)

    Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-22

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  8. Optical and Structural Characterization of Pin Photodetector Based on Germanium Nanocrystals for Third Generation Solar Cells

    Directory of Open Access Journals (Sweden)

    K.K. Sossoe

    2016-11-01

    Full Text Available We investigated the structural and optoelectronic properties of p-n germanium nanocrystals based junctions embedded between GaAs substrate and layers of ZnO:Al or a-Si:H. Scanning electron microscopy and scanning tunneling microscopy were used on these junctions in this work. Calculations of tunneling current on the substrate showed effect of localized defects trapping Fermi level at the surface tending to make a semi-insulating substrate. The average value of the diameter of the Ge nanoparticle is around 12.5 nm. These results lay the foundation for the development of solar cells which active part is made of GeNCs.

  9. Electronic Structure of Single-Crystal Monolayer Graphene on Hydrogen-Terminated Germanium Surface

    Science.gov (United States)

    Ahn, Sung Joon; Lee, Jae-Hyun; Ahn, Joung Real; Whang, Dongmok

    2015-03-01

    Graphene, atomically flat 2-Dimensional layered nano material, has a lot of interesting characteristics from its unusual electronic structure. Almost properties of graphene are influenced by its crystallinity, therefore the uniform growth of single crystal graphene and layer control over the wafer scale areas remains a challenge in the fields of electronic, photonic and other devices based on graphene. Here, we report the method to make wafer scale single crystal monolayer graphene on hydrogen terminated germanium(110) surface and properties and electronic band structure of the graphene by using the tool of scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, electron transport measurement, electron diffraction and angle-resolved photoemission spectroscopy.

  10. Low-energy neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    A K Soma; L Singh; M K Singh; V Singh; H T Wong

    2012-11-01

    The TEXONO-CDEX Collaboration (Taiwan experiment on neutrino–China dark matter experiment) explores high-purity germanium (HPGe) detection technology to develop a sub-keV threshold detector for pursuing studies on low mass weakly interacting massive particles (WIMPs), properties of neutrino and the possibilities of neutrino-nucleus coherent scattering observation. This article will introduce the facilities of newly established China Jing-Ping Underground Laboratory (CJPL), preliminary result of cosmic ray background studies at CJPL, the dark matter studies pursued at Kuo-Sheng Neutrino Laboratory (KSNL) and research efforts to accomplish our physics goals.

  11. Effect of uniaxial stress on gallium, beryllium, and copper-doped germanium hole population inversion lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chamberlin, Danielle Russell [Univ. of California, Berkeley, CA (United States)

    1998-05-01

    The effects of stress on germanium lasers doped with single, double, and triple acceptors have been investigated. The results can be explained quantitatively with theoretical calculations and can be attributed to specific changes in the energy levels of acceptors in germanium under stress. In contrast to previous measurements, gallium-doped Ge crystals show a decrease in lasing upon uniaxial stress. The decrease seen here is attributed to the decrease in heavy hole effective mass upon application of uniaxial stress, which results in a decreased population inversion. The discrepancy between this work and previous studies can be explained with the low compensation level of the material used here. Because the amount of ionized impurity scattering in low-compensated germanium lasers is small to begin with, the reduction in scattering with uniaxial stress does not play a significant role in changing the laser operation. Beryllium-doped germanium lasers operate based on a different mechanism of population inversion. In this material it is proposed that holes can transfer between bands by giving their energy to a neutral beryllium atom, raising the hole from the ground to a bound excited state. The free hole will then return to zero energy with some probability of entering the other band. The minimum and maximum E/B ratios for lasing change with uniaxial stress because of the change in effective mass and bound excited state energy. These limits have been calculated for the case of 300 bar [100] stress, and match very well with the observed data. This adds further credence to the proposed mechanism for population inversion in this material. In contrast to Be and Ga-doped lasers, copper-doped lasers under uniaxial stress show an increase in the range of E and B where lasing is seen. To understand this change the theoretical limits for population inversion based on both the optical phonon mechanism and the neutral acceptor mechanism have been calculated. The data are

  12. Diffusion of E centers in germanium predicted using GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-08-17

    Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

  13. Luminescence decay dynamics of self-assembled germanium islands in silicon

    DEFF Research Database (Denmark)

    Julsgaard, Brian; Balling, Peter; Hansen, John Lundsgaard

    2011-01-01

    The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify...... a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures....

