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Sample records for monocrystalline gan epitaxial

  1. Epitaxial growth of aligned GaN nanowires and nanobridges

    OpenAIRE

    2007-01-01

    Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈100〉 direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowir...

  2. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  3. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

    KAUST Repository

    Wang, Ping

    2017-01-18

    Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

  4. Gas source molecular beam epitaxial growth of GaN

    Science.gov (United States)

    Brown, Duncan W.

    1992-11-01

    Aluminum gallium nitride (AlGaN) has long been recognized as a promising radiation hard optoelectronic material. AlGaN has a wide direct band gap and therefore has potential applications in the fabrication of short wave-length devices, e.g., detectors and light-emitting diodes in the visible to ultraviolet region. Additionally, its piezoelectric properties and high acoustic velocities make it attractive for acoustic devices. The technical objective in Phase 1 was to determine if low temperature sources based on covalently bonded Group 3-nitrogen compounds could be used to prepare AlGaN films by gas source molecular beam epitaxy. The program required to investigate low temperature AlGaN source materials was separated into two parts: (1) the synthesis, purification, and pyrolysis of gallium-nitrogen adducts and aluminum-nitrogen adducts; and (2) the growth of GaN by chemical beam epitaxy. We clearly demonstrated under CBE conditions GaN(x)C(y) films could be grown using compounds with pre-existing Ga-N bonds whereas no films were formed using trimethylgallium. Dimethylgallium amide was shown to produce dramatically lower carbon content films in the presence of ammonia than did trimethylgallium in the presence of ammonia.

  5. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    Science.gov (United States)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (000_1) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  6. Development of Epitaxial GaN Films for RF Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

  7. The influence of Fe doping on the surface topography of GaN epitaxial material

    Science.gov (United States)

    Lei, Cui; Haibo, Yin; Lijuan, Jiang; Quan, Wang; Chun, Feng; Hongling, Xiao; Cuimei, Wang; Jiamin, Gong; Bo, Zhang; Baiquan, Li; Xiaoliang, Wang; Zhanguo, Wang

    2015-10-01

    Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 1019 cm-3. High resistivity GaN epitaxial material which is 1 × 109 Ω·cm is achieved. Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No. YYY-0701-02), the National Natural Science Foundation of China (Nos. 61204017, 61334002), the State Key Development Program for Basic Research of China, and the National Science and Technology Major Project.

  8. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  9. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kushvaha, S. S., E-mail: kushvahas@nplindia.org; Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D. [CSIR- National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi, India 110012 (India)

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  10. Synchrotron X-ray diffraction analysis of epitaxial GaN layer laterally overgrown

    CERN Document Server

    Feng Gan; Wang Yu Tian; Yang Hui; Liang Jun Wu; Zheng Wen Li; Jia Quan Jie

    2002-01-01

    The GaN layer grown by epitaxial lateral overgrowth on sapphire (0001) has been investigated by synchrotron X-ray diffraction. The results show that ELO GaN stripes bend towards the SiN sub x mask in directions perpendicular to the stripe direction. This lead to the GaN (0001) crystal planes in the 'wings' (overgrown GaN) exhibit crystallographic tilts away from those in the 'window' (seed) regions. The GaN (0002) diffraction was used to determine the grain sizes in the wing region and window region, respectively. It is found that the grain size in the wing region increases about three times comparing to those in window region

  11. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

    Science.gov (United States)

    Zhong, Aihua; Hane, Kazuhiro

    2012-12-27

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.

  12. Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.

    2017-04-01

    Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

  13. Preparation of Porous GaN Buffer and Its Influence on the Residual Stress of GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The preparation of porous structure on the molecular beam epitaxy (MBE)-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence (PL) spectrum.Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy (HVPE) epilayer growth.

  14. Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology

    Science.gov (United States)

    Zhang, Heng; Zhang, Xiong; Wang, Shuchang; Wang, Xiaolei; Zhao, Jianguo; Wu, Zili; Dai, Qian; Yang, Hongquan; Cui, Yiping

    2017-01-01

    A reformed flow-rate-modulation technology was developed for the metalorganic vapor phase epitaxy (MOVPE) growth of the N-polar GaN epitaxial layers. To improve the crystalline quality of the N-polar GaN epitaxial layers, a GaN nucleation layer was grown at relatively low temperature with carefully-controlled pulsed supply of Ga source and showed diverse morphology with atomic force microscope (AFM). Furthermore, the electrical and optical properties of the grown N-polar GaN epitaxial layers were investigated extensively by means of Hall effect, photoluminescence (PL), and X-ray rocking curve (XRC) measurements. The characterization results revealed that as compared with the N-polar GaN epitaxial layer grown over the conventional GaN nucleation layer which was deposited with continuous supply of both N and Ga sources, the electrical and optical properties of the N-polar GaN epitaxial layer grown with optimized supply of Ga source for the GaN nucleation layer were significantly improved.

  15. Anelasticity of GaN Epitaxial Layer in GaN LED

    Science.gov (United States)

    Chung, C. C.; Yang, C. T.; Liu, C. Y.

    2016-10-01

    In this work, the anelasticity of the GaN layer in the GaN light-emitting-diode device was studied. The present results show that the forward-voltage of GaN LED increases with time, as the GaN light-emitting-diode was maintained at a constant temperature of 100 °C. We found that the increase of the forward-voltage with time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaN LED device). And, the delay-response of the internal electrical fields with time is caused by the anelasticity (time-dependent strain) of the GaN layer. Therefore, using the correlation of strain-piezoelectric-forward voltage, a plot of thermal strain of the GaN layer against time can be obtained by measuring the forward-voltage of the studied GaN LED against time. With the curves of the thermal strain of GaN epi-layers versus time, the anelasticity of the GaN compound can be studied. The key anelasticity parameter, characteristic relaxation time, of the GaN is defined to be 2623.76 min in this work.

  16. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  17. Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy

    Science.gov (United States)

    Akasaka, Tetsuya; Kobayashi, Yasuyuki; Kasu, Makoto

    2009-09-01

    Selective-area metalorganic vapor phase epitaxy of GaN has been investigated using the optimized growth conditions for the layer (Frank-van der Merwe) growth and GaN-template substrates with low dislocation density. The surface of a GaN hexagon with 16-µm diameter has a single wide terrace over almost the whole area (step-free surface), when there are no screw-type dislocations in the finite area. Step-free GaN hexagons grew in the two-dimensional nucleus growth mode and had approximately an eight times lower growth rate than that of a GaN film grown in the step-flow mode under the growth conditions used in this study.

  18. N-polar GaN epitaxy and high electron mobility transistors

    Science.gov (United States)

    Hoi Wong, Man; Keller, Stacia; Nidhi; Dasgupta, Sansaptak; Denninghoff, Daniel J.; Kolluri, Seshadri; Brown, David F.; Lu, Jing; Fichtenbaum, Nicholas A.; Ahmadi, Elaheh; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

    2013-07-01

    This paper reviews the progress of N-polar (000\\mathop 1\\limits^\\_) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.

  19. Morphological characterization of selectively overgrown GaN via lateral epitaxy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    @@ Introduction GaN has attracted a lot of research attention because it has lower Ohmic contact resistance, large electron saturation velocity and a large breakdown field, combined with excellent thermal conductivity and stability, making it an excellent material for high-temperature, high-power and high-brightness optoelectronic devices such as field effect transistors (FET), junction (FET), bipolar transistors and photodiodes[1]. Since threading dislocations resulting from large lattice mismatach and the difference between thermal expansion coefficients of epitaxial GaN and substrate severely degrade the optical and electric qualities of the GaN layer, high quality GaN is indeed required for manufacture of high performance optical device[2]. Characterization of the microstructures of selectively lateral overgrowth of epitaxial GaN using SEM is presented in this work with focus on fully understanding evolution of the morphology and dislocation distribution that occurs in the different growth situations in order for establishment of procession-microstructure-properties interrelations.

  20. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.

    Science.gov (United States)

    Yu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi

    2014-01-01

    In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.

  1. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Yu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi

    2014-12-01

    In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.

  2. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy

    Science.gov (United States)

    Mozharov, A. M.; Komissarenko, F. E.; Vasiliev, A. A.; Bolshakov, A. D.; Moiseev, E. I.; Mukhin, M. S.; Cirlin, G. E.; Mukhin, I. S.

    2016-08-01

    Electrical properties of single GaN nanowires grown by means of molecular beam epitaxy with N-plasma source were studied. Ohmic contacts connected to single n-type GaN wires were produced by the combination of electron beam lithography, metal vacuum evaporation and rapid thermal annealing technique. The optimal annealing temperature to produce ohmic contacts implemented in the form of Ti/Al/Ti/Au stack has been determined. By means of 2-terminal measurement wiring diagram the conductivity of single NW has been obtained for NWs with different growth parameters. The method of MESFET measurement circuit layout of single GaN nanowires (NWs) has been developed. In accordance with performed numerical calculation, free carriers' concentration and mobility of single NWs could be independently estimated using MESFET structure.

  3. Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    Dasgupta, Sansaptak; Nidhi; Wu, Feng; Speck, James S.; Mishra, Umesh K.

    2012-11-01

    Smooth N-polar GaN films were epitaxially grown by plasma assisted molecular beam epitaxy (PAMBE) on on-axis p-Si(111). The structural quality of the as-grown GaN films was further improved by insertion of AlGaN/GaN superlattice structures, resulting in reduced threading dislocation density and also efficient stress management in the GaN film to mitigate crack formation. The structural quality of these films was comparable to N-polar GaN grown on C-SiC by MBE. Convergent beam electron diffraction (CBED) imaging and KOH etch studies were performed to confirm the N-polarity of the sample. Room temperature photoluminescence measurements revealed strong GaN band-edge emission.

  4. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  5. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    Science.gov (United States)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-22

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  6. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McSkimming, Brian M., E-mail: mcskimming@engineering.ucsb.edu; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Chaix, Catherine [RIBER S.A., 3a Rue Casimir Périer, BP 70083, 95873 Bezons Cedex (France)

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  7. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Brown, April [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 C. The thermal roughening of the GaN template caused by decomposition of the surface is investigated through the temporal variation of the GaN pseudodielectric function over the temperature range of 650 C to 850 C. The structural, morphological, and optical properties are also discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Study of the defects in GaN epitaxial films grown on sapphire by HVPE

    Science.gov (United States)

    Liu, Zhanhui; Xiu, Xiangqian; Chen, Lin; Zhang, Rong; Xie, Zili; Han, Ping; Shi, Yi; Gu, Shulin; Zheng, Youdou

    2008-02-01

    In this paper, the defects in hexagonal GaN epitaxial layers grown on (0001) sapphire (Al IIO 3) substrates by HVPE with a horizontal tube reactor had been studied. The GaN epitaxial layers were etched by means of defect-selective etching (Orthodox etching in molten KOH). The samples were characterized by Scanning Electron Microscopy (SEM) and Cathodoluminescence spectra (CL). From surface morphology and cross-sectional images, the defects could be divided into various types: cracks, low angle grain boundary (LAGB), nano-pipes and dislocations. These different defects were discussed. The cracks were proposed as related to the strain. And the strain could not only come from the lattice mismatch and thermal mismatch between sapphire and GaN layer in their interface, but also from the HVPE growth process. It was found that these screw, mixed and edge type dislocations formed small hexagonal pits after etching. Some pits would be observed in the area near LAGB. Additionally, by CL mapping technique, some non-radiative recombination centers without surface terminations could be probed optically.

  9. Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask

    Science.gov (United States)

    Xu, Yu; Cao, Bing; He, Shunyu; Qi, Lin; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng; Wang, Chinhua; Xu, Ke

    2017-09-01

    Growth of high-quality GaN within a limited thickness is still a challenge, which is important both in improving device performance and in reducing the cost. In this work, a self-organized graphene is investigated as a nano-mask for two-step GaN epitaxial lateral overgrowth (2S-ELOG) in hydride vapor phase epitaxy. Efficient improvement of crystal quality was revealed by x-ray diffraction. The microstructural properties, especially the evolution of threading dislocations (TDs), were investigated by scanning electron microscopy and transmission electron microscopy. Stacking faults blocked the propagation of TDs, and fewer new TDs were subsequently generated by the coalescence of different orientational domains and lateral-overgrown GaN. This evolution mechanism of TDs was different from that of traditional ELOG technology or one-step ELOG (1S-ELOG) technology using a two-dimensional (2D) material as a mask.

  10. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    OpenAIRE

    Wang Yongjin; Hu Fangren; Hane Kazuhiro

    2011-01-01

    Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place wit...

  11. Faceting control in core-shell GaN micropillars using selective epitaxy

    Directory of Open Access Journals (Sweden)

    Sergiy Krylyuk

    2014-10-01

    Full Text Available We report on the fabrication of large-area, vertically aligned GaN epitaxial core-shell micropillar arrays. The two-step process consists of inductively coupled plasma (ICP etching of lithographically patterned GaN-on-Si substrate to produce an array of micropillars followed by selective growth of GaN shells over these pillars using Hydride Vapor Phase Epitaxy (HVPE. The most significant aspect of the study is the demonstration of the sidewall facet control in the shells, ranging from {1 1 ̄ 01} semi-polar to {1 1 ̄ 00} non-polar planes, by employing a post-ICP chemical etch and by tuning the HVPE growth temperature. Room-temperature photoluminescence, cathodoluminescence, and Raman scattering measurements reveal substantial reduction of parasitic yellow luminescence as well as strain-relaxation in the core-shell structures. In addition, X-ray diffraction indicates improved crystal quality after the shell formation. This study demonstrates the feasibility of selective epitaxy on micro-/nano- engineered templates for realizing high-quality GaN-on-Si devices.

  12. Crystal Tilts in Epitaxially Laterally Overgrown GaN Films Determined by Four-Circle X-Ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    汪峰; 张荣; 陈志忠; 吴小山; 顾书林; 沈波; 郑有堃; 蒋树声

    2001-01-01

    Crystal tilts in epitaxially laterally overgrown (ELO) GaN films via hydride vapour phase epitaxy (HVPE) onsapphire substrates have been investigated by using the four-circle x-ray diffraction method. Three diffractionpeaks corresponding to the (0002) reflection of vertically epitaxial and tilted GaN domains are observable in thex-ray rocking curve. The angle separations △ω between the main peak and two lobes change with the azimuthangle φ. The dependence of △ω on φ and the crystal tilt angle θ has been calculated based on the standardkinetic x-ray diffraction model. The crystal tilt angle of a typical HVPE ELO GaN sample has been determinedto be 2.379°.

  13. Investigation of InN layers grown by molecular beam epitaxy on GaN templates

    Energy Technology Data Exchange (ETDEWEB)

    Vilalta-Clemente, A.; Mutta, G.R.; Chauvat, M.P.; Morales, M.; Doualan, J.L.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, Caen (France); Grandal, J.; Sanchez-Garcia, M.A.; Calle, F. [ISOM y Department de Ingenieria Electronica, E.T.S.I. Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria (Spain); Valcheva, E.; Kirilov, K. [Faculty of Physics, Sofia University (Bulgaria)

    2010-05-15

    An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  14. Thermodynamic analysis of (0001) and (000\\bar{1}) GaN metalorganic vapor phase epitaxy

    Science.gov (United States)

    Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Valencia, Hubert; Shiraishi, Kenji; Kumagai, Yoshinao; Kakimoto, Koichi; Koukitu, Akinori

    2017-07-01

    We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy considering the (0001) and (000\\bar{1}) surface states. Surface reconstruction, which depends on growth conditions such as temperature and partial pressure, affects growth processes. To discuss the effects of surface states on growth processes, we investigated the driving force of precursor deposition to form the surface phase defined stoichiometrically. In both N2 and H2 carrier gas cases, we showed surface phase diagrams, calculated driving forces, and discussed the difference in growth orientation.

  15. Terahertz absorption in GaN epitaxial layers under lateral electric field

    Science.gov (United States)

    Balagula, R. M.; Vinnichenko, M. Ya; Melentev, G. A.; Moldavskaya, M. D.; Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Danilov, S. N.; Suihkonen, S.

    2016-08-01

    Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.

  16. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

    Science.gov (United States)

    Oshima, Yuichi; Eri, Takeshi; Shibata, Masatomo; Sunakawa, Haruo; Kobayashi, Kenji; Ichihashi, Toshinari; Usui, Akira

    2003-01-01

    We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE growth, the thick GaN layer was easily separated from the template by the assistance of many voids generated around the TiN film. As a result, a freestanding GaN wafer was obtained. The wafer obtained had a diameter of 45 mm, and a mirror-like surface. The-full-width-at-half-maximum (FWHM) of (0002) and (10\\bar{1}0) peaks in the X-ray rocking curve profile were 60 and 92 arcsec, respectively. The dislocation density was evaluated at 5× 106 cm-3 by etch pit density measurement.

  17. Thermodynamic theory of epitaxial alloys: first-principles mixed-basis cluster expansion of (In, Ga)N alloy film.

    Science.gov (United States)

    Liu, Jefferson Zhe; Zunger, Alex

    2009-07-22

    Epitaxial growth of semiconductor alloys onto a fixed substrate has become the method of choice to make high quality crystals. In the coherent epitaxial growth, the lattice mismatch between the alloy film and the substrate induces a particular form of strain, adding a strain energy term into the free energy of the alloy system. Such epitaxial strain energy can alter the thermodynamics of the alloy, leading to a different phase diagram and different atomic microstructures. In this paper, we present a general-purpose mixed-basis cluster expansion method to describe the thermodynamics of an epitaxial alloy, where the formation energy of a structure is expressed in terms of pair and many-body interactions. With a finite number of first-principles calculation inputs, our method can predict the energies of various atomic structures with an accuracy comparable to that of first-principles calculations themselves. Epitaxial (In, Ga)N zinc-blende alloy grown on GaN(001) substrate is taken as an example to demonstrate the details of the method. Two (210) superlattice structures, (InN)(2)/(GaN)(2) (at x = 0.50) and (InN)(4)/(GaN)(1) (at x = 0.80), are identified as the ground state structures, in contrast to the phase-separation behavior of the bulk alloy.

  18. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.C., E-mail: saicheonglee86@yahoo.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ng, S.S.; Hassan, H. Abu; Hassan, Z.; Zainal, N. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Novikov, S.V.; Foxon, C.T.; Kent, A.J. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-07-01

    Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. - Highlights: • First time experimental studies of IR optical phonons in bulk like, cubic GaN layer. • Detection of extra phonon modes of cubic GaN by polarized IR reflectance technique. • Revelation of IR multiphonon modes of cubic GaN by first derivative numerical method. • Observation of multiphonon modes requires very high angle of incidence. • Resonance splitting effect induced by third phonon mode is a qualitative indicator.

  19. Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth

    Energy Technology Data Exchange (ETDEWEB)

    Baca, Albert G.; Bartram, M.E.; Coltrin, M.E.; Crawford, M.H.; Han, J.; Missert, N.; Willan, C.C.

    1999-01-11

    Growth kinetics, mechanisms, and material quality in GaN epitaxial lateral over-growth (ELO) were examined using a single mask of systematically varied patterns. A 2-D gas phase reaction/diffusion model describes how transport of the Ga precursor to the growth surface enhances the lateral rate in the early stages of growth. In agreement with SEM studies of truncated growth runs, the model also predicts the dramatic decrease in the lateral rate that occurs as GaN over-growth reduces the exposed area of the mask. At the point of convergence, a step-flow coalescence mechanism is observed to fill in the area between lateral growth-fronts. This alternative growth mode in which a secondary growth of GaN is nucleated along a single convergence line, may be responsible for producing smooth films observed to have uniform cathodoluminescence (CL) when using 1{micro}m nucleation zones. Although emission is comprised of both UV ({approximately}365nm) and yellow ({approximately}550nm) components, the spectra suggest these films have reduced concentrations of threading dislocations normally associated with non-radiative recombination centers and defects known to accompany growth-front convergence lines.

  20. Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN

    NARCIS (Netherlands)

    Bohnen, T.

    2010-01-01

    Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III ni

  1. Metalorganic vapor phase epitaxy of GaN on LiGaO{sub 2} substrates using tertiarybutylhydrazine

    Energy Technology Data Exchange (ETDEWEB)

    Pohl, U.W. [Technische Univ. Berlin (Germany). Inst. fuer Festkoerperphysik; Knorr, K. [Korth Kristalle GmbH, Altholz (Germany); Blaesing, J. [Magdeburg Univ. (Germany). Inst. fuer Experimentelle Physik

    2001-03-16

    First results on the metalorganic vapor phase epitaxy of GaN on (001) LiGaO{sub 2} substrates using tertiarybutylhydrazine as nitrogen source are reported. Epilayers with optically smooth surfaces and hexagonal structure were grown at 700 C. Mosaicity with a significant tilt spread is found and attributed to substrate surface roughness. (orig.)

  2. Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3157 nm. Also, the in-plane strain is -1.003%, while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity and dislocation density of GaN, showing that the edge type dislocations are the overwhelming majority.

  3. Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process.

    Science.gov (United States)

    Zettler, J K; Corfdir, P; Geelhaar, L; Riechert, H; Brandt, O; Fernández-Garrido, S

    2015-11-06

    We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires (NWs) on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN NW ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN NWs at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.

  4. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    Science.gov (United States)

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  5. Molecular beam epitaxy of c-plane wurtzite GaN on nitridized a-plane {beta}-Ga{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Villora, Encarnacion G. E-mail: villora.garcia@nims.go.jp; Shimamura, Kiyoshi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Aoki, Kazuo [Koha Co., Ltd., 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022 (Japan); Kitamura, Kenji [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2006-04-03

    Epitaxial growth of GaN on {beta}-Ga{sub 2}O{sub 3} single crystal substrates by the molecular beam epitaxy technique is demonstrated for the first time. Standard and in-plane X-ray diffraction evidence the growth of c-plane wurtzite GaN on a-plane {beta}-Ga{sub 2}O{sub 3}, the epitaxial relationship being <0 1 0>{sub Ga{sub 2}}{sub O{sub 3}}-parallel <1 1 2-bar 0>{sub GaN} and <0 0 1>{sub Ga{sub 2}}{sub O{sub 3}}-parallel <1-bar 1 0 0>{sub GaN}. Epitaxial growth without any buffer layer is achieved after an effective surface nitridation under NH{sub 3} gas.

  6. Effects of hydrogen during molecular beam epitaxy of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Y.; Feenstra, R.M. [Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2005-05-01

    We study the effect of introducing hydrogen gas through the RF plasma source during plasma-assisted molecular beam epitaxy of GaN(0001). The well-known smooth-to-rough transition that occurs for this surface as a function of decreasing Ga flux in the absence of H is found to persist even with H present. But, the critical Ga flux for this transition is increased by the presence of H, and for sufficiently high H pressure a new 2 x 2 surface structure that is believed to be H-terminated is observed. Under Ga-rich conditions, the presence of hydrogen is found to induce step bunching on the surface, from which we argue that H selectively bonds to surface step and/or kink sites. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Surface supersaturation in flow-rate modulation epitaxy of GaN

    Science.gov (United States)

    Akasaka, Tetsuya; Lin, Chia-Hung; Yamamoto, Hideki; Kumakura, Kazuhide

    2017-06-01

    Hillocks on N-face GaN (000 1 bar) films are effectively eliminated by group-III-source flow-rate modulation epitaxy (FME), wherein the flow-rate of group-III sources are sequentially modulated under a constant supply of NH3. A hillock-free smooth surface obtained by group-III-source FME is attributed to the enhancement of step-flow growth. We found that a hillock originates from a micropipe and grows by spiral growth around the micropipe. The spiral growth rate rapidly decreases with decreasing the degree of surface supersaturation σ, while the step-flow growth rate decreases linearly. For group-III-source FME, wherein σ is lower than conventional continuous growth, the spiral growth rate could be lower than the step-flow growth one so that the formation of hillocks is suppressed.

  8. Enhanced UV detection by non-polar epitaxial GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bangalore (India); Roul, Basanta [Materials Research Centre, Indian Institute of Science, Bangalore (India); Central Research Laboratory, Bharat Electronics, Bangalore (India); Shetty, Arjun [Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore (India)

    2015-12-15

    Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time.

  9. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  10. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

    OpenAIRE

    Taliercio, Thierry; Gallart, Mathieu; Lefebvre, Pierre; Morel, Aurélien; Gil, Bernard; Allègre, Jacques; Grandjean, Nicolas; Massies, Jean; Grzegory, Izabella; Porowsky, Sylvester

    2001-01-01

    International audience; We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

  11. Nucleation phenomena during molecular beam epitaxy of GaN observed by line-of-sight quadrupole mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Koblmueller, G.; Averbeck, R.; Riechert, H. [Infineon Technologies AG, Corporate Research Photonics, Otto-Hahn-Ring 6, 81739 Munich (Germany); Pongratz, P. [Vienna University of Technology, Institute of Solid State Physics, Wiedner Hauptstrasse 8-10, 1040 Vienna (Austria)

    2002-12-16

    We investigate nucleation and growth phenomena during molecular beam epitaxy of GaN on sapphire, 6H-SiC and GaN templates using in situ line-of-sight quadrupole mass spectrometry. Moreover, this method allows the quantitative study of nucleation phenomena by monitoring desorption processes. Heteroepitaxial growth of GaN on sapphire and 6H-SiC faces a high energy barrier to nucleation giving rise to a substantial Ga desorption during the initial phase of nucleation. The amount of initial Ga desorption in heteroepitaxy is independent of the chosen substrate material and is as high as 8 {+-} 1.5 nm equivalent GaN thickness. Once critical-sized islands have nucleated they grow three-dimensional (3D) leading to a quadratic increase of the GaN coverage and finally to a steady growth rate after coalescence, as also determined by Rutherford backscattering and atomic force microscopy. In contrast, homoepitaxy on Ga- and N-face GaN templates is distinguished by immediate nucleation. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  12. Effect of thickness on the microstructure of GaN films on Al203 (0001) by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Liu Ying-Ying; Zhu Jun; Luo Wen-Bo; Hao Lan-Zhong; Zhang Ying; Li Yan-Rong

    2011-01-01

    Heteroepitaxia1l GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy.The growth processes are in-situ monitored by reflection high energy electron diffraction.It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness.This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns.Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm.The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode.The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes.The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.

  13. GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering

    Institute of Scientific and Technical Information of China (English)

    Zhong Fei; Li Xin-Hua; Qiu Kai; Yin Zhi-Jun; Ji Chang-Jian; Cao Xian-Cun; Han Qi-Feng; Chen Jia-Rong; Wang Yu-Qi

    2007-01-01

    GaN layers with different polarities have been prepared by radio-frequency molecular beam epitaxy (RF-MBE) and characterized by Raman scattering. Polarity control are realized by controlling Al/N flux ratio during high temperature AlN buffer growth. The Raman results illustrate that the N-polarity GaN films have frequency shifts at A1(LO) mode because of their high carrier density; the forbidden A1 (TO) mode occurs for mixed-polarity GaN films due to the destroyed translation symmetry by inversion domain boundaries (IDBS); Raman spectra for Ga-polarity GaN films show that they have neither frequency shifts mode nor forbidden mode. These results indicate that Ga-polarity GaN films have a better quality, and they are in good agreement with the results obtained from the room temperature Hall mobility. The best values of Ga-polarity GaN films are 1042 cm2/Vs with a carrier density of 1.0×1017 cm-3.

  14. Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

    Science.gov (United States)

    Fujikura, Hajime; Konno, Taichiro; Yoshida, Takehiro; Horikiri, Fumimasa

    2017-08-01

    Thick (20-30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm-3, with a maximum mobility of 1150 cm2·V-1·s-1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm-3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

  15. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  16. Characteristics of stimulated emission from optically pumped freestanding GaN grown by hydride vapor-phase epitaxy

    CERN Document Server

    Lee, M H; Kim, S T; Chung, S H; Moon, D C

    1999-01-01

    In this study, we observed optically pumped stimulated emission at room temperature in quasi-bulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire substrate. The stimulated emission from the surface and 1-mm-wide-cleaved cavity of the GaN was red-shifted compared to the spontaneous emission by increasing the optical pumping-power density, and the full width at half maximum (FWHM) of the peak decreased. The stimulated emission was demonstrated to have a highly TE-mode polarized nature, and the super-linear dependence of the integrated emission intensity on the excitation power indicated a threshold pump-power density of I sub t sub h = 2 MW/cm sup 2 for one set of stimulated emissions.

  17. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

    Science.gov (United States)

    Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

    2017-01-01

    GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

  18. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.

    Science.gov (United States)

    Poppitz, David; Lotnyk, Andriy; Gerlach, Jürgen W; Lenzner, Jörg; Grundmann, Marius; Rauschenbach, Bernd

    2015-06-01

    Ion-beam assisted molecular-beam epitaxy was used for direct growth of epitaxial GaN thin films on super-polished 6H-SiC(0001) substrates. The GaN films with different film thicknesses were studied using reflection high energy electron diffraction, X-ray diffraction, cathodoluminescence and primarily aberration-corrected scanning transmission electron microscopy techniques. Special attention was devoted to the microstructural characterization of GaN thin films and the GaN-SiC interface on the atomic scale. The results show a variety of defect types in the GaN thin films and at the GaN-SiC interface. A high crystalline quality of the produced hexagonal GaN thin films was demonstrated. The gained results are discussed.

  19. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, June Key, E-mail: junekey@jnu.ac.kr, E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok [Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Ryu, Sang-Wan [Department of Physics and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Jeong, Tak [Korea Photonics Technology Institute, Gwangju 500-460 (Korea, Republic of); Jung, Eunjin; Kim, Hyunsoo, E-mail: junekey@jnu.ac.kr, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  20. Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

    Science.gov (United States)

    Leclaire, P.; Frayssinet, E.; Morelle, C.; Cordier, Y.; Théron, D.; Faucher, M.

    2016-10-01

    We present the first results for microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results are used to assess the use of thin buffers for GaN MEMS fabrication. On a 700 nm thick AlGaN/GaN epilayer, a high tensile stress is observed to increase the resonant frequency. The electromechanical coupling efficiencies of integrated transducers are assessed and compared with previously obtained results on commercially available 2 µm thick epilayers used for power transistor applications. A 28 nm V-1 actuation efficiency is measured on the 700 nm thick structure which is slightly better than the one measured on the 2 µm buffer. The electrical response of a gateless detector designed as a piezoresistance is obtained and a gauge factor of 60 is estimated. These results show that material issues can be unlocked to exploit the potentialities of III-nitrides for NEMS applications.

  1. Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy

    Science.gov (United States)

    Sekiguchi, Hiroto; Sakai, Masaru; Kamada, Takuho; Tateishi, Hiroki; Syouji, Atsushi; Wakahara, Akihiro

    2016-10-01

    Mg codoping can improve the luminescence properties of Eu-doped GaN. However, the enhanced optical sites differ depending on the fabrication method. In this study, the optical sites in Eu- and Mg-codoped GaN [GaN:(Eu, Mg)] grown by NH3-source molecular beam epitaxy (MBE) were evaluated. The optical properties of an Eu-Mg-related site grown by NH3-MBE were highly stable against thermal annealing. Although the luminescence at sites A (622.3 and 633.8 nm) and B (621.9 and 622.8 nm) was dominant under indirect excitation of Eu ions through GaN, four different optical site groups in addition to sites A and B were observed under resonant excitation. These optical sites are inconsistent with the Eu-Mg-related sites reportedly observed in GaN:(Eu, Mg) fabricated by organometallic vapor phase epitaxy, indicating that the optical site constitution strongly depends on the growth method. Furthermore, site A, with a high cross section, contributed to as much as 22% of the total photoluminescence (PL) integrated intensity for GaN:(Eu, Mg) grown by NH3-MBE, which resulted in a high PL intensity.

  2. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

    Science.gov (United States)

    Borysiuk, J; Zytkiewicz, Z R; Sobanska, M; Wierzbicka, A; Klosek, K; Korona, K P; Perkowska, P S; Reszka, A

    2014-04-04

    The growth mode and structural and optical properties of novel type of inclined GaN nanowires (NWs) grown by plasma-assisted MBE on Si(001) substrate were investigated. We show that due to a specific nucleation mechanism the NWs grow epitaxially on the Si substrate without any Si(x)N(y) interlayer, first in the form of zinc-blende islands and then as double wurtzite GaN nanorods with Ga-polarity. X-ray measurements show that orientation of these nanowires is epitaxially linked to the symmetry of the substrate so that [0001] axis of w-GaN nanowire is directed along the [111]Si axis. This is different from commonly observed behavior of self-induced GaN NWs that are N-polar and grow perpendicularly to the surface of nitridized silicon substrate independently on its orientation. The inclined NWs exhibit bright luminescence of bulk donor-bound excitons (D(0)X) at 3.472 eV and exciton-related peak at 3.46 eV having a long lifetime (0.7 ns at 4 K) and observable up to 50 K.

  3. Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

    Science.gov (United States)

    Araki, Masahiro; Mochimizo, Noriaki; Hoshino, Katsuyuki; Tadatomo, Kazuyuki

    2007-02-01

    We have investigated the direct growth of nonpolar a-plane GaN layers on an r-plane sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A high-density nucleation of GaN islands was obtained on the r-plane sapphire substrate at the initial stage of the high-temperature growth without a buffer layer, which resulted in a two-dimensional (2D) growth mode. We studied the effects of V/III ratio growth conditions on the surface morphology and growth features of an a-plane GaN layer. The results showed that a high density of pits with an inverse-pyramidal shape were formed at a high V/III ratio, whereas a relatively low density of pits were formed at a low V/III ratio due to the increase in the rate of lateral growth along the c-axis direction. We successfully grew a-plane GaN layers with a flat and pit-free surface using the “two-step growth method”. The method consisted of growing a first layer at a high V/III ratio and growing a second layer at a low V/III ratio. We found that the first layer plays an important role in GaN layer growth. The formation of a void-free GaN layer with sidewall facets in the first step leads to a flat and pit-free layer grown at a high rate of lateral growth along the c-axis direction in the second step.

  4. Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Chierchia, Rosa

    2007-07-01

    This thesis treats strain and dislocations in MOVPE GaN layers. The mosaic structure of metalorganic vapour phase epitaxy (MOVPE)-grown GaN layers was studied in dependence on the grain diameter utilizing high-resolution XRD. Different models for the defect structure were analyzed, the edge type TD densities were calculated under the assumption that the dislocations are not randomly distributed but localized at the grain boundaries. Moreover, in situ measurements have shown that the layers are under tension in the c-plane when a nucleation layer is used. The second part of this thesis treats a particular approach to reduce dislocations in MOVPE GaN layers, i.e. maskless pendeo epitaxial growth of MOVPE GAN layers. FE simulations assuming the strain to be completely induced during cooling of the structures after growth agree only partly with experimental data. The strain state of single layers and stripes of GaN grown on SiC was studied to exploit the evolution of the strain in the different phases of the PE growth. The biaxial compressive stress, due to the lattice mismatch between the GaN layer and the AlN nucleation layer is plastically relieved before overgrowth. Temperature dependent measurements show a linear reduction of the wing tilt with increasing temperature varying from sample to sample. Bent TDs have been observed in TEM images of maskless PE samples. Stress induced from the mismatch between the AlN buffer layer and the GaN also contributes to the remaining part of the wing tilt not relieved thermally. It has to be noted that the rest tilt value varies from sample to sample at the growth temperature. In fact some of the data indicate that the wing tilt decreases with increasing V/III ratio. In the last Chapter the application of X-ray techniques for the analysis of strain and composition in layers of inhomogeneous composition is explored. In the first part of the Chapter the strain state and the Al content of AlGaN buffer layers grown directly on (0001

  5. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

    Directory of Open Access Journals (Sweden)

    Yang Tieying

    2011-01-01

    Full Text Available Abstract Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD and hydride vapor-phase epitaxy (HVPE in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD, micro-Raman spectra, and scanning electron microscopy (SEM. Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.

  6. Bending stability of GaN grown on a metallic flexible substrate by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Rodríguez, A. G.; Chávez-Veloz, S. G.; Compeán-García, V. D.; López-Luna, E.; Vidal, M. A.

    2017-08-01

    GaN thin films were grown on flexible metallic substrates by molecular beam epitaxy. MgO buffer layers were deposited by spin coating on Ni-Mo-Cr (Hastelloy C-276) alloy tapes that were used as substrates. The structural characterization of the GaN/MgO/hastelloy samples was performed by x-ray diffraction and Raman spectroscopy. The obtained nanometric films have the stable hexagonal phase (α-GaN) with an average crystallite size of 18 nm. The long and short range order of GaN decrease when the structure is bent. The most significant variations in the structural properties occur between 100 and 250 bending cycles.

  7. Surface Acoustic Wave Velocity and Electromechanical Coupling Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapour Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN Zhen; LI Hong-Lang; YAN Li; CHEN Xiao-Yang; LU Da-Cheng; WANG Xiao-Hui; LIU Xiang-Lin; HAN Pei-De; YUAN Hai-Rong; WANG Du; WANG Zhan-Guo; HE Shi-Tang

    2001-01-01

    High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.

  8. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  9. Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

    Science.gov (United States)

    Kaganer, Vladimir M; Fernández-Garrido, Sergio; Dogan, Pinar; Sabelfeld, Karl K; Brandt, Oliver

    2016-06-08

    We investigate the nucleation, growth, and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy combining the statistical analysis of scanning electron micrographs with Monte Carlo growth models. We find that (i) the nanowire density is limited by the shadowing of the substrate from the impinging fluxes by already existing nanowires, (ii) shortly after the nucleation stage, nanowire radial growth becomes negligible, and (iii) coalescence is caused by bundling of nanowires. The latter phenomenon is driven by the gain of surface energy at the expense of the elastic energy of bending and becomes energetically favorable once the nanowires exceed a certain critical length.

  10. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Cheze, C. [TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Hauswald, C.; Brandt, O. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Siekacz, M. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kucharski, R. [Ammono S.A., Czerwonego Krzyza 2/31, 00-377 Warsaw (Poland); Remmele, T.; Albrecht, M. [Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  11. Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers

    Science.gov (United States)

    Ohnishi, Kazuki; Kanoh, Masaya; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Mukai, Takashi; Matsuoka, Takashi

    2017-10-01

    Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO4 (SCAM) substrates, and their self-separation was achieved. The 320-µm-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. This separation phenomenon occurred because of both the c-plane cleavability of SCAM and the difference in the thermal-expansion coefficients between GaN and SCAM. The dark-spot densities for the GaN films on the SCAM substrates were approximately 30% lower than those on sapphire substrates. These results indicate that SCAM substrates are promising for fabricating a high-quality freestanding GaN wafer at a low cost.

  12. Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

    Science.gov (United States)

    Dixit, Ripudaman; Tyagi, Prashant; Kushvaha, Sunil Singh; Chockalingam, Sreekumar; Yadav, Brajesh Singh; Sharma, Nita Dilawar; Kumar, M. Senthil

    2017-04-01

    We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 °C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 °C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 °C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique.

  13. GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Tseng, H. Y.; Yang, W. C.; Lee, P. Y.; Lin, C. W.; Cheng, Kai-Yuan; Hsieh, K. C.; Cheng, K. Y.; Hsu, C.-H.

    2016-08-01

    GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

  14. Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Misra, M.; Shah, K.S. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Moustakas, T.D.; Vaudo, R.P.; Singh, R. [Boston Univ., MA (United States). Molecular Beam Epitaxy Lab.

    1995-08-01

    We report for the first time, fabrication of photoconducting UV detectors made from GaN films grown by molecular beam epitaxy. Semi-instilating GaN films were grown by the method of electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-MBE). Photoconductive devices with interdigitated electrodes were fabricated and their photoconducting properties were investigated. In this paper we report on the performance of the detectors in terms of UV responsivity, gain-quantum efficiency product, spectral response and response time. We have measured responsivity of 125A/W and gain-quantum efficiency product of 600 at 254nm and 25V. The response time was measured to be on the order of 20ns for our detectors, corresponding to a bandwidth of 25Mhz. The spectral response showed a sharp long-wavelength cutoff at 365nm, and remained constant in the 200nm to 365nm range. The response of the detectors to low-energy x-rays was measured and found to be linear for x-rays with energies ranging from 60kVp to 90kVp.

  15. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kolkovsky, Vl. [Technische Universität Dresden, 01062 Dresden (Germany); Zytkiewicz, Z. R.; Sobanska, M.; Klosek, K. [Institute of Physics Polish Academy of Sciences, al. Lotnikow 32-46, 02-668 Warsaw (Poland); Korona, K. P. [Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw (Poland)

    2015-12-14

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 10{sup 2} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ∼2 nm thick SiN{sub x} layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 10{sup 15 }cm{sup −3}. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiN{sub x} interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  16. Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

    Science.gov (United States)

    Barchuk, M.; Lukin, G.; Zimmermann, F.; Röder, C.; Motylenko, M.; Pätzold, O.; Heitmann, J.; Kortus, J.; Rafaja, D.

    2016-12-01

    High-temperature vapor phase epitaxy (HTVPE) is a physical vapor transport technology for a deposition of gallium nitride (GaN) layers. However, little is known about the influence of the deposition parameters on the microstructure of the layers. In order to fill this gap, the influence of the ammonia (NH3) flow applied during the HTVPE growth on the microstructure of the deposited GaN layers is investigated in this work. Although the HTVPE technology is intended to grow GaN layers on foreign substrates, the GaN layers under study were grown on GaN templates produced by metal organic vapor phase epitaxy in order to be able to separate the growth defects from the defects induced by the lattice misfit between the foreign substrate and the GaN layer. The microstructure of the layers is characterized by means of high-resolution x-ray diffraction (XRD), transmission electron microscopy and photoluminescence. In samples deposited at low ammonia flow, planar defects were detected, along which the nitrogen atoms are found to be substituted by impurity atoms. The interplay between these planar defects and the threading dislocations is discussed. A combination of XRD and micro-Raman spectroscopy reveals the presence of compressive residual stress in the samples.

