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Sample records for mg silicon annual

  1. Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

    International Nuclear Information System (INIS)

    Khattack, C. P.; Joyce, D. B.; Schmid, F.

    2001-01-01

    efficiency of 1-cm2 devices made from Cz crystals grown using the new feedstock were 95% as high as those from Cz crystals grown using EG feedstock and were comparable to those we obtained using commercial and lt;111 and gt; Cz wafers. Devices with an efficiency of 7.3% were also made directly on wafers cut from the feedstock that had not gone through a controlled directional solidification. Only a few cells have been processed. Device parameters for this material have not yet been optimized, and additional diagnostic device fabrication, analysis, and verification is under way. The successful B treatment process developed during the program can be used with high-B-doped silicon scrap from the electronics industry thereby making available, for the short term, a new silicon feedstock for an additional 200 MW/year annual production of PV modules. For the future, this approach, when used in an MG silicon production plant, will produce SoG silicon for$7.62/kg, which is less than the goal of$20/kg

  2. Silicon as an attenuator of salt stress in Brachiaria brizantha ‘MG5’

    Directory of Open Access Journals (Sweden)

    Maria Isabel Leite da Silva

    Full Text Available ABSTRACT The aim of this study was to evaluate the effect of salt stress and silicon fertiliser on growth and nutritional value in Brachiaria brizantha ‘MG5’. The experimental design was completely randomised in a 4 x 5 x 3 factorial scheme with four replications; the treatments consisted of four concentrations of sodium chloride (0, 20, 40 and 60 mmol L-1, with five concentrations of silicon (0, 1, 2, 3 and 4 mmol L-1 in the nutrient solution, and three cutting periods (30, 60 and 90 days. The concentration of 4 mmol L-1 silicon minimised the detrimental effects of the sodium chloride on regrowth. However, the levels of silicon application were not sufficient to reduce the harmful effects of the sodium chloride on nutritional value or on dry-matter production in Brachiaria brizantha ‘MG5’.

  3. Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix

    International Nuclear Information System (INIS)

    Baleva, M.; Zlateva, G.; Atanassov, A.; Abrashev, M.; Goranova, E.

    2005-01-01

    Resonant Raman scattering by ion beam synthesized in silicon matrix Mg 2 Si phase is studied. The samples are prepared with the implantation of 24 Mg + ions with dose 4x10 17 cm -2 and with two different energies 40 and 60 keV into (100)Si substrates. The far infrared spectra are used as criteria for the formation of the Mg 2 Si phase. The Raman spectra are excited with different lines of Ar + laser, with energies of the lines lying in the interval from 2.40 to 2.75 eV. The resonant scattering can be investigated using these laser lines, as far as according to the Mg 2 Si band structure, there are direct gaps with energies in the same region. The energy dependences of the scattered intensities in the case of the scattering by the allowed F 2g and the forbidden LO-type modes are experimentally obtained and theoretically interpreted. On the base of the investigation energies of the interband transitions in the Mg 2 Si are determined. It is found also that the resonant Raman scattering appears to be a powerful tool for characterization of a material with inclusions in it. In the particular case it is concluded that the Mg 2 Si phase is present in the form of a surface layer in the sample, prepared with implantation energy 40 keV and as low-dimensional precipitates, embedded in the silicon matrix, in the sample, prepared with the higher implantation energy

  4. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  5. Modification mechanism of eutectic silicon in Al–6Si–0.3Mg alloy with scandium

    Energy Technology Data Exchange (ETDEWEB)

    Patakham, Ussadawut [Manufacturing and Systems Engineering Program, Department of Production Engineering, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand); Kajornchaiyakul, Julathep [National Metal and Material Technology Center, National Science and Technology Development Agency, 114 Thailand Science Park, Klong Nueng, Klong Luang, Pathumthani 12120 (Thailand); Limmaneevichitr, Chaowalit, E-mail: chaowalit.lim@kmutt.ac.th [Manufacturing and Systems Engineering Program, Department of Production Engineering, Faculty of Engineering, King Mongkut’s University of Technology Thonburi, 126 Pracha-Utid Rd., Bangmod, Tungkhru, Bangkok 10140 (Thailand)

    2013-10-25

    Highlights: •Morphologies and growth of Sc and Sr-modified eutectic silicon resemble those of dendrites. •Crystal orientation of eutectic aluminum depends on growth characteristics of eutectic silicon. •We report strong evidence of the occurrence of an impurity-induced twinning mechanism. -- Abstract: The modification mechanism of eutectic silicon in Al–6Si–0.3Mg alloy with scandium was studied. The crystallographic orientation relationships between primary dendrites and the eutectic phase of unmodified and modified Al–6Si–0.3 Mg alloys were determined using electron backscatter diffraction (EBSD). The orientation of aluminum modified with scandium in the eutectic phase was different from that of the neighboring primary dendrites. This result implies that eutectic aluminum grows epitaxially from the surrounding primary aluminum dendrites in the unmodified alloy and that eutectic aluminum grows competitively from the surrounding primary aluminum dendrites in the modified alloy. The pole figure maps of eutectic Si in the [1 0 0], [1 1 0] and [1 1 1] axes of the unmodified and Sc-modified alloys were different, suggesting that the eutectic Al and Si crystals in modified alloy growth are more isotropic and cover a larger set of directions. The lattice fringes of Si of the alloys with and without Sc modification were different in the TEM results. The lattice fringes of Si in modified alloy were found to be multiple twins. However, this was not observed in the unmodified alloy. The growth characteristic of eutectic Si crystal in modified alloy suggests the occurrence of multiple twinning reactions and the formation of a high density of twins. This modification mechanism by Sc is explained by the results of scanning electron microscopy (SEM), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analysis, which provide strong evidence of the occurrence of the impurity-induced twinning (IIT) mechanism.

  6. Metallurgical Parameters Controlling the Eutectic Silicon Charateristics in Be-Treated Al-Si-Mg Alloys.

    Science.gov (United States)

    Ibrahim, Mohamed F; Elgallad, Emad M; Valtierra, Salvador; Doty, Herbert W; Samuel, Fawzy H

    2016-01-27

    The present work was carried out on Al-7%Si-0.4%Mg-X alloy (where X = Mg, Fe, Sr or Be), where the effect of solidification rate on the eutectic silicon characteristics was investigated. Two solidification rates corresponding to dendrite arm spacings (DAS) of 24 and 65 μm were employed. Samples with 24 μm DAS were solution heat-treated at 540 °C for 5 and 12 h prior to quenching in warm water at 65 °C. Eutectic Si particle charateristics were measured using an image analyzer. The results show that the addition of 0.05% Be leads to partial modification of the Si particles. Full modification was only obtained when Sr was added in an amount of 150-200 ppm, depending on the applied solidification rate. Increasing the amount of Mg to 0.8% in Sr-modified alloys leads to a reduction in the effectiveness of Sr as the main modifier. Similar observations were made when the Fe content was increased in Be-treated alloys due to the Be-Fe interaction. Over-modification results in the precipitation of hard Sr-rich particles, mainly Al₄SrSi₂, whereas overheating causes incipient melting of the Al-Cu eutectic and hence the surrounding matrix. Both factors lead to a deterioration in the alloy mechanical properties. Furthermore, the presence of long, acicular Si particles accelerates the occurrence of fracture and, as a result, yields poor ductility. In low iron (less than 0.1 wt%) Al-Si-Mg alloys, the mechanical properties in the as cast, as well as heat treated conditions, are mainly controlled by the eutectic Si charatersitics. Increasing the iron content and, hence, the volume fraction of Fe-based intermetallics leads to a complex fracture mode.

