Quantum model for mode locking in pulsed semiconductor quantum dots
Beugeling, W.; Uhrig, Götz S.; Anders, Frithjof B.
2016-12-01
Quantum dots in GaAs/InGaAs structures have been proposed as a candidate system for realizing quantum computing. The short coherence time of the electronic quantum state that arises from coupling to the nuclei of the substrate is dramatically increased if the system is subjected to a magnetic field and to repeated optical pulsing. This enhancement is due to mode locking: oscillation frequencies resonant with the pulsing frequencies are enhanced, while off-resonant oscillations eventually die out. Because the resonant frequencies are determined by the pulsing frequency only, the system becomes immune to frequency shifts caused by the nuclear coupling and by slight variations between individual quantum dots. The effects remain even after the optical pulsing is terminated. In this work, we explore the phenomenon of mode locking from a quantum mechanical perspective. We treat the dynamics using the central-spin model, which includes coupling to 10-20 nuclei and incoherent decay of the excited electronic state, in a perturbative framework. Using scaling arguments, we extrapolate our results to realistic system parameters. We estimate that the synchronization to the pulsing frequency needs time scales in the order of 1 s .
Modelling exciton–phonon interactions in optically driven quantum dots
DEFF Research Database (Denmark)
Nazir, Ahsan; McCutcheon, Dara
2016-01-01
We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...
Quantum-dot Semiconductor Optical Amplifiers in State Space Model
Institute of Scientific and Technical Information of China (English)
Hussein Taleb; Kambiz Abedi; Saeed Golmohammadi
2013-01-01
A state space model (SSM) is derived for quantum-dot semiconductor optical amplifiers (QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA's static and dynamic characteristics with high accuracy.
Single semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Michler, Peter (ed.) [Stuttgart Univ. (Germany). Inst. fuer Halbleiteroptik und Funktionelle Grenzflaechen
2009-07-01
This book reviews recent advances in the exciting and rapidly growing field of semiconductor quantum dots via contributions from some of the most prominent researchers in the scientific community. Special focus is given to optical, quantum optical, and spin properties of single quantum dots due to their potential applications in devices operating with single electron spins and/or single photons. This includes single and coupled quantum dots in external fields, cavity-quantum electrodynamics, and single and entangled photon pair generation. Single Semiconductor Quantum Dots also addresses growth techniques to allow for a positioned nucleation of dots as well as applications of quantum dots in quantum information technologies. (orig.)
DEFF Research Database (Denmark)
Leosson, Kristjan
Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...
DEFF Research Database (Denmark)
Leosson, Kristjan
1999-01-01
Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.
2017-08-01
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.
Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K
2017-08-02
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Modelling of GaN quantum dot terahertz cascade laser
Asgari, A.; Khorrami, A. A.
2013-03-01
In this paper GaN based spherical quantum dot cascade lasers has been modelled, where the generation of the terahertz waves are obtained. The Schrödinger, Poisson, and the laser rate equations have been solved self-consistently including all dominant physical effects such as piezoelectric and spontaneous polarization in nitride-based QDs and the effects of the temperature. The exact value of the energy levels, the wavefunctions, the lifetimes of electron levels, and the lasing frequency are calculated. Also the laser parameters such as the optical gain, the output power and the threshold current density have been calculated at different temperatures and applied electric fields.
Modeling and simulation of InGaN/GaN quantum dots solar cell
Aissat, A.; Benyettou, F.; Vilcot, J. P.
2016-07-01
Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In0.25Ga0.75N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In0.25Ga0.75N/GaN quantum dots with pin solar cell. The conversion efficiency begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.
DEFF Research Database (Denmark)
Leosson, Kristjan
1999-01-01
of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used......Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... to probe coherence times of exciton states and relaxation processes, both of which are important for future applications....
DEFF Research Database (Denmark)
Leosson, Kristjan
of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used......Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... to probe coherence times of exciton states and relaxation processes, both of which are important for future applications....
Modeling charge relaxation in graphene quantum dots induced by electron-phonon interaction
Reichardt, Sven; Stampfer, Christoph
2016-06-01
We study and compare two analytic models of graphene quantum dots for calculating charge relaxation times due to electron-phonon interaction. Recently, charge relaxation processes in graphene quantum dots have been probed experimentally and here we provide a theoretical estimate of relaxation times. By comparing a model with pure edge confinement to a model with electrostatic confinement, we find that the latter features much larger relaxation times. Interestingly, relaxation times in electrostatically defined quantum dots are predicted to exceed the experimentally observed lower bound of ˜100 ns.
Model of tunnelling through periodic array of quantum dots
Directory of Open Access Journals (Sweden)
Meynster Dmitry
2017-01-01
Full Text Available Several explicitly solvable models of electron tunnelling in a system of single and double two-dimensional periodic arrays of quantum dots with two laterally coupled leads in a homogeneous magnetic field are constructed. First, a model of single layer formed by periodic array of zero-range potentials is described. The Landau operator (the Schrodinger operator with a magnetic field with point-like interactions is the system Hamiltonian. We deal with two types of the layer lattices: square and honeycomb. The periodicity condition gives one an invariance property for the Hamiltonian in respect to magnetic translations group. The consideration of double quantum layer reduces to the replacement of the basic cell for the single layer by a cell including centers of different layers. Two variants of themodel for the double layer are suggested: with direct tunneling between the layers and with the connecting channels (segments in the model between the layers. The theory of self-adjoint extensions of symmetric operators is a mathematical background of the model. The third stage of the construction is the description of leads connection. It is made by the operator extensions theory method too. Electron tunneling from input lead to the output lead through the double quantum layer is described. Energy ranges with extremely small (practically, zero transmission were found. Dependencies of the transmission coefficient (particularly, “zero transmission bands” positions on the magnetic field, the energy of electron and the distance between layers are investigated. The results are compared with the corresponding single-layer transmission.
Temperature characteristics of quantum dot devices: Rate vs. Master Equation Models
DEFF Research Database (Denmark)
Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg;
2001-01-01
The change of transparency current with temperature for quantum dot devices depends strongly on whether a rate or master equation model is used. The master equation model successfully explains experimental observations of negative characteristic temperatures.......The change of transparency current with temperature for quantum dot devices depends strongly on whether a rate or master equation model is used. The master equation model successfully explains experimental observations of negative characteristic temperatures....
Novel three-state quantum dot gate field effect transistor fabrication, modeling and applications
Karmakar, Supriya
2014-01-01
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Semiconductor quantum dot toxicity in a mouse in vivo model
Bozrova, Svetlana V.; Baryshnikova, Maria A.; Nabiev, Igor; Sukhanova, Alyona
2017-01-01
Quantum dots (QDs) are increasingly widely used in clinical medicine. Their most promising potential applications are cancer diagnosis, including in vivo tumour imaging and targeted drug delivery. In this connection, the main questions are whether or not QDs are toxic for humans and, if they are, what concentration is relatively harmless. We have carried out in vivo experiments with CdSe/ZnS fluorescent semiconductor core/shell QDs, which are currently the most widely used in research.
Atomistic Model of Fluorescence Intermittency of Colloidal Quantum Dots
Voznyy, O.
2014-04-16
Optoelectronic applications of colloidal quantum dots demand a high emission efficiency, stability in time, and narrow spectral bandwidth. Electronic trap states interfere with the above properties but understanding of their origin remains lacking, inhibiting the development of robust passivation techniques. Here we show that surface vacancies improve the fluorescence yield compared to vacancy-free surfaces, while dynamic vacancy aggregation can temporarily turn fluorescence off. We find that infilling with foreign cations can stabilize the vacancies, inhibiting intermittency and improving quantum yield, providing an explanation of recent experimental observations. © 2014 American Physical Society.
Energy Technology Data Exchange (ETDEWEB)
Vukmirovic, Nenad; Wang, Lin-Wang
2009-11-10
This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.
Calculation Model for Current-voltage Relation of Silicon Quantum-dots-based Nano-memory
Institute of Scientific and Technical Information of China (English)
YANG Hong-guan; DAI Da-kang; YU Biao; SHANG Lin-lin; GUO You-hong
2007-01-01
Based on the capacitive coupling formalism, an analytic model for calculating the drain currents of the quantum-dots floating-gate memory cell is proposed. Using this model, one can calculate numerically the drain currents of linear, saturation and subthreshold regions of the device with/without charges stored on the floating dots. The read operation process of an n-channel Si quantum-dots floating-gate nano-memory cell is discussed after calculating the drain currents versus the drain to source voltages and control gate voltages in both high and low threshold states respectively.
A transfer hamiltonian model for devices based on quantum dot arrays.
Illera, S; Prades, J D; Cirera, A; Cornet, A
2015-01-01
We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.
A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays
Directory of Open Access Journals (Sweden)
S. Illera
2015-01-01
Full Text Available We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.
Raffaelle, Ryne P.; Castro, Stephanie L.; Hepp, Aloysius; Bailey, Sheila G.
2002-01-01
We have been investigating the synthesis of quantum dots of CdSe, CuInS2, and CuInSe2 for use in an intermediate bandgap solar cell. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Bawendi, et. al., in the early 1990's. However, unlike previous work in this area we have also utilized single-source precursor molecules in the synthesis process. We will present XRD, TEM, SEM and EDS characterization of our initial attempts at fabricating these quantum dots. Investigation of the size distributions of these nanoparticles via laser light scattering and scanning electron microscopy will be presented. Theoretical estimates on appropriate quantum dot composition, size, and inter-dot spacing along with potential scenarios for solar cell fabrication will be discussed.
Modelling graphene quantum dot functionalization via ethylene-dinitrobenzoyl
Energy Technology Data Exchange (ETDEWEB)
Noori, Keian; Giustino, Feliciano [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Hübener, Hannes [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Nano-Bio Spectroscopy Group and European Theoretical Spectroscopy Facility (ETSF), Universidad del País Vasco CFM CSIC-UPV/EHU-MPC & DIPC, Av. Tolosa 72, 20018 San Sebastián (Spain); Kymakis, Emmanuel [Center of Materials Technology and Photonics & Electrical Engineering Department, Technological Educational Institute (TEI) of Crete, Heraklion, 71004 Crete (Greece)
2016-03-21
Ethylene-dinitrobenzoyl (EDNB) linked to graphene oxide has been shown to improve the performance of graphene/polymer organic photovoltaics. Its binding conformation on graphene, however, is not yet clear, nor have its effects on work function and optical absorption been explored more generally for graphene quantum dots. In this report, we clarify the linkage of EDNB to GQDs from first principles and show that the binding of the molecule increases the work function of graphene, while simultaneously modifying its absorption in the ultraviolet region.
Wu, Jiang
2014-01-01
This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.
Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel
2014-01-01
This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of
Modeling and simulation of InGaN/GaN quantum dots solar cell
Energy Technology Data Exchange (ETDEWEB)
Aissat, A., E-mail: sakre23@yahoo.fr [LATSI Laboratory, Faculty of Technology, University of Blida 1 (Algeria); LASICOMLaboratory, Faculty of Sciences, University of Blida 1 (Algeria); Benyettou, F. [LASICOMLaboratory, Faculty of Sciences, University of Blida 1 (Algeria); Vilcot, J. P. [Institute of Electronics, Micro-Electronics and Nanotechnologies,UMR CNRS 8520, Université des Sciences et Technologies de Lille1, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq (France)
2016-07-25
Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiency begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.
Wu, Jiang
2013-01-01
The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou
A Simple Shell Model for Quantum Dots in a Tilted Magnetic Field
Heiss, W. D.; Nazmitdinov, R. G.
1997-01-01
A model for quantum dots is proposed, in which the motion of a few electrons in a three-dimensional harmonic oscillator potential under the influence of a homogeneous magnetic field of arbitrary direction is studied. The spectrum and the wave functions are obtained by solving the classical problem. The ground state of the Fermi-system is obtained by minimizing the total energy with regard to the confining frequencies. From this a dependence of the equilibrium shape of the quantum dot on the e...
Model of tunnelling through periodic array of quantum dots in a magnetic field
Institute of Scientific and Technical Information of China (English)
I.Yu.Popov; S.A.Osipov
2012-01-01
A two-dimensional periodic array of quantum dots with two laterally coupled leads in a magnetic field is considered.The model of electron transport through the system based on the theory of self-adjoint extensions of symmetric operators is suggested.We obtain the formula for the transmission coefficient and investigate its dependence on the magnetic field.
Hexagonal graphene quantum dots
Ghosh, S.
2016-12-05
We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.
Klimov, Victor I
2010-01-01
""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do
Sapmaz, S.
2006-01-01
Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small
Sapmaz, S.
2006-01-01
Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small si
Colloidal quantum dots as optoelectronic elements
Vasudev, Milana; Yamanaka, Takayuki; Sun, Ke; Li, Yang; Yang, Jianyong; Ramadurai, Dinakar; Stroscio, Michael A.; Dutta, Mitra
2007-02-01
Novel optoelectronic systems based on ensembles of semiconductor nanocrystals are addressed in this paper. Colloidal semiconductor quantum dots and related quantum-wire structures have been characterized optically; these optical measurements include those made on self-assembled monolayers of DNA molecules terminated on one end with a common substrate and on the other end with TiO II quantum dots. The electronic properties of these structures are modeled and compared with experiment. The characterization and application of ensembles of colloidal quantum dots with molecular interconnects are considered. The chemically-directed assembly of ensembles of colloidal quantum dots with biomolecular interconnects is demonstrated with quantum dot densities in excess of 10 +17 cm -3. A number of novel photodetectors have been designed based on the combined use of double-barrier quantum-well injectors, colloidal quantum dots, and conductive polymers. Optoelectronic devices including photodetectors and solar cells based on threedimensional ensembles of quantum dots are considered along with underlying phenomena such as miniband formation and the robustness of minibands to displacements of quantum dots in the ensemble.
Dissipative tunneling in structures with quantum dots and quantum molecules
Dahnovsky, Yu. I.; Krevchik, V. D.; Semenov, M. B.; Yamamoto, K.; Zhukovsky, V. Ch.; Aringazin, A. K.; Kudryashov, E. I.; Mayorov, V. G.
2005-01-01
The problem of tunneling control in systems "quantum dot - quantum well" (as well as "quantum dot - quantum dot" or quantum molecule) and "quantum dot - bulk contact" is studied as a quantum tunneling with dissipation process in the semiclassical (instanton) approximation. For these systems temperature and correlation between a quantum dot radius and a quantum well width (or another quantum dot radius) are considered to be control parameters. The condition for a single electron blockade is fo...
Modeling of phonon- and Coulomb-mediated capture processes in quantum dots
DEFF Research Database (Denmark)
Magnúsdóttir, Ingibjörg
2003-01-01
of higher dimensionality. Here, we investigate carrier capture processes into quantum dots, mediated by emission of one and two LO phonons. In these investigations is is assumed that the dot is empty initially. In the Case of single-phonon capture we also investigate the influence of the presence...... are performed by assuming that the incident carrier is a free carrier described by a plane wave. Therefore, the influence of waves are scattered by the quantum dot have been neglected. At certain wavelengths and dot sizes, the quantum dot can act as a Fabry-Perot mirror in which the incident carrier travels...
Colloidal Double Quantum Dots.
Teitelboim, Ayelet; Meir, Noga; Kazes, Miri; Oron, Dan
2016-05-17
Pairs of coupled quantum dots with controlled coupling between the two potential wells serve as an extremely rich system, exhibiting a plethora of optical phenomena that do not exist in each of the isolated constituent dots. Over the past decade, coupled quantum systems have been under extensive study in the context of epitaxially grown quantum dots (QDs), but only a handful of examples have been reported with colloidal QDs. This is mostly due to the difficulties in controllably growing nanoparticles that encapsulate within them two dots separated by an energetic barrier via colloidal synthesis methods. Recent advances in colloidal synthesis methods have enabled the first clear demonstrations of colloidal double quantum dots and allowed for the first exploratory studies into their optical properties. Nevertheless, colloidal double QDs can offer an extended level of structural manipulation that allows not only for a broader range of materials to be used as compared with epitaxially grown counterparts but also for more complex control over the coupling mechanisms and coupling strength between two spatially separated quantum dots. The photophysics of these nanostructures is governed by the balance between two coupling mechanisms. The first is via dipole-dipole interactions between the two constituent components, leading to energy transfer between them. The second is associated with overlap of excited carrier wave functions, leading to charge transfer and multicarrier interactions between the two components. The magnitude of the coupling between the two subcomponents is determined by the detailed potential landscape within the nanocrystals (NCs). One of the hallmarks of double QDs is the observation of dual-color emission from a single nanoparticle, which allows for detailed spectroscopy of their properties down to the single particle level. Furthermore, rational design of the two coupled subsystems enables one to tune the emission statistics from single photon
Optically active quantum-dot molecules.
Shlykov, Alexander I; Baimuratov, Anvar S; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D
2017-02-20
Chiral molecules made of coupled achiral semiconductor nanocrystals, also known as quantum dots, show great promise for photonic applications owing to their prospective uses as configurable building blocks for optically active structures, materials, and devices. Here we present a simple model of optically active quantum-dot molecules, in which each of the quantum dots is assigned a dipole moment associated with the fundamental interband transition between the size-quantized states of its confined charge carriers. This model is used to analytically calculate the rotatory strengths of optical transitions occurring upon the excitation of chiral dimers, trimers, and tetramers of general configurations. The rotatory strengths of such quantum-dot molecules are found to exceed the typical rotatory strengths of chiral molecules by five to six orders of magnitude. We also study how the optical activity of quantum-dot molecules shows up in their circular dichroism spectra when the energy gap between the molecular states is much smaller than the states' lifetime, and maximize the strengths of the circular dichroism peaks by optimizing orientations of the quantum dots in the molecules. Our analytical results provide clear design guidelines for quantum-dot molecules and can prove useful in engineering optically active quantum-dot supercrystals and photonic devices.
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Thorbeck, Ted; Fujiwara, Akira; Zimmerman, Neil M.
2012-09-01
Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimensions. We also demonstrate that a capacitance simulator can be used to predict measured gate capacitances to within 20%. A simple parallel plate capacitor model can be used to predict how the capacitances change with device dimensions; however, the parallel plate capacitor model fails for the smallest devices because the capacitances are dominated by fringing fields. We show how the capacitances due to fringing fields can be quickly estimated.
Single quantum dot nanowire photodetectors
Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.
2010-01-01
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the line
Single quantum dot nanowire photodetectors
Van Kouwen, M.P.; Van Weert, M.H.M.; Reimer, M.E.; Akopian, N.; Perinetti, U.; Algra, R.E.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.; Zwiller, V.
2010-01-01
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the
Directory of Open Access Journals (Sweden)
Mohamed Henini
2002-06-01
These sophisticated technologies for the growth of high quality epitaxial layers of compound semiconductor materials on single crystal semiconductor substrates are becoming increasingly important for the development of the semiconductor electronics industry. This article is intended to convey the flavor of the subject by focusing on the technology and applications of self-assembled quantum dots (QDs and to give an introduction to some of the essential characteristics.
Quantum Computer Using Coupled Quantum Dot Molecules
Wu, N J; Natori, A; Yasunaga, H; Wu*, Nan-Jian
1999-01-01
We propose a method for implementation of a quantum computer using artificial molecules. The artificial molecule consists of two coupled quantum dots stacked along z direction and one single electron. One-qubit and two-qubit gates are constructed by one molecule and two coupled molecules, respectively.The ground state and the first excited state of the molecule are used to encode the |0> and |1> states of a qubit. The qubit is manipulated by a resonant electromagnetic wave that is applied directly to the qubit through a microstrip line. The coupling between two qubits in a quantum controlled NOT gate is switched on (off) by floating (grounding) the metal film electrodes. We study the operations of the gates by using a box-shaped quantum dot model and numerically solving a time-dependent Schridinger equation, and demonstrate that the quantum gates can perform the quantum computation. The operating speed of the gates is about one operation per 4ps. The reading operation of the output of the quantum computer can...
Quantum dots for quantum information technologies
2017-01-01
This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.
Electron correlations in quantum dots
Tipton, D L J
2001-01-01
Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining p...
Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results.
Barettin, Daniele; De Angelis, Roberta; Prosposito, Paolo; Auf der Maur, Matthias; Casalboni, Mauro; Pecchia, Alessandro
2014-05-16
We report on numerical simulations of a zincblende InP surface quantum dot (QD) on In₀.₄₈Ga₀.₅₂ buffer. Our model is strictly based on experimental structures, since we extrapolated a three-dimensional dot directly by atomic force microscopy results. Continuum electromechanical, [Formula: see text] bandstructure and optical calculations are presented for this realistic structure, together with benchmark calculations for a lens-shape QD with the same radius and height of the extrapolated dot. Interesting similarities and differences are shown by comparing the results obtained with the two different structures, leading to the conclusion that the use of a more realistic structure can provide significant improvements in the modeling of QDs fact, the remarkable splitting for the electron p-like levels of the extrapolated dot seems to prove that a realistic experimental structure can reproduce the right symmetry and a correct splitting usually given by atomistic calculations even within the multiband [Formula: see text] approach. Moreover, the energy levels and the symmetry of the holes are strongly dependent on the shape of the dot. In particular, as far as we know, their wave function symmetries do not seem to resemble to any results previously obtained with simulations of zincblende ideal structures, such as lenses or truncated pyramids. The magnitude of the oscillator strengths is also strongly dependent on the shape of the dot, showing a lower intensity for the extrapolated dot, especially for the transition between the electrons and holes ground state, as a result of a relevant reduction of the wave functions overlap. We also compare an experimental photoluminescence spectrum measured on an homogeneous sample containing about 60 dots with a numerical ensemble average derived from single dot calculations. The broader energy range of the numerical spectrum motivated us to perform further verifications, which have clarified some aspects of the experimental
Another model for a multiexcitonic quantum dot in an optical microcavity
Institute of Scientific and Technical Information of China (English)
SHAN Guang-cun; HUANG Wei; BAO Shu-ying
2007-01-01
Very recently, a multiexcitonic quantum dot in an optical microcavity have been theoretically studied [Herbert Vincka, Boris A. Rodriguez, and Augusto Gonzalez, Physica E, 2006, 35: 99-102]. However, due to the inevitable damping losses through the microcavity, in this work, we will present a more precise and sound model in the Lindblad form master equation to investigate the photonic properties of a single quantum dot (QD) in an optical microcavity system, in which the QD may confine the multiexcitons and be in resonant interaction with a single photonic mode of an optical microcavity. The excitation energies, and the properties of the emission photon from the QD microcavity are computed as functions of the exciton-photon coupling strength, detuning, and pump rate. We further compare our results with their results, and find that the calculated intensity of the emitted photon and the spectra crucially depend on the exciton-photon coupling strength g, the photon detuning, and the number of excitons in the QD. Finally, we will give a physical mechanism of the dressed-state picture for the strong coupling between the single mode of an optical microcavity and the QD emitters to explain the details of the emission photon spectra. Our study establishes useful guidelines for the experimental study of such multiexcitonic quantum dot in an optical microcavity system.
Suzuki, Nozomu; Wang, Yichun; Elvati, Paolo; Qu, Zhi-Bei; Kim, Kyoungwon; Jiang, Shuang; Baumeister, Elizabeth; Lee, Jaewook; Yeom, Bongjun; Bahng, Joong Hwan; Lee, Jaebeom; Violi, Angela; Kotov, Nicholas A
2016-02-23
Chiral nanostructures from metals and semiconductors attract wide interest as components for polarization-enabled optoelectronic devices. Similarly to other fields of nanotechnology, graphene-based materials can greatly enrich physical and chemical phenomena associated with optical and electronic properties of chiral nanostructures and facilitate their applications in biology as well as other areas. Here, we report that covalent attachment of l/d-cysteine moieties to the edges of graphene quantum dots (GQDs) leads to their helical buckling due to chiral interactions at the "crowded" edges. Circular dichroism (CD) spectra of the GQDs revealed bands at ca. 210-220 and 250-265 nm that changed their signs for different chirality of the cysteine edge ligands. The high-energy chiroptical peaks at 210-220 nm correspond to the hybridized molecular orbitals involving the chiral center of amino acids and atoms of graphene edges. Diverse experimental and modeling data, including density functional theory calculations of CD spectra with probabilistic distribution of GQD isomers, indicate that the band at 250-265 nm originates from the three-dimensional twisting of the graphene sheet and can be attributed to the chiral excitonic transitions. The positive and negative low-energy CD bands correspond to the left and right helicity of GQDs, respectively. Exposure of liver HepG2 cells to L/D-GQDs reveals their general biocompatibility and a noticeable difference in the toxicity of the stereoisomers. Molecular dynamics simulations demonstrated that d-GQDs have a stronger tendency to accumulate within the cellular membrane than L-GQDs. Emergence of nanoscale chirality in GQDs decorated with biomolecules is expected to be a general stereochemical phenomenon for flexible sheets of nanomaterials.
Directory of Open Access Journals (Sweden)
Somsak Panyakeow
2010-10-01
Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.
Time-domain model of quantum-dot semiconductor optical amplifiers for wideband optical signals.
Puris, D; Schmidt-Langhorst, C; Lüdge, K; Majer, N; Schöll, E; Petermann, K
2012-11-19
We present a novel theoretical time-domain model for a quantum dot semiconductor optical amplifier, that allows to simulate subpicosecond pulse propagation including power-based and phase-based effects. Static results including amplified spontaneous emission spectra, continuous wave amplification, and four-wave mixing experiments in addition to dynamic pump-probe simulations are presented for different injection currents. The model uses digital filters to describe the frequency dependent gain and microscopically calculated carrier-carrier scattering rates for the interband carrier dynamics. It can be used to calculate the propagation of multiple signals with different wavelengths or one wideband signal with high bitrate.
Quasi-classical modeling of molecular quantum-dot cellular automata multidriver gates
Rahimi, Ehsan; Nejad, Shahram Mohammad
2012-05-01
Molecular quantum-dot cellular automata (mQCA) has received considerable attention in nanoscience. Unlike the current-based molecular switches, where the digital data is represented by the on/off states of the switches, in mQCA devices, binary information is encoded in charge configuration within molecular redox centers. The mQCA paradigm allows high device density and ultra-low power consumption. Digital mQCA gates are the building blocks of circuits in this paradigm. Design and analysis of these gates require quantum chemical calculations, which are demanding in computer time and memory. Therefore, developing simple models to probe mQCA gates is of paramount importance. We derive a semi-classical model to study the steady-state output polarization of mQCA multidriver gates, directly from the two-state approximation in electron transfer theory. The accuracy and validity of this model are analyzed using full quantum chemistry calculations. A complete set of logic gates, including inverters and minority voters, are implemented to provide an appropriate test bench in the two-dot mQCA regime. We also briefly discuss how the QCADesigner tool could find its application in simulation of mQCA devices.
Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.
Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin
2017-06-27
Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.
Quantum dots: Rethinking the electronics
Bishnoi, Dimple
2016-05-01
In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including "waste heat" from the sun's energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.
Monte Carlo modeling of the dual-mode regime in quantum-well and quantum-dot semiconductor lasers.
Chusseau, Laurent; Philippe, Fabrice; Disanto, Filippo
2014-03-10
Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer... As a major result, a possible steady-state dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertz-beating source whereas it does not occur for QW lasers.
Wang, TsingHai; Hsieh, HuiAn; Hsieh, YiKong; Chiang, ChiShiun; Sun, YuhChang; Wang, ChuFang
2012-12-01
Understanding the cytotoxicity of quantum dots strongly relies upon the development of new analytical techniques to gather information about various aspects of the system. In this study, we demonstrate the in vivo biodistribution and fate of CdSe quantum dots in the murine model by means of laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). By comparing the hot zones of each element acquired from LA-ICP-MS with those in fluorescence images, together with hematoxylin and eosin-stained images, we are able to perceive the fate and in vivo interactions between quantum dots and rat tissues. One hour after intravenous injection, we found that all of the quantum dots had been concentrated inside the spleen, liver and kidneys, while no quantum dots were found in other tissues (i.e., muscle, brain, lung, etc.). In the spleen, cadmium-114 signals always appeared in conjunction with iron signals, indicating that the quantum dots had been filtered from main vessels and then accumulated inside splenic red pulp. In the liver, the overlapped hot zones of quantum dots and those of phosphorus, copper, and zinc showed that these quantum dots have been retained inside hepatic cells. Importantly, it was noted that in the kidneys, quantum dots went into the cortical areas of adrenal glands. At the same time, hot zones of copper appeared in proximal tubules of the cortex. This could be a sign that the uptake of quantum dots initiates certain immune responses. Interestingly, the intensity of the selenium signals was not proportional to that of cadmium in all tissues. This could be the result of the decomposition of the quantum dots or matrix interference. In conclusion, the advantage in spatial resolution of LA-ICP-MS is one of the most powerful tools to probe the fate, interactions and biodistribution of quantum dots in vivo.
Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices
Directory of Open Access Journals (Sweden)
Giovanni Giannoccaro
2016-01-01
Full Text Available In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ indium gallium nitride (InGaN self-assembled quantum dot superlattice (QDSL is developed. It considers a simplified cuboid shape for quantum dots (QDs. The semi-analytical investigation starts from evaluation through the three-dimensional (3D finite element method (FEM simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers’ electric potentials and effective masses for the conduction band (CB and three valence sub-bands for each direction are evaluated. For the minibands’ investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D Kronig–Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier–Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE and magnetic (TM incident light polarization is calculated using Fermi’s golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.
Barroso, Margarida M
2011-03-01
Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated transport.
Hydrophobin-Encapsulated Quantum Dots.
Taniguchi, Shohei; Sandiford, Lydia; Cooper, Maggie; Rosca, Elena V; Ahmad Khanbeigi, Raha; Fairclough, Simon M; Thanou, Maya; Dailey, Lea Ann; Wohlleben, Wendel; von Vacano, Bernhard; de Rosales, Rafael T M; Dobson, Peter J; Owen, Dylan M; Green, Mark
2016-02-01
The phase transfer of quantum dots to water is an important aspect of preparing nanomaterials that are suitable for biological applications, and although numerous reports describe ligand exchange, very few describe efficient ligand encapsulation techniques. In this report, we not only report a new method of phase transferring quantum dots (QDs) using an amphiphilic protein (hydrophobin) but also describe the advantages of using a biological molecule with available functional groups and their use in imaging cancer cells in vivo and other imaging applications.
Barroso, Margarida M.
2011-01-01
Quantum dots are semiconductor nanocrystals that have broad excitation spectra, narrow emission spectra, tunable emission peaks, long fluorescence lifetimes, negligible photobleaching, and ability to be conjugated to proteins, making them excellent probes for bioimaging applications. Here the author reviews the advantages and disadvantages of using quantum dots in bioimaging applications, such as single-particle tracking and fluorescence resonance energy transfer, to study receptor-mediated t...
Sensitivity of quantum-dot semiconductor lasers to optical feedback.
O'Brien, D; Hegarty, S P; Huyet, G; Uskov, A V
2004-05-15
The sensitivity of quantum-dot semiconductor lasers to optical feedback is analyzed with a Lang-Kobayashi approach applied to a standard quantum-dot laser model. The carriers are injected into a quantum well and are captured by, or escape from, the quantum dots through either carrier-carrier or phonon-carrier interaction. Because of Pauli blocking, the capture rate into the dots depends on the carrier occupancy level in the dots. Here we show that different carrier capture dynamics lead to a strong modification of the damping of the relaxation oscillations. Regions of increased damping display reduced sensitivity to optical feedback even for a relatively large alpha factor.
Quantum analysis of plasmonic coupling between quantum dots and nanoparticles
Ahmad, SalmanOgli
2016-10-01
In this study, interaction between core-shells nanoparticles and quantum dots is discussed via the full-quantum-theory method. The electromagnetic field of the nanoparticles is derived by the quasistatic approximation method and the results for different regions of the nanoparticles are quantized from the time-harmonic to the wave equation. Utilizing the optical field quantization, the nanoparticles' and quantum dots' deriving amplitudes contributing to the excitation waves are determined. In the current model, two counterpropagating waves with two different frequencies are applied. We derived the Maxwell-Bloch equations from the Heisenberg-Langevin equations; thus the nanoparticles-quantum dots interaction is perused. Moreover, by full quantum analyzing of the analytical expression, the quantum-plasmonic coupling relation and the Purcell factor are achieved. We show that the spontaneous emission of quantum dots can be dramatically manipulated by engineering the plasmon-plasmon interaction in the core-shells nanoparticles. This issue is a very attractive point for designing a wide variety of quantum-plasmonic sensors. Through the investigation of the nanoparticle plasmonic interaction effects on absorbed power, the results show that the nanoparticles' and quantum dots' absorption saturation state can be switched to each other just by manipulation of their deriving amplitudes. In fact, we manage the interference between the two waves' deriving amplitudes just by the plasmonic interactions effect.
Modeling and simulation of InAs/GaAs quantum dot lasers
Institute of Scientific and Technical Information of China (English)
LV Shao-feng; Ivo Montrosset; Mariangela Gioannini; SONG Shu-zhong; MA Jian-wei
2011-01-01
Based on the analysis of carrier dynamics in quantum dots (QDs), the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three energy levels join in lasing. A simulation is conducted by MATLAB according to the rate equation model we obtain. The simulation results of PI characteristic, gain characteristic and intensity modulation response are reasonable. Also, the relations between the left facet reflectivity of laser cavity and threshold current as well as modulation bandwidth are studied. It is indicated that the left facet reflectivity increasing can result in reduced threshold current and improved modulation bandwidth, which is in accordance with experimental results. The internal mechanism of QD lasers is fully described with the rate equation model,which is helpful for QD lasers research.
Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser
Chusseau, Laurent; Viktorovitch, P; Letartre, Xavier
2013-01-01
This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing.
SU(4) Kondo entanglement in double quantum dot devices
Bonazzola, Rodrigo; Andrade, J. A.; Facio, Jorge I.; García, D. J.; Cornaglia, Pablo S.
2017-08-01
We analyze, from a quantum information theory perspective, the possibility of realizing an SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground-state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson-type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.
Entrapment in phospholipid vesicles quenches photoactivity of quantum dots.
Generalov, Roman; Kavaliauskiene, Simona; Westrøm, Sara; Chen, Wei; Kristensen, Solveig; Juzenas, Petras
2011-01-01
Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers.