  17. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  18. Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kravchuk, K. S. [Moscow State Institute of Steel and Alloys (Russian Federation); Mezhennyi, M. V. [Institute of Chemical Problems for Microelectronics (Russian Federation); Yugova, T. G., E-mail: p_Yugov@mail.ru [Institute of Rare Metals (Russian Federation)

    2012-03-15

    The change in the dislocation density on the surface of GaN epitaxial layers, which were grown by hydride vapor-phase epitaxy on sapphire substrates with c and r orientations, has been investigated by optical and atomic force microscopy (AFM). It is shown that the observed decrease in the density of threading dislocations with an increase in the layer thickness is related to the annihilation of mixed dislocations. The experimental and theoretical data on the change in the density of mixed dislocations with an increase in the epitaxial-layer thickness are in good correspondence.

  19. Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

    Institute of Scientific and Technical Information of China (English)

    LIN Guo-Qiang; ZENG Yi-Ping; WANG Xiao-Liang; LIU Hong-Xin

    2008-01-01

    Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy(GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm.

  20. Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001) 1 x 1 surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Orani, D.; Rubini, S.; Pelucchi, E.; Bonanni, B. [Laboratorio Nazionale TASC-INFM, Area di Ricerca, S.S. 14, Km. 163.5, 34012 Trieste (Italy); Piccin, M. [Laboratorio Nazionale TASC-INFM, Area di Ricerca, S.S. 14, Km. 163.5, 34012 Trieste (Italy); Also with Dipartimento di Fisica, Universita' di Trieste, 34127 Trieste (Italy); Franciosi, A. [Laboratorio Nazionale TASC-INFM, Area di Ricerca, S.S. 14, Km. 163.5, 34012 Trieste (Italy); Passaseo, A.; Cingolani, R. [INFM e Dipartimento di Scienza dei Materiali, Universita' di Lecce, Via per Arnesano, 73100 Lecce (Italy); Khan, A. [Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2005-04-01

    GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, Al/n-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61{+-}0.06 and 0.98{+-}0.06 eV, respectively, for the two types of epitaxial junctions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Skierbiszewski, C.; Siekacz, M.; Feduniewicz, A.; Pastuszka, B.; Grzegory, I.; Leszczynski, M.; Porowski, S. [High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw (Poland); Wasilewski, Z. [Institute for Microstructural Sciences, National Research Council, Ottawa (Canada)

    2004-01-01

    Influence of growth conditions in plasma assisted molecular beam epitaxy on quality of GaN layers and GaN/AlGaN heterojunctions is studied. The growth diagram for step-flow growth mode and different nitrogen flux is presented. The low defect density of bulk GaN substrates together with very low impurity background concentrations resulted in high electron mobility for GaN/AlGaN heterojunctions: 109,000 cm{sup 2}/Vs at 1.5 K, and 2500 cm{sup 2}/Vs at 295 K. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Strain-relaxation in NH{sub 3}-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, T.; Onuma, T.; Chichibu, S.F. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Kawaguchi 332-0012 (Japan); Sugawara, M.; Uchinuma, Y. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Kaeding, J.F.; Sharma, R. [Department of Materials Engineering, University of California, Santa Barbara, CA 93106 (United States); Nakamura, S. [NICP, ERATO, Japan Science and Technology Agency (JST), Kawaguchi 332-0012 (Japan); Department of Materials Engineering, University of California, Santa Barbara, CA 93106 (United States)

    2006-05-15

    Temporal evolution of surface morphology in AlN epilayers grown by NH{sub 3}-source molecular beam epitaxy on the GaN/(0001) Al{sub 2}O{sub 3} epitaxial templates was correlated with changes in the degree of the residual strain and the layer thickness. They began to crack for the thickness as thin as 10 nm. However, atomic-layer step-and-terrace surface structures were maintained for the thickness up to 32 nm. Tensile biaxial stress decreased with further increase in the thickness due to the lattice relaxation, which caused surface roughening. An 1580-nm-thick, nearly strain-compensated AlN epilayer, of which threading dislocation density was reduced down to 6 x 10{sup 9} cm{sup -2}, exhibited excitonic photoluminescence peaks at 6.002 and 6.023 eV at 9 K and a near-band-edge peak at 5.872 eV at 293 K. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2012-01-31

    LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

  4. Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

    Science.gov (United States)

    Kum, Hyun; Seong, Han-Kyu; Lim, Wantae; Chun, Daemyung; Kim, Young-Il; Park, Youngsoo; Yoo, Geonwook

    2017-01-01

    We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al2O3) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.

  5. Effect of N2 microplasma treatment on initial growth of GaN by metal-organic molecular beam epitaxy

    Science.gov (United States)

    Suzuki, Yohei; Kusakabe, Yasuhiro; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya; Shimizu, Kazuo

    2016-08-01

    N2 atmospheric microplasma was applied to improve the yields and reproducibility of the initial growth of GaN by metal-organic molecular beam epitaxy (MOMBE). The plasma treatment was found to be effective in cleaning the surface, and excellent flat growth was achieved even in the early stage of the growth. The effect of the air exposure after plasma treatment was also studied, and the yield of the growth was found to be largely decreased by the air exposure even after the treatment. Therefore, the oxidation of the substrate is one of main causes of the poor initial growth and the installation of the microplasma equipment in the MBE loading chamber is useful for suppressing the oxidation after the treatment. Atomic force microscopy (AFM) measurement shows that the microplasma treatment is also effective for undoing the surface double steps through etching, which is helpful for a very smooth layer-by-layer growth in the early stage of growth.

  6. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gacevic, Z.; Fernandez-Garrido, S.; Calleja, E. [ISOM, Universidad Politecnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Rebled, J. M.; Peiro, F. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Estrade, S. [LENS-MIND-IN2UB, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); TEM-MAT, CCiT-UB, Sole i Sabaris 1, 08028 Barcelona (Spain)

    2011-07-18

    We report on properties of high quality {approx}60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be {+-} 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

  7. Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.

    Science.gov (United States)

    Schuster, Fabian; Hetzl, Martin; Weiszer, Saskia; Garrido, Jose A; de la Mata, María; Magen, Cesar; Arbiol, Jordi; Stutzmann, Martin

    2015-03-11

    In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.

  8. Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Klosek, K.; Sobanska, M.; Tchutchulashvili, G.; Zytkiewicz, Z.R., E-mail: zytkie@ifpan.edu.pl; Teisseyre, H.; Klopotowski, L.

    2013-05-01

    A comprehensive analysis of operating parameters of Addon RF nitrogen plasma source was made in order to determine how a ratio of different active nitrogen species depends on operating parameters of the source such as supplied power and nitrogen flow. We show that output signal of the optical sensor that measures intensity of the light emitted by the plasma is a direct measure of the amount of active nitrogen available for growth. Results of optical emission spectroscopy and measurements of growth kinetics show that nitrogen excited metastable molecules are the species mainly contributing to the growth of GaN under Ga-rich conditions. A procedure is presented allowing to find an optimal conditions of the plasma cell for high-quality GaN growth. Under these conditions the nitrogen flux contains maximum amount of excited metastable molecules and minimal amount of ionic and atomic nitrogen species to minimize GaN lattice damage, even at high growth rates. - Highlights: ► Operating parameters of Addon radio-frequency nitrogen plasma source studied ► Their influence on molecular beam epitaxy (MBE) growth of GaN analyzed ► MBE growth rate of GaN well correlates with output of the plasma emission sensor. ► Optical emission spectroscopy measurements of the nitrogen plasma made ► Nitrogen excited molecules mainly contribute to plasma-assisted MBE growth of GaN.

  9. Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, Y.; Kimoto, T. [Department of Electronic Science and Engineering, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto, 615-8510 (Japan); Suda, J. [Department of Electronic Science and Engineering, Kyoto University Katsura Campus, Nishikyo-ku, Kyoto, 615-8510 (Japan); PRESTO, Japan Science and Technology Agency (JST) Kawaguchi, Saitama 332-0012 (Japan)

    2005-05-01

    Direct growth of GaN on misoriented 4H- and 6H-SiC (0001) Si-face substrates and electrical characteristics of n-GaN/p-SiC heterojunction mesa diodes are presented. GaN was grown by molecular-beam epitaxy (MBE) using elemental Ga and rf plasma-excited active nitrogen. SiC substrates misoriented 8 toward the [11-20] direction were used in this study. The surfaces of MBE-grown GaN layers have wavy features with peak-to-valley height of 30 nm. These features originated from the substrate misorientation. It was found that step bunching and large faceting along [01-10] and [10-10] directions occurred during the growth of GaN. Lowering the growth temperature suppresses large faceting, and results in reduction of the peak-to-valley height to 3 nm. However, the surface still has the same undulating features (on a smaller length scale). Mesa diodes were fabricated from the grown GaN layers. The correlation between the diode electrical characteristics and GaN growth conditions is discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

  11. In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of Ga2O3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    Ngo, Trong Si; Le, Duc Duy; Tran, Duy Khanh; Song, Jung-Hoon; Hong, Soon-Ku

    2017-06-01

    Plasma-assisted molecular beam epitaxy (PAMBE) was used to grow Ga2O3 films on oxidized GaN layers on nitrided sapphire substrates. The GaN layer was grown by PAMBE, and the in situ oxidation of the GaN layer was achieved through exposure to oxygen plasma, which resulted in the formation of monoclinic β-Ga2O3. Crystalline monoclinic β-Ga2O3 films were grown on the GaN layers, with and without oxidation. The orientation relationships were [11\\overline{2} 0] Al2O3//[1\\overline{1} 00] AlN//[1\\overline{1} 00] GaN//[102] β-Ga2O3 and [1\\overline{1} 00] Al2O3//[11\\overline{2} 0] AlN//[11\\overline{2} 0] GaN//[010] β-Ga2O3. The grown β-Ga2O3 films were not single-crystalline but showed rotational domains along the growth direction with three variations, which resulted in six-fold rotational symmetry instead of two-fold rotational symmetry. The surface roughness of the grown β-Ga2O3 film was closely reflected to that of as-grown GaN and oxidized GaN. By analyzing the x-ray omega rocking curves for the on-axis (\\overline{2} 01) and off-axis (002) reflections, it was concluded that rotational domains dominantly affected the crystal quality of the β-Ga2O3 films.

  12. Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

    Indian Academy of Sciences (India)

    Mahesh Kumar; T N Bhat; M K Rajpalke; B Roul; P Misra; L M Kukreja; Neeraj Sinha; A T Kalghatgi; S B Krupanidhi

    2010-06-01

    Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

  13. Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling

    Energy Technology Data Exchange (ETDEWEB)

    Storm, D. F.; Katzer, D. S.; Meyer, D. J.; Binari, S. C. [Electronics Science and Technology Division, Naval Research Laboratory, Code 6852, 4555 Overlook Avenue SW, Washington DC 20375 (United States)

    2012-07-01

    We have investigated the effect of gallium deposition and desorption cycles and ultrathin (15 A) AlN layers on the oxygen impurity concentrations in homoepitaxial N-polar GaN layers. Secondary ion mass spectroscopy (SIMS) indicates that three Ga deposition and desorption cycles reduce the total oxygen by 70%-80%, while ten cycles reduces the total oxygen by more than 90%. We present a model of surface segregation and incorporation which accurately captures the distribution of oxygen in these layers. By fitting the model to the SIMS data, we are able to determine the fraction of an oxygen layer adsorbed on a GaN surface which segregates upon initiation of epitaxial GaN growth. Under the conditions investigated, we find this fraction to be 80%.

  14. A new approach to grow C-doped GaN thick epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Gogova, D.; Siche, D.; Albrecht, M.; Irmscher, K.; Rost, H.J.; Fornari, R. [Leibniz Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin (Germany); Rudko, G.Yu. [V. Lashkarev Institute of Semiconductors Physics, 03028 Kiev (Ukraine)

    2011-07-15

    In this study we employ a new method for growth of carbon-doped wurtzite crystalline GaN (GaN:C) based on vapour phase transport of Ga by the pseudohalide hydrogen cyanide HCN. GaN:C layers with a thicknesses from 10 to 100 {mu}m and up to 19 mm in size were grown from gallium melt and ammonia as feeding materials in a carbon-containing equipment. The properties of the GaN:C layers were characterized by low-temperature photoluminescence (LTPL), High-Resolution X-ray Diffraction (HRXRD), Secondary Ion Mass Spectrometry (SIMS) and room-temperature Hall effect and Raman spectroscopy measurements. HRXRD studies demonstrated good crystalline quality of the thick GaN layers (the Rocking curve FWHMs are 570 arcsec for the (0004) reflection and 561 arcsec for the (10-14) reflection for 10 {mu}m thick samples). The LTPL and Raman spectroscopy confirmed the good optical and structural quality of the material. The carbon concentration measured by SIMS was 6x10{sup 18} cm{sup -3}, however, the room-temperature Hall effect experiments showed n-type conductivity. Carbon acceptor incorporation into GaN (from the transport agent) as well as the reason of its electrical overcompensation by unintentional impurities like oxygen and silicon is discussed. Ways of technological process improvement are proposed. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint

    Science.gov (United States)

    Gómez, V. J.; Gačević, Ž.; Soto-Rodríguez, P. E. D.; Aseev, P.; Nötzel, R.; Calleja, E.; Sánchez-García, M. A.

    2016-08-01

    This work presents a comparative study, based mainly on X-ray diffraction analysis, of compact (~100 nm thick) and uniform single crystal InGaN layers (In content <35%) grown by plasma-assisted molecular beam epitaxy. InGaN layers have been grown directly on Si(111) substrates and on commercially available GaN(0001)-on-sapphire templates.. A high reactivity of atomic N with Si leads to a formation of amorphous SiN on Si substrate, i.e. an indirect crystal-to-crystal InGaN/SiN/Si contact; the weak InGaN interaction with the underlying substrate (weak epitaxial constraint) further leads to poor surface "wetting" and consequent 3D nucleation. The InGaN growth on GaN is, on the other hand, characterized by a direct crystal-to-crystal InGaN/GaN contact; the strong InGaN interaction with the underlying substrate (strong epitaxial constraint) leads to good surface "wetting" and consequent 2D nucleation. All studied InGaN layers show single epitaxial relationship to both Si(111) and GaN(0001)-on-sapphire substrates as well as a relatively good compositional uniformity (no trace of InGaN phase separation). However, layers grown on Si show significantly lower strain and inferior crystallographic uniformity i.e. higher disorder in crystallographic tilt and twist. The surface "wetting" (poor vs. good) and epitaxial constraint (weak vs. strong) are suggested as the main origins of these discrepancies.

  16. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

    Science.gov (United States)

    Lee, Ho-Jun; Bae, Si-Young; Lekhal, Kaddour; Tamura, Akira; Suzuki, Takafumi; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2017-06-01

    We successfully grew semipolar (10 1 ̅ 3) and (10 1 ̅ 5) GaN films on Si(001) substrates employing metal-organic chemical vapor deposition (MOCVD) by inserting a directionally sputtered AlN (DS-AlN) buffer layer. To improve the crystal quality of the orientation-controlled semipolar (10 1 ̅ 3) and (10 1 ̅ 5) GaN films, a two-step epitaxial lateral overgrowth (ELO) process was performed with a striped mask. According to low-temperature cathodoluminescence (LT-CL) characterization, the ELO results in a coalesced morphology and a low defect density of <2.72×108 cm-2 for both semipolar (10 1 ̅ 3) and (10 1 ̅ 5) GaN films. For comparing the properties of planar and ELO semipolar GaN, a rocking curve of x-ray diffraction (XRD) and low-temperature photoluminescence (LT-PL) spectra was measured. The crystal orientation of semipolar GaN films was confirmed using electron backscatter diffraction (EBSD).

  17. Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy

    Science.gov (United States)

    Jeon, Injun; Lee, Ha Young; Noh, Ji-Yeon; Ahn, Hyung Soo; Yi, Sam Nyung; Jeon, Hunsoo; Shin, Min Jeong; Yu, Young Moon; Ha, Dong Han

    2016-09-01

    We report on crystallographic analyses of one-dimensional GaN nanoneedles grown on a n-GaN epilayer by using hydride vapor phase epitaxy. The nanoneedles were grown with a HCl:NH3 gas flow ratio of 1:38 at 600 °C. The growth time of the GaN nanoneedles affected their morphologies. As time progressed, GaN dots nucleated and then evolved as nanoneedles. The vertical growth rate of GaN nanoneedles was higher than the lateral growth rate under optimized growth conditions. X-ray pole figure measurements were carried out using a four-axis diffractometer. For the sample grown for 20 min, we obtained discrete patterns with six strong dots and weak dough-nut and cotton swab patterns, indicating that most of the nanoneedles were grown ideally, but partially, in the x- y plane with an azimuthal rotation angle ϕ = 15 ~ 45° rotated to the substrate, and a few GaN nanoneedles were tilted by ±4° or by more than 32° from the vertical c-axis.

  18. Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Low-pressure MOCVD has been used to investigate the properties of low-temperature buffer layer deposition conditions and their influence on the properties of high-temperature GaN epilayers grown subsequently. It is found that the surface morphology of the as-grown buffer layer after thermal annealing at 1030℃ and 1050℃ depends strongly on the thickness of the buffer layer. In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing.

  19. 用MOVPE方法外延生长Si掺杂的立方相GaN%Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    WU; Jun; ZHAO; F; H; Ito; Y; Yoshida; S; Onabe; K; Shiraki; Y

    2001-01-01

    用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN.在生长了一个20nm厚的缓冲层后,外延生长了1μm厚的立方GaN外延层.利用二次离子质谱测定了掺杂的程度.并用X射线衍射和光致发光测量来表征了未掺杂和Si掺杂GaN的结构和光学质量.%Si-doped and undoped cubic GaN were grown by low-pressure metalorganic vapor phase epitaxy using a two-step growth process. After the deposition of a 20nm-thick buffer layer, an about 1μm-thick Si-doped cubic GaN epitaxial layer was deposited. Doping level was determined by secondary ion mass spectroscopy measurements. X-ray diffraction and photoluminescence measurements were used to characterize the structural and optical quality of the undoped and the Si-doped cubic GaN.

  20. Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Hua; Zhong Fei; Qiu Kai; Yin Zhi-Jun; Ji Chang-Jian

    2008-01-01

    This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature (HT) AlN layer and a low-temperature (LT) AlN layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-AlN layer can result in the growth of GaN epilayer in Ga-polarity and the LT-AlN layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm2/V.s at room temperature when the thickness of LT-AlN layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilayers by the utilization of LT-AlN layer.

  1. Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Tessarek, C.; Bashouti, M.; Heilmann, M.; Dieker, C.; Knoke, I.; Spiecker, E.; Christiansen, S.

    2013-10-01

    A simple self-catalyzed and mask-free approach will be presented to grow GaN rods and nanorods based on the metal-organic vapor phase epitaxy technique. The growth parameter dependent adjustment of the morphology of the structures will be discussed. Rods and nanorods with diameters reaching from a few μm down to 100 nm, heights up to 48 μm, and densities up to 8ṡ107 cm-2 are all vertically aligned with respect to the sample surface and exhibiting a hexagonal shape with smooth sidewall facets. Optical properties of GaN nanorods were determined using cathodoluminescence. It will be shown that the optical properties can be improved just by reducing the Ga precursor flow. Furthermore, for regular hexagonal shaped rods and nanorods, whispering gallery modes with quality factors up to 500 were observed by cathodoluminescence pointing out high morphological quality of the structures. Structural investigations using transmission electron microscopy show that larger GaN nanorods (diameter > 500 nm) contain threading dislocations in the bottom part and vertical inversion domain boundaries, which separate a Ga-polar core from a N-polar shell. In contrast, small GaN nanorods (˜200 nm) are largely free of such extended defects. Finally, evidence for a self-catalyzed, Ga-induced vapor-liquid-solid growth will be discussed.

  2. Strain in epitaxial Bi{sub 2}Se{sub 3} grown on GaN and graphene substrates: A reflection high-energy electron diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bin; Guo, Xin; Ho, Wingkin; Xie, Maohai, E-mail: mhxie@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road (Hong Kong)

    2015-08-24

    Topological insulator (TI) has been one of the focus research themes in condensed matter physics in recent years. Due to the relatively large energy bandgap, Bi{sub 2}Se{sub 3} has been identified as one of the most promising three-dimensional TIs with application potentials. Epitaxial Bi{sub 2}Se{sub 3} by molecular-beam epitaxy has been reported by many groups using different substrates. A common feature is that Bi{sub 2}Se{sub 3} grows readily along the c-axis direction irrespective of the type and condition of the substrate. Because of the weak van der Waals interaction between Bi{sub 2}Se{sub 3} quintuple layers, the grown films are reported to be strain-free, taking the lattice constant of the bulk crystal. At the very initial stage of Bi{sub 2}Se{sub 3} deposition, however, strain may still exist depending on the substrate. Strain may bring some drastic effects to the properties of the TIs and so achieving strained TIs can be of great fundamental interests as well as practical relevance. In this work, we employ reflection high-energy electron diffraction to follow the lattice constant evolution of Bi{sub 2}Se{sub 3} during initial stage depositions on GaN and graphene, two very different substrates. We reveal that epitaxial Bi{sub 2}Se{sub 3} is tensile strained on GaN but strain-free on graphene. Strain relaxation on GaN is gradual.

  3. Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd₂O₃ and Y₂O₃ on GaN.

    Science.gov (United States)

    Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei

    2013-02-01

    High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and highly structural perfection. Structural investigation was carried out by in situ reflection high energy electron diffraction (RHEED) and ex-situ X-ray diffraction (XRD) with synchrotron radiation. In the initial stage of epitaxial growth, the R₂O₃ layers have a hexagonal phase with the epitaxial relationship of R₂O₃ (0001)(H)(H)//GaN(0001)(H)(H). With the increase in R₂O₃ film thickness, the structure of the R₂O₃ films changes from single domain hexagonal phase to monoclinic phase with six different rotational domains, following the R₂O₃ (201)(M)[020](M)//GaN(0001)(H)(H) orientational relationship. The structural details and fingerprints of hexagonal and monoclinic phase Gd₂O₃ films have also been examined by using electron energy loss spectroscopy (EELS). Approximate 3-4 nm is the critical thickness for the structural phase transition depending on the composing rare earth element.

  4. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

    Science.gov (United States)

    Krishna, Shibin; Aggarwal, Neha; Mishra, Monu; Maurya, K K; Singh, Sandeep; Dilawar, Nita; Nagarajan, Subramaniyam; Gupta, Govind

    2016-03-21

    The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.

  5. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

    Science.gov (United States)

    Uedono, Akira; Malinverni, Marco; Martin, Denis; Okumura, Hironori; Ishibashi, Shoji; Grandjean, Nicolas

    2016-06-01

    Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5-0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 1019 cm-3, vacancy-type defects were introduced starting at above [Mg] = 1 × 1020 cm-3. The major defect species was identified as a complex between Ga vacancy (VGa) and multiple nitrogen vacancies (VNs). The introduction of vacancy complexes was found to correlate with a decrease in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.

  6. Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy

    Science.gov (United States)

    Noh, Young Kyun; Lee, Sang Tae; Kim, Moon Deock; Oh, Jae Eung

    2017-02-01

    Iron doped GaN layers were grown on (110) Si substrates by ammonia molecular beam epitaxy (MBE) using solid elemental iron as a source. Specular films with concentrations up to 1×1020 cm-3, as determined by secondary ion mass spectroscopy, were grown, unlike a limited incorporation of Fe into GaN by metal-rich rf plasma MBE. The Fe concentration in the film showed an exponential dependence on the inverse of source temperature with an activation energy of 3.4 eV, which agrees well to the reported value for the sublimation of Fe. A 1.5 μm thick GaN film with a sheet resistance of 1 GΩ/sq. was obtained by compensating unintentional residual donors with a small Fe concentration of 1×1017 cm-3. X-ray diffraction rocking curves indicated high crystalline quality, very similar to an undoped film, showing that the Fe incorporation required to obtain the semi-insulating film properties did not affect the structural properties of the film. The low-temperature PL spectra of highly resistive and semi-insulating Fe:GaN in the range of 1017 1018 cm-3 show dominant exciton emissions and enhanced donor-acceptor-pair (DAP) emissions, implying that Fe ions contribute to the DAP transition between donor levels and Fe-related acceptor levels, possibly compensating the residual donors to achieve the semi-insulating electrical properties.

  7. Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers

    NARCIS (Netherlands)

    Kamler, G.; Borysiuk, J.; Weyher, J.L.; Czernecki, R.; Leszczynski, M.; Grzegory, I.; Porowski, S.

    2005-01-01

    Two different etching techniques were used for the investigation of polarity inversion in the magnesium-doped MOVPE GaN layers deposited on GaN pressure grown substrates. Etching in KOH solution at 100 degrees C and in molten bases at 450 degrees C allowed us to determine precisely the regions of di

  8. Effects of AlN buffer layers on the structural and the optical properties of GaN epilayers grown on Al{sub 2}O{sub 3} substrates by using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Heechang; Lee, Seungjoo; Kumar, Sunil; Kang, Taewon [Dongguk University, Seoul (Korea, Republic of); Lee, Namhyun; Kim, Taewhan [Hanyang University, Seoul (Korea, Republic of)

    2014-04-15

    GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by using plasma-assisted molecular-beam epitaxy. The GaN epilayer with an AlN buffer layer was much smaller than the GaN epilayer without an AlN buffer layer. The crystal quality of the GaN active layer was improved by utilizing an AlN layer, which acted as a nucleation layer. The reduced defect density promoted GaN coalition. The double-crystal rocking curves and the photoluminescence spectra showed that the GaN epilayer grown on a 4-nm AlN buffer layer had the best quality among the several kinds of samples. The photoluminescence intensity of the GaN epilayer which is related to the density of the crystal defects was lower when an AlN buffer layer was used the thin AlN nucleation layer protected against stain propagation. These results indicate that GaN epilayers grown on AIN buffer layers hold promise for applications in short-wavelength optoelectronic devices.

  9. Effect of Ⅲ/Ⅴ Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    ZHONG Fei; CHEN Jia-Rong; WANG Yu-Qi; QIU Kai; LI Xin-Hua; YIN Zhi-Jun; XIE Xin-Jian; WANG Yang; JI Chang-Jian; CAO Xian-Cun; HAN Qi-Feng

    2007-01-01

    @@ We investigate the effect of Al/N ratio of the high temperature (HT) AlN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AlN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process.Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.

  10. Growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Science.gov (United States)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Itoi, Takaomi; Wang, Ke; Imai, Daichi; Yoshikawa, Akihiko

    2016-04-01

    The growth kinetics and structural perfection of (InN)1/(GaN)1-20 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)1/(GaN)4 SPSs was around 10%, and the corresponding InN coverage in the ˜1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ˜1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  11. Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Hestroffer, Karine; Lund, Cory; Koksaldi, Onur; Li, Haoran; Schmidt, Gordon; Trippel, Max; Veit, Peter; Bertram, Frank; Lu, Ning; Wang, Qingxiao; Christen, Jürgen; Kim, Moon J.; Mishra, Umesh K.; Keller, Stacia

    2017-05-01

    This work reports on compositionally graded (0 0 0 1 bar) N-polar InxGa1-xN layers. The InGaN grades with different final In compositions xf up to 0.25 were grown by plasma-assisted molecular beam epitaxy on vicinal GaN base layers with a miscut angle of 4° towards the m-direction. When increasing xf the surface morphology evolved from an interlacing finger structure, attributed to the Ehrlich-Schwöbel effect, towards fully strain-relaxed columnar features. Regardless of the crystal morphology and the strain state each graded sample exhibited a bright photoluminescence signal at room temperature spanning the whole visible range. Cross-sectional nanoscale cathodoluminescence evidenced a red-shift of the luminesced signal from 420 to 580 nm along the grade and also showed strong lateral emission inhomogeneities.

  12. Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

    Science.gov (United States)

    Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi

    2012-08-01

    AlGaN/GaN structures were regrown on GaN templates using plasma- assisted molecular beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen plasma in the MBE chamber for different durations (0 min to 30 min). Direct-current measurements on high-electron-mobility transistor devices showed that good pinch-off characteristics and good interdevice isolation were achieved for samples prepared with a 30-min nitridation process. Current-voltage measurements on Schottky barrier diodes also revealed that, for samples prepared without nitridation, the reverse-bias gate leakage current was approximately two orders of magnitudes larger than that of samples prepared with a 30-min nitridation process. The improvement in the electrical properties is a result of contaminant removal at the regrowth interface which may be induced by the etching effect of nitridation.

  13. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    Science.gov (United States)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  14. Properties of Zincblende GaN and (In,Ga,Al)N Heterostructures grown by Molecular Beam Epitaxy

    OpenAIRE

    1999-01-01

    Während über hexagonales (alpha) GaN zum ersten Mal 1932 berichtet wurde, gelang erst 1989 die Synthese einer mit Molekularstrahlepitaxie (MBE) auf 3C-SiC epitaktisch gewachsenen, metastabilen kubischen (eta) GaN Schicht. Die vorliegende Arbeit befaßt sich mit der Herstellung der Verbindungen eta-(In,Ga,Al)N mittels RF-Plasma unterstützter MBE auf GaAs(001) und den mikrostrukturellen sowie optischen Eigenschaften dieses neuartigen Materialsystems. Im Vergleich zur hexagonalen bietet die kubis...

  15. Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kruse, J. E.; Doundoulakis, G. [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Lymperakis, L. [Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Eftychis, S.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. [Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece); Koukoula, T.; Kehagias, Th.; Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2016-06-14

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  16. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

    Science.gov (United States)

    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO2 mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  17. Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor

    Science.gov (United States)

    Tseng, Chien-Fu; Tsai, Tsung-Yen; Huang, Yen-Hsiu; Lee, Ming-Tsang; Horng, Ray-Hua

    2015-12-01

    In this study a numerical simulation was carried out to analyze the transport phenomena in a vertical type metal organic chemical vapor deposition (MOCVD) reactor for Gallium Nitride (GaN) growth. The simulated results were compared and validated by experiment. The effects of showerhead design and chamber height are investigated and discussed. It was found that, by properly adjusting the height of the chamber, both the growth rate and film uniformity could be significantly improved. This is attributed to the suppression of the thermal and mass transfer boundary layers by the injection flow of reacting gas mixtures, as well as the confined vertical vortices caused by the geometry of the reduced space. However, inappropriate design of the distance between the showerhead and the susceptor can result in uneven distribution of the organic source in the vicinity of the substrate surface resulting in an uneven growth rate of the GaN film. Consequently, there exists an optimal chamber height that will give the best growth rate and uniformity to the GaN film as discussed in this study. This study provides comprehensive insight into the transport phenomena of GaN growth that includes coupled heat and mass transfer as well as chemical reactions. The results provide important information in a succinct format and enable decisions to be made about the showerhead and the geometrical design and size of a vertical MOCVD reactor.

  18. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

    Institute of Scientific and Technical Information of China (English)

    XIE Xin-Jian; CHEN Jia-Rong; CAO Xian-Cun; ZHONG Fei; QIU Kai; LIU Gui-Feng; YIN Zhi-Jun; WANG Yu-Qi; LI Xin-Hua; JI Chang-Jian; HAN Qi-Fen

    2006-01-01

    We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of about 1μm was initially grown on a (0001) sapphire substrate by molecular beam epitaxy. Then it was dealt by putting, into 45% NaOH solution at 100°C for Wmin. By this process a quasi-porous GaN Rim was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050°C in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.

  19. Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of “In+N” coverage and capping timing by GaN layer on effective InN thickness

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan); Kusakabe, Kazuhide; Hashimoto, Naoki [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Hwang, Eun-Sook; Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

    2016-01-11

    The growth front in the self-organizing and self-limiting epitaxy of ∼1 monolayer (ML)-thick InN wells on/in +c-GaN matrix by molecular beam epitaxy (MBE) has been studied in detail, with special attention given to the behavior and role of the N atoms. The growth temperatures of interest are above 600 °C, far higher than the typical upper critical temperature of 500 °C in MBE. It was confirmed that 2 ML-thick InN wells can be frozen/inserted in GaN matrix at 620 °C, but it was found that N atoms at the growth front tend to selectively re-evaporate more quickly than In atoms at temperatures higher than 650 °C. As a result, the effective thickness of inserted InN wells in the GaN matrix at 660–670 °C were basically 1 ML or sub-ML, even though they were capped by a GaN barrier at the time of 2 ML “In+N” coverage. Furthermore, it was found that the N atoms located below In atoms in the dynamic atomic layer epitaxy growth front had remarkably weaker bonding to the +c-GaN surface.

  20. Synthesis and characterization of a liquid Eu precursor (EuCp{sup pm}{sub 2}) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Brandon, E-mail: bmitchell@wcupa.edu [Department of Physics, West Chester University, West Chester, PA, 19383 (United States); Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Koizumi, Atsushi; Nunokawa, Takumi; Wakamatsu, Ryuta; Lee, Dong-gun; Saitoh, Yasuhisa; Timmerman, Dolf [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Kuboshima, Yoshinori; Mogi, Takayuki; Higashi, Shintaro; Kikukawa, Kaoru [Kojundo Chemical Laboratory Co., Ltd., 5-1-28 Chiyoda, Sakado, Saitama, 350-0284 (Japan); Ofuchi, Hironori; Honma, Tetsuo [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198 (Japan); Fujiwara, Yasufumi, E-mail: fujiwara@mat.eng.osaka-u.ac.jp [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan)

    2017-06-01

    A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu{sup 2+} to Eu{sup 3+} could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. - Highlights: • A liquid Eu precursor was synthesized and its properties were characterized. • Precursor has a low melting point and a moderately high vapor pressure. • Does not contain oxygen in its molecular structure. • Eu can changed its valance state when incorporated into GaN. • Valence state of Eu in GaN can be controlled by donor doping.

  1. Admittance spectroscopy of Mg-doped GaN grown by molecular beam epitaxy using RF nitrogen sources

    CERN Document Server

    Kim, D J; Kim, K H; Bojarczuk, N A; Karasinski, J; Guha, S; Lee, H G

    1999-01-01

    Thermal activation energies of Mg in GaN grown using RF nitrogen source with varying Mg flux were examined using an admittance spectroscopy technique. There was no noticeable difference or trend in the activation energy with varying Mg flux. The thermal activation energy for GaN:Mg was approx 115 meV under the investigated Mg flux range. Negligible persistent photo-conductivity and yellow luminescence peak in PL observed in the samples suggest possible reduction of the thermal activation energies compared to the values in the literature.

  2. Luminescence and Morphological Properties of GaN Layers Grown on SiC/Si(111) Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Garcia, M.A.; Ristic, J.; Calleja, E. [ISOM and Dpto. Ing. Electronica, ETSI Telecomunicacion, Univ. Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Perez-Rodriguez, A.; Serre, C.; Romano-Rodriguez, A.; Morante, J.R. [EME - Electronic Materials and Engineering, Department of Electronics, Universidad de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Koegler, R.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., 01314 Dresden (Germany); Trampert, A.; Ploog, K.H. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2002-08-16

    This article describes the fabrication of SiC thin films on top of Si(111) substrates by means of a multiple C-ion implantation and the subsequent growth by plasma-assisted molecular beam epitaxy of GaN layers. The stoichiometry of the top SiC layer is controlled by reactive ion etching. Photoluminescence spectra reveal that all GaN layers are under biaxial tensile strain of thermal origin. The photoluminescence efficiency clearly depends on the stoichiometry of the initial SiC layer and on whether AlN buffer layers are used or not. GaN layers grown directly on bare non-stoichiometric SiC layers exhibit the best photoluminescence efficiency but also a high degree of mosaicity, as measured by X-ray diffraction techniques. The nucleation process involved in the initial stages of the growth leads to the formation of large dislocation-free grains with a high PL efficiency and with a higher tensile strain character. Despite the lack of a perfect monocrystalline SiC substrate lattice, high quality GaN microcrystals are obtained. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  3. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  4. In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Fini, P. [Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Munkholm, A. [Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Thompson, Carol [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Stephenson, G. B. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Eastman, J. A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Murty, M. V. Ramana [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Auciello, O. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Zhao, L. [Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); DenBaars, S. P. [Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Speck, J. S. [Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

    2000-06-26

    By performing in situ, real-time x-ray diffraction measurements in the metalorganic chemical-vapor deposition environment, we have directly observed the emergence and evolution of wing tilt that occurs during the lateral overgrowth of GaN from stripes patterned in a SiO{sub 2} mask. This was done by repeatedly performing line scans through the 101(bar sign)3 peak in the direction perpendicular to the [101(bar sign)0]{sub GaN} stripe direction. The wing tilt developed as soon as the wings started forming, and increased slightly thereafter to reach a value of {approx}1.19 degree sign after 3600 s of growth. Upon cooldown to room temperature, the tilt increased to {approx}1.36 degree sign , indicating that thermally induced stresses during cooldown have only a small effect on wing tilt. However, changes in mask density, composition, and stress state during early lateral overgrowth must be considered as possible origins of wing tilt. (c) 2000 American Institute of Physics.

  5. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

    Science.gov (United States)

    2010-05-17

    properties of AlGaN/ GaN HEMTs grown on SiC sub- strates [11,15], and that these effects may vary with the proximity of the doped layer to the two...properties of Al- GaN / GaN HEMTs grown by rf-MBE on native GaN substrates. 2. Experimental Seven AlGaN/ GaN heterostructures were grown by rf-plasma assisted...buffer needs to include Be-doped GaN isolation layers in MBE-grown AlGaN/ GaN HEMTs and must be separated from the 2DEG by 200 nm to 500 nm. Acknowledgments

  6. GaN HEMTs

    Science.gov (United States)

    Anderson, Jonathan W.; Lee, Kyoung-Keun; Piner, Edwin L.

    2012-03-01

    Gallium nitride (GaN) has enormous potential for applications in high electron mobility transistors (HEMTs) used in RF and power devices. Intrinsic device properties such as high electron mobility, high breakdown voltage, very high current density, electron confinement in a narrow channel, and high electron velocity in the 2-dimensional electron gas of the HEMT structure are due in large part to the wide band gap of this novel semiconductor material system. This presentation discusses the properties of GaN that make it superior to other semiconductor materials, and outlines the research that will be undertaken in a new program at Texas State University to advance GaN HEMT technology. This program's aim is to further innovate the exceptional performance of GaN through improved material growth processes and epitaxial structure design.

  7. Si衬底上热壁外延制备GaAs单晶薄膜材料%Growth of Monocrystalline GaAs Layer on Si by Hot Wall Epitaxy

    Institute of Scientific and Technical Information of China (English)

    刘翔; 谭红琳; 吴长树; 张鹏翔; 赵德锐; 陈庭金; 廖世坤; 吴刚; 杨家明

    2000-01-01

    This paper reports the growth of GaAs layer on Si substrate by hot wall epitaxy (HWE). Si surface prior to epitaxy of GaAs layer is activated. Then two - step epitaxy is used to achieve GaAs layer. Finally, intermittent multi - layer cycle annealing (IMCA) is implemented to improve morphology and quality of the epitaxial layer. Measurement and analysis by electron probe micro - analysis (EPMA), Raman spectrum, Hall measurement and photo - luminescence (PL) confirm that GaAs layer with thickness of approximately 4 μm has been obtained.%报道了采用热壁外延(HWE)技术,在Si表面生长GaAs薄膜。先通过活化剂活化Si表面,再采取两步生长法外延GaAs单晶薄膜,最后进行断续多层循环退火(IMCA)。经电子探针(EPMA)、Raman光谱、Hall测量和荧光(PL)光谱测试分析,证实在Si表面获得了近4μm厚的GaAs单晶薄膜。

  8. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

    2016-09-15

    Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

  9. Molecular beam epitaxy of GaN(0001) utilizing NH{sub 3} and/or NH{sup +}{sub {ital x}} ions: Growth kinetics and defect structure

    Energy Technology Data Exchange (ETDEWEB)

    Lee, N.; Powell, R.C.; Kim, Y.; Greene, J.E. [Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

    1995-09-01

    Gas-source molecular beam epitaxy (GS-MBE), utilizing Ga and NH{sub 3}, and reactive-ion MBE (RIMBE), incorporating both thermal NH{sub 3} and low-energy NH{sup +}{sub {ital x}} ions, were used to grow single crystal GaN(0001) layers on Al{sub 2}O{sub 3}(0001) at temperatures {ital T}{sub {ital s}} between 700 and 850 {degree}C with deposition rates of 0.2--0.5 {mu}m h{sup {minus}1}. The RIMBE experiments were carried out with incident NH{sup +}{sub {ital x}}/Ga flux ratios {ital J}{sub NH{sup +}{sub {ital x}}}/{ital J}{sub Ga}=1.9--3.2 and NH{sup +}{sub {ital x}} acceleration energies {ital E}{sub NH{sup +}{sub {ital x}}}=45--90 eV. Plan-view and cross-sectional transmission electron microscopy analyses showed that the primary defects in the GS-MBE films were threading dislocations having either pure edge or mixed edge/screw characteristics with Burgers vectors {bar b}=1/3{l_angle}2{bar 1}{bar 1}0{r_angle}, basal-plane stacking faults with displacement vectors {bar R}=1/6{l_angle}02{bar 2}3{r_angle}, and prismatic stacking faults with {bar R}=1/2{l_angle}{bar 1}101{r_angle}. In the case of RIMBE films, no stacking faults or residual ion-induced defects were observed with {ital E}{sub NH{sup +}{sub {ital x}}}=45 eV and {ital T}{sub {ital s}}{ge}800 {degree}C. However, increasing {ital E}{sub NH{sup +}{sub {ital x}}} to {ge}60 eV at {ital T}{sub {ital s}}=800 {degree}C gave rise to the formation of residual ion-induced point-defect clusters observable by transmission electron microscopy (TEM). Increasing {ital T}{sub {ital s}} to 850 {degree}C with {ital E}{sub NH{sup +}{sub {ital x}}}{ge}60 eV resulted in the ion-induced defects aggregating to form interstitial basal and prismatic dislocation loops, whose number densities depended upon the ion flux, with Burgers vectors 1/2{l_angle}0001{r_angle} and 1/3{l_angle}2{bar 1}{bar 1}0{r_angle}, respectively. (Abstract Truncated)

  10. Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y}

    Energy Technology Data Exchange (ETDEWEB)

    Sobanska, M., E-mail: sobanska@ifpan.edu.pl; Zytkiewicz, Z. R.; Klosek, K.; Tchutchulashvili, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Korona, K. P. [Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland)

    2015-11-14

    Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al{sub x}O{sub y} buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-Al{sub x}O{sub y} are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 °C, which allowed determination of nucleation energy of the NWs on a-Al{sub x}O{sub y} equal to 6 eV. This value is smaller than 10.2 eV we found under the same conditions on nitridized Si(111) substrates. Optical properties of GaN NWs on a-Al{sub x}O{sub y} are analyzed as a function of the growth temperature and compared with those on Si(111) substrates. A significant increase of photoluminescence intensity and much longer PL decay times, close to those on silicon substrates, are found for NWs grown at the highest temperature proving their high quality. The samples grown at high temperature have very narrow PL lines. This allowed observation that positions of donor-bound exciton PL line in the NWs grown on a-Al{sub x}O{sub y} are regularly lower than in samples grown directly on silicon suggesting that oxygen, instead of silicon, is the dominant donor. Moreover, PL spectra suggest that total concentration of donors in GaN NWs grown on a-Al{sub x}O{sub y} is lower than in those grown under similar conditions on bare Si. This shows that the a-Al{sub x}O{sub y} buffer efficiently acts as a barrier preventing uptake of silicon from the substrate to GaN.