  14. Final Report for Monitoring of Reactor Antineutrinos with Compact Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Orrell, John L.; Collar, J. I.

    2009-07-01

    This 2008 NCMR project has pursued measurement of the antineutrino-nucleus coherent scattering interaction using a low-energy threshold germanium gamma-ray spectrometer of roughly one-half kilogram total mass. These efforts support development of a compact system for monitoring the antineutrino emission from nuclear reactor cores. Such a monitoring system is relevant to nuclear safeguards and nuclear non-proliferation in general by adding a strong method for assuring quantitative material balance of special nuclear material in the nuclear fuel cycle used in electricity generation.

  15. Results from a Low-Energy Analysis of the CDMS II Germanium Data

    CERN Document Server

    Ahmed, Z; Arrenberg, S; Bailey, C N; Balakishiyeva, D; Baudis, L; Bauer, D A; Brink, P L; Bruch, T; Bunker, R; Cabrera, B; Caldwell, D O; Cooley, J; Cushman, P; Daal, M; DeJongh, F; Dragowsky, M R; Duong, L; Fallows, S; Figueroa-Feliciano, E; Filippini, J; Fritts, M; Golwala, S R; Hall, J; Hennings-Yeomans, R; Hertel, S A; Holmgren, D; Hsu, L; Huber, M E; Kamaev, O; Kiveni, M; Kos, M; Leman, S W; Mahapatra, R; Mandic, V; McCarthy, K A; Mirabolfathi, N; Moore, D; Nelson, H; Ogburn, R W; Phipps, A; Pyle, M; Qiu, X; Ramberg, E; Rau, W; Reisetter, A; Saab, T; Sadoulet, B; Sander, J; Schnee, R W; Seitz, D N; Serfass, B; Sundqvist, K M; Tarka, M; Wikus, P; Yellin, S; Yoo, J; Young, B A; Zhang, J

    2010-01-01

    We report results from a reanalysis of data from the Cryogenic Dark Matter Search (CDMS II) experiment at the Soudan Underground Laboratory. Data taken between October 2006 and September 2008 using eight germanium detectors are reanalyzed with a lowered, 2 keV recoil-energy threshold, to give increased sensitivity to interactions from Weakly Interacting Massive Particles (WIMPs) with masses below ~10 GeV/c^2. This analysis provides stronger constraints than previous CDMS II results for WIMP masses below 9 GeV/c^2 and excludes parameter space associated with possible low-mass WIMP signals from the DAMA/LIBRA and CoGeNT experiments.

  16. Ultra-Low-Energy Germanium Detector for Neutrino-Nucleus Coherent Scattering and Dark Matter Searches

    CERN Document Server

    Wong, Henry T

    2008-01-01

    The status and plans of a research program on the development of ultra-low-energy germanium detectors with sub-keV sensitivities are reported. We survey the scientific goals which include the observation of neutrino-nucleus coherent scattering, the studies of neutrino magnetic moments, as well as the searches of WIMP dark matter. In particular, a threshold of 100-200 eV and a sub-keV background comparable to underground experiments were achieved with prototype detectors. New limits were set for WIMPs with mass between 3-6 GeV. The prospects of the realization of full-scale experiments are discussed.

  17. Aluminum, gallium, germanium, copper, and phosphorus complexes of meso-triaryltetrabenzocorrole.

    Science.gov (United States)

    Pomarico, Giuseppe; Nardis, Sara; Naitana, Mario L; Vicente, M Graça H; Kadish, Karl M; Chen, Ping; Prodi, Luca; Genovese, Damiano; Paolesse, Roberto

    2013-04-01

    5,10,15-Triaryltetrabenzocorrole complexes of aluminum, gallium, germanium, and phosphorus were synthesized by coordination of these metal ions in the preformed triaryltetrabenzocorrole macrocycle, opening a way to the investigation of different metal complexes. The UV-vis spectra of these derivatives exhibit a red shift and broadening of all absorption bands because of the π-extended aromatic system and distortion of the molecular framework. The electrochemical and photophysical behaviors of the free base and the metal complexes of meso-triaryltetrabenzocorrole were investigated and characterized.

