Enamel resistance to demineralization following Er:YAG laser etching for bonding orthodontic brackets

Science.gov (United States)

Ahrari, Farzaneh; Poosti, Maryam; Motahari, Pourya

2012-01-01

Background: Several studies have shown that laser-etching of enamel for bonding orthodontic brackets could be an appropriate alternative for acid conditioning, since a potential advantage of laser could or might be caries prevention. This study compared enamel resistance to demineralization following etching with acid phosphoric or Er:YAG laser for bonding orthodontic brackets. Materials and Methods: Fifty sound human premolars were divided into two equal groups. In the first group, enamel was etched with 37% phosphoric acid for 15 seconds. In the second group, Er:YAG laser (wavelength, 2 940 nm; 300 mJ/pulse, 10 pulses per second, 10 seconds) was used for tooth conditioning. The teeth were subjected to 4-day PH-cycling process to induce caries-like lesions. The teeth were then sectioned and the surface area of the lesion was calculated in each microphotographs and expressed in pixel. The total surface of each specimen was 196 608 pixels. Results: Mean lesion areas were 7 171 and 7532 pixels for Laser-etched and Acid-etched groups, respectively. The two sample t-test showed that there was no significant difference in lesion area between the two groups (P = 0.914). Conclusion: Although Er:YAG laser seems promising for etching enamel before bonding orthodontic brackets, it does not reduce enamel demineralization when exposed to acid challenge. PMID:23162591

Study etching characteristics of a track detector CR-39 with ultraviolet laser irradiation

International Nuclear Information System (INIS)

Dwaikat, Nidal; Iida, Toshiyuki; Sato, Fuminobu; Kato, Yushi; Ishikawa, Ippei; Kada, Wataru; Kishi, Atsuya; Sakai, Makoto; Ihara, Yohei

2007-01-01

The effect of pulsed ultraviolet Indium-doped Yttrium Aluminum Garnet (UV-In:YAG) laser of λ=266 nm, pulse energy 42 mJ/pulse at repetition rate10 Hz on the etching characteristics of Japanese CR-39 was studied at various energy intensities. Fifteen detectors were divided into two sets, each of seven samples and one sample was kept as a reference.The first set (post-exposed) was first exposed to alpha radiation with close contact to 241 Am and then treated in air with laser in the energy intensity range from 40 to160 J/cm 2 , 20 J/cm 2 in step. The second set (pre-exposed) was irradiated in reverse process (laser+alpha) with the same sources as the first set and under the same condition. The laser energy intensities ranged between 20 and 140 J/cm 2 , 20 J/cm 2 in step. For post-exposed samples (alpha+laser) bulk etch rate decreases up to 60 J/cm 2 and increases thereafter, while for pre-exposed samples (laser+alpha) the bulk etch rate oscillates without showing any precise periodicity. The bulk etch rate for both sets was found to be the same at 60≤energy intensity≤80 J/cm 2 and this may indicate that the same structural changes have happened. The track etch rate was found to be equal to the bulk etch rate for both sets, so the sensitivity is constant. In both sets several changes on the detector surfaces: tracks of different sizes and shapes and high density within the laser spot were observed. Out of the laser spot, the tracks become larger and lower density, indicating cross-linking and scission have happened, simultaneously, on the same surface as a result of UV-laser irradiation

Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

International Nuclear Information System (INIS)

Castro, F L A; Carvalho, J G; Andrade, M F; Saad, J R C; Hebling, J; Lizarelli, R F Z

2014-01-01

This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm 2 ) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin. (paper)

Selective laser etching or ablation for fabrication of devices

KAUST Repository

Buttner, Ulrich

2017-01-12

Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can be used to fabricate a variety of features, including an electrode, an interconnect, a channel, a reservoir, a contact hole, a trench, a pad, or a combination thereof. A variety of devices fabricated according to the methods are also provided. In some aspects, capacitive humidity sensors are provided that can be fabricated according to the provided methods. The capacitive humidity sensors can be fabricated with intricate electrodes, e.g. having a fractal pattern such as a Peano curve, a Hilbert curve, a Moore curve, or a combination thereof.

Investigation of sidewall roughness of the microgrooves manufactured with laser-induced etching technique

International Nuclear Information System (INIS)

Oh, Kwang H.; Park, J.B.; Cho, S.I.; Im, H.D.; Jeong, S.H.

2009-01-01

A novel laser etching technique utilizing an optical fiber as the laser beam guide is introduced. Depending upon whether a pulsed or a continuous wave (CW) laser is employed as the irradiation source, it was found that the etch depth and surface morphology of the grooves varied significantly. It was then demonstrated that deep microgrooves with smooth sidewalls can be obtained using a hybrid pulse and CW scanning process. The results of laser heating and chemical analyses revealed that sidewall roughness of the microgroove is mainly attributed to surface melting.

Is laser conditioning a valid alternative to conventional etching for aesthetic brackets?

Science.gov (United States)

Sfondrini, M F; Calderoni, G; Vitale, M C; Gandini, P; Scribante, A

2018-03-01

ER:Yag lasers have been described as a more conservative alternative to conventional acid-etching enamel conditioning technique, when bonding conventional metallic orthodontic brackets. Since the use of aesthetic orthodontic brackets is constantly increasing, the purpose of the present report has been to test laser conditioning with different aesthetic brackets. Study Design: Five different aesthetic brackets (microfilled copolymer, glass fiber, sapphire, polyoxymethylene and sintered ceramic) were tested for shear bond strength and Adhesive Remnant Index scores using two different enamel conditioning techniques (acid etching and ER:Yag laser application). Two hundred bovine incisors were extracted, cleaned and embedded in resin. Specimens were then divided into 10 groups with random tables. Half of the specimens were conditioned with conventional orthophosphoric acid gel, the other half with ER:Yag laser. Different aesthetic brackets (microfilled copolymer, glass fiber, sapphire, polyoxymethylene and sintered ceramic) were then bonded to the teeth. Subsequently all groups were tested in shear mode with a Universal Testing Machine. Shear bond strength values and adhesive remnant index scores were recorded. Statistical analysis was performed. When considering conventional acid etching technique, sapphire, polyoxymethylene and sintered ceramic brackets exhibited the highest SBS values. Lowest values were reported for microfilled copolymer and glass fiber appliances. A significant decrease in SBS values after laser conditioning was reported for sapphire, polyoxymethylene and sintered ceramic brackets, whereas no significant difference was reported for microfilled copolymer and glass fiber brackets. Significant differences in ARI scores were also reported. Laser etching can significantly reduce bonding efficacy of sapphire, polyoxymethylene and sintered ceramic brackets.

Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography

International Nuclear Information System (INIS)

Li, Hao; Geng, Yongyou; Wu, Yiqun

2012-01-01

In the current work, the etching selectivity of the AgInSbTe phase-change film in laser thermal lithography is reported for the first time. Film phase change induced by laser irradiation and etching selectivity to crystalline and amorphous states in different etchants, including hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, sodium hydroxide, sodium sulfide, ammonium sulfide and ammonium hydroxide, are investigated. The results indicated that ammonium sulfide solvent (2.5 mol/L) had excellent etching selectivity to crystalline and amorphous states of the AgInSbTe film, and the etching characteristics were strongly influenced by the laser power density and laser irradiation time. The etching rate of the crystalline state of the AgInSbTe film was 40.4 nm/min, 20 times higher than that of the amorphous state under optimized irradiation conditions (power density: 6.63 mW/μm 2 and irradiation time: 330 ns), with ammonium sulfide solvent (2.5 mol/L) as etchant. The step profile produced in the selective etching was clear, and smooth surfaces remained both on the step-up and step-down with a roughness of less than 4 nm (10 x 10 μm). The excellent performance of the AgInSbTe phase-change film in selective etching is significant for fabrication of nanostructures with super-resolution in laser thermal lithography. (orig.)

Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

Science.gov (United States)

Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

2014-03-01

Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

A study on electric properties for pulse laser annealing of ITO film after wet etching

International Nuclear Information System (INIS)

Lee, C.J.; Lin, H.K.; Li, C.H.; Chen, L.X.; Lee, C.C.; Wu, C.W.; Huang, J.C.

2012-01-01

The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure. - Highlights: ► The laser annealing process induces microcracks in InSnO 2 thin films. ► The defects result in higher local etching rate during wet etching. ► These process defects originate from residual tension stress. ► Decreasing the thermal shock is suggested in order to reduce these process defects.

Study on morphology of high-aspect-ratio grooves fabricated by using femtosecond laser irradiation and wet etching

International Nuclear Information System (INIS)

Chen, Tao; Pan, An; Li, Cunxia; Si, Jinhai; Hou, Xun

2015-01-01

Highlights: • We studied morphologies of silicon grooves fabricated by laser irradiation and wet etching. • We found nano-ripple structures formed on the groove sidewall. • Formations of nano-ripples were due to the formation of standing wave and nanoplanes. • Remaining debris on the groove bottom was removed by KOH etching. - Abstract: Morphologies of high-aspect-ratio silicon grooves fabricated by using femtosecond laser irradiation and selective chemical etching of hydrofluoric acid (HF) were studied. Oxygen was deeply doped into silicon under femtosecond laser irradiation in air, and then the oxygen-doped regions were removed by HF etching to form high-aspect-ratio grooves. After HF etching, periodic nano-ripples which were induced in silicon by femtosecond laser were observed on the groove sidewalls. The ripple orientation was perpendicular or parallel to the laser propagation direction (z direction), which depended on the relative direction between the laser polarization direction and the scanning direction. The formation of nano-ripples with orientations perpendicular to z direction could be attributed to the standing wave generated by the interference of the incident light and the reflected light in z direction. The formation of nano-ripples with orientations parallel to z direction could be attributed to the formation of self-organized periodic nanoplanes (bulk nanogratings) induced by femtosecond laser inside silicon. Materials in the tail portion of laser-induced oxygen doping (LIOD) regions were difficult to be etched by HF solution due to low oxygen concentration. The specimen was etched further in KOH solution to remove remaining materials in LIOD regions and all-silicon grooves were fabricated

Etching of LiNbO/sub 3/ by laser-driven fusion of salts

International Nuclear Information System (INIS)

Ashby, C.I.H.; Brannon, P.J.

1987-01-01

Lithium niobate exhibits low reactivity with most chemical etchants. Consequently, etching a LiNbO/sub 3/ surface to produce optical structures such as ridge waveguides or grooves for fiber coupling normally requires relatively slow processes such as ion milling. The authors have developed a laser-driven chemical etching process for etching highly unreactive ionic solids based on the fusion of salts in the molten phase and show that the etch rate can be more than 100 times faster than ion milling rates. This process involves spatially localized melting of LiNbO/sub 3/ by high-power density laser pulses with photon energies in excess of the band gap of LiNbO/sub 3/. While molten, LiNbO/sub 3/ undergoes reaction with a surface coating of KF to form niobium oxyfluoride anions by fusion of the salts. The resulting solid is highly water soluble. The insolubility of LiNbO/sub 3/ permits subsequent removal of only the irradiated area by rinsing in water. Surface morphology is determined by laser power density. The process exhibits a wavelength dependence

Excimer laser beam profile recording based on electrochemical etched polycarbonate

International Nuclear Information System (INIS)

Parvin, P.; Jaleh, B.; Zangeneh, H.R.; Zamanipour, Z.; Davoud-Abadi, Gh.R.

2008-01-01

There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler

Excimer laser beam profile recording based on electrochemical etched polycarbonate

Energy Technology Data Exchange (ETDEWEB)

Parvin, P. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of)], E-mail: parvin@aut.ac.ir; Jaleh, B. [Physics Department, Bu-Ali Sina University, Postal Code 65174, Hamedan (Iran, Islamic Republic of); Zangeneh, H.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Zamanipour, Z. [Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of); Davoud-Abadi, Gh.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of)

2008-08-15

There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler.

Laser surface pretreatment of 100Cr6 bearing steel – Hardening effects and white etching zones

International Nuclear Information System (INIS)

Buling, Anna; Sändker, Hendrik; Stollenwerk, Jochen; Krupp, Ulrich; Hamann-Steinmeier, Angela

2016-01-01

Highlights: • Laser surface pretreatment of the bearing steel 100Cr6 is performed. • Microstructural changes of the surface are examined by light microscopy and SEM. • Topographical changes are observed using white light interferometry. • Micro-hardness testing show the existence of very hard white etching zones (WEZ). • WEZ are attributed to near-surface reaustenitization and rapid quenching. • Dark etching zones (DEZ) are found at the laser path edges after laser pretreatment. - Abstract: In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1–1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

Laser surface pretreatment of 100Cr6 bearing steel – Hardening effects and white etching zones

Energy Technology Data Exchange (ETDEWEB)

Buling, Anna, E-mail: a.buling@hs-osnabrueck.de [Faculty of Engineering and Computer Science, University of Applied Sciences, 49009 Osnabrück (Germany); Sändker, Hendrik; Stollenwerk, Jochen [Fraunhofer Institute for Laser Technology ILT, Steinbachstrasse 15, 52074 Aachen (Germany); Krupp, Ulrich; Hamann-Steinmeier, Angela [Faculty of Engineering and Computer Science, University of Applied Sciences, 49009 Osnabrück (Germany)

2016-08-15

Highlights: • Laser surface pretreatment of the bearing steel 100Cr6 is performed. • Microstructural changes of the surface are examined by light microscopy and SEM. • Topographical changes are observed using white light interferometry. • Micro-hardness testing show the existence of very hard white etching zones (WEZ). • WEZ are attributed to near-surface reaustenitization and rapid quenching. • Dark etching zones (DEZ) are found at the laser path edges after laser pretreatment. - Abstract: In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1–1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

Micromachining for Si etching using CW CO 2 laser

International Nuclear Information System (INIS)

Hawat, Sh.; Naddaf, M.; Al-Sadat, W.; Weiss, Sh.

2012-08-01

Many experiments were carried out to achieve etching for silicon samples located on glass substrate (Pyrex or Quartz) using Cw CO 2 laser under treating conditions which were in the case of linear scanning as: the power was 35-47 W, the number of round trips was 10-60 and the linear scanning speed was 17-75 mm/s, and in the case of fixed sample they were as: the power was 40 W and the exposure time was between 2-6 min. The obtained results were different depending on the form of etching and its quality, according to the applied treating conditions on the silicon samples, taking the treated silicon surface attached directly to the glass substrate surface or taking the opposite side of the silicon sample. The etching of the first type was easy to get, but the second one was more difficult to obtain, which requires very strong conditions. The best of these results were recorded using a quartz substrate under treating conditions: the laser power was 42.5 W, the number of round trips was 30, and the scanning speed was 75 mm/s, so the etching was limited to separate spots produced on the surface of the sample. In the all cases, the pictures of spots and lines formed on treated Si samples were taken using scanning electron microscope (SEM) for both sides of the studied samples. (authors)

Micromachining for Si etching using CW CO_2 laser

International Nuclear Information System (INIS)

Al-Hawat, Sh.; Naddaf, M.; Al-Sadat, W.; Wiess, Sh.

2015-01-01

Many experiments were carried out to achieve etching for silicon samples located on glass substrate (Pyrex or Quartz) using CW CO_2 laser under treating conditions which were in the case of linear scanning as: the power was 35-47 W, the number of round trips was 10-60 and the linear scanning speed was 17-75 mm/s, and in the case of fixed sample they were as: the power was 40 W and the exposure time was between 2-6 min. The obtained results were different depending on the form of etching and its quality, according to the applied treating conditions on the silicon samples, taking the treated silicon surface attached directly to the glass substrate surface or taking the opposite side of the silicon sample. The etching of the first type was easy to get, but the second one was more difficult to obtain, which requires very strong conditions. The best of these results were recorded using a quartz substrate under treating conditions: the laser power was 42.5 W, the number of round trips was 30, and the scanning speed was 75 mm/s, so the etching was limited to separate spots produced on the surface of the sample. In the all cases, the pictures of spots and lines formed on treated Si samples were taken using scanning electron microscope (SEM) for both sides of the studied samples.(author)

Fibre Laser Cutting and Chemical Etching of AZ31 for Manufacturing Biodegradable Stents

Directory of Open Access Journals (Sweden)

Ali Gökhan Demir

2013-01-01

Full Text Available The use of magnesium-alloy stents shows promise as a less intrusive solution for the treatment of cardiovascular pathologies as a result of the high biocompatibility of the material and its intrinsic dissolution in body fluids. However, in addition to requiring innovative solutions in material choice and design, these stents also require a greater understanding of the manufacturing process to achieve the desired quality with improved productivity. The present study demonstrates the manufacturing steps for the realisation of biodegradable stents in AZ31 magnesium alloy. These steps include laser microcutting with a Q-switched fibre laser for the generation of the stent mesh and subsequent chemical etching for the cleaning of kerf and surface finish. Specifically, for the laser microcutting step, inert and reactive gas cutting conditions were compared. The effect of chemical etching on the reduction in material thickness, as well as on spatter removal, was also evaluated. Prototype stents were produced, and the material composition and surface quality were characterised. The potentialities of combining nanosecond laser microcutting and chemical etching are shown and discussed.

Effect of Surface Treatment on Enamel Cracks After Orthodontic Bracket Debonding: Er,Cr:YSGG Laser-Etching Versus Acid-Etching

Science.gov (United States)

Ghaffari, Hassanali; Mirhashemi, Amirhossein; Baherimoghadam, Tahereh; Azmi, Amir

2017-01-01

Objectives: This study sought to compare enamel cracks after orthodontic bracket debonding in the surfaces prepared with erbium, chromium: yttrium-scandium-galliumgarnet (Er,Cr:YSGG) laser and the conventional acid-etching technique. Materials and Methods: This in-vitro experimental study was conducted on 60 sound human premolars extracted for orthodontic purposes. The teeth were randomly divided into two groups (n=30). The teeth in group A were etched with 37% phosphoric acid gel, while the teeth in group B were subjected to Er,Cr:YSGG laser irradiation (gold handpiece, MZ8 tip, 50Hz, 4.5W, 60μs, 80% water and 60% air). Orthodontic brackets were bonded to the enamel surfaces and were then debonded in both groups. The samples were inspected under a stereomicroscope at ×38 magnification to assess the number and length of enamel cracks before bonding and after debonding. Independent-samples t-test was used to compare the frequency of enamel cracks in the two groups. Levene’s test was applied to assess the equality of variances. Results: No significant difference was noted in the frequency or length of enamel cracks between the two groups after debonding (P>0.05). Conclusions: Despite the same results of the frequency and length of enamel cracks in the two groups and by considering the side effects of acid-etching (demineralization and formation of white spot lesions), Er,Cr:YSGG laser may be used as an alternative to acid-etching for enamel surface preparation prior to bracket bonding. PMID:29296111

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Marginal microleakage in vitro study of occlusal fissures sealing prepared and etched or not with Er: YAG laser

International Nuclear Information System (INIS)

Youssef, Fernanda de Almeida

2004-01-01

The aim of this in vitro study was to evaluate the degree of marginal microleakage in occlusal sealing by invasive techniques, after preparation with Er:YAG laser followed or not by Er:YAG laser etching and compared to the conventional technique. Thirty human premolars were divided into three groups: A (control group) - cavities were prepared with high speed and etched with 37% orthophosphoric acid; group B - cavities were prepared with Er:YAG (350 mJ, 4 Hz and 112 J /cm 2 ) and etched with 37% orthophosphoric acid; group C - cavities were prepared with Er:YAG laser (350 mJ, 4 Hz and 112 J/cm 2 ), and etched with Er:YAG laser (80 mJ, 4 Hz and 25 m/cm 2 ). All cavities were treated with the same adhesive system and restored with flow composite according to manufacturer instructions. Teeth were submitted to thermal cycling procedures and immersed in 50% Silver Nitrate Solutions for 8 hours in total darkness. Teeth were sectioned longitudinally in the bucco-lingual direction, in slices of 1 mm thick. Each slice was immersed into photo developing solution under 16 hours of fluorescent light. Slices were photographed and microleakage was scored from 0 to 7 J by three standard examiners. Results showed statistically significant differences for group C (Er:YAG laser preparation and etching). We concluded that Er:YAG laser can be used for cavity preparation of occlusal sealing, like the conventional high speed method. However, this laser, used as enamel etching agent, could not promote an adequate surface for adhesive procedures. (author)

Evaluation of the bond strength of resin cements used to lute ceramics on laser-etched dentin.

Science.gov (United States)

Giray, Figen Eren; Duzdar, Lale; Oksuz, Mustafa; Tanboga, Ilknur

2014-07-01

The purpose of this study was to investigate the shear bond strength (SBS) of two different adhesive resin cements used to lute ceramics on laser-etched dentin. Erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) laser irradiation has been claimed to improve the adhesive properties of dentin, but results to date have been controversial, and its compatibility with existing adhesive resin cements has not been conclusively determined. Two adhesive cements, one "etch-and-rinse" [Variolink II (V)] and one "self-etch" [Clearfil Esthetic Cement (C)] luting cement, were used to lute ceramic blocks (Vita Celay Blanks, Vita) onto dentin surfaces. In total, 80 dentin specimens were distributed randomly into eight experimental groups according to the dentin surface-etching technique used Er,Cr:YSGG laser and Er:YAG laser: (1) 37% orthophosphoric acid+V (control group), (2) Er,Cr:YSGG laser+V, (3) Er,Cr:YSGG laser+acid+V, (4) Er:YAG laser+V, (5) Er:YAG laser+acid+V, (6) C, (7) Er,Cr:YSGG laser+C, and (8) Er:YAG laser+C. Following these applications, the ceramic discs were bonded to prepared surfaces and were shear loaded in a universal testing machine until fracture. SBS was recorded for each group in MPa. Shear test values were evaluated statistically using the Mann-Whitney U test. No statistically significant differences were evident between the control group and the other groups (p>0.05). The Er,Cr:YSGG laser+A+V group demonstrated significantly higher SBS than did the Er,Cr:YSGG laser+V group (p=0.034). The Er,Cr:YSGG laser+C and Er:YAG laser+C groups demonstrated significantly lower SBS than did the C group (pceramic bond strengths, depending upon the adhesive cement used.

Modeling the Losses of Dissolved CO(2) from Laser-Etched Champagne Glasses.

Science.gov (United States)

Liger-Belair, Gérard

2016-04-21

Under standard champagne tasting conditions, the complex interplay between the level of dissolved CO2 found in champagne, its temperature, the glass shape, and the bubbling rate definitely impacts champagne tasting by modifying the neuro-physicochemical mechanisms responsible for aroma release and flavor perception. On the basis of theoretical principles combining heterogeneous bubble nucleation, ascending bubble dynamics, and mass transfer equations, a global model is proposed, depending on various parameters of both the wine and the glass itself, which quantitatively provides the progressive losses of dissolved CO2 from laser-etched champagne glasses. The question of champagne temperature was closely examined, and its role on the modeled losses of dissolved CO2 was corroborated by a set of experimental data.

The effect of ArF laser irradiation (193 nm) on the photodegradation and etching properties of alpha-irradiated CR-39 detectors

Energy Technology Data Exchange (ETDEWEB)

Shakeri Jooybari, B. [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Ghergherehchi, M. [College of Information and Technology/ school of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Afarideh, H., E-mail: hafarideh@aut.ac.ir [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Lamehi-Rachti, M. [Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of)

2015-01-01

The effects of ArF laser irradiation (λ=193nm) at various fluences (energy dose or energy density) on the etching properties of pre-exposed (laser + alpha) CR-39 detectors were studied. First, UV–Vis and Fourier transform infrared (FTIR) spectra were acquired for non-laser-irradiated and laser-irradiated samples to detect the influence of the ArF laser on the chemical modification of the CR-39. Changes observed in the spectra indicated that the predominant process that occurred upon ArF laser irradiation was a bond-scission process. Thereafter, the mean track and bulk etching parameters were experimentally measured in ArF-laser-irradiated CR-39 detectors exposed to an alpha source ({sup 241}Am, E = 5.49 MeV). Inhomogeneous regions in the laser-irradiated side of the CR-39 demonstrated a variable etching rate on only the front side of the CR-39 detector. New equations are also presented for the average bulk etching rate for these inhomogeneous regions (front side). The mean bulk and track etching rates and the mean track dimensions increased in a fluence range of 0–37.03 mJ/cm{sup 2} because of photodegradation and the scission of chemical bonds, which are the predominant processes in this range. When the fluence was increased from 37.03 to 123.45 mJ/cm{sup 2}, the bulk and track etching rates and the track dimensions slowly decreased because of the formation of cross-linked structures on the CR-39 surface. The behavior of the bulk and track etching rates and the track dimensions appears to be proportional to the dose absorbed on the detector surface. It was observed that as the etching time was increased, the bulk and track etching rates and the track dimensions of the laser-irradiated samples decreased because of the shallow penetration depth of the 193 nm laser and the reduction in the oxygen penetration depth.

Electrolytic etching of fine stainless-steel pipes patterned by laser-scan lithography

Science.gov (United States)

Takahashi, Hiroshi; Sagara, Tomoya; Horiuchi, Toshiyuki

2017-07-01

Recently, it is required to develop a method for fabricating cylindrical micro-components in the field of measurement and medical engineering. Here, electrolytic etching of fine stainless-steel pipes patterned by laser-scan lithography was researched. The pipe diameter was 100 μm. At first, a pipe coated with 3-7 μm thick positive resist (tok, PMER P LA-900) was exposed to a violet laser beam with a wavelength of 408 nm (Neoark,TC20-4030-45). The laser beam was reshaped in a circle by placing a pinhole, and irradiated on the pipe by reducing the size in 1/20 using a reduction projection optics. Linearly arrayed 22 slit patterns with a width of 25 μm and a length of 175 μm were delineated in every 90-degree circumferential direction. That is, 88 slits in total were delineated at an exposure speed of 110 μm/s. In the axial direction, patterns were delineated at intervals of 90 μm. Following the pattern delineation, the pipe masked by the resist patterns was electrolytically etched. The pipe was used as an anode and an aluminum cylinder was set as a cathode around the pipe. As the electrolyte, aqueous solution of NaCl and NH4Cl was used. After etching the pipe, the resist was removed by ultrasonic cleaning in acetone. Although feasibility for fabricating multi-slit pipes was demonstrated, sizes of the etched slits were enlarged being caused by the undercut, and the shapes were partially deformed, and all the pipes were snapped at the chuck side.

Continuous wave ultraviolet radiation induced frustration of etching in lithium niobate single crystals

Energy Technology Data Exchange (ETDEWEB)

Mailis, S.; Riziotis, C.; Smith, P.G.R.; Scott, J.G.; Eason, R.W

2003-02-15

Illumination of the -z face of congruent lithium niobate single crystals with continuous wave (c.w.) ultraviolet (UV) laser radiation modifies the response of the surface to subsequent acid etching. A frequency doubled Ar{sup +} laser ({lambda}=244 nm) was used to illuminate the -z crystal face making it resistive to HF etching and thus transforming the illuminated tracks into ridge structures. This process enables the fabrication of relief patterns in a photolithographic manner. Spatially resolved Raman spectroscopy indicates preservation of the good crystal quality after irradiation.

Evaluation of surface topography of zirconia ceramic after Er:YAG laser etching.

Science.gov (United States)

Turp, Volkan; Akgungor, Gokhan; Sen, Deniz; Tuncelli, Betul

2014-10-01

The aim of this study is to evaluate the effect of Erbium: yttrium-aluminum-garnet (Er:YAG) laser with different pulse lengths on the surface roughness of zirconia ceramic and airborne particle abrasion. Er:YAG laser treatment is expected to be an alternative surface treatment method for zirconia ceramics; however, the parameters and success of the application are not clear. One hundred and forty zirconia discs (diameter, 10 mm; thickness, 1.2 mm) were prepared by a computer-aided design and computer-aided manufacturing (CAD/CAM) system according to the manufacturer's instructions. Specimens were divided into 14 groups (n=10). One group was left as polished control, one group was air-particle abraded with Al2O3 particles. For the laser treatment groups, laser irradiation was applied at three different pulse energy levels (100, 200, and 300 mJ) and for each energy level at four different pulse lengths; 50, 100, 300, and 600 μs. Surface roughness was evaluated with an optical profilometer and specimens were evaluated with scanning electron microscopy (SEM). Data was analyzed with one way ANOVA and Tukey multiple comparison tests (α=0.05). For the 100 and 200 mJ laser etching groups, 50 and 100 μs laser duration resulted in significantly higher surface roughness compared with air-particle abrasion (p0.05). For the 300 mJ laser etching groups; there was no statistically significant difference among the Ra values of 50 μs, 100 μs, 300 μs, 600 μs, and air-particle abrasion groups (p>0.05). In order to increase surface roughness and promote better bonding to resin luting agents, Er:YAG laser etching may be an alternative to air-particle abrasion for zirconia ceramics. However, high levels of pulse energy and longer pulse length may have an adverse effect on micromechanical locking properties, because of a decrease in surface roughness.

Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid; Estudo in vitro da microinfiltracao marginal em cavidades classe V preparadas com laser de Er:YAG e condicionadas com acido ou com laser de Er:YAG e acido

Energy Technology Data Exchange (ETDEWEB)

Tavares, Henrique Dutra Simoes

2001-07-01

Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid; Estudo in vitro da microinfiltracao marginal em cavidades classe V preparadas com laser de Er:YAG e condicionadas com acido ou com laser de Er:YAG e acido

Energy Technology Data Exchange (ETDEWEB)

Tavares, Henrique Dutra Simoes

2001-07-01

Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0

Marginal microleakage of resin-modified glass-ionomer and composite resin restorations: Effect of using etch-and-rinse and self-etch adhesives

Directory of Open Access Journals (Sweden)

Maryam Khoroushi

2012-01-01

Full Text Available Objectives: Previous studies have shown that dental adhesives increase the bond strength of resin-modified glass-ionomer (RMGI restorative materials to dentin. This in vitro study has evaluated the effect of etch-and-rinse and self-etch bonding systems v/s cavity conditioner, and in comparison to similar composite resin restorations on maintaining the marginal sealing of RMGI restorations. Materials and Methods: 98 rectangular cavities (2.5×3×1.5 mm were prepared on buccal and palatal aspects of 49 human maxillary premolars, randomly divided into 7 groups (N=14. The cavities in groups 1, 2 and 3 were restored using a composite resin (APX. The cavities in groups 4, 5, 6 and 7 were restored using a resin-modified glass-ionomer (Fuji II LC. Before restoring, adhesive systems (Optibond FL = OFL, three-step etch-and-rinse; One Step Plus = OSP, two-step etch-and-rinse; Clearfil Protect Bond = CPB, two-step self-etch were used as bonding agents in groups 1-6 as follow: OFL in groups 1 and 4, OSP in groups 2 and 5, and CPB in groups 3 and 6, respectively. The specimens in group 7 were restored with GC cavity conditioner and Fuji II LC. All the specimens were thermo-cycled for 1000 cycles. Microleakage scores were determined using dye penetration method. Statistical analyzes were carried out with Kruskal-Wallis and Mann-Whitney U tests (α=0.05. Results: There were significant differences in microleakage scores at both enamel and dentinal margins between the study groups (P<0.05. The lowest microleakage scores at enamel and dentin margins of RMGI restorations were observed in group 6. Conclusion: Use of two-step self-etch adhesive, prior to restoring cervical cavities with RMGIC, seems to be more efficacious than the conventional cavity conditioner in decreasing marginal microleakage.

Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

Science.gov (United States)

Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

2015-02-25

In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

Masking considerations in chemically assisted ion beam etching of GaAs/AlGaAs laser structures

International Nuclear Information System (INIS)

Behfar-Rad, A.; Wong, S.S.; Davis, R.J.; Wolf, E.D.; Cornell Univ., Ithaca, NY

1989-01-01

The use of photoresist, Cr, and SiO 2 as etch masks for GaAs/AlGaAs structures in chemically assisted ion beam etching is reported. The optimized etch with a photoresist mask results in a high degree of anisotropy and smooth sidewalls. However, the etched surface contains undesirable features. The etch with a Cr mask is also highly anisotropic, and the etched surface is free of features. The drawback with Cr masks is that the sidewalls are rough. Vertical and smooth sidewalls as well as a featureless surface are obtained with a SiO 2 mask. The SiO 2 mask has been employed to etch the facets of monolithic GaAs/AlGaAs-based laser structures

Nanowall formation by maskless wet-etching on a femtosecond laser irradiated silicon surface

Science.gov (United States)

Lee, Siwoo; Jo, Kukhyun; Keum, Hee-sung; Chae, Sangmin; Kim, Yonghyeon; Choi, Jiyeon; Lee, Hyun Hwi; Kim, Hyo Jung

2018-04-01

We found that micro-cells surrounded by nanowalls can be formed by a maskless wet-etching process on Si (100) surfaces possessing Laser Induced Periodic Surface Structure (LIPSS) by femtosecond laser irradiation. The LIPSS process could produce periodic one-dimensional micron scale ripples on a Si surface, which could be developed into micro-cells by a subsequent etching process. The solution etching conditions strongly affected both the micro-cell and nanowall shapes such as the height and the thickness of nanowalls. The tetramethylammonium hydroxide solution created thin nanowalls and the resulting micro-cells with a well-flattened bottom while the KOH solution formed thick walls and incomplete micro-cells. The bottoms of micro-cells surrounded by the nanowalls were considerably flat with a 3.10 nm surface roughness. A pentacene layer was deposited on the micro-cells of a Si surface to evaluate the film properties by grazing incidence wide angle x-ray scattering measurements. The pentacene film on the micro-cell Si surface showed a strong film phase, which was comparable to the film phase grown on the atomically flat Si surface.