  7. Metallurgical Parameters Controlling the Eutectic Silicon Charateristics in Be-Treated Al-Si-Mg Alloys

    Directory of Open Access Journals (Sweden)

    Mohamed F. Ibrahim

    2016-01-01

    Full Text Available The present work was carried out on Al-7%Si-0.4%Mg-X alloy (where X = Mg, Fe, Sr or Be, where the effect of solidification rate on the eutectic silicon characteristics was investigated. Two solidification rates corresponding to dendrite arm spacings (DAS of 24 and 65 μm were employed. Samples with 24 μm DAS were solution heat-treated at 540 °C for 5 and 12 h prior to quenching in warm water at 65 °C. Eutectic Si particle charateristics were measured using an image analyzer. The results show that the addition of 0.05% Be leads to partial modification of the Si particles. Full modification was only obtained when Sr was added in an amount of 150–200 ppm, depending on the applied solidification rate. Increasing the amount of Mg to 0.8% in Sr-modified alloys leads to a reduction in the effectiveness of Sr as the main modifier. Similar observations were made when the Fe content was increased in Be-treated alloys due to the Be-Fe interaction. Over-modification results in the precipitation of hard Sr-rich particles, mainly Al4SrSi2, whereas overheating causes incipient melting of the Al-Cu eutectic and hence the surrounding matrix. Both factors lead to a deterioration in the alloy mechanical properties. Furthermore, the presence of long, acicular Si particles accelerates the occurrence of fracture and, as a result, yields poor ductility. In low iron (less than 0.1 wt% Al-Si-Mg alloys, the mechanical properties in the as cast, as well as heat treated conditions, are mainly controlled by the eutectic Si charatersitics. Increasing the iron content and, hence, the volume fraction of Fe-based intermetallics leads to a complex fracture mode.

  8. Estimate of annual daily maximum rainfall and intense rain equation for the Formiga municipality, MG, Brazil

    Directory of Open Access Journals (Sweden)

    Giovana Mara Rodrigues Borges

    2016-11-01

    Full Text Available Knowledge of the probabilistic behavior of rainfall is extremely important to the design of drainage systems, dam spillways, and other hydraulic projects. This study therefore examined statistical models to predict annual daily maximum rainfall as well as models of heavy rain for the city of Formiga - MG. To do this, annual maximum daily rainfall data were ranked in decreasing order that best describes the statistical distribution by exceedance probability. Daily rainfall disaggregation methodology was used for the intense rain model studies and adjusted with Intensity-Duration-Frequency (IDF and Exponential models. The study found that the Gumbel model better adhered to the data regarding observed frequency as indicated by the Chi-squared test, and that the exponential model best conforms to the observed data to predict intense rains.

  9. Influence of MgO containing strontium on the structure of ceramic film formed on grain oriented silicon steel surface

    Directory of Open Access Journals (Sweden)

    Daniela C. Leite Vasconcelos

    1999-07-01

    Full Text Available The oxide layer formed on the surface of a grain oriented silicon steel was characterized by SEM and EDS. 3% Si steel substrates were coated by two types of slurries: one formed by MgO and water and other formed by MgO, water and SrSO4. The ceramic films were evaluated by SEM, EDS and X-ray diffraction. Depth profiles of Fe, Si and Mg were obtained by GDS. The magnetic core losses (at 1.7 Tesla, 60 Hz of the coated steel samples were evaluated as well. The use of MgO containing strontium reduced the volume fraction of forsterite particles beneath the outermost ceramic layer. It was observed a reduced magnetic core loss with the use of the slurry with MgO containing strontium.

  10. Formation mechanism and control of MgO·Al2O3 inclusions in non-oriented silicon steel

    Science.gov (United States)

    Sun, Yan-hui; Zeng, Ya-nan; Xu, Rui; Cai, Kai-ke

    2014-11-01

    On the basis of the practical production of non-oriented silicon steel, the formation of MgO·Al2O3 inclusions was analyzed in the process of "basic oxygen furnace (BOF) → RH → compact strip production (CSP)". The thermodynamic and kinetic conditions of the formation of MgO·Al2O3 inclusions were discussed, and the behavior of slag entrapment in molten steel during RH refining was simulated by computational fluid dynamics (CFD) software. The results showed that the MgO/Al2O3 mass ratio was in the range from 0.005 to 0.017 and that MgO·Al2O3 inclusions were not observed before the RH refining process. In contrast, the MgO/Al2O3 mass ratio was in the range from 0.30 to 0.50, and the percentage of MgO·Al2O3 spinel inclusions reached 58.4% of the total inclusions after the RH refining process. The compositions of the slag were similar to those of the inclusions; furthermore, the critical velocity of slag entrapment was calculated to be 0.45 m·s-1 at an argon flow rate of 698 L·min-1, as simulated using CFD software. When the test steel was in equilibrium with the slag, [Mg] was 0.00024wt%-0.00028wt% and [Al]s was 0.31wt%-0.37wt%; these concentrations were theoretically calculated to fall within the MgO·Al2O3 formation zone, thereby leading to the formation of MgO·Al2O3 inclusions in the steel. Thus, the formation of MgO·Al2O3 inclusions would be inhibited by reducing the quantity of slag entrapment, controlling the roughing slag during casting, and controlling the composition of the slag and the MgO content in the ladle refractory.

  11. Quasi-2D silicon structures based on ultrathin Me2Si (Me = Mg, Ca, Sr, Ba) films

    Science.gov (United States)

    Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Borisenko, V. E.; Skorodumova, N. V.

    2018-04-01

    By means of ab initio calculations with hybrid functionals we show a possibility for quasi-2D silicon structures originated from semiconducting Mg2Si, Ca2Si, Sr2Si and Ba2Si silicides to exist. Such a 2D structure is similar to the one of transition metal chalcogenides where silicon atoms form a layer in between of metal atoms aligned in surface layers. These metal surface atoms act as pseudo passivation species stabilizing crystal structure and providing semiconducting properties. Considered 2D Mg2Si, Ca2Si, Sr2Si and Ba2Si have band gaps of 1.14 eV, 0.69 eV, 0.33 eV and 0.19 eV, respectively, while the former one is also characterized by a direct transition with appreciable oscillator strength. Electronic states of the surface atoms are found to suppress an influence of the quantum confinement on the band gaps. Additionally, we report Sr2Si bulk in the cubic structure to have a direct band gap of 0.85 eV as well as sizable oscillator strength of the first direct transition.