  18. Germanium nanopyramid arrays showing near-100% absorption in the visible regime

    Institute of Scientific and Technical Information of China (English)

    Qi Han[1; Yongqi Fu[1; Lei Jin[1; Jingjing Zhao[2; Zongwei Xu[3; Fengzhou Fang[3; Jingsong Gao[2; Weixing Yu[4

    2015-01-01

    Solar energy is regarded as one of the most plentiful sources of renewable energy. An extraordinary light-harvesting property of a germanium periodic nanopyramid array is reported in this Letter. Both our theoretical and experimental results demonstrate that the nanopyramid array can achieve perfect broadband absorption from 500- to 800-nm wavelength. Especially in the visible regime, the experimentally measured absorption can even reach 100%. Further analyses reveal that the intrinsic antireflection effect and slow-light waveguide mode play an important role in the ultra-high absorption, which is helpful for the research and development of photovoltaic devices.

  19. Co-doping with antimony to control phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-02-15

    In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

  20. High-precision efficiency calibration of a high-purity co-axial germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Blank, B., E-mail: blank@cenbg.in2p3.fr [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Souin, J.; Ascher, P.; Audirac, L.; Canchel, G.; Gerbaux, M.; Grévy, S.; Giovinazzo, J.; Guérin, H.; Nieto, T. Kurtukian; Matea, I. [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Bouzomita, H.; Delahaye, P.; Grinyer, G.F.; Thomas, J.C. [Grand Accélérateur National d' Ions Lourds, CEA/DSM, CNRS/IN2P3, Bvd Henri Becquerel, BP 55027, F-14076 CAEN Cedex 5 (France)

    2015-03-11

    A high-purity co-axial germanium detector has been calibrated in efficiency to a precision of about 0.15% over a wide energy range. High-precision scans of the detector crystal and γ-ray source measurements have been compared to Monte-Carlo simulations to adjust the dimensions of a detector model. For this purpose, standard calibration sources and short-lived online sources have been used. The resulting efficiency calibration reaches the precision needed e.g. for branching ratio measurements of super-allowed β decays for tests of the weak-interaction standard model.

  1. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

    Science.gov (United States)

    Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-01

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  2. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu [ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Kamins, T. I. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Wu, X.; Lockwood, D. J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  3. A New Expression for the Full Energy Peak Efficiency of a High Pure Germanium Detector

    CERN Document Server

    Medhat, M E; Awaad, Z

    2001-01-01

    An empirical expression for the full energy photo-peak efficiency in terms of gamma-ray energy (E) and the vertical distance from the detector surface (d) (i.e. efficiency = function (d,E)) has been obtained for a high pure germanium detector (HPGe) using different standard sources. Comparison of the calculated efficiencies and the experimentally measured values for the energy range from 59.5-1332.2 keV and a source-to-detector distance of 5-30 cm showed that the theoretical values agree with the experiment.

  4. Synthesis and characterization of germanium monosulphide (GeS) single crystals grown using different transporting agents

    Indian Academy of Sciences (India)

    G K Solanki; Dipika B Patel; Sandip Unadkat; M K Agarwal

    2010-05-01

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

  5. Formation and thermodynamics of gaseous germanium and tin vanadates: a mass spectrometric and quantum chemical study.

    Science.gov (United States)

    Shugurov, S M; Panin, A I; Lopatin, S I; Emelyanova, K A

    2015-06-07

    The stabilities of gaseous germanium and tin vanadates were confirmed by high temperature mass spectrometry, and its structures were determined by quantum chemical calculations. A number of gas-phase reactions involving these gaseous salts were studied. On the basis of the equilibrium constants, the standard formation enthalpies of gaseous GeV2O6 (-1520 ± 42 kJ mol(-1)) and SnV2O6 (-1520 ± 43 kJ mol(-1)) were determined at a temperature of 298 K.