3D electrostatic actuator fabricated by non-ablative femtosecond laser exposure and chemical etching

Directory of Open Access Journals (Sweden)

Yang Tao

2015-01-01

Full Text Available We demonstrate the novel design of an electrostatic micro-actuator based on monolithic three-dimensional (3D shapes fabricated by non-ablative femtosecond laser exposure combined with chemical etching. Further, we present a single-scan stacking approach exploited in the fabrication of the 3D actuator to create crack-free, highcontrast, high fidelity and integrated micro-structures. Influential parameters: energy per pulse, polarization, scanning spacing and stacking directionwere systematically studied to predict and control the etching rate of 3D planes.Finally, we report the characterization of the actuator and its potential application in optomechanics to show a complete scenario of femtosecond laser machined integrated 3D micro-systems incorporating multiple functionalities.

Comparative Evaluation of Shear Bond Strength of Orthodontic Brackets using Laser Etching and Two Conventional Etching Techniques: An in vitro Study

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Shilpa Chawla Jamenis

2011-01-01

Conclusion : These results indicate that the shear bond strength of all the three groups was clinically acceptable with no significant difference between them but more adhesive was left on enamel treated with acid and laser as compared to self-etch primer treated enamel.

Large scale, highly dense nanoholes on metal surfaces by underwater laser assisted hydrogen etching near nanocrystalline boundary

Energy Technology Data Exchange (ETDEWEB)

Lin Dong; Zhang, Martin Yi; Ye Chang; Liu Zhikun; Liu, C. Richard [School of Industrial Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 (United States); Cheng, Gary J., E-mail: gjcheng@purdue.edu [School of Industrial Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 (United States)

2012-03-01

A new method to generate large scale and highly dense nanoholes is presented in this paper. By the pulsed laser irradiation under water, the hydrogen etching is introduced to form high density nanoholes on the surfaces of AISI 4140 steel and Ti. In order to achieve higher nanohole density, laser shock peening (LSP) followed by recrystallization is used for grain refinement. It is found that the nanohole density does not increase until recrystallization of the substructures after laser shock peening. The mechanism of nanohole generation is studied in detail. This method can be also applied to generate nanoholes on other materials with hydrogen etching effect.

Large scale, highly dense nanoholes on metal surfaces by underwater laser assisted hydrogen etching near nanocrystalline boundary

International Nuclear Information System (INIS)

Lin Dong; Zhang, Martin Yi; Ye Chang; Liu Zhikun; Liu, C. Richard; Cheng, Gary J.

2012-01-01

A new method to generate large scale and highly dense nanoholes is presented in this paper. By the pulsed laser irradiation under water, the hydrogen etching is introduced to form high density nanoholes on the surfaces of AISI 4140 steel and Ti. In order to achieve higher nanohole density, laser shock peening (LSP) followed by recrystallization is used for grain refinement. It is found that the nanohole density does not increase until recrystallization of the substructures after laser shock peening. The mechanism of nanohole generation is studied in detail. This method can be also applied to generate nanoholes on other materials with hydrogen etching effect.

Photonic jet μ-etching: from static to dynamic process

Science.gov (United States)

Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

2017-05-01

Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

International Nuclear Information System (INIS)

Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

1993-01-01

Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

Chemical Etching, AFM, Laser Damage Threshold, and Nonlinear Optical Studies of Potential Nonlinear Optical Crystal: Bis (L-Glutamine Potassium Nitrate

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Redrothu Hanumantharao

2013-01-01

Full Text Available A novel semiorganic nonlinear optical crystal bis (L-glutamine potassium nitrate (BGPN grown by slow evaporation technique at ambient temperature. The grown crystal surface has been analyzed by chemical etching and atomic force microscopy (AFM studies. Amplitude parameters like area roughness, roughness average, valley height, valley depth, peak height, and peak valley height were measured successfully from AFM studies. Etching studies were carried out by various solvents like water, methanol and ethanol. The etching study indicates the occurrence of different types of etch pit patterns like striations and steplike pattern. The laser damage threshold energy has been measured by irradiating laser beam using a Q-switched Nd: YAG laser (1064 nm. Second harmonic generation (SHG studies have been performed by famous Kurtz powder technique with reference to standard potassium dihydrogen phosphate single crystals (KDP. It is found from this technique that SHG efficiency of BGPN is in comparison to that of standard KDP crystals.

Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conventional Acid-Etching

Science.gov (United States)

Hosseini, M.H.; Namvar, F.; Chalipa, J.; Saber, K.; Chiniforush, N.; Sarmadi, S.; Mirhashemi, A.H.

2012-01-01

Introduction: The purpose of this study was to compare shear bond strength (SBS) of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching. Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI) scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types. Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively. Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning. PMID:22924098

Does ErbiumiYttrium-Aluminum-Garnet Laser to Enamel improve the Performance of Etch-and-rinse and Universal Adhesives?

Science.gov (United States)

De Jesus Tavarez, Rudys R; Rodrigues, Lorrany Lc; Diniz, Ana C; Lage, Lucas M; Torres, Carlos Rg; Bandeca, Matheus C; Firoozmand, Leily M

2018-03-01

This study aims to evaluate the effect of erbium: Yttrium-aluminum-garnet (Er:YAG) laser irradiation on the enamel microshear bond strength (μSBS), followed by the utilization of etch-and-rinse and universal adhesive systems. A total of 32 molars were sectioned in the mesiodistal direction producing 64 samples that were randomized into two groups (n = 32): single bond 2 (SB2) (etch-and-rinse system; 3M), SB universal (SBU) (universal etching system; The SB2 and SBU groups were then divided into two subgroups (n = 16): (i) enamel was irradiated with an Er:YAG laser (λ = 2.94 μm, 60 mJ, 10 Hz), and (ii) enamel served as a control. The samples were restored with TPH3 (Dentsply), stored in artificial saliva for 24 hours, and subjected to a micro-shear test. Kruskal-Wallis (p enamel interface. The previous irradiation of enamel with Er:YAG laser does not interfere with the performance of simplified two-step etch-and-rinse and universal adhesive systems. The increasing use of Er:YAG laser is important to evaluate the influence of this irradiation on the adhesion of restorative materials. Thus, to obtain the longevity of the restorative procedures, it is necessary to know the result of the association of the present adhesive systems to the irradiated substrate.

Optically transparent glass micro-actuator fabricated by femtosecond laser exposure and chemical etching

NARCIS (Netherlands)

Lenssen, B.L.K.; Bellouard, Y.

2012-01-01

Femtosecond laser manufacturing combined with chemical etching has recently emerged as a flexible platform for fabricating three-dimensional devices and integrated optical elements in glass substrates. Here, we demonstrate an optically transparent micro-actuator fabricated out of a single piece of

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

Energy Technology Data Exchange (ETDEWEB)

Jaleh, B. [Physics Department, Bu- Alisina University, Hamadan (Iran, Islamic Republic of); Parvin, P. [Physics Department, Amirkabir University, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of) and Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of) ]. E-mail: parvin@aut.ac.ir; Katoozi, M. [National Radiation Protection Department, AEOI, Tehran (Iran, Islamic Republic of); Zamani, Z. [Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of); Zare, A. [Laser Research Center, Atomic Energy Organization of Iran, AEOI, Tehran (Iran, Islamic Republic of)

2005-11-15

The ArF or KrF excimer laser exposure on the polycarbonate (PC) with corresponding doses higher than {phi}{sub th}5.2J/cm{sup 2}, at 32mJ/cm{sup 2} fluence per pulse and 5Hz pulse repetition rate (PRR), induces regular defects leading to self assembled defect structure following electrochemical etching (ECE). We have observed the conical-like structure for {phi}>{phi}{sub th}, whereas the polymer experiences hardening effect due to crosslinking when {phi}<{phi}{sub th}. Subsequently, conical-like, structure turns into track-like pits developing under ECE multiple treeing. Self assembled defect structure may be seen by naked eye as white spots, despite SEM illustrates a type of periodic pit formation-morphology. The exact explanation of the effect is not well understood yet. It looks like alpha tracks in the polymer surface, however the PC pieces were simply treated by excimer lasers at high doses, and they have not been exposed to the nuclear particles afterwards. We could not observe those effects at 308nm (XeCl laser) or longer wavelengths at 351nm (XeF laser) where UV photoablation does not occur. It indicates that UV ablation establishes surface degradation at shorter wavelengths, leading to laser micro etching. The mean track (defect) density is about one order of magnitude greater than the normal alpha tracks. Increasing UV doses, polymer undergoes a plateau, corresponding to etched defect saturation on PC.

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

International Nuclear Information System (INIS)

Jaleh, B.; Parvin, P.; Katoozi, M.; Zamani, Z.; Zare, A.

2005-01-01

The ArF or KrF excimer laser exposure on the polycarbonate (PC) with corresponding doses higher than φ th 5.2J/cm 2 , at 32mJ/cm 2 fluence per pulse and 5Hz pulse repetition rate (PRR), induces regular defects leading to self assembled defect structure following electrochemical etching (ECE). We have observed the conical-like structure for φ>φ th , whereas the polymer experiences hardening effect due to crosslinking when φ th . Subsequently, conical-like, structure turns into track-like pits developing under ECE multiple treeing. Self assembled defect structure may be seen by naked eye as white spots, despite SEM illustrates a type of periodic pit formation-morphology. The exact explanation of the effect is not well understood yet. It looks like alpha tracks in the polymer surface, however the PC pieces were simply treated by excimer lasers at high doses, and they have not been exposed to the nuclear particles afterwards. We could not observe those effects at 308nm (XeCl laser) or longer wavelengths at 351nm (XeF laser) where UV photoablation does not occur. It indicates that UV ablation establishes surface degradation at shorter wavelengths, leading to laser micro etching. The mean track (defect) density is about one order of magnitude greater than the normal alpha tracks. Increasing UV doses, polymer undergoes a plateau, corresponding to etched defect saturation on PC

Fabrication of 3D solenoid microcoils in silica glass by femtosecond laser wet etch and microsolidics

Science.gov (United States)

Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Du, Guangqing; Hou, Xun

2015-02-01

This paper reports a flexible fabrication method for 3D solenoid microcoils in silica glass. The method consists of femtosecond laser wet etching (FLWE) and microsolidics process. The 3D microchannel with high aspect ratio is fabricated by an improved FLWE method. In the microsolidics process, an alloy was chosen as the conductive metal. The microwires are achieved by injecting liquid alloy into the microchannel, and allowing the alloy to cool and solidify. The alloy microwires with high melting point can overcome the limitation of working temperature and improve the electrical property. The geometry, the height and diameter of microcoils were flexibly fabricated by the pre-designed laser writing path, the laser power and etching time. The 3D microcoils can provide uniform magnetic field and be widely integrated in many magnetic microsystems.

Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conven-tional Acid-Etching

Directory of Open Access Journals (Sweden)

M.H. Hosseini

2012-01-01

Full Text Available Introduction: The purpose of this study was to compare shear bond strength (SBS of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching.Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types.Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively.Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning.

Comparative study of etched enamel and dentin for the adhesion of composite resins with the Er:YAG 2,94 μm laser and CO2 9,6 μm laser: morphological (SEM) and tensile bond strength analysis

International Nuclear Information System (INIS)

Marraccini, Tarso Mugnai

2002-01-01

The aim of this study was to evaluate and compare the tensile bond strength of a composite resin adhered to the enamel and dentin which have received superficial irradiation with an Er:YAG laser (2.94 μm) or with CO 2 laser ( 9.6 μm) and later on etched with the phosphoric acid at 35%. After the use of the adhesive system, resin cones were made on the etched surfaces by both lasers and tensile bond strength tests were performed. All samples were observed at the SEM - there was an increase of the degree of fusion and resolidification in the irradiated enamel and dentin samples with the CO 2 laser (9.6 μm), creating a vitrified layer with tiny craters. With the Er:YAG laser (2.94 μm) there were typical morphological explosive microablation with the exposition of the tubules in the dentin.The surface acquired by the association of the CO 2 laser ( 9.6 μm) plus acid etching no longer presented the aspect of fusion being this layer completely removed. There were statistical significant differences among ali three methods of etching in the treatment of the enamel and dentin surface. The tensile bond strength test showed that etching of these enamel and dentin surfaces with acid exclusively (control group) presented great values, surpassing the values of the etching acquired with the Er:YAG laser (2.94 μ) plus acid or the CO 2 laser (9.6 μm) plus acid. With the parameters used in this experiment the Er:YAG laser (2.94 μm) showed to be more effective than the CO 2 laser (9.6 μm) for the hard dental surfaces etching procedure. (author)

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

Science.gov (United States)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

Influence of Nd:YAG laser on the bond strength of self-etching and conventional adhesive systems to dental hard tissues.

Science.gov (United States)

Marimoto, A K; Cunha, L A; Yui, K C K; Huhtala, M F R L; Barcellos, D C; Prakki, A; Gonçalves, S E P

2013-01-01

The aim of this study was to investigate the influence of Nd:YAG laser on the shear bond strength to enamel and dentin of total and self-etch adhesives when the laser was applied over the adhesives, before they were photopolymerized, in an attempt to create a new bonding layer by dentin-adhesive melting. One-hundred twenty bovine incisors were ground to obtain flat surfaces. Specimens were divided into two substrate groups (n=60): substrate E (enamel) and substrate D (dentin). Each substrate group was subdivided into four groups (n=15), according to the surface treatment accomplished: X (Xeno III self-etching adhesive, control), XL (Xeno III + laser Nd:YAG irradiation at 140 mJ/10 Hz for 60 seconds + photopolymerization, experimental), S (acid etching + Single Bond conventional adhesive, Control), and SL (acid etching + Single Bond + laser Nd:YAG at 140 mJ/10 Hz for 60 seconds + photopolymerization, experimental). The bonding area was delimited with 3-mm-diameter adhesive tape for the bonding procedures. Cylinders of composite were fabricated on the bonding area using a Teflon matrix. The teeth were stored in water at 37°C/48 h and submitted to shear testing at a crosshead speed of 0.5 mm/min in a universal testing machine. Results were analyzed with three-way analysis of variance (ANOVA; substrate, adhesive, and treatment) and Tukey tests (α=0.05). ANOVA revealed significant differences for the substrate, adhesive system, and type of treatment: lased or unlased (penamel groups were X=20.2 ± 5.61, XL=23.6 ± 4.92, S=20.8 ± 4.55, SL=22.1 ± 5.14 and for the dentin groups were X=14.1 ± 7.51, XL=22.2 ± 6.45, S=11.2 ± 5.77, SL=15.9 ± 3.61. For dentin, Xeno III self-etch adhesive showed significantly higher shear bond strength compared with Single Bond total-etch adhesive; Nd:YAG laser irradiation showed significantly higher shear bond strength compared with control (unlased). Nd:YAG laser application prior to photopolymerization of adhesive systems

Continuous-wave operation of a $(20\\bar{2}\\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

KAUST Repository

Megalini, Ludovico; Becerra, Daniel L.; Farrell, Robert M.; Pourhashemi, A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Cohen, Daniel A.

2015-01-01

© 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm², 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

Continuous-wave operation of a $(20\\bar{2}\\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

KAUST Repository

Megalini, Ludovico

2015-03-06

© 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm², 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

Modification of electrical properties of zinc oxide by continuous wave ytterbium fiber laser irradiation

International Nuclear Information System (INIS)

Kido, H; Takahashi, M; Tani, J; Abe, N; Tsukamoto, M

2011-01-01

The polycrystalline plate-like ZnO samples were irradiated by a continuous wave Yb fiber laser and electrical properties of modified layer were investigated. The laser beam of spot size of 16 μm in diameter was scanned on the surface at a velocity of 5mm/s. There was a threshold for the laser modification. The laser etched grooves were formed above laser power of 20 W. The laser etched depth increased in relation to the laser power, 0.46 mm at 20 W and 5.0 mm at 126 W. The surface layers of laser etched grooves were modified in color and electrical property. The color changed from light yellow to black, and the electrical resistivity drastically decreased from initial value of 1.1x10 5 Ωcm to 3.2x10 -1 Ωcm at 56 W, 2.8x10 -1 Ωcm at 91 W, and 2.0x10 -1 Ωcm at 126 W. The Hall measurement showed that the modified surface layer was an n-type semiconductor and carrier concentration of the layer was 1.5x10 17 cm -3 at 56 W, 7.2x10 17 cm -3 at 91 W, and 1.9x10 18 cm -3 at 126 W.

Laser desorption/ionization mass spectrometry of lipids using etched silver substrates.

Science.gov (United States)

Schnapp, Andreas; Niehoff, Ann-Christin; Koch, Annika; Dreisewerd, Klaus

2016-07-15

Silver-assisted laser desorption/ionization mass spectrometry can be used for the analysis of small molecules. For example, adduct formation with silver cations enables the molecular analysis of long-chain hydrocarbons, which are difficult to ionize via conventional matrix-assisted laser desorption ionization (MALDI). Here we used highly porous silver foils, produced by etching with nitric acid, as sample substrates for LDI mass spectrometry. As model system for the analysis of complex lipid mixtures, cuticular extracts of fruit flies (Drosophila melanogaster) and worker bees (Apis mellifera) were investigated. The mass spectra obtained by spotting extract onto the etched silver substrates demonstrate the sensitive detection of numerous lipid classes such as long-chain saturated and unsaturated hydrocarbons, fatty acyl alcohols, wax esters, and triacylglycerols. MS imaging of cuticular surfaces with a lateral resolution of a few tens of micrometers became possible after blotting, i.e., after transferring lipids by physical contact with the substrate. The examples of pheromone-producing male hindwings of the squinting bush brown butterfly (Bicyclus anynana) and a fingermark are shown. Because the substrates are also easy to produce, they provide a viable alternative to colloidal silver nanoparticles and other so far described silver substrates. Copyright © 2016 Elsevier Inc. All rights reserved.

Reduction of Residual Stresses in Sapphire Cover Glass Induced by Mechanical Polishing and Laser Chamfering Through Etching

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Shih-Jeh Wu

2016-10-01

Full Text Available Sapphire is a hard and anti-scratch material commonly used as cover glass of mobile devices such as watches and mobile phones. A mechanical polishing using diamond slurry is usually necessary to create mirror surface. Additional chamfering at the edge is sometimes needed by mechanical grinding. These processes induce residual stresses and the mechanical strength of the sapphire work piece is impaired. In this study wet etching by phosphate acid process is applied to relief the induced stress in a 1” diameter sapphire cover glass. The sapphire is polished before the edge is chamfered by a picosecond laser. Residual stresses are measured by laser curvature method at different stages of machining. The results show that the wet etching process effectively relief the stress and the laser machining does not incur serious residual stress.

Micro-fabricated packed gas chromatography column based on laser etching technology.

Science.gov (United States)

Sun, J H; Guan, F Y; Zhu, X F; Ning, Z W; Ma, T J; Liu, J H; Deng, T

2016-01-15

In this work, a micro packed gas chromatograph column integrated with a micro heater was fabricated by using laser etching technology (LET) for analyzing environmental gases. LET is a powerful tool to etch deep well-shaped channels on the glass wafer, and it is the most effective way to increase depth of channels. The fabricated packed GC column with a length of over 1.6m, to our best knowledge, which is the longest so far. In addition, the fabricated column with a rectangular cross section of 1.2mm (depth) × 0.6mm (width) has a large aspect ratio of 2:1. The results show that the fabricated packed column had a large sample capacity, achieved a separation efficiency of about 5800 plates/m and eluted highly symmetrical Gaussian peaks. Copyright © 2015 Elsevier B.V. All rights reserved.

Marginal microleakage in vitro study of occlusal fissures sealing prepared and etched or not with Er: YAG laser; Avaliacao in vitro da microinfiltracao marginal em selamentos oclusais preparados e condicionados ou nao pelo laser de Er:YAG

Energy Technology Data Exchange (ETDEWEB)

Youssef, Fernanda de Almeida

2004-07-01

The aim of this in vitro study was to evaluate the degree of marginal microleakage in occlusal sealing by invasive techniques, after preparation with Er:YAG laser followed or not by Er:YAG laser etching and compared to the conventional technique. Thirty human premolars were divided into three groups: A (control group) - cavities were prepared with high speed and etched with 37% orthophosphoric acid; group B - cavities were prepared with Er:YAG (350 mJ, 4 Hz and 112 J /cm{sup 2}) and etched with 37% orthophosphoric acid; group C - cavities were prepared with Er:YAG laser (350 mJ, 4 Hz and 112 J/cm{sup 2}), and etched with Er:YAG laser (80 mJ, 4 Hz and 25 m/cm{sup 2}). All cavities were treated with the same adhesive system and restored with flow composite according to manufacturer instructions. Teeth were submitted to thermal cycling procedures and immersed in 50% Silver Nitrate Solutions for 8 hours in total darkness. Teeth were sectioned longitudinally in the bucco-lingual direction, in slices of 1 mm thick. Each slice was immersed into photo developing solution under 16 hours of fluorescent light. Slices were photographed and microleakage was scored from 0 to 7 J by three standard examiners. Results showed statistically significant differences for group C (Er:YAG laser preparation and etching). We concluded that Er:YAG laser can be used for cavity preparation of occlusal sealing, like the conventional high speed method. However, this laser, used as enamel etching agent, could not promote an adequate surface for adhesive procedures. (author)

Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

Science.gov (United States)

Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

2015-02-01

The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p enamel and dentin (p > 0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p > 0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive.

Modification of electrical properties of zinc oxide by continuous wave ytterbium fiber laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Kido, H; Takahashi, M; Tani, J [Electronic Materials Research Division, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan); Abe, N; Tsukamoto, M, E-mail: kido@omtri.or.jp [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2011-05-15

The polycrystalline plate-like ZnO samples were irradiated by a continuous wave Yb fiber laser and electrical properties of modified layer were investigated. The laser beam of spot size of 16 {mu}m in diameter was scanned on the surface at a velocity of 5mm/s. There was a threshold for the laser modification. The laser etched grooves were formed above laser power of 20 W. The laser etched depth increased in relation to the laser power, 0.46 mm at 20 W and 5.0 mm at 126 W. The surface layers of laser etched grooves were modified in color and electrical property. The color changed from light yellow to black, and the electrical resistivity drastically decreased from initial value of 1.1x10{sup 5} {Omega}cm to 3.2x10{sup -1} {Omega}cm at 56 W, 2.8x10{sup -1} {Omega}cm at 91 W, and 2.0x10{sup -1} {Omega}cm at 126 W. The Hall measurement showed that the modified surface layer was an n-type semiconductor and carrier concentration of the layer was 1.5x10{sup 17} cm{sup -3} at 56 W, 7.2x10{sup 17} cm{sup -3} at 91 W, and 1.9x10{sup 18} cm{sup -3} at 126 W.

Bond strength of etch-and-rinse and self-etch adhesive systems to enamel and dentin irradiated with a novel CO2 9.3 μm short-pulsed laser for dental restorative procedures.

Science.gov (United States)

Rechmann, Peter; Bartolome, N; Kinsel, R; Vaderhobli, R; Rechmann, B M T

2017-12-01

The objective of this study was to evaluate the influence of CO 2 9.3 μm short-pulsed laser irradiation on the shear bond strength of composite resin to enamel and dentin. Two hundred enamel and 210 dentin samples were irradiated with a 9.3 µm carbon dioxide laser (Solea, Convergent Dental, Inc., Natick, MA) with energies which either enhanced caries resistance or were effective for ablation. OptiBond Solo Plus [OptiBondTE] (Kerr Corporation, Orange, CA) and Peak Universal Bond light-cured adhesive [PeakTE] (Ultradent Products, South Jordan, UT) were used. In addition, Scotchbond Universal [ScotchbondSE] (3M ESPE, St. Paul, MN) and Peak SE self-etching primer with Peak Universal Bond light-cured adhesive [PeakSE] (Ultradent Products) were tested. Clearfil APX (Kuraray, New York, NY) was bonded to the samples. After 24 h, a single plane shear bond test was performed. Using the caries preventive setting on enamel resulted in increased shear bond strength for all bonding agents except for self-etch PeakSE. The highest overall bond strength was seen with PeakTE (41.29 ± 6.04 MPa). Etch-and-rinse systems achieved higher bond strength values to ablated enamel than the self-etch systems did. PeakTE showed the highest shear bond strength with 35.22 ± 4.40 MPa. OptiBondTE reached 93.8% of its control value. The self-etch system PeakSE presented significantly lower bond strength. The shear bond strength to dentin ranged between 19.15 ± 3.49 MPa for OptiBondTE and 43.94 ± 6.47 MPa for PeakSE. Etch-and-rinse systems had consistently higher bond strength to CO 2 9.3 µm laser-ablated enamel. Using the maximum recommended energy for dentin ablation, the self-etch system PeakSE reached the highest bond strength (43.9 ± 6.5 MPa).

Osteogenic potential of laser modified and conditioned titanium zirconium surfaces

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P David Charles

2016-01-01

Full Text Available Statement of Problem: The osseointegration of dental implant is related to their composition and surface treatment. Titanium zirconium (TiZr has been introduced as an alternative to the commercially pure titanium and its alloys as dental implant material, which is attributed to its superior mechanical and biological properties. Surface treatments of TiZr have been introduced to enhance their osseointegration ability; however, reliable, easy to use surface modification technique has not been established. Purpose: The purpose of this study was to evaluate and compare the effect of neodymium-doped yttrium aluminum garnet (Nd-YAG laser surface treatment of TiZr implant alloy on their osteogenic potential. Materials and Methods: Twenty disc-shaped samples of 5 mm diameter and 2 mm height were milled from the TiZr alloy ingot. The polished discs were ultrasonically cleaned in distilled water. Ten samples each were randomly selected as Group A control samples and Group B consisted of Nd-YAG laser surface etched and conditioned test samples. These were evaluated for cellular response. Cellular adhesion and proliferation were quantified, and the results were statistically analyzed using nonparametric analysis. Cellular morphology was observed using electron and epiflurosence microscopy. Results: Nd-YAG laser surface modified and conditioned TiZr samples increased the osteogenic potential. Conclusion: Nd-YAG laser surface modification of TiZr, improves the cellular activity, surface roughness, and wettability, thereby increasing the osteogenic potential.

Temperature increase beneath etched dentin discs during composite polymerization.

Science.gov (United States)

Karaarslan, Emine Sirin; Secilmis, Asli; Bulbul, Mehmet; Yildirim, Cihan; Usumez, Aslihan

2011-01-01

The purpose of this in vitro study was to measure the temperature increase during the polymerization of a composite resin beneath acid-etched or laser-etched dentin discs. The irradiation of dentin with an Er:YAG laser may have a positive effect on the thermal conductivity of dentin. This technique has not been studied extensively. Forty dentin discs (5 mm in diameter and 0.5 or 1 mm in height) were prepared from extracted permanent third molars. These dentin discs were etched with 20% orthophosphoric acid or an Er:YAG laser, and were then placed on an apparatus developed to measure temperature increases. The composite resin was polymerized with a high-intensity quartz tungsten halogen (HQTH) or light-emitting diode unit (LED). The temperature increase was measured under the dentin disc with a J-type thermocouple wire that was connected to a data logger. Five measurements were made for each dentin disc, curing unit, and etching system combination. Differences between the initial and the highest temperature readings were taken, and the five calculated temperature changes were averaged to determine the value of the temperature increase. Statistical analysis was performed with a three-way ANOVA and Tukey HSD tests at a 0.05 level of significance. Further SEM examinations were performed. The temperature increase values varied significantly, depending on etching systems (p < 0.05), dentin thicknesses (p < 0.05), and curing units (p < 0.05). Temperature increases measured beneath laser-etched discs were significantly higher than those for acid-etched dentin discs (p < 0.05). The HQTH unit induced significantly higher temperature increases than the LED unit (p < 0.05). The LED unit induced the lowest temperature change (5.2°C) in the 1-mm, acid-etched dentin group. The HQTH unit induced the highest temperature change (10.4°C) for the 0.5-mm, laser-etched dentin group. The risk of heat-induced pulpal damage should be taken into consideration

Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon

International Nuclear Information System (INIS)

Chen, H. Y.; Peng, Y.; Hong, M.; Zhang, Y. B.; Cai, Bin; Zhu, Y. M.; Yuan, G. D.; Zhang, Y.; Liu, Z. Q.; Wang, J. X.; Li, J. M.

2014-01-01

We report an enhanced conversion efficiency of femtosecond-laser treated silicon solar cells by surface modification of anisotropic-etching. The etching improves minority carrier lifetime inside modified black silicon area substantially; moreover, after the etching, an inverted pyramids/upright pyramids mixed texture surface is obtained, which shows better photon capturing capability than that of conventional pyramid texture. Combing of these two merits, the reformed solar cells show higher conversion efficiency than that of conventional pyramid textured cells. This work presents a way for fabricating high performance silicon solar cells, which can be easily applied to mass-production

Multifunctional Material Structures Based on Laser-Etched Carbon Nanotube Arrays

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Aline Emplit

2014-09-01

Full Text Available High-power electronics in the transportation and aerospace sectors need size and weight reduction. Multifunctional and multistructured materials are currently being developed to couple electromagnetic (EM and thermal properties, i.e., shielding against electromagnetic impulsions, and thermal management across the thermal interface material (TIM. In this work, we investigate laser-machined patterned carbon nanotube (CNT micro-brushes as an alternative to metallic structures for driving simultaneously EM and heat propagation. The thermal and electromagnetic response of the CNT array is expected to be sensitive to the micro-structured pattern etched in the CNT brush.

Laser-Modified Surface Enhances Osseointegration and Biomechanical Anchorage of Commercially Pure Titanium Implants for Bone-Anchored Hearing Systems

Science.gov (United States)

Omar, Omar; Simonsson, Hanna; Palmquist, Anders; Thomsen, Peter

2016-01-01

Osseointegrated implants inserted in the temporal bone are a vital component of bone-anchored hearing systems (BAHS). Despite low implant failure levels, early loading protocols and simplified procedures necessitate the application of implants which promote bone formation, bone bonding and biomechanical stability. Here, screw-shaped, commercially pure titanium implants were selectively laser ablated within the thread valley using an Nd:YAG laser to produce a microtopography with a superimposed nanotexture and a thickened surface oxide layer. State-of-the-art machined implants served as controls. After eight weeks’ implantation in rabbit tibiae, resonance frequency analysis (RFA) values increased from insertion to retrieval for both implant types, while removal torque (RTQ) measurements showed 153% higher biomechanical anchorage of the laser-modified implants. Comparably high bone area (BA) and bone-implant contact (BIC) were recorded for both implant types but with distinctly different failure patterns following biomechanical testing. Fracture lines appeared within the bone ~30–50 μm from the laser-modified surface, while separation occurred at the bone-implant interface for the machined surface. Strong correlations were found between RTQ and BIC and between RFA at retrieval and BA. In the endosteal threads, where all the bone had formed de novo, the extracellular matrix composition, the mineralised bone area and osteocyte densities were comparable for the two types of implant. Using resin cast etching, osteocyte canaliculi were observed directly approaching the laser-modified implant surface. Transmission electron microscopy showed canaliculi in close proximity to the laser-modified surface, in addition to a highly ordered arrangement of collagen fibrils aligned parallel to the implant surface contour. It is concluded that the physico-chemical surface properties of laser-modified surfaces (thicker oxide, micro- and nanoscale texture) promote bone bonding

Morphology of resin-dentin interfaces after Er,Cr:YSGG laser and acid etching preparation and application of different bonding systems.