  12. Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Oluwagbenga Babajide Fatile

    2014-10-01

    Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

  13. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2005-03-01

    The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  14. Towards scalable binderless electrodes: carbon coated silicon nanofiber paper via Mg reduction of electrospun SiO2 nanofibers.

    Science.gov (United States)

    Favors, Zachary; Bay, Hamed Hosseini; Mutlu, Zafer; Ahmed, Kazi; Ionescu, Robert; Ye, Rachel; Ozkan, Mihrimah; Ozkan, Cengiz S

    2015-02-06

    The need for more energy dense and scalable Li-ion battery electrodes has become increasingly pressing with the ushering in of more powerful portable electronics and electric vehicles (EVs) requiring substantially longer range capabilities. Herein, we report on the first synthesis of nano-silicon paper electrodes synthesized via magnesiothermic reduction of electrospun SiO2 nanofiber paper produced by an in situ acid catalyzed polymerization of tetraethyl orthosilicate (TEOS) in-flight. Free-standing carbon-coated Si nanofiber binderless electrodes produce a capacity of 802 mAh g(-1) after 659 cycles with a Coulombic efficiency of 99.9%, which outperforms conventionally used slurry-prepared graphite anodes by over two times on an active material basis. Silicon nanofiber paper anodes offer a completely binder-free and Cu current collector-free approach to electrode fabrication with a silicon weight percent in excess of 80%. The absence of conductive powder additives, metallic current collectors, and polymer binders in addition to the high weight percent silicon all contribute to significantly increasing capacity at the cell level.

  15. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Shea, S. P.

    2004-04-01

    The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  16. Selected Silicon Carbide Reports from Rutgers Materials Center of Excellence Annual Reports, 2010-2011

    Science.gov (United States)

    2015-03-01

    function of eiej and taking the second energy derivative with respect to ei and ej. The hydrostatic pressure is obtained by calculating the change...presence of unreacted Si and C, as well as magnesium (Mg), Al, calcium (Ca), titanium (Ti), vanadium (V), iron (Fe), and zirconium (Zr) impurities

  17. Evaluation of Effect of Silicon on NaCl Tolerance in Annual Medicago scutellata L.

    Directory of Open Access Journals (Sweden)

    M Azizi

    2016-07-01

    Full Text Available Introduction Salinity is one of the most important stress resulting depletion of vegetation in large areas of the world including some regions of Iran. Reduction of plant growth due to salinity occurs with a range of mechanisms, including low external water potential, ion toxicity and interfere with the uptake. Silicon (Si is the second most abundant element in soil and could efficiently mitigate the effects of various biotic and abiotic stresses, such as drought, heavy metal toxicity and salinity on plants. Medicago scutellata is an important leguminous forage crop throughout the world that could increase soil nitrogen content via reduction of atmospheric nitrogen. To our knowledge, no study have examined the interaction of salinity and Si nutrition in Medicago scutellata or how the beneficial effects of Si in salt-stressed M. scutellata plants (if any are exerted. Accordingly, the aim of the present study was to evaluate the effect of silicon nutrition on salt tolerance of Medicago scutellata. Materials and Methods Seeds of alfalfa (Medicago scutellata L. were sterilized with a 2.5% sodium hypochlorite solution and were incubated in a moistened paper towel. Then, they germinated in the dark at 255  C for 48 h. Healthy seedlings of uniform sizes were selected for hydroponic culture (Hoagland solution in a 10×15×15 cm plastic pots. A factorial experiment carried out based on a completely randomized design with two factors. The first factor was salinity, including 0 and 100 mM NaCl and the second was silicon nutrition, including 0, 0.75 and 1.5 m.M sodium silicate. The pH of the nutrient solution was adjusted daily at 6.4  0.2 and nutrient solution was refreshed weekly. During the experiment, maximum and minimum air temperatures were 30ºC and 21ºC respectively, and the mean relative humidity was 67%. Four weeks after exerting the treatments, plants were harvested and used for the assessment of growth parameters and chemical analyses

  18. Electronic and local atomistic structure of MgSiO3 glass under pressure: a study of X-ray Raman scattering at the silicon and magnesium L-edges

    Science.gov (United States)

    Fukui, Hiroshi; Hiraoka, Nozomu

    2018-02-01

    We applied X-ray Raman scattering technique to MgSiO3 glass, a precursor to magnesium silicate melts, with respect to magnesium and silicon under high-pressure conditions as well as some polycrystalline phases of MgSiO3 at ambient conditions. We also performed ab initio calculations to interpret the X-ray Raman spectra. Experimentally obtained silicon L-edge spectra indicate that the local environment around silicon started changing at pressure above 10 GPa, where the electronic structure of oxygen is known to change. In contrast, the shape of the magnesium L-edge spectrum changed below 10 GPa. This indicates that the magnesium sites in MgSiO3 glass first distort and that the local structure around magnesium shows a wide variation under pressure. The framework structure consisting of silicon and oxygen changed above 10 GPa, where the coordination number of silicon was more than four. Our results imply that 6-oxygen-coordinated silicon was formed above 20 GPa.

  19. Preparation and characterization of a calcium-phosphate-silicon coating on a Mg-Zn-Ca alloy via two-step micro-arc oxidation.

    Science.gov (United States)

    Dou, Jinhe; Chen, Yang; Chi, Yiming; Li, Huancai; Gu, Guochao; Chen, Chuanzhong

    2017-06-14

    Magnesium alloys are the most promising implant materials due to their excellent biodegradability. However, their high degradation rate limits their practical application. In this study, we produced a calcium-phosphate (Ca-P) coating and a calcium-phosphate-silicon (Ca-P-Si) coating via one-step and two-step micro-arc oxidation processes, respectively. The microstructure and chemical composition of the MAO coatings were characterized using SEM, XRD and EDS. The degradation behaviors of the MAO coatings and the substrate were investigated using electrochemical techniques and immersion tests in simulated body fluid (SBF). The results show that the silicate was successfully incorporated into the Ca-P coating in the second MAO step, and this also increased the thickness of the coating. The Ca-P-Si coatings remarkably reduced the corrosion rate of the Mg alloy and Ca-P coating during 18 days of immersion in SBF. In addition, the bone-like apatite layer on the sample surface demonstrated the good biomineralization ability of the Ca-P-Si coating. Potentiodynamic polarization results showed that the MAO coating could clearly enhance the corrosion resistance of the Mg alloy. Moreover, we propose the growth mechanism of the MAO coating in the second step.

  20. Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

    Energy Technology Data Exchange (ETDEWEB)

    Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

    1999-11-11

    AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

  1. Thermodynamics of Boron Removal from Silicon Using CaO-MgO-Al2O3-SiO2 Slags

    Science.gov (United States)

    Jakobsson, Lars Klemet; Tangstad, Merete

    2018-04-01

    Slag refining is one of few metallurgical methods for removal of boron from silicon. It is important to know the thermodynamic properties of boron in slags to understand the refining process. The relation of the distribution coefficient of boron to the activity of silica, partial pressure of oxygen, and capacity of slags for boron oxide was investigated. The link between these parameters explains why the distribution coefficient of boron does not change much with changing slag composition. In addition, the thermodynamic properties of dilute boron oxide in CaO-MgO-Al2O3-SiO2 slags was determined. The ratio of the activity coefficient of boron oxide and silica was found to be the most important parameter for understanding changes in the distribution coefficient of boron for different slags. Finally, the relation between the activity coefficient of boron oxide and slag structure was investigated. It was found that the structure can explain how the distribution coefficient of boron changes depending on slag composition.