Entrapment in phospholipid vesicles quenches photoactivity of quantum dots
Directory of Open Access Journals (Sweden)
Generalov R
2011-09-01
Full Text Available Roman Generalov1,2, Simona Kavaliauskiene1, Sara Westrøm1, Wei Chen3, Solveig Kristensen2, Petras Juzenas11Department of Radiation Biology, Institute for Cancer Research, Norwegian Radium Hospital, Oslo University Hospital, Oslo, Norway; 2School of Pharmacy, University of Oslo, Oslo, Norway; 3Department of Physics, The University of Texas at Arlington, Arlington, TX, USAAbstract: Quantum dots have emerged with great promise for biological applications as fluorescent markers for immunostaining, labels for intracellular trafficking, and photosensitizers for photodynamic therapy. However, upon entry into a cell, quantum dots are trapped and their fluorescence is quenched in endocytic vesicles such as endosomes and lysosomes. In this study, the photophysical properties of quantum dots were investigated in liposomes as an in vitro vesicle model. Entrapment of quantum dots in liposomes decreases their fluorescence lifetime and intensity. Generation of free radicals by liposomal quantum dots is inhibited compared to that of free quantum dots. Nevertheless, quantum dot fluorescence lifetime and intensity increases due to photolysis of liposomes during irradiation. In addition, protein adsorption on the quantum dot surface and the acidic environment of vesicles also lead to quenching of quantum dot fluorescence, which reappears during irradiation. In conclusion, the in vitro model of phospholipid vesicles has demonstrated that those quantum dots that are fated to be entrapped in endocytic vesicles lose their fluorescence and ability to act as photosensitizers.Keywords: fluorescence lifetime, free radicals, liposomes, lipodots, reactive oxygen species
Gerard, Valerie; Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii K.
2015-10-01
The main goal of our research is to develop new types of technologically important optically active quantum dot (QD) based materials, study their properties and explore their biological applications. For the first time chiral II-VI QDs have been prepared by us using microwave induced heating with the racemic (Rac), D- and L-enantiomeric forms of penicillamine as stabilisers. Circular dichroism (CD) studies of these QDs have shown that D- and L-penicillamine stabilised particles produced mirror image CD spectra, while the particles prepared with a Rac mixture showed only a weak signal. It was also demonstrated that these QDs show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. These QDs have demonstrated highly specific chiral recognition of various biological species including aminoacids. The utilisation of chiral stabilisers also allowed the preparation of new water soluble white emitting CdS nano-tetrapods, which demonstrated circular dichroism in the band-edge region of the spectrum. Biological testing of chiral CdS nanotetrapods displayed a chiral bias for an uptake of the D- penicillamine stabilised nano-tetrapods by cancer cells. It is expected that this research will open new horizons in the chemistry of chiral nanomaterials and their application in nanobiotechnology, medicine and optical chemo- and bio-sensing.
Model microcavity laser with CdSe/CdS quantum dots as lasing media
Naveed, H. B.; Popov, S.; Shafique, M.
2016-02-01
A model is established for a microcavity laser with cadmium selenium/cadmium sulfide (CdSe/CdS) core/shell quantum dots (QDs) as a lasing medium. The research was organised to develop and solve the rate equations for the above mentioned microcavity laser to calculate the output parameters during lasing. Using time-resolved fluorescence spectroscopy, the radiative life time of the lasing medium was measured along with its fluorescence and absorption spectra. A model is also established on the basis of the segment contact method (SCM) to demonstrate the threshold gain profile using the absorption spectrum of CdSe/CdS core/shell type-II QDs residing in the cavity. A laser cavity of size 1 μm was pumped with an optical source (532 nm) to achieve an optimised laser peak at 470 nm.
Thermoelectric transport through quantum dots
Energy Technology Data Exchange (ETDEWEB)
Merker, Lukas Heinrich
2016-06-30
In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum
Correlation effects on the energy spectra of quantum dot electrons with harmonic model interactions
Institute of Scientific and Technical Information of China (English)
无
2000-01-01
The low-lying excitation energy spectra of two, three and five quantum dot electrons with harmonic model interactions in a large magnetic field are calculated by the Hartree-Fock(HF) methods. Correlation effects on the energy level structures are investigated by comparing the HF results with the exact ones. It is found that the pure collective excitations(center-of-mass mode quanta) existing in the exact energy spectra do not appear in the HF energy spectra. The degeneracies of energy levels are also related to the correlation interactions, especially in the energy spectrum of two electrons. In the cases of more than two electrons, as the electron-electron interaction strength is increased the HF energy levels exhibit more complex crossings than the exact ones.
Semiconductor quantum dot scintillation under gamma-ray irradiation.
Létant, S E; Wang, T-F
2006-12-01
We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma irradiation and compare the energy resolution of the 59 keV line of americium-241 obtained with our quantum dot-glass nanocomposite to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon-transport models.
Mesoscopic Cavity Quantum Electrodynamics with Quantum Dots
Childress, L I; Lukin, M D
2003-01-01
We describe an electrodynamic mechanism for coherent, quantum mechanical coupling between spacially separated quantum dots on a microchip. The technique is based on capacitive interactions between the electron charge and a superconducting transmission line resonator, and is closely related to atomic cavity quantum electrodynamics. We investigate several potential applications of this technique which have varying degrees of complexity. In particular, we demonstrate that this mechanism allows design and investigation of an on-chip double-dot microscopic maser. Moreover, the interaction may be extended to couple spatially separated electron spin states while only virtually populating fast-decaying superpositions of charge states. This represents an effective, controllable long-range interaction, which may facilitate implementation of quantum information processing with electron spin qubits and potentially allow coupling to other quantum systems such as atomic or superconducting qubits.
Quantum-dot emitters in photonic nanostructures
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2010-01-01
The spontaneous emission from self-assembled semiconductor quantum dots is strongly influenced by the environment in which they are placed. This can be used to determine fundamental optical properties of the quantum dots as well as to manipulate and control the quantum-dot emission itself....
Beer's law in semiconductor quantum dots
Adamashvili, G T
2010-01-01
The propagation of a coherent optical linear wave in an ensemble of semiconductor quantum dots is considered. It is shown that a distribution of transition dipole moments of the quantum dots changes significantly the polarization and Beer's absorption length of the ensemble of quantum dots. Explicit analytical expressions for these quantities are presented.
Saturating optical resonances in quantum dots
Nair, Selvakumar V.; Rustagi, K. C.
Optical bistability in quantum dots, recently proposed by Chemla and Miller, is studied in a two-resonance model. We show that for such classical electromagnetic resonances the applicability of a two-resonance model is far more restrictive than for those in atoms.
Nanoscale quantum-dot supercrystals
Baimuratov, Anvar S.; Turkov, Vadim K.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.
2013-09-01
We develop a theory allowing one to calculate the energy spectra and wave functions of collective excitations in twoand three-dimensional quantum-dot supercrystals. We derive analytical expressions for the energy spectra of twodimensional supercrystals with different Bravias lattices, and use them to analyze the possibility of engineering the supercrystals' band structure. We demonstrate that the variation of the supercrystal's parameters (such as the symmetry of the periodic lattice and the properties of the quantum dots or their environment) enables an unprecedented control over its optical properties, thus paving a way towards the development of new nanophotonics materials.
A heat capacity model of T(3/2) dependence for quantum dots.
Roslee, Amirul Edham; Muzakir, Saifful Kamaluddin; Ismail, Jamil; Yusoff, Mashitah M; Jose, Rajan
2016-12-21
This article addresses the heat capacity of quantum dots (QDs) using density functional theory (DFT). By analyzing the evolution of phonon density of states and heat capacity as CdSe clusters grow from a molecular cluster into larger quantum confined solids, we have shown that their heat capacity does not fit very well with the Debye T(3) model. We observed that the number of phonon modes, which is discrete, increases as the particles grow, and the dispersion relation shows a quadratic behavior in contrast to the bulk solids whose dispersion relation is linear and equal to the sound velocity. The phonon density of states showed a square root variation with respect to frequency whereas that of the bulk is a quadratic variation of frequency. From the observed variation in the phonon density of states and holding the fact that the atomic vibrations in solids are elastically coupled, we have re-derived the expression for total energy of the QDs and arrive at a T(3/2) model of heat capacity, which fits very well to the observed heat capacity data. These results give promising directions in the understanding of the evolution of the thermophysical properties of solids.
Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities
DEFF Research Database (Denmark)
Madsen, Kristian Høeg
deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...... Successfully model the decay rates with a microscopic model that allows us to for the first time extract the effective phonon density of states, which we can model with bulk phonons. Studies on a quantum dot detuned from a low-Q mode of a photonic-crystal cavity show a high collection efficiency at the first......In this thesis we have performed quantum-electrodynamics experiments on quantum dots embedded in photonic-crystal cavities. We perform a quantitative comparison of the decay dynamics and emission spectra of quantum dots embedded in a micropillar cavity and a photonic-crystal cavity. The light...
Efficient Modeling of Coulomb Interaction Effect on Exciton in Crystal-Phase Nanowire Quantum Dot
DEFF Research Database (Denmark)
Taherkhani, Masoomeh; Gregersen, Niels; Mørk, Jesper
2016-01-01
The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show t...... that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates [1], [2]....
Spin storage in quantum dot ensembles and single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Heiss, Dominik
2009-10-15
This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h
Quantum Computation Using Optically Coupled Quantum Dot Arrays
Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)
1998-01-01
A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.
Erlingsson, S.I.
2003-01-01
The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis, stro
Colloidal quantum dot solar cells
Sargent, Edward H.
2012-03-01
Solar cells based on solution-processed semiconductor nanoparticles -- colloidal quantum dots -- have seen rapid advances in recent years. By offering full-spectrum solar harvesting, these cells are poised to address the urgent need for low-cost, high-efficiency photovoltaics.
Tomczak, Nikodem; Liu, Rongrong; Vancso, Julius G.
2013-01-01
Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of addit
Coherent control of quantum dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher
In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...... measurements the coherence time of the selfassembledquantum dots (QDs) has been reported to be limited by the spontaneousemission rate at cryogenic temperatures1.In this project we propose to alter the coherence time of QDs by taking advantage of arecent technique on modifying spontaneous emission rates...
Semiconductor double quantum dot micromaser.
Liu, Y-Y; Stehlik, J; Eichler, C; Gullans, M J; Taylor, J M; Petta, J R
2015-01-16
The coherent generation of light, from masers to lasers, relies upon the specific structure of the individual emitters that lead to gain. Devices operating as lasers in the few-emitter limit provide opportunities for understanding quantum coherent phenomena, from terahertz sources to quantum communication. Here we demonstrate a maser that is driven by single-electron tunneling events. Semiconductor double quantum dots (DQDs) serve as a gain medium and are placed inside a high-quality factor microwave cavity. We verify maser action by comparing the statistics of the emitted microwave field above and below the maser threshold. Copyright © 2015, American Association for the Advancement of Science.
Coherent control of quantum dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher
In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...... measurements the coherence time of the selfassembledquantum dots (QDs) has been reported to be limited by the spontaneousemission rate at cryogenic temperatures1.In this project we propose to alter the coherence time of QDs by taking advantage of arecent technique on modifying spontaneous emission rates...
Brightness-equalized quantum dots
Lim, Sung Jun; Zahid, Mohammad U.; Le, Phuong; Ma, Liang; Entenberg, David; Harney, Allison S.; Condeelis, John; Smith, Andrew M.
2015-10-01
As molecular labels for cells and tissues, fluorescent probes have shaped our understanding of biological structures and processes. However, their capacity for quantitative analysis is limited because photon emission rates from multicolour fluorophores are dissimilar, unstable and often unpredictable, which obscures correlations between measured fluorescence and molecular concentration. Here we introduce a new class of light-emitting quantum dots with tunable and equalized fluorescence brightness across a broad range of colours. The key feature is independent tunability of emission wavelength, extinction coefficient and quantum yield through distinct structural domains in the nanocrystal. Precise tuning eliminates a 100-fold red-to-green brightness mismatch of size-tuned quantum dots at the ensemble and single-particle levels, which substantially improves quantitative imaging accuracy in biological tissue. We anticipate that these materials engineering principles will vastly expand the optical engineering landscape of fluorescent probes, facilitate quantitative multicolour imaging in living tissue and improve colour tuning in light-emitting devices.
Colloidal quantum dots: synthesis, properties and applications
Brichkin, S. B.; Razumov, V. F.
2016-12-01
Key recent results obtained in studies of a new class of luminophores, colloidal quantum dots, are analyzed. Modern methods for the synthesis and post-synthetic treatment of colloidal quantum dots that make it possible to achieve record high quantum yield of luminescence and to modify their characteristics for specific applications are considered. Currently important avenues of research on colloidal quantum dots and the problems in and prospects for their practical applications in various fields are discussed. The bibliography includes 272 references.
Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing
2016-09-01
Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations.
Yan, Si-Qi; Xing, Rui; Zhou, Yan-Feng; Li, Kai-Le; Su, Yuan-Yuan; Qiu, Jian-Feng; Zhang, Yun-Hu; Zhang, Ke-Qin; He, Yao; Lu, Xiao-Ping; Xu, Shi-Qing
2016-01-01
Sexual glands are key sites affected by nanotoxicity, but there is no sensitive assay for measuring reproductive toxicity in animals. The aim of this study was to investigate the toxic effects of cadmium telluride quantum dots (CdTe-QDs) on gonads in a model organism, Bombyx mori. After dorsal vein injection of 0.32 nmol of CdTe-QDs per individual, the QDs passed through the outer membranes of gonads via the generation of ROS in the membranes of spermatocysts and ovarioles, as well as internal germ cells, thereby inducing early germ cell death or malformations via complex mechanisms related to apoptosis and autophagy through mitochondrial and lysosomal pathways. Histological observations of the gonads and quantitative analyses of germ cell development showed that the reproductive toxicity was characterized by obvious male sensitivity. Exposure to QDs in the early stage of males had severe adverse effects on the quantity and quality of sperm, which was the main reason for the occurrence of unfertilized eggs. Ala- or Gly-conjugated QDs could reduce the nanotoxicity of CdTe-QDs during germ cell development and fertilization of their offspring. The results demonstrate that males are preferable models for evaluating the reproductive toxicity of QDs in combined in vivo/in vitro investigations. PMID:27669995
Ultrashort Dynamics in Quantum Dot Waveguides: Theoretical Analysis and Experimental Investigations
DEFF Research Database (Denmark)
Gehrig, E.; Poel, Mike van der; Birkedal, Dan;
2004-01-01
Experimental pump-probe measurements and computational modeling on the basis of spatially resolved Quantum Dot Maxwell-Bloch equations allow identification of the processes underlying the ultrafast dot dynamics.......Experimental pump-probe measurements and computational modeling on the basis of spatially resolved Quantum Dot Maxwell-Bloch equations allow identification of the processes underlying the ultrafast dot dynamics....
Thermoelectric energy harvesting with quantum dots.
Sothmann, Björn; Sánchez, Rafael; Jordan, Andrew N
2015-01-21
We review recent theoretical work on thermoelectric energy harvesting in multi-terminal quantum-dot setups. We first discuss several examples of nanoscale heat engines based on Coulomb-coupled conductors. In particular, we focus on quantum dots in the Coulomb-blockade regime, chaotic cavities and resonant tunneling through quantum dots and wells. We then turn toward quantum-dot heat engines that are driven by bosonic degrees of freedom such as phonons, magnons and microwave photons. These systems provide interesting connections to spin caloritronics and circuit quantum electrodynamics.
Ultrafast spectroscopy of quantum dots
Foo, E
2001-01-01
exchange-correlation interactions among the confined carriers inside the dots are suggested to be responsible. A density functional calculation for BGR of the ground state transition shows good agreement with our experimental results, especially in the high dot occupancy regime. Many-particle state scattering gives rise to large homogeneous spectral broadening of the PL peaks, from which an intradot relaxation time approx 300 fs is estimated. This observation supports the results obtained by direct excitation of carriers within the QDs. Femtosecond time-resolved photoluminescence measured by frequency up-conversion has been used to investigate carrier dynamics in InAs/GaAs self-assembled quantum dots (QDs). Our results reveal ultrafast carrier relaxation and sequential state filling. Carrier relaxation is proposed to occur by Auger-type processes, and the sequential state filling suggests that intradot relaxation is much faster than carrier capture from the InAs wetting layer. Measurements obtained by direct ...
Electron states in a quantum dot in an effective-bond-orbital model
Nair, Selvakumar V.; Ramaniah, Lavanya M.; Rustagi, Kailash C.
1992-03-01
The electronic-level structure in semiconductor quantum dots is investigated in a tight-binding framework. The energy levels and wave functions of GaAs and CdS crystallites containing up to ~4000 atoms are calculated using an effective-bond-orbital model. The results obtained for GaAs crystallites by using parameters that accurately reproduce the band structure near the Γ point are compared with those obtained by calculations based on a multiband effective-mass theory. The effective-mass approximation (EMA) is found to correctly describe the qualitative features of the level structure, such as the bunching of levels and the spatial dependence of the wave functions. However, for very small particles the EMA grossly overestimates the confinement energies mainly because of the deviation of the bulk band structure from parabolic dispersion at high energies. For CdS crystallites we use a parametrization scheme that reproduces the main features of the bulk band structure throughout the Brillouin zone, and compare the results with those obtained by the multiband EMA, as well as with experimental data on interband transitions.
Xing, Rui; Chen, Xue-Dong; Zhou, Yan-Feng; Zhang, Jue; Su, Yuan-Yuan; Qiu, Jian-Feng; Sima, Yang-Hu; Zhang, Ke-Qin; He, Yao; Xu, Shi-Qing
2016-01-01
The use of quantum dots (QDs) in biological imaging applications and targeted drug delivery is expected to increase. However, the efficiency of QDs in drug targeting needs to be improved. Here, we show that amino acids linked to CdTe QDs significantly increased the targeted transfer efficiency and biological safety in the invertebrate model Bombyx mori. Compared with bare QDs530, the transfer efficiency of Ala- and Gly-conjugated QDs (QDs530-Ala and QDs530-Gly) in circulatory system increased by 2.6 ± 0.3 and 1.5 ± 0.3 times, and increased by 7.8 ± 0.9 and 2.9 ± 0.2 times in target tissue silk glands, respectively, after 24 h of QDs exposure. Meanwhile, the amount of conjugated QDs decreased by (68.4 ± 4.4)% and (46.7 ± 9.1)% in the non-target tissue fat body, and the speed at which they entered non-target circulating blood cells significantly decreased. The resultant QDs530-Ala revealed a better structural integrity in tissues and a longer retention time in hemolymph than that of QDs530 after exposure via the dorsal vessel. On the other hand, QDs530-Ala significantly reduced the toxicity to hemocytes, silk gland, and fat body, and reduced the amount of reactive oxygen species (ROS) in tissues.
Semiconductor quantum-dot lasers and amplifiers
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.
2002-01-01
We have produced GaAs-based quantum-dot edge-emitting lasers operating at 1.16 mu m with record-low transparency current, high output power, and high internal quantum efficiencies. We have also realized GaAs-based quantum-dot lasers emitting at 1.3 mu m, both high-power edge emitters and low...
Semiconductor quantum dots for electron spin qubits
van der Wiel, Wilfred Gerard; Stopa, M.; Kodera, T.; Hatano, T.; Tarucha, S.
2006-01-01
We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for
Ultrasmall colloidal PbS quantum dots
Energy Technology Data Exchange (ETDEWEB)
Reilly, Nick; Wehrung, Michael; O' Dell, Ryan Andrew [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403 (United States); Sun, Liangfeng, E-mail: lsun@bgsu.edu [Department of Physics and Astronomy, Bowling Green State University, Bowling Green, OH 43403 (United States); Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43403 (United States)
2014-09-15
Ultrasmall colloidal lead sulfide quantum dots can increase the open circuit voltages of quantum-dot-based solar cells because of their large energy gap. Their small size and visible or near infrared light-emitting property make them attractive to the applications of biological fluorescence labeling. Through a modified organometallic route, we can synthesize lead sulfide quantum dots as small as 1.6 nm in diameter. The low reaction temperature and the addition of a chloroalkane cosolvent decrease the reaction rate, making it possible to obtain the ultrasmall quantum dots. - Highlights: • Ultrasmall colloidal PbS quantum dots as small as 1.6 nm in diameter are synthesized. • The quantum dots emit red light with photoluminescence peak at 760 nm. • The growth temperature is as low as 50 °C. • Addition of cosolvent 1,2-dichloroethane in the reaction decreases the reaction rate.
Andreev molecules in semiconductor nanowire double quantum dots.
Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M
2017-09-19
Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.
Phonons in Quantum-Dot Quantum Well
Institute of Scientific and Technical Information of China (English)
QINGuo-Yi
2004-01-01
Phonon modes of A1As/GaAs/A1As and GaAs/A1As/metal Pb quantum-dot quantum wells (QDQW's) with the whole scale up to 90 AО are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AlAs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (Г)-like modes of QDQW's that have maximum bulk GaAs-LO (Г) parentages in all modes covering thewhole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting thestructure parameters. In A1As/GaAs/A1As, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/A1As/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model The frequency spectra in both GaAs-like andAlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 AО Defects at metal/A1As interface have significant influence to AlAs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.
Phonons in Quantum-Dot Quantum Well
Institute of Scientific and Technical Information of China (English)
QIN Guo-Yi
2004-01-01
Phonon modes of AlAs/GaAs/AlAs and GaAs/AlAs/metal Pb quantum-dot quantum wells (QDQW's)with the whole scale up to 90 A are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AMs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (F)-like modes of QDQW's that have maximum bulk GaAs-LO (F) parentages in all modes covering the whole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting the structure parameters. In AlAs/GaAs/AlAs, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/AMs/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model. The frequency spectra in both GaAs-like and AlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 A. Defects at metal/AlAs interface have significant influence to AMs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.
Tkach, N V; Zegrya, G G
2002-01-01
The theoretical investigation of the spectrum of electrons, holes, and excitons in the superlattice of cylindrical quantum dots with weakest coupling of quasiparticles between vertical layers of quantum dots is carried out. The calculations are fulfilled by the example of cylindrical quantum dots of beta-HgS introduced into beta-CdS as the superlattice. It is shown that electron and hole in such system form quasi-two-dimensional energy minibands, but excitons are described by the Sugano-Shinada model. The dependence of quasiparticle spectra on geometric parameters of the superlattice with cylindrical quantum dots is studied. It is shown that the position of minibands of all quasiparticles is very sensitive to variation of the quantum dot height
Energy Technology Data Exchange (ETDEWEB)
Morris-cohen, Adam J [Northwestern University, Evanston; Vasilenko, Vladislav [Northwestern University, Evanston; Amin, Victor A [Northwestern University, Evanston; Reuter, Matthew G [ORNL; Weiss, Emily A [Northwestern University, Evanston
2012-01-01
A study of the adsorption equilibrium of solution-phase CdS quantum dots (QDs) and acid-derivatized viologen ligands (N-[1-heptyl],N'-[3-carboxypropyl]-4,4'-bipyridinium dihexafluorophosphate, V{sup 2+}) reveals that the structure of the surfaces of the QDs depends on their concentration. This adsorption equilibrium is monitored through quenching of the photoluminescence of the QDs by V{sup 2+} upon photoinduced electron transfer. When modeled with a simple Langmuir isotherm, the equilibrium constant for QD-V{sup 2+} adsorption, K{sub a}, increases from 6.7 x 10{sup 5} to 8.6 x 10{sup 6} M{sup -1} upon decreasing the absolute concentration of the QDs from 1.4 x 10{sup 6} to 5.1 x 10{sup 8} M. The apparent increase in K{sub a} upon dilution results from an increase in the mean number of available adsorption sites per QD from 1.1 (for [QD] = 1.4 x 10{sup 6} M) to 37 (for [QD] = 5.1 x 10{sup 8} M) through desorption of native ligands from the surfaces of the QDs and through disaggregation of soluble QD clusters. A new model based on the Langmuir isotherm that treats both the number of adsorbed ligands per QD and the number of available binding sites per QD as binomially distributed quantities is described. This model yields a concentration-independent value for K{sub a} of 8.7 x 10{sup 5} M{sup -1} for the QD-V{sup 2+} system and provides a convenient means for quantitative analysis of QD-ligand adsorption in the presence of competing surface processes.
POLARON IN CYLINDRICAL AND SPHERICAL QUANTUM DOTS
Directory of Open Access Journals (Sweden)
L.C.Fai
2004-01-01
Full Text Available Polaron states in cylindrical and spherical quantum dots with parabolic confinement potentials are investigated applying the Feynman variational principle. It is observed that for both kinds of quantum dots the polaron energy and mass increase with the increase of Frohlich electron-phonon coupling constant and confinement frequency. In the case of a spherical quantum dot, the polaron energy for the strong coupling is found to be greater than that of a cylindrical quantum dot. The energy and mass are found to be monotonically increasing functions of the coupling constant and the confinement frequency.
Activation of silicon quantum dots for emission
Institute of Scientific and Technical Information of China (English)
Huang Wei-Qi; Miao Xin-Jian; Huang Zhong-Mei; Liu Shi-Rong; Qin Chao-Jian
2012-01-01
The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs.From this point of view,we can build up radiative matter for emission.Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots.Our experimental results demonstrate that annealing is important in the treatment of the activation,and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.
Synthetic Developments of Nontoxic Quantum Dots.
Das, Adita; Snee, Preston T
2016-03-03
Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems.
Perovskite Quantum Dots Modeled Using ab Initio and Replica Exchange Molecular Dynamics
Buin, Andrei
2015-06-18
© 2015 American Chemical Society. Organometal halide perovskites have recently attracted tremendous attention at both the experimental and theoretical levels. Much of this work has been dedicated to bulk material studies, yet recent experimental work has shown the formation of highly efficient quantum-confined nanocrystals with tunable band edges. Here we investigate perovskite quantum dots from theory, predicting an upper bound of the Bohr radius of 45 Å that agrees well with literature values. When the quantum dots are stoichiometric, they are trap-free and have nearly symmetric contributions to confinement from the valence and conduction bands. We further show that surface-associated conduction bandedge states in perovskite nanocrystals lie below the bulk states, which could explain the difference in Urbach tails between mesoporous and planar perovskite films. In addition to conventional molecular dynamics (MD), we implement an enhanced phase-space sampling algorithm, replica exchange molecular dynamics (REMD). We find that in simulation of methylammonium orientation and global minima, REMD outperforms conventional MD. To the best of our knowledge, this is the first REMD implementation for realistic-sized systems in the realm of DFT calculations.
Spin transport through quantum dots
Energy Technology Data Exchange (ETDEWEB)
Lima, A.T. da Cunha; Anda, Enrique V. [Pontificia Univ. Catolica do Rio de Janeiro (PUC-Rio), RJ (Brazil)
2003-07-01
Full text: We investigate the spin polarized transport properties of a nanoscopic device constituted by a quantum dot connected to two leads. The electrical current circulates with a spin polarization that is modulated via a gate potential that controls the intensity of the spin-orbit coupling, the Rashba effect. We study a polarized field-effect transistor when one of its parts is constituted by a small quantum dot, which energies are controlled by another gate potential operating inside the confined region. The high confinement and correlation suffered by the charges inside the dot gives rise to novel phenomena. We show that through the manipulation of the gate potential applied to the dot it is possible to control, in a very efficient way, the intensity and polarization of the current that goes along the system. Other crucial parameters to be varied in order to understand the behavior of this system are the intensity of the external applied electric and magnetic field. The system is represented by the Anderson Impurity Hamiltonian summed to a spin-orbit interaction, which describes the Rashba effect. To obtain the current of this out-of-equilibrium system we use the Keldysh formalism.The solution of the Green function are compatible with the Coulomb blockade regime. We show that under the effect of a external magnetic field, if the dot is small enough the device operates as a complete spin filter that can be controlled by the gate potential. The behavior of this device when it is injected into it a polarized current and modulated by the Rashba effect is as well studied. (author)
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....
Quantum Optics with Quantum Dots in Photonic Nanowires
DEFF Research Database (Denmark)
Gérard, J.-M.; Claudon, J.; Bleuse, J.;
2011-01-01
We review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....
Chiral quantum dot based materials
Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii
2014-05-01
Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.
Modeling on the size dependent properties of InP quantum dots: a hybrid functional study
Cho, Eunseog; Jang, Hyosook; Lee, Junho; Jang, Eunjoo
2013-05-01
Theoretical calculations based on density functional theory were performed to provide better understanding of the size dependent electronic properties of InP quantum dots (QDs). Using a hybrid functional approach, we suggest a reliable analytical equation to describe the change of energy band gap as a function of size. Synthesizing colloidal InP QDs with 2-4 nm diameter and measuring their optical properties was also carried out. It was found that the theoretical band gaps showed a linear dependence on the inverse size of QDs and gave energy band gaps almost identical to the experimental values.
Quantum Dot Spectrum Converters for Enhanced High Efficiency Photovoltaics Project
National Aeronautics and Space Administration — This research proposes to enhance solar cell efficiency, radiation resistance and affordability. The Quantum Dot Spectrum Converter (QDSC) disperses quantum dots...
Exciton in type-II quantum dot
Energy Technology Data Exchange (ETDEWEB)
Sierra-Ortega, J; Escorcia, R A [Universidad del Magdalena, A. A. 731, Santa Marta (Colombia); Mikhailov, I D, E-mail: jsierraortega@gmail.co [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia)
2009-05-01
We study the quantum-size effect and the influence of the external magnetic field on the exciton ground state energy in the type-II InP quantum disk, lens and pyramid deposited on a wetting layer and embedded in a GaInP matrix. We show that the charge distribution over and below quantum dot and wetting layer induced by trapped exciton strongly depends on the quantum dot morphology and the strength of the magnetic field.
Becker, M. D.; Wang, Y.; Pennell, K. D.; Abriola, L. M.
2011-12-01
As the manufacture and use of nanomaterials become more prevalent, the development of mathematical models capable of predicting nanomaterial transport and retention in subsurface systems is crucial to assessing their environmental fate. To enhance aqueous solubility, nanoparticle production often involves the use of a surfactant or other stabilizing agent. The presence of stabilizing agents, whether natural or synthetic, could significantly influence nanoparticle mobility and fate in the subsurface. In this study, quantum dot (QD) mobility experiments were performed in columns packed with three size fractions of Ottawa sand (d50 = 125, 165, and 335 μm) at two different pore-water velocities (0.8 m/d and 7.6 m/d). The QDs synthesized for these experiments consisted of a CdSe core embedded in a CdZnS shell with a poly(acrylic acid)-octylamine (PAA) coating to promote suspension stability. The QDs were negatively charged (measured zeta potential ca. -35 mV) with a hydrodynamic diameter of approximately 30 nm. Experimental observations consistently revealed low amounts of QD deposition near the column inlet, results that were inconsistent with expectations based upon clean bed filtration theory. This phenomenon was hypothesized to be related to competitive adsorption of residual aqueous PAA to the sand surface. A systematic modeling approach was undertaken to explore mechanisms controlling the transport and deposition of QDs in the presence of competitively adsorbing aqueous PAA. The model incorporated a coupled system of equations governing the fate and transport of both nanoparticles and chemical additives. QD retention was described using a modification of a traditional clean bed filtration governing equation that assumes irreversible first-order attachment and incorporates a maximum or limiting retention capacity. Simultaneous transport and adsorption of PAA were modeled using a traditional advection-dispersion-reaction equation that incorporates a first
Colloidal quantum dot photodetectors
Konstantatos, Gerasimos
2011-05-01
We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.
Optical studies of capped quantum dots
Wuister, S.F.
2005-01-01
This thesis describes the synthesis and spectroscopy of CdSe and CdTe semiconductor quantum dots (QDs). The first chapter gives an introduction into the unique size dependent properties of semiconductor quantum dots. Highly luminescent QDs of CdSe and CdTe were prepared via a high temperature method
Detecting the chirality for coupled quantum dots
Energy Technology Data Exchange (ETDEWEB)
Cao Huijuan [Institute for Condensed Matter Physics, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China); Hu Lian [Institute for Condensed Matter Physics, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: huliancaohj@yahoo.com
2008-04-21
We propose a scheme to detect the chirality for a system consisting of three coupled quantum dots. The chirality is found to be determined by the frequency of the transition between chiral states under the chiral symmetry broken perturbation. The results are important to construct quantum gates and to demonstrate chiral entangle states in the triangle spin dots.
Research on Self-Assembling Quantum Dots.
1995-10-30
0K. in a second phase of this contract we turned our efforts to the fabrication and studies of self assembled quantum dots . We first demonstrated a...method for producing InAs-GasAs self assembled quantum dots (SAD) using MBE. (AN)
Thick-shell nanocrystal quantum dots
Hollingsworth, Jennifer A.; Chen, Yongfen; Klimov, Victor I.; Htoon, Han; Vela, Javier
2011-05-03
Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.
Optical Properties of Semiconductor Quantum Dots
Perinetti, U.
2011-01-01
This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots
Optical Properties of Semiconductor Quantum Dots
Perinetti, U.
2011-01-01
This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots mad
Ultrafast optical signal processing using semiconductor quantum dot amplifiers
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper
2002-01-01
The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....
Quantum-dot supercrystals for future nanophotonics
Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.
2013-01-01
The study of supercrystals made of periodically arranged semiconductor quantum dots is essential for the advancement of emerging nanophotonics technologies. By combining the strong spatial confinement of elementary excitations inside quantum dots and exceptional design flexibility, quantum-dot supercrystals provide broad opportunities for engineering desired optical responses and developing superior light manipulation techniques on the nanoscale. Here we suggest tailoring the energy spectrum and wave functions of the supercrystals' collective excitations through the variation of different structural and material parameters. In particular, by calculating the excitonic spectra of quantum dots assembled in two-dimensional Bravais lattices we demonstrate a wide variety of spectrum transformation scenarios upon alterations in the quantum dot arrangement. This feature offers unprecedented control over the supercrystal's electromagnetic properties and enables the development of new nanophotonics materials and devices.
Biocompatible quantum dots for biological applications.
Rosenthal, Sandra J; Chang, Jerry C; Kovtun, Oleg; McBride, James R; Tomlinson, Ian D
2011-01-28
Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, size-tunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots.
Energy Technology Data Exchange (ETDEWEB)
Kotd, Amer, E-mail: amer_22003@yahoo.com, E-mail: kotb@phys.uconn.edu [Department of Physics, Faculty of Science, Fayoum University, Fayoum, (Egypt)
2015-06-15
The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach-Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs' parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s. (author)
Ikhdair, Sameer M
2011-01-01
We obtain the exact energy spectra and corresponding wave functions of the radial Schr\\"odinger equation (RSE) for any (n,l) state in the presence of a combination of psudoharmonic, Coulomb and linear confining potential terms using an exact analytical iteration method. The interaction potential model under consideration is Cornell-modified plus harmonic (CMpH) type which is a correction form to the harmonic, Coulomb and linear confining potential terms. It is used to investigates the energy of electron in spherical quantum dot and the heavy quarkonia (QQ-onia).
Electron Energy Level Statistics in Graphene Quantum Dots
De Raedt, H.; Katsnellson, M. I.; Katsnelson, M.I.