  11. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Shivaraman, Ravi; Wu, Feng; Kaun, Stephen W.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-02-17

    The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

  12. Growth of c-plane ZnO on γ-LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yan, T. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 (China); Lu, C.-Y.J. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schuber, R. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Chang, L., E-mail: lwchang@mail.nsysu.edu.tw [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schaadt, D.M. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Institute of Energy Research and Phyiscal Technologies, Clausthal Technical University, Am Stollen 19B, D-38640 Goslar (Germany); Chou, M.M.C.; Ploog, K.H. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Chiang, C.-M. [Department of Chemistry, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China)

    2015-10-01

    Highlights: • ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10{sup 10} cm{sup −2}) as compared to those grown on LiAlO{sub 2} substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission.

  13. Monocrystalline silicon used for integrated circuits: still on the way

    Institute of Scientific and Technical Information of China (English)

    Jia-he CHEN; De-ren YANG; Duan-lin QUE

    2008-01-01

    With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impur-ities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insu-lator) are reviewed. It is proposed that the silicon man-ufacturing infrastructure could still meet the increasingly stringent requirements arising from ULSI circuits and will expand Moore's law into a couple of decades.

  14. Stress relaxation in thick-film GaN grown by hydride vapor phase epitaxy on sapphire and spinel substrates as studied by photoluminescence and raman spectroscopy

    CERN Document Server

    Kim, S T; Lee, C; Kim, J E; Park, H Y

    1999-01-01

    The residual strains in thick-film GaN grown on both sapphire and spinel substrates has been evaluated by photoluminescence (PL) and raman spectroscopy . The strain-free shallow donor bound exciton recombination energy (I sub 2) is 3.468 eV at 10 K. The raman mode frequency shift with residual strain with estimated as DELTA w = 3.93 cm sup - sup 1 per one GPa for GaN layers on both substrates . The linear relationship between the PL I sub 2 line and the raman E sub 2 mode frequency is DELTA E/DELTA w = 5.12 meV/cm sup - sup 1 , which leads to a stress-induced PL line shift of DELTA E = 20 meV/GPa.

  15. GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off

    Science.gov (United States)

    Mu, Fengwen; Morino, Yuki; Jerchel, Kathleen; Fujino, Masahisa; Suga, Tadatomo

    2017-09-01

    Room temperature GaN-Si direct wafer bonding was done by surface activated bonding (SAB). At first, a feasibility study using GaN template has been done. Then, crystal-face dependence of the bonding results for freestanding GaN substrate has been investigated between Ga-face and N-face. The results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy and larger bonded area. This difference should be caused by their different surface roughnesses after chemical-mechanical polishing (CMP). Besides, both of the structure and composition of the two kinds of interfaces were investigated to understand the bonding mechanisms. The phenomenon of Ga-enrichment during surface activation and Ga-diffusion into Si at room temperature for both Ga-face bonding and N-face bonding has been confirmed.

  16. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon

    Energy Technology Data Exchange (ETDEWEB)

    Cayrel, F.; Menard, O.; Alquier, D. [Laboratoire de Microelectronique de Puissance, Universite de Tours (France); Yvon, A.; Collard, E. [STMicroelectronics, Tours (France); Thierry-Jebali, N.; Brylinsky, C. [Laboratoire des Multimateriaux et Interfaces, Universite Claude Bernard Lyon1, Lyon (France)

    2012-06-15

    In this work, the Ti/Al Ohmic contact quality on n-type gallium nitride (GaN) films has been studied as a function of different process parameters such as surface cleaning procedure, etching, thickness of the deposited layers or annealing conditions. GaN epilayers, with uniform doping concentration from 1 x 10{sup 16} to 5.8 x 10{sup 18} at./cm{sup 3} were grown on sapphire or silicon substrates using AlN and/or AlGaN buffer layers. Electrical characterizations were made using circular transfer length method (cTLM) patterns with a four-probe equipment. Specific contact resistance (SCR) was then extracted from current-voltage (I-V) characteristics, for all the process conditions. Contact structures depending on experiment parameters were studied by means of (scanning) transmission electronic microscopy (STEM-TEM). Our results reveal that process parameters such as surface treatment have a lower impact than annealing temperature or metal thickness and annealing duration. Finally, SCR values of 1 x 10{sup -6} {omega} cm{sup 2} can be reproducibly achieved. Moreover, good Ohmic contacts have been obtained on etched surfaces or on low-doped layers implanted with Si. This low value demonstrates a good Ohmic contact and this large parameter process window is of high interest for future device fabrication based on GaN (planar or mesa structures). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  18. III-nitride grown on freestanding GaN nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongjin; Zhu, Hongbo [Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003 (China); Hu, Fangren; Hane, Kazuhiro [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2012-03-15

    We report here the epitaxial growth of III-nitride on the freestanding GaN nanostructures by molecular beam epitaxy growth. Various GaN nanostructures are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN nanostructures is removed from the backside to form the freestanding GaN slab, and the epitaxial growth of III-nitride by MBE is performed on the prepared GaN template. The selective growth takes place with the assistance of GaN nanostructures and generates hexagonal III-nitride pyramids. Thin epitaxial structures, depending on the shape and the size of GaN nanostructure, can produce the promising optical performance. This work opens the way to combine silicon micromachining with the epitaxial growth of III-nitride by MBE on GaN-on-silicon substrate for further integrated optics (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Armitage, R.; Suda, J.; Kimoto, T. [Department of Electronics Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510 (Japan)

    2005-05-01

    Nitrogen-polar GaN was grown on lattice-matched ZrB{sub 2} substrates by a two-step rf-MBE process with conventional low-temperature GaN (LT-GaN) used as the nucleation layer. For nucleation in slightly Ga-rich conditions, a streaky RHEED pattern was maintained from the very beginning and persisted throughout subsequent high-temperature growth. However, despite the streaky RHEED pattern the initial nucleation was evidently not 2D as inferred from AFM and x-ray results. For nucleation in slightly N-rich conditions, spots appeared in the RHEED in the early stages of growth but a streak pattern was restored with high-temperature GaN growth. Tradeoffs were identified in optimizing the LT-GaN nucleation process. Slightly Ga-rich nucleation conditions offered the best x-ray characteristics with {omega}-scan FWHM values of 400-500 and 720-800 arcsec for the (0002) and (1 anti 104) reflections, respectively. Short-length atomic steps (up to {proportional_to}200 nm) were present on the surfaces of such layers, but the morphology showed a sub-grain structure. Slightly N-rich nucleation conditions yielded remarkably smooth films surfaces (rms 0.5 nm over 10 {mu}m{sup 2}) with uninterrupted atomic steps up to several {mu}m long, but inferior x-ray {omega}-scans ({proportional_to}50% larger FWHM values). (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Growth of Y3Fe5O12/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

    Science.gov (United States)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-12-01

    Laser molecular-beam epitaxy has been employed to obtain layers of yttrium-iron garnet (YIG) Y3Fe5O12 on gallium nitride substrates. It was found that there exists a polycrystalline YIG phase without admixtures of other structural phases. A magnetic anisotropy of films of the "easy-magnetic plane" type was found. The gyromagnetic ratio and the demagnetizing field 4π M S were calculated.

  1. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH3:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH3:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of ˜1.0 nm over 2×2 μm2 atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 μm/h were achieved. TD densities in the buffers as low as 3×109 cm-2 were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  2. Low yield sputtering of monocrystalline metals

    NARCIS (Netherlands)

    Veen, A. van; Fluit, J.M.

    1980-01-01

    Sputtering of monocrystalline metals by light noble gas ions is studied experimentally and theoretically at low primary ion energy. Evidence is found for a multiple collision process in which surface atoms are sputtered by backscattered ions. The introduction of the maximum recoil energy EM in the s

  3. Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches

    Institute of Scientific and Technical Information of China (English)

    Bose Srikanta; Mazumder S K

    2013-01-01

    We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms:(a) p-GaN over p-(4H)SiC,and (b) p-GaN over n-(4H)SiC with AlN as the interface layer.In all of the cases,n+-doped (4H)SiC serves as the cathode substrate.Pd(200(A))/Au(10000 (A)) is used for the anode contact while Ni(1000 (A)) is used for the bottom cathode contact.The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas,it is 3 V for the other sample structure.The measured reverse-blocking voltage is found to be greater than 200 V.

  4. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    Science.gov (United States)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-03-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer.

  5. GaN Nanowire Arrays for High-Output Nanogenerators

    KAUST Repository

    Huang, Chi-Te

    2010-04-07

    Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and the substrate surface is ∼62°. The GaN NW arrays produce negative output voltage pulses when scanned by a conductive atomic force microscope in contact mode. The average of piezoelectric output voltage was about -20 mV, while 5-10% of the NWs had piezoelectric output voltages exceeding -(0.15-0.35) V. The GaN NW arrays are highly stable and highly tolerate to moisture in the atmosphere. The GaN NW arrays demonstrate an outstanding potential to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. © 2010 American Chemical Society.

  6. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hardy, Matthew T., E-mail: matthew.hardy.ctr@nrl.navy.mil; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J. [Electronics Science and Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375 (United States); McConkie, Thomas O.; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Nepal, Neeraj [Sotera Defense Solutions, 2200 Defense Hwy Suite 405, Crofton, Maryland 21114 (United States)

    2016-03-15

    The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10{sup 13 }cm{sup −2} and no degradation in mobility (1760 cm{sup 2}/V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE.

  7. Investigation and comparison of GaN nanowire nucleation and growth by the catalyst-assisted and self-induced approaches

    Energy Technology Data Exchange (ETDEWEB)

    Cheze, Caroline

    2010-03-04

    This work focuses on the nucleation and growth mechanisms of GaN nanowires (NWs) by molecular beam epitaxy (MBE). The two main novelties of this study are the intensive employment of in-situ techniques and the direct comparison of selfinduced and catalyst-induced NWs. On silicon substrates, GaN NWs form in MBE without the use of any external catalyst seed. On sapphire, in contrast, NWs grow under identical conditions only in the presence of Ni seeds. NW nucleation was studied in situ by reflection high-energy electron diffraction (RHEED) in correlation with line-of-sight quadrupole mass spectrometry (QMS). The latter technique allows to monitor the incorporated amount of Ga. For the catalyst-assisted approach, three nucleation stages were identified: first incorporation of Ga into the Ni seeds, second transformation of the seed crystal structure due to Ga accumulation, and last GaN growth under the seeds. The crystalline structure of the seeds during the first two stages is in accord with the Ni-Ga binary phase diagram and evidenced that only Ga incorporates into the Ni particles. GaN forms only after the Ga concentration is larger than the one of Ni. The observation of diffraction patterns generated by the Ni-Ga seed particles during the whole nucleation evidences the solid state of the seeds. Moreover, the QMS study showed that it is not Ga incorporation into Ni but GaN nucleation itself that limits the growth processes. For the self-induced NWs, QMS and RHEED investigations indicate very similar nucleation processes on Si(001) and Si(111) and two nucleation stages were identified. Transmission electron microscopy on samples grown on Si(001) revealed that the first stage is characterized by the competition between the nucleation of crystalline Si{sub x}N{sub y} and GaN. During this stage, the Si surface strongly roughens by the formation of pits and Si mounds. At the same time, very few GaN islands nucleate. During the second stage, the amorphization of the Si

  8. Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    Science.gov (United States)

    Stoddard, Nathan G

    2014-01-14

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  9. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    Science.gov (United States)

    Stoddard, Nathan G.

    2011-11-01

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  10. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  11. Investigation of deep levels in bulk GaN

    OpenAIRE

    2014-01-01

    The first gallium nitride (GaN) crystal was grown by hydride vapor phase epitaxy in 1969 by Maruska and Tietjen and since then, there has been an intensive development of the field, especially after the ground breaking discoveries concerning growth and p-type doping of GaN done by the 2014 year Nobel Laureates in Physics, Isamu Akasaki, Hiroshi Amano and Shuji Nakamura. GaN and its alloys with In and Al belong to a semiconductor group which is referred as the III-nitrides. It has outstanding ...

  12. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  13. Wetting of Au and Ag particles on monocrystalline graphite substrates

    Institute of Scientific and Technical Information of China (English)

    Joonho Lee; Toshihiro Tanaka; Kazufumi Seo; Nobumitsu Hirai; Jung-Goo Lee; Hirotaro Mori

    2006-01-01

    The wetting behavior of Au and Ag particles on a monocrystalline graphite substrate was investigated using the microscopic sessile drop method under a purified Ar atmosphere at 1300 K. The measured contact angles of the liquid Au and Ag on monocrystalline graphite substrates of (0001) face were 129° and 124°, respectively. It is believed that the interaction at the interface is dominated by the physical bonding (van der Waal's interaction).

  14. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

    2016-04-13

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  15. Growth of ZnO and GaN Films

    Science.gov (United States)

    Chang, J.; Hong, S.-K.; Matsumoto, K.; Tokunaga, H.; Tachibana, A.; Lee, S. W.; Cho, M.-W.

    . Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology, and fusion technology among all these. As a fundamental starting point for the development of this new technique, epitaxy of ZnO and GaN films is one of the most important key technology. Hence, development of the growth technique for high quality epitaxial films is highly necessary. Among the various kinds of epi taxy technique for semiconductor films developed so far, physical vapor deposition (PVD)-based epitaxy technique has been revealed to be the appropriate way for the high quality ZnO film and related alloy growths, while chemical vapor deposition (CVD)-based epitaxy technique has been proved to be the best method for the high quality GaN film and related alloy growths.

  16. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  17. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  18. The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    Liu Zhe; Wang Xiao-Liang; Wang Jun-Xi; Hu Guo-Xin; Guo Lun-Chun; Li Jin-Min

    2007-01-01

    AIN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AIN/GaN superlattice buffer layer. The influence of AIN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by vising AIN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

  19. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

    Institute of Scientific and Technical Information of China (English)

    Yin Haibo; Wang Xiaoliang; Ran Junxue; Hu Guoxin; Zhang Lu; Xiao Hongling; Li Jing; Li Jinmin

    2011-01-01

    A homemade 7 × 2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown.The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers,blue LED chips with area of 350 × 350μm2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.

  20. Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

    Science.gov (United States)

    Ali, M.; Romanov, A. E.; Suihkonen, S.; Svensk, O.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2011-01-01

    We present the results of GaN re-growth on hexagonally patterned GaN templates. Sapphire was used as the original substrate and the samples were grown by metalorganic vapor phase epitaxy (MOVPE). The re-growth on the patterned templates results in the formation of voids at the GaN/sapphire interface. Our extensive scanning electron microscopy (SEM)-based experimental investigations show that the void shape can be controlled from nearly vertical to fully inclined configurations. It was found that the initial hexagon hole diameter plays a key role in determining the final profile of the void sidewalls. X-ray diffraction analysis of the GaN layers indicates that the layers with inclined sidewall voids have an improved crystalline quality. Knowledge of the void configurations in the GaN layers and a possibility to control their shape can help in enhancing light extraction from the light emitting structures.

  1. Growth and characterisation of GaN

    CERN Document Server

    Li, T

    2002-01-01

    This thesis describes mainly the studies on growth mechanism of GaN in UHV-MOVPE process, and structural and optical properties of As-doped GaN films grown by PA-MBE. In a novel Thomas Swan growth chamber, we have grown GaN films on Si substrates using TEGa, plasma nitrogen and ammonia. Using a combination of in-situ optical reflectivity and mass spectrometry, we have investigated the parameters controlling the growth process of UHV-MOVPE. In particular we have used sup 1 sup 5 N in order to distinguish gas phase species containing N from those associated purely with metal-organics. We found the surface pyrolysis of TEGa is the rate limiting step, which is similar to GaAs grown by CBE. We also identify the parasitic reactions costing the active nitrogen from plasma, which in turn limits the growth rate. Using Philips X' pert MRD, we have investigated the structural properties of As-doped GaN epitaxial films on sapphire grown by PA-MBE including phase, lattice parameters and mosacity. We have also studied the ...

  2. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

    OpenAIRE

    Hashizume, Tamotsu; Ootomo, Shinya; Oyama, Susumu; Konishi, Masanobu; Hasegawa, Hideki

    2001-01-01

    Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, and current–voltage measurements. From in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2×2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template. After exposing the sample surface to air, strong band bending took...

  3. Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof

    KAUST Repository

    Bakr, Osman M.

    2017-03-02

    Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see fig. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.

  4. Controlling the morphology of GaN layers grown on AlN in Ga self-surfactant conditions: from quantum wells to quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adelmann, C.; Daudin, B.; Monroy, E.; Sarigiannidou, E.; Rouviere, J.L.; Hori, Y.; Brault, J.; Gogneau, N. [Departement de Recherche Fondamentale sur la Matiere Condensee, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France); Fanget, S.; Bru-Chevallier, C. [Laboratoire de Physique de la Matiere - CNRS (UMR5511), INSA de Lyon, Batiment Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2002-12-01

    We show that the growth mode of GaN deposited by plasma-assisted molecular beam epitaxy on AlN can be controlled by tuning Ga/N ratio. This enables to grow either quantum dots (Ga/N<1) or quantum wells (Ga/N>>1). The inhibition of 2D/3D transition results from a decrease in effective mismatch induced by the presence of a continuous Ga film on growing GaN surface in Ga-rich conditions. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  5. Growth by atomic layer epitaxy and characterization of thin films of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Kopalko, K.; Lusakowska, E.; Paszkowicz, W.; Domagala, J.Z.; Szczerbakow, A.; Swiatek, K.; Dybko, K. [Institute of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Wojcik, A.; Godlewski, M. [Institute of Physics, Polish Acad. of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Dep. of Mathem. and Natural Sci. College of Science, Cardinal S. Wyszynski Univ., Warsaw (Poland); Godlewski, M.M. [Dept. of Physiology, Biochem., Pharmacology and Toxicology, Fac. of Veterinary Medicine, Warsaw Agriculture University, Warsaw (Poland)

    2005-02-01

    ABSTRACT Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al{sub 2}O{sub 3} substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  7. Taevo Gans / Ene Ammer

    Index Scriptorium Estoniae

    Ammer, Ene

    1998-01-01

    Sisearhitekt Taevo Gansist. Tudengipõlvest, selle aja projektidest, sõpruskonnast, tandemist Summatavet & Gans, Venemaa tellimustest, kaastöölistest. Üksinda Hommilkumaal vene tarbekunsti näitusega 1974. a. 1988. a. loodud perefirmast "GaDis" (omanikud Taevo, Helle Gans, Riia Oja), mis nõustab ka "Wermot" mööbli osas. "GaDise" sisekujundusprojektidest, millega Taevo ja Helle Gans tegelevad üheskoos

  8. Ferromagnetism in undoped One-dimensional GaN Nanowires

    Directory of Open Access Journals (Sweden)

    K. Jeganathan

    2014-05-01

    Full Text Available We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10−8 mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  9. Ivestigation of an InGaN - GaN nanowire heterstructure

    Energy Technology Data Exchange (ETDEWEB)

    Limbach, Friederich; Gotschke, Tobias; Stoica, Toma; Calarco, Raffaella; Gruetzmacher, Detlev [Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH, Juelich (Germany); JARA-Fundamentals of Future Information Technology, Juelich (Germany); Sutter, Eli; Ciston, Jim [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY (United States); Cusco, Ramon; Artus, Luis [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Barcelona, Catalonia (Spain); Kremling, Stefan; Hoefling, Sven; Worschech, Lukas [University Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wuerzburg (Germany)

    2011-07-01

    InGaN/GaN nanowire (NW) heterostructures grown by molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multi-faceted InGaN cap wrapping the top part of the GaN NW. Transmission electron microscopy images taken from different parts of a InGaN/GaN nanowire show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it. Photoluminescence spectra of these heterostructure NW ensembles show an emission peak at 2.1 eV. However, {mu}-PL spectra measured on single nanowires reveal much sharper luminescence peaks. A Raman analysis reveals a variation of the In content between 20 % and 30 %, in agreement with PL and TEM investigations.

  10. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  11. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    Science.gov (United States)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  12. Monocrystalline solar cells are gaining ground; Monokristallin im Aufwind

    Energy Technology Data Exchange (ETDEWEB)

    Bernreuter, Johannes

    2011-10-31

    Increasingly, manufacturers use selective emitters for serial production of solar cells of monocrystalline silicon with an efficiency of 19 percent. Strong competition will soon have them reach 20 percent. For the same reason, copper will become a substitute for expensive silver front contacts.

  13. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

    Science.gov (United States)

    Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong

    2016-10-01

    We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser.

  14. GaN membrane MSM ultraviolet photodetectors

    Science.gov (United States)

    Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

    2006-12-01

    GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

  15. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Yao; JIANG Yang; XU Pei-Qiang; MA Zi-Guang; WANG Xiao-Li; WANG Lu; JIA Hai-Qiang; CHEN Hong

    2011-01-01

    The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AIN buffer by metalorganic chemical wpor deposition is investigated.It is found that the insertion of a graded AlGaN layer between the GaN layer and the AIN buffer can change the signs of strain.A compressive strain in an overgrown thick (2 μm) GaN layer is obtained.High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers.The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.%@@ The strain in GaN epitaxial layers grown on 611-SiC substrates with an AIN buffer by metalorganic chemical vapor deposition is investigated.It is found that the insertion of a graded AlGaN layer between the GaN layer and the AIN buffer can change the signs of strain.A compressive strain in an overgrown thick(2μm)GaN layer is obtained.High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers.The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.

  16. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

    Science.gov (United States)

    Fernández-Garrido, Sergio; Kong, Xiang; Gotschke, Tobias; Calarco, Raffaella; Geelhaar, Lutz; Trampert, Achim; Brandt, Oliver

    2012-12-12

    We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained AlN layers on 6H-SiC(0001) and SiC(0001̅) substrates to ensure a well-defined polarity and an absence of structural and morphological defects. On N-polar AlN, a homogeneous and dense N-polar GaN nanowire array forms, evidencing that GaN nanowires form spontaneously in the absence of defects. On Al-polar AlN, we do not observe the formation of Ga-polar GaN NWs. Instead, sparse N-polar GaN nanowires grow embedded in a Ga-polar GaN layer. These N-polar GaN nanowires are shown to be accidental in that the necessary polarity inversion is induced by the formation of Si(x)N. The present findings thus demonstrate that spontaneously formed GaN nanowires are irrevocably N-polar. Due to the strong impact of the polarity on the properties of GaN-based devices, these results are not only essential to understand the spontaneous formation of GaN nanowires but also of high technological relevance.

  17. Stress and Defect Control in GaN Using Low Temperature Interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Iwaya, M.; Kashima, T.; Katsuragcawa, M.

    1998-12-04

    In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.

  18. Study of Charge Carrier Transport in GaN Sensors

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2016-04-01

    Full Text Available Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE GaN material have been estimated as μe = 1000 ± 200 cm2/Vs for electrons, and μh = 400 ± 80 cm2/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  19. Study of Charge Carrier Transport in GaN Sensors.

    Science.gov (United States)

    Gaubas, Eugenijus; Ceponis, Tomas; Kuokstis, Edmundas; Meskauskaite, Dovile; Pavlov, Jevgenij; Reklaitis, Ignas

    2016-04-18

    Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of excess carrier domains. Profiling of the carrier injection location allows for the separation of the bipolar and the monopolar charge drift components. Carrier mobility values attributed to the hydride vapor phase epitaxy (HVPE) GaN material have been estimated as μe = 1000 ± 200 cm²/Vs for electrons, and μh = 400 ± 80 cm²/Vs for holes, respectively. Current transients under injection of the localized and bulk packets of excess carriers have been examined in order to determine the surface charge formation and polarization effects.

  20. GaN as a radiation hard particle detector

    Science.gov (United States)

    Grant, J.; Bates, R.; Cunningham, W.; Blue, A.; Melone, J.; McEwan, F.; Vaitkus, J.; Gaubas, E.; O'Shea, V.

    2007-06-01

    Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed machine upgrade, the Super-LHC (SLHC), to 10 times the initial luminosity of the LHC will require detectors that are ultra-radiation hard. Much of the current research into finding a detector that will meet the requirements of the SLHC has focused on using silicon substrates with enhanced levels of oxygen, for example Czochralski silicon and diffusion oxygenated float zone silicon, and into novel detector structures such as 3D devices. Another avenue currently being investigated is the use of wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN should be intrinsically more radiation hard than silicon. Pad and guard ring structures were fabricated on three epitaxial GaN wafers. The epitaxial GaN thickness was either 2.5 or 12 μm and the fabricated detectors were irradiated to various fluences with 24 GeV/c protons and 1 MeV neutrons. Detectors were characterised pre- and post-irradiation by performing current-voltage ( I- V) and charge collection efficiency (CCE) measurements. Devices fabricated on 12 μm epitaxial GaN irradiated to fluences of 1016 protons cm-2 and 1016 neutrons cm-2 show maximum CCE values of 26% and 20%, respectively, compared to a maximum CCE of 53% of the unirradiated device.

  1. Gallium incorporation kinetics during GSMBE of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Jones, C.R.; Kaspi, R. [Wright State Univ. Research Center, Dayton, OH (United States); Lei, T.; Evans, K.R. [Wright Lab., Wright-Patterson AFB, OH (United States). Solid State Electronics Directorate

    1996-11-01

    The kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: (1) react with NH{sub 3} to form GaN; (2) accumulate on the film surface, or (3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH{sub 3} towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH{sub 3} flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750 C and increases with NH{sub 3} flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelihood that hydrogen is playing an important role.

  2. Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

    Science.gov (United States)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2011-08-01

    The structural stability of carbon incorporated GaN(1101) surfaces is theoretically investigated by performing first-principles pseudopotential calculations. The calculated surface formation energies taking account of the metal organic vapor phase epitaxy conditions demonstrate that several carbon incorporated surfaces are stabilized depending on the growth conditions. Using surface phase diagrams, which are obtained by comparing the calculated adsorption energy with vapor-phase chemical potentials, we find that the semipolar surface forms NH2 and CH2 below ˜1660 K while the polar GaN(0001) surface with CH3 is stabilized below ˜1550 K. This difference could be one of possible explanations for p-type doping on the semipolar GaN(1101) surface.

  3. Hafnium nitride buffer layers for growth of GaN on silicon

    Science.gov (United States)

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  4. Loss analysis of back-contact back-junction thin-film monocrystalline silicon solar cells

    Science.gov (United States)

    Haase, F.; Eidelloth, S.; Horbelt, R.; Bothe, K.; Garralaga Rojas, E.; Brendel, R.

    2011-12-01

    We investigate power losses in back-contact back-junction monocrystalline thin-film silicon solar cells fabricated using the porous silicon layer transfer process. Our loss analysis combines two-dimensional finite element modeling and resistance network simulations. The input parameters of the finite element modeling are determined experimentally by measuring saturation current densities and sheet resistances on test samples prepared identically to the solar cells. Characteristic solar cell parameters such as short circuit current, open circuit voltage, fill factor, and efficiency of measured and network simulated current voltage characteristics investigated in this study match within an uncertainty of 5%. Free energy loss analysis serves as comparison of all losses in units of power per area at the maximum power point. The largest loss is bulk recombination due to a carrier lifetime of 2 μs in the epitaxial Si layer. Further significant losses result from recombination at the base contacts characterized by a diode saturation current density of 50 000 fA cm-2 as well as resistive losses due to lateral majority carrier current flows within the solar cell base and contact resistance losses.

  5. Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells.

    Science.gov (United States)

    Meng, Xianqin; Depauw, Valérie; Gomard, Guillaume; El Daif, Ounsi; Trompoukis, Christos; Drouard, Emmanuel; Jamois, Cécile; Fave, Alain; Dross, Frédéric; Gordon, Ivan; Seassal, Christian

    2012-07-02

    In this paper, we present the integration of an absorbing photonic crystal within a monocrystalline silicon thin film photovoltaic stack fabricated without epitaxy. Finite difference time domain optical simulations are performed in order to design one- and two-dimensional photonic crystals to assist crystalline silicon solar cells. The simulations show that the 1D and 2D patterned solar cell stacks would have an increased integrated absorption in the crystalline silicon layer would increase of respectively 38% and 50%, when compared to a similar but unpatterned stack, in the whole wavelength range between 300 nm and 1100 nm. In order to fabricate such patterned stacks, we developed an effective set of processes based on laser holographic lithography, reactive ion etching and inductively coupled plasma etching. Optical measurements performed on the patterned stacks highlight the significant absorption increase achieved in the whole wavelength range of interest, as expected by simulation. Moreover, we show that with this design, the angle of incidence has almost no influence on the absorption for angles as high as around 60°.

  6. Sunlight-thin nanophotonic monocrystalline silicon solar cells

    Science.gov (United States)

    Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

    2017-09-01

    Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

  7. Hollow carbon nanobubbles: monocrystalline MOF nanobubbles and their pyrolysis.

    Science.gov (United States)

    Zhang, Wei; Jiang, Xiangfen; Zhao, Yanyi; Carné-Sánchez, Arnau; Malgras, Victor; Kim, Jeonghun; Kim, Jung Ho; Wang, Shaobin; Liu, Jian; Jiang, Ji-Sen; Yamauchi, Yusuke; Hu, Ming

    2017-05-01

    While bulk-sized metal-organic frameworks (MOFs) face limits to their utilization in various research fields such as energy storage applications, nanoarchitectonics is believed to be a possible solution. It is highly challenging to realize MOF nanobubbles with monocrystalline frameworks. By a spatially controlled etching approach, here, we can achieve the synthesis of zeolitic imidazolate framework (ZIF-8) nanobubbles with a uniform size of less than 100 nm. Interestingly, the ZIF-8 nanobubbles possess a monocrystalline nanoshell with a thickness of around 10 nm. Under optimal pyrolytic conditions, the ZIF-8 nanobubbles can be converted into hollow carbon nanobubbles while keeping their original shapes. The structure of the nanobubble enhances the fast Na(+)/K(+) ion intercalation performance. Such remarkable improvement cannot be realized by conventional MOFs or their derived carbons.

  8. Negative refraction at deep-ultraviolet frequency in monocrystalline graphite

    OpenAIRE

    Sun, Jingbo; Zhou, Ji; Kang, Lei; Wang, Rui; Meng, Xianguo; Li, Bo; Kang, Feiyu; Li, Longtu

    2010-01-01

    Negative refraction is such a prominent electromagnetic phenomenon that most researchers believe it can only occur in artificially engineered metamaterials. In this article, we report negative refraction for all incident angles for the first time in a naturally existing material. Using ellipsometry measurement of the equifrequency contour in the deep-ultraviolet frequency region (typically 254 nm), obvious negative refraction was demonstrated in monocrystalline graphite for incident angles ra...

  9. NANOSCALE CUTTING OF MONOCRYSTALLINE SILICON USING MOLECULAR DYNAMICS SIMULATION

    Institute of Scientific and Technical Information of China (English)

    LI Xiaoping; CAI Minbo; RAHMAN Mustafizur

    2007-01-01

    It has been found that the brittle material, monocrystalline silicon, can be machined in ductile mode in nanoscale cutting when the tool cutting edge radius is reduced to nanoscale and the undeformed chip thickness is smaller than the tool edge radius. In order to better understand the mechanism of ductile mode cutting of silicon, the molecular dynamics (MD) method is employed to simulate the nanoscale cutting of monocrystalline silicon. The simulated variation of the cutting forces with the tool cutting edge radius is compared with the cutting force results from experimental cutting tests and they show a good agreement. The results also indicate that there is silicon phase transformation from monocrystalline to amorphous in the chip formation zone that can be used to explain the cause of ductile mode cutting. Moreover, from the simulated stress results, the two necessary conditions of ductile mode cutting, the tool cutting edge radius are reduced to nanoscale and the undeformed chip thickness should be smaller than the tool cutting edge radius, have been explained.

  10. Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

    Science.gov (United States)

    Le Boulbar, E. D.; Gîrgel, I.; Lewins, C. J.; Edwards, P. R.; Martin, R. W.; Šatka, A.; Allsopp, D. W. E.; Shields, P. A.

    2013-09-01

    The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and without the introduction of a hydrogen silsesquioxane passivation layer at the bottom of the etched nanorod arrays. This layer successfully prevented c-plane growth between the nanorods, resulting in vertical nanorod sidewalls (˜89.8°) and a more regular height distribution than re-growth on unpassivated nanorods. The height variation on passivated nanorods is solely determined by the uniformity of nanorod diameter, which degrades with increased growth duration. Facet-dependent indium incorporation of GaN/InGaN/GaN core-shell layers regrown onto the etched nanorods is observed by high-resolution cathodoluminescence imaging. Sharp features corresponding to diffracted wave-guide modes in angle-resolved photoluminescence measurements are evidence of the uniformity of the full core-shell structure grown on ordered etched nanorods.

  11. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  12. Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013

    Energy Technology Data Exchange (ETDEWEB)

    Ravi, T. S.

    2013-05-01

    Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

  13. Thin-film monocrystalline-silicon solar cells based on a seed layer approach with 11% efficiency

    Science.gov (United States)

    Gordon, I.; Qiu, Y.; Van Gestel, D.; Poortmans, J.

    2010-09-01

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. Almost half of the price of wafer-based silicon solar modules is currently due to the cost of the silicon wafers themselves. Using crystalline-silicon thin-film as the active material would substantially reduce the silicon consumption while still ensuring a high cell-efficiency potential and a stable cell performance. One way to create a crystalline-silicon thin film on glass is by using a seed layer approach in which a thin crystalline-silicon layer is first created on a non-silicon substrate, followed by epitaxial thickening of this layer. In this paper, we present new solar cell results obtained on 10-micron thick monocrystalline-silicon layers, made by epitaxial thickening of thin seed layers on transparent glass-ceramic substrates. We used thin (001)-oriented silicon single-crystal seed layers on glass-ceramic substrates provided by Corning Inc. that are made by a process based on anodic bonding and implant-induced separation. Epitaxial thickening of these seed layers was realized in an atmospheric-pressure chemical vapor deposition system. Simple solar cell structures in substrate configuration were made from the epitaxial mono-silicon layers. The Si surface was plasma-textured to reduce the front-side reflection. No other light trapping features were incorporated. Efficiencies of up to 11% were reached with Voc values above 600 mV indicating the good electronic quality of the material. We believe that by further optimizing the material quality and by integrating an efficient light trapping scheme, the efficiency potential of these single-crystal silicon thin films on glass-ceramics should be higher than 15%.

  14. Macro-pyramid in GaN Film

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jing; YANG Zhi-Jian; XU Shi-Fa; ZHU Xing; ZHANG Guo-Yi

    2001-01-01

    A thin film of GaN with the thickness of 1.0μm was grown on α-Al2Oa substrate by metal organic chemical vapour disposition and then a thick GaN film with thickness of 12μm was grown in the halide vapour phase epitaxy system. Some macro-pyramids appeared on the surface of the sample. The macro-pyramids made the surfaceof the GaN film rough, which was harmful to the devices made by GaN materials. These defects changed the distribution of carrier concentration and affected the optical properties of GaN. The step height of the pyramids was about 30-40 nm measured by atomic force microscopy. A simple model was proposed to explain the macro- pyramid phenomenon compared with the growth spiral The growth of the macro-pyramid was relative to the physical conditions in the reaction zone. Both increasing growth temperature and low pressure may reduce the pyramid size.

  15. Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

    Directory of Open Access Journals (Sweden)

    Tudor Braniste

    2016-09-01

    Full Text Available Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle–cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial cells grown on surfaces functionalized with GaN nanoparticles demonstrated excellent adhesion and proliferation, suggesting good biocompatibility of the nanostructured GaN.

  16. Nanopipes in GaN: photo-etching and TEM study

    NARCIS (Netherlands)

    Lazar, S.; Weyher, J.L.; Macht, L.; Tichelaar, F.D.; Zandbergen, H.W.

    2004-01-01

    Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction co

  17. Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

    NARCIS (Netherlands)

    de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

    2014-01-01

    We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

  18. MBE Growth and Characterization of Zincblende GaN and GaN/AlN Structures

    Science.gov (United States)

    1997-07-15

    This Program includes fundamental studies of Molecular beam epitaxial ( MBE ) growth of GaN and its related alloys and heterostructures. In additions...physics of MBE growth , and the optical and electrical properties for GaN-based device application. 1

  19. CFD and reaction computational analysis of the growth of GaN by HVPE method

    Science.gov (United States)

    Kempisty, P.; Łucznik, B.; Pastuszka, B.; Grzegory, I.; Boćkowski, M.; Krukowski, S.; Porowski, S.

    2006-10-01

    GaCl synthesis reaction during hydride vapor phase epitaxy (HVPE) growth of GaN in horizontal flow reactor has been analyzed using computerized fluid dynamics (CFD) and molecular estimates of the reaction rates. Finite element code FIDAP (commercially available from Fluent Inc.) [Fidap User Manual, Fluent Inc. [1

  20. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

    Science.gov (United States)

    Shih, Cheng-Hung; Huang, Teng-Hsing; Schuber, Ralf; Chen, Yen-Liang; Chang, Liuwen; Lo, Ikai; Chou, Mitch Mc; Schaadt, Daniel M

    2011-06-15

    We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

  1. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

    Science.gov (United States)

    Reznik, R. R.; Kotlyar, K. P.; Ilkiv, I. V.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

    2016-08-01

    This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.

  2. Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, I.; Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vallon, S. [Corning European Technology Center, 7bis avenue de Valvins, 77210 Avon (France); Mayolet, A. [Corning Incorporated, SP-FR02-12, Corning, NY 14831 (United States)

    2010-02-15

    Solar modules made from thin-film crystalline-silicon layers of high quality on glass substrates could lower the price of photovoltaic electricity substantially. One way to create crystalline-silicon thin films on non-silicon substrates is to use the so-called ''seed layer approach'', in which a thin crystalline-silicon seed layer is first created, followed by epitaxial thickening of this seed layer. In this paper, we present the first solar cell results obtained on 10-{mu}m-thick monocrystalline-silicon (mono-Si) layers obtained by a seed layer approach on transparent glass-ceramic substrates. The seed layers were made using implant-induced separation and anodic bonding. These layers were then epitaxially thickened by thermal CVD. Simple solar cell structures without integrated light trapping features showed efficiencies of up to 7.5%. Compared to polycrystalline-silicon layers made by aluminum-induced crystallization of amorphous silicon and thermal CVD, the mono-Si layers have a much higher bulk diffusion lifetime. (author)

  3. Wafer bonding solution to epitaxial graphene-silicon integration

    Science.gov (United States)

    Dong, Rui; Guo, Zelei; Palmer, James; Hu, Yike; Ruan, Ming; Hankinson, John; Kunc, Jan; Bhattacharya, Swapan K.; Berger, Claire; de Heer, Walt A.

    2014-03-01

    A new strategy for the integration of graphene electronics with silicon complementary metal-oxide-semiconductor (Si-CMOS) technology is demonstrated that requires neither graphene transfer nor patterning. Inspired by silicon-on-insulator and three-dimensional device hyper-integration techniques, a thin monocrystalline silicon layer ready for CMOS processing is bonded to epitaxial graphene (EG) on SiC. The parallel Si and graphene electronic platforms are interconnected by metal vias. In this method, EG is grown prior to bonding so that the process is compatible with EG high temperature growth and preserves graphene integrity and nano-structuring.

  4. XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen [Surface Physics and Nanostructure Group, National Physical Laboratory, New Delhi 110012 (India); Department of Physics, Indian Institute of Technology, New Delhi 110016 (India); Kumar, Mahesh; Govind [Surface Physics and Nanostructure Group, National Physical Laboratory, New Delhi 110012 (India); Mehta, B.R. [Department of Physics, Indian Institute of Technology, New Delhi 110016 (India); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, International Center for Material Science and Chemistry and Physics Materials Unit, Jakkur, 560064 Bangalore, Karnataka (India)

    2009-10-30

    For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar{sup +} ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 x 10{sup 13} ions/cm{sup 2} to 1 x 10{sup 18} ions/cm{sup 2}. Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N{sub 2}{sup +} ions and 7.2 x 10{sup 17} ions/cm{sup 2} are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar{sup +} ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for

  5. Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LIU Zhan-Hui; XIU Xiang-Qan; YAN Huai-Yue; ZHANG Rong; XIE Zi-Li; HAN Ping; SHI Yi; ZHENG You-Dou

    2011-01-01

    @@ GaN nanowires are grown by hydride vapor phase epitaxy using nickel as a catalyst.The properties of the obtained GaN nanowires are characterized by scanning and transmission electron microscopy,electron diffraction,roomtemperature photoluminescence and energy dispersive spectroscopy.The results show that the nanowires are wurtzite single crystals growing along the[0001]direction and a redshift in the photoluminescence is observed due to a superposition of several effects.The Raman spectra are close to those of the bulk GaN and the significantly broadening of those modes indicates the phonon confinement effects associated with the nanoscale dimensions of the system.%GaN nanowires are grown by hydride vapor phase epitaxy using nickel as a catalyst. The properties of the obtained GaN nanowires are characterized by scanning and transmission electron microscopy, electron diffraction, room-temperature photoluminescence and energy dispersive spectroscopy. The results show that the nanowires are wurtzite single crystals growing along the [0001] direction and a redshift in the photoluminescence is observed due to a superposition of several effects. The Raman spectra are close to those of the bulk GaN and the significantly broadening of those modes indicates the phonon confinement effects associated with the nanoscale dimensions of the system.