  2. Silicon ribbon growth by a capillary action shaping technique. Annual report (Quarterly technical progress report No. 9)

    Energy Technology Data Exchange (ETDEWEB)

    Schwuttke, G.H.; Ciszek, T.F.; Kran, A.

    1977-10-01

    Progress on the technological and economical assessment of ribbon growth of silicon by a capillary action shaping technique is reported. Progress in scale-up of the process from 50 mm to 100 mm ribbon widths is presented, the use of vitreous carbon as a crucible material is analyzed, and preliminary tests of CVD Si/sub 3/N/sub 4/ as a potential die material are reported. Diffusion length measurements by SEM, equipment and procedure for defect display under MOS structure in silicon ribbon for lifetime interpretation, and an assessment of ribbon technology are discussed. (WHK)

  3. Corrosion behaviour of groundnut shell ash and silicon carbide hybrid reinforced Al-Mg-Si alloy matrix composites in 3.5% NaCl and 0.3M H2SO4 solutions

    Directory of Open Access Journals (Sweden)

    Kenneth Kanayo ALANEME

    2015-05-01

    Full Text Available The corrosion behaviour of Al-Mg-Si alloy based composites reinforced with groundnut shell ash (GSA and silicon carbide (SiC was investigated. The aim is to assess the corrosion properties of Al-Mg-Si alloy based hybrid reinforced composites developed using different mix ratios of GSA (a cheaply processed agro waste derivative which served as partial replacement for SiC and SiC as reinforcing materials. GSA and SiC mixed in weight ratios 0:1, 1:3, 1:1, 3:1, and 1:0 were utilized to prepare 6 and 10 wt% of the reinforcing phase with Al‐Mg‐Si alloy as matrix using two‐step stir casting method. Mass loss and corrosion rate measurement was used to study the corrosion behaviour of the produced composites in 3.5% NaCl and 0.3M H2SO4 solutions. The results show that the Al-Mg-Si alloy based composites containing 6 and 10 wt% GSA and SiC in varied weight ratios were resistant to corrosion in 3.5% NaCl solution. The composites were however more susceptible to corrosion in 0.3M H2SO4 solution (in comparison with the 3.5% NaCl solution. It was noted that the Al-Mg-Si/6 wt% GSA-SiC hybrid composite grades containing GSA and SiC in weight ratio 1:3 and 3:1 respectively exhibited superior corrosion resistance in the 0.3M H2SO4 solution compared to other composites produced for this series. In the case of the Al-Mg-Si/10 wt% GSA-SiC hybrid composite grades, the corrosion resistance was relatively superior for the composites containing a greater weight ratio of GSA (75% and 100% in 0.3M H2SO4 solution.

  4. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  5. Influence of Mg2+ on CaCO3 precipitation during subsurface reactive transport in a homogeneous silicon-etched pore network

    Energy Technology Data Exchange (ETDEWEB)

    Boyd, Victoria [Univ. of Illinois, Urbana-Champaign, IL (United States); Yoon, Hongkyu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zhang, Changyong [Exxon Mobil Upstream Research Company, Houston, TX (United States); Oostrom, Martinus [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hess, Nancy J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Fouke, Bruce W. [Univ. of Illinois, Urbana-Champaign, IL (United States); Valocchi, Albert J. [Univ. of Illinois, Urbana-Champaign, IL (United States); Werth, Charles J. [Univ. of Illinois, Urbana-Champaign, IL (United States)

    2014-04-04

    Calcium carbonate (CaCO3) geochemical reactions exert a fundamental control on the evolution of porosity and permeability in shallow-to-deep subsurface siliciclastic and limestone rock reservoirs. As a result, these carbonate water-rock interactions play a critically important role in research on groundwater remediation, geological carbon sequestration, and hydrocarbon exploration. A study was undertaken to determine the effects of Mg2+ concentration on CaCO3 crystal morphology, precipitation rate, and porosity occlusion under flow and mixing conditions similar to those in subsurface aquifers.

  6. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. Mg/Ca ratio in fertilization and agricultural soils, Mg percent of liming ...

    African Journals Online (AJOL)

    Strong increase of NPK (nitrogen, phosphorus and potassium) in mineral fertilization (fm) included relative delay in Mg supplementation and dilution in plant available silicon (Si) via recycled nutrients (rcl). (Silicon is not included in essential fertilizers in Finland.) Methods: We have assessed old data on Ca and Mg in ...

  8. Development of advanced solid state radiation detectors: mercuric iodide and high gain silicon avalanche structures. Annual progress report, December 1, 1984-November 30, 1985

    International Nuclear Information System (INIS)

    Huth, G.C.; Dabrowski, A.J.

    1986-04-01

    This report covers the period from December 1984 through November 1985 for this research project sponsored by the Office of Health and Environmental Research of the Dept. of Energy. This work has two primary research objectives. The first is continuing development of the material mercuric iodide (HgI 2 ) and its applications to energy dispersive x-ray analysis and gamma ray spectrometry. The second task involves investigation of silicon ''avalanche'' (internal electron gain) radiation detector structures fabricated from new neutron transmutation doped (NTD) silicon single crystal

  9. Development of an In-Line Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells: Annual Subcontract Report, June 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Sinton, R. A.

    2004-04-01

    Under the PV Manufacturing R&D subcontract''Development of an In-Line, Minority-Carrier Lifetime Monitoring Tool for Process Control during Fabrication of Crystalline Silicon Solar Cells'', Sinton Consulting developed prototypes for several new instruments for use in the manufacture of silicon solar cells. These instruments are based on two families of R&D instruments that were previously available, an illumination vs. open-circuit-voltage technique and the quasi-steady state RF photoconductance technique for measuring minority-carrier lifetime. Compared to the previous instruments, the new prototypes are about 20 times faster per measurement, and have automated data analysis that does not require user intervention even when confronted by challenging cases. For example, un-passivated multi-crystalline wafers with large variations in lifetime and trapping behavior can be measured sequentially without error. Five instruments have been prototyped in this project to date, including a block tester for evaluating cast or HEM silicon blocks, a CZ ingot tester, an FZ boule tester for use with long-lifetime silicon, and an in-line sample head for measuring wafers. The CZ ingot tester and the FZ boule tester are already being used within industry and there is interest in the other prototypes. For each instrument, substantial R&D work was required in developing the device physics and analysis as well as for the hardware. This work has been documented in a series of application notes and conference publications, and will result in significant improvements for both the R&D and the industrial types of instruments.

  10. Array Automated Assembly Task Low Cost Silicon Solar Array Project. Phase 2. Annual technical report, September 20, 1977-December 31, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Rhee, Sang S.; Jones, Gregory T.; Allison, Kimberly L.