2008-01-01
Motivated by recent experimental observations of size quantization of electron energy levels in graphene quantum dots [7] we investigate the level statistics in the simplest tight-binding model for different dot shapes by computer simulation. The results are in a reasonable agreement with the experi
Tailoring Magnetism in Quantum Dots
Zutic, Igor; Abolfath, Ramin; Hawrylak, Pawel
2007-03-01
We study magnetism in magnetically doped quantum dots as a function of particle numbers, temperature, confining potential, and the strength of Coulomb interaction screening. We show that magnetism can be tailored by controlling the electron-electron Coulomb interaction, even without changing the number of particles. The interplay of strong Coulomb interactions and quantum confinement leads to enhanced inhomogeneous magnetization which persists at substantially higher temperatures than in the non-interacting case or in the bulk-like dilute magnetic semiconductors. We predict a series of electronic spin transitions which arise from the competition between the many-body gap and magnetic thermal fluctuations. Cond-mat/0612489. [1] R. Abolfath, P. Hawrylak, I. Zuti'c, preprint.
Deng, Dawei; Chen, Xinyang; Zhang, Jian; Liu, Fei; Cao, Jie; Gu, Yueqing
2010-02-01
In this paper, we present a new facile and environmental friendly method to prepare water-soluble near-infrared (NIR)-emitting PbS quantum dots (QDs) at room temperature under ambient conditions, using dihydrolipoic acid (DHLA) as a stabilizer. The photoluminescence (PL) emissions of the prepared DHLA-capped PbS QDs are tunable between 870 and 1010 nm. A PL quantum yield (QY) of ~10% can be achieved under optimized conditions without any post-preparative treatment. Here, we further use the produced DHLA-capped PbS QDs for NIR fluorescence imaging in a mouse model. The obtained experimental results showed that the NIR fluorescence of the PbS QDs in living tissues generated from the excitation with semiconductor laser (λmax=765.9 nm) could penetrate living tissues and be detected easily by the noninvasive in vivo NIR fluorescence imaging system. In addition, the preliminary studies on the cytotoxicity and in vivo toxicity of the QDs also indicates fully that these water-soluble DHLA-capped PbS QDs are very lowly toxic, and as such they should have greater potential in biological and medical applications especially in noninvasive in vivo fluorescence imaging of mice, compared to other existing highly toxic aqueous NIR-emitting quantum dots (CdTe, HgTe, etc).
Coherent optoelectronics with single quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de
2008-11-12
The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.
Coherent optoelectronics with single quantum dots
Zrenner, A.; Ester, P.; Michaelis de Vasconcellos, S.; Hübner, M. C.; Lackmann, L.; Stufler, S.; Bichler, M.
2008-11-01
The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.
Quantum dot devices for optical communications
DEFF Research Database (Denmark)
Mørk, Jesper
2005-01-01
. The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record......-low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties...
Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers
Cartar, William; Mørk, Jesper; Hughes, Stephen
2017-08-01
We present a powerful computational approach to simulate the threshold behavior of photonic-crystal quantum-dot (QD) lasers. Using a finite-difference time-domain (FDTD) technique, Maxwell-Bloch equations representing a system of thousands of statistically independent and randomly positioned two-level emitters are solved numerically. Phenomenological pure dephasing and incoherent pumping is added to the optical Bloch equations to allow for a dynamical lasing regime, but the cavity-mediated radiative dynamics and gain coupling of each QD dipole (artificial atom) is contained self-consistently within the model. These Maxwell-Bloch equations are implemented by using Lumerical's flexible material plug-in tool, which allows a user to define additional equations of motion for the nonlinear polarization. We implement the gain ensemble within triangular-lattice photonic-crystal cavities of various length N (where N refers to the number of missing holes), and investigate the cavity mode characteristics and the threshold regime as a function of cavity length. We develop effective two-dimensional model simulations which are derived after studying the full three-dimensional passive material structures by matching the cavity quality factors and resonance properties. We also demonstrate how to obtain the correct point-dipole radiative decay rate from Fermi's golden rule, which is captured naturally by the FDTD method. Our numerical simulations predict that the pump threshold plateaus around cavity lengths greater than N =9 , which we identify as a consequence of the complex spatial dynamics and gain coupling from the inhomogeneous QD ensemble. This behavior is not expected from simple rate-equation analysis commonly adopted in the literature, but is in qualitative agreement with recent experiments. Single-mode to multimode lasing is also observed, depending on the spectral peak frequency of the QD ensemble. Using a statistical modal analysis of the average decay rates, we also
Electron transport in quantum dots
2003-01-01
When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...
2010-07-01
H. Li, K. J. Malloy, and L. F. Lester, “Extremely low room-temperature threshold current density diode lasers using InAs dots in In0 .15Ga0 .85As...Fuchs, K. J. Malloy, and L. F. Lester, “Gain and linewidth enhancement factor in InAs quantum-dot laser diodes ,” IEEE Photon. Tech. Lett., vol. 11, no...device physics, and fabrication and characterization of semiconduc- tor quantum-dot light emitters that include mode- locked laser and superluminescent
Colloidal quantum dot photovoltaics: The effect of polydispersity
Zhitomirsky, David
2012-02-08
The size-effect tunability of colloidal quantum dots enables facile engineering of the bandgap at the time of nanoparticle synthesis. The dependence of effective bandgap on nanoparticle size also presents a challenge if the size dispersion, hence bandgap variability, is not well-controlled within a given quantum dot solid. The impact of this polydispersity is well-studied in luminescent devices as well as in unipolar electronic transport; however, the requirements on monodispersity have yet to be quantified in photovoltaics. Here we carry out a series of combined experimental and model-based studies aimed at clarifying, and quantifying, the importance of quantum dot monodispersity in photovoltaics. We successfully predict, using a simple model, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using this same experimentally tested model the implications of a broadened quantum dot population on device performance. We report that present-day colloidal quantum dot photovoltaic devices with typical inhomogeneous linewidths of 100-150 meV are dominated by surface traps, and it is for this reason that they see marginal benefit from reduction in polydispersity. Upon eliminating surface traps, achieving inhomogeneous broadening of 50 meV or less will lead to device performance that sees very little deleterious impact from polydispersity. © 2012 American Chemical Society.
Intraband Relaxation and Its Influences on Quantum Dot Lasers
Institute of Scientific and Technical Information of China (English)
DENG Sheng-Ling; HUANG Yong-Zhen; YU Li-Juan
2005-01-01
@@ A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2ps, 7.5ps and 20ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.
Quantum Computing with Electron Spins in Quantum Dots
Vandersypen, L M K; Van Beveren, L H W; Elzerman, J M; Greidanus, J S; De Franceschi, S; Kouwenhoven, Leo P
2002-01-01
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of electron charges on the dot via a charge detector. Single-qubit manipulation relies on a microfabricated wire located close to the quantum dot, and two-qubit interactions are controlled via the tunnel barrier connecting the respective quantum dots. Based on these ideas, we have begun a series of experiments in order to demonstrate unitary control and to measure the coherence time of individual electron spins in quantum dots.
Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy
Energy Technology Data Exchange (ETDEWEB)
Hernandez-Maldonado, D., E-mail: david.hernandez@uca.es [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Herrera, M.; Sales, D.L. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L. [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid (Spain); Pizarro, J.; Galindo, P.L. [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Molina, S.I. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)
2010-07-01
The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.
Quantum dots with single-atom precision.
Fölsch, Stefan; Martínez-Blanco, Jesús; Yang, Jianshu; Kanisawa, Kiyoshi; Erwin, Steven C
2014-07-01
Quantum dots are often called artificial atoms because, like real atoms, they confine electrons to quantized states with discrete energies. However, although real atoms are identical, most quantum dots comprise hundreds or thousands of atoms, with inevitable variations in size and shape and, consequently, unavoidable variability in their wavefunctions and energies. Electrostatic gates can be used to mitigate these variations by adjusting the electron energy levels, but the more ambitious goal of creating quantum dots with intrinsically digital fidelity by eliminating statistical variations in their size, shape and arrangement remains elusive. We used a scanning tunnelling microscope to create quantum dots with identical, deterministic sizes. By using the lattice of a reconstructed semiconductor surface to fix the position of each atom, we controlled the shape and location of the dots with effectively zero error. This allowed us to construct quantum dot molecules whose coupling has no intrinsic variation but could nonetheless be tuned with arbitrary precision over a wide range. Digital fidelity opens the door to quantum dot architectures free of intrinsic broadening-an important goal for technologies from nanophotonics to quantum information processing as well as for fundamental studies of confined electrons.
Electro-absorption of silicene and bilayer graphene quantum dots
Abdelsalam, Hazem; Talaat, Mohamed H.; Lukyanchuk, Igor; Portnoi, M. E.; Saroka, V. A.
2016-07-01
We study numerically the optical properties of low-buckled silicene and AB-stacked bilayer graphene quantum dots subjected to an external electric field, which is normal to their surface. Within the tight-binding model, the optical absorption is calculated for quantum dots, of triangular and hexagonal shapes, with zigzag and armchair edge terminations. We show that in triangular silicene clusters with zigzag edges a rich and widely tunable infrared absorption peak structure originates from transitions involving zero energy states. The edge of absorption in silicene quantum dots undergoes red shift in the external electric field for triangular clusters, whereas blue shift takes place for hexagonal ones. In small clusters of bilayer graphene with zigzag edges the edge of absorption undergoes blue/red shift for triangular/hexagonal geometry. In armchair clusters of silicene blue shift of the absorption edge takes place for both cluster shapes, while red shift is inherent for both shapes of the bilayer graphene quantum dots.
Ramos, E.; Silva-Valencia, J.; Franco, R.; Siqueira, E. C.; Figueira, M. S.
2015-11-01
We study the spin-current Seebeck effect through an immersed gate defined quantum dot, employing the U-finite atomic method for the single impurity Anderson model. Our description qualitatively confirms some of the results obtained by an earlier Hartree-Fock work, but as our calculation includes the Kondo effect, some new features will appear in the spin-current Seebeck effect S, which as a function of the gate voltage present an oscillatory shape. At intermediate temperatures, our results show a three zero structure and at low temperatures, our results are governed by the emergence of the Kondo peak in the transmittance, which defines the behavior of the shape of the S coefficient as a function of the parameters of the model. The oscillatory behavior obtained by the Hartree-Fock approximation reproduces the shape obtained by us in a non-interacting system (U=0). The S sign is sensitive to different polarization of the quantum dot, and as a consequence the device could be employed to experimentally detect the polarization states of the system. Our results also confirm that the large increase of S upon increasing U, obtained by the mean field approximation, is correct only for low temperatures. We also discuss the role of the Kondo peak in defining the behavior of the spin thermopower at low temperatures.
A triple quantum dot in a single-wall carbon nanotube
DEFF Research Database (Denmark)
Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.
2008-01-01
A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams....... Simulations using a capacitor model including tunnel coupling between neighboring dots captures the observed behavior with good agreement. Furthermore, anticrossings between indirectly coupled levels and higher order cotunneling are discussed. Udgivelsesdato: April...
Large quantum dots with small oscillator strength
DEFF Research Database (Denmark)
Stobbe, Søren; Schlereth, T.W.; Höfling, S.
2010-01-01
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... oscillator strength due to Coulomb effects. This is in stark contrast to the measured oscillator strength, which turns out to be so small that it can be described by excitons in the strong confinement regime. We attribute these findings to exciton localization in local potential minima arising from alloy...
Quantum dot devices for optical communications
DEFF Research Database (Denmark)
Mørk, Jesper
2005-01-01
Semiconductor quantum dots are often described as "artificial atoms": They are small nanometre-sized structures in which electrons only are allowed to exist at certain discrete levels due to size quantization, thus allowing the engineering of fundamental properties such as the coupling to light....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record......-low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties...
Scanning gate microscopy of ultra clean carbon nanotube quantum dots
Xue, Jiamin; Dhall, Rohan; Cronin, Stephen B.; LeRoy, Brian J.
2015-01-01
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can b...
Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study
Directory of Open Access Journals (Sweden)
Stephan Michael
2016-05-01
Full Text Available In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. Here, we study the influence of two important quantum-dot material parameters, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density can compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. However, by minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.
Quantum dots for terahertz generation
Energy Technology Data Exchange (ETDEWEB)
Liu, H C; Aslan, B; Gupta, J A; Wasilewski, Z R; Aers, G C; SpringThorpe, A J; Buchanan, M [Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6 (Canada)], E-mail: h.c.liu@nrc.ca
2008-09-24
Nanostructures made of semiconductors, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in practical devices. Here we focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc, make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self-assembled InAs QDs in an undoped GaAs matrix, with a design incorporating a GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double-barrier resonant tunneling structure are discussed.
Electronic properties of aperiodic quantum dot chains
Korotaev, P. Yu.; Vekilov, Yu. Kh.; Kaputkina, N. E.
2012-04-01
The electronic spectral and transport properties of aperiodic quantum dot chains are investigated. The systems with singular continuous energy spectrum are considered: Thue-Morse chain, double-periodic chain, Rudin-Shapiro chain. The influence of electronic energy in quantum dot on the spectral properties, band structure, density of states and spectral resistivity, is discussed. Low resistivity regions correspond to delocalized states and these states could be current states. Also we discuss the magnetic field application as the way to tune electronic energy in quantum dot and to obtain metallic or insulating conducting states of the systems.
Amplification Without Inversion in Semiconductor Quantum Dot
Hajibadali, A.; Abbasian, K.; Rostami, A.
In this paper, we have realized amplification without inversion (AWI) in quantum dot (QD). A Y-type four-level system of InxGa1-xN quantum dot has been obtained and investigated for AWI. It has been shown that, with proper setting of control fields' amplitude, we can obtain reasonable gain. With proper setting of phase difference of control fields and probe field, we can obtain considerable gain in resonant wavelength. We have designed this system by solving the Schrödinger-Poisson equations for InxGa1-xN quantum dot in GaN substrate, self-consistently.
Time-bin Entanglement from Quantum Dots
Weihs, Gregor; Predojević, Ana
2016-01-01
The desire to have a source of single entangled photon pairs can be satisfied using single quantum dots as emitters. However, we are not bound to pursue only polarization entanglement, but can also exploit other degrees of freedom. In this chapter we focus on the time degree of freedom, to achieve so-called time-bin entanglement. This requires that we prepare the quantum dot coherently into the biexciton state and also build special interferometers for analysis. Finally this technique can be extended to achieve time-bin and polarization hyper-entanglement from a suitable quantum dot.
Fluorescent Quantum Dots for Biological Labeling
McDonald, Gene; Nadeau, Jay; Nealson, Kenneth; Storrie-Lomardi, Michael; Bhartia, Rohit
2003-01-01
Fluorescent semiconductor quantum dots that can serve as "on/off" labels for bacteria and other living cells are undergoing development. The "on/off" characterization of these quantum dots refers to the fact that, when properly designed and manufactured, they do not fluoresce until and unless they come into contact with viable cells of biological species that one seeks to detect. In comparison with prior fluorescence-based means of detecting biological species, fluorescent quantum dots show promise for greater speed, less complexity, greater sensitivity, and greater selectivity for species of interest. There are numerous potential applications in medicine, environmental monitoring, and detection of bioterrorism.
Ihly, Rachelle
2014-01-01
This thesis explores the understanding of the chemistry and physics of colloidal quantum dots for practical solar energy photoconversion. Solar cell devices that make use of PbS quantum dots generally rely on constant and unchanged optical properties such that band gap energies remain tuned within the device. The design and development of unique experiments to ascertain mechanisms of optical band gap shifts occurring in PbS quantum dot thin-films exposed to air are discussed. The systematic s...
Quantum Dots in Vertical Nanowire Devices
Van Weert, M.
2010-01-01
The research described in this thesis is aimed at constructing a quantum interface between a single electron spin and a photon, using a nanowire quantum dot. Such a quantum interface enables information transfer from a local electron spin to the polarization of a photon for long distance readout.
Nonrenewal statistics in transport through quantum dots
Ptaszyński, Krzysztof
2017-01-01
The distribution of waiting times between successive tunneling events is an already established method to characterize current fluctuations in mesoscopic systems. Here, I investigate mechanisms generating correlations between subsequent waiting times in two model systems, a pair of capacitively coupled quantum dots and a single-level dot attached to spin-polarized leads. Waiting time correlations are shown to give insight into the internal dynamics of the system; for example they allow distinction between different mechanisms of the noise enhancement. Moreover, the presence of correlations breaks the validity of the renewal theory. This increases the number of independent cumulants of current fluctuation statistics, thus providing additional sources of information about the transport mechanism. I also propose a method for inferring the presence of waiting time correlations based on low-order current correlation functions. This method gives a way to extend the analysis of nonrenewal current fluctuations to the systems for which single-electron counting is not experimentally feasible. The experimental relevance of the findings is also discussed; for example reanalysis of previous results concerning transport in quantum dots is suggested.
Non-adiabatic geometrical quantum gates in semiconductor quantum dots
Solinas, P; Zanghì, N; Rossi, F; Solinas, Paolo; Zanardi, Paolo; Zanghì, Nino; Rossi, Fausto
2003-01-01
In this paper we study the implementation of non-adiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding/manipulation schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be in principle implemented
Hybrid passivated colloidal quantum dot solids
Ip, Alexander H.; Thon, Susanna M.; Hoogland, Sjoerd; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, Edward H.
2012-09-01
Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electron-hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device.
Hybrid passivated colloidal quantum dot solids
Ip, Alex
2012-07-29
Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.
Single to quadruple quantum dots with tunable tunnel couplings
Energy Technology Data Exchange (ETDEWEB)
Takakura, T.; Noiri, A.; Obata, T.; Yoneda, J.; Yoshida, K. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Otsuka, T.; Tarucha, S. [Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science, 3-1 Wako-shi, Saitama 351-0198 (Japan)
2014-03-17
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by the gate geometry. For the triple and quadruple dots, we study the gate-tunable inter-dot tunnel couplings. For the triple dot, we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot has a gate performance relevant for implementing spin-based four-qubits with controllable exchange couplings.
Lozovoy, K. A.; Pishchagin, A. A.; Kokhanenko, A. P.; Voitsekhovskii, A. V.
2016-08-01
In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of surface energy, additional edge energy, elastic strain relaxation, and decrease in the atoms attraction to substrate. With the help of well-known model based on the generalization of classical nucleation theory it was shown that elongated islands emerge later than pyramidal clusters. Calculations of QDs surface density and size distribution function for wedge-like clusters with different length to width ratio were performed. The absence of special geometry of islands for which surface density and average size of islands reach points of extremum that was predicted earlier by the model not taking into account energy of edges was revealed when considering the additional contribution of edge formation energy.
Quantum Dots Investigated for Solar Cells
Bailey, Sheila G.; Castro, Stephanie L.; Raffaelle, Ryne P.; Hepp, Aloysius F.
2001-01-01
The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in
Optical anisotropy in vertically coupled quantum dots
DEFF Research Database (Denmark)
Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan;
1999-01-01
We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....
Double Acceptor Interaction in Semimagnetic Quantum Dot
Directory of Open Access Journals (Sweden)
A. Merwyn Jasper D. Reuben
2011-01-01
Full Text Available The effect of geometry of the semimagnetic Quantum Dot on the Interaction energy of a double acceptor is computed in the effective mass approximation using the variational principle. A peak is observed at the lower dot sizes as a magnetic field is increased which is attributed to the reduction in confinement.
Quantum Dots Coupled to a Superconductor
DEFF Research Database (Denmark)
Jellinggaard, Anders Robert
are tuned electrostatically. This includes tuning the odd occupation of the dot through a quantum phase transition, where it forms a singlet with excitations in the superconductor. We detail the fabrication of these bottom gated devices, which additionally feature ancillary sensor dots connected...
Ge Quantum Dot Infrared Imaging Camera Project
National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...
Quantum computation with nuclear spins in quantum dots
Energy Technology Data Exchange (ETDEWEB)
Christ, H.
2008-01-24
The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin
Chaotic quantum dots with strongly correlated electrons
Shankar, R.
2007-01-01
Quantum dots pose a problem where one must confront three obstacles: randomness, interactions and finite size. Yet it is this confluence that allows one to make some theoretical advances by invoking three theoretical tools: Random Matrix theory (RMT), the Renormalization Group (RG) and the 1/N expansion. Here the reader is introduced to these techniques and shown how they may be combined to answer a set of questions pertaining to quantum dots
Start Shift of Individual Quantum Dots
1999-06-18
We will here describe the results of the influence of electric field on InP quantum dots embedded in GalnP, lattice matched to GaAs. Experimental...details The sample we used was grown by metal-organic vapour phase epitaxy, and contained InP quantum dots in GanP, lattice matched to GaAs (n-type
Germanium quantum dots: Optical properties and synthesis
Heath, James R.; Shiang, J. J.; Alivisatos, A. P.
1994-01-01
Three different size distributions of Ge quantum dots (>~200, 110, and 60 Å) have been synthesized via the ultrasonic mediated reduction of mixtures of chlorogermanes and organochlorogermanes (or organochlorosilanes) by a colloidal sodium/potassium alloy in heptane, followed by annealing in a sealed pressure vessel at 270 °C. The quantum dots are characterized by transmission electron microscopy, x-ray powder diffraction, x-ray photoemission, infrared spectroscopy, and Raman spectroscopy. Col...
Renormalization in Periodically Driven Quantum Dots.
Eissing, A K; Meden, V; Kennes, D M
2016-01-15
We report on strong renormalization encountered in periodically driven interacting quantum dots in the nonadiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of the interaction. Employing a newly developed flexible renormalization-group-based approach for periodic driving to an interacting resonant level we show analytically that the magnitude of this effect follows a power law. Our setup can act as a non-Markovian, single-parameter quantum pump.
Submonolayer Quantum Dot Infrared Photodetector
Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang
2010-01-01
A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.
Quantum dots as biophotonics tools.
Cesar, Carlos L
2014-01-01
This chapter provides a short review of quantum dots (QDs) physics, applications, and perspectives. The main advantage of QDs over bulk semiconductors is the fact that the size became a control parameter to tailor the optical properties of new materials. Size changes the confinement energy which alters the optical properties of the material, such as absorption, refractive index, and emission bands. Therefore, by using QDs one can make several kinds of optical devices. One of these devices transforms electrons into photons to apply them as active optical components in illumination and displays. Other devices enable the transformation of photons into electrons to produce QDs solar cells or photodetectors. At the biomedical interface, the application of QDs, which is the most important aspect in this book, is based on fluorescence, which essentially transforms photons into photons of different wavelengths. This chapter introduces important parameters for QDs' biophotonic applications such as photostability, excitation and emission profiles, and quantum efficiency. We also present the perspectives for the use of QDs in fluorescence lifetime imaging (FLIM) and Förster resonance energy transfer (FRET), so useful in modern microscopy, and how to take advantage of the usually unwanted blinking effect to perform super-resolution microscopy.
Nano-laser on silicon quantum dots
Huang, Wei-Qi; Liu, Shi-Rong; Qin, Chao-Jian; Lü, Quan; Xu, Li
2011-04-01
A new conception of nano-laser is proposed in which depending on the size of nano-clusters (silicon quantum dots (QD)), the pumping level of laser can be tuned by the quantum confinement (QC) effect, and the population inversion can be formed between the valence band and the localized states in gap produced from the surface bonds of nano-clusters. Here we report the experimental demonstration of nano-laser on silicon quantum dots fabricated by nanosecond pulse laser. The peaks of stimulated emission are observed at 605 nm and 693 nm. Through the micro-cavity of nano-laser, a full width at half maximum of the peak at 693 nm can reach to 0.5 nm. The theoretical model and the experimental results indicate that it is a necessary condition for setting up nano-laser that the smaller size of QD (d nano-laser will be limited in the range of 1.7-2.3 eV generally due to the position of the localized states in gap, which is in good agreement between the experiments and the theory.
Quantum dot growth on a stripe-pattern
Energy Technology Data Exchange (ETDEWEB)
Xu, X.; Aqua, J.-N., E-mail: aqua@insp.jussieu.fr
2013-09-30
We study the development of the Asaro-Tiller-Grinfel'd instability on a thin strained film on top of a stripe-patterned substrate and the subsequent growth of self-organized quantum dots. We use a continuum model describing the evolution equation enforced by surface diffusion. We compute the elastic energy up to the first non-linear order and investigate the long time dynamics which describes the dot growth. We find different island locations depending on the substrate wavelength and thickness. As found in experiments, the instability long-time dynamics leads to islands located either on top or in the bottom of the pattern. - Highlights: • Growth of quantum dots on a stripe-pattern dictated by kinetics • Effect of the time for quantum dot growth on their location • Time-dependant self-organization • Non-linear analysis and link with the linear regime.
Carbon nanotube quantum dots as highly sensitive THz spectrometers
Rinzan, Mohamed; Jenkins, Greg; Drew, Dennis; Shafranjuk, Serhii; Barbara, Paola
2012-02-01
We show that carbon nanotube quantum dots (CNT-Dots) coupled to antennas are extremely sensitive, broad-band, terahertz quantum detectors. Their response is due to photon-assisted single-electron tunneling (PASET)[1], but cannot be fully understood with orthodox PASET models[2]. We consider intra-dot excitations and non-equilibrium cooling to explain the anomalous response. REFERENCES: [1] Y. Kawano, S. Toyokawa, T. Uchida and K. Ishibashi, THz photon assisted tunneling in carbon-nanotube quantum dots, Journal of Applied Physics 103, 034307 (2008). [2] P. K. Tien and J. P. Gordon, Multiphoton Process Observed in the Interaction of Microwave Fields with the Tunneling between Superconductor Films, Phys. Rev. 129, 647 (1963).
Universal Quantum Gates Based on Both Geometric and Dynamic Phases in Quantum Dots
Institute of Scientific and Technical Information of China (English)
杨开宇; 朱诗亮; 汪子丹
2003-01-01
A large-scalable quantum computer model, whose qubits are represented by the subspace subtended by the ground state and the single exciton state on semiconductor quantum dots, is proposed. A universal set of quantum gates in this system may be achieved by a mixed approach, composed of dynamic evolution and nonadiabatic geometric phase.
Dan Wu; Yixin Liu; Yaoguang Wang; Lihua Hu; Hongmin Ma; Guoqin Wang; Qin Wei
2016-01-01
Prostate-specific antigen (PSA) was used as the model, an ultrasensitive label-free electrochemiluminescent immunosensor was developed based on graphene quantum dots. Au/Ag-rGO was sythsized and used as electrode material to load a great deal of graphene quantum dots due to the large surface area and excellent electron conductivity. After aminated graphene quantum dots and acarboxyl graphene quantum dots were modified onto the electrode, the ECL intensity was much high using K2S2O8 as coreact...
ENERGY LEVEL DETERMINATION AND PERFORMANCE ANALYSIS OF QUANTUM DOT PHOTO DETECTOR
Directory of Open Access Journals (Sweden)
M. Madheswaran
2013-09-01
Full Text Available The theoretical estimation of dark and illumination characteristics of InGaAs quantum dot photo detector is developed and presented in this paper. The exact potential and energy profile of the Quantum Dot is computed by obtaining the solution of 3D Poisson and Schrodinger equations using Homotopy analysis. The dark current, photo current, responsivity, detectivity and efficiency of the model are calculated by considering the structural parameters Quantum Dot density, applied voltage, length of quantum dot array, number of quantum dot array, light intensity and temperature. The results obtained show that the dark current and photo current are strongly influenced by Quantum Dot density and applied voltage. The developed model is purely physics based one and overcomes the limitations of the existing analytical models. The model is validated by comparing the results obtained with the existing models.
Thermoelectric study of dissipative quantum-dot heat engines
De, Bitan; Muralidharan, Bhaskaran
2016-10-01
This paper examines the thermoelectric response of a dissipative quantum-dot heat engine based on the Anderson-Holstein model in two relevant operating limits, (i) when the dot phonon modes are out of equilibrium, and (ii) when the dot phonon modes are strongly coupled to a heat bath. In the first case, a detailed analysis of the physics related to the interplay between the quantum-dot level quantization, the on-site Coulomb interaction, and the electron-phonon coupling on the thermoelectric performance reveals that an n -type heat engine performs better than a p -type heat engine. In the second case, with the aid of the dot temperature estimated by incorporating a thermometer bath, it is shown that the dot temperature deviates from the bath temperature as electron-phonon interaction in the dot becomes stronger. Consequently, it is demonstrated that the dot temperature controls the direction of phonon heat currents, thereby influencing the thermoelectric performance. Finally, the conditions on the maximum efficiency with varying phonon couplings between the dot and all the other macroscopic bodies are analyzed in order to reveal the nature of the optimum junction.
Quantum Dots in Photonic Crystal Waveguides
DEFF Research Database (Denmark)
Sollner, Immo Nathanael
This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate....
Quantum Dots in Photonic Crystal Waveguides
DEFF Research Database (Denmark)
Sollner, Immo Nathanael
This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate....
The atomic approach to the Anderson model for the finite U case: application to a quantum dot.
Lobo, T; Figueira, M S; Foglio, M E
2010-07-09
In the present work we apply the atomic approach to the single-impurity Anderson model (SIAM). A general formulation of this approach, that can be applied both to the impurity and to the lattice Anderson Hamiltonian, was developed in a previous work (Foglio et al 2009 arxiv: 0903.0139v2 [cond-mat.str-el]). The method starts from the cumulant expansion of the periodic Anderson model, employing the hybridization as a perturbation. The atomic Anderson limit is analytically solved and its sixteen eigenenergies and eigenstates are obtained. This atomic Anderson solution, which we call the AAS, has all the fundamental excitations that generate the Kondo effect, and in the atomic approach is employed as a 'seed' to generate the approximate solutions for finite U. The width of the conduction band is reduced to zero in the AAS, and we choose its position such that the Friedel sum rule is satisfied, close to the chemical potential mu. We perform a complete study of the density of states of the SIAM over the whole relevant range of parameters: the empty dot, intermediate valence, Kondo and magnetic regimes. In the Kondo regime we obtain a density of states that characterizes well the structure of the Kondo peak. To show the usefulness of the method we have calculated the conductance of a quantum dot, side-coupled to a conduction band.
Inter-dot coupling effects on transport through correlated parallel coupled quantum dots
Indian Academy of Sciences (India)
Shyam Chand; G Rajput; K C Sharma; P K Ahluwalia
2009-05-01
Transport through symmetric parallel coupled quantum dot system has been studied, using non-equilibrium Green function formalism. The inter-dot tunnelling with on-dot and inter-dot Coulomb repulsion is included. The transmission coefficient and Landaur–Buttiker like current formula are shown in terms of internal states of quantum dots. The effect of inter-dot tunnelling on transport properties has been explored. Results, in intermediate inter-dot coupling regime show signatures of merger of two dots to form a single composite dot and in strong coupling regime the behaviour of the system resembles the two decoupled dots.
Electron states in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Dhayal, Suman S., E-mail: ssdhayal@gmail.com [Department of Physics, University of North Texas, P.O. Box 311427, Denton, Texas 76203 (United States); Ramaniah, Lavanya M., E-mail: lavanya@barc.gov.in [High Pressure and Synchrotron Radiation Physics Division, Physics Group, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Ruda, Harry E.; Nair, Selvakumar V., E-mail: selva.nair@utoronto.ca [Centre for Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E3 (Canada)
2014-11-28
In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.
Advancements in the Field of Quantum Dots
Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.
2012-08-01
Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.
Quantum-dot-in-perovskite solids
Ning, Zhijun
2015-07-15
© 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.
Okamoto, Yoshiaki; Motegi, Toshinori; Iwasa, Seiji; Sandhu, Adarsh; Tero, Ryugo
2015-04-01
The lipid bilayer is the fundamental structure of plasma membranes, and artificial lipid bilayer membranes are used as model systems of cell membranes. Recently we reported the formation of a supported lipid bilayer (SLB) on graphene oxide (GO) by the vesicle fusion method. In this study, we conjugated a quantum dot (Qdot) on the SLB surface as a fluorescence probe brighter than dye-labeled lipid molecules, to qualitatively evaluate the fluidity of the SLB on GO by the single particle tracking method. We obtained the diffusion coefficient of the Qdot-conjugated lipids in the SLB on GO. We also performed the Qdot conjugation on the SLB containing a lipid conjugated with polyethylene glycol, to prevent the nonspecific adsorption of Qdots. The difference in the diffusion coefficients between the SLBs on the GO and the bare SiO2 regions was evaluated from the trajectory of single Qdot-conjugated lipid diffusing between the two regions.
Goto, Thiago E; Lopes, Carla C; Nader, Helena B; Silva, Anielle C A; Dantas, Noelio O; Siqueira, José R; Caseli, Luciano
2016-07-01
Cadmium selenide (CdSe) magic-sized quantum dots (MSQDs) are semiconductor nanocrystals with stable luminescence that are feasible for biomedical applications, especially for in vivo and in vitro imaging of tumor cells. In this work, we investigated the specific interaction of CdSe MSQDs with tumorigenic and non-tumorigenic cells using Langmuir monolayers and Langmuir-Blodgett (LB) films of lipids as membrane models for diagnosis of cancerous cells. Surface pressure-area isotherms and polarization modulation reflection-absorption spectroscopy (PM-IRRAS) showed an intrinsic interaction between the quantum dots, inserted in the aqueous subphase, and Langmuir monolayers constituted either of selected lipids or of tumorigenic and non-tumorigenic cell extracts. The films were transferred to solid supports to obtain microscopic images, providing information on their morphology. Similarity between films with different compositions representing cell membranes, with or without the quantum dots, was evaluated by atomic force microscopy (AFM) and confocal microscopy. This study demonstrates that the affinity of quantum dots for models representing cancer cells permits the use of these systems as devices for cancer diagnosis.
Quantum Dots and Their Multimodal Applications: A Review
Holloway, Paul H; Teng-Kuan Tseng; Lei Qian; Debasis Bera
2010-01-01
Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons ...
Sunlight assisted photodegradation by tin oxide quantum dots
Shajira, P. S.; Prabhu, V. Ganeshchandra; Bushiri, M. Junaid
2015-12-01
Rutile phase of SnO2 quantum dots of average size of 2.5 nm were synthesized at a growth temperature of 70 °C and characterized with XRD, TEM, FTIR and Raman analysis. The effective strain within the lattice of SnO2 quantum dots was calculated by Williamson-Hall method. The broad peaks in XRD as well as Raman spectra and the presence of Raman bands at 569 and 432 cm-1 are due to lower crystallinity of nanoparticles. The optical band gap of SnO2 quantum dots was increased to 3.75 eV attributed to the quantum size effect. SnO2 quantum dots were annealed in air atmosphere and the crystallite size of the particles increased with annealing temperature. Sunlight assisted photodegration property of SnO2 quantum dots was investigated with vanillin as a model system and it shows the photodegradation efficiency of 87%. The photoluminescence and photodegradation efficiency of nanocrystallite SnO2 decreases with increase of crystallite size contributed to the reduction in population of defects and surface area.
