WorldWideScience

Sample records for micromachined silicon sensor

  1. A silicon micromachined resonant pressure sensor

    International Nuclear Information System (INIS)

    Tang Zhangyang; Fan Shangchun; Cai Chenguang

    2009-01-01

    This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

  2. Silicon Micromachined Sensor for Broadband Vibration Analysis

    Science.gov (United States)

    Gutierrez, Adolfo; Edmans, Daniel; Cormeau, Chris; Seidler, Gernot; Deangelis, Dave; Maby, Edward

    1995-01-01

    The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

  3. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  4. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  5. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  6. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  7. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  8. Development of micro capacitive accelerometer for subsurface microseismic measurement. Second Report; Micromachining ni yoru chika danseiha kenshutsu no tame no silicone yoryogata kasokudo sensor no seisaku. 2

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Lim, G; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan)

    1997-10-22

    Micromachining-aided manufacture is under way of a silicon capacitive accelerator sensor, high in sensitivity and broad in bandwidth, for detecting subsurface microseismic waves. The sensor detects acceleration by use of changes in capacities of the top and bottom capacitors generated when a spring-supported weight experiences displacement upon application of acceleration to the said weight. A diode bridge circuit is employed as the circuit for detecting acceleration. As for sensitivity of the sensor, when the virtual noise inputted into the electronic circuit is presumed at 1{mu}V and the circuit driving voltage at 5V, the sensor minimum detectability will be 2.5mgal in the presence of a 3{mu}m gap between the weight and an electrode plate. The natural vibration frequency is set at 1kHz. Such specifications may be realized using the current micromachining technology, and possibilities are that the bandwidth will be further expanded when the sensor is used in a servo-type configuration. The effort is still at the stage of acceleration sensor manufacturing, with a stopper just formed for the silicon weight. 9 refs., 6 figs., 1 tab.

  9. Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

    Science.gov (United States)

    Buettel, G.; Joppich, J.; Hartmann, U.

    2017-12-01

    Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

  10. Development of micro capacitive accelerometer for subsurface microseismic measurement; Micromachining ni yoru chika danseiha kenshutsu no tame no silicon yoryogata kasokudo sensor no seisaku

    Energy Technology Data Exchange (ETDEWEB)

    Nishizawa, M; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan). Faculty of Engineering

    1997-05-27

    A silicon capacitive accelerometer was fabricated to detect subsurface elastic waves by using micromachining technology. Characteristics required for it call for capability of detecting acceleration with amplitudes from 0.1 to 1 gal and flat amplitude characteristics in frequency bands of 10 Hz to several kHz. For the purpose of measuring transition phenomena, linear phase characteristics in the required bands must be guaranteed, cross sensitivity must be small, and resistance to water, pressure and heat is demanded. Sensitivity of the sensor is determined finally by noise level in a detection circuit. The sensor`s minimum detection capability was 40 mgal in the case of the distance between a weight and an electrode being 3 {mu}m. This specification value is a value realizable by the current micromachining technology. Dimensions for the weight and other members were decided with the natural frequency to make band width 2 kHz set to 4 kHz. Completion of the product has not been achieved yet, however, because of a problem that the weight gets stuck on the electrode plate in anode bonding in the assembly process. 7 refs., 5 figs., 1 tab.

  11. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  12. Silicon Micromachines for Science and Technology

    International Nuclear Information System (INIS)

    Bishop, David J.

    2002-01-01

    The era of silicon micromechanics is upon us. In areas as diverse as telecommunications, automotive, aerospace, chemistry, entertainment and basic science, the ability to build microscopic machines from silicon is having a revolutionary impact. In my talk, I will discuss what micromachines are, how they are built and show examples of how they will have a revolutionary impact in many areas of science as well as technology.

  13. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  14. A fully packaged micromachined single crystalline resonant force sensor

    Energy Technology Data Exchange (ETDEWEB)

    Cavalloni, C.; Gnielka, M.; Berg, J. von [Kistler Instrumente AG, Winterthur (Switzerland); Haueis, M.; Dual, J. [ETH Zuerich, Inst. of Mechanical Systems, Zuerich (Switzerland); Buser, R. [Interstate Univ. of Applied Science Buchs, Buchs (Switzerland)

    2001-07-01

    In this work a fully packaged resonant force sensor for static load measurements is presented. The working principle is based on the shift of the resonance frequency in response to the applied load. The heart of the sensor, the resonant structure, is fabricated by micromachining using single crystalline silicon. To avoid creep and hysteresis and to minimize temperature induced stress the resonant structure is encapsulated using an all-in-silicon solution. This means that the load coupling, the excitation of the microresonator and the detection of the oscillation signal are integrated in only one single crystalline silicon chip. The chip is packaged into a specially designed housing made of steel which has been designed with respect to application in harsh environments. The unloaded sensor has an initial frequency of about 22,5 kHz. The sensitivity amounts to 26 Hz/N with a linearity error significantly less than 0,5%FSO. (orig.)

  15. Acceleration sensitivity of micromachined pressure sensors

    Science.gov (United States)

    August, Richard; Maudie, Theresa; Miller, Todd F.; Thompson, Erik

    1999-08-01

    Pressure sensors serve a variety of automotive applications, some which may experience high levels of acceleration such as tire pressure monitoring. To design pressure sensors for high acceleration environments it is important to understand their sensitivity to acceleration especially if thick encapsulation layers are used to isolate the device from the hostile environment in which they reside. This paper describes a modeling approach to determine their sensitivity to acceleration that is very general and is applicable to different device designs and configurations. It also describes the results of device testing of a capacitive surface micromachined pressure sensor at constant acceleration levels from 500 to 2000 g's.

  16. Micromachined pressure/flow-sensor

    NARCIS (Netherlands)

    Oosterbroek, R.E.; Lammerink, Theodorus S.J.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt; van den Berg, Albert

    1999-01-01

    The micromechanical equivalent of a differential pressure flow-sensor, well known in macro mechanics, is discussed. Two separate pressure sensors are used for the device, enabling to measure both, pressure as well as volume flow-rate. An integrated sensor with capacitive read-out as well as a

  17. A sensitive optical micro-machined ultrasound sensor (OMUS) based on a silicon photonic ring resonator on an acoustical membrane

    NARCIS (Netherlands)

    Leinders, S.M.; Westerveld, W.J.; Pozo Torres, J.M.; Neer, P.L.M.J. van; Snyder, B.; O'Brien, P.; Urbach, H.P.; Jong, N. de; Verweij, M.D.

    2015-01-01

    With the increasing use of ultrasonography, especially in medical imaging, novel fabrication techniques together with novel sensor designs are needed to meet the requirements for future applications like three-dimensional intercardiac and intravascular imaging. These applications require arrays of

  18. 3D capacitive tactile sensor using DRIE micromachining

    Science.gov (United States)

    Chuang, Chiehtang; Chen, Rongshun

    2005-07-01

    This paper presents a three dimensional micro capacitive tactile sensor that can detect normal and shear forces which is fabricated using deep reactive ion etching (DRIE) bulk silicon micromachining. The tactile sensor consists of a force transmission plate, a symmetric suspension system, and comb electrodes. The sensing character is based on the changes of capacitance between coplanar sense electrodes. High sensitivity is achieved by using the high aspect ratio interdigital electrodes with narrow comb gaps and large overlap areas. The symmetric suspension mechanism of this sensor can easily solve the coupling problem of measurement and increase the stability of the structure. In this paper, the sensor structure is designed, the capacitance variation of the proposed device is theoretically analyzed, and the finite element analysis of mechanical behavior of the structures is performed.

  19. Sensors and Micromachined Devices for the Automotive and New Markets: The Delphi Delco Electronics MEMS Story.

    Science.gov (United States)

    Logsdon, James

    2002-03-01

    This presentation will provide a brief history of the development of MEMS products and technology, beginning with the manifold absolute pressure sensor in the late seventies through the current variety of Delphi Delco Electronics sensors available today. The technology development of micromachining from uncompensated P plus etch stops to deep reactive ion etching and the technology development of wafer level packaging from electrostatic bonding to glass frit sealing and silicon to silicon direct bonding will be reviewed.

  20. Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

    Science.gov (United States)

    Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

    Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

  1. Silicon Micromachining in RF and Photonic Applications

    Science.gov (United States)

    Lin, Tsen-Hwang; Congdon, Phil; Magel, Gregory; Pang, Lily; Goldsmith, Chuck; Randall, John; Ho, Nguyen

    1995-01-01

    Texas Instruments (TI) has developed membrane and micromirror devices since the late 1970s. An eggcrate space membrane was used as the spatial light modulator in the early years. Discrete micromirrors supported by cantilever beams created a new era for micromirror devices. Torsional micromirror and flexure-beam micromirror devices were promising for mass production because of their stable supports. TI's digital torsional micromirror device is an amplitude modulator (known as the digital micromirror device (DMD) and is in production development, discussed elsewhere. We also use a torsional device for a 4 x 4 fiber-optic crossbar switch in a 2 cm x 2 cm package. The flexure-beam micromirror device is an analog phase modulator and is considered more efficient than amplitude modulators for use in optical processing systems. TI also developed millimeter-sized membranes for integrated optical switches for telecommunication and network applications. Using a member in radio frequency (RF) switch applications is a rapidly growing area because of the micromechanical device performance in microsecond-switching characteristics. Our preliminary membrane RF switch test structure results indicate promising speed and RF switching performance. TI collaborated with MIT for modeling of metal-based micromachining.

  2. Micromachining of buried micro channels in silicon

    NARCIS (Netherlands)

    de Boer, Meint J.; Tjerkstra, R.W.; Berenschot, Johan W.; Jansen, Henricus V.; Burger, G.J.; Burger, G.J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; van den Berg, Albert

    A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper. The micro structures are constructed by trench etching, coating of the

  3. Monitoring of yeast cell concentration using a micromachined impedance sensor

    NARCIS (Netherlands)

    Krommenhoek, E.E.; Gardeniers, Johannes G.E.; Bomer, Johan G.; van den Berg, Albert; Li, X.; Ottens, M.; van der Wielen, L.A.M.; van Dedem, G.W.K.; van Leeuwen, M.; van Gulik, W.M.; Heijnen, J.J.

    2005-01-01

    The paper describes the design, modelling and experimental characterization of a micromachined impedance sensor for on-line monitoring of the viable yeast cell concentration (biomass) in a miniaturized cell assay. Measurements in a Saccharomyces cerevisiae cell culture show that the permittivity of

  4. A micromachined surface stress sensor with electronic readout

    NARCIS (Netherlands)

    Carlen, Edwin; Weinberg, M.S.; Zapata, A.M.; Borenstein, J.T.

    2008-01-01

    A micromachined surface stress sensor has been fabricated and integrated off chip with a low-noise, differential capacitance, electronic readout circuit. The differential capacitance signal is modulated with a high frequency carrier signal, and the output signal is synchronously demodulated and

  5. Characterization of bulk-micromachined direct-bonded silicon nanofilters

    Science.gov (United States)

    Tu, Jay K.; Huen, Tony; Szema, Robert; Ferrari, Mauro

    1998-03-01

    The ability to separate 30-100 nm particles - nanofiltration - is critical for many biomedical applications. Where this filtration needs to be absolute, such as for viral elimination in the blood fractionation process, the large variations in pore size found with conventional polymeric filters can lead to the unwanted presence of viruses in the filtrate. To overcome this problem, we have developed a filter with micromachined channels sandwiched between two bonded silicon wafers. These channels are formed through the selective deposition and then removal of a thermally-grown oxide, the thickness of which can be controlled to +/- 4 percent for 30 nm pores. In this paper, we will present both the gas and liquid characterization, and the filtration studies done on 44 and 100 nm beads.

  6. A Novel Silicon Micromachined Integrated MCM Thermal Management System

    Science.gov (United States)

    Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

    1997-01-01

    "Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high

  7. Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

    International Nuclear Information System (INIS)

    Yu Xiaomei; Tang Yaquan; Zhang Haitao

    2008-01-01

    This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

  8. Micromachined Sensors for Hypersonic Flows, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Interdisciplinary Consulting Corporation proposes a sensor that offers the unique capability to make wall shear stress measurement and pressure measurements for time...

  9. Silicon micromachining using a high-density plasma source

    International Nuclear Information System (INIS)

    McAuley, S.A.; Ashraf, H.; Atabo, L.; Chambers, A.; Hall, S.; Hopkins, J.; Nicholls, G.

    2001-01-01

    Dry etching of Si is critical in satisfying the demands of the micromachining industry. The micro-electro-mechanical systems (MEMS) community requires etches capable of high aspect ratios, vertical profiles, good feature size control and etch uniformity along with high throughput to satisfy production requirements. Surface technology systems' (STS's) high-density inductively coupled plasma (ICP) etch tool enables a wide range of applications to be realized whilst optimizing the above parameters. Components manufactured from Si using an STS ICP include accelerometers and gyroscopes for military, automotive and domestic applications. STS's advanced silicon etch (ASE TM ) has also allowed the first generation of MEMS-based optical switches and attenuators to reach the marketplace. In addition, a specialized application for fabricating the next generation photolithography exposure masks has been optimized for 200 mm diameter wafers, to depths of ∼750 μm. Where the profile is not critical, etch rates of greater than 8 μm min -1 have been realized to replace previous methods such as wet etching. This is also the case for printer applications. Specialized applications that require etching down to pyrex or oxide often result in the loss of feature size control at the interface; this is an industry wide problem. STS have developed a technique to address this. The rapid progression of the industry has led to development of the STS ICP etch tool, as well as the process. (author)

  10. A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

    Science.gov (United States)

    Cao, Gang; Wang, Xiaoping; Xu, Yong; Liu, Sheng

    2016-01-01

    This paper presents a piezoresistive pressure sensor with a shield layer for improved stability. Compared with the conventional piezoresistive pressure sensors, the new one reported in this paper has an n-type shield layer that covers p-type piezoresistors. This shield layer aims to minimize the impact of electrical field and reduce the temperature sensitivity of piezoresistors. The proposed sensors have been successfully fabricated by bulk-micromachining techniques. A sensitivity of 0.022 mV/V/kPa and a maximum non-linearity of 0.085% FS are obtained in a pressure range of 1 MPa. After numerical simulation, the role of the shield layer has been experimentally investigated. It is demonstrated that the shield layer is able to reduce the drift caused by electrical field and ambient temperature variation. PMID:27529254

  11. Micromachined sensor and actuator research at Sandia`s Microelectronics Development Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Smith, J.H.

    1996-11-01

    An overview of the surface micromachining program at the Microelectronics Development Laboratory of Sandia National Laboratories is presented. Development efforts are underway for a variety of surface micromachined sensors and actuators for both defense and commercial applications. A technology that embeds micromechanical devices below the surface of the wafer prior to microelectronics fabrication has been developed for integrating microelectronics with surface-micromachined micromechanical devices. The application of chemical-mechanical polishing to increase the manufacturability of micromechanical devices is also presented.

  12. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    Directory of Open Access Journals (Sweden)

    Xiaoping He

    2013-01-01

    Full Text Available Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  13. Micromachined force sensors using thin film nickel–chromium piezoresistors

    International Nuclear Information System (INIS)

    Nadvi, Gaviraj S; Butler, Donald P; Çelik-Butler, Zeynep; Gönenli, İsmail Erkin

    2012-01-01

    Micromachined force/tactile sensors using nickel–chromium piezoresistors have been investigated experimentally and through finite-element analysis. The force sensors were designed with a suspended aluminum oxide (Al 2 O 3 ) membrane and optimally placed piezoresistors to measure the strain in the membrane when deflected with an applied force. Different devices, each with varying size and shape of both the membrane and the piezoresistors, were designed, fabricated and characterized. The piezoresistors were placed into a half-Wheatstone bridge configuration with two active and two passive nickel–chromium resistors to provide temperature drift compensation. The force sensors were characterized using a load cell and a nanopositioner to measure the sensor response with applied load. Piezoresistive gauge factors in the range of 1–5.2 have been calculated for the thin film nichrome (NiCr 80/20 wt%) from the measured results. The force sensors were calculated to have a noise equivalent force of 65–245 nN. (paper)

  14. A micromachined calorimetric gas sensor: an application of electrodeposited nanostructured palladium for the detection of combustible gases.

    Science.gov (United States)

    Bartlett, Philip N; Guerin, Samuel

    2003-01-01

    Palladium films with regular nanoarchitectures were electrochemically deposited from the hexagonal (H1) lyotropic liquid crystalline phase of the nonionic surfactant octaethyleneglycol monohexadecyl ether (C16EO8) onto micromachined silicon hotplate structures. The H1-e Pd films were shown to have high surface areas (approximately 28 m2 g(-1)) and to act as effective and stable catalysts for the detection of methane in air on heating to 500 degrees C. The response of the H1-e Pd-coated planar pellistors was found to be linearly proportional to the concentration of methane between 0 and 2.5% in air with a detection limit below 0.125%. Our results show that the electrochemical deposition of nanostructured metal films offers a promising approach to the fabrication of micromachined calorimetric gas sensors for combustible gases.

  15. Monolithic integration of a micromachined piezoresistive flow sensor

    International Nuclear Information System (INIS)

    Li, Dan; Zhao, Tao; Yang, Zhenchuan; Zhang, Dacheng

    2010-01-01

    In this paper, a monolithic integrated piezoresistive flow sensor is presented, which was fabricated with an intermediate CMOS (complementary metal-oxide semiconductor) MEMS (micro electro mechanical system) process compatible with integrated pressure sensors. Four symmetrically arranged silicon diaphragms with piezoresistors on them were used to sense the drag force induced by the input gas flow. A signal conditioning CMOS circuit with a temperature compensation module was designed and fabricated simultaneously on the same chip with an increase of the total chip area by only 35%. An extra step of boron implantation and annealing was inserted into the standard CMOS process to form the piezoresistors. KOH anisotropic etching from the backside and deep reactive ion etching (DRIE) from the front side were combined to realize the silicon diaphragms. The integrated flow sensor was packaged and tested. The testing results indicated that the addition of piezoresistor formation and structure releasing did not significantly change any of the circuitry characteristics. The measured sensor output has a quadratic relation with the input flow rate of the fluid as predicted. The tested resolution of the sensor is less than 0.1 L min −1 with a measurement range of 0.1–5 L min −1 and the sensitivity is better than 40 mV per (L min −1 ) with a measurement range of 4–5 L min −1 . The measured noise floor of the sensor is 21.7 µV rtHz −1 .

  16. Micromachined thin-film sensors for SOI-CMOS co-integration

    CERN Document Server

    Laconte, Jean; Raskin, Jean-Pierre

    2006-01-01

    Co-integration of MEMS and MOS in SOI technology is promising and well demonstrated hereThe impact of Micromachining on SOI devices is deeply analyzed for the first timeInclude extensive TMAH etching, residual stress, microheaters, gas-flow sensors reviewResidual stresses in thin films need to be more and more monitored in MEMS designsTMAH micromachining is an attractive alternative to KOH.

  17. Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application

    International Nuclear Information System (INIS)

    Belwanshi, Vinod; Topkar, Anita

    2016-01-01

    Finite element analysis study has been carried out to optimize the design parameters for bulk micro-machined silicon membranes for piezoresistive pressure sensing applications. The design is targeted for measurement of pressure up to 200 bar for nuclear reactor applications. The mechanical behavior of bulk micro-machined silicon membranes in terms of deflection and stress generation has been simulated. Based on the simulation results, optimization of the membrane design parameters in terms of length, width and thickness has been carried out. Subsequent to optimization of membrane geometrical parameters, the dimensions and location of the high stress concentration region for implantation of piezoresistors have been obtained for sensing of pressure using piezoresistive sensing technique.

  18. Optimization of design parameters for bulk micromachined silicon membranes for piezoresistive pressure sensing application

    Science.gov (United States)

    Belwanshi, Vinod; Topkar, Anita

    2016-05-01

    Finite element analysis study has been carried out to optimize the design parameters for bulk micro-machined silicon membranes for piezoresistive pressure sensing applications. The design is targeted for measurement of pressure up to 200 bar for nuclear reactor applications. The mechanical behavior of bulk micro-machined silicon membranes in terms of deflection and stress generation has been simulated. Based on the simulation results, optimization of the membrane design parameters in terms of length, width and thickness has been carried out. Subsequent to optimization of membrane geometrical parameters, the dimensions and location of the high stress concentration region for implantation of piezoresistors have been obtained for sensing of pressure using piezoresistive sensing technique.

  19. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    Darbo, G.

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  20. Porous siliconformation and etching process for use in silicon micromachining

    Science.gov (United States)

    Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  1. Nickel silicide thin films as masking and structural layers for silicon bulk micro-machining by potassium hydroxide wet etching

    International Nuclear Information System (INIS)

    Bhaskaran, M; Sriram, S; Sim, L W

    2008-01-01

    This paper studies the feasibility of using titanium and nickel silicide thin films as mask materials for silicon bulk micro-machining. Thin films of nickel silicide were found to be more resistant to wet etching in potassium hydroxide. The use of nickel silicide as a structural material, by fabricating micro-beams of varying dimensions, is demonstrated. The micro-structures were realized using these thin films with wet etching using potassium hydroxide solution on (1 0 0) and (1 1 0) silicon substrates. These results show that nickel silicide is a suitable alternative to silicon nitride for silicon bulk micro-machining

  2. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  3. Silicon micromachined hollow microneedles for transdermal liquid transport

    NARCIS (Netherlands)

    Gardeniers, Johannes G.E.; Lüttge, Regina; Berenschot, Johan W.; de Boer, Meint J.; Yeshurun, Shuki Y.; Hefetz, Meir; van 't Oever, Ronny; van den Berg, Albert

    2003-01-01

    This paper presents a novel process for the fabrication of out-of-plane hollow microneedles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different,

  4. Silicon micromachined hollow microneedles for transdermal liquid transport

    NARCIS (Netherlands)

    Gardeniers, J.G.E.; Luttge, R.; Berenschot, J.W.; Boer, de M.J.; Yeshurun, S.Y.; Hefetz, M.; Oever, van't R.; Berg, van den A.

    2003-01-01

    This paper presents a novel process for the fabrication of out-of-plane hollow micro needles in silicon. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition, and allows needle shapes with different,

  5. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  6. Channeling-based collimators for generation of microbeams produced by silicon micromachining technology

    International Nuclear Information System (INIS)

    Guidi, V.; Antonini, A.; Milan, E.; Ronzoni, A.; Martinelli, G.; Biryukov, V.M.; Chesnokov, Yu.A.

    2006-01-01

    The growing interest on micro-beams in recent years and the combined development of channeling technology in high-energy physics have opened the way to new concepts for micro-beams devices. Silicon micromachining technology is here applied to manufacture micro-collimators in inexpensive and feasible ways. Both dry and wet etchings can be employed for the purpose, though the latter technique appears to be cheaper and easier. Two designs for micro-collimator devices have been considered and preliminary samples have been produced accordingly

  7. Fabrication of Micromachined SnO2 Based MOS Gas Sensor with Inbuilt Microheater for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2016-09-01

    Full Text Available This paper presents a simple method to fabricate a vertical closed membrane structured gas sensor on silicon substrate using micromachining technology for methanol detection at lower concentration. An undoped tin dioxide thin film is deposited by DC magnetron sputtering technique on a pair of gold interdigitated microelectrodes of dimension 820 µm ´ 925 µm. A meander shaped platinum micro heater of dimension 1025 µm ´ 1000 µm is incorporated to provide optimum operating temperature (about 350 0C for sensing operation. Energy dispersive X-ray spectroscopy is done to confirm the chemical composition of the sensor. Temperature coefficient of resistance of the inbuilt micro heater is found to be 0.0941 /0C. The sensor resistance shows significant change when micro heater voltage is varied from 1.5 V-3 V. I-V analysis of the sensor is carried out at 25 0C, 50 0C and 75 0C, and shifts in current through the sensor at different temperatures are observed. I-V characterization is also carried out at different methanol concentration levels (50-110 ppm and it is found that at minimum 80 ppm, the sensor exhibits promising result. The response time and recovery time of the sensor is found to be 160 s and 167 s respectively.

  8. A high-temperature silicon-on-insulator stress sensor

    International Nuclear Information System (INIS)

    Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

    2008-01-01

    A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

  9. Modeling and Experimental Study on Characterization of Micromachined Thermal Gas Inertial Sensors

    Directory of Open Access Journals (Sweden)

    Yan Su

    2010-09-01

    Full Text Available Micromachined thermal gas inertial sensors based on heat convection are novel devices that compared with conventional micromachined inertial sensors offer the advantages of simple structures, easy fabrication, high shock resistance and good reliability by virtue of using a gaseous medium instead of a mechanical proof mass as key moving and sensing elements. This paper presents an analytical modeling for a micromachined thermal gas gyroscope integrated with signal conditioning. A simplified spring-damping model is utilized to characterize the behavior of the sensor. The model relies on the use of the fluid mechanics and heat transfer fundamentals and is validated using experimental data obtained from a test-device and simulation. Furthermore, the nonideal issues of the sensor are addressed from both the theoretical and experimental points of view. The nonlinear behavior demonstrated in experimental measurements is analyzed based on the model. It is concluded that the sources of nonlinearity are mainly attributable to the variable stiffness of the sensor system and the structural asymmetry due to nonideal fabrication.

  10. Microelectronic temperature sensor; silicon temperature sensor

    International Nuclear Information System (INIS)

    Beitner, M.; Kanert, W.; Reichert, H.

    1982-01-01

    The goal of this work was to develop a silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible, for use in measurement and control. By employing the principle of spreading-resistance, using silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance less than +- 5% can be obtained; overstress tests yielded a long-term stability better than 0.2%. Some applications show the advantageous use of this sensor. (orig.) [de

  11. Frontside-micromachined planar piezoresistive vibration sensor: Evaluating performance in the low frequency test range

    Directory of Open Access Journals (Sweden)

    Lan Zhang

    2014-01-01

    Full Text Available Using a surface piezoresistor diffusion method and front-side only micromachining process, a planar piezoresistive vibration sensor was successfully developed with a simple structure, lower processing cost and fewer packaging difficulties. The vibration sensor had a large sector proof mass attached to a narrow flexure. Optimization of the boron diffusion piezoresistor placed on the edge of the narrow flexure greatly improved the sensitivity. Planar vibration sensors were fabricated and measured in order to analyze the effects of the sensor dimensions on performance, including the values of flexure width and the included angle of the sector. Sensitivities of fabricated planar sensors of 0.09–0.46 mV/V/g were measured up to a test frequency of 60 Hz. The sensor functioned at low voltages (<3 V and currents (<1 mA with a high sensitivity and low drift. At low background noise levels, the sensor had performance comparable to a commercial device.

  12. Frontside-micromachined planar piezoresistive vibration sensor: Evaluating performance in the low frequency test range

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lan; Lu, Jian, E-mail: jian-lu@aist.go.jp; Takagi, Hideki; Maeda, Ryutaro [Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564 (Japan)

    2014-01-15

    Using a surface piezoresistor diffusion method and front-side only micromachining process, a planar piezoresistive vibration sensor was successfully developed with a simple structure, lower processing cost and fewer packaging difficulties. The vibration sensor had a large sector proof mass attached to a narrow flexure. Optimization of the boron diffusion piezoresistor placed on the edge of the narrow flexure greatly improved the sensitivity. Planar vibration sensors were fabricated and measured in order to analyze the effects of the sensor dimensions on performance, including the values of flexure width and the included angle of the sector. Sensitivities of fabricated planar sensors of 0.09–0.46 mV/V/g were measured up to a test frequency of 60 Hz. The sensor functioned at low voltages (<3 V) and currents (<1 mA) with a high sensitivity and low drift. At low background noise levels, the sensor had performance comparable to a commercial device.

  13. Micro-machinable polymer-derived ceramic sensors for high-temperature applications

    Science.gov (United States)

    Liu, Jian; Xu, Chengying; An, Linan

    2010-04-01

    Micro-sensors are highly desired for on-line temperature/pressure monitoring in turbine engines to improve their efficiency and reduce pollution. The biggest challenge for developing this type of sensors is that the sensors have to sustain at extreme environments in turbine engine environments, such as high-temperatures (>800 °C), fluctuated pressure and oxidation/corrosion surroundings. In this paper, we describe a class of sensors made of polymer-derived ceramics (PDCs) for such applications. PDCs have the following advantages over conventional ceramics, making them particularly suitable for these applications: (i) micromachining capability, (ii) tunable electric properties, and (iii) hightemperature capability. Here, we will discuss the materials and their properties in terms of their applications for hightemperature micro-sensors, and microfabrication technologies. In addition, we will also discuss the design of a heat-flux sensor based on polymer-derived ceramics.

  14. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  15. Touch mode micromachined capacitive pressure sensor with signal conditioning electronics

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio; Eriksen, Gert F.; Christensen, Carsten

    2010-01-01

    In the last decades, pressure sensors have been one of the greatest successes of the MEMS industry. Many companies are using them in a variety of applications from the automotive to the environmental field. Currently piezoresistive pressure sensors are the most developed, and a well established t...

  16. Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

    Science.gov (United States)

    Papapolymerou, Ioannis John

    2004-01-01

    A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

  17. Micromachined High-Temperature Sensors for Planet Exploration, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In phase I of the SBIR program, LEEOAT Company will develop, simulate, fabricate and test high-temperature piezoelectric miniature sensors (up to 800oC), for...

  18. Porous Silicon Sensors- Elusive and Erudite

    OpenAIRE

    H. Saha, Prof.

    2017-01-01

    Porous Silicon Sensors have been fabricated and tested successfully over the last few years as humidity sensors, vapour sensors, gas sensors, piezoresistive pressure sensors and bio- sensors. In each case it has displayed remarkably sensitivity, relatively low temperature operation and ease of fabrication. Brief description of fabrication and properties of all these types of different sensors is reported in this paper. The barriers of porous silicon like contact, non- uniformity, instability ...

  19. Micromachined capacitive pressure sensor with signal conditioning electronics

    DEFF Research Database (Denmark)

    Fragiacomo, Giulio

    signal) of the device. Fusion bonding of two wafers has been used in order to obtain the cavities, this is also the only non-standard cleanroom process involved in the fabrication of the transducers. The device developed can measure absolute pressures from 0 to 10 bar with sensitivity up to 80 p...... characterized and presented at Grundfos Direct Sensors A/S and constitute the preliminary work for a new product which is intended target the low power or wireless pressure sensor for harsh environment market....

  20. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  1. Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications

    Science.gov (United States)

    Zhang, Ping

    Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components. An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy

  2. Micromachined silicon acoustic delay line with improved structural stability and acoustic directivity for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Young; Kumar, Akhil; Xu, Song; Zou, Jun

    2017-03-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. However, as its length increases to provide longer delay time, the delay line becomes more vulnerable to structural instability due to reduced mechanical stiffness. In addition, the small cross-section area of the delay line results in a large acoustic acceptance angle and therefore poor directivity. To address these two issues, this paper reports the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, a new tapered design for the input terminal of the delay line was also investigate to improve its acoustic directivity by reducing the acoustic acceptance angle. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

  3. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

    Directory of Open Access Journals (Sweden)

    M. Cihan Çakır

    2016-09-01

    Full Text Available Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption–dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  4. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.

    Science.gov (United States)

    Çakır, M Cihan; Çalışkan, Deniz; Bütün, Bayram; Özbay, Ekmel

    2016-09-29

    Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption-dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  5. Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Fung, S.; Wang, Q.; Horsley, D. A. [Berkeley Sensor and Actuator Center, University of California, Davis, 1 Shields Avenue, Davis, California 95616 (United States); Tang, H.; Boser, B. E. [Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720 (United States); Tsai, J. M.; Daneman, M. [InvenSense, Inc., 1745 Technology Drive, San Jose, California 95110 (United States)

    2015-06-29

    This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

  6. A 16-bit sigma-delta modulator applied in micro-machined inertial sensors

    Science.gov (United States)

    Honglin, Xu; Qiang, Fu; Hongna, Liu; Liang, Yin; Pengfei, Wang; Xiaowei, Liu

    2014-04-01

    A fourth-order low-distortion low-pass sigma-delta (ΣΔ) modulator is presented for micro-machined inertial sensors. The proposed single-loop single-bit feedback modulator is optimized with a feed-forward path to decrease the nonlinearities and power consumption. The IC is implemented in a standard 0.6 μm CMOS technology and operates at a sampling frequency of 3.846 MHz. The chip area is 2.12 mm2 with 23 pads. The experimental results indicate a signal-to-noise ratio (SNR) of 100 dB and dynamic range (DR) of 103 dB at an oversampling rate (OSR) of 128 with the input signal amplitude of -3.88 dBFS at 9.8 kHz; the power consumption is 15 mW at a 5 V supply.

  7. A 16-bit sigma–delta modulator applied in micro-machined inertial sensors

    International Nuclear Information System (INIS)

    Xu Honglin; Fu Qiang; Liu Hongna; Yin Liang; Wang Pengfei; Liu Xiaowei

    2014-01-01

    A fourth-order low-distortion low-pass sigma–delta (ΣΔ) modulator is presented for micro-machined inertial sensors. The proposed single-loop single-bit feedback modulator is optimized with a feed-forward path to decrease the nonlinearities and power consumption. The IC is implemented in a standard 0.6 μm CMOS technology and operates at a sampling frequency of 3.846 MHz. The chip area is 2.12 mm 2 with 23 pads. The experimental results indicate a signal-to-noise ratio (SNR) of 100 dB and dynamic range (DR) of 103 dB at an oversampling rate (OSR) of 128 with the input signal amplitude of −3.88 dBFS at 9.8 kHz; the power consumption is 15 mW at a 5 V supply. (semiconductor integrated circuits)

  8. Si Micro-turbine by Proton BeamWriting and Porous Silicon Micromachining

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.; Fekete, Z.

    2008-01-01

    aspect ratio, completely or partially released microelements embedded in a cavity or a channel, thereby enabling us to form mobile components in the microfluidic MEMS. Although the process opens a new way in micromachining, the widening of the implanted regions around the projected range limits the dimensions and the geometry of the processed devices. The described technique can be exploited in fabrication of various MEMS with embedded mobile elements. This work is the first demonstration of a silicon device containing a moving part made by proton beam writing. Acknowledgements The support of the Hungarian National Research Found (OTKA) via grants T047002, A080, M041939, M36324 and F042474; and EU co-funded Economic Competitiveness Operative Programme (GVOP-3.2.1.-2004-04-0402/3.0) is gratefully acknowledged. The authors also thank the contribution of Dr. A.L. Toth with SEM analysis and Mr. B. Forgacs with design and fabrication of plastic encapsulation of the microturbine chip

  9. Development of optical interference-type micro accelerometer for subsurface microseismic measurement; Micromachining ni yoru chika danseiha keisoku no tame no hikari kanshogata kasokudo sensor no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Hirata, K; Niitsuma, H; Esashi, M [Tohoku University, Sendai (Japan). Faculty of Engineering

    1997-10-22

    Manufacture is under way of an optical interference-type micro accelerometer making use of the micromachining technology and an optical fiber measuring system for detecting microseismic waves in the ground. The sensor is required to be capable of detecting acceleration 0.1-1gal in amplitude, to be flat in amplitude characteristic in a frequency range of 10Hz-several kHz, to be ensured of straight phase characteristics to enable the measurement of transient phenomena, to be low in cross sensitivity, and to be high in resistance to water, pressure, and heat. The sensor is constructed in the following way. In the process for treating silicon, anisotropic etching is performed for the formation of a gap between the fiber end face and oscillator, boron is diffused, a stopper is formed, and then the silicon is subjected to penetrating etching. In the process for the optical fiber section, an optical fiber is inserted into a glass tube and fixed by an adhesive agent, and then the glass tube end face is polished, this together with the fiber end. Indium-tin oxide is sputtered onto the glass tube end. Finally, the sensor is assembled. 5 refs., 4 figs., 1 tab.

  10. Sensors for ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

    2014-11-21

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

  11. Sensors for ultra-fast silicon detectors

    International Nuclear Information System (INIS)

    Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

    2014-01-01

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

  12. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    Science.gov (United States)

    Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

    2016-02-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

  13. Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

    International Nuclear Information System (INIS)

    Cho, Y; Chang, C-C; Zou, J; Wang, L V

    2016-01-01

    This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT. (paper)

  14. A probe station for testing silicon sensors

    CERN Multimedia

    Ulysse, Fichet

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  15. Microfabricated Ice-Detection Sensor

    National Research Council Canada - National Science Library

    DeAnna, Russell

    1997-01-01

    .... The sensor is capable of distinguishing between an ice covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometers thick, boron doped, silicon diaphragm which serves as one plate of a parallel plate capacitor...

  16. Micro-machined resonator oscillator

    Science.gov (United States)

    Koehler, Dale R.; Sniegowski, Jeffry J.; Bivens, Hugh M.; Wessendorf, Kurt O.

    1994-01-01

    A micro-miniature resonator-oscillator is disclosed. Due to the miniaturization of the resonator-oscillator, oscillation frequencies of one MHz and higher are utilized. A thickness-mode quartz resonator housed in a micro-machined silicon package and operated as a "telemetered sensor beacon" that is, a digital, self-powered, remote, parameter measuring-transmitter in the FM-band. The resonator design uses trapped energy principles and temperature dependence methodology through crystal orientation control, with operation in the 20-100 MHz range. High volume batch-processing manufacturing is utilized, with package and resonator assembly at the wafer level. Unique design features include squeeze-film damping for robust vibration and shock performance, capacitive coupling through micro-machined diaphragms allowing resonator excitation at the package exterior, circuit integration and extremely small (0.1 in. square) dimensioning. A family of micro-miniature sensor beacons is also disclosed with widespread applications as bio-medical sensors, vehicle status monitors and high-volume animal identification and health sensors. The sensor family allows measurement of temperatures, chemicals, acceleration and pressure. A microphone and clock realization is also available.

  17. Gaseous slip flow analysis of a micromachined flow sensor for ultra small flow applications

    Science.gov (United States)

    Jang, Jaesung; Wereley, Steven T.

    2007-02-01

    The velocity slip of a fluid at a wall is one of the most typical phenomena in microscale gas flows. This paper presents a flow analysis considering the velocity slip in a capacitive micro gas flow sensor based on pressure difference measurements along a microchannel. The tangential momentum accommodation coefficient (TMAC) measurements of a particular channel wall in planar microchannels will be presented while the previous micro gas flow studies have been based on the same TMACs on both walls. The sensors consist of a pair of capacitive pressure sensors, inlet/outlet and a microchannel. The main microchannel is 128.0 µm wide, 4.64 µm deep and 5680 µm long, and operated under nearly atmospheric conditions where the outlet Knudsen number is 0.0137. The sensor was fabricated using silicon wet etching, ultrasonic drilling, deep reactive ion etching (DRIE) and anodic bonding. The capacitance change of the sensor and the mass flow rate of nitrogen were measured as the inlet-to-outlet pressure ratio was varied from 1.00 to 1.24. The measured maximum mass flow rate was 3.86 × 10-10 kg s-1 (0.019 sccm) at the highest pressure ratio tested. As the pressure difference increased, both the capacitance of the differential pressure sensor and the flow rate through the main microchannel increased. The laminar friction constant f sdot Re, an important consideration in sensor design, varied from the incompressible no-slip case and the mass sensitivity and resolution of this sensor were discussed. Using the current slip flow formulae, a microchannel with much smaller mass flow rates can be designed at the same pressure ratios.