  6. On the texturization of monocrystalline silicon with sodium carbonate solutions

    Energy Technology Data Exchange (ETDEWEB)

    Vallejo, B.; Gonzalez-Manas, M.; Martinez-Lopez, J.; Caballero, M.A. [Departamento de Cristalografia, Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real (Spain)

    2007-05-15

    The texturization of monocrystalline silicon wafers using sodium carbonate solution has been investigated. This etching process has been evaluated in terms of the surface morphology and the reflectance value. The results show that for low concentration of sodium carbonate the increase of texturing time decreases the reflectance value because of the change in morphology from hillocks to pyramidal; on the contrary for intermediate and high concentrations the increase of time has a detrimental effect on texturization because it increases both the pyramid sizes and their non-uniform distribution. However, a good cell performance could be obtained by etching at high concentrations and short times. (author)

  7. Critical impact of Ehrlich-Schwöbel barrier on GaN surface morphology during homoepitaxial growth

    Science.gov (United States)

    Kaufmann, Nils. A. K.; Lahourcade, L.; Hourahine, B.; Martin, D.; Grandjean, N.

    2016-01-01

    We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwöbel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.

  8. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

    Science.gov (United States)

    Hubbard, S. M.; Zhao, G.; Pavlidis, D.; Sutton, W.; Cho, E.

    2005-11-01

    High-resistance (HR) GaN templates for AlGaN/GaN heterojunction field effect transistor (HFET) applications were grown using organometallic vapor phase epitaxy. The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature and NL thickness. Using an annealing temperature of 1033 °C and NL thickness of 26 nm, GaN with sheet resistance of 10 10 Ω/sq was achieved, comparable to that of Fe-doped GaN. Material characterization results show that the high-resistance GaN is achieved due to compensating acceptor levels that may be introduced through edge-type threading dislocations. Optimization of annealing temperature and NL thickness provided a means to maximize GaN sheet resistance without significantly degrading material quality. In situ laser reflectance was used to correlate the NL properties to sheet resistance and material quality, providing a figure of merit for expected sheet resistance. AlGaN/GaN HFET layers grown using HR GaN templates with R of 10 10 Ω/sq gave surface and interface roughness of 14 and 7 Å, respectively. The 2DEG Hall mobility and sheet charge of HFETs grown using HR GaN templates was comparable to similar layers grown using unintentionally doped (UID) GaN templates.

  9. Role of lateral growth on the structural properties of high temperature GaN layer

    Institute of Scientific and Technical Information of China (English)

    GAO ZhiYuan; HAO Yue; LI PeiXian; ZHANG JinCheng

    2009-01-01

    The role of lateral growth on the structural properties of high temperature (HT) GaN epitaxial layer has been investigated by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD).Variations of the lateral growth rate of HT GaN in metal-organic chemical vapor deposition (MOCVD)can be obtained by changing the Ⅴ/Ⅲ ratio. It is found that under higher lateral growth rate, dislocation is easier to bend into subgrains away from c axis, and the position where bend occurs is closer to the buffer layer, however, dislocation density does not show to monotonically vary with increasing lateral growth rate. A model concerning the GaN growth dynamics and dislocation bending mechanics has been proposed to explain the correlation between lateral growth and the structural properties of GaN.

  10. In situ studies of the effect of silicon on GaN growth modes.

    Energy Technology Data Exchange (ETDEWEB)

    Munkholm, A.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Murty, M. V. R.; Thompson, C.; Fini, P.; Speck, J. S.; DenBaars, S. P.; Northern Illinois Univ.; Univ. of California at Santa Barbara

    2000-12-01

    We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10{sup -18} cm{sup 2}/s at 810{sup o}C.

  11. Role of lateral growth on the structural properties of high temperature GaN layer

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The role of lateral growth on the structural properties of high temperature(HT) GaN epitaxial layer has been investigated by means of transmission electron microscopy(TEM) and X-ray diffraction(XRD).Variations of the lateral growth rate of HT GaN in metal-organic chemical vapor deposition(MOCVD) can be obtained by changing the V/Ⅲ ratio.It is found that under higher lateral growth rate,dislocation is easier to bend into subgrains away from c axis,and the position where bend occurs is closer to the buffer layer,however,dislocation density does not show to monotonically vary with increasing lateral growth rate.A model concerning the GaN growth dynamics and dislocation bending mechanics has been proposed to explain the correlation between lateral growth and the structural properties of GaN.

  12. Droplet heteroepitaxy of zinc-blende vs. wurtzite GaN quantum dots

    Science.gov (United States)

    Reese, C.; Jeon, S.; Hill, T.; Jones, C.; Shusterman, S.; Yacoby, Y.; Clarke, R.; Deng, H.; Goldman, Rs

    We have developed a GaN droplet heteroepitaxy process based upon plasma-assisted molecular-beam epitaxy. Using various surface treatments and Ga deposition parameters, we have demonstrated polycrystalline, zinc-blende (ZB), and wurtzite (WZ) GaN quantum dots (QDs) on Si(001), r-Al2O3, Si(111), and c-GaN substrates. For the polar substrates (i.e. Si(111) and c-GaN), high-resolution transmission electron microscopy and coherent Bragg rod analysis reveals the formation of coherent WZ GaN QDs with nitridation-temperature-dependent sizes and densities. For the non-polar substrates (i.e. Si(001) and r-Al2O3) , QDs with strong near-band photoluminescence emission are observed and ZB GaN QD growth on Si(001) is demonstrated for the first time.

  13. Mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus

    Science.gov (United States)

    Cao, Pinqiang; Wu, Jianyang; Zhang, Zhisen; Ning, Fulong

    2017-01-01

    The mechanical properties of monocrystalline and polycrystalline monolayer black phosphorus (MBP) are systematically investigated using classic molecular dynamic simulations. For monocrystalline MBP, it is found that the shear strain rate, sample dimensions, temperature, atomic vacancies and applied statistical ensemble affect the shear behaviour. The wrinkled morphology is closely connected with the direction of the in-plane shear, dimensions of the samples, and applied ensembles. Particularly, small samples subjected to loading/unloading of the shear deformation along the armchair direction demonstrate a clear mechanical hysteresis loop. For polycrystalline MBP, the maximum shear stress as a function of the average grain size follows an inverse pseudo Hall-Petch type relationship under an isothermal-isobaric (NPT) ensemble, whereas under a canonical (NVT) ensemble, the maximum shear stress of polycrystalline MBP exhibits a ‘flipped’ behaviour. Furthermore, polycrystalline MBP subjected to uniaxial tension also exhibits a strongly grain size-dependent mechanical response, and it can fail by brittle intergranular and transgranular fractures because of its weaker grain boundary structures and the direction-dependent edge energy, respectively. These findings provide useful insight into the mechanical design of BP for nanoelectronic devices.

  14. High frequency guided wave propagation in monocrystalline silicon wafers

    Science.gov (United States)

    Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

    2017-04-01

    Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

  15. GaN quantum dot polarity determination by X-ray photoelectron diffraction

    Science.gov (United States)

    Romanyuk, O.; Bartoš, I.; Brault, J.; Mierry, P. De; Paskova, T.; Jiříček, P.

    2016-12-01

    Growth of GaN quantum dots (QDs) on polar and semipolar GaN substrates is a promising technology for efficient nitride-based light emitting diodes (LED). The QDs crystal orientation typically repeats the polarity of the substrate. In case of non-polar or semipolar substrates, the polarity of QDs is not obvious. In this article, the polarity of GaN QDs and of underlying layers was investigated nondestructively by X-ray photoelectron diffraction (XPD). Polar and semipolar GaN/Al0.5Ga0.5N heterostructures were grown on the sapphire substrates with (0001) and (1 1 bar 00) orientations by molecular beam epitaxy (MBE). Polar angle dependence of N 1s core-level photoelectron intensities were measured from GaN QDs and compared with the corresponding experimental curves from free-standing GaN crystals. It is confirmed experimentally, that the crystalline orientation of polar (0001) GaN QDs follows the orientation of the (0001) sapphire substrate. In case of semipolar GaN QDs grown on (1 1 bar 00) sapphire substrate, the (11 2 bar 2) polarity of QDs was determined.

  16. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

    Science.gov (United States)

    Lemettinen, J.; Kauppinen, C.; Rudzinski, M.; Haapalinna, A.; Tuomi, T. O.; Suihkonen, S.

    2017-04-01

    We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon-on-insulator (SOI) substrate compared to a bulk silicon (Si) substrate. GaN layers were grown by metal–organic vapor phase epitaxy on 6-inch bulk Si and SOI wafers using the standard step graded AlGaN and AlN approach. The GaN layers grown on SOI exhibited lower strain according to x-ray diffraction analysis. Defect selective etching measurements suggested that the use of SOI substrate for GaN epitaxy reduces the dislocation density approximately by a factor of two. Furthermore, growth on SOI substrate allows one to use a significantly thinner AlGaN buffer compared to bulk Si. Synchrotron radiation x-ray topography analysis confirmed that the stress relief mechanism in GaN on SOI epitaxy is the formation of a dislocation network to the SOI device Si layer. In addition, the buried oxide layer significantly improves the vertical leakage characteristics as the onset of the breakdown is delayed by approximately 400 V. These results show that the GaN on the SOI platform is promising for power electronics applications.

  17. Surface chemistry and electronic structure of nonpolar and polar GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

    2015-08-01

    Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

  18. Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

    Science.gov (United States)

    Svensk, O.; Ali, M.; Riuttanen, L.; Törmä, P. T.; Sintonen, S.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

    2013-05-01

    In this paper we report on the MOCVD growth and characterization of GaN structures and InGaN single quantum wells grown on pillar patterned GaN/sapphire templates. During the regrowth a network of voids was intentionally formed at the interface of sapphire substrate and GaN epitaxial layer. The regrowth process was found to decrease the threading dislocation density of the overgrown layer. The quantum well sample grown on patterned template showed significantly higher optical output in photoluminescence measurements compared to the reference sample with identical internal quantum efficiency characteristics. We attribute the increase to enhanced light extraction efficiency caused by strong scattering and redirection of light from the scattering elements.

  19. Ultrasmooth, Highly Spherical Monocrystalline Gold Particles for Precision Plasmonics

    KAUST Repository

    Lee, You-Jin

    2013-12-23

    Ultrasmooth, highly spherical monocrystalline gold particles were prepared by a cyclic process of slow growth followed by slow chemical etching, which selectively removes edges and vertices. The etching process effectively makes the surface tension isotropic, so that spheres are favored under quasi-static conditions. It is scalable up to particle sizes of 200 nm or more. The resulting spherical crystals display uniform scattering spectra and consistent optical coupling at small separations, even showing Fano-like resonances in small clusters. The high monodispersity of the particles we demonstrate should facilitate the self-assembly of nanoparticle clusters with uniform optical resonances, which could in turn be used to fabricate optical metafluids. Narrow size distributions are required to control not only the spectral features but also the morphology and yield of clusters in certain assembly schemes. © 2013 American Chemical Society.

  20. Mechanically flexible optically transparent porous mono-crystalline silicon substrate

    KAUST Repository

    Rojas, Jhonathan Prieto

    2012-01-01

    For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

  1. Structural features in GaN grown on a Ge(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y.; McAleese, C.; Xiu, H.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge (United Kingdom); Lieten, R.R.; Degroote, S.; Borghs, G. [Interuniversity Microelectronics Center, Leuven (Belgium)

    2008-07-01

    Using electron microscopy, structural characterisation has been carried out on a GaN epilayer grown directly on a Ge(111) substrate using plasma assisted molecular beam epitaxy (PAMBE) without any intermediate buffer layers. It was determined that a defect with a triangular shape, initially observed with optical microscopy, is essentially a faceted void in the Ge extending from the interface into the substrate. Both hexagonal and cubic phase GaN were observed in the epilayer which may be due to temperature variation during growth. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers.

    Science.gov (United States)

    Henneghien, Anne-Line; Tourbot, Gabriel; Daudin, Bruno; Lartigue, Olivier; Désières, Yohan; Gérard, Jean-Michel

    2011-01-17

    The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.

  3. The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Shih

    2014-12-01

    Full Text Available We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (000 1 ̄ by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112 orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112 film on N-polar GaN. Microstructure analysis of the CuInSe2  showed that the large lattice mismatch (28.5% between CuInSe2  and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.

  4. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates

    OpenAIRE

    M. Niehle; Trampert, A; Albert, S; Bengoechea-Encabo, A.; Calleja, E.

    2015-01-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 ) substrate surface by molecular beam epitaxy. For the pract...

  5. Gallium nitride epitaxy on silicon: Importance of substrate preparation

    Energy Technology Data Exchange (ETDEWEB)

    Martin, G.A.; Sverdlov, B.N.; Botchkarev, A.; Morkoc, H.; Thompson, W.H.; Nayfeh, M.H. [Univ. of Illinois, Urbana, IL (United States); Smith, D.J.; Tsen, S.C.Y. [Arizona State Univ., Tempe, AZ (United States)

    1996-11-01

    Hexagonal GaN films grown on non-isomorphic substrates are usually characterized by numerous threading defects which are essentially boundaries between wurtzite GaN domains where the stacking sequences do not align. One origin of these defects is irregularities on the substrate surface such as surface steps. Using Si <111> substrates and a substrate preparation procedure that makes wide atomically flat terraces, the authors demonstrate that reduction of these irregularities greatly improves the crystalline and luminescent quality of GaN films grown by plasma-enhanced molecular beam epitaxy. X-ray rocking curve width decreases from over 1 degree to less than 20 minutes, while PL halfwidth decreases from over 15 meV to less than 10 meV.

  6. Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer

    Science.gov (United States)

    Wang, Hongbo; Daigo, Yoshiaki; Seino, Takuya; Ishibashi, Sotaro; Sugiyama, Masakazu

    2016-10-01

    GaN epitaxy was explored on a cone-patterned sapphire substrate with an ex situ AlN seed layer prepared by physical vapor deposition (PVD). The effect of initial growth on the quality of the GaN epilayer was investigated using both ex situ PVD-AlN seed layers with various thicknesses and various deposition parameters such as temperature and reactor pressure in metal-organic vapor-phase epitaxy (MOVPE). It was found that the quality of GaN is insensitive to both the thickness of the ex situ PVD-AlN seed layer and the MOVPE growth conditions. A high-quality GaN film was realized, as indicated by room-temperature CL mapping (dark spot density of 1.6 × 108 cm-2), on a patterned sapphire substrate with a wide growth condition window by simply employing an ex situ PVD-AlN seed layer.

  7. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád;

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer,...

  8. Development of brazing foils to join monocrystalline tungsten alloys with ODS-EUROFER steel

    Energy Technology Data Exchange (ETDEWEB)

    Kalin, B.A. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation)]. E-mail: BAKalin@mephi.ru; Fedotov, V.T. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Sevrjukov, O.N. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Kalashnikov, A.N. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Suchkov, A.N. [Moscow Engineering Physics Institute (State University), 31 Kashirskoye Sh., Moscow 115409 (Russian Federation); Moeslang, A. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, 76021 Karlsruhe (Germany); Rohde, M. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, 76021 Karlsruhe (Germany)

    2007-08-01

    Results on rapidly solidified filler metals for brazing W with W and monocrystalline W with EUROFER steel (FS) are presented. Rapidly quenched powder-type filler metals based on Ti{sub bal}-V-Cr-Be were developed to braze polycrystalline W with monocrystalline W. In addition, Fe{sub bal}-Ta-Ge-Si-B-Pd alloys were developed to braze monocrystalline W with FS for helium gas cooled divertors and plasma-facing components. The W to FS brazed joints were fabricated under vacuum at 1150 {sup o}C, using a Ta spacer of 0.1 mm in thickness to account for the different thermal expansions. The monocrystalline tungsten as well as the related brazed joints withstood 30 cycles between 750 {sup o}C/20 min and air cooling/3-5 min.

  9. Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

    Energy Technology Data Exchange (ETDEWEB)

    Visconti, P.; Huang, D.; Reshchikov, M.A.; Yun, F.; Cingolani, R.; Smith, D.J.; Jasinski, J.; Swider, W.; Liliental-Weber, Z.; Morkoc, H.

    2002-04-08

    The availability of reliable and quick methods to determine defect density and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching using H{sub 3}PO{sub 4} and molten KOH to estimate the defect density in GaN films grown by hydride vapor phase epitaxy (HVPE) and molecular beam epitaxy (MBE). Free-standing whiskers and hexagonal etch pits are formed by PEC and wet etching respectively. Using Atomic Force Microscopy (AFM), we found the whisker density to be similar to etch pit densities for samples etched under precise conditions. Additionally Transmission Electron Microscopy (TEM) observations confirmed dislocation densities obtained by etching which increased our confidence in the consistency of methods used. Hot wet etching was used also to investigate the polarity of GaN films together with Convergent Beam Electron Diffraction (CBED) and AFM imaging. We found that hot H{sub 3}PO{sub 4} etches N-polarity GaN films very quickly resulting in the complete removal or drastic change of surface morphology as revealed by AFM or optical microscopy. On the contrary, the acid attacks only defect sites in Ga-polarity films producing nanometer-scale pits but leaving the defect-free GaN intact and the morphology unchanged. Additionally, the polarity assignments were related to the as-grown morphology and to the growth conditions of the buffer layer and the subsequent GaN layer.

  10. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Krueger, J.; Kisielowski, C. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  11. GaN nanocolumns grown on Si(111) by plasma-assisted MBE: Correlation of structural and optical properties with growth parameters.

    OpenAIRE

    Fernandez-Garrido, S.; Grandal, J.; Lefebvre, Pierre; Sanchez-Garcia, M. A.; Calleja, E.

    2010-01-01

    International audience; The morphology and low-temperature photoluminescence spectra of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) were systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730-850ºC). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth condition...

  12. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

    Institute of Scientific and Technical Information of China (English)

    XING Zhi-Gang; WANG Jing; PEI Xiao-Jiang; WAN Wei; CHEN Hong; ZHOU Jun-Ming

    2007-01-01

    @@ By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci.Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.

  13. Strain-induced step bunching in orientation-controlled GaN on Si

    Science.gov (United States)

    Narita, Tetsuo; Iguchi, Hiroko; Horibuchi, Kayo; Otake, Nobuyuki; Hoshi, Shinichi; Tomita, Kazuyoshi

    2016-05-01

    We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390‧‧ and 550‧‧ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

  14. Combined Ultrasonic Elliptical Vibration and Chemical Mechanical Polishing of Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Liu Defu

    2016-01-01

    Full Text Available An ultrasonic elliptical vibration assisted chemical mechanical polishing(UEV-CMP is employed to achieve high material removal rate and high surface quality in the finishing of hard and brittle materials such as monocrystalline silicon, which combines the functions of conventional CMP and ultrasonic machining. In theultrasonic elliptical vibration aided chemical mechanical polishingexperimental setup developed by ourselves, the workpiece attached at the end of horn can vibrate simultaneously in both horizontal and vertical directions. Polishing experiments are carried out involving monocrystalline silicon to confirm the performance of the proposed UEV-CMP. The experimental results reveal that the ultrasonic elliptical vibration can increase significantly the material removal rate and reduce dramatically the surface roughness of monocrystalline silicon. It is found that the removal rate of monocrystalline silicon polished by UEV-CMP is increased by approximately 110% relative to that of conventional CMP because a passive layer on the monocrystalline silicon surface, formed by the chemical action of the polishing slurry, will be removed not only by the mechanical action of CMP but also by ultrasonic vibration action. It indicates that the high efficiency and high quality CMP of monocrystalline silicon can be performed with the proposed UEV-CMP technique.

  15. Large-area monocrystalline silicon thin films by annealing of macroporous arrays: Understanding and tackling defects in the material

    Science.gov (United States)

    Depauw, Valérie; Gordon, Ivan; Beaucarne, Guy; Poortmans, Jef; Mertens, Robert; Celis, Jean-Pierre

    2009-08-01

    A concept that could provide a thin monocrystalline-silicon absorber layer without resorting to the expensive step of epitaxy would be very appealing for reducing the cost of solar cells. The empty-space-in-silicon technique by which thin films of silicon can be formed by reorganization of regular arrays of cylindrical voids at high temperature may be such a concept if the high quality of the thin film could be ensured on centimeter-large areas. While previous works mainly investigated the influence of the porous array on the final structure, this work focuses on the practical aspects of the high-temperature step and its application to large areas. An insight into the defects that may form is given and the origin of these defects is discussed, providing recommendations on how to avoid them. Surface roughening, pitting, formation of holes, and silicon pillars could be attributed to the nonuniform reactions between Si, SiO2, and SiO. Hydrogen atmospheres are therefore preferred for reorganization of macroporous arrays. Argon atmospheres, however, may provide high-quality silicon thin films as well, possibly even more easily transferable, as long as annealing is performed in controlled, clean, and oxygen-free conditions. Our experiments on large areas also highlight the importance of kinetics, which had not been considered up to now and which will require further understanding to ensure a complete reorganization over any wafer area.

  16. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    Science.gov (United States)

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  17. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  18. First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

    Science.gov (United States)

    Sekiguchi, K.; Shirakawa, H.; Yamamoto, Y.; Araidai, M.; Kangawa, Y.; Kakimoto, K.; Shiraishi, K.

    2017-06-01

    We analyzed the decomposition mechanisms of trimethylgallium (TMG) used for the gallium source of GaN fabrication based on first-principles calculations and thermodynamic analysis. We considered two conditions. One condition is under the total pressure of 1 atm and the other one is under metal organic vapor phase epitaxy (MOVPE) growth of GaN. Our calculated results show that H2 is indispensable for TMG decomposition under both conditions. In GaN MOVPE, TMG with H2 spontaneously decomposes into Ga(CH3) and Ga(CH3) decomposes into Ga atom gas when temperature is higher than 440 K. From these calculations, we confirmed that TMG surely becomes Ga atom gas near the GaN substrate surfaces.

  19. Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 常昕; 黎子兰; 杨志坚; 张国义; 章蓓

    2003-01-01

    High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3) and molten KOH exhibit notably different, etching pit densities of 5 × 108/cm2 and 4 × 107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.

  20. Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN

    Science.gov (United States)

    Suzuki, Mio; Sato, T.; Suemasu, T.; Hasegawa, F.

    2004-09-01

    In order to investigate possibility of thick GaN growth on a GaAs substrate by halide vapar phase epitaxy (HVPE), GaN was grown on GaAs(111)/Ti wafer with Ti deposited by E-gun. It was found that surface treatment of the GaAs substrate by HF solution deteriorated greatly the tolerence of GaAs and that Ti can protected GaAs from erosion by NH3. By depositing Ti on GaAs(111)A surface, a millor-like GaN layer could be grown at 1000 °C for 1 hour without serious deterioration of the original GaAs substrate. By increasing the growth rate, a thick free standing GaN will be obtained with GaAs as an original substrate in near future.

  1. Plasma-assisted MBE growth of GaN on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Sobanska, M.; Klosek, K.; Zytkiewicz, Z.R.; Borysiuk, J.; Witkowski, B.S.; Lusakowska, E.; Reszka, A.; Jakiela, R. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)

    2012-03-15

    In this work we present details of growth of GaN epitaxial layers on Si(111) substrates by molecular beam epitaxy (MBE) with the use of RF nitrogen plasma source. We focus on preparation of silicon substrate before the growth, on procedure of AlN buffer growth initiation (aluminum or nitrogen first) and on influence of III/N ratio on structural properties of the layers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. New design of nozzle structures and its effect on the surface and crystal qualities of thick GaN using a horizontal HVPE reactor

    Energy Technology Data Exchange (ETDEWEB)

    Wu Jiejun [Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)], E-mail: wujiejun@opt.elec.mie-u.ac.jp; Zhao Lubing; Wen Dongyuan; Xu Ke; Yang Zhijian; Zhang Guoyi [Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Li Hui; Zuo Ran [School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2009-03-15

    High-quality thick GaN films without cracks were achieved by using a new nozzle structure in the reactor grown by the hydride vapor phase epitaxy on sapphire substrates. Optical contrast microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray double diffraction (XRD) and cathodoluminescence (CL) were carried out to reveal the surface, crystal and optical properties of the GaN epilayer. It was found that the nozzle structure in the reactor has a large effect on the growth rate, surface flat, crystal quality, and the uniformity of the growth. Compared with the old one, the new nozzle structure (denoted as multi-layers nozzle) can improve dramatically the properties of thick GaN. Mirror, colorless and flat GaN thick film was obtained and its (0 0 0 2) FWHM results were reduced from 1000 to 300 arcsec when the new nozzle was used. AFM result revealed a step flow growth mode for GaN layer with the new nozzle. Room-temperature CL spectra on the GaN films showed a strong near-band-edge peak for the new nozzle, but there is only weak emitting peak for the old nozzle. New nozzle structure can improve the uniform of flow field near the surface of substrates compared with the old one, which leads to the improvement of properties of GaN thick film by hydride vapor phase epitaxy (HVPE)

  3. Formation of aligned CrN nanoclusters in Cr-delta-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Y K; Kimura, S; Emura, S; Hasegawa, S; Asahi, H [Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)], E-mail: zhou21@sanken.osaka-u.ac.jp

    2009-02-11

    Cr-delta-doped GaN layers were grown by radio-frequency plasma-assisted molecular-beam epitaxy on GaN template substrates. Cr flux was supplied without nitrogen flow during Cr-delta-doping. Cr incorporation into a narrow thin layer region was confirmed with the depth profile measured by secondary ion mass spectrometry. Structural properties and Cr atom alignments were studied with transmission electron microscopy. It was found that Cr-delta-doped GaN layers were coherently grown with Cr or CrGa nanoclusters in the delta-doped region for low temperature growth (350, 500 deg. C). It was also found that aligned CrN nanoclusters (approximately 5 nm vertical thickness) with NaCl-type structure were formed in the delta-doped region for the growth at 700 deg. C.

  4. The pyroelectric coefficient of free standing GaN grown by HVPE

    Science.gov (United States)

    Jachalke, Sven; Hofmann, Patrick; Leibiger, Gunnar; Habel, Frank S.; Mehner, Erik; Leisegang, Tilmann; Meyer, Dirk C.; Mikolajick, Thomas

    2016-10-01

    The present study reports on the temperature dependent pyroelectric coefficient of free-standing and strain-free gallium nitride (GaN) grown by hydride vapor phase epitaxy (HVPE). The Sharp-Garn method is applied to extract the pyroelectric coefficient from the electrical current response of the crystals subjected to a sinusoidal temperature excitation in a range of 0 °C to 160 °C. To avoid compensation of the pyroelectric response by an internal conductivity, insulating GaN crystals were used by applying C, Mn, and Fe doping during HVPE growth. The different pyroelectric coefficients observed at room temperature due to the doping correlate well with the change of the lattice parameter c. The obtained data are compared to previously published theoretical and experimental values of thin film GaN and discussed in terms of a strained lattice.

  5. Self-induced growth of vertical GaN nanowires on silica

    Science.gov (United States)

    Kumaresan, V.; Largeau, L.; Oehler, F.; Zhang, H.; Mauguin, O.; Glas, F.; Gogneau, N.; Tchernycheva, M.; Harmand, J.-C.

    2016-04-01

    We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.

  6. A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation

    Science.gov (United States)

    Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

    2017-09-01

    In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to hydrogenation. GaN NRs were selectively grown on a patterned Ti/Si(111) substrate using plasma-assisted molecular beam epitaxy, and the effect of hydrogenation on their optical properties was investigated in detail using low-temperature photoluminescence measurements. Due to hydrogenation, the emissions corresponding to the donor-acceptor pair and yellow luminescence in GaN NRs were strongly suppressed, while the emission corresponding to the neutral to donor bound exciton (D0X) exhibited red-shift. Thermal annealing of hydrogenated GaN NRs demonstrated the recovery of the D0X and deep level emission. To determine the nature of the D0X peak shift due to hydrogenation, comparative studies were carried out on various diameters of GaN NRs, which can be controlled by different growth conditions and wet-etching times. Our experimental results reveal that the D0X shift depends on the diameter of the GaN NRs after hydrogenation. The results clearly demonstrate that the hydrogenation leads to band bending of GaN NRs as compensated by hydrogen ions, which causes a red-shift in the D0X emission.

  7. Femtosecond laser direct writing of monocrystalline hexagonal silver prisms

    Energy Technology Data Exchange (ETDEWEB)

    Vora, Kevin; Kang, SeungYeon; Moebius, Michael [School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States); Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States); Department of Physics, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138 (United States)

    2014-10-06

    Bottom-up growth methods and top-down patterning techniques are both used to fabricate metal nanostructures, each with a distinct advantage: One creates crystalline structures and the other offers precise positioning. Here, we present a technique that localizes the growth of metal crystals to the focal volume of a laser beam, combining advantages from both approaches. We report the fabrication of silver nanoprisms—hexagonal nanoscale silver crystals—through irradiation with focused femtosecond laser pulses. The growth of these nanoprisms is due to a nonlinear optical interaction between femtosecond laser pulses and a polyvinylpyrrolidone film doped with silver nitrate. The hexagonal nanoprisms have bases hundreds of nanometers in size and the crystal growth occurs over exposure times of less than 1 ms (8 orders of magnitude faster than traditional chemical techniques). Electron backscatter diffraction analysis shows that the hexagonal nanoprisms are monocrystalline. The fabrication method combines advantages from both wet chemistry and femtosecond laser direct-writing to grow silver crystals in targeted locations. The results presented in this letter offer an approach to directly positioning and growing silver crystals on a substrate, which can be used for plasmonic devices.

  8. Femtosecond laser direct writing of monocrystalline hexagonal silver prisms

    Science.gov (United States)

    Vora, Kevin; Kang, SeungYeon; Moebius, Michael; Mazur, Eric

    2014-10-01

    Bottom-up growth methods and top-down patterning techniques are both used to fabricate metal nanostructures, each with a distinct advantage: One creates crystalline structures and the other offers precise positioning. Here, we present a technique that localizes the growth of metal crystals to the focal volume of a laser beam, combining advantages from both approaches. We report the fabrication of silver nanoprisms—hexagonal nanoscale silver crystals—through irradiation with focused femtosecond laser pulses. The growth of these nanoprisms is due to a nonlinear optical interaction between femtosecond laser pulses and a polyvinylpyrrolidone film doped with silver nitrate. The hexagonal nanoprisms have bases hundreds of nanometers in size and the crystal growth occurs over exposure times of less than 1 ms (8 orders of magnitude faster than traditional chemical techniques). Electron backscatter diffraction analysis shows that the hexagonal nanoprisms are monocrystalline. The fabrication method combines advantages from both wet chemistry and femtosecond laser direct-writing to grow silver crystals in targeted locations. The results presented in this letter offer an approach to directly positioning and growing silver crystals on a substrate, which can be used for plasmonic devices.

  9. Surface Damage Mechanism of Monocrystalline Si Under Mechanical Loading

    Science.gov (United States)

    Zhao, Qingliang; Zhang, Quanli; To, Suet; Guo, Bing

    2017-03-01

    Single-point diamond scratching and nanoindentation on monocrystalline silicon wafer were performed to investigate the surface damage mechanism of Si under the contact loading. The results showed that three typical stages of material removal appeared during dynamic scratching, and a chemical reaction of Si with the diamond indenter and oxygen occurred under the high temperature. In addition, the Raman spectra of the various points in the scratching groove indicated that the Si-I to β-Sn structure (Si-II) and the following β-Sn structure (Si-II) to amorphous Si transformation appeared under the rapid loading/unloading condition of the diamond grit, and the volume change induced by the phase transformation resulted in a critical depth (ductile-brittle transition) of cut (˜60 nm ± 15 nm) much lower than the theoretical calculated results (˜387 nm). Moreover, it also led to abnormal load-displacement curves in the nanoindentation tests, resulting in the appearance of elbow and pop-out effects (˜270 nm at 20 s, 50 mN), which were highly dependent on the loading/unloading conditions. In summary, phase transformation of Si promoted surface deformation and fracture under both static and dynamic mechanical loading.

  10. Controlled growth of hexagonal GaN pyramids and InGaN QDs

    OpenAIRE

    Lundskog, Anders

    2012-01-01

    Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. However, today’s planar hetero epitaxial grown LEDs  structures contain an unavoidable number of dislocations, which serves as non-radiative recombination centers. The dislocations harm the luminous efficiency ...

  11. Evaluation of freestanding GaN as an alpha and neutron detector

    Energy Technology Data Exchange (ETDEWEB)

    Mulligan, Padhraic; Wang, Jinghui; Cao, Lei, E-mail: cao.152@osu.edu

    2013-08-11

    The wide bandgap (3.39) eV and large dislocation energy of the III–V semiconductor gallium nitride (GaN) make this a desirable material for charged particle spectroscopy in high temperature, high radiation environments. While other research groups have established that charged particle detectors can be fabricated from high quality, thin films of molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) grown GaN, this work demonstrates the feasibility of ionizing radiation detectors created from significantly thicker freestanding n-type GaN, grown via hydride vapor phase epitaxy (HVPE). Detectors were fabricated by depositing Ni/Au pads on n-type GaN, forming a Schottky barrier diode. Capacitance–voltage measurements on the detectors showed an intrinsic carrier concentration in the range of 10{sup −16} cm{sup −3}–10{sup –15} cm{sup −3}, and indicated an inhomogeneous distribution between diodes on the same wafer. The radiation sensitivity of the fabricated detectors was analyzed using alpha particles from an {sup 241}Am source. Charge collection efficiency (CCE) calculations from these experiments indicate an efficiency of 100 percent. The detectors were also successfully used to detect neutron induced charged particles using a Li{sub 2}O foil in a neutron beam.

  12. A Power Case Study for Monocrystalline and Polycrystalline Solar Panels in Bursa City, Turkey

    Directory of Open Access Journals (Sweden)

    Ayşegül Taşçıoğlu

    2016-01-01

    Full Text Available It was intended to reveal the time dependent power generation under different loads for two different solar panels under the conditions of Bursa province in between August 19 and 25, 2014. The testing sets include solar panels, inverter, multimeter, accumulator, regulator, pyranometer, pyrheliometer, temperature sensor, and datalogger. The efficiency of monocrystalline and polycrystalline solar panels was calculated depending on the climatic data’s measurements. As the result of the study, the average performances of monocrystalline and polycrystalline panels are 42.06 and 39.80 Wh, respectively. It was seen that 87.14 W instantaneous power could be obtained from monocrystalline solar panel and that 80.17 W instantaneous power could be obtained from polycrystalline solar panel under maximum total radiation (1001.13 W/m2. Within this frame, it was determined that monocrystalline solar panel is able to operate more efficiently under the conditions of Bursa compared to polycrystalline solar panel. When the multivariate correlations coefficients were examined statistically, a significant relationship in positive direction was detected between total and direct radiation and ambient temperature on energy generation from monocrystalline and polycrystalline panel.

  13. Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

    Science.gov (United States)

    Leach, J. H.; Biswas, N.; Paskova, T.; Preble, E. A.; Evans, K. R.; Wu, M.; Ni, X.; Li, X.; Özgür, Ü.; Morkoç, H.

    2011-02-01

    Bulk GaN substrates promise to bring the full potential of nitride-based devices to bear since they offer a low thermal and lattice mismatched alternative to foreign substrates for epitaxial growth. However, due to the high cost and low availability of bulk GaN substrates, effects such as surface misorientation (offcut), surface polishing, and preparation of such substrates on subsequent epitaxy are still not well understood. As such, AlGaN/GaN heterostructures with nominal Al compositions of 25% were grown by MOCVD on semi-insulating bulk GaN substrates with offcuts ranging from 0.05 to 1.95° in the m-direction (10 10) to attempt to determine the optimal offcut for bulk GaN substrates for AlGaN-based HFET devices. X-ray diffraction (XRD) studies indicate that the Al composition does not vary with offcut, however reciprocal space mapping shows evidence of strain relaxation of the AlGaN in samples grown on substrates with offcut >1.1°. Additionally, we observed a minimum in sheet resistance of the 2DEGs for substrates with offcuts near 0.5°, arising from higher mobilities in these samples. Evidence of an optimal substrate misorientation is important for AlGaN-based devices grown on bulk GaN substrates.

  14. A simple method to control nanotribology behaviors of monocrystalline silicon

    Science.gov (United States)

    Wang, X. D.; Guo, J.; Chen, C.; Chen, L.; Qian, L. M.

    2016-01-01

    A simple method was proposed to control the nanotribology behaviors of monocrystalline silicon against SiO2 microsphere by adjusting relative humidity (RH). Experimental results indicated that adhesion work, friction coefficient, and nanowear of silicon against SiO2 microsphere significantly varied between 60% and 90% RH. Under 60% RH, adhesion work was 119 mN/m, and friction coefficient was about 0.53. However, adhesion work and friction coefficient decreased to ˜70 mN/m and ˜0.3 under 90% RH, respectively. An apparent wear track ˜13 nm deep formed on the silicon surface under 60% RH, whereas no obvious wear scar was observed on the silicon surface under 90% RH. Analysis indicated that such tribological behaviors were due to different water condensations on the silicon surface under 60% and 90% RH. Under 60% RH, the water that condensed on the surfaces of the silicon sample and SiO2 tip mainly consisted of ice-like water. As a result, adhesion work was enlarged by the breaking force of the ice-like water bridge in the contact area. Given that a ≡Si-O-Si≡ bonding bridge easily formed between the silicon surface and the SiO2 tip with the help of water condensation under 60% RH instead of 90% RH, the friction coefficient was large and the nanowear of the silicon sample was severe under 60% RH. These results may help elucidate the nanotribology behaviors of silicon and facilitate the tribological design of dynamic microelectromechanical systems working under humid conditions.

  15. Gallium Metal Nanoparticles for Plasmonics and Droplet Epitaxy: Formation and Properties

    Science.gov (United States)

    Jeon, Sunyeol

    The development of new materials in nanophotonics, defined as the use of multiscale materials to control light-matter interactions, has proven to be the foundation for revolutionary advances in both science and technology. In this thesis, we utilize Ga droplets as a plasmonic metal nanoparticle (NP) as well as a seed for droplet epitaxy of ZB GaN nanostructures, and examine the formation of embedded GaAs:Ga nanocomposites and ZB GaN nanostructures, and their structural and optical properties. Metallic nanostructures generate surface plasmons an incident electromagnetic wave, leading to enhancements in absorption and emission. However, materials research and device fabrication have focused nearly exclusively on 2-dimensional dispersions of Ag and Au formed on surfaces, with plasmon resonances limited to visible wavelengths. Thus, it is necessary to explore a new plasmonic materials, which cover wide wavelength ranges. Here, we examined the formation of embedded Ga NP arrays and their influence on GaAs NBE PL efficiency using ion beams and molecular beam epitaxy. Using a combined computational-experimental approach, we revealed new insight into the influence of the embedded NPs on the PL of GaAs. This approach provides an opportunity to enhance the PL efficiency from a variety of semiconductor heterostructures, using a seamless approach to embed non-noble metals during epitaxy. GaN is of interest for optoelectronic applications. However, GaN typically crystallizes in a WZ structure, exhibiting piezoelectric properties leading to a reduced probability for recombination of electrons and holes and consequently limit the performance of devices. Thus, interest in polarization-free ZB GaN nanostructures is rapidly increasing. In this thesis, we first demonstrate the growths of ZB GaN nanostructures via DE. By varying the surface conditions of substrates and nitridation processes, GaN QDs were grown polycrystalline, WZ, and ZB. Furthermore, we examined the growth of ZB

  16. Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Enyu Wang

    2016-01-01

    Full Text Available At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

  17. Ultra High p-doping Material Research for GaN Based Light Emitters

    Energy Technology Data Exchange (ETDEWEB)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  18. Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis

    Science.gov (United States)

    Unni, Vineet; Sankara Narayanan, E. M.

    2017-04-01

    This is the first report on the numerical analysis of the performance of nanoscale vertical superjunction structures based on impurity doping and an innovative approach that utilizes the polarisation properties inherent in III–V nitride semiconductors. Such nanoscale vertical polarisation super junction structures can be realized by employing a combination of epitaxial growth along the non-polar crystallographic axes of Wurtzite GaN and nanolithography-based processing techniques. Detailed numerical simulations clearly highlight the limitations of a doping based approach and the advantages of the proposed solution for breaking the unipolar one-dimensional material limits of GaN by orders of magnitude.

  19. Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Aniruddha; Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@umich.edu [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2016-01-25

    We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

  20. Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

    Science.gov (United States)

    Bhattacharya, Aniruddha; Baten, Md Zunaid; Bhattacharya, Pallab

    2016-01-01

    We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

  1. A study on the key factors affecting the electronic properties of monocrystalline silicon solar cells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; CHEN Yong-min; LI Li; LI Fei; ZHAO Bao-xing

    2009-01-01

    The model of monocrystalline silicon solar cells is established, and the effects of wafer parameters, such as the p-Si (100) substrate thickness, the defect density, and the doping concentration, on the electronic properties of monocrystalline silicon solar cells are analyzed. The results indicate that the solar cells with an A1 back-surface-field will have good electronic properties when the wafers meet the following three conditions: (i) the defect density is less than 1.0×1011 cm-3; (ii) the substrate thickness is in the range of 100 μm to 200 μm.

  2. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  3. Copper, Aluminum and Nickel: A New Monocrystalline Orthodontic Alloy

    Science.gov (United States)

    Wierenga, Mark

    Introduction: This study was designed to evaluate, via tensile and bend testing, the mechanical properties of a newly-developed monocrystalline orthodontic archwire comprised of a blend of copper, aluminum, and nickel (CuAlNi). Methods: The sample was comprised of three shape memory alloys; CuAlNi, copper nickel titanium (CuNiTi), and nickel titanium (NiTi); from various orthodontic manufacturers in both 0.018" round and 0.019" x 0.025" rectangular dimensions. Additional data was gathered for similarly sized stainless steel and beta-titanium archwires as a point of reference for drawing conclusions about the relative properties of the archwires. Measurements of loading and unloading forces were recorded in both tension and deflection testing. Repeated-measure ANOVA (alpha= 0.05) was used to compare loading and unloading forces across wires and one-way ANOVA (alpha= 0.05) was used to compare elastic moduli and hysteresis. To identify significant differences, Tukey post-hoc comparisons were performed. Results: The modulus of elasticity, deflection forces, and hysteresis profiles of CuAlNi were significantly different than the other superelastic wires tested. In all tests, CuAlNi had a statistically significant lower modulus of elasticity compared to the CuNiTi and NiTi wires (P <0.0001). The CuAlNi wire exhibited significantly lower loading and unloading forces than any other wire tested. In round wire tensile tests, loading force at all deflections was significantly lower for CuAlNi than CuNiTi or NiTi (P <0.0001). In tensile testing, the CuAlNi alloy was able to recover from a 7 mm extension (10% elongation) without permanent deformation and with little to no loss in force output. In large-deflection bend tests at 4, 5, and 6 mm deflection, CuAlNi showed the significantly lowest loading forces across the three wire materials (P <0.0001). The NiTi wires showed up to 12 times the amount of energy loss due to hysteresis compared to CuAlNi. CuAlNi showed a hysteresis

  4. Structures and optical properties of \\text{H}_{2}^{+} -implanted GaN epi-layers

    Science.gov (United States)

    Li, B. S.; Wang, Z. G.