    1978-01-01

    This program was conducted to develop and demonstrate those solar cells and module process steps which have the technological readiness or capability to achieve the 1986 LSA goals. Results are reported. Seventeen process groups were investigated. Very promising results were achieved. A laserscribe computer program was developed. It demonstrated that silicon solar cells could be trimmed and holed by laser without causing mechanical defects (i.e., microcracks) nor any major degradation in solar cell electrical performance. The silicon wafer surface preparation task demonstrated a low-cost, high throughput texturizing process readily adaptable to automation. Performance verification tests of a laser scanning system showed a limited capability to detect hidden cracks or defects in solar cells. A general review of currently available thick film printing equipment provided the indication that state-of-the-art technology can adequately transform the capability of current printing machines to the elevated rate of 7200 wafers per hour. The LFE System 8000 silicon nitride plasma deposition system with the inclusion of minor equipment modifications was shown to be consistent with the 1986 LSA pricing goals. The performance verification test of the silicon nitride A.R. coating process provided the result that texturized, A.R. coated solar cells display a 14.1% improvement in electrical performance over identical solar cells without an A.R. coating. A new electroless nickel plating system was installed and demonstrated a low-cost, high throughput process readily adaptable to automation. A multiple wafer dipping method was investigated and operational parameters defined. A flux removal method consisting of a three stage D.I. water cascade rinse system with ultrasonic agitator was found to be very promising. Also, a SAMICS cost analysis was performed. (WHK)

  11. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  12. Role of bolA and rpoS genes in biofilm formation and adherence pattern by Escherichia coli K-12 MG1655 on polypropylene, stainless steel, and silicone surfaces.

    Science.gov (United States)

    Adnan, Mohd; Sousa, Ana Margarida; Machado, Idalina; Pereira, Maria Olivia; Khan, Saif; Morton, Glyn; Hadi, Sibte

    2017-06-01

    Escherichia coli has developed sophisticated means to sense, respond, and adapt in stressed environment. It has served as a model organism for studies in molecular genetics and physiology since the 1960s. Stress response genes are induced whenever a cell needs to adapt and survive under unfavorable growth conditions. Two of the possible important genes are rpoS and bolA. The rpoS gene has been known as the alternative sigma (σ) factor, which controls the expression of a large number of genes, which are involved in responses to various stress factors as well as transition to stationary phase from exponential form of growth. Morphogene bolA response to stressed environment leads to round morphology of E. coli cells, but little is known about its involvement in biofilms and its development or maintenance. This study has been undertaken to address the adherence pattern and formation of biofilms by E. coli on stainless steel, polypropylene, and silicone surfaces after 24 h of growth at 37 °C. Scanning electron microscopy was used for direct examination of the cell attachment and biofilm formation on various surfaces and it was found that, in the presence of bolA, E. coli cells were able to attach to the stainless steel and silicone very well. By contrast, polypropylene surface was not found to be attractive for E. coli cells. This indicates that bolA responded and can play a major role in the presence and absence of rpoS in cell attachment.

  13. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  14. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  15. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  16. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  17. Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

    Energy Technology Data Exchange (ETDEWEB)

    Poffo, C.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Lima, J.C. de, E-mail: fsc1jcd@fisica.ufsc.b [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Souza, S.M.; Triches, D.M. [Departamento de Engenharia Mecanica, Universidade Federal de Santa Catarina, Campus Universitario Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Grandi, T.A. [Departamento de Fisica, Universidade Federal de Santa Catarina, Campus Trindade, C.P. 476, 88040-900 Florianopolis, Santa Catarina (Brazil); Biasi, R.S. de [Secao de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil)

    2011-04-01

    Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 {sup o}C the heat transfer is controlled by crystalline component.

  18. Photoacoustic study of nanocrystalline silicon produced by mechanical grinding

    International Nuclear Information System (INIS)

    Poffo, C.M.; Lima, J.C. de; Souza, S.M.; Triches, D.M.; Grandi, T.A.; Biasi, R.S. de

    2011-01-01

    Mechanical grinding (MG) was used to produce nanocrystalline silicon and its thermal and transport properties were investigated by photoacoustic absorption spectroscopy (PAS). The experimental results suggest that in as-milled nanocrystalline silicon for 10 h the heat transfer through the crystalline and interfacial components is similar, and after annealed at 470 o C the heat transfer is controlled by crystalline component.

  19. Silicon mediated biochemical changes in wheat under salinized and ...

    African Journals Online (AJOL)

    Silicon (Si) can alleviate salinity damage, a major threat to agriculture that causes instability in wheat production. We report on the effects of silicon (150 mg L-1) on the morphological, physiological and biochemical traits in wheat (Triticum aestivum L.) cultivars (salt sensitive; Auqab-2000 and salt tolerant; SARC-5) differing ...

  20. Elaboration and characterization of metallurgical silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Barbouche, M; Hajji, M; Krout, F; Ezzaouia, H

    2015-01-01

    There is a small quantity of participants in the global market of silicon, mainly from the developed countries. It should be noticed also that production of metallurgical silicon Mg-Si is among the most important steps to produce solar grade silicon and photovoltaic panels. Therefore, in this paper we focused on the growth of Mg-Si by carbothermal reduction of silica. An investigation was made using FT-IR characterization to study the effect of process conditions (temperature, atmosphere, duration) in Mg-Si production. Raman spectroscopy was used to investigate the produced Mg-Si. Based on these results, we established a pilot line production of metallurgical silicon at the 'CRTEn' in Tunisia

  1. FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of particle nonacceleration growth type silicon thin-film crystals); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1978-03-01

    As part of the research and development project for producing photovoltaic power generation systems at reduced cost, the R and D efforts are made for producing particle nonacceleration growth type silicon thin-film crystals. The research items are (1) research on thin-film crystals, and (2) research on cell-structuring method. The item (1) studies quantities, types and electrical properties of impurities and crystal defects in the polycrystalline ingots, produced by the Czochralski method from metal grade silicon and purified metal grade silicon stocks. Next, the substrate prepared above is coated with a thin film of silicon by the vapor-phase growth method with dichlorosilane as the source, to evaluate the thin-film crystals by measuring the crystal defects and lifetime of small numbers of carriers. The item (2) studies the effects of the solder dipping method. In addition, unevenness of photoelectric current is analyzed by a laser scanning microscope, to investigate the effects of the secondary impurities and crystal defects in the substrate crystals on photoelectric current. As a result, it is found that conversion efficiency is improved by grading the hole concentration in the p-type activated layer. The targets of 10 to 20 m{sup 2} as the area and 7 to 8% as the conversion efficiency are attained by preparing the crystals again. (NEDO)

  2. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Effects of nanostructurized silicon on proliferation of stem and cancer cell.