  18. Modeling, Fabrication and Testing of a Customizable Micromachined Hotplate for Sensor Applications.

    Science.gov (United States)

    Tommasi, Alessio; Cocuzza, Matteo; Perrone, Denis; Pirri, Candido Fabrizio; Mosca, Roberto; Villani, Marco; Delmonte, Nicola; Zappettini, Andrea; Calestani, Davide; Marasso, Simone Luigi

    2016-12-30

    In the sensors field the active sensing material frequently needs a controlled temperature in order to work properly. In microsystems technology, micro-machined hotplates represent a platform consisting of a thin suspended membrane where the sensing material can be deposited, usually integrating electrical stimuli and temperature readout. The micro-hotplate ensures a series of advantages such as miniaturized size, fast response, high sensitivity, low power consumption and selectivity for chemical sensing. This work compares the coplanar and the buried approach for the micro-hotplate heaters design with the aim to optimize the fabrication process and to propose a guideline for the choice of the suitable design with respect to the applications. In particular, robust Finite Element Method (FEM) models are set up in order to predict the electrical and thermal behavior of the micro-hotplates. The multiphysics approach used for the simulation allows to match as close as possible the actual device to the predictive model: geometries, materials, physics have been carefully linked to the fabricated devices to obtain the best possible accuracy. The materials involved in the fabrication process are accurately selected in order to improve the yield of the process and the performance of the devices. The fabricated micro-hotplates are able to warm the active region up to 400 °C (with a corresponding power consumption equal to 250 mW @ 400 °C) with a uniform temperature distribution in the buried micro-hotplate and a controlled temperature gradient in the coplanar one. A response time of about 70 ms was obtained on the virtual model, which perfectly agrees with the one measured on the fabricated device. Besides morphological, electrical and thermal characterizations, this work includes reliability tests in static and dynamic modes.

  19. Modeling, Fabrication and Testing of a Customizable Micromachined Hotplate for Sensor Applications

    Directory of Open Access Journals (Sweden)

    Alessio Tommasi

    2016-12-01

    Full Text Available In the sensors field the active sensing material frequently needs a controlled temperature in order to work properly. In microsystems technology, micro-machined hotplates represent a platform consisting of a thin suspended membrane where the sensing material can be deposited, usually integrating electrical stimuli and temperature readout. The micro-hotplate ensures a series of advantages such as miniaturized size, fast response, high sensitivity, low power consumption and selectivity for chemical sensing. This work compares the coplanar and the buried approach for the micro-hotplate heaters design with the aim to optimize the fabrication process and to propose a guideline for the choice of the suitable design with respect to the applications. In particular, robust Finite Element Method (FEM models are set up in order to predict the electrical and thermal behavior of the micro-hotplates. The multiphysics approach used for the simulation allows to match as close as possible the actual device to the predictive model: geometries, materials, physics have been carefully linked to the fabricated devices to obtain the best possible accuracy. The materials involved in the fabrication process are accurately selected in order to improve the yield of the process and the performance of the devices. The fabricated micro-hotplates are able to warm the active region up to 400 °C (with a corresponding power consumption equal to 250 mW @ 400 °C with a uniform temperature distribution in the buried micro-hotplate and a controlled temperature gradient in the coplanar one. A response time of about 70 ms was obtained on the virtual model, which perfectly agrees with the one measured on the fabricated device. Besides morphological, electrical and thermal characterizations, this work includes reliability tests in static and dynamic modes.

  20. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  1. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  2. Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

    International Nuclear Information System (INIS)

    Cho, Y; Kumar, A; Xu, S; Zou, J

    2016-01-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays. (paper)

  3. Demonstration of robust micromachined jet technology and its application to realistic flow control problems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Sung Pil [Inha University, Incheon (Korea, Republic of)

    2006-04-15

    This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies.

  4. Demonstration of robust micromachined jet technology and its application to realistic flow control problems

    International Nuclear Information System (INIS)

    Chang, Sung Pil

    2006-01-01

    This paper describes the demonstration of successful fabrication and initial characterization of micromachined pressure sensors and micromachined jets (microjets) fabricated for use in macro flow control and other applications. In this work, the microfabrication technology was investigated to create a micromachined fluidic control system with a goal of application in practical fluids problems, such as UAV (Unmanned Aerial Vehicle)-scale aerodynamic control. Approaches of this work include : (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow ; and (2) a non-silicon alternative micromachining fabrication technology based on metallic substrates and lamination (in addition to traditional MEMS technologies) which will allow the realization of larger scale, more robust structures and larger array active areas for fluidic systems. As an initial study, an array of MEMS pressure sensors and an array of MEMS modulators for orifice-based control of microjets have been fabricated, and characterized. Both pressure sensors and modulators have been built using stainless steel as a substrate and a combination of lamination and traditional micromachining processes as fabrication technologies

  5. Porous Silicon Structures as Optical Gas Sensors.

    Science.gov (United States)

    Levitsky, Igor A

    2015-08-14

    We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi) and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers) are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  6. Femtosecond laser micromachining of polylactic acid/graphene composites for designing interdigitated microelectrodes for sensor applications

    Science.gov (United States)

    Paula, Kelly T.; Gaál, Gabriel; Almeida, G. F. B.; Andrade, M. B.; Facure, Murilo H. M.; Correa, Daniel S.; Riul, Antonio; Rodrigues, Varlei; Mendonça, Cleber R.

    2018-05-01

    There is an increasing interest in the last years towards electronic applications of graphene-based materials and devices fabricated from patterning techniques, with the ultimate goal of high performance and temporal resolution. Laser micromachining using femtosecond pulses is an attractive methodology to integrate graphene-based materials into functional devices as it allows changes to the focal volume with a submicrometer spatial resolution due to the efficient nonlinear nature of the absorption, yielding rapid prototyping for innovative applications. We present here the patterning of PLA-graphene films spin-coated on a glass substrate using a fs-laser at moderate pulse energies to fabricate interdigitated electrodes having a minimum spatial resolution of 5 μm. Raman spectroscopy of the PLA-graphene films indicated the presence of multilayered graphene fibers. Subsequently, the PLA-graphene films were micromachined using a femtosecond laser oscillator delivering 50-fs pulses and 800 nm, where the pulse energy and scanning speed was varied in order to determine the optimum irradiation parameters (16 nJ and 100 μm/s) to the fabrication of microstructures. The micromachined patterns were characterized by optical microscopy and submitted to electrical measurements in liquid samples, clearly distinguishing all tastes tested. Our results confirm the femtosecond laser micromachining technique as an interesting approach to efficiently pattern PLA-graphene filaments with high precision and minimal mechanical defects, allowing the easy fabrication of interdigitated structures and an alternative method to those produced by conventional photolithography.

  7. Femtosecond laser micromachining of compound parabolic concentrator fiber tipped glucose sensors

    DEFF Research Database (Denmark)

    Hassan, Hafeez Ul; Lacraz, Amédée; Kalli, Kyriacos

    2017-01-01

    We report on highly accurate femtosecond (fs) laser micromachining of a compound parabolic concentrator (CPC) fiber tip on a polymer optical fiber (POF). The accuracy is reflected in an unprecedented correspondence between the numerically predicted and experimentally found improvement in fluoresc...

  8. Fabrication of 3D Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

    2012-06-06

    Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

  9. Thermal flow micro sensors

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1999-01-01

    A review is given on sensors fabricated by silicon micromachining technology using the thermal domain for the measurement of fluid flow. Attention is paid especially to performance and geometry of the sensors. Three basic types of thermal flow sensors are discussed: anemometers, calorimetric flow

  10. An In-depth Study on Semitransparent amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Fernandez, M. G.; Ferrando, A.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Rodrigo, T.; Vila, I.; Virto, A. L.

    1999-01-01

    Semitransparent amorphous silicon sensors have been proposed as the 2D positioning sensors for the link system of the CMS alignment: An in-depth study of the actual performance of these sensors is here reported. (Author) 8 refs

  11. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  12. Piezoresistive silicon pressure sensors in cryogenic environment

    Science.gov (United States)

    Kahng, Seun K.; Chapman, John J.

    1989-01-01

    This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

  13. Optical temperature sensor and thermal expansion measurement using a femtosecond micromachined grating in 6H-SiC.

    Science.gov (United States)

    DesAutels, G Logan; Powers, Peter; Brewer, Chris; Walker, Mark; Burky, Mark; Anderson, Gregg

    2008-07-20

    An optical temperature sensor was created using a femtosecond micromachined diffraction grating inside transparent bulk 6H-SiC, and to the best of our knowledge, this is a novel technique of measuring temperature. Other methods of measuring temperature using fiber Bragg gratings have been devised by other groups such as Zhang and Kahrizi [in MEMS, NANO, and Smart Systems (IEEE, 2005)]. This temperature sensor was, to the best of our knowledge, also used for a novel method of measuring the linear and nonlinear coefficients of the thermal expansion of transparent and nontransparent materials by means of the grating first-order diffracted beam. Furthermore the coefficient of thermal expansion of 6H-SiC was measured using this new technique. A He-Ne laser beam was used with the SiC grating to produce a first-order diffracted beam where the change in deflection height was measured as a function of temperature. The grating was micromachined with a 20 microm spacing and has dimensions of approximately 500 microm x 500 microm (l x w) and is roughly 0.5 microm deep into the 6H-SiC bulk. A minimum temperature of 26.7 degrees C and a maximum temperature of 399 degrees C were measured, which gives a DeltaT of 372.3 degrees C. The sensitivity of the technique is DeltaT=5 degrees C. A maximum deflection angle of 1.81 degrees was measured in the first-order diffracted beam. The trend of the deflection with increasing temperature is a nonlinear polynomial of the second-order. This optical SiC thermal sensor has many high-temperature electronic applications such as aircraft turbine and gas tank monitoring for commercial and military applications.

  14. A batch process micromachined thermoelectric energy harvester: fabrication and characterization

    International Nuclear Information System (INIS)

    Su, J; Goedbloed, M; Van Andel, Y; De Nooijer, M C; Elfrink, R; Wang, Z; Vullers, R J M; Leonov, V

    2010-01-01

    Micromachined thermopiles are considered as a cost-effective solution for energy harvesters working at a small temperature difference and weak heat flows typical for, e.g., the human body. They can be used for powering autonomous wireless sensor nodes in a body area network. In this paper, a micromachined thermoelectric energy harvester with 6 µm high polycrystalline silicon germanium (poly-SiGe) thermocouples fabricated on a 6 inch wafer is presented. An open circuit voltage of 1.49 V and an output power of 0.4 µW can be generated with 3.5 K temperature difference in a model of a wearable micromachined energy harvester of the discussed design, which has a die size of 1.0 mm × 2.5 mm inside a watch-size generator

  15. A Micromachined Capacitive Pressure Sensor Using a Cavity-Less Structure with Bulk-Metal/Elastomer Layers and Its Wireless Telemetry Application

    Directory of Open Access Journals (Sweden)

    Yogesh B. Gianchandani

    2008-04-01

    Full Text Available This paper reports a micromachined capacitive pressure sensor intended for applications that require mechanical robustness. The device is constructed with two micromachined metal plates and an intermediate polymer layer that is soft enough to deform in a target pressure range. The plates are formed of micromachined stainless steel fabricated by batch-compatible micro-electro-discharge machining. A polyurethane roomtemperature- vulcanizing liquid rubber of 38-μm thickness is used as the deformable material. This structure eliminates both the vacuum cavity and the associated lead transfer challenges common to micromachined capacitive pressure sensors. For frequency-based interrogation of the capacitance, passive inductor-capacitor tanks are fabricated by combining the capacitive sensor with an inductive coil. The coil has 40 turns of a 127-μmdiameter copper wire. Wireless sensing is demonstrated in liquid by monitoring the variation in the resonant frequency of the tank via an external coil that is magnetically coupled with the tank. The sensitivity at room temperature is measured to be 23-33 ppm/KPa over a dynamic range of 340 KPa, which is shown to match a theoretical estimation. Temperature dependence of the tank is experimentally evaluated.

  16. Silicon sensor technologies for ATLAS IBL upgrade

    CERN Document Server

    Grenier, P; The ATLAS collaboration

    2011-01-01

    New pixel sensors are currently under development for ATLAS Upgrades. The first upgrade stage will consist in the construction of a new pixel layer that will be installed in the detector during the 2013 LHC shutdown. The new layer (Insertable-B-Layer, IBL) will be inserted between the inner most layer of the current pixel detector and the beam pipe at a radius of 3.2cm. The expected high radiation levels require the use of radiation hard technology for both the front-end chip and the sensor. Two different pixel sensor technologies are envisaged for the IBL. The sensor choice will occur in July 2011. One option is developed by the ATLAS Planar Pixel Sensor (PPS) Collaboration and is based on classical n-in-n planar silicon sensors which have been used for the ATLAS Pixel detector. For the IBL, two changes were required: The thickness was reduced from 250 um to 200 um to improve the radiation hardness. In addition, so-called "slim edges" were designed to reduce the inactive edge of the sensors from 1100 um to o...

  17. Surface effects in segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis

    2017-05-15

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

  18. Surface effects in segmented silicon sensors

    International Nuclear Information System (INIS)

    Kopsalis, Ioannis

    2017-05-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

  19. Porous Silicon Structures as Optical Gas Sensors

    Directory of Open Access Journals (Sweden)

    Igor A. Levitsky

    2015-08-01

    Full Text Available We present a short review of recent progress in the field of optical gas sensors based on porous silicon (PSi and PSi composites, which are separate from PSi optochemical and biological sensors for a liquid medium. Different periodical and nonperiodical PSi photonic structures (bares, modified by functional groups or infiltrated with sensory polymers are described for gas sensing with an emphasis on the device specificity, sensitivity and stability to the environment. Special attention is paid to multiparametric sensing and sensor array platforms as effective trends for the improvement of analyte classification and quantification. Mechanisms of gas physical and chemical sorption inside PSi mesopores and pores of PSi functional composites are discussed.

  20. A Novel Piezo-Actuator-Sensor Micromachine for Mechanical Characterization of Micro-Specimens

    Directory of Open Access Journals (Sweden)

    Leila Ladani

    2010-12-01

    Full Text Available Difficulties associated with testing and characterization of materials at microscale demands for new technologies and devices that are capable of measuring forces and strains at microscale. To address this issue, a novel electroactive-based micro-electro-mechanical machine is designed. The micromachine is comprised of two electroactive (piezoelectric micro-elements mounted on a rigid frame. Electrical activation of one of the elements causes it to expand and induce a stress in the intervening micro-specimen. The response of the microspecimen to the stress is measured by the deformation and thereby voltage/resistance induced in the second electro-active element. The concept is theoretically proven using analytical modeling in conjunction with non-linear, three dimensional finite element analyses for the micromachine. Correlation of the output voltage to the specimen stiffness is shown. It is also demonstrated through finite element and analytical analysis that this technique is capable of detecting non-linear behavior of materials. A characteristic curve for an isotropic specimen exhibiting linear elastic behavior is developed. Application of the proposed device in measuring coefficient of thermal expansion is explored and analytical analysis is conducted.

  1. Electron beam irradiation of porous silicon for application in micromachining and sensing

    International Nuclear Information System (INIS)

    Borini, S.; Rocchia, M.; Rossi, A.M.; Boarino, L.; Amato, G.

    2005-01-01

    We have studied the effect of the electron beam (EB) irradiation on porous silicon (PS), in order to find new possibilities for the local modification of the material at the submicrometer scale. The interaction between the accelerated electrons and PS has been investigated by means of two main techniques: infrared spectroscopy and profilometric measurements. All the results show that a strong increase of reactivity is induced on PS surface under exposure to the EB, due to the hydrogen desorption provoked by the incident electrons. We demonstrate that this phenomenon can be exploited for both the lateral structuring and the local functionalization of PS, at the submicrometer scale, depending on the different treatments applied to the samples after the EB bombardment. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. A 850 GHz SIS receiver employing silicon micro-machining technology

    Science.gov (United States)

    Kooi, J. W.; Pety, J.; Schaffer, P. L.; Phillips, T. G.; Bumble, B.; LeDuc, H. G.; Walker, C. K.

    1996-01-01

    A 850 GHz superconductor-insulator-superconductor (SIS) heterodyne receiver which uses a radiofrequency tuned niobium tunnel junction fabricated on a 1 micron thick silicon nitrate membrane, is reported. From video and heterodyne measurements, it was calculated that the niobium film loss in the radiofrequency matching network is about 6.8 dB at 822 GHz. These results are approximately a factor of two higher than the theoretical loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. The junction design and the receiver configuration are described, including the mixer block, the membrane construction and the cooled optics. The performance tests using a Fourier transform spectrometer to measure the response of the radiofrequency matching network, and the SIS simulations of the receiver response to cold and hot loads, the infrared noise contribution and the overall mixer conversion efficiency, are reported. It is concluded that the receiver response is limited by the absorption loss in the radiofrequency matching network.

  3. Simultaneous measurements of thermal conductivity and electrical conductivity of micro-machined Silicon films

    International Nuclear Information System (INIS)

    Hagino, H; Kawahara, Y; Goto, A; Miyazaki, K

    2012-01-01

    The in-plane effective thermal conductivity of free-standing Si thin films with periodic micropores was measured at -100 to 0 °C. The Si thin films with micropores were prepared from silicon-on-insulator (SOI) wafers by standard microfabrication processes. The dimensions of the free-standing Si thin films were 200μm×150μm×2 μm, with staggered 4 μm pores having an average pitch of 4 mm. The Si thin film serves both as a heater and thermometer. The average temperature rise of the thin film is a function of its in-plane thermal conductivity. The effective thermal conductivity was calculated using a simple one-dimensional heat conduction model. The measured thermal conductivity was much lower than that expected based on classical model evaluations. A significant phonon size effect was observed even in the microsized structures, and the mean free path for phonons is very long even at the room temperature.

  4. Removal of endotoxin from deionized water using micromachined silicon nanopore membranes

    International Nuclear Information System (INIS)

    Smith, Ross A; Fissell, William H; Fleischman, Aaron J; Roy, Shuvo; Goldman, Ken; Zorman, Christian A

    2011-01-01

    Endotoxins are lipopolysaccharide components of the cell membrane of Gram-negative bacteria that trigger the body's innate immune system and can cause shock and death. Water for medical therapy, including parenteral and dialysate solutions, must be free of endotoxin. This purity is challenging to achieve as many Gram-negative bacteria are endemic in the environment, and can thrive in harsh, nutrient-poor conditions. Current methods for removing endotoxin include distillation and reverse osmosis, both of which are resource intensive processes. Membranes that present an absolute barrier to macromolecular passage may be capable of delivering pure water for biomedical applications. In this work, endotoxin has been filtered from aqueous solutions using silicon nanopore membranes (SNMs) with monodisperse pore size distributions. SNMs with critical pore sizes between 26 and 49 nm were challenged with solutions of deionized water spiked with endotoxin and with Pseudomonas cepacia. The filtrate produced by the SNM from Pseudomonas-contaminated water had <1.0 endotoxin unit (EU) ml −1 , which meets standards for dialysate purity. This approach suggests a technique for single-step cleanup of heavily contaminated water that may be suitable for field or clinical use

  5. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    International Nuclear Information System (INIS)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-01-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

  6. Nano-g Micromachined Inertial Sensors with Low Payload Impact, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiant Acoustics' patented technology for micro-interferometry enables a nano-g intertial sensor for NASA's emerging needs. The proposed sensor system is 1000x more...

  7. A Reuse Evaluation for Solar-Cell Silicon Wafers via Shift Revolution and Tool Rotation Using Magnetic Assistance in Ultrasonic Electrochemical Micromachining

    Directory of Open Access Journals (Sweden)

    P. S. Pa

    2013-01-01

    Full Text Available A new reuse fabrication using a tool module with rotation and revolution through a process of magnetic assistance in ultrasonic electrochemical micromachining (UEMM for removal of the surface layers from silicon wafers of solar cells is demonstrated. The target of the proposed reuse fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach to removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. The high revolution speed of the shift with the high rotation speed of the designed tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. High frequency and high power of ultrasonic with large electrolyte flow rate and high magnetic strengths with a small distance between the two magnets provide a large discharge effect and good removal; only a short period of time is required to remove the epoxy film and Si3N4 layer easily and cleanly.

  8. A novel measurement method for the thermal properties of liquids by utilizing a bridge-based micromachined sensor

    International Nuclear Information System (INIS)

    Beigelbeck, Roman; Nachtnebel, Herbert; Kohl, Franz; Jakoby, Bernhard

    2011-01-01

    In recent decades, the demands for online monitoring of liquids in various applications have increased significantly. In this context, the sensing of the thermal transport parameters of liquids (i.e. thermal conductivity and diffusivity) may be an interesting alternative to well-established monitoring parameters like permittivity, mass density or shear viscosity. We developed a micromachined thermal property sensor, applicable to non-flowing liquids, featuring three in parallel microbridges, which carry either a heater or one of in total two thermistors. Its active sensing region was designed to achieve almost negligible spurious thermal shunts between heater and thermistors. This enables the adoption of a simple two-dimensional model to describe the heat transfer from the heater to the thermistors, which is mainly governed by the thermal properties of the sample liquid. Founded on this theoretical model, a novel measurement method for the thermal parameters was devised that relies solely on the frequency response of the measured peak temperature and allows simultaneous extraction of the thermal conductivity and diffusivity of liquids. In this contribution, we describe the device prototype, the model, the deduced measurement method and the experimental verification by means of test measurements carried out on five sample liquids

  9. Highly sensitive micromachined capacitive pressure sensor with reduced hysteresis and low parasitic capacitance

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Fragiacomo, Giulio; Hansen, Ole

    2009-01-01

    This paper describes the design and fabrication of a capacitive pressure sensor that has a large capacitance signal and a high sensitivity of 76 pF/bar in touch mode operation. Due to the large signal, problems with parasitic capacitances are avoided and hence it is possible to integrate the sensor...... bonding to create vacuum cavities. The exposed part of the sensor is perfectly flat such that it can be coated with corrosion resistant thin films. Hysteresis is an inherent problem in touch mode capacitive pressure sensors and a technique to significantly reduce it is presented....... with a discrete components electronics circuit for signal conditioning. Using an AC bridge electronics circuit a resolution of 8 mV/mbar is achieved. The large signal is obtained due to a novel membrane structure utilizing closely packed hexagonal elements. The sensor is fabricated in a process based on fusion...

  10. Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    1999-12-01

    Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

  11. A 35 GHz wireless millimeter-wave power sensor based on GaAs micromachining technology

    International Nuclear Information System (INIS)

    Wang, De-bo; Liao, Xiao-ping

    2012-01-01

    A novel MEMS wireless millimeter-wave power sensor based on GaAs MMIC technology is presented in this paper. The principle of this wireless millimeter-wave power sensor is explained. It is designed and fabricated using MEMS technology and the GaAs MMIC process. With the millimeter-wave power range from 0.1 to 80 mW, the sensitivity of the wireless millimeter-wave power sensor is about 0.246 mV mW −1 at 35 GHz. In order to verify the power detection capability, this wireless power sensor is mounted on a PCB which influences the microwave performance of the CPW-fed antenna including the return loss and the radiation pattern. The frequency-dependent characteristic and the degree-dependent characteristic of this wireless power sensor are researched. Furthermore, in addition to the combination of the advantages of CPW-fed antenna with the advantages of the thermoelectric power sensor, another significant advantage of this wireless millimeter-wave power sensor is that it can be integrated with MMICs and other planar connecting circuit structures with zero dc power consumption. These features make it suitable for various applications ranging from the environment or space radiation detection systems to radar receiver and transmitter systems. (paper)

  12. Environmental sensors based on micromachined cantilevers with integrated read-out

    DEFF Research Database (Denmark)

    Boisen, Anja; Thaysen, Jacob; Jensenius, Henriette

    2000-01-01

    -out facilitates measurements in liquid. The probe has been successfully implemented in gaseous as well as in liquid experiments. For example, the probe has been used as an accurate and minute thermal sensor and as a humidity sensor. In liquid, the probe has been used to detect the presence of alcohol in water. (C......An AFM probe with integrated piezoresistive read-out has been developed and applied as a cantilever-based environmental sensor. The probe has a built-in reference cantilever, which makes it possible to subtract background drift directly in the measurement. Moreover, the integrated read...

  13. A micromachined inline type microwave power sensor with working state transfer switches

    International Nuclear Information System (INIS)

    Han Lei

    2011-01-01

    A wideband 8-12 GHz inline type microwave power sensor, which has both working and non-working states, is presented. The power sensor measures the microwave power coupled from a CPW line by a MEMS membrane. In order to reduce microwave losses during the non-working state, a new structure of working state transfer switches is proposed to realize the two working states. The fabrication of the power sensor with two working states is compatible with the GaAs MMIC (monolithic microwave integrated circuit) process. The experimental results show that the power sensor has an insertion loss of 0.18 dB during the non-working state and 0.24 dB during the working state at a frequency of 10 GHz. This means that no microwave power has been coupled from the CPW line during the non-working state. (semiconductor integrated circuits)

  14. A micromachined electrochemical sensor for free chlorine monitoring in drinking water.

    Science.gov (United States)

    Mehta, A; Shekhar, H; Hyun, S H; Hong, S; Cho, H J

    2006-01-01

    In this work, we designed, fabricated and tested a disposable, flow-through amperometric sensor for free chlorine determination in water. The sensor is based on the principle of an electrochemical cell. The substrate, as well as the top microfluidic layer, is made up of a polymer material. The advantages include; (a) disposability from low cost; (b) stable operation range from three-electrode design; (c) fluidic interconnections that provide on line testing capabilities; and (d) transparent substrate which provides for future integration of on-chip optics. The sensor showed a good response and linearity in the chlorine concentration ranging from 0.3 to 1.6 ppm, which applies to common chlorination process for drinking water purification.

  15. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  16. 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade

    Science.gov (United States)

    Da Via, Cinzia; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Chris; Kok, Angela; Parker, Sherwood; Pellegrini, Giulio; Vianello, Elisa; Zorzi, Nicola

    2012-12-01

    3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as ˜4 μm. Since 2009 four industrial partners of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of ˜4 cm2. The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

  17. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia; Boscardil, Maurizio; Dalla Betta, GianFranco; Darbo, Giovanni; Fleta, Celeste; Gemme, Claudia; Giacomini, Gabriele; Grenier, Philippe; Grinstein, Sebastian; Hansen, Thor-Erik; Hasi, Jasmine; Kenney, Christopher; Kok, Angela; La Rosa, Alessandro; Micelli, Andrea; Parker, Sherwood; Pellegrini, Giulio; Pohl, David-Leon; Povoli, Marco; Vianello, Elisa; Zorzi, Nicola; Watts, S. J.

    2013-01-01

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  18. 3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production

    Energy Technology Data Exchange (ETDEWEB)

    Da Vià, Cinzia, E-mail: cinzia.da.via@cern.ch [School of Physics and Astronomy, The University of Manchester, Oxford Road, M13 9PL Manchester (United Kingdom); Boscardil, Maurizio [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Dalla Betta, GianFranco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); Darbo, Giovanni [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Fleta, Celeste [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Gemme, Claudia [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Giacomini, Gabriele [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Grenier, Philippe [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Grinstein, Sebastian [Institut de Fisica d' Altes Energies (IFAE) and ICREA, Universitat Autonoma de Barcelona (UAB) E-08193, Bellaterra, Barcelona (Spain); Hansen, Thor-Erik [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Hasi, Jasmine; Kenney, Christopher [SLAC National Accelerator Laboratory, 2575 Sand Hill Rd, Menlo Park, CA 94025 (United States); Kok, Angela [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); La Rosa, Alessandro [CERN CH 1211, Geneva 23 (Switzerland); Micelli, Andrea [Tne University of Udine and INFN, via del Cotonificio 108, 33100 Udine (Italy); Parker, Sherwood [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley, CA 94720 (United States); Pellegrini, Giulio [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Pohl, David-Leon [Physikalisches Institut der Universität Bonn, Nußallee 12 D-53115, Bonn, Federal Republic of Germany (Germany); Povoli, Marco [DISI, Università degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); and others

    2013-01-21

    3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. The IBL collaboration, following that recommendation from the review panel, decided to complete the production of planar and 3D sensors and endorsed the proposal to build enough modules for a mixed IBL sensor scenario where 25% of 3D modules populate the forward and backward part of each stave. The production of planar sensors will also allow coverage of 100% of the IBL, in case that option was required. This paper will describe the processing strategy which allowed successful 3D sensor production, some of the Quality Assurance (QA) tests performed during the pre-production phase and the production yield to date.

  19. A theoretical approach to photosynthetically active radiation silicon sensor

    International Nuclear Information System (INIS)

    Tamasi, M.J.L.; Martínez Bogado, M.G.

    2013-01-01

    This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

  20. Gaseous slip flow analysis of a micromachined flow sensor for ultra small flow applications

    OpenAIRE

    Jang, Jaesung; Wereley, Steven

    2007-01-01

    The velocity slip of a fluid at a wall is one of the most typical phenomena in microscale gas flows. This paper presents a flow analysis considering the velocity slip in a capacitive micro gas flow sensor based on pressure difference measurements along a microchannel. The tangential momentum accommodation coefficient (TMAC) measurements of a particular channel wall in planar microchannels will be presented while the previous micro gas flow studies have been based on the same TMACs on both wal...

  1. A CMOS micromachined capacitive tactile sensor with integrated readout circuits and compensation of process variations.

    Science.gov (United States)

    Tsai, Tsung-Heng; Tsai, Hao-Cheng; Wu, Tien-Keng

    2014-10-01

    This paper presents a capacitive tactile sensor fabricated in a standard CMOS process. Both of the sensor and readout circuits are integrated on a single chip by a TSMC 0.35 μm CMOS MEMS technology. In order to improve the sensitivity, a T-shaped protrusion is proposed and implemented. This sensor comprises the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few post-processing steps. By a nano-indenter, the measured spring constant of the T-shaped structure is 2.19 kNewton/m. Fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction are utilized to compensate process variations and improve the accuracy of the readout circuits. The measured displacement-to-voltage transductance is 7.15 mV/nm, and the sensitivity is 3.26 mV/μNewton. The overall power dissipation is 132.8 μW.

  2. Evolution of silicon sensor technology in particle physics

    CERN Document Server

    Hartmann, Frank

    2017-01-01

    This informative monograph describes the technological evolution of silicon detectors and their impact on high energy particle physics. The author here marshals his own first-hand experience in the development and also the realization of the DELPHI, CDF II and the CMS tracking detector. The basic principles of small strip- and pixel-detectors are presented and also the final large-scale applications. The Evolution of Silicon Detector Technology acquaints readers with the manifold challenges involving the design of sensors and pushing this technology to the limits. The expert will find critical information that is so far only available in various slide presentation scattered over the world wide web. This practical introduction of silicon sensor technology and its day to day life in the lab also offers many examples to illustrate problems and their solutions over several detector generations. The new edition gives a detailed overview of the silicon sensor technology used at the LHC, from basic principles to act...

  3. A portable readout system for silicon microstrip sensors

    International Nuclear Information System (INIS)

    Marco-Hernandez, Ricardo

    2010-01-01

    This system can measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system is able to operate with different types (p- and n-type) and different sizes (up to 3 cm 2 ) of microstrip silicon sensors, both irradiated and non-irradiated. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format. The main characteristics of the system are described. Results of measurements acquired with n- and p-type detectors using both the laser and the radioactive source setup are also presented and discussed.

  4. Measurement of delta-rays in ATLAS silicon sensors

    CERN Document Server

    The ATLAS collaboration

    2013-01-01

    In the inner detector of the ATLAS experiment at the LHC, $\\delta$-rays originating from particle interactions in the silicon sensors may cause additional hit channels. A method for identifying silicon hit clusters that are enlarged due to the emission of a $\\delta$-ray is presented. Using pp collision data the expectation is confirmed that the $\\delta$-ray production rate depends linearly on the path length of the particle in silicon, independently of layer radius and detector technology. The range of the $\\delta$-rays, which is a property of the material and should not depend on anything else, is indeed found to be constant as a function of detector layer, path length in silicon and momentum of the particle traversing the silicon. As a by-product of this analysis a method is proposed that could correct for the effect of these $\\delta$-rays, and this could be used to improve track reconstruction.

  5. Silicon microring refractometric sensor for atmospheric CO(2) gas monitoring.

    Science.gov (United States)

    Mi, Guangcan; Horvath, Cameron; Aktary, Mirwais; Van, Vien

    2016-01-25

    We report a silicon photonic refractometric CO(2) gas sensor operating at room temperature and capable of detecting CO(2) gas at atmospheric concentrations. The sensor uses a novel functional material layer based on a guanidine polymer derivative, which is shown to exhibit reversible refractive index change upon absorption and release of CO(2) gas molecules, and does not require the presence of humidity to operate. By functionalizing a silicon microring resonator with a thin layer of the polymer, we could detect CO(2) gas concentrations in the 0-500ppm range with a sensitivity of 6 × 10(-9) RIU/ppm and a detection limit of 20ppm. The microring transducer provides a potential integrated solution in the development of low-cost and compact CO(2) sensors that can be deployed as part of a sensor network for accurate environmental monitoring of greenhouse gases.

  6. Optical wireless communications for micromachines

    Science.gov (United States)

    O'Brien, Dominic C.; Yuan, Wei Wen; Liu, Jing Jing; Faulkner, Grahame E.; Elston, Steve J.; Collins, Steve; Parry-Jones, Lesley A.

    2006-08-01

    A key challenge for wireless sensor networks is minimizing the energy required for network nodes to communicate with each other, and this becomes acute for self-powered devices such as 'smart dust'. Optical communications is a potentially attractive solution for such devices. The University of Oxford is currently involved in a project to build optical wireless links to smart dust. Retro-reflectors combined with liquid crystal modulators can be integrated with the micro-machine to create a low power transceiver. When illuminated from a base station a modulated beam is returned, transmitting data. Data from the base station can be transmitted using modulation of the illuminating beam and a receiver at the micro-machine. In this paper we outline the energy consumption and link budget considerations in the design of such micro-machines, and report preliminary experimental results.

  7. Automotive sensors

    Science.gov (United States)

    Marek, Jiri; Illing, Matthias

    2003-01-01

    Sensors are an essential component of most electronic systems in the car. They deliver input parameters for comfort features, engine and emission control as well as for the active and passive safety systems. New technologies such as silicon micromachining play an important role for the introduction of these sensors in all vehicle classes. The importance and use of these sensor technologies in today"s automotive applications will be shown in this article. Finally an outlook on important current developments and new functions in the car will be given.

  8. Performance of the PHOBOS silicon sensors

    CERN Document Server

    Decowski, M P; Baker, M D; Barton, D S; Betts, R R; Bindel, R; Budzanowski, A; Busza, W; Carroll, A; García, E; George, N; Gulbrandsen, K H; Gushue, S; Halliwell, C; Hamblen, J; Heintzelman, G A; Henderson, C; Holynski, R; Hofman, D J; Holzman, B; Johnson, E; Kane, J L; Katzy, J; Khan, N; Kucewicz, W; Kulinich, P; Lin, W T; Manly, S; McLeod, D; Michalowski, J; Mignerey, A C; Mülmenstädt, J; Nouicer, R; Olszewski, A; Pak, R; Park, I C; Pernegger, H; Reed, C; Remsberg, L P; Reuter, M; Roland, C; Roland, G; Rosenberg, L J; Sarin, P; Sawicki, P; Skulski, W; Steadman, S G; Stephans, G S F; Steinberg, P; Stodulski, M; Sukhanov, A; Tang, J L; Teng, R; Trzupek, A; Vale, C; Nieuwenhuizen, G J; Verdier, R; Wadsworth, B; Wolfs, F L H; Wosiek, B; Wozniak, K; Wuosmaa, A H; Wyslouch, B

    2002-01-01

    The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

  9. Silicon Nanowire Field-effect Chemical Sensor

    NARCIS (Netherlands)

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  10. Performance of the PHOBOS silicon sensors

    Science.gov (United States)

    Decowski, M. P.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A. C.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

    2002-02-01

    The PHOBOS detector is designed to study the physics of Au+Au collisions at the Relativistic Heavy Ion Collider. The detector is almost entirely made of silicon pad detectors and was fully operational during the first year of operation. The detector is described, and key performance characteristics are summarized.

  11. A facile fluorescent sensor based on silicon nanowires for dithionite

    Science.gov (United States)

    Cao, Xingxing; Mu, Lixuan; Chen, Min; She, Guangwei

    2018-05-01

    A facile and novel fluorescent sensor for dithionite has been constructed by simultaneously immobilizing dansyl group (fluorescence molecule) and dabsyl group (quencher and recognizing group) on the silicon nanowires (SiNWs) and SiNW arrays surface. This sensor for dithionite exhibited high selectivity and a good relationship of linearity between fluorescence intensities and dithionite concentrations from 0.1 to 1 mM. This approach is straightforward and does not require complicated synthesis, which can be extended to develop other sensors with similar rationale.

  12. Silicon sensor probing and radiation studies for the LHCb silicon tracker

    International Nuclear Information System (INIS)

    Lois, Cristina

    2006-01-01

    The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

  13. High precision silicon piezo resistive SMART pressure sensor

    International Nuclear Information System (INIS)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure 'module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the 'in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures

  14. High precision silicon piezo resistive SMART pressure sensor

    Science.gov (United States)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

  15. Radiation hardness of diamond and silicon sensors compared

    CERN Document Server

    de Boer, Wim; Furgeri, Alexander; Mueller, Steffen; Sander, Christian; Berdermann, Eleni; Pomorski, Michal; Huhtinen, Mika

    2007-01-01

    The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si- and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

  16. Silicon sensors for trackers at high-luminosity environment

    Energy Technology Data Exchange (ETDEWEB)

    Peltola, Timo, E-mail: timo.peltola@helsinki.fi

    2015-10-01

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

  17. 3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Da Via, Cinzia [School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL (United Kingdom); Boscardin, Maurizio [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy); Dalla Betta, Gian-Franco, E-mail: dallabe@disi.unitn.it [DISI, Universita degli Studi di Trento and INFN, Via Sommarive 14, I-38123 Trento (Italy); Darbo, Giovanni [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Fleta, Celeste [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Gemme, Claudia [INFN Sezione di Genova, Via Dodecaneso 33, I-14146 Genova (Italy); Grenier, Philippe [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Grinstein, Sebastian [Institut de Fisica d' Altes Energies (IFAE) and ICREA, Universitat Autonoma de Barcelona (UAB), E-08193 Bellaterra, Barcelona (Spain); Hansen, Thor-Erik [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Hasi, Jasmine; Kenney, Chris [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Kok, Angela [SINTEF MiNaLab, Blindern, N-0314 Oslo (Norway); Parker, Sherwood [University of Hawaii, c/o Lawrence Berkeley Laboratory, Berkeley, CA 94720 (United States); Pellegrini, Giulio [Centro Nacional de Microelectronica, CNM-IMB (CSIC), Barcelona E-08193 (Spain); Vianello, Elisa; Zorzi, Nicola [Fondazione Bruno Kessler, FBK-CMM, Via Sommarive 18, I-38123 Trento (Italy)

    2012-12-01

    3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as {approx}4 {mu}m. Since 2009 four industrial partners of the 3D ATLAS R and D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of {approx}4 cm{sup 2}. The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper.

  18. The silicon microstrip sensors of the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    ATLAS SCT Collaboration; Spieler, Helmuth G.

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS

  19. The silicon microstrip sensors of the ATLAS semiconductor tracker

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS SCT Collaboration; Spieler, Helmuth G.

    2007-04-13

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the Semiconductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd. supplied 92.2percent of the 15,392 installed sensors, with the remainder supplied by CiS.