    2015-06-01

    The implantation damage build-up and optical properties of GaN epitaxial films under \\text{H}2+ ion implantation have been investigated by a combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. GaN epitaxial films were implanted with 134 keV \\text{H}2+ ions to doses ranging from 3.75   ×   1016 to 1.75   ×   1017 \\text{H}2+  cm-2 at room temperature or the same dose of 1.5   ×   1017 \\text{H}2+  cm-2 at room temperature, 573 and 723 K. The dependence of lattice disorder induced by \\text{H}2+ -implantation on the ion dose can be divided into a three-step damage process. A strong influence of the H concentration on the defect accumulation is discussed. The decrease in relative Ga disorder induced by \\text{H}2+ -implantation is linear with increasing implantation temperature. The absorption coefficient of GaN epitaxial films increases with increasing ion dose, leading to the decrease in Raman scattering spectra of Ga-N vibration. With increasing implantation doses up to 5   ×   1016 \\text{H}2+  cm-2, nanoscale hydrogen bubbles are observed in the H deposition peak region. Interstitial-type dislocation loops are observed in the damaged layer located near the damage peak region, and the geometry of the dislocation loops produced by H implantation is analyzed. The surface layer is almost free of lattice disorder induced by \\text{H}2+ -implantation.

  5. Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Wei-Kai Wang

    2017-01-01

    Full Text Available Approximately 4-μm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111, and Si(100 substrates by high-temperature pulsed laser deposition (PLD. The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD, photoluminescence (PL, atomic force microscopy (AFM, transmission electron microscopy (TEM, and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111, and Si(100 exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100 substrate due to the highly directional energetic precursor migration on the substrate’s surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 °C operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga–Si etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

  6. Electrically active, doped monocrystalline silicon nanoparticles produced by hot wire thermal catalytic pyrolysis

    CSIR Research Space (South Africa)

    Scriba, MR

    2011-05-01

    Full Text Available Doped silicon nanoparticles have successfully been produced by hot wire thermal catalytic pyrolysis at 40 mbar and a filament temperature of 1800 °C, using a mixture of silane and diborane or phosphine. All particles are monocrystalline with shapes...

  7. Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

    Indian Academy of Sciences (India)

    Bhubesh Chander Joshi; Manish Mathew; B C Joshi; D Kumar; C Dhanavantri

    2010-01-01

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm2/V-s and carrier concentration is 4.5 × 1016 /cm3. AFM studies on GaN buffer layer show a dislocation density of 2 × 108/cm2 by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.

  8. Surface Properties of Unintentionally Doped GaN Film and Its Contact Behaviour with Ni/Cr/Au Compound Metals

    Institute of Scientific and Technical Information of China (English)

    苑进社; 陈光德; 齐鸣; 李爱珍; 谢伦军

    2003-01-01

    The surface properties of GaN films grown by plasma-assisted molecular beam epitaxy were investigated by using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, while the depth profile was analysed by the Ar ion sputtering method. The contaminants carbon and silicon are chiefly adsorbed onto the surface while oxygen and aluminium diffuse into the bulk to distribute in a certain depth. The mixture oxides is roughly 0.1 μm in thickness. Based on the analytical results of XPS of the GaN films, the Ni/Cr/Au interdigital metalsemiconductor-metal (MSM) structure has been fabricated. It has been found that the contact behaviour of the Ni/Cr/Au/undoped GaN exhibits a linear Ⅰ-Ⅴ characteristic under dark and 362-nm light excitation without annealing treatment. The lower resistance of the MSM structure has also been observed.

  9. Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.

    Science.gov (United States)

    Mølhave, Kristian; Wacaser, Brent A; Petersen, Dirch Hjorth; Wagner, Jakob B; Samuelson, Lars; Bøggild, Peter

    2008-10-01

    Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.

  10. Structural and optical properties of vanadium ion-implanted GaN

    Science.gov (United States)

    Macková, A.; Malinský, P.; Jagerová, A.; Sofer, Z.; Klímová, K.; Sedmidubský, D.; Mikulics, M.; Lorinčík, J.; Veselá, D.; Böttger, R.; Akhmadaliev, S.

    2017-09-01

    The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0 0 0 1) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 × 1015 and 5 × 1016 cm-2. Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

  11. Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers

    Science.gov (United States)

    Wu, C. H.; Lee, P. Y.; Chen, K. Y.; Tseng, Y. T.; Wang, Y. L.; Cheng, K. Y.

    2016-11-01

    Selective area growth (SAG) of high-density (2.5×109 cm-2) GaN nanowires (NWs) on Si(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of morphology and thickness of the AlN seeding layer on the quality of SAG GaN NWs are investigated. A thin AlN seeding layer of 30 nm thick with a surface roughness of less than 0.5 nm is suitable for high quality SAG GaN NWs growth. High-density AlN nanopedestal arrays used as seeds for SAG GaN NWs are fabricated from thin AlN seeding layers using soft nanoimprint lithography. By adjusting the growth temperature and Ga/N flux ratio, hexagonal shaped SAG GaN NWs are realized. The quality of SAG GaN NWs is evaluated by low temperature photoluminescence (PL) measurements. Three major groups of PL peaks at 3.47, 3.45, and 3.41 eV are identified. The peak at 3.471 eV is related to the neutral donor-bound exciton emission, and the 3.41 eV broadband emission is attributed to stacking faults or structural defects. The 3.45 eV peak is identified as the emission due to exciton recombination at polar inversion domain boundaries of NWs.

  12. Microstructure of laterally overgrown GaN layers

    Energy Technology Data Exchange (ETDEWEB)

    Liliental-Weber, Zuzanna; Cherns, David

    2001-04-03

    Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.

  13. Large-area, laterally-grown epitaxial semiconductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung; Song, Jie; Chen, Danti

    2017-07-18

    Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

  14. Modeling of Gallium Nitride Hydride Vapor Phase Epitaxy

    Science.gov (United States)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A reactor model for the hydride vapor phase epitaxy of GaN is presented. The governing flow, energy, and species conservation equations are solved in two dimensions to examine the growth characteristics as a function of process variables and reactor geometry. The growth rate varies with GaCl composition but independent of NH3 and H2 flow rates. A change in carrier gas for Ga source from H2 to N2 affects the growth rate and uniformity for a fixed reactor configuration. The model predictions are in general agreement with observed experimental behavior.

  15. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fireman, Micha N.; Browne, David A.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2016-02-07

    The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

  16. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D' Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  17. Cu Ions Irradiation Impact on Structural and Optical Properties of GaN Thin Film

    Science.gov (United States)

    Shah, A.; Husnain, G.; Ahmad, Ishaq; Mahmood, Arshad

    2013-03-01

    Epitaxial grown Gallium nitride (GaN) thin film on sapphire was irradiated with Cu ions at various fluences (5×1014, 1 ×1015 and 5×1015cm-2). The level of lattice disorder, as measured by Rutherford backscattering spectrometry and channeling (RBS/C), gradually increases with the increasing of ions fluence. Lattice amorphization is observed for the sample irradiated with fluence of 5×1015cm-2 which is also confirmed by X-ray diffractometer (XRD) analysis. It was found that both Raman modes of GaN layer clearly shifted with Cu+ fluences. Both Raman and X-ray analyses explore that Cu atom substituted into Ga sites. Atomic force microscopy (AFM) images show the irradiated GaN surface roughness increases with the increasing ions fluence. The UV-visible transmittance spectrum and ellipsometric measurements show a decrease in the band gap value after irradiation of Cu ions in the GaN film. Moreover, the optical constants (n and k) of the films vary with the increasing of Cu ion fluences.

  18. Electrical properties of Si-doped GaN prepared using pulsed sputtering

    Science.gov (United States)

    Arakawa, Yasuaki; Ueno, Kohei; Imabeppu, Hideyuki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-01-01

    In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm-3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm-3), the room temperature (RT) electron mobility was as high as 1008 cm2 V-1 s-1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V-1 s-1 at an electron concentration of 2 × 1020 cm-3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V-1 s-1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.

  19. Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Saidi, C.; Chaaben, N.; Laifi, J.; Sekrafi, T. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Tottereau, O. [Centre de Recherche sur l’Hétéro-Epitaxie et Ses Applications, Centre National de la Recherche Scientifique, CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne, Sophia Antipolis (France); Bchetnia, A.; El Jani, B. [Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia)

    2015-03-15

    Highlights: • We examined the Bi doping effect on GaN layers properties, grown by LT-MOVPE. • No obvious dependence of growth rate with TMBi flow rate. • TMBi flow rate addition resulted in a reduction of reflectivity oscillation mean value. • We note the appearance of islands and columns containing Bi on layers surface. • While there is a decrease in surface roughness suggesting Bi surfactant effect. - Abstract: Undoped GaN and diluted GaNBi alloys were grown on (0 0 0 1) sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 480 °C. By using in-situ laser reflectometry, it is found that the increase of TMBi flow rate leads to a reduction of the average value of reflectivity oscillations. Scanning electron microscopy (SEM) images gave a clear observation of the TMBi increasing amount effect on the surface morphology. The appearance of different structure (islands and columns) on GaN surface could be responsible to the reduction of the reflectivity oscillations average value. The energy dispersive X-ray (EDX) analysis showed that the observed structures were only composed of Bi compared to the flat GaN surface. Moreover, the surface morphology between islands and columns is improved when we increase the TMBi flow rate. This improvement is consistent with the decrease of root mean square (RMS) roughness, as measured by atomic force microscopy (AFM)

  20. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu [Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, 00936-8377, PR/USA (Puerto Rico); Aldalbahi, A. [Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

    2016-08-15

    High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  1. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

    Directory of Open Access Journals (Sweden)

    R. Velazquez

    2016-08-01

    Full Text Available High-quality single crystalline Gallium Nitride (GaN semiconductor has been synthesized using molecule beam epitaxy (MBE technique for development of high-performance deep ultraviolet (UV photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM. Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

  2. Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Ryu, Sung Ryong [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Ram, S.D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Kang, Tae Won, E-mail: twkang@dongguk.edu [Quantum-functional Semiconductor Research Center, Dongguk University-Seoul, 100-715 (Korea, Republic of); Clean Energy and Nano Convergence Centre, Hindustan University, Chennai 600 016 (India); Kwon, Sangwoo; Yang, Woochul [Department of physics, Dongguk University, Seoul, 100-715 (Korea, Republic of); Shin, Sunhye [Soft-Epi Inc., 240 Opo-ro, Opo-eup, Gwangju-si, Gyeonggi-do (Korea, Republic of); Woo, Yongdeuk [Department of Mechanical and Automotive Engineering, Woosuk University, Chonbuk 565-701 (Korea, Republic of)

    2015-08-30

    Highlights: • Uniaxial p–n junction diode in GaN nanorod is made by Hydride vapor phase epitaxy method. • The p–n junction diode property is clearly observed from the fabricated uniaxial p–n junction nanorod GaN nanorod. • Graphene is used as a current spreading layer to reduce the lateral resistance up to 700 times when compared with the commercial sapphire substrate, which is clearly explained with the aid of an equivalent circuit. • Kelvin Force Probe microscopy method is employed to visualize the p- and n- regions in a single GaN nanorod. - Abstract: Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p–n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p–n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis

  3. Properties of Ga1-xMnxN Epilayers Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Marcet, S.; Bellet, E.; Biquard, X.; Bougerol, C.; Cibert, J.; Ferrand, D.; Giraud, R.; Halley, D.; Kulatov, E.; Kuroda, S.; Mariette, H.; Titov, A.

    2005-06-01

    Wurtzite (Ga,Mn)N epilayers were grown by plasma-assisted molecular beam epitaxy. Mn incorporation strongly depends on growth conditions. Infrared optical absorption shows absorption bands related to neutral Mn acceptor A0 at 1.412 eV and 1.43 eV. Magnetic circular dichroism spectroscopyat the band gap edge, in agreement with magnetization data, exhibits temperature and magnetic field dependence revealing paramagnetic properties of Mn-doped GaN.

  4. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  5. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  6. Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

    Directory of Open Access Journals (Sweden)

    Jun-Yong Lu

    2011-09-01

    Full Text Available In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111 substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.

  7. Polarization of stacking fault related luminescence in GaN nanorods

    Directory of Open Access Journals (Sweden)

    G. Pozina

    2017-01-01

    Full Text Available Linear polarization properties of light emission are presented for GaN nanorods (NRs grown along [0001] direction on Si(111 substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL measured at low temperature for a single NR demonstrated an excitonic line at ∼3.48 eV and the stacking faults (SFs related transition at ∼3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.

  8. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

  9. Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Xu, S.R., E-mail: shengruixidian@126.com [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Li, P.X. [School of Technical Physics, Xidian University, Xi’an 710071 (China); Zhang, J.C.; Jiang, T. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); Ma, J.J. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China); School of Technical Physics, Xidian University, Xi’an 710071 (China); Lin, Z.Y.; Hao, Y. [Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071 (China)

    2014-11-25

    Highlights: • The LED structure on PSS was grown by MOCVD. • The distribution of defects in GaN film grown on PSS was investigated by TEM. • The main mechanism of TDs reducing on PSS was revealed. - Abstract: The microstructure of an epilayer structure for the blue light-emitting diode grown on a cone patterned sapphire substrate was characterized by high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy (TEM). Cross-sectional TEM revealed that most of the dislocations, which originated from planar region, propagated laterally toward the cone region during the lateral growth process. This change of the propagation direction prevented the dislocations from penetrate the epitaxy film and thus principally led to a drastic reduction in the threading dislocation density in GaN films. Particularly, we proposed that the six {11"‾01} semipolar facets play a very important role during the bending process.

  10. Low-threshold GaN thin-film random laser through the weak scattering feedback

    Science.gov (United States)

    Zhu, Hai; Chen, Anqi; Wu, Yanyan; Ji, Xu; He, Yiting; Qiu, Zhiren; Tang, Zikang; Yu, Siufung

    2017-02-01

    Room temperature random lasing is demonstrated from a GaN epitaxy film with defect pits that result from growth imperfection. The optical coherence feedback is attributed to the formation of closed-loop paths of light through the scattering effect of the defect pits, which can avoid the difficulty of fabricating an artificial cavity. The random lasing action was also investigated through near and far-field patterns that imaged onto the CCD camera. In addition, the angle distribution of the laser beam was illustrated by use of an angle-resolved spectrometer. The lasing threshold, based on the weak scattering diffusive mode of GaN, is about one order of magnitude lower than that strong scattering random laser (RL). Hence, the results in this paper represent a low-cost technique to realize GaN-based laser diodes without the fabrication difficulty of cavity facets that result from the hardness of the sapphire substrate.

  11. Use of AlGaN in the notch region of GaN Gunn diodes

    Science.gov (United States)

    Yang, Linan; Hao, Yue; Zhang, Jincheng

    2009-10-01

    The wurtzite gallium nitride (GaN) Gunn diodes with aluminum gallium nitride (AlGaN) as launcher in the notch region are investigated by negative-differential-mobility model based simulation. Under the operation of self-excitation oscillation with dipole domain mode, the simulations show that the diode with two-step-graded AlGaN launcher structure can yield the maximal rf power of 1.95 W and dc/rf conversion efficiency of 1.72% at the fundamental oscillation frequency of around 215 GHz. This kind of Gunn diode structure without the low doping process is convenient for accurately controlling the dopant concentration of GaN epitaxial growth.

  12. Origin of orange color in nominally undoped HVPE GaN crystals

    Science.gov (United States)

    Zimmermann, F.; Beyer, F. C.; Gärtner, G.; Röder, C.; Son, N. T.; Janzén, E.; Veselá, D.; Lorinčík, J.; Hofmann, P.; Krupinski, M.; Mikolajick, T.; Habel, F.; Leibiger, G.; Heitmann, J.

    2017-08-01

    In this article we investigated unintentionally doped (UID) GaN grown by hydride vapor phase epitaxy (HVPE) with respect to point defects and impurity concentration. The samples were orange tinted to different extent. Optical analysis was performed by micro-photoluminescence and absorption spectroscopy. Absorption measurements revealed an absorption peak at 1.5 eV related to an internal transition in Mn3+ impurities and a second band with low energy onset at 1.9 eV, both increasing with the extent of orange color. Electron paramagnetic resonance investigations showed the presence of Mn2+ and Fe3+ in the colored crystals. The overall impurity concentration was verified by secondary ion mass spectrometry. Orange tint is associated with an increase of transition metal contamination, especially Mn. Based on these observations we suggest that the orange coloring in the investigated UID HVPE GaN samples is caused by the presence of Mn impurities.

  13. Spin diffusion in bulk GaN measured with MnAs spin injector

    KAUST Repository

    Jahangir, Shafat

    2012-07-16

    Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.

  14. High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

    Science.gov (United States)

    Vico Triviño, N.; Rossbach, G.; Dharanipathy, U.; Levrat, J.; Castiglia, A.; Carlin, J.-F.; Atlasov, K. A.; Butté, R.; Houdré, R.; Grandjean, N.

    2012-02-01

    We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and usual dry etching techniques. The membrane was released by underetching the Si (111) substrate. Micro-photoluminescence measurements performed at low temperature exhibit a quality factor as high as 5200 at ˜420 nm, a value suitable to expand cavity quantum electrodynamics to the near UV and the visible range and to develop nanophotonic platforms for biofluorescence spectroscopy.

  15. The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

    Directory of Open Access Journals (Sweden)

    Obrenović Marija D.

    2016-01-01

    Full Text Available The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

  16. Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2012-10-15

    In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  18. Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

    Science.gov (United States)

    Schumann, T; Gotschke, T; Limbach, F; Stoica, T; Calarco, R

    2011-03-04

    GaN nanowires (NWs) were grown selectively in holes of a patterned silicon oxide mask, by rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide was deposited on a thin AlN buffer layer previously grown on a Si(111) substrate. Regular arrays of holes in the oxide layer were obtained using standard e-beam lithography. The selectivity of growth has been studied varying the substrate temperature, gallium beam equivalent pressure and patterning layout. Adjusting the growth parameters, GaN NWs can be selectively grown in the holes of the patterned oxide with complete suppression of the parasitic growth in between the holes. The occupation probability of a hole with a single or multiple NWs depends strongly on its diameter. The selectively grown GaN NWs have one common crystallographic orientation with respect to the Si(111) substrate via the AlN buffer layer, as proven by x-ray diffraction (XRD) measurements. Based on the experimental data, we present a schematic model of the GaN NW formation in which a GaN pedestal is initially grown in the hole.

  19. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

    Science.gov (United States)

    Wang, T.

    2016-09-01

    The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

  20. Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Hsu, Hsiao-Chiu; Su, Yan-Kuin; Huang, Shyh-Jer; Wang, Yu-Jen; Wu, Chun-Ying; Chou, Ming-Chieh

    2010-04-01

    In this study, we had demonstrated the direct growth of nonpolar a-plane GaN on an r-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer. First, in this experiment, we had determined the optimum temperature for two-step growth, including obtaining three-dimensional (3D) GaN islands in the nucleation layer and coalescing with a further two-dimensional (2D) growth mode. The result shows that the nucleation layer grown under high temperature (1150 °C) leads to large islands with few grain boundaries. Under the same temperature, the effect of the V/III ratio on the growth of the overlaying GaN layer to obtain a flat and void free a-plane GaN layer is also studied. The result indicates one can directly grow a smooth epitaxial layer on an r-plane sapphire by changing the V/III ratio. The rms roughness decreases from 13.61 to 2.02 nm. The GaN crystal quality is verified using a mixed acid to etch the film surface. The etch pit density (EPD) is 3.16 ×107 cm-2.

  1. Soil Pressure Mini-sensor Made of Monocrystalline Silicon and the Measurement of Its Sensitivity Coefficient

    Institute of Scientific and Technical Information of China (English)

    YU Xiao; SU Xiaoke

    2005-01-01

    A calibration test was done in order to measure its sensitivity coefficient by an improved soil test device. The experimental result shows that the soil pressure min- sensor made of the monocrystalline silicon ( SPMMS ) is proved to be good linear, high precision and less discrete that can fetch precise data in low pressure range even near by 0 point, which guarantees the reliability of the soil pressure test in geotechnical engineering.

  2. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    OpenAIRE

    Chen Xiao; Jian Guo; Peng Zhang; Cheng Chen; Lei Chen; Linmao Qian

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was...

  3. Transmission electron microscopy of GaN based, doped semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pretorius, A.

    2006-07-01

    This thesis addresses the analysis of GaN based heterostructures with transmission electron microscopy (TEM). Basic properties of the material of interest are introduced in chapter 2. These include the structural and optical properties as well as an introduction to the growth methods used for the samples analysed in this work. In chapter 3 a brief theoretical treatment of TEM is given. As one main topic of this work is the determination of the In concentration in InGaN islands using strain state analysis, a detailed description of the method is given. Chapter 4 describes the results obtained for pyramidal defects present in metalorganic vapour phase epitaxy grown GaN:Mg with high dopant concentration. Based on the experimental results and the well established knowledge that GaN of inverted polarity is present inside the pyramidal defects, a variety of basal plane inversion domain boundary models was set up. From these models, HRTEM images were simulated using the multislice approach, followed by a quantitative comparison to experimentally obtained HRTEM images. Another focus of this work is the analysis of In{sub x}Ga{sub 1-x}N islands grown on GaN presented in chapter 5. Following a literature survey which describes different methods used to obtain In{sub x}Ga{sub 1-x}N islands, the first topic is the distinction of In{sub x}Ga{sub 1-x}N islands and metal droplets, which can form during growth. This is followed by the experimental results of molecular beam epitaxy and metalorganic vapour phase epitaxy grown In{sub x}Ga{sub 1-x}N island and quantum dot samples. (orig.)

  4. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaia, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...

  5. Fabrication of high resolution and lightweight monocrystalline silicon x-ray mirrors

    Science.gov (United States)

    Riveros, Raul E.; Kolos, Linette D.; Mazzarella, James R.; McKeon, Kevin P.; Zhang, William W.

    2015-09-01

    Monocrystalline silicon as an x-ray mirror substrate material promises significant improvements over the x- ray mirror technologies used to date, since it is mechanically stiff, stress-free, highly thermally conductive, and widely commercially available. Producing highly accurate and lightweight x-ray mirrors from monocrystalline silicon requires a unique and specialized manufacturing process capable of producing mirrors quickly and cost effectively. The identification, development, and testing of this process is the focus of the work described in this proceeding. Monocrystalline silicon blocks were obtained, and a variety of processes (wire electro-discharge machining, etching, polishing) were applied to generate an accurate and stress-free cylindrical or Wolter-I mirror surface. The mirror surface is then sliced off at a thickness of mirror segment with mirror production process requires ~2 days to produce a mirror segment and is easily integrated into a cost-reducing parallel processing scheme. Presently, there is strong evidence that the mirror production process described in this paper will meet the stringent requirements of future x-ray missions.

  6. Progress in microwave GaN HEMT grown by MBE on silicon and smart cut TM engineered substrates for high power applications

    OpenAIRE

    2005-01-01

    SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative possible substrates for epitaxial growth of Wide Band Gap (WBG) materials such as GaN and GaN alloys. Similar to bonded SOI structure, the SiCOI structures basically comprises a thin film of single SiC crystal bonded onto a substrate such as, for instance, silicon substrate. Additionally to the well known insulation properties, SiCOI substrates have been proven to be adap...

  7. Progress in microwave GaN HEMT grown by MBE on silicon and smart Cut TM engineered substrates for high power applications

    OpenAIRE

    2005-01-01

    SiCOI (SiC On Insulator) composite substrates obtained by the Smart-Cut TM process are alternative possible substrates for epitaxial growth of Wide Band Gap (WBG) materials such as GaN and GaN alloys. Similar to bonded SOI structure, the SiCOI structures basically comprises a thin film of single SiC crystal bonded onto a substrate such as, for instance, silicon substrate. Additionally to the well known insulation properties, SiCOI substrates have been proven to be adap...

  8. Optical properties of self assembled GaN polarity inversion domain boundary

    Energy Technology Data Exchange (ETDEWEB)

    Liu, M.-C.; Cheng, Y.-J. [Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Chang, J.-R.; Chang, C.-Y. [Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan (China); Hsu, S.-C. [Department of Chemical and Materials Engineering, Tamkang University, No.151, Yingzhuan Rd., Danshui Dist., Taipei, Taiwan (China)

    2011-07-11

    We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

  9. Local Surface Potential of GaN Nanostructures Probed by Kelvin Force Microscopy

    Institute of Scientific and Technical Information of China (English)

    GU Xiao-Xiao(顾骁骁); HUANG Da-Ming(黄大鸣); MORKOC Hadis

    2003-01-01

    We have measured the fluctuation in local surface potential of GaN epitaxial films having two different types of nanostructure, as-grown islands or, etched pits, by Kelvin probe force microscopy. We found that the perimeters of as-grown islands and the internal walls of, etched pits have lower surface potential as compared with the asgrown c-plane. The results show that the crystallographic facets tilted with respect to c-plane have higher work function and are electrically more active than c-surface.

  10. Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

    OpenAIRE

    2011-01-01

    Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy (HVPE) were studied by transient photoluminescence (PL). Concentrations of silicon and oxygen were varied in the range between 10(17) and 10(18) cm(-3), as confirmed by secondary ion mass spectroscopy (SIMS). We show that a reduction of the background silicon concentration by one order of magnitude compared to the background level in undoped samples can be achieved by incorporation of oxygen during the grow...

  11. Blue-U.V. homojunction GaN LEDs fabricated by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Beaumont, B.; Haffouz, S.; Leroux, M.; Lorenzini, P.; Gibart, P. [CNRS, Valbonne (France). CRHEA; Calle, F.; Monroy, E.; Calleja, E.; Munoz, E. [Dipt. de Ingeniera Electronica, E.T.S.I. de Telecomunicacion, Univ. Politecnica de Madrid (Spain)

    1998-08-01

    Blue-U.V. gallium nitride light emitting diodes (LEDs) p-n homojunctions were fabricated by metal organics vapour phase epitaxy (MOVPE). P- doping of GaN has been achieved using bismethyl-cyclopentadienyl Mg, (MeCp){sub 2}Mg. With proper design of the growth chamber and thermal annealing, doping densities up to 2 x 10{sup 18}cm{sup -3} have been reached. Photoluminescence (PL) data reveal, in addition to the shallow acceptors, deep Mg related levels. N-doping is straightforward, Si is easily introduced via silane and results in free carrier concentrations up to 10{sup 19}cm{sup -3}. (orig.) 13 refs.

  12. A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

    Science.gov (United States)

    George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.

    1994-01-01

    The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.

  13. Free-standing electronic character of monolayer MoS2 in van der Waals epitaxy

    Science.gov (United States)

    Kim, HoKwon; Dumcenco, Dumitru; Frégnaux, Mathieu; Benayad, Anass; Chen, Ming-Wei; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier

    2016-08-01

    We have evaluated as-grown Mo S2 crystals, epitaxially grown on a monocrystalline sapphire by chemical vapor deposition (CVD), with direct electronic band-structure measurements by energy-filtered k -space photoelectron emission microscopy performed with a conventional laboratory vacuum ultraviolet He I light source under off-normal illumination. The valence states of the epitaxial Mo S2 were mapped in momentum space down to 7 eV below the Fermi level. Despite the high nucleation density within the imaged area, the CVD Mo S2 possesses an electronic structure similar to the free-standing monolayer Mo S2 single crystal, and it exhibits hole effective masses of 2.41 ±0.05 m0 , and 0.81 ±0.05 m0 , respectively, at Γ and K high-symmetry points that are consistent with the van der Waals epitaxial growth mechanism. This demonstrates the excellent ability of the Mo S2 CVD on sapphire to yield a highly aligned growth of well-stitched grains through epitaxial registry with a strongly preferred crystallographic orientation.

  14. Ferromagnetism in with Fe implanted GaN and TiO{sub 2}; Ferromagnetismus in mit Fe implantierten GaN und TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Talut, Georg

    2009-12-15

    In the present study it was tried to create a diluted magnetic semiconductor on the basis of GaN and TiO{sub 2} by means of ion beam implantation. In most cases, by characterization of structural and magnetic properties, it was possible to prove that the ferromagnetic state is related to either spinodal decomposition or secondary phase formation. In case of Fe implanted GaN spinodal decomposition, epitaxially oriented {alpha}-Fe or {epsilon}-Fe{sub 3}N nanocrystals were found to be responsible for the ferromagnetic behavior. In addition, the formation of {gamma}-Fe clusters was observed. Similarly, in TiO{sub 2} the ferromagnetism is related to the formation of epitaxially oriented {alpha}-Fe clusters. Dependent on the process parameters during annealing experiments several various secondary phases were formed. A critical examination of the references in literature points out the significance of usage of sensitive and complementary probe techniques (like CEMS, SQUID, XRD, EXAFS), in order to be able to discuss the origin of ferromagnetism in the field of diluted magnetic semiconductors in a proper way. (orig.)

  15. Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS

    Energy Technology Data Exchange (ETDEWEB)

    Mitsunaga, T.; Yagishita, Y.; Osaka, J.; Mizutani, T. [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan); Kurouchi, M. [Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan); Kishimoto, S. [Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan); Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya (Japan)

    2008-07-01

    The dependence of deep levels in GaN epitaxial layer grown by molecular beam epitaxy on the V/III ratio was studied by capacitance deep level transient spectroscopy (DLTS). Four peaks corresponding to the electron traps were observed in the unintentionally n-doped GaN films grown at various growth conditions. The deep level concentrations of T1 (0.31 eV) and T4 (0.21 eV) traps increased with decrease of the V/III ratio. This suggests that T1 and T4 traps are related to the N-vacancies. Those of T2 (0.84 eV) and T3 (1.13 eV) traps did not show obvious dependence on the V/III ratio, but the concentration of the T2 and T3 traps increased with increase of the residual carrier concentration. T2 and T3 traps might have some correlation with the residual donor species. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    Science.gov (United States)

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-05

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  17. GaN Initiative for Grid Applications (GIGA)

    Energy Technology Data Exchange (ETDEWEB)

    Turner, George [MIT Lincoln Lab., Lexington, MA (United States)

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  18. Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

    Science.gov (United States)

    Ali, M.; Romanov, A. E.; Suihkonen, S.; Svensk, O.; Sintonen, S.; Sopanen, M.; Lipsanen, H.; Nevedomsky, V. N.; Bert, N. A.; Odnoblyudov, M. A.; Bougrov, V. E.

    2012-04-01

    In this article, we analyze the behavior of threading dislocations in GaN layers re-grown on hexagonally patterned mask-less GaN. The growth mode of the material with patterned hexagonal morphology changes with the diameter and the periodicity of the hexagonal patterns. The growth mode directly affects the shape of the voids that are formed in this kind of lateral epitaxy. Transmission electron microscopy has been used to study threading dislocations in GaN layers with voids having different sizes and sidewall angles. The results show that a significant number of threading dislocations near the tapered void's surface undergo a 90° reorientation in their propagation trajectory whereas almost no dislocations bend in the case of smaller voids having more vertical sidewalls. Different types of dislocations in the vicinity of the voids have also been identified using the invisibility g·b criteria. The full width at half maximum values for XRD ω-scan recorded in (002) reflection drop from 256″ to 181″ as the void sidewall inclination changes from 85° to 60°. A similar dropping trend in the full width at half maximum values for asymmetric diffraction reflections has also been observed.

  19. Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces; Rastertunnelmikroskopie und -spektroskopie an GaN- und InGaN-Oberflaechen

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, David

    2009-12-02

    Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

  20. Epitaxial growth of III-V nitrides and phase separation and ordering in indium gallium nitride alloys

    Science.gov (United States)

    Doppalapudi, Dharanipal

    The family of III-V nitrides are wide band-gap semiconductors with a broad range of opto-electronic applications in LEDs, laser diodes, UV detectors as well as high temperature/high frequency devices. Due to the lack of good quality native substrates, GaN is grown on foreign substrates that have a lattice and thermal mismatch with GaN. This results in a material with a high density of defects, which in turn adversely affects the opto-electronic properties of the epilayer. In this study, GaN films were epitaxially grown on various substrates (C-plane sapphire, A-plane sapphire, SiC and ZnO) by molecular beam epitaxy. Additionally, GaN homoepitaxy onto laterally overgrown thick GaN substrates was investigated. It was demonstrated that the polarity of the GaN film plays a major role in determining the properties of the films. The growth parameters were optimized to eliminate inversion domain boundaries, which result in domains of opposite polarity in the GaN lattice. For growth on A-plane sapphire, it was found that substrate nitridation and low temperature buffer deposition are critical in order to obtain good epitaxial growth, in spite of the relatively small mismatch between the film and substrate. A crystallographic model was developed to explain this observation. By optimizing growth parameters, GaN films with excellent structural, transport, optical and device properties were grown. The second part of this research involves growth of ternary alloys and superlattice structures, which are essential in the fabrication of many devices. It was found that the InN-GaN pseudo-binary system is not homogeneous over the entire composition range. Due to the mismatch between the tetrahedral radii of GaN and InN, InGaN alloys exhibited phase separation and long-range atomic ordering. Investigations of InxGa1-xN films grown over a wide range of compositions by XRD and TEM showed that the predominant strain relieving mechanism was phase separation in films with x > 0.2, and

  1. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  2. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  3. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Kyuseung Lee

    2016-04-01

    Full Text Available In this study, self-assembled inclined (1-10-3-oriented GaN nanorods (NRs were grown on nanoimprinted (10-10 m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]sapp direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]sapp. Uni-directionally inclined NRs were formed through the one-sided (10-11-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3 GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  4. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  5. Bandgap engineering of GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Bang-Ming; Yan, Hui [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Computational Science Research Center, Beijing, 100094 (China); Yam, Chi-Yung, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn [Beijing Computational Science Research Center, Beijing, 100094 (China); Xu, Li-Chun [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Lau, Woon-Ming [Beijing Computational Science Research Center, Beijing, 100094 (China); Chengdu Green Energy and Green Manufacturing Technology R& D Center, Chengdu, Sichuan, 610207 (China)

    2016-05-15

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  6. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

    Science.gov (United States)

    Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe; Kalanyan, Berc; Bhimanapati, Ganesh R; Eichfeld, Sarah M; Burke, Robert A; Shah, Pankaj B; O'Regan, Terrance P; Crowne, Frank J; Birdwell, A Glen; Robinson, Joshua A; Davydov, Albert V; Ivanov, Tony G

    2016-03-22

    When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures, where each of the 3D and 2D semiconductors is both a template for subsequent epitaxial growth and an active component of the device. The MoS2 monolayer triangles average 1 μm along each side, with monolayer blankets (merged triangles) exhibiting properties similar to that of single-crystal MoS2 sheets. Photoluminescence, Raman, atomic force microscopy, and X-ray photoelectron spectroscopy analyses identified monolayer MoS2 with a prominent 20-fold enhancement of photoluminescence in the center regions of larger triangles. The MoS2/GaN structures are shown to electrically conduct in the out-of-plane direction, confirming the potential of directly synthesized 2D/3D semiconductor heterostructures for vertical current flow. Finally, we estimate a MoS2/GaN contact resistivity to be less than 4 Ω·cm(2) and current spreading in the MoS2 monolayer of approximately 1 μm in diameter.

  7. Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer

    Science.gov (United States)

    Grinys, Tomas; Dargis, Rytis; Frentrup, Martin; JucevičienÄ--, AgnÄ--KalpakovaitÄ--; Badokas, Kazimieras; StanionytÄ--, Sandra; Clark, Andrew; Malinauskas, Tadas

    2016-09-01

    After epitaxial growth of GaN on Si(100) substrates using an Er2O3 interlayer, two dominant growth orientations can be observed: semi-polar (10 1 ¯ 3 ) as well as non-polar (11 2 ¯ 0 ) . Epilayers with the (10 1 ¯ 3 ) orientation lead to the formation of truncated pyramids, which were studied in detail by high-resolution X-ray diffraction, photoluminescence, and scanning electron microscopy (SEM). Depending on the GaN growth orientation and in-plane relation to the Er2O3 interlayer, lattice mismatches in the growth plane were calculated. In order to understand the formation of truncated pyramids, a method for facet identification from SEM images under different tilt angles was developed. This method was used to reconstruct truncated pyramids from our experiments. These were then compared with calculations of the corresponding kinetic Wulff construction, to explain the preferential growth of (10 1 ¯ 3 ) GaN.

  8. A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si(111) Studied by HRXRD and RBS/Channeling

    Institute of Scientific and Technical Information of China (English)

    DING Zhi-Bo; WANG Kun; YAO Shu-De

    2008-01-01

    @@ Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE).From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD),we obtain the lattice constant (a and c) of two GaN epilayers (aA = 0.3190 nm,cA = 0.5184 nm and aB = 0.3192 nm,cB = 0.5179 nm),the crystal quality of two GaN epilayers ( XminA = 4.87%,XminB=7.35% along axis) and the tetragonal distortion eT of the two samples along depth (sample A is nearly fully relaxed,sample B is not relaxed enough).

  9. Half Layer By Half Layer Growth of a Blue Phosphorene Monolayer on a GaN(001) Substrate

    Science.gov (United States)

    Zeng, Jiang; Cui, Ping; Zhang, Zhenyu

    2017-01-01

    Black phosphorene (BlackP), consisting of a vertically corrugated yet single layer of phosphorus atoms, is a latest member of the expanding two-dimensional (2D) materials family with high carrier mobility and immense application potentials. Blue phosphorene (BlueP), an allotrope of BlackP with appealing properties of its own, consists of a more flatly arranged layer of phosphorus atoms. To date, direct growth of either BlackP or BlueP remains a daunting challenge. Using first-principles approaches, here we establish a novel kinetic pathway for fabricating BlueP via epitaxial growth. Our systematic energetic studies reveal that both BlackP and BlueP monolayers can be readily stabilized on Cu(111), Au(111), and GaN(001) substrates. The semiconducting GaN(001) is further shown to be superior for fabricating BlueP, through an intriguing half-layer-by-half-layer (HLBHL) growth mechanism. Within this scheme, the GaN(001) surface is first preferentially covered by a half layer of phosphorus adatoms, followed by the addition of the other half. Once formed, such a BlueP monolayer is thermodynamically stable, as tested using ab initio molecular dynamics simulations. The HLBHL growth mechanism discovered here may enable mass production of high-quality BlueP, and could also be instrumental in achieving epitaxial growth of BlackP and other 2D materials.

  10. Bulk ammonothermal GaN

    Science.gov (United States)

    Dwiliński, R.; Doradziński, R.; Garczyński, J.; Sierzputowski, L. P.; Puchalski, A.; Kanbara, Y.; Yagi, K.; Minakuchi, H.; Hayashi, H.

    2009-05-01

    In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10 3 cm -2) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.

  11. Coupling of Nitrogen-Vacancy Centers to Photonic Crystal Cavities in Monocrystalline Diamond

    CERN Document Server

    Faraon, Andrei; Huang, Zhihong; Acosta, Victor M; Beausoleil, Raymond G

    2012-01-01

    The zero-phonon transition rate of a nitrogen-vacancy center is enhanced by a factor of ~70 by coupling to a photonic crystal resonator fabricated in monocrystalline diamond using standard semiconductor fabrication techniques. Photon correlation measurements on the spectrally filtered zero-phonon line show antibunching, a signature that the collected photoluminescence is emitted primarily by a single nitrogen-vacancy center. The linewidth of the coupled nitrogen-vacancy center and the spectral diffusion are characterized using high-resolution photoluminescence and photoluminescence excitation spectroscopy.

  12. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-12-01

    Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  13. Molecular Dynamics Simulation of Nanoindentation-induced Mechanical Deformation and Phase Transformation in Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2008-01-01

    Full Text Available AbstractThis work presents the molecular dynamics approach toward mechanical deformation and phase transformation mechanisms of monocrystalline Si(100 subjected to nanoindentation. We demonstrate phase distributions during loading and unloading stages of both spherical and Berkovich nanoindentations. By searching the presence of the fifth neighboring atom within a non-bonding length, Si-III and Si-XII have been successfully distinguished from Si-I. Crystallinity of this mixed-phase was further identified by radial distribution functions.

  14. Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon

    Directory of Open Access Journals (Sweden)

    Иван Федорович Червоный

    2015-11-01

    Full Text Available It is experimentally established, that density of oxidation-induced stacking faults (OISF in the boron doped monocrystalline silicon plates, that above, than it is more relation of oxygen atoms concentration to carbon atoms concentration in them.On research results of geometry of OISF rings in the different sections of single-crystal geometry of areas is reconstructed with their different closeness. At adjustment of the growing modes of single-crystals of silicon the increase of output of suitable product is observed

  15. Vertical current-flow enhancement via fabrication of GaN nanorod p-n junction diode on graphene

    Science.gov (United States)

    Ryu, Sung Ryong; Ram, S. D. Gopal; Lee, Seung Joo; Cho, Hak-dong; Lee, Sejoon; Kang, Tae Won; Kwon, Sangwoo; Yang, Woochul; Shin, Sunhye; Woo, Yongdeuk

    2015-08-01

    Mg doped GaN nanorods were grown on undoped n-type GaN nanorods uniaxial on monolayer graphene by hydride vapor phase epitaxy (HVPE) method. The monolayer graphene used as the bottom electrode and a substrate as well provides good electrical contact, acts as a current spreading layer, well suitable for the growth of hexagonal GaN nanorod. In addition it has a work function suitable to that of n-GaN. The formed p-n nanorods show a Schottky behavior with a turn on voltage of 3 V. Using graphene as the substrate, the resistance of the nanorod is reduced by 700 times when compared with the case without using graphene as the current spreading layer. The low resistance of graphene acts in parallel with the resistance of the GaN buffer layer, and reduces the resistance drastically. The formed p-n junction in a single GaN nanorod is visualized by Kelvin Force Probe Microscopy (KPFM) to have distinctively contrast p and n regions. The measured contact potential difference of p-and n-region has a difference of 103 mV which well confirms the formed regions are electronically different. Low temperature photoluminescence (PL) spectra give evidence of dopant related acceptor bound emission at 3.2 eV different from 3.4 eV of undoped GaN. The crystalline structure, compositional purity is confirmed by X-ray diffraction (XRD), Transmission and Scanning electron microcopies (SEM), (TEM), Energy dispersive analysis by X-ray (EDAX) and X-ray photoelectron spectroscopy (XPS) as well.