Science.gov (United States)

Beer, Franziska; Buchmair, Alfred; Körpert, Wolfram; Marvastian, Leila; Wernisch, Johann; Moritz, Andreas

2012-07-01

The goal of this study was to show the modifications in the ultrastructure of the dentin surface morphology following different surface treatments. The stability of the adhesive compound with dentin after laser preparation compared with conventional preparation using different bonding agents was evaluated. An Er,Cr:YSGG laser and 36% phosphoric acid in combination with various bonding systems were used. A total of 100 caries-free human third molars were used in this study. Immediately after surgical removal teeth were cut using a band saw and 1-mm thick dentin slices were created starting at a distance of 4 mm from the cusp plane to ensure complete removal of the enamel. The discs were polished with silicon carbide paper into rectangular shapes to a size of 6 × 4 mm (±0,2 mm).The discs as well as the remaining teeth stumps were stored in 0.9% NaCl at room temperature. The specimens were divided into three main groups (group I laser group, group II etch group, group III laser and etch group) and each group was subdivided into three subgroups which were allocated to the different bonding systems (subgroup A Excite, subgroup B Scotchbond, subgroup C Syntac). Each disc and the corresponding tooth stump were treated in the same way. After preparation the bonding composite material was applied according to the manufacturers' guidelines in a hollow tube of 2 mm diameter to the disc as well as to the corresponding tooth stump. Shear bond strength testing and environmental scanning electron microscopy were used to assess the morphology and stability of the resin-dentin interface. The self-etching bonding system showed the highest and the most constant shear values in all three main groups, thus enabling etching with phosphoric acid after laser preparation to be avoided. Thus we conclude that laser preparation creates a surface texture that allows prediction of the quality of the restoration without the risk of negative influences during the following treatment steps. This

Size-dependent Fano Interaction in the Laser-etched Silicon Nanostructures

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Kumar Rajesh

2008-01-01

Full Text Available AbstractPhoto-excitation and size-dependent Raman scattering studies on the silicon (Si nanostructures (NSs prepared by laser-induced etching are presented here. Asymmetric and red-shifted Raman line-shapes are observed due to photo-excited Fano interaction in the quantum confined nanoparticles. The Fano interaction is observed between photo-excited electronic transitions and discrete phonons in Si NSs. Photo-excited Fano studies on different Si NSs show that the Fano interaction is high for smaller size of Si NSs. Higher Fano interaction for smaller Si NSs is attributed to the enhanced interference between photo-excited electronic Raman scattering and phonon Raman scattering.

Micro-Bulges Investigation on Laser Modified Tool Steel Surface

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Fauzun Fazliana

2017-01-01

Full Text Available This paper presents micro-bulges investigation on laser modified tool steel. The aim of this study is to understand the effect of laser irradiance and interaction time on surface morphology configuration. An Nd:YAG laser system with TEM00 pulse processing mode was used to modify the samples. Metallographic study shows samples were analyzed for focal position effect on melted pool size, angle of peaks geometry and laser modified layer depth. Surface morphology were analyzed for surface roughness. Laser modified layer shows depth ranged between 42.22 and 420.12 μm. Angle of peak bulge was found to be increase with increasing peak power. The maximum roughness, Ra, achieved in modified H13 was 21.10 μm. These findings are significant to enhance surface properties of laser modified steel and cast iron for dies and high wear resistance applications.

Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

Energy Technology Data Exchange (ETDEWEB)

Boukhicha, Rym, E-mail: rym.boukhicha@polytechnique.edu [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Charpentier, Coralie [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Prod' Homme, Patricia [Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Roca i Cabarrocas, Pere [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Lerat, Jean-François; Emeraud, Thierry [Photovoltaic Business Unit, Excico Group NV, Kempische Steenweg 305/2, B-3500 Hasselt (Belgium); Johnson, Erik [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

2014-03-31

We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency magnetron sputtering from a ceramic target at room temperature. The effects of the process pressure (0.11–1.2 Pa) and oxygen flow (0–2 sccm) on the optical and electrical properties of ZnO:Al thin films have been studied both before and after an excimer laser annealing treatment followed by a dilute HCl chemical etch. The as-deposited films varied from completely opaque to yellowish. Thin film laser annealing dramatically improves the optical properties of the most opaque thin films. After laser annealing at the optimum fluence, the average transmittance in the visible wavelength range was around 80% for most films, and reasonable electrical performance was obtained for the films deposited at lower pressures and without oxygen flux (7 Ω/□ for films of 1 μm). After etching, all films displayed a dramatic improvement in haze, but only the low pressure, low oxygen films retained acceptable electrical properties (< 11 Ω/□). - Highlights: • Al:ZnO thin films were deposited at room temperature. • The ZnO:Al films were excimer laser annealed and then wet-etched. • The optical and electrical properties were studied in details.

Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

Science.gov (United States)

Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

2016-01-01

The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

Microleakage after Thermocycling of Three Self-Etch Adhesives under Resin-Modified Glass-Ionomer Cement Restorations

Directory of Open Access Journals (Sweden)

Sabine O. Geerts

2010-01-01

Full Text Available This study was designed to evaluate microleakage that appeared on Resin-Modified Glass-Ionomer Cement (RMGIC restorations. Sixty class V cavities (h×w×l=2mm×2mm×3mm were cut on thirty extracted third molars, which were randomly allocated to three experimental groups. All the buccal cavities were pretreated with polyacrylic acid, whereas the lingual cavities were treated with three one-step Self-Etch adhesives, respectively, Xeno III (Dentsply Detrey GmbH, Konstanz, Germany, iBond exp (Heraeus Kulzer gmbH & Co. KG, Hanau, Germany, and Adper Prompt-L-Pop (3M ESPE AG, Dental products Seefeld, Germany. All cavities were completely filled with RMGIC, teeth were thermocycled for 800 cycles, and leakage was evaluated. Results were expressed as means ± standard deviations (SDs. Microleakage scores were analysed by means of generalized linear mixed models (GLMMs assuming an ordinal logistic link function. All results were considered to be significant at the 5% critical level (<.05. The results showed that bonding RMGIC to dentin with a Self-Etch adhesive rather than using polyacrylic acid did not influence microleakage scores (=.091, except for one tested Self-Etch adhesive, namely, Xeno III (<.0001. Nevertheless, our results did not show any significant difference between the three tested Self-Etch adhesive systems. In conclusion, the pretreatment of dentin with Self-Etch adhesive system, before RMGIC filling, seems to be an alternative to the conventional Dentin Conditioner for the clinicians as suggested by our results (thermocycling and others (microtensile tests.

Evaluation of the tensile bond strength of an adhesive system self-etching in dentin irradiated with Er:YAG laser; Avaliacao da resistencia a tracao de um sistema adesivo self-etching em dentina irradiada com Er:YAG laser

Energy Technology Data Exchange (ETDEWEB)

Mello, Andrea Malluf Dabul de

2000-07-01

Since Buonocore (1955), several researchers have been seeking for the best adhesive system and treatment for the enamel and dentin surfaces. The use of the acid has been presented as one of the best techniques of dentin conditioning , because this promotes the removal of the 'smear layer and exhibition of dentinal structure, for a best penetration and micro- retention of the adhesive system. However, some conditioning methods have been appearing in the literature, for the substitution or interaction with the acid substances, as the laser. The objective of this work is to evaluate the tensile bond strength of the adhesive system self-etching' associated to a composed resin, in dentin surfaces conditioned with the Er:YAG laser. For this study, freshly extracted human teeth were used and in each one the dentinal surfaces , which were treated with three sandpapers of different granulations (120,400,600), to obtain a standard of the smear layer, before the irradiation of the laser and of the restoring procedure. After these procedures the specimens were storage in distilled water at 37 deg C for 24 hours. Soon after, they were submitted to the tensile strength test .After analyzing the results, we can concluded that the use of the Er:YAG laser can substitute the drill without the need of conditioning, when using the adhesive system 'self-etching' in the dentinal surfaces because there was a decline in the strength of adhesion in the groups conditioned with the laser. (author)

Simple fabrication of closed-packed IR microlens arrays on silicon by femtosecond laser wet etching

Science.gov (United States)

Meng, Xiangwei; Chen, Feng; Yang, Qing; Bian, Hao; Du, Guangqing; Hou, Xun

2015-10-01

We demonstrate a simple route to fabricate closed-packed infrared (IR) silicon microlens arrays (MLAs) based on femtosecond laser irradiation assisted by wet etching method. The fabricated MLAs show high fill factor, smooth surface and good uniformity. They can be used as optical devices for IR applications. The exposure and etching parameters are optimized to obtain reproducible microlens with hexagonal and rectangular arrangements. The surface roughness of the concave MLAs is only 56 nm. This presented method is a maskless process and can flexibly change the size, shape and the fill factor of the MLAs by controlling the experimental parameters. The concave MLAs on silicon can work in IR region and can be used for IR sensors and imaging applications.

Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

International Nuclear Information System (INIS)

Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

2008-01-01

Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process

Directory of Open Access Journals (Sweden)

Laixi Sun

2018-04-01

Full Text Available The reactive ion etching (RIE process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused silica surface is very sensitive to the RIE process which can be significantly optimized by changing the plasma generating conditions such as discharge mode, etchant gas and electrode material. Additionally, an optimized RIE process is proposed to thoroughly remove polishing-introduced contamination and efficiently prevent the introduction of other contamination during the etching process. The research demonstrates the feasibility of improving the damage performance of fused silica optics by using the RIE technique.

Holes generation in glass using large spot femtosecond laser pulses

Science.gov (United States)

Berg, Yuval; Kotler, Zvi; Shacham-Diamand, Yosi

2018-03-01

We demonstrate high-throughput, symmetrical, holes generation in fused silica glass using a large spot size, femtosecond IR-laser irradiation which modifies the glass properties and yields an enhanced chemical etching rate. The process relies on a balanced interplay between the nonlinear Kerr effect and multiphoton absorption in the glass which translates into symmetrical glass modification and increased etching rate. The use of a large laser spot size makes it possible to process thick glasses at high speeds over a large area. We have demonstrated such fabricated holes with an aspect ratio of 1:10 in a 1 mm thick glass samples.

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

Directory of Open Access Journals (Sweden)

P. Heydari

2014-10-01

Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE

Science.gov (United States)

Tran, N. T.; Breivik, Magnus; Patra, S. K.; Fimland, Bjørn-Ove

2014-05-01

GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within +/- 10 nm.

Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

Energy Technology Data Exchange (ETDEWEB)

Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2008-10-01

Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

Tensile bond strength and SEM analysis of enamel etched with Er:YAG laser and phosphoric acid: a comparative study in vitro

International Nuclear Information System (INIS)

Sasaki, Luis H.; Tanaka, Celso Shin-Ite; Lobo, Paulo D.C.; Villaverde, Antonio B.; Moriyama, Eduardo H.; Brugnera Junior, Aldo; Moriyama, Yumi; Watanabe, Ii-Sei

2008-01-01

Er:YAG laser has been studied as a potential tool for restorative dentistry due to its ability to selectively remove oral hard tissue with minimal or no thermal damage to the surrounding tissues. The purpose of this study was to evaluate in vitro the tensile bond strength (TBS) of an adhesive/composite resin system to human enamel surfaces treated with 37% phosphoric acid, Er:YAG laser (λ=2.94 μm) with a total energy of 16 J (80 mJ/pulse, 2Hz, 200 pulses, 250 ms pulse width), and Er:YAG laser followed by phosphoric acid etching. Analysis of the treated surfaces was performed by scanning electron microscopy (SEM) to assess morphological differences among the groups. TBS means (in MPa) were as follows: Er:YAG laser + acid (11.7 MPa) > acid (8.2 MPa) > Er:YAG laser (6.1 MPa), with the group treated with laser+acid being significantly from the other groups (p=0.0006 and p= 0.00019, respectively). The groups treated with acid alone and laser alone were significantly different from each other (p=0.0003). The SEM analysis revealed morphological changes that corroborate the TBS results, suggesting that the differences in TBS means among the groups are related to the different etching patterns produced by each type of surface treatment. The findings of this study indicate that the association between Er:YAG laser and phosphoric acid can be used as a valuable resource to increase bond strength to laser-prepared enamel. (author)

Laser-induced particle size tuning and structural transformations in germanium nanoparticles prepared by stain etching and colloidal synthesis route

Energy Technology Data Exchange (ETDEWEB)

Karatutlu, Ali, E-mail: a.karatutlu@qmul.ac.uk, E-mail: ali.karatutlu@bou.edu.tr [Centre for Condensed Matter and Materials Physics, School of Physics and Astronomy, Queen Mary, University of London, London E1 4NS (United Kingdom); Electrical and Electronics Engineering, Bursa Orhangazi University, 16310 Yıldırım/Bursa (Turkey); Little, William; Ersoy, Osman; Zhang, Yuanpeng; Sapelkin, Andrei [Centre for Condensed Matter and Materials Physics, School of Physics and Astronomy, Queen Mary, University of London, London E1 4NS (United Kingdom); Seker, Isa [Bio-Nanotechnology Research and Development Centre, Fatih University, 34500 Buyukcekmece, Istanbul (Turkey)

2015-12-28

In this study, with the aid of Raman measurements, we have observed transformations in small (∼3 nm and ∼10 nm) free-standing Ge nanoparticles under laser light exposure. The nanoparticles were obtained by the chemical stain etching of a monocrystalline Ge wafer and of Ge powder and by colloidal synthesis route. We found that the transformation path depends on laser power and exposure time. At relatively low values of the laser power (2 mW) over a period of 100 min, the Raman signal indicates transformation of the sample from a nanocrystaline to bulk-like state, followed by partial oxidation and finally a conversion of the entire sample into alpha-quartz type GeO{sub 2}. However, when the laser power is set at 60 mW, we observed a heat release during an explosive crystallization of the nanocrystalline material into bulk Ge without noticeable signs of oxidation. Together with the transmission electron microscopy measurements, these results suggest that the chemical stain etching method for the preparation of porous Ge may not be a top-down process as has been widely considered, but a bottom up one. Systematic studies of the laser exposure on Ge nanoparticles prepared by colloidal synthesis results in the fact that the explosive crystallisation is common for H-terminated and partially disordered Ge nanoparticles regardless of its particle size. We suggest possible bio-medical applications for the observed phenomena.

Evaluation of the tensile bond strength of an adhesive system self-etching in dentin irradiated with Er:YAG laser

International Nuclear Information System (INIS)

Mello, Andrea Malluf Dabul de

2000-01-01

Since Buonocore (1955), several researchers have been seeking for the best adhesive system and treatment for the enamel and dentin surfaces. The use of the acid has been presented as one of the best techniques of dentin conditioning , because this promotes the removal of the 'smear layer and exhibition of dentinal structure, for a best penetration and micro- retention of the adhesive system. However, some conditioning methods have been appearing in the literature, for the substitution or interaction with the acid substances, as the laser. The objective of this work is to evaluate the tensile bond strength of the adhesive system self-etching' associated to a composed resin, in dentin surfaces conditioned with the Er:YAG laser. For this study, freshly extracted human teeth were used and in each one the dentinal surfaces , which were treated with three sandpapers of different granulations (120,400,600), to obtain a standard of the smear layer, before the irradiation of the laser and of the restoring procedure. After these procedures the specimens were storage in distilled water at 37 deg C for 24 hours. Soon after, they were submitted to the tensile strength test .After analyzing the results, we can concluded that the use of the Er:YAG laser can substitute the drill without the need of conditioning, when using the adhesive system 'self-etching' in the dentinal surfaces because there was a decline in the strength of adhesion in the groups conditioned with the laser. (author)

Comparative study of etched enamel and dentin for the adhesion of composite resins with the Er:YAG 2,94 {mu}m laser and CO{sub 2} 9,6 {mu}m laser: morphological (SEM) and tensile bond strength analysis; Estudo comparativo do condicionamento do esmalte e dentina para a adesao de resinas compostas com os lasers Er:YAG 2,94 {mu}m e com o laser CO{sub 2} de 9,6 {mu}m: analise morfologica e de resistencia a tracao

Energy Technology Data Exchange (ETDEWEB)

Marraccini, Tarso Mugnai

2002-07-01

The aim of this study was to evaluate and compare the tensile bond strength of a composite resin adhered to the enamel and dentin which have received superficial irradiation with an Er:YAG laser (2.94 {mu}m) or with CO{sub 2} laser ( 9.6 {mu}m) and later on etched with the phosphoric acid at 35%. After the use of the adhesive system, resin cones were made on the etched surfaces by both lasers and tensile bond strength tests were performed. All samples were observed at the SEM - there was an increase of the degree of fusion and resolidification in the irradiated enamel and dentin samples with the CO{sub 2} laser (9.6 {mu}m), creating a vitrified layer with tiny craters. With the Er:YAG laser (2.94 {mu}m) there were typical morphological explosive microablation with the exposition of the tubules in the dentin.The surface acquired by the association of the CO{sub 2} laser ( 9.6 {mu}m) plus acid etching no longer presented the aspect of fusion being this layer completely removed. There were statistical significant differences among ali three methods of etching in the treatment of the enamel and dentin surface. The tensile bond strength test showed that etching of these enamel and dentin surfaces with acid exclusively (control group) presented great values, surpassing the values of the etching acquired with the Er:YAG laser (2.94 {mu}) plus acid or the CO{sub 2} laser (9.6 {mu}m) plus acid. With the parameters used in this experiment the Er:YAG laser (2.94 {mu}m) showed to be more effective than the CO{sub 2} laser (9.6 {mu}m) for the hard dental surfaces etching procedure. (author)

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

Atomic diffusion in laser surface modified AISI H13 steel

Science.gov (United States)

Aqida, S. N.; Brabazon, D.; Naher, S.

2013-07-01

This paper presents a laser surface modification process of AISI H13 steel using 0.09 and 0.4 mm of laser spot sizes with an aim to increase surface hardness and investigate elements diffusion in laser modified surface. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, pulse repetition frequency (PRF), and overlap percentage. The hardness properties were tested at 981 mN force. Metallographic study and energy dispersive X-ray spectroscopy (EDXS) were performed to observe presence of elements and their distribution in the sample surface. Maximum hardness achieved in the modified surface was 1017 HV0.1. Change of elements composition in the modified layer region was detected in the laser modified samples. Diffusion possibly occurred for C, Cr, Cu, Ni, and S elements. The potential found for increase in surface hardness represents an important method to sustain tooling life. The EDXS findings signify understanding of processing parameters effect on the modified surface composition.

Comparison of filters: Inkjet printed on PEN substrate versus a laser-etched on LCP substrate

KAUST Repository

Arabi, Eyad A.

2014-10-01

In this paper, microstrip-based bandpass filters on polyethylene naphthalate (PEN) and liquid crystal polymers (LCP) are presented to investigate the performance of filters on ultra-thin substrates. PEN (with a thickness of 120 μm) has been characterized and used for a filter for the first time. In addition to being low cost and transparent, it demonstrates comparable RF performance to LCP. The conductor losses are compared by fabricating filters with inkjet printed lines as well as laser etched copper clad LCP sheets. With 5 layers of inkjet printing, and a curing temperature below 200°C, a final silver thickness of 2 μm and conductivity of 9.6 × 106 S/m are achieved. The designs are investigated at two frequencies, 24 GHz as well as 5 GHz to assess their performance at high and low frequencies respectively. The 24 GHz inkjet printed filter shows an insertion loss of 2 dB, while the 5 GHz design gives an insertion loss of 8 dB. We find that thin substrates have a strong effect on the insertion loss of filters especially as the frequency is reduced. The same design, realized on LCP (thickness of 100 μm) through laser etching, demonstrates a very similar performance, thus verifying this finding. © 2014 European Microwave Association.

Comparison of filters: Inkjet printed on PEN substrate versus a laser-etched on LCP substrate

KAUST Repository

Arabi, Eyad A.; McKerricher, Garret; Shamim, Atif

2014-01-01

In this paper, microstrip-based bandpass filters on polyethylene naphthalate (PEN) and liquid crystal polymers (LCP) are presented to investigate the performance of filters on ultra-thin substrates. PEN (with a thickness of 120 μm) has been characterized and used for a filter for the first time. In addition to being low cost and transparent, it demonstrates comparable RF performance to LCP. The conductor losses are compared by fabricating filters with inkjet printed lines as well as laser etched copper clad LCP sheets. With 5 layers of inkjet printing, and a curing temperature below 200°C, a final silver thickness of 2 μm and conductivity of 9.6 × 106 S/m are achieved. The designs are investigated at two frequencies, 24 GHz as well as 5 GHz to assess their performance at high and low frequencies respectively. The 24 GHz inkjet printed filter shows an insertion loss of 2 dB, while the 5 GHz design gives an insertion loss of 8 dB. We find that thin substrates have a strong effect on the insertion loss of filters especially as the frequency is reduced. The same design, realized on LCP (thickness of 100 μm) through laser etching, demonstrates a very similar performance, thus verifying this finding. © 2014 European Microwave Association.

Combined laser and atomic force microscope lithography on aluminum: Mask fabrication for nanoelectromechanical systems

DEFF Research Database (Denmark)

Berini, Abadal Gabriel; Boisen, Anja; Davis, Zachary James

1999-01-01

A direct-write laser system and an atomic force microscope (AFM) are combined to modify thin layers of aluminum on an oxidized silicon substrate, in order to fabricate conducting and robust etch masks with submicron features. These masks are very well suited for the production of nanoelectromecha......A direct-write laser system and an atomic force microscope (AFM) are combined to modify thin layers of aluminum on an oxidized silicon substrate, in order to fabricate conducting and robust etch masks with submicron features. These masks are very well suited for the production...... writing, and to perform submicron modifications by AFM oxidation. The mask fabrication for a nanoscale suspended resonator bridge is used to illustrate the advantages of this combined technique for NEMS. (C) 1999 American Institute of Physics. [S0003-6951(99)00221-1]....

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Dry etching technologies for the advanced binary film

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Laser micromachining of chemically altered polymers

Energy Technology Data Exchange (ETDEWEB)

Lippert, T.

1998-08-01

During the last decade laser processing of polymers has become an important field of applied and fundamental research. One of the most promising proposals, to use laser ablation as dry etching technique in photolithography, has not yet become an industrial application. Many disadvantages of laser ablation, compared to conventional photolithography, are the result of the use of standard polymers. These polymers are designed for totally different applications, but are compared to the highly specialized photoresist. A new approach to laser polymer ablation will be described; the development of polymers, specially designed for high resolution laser ablation. These polymers have photolabile groups in the polymer backbone, which decompose upon laser irradiation or standard polymers are modified for ablation at a specific irradiation wavelength. The absorption maximum can be tailored for specific laser emissino lines, e.g. 351, 308 and 248 nm lines of excimer lasers. The authors show that with this approach many problems associated with the application of laser ablation for photolithography can be solved. The mechanism of ablation for these photopolymers is photochemical, whereas for most of the standard polymers this mechanism is photothermal. The photochemical decomposition mechanism results in high resolution ablation with no thermal damage at the edges of the etched structures. In addition there are no redeposited ablation products or surface modifications of the polymer after ablation.

Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

Science.gov (United States)

Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

2016-03-01

Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

Science.gov (United States)

Zakour, Sihem Ben; Taleb, Hassen

2017-09-01

Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

Modified diamond dies for laser applications

Energy Technology Data Exchange (ETDEWEB)

McWilliams, R.A.

1978-06-21

A modified wire drawing die for spatial filtering techniques is described. It was designed for use in high power laser systems. The diamond aperture is capable of enduring high intensity laser frequency without damaging the laser beam profile. The diamond is mounted at the beam focus in a vacuum of 1 x 10/sup -5/ Torr. The vacuum prevents plasma forming at the diamond aperture, thus enabling the beam to pass through without damaging the holder or aperture. The spatial filters are fitted with a manipulator that has three electronic stepping motors, can position the aperture in three orthogonal directions, and is capable of 3.2 ..mu..m resolution. Shiva laser system is using 105 diamond apertures for shaping the High Energy Laser Beam.

Three-Dimensional Glass Monolithic Micro-Flexure Fabricated by Femtosecond Laser Exposure and Chemical Etching

Directory of Open Access Journals (Sweden)

Viktor Tielen

2014-09-01

Full Text Available Flexures are components of micro-mechanisms efficiently replacing classical multi-part joints found at the macroscale. So far, flexures have been limited to two-dimensional planar designs due to the lack of a suitable three-dimensional micromanufacturing process. Here we demonstrate and characterize a high-strength transparent monolithic three-dimensional flexural component fabricated out of fused silica using non-ablative femtosecond laser processing combined with chemical etching. As an illustration of the potential use of this flexure, we propose a design of a Hoecken linkage entirely made with three-dimensional cross-spring pivot hinges.

Performance improvement inpolymer-based thin film transistor using modified bottom-contact structures with etched SiO{sub 2} layers

Energy Technology Data Exchange (ETDEWEB)

Park, Jeong Woo [R and D Center, Samsung Corning Precision Materials Co., Ltd, Asan (Korea, Republic of); You, Young Jun; Shim, Jae Won [Dept. of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul (Korea, Republic of)

2017-02-15

Polymer-based thin film transistors (TFTs) with a modified bottom-contact structure and etched SiO{sub 2} layer were developed and investigated. An increase in the field-effect mobility in the developed TFTs compared to TFTs with a normal bottom-contact structure was ascertained. A bottom-contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom-contact structure was attributed to direct contact of the Au electrode with the active polymer layer.

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

2016-08-01

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

Toward reliable morphology assessment of thermosets via physical etching: Vinyl ester resin as an example

Directory of Open Access Journals (Sweden)

J. Karger-Kocsis

2013-05-01

Full Text Available The morphology of peroxide-cured, styrene crosslinked, bisphenol A-based vinyl ester (VE resin was investigated by atomic force microscopy (AFM after ‘physical’ etching with different methods. Etching was achieved by laser ablation, atmospheric plasma treatment and argon ion bombardment. Parameters of the etching were varied to get AFM scans of high topography resolution. VE exhibited a nanoscaled nodular structure the formation of which was ascribed to complex intra- and intermolecular reactions during crosslinking. The microstructure resolved after all the above physical etching techniques was similar provided that optimized etching and suitable AFM scanning conditions were selected. Nevertheless, with respect to the ‘morphology visualization’ these methods follow the power ranking: argon bombardment > plasma treatment > laser ablation.

Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

International Nuclear Information System (INIS)

Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran; BongChul, Kang; HyunChul, Kim

2015-01-01

Highlights: • A new patterning method for ITO thin film is introduced. • Gold thin film is important in decrease spikes formed in ITO patterning process. • The laser pulse width occupies a significant effect the patterning surface quality. • Etching process is the effective method to remove the spikes at rims of pattern. • A considerable improvement over patterning quality is obtained by proposed method. - Abstract: In this paper, an indium–tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass–ITO–gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated

Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

Energy Technology Data Exchange (ETDEWEB)

Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran [High Safety Vehicle Core Technology Research Center, Department of Mechanical & Automotive Engineering, Inje University, Gimhae (Korea, Republic of); BongChul, Kang, E-mail: kbc@kumoh.ac.kr [Department of Inteligent Mechanical Engineering, Kumoh National Institute of Technology, Gumi (Korea, Republic of); HyunChul, Kim, E-mail: mechkhc@inje.ac.kr [High Safety Vehicle Core Technology Research Center, Department of Mechanical & Automotive Engineering, Inje University, Gimhae (Korea, Republic of)

2015-05-01

Highlights: • A new patterning method for ITO thin film is introduced. • Gold thin film is important in decrease spikes formed in ITO patterning process. • The laser pulse width occupies a significant effect the patterning surface quality. • Etching process is the effective method to remove the spikes at rims of pattern. • A considerable improvement over patterning quality is obtained by proposed method. - Abstract: In this paper, an indium–tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass–ITO–gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated.

Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10Hz laser-plasma radiation source based on a gas puff target

Czech Academy of Sciences Publication Activity Database

Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Juha, Libor; Kostecki, J.; Rakowski, R.; Szczurek, M.

2006-01-01

Roč. 82, - (2006), s. 529-532 ISSN 0946-2171 R&D Projects: GA MŠk(CZ) LC510 Grant - others:Ministery of Scientific Research(PL) 3 T08C 002 27 Institutional research plan: CEZ:AV0Z10100523 Keywords : photo-etching * organic polymers * laser-produced plasmas Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.023, year: 2006

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2016-01-18

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

Energy Technology Data Exchange (ETDEWEB)

Khuat, Vanthanh [Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi' an Jiaotong University, No. 28, Xianning West Road, Xi' an 710049 (China); Le Quy Don Technical University, No. 100, Hoang Quoc Viet Street, Hanoi 7EN-248 (Viet Nam); Chen, Tao; Gao, Bo; Si, Jinhai, E-mail: jinhaisi@mail.xjtu.edu.cn; Ma, Yuncan; Hou, Xun [Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Collaborative Innovation Center of Suzhou Nano Science and Technology, School of Electronics and Information Engineering, Xi' an Jiaotong University, No. 28, Xianning West Road, Xi' an 710049 (China)

2014-06-16

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

Effect of laser parameters on surface roughness of laser modified tool steel after thermal cyclic loading

Science.gov (United States)

Lau Sheng, Annie; Ismail, Izwan; Nur Aqida, Syarifah

2018-03-01

This study presents the effects of laser parameters on the surface roughness of laser modified tool steel after thermal cyclic loading. Pulse mode Nd:YAG laser was used to perform the laser surface modification process on AISI H13 tool steel samples. Samples were then treated with thermal cyclic loading experiments which involved alternate immersion in molten aluminium (800°C) and water (27°C) for 553 cycles. A full factorial design of experiment (DOE) was developed to perform the investigation. Factors for the DOE are the laser parameter namely overlap rate (η), pulse repetition frequency (f PRF) and peak power (Ppeak ) while the response is the surface roughness after thermal cyclic loading. Results indicate the surface roughness of the laser modified surface after thermal cyclic loading is significantly affected by laser parameter settings.

Simulation of the evolution of fused silica's surface defect during wet chemical etching

Science.gov (United States)

Liu, Taixiang; Yang, Ke; Li, Heyang; Yan, Lianghong; Yuan, Xiaodong; Yan, Hongwei

2017-08-01

Large high-power-laser facility is the basis for achieving inertial confinement fusion, one of whose missions is to make fusion energy usable in the near future. In the facility, fused silica optics plays an irreplaceable role to conduct extremely high-intensity laser to fusion capsule. But the surface defect of fused silica is a major obstacle limiting the output power of the large laser facility and likely resulting in the failure of ignition. To mitigate, or event to remove the surface defect, wet chemical etching has been developed as a practical way. However, how the surface defect evolves during wet chemical etching is still not clearly known so far. To address this problem, in this work, the three-dimensional model of surface defect is built and finite difference time domain (FDTD) method is developed to simulate the evolution of surface defect during etching. From the simulation, it is found that the surface defect will get smooth and result in the improvement of surface quality of fused silica after etching. Comparatively, surface defects (e.g. micro-crack, scratch, series of pinholes, etc.) of a typical fused silica at different etching time are experimentally measured. It can be seen that the simulation result agrees well with the result of experiment, indicating the FDTD method is valid for investigating the evolution of surface defect during etching. With the finding of FDTD simulation, one can optimize the treatment process of fused silica in practical etching or even to make the initial characterization of surface defect traceable.

Nano-structuring of PTFE surface by plasma treatment, etching, and sputtering with gold

International Nuclear Information System (INIS)

Reznickova, Alena; Kolska, Zdenka; Hnatowicz, Vladimir; Svorcik, Vaclav

2011-01-01

Properties of pristine, plasma modified, and etched (by water and methanol) polytetrafluoroethylene (PTFE) were studied. Gold nanolayers sputtered on this modified PTFE have been also investigated. Contact angle, measured by goniometry, was studied as a function of plasma exposure and post-exposure aging times. Degradation of polymer chains was examined by etching of plasma modified PTFE in water or methanol. The amount of ablated and etched layer was measured by gravimetry. In the next step the pristine, plasma modified, and etched PTFE was sputtered with gold. Changes in surface morphology were observed using atomic force microscopy. Chemical structure of modified polymers was characterized by X-ray photoelectron spectroscopy (XPS). Surface chemistry of the samples was investigated by electrokinetic analysis. Sheet resistance of the gold layers was measured by two-point technique. The contact angle of the plasma modified PTFE decreases with increasing exposure time. The PTFE amount, ablated by the plasma treatment, increases with the plasma exposure time. XPS measurements proved that during the plasma treatment the PTFE macromolecular chains are degraded and oxidized and new –C–O–C–, –C=O, and –O–C=O groups are created in modified surface layer. Surface of the plasma modified PTFE is weakly soluble in methanol and intensively soluble in water. Zeta potential and XPS shown dramatic changes in PTFE surface chemistry after the plasma exposure, water etching, and gold deposition. When continuous gold layer is formed a rapid decrease of the sheet resistance of the gold layer is observed.

Rapid prototyping of 2D glass microfluidic devices based on femtosecond laser assisted selective etching process

Science.gov (United States)

Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon

2018-02-01

Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.

Surface modification of Ti dental implants by Nd:YVO4 laser irradiation

International Nuclear Information System (INIS)

Braga, Francisco J.C.; Marques, Rodrigo F.C.; Filho, Edson de A.; Guastaldi, Antonio C.