    Science.gov (United States)

    Osminkina, L A; Luckyanova, E N; Gongalsky, M B; Kudryavtsev, A A; Gaydarova, A Kh; Poltavtseva, R A; Kashkarov, P K; Timoshenko, V Yu; Sukhikh, G T

    2011-05-01

    In vitro experiments showed that stem and cancer cells retained their viability on the surface of porous silicon with 10-100 nm nanostructures, but their proliferation was inhibited. Silicon nanoparticles of 100 nm in size obtained by mechanical grinding of porous silicon films or crystal silicon plates in a concentration below 1 mg/ml in solution did not modify viability and proliferation of mouse fibroblast and human laryngeal cancer cells. Additional ultrasonic exposure of cancer cells in the presence of 1 mg/ml silicon nanoparticles added to nutrient medium led to complete destruction of cells or to the appearance of membrane defects blocking their proliferation and initiating their apoptotic death.

  4. Obtaining of polycrystalline silicon for semiconductor industry

    International Nuclear Information System (INIS)

    Mukashev, F.; Nauryzbaev, M.; Kolesnikov, B.; Ivanov, Y.

    1996-01-01

    The purpose of the project is to create pilot equipment and optimize the process of obtaining polycrystalline silicon on semi-industrial level. In the past several decades, the historical experience in the developing countries has shown that one of the most promising ways to improve the economy,of a country is to establish semiconductor industry. First of all, the results can help increase defense, national security and create industrial production. The silane method, which has been traditionally' used for obtaining technical and polycrystalline silicon, is to obtain and then to pyrolyzed mono-and poly silanes. Although the traditional methods of obtaining silicon hydrides have specific advantages, such as utilizing by-products, they also have clear shortcomings, i.e. either low output of the ultimate product ( through hydrolysis of Mg 2 Si) or high contents of by-products in it or high contents of dissolving vapors (through decomposing Mg 2 Si in non-water solutions)

  5. Silicon photonics at the University of Surrey

    Science.gov (United States)

    Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

    2009-05-01

    Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

  6. Release of low molecular weight silicones and platinum from silicone breast implants.

    Science.gov (United States)

    Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

    1997-12-01

    We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

  7. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  8. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  9. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  10. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  11. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  12. FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of vertically drawn ribbon crystals of silicon); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Silicon tatehiki ribon kessho no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1978-03-31

    This project is aimed at establishment of ribbon crystal production techniques and development of photovoltaic power generation systems incorporating the ribbon crystals, in order to greatly reduce cost of photovoltaic power generation systems. The research efforts in this fiscal year is focused on development of the techniques for continuously growing the ribbons, to attain the above goal by accelerating growth of the ribbon crystals in unit time and clarifying, in the early stage, the problems to be solved before commercializing the ribbon crystals for the future solar cells. The major research results are (1) development of the method for vertically drawing ribbon crystals of silicon, and (2) analysis of the vertically drawn ribbon crystals of silicon. For the item (1), the technological development efforts are focused on continuously drawing mechanisms and furnace for continuous drawing, with the structural studies as the center for the former and solution of heat-related problems for the latter, which eventually lead to development of a 800 mm long ribbon crystal passing over the roll. For the item (2), the crystal structure is analyzed by the electron channeling pattern method. The results suggest that use of a p-type substrate can improve average efficiency of the ribbon crystal type solar cell. (NEDO)

  13. FY 1979 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of vertically drawn ribbon crystals of silicon); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Silicon tatehiki ribon kessho no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1980-03-01

    The efforts in this fiscal year for development of methods for vertically drawing ribbon crystals of silicon are directed to the following items, in order to further improve the techniques for vertically drawing two or more ribbon crystals on a continuous basis, developed in the previous fiscal year: (1) tests of the drawing apparatus, developed in the previous fiscal year, to deepen the techniques for drawing the ribbon crystals, (2) modification of the above apparatus to further develop the apparatus for vertically drawing two or more ribbon crystals on a continuous basis, (3) comparison of drawing a single ribbon crystal, conducted separately, with drawing two or more ribbon crystals, to clarify the problems involved in the latter, and (4) basic investigations on the materials for the furnace internals exposed to high temperature, other than the carbon material used at present. The vertically drawn ribbon crystals of silicon is investigated, based on the results obtained in the previous fiscal year that ribbon crystal quality depends on impurities present therein, mainly for (1) quantitative analysis of the impurity elements present in the ribbon crystal, (2) relationship between impurity elements and characteristics of the solar cells made on a trial basis, and (3) investigations on local concentration of the impurity elements. (NEDO)

  14. Implementation of a Comprehensive On-Line Closed-Loop Diagnostic System for Roll-to-Roll Amorphous Silicon Solar Cell Production: Annual Report, Year Two; 1 September 2003--31 August 2004

    Energy Technology Data Exchange (ETDEWEB)

    Ellison, T.

    2005-02-01

    Energy Conversion Devices, Inc. (ECD) has developed and built 7 generations of roll-to-roll amorphous silicon PV production equipment. In the ECD/United Solar Ovonic production process, we deposit about a 1-mm-thick, 12-layer coating consisting of a metal/oxide backreflector, a - layer a-Si/a-SiGe alloy triple-junction solar cell, and a top transparent conductive oxide coating onto 125-mm-thick, 35.5-cm-wide stainless steel webs in a series of three roll-to-roll deposition machines. ECD has now completed the Phase II work for this program. In the following report, we summarize the Phase II work in each of these tasks. We have involved United Solar production personnel in each of these Tasks. This is important for two reasons: Firstly, the collaboration of ECD and United Solar personnel keeps the projects responsive to the developing needs at United Solar. Secondly, most of the tasks affect operations and consequently need the support of United Solar production and QA/QC managers. In the process, we have developed a good working relationship between the production personnel and good balance between optimizing production, while also ''adiabatically'' improving the manufacturing equipment.

  15. Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

    Science.gov (United States)

    Kim, Il-Ho

    2018-05-01

    Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

  16. Effect of acid leaching conditions on impurity removal from silicon doped by magnesium

    Directory of Open Access Journals (Sweden)

    Stine Espelien

    2017-07-01

    Full Text Available The effect of magnesium addition into a commercial silicon and its leaching refining behavior is studied for producing solar grade silicon feedstock. Two different levels of Mg is added into a commercial silicon and the leaching of the produced alloys by 10% HCl solution at 60 ℃ for different durations is performed. It is shown that the microstructure of the alloy and in particular the distribution of eutectic phases is dependent on the amount of the added Mg. Moreover, the metallic impurities in silicon such as Fe, Al, Ca and Ti are mainly forming silicide particles with different compositions. These silicides are physically more detached from the primary silicon grains and their removal through chemical and physical separation in leaching is better for higher Mg additions. It is observed that the leaching is more effective for the purification of smaller silicon particles produced from each Mg-doped silicon alloy. It is shown that acid leaching by the applied method is effective to reach more than 70% of phosphorous removal. It is also shown that the purity of silicon is dependent on the total Mg removal and effectiveness of leaching on removing the Mg2Si phase.

  17. Implementation of a Comprehensive On-Line Closed-Loop Diagnostic System for Roll-to-Roll Amorphous Silicon Solar Cell Production: Phase I Annual Report, 23 April 2003--31 August 2003

    Energy Technology Data Exchange (ETDEWEB)

    Ellison, T.