  16. Ultraviolet Laser SQUID Microscope for GaN Blue Light Emitting Diode Testing

    Energy Technology Data Exchange (ETDEWEB)

    Daibo, M [Department of Electrical and Electronic Engineering, Faculty of Engineering, Iwate University, Morioka 020-8551 (Japan); Kamiwano, D [Graduate School of Engineering, Iwate University, Morioka 020-8551 (Japan); Kurosawa, T [Graduate School of Engineering, Iwate University, Morioka 020-8551 (Japan); Yoshizawa, M [Graduate School of Engineering, Iwate University, Morioka 020-8551 (Japan); Tayama, N [Department of Electrical and Electronic Engineering, Faculty of Engineering, Iwate University, Morioka 020-8551 (Japan)

    2006-06-01

    We carried out non-contacting measurements of photocurrent distributions in GaN blue light emitting diode (LED) chips using our newly developed ultraviolet (UV) laser SQUID microscope. The UV light generates the photocurrent, and then the photocurrent induces small magnetic fields around the chip. An off-axis arranged HTS-SQUID magnetometer is employed to detect a vector magnetic field whose typical amplitude is several hundred femto-tesla. Generally, it is difficult to obtain Ohmic contacts for p-type GaN because of the low hole concentration in the p-type epitaxial layer and the lack of any available metal with a higher work function compared with the p-type GaN. Therefore, a traditional probecontacted electrical test is difficult to conduct for wide band gap semiconductors without an adequately annealed electrode. Using the UV-laser SQUID microscope, the photocurrent can be measured without any electrical contact. We show the photocurrent vector map which was reconstructed from measured magnetic fields data. We also demonstrate how we found the position of a defect of the electrical short circuits in the LED chip.

  17. Magnetic Characteristics of Mn-Implanted GaN Nanorods Followed by Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Im Taek Yoon

    2012-01-01

    Full Text Available We have investigated the magnetic and optical properties of dislocation-free vertical GaN nanorods with diameters of 150 nm grown on (111 Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, it can be concluded that the ferromagnetic property of GaMnN nanorod with a Curie temperature over 300 K is associated with the formation of Mn4Si7 magnetic phase which results from the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms in the porous layer between the nanorods that form precipitates in the Si substrate before or during the annealing step amongst the GaN nanorods.

  18. The structural and optical properties of metal ion-implanted GaN

    Science.gov (United States)

    Macková, A.; Malinský, P.; Sofer, Z.; Šimek, P.; Sedmidubský, D.; Veselý, M.; Böttger, R.

    2016-03-01

    The practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0 0 0 1) crystallographic direction that have been grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200 keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM.

  19. Raman scattering studies on manganese ion-implanted GaN

    Institute of Scientific and Technical Information of China (English)

    Xu Da-Qing; Zhang Yi-Men; Zhang Yu-Ming; Li Pei-Xian; Wang Chao

    2009-01-01

    This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted.Several Raman defect modes have emerged from the implanted samples.The structures around 182 cm-1 modes are attributed to the disorder-activated Raman scattering,whereas the 361 cm-1 and 660 cm-1 peaks are assigned to nitrogen vacancy-related defect scattering.One additional peak at 280 cm-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering.A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700℃ and 1050℃ on Mn implanted GaN epilayers.The behaviour of peak-shape change and full width at half maximum(FWHM)of the A1(LO)(733 cm-1)and EH2(566 cm-1)Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.

  20. A Ka-band 22 dBm GaN amplifier MMIC

    Institute of Scientific and Technical Information of China (English)

    Wang Dongfang; Chen Xiaojuan; Yuan Tingting; Wei Ke; Liu Xinyu

    2011-01-01

    A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AIGaN/GaN HEMT with a gate-length of 0.25 μm and a gate-width of 2 × 75 μm.Under Vds =10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5% at 26.5 GHz.The output power density of the AIGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds =10 V.

  1. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  2. High-pressure crystallization of GaN for electronic applications

    CERN Document Server

    Grzegory, I

    2002-01-01

    The results obtained with the use of pressure-grown GaN single-crystalline substrates allow us to draw the following conclusions important for the construction of In-free UV light emitting diodes and lasers and InGaN-based high-power blue lasers. (1) The application of pressure-grown GaN single-crystalline substrates allows us to grow near-dislocation-free layer structures by both metal- organic chemical vapour deposition and molecular beam epitaxy. (2) The elimination of dislocations leads to highly efficient UV emission from GaN and GaN/AlGaN quantum wells, which is impossible for strongly dislocated structures grown on sapphire. (3) At high excitations (e.g. in lasers), dislocations are also effective non-radiative recombination centres in InGaN-containing structures, so the elimination of these defects is crucial for better performance of blue lasers. In this paper, the optical and structural properties of the near-dislocation-free GaN-based structures leading to the above conclusions are discussed.

  3. Polarity in GaN and ZnO: Theory, measurement, growth, and devices

    Science.gov (United States)

    Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

    2016-12-01

    The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

  4. Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

    Science.gov (United States)

    Le Boulbar, E. D.; Priesol, J.; Nouf-Allehiani, M.; Naresh-Kumar, G.; Fox, S.; Trager-Cowan, C.; Šatka, A.; Allsopp, D. W. E.; Shields, P. A.

    2017-05-01

    The semiconductor gallium nitride is the material at the centre of energy-efficient solid-state lighting and is becoming increasingly important in high-power and high-frequency electronics. Reducing the dislocation density of gallium nitride planar layers is important for improving the performance and reliability of devices, such as light-emitting diodes and high-electron-mobility transistors. The patterning of selective growth masks is one technique for forcing a three-dimensional growth mode in order to control the propagation of threading defects to the active device layers. The morphology of the three-dimensional growth front is determined by the relative growth rates of the different facets that are formed, and for GaN is typically limited by the slow-growing {1 -1 0 1} facets. We demonstrate how the introduction of nanodash growth windows can be oriented in an array to preserve fast-growing {1 1 -2 2} facets at the early stage of growth to accelerate coalescence of three-dimensional structures into a continuous GaN layer. Cathodoluminescence and Electron Channelling Contrast Imaging methods, both used to measure the threading dislocation density, reveal that the dislocations are organised and form a distinctive pattern according to the underlying mask. By optimising the arrangement of nanodashes and the nanodash density, the threading dislocation density of GaN on sapphire epilayers can be reduced significantly from 109 cm-2 to 3.0 × 107 cm-2. Raman spectroscopy, used to monitor the strain in the overgrown GaN epilayers, shows that the position of the GaN E2H phonon mode peak was reduced as the dash density increases for a sample grown via pendeo-epitaxy whilst no obvious change was recorded for a sample grown via more conventional epitaxial lateral overgrowth. These results show how growth mask design can be used to circumvent limitations imposed by the growth dynamics. Moreover, they have revealed a greater understanding of the influence of the growth

  5. Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing Gao

    2015-09-01

    Full Text Available To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.

  6. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  7. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  8. Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

    Science.gov (United States)

    Qing, Wang; Yang, Liu; Yongjian, Sun; Yuzhen, Tong; Guoyi, Zhang

    2016-08-01

    A new layer transfer technique which comprised double bonding and a step annealing process was utilized to transfer the GaN epilayer from a sapphire substrate to a Mo substrate. Combined with the application of the thermal-stable bonding medium, the resulting two-inch-diameter GaN template showed extremely good stability under high temperature and low stress state. Moreover, no cracks and winkles were observed. The transferred GaN template was suitable for homogeneous epitaxial, thus could be used for the direct fabrication of vertical LED chips as well as power electron devices. It has been confirmed that the double bonding and step annealing technique together with the thermal-stable bonding layer could significantly improve the bonding strength and stress relief, finally enhancing the thermal stability of the transferred GaN template. Project supported by the Guangdong Innovative Research Team Program (No. 2009010044), the China Postdoctoral Science Foundation (No. 2014M562233), the National Natural Science Foundation of Guangdong, China (No. 2015A030312011), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (No. IOSKL2014KF17).

  9. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [Shanghai Jiao Tong University, Research Institute of Micro/Nano Science and Technology, Shanghai (China); Cao, Bin [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, Wuhan (China); Liu, Sheng [Shanghai Jiao Tong University, Research Institute of Micro/Nano Science and Technology, Shanghai (China); Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, Wuhan (China); Huazhong University of Science and Technology, Institute of Microsystems, Wuhan (China)

    2011-11-15

    Inductively coupled plasma (ICP) etching of GaN is systemically investigated by changing ICP power/RF bias power, operating pressure, and Cl{sub 2}/BCl{sub 3} gas mixing ratio. The hexagonal etch pits related to screw dislocation existing along GaN epitaxial layer were observed on the etched GaN surface after ICP etching. The intensity of band-edge emission is significantly reduced from the etched n-GaN surface, which reveals that plasma-induced damage are generated after ICP etching. The oblique sidewall is transferred into GaN using a combination of Cl{sub 2}/BCl{sub 3} plasma chemistry and hard mask SiO{sub 2}. By adjusting ICP etching process parameters, oblique sidewalls with various oblique angles can be formed, allowing for conformal metal lines coverage across the mesa structures, which can play an important role in the interconnection of multiple microchips for light emitting diodes (LEDs) fabrication. (orig.)

  10. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    Science.gov (United States)

    Adikimenakis, A.; Lotsari, A.; Dimitrakopulos, G. P.; Kehagias, Th.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Komninou, Ph.; Georgakilas, A.

    2015-06-01

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5-6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  11. Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

    Science.gov (United States)

    Yamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Nakazawa, Satoshi; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-01-01

    Initial oxidation of gallium nitride (GaN) (0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of x-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy, and x-ray diffraction measurements. It was found that initial oxide formation tends to saturate at temperatures below 800 °C, whereas the selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth, leading to a rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also reveal that polycrystalline α- and β-phase Ga2O3 grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. We propose a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport and discuss the model on the basis of experimental findings.

  12. Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

    Science.gov (United States)

    Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

    2017-04-01

    We analyzed the metal organic vapor phase epitaxial growth mechanism of the III-nitride semiconductors GaN, AlN, and InN by first-principles calculations and thermodynamic analyses. In these analyses, we investigated the decomposition processes of the group III source gases X(CH3)3 (X = Ga, Al, In) at finite temperatures and determined whether the (CH3)2GaNH2 adduct can be formed or not. The results of our calculations show that the (CH3)2GaNH2 adduct cannot be formed in the gas phase in GaN metal organic vapor phase epitaxy (MOVPE), whereas, in AlN MOVPE, the formation of the (CH3)2AlNH2 adduct in the gas phase is exclusive. In the case of GaN MOVPE, trimethylgallium (TMG, [Ga(CH3)3]) decomposition into Ga gas on the growth surface with the assistance of H2 carrier gas, instead of the formation of the (CH3)2GaNH2 adduct, occurs almost exclusively. Moreover, in the case of InN MOVPE, the formation of the (CH3)2InNH2 adduct does not occur and it is relatively easy to produce In gas even without H2 in the carrier gas.

  13. Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Polyakov, A. Y. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Smirnov, N. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Yakimov, E. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pearton, S. J. [University of Florida, Gainesville, Florida 32611 (United States)

    2016-01-07

    Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10{sup 6 }cm{sup −2}, while in the seed region it was 10{sup 8 }cm{sup −2}. The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10{sup 15 }cm{sup −3} range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels.

  14. Molecular Dynamics Simulation of the Crystal Orientation and Temperature Influences in the Hardness on Monocrystalline Silicon

    Directory of Open Access Journals (Sweden)

    Hongwei Zhao

    2014-01-01

    Full Text Available A nanoindentation simulation using molecular dynamic (MD method was carried out to investigate the hardness behavior of monocrystalline silicon with a spherical diamond indenter. In this study, Tersoff potential was used to model the interaction of silicon atoms in the specimen, and Morse potential was used to model the interaction between silicon atoms in the specimen and carbon atoms in the indenter. Simulation results indicate that the silicon in the indentation zone undergoes phase transformation from diamond cubic structure to body-centred tetragonal and amorphous structure upon loading of the diamond indenter. After the unloading of the indenter, the crystal lattice reconstructs, and the indented surface with a residual dimple forms due to unrecoverable plastic deformation. Comparison of the hardness of three different crystal surfaces of monocrystalline silicon shows that the (0 0 1 surface behaves the hardest, and the (1 1 1 surface behaves the softest. As for the influence of the indentation temperature, simulation results show that the silicon material softens and adhesiveness of silicon increases at higher indentation temperatures.

  15. Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

    Directory of Open Access Journals (Sweden)

    Abraham Dandoussou

    2015-01-01

    Full Text Available The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the I-V characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data recorded in 2014 in Ngaoundere, Cameroon. The results show that the ideality factor can be considered as constant and equal to 1.2 for the monocrystalline silicon module. The diode reverse saturation current depends only on the temperature. And the series resistance decreases when the irradiance increases. The extracted values of these parameters contribute to the best modeling of a photovoltaic module which can help in the accurate extraction of the maximum power.

  16. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-12-11

    In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

  17. Large three-dimensional photonic crystals based on monocrystalline liquid crystal blue phases.

    Science.gov (United States)

    Chen, Chun-Wei; Hou, Chien-Tsung; Li, Cheng-Chang; Jau, Hung-Chang; Wang, Chun-Ta; Hong, Ching-Lang; Guo, Duan-Yi; Wang, Cheng-Yu; Chiang, Sheng-Ping; Bunning, Timothy J; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2017-09-28

    Although there have been intense efforts to fabricate large three-dimensional photonic crystals in order to realize their full potential, the technologies developed so far are still beset with various material processing and cost issues. Conventional top-down fabrications are costly and time-consuming, whereas natural self-assembly and bottom-up fabrications often result in high defect density and limited dimensions. Here we report the fabrication of extraordinarily large monocrystalline photonic crystals by controlling the self-assembly processes which occur in unique phases of liquid crystals that exhibit three-dimensional photonic-crystalline properties called liquid-crystal blue phases. In particular, we have developed a gradient-temperature technique that enables three-dimensional photonic crystals to grow to lateral dimensions of ~1 cm (~30,000 of unit cells) and thickness of ~100 μm (~ 300 unit cells). These giant single crystals exhibit extraordinarily sharp photonic bandgaps with high reflectivity, long-range periodicity in all dimensions and well-defined lattice orientation.Conventional fabrication approaches for large-size three-dimensional photonic crystals are problematic. By properly controlling the self-assembly processes, the authors report the fabrication of monocrystalline blue phase liquid crystals that exhibit three-dimensional photonic-crystalline properties.

  18. Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

    Energy Technology Data Exchange (ETDEWEB)

    Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-03-15

    One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    Science.gov (United States)

    Ghoneim, Mohamed T.; Fahad, Hossain M.; Hussain, Aftab M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Alfaraj, Nasir; Lizardo, Ernesto B.; Hussain, Muhammad M.

    2015-12-01

    In today's digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical "through silicon" micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

  20. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

    Science.gov (United States)

    Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

    2016-12-01

    Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

  1. Temperature dependent dielectric function and the E0 critical points of hexagonal GaN from 30 to 690 K

    Directory of Open Access Journals (Sweden)

    Tae Jung Kim

    2014-02-01

    Full Text Available The complex dielectric function ɛ and the E0 excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 μm thick GaN film deposited on a c-plane (0001 sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ⟨ɛ⟩. At low temperature sharp E0 excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.

  2. GaN three dimensional nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Dmitriev, V.; Irvin, K. [Cree Research, Inc., Durham, NC (United States); Zubrilov, A.; Tsvetkov, D.; Nikolaev, V. [Cree Research EED, St. Petersburg (Russian Federation); Jakobson, M.; Nelson, D.; Sitnikova, A. [A.F. Ioffe Inst., St. Petersburg (Russian Federation)

    1996-11-01

    The authors report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from {approximately}20 nm to more than 2 {micro}m. The average dot density ranged from 10{sup 7} to 10{sup 9} cm{sup {minus}2}. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

  3. Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

    OpenAIRE

    2016-01-01

    Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-i...

  4. Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy

    Science.gov (United States)

    Moldawer, Adam Lyle

    The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This PhD research addresses both the development of polar and non-polar GaN and AIN templates by Hydride Vapor Phase Epitaxy (HVPE) on sapphire and SiC substrates, as well as the growth and characterization of optoelectronic devices on these templates by molecular beam epitaxy (MBE). Polar and non-polar GaN templates have been grown in a vertical HVPE reactor on the C- and R-planes of sapphire respectively. The growth conditions have been optimized to allow the formation for thick (50um) GaN templates without cracks. These templates were characterized structurally by studying their surface morphologies by SEM and AFM, and their structure through XRD and TEM. The polar C-plane GaN templates were found to be atomically smooth. However, the surface morphology of the non-polar GaN films grown on the R-plane of sapphire were found to have a facetted surface morphology, with the facets intersecting at 120° angles. This surface morphology reflects an equilibrium growth, since the A-plane of GaN grows faster than the M-planes of GaN due to the lower atomic density of the plane. For the development of deep-UV optoelectronics, it is required to grow AIGaN quantum wells on AIN templates. However, since AIN is a high melting point material, such templates have to be grown at higher temperatures, close to half the melting point of the material (1500 °C). As these temperatures cannot be easily obtained by traditional furnace heating, an HVPE reactor has been designed to heat the substrate inductively to these temperatures. This apparatus has been used to grow high-quality, transparent AIN films

  5. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions.

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-22

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC(1-x)) buffer is demonstrated. The a-SixC(1-x) buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC(1-x) buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC(1-x) buffer. The C-rich SixC(1-x) favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC(1-x) buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC(1-x) buffer, the device deposited on C-rich SixC(1-x) buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively.

  6. Heat resistive dielectric multi-layer micro-mirror array in epitaxial lateral overgrowth gallium nitride.

    Science.gov (United States)

    Huang, Chen-Yang; Ku, Hao-Min; Liao, Wei-Tsai; Chao, Chu-Li; Tsay, Jenq-Dar; Chao, Shiuh

    2009-03-30

    Ta2O5 / SiO2 dielectric multi-layer micro-mirror array (MMA) with 3mm mirror size and 6mm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200 degrees C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200 degrees C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2:56 mm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light.

  7. Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals

    Science.gov (United States)

    Kojima, Kazunobu; Ikeda, Hirotaka; Fujito, Kenji; Chichibu, Shigefusa F.

    2017-07-01

    For rating unambiguous performance of a light-emitting semiconductor material, determination of the absolute quantum efficiency (AQE) of radiation, which is basically a product of internal quantum efficiency (IQE) and light-extraction efficiency, is the most delightful way. Here, we propose the use of omnidirectional photoluminescence (ODPL) spectroscopy for quantifying AQE of the near-band-edge (NBE) emission, in order to evaluate bulk GaN crystals and wafers. When the measurement was carried out in the air, the AQE showed a continuous decrease most likely due to the formation of extrinsic nonradiative recombination channels at the surface by photo-pumping. However, such an influence was suppressed by measuring ODPL in an inert ambient such as nitrogen or in vacuum. Consequently, AQE was revealed to depend on the photo-pumping density. The increase in AQE of the NBE emission caused by the increase in the excess carrier concentration was significant, indicating gradual saturation of nonradiative recombination centers in the bulk of GaN. The highest AQE value (8.22%) ever reported for the NBE emission of GaN at room temperature, which corresponds to IQE of 70.9%, was eventually obtained from the GaN wafer grown by hydride vapor phase epitaxy on a GaN seed crystal manufactured by the acidic ammonothermal method, when the cw photo-pumping density was 66 W/cm2.

  8. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nirwal, Varun Singh, E-mail: varun.nirwal30@gmail.com; Singh, Joginder; Gautam, Khyati; Peta, Koteswara Rao [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021 (India)

    2016-05-06

    We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10{sup −5} A to 7.31×10{sup −7} A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of R{sub s} decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

  9. Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    David Adolph

    2016-08-01

    Full Text Available We demonstrate crack-free ZnO/GaN distributed Bragg reflectors (DBRs grown by hybrid plasma-assisted molecular beam epitaxy using the same growth chamber for continuous growth of both ZnO and GaN without exposure to air. This is the first time these ZnO/GaN DBRs have been demonstrated. The Bragg reflectors consisted up to 20 periods as shown with cross-sectional transmission electron microscopy. The maximum achieved reflectance was 77% with a 32 nm wide stopband centered at 500 nm. Growth along both (0001 and (000 1 ̄ directions was investigated. Low-temperature growth as well as two-step low/high-temperature deposition was carried out where the latter method improved the DBR reflectance. Samples grown along the (0001 direction yielded a better surface morphology as revealed by scanning electron microscopy and atomic force microscopy. Reciprocal space maps showed that ZnO(000 1 ̄ /GaN reflectors are relaxed whereas the ZnO(0001/GaN DBRs are strained. The ability to n-type dope ZnO and GaN makes the ZnO(0001/GaN DBRs interesting for various optoelectronic cavity structures.

  10. Molecular beam epitaxy, MBE; Epitaxia por haces moleculares

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz Ruiz de Gopegui, A.

    2010-07-01

    The molecular beam epitaxy, MBE, is a physical technique of synthesis in which a sheet of a solid increases, in a chamber of ultra-high vacuum, the reaction of atomic or molecular beams of its elementary components in the vapor phase, the impact these on a monocrystalline substrate which is kept at proper temperature. Using this technique, films are obtained high purity and excellent crystalline quality, in which the composition and can be alternating layers control up to a limit of one atomic layer. In the beginning was dedicated only to the manufacture of III-V semiconductor heterostructures, but quickly transcended other material systems. It is an ideal technique for heterostructures considered as model systems in solid state physics (quantum wells, superlattices, quantum wires and dots ...) and for manufacturing devices with advanced new design. In addition, the current convergence of disciplines to the ubiquitous nano technology, the deep knowledge gained on the fundamental phenomena involved in MBE growth of very different systems materials, allows use of the technique beyond its intrinsic ability to control the process in the direction of growth, and apply it to obtain ordered nano structures and networks grounds on the nano scale. (author) 12 refs.

  11. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    Science.gov (United States)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  12. Molecular beam epitaxy for high-efficiency nitride optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Heffernan, J.; Kauer, M.; Windle, J.; Hooper, S.E.; Bousquet, V.; Zellweger, C.; Barnes, J.M. [Sharp Laboratories of Europe, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GB (United Kingdom)

    2006-06-15

    We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave threshold current of 125 mA, corresponding to a threshold current density of 5.7 kA cm{sup -2}. The lasers have a threshold voltage of 8.6 V and a lifetime of several minutes. We outline the further technical challenges associated with demonstrating lifetimes of several thousand hours and present an assessment of the potential of MBE as a growth method for commercial quality nitride optoelectronic devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Nitrides optoelectronic devices grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kauer, M.; Bousquet, V.; Hooper, S.E.; Barnes, J.M.; Windle, J.; Tan, W.S.; Heffernan, J. [Sharp Laboratories of Europe, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GB (United Kingdom)

    2007-01-15

    We report on the characteristics of our recent room temperature continuous-wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave (cw) threshold current of 110 mA, corresponding to a threshold current density of 5.5 kA cm{sup -2}. We report on our steps taken to reduce threshold voltage to 7 V. Lasers with uncoated facets have a maximum cw output power of 14 mW and a cw characteristic temperature T{sub 0} of 123 K. Cw laser lifetime vs. power dissipation data is presented, with a maximum lifetime of 2.6 hours for the best laser. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (112{sup -}2) GaN templates

    Energy Technology Data Exchange (ETDEWEB)

    Niehle, M., E-mail: niehle@pdi-berlin.de; Trampert, A., E-mail: trampert@pdi-berlin.de [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Albert, S.; Bengoechea-Encabo, A.; Calleja, E. [ISOM and Departamento de Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2015-03-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN(112{sup -}2) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  15. Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ¯ 2 ) GaN templates

    Science.gov (United States)

    Niehle, M.; Trampert, A.; Albert, S.; Bengoechea-Encabo, A.; Calleja, E.

    2015-03-01

    We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ¯ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  16. Electron tomography of (In,GaN insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 GaN templates

    Directory of Open Access Journals (Sweden)

    M. Niehle

    2015-03-01

    Full Text Available We present results of scanning transmission electron tomography on GaN/(In,GaN/GaN nanocolumns (NCs that grew uniformly inclined towards the patterned, semi-polar GaN( 11 2 ̄ 2 substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,GaN layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

  17. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  18. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  19. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  20. Epitaxial Cu{sub 2}ZnSnSe{sub 4} layers by annealing of Sn/Cu/ZnSe(001) precursors on GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Krämmer, Christoph, E-mail: Christoph.Kraemmer@kit.edu [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Sachs, Johannes [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Pfaffmann, Lukas [Laboratory for Electron Microscopy, KIT (Germany); Musiol, Timo; Lang, Mario; Gao, Chao [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Gerthsen, Dagmar [Laboratory for Electron Microscopy, KIT (Germany); Kalt, Heinz [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany); Powalla, Michael [Light Technology Institute, KIT (Germany); Zentrum für Sonnenenergie-und Wasserstoff-Forschung Baden-Württemberg (ZSW), 70565 Stuttgart (Germany); Hetterich, Michael [Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe (Germany)

    2015-05-01

    We report on the fabrication of epitaxial Cu{sub 2}ZnSnSe{sub 4} films by a two-step fabrication approach. An epitaxial ZnSe(001) layer on GaAs(001) is grown by molecular-beam epitaxy followed by sequential deposition of Cu and Sn. The Sn/Cu/ZnSe(001) precursor is then thermally annealed in a selenium atmosphere. Raman spectroscopy confirms the presence of the kesterite phase. Electron microscopy shows that the films exhibit monocrystalline regions of several micrometers in size with inclusions of smaller grains with a different chemical composition. The latter is confirmed by electron backscatter diffraction measurements which prove the conservation of the crystal orientation defined by the cubic ZnSe/GaAs(001) precursor structure throughout the whole CZTSe film. - Highlights: • Two-step fabrication approach to obtain epitaxial kesterite layers is presented. • Kesterite phase formation is confirmed by Raman spectroscopy. • SnSe{sub x} compounds are identified to be the main secondary phase. • Electron backscatter diffraction proves epitaxial orientation of the films.

  1. Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

    Science.gov (United States)

    Fiegl, G. F.; Bonora, A. C.

    1980-01-01

    The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

  2. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

    1985-01-01

    Individual, as well as multiple doses of /sup 27/Al/sup +/, /sup 31/P/sup +/, /sup 28/Si/sup +/, and /sup 28/Si/sup +/ and /sup 12/C/sup +/, were implanted into (100) oriented monocrystalline ..beta..-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of ..beta..-SiC via implantation of /sup 27/Al/sup +/ and /sup 31/P/sup +/ was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800/sup 0/C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed.

  3. Numerical analysis of monocrystalline silicon solar cells with fine nanoimprinted textured surface

    Science.gov (United States)

    Yoshinaga, Seiya; Ishikawa, Yasuaki; Araki, Shinji; Honda, Tatsuki; Jiang, Yunjiang; Uraoka, Yukiharu

    2017-02-01

    We investigated the surface reflectance of nanoimprinted textures on silicon. Zirconium oxide, which is a wide-bandgap inorganic dielectric material, was used as the texturing material. We performed several calculations to optimize the textures for the production of high-efficiency bulk-type monocrystalline silicon solar cells. Our analysis revealed that nanoimprinted textured solar cells exhibit a lower reverse saturation current density than a solar cell with a conventional etched texture. It was also confirmed that the photocarrier generation rate for a solar cell with a submicron-scale nanoimprinted texture has little dependence on the texture shape. Furthermore, the weighted average reflectance of an optimized nanoimprinted textured solar cell was substantially reduced to 3.72%, suggesting that texture formation by nanoimprint lithography is an extremely effective technology for producing high-efficiency solar cells at a low cost.

  4. Impact of temperature on performance of series and parallel connected mono-crystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Subhash Chander

    2015-11-01

    Full Text Available This paper presents a study on impact of temperature on the performance of series and parallel connected mono-crystalline silicon (mono-Si solar cell employing solar simulator. The experiment was carried out at constant light intensity 550 W/m2with cell temperature in the range 25–60 oC for single, series and parallel connected mono-Si solar cells. The performance parameters like open circuit voltage, maximum power, fill factor and efficiency are found to decrease with cell temperature while the short circuit current is observed to increase. The experimental results reveal that silicon solar cells connected in series and parallel combinations follow the Kirchhoff’s laws and the temperature has a significant effect on the performance parameters of solar cell.

  5. Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

    Science.gov (United States)

    Fiegl, G. F.; Bonora, A. C.

    1980-01-01

    The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

  6. Energy-resolved hot carrier relaxation dynamics in monocrystalline plasmonic nanoantennas

    CERN Document Server

    Méjard, Régis; Petit, Marlène; Bouhelier, Alexandre; Cluzel, Benoît; Demichel, Olivier

    2016-01-01

    Hot carriers are energetic photo-excited carriers driving a large range of chemico-physical mechanisms. At the nanoscale, an efficient generation of these carriers is facilitated by illuminating plasmonic antennas. However, the ultrafast relaxation rate severally impedes their deployment in future hot-carrier based devices. In this paper, we report on the picosecond relaxation dynamics of hot carriers in plasmonic monocrystalline gold nanoantennas. The temporal dynamics of the hot carriers is experimentally investigated by interrogating the nonlinear photoluminescence response of the antenna with a spectrally-resolved two-pulse correlation configuration. We measure time-dependent nonlinearity orders varying from 1 to 8, which challenge the common interpretation of multi-photon gold luminescence. We demonstrate that the relaxation of the photo-excited carriers depends of their energies relative to the Fermi level. We find a 60 % variation in the relaxation rate for electron-hole pair energies ranging from c.a....

  7. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

  8. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.

    Science.gov (United States)

    Kumar, Ashutosh; Heilmann, M; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M; Christiansen, Silke H; Kumar, Vikram; Singh, Rajendra

    2016-01-01

    The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.

  9. Growth and characterization of GaN thin film on Si substrate by thermionic vacuum arc (TVA)

    Science.gov (United States)

    Kundakçı, Mutlu; Mantarcı, Asim; Erdoğan, Erman

    2017-01-01

    Gallium nitride (GaN) is an attractive material with a wide-direct band gap (3.4 eV) and is one of the significant III-nitride materials, with many advantageous device applications such as high electron mobility transistors, lasers, sensors, LEDs, detectors, and solar cells, and has found applications in optoelectronic devices. GaN could also be useful for industrial research in the future. Chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputter, and pulsed laser deposition (PLD) are some of the methods used to fabricate GaN thin film. In this research, a GaN thin film grown on a silicon substrate using the thermionic vacuum arc (TVA) technique has been extensively studied. Fast deposition, short production time, homogeneity, and uniform nanostructure with low roughness can be seen as some of the merits of this method. The growth of the GaN was conducted at an operating pressure of 1× {{10}-6} \\text{Torr} , a plasma current 0.6 \\text{A} and for a very short period of time of 40 s. For the characterization process, scanning electron microscopy (SEM) was conducted to determine the structure and surface morphology of the material. Energy dispersive x-ray spectroscopy (EDX) was used to comprehend the elemental analysis characterization of the film. X-ray diffraction (XRD) was used to analyze the structure of the film. Raman measurements were taken to investigate the phonon modes of the material. The morphological properties of the material were analyzed in detail by atomic force microscopy (AFM).

  10. Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

    Science.gov (United States)

    Nagarajan, S.; Svensk, O.; Ali, M.; Naresh-Kumar, G.; Trager-Cowan, C.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

    2013-07-01

    High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

  11. Catalyst free self-organized grown high-quality GaN nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Aschenbrenner, T.; Kunert, G.; Freund, W.; Kruse, C.; Figge, S.; Hommel, D. [Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen (Germany); Schowalter, M.; Vogt, C.; Rosenauer, A. [Institute of Solid State Physics, Electron Microscopy, University of Bremen (Germany); Kalden, J.; Sebald, K.; Gutowski, J. [Institute of Solid State Physics, Semiconductor Optics, University of Bremen (Germany)

    2011-08-15

    Highly ordered GaN nanorods were grown self-organized and without catalyst on r-plane sapphire by molecular beam epitaxy while the AlN nucleation sites for the nanorods were provided by a nitridation process using a metal-organic vapor-phase epitaxy system. The growth window for the nanorod formation was analysed in detail and turned out to be very sensitive with respect to the growth temperature. The nanorods are symmetrically tilted with an inclination angle of 62 between the substrate and the nanorods. The mirror axis is the c-direction of the compact GaN layer surrounding the roots of the nanocolumns. Methods for the control of the nanorod density and the suppression of one nanorod growth direction are presented. The results indicate a diffusion based growth mechanism. Transmission electron microscopy studies and high resolution X-ray diffraction (HRXRD) polar plots reveal the epitaxial relationship between substrate, compact GaN layer and nanorods. The nanorods grow in c-direction and the side facets are m-planes. Transmission electron microscopic and optical analysis of the nanorods reveal the good structural and optical properties, respectively. A full width at half maximum (FWHM) of 1.2 meV of the donor-bound exciton emission was measured for both the ensemble and single free-standing nanorods. Successful n- and Mg-doping of nanorods was verified by a strong increase of the micro-photoluminescence intensity of the respective donor-bound and acceptor-bound exciton emission peak in comparison to an undoped sample. The background shows a secondary electron microscope image (angle of 10 between sample surface and electron beam) of the nanorods. Superimposed to the SEM image, a typical micro-photoluminescence spectrum of the excitonic emission of an ensemble at 25 K is presented. The donor-bound, acceptor-bound and free exciton lines are labelled with D{sup 0}X, A{sup 0}X and FX, respectively. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGa

  12. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    A.Y. Polyakov

    2017-03-01

    Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

  13. Theoretical study of gallium nitride molecules, GaN2 and GaN4.

    Science.gov (United States)

    Tzeli, Demeter; Theodorakopoulos, Giannoula; Petsalakis, Ioannis D

    2008-09-18

    The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.

  14. Molecular beam epitaxy of cubic III-nitrides on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    As, D.J.; Schikora, D.; Lischka, K. [Dept. of Physics, Univ. of Paderborn, Paderborn (Germany)

    2003-07-01

    Molecular beam epitaxy has successfully been used to grow crystalline layers of group III-nitrides (GaN, AlN and InN) with cubic (zinc-blende) structure on GaAs substrates. In this article, we discuss these efforts that, despite inherent difficulties due to the metastability of the c-III nitrides, led to substantial improvements of the structural, electrical and optical quality of these wide gap semiconductors. We review experimental work concerned with the epitaxy of c-GaN and the control of the growth process in-situ, the important issue of p- and n-type doping of c-GaN and investigations of the structural and optical properties of c-InGaN and c-AlGaN. (orig.)

  15. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    Science.gov (United States)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  16. Epitaxial hexagonal materials on IBAD-textured substrates

    Energy Technology Data Exchange (ETDEWEB)

    Matias, Vladimir; Yung, Christopher

    2017-08-15

    A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

  17. High efficiency back-contact back-junction thin-film monocrystalline silicon solar cells from the porous silicon process

    Science.gov (United States)

    Haase, F.; Kajari-Schröder, S.; Brendel, R.

    2013-11-01

    This work demonstrates the fabrication of a 45 μm thick back-contact back-junction thin-film monocrystalline silicon solar cell from the porous silicon process with an energy conversion efficiency of 18.9%. We demonstrate an efficiency improvement of 5.4% absolute compared to our prior record of 13.5% for back-contact back-junction thin-film monocrystalline silicon solar cells. This increase in efficiency is achieved by reducing the recombination at the base contact using a back surface field and by increasing the generation with a front texture. We investigate the loss mechanisms in the cell using finite element simulations. A free energy loss analysis based on experiments and simulations determines the dominating loss mechanisms. The efficiency loss by base recombination is 0.8% absolute and the loss by base contact recombination is 0.5% absolute in the 18.9% efficiency cell.

  18. Novel low-cost approach for removal of surface contamination before texturization of commercial monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gangopadhyay, U. [Electronics and Telecommunication Engineering Department, IC Design and Fabrication Centre, Jadavpur University, Kolkata 700032 (India); School of Information and Communication Engineering, Sungkyunkwan University, 300, Chun-Chun dong, Jangan-gu, Suwon, 440-746 (Korea); Dhungel, S.K.; Yi, J. [School of Information and Communication Engineering, Sungkyunkwan University, 300, Chun-Chun dong, Jangan-gu, Suwon, 440-746 (Korea); Mondal, A.K. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 71103 (India); Saha, H. [Electronics and Telecommunication Engineering Department, IC Design and Fabrication Centre, Jadavpur University, Kolkata 700032 (India)

    2007-07-23

    This paper reports a novel approach on the surface treatment of monocrystalline silicon solar cells using an inorganic chemical, sodium hypochlorite (NaOCl) that has some remarkable properties. The treatment of contaminated crystalline silicon wafer with hot NaOCl helps the removal of organic contaminants due to its oxidizing properties. The objective of this paper is to establish the effectiveness of this treatment using hot NaOCl solution before the saw damage removal step of the conventional NaOH texturing approach. A comparative study of surface morphology and FTIR analyses of textured monocrystalline silicon surfaces with and without NaOCl pre-treatment is also reported. The process could result in a significant low cost approach viable for cleaning silicon wafers on a mass production scale. (author)

  19. Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)

    Science.gov (United States)

    Müller, Marcus; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Krylyuk, Sergiy; Debnath, Ratan; Ha, Jong-Yoon; Wen, Baomei; Blanchard, Paul; Motayed, Abhishek; King, Matthew R.; Davydov, Albert V.; Christen, Jürgen

    2016-05-01

    Large arrays of GaN core-shell microrods were fabricated on Si(111) substrates applying a combined bottom-up and top-down approach which includes inductively coupled plasma (ICP) etching of patterned GaN films grown by metal-organic vapor phase epitaxy (MOVPE) and selective overgrowth of obtained GaN/Si pillars using hydride vapor phase epitaxy (HVPE). The structural and optical properties of individual core-shell microrods have been studied with a nanometer scale spatial resolution using low-temperature cathodoluminescence spectroscopy (CL) directly performed in a scanning electron microscope (SEM) and in a scanning transmission electron microscope (STEM). SEM, TEM, and CL measurements reveal the formation of distinct growth domains during the HVPE overgrowth. A high free-carrier concentration observed in the non-polar \\{ 1\\bar{1}00\\} HVPE shells is assigned to in-diffusion of silicon atoms from the substrate. In contrast, the HVPE shells directly grown on top of the c-plane of the GaN pillars reveal a lower free-carrier concentration.

  20. 探测器级NTD硅单晶的研制%Manufacture of NTD Monocrystalline Silicon for Detectors

    Institute of Scientific and Technical Information of China (English)

    李强

    2001-01-01

    介绍了探测器级 NTD 硅单晶的制作工艺,并对如何保证探测器级 NTD 硅单晶的质量进行了讨论。%The process to manufacture the NTD monocrystalline silicon for detectors was described, and the problem how to ensure its quality was discussed.

  1. Thermopower of monocrystalline RESn/sub 3/ compounds (RE = La, Ce, Pr, Nd, Sm, Eu, and Gd)

    Energy Technology Data Exchange (ETDEWEB)

    Kletowski, Z. (Polska Akademia Nauk, Wroclaw. Inst. Niskich Temperatur i Badan Strukturalnych)

    1982-03-16

    The temperature dependence of the thermopower measured in monocrystalline RESn/sub 3/ compounds (RE = La, Ce, Pr, Nd, Sm, Eu, and Gd) has been investigated between 80 and 300 K. It was found that (1) the thermopower is always positive, (2) it differs widely between the compounds in temperature dependence, and (3) CeSn/sub 3/ has a giant thermopower with a well marked maximum of 61 ..mu..V/K at 150 K.

  2. Selective MBE-growth of GaN nanowires on patterned substrates

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, Timo; Gotschke, Tobias; Stoica, Toma; Limbach, Friedrich; Calarco, Raffaella [Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH (Germany); JARA-Fundamentals of Future Information Technology (Germany)

    2010-07-01

    Self assembled III-nitride nanowires are promising candidates for optoelectronic devices. The precise control of size and position of the nanowires is crucial for further applications. We demonstrate the selective growth of arranged GaN nanowires by plasma-assisted molecular beam epitaxy on an AlN buffer. The position of each nanowire is controlled by a thin silicon oxide mask, patterned by electron beam lithography. The dependence of selectivity and nanowire morphology on the growth parameters and mask properties are investigated. We change the substrate temperature and the Ga-flux, retaining nitrogen rich conditions, which are suitable for self-assembled nanowire growth. Samples with different masks are produced, varying the thickness and the layout. The diameter of the holes and their distance from each other vary across the pattern. We discuss the influence of these parameters on the nanowire growth and morphology.

  3. The influence of Mg doping on the nucleation of self-induced GaN nanowires

    Directory of Open Access Journals (Sweden)

    F. Limbach

    2012-03-01

    Full Text Available GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than without Mg. During nanowire nucleation the Ga desorption was monitored in-situ by line-of-sight quadrupole mass spectrometry for various substrate temperatures. Nucleation energies of 4.0±0.3 eV and 3.2±0.3 eV without and with Mg supply were deduced, respectively. This effect has to be taken into account for the fabrication of nanowire devices and could be employed to tune the NW areal density.