2007-01-01

Surface modifications have been applied in endosteal bone devices in order to improve the osseointegration through direct contact between neoformed bone and the implant without an intervening soft tissue layer. Surface characteristics of titanium implants have been modified by addictive methods, such as metallic titanium, titanium oxide and hydroxyapatite powder plasma spray, as well as by subtractive methods, such as acid etching, acid etching associated with sandblasting by either AlO 2 or TiO 2 , and recently by laser ablation. Surface modification for dental and medical implants can be obtained by using laser irradiation technique where its parameters like repetition rate, pulse energy, scanning speed and fluency must be taken into accounting to the appropriate surface topography. Surfaces of commercially pure Ti (cpTi) were modified by laser Nd:YVO 4 in nine different parameters configurations, all under normal atmosphere. The samples were characterized by SEM and XRD refined by Rietveld method. The crystalline phases αTi, βTi, Ti 6 O, Ti 3 O and TiO were formed by the melting and fast cooling processes during irradiation. The resulting phases on the irradiated surface were correlated with the laser beam parameters. The aim of the present work was to control titanium oxides formations in order to improve implants osseointegration by using a laser irradiation technique which is of great importance to biomaterial devices due to being a clean and reproducible process

Bonding performance of universal adhesives to er,cr:YSGG laser-irradiated enamel.

Science.gov (United States)

Ayar, Muhammet Kerim; Erdemir, Fatih

2017-04-01

Universal adhesives have been recently introduced for use as self-etch or etch-and-rinse adhesives depending on the dental substrate and clinical condition. However, their bonding effectiveness to laser-irradiated enamel is still not well-known. Thus, the aim of this study was to compare the shear bond strength (SBS) of universal adhesives (Single Bond Universal; Nova Compo-B Plus) applied to Er,Cr:YSGG laser-irradiated enamel with SBS of the same adhesives applied in self-etch and acid-etching modes, respectively. Crown segments of sixty bovine incisors were embedded into standardized acrylic blocks. Flattened enamel surfaces were prepared. Specimens were divided into six groups according to universal adhesives and application modes randomly (n = 10), as follows: Single Bond Universal/acid-etching mode; Nova Compo-B Plus/acid-etching mode; Single Bond Universal/self-etching mode; Nova Compo-B Plus/self-etching mode; and Single Bond Universal/Er,Cr:YSGG Laser-etching mode; Nova Compo-B Plus/Er,Cr:YSGG Laser-etching mode. After surface treatments, universal adhesives were applied onto surfaces. SBS was determined after storage in water for 24 h using a universal testing machine with a crosshead speed of 0.5 mm min -1 . Failure modes were evaluated using a stereomicroscope. Data was analyzed using two-way of analyses of variances (ANOVA) (p = 0.05). Two-way ANOVA revealed that adhesive had no effect on SBS (p = 0.88), but application mode significantly influenced SBS (p = 0.00). Acid-etching significantly increased SBS, whereas there are no significant differences between self-etch mode and laser-etching for both adhesives. The bond strength of universal adhesives may depend on application mode. Acid etching may significantly increase bond strength, while laser etching may provide similar bond strength when compared to self-etch mode. © 2016 Wiley Periodicals, Inc.

Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

Science.gov (United States)

Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

2015-01-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

Ultra-short laser processing of transparent material at the interface to liquid

International Nuclear Information System (INIS)

Boehme, R; Pissadakis, S; Ehrhardt, M; Ruthe, D; Zimmer, K

2006-01-01

Similarly to laser-induced backside wet etching (LIBWE) with nanosecond ultraviolet (ns UV) laser pulses, the irradiation of the solid/liquid interface of fused silica with sub-picosecond (sub-ps) UV and femtosecond near infrared (fs NIR) laser pulses results in etching of the fused silica surface and deposition of decomposition products from liquid. Furthermore, the etch threshold is reduced compared with both direct ablation with an fs laser in air and backside etching with UV ns pulses. Using 0.5 M pyrene/toluene as absorbing liquid, the thresholds were determined to be 70 mJ cm -2 (sub-ps UV) and 330 mJ cm -2 (fs NIR). Furthermore, an almost linear increase in the etch rate with increasing laser fluence was found. The roughness of surfaces backside etched with ultra-short pulses is higher in comparison with ns pulses but lower than that obtained using direct fs laser ablation. Hence a combination of processes involved in fs laser ablation and ns backside etching can be expected. The processes at the ultra-short pulse laser irradiated solid/liquid interface are discussed, considering the effects of ultra-fast heating, multi-photon absorption processes, as well as defect generation in the materials

Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

Directory of Open Access Journals (Sweden)

Tiago S. Monteiro

2015-10-01

Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

Highly sensitive refractive index fiber inline Mach-Zehnder interferometer fabricated by femtosecond laser micromachining and chemical etching

Science.gov (United States)

Sun, Xiao-Yan; Chu, Dong-Kai; Dong, Xin-Ran; Zhou, Chu; Li, Hai-Tao; Luo-Zhi; Hu, You-Wang; Zhou, Jian-Ying; Cong-Wang; Duan, Ji-An

2016-03-01

A High sensitive refractive index (RI) sensor based on Mach-Zehnder interferometer (MZI) in a conventional single-mode optical fiber is proposed, which is fabricated by femtosecond laser transversal-scanning inscription method and chemical etching. A rectangular cavity structure is formed in part of fiber core and cladding interface. The MZI sensor shows excellent refractive index sensitivity and linearity, which exhibits an extremely high RI sensitivity of -17197 nm/RIU (refractive index unit) with the linearity of 0.9996 within the refractive index range of 1.3371-1.3407. The experimental results are consistent with theoretical analysis.

Metal-assisted etch combined with regularizing etch

Energy Technology Data Exchange (ETDEWEB)

Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

2018-03-06

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Effect of argon ion etching on the magnetic properties of FeCoB films

Energy Technology Data Exchange (ETDEWEB)

Zhu, Junwei; Zhou, Kan; Yang, Yi; Tang, Dongming; Zhang, Baoshan, E-mail: malab@nju.edu.cn; Lu, Mu; Lu, Huaixian

2015-01-15

In this paper, a new method to modify Ta underlayers by an argon ion etching technology is introduced. Surface roughness of Ta underlayers, as well as soft magnetic properties of post-deposited FeCoB films can be improved by applying a proper ion etching process. The reduction of magnetic coercivity of FeCoB films deposited on the modified Ta underlayers is attributed to the improvement of interfacial roughness, which can reduce magnetic ripples in magnetic films. The microwave damping linewidth of magnetic films is also found to be related to the interfacial roughness. Ta underlayers modified by the ion etching can reduce the influence of two-magnon scattering effect, and thus tune microwave properties of magnetic films. All the results prove that argon ion etching is an effective way to tailor magnetic properties of magnetic films. - Highlights: • We believe that our method to tune the magnetic film properties will be interesting for general readers of Journal of Magnetism and Magnetic Materials. • In the paper, argon ion etching is applied to the Ta underlayer before the FeCoB film is deposited on it. • The modified interface roughness has effectively improved the magnetic properties, including the static magnetic and microwave performance. • The method is valuable for other underlayer/magnetic film systems.

Two-dimensional network formation of cardiac myocytes in agar microculture chip with 1480 nm infrared laser photo-thermal etching.

Science.gov (United States)

Kojima, Kensuke; Moriguchi, Hiroyuki; Hattori, Akihiro; Kaneko, Tomoyuki; Yasuda, Kenji

2003-11-01

We have developed a new method that enables agar microstructures to be used to cultivate cells and that allows cell network patterns to be controlled. The method makes use of non-contact three-dimensional photo-thermal etching with a 1480 nm infrared focused laser beam, which is strongly absorbed by water and agar gel, to form the shapes of agar microstructures. It allows microstructures to be easily formed in an agar layer within a few minutes, with cell-culture holes formed by the spot heating of a 100 mW laser and tunnels by the tracing of a 100 microm s(-1), 40 mW laser. We cultivated rat cardiac myocytes in adjacent microstructures and observed synchronized beating in them 90 min after they had made physical contact. Our results indicate that the system can make and use microstructures for cell-network cultivation in a minimal amount of time without any expensive microfabrication facilities or complicated procedures.

Comparison Of Bond Strength Of Orthodontic Molar Tubes Using Different Enamel Etching Techniques And Their Effect On Enamel

International Nuclear Information System (INIS)

Abd el Rahman, H.Y.

2013-01-01

In fixed orthodontic treatment, brackets and tubes are used for transferring orthodontic forces to the teeth. Those attachments were welded to cemented bands. Fifty years ago, direct bonding of brackets and other attachments has become a common technique in fixed orthodontic treatment. Orthodontists used to band teeth, especially molars and second premolars, to avoid the need for re bonding accessories in these regions of heavy masticatory forces. However, it is a known fact that direct bonding saves chair time as it does not require prior band selection and fitting, has the ability to maintain good oral hygiene, improve esthetics and make easier attachment to crowded and partially erupted teeth. Moreover, when the banding procedure is not performed with utmost care it can damage periodontal and/or dental tissues. Molar tubes bonding decreases the chance of decalcification caused by leakage beneath the bands. Since molar teeth are subjected to higher masticatory impact, especially lower molars, it would be convenient to devise methods capable of increasing the efficiency of their traditional bonding. These methods may include variation in bond able molar tube material, design, bonding materials and etching techniques. For achieving successful bonding, the bonding agent must penetrate the enamel surface; have easy clinical use, dimensional stability and enough bond strength. Different etching techniques were introduced in literature to increase the bond strength which includes: conventional acid etching, sandblasting and laser etching techniques. The process of conventional acid etching technique was invented In (1955) as the surface of enamel has great potential for bonding by micromechanical retention, to form ‘the mechanical lock‘. The primary effect of enamel etching is to increase the surface area. However, this roughens the enamel microscopically and results in a greater surface area on which to bond. By dissolving minerals in enamel, etchants remove the

The effect of different surgical drilling procedures on full laser-etched microgrooves surface-treated implants: an experimental study in sheep.

Science.gov (United States)

Jimbo, Ryo; Tovar, Nick; Yoo, Daniel Y; Janal, Malvin N; Anchieta, Rodolfo B; Coelho, Paulo G

2014-09-01

To evaluate the influence of instrumentation technique on the early osseointegration histomorphometrics and biomechanical fixation of fully laser-etched microgrooves implant surfaces in a sheep model. Six sheep were subjected to bilateral hip surgeries 3 and 6 weeks before euthanasia. A total of 48 implants (∅4.5 mm, 8 mm in length) were distributed among four sites (8 per animal) and placed in bone sites drilled to 4.6 mm (reamer), 4.1 mm (loose), 3.7 mm (medium) and 3.2 mm (tight) in diameter. After healing, the animals were euthanized and half of the implants were biomechanically tested, while the remainder was subjected to non-decalcified histologic processing. The histomorphometric parameters assessed were bone-to-implant contact (BIC) and bone area fraction occupancy (BAFO). Statistical analysis was performed using a mixed-model analysis of variance with significance level set at P bone seemed to be in contact to the implant surface, at 3 weeks, whereas the implants placed in press-fit situations were mainly supported by cortical bone. The laser-etched microgrooved implant presented osteoconductive and biocompatible properties for all surgical procedures tested. However, procedures providing increasingly higher press-fit scenarios presented the strongest histomorphometric and biomechanical responses at 3 and 6 weeks. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Understanding and controlling the step bunching instability in aqueous silicon etching

Science.gov (United States)

Bao, Hailing

Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110

The effect of Er:YAG laser irradiation on the bond stability of self-etch adhesives at different dentin depths.

Science.gov (United States)

Karadas, Muhammet; Çağlar, İpek

2017-07-01

The aim of this study was to evaluate the effect of Er:YAG laser irradiation on the micro-shear bond strength of self-etch adhesives to the superficial dentin and the deep dentin before and after thermocycling. Superficial dentin and deep dentin surfaces were prepared by flattening of the occlusal surfaces of extracted human third molars. The deep or superficial dentin specimens were randomized into three groups according to the following surface treatments: group I (control group), group II (Er:YAG laser; 1.2 W), and group III (Er:YAG laser; 0.5 W). Clearfil SE Bond or Clearfil S 3 Bond was applied to each group's dentin surfaces. After construction of the composite blocks on the dentin surface, the micro-shear bond testing of each adhesive was performed at 24 h or after 15,000 thermal cycles. The data were analyzed using a univariate analysis of variance and Tukey's test (p  0.05). However, deep-dentin specimens irradiated with laser showed significantly higher bond strengths than did control specimens after thermocycling (p adhesives may be altered by the dentin depth. Regardless of the applied surface treatment, deep dentin showed significant bond degradation.

An investigation of phase transformation and crystallinity in laser surface modified H13 steel

Science.gov (United States)

Aqida, S. N.; Brabazon, D.; Naher, S.

2013-03-01

This paper presents a laser surface modification process of AISI H13 tool steel using 0.09, 0.2 and 0.4 mm size of laser spot with an aim to increase hardness properties. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 tool steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, overlap percentage and pulse repetition frequency (PRF). X-ray diffraction analysis (XRD) was conducted to measure crystallinity of the laser-modified surface. X-ray diffraction patterns of the samples were recorded using a Bruker D8 XRD system with Cu K α ( λ=1.5405 Å) radiation. The diffraction patterns were recorded in the 2 θ range of 20 to 80°. The hardness properties were tested at 981 mN force. The laser-modified surface exhibited reduced crystallinity compared to the un-processed samples. The presence of martensitic phase was detected in the samples processed using 0.4 mm spot size. Though there was reduced crystallinity, a high hardness was measured in the laser-modified surface. Hardness was increased more than 2.5 times compared to the as-received samples. These findings reveal the phase source of the hardening mechanism and grain composition in the laser-modified surface.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

Science.gov (United States)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Fabrication of micromechanical structures on substrates selectively etched using a micropatterned ion-implantation method

International Nuclear Information System (INIS)

Nakano, Shizuka; Nakagawa, Sachiko; Ishikawa, Haruo; Ogiso, Hisato

2001-01-01

An advanced micromachining technique using ion implantation to modify materials was studied. Gold ion implantation into silicon decreased the etching rate when the silicon was etched in potassium hydroxide solution after the ion implantation; the implanted region remained, thus forming the microstructure. Observation of the cross-section of the resulting etched structure by transmission electron microscopy showed that the structure was made only from the ion-implanted region, and that gold was precipitated on the surface. To clarify the mechanism involved in the decrease in the etching rate, we varied the etching conditions. Our results show that precipitation of implanted gold on the surface decreased the etching rate, because solubility of gold is lower

Selective Laser Sintering And Melting Of Pristine Titanium And Titanium Ti6Al4V Alloy Powders And Selection Of Chemical Environment For Etching Of Such Materials

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Dobrzański L.A.

2015-09-01

Full Text Available The aim of the investigations described in this article is to present a selective laser sintering and melting technology to fabricate metallic scaffolds made of pristine titanium and titanium Ti6Al4V alloy powders. Titanium scaffolds with different properties and structure were manufactured with this technique using appropriate conditions, notably laser power and laser beam size. The purpose of such elements is to replace the missing pieces of bones, mainly cranial and facial bones in the implantation treatment process. All the samples for the investigations were designed in CAD/CAM (3D MARCARM ENGINEERING AutoFab (Software for Manufacturing Applications software suitably integrated with an SLS/SLM system. Cube-shaped test samples dimensioned 10×10×10 mm were designed for the investigations using a hexagon-shaped base cell. The so designed 3D models were transferred to the machine software and the actual rapid manufacturing process was commenced. The samples produced according to the laser sintering technology were subjected to chemical processing consisting of etching the scaffolds’ surface in different chemical mediums. Etching was carried out to remove the loosely bound powder from the surface of scaffolds, which might detach from their surface during implantation treatment and travel elsewhere in an organism. The scaffolds created were subjected to micro- and spectroscopic examinations

LASER-INDUCED BIOACTIVITY IN DENTAL PORCELAIN MODIFIED BY BIOACTIVE GLASS

Directory of Open Access Journals (Sweden)

ANASTASIA BEKETOVA

2012-12-01

Full Text Available The aim of this study was to investigate the impact of laser-liquid-solid interaction method in the bioactivity of dental porcelain modified by bioactive glass. Forty sol-gel derived specimens were immersed in Dulbecco's Modified Eagle's Medium, 31 and 9 specimens of which were treated with Er:YAG and Nd:YAG laser respectively. Untreated specimens served as controls. Incubation of specimens followed. Bioactivity was evaluated, using Fourier Transform Infrared spectroscopy (FTIR, Scanning Electron Microscopy (SEM/Energy Dispersive Spectroscopy (EDS and Transmission Electron Microscopy (TEM. FTIR detected peaks associated with hydroxyapatite on 1 Nd:YAG- and 4 Er:YAG-treated specimens. SEM analysis revealed that Er:YAG-treated specimens were covered by granular hydroxyapatite layer, while Nd:YAG treated specimen presented growth of flake-like hydroxyapatite. TEM confirmed the results. The untreated controls presented delayed bioactivity. In conclusion, Nd:YAG and Er:YAG laser treatment of the material, under certain fluencies, accelerates hydroxyapatite formation. Nd:YAG laser treatment of specific parameters causes the precipitation of flake-like hydroxyapatite in nano-scale.

3D features of modified photostructurable glass-ceramic with infrared femtosecond laser pulses

Energy Technology Data Exchange (ETDEWEB)

Fernandez-Pradas, J.M., E-mail: jmfernandez@ub.edu [Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Marti i Franques 1, E-08028 Barcelona (Spain); Serrano, D.; Bosch, S.; Morenza, J.L.; Serra, P. [Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Marti i Franques 1, E-08028 Barcelona (Spain)

2011-04-01

The exclusive ability of laser radiation to be focused inside transparent materials makes lasers a unique tool to process inner parts of them unreachable with other techniques. Hence, laser direct-write can be used to create 3D structures inside bulk materials. Infrared femtosecond lasers are especially indicated for this purpose because a multiphoton process is usually required for absorption and high resolution can be attained. This work studies the modifications produced by 450 fs laser pulses at 1027 nm wavelength focused inside a photostructurable glass-ceramic (Foturan) at different depths. Irradiated samples were submitted to standard thermal treatment and subsequent soaking in HF solution to form the buried microchannels and thus unveil the modified material. The voxel dimensions of modified material depend on the laser pulse energy and the depth at which the laser is focused. Spherical aberration and self-focusing phenomena are required to explain the observed results.

Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

Science.gov (United States)

Ozer, Fusun; Blatz, Markus B

2013-01-01

Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

Etch bias inversion during EUV mask ARC etch

Science.gov (United States)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Laser assisted fabrication of random rough surfaces for optoelectronics

Energy Technology Data Exchange (ETDEWEB)

Brissonneau, V., E-mail: vincent.brissonneau@im2np.fr [Thales Optronique SA, Avenue Gay-Lussac, 78995 Elancourt (France); Institut Materiaux Microelectronique Nanosciences de Provence, Aix Marseille Universite, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Escoubas, L. [Institut Materiaux Microelectronique Nanosciences de Provence, Aix Marseille Universite, Avenue Escadrille Normandie Niemen, 13397 Marseille (France); Flory, F. [Institut Materiaux Microelectronique Nanosciences de Provence, Ecole Centrale Marseille, Marseille (France); Berginc, G. [Thales Optronique SA, Avenue Gay-Lussac, 78995 Elancourt (France); Maire, G.; Giovannini, H. [Institut Fresnel, Aix Marseille Universite, Avenue Escadrille Normandie Niemen, 13397 Marseille (France)

2012-09-15

Highlights: Black-Right-Pointing-Pointer Random rough surfaces are photofabricated using an argon ion laser. Black-Right-Pointing-Pointer Speckle and surface correlation function are linked. Black-Right-Pointing-Pointer Exposure beam is modified allowing tuning the correlation. Black-Right-Pointing-Pointer Theoretical examples are presented. Black-Right-Pointing-Pointer Experimental results are compared with theoretical expectation. - Abstract: Optical surface structuring shows great interest for antireflective or scattering properties. Generally, fabricated surface structures are periodical but random surfaces that offer new degrees of freedom and possibilities by the control of their statistical properties. We propose an experimental method to create random rough surfaces on silicon by laser processing followed by etching. A photoresist is spin coated onto a silicon substrate and then exposed to the scattering of a modified laser beam. The beam modification is performed by using a micromirror matrix allowing laser beam shaping. An example of tuning is presented. An image composed of two white circles with a black background is displayed and the theoretical shape of the correlation is calculated. Experimental surfaces are elaborated and the correlation function calculated from height mapping. We finally compared the experimental and theoretical correlation functions.

Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

International Nuclear Information System (INIS)

Azooz, A.A.; Al-Jubbori, M.A.

2013-01-01

Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Science.gov (United States)

Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

2017-02-01

Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

Etching of semiconductors and metals by the photonic jet with shaped optical fiber tips

Science.gov (United States)

Pierron, Robin; Lecler, Sylvain; Zelgowski, Julien; Pfeiffer, Pierre; Mermet, Frédéric; Fontaine, Joël

2017-10-01

The etching of semiconductors and metals by a photonic jet (PJ) generated with a shaped optical fiber tip is studied. Etched marks with a diameter of 1 μm have been realized on silicon, stainless steel and titanium with a 35 kHz pulsed laser, emitting 100 ns pulses at 1064 nm. The selection criteria of the fiber and its tip are discussed. We show that a 100/140 silica fiber is a good compromise which takes into account the injection, the working distance and the energy coupled in the higher-order modes. The energy balance is performed on the basis of the known ablation threshold of the material. Finally, the dependence between the etching depth and the number of pulses is studied. Saturation is observed probably due to a redeposition of the etched material, showing that a higher pulse energy is required for deeper etchings.

Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

Science.gov (United States)

Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

2016-04-10

HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

Periodic morphological modification developed on the surface of polyethersulfone by XeCl excimer laser photoablation

International Nuclear Information System (INIS)

Niino, H.; Nakano, M.; Nagano, S.; Yabe, A.; Miki, T.; Center for Structure Analyses, Teijin Limited, Asahigaoka, Hino, Tokyo, 191 Japan)

1989-01-01

Periodic and stable micropatterns appeared on the surface of amorphous polyethersulfone etched with an excimer laser at 308 nm in ambient air and a vacuum. The control of such radiative conditions as fluence and incident angle enables us to modify the spacing and pattern of the microstructures. A topographical investigation with scanning electron microscopy and an experiment with x-ray photoelectron spectroscopy to determine its composition is reported

Photophysical and photochemical effects in ultrafast laser patterning of CVD graphene

International Nuclear Information System (INIS)

Bobrinetskiy, Ivan; Otero, Nerea; Romero, Pablo M; Emelianov, Aleksei; Komarov, Ivan; Nasibulin, Albert

2016-01-01

The micro-scale patterns in graphene on Si/SiO 2 substrate were fabricated using ultrashort 515 nm laser pulses. For both picosecond and femtosecond laser pulses two competitive processes, based on photo-thermal (ablation) and photochemical (oxidation/etching) effects, were observed. The laser-induced etching of graphene starts just below the threshold energy of graphene ablation: 1.7 nJ per 280 fs pulse and 2.7 µ J per 30 ps pulse. Whilst etching is not sensitive to thermal properties of graphene and provides uniform patterns, the ablation, in contrast, is highly affected by defects in the graphene structure like wrinkles and bilayer islands. The mechanisms of ultrafast laser interaction with graphene are discussed. (letter)

Effect of bracket bonding with Er: YAG laser on nanomechanical properties of enamel.

Science.gov (United States)

Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh; Banimostafaee, Hamed

2014-01-01

The aim of this study was to compare the effects of conventional acid etching and laser etching on the nano-mechanical properties of the dental enamel using nano-indentation test. In this experimental in vitro study, buccal surfaces of 10 premolars were divided into three regions. One of the regions was etched with 37% phosphoric acid and another etched with Er:YAG laser, the third region was not etched. The brackets were bonded to both of etched regions. After thermocycling for 500 cycles, the brackets were removed and the teeth were decoronated from the bracket bonding area. Seven nano-indentations were applied at 1-31 μm depth from the enamel surface in each region. Mean values of the hardness and elastic modulus were analyzed with repeated measures analysis of variance and Tukey HSD tests, using the SPSS software (SPSS Inc., version16.0, Chicago, Il, USA). P < 0.05 was considered as significant. The hardness up to 21 μm in depth and elastic modulus up to 6 μm in depth from the enamel surface for laser-etched enamel had significantly higher values than control enamel and the hardness up to 11 μm in depth and elastic modulus up to 6 μm in depth for acid-etched enamel had significantly lower values than the control enamel. The mechanical properties of the enamel were decreased after bracket bonding with conventional acid etching and increased after bonding with Er:YAG laser.

Enhancement of light absorption by blood to Nd:YAG laser using PEG-modified gold nanorods.

Science.gov (United States)

Xing, Linzhuang; Li, Dong; Chen, Bin; Dai, Yuze; Wu, Wenjuan; Wang, Guoxiang

2016-10-01

On the basis of the principle of selective photothermolysis, laser therapy has been the most effective treatment strategy for Port-wine stains (PWSs) caused by the expansion of dermal capillaries. Neodymium:Yttrium Aluminum Garnet (Nd:YAG) laser at 1064 nm wavelength has great potential for deeply buried PWS, although its application is limited because of its weak absorption by blood. The purpose of this study is to investigate the effect of PEG-modified gold nanorods (NRs) on the blood absorption enhancement for Nd:YAG laser. PEG-modified gold nanorods (NRs) were synthesized via the seeded growth method. Then, the effect of PEG-modified gold NRs on blood light absorbance was investigated through adding different concentration of PEG-modified gold NRs to 1 ml of blood at room temperature. Finally, the optical properties of whole mice blood with or without PEG-modified gold NRs under slow heating were investigated. The average length and width of PEG-modified gold NRs are 79.5 ± 10.5 and 13.5 ± 0.9 nm, respectively, with the aspect ratio of 5.89, and a strong absorption peak exists at ∼1050 nm in the near-infrared range. A linear correlation between the blood absorbance at 1064 nm and the amount of PEG-modified gold NRs was obtained. The absorbance at 1064 nm increased 17.6, 33.0, 48.3, and 65.4 times when 0.4, 0.8, 1.2, and 1.6 mg of PEG-modified gold NRs was added to 1 ml of blood at room temperature, respectively. After adding 0.8 mg of PEG-modified gold NRs to 1 ml of blood, blood absorbance at 1064 nm at different temperatures increased by an average of 24.0 times. After intravenously injecting PEG-modified gold NRs (0.87 mg/ml) into Sprague-Dawley mice, the blood absorbance at 1064 nm increased from 0.014 to 0.5. Our findings suggest that PEG-modified gold NRs injection is an efficient way to enhance light absorption by blood to Nd:YAG laser. Lasers Surg. Med. 48:790-803, 2016. © 2016 Wiley Periodicals, Inc. © 2016 Wiley

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

Directory of Open Access Journals (Sweden)

Iatsunskyi I. R.

2013-12-01

Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching

International Nuclear Information System (INIS)

Chekurov, N; Grigoras, K; Franssila, S; Tittonen, I; Peltonen, A

2009-01-01

We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped and undoped material is at least 1000:1, greatly decreasing the mask erosion problems. The resolution of the combined FIB-DRIE process is 20 lines μm -1 with the smallest masked feature size of 40 nm. The maximum achieved aspect ratio is 15:1 (e.g. 600 nm high pillars 40 nm in diameter).

Fabrication of 3D electro-thermal micro actuators in silica glass by femtosecond laser wet etch and microsolidics

Science.gov (United States)

Li, Qichao; Shan, Chao; Yang, Qing; Chen, Feng; Bian, Hao; Hou, Xun

2017-02-01

This paper demonstrates a novel electro-thermal micro actuator's design, fabrication and device tests which combine microfluidic technology and microsolidics process. A three-dimensional solenoid microchannel with high aspect ratio is fabricated inside the silica glass by an improved femtosecond laser wet etch (FLWE) technology, and the diameter of the spiral coil is only 200 μm. Molten alloy (Bi/In/Sn/Pb) with high melting point is injected into the three-dimensional solenoid microchannel inside the silica glass , then it solidifys and forms an electro-thermal micro actuator. The device is capable of achieving precise temperature control and quick response, and can also be easily integrated into MEMS, sensors and `lab on a chip' (LOC) platform inside the fused silica substrate.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

Science.gov (United States)

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.

1992-01-01

This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Etched beam splitters in InP/InGaAsP.

Science.gov (United States)

Norberg, Erik J; Parker, John S; Nicholes, Steven C; Kim, Byungchae; Krishnamachari, Uppiliappan; Coldren, Larry A

2011-01-17

An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 μm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated EBS couplers demonstrate insertion loss between 1 and 2.6 dB with transmission (cross-coupling) ≤ 10%. The results show excellent agreement with 3D finite-difference time-domain (FDTD) modeling. The coupling of EBS has weak wavelength dependence in the C-band, making it suitable for wavelength division multiplexing (WDM) or other wide bandwidth applications. Finally, the EBS is integrated with active semiconductor optical amplifier (SOA) and phase-modulator components; using a flattened ring resonator structure, a channelizing filter tunable in both amplitude and center frequency is demonstrated, as well as an EBS coupled ring laser.

Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

International Nuclear Information System (INIS)

Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

2009-01-01

This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Directory of Open Access Journals (Sweden)

Kun-Dar Li

2018-02-01

Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Science.gov (United States)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

A report of laser-assisted modified Widman flap for periodontal regeneration: Clinical and radiographic evaluation

Directory of Open Access Journals (Sweden)

Sanjeev Kumar Salaria

2010-01-01

Full Text Available Periodontitis is a relatively common disease. Various therapies have been recommended for its treatment which includes nonsurgical, antimicrobial, and surgical therapy. In recent years lasers have been used for all the three above-mentioned purposes. Lasers have been applied for hard and soft tissue debridement, contouring as well as the bacterial load reduction in the pocket. Here we present a case report of chronic periodontitis treated with the help of a new technique, laser-assisted modified Widman flap (LAMWF. The surgical procedure followed with a 980 nm diode laser has been described. The present case report resulted in significant pocket depth reduction, attachment gain, and radiographic evidence of bone fill. The laser-assisted modified Widman flap provided excellent results without complications and high patient as well as clinician satisfaction.

Silicon structuring by etching with liquid chlorine and fluorine precursors using femtosecond laser pulses

International Nuclear Information System (INIS)

Radu, C.; Simion, S.; Zamfirescu, M.; Ulmeanu, M.; Enculescu, M.; Radoiu, M.

2011-01-01

The aim of this study is to investigate the micrometer and submicrometer scale structuring of silicon by liquid chlorine and fluorine precursors with 200 fs laser pulses working at both fundamental (775 nm) and frequency doubled (387 nm) wavelengths. The silicon surface was irradiated at normal incidence by immersing the Si (111) substrates in a glass container filled with liquid chlorine (CCl 4 ) and fluorine (C 2 Cl 3 F 3 ) precursors. We report that silicon surfaces develop an array of spikes with single step irradiation processes at 775 nm and equally at 387 nm. When irradiating the Si surface with 400 pulses at 330 mJ/cm 2 laser fluence and a 775 nm wavelength, the average height of the formed Si spikes in the case of fluorine precursors is 4.2 μm, with a full width at half maximum of 890 nm. At the same irradiation wavelength chlorine precursors develop Si spikes 4 μm in height and with a full width at half maximum of 2.3 μm with irradiation of 700 pulses at 560 mJ/cm 2 laser fluence. Well ordered areas of submicrometer spikes with an average height of about 500 nm and a width of 300 nm have been created by irradiation at 387 nm by chlorine precursors, whereas the fluorine precursors fabricate spikes with an average height of 700 nm and a width of about 200 nm. Atomic force microscopy and scanning electron microscopy of the surface show that the formation of the micrometer and sub-micrometer spikes involves a combination of capillary waves on the molten silicon surface and laser-induced etching of silicon, at both 775 nm and 387 nm wavelength irradiation. The energy-dispersive x-ray measurements indicate the presence of chlorine and fluorine precursors on the structured surface. The fluorine precursors create a more ordered area of Si spikes at both micrometer and sub-micrometer scales. The potential use of patterned Si substrates with gradient topography as model scaffolds for the systematic exploration of the role of 3D micro/nano morphology on cell

Effect of Nd:YAG laser on the solvent evaporation of adhesive systems.

Science.gov (United States)

Batista, Graziela Ribeiro; Barcellos, Daphne Câmara; Rocha Gomes Torres, Carlos; Damião, Álvaro José; de Oliveira, Hueder Paulo Moisés; de Paiva Gonçalves, Sérgio Eduardo

2015-01-01

This study evaluated the influence of Nd:YAG laser on the evaporation degree (ED) of the solvent components in total-etch and self-etch adhesives. The ED of Gluma Comfort Bond (Heraeus-Kulzer) one-step self-etch adhesive, and Adper Single Bond 2 (3M ESPE), and XP Bond (Dentsply) total-etch adhesives was determined by weight alterations using two techniques: Control--spontaneous evaporation of the solvent for 5 min; Experimental--Nd:YAG laser irradiation for 1 min, followed by spontaneous evaporation for 4 min. The weight loss due to evaporation of the volatile components was measured at baseline and after 10 s, 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s, 100 s, 110 s, 2 min, 3 min, 4 min, and 5 min. Evaporation of solvent components significantly increased with Nd:YAG laser irradiation for all adhesives investigated. Gluma Comfort Bond showed significantly higher evaporation of solvent components than Adper Single Bond 2 and XP Bond. All the adhesives lost weight quickly during the first min of Nd:YAG laser irradiation. The application of Nd:YAG laser on adhesives before light curing had a significant effect on the evaporation of the solvent components, and the ED of Gluma Comfort Bond one-step self-etch adhesive was significantly higher than with Adper Single Bond 2 and XP Bond total-etch adhesives. The use of the Nd:YAG laser on the uncured adhesive technique can promote a greater ED of solvents, optimizing the longevity of the adhesive restorations.

Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

Indian Academy of Sciences (India)

Administrator

sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. ... shows creation of shallow optical depth as visible from .... tron is lifted from valence band to deep inside the con-.

Effect of bracket bonding with Er: YAG laser on nanomechanical properties of enamel

Directory of Open Access Journals (Sweden)

Shiva Alavi

2014-01-01

Full Text Available Background: The aim of this study was to compare the effects of conventional acid etching and laser etching on the nano-mechanical properties of the dental enamel using nano-indentation test. Materials and Methods: In this experimental in vitro study, buccal surfaces of 10 premolars were divided into three regions. One of the regions was etched with 37% phosphoric acid and another etched with Er:YAG laser, the third region was not etched. The brackets were bonded to both of etched regions. After thermocycling for 500 cycles, the brackets were removed and the teeth were decoronated from the bracket bonding area. Seven nano-indentations were applied at 1-31 μm depth from the enamel surface in each region. Mean values of the hardness and elastic modulus were analyzed with repeated measures analysis of variance and Tukey HSD tests, using the SPSS software (SPSS Inc., version16.0, Chicago, Il, USA. P < 0.05 was considered as significant. Results: The hardness up to 21 μm in depth and elastic modulus up to 6 μm in depth from the enamel surface for laser-etched enamel had significantly higher values than control enamel and the hardness up to 11 μm in depth and elastic modulus up to 6 μm in depth for acid-etched enamel had significantly lower values than the control enamel. Conclusion: The mechanical properties of the enamel were decreased after bracket bonding with conventional acid etching and increased after bonding with Er:YAG laser.

Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

1987-01-01

When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

Self-etching adhesive on intact enamel, with and without pre-etching.

Science.gov (United States)

Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

2012-05-01

Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

Interface bonding of NiCrAlY coating on laser modified H13 tool steel surface

Science.gov (United States)

Reza, M. S.; Aqida, S. N.; Ismail, I.

2016-06-01

Bonding strength of thermal spray coatings depends on the interfacial adhesion between bond coat and substrate material. In this paper, NiCrAlY (Ni-164/211 Ni22 %Cr10 %Al1.0 %Y) coatings were developed on laser modified H13 tool steel surface using atmospheric plasma spray (APS). Different laser peak power, P p, and duty cycle, DC, were investigated in order to improve the mechanical properties of H13 tool steel surface. The APS spraying parameters setting for coatings were set constant. The coating microstructure near the interface was analyzed using IM7000 inverted optical microscope. Interface bonding of NiCrAlY was investigated by interfacial indentation test (IIT) method using MMT-X7 Matsuzawa Hardness Tester Machine with Vickers indenter. Diffusion of atoms along NiCrAlY coating, laser modified and substrate layers was investigated by energy-dispersive X-ray spectroscopy (EDXS) using Hitachi Tabletop Microscope TM3030 Plus. Based on IIT method results, average interfacial toughness, K avg, for reference sample was 2.15 MPa m1/2 compared to sample L1 range of K avg from 6.02 to 6.96 MPa m1/2 and sample L2 range of K avg from 2.47 to 3.46 MPa m1/2. Hence, according to K avg, sample L1 has the highest interface bonding and is being laser modified at lower laser peak power, P p, and higher duty cycle, DC, prior to coating. The EDXS analysis indicated the presence of Fe in the NiCrAlY coating layer and increased Ni and Cr composition in the laser modified layer. Atomic diffusion occurred in both coating and laser modified layers involved in Fe, Ni and Cr elements. These findings introduce enhancement of coating system by substrate surface modification to allow atomic diffusion.

Dry etching technology for semiconductors

CERN Document Server

Nojiri, Kazuo

2015-01-01

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

Silicon nanostructures produced by laser direct etching

DEFF Research Database (Denmark)

Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

1995-01-01

A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

Science.gov (United States)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Deeply-etched DBR mirrors for photonic integrated circuits and tunable lasers

NARCIS (Netherlands)

Docter, B.

2009-01-01

Deeply-etched Distributed Bragg Reflector (DBR) mirrors are a new versatile building block for Photonic Integrated Circuits that allows us to create more complex circuits for optical telecommunication applications. The DBR mirrors increase the device design flexibility because the mirrors can be

Structural modification of silica glass by laser scanning

International Nuclear Information System (INIS)

Zhao Jian; Sullivan, James; Zayac, John; Bennett, Ted D.

2004-01-01

The thermophysical nature of rapid CO 2 laser heating of silica glass is explored using a numerical simulation that considers the structural state of the glass, as characterized by the fictive temperature. The fictive temperature reflects the thermodynamic temperature at which the glass structure would be in equilibrium. To demonstrate that the thermophysical model can accurately predict the structural change in the glass, the fictive temperature is measured experimentally utilizing the fact that the fictive temperature change corresponds to a change of glass properties that can be revealed through wet chemical etching. The relationship between the etch rate and the fictive temperature is determined by preparing and etching samples of known fictive temperature. Wet chemical etching is used to measure the fictive temperature over the entire laser affected zone and the results are found to compare favorably with the results of the thermophysical model. The model and experimental measurements demonstrate that rapid laser processing results in an increased fictive temperature near the surface of the glass. The fictive temperature increase is about 1000 K and is uniform to within 5% over the laser affected zone. Near the boundary of this zone, the fictive temperature transitions abruptly to the value of the surrounding untreated glass

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

Science.gov (United States)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon.

Science.gov (United States)

Tokel, Onur; Turnali, Ahmet; Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F Ömer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e. , " in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Discrete mode lasers for communications applications

Science.gov (United States)

Barry, L. P.; Herbert, C.; Jones, D.; Kaszubowska-Anandarajah, A.; Kelly, B.; O'Carroll, J.; Phelan, R.; Anandarajah, P.; Shi, K.; O'Gorman, J.

2009-02-01

The wavelength spectra of ridge waveguide Fabry Perot lasers can be modified by perturbing the effective refractive index of the guided mode along very small sections of the laser cavity. One way of locally perturbing the effective index of the lasing mode is by etching features into the ridge waveguide such that each feature has a small overlap with the transverse field profile of the unperturbed mode, consequently most of the light in the laser cavity is unaffected by these perturbations. A proportion of the propagating light is however reflected at the boundaries between the perturbed and the unperturbed sections. Suitable positioning of these interfaces allows the mirror loss spectrum of a Fabry Perot laser to be manipulated. In order to achieve single longitudinal mode emission, the mirror loss of a specified mode must be reduced below that of the other cavity modes. Here we review the latest results obtained from devices containing such features. These results clearly demonstrate that these devices exceed the specifications required for a number of FTTH and Datacomms applications, such as GEPON, LX4 and CWDM. As well as this we will also present initial results on the linewidth of these devices.

Three-Dimensional Optical Trapping for Cell Isolation Using Tapered Fiber Probe by Dynamic Chemical Etching

International Nuclear Information System (INIS)

Taguchi, K; Okada, J; Nomura, Y; Tamura, K

2012-01-01

In this paper, chemically etched fiber probe was proposed for laser trapping and manipulation of cells. We fabricated tapered fiber probe by dynamic chemical etching technique. Three-Dimensional optical trap of a yeast cell dispersed in water solution could be formed by the fiber tip with 17deg tip. Optical forces were sufficient to move the yeast cell for trapping and manipulation. From these experimental results, it was found that our proposed tapered fiber tip was a promising tool for cell isolation.

Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

International Nuclear Information System (INIS)

Xu, Cigang; Deng, Ligang; Holder, Adam; Bailey, Louise R.; Proudfoot, Gary; Thomas, Owain; Gunn, Robert; Cooke, Mike; Leendertz, Caspar; Bergmann, Joachim

2015-01-01

Au nanoparticles and polystyrene nanospheres were used as mask for plasma etching of indium tin oxide (ITO) layer. By reactive ion etching (RIE) processes, the morphology of polystyrene nanospheres can be tuned through chemical or physical etching, and Au nanoparticle mask can result in ITO nanostructures with larger aspect ratio than nanosphere mask. During inductively coupled plasma (ICP) processes, Au nanoparticle mask was not affected by the thermal effect of plasma, whereas temperature of the substrate was essential to protect nanospheres from the damaging effect of plasma. Physical bombardment in the plasma can also modify the nanospheres. It was observed that under the same process conditions, the ratio of CH 4 and H 2 in the process gas can affect the etching rate of ITO without completely etching the nanospheres. The morphology of ITO nanostructures also depends on process conditions. The resulting ITO nanostructures show lower reflection in a spectral range of 400-1000 nm than c-Si and conventional antireflection layer of SiN x film. ITO nanostructures obtained after etching (scale bar = 200 nm). (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-04-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

Evaluation of erbium:YAG and holmium:YAG laser radiation and dental hard tissue

Science.gov (United States)

Attrill, David Cameron

and evidence of molten enamel in particular were apparent when the Er:YAG laser was used without water. The Cr-Tm-Ho;YAG laser produced extensive charring and carbonisation of tissues. It was concluded that this laser was unsuitable for clinical applications directed at the removal or modification of enamel and dentine, particularly as the Er:YAG laser offers superior qualities. Further research with the Cr-Tm-Ho:YAG laser was discontinued. A comparison of the mean shear bond strengths of a composite (ZlOO, 3M Dental Products) bonded to enamel was made using either a conventional acid etch technique or one of a range of experimental Er:YAG laser etching configurations. The mean values for acid etching (16.6 MPa) were in all cases significantly greater (pcracking was noted in most laser etched surfaces, but the extent of this was minimised when the laser was applied in conjunction with a surface water film. Pulpal temperature increments following Er:YAG laser irradiation were significantly lower in teeth prepared with water than without (paired t-test, p<0.01). The largest increment in samples prepared with water was 3.9°C, compared to 24.7°C without water. The principal determinant of the temperature increment in either group was the total delivered energy, up to 140J. Linear regression modelling predicts that continuous irradiation up to 160J with water would not result in iatrogenic pulpal damage. In conclusion, the Er:YAG laser was shown to be an effective tool for cutting and modifying dental hard tissues. It almost certainly offers the best combination of safety, efficiency and speed of any laser system designed for preparing cavities. The laser must be used in conjunction with a water coolant on the tissues to minimise the possibility of iatrogenic damage, improve the quality of the laser cuts and in some circumstances increase cutting efficiency. The Er:YAG laser has shown much promise in these in vitro experiments and its progression to clinical use is

Plasma surface modification of polypropylene track-etched membrane to improve its performance properties

Science.gov (United States)

Kravets, L. I.; Elinson, V. M.; Ibragimov, R. G.; Mitu, B.; Dinescu, G.

2018-02-01

The surface and electrochemical properties of polypropylene track-etched membrane treated by plasma of nitrogen, air and oxygen are studied. The effect of the plasma-forming gas composition on the surface morphology is considered. It has been found that the micro-relief of the membrane surface formed under the gas-discharge etching, changes. Moreover, the effect of the non-polymerizing gas plasma leads to formation of oxygen-containing functional groups, mostly carbonyl and carboxyl. It is shown that due to the formation of polar groups on the surface and its higher roughness, the wettability of the plasma-modified membranes improves. In addition, the presence of polar groups on the membrane surface layer modifies its electrochemical properties so that conductivity of plasma-treated membranes increase.

Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

Indian Academy of Sciences (India)

2016-08-26

Aug 26, 2016 ... It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs ...

Characterization of graphite etched with potassium hydroxide and its application in fast-rechargeable lithium ion batteries

Science.gov (United States)

Shim, Jae-Hyun; Lee, Sanghun

2016-08-01

Surface-modified graphite for application as an anode material in lithium ion batteries was obtained by etching with KOH under mild conditions without high-temperature annealing. The surface of the etched graphite is covered with many nano-sized pores that act as entrances for lithium ions during the charging process. As compared with pristine graphite and other references such as pitch-coated or etched graphite samples with annealing, our non-annealed etched graphite exhibits excellent electrochemical properties, particularly at fast charging rates of over 2.5 C. While avoidance of the trade-off between increase of irreversible capacity and good rate capability has previously been a main concern in highly porous carbonaceous materials, we show that the slightly larger surface area created by the etching does not induce a significant increase of irreversible capacity. This study shows that it is important to limit the size of pores to the nanometer scale for excellent battery performance, which is possible by etching under relatively mild conditions.

Performance enhancement of membrane electrode assemblies with plasma etched polymer electrolyte membrane in PEM fuel cell

Energy Technology Data Exchange (ETDEWEB)

Cho, Yong-Hun; Yoon, Won-Sub [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea); Bae, Jin Woo; Cho, Yoon-Hwan; Lim, Ju Wan; Ahn, Minjeh; Jho, Jae Young; Sung, Yung-Eun [World Class University (WCU) program of Chemical Convergence for Energy and Environment (C2E2), School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), 599 Gwanak-Ro, Gwanak-gu, Seoul 151-744 (Korea); Kwon, Nak-Hyun [Fuel Cell Vehicle Team 3, Advanced Technology Center, Corporate Research and Development Division, Hyundai-Kia Motors, 104 Mabuk-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-912 (Korea)

2010-10-15

In this work, a surface modified Nafion 212 membrane was fabricated by plasma etching in order to enhance the performance of a membrane electrode assembly (MEA) in a polymer electrolyte membrane fuel cell. Single-cell performance of MEA at 0.7 V was increased by about 19% with membrane that was etched for 10 min compared to that with untreated Nafion 212 membrane. The MEA with membrane etched for 20 min exhibited a current density of 1700 mA cm{sup -2} at 0.35 V, which was 8% higher than that of MEA with untreated membrane (1580 mA cm{sup -2}). The performances of MEAs containing etched membranes were affected by complex factors such as the thickness and surface morphology of the membrane related to etching time. The structural changes and electrochemical properties of the MEAs with etched membranes were characterized by field emission scanning electron microscopy, Fourier transform-infrared spectrometry, electrochemical impedance spectroscopy, and cyclic voltammetry. (author)

Plasma etching of patterned tungsten

International Nuclear Information System (INIS)

Franssila, S.

1993-01-01

Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

Transport in reversibly laser-modified YBa2Cu3O/sub 7-//sub x/ superconducting thin films

International Nuclear Information System (INIS)

Krchnavek, R.R.; Chan, S.; Rogers, C.T.; De Rosa, F.; Kelly, M.K.; Miceli, P.F.; Allen, S.J.

1989-01-01

A focused argon ion laser beam in a controlled ambient is used to modify the transport properties of superconducting YBa 2 Cu 3 O/sub 7-//sub x/ thin films. The laser-modified region shows a sharp transition temperature (T/sub c/≅76 K) that is reduced from the unmodified regions of the film (T/sub c/≅87 K). In situ monitoring of the room-temperature electrical resistance is used to control the laser processing and prevent formation of the semiconducting phase. The original properties of the superconducting film can be recovered by plasma oxidation indicating that the laser-induced phase is oxygen deficient

On the long standing question of nuclear track etch induction time: Surface-cap model

International Nuclear Information System (INIS)

Rana, Mukhtar Ahmed

2008-01-01

Using a systematic set of experiments, nuclear track etch induction time measurements in a widely used CR-39 detector were completed for accessible track-forming particles (fission fragments, 5.2 MeV alpha particles and 5.9 MeV antiprotons). Results of the present work are compared with appropriately selected published results. The possibility of the use of etch induction time for charged particle identification is evaluated. Analysis of experimental results along with the use of well-established theoretical concepts yielded a model about delay in the start of chemical etching of nuclear tracks. The suggested model proposes the formation of a surface-cap (top segment) in each nuclear track consisting of chemically modified material with almost same or even higher resistance to chemical etching compared with bulk material of the track detector. Existing track formation models are reviewed very briefly, which provide one of the two bases of the proposed model. The other basis of the model is the general behavior of hot or energised material having a connection with an environment containing a number of species like ordinary air. Another reason for the delay in the start of etching is suggested as the absence of localization of etching atoms/molecules, which is present during etching at depth along the latent track

Large area synthesis, characterization, and anisotropic etching of two dimensional tungsten disulfide films

International Nuclear Information System (INIS)

Mutlu, Zafer; Ozkan, Mihrimah; Ozkan, Cengiz S.

2016-01-01

Emergent properties of tungsten disulfide at the quantum confinement limit hold promise for electronic and optoelectronic applications. Here we report on the large area synthesis of atomically thin tungsten disulfide films with strong photoluminescence properties via sulfurization of the pre-deposited tungsten films. Detailed characterization of the pre-deposited tungsten films and tungsten disulfide films are performed using microscopy and spectroscopy methods. By directly heating tungsten disulfide films in air, we have shown that the films tend to be etched into a series of triangular shaped pits with the same orientations, revealing the anisotropic etching behavior of tungsten disulfide edges. Moreover, the dimensions of the triangular pits increase with the number of layers, suggesting a thickness dependent behavior of etching in tungsten disulfide films. This method offers a promising new avenue for engineering the edge structures of tungsten disulfide films. - Highlights: • Large-scale synthesis of WS_2 films is achieved via sulfurization of W films. • Annealing of W films leads to a substantial improvement in the quality of WS_2 films. • WS_2 films show laser power dependent photoluminescence characteristics. • WS_2 films are etched with well-oriented triangular pits upon annealing in air. • Anisotropic oxidative etching is greatly affected by the thickness of WS_2 films.

Dry Etching

DEFF Research Database (Denmark)

Stamate, Eugen; Yeom, Geun Young

2016-01-01

generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

Science.gov (United States)

El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

2018-01-01

This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

Effect of pre-etching on sealing ability of two current self-etching adhesives

Directory of Open Access Journals (Sweden)

K Khosravi

2005-05-01

Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

Science.gov (United States)

Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

2016-02-01

This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

Directory of Open Access Journals (Sweden)

Ann-Kathrin Kleinschmidt

2016-11-01

Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

Controlled ion track etching

Science.gov (United States)

George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

2006-03-01

It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

More vertical etch profile using a Faraday cage in plasma etching

Science.gov (United States)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

Device fabrication by plasma etching

International Nuclear Information System (INIS)

Mogab, C.J.

1980-01-01

Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

Improvement of Plating Characteristics Between Nickel and PEEK by Plasma Treatment and Chemical Etching

International Nuclear Information System (INIS)

Lee, Hye W.; Lee, Jong K.; Park, Ki Y.

2009-01-01

Surface of PEEK(poly-ether-ether-ketone) was modified by chemical etching, plasma treatment and mechanical grinding to improve the plating adhesion. The plating characteristics of these samples were studied by the contact angle, plating thickness, gloss and adhesion. Chemical etching and plasma treatment increased wettability, adhesion and gloss. The contact angle of as-received PEEK was 61 .deg. . The contact angles of chemical etched, plasma treated or both were improved to the range of 15∼33 .deg. . In the case of electroless plating, the thickest layer without blister was 1.6 μm. The adhesion strengths by chemical etching, plasma treatment or both chemical etching and plasma treatment were 75 kgf/cm 2 , 102 kgf/cm 2 , 113 kgf/cm 2 , respectively, comparing to the 24 kgf/cm 2 of as-received. In the case of mechanically ground PEEKs, the adhesion strengths were higher than those unground, with the sacrifice of surface gloss. The gloss of untreated PEEK were greater than mechanically ground PEEKs. Plating thickness increased linearly with the plating times

Laser in operative dentistry

OpenAIRE

E. Yasini; Gh. Rahbari; A. Matorian

1994-01-01

Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy) and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry), etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks...

Influence of Etching Mode on Enamel Bond Durability of Universal Adhesive Systems.

Science.gov (United States)

Suzuki, T; Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Endo, H; Erickson, R L; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to determine the enamel bond durability of three universal adhesives in different etching modes through fatigue testing. The three universal adhesives used were Scotchbond Universal, Prime&Bond Elect universal dental adhesive, and All-Bond Universal light-cured dental adhesive. A single-step self-etch adhesive, Clearfil S 3 Bond Plus was used as a control. The shear bond strength (SBS) and shear fatigue strength (SFS) to human enamel were evaluated in total-etch mode and self-etch mode. A stainless steel metal ring with an internal diameter of 2.4 mm was used to bond the resin composite to the flat-ground (4000-grit) tooth surfaces for determination of both SBS and SFS. For each enamel surface treatment, 15 specimens were prepared for SBS and 30 specimens for SFS. The staircase method for fatigue testing was then used to determine the SFS of the resin composite bonded to the enamel using 10-Hz frequencies for 50,000 cycles or until failure occurred. Scanning electron microscopy was used to observe representative debonded specimen surfaces and the resin-enamel interfaces. A two-way analysis of variance and the Tukey post hoc test were used for analysis of the SBS data, whereas a modified t-test with Bonferroni correction was used for the SFS data. All adhesives in total-etch mode showed significantly higher SBS and SFS values than those in self-etch mode. Although All-Bond Universal in self-etch mode showed a significantly lower SBS value than the other adhesives, there was no significant difference in SFS values among the adhesives in this mode. All adhesives showed higher SFS:SBS ratios in total-etch mode than in self-etch mode. With regard to the adhesive systems used in this study, universal adhesives showed higher enamel bond strengths in total-etch mode. Although the influence of different etching modes on the enamel-bonding performance of universal adhesives was found to be dependent on the adhesive material, total-etch mode

Infrared interference patterns for new capabilities in laser end point detection

International Nuclear Information System (INIS)

Heason, D J; Spencer, A G

2003-01-01

Standard laser interferometry is used in dry etch fabrication of semiconductor and MEMS devices to measure etch depth, rate and to detect the process end point. However, many wafer materials, such as silicon are absorbing at probing wavelengths in the visible, severely limiting the amount of information that can be obtained using this technique. At infrared (IR) wavelengths around 1500 nm and above, silicon is highly transparent. In this paper we describe an instrument that can be used to monitor etch depth throughout a thru-wafer etch. The provision of this information could eliminate the requirement of an 'etch stop' layer and improve the performance of fabricated devices. We have added a further new capability by using tuneable lasers to scan through wavelengths in the near IR to generate an interference pattern. Fitting a theoretical curve to this interference pattern gives in situ measurement of film thickness. Whereas conventional interferometry would only allow etch depth to be monitored in real time, we can use a pre-etch thickness measurement to terminate the etch on a remaining thickness of film material. This paper discusses the capabilities of, and the opportunities offered by, this new technique and gives examples of applications in MEMS and waveguides

Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

International Nuclear Information System (INIS)

Aydemir, A; Akin, T

2012-01-01

In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

Picosecond laser registration of interference pattern by oxidation of thin Cr films

Energy Technology Data Exchange (ETDEWEB)

Veiko, Vadim; Yarchuk, Michail [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Zakoldaev, Roman, E-mail: zakoldaev@gmail.com [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Gedvilas, Mindaugas; Račiukaitis, Gediminas [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300, Vilnius (Lithuania); Kuzivanov, Michail; Baranov, Alexander [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation)

2017-05-15

Highlights: • Periodical patterning of thin films was achieved by combining two technologies. • Selective chemical etching was combined with laser-induced oxidation. • Formation of the protective oxide layer prevented of chromium film from etching. • 1D binary grating with the chromium stripe width of 750 nm was fabricated. - Abstract: The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image. Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.

Bond strength of orthodontic light-cured resin-modified glass ionomer cement.

Science.gov (United States)

Cheng, Hsiang Yu; Chen, Chien Hsiu; Li, Chuan Li; Tsai, Hung Huey; Chou, Ta Hsiung; Wang, Wei Nan

2011-04-01

The purpose of this study was to compare the bond strengths and debonded interfaces achieved with light-cured resin-modified glass ionomer cement (RMGIC) and conventional light-cured composite resin. In addition, the effects of acid etching and water contamination were examined. One hundred human premolars were randomly divided into five equal groups. The mini Dyna-lock upper premolar bracket was selected for testing. The first four groups were treated with light-cured RMGIC with or without 15 per cent phosphoric acid-etching treatment and with or without water contamination preceding bracket bonding. The control samples were treated with the conventional light-cured Transbond composite resin under acid etching and without water contamination. Subsequently, the brackets were debonded by tensile force using an Instron machine. The modified adhesive remnant index (ARI) scores were assigned to the bracket base of the debonded interfaces using a scanning electron microscope. The bond strength and modified ARI scores were determined and analysed statistically by one-way analysis of variance and chi-square test. Under all four conditions, the bond strength of the light-cure RMGIC was equal to or higher than that of the conventional composite resin. The highest bond strength was achieved when using RMGIC with acid etching but without water contamination. The modified ARI scores were 2 for Fuji Ortho LC and 3 for Transbond. No enamel detachment was found in any group. Fifteen per cent phosphoric acid etching without moistening the enamel of Fuji Ortho LC provided the more favourable bond strength. Enamel surfaces, with or without water contamination and with or without acid etching, had the same or a greater bond strength than Transbond.

Shear bond strength of composite bonded with three adhesives to Er,Cr:YSGG laser-prepared enamel.

Science.gov (United States)

Türkmen, Cafer; Sazak-Oveçoğlu, Hesna; Günday, Mahir; Güngör, Gülşad; Durkan, Meral; Oksüz, Mustafa

2010-06-01

To assess in vitro the shear bond strength of a nanohybrid composite resin bonded with three adhesive systems to enamel surfaces prepared with acid and Er,Cr:YSGG laser etching. Sixty extracted caries- and restoration-free human maxillary central incisors were used. The teeth were sectioned 2 mm below the cementoenamel junction. The crowns were embedded in autopolymerizing acrylic resin with the labial surfaces facing up. The labial surfaces were prepared with 0.5-mm reduction to receive composite veneers. Thirty specimens were etched with Er,Cr:YSGG laser. This group was also divided into three subgroups, and the following three bonding systems were then applied on the laser groups and the other three unlased groups: (1) 37% phosphoric acid etch + Bond 1 primer/adhesive (Pentron); (2) Nano-bond self-etch primer (Pentron) + Nano-bond adhesive (Pentron); and (3) all-in-one adhesive-single dose (Futurabond NR, Voco). All of the groups were restored with a nanohybrid composite resin (Smile, Pentron). Shear bond strength was measured with a Zwick universal test device with a knife-edge loading head. The data were analyzed with two-factor ANOVA. There were no significant differences in shear bond strength between self-etch primer + adhesive and all-in-one adhesive systems for nonetched and laser-etched enamel groups (P > .05). However, bond strength values for the laser-etched + Bond 1 primer/adhesive group (48.00 +/- 13.86 MPa) were significantly higher than the 37% phosphoric acid + Bond 1 primer/adhesive group (38.95 +/- 20.07 MPa) (P enamel surface more effectively than 37% phosphoric acid for subsequent attachment of composite material.

Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

Science.gov (United States)

Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

2016-01-01

Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

Science.gov (United States)

Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

2008-01-01

This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

Circular lasers for telecommunications and rf/photonics applications

Science.gov (United States)

Griffel, Giora

2000-04-01

Following a review of ring resonator research in the past decade we shall report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply-etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally- coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The racetrack laser have curved sections of 150 micrometers radius with negligible bending loss. The lasers operate CW single mode up to nearly twice threshold with a 26 dB side-mode-suppression ratio. We shall also present a transfer matrix formalism for the analysis of ring resonator arrays and indicate application examples for flat band filter synthesis.

Integrated two-section discrete mode laser

NARCIS (Netherlands)

Anandarajah, P.M.; Latkowski, S.; Browning, C.; Zhou, R.; O'Carroll, J.; Phelan, R.; Kelly, B.; O'Gorman, J.; Barry, L.P.

2012-01-01

The authors present the design and characterization of a novel integrated two-section discrete mode index patterned diode laser source. The two slotted regions etched into the laser ridge waveguide are formed in the same fabrication step as the ridge, thus avoiding the requirement for complex

Recent advances in long wavelength quantum dot lasers and amplifiers

NARCIS (Netherlands)

Nötzel, R.; Bente, E.A.J.M.; Smit, M.K.; Dorren, H.J.S.

2009-01-01

We demonstrate 1.55-µm InAs/InGaAsP/InP (100) quantum dot (QD) shallow and deep etched Fabry-Pérot and ring lasers, micro-ring lasers, mode-locked lasers, Butt-joint integrated lasers, polarization control of gain, and wavelength conversion in QD amplifiers.

In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

Science.gov (United States)

Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

2014-08-01

To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

Thermodynamics of nuclear track chemical etching

Science.gov (United States)

Rana, Mukhtar Ahmed

2018-05-01

This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

2012-07-01

In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

Coherent light scattering by nuclear etched tracks in the PADC (a form of CR-39)

Energy Technology Data Exchange (ETDEWEB)

Groetz, J.E.; Chambaudet, A. [Universite de Franche-Comte, Besancon (France). Lab. de Microanalyses Nucleaires; Lacourt, A. [Laboratoire d`Optique P.M. Duffieux, UMR 6603 CNRS, Universite de Franche-Comte, 16 route de Gray, 25030 Besancon Cedex (France)

1998-08-01

A new kind of measurement has been proposed to improve the reading of the solid state nuclear track detector CR-39. This method is based on coherent light scattering (He-Ne laser) by etched proton tracks, and is complementary to observation under an optical microscope and reading by optical density of the CR-39. The irradiated and chemically etched CR-39 sample is illuminated by a laser beam under a normal incidence angle. The light intensity diffracted by the tracks beyond the sample - defined with the bi-directional transmissive distribution functions - is measured with a photodiode. Thus, the bi-directional transmissive distribution functions depend on the characteristics of the irradiation, namely the track density, track sizes and orientations. We have performed a track light diffraction model calculation through the use of the Fraunhofer diffraction, Babinet`s principle and the spatial coherence and incoherence. We compared calculations and experimental results for the different shapes of tracks: conical, oblique and spherical-shaped. (orig.) 14 refs.

Coherent light scattering by nuclear etched tracks in the PADC (a form of CR-39)

International Nuclear Information System (INIS)

Groetz, J.E.; Chambaudet, A.

1998-01-01

A new kind of measurement has been proposed to improve the reading of the solid state nuclear track detector CR-39. This method is based on coherent light scattering (He-Ne laser) by etched proton tracks, and is complementary to observation under an optical microscope and reading by optical density of the CR-39. The irradiated and chemically etched CR-39 sample is illuminated by a laser beam under a normal incidence angle. The light intensity diffracted by the tracks beyond the sample - defined with the bi-directional transmissive distribution functions - is measured with a photodiode. Thus, the bi-directional transmissive distribution functions depend on the characteristics of the irradiation, namely the track density, track sizes and orientations. We have performed a track light diffraction model calculation through the use of the Fraunhofer diffraction, Babinet's principle and the spatial coherence and incoherence. We compared calculations and experimental results for the different shapes of tracks: conical, oblique and spherical-shaped. (orig.)

Thinning of N-face GaN (0001) samples by inductively coupled plasma etching and chemomechanical polishing

International Nuclear Information System (INIS)

Rizzi, F.; Gu, E.; Dawson, M. D.; Watson, I. M.; Martin, R. W.; Kang, X. N.; Zhang, G. Y.

2007-01-01

The processing of N-polar GaN (0001) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl 2 /Ar or Cl 2 /BCl 3 Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3 nm. Maximum N-face etch rates of 370-390 nm/min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500 nm/h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2 nm

Single-transverse-mode Ti:sapphire rib waveguide laser

NARCIS (Netherlands)

Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

2005-01-01

Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

Shear bond strength and SEM morphology evaluation of different dental adhesives to enamel prepared with ER:YAG laser

Directory of Open Access Journals (Sweden)

Patrícia T Pires

2013-01-01

Full Text Available Context: Early observations of enamel surfaces prepared by erbium lasers motivated clinicians to use laser as an alternative to chemical etching. Aims: Evaluate shear bond strength (SBS values of different dental adhesives on Erbium:Yttrium Aluminum Garnet (Er:YAG laser prepared enamel and to evaluate possible etching patterns correlations between dental adhesives and SBS values. Subjects and Methods: One hundred bovine incisors were randomly assigned to SBS tests on enamel (n = 15 and to enamel morphology analysis ( n = 5 after Er:YAG laser preparation as follows: Group I - 37% phosphoric acid (PA+ ExciTE® ; Group II - ExciTE® ; Group III - AdheSE® self-etching; Group IV - FuturaBond® no-rinse. NR; Group V - Xeno® V. Teeth were treated with the adhesive systems and subjected to thermal cycling. SBS were performed in a universal testing machine at 5 mm/min. Statistical Analysis Used: One-way ANOVA and post-hoc tests (p < 0.05. For the morphology evaluation, specimens were immersed in Ethylenediamine tetraacetic acid (EDTA and the etching pattern analyzed under Scanning Electron Microscope (SEM. Results: Mean bond strengths were Group I - 47.17 ± 1.61 MPa (type I etching pattern; Group II - 32.56 ± 1.64 MPa, Group III - 29.10 ± 1.34 MPa, Group IV - 23.32 ± 1.53 MPa (type III etching pattern; Group V - 24.43 MPa ± 1.55 (type II etching pattern. Conclusions: Different adhesive systems yielded significantly different SBSs. Acid etching significantly increased the adhesion in laser treated enamel. No differences in SBS values were obtained between AdheSE® and ExciTE® without condition with PA. FuturaBond® NR and Xeno® V showed similar SBS, which was lower in comparison to the others adhesives. No correlation between enamel surface morphology and SBS values was observed, except when PA was used.