  20. Application of CMOS Technology to Silicon Photomultiplier Sensors

    Science.gov (United States)

    D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

    2017-01-01

    We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

  1. The mid-IR silicon photonics sensor platform (Conference Presentation)

    Science.gov (United States)

    Kimerling, Lionel; Hu, Juejun; Agarwal, Anuradha M.

    2017-02-01

    Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called `Internet of Things' will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in

  2. Silicon Nanowire Field-effect Chemical Sensor

    OpenAIRE

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A novel top-down fabrication technique was presented for single-crystal Si-NW fabrication realized with conventional microfabrication technique. High quality triangular Si-NWs were made with high wafer-s...

  3. A silicon-based flexible tactile sensor for ubiquitous robot companion applications

    International Nuclear Information System (INIS)

    Kim, Kunnyun; Lee, Kang Ryeol; Lee, Dae Sung; Cho, Nam-Kyu; Kim, Won Hyo; Park, Kwang-Bum; Park, Hyo-Derk; Kim, Yong Kook; Park, Yon-Kyu; Kim, Jong-Ho

    2006-01-01

    We present the fabrication process and characteristics of a 3-axes flexible tactile sensor available for normal and shear mode fabricated using Si micromachining and packaging technologies. The fabrication processes for the 3 axes flexible tactile sensor were classified in the fabrication of sensor chips and their packaging on the flexible PCB. The variation rate of resistance was about 2.1%/N and 0.5%/N in applying normal and shear force, respectively. Because this tactile sensor can measure the variations of resistance of the semiconductor strain gauge for normal and shear force, it can be used to sense touch, pressure, hardness, and slip

  4. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    International Nuclear Information System (INIS)

    Larionov, Pavel

    2016-10-01

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

  5. Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel

    2016-10-15

    The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

  6. A Micromachined Infrared Senor for an Infrared Focal Plane Array

    Directory of Open Access Journals (Sweden)

    Seong M. Cho

    2008-04-01

    Full Text Available A micromachined infrared sensor for an infrared focal plane array has been designed and fabricated. Amorphous silicon was used as a sensing material, and silicon nitride was used as a membrane material. To get a good absorption in infrared range, the sensor structure was designed as a l/4 cavity structure. A Ni-Cr film was selected as an electrode material and mixed etching scheme was applied in the patterning process of the Ni-Cr electrode. All the processes were made in 0.5 μm iMEMS fabricated in the Electronics and Telecommunication Research Institute (ETRI. The processed MEMS sensor had a small membrane deflection less than 0.15 μm. This small deflection can be attributed to the rigorous balancing of the stresses of individual layers. The efficiency of infrared absorption was more than 75% in the wavelength range of 8 ~ 14 μm. The processed infrared sensor showed high responsivity of ~230 kV/W at 1.0V bias and 2 Hz operation condition. The time constant of the sensor was 8.6 msec, which means that the sensor is suitable to be operated in 30 Hz frame rate.

  7. Comparison of silicon strip tracker module size using large sensors from 6 inch wafers

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Two large silicon strip sensor made from 6 inch wafers are placed next to each other to simulate the size of a CMS outer silicon tracker module. On the left is a prototype 2 sensor CMS inner endcap silicon tracker module made from 4 inch wafers.

  8. On the timing performance of thin planar silicon sensors

    Science.gov (United States)

    Akchurin, N.; Ciriolo, V.; Currás, E.; Damgov, J.; Fernández, M.; Gallrapp, C.; Gray, L.; Junkes, A.; Mannelli, M.; Martin Kwok, K. H.; Meridiani, P.; Moll, M.; Nourbakhsh, S.; Pigazzini, S.; Scharf, C.; Silva, P.; Steinbrueck, G.; de Fatis, T. Tabarelli; Vila, I.

    2017-07-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, with depletion thicknesses 133, 211, and 285 μm, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  9. Advanced silicon sensors for future collider experiments

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00437143; Moll, Michael; Mannelli, Marcello

    In this thesis, we address two key technological challenges: the radiation tolerance assessment and timing performance studies of thin planar diodes to be used as sensing technology in the recently approved CMS forward sampling calorimeter for the HL-LHC operation, the High Granularity Calorimeter (HGCAL); and, complementary, we carried out a detailed study of a novel kind of position sensitive microstrip sensors for ionising particles which implements the well established charge-division method to determine the particle impinging position along the microstrip electrode direction; this technology could become an interesting low-material budget solution for the new generation of tracking detectors to be operated in the future lepton collider experiments.

  10. Electrochemical detection of dopamine using arrays of liquid-liquid micro-interfaces created within micromachined silicon membranes

    International Nuclear Information System (INIS)

    Berduque, Alfonso; Zazpe, Raul; Arrigan, Damien W.M.

    2008-01-01

    The detection of protonated dopamine by differential pulse voltammetry (DPV) and square wave voltammetry (SWV) at arrays of micro-interfaces between two immiscible electrolyte solutions (μITIES) is presented. Microfabricated porous silicon membranes (consisting of eight pores, 26.6 μm in radius and 500 μm pore-pore separation, in a hexagonal layout) were prepared by photolithographic and etching procedures. The membrane pores were fabricated with hydrophobic internal walls so that the organic phase filled the pores and created the liquid interface at the aqueous side of the membrane. These were used for harnessing the benefits of three-dimensional diffusion to the interface and for interface stabilisation. The liquid-liquid interface provides a simple method to overcome the major problem in the voltammetric detection of dopamine at solid electrodes due to the co-existence of ascorbate at higher concentrations. Selectivity for dopamine over ascorbate was achieved by the use of dibenzo-18-crown-6 (DB18C6) for the facilitated ion transfer of dopamine across the μITIES array. Under these conditions, the presence of ascorbate in excess did not interfere in the detection of dopamine and the lowest concentration detectable was ca. 0.5 μM. In addition, the drawback of current signal saturation (non-linear increase of the peak current with the concentration of dopamine) observed at conventional (millimetre-sized) liquid-liquid interfaces was overcome using the microfabricated porous membranes

  11. Strip defect recognition in electrical tests of silicon microstrip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Valentan, Manfred, E-mail: valentan@mpp.mpg.de

    2017-02-11

    This contribution describes the measurement procedure and data analysis of AC-coupled double-sided silicon microstrip sensors with polysilicon resistor biasing. The most thorough test of a strip sensor is an electrical measurement of all strips of the sensor; the measured observables include e.g. the strip's current and the coupling capacitance. These measurements are performed to find defective strips, e.g. broken capacitors (pinholes) or implant shorts between two adjacent strips. When a strip has a defect, its observables will show a deviation from the “typical value”. To recognize and quantify certain defects, it is necessary to determine these typical values, i.e. the values the observables would have without the defect. As a novel approach, local least-median-of-squares linear fits are applied to determine these “would-be” values of the observables. A least-median-of-squares fit is robust against outliers, i.e. it ignores the observable values of defective strips. Knowing the typical values allows to recognize, distinguish and quantify a whole range of strip defects. This contribution explains how the various defects appear in the data and in which order the defects can be recognized. The method has been used to find strip defects on 30 double-sided trapezoidal microstrip sensors for the Belle II Silicon Vertex Detector, which have been measured at the Institute of High Energy Physics, Vienna (Austria).

  12. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    Science.gov (United States)

    Ghosh, P.

    2014-07-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

  13. Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

    International Nuclear Information System (INIS)

    Ghosh, P

    2014-01-01

    The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

  14. Signal development in silicon sensors used for radiation detection

    International Nuclear Information System (INIS)

    Becker, Julian

    2010-08-01

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  15. Signal development in silicon sensors used for radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian

    2010-08-15

    This work investigates the charge collection properties in silicon sensors. In order to perform the investigations a setup for measurements utilizing the Transient Current Technique (TCT) has been designed and built. Optical lasers with different wavelengths and short pulses (FWHM<100 ps) have been used to create charge carriers in the sensor volume. A new parameterization of charge carrier mobilities in bulk silicon as function of electric field and temperature was derived for two different crystal orientations from investigations on pad sensors with low charge carrier densities. In the course of these investigations a simulation program for current pulses was developed. The program simulates current pulses, which are induced by drift and diffusion of charge carriers for pad sensors, and approximately for strip and pixel sensors. The simulation program could be used to describe the current pulses of irradiated sensors. Additionally, using the simulation program, it was shown that impact ionization is a possible reason for the recently reported charge multiplication effects in highly irradiated sensors. The central topic of this work is the investigation of effects of high charge carrier densities, so called plasma effects. In this work plasma effects were created by focusing the lasers. The measurements of the plasma efffects on pad sensors were used as reference measurements for simulations performed by WIAS in Berlin. It was shown that using charge transport models accepted in literature, the observed plasma effects cannot be described. Measurements on strip sensors were performed with regards to the detector development for the European XFEL. Measurements of peak currents and charge collection times as function of photon intensity and applied bias voltage allowed the determination of optimum operation parameters of the Adaptive Gain Integration Pixel Detector (AGIPD), which will be used at the European XFEL. Utilizing position sensitive measurements on strip

  16. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  17. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    Science.gov (United States)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  18. Modified porous silicon for electrochemical sensor of para-nitrophenol

    International Nuclear Information System (INIS)

    Belhousse, S.; Belhaneche-Bensemra, N.; Lasmi, K.; Mezaache, I.; Sedrati, T.; Sam, S.; Tighilt, F.-Z.; Gabouze, N.

    2014-01-01

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10 −8 M to the 3 × 10 −4 M

  19. Modified porous silicon for electrochemical sensor of para-nitrophenol

    Energy Technology Data Exchange (ETDEWEB)

    Belhousse, S., E-mail: all_samia_b@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Belhaneche-Bensemra, N., E-mail: nbelhaneche@yahoo.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Lasmi, K., E-mail: kahinalasmi@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Mezaache, I., E-mail: lyeso_44@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sedrati, T., E-mail: tarek_1990m@hotmail.fr [Ecole Nationale Polytechnique (ENP), 10, Avenue Hassen Badi, B.P. 182, 16200, El Harrach, Algiers (Algeria); Sam, S., E-mail: Sabrina.sam@polytechnique.edu [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Tighilt, F.-Z., E-mail: mli_zola@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), Division Thin Films-Surface and Interface, 2, Bd. Frantz Fanon, B.P. 140, Alger-7 merveilles, Algiers (Algeria)

    2014-11-15

    Highlights: • Hybrid device based on Porous silicon (PSi) and polythiophene (PTh) was prepared. • Three types of PSi/PTh hybrid structures were elaborated: PSi/PTh, oxide/PSi/PTh and Amino-propyltrimethoxysilane (APTMES)/oxide/PSi/PTh. • PTh was grafted on PSi using electrochemical polymerization. • The electrodetection of para-nitrophenol (p-NPh) was performed by cyclic voltammetry. • Oxide/PSi/PTh and APTMES/oxide/PSi/PTh, based electrochemical sensor showed a good response toward p-NPh. - Abstract: Hybrid structures based on polythiophene modified porous silicon was used for the electrochemical detection of para-nitrophenol, which is a toxic derivative of parathion insecticide and it is considered as a major toxic pollutant. The porous silicon was prepared by anodic etching in hydrofluodic acid. Polythiophene films were then grown by electropolymerisation of thiophene monomer on three different surfaces: hydrogenated PSi, oxidized PSi and amine-terminated PSi. The morphology of the obtained structures were observed by scanning electron microscopy and characterized by spectroscopy (FTIR). Cyclic voltammetry was used to study the electrochemical response of proposed structures to para-nitrophenol. The results show a high sensitivity of the sensor and a linearity of the electrochemical response in a large concentration interval ranging from 1.5 × 10{sup −8} M to the 3 × 10{sup −4}M.

  20. Radiation hard silicon sensors for the CMS tracker upgrade

    CERN Document Server

    Pohlsen, Thomas

    2013-01-01

    At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

  1. Silicon Sensor and Detector Developments for the CMS Tracker Upgrade

    CERN Document Server

    D'Alessandro, Raffaello

    2011-01-01

    CMS started a campaign to identify the future silicon sensor technology baseline for a new Tracker for the high-luminosity phase of LHC, coupled to a new effective way of providing tracking information to the experiment trigger. To this end a large variety of 6'' wafers was acquired in different thicknesses and technologies at HPK and new detector module designs were investigated. Detector thicknesses ranging from 50$\\mu$m to 300$\\mu$m are under investigation on float zone, magnetic Czochralski and epitaxial material both in n-in-p and p-in-n versions. P-stop and p-spray are explored as isolation technology for the n-in-p type sensors as well as the feasibility of double metal routing on 6'' wafers. Each wafer contains different structures to answer different questions, e.g. influence of geometry, Lorentz angle, radiation tolerance, annealing behaviour, validation of read-out schemes. Dedicated process test-structures, as well as diodes, mini-sensors, long and very short strip sensors and real pixel sensors ...

  2. Results from a beam test of silicon strip sensors manufactured by Infineon Technologies AG

    Energy Technology Data Exchange (ETDEWEB)

    Dragicevic, M., E-mail: marko.dragicevic@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Auzinger, G. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); CERN, Geneva (Switzerland); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Gamerith, S.; Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); König, A. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Infineon Technologies Austria AG, Villach (Austria); Kröner, F.; Kucher, E.; Moser, J.; Neidhart, T. [Infineon Technologies Austria AG, Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, Munich (Germany); Schustereder, W. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Wübben, T. [Infineon Technologies Austria AG, Villach (Austria)

    2014-11-21

    Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction of particle tracks. So far only a few vendors were capable of producing silicon strip sensors with the quality needed in particle physics experiments. Together with the European-based semiconductor manufacturer Infineon Technologies AG (Infineon) the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) developed planar silicon strip sensors in p-on-n technology. This work presents the first results from a beam test of strip sensors manufactured by Infineon.

  3. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  4. Sensor assembly method using silicon interposer with trenches for three-dimensional binocular range sensors

    Science.gov (United States)

    Nakajima, Kazuhiro; Yamamoto, Yuji; Arima, Yutaka

    2018-04-01

    To easily assemble a three-dimensional binocular range sensor, we devised an alignment method for two image sensors using a silicon interposer with trenches. The trenches were formed using deep reactive ion etching (RIE) equipment. We produced a three-dimensional (3D) range sensor using the method and experimentally confirmed that sufficient alignment accuracy was realized. It was confirmed that the alignment accuracy of the two image sensors when using the proposed method is more than twice that of the alignment assembly method on a conventional board. In addition, as a result of evaluating the deterioration of the detection performance caused by the alignment accuracy, it was confirmed that the vertical deviation between the corresponding pixels in the two image sensors is substantially proportional to the decrease in detection performance. Therefore, we confirmed that the proposed method can realize more than twice the detection performance of the conventional method. Through these evaluations, the effectiveness of the 3D binocular range sensor aligned by the silicon interposer with the trenches was confirmed.

  5. Micromachined Precision Inertial Instruments

    National Research Council Canada - National Science Library

    Najafi, Khalil

    2003-01-01

    This program focuses on developing inertial-grade micromachined accelerometers and gyroscopes and their associated electronics and packaging for use in a variety of military and commercial applications...

  6. MEMS-based Micro Coriolis mass flow sensor

    NARCIS (Netherlands)

    Haneveld, J.; Brouwer, Dannis Michel; Mehendale, A.; Zwikker, R.; Lammerink, Theodorus S.J.; de Boer, Meint J.; Wiegerink, Remco J.

    2008-01-01

    We have realized a micromachined micro Coriolis flow sensor consisting of a silicon nitride resonant tube of 40 μm diameter and 1.2 μm wall thickness. First measurements with both gas and liquid flows have demonstrated an unprecedented mass flow resolution in the order of 10 mg/hr at a full scale

  7. A high performance micro-pressure sensor based on a double-ended quartz tuning fork and silicon diaphragm in atmospheric packaging

    International Nuclear Information System (INIS)

    Cheng, Rongjun; Li, Cun; Zhao, Yulong; Li, Bo; Tian, Bian

    2015-01-01

    A resonant micro-pressure sensor based on a double-ended quartz tuning fork (DEQTF) and bossed silicon diaphragm in atmospheric packaging is presented. To achieve vacuum-free packaging with a high quality factor, the DEQTF is designed to resonate in an anti-phase vibration mode in a plane that is under the effect of slide-film damping. The feasibility is demonstrated by theoretical analysis and a finite element simulation. The dimensions of the DEQTF and diaphragm are optimized in accordance with the principles of improving sensitivity and minimizing energy dissipation. The sensor chip is fabricated using quartz and silicon micromachining technologies, and simply packaged in a stainless steel shell with standard atmosphere. The experimental setup is established for the calibration, where an additional sensor prototype without a pressure port is introduced as a frequency reference. By detecting the frequency difference of the tested sensor and reference sensor, the influences of environmental factors such as temperature and shocks on measuring accuracy are eliminated effectively. Under the action of a self-excitation circuit, static performance is obtained. The sensitivity of the sensor is 299 kHz kPa −1 in the operating range of 0–10 kPa at room temperature. Testing results shows a nonlinearity of 0.0278%FS, a hysteresis of 0.0207%FS and a repeatability of 0.0375%FS. The results indicate that the proposed sensor has favorable features, which provides a cost-effective and high-performance approach for low pressure measurement. (paper)

  8. Resonant gravimetric immunosensing based on capacitive micromachined ultrasound transducers

    KAUST Repository

    Viržonis, Darius

    2014-04-08

    High-frequency (40 MHz) and low-frequency (7 MHz) capacitive micromachined ultrasound transducers (CMUT) were fabricated and tested for use in gravimetric detection of biomolecules. The low-frequency CMUT sensors have a gold-coated surface, while the high-frequency sensors have a silicon nitride surface. Both surfaces were functionalized with bovine leukemia virus antigen gp51 acting as the antigen. On addition of an a specific antibody labeled with horseradish peroxidase (HRP), the antigen/antibody complex is formed on the surface and quantified by HRP-catalyzed oxidation of tetramethylbenzidine. It has been found that a considerably smaller quantity of immuno complex is formed on the high frequency sensor surface. In parallel, the loading of the surface of the CMUT was determined via resonance frequency and electromechanical resistance readings. Following the formation of the immuno complexes, the resonance frequencies of the low-frequency and high-frequency sensors decrease by up to 420 and 440 kHz, respectively. Finite element analysis reveals that the loading of the (gold-coated) low frequency sensors is several times larger than that on high frequency sensors. The formation of the protein film with pronounced elasticity and stress on the gold surface case is discussed. We also discuss the adoption of this method for the detection of DNA using a hybridization assay following polymerase chain reaction.

  9. Planar silicon sensors for the CMS Tracker upgrade

    CERN Document Server

    Junkes, Alexandra

    2013-01-01

    The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

  10. Precision Timing with Silicon Sensors for Use in Calorimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bornheim, A. [Caltech; Ronzhin, A. [Fermilab; Kim, H. [Chicago U.; Bolla, G. [Fermilab; Pena, C. [Caltech; Xie, S. [Caltech; Apresyan, A. [Caltech; Los, S. [Fermilab; Spiropulu, M. [Caltech; Ramberg, E. [Fermilab

    2017-11-27

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm-2 s-1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  11. Packaging of silicon sensors for microfluidic bio-analytical applications

    International Nuclear Information System (INIS)

    Wimberger-Friedl, Reinhold; Prins, Menno; Megens, Mischa; Dittmer, Wendy; Witz, Christiane de; Nellissen, Ton; Weekamp, Wim; Delft, Jan van; Ansems, Will; Iersel, Ben van

    2009-01-01

    A new industrial concept is presented for packaging biosensor chips in disposable microfluidic cartridges to enable medical diagnostic applications. The inorganic electronic substrates, such as silicon or glass, are integrated in a polymer package which provides the electrical and fluidic interconnections to the world and provides mechanical strength and protection for out-of-lab use. The demonstrated prototype consists of a molded interconnection device (MID), a silicon-based giant magneto-resistive (GMR) biosensor chip, a flex and a polymer fluidic part with integrated tubing. The various processes are compatible with mass manufacturing and run at a high yield. The devices show a reliable electrical interconnection between the sensor chip and readout electronics during extended wet operation. Sandwich immunoassays were carried out in the cartridges with surface functionalized sensor chips. Biological response curves were determined for different concentrations of parathyroid hormone (PTH) on the packaged biosensor, which demonstrates the functionality and biocompatibility of the devices. The new packaging concept provides a platform for easy further integration of electrical and fluidic functions, as for instance required for integrated molecular diagnostic devices in cost-effective mass manufacturing

  12. Precision Timing with Silicon Sensors for Use in Calorimetry

    Science.gov (United States)

    Bornheim, A.; Ronzhin, A.; Kim, H.; Bolla, G.; Pena, C.; Xie, S.; Apresyan, A.; Los, S.; Spiropulu, M.; Ramberg, E.

    2017-11-01

    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) at CERN is expected to provide instantaneous luminosities of 5 × 1034 cm -2 s -1. The high luminosities expected at the HL-LHC will be accompanied by a factor of 5 to 10 more pileup compared with LHC conditions in 2015, causing general confusion for particle identification and event reconstruction. Precision timing allows to extend calorimetric measurements into such a high density environment by subtracting the energy deposits from pileup interactions. Calorimeters employing silicon as the active component have recently become a popular choice for the HL- LHC and future collider experiments which face very high radiation environments. We present studies of basic calorimetric and precision timing measurements using a prototype composed of tungsten absorber and silicon sensor as the active medium. We show that for the bulk of electromagnetic showers induced by electrons in the range of 20 GeV to 30 GeV, we can achieve time resolutions better than 25 ps per single pad sensor.

  13. Modeling and identification of induction micromachines in microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Lyshevski, S.E. [Purdue University at Indianapolis (United States). Dept. of Electrical and Computer Engineering

    2002-11-01

    Microelectromechanical systems (MEMS), which integrate motion microstructures, radiating energy microdevices, controlling and signal processing integrated circuits (ICs), are widely used. Rotational and translational electromagnetic based micromachines are used in MEMS as actuators and sensors. Brushless high performance micromachines are the preferable choice in different MEMS applications, and therefore, synchronous and induction micromachines are the best candidates. Affordability, good performance characteristics (efficiency, controllability, robustness, reliability, power and torque densities etc.) and expanded operating envelopes result in a strong interest in the application of induction micromachines. In addition, induction micromachines can be easily fabricated using surface micromachining and high aspect ratio fabrication technologies. Thus, it is anticipated that induction micromachines, controlled using different control algorithms implemented using ICs, will be widely used in MEMS. Controllers can be implemented using specifically designed ICs to attain superior performance, maximize efficiency and controllability, minimize losses and electromagnetic interference, reduce noise and vibration, etc. In order to design controllers, the induction micromachine must be modeled, and its mathematical model parameters must be identified. Using microelectromechanics, nonlinear mathematical models are derived. This paper illustrates the application of nonlinear identification methods as applied to identify the unknown parameters of three phase induction micromachines. Two identification methods are studied. In particular, nonlinear error mapping technique and least squares identification are researched. Analytical and numerical results, as well as practical capabilities and effectiveness, are illustrated, identifying the unknown parameters of a three phase brushless induction micromotor. Experimental results fully support the identification methods. (author)

  14. Electroless porous silicon formation applied to fabrication of boron-silica-glass cantilevers

    DEFF Research Database (Denmark)

    Teva, Jordi; Davis, Zachary James; Hansen, Ole

    2010-01-01

    This work describes the characterization and optimization of anisotropic formation of porous silicon in large volumes (0.5-1 mm3) of silicon by an electroless wet etching technique. The main goal is to use porous silicon as a sacrificial volume for bulk micromachining processes, especially in cases...... where etching of the full wafer thickness is needed. The porous silicon volume is formed by a metal-assisted etching in a wet chemical solution composed of hydrogen peroxide (30%), hydrofluoric acid (40%) and ethanol. This paper focuses on optimizing the etching conditions in terms of maximizing...... for bio-chemical sensors. The porous silicon volume is formed in an early step of the fabrication process, allowing easy handling of the wafer during all of the micromachining processes in the process flow. In the final process step, the porous silicon is quickly etched by immersing the wafer in a KOH...

  15. Micromachined two dimensional resistor arrays for determination of gas parameters

    NARCIS (Netherlands)

    van Baar, J.J.J.; Verwey, Willem B.; Dijkstra, Mindert; Dijkstra, Marcel; Wiegerink, Remco J.; Lammerink, Theodorus S.J.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    A resistive sensor array is presented for two dimensional temperature distribution measurements in a micromachined flow channel. This allows simultaneous measurement of flow velocity and fluid parameters, like thermal conductivity, diffusion coefficient and viscosity. More general advantages of

  16. Quality assurance tests of the CBM silicon tracking system sensors with an infrared laser

    Energy Technology Data Exchange (ETDEWEB)

    Teklishyn, Maksym [FAIR GmbH, Darmstadt (Germany); KINR, Kyiv (Ukraine); Collaboration: CBM-Collaboration

    2016-07-01

    Double-sided 300 μm thick silicon microstrip sensors are planned to be used in the Silicon Tracking System (STS) of the future CBM experiment. Different tools, including an infrared laser, are used to induce charge in the sensor medium to study the sensor response. We use present installation to develop a procedure for the sensor quality assurance during mass production. The precise positioning of the laser spot allows to make a clear judgment about the sensor interstrip gap response which provides information about the charge distribution inside the sensor medium. Results are compared with the model estimations.

  17. FY 1998 report on the R and D of micromachine technology. R and D of micromachine technology; 1998 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    In the comprehensive investigational study of micromachine technology, the paper aims at clarifying the improvement of functional devices and the future development of micromachine technology for establishment of the technology needed to realize a micromachine system composing of small-functional elements for conducting diagnosis/cure/repair, movement and independent work in small portions in living organism, disaster site, etc. and a medical-use micromachine system to analyze/react on a trace of liquid. In this fiscal year, the following were carried out: 1) study of micromachine systems, 2) study of a medical-use micromachine system to analyze/react on a trace liquid, and 3) comprehensive investigational study. In 1), studies were made toward the minuteness and improvement of micro laser catheter and micro tactile sensor catheter as functional devices which become the main components of micro catheter for cerebrovascular diagnosis/therapy use and toward the minuteness and improvement of disaster relief use micromachine system. In 2), study was made of element technology of a micro-machine system having functions of sampling/analysis/reaction of a trace of liquid. (NEDO)

  18. Quality assurance and irradiation studies on CMS silicon strip sensors

    CERN Document Server

    Furgeri, Alexander

    The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

  19. A beam monitor using silicon pixel sensors for hadron therapy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhen, E-mail: zwang@mails.ccnu.edu.cn; Zou, Shuguang; Fan, Yan; Liu, Jun; Sun, Xiangming, E-mail: sphy2007@126.com; Wang, Dong; Kang, Huili; Sun, Daming; Yang, Ping; Pei, Hua; Huang, Guangming; Xu, Nu; Gao, Chaosong; Xiao, Le

    2017-03-21

    We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, Topmetal-II{sup -}, as the anode array. Topmetal-II{sup -} is a charge sensor designed in a CMOS 0.35 µm technology. Each Topmetal-II{sup -} sensor has 72×72 pixels and the pixel size is 83×83 µm{sup 2}. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 µm, angular resolution about 0.5° and intensity statistical accuracy better than 2%.

  20. A Novel Sensor for VOCs Using Nanostructured ZnO and MEMS Technologies

    Directory of Open Access Journals (Sweden)

    H. J. Pandya

    2012-03-01

    Full Text Available A sensor for detection of vapors of volatile organic compounds (VOCs incorporating nanostructured zinc oxide film and silicon micromachining is reported. One of the key features of the sensor is the use of nanostructured ZnO material which has been synthesized using a novel low cost process. Considerable reduction in the operating temperature of the sensor has been achieved due to the use of nanostructured ZnO material as compared to a sensor having ZnO thin film as the sensing layer. The sensor is formed on a micromachined silicon platform thereby reducing the heat loss. This resulted in reduction in power consumption. The sensor has been tested for a variety of VOCs such as: ethanol, iso-propyl alcohol and acetone. The maximum sensitivity of sensor was observed for ethanol vapors.

  1. Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector

    OpenAIRE

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2002-01-01

    To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sen...

  2. Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

    OpenAIRE

    Preeti kumari; Kavita Lalwani; Ranjeet Dalal; Geetika Jain; Ashutosh Bhardwaj; Kirti Ranjan

    2015-01-01

    The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminos...

  3. Investigation of the impact of mechanical stress on the properties of silicon sensor modules for the ATLAS Phase II upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Stegler, Martin; Polay, Luise; Spehrlich, Dennis; Bloch, Ingo [DESY, Zeuthen (Germany)

    2016-07-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. Such a module consists of silicon sensors, boards and readout chips. In a currently ongoing study new adhesives to connect the modular components thermally and mechanically are examined. It was shown that the silicon sensor is exposed to mechanical stress when part of a module. Mechanical stress can cause damage to a sensor and can change the tensors of electrical properties. The study of the effects of mechanical stress on characteristics of the silicon sensor modules are the focus in this presentation. The thermal induced tensile stress near to the surface of a silicon sensor build in a module was simulated. A four point bending setup was used to measure the maximum tensile stress of silicon and to verify the piezoresistive effect on ATLAS07 sensors. The results of the electrical measurements and simulations of stressed silicon sensor modules are shown in the presentation.

  4. Micromachined fiber optic Fabry-Perot underwater acoustic probe

    Science.gov (United States)

    Wang, Fuyin; Shao, Zhengzheng; Hu, Zhengliang; Luo, Hong; Xie, Jiehui; Hu, Yongming

    2014-08-01

    One of the most important branches in the development trend of the traditional fiber optic physical sensor is the miniaturization of sensor structure. Miniature fiber optic sensor can realize point measurement, and then to develop sensor networks to achieve quasi-distributed or distributed sensing as well as line measurement to area monitoring, which will greatly extend the application area of fiber optic sensors. The development of MEMS technology brings a light path to address the problems brought by the procedure of sensor miniaturization. Sensors manufactured by MEMS technology possess the advantages of small volume, light weight, easy fabricated and low cost. In this paper, a fiber optic extrinsic Fabry-Perot interferometric underwater acoustic probe utilizing micromachined diaphragm collaborated with fiber optic technology and MEMS technology has been designed and implemented to actualize underwater acoustic sensing. Diaphragm with central embossment, where the embossment is used to anti-hydrostatic pressure which would largely deflect the diaphragm that induce interferometric fringe fading, has been made by double-sided etching of silicon on insulator. By bonding the acoustic-sensitive diaphragm as well as a cleaved fiber end in ferrule with an outer sleeve, an extrinsic Fabry-Perot interferometer has been constructed. The sensor has been interrogated by quadrature-point control method and tested in field-stable acoustic standing wave tube. Results have been shown that the recovered signal detected by the sensor coincided well with the corresponding transmitted signal and the sensitivity response was flat in frequency range from 10 Hz to 2kHz with the value about -154.6 dB re. 1/μPa. It has been manifest that the designed sensor could be used as an underwater acoustic probe.

  5. Simulation and characterization of silicon nanopillar-based nanoparticle sensors

    Science.gov (United States)

    Wasisto, Hutomo Suryo; Merzsch, Stephan; Huang, Kai; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2013-05-01

    Nanopillar-based structures hold promise as highly sensitive resonant mass sensors for a new generation of aerosol nanoparticle (NP) detecting devices because of their very small masses. In this work, the possible use of a silicon nanopillar (SiNPL) array as a nanoparticle sensor is investigated. The sensor structures are created and simulated using a finite element modeling (FEM) tool of COMSOL Multiphysics 4.3 to study the resonant characteristics and the sensitivity of the SiNPL for femtogram NP mass detection. Instead of using 2D plate models or simple single 3D cylindrical pillar models, FEM is performed with SiNPLs in 3D structures based on the real geometry of experimental SiNPL arrays employing a piezoelectric stack for resonant excitation. In order to achieve an optimal structure and investigate the etching effect on the fabricated resonators, SiNPLs with different designs of meshes, sidewall profiles, lengths, and diameters are simulated and analyzed. To validate the FEM results, fabricated SiNPLs with a high aspect ratio of ~60 are employed and characterized in resonant frequency measurements. SiNPLs are mounted onto a piezoactuator inside a scanning electron microscope (SEM) chamber which can excite SiNPLs into lateral vibration. The measured resonant frequencies of the SiNPLs with diameters about 650 nm and heights about 40 μm range from 434.63 kHz to 458.21 kHz, which agree well with those simulated by FEM. Furthermore, the deflection of a SiNPL can be enhanced by increasing the applied piezoactuator voltage. By depositing different NPs (i.e., carbon, TiO2, SiO2, Ag, and Au NPs) on the SiNPLs, the decrease of the resonant frequency is clearly shown confirming their potential to be used as airborne NP mass sensor with femtogram resolution level.

  6. Porous Silicon Hydrogen Sensor at Room Temperature: The Effect of Surface Modification and Noble Metal Contacts

    Directory of Open Access Journals (Sweden)

    Jayita KANUNGO

    2009-04-01

    Full Text Available Porous silicon (PS was fabricated by anodization of p-type crystalline silicon of resistivity 2-5 Ω cm. After formation, the PS surface was modified by the solution containing noble metal like Pd. Pd-Ag catalytic contact electrodes were deposited on porous silicon and on p-Silicon to fabricate Pd-Ag/PS/p-Si/Pd-Ag sensor structure to carry out the hydrogen sensing experiments. The Sensor was exposed to 1% hydrogen in nitrogen as carrier gas at room temperature (270C. Pd modified sensor showed minimum fluctuations and consistent performance with 86% response, response time and recovery time of 24 sec and 264 sec respectively. The stability experiments were studied for both unmodified and Pd modified sensor structures for a period of about 24 hours and the modified sensors showed excellent durability with no drift in response behavior.

  7. A VDF/TrFE copolymer on silicon pyroelectric sensor: design considerations and experiments

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.

    1995-01-01

    For an optimal design of a VDF/TrFE (vinylidene fluoride trifluoroethylene) copolymer-on-silicon pyroelectric sensor, the one-dimensional diffusion equation is solved for the pyroelectric multilayer structure. Output current and voltage of the sensor are calculated. Improvement of the sensor can be

  8. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  9. Silicon sensors for the upgrades of the CMS pixel detector

    International Nuclear Information System (INIS)

    Centis Vignali, Matteo

    2015-12-01

    Hamburg will be 120 MHz/cm 2 . For this rate the modules' efficiency has been measured to be 99%. In view of the module production, the energy calibration procedure has been automated. The modules assigned to the Hamburg production center should be completed by the end of February 2016. For the phase II upgrade, thin silicon sensors with an active thickness of 100 μm irradiated with protons up to Φ eq =1.3.10 16 cm -2 have been characterized. The charge collection efficiency has been measured using pad diodes. Charge multiplication effects have been observed for both n- and p-bulk sensors. P-bulk strip sensors with an active thickness of 100 and 200 μm have been characterized with a beam test. The signal of these sensors lies between 4000 and 5000 e - after a fluence of 1.3.10 16 cm -2 . The 200 μm thick sensors require a higher bias voltage than the 100 μm thick sensors to reach this signal height. The threshold necessary to obtain 95% detection efficiency is found to be around 2000 e - for the 100 μm thick sensors.

  10. Microfabricated Chemical Sensors for Safety and Emission Control Applications

    Science.gov (United States)

    Hunter, G. W.; Neudeck, P. G.; Chen, L.-Y.; Knight, D.; Liu, C. C.; Wu, Q. H.

    1998-01-01

    Chemical sensor technology is being developed for leak detection, emission monitoring, and fire safety applications. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication (MicroElectroMechanical Systems (MEMS)-based) technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Using these technologies, sensors to measure hydrogen, hydrocarbons, nitrogen oxides, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

  11. X-ray microcalorimeter arrays fabricated by surface micromachining

    International Nuclear Information System (INIS)

    Hilton, G.C.; Beall, J.A.; Deiker, S.; Vale, L.R.; Doriese, W.B.; Beyer, Joern; Ullom, J.N.; Reintsema, C.D.; Xu, Y.; Irwin, K.D.

    2004-01-01

    We are developing arrays of Mo/Cu transition edge sensor-based detectors for use as X-ray microcalorimeters and sub-millimeter bolometers. We have fabricated 8x8 pixel X-ray microcalorimeter arrays using surface micromachining. Surface-micromachining techniques hold the promise of scalability to much larger arrays and may allow for the integration of in-plane multiplexer elements. In this paper we describe the surface micromachining process and recent improvements in the device geometry that provide for increased mechanical strength. We also present X-ray and heat pulse spectra collected using these detectors

  12. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    International Nuclear Information System (INIS)

    Aziz, T; Chendvankar, S R; Mohanty, G B; Patil, M R; Rao, K K; Rani, Y R; Rao, Y P P; Behnamian, H; Mersi, S; Naseri, M

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor on a four-inch wafer. After finding suitable test procedures for characterizing these AC coupled sensors, we fine-tuned various process parameters in order to produce sensors of the desired specifications

  13. The silicon sensors for the Inner Tracker of the Compact Muon Solenoid Experiment

    International Nuclear Information System (INIS)

    Krammer, M.

    2003-01-01

    Full text: The Inner Tracker of the Compact Muon Solenoid Experiment, at present under construction, will consist of more than 24000 silicon strip sensors arranged in 10 central concentric layers and 2 X 9 discs at both ends. The total sensitive silicon area will exceed 200 m 2 . The silicon sensors are produced in various thicknesses and geometries. Each sensor has 512 or 768 implanted strips which will allow to measure the position of traversing high energy charged particles. This paper a short overview of the CMS tracker system. Subsequently the design of the silicon sensors is explained with special emphasis on the radiation hardness and on the high voltage stability of the sensors. Two companies share the production of these sensors. The quality of the sensors is extensively checked by several laboratories associated with CMS. Important electrical parameters are measured on the sensors themselves. In addition, dedicated test structures were designed by CMS which allow the monitoring of many parameters sensitive to the production process. By May 2003 about 3000 sensors were delivered and a large fraction of these sensors and tests structures was measured. A summary of these measurements will be given and the main results will be discussed

  14. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    OpenAIRE

    Poley, Anne-Luise

    2018-01-01

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy).The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole...

  15. Uncooled tunneling infrared sensor

    Science.gov (United States)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  16. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  17. Synthesis and characterization of porous silicon gas sensors

    Science.gov (United States)

    abbas, Roaa A.; Alwan, Alwan M.; Abdulhamied, Zainab T.

    2018-05-01

    In this work, photo-electrochemical etching process of n-type Silicon of resistivity(10 Ω.cm) and (100) orientation, using two illumination sources IR and violet wavelength in HF acid have been used to produce PSi gas detection device. The fabrication process was carried out at a fixed etching current density of 25mA/cm2 and at different etching time (5, 10, 15 and 20) min and (8, 16, 24, and 30) min. Two configurations of gas sensor configuration planer and sandwich have been made and investigated. The morphological properties have been studied using SEM,the FTIR measurement show that the (Si-Hx) and (Si-O-Si) absorption peak were increases with increasing etching time,and Photoluminescence properties of PSi layer show decrease in the peak of PL peak toward the violet shift. The gas detection process is made on the CO2 gas at different operating temperature and fixed gas concentration. In the planner structure, the gas sensing was measured through, the change in the resistance readout as a function to the exposure time, while for sandwich structure J-V characteristic have been made to determine the sensitivity.