  4. From evidence of strong light-matter coupling to polariton emission in GaN microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Sellers, I.R.; Semond, F.; Leroux, M.; Massies, J. [CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France); Zamfirescu, M. [LENS, Dipartimento di Fisica, Universita di Firenze, 50019 Sesto Fiorentino (Italy); National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG-36, 077125 Bucharest (Romania); Stokker-Cheregi, F.; Gurioli, M.; Vinattieri, A. [LENS, Dipartimento di Fisica, Universita di Firenze, 50019 Sesto Fiorentino (Italy); Disseix, P.; Leymarie, J.; Reveret, F.; Malpuech, G.; Vasson, A. [LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex (France)

    2007-06-15

    We present both experimental and theoretical results which outline our development of the molecular beam epitaxy of GaN microcavities on (111) silicon. In particular we show that although in this material system the strong-light matter coupling regime can be observed at 300 K even with relatively low quality factor structures (Q = 60) in reflectivity measurements, it is necessary to increase the Q -factor by at least a factor of two to observe strong coupling in the emission. For an optimized microcavity structure (Q = 160), polaritonic emission is observed at 300 K, with the origin of the broadened luminescence features confirmed by co-incident reflectivity measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Movement of basal plane dislocations in GaN during electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yakimov, E. B. [Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Vergeles, P. S. [Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Polyakov, A. Y. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Lee, In-Hwan [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pearton, S. J. [University of Florida, Gainesville, Florida 32611 (United States)

    2015-03-30

    The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.

  6. Optical investigation of strain in Si-doped GaN films

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Paramo, J.; Calleja, J. M.; Sanchez-Garcia, M. A.; Calleja, E.

    2001-06-25

    The effects of Si doping on the growth mode and residual strain of GaN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy are studied by Raman scattering and photoluminescence. As the Si concentration increases a progressive decrease of the high-energy E{sub 2} mode frequency is observed, together with a redshift of the excitonic emission. Both effects indicate an enhancement of the biaxial tensile strain of thermal origin for increasing doping level, which is confirmed by x-ray diffraction measurements. Beyond Si concentrations of 5{times}10{sup 18}cm{sup {minus}3} both the phonon frequency and the exciton emission energy increase again. This change indicates a partial strain relaxation due to a change in the growth mode. {copyright} 2001 American Institute of Physics.

  7. Low threshold monocrystalline Nd:(Gd,Lu)2O3 channel waveguide laser

    NARCIS (Netherlands)

    Kahn, Andreas; Heinrich, Sebastian; Kühn, Henning; Petermann, Klaus; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; Huber, Günther

    2009-01-01

    We report the first waveguide laser based on a rare-earth-doped sesquioxide. A 2 μm thick lattice matched Nd(0.5%):${(Gd, Lu)_2O_3}$ film with a nearly atomically flat surface has been epitaxially grown on a $Y_2O_3$ substrate, using pulsed laser deposition. The film has been structured with reactiv

  8. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    Science.gov (United States)

    1990-07-01

    that the BGaN film remained predominantly single crystal, but shows both a normal cubic [110] pattern and a second hexagonal pattern [0110]. By contrast...27 Transmission electron microscopy (iEM) was used (Hitachi H-800) to more closely examine the microstructural evolution of the BN/ BGaN /GaN epitaxial...area diffraction (SAD) also showed the BGaN layer to be a mixture of cubic and wurtzitic phases. This layer was heavily faulted. The latter phenomenon

  9. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and Subsequent Fabrication of Superlattice Structures Using AlN and InN

    Science.gov (United States)

    1990-12-01

    Laboratories, Inc. 3. Structural Analysis Reflection high-energy electron diffraction performed during growth indicated that the BGaN film remained...was used (Hitachi H-800) to more closely examine the microstructural evolution of the BN/ BGaN /GaN epitaxial films. Cross-section TEM specimens were... BGaN layer to be a mixture of cubic and wurtzitic phases. This layer was heavily faulted. The latter phenomenon is to be expected given the high

  10. A study on phase transformation of monocrystalline silicon due to ultra-precision polishing by molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Lin Zhang

    2012-12-01

    Full Text Available A three-dimensional molecular dynamics (MD simulation is conducted to investigate the material removal mechanism of monocrystalline silicon by mechanical polishing at atomistic scale with diamond abrasives. By monitoring relative positions of atoms in the monocrystalline silicon specimen, the microstructure transformation of monocrystalline silicon is clearly identified and analyzed. The phase transformation is accomplished under extreme conditions with high temperature and huge hydrostatic pressure, and as a result the silicon microstructure transforms from the four-coordinated diamond cubic structure (Si-I to the six-coordinated body-centered tetragonal structure (β-silicon. The values of local pressure and temperature are consistent with previous experimental results. In addition, the force between the diamond abrasive and specimen indicates the occurrence of phase transformation in the specimen. The potential energy of each atom is also calculated, which provides us an effective approach to analyze the energy variation of atoms in the mechanism of material deformation and the formation of machined surface after ultra-precision polishing.

  11. Elimination of surface band bending on N-polar InN with thin GaN capping

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmík, J., E-mail: Jan.Kuzmik@savba.sk; Haščík, Š.; Kučera, M.; Kúdela, R.; Dobročka, E. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravska cesta 9, 841 04 Bratislava (Slovakia); Adikimenakis, A. [Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion, Crete (Greece); Mičušík, M. [Polymer Institute, Slovak Academy of Sciences, Dúbravska cesta 9, 845 41 Bratislava (Slovakia); Gregor, M.; Plecenik, A. [Faculty of Mathematics, Physics and Informatics, Comenius University in Bratislava, Mlynská dolina, 842 48 Bratislava (Slovakia); Georgakilas, A. [Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion, Greece and Department of Physics, University of Crete, 71203 Heraklion (Greece)

    2015-11-09

    0.5–1 μm thick InN (0001) films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to construct near-surface (GaN)/InN energy profiles, which is combined with deconvolution of In3d signal to trace the presence of InN native oxide for different types of polarity and capping. Downwards surface energy band bending was observed on bare samples with native oxide, regardless of the polarity. It was found that the In-polar InN surface is most readily oxidized, however, with only slightly less band bending if compared with the N-polar sample. On the other hand, InN surface oxidation was effectively mitigated by GaN capping. Still, as confirmed by ultra-violet photo-electron spectroscopy and by energy band diagram calculations, thin GaN cap layer may provide negative piezoelectric polarization charge at the GaN/InN hetero-interface of the N-polar sample, in addition to the passivation effect. These effects raised the band diagram up by about 0.65 eV, reaching a flat-band profile.

  12. Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Li, X. F.; Chen, Z. Q., E-mail: chenzq@whu.edu.cn; Liu, C. [Department of Physics, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan 430072 (China); Zhang, H. J.; Kawasuso, A. [Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

    2015-02-28

    Wurtzite GaN films grown by hydride vapor phase epitaxy were implanted with 280 keV C{sup +} ions to a dose of 6 × 10{sup 16 }cm{sup −2}. Vacancy-type defects in C{sup +}-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter to a high value of 1.08–1.09 after implantation indicates introduction of very large vacancy clusters. Post-implantation annealing at temperatures up to 800 °C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000 °C. The other measurements such as X-ray diffraction, Raman scattering and Photoluminescence all indicate severe damage and even disordered structure induced by C{sup +}-implantation. The disordered lattice shows a partial recovery after annealing above 800 °C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C{sup +}-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.

  13. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  14. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

    Energy Technology Data Exchange (ETDEWEB)

    Borysiuk, J., E-mail: jolanta.borysiuk@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland); Sakowski, K.; Muziol, G.; Krukowski, S. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Dróżdż, P. [Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); Korona, K. P. [Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland); Sobczak, K. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Skierbiszewski, C. [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland); TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw (Poland); Kaminska, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw (Poland)

    2016-07-07

    Molecular beam epitaxy growth and basic physical properties of quaternary AlInGaN layers, sufficiently thick for construction of electron blocking layers (EBL), embedded in ternary InGaN layers are presented. Transmission electron microscopy (TEM) measurement revealed good crystallographic structure and compositional uniformity of the quaternary layers contained in other nitride layers, which are typical for construction of nitride based devices. The AlInGaN layer was epitaxially compatible to InGaN matrix, strained, and no strain related dislocation creation was observed. The strain penetrated for limited depth, below 3 nm, even for relatively high content of indium (7%). For lower indium content (0.6%), the strain was below the detection limit by TEM strain analysis. The structures containing quaternary AlInGaN layers were studied by time dependent photoluminescence (PL) at different temperatures and excitation powers. It was shown that PL spectra contain three peaks: high energy donor bound exciton peak from the bulk GaN (DX GaN) and the two peaks (A and B) from InGaN layers. No emission from quaternary AlInGaN layers was observed. An accumulation of electrons on the EBL interface in high-In sample and formation of 2D electron gas (2DEG) was detected. The dynamics of 2DEG was studied by time resolved luminescence revealing strong dependence of emission energy on the 2DEG concentration. Theoretical calculations as well as power-dependence and temperature-dependence analysis showed the importance of electric field inside the structure. At the interface, the field was screened by carriers and could be changed by illumination. From these measurements, the dynamics of electric field was described as the discharge of carriers accumulated on the EBL.

  15. Long wavelength GaN blue laser (400-490nm) development

    Energy Technology Data Exchange (ETDEWEB)

    DenBaars, S P; Abare, A; Sink, K; Kozodoy, P; Hansen, M; Bowers, J; Mishra, U; Coldren, L; Meyer, G

    2000-10-26

    Room temperature (RT) pulsed operation of blue nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates was achieved. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In{sub 0.21}Ga{sub 0.79}N (2.5nm)/In{sub 0.07}Ga{sub 0.93}N (5nm) InGaN MQW. The threshold current density was reduced by a factor of 2 from 10 kA/cm{sup 2} for laser diodes grown on sapphire substrates to 4.8 kA/cm{sub 2} for laser diodes grown on lateral epitaxial overgrowth (LEO) GaN on sapphire. Lasing wavelengths as long as 425nm were obtained. LEDs with emission wavelengths as long as 500nm were obtained by increasing the Indium content. These results show that a reduction in nonradiative recombination from a reduced dislocation density leads to a higher internal quantum efficiency. Further research on GaN based laser diodes is needed to extend the wavelength to 490nm which is required for numerous bio-detection applications. The GaN blue lasers will be used to stimulate fluorescence in special dye molecules when the dyes are attached to specific molecules or microorganisms. Fluorescein is one commonly used dye molecule for chemical and biological warfare agent detection, and its optimal excitation wavelength is 490 nm. InGaN alloys can be used to reach this wavelength.

  16. Irradiation-induced defects in InN and GaN studied with positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Reurings, Floris; Tuomisto, Filip [Department of Applied Physics, Aalto University, Espoo (Finland); Egger, Werner; Loewe, Benjamin [Institut fuer Angewandte Physik und Messtechnik, Universitaet der Bundeswehr Muenchen, Neubiberg (Germany); Ravelli, Luca [Dipartimento di Fisica, Universita degli studi di Trento, Povo (Italy); Sojak, Stanislav [Department of Nuclear Physics and Technology, Slovak University of Technology in Bratislava (Slovakia); Liliental-Weber, Zuzanna; Jones, Rebecca E.; Yu, Kin M.; Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Schaff, William J. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY (United States)

    2010-05-15

    We use positron annihilation to study 2-MeV {sup 4}He{sup +} irradiated and subsequently rapid-thermal-annealed InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapour deposition. The irradiation fluences were in the range 5 x 10{sup 14}-2 x 10{sup 16}cm{sup -2}. In vacancies are introduced in the irradiation at a low rate of 100 cm{sup -1}, with their concentration saturating in the mid-10{sup 17} cm{sup -3} range at an irradiation fluence of 2 x 10{sup 15} cm{sup -2}. The annealing, performed at temperatures between 425 and 475 C, is observed to result in an inhomogeneous redistribution of the In vacancies. The behaviour is opposite to GaN, where Ga vacancies are introduced at a much higher rate of 3600 cm{sup -1} showing no detectable saturation. About half of the Ga vacancies are found to recover in the annealing, in agreement with previous studies, while the remaining Ga vacancies undergo no spatial redistribution. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Positron annihilation study of HVPE grown thick GaN layers

    Energy Technology Data Exchange (ETDEWEB)

    Misheva, M. [Department of Physics, Sofia University, Blvd. J. Boucher 5, 1164 Sofia (Bulgaria); Larsson, H.; Monemar, B. [Department of Physics and Measurement Technology, Linkoeping University, 58183 Linkoeping (Sweden); Gogova, D. [Department of Physics and Measurement Technology, Linkoeping University, 58183 Linkoeping (Sweden); Central Laboratory of Solar Energy and New Energy Sources at the Bulg. Acad. Sci., Blvd. Tzarigradsko shose 72, 1784 Sofia (Bulgaria)

    2005-04-01

    Single-crystalline GaN layers with a thickness up to 330 {mu}m were grown by hydride vapor phase epitaxy on basal plane sapphire at gallium stable conditions in a bottom-fed vertical reactor at atmospheric pressure. Positron annihilation spectroscopy experiments were implemented in order to identify native point defects in the as-grown non-intentionally doped n-type GaN. Comparatively low concentrations of Ga vacancy related defects in the order of 10{sup 16} to 10{sup 17} cm{sup -3} were extracted from the positron annihilation spectroscopy data. The Ga vacancy defect concentration was related to the intensity of the yellow photoluminescence band centered at 2.2 eV. The influence of the growth rate on the Ga vacancy related defect concentration was investigated. A trend of decreasing of the defect concentration with increasing of layer thickness is observed, which correlates with improving crystalline quality with the thickness. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Identification of Ag and Cd photoluminescence in $^{111}$Ag-doped GaN

    CERN Document Server

    Stötzler, A; Deicher, M

    1999-01-01

    In order to unambiguously identify the chemical nature of Cd and Ag related optical transitions in GaN, epitaxial GaN layers were implanted with the radioactive isotope $^{111}$Ag which decays into stable $^{111}$Cd. This chemical transmutation was monitored by photoluminescence (PL) spectroscopy. Being an element specific property, the half-life of this decay was used to establish the chemical assignment of the optical transitions to a specific defect. We found that the Ag related transitions consist of a series of four single lines (1.610, 1.600, 1.594, and 1.573 eV), each accompanied by two phonon replicas separated by 63 meV. Cd produces two PL bands centered at 2.7 and 3.2 eV. Additional Cd-related single transitions at 3.341, 3.328, and 3.249 eV have been observed. Exponential fits to the PL intensities yield half-lives of $t_{1/2}^{Ag}$= (7.61$\\pm$0.27) d and $t_{1/2}^{Cd}$=(7.60$\\pm$0.27) d, respectively, in good agreement with the half-life of $^{111}$Ag of 7.45 d. (13 refs).

  19. Zinc-blende MnN bilayer formation on the GaN(111) surface

    Science.gov (United States)

    Gutierrez-Ojeda, S. J.; Guerrero-Sánchez, J.; Garcia-Diaz, R.; Ramirez-Torres, A.; Takeuchi, Noboru; Cocoletzi, Gregorio H.

    2017-07-01

    Atomic layers of manganese nitride, deposited on the cubic gallium nitride (111) surface, are investigated using spin polarized periodic density functional theory calculations. The adsorption of a manganese atom has been evaluated at different high symmetry sites. Incorporation into the GaN substrate by replacing gallium atoms drives the formation of a site in which the displaced Ga atom forms bonds with Ga atoms at the surface. This energetically favorable configuration shows a ferromagnetic alignment. Surface formation energy calculations demonstrate that when a full Mn ML is incorporated into the GaN structure, a Ga ML on top of a MnN bilayer may be formed for very Ga-rich conditions. On the other hand, when a full Mn ML is deposited on top of the nitrogen terminated surface, an epitaxial MnN bilayer is formed with antiferromagnetic characteristics. Density of states and partial density of states are reported to show the antiferromagnetic alignment in both structures. This behavior is mainly induced by the Mn-d orbitals.

  20. HVPE GaN wafers with improved crystalline and electrical properties

    Science.gov (United States)

    Freitas, J. A.; Culbertson, J. C.; Mahadik, N. A.; Sochacki, T.; Iwinska, M.; Bockowski, M. S.

    2016-12-01

    The quest for low cost GaN substrates with optimized crystalline and electrical properties continues to fuel the search for a fast growth method to produce commercial wafers that will allow the fabrication of devices capable of achieving high performance at high power and/or high frequency. Thick films grown by hydride vapor phase epitaxy (HVPE) on Ammono substrates in addition to reproducing the high crystalline quality of those substrates show significant reduction in free carrier concentration. This work presents a detailed spectroscopic, X-ray diffraction, and Raman spectroscopy imaging investigation of thick freestanding HVPE GaN films deposited on HVPE/Ammono-GaN templates. The results demonstrate that they are stress-free, and have a nearly uniform and relatively lower residual background doping, in addition to high crystalline quality. This result is extremely important, because it demonstrates the usefulness of this new type of HVPE-GaN substrate to fabricate highly efficient optoelectronic and electronic devices.

  1. Fabrication and characterization of GaN junction field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.; Lester, L.F.; Baca, A.G.; Shul, R.J.; Chang, P.C.; Willison, C.L.; Mishra, U.K.; Denbaars, S.P.; Zolper, J.C.

    2000-01-11

    Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurement showed an f{sub T} of 6 GHz and an f{sub max} of 12 GHz. Both the I{sub D} and the g{sub m} were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

  2. Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, S.V.; Staddon, C.R.; Powell, R.E.L.; Akimov, A.V.; Kent, A.J.; Foxon, C.T. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2012-03-15

    In the current study we have demonstrated the feasibility of a novel approach for the growth of GaN layers, namely plasma-assisted electroepitaxy (PAEE). In this method, we have combined the advantages of the plasma process for producing high concentrations of active N species in the Ga melt with the advantages of electroepitaxy in transferring the N species from the Ga surface to the growth interface, without spontaneous crystallisation on the surface or within the solution. We have designed and built a new growth chamber which allows us to combine the plasma-assisted molecular beam epitaxy process with a liquid phase electroepitaxy system. We have demonstrated that it is possible to grow GaN layers by PAEE at growth temperatures as low as {proportional_to}650 {sup o}C and with low nitrogen overpressures of {proportional_to}3 x 10{sup -5} Torr. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Growth of GaN based structures on focused ion beam patterned templates

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, Y.; Tottereau, O.; Nguyen, L. [Centre de Recherche sur l' Heteroepitaxie et ses Application, UPR-CNRS, Valbonne (France); Ramdani, M.; Soltani, A.; Boucherit, M.; Troadec, D.; Lo, F.Y.; Hu, Y.Y.; Ludwig, A.; Wieck, A.D. [Centre de Recherche sur l' Heteroepitaxie et ses Application, UPR-CNRS, Valbonne (France); Institut d' Electronique, de Microelectronique et de Nanotechnologie, Cite Scientifique, Villeneuve d' Ascq (France); Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum (Germany)

    2011-05-15

    Focused ion beam technique is a powerful tool for defining patterns within a semiconductor film. In this paper, we show that it is possible to realize patterns such as disks and columns within thick GaN templates and that it is compatible with the regrowth of GaN based heterostructures. We study the effect of the pattern size and shape on the regrowth by molecular beam epitaxy. We show that the growth using ammonia as the nitrogen source with flux at temperature optimized for 2-dimensional growth leads to the apparition of well defined growth planes. We show that the development of these planes is dependent with the initial pattern size and shape. These results confirm the difficulty for realizing micro or nano-columns with axial heterostructures. At the opposite, these growth conditions seem favourable for core-shell heterostructures column with well defined m-plane and eventually a-plane lateral facets. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. InN quantum dots on GaN nanowires grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Zhaoxia; Lindgren, David; Johansson, Jonas; Gustafsson, Anders; Borgstroem, Magnus T.; Monemar, Bo; Samuelson, Lars [Solid State Lighting Center, the Nanometer Structure Consortium, Lund University (Sweden); Ek, Martin; Wallenberg, L. Reine [Center for Analysis and Synthesis/nCHREM, Lund University (Sweden); Ohlsson, B. Jonas [QuNano AB, Lund (Sweden)

    2014-04-15

    In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si{sub 3}N{sub 4} as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I{sub 1}-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Photo-induced changes of the surface band bending in GaN: Influence of growth technique, doping and polarity

    Science.gov (United States)

    Winnerl, Andrea; Pereira, Rui N.; Stutzmann, Martin

    2017-05-01

    In this work, we use conductance and contact potential difference photo-transient data to study the influence of the growth technique, doping, and crystal polarity on the kinetics of photo-generated charges in GaN. We found that the processes, and corresponding time scales, involved in the decay of charge carriers generated at and close to the GaN surface via photo-excitation are notably independent of the growth technique, doping (n- and p-types), and also crystal polarity. Hence, the transfer of photo-generated charges from band states back to surface states proceeds always by hopping via shallow defect states in the space-charge region (SCR) close to the surface. Concerning the charge carrier photo-generation kinetics, we observe considerable differences between samples grown with different techniques. While for GaN grown by metal-organic chemical vapor deposition, the accumulation of photo-conduction electrons results mainly from a combined trapping-hopping process (slow), where photo-generated electrons hop via shallow defect states to the conduction band (CB), in hydride vapor phase epitaxy and molecular beam epitaxy materials, a faster direct process involving electron transfer via CB states is also present. The time scales of both processes are quite insensitive to the doping level and crystal polarity. However, these processes become irrelevant for very high doping levels (both n- and p-types), where the width of the SCR is much smaller than the photon penetration depth, and therefore, most charge carriers are generated outside the SCR.

  6. Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106 cm-2 range by novel two-side hydride vapor-phase epitaxial growth

    Science.gov (United States)

    Fujikura, Hajime; Konno, Taichiro

    2017-10-01

    Large GaN templates with high flatness (i.e., negligible wafer bowing and smooth as-grown surfaces) and low threading dislocation densities (TTDs) were fabricated by a novel two-side hydride vapor-phase epitaxial (HVPE) growth, beginning with deposition of polycrystalline GaN on the rear side of the wafer. Appropriate gas-flow management realized by our homemade HVPE system permitted the growth of a GaN layer with a smooth as-grown surface and excellent thickness uniformity on the front surfaces of 4- or 6-inch patterned sapphire substrates (PSSs). However, when the grown thickness exceeded 20 μm, single-side HVPE-growth induced fractures in GaN crystals. The fracture resistance of the GaN increased markedly when it was in a cleavage-resistant polycrystalline form (poly-GaN), permitting its growth to a thickness of 100 μm. In the presence of a back-side poly-GaN layer, extremely thick GaN crystal layers could be grown on the front side without fractures. An 80-μm-thick GaN template fabricated by two-side growth on a 4-inch PSS had a device-quality surface, negligible bowing, and low TDD (7 × 106 cm-2). Issues of high fabrication costs, unavailability of large-size wafers, and large off-angle variations associated with native GaN wafers could be overcome by using our high-quality GaN templates as alternative substrates.

  7. Effects of growth temperature modulated by HCl flow rate on the surface and crystal qualities of thick GaN by HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Lubing [Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wu Jiejun, E-mail: wujiejun@opt.elec.mie-u.ac.jp [Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Xu Ke; Yang Zhijian; Zhang Guoyi [Research Center for Wide-gap Semiconductors, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)

    2009-06-30

    We studied the influence of the growth temperature and HCl flow rate on the morphological evolution of crack-free thick GaN films by using a home-made horizontal hydride vapor phase epitaxy on sapphire substrates. Optical difference microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathodoluminescence (CL) were carried out to reveal the surface property of the GaN epilayer. It was found that the higher growth temperature is a key factor to obtain mirror, colorless and flat GaN surface. However, this key effect of temperature was modulated by HCl flow rate (HCl > 15 sccm). The surface RMS roughness was reduced from 206 to 2.51 nm for 10 {mu}m x 10 {mu}m scan area when GaN was grown at 1070 deg. C with HCl flow rate up to 30 sccm. These samples also reduced their (0 0 0 2) FWHM result from 1000 to 300 arcsec and showed a strong near-band-edge peak in CL spectra. Results indicated that growth temperature influence growth velocities on different crystalline planes, which will lead to the different morphologies obtained. High growth temperature can improve the lateral growth rate of vertical {l_brace}1 1 - 2 0{r_brace} facets and reduce the vertical growth rate of top {l_brace}0 0 0 1{r_brace} facet combined with higher HCl flow rate, which leads to completely coalescence of surface.

  8. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    Science.gov (United States)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  9. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode

    Directory of Open Access Journals (Sweden)

    Azadeh Ansari

    2015-03-01

    Full Text Available This work describes a novel architecture to realize high-performance gallium nitride (GaN bulk acoustic wave (BAW resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111 substrate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W/silicon dioxide (SiO2 forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer. A metal electrode can be deposited and patterned on top of the GaN layer. This method enables vertical piezoelectric actuation of the GaN layer using its largest piezoelectric coefficient (d33 for thickness-mode resonance. Having a bottom electrode also results in a higher coupling coefficient, useful for the implementation of acoustic filters. Growth of GaN on Si enables releasing the device from the frontside using isotropic xenon difluoride (XeF2 etch and therefore eliminating the need for backside lithography and etching.

  10. A molecular dynamics study of void initiation and growth in monocrystalline and nanocrystalline copper

    Science.gov (United States)

    Traiviratana, Sirirat

    MD simulations in monocrystalline and nanocrystalline copper were carried out with LAMMPS to reveal void growth mechanisms. The specimens were subjected to both tensile uniaxial and hydrostatic strains; the results confirm that the emission of (shear) loops is the primary mechanism of void growth. The expansion of the loops and their cross slip leads to the severely work hardened layer surrounding a growing void. Calculations were carried out on voids with different sizes, and a size dependence of the stress response to emitted dislocations was observed, in disagreement with the Gurson model [1] which is scale independent. The growth of voids simulated by MD is compared with the Cocks-Ashby constitutive model and significant agreement is found. The density of geometrically-necessary dislocations as a function of void size is calculated based on the emission of shear loops and their outward propagation. Calculations were also carried out for a void at the interface between two grains sharing a tilt boundary. The results show similar dislocation behaviors. A code that uses Voronoi tessellation for constructing nanocrystalline structures was developed and used to prepare the structures for simulations. Nanocrystal simulations reveal grain sliding and grain rotation as the nanocrystal deformed. Voids were nucleated at grain junctions and grew to coalescence as dislocations accommodated the material transfer. A code that can be used during post-processing to extract useful dislocation information from MD simulation data was partially developed and proved the feasibility of automatically analyzing dislocations.

  11. Effect of Shock Compression Method on the Defect Substructure in Monocrystalline Copper

    Energy Technology Data Exchange (ETDEWEB)

    Cao, B Y; Meyers, M A; Lassila, D H; Schneider, M S; Kad, B K; Huang, C X; Xu, Y B; Kalantar, D H; Remington, B A

    2005-02-17

    Monocrystalline copper samples with orientations of [001] and [221] were shocked at pressures ranging from 20 GPa to 60 GPa using two techniques: direct drive lasers and explosively driven flyer plates. The pulse duration for these techniques differed substantially: 2 ns for the laser experiments and 1.1-1.4 {micro}s for the flyer-plate experiments. The residual microstructures were dependent on orientation, pressure, and shocking method. The much shorter pulse duration in laser shock yielded recovery microstructures with no or limited dislocation motion. For the flyer-plate experiments, the longer pulse duration allow shock-generated defects to reorganize into lower energy configurations. Calculations show that the post shock cooling occurs in a time scale of 0.2 s for laser shock and 1000 s for plate-impact shock, propitiating recovery and recrystallization conditions for the latter. At the higher pressure level extensive recrystallization was observed in the plate-impact samples, while it was absent in laser shock. An effect that is proposed to contribute significantly to the formation of recrystallized regions is the existence of micro-shearbands, which increase the local temperature.

  12. The effect of surface microstructure on the optical reflectance of monocrystalline silicon

    Science.gov (United States)

    Wang, Quanji; Zhou, Weidong; Chen, Fangfang; Yang, Ruizhao

    2016-12-01

    Surface texturing is an important technique used to enhance the light absorption by forming certain microstructures on silicon surface. In this article, four different microstructures, based on repeat units of triangles, perpendicular grooves, hexagons and parallel grooves respectively, were fabricated directly on the surface of monocrystalline silicon wafers by using femtosecond laser texturing technique. Compare to the silicon wafers that were not treated by laser, a significant decrease of light reflectance can be observed for those laser etched silicon surfaces. And the treated silicon surface with triangles texture was found to have the lowest relative reflectance of ∼20% in the wavelength range from 400 to 1000 nm, if the textured surfaces were irradiated using the same laser fabrication condition. In addition, the relative reflectance of laser etched silicon surfaces with similar repeat unit but different structural period was investigated as well. The results show that the relative reflectance of the treated surface increases along with the increase of structural period size. These results obtained here can provide a useful guide for fabricating silicon-based optoelectronic devices with a more excellent anti-reflective performance.

  13. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    Science.gov (United States)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing.

  14. Effect of crystal plane orientation on tribochemical removal of monocrystalline silicon

    Science.gov (United States)

    Xiao, Chen; Guo, Jian; Zhang, Peng; Chen, Cheng; Chen, Lei; Qian, Linmao

    2017-01-01

    The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing. PMID:28084433

  15. Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

    Science.gov (United States)

    Stolz, A.; Cho, E.; Dogheche, E.; Androussi, Y.; Troadec, D.; Pavlidis, D.; Decoster, D.

    2011-04-01

    The waveguide properties are reported for wide bandgap gallium nitride (GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55 μm, corresponding to the best value reported so far for a GaN-based waveguide.

  16. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Lupina, L.; Zoellner, M. H.; Dietrich, B.; Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); Niermann, T.; Lehmann, M. [Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin (Germany); Thapa, S. B.; Haeberlen, M.; Storck, P. [SILTRONIC AG, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt, Oder (Germany); BTU Cottbus, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

    2015-11-16

    We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

  17. InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

    Science.gov (United States)

    Lv, Wenbin; Wang, Lai; Wang, Jiaxing; Hao, Zhibiao; Luo, Yi

    2012-11-07

    InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N2 to H2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.

  18. Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV

    Science.gov (United States)

    Shokhovets, S.; Kirste, L.; Leach, J. H.; Krischok, S.; Himmerlich, M.

    2017-07-01

    We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral range between 0.6 eV and 6 eV. They have been determined by combined spectroscopic ellipsometry, optical retardation, and transmission measurements on a series of m- and c-plane bulk substrates prepared from crystals grown by hydride vapor phase epitaxy. The accuracy of the derived DFs is estimated by investigation of the role of mosaicity-related crystal imperfections, self-consistency test based on a Kramers-Kronig analysis, and examination of the influence of kind of overlayer. We also briefly discuss optical properties of a highly defective near-surface layer of GaN crystals introduced by their mechanical polishing.

  19. Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy

    Science.gov (United States)

    Belyaev, A. E.; Strelchuk, V. V.; Nikolenko, A. S.; Romanyuk, A. S.; Mazur, Yu I.; Ware, M. E.; DeCuir, E. A., Jr.; Salamo, G. J.

    2013-10-01

    Confocal micro-Raman spectroscopy was applied to study the cleaved surface of vertical GaN Gunn-diode structure grown by molecular-beam epitaxy. The analysis of lateral scanning along the cleaved edge reveals the depth profile of elastic strain, quality of the crystal structure, and the concentration of charge carriers. Results are compared with that of axial confocal Raman depth profiling normal to the structure's surface. Decrease of compressive strain near the cleaved edge in the direction from the substrate to the structure's surface and in the growth plane towards the cleaved edge is shown. The decrease in charge carrier concentration in the undoped n0-GaN channel region in comparison with the n+-GaN contact region is identified. Peculiarities of the resulting spatial profiles of free charge carriers and their correlation with the initial doping profile are discussed.

  20. Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

    Science.gov (United States)

    Okumura, H.; Hamaguchi, H.; Koizumi, T.; Balakrishnan, K.; Ishida, Y.; Arita, M.; Chichibu, S.; Nakanishi, H.; Nagatomo, T.; Yoshida, S.

    1998-06-01

    Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N 2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic Al xGa 1- xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

  1. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    Science.gov (United States)

    Dasgupta, Sansaptak; Nidhi, Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-04-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher ft and fmax in high electron mobility transistors (HEMTs). N-polar (0001¯) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  2. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

    Science.gov (United States)

    Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon

    2013-08-01

    We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of ˜7.8 ×107 cm-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (11bar 20) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks.

  3. Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy

    Science.gov (United States)

    Duc, Tran Thien; Pozina, Galia; Amano, Hiroshi; Monemar, Bo; Janzén, Erik; Hemmingsson, Carl

    2016-07-01

    Deep levels in Mg-doped GaN grown by metal organic chemical vapor deposition (MOCVD), undoped GaN grown by MOCVD, and halide vapor phase epitaxy (HVPE)-grown GaN have been studied using deep level transient spectroscopy and minority charge carrier transient spectroscopy on Schottky diodes. One hole trap, labeled HT1, was detected in the Mg-doped sample. It is observed that the hole emission rate of the trap is enhanced by increasing electric field. By fitting four different theoretical models for field-assisted carrier emission processes, the three-dimensional Coulombic Poole-Frenkel (PF) effect, three-dimensional square well PF effect, phonon-assisted tunneling, and one-dimensional Coulombic PF effect including phonon-assisted tunneling, it is found that the one-dimensional Coulombic PF model, including phonon-assisted tunneling, is consistent with the experimental data. Since the trap exhibits the PF effect, we suggest it is acceptorlike. From the theoretical model, the zero field ionization energy of the trap and an estimate of the hole capture cross section have been determined. Depending on whether the charge state is -1 or -2 after hole emission, the zero field activation energy Ei 0 is 0.57 eV or 0.60 eV, respectively, and the hole capture cross section σp is 1.3 ×10-15c m2 or 1.6 ×10-16c m2 , respectively. Since the level was not observed in undoped GaN, it is suggested that the trap is associated with an Mg related defect.

  4. The role of NH3 and hydrocarbon mixtures in GaN pseudo-halide CVD: a quantum chemical study.

    Science.gov (United States)

    Gadzhiev, Oleg B; Sennikov, Peter G; Petrov, Alexander I; Kachel, Krzysztof; Golka, Sebastian; Gogova, Daniela; Siche, Dietmar

    2014-11-01

    The prospects of a control for a novel gallium nitride pseudo-halide vapor phase epitaxy (PHVPE) with HCN were thoroughly analyzed for hydrocarbons-NH3-Ga gas phase on the basis of quantum chemical investigation with DFT (B3LYP, B3LYP with D3 empirical correction on dispersion interaction) and ab-initio (CASSCF, coupled clusters, and multireference configuration interaction including MRCI+Q) methods. The computational screening of reactions for different hydrocarbons (CH4, C2H6, C3H8, C2H4, and C2H2) as readily available carbon precursors for HCN formation, potential chemical transport agents, and for controlled carbon doping of deposited GaN was carried out with the B3LYP method in conjunction with basis sets up to aug-cc-pVTZ. The gas phase intermediates for the reactions in the Ga-hydrocarbon systems were predicted at different theory levels. The located π-complexes Ga…C2H2 and Ga…C2H4 were studied to determine a probable catalytic activity in reactions with NH3. A limited influence of the carbon-containing atmosphere was exhibited for the carbon doping of GaN crystal in the conventional GaN chemical vapor deposition (CVD) process with hydrocarbons injected in the gas phase. Our results provide a basis for experimental studies of GaN crystal growth with C2H4 and C2H2 as auxiliary carbon reagents for the Ga-NH3 and Ga-C-NH3 CVD systems and prerequisites for reactor design to enhance and control the PHVPE process through the HCN synthesis.

  5. Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

    Science.gov (United States)

    Inatomi, Yuya; Kangawa, Yoshihiro; Ito, Tomonori; Suski, Tadeusz; Kumagai, Yoshinao; Kakimoto, Koichi; Koukitu, Akinori

    2017-07-01

    The composition pulling effect in metalorganic vapor-phase InGaN epitaxy was theoretically investigated by thermodynamic analysis. The excess energies of biaxial-strained In x Ga1- x N were numerically calculated using empirical interatomic potentials considering different situations: (i) coherent growth on GaN(0001), (ii) coherent growth on In0.2Ga0.8N(0001), and (iii) bulk growth. Using the excess energies, the excess chemical potentials of InN and GaN alloys were computed. Our results show that compressive strain suppresses In incorporation, whereas tensile strain promotes it. Moreover, assuming chemical equilibrium, the relationship between the solid composition and the growth conditions was predicted. The results successfully reproduced the typical composition pulling effect.

  6. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy.

    Science.gov (United States)

    Bagnall, Kevin R; Wang, Evelyn N

    2016-06-01

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E2 high and A1 (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse

  7. Study of low-frequency excess noise transport in Ga-face and N-face GaN thin films grown on intermediate-temperature buffer layer by RF-MBE

    Energy Technology Data Exchange (ETDEWEB)

    Fong, W.K.; Leung, B.H.; Xie, J.Q.; Surya, C. [Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)

    2002-08-16

    We report detailed investigations of low-frequency excess noise in both Ga-faced and N-faced GaN thin films grown by RF-plasma molecular beam epitaxy. The GaN epilayers were grown on double buffer layers, and consisted of a thick intermediate-temperature buffer layer (ITBL) deposited at 690 C and a conventional thin buffer layer. Deposition of the thin buffer layer is used to control the polarity of the GaN epilayer. Low-frequency excess noise was studied in detail to examine the effects on the ITBL on the noise. The low-frequency noise is attributed to the correlated fluctuations in number and mobility of carriers, arising from the capture and emission by localized states. Our experimental results show that the polarity of the GaN epilayer and the utilization of ITBL have strong influence on the defect density of the GaN material. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

  8. Gallium Nitride (GaN) High Power Electronics (FY11)

    Science.gov (United States)

    2012-01-01

    for HPE GaN high electron mobility transistors ( HEMTs ) compared to SiC metal-oxide-semiconductor field effect transistors (MOSFETs). Although a few...Figure 16. Asymmetric rocking curve for an HVPE film grown on an HVPE substrate. ............19 Figure 17. Schematic of a GaN /AlGaN HEMT structure grown...frequency (RF) HEMTs . These considerable investments can be leveraged for GaN HPE. Some people are concerned about the relative scarcity of gallium

  9. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The

  10. Temperature Dependence of GaN HEMT Small Signal Parameters

    Science.gov (United States)

    2011-11-01

    original work is properly cited. This study presents the temperature dependence of small signal parameters of GaN /SiC HEMTs across the 0–150◦C range...the performance of GaN /SiC device, two state-of-the-art AlGaN/ GaN HEMT devices were characterized at −25, 25, 75, and 125◦C base plate (on-wafer...number. 1. REPORT DATE NOV 2011 2. REPORT TYPE 3. DATES COVERED 00-00-2011 to 00-00-2011 4. TITLE AND SUBTITLE Temperature Dependence of GaN HEMT

  11. Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

    Science.gov (United States)

    Muziol, Grzegorz; Turski, Henryk; Siekacz, Marcin; Grzanka, Szymon; Perlin, Piotr; Skierbiszewski, Czesław

    2016-09-01

    A novel design consisting of a thick InGaN waveguide is proposed to fully eliminate leakage to the GaN substrate in nitride laser diodes. The design is based on the effective refractive index engineering and does not require the commonly used thick AlGaN claddings. The conditions required to fully eliminate the optical leakage are discussed. Experimental results from eight blue laser diodes with different indium contents and thicknesses of the InGaN waveguide grown by plasma-assisted molecular beam epitaxy are presented to validate the theoretical results.

  12. Photoionization of monocrystalline CVD diamond irradiated with ultrashort intense laser pulse

    Science.gov (United States)

    Lagomarsino, Stefano; Sciortino, Silvio; Obreshkov, Boyan; Apostolova, Tzveta; Corsi, Chiara; Bellini, Marco; Berdermann, Eleni; Schmidt, Christian J.

    2016-02-01

    Direct laser writing of conductive paths in synthetic diamond is of interest for implementation in radiation detection and clinical dosimetry. Unraveling the microscopic processes involved in laser irradiation of diamond below and close to the graphitization threshold under the same conditions as the experimental procedure used to produce three-dimensional devices is necessary to tune the laser parameters to optimal results. To this purpose a transient currents technique has been used to measure laser-induced current signals in monocrystalline diamond detectors in a wide range of laser intensities and at different bias voltages. The current transients vs time and the overall charge collected have been compared with theoretical simulations of the carrier dynamics along the duration and after the conclusion of the 30 fs laser pulse. The generated charge has been derived from the collected charge by evaluation of the lifetime of the carriers. The plasma volume has also been evaluated by measuring the modified region. The theoretical simulation has been implemented in the framework of the empirical pseudopotential method extended to include time-dependent couplings of valence electrons to the radiation field. The simulation, in the low-intensity regime, I ˜1 TW /cm2 , predicts substantial deviation from the traditional multiphoton ionization, due to nonperturbative effects involving electrons from degenerate valence bands. For strong field with intensity of about 50 TW /cm2, nonadiabatic effects of electron-hole pair excitation become prominent with high carrier densities eventually causing the optical breakdown of diamond. The comparison of theoretical prediction with experimental data of laser-generated charge vs laser energy density yields a good quantitative agreement over six orders of magnitude. At the highest intensities the change of slope in the trend is explained taking into account the dependence of the optical parameters and the carrier mobility on plasma

  13. The Effects of Cells Temperature Increment and Variations of Irradiation for Monocrystalline Photovoltaic

    Science.gov (United States)

    Fuad Rahman Soeharto, Faishal; Hermawan

    2017-04-01

    Photovoltaic cell technology has been developed to meet the target of 17% Renewable Energy in 2025 accordance with Indonesia Government Regulation No. 5 2006. Photovoltaic cells are made of semiconductor materials, namely silicon or germanium (p-n junction). These cells need the light that comes from solar irradiation which brings energy photons to convert light energy into electrical energy. It is different from the solar heater that requires heat energy or thermal of sunlight that is normally used for drying or heating water. Photovoltaic cells requires energy photons to perform the energy conversion process, the photon energy can be derived from sunlight. Energy photon is taken from the sun light along with the advent of heat due to black-body radiation, which can lead to temperature increments of photovoltaic cells. Increment of 1°C can decreased photovoltaic cell voltage of up to 2.3 mV per cell. In this research, it will be discuss the analysis of the effect of rising temperatures and variations of irradiation on the type monocrystalline photovoltaic. Those variation are analyzed, simulated and experiment by using a module of experiment. The test results show that increment temperature from 25° C to 80° C at cell of photovoltaic decrease the output voltage of the photovoltaic cell at 4.21 V, and it also affect the power output of the cell which decreases up to 0.7523 Watt. In addition, the bigger the value of irradiation received by cell at amount of 1000 W / m2, produce more output power cells at the same temperature.