Effects of a pulsed Nd:YAG laser on enamel and dentin

Science.gov (United States)

Myers, Terry D.

1990-06-01

Enamel and dentin samples were exposed extraorally to a pulsed neodymium yttriuma1uminumgarnet (Nd:YAG) laser. The lased samples were observed using both scanning electron microscopy and histological techniques to determine the effects of the laser. The present study has provided the following points: (1) Properly treated, enamel can be 1aser etched to a depth comparable to that achieved with phosphoric acid etching; and (2) both carious and noncarious dentin can be vaporized by the Nd:YAG laser. No cracking or chipping of any enamel or dentin sample was observed histologically or under the SEM.

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

Science.gov (United States)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1980-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1979-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

An etching mask and a method to produce an etching mask

DEFF Research Database (Denmark)

2016-01-01

The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

Non-destructive evaluation of UV pulse laser-induced damage performance of fused silica optics.

Science.gov (United States)

Huang, Jin; Wang, Fengrui; Liu, Hongjie; Geng, Feng; Jiang, Xiaodong; Sun, Laixi; Ye, Xin; Li, Qingzhi; Wu, Weidong; Zheng, Wanguo; Sun, Dunlu

2017-11-24

The surface laser damage performance of fused silica optics is related to the distribution of surface defects. In this study, we used chemical etching assisted by ultrasound and magnetorheological finishing to modify defect distribution in a fused silica surface, resulting in fused silica samples with different laser damage performance. Non-destructive test methods such as UV laser-induced fluorescence imaging and photo-thermal deflection were used to characterize the surface defects that contribute to the absorption of UV laser radiation. Our results indicate that the two methods can quantitatively distinguish differences in the distribution of absorptive defects in fused silica samples subjected to different post-processing steps. The percentage of fluorescence defects and the weak absorption coefficient were strongly related to the damage threshold and damage density of fused silica optics, as confirmed by the correlation curves built from statistical analysis of experimental data. The results show that non-destructive evaluation methods such as laser-induced fluorescence and photo-thermal absorption can be effectively applied to estimate the damage performance of fused silica optics at 351 nm pulse laser radiation. This indirect evaluation method is effective for laser damage performance assessment of fused silica optics prior to utilization.

Micro-structured rough surfaces by laser etching for heat transfer enhancement on flush mounted heat sinks

International Nuclear Information System (INIS)

Ventola, L; Scaltrito, L; Ferrero, S; Chiavazzo, E; Asinari, P; Maccioni, G

2014-01-01

The aim of this work is to improve heat transfer performances of flush mounted heat sinks used in electronic cooling. To do this we patterned 1.23 cm 2 heat sinks surfaces by microstructured roughnesses built by laser etching manufacturing technique, and experimentally measured the convective heat transfer enhancements due to different patterns. Each roughness differs from the others with regards to the number and the size of the micro-fins (e.g. the micro- fin length ranges from 200 to 1100 μm). Experimental tests were carried out in forced air cooling regime. In particular fully turbulent flows (heating edge based Reynolds number ranging from 3000 to 17000) were explored. Convective heat transfer coefficient of the best micro-structured heat sink is found to be roughly two times compared to the smooth heat sinks one. In addition, surface area roughly doubles with regard to smooth heat sinks, due to the presence of micro-fins. Consequently, patterned heat sinks thermal transmittance [W/K] is found to be roughly four times the smooth heat sinks one. We hope this work may open the way for huge boost in the technology of electronic cooling by innovative manufacturing techniques.

Nuclear particle track-etched anti-bogus mark

International Nuclear Information System (INIS)

He Xiangming; Yan Yushun; Zhang Quanrong

2003-01-01

Nuclear particle track-etched anti-bogus mark is a new type of forgery-proof product after engraving gravure printing, thermocolour, fluorescence, laser hologram and metal concealed anti-bogus mark. The mark is manufactured by intricate high technology and the state strictly controlled sensitive nuclear facilities to ensure the mark not to be copied. The pattern of the mark is specially characterized by permeability of liquid to be discriminated from forgery. The genuine mark can be distinguished from sham one by transparent liquid (e.g. water), colorful pen and chemical reagent. The mark has passed the official examination of health safety. It is no danger of nuclear irradiation. (author)

Dry etching technologies for reflective multilayer

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Optimizing shape uniformity and increasing structure heights of deep reactive ion etched silicon x-ray lenses

DEFF Research Database (Denmark)

Stöhr, Frederik; Wright, Jonathan; Simons, Hugh

2015-01-01

Line-focusing compound silicon x-ray lenses with structure heights exceeding 300 μm were fabricated using deep reactive ion etching. To ensure profile uniformity over the full height, a new strategy was developed in which the perimeter of the structures was defined by trenches of constant width....... The remaining sacrificial material inside the lens cavities was removed by etching through the silicon wafer. Since the wafers become fragile after through-etching, they were then adhesively bonded to a carrier wafer. Individual chips were separated using laser micro machining and the 3D shape of fabricated...... analysis, where a slight bowing of the lens sidewalls and an insufficiently uniform apex region are identified as resolution-limiting factors. Despite these, the proposed fabrication route proved a viable approach for producing x-ray lenses with large structure heights and provides the means to improve...

Comparative study of the shear bond strength of composite resin bonded to enamel treated with acid etchant and erbium, chromium: Yttrium, scandium, gallium, garnet laser

Directory of Open Access Journals (Sweden)

Adel Sulaiman Alagl

2016-01-01

Full Text Available Aim: The purpose of this investigation is in vitro comparison of the shear bond strength (SBS of composite resin bonded to enamel pretreated with an acid etchant against enamel etched with erbium, chromium: yttrium, scandium, gallium, garnet (Er, Cr:YSGG laser. Materials and Methods: Sixty premolars were sectioned mesiodistally and these 120 specimens were separated into two groups of 60 each (Groups A and B. In Group A (buccal surfaces, enamel surface was etched using 37% phosphoric acid for 15 s. In Group B (lingual surfaces, enamel was laser-etched at 2W for 10 s by Er, Cr:YSGG laser operational at 2780 nm with pulse duration of 140 μs and a frequency of 20 Hz. After application of bonding agent on all test samples, a transparent plastic cylinder of 1.5 mm × 3 mm was loaded with composite and bonded by light curing for 20 s. All the samples were subjected to SBS analysis using Instron Universal testing machine. Failure modes were observed under light microscope and grouped as adhesive, cohesive, and mixed. Failure mode distributions were compared using the Chi-square test. Results: SBS values obtained for acid-etched enamel were in the range of 7.12–28.36 megapascals (MPa and for laser-etched enamel were in the range of 6.23–23.35 MPa. Mean SBS for acid-etched enamel was 15.77 ± 4.38 MPa, which was considerably greater (P < 0.01 than laser-etched enamel 11.24 ± 3.76 MPa. The Chi-square test revealed that the groups showed no statistically significant differences in bond failure modes. Conclusions: We concluded that the mean SBS of composite with acid etching is significantly higher as compared to Er, Cr: YSGG (operated at 2W for 10 s laser-etched enamel.

Process for etching zirconium metallic objects

International Nuclear Information System (INIS)

Panson, A.J.

1988-01-01

In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

Use of CR-39 foils for personnel neutron dosimetry: improved electrochemical etching chambers and procedures

International Nuclear Information System (INIS)

Hankins, D.E.; Homann, S.G.; Westermark, J.

1986-01-01

The electrochemical etching procedures for the new dosimetry system that uses foils of CR-39 plastic has been improved. During 1985, the etching chambers were modified to correct several problems and the changes to the etching procedures were studied, which gave a more uniform track density and size. The currently recommended etch parameters are given. A new generation of CR-39 material from the manufacturer proved to have a considerably lower background track density and a higher sensitivity; the new foils are also more uniform in thickness, which eliminates the need to numerically compensate for thickness variations. The energy dependence of the CR-39 using monoenergetic neutrons from accelerators at Battelle Northwest Laboratories and at Los Alamos National Laboratory was determined. Some variation was found in the energy dependence, but it is believed this was caused by changes in the etching procedures and by uncertainties in the fluences of the neutrons from the accelerators. A means by which the counting of CR-39 tracks may be automated is suggested; this would be very useful in adapting the CR-39 dosimetry system to large-scale use

Laser materials development by means of a solid-state bonding method

International Nuclear Information System (INIS)

Sugiyama, Akira

2011-01-01

This paper reviews laser materials development via a bonding method without adhesives. Instead of conventional chemical etching, a dry etching technique using an argon beam has been newly developed for the bonding method. This method meets the requirement for the use of optical materials. We succeeded in the fabrication of a composite laser crystal with good heat conductivity by bonding two kinds of crystals; one is neodymium-doped YVO 4 crystal (Nd:YVO 4 ) and the other is its host crystal YVO 4 . In the comparison of the laser performance between the normal and composite crystal, the composite one shows the good lasing capability of increasing laser output without fracture of the crystal due to thermal stress which appeared in the normal one. (author)

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

Science.gov (United States)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

International Nuclear Information System (INIS)

Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

2001-01-01

To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

Microperimetry and fundus autofluorescence in diabetic macular edema: subthreshold micropulse diode laser versus modified early treatment diabetic retinopathy study laser photocoagulation.

Science.gov (United States)

Vujosevic, Stela; Bottega, Elisa; Casciano, Margherita; Pilotto, Elisabetta; Convento, Enrica; Midena, Edoardo

2010-06-01

The purpose of this study was to evaluate and compare microperimetry and fundus autofluorescence (FAF) after subthreshold micropulse diode laser versus modified Early Treatment Diabetic Retinopathy Study photocoagulation for clinically significant diabetic macular edema. A prospective randomized clinical trial including 62 eyes (50 patients) with untreated, center-involving, clinically significant diabetic macular edema was performed. All patients underwent best-corrected visual acuity determination (logarithm of the minimum angle of resolution), slit-lamp biomicroscopy, FAF, optical coherence tomography, microperimetry (macular sensitivity), and fluorescein angiography before and after treatment. Best-corrected visual acuity, optical coherence tomography, microperimetry, and FAF were repeated at 1-, 3-, 6-, 9-, and 12-month follow-up examinations. Fluorescein angiography was performed at baseline and at 6 and 12 months. Before treatment, demographic and macular parameters were not different between the two treatment groups. At 12 months, best-corrected visual acuity remained stable in both groups (P = 0.41 and P = 0.82), mean central retinal thickness decreased in both groups (P = 0.0002 and P autofluorescence never changed in the micropulse diode laser group even after retreatment. In the Early Treatment Diabetic Retinopathy Study group, FAF increased up to 9 months and decreased in 6 eyes (20%) at 12 months. Micropulse diode laser seems to be as effective as modified Early Treatment Diabetic Retinopathy Study laser photocoagulation in the treatment of clinically significant diabetic macular edema. Micropulse diode laser treatment does not determine any change on FAF showing (at least) nonclinically visible damage of the retinal pigment epithelium. Microperimetry data encourage the use of a new, less aggressive laser therapeutic approach in the treatment of clinically significant diabetic macular edema.

The etching behaviour of silicon carbide compacts

International Nuclear Information System (INIS)

Jepps, N.W.; Page, T.F.

1981-01-01

A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

Rare-earth-ion-doped ultra-narrow-linewidth lasers on a silicon chip and applications to intra-laser-cavity optical sensing

NARCIS (Netherlands)

Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus

We report on diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Er-doped and Yb-doped Al2O3 on standard thermally oxidized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into

Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

International Nuclear Information System (INIS)

Dajko, G.

1991-01-01

Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

Scanning electron microscopy evaluation of the interaction pattern between dentin and resin after cavity preparation using Er:YAG laser; Avaliacao, atraves de microscopia eletronica de varredura, do padrao de interacao dentina-resina em cavidades preparadas com laser de Er:YAG

Energy Technology Data Exchange (ETDEWEB)

Schein, Marcelo Thome

2001-07-01

The aim of this study was to describe the interaction pattern formed between dentin and resin on cavities prepared with an erbium laser (Er:YAG). The morphological aspect of the irradiated dentin after acid etching was also observed. Ten dentin disks were obtained from fresh extracted third molars. Each disk received two cavities, one prepared with a conventional high-speed drill, while the other cavity was obtained by the use of an Er:YAG laser (KaVo KEY Laser, KaVo Co.). The laser treatment was performed with 250 mJ/pulse, 4 Hz, non contact mode, focused beam, and a fine water mist was used. Five disks were prepared for morphological analysis of the acid etched dentin. The other five disks had their cavities restored with Single Bond (3M) followed by Z100 resin (3M). The specimens were observed under scanning electron microscopy after dentin-resin interface demineralization and deproteinization. It was observed that the morphological characteristics of the acid-etched irradiated dentin were not favorable to the diffusion of monomers through the collagen network. The dentin resin interfacial aspect of irradiated dentin, after acid etching, showed thin tags and scarce hybridization zones, which agreed with the morphology of the irradiated and acid-etched dentin substrate observed. (author)

Narrow-linewidth lasers on a silicon chip

NARCIS (Netherlands)

Bernhardi, Edward; Pollnau, Markus; Di Bartolo, Baldassare; Collins, John; Silvestri, Luciano

2015-01-01

Diode-pumped distributed-feedback (DFB) channel waveguide lasers were demonstrated in Er3+-doped and Yb3+-doped Al2O3 on standard thermally ox-idized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The

Etching in microsystem technology

CERN Document Server

Kohler, Michael

2008-01-01

Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

High-speed scanning ablation of dental hard tissues with a λ = 9.3 μm CO2 laser: adhesion, mechanical strength, heat accumulation, and peripheral thermal damage

Science.gov (United States)

Nguyen, Daniel; Chang, Kwang; Hedayatollahnajafi, Saba; Staninec, Michal; Chan, Kenneth; Lee, Robert; Fried, Daniel

2011-07-01

CO2 lasers can be operated at high laser pulse repetition rates for the rapid and precise removal of dental decay. Excessive heat accumulation and peripheral thermal damage is a concern when using high pulse repetition rates. Peripheral thermal damage can adversely impact the mechanical strength of the irradiated tissue, particularly for dentin, and reduce the adhesion characteristics of the modified surfaces. The interpulpal temperature rise was recorded using microthermocouples situated at the roof of the pulp chamber on teeth that were occlusally ablated using a rapidly-scanned CO2 laser operating at 9.3 μm with a pulse duration of 10 to 15 μs and repetition rate of 300 Hz over a 2 min time course. The adhesion strength of laser treated enamel and dentin surfaces was measured for various laser scanning parameters with and without post-ablation acid etching using the single-plane shear test. The mechanical strength of laser-ablated dentin surfaces were determined via the four-point bend test and compared to control samples prepared with 320 grit wet sand paper to simulate conventional preparations. Thermocouple measurements indicated that the temperature remained below ambient temperature if water-cooling was used. There was no discoloration of either dentin or enamel laser treated surfaces, the surfaces were uniformly ablated, and there were no cracks visible. Four-point bend tests yielded mean mechanical strengths of 18.2 N (s.d. = 4.6) for ablated dentin and 18.1 N (s.d. = 2.7) for control (p > 0.05). Shear tests yielded mean bond strengths approaching 30 MPa for both enamel and dentin under certain irradiation conditions. These values were slightly lower than nonirradiated acid-etched control samples. Additional studies are needed to determine if the slightly lower bond strength than the acid-etched control samples is clinically significant. These measurements demonstrate that enamel and dentin surfaces can be rapidly ablated by CO2 lasers with minimal

Etching conditions and shape of tracks

International Nuclear Information System (INIS)

Kudo, Shuichi

1979-01-01

The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

Energy Technology Data Exchange (ETDEWEB)

Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

2008-01-09

A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

UV-assisted selective chemical etching of relief gratings in Er/Yb-codoped IOG1 phosphate glass

Energy Technology Data Exchange (ETDEWEB)

Pappas, C; Pissadakis, S [Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Vasilika Vouton, PO Box 1527, Heraklion 71 110, GREECE (Greece)

2007-04-15

The patterning of sub-micron periodicity Bragg reflectors in Er/Yb-codoped IOG1, phosphate glass is demonstrated. A high yield patterning technique is presented, wherein high volume damage is induced into the glass matrix by exposure to intense UV radiation, and subsequently a chemical development in a strong acid selectively etches the exposed areas. The grating reflectors were fabricated by employing an elliptical Talbot interferometer and the output of a 213nm, 150ps frequency quintupled Nd:YAG laser. The grating depth of the etched relief pattern in time was measured at fixed time intervals and the dependence is presented in upon the etching time and exposure conditions. The gratings fabricated are examined by atomic and scanning electron microscopy for revealing the topology of the relief structure. Gratings with period of the order of 500nm were fabricated, having a maximum depth of 60nm.

Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

Science.gov (United States)

Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

2016-01-01

ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

GaSb-based single-mode distributed feedback lasers for sensing (Conference Presentation)

Science.gov (United States)

Gupta, James A.; Bezinger, Andrew; Lapointe, Jean; Poitras, Daniel; Aers, Geof C.

2017-02-01

GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

Science.gov (United States)

Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2018-03-30

The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

Fabrication of Ni stamp with high aspect ratio, two-leveled, cylindrical microstructures using dry etching and electroplating

DEFF Research Database (Denmark)

Petersen, Ritika Singh; Keller, Stephan Sylvest; Hansen, Ole

2015-01-01

obtained by defining a reservoir and a separating trench with different depths of 85 and 125 μm, respectively, in a single embossing step. The fabrication of the required two leveled stamp is done using a modified DEEMO (dry etching, electroplating and molding) process. Dry etching using the Bosch process...... and electroplating are optimized to obtain a stamp with smooth stamp surfaces and a positive sidewall profile. Using this stamp, hot embossing is performed successfully with excellent yield and high replication fidelity....

Comparative evaluation of surface topography of tooth prepared using erbium, chromium: Yttrium, scandium, gallium, garnet laser and bur and its clinical implications.

Science.gov (United States)

Verma, Mahesh; Kumari, Pooja; Gupta, Rekha; Gill, Shubhra; Gupta, Ankur

2015-01-01

Erbium, chromium: Yttrium, scandium, gallium, garnet (Er, Cr: YSGG) laser has been successfully used in the ablation of dental hard and soft tissues. It has been reported that this system is also useful for preparing tooth surfaces and etching, but no consensus exist in the literature regarding the advantage of lasers over conventional tooth preparation technique. Labial surfaces of 25 extracted human maxillary central incisors were divided into two halves. Right half was prepared with diamond bur and left half with Er, Cr; YSGG laser and a reduction of 0.3-0.5 mm was carried out. Topography of prepared surfaces of five teeth were examined under scanning electron microscope (SEM). The remaining samples were divided into 4 groups of 10 specimens each based on the surface treatment received: One group was acid etched and other was nonetched. Composite resin cylinders were bonded on prepared surfaces and shear bond strength was assessed using a universal testing machine. The SEM observation revealed that the laser prepared surfaces were clean, highly irregular and devoid of a smear layer. Bur prepared surfaces were relatively smooth but covered with smear layer. Highest bond strength was shown by laser prepared acid etched group, followed by bur prepared the acid etched group. The bur prepared nonacid etched group showed least bond strength. Er, Cr: YSGG laser can be used for preparing tooth and bond strength value achieved by laser preparation alone without surface treatment procedure lies in the range of clinical acceptability.

Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

Science.gov (United States)

Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

2018-02-01

Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

Dry etching for microelectronics

CERN Document Server

Powell, RA

1984-01-01

This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

Microfabrication in free-standing gallium nitride using UV laser micromachining

International Nuclear Information System (INIS)

Gu, E.; Howard, H.; Conneely, A.; O'Connor, G.M.; Illy, E.K.; Knowles, M.R.H.; Edwards, P.R.; Martin, R.W.; Watson, I.M.; Dawson, M.D.

2006-01-01

Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable. However, these materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high-resolution processing for these materials is increasingly important. In this paper, we report the fabrication of microstructures in free-standing GaN using pulsed UV lasers. An effective method was first developed to remove the re-deposited materials due to the laser machining. In order to achieve controllable machining and high resolution in GaN, machining parameters were carefully optimised. Under the optimised conditions, precision features such as holes (through holes, blind or tapered holes) on a tens of micrometer length scale have been machined. To fabricate micro-trenches in GaN with vertical sidewalls and a flat bottom, different process strategies of laser machining were tested and optimised. Using this technique, we have successfully fabricated high-quality micro-trenches in free-standing GaN with various widths and depths. The approach combining UV laser micromachining and other processes is also discussed. Our results demonstrate that the pulsed UV laser is a powerful tool for fabricating precision microstructures and devices in gallium nitride

Light propagation studies on laser modified waveguides using scanning near-field optical microscopy

DEFF Research Database (Denmark)

Borrise, X.; Berini, Abadal Gabriel; Jimenez, D.

2001-01-01

By means of direct laser writing on Al, a new method to locally modify optical waveguides is proposed. This technique has been applied to silicon nitride waveguides, allowing modifications of the optical propagation along the guide. To study the formed structures, a scanning near-held optical mic...

Wavelength tunable ultrafast fiber laser via reflective mirror with taper structure.

Science.gov (United States)

Fang, Li; Huang, Chuyun; Liu, Ting; Gogneau, Noelle; Bourhis, Eric; Gierak, Jacques; Oudar, Jean-Louis

2016-12-20

Laser sources with a controllable flexible wavelength have found widespread applications in optical fiber communication, optical sensing, and microscopy. Here, we report a tunable mode-locked fiber laser using a graphene-based saturable absorber and a tapered mirror as an end mirror in the cavity. The phase layer in the mirror is precisely etched by focused ion beam (FIB) milling technology, and the resonant wavelength of the mirror shifts correspond to the different etch depths. By scanning the tapered mirror mechanically, the center wavelength of a mode-locked fiber laser can be continuously tuned from 1562 to 1532 nm, with a pulse width in the sub-ps level and repetition rate of 27 MHz.

Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

NARCIS (Netherlands)

Abdalla, A.I.; Feilzer, A.J.

2008-01-01

Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

Scanning electron microscopy evaluation of the interaction pattern between dentin and resin after cavity preparation using Er:YAG laser

International Nuclear Information System (INIS)

Schein, Marcelo Thome

2001-01-01

The aim of this study was to describe the interaction pattern formed between dentin and resin on cavities prepared with an erbium laser (Er:YAG). The morphological aspect of the irradiated dentin after acid etching was also observed. Ten dentin disks were obtained from fresh extracted third molars. Each disk received two cavities, one prepared with a conventional high-speed drill, while the other cavity was obtained by the use of an Er:YAG laser (KaVo KEY Laser, KaVo Co.). The laser treatment was performed with 250 mJ/pulse, 4 Hz, non contact mode, focused beam, and a fine water mist was used. Five disks were prepared for morphological analysis of the acid etched dentin. The other five disks had their cavities restored with Single Bond (3M) followed by Z100 resin (3M). The specimens were observed under scanning electron microscopy after dentin-resin interface demineralization and deproteinization. It was observed that the morphological characteristics of the acid-etched irradiated dentin were not favorable to the diffusion of monomers through the collagen network. The dentin resin interfacial aspect of irradiated dentin, after acid etching, showed thin tags and scarce hybridization zones, which agreed with the morphology of the irradiated and acid-etched dentin substrate observed. (author)

Interaction of CO2 laser-modified nylon with osteoblast cells in relation to wettability

International Nuclear Information System (INIS)

Waugh, D.G.; Lawrence, J.; Morgan, D.J.; Thomas, C.L.

2009-01-01

It has been amply demonstrated previously that CO 2 lasers hold the ability to surface modify various polymers. In addition, it has been observed that these surface enhancements can augment the biomimetic nature of the laser irradiated materials. This research has employed a CO 2 laser marker to produce trench and hatch topographical patterns with peak heights of around 1 μm on the surface of nylon 6,6. The patterns generated have been analysed using white light interferometry, optical microscopy and X-ray photoelectron spectroscopy was employed to determine the surface oxygen content. Contact angle measurements were used to characterize each sample in terms of wettability. Generally, it was seen that as a result of laser processing the contact angle, surface roughness and surface oxygen content increased whilst the apparent polar and total surface energies decreased. The increase in contact angle and reduction in surface energy components was found to be on account of a mixed intermediate state wetting regime owing to the change in roughness due to the induced topographical patterns. To determine the biomimetic nature of the modified and as-received control samples each one was seeded with 2 x 10 4 cells/ml normal human osteoblast cells and observed after periods of 24 h and 4 days using optical microscopy and SEM to determine mean cell cover densities and variations in cell morphology. In addition, a haemocytometer was used to show that the cell count for the laser patterned samples had increased by up to a factor of 1.5 compared to the as-received control sample after 4 days of incubation. Significantly, it was determined that all laser-induced patterns gave rise to better cell response in comparison to the as-received control sample studied due to increased preferential cell growth on those surfaces with increased surface roughness.

Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

Directory of Open Access Journals (Sweden)

Ana Paula Morales Cobra Carvalho

2009-06-01

Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

Laser Spot Tracking Based on Modified Circular Hough Transform and Motion Pattern Analysis

Science.gov (United States)

Krstinić, Damir; Skelin, Ana Kuzmanić; Milatić, Ivan

2014-01-01

Laser pointers are one of the most widely used interactive and pointing devices in different human-computer interaction systems. Existing approaches to vision-based laser spot tracking are designed for controlled indoor environments with the main assumption that the laser spot is very bright, if not the brightest, spot in images. In this work, we are interested in developing a method for an outdoor, open-space environment, which could be implemented on embedded devices with limited computational resources. Under these circumstances, none of the assumptions of existing methods for laser spot tracking can be applied, yet a novel and fast method with robust performance is required. Throughout the paper, we will propose and evaluate an efficient method based on modified circular Hough transform and Lucas–Kanade motion analysis. Encouraging results on a representative dataset demonstrate the potential of our method in an uncontrolled outdoor environment, while achieving maximal accuracy indoors. Our dataset and ground truth data are made publicly available for further development. PMID:25350502

Laser spot tracking based on modified circular Hough transform and motion pattern analysis.

Science.gov (United States)

Krstinić, Damir; Skelin, Ana Kuzmanić; Milatić, Ivan

2014-10-27

Laser pointers are one of the most widely used interactive and pointing devices in different human-computer interaction systems. Existing approaches to vision-based laser spot tracking are designed for controlled indoor environments with the main assumption that the laser spot is very bright, if not the brightest, spot in images. In this work, we are interested in developing a method for an outdoor, open-space environment, which could be implemented on embedded devices with limited computational resources. Under these circumstances, none of the assumptions of existing methods for laser spot tracking can be applied, yet a novel and fast method with robust performance is required. Throughout the paper, we will propose and evaluate an efficient method based on modified circular Hough transform and Lucas-Kanade motion analysis. Encouraging results on a representative dataset demonstrate the potential of our method in an uncontrolled outdoor environment, while achieving maximal accuracy indoors. Our dataset and ground truth data are made publicly available for further development.

Laser in operative dentistry

Directory of Open Access Journals (Sweden)

E. Yasini

1994-06-01

Full Text Available Today laser has a lot of usage in medicine and dentistry. In the field of dentistry, laser is used in soft tissue surgery, sterilization of canals (in root canal therapy and in restorative dentistry laser is used for cavity preparation, caries removal, sealing the grooves (in preventive dentistry, etching enamel and dentin, composite polymerization and removal of tooth sensitivity. The use of Co2 lasers and Nd: YAG for cavity preparation, due to creating high heat causes darkness and cracks around the region of laser radiation. Also due to high temperature of these lasers, pulp damage is inevitable. So today, by using the Excimer laser especially the argon floride type with a wavelength of 193 nm, the problem of heat stress have been solved, but the use of lasers in dentistry, especially for cavity preparation needs more researches and evaluations.

A InGaN/GaN quantum dot green (λ=524 nm) laser

KAUST Repository

Zhang, Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

2011-01-01

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching

Plasma etching of electrospun polymeric nanofibres

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

2006-10-25

Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

Neutron-induced modifications on Hostaphan and Makrofol wettability and etching behaviors

International Nuclear Information System (INIS)

El-Sayed, D.; El-Saftawy, A.A.; Abd El Aal, S.A.; Fayez-Hassan, M.; Al-Abyad, M.; Mansour, N.A.; Seddik, U.

2017-01-01

Understanding the nature of polymers used as nuclear detectors is crucial to enhance their behaviors. In this work, the induced modifications in wettability and etching properties of Hostaphan and Makrofol polymers irradiated by different fluences of thermal neutrons are investigated. The wetting properties are studied by contact angle technique which showed the spread out of various liquids over the irradiated polymers surfaces (wettability enhanced). This wetting behavior is attributed to the induced changes in surface free energy (SFE), morphology, roughness, structure, hardness, and chemistry. SFE values are calculated by three different models and found to increase after neutrons irradiation associated with differences depending on the used model. These differences result from the intermolecular interactions in the liquid/polymer system. Surface morphology and roughness of both polymers showed drastic changes after irradiation. Additionally, surface structure and hardness of pristine and irradiated polymers were discussed and correlated to the surface wettability improvements. The changes in surface chemistry are examined by Fourier transform infrared spectroscopy (FTIR), which indicate an increase in surface polarity due to the formation of polar groups. The irradiated polymers etching characteristics and activation energies are discussed as well. Lastly, it is evident that thermal neutrons show efficiency in improving surface wettability and etching properties of Hostaphan and Makrofol in a controlled way. - Highlights: • Neutrons radiation used to modify Hostaphan and Makrofol polymer wetting behavior. • Tailoring surface structure, topography and chemistry control its wettability. • Bulk etching rate and activation energy improved after neutrons irradiation.

Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

Science.gov (United States)

Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

2016-06-01

A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

Science.gov (United States)

Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2017-10-01

To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

Comparison of Enamel Morphologic Characteristics after Conditioning with Various Combinations of Acid Etchant and Er:YAG Laser in Bonding and Rebonding Procedures: A SEM Analysis

Directory of Open Access Journals (Sweden)

Mohammad Sadegh Ahmad Akhoundi

2017-10-01

Full Text Available Objectives: Many studies have evaluated re-etched enamel by using scanning electron microscopy (SEM; however, there is no evidence regarding the use of Erbium-doped yttrium aluminium garnet (Er:YAG laser at primary and secondary bonding instead of acid etching with regards to enamel surface changes. The purpose of the present study was to determine that whether or not the methods of primary and secondary enamel preparation affect enamel characteristics after rebonding, by using SEM analysis.Materials and Methods: Twelve freshly extracted premolars were divided into 4 groups. The samples in each group were conditioned by acid etchant or Er:YAG laser at primary conditioning, according to the instructions. Afterwards, they were bonded with orthodontic brackets. After debonding, the samples were prepared for second conditioning. Also, two samples were conditioned only once with acid etchant or laser, to compare enamel morphology changes with those after re-etching. Finally, buccal enamel surfaces were evaluated using SEM.Results: Enamel etching patterns were observed in the samples which had been acid-conditioned at first or at both conditionings. The samples irradiated by Er:YAG laser showed amorphous and irregular surfaces, with no signs of typical etching patterns. A large deep gap was seen in one of the samples irradiated with laser at primary and secondary conditionings, which might have penetrated the underling layers of enamel and dentin.Conclusions: Enamel surface preparation with Er:YAG laser produces irregular and indistinct morphologic changes, completely different from those produced after acid etching at both conditioning and reconditioning. Therefore, it is recommended to use this laser with caution to avoid permanent enamel damage.

Etching Behavior of Aluminum Alloy Extrusions

Science.gov (United States)

Zhu, Hanliang

2014-11-01

The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

Polymers designed for laser ablation-influence of photochemical properties

International Nuclear Information System (INIS)

Lippert, T.; Dickinson, J.T.; Hauer, M.; Kopitkovas, G.; Langford, S.C.; Masuhara, H.; Nuyken, O.; Robert, J.; Salmio, H.; Tada, T.; Tomita, K.; Wokaun, A.