  18. Investigation of the impact of mechanical stress on the properties of silicon strip sensors

    CERN Document Server

    Affolder, Tony; The ATLAS collaboration

    2017-01-01

    The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. The strip sensor module consists of silicon sensors, boards and readout chips. Adhesives are used to connect the modular components thermally and mechanically. It was shown that the silicon sensor is exposed to mechanical stress, due to temperature difference between construction and operation. Mechanical stress can damage the sensor and can change the electrical properties. The thermal induced tensile stress near to the surface of a silicon sensor in a module was simulated and the results are compared to a cooled module. A four point bending setup was used to measure the maximum tensile stress of silicon detectors and to verify the piezoresistive effects on two recent development sensor types used in ATLAS (ATLAS07 and ATLAS12). Changes in the interstrip, bulk and bias resistance and capacitance as well as the coupling capacitance and the implant resistance were measured. The Leakage current was observed to decreas...

  19. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  20. Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

  1. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  2. Testbeam studies of silicon microstrip sensor architectures modified to facilitate detector module mass production

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2016-01-01

    For the High Luminosity Upgrade of the LHC, the Inner Detector of the ATLAS detector will be replaced by an all-silicon tracker, consisting of pixel and strip sensor detector modules. Silicon strip sensors are being developed to meet both the tracking requirements in a high particle density environment and constraints imposed by the construction process. Several thousand wire bonds per module, connecting sensor strips and readout channels, need to be produced with high reliability and speed, requiring wire bond pads of sufficient size on each sensor strip. These sensor bond pads change the local sensor architecture and the resulting electric field and thus alter the sensor performance. These sensor regions with bond pads, which account for up to 10 % of a silicon strip sensor, were studied using both an electron beam at DESY and a micro-focused X-ray beam at the Diamond Light Source. This contribution presents measurements of the effective strip width in sensor regions where the structure of standard parallel...

  3. P-Type Silicon Strip Sensors for the Future CMS Tracker

    CERN Document Server

    The Tracker Group of the CMS Collaboration

    2016-01-01

    The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

  4. Development and applications of monocrystalline silicon radiation sensors fabricated at Comision Nacional de Energia Atomica (CNEA)

    International Nuclear Information System (INIS)

    Bolzi, C; Bruno, C; Duran, J; Godfrin, E; Martinez Bogado, M; Pla, J; Tamasi, M

    2005-01-01

    The development of silicon photovoltaic sensors at CNEA has begun in 1998.These sensors, fabricated in the Photovoltaic Laboratory of the Solar Energy Group at Constituyentes Atomic Center, have been used to build low cost radiometers as well as solar angular position sensors on board of artificial satellites.The design, fabrication and calibration of these sensors have been made in different prototypes in order to analyze its performance and to evaluate its limitations.Nowadays, several commercial prototypes have been distributed in different laboratories of our country in order to evaluate them in real work conditions.Particularly, the first experiment of argentine solar cells on space performed on board of SAC-A satellite, included the fabrication of position sensors of this satellite as part of the alignment system of the solar array respect to the sun.In this article, the state of the art of monocrystalline silicon photovoltaic sensors fabricated at CNEA for terrestrial and space applications is presented

  5. Discretely tunable micromachined injection-locked lasers

    International Nuclear Information System (INIS)

    Cai, H; Yu, M B; Lo, G Q; Kwong, D L; Zhang, X M; Liu, A Q; Liu, B

    2010-01-01

    This paper reports a micromachined injection-locked laser (ILL) to provide tunable discrete wavelengths. It utilizes a non-continuously tunable laser as the master to lock a Fabry–Pérot semiconductor laser chip. Both lasers are integrated into a deep-etched silicon chip with dimensions of 3 mm × 3 mm × 0.8 mm. Based on the experimental results, significant improvements in the optical power and spectral purity have been achieved in the fully locked state, and optical hysteresis and bistability have also been observed in response to the changes of the output wavelength and optical power of the master laser. As a whole system, the micromachined ILL is able to provide single mode, discrete wavelength tuning, high power and direct modulation with small size and single-chip solution, making it promising for advanced optical communications such as wavelength division multiplexing optical access networks.

  6. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  7. Studying the mechanism of micromachining by short pulsed laser

    Science.gov (United States)

    Gadag, Shiva

    The semiconductor materials like Si and the transparent dielectric materials like glass and quartz are extensively used in optoelectronics, microelectronics, and microelectromechanical systems (MEMS) industries. The combination of these materials often go hand in hand for applications in MEMS such as in chips for pressure sensors, charge coupled devices (CCD), and photovoltaic (PV) cells for solar energy generation. The transparent negative terminal of the solar cell is made of glass on one surface of the PV cell. The positive terminal (cathode) on the other surface of the solar cell is made of silicon with a glass negative terminal (anode). The digital watches and cell phones, LEDs, micro-lens, optical components, and laser optics are other examples for the application of silicon and or glass. The Si and quartz are materials extensively used in CCD and LED for digital cameras and CD players respectively. Hence, three materials: (1) a semiconductor silicon and transparent dielectrics,- (2) glass, and (3) quartz are chosen for laser micromachining as they have wide spread applications in microelectronics industry. The Q-switched, nanosecond pulsed lasers are most extensively used for micro-machining. The nanosecond type of short pulsed laser is less expensive for the end users than the second type, pico or femto, ultra-short pulsed lasers. The majority of the research work done on these materials (Si, SiO 2, and glass) is based on the ultra-short pulsed lasers. This is because of the cut quality, pin point precision of the drilled holes, formation of the nanometer size microstructures and fine features, and minimally invasive heat affected zone. However, there are many applications such as large surface area dicing, cutting, surface cleaning of Si wafers by ablation, and drilling of relatively large-sized holes where some associated heat affected zone due to melting can be tolerated. In such applications the nanosecond pulsed laser ablation of materials is very

  8. Stiction in surface micromachining

    NARCIS (Netherlands)

    Tas, Niels Roelof; Sonnenberg, A.H.; Jansen, Henricus V.; Legtenberg, R.; Legtenberg, Rob; Elwenspoek, Michael Curt

    1996-01-01

    Due to the smoothness of the surfaces in surface micromachining, large adhesion forces between fabricated structures and the substrate are encountered. Four major adhesion mechanisms have been analysed: capillary forces, hydrogen bridging, electrostatic forces and van der Waals forces. Once contact

  9. The micromachined logo of Atomki

    International Nuclear Information System (INIS)

    Rajta, I.; Szilasi, S.Z.

    2006-01-01

    Complete text of publication follows. Proton Beam Micromachining, also known as P-beam Writing, is a direct write 3- dimensional lithographic technique. Conventional resist types are PMMA (polymethylmethacrylate), and SU-8 (of MicroChem Corp.); they are positive and negative resists, respectively. In this work we used SU-8, the most common negative resist material. SU-8 was spun on a flat surface, typically Silicon or glass. A direct write proton beam was scanned over an arbitary structure (the Atomki logo can be replaced by any other structure), which produces chain scissioning in the polymer. Post exposure bake (PEB) is usually needed in case of conventional optical lithography, but using protons this bake is done in situ as the ions heat up the sample in vacuum. Subsequently chemical etching takes place, the solvent is available at MicroChem Corp. The schematic diagram of the above described micromachining process is shown on Fig. 1. The irradiation requires a scanning proton microbeam system equipped with suitable beam scanning and blanking facilities. This is available in the Institute, our setup has been upgraded from doublet to triplet focusing system (Oxford Microbeams Ltd.). For scanning we use a DIO card (PCI-6731 of National Instruments), and the IonScan software [1]. Sample preparation was carried out at our 'semi clean' room. This is also where chemical development of the samples and the optical microscopy have been done too. A Zeiss Axio Imager microscope is available (equipped with 5 objective lenses, 4 different contrast methods, transmitted or reflected light illumination). Fig. 2. shows a typical example of the Atomki logo. This is a bright field image, a number of different nice and colourful images can be produced with the other contrast techniques (for more images see the Institute website: http://www.atomki.hu/ ). (author)

  10. Utility of silicone filtering for diffusive model CO2 sensors in field experiments

    Directory of Open Access Journals (Sweden)

    Shinjiro Ohkubo

    2013-05-01

    Full Text Available Installing a diffusive model CO2 sensor in the soil is a direct and useful method to observe the time variation of gas CO2 concentration in soil. Furthermore, it requires no bulky measurement system. A hydrophobic silicone filter prevents water infiltration. Therefore, a sensor whose detection element is covered with a silicone filter can be durable in the field even when experiencing inundation (e.g. farmland with snow melting, wetland with varying water level. The utility of a diffusive model of CO2 sensor covered with silicone filter was examined in laboratory and field experiments. Applying the silicone filter delays the response to change in ambient CO2 concentration, which results from lower gas permeability than those of other conventionally used filters made of materials, such as polytetrafluoroethylene. Theoretically, apart from the precision of the sensor itself, diurnal variation of soil gas CO2 concentration is calculable from obtained series of data with a silicone-covered sensor with negligible error. The error is estimated at approximately 1% of the diurnal amplitude in most cases of a 10-min logging interval. Drastic changes that occur, such as those of a rainfall event, cause a larger gap separating calculated and real values. However, the proportion of this gap to the extent of the drastic increase was extremely small (0.43% for a 10-min logging interval. For accurate estimation, a smoothly varied data series must be prepared as input data. Using a moving average or applying a fitting curve can be useful when using a sensor or data logger with low resolution. Estimating the gas permeability coefficient is crucial for calculation. The gas permeability coefficient can be estimated through laboratory experiments. This study revealed the possibility of evaluating the time variation of soil gas CO2 concentration by installing a diffusive model of silicone-covered sensor in an inundated field.

  11. Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

    Science.gov (United States)

    Beheim, Glenn M.

    2003-01-01

    The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were

  12. Silicon nanowire structures as high-sensitive pH-sensors

    International Nuclear Information System (INIS)

    Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

    2012-01-01

    Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

  13. SIMULATED 8 MeV NEUTRON RESPONSE FUNCTIONS OF A THIN SILICON NEUTRON SENSOR.

    Science.gov (United States)

    Takada, Masashi; Matsumoto, Tetsuro; Masuda, Akihiko; Nunomiya, Tomoya; Aoyama, Kei; Nakamura, Takashi

    2017-12-22

    Neutron response functions of a thin silicon neutron sensor are simulated using PHITS2 and MCNP6 codes for an 8 MeV neutron beam at angles of incidence of 0°, 30° and 60°. The contributions of alpha particles created from the 28Si(n,α)25Mg reaction and the silicon nuclei scattered elastically by neutrons in the silicon sensor have not been well reproduced using the MCNP6 code. The 8 MeV neutron response functions simulated using the PHITS2 code with an accurate event generator mode are in good agreement with experimental results and include the contributions of the alpha particles and silicon nuclei. © The Author(s) 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  14. Design, fabrication and characterization of the first AC-coupled silicon microstrip sensors in India

    CERN Document Server

    Aziz, T; Mohanty, G.B.; Patil, M.R.; Rao, K.K.; Rani, Y.R.; Rao, Y.P.P.; Behnamian, H.; Mersi, S.; Naseri, M.

    2014-01-01

    This paper reports the design, fabrication and characterization of single-sided silicon microstrip sensors with integrated biasing resistors and coupling capacitors, produced for the first time in India. We have first developed a prototype sensor with different width and pitch combinations on a single 4-inch wafer. After finding test procedures for characterizing these AC coupled sensors, we have chosen an optimal width-pitch combination and also fine-tuned various process parameters in order to produce sensors with the desired specifications.

  15. New technique for fabrication of high frequency piezoelectric Micromachined Ultrasound Transducers

    DEFF Research Database (Denmark)

    Pedersen, T; Thomsen, Erik Vilain; Zawada, T

    2008-01-01

    A novel technique for fabrication of linear arrays of high frequency piezoelectric Micromachined Ultrasound Transducers (pMUT) on silicon substrates is presented. Piezoelectric elements are formed by deposition of PZT ((PbZrxTi1-x)O3) into etched features of the silicon substrate such that the de......A novel technique for fabrication of linear arrays of high frequency piezoelectric Micromachined Ultrasound Transducers (pMUT) on silicon substrates is presented. Piezoelectric elements are formed by deposition of PZT ((PbZrxTi1-x)O3) into etched features of the silicon substrate...

  16. 3D, Flash, Induced Current Readout for Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

    2014-06-07

    A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

  17. First thin AC-coupled silicon strip sensors on 8-inch wafers

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Dragicevic, M.; König, A. [Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, 1050 Wien (Vienna) (Austria); Hacker, J.; Bartl, U. [Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach (Austria)

    2016-09-11

    The Institute of High Energy Physics (HEPHY) in Vienna and the semiconductor manufacturer Infineon Technologies Austria AG developed a production process for planar AC-coupled silicon strip sensors manufactured on 200 μm thick 8-inch p-type wafers. In late 2015, the first wafers were delivered featuring the world's largest AC-coupled silicon strip sensors. Detailed electrical measurements were carried out at HEPHY, where single strip and global parameters were measured. Mechanical studies were conducted and the long-term behavior was investigated using a climate chamber. Furthermore, the electrical properties of various test structures were investigated to validate the quality of the manufacturing process.

  18. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2017-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker. In order to minimise the amount of material in the detector, circuit boards with readout electronics will be glued on to the active area of the sensor. Several adhesives investigated to be used for the construction of detector modules were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high- radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By pointing the beam both inside the sensor and parallel to the sensor surface, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibility of silicon strip sensors to light contamination from fluorescent mate...

  19. Investigation of silicon sensors for their use as antiproton annihilation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pacifico, N., E-mail: nicola.pacifico@cern.ch [University of Bergen, Institute of Physics and Technology, Allégaten 55, 5007 Bergen (Norway); Aghion, S. [Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sez. di Milano, Via Celoria 16, 20133 Milano (Italy); Ahlén, O. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Belov, A.S. [Institute for Nuclear Research of the Russian Academy of Sciences, Moscow 117312 (Russian Federation); Bonomi, G. [University of Brescia, Department of Mechanical and Industrial Engineering, Via Branze 38, 25133 Brescia (Italy); Istituto Nazionale di Fisica Nucleare, Sez. di Pavia, Via Agostino Bassi 6, 27100 Pavia (Italy); Bräunig, P. [Kirchhoff Institute for Physics, Im Neuenheimer Feld 227, 69120 Heidelberg (Germany); Bremer, J. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Brusa, R.S. [Department of Physics, University of Trento, via Sommarive 14, 38123 Povo, Trento (Italy); INFN-TIFPA, via Sommarive 14, 38123 Povo, Trento (Italy); Burghart, G. [European Organisation for Nuclear Research, Physics Department, 1211 Geneva 23 (Switzerland); Cabaret, L. [Laboratoire Aimé Cotton, CNRS, Université Paris Sud, ENS Cachan, Bâtiment 505, Campus d' Orsay, 91405 Orsay Cedex (France); Caccia, M. [University of Insubria, Dipartimento di Scienza ed Alta Tecnologia, via Valleggio 11, Como (Italy); Canali, C. [University of Zurich, Physics Institute, Winterthurerstrasse 190, 8057 Zurich (Switzerland); Caravita, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Genova, Via Dodecaneso 33, 16146 Genova (Italy); University of Genoa, Department of Physics, Via Dodecaneso 33, 16146 Genova (Italy); Castelli, F. [University of Milano, Department of Physics, Via Celoria 16, 20133 Milano (Italy); and others

    2014-11-21

    We present here a new application of silicon sensors aimed at the direct detection of antinucleons annihilations taking place inside the sensor's volume. Such detectors are interesting particularly for the measurement of antimatter properties and will be used as part of the gravity measurement module in the AEg{sup ¯}IS experiment at the CERN Antiproton Decelerator. One of the goals of the AEg{sup ¯}IS experiment is to measure the gravitational acceleration of antihydrogen with 1% precision. Three different silicon sensor geometries have been tested with an antiproton beam to investigate their properties as annihilation detection devices: strip planar, 3D pixels and monolithic pixel planar. In all cases we were successfully detecting annihilations taking place in the sensor and we were able to make a first characterization of the clusters and tracks.

  20. Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00407830; Moenig, Klaus

    2018-04-04

    This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy). The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole time-of-flight mass spectroscopy, gel permeability chromatography and gas chromatography combined with mass spectrometry (GC-MS). GC-MS analyses of glue sample extracts before and after irradiation showed molecule cross-linking and broken chemical bonds to different extents and allowed to quantify the radiation hardness of the adhesives under investigation. Probe station measurements were used to investigate electrical characteristics of sensors partially covered with adhesives in comparison with sensors without adhesiv...

  1. Micromachining with copper lasers

    Science.gov (United States)

    Knowles, Martyn R. H.; Bell, Andy; Foster-Turner, Gideon; Rutterford, Graham; Chudzicki, J.; Kearsley, Andrew J.

    1997-04-01

    In recent years the copper laser has undergone extensive development and has emerged as a leading and unique laser for micromachining. The copper laser is a high average power (10 - 250 W), high pulse repetition rate (2 - 32 kHz), visible laser (511 nm and 578 nm) that produces high peak power (typically 200 kW), short pulses (30 ns) and very good beam quality (diffraction limited). This unique set of laser parameters results in exceptional micro-machining in a wide variety of materials. Typical examples of the capabilities of the copper laser include the drilling of small holes (10 - 200 micrometer diameter) in materials as diverse as steel, ceramic, diamond and polyimide with micron precision and low taper (less than 1 degree) cutting and profiling of diamond. Application of the copper laser covers the electronic, aerospace, automotive, nuclear, medical and precision engineering industries.

  2. Optical temperature sensor with enhanced sensitivity by employing hybrid waveguides in a silicon Mach-Zehnder interferometer

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    We report on a novel design of an on-chip optical temperature sensor based on a Mach-Zehnder interferometer configuration where the two arms consist of hybrid waveguides providing opposite temperature-dependent phase changes to enhance the temperature sensitivity of the sensor. The sensitivity...... of the fabricated sensor with silicon/polymer hybrid waveguides is measured to be 172 pm/°C, which is two times larger than a conventional all-silicon optical temperature sensor (∼80 pm/°C). Moreover, a design with silicon/titanium dioxide hybrid waveguides is by calculation expected to have a sensitivity as high...

  3. IV and CV curves for irradiated prototype BTeV silicon pixel sensors

    International Nuclear Information System (INIS)

    Coluccia, Maria R.

    2002-01-01

    The authors present IV and CV curves for irradiated prototype n + /n/p + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. They tested pixel sensors from various vendors and with two pixel isolation layouts: p-stop and p-spray. Results are based on exposure with 200 MeV protons up to 6 x 10 14 protons/cm 2

  4. Advanced technology trend survey of micromachines in Europe; Oshu ni okeru micromachine sentan gijutsu doko chosa

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-02-01

    In this research survey, the development trend of micromachine technology in Europe was surveyed, development level of micromachine technology of European companies was grasped, and practical application fields of their target were investigated. Technology development level of private companies in Japan`s national projects and practical application fields of Japan`s target were arranged. Trends of micromachine technology development are compared between Japanese companies and European companies. Among micromachine technology development projects in Europe, ``8520 MUST`` is a part of the ESPRIT Project. About 40,000 companies among about 170,000 companies in whole Europe are relating to the MUST Project. The main fields include the manufacturing technology, process control of machines, technology of safety, sensor technology in environmental fields, and automotive technology. The marketing fields of application include the automobile, military technology, home automation, industrial process, medical technology, environmental technology, and games. The results can be compared with the direction of research and development in Japan. 22 figs., 8 tabs.

  5. arXiv Time resolution of silicon pixel sensors

    CERN Document Server

    Riegler, W.

    2017-11-21

    We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic expressions for the three components contributing to the time resolution, namely charge deposit fluctuations, noise and fluctuations of the signal shape due to weighting field variations. Then we derive expressions for the time resolution using leading edge discrimination of the signal for various electronics shaping times. Time resolution of silicon detectors with internal gain is discussed as well.

  6. Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives

    Directory of Open Access Journals (Sweden)

    Jović Vesna B.

    2011-01-01

    Full Text Available This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives “Scotch Weld 2214 Hi-Temp” from “3M Co.” and “DM2700P/H848” from “DIEMAT”, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values, which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ºC.

  7. Realization of an integrated VDF/TrFE copolymer-on-silicon pyroelectric sensor

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.; Sarro, P.M.

    1995-01-01

    An integrated pyroelectric sensor based on a vinylidene fluoride trifluoroethylene (VDF/TrFE) copolymer is presented. A silicon substrate that contains FET readout electronics is coated with the VDF/TrFE copolymer film using a spin-coating technique. On-chip poling of the copolymer has been applied

  8. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  9. The silicon microstrip sensors of the ATLAS semiconductor tracker

    Czech Academy of Sciences Publication Activity Database

    Ahmad, A.; Albrechtskirchinger, Z.; Allport, P.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

    2007-01-01

    Roč. 578, - (2007), s. 98-118 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10100502 Keywords : ATLAS * SCT * silicon * microstrip * module * LHC Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.114, year: 2007

  10. Optimizing Floating Guard Ring Designs for FASPAX N-in-P Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Kyung-Wook [Argonne; Bradford, Robert [Argonne; Lipton, Ronald [Fermilab; Deptuch, Gregory [Fermilab; Fahim, Farah [Fermilab; Madden, Tim [Argonne; Zimmerman, Tom [Fermilab

    2016-10-06

    FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intended $\\mbox{13 $MHz$}$ image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to $10^{\\text{5}}$ x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.

  11. Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Eckstein, Doris; Eichhorn, Thomas [Deutsches Elektronen Synchrotron (DESY) (Germany)

    2016-07-01

    The high-luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the tracker of the CMS experiment. The innermost layer of the new pixel detector will be exposed to severe radiation corresponding to a 1 MeV neutron equivalent fluence up to Φ{sub eq} = 2 . 10{sup 16} cm{sup -2} and an ionizing dose of ∼ 10 MGy after an integrated luminosity of 3000 fb{sup -1}. Silicon crystals grown with different methods and sensor designs are under investigation in order to optimize the sensors for such high fluences. Thin planar silicon sensors are good candidates to achieve this goal, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Epitaxial pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 . 10{sup 16} cm{sup -2} have been characterized in laboratory measurements and beam tests at the DESY II facility. The active thickness of the strip sensors and pad diodes is 100 μm. In addition, strip sensors produced using other growth techniques with a thickness of 200 μm have been studied. In this talk, the results obtained for p-bulk sensors are shown.

  12. Signals from fluorescent materials on the surface of silicon micro-strip sensors

    CERN Document Server

    Sperlich, Dennis; The ATLAS collaboration

    2018-01-01

    For the High-Luminosity Upgrade of the Large Hadron Collider at CERN, the ATLAS Inner Detector will be replaced with a new, all-silicon tracker (ITk). In order to minimise the amount of material in the ITk, circuit boards with readout electronics will be glued onto the active area of the sensor. Several adhesives, investigated to be used for the construction of detector modules, were found to become fluorescent when exposed to UV light. These adhesives could become a light source in the high-radiation environment of the ATLAS detector. The effect of fluorescent material covering the sensor surface in a high-radiation environment has been studied for a silicon micro-strip sensor using a micro-focused X-ray beam. By positioning the beam parallel to the sensor surfave and pointing it both inside the sensor and above the sensor surface inside the deposited glue, the sensor responses from direct hits and fluorescence can be compared with high precision. This contribution presents a setup to study the susceptibilit...

  13. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  14. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    International Nuclear Information System (INIS)

    Bomben, M.; Bagolini, A.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown

  15. Effect of fluorocarbon self-assembled monolayer films on sidewall adhesion and friction of surface micromachines with impacting and sliding contact interfaces

    International Nuclear Information System (INIS)

    Xiang, H.; Komvopoulos, K.

    2013-01-01

    A self-assembled monolayer film consisting of fluoro-octyltrichlorosilane (FOTS) was vapor-phase deposited on Si(100) substrates and polycrystalline silicon (polysilicon) surface micromachines. The hydrophobic behavior and structural composition of the FOTS film deposited on Si(100) were investigated by goniometry and X-ray photoelectron spectroscopy, respectively. The effects of contact pressure, relative humidity, temperature, and impact/sliding cycles on the adhesive and friction behavior of uncoated and FOTS-coated polysilicon micromachines (referred to as the Si and FOTS/Si micromachines, respectively) were investigated under controlled loading and environmental conditions. FOTS/Si micromachines demonstrated much lower and stable adhesion than Si micromachines due to the highly hydrophobic and conformal FOTS film. Contrary to Si micromachines, sidewall adhesion of FOTS/Si micromachines demonstrated a weak dependence on relative humidity, temperature, and impact cycles. In addition, FOTS/Si micromachines showed low and stable adhesion and low static friction for significantly more sliding cycles than Si micromachines. The adhesive and static friction characteristics of Si and FOTS/Si micromachines are interpreted in the context of physicochemical surface changes, resulting in the increase of the real area of contact and a hydrophobic-to-hydrophilic transition of the surface chemical characteristics caused by nanoscale surface smoothening and the removal of the organic residue (Si micromachines) or the FOTS film (FOTS/Si micromachines) during repetitive impact and oscillatory sliding of the sidewall surfaces.

  16. Performance of the ALIBAVA portable readout system with irradiated and non-irradiated microstrip silicon sensors

    International Nuclear Information System (INIS)

    Marco-Hernadez, R.

    2009-01-01

    A readout system for microstrip silicon sensors has been developed as a result of collaboration among the University of Liverpool, the CNM of Barcelona and the IFIC of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256, as an analogue measurement. The system uses two Beetle chips to read out the detector(s). The Beetle chip is an analogue pipelined readout chip used in the LHCb experiment. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the SLHC, so this system is being to research the performance of microstrip silicon sensors in conditions as similar as possible to the SLHC operating conditions. The system has two main parts: a hardware part and a software part. The hardware part acquires the sensor signals either from external trigger inputs, in case of a radioactive source setup is used, or from a synchronised trigger output generated by the system, if a laser setup is used. This acquired data is sent by USB to be stored in a PC for a further processing. The hardware is a dual board based system. The daughterboard is a small board intended for containing two Beetle readout chips as well as fan-ins and detector support to interface the sensors. The motherboard is intended to process the data, to control the whole hardware and to communicate with the software by USB. The software controls the system and processes the data acquired from the sensors in order to store it in an adequate format file. The main characteristics of the system will be described. Results of measurements acquired with n-type and p-type irradiated and non-irradiated detectors using both the laser and the radioactive source setup will be also presented and discussed

  17. Size of silicon strip sensor from 6 inch wafer (right) compared to that from a 4 inch wafer (left).

    CERN Multimedia

    Honma, Alan

    1999-01-01

    Silicon strip sensors made from 6 inch wafers will allow for much larger surface area coverage at a reduced cost per unit surface area. A prototype sensor of size 8cm x 11cm made by Hamamatsu from a 6 inch wafer is shown next to a traditional 6cm x 6cm sensor from a 4 inch wafer.

  18. The Silicon Microstrip Sensors of the ATLAS SemiConductor Tracker

    CERN Document Server

    Ahmad, A; Allport, P P; Alonso, J; Andricek, L; Apsimon, R J; Barr, A J; Bates, R L; Beck, G A; Bell, P J; Belymam, A; Benes, J; Berg, C M; Bernabeu, J; Bethke, S; Bingefors, N; Bizzell, J P; Bohm, J; Brenner, R; Brodbeck, T J; Bruckman De Renstrom, P; Buttar, C M; Campbell, D; Carpentieri, C; Carter, A A; Carter, J R; Charlton, D G; Casse, G-L; Chilingarov, A; Cindro, V; Ciocio, A; Civera, J V; Clark, A G; Colijn, A-P; Costa, M J; Dabrowski, W; Danielsen, K M; Dawson, I; Demirkoz, B; Dervan, P; Dolezal, Z; Dorholt, O; Duerdoth, I P; Dwuznik, M; Eckert, S; Ekelöf, T; Eklund, L; Escobar, C; Fasching, D; Feld, L; Ferguson, D P S; Ferrere, D; Fortin, R; Foster, J M; Fox, H; French, R; Fromant, B P; Fujita, K; Fuster, J; Gadomski, S; Gallop, B J; Garcia, C; Garcia-Navarro, J E; Gibson, M D; Gonzalez, S; Gonzalez-Sevilla, S; Goodrick, M J; Gornicki, E; Green, C; Greenall, A; Grigson, C; Grillo, A A; Grosse-Knetter, J; Haber, C; Handa, T; Hara, K; Harper, R S; Hartjes, F G; Hashizaki, T; Hauff, D; Hessey, N P; Hill, J C; Hollins, T I; Holt, S; Horazdovsky, T; Hornung, M; Hovland, K M; Hughes, G; Huse, T; Ikegami, Y; Iwata, Y; Jackson, J N; Jakobs, K; Jared, R C; Johansen, L G; Jones, R W L; Jones, T J; de Jong, P; Joseph, J; Jovanovic, P; Kaplon, J; Kato, Y; Ketterer, C; Kindervaag, I M; Kodys, P; Koffeman, E; Kohriki, T; Kohout, Z; Kondo, T; Koperny, S; van der Kraaij, E; Kral, V; Kramberger, G; Kudlaty, J; Lacasta, C; Limper, M; Linhart, V; Llosa, G; Lozano, M; Ludwig, I; Ludwig, J; Lutz, G; Macpherson, A; McMahon, S J; Macina, D; Magrath, C A; Malecki, P; Mandic, I; Marti-Garcia, S; Matsuo, T; Meinhardt, J; Mellado, B; Mercer, I J; Mikestikova, M; Mikuz, M; Minano, M; Mistry, J; Mitsou, V; Modesto, P; Mohn, B; Molloy, S D; Moorhead, G; Moraes, A; Morgan, D; Morone, M C; Morris, J; Moser, H-G; Moszczynski, A; Muijs, A J M; Nagai, K; Nakamura, Y; Nakano, I; Nicholson, R; Niinikoski, T; Nisius, R; Ohsugi, T; O'Shea, V; Oye, O K; Parzefall, U; Pater, J R; Pernegger, H; Phillips, P W; Posisil, S; Ratoff, P N; Reznicek, P; Richardson, J D; Richter, R H; Robinson, D; Roe, S; Ruggiero, G; Runge, K; Sadrozinski, H F W; Sandaker, H; Schieck, J; Seiden, A; Shinma, S; Siegrist, J; Sloan, T; Smith, N A; Snow, S W; Solar, M; Solberg, A; Sopko, B; Sospedra, L; Spieler, H; Stanecka, E; Stapnes, S; Stastny, J; Stelzer, F; Stradling, A; Stugu, B; Takashima, R; Tanaka, R; Taylor, G; Terada, S; Thompson, R J; Titov, M; Tomeda, Y; Tovey, D R; Turala, M; Turner, P R; Tyndel, M; Ullan, M; Unno, Y; Vickey, T; Vos, M; Wallny, R; Weilhammer, P; Wells, P S; Wilson, J A; Wolter, M; Wormald, M; Wu, S L; Yamashita, T; Zontar, D; Zsenei, A

    2007-01-01

    This paper describes the AC-coupled, single-sided, p-in-n silicon microstrip sensors used in the SemiConductor Tracker (SCT) of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The sensor requirements, specifications and designs are discussed, together with the qualification and quality assurance procedures adopted for their production. The measured sensor performance is presented, both initially and after irradiation to the fluence anticipated after 10 years of LHC operation. The sensors are now successfully assembled within the detecting modules of the SCT, and the SCT tracker is completed and integrated within the ATLAS Inner Detector. Hamamatsu Photonics Ltd supplied 92.2% of the 15,392 installed sensors, with the remainder supplied by CiS.

  19. First experimental results on active and slim-edge silicon sensors for XFEL

    International Nuclear Information System (INIS)

    Pancheri, L.; Benkechcache, M. E. A.; Betta, G.-F. Dalla; Xu, H.; Verzellesi, G.; Ronchin, S.; Boscardin, M.; Ratti, L.; Grassi, M.; Lodola, L.; Malcovati, P.; Vacchi, C.; Manghisoni, M.; Re, V.; Traversi, G.; Batignani, G.; Bettarini, S.; Casarosa, G.; Giorgi, M.; Forti, F.

    2016-01-01

    This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 μm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 μm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.

  20. Position Reconstruction and Charge Distribution in LHCb VELO Silicon Sensors

    CERN Document Server

    Versloot, TW; Akiba, K; Artuso, M; Van Beuzekom, M; Borel, J; Bowcock, TJV; Buytaert, J; Collins, P; Dumps, R; Dwyer, L; Eckstein, D; Eklund, L; Ferro-Luzzi, M; Frei, R; Gersabek M; Haefeli, G; Hennessy, K; Huse, T; Jans, E; John, M; Ketel, TJ; Keune, A; Lastoviicka, T; Mountain, R; Neufeld, N; Parkes, C; Stone, S; Szumlak, T; Tobin, M; Van Lysebetten, A; Viret, S; De Vries, H; Wang, J

    2007-01-01

    In 2006, a partially equipped LHCb VELO detector half was characterised in a test beam experiment (Alignment Challenge and Detector Commissioning, ACDC3). The position reconstruction and resolution for 2-strip R-sensor clusters was studied as a function of strip pitch and track inclination on the sensor surface. The Charge Density Distribution (CDD) is derived from the weighted charge distribution. It becomes asymmetric for tracks non-perpendicular to the strip surface. It is shown that the asymmetric broadening of the CDD around the track intercept position results in a linear eta-function at higher angles (>6 degrees). The sensor spatial resolution is determined both using a linear weighted mean of strip charges, as well as a third-order polynomial approximation via a eta-correction. The experimental results are in agreement with previous simulations. Future studies are underway to determine the angle and pitch dependent parameters which will be implemented in the LHCb VELO cluster position software tools.

  1. Experimental and numerical studies on the sensitivity of carbon fibre/silicone rubber composite sensors

    International Nuclear Information System (INIS)

    Yang, Lili; Ge, Yong; Zhu, Qinghua; Zhang, Ce; Wang, Zongpeng; Liu, Penghuan

    2012-01-01

    Flexible conductive composite sensors are of great importance for applications in structural monitoring due to their low cost, high durability and excellent compatibility. In this work, carbon fibre/silicone rubber composites were prepared and their sensitivity near the percolation threshold was investigated experimentally and theoretically. Results show that carbon fibre/silicone rubber composites have great mechanical and sensitivity even under high strain conditions. Two models based on the tunnelling effect and general effective medium theory were found to understand the sensitivity of composites with lower and higher fractions of carbon fibre. Moreover, the reversibility of the sensing performance is improved with the increase of carbon fibre addition. (paper)

  2. The silicon sensor for the compact muon solenoid tracker. Control of the fabrication process

    International Nuclear Information System (INIS)

    Manolescu, Florentina; Mihul, Alexandru; Macchiolo, Anna

    2005-01-01

    The Compact Muon Solenoid (CMS) is one of the experiments at the Large Hadron Collider (LHC) under construction at CERN. The inner tracking system of this experiment consists of the world largest Silicon Strip Tracker (SST). In total, 24,244 silicon sensors are implemented covering an area of 206 m 2 . To construct this large system and to ensure its functionality for the full lifetime of ten years under the hard LHC condition, a detailed quality assurance program has been developed. This paper describes the strategy of the Process Qualification Control to monitor the stability of the fabrication process throughout the production phase and the results obtained are shown. (authors)

  3. Transparent silicon strip sensors for the optical alignment of particle detector systems

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-05-01

    Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

  4. Trends in laser micromachining

    Science.gov (United States)

    Gaebler, Frank; van Nunen, Joris; Held, Andrew

    2016-03-01

    Laser Micromachining is well established in industry. Depending on the application lasers with pulse length from μseconds to femtoseconds and wavelengths from 1064nm and its harmonics up to 5μm or 10.6μm are used. Ultrafast laser machining using pulses with pico or femtosecond duration pulses is gaining traction, as it offers very precise processing of materials with low thermal impact. Large-scale industrial ultrafast laser applications show that the market can be divided into various sub segments. One set of applications demand low power around 10W, compact footprint and are extremely sensitive to the laser price whilst still demanding 10ps or shorter laser pulses. A second set of applications are very power hungry and only become economically feasible for large scale deployments at power levels in the 100+W class. There is also a growing demand for applications requiring fs-laser pulses. In our presentation we would like to describe these sub segments by using selected applications from the automotive and electronics industry e.g. drilling of gas/diesel injection nozzles, dicing of LED substrates. We close the presentation with an outlook to micromachining applications e.g. glass cutting and foil processing with unique new CO lasers emitting 5μm laser wavelength.

  5. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  6. 1 kHz 2D Visual Motion Sensor Using 20 × 20 Silicon Retina Optical Sensor and DSP Microcontroller.

    Science.gov (United States)

    Liu, Shih-Chii; Yang, MinHao; Steiner, Andreas; Moeckel, Rico; Delbruck, Tobi

    2015-04-01

    Optical flow sensors have been a long running theme in neuromorphic vision sensors which include circuits that implement the local background intensity adaptation mechanism seen in biological retinas. This paper reports a bio-inspired optical motion sensor aimed towards miniature robotic and aerial platforms. It combines a 20 × 20 continuous-time CMOS silicon retina vision sensor with a DSP microcontroller. The retina sensor has pixels that have local gain control and adapt to background lighting. The system allows the user to validate various motion algorithms without building dedicated custom solutions. Measurements are presented to show that the system can compute global 2D translational motion from complex natural scenes using one particular algorithm: the image interpolation algorithm (I2A). With this algorithm, the system can compute global translational motion vectors at a sample rate of 1 kHz, for speeds up to ±1000 pixels/s, using less than 5 k instruction cycles (12 instructions per pixel) per frame. At 1 kHz sample rate the DSP is 12% occupied with motion computation. The sensor is implemented as a 6 g PCB consuming 170 mW of power.

  7. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  8. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn

    2017-02-15

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10{sup 15} cm{sup -2}, using laser light with a wavelength of 1052 nm.

  9. Edge-TCT for the investigation of radiation damaged silicon strip sensors

    International Nuclear Information System (INIS)

    Feindt, Finn

    2017-02-01

    The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and scanned across the polished cut edge of a sensor. Electron-hole pairs are generated along the light beam in the sensor. These charge carriers drift in the electric field and induce transient currents on the sensor electrodes. The current transients are analyzed as a function of the applied voltage, temperature, absorbed dose and position of the laser-light focus, in order to determine the the drift velocities, electric field and the charge collection in the strip sensor. In the scope of this work, a new edge-TCT setup is commissioned, a procedure for the polishing of the cut edge is implemented and a method to position the focus of the laser light with respect to the sensor is developed. First edge-TCT measurements are performed on non-irradiated, 285 μm thick n-type strip sensors, and the pulse shape and charge collection is studied under different conditions. Furthermore, the prompt current of the transients is extracted, which is the first step towards the determination of the electric field. A new method to measure the attenuation of light in silicon is tested on a non-irradiated sensor and on sensors irradiated with up to a 1 MeV neutron equivalent fluence of 1.14 x 10"1"5 cm"-"2, using laser light with a wavelength of 1052 nm.