Electron Spins in Semiconductor Quantum Dots
Hanson, R.
2005-01-01
This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic
Electromechanical transition in quantum dots
Micchi, G.; Avriller, R.; Pistolesi, F.
2016-09-01
The strong coupling between electronic transport in a single-level quantum dot and a capacitively coupled nanomechanical oscillator may lead to a transition towards a mechanically bistable and blocked-current state. Its observation is at reach in carbon-nanotube state-of-art experiments. In a recent publication [Phys. Rev. Lett. 115, 206802 (2015), 10.1103/PhysRevLett.115.206802] we have shown that this transition is characterized by pronounced signatures on the oscillator mechanical properties: the susceptibility, the displacement fluctuation spectrum, and the ring-down time. These properties are extracted from transport measurements, however the relation between the mechanical quantities and the electronic signal is not always straightforward. Moreover the dependence of the same quantities on temperature, bias or gate voltage, and external dissipation has not been studied. The purpose of this paper is to fill this gap and provide a detailed description of the transition. Specifically we find (i) the relation between the current-noise and the displacement spectrum; (ii) the peculiar behavior of the gate-voltage dependence of these spectra at the transition; (iii) the robustness of the transition towards the effect of external fluctuations and dissipation.
Quantum-Dot Semiconductor Optical Amplifiers: State Space Model versus Rate Equation Model
Directory of Open Access Journals (Sweden)
Hussein Taleb
2013-01-01
Full Text Available A simple and accurate dynamic model for QD-SOAs is proposed. The proposed model is based on the state space theory, where by eliminating the distance dependence of the rate equation model of the QD-SOA; we derive a state space model for the device. A comparison is made between the rate equation model and the state space model under both steady state and transient regimes. Simulation results demonstrate that the derived state space model not only is much simpler and faster than the rate equation model, but also it is as accurate as the rate equation model.
Chao, S.-P.; Palacios, G.
2010-01-01
We derive the transport properties of a quantum dot subject to a source-drain bias voltage at zero temperature and magnetic field. Using the Scattering Bethe Anstaz, a generalization of the traditional Thermodynamic Bethe Ansatz to open systems out of equilibrium, we derive exact results for the
Non-Equilibrium Quantum Transport of Bosons through a Quantum Dot
Institute of Scientific and Technical Information of China (English)
CHEN Zuo-Zi; L(U) Rong; ZHAI Hui; CHANG Lee
2006-01-01
@@ The quantum dot coupled to reservoirs is known as a typical mesoscopic setup to manifest the quantum characteristics of particles in transport. In analogue to many efforts made on the study of electronic quantum dots in the past decades, we study the transport of bosons through such a device. We first generalize the formula which relates the current to the local properties of dot in the bosonic situation. Then, as an illustrative example, we calculate the local density of state and lesser Green function of the localized boson with a bosonic Fano-Anderson model The current-voltage (Ⅰ-Ⅴ) behaviour at zero temperature is presented, and in the bosonic dot it is the Ⅰ-Ⅴ curve, in contrast to the differential conductance in the electronic dot, which is found to be proportional to the spectral function.
Spin-dependent coupling between quantum dots and topological quantum wires
Hoffman, Silas; Chevallier, Denis; Loss, Daniel; Klinovaja, Jelena
2017-07-01
Considering Rashba quantum wires with a proximity-induced superconducting gap as physical realizations of Majorana bound states and quantum dots, we calculate the overlap of the Majorana wave functions with the local wave functions on the dot. We determine the spin-dependent tunneling amplitudes between these two localized states and show that we can tune into a fully spin polarized tunneling regime by changing the distance between dot and Majorana bound state. Upon directly applying this to the tunneling model Hamiltonian, we calculate the effective magnetic field on the quantum dot flanked by two Majorana bound states. The direction of the induced magnetic field on the dot depends on the occupation of the nonlocal fermion formed from the two Majorana end states which can be used as a readout for such a Majorana qubit.
Data detection algorithms for multiplexed quantum dot encoding.
Goss, Kelly C; Messier, Geoff G; Potter, Mike E
2012-02-27
A group of quantum dots can be designed to have a unique spectral emission by varying the size of the quantum dots (wavelength) and number of quantum dots (intensity). This technique has been previously proposed for biological tags and object identification. The potential of this system lies in the ability to have a large number of distinguishable wavelengths and intensity levels. This paper presents a communications system model for MxQDs including the interference between neighbouring QD colours and detector noise. An analytical model of the signal-to-noise ratio of a Charge-Coupled Device (CCD) spectrometer is presented and confirmed with experimental results. We then apply a communications system perspective and propose data detection algorithms that increase the readability of the quantum dots tags. It is demonstrated that multiplexed quantum dot barcodes can be read with 99.7% accuracy using the proposed data detection algorithms in a system with 6 colours and 6 intensity values resulting in 46,655 unique spectral codes.
Dot-in-Well Quantum-Dot Infrared Photodetectors
Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung
2008-01-01
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material
Fan, Baolu; Guo, Xiaoxiao; Zhang, Yumeng; Fan, Jiyang
2017-02-01
We investigate the concentration and size dependent UV/green photoluminescence properties of the ZnO quantum dots (QDs) with sizes in the strong confinement regime. The luminescence characteristics of an ensemble of colloidal semiconductor QDs with quantum confinement effect depend sensitively on particle concentration but this has only been qualitatively understood. By taking ZnO QDs as an ideal prototype, we construct a material-independent theoretical model to study the photon reabsorption phenomenon. The theoretical result agrees well with the experiment. This model can be used to quantitatively study the concentration-dependent luminescence properties of any collection of QDs with considerable size dispersion. On the other hand, the origin of green emission in ZnO QDs remains debated. The comparative study of the size dependence of UV and green emissions in conjunction with the effective-mass approximation calculation suggests that the green emission in the ZnO QDs originates from the conduction band to the deep level transition.
Energy Technology Data Exchange (ETDEWEB)
Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)
2015-08-30
Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.
Quantum computation with two-dimensional graphene quantum dots
Institute of Scientific and Technical Information of China (English)
Li Jie-Sen; Li Zhi-Bing; Yao Dao-Xin
2012-01-01
We study an array of graphene nano sheets that form a two-dimensional S =1/2 Kagome spin lattice used for quantum computation.The edge states of the graphene nano sheets axe used to form quantum dots to confine electrons and perform the computation.We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots.It is shown that both schemes contain a great amount of information for quantum computation.The corresponding gate operations are also proposed.
Imaging electrostatically confined Dirac fermions in graphene quantum dots
Lee, Juwon; Wong, Dillon; Velasco, Jairo, Jr.; Rodriguez-Nieva, Joaquin F.; Kahn, Salman; Tsai, Hsin-Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid S.; Crommie, Michael F.
2016-11-01
Electrostatic confinement of charge carriers in graphene is governed by Klein tunnelling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at p-n junction boundaries. Reflection and transmission at these boundaries affect the quantum interference of electronic waves, enabling the formation of novel quasi-bound states. Here we report the use of scanning tunnelling microscopy to map the electronic structure of Dirac fermions confined in quantum dots defined by circular graphene p-n junctions. The quantum dots were fabricated using a technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe resonances due to quasi-bound states and directly visualize the quantum interference patterns arising from these states. Outside the quantum dots Dirac fermions exhibit Friedel oscillation-like behaviour. Bolstered by a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield insights into the spatial behaviour of electrostatically confined Dirac fermions.
Scalable quantum computer architecture with coupled donor-quantum dot qubits
Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey
2014-08-26
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.
UV Nano-Lights: Nonlinear Quantum Dot-Plasmon Coupling
2014-08-01
method is also applicable to bare nanoparticles in polar solvents. 15. SUBJECT TERMS Quantum Dots, Nonlinear Optical Materials , Energy...TERMS Quantum Dots, Nonlinear Optical Materials , Energy Conservation, Up-conversion 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT
Inorganic passivation and doping control in colloidal quantum dot photovoltaics
Hoogland, Sjoerd H.
2012-01-01
We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.
Static gain saturation in quantum dot semiconductor optical amplifiers.
Meuer, Christian; Kim, Jungho; Laemmlin, Matthias; Liebich, Sven; Capua, Amir; Eisenstein, Gadi; Kovsh, Alexey R; Mikhrin, Sergey S; Krestnikov, Igor L; Bimberg, Dieter
2008-05-26
Measurements of saturated amplified spontaneous emission-spectra of quantum dot semiconductor optical amplifiers demonstrate efficient replenishment of the quantum-dot ground state population from excited states. This saturation behavior is perfectly modeled by a rate equation model. We examined experimentally the dependence of saturation on the drive current and the saturating optical pump power as well as on the pump wavelength. A coherent noise spectral hole is observed with which we assess dynamical properties and propose optimization of the SOA operating parameters for high speed applications.
Three Quantum Dots Embedded in Aharonov-Bohm Rings
Toonen, Ryan; Hãttel, Andreas; Goswami, Srijit; Eberl, Karl; Eriksson, Mark; van der Weide, Daniel; Blick, Robert
2004-03-01
Coherent coupling of two quantum dots embedded in a ring-geometry has been demonstrated by Holleitner et al.(A.W. Holleitner, H. Qin, C.R. Decker, K. Eberl, and R.H. Blick, phCoherent Coupling of Two Quantum Dots Embedded in an Aharonov-Bohm Ring), Phys. Rev. Lett. 87, 256802 (2001) Recording of the Aharonov-Bohm oscillations in such a circuit has proven that the phases of electron wave functions can be manipulated directly. We have since enhanced the complexity of this system by embedding three quantum dots in such a ring-geometry. As before, our quantum dots are formed by laterally constricting a two-dimensional electron gas (2DEG) in an Al_xGa_1-xAs/GaAs heterostructure. The new, essential ingredient of this experiment is an additional third port--added to the ring for individually addressing the third quantum dot. This circuit allows us to investigate phenomena associated with phase-switching between separate ports. We will discuss first results and give a simple model of circuit operation.
Coherent transport through interacting quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hiltscher, Bastian
2012-10-05
The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in
Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector
Directory of Open Access Journals (Sweden)
W. W. Wang
2015-01-01
Full Text Available We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.
Coherence and dephasing in self-assembled quantum dots
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan
2003-01-01
We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...... coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneours broadening mechanism in the latter....
Modulation Response of Semiconductor Quantum Dot Nanocavity Lasers
DEFF Research Database (Denmark)
Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper
2011-01-01
The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble.......The modulation response of quantum-dot based nanocavity devices is investigated using a semiconductor theory. We show that high modulation bandwidth is achieved even in the presence of inhomogeneous broadening of the quantum dot ensemble....
Carbon quantum dots and a method of making the same
Energy Technology Data Exchange (ETDEWEB)
Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.
2017-08-22
The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.
LUMINESCENCE OF CADMIUM SULFIDE QUANTUM DOTS IN FLUOROPHOSPHATE GLASSES
Z. O. Lipatova; E. V. Kolobkova; V. A. Aseev
2015-01-01
Cadmium sulfide quantum dots are perspective materials in optics, medicine, biology and optoelectronics. Fluorophosphate glasses, doped with cadmium sulfide quantum dots, were examined in the paper. Heat treatment led to the formation of quantum dots with diameters equal to 2.8 nm, 3.0 nm and 3.8 nm. In view of such changes in the quantum dots size the fundamental absorption edge shift and the luminescence band are being displaced to the long wavelengths. Luminescence lifetime has been fou...
Magnetic quantum dot in two-dimensional topological insulators
Li, Guo; Zhu, Jia-Lin; Yang, Ning
2017-03-01
Magnetic quantum dots in two-dimensional band and topological insulators are studied by solving the modified Dirac model under nonuniform magnetic fields. The Landau levels split into discrete states with certain angular momentum. The states splitting from the zero Landau levels lie in the energy gap for topological insulators but are out of the gap for band insulators. It is found that the ground states oscillate between the spin-up and spin-down states when the magnetic field or the dot size changes. The oscillation manifests itself as changes of sign and strength of charge currents near the dot's edge.
Study of the electric capacitance spectra on symmetric quantum-dot pattern
Institute of Scientific and Technical Information of China (English)
DAI; Zhenhong(戴振宏); SUN; Jinzuo(孙金祚); ZHANG; Lide; (张立德); SUI; Pengfei(隋鹏飞); HUANG; Shiyong(黄士勇); LU; Maowang(卢卯旺)
2003-01-01
We have calculated the ground-state energy of the symmetric quantum-dot pattern by the ab initio calculation method, i.e. unrestricted Hartree-Fock-Roothaan (UHFR) method based on the Gaussian basis, and studied their electric capacitance spectra, assuming each quantum dot of quantum-dot pattern to be confined in a three-dimensional spherical potential well of finite depth. For the systems in question, our results show that our method and theoretical model not only give the electric capacitance peaks similar to s-shell and p-shell atom-like quantum dot, but also show some new fine-structure of electric capacitance in the symmetric quantum-dot pattern system. This method might be a feasible tool to study few-electron problems on the symmetric quantum-dot pattern system.
Design of tunneling injection quantum dot lasers
Institute of Scientific and Technical Information of China (English)
JIA Guo-zhi; YAO Jiang-hong; SHU Yong-chun; WANG Zhan-guo
2007-01-01
To implement high quality tunneling injection quantum dot lasers,effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability,tunneling time and carriers thermal escape time from the quantum well. The calculation results show that with increasing of the ground-state energy level in quantum well,the tunneling probability increases and the tunneling time decreases,while the thermal escape time decreases because the ground-state energy levelis shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.
Angiogenic Profiling of Synthesized Carbon Quantum Dots.
Shereema, R M; Sruthi, T V; Kumar, V B Sameer; Rao, T P; Shankar, S Sharath
2015-10-20
A simple method was employed for the synthesis of green luminescent carbon quantum dots (CQDs) from styrene soot. The CQDs were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared, and Raman spectroscopy. The prepared carbon quantum dots did not show cellular toxicity and could successfully be used for labeling cells. We also evaluated the effects of carbon quantum dots on the process of angiogenesis. Results of a chorioallantoic membrane (CAM) assay revealed the significant decrease in the density of branched vessels after their treatment with CQDs. Further application of CQDs significantly downregulated the expression levels of pro-angiogenic growth factors like VEGF and FGF. Expression of VEGFR2 and levels of hemoglobin were also significantly lower in CAMs treated with CQDs, indicating that the CQDs inhibit angiogenesis. Data presented here also show that CQDs can selectively target cancer cells and therefore hold potential in the field of cancer therapy.
Bright infrared LEDs based on colloidal quantum-dots
Sun, Liangfeng
2013-01-01
Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.
Complex dynamics in planar two-electron quantum dots
Energy Technology Data Exchange (ETDEWEB)
Schroeter, Sebastian Josef Arthur
2013-06-25
Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two
Ihly, Rachelle
This thesis explores the understanding of the chemistry and physics of colloidal quantum dots for practical solar energy photoconversion. Solar cell devices that make use of PbS quantum dots generally rely on constant and unchanged optical properties such that band gap energies remain tuned within the device. The design and development of unique experiments to ascertain mechanisms of optical band gap shifts occurring in PbS quantum dot thin-films exposed to air are discussed. The systematic study of the absorption properties of PbS quantum dot films exposed to air, heat, and UV illumination as a function of quantum dot size has been described. A method to improve the air-stability of films with atomic layer deposition of alumina is demonstrated. Encapsulation of quantum dot films using a protective layer of alumina results in quantum dot solids that maintain tuned absorption for 1000 hours. This thesis focuses on the use of atomic force microscopy and electrical variants thereof to study the physical and electrical characteristics of quantum dot arrays. These types of studies have broad implications in understanding charge transport mechanisms and solar cell device operation, with a particular emphasis on quantum dot transistors and solar cells. Imaging the channel potential of a PbSe quantum dot thin-film in a transistor showed a uniform distribution of charge coinciding with the transistor current voltage characteristics. In a second study, solar cell device operation of ZnO/PbS heterojunction solar cells was investigated by scanning active cross-sections with Kelvin probe microscopy as a function of applied bias, illumination and device architecture. This technique directly provides operating potential and electric field profiles to characterize drift and diffusion currents occurring in the device. SKPM established a field-free region occurring in the quantum dot layer, indicative of diffusion-limited transport. These results provide the path to optimization of
Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications
DEFF Research Database (Denmark)
Berg, Tommy Winther
2004-01-01
This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... devices in communication systems in the future. The basic properties of quantum dot devices are investigated, especially regarding the potential of realizing amplification and signal processing without introducing pattern dependence. Also the gain recovery of a single short pulse is modeled...... and an explanation for the fast gain recovery observed experimentally is given. The properties of quantum dot amplifiers operating in the linear regime are investigated. The devices are predicted to show high device gain, high saturated output power, and low noise figure, resulting in a performance, that in some...
The role of stress in CdTe quantum dot doped glasses
de Thomaz, A. A.; Almeida, D. B.; Pelegati, V. B.; Carvalho, H. F.; Moreira, S. G. C.; Barbosa, L. C.; Cesar, C. L.
2016-11-01
In this work, we unequivocally demonstrate the influence of matrix-related stresses on quantum dots by measuring, side by side, a CdTe quantum dot doped glass and a colloidal sample with similar sizes. We measured the fluorescence spectra and fluorescence lifetime for both samples as a function of the temperature. We show that the expansion coefficient mismatch between CdTe quantum dots and the glass host causes stresses and drastically changes its behavior compared to its colloidal counterpart, even leading to phase transitions. This finding indicates that most experimental data on glass-doped quantum dots used to validate confinement models should be revised, taking stress into account.
Resonant tunneling in graphene pseudomagnetic quantum dots.
Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro
2013-06-12
Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.
Cadmium telluride quantum dots advances and applications
Donegan, John
2013-01-01
Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign
Bilayer graphene quantum dot defined by topgates
Energy Technology Data Exchange (ETDEWEB)
Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)
2014-06-21
We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.
Reentrant formation of magnetic polarons in quantum dots
Pientka, J. M.; Oszwałdowski, R.; Petukhov, A. G.; Han, J. E.; Žutić, Igor
2012-10-01
We propose a model of magnetic polaron formation in semiconductor quantum dots doped with magnetic ions. A wetting layer serves as a reservoir of photogenerated holes, which can be trapped by the adjacent quantum dots. For certain hole densities, the temperature dependence of the magnetization induced by the trapped holes is reentrant: it disappears for some temperature range and reappears at higher temperatures. We demonstrate that this peculiar effect is not an artifact of the mean-field approximation and persists after statistical spin fluctuations are accounted for. We predict fingerprints of reentrant magnetic polarons in photoluminescence spectra.
QCAD simulation and optimization of semiconductor double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson
2013-12-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design
Energy Technology Data Exchange (ETDEWEB)
Agusdinata, Datu Buyung, E-mail: bagusdinata@niu.edu; Amouie, Mahbod [Northern Illinois University, Department of Industrial & Systems Engineering and Environment, Sustainability, & Energy Institute (United States); Xu, Tao [Northern Illinois University, Department of Chemistry and Biochemistry (United States)
2015-01-15
Due to their favorable electrical and optical properties, quantum dots (QDs) nanostructures have found numerous applications including nanomedicine and photovoltaic cells. However, increased future production, use, and disposal of engineered QD products also raise concerns about their potential environmental impacts. The objective of this work is to establish a modeling framework for predicting the diffusion dynamics and concentration of toxic materials released from Trioctylphosphine oxide-capped CdSe. To this end, an agent-based model simulation with reaction kinetics and Brownian motion dynamics was developed. Reaction kinetics is used to model the stability of surface capping agent particularly due to oxidation process. The diffusion of toxic Cd{sup 2+} ions in aquatic environment was simulated using an adapted Brownian motion algorithm. A calibrated parameter to reflect sensitivity to reaction rate is proposed. The model output demonstrates the stochastic spatial distribution of toxic Cd{sup 2+} ions under different values of proxy environmental factor parameters. With the only chemistry considered was oxidation, the simulation was able to replicate Cd{sup 2+} ion release from Thiol-capped QDs in aerated water. The agent-based method is the first to be developed in the QDs application domain. It adds both simplicity of the solubility and rate of release of Cd{sup 2+} ions and complexity of tracking of individual atoms of Cd at the same time.
High resolution STEM of quantum dots and quantum wires
DEFF Research Database (Denmark)
Kadkhodazadeh, Shima
2013-01-01
This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...
THz quantum-confined Stark effect in semiconductor quantum dots
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.;
2012-01-01
We demonstrate an instantaneous all-optical manipulation of optical absorption at the ground state of InGaAs/GaAs quantum dots (QDs) via a quantum-confined Stark effect (QCSE) induced by the electric field of incident THz pulses with peak electric fields reaching 200 kV/cm in the free space...
A Polaron in a Quantum Dot Quantum Well
Institute of Scientific and Technical Information of China (English)
ZHANG Li; XIE HongJing; CHEN ChuanYu
2002-01-01
The polaron effect in a quantum dot quantum well (QDQW)system is investigated by using the perturbation method. Both the bound electron states outside and inside the shell well are taken into account . Numerical calculation on the CdS/HgS QDQW shows that the phonon correction to the electron ground state energy is quite significant and cannot be neglected.
Highly Fluorescent Noble Metal Quantum Dots
Zheng, Jie; Nicovich, Philip R.; Dickson, Robert M.
2009-01-01
Highly fluorescent, water-soluble, few-atom noble metal quantum dots have been created that behave as multi-electron artificial atoms with discrete, size-tunable electronic transitions throughout the visible and near IR. These “molecular metals” exhibit highly polarizable transitions and scale in size according to the simple relation, Efermi/N1/3, predicted by the free electron model of metallic behavior. This simple scaling indicates that fluorescence arises from intraband transitions of free electrons and that these conduction electron transitions are the low number limit of the plasmon – the collective dipole oscillations occurring when a continuous density of states is reached. Providing the “missing link” between atomic and nanoparticle behavior in noble metals, these emissive, water-soluble Au nanoclusters open new opportunities for biological labels, energy transfer pairs, and light emitting sources in nanoscale optoelectronics. PMID:17105412
Probing silicon quantum dots by single-dot techniques
Sychugov, Ilya; Valenta, Jan; Linnros, Jan
2017-02-01
Silicon nanocrystals represent an important class of non-toxic, heavy-metal free quantum dots, where the high natural abundance of silicon is an additional advantage. Successful development in mass-fabrication, starting from porous silicon to recent advances in chemical and plasma synthesis, opens up new possibilities for applications in optoelectronics, bio-imaging, photovoltaics, and sensitizing areas. In this review basic physical properties of silicon nanocrystals revealed by photoluminescence spectroscopy, lifetime, intensity trace and electrical measurements on individual nanoparticles are summarized. The fabrication methods developed for accessing single Si nanocrystals are also reviewed. It is concluded that silicon nanocrystals share many of the properties of direct bandgap nanocrystals exhibiting sharp emission lines at low temperatures, on/off blinking, spectral diffusion etc. An analysis of reported results is provided in comparison with theory and with direct bandgap material quantum dots. In addition, the role of passivation and inherent interface/matrix defects is discussed.
Recombination in quantum dot sensitized solar cells.
Mora-Seró, Iván; Giménez, Sixto; Fabregat-Santiago, Francisco; Gómez, Roberto; Shen, Qing; Toyoda, Taro; Bisquert, Juan
2009-11-17
Quantum dot sensitized solar cells (QDSCs) have attracted significant attention as promising third-generation photovoltaic devices. In the form of quantum dots (QDs), the semiconductor sensitizers have very useful and often tunable properties; moreover, their theoretical thermodynamic efficiency might be as high as 44%, better than the original 31% calculated ceiling. Unfortunately, the practical performance of these devices still lags behind that of dye-sensitized solar cells. In this Account, we summarize the strategies for depositing CdSe quantum dots on nanostructured mesoporous TiO(2) electrodes and discuss the methods that facilitate improvement in the performance and stability of QDSCs. One particularly significant factor for solar cells that use polysulfide electrolyte as the redox couple, which provides the best performance among QDSCs, is the passivation of the photoanode surface with a ZnS coating, which leads to a dramatic increase of photocurrents and efficiencies. However, these solar cells usually show a poor current-potential characteristic, so a general investigation of the recombination mechanisms is required for improvements. A physical model based on recombination through a monoenergetic TiO(2) surface state that takes into account the effect of the surface coverage has been developed to better understand the recombination mechanisms of QDSCs. The three main methods of QD adsorption on TiO(2) are (i) in situ growth of QDs by chemical bath deposition (CBD), (ii) deposition of presynthesized colloidal QDs by direct adsorption (DA), and (iii) deposition of presynthesized colloidal QDs by linker-assisted adsorption (LA). A systematic investigation by impedance spectroscopy of QDSCs prepared by these methods showed a decrease in the charge-transfer resistance and increased electron lifetimes for CBD samples; the same result was found after ZnS coating because of the covering of the TiO(2) surface. The increase of the lifetime with the ZnS treatment
Local Gate Control of a Carbon Nanotube Double Quantum Dot
2016-04-04
Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and...used the resulting enhanced control to investigate a nano- tube double quantum dot. Transport measurements reveal honeycomb charge stability diagrams...This ability to control electron interactions in the quantum regime in a molecular conductor is important for applications such as quantum
Tamandani, Shahryar; Darvish, Ghafar
2017-01-01
We investigate electron transport between circular graphene quantum dots (CGQDs) and ZnO nanowires (ZnO NWs). This structure can be used as donor and acceptor in hybrid solar cells. We consider circular quantum dots (QDs) and use analytical calculation in order to estimate wavefunctions of GQD and ZnO NWs. After calculating the wavefunctions overlap, we use Marcus relation in order to calculate electron transfer rate. Also, we calculate this transfer rate for CdSe QDs-ZnO NWs system. Results from analytical calculation show that the transfer rate is limited to 1013 s-1. This result is in agreement with experimental results which are reported earlier. Such systems could be suitable for solar cells.
DEFF Research Database (Denmark)
Van Driel, A.F.; Nikolaev, I.S.; Vergeer, P.
2007-01-01
analysis to recent examples of colloidal quantum dot emission in suspensions and in photonic crystals, and we find that this important class of emitters is well described by a log-normal distribution of decay rates with a narrow and a broad distribution, respectively. Finally, we briefly discuss......We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed, the density of excited emitters...... and the intensity in an emission decay curve are not proportional, but the density is a time integral of the intensity. The integral relation is crucial to correctly interpret non-single-exponential decay. We derive the proper normalization for both a discrete and a continuous distribution of rates, where every...
Photoluminescence studies of single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher
1999-01-01
Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....
Germanium quantum dots: Optical properties and synthesis
Heath, James R.; Shiang, J. J.; Alivisatos, A. P.
1994-07-01
Three different size distributions of Ge quantum dots (≳200, 110, and 60 Å) have been synthesized via the ultrasonic mediated reduction of mixtures of chlorogermanes and organochlorogermanes (or organochlorosilanes) by a colloidal sodium/potassium alloy in heptane, followed by annealing in a sealed pressure vessel at 270 °C. The quantum dots are characterized by transmission electron microscopy, x-ray powder diffraction, x-ray photoemission, infrared spectroscopy, and Raman spectroscopy. Colloidal suspensions of these quantum dots were prepared and their extinction spectra are measured with ultraviolet/visible (UV/Vis) and near infrared (IR) spectroscopy, in the regime from 0.6 to 5 eV. The optical spectra are correlated with a Mie theory extinction calculation utilizing bulk optical constants. This leads to an assignment of three optical features to the E(1), E(0'), and E(2) direct band gap transitions. The E(0') transitions exhibit a strong size dependence. The near IR spectra of the largest dots is dominated by E(0) direct gap absorptions. For the smallest dots the near IR spectrum is dominated by the Γ25→L indirect transitions.
Nonlocal quantum cloning via quantum dots trapped in distant cavities
Institute of Scientific and Technical Information of China (English)
Yu Tao; Zhu Ai-Dong; Zhang Shou
2012-01-01
A scheme for implementing nonlocal quantum cloning via quantum dots trapped in cavities is proposed.By modulating the parameters of the system,the optimal 1 → 2 universal quantum cloning machine,1 → 2 phase-covariant cloning machine,and 1 → 3 economical phase-covariant cloning machine are constructed.The present scheme,which is attainable with current technology,saves two qubits compared with previous cloning machines.
Synthesis of CdSe quantum dots for quantum dot sensitized solar cell
Energy Technology Data Exchange (ETDEWEB)
Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)
2014-04-24
CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.
Smirnov, A. M.; Boriskin, A. G.; Dneprovskii, V. S.
2017-06-01
The goal of the work is modeling and development of nondestructive method for the doped semiconductor layer diagnostics and measurement of the impurity levels depth relatively to the conduction band. To carry out diagnostics for materials with a high linear absorption there is required a method allows to measure material characteristics on the surface layer. To solve this problem was chosen reflected degenerate four-wave mixing technique. Nonlinear response increases dramatically in the case of the resonant excitation of electron-hole transition. Reflected degenerate four-wave mixing has been discovered in the case of one-photon resonant excitation of the excitons (electron - hole) transition for the atomic-like model structure (highly absorbing colloidal solution of CdSe/ZnS quantum dots (QDs)) by powerful beams of mode-locked laser with picosecond pulse duration. Formation of the beams in forward direction can be explained both self-diffraction of the input beams at the induced one-dimensional photonic crystal (induced diffraction grating) and by forward degenerate four-wave mixing. Backward direction beams formation can be explained only by reflected degenerate four-wave mixing.
Nonequilibrium Transport through a Spinful Quantum Dot with Superconducting Leads
DEFF Research Database (Denmark)
Andersen, Brian Møller; Flensberg, Karsten; Koerting, Verena
2011-01-01
We study the nonlinear cotunneling current through a spinful quantum dot contacted by two superconducting leads. Applying a general nonequilibrium Green function formalism to an effective Kondo model, we study the rich variation in the IV characteristics with varying asymmetry in the tunnel...
Multiple Nuclear Polarization States in a Double Quantum Dot
Danon, J.; Vink, I.T.; Koppens, F.H.L.; Nowack, K.C.; Vandersypen, L.M.K.; Nazarov, Y.V.
2009-01-01
We observe multiple stable states of nuclear polarization and nuclear self-tuning over a large range of fields in a double quantum dot under conditions of electron spin resonance. The observations can be understood within an elaborated theoretical rate equation model for the polarization in each of
Charged-Exciton Complexes in Quantum Dots
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang
2001-01-01
It is known experimentally that stable charged-exciton complexes can exist in low-dimensional semiconductor nanostructures. Much less is known about the properties of such charged-exciton complexes since three-body problems are very difficult to be solved, even numerically. Here we introduce the correlated hyperspherical harmonics as basis functions to solve the hyperangular equation for negatively and positively charged excitons (trions) in a harmonic quantum dot. By using this method, we have calculated the energy spectra of the low-lying states of a charged exciton as a function of the radius of quantum dot. Based on symmetry analysis, the level crossover as the dot radius increases can be fully explained as the results of symmetry constraint.``
System and method for making quantum dots
Bakr, Osman M.
2015-05-28
Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.
Quantum dot waveguides: ultrafast dynamics and applications
DEFF Research Database (Denmark)
Chen, Yaohui; Mørk, Jesper
2009-01-01
In this paper we analyze, based on numerical simulations, the dynamics of semiconductor devices incorporating quantum dots (QDs). In particular we emphasize the unique ultrafast carrier dynamics occurring between discrete QD bound states, and its influence on QD semiconductor optical amplifiers...... (SOAs). Also the possibility of realizing an all-optical regenerator by incorporating a QD absorber section in an amplifier structure is discussed....
Electron Scattering in Intrananotube Quantum Dots
Buchs, G.; Bercioux, D.; Ruffieux, P.; Gröning, P.; Grabert, H.; Gröning, O.
2009-01-01
Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200 meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar+ irradiation. Fourier-transform scanning tunneling spectroscopy compared to results of a Fabry-Perot electron r
Producing Quantum Dots by Spray Pyrolysis
Banger, Kulbinder; Jin, Michael H.; Hepp, Aloysius
2006-01-01
An improved process for making nanocrystallites, commonly denoted quantum dots (QDs), is based on spray pyrolysis. Unlike the process used heretofore, the improved process is amenable to mass production of either passivated or non-passivated QDs, with computer control to ensure near uniformity of size.
Enabling biomedical research with designer quantum dots
Tomczak, N.; Janczewski, D.; Dorokhin, D.V.; Han, M-Y; Vancso, G.J.; Navarro, Melba; Planell, Josep A.
2012-01-01
Quantum Dots (QDs) are a new class of semiconductor nanoparticulate luminophores, which are actively researched for novel applications in biology and nanomedicine. In this review, the recent progress in the design and applications of QD labels for in vitro and in vivo imaging of cells is presented.
Single Molecule Applications of Quantum Dots
DEFF Research Database (Denmark)
Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.
2013-01-01
Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows: 1...
Spin Wigner molecules in quantum dots
Zutic, Igor; Oszwaldowski, Rafal; Stano, Peter; Petukhov, A. G.
2013-03-01
The interplay of confinement and Coulomb interactions in quantum dots can lead to strongly correlated phases differing qualitatively from the Fermi liquid behavior. While in three dimensions the correlation-induced Wigner crystal is elusive and expected only in the limit of an extremely low carrier density, its nanoscale analog, the Wigner molecule, has been observed in quantum dots at much higher densities [1]. We explore how the presence of magnetic impurities in quantum dots can provide additional opportunities to study correlation effects and the resulting ordering in carrier and impurity spins[2]. By employing exact diagonalization we reveal that seemingly simple two-carrier quantum dots lead to a rich phase diagram [2,3]. We propose experiments to verify our predictions; in particular, we discuss interband optical transitions as a function of temperature and magnetic field. DOE-BES, meta-QUTE 259 ITMS NFP Grant No. 26240120022, CE SAS QUTE, EU 260 Project Q-essence, Grant No. APVV-0646-10, and SCIEX.
Optical Properties of Quantum-Dot-Doped Liquid Scintillators
Aberle, C; Weiss, S; Winslow, L
2013-01-01
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.
Optical properties of quantum-dot-doped liquid scintillators
Aberle, C.; Li, J. J.; Weiss, S.; Winslow, L.
2013-10-01
Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO.
Quantum interference and control of the optical response in quantum dot molecules
Energy Technology Data Exchange (ETDEWEB)
Borges, H. S.; Sanz, L.; Villas-Boas, J. M.; Alcalde, A. M. [Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia-MG (Brazil)
2013-11-25
We discuss the optical response of a quantum molecule under the action of two lasers fields. Using a realistic model and parameters, we map the physical conditions to find three different phenomena reported in the literature: the tunneling induced transparency, the formation of Autler-Townes doublets, and the creation of a Mollow-like triplet. We found that the electron tunneling between quantum dots is responsible for the different optical regime. Our results not only explain the experimental results in the literature but also give insights for future experiments and applications in optics using quantum dots molecules.