2002-01-01

The ablation characteristics of various polymers were studied at low and high fluences. The polymers can be divided into three groups, i.e. polymers containing triazene and ester groups, the same polymers without the triazene group, and polyimide as reference polymer. At high fluences similar ablation parameters, i.e. etch rates and effective absorption coefficients, were obtained for all polymers. The main difference is the absence of carbon deposits for the designed polymers. At low fluences (at 308 nm) very pronounced differences are detected. The polymers containing the photochemically most active group (triazene) exhibit the lowest threshold of ablation (as low as 25 mJ cm -2 ) and the highest etch rates (up to 3 μm/pulse), followed by the designed polyesters and then polyimide. The laser-induced decomposition of the designed polymers was studied by nanosecond-interferometry. Only the triazene-polymer reveals etching without any sign of surface swelling, which is observed for all other polymers. The etching of the triazene-polymer starts and ends with the laser pulse, clearly indicating photochemical etching. The triazene-polymer was also studied by time-of-flight mass spectrometry (TOF-MS). The intensities of the ablation fragments show pronounced differences between irradiation at the absorption band of the triazene group (308 nm) and irradiation at a shorter wavelength (248 nm)

Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

Science.gov (United States)

Amirov, I. I.; Gorlachev, E. S.; Mazaletskiy, L. A.; Izyumov, M. O.; Alov, N. V.

2018-03-01

In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.

Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

Science.gov (United States)

Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

2014-08-01

Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

Science.gov (United States)

Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

Copper-assisted, anti-reflection etching of silicon surfaces

Science.gov (United States)

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Effects of Different Combinations of Er:YAG Laser-Adhesives on Enamel Demineralization and Bracket Bond Strength.

Science.gov (United States)

Çokakoğlu, Serpil; Nalçacı, Ruhi; Üşümez, Serdar; Malkoç, Sıddık

2016-04-01

The purpose of this study was to investigate the demineralization around brackets and shear bond strength (SBS) of brackets bonded to Er:YAG laser-irradiated enamel at different power settings with various adhesive systems combinations. A total of 108 premolar teeth were used in this study. Teeth were assigned into three groups according to the etching procedure, then each group divided into three subgroups based on the application of different adhesive systems. There were a total of nine groups as follows. Group 1: Acid + Transbond XT Primer; group 2: Er:YAG (100 mJ, 10 Hz) etching + Transbond XT Primer; group 3: Er:YAG (200 mJ, 10 Hz) etching + Transbond XT Primer; group 4: Transbond Plus self-etching primer (SEP); group 5: Er:YAG (100 mJ, 10 Hz) etching + Transbond Plus SEP; group 6: Er:YAG (200 mJ, 10 Hz) etching + Transbond Plus SEP; group 7: Clearfil Protect Bond; group 8: Er:YAG (100 mJ, 10 Hz) etching + Clearfil Protect Bond; group 9: Er:YAG (200 mJ, 10 Hz) etching + Clearfil Protect Bond. Brackets were bonded with Transbond XT Adhesive Paste in all groups. Teeth to be evaluated for demineralization and SBS were exposed to pH and thermal cyclings, respectively. Then, demineralization samples were scanned with micro-CT to determine lesion depth values. For SBS test, a universal testing machine was used and adhesive remnant was index scored after debonding. Data were analyzed statistically. No significant differences were found among the lesion depth values of the various groups, except for G7 and G8, in which the lowest values were recorded. The lowest SBS values were in G7, whereas the highest were in G9. The differences between the other groups were not significant. Er:YAG laser did not have a positive effect on prevention of enamel demineralization. When two step self-etch adhesive is preferred for bonding brackets, laser etching at 1 W (100 mJ, 10 Hz) is suggested to improve SBS of brackets.

Extremely superhydrophobic surfaces with micro- and nanostructures fabricated by copper catalytic etching.

Science.gov (United States)

Lee, Jung-Pil; Choi, Sinho; Park, Soojin

2011-01-18

We demonstrate a simple method for the fabrication of rough silicon surfaces with micro- and nanostructures, which exhibited superhydrophobic behaviors. Hierarchically rough silicon surfaces were prepared by copper (Cu)-assisted chemical etching process where Cu nanoparticles having particle size of 10-30 nm were deposited on silicon surface, depending on the period of time of electroless Cu plating. Surface roughness was controlled by both the size of Cu nanoparticles and etching conditions. As-synthesized rough silicon surfaces showed water contact angles ranging from 93° to 149°. Moreover, the hierarchically rough silicon surfaces were chemically modified by spin-coating of a thin layer of Teflon precursor with low surface energy. And thus it exhibited nonsticky and enhanced hydrophobic properties with extremely high contact angle of nearly 180°.

Plasma etching: Yesterday, today, and tomorrow

Energy Technology Data Exchange (ETDEWEB)

Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

2013-09-15

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

Plasma etching: Yesterday, today, and tomorrow

International Nuclear Information System (INIS)

Donnelly, Vincent M.; Kornblit, Avinoam

2013-01-01

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

[Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

Science.gov (United States)

Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

2009-03-01

To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

Mode selection laser

DEFF Research Database (Denmark)

2014-01-01

spatial reflector variations, may be combined to generate a laser beam containing a plurality of orthogonal modes. The laser beam may be injected into a few- mode optical fiber, e.g. for the purpose of optical communication. The VCSEL may have intra-cavity contacts (31,37) and a Tunnel junction (33......) for current confinement into the active layer (34). An air-gap layer (102) may be provided between the upper reflector (15) and the SOI wafer (50) acting as a substrate. The lower reflector may be designed as a high-contrast grating (51) by etching....

A study of laser surface treatment in bonded repair of composite aircraft structures.

Science.gov (United States)

Li, Shaolong; Sun, Ting; Liu, Chang; Yang, Wenfeng; Tang, Qingru

2018-03-01

Surface pre-treatment is one of the key processes in bonded repair of aircraft carbon fibre reinforced polymer composites. This paper investigates the surface modification of physical and chemical properties by laser ablation and conventional polish treatment techniques. Surface morphology analysed by laser scanning confocal microscopy and scanning electron microscopy showed that a laser-treated surface displayed higher roughness than that of a polish-treated specimen. The laser-treated laminate exhibited more functional groups in the form of O 1 s/C 1 s atomic ratio of 30.89% for laser-treated and 20.14% for polish-treated as evidenced by X-ray photoelectron spectroscopy observation. Contact angle goniometry demonstrated that laser treatment can provide increased surface free energy and wettability. In the light of mechanical interlocking, molecular bonding and thermodynamics theories on adhesion, laser etching process displayed enhanced bonding performance relative to the polishing surface treatment. These properties resulted in an increased single lap shear strength and a cohesive failure mode for laser etching while an adhesive failure mode occurred in polish-treated specimen.

Substrate and coating defect planarization strategies for high-laser-fluence multilayer mirrors

International Nuclear Information System (INIS)

Stolz, Christopher J.; Wolfe, Justin E.; Mirkarimi, Paul B.; Folta, James A.; Adams, John J.; Menor, Marlon G.; Teslich, Nick E.; Soufli, Regina; Menoni, Carmen S.; Patel, Dinesh

2015-01-01

Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm 2 laser resistance for single-shot testing and 50 J/cm 2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated

Laser pulse, initial stress and modified Ohm's law in micropolar thermoelasticity with microtemperatures

Science.gov (United States)

Othman, Mohamed I. A.; Tantawi, Ramadan S.; Hilal, Mohamed I. M.

2018-03-01

The present manuscript studies the effect of the initial stress in micropolar magneto-thermoelasticity with microtemperatures heated by a laser pulse. The modified Ohm's law illustrates the temperature gradient and the charge density effects in the governing equations of the studied problem. The used analytical method was the normal modes. The physical quantities are established numerically and represented graphically.

Shear bond strength and SEM morphology evaluation of different dental adhesives to enamel prepared with ER:YAG laser.

Science.gov (United States)

Pires, Patrícia T; Ferreira, João C; Oliveira, Sofia A; Azevedo, Alvaro F; Dias, Walter R; Melo, Paulo R

2013-01-01

Early observations of enamel surfaces prepared by erbium lasers motivated clinicians to use laser as an alternative to chemical etching. Evaluate shear bond strength (SBS) values of different dental adhesives on Erbium:Yttrium Aluminum Garnet (Er:YAG) laser prepared enamel and to evaluate possible etching patterns correlations between dental adhesives and SBS values. One hundred bovine incisors were randomly assigned to SBS tests on enamel (n = 15) and to enamel morphology analysis (n = 5) after Er:YAG laser preparation as follows: Group I - 37% phosphoric acid (PA)+ ExciTE(®); Group II - ExciTE(®); Group III - AdheSE(®) self-etching; Group IV - FuturaBond(®) no-rinse. NR; Group V - Xeno(®) V. Teeth were treated with the adhesive systems and subjected to thermal cycling. SBS were performed in a universal testing machine at 5 mm/min. One-way ANOVA and post-hoc tests (P adhesive systems yielded significantly different SBSs. Acid etching significantly increased the adhesion in laser treated enamel. No differences in SBS values were obtained between AdheSE(®) and ExciTE(®) without condition with PA. FuturaBond(®) NR and Xeno(®) V showed similar SBS, which was lower in comparison to the others adhesives. No correlation between enamel surface morphology and SBS values was observed, except when PA was used.

STUDY ON THE EFFECTS OF ACID ETCHING ON AFFECTED ENAMEL

Directory of Open Access Journals (Sweden)

Simona Stoleriu

2011-12-01

Full Text Available The purpose of the study was to establish and compare the effects of ortophosphoric and hydrochloric acids on the enamel affected by incipient carious lesions with different evolution. Materials and method. 20 teeth with acute and chronic non-cavitary carious lesions were considered for the study. The teeth were sectioned in two halves through the middle of the non-cavitary lesions. The halves of 5 white spot-type lesions and of 5 brown spot-type ones were analyzed as to their surface roughness, on an atomic force microscope (AFM. 5 halves with white spot-type lesions and 5 halves with brown spot-type ones were subjected to acid etching with 37% ortophosphoric acid (Scotchbond etchant gel, 3M ESPE, and an equal number of samples was subjected to the action of 15% hydrochloric acid (ICON-etch, DMG Dental Products Ltd for 2 min, then washed with water and analyzed by AFM. Results. The initial surface roughness of the enamel was higher in the white spot–type carious lesions, comparatively with the brown spot-type ones. For both types of carious non-cavitary lesions, acid etching with phosphoric and hydrochloric acid significantly increased the surface roughness of the enamel, comparatively with the status of the enamel surface prior to etching. The hydrochloric acid led to a surface roughness significantly higher than in the case of ortophosphoric acid, in both acute and chronic non-cavitary carious lesions. The roughness values obtained through etching with ortophosphoric and hydrochloric acid were higher in the white spot-type carious lesions, comparatively with the brown spot-type ones. Conclusions. Both the 37% ortophosphoric acid and the 15% hydrochloric acid determined a significantly higher surface roughness of the enamel affected by acute and chronic non-cavitary carious lesions. The surface condition of the brown spot-type carious lesions was less significantly modified, comparatively with that of the white spot-type lesions, by the

The chemical and electrochemical anisotropic etching of silicon

International Nuclear Information System (INIS)

Dixon, E.

1997-06-01

The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

Plasma etching of niobium-SiO/sub x/ layers

International Nuclear Information System (INIS)

Schelle, D.; Tiller, H.J.

1986-01-01

CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

Science.gov (United States)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

Energy Technology Data Exchange (ETDEWEB)

Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

2014-08-01

Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

Personnel neutron dosimetry applications of track-size distributions on electrochemically etched CR-39 foils

International Nuclear Information System (INIS)

Hankins, D.E.; Homann, S.G.; Westermark, J.

1988-01-01

The track-size distribution on electrochemically etched CR-39 foils can be used to obtain some limited information on the incident neutron spectra. Track-size distributions on CR-39 foils can also be used to determine if the tracks were caused by neutrons or if they are merely background tracks (which have a significantly different track-size distribution). Identifying and discarding the high-background foils reduces the number of foils that must be etched. This also lowers the detection limit of the dosimetry system. We have developed an image analyzer program that can more efficiently determine the track density and track-size distribution, as well as read the laser-cut identification numbers on each foil. This new image analyzer makes the routine application of track-size distributions on CR-39 foils feasible. 2 refs., 3 figs

Detailed microstructure analysis of as-deposited and etched porous ZnO films

International Nuclear Information System (INIS)

Shang, Congcong; Thimont, Yohann; Barnabé, Antoine; Presmanes, Lionel; Pasquet, Isabelle; Tailhades, Philippe

2015-01-01

Graphical abstract: - Highlights: • Porous ZnO thin films were deposited by rf magnetron sputtering. • Surface enhancement factors were deduced from geometrical considerations. • Enlargement of the inter-grain spaces have been achieved by HCl chemical etching. • Microstructural parameters were deduced from SEM, AFM and optical measurements. - Abstract: ZnO nanostructured materials in thin film forms are of particular interest for photovoltaic or photocatalysis processes but they suffer from a lack of simple methods for optimizing their microstructure. We have demonstrated that microporous ZnO thin films with optimized inter grain accessibility can be produce by radio frequency magnetron sputtering process and chemical etching with 2.75 mM HCl solution for different duration. The as-deposited ZnO thin films were first characterized in terms of structure, grain size, inter grain space, open cavity depth and total thickness of the film by XRD, AFM, SEM, profilometry and optical measurements. A specific attention was dedicated to the determination of the surface enhancement factor (SEF) by using basic geometrical considerations and images treatments. In addition, the porous fraction and its distribution in the thickness have been estimated thanks to the optical simulation of the experimental UV–Visible–IR spectrums using the Bruggeman dielectric model and cross section SEM images analysis respectively. This study showed that the microstructure of the as-deposited films consists of a dense layer covered by a porous upper layer developing a SEF of 12–13 m 2 m −2 . This two layers architecture is not modified by the etching process. The etching process only affects the upper porous layer in which the overall porosity and the inter-grain space increase with the etching duration. Column diameter and total film thickness decrease at the same time when the films are soaked in the HCl bath. The microporous structure obtained after the etching process could

Characteristics of the Fiber Laser Sensor System Based on Etched-Bragg Grating Sensing Probe for Determination of the Low Nitrate Concentration in Water.

Science.gov (United States)

Pham, Thanh Binh; Bui, Huy; Le, Huu Thang; Pham, Van Hoi

2016-12-22

The necessity of environmental protection has stimulated the development of many kinds of methods allowing the determination of different pollutants in the natural environment, including methods for determining nitrate in source water. In this paper, the characteristics of an etched fiber Bragg grating (e-FBG) sensing probe-which integrated in fiber laser structure-are studied by numerical simulation and experiment. The proposed sensor is demonstrated for determination of the low nitrate concentration in a water environment. Experimental results show that this sensor could determine nitrate in water samples at a low concentration range of 0-80 ppm with good repeatability, rapid response, and average sensitivity of 3.5 × 10 -3 nm/ppm with the detection limit of 3 ppm. The e-FBG sensing probe integrated in fiber laser demonstrates many advantages, such as a high resolution for wavelength shift identification, high optical signal-to-noise ratio (OSNR of 40 dB), narrow bandwidth of 0.02 nm that enhanced accuracy and precision of wavelength peak measurement, and capability for optical remote sensing. The obtained results suggested that the proposed e-FBG sensor has a large potential for the determination of low nitrate concentrations in water in outdoor field work.

Characteristics of the Fiber Laser Sensor System Based on Etched-Bragg Grating Sensing Probe for Determination of the Low Nitrate Concentration in Water

Directory of Open Access Journals (Sweden)

Thanh Binh Pham

2016-12-01

Full Text Available The necessity of environmental protection has stimulated the development of many kinds of methods allowing the determination of different pollutants in the natural environment, including methods for determining nitrate in source water. In this paper, the characteristics of an etched fiber Bragg grating (e-FBG sensing probe—which integrated in fiber laser structure—are studied by numerical simulation and experiment. The proposed sensor is demonstrated for determination of the low nitrate concentration in a water environment. Experimental results show that this sensor could determine nitrate in water samples at a low concentration range of 0–80 ppm with good repeatability, rapid response, and average sensitivity of 3.5 × 10−3 nm/ppm with the detection limit of 3 ppm. The e-FBG sensing probe integrated in fiber laser demonstrates many advantages, such as a high resolution for wavelength shift identification, high optical signal-to-noise ratio (OSNR of 40 dB, narrow bandwidth of 0.02 nm that enhanced accuracy and precision of wavelength peak measurement, and capability for optical remote sensing. The obtained results suggested that the proposed e-FBG sensor has a large potential for the determination of low nitrate concentrations in water in outdoor field work.

Thermal effects from modified endodontic laser tips used in the apical third of root canals with erbium-doped yttrium aluminium garnet and erbium, chromium-doped yttrium scandium gallium garnet lasers.

Science.gov (United States)

George, Roy; Walsh, Laurence J

2010-04-01

To evaluate the temperature changes occurring on the apical third of root surfaces when erbium-doped yttrium aluminium garnet (Er:YAG) and erbium, chromium-doped yttrium scandium gallium garnet (Er,Cr:YSGG) laser energy was delivered with a tube etched, laterally emitting conical tip and a conventional bare design optical fiber tip. Thermal effects of root canal laser treatments on periodontal ligament cells and alveolar bone are of concern in terms of safety. A total of 64 single-rooted extracted teeth were prepared 1 mm short of the working length using rotary nickel-titanium Pro-Taper files to an apical size corresponding to a F5 Pro-Taper instrument. A thermocouple located 2 mm from the apex was used to record temperature changes arising from delivery of laser energy through laterally emitting conical tips or plain tips, using an Er:YAG or Er,Cr:YSGG laser. For the Er:YAG and Er,Cr:YSGG systems, conical fibers showed greater lateral emissions (452 + 69% and 443 + 64%) and corresponding lower forward emissions (48 + 5% and 49 + 5%) than conventional plain-fiber tips. All four combinations of laser system and fiber design elicited temperature increases less than 2.5 degrees C during lasing. The use of water irrigation attenuated completely the thermal effects of individual lasing cycles. Laterally emitting conical fiber tips can be used safely under defined conditions for intracanal irradiation without harmful thermal effects on the periodontal apparatus.

Novel Hierarchical Micro/Nano Modified Surfaces for Dental Implants

Directory of Open Access Journals (Sweden)

Gabriela STRNAD

2018-06-01

Full Text Available Present paper presents the modification at nano scale level of the surfaces of Ti6Al4V alloy that were previously modified at micro scale level by acid etching (AE or by sand blasting with large grit and acid etching (SLA. Continuous, self-ordered nanostructured (nanoporous/nanotubular oxide layers superimposed onto micro rough topographies were developed by using electrochemical anodization in fluoride based solutions, and optimized process parameters. Novel hierarchical micro/nano modified surfaces, with well developed oxide nanotubes of 40-110 nm in diameter, were synthesis by anodization in 1M H3PO4 + 0.4 wt% HF electrolyte, at anodization potential of 24 V, applied with a potential ramp of 0.08 V/s.

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

Science.gov (United States)

Evans, Laura J.; Beheim, Glenn M.

2006-01-01

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed

2014-07-29

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Silicon germanium mask for deep silicon etching

KAUST Repository

Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

2014-01-01

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

Science.gov (United States)

Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

Optical diagnostics for plasma etching

NARCIS (Netherlands)

Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

1985-01-01

Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

Microstructures evolution and physical properties of laser induced NbC modified nanocrystalline composites

Science.gov (United States)

Li, Jianing; Liu, Kegao; Yuan, Xingdong; Shan, Feihu; Zhang, Bolun; Wang, Zhe; Xu, Wenzhuo; Zhang, Zheng; An, Xiangchen

2017-10-01

The nanoscale quasicrystals (NQs), amorphous and ultrafine nanocrystals (UNs) modified hard composites are produced by laser cladding (LC) of the Ni60A-TiC-NbC-Sb mixed powders on the additive manufacturing (AM) TA1 titanium alloy. The LC technique is favorable to formations of icosahedral quasicrystals (I-phase) with five-fold symmetry due to its rapid cooling and solidification characteristics. The formation mechanism of this I-phase is explained here. Under the actions of NQs, amorphous and UNs, such LC composites exhibited an extremely high micro-hardness. UNs may also intertwin with amorphous, forming yarn-shape materials. This research provides essential theoretical basis to improve the quality of laser-treated composites.

Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

Directory of Open Access Journals (Sweden)

Devanna Raghu

2008-01-01

Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

Bulk and track etching of PET studied by spectrophotometer

International Nuclear Information System (INIS)

Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

2004-01-01

UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

Investigation of Cutting Quality of Remote DOE Laser Cutting in 0.5 mm Stainless Steel

Science.gov (United States)

Villumsen, Sigurd Lazic; Kristiansen, Morten

It has previously been shown that the stability of the remote fusion cutting (RFC) process can be increased by modifying the intensity profile of the laser by means of a diffractive optical element (DOE). This paper investigates the quality of remote DOE cutting (RDC) conducted with a 3 kW single mode fiber laser in 0.5 mm stainless steel. An automatic measurement system is used to investigate how the travel speed, focus offset and angle of incidence effect the kerf width and kerf variance. The study shows that the RDC process has a very low kerf width variance, and that the kerf width decreases with cutting speed. Furthermore, selected etched samples show a significant increase in the perpendicularity of the cuts when compared to RFC. Also, on average, the depth of the layer of molten material for RFC is 83% deeper than for RDC.

MBE System for Antimonide Based Semiconductor Lasers

National Research Council Canada - National Science Library

Lester, Luke

1999-01-01

.... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

Science.gov (United States)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

OpenAIRE

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted ...

Mass spectrometry analysis of etch products from CR-39 plastic irradiated by heavy ions

Science.gov (United States)

Kodaira, S.; Nanjo, D.; Kawashima, H.; Yasuda, N.; Konishi, T.; Kurano, M.; Kitamura, H.; Uchihori, Y.; Naka, S.; Ota, S.; Ideguchi, Y.; Hasebe, N.; Mori, Y.; Yamauchi, T.

2012-09-01

As a feasibility study, gas chromatography-mass spectrometry (GC-MS) and matrix-assisted laser desorption ionization-mass spectrometry (MALDI-MS) have been applied to analyze etch products of CR-39 plastic (one of the most frequently used solid states nuclear track detector) for the understanding of track formation and etching mechanisms by heavy ion irradiation. The etch products of irradiated CR-39 dissolved in sodium hydroxide solution (NaOH) contain radiation-induced fragments. For the GC-MS analysis, we found peaks of diethylene glycol (DEG) and a small but a definitive peak of ethylene glycol (EG) in the etch products from CR-39 irradiated by 60 MeV N ion beams. The etch products of unirradiated CR-39 showed a clear peak of DEG, but no other significant peaks were found. DEG is known to be released from the CR-39 molecule as a fragment by alkaline hydrolysis reaction of the polymer. We postulate that EG was formed as a result of the breaking of the ether bond (C-O-C) of the DEG part of the CR-39 polymer by the irradiation. The mass distribution of polyallylalcohol was obtained from the etch products from irradiated and unirradiated CR-39 samples by MALDI-MS analysis. Polyallylalcohol, with the repeating mass interval of m/z = 58 Da (dalton) between m/z = 800 and 3500, was expected to be produced from CR-39 by alkaline hydrolysis. We used IAA as a matrix to assist the ionization of organic analyte in MALDI-MS analysis and found that peaks from IAA covered mass spectrum in the lower m/z region making difficult to identify CR-39 fragment peaks which were also be seen in the same region. The mass spectrometry analysis using GC-MS and MALDI-MS will be powerful tools to investigate the radiation-induced polymeric fragments and helping to understand the track formation mechanism in CR-39 by heavy ions.

An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

Science.gov (United States)

Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

2012-01-01

Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

MR-Guided Laser-Induced Thermotherapy of the Infratemporal Fossa and Orbit in Malignant Chondrosarcoma via a Modified Technique

International Nuclear Information System (INIS)

Vogl, Thomas J.; Mack, Martin G.; Straub, Ralf; Eichler, Katrin; Zangos, Stephan

2001-01-01

A 76-year-old patient presented with a recurrent mass of a malignant chondrosarcoma in the right infratemporal fossa and in the left maxillary sinus with orbital invasion. The patient was treated with a palliative intention with MR-guided laser-induced thermotherapy using a modified applicator technique. Following treatment clinical symptoms improved and MRI revealed complete laser-induced tumor necrosis

Modifying thin film diamond for electronic applications

International Nuclear Information System (INIS)

Baral, B.

1999-01-01

The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

Reactive ion etching of microphotonic structures

International Nuclear Information System (INIS)

Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

2004-01-01

Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

Science.gov (United States)

Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

2017-08-01

The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

SU-8 etching in inductively coupled oxygen plasma

DEFF Research Database (Denmark)

Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

2013-01-01

Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

UV laser-assisted fabrication of ridge waveguides in lithium niobate crystals

OpenAIRE

Sones, C.L.; Ying, C.Y.J.; Eason, R.W.; Mailis, S.; Ganguly, P.; Soergel, E.

2010-01-01

We present a UV laser-assisted method for the fabrication of ridge waveguides in lithium niobate. The UV laser irradiation step provides the refractive index change required for the vertical light confinement in the waveguide and also defines the ferroelectric domain pattern which produces the ridge structures after chemical etching.

Bond strengths of brackets bonded to enamel surfaces conditioned with femtosecond and Er:YAG laser systems.

Science.gov (United States)

Aglarci, Cahide; Demir, Necla; Aksakalli, Sertac; Dilber, Erhan; Sozer, Ozlem Akinci; Kilic, Hamdi Sukur

2016-08-01

The aim of this study was to compare femtosecond and Er:YAG laser systems with regard to enamel demineralization and bracket bond strength. Human-extracted premolars were randomized to three groups (n = 17) depending on the conditioning treatment used for the buccal surfaces: 37 % orthophosphoric acid, Er:YAG laser etching (MSP mode 120 mJ, 10 Hz, 1.2 W), and femtosecond laser etching (0.4 W, 800 nm, 90 fs/pulse, 1 kHz). Metal brackets were bonded with Transbond XT to the conditioned surfaces and light cured for 20 s. The samples were thermocycled (5000 cycles, 5-55 °C) and subjected to shear bond strength (SBS) testing using a universal testing machine. Failure types were analyzed under an optical stereomicroscope and SEM. The adhesive remnant index (ARI) was evaluated to assess residual adhesive on the enamel surface. The results revealed no significant differences in SBS between the Er:YAG laser (7.2 ± 3.3 MPa) and acid etching groups (7.3 ± 2.7 MPa; p enamel interface.

Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

Energy Technology Data Exchange (ETDEWEB)

Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

2016-09-01

A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

International Nuclear Information System (INIS)

Grégoire, Geneviève; Sharrock, Patrick; Prigent, Yann

2016-01-01

A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

Modeling of the angular dependence of plasma etching

International Nuclear Information System (INIS)

Guo Wei; Sawin, Herbert H.

2009-01-01

An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

High-resolution study of photoinduced modification in fused silica produced by a tightly focused femtosecond laser beam in the presence of aberrations

International Nuclear Information System (INIS)

Hnatovsky, C.; Taylor, R.S.; Simova, E.; Bhardwaj, V.R.; Rayner, D.M.; Corkum, P.B.

2005-01-01

An ultrahigh-resolution (20 nm) technique of selective chemical etching and atomic force microscopy has been used to study the photoinduced modification in fused silica produced at various depths by tightly focused femtosecond laser radiation affected by spherical aberration. We demonstrate that shapes of the irradiated zones near the threshold for modification can be predicted by taking proper account of spherical aberration caused by the refractive index mismatched air-silica interface. We establish a depth dependence of the pulse energy required to initiate modification and characterize the relationship between numerical aperture of the writing lens and practically achievable writing depth. We also show that spatial characteristics of the laser-modified zones can be controlled by a specially designed focusing system which allows correction for a variable amount of spherical aberration

Real-time depth monitoring and control of laser machining through scanning beam delivery system

International Nuclear Information System (INIS)

Ji, Yang; Grindal, Alexander W; Fraser, James M; Webster, Paul J L

2015-01-01

Scanning optics enable many laser applications in manufacturing because their low inertia allows rapid movement of the process beam across the sample. We describe our method of inline coherent imaging for real-time (up to 230 kHz) micron-scale (7–8 µm axial resolution) tracking and control of laser machining depth through a scanning galvo-telecentric beam delivery system. For 1 cm trench etching in stainless steel, we collect high speed intrapulse and interpulse morphology which is useful for further understanding underlying mechanisms or comparison with numerical models. We also collect overall sweep-to-sweep depth penetration which can be used for feedback depth control. For trench etching in silicon, we show the relationship of etch rate with average power and scan speed by computer processing of depth information without destructive sample post-processing. We also achieve three-dimensional infrared continuous wave (modulated) laser machining of a 3.96 × 3.96 × 0.5 mm 3 (length × width × maximum depth) pattern on steel with depth feedback. To the best of our knowledge, this is the first successful demonstration of direct real-time depth monitoring and control of laser machining with scanning optics. (paper)

Effects of the Addictives on Etching Characteristics of Aluminum Foil

Energy Technology Data Exchange (ETDEWEB)

Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

2001-01-01

The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

Ion-beam etching of ramps in thin film heterostructures

International Nuclear Information System (INIS)

Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

2002-01-01

Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

Science.gov (United States)

Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

2015-01-01

The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

Directional Etching of Silicon by Silver Nanostructures

Science.gov (United States)

Sharma, Pradeep; Wang, Yuh-Lin

2011-02-01

We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

Science.gov (United States)

Gray, David C.

1992-01-01

A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14

Optimization of silver-assisted nano-pillar etching process in silicon

Science.gov (United States)

Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

2015-12-01

In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

Laser investigation of the non-uniformity of fluorescent species in dental enamel

Science.gov (United States)

Tran, Stephanie U.; Ridge, Jeremy S.; Nelson, Leonard Y.; Seibel, Eric J.

In the present study, artificial type I and type II erosions were created on dental specimen using acetic acid and EDTA respectively. Specimens were prepared by etching extracted teeth samples in acid to varying degrees, after which the absolute fluorescence intensity ratio of the etched enamel relative to sound enamel was recorded for each specimen using 405 and 532 nm laser excitation. Results showed differences in the fluorescence ratio of etched to sound enamel for type I and II erosions. These findings suggest a non-uniform distribution of fluorescent species in the interprismatic region as compared to the prismatic region.

Cold laser machining of nickel-yttrium stabilised zirconia cermets: Composition dependence

International Nuclear Information System (INIS)

Sola, D.; Gurauskis, J.; Pena, J.I.; Orera, V.M.

2009-01-01

Cold laser micromachining efficiency in nickel-yttrium stabilised zirconia cermets was studied as a function of cermet composition. Nickel oxide-yttrium stabilised zirconia ceramic plates obtained via tape casting technique were machined using 8-25 ns pulses of a Nd: YAG laser at the fixed wavelength of 1.064 μm and a frequency of 1 kHz. The morphology of the holes, etched volume, drill diameter, shape and depth were evaluated as a function of the processing parameters such as pulse irradiance and of the initial composition. The laser drilling mechanism was evaluated in terms of laser-material interaction parameters such as beam absorptivity, material spallation and the impact on the overall process discussed. By varying the nickel oxide content of the composite the optical absorption (-value is greatly modified and significantly affected the drilling efficiency of the green state ceramic substrates and the morphology of the holes. Higher depth values and improved drilled volume upto 0.2 mm 3 per pulse were obtained for substrates with higher optical transparency (lower optical absorption value). In addition, a laser beam self-focussing effect is observed for the compositions with less nickel oxide content. Holes with average diameter from 60 μm to 110 μm and upto 1 mm in depth were drilled with a high rate of 40 ms per hole while the final microstructure of the cermet obtained by reduction of the nickel oxide-yttrium stabilised zirconia composites remained unchanged.

Resonant ablation of single-wall carbon nanotubes by femtosecond laser pulses

International Nuclear Information System (INIS)

Arutyunyan, N R; Komlenok, M S; Kononenko, V V; Pashinin, V P; Pozharov, A S; Konov, V I; Obraztsova, E D

2015-01-01

The thin 50 nm film of bundled arc-discharge single-wall carbon nanotubes was irradiated by femtosecond laser pulses with wavelengths 675, 1350 and 1745 nm corresponding to the absorption band of metallic nanotubes E 11 M , to the background absorption and to the absorption band of semiconducting nanotubes E 11 S , respectively. The aim was to induce a selective removal of nanotubes of specific type from the bundled material. Similar to conducted thermal heating experiments, the effect of laser irradiation results in suppression of all radial breathing modes in the Raman spectra, with preferential destruction of the metallic nanotubes with diameters less than 1.26 nm and of the semiconducting nanotubes with diameters 1.36 nm. However, the etching rate of different nanotubes depends on the wavelength of the laser irradiation. It is demonstrated that the relative content of nanotubes of different chiralities can be tuned by a resonant laser ablation of undesired nanotube fraction. The preferential etching of the resonant nanotubes has been shown for laser wavelengths 675 nm (E 11 M ) and 1745 nm (E 11 S ). (paper)

Influence factors on etching rate of PET nuclear pore membrane

International Nuclear Information System (INIS)

Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

2014-01-01

Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

Optimization of silver-assisted nano-pillar etching process in silicon

International Nuclear Information System (INIS)

Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

2015-01-01

Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert ® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H 2 O 2 ), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H 2 O 2 concentration and etching time. The predicted model is in good agreement with the experimental data where R 2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time

Optimization of silver-assisted nano-pillar etching process in silicon

Energy Technology Data Exchange (ETDEWEB)

Azhari, Ayu Wazira, E-mail: ayuwazira@unimap.edu.my [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); School of Environmental Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); Desa, Mohd Khairunaz Mat [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, 14300 (Malaysia); Zaidi, Saleem H. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia)

2015-12-01

Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert{sup ®} software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H{sub 2}O{sub 2}), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H{sub 2}O{sub 2} concentration and etching time. The predicted model is in good agreement with the experimental data where R{sup 2} is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Properties of the ablation process for excimer laser ablation of Y1Ba2Cu3O7

International Nuclear Information System (INIS)

Neifeld, R.A.; Potenziani, E.; Sinclair, W.R.; Hill III, W.T.; Turner, B.; Pinkas, A.