  6. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medewaldt, R.; Mikkelsen, U.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold.

  7. Laplace DLTS investigation of transition metal-hydrogen complexes in germanium

    Science.gov (United States)

    Gurimskaya, Y.; Mesli, A.

    2014-02-01

    High-resolution Laplace DLTS technique has been used to examine fine structures in the carrier emission processes hidden in the broad conventional DLTS peaks recorded in germanium samples, doped by several transition metals - Ni, Cr and Fe. These structures are found to be correlated with the acceptors, related to mentioned impurities, and also with possible presence of hydrogen-related defects. A link explaining interaction of transition metals with hydrogen due to the applied chemical treatment during sample preparation process is revealed and compared to what is known in silicon.

  8. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    Energy Technology Data Exchange (ETDEWEB)

    Koleśnik-Gray, Maria M.; Krstić, Vojislav, E-mail: vojislav.krstic@fau.de [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, College Green, Dublin 2 (Ireland); Sorger, Christian; Weber, Heiko B. [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Biswas, Subhajit; Holmes, Justin D. [Materials Chemistry and Analysis Group, Department of Chemistry, Tyndall Institute, University College Cork, Cork (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland)

    2015-06-08

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

  9. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    CERN Document Server

    Avignone, F T; Brodzinski, R; Collar, J I; Creswick, R J; Di Gregorio, D E; Farach, H A; Gattone, A O; Guérard, C K; Hasenbalg, F; Huck, H; Miley, H S; Morales, A; Morales, J; Nussinov, S; De Solorzano, A O; Reeves, J H; Villar, J; Zioutas, Konstantin

    1998-01-01

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector. This conversion is predicted when axions are incident at a Bragg angle with a crystalline plane. The analysis of approximately 1.94 kg.yr of data from the 1 kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound on axion-photon coupling of $g_{a\\gamma \\gamma} < 2.7\\cdot 10^{-9}$ GeV$^{-1}$, independent of axion mass up to ~ 1 keV.

  10. Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs.

    Science.gov (United States)

    Jannesari, R; Schatzl, M; Hackl, F; Glaser, M; Hingerl, K; Fromherz, T; Schäffler, F

    2014-10-20

    We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters for near-infrared light emission. Substrate pre-patterning defines preferential nucleation sites for the self-assembly of Ge QDs during epitaxial growth. Aligned two-dimensional photonic crystal slabs are then etched into the SOI layer. QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs. Rigorously coupled wave analysis shows that coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCS.

  11. Determination of Trace Germanium in Marine Sediments by Hydride Generation-Atomic Fluorescence Spectrometry (HG-AFS)

    Institute of Scientific and Technical Information of China (English)

    LI Jing; ZHAO Shilan; ZHANG Zhaohui; ZENG Xianjie

    2004-01-01

    A method for the analysis of trace germanium in marine sediments by HG-AFS has been investigated. The experimental conditions such as the acidity of reduction reaction, the amount of sodium boro-hydride, the carrier gas flow rate, etc., were tested and optimized by using a kind of orthogonal design. The detection limit of the presented method is 0.95 μg L-1 for germanium. The calibration curve shows a satisfactory line in the concentration range 0-320 μg L-1 Ge with a variation coefficient of ±2.1%.