Measuring the effective phonon density of states of a quantum dot in cavity quantum electrodynamics
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Nielsen, Per Kær; Kreiner-Møller, Asger
2013-01-01
We employ detuning-dependent decay-rate measurements of a quantum dot in a photonic-crystal cavity to study the influence of phonon dephasing in a solid-state quantum-electrodynamics experiment. The experimental data agree with a microscopic non-Markovian model accounting for dephasing from...... longitudinal acoustic phonons, and the analysis explains the difference between nonresonant cavity feeding in different nanocavities. From the comparison between experiment and theory we extract the effective phonon density of states experienced by the quantum dot in the nanocavity. This quantity determines...
Probing the quantum-classical connection with open quantum dots
Ferry, D. K.; Akis, R.; Brunner, R.
2015-10-01
Open quantum dots provide a natural system in which to study both classical and quantum features of transport. From the classical point of view these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. As a closed test bed, they provide a natural system with a very rich set of eigen-states. When coupled to the environment through a pair of quantum point contacts, each of which passes several modes, the original quantum environment evolves into a set of decoherent and coherent states, which eventually couple to the classical states discussed above. The manner of this connection is governed strongly by decoherence theory. The remaining coherent states possess all the properties of pointer states. Here, we discuss the quantum-classical connection and how it appears within the experimental world.
Quantum Dots and Their Multimodal Applications: A Review
Directory of Open Access Journals (Sweden)
Paul H. Holloway
2010-03-01
Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.
Detection and control of charge states in a quintuple quantum dot
Ito, Takumi; Otsuka, Tomohiro; Amaha, Shinichi; Delbecq, Matthieu R.; Nakajima, Takashi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Noiri, Akito; Kawasaki, Kento; Tarucha, Seigo
2016-12-01
A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the five dots as confirmed by measurements of the charge states of the three nearest dots to the respective charge sensor. The gate performance of the measured stability diagram is well reproduced by a capacitance model. These results provide an important step towards realizing controllable large scale multiple quantum dot systems.
Efficient Luminescence from Perovskite Quantum Dot Solids
Kim, Younghoon
2015-11-18
© 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.
Light emission from Si quantum dots
Directory of Open Access Journals (Sweden)
Philippe M. Fauchet
2005-01-01
Full Text Available Si quantum dots (QDs as small as ∼2 nm in diameter have been synthesized by a variety of techniques. Because of quantum confinement and the elimination of bulk or surface defects, these dots can emit light from the near infrared throughout the visible with quantum efficiencies in excess of 10%. The luminescence wavelength range has been extended to longer wavelengths by the addition of light-emitting rare earths such as erbium (Er. Light-emitting devices (LEDs have been fabricated and their performances are starting to approach those of direct band gap semiconductor or organic LEDs. A search for a Si QD-based laser is even under way. The state-of-the-art in the materials science, physics, and device development of luminescent Si QDs is reviewed and areas of future research are pointed out.
Quantum Size- Dependent Third- Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots
Institute of Scientific and Technical Information of China (English)
SUN Ting; XIONG Gui-guang
2005-01-01
The density matrix approach has been employed to investigate the optical nonlinear polarization in a single semiconductor quantum dot(QD). Electron states are considered to be confined within a quantum dot with infinite potential barriers. It is shown, by numerical calculation, that the third-order nonlinear optical susceptibilities for a typical Si quantum dot is dependent on the quantum size of the quantum dot and the frequency of incident light.
Spin-Orbit Splitting in Semiconductor Quantum Dots with a Two-Dimensional Ring Model
Institute of Scientific and Technical Information of China (English)
FENG Jun-Sheng; LIU Zheng
2009-01-01
We present a theoretical study of the energy levels with two-dimensional ring confining potential in the presence of the Rashba spin-orbit interaction.The features of some low-lying states in various strengths of the Rashba spin-orbit interaction are investigated.The Rashba spin-orbit splitting can also be influenced by the width of the potential barrier.The computed results show that the spin-polarized electronic states can be more easily achieved in a weakly confined dot when the confinement strength for the Rashba spin-orbit interaction is larger than a critical value.
Local Quantum Dot Tuning on Photonic Crystal Chips
Faraon, Andrei; Fushman, Ilya; Stoltz, Nick; Petroff, Pierre; Vuckovic, Jelena
2007-01-01
Quantum networks based on InGaAs quantum dots embedded in photonic crystal devices rely on QDs being in resonance with each other and with the cavities they are embedded in. We developed a new technique based on temperature tuning to spectrally align different quantum dots located on the same chip. The technique allows for up to 1.8nm reversible on-chip quantum dot tuning.
High-resolution photoluminescence studies of single semiconductor quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...... developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...
Coupling of single quantum dots to a photonic crystal waveguide
DEFF Research Database (Denmark)
Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian
. An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...
Electron-hole confinement symmetry in silicon quantum dots
Müller, F.; Mueller, Filipp; Konstantaras, Georgios; Spruijtenburg, P.C.; van der Wiel, Wilfred Gerard; Zwanenburg, Floris Arnoud
2015-01-01
We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron−hole confinement symmetry is
Coupling of single quantum dots to a photonic crystal waveguide
DEFF Research Database (Denmark)
Lund-Hansen, Toke; Stobbe, Søren; Julsgaard, Brian;
. An alternative approach is to couple the quantum dot directly to the propagating mode of a photonic waveguide. We demonstrate the coupling of single quantum dots to a photonic crystal waveguide using time-resolved spontaneous emission measurements. A pronounced effect is seen in the decay rates of dots coupled...
Mitigation of quantum dot cytotoxicity by microencapsulation.
Directory of Open Access Journals (Sweden)
Amelia Romoser
Full Text Available When CdSe/ZnS-polyethyleneimine (PEI quantum dots (QDs are microencapsulated in polymeric microcapsules, human fibroblasts are protected from acute cytotoxic effects. Differences in cellular morphology, uptake, and viability were assessed after treatment with either microencapsulated or unencapsulated dots. Specifically, QDs contained in microcapsules terminated with polyethylene glycol (PEG mitigate contact with and uptake by cells, thus providing a tool to retain particle luminescence for applications such as extracellular sensing and imaging. The microcapsule serves as the "first line of defense" for containing the QDs. This enables the individual QD coating to be designed primarily to enhance the function of the biosensor.
DEFF Research Database (Denmark)
Johansen, Jeppe; Stobbe, Søren; Nikolaev, Ivan S.;
2008-01-01
and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics......The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results...
Coherent transport through interacting quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hiltscher, Bastian
2012-10-05
The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in
Lee, Seungwon; vonAllmen, Paul; Oyafuso, Fabiano; Klimeck, Gerhard; Whale, K. Birgitta
2004-01-01
Electron spin dephasing and decoherence by its interaction with nuclear spins in self-assembled quantum dots are investigated in the framework of the empirical tight-binding model. Electron spin dephasing in an ensemble of dots is induced by the inhomogeneous precession frequencies of the electron among dots, while electron spin decoherence in a single dot arises from the inhomogeneous precession frequencies of nuclear spins in the dot. For In(x)Ga(1-x) As self-assembled dots containing 30000 nuclei, the dephasing and decoherence times are predicted to be on the order of 100 ps and 1 (micro)s.
Studies of silicon quantum dots prepared at different substrate temperatures
Al-Agel, Faisal A.; Suleiman, Jamal; Khan, Shamshad A.
2017-03-01
In this research work, we have synthesized silicon quantum dots at different substrate temperatures 193, 153 and 123 K at a fixed working pressure 5 Torr. of Argon gas. The structural studies of these silicon quantum dots have been undertaken using X-ray diffraction, Field Emission Scanning Electron Microscopy (FESEM) and High Resolution Transmission Electron Microscopy (HRTEM). The optical and electrical properties have been studied using UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Fluorescence spectroscopy and I-V measurement system. X-ray diffraction pattern of Si quantum dots prepared at different temperatures show the amorphous nature except for the quantum dots synthesized at 193 K which shows polycrystalline nature. FESEM images of samples suggest that the size of quantum dots varies from 2 to 8 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed for Si quantum dots. FTIR spectra suggest that as-grown Si quantum dots are partially oxidized which is due exposure of as-prepared samples to air after taking out from the chamber. PL spectra of the synthesized silicon quantum dots show an intense peak at 444 nm, which may be attributed to the formation of Si quantum dots. Temperature dependence of dc conductivity suggests that the dc conductivity enhances exponentially by raising the temperature. On the basis above properties i.e. direct band gap, high absorption coefficient and high conductivity, these silicon quantum dots will be useful for the fabrication of solar cells.
Single quantum dots fundamentals, applications, and new concepts
2003-01-01
This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.
Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.
Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni
2017-03-22
We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.
Principles of conjugating quantum dots to proteins via carbodiimide chemistry.
Song, Fayi; Chan, Warren C W
2011-12-09
The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein-quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.
Asokan, Subashini; Krueger, Karl M; Alkhawaldeh, Ammar; Carreon, Alessandra R; Mu, Zuze; Colvin, Vicki L; Mantzaris, Nikos V; Wong, Michael S
2005-10-01
Fluorescent semiconductor nanoparticles, or quantum dots, have potential uses as an optical material, in which the optoelectronic properties can be tuned precisely by particle size. Advances in chemical synthesis have led to improvements in size and shape control, cost, and safety. A limiting step in large-scale production is identified to be the raw materials cost, in which a common synthesis solvent, octadecene, accounts for most of the materials cost for a batch of CdSe quantum dots. Thus, less expensive solvents are needed. In this paper, we identify heat transfer fluids, a class of organic liquids commonly used in chemical process industries to transport heat between unit operations, as alternative solvents for quantum dot synthesis. We specifically show that two heat transfer fluids can be used successfully in the synthesis of CdSe quantum dots with uniform particle sizes. We show that the synthesis chemistry for CdSe/CdS core/shell quantum dots and CdSe quantum rods can also be performed in heat transfer fluids. With the aid of a population balance model, we interpret the effect of different HT fluids on QD growth kinetics in terms of solvent effects, i.e., solvent viscosity, CdSe bulk solubility in the solvent, and surface free energy.
Probing relaxation times in graphene quantum dots
Volk, Christian; Neumann, Christoph; Kazarski, Sebastian; Fringes, Stefan; Engels, Stephan; Haupt, Federica; Müller, André; Stampfer, Christoph
2013-01-01
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dots have been extensively investigated with respect to their excitation spectrum, spin-filling sequence and electron-hole crossover. However, their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular concerning the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here we report pulsed-gate transient current spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design that allows to individually tune the tunnelling barriers down to the low megahertz regime, while monitoring their asymmetry. Measuring transient currents through electronic excited states, we estimate a lower bound for charge relaxation times on the order of 60–100 ns. PMID:23612294
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
Energy Technology Data Exchange (ETDEWEB)
Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)
2016-05-16
We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.
Barrier Li Quantum Dots in Magnetic Fields
Institute of Scientific and Technical Information of China (English)
LIUYi-Min; LIXiao-Zhu; YANWen-Hong; BAOCheng-Guang
2003-01-01
The methods for the few-body system are introduced to investigate the states of the barrier Li quantum dots (QDs) in an arbitrary strength of magnetic field. The configuration, which consists of a positive ion located on the z-axis at a distaneed from the two-dimensional QD plane (the x-y plane) and three electrons in the dot plane bound by the positive ion, is called a barrier Li center. The system, which consists of three electrons in the dot plane bound by the ion,is called a barrier Li QD. The dependence of energy of the state of the barrier Li QD on an external magnetic field B and the distance d is obtained. The angular momentum L of the ground states is found to jump not only with the variation orB but also with d.
Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G
2015-01-14
We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.
Buffet, Pierre-Emmanuel; Zalouk-Vergnoux, Aurore; Poirier, Laurence; Lopes, Christelle; Risso-de-Faverney, Christine; Guibbolini, Marielle; Gilliland, Douglas; Perrein-Ettajani, Hanane; Valsami-Jones, Eugenia; Mouneyrac, Catherine
2015-07-01
Cadmium sulfide (CdS) quantum dots have a number of current applications in electronics and solar cells and significant future potential in medicine. The aim of the present study was to examine the toxic effects of CdS quantum dots on the marine clam Scrobicularia plana exposed for 14 d to these nanomaterials (10 µg Cd L(-1) ) in natural seawater and to compare them with soluble Cd. Measurement of labile Cd released from CdS quantum dots showed that 52% of CdS quantum dots remained in the nanoparticulate form. Clams accumulated the same levels of Cd regardless of the form in which it was delivered (soluble Cd vs CdS quantum dots). However, significant changes in biochemical responses were observed in clams exposed to CdS quantum dots compared with soluble Cd. Increased activities of catalase and glutathione-S-transferase were significantly higher in clams exposed in seawater to Cd as the nanoparticulate versus the soluble form, suggesting a specific nano effect. The behavior of S. plana in sediment showed impairments of foot movements only in the case of exposure to CdS quantum dots. The results show that oxidative stress and behavior biomarkers are sensitive predictors of CdS quantum dots toxicity in S. plana. Such responses, appearing well before changes might occur at the population level, demonstrate the usefulness of this model species and type of biomarker in the assessment of nanoparticle contamination in estuarine ecosystems.
Carbon Quantum Dots for Zebrafish Fluorescence Imaging
Kang, Yan-Fei; Li, Yu-Hao; Fang, Yang-Wu; Xu, Yang; Wei, Xiao-Mi; Yin, Xue-Bo
2015-07-01
Carbon quantum dots (C-QDs) are becoming a desirable alternative to metal-based QDs and dye probes owing to their high biocompatibility, low toxicity, ease of preparation, and unique photophysical properties. Herein, we describe fluorescence bioimaging of zebrafish using C-QDs as probe in terms of the preparation of C-QDs, zebrafish husbandry, embryo harvesting, and introduction of C-QDs into embryos and larvae by soaking and microinjection. The multicolor of C-QDs was validated with their imaging for zebrafish embryo. The distribution of C-QDs in zebrafish embryos and larvae were successfully observed from their fluorescence emission. the bio-toxicity of C-QDs was tested with zebrafish as model and C-QDs do not interfere to the development of zebrafish embryo. All of the results confirmed the high biocompatibility and low toxicity of C-QDs as imaging probe. The absorption, distribution, metabolism and excretion route (ADME) of C-QDs in zebrafish was revealed by their distribution. Our work provides the useful information for the researchers interested in studying with zebrafish as a model and the applications of C-QDs. The operations related zebrafish are suitable for the study of the toxicity, adverse effects, transport, and biocompatibility of nanomaterials as well as for drug screening with zebrafish as model.
Quantum Entanglement of Quantum Dot Spin Using Flying Qubits
2015-05-01
SPDC photon is teleported to a single quantum dot spin by a projective measurement using a Hong Ou Mandel (HOM) interferometer. The SPDC source...photo diode B: Blue CW: Continuous wave DBR: Distributed Bragg reflector EOM: Electro-optics modulator H: Horizontal HOM: Hong-Ou- Mandel InAs
Quantum optics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean
2016-01-01
We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...
Quantum photonics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide;
2016-01-01
We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...
Study of the evanescent wave coupled semiconductor quantum dot amplifying fiber
Institute of Scientific and Technical Information of China (English)
WANG Ke-xin; WANG Ting-yun; PANG Fu-fei
2007-01-01
Based on the character of semiconductors and the structure of optical fiber coupler,a new amplifying fiber,coupled semiconductor quantum dot amplifying fiber (CSQDAF),has been presented. A simplified model of PbS quantum dot amplifying fiber is built on the energy band structure of semiconductor quantum dots,and a simple expression deduced from the two-level rate equations and light propagation equations is shown in this paper,by which the gain of quantum dot amplifying fiber can be calculated. A gain of approximately 4.5 dB has been measured in this coupled semiconductor quantum dot amplifying fiber at a wavelength of 1310 nm,when the fiber is pumped by a laser operating at a wavelength of 980 nm with power of 30 mW.
Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots
Institute of Scientific and Technical Information of China (English)
DOU Xiu-Ming; SUN Bao-Quan; XIONG Yong-Hua; HUANG She-Song; NI Hai-Qiao; NIU Zhi-Chuan
2008-01-01
We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift.We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra.It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.
Simulations of the spontaneous emission of a quantum dot near a gap plasmon waveguide
Energy Technology Data Exchange (ETDEWEB)
Perera, Chamanei S., E-mail: cp.hettiarachchige@qut.edu.au; Vernon, Kristy C.; Mcleod, Angus [Plasmonic Device Group, Queensland University of Technology, GPO box 2434, Brisbane, Queensland (Australia)
2014-02-07
In this paper, we modeled a quantum dot at near proximity to a gap plasmon waveguide to study the quantum dot-plasmon interactions. Assuming that the waveguide is single mode, this paper is concerned about the dependence of spontaneous emission rate of the quantum dot on waveguide dimensions such as width and height. We compare coupling efficiency of a gap waveguide with symmetric configuration and asymmetric configuration illustrating that symmetric waveguide has a better coupling efficiency to the quantum dot. We also demonstrate that optimally placed quantum dot near a symmetric waveguide with 50 nm × 50 nm cross section can capture 80% of the spontaneous emission into a guided plasmon mode.
Bianucci, Pablo
Modern communications technology has encouraged an intimate connection between Semiconductor Physics and Optics, and this connection shows best in the combination of electron-confining structures with light-confining structures. Semiconductor quantum dots are systems engineered to trap electrons in a mesoscopic scale (the are composed of ≈ 10000 atoms), resulting in a behavior resembling that of atoms, but much richer. Optical microresonators are engineered to confine light, increasing its intensity and enabling a much stronger interaction with matter. Their combination opens a myriad of new directions, both in fundamental Physics and in possible applications. This dissertation explores both semiconductor quantum dots and microresonators, through experimental work done with semiconductor quantum dots and microsphere resonators spanning the fields of Quantum Optics, Quantum Information and Photonics; from quantum algorithms to polarization converters. Quantum Optics leads the way, allowing us to understand how to manipulate and measure quantum dots with light and to elucidate the interactions between them and microresonators. In the Quantum Information area, we present a detailed study of the feasibility of excitons in quantum dots to perform quantum computations, including an experimental demonstration of the single-qubit Deutsch-Jozsa algorithm performedin a single semiconductor quantum dot. Our studies in Photonics involve applications of microsphere resonators, which we have learned to fabricate and characterize. We present an elaborate description of the experimental techniques needed to study microspheres, including studies and proof of concept experiments on both ultra-sensitive microsphere sensors and whispering gallery mode polarization converters.
Nanobeam photonic crystal cavity quantum dot laser
Gong, Yiyang; Shambat, Gary; Sarmiento, Tomas; Harris, James S; Vuckovic, Jelena
2010-01-01
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is calculated. We study the cavity lasers under both 780 nm and 980 nm pump, finding thresholds as low as 0.3 uW and 19 uW for the two pump wavelengths, respectively. Finally, the nanobeam cavity laser wavelengths are tuned by up to 7 nm by employing a fiber taper in near proximity to the cavities. The fiber taper is used both to efficiently pump the cavity and collect the cavity emission.
Energy level statistics of quantum dots.
Tsau, Chien-Yu; Nghiem, Diu; Joynt, Robert; Woods Halley, J
2007-05-08
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner-Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots.
Many electron effects in semiconductor quantum dots
Indian Academy of Sciences (India)
R K Pandey; Manoj K Harbola; V Ranjan; Vijay A Singh
2003-01-01
Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as ‘artificial atoms’ by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the local density approximation (LDA) and the Harbola–Sahni (HS) scheme. HS is free of the selfinteraction error of the LDA. Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of the size and shape dependence of the level spacing. Scaling laws for the Hubbard ‘’ are established.
Energy level statistics of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Tsau, C-Y [University of Wisconsin-Madison, Madison, WI 53706 (United States); Nghiem, Diu [University of Wisconsin-Madison, Madison, WI 53706 (United States); Joynt, Robert [University of Wisconsin-Madison, Madison, WI 53706 (United States); Halley, J Woods [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)
2007-05-08
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner-Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots.
Energy level statistics of quantum dots
Tsau, Chien-Yu; Nghiem, Diu; Joynt, Robert; Halley, J. Woods
2007-05-01
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner-Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots.
Vibration Spectrums of Polar Interface Optical Phonons in GaAs/AlAs Cylindrical Quantum Dots
Institute of Scientific and Technical Information of China (English)
ZHANG Li
2005-01-01
The dispersions of the top interface optical phonons and the side interface optical phonons in cylindrical quantum dots are solved by using the dielectric continuum model. Our calculation mainly focuses on the frequency dependence of the IO phonon modes on the wave-vector and quantum number in the cylindrical quantum dot system.Results reveal that the frequency of top interface optical phonon sensitively depends on the discrete wave-vector in z direction and the azimuthal quantum number, while that of the side interface optical phonon mode depends on the radial and azimuthal quantum numbers. These features are obviously different from those in quantum well, quantum well wire,and spherical quantum dot systems. The limited frequencies of interface optical modes for the large wave-vector or quantum number approach two certain constant values, and the math and physical reasons for this feature have been explained reasonably.
Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells
Directory of Open Access Journals (Sweden)
LI Zhi-min
2017-08-01
Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.
DLTS measurements on GaSb/GaAs quantum dots
Energy Technology Data Exchange (ETDEWEB)
Hoegner, Annika; Nowozin, Tobias; Marent, Andreas; Bimberg, Dieter [Institut fuer Festkoerperphysik, TU Berlin (Germany); Tseng, Chi-Che [Institute of Photonics Technologies, NTHU (China); Lin, Shih-Yen [Institute of Optoelectronic Sciences, NTOU (China)
2010-07-01
Memory devices based on hole storage in self-organized quantum dots offer significant advantages with respect to storage time and scalability. Recently, we demonstrated a first prototype based on InAs/GaAs quantum dots at low temperatures. To enable feasible storage times at room temperature the localisation energy of the quantum dots has to be increased by using other material systems. A first step in this direction is the use of GaSb quantum dots within a GaAs matrix. We have characterized self-organized GaSb/GaAs quantum dots embedded into a n{sup +}p-diode structure. DLTS measurements on hole emission were conducted and yield a strong peak from which a mean emission energy of about 400 meV can be extracted. The reference sample without the quantum dots (containing only the wetting layer) shows no such peak.
Electric and Magnetic Interaction between Quantum Dots and Light
DEFF Research Database (Denmark)
Tighineanu, Petru
a future challenge for the droplet-epitaxy technique. A multipolar theory of spontaneous emission from quantum dots is developed to explain the recent observation that In(Ga)As quantum dots break the dipole theory. The analysis yields a large mesoscopic moment, which contains magnetic-dipole and electric......-matter interaction of both electric and magnetic character. Our study demonstrates that In(Ga)As quantum dots lack parity symmetry and, as consequence, can be employed for locally probing the parity symmetry of complex photonic nanostructures. This opens the prospect for interfacing quantum dots with optical......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...
Quantum dot spectroscopy using a single phosphorus donor
Büch, Holger; Fuechsle, Martin; Baker, William; House, Matthew G.; Simmons, Michelle Y.
2015-12-01
Using a deterministic single P donor placed with atomic precision accuracy next to a nanoscale silicon quantum dot, we present a way to analyze the energy spectrum of small quantum dots in silicon by tunnel-coupled transport measurements. The energy-level structure of the quantum dot is observed as resonance features within the transport bias triangles when the donor chemical potential is aligned with states within the quantum dot as confirmed by a numeric rate equation solver SIMON. This technique allows us to independently extract the quantum dot level structure irrespective of the density of states in the leads. Such a method is useful for the investigation of silicon quantum dots in the few-electron regime where the level structure is governed by an intricate interplay between the spin- and the valley-orbit degrees of freedom.
Decoherence in Nearly-Isolated Quantum Dots
DEFF Research Database (Denmark)
Folk, J.; M. Marcus, C.; Harris jr, J.
2000-01-01
Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single......-particle level spacing, but is greatly suppressed for temperature greater than the level spacing, suggesting that inelastic scattering or other dephasing mechanisms dominate in this regime....
Quantum-dot excitons in nanostructured environments
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2011-01-01
The interaction between light and quantum-dot (QD) excitons is strongly influenced by the environment in which the QD is placed. We have investigated the interaction by measuring the time-resolved spontaneous-emission rate of QD excitons in different nanostructured environments. Thereby, we have...... is demonstrated and the influence of disorder is discussed. The findings have a strong bearing on future nanophotonic devices....
Quantum-dot excitons in nanostructured environments
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Stobbe, Søren; Lodahl, Peter
2010-01-01
The interaction between light and quantum-dot (QD) excitons is strongly influenced by the environment in which the QD is placed. We have investigated the interaction by measuring the time-resolved spontaneous-emission rate of QD excitons in different nanostructured environments. Thereby, we have...... is demonstrated and the influence of disorder is discussed. The findings have a strong bearing on future nanophotonic devices....
Quantum dot/glycol chitosan fluorescent nanoconjugates
Mansur, Alexandra AP; Herman S. Mansur
2015-01-01
In this study, novel carbohydrate-based nanoconjugates combining chemically modified chitosan with semiconductor quantum dots (QDs) were designed and synthesised via single-step aqueous route at room temperature. Glycol chitosan (G-CHI) was used as the capping ligand aiming to improve the water solubility of the nanoconjugates to produce stable and biocompatible colloidal systems. UV-visible (UV–vis) spectroscopy, photoluminescence (PL) spectroscopy, and Fourier transform infrared (FTIR) spec...
Depleted bulk heterojunction colloidal quantum dot photovoltaics
Energy Technology Data Exchange (ETDEWEB)
Barkhouse, D.A.R. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); IBM Thomas J. Watson Research Center, Kitchawan Road, Yorktown Heights, NY, 10598 (United States); Debnath, Ratan; Kramer, Illan J.; Zhitomirsky, David; Levina, Larissa; Sargent, Edward H. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Pattantyus-Abraham, Andras G. [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Quantum Solar Power Corporation, 1055 W. Hastings, Ste. 300, Vancouver, BC, V6E 2E9 (Canada); Etgar, Lioz; Graetzel, Michael [Laboratory for Photonics and Interfaces, Institute of Chemical Sciences and Engineering, School of Basic Sciences, Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)
2011-07-26
The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
The Silicon:Colloidal Quantum Dot Heterojunction
Masala, Silvia
2015-10-13
A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics
Barkhouse, D. Aaron R.
2011-05-26
The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Pharmaceutical and biomedical applications of quantum dots.
Bajwa, Neha; Mehra, Neelesh K; Jain, Keerti; Jain, Narendra K
2016-05-01
Quantum dots (QDs) have captured the fascination and attention of scientists due to their simultaneous targeting and imaging potential in drug delivery, in pharmaceutical and biomedical applications. In the present study, we have exhaustively reviewed various aspects of QDs, highlighting their pharmaceutical and biomedical applications, pharmacology, interactions, and toxicological manifestations. The eventual use of QDs is to dramatically improve clinical diagnostic tests for early detection of cancer. In recent years, QDs were introduced to cell biology as an alternative fluorescent probe.
The pinning effect in quantum dots
Energy Technology Data Exchange (ETDEWEB)
Monisha, P. J., E-mail: pjmonisha@gmail.com [School of Physics, University of Hyderabad, Hyderabad-500046 (India); Mukhopadhyay, Soma [Department of Physics, D V R College of Engineering and Technology, Hyderabad-502285 (India)
2014-04-24
The pinning effect is studied in a Gaussian quantum dot using the improved Wigner-Brillouin perturbation theory (IWBPT) in the presence of electron-phonon interaction. The electron ground state plus one phonon state is degenerate with the electron in the first excited state. The electron-phonon interaction lifts the degeneracy and the first excited states get pinned to the ground state plus one phonon state as we increase the confinement frequency.
Electrically addressing a single self-assembled quantum dot
Ellis, D J P; Atkinson, P; Ritchie, D A; Shields, A J
2006-01-01
We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot, from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet-oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot.
Electron States of Few-Electron Quantum Dots
Institute of Scientific and Technical Information of China (English)
戴振宏; 孙金祚; 张立德; 李作宏; 黄士勇; 隋鹏飞
2002-01-01
We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method based on the Gaussian basis. Our emphasis is on the energy level calculation for quantum dots. The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well. Some valuable results, such as the rearrangement of the energy level, have been obtained.
Controllability of multi-partite quantum systems and selective excitation of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Schirmer, S G [Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA (United Kingdom); Pullen, I C H [Department of Applied Mathematics and Computing, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Solomon, A I [Department of Physics and Astronomy, Open University, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)
2005-10-01
We consider the degrees of controllability of multi-partite quantum systems, as well as necessary and sufficient criteria for each case. The results are applied to the problem of simultaneous control of an ensemble of quantum dots with a single laser pulse. Finally, we apply optimal control techniques to demonstrate selective excitation of individual dots for a simultaneously controllable ensemble of quantum dots.
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Ates, Serkan; Reitzenstein, S.;
2010-01-01
The coupling between a quantum dot (QD) and a micropillar cavity is experimentally investigated by performing time-resolved, correlation, and two-photon interference measurements. The Jaynes-Cummings model including dissipative Lindblad terms and dephasing is analyzed, and all the parameters...... for the model are experimentally determined allowing for a complete comparison between experiment and theory....
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
Claudon, Julien; Munsch, Matthieu; Bleuse, Joel;
2012-01-01
Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....
Quantum transport through an array of quantum dots.
Chen, Shuguang; Xie, Hang; Zhang, Yu; Cui, Xiaodong; Chen, Guanhua
2013-01-07
The transient current through an array of as many as 1000 quantum dots is simulated with two newly developed quantum mechanical methods. To our surprise, upon switching on the bias voltage, the current increases linearly with time before reaching its steady state value. And the time required for the current to reach its steady state value is proportional to the length of the array, and more interestingly, is exactly the time for a conducting electron to travel through the array at the Fermi velocity. These quantum phenomena can be understood by a simple analysis on the energetics of an equivalent classical circuit. An experimental design is proposed to confirm the numerical findings.
Tuning the quantum critical crossover in quantum dots
Murthy, Ganpathy
2005-03-01
Quantum dots with large Thouless number g embody a regime where both disorder and interactions can be treated nonperturbatively using large-N techniques (with N=g) and quantum phase transitions can be studied. Here we focus on dots where the noninteracting Hamiltonian is drawn from a crossover ensemble between two symmetry classes, where the crossover parameter introduces a new, tunable energy scale independent of and much smaller than the Thouless energy. We show that the quantum critical regime, dominated by collective critical fluctuations, can be accessed at the new energy scale. The nonperturbative physics of this regime can only be described by the large-N approach, as we illustrate with two experimentally relevant examples. G. Murthy, PRB 70, 153304 (2004). G. Murthy, R. Shankar, D. Herman, and H. Mathur, PRB 69, 075321 (2004)
Quantitative analysis of quantum dot dynamics and emission spectra in cavity quantum electrodynamics
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Lodahl, Peter
2013-01-01
We present detuning-dependent spectral and decay-rate measurements to study the difference between the spectral and dynamical properties of single quantum dots embedded in micropillar and photonic crystal cavities. For the micropillar cavity, the dynamics is well described by the dissipative Jaynes......–Cummings model, whereas systematic deviations are observed for the emission spectra. The discrepancy for the spectra is attributed to the coupling of other exciton lines to the cavity and interference of different propagation paths toward the detector of the fields emitted by the quantum dot. In contrast......, quantitative information about the system can readily be extracted from the dynamical measurements. In the case of photonic crystal cavities, we observe an anti-crossing in the spectra when detuning a single quantum dot through resonance, which is the spectral signature of a strong coupling. However, time...
Investigation of Quantum Dot Lasers
2007-11-02
Lett. 79, 722 (2001). 8. Report of Inventions None. 9. List of Scientific Personnel Supported, Degrees, Awards and Honors Siddhartha ...Ghosh, GSRA Sameer Pradhan, GSRA Sasan Fathpour, GSRA Zetian Mi, GSRA Siddhartha Ghosh, Ph.D., “Growth of In(Ga)As/GaAs self-organized quantum
Tamandani, Shahryar; Darvish, Ghafar
2017-02-01
We present an analytical method to calculate photon absorption coefficient in mono and bilayer circular graphene quantum dots (CGQDs). We use kobo equation to extract new closed relation as the main goal. First, we calculate real and imaginary part of optical conductance separately. Then, joint density of states is obtained using a new relation that was extracted for the energy levels of mono and bilayer circular grapheme quantum dots. In this work we use closed equations to calculate energy levels in CGQDs. Next we obtain a new closed formula to calculate the photon absorption coefficient. The results show that the absorption coefficient is related to the size of CGQDs and number of layers. The photon absorption coefficient becomes lower with larger size of CGQDs. It is seen that the results of our method is compatible with the results of practical works. We also compare photon absorption in biased and unbiased bilayer CGQDs and investigate the effect of external magnetic field on photon absorption. rights reserved
Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals
Energy Technology Data Exchange (ETDEWEB)
See, Gloria G. [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States); Xu, Lu; Nuzzo, Ralph G. [Department of Chemistry, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801 (United States); Sutanto, Erick; Alleyne, Andrew G. [Mechanical Science and Engineering Department, University of Illinois at Urbana-Champaign, 154 Mechanical Engineering Building, Urbana, Illinois 61801 (United States); Cunningham, Brian T. [Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801 (United States); Department of Bioengineering, University of Illinois at Urbana-Champaign, 1270 Digital Computer Laboratory, MC-278, Urbana, Illinois 61801 (United States)
2015-08-03
Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure.
Synthesis of CdSe Quantum Dots Using Fusarium oxysporum
Takaaki Yamaguchi; Yoshijiro Tsuruda; Tomohiro Furukawa; Lumi Negishi; Yuki Imura; Shohei Sakuda; Etsuro Yoshimura; Michio Suzuki
2016-01-01
CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum) were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were pr...
Core–shell quantum dots: Properties and applications
Energy Technology Data Exchange (ETDEWEB)
Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)
2015-07-05
Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.
Thermospin diode effect based on a quantum dot system
Energy Technology Data Exchange (ETDEWEB)
Lu, Xin, E-mail: xglu@fudan.edu.cn [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Zhang, Lifa [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Morrel, William G. [School of Medicine, University of California San Francisco, San Francisco, CA 94122 (United States); Wu, Chang-Qin [Surface Physics Laboratory (National Key Laboratory) and Department of Physics, Fudan University, Shanghai 200433 (China); Li, Baowen, E-mail: phylibw@nus.edu.sg [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); NUS Graduate School for Integrative Sciences and Engineering, Singapore 117456 (Singapore)
2014-11-14
The rectification of spin current driven by a temperature difference in a simple model consisting of a quantum dot connected to two ferromagnetic leads has been studied using the rate equation technique. In addition to the dot level, the magnitude of thermospin current rectification depends on the temperature bias across the system, the asymmetry parameter and the Coulomb charging energy, where the last two parameters are necessary conditions for rectification to occur in the system. The thermospin current rectification becomes analytically simplified at the limitation condition of asymmetry. With an applied Zeeman magnetic field, an ideal 100% rectification of thermospin current can be obtained at specific dot energies, which can be controlled by an external gate voltage. - Highlights: • Model of thermal induced spin current diode made of FM leads and QD. • Asymmetric character is essential for occurring current rectification. • Coulomb charging energy plays indispensable role in rectification. • High rectification of thermospin current is obtained with Zeeman magnetic field.