  10. Novel 3D silicon sensors for neutron detection

    International Nuclear Information System (INIS)

    Mendicino, R; Betta, G-F Dalla; Palma, M Dalla; Perillo, E; Povoli, M; Quaranta, A; Boscardin, M; Ronchin, S; Zorzi, N; Carturan, S; Cinausero, M; Gramegna, F; Marchi, T; , University of Padova, Via Marzolo 8, 35131 Padova (Italy))" data-affiliation=" (Department of Physics and Astronomy ''G.Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy))" >Collazuol, G

    2014-01-01

    In this paper we report a novel 3D sensor structure to be used as a neutron detector in combination with an organic converter material based on polysiloxane. The first prototypes of the proposed device are presented, with emphasis on the experimental characterization. Selected results from the functional tests (with alpha particle source and pulsed laser scans) are discussed with the aid of TCAD simulations

  11. Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

    International Nuclear Information System (INIS)

    Li, Hung-Hsien; Yang, Chi-En; Kei, Chi-Chung; Su, Chung-Yi; Dai, Wei-Syuan; Tseng, Jung-Kuei; Yang, Po-Yu; Chou, Jung-Chuan; Cheng, Huang-Chung

    2013-01-01

    An extended-gate field-effect transistor (EGFET) of coaxial-structured ZnO/silicon nanowires as pH sensor was demonstrated in this paper. The oriented 1-μm-long silicon nanowires with the diameter of about 50 nm were vertically synthesized by the electroless metal deposition method at room temperature and were sequentially capped with the ZnO films using atomic layer deposition at 50 °C. The transfer characteristics (I DS –V REF ) of such ZnO/silicon nanowire EGFET sensor exhibited the sensitivity and linearity of 46.25 mV/pH and 0.9902, respectively for the different pH solutions (pH 1–pH 13). In contrast to the ZnO thin-film ones, the ZnO/silicon nanowire EGFET sensor achieved much better sensitivity and superior linearity. It was attributed to a high surface-to-volume ratio of the nanowire structures, reflecting a larger effective sensing area. The output voltage and time characteristics were also measured to indicate good reliability and durability for the ZnO/silicon nanowires sensor. Furthermore, the hysteresis was 9.74 mV after the solution was changed as pH 7 → pH 3 → pH 7 → pH 11 → pH 7. - Highlights: ► Coaxial-structured ZnO/silicon nanowire EGFET was demonstrated as pH sensor. ► EMD and ALD methods were proposed to fabricate ZnO/silicon nanowires. ► ZnO/silicon nanowire EGFET sensor achieved better sensitivity and linearity. ► ZnO/silicon nanowire EGFET sensor had good reliability and durability

  12. Micromachined ultrasonic droplet generator based on a liquid horn structure

    Science.gov (United States)

    Meacham, J. M.; Ejimofor, C.; Kumar, S.; Degertekin, F. L.; Fedorov, A. G.

    2004-05-01

    A micromachined ultrasonic droplet generator is developed and demonstrated for drop-on-demand fluid atomization. The droplet generator comprises a bulk ceramic piezoelectric transducer for ultrasound generation, a reservoir for the ejection fluid, and a silicon micromachined liquid horn structure as the nozzle. The nozzles are formed using a simple batch microfabrication process that involves wet etching of (100) silicon in potassium hydroxide solution. Device operation is demonstrated by droplet ejection of water through 30 μm orifices at 1.49 and 2.30 MHz. The finite-element simulations of the acoustic fields in the cavity and electrical impedance of the device are in agreement with the measurements and indicate that the device utilizes cavity resonances in the 1-5 MHz range in conjunction with acoustic wave focusing by the pyramidally shaped nozzles to achieve low power operation.

  13. Optimization and validation of highly selective microfluidic integrated silicon nanowire chemical sensor

    Science.gov (United States)

    Ehfaed, Nuri. A. K. H.; Bathmanathan, Shillan A. L.; Dhahi, Th S.; Adam, Tijjani; Hashim, Uda; Noriman, N. Z.

    2017-09-01

    The study proposed characterization and optimization of silicon nanosensor for specific detection of heavy metal. The sensor was fabricated in-house and conventional photolithography coupled with size reduction via dry etching process in an oxidation furnace. Prior to heavy metal heavy metal detection, the capability to aqueous sample was determined utilizing serial DI water at various. The sensor surface was surface modified with Organofunctional alkoxysilanes (3-aminopropyl) triethoxysilane (APTES) to create molecular binding chemistry. This has allowed interaction between heavy metals being measured and the sensor component resulting in increasing the current being measured. Due to its, excellent detection capabilities, this sensor was able to identify different group heavy metal species. The device was further integrated with sub-50 µm for chemical delivery.

  14. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  15. Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

    CERN Document Server

    Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hoermann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, Kirill; Regenfus, Christian; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

    2006-01-01

    We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

  16. Piezoresistive silicon thin film sensor array for biomedical applications

    International Nuclear Information System (INIS)

    Alpuim, P.; Correia, V.; Marins, E.S.; Rocha, J.G.; Trindade, I.G.; Lanceros-Mendez, S.

    2011-01-01

    N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor - 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 o C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 to 100 μm and thickness of 120 nm were defined in an array by reactive ion etching. Metallic pads, forming ohmic contacts to the sensing elements, were defined by a lift-off process. A readout circuit for the array consisting in a mutiplexer on each row and column of the matrix is proposed. The digital data will be processed, interpreted and stored internally by an ultra low-power micro controller, also responsible for the communication of two-way wireless data, e.g. from inside to outside the human body.

  17. Photonic porous silicon as a pH sensor.

    Science.gov (United States)

    Pace, Stephanie; Vasani, Roshan B; Zhao, Wei; Perrier, Sébastien; Voelcker, Nicolas H

    2014-01-01

    Chronic wounds do not heal within 3 months, and during the lengthy healing process, the wound is invariably exposed to bacteria, which can colonize the wound bed and form biofilms. This alters the wound metabolism and brings about a change of pH. In this work, porous silicon photonic films were coated with the pH-responsive polymer poly(2-diethylaminoethyl acrylate). We demonstrated that the pH-responsive polymer deposited on the surface of the photonic film acts as a barrier to prevent water from penetrating inside the porous matrix at neutral pH. Moreover, the device demonstrated optical pH sensing capability visible by the unaided eye.

  18. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Science.gov (United States)

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  19. Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bergauer, T.; Brondolin, E. [Institut fuer Hochenergiephysik, Vienna (Austria); and others

    2017-08-15

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ{sub eq} = 2 x 10{sup 16} cm{sup -2}, and an ionising dose of ∼5 MGy after an integrated luminosity of 3000 fb{sup -1}. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2} are shown. (orig.)

  20. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Science.gov (United States)

    Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  1. Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria)], E-mail: dragicevic@oeaw.ac.at; Frey, M. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Grabiec, P.; Grodner, M. [Institute of Electron Technology (ITE), Warsaw (Poland); Haensel, S. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Hartmann, F.; Hoffmann, K.-H. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Hrubec, J.; Krammer, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Kucharski, K. [Institute of Electron Technology (ITE), Warsaw (Poland); Macchiolo, A. [Max-Planck-Institut fuer Physik (MPI), Munich (Germany); Marczewski, J. [Institute of Electron Technology (ITE), Warsaw (Poland)

    2009-01-01

    Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

  2. \\title{Development of Radiation Damage Models for Irradiated Silicon Sensors Using TCAD Tools}

    CERN Document Server

    Bhardwaj, Ashutosh; Lalwani, Kavita; Ranjan, Kirti; Printz, Martin; Ranjeet, Ranjeet; Eber, Robert; Eichhorn, Thomas; Peltola, Timo Hannu Tapani

    2014-01-01

    Abstract. During the high luminosity upgrade of the LHC (HL-LHC) the CMS tracking system will face a more intense radiation environment than the present system was designed for. In order to design radiation tolerant silicon sensors for the future CMS tracker upgrade it is fundamental to complement the measurement with device simulation. This will help in both the understanding of the device performance and in the optimization of the design parameters. One of the important ingredients of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this paper we will discuss the development of a radiation damage model by using commercial TCAD packages (Silvaco and Synopsys), which successfully reproduce the recent measurements like leakage current, depletion voltage, interstrip capacitance and interstrip resistance, and provides an insight into the performance of irradiated silicon strip sensors.

  3. Just-in-Time Correntropy Soft Sensor with Noisy Data for Industrial Silicon Content Prediction.

    Science.gov (United States)

    Chen, Kun; Liang, Yu; Gao, Zengliang; Liu, Yi

    2017-08-08

    Development of accurate data-driven quality prediction models for industrial blast furnaces encounters several challenges mainly because the collected data are nonlinear, non-Gaussian, and uneven distributed. A just-in-time correntropy-based local soft sensing approach is presented to predict the silicon content in this work. Without cumbersome efforts for outlier detection, a correntropy support vector regression (CSVR) modeling framework is proposed to deal with the soft sensor development and outlier detection simultaneously. Moreover, with a continuous updating database and a clustering strategy, a just-in-time CSVR (JCSVR) method is developed. Consequently, more accurate prediction and efficient implementations of JCSVR can be achieved. Better prediction performance of JCSVR is validated on the online silicon content prediction, compared with traditional soft sensors.

  4. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  5. arXiv Signal coupling to embedded pitch adapters in silicon sensors

    CERN Document Server

    Artuso, M.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

    2018-01-01

    We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

  6. A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

    International Nuclear Information System (INIS)

    Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

    2013-01-01

    We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

  7. Design and tests of the silicon sensors for the ZEUS micro vertex detector

    International Nuclear Information System (INIS)

    Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

    2003-01-01

    To fully exploit the HERA-II upgrade, the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon μ-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 μm, with five intermediate strips (20 μm strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and 60 Co photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1x10 13 1 MeV equivalent neutrons/cm 2 ) are well described by empirical formulae for bulk damage. The 60 Co photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO 2 -Si interface, a large shift of the flatband voltage and a decrease of the hole mobility

  8. Micromachined millimeter-wave photonic band-gap crystals

    International Nuclear Information System (INIS)

    Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

    1994-01-01

    We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

  9. Manufacture of Radio Frequency Micromachined Switches with Annealing

    OpenAIRE

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-01

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

  10. Close up of the pick and place tool carrying a dummy silicon sensor.

    CERN Multimedia

    Bernd Surrow

    1999-01-01

    The gantry positioning head contains a vacuum pick-up system thatallows several different pick-up tools to be used. This one isdesigned to pick up the silicon sensors. The pick-up tool containsa pressure sensitive contact which can stop the motion of the machine when the tool touches a fixed object. The shiny cylinderis the end of the microscope optics of the CCD camera.

  11. Silicon telescope for prototype sensor characterisation using particle beam and cosmic rays

    CERN Multimedia

    Fu, Jinlin

    2016-01-01

    We present the design and the performance of a silicon strip telescope that we have built and recently used as reference tracking system for prototype sensor characterisation. The telescope was operated on beam at the CERN SPS and also using cosmic rays in the laboratory. We will describe the data acquisition system, based on a custom electronic board that we have developed, and the online monitoring system to control the quality of the data in real time.

  12. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  13. CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

    Science.gov (United States)

    Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

    2016-09-01

    A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  14. Quality assurance of the silicon microstrip sensors for the CBM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Panasenko, Iaroslav [Physikalisches Institut, Universitaet Tuebingen (Germany); Institute for Nuclear Research, Kiev (Ukraine); Larionov, Pavel [University of Frankfurt (Germany); Collaboration: CBM-Collaboration

    2016-07-01

    The CBM experiment at FAIR will investigate the properties of nuclear matter at extreme conditions created in ultrarelativistic heavy-ion collisions. Its core detector - the Silicon Tracking System (STS) - will determine the momentum of charged particles from beam-target interactions. The track multiplicity will reach up to 700 within the detector aperture covering the polar angle 2.5 and 25 . High track density as well as stringent requirements to the momentum resolution (∝1%) require a system with high channel granularity and low material budget. The STS will be constructed of about 1200 double-sided silicon microstrip sensors with 58 μm pitch and a total area of ∝4 m{sup 2} with all together 2.1 million channels will be read out. In this talk the quality assurance of double-sided silicon microstrip sensors is discussed. This includes both visual and electrical characterization. For this purpose dedicated equipment has been set up in the clean rooms of the GSI Detector Laboratory and at Tuebingen University. Results of the electrical characterization of prototype microstrip sensors CBM06 are presented.

  15. Chemical Gas Sensors for Aeronautic and Space Applications 2

    Science.gov (United States)

    Hunter, G. W.; Chen, L. Y.; Neudeck, P. G.; Knight, D.; Liu, C. C.; Wu, Q. H.; Zhou, H. J.; Makel, D.; Liu, M.; Rauch, W. A.

    1998-01-01

    Aeronautic and Space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Areas of most interest include launch vehicle safety monitoring emission monitoring and fire detection. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensor is based on progress two types of technology: 1) Micro-machining and micro-fabrication technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this micro-fabricated gas sensor technology make this area of sensor development a field of significant interest.

  16. Chemical Gas Sensors for Aeronautics and Space Applications III

    Science.gov (United States)

    Hunter, G. W.; Neudeck, P. G.; Chen, L. Y.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, Z.; Hammond, J.; Makel, D.; Liu, M.; hide

    1999-01-01

    Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Areas of interest include launch vehicle safety monitoring, emission monitoring, and fire detection. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this area of sensor development a field of significant interest.

  17. FISH & CHIPS: Single Chip Silicon MEMS CTDL Salinity, Temperature, Pressure and Light sensor for use in fisheries research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Hansen, Ole; Thomsen, Erik Vilain

    2005-01-01

    A single-chip silicon MEMS CTDL multi sensor for use in aqueous environments is presented. The new sensor chip consists of a conductivity sensor based on platinum electrodes (C), an ion-implanted thermistor temperature sensor (T), a piezoresistive pressure sensor (D for depth/pressure) and an ion......-implanted p-n junction light sensor (L). The design and fabrication process is described. A temperature sensitivity of 0.8 × 10-3K-1 has been measured and detailed analysis of conductivity measurement data shows a cell constant of 81 cm-1....

  18. Amorphous silicon-based PINIP structure for color sensor

    International Nuclear Information System (INIS)

    Zhang, S.; Raniero, L.; Fortunato, E.; Ferreira, I.; Aguas, H.; Martins, R.

    2005-01-01

    A series of hydrogenated amorphous silicon carbide (a-SiC:H) films was prepared by plasma enhanced chemical vapor deposition (PECVD) technology. The microstructure and photoelectronic properties of the film are investigated by absorption spectra (in the ultraviolet to near-infrared range) and Fourier transform infrared (FTIR) spectra. The results show that good band gap controllability (1.83-3.64 eV) was achieved by adjusting the plasma parameters. In the energy range around 2.1 eV, the a-Si 1-x C x :H films exhibit good photosensitivity, opening the possibility to use this wide band gap material for device application, especially when blue color detectors are concerned. A multilayer device with a stack of glass/TCO(ZnO:Ga)/P(a-SiC:H)/I(a-SiC:H)/N(a-Si:H)/I(a-Si:H)/P(a-Si:H)/Al has been prepared. The devices can detect blue and red colors under different bias voltages. The optimization of the device, especially the film thickness and the band gap offset used to achieve better detectivity, is also done in this work

  19. Silicon Sensor Development for the CMS Tracker Upgrade

    CERN Document Server

    Auzinger, Georg; Elliott-Peisert, Anna

    The Large Hadron Collider at the European Council for Nuclear Research in Geneva is scheduled to undergo a major luminosity upgrade after its lifetime of ten years of operation around the year 2020, to maximize its scientific discovery potential. The total integrated luminosity will be increased by a factor of ten, which will dramatically change the conditions under which the four large detectors at the LHC will have to operate. The Compact Muon Solenoid, which has contributed to the recent discovery of a new, Higgs-like boson is one of them. Its innermost part -- the so-called tracker -- is a high-precision instrument that measures the created particles' trajectories by means of silicon detectors. With a total surface of more than 200 square-meters it is the largest device of its kind ever built. The increase in instantaneous luminosity in the upgraded LHC will lead to a dramatically increased track density at the interaction points of the colliding beams and thus also to a much more hostile radiation env...

  20. X-ray imaging characterization of active edge silicon pixel sensors

    International Nuclear Information System (INIS)

    Ponchut, C; Ruat, M; Kalliopuska, J

    2014-01-01

    The aim of this work was the experimental characterization of edge effects in active-edge silicon pixel sensors, in the frame of X-ray pixel detectors developments for synchrotron experiments. We produced a set of active edge pixel sensors with 300 to 500 μm thickness, edge widths ranging from 100 μm to 150 μm, and n or p pixel contact types. The sensors with 256 × 256 pixels and 55 × 55 μm 2 pixel pitch were then bump-bonded to Timepix readout chips for X-ray imaging measurements. The reduced edge widths makes the edge pixels more sensitive to the electrical field distribution at the sensor boundaries. We characterized this effect by mapping the spatial response of the sensor edges with a finely focused X-ray synchrotron beam. One of the samples showed a distortion-free response on all four edges, whereas others showed variable degrees of distortions extending at maximum to 300 micron from the sensor edge. An application of active edge pixel sensors to coherent diffraction imaging with synchrotron beams is described

  1. Modeling of an Aged Porous Silicon Humidity Sensor Using ANN Technique

    Directory of Open Access Journals (Sweden)

    Tarikul ISLAM

    2006-10-01

    Full Text Available Porous silicon (PS sensor based on capacitive technique used for measuring relative humidity has the advantages of low cost, ease of fabrication with controlled structure and CMOS compatibility. But the response of the sensor is nonlinear function of humidity and suffers from errors due to aging and stability. One adaptive linear (ADALINE ANN model has been developed to model the behavior of the sensor with a view to estimate these errors and compensate them. The response of the sensor is represented by third order polynomial basis function whose coefficients are determined by the ANN technique. The drift in sensor output due to aging of PS layer is also modeled by adapting the weights of the polynomial function. ANN based modeling is found to be more suitable than conventional physical modeling of PS humidity sensor in changing environment and drift due to aging. It helps online estimation of nonlinearity as well as monitoring of the fault of the PS humidity sensor using the coefficients of the model.

  2. Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

    Science.gov (United States)

    Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

    2018-01-26

    A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

  3. Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges

    Science.gov (United States)

    Riondet, J.; Coustou, A.; Aubert, H.; Pons, P.; Lavayssière, M.; Luc, J.; Lefrançois, A.

    2017-11-01

    Available commercial piezoelectric pressure sensors are not able to accurately reproduce the ultra-fast transient pressure occurring during an air blast experiment. In this communication a new pressure sensor prototype based on a miniature silicon membrane and piezoresistive gauges is reported for significantly improving the performances in terms of time response. Simulation results demonstrate the feasibility of a pressure transducer having a fundamental resonant frequency almost ten times greater than the commercial piezoelectric sensors one. The sensor uses a 5μm-thick SOI membrane and four P-type silicon gauges (doping level ≅ 1019 at/cm3) in Wheatstone bridge configuration. To obtain a good trade-off between the fundamental mechanical resonant frequency and pressure sensitivity values, the typical dimension of the rectangular membrane is fixed to 30μm x 90μm with gauge dimension of 1μm x 5μm. The achieved simulated mechanical resonant frequency of these configuration is greater than 40MHz with a sensitivity of 0.04% per bar.

  4. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    Duun, Sune; Haahr, Rasmus G; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz -1/2 cm -1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  5. Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

    CERN Document Server

    Dierlamm, Alexander Hermann

    2012-01-01

    During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

  6. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor

    Directory of Open Access Journals (Sweden)

    Raffaele Caroselli

    2017-12-01

    Full Text Available Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU, which allowed us to directly detect refractive index variations in the 10−7 RIU range.

  7. Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

    Science.gov (United States)

    Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

    2017-12-05

    Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

  8. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    Directory of Open Access Journals (Sweden)

    Sangchoel Kim

    2013-10-01

    Full Text Available We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5 layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

  9. First characterization of the SPADnet sensor: a digital silicon photomultiplier for PET applications

    Science.gov (United States)

    Gros-Daillon, E.; Maingault, L.; André, L.; Reboud, V.; Verger, L.; Charbon, E.; Bruschini, C.; Veerappan, C.; Stoppa, D.; Massari, N.; Perenzoni, M.; Braga, L. H. C.; Gasparini, L.; Henderson, R. K.; Walker, R.; East, S.; Grant, L.; Jatekos, B.; Lorincz, E.; Ujhelyi, F.; Erdei, G.; Major, P.; Papp, Z.; Nemeth, G.

    2013-12-01

    Silicon Photomultipliers have the ability to replace photomultiplier tubes when used as light sensors in scintillation gamma-ray detectors. Their timing properties, compactness, and magnetic field compatibility make them interesting for use in Time-of-Flight Magnetic Resonance Imaging compatible Positron Emission Tomography. In this paper, we present a new fully digital Single Photon Avalanche Diode (SPAD) based detector fabricated in CMOS image sensor technology. It contains 16x8 pixels with a pitch of 610x571.2 μm2. The Dark Count Rate and the Photon Detection Probability of each SPAD has been measured and the homogeneity of these parameters in the entire 92000 SPAD array is shown. The sensor has been optically coupled to a single LYSO needle and a LYSO array. The scintillator crystal was irradiated with several gamma sources and the resulting images and energy spectra are presented.

  10. Characterization of silicon microstrip sensors with a pulsed infrared laser system for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Pradeep [Goethe Univ., Frankfurt (Germany); GSI (Germany); Eschke, Juergen [GSI (Germany); FAIR (Germany); Collaboration: CBM-Collaboration

    2014-07-01

    The Silicon Tracking System (STS) for the Compressed Baryonic Matter (CBM) experiment at FAIR will comprise more than 1200 double-sided silicon microstrip sensors. For the quality assurance of the prototype sensors a laser test system has been built up. The aim of the sensor scans with the pulsed infrared laser system is to determine the charge sharing between strips and to measure the uniformity of the sensor response over the whole active area. The laser system measures the sensor response in an automatized procedure at several thousand positions across the sensor with focused infrared laser light (σ∼15 μm, λ=1060 nm). The duration (5 ns) and power (few mW) of the laser pulses are selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24k electrons, which is similar to the charge created by minimum ionizing particles in these sensors. Results from the characterization of monolithic active pixel sensors, to understand the spot-size of the laser, and laser scans for different sensors are presented.

  11. Impact of low-dose electron irradiation on n{sup +}p silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2015-12-11

    The response of n{sup +}p silicon strip sensors to electrons from a {sup 90}Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n{sup +} strips were studied. The electrons from the {sup 90}Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO{sub 2} at the maximum was about 50 Gy(SiO{sub 2})/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO{sub 2} by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n{sup +}p strip sensors is discussed.

  12. A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

    2008-01-01

    A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

  13. Microencapsulation of silicon cavities using a pulsed excimer laser

    KAUST Repository

    Sedky, Sherif M.; Tawfik, Hani H.; Ashour, Mohamed; Graham, Andrew B.; Provine, John W.; Wang, Qingxiao; Zhang, Xixiang; Howe, Roger T.

    2012-01-01

    This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal

  14. Chemical Gas Sensors for Aeronautic and Space Applications

    Science.gov (United States)

    Hunter, Gary W.; Chen, Liang-Yu; Neudeck, Philip G.; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai; Zhou, Huan-Jun

    1997-01-01

    Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Two areas of particular interest are safety monitoring and emission monitoring. In safety monitoring, detection of low concentrations of hydrogen at potentially low temperatures is important while for emission monitoring the detection of nitrogen oxides, hydrogen, hydrocarbons and oxygen is of interest. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: (1) Micromachining and microfabrication technology to fabricate miniaturized sensors. (2) The development of high temperature semiconductors, especially silicon carbide. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this general area of sensor development a field of significant interest.

  15. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    Science.gov (United States)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Suryo Wasisto, Hutomo; Peiner, Erwin

    2016-10-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor (Q) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10-6. This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor.

  16. Asymmetric resonance frequency analysis of in-plane electrothermal silicon cantilevers for nanoparticle sensors

    International Nuclear Information System (INIS)

    Bertke, Maik; Hamdana, Gerry; Wu, Wenze; Marks, Markus; Wasisto, Hutomo Suryo; Peiner, Erwin

    2016-01-01

    The asymmetric resonance frequency analysis of silicon cantilevers for a low-cost wearable airborne nanoparticle detector (Cantor) is described in this paper. The cantilevers, which are operated in the fundamental in-plane resonance mode, are used as a mass-sensitive microbalance. They are manufactured out of bulk silicon, containing a full piezoresistive Wheatstone bridge and an integrated thermal heater for reading the measurement output signal and stimulating the in-plane excitation, respectively. To optimize the sensor performance, cantilevers with different cantilever geometries are designed, fabricated and characterized. Besides the resonance frequency, the quality factor ( Q ) of the resonance curve has a high influence concerning the sensor sensitivity. Because of an asymmetric resonance behaviour, a novel fitting function and method to extract the Q is created, different from that of the simple harmonic oscillator (SHO). For testing the sensor in a long-term frequency analysis, a phase- locked loop (PLL) circuit is employed, yielding a frequency stability of up to 0.753 Hz at an Allan variance of 3.77 × 10 -6 . This proposed asymmetric resonance frequency analysis method is expected to be further used in the process development of the next-generation Cantor. (paper)

  17. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  18. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    Energy Technology Data Exchange (ETDEWEB)

    Ahsan, M.; Bolton, T.; Carnes, K.; /Kansas State U.; Demarteau, M.; /Fermilab; Demina, R.; /Rochester U.; Gray, T.; /Kansas State U.; Korjenevski, S.; /Rochester U.; Lehner, F.; /Zurich U.; Lipton, R.; Mao, H.S.; /Fermilab; McCarthy, R.; /SUNY, Stony Brook /Kansas State U. /Fermilab

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10{sup 14} p/cm{sup 2} at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  19. Measurements on irradiated L1 sensor prototypes for the D0 Run IIb silicon detector project

    International Nuclear Information System (INIS)

    Ahsan, M.; Bolton, T.; Carnes, K.; Demarteau, M.; Demina, R.; Gray, T.; Korjenevski, S.; Lehner, F.; Lipton, R.; Mao, H.S.; McCarthy, R.

    2010-01-01

    We report on irradiation studies of Hamamatsu prototype silicon microstrip detectors for layer 1 of the D0 upgrade project for Run IIb. The irradiation was carried out with 10 MeV protons up to proton fluence of 10 14 p/cm 2 at the J.R. Macdonald Laboratory, Manhatten, KS. The flux calibration was carefully checked using different dose normalization techniques. The results based on the obtained sensor leakage currents after irradiation show that the NIEL scaling hypothesis for low energy protons has to be applied with great care. We observe 30-40% less radiation damage in silicon for 10 MeV proton exposure than is expected from the predicted NIEL scaling.

  20. A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

    International Nuclear Information System (INIS)

    Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

    2008-01-01

    This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

  1. Piezoresistive Composite Silicon Dioxide Nanocantilever Surface Stress Sensor: Design and Optimization.

    Science.gov (United States)

    Mathew, Ribu; Sankar, A Ravi

    2018-05-01

    In this paper, we present the design and optimization of a rectangular piezoresistive composite silicon dioxide nanocantilever sensor. Unlike the conventional design approach, we perform the sensor optimization by not only considering its electro-mechanical response but also incorporating the impact of self-heating induced thermal drift in its terminal characteristics. Through extensive simulations first we comprehend and quantify the inaccuracies due to self-heating effect induced by the geometrical and intrinsic parameters of the piezoresistor. Then, by optimizing the ratio of electrical sensitivity to thermal sensitivity defined as the sensitivity ratio (υ) we improve the sensor performance and measurement reliability. Results show that to ensure υ ≥ 1, shorter and wider piezoresistors are better. In addition, it is observed that unlike the general belief that high doping concentration of piezoresistor reduces thermal sensitivity in piezoresistive sensors, to ensure υ ≥ 1 doping concentration (p) should be in the range: 1E18 cm-3 ≤ p ≤ 1E19 cm-3. Finally, we provide a set of design guidelines that will help NEMS engineers to optimize the performance of such sensors for chemical and biological sensing applications.

  2. Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

    Directory of Open Access Journals (Sweden)

    Xiaohui Du

    2016-01-01

    Full Text Available A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

  3. An edge-TCT setup for the investigation of radiation damaged silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Feindt, Finn; Scharf, Christian; Garutti, Erika; Klanner, Robert [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The aim of this work is to measure the electric field, drift velocity and charge collection of electrons and holes in radiation-damaged silicon strip sensors. For this purpose the edge Transient Current Technique (TCT) is employed. In contrast to conventional TCT, this method requires light from a sub-ns pulsed, infrared laser to be focused to a μm-size spot and scanned across the polished edge of a strip sensor. Thus electron-hole pairs are generated at a known depth in the sensor. Electrons and holes drift in the electric field and induce transient currents on the sensor electrodes. The current wave forms are analyzed as a function of the applied voltage and the position of the laser focus in order to determine the electric field, the drift velocities and the charge collection. In this talk the setup and the procedure for polishing the sensor edge are described, and first results, regarding the measurement of the laser light focus are presented.

  4. Transparent amorphous silicon sensors for the alignment system of particle detectors

    International Nuclear Information System (INIS)

    Fernandez, M.G.

    1999-01-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  5. Transparent amorphous silicon sensors for the alignment system of particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, M.G. [Ciemat, Madrid (Spain)

    1999-07-01

    In this document we will present a historical review of ALMY sensors. The starting point was 1993 when the first prototypes were built. A description of their performance at this early stage will make clear which features have to be modified in order to cope with the stringent requirements imposed by ATLAS and CMS. As time went by, the problems were fixed and nowadays a fine working and operational ALMY sensor has been built. The following sections of this paper show how these aims were achieved. In section 2 the reader will know where and when ALMY sensors were born. It explains some reasons why amorphous silicon was chosen as photosensitive material. Section 3 intends to describe the morphology and physical properties of this device. Next sections present results from the diverse characterizations from ATLAS and CMS. Particularly, section 4 deals with the uniformity and spatial resolution of the first prototypes. Details on the light transmission after one sensor are given in section 5. The different radiation hardness tests for ALMYs are introduced in section 6. The propagation of a plane wave through the different layers helps to understand the origin of the systematics found in the first prototypes (section 7). The performance of the new ALMY sensors is presented in section 8. (author)

  6. Two-dimensional wavelet transform feature extraction for porous silicon chemical sensors.

    Science.gov (United States)

    Murguía, José S; Vergara, Alexander; Vargas-Olmos, Cecilia; Wong, Travis J; Fonollosa, Jordi; Huerta, Ramón

    2013-06-27

    Designing reliable, fast responding, highly sensitive, and low-power consuming chemo-sensory systems has long been a major goal in chemo-sensing. This goal, however, presents a difficult challenge because having a set of chemo-sensory detectors exhibiting all these aforementioned ideal conditions are still largely un-realizable to-date. This paper presents a unique perspective on capturing more in-depth insights into the physicochemical interactions of two distinct, selectively chemically modified porous silicon (pSi) film-based optical gas sensors by implementing an innovative, based on signal processing methodology, namely the two-dimensional discrete wavelet transform. Specifically, the method consists of using the two-dimensional discrete wavelet transform as a feature extraction method to capture the non-stationary behavior from the bi-dimensional pSi rugate sensor response. Utilizing a comprehensive set of measurements collected from each of the aforementioned optically based chemical sensors, we evaluate the significance of our approach on a complex, six-dimensional chemical analyte discrimination/quantification task problem. Due to the bi-dimensional aspects naturally governing the optical sensor response to chemical analytes, our findings provide evidence that the proposed feature extractor strategy may be a valuable tool to deepen our understanding of the performance of optically based chemical sensors as well as an important step toward attaining their implementation in more realistic chemo-sensing applications. Copyright © 2013 Elsevier B.V. All rights reserved.

  7. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  8. Optimizing the quality of silicon strip sensors produced by Infineon Technologies Austria AG

    International Nuclear Information System (INIS)

    Treberspurg, W; Bergauer, T; Dragicevic, M; König, A; Bartl, U; Hacker, J; Wübben, T

    2014-01-01

    The tracking systems of most modern particle physics experiments are realized by silicon based sensors. The size of such systems has continuously increased and nowadays a sensitive area of several 100 m 2 has to be covered. This large amount of sensors might exceed the production capabilities of existing companies and institutes. Therefore the Institute of High Energy Physics of the Austrian Academy of Sciences (HEPHY) and the European semiconductor manufacturer Infineon Technologies Austria AG developed together a production process for p-on-n strip sensors. Although the first prototype run has shown a promising quality, it has been observed that weak strips exist, which are mainly located at distinctive areas on each wafer. At these areas the affected parameters are correlated to each other. A similar behaviour could be reproduced with a smaller second batch, whose sensors have been used for further analysis and advanced measurements. This paper sums up the characteristic behaviour of the specific effect and presents different possibilities how to cure the sensors. The systematic accumulation of weak strips can be traced back to a specific operation during the fabrication process. All data strongly indicate that the effect is caused by local charging effects on an isolating layer

  9. Micromachined tunable metamaterials: a review

    International Nuclear Information System (INIS)

    Liu, A Q; Zhu, W M; Tsai, D P; Zheludev, N I

    2012-01-01

    This paper reviews micromachined tunable metamaterials, whereby the tuning capabilities are based on the mechanical reconfiguration of the lattice and/or the metamaterial element geometry. The primary focus of this review is the feasibility of the realization of micromachined tunable metamaterials via structure reconfiguration and the current state of the art in the fabrication technologies of structurally reconfigurable metamaterial elements. The micromachined reconfigurable microstructures not only offer a new tuning method for metamaterials without being limited by the nonlinearity of constituent materials, but also enable a new paradigm of reconfigurable metamaterial-based devices with mechanical actuations. With recent development in nanomachining technology, it is possible to develop structurally reconfigurable metamaterials with faster tuning speed, higher density of integration and more flexible choice of the working frequencies. (review article)

  10. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  11. Potential of silicon nanowires structures as nanoscale piezoresistors in mechanical sensors

    International Nuclear Information System (INIS)

    Messina, M; Njuguna, J

    2012-01-01

    This paper presents the design of a single square millimeter 3-axial accelerometer for bio-mechanics measurements that exploit the potential of silicon nanowires structures as nanoscale piezoresistors. The main requirements of this application are miniaturization and high measurement accuracy. Nanowires as nanoscale piezoresistive devices have been chosen as sensing element, due to their high sensitivity and miniaturization achievable. By exploiting the electro-mechanical features of nanowires as nanoscale piezoresistors, the nominal sensor sensitivity is overall boosted by more than 30 times. This approach allows significant higher accuracy and resolution with smaller sensing element in comparison with conventional devices without the need of signal amplification.

  12. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  13. Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

    2013-08-01

    A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

  14. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project

    Science.gov (United States)

    Ellinger, Frank; Mikolajick, Thomas; Fettweis, Gerhard; Hentschel, Dieter; Kolodinski, Sabine; Warnecke, Helmut; Reppe, Thomas; Tzschoppe, Christoph; Dohl, Jan; Carta, Corrado; Fritsche, David; Tretter, Gregor; Wiatr, Maciej; Detlef Kronholz, Stefan; Mikalo, Ricardo Pablo; Heinrich, Harald; Paulo, Robert; Wolf, Robert; Hübner, Johannes; Waltsgott, Johannes; Meißner, Klaus; Richter, Robert; Michler, Oliver; Bausinger, Markus; Mehlich, Heiko; Hahmann, Martin; Möller, Henning; Wiemer, Maik; Holland, Hans-Jürgen; Gärtner, Roberto; Schubert, Stefan; Richter, Alexander; Strobel, Axel; Fehske, Albrecht; Cech, Sebastian; Aßmann, Uwe; Pawlak, Andreas; Schröter, Michael; Finger, Wolfgang; Schumann, Stefan; Höppner, Sebastian; Walter, Dennis; Eisenreich, Holger; Schüffny, René

    2013-07-01

    An overview about the German cluster project Cool Silicon aiming at increasing the energy efficiency for semiconductors, communications, sensors and software is presented. Examples for achievements are: 1000 times reduced gate leakage in transistors using high-fc (HKMG) materials compared to conventional poly-gate (SiON) devices at the same technology node; 700 V transistors integrated in standard 0.35 μm CMOS; solar cell efficiencies above 19% at cars Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  15. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  16. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  17. Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

    International Nuclear Information System (INIS)

    Mazzillo, M.; Renna, L.; Costa, N.; Badalà, P.; Sciuto, A.; Mannino, G.

    2016-01-01

    Exposure to ultraviolet (UV) radiation is a major risk factor for most skin cancers. The sun is our primary natural source of UV radiation. The strength of the sun's ultraviolet radiation is expressed as Solar UV Index (UVI). UV-A (320–400 nm) and UV-B (290–320 nm) rays mostly contribute to UVI. UV-B is typically the most destructive form of UV radiation because it has enough energy to cause photochemical damage to cellular DNA. Also overexposure to UV-A rays, although these are less energetic than UV-B photons, has been associated with toughening of the skin, suppression of the immune system, and cataract formation. The use of preventive measures to decrease sunlight UV radiation absorption is fundamental to reduce acute and irreversible health diseases to skin, eyes and immune system. In this perspective UV sensors able to monitor in a monolithic and compact chip the UV Index and relative UV-A and UV-B components of solar spectrum can play a relevant role for prevention, especially in view of the integration of these detectors in close at hand portable devices. Here we present the preliminary results obtained on our UV-A sensor technology based on the use of hydrogenated Silicon Nitride (SiN:H) thin passivating layers deposited on the surface of thin continuous metal film Ni 2 Si/4H-SiC Schottky detectors, already used for UV-Index monitoring. The first UV-A detector prototypes exhibit a very low leakage current density of about 0.2 pA/mm 2 and a peak responsivity value of 0.027 A/W at 330 nm, both measured at 0V bias.

  18. Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

    Science.gov (United States)

    Hunter, Gary W.

    2005-01-01

    Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, and fire detection. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors; 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity; 3) The development of high temperature semiconductors, especially silicon carbide. This presentation discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

  19. A radiographic imaging system based upon a 2-D silicon microstrip sensor

    CERN Document Server

    Papanestis, A; Corrin, E; Raymond, M; Hall, G; Triantis, F A; Manthos, N; Evagelou, I; Van den Stelt, P; Tarrant, T; Speller, R D; Royle, G F

    2000-01-01

    A high resolution, direct-digital detector system based upon a 2-D silicon microstrip sensor has been designed, built and is undergoing evaluation for applications in dentistry and mammography. The sensor parameters and image requirements were selected using Monte Carlo simulations. Sensors selected for evaluation have a strip pitch of 50mum on the p-side and 80mum on the n-side. Front-end electronics and data acquisition are based on the APV6 chip and were adapted from systems used at CERN for high-energy physics experiments. The APV6 chip is not self-triggering so data acquisition is done at a fixed trigger rate. This paper describes the mammographic evaluation of the double sided microstrip sensor. Raw data correction procedures were implemented to remove the effects of dead strips and non-uniform response. Standard test objects (TORMAX) were used to determine limiting spatial resolution and detectability. MTFs were determined using the edge response. The results indicate that the spatial resolution of the...

  20. Silicon sensor prototypes for the Phase II upgrade of the CMS tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, Thomas, E-mail: thomas.bergauer@oeaw.ac.at

    2016-09-21

    The High-Luminosity LHC (HL-LHC) has been identified as the highest priority program in High Energy Physics in the mid-term future. It will provide the experiments an additional integrated luminosity of about 2500 fb{sup −1} over 10 years of operation, starting in 2025. In order to meet the experimental challenges of unprecedented p–p luminosity, especially in terms of radiation levels and occupancy, the CMS collaboration will need to replace its entire strip tracker by a new one. In this paper the baseline layout option for this new Phase-II tracker is shown, together with two variants using a tilted barrel geometry or larger modules from 8-inch silicon wafers. Moreover, the two module concepts are discussed, which consist either of two strip sensors (2S) or of one strip and one pixel sensor (PS). These two designs allow p{sub T} discrimination at module level enabling the tracker to contribute to the L1 trigger decision. The paper presents testing results of the macro-pixel-light sensor for the PS module and shows the first electrical characterization of unirradiated, full-scale strip sensor prototypes for the 2S module concept, both on 6- and 8-inch wafers.