  12. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Energy Technology Data Exchange (ETDEWEB)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Moeller, S.P.; Uggerhoej, E.; Worm, T.; Kononets, Y.V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S.H.; Sellschop, J.P.F.; Vilakazi, Z.Z.; Apyan, A.; Avakian, R.O.; Ispirian, K.A.; Taroian, S.P

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the <1 1 0> axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  13. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Kononets, Y. V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  14. Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati Roma (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

    2010-01-01

    In this manuscript, a 3-D axisymmetric model for the heteroepitaxial growth induced by irradiating thin patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers on Si (100) with pulsed UV-laser radiation, is presented. For reducing optimization steps, an efficient simulation of the laser induced processes that include rapid heating and solidification phenomena in the range of several tenth of nanoseconds, must be performed, if alloy composition and quality has to be adjusted. In this study, the effects of various laser energy densities on different amorphous Si/Ge bi-layer structures has been predicted and adjusted to obtain the desired Ge concentration profiles for applications as sacrificial layers, i.e. a Ge containing film buried under a Si rich surface layer. The numerical model includes the temperature dependent variations of the thermophysical properties and takes the coupled effects of temperature and hydrodynamic phenomena for a Boussinesq fluid, to estimate the element interdiffusion during the process and predicting the concentration profiles.

  15. The Effect of Graphene Oxide on Monocrystalline Silicon Texture in Hydrazine Hydrate%氧化石墨烯在水合肼中对单晶硅织构化的影响

    Institute of Scientific and Technical Information of China (English)

    张会丹; 裴重华

    2016-01-01

    单晶硅太阳能电池的表面反射率是影响其光电转换效率的重要因素之一,表面织构化对降低表面反射率有着重要作用。采用水合肼对单晶硅进行刻蚀,并采用不同氧化程度的氧化石墨烯作为碳催化剂对水合肼腐蚀体系进行催化,采用失重法、XRD、SEM 和 FTIR 测试手段对反应产物进行表征。结果表明:氧化石墨烯的加入对水合肼体系起到了促进催化的效果,质量浓度为1 mg/ mL 的氧化石墨烯促进效果最好,单晶硅表面金字塔形貌最佳;不同还原态的氧化石墨烯促进效果不同,还原时间最短时表面金字塔形貌最佳;随着还原程度的增加,促进作用越来越小,当还原时间为7 h 时,水合肼的各向异性消失,表现出各向同性的特性。%The surface reflectivity of monocrystalline silicon solar battery is one of the important factors of effect on photoelectric conversion efficiency. It is important for texturing monocrystalline to improve photo-electric conversion efficiency. We firstly adopt hydrazine hydrate as etching agent and graphene oxide with different oxidation degree were added into hydrazine hydrate to catalyze the corrosion. Products were char-acterized by XRD,SEM,FTIR and weight loss method. The results indicate that graphene oxide facili-tates the corrosion of monocrystalline silicon. And the optimal concentration is 1 mg / mL at that concentra-tion pyramid structures is fine. Moreover,the reduction time has an effect on the corrosion results. The less the reduction time is,the great effects of facilitating the corrosion is. When the reduction time is 7 h, the anisotropy disappears and turns into isotropy of hydrazine hydrate.

  16. Structural and magnetic properties of zinc ferrite thin films irradiated by 90 keV neon ions

    Energy Technology Data Exchange (ETDEWEB)

    Gafton, E.V., E-mail: elena.gafton@insp.jussieu.fr [Alexandru Ioan Cuza University, Faculty of Physics, 11 Carol I Blv., Iasi 700506 (Romania); Institut des NanoSciences de Paris, CNRS-UMR 7588, Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Bulai, G., E-mail: georgiana.bulai@yahoo.com [Alexandru Ioan Cuza University, Faculty of Physics, 11 Carol I Blv., Iasi 700506 (Romania); Caltun, O.F., E-mail: caltun@uaic.ro [Alexandru Ioan Cuza University, Faculty of Physics, 11 Carol I Blv., Iasi 700506 (Romania); Cervera, S., E-mail: sophie.cervera@insp.jussieu.fr [Institut des NanoSciences de Paris, CNRS-UMR 7588, Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Macé, S., E-mail: stephane.mace@insp.jussieu.fr [Institut des NanoSciences de Paris, CNRS-UMR 7588, Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Trassinelli, M., E-mail: martino.trassinelli@insp.jussieu.fr [Institut des NanoSciences de Paris, CNRS-UMR 7588, Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Steydli, S., E-mail: sebastien.steydli@insp.jussieu.fr [Institut des NanoSciences de Paris, CNRS-UMR 7588, Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France); Vernhet, D., E-mail: dominique.vernhet@insp.jussieu.fr [Institut des NanoSciences de Paris, CNRS-UMR 7588, Sorbonne Universités, UPMC Univ Paris 06, 75005 Paris (France)