Single-electron Spin Resonance in a Quadruple Quantum Dot
Otsuka, Tomohiro; Nakajima, Takashi; Delbecq, Matthieu R.; Amaha, Shinichi; Yoneda, Jun; Takeda, Kenta; Allison, Giles; Ito, Takumi; Sugawara, Retsu; Noiri, Akito; Ludwig, Arne; Wieck, Andreas D.; Tarucha, Seigo
2016-08-01
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of each electron spin resonance is possible.
Zhao, Tianshuo; Goodwin, Earl D; Guo, Jiacen; Wang, Han; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R
2016-09-22
Advanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.
Charge Carrier Hopping Dynamics in Homogeneously Broadened PbS Quantum Dot Solids.
Gilmore, Rachel H; Lee, Elizabeth M Y; Weidman, Mark C; Willard, Adam P; Tisdale, William A
2017-02-08
Energetic disorder in quantum dot solids adversely impacts charge carrier transport in quantum dot solar cells and electronic devices. Here, we use ultrafast transient absorption spectroscopy to show that homogeneously broadened PbS quantum dot arrays (σhom(2):σinh(2) > 19:1, σinh/kBT quantum dot batches are sufficiently monodisperse (δ ≲ 3.3%). The homogeneous line width is found to be an inverse function of quantum dot size, monotonically increasing from ∼25 meV for the largest quantum dots (5.8 nm diameter/0.92 eV energy) to ∼55 meV for the smallest (4.1 nm/1.3 eV energy). Furthermore, we show that intrinsic charge carrier hopping rates are faster for smaller quantum dots. This finding is the opposite of the mobility trend commonly observed in device measurements but is consistent with theoretical predictions. Fitting our data to a kinetic Monte Carlo model, we extract charge carrier hopping times ranging from 80 ps for the smallest quantum dots to over 1 ns for the largest, with the same ethanethiol ligand treatment. Additionally, we make the surprising observation that, in slightly polydisperse (δ ≲ 4%) quantum dot solids, structural disorder has a greater impact than energetic disorder in inhibiting charge carrier transport. These findings emphasize how small improvements in batch size dispersity can have a dramatic impact on intrinsic charge carrier hopping behavior and will stimulate further improvements in quantum dot device performance.
Quantum dot mediated imaging of atherosclerosis
Energy Technology Data Exchange (ETDEWEB)
Jayagopal, Ashwath; Haselton, Frederick R [Department of Biomedical Engineering, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States); Su Yanru; Blakemore, John L; Linton, MacRae F; Fazio, Sergio [Department of Medicine, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States)], E-mail: rick.haselton@vanderbilt.edu
2009-04-22
The progression of atherosclerosis is associated with leukocyte infiltration within lesions. We describe a technique for the ex vivo imaging of cellular recruitment in atherogenesis which utilizes quantum dots (QD) to color-code different cell types within lesion areas. Spectrally distinct QD were coated with the cell-penetrating peptide maurocalcine to fluorescently-label immunomagnetically isolated monocyte/macrophages and T lymphocytes. QD-maurocalcine bioconjugates labeled both cell types with a high efficiency, preserved cell viability, and did not perturb native leukocyte function in cytokine release and endothelial adhesion assays. QD-labeled monocyte/macrophages and T lymphocytes were reinfused in an ApoE{sup -/-} mouse model of atherosclerosis and age-matched controls and tracked for up to four weeks to investigate the incorporation of cells within aortic lesion areas, as determined by oil red O (ORO) and immunofluorescence ex vivo staining. QD-labeled cells were visible in atherosclerotic plaques within two days of injection, and the two cell types colocalized within areas of subsequent ORO staining. Our method for tracking leukocytes in lesions enables high signal-to-noise ratio imaging of multiple cell types and biomarkers simultaneously within the same specimen. It also has great utility in studies aimed at investigating the role of distinct circulating leukocyte subsets in plaque development and progression.
Gain dynamics and saturation in semiconductor quantum dot amplifiers
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher
2004-01-01
Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... carrier populations in terms of a simple rate equation model. Based on the steady-state and small-signal properties of the model, we analyse and discuss the optical modulation response and the four-wave mixing properties of QD semiconductor optical amplifiers, in particular emphasizing the role...
Energy Technology Data Exchange (ETDEWEB)
Weber, Carsten
2008-07-01
This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and
Quantum-Dot-Based Telecommunication-Wavelength Quantum Relay
Huwer, J.; Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Felle, M.; Farrer, I.; Ritchie, D. A.; Penty, R. V.
2017-08-01
The development of quantum relays for long-haul and attack-proof quantum communication networks operating with weak coherent laser pulses requires entangled photon sources at telecommunication wavelengths with intrinsic single-photon emission for most practical implementations. Using a semiconductor quantum dot emitting entangled photon pairs in the telecommunication O band, we demonstrate a quantum relay fulfilling both of these conditions. The system achieves a maximum fidelity of 94.5% for implementation of a standard four-state protocol with input states generated by a laser. We further investigate robustness against frequency detuning of the narrow-band input and perform process tomography of the teleporter, revealing operation for arbitrary pure input states, with an average gate fidelity of 83.6%. The results highlight the potential of semiconductor light sources for compact and robust quantum-relay technology that is compatible with existing communication infrastructures.
Evolution of quasistationary electron spectrum in open spherical quantum dot
Directory of Open Access Journals (Sweden)
M.V. Tkach
2008-09-01
Full Text Available The evolution of electron quasistationary spectrum in open spherical quantum dot is under study within the effective mass and rectangular potential model. Within the framework of the S-matrix model the exact solution of Schrödinger equation is obtained in general analytical form. It is shown, for the first time, that the generalized resonance energies and widths introduced as the parameters defining the probability distribution function (over the energy or quasi momentum of electron location in quantum dot, adequately characterize the evolution of its quasistationary states (contrary to the S-matrix poles in the whole range of barrier thickness: from zero (free states up to the infinity (stationary bound states are under the barrier and virtual and free states are above it.
Quantum dots for next-generation photovoltaics
Directory of Open Access Journals (Sweden)
Octavi E. Semonin
2012-11-01
Full Text Available Colloidal quantum-confined semiconductor nanostructures are an emerging class of functional material that are being developed for novel solar energy conversion strategies. One of the largest losses in a bulk or thin film solar cell occurs within a few picoseconds after the photon is absorbed, as photons with energy larger than the semiconductor bandgap produce charge-carriers with excess kinetic energy, which is then dissipated via phonon emission. Semiconductor nanostructures, where at least one dimension is small enough to produce quantum confinement effects, provide new pathways for controlling energy flow and therefore have the potential to increase the efficiency of the primary photoconversion step. In this review, we provide the current status of research efforts towards utilizing the unique properties of colloidal quantum dots (nanocrystals confined in three dimensions in prototype solar cells and demonstrate that these unique systems have the potential to bypass the Shockley-Queisser single-junction limit for solar photon conversion.
Production and targeting of monovalent quantum dots.
Seo, Daeha; Farlow, Justin; Southard, Kade; Jun, Young-Wook; Gartner, Zev J
2014-10-23
The multivalent nature of commercial quantum dots (QDs) and the difficulties associated with producing monovalent dots have limited their applications in biology, where clustering and the spatial organization of biomolecules is often the object of study. We describe here a protocol to produce monovalent quantum dots (mQDs) that can be accomplished in most biological research laboratories via a simple mixing of CdSe/ZnS core/shell QDs with phosphorothioate DNA (ptDNA) of defined length. After a single ptDNA strand has wrapped the QD, additional strands are excluded from the surface. Production of mQDs in this manner can be accomplished at small and large scale, with commercial reagents, and in minimal steps. These mQDs can be specifically directed to biological targets by hybridization to a complementary single stranded targeting DNA. We demonstrate the use of these mQDs as imaging probes by labeling SNAP-tagged Notch receptors on live mammalian cells, targeted by mQDs bearing a benzylguanine moiety.
Amphoteric CdSe nanocrystalline quantum dots.
Islam, Mohammad A
2008-06-25
The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.
Local Franck-Condon factors in suspended carbon nanotube quantum dots
Energy Technology Data Exchange (ETDEWEB)
Cavaliere, Fabio; Mariani, Eros; Leturcq, Renaud; Stampfer, Christoph; Sassetti, Maura, E-mail: cavalier@fisica.unige.i
2010-11-01
We investigate the effects of the coupling between quantized vibrational modes (vibrons) and electronic degrees of freedom in suspended carbon nanotube quantum dots. The elastic deformations couple both to the total dot charge and to its spatial density fluctuations. The latter, neglected in the Anderson-Holstein model, have profound consequences if the size of the vibron and of the dot do not coincide, as is generically the case in experimental devices. When the vibron is smaller than the quantum dot, spatially varying local Franck-Condon factors emerge with striking effects on the transport properties of the system. The theoretical results are supported by our experimental observations.
Spectral density of Cooper pairs in two level quantum dot-superconductors Josephson junction
Dhyani, A.; Rawat, P. S.; Tewari, B. S.
2016-09-01
In the present paper, we report the role of quantum dot energy levels on the electronic spectral density for a two level quantum dot coupled to s-wave superconducting leads. The theoretical arguments in this work are based on the Anderson model so that it necessarily includes dot energies, single particle tunneling and superconducting order parameter for BCS superconductors. The expression for single particle spectral function is obtained by using the Green's function equation of motion technique. On the basis of numerical computation of spectral function of superconducting leads, it has been found that the charge transfer across such junctions can be controlled by the positions and availability of the dot levels.
Nonlinear laser dynamics from quantum dots to cryptography
Lüdge, Kathy
2012-01-01
A distinctive discussion of the nonlinear dynamical phenomena of semiconductor lasers. The book combines recent results of quantum dot laser modeling with mathematical details and an analytic understanding of nonlinear phenomena in semiconductor lasers and points out possible applications of lasers in cryptography and chaos control. This interdisciplinary approach makes it a unique and powerful source of knowledge for anyone intending to contribute to this field of research.By presenting both experimental and theoretical results, the distinguished authors consider solitary lase
Quantum Dots: An Experiment for Physical or Materials Chemistry
Winkler, L. D.; Arceo, J. F.; Hughes, W. C.; DeGraff, B. A.; Augustine, B. H.
2005-01-01
An experiment is conducted for obtaining quantum dots for physical or materials chemistry. This experiment serves to both reinforce the basic concept of quantum confinement and providing a useful bridge between the molecular and solid-state world.
Resonance fluorescence from a telecom-wavelength quantum dot
Al-Khuzheyri, R; Huwer, J; Santana, T S; Szymanska, J Skiba-; Felle, M; Ward, M B; Stevenson, R M; Farrer, I; Tanner, M G; Hadfield, R H; Ritchie, D A; Shields, A J; Gerardot, B D
2016-01-01
We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime--a hallmark of resonance fluorescence. The measured resonance-fluorescence spectra allow us to rule out pure dephasing as a significant decoherence mechanism in these quantum dots. Combined with numerical simulations, the experimental results provide robust characterisation of charge noise in the environment of the quantum dot. Resonant control of the quantum dot opens up new possibilities for on-demand generation of indistinguishable single photons at telecom wavelengths as well as quantum optics experiments and direct manipulation of solid-state qubits in telecom-wavelength quantum dots.
Electrostatically defined silicon quantum dots with counted antimony donor implants
Energy Technology Data Exchange (ETDEWEB)
Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2016-02-08
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.
Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot
DEFF Research Database (Denmark)
Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal
2016-01-01
unprecedented potential to be controlled with atomic layer accuracy without random alloying. We show for the first time that crystal phase quantum dots are a source of pure single-photons and cascaded photon-pairs from type II transitions with excellent optical properties in terms of intensity and line width...... quantum optical properties for single photon application and quantum optics.......We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offer...
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Ates, Serkan; Reitzenstein, S.
2010-01-01
The coupling between a quantum dot (QD) and a micropillar cavity is experimentally investigated by performing time-resolved, correlation, and two-photon interference measurements. The Jaynes-Cummings model including dissipative Lindblad terms and dephasing is analyzed, and all the parameters...
2014-01-01
We investigate coherent single surface-plasmon transport in a metal nanowire strongly coupled to two colloidal quantum dots. Analytical expressions are obtained for the transmission and reflection coefficients by solving the corresponding eigenvalue equation. Remote entanglement of the wave functions of the two quantum dots can be created if the inter-dot distance is equal to a multiple half-wavelength of the surface plasmon. Furthermore, by applying classical laser pulses to the quantum dots...
Quantum state preparation in semiconductor dots by adiabatic rapid passage
Wu, Yanwen; Piper, I.M.; Ediger, M.; Brereton, P.; Schmidgall, E. R.; Hugues, M.; Hopkinson, M.; Phillips, R.T.
2010-01-01
Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We d...
Coupled quantum dot-ring structures by droplet epitaxy
Energy Technology Data Exchange (ETDEWEB)
Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S, E-mail: stefano.sanguinetti@unimib.it [L-NESS and Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)
2011-05-06
The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.
Composition maps in self-assembled alloy quantum dots.
Medhekar, N V; Hegadekatte, V; Shenoy, V B
2008-03-14
Nanoscale variations in composition arising from the competition between chemical mixing effects and elastic relaxation can substantially influence the electronic and optical properties of self-assembled alloy quantum dots. Using a combination of finite element and quadratic programming optimization methods, we have developed an efficient technique to compute the equilibrium composition profiles in strained quantum dots. We find that the composition profiles depend strongly on the morphological features such as the slopes and curvatures of their surfaces and the presence of corners and edges as well as the ratio of the strain and chemical mixing energy densities. More generally, our approach provides a means to quantitatively model the interplay among the composition variations, the temperature, the strain, and the shapes of small-scale lattice-mismatched structures.
Current noise in a vibrating quantum dot array
DEFF Research Database (Denmark)
Flindt, Christian; Novotny, Tomas; Jauho, Antti-Pekka
2004-01-01
We develop methods for calculating the zero-frequency noise for quantum shuttles, i.e., nanoelectromechanical devices where the mechanical motion is quantized. As a model system we consider a three-dot array, where the internal electronic coherence both complicates and enriches the physics. Two...... different formulations are presented: (i) quantum regression theorem and (ii) the counting variable approach. It is demonstrated, both analytically and numerically, that the two formulations yield identical results, when the conditions of their respective applicability are fulfilled. We describe the results......, shuttling versus cotunneling). In the case of weak interdot coupling, the electron transport proceeds via sequential tunneling between neighboring dots. A simple rate equation with the rates calculated analytically from the P(E) theory is developed and shown to agree with the full numerics....
Colloidal Quantum Dot Photovoltaics: A Path Forward
Kramer, Illan J.
2011-11-22
Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.
Directory of Open Access Journals (Sweden)
A. Berthelot
2010-01-01
We emphasize the generality and the versatility of our model where the inclusion of asymmetric jump processes appears as an essential extension for the understanding of semiconductor quantum dot physics.
An Exciton Bound to a Neutral Donor in Quantum Dots
Institute of Scientific and Technical Information of China (English)
解文方
2002-01-01
The binding energies for an exciton (X) trapped in a two-dimensional quantum dot by a neutral donor have been calculated using the method of few-body physics for the heavy hole (σ= 0.196) and the light hole (σr = 0.707).We find that the (D0, X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy increases with the decrease of the dot radius. At dot radius R →∞, we compare our calculated result with the previous results.
Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula
Institute of Scientific and Technical Information of China (English)
L(U) Rong; ZHANG Guang-Ming
2005-01-01
Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.
Implementing of Quantum Cloning with Spatially Separated Quantum Dot Spins
Wen, Jing-Ji; Yeon, Kyu-Hwang; Du, Xin; Lv, Jia; Wang, Ming; Wang, Hong-Fu; Zhang, Shou
2016-07-01
We propose some schemes for implementing optimal symmetric (asymmetric) 1 → 2 universal quantum cloning, optimal symmetric (asymmetric) 1 → 2 phase-covariant cloning, optimal symmetric 1 → 3 economical phase-covariant cloning and optimal symmetric 1 → 3 economical real state cloning with spatially separated quantum dot spins by choosing the single-qubit rotation angles appropriately. The decoherences of the spontaneous emission of QDs, cavity decay and fiber loss are suppressed since the effective long-distance off-resonant interaction between two distant QDs is mediated by the vacuum fields of the fiber and cavity, and during the whole process no system is excited.
Systematic optimization of quantum junction colloidal quantum dot solar cells
Liu, Huan
2012-01-01
The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.
Can the oscillator strength of the quantum dot bandgap transition exceed unity?
Hens, Z.
2008-10-01
We discuss the apparent contradiction between the Thomas-Reiche-Kuhn sum rule for oscillator strengths and recent experimental data on the oscillator strength of the band gap transition of quantum dots. Starting from two simple single electron model systems, we show that the sum rule does not limit this oscillator strength to values below unity, or below the number of electrons in the highest occupied single electron state. The only upper limit the sum rule imposes on the oscillator strength of the quantum dot band gap transition is the total number of electrons in the quantum dot.
ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus
Energy Technology Data Exchange (ETDEWEB)
Uddandarao, Priyanka, E-mail: uddandaraopriyanka@gmail.com; B, Raj Mohan, E-mail: rajmohanbala@gmail.com
2016-05-15
Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.
A Nanowire-Based Plasmonic Quantum Dot Laser.
Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko
2016-04-13
Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.
High-resolution photoluminescence studies of single semiconductor quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has dev...
Transport through Zero-Dimensional States in a Quantum Dot
Kouwenhoven, Leo P.; Wees, Bart J. van; Harmans, Kees J.P.M.; Williamson, John G.
1990-01-01
We have studied the electron transport through zero-dimensional (0D) states. 0D states are formed when one-dimensional edge channels are confined in a quantum dot. The quantum dot is defined in a two-dimensional electron gas with a split gate technique. To allow electronic transport, connection to
Electron spin and charge in semiconductor quantum dots
Elzerman, J.M.
2004-01-01
In this thesis, the spin and charge degree of freedom of electrons in semiconductor lateral and vertical quantum dots are experimentally investigated. The lateral quantum dot devices are defined in a two-dimensional electron gas (2DEG) below the surface of a GaAs/AlGaAs heterostructure, by metallic
Exciton dephasing in single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis;
2000-01-01
. The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...
Negative Trions Trapped by a Spherical Parabolic Quantum Dot
Institute of Scientific and Technical Information of China (English)
无
2006-01-01
In this paper, a negatively charged exciton trapped by a spherical parabolic quantum dot has been investigated. The energy spectra of low-lying states are calculated by means of matrix diagonalization. The important feature of the low-lying states of the negatively charged excitons in a spherical quantum dot is obtained via an analysis of the energy spectra.
Imaging vasculature and lymphatic flow in mice using quantum dots
DEFF Research Database (Denmark)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan
2009-01-01
Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...
Imaging vasculature and lymphatic flow in mice using quantum dots
DEFF Research Database (Denmark)
Ballou, Byron; Ernst, Lauren A.; Andreko, Susan
2009-01-01
Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We deta...
Fast synthesize ZnO quantum dots via ultrasonic method.
Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu
2016-05-01
Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots.
Electron transport and coherence in semiconductor quantum dots and rings
Van der Wiel, W.G.
2002-01-01
A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that
Miralaie, M.; Leilaeioun, M.; Abbasian, K.
2013-01-01
In this work, we have modeled silicon quantum dot (QD)-based single-electron transistors (SETs) operating at room temperature and investigated the effect of the QD's energy-level broadening on the performance of the SET. First we obtained the energy levels and corresponding wave functions for spherical Si QDs by solving the coupled Schrödinger-Poisson equations in three dimensions. Then, we demonstrated different tunneling current rates for separated energy levels by considering nonequal energy-level broadenings. Accordingly, an expression for the corresponding tunneling rates in the quantum Coulomb blockade regime was derived. In the next step, the transconductance characteristics of the Si QD SET device with Coulomb oscillations were simulated, and their differences from previously investigated metal-based SETs were demonstrated. Finally, by applying different bias voltages, we determined the effect of temperature variations on the transconductance characteristics.
Gates controlled parallel-coupled bilayer graphene double quantum dot
Wang, Lin-Jun; Wei, Da; Cao, Gang; Tu, Tao; Xiao, Ming; Guo, Guang-Can; Chang, A M
2011-01-01
Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled bilayer graphene double quantum dot. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.
Self-polarization in spherical quantum dot
Directory of Open Access Journals (Sweden)
Stojanović Dušanka P.
2015-01-01
Full Text Available The electronic structures of CdS quantum dot (QD with dielectric mismatch are calculated. Poisson equation is solved analitically in case of point charge placed inside semiconductor sphere embeded in dielectric matrix in case of different values of the dielectric permittivity of QD and matrix. The validity of the effective mass approximation for the conduction band is assumed. Schrödinger equation for one electron is solved analitically. On the basis of the Poisson equation solution self potential is examined and used as perturbation to calculate the self-polarization effect.
Graphene Quantum Dots for Theranostics and Bioimaging.
Schroeder, Kathryn L; Goreham, Renee V; Nann, Thomas
2016-10-01
Since their advent in the early 1990s, nanomaterials hold promise to constitute improved technologies in the biomedical area. In particular, graphene quantum dots (GQDs) were conjectured to produce new or improve current methods used for bioimaging, drug delivery, and biomarker sensors for early detection of diseases. This review article critically compares and discusses current state-of-the-art use of GQDs in biology and health sciences. It shows the ability of GQDs to be easily functionalised for use as a targeted multimodal treatment and imaging platform. The in vitro and in vivo toxicity of GQDs are explored showing low toxicity for many types of GQDs.
Hyper-parallel photonic quantum computation with coupled quantum dots
Ren, Bao-Cang; Deng, Fu-Guo
2014-01-01
It is well known that a parallel quantum computer is more powerful than a classical one. So far, there are some important works about the construction of universal quantum logic gates, the key elements in quantum computation. However, they are focused on operating on one degree of freedom (DOF) of quantum systems. Here, we investigate the possibility of achieving scalable hyper-parallel quantum computation based on two DOFs of photon systems. We construct a deterministic hyper-controlled-not (hyper-CNOT) gate operating on both the spatial-mode and the polarization DOFs of a two-photon system simultaneously, by exploiting the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics (QED). This hyper-CNOT gate is implemented by manipulating the four qubits in the two DOFs of a two-photon system without auxiliary spatial modes or polarization modes. It reduces the operation time and the resources consumed in quantum information processing, and it is more robust against the photonic dissipation noise, compared with the integration of several cascaded CNOT gates in one DOF. PMID:24721781
Colloidal-quantum-dot spasers and plasmonic amplifiers
Kress, Stephan J P; Rohner, Patrik; Kim, David K; Antolinez, Felipe V; Zaininger, Karl-Augustin; Jayanti, Sriharsha V; Richner, Patrizia; McPeak, Kevin M; Poulikakos, Dimos; Norris, David J
2016-01-01
Colloidal quantum dots are robust, efficient, and tunable emitters now used in lighting, displays, and lasers. Consequently, when the spaser, a laser-like source of surface plasmons, was first proposed, quantum dots were specified as the ideal plasmonic gain medium. Subsequent spaser designs, however, have required a single material to simultaneously provide gain and define the plasmonic cavity, an approach ill-suited to quantum dots and other colloidal nanomaterials. Here we develop a more open architecture that decouples the gain medium from the cavity, leading to a versatile class of quantum-dot-based spasers that allow controlled generation, extraction, and manipulation of plasmons. We first create high-quality-factor, aberration-corrected, Ag plasmonic cavities. We then incorporate quantum dots via electrohydrodynamic printing18,19 or drop-casting. Photoexcitation under ambient conditions generates monochromatic plasmons above threshold. This signal is extracted, directed through an integrated amplifier,...
Non-blinking quantum dot with a plasmonic nanoshell resonator
Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit
2015-02-01
Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.
Second-harmonic imaging of semiconductor quantum dots
DEFF Research Database (Denmark)
Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld;
2000-01-01
Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...... observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics....
Quantum dots in diagnostics and detection: principles and paradigms.
Pisanic, T R; Zhang, Y; Wang, T H
2014-06-21
Quantum dots are semiconductor nanocrystals that exhibit exceptional optical and electrical behaviors not found in their bulk counterparts. Following seminal work in the development of water-soluble quantum dots in the late 1990's, researchers have sought to develop interesting and novel ways of exploiting the extraordinary properties of quantum dots for biomedical applications. Since that time, over 10,000 articles have been published related to the use of quantum dots in biomedicine, many of which regard their use in detection and diagnostic bioassays. This review presents a didactic overview of fundamental physical phenomena associated with quantum dots and paradigm examples of how these phenomena can and have been readily exploited for manifold uses in nanobiotechnology with a specific focus on their implementation in in vitro diagnostic assays and biodetection.
LUMINESCENCE OF CADMIUM SULFIDE QUANTUM DOTS IN FLUOROPHOSPHATE GLASSES
Directory of Open Access Journals (Sweden)
Z. O. Lipatova
2015-03-01
Full Text Available Cadmium sulfide quantum dots are perspective materials in optics, medicine, biology and optoelectronics. Fluorophosphate glasses, doped with cadmium sulfide quantum dots, were examined in the paper. Heat treatment led to the formation of quantum dots with diameters equal to 2.8 nm, 3.0 nm and 3.8 nm. In view of such changes in the quantum dots size the fundamental absorption edge shift and the luminescence band are being displaced to the long wavelengths. Luminescence lifetime has been found to be dependent on the registration wavelength in the range from 450 to 700 nm. Obtained fluorophosphate glasses with CdS quantum dots can find their application as fluorescent materials with intensive luminescence band and long excited-state natural lifetime.
Interaction of porphyrins with CdTe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)
2011-05-13
Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.
Self-assembled quantum dots in a nanowire system for quantum photonics
Heiss, M.; Fontana, Y.; Gustafsson, A; Wüst, G.; Magen, C.; O’Regan, D. D.; Luo, J. W.; Ketterer, B.; Conesa-Boj, S.; Kuhlmann, A. V.; Houel, J.; Russo-Averchi, E.; Morante, J. R.; Cantoni, M.; Marzari, N.
2013-01-01
Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-innanowire...
Templated self-assembly of SiGe quantum dots
Energy Technology Data Exchange (ETDEWEB)
Dais, Christian
2009-08-19
This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three
The Electron－Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot
Institute of Scientific and Technical Information of China (English)
XIEWen-Fang; ZHUWu
2003-01-01
The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots are studied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method of numerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the binding energy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupled quantum dot as a function of the dot radius for different vaJues of the distance and the magnetic field strength.
Persistent currents in metallic rings containing a quantum dot
Energy Technology Data Exchange (ETDEWEB)
Machura, Lukasz [Institute of Physics, University of Silesia, Katowice (Poland); Silesian Center for Education and Interdisciplinary Research, University of Silesia, 41-500 Chorzów (Poland); Łuczka, Jerzy, E-mail: jerzy.luczka@us.edu.pl [Institute of Physics, University of Silesia, Katowice (Poland); Silesian Center for Education and Interdisciplinary Research, University of Silesia, 41-500 Chorzów (Poland)
2015-08-28
Currents in metallic rings with a quantum dot are studied in the framework of a Langevin equation for a magnetic flux passing through the ring. Two scenarios are considered: one in which thermal fluctuations of the dissipative part of the current are modeled by classical Johnson–Nyquist noise and one in which quantum character of thermal fluctuations is taken into account in terms of a quantum Smoluchowski equation. The impact of the amplitude and phase of the transmission coefficient of the electron through a quantum dot on current characteristics is analyzed. In tailored parameter regimes, both scenarios can exhibit the transition from para- to diamagnetic response of the current versus external magnetic flux. The type of response is more robust to changes of the amplitude of the transmission coefficient and more sensitive to changes of the phase around some values. - Highlights: • Langevin dynamics of the magnetic flux for classical and quantum Smoluchowski regimes. • Current-flux characteristics vs the amplitude and phase of the transmission coefficient. • Crucial role of the phase of the transmission coefficient. • Contribution to the development of effective control of current in mesoscopic rings.
Quantum dot labeling of mesenchymal stem cells
Directory of Open Access Journals (Sweden)
Cascio Wayne E
2007-11-01
Full Text Available Abstract Background Mesenchymal stem cells (MSCs are multipotent cells with the potential to differentiate into bone, cartilage, fat and muscle cells and are being investigated for their utility in cell-based transplantation therapy. Yet, adequate methods to track transplanted MSCs in vivo are limited, precluding functional studies. Quantum Dots (QDs offer an alternative to organic dyes and fluorescent proteins to label and track cells in vitro and in vivo. These nanoparticles are resistant to chemical and metabolic degradation, demonstrating long term photostability. Here, we investigate the cytotoxic effects of in vitro QD labeling on MSC proliferation and differentiation and use as a cell label in a cardiomyocyte co-culture. Results A dose-response to QDs in rat bone marrow MSCs was assessed in Control (no-QDs, Low concentration (LC, 5 nmol/L and High concentration (HC, 20 nmol/L groups. QD yield and retention, MSC survival, proinflammatory cytokines, proliferation and DNA damage were evaluated in MSCs, 24 -120 hrs post QD labeling. In addition, functional integration of QD labeled MSCs in an in vitro cardiomyocyte co-culture was assessed. A dose-dependent effect was measured with increased yield in HC vs. LC labeled MSCs (93 ± 3% vs. 50% ± 15%, p 90% of QD labeled cells were viable in all groups, however, at 120 hrs increased apoptosis was measured in HC vs. Control MSCs (7.2% ± 2.7% vs. 0.5% ± 0.4%, p Conclusion Fluorescent QDs label MSC effectively in an in vitro co-culture model. QDs are easy to use, show a high yield and survival rate with minimal cytotoxic effects. Dose-dependent effects suggest limiting MSC QD exposure.
Biosensing with Luminescent Semiconductor Quantum Dots
Directory of Open Access Journals (Sweden)
Hedi Mattoussi
2006-08-01
Full Text Available Luminescent semiconductor nanocrystals or quantum dots (QDs are a recentlydeveloped class of nanomaterial whose unique photophysical properties are helping tocreate a new generation of robust fluorescent biosensors. QD properties of interest forbiosensing include high quantum yields, broad absorption spectra coupled to narrow sizetunablephotoluminescent emissions and exceptional resistance to both photobleaching andchemical degradation. In this review, we examine the progress in adapting QDs for severalpredominantly in vitro biosensing applications including use in immunoassays, asgeneralized probes, in nucleic acid detection and fluorescence resonance energy transfer(FRET - based sensing. We also describe several important considerations when workingwith QDs mainly centered on the choice of material(s and appropriate strategies forattaching biomolecules to the QDs.
Semiconductor Quantum Dots for Biomedicial Applications
Shao, Lijia; Gao, Yanfang; Yan, Feng
2011-01-01
Semiconductor quantum dots (QDs) are nanometre-scale crystals, which have unique photophysical properties, such as size-dependent optical properties, high fluorescence quantum yields, and excellent stability against photobleaching. These properties enable QDs as the promising optical labels for the biological applications, such as multiplexed analysis of immunocomplexes or DNA hybridization processes, cell sorting and tracing, in vivo imaging and diagnostics in biomedicine. Meanwhile, QDs can be used as labels for the electrochemical detection of DNA or proteins. This article reviews the synthesis and toxicity of QDs and their optical and electrochemical bioanalytical applications. Especially the application of QDs in biomedicine such as delivering, cell targeting and imaging for cancer research, and in vivo photodynamic therapy (PDT) of cancer are briefly discussed. PMID:22247690
Semiconductor quantum dot-sensitized solar cells.
Tian, Jianjun; Cao, Guozhong
2013-10-31
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.
Semiconductor quantum dot-sensitized solar cells
Directory of Open Access Journals (Sweden)
Jianjun Tian
2013-10-01
Full Text Available Semiconductor quantum dots (QDs have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1 the effect of quantum confinement on QDSCs, 2 the multiple exciton generation (MEG of QDs, 3 fabrication methods of QDs, and 4 nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.
Silicon quantum dots for biological applications.
Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka
2014-01-01
Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed.
Coherent spin dynamics in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Amand, T.; Senes, M.; Marie, X.; Renucci, P. [Laboratoire de Nanophysique, Magnetisme et Optoelectronique-LPMC, INSA, 135 avenue de Rangueil, 31077 Toulouse cedex 4 (France); Urbaszek, B. [Laboratoire de Nanophysique, Magnetisme et Optoelectronique-LPMC, INSA, 135 avenue de Rangueil, 31077 Toulouse cedex 4 (France); Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Krebs, O.; Laurent, S.; Voisin, P. [Laboratoire de Photonique et Nanostructures, route de Nozay, 91460 Marcoussis (France); Warburton, R.J. [Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)
2005-05-01
The anisotropic exchange interaction (AEI) between electrons and holes is shown to play a central role in quantum dots (QDs) spin dynamics. In neutral QDs, AEI is at the origin of spin quantum beats observed under resonant excitation between the lowest energy doublet of linearly dipole-active eigenstates. In negatively charged QDs, AEI is at the origin of QD emission with opposite helicity to the optic al excitation, under non-resonant excitation conditions. Finally, the possibility of leaving a spin information in the system after recombination of the photo-injected electron-hole pair is discussed with respect to the type and the level of the doping. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Interference and interactions in open quantum dots
Bird, J P; Ferry, D K; Moura, A P S; Lai, Y C; Indlekofer, K M
2003-01-01
In this report, we review the results of our joint experimental and theoretical studies of electron-interference, and interaction, phenomena in open electron cavities known as quantum dots. The transport through these structures is shown to be heavily influenced by the remnants of their discrete density of states, elements of which remain resolved in spite of the strong coupling that exists between the cavity and its reservoirs. The experimental signatures of this density of states are discussed at length in this report, and are shown to be related to characteristic wavefunction scarring, involving a small number of classical orbits. A semiclassical analysis of this behaviour shows it to be related to the effect of dynamical tunnelling, in which electrons are injected into the dot tunnel through classically forbidden regions of phase space, to access isolated regular orbits. The dynamical tunnelling gives rise to the formation of long-lived quasi-bound states in the open dots, and the many-body implications a...
Plasmonic Effect on Exciton and Multiexciton Emission of Single Quantum Dots.