1991-01-01

The process of excimer laser ablation has been studied while varying the laser fluence from 0.237 to 19.1 J/cm 2 . Ion time-of-flight, total charge, target etch depth per pulse, and etch volume per pulse have been measured. Results indicate a maximum ablation volume and minimum ionization fraction occur near 5 J/cm 2 . Several of the parameters measured vary rapidly in the 1--5 J/cm 2 range. Variation in these parameters strongly influences the properties of films grown by this technique

Modified Laser Flash Method for Thermal Properties Measurements and the Influence of Heat Convection

Science.gov (United States)

Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalia N.; Su, Ching-Hua; Lehoczky, Sandor L.

2003-01-01

The study examined the effect of natural convection in applying the modified laser flash method to measure thermal properties of semiconductor melts. Common laser flash method uses a laser pulse to heat one side of a thin circular sample and measures the temperature response of the other side. Thermal diffusivity can be calculations based on a heat conduction analysis. For semiconductor melt, the sample is contained in a specially designed quartz cell with optical windows on both sides. When laser heats the vertical melt surface, the resulting natural convection can introduce errors in calculation based on heat conduction model alone. The effect of natural convection was studied by CFD simulations with experimental verification by temperature measurement. The CFD results indicated that natural convection would decrease the time needed for the rear side to reach its peak temperature, and also decrease the peak temperature slightly in our experimental configuration. Using the experimental data, the calculation using only heat conduction model resulted in a thermal diffusivity value is about 7.7% lower than that from the model with natural convection. Specific heat capacity was about the same, and the difference is within 1.6%, regardless of heat transfer models.

3D memory: etch is the new litho

Science.gov (United States)

Petti, Christopher

2018-03-01

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

International Nuclear Information System (INIS)

Kim, D.Y.; Ko, J.H.; Park, M.S.; Lee, N.-E.

2008-01-01

Under certain conditions during ITO etching using CH 4 /H 2 /Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

Si etching with reactive neutral beams of very low energy

Energy Technology Data Exchange (ETDEWEB)

Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

2014-12-14

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

Laser dentistry: A new application of excimer laser in root canal therapy

International Nuclear Information System (INIS)

Pini, R.; Salimbeni, R.; Vannini, M.; Barone, R.; Clauser, C.

1989-01-01

We report the first study of the application of excimer lasers in dentistry for the treatment of dental root canals. High-energy ultraviolet (UV) radiation emitted by an XeCl excimer laser (308 nm) and delivered through suitable optical fibers can be used to remove residual organic tissue from the canals. To this aim, UV ablation thresholds of dental tissues have been measured, showing a preferential etching of infiltrated dentin in respect to healthy dentin, at laser fluences of 0.5-1.5 J/cm 2 . This technique has been tested on extracted tooth samples, simulating a clinical procedure. Fibers of decreasing core diameters have been used to treat different sections of the root canal down to its apical portion, resulting in an effective, easy, and fast cleaning action. Possible advantages of excimer laser clinical applications in respect to usual procedures are also discussed

Integration of image exposure time into a modified laser speckle imaging method

Energy Technology Data Exchange (ETDEWEB)

RamIrez-San-Juan, J C; Salazar-Hermenegildo, N; Ramos-Garcia, R; Munoz-Lopez, J [Optics Department, INAOE, Puebla (Mexico); Huang, Y C [Department of Electrical Engineering and Computer Science, University of California, Irvine, CA (United States); Choi, B, E-mail: jcram@inaoep.m [Beckman Laser Institute and Medical Clinic, University of California, Irvine, CA (United States)

2010-11-21

Speckle-based methods have been developed to characterize tissue blood flow and perfusion. One such method, called modified laser speckle imaging (mLSI), enables computation of blood flow maps with relatively high spatial resolution. Although it is known that the sensitivity and noise in LSI measurements depend on image exposure time, a fundamental disadvantage of mLSI is that it does not take into account this parameter. In this work, we integrate the exposure time into the mLSI method and provide experimental support of our approach with measurements from an in vitro flow phantom.

Integration of image exposure time into a modified laser speckle imaging method

International Nuclear Information System (INIS)

RamIrez-San-Juan, J C; Salazar-Hermenegildo, N; Ramos-Garcia, R; Munoz-Lopez, J; Huang, Y C; Choi, B

2010-01-01

Speckle-based methods have been developed to characterize tissue blood flow and perfusion. One such method, called modified laser speckle imaging (mLSI), enables computation of blood flow maps with relatively high spatial resolution. Although it is known that the sensitivity and noise in LSI measurements depend on image exposure time, a fundamental disadvantage of mLSI is that it does not take into account this parameter. In this work, we integrate the exposure time into the mLSI method and provide experimental support of our approach with measurements from an in vitro flow phantom.

Plasma/Neutral-Beam Etching Apparatus

Science.gov (United States)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

Science.gov (United States)

MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

2012-02-17

The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

Performance of a new one-step multi-mode adhesive on etched vs non-etched enamel on bond strength and interfacial morphology.

Science.gov (United States)

de Goes, Mario Fernando; Shinohara, Mirela Sanae; Freitas, Marcela Santiago

2014-06-01

To compare microtensile bond strength (μTBS) and interfacial morphology of a new one-step multimode adhesive with a two-step self-etching adhesive and two etch-and-rinse adhesives systems on enamel. Thirty human third molars were sectioned to obtain two enamel fragments. For μTBS, 48 enamel surfaces were ground using 600-grit SiC paper and randomly assigned into 6 groups (n = 8): nonetched Scotchbond Universal [SBU]; etched SBU [SBU-et]; non-etched Clearfil SE Bond [CSE]; etched CSE [CSE-et]; Scotchbond Multi-PURPOSE [SBMP]; Excite [EX]. The etched specimens were conditioned with 37% phosphoric acid for 30 s, each adhesive system was applied according to manufacturers' instructions, and composite resin blocks (Filtek Supreme Plus, 3M ESPE) were incrementally built up. Specimens were sectioned into beams with a cross-sectional area of 0.8-mm2 and tested under tension (1 mm/min). The data were analyzed with oneway ANOVA and Fisher's PLSD (α = 0.05). For interface analysis, two samples from each group were embedded in epoxy resin, polished, and then observed using scanning electron microscopy (SEM). The μTBS values (in MPa) and the standard deviations were: SBU = 27.4 (8.5); SBU-et = 33.6 (9.3); CSE = 28.5 (8.3); CSE-et = 34.2 (9.0); SBMP = 30.4 (11.0); EX = 23.3 (8.2). CSE-et and SBU-et presented the highest bond strength values, followed by SBMP, CSE, and SBU which did not differ significantly from each other. EX showed the statistically significantly lowest bond strength values. SEM images of interfaces from etched samples showed long adhesive-resin tags penetrating into demineralized enamel. Preliminary etching of enamel significantly increased bond strength for the new one-step multimode adhesive SBU and two-step self-etching adhesive CSE.

Target fabrication using laser and spark erosion machining

International Nuclear Information System (INIS)

Clement, X.; Coudeville, A.; Eyharts, P.; Perrine, J.P.; Rouillard, R.

1982-01-01

Fabrication of laser fusion targets requires a number of special techniques. We have developed both laser and spark erosion machining to produce minute parts of complex targets. A high repetition rate YAG laser at double frequency is used to etch various materials. For example, marks or patterns are often necessary on structured or advanced targets. The laser is also used to thin down plastic coated stalks. A spark erosion system has proved to be a versatile tool and we describe current fabrication processes like cutting, drilling, and ultra precise machining. Spark erosion has interesting features for target fabrication: it is a highly controllable and reproducible technique as well as relatively inexpensive

Comparative study of resist stabilization techniques for metal etch processing

Science.gov (United States)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Effects of etching time on enamel bond strengths.

Science.gov (United States)

Triolo, P T; Swift, E J; Mudgil, A; Levine, A

1993-12-01

This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

High-Density Plasma-Induced Etch Damage of GaN

International Nuclear Information System (INIS)

Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

1999-01-01

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

Particle precipitation in connection with KOH etching of silicon

DEFF Research Database (Denmark)

Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

2004-01-01

This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

Influence of water storage on fatigue strength of self-etch adhesives.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2015-12-01

The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

Features of copper etching in chlorine-argon plasma

International Nuclear Information System (INIS)

Efremov, A.M.; Svettsov, V.I.

1995-01-01

Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

Neutron dosimetry using electrochemical etching

International Nuclear Information System (INIS)

Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

1977-01-01

Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

Total analysis systems with Thermochromic Etching Discs technology.

Science.gov (United States)

Avella-Oliver, Miquel; Morais, Sergi; Carrascosa, Javier; Puchades, Rosa; Maquieira, Ángel

2014-12-16

A new analytical system based on Thermochromic Etching Discs (TED) technology is presented. TED comprises a number of attractive features such as track independency, selective irradiation, a high power laser, and the capability to create useful assay platforms. The analytical versatility of this tool opens up a wide range of possibilities to design new compact disc-based total analysis systems applicable in chemistry and life sciences. In this paper, TED analytical implementation is described and discussed, and their analytical potential is supported by several applications. Microarray immunoassay, immunofiltration assay, solution measurement, and cell culture approaches are herein addressed in order to demonstrate the practical capacity of this system. The analytical usefulness of TED technology is herein demonstrated, describing how to exploit this tool for developing truly integrated analytical systems that provide solutions within the point of care framework.

Electronegativity-dependent tin etching from thin films

Energy Technology Data Exchange (ETDEWEB)

Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

2016-07-15

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

The effect of additional enamel etching and a flowable composite to the interfacial integrity of Class II adhesive composite restorations.

Science.gov (United States)

Belli, S; Inokoshi, S; Ozer, F; Pereira, P N; Ogata, M; Tagami, J

2001-01-01

This in vitro study evaluated the interfacial integrity of Class II resin composite restorations. The influence of a flowable composite and additional enamel etching was also evaluated. Deep, saucer-shaped Class II cavities were prepared in the mesial and distal proximal surfaces of 25 extracted human molars and assigned to five treatment groups. The gingival margins were extended to approximately 1 mm above the CEJ in 40 cavities and below the CEJ in 10 cavities. The prepared cavities were then restored with a self-etching primer system (Clearfil Liner Bond II) and a hybrid resin composite (Clearfil AP-X), with and without a flowable composite (Protect Liner F) and additional enamel etching with 37% phosphoric acid gel (K-etchant). After finishing, polishing and thermocycling (4 and 60 degrees C, x300), the samples were longitudinally sectioned through the restorations and resin-tooth interfaces were observed directly under a laser scanning microscope. Statistical analysis indicated that the use of a flowable composite produced significantly more (p = 0.04) gap-free resin-dentin interfaces than teeth restored without the flowable composite. However, both flowable composite and enamel etching could not prevent gap formation at enamel-resin interfaces and crack formation on enamel walls.

Multispot fiber laser welding

DEFF Research Database (Denmark)

Schutt Hansen, Klaus

This dissertation presents work and results achieved in the field of multi beam fiber laser welding. The project has had a practical approach, in which simulations and modelling have been kept at a minimum. Different methods to produce spot patterns with high power single mode fiber lasers have...... been examined and evaluated. It is found that both diamond turned DOE’s in zinc sulphide and multilevel etched DOE’s (Diffractive Optical Elements) in fused silica have a good performance. Welding with multiple beams in a butt joint configuration has been tested. Results are presented, showing it has...... been possible to control the welding width in incremental steps by adding more beams in a row. The laser power was used to independently control the keyhole and consequently the depth of fusion. An example of inline repair of a laser weld in butt joint configuration was examined. Zinc powder was placed...

Laser ablation of hard tissue: correlation between the laser beam parameters and the post-ablative tissue characteristics

Science.gov (United States)

Serafetinides, Alexandros A.; Makropoulou, Mersini I.; Khabbaz, Maruan

2003-11-01

Hard dental tissue laser applications, such as preventive treatment, laser diagnosis of caries, laser etching of enamel, laser decay removal and cavity preparation, and more recently use of the laser light to enlarge the root canal during the endodontic therapy, have been investigated for in vitro and in vivo applications. Post-ablative surface characteristics, e.g. degree of charring, cracks and other surface deformation, can be evaluated using scanning electron microscopy. The experimental data are discussed in relevance with the laser beam characteristics, e.g. pulse duration, beam profile, and the beam delivery systems employed. Techniques based on the laser illumination of the dental tissues and the subsequent evaluation of the scattered fluorescent light will be a valuable tool in early diagnosis of tooth diseases, as carious dentin or enamel. The laser induced autofluorescence signal of healthy dentin is much stronger than that of the carious dentin. However, a better understanding of the transmission patterns of laser light in teeth, for both diagnosis and therapy is needed, before the laser procedures can be used in a clinical environment.

Influence of copper foil polycrystalline structure on graphene anisotropic etching

Energy Technology Data Exchange (ETDEWEB)

Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2017-01-30

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Influence of copper foil polycrystalline structure on graphene anisotropic etching

International Nuclear Information System (INIS)

Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

2017-01-01

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Effect of Er,Cr:YSGG laser on the microtensile bond strength of two different adhesives to the sound and caries-affected dentin.

Science.gov (United States)

Ergücü, Z; Celik, E U; Unlü, N; Türkün, M; Ozer, F

2009-01-01

This study examined the effect of Er,Cr:YSGG laser irradiation on the microtensile bond strength (microTBS) of a three-step etch-and-rinse and a two-step self-etch adhesive to sound and caries-affected dentin. Sixteen freshly extracted human molars with occlusal dentin caries were used. The caries lesion was removed by one of the following methods: conventional treatment with burs or Er,Cr:YSGG laser (Waterlase MD, Biolase). The adhesive systems (AdheSE, Ivoclar Vivadent and Scotchbond Multi Purpose, 3M ESPE) were applied to the entire tooth surface according to the manufacturers' instructions. Resin composites were applied to the adhesive-treated dentin surfaces and light-cured. Each tooth was sectioned into multiple beams with the "non-trimming" version of the microtensile test. The specimens were subjected to microtensile forces (BISCO Microtensile Tester, BISCO). The data was analyzed by three-way ANOVA and independent t-tests (p=0.05). Er,Cr:YSGG laser irradiation exhibited similar microTBS values compared to that of conventional bur treatment, regardless of the adhesive system and type of treated dentin. The self-etch system revealed lower microTBS values, both with conventional and laser treatment techniques, compared to the etch-and-rinse adhesive in sound and caries-affected dentin (padhesive systems to sound and caries-affected dentin.

Q-switched Nd: YAG laser alone or with modified Jessner chemical peeling for treatment of mixed melasma in dark skin types: A comparative clinical, histopathological, and immunohistochemical study.

Science.gov (United States)

Saleh, Fatma; Moftah, Noha H; Abdel-Azim, Eman; Gharieb, Marwa G

2017-10-22

Treatment of mixed melasma remains challenging. Promising results have been achieved with low-fluence 1064-nm Q-switched Nd-YAG laser; however, multiple sessions are necessary with occurrence of complications especially in dark skin types. So, combination methods may be recommended. To compare efficacy of Q-switched Nd-YAG laser alone or with modified Jessner's peel in mixed melasma in dark skin. Nineteen patients with mixed melasma received 6 sessions of laser on left side of face and alternating laser and modified Jessner on right side. Evaluation was carried out clinically through modified melasma area and severity index at 1 month after last session. Using histopathological, immunohistochemical, and computerized morphometric analysis, objective evaluation of melanin particle surface area and MART-1-positive cells was performed for pre- and post-treated skin biopsies. There was significant clinical improvement on both sides of face (P  .05). At the sixth laser session on left side of face, ill-defined mottled hypopigmentation was observed in 21.05% of patients. Histopathologically, melanin particle surface area and number of MART-1-positive cells (total, epidermal, and dermal) were significantly decreased after two treatment modalities (P  .05). Low-fluence Q-switched Nd-YAG laser alone and with modified Jessner's peel are equally effective regimens for mixed melasma clinically, histopathologically, and immunohistochemically. However, combined method is preferred, especially in dark skin, for obtaining better cosmetic result with fewer side effects of multiple laser sessions and decreasing cost rate of laser. © 2017 Wiley Periodicals, Inc.

Fabrication of beta-PVDF membranes by track etching and specific functionalization of nano-pores

International Nuclear Information System (INIS)

Cuscito, O.

2008-01-01

Poly(vinylidene fluoride)(β-PVDF) nano-porous membranes were made by chemical revealing of tracks induced from swift heavy ions irradiation. Pore opening and radii can be varied in a controllable manner with the etching time. nano-pores size in nano-meter scale (from 12 nm to 50 nm) appears to be linearly dependent to the etching time. It was then necessary to adapt the characterization tools to these membranes. Consequently, we resorted to the use of structural analysis methods (Scanning Electron Microscopy, Small Angle Neutron Scattering) and developed evaluation methods of the membranes transport properties like gas permeation and ionic diffusion. Results obtained confirm the pores opening (break through) and the hydrophobicity of material, which we have modified with hydrophilic molecules. In this precise case, the grafting of acrylic acid was initiated by the radicals still remains after track-etching (called radio-grafting). This key result was obtained by a study of Electron Paramagnetic Resonance. The labelling of introduced chemical functionalities with fluorescent probes was a very effective mean to visualize very few amounts of molecules by confocal microscopy. The radio-grafting was found specifically localized inside etched tracks. The protocol offers the possibility to create a double functionality, the one localized inside the nano-pores and the other on the surface of membranes. The modification of radio-grafting parameters (the acrylic acid concentration, solvent nature, use of transfer agent) and the chemical properties of the nano-pore walls have a direct incidence on the transport properties. (author) [fr

Development of deep silicon plasma etching for 3D integration technology

Directory of Open Access Journals (Sweden)

Golishnikov А. А.

2014-02-01

Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

Exploration of suitable dry etch technologies for directed self-assembly

Science.gov (United States)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Photolithography-free laser-patterned HF acid-resistant chromium-polyimide mask for rapid fabrication of microfluidic systems in glass

International Nuclear Information System (INIS)

Zamuruyev, Konstantin O; Zrodnikov, Yuriy; Davis, Cristina E

2017-01-01

Excellent chemical and physical properties of glass, over a range of operating conditions, make it a preferred material for chemical detection systems in analytical chemistry, biology, and the environmental sciences. However, it is often compromised with SU8, PDMS, or Parylene materials due to the sophisticated mask preparation requirements for wet etching of glass. Here, we report our efforts toward developing a photolithography-free laser-patterned hydrofluoric acid-resistant chromium-polyimide tape mask for rapid prototyping of microfluidic systems in glass. The patterns are defined in masking layer with a diode-pumped solid-state laser. Minimum feature size is limited to the diameter of the laser beam, 30 µ m; minimum spacing between features is limited by the thermal shrinkage and adhesive contact of the polyimide tape to 40 µ m. The patterned glass substrates are etched in 49% hydrofluoric acid at ambient temperature with soft agitation (in time increments, up to 60 min duration). In spite of the simplicity, our method demonstrates comparable results to the other current more sophisticated masking methods in terms of the etched depth (up to 300 µ m in borosilicate glass), feature under etch ratio in isotropic etch (∼1.36), and low mask hole density. The method demonstrates high yield and reliability. To our knowledge, this method is the first proposed technique for rapid prototyping of microfluidic systems in glass with such high performance parameters. The proposed method of fabrication can potentially be implemented in research institutions without access to a standard clean-room facility. (paper)

Dry etch challenges for CD shrinkage in memory process

Science.gov (United States)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Development and application of the electrochemical etching technique. Annual progress report

International Nuclear Information System (INIS)

1979-08-01

This report documents advances in the development and application of the electrochemical etching technique for thermal and epithermal neutron dosimetry as well as track geometry determinations. The bulk and track etching rates were studied by evaluating the track geometry during electrochemical etching. The foil surface removed versus etching time for two different etchants at 1000 V, 2 kHz, and 22 0 C were studied. Results indicated that the bulk etching rates were constant for the two etchants, i.e. 45% KOH and 45% KOH mixed with an equal volume of C 2 H 5 OH 5 and were equal to 0.20 +- 0.14 μm/hr and 2.7 +- 0.27 μm/hr from each side of the foil. The track etching rate (as contrasted with the bulk etching rate) can be determined by the microscope focus at various depths. The increase of track depth values as a function of etching time for the two etchants are plotted. The track cone angles were determined and found to be much larger for electrochemically etched polycarbonate foils than for most plastics etched with passive chemical techniques

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Optical-fiber strain sensors with asymmetric etched structures.

Science.gov (United States)

Vaziri, M; Chen, C L

1993-11-01

Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

International Nuclear Information System (INIS)

Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

2004-01-01

Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

Energy Technology Data Exchange (ETDEWEB)

Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

2014-05-12

A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

The mechanism of selective corrugation removal by KOH anisotropic wet etching

International Nuclear Information System (INIS)

Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

2010-01-01

The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate

In vitro extracellular recording and stimulation performance of nanoporous gold-modified multi-electrode arrays.

Science.gov (United States)

Kim, Yong Hee; Kim, Gook Hwa; Kim, Ah Young; Han, Young Hwan; Chung, Myung-Ae; Jung, Sang-Don

2015-12-01

Nanoporous gold (Au) structures can reduce the impedance and enhance the charge injection capability of multi-electrode arrays (MEAs) used for interfacing neuronal networks. Even though there are various nanoporous Au preparation techniques, fabrication of MEA based on low-cost electro-codeposition of Ag:Au has not been performed. In this work, we have modified a Au MEA via the electro-codeposition of Ag:Au alloy, followed by the chemical etching of Ag, and report on the in vitro extracellular recording and stimulation performance of the nanoporous Au-modified MEA. Ag:Au alloy was electro-codeposited on a bilayer lift-off resist sputter-deposition passivated Au MEA followed by chemical etching of Ag to form a porous Au structure. The porous Au structure was analyzed by scanning electron microscopy and tunneling electron microscopy and found to have an interconnected nanoporous Au structure. The impedance value of the nanoporous Au-modified MEA is 15.4 ± 0.55 kΩ at 1 kHz, accompanied by the base noise V rms of 2.4 ± 0.3 μV. The charge injection limit of the nanoporous Au-modified electrode estimated from voltage transient measurement is approximately 1 mC cm(-2), which is comparable to roughened platinum and carbon nanotube electrodes. The charge injection capability of the nanoporous Au-modified MEA was confirmed by observing stimulus-induced spikes at above 0.2 V. The nanoporous Au-modified MEA showed mechanical durability upon ultrasonic treatment for up to an hour. Electro-codeposition of Ag:Au alloy combined with chemical etching Ag is a low-cost process for fabricating nanoporous Au-modified MEA suitable for establishing the stimulus-response relationship of cultured neuronal networks.

In vitro extracellular recording and stimulation performance of nanoporous gold-modified multi-electrode arrays

Science.gov (United States)

Kim, Yong Hee; Kim, Gook Hwa; Kim, Ah Young; Han, Young Hwan; Chung, Myung-Ae; Jung, Sang-Don

2015-12-01

Objective. Nanoporous gold (Au) structures can reduce the impedance and enhance the charge injection capability of multi-electrode arrays (MEAs) used for interfacing neuronal networks. Even though there are various nanoporous Au preparation techniques, fabrication of MEA based on low-cost electro-codeposition of Ag:Au has not been performed. In this work, we have modified a Au MEA via the electro-codeposition of Ag:Au alloy, followed by the chemical etching of Ag, and report on the in vitro extracellular recording and stimulation performance of the nanoporous Au-modified MEA. Approach. Ag:Au alloy was electro-codeposited on a bilayer lift-off resist sputter-deposition passivated Au MEA followed by chemical etching of Ag to form a porous Au structure. Main results. The porous Au structure was analyzed by scanning electron microscopy and tunneling electron microscopy and found to have an interconnected nanoporous Au structure. The impedance value of the nanoporous Au-modified MEA is 15.4 ± 0.55 kΩ at 1 kHz, accompanied by the base noise V rms of 2.4 ± 0.3 μV. The charge injection limit of the nanoporous Au-modified electrode estimated from voltage transient measurement is approximately 1 mC cm-2, which is comparable to roughened platinum and carbon nanotube electrodes. The charge injection capability of the nanoporous Au-modified MEA was confirmed by observing stimulus-induced spikes at above 0.2 V. The nanoporous Au-modified MEA showed mechanical durability upon ultrasonic treatment for up to an hour. Significance. Electro-codeposition of Ag:Au alloy combined with chemical etching Ag is a low-cost process for fabricating nanoporous Au-modified MEA suitable for establishing the stimulus-response relationship of cultured neuronal networks.

Site-controlled fabrication of silicon nanotips by indentation-induced selective etching

Science.gov (United States)

Jin, Chenning; Yu, Bingjun; Liu, Xiaoxiao; Xiao, Chen; Wang, Hongbo; Jiang, Shulan; Wu, Jiang; Liu, Huiyun; Qian, Linmao

2017-12-01

In the present study, the indentation-induced selective etching approach is proposed to fabricate site-controlled pyramidal nanotips on Si(100) surface. Without any masks, the site-controlled nanofabrication can be realized by nanoindentation and post etching in potassium hydroxide (KOH) solution. The effect of indentation force and etching time on the formation of pyramidal nanotips was investigated. It is found that the height and radius of the pyramidal nanotips increase with the indentation force or etching time, while long-time etching can lead to the collapse of the tips. The formation of pyramidal tips is ascribed to the anisotropic etching of silicon and etching stop of (111) crystal planes in KOH aqueous solution. The capability of this fabrication method was further demonstrated by producing various tip arrays on silicon surface by selective etching of the site-controlled indent patterns, and the maximum height difference of these tips is less than 10 nm. The indentation-induced selective etching provides a new strategy to fabricate well site-controlled tip arrays for multi-probe SPM system, Si nanostructure-based sensors and high-quality information storage.

Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

International Nuclear Information System (INIS)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

2016-01-01

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

Selective dry etching of silicon containing anti-reflective coating

Science.gov (United States)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

Pulsed-laser-deposited YBCO thin films using modified MTG processed targets

CERN Document Server

Kim, C H; Kim, I T; Hahn, T S

1999-01-01

YBCO thin films were deposited by pulsed laser deposition from targets fabricated using the modified melt-textured growth (MTG) method and the solid-state sintering (SSS) method. All of the films showed c-axis orientations, but the films from the MTG targets had better crystallinity than those from the SSS targets. As the substrate temperature was increased, T sub c and J sub c of the films increased. The films from the MTG targets showed better superconducting properties than those from the SSS targets. From the composition analysis of the targets, the Y-richer vapor species arriving at the substrate from the MTG targets are thought to form a thermodynamically more stable YBCO phase with less cation disorder.

Etching patterns on the micro‐ and nanoscale

DEFF Research Database (Denmark)

Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

2014-01-01

‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

Plasma etching a ceramic composite. [evaluating microstructure

Science.gov (United States)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

Etch characteristics of BCB film using inductively coupled plasma

International Nuclear Information System (INIS)

Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

2003-01-01

The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

In vitro mesenchymal stem cell response to a CO{sub 2} laser modified polymeric material

Energy Technology Data Exchange (ETDEWEB)

Waugh, D.G., E-mail: d.waugh@chester.ac.uk [Laser Engineering and Manufacturing Research Centre, Faculty of Science and Engineering, University of Chester, Chester CH1 4BJ (United Kingdom); Hussain, I. [School of Life Sciences, Brayford Pool, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Lawrence, J.; Smith, G.C. [Laser Engineering and Manufacturing Research Centre, Faculty of Science and Engineering, University of Chester, Chester CH1 4BJ (United Kingdom); Cosgrove, D. [School of Life Sciences, Brayford Pool, University of Lincoln, Lincoln LN6 7TS (United Kingdom); Toccaceli, C. [Laser Engineering and Manufacturing Research Centre, Faculty of Science and Engineering, University of Chester, Chester CH1 4BJ (United Kingdom)

2016-10-01

With an ageing world population it is becoming significantly apparent that there is a need to produce implants and platforms to manipulate stem cell growth on a pharmaceutical scale. This is needed to meet the socio-economic demands of many countries worldwide. This paper details one of the first ever studies in to the manipulation of stem cell growth on CO{sub 2} laser surface treated nylon 6,6 highlighting its potential as an inexpensive platform to manipulate stem cell growth on a pharmaceutical scale. Through CO{sub 2} laser surface treatment discrete changes to the surfaces were made. That is, the surface roughness of the nylon 6,6 was increased by up to 4.3 μm, the contact angle was modulated by up to 5° and the surface oxygen content increased by up to 1 atom %. Following mesenchymal stem cell growth on the laser treated samples, it was identified that CO{sub 2} laser surface treatment gave rise to an enhanced response with an increase in viable cell count of up to 60,000 cells/ml when compared to the as-received sample. The effect of surface parameters modified by the CO{sub 2} laser surface treatment on the mesenchymal stem cell response is also discussed along with potential trends that could be identified to govern the mesenchymal stem cell response.

No-waiting dentine self-etch concept-Merit or hype.

Science.gov (United States)

Huang, Xue-Qing; Pucci, César R; Luo, Tao; Breschi, Lorenzo; Pashley, David H; Niu, Li-Na; Tay, Franklin R

2017-07-01

A recently-launched universal adhesive, G-Premio Bond, provides clinicians with the alternative to use the self-etch technique for bonding to dentine without waiting for the adhesive to interact with the bonding substrate (no-waiting self-etch; Japanese brochure), or after leaving the adhesive undisturbed for 10s (10-s self-etch; international brochure). The present study was performed to examine in vitro performance of this new universal adhesive bonded to human coronal dentine using the two alternative self-etch modes. One hundred and ten specimens were bonded using two self-etch application modes and examined with or without thermomechanical cycling (10,000 thermal cycles and 240,000 mechanical cycles) to simulate one year of intraoral functioning. The bonded specimens were sectioned for microtensile bond testing, ultrastructural and nanoleakage examination using transmission electron microscopy. Changes in the composition of mineralised dentine after adhesive application were examined using Fourier transform infrared spectroscopy. Both reduced application time and thermomechanical cycling resulted in significantly lower bond strengths, thinner hybrid layers, and significantly more extensive nanoleakage after thermomechanical cycling. Using the conventional 10-s application time improved bonding performance when compared with the no-waiting self-etch technique. Nevertheless, nanoleakage was generally extensive under all testing parameters employed for examining the adhesive. Although sufficient bond strength to dentine may be achieved using the present universal adhesive in the no-waiting self-etch mode that does not require clinicians to wait prior to polymerisation of the adhesive, this self-etch concept requires further technological refinement before it can be recommended as a clinical technique. Although the surge for cutting application time to increase user friendliness remains the most frequently sought conduit for advancement of dentine bonding

Discretely tunable micromachined injection-locked lasers

International Nuclear Information System (INIS)

Cai, H; Yu, M B; Lo, G Q; Kwong, D L; Zhang, X M; Liu, A Q; Liu, B

2010-01-01

This paper reports a micromachined injection-locked laser (ILL) to provide tunable discrete wavelengths. It utilizes a non-continuously tunable laser as the master to lock a Fabry–Pérot semiconductor laser chip. Both lasers are integrated into a deep-etched silicon chip with dimensions of 3 mm × 3 mm × 0.8 mm. Based on the experimental results, significant improvements in the optical power and spectral purity have been achieved in the fully locked state, and optical hysteresis and bistability have also been observed in response to the changes of the output wavelength and optical power of the master laser. As a whole system, the micromachined ILL is able to provide single mode, discrete wavelength tuning, high power and direct modulation with small size and single-chip solution, making it promising for advanced optical communications such as wavelength division multiplexing optical access networks.

What's new in dentine bonding? Self-etch adhesives.

Science.gov (United States)

Burke, F J Trevor

2004-12-01

Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

Etching radical controlled gas chopped deep reactive ion etching

Science.gov (United States)

Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

2013-10-01

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

Technique for etching monolayer and multilayer materials

Science.gov (United States)

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

Energy Technology Data Exchange (ETDEWEB)

Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

2017-07-15

Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.