    2004-08-01

    This subcontract report describes how Energy Conversion Devices, Inc., has developed and built 7 generations of roll-to-roll amorphous silicon PV production equipment. In the ECD/United Solar production process, we deposit about a 1-mm-thick, 12-layer coating consisting of a metal/oxide backreflector, a 9-layer a-Si/a-SiGe alloy triple-junction solar cell, and top transparent conductive oxide coating onto 125-mm-thick, 35.5-cm-wide stainless-steel webs in a series of three roll-to-roll deposition machines. In the PV Manufacturing R&D 6 program, ECD is building upon these accomplishments to enhance the operation of the present production machine, and lay the foundation for improvements in the next-generation machine. ECD has completed the Phase I work for the first two Tasks, and will complete the Phase I work for the second two tasks within the next two months. In the following report, we summarize the Phase I work in each of these tasks. We have involved United Solar production personnel in each of these Tasks. This is important for two reasons: First, the collaboration of ECD and United Solar personnel keeps the projects responsive to the developing needs at United Solar; and most of the tasks affect operations and consequently need the support of United Solar production and QA/QC managers. In the process we have developed a good working relationship between the production personnel, whose mantra is''change nothing,'' and the R&D personnel, who mantra is''change everything.''

  18. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  19. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  20. NERSC 2001 Annual Report; ANNUAL

    International Nuclear Information System (INIS)

    Hules, John

    2001-01-01

    The National Energy Research Scientific Computing Center (NERSC) is the primary computational resource for scientific research funded by the DOE Office of Science. The Annual Report for FY2001 includes a summary of recent computational science conducted on NERSC systems (with abstracts of significant and representative projects); information about NERSC's current systems and services; descriptions of Berkeley Lab's current research and development projects in applied mathematics, computer science, and computational science; and a brief summary of NERSC's Strategic Plan for 2002-2005

  1. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  2. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  3. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  4. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  5. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  6. Annual report

    International Nuclear Information System (INIS)

    1986-01-01

    This is the thirty-ninth annual report of the Atomic Energy Control Board. The period covered by this report is the year ending March 31, 1986. The Atomic Energy Control Board (AECB) was established in 1946, by the Atomic Energy Control Act (AEC Act), (Revised Statues of Canada (R.S.C.) 1970 cA19). It is a departmental corporation (Schedule B) within the meaning and purpose of the Financial Administration Act. The AECB controls the development, application and use of atomic energy in Canada, and participates on behalf of Canada in international measures of control. The AECB is also repsonsible for the administration of the Nuclear Liability Act, (R.S.C. 1970 c29 1st Supp) as amended, including the designation of nuclear installations and the prescription of basic insurance to be carried by the operators of such nuclear installations. The AECB reports to Parliament through a designated Minister, currently the Minister of Energy, Mines and Resources

  7. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others

    1996-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  8. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  9. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  10. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  11. Mg-lattice associations in red coralline algae

    Science.gov (United States)

    Kamenos, N. A.; Cusack, M.; Huthwelker, T.; Lagarde, P.; Scheibling, R. E.

    2009-04-01

    Recent investigations have shown red coralline algae to record ambient temperature in their calcite skeletons. Temperature recorded by variation in Mg concentrations within algal growth bands has sub-annual resolution and high accuracy. The conversion of Mg concentration to temperature is based on the assumption of Ca replacement by Mg within the algal calcite skeleton at higher temperatures. While Mg-temperature relationships in coralline algae have been calibrated for some species, the location of Mg within the calcite lattice remains unknown. Critically, if Mg is not a lattice component but associated with organic components this could lead to erroneous temperature records. Before coralline algae are used in large scale climate reconstructions it is therefore important to determine the location of Mg. Synchrotron Mg-X-ray absorbance near edge structure (XANES) indicates that Mg is associated with the calcite lattice in Lithothamnion glaciale (contemporary free-living, contemporary encrusting and sub-fossil free-living) and Phymatolithon calcareum (contemporary free-living) coralline algae. Mg is deposited within the calcite lattice in all seasons ( L. glaciale & P. calcareum) and thallus areas ( P. calcareum). These results suggest L. glaciale and P. calcareum are robust Mg-palaeotemperature proxies. We suggest that similar confirmation be obtained for Mg associations in other species of red coralline algae aiding our understanding of their role in climate reconstruction at large spatial scales.

  12. Polycrystalline Silicon: a Biocompatibility Assay

    International Nuclear Information System (INIS)

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-01

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  13. Effect of different seawater Mg

    NARCIS (Netherlands)

    Mewes, A.; Langer, G.; de Nooijer, L.J.; Bijma, J.; Reichart, G.J.

    2014-01-01

    Magnesium, incorporated in foraminiferal calcite (Mg/CaCC), is used intensively to reconstruct past seawater temperatures but, in addition to temperature, the Mg/CaCC of foraminiferal tests also depends on the ratio of Mg and Ca in seawater (Mg/CaSW). The physiological mechanisms responsible for

  14. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  15. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  16. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  17. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  18. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  19. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  20. Annual reports in inorganic and general syntheses 1974

    CERN Document Server

    Niedenzu, Kurt

    1975-01-01

    Annual Reports in Inorganic and General Syntheses-1974 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book discusses the chemistry of simple and complex metal hydrides of main groups I, II, and III, boron, aluminium, gallium, indium, thallium, silicon, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, chalcogens, halogens, and pseudohalogens. The text also describes the chemistry of scandium, yttrium, lanthanides, actinides, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, ma

  1. Annual reports in inorganic and general syntheses 1973

    CERN Document Server

    Niedenzu, Kurt

    1974-01-01

    Annual Reports in Inorganic and General Syntheses-1973 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book covers the synthetic aspects and structural or mechanistic features of elements, including the main group hydrides, alkali and alkaline earth elements, boron, aluminium, gallium, indium, thallium, silicon, germanium, tin, and lead, nitrogen, phosphorus, arsenic, antimony, bismuth, chalcogens, halogens and pseudohalogens, and noble gases. The text also discusses the synthetic aspects and structural or mechanistic features of

  2. Annual reports in inorganic and general syntheses 1972

    CERN Document Server

    Niedenzu, Kurt

    1973-01-01

    Annual Reports in Inorganic and General Syntheses-1972 presents an organized annual summary of synthetic developments in inorganic chemistry and its related areas. The book discusses alkali and alkaline earth elements, alloys, silver, gold, zinc, cadmium, mercury, boron, aluminum, gallium, indium, thallium, yttrium, scandium, lanthanides, actinides, titanium, zirconium, hafnium, Group V and VI transition elements, manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, osmium, rhodium, and iridium. The text also describes the chemistry of palladium, platinum, silicon, germanium, tin,

  3. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  4. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

  5. Making MgO/SiO2 Glasses By The Sol-Gel Process

    Science.gov (United States)

    Bansal, Narottam P.

    1989-01-01

    Silicon dioxide glasses containing 15 mole percent magnesium oxide prepared by sol-gel process. Not made by conventional melting because ingredients immiscible liquids. Synthesis of MgO/SiO2 glass starts with mixing of magnesium nitrate hexahydrate with silicon tetraethoxide, both in alcohol. Water added, and transparent gel forms. Subsequent processing converts gel into glass. Besides producing glasses of new composition at lower processing temperatures, sol-gel method leads to improved homogeneity and higher purity.