  1. Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors

    International Nuclear Information System (INIS)

    Bosma, M J; Visser, J; Koffeman, E N; Evrard, O; De Moor, P; De Munck, K; Tezcan, D Sabuncuoglu

    2011-01-01

    Some X-ray imaging applications demand sensitive areas exceeding the active area of a single sensor. This requires a seamless tessellation of multiple detector modules with edgeless sensors. Our research is aimed at minimising the insensitive periphery that isolates the active area from the edge. Reduction of the edge-defect induced charge injection, caused by the deleterious effects of dicing, is an important step. We report on the electrical characterisation of 300 μm thick edgeless silicon p + -ν-n + diodes, diced using deep reactive ion etching. Sensors with both n-type and p-type stop rings were fabricated in various edge topologies. Leakage currents in the active area are compared with those of sensors with a conventional design. As expected, we observe an inverse correlation between leakage-current density and both the edge distance and stop-ring width. From this correlation we determine a minimum acceptable edge distance of 50 μm. We also conclude that structures with a p-type stop ring show lower leakage currents and higher breakdown voltages than the ones with an n-type stop ring.

  2. Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

    CERN Document Server

    Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

    2006-01-01

    The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

  3. Electroless porous silicon formation applied to fabrication of boron–silica–glass cantilevers

    International Nuclear Information System (INIS)

    Teva, J; Davis, Z J; Hansen, O

    2010-01-01

    This work describes the characterization and optimization of anisotropic formation of porous silicon in large volumes (0.5–1 mm 3 ) of silicon by an electroless wet etching technique. The main goal is to use porous silicon as a sacrificial volume for bulk micromachining processes, especially in cases where etching of the full wafer thickness is needed. The porous silicon volume is formed by a metal-assisted etching in a wet chemical solution composed of hydrogen peroxide (30%), hydrofluoric acid (40%) and ethanol. This paper focuses on optimizing the etching conditions in terms of maximizing the etching rate and reproducibility of the etching. In addition to that, a study of the morphology of the pore that is obtained by this technique is presented. The results from the characterization of the process are applied to the fabrication of boron–silica–glass cantilevers that serve as a platform for bio-chemical sensors. The porous silicon volume is formed in an early step of the fabrication process, allowing easy handling of the wafer during all of the micromachining processes in the process flow. In the final process step, the porous silicon is quickly etched by immersing the wafer in a KOH solution

  4. Modification of inkjet printer for polymer sensitive layer preparation on silicon-based gas sensors

    Directory of Open Access Journals (Sweden)

    Tianjian Li

    2015-04-01

    Full Text Available Inkjet printing is a versatile, low cost deposition technology with the capabilities for the localized deposition of high precision, patterned deposition in a programmable way, and the parallel deposition of a variety of materials. This paper demonstrates a new method of modifying the consumer inkjet printer to prepare polymer-sensitive layers on silicon wafer for gas sensor applications. A special printing tray for the modified inkjet printer to support a 4-inch silicon wafer is designed. The positioning accuracy of the deposition system is tested, based on the newly modified printer. The experimental data show that the positioning errors in the horizontal direction are negligibly small, while the positioning errors in the vertical direction rise with the increase of the printing distance of the wafer. The method for making suitable ink to be deposited to form the polymer-sensitive layer is also discussed. In the testing, a solution of 0.1 wt% polyvinyl alcohol (PVA was used as ink to prepare a sensitive layer with certain dimensions at a specific location on the surface of the silicon wafer, and the results prove the feasibility of the methods presented in this article.

  5. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  6. Electron beam micromachining of plastics

    Czech Academy of Sciences Publication Activity Database

    Dupák, Libor

    2014-01-01

    Roč. 49, 5-6 (2014), s. 310-314 ISSN 0861-4717 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA MŠk EE.2.3.20.0103 Institutional support: RVO:68081731 Keywords : micromachining of plastics * Electron beam Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  7. Biasing of Capacitive Micromachined Ultrasonic Transducers.

    Science.gov (United States)

    Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

    2017-02-01

    Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

  8. Micromachined piezoresistive inclinometer with oscillator-based integrated interface circuit and temperature readout

    International Nuclear Information System (INIS)

    Dalola, Simone; Ferrari, Vittorio; Marioli, Daniele

    2012-01-01

    In this paper a dual-chip system for inclination measurement is presented. It consists of a MEMS (microelectromechanical system) piezoresistive accelerometer manufactured in silicon bulk micromachining and a CMOS (complementary metal oxide semiconductor) ASIC (application specific integrated circuit) interface designed for resistive-bridge sensors. The sensor is composed of a seismic mass symmetrically suspended by means of four flexure beams that integrate two piezoresistors each to detect the applied static acceleration, which is related to inclination with respect to the gravity vector. The ASIC interface is based on a relaxation oscillator where the frequency and the duty cycle of a rectangular-wave output signal are related to the fractional bridge imbalance and the overall bridge resistance of the sensor, respectively. The latter is a function of temperature; therefore the sensing element itself can be advantageously used to derive information for its own thermal compensation. DC current excitation of the sensor makes the configuration unaffected by wire resistances and parasitic capacitances. Therefore, a modular system results where the sensor can be placed remotely from the electronics without suffering accuracy degradation. The inclination measurement system has been characterized as a function of the applied inclination angle at different temperatures. At room temperature, the experimental sensitivity of the system results in about 148 Hz/g, which corresponds to an angular sensitivity around zero inclination angle of about 2.58 Hz deg −1 . This is in agreement with finite element method simulations. The measured output fluctuations at constant temperature determine an equivalent resolution of about 0.1° at midrange. In the temperature range of 25–65 °C the system sensitivity decreases by about 10%, which is less than the variation due to the microsensor alone thanks to thermal compensation provided by the current excitation of the bridge and the

  9. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  10. Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

    Science.gov (United States)

    Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

    2018-01-01

    The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

  11. Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Mori, R., E-mail: riccardo.mori@physik.uni-freiburg.de [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Arratia-Munoz, M.I.; Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M.; Fleta, C.; Fernandez-Tejero, J. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Lohwasser, K. [DESY, Notkestrasse 85, 22607 Hambrug (Germany); and others

    2016-09-21

    The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

  12. MIS gas sensors based on porous silicon with Pd and WO{sub 3}/Pd electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Solntsev, V.S. [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine); Gorbanyuk, T.I., E-mail: tatyanagor@mail.r [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine); Litovchenko, V.G.; Evtukh, A.A. [Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028, Kiev (Ukraine)

    2009-09-30

    Pd and WO{sub 3}/Pd gate metal-oxide-semiconductor (MIS) gas sensitive structures based on porous silicon layers are studied by the high frequency C(V) method. The chemical compositions of composite WO{sub 3}/Pd electrodes are characterized by secondary-ion mass spectrometry (SIMS). The atomic force microscopy (AFM) was used for morphologic studies of WO{sub 3}/Pd films. As shown in the experiments, WO{sub 3}/Pd structures are more sensitive and selective to the adsorption of hydrogen sulphide compared to Pd gate. The analyses of kinetic characteristics allow us to determine the response and characteristic times for these structures. The response time of MIS-structures with thin composite WO{sub 3}/Pd electrodes (the thickness of Pd is about 50 nm with WO{sub 3} clusters on its surface) is slower compared to the structures with Pd electrodes. Slower sensor responses of WO{sub 3}-based gas sensors may be associated with different mechanism of gas sensitivity of given structures. The enhanced sensitivity and selectivity to H{sub 2}S action of WO{sub 3}/Pd MIS-structures can also be explained by the chemical reaction that occurs at the catalytic active surface of gate electrodes. The possible mechanisms of enhanced sensitivity and selectivity to H{sub 2}S adsorption of MIS gas sensors with WO{sub 3}/Pd composite gate electrodes compared to pure Pd have been analyzed.

  13. High speed micromachining with high power UV laser

    Science.gov (United States)

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  14. Vascular tissue engineering by computer-aided laser micromachining.

    Science.gov (United States)

    Doraiswamy, Anand; Narayan, Roger J

    2010-04-28

    Many conventional technologies for fabricating tissue engineering scaffolds are not suitable for fabricating scaffolds with patient-specific attributes. For example, many conventional technologies for fabricating tissue engineering scaffolds do not provide control over overall scaffold geometry or over cell position within the scaffold. In this study, the use of computer-aided laser micromachining to create scaffolds for vascular tissue networks was investigated. Computer-aided laser micromachining was used to construct patterned surfaces in agarose or in silicon, which were used for differential adherence and growth of cells into vascular tissue networks. Concentric three-ring structures were fabricated on agarose hydrogel substrates, in which the inner ring contained human aortic endothelial cells, the middle ring contained HA587 human elastin and the outer ring contained human aortic vascular smooth muscle cells. Basement membrane matrix containing vascular endothelial growth factor and heparin was to promote proliferation of human aortic endothelial cells within the vascular tissue networks. Computer-aided laser micromachining provides a unique approach to fabricate small-diameter blood vessels for bypass surgery as well as other artificial tissues with complex geometries.

  15. Micromachined integrated quantum circuit containing a superconducting qubit

    Science.gov (United States)

    Brecht, Teresa; Chu, Yiwen; Axline, Christopher; Pfaff, Wolfgang; Blumoff, Jacob; Chou, Kevin; Krayzman, Lev; Frunzio, Luigi; Schoelkopf, Robert

    We demonstrate a functional multilayer microwave integrated quantum circuit (MMIQC). This novel hardware architecture combines the high coherence and isolation of three-dimensional structures with the advantages of integrated circuits made with lithographic techniques. We present fabrication and measurement of a two-cavity/one-qubit prototype, including a transmon coupled to a three-dimensional microwave cavity micromachined in a silicon wafer. It comprises a simple MMIQC with competitive lifetimes and the ability to perform circuit QED operations in the strong dispersive regime. Furthermore, the design and fabrication techniques that we have developed are extensible to more complex quantum information processing devices.

  16. High-frequency micro-machined power inductors

    International Nuclear Information System (INIS)

    Wang, N.; O'Donnell, T.; Roy, S.; Brunet, M.; McCloskey, P.; O'Mathuna, S.C.

    2005-01-01

    Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 nH. The DC saturation currents of the non-gapped and gapped inductors are ∼500 and 700 mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters

  17. Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

    International Nuclear Information System (INIS)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-01-01

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm 3 . For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  18. Sensitivity encoded silicon photomultiplier—a new sensor for high-resolution PET-MRI

    Science.gov (United States)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-07-01

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm3. For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  19. Sensitivity encoded silicon photomultiplier--a new sensor for high-resolution PET-MRI.

    Science.gov (United States)

    Schulz, Volkmar; Berker, Yannick; Berneking, Arne; Omidvari, Negar; Kiessling, Fabian; Gola, Alberto; Piemonte, Claudio

    2013-07-21

    Detectors for simultaneous positron emission tomography and magnetic resonance imaging in particular with sub-mm spatial resolution are commonly composed of scintillator crystal arrays, readout via arrays of solid state sensors, such as avalanche photo diodes (APDs) or silicon photomultipliers (SiPMs). Usually a light guide between the crystals and the sensor is used to enable the identification of crystals which are smaller than the sensor elements. However, this complicates crystal identification at the gaps and edges of the sensor arrays. A solution is to use as many sensors as crystals with a direct coupling, which unfortunately increases the complexity and power consumption of the readout electronics. Since 1997, position-sensitive APDs have been successfully used to identify sub-mm crystals. Unfortunately, these devices show a limitation in their time resolution and a degradation of spatial resolution when placed in higher magnetic fields. To overcome these limitations, this paper presents a new sensor concept that extends conventional SiPMs by adding position information via the spatial encoding of the channel sensitivity. The concept allows a direct coupling of high-resolution crystal arrays to the sensor with a reduced amount of readout channels. The theory of sensitivity encoding is detailed and linked to compressed sensing to compute unique sparse solutions. Two devices have been designed using one- and two-dimensional linear sensitivity encoding with eight and four readout channels, respectively. Flood histograms of both devices show the capability to precisely identify all 4 × 4 LYSO crystals with dimensions of 0.93 × 0.93 × 10 mm(3). For these crystals, the energy and time resolution (MV ± SD) of the devices with one (two)-dimensional encoding have been measured to be 12.3 · (1 ± 0.047)% (13.7 · (1 ± 0.047)%) around 511 keV with a paired coincidence time resolution (full width at half maximum) of 462 · (1 ± 0.054) ps (452 · (1 ± 0

  20. Redesigned Gas Mass Flow Sensors for Space Shuttle Pressure Control System and Fuel Cell System

    Science.gov (United States)

    1996-01-01

    A program was conducted to determine if a state of the art micro-machined silicon solid state flow sensor could be used to replace the existing space shuttle orbiter flow sensors. The rather aggressive goal was to obtain a new sensor which would also be a multi-gas sensor and operate over a much wider flow range and with a higher degree of accuracy than the existing sensors. Two types of sensors were tested. The first type was a venturi throat design and the second was a bypass design. The accuracy of venturi design was found to be marginally acceptable. The bypass sensor was much better although it still did not fully reach the accuracy goal. Two main problems were identified which would require further work.

  1. Handbook of Modern Sensors Physics, Designs, and Applications

    CERN Document Server

    Fraden, Jacob

    2010-01-01

    This book is about devices commonly called sensors. Digital systems, however complex and intelligent they might be, must receive information from the outside world that is generally analog and not electrical. Sensors are interface devices between various physical values and the electronic circuits who "understand" only a language of moving electrical charges. In other words, sensors are the eyes, ears, and noses of silicon chips. Unlike other books on sensors, this book is organized according to the measured variables (temperature, pressure, position, etc.) that make it much more practical and easier to read. In this new edition recent ideas and developments have been added while less important and non-essential designs were dropped. Sections on practical designs and use of the modern micro-machining technologies have been revised substantially. This book is a reference text that can be used by students, researchers interested in modern instrumentation (applied physicists and engineers), sensor designers, app...

  2. Determination of heavy metals contamination using a silicon sensor with extended responsive to the UV

    International Nuclear Information System (INIS)

    Aceves-Mijares, M; Ramírez, J M; Pedraza, J; Román-López, S; Chávez, C

    2013-01-01

    Due to its potential risk to human health and ecology, the presence of heavy metals in water demands of techniques to determine them in a simple and economical way. Currently, new developments of light emitters and detectors open a window of opportunities to use optical properties to analyze contaminated water. In this paper, a silicon sensor developed to extend its sensitivity up to the UV range is used to determine heavy metals in water. Cadmium, Zinc, Lead, Copper and Manganese mixed in pure water at different concentrations were used as test samples. The photocurrent obtained by the light that passes through the samples was used to determine the optical transmittance of pure and contaminated water. Preliminary results show a good separability between samples, which can be used for qualitative and quantitative detection of such heavy metals in water.

  3. An investigation of excess noise in transition-edge sensors on a solid silicon substrate

    International Nuclear Information System (INIS)

    Crowder, S.G.; Lindeman, M.A.; Anderson, M.B.; Bandler, S.R.; Bilgri, N.; Bruijn, M.P.; Chervenak, J.; Figueroa-Feliciano, E.; Finkbeiner, F.; Germeau, A.; Hoevers, H.F.C.; Iyomoto, N.; Kelly, R.; Kilbourne, C.A.; Lai, T.; Man, J.; McCammon, D.; Nelms, K.L.; Porter, F.S.; Rocks, L.; Saab, T.; Sadleir, J.; Vidugiris, G.

    2006-01-01

    Transition-edge sensors (TESs) exhibit two major types of excess noise above the expected and unavoidable thermodynamic fluctuation noise (TFN) to the heat sink and Johnson noise. High-resistance TESs such as those made by the Netherlands Institute for Space Research (SRON) show excess noise consistent with internal TFN (ITFN) caused by random energy transport within the TES itself while low resistance TESs show an excess voltage noise of unknown origin seemingly unrelated to temperature fluctuations. Running a high-resistance TES on a high thermal conductivity substrate should suppress ITFN and allow detection of any excess voltage noise. We tested two TESs on a solid silicon substrate fabricated by SRON of a relatively high normal state resistance of ∼200 mΩ. After determining a linear model of the TES response to noise for the devices, we found little excess TFN and little excess voltage noise for bias currents of up to ∼20 μA

  4. Micro-discharge noise and radiation damage of silicon microstrip sensors

    International Nuclear Information System (INIS)

    Ohsugi, T.; Iwata, Y.; Ohyama, H.; Ohmoto, T.; Yoshikawa, M.; Handa, T.; Kurino, K.; Fujita, K.; Kitabayashi, H.; Tamura, N.; Hatakenaka, T.; Maeohmichi, M.; Takahata, M.; Nakao, M.; Iwasaki, H.; Kohriki, T.; Terada, S.; Unno, Y.; Takashima, R.; Yamamoto, K.; Yamamura, K.

    1996-01-01

    We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO 2 and Si 3 N 4 provides better radiation hardness than that of single SiO 2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring. (orig.)

  5. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  6. A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

    Directory of Open Access Journals (Sweden)

    Guanwu Zhou

    2014-07-01

    Full Text Available Theoretical analysis in this paper indicates that the accuracy of a silicon piezoresistive pressure sensor is mainly affected by thermal drift, and varies nonlinearly with the temperature. Here, a smart temperature compensation system to reduce its effect on accuracy is proposed. Firstly, an effective conditioning circuit for signal processing and data acquisition is designed. The hardware to implement the system is fabricated. Then, a program is developed on LabVIEW which incorporates an extreme learning machine (ELM as the calibration algorithm for the pressure drift. The implementation of the algorithm was ported to a micro-control unit (MCU after calibration in the computer. Practical pressure measurement experiments are carried out to verify the system’s performance. The temperature compensation is solved in the interval from −40 to 85 °C. The compensated sensor is aimed at providing pressure measurement in oil-gas pipelines. Compared with other algorithms, ELM acquires higher accuracy and is more suitable for batch compensation because of its higher generalization and faster learning speed. The accuracy, linearity, zero temperature coefficient and sensitivity temperature coefficient of the tested sensor are 2.57% FS, 2.49% FS, 8.1 × 10−5/°C and 29.5 × 10−5/°C before compensation, and are improved to 0.13%FS, 0.15%FS, 1.17 × 10−5/°C and 2.1 × 10−5/°C respectively, after compensation. The experimental results demonstrate that the proposed system is valid for the temperature compensation and high accuracy requirement of the sensor.

  7. Omega-X micromachining system

    International Nuclear Information System (INIS)

    Miller, D.M.

    1978-01-01

    A micromachining tool system with X- and omega-axes is used to machine spherical, aspherical, and irregular surfaces with a maximum contour error of 100 nonometers (nm) and surface waviness of no more than 0.8 nm RMS. The omega axis, named for the angular measurement of the rotation of an eccentric mechanism supporting one end of a tool bar, enables the pulse increments of the tool toward the workpiece to be as little as 0 to 4.4 nm. A dedicated computer coordinates motion in the two axes to produce the workpiece contour. Inertia is reduced by reducing the mass pulsed toward the workpiece to about one-fifth of its former value. The tool system includes calibration instruments to calibrate the micromachining tool system. Backlash is reduced and flexing decreased by using a rotary table and servomotor to pulse the tool in the omega-axis instead of a ball screw mechanism. A thermally-stabilized spindle roates the workpiece and is driven by a motor not mounted on the micromachining tool base through a torque-smoothing pulley and vibrationless rotary coupling. Abbe offset errors are almost eliminated by tool setting and calibration at spindle center height. Tool contour and workpiece contour are gaged on the machine; this enables the source of machining errors to be determined more readily, because the workpiece is gaged before its shape can be changed by removal from the machine

  8. Resist materials for proton micromachining

    International Nuclear Information System (INIS)

    Kan, J.A. van; Sanchez, J.L.; Xu, B.; Osipowicz, T.; Watt, F.

    1999-01-01

    The production of high aspect ratio microstructures is a potential growth area. The combination of deep X-ray lithography with electroforming and micromolding (i.e. LIGA) is one of the main techniques used to produce 3D microstructures. The new technique of proton micromachining employs focused MeV protons in a direct write process which is complementary to LIGA, e.g. micromachining with 2 MeV protons results in microstructures with a height of 63 μm and lateral sub-micrometer resolution in PMMA resist. The aim of this paper is to investigate the capabilities of proton micromachining as a lithographic technique. This involves the study of different types of resists. The dose distribution of high molecular weight PMMA is compared with three other types of resist: First the positive photo resist AZ P4620 will be discussed and then PMGI SF 23, which can be used as a deep UV, e-beam or X-ray resist. Finally SU-8, a new deep UV negative type of chemically amplified resist will be discussed. All these polymers are applied using the spin coating technique at thicknesses of between 1 and 36 μm

  9. Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

    International Nuclear Information System (INIS)

    Platkevic, M; Jakubek, J; Jakubek, M; Pospisil, S; Zemlicka, J; Havranek, V; Semian, V

    2013-01-01

    Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10 12 particles/cm 2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

  10. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Beccherle, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Pisa (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste (Italy); INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2016-09-21

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

  11. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    INSPIRE-00052711; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Ducourthial, Audrey; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola

    2016-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

  12. Wafer scale nano-membrane supported on a silicon microsieve using thin-film transfer technology

    NARCIS (Netherlands)

    Unnikrishnan, S.; Jansen, Henricus V.; Berenschot, Johan W.; Elwenspoek, Michael Curt

    A new micromachining method to fabricate wafer scale nano-membranes is described. The delicate thin-film nano-membrane is supported on a robust silicon microsieve fabricated by plasma etching. The silicon sieve is micromachined independently of the thin-film, which is later transferred onto it by

  13. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  14. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  15. Recent progress in sensor- and mechanics-R and D for the Belle II Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Bergauer, T., E-mail: thomas.bergauer@oeaw.ac.at [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Doljeschi, P.; Frankenberger, A.; Friedl, M.; Gfall, I.; Irmler, C. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Onuki, Y. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Smiljic, D. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [Institute of High Energy Physics, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2013-08-01

    The Belle experiment at the KEKB electron/positron collider in Tsukuba (Japan) was successfully running for more than ten years. A major update of the machine to SuperKEKB is now foreseen until 2015, aiming a peak luminosity which is 40 times the peak value of the previous system. This also requires a redesign of the Belle detector (leading to Belle II) and especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. The future Belle II SVD will consist of four layers of double-sided silicon strip sensors based on 6 in. silicon wafers. Three of the four layers will be equipped with trapezoidal sensors in the slanted forward region. Moreover, two inner layers with pixel detectors based on DEPFET technology will complement the SVD as innermost detector. Since the KEKB-factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by arranging the sensors in the so-called “Origami chip-on-sensor concept”, and a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO{sub 2} cooling for the front-end chips will ensure high efficiency at minimum material budget. In this paper, an overview of the future Belle II SVD design will be given, covering the silicon sensors, the readout electronics and the mechanics. A strong emphasis will be given to our R and D work on double-sided sensors where different p-stop layouts for the n-side of the detectors were compared. Moreover, this paper gives updated numbers for the mechanical dimensions of the ladders and their radii.

  16. Recent progress in sensor- and mechanics-R and D for the Belle II Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Bergauer, T.; Doljeschi, P.; Frankenberger, A.; Friedl, M.; Gfall, I.; Irmler, C.; Onuki, Y.; Smiljic, D.; Tsuboyama, T.; Valentan, M.

    2013-01-01

    The Belle experiment at the KEKB electron/positron collider in Tsukuba (Japan) was successfully running for more than ten years. A major update of the machine to SuperKEKB is now foreseen until 2015, aiming a peak luminosity which is 40 times the peak value of the previous system. This also requires a redesign of the Belle detector (leading to Belle II) and especially its Silicon Vertex Detector (SVD), which surrounds the beam pipe. The future Belle II SVD will consist of four layers of double-sided silicon strip sensors based on 6 in. silicon wafers. Three of the four layers will be equipped with trapezoidal sensors in the slanted forward region. Moreover, two inner layers with pixel detectors based on DEPFET technology will complement the SVD as innermost detector. Since the KEKB-factory operates at relatively low energy, material inside the active volume has to be minimized in order to reduce multiple scattering. This can be achieved by arranging the sensors in the so-called “Origami chip-on-sensor concept”, and a very light-weight mechanical support structure made from carbon fiber reinforced Airex foam. Moreover, CO 2 cooling for the front-end chips will ensure high efficiency at minimum material budget. In this paper, an overview of the future Belle II SVD design will be given, covering the silicon sensors, the readout electronics and the mechanics. A strong emphasis will be given to our R and D work on double-sided sensors where different p-stop layouts for the n-side of the detectors were compared. Moreover, this paper gives updated numbers for the mechanical dimensions of the ladders and their radii

  17. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  18. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  19. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  20. Design and Manufacturing of a Passive Pressure Sensor Based on LC Resonance

    Directory of Open Access Journals (Sweden)

    Cheng Zheng

    2016-05-01

    Full Text Available The LC resonator-based passive pressure sensor attracts much attention because it does not need a power source or lead wires between the sensing element and the readout system. This paper presents the design and manufacturing of a passive pressure sensor that contains a variable capacitor and a copper-electroplated planar inductor. The sensor is fabricated using silicon bulk micro-machining, electroplating, and anodic bonding technology. The finite element method is used to model the deflection of the silicon diaphragm and extract the capacitance change corresponding to the applied pressure. Within the measurement range from 5 to 100 kPa, the sensitivity of the sensor is 0.052 MHz/kPa, the linearity is 2.79%, and the hysteresis error is 0.2%. Compared with the sensitivity at 27 °C, the drop of output performance is 3.53% at 140 °C.

  1. Development of Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

    Science.gov (United States)

    Hunter, G. W.; Neudeck, P. G.; Fralick, G.; Thomas, V.; Liu, C. C.; Wu, W. H.; Ward, B.; Makel, D.

    2002-01-01

    Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, fire detection, and environmental monitoring. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. However, due to issues of selectivity and cross-sensitivity, individual sensors are limited in the amount of information that they can provide in environments that contain multiple chemical species. Thus, sensor arrays are being developed to address detection needs in such multi-species environments. This paper discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, hydrazine, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

  2. Silicon Sensors for High-Luminosity Trackers - RD50 Collaboration Status Report

    CERN Document Server

    Kuehn, Susanne

    2014-01-01

    The revised schedule for the Large Hadron Collider (LHC) upg rade foresees a significant increase of the luminosity of the LHC by upgrading towards the HL-LHC ( High Luminosity-LHC). The final upgrade is planned for around the year 2023, followed by the HL-LHC running. This is motivated by the need to harvest the maximum physics potenti al from the machine. It is clear that the high integrated luminosity of 3000 fb − 1 will result in very high radiation levels, which manifest a serious challenge for the detectors. This is espe cially true for the tracking detectors installed close to the interaction point. For HL-LHC, all-s ilicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silico n sensors to be employed in the innermost layers. Within the RD50 Collaboration, a massive R&D; program is underway, with an open cooperation across experimental boundaries to deve lop silicon sensors with sufficient radiation tolerance. This report presents several researc h topics...

  3. The PASTA chip for the silicon micro strip sensor of the PANDA MVD

    Energy Technology Data Exchange (ETDEWEB)

    Riccardi, Alberto; Brinkmann, Kai-Thomas; Di Pietro, Valentino; Quagli, Tommaso; Schnell, Robert; Zaunick, Hans-Georg [II. Physikalisches Institut, Justus-Liebig-Universitaet, Giessen (Germany); Ritman, James; Stockmanns, Tobias; Zambanini, Andre [Forschungszentrum Juelich (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy); Collaboration: PANDA-Collaboration

    2016-07-01

    In the Micro Vertex Detector, which is the innermost detector of PANDA, there are two different types of sensors: hybrid pixel and double sided micro strips. My work is focused on the development of the ASIC readout for the strips, which in the PANDA experiment must cope with a hit rate up to 50 kHz per channel. The energy loss measurement of the particles crossing the silicon sensor is obtained by implementing the Time over Threshold technique. The first PASTA (PANDA Strip ASIC) prototype is based on a Time to Digital Converter with an analog clock interpolator which combines good time resolution with a low power consumption. A full size chip was developed in a 0.11μ m CMOS technology and delivered in Autumn 2015. It features 64 channels with both analog and digital parts, a digital global controller, LVDS drivers and integrated bias. In the presentation, an overview of PASTA and the results of the first tests is presented.

  4. Investigation of silicon sensors quality as a function of the ohmic side processing technology

    CERN Document Server

    Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

    2002-01-01

    Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

  5. Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors

    CERN Document Server

    Stricker, Miriam

    2015-01-01

    For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples at temperatures up to 180 ◦C. A first annealing study on a proton irradiated silicon pad sensor was performed. This study focuses mainly on the variation of the trap concentration and the results are compared to literature.

  6. A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

    CERN Document Server

    Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

    2003-01-01

    A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

  7. Charge Losses in Silicon Sensors and Electric-Field Studies at the Si-SiO$_2$ Interface

    CERN Document Server

    Poehlsen, Thomas

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs ($eh$ pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate $eh$ pairs along the whole sensor depth, a few $\\mu$m below the surface and very close to the surface, respectively. Segmented p$^+$n silicon strip sensors are used to study the electric field below the SiO$_2$ separating the strip implants. The sensors are investigated before and after irradiation with 12 keV x-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO$_2$ interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the...

  8. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

    Directory of Open Access Journals (Sweden)

    Sofiane Khachroumi

    2010-01-01

    Full Text Available Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon, permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.

  9. Excimer laser micromachining for 3D microstructure

    NARCIS (Netherlands)

    Choi, Kyung Hyun; Meijer, J.; Masuzawa, Takahisa; Kim, Dae-Hyun

    2004-01-01

    A new 3D micromachining method, called Hole Area Modulation (HAM), has been introduced to enhance the current micromachining technology. In this method, information on the machining depth is converted to the sizes of holes on the mask. The machining is carried out with a simple 2D movement of the

  10. Piezoelectric MEMS sensors: state-of-the-art and perspectives

    International Nuclear Information System (INIS)

    Tadigadapa, S; Mateti, K

    2009-01-01

    Over the past two decades, several advances have been made in micromachined sensors and actuators. As the field of microelectromechanical systems (MEMS) has advanced, a clear need for the integration of materials other than silicon and its compounds into micromachined transducers has emerged. Piezoelectric materials are high energy density materials that scale very favorably upon miniaturization and that has led to an ever-growing interest in piezoelectric films for MEMS applications. At this time, piezoelectric aluminum-nitride-based film bulk acoustic resonators (FBAR) have already been successfully commercialized. Future innovations and improvements in inertial sensors for navigation, high-frequency crystal oscillators and filters for wireless applications, microactuators for RF applications, chip-scale chemical analysis systems and countless other applications hinge upon the successful miniaturization of components and integration of piezoelectrics and metals into these systems. In this article, a comprehensive review of micromachined piezoelectric transducer technology will be presented. Piezoelectric materials in bulk and thin film forms will be reviewed and fabrication techniques for the integration of these materials for microsensor applications will be presented. Recent advances in various piezoelectric microsensors will be presented through specific examples. This review will conclude with a critical assessment of the future trends and promise of this technology. (topical review)

  11. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo

    2013-06-15

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO{sub 2} interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO{sub 2} to the Si-SiO{sub 2} interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An

  12. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    International Nuclear Information System (INIS)

    Zhang, Jiaguo

    2013-06-01

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO 2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO 2 to the Si-SiO 2 interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An electron

  13. Polyimide as a versatile enabling material for microsystems fabrication: surface micromachining and electrodeposited nanowires integration

    Science.gov (United States)

    Walewyns, Thomas; Reckinger, Nicolas; Ryelandt, Sophie; Pardoen, Thomas; Raskin, Jean-Pierre; Francis, Laurent A.

    2013-09-01

    The interest of using polyimide as a sacrificial and anchoring layer is demonstrated for post-processing surface micromachining and for the incorporation of metallic nanowires into microsystems. In addition to properties like a high planarization factor, a good resistance to most non-oxidizing acids and bases, and CMOS compatibility, polyimide can also be used as a mold for nanostructures after ion track-etching. Moreover, specific polyimide grades, such as PI-2611 from HD Microsystems™, involve a thermal expansion coefficient similar to silicon and low internal stress. The process developed in this study permits higher gaps compared to the state-of-the-art, limits stiction problems with the substrate and is adapted to various top-layer materials. Most metals, semiconductors or ceramics will not be affected by the oxygen plasma required for polyimide etching. Released structures with vertical gaps from one to several tens of μm have been obtained, possibly using multiple layers of polyimide. Furthermore, patterned freestanding nanowires have been synthesized with diameters from 20 to 60 nm and up to 3 μm in length. These results have been applied to the fabrication of two specific devices: a generic nanomechanical testing lab-on-chip platform and a miniaturized ionization sensor.

  14. Laser Micromachining and Information Discovery Using a Dual Beam Interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Theppakuttaikomaraswamy, Senthil P. [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    Lasers have proven to be among the most promising tools for micromachining because they can process features down to the size of the laser wavelength (smaller than 1 micrometer) and they provide a non-contact technology for machining. The demand for incorporating in-situ diagnostics technology into the micromachining environment is driven by the increasing need for producing micro-parts of high quality and accuracy. Laser interferometry can be used as an on-line monitoring tool and it is the aim of this work to enhance the understanding and application of Michelson interferometry principle for the in-situ diagnostics of the machining depth on the sub-micron and micron scales. micromachining is done on two different materials and a comprehensive investigation is done to control the width and depth of the machined feature. To control the width of the feature, laser micromachining is done on copper and a detailed analysis is performed. The objective of this experiment is to make a precision mask for sputtering with an array of holes on it using an Nd:YAG laser of 532 nm wavelength. The diameter of the hole is 50 μm and the spacing between holes (the distance between the centers) is 100 μm. Michelson interferometer is integrated with a laser machining system to control the depth of machining. An excimer laser of 308 nm wavelength is used for micromachining. A He-Ne laser of 632.8 nm wavelength is used as the light source for the interferometer. Interference patterns are created due to the change in the path length between the two interferometer arms. The machined depth information is obtained from the interference patterns on an oscilloscope detected by a photodiode. To compare the predicted depth by the interferometer with the true machining depth, a surface profilometer is used to measure the actual machining depth on the silicon. It is observed that the depths of machining obtained by the surface profile measurement are in accordance with the interferometer

  15. Micro-machined calorimetric biosensors

    Science.gov (United States)

    Doktycz, Mitchel J.; Britton, Jr., Charles L.; Smith, Stephen F.; Oden, Patrick I.; Bryan, William L.; Moore, James A.; Thundat, Thomas G.; Warmack, Robert J.

    2002-01-01

    A method and apparatus are provided for detecting and monitoring micro-volumetric enthalpic changes caused by molecular reactions. Micro-machining techniques are used to create very small thermally isolated masses incorporating temperature-sensitive circuitry. The thermally isolated masses are provided with a molecular layer or coating, and the temperature-sensitive circuitry provides an indication when the molecules of the coating are involved in an enthalpic reaction. The thermally isolated masses may be provided singly or in arrays and, in the latter case, the molecular coatings may differ to provide qualitative and/or quantitative assays of a substance.

  16. Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

    CERN Document Server

    Giacomini, Gabriele

    Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

  17. Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

    CERN Document Server

    Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

    2014-01-01

    Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

  18. A novel integrated multifunction micro-sensor for three-dimensional micro-force measurements.

    Science.gov (United States)

    Wang, Weizhong; Zhao, Yulong; Qin, Yafei

    2012-01-01

    An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10(-3) KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

  19. A Novel Integrated Multifunction Micro-Sensor for Three-Dimensional Micro-Force Measurements

    Directory of Open Access Journals (Sweden)

    Yafei Qin

    2012-03-01

    Full Text Available An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10−3 KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

  20. Damping control of micromachined lowpass mechanical vibration isolation filters using electrostatic actuation with electronic signal processing

    Science.gov (United States)

    Dean, Robert; Flowers, George; Sanders, Nicole; MacAllister, Ken; Horvath, Roland; Hodel, A. S.; Johnson, Wayne; Kranz, Michael; Whitley, Michael

    2005-05-01

    Some harsh environments, such as those encountered by aerospace vehicles and various types of industrial machinery, contain high frequency/amplitude mechanical vibrations. Unfortunately, some very useful components are sensitive to these high frequency mechanical vibrations. Examples include MEMS gyroscopes and resonators, oscillators and some micro optics. Exposure of these components to high frequency mechanical vibrations present in the operating environment can result in problems ranging from an increased noise floor to component failure. Passive micromachined silicon lowpass filter structures (spring-mass-damper) have been demonstrated in recent years. However, the performance of these filter structures is typically limited by low damping (especially if operated in near-vacuum environments) and a lack of tunability after fabrication. Active filter topologies, such as piezoelectric, electrostrictive-polymer-film and SMA have also been investigated in recent years. Electrostatic actuators, however, are utilized in many micromachined silicon devices to generate mechanical motion. They offer a number of advantages, including low power, fast response time, compatibility with silicon micromachining, capacitive position measurement and relative simplicity of fabrication. This paper presents an approach for realizing active micromachined mechanical lowpass vibration isolation filters by integrating an electrostatic actuator with the micromachined passive filter structure to realize an active mechanical lowpass filter. Although the electrostatic actuator can be used to adjust the filter resonant frequency, the primary application is for increasing the damping to an acceptable level. The physical size of these active filters is suitable for use in or as packaging for sensitive electronic and MEMS devices, such as MEMS vibratory gyroscope chips.

  1. Efficient Flame Detection and Early Warning Sensors on Combustible Materials Using Hierarchical Graphene Oxide/Silicone Coatings.

    Science.gov (United States)

    Wu, Qian; Gong, Li-Xiu; Li, Yang; Cao, Cheng-Fei; Tang, Long-Cheng; Wu, Lianbin; Zhao, Li; Zhang, Guo-Dong; Li, Shi-Neng; Gao, Jiefeng; Li, Yongjin; Mai, Yiu-Wing

    2018-01-23

    Design and development of smart sensors for rapid flame detection in postcombustion and early fire warning in precombustion situations are critically needed to improve the fire safety of combustible materials in many applications. Herein, we describe the fabrication of hierarchical coatings created by assembling a multilayered graphene oxide (GO)/silicone structure onto different combustible substrate materials. The resulting coatings exhibit distinct temperature-responsive electrical resistance change as efficient early warning sensors for detecting abnormal high environmental temperature, thus enabling fire prevention below the ignition temperature of combustible materials. After encountering a flame attack, we demonstrate extremely rapid flame detection response in 2-3 s and excellent flame self-extinguishing retardancy for the multilayered GO/silicone structure that can be synergistically transformed to a multiscale graphene/nanosilica protection layer. The hierarchical coatings developed are promising for fire prevention and protection applications in various critical fire risk and related perilous circumstances.

  2. Fast-timing Capabilities of Silicon Sensors for the CMS High-Granularity Calorimeter at the High-Luminosity LHC

    Science.gov (United States)

    Akchurin, Nural; CMS Collaboration

    2017-11-01

    We report on the signal timing capabilities of thin silicon sensors when traversed by multiple simultaneous minimum ionizing particles (MIP). Three different planar sensors, 133, 211, and 285 μm thick in depletion thickness, have been exposed to high energy muons and electrons at CERN. We describe signal shape and timing resolution measurements as well as the response of these devices as a function of the multiplicity of MIPs. We compare these measurements to simulations where possible. We achieve better than 20 ps timing resolution for signals larger than a few tens of MIPs.

  3. Impact of irradiations by protons with different energies on silicon sensors

    International Nuclear Information System (INIS)

    Neubueser, Coralie

    2013-06-01

    In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10 11 cm -2 and 1.5 x 10 15 cm -2 , the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of Φ eq ∼3 x 10 14 cm -2 oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

  4. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons

    Science.gov (United States)

    Radu, R.; Pintilie, I.; Makarenko, L. F.; Fretwurst, E.; Lindstroem, G.