Dey, Swayandipta; Zhao, Jing
2016-08-04
Quantum dots are nanoscale quantum emitters with high quantum yield and size-dependent emission wavelength, holding promises in many optical and electronic applications. When quantum dots are situated close to noble metal nanoparticles, their emitting behavior can be conveniently tuned because of the interaction between the excitons of the quantum dots and the plasmons of the metal nanoparticles. This interaction at the single quantum dot level gives rise to reduced or suppressed photoluminescence blinking and enhanced multiexciton emission, which is difficult to achieve in isolated quantum dots. However, the mechanism of how plasmonic structures cause the changes in the quantum dot emission remains unclear. Because of the complexity of the system, the interfaces between metal, semiconductor, and ligands must be considered, in addition to factors such as geometry, interparticle distance, and spectral overlap. The challenges in the design and fabrication of the hybrid nanostructures as well as in understanding the exciton-plasmon coupling mechanism can be overcome by a cooperative effort in synthesis, optical spectroscopy, and theoretical modeling.
Quantum Interference Induced Photon Blockade in a Coupled Single Quantum Dot-Cavity System
Tang, Jing; Xu, Xiulai
2015-01-01
We propose an experimental scheme to implement a strong photon blockade with a single quantum dot coupled to a nanocavity. The photon blockade effect can be tremendously enhanced by driving the cavity and the quantum dot simultaneously with two classical laser fields. This enhancement of photon blockade is ascribed to the quantum interference effect to avoid two-photon excitation of the cavity field. Comparing with Jaynes-Cummings model, the second-order correlation function at zero time delay $g^{(2)}(0)$ in our scheme can be reduced by two orders of magnitude and the system sustains a large intracavity photon number. A red (blue) cavity-light detuning asymmetry for photon quantum statistics with bunching or antibunching characteristics is also observed. The photon blockade effect has a controllable flexibility by tuning the relative phase between the two pumping laser fields and the Rabi coupling strength between the quantum dot and the pumping field. Moreover, the photon blockade scheme based on quantum in...
Charge transport in semiconductor nanocrystal quantum dots
Mentzel, Tamar Shoshana
In this thesis, we study charge transport in arrays of semiconductor nanocrystal quantum dots. Nanocrystals are synthesized in solution, and an organic ligand on the surface of the nanocrystal creates a potential barrier that confines charges in the nanocrystal. Optical absorption measurements reveal discrete electronic energy levels in the nanocrystals resulting from quantum confinement. When nanocrystals are deposited on a surface, they self-assemble into a close-packed array forming a nanocrystal solid. We report electrical transport measurements of a PbSe nanocrystal solid that serves as the channel of an inverted field-effect transistor. We measure the conductance as a function of temperature, source-drain bias and. gate voltage. The data indicates that holes are the majority carriers; the Fermi energy lies in impurity states in the bandgap of the nanocrystal; and charges hop between the highest occupied valence state in the nanocrystals (the 1S h states). At low source-drain voltages, the activation energy for hopping is given by the energy required to generate holes in the 1Sh state plus activation over barriers resulting from site disorder. The barriers from site disorder are eliminated with a sufficiently high source-drain bias. From the gate effect, we extract the Thomas-Fermi screening length and a density of states that is consistent with the estimated value. We consider variable-range hopping as an alternative model, and find no self-consistent evidence for it. Next, we employ charge sensing as an alternative to current measurements for studying transport in materials with localized sites. A narrow-channel MOSFET serves as a charge sensor because its conductance is sensitive to potential fluctuations in the nearby environment caused by the motion of charge. In particular, it is sensitive to the fluctuation of single electrons at the silicon-oxide interface within the MOSFET. We pattern a strip of amorphous germanium within 100 nm of the transistor. The
Semiconductor quantum dot scintillation under gamma-ray irradiation
Energy Technology Data Exchange (ETDEWEB)
Letant, S E; Wang, T
2006-08-23
We recently demonstrated the ability of semiconductor quantum dots to convert alpha radiation into visible photons. In this letter, we report on the scintillation of quantum dots under gamma-ray irradiation, and compare the energy resolution of the 59 keV line of Americium 241 obtained with our quantum dot-glass nanocomposite material to that of a standard sodium iodide scintillator. A factor 2 improvement is demonstrated experimentally and interpreted theoretically using a combination of energy-loss and photon transport models. These results demonstrate the potential of quantum dots for room-temperature gamma-ray detection, which has applications in medical imaging, environmental monitoring, as well as security and defense. Present technology in gamma radiation detection suffers from flexibility and scalability issues. For example, bulk Germanium provides fine energy resolution (0.2% energy resolution at 1.33 MeV) but requires operation at liquid nitrogen temperature. On the other hand, Cadmium-Zinc-Telluride is a good room temperature detector ( 1% at 662 keV) but the size of the crystals that can be grown is limited to a few centimeters in each direction. Finally, the most commonly used scintillator, Sodium Iodide (NaI), can be grown as large crystals but suffers from a lack of energy resolution (7% energy resolution at 662 keV). Recent advancements in nanotechnology6-10 have provided the possibility of controlling materials synthesis at the molecular level. Both morphology and chemical composition can now be manipulated, leading to radically new material properties due to a combination of quantum confinement and surface to volume ratio effects. One of the main consequences of reducing the size of semiconductors down to nanometer dimensions is to increase the energy band gap, leading to visible luminescence, which suggests that these materials could be used as scintillators. The visible band gap of quantum dots would also ensure both efficient photon counting
Using quantum dot photoluminescence for load detection
Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.
2016-08-01
We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.
Colloidal quantum dot light-emitting devices
Directory of Open Access Journals (Sweden)
Vanessa Wood
2010-07-01
Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.
Study of metallothionein-quantum dots interactions.
Tmejova, Katerina; Hynek, David; Kopel, Pavel; Krizkova, Sona; Blazkova, Iva; Trnkova, Libuse; Adam, Vojtech; Kizek, Rene
2014-05-01
Nanoparticles have gained increasing interest in medical and in vivo applications. Metallothionein (MT) is well known as a maintainer of metal ions balance in intracellular space. This is due to high affinity of this protein to any reactive species including metals and reactive oxygen species. The purpose of this study was to determine the metallothionein-quantum dots interactions that were investigated by spectral and electrochemical techniques. CuS, CdS, PbS, and CdTe quantum dots (QDs) were analysed. The highest intensity was shown for CdTe, than for CdS measured by fluorescence. These results were supported by statistical analysis and considered as significant. Further, these interactions were analysed using gel electrophoresis, where MT aggregates forming after interactions with QDs were detected. Using differential pulse voltammetry Brdicka reaction, QDs and MT were studied. This method allowed us to confirm spectral results and, moreover, to observe the changes in MT structure causing new voltammetric peaks called X and Y, which enhanced with the prolonged time of interaction up to 6 h.
Quantum dot imaging for embryonic stem cells
Directory of Open Access Journals (Sweden)
Gambhir Sanjiv S
2007-10-01
Full Text Available Abstract Background Semiconductor quantum dots (QDs hold increasing potential for cellular imaging both in vitro and in vivo. In this report, we aimed to evaluate in vivo multiplex imaging of mouse embryonic stem (ES cells labeled with Qtracker delivered quantum dots (QDs. Results Murine embryonic stem (ES cells were labeled with six different QDs using Qtracker. ES cell viability, proliferation, and differentiation were not adversely affected by QDs compared with non-labeled control cells (P = NS. Afterward, labeled ES cells were injected subcutaneously onto the backs of athymic nude mice. These labeled ES cells could be imaged with good contrast with one single excitation wavelength. With the same excitation wavelength, the signal intensity, defined as (total signal-background/exposure time in millisecond was 11 ± 2 for cells labeled with QD 525, 12 ± 9 for QD 565, 176 ± 81 for QD 605, 176 ± 136 for QD 655, 167 ± 104 for QD 705, and 1,713 ± 482 for QD 800. Finally, we have shown that QD 800 offers greater fluorescent intensity than the other QDs tested. Conclusion In summary, this is the first demonstration of in vivo multiplex imaging of mouse ES cells labeled QDs. Upon further improvements, QDs will have a greater potential for tracking stem cells within deep tissues. These results provide a promising tool for imaging stem cell therapy non-invasively in vivo.
Using quantum dot photoluminescence for load detection
Energy Technology Data Exchange (ETDEWEB)
Moebius, M., E-mail: martin.moebius@zfm.tu-chemnitz.de; Hartwig, M. [Technische Universität Chemnitz, Reichenhainer Straße, 09126 Chemnitz (Germany); Martin, J. [Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz (Germany); Baumann, R. R.; Otto, T.; Gessner, T. [Technische Universität Chemnitz, Reichenhainer Straße, 09126 Chemnitz (Germany); Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz (Germany)
2016-08-15
We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.
Using quantum dot photoluminescence for load detection
Directory of Open Access Journals (Sweden)
M. Moebius
2016-08-01
Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.
Polymersomes containing quantum dots for cellular imaging
Directory of Open Access Journals (Sweden)
Camblin M
2014-05-01
Full Text Available Marine Camblin,1 Pascal Detampel,1 Helene Kettiger,1 Dalin Wu,2 Vimalkumar Balasubramanian,1,* Jörg Huwyler1,*1Division of Pharmaceutical Technology, 2Department of Chemistry, University of Basel, Basel, Switzerland*These authors contributed equally to this workAbstract: Quantum dots (QDs are highly fluorescent and stable probes for cellular and molecular imaging. However, poor intracellular delivery, stability, and toxicity of QDs in biological compartments hamper their use in cellular imaging. To overcome these limitations, we developed a simple and effective method to load QDs into polymersomes (Ps made of poly(dimethylsiloxane-poly(2-methyloxazoline (PDMS-PMOXA diblock copolymers without compromising the characteristics of the QDs. These Ps showed no cellular toxicity and QDs were successfully incorporated into the aqueous compartment of the Ps as confirmed by transmission electron microscopy, fluorescence spectroscopy, and fluorescence correlation spectroscopy. Ps containing QDs showed colloidal stability over a period of 6 weeks if stored in phosphate-buffered saline (PBS at physiological pH (7.4. Efficient intracellular delivery of Ps containing QDs was achieved in human liver carcinoma cells (HepG2 and was visualized by confocal laser scanning microscopy (CLSM. Ps containing QDs showed a time- and concentration-dependent uptake in HepG2 cells and exhibited better intracellular stability than liposomes. Our results suggest that Ps containing QDs can be used as nanoprobes for cellular imaging.Keywords: quantum dots, polymersomes, cellular imaging, cellular uptake
Using a quantum dot system to realize perfect state transfer
Institute of Scientific and Technical Information of China (English)
Li Ji; Wu Shi-Hai; Zhang Wen-Wen; Xi Xiao-Qiang
2011-01-01
There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M,Petrosyan D and Lambropoulos P 2004 Europhys.Lett.65 297] where a quantum dot system is used to realize quantum communication.To overcome these disadvantages,we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST).First,we calculate the interaction relation for PQST in the spin chain.Second,we review the interaction between the quantum dots in the Heitler-London approach.Third,we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST.
Open quantum dots in graphene: Scaling relativistic pointer states
Ferry, D. K.; Huang, L.; Yang, R.; Lai, Y.-C.; Akis, R.
2010-04-01
Open quantum dots provide a window into the connection between quantum and classical physics, particularly through the decoherence theory, in which an important set of quantum states are not "washed out" through interaction with the environment-the pointer states provide connection to trapped classical orbits which remain stable in the dots. Graphene is a recently discovered material with highly unusual properties. This single layer, one atom thick, sheet of carbon has a unique bandstructure, governed by the Dirac equation, in which charge carriers imitate relativistic particles with zero rest mass. Here, an atomic orbital-based recursive Green's function method is used for studying the quantum transport. We study quantum fluctuations in graphene and bilayer graphene quantum dots with this recursive Green's function method. Finally, we examine the scaling of the domiant fluctuation frequency with dot size.
Charge-extraction strategies for colloidal quantum dot photovoltaics
Lan, Xinzheng
2014-02-20
The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.
Spin-orbit effects in carbon-nanotube double quantum dots
DEFF Research Database (Denmark)
Weiss, S; Rashba, E I; Kuemmeth, Ferdinand;
2010-01-01
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the spectrum exhibits a much richer structure because of the spin...... between the dots. For the two-electron regime, the detailed structure of the spin-orbit split energy spectrum is investigated as a function of detuning between the quantum dots in a 22-dimensional Hilbert space within the framework of a single-longitudinal-mode model. We find a competing effect......-orbit interaction that couples the electron's isospin to its real spin through two independent coupling constants. In a single dot, both constants combine to split the spectrum into two Kramers doublets while the antisymmetric constant solely controls the difference in the tunneling rates of the Kramers doublets...
Quantum Electrodynamics of Quantum Dot-Metal Nanoparticles Molecules
Ridolfo, A; Fina, N; Saija, R; Savasta, S
2010-01-01
We study theoretically the quantum optical properties of hybrid molecules composed of an individual quantum dot and a metallic nanoparticle. We calculate the resonance fluorescence of this hybrid system. Its incoherent part, the one arising from nonlinear quantum processes, results to be enhanced by more than two orders of magnitude as compared to that in the absence of the metallic nanoparticle. Scattering spectra at different excitation powers and nonperturbative calculations of intensity-field correlation functions show that this system can act as a nonlinear ultra-compact two-photon switch for incident photons, where the presence (or absence) of a single incident photon field is sufficient to allow (or prevent) the scattering of subsequent photons. We also find that a small frequency shift of the incident light field may cause changes in the intensity field correlation function of orders of magnitude.
Single-photon superradiance from a quantum dot
DEFF Research Database (Denmark)
Tighineanu, Petru; Daveau, Raphaël Sura; Lehmann, Tau Bernstorff
2016-01-01
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron...... temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies....
Pulse train amplification and regeneration based on semiconductor quantum dots waveguide
DEFF Research Database (Denmark)
Chen, Yaohui; Öhman, Filip; Mørk, Jesper
2008-01-01
We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....
DEFF Research Database (Denmark)
Chen, Yaohui; Mørk, Jesper
2010-01-01
We show that ultrafast carrier dynamics plays an important role on slow and fast light effects based on coherent population oscillations in quantum dot semiconductor waveguides. Fast light in the gain regime and slow light in the absorption regime are found to be enhanced at frequencies beyond th...... the usual limits of the carrier lifetime. The effects are investigated by a comprehensive model and shown to originate from non-equilibrium dynamics within the quantum dot carrier populations....
Energy Technology Data Exchange (ETDEWEB)
Rose, Peter [Univ. of Utah, Salt Lake City, UT (United States); Bartl, Michael [Univ. of Utah, Salt Lake City, UT (United States); Reimus, Paul [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Williams, Mark [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Mella, Mike [Univ. of Utah, Salt Lake City, UT (United States)
2015-09-12
The objective of this project was to develop and demonstrate a new class of tracers that offer great promise for use in characterizing fracture networks in EGS reservoirs. From laboratory synthesis and testing through numerical modeling and field demonstrations, we have demonstrated the amazing versatility and applicability of quantum dot tracers. This report summarizes the results of four years of research into the design, synthesis, and characterization of semiconductor nanocrystals (quantum dots) for use as geothermal tracers.
RKKY interaction in a chirally coupled double quantum dot system
Energy Technology Data Exchange (ETDEWEB)
Heine, A. W.; Tutuc, D.; Haug, R. J. [Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2, 30167 Hannover (Germany); Zwicknagl, G. [Institut für Mathematische Physik, TU Braunschweig, Mendelssohnstr. 3, 38106 Braunschweig (Germany); Schuh, D. [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätstr. 31, 93053 Regensburg (Germany); Wegscheider, W. [Laboratorium für Festkörperphysik, ETH Zürich, Schafmattstr. 16, 8093 Zürich, Switzerland and Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätstr. 31, 93053 Regens (Germany)
2013-12-04
The competition between the Kondo effect and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction is investigated in a double quantum dots system, coupled via a central open conducting region. A perpendicular magnetic field induces the formation of Landau Levels which in turn give rise to the so-called Kondo chessboard pattern in the transport through the quantum dots. The two quantum dots become therefore chirally coupled via the edge channels formed in the open conducting area. In regions where both quantum dots exhibit Kondo transport the presence of the RKKY exchange interaction is probed by an analysis of the temperature dependence. The thus obtained Kondo temperature of one dot shows an abrupt increase at the onset of Kondo transport in the other, independent of the magnetic field polarity, i.e. edge state chirality in the central region.
Pandey, Sumeet C.
The enhanced functionality and tunability of electronic nanomaterials enables the development of next-generation photovoltaic, optoelectronic, and electronic devices, as well as biomolecular tags. Design and efficient synthesis of such semiconductor nanomaterials require a fundamental understanding of the underlying process-structure/composition-property-function relationships. To this end, this thesis focuses on a systematic, comprehensive analysis of the physical and chemical phenomena that determine the composition and properties of semiconductor nanomaterials. Through synergistic combination of computational modeling and experimental studies, the thesis addresses the thermodynamics and kinetics that are relevant during synthesis and processing and their resulting impact on the properties of silicon thin films and ternary quantum dots (TQDs) of compound semiconductors. The thesis presents a computational study of the growth mechanisms of plasma deposited a-Si:H thin films based on kinetic Monte Carlo (KMC) simulations according to a transition probability database constructed by first-principles density functional theory (DFT) calculations. Based on the results, a comprehensive model is proposed for a-Si:H thin-film growth by plasma deposition under conditions that make the silyl (SiH3) radical the dominant deposition precursor. It is found that the relative roles of surface coordination defects are crucial in determining the surface composition of plasma deposited a-Si:H films and should be properly accounted for. The KMC predictions for the temperature dependence (over the range from 300 K to 700 K) of the surface concentration of SiHx(s) (x = 1,2,3) surface hydride species, the surface hydrogen content, and the surface dangling-bond coverage are in agreement with experimental measurements. In addition, the thesis details a systematic analysis of equilibrium compositional distribution in TQDs and their effects on the electronic and optoelectronic properties
Mutygullina, A. A.; Khamadeev, M. A.; Blum, D. O.; Shirdelhavar, A. H.
2017-06-01
Influence of quantum fluctuations in a system consisting of a quantum dot and the reservoir of acoustic phonons on processes in which the quantum dot takes part is investigated. Under some conditions this influence is shown to be very strong. We find a contribution from the quantum fluctuations to the self-energy function of the exciton coupled to the quantum dot.
Kosolapova, K.; Al-Alwani, A.; Gorbachev, I.; Glukhovskoy, E.
2015-11-01
Recently, a new simple method for the purification of CdSe-CdS-ZnS quantum dots by using membrane filtration, the filtration process, successfully separated the oleic acid from quantum dots through membranes purification after synthesis; purification of quantum dots is a very significant part of post synthetical treatment that determines the properties of the material. We explore the possibilities of the Langmuir-Blodgett technique to make such layers, using quantum dots as a model system. The Langmuir monolayer of quantum dots were then investigated the surface pressure-area isotherm. From isotherm, we found the surface pressure monolayer changed with time.
Spins of Andreev states in double quantum dots
Su, Zhaoen; Chen, Jun; Yu, Peng; Hocervar, Moira; Plissard, Sebastien; Car, Diana; Tacla, Alexandre; Daley, Andrew; Pekker, David; Bakkers, Erik; Frolov, Sergey
Andreev (or Shiba) states in coupled double quantum dots is an open field. Here we demonstrate the realization of Andreev states in double quantum dots in an InSb nanowire coupled to two NbTiN superconductors. The magnetic field dependence of the Andreev states has been explored to resolve the spins in different double dot configurations. The experiment helps to understand the interplay between pair correlation, exchange energy and charging energy with a well-controlled system. It also opens the possibility to implement Majorana modes in Kitaev chains made of such dots.
Analytic Characterization of the Dynamic Regimes of Quantum-Dot Lasers
Directory of Open Access Journals (Sweden)
Benjamin Lingnau
2015-04-01
Full Text Available We present analytic treatment of the three different dynamic regimes found in quantum-dot laser turn-on and modulation dynamics. A dynamic coupling, and thus density-dependent scattering lifetimes between dots and reservoir, are identified to be crucial for a realistic modeling. We derive a minimal model for the quantum-dot laser dynamics that can be seeded with experimentally accessible parameters, and give explicit analytic equations that are able to predict relaxation-oscillation frequency and damping rate.
Quantum dot density studies for quantum dot intermediate band solar cells
Energy Technology Data Exchange (ETDEWEB)
Thomassen, Sedsel Fretheim; Zhou, Dayong; Vitelli, Stefano; Mayani, Maryam Gholami; Fimland, Bjoern-Ove; Reenaas, Turid Worren
2010-07-01
Quantum dots (QDs) have been an active area of research for many years and have been implemented in several applications, such as lasers and detectors. During the last years, some attempts have been made to increase the absorption and efficiency of solar cells by inserting QDs into the intrinsic region of pin solar cells. So far, these attempts have been successful in increasing the absorption, but not the cell efficiency. There are probably several reasons for this lack of efficiency increase, but we believe that one important reason is the low density of the implemented QDs. In this work, samples of single layer InAs QDs on n-GaAs(001) substrates have been grown by molecular beam epitaxy (MBE) and we have performed a systematic study of how deposition parameters affect the QD density. The aim is to achieve densities > 1011 cm-2. The nominal substrate temperature (360 - 500 deg. C), the InAs growth rate (0.085 - 1 ML/s) and thickness (2.0 - 2.8 ML) have been varied in a systematic way for two different deposition methods of InAs, i.e. continuous deposition or deposition with interruptions. In addition, we have for the continuous growth samples also varied the As-flux (0.5 - 6 centre dot10-6 torr). Scanning electron microscopy (SEM) has been the main characterization method to determine quantum dot sizes and densities, and atomic force microscopy (AFM) has been used for evaluation of the quantum dot heights. We find that the QD density increases with reduced growth temperature and that it is higher for samples grown continuously than for samples grown with growth interruptions. The homogeneity is also strongly affected by temperature, InAs deposition method and the As-flux. We have observed QD densities as high as 2.5 centre dot1011 cm-2 for the samples grown at the lowest growth temperatures. (Author)
Kano, Shinya; Fujii, Minoru
2017-03-01
We study the conversion efficiency of an energy harvester based on resonant tunneling through quantum dots with heat leakage. Heat leakage current from a hot electrode to a cold electrode is taken into account in the analysis of the harvester operation. Modeling of electrical output indicates that a maximum heat leakage current is not negligible because it is larger than that of the heat current harvested into electrical power. A reduction of heat leakage is required in this energy harvester in order to obtain efficient heat-to-electrical conversion. Multiple energy levels of a quantum dot can increase the output power of the harvester. Heavily doped colloidal semiconductor quantum dots are a possible candidate for a quantum-dot monolayer in the energy harvester to reduce heat leakage, scaling down device size, and increasing electrical output via multiple discrete energy levels.
Orbital Topology Controlling Charge Injection in Quantum-Dot-Sensitized Solar Cells.
Hansen, Thorsten; Žídek, Karel; Zheng, Kaibo; Abdellah, Mohamed; Chábera, Pavel; Persson, Petter; Pullerits, Tõnu
2014-04-03
Quantum-dot-sensitized solar cells are emerging as a promising development of dye-sensitized solar cells, where photostable semiconductor quantum dots replace molecular dyes. Upon photoexcitation of a quantum dot, an electron is transferred to a high-band-gap metal oxide. Swift electron transfer is crucial to ensure a high overall efficiency of the solar cell. Using femtosecond time-resolved spectroscopy, we find the rate of electron transfer to be surprisingly sensitive to the chemical structure of the linker molecules that attach the quantum dots to the metal oxide. A rectangular barrier model is unable to capture the observed variation. Applying bridge-mediated electron-transfer theory, we find that the electron-transfer rates depend on the topology of the frontier orbital of the molecular linker. This promises the capability of fine tuning the electron-transfer rates by rational design of the linker molecules.
Resonant electronic excitation energy transfer by Dexter mechanism in the quantum dot system
Samosvat, D. M.; Chikalova-Luzina, O. P.; Vyatkin, V. M.; Zegrya, G. G.
2016-11-01
In present work the energy transfer between quantum dots by the exchange (Dexter) mechanism is analysed. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same compound A3B5 and embedded in the matrix of other material creating potential barriers for electron and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found using the Kane model that provides the most adequate description spectra of semiconductors A3B5. Numerical calculations show that the rate of the energy transfer by Dexter mechanism is comparable to the rate of the energy transfer by electrostatic mechanism at the distances approaching to the contact ones.
A comparison between semi-spheroid- and dome-shaped quantum dots coupled to wetting layer
Directory of Open Access Journals (Sweden)
Mohammadreza Shahzadeh
2014-06-01
Full Text Available During the epitaxial growth method, self-assembled semi-spheroid-shaped quantum dots (QDs are formed on the wetting layer (WL. However for sake of simplicity, researchers sometimes assume semi-spheroid-shaped QDs to be dome-shaped (hemisphere. In this work, a detailed and comprehensive study on the difference between electronic and transition properties of dome- and semi-spheroid-shaped quantum dots is presented. We will explain why the P-to-S intersubband transition behaves the way it does. The calculated results for intersubband P-to-S transition properties of quantum dots show two different trends for dome-shaped and semi-spheroid-shaped quantum dots. The results are interpreted using the probability of finding electron inside the dome/spheroid region, with emphasis on the effects of wetting layer. It is shown that dome-shaped and semi-spheroid-shaped quantum dots feature different electronic and transition properties, arising from the difference in lateral dimensions between dome- and semi-spheroid-shaped QDs. Moreover, an analogy is presented between the bound S-states in the quantum dots and a simple 3D quantum mechanical particle in a box, and effective sizes are calculated. The results of this work will benefit researchers to present more realistic models of coupled QD/WL systems and explain their properties more precisely.
Bose, Ranojoy
In this thesis, we study solution-processed lead sulfide quantum dots for near-infrared quantum information and communication applications. Quantum dots processed through synthetic routes and colloidally suspended in solution offer far-reaching device application possibilities that are unparalelled in traditional self-assembled quantum dots. Lead sulfide quantum dots are especially promising for near-infrared quantum optics due to their optical emission at the wavelengths of fiber-optic communications (1.3--1.5 microm). The broad absorption spectrum of these quantum dots can be used for solar light-harvesting applications, to which end the results of Chapter 2---where we study Forster resonance energy transfer in quantum dot solids---provide remarkable insights into photon emission from quantum-dot based solar cells. In subsequent chapters, we explore quantum-dot photonic crystal applications, where exciton-photon interactions in the cavity environment remarkably allow for the emission of indistinguishable single photons that are important for distribution of high-security quantum keys---being highly sensitive to 'eavesdropping'. Particularly, the suggestion of the solution-processed QED system is novel compared to traditional self-assembled systems, and as we will discuss, offer integration and processing capabilities that are unprecedented, and perform well at wavelength ranges where standard QED systems scale poorly. The results of chapters 3--6 are therefore significant in the general field of cavity quantum electrodynamics.
Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots
DEFF Research Database (Denmark)
Albert, F.; Schneider, C.; Stobbe, Søren
2010-01-01
We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD.......1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs....
Quantum phase transition of light as a control of the entanglement between interacting quantum dots
Barragan, Angela; Vera-Ciro, Carlos; Mondragon-Shem, Ian
We study coupled quantum dots arranged in a photonic crystal, interacting with light which undergoes a quantum phase transition. At the mean-field level for the infinite lattice, we compute the concurrence of the quantum dots as a measure of their entanglement. We find that this quantity smoothly
Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots
DEFF Research Database (Denmark)
Albert, F.; Schneider, C.; Stobbe, Søren;
2010-01-01
We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...
Optical properties of geometrically optimized graphene quantum dots
Bugajny, Paweł; Szulakowska, Ludmiła; Jaworowski, Błazej; Potasz, Paweł
2017-01-01
We derive effective tight-binding model for geometrically optimized graphene quantum dots and based on it we investigate corresponding changes in their optical properties in comparison to ideal structures. We consider hexagonal and triangular dots with zigzag and armchair edges. Using density functional theory methods we show that displacement of lattice sites leads to changes in atomic distances and in consequence modifies their energy spectrum. We derive appropriate model within tight-binding method with edge-modified hopping integrals. Using group theoretical analysis, we determine allowed optical transitions and investigate oscillatory strength between bulk-bulk, bulk-edge and edge-edge transitions. We compare optical joint density of states for ideal and geometry optimized structures. We also investigate an enhanced effect of sites displacement which can be designed in artificial graphene-like nanostructures. A shift of absorption peaks is found for small structures, vanishing with increasing system size.
Phonon-assisted decoherence and tunneling in quantum dot molecules
DEFF Research Database (Denmark)
Grodecka-Grad, Anna; Foerstner, Jens
2011-01-01
We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantum kinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal electron-phonon couplings representing real and virtual...... processes with relevant acoustic phonons. We show that the relaxation is dominated by phonon-assisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between...... the quantum dots is studied in detail. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)...
A Novel Particle Detector: Quantum Dot Doped Liquid Scintillator
Winslow, Lindley; Conrad, Janet; Jerry, Ruel
2010-02-01
Quantum dots are semiconducting nanocrystals. When excited by light shorter then their characteristic wavelength, they re-emit in a narrow band around this wavelength. The size of the quantum is proportional to the characteristic wavelength so they can be tuned for many applications. CdS quantum dots are made in wavelengths from 360nm to 460nm, a perfect range for the sensitivity of photo-multiplier tubes. The synthesis of quantum dots automatically leaves them in toluene, a good organic scintillator and Cd is a particularly interesting material as it has one of the highest thermal neutron cross sections and has several neutrinoless double beta decay and double electron capture isotopes. The performance of quantum dot loaded scintillator compared to standard scintillators is measured and some unique properties presented. )
A triple quantum dot based nano-electromechanical memory device
Energy Technology Data Exchange (ETDEWEB)
Pozner, R.; Lifshitz, E. [Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Peskin, U., E-mail: uri@tx.technion.ac.il [Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Lise Meitner Center for Computational Quantum Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
2015-09-14
Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.
Photolithographic process for the patterning of quantum dots
Energy Technology Data Exchange (ETDEWEB)
Na, Young Joo; Park, Sang Joon; Lee, Sang Wha [Department of Chemical and Bioengineering, Kyungwon University, Seongnam-si, Gyeonggi-Do 461-701 (Korea, Republic of); Kim, Jong Sung [Department of Chemical and Bioengineering, Kyungwon University, Seongnam-si, Gyeonggi-Do 461-701 (Korea, Republic of)], E-mail: jskim@kyungwon.ac.kr
2008-09-15
Recently, quantum dots have been used as molecular probes substituting for conventional organic fluorophores. Quantum dots are stable against photobleaching and have more controllable emission bands, broader absorption spectra, and higher quantum yields. In this study, an array of ZnS-coated CdSe quantum dots on a slide glass has been prepared by photolithographic method. The array pattern was prepared using a positive photoresist (AZ1518) and developer (AZ351). The patterned glass was silanized with 3-aminopropyltriethoxysilane (APTES), and carboxyl-coated quantum dots were selectively attached onto the array pattern. The silanization was examined by measuring contact angle and the surface of the array pattern was analyzed using AFM and fluorescent microscope.
DEFF Research Database (Denmark)
Markussen, Troels; Kristensen, Philip Trøst; Tromborg, Bjarne
2006-01-01
Models of carrier dynamics in quantum dots rely strongly on adequate descriptions of the carrier wave functions. In this work we numerically solve the one-band effective mass Schrodinger equation to calculate the capture times of phonon-mediated carrier capture into self-assembled quantum dots...
Fan, X; Palinginis, P; Lacey, S; Wang, H; Lonergan, M C
2000-11-01
We demonstrate a quantum-dot microcavity by coupling core-shell semiconductor nanocrystals to a fused-silica microsphere. We show that the composite microcavity can feature Q factors of the order of 10(8), providing a model system for investigating cavity QED and microlasers at the level of single quantum dots.
Linewidth broadening of a quantum dot coupled to an off-resonant cavity
Majumdar, Arka; Kim, Erik; Englund, Dirk; Kim, Hyochul; Petroff, Pierre; Vuckovic, Jelena
2010-01-01
We study the coupling between a photonic crystal cavity and an off-resonant quantum dot under resonant excitation of the cavity or the quantum dot. Linewidths of the quantum dot and the cavity as a function of the excitation laser power are measured. We show that the linewidth of the quantum dot, measured by observing the cavity emission, is significantly broadened compared to the theoretical estimate. This indicates additional incoherent coupling between the quantum dot and the cavity.
Photoluminescence studies of single InGaAs quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher
1999-01-01
Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... is obtained by exciting and detecting the photoluminescence through a microscope objective which is located inside the cryostat. Furthermore, e-beam lithography and mesa etching have been used to reduce the size of the detection area to a few hundred nanometers in diameter. These techniques allow us...
Second Bound State of Biexcitons in Quantum Dots
Institute of Scientific and Technical Information of China (English)
XIE Wen-Eang
2003-01-01
The second bound state of the biexcitons in a quantum dot, with orbital angular momentum L = 1, is reported. By using the method of few-body physics, the binding energy spectra of the second bound state of a biexciton in a GaAs quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio and the quantum dot size. The fact that the biexcitons have a second bound state may aid in the better understanding of their binding mechanism.
Kondo effect in quantum dots and molecular devices
Institute of Scientific and Technical Information of China (English)
JIANG Lang; LI Hongxiang; HU Wenping; ZHU Daoben
2005-01-01
Kondo effect is a very important many-body phenomenon in condensed matter physics,which explains why the resistance increases as the temperature is lowered (usually <10 K) in dilute magnetic alloy, and why the conductance increases as temperature is decreased in quantum dots. This paper simply introduces equilibrium and non- equilibrium Kondo effects in quantum dots together with the Kondo effect in quantum dots with even number of electrons (when the singlet and triplet states are degenerate). Furthermore, Kondo effect in single atom/molecular transistors is introduced, which indicates a new way to study Kondo effect.
Thermal Rectification Effect of an Interacting Quantum Dot
Institute of Scientific and Technical Information of China (English)
CHEN Xue-Ou; DONG Bing; LEI Xiao-Lin
2008-01-01
@@ We investigate the nonlinear thermal transport properties of a single interacting quantum dot with two energy levels tunnel-coupled to two electrodes using nonequilibrium Green function method and Hartree-Fock decoupling approximation. In the case of asymmetric tunnel-couplings to two electrodes, for example, when the upper level of the quantum dot is open for transport, whereas the lower level is blocked, our calculations predict a strong asymmetry for the heat (energy) current, which shows that the quantum dot system may act as a thermal rectifier in this specific situation.