  14. Amphoteric arsenic in GaN

    CERN Document Server

    Wahl, U; Araújo, J P; Rita, E; Soares, JC

    2007-01-01

    We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As$\\scriptstyle_{Ga}\\,$ " anti-sites ” are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called “ miscibility gap ” in ternary GaAs$\\scriptstyle_{1-x}$N$\\scriptstyle_{x}$ compounds, which cannot be grown with a single phase for values of $x$ in the range 0.1<${x}$< 0.99.

  15. Research on the effects of machining-induced subsurface damages on mono-crystalline silicon via molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Hongwei, E-mail: hwzhao@jlu.edu.cn [College of Mechanical Science and Engineering, Jilin University, 5988 Renmin Street, Changchun, Jilin 130025 (China); Shi Chengli; Zhang Peng; Zhang Lin; Huang Hu; Yan Jiwang [College of Mechanical Science and Engineering, Jilin University, 5988 Renmin Street, Changchun, Jilin 130025 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer MD simulations of nano-cutting process are carried out to obtain machining-induced subsurface with diamond cutting tools. Black-Right-Pointing-Pointer After cutting, the crystal lattice reconstructed and led to the formation of the machined surface. Black-Right-Pointing-Pointer The mechanical properties of the pristine and machining-induced subsurface Si are studied by means of nanoindentation. Black-Right-Pointing-Pointer Nanoindentation results show that the hardness of the machined surface was smaller than mono-crystalline Si. - Abstract: Nanoindentation simulation via molecular dynamic (MD) method was carried out to investigate the characteristics of machining-induced subsurface damage of mono-crystalline silicon with a spherical diamond indenter. In this study, MD simulations of nano-cutting process were carried out firstly to cut through the specimen's surface with diamond cutting tools of different edge radius of 0 nm, 3 nm and 5 nm respectively. Then, MD simulation of nanoindentation on the machined surface was carried out. Tersoff potential was used to model the interaction of Si atoms, and the interaction between Si and C atoms was modeled by Morse potential. Simulational results indicate that during cutting process, the specimen undergo plastic deformation and phase transformation. After cutting process, the crystal lattice reconstructs and the residual amorphous layers lead to the formation of the machined surface. Nanoindentation results show that the hardness of the machined surface is smaller than mono-crystalline Si. So in order to get accurate properties of the pristine silicon or other semiconductor materials via experiments, the amorphous phase should be completely removed or it would influence the mechanical properties of the pristine materials.

  16. Kinetics of AlGaN metal-organic vapor phase epitaxy for deep-UV applications

    Science.gov (United States)

    Lobanova, Anna; Yakovlev, Eugene; Jeschke, Joerg; Knauer, Arne; Weyers, Markus

    2016-05-01

    Al x Ga1- x N layers with high aluminum content of x ˜ 0.68-0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal-organic vapor phase epitaxy. Growth trends are analyzed by reaction-transport modeling in a wide range of growth conditions. Gas-phase nucleation resulting in both Al and Ga consumption into nanoparticles is a major mechanism affecting the growth efficiencies of AlN and GaN. Process windows suitable to grow multiple quantum wells (MQWs) for deep UV applications are found for a range of pressures, temperatures, and V/III ratios.

  17. Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

    Institute of Scientific and Technical Information of China (English)

    CHEN; Jun(陈俊); ZHANG; Shuming(张书明); ZHANG; Baoshun(张宝顺); ZHU; Jianjun(朱建军); FENG; Gan(冯淦); DUAN; Lihong(段俐宏); WANG; Yutian(王玉田); YANG; Hui(杨辉); ZHENG; Wenchen(郑文琛)

    2003-01-01

    The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

  18. Coating curly carbon nanotubes with monocrystalline Zn(BO2)2 and the mechanism of straightening the tubes

    Institute of Scientific and Technical Information of China (English)

    LIU; Jinzhang; YAN; Pengxun; YUE; Guanghui

    2006-01-01

    We overgrew single-crystalline Zn(BO2)2 coatings on carbon nanotubes (CNTs) for the first time. Scanning electron microscopy and transmission electron microscopy analyses revealed that the carbon nanotube-zinc borate composite rods are from tens to hundreds of nm in diameter. It is notable that the original curly tubes were straightened by the monocrystalline coatings. In addition, the crystal nucleation and growth on the surface of CNT were explained. We set a two-dimensional model, which is based on our experimental result, to qualitatively explain the mechanism of straightening the curly tubes by coating them with single-crystals.

  19. Rare Earth Doped GaN Laser Structures Using Metal Modulated Epitaxy

    Science.gov (United States)

    2015-03-30

    Doped Gallium Nitride by Plasma Assisted MBE, Ph. D. Thesis in Electrical and Computer Engineering, 2007, Georgia Institute of Technology, Atlanta...PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: ...... ...... Inventions (DD882) Scientific Progress Gallium nitride is a well-known wide bandgap III/V...Rui Wang for generously sharing his knowledge and experience in MBE, SIMS and nitride semiconductors. The discussions I was fortunate enough to have

  20. Preparation and Characterization of GaN Nanowires

    Institute of Scientific and Technical Information of China (English)

    薛成山; 杨莺歌; 马洪磊; 庄惠照; 马瑾

    2003-01-01

    GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission-electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX centre to valence band.

  1. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  2. Silicon—a new substrate for GaN growth

    Indian Academy of Sciences (India)

    S Pal; C Jacob

    2004-12-01

    Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But these substrates are costly and insulating in nature and also are not available in large diameter. Silicon can meet the requirements for a low cost and conducting substrate and will enable integration of optoelectronic or high power electronic devices with Si based electronics. But the main problem that hinders the rapid development of GaN devices based on silicon is the thermal mismatch of GaN and Si, which generates cracks. In 1998, the first MBE grown GaN based LED on Si was made and now the quality of material grown on silicon is comparable to that on sapphire substrate. It is only a question of time before Si based GaN devices appear on the market. This article is a review of the latest developments in GaN based devices on silicon.

  3. Synthesis of GaN films on porous silicon substrates

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates. GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering.Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS.The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FTIR)spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.

  4. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  5. Nonlinear characterization of GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng, E-mail: ccachi@163.com [National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-11-15

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 {mu}m and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 {mu}m to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  6. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    Motivation: Preparation of GaN virtual substrates on large-scale Si wafers is intensively pursued as a cost-effective approach for high power/high frequency electronics (HEMT's etc.) and optoelectronic applications (LED, LASER). However, the growth of high quality GaN layers on Si is hampered by several difficulties mainly related to a large lattice mismatch (-17%) and a huge difference in the thermal expansion coefficient (56%). As a consequence, GaN epitaxial layers grown on Si substrates show a high number of defects (threading dislocations etc.), which severely deteriorate the overall quality of the GaN films. Additionally, due to the different thermal expansion coefficients of the substrate and the film, um-thick GaN layers crack during post-growth cooling. To solve these integration problems, different semiconducting (e.g. AlN, GaAs, ZnO, HfN) and insulating (e.g. Al{sub 2}O{sub 3}, MgO, LiGaO{sub 2}) buffer layers, separating the Si substrate from the GaN film, are applied. Goal: In this thesis, a novel buffer approach for the integration of GaN on Si is proposed and investigated. The new approach employs Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bilayer templates as a step-graded buffer to reduce the lattice mismatch between GaN and the Si(111) substrate. According to the bulk crystal lattices, since the Y{sub 2}O{sub 3} has an in-plane lattice misfit of -2% to Si, Sc{sub 2}O{sub 3} -7% to Y{sub 2}O{sub 3}, the lattice misfit between GaN and the substrate can be theoretically reduced by about 50% from -17% (GaN/Si) to -8% (GaN/Sc{sub 2}O{sub 3}). Experimental: The GaN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) heterostructures are prepared in a multichamber molecular beam epitaxy system on 4 inch Si(111) wafers. In order to obtain complete information on the structural quality of the oxide buffer as well as the GaN layer, synchrotron- and laboratory-based X-ray diffraction, transmission electron microscopy and photoluminescence measurements are performed. The

  7. GaN: Defect and Device Issues

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  8. First results for custom-built low-temperature (4.2 K) scanning tunneling microscope/molecular beam epitaxy and pulsed laser epitaxy system designed for spin-polarized measurements

    Science.gov (United States)

    Foley, Andrew; Alam, Khan; Lin, Wenzhi; Wang, Kangkang; Chinchore, Abhijit; Corbett, Joseph; Savage, Alan; Chen, Tianjiao; Shi, Meng; Pak, Jeongihm; Smith, Arthur

    2014-03-01

    A custom low-temperature (4.2 K) scanning tunneling microscope system has been developed which is combined directly with a custom molecular beam epitaxy facility (and also including pulsed laser epitaxy) for the purpose of studying surface nanomagnetism of complex spintronic materials down to the atomic scale. For purposes of carrying out spin-polarized STM measurements, the microscope is built into a split-coil, 4.5 Tesla superconducting magnet system where the magnetic field can be applied normal to the sample surface; since, as a result, the microscope does not include eddy current damping, vibration isolation is achieved using a unique combination of two stages of pneumatic isolators along with an acoustical noise shield, in addition to the use of a highly stable as well as modular `Pan'-style STM design with a high Q factor. First 4.2 K results reveal, with clear atomic resolution, various reconstructions on wurtzite GaN c-plane surfaces grown by MBE, including the c(6x12) on N-polar GaN(0001). Details of the system design and functionality will be presented.

  9. Stress and density of defects in Si-doped GaN

    Energy Technology Data Exchange (ETDEWEB)

    Chine, Z.; Rebey, A.; Touati, H.; Jani, B.El [Unite de Recherche sur l' Heteroepitaxie et Applications, Faculte des Sciences, Monastir 5000 (Tunisia); Goovaerts, E. [Physics Department, University of Antwerp (U.I.A), Universiteitsplein 1, 2610 Wilrijk-Antwerpen (Belgium); Oueslati, M. [Unite de Recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences, Tunis 1002 (Tunisia); Laugt, S. [Centre de Recherche sur l' Heteroepitaxie et Applications, CNRS, Rue Bernard Gregory, 06560 Valbonne (France)

    2006-06-15

    We report a study by photoluminescence (PL), Raman scattering, and highly resolved X-ray diffraction (HRXRD) of a series of Si-doped n-type GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire (0001) with the carrier concentration of 2.3 x 10{sup 17}-9 x 10{sup 18} cm{sup -3}. We found that the band gap reduction deduced from the PL spectra analysis is due to both band gap narrowing (BGN) effect and change of the nature of stress in the GaN:Si layers. The HRXRD spectra show that at high Si-doping levels (>1.6 x 10{sup 18} cm{sup -3}) the GaN films become under tensile stress. Progressive decreases of the E{sub 2} Raman mode frequency with Si concentration confirm this observation. The stress induced E{sub 2} mode frequency shift is estimated to 1.6 cm{sup -1}/GPa. Additionally, dislocation densities are determined by HRXRD by employing a model that uses the line width of X-ray rocking curves. Atomic force microscopy (AFM) is also used to investigate the defect surface structures of GaN:Si layers which are dominated by pinned steps and surface depressions related to threading dislocations. We find that dislocation densities given by AFM measurements are in agreement with those obtained from rocking curve line widths. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

    Science.gov (United States)

    Xu, Dongwei; Zapol, Peter; Stephenson, G. Brian; Thompson, Carol

    2017-04-01

    The surface orientation can have profound effects on the atomic-scale processes of crystal growth and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane (0001) and m-plane (01 1 ¯ 0 ) surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation, we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for the m- and c-plane, respectively.

  11. Fabrication and Characterization of Micro-membrane GaN Light Emitting Diodes

    KAUST Repository

    Liao, Hsien-Yu

    2015-05-01

    Developing etching of GaN material system is the key to device fabrications. In this thesis, we report on the fabrication of high throughput lift-off of InGaN/GaN based micro-membrane light emitting diode (LED) from sapphire substrate using UV-assisted photoelectroless chemical (PEsC) etching. Unlike existing bandgap selective etching based on unconventional sacrificial layer, the current hydrofluoric acid based wet etching process enables the selective etching of undoped GaN layer already incorporated in standard commercial LED structures, thus attaining the leverage on high performance device design, and facile wet process technology. The lift-off micro-membrane LED showed 16% alleviated quantum efficiency droop under 200 mA/cm2 current injection, demonstrating the advantage of LED epitaxy exfoliation from the lattice-mismatched sapphire substrate. The origin of the performance improvement was investigated based on non-destructive characterization methods. Photoluminescence (PL) characterization showed a 7nm peak emission wavelength shift in the micro-membrane LED compared to the GaN-on-Sapphire LED. The Raman spectroscopy measurements correlate well with the PL observation that a 0.86 GPa relaxed compressive biaxial strain was achieved after the lift-off process. The micro-membrane LED technology enables further heterogeneous integration for forming pixelated red, green, blue (RGB) display on flexible and transparent substrate. The development of discrete and membrane LEDs using nano-fiber paper as the current spreading layer was also explored for such integration.

  12. Growth and Microstructure of GaN on (111) Si

    Science.gov (United States)

    Follstaedt, D. M.; Han, J.; Provencio, P.; Fleming, J.

    1998-10-01

    GaN grown on (111) Si by MOCVD was examined by TEM. This structure is of interest for possible integration of short-wavelength optical emission with Si microelectronics. A rotating disc reactor with TMGa, TMAl and ammonia precursors was used to first grow an 30 nm-thick AlN buffer on the Si at 1080^oC, followed by GaN at 1060^oC. The resulting 2 μm layer appeared smooth by in situ reflectance, but developed a high density of cracks when cooled to room temperature due to the difference in thermal expansions of GaN and Si. Between the cracks, cross-section and plan-view TEM identified the orientation as (0001)GaN parallel (111)Si, with [11-20]GaN parallel [1-10]Si. A high density of threading dislocations (4 to 8x10^9/cm^2) was found and determined to be 2/3 pure edge and 1/3 mixed (edge + screw) in character. A low density (10^8/cm^2) of nanotubes was also identified. This defect microstructure is much like that of GaN on sapphire. The thin AlN buffer was continuous and consists of 20 to 40 nm grains, with some exhibiting slight misorientations. A few dislocations threading the GaN layer could be traced to an interface between the AlN grains. The continuous thin layer indicates that the AlN buffer "wets" Si, whereas thin GaN layers are discontinuous on sapphire; 0.4 μm thickness of GaN is needed for a continuous layer.

  13. Novel approach to the growth and characterization of aligned epitaxial gallium nitride nanowires

    Science.gov (United States)

    Henry, Tania Alicia

    Nanowire devices are potential building blocks for complex electronic circuitry, however, challenges such as in-place alignment, precise positioning and nanowire device integration need to be addressed. In this work selective area grown (SAG), micron sized gallium nitride (GaN) mesas were used as growth substrates for lateral epitaxial GaN nanowire arrays. The thermodynamically stable mesa facets provide a crystallographic match for directed nanowire synthesis by minimizing the surface energy at the interface between the nanowire and substrate Nanowires grow from the sidewalls of GaN mesas forming parallel and hexagonal networks. Alignment occurs in the nonpolar m-axis and semipolar directions respectively. Gallium nitride nanowires are interconnected between thermodynamically stable and smooth pyramidal (10ll) , and (1l22) surfaces of adjacent GaN mesas, and they also grow from a single mesa to form free-standing nanowire cantilevers. The synthesis of lateral free-standing nanowires has led to exciting studies of their structural, electrical, and optical properties. Characterization of the electrical properties is carried out by in situ probing of single nanowires on the growth substrate inside a scanning electron microscope (SEM). The current transport is found to be largely dominated by thermionic field emission and Fowler-Nordheim tunneling, and is significantly limited by a large contact resistance at the probe-nanowire interface. The carrier concentration and mobilities of the probed nanowires are extracted and are in agreement with standard field effects transistors (FETs) fabricated from nanowires grown using similar growth conditions. These results reveal that electrical probing of lateral GaN nanowires is a reliable means of characterizing their electrical properties once the interface resistance between the probe and nanowire is considered. The optical properties of the nanowires were investigated. Photon emission at 3.26 eV dominated the

  14. Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

    Science.gov (United States)

    Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

    2016-04-01

    We report on metalorganic vapor phase epitaxy (MOVPE) of distributed Bragg reflectors (DBR) applying a periodic modulation of the GaN doping concentration only. The doping modulation changes the refractive index of GaN via the Burstein-Moss-effect. MOVPE growth of highly doped GaN:Ge and modulation of the dopant concentration by at least two orders of magnitude within few nanometers is required to achieve a refractive index contrast of 2-3%. Such modulation characteristic is achieved despite the presence of Ge memory effects and incorporation delay. We realized DBRs with up to 100 layer pairs by combining GaN:Ge with a nominal doping concentration of 1.6×1020 cm-3 as low-refractive index material with unintentionally doped GaN as high-refractive index layer. Scanning transmission electron microscope images reveal DBR structures with abrupt interfaces and homogenous layer thicknesses in lateral and vertical direction. Reflectance measurements of DBRs designed for the blue and near UV-spectral region show a narrow stopband with a maximum reflectivity of 85% at 418 nm and even 95% at 370 nm. InGaN/GaN multi-quantum well structures grown on top of such DBRs exhibit narrow emission spectra with linewidths below 3 nm and significantly increased emission intensity.

  15. InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

    Science.gov (United States)

    Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

    2016-07-01

    InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

  16. Confocal Raman depth-scanning spectroscopic study of phonon-plasmon modes in GaN epilayers

    Science.gov (United States)

    Strelchuk, V. V.; Bryksa, V. P.; Avramenko, K. A.; Valakh, M. Ya.; Belyaev, A. E.; Mazur, Yu. I.; Ware, M. E.; DeCuir, E. A.; Salamo, G. J.

    2011-06-01

    Coupled longitudinal-optical (LO)-phonon-plasmon excitations were studied using confocal micro-Raman spectroscopy. The high-quality Si-doped GaN epilayers were grown in a Gunn diode structure on (0001) sapphire substrates by plasma assisted molecular beam epitaxy. Depth-profiled Raman spectra exhibit a spatial variation of both low, ω-, and high, ω+, frequency coupled phonon-plasmon modes (CPPMs) in the n-GaN layers. To describe the features of the CPPMs in the Raman spectra a self-consistent model that includes both the electro-optic and deformation-potential as well as charge-density fluctuation mechanisms as important processes for light scattering in n-GaN has been proposed. An agreement between the theoretical and experimental line shapes of the Raman spectra is obtained. From the best line-shape fitting of the CPPMs the depth profiles of the plasmon and phonon damping, plasmon frequency, free carrier concentrations, and electron mobility as well as the contributions of the electron-phonon interaction and charge density fluctuations to the Raman cross section in the GaN layers are determined. It is found that these depth profiles exhibit considerable nonuniformity and change at different laser pump-power excitations. Despite the high electron concentration in the n+-GaN layers, a strong peak of the unscreened A1(LO) phonon is also observed. A possible origin for the appearance of this mode is discussed.

  17. Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates

    Science.gov (United States)

    Yamada, Hisashi; Chonan, Hiroshi; Takahashi, Tokio; Shimizu, Mitsuaki

    2017-04-01

    The electrical properties of m-plane Ni/n-GaN Schottky diodes grown via metalorganic chemical vapor deposition were investigated. Under growth at 1,120 °C with a V/III ratio of 1,000 (growth rate of 100 nm/min), the residual Si, O, and C impurity concentrations in the m-plane GaN layer were below the secondary-ion mass spectroscopy detection limit. The surface of the Si-doped n-GaN epitaxial layer on the 5°-off m-plane GaN substrate consisted of steps and terraces. A linear correlation between the carrier concentration and the Si atomic concentration was clearly observed from 1 × 1017 to 5 × 1015 cm‑3. The reverse current–voltage curves were fitted using the thermionic field-emission model at the measured carrier concentration and qϕB. The leakage current of the diodes under a reverse bias was effectively suppressed at a low carrier concentration of 4.6 × 1015 cm‑3.

  18. Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Cimalla, V.; Ambacher, O. [Institute of Micro- and Nanotechnologies, Technische Universitaet Ilmenau, P.O. Box 100565, 98684 Ilmenau (Germany); Machleidt, T.; Franke, K.H. [Department of Computer Graphics Program, Technische Universitaet Ilmenau, P.O. Box 100565, 98684 Ilmenau (Germany); Ristic, J.; Grandal, J.; Sanchez-Garcia, M.A.; Calleja, E. [ISOM-Dept. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica, 28040 Madrid (Spain); Niebelschuetz, M.

    2008-07-01

    High quality InN and GaN nanocolumns of different length and diameter grown by molecular beam epitaxy (MBE) were electrically characterized directly and non-destructively by Atomic Force Microscopy (AFM) as a function of the column diameter. The 'exact' column diameter was determined from AFM images by Blind Tip Estimation (BTE) and subsequent image reconstruction in order to avoid artefacts due to the finite AFM tip radius. In GaN, the conductivity rises up to a 'critical' diameter due to a depletion region at the surface of the nanocolumns and remains constant above. In contrast, the electron accumulation at the surface causes decreasing conductivity in InN nanocolumns with increasing diameter. Thus, the nanocolumn surface acts as the preferential conduction path. These facts prove that there is electron accumulation in as-grown non-polar InN surfaces, according to calculations of the Fermi level pinning in InN. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. UMA/GAN network architecture analysis

    Science.gov (United States)

    Yang, Liang; Li, Wensheng; Deng, Chunjian; Lv, Yi

    2009-07-01

    This paper is to critically analyze the architecture of UMA which is one of Fix Mobile Convergence (FMC) solutions, and also included by the third generation partnership project(3GPP). In UMA/GAN network architecture, UMA Network Controller (UNC) is the key equipment which connects with cellular core network and mobile station (MS). UMA network could be easily integrated into the existing cellular networks without influencing mobile core network, and could provides high-quality mobile services with preferentially priced indoor voice and data usage. This helps to improve subscriber's experience. On the other hand, UMA/GAN architecture helps to integrate other radio technique into cellular network which includes WiFi, Bluetooth, and WiMax and so on. This offers the traditional mobile operators an opportunity to integrate WiMax technique into cellular network. In the end of this article, we also give an analysis of potential influence on the cellular core networks ,which is pulled by UMA network.

  20. Development of gallium nitride-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular beam epitaxy

    Science.gov (United States)

    Cabalu, Jasper Sicat

    Much of the work done on ultraviolet (UV) and visible III-Nitrides-based light emitting diodes (LEDs) involves growth by metal-organic chemical vapor deposition (MOCVD). In this dissertation, the growth, development, and fabrication of III-Nitrides-based UV and visible LEDs with very high photon conversion and extraction efficiencies using hydride vapor-phase epitaxy (HVPE) and radio frequency (rf) plasma-assisted molecular beam epitaxy (PAMBE) is presented. High-power electrically-pumped UV-LEDs based on GaN/AlGaN multiple quantum wells (MQWs) emitting at 340 nm and 350 nm have been fabricated in a flip-chip configuration and evaluated. Under pulsed operation, UV-LEDs emitting at 340 nm have output powers that saturate, due to device heating, at approximately 3 mW. Devices emitting at 350 nm show DC operation output powers as high as 4.5 mW under 200 mA drive current. These results were found to be equivalent with those of UV-LEDs produced by the MOCVD and HVPE methods. The concept of using textured MQWs on UV-LED structures was tested by optical pumping of GaN/AlGaN MQWs grown on textured GaN templates. Results show highly enhanced (>700 times) blue-shifted photoluminescence (PL) at 360 nm compared to similarly produced MQWs on smooth GaN templates whose PL emission is red-shifted. These results are attributed partly to enhancement in light extraction efficiency (LEE) and partly to enhancement in internal quantum efficiency (IQE). The origin of the increase in IQE is partly due to reduction of the quantum-confined Stark effect (QCSE) on QW-planes not perpendicular to the polarization direction and partly due to charge redistribution in the QWs caused by the polarization component parallel to the planes of the QWs. Similar studies have been done for visible LEDs using InGaN/GaN MQWs. Growth of LED structures on textured GaN templates employing textured MQW-active regions resulted in the production of dichromatic (430 nm and 530 nm) phosphorless white LEDs with

  1. Synthesis of Single Crystal GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Lining Fang

    2016-05-01

    Full Text Available The straight and curved gallium nitride (GaN nanowires were successfully synthesized by controlling the gallium/ nitrogen reactant ratio via a chemical vapour deposition method. The structure and morphology of nanowires were characterized by X-ray diffraction (XRD, transmission electronic microscopy (TEM, field emission scanning electron microscopy (FESEM, selected area electron diffraction (SAED and high resolution transmission electron microscopy (HRTEM. The straight and curved GaN nanowires are composed of wurtzite and a zinc blende structure, respectively. Photoluminescence (PL spectra of zinc blende GaN nanowires showed a strong UV emission band at 400 nm, indicating potential application in optoe‐ lectronic devices.

  2. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  3. Growth and characterization of group iiinitrides by migration-enhanced afterglow epitaxy

    Science.gov (United States)

    Gergova, Rositsa

    The work presented in this thesis investigates the growth and properties of group III- nitride semiconductors that were grown using the Migration Enhanced Afterglow Epitaxy (MEAglow) method. This work was to enhance the understanding of the MEAglow growth process towards the improvement of quality of the layers grown using this technique. The MEAglow technique applies the migration enhanced epitaxy method in a low pressure plasma-based CVD reactor, which has a potential of producing high quality epitaxial group III-nitride layers at relatively low growth temperatures on large deposition areas. The low temperature pulse growth in metal-rich regime, comprising the MME method was employed under growth pressures between 500 mTorr and 3000 mTorr. As the MME method up to this point has been used only for MBE systems, study of the impact of the growth pressure on the materials properties was necessary. In this work the pressure dependence was mapped to an existing surface phase diagram for MBE systems by calculating the number of nitrogen gas phase collisions and the metalorganic bombardment rate, for the specific to the prototype reactor parameters, to a first approximation. This was done in order to achieve an intermediate regime free of metal droplets for growth in metal-rich regime. High quality epitaxial InN layers were accomplished on extremely thin and smooth Ga2O3 buffer layers. These results indicate a potential for the application of Ga2O3 buffers in InN growth. The MEAglow InN layers were further optimized for growth on commercially available GaN buffer layers and excellent two-dimensional growth was achieved for layers grown under metal-rich conditions at 512 °C. Post-growth annealing studies were carried out for InN layers grown at temperatures below 400 °C to study the limiting processes of the removal of excess nitrogen, believed to be a dominant defect in InN films grown in plasma-based systems at very low temperatures. Variations in GaN stoichiometry

  4. Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance

    Science.gov (United States)

    Lu, Chun-Ti; Huang, Yu-Shiang; Liu, C. W.

    2016-06-01

    Al2O3/TiO2 stack layers deposited by the plasma-enhanced atomic layer deposition enhance photoluminescence intensity by reducing effective surface recombination velocities on both n-type and p-type monocrystalline Si. The field effect of negative oxide charges in the dielectrics is responsible for the low effective surface recombination velocity. The dependence of the effective surface recombination velocity on the photoluminescence intensity is investigated by the 2D numerical simulation. The bilayer stacks without texture also reduce the AM1.5-weighted front side reflectance to 11.8%. The field-effect passivation of Al2O3/TiO2 films is further improved by a forming gas annealing due to the additional increase of the negative oxide charge density.

  5. Nearly zero reflectance of nano-pyramids and dual-antireflection coating structure for monocrystalline silicon solar cells.

    Science.gov (United States)

    Chang, Hyo Sik; Jung, Hyun-Chul

    2011-04-01

    The effect of two-step surface treatment on monocrystalline silicon solar cells was investigated. We changed the nanostructure on pyramidal surfaces by wet nano-texturing so that less light is reflected. The two-step nano-texturing process reduces the average reflectance to about 4% in the 300-1100 nm wavelength region. The use of an antireflection coating resulted in an effective reflectance of 1%. We found that the reflectance obtained by wet nano-texturing was lower than that obtained by conventional alkaline texturing. Thus, we can expect a further increase in the efficiency of silicon solar cells with two-step nano-texturing by a wet chemical process.

  6. Atomistic simulations of the effect of embedded hydrogen and helium on the tensile properties of monocrystalline and nanocrystalline tungsten

    Science.gov (United States)

    Chen, Zhe; Kecskes, Laszlo J.; Zhu, Kaigui; Wei, Qiuming

    2016-12-01

    Uniaxial tensile properties of monocrystalline tungsten (MC-W) and nanocrystalline tungsten (NC-W) with embedded hydrogen and helium atoms have been investigated using molecular dynamics (MD) simulations in the context of radiation damage evolution. Different strain rates have been imposed to investigate the strain rate sensitivity (SRS) of the samples. Results show that the plastic deformation processes of MC-W and NC-W are dominated by different mechanisms, namely dislocation-based for MC-W and grain boundary-based activities for NC-W, respectively. For MC-W, the SRS increases and a transition appears in the deformation mechanism with increasing embedded atom concentration. However, no obvious embedded atom concentration dependence of the SRS has been observed for NC-W. Instead, in the latter case, the embedded atoms facilitate GB sliding and intergranular fracture. Additionally, a strong strain enhanced He cluster growth has been observed. The corresponding underlying mechanisms are discussed.

  7. Photoluminescence efficiency of BGaN epitaxial layers with high boron content

    Energy Technology Data Exchange (ETDEWEB)

    Jurkevičius, J.; Mickevičius, J., E-mail: juras.mickevicius@ff.vu.lt; Kadys, A.; Kolenda, M.; Tamulaitis, G.

    2016-07-01

    High-boron-content epitaxial layers of BGaN intended for lattice-matching with AlGaN in UV light emitters were grown on SiC substrate and GaN and AlN templates on sapphire. Photoluminescence (PL) of these layers was studied under quasi-steady-state conditions by varying temperature and excitation intensity. The PL spectra in the samples with different boron content and their dynamics evidence formation of boron-rich regions occupying a small fraction of the total layer volume and acting as the emission killers. The room-temperature PL efficiency of the BGaN epilayers was estimated and shown to drastically decrease at increasing boron content with no significant correlation with either the type of substrate/template or technological conditions of the layer deposition.

  8. Self-organized dots of GaN:Mn grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kuroda, S.; Marcet, S. [CEA-CNRS Group ' ' Nanophysique et Semiconducteurs' ' , Laboratoire de Spectrometrie Physique, Universite Joseph Fourier, Grenoble I and CEA/DRFMC/SP2M, 17 avenue des Martyrs, 38054 Grenoble, Cedex 9 (France); Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Halley, D.; Ferrand, D.; Mariette, H. [CEA-CNRS Group ' ' Nanophysique et Semiconducteurs' ' , Laboratoire de Spectrometrie Physique, Universite Joseph Fourier, Grenoble I and CEA/DRFMC/SP2M, 17 avenue des Martyrs, 38054 Grenoble, Cedex 9 (France); Cibert, J. [Laboratoire Louis Neel, CNRS, BP 166, 38042 Grenoble (France); Yamamoto, S.; Sakai, T.; Ohshima, T.; Itoh, H. [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gumma 370-1292 (Japan)

    2006-07-01

    Self-organized dots of Mn-doped GaN were grown on AlN by plasma-assisted molecular beam epitaxy. The growth was performed in the nitrogen-rich growth regime with the addition of small amount of Mn flux. The in-situ surface observation using reflection high energy electron diffraction (RHEED) and the ex-situ examination using atomic force microscope (AFM) revealed that the dot formation was observed only in the case where the amount of Mn flux was small. The estimate of Mn composition using particle induced X-ray emission (PIXE) experiment showed that the Mn composition in the dots layer was much higher than in thick (Ga,Mn)N layers grown with the same amount of Mn flux. The maximum Mn composition for the high-density dot formation was about x=0.01. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. The electronic structure of homogeneous ferromagnetic (Ga, Mn)N epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Piskorska-Hommel, E., E-mail: e.piskorska@int.pan.wroc.pl [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Institute W. Trzebiatowski, Wroclaw (Poland); Institute of Solid State Physics, University of Bremen, Bremen (Germany); Winiarski, M. J. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Institute W. Trzebiatowski, Wroclaw (Poland); Kunert, G.; Falta, J. [Institute of Solid State Physics, University of Bremen, Bremen (Germany); Demchenko, I. N. [Institute of Physic, Polish Academy of Sciences, Warsaw (Poland); Roshchupkina, O. D.; Grenzer, J. [Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Hommel, D. [Institute of Solid State Physics, University of Bremen, Bremen (Germany); Wrocław Research Center EIT+ Sp. z o.o., Wroclaw (Poland); Experimental Physics, University of Wroclaw, Wroclaw (Poland); Holý, V. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Praha (Czech Republic)

    2015-02-14

    X-ray Absorption Fine Structure (XAFS) techniques, namely, X-ray Near Edge Structure (XANES), Extended XAFS (EXAFS), and Anomalous X-ray Diffraction (AXRD) were used to investigate the local atomic and electronic structure of (Ga, Mn)N magnetic layers with Mn concentrations of up to 10% grown by Molecular Beam Epitaxy. The XANES and AXRD analysis prove the Mn incorporation on substitutional GaN lattice sites. EXAFS results indicate the good quality of the structure under examination, although 0.5 nitride atom vacancies were found. The Wien2k code was applied to interpret the XANES spectra quantitatively, i.e., to determine the electronic structure of the Mn atoms. It was shown that accounting for the core-hole effect is necessary to reconstruct effectively the XANES spectra. Conducted charge density analysis based on DFT calculations identified the valency of Mn atom to be of 2.4+.

  10. Epitaxy of Semiconductors Introduction to Physical Principles

    CERN Document Server

    Pohl, Udo W

    2013-01-01

    Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions t...

  11. Annealing of ion-implanted GaN

    CERN Document Server

    Burchard, A; Stötzler, A; Weissenborn, R; Deicher, M

    1999-01-01

    $^{111m}$Cd and $^{112}$Cd ions have been implanted into GaN. With photoluminescence spectroscopy and perturbed $\\gamma-\\gamma$-angular correlation spectroscopy (PAC) the reduction of implantation damage and the optical activation of the implants have been observed as a function of annealing temperature using different annealing methods. The use of N$_{2}$ or NH$_{3}$ atmosphere during annealing allows temperatures up to 1323k and 1373 K, respectively, but above 1200 K a strong loss of Cd from the GaN has been observed. Annealing GaN together with elementary Al forms a protective layer on the GaN surface allowing annealing temperatures up to 1570 K for 10 min. (11 refs).

  12. Application of Generative Adversarial Networks (GANs) to jet images

    CERN Document Server

    CERN. Geneva

    2017-01-01

    https://arxiv.org/abs/1701.05927 We provide a bridge between generative modeling in the Machine Learning community and simulated physical processes in High Energy Particle Physics by applying a novel Generative Adversarial Network (GAN) architecture to the production of jet images -- 2D representations of energy depositions from particles interacting with a calorimeter. We propose a simple architecture, the Location-Aware Generative Adversarial Network, that learns to produce realistic radiation patterns from simulated high energy particle collisions. The pixel intensities of GAN-generated images faithfully span over many orders of magnitude and exhibit the desired low-dimensional physical properties (i.e., jet mass, n-subjettiness, etc.). We shed light on limitations, and provide a novel empirical validation of image quality and validity of GAN-produced simulations of the natural world. This work provides a base for further explorations of GANs for use in faster simulation in High Energy Particle Physics.

  13. Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers

    Science.gov (United States)

    Novikov, S. V.; Staddon, C. R.; Martin, R. W.; Kent, A. J.; Foxon, C. T.

    2015-09-01

    Recent developments with group III nitrides present AlxGa1-xN based LEDs as realistic devices for new alternative deep ultra-violet light sources. Because there is a significant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. X-ray microanalysis measurements confirm that the AlN fraction is uniform across the wafer and mass spectroscopy measurements show that the composition is also uniform in depth. We have demonstrated that free-standing wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of AlN fractions. In order to develop a commercially viable process for the growth of wurtzite AlxGa1-xN substrates, we have used a novel Riber plasma source and have demonstrated growth rates of GaN up to 1.8 μm/h on 2-in. diameter GaAs and sapphire wafers.

  14. InGaN violet laser diodes grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Heffernan, J.; Kauer, M.; Hooper, S.E.; Bousquet, V.; Johnson, K. [Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB (United Kingdom)

    2004-09-01

    We report on the first InGaN quantum well laser diodes grown by molecular beam epitaxy (MBE). Devices were grown by gas-source MBE using ammonia as a source of nitrogen and elemental group III sources. The devices were grown on commercially available GaN template substrates. The lasers consist of a separate confinement heterostructure including an active region consisting of three In{sub 0.1}Ga{sub 0.9}N quantum wells with a nominal thickness of 2 nm. P-type doping of GaN and AlGaN cladding regions was obtained without the use of post-growth thermal annealing. The lasers were fabricated into a ridge-stripe geometry with ridge width of 5 {mu}m and length of 500-1500 {mu}m. Electron cyclotron resonance (ECR) dry-etching was used to fabricate the laser facets. Under pulsed current injection conditions, the lasers exhibit a room temperature threshold current density of 22 kA cm{sup -2} emitting at 400 nm. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Skierbiszewski, C.; Turski, H.; Muziol, G.; Siekacz, M.; Sawicka, M.; Cywiński, G.; Wasilewski, Z. R.; Porowski, S.

    2014-02-01

    The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN growth peculiarities, p-type doping efficiency, and the properties of InGaN quantum wells (QWs) grown by PAMBE. We demonstrate continuous wave (cw) LDs operating in the range from 410 to 482 nm. These LDs were grown on low dislocation (0 0 0 1) c-plane bulk GaN substrate, which allow one to fabricate cw LDs with a lifetime exceeding 2000 h. Also, the ultraviolet LDs at 388 nm grown on (2 0 -2 1) semipolar substrates are discussed. The use of high active nitrogen fluxes up to 2 µm/h during the InGaN growth was essential for pushing the lasing wavelengths of PAMBE LDs above 460 nm. Recent advancement of InGaN growth by PAMBE allows one to demonstrate high-quality quantum QWs and excellent morphology for thick layers. We discuss the influence of LDs design on their parameters such as lasing threshold current and laser beam quality.

  16. Polarity-controlled Growth of GaN by MOVPE and RF-MBE%用MOVPE和RF-MBE方法极性控制生长GaN

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    本文报道了用低压MOVPE和RF-分子束外延法在蓝宝石衬底上作极性控制的GaN生长.以"双~单层"模型讨论了用MOVPE和MBE法在蓝宝石衬底上生长GaN的极性选择的机理,并对AlN在极性转换过程中的作用给出了适当的解释.通过极性控制的生长,使MBE法生长的GaN的表面形貌和电学特性都得到了改善;并对LP-MOVPE生长开发出了一种"三步生长法",这样就可以用更多的外延方式在蓝宝石衬底上生长出高质量的GaN膜.%In the present work, the polarity-controlled growth of GaN on sapphire substrate by LP-MOVPE and RF-MBE is demonstrated. The mechanisms for polarity selection of GaN on sapphire substrate both in MOVPE and MBE growth are discussed based on the "two monolayers of Al" model, which also gives a reasonable explanation to the polarity reversion mechanism by AlN. Through the polarity-controlled growth, surface morphology and electrical property of GaN grown by RF-MBE is improved; a three-step growth method is developed for LP-MOVPE, so that high quality GaN films can be obtained in a more epitaxial way on sapphire substrate.

  17. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université de Montpellier, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean [CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, 06560 Valbonne (France); Bigenwald, Pierre [Institut Pascal, Campus des Cézeaux, 24 avenue des Landais, 63171 Aubière Cedex (France)

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  18. Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

    Institute of Scientific and Technical Information of China (English)

    冯淦; 朱建军; 沈晓明; 张宝顺; 赵德刚; 王玉田; 杨辉; 梁骏吾

    2003-01-01

    In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

  19. GaN nanorods coated with pure BN

    Science.gov (United States)

    Han, Wei-Qiang; Zettl, A.

    2002-12-01

    We report a method to efficiently synthesize gallium nitride (GaN) nanorods coated with insulating boron nitride (BN) layers. The GaN core is crystalline (with either a cubic zincblende or hexagonal wurtzite structure) and has diameters ranging from 10 to 85 nm and lengths up to 60 μm. The outer encapsulating BN shells with typical thicknesses less than 5 nm extend fully over, and adhere well to, the entire nanorod surface.

  20. Effect of photocatalytic oxidation technology on GaN CMP

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jie, E-mail: jie-wang11@mails.tsinghua.edu.cn; Wang, Tongqing, E-mail: wtq@mail.tsinghua.edu.cn; Pan, Guoshun, E-mail: pangs@mail.tsinghua.edu.cn; Lu, Xinchun, E-mail: xclu@mail.tsinghua.edu.cn

    2016-01-15

    Graphical abstract: - Highlights: • Photocatalytic oxidation technology was introduced to GaN CMP for the first time and proves to be more efficient than before. • XPS analysis reveals the planarization process by different N-type semiconductor particles. • Analyzing the effect of pH on photocatalytic oxidation in GaN CMP. • Proposing the photocatalytic oxidation model to reveal the removal mechanism. - Abstract: GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO{sub 2}, SnO{sub 2}, and Fe{sub 2}O{sub 3}) are used as catalysts and added to the H{sub 2}O{sub 2}–SiO{sub 2}-based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH{sup −} and H{sub 2}O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H{sub 2}O{sub 2}–SiO{sub 2}-based polishing system combined with catalysts are improved significantly, especially when using TiO{sub 2}, the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO{sub 2} is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.