    2018-04-01

    This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm-2 and 6 × 1014 cm-2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s-1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect.

  5. Impact of irradiations by protons with different energies on silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Neubueser, Coralie

    2013-06-15

    In the frame of the CMS tracker upgrade campaign the radiation damage of oxygenrich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated. The diodes were manufactured by Hamamatsu Photonics. After irradiation with 1 MeV neutron equivalent fluences between 1 x 10{sup 11} cm{sup -2} and 1.5 x 10{sup 15} cm{sup -2}, the sensors were electrically characterized by means of capacitance-voltage (CV) and current-voltage (IV) measurements. Current pulses recorded by the Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements show a dependence of the bulk damage on the proton energy. At a fluence of {Phi}{sub eq}{approx}3 x 10{sup 14} cm{sup -2} oxygen-rich n-type diodes demonstrate clear Space Charge Sign Inversion (SCSI) after 23 MeV proton irradiation. This effect does not appear after the irradiation with 23 GeV protons. Moreover, RD50 pad diodes were irradiated with 23 MeV protons, electrically characterized and compared to results obtained after 23 GeV irradiations. Our previous observation on the energy dependence of the radiation damage could be confirmed. In order to get a deeper understanding of the differences of the radiation induced defects, the Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current Technique (TSC) were utilized. Defects with impact on the space charge could be identified and characterized and it was possible to find some hints for the reason of the SCSI after 23 MeV proton irradiation. Moreover, a dependence on the oxygen concentration of the sensors could be observed.

  6. Sub-aquatic response of a scintillator, fibre optic and silicon photomultiplier based radiation sensor

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Sarah F., E-mail: s.f.jackson@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster (United Kingdom); Monk, Stephen D., E-mail: s.monk@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster (United Kingdom); Stanley, Steven J., E-mail: steven.j.stanley@nnl.co.uk [National Nuclear Laboratory, A709 Springfields, Preston (United Kingdom); Lennox, Kathryn, E-mail: kathryn.lennox@nnl.co.uk [National Nuclear Laboratory, A709 Springfields, Preston (United Kingdom)

    2014-07-01

    We describe an attempt at the utilisation of two low level light sensors to improve on the design of a dose monitoring system, specifically for underwater applications with consideration for the effects of water attenuation. The gamma radiation ‘RadLine{sup ®}’ detector consists of an inorganic scintillating crystal coupled to a fibre optic cable which transports scintillation photons, up to hundreds of metres, to an optical sensor. Analysed here are two contemporary technologies; SensL's MiniSL a silicon photomultiplier (SiPM) and a Sens-Tech photon counting photomultiplier tube (PMT). A clinical radiotherapy linear accelerator (linac) is implemented as test beam, subjecting the RadLine{sup ®} to a highly controlled dose rate (ranging from 0 Sv h{sup −1} to 320 Sv h{sup −1}), averaging at 2 MeV in energy. The RadLine's underwater dose monitoring capabilities are tested with the aid of epoxy resin ‘solid water’ phantom blocks, used as a substitute for water. Our results show that the MiniSL SiPM is unsuitable for this application due to extremely high background noise levels, however the Sens-Tech PMT performs satisfactorily and the detected dose rate due to the effects of water attenuation compares strongly with MCNP simulation data and NIST database values. We conclude that the PMT shows promise for its ultimate use in the First Generation Magnox Storage Pond (FGMSP) on the Sellafield site. - Highlights: • RadLine{sup ®} consists of a scintillating crystal coupled to a fibre optic cable and photon detector. • Here the dose monitoring system is trialled with SiPM and PMT type photon detectors. • A clinical linear accelerator (linac) is used as a test beam. • Sub-aquatic response is compared to Monte Carlo simulations and the NIST database.

  7. A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

    International Nuclear Information System (INIS)

    Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

    2012-01-01

    This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

  8. The silicon tracking system of the CBM experiment at FAIR. Development of microstrip sensors and signal transmission lines for a low-mass, low-noise system

    International Nuclear Information System (INIS)

    Singla, Minni

    2014-01-01

    In this thesis, different physical and electrical aspects of silicon microstrip sensors and low-mass multi-line readout cables have been investigated. These silicon microstrip sensors and readout cables will be used in the Silicon Tracking System (STS) of the fixed-target heavy-ion Compressed Baryonic Matter (CBM) experiment which is under development at the upcoming Facility for Antiproton and ion Research (FAIR) in Darmstadt, Germany. The highly segmented low-mass tracking system is a central CBM detector system to resolve the high tracking densities of charged particles originating from beam-target interactions. Considering the low material budget requirement the double-sided silicon microstrip detectors have been used in several planar tracking stations. The readout electronics is planned to be installed at the periphery of the tracking stations along with the cooling system. Low-mass multi-line readout cables shall bridge the distance between the microstrip sensors and the readout electronics. The CBM running operational scenario suggests that some parts of the tracking stations are expected to be exposed to a total integrated particle fluence of the order of 1 x 10 14 n eq /cm 2 . After 1 x 10 14 n eq /cm 2 the damaged modules in the tracking stations will be replaced. Thus radiation hard sensor is an important requirement for the sensors. Moreover, to cope with the high reaction rates, free-streaming (triggerless) readout electronics with online event reconstruction must be used which require high signal-to-noise (SNR) ratio (i.e., high signal efficiency, low noise contributions). Therefore, reduction in noise is a major goal of the sensor and cable development. For better insight into the different aspects of the silicon microstrip sensors and multi-line readout cables, the simulation study has been performed using SYNOPSYS TCAD tools. 3D models of the silicon microstrip sensors and the readout cables were implemented which is motivated by the stereoscopic

  9. DOUBLE BOSS SCULPTURED DIAPHRAGM EMPLOYED PIEZORESISTIVE MEMS PRESSURE SENSOR WITH SILICON-ON-INSULATOR (SOI

    Directory of Open Access Journals (Sweden)

    D. SINDHANAISELVI

    2017-07-01

    Full Text Available This paper presents the detailed study on the measurement of low pressure sensor using double boss sculptured diaphragm of piezoresistive type with MEMS technology in flash flood level measurement. The MEMS based very thin diaphragms to sense the low pressure is analyzed by introducing supports to achieve linearity. The simulation results obtained from Intellisuite MEMS CAD design tool show that very thin diaphragms with rigid centre or boss give acceptable linearity. Further investigations on very thin diaphragms embedded with piezoresistor for low pressure measurement show that it is essential to analyse the piezoresistor placement and size of piezoresistor to achieve good sensitivity. A modified analytical modelling developed in this study for double boss sculptured diaphragm results were compared with simulated results. Further the enhancement of sensitivity is analyzed using non uniform thickness diaphragm and Silicon-On-Insulator (SOI technique. The simulation results indicate that the double boss square sculptured diaphragm with SOI layer using 0.85μm thickness yields the higher voltage sensitivity, acceptable linearity with Small Scale Deflection.

  10. The PASTA chip - A free-running readout ASIC for silicon strip sensors in PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Goerres, Andre; Stockmanns, Tobias; Ritman, James [Institut fuer Kernphysik, Forschungszentrum Juelich, Juelich (Germany); Rivetti, Angelo [INFN Sezione di Torino, Torino (Italy); Collaboration: PANDA-Collaboration

    2014-07-01

    The PANDA experiment is a multi purpose detector, investigating hadron physics in the charm quark mass regime. It is one of the main experiments at the future FAIR accelerator facility, using pp annihilations from a 1.5-15 GeV/c anti-proton beam. Because of the broad physics spectrum and the similarity of event and background signals, PANDA does not rely on a hardware-level trigger decision. The innermost of PANDA's sub-systems is the Micro Vertex Detector (MVD), consisting of silicon pixel and strip sensors. The latter will be read out by a specialized, free-running readout front-end called PANDA Strip ASIC (PASTA). It has to face a high event rate of up to 40 kHz/ch in an radiation-intense environment. To fulfill the MVD's requirements, it has to give accurate timing information to incoming events (<10 ns) and determine the collected charge with an 8-bit precision. The design has to meet cooling and placing restrictions, leading to a very low power consumption (<4 mW/ch) and limited dimensions. Therefore, a simple, time-based readout approach is chosen. In this talk, the conceptual design of the front-end is presented.

  11. The PASTA chip. A free-running readout ASIC for silicon strip sensors in PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Goerres, Andre; Stockmanns, Tobias; Ritman, James [Forschungszentrum Juelich GmbH, Juelich (Germany); Rivetti, Angelo [INFN Sezione di Torino, Torino (Italy); Collaboration: PANDA-Collaboration

    2015-07-01

    The PANDA experiment is a multi purpose detector, investigating hadron physics in the charm quark mass regime. It is one of the main experiments at the future FAIR accelerator facility, using anti pp annihilations from a 1.5-15 GeV/c anti-proton beam. Because of the broad physics spectrum and the similarity of event and background signals, PANDA does an event selection based on the complete raw data of the detector. The innermost of PANDA's sub-systems is the Micro Vertex Detector (MVD), consisting of silicon pixel and strip sensors. The latter will be read out by a specialized, free-running readout front-end called PANDA Strip ASIC (PASTA). It has to face a high event rate of up to 40 kHz/ch in an radiation-intense environment. To fulfill the MVD's requirements, it has to give accurate timing information to incoming events (<10 ns) and determine the collected charge with an 8-bit precision. All this has to be done with a very low power design (<4 mW/ch) on a small footprint with less than 21 mm{sup 2} and 60 μm input pitch for 64 channels per chip. Therefore, a simple, time-based readout approach with two independent thresholds is chosen. In this talk, the conceptual design of the full front-end and some aspects of the digital part are presented.

  12. Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor

    International Nuclear Information System (INIS)

    Birner, S; Uhl, C; Bayer, M; Vogl, P

    2008-01-01

    For a bio-sensor device based on a silicon-on-insulator structure, we calculate the sensitivity to specific charge distributions in the electrolyte solution that arise from protein binding to the semiconductor surface. This surface is bio-functionalized with a lipid layer so that proteins can specifically bind to the headgroups of the lipids on the surface. We consider charged proteins such as the green fluorescent protein (GFP) and artificial proteins that consist of a variable number of aspartic acids. Specifically, we calculate self-consistently the spatial charge and electrostatic potential distributions for different ion concentrations in the electrolyte. We fully take into account the quantum mechanical charge density in the semiconductor. We determine the potential change at the binding sites as a function of protein charge and ionic strength. Comparison with experiment is generally very good. Furthermore, we demonstrate the superiority of the full Poisson-Boltzmann equation by comparing its results to the simplified Debye-Hueckel approximation

  13. Solution-based analysis of multiple analytes by a sensor array: toward the development of an electronic tongue

    Science.gov (United States)

    Savoy, Steven M.; Lavigne, John J.; Yoo, J. S.; Wright, John; Rodriguez, Marc; Goodey, Adrian; McDoniel, Bridget; McDevitt, John T.; Anslyn, Eric V.; Shear, Jason B.; Ellington, Andrew D.; Neikirk, Dean P.

    1998-12-01

    A micromachined sensor array has been developed for the rapid characterization of multi-component mixtures in aqueous media. The sensor functions in a manner analogous to that of the mammalian tongue, using an array composed of individually immobilized polystyrene-polyethylene glycol composite microspheres selectively arranged in micromachined etch cavities localized o n silicon wafers. Sensing occurs via colorimetric or fluorometric changes to indicator molecules that are covalently bound to amine termination sites on the polymeric microspheres. The hybrid micromachined structure has been interfaced directly to a charged-coupled-device that is used for the simultaneous acquisition of the optical data from the individually addressable `taste bud' elements. With the miniature sensor array, acquisition of data streams composed of red, green, and blue color patterns distinctive for the analytes in the solution are rapidly acquired. The unique combination of carefully chosen reporter molecules with water permeable microspheres allows for the simultaneous detection and quantification of a variety of analytes. The fabrication of the sensor structures and the initial colorimetric and fluorescent responses for pH, Ca+2, Ce+3, and sugar are reported. Interface to microfluidic components should also be possible, producing a complete sampling/sensing system.

  14. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Pradeep [Goethe University, Frankfurt am Main (Germany); GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Eschke, Juergen [GSI Helmholtz Center for Heavy Ion Research GmbH, Darmstadt (Germany); Facility for Anti-proton and Ion Research, GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The Silicon Tracking System (STS) of the CBM experiment at FAIR is composed of 8 tracking stations comprising of 1292 double-sided silicon micro-strip sensors. A Laser Test System (LTS) has been developed for the quality assurance of prototype sensors. The aim is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. Several prototype sensors with strip pitch of 50 and 58 μm have been tested, as well as a prototype module with realistic mechanical arrangement of sensor and read-out cables. The LTS is designed to measure sensor response in an automatized procedure across the sensor with focused laser beam (spot-size ∼ 12 μm, wavelength = 1060 nm). The pulse with duration (∼ 10 ns) and power (∼ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Results from laser scans of prototype sensors and detector module are reported.

  15. Determination of young's modulus of PZT and CO80Ni20 thin films by means of micromachined cantilevers

    NARCIS (Netherlands)

    Nazeer, H.; Abelmann, Leon; Tas, Niels Roelof; van Honschoten, J.W.; Siekman, Martin Herman; Elwenspoek, Michael Curt

    2009-01-01

    This paper presents a technique to determine the Young’s modulus and residual stress of thin films using a simple micromachined silicon cantilever as the test structure. An analytical relation was developed based on the shift in resonance frequency caused by the addition of a thin film on the

  16. Micromachining process – current situation and challenges

    Directory of Open Access Journals (Sweden)

    Lalakiya Meet Rajeshkumar

    2015-01-01

    Full Text Available The rapid progress in the scientific innovations and the hunt for the renewable energy increases the urge for producing the bio electronic products, solar cells, bio batteries, nano robots, MEMS, blood less surgical tools which can be possible with the aid of the micromachining. This article helps us to understand the evolution and the challenges faced by the micromachining process. Micro machining is an enabling technology that facilitates component miniaturization and improved performance characteristics. Growing demand for less weight, high accuracy, high precision, meagre lead time, reduced batch size, less human interference are the key drivers for the micromachining than the conventional machining process.

  17. A novel micromachined shadow mask system with self-alignment and gap control capability

    International Nuclear Information System (INIS)

    Hong, Jung Moo; Zou Jun

    2008-01-01

    We present a novel micromachined shadow mask system, which is capable of accurate self-alignment and mask-substrate gap control. The shadow mask system consists of a silicon shadow mask and a silicon carrier wafer with pyramidal cavities fabricated with bulk micromachining. Self-alignment and gap control of the shadow mask and the fabrication substrate can readily be achieved by using matching pairs of pyramidal cavities and steel spheres placed between. The layer-to-layer alignment accuracy of the new shadow mask system has been experimentally characterized and verified using both optical and atomic force microscopic measurements. As an application of this new shadow mask system, an organic thin-film transistor (OTFT) using pentacene as the semiconductor layer has been successfully fabricated and tested

  18. Design Parameter Optimization of a Silicon-Based Grating Waveguide for Performance Improvement in Biochemical Sensor Application.

    Science.gov (United States)

    Hong, Yoo-Seung; Cho, Chun-Hyung; Sung, Hyuk-Kee

    2018-03-05

    We performed numerical analysis and design parameter optimization of a silicon-based grating waveguide refractive index (RI) sensor. The performance of the grating waveguide RI sensor was determined by the full-width at half-maximum (FWHM) and the shift in the resonance wavelength in the transmission spectrum. The transmission extinction, a major figure-of-merit of an RI sensor that reflects both FWHM and resonance shift performance, could be significantly improved by the proper determination of three major grating waveguide parameters: duty ratio, grating period, and etching depth. We analyzed the transmission characteristics of the grating waveguide under various design parameter conditions using a finite-difference time domain method. We achieved a transmission extinction improvement of >26 dB under a given bioenvironmental target change by the proper choice of the design procedure and parameters. This design procedure and choice of appropriate parameters would enable the widespread application of silicon-based grating waveguide in high-performance RI biochemical sensor.

  19. P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

    CERN Document Server

    AUTHOR|(CDS)2084505

    2015-01-01

    In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

  20. Insertable B-Layer integration in the ATLAS experiment and development of future 3D silicon pixel sensors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00371528; Røhne, Ole

    This work has two distinct objectives: the development of software for the integration of the Insertable B-Layer (IBL) in the ATLAS offline software framework and the study of the performance of 3D silicon sensors produced by SINTEF for future silicon pixel detectors. The former task consists in the implementation of the IBL byte stream converter. This offline tool performs the decoding of the binary-formatted data coming from the detector into information (e.g. hit position and Time over Threshold) that is stored in a format used in the reconstruction data flow. It also encodes the information extracted from simulations into a simulated IBL byte stream. The tool has been successfully used since the beginning of the LHC Run II data taking. The experimental work on SINTEF 3D sensors was performed in the framework of the development of pixel sensors for the next generation of tracking detectors. Preliminary tests on SINTEF 3D sensors showed that the majority of these devices suffers from high leakage currents, ...

  1. Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Zeid, S.Abu; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Hoffmann, M.; Junkes, A.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Sola, V.; Steinbruck, G.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M.A.; Dell'Orso, R.; Fedi, G.; Giassi, A.; Grippo, M.T.; Lomtadze, T.; Magazzu, G.; Mazzoni, E.; Minuti, M.; Moggi, A.; Moon, C.S.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Savoy-Navarro, A.; Serban, A.T.; Spagnolo, P.; Tenchini, R.; Venturi, A.; Verdini, P.G.; Martini, L.; Messineo, A.; Rizzi, A.; Tonelli, G.; Calzolari, F.; Donato, S.; Fiori, F.; Ligabue, F.; Vernieri, C.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J.; I.I.I.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2016-04-22

    The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \\cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes...

  2. Design and Analysis of a New Tuning Fork Structure for Resonant Pressure Sensor

    Directory of Open Access Journals (Sweden)

    Xiaodong Sun

    2016-08-01

    Full Text Available This paper presents a micromachined resonant pressure sensor. The sensor is designed to optimize the sensitivity and reduce the cross-talk between the driving electrodes and sensing electrodes. The relationship between the sensitivity of the sensor and the main design parameters is analyzed both theoretically and numerically. The sensing and driving electrodes are optimized to get both high sensing capacitance and low cross-talk. This sensor is fabricated using a micromachining process based on a silicon-on-insulator (SOI wafer. An open-loop measurement system and a closed-loop self-oscillation system is employed to measure the characteristics of the sensor. The experiment result shows that the sensor has a pressure sensitivity of about 29 Hz/kPa, a nonlinearity of 0.02%FS, a hysteresis error of 0.05%FS, and a repeatability error of 0.01%FS. The temperature coefficient is less than 2 Hz/°C in the range of −40 to 80 °C and the short-term stability of the sensor is better than 0.005%FS.

  3. Production and characterization of SLID interconnected n-in-p pixel modules with 75 micron thin silicon sensors

    CERN Document Server

    Andricek, L; Macchiolo, A; Moser, H.G; Nisius, R; Richter, R.H; Terzo, S; Weigell, P

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. T...

  4. Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

    CERN Document Server

    Andricek, L; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tunability, charge collection, cluster sizes and hit efficiencies. Targeting at ...

  5. FISH & CHIPS: Four Electrode Conductivity / Salinity Sensor on a Silicon Multi-sensor chip for Fisheries Research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Olafsdottir, Iris; Olesen, M.

    2005-01-01

    The design and fabrication of a single chip silicon salinity, temperature, pressure and light multisensor is presented. The behavior 2- and 4-electrode conductivity microsensors are described and methods for precise determination of water conductivity are given......The design and fabrication of a single chip silicon salinity, temperature, pressure and light multisensor is presented. The behavior 2- and 4-electrode conductivity microsensors are described and methods for precise determination of water conductivity are given...

  6. A sub-cm micromachined electron microscope

    Science.gov (United States)

    Feinerman, A. D.; Crewe, D. A.; Perng, D. C.; Shoaf, S. E.; Crewe, A. V.

    1993-01-01

    A new approach for fabricating macroscopic (approximately 10x10x10 mm(exp 3)) structures with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create four orthogonal v-grooves and an aperture on each 10x12 mm die. Precision 308 micron optical fibers are sandwiched between the die to align the v-grooves. The fiber is then anodically bonded to the die above and below it. This procedure is repeated to create thick structures and a stack of 5 or 6 die will be used to create a miniature scanning electron microscope (MSEM). Two die in the structure will have a segmented electrode to deflect the beam and correct for astigmatism. The entire structure is UHV compatible. The performance of an SEM improves as its length is reduced and a sub-cm 2 keV MSEM with a field emission source should have approximately 1 nm resolution. A low voltage high resolution MSEM would be useful for the examination of biological specimens and semiconductors with a minimum of damage. The first MSEM will be tested with existing 6 micron thermionic sources. In the future a micromachined field emission source will be used. The stacking technology presented in this paper can produce an array of MSEMs 1 to 30 mm in length with a 1 mm or larger period. A key question being addressed by this research is the optimum size for a low voltage MSEM which will be determined by the required spatial resolution, field of view, and working distance.

  7. Micromachined Integrated Transducers for Ultrasound Imaging

    DEFF Research Database (Denmark)

    la Cour, Mette Funding

    The purpose of this project is to develop capacitive micromachined ultrasonic transducers (CMUTs) for medical imaging. Medical ultrasound transducers used today are fabricated using piezoelectric materials and bulk processing. To fabricate transducers capable of delivering a higher imaging...

  8. Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon. Towards sensor applications

    International Nuclear Information System (INIS)

    Green, S.

    2000-02-01

    The effect of adsorbed oxygen and hydrogen gas on porous silicon has been investigated using two different techniques, viz. optical and electrical. The photoluminescence quenching by oxygen and hydrogen was found to be reversible with a response time of the order of 3000 s. Unlike any reported porous silicon gas quenching systems, both the extent and rate of quenching were found to be a function of photoluminescence wavelength. The quenching is attributed to charge transfer from the conduction band of porous silicon to the lowest unoccupied molecular orbital of oxygen and hydrogen, respectively. Surface conductance measurements (aluminium contacts) show that the principal charge transfer process is via tunnelling, with some conduction through the underlying bulk p-type silicon layer. Symmetrical current-voltage plots were obtained for this system which were attributed to pinning of the aluminium-porous silicon Fermi level at mid-gap by the high surface trap density. An approximate doubling of the aluminium electrode separation was found to reduce approximately fourfold the initial rate of increase in surface conductance on adsorption of oxygen at a pressure of 10 torr. To the best of the author's knowledge this is the first time that such an effect has been reported in a room temperature solid state gas sensor. Gas sensitivity measurements using surface contacts show a logarithmic response to the concentration of oxygen up to a pressure of 100 torr with a rapid response, of 300 s. A 39% increase in surface conductance occurs on exposure of the device to 100 torr of oxygen. The surface conductance of the device decreases by 34% on exposure to one atmosphere of hydrogen with a response time of the order 2000 s. Transverse conductance (DC) measurements show that Au/PS/p-Si/Al..Ag devices behave like a field-dependent diode. An admittance spectroscopy technique has been applied to porous silicon for the first time to calculate g 0 , the trap density at the Fermi level

  9. Fiscal 1996 report on technological results. R and D on micromachine technology; 1996 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches on basic element technology of micromachines are conducted that operate autonomously in a narrow small part in a complicated apparatus or in vivo. The areas of activity are (1) research on micromachine systems, (2) a subminiature liquid synthesizing system, and (3) comprehensive investigation and research. In (1), the researches were carried out on the miniaturization and functional combination of a micro laser catheter and a micro tactile sensor catheter, which are the primary components of a coeliac diagnostic and therapeutic system, a 'micro catheter for cerebral blood vessel/treatment', as a micromachine system in the medical field. In (2), R and D was conducted on a system element technology assuming it contributed to a subminiature liquid synthesizing system capable of preparing various liquids including pharmaceuticals accurately with a trace amount. In (3), examination was made on the application area of a micromachine system with priority given to a medical field and also on technological subjects to be tapped, as well as on the contents of (2), with a device installed for evaluating the operating characteristic of a distribution type fluid actuator as needed for the development. (NEDO)

  10. A label-free silicon quantum dots-based photoluminescence sensor for ultrasensitive detection of pesticides.

    Science.gov (United States)

    Yi, Yinhui; Zhu, Gangbing; Liu, Chang; Huang, Yan; Zhang, Youyu; Li, Haitao; Zhao, Jiangna; Yao, Shouzhuo

    2013-12-03

    Sensitive, rapid, and simple detection methods for the screening of extensively used organophosphorus pesticides and highly toxic nerve agents are in urgent demand. A novel label-free silicon quantum dots (SiQDs)-based sensor was designed for ultrasensitive detection of pesticides. This sensing strategy involves the reaction of acetylcholine chloride (ACh) with acetylcholinesterase (AChE) to form choline that is in turn catalytically oxidized by choline oxidase (ChOx) to produce betaine and H2O2 which can quench the photoluminescence (PL) of SiQDs. Upon the addition of pesticides, the activity of AChE is inhibited, leading to the decrease of the generated H2O2, and hence the PL of SiQDs increases. By measuring the increase in SiQDs PL, the inhibition efficiency of pesticide to AChE activity was evaluated. It was found that the inhibition efficiency was linearly dependent on the logarithm of the pesticides concentration. Consequently, pesticides, such as carbaryl, parathion, diazinon, and phorate, were determined with the SiQDs PL sensing method. The lowest detectable concentrations for carbaryl, parathion, diazinon, and phorate reached 7.25 × 10(-9), 3.25 × 10(-8), 6.76 × 10(-8), and 1.9 × 10(-7) g/L, respectively, which were much lower than those previously reported. The detecting results of pesticide residues in food samples via this method agree well with those from high-performance liquid chromatography. The simple strategy reported here should be suitable for on-site pesticides detection, especially in combination with other portable platforms.

  11. Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2018-01-01

    For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

  12. Fabrication of Microhotplates Based on Laser Micromachining of Zirconium Oxide

    Science.gov (United States)

    Oblov, Konstantin; Ivanova, Anastasia; Soloviev, Sergey; Samotaev, Nikolay; Lipilin, Alexandr; Vasiliev, Alexey; Sokolov, Andrey

    We present a novel approach to the fabrication of MEMS devices, which can be used for gas sensors operating in harsh environment in wireless and autonomous information systems. MEMS platforms based on ZrO2/Y2O3 (YSZ) are applied in these devices. The methods of ceramic MEMS devices fabrication with laser micromachining are considered. It is shown that the application of YSZ membranes permits a decrease in MEMS power consumption at 4500C down to ∼75 mW at continuous heating and down to ∼ 1 mW at pulse heating mode. The application of the platforms is not restricted by gas sensors: they can be used for fast thermometers, bolometric matrices, flowmeteres and other MEMS devices working under harsh environmental conditions.

  13. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

    Science.gov (United States)

    Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

    2017-12-01

    This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

  14. Process Simulation and Characterization of Substrate Engineered Silicon Thin Film Transistor for Display Sensors and Large Area Electronics

    International Nuclear Information System (INIS)

    Hashmi, S M; Ahmed, S

    2013-01-01

    Design, simulation, fabrication and post-process qualification of substrate-engineered Thin Film Transistors (TFTs) are carried out to suggest an alternate manufacturing process step focused on display sensors and large area electronics applications. Damage created by ion implantation of Helium and Silicon ions into single-crystalline n-type silicon substrate provides an alternate route to create an amorphized region responsible for the fabrication of TFT structures with controllable and application-specific output parameters. The post-process qualification of starting material and full-cycle devices using Rutherford Backscattering Spectrometry (RBS) and Proton or Particle induced X-ray Emission (PIXE) techniques also provide an insight to optimize the process protocols as well as their applicability in the manufacturing cycle

  15. Development and Application of Microfabricated Chemical Gas Sensors For Aerospace Applications

    Science.gov (United States)

    Hunter, G. W.; Neudeck, P. G.; Fralick, G.; Thomas, V.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, A.; Hammond, J.; Makel, D.; hide

    1990-01-01

    Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring and control, and fire detection. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. This paper discusses the needs of space applications and the point-contact sensor technology being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, nitrogen oxides (Nox, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. Demonstration and application these sensor technologies will be described. The demonstrations range from use of a microsystem based hydrogen sensor on the Shuttle to engine demonstration of a nanocrystalline based sensor for NO, detection. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

  16. Micromachined high-performance RF passives in CMOS substrate

    International Nuclear Information System (INIS)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-01-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications. (topical review)

  17. The upgrade of the ALICE Inner Tracking System - Status of the R&D; on monolithic silicon pixel sensors

    OpenAIRE

    Van Hoorne, Jacobus Willem

    2014-01-01

    s a major part of its upgrade plans, the ALICE experiment schedules the installation of a novel Inner Tracking System (ITS) during the Long Shutdown 2 (LS2) of the LHC in 2018/19. It will replace the present silicon tracker with seven layers of Monolithic Active Pixel Sensors (MAPS) and significantly improve the detector performance in terms of tracking and rate capabilities. The choice of technology has been guided by the tight requirements on the material budget of 0 : 3 % X = X 0 /layer fo...

  18. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    International Nuclear Information System (INIS)

    Poley, Luise; Lohwasser, Kristin; Blue, Andrew

    2016-11-01

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  19. Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    Poley, Luise; Lohwasser, Kristin [DESY, Hamburg (Germany); Blue, Andrew [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

    2016-11-15

    The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

  20. The Laser MicroJet (LMJ): a multi-solution technology for high quality micro-machining

    Science.gov (United States)

    Mai, Tuan Anh; Richerzhagen, Bernold; Snowdon, Paul C.; Wood, David; Maropoulos, Paul G.

    2007-02-01

    The field of laser micromachining is highly diverse. There are many different types of lasers available in the market. Due to their differences in irradiating wavelength, output power and pulse characteristic they can be selected for different applications depending on material and feature size [1]. The main issues by using these lasers are heat damages, contamination and low ablation rates. This report examines on the application of the Laser MicroJet(R) (LMJ), a unique combination of a laser beam with a hair-thin water jet as a universal tool for micro-machining of MEMS substrates, as well as ferrous and non-ferrous materials. The materials include gallium arsenide (GaAs) & silicon wafers, steel, tantalum and alumina ceramic. A Nd:YAG laser operating at 1064 nm (infra red) and frequency doubled 532 nm (green) were employed for the micro-machining of these materials.

  1. Miniature silicon electronic biological assay chip and applications for rapid battlefield diagnostics

    Science.gov (United States)

    Cunningham, Brian T.; Regan, Robert A.; Clapp, Christopher; Hildebrant, Eric; Weinberg, Marc S.; Williams, John

    1999-07-01

    Assessing the medical condition of battlefield personnel requires the development of rapid, portable biological diagnostic assays for a wide variety of antigens and enzymes. Ideally, such an assay would be inexpensive, small, and require no added reagents while maintaining the sensitivity and accuracy of laboratory-based assays. In this work, a microelectromechanical (MEMS) based biological assay sensor is presented which is expected to meet the above requirements. The sensor is a thin silicon membrane resonator (SMR) which registers a decrease in resonant frequency when mass is adsorbed onto its surface. By coating the sensor surface with a monolayer of antibody, for example, we have detected the corresponding antigen with a detection resolution of 0.25 ng/ml in phosphate buffer solution. Micromachining techniques are being used to integrate many (64 elements on the first test chip) identical SMR sensors into a single silicon chip which would be capable of simultaneously performing a wide variety of biomedical assays. The sensors require only a small printed circuit board and 8V power supply to operate and provide a readout. The presentation will describe the operation of the SMR sensor, the fabrication of the sensor array, and initial test results using commercially available animal immunoglobulins in laboratory-prepared test solutions.

  2. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste and INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2014-11-21

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R and D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  3. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor.

    Science.gov (United States)

    Al-Hardan, Naif H; Abdul Hamid, Muhammad Azmi; Ahmed, Naser M; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan Kamil; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N

    2016-06-07

    In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  4. Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

    Science.gov (United States)

    Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

    2018-04-01

    In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

  5. High Sensitivity pH Sensor Based on Porous Silicon (PSi Extended Gate Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Naif H. Al-Hardan

    2016-06-01

    Full Text Available In this study, porous silicon (PSi was prepared and tested as an extended gate field-effect transistor (EGFET for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions.

  6. Demonstration of superconducting micromachined cavities

    Energy Technology Data Exchange (ETDEWEB)

    Brecht, T., E-mail: teresa.brecht@yale.edu; Reagor, M.; Chu, Y.; Pfaff, W.; Wang, C.; Frunzio, L.; Devoret, M. H.; Schoelkopf, R. J. [Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)

    2015-11-09

    Superconducting enclosures will be key components of scalable quantum computing devices based on circuit quantum electrodynamics. Within a densely integrated device, they can protect qubits from noise and serve as quantum memory units. Whether constructed by machining bulk pieces of metal or microfabricating wafers, 3D enclosures are typically assembled from two or more parts. The resulting seams potentially dissipate crossing currents and limit performance. In this letter, we present measured quality factors of superconducting cavity resonators of several materials, dimensions, and seam locations. We observe that superconducting indium can be a low-loss RF conductor and form low-loss seams. Leveraging this, we create a superconducting micromachined resonator with indium that has a quality factor of two million, despite a greatly reduced mode volume. Inter-layer coupling to this type of resonator is achieved by an aperture located under a planar transmission line. The described techniques demonstrate a proof-of-principle for multilayer microwave integrated quantum circuits for scalable quantum computing.

  7. Physics-based signal processing algorithms for micromachined cantilever arrays

    Science.gov (United States)

    Candy, James V; Clague, David S; Lee, Christopher L; Rudd, Robert E; Burnham, Alan K; Tringe, Joseph W

    2013-11-19

    A method of using physics-based signal processing algorithms for micromachined cantilever arrays. The methods utilize deflection of a micromachined cantilever that represents the chemical, biological, or physical element being detected. One embodiment of the method comprises the steps of modeling the deflection of the micromachined cantilever producing a deflection model, sensing the deflection of the micromachined cantilever and producing a signal representing the deflection, and comparing the signal representing the deflection with the deflection model.

  8. Combined Differential and Static Pressure Sensor based on a Double-Bridged Structure

    DEFF Research Database (Denmark)

    Pedersen, Casper; Jespersen, S.T.; Krog, J.P.

    2005-01-01

    A combined differential and static silicon microelectromechanical system pressure sensor based on a double piezoresistive Wheatstone bridge structure is presented. The developed sensor has a conventional (inner) bridge on a micromachined diaphragm and a secondary (outer) bridge on the chip...... substrate. A novel approach is demonstrated with a combined measurement of outputs from the two bridges, which results in a combined deduction of both differential and static media pressure. Also following this new approach, a significant improvement in differential pressure sensor accuracy is achieved....... Output from the two bridges depends linearly on both differential and absolute (relative to atmospheric pressure) media pressure. Furthermore, the sensor stress distributions involved are studied by three-dimensional finite-element (FE) stress analysis. Furthermore, the FE analysis evaluates current...

  9. Charge losses in silicon sensors and electric-field studies at the Si-SiO2 interface

    International Nuclear Information System (INIS)

    Poehlsen, Thomas

    2013-07-01

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs (eh pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate eh pairs along the whole sensor depth, a few μm below the surface and very close to the surface, respectively. Segmented p + n silicon strip sensors are used to study the electric field below the SiO 2 separating the strip implants. The sensors are investigated before and after irradiation with 12 keV X-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO 2 interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the electrostatic potential for different boundary conditions at the surface. Depending on the biasing history incomplete collection of electrons, full charge collection or incomplete collection of holes is observed. After the bias voltage is changed, the amount of observed charge losses is time dependent with time constants being a function of humidity. For the irradiated sensors an increased effective oxide charge density and more electron losses are observed compared to the non-irradiated sensors. Due to positive oxide charges which are always present at the Si-SiO 2 interface an electronaccumulation layer forms, if the oxide charge is not compensated by charges on top of the passivation. If negative charges overcompensate the oxide charge, a hole-accumulation layer forms. In both cases the number of accumulated charges can be temporarily increased by incomplete charge collection of either electrons or holes. How many additional charge carriers can be added to the

  10. Charge losses in silicon sensors and electric-field studies at the Si-SiO{sub 2} interface

    Energy Technology Data Exchange (ETDEWEB)

    Poehlsen, Thomas

    2013-07-15

    Electric fields and charge losses in silicon sensors before and after irradiation with x-rays, protons, neutrons or mixed irradiation are studied in charge-collection measurements. Electron-hole pairs (eh pairs) are generated at different positions in the sensor using sub-ns pulsed laser light of different wavelengths. Light of 1063 nm, 830 nm and 660 nm wavelength is used to generate eh pairs along the whole sensor depth, a few {mu}m below the surface and very close to the surface, respectively. Segmented p{sup +}n silicon strip sensors are used to study the electric field below the SiO{sub 2} separating the strip implants. The sensors are investigated before and after irradiation with 12 keV X-rays to a dose of 1 MGy. It is found that the electric field close to the Si-SiO{sub 2} interface depends on both the irradiation dose and the biasing history. For the non-irradiated sensors the observed dependence of the electric field on biasing history and humidity is qualitatively as expected from simulations of the electrostatic potential for different boundary conditions at the surface. Depending on the biasing history incomplete collection of electrons, full charge collection or incomplete collection of holes is observed. After the bias voltage is changed, the amount of observed charge losses is time dependent with time constants being a function of humidity. For the irradiated sensors an increased effective oxide charge density and more electron losses are observed compared to the non-irradiated sensors. Due to positive oxide charges which are always present at the Si-SiO{sub 2} interface an electronaccumulation layer forms, if the oxide charge is not compensated by charges on top of the passivation. If negative charges overcompensate the oxide charge, a hole-accumulation layer forms. In both cases the number of accumulated charges can be temporarily increased by incomplete charge collection of either electrons or holes. How many additional charge carriers can be

  11. Characterization of silicon micro-strip sensors with a pulsed infra-red laser system for the CBM experiment at FAIR

    International Nuclear Information System (INIS)

    Ghosh, P.

    2015-01-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of 1292 double sided silicon micro-strip sensors. For the quality assurance of produced prototype sensors a laser test system (LTS) has been developed. The aim of the LTS is to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype sensors which are tested with the LTS so far have 256 strips with a pitch of 50 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm , wavelength = 1060 nm). The pulse with duration (≈ 10 ns) and power (≈ 5 mW) of the laser pulses is selected such, that the absorption of the laser light in the 300 μm thick silicon sensors produces a number of about 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. Laser scans different prototype sensors is reported

  12. New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

    Science.gov (United States)

    Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

    1998-07-01

    This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance

  13. The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

  14. The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

  15. Study of New Silicon Sensors for Experiments at Future Particle Colliders

    CERN Document Server

    Muñoz Sánchez, Francisca Javiela

    In this work, two new technologies for future tracker detectors at future colliders are studied. In addition, the characterization techniques are described and the obtained results are presented. On one side, we studied two-dimensional position-sensitive microstrip sensors. This sensors use a resistive material as electrode instead of the standard metallic one. In this way, using a single sensor we can get information about two coordinates of a particle hit. On the other side, we studied double-sided double-type 3D pixel sensors. This sensors are manufactured in 3D technology instead of in the planar technology. They show more radiation hardness and require less energy to be efficiently operated than sensors manufactured in planar technology. With this work, we demonstrate the resistive microstrip sensors functionality as particle detector and the radiation hardness of 3D pixel detectors has been evaluated.