Quantum dot doped solid polymer electrolyte for device application
Energy Technology Data Exchange (ETDEWEB)
Singh, Pramod K.; Kim, Kang Wook; Rhee, Hee-Woo [Department of Chemical and Biomolecular Engineering, Sogang University, Mapo-Gu, Seoul 121-742 (Korea)
2009-06-15
ZnS capped CdSe quantum dots embedded in PEO:KI:I{sub 2} polymer electrolyte matrix have been synthesized and characterized for dye sensitized solar cell (DSSC) application. The complex impedance spectroscopy shows enhance in ionic conductivity ({sigma}) due to charges provide by quantum dots (QD) while AFM affirm the uniform distribution of QD into polymer electrolyte matrix. Cyclic voltammetry revealed the possible interaction between polymer electrolyte, QD and iodide/iodine. The photovoltaic performances of the DSSC containing quantum dots doped polymer electrolyte was also found to improve. (author)
Quantum dots microstructured optical fiber for x-ray detection
DeHaven, S. L.; Williams, P. A.; Burke, E. R.
2016-02-01
A novel concept for the detection of x-rays with microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide is presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dots application technique are discussed.
Emission redistribution from a quantum dot-bowtie nanoantenna
Regler, A.; Schraml, K.; Lyamkina, A.; Spiegl, M; Müller, K.; Vuckovic, J.; Finley, J. J.; Kaniber, M.
2016-01-01
We present a combined experimental and simulation study of a single self-assembled InGaAs quantum dot coupled to a nearby ($\\sim 25nm$) plasmonic antenna. Micro-photoluminescence spectroscopy shows a $\\sim 2.4\\times$ increase of intensity, which is attributed to spatial far-field redistribution of the emission from the quantum dot-antenna system. Power-dependent studies show similar saturation powers of $2.5\\mu W$ for both coupled and uncoupled quantum dot emission in polarization-resolved me...
Graphene mediated Stark shifting of quantum dot energy levels
Kinnischtzke, Laura; Goodfellow, Kenneth M.; Chakraborty, Chitraleema; Lai, Yi-Ming; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Vamivakas, A. Nick
2016-05-01
We demonstrate an optoelectronic device comprised of single InAs quantum dots in an n-i-Schottky diode where graphene has been used as the Schottky contact. Deterministic electric field tuning is shown using Stark-shifted micro-photoluminescence from single quantum dots. The extracted dipole moments from the Stark shifts are comparable to conventional devices where the Schottky contact is a semi-transparent metal. Neutral and singly charged excitons are also observed in the well-known Coulomb-blockade plateaus. Our results indicate that graphene is a suitable replacement for metal contacts in quantum dot devices which require electric field control.
Semiconductor Quantum Dots in Chemical Sensors and Biosensors
Directory of Open Access Journals (Sweden)
Nikos Chaniotakis
2009-09-01
Full Text Available Quantum dots are nanometre-scale semiconductor crystals with unique optical properties that are advantageous for the development of novel chemical sensors and biosensors. The surface chemistry of luminescent quantum dots has encouraged the development of multiple probes based on linked recognition molecules such as peptides, nucleic acids or small-molecule ligands. This review overviews the design of sensitive and selective nanoprobes, ranging from the type of target molecules to the optical transduction scheme. Representative examples of quantum dot-based optical sensors from this fast-moving field have been selected and are discussed towards the most promising directions for future research.
Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots
Directory of Open Access Journals (Sweden)
Ian D. Tomlinson
2007-01-01
Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.
Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots
2002-01-01
studied in the framework of this, including the collaborating researchers in each of them, are detailed below: 1. “Ultra Small InAs/GaInP/ InP Quantum Dots ”: with...of detectors, which will be attached to Si based signal processors. D:\\FINAL REPORT.doc 4 Part 1 Ultra Small InAs/GaInP/ InP Quantum Dots The heights of...an ensemble of self-assembled InAs/GaAs or InAs/ InP quantum dots (QDs) are typically in the range of 10-30 monolayers [1]. Here, we report on InAs
Temperature Studies of Single InP Quantum Dots
1999-06-18
UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012858 TITLE: Temperature Studies of Single InP Quantum Dots DISTRIBUTION...34 QWR/QD.07 St Petersburg, Russia, June 14-18, 1999 © 1999 loffe Institute Temperature studies of single InP quantum dots Valdry Zwiller, Mats-Erik...Information on the size and geometry of our self-assembled InP Quantum Dots grown on GamnP lattice matched to GaAs has been published elsewhere -I
Solvothermal synthesis of InP quantum dots.
Nag, Angshuman; Sarma, D D
2009-09-01
We report an efficient and fast solvothermal route to prepare highly crystalline monodispersed InP quantum dots. This solvothermal route, not only ensures inert atmosphere, which is strictly required for the synthesis of phase pure InP quantum dots but also allows a reaction temperature as high as 430 degrees C, which is otherwise impossible to achieve using a typical solution chemistry; the higher reaction temperature makes the reaction more facile. This method also has a judicious control over the size of the quantum dots and thus in tuning the bandgap.
Quantum Dots Microstructured Optical Fiber for X-Ray Detection
DeHaven, Stan; Williams, Phillip; Burke, Eric
2015-01-01
Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.
PL Emission and Shape of Silicon Quantum Dots
Institute of Scientific and Technical Information of China (English)
2012-01-01
The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-0-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectra on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided in curved surface effect.About The Author: Zhong-Mei Huang,Master in Guizhou University.
Photocurrent extraction efficiency in colloidal quantum dot photovoltaics
Kemp, K. W.
2013-01-01
The efficiency of photocurrent extraction was studied directly inside operating Colloidal Quantum Dot (CQD) photovoltaic devices. A model was derived from first principles for a thin film p-n junction with a linearly spatially dependent electric field. Using this model, we were able to clarify the origins of recent improvement in CQD solar cell performance. From current-voltage diode characteristics under 1 sun conditions, we extracted transport lengths ranging from 39 nm to 86 nm for these materials. Characterization of the intensity dependence of photocurrent extraction revealed that the dominant loss mechanism limiting the transport length is trap-mediated recombination. © 2013 AIP Publishing LLC.
Photoluminescence intermittency of semiconductor quantum dots in dielectric environments
Energy Technology Data Exchange (ETDEWEB)
Isaac, A.
2006-08-11
The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)
Quantum Dot-Photonic Crystal Cavity QED Based Quantum Information Processing
2012-08-14
Physical Review A, 2012] 3. Study of the off-resonant quantum dot-cavity coupling in solid-state cavity QED system, and the phonon mediated off...resonant interaction between two quantum dots [Majumdar et al., Physical Review B , 2012] 4. Coherent optical spectroscopy of a single quantum dot via an off...Resonant cavity - much simpler than in conventional approaches [Majumdar et al, Physical Review B, 2011; Papageorge et al., New. Journal of Physics
The Electron-Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot
Institute of Scientific and Technical Information of China (English)
XIE Wen-Fang; ZHU Wu
2003-01-01
The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots arestudied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method ofnumerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the bindingenergy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupledquantum dot as a function of the dot radius for different values of the distance and the magnetic field strength.
Quantum computation in a quantum-dot-Majorana-fermion hybrid system
Xue, Zheng-Yuan
2012-01-01
We propose a scheme to implement universal quantum computation in a quantum-dot-Majorana-fermion hybrid system. Quantum information is encoded on pairs of Majorana fermions, which live on the the interface between topologically trivial and nontrivial sections of a quantum nanowire deposited on an s-wave superconductor. Universal single-qubit gates on topological qubit can be achieved. A measurement-based two-qubit Controlled-Not gate is produced with the help of parity measurements assisted by the quantum-dot and followed by prescribed single-qubit gates. The parity measurement, on the quantum-dot and a topological qubit, is achieved by the Aharonov- Casher effect.
Quantum Dots Coupled to a Superconductor
DEFF Research Database (Denmark)
Jellinggaard, Anders Robert
In this thesis, sub-gap states in bottom-gated InAs N–dot–S, N–double dot–S, and N–dot–S–dot–N devices are investigated, and several different theories are developed to model these states. Experimental results include tracking single levels of the dot in an N–dot–S device as the tunnel couplings ...... process, which is based on the general properties of Krylov subspaces alone, and is thus not tied to a specific physical system....... with floating gates. A numerical technique is developed, which predicts the position of Yu-Shiba-Rusinov sub-gap states in the proximitized Anderson model as well as properties of these states. This theory is valid for all occupations of the dot and for weak to intermediate coupling. We compare...
PREFACE: Quantum dots as probes in biology
Cieplak, Marek
2013-05-01
The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated
Kondo effects in triangular triple quantum dots
Oguri, Akira; Numata, Takahide; Nisikawa, Yunori; Hewson, A. C.
2009-03-01
We study the conductance through a triangular triple quantum dot, which is connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S=1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S=1 Kondo effects occur[1]. We will also discuss effects of deformations of the triangular configuration, caused by the inhomogeneity in the inter-dot couplings and in the gate voltages. [4pt] [1] T.Numata, Y.Nisikawa, A.Oguri, and A.C.Hewson: arXiv:0808.3496.
Application of Quantum Dots in Biological Imaging
Directory of Open Access Journals (Sweden)
Shan Jin
2011-01-01
Full Text Available Quantum dots (QDs are a group of semiconducting nanomaterials with unique optical and electronic properties. They have distinct advantages over traditional fluorescent organic dyes in chemical and biological studies in terms of tunable emission spectra, signal brightness, photostability, and so forth. Currently, the major type of QDs is the heavy metal-containing II-IV, IV-VI, or III-V QDs. Silicon QDs and conjugated polymer dots have also been developed in order to lower the potential toxicity of the fluorescent probes for biological applications. Aqueous solubility is the common problem for all types of QDs when they are employed in the biological researches, such as in vitro and in vivo imaging. To circumvent this problem, ligand exchange and polymer coating are proven to be effective, besides synthesizing QDs in aqueous solutions directly. However, toxicity is another big concern especially for in vivo studies. Ligand protection and core/shell structure can partly solve this problem. With the rapid development of QDs research, new elements and new morphologies have been introduced to this area to fabricate more safe and efficient QDs for biological applications.
Mitochondria as target of Quantum dots toxicity
Energy Technology Data Exchange (ETDEWEB)
Li, Jiahan; Zhang, Yue; Xiao, Qi; Tian, Fangfang; Liu, Xiaorong; Li, Ran; Zhao, Guangyuan; Jiang, Fenglei [State Key Laboratory of Virology and Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education), College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072 (China); Liu, Yi, E-mail: yiliuchem@whu.edu.cn [State Key Laboratory of Virology and Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education), College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072 (China)
2011-10-30
Highlights: {yields} The present work investigated the toxicity of CdTe QDs on the function of mitochondria isolated from rat livers. {yields} These results will help us learn more about QDs toxicity at subcellular (mitochondrial) level. {yields} QDs toxicity on mitochondria indicates that the QDs require to be further improved before they can be safely used in clinic. - Abstract: Quantum dots (QDs) hold great promise in many biological applications, with the persistence of safety concerns about the environment and human health. The present work investigated the potential toxicity of CdTe QDs on the function of mitochondria isolated from rat livers by examining mitochondrial respiration, swelling, and lipid peroxidation. We observed that QDs can significantly affect the mitochondrial membrane properties, bioenergetics and induce mitochondrial permeability transition (MPT). These results will help us learn more about QDs toxicity at subcellular (mitochondrial) level.
Optoelectronic Applications of Colloidal Quantum Dots
Wang, Zhiping; Zhang, Nanzhu; Brenneman, Kimber; Wu, Tsai Chin; Jung, Hyeson; Biswas, Sushmita; Sen, Banani; Reinhardt, Kitt; Liao, Sicheng; Stroscio, Michael A.; Dutta, Mitra
This chapter highlights recent optoelectronic applications of colloidal quantum dots (QDs). In recent years, many colloidal QD-based optoelectronic devices, and device concepts have been proposed and studied. Many of these device concepts build on traditional optoelectronic device concepts. Increasingly, many new optoelectronic device concepts have been based on the use of biomolecule QD complexes. In this chapter, both types of structures are discussed. Special emphasis is placed on new optoelectronic device concepts that incorporate DNA-based aptamers in biomolecule QD complexes. Not only are the extensions of traditional devices and concepts realizable, such as QD-based photo detectors, displays, photoluminescent and photovoltaic devices, light-emitting diodes (LEDs), photovoltaic devices, and solar cells, but new devices concepts such a biomolecule-based molecular sensors possible. This chapter highlights a number of such novel QD-based devices and device concepts.
Quantum Dot Devices for Optical Signal Processing
DEFF Research Database (Denmark)
Chen, Yaohui
. Additional to the static linear amplication properties, we focus on exploring the gain dynamics on the time scale ranging from sub-picosecond to nanosecond. In terms of optical signals that have been investigated, one is the simple sinusoidally modulated optical carrier with a typical modulation frequency...... range of 1-100 gigahertz. Our simulations reveal the role of ultrafast intradot carrier dynamics in enhancing modulation bandwidth of quantum dot semiconductor optical ampliers. Moreover, the corresponding coherent gain response also provides rich dispersion contents over a broad bandwidth. One...... important implementation is recently boosted by the research in slow light. The idea is to migrate such dynamical gain knowledge for the investigation of microwave phase shifter based on semiconductor optical waveguide. Our study reveals that phase shifting based on the conventional semiconductor optical...
Semiconductor quantum dot-inorganic nanotube hybrids.
Kreizman, Ronen; Schwartz, Osip; Deutsch, Zvicka; Itzhakov, Stella; Zak, Alla; Cohen, Sidney R; Tenne, Reshef; Oron, Dan
2012-03-28
A synthetic route for preparation of inorganic WS(2) nanotube (INT)-colloidal semiconductor quantum dot (QD) hybrid structures is developed, and transient carrier dynamics on these hybrids are studied via transient photoluminescence spectroscopy utilizing several different types of QDs. Measurements reveal efficient resonant energy transfer from the QDs to the INT upon photoexcitation, provided that the QD emission is at a higher energy than the INT direct gap. Charge transfer in the hybrid system, characterized using QDs with band gaps below the INT direct gap, is found to be absent. This is attributed to the presence of an organic barrier layer due to the relatively long-chain organic ligands of the QDs under study. This system, analogous to carbon nanotube-QD hybrids, holds potential for a variety of applications, including photovoltaics, luminescence tagging and optoelectronics.
Tellurium quantum dots: Preparation and optical properties
Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping
2017-08-01
Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.
Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots
Institute of Scientific and Technical Information of China (English)
Guo Ru-Hai; Shi Hong-Yan; Sun Xiu-Dong
2004-01-01
The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or "truncated pyramid" are calculated and analysed. We use a method based on the Green function technique for calculating the strain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.
Tunable Few-Electron Quantum Dots as Spin Qubits
Elzerman, Jeroen; Hanson, Ronald; Greidanus, Jacob; Willems van Beveren, Laurens; de Franceschi, Silvano; Vandersypen, Lieven; Tarucha, Seigo; Kouwenhoven, Leo
2003-03-01
Recently it was proposed to make a quantum bit using the spin of an electron in a quantum dot. We present the first experimental steps towards realizing a system of two coupled qubits. The Zeeman splitting between the two spin states defining the qubit is measured for a one-electron dot in a parallel magnetic field. For a two-electron dot, we control the spin singlet-triplet energy difference with a perpendicular magnetic field, and we induce a transition from singlet to triplet ground state. We find relaxation from triplet to singlet to be extremely slow (> 1 mus), which is promising for quantum computing. We couple two few-electron dots, creating the first fully tunable few-electron double dot. Its charge configuration can be read out with a nearby QPC acting as an integrated charge detector.
Bound polarons in quantum dot quantum well structures
Institute of Scientific and Technical Information of China (English)
Xing Yan; Wang Zhi-Ping; Wang Xu
2009-01-01
The problem of bound polarons in quantum dot quantum well (QDQW) structures is studied theoretically. The eigenfrequencies of bulk longitudinal optical (LO) and surface optical (SO) modes are derived in the framework of the diclectric continuum approximation. The electron-phonon interaction Hamiltonian for QDQW structures is obtained and the exchange interaction between impurity and LO-phonons is discussed. The binding energy and the trapping energy of the bound polaron in CdS/HgS QDQW structures are calculated. The numcrical results reveal that there exist three branches of eigenfrequcncies of surface optical vibration in the CdS/HgS QDQW structure. It is also shown that the binding energy and the trapping energy increase as the inner radius of the QDQW structure decreases, with the outer radius fixed, and the trapping energy takes a major part of the binding energy when the inner radius is very small.
Excitons in quantum-dot quantum-well nanoparticles
Institute of Scientific and Technical Information of China (English)
史俊杰
2002-01-01
A variational calculation is presented for the ground-state properties of excitons confined in spherical core-shell quantum-dot quantum-well (QDQW) nanoparticles. The relationship between the exciton states and structure parameters of QDQW nanoparticles is investigated, in which both the heavy-hole and the light-hole exciton states are considered. The results show that the confinement energies of the electron and hole states and the exciton binding energies depend sensitively on the well width and core radius of the QDQW structure. A detailed comparison between the heavy-hole and light-hole exciton states is given. Excellent agreement is found between experimental results and our calculated 1se-1sh transition energies.
Measuring Charge Carrier Diffusion in Coupled Colloidal Quantum Dot Solids
Zhitomirsky, David
2013-06-25
Colloidal quantum dots (CQDs) are attractive materials for inexpensive, room-temperature-, and solution-processed optoelectronic devices. A high carrier diffusion length is desirable for many CQD device applications. In this work we develop two new experimental methods to investigate charge carrier diffusion in coupled CQD solids under charge-neutral, i.e., undepleted, conditions. The methods take advantage of the quantum-size-effect tunability of our materials, utilizing a smaller-bandgap population of quantum dots as a reporter system. We develop analytical models of diffusion in 1D and 3D structures that allow direct extraction of diffusion length from convenient parametric plots and purely optical measurements. We measure several CQD solids fabricated using a number of distinct methods and having significantly different doping and surface ligand treatments. We find that CQD materials recently reported to achieve a certified power conversion efficiency of 7% with hybrid organic-inorganic passivation have a diffusion length of 80 ± 10 nm. The model further allows us to extract the lifetime, trap density, mobility, and diffusion coefficient independently in each material system. This work will facilitate further progress in extending the diffusion length, ultimately leading to high-quality CQD solid semiconducting materials and improved CQD optoelectronic devices, including CQD solar cells. © 2013 American Chemical Society.
Exciton lifetime measurements on single silicon quantum dots.
Sangghaleh, Fatemeh; Bruhn, Benjamin; Schmidt, Torsten; Linnros, Jan
2013-06-01
We measured the exciton lifetime of single silicon quantum dots, fabricated by electron beam lithography, reactive ion etching and oxidation. The observed photoluminescence decays are of mono-exponential character with a large variation (5-45 μs) from dot to dot, even for the same emission energy. We show that this lifetime variation may be the origin of the heavily debated non-exponential (stretched) decays typically observed for ensemble measurements.
Luminescent behavior of cadmium sulfide quantum dots for gallic acid estimation
Singh, Suman; Garg, Sourav; Chahal, Jitender; Raheja, Khushboo; Singh, Deepak; Singla, M. L.
2013-03-01
Thioglycolic acid capped cadmium sulfide (CdS/T) quantum dots have been synthesized using wet chemistry and their optical behavior has been investigated using UV-visible absorption and fluorescence spectroscopy. The role of the capping agent, sulfide source concentration, pH and temperature has been studied and discussed. Studies showed that alkaline pH leads to a decrease in the size of quantum dots and reflux temperature above 70 °C resulted in red-shift of emission spectra which is due to narrowing of the bandgap. Further, to reduce the toxicity and photochemical instability of quantum dots, the quantum dots have been functionalized with polyethylene glycol (PEG), which resulted in a 20% enhancement of the fluorescence intensity. The application potential of CdS/T-PEG quantum dots was further studied using gallic acid as a model compound. The sensing is based on fluorescence quenching of quantum dots in the presence of gallic acid, and this study showed linearity in the range from 1.3 × 10-8 to 46.5 × 10-8 mM, with a detection limit of 3.6 × 10-8 mM.
Luminescent behavior of cadmium sulfide quantum dots for gallic acid estimation.
Singh, Suman; Garg, Sourav; Chahal, Jitender; Raheja, Khushboo; Singh, Deepak; Singla, M L
2013-03-22
Thioglycolic acid capped cadmium sulfide (CdS/T) quantum dots have been synthesized using wet chemistry and their optical behavior has been investigated using UV-visible absorption and fluorescence spectroscopy. The role of the capping agent, sulfide source concentration, pH and temperature has been studied and discussed. Studies showed that alkaline pH leads to a decrease in the size of quantum dots and reflux temperature above 70 °C resulted in red-shift of emission spectra which is due to narrowing of the bandgap. Further, to reduce the toxicity and photochemical instability of quantum dots, the quantum dots have been functionalized with polyethylene glycol (PEG), which resulted in a 20% enhancement of the fluorescence intensity. The application potential of CdS/T-PEG quantum dots was further studied using gallic acid as a model compound. The sensing is based on fluorescence quenching of quantum dots in the presence of gallic acid, and this study showed linearity in the range from 1.3 × 10(-8) to 46.5 × 10(-8) mM, with a detection limit of 3.6 × 10(-8) mM.
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications
Directory of Open Access Journals (Sweden)
Lin Wen
2017-07-01
Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.
Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing
2017-07-28
Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Long-distance coherent coupling in a quantum dot array.
Braakman, F R; Barthelemy, P; Reichl, C; Wegscheider, W; Vandersypen, L M K
2013-06-01
Controlling long-distance quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-distance correlations requires sequential local operations. Here, we show that two distant sites can be tunnel-coupled directly. The coupling is mediated by virtual occupation of an intermediate site, with a strength that is controlled via the energy detuning of this site. It permits a single charge to oscillate coherently between the outer sites of a triple dot array without passing through the middle, as demonstrated through the observation of Landau-Zener-Stückelberg interference. The long-distance coupling significantly improves the prospects of fault-tolerant quantum computation using quantum dot arrays, and opens up new avenues for performing quantum simulations in nanoscale devices.
Energy Technology Data Exchange (ETDEWEB)
Jeong, Sang Hoon; Kim, Jae Hwan; Yi, Sang Min [Laboratory of Cell Signaling and Nanomedicine, Department of Dermatology and Division of Brain Korea 21 Project for Biomedical Science, Korea University College of Medicine, Seoul (Korea, Republic of); Lee, Jung Pyo; Kim, Jin Ho; Sohn, Kyung Hee; Park, Kui Lea [National Institute of Toxicological Research, Seoul (Korea, Republic of); Kim, Meyoung-Kon [Department of Biochemistry and Molecular Biology, Korea University College of Medicine, Seoul (Korea, Republic of); Son, Sang Wook, E-mail: skin4u@korea.ac.kr [Laboratory of Cell Signaling and Nanomedicine, Department of Dermatology and Division of Brain Korea 21 Project for Biomedical Science, Korea University College of Medicine, Seoul (Korea, Republic of)
2010-04-09
Quantum dots (QDs) are rapidly emerging as an important class of nanoparticles (NPs) with potential applications in medicine. However, little is known about penetration of QDs through human skin. This study investigated skin penetration of QDs in both in vivo and in vitro human skin. Using the tape stripping method, this study demonstrates for the first time that QDs can actually penetrate through the stratum corneum (SC) of human skin. Transmission electron microscope (TEM) and energy diverse X-ray (EDX) analysis showed accumulation of QDs in the SC of a human skin equivalent model (HSEM) after dermal exposure to QDs. These findings suggest possible transdermal absorption of QDs after dermal exposure over a relatively long period of time.
Hechster, Elad; Sarusi, Gabby
2017-07-01
The complex dielectric function ɛ(E )=ɛR(E )+i ɛI(E ) of a semiconductor is a key parameter that dictates the material's optical and electrical properties. Surprisingly, the ɛ(E ) of Lead Sulfide (PbS) quantum dots (QDs) has not been widely studied. In the present work, we develop a new model that aims to simulate the ɛ(E ) of QDs. Our model is based on the fact that the quantum confinement in the nano regime affects all the electronic transitions throughout the entire Brillouin zone. Hence, as a first approximation, we attribute an equal contribution of energy, equivalent to the bandgap broadening, to each critical point (CP) in the E-k diagram. This is mathematically realized by adding these energy contributions to the central energy parameters of the Lorentz oscillator model. In order to validate our model, we used the CP parameters of bulk PbS to simulate the ɛ(E ) of PbS QDs. Next, we use Maxwell Relations to calculate the refractive index and the extinction coefficient of PbS QDs from ɛ(" separators="|E ). Our results were compared with those published in the previous literature and showed good agreement. Our findings open a new avenue that may enable the calculation of the ɛ(" separators="|E ) for nanoparticle systems.
Long lived coherence in self-assembled quantum dots
DEFF Research Database (Denmark)
Birkedal, Dan; Leosson, Kristjan; Hvam, Jørn Märcher
2001-01-01
We report measurements of ultralong coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 mu eV, which is significantly smaller than the linewidth observed in single-dot lum...
Ultrafast gain and index dynamics in quantum dot amplifiers
DEFF Research Database (Denmark)
Borri, Paola; Langbein, Wolfgang; Mørk, Jesper
1999-01-01
The ultrafast dynamics of gain and refractive index in an InAs/GaAs quantum dot amplifier are investigated at room temperature. The gain is observed to recover with a 90 fs time constant, ruling out problems of slow carrier capture into the dots, and making this component promising for high...
Electric and Magnetic Interaction between Quantum Dots and Light
DEFF Research Database (Denmark)
Tighineanu, Petru
a future challenge for the droplet-epitaxy technique. A multipolar theory of spontaneous emission from quantum dots is developed to explain the recent observation that In(Ga)As quantum dots break the dipole theory. The analysis yields a large mesoscopic moment, which contains magnetic-dipole and electric......-matter interaction of both electric and magnetic character. Our study demonstrates that In(Ga)As quantum dots lack parity symmetry and, as consequence, can be employed for locally probing the parity symmetry of complex photonic nanostructures. This opens the prospect for interfacing quantum dots with optical...... metamaterials for tailoring light-matter interaction at the single-electron and single-photon level....
Nonequilibrium electron transport through quantum dots in the Kondo regime
DEFF Research Database (Denmark)
Wölfle, Peter; Paaske, Jens; Rosch, Achim
2005-01-01
Electron transport at large bias voltage through quantum dots in the Kondo regime is described within the perturbative renormalization group extended to nonequilibrium. The conductance, local magnetization, dynamical spin susceptibility and local spectral function are calculated. We show how the ...
Non-Markovian spontaneous emission from a single quantum dot
DEFF Research Database (Denmark)
Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke;
2011-01-01
We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....
Heterovalent cation substitutional doping for quantum dot homojunction solar cells
Stavrinadis, Alexandros; Rath, Arup K.; de Arquer, F. Pelayo García; Diedenhofen, Silke L.; Magén, César; Martinez, Luis; So, David; Konstantatos, Gerasimos
2013-12-01
Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%.
Colloidal Quantum-Dot Photodetectors Exploiting Multiexciton Generation
National Research Council Canada - National Science Library
Vlad Sukhovatkin; Sean Hinds; Lukasz Brzozowski; Edward H. Sargent
2009-01-01
Multiexciton generation (MEG) has been indirectly observed in colloidal quantum dots, both in solution and the solid state, but has not yet been shown to enhance photocurrent in an optoelectronic device...
Advanced Epitaxial Lift-Off Quantum Dot Photovoltaic Devices Project
National Aeronautics and Space Administration — We propose to develop a high-efficiency, triple-junction, epitaxial lift-off (ELO) solar cell by incorporating quantum dots (QDs) within the current-limiting...
Quantum dot conjugates in a sub-micrometer fluidic channel
Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.
2010-04-13
A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.
A fast "hybrid" silicon double quantum dot qubit
Shi, Zhan; Prance, J R; Gamble, John King; Koh, Teck Seng; Shim, Yun-Pil; Hu, Xuedong; Savage, D E; Lagally, M G; Eriksson, M A; Friesen, Mark; Coppersmith, S N
2011-01-01
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\\half$) and $S_z = -\\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.
Berry phase jumps and giant nonreciprocity in Dirac quantum dots
Rodriguez-Nieva, Joaquin F.; Levitov, Leonid S.
2016-12-01
We predict that a strong nonreciprocity in the resonance spectra of Dirac quantum dots can be induced by the Berry phase. The nonreciprocity arises in relatively weak magnetic fields and is manifest in anomalously large field-induced splittings of quantum dot resonances which are degenerate at B =0 due to time-reversal symmetry. This exotic behavior, which is governed by field-induced jumps in the Berry phase of confined electronic states, is unique to quantum dots in Dirac materials and is absent in conventional quantum dots. The effect is strong for gapless Dirac particles and can overwhelm the B -induced orbital and Zeeman splittings. A finite Dirac mass suppresses the effect. The nonreciprocity, predicted for generic two-dimensional Dirac materials, is accessible through Faraday and Kerr optical rotation measurements and scanning tunneling spectroscopy.
Type 2 quantum dots in Ge/Si system
Dvurechenskij, A V
2001-01-01
The results on the electronic structure of spatially indirect excitons, multiparticle excitonic complexes, and negative interband photoconductivity in arrays of Ge/Si type 2 quantum dots are presented. These data have been compared with the well known results for type 2 A sup I sup I sup I B sup V and A sup I sup I B sup V sup I -based heterostructures with quantum dots. Fundamental physical phenomena are found to be the result of an increase in the binding energy of excitons in quantum dots as compared with that of free excitons in bulk homogeneous materials; the shortwave shift of exciton transition energy at multiparticle complexes production (charges excitons, biexcitons), as well as the trapping of equilibrium carrier by localized states induced by the charged quantum dot electric field
Probing of Unembedded Metallic Quantum Dots with Positrons
Energy Technology Data Exchange (ETDEWEB)
Fischer, C G; Denison, A B; Weber, M H; Wilcoxon, J P; Woessner, S; Lynn, K G
2003-08-01
We employed the two detector coincident Doppler Broadening Technique (coPAS) to investigate Ag, Au and Ag/Au alloy quantum dots of varying sizes which were deposited in thin layers on glass slides. The Ag quantum dots range from 2 to 3 nm in diameter, while the Ag/Au alloy quantum dots exhibit Ag cores of 2 nm and 3 nm and Au shells of varying thickness. We investigate the possibility of positron confinement in the Ag core due to positron affinity differences between Ag and Au. We describe the results and their significance to resolving the issue of whether positrons annihilate within the quantum dot itself or whether surface and positron escape effects play an important role.
Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells.
Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu
2016-12-01
Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells.
Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate
Qiu, Y.; Uhl, D.
2002-01-01
InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
Electric properties of Ge quantum dot embedded in Si matrix
Institute of Scientific and Technical Information of China (English)
MA Xi-ying; SHI Wei-lin
2005-01-01
The electric characteristics of Ge quantum dot grown by molecular beam epitaxy in Si matrix were investigated by admittance spectroscopy and deep level transient spectroscopy. The admittance spectroscopy measurements show that the activation energy of 0.341 eV can be considered as the emitting energy of hole from the ground state of the quantum dot. And the capacitance variation with temperature of the sample shows a platform at various frequencies with reverse bias 0.5 V, which indicates that the boundary of space charge region is located at the quantum dot layer where the large confined hole concentration blocks the further extension of space charge region. When the temperature increases from 120 K to 200 K, the holes in the dot emit out completely. The position of the platform shifting with the increase of the applied frequency shows the frequency effects of the charges in the quantum dot. The deep level transient spectroscopy results show that the charge concentration in the Ge quantum dot is a function of the pulse duration and the reverse bias voltage, the activation energy and capture cross-section of hole decrease with the increase of pulse duration due to the Coulomb charging effect. The valence-band offsets of hole in Ge dot obtained by admittance spectroscopy and deep level transient spectroscopy are 0.341 and 0.338 eV, respectively.
Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
Brauns, M.; Ridderbos, Joost; Ridderbos, Joost; Li, Ang; van der Wiel, Wilfred Gerard; Bakkers, Erik P.A.M.; Zwanenburg, Floris Arnoud
2016-01-01
We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over
Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells
Choi, Joshua J.
2011-06-03
Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
THz Electro-absorption Effect in Quantum Dots
DEFF Research Database (Denmark)
Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.;
2011-01-01
Instantaneous electro-absorption effect in quantum dots, induced by electric field of THz pulse with 3 THz bandwidth is demonstrated in THz pump - optical probe experiment. This effect may be promising for Tbit/s wireless transmission systems.......Instantaneous electro-absorption effect in quantum dots, induced by electric field of THz pulse with 3 THz bandwidth is demonstrated in THz pump - optical probe experiment. This effect may be promising for Tbit/s wireless transmission systems....
Optical phonons in Ge quantum dots obtained on Si(111)
Talochkin, A B
2002-01-01
The light combination scattering on the optical phonons in the Ge quantum dots, obtained on the Si surface of the (111) orientation through the molecular-beam epitaxy, is studied. The series of lines, connected with the phonon spectrum quantization, was observed. It is shown, that the phonon modes frequencies are well described by the elastic properties and dispersion of the voluminous Ge optical phonons. The value of the Ge quantum dots deformation is determined
Noise and saturation properties of semiconductor quantum dot optical amplifiers
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper
2002-01-01
We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....
Dynamical symmetries in Kondo tunneling through complex quantum dots.
Kuzmenko, T; Kikoin, K; Avishai, Y
2002-10-07
Kondo tunneling reveals hidden SO(n) dynamical symmetries of evenly occupied quantum dots. As is exemplified for an experimentally realizable triple quantum dot in parallel geometry, the possible values n=3,4,5,7 can be easily tuned by gate voltages. Following construction of the corresponding o(n) algebras, scaling equations are derived and Kondo temperatures are calculated. The symmetry group for a magnetic field induced anisotropic Kondo tunneling is SU(2) or SO(4).
Solution-processed nanocrystal quantum dot tandem solar cells
Energy Technology Data Exchange (ETDEWEB)
Choi, Joshua J.; Lim, Yee-Fun [School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853 (United States); Wenger, Whitney N.; Hoffman, Rachel S.; Hanrath, Tobias [School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, NY 14853 (United States); Luria, Justin; Marohn, John A. [Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853 (United States); Jasieniak, Jacek [CSIRO Materials Science and Engineering, Bayview Ave, Clayton, Victoria 3168 (Australia)
2011-07-26
Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V{sub oc}, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
On the density of states of circular graphene quantum dots
Chau Nguyen, H.; Nguyen, Nhung T. T.; Nguyen, V. Lien
2017-10-01
We suggest a simple approach to calculate the local density of states that effectively applies to any structure created by an axially symmetric potential on a continuous graphene sheet such as circular graphene quantum dots or rings. Calculations performed for the graphene quantum dot studied in a recent scanning tunneling microscopy measurement (Gutierrez et al 2016 Nat. Phys. 12 1069–75) show an excellent experimental-theoretical agreement.