    2016-08-30

    Highlights: • Effect of different ion beam fluences on zinc ferrite thin films structure was investigated. • First reported results on zinc ferrite thin films irradiated with slow highly charged ions. • Increased magnetization was observed for samples irradiated even at low fluence. • Measurements of blocking temperature of thin films before and after irradiation. - Abstract: The effects of 90 keV neon beam irradiation on the structure and magnetic properties of zinc ferrite thin films have been investigated through several methods, namely, X-ray diffraction technique, Vibrating Sample and SQUID magnetometers. Beforehand, the pristine have also been characterized using profilometry and microscopy techniques. In particular single-phase formation of the thin films deposited on monocrystalline Si (111) substrate by pulsed laser deposition technique was confirmed. Crystal lattice, coercivity, saturation magnetization have been studied for the first time, as a function of ion penetration depth and irradiation fluence. The chemical composition and the crystallinity of the films are not affected with the ion impact acting as a mechanical stress relief. On the contrary, both magnetization and coercivity are sensitive to Ne{sup q+} ion irradiation and exhibit different behaviours depending on the ion fluence range.

  17. Novel two-dimensional silicon and germanium allotropes: a first-principles study

    Science.gov (United States)

    Gimbert, Florian; Lee, Chi-Cheng; Friedlein, Rainer; Fleurence, Antoine; Yamada-Takamura, Yukiko; Ozaki, Taisuke

    2014-03-01

    Graphene has been extensively studied but its integration into Si-based device technologies is difficult. It has been recently predicted by first-principles calculations that freestanding silicene and germanene, the counterparts of graphene made of Si and Ge atoms respectively, have graphene-like electronic structure with a low buckled structure. So far, the models predicted by first-principles calculations were not able to describe completely the experimental results. These difficulties tend to suggest a more complex phase diagram for freestanding silicene or for silicene on a substrate than the simple buckled phase. We report for the first time a novel two-dimensional silicon and germanium allotropes, with a structure similar of that of MoS2 layer. After investigating a large range of lattice constants by first-principles calculations with OpenMX code, we show that this structure is the ground state for freestanding two-dimensional silicon and germanium layers instead of the usually considered low buckled silicene and germanene.

  18. A model for the effects of germanium on silica biomineralization in choanoflagellates

    Science.gov (United States)

    Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

  19. Efficient one-pot synthesis of monodisperse alkyl-terminated colloidal germanium nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Carolan, Darragh, E-mail: darragh.carolan@tyndall.ie; Doyle, Hugh, E-mail: hugh.doyle@tyndall.ie [University College Cork, Tyndall National Institute (Ireland)

    2014-12-15

    An efficient one-pot method for fabricating alkyl-capped germanium nanocrystals (Ge NCs) is reported. Ge NCs with a size of 3.9 ± 0.5 nm, are formed by co-reduction of germanium tetrachloride in the presence of n-butyltrichlorogermane, producing NCs with butyl-terminated surfaces. The advantage of this method is that it allows rapid synthesis and functionalisation of NCs with minimal post-synthetic purification requirements. TEM imaging showed that the Ge NCs are monodisperse and highly crystalline, while EDX and SAED confirmed the chemical identity and crystal phase of the NCs. FTIR and XPS confirmed that the Ge NCs were well passivated, with some oxidation of the nanocrystal surface. Optical spectroscopy of the NCs showed a strong absorbance in the UV region and an excitation wavelength dependent photoluminescence in the UV/violet. Time resolved photoluminescence measurements showed the presence of two nanosecond lifetime components, consistent with recombination of photogenerated excitons at low lying energy states present at the nanocrystal surface. Photoluminescence quantum yields were determined to be 37 %, one of the highest values reported for organically terminated Ge NCs.

  20. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Burks, M

    2008-11-12

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.