  16. Cryogenically assisted abrasive jet micromachining of polymers

    International Nuclear Information System (INIS)

    Getu, H; Papini, M; Spelt, J K

    2008-01-01

    The abrasive jet micromachining (AJM) of elastomers and polymers such as polydimethylsiloxane (PDMS), acrylonitrile butadiene styrene (ABS) and polytetrafluoroethylene (PTFE) for use in micro-fluidic devices was found to be very slow or impossible at room temperature. To enhance the material removal rate in such materials, a stream of liquid nitrogen (LN 2 ) was injected into the abrasive jet, cooling the target to cryogenic temperatures. Erosion rate measurements on the three polymeric materials (PDMS, ABS and PTFE) with and without the use of LN 2 were compared along with the profiles of micromachined channels and holes. It was found that the use of LN 2 cooling caused brittle erosion in PDMS, allowing it to be micromachined successfully. An erosion rate increase was also observed in PTFE and ABS at high and intermediate impact angles. The use of LN 2 also was found to reduce particle embedding

  17. Optimized design of micromachined electric field mills to maximize electrostatic field sensitivity

    OpenAIRE

    Zhou, Yu; Shafai, Cyrus

    2016-01-01

    This paper describes the design optimization of a micromachined electric field mill, in relation to maximizing its output signal. The cases studied are for a perforated electrically grounded shutter vibrating laterally over sensing electrodes. It is shown that when modeling the output signal of the sensor, the differential charge on the sense electrodes when exposed to vs. visibly shielded from the incident electric field must be considered. Parametric studies of device dimensions show that t...

  18. Surface-micromachined rotatable member having a low-contact-area hub

    Science.gov (United States)

    Rodgers, M. Steven; Sniegowski, Jeffry J.; Krygowski, Thomas W.

    2003-11-18

    A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 .mu.m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

  19. Surface--micromachined rotatable member having a low-contact-area hub

    Science.gov (United States)

    Rodgers, M. Steven; Sniegowski, Jeffry J.

    2002-01-01

    A surface-micromachined rotatable member formed on a substrate and a method for manufacturing thereof are disclosed. The surface-micromachined rotatable member, which can be a gear or a rotary stage, has a central hub, and an annulus connected to the central hub by an overarching bridge. The hub includes a stationary axle support attached to the substrate and surrounding an axle. The axle is retained within the axle support with an air-gap spacing therebetween of generally 0.3 .mu.m or less. The rotatable member can be formed by alternately depositing and patterning layers of a semiconductor (e.g. polysilicon or a silicon-germanium alloy) and a sacrificial material and then removing the sacrificial material, at least in part. The present invention has applications for forming micromechanical or microelectromechanical devices requiring lower actuation forces, and providing improved reliability.

  20. Simulation and experimental validation of a SU-8 based PCR thermocycler chip with integrated heaters and temperature sensor

    DEFF Research Database (Denmark)

    El-Ali, Jamil; Perch-Nielsen, Ivan R.; Poulsen, Claus Riber

    2004-01-01

    We present a SU-8 based polymerase chain reaction (PCR) chip with integrated platinum thin film heaters and temperature sensor. The device is fabricated in SU-8 on a glass substrate. The use of SU-8 provides a simple microfabrication process for the PCR chamber, controllable surface properties......C/s, respectively, the performance of the chip is comparable with the best silicon micromachined PCR chips presented in the literature. The SU-8 chamber surface was found to be PCR compatible by amplification of yeast gene ribosomal protein S3 and Campylobacter gene cadF. The PCR compatibility of the chamber...

  1. High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane.

    Science.gov (United States)

    Cho, Minkyu; Yun, Jeonghoon; Kwon, Donguk; Kim, Kyuyoung; Park, Inkyu

    2018-04-18

    High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H 2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H 2 sensitivity (Δ I/ I 0 > 700-0.5% H 2 concentrations) and fast response time (τ 10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

  2. The analytical calibration model of temperature effects on a silicon piezoresistive pressure sensor

    Directory of Open Access Journals (Sweden)

    Meng Nie

    2017-03-01

    Full Text Available Presently, piezoresistive pressure sensors are highly demanded for using in various microelectronic devices. The electrical behavior of these pressure sensor is mainly dependent on the temperature gradient. In this paper, various factors,which includes effect of temperature, doping concentration on the pressure sensitive resistance, package stress, and temperature on the Young’s modulus etc., are responsible for the temperature drift of the pressure sensor are analyzed. Based on the above analysis, an analytical calibration model of the output voltage of the sensor is proposed and the experimental data is validated through a suitable model.

  3. The use of large area silicon sensors for thermal neutron detection

    International Nuclear Information System (INIS)

    Schulte, R.L.; Swanson, F.; Kesselman, M.

    1994-01-01

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (Aε) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 Ω cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm 2 and 10.5 cm 2 is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  4. The use of large area silicon sensors for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, R.L. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Swanson, F. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Kesselman, M. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States))

    1994-12-30

    The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (A[epsilon]) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 [Omega] cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm[sup 2] and 10.5 cm[sup 2] is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

  5. The Development of Micromachined Gyroscope Structure and Circuitry Technology

    Directory of Open Access Journals (Sweden)

    Dunzhu Xia

    2014-01-01

    Full Text Available This review surveys micromachined gyroscope structure and circuitry technology. The principle of micromachined gyroscopes is first introduced. Then, different kinds of MEMS gyroscope structures, materials and fabrication technologies are illustrated. Micromachined gyroscopes are mainly categorized into micromachined vibrating gyroscopes (MVGs, piezoelectric vibrating gyroscopes (PVGs, surface acoustic wave (SAW gyroscopes, bulk acoustic wave (BAW gyroscopes, micromachined electrostatically suspended gyroscopes (MESGs, magnetically suspended gyroscopes (MSGs, micro fiber optic gyroscopes (MFOGs, micro fluid gyroscopes (MFGs, micro atom gyroscopes (MAGs, and special micromachined gyroscopes. Next, the control electronics of micromachined gyroscopes are analyzed. The control circuits are categorized into typical circuitry and special circuitry technologies. The typical circuitry technologies include typical analog circuitry and digital circuitry, while the special circuitry consists of sigma delta, mode matching, temperature/quadrature compensation and novel special technologies. Finally, the characteristics of various typical gyroscopes and their development tendency are discussed and investigated in detail.

  6. The upgrade of the ALICE Inner Tracking System - Status of the R&D; on monolithic silicon pixel sensors

    CERN Document Server

    Van Hoorne, Jacobus Willem

    2014-01-01

    s a major part of its upgrade plans, the ALICE experiment schedules the installation of a novel Inner Tracking System (ITS) during the Long Shutdown 2 (LS2) of the LHC in 2018/19. It will replace the present silicon tracker with seven layers of Monolithic Active Pixel Sensors (MAPS) and significantly improve the detector performance in terms of tracking and rate capabilities. The choice of technology has been guided by the tight requirements on the material budget of 0 : 3 % X = X 0 /layer for the three innermost layers and backed by the significant progress in the field of MAPS in recent years. The pixel chips are manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Within the ongoing R&D; phase, several sensor chip prototypes have been developed and produced on different epitaxial layer thicknesses and resistivities. These chips are being characterized for their performance before and after irradiation using source tests, test beam and measu...

  7. Fabrication and Optimization of a Nanoporous Platinum Electrode and a Non-enzymatic Glucose Micro-sensor on Silicon

    Directory of Open Access Journals (Sweden)

    Younghun Kim

    2008-10-01

    Full Text Available In this paper, optimal conditions for fabrication of nanoporous platinum (Pt were investigated in order to use it as a sensitive sensing electrode for silicon CMOS integrable non-enzymatic glucose micro-sensor applications. Applied charges, voltages, and temperatures were varied during the electroplating of Pt into the formed nonionic surfactant C16EO8 nano-scaled molds in order to fabricate nanoporous Pt electrodes with large surface roughness factor (RF, uniformity, and reproducibility. The fabricated nanoporous Pt electrodes were characterized using atomic force microscopy (AFM and electrochemical cyclic voltammograms. Optimal electroplating conditions were determined to be an applied charge of 35 mC/mm2, a voltage of -0.12 V, and a temperature of 25 °C, respectively. The optimized nanoporous Pt electrode had an electrochemical RF of 375 and excellent reproducibility. The optimized nanoporous Pt electrode was applied to fabricate non-enzymatic glucose micro-sensor with three electrode systems. The fabricated sensor had a size of 3 mm x 3 mm, air gap of 10 µm, working electrode (WE area of 4.4 mm2, and sensitivity of 37.5 µA•L/mmol•cm2. In addition, it showed large detection range from 0.05 to 30 mmolL-1 and stable recovery responsive to the step changes in glucose concentration.

  8. Production and characterisation of SLID interconnected n-in-p pixel modules with 75 μm thin silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Andricek, L. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Beimforde, M.; Macchiolo, A.; Moser, H.-G. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Nisius, R., E-mail: Richard.Nisius@mpp.mpg.de [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany); Richter, R.H. [Halbleiterlabor der Max-Planck-Gesellschaft, Otto Hahn Ring 6, D-81739 München (Germany); Terzo, S.; Weigell, P. [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut), Föhringer Ring 6, D-80805 München (Germany)

    2014-09-11

    The performance of pixel modules built from 75 μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 10{sup 16}n{sub eq}/cm{sup 2}.

  9. Probing active-edge silicon sensors using a high precision telescope

    NARCIS (Netherlands)

    Akiba, K.; Artuso, M.; van Beveren, V.; van Beuzekom, M.; Boterenbrood, H.; Buytaert, J.; Collins, P.; Dumps, R.; van der Heijden, B.; Hombach, C.; Hynds, D.; Hsu, D.; John, M.; Koffeman, E.; Leflat, A.; Li, Y.; Longstaff, I.; Morton, A.; PérezTrigo, E.; Plackett, R.; Reid, M.M.; Rodríguez Perez, P.; Schindler, H.; Tsopelas, P.; Vázquez Sierra, C.; Wysokiński, M.

    2015-01-01

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100-200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope

  10. Development, fabrication and characterization of a 3D tactile sensor

    International Nuclear Information System (INIS)

    Tibrewala, A; Phataralaoha, A; Büttgenbach, S

    2009-01-01

    In this paper, a touch trigger probe using one- and five-boss cross-shaped membranes is proposed, which can be used in coordinate measuring machines for three-dimensional measurements. Silicon bulk micromachining is utilized to fabricate force sensors. Four different piezoresistor layouts are characterized in this work. A maximum sensitivity of 3.01 mV V −1 mN −1 and 11.29 mV V −1 mN −1 is obtained, respectively, when vertical and lateral loads are applied on one-boss design. The horizontal to vertical stiffness ratio is decreased from 1:37.5 to 1:2.25 when a five-boss design was used compared to a one-boss design. The sensors' ability to measure both normal and shear forces with high linearity is demonstrated by means of tests performed by applying forces between 0 and 25 mN

  11. Probing active-edge silicon sensors using a high precision telescope

    Energy Technology Data Exchange (ETDEWEB)

    Akiba, K. [Federal University of Rio de Janeiro, Rio de Janeiro (Brazil); Artuso, M. [Syracuse University, Syracuse, NY (United States); Beveren, V. van; Beuzekom, M. van; Boterenbrood, H. [Nikhef, Amsterdam (Netherlands); Buytaert, J.; Collins, P.; Dumps, R. [CERN, the European Organisation for Nuclear Research, Geneva (Switzerland); Heijden, B. van der [Nikhef, Amsterdam (Netherlands); Hombach, C. [University of Manchester, Manchester, Lancashire (United Kingdom); Hynds, D. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Hsu, D. [Syracuse University, Syracuse, NY (United States); John, M. [University of Oxford, Oxfordshire (United Kingdom); Koffeman, E. [Nikhef, Amsterdam (Netherlands); Leflat, A. [Lomonosov Moscow State University, Moscow (Russian Federation); Li, Y. [Tsinghua University, Beijing (China); Longstaff, I.; Morton, A. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Pérez Trigo, E. [Universidade de Santiago de Compostela, Santiago de Compostela (Spain); Plackett, R. [Diamond Light Source Ltd., Didcot, Oxfordshire (United Kingdom); and others

    2015-03-21

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge.

  12. High Temperature Characterization of Ceramic Pressure Sensors

    National Research Council Canada - National Science Library

    Fonseca, Michael A; English, Jennifer M; Von Arx, Martin; Allen, Mark G

    2001-01-01

    This work reports functional wireless ceramic micromachined pressure sensors operating at 450 C, with demonstrated materials and readout capability indicating potential extension to temperatures in excess of 600 C...

  13. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  14. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.; Sevilla, Galo T.; Velling, Seneca J.; Cordero, Marlon D.; Hussain, Muhammad Mustafa

    2017-01-01

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  15. Chemical vapor detection using a capacitive micromachined ultrasonic transducer.

    Science.gov (United States)

    Lee, Hyunjoo J; Park, Kwan Kyu; Kupnik, Mario; Oralkan, O; Khuri-Yakub, Butrus T

    2011-12-15

    Distributed sensing of gas-phase chemicals using highly sensitive and inexpensive sensors is of great interest for many defense and consumer applications. In this paper we present ppb-level detection of dimethyl methylphosphonate (DMMP), a common simulant for sarin gas, with a ppt-level resolution using an improved capacitive micromachined ultrasonic transducer (CMUT) as a resonant chemical sensor. The improved CMUT operates at a higher resonant frequency of 47.7 MHz and offers an improved mass sensitivity of 48.8 zg/Hz/μm(2) by a factor of 2.7 compared to the previous CMUT sensors developed. A low-noise oscillator using the CMUT resonant sensor as the frequency-selective device was developed for real-time sensing, which exhibits an Allan deviation of 1.65 Hz (3σ) in the presence of a gas flow; this translates into a mass resolution of 80.5 zg/μm(2). The CMUT resonant sensor is functionalized with a 50-nm thick DKAP polymer developed at Sandia National Laboratory for dimethyl methylphosphonate (DMMP) detection. To demonstrate ppb-level detection of the improved chemical sensor system, the sensor performance was tested at a certified lab (MIT Lincoln Laboratory), which is equipped with an experimental chemical setup that reliably and accurately delivers a wide range of low concentrations down to 10 ppb. We report a high volume sensitivity of 34.5 ± 0.79 pptv/Hz to DMMP and a good selectivity of the polymer to DMMP with respect to dodecane and 1-octanol.

  16. A progress report on the LDRD project entitled {open_quotes}Microelectronic silicon-based chemical sensors: Ultradetection of high value molecules{close_quotes}

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, R.C.

    1996-09-01

    This work addresses a new kind of silicon based chemical sensor that combines the reliability and stability of silicon microelectronic field effect devices with the highly selective and sensitive immunoassay. The sensor works on the principle that thin SiN layers on lightly doped Si can detect pH changes rapidly and reversibly. The pH changes affect the surface potential, and that can be quickly determined by pulsed photovoltage measurements. To detect other species, chemically sensitive films were deposited on the SiN where the presence of the chosen analyte results in pH changes through chemical reactions. A invention of a cell sorting device based on these principles is also described. A new method of immobilizing enzymes using Sandia`s sol-gel glasses is documented and biosensors based on the silicon wafer and an amperometric technique are detailed.

  17. Production and performance of the silicon sensor and custom readout electronics for the PHENIX FVTX tracker

    International Nuclear Information System (INIS)

    Kapustinsky, Jon S.

    2010-01-01

    The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high-density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap comprises four silicon disks covering opening angles from 10 o to 35 o to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 μm radial pitch and projective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low-power design.

  18. Production and performance of the silicon sensor and readout electronics for the PHENIX FVTX tracker

    International Nuclear Information System (INIS)

    Kapustinsky, Jon Steven

    2009-01-01

    The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap is comprised of four silicon disks covering opening angles from 10 to 35 degrees to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 (micro)m radial pitch and proj ective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low power design.

  19. Production and performance of the silicon sensor and custom readout electronics for the PHENIX FVTX tracker

    Energy Technology Data Exchange (ETDEWEB)

    Kapustinsky, Jon S., E-mail: jonk@lanl.go [Los Alamos National Laboratory, Mailstop H846, PO Box 1663, Los Alamos, 87545 New Mexico (United States)

    2010-05-21

    The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high-density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap comprises four silicon disks covering opening angles from 10{sup o} to 35{sup o} to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 {mu}m radial pitch and projective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low-power design.

  20. Radiation hardness properties of full-3D active edge silicon sensors

    Czech Academy of Sciences Publication Activity Database

    Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

    2008-01-01

    Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

  1. Functionalized graphene/silicon chemi-diode H2 sensor with tunable sensitivity

    International Nuclear Information System (INIS)

    Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

    2014-01-01

    A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H 2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene’s Fermi level, leading to tunable sensitivity and detection of H 2 down to the sub-ppm range. (paper)

  2. Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

    Science.gov (United States)

    Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

    2014-03-28

    A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

  3. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    International Nuclear Information System (INIS)

    Weigell, Philipp

    2013-01-01

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb -1 , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10 35 cm -2 s -1 as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10 16 n eq /cm 2 . A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering within the tracking system and leads

  4. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Energy Technology Data Exchange (ETDEWEB)

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  5. Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor.

    Science.gov (United States)

    Gontard, Lionel C; Moldovan, Grigore; Carmona-Galán, Ricardo; Lin, Chao; Kirkland, Angus I

    2014-04-01

    There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM.

  6. Fiscal 1997 report on technological results. R and D on micromachine technology; 1997 nendo micromachine gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches on basic element technology of micromachines are conducted that operate autonomously in a narrow small part in a complicated apparatus or in vivo. The areas of activity are 1. research on micromachine systems and 2. comprehensive investigation and research. In 1, (1) a micro catheter and (2) a micro tactile sensor catheter were studied while, in 2, basic technology and technological problems, particularly those problems concerning sophistication in the medical field were examined and studied. Further, in (1), with the purpose of developing a micro laser catheter for diagnosis/treatment, researches were implemented on the technology of integrating micro laser and an optical fiber which were components of the catheter and on the fabrication of the fine diameter of a micro catheter as well as on the characteristical improvement of the base body on which minute elements were mounted. In (2), characteristical improvement and sophistication were carried out for a high sensitivity contact pressure sensor and a diagnostic tactile sensor, which are mounted on a catheter having a positive bulge control mechanism for insertion into body cavity, with a sensor probe manufactured experimentally. (NEDO)

  7. High-Resolution Silicon-based Particle Sensor with Integrated Amplification, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will deliver a breakthrough in particle-detection sensors, by integrating an amplifying junction as part of the detector topology. Focusing...

  8. Translating silicon nanowire BioFET sensor-technology to embedded point-of-care medical diagnostics

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Zulfiqar, Azeem; Patou, François

    2013-01-01

    Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need to be de......Silicon nanowire and nanoribbon biosensors have shown great promise in the detection of biomarkers at very low concentrations. Their high sensitivity makes them ideal candidates for use in early-stage medical diagnostics and further disease monitoring where low amounts of biomarkers need...... to be detected. However, in order to translate this technology from the bench to the bedside, a number of key issues need to be taken into consideration: Integrating nanobiosensors-based technology requires to overcome the difficult tradeoff between imperatives for high device reproducibilty and associated...... rising fabrication costs. Also the translation of nano-scale sensor technology into daily-use point-of-care devices requires acknowledgement of the end-user requirements, making device portability and human-interfacing a focus point in device development. Sample handling or purification for instance...

  9. A new electrochemical sensor for the simultaneous determination of acetaminophen and codeine based on porous silicon/palladium nanostructure.

    Science.gov (United States)

    Ensafi, Ali A; Ahmadi, Najmeh; Rezaei, Behzad; Abarghoui, Mehdi Mokhtari

    2015-03-01

    A porous silicon/palladium nanostructure was prepared and used as a new electrode material for the simultaneous determination of acetaminophen (ACT) and codeine (COD). Palladium nanoparticles were assembled on porous silicon (PSi) microparticles by a simple redox reaction between the Pd precursor and PSi in an aqueous solution of hydrofluoric acid. This novel nanostructure was characterized by different spectroscopic and electrochemical techniques including scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, fourier transform infrared spectroscopy and cyclic voltammetry. The high electrochemical activity, fast electron transfer rate, high surface area and good antifouling properties of this nanostructure enhanced the oxidation peak currents and reduced the peak potentials of ACT and COD at the surface of the proposed sensor. Simultaneous determination of ACT and COD was explored using differential pulse voltammetry. A linear range of 1.0-700.0 µmol L(-1) was achieved for ACT and COD with detection limits of 0.4 and 0.3 µmol L(-1), respectively. Finally, the proposed method was used for the determination of ACT and COD in blood serum, urine and pharmaceutical compounds. Copyright © 2014 Elsevier B.V. All rights reserved.

  10. Diaphragm metering pumps for cooling silicon sensors at the CERN research center for particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Geiselhart, Marc [LEWA Pumpen AG, Reinach (Switzerland); CERN Press Office, Geneva (Switzerland)

    2016-12-15

    With approximately 9,600 magnets and a circumference of 26.659 km, the Large Hadron Collider (LHC) is the largest and most sophisticated accelerator operated by the CERN research institute. The Large Hadron Collider beauty (LHCb) experiment, the A Toroidal LHC ApparatuS (ATLAS) experiment, and the Compact Muon Solenoid (CMS) experiment are three of the four experiments currently installed at LHC. In order to achieve precise measurements, silicon detectors are built in close vicinity to the interaction point of all experiments. Carbon dioxide cooling plants cool the innermost layers of the silicon detectors down to temperatures as low as -40 C. Two diaphragm metering pumps have been used for the LHCb experiment since 2007. Two similar systems operated in redundancy guarantee from the beginning of 2015 the thermal management of the IBL sub-detector of the TALS experiment.

  11. A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

    CERN Document Server

    INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

    2015-04-23

    During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

  12. A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

    Directory of Open Access Journals (Sweden)

    Shuai Shao

    2017-02-01

    Full Text Available Reliability risks for two different types of through-silicon-vias (TSVs are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si. Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed.

  13. RF characterization and analytical modelling of through silicon vias and coplanar waveguides for 3D integration

    NARCIS (Netherlands)

    Lamy, Y.; Jinesh, K.B.; Roozeboom, F.; Gravesteijn, D.J.; Besling, W.F.A.

    2010-01-01

    High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been electrically characterized in the direct current (dc) and microwave regimes for 3D interconnect applications. The vias were micro-machined in silicon, insulated, and filled with copper employing a bottom-up

  14. Piezoelectric Zinc Oxide Based MEMS Acoustic Sensor

    Directory of Open Access Journals (Sweden)

    Aarti Arora

    2008-04-01

    Full Text Available An acoustic sensors exhibiting good sensitivity was fabricated using MEMS technology having piezoelectric zinc oxide as a dielectric between two plates of capacitor. Thin film zinc oxide has structural, piezoelectric and optical properties for surface acoustic wave (SAW and bulk acoustic wave (BAW devices. Oxygen effficient films are transparent and insulating having wide applications for sensors and transducers. A rf sputtered piezoelectric ZnO layer transforms the mechanical deflection of a thin etched silicon diaphragm into a piezoelectric charge. For 25-micron thin diaphragm Si was etched in tetramethylammonium hydroxide solution using bulk micromachining. This was followed by deposition of sandwiched structure composed of bottom aluminum electrode, sputtered 3 micron ZnO film and top aluminum electrode. A glass having 1 mm diameter hole was bonded on backside of device to compensate sound pressure in side the cavity. The measured value of central capacitance and dissipation factor of the fabricated MEMS acoustic sensor was found to be 82.4pF and 0.115 respectively, where as the value of ~176 pF was obtained for the rim capacitance with a dissipation factor of 0.138. The response of the acoustic sensors was reproducible for the devices prepared under similar processing conditions under different batches. The acoustic sensor was found to be working from 30Hz to 8KHz with a sensitivity of 139µV/Pa under varying acoustic pressure.

  15. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-07-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5{mu}m, an spatial point reconstruction precision better than 10 {mu}m, deflection angles smaller than 10{mu}rad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm''3. (Author) 10 refs.

  16. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    International Nuclear Information System (INIS)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-01-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5μm, an spatial point reconstruction precision better than 10 μm, deflection angles smaller than 10μrad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm 3 . (Author) 10 refs

  17. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  18. Predicting the Deflections of Micromachined Electrostatic Actuators Using Artificial Neural Network (ANN

    Directory of Open Access Journals (Sweden)

    Hing Wah LEE

    2009-03-01

    Full Text Available In this study, a general purpose Artificial Neural Network (ANN model based on the feed-forward back-propagation (FFBP algorithm has been used to predict the deflections of a micromachined structures actuated electrostatically under different loadings and geometrical parameters. A limited range of simulation results obtained via CoventorWare™ numerical software will be used initially to train the neural network via back-propagation algorithm. The micromachined structures considered in the analyses are diaphragm, fixed-fixed beams and cantilevers. ANN simulation results are compared with results obtained via CoventorWare™ simulations and existing analytical work for validation purpose. The proposed ANN model accurately predicts the deflections of the micromachined structures with great reduction of simulation efforts, establishing the method superiority. This method can be extended for applications in other sensors particularly for modeling sensors applying electrostatic actuation which are difficult in nature due to the inherent non-linearity of the electro-mechanical coupling response.

  19. Modeling, design, fabrication and characterization of a micro Coriolis mass flow sensor

    International Nuclear Information System (INIS)

    Haneveld, J; Lammerink, T S J; De Boer, M J; Sanders, R G P; Mehendale, A; Lötters, J C; Dijkstra, M; Wiegerink, R J

    2010-01-01

    This paper discusses the modeling, design and realization of micromachined Coriolis mass flow sensors. A lumped element model is used to analyze and predict the sensor performance. The model is used to design a sensor for a flow range of 0–1.2 g h −1 with a maximum pressure drop of 1 bar. The sensor was realized using semi-circular channels just beneath the surface of a silicon wafer. The channels have thin silicon nitride walls to minimize the channel mass with respect to the mass of the moving fluid. Special comb-shaped electrodes are integrated on the channels for capacitive readout of the extremely small Coriolis displacements. The comb-shaped electrode design eliminates the need for multiple metal layers and sacrificial layer etching methods. Furthermore, it prevents squeezed film damping due to a thin layer of air between the capacitor electrodes. As a result, the sensor operates at atmospheric pressure with a quality factor in the order of 40 and does not require vacuum packaging like other micro Coriolis flow sensors. Measurement results using water, ethanol, white gas and argon are presented, showing that the sensor measures true mass flow. The measurement error is currently in the order of 1% of the full scale of 1.2 g h −1

  20. Optimized design of micromachined electric field mills to maximize electrostatic field sensitivity

    Directory of Open Access Journals (Sweden)

    Yu Zhou

    2016-07-01

    Full Text Available This paper describes the design optimization of a micromachined electric field mill, in relation to maximizing its output signal. The cases studied are for a perforated electrically grounded shutter vibrating laterally over sensing electrodes. It is shown that when modeling the output signal of the sensor, the differential charge on the sense electrodes when exposed to vs. visibly shielded from the incident electric field must be considered. Parametric studies of device dimensions show that the shutter thickness and its spacing from the underlying electrodes should be minimized as these parameters very strongly affect the MEFM signal. Exploration of the shutter perforation size and sense electrode width indicate that the best MEFM design is one where shutter perforation widths are a few times larger than the sense electrode widths. Keywords: MEFM, Finite element method, Electric field measurement, MEMS, Micromachining

  1. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2015-11-01

    Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

  2. Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

    International Nuclear Information System (INIS)

    Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

    2016-01-01

    This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method. (paper)

  3. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    International Nuclear Information System (INIS)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-01-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

  4. A novel laser alignment system for tracking detectors using transparent silicon strip sensors

    International Nuclear Information System (INIS)

    Blum, W.; Kroha, H.; Widmann, P.

    1995-02-01

    Modern large-area precision tracking detectors require increasing accuracy of the geometrical alignment over large distances. A novel optical multi-point alignment system has been developed for the muon spectrometer of the ATLAS detector at the Large Hadron Collider. The system uses collimated laser beams as alignment references which are monitored by semi-transparent optical position sensors. The custom designed sensors provide very precise and uniform position information on the order of 1 μm over a wide measurement range. At suitable laser wavelengths, produced by laser diodes, transmission rates above 90% have been achieved which allow to align more than 30 sensors along one laser beam. With this capability and equipped with integrated readout electronics, the alignment system offers high flexibility for precision applications in a wide range of detector systems. (orig.)

  5. Evaluation of Bulk and Surface Radiation Damage of Silicon Sensors for the ATLAS Upgrade

    CERN Document Server

    Mikeštíková, Marcela; Št'astný, Jan

    2015-01-01

    The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure. It was verified that different geometries of end-cap sensors do not influence their stability; the sensors should provide acceptable strip isolation and n ew gate PTP structure functions well even at the highest tested proton fluence 2× 10 15 n eq / cm 2

  6. Silicon carbide based sensor system for minimized emissions in flue gases; Kiselkarbidbaserat sensorsystem foer minimering av emissioner i roekgaser

    Energy Technology Data Exchange (ETDEWEB)

    Lloyd Spetz, Anita; Bjorklund, Robert

    2012-02-15

    Control of the combustion process is necessary in order to operate boilers in an economic and environmentally acceptable manner. Large power plants can afford expensive measurement instruments to continuously monitor the composition of flue gas. Smaller facilities often lack complete gas analysis systems and it would be to their advantage to have access to inexpensive measurement equipment which could be installed at several points in the flue gas channel. Since oxygen concentration is such an important parameter for describing the combustion process the lambdasond is currently being used as an oxygen sensor in flue gas. It has the advantage of usage for more than 30 years in the automobile industry. Experience from that application has aided its introduction in the power industry. Conditions are not the same in the two branches but the lambdasond is an established technology, produced in large volume, widely available and inexpensive. Vehicle manufacturers continue to develop sensor technology and monitoring capabilities have been extended to CO, NOx and NH3. The latter is the result of SCR (selective catalytic reduction) of NOx by addition of NH3 (from urea), which has been introduced as an exhaust gas aftertreatment technology in diesel powered vehicles. The power industry can be expected to follow this trend by incorporating sensors for monitoring and control of SCR and SNCR (non-catalytic selective reduction) in flue gas applications. This report describes evaluation of silicon carbide based transistors, which have previously been studied in diesel exhaust gas and small boiler flue gas, for applications in larger power plants

  7. Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results

    International Nuclear Information System (INIS)

    Unno, Y.; Edwards, S.O.; Pyatt, S.; Thomas, J.P.; Wilson, J.A.; Kierstead, J.; Lynn, D.; Carter, J.R.; Hommels, L.B.A.; Robinson, D.; Bloch, I.; Gregor, I.M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.

    2014-01-01

    We have been developing a novel radiation-tolerant n + -in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers

  8. Model Design of Piezoelectric Micromachined Modal Gyroscope

    Directory of Open Access Journals (Sweden)

    Xiaojun Hu

    2011-01-01

    Full Text Available This paper reports a novel kind of solid-state microgyroscope, which is called piezoelectric micromachined modal gyroscope (PMMG. PMMG has large stiffness and robust resistance to shake and strike because there is no evident mass-spring component in its structure. This work focused on quantitative optimization of the gyroscope, which is still blank for such gyroscope. The modal analysis by the finite element method (FEM was firstly conducted. A set of quantitative indicators were developed to optimize the operation mode. By FEM, the harmonic analysis was conducted to find the way to efficiently actuate the operational mode needed. The optimal configuration of driving electrodes was obtained. At last, the Coriolis analysis was conducted to show the relation between angular velocity and differential output voltage by the Coriolis force under working condition. The results obtained in this paper provide theoretical basis for realizing this novel kind of micromachined gyroscope.

  9. A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

    CERN Document Server

    Peltola, Timo Hannu Tapani

    2014-01-01

    A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

  10. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  11. Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

    International Nuclear Information System (INIS)

    Sorokin, Iurii

    2013-01-01

    The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10 14 n eq /cm 2 (n eq -neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the amplitude response on

  12. Characterization of silicon microstrip sensors, front-end electronics, and prototype tracking detectors for the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Sorokin, Iurii

    2013-07-01

    The Compressed Baryonic Matter (CBM) experiment will explore the phase diagram of strongly interacting matter in the region of high net baryonic densities. The matter at the extreme conditions will be studied in collisions of a heavy ion beam with a fixed heavy element target. The present work is devoted to the development of the main component of the CBM experiment - the Silicon Tracking System (STS). The STS has to enable reconstruction of up to 1000 charged particle tracks per nucleus-nucleus interaction at the rate of up to 10 MHz, provide a momentum resolution Δp/p of 1 %, and withstand the radiation load of up to 10{sup 14} n{sub eq}/cm{sup 2} (n{sub eq}-neutron equivalent). The STS will be based on double-sided silicon microstrip sensors, that will be arranged in 8 planes in the aperture of the dipole magnet. Selftriggering readout electronics will be located on the periphery of the detecting planes, and connected to the sensors with low mass microcables. In the stage of R and D, as well as in the stages of pre-series and series production, characterization of the sensors, of the front-end electronics, and of the complete detector modules has to be performed. In the present work the required techniques were developed, and the performance of the latest detector prototypes was evaluated. A particular attention is paid to evaluation of the signal amplitude, as it is one of the most important detector characteristics. Techniques for measuring the passive electrical characteristics of the sensors were developed. These include: the coupling and the interstrip capacitances, the interstrip resistance, the bias resistance, the strip leakage current, the bulk capacitance, and the bulk leakage current. The techniques will be applied for the quality assurance of the sensors during the pre-series and the series production. Extensive characterization of the prototype readout chip, n-XYTER, was performed. The register settings were optimized, and the dependence of the

  13. Online analysis of oxygen inside silicon-glass microreactors with integrated optical sensors

    DEFF Research Database (Denmark)

    Ehgartner, Josef; Sulzer, Philipp; Burger, Tobias

    2016-01-01

    A powerful online analysis set-up for oxygen measurements within microfluidic devices is presented. It features integration of optical oxygen sensors into microreactors, which enables contactless, accurate and inexpensive readout using commercially available oxygen meters via luminescent lifetime...... monitoring of enzyme transformations, including d-alanine or d-phenylalanine oxidation by d-amino acid oxidase, and glucose oxidation by glucose oxidase....

  14. Development and characterization of silicone embedded distributed piezoelectric sensors for contact detection

    International Nuclear Information System (INIS)

    Acer, Merve; Salerno, Marco; Paik, Jamie; Agbeviade, Kossi

    2015-01-01

    Tactile sensing transfers complex interactive information in a most intuitive sense. Such a populated set of data from the environment and human interactions necessitates various degrees of information from both modular and distributed areas. A sensor design that could provide such types of feedback becomes challenging when the target component has a nonuniform, agile, high resolution, and soft surface. This paper presents an innovative methodology for the manufacture of novel soft sensors that have a high resolution sensing array due to the sensitivity of ceramic piezoelectric (PZT) elements, while uncommonly matched with the high stretchability of the soft substrate and electrode design. Further, they have a low profile and their transfer function is easy to tune by changing the material and thickness of the soft substrate in which the PZTs are embedded. In this manuscript, we present experimental results of the soft sensor prototypes: PZTs arranged in a four by two array form, measuring 1.5–2.3 mm in thickness, with the sensitivity in the range of 0.07–0.12 of the normalized signal change per unit force. We have conducted extensive tests under dynamic loading conditions that include impact, step and cyclic. The presented prototype's mechanical and functional capacities are promising for applications in biomedical systems where soft, wearable and high precision sensors are needed. (paper)

  15. Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade

    CERN Document Server

    Centis Vignali, Matteo; Eichhorn, Thomas; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg; bigskip; Institut fur Experimentalphysik; Luruper Chaussee; Hamburg; Deutsches Elektronen-Synchrotron Notkestra; e; Hamburg

    2016-01-01

    In this paper, the results obtained from the characterisation of 100 and 200\\,$\\mu$m thick p-bulk pad diodes and strip sensors irradiated up to fluences of $\\Phi_{eq} = 1.3 \\times 10^{16}$ cm$^{-2}$ are shown.

  16. Development and characterization of silicone embedded distributed piezoelectric sensors for contact detection

    Science.gov (United States)

    Acer, Merve; Salerno, Marco; Agbeviade, Kossi; Paik, Jamie

    2015-07-01

    Tactile sensing transfers complex interactive information in a most intuitive sense. Such a populated set of data from the environment and human interactions necessitates various degrees of information from both modular and distributed areas. A sensor design that could provide such types of feedback becomes challenging when the target component has a nonuniform, agile, high resolution, and soft surface. This paper presents an innovative methodology for the manufacture of novel soft sensors that have a high resolution sensing array due to the sensitivity of ceramic piezoelectric (PZT) elements, while uncommonly matched with the high stretchability of the soft substrate and electrode design. Further, they have a low profile and their transfer function is easy to tune by changing the material and thickness of the soft substrate in which the PZTs are embedded. In this manuscript, we present experimental results of the soft sensor prototypes: PZTs arranged in a four by two array form, measuring 1.5-2.3 mm in thickness, with the sensitivity in the range of 0.07-0.12 of the normalized signal change per unit force. We have conducted extensive tests under dynamic loading conditions that include impact, step and cyclic. The presented prototype's mechanical and functional capacities are promising for applications in biomedical systems where soft, wearable and high precision sensors are needed.

  17. Micromachined Parts Advance Medicine, Astrophysics, and More

    Science.gov (United States)

    2015-01-01

    In the mid-1990s, Marshall Space Flight Center awarded two SBIR contracts to Potomac Photonics, now based in Baltimore, for the development of computerized workstations capable of mass-producing tiny, intricate, diffractive optical elements. While the company has since discontinued the workstations, those contracts set the stage for Potomac Photonics to be a leader in the micromachining industry, where NASA remains one of its clients.

  18. Micromachined Piezoelectric Actuators for Cryogenic Adaptive Optics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — TRS Technologies proposes micromachined single crystal piezoelectric actuator arrays to enable ultra-large stroke, high precision shape control for large aperture,...

  19. Demonstration of Robust Micromachined Jet Technology and its Application to Realistic Flow Control Problems

    National Research Council Canada - National Science Library

    Allen, Mark

    2000-01-01

    .... Our approaches include: (1) the development of suitable micromachined synthetic jets (microjets) as actuators, which obviate the need to physically extend micromachined structures into an external flow...

  20. Micromachined capacitive ultrasonic immersion transducer array

    Science.gov (United States)

    Jin, Xuecheng

    Capacitive micromachined ultrasonic transducers (cMUTs) have emerged as an attractive alternative to conventional piezoelectric ultrasonic transducers. They offer performance advantages of wide bandwidth and sensitivity that have heretofore been attainable. In addition, micromachining technology, which has benefited from the fast-growing microelectronics industry, enables cMUT array fabrication and electronics integration. This thesis describes the design and fabrication of micromachined capacitive ultrasonic immersion transducer arrays. The basic transducer electrical equivalent circuit is derived from Mason's theory. The effects of Lamb waves and Stoneley waves on cross coupling and acoustic losses are discussed. Electrical parasitics such as series resistance and shunt capacitance are also included in the model of the transducer. Transducer fabrication technology is systematically studied. Device dimension control in both vertical and horizontal directions, process alternatives and variations in membrane formation, via etch and cavity sealing, and metalization as well as their impact on transducer performance are summarized. Both 64 and 128 element 1-D array transducers are fabricated. Transducers are characterized in terms of electrical input impedance, bandwidth, sensitivity, dynamic range, impulse response and angular response, and their performance is compared with theoretical simulation. Various schemes for cross coupling reduction is analyzed, implemented, and verified with both experiments and theory. Preliminary results of immersion imaging are presented using 64 elements 1-D array transducers for active source imaging.