  6. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  7. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  8. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  9. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  10. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  11. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  12. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  13. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  14. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  15. Quarterly, Bi-annual and Annual Reports

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Quarterly, Bi-annual and Annual Reports are periodic reports issued for public release. For the deep set fishery these reports are issued quarterly and anually....

  16. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  17. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  18. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  19. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  20. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  1. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  2. [Effects of silicon on the ultrastructures of wheat radical cells under copper stress].

    Science.gov (United States)

    Zhang, Dai-Jing; Ma, Jian-Hui; Yang, Shu-Fang; Chen, Hui-Ting; Liu, Pei; Wang, Wen-Fei; Li, Chun-Xi

    2014-08-01

    To explore the alleviation effect of silicon on wheat growth under copper stress, cultivar Aikang 58 was chosen as the experimental material. The growth, root activities and root tip ultrastructures of wheat seedlings, which were cultured in Hoagland nutrient solution with five different treatments (control, 15 mg x L(-1) Cu2+, 30 mg x L(-1) Cu2+, 15 mg x L(-1) Cu2+ and 50 mg x L(-1) silicon, 30 mg x L(-1) Cu2+ and 50 mg x L(-1) silicon), were fully analyzed. The results showed that root length, plant height and root activities of wheat seedlings were significantly restrained under the copper treatments compared with the control (P effects were alleviated after adding silicon to copper-stress Hoagland nutrient solution. Under copper stress, the cell wall and cell membrane of wheat seedling root tips suffered to varying degrees of destruction, which caused the increase of intercellular space and the disappearance of some organelles. After adding silicon, the cell structure was maintained intact, although some cells and organelles were still slightly deformed compared with the control. In conclusion, exogenous silicon could alleviate the copper stress damages on wheat seedlings and cellular components to some extent.

  3. Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

    International Nuclear Information System (INIS)

    Galkin, N.G.; Galkin, K.N.; Dotsenko, S.A.; Goroshko, D.L.; Shevlyagin, A.V.; Chusovitin, E.A.; Chernev, I.M.

    2017-01-01

    By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

  4. A study on the effect of silicon content on mechanical properties

    International Nuclear Information System (INIS)

    Kwon, C.T.; Nam, T.W.; Lee, S.I.

    1978-01-01

    In Al-Si alloy, the variation of mechanical properties with silicon contents was investigated the silicon content being varied from 5% to 25%, and the effects of additives and refining elements were also studied. The results obtained are as follows: 1) Sodium treatment made the primary silicon crystals refined and spheroidized, and made the matrix structure intensified. The effect of P treatment on refining primary silicon crystals was greater then that of Na. 2) Tensile strength showed the maximum value at near the eutectic composition and was improved considerably by addition of Mg and treatment with Na. 3) The variation of matrix hardness with silicon contents was not perceptible and the hardness was improved by addition of Mg and treatment with Na. (author)

  5. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  6. Quasicrystal-reinforced Mg alloys.

    Science.gov (United States)

    Kyun Kim, Young; Tae Kim, Won; Hyang Kim, Do

    2014-04-01

    The formation of the icosahedral phase (I-phase) as a secondary solidification phase in Mg-Zn-Y and Mg-Zn-Al base systems provides useful advantages in designing high performance wrought magnesium alloys. The strengthening in two-phase composites (I-phase + α -Mg) can be explained by dispersion hardening due to the presence of I-phase particles and by the strong bonding property at the I-phase/matrix interface. The presence of an additional secondary solidification phase can further enhance formability and mechanical properties. In Mg-Zn-Y alloys, the co-presence of I and Ca 2 Mg 6 Zn 3 phases by addition of Ca can significantly enhance formability, while in Mg-Zn-Al alloys, the co-presence of the I-phase and Mg 2 Sn phase leads to the enhancement of mechanical properties. Dynamic and static recrystallization are significantly accelerated by addition of Ca in Mg-Zn-Y alloy, resulting in much smaller grain size and more random texture. The high strength of Mg-Zn-Al-Sn alloys is attributed to the presence of finely distributed Mg 2 Sn and I-phase particles embedded in the α -Mg matrix.

  7. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  8. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  9. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  10. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  11. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  12. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  13. Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

    International Nuclear Information System (INIS)

    Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

    2011-01-01

    Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

  14. Removal of inclusions from silicon

    Science.gov (United States)

    Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

    2009-11-01

    The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

  15. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  16. Silicon Tracking Upgrade at CDF

    International Nuclear Information System (INIS)

    Kruse, M.C.

    1998-04-01

    The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

  17. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  18. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  19. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  20. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  1. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  2. Mg doping of GaN by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lieten, R R; Buchowicz, G; Dubon, O; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Borghs, G

    2011-01-01

    We present a systematic study on the influence of growth conditions on the incorporation and activation of Mg in GaN layers grown by plasma-assisted molecular beam epitaxy. We show that high quality p-type GaN layers can be obtained on GaN-on-silicon templates. The Mg incorporation and the electrical properties have been investigated as a function of growth temperature, Ga : N flux ratio and Mg : Ga flux ratio. It was found that the incorporation of Mg and the electrical properties are highly sensitive to the Ga : N flux ratio. The highest hole mobility and lowest resistivity were achieved for slightly Ga-rich conditions. In addition to an optimal Ga : N ratio, an optimum Mg : Ga flux ratio was also observed at around 1%. We observed a clear Mg flux window for p-type doping of GaN : 0.31% 17 cm -3 and a mobility of 15 cm 2 V -1 s -1 . Temperature-dependent Hall effect measurements indicate an acceptor depth in these samples of 100 meV for a hole concentration of 5.5 x 10 17 cm -3 . The corresponding Mg concentration is 5 x 10 19 cm -3 , indicating approximately 1% activation at room temperature. In addition to continuous growth of Mg-doped GaN layers we also investigated different modulated growth procedures. We show that a modulated growth procedure has only limited influence on Mg doping at a growth temperature of 800 deg. or higher. This result is thus in contrast to previously reported GaN : Mg doping at much lower growth temperatures of 500 deg. C.

  3. Photovoltaic Program Branch annual report, FY 1989

    Energy Technology Data Exchange (ETDEWEB)

    Summers, K A [ed.

    1990-03-01

    This report summarizes the progress of the Photovoltaic (PV) Program Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30, 1989. The branch is responsible for managing the subcontracted portion of SERI's PV Advanced Research and Development Project. In fiscal year (FY) 1989, this included nearly 50 subcontracts, with a total annualized funding of approximately $13.1 million. Approximately two-thirds of the subcontracts were with universities, at a total funding of nearly $4 million. The six technical sections of the report cover the main areas of the subcontracted program: Amorphous Silicon Research, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, New Ideas, and University Participation. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1989, and future research directions. Each report will be cataloged individually.

  4. Porous silicon based anode material formed using metal reduction

    Science.gov (United States)

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  5. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  6. Update on the possible nutritional importance of silicon.

    Science.gov (United States)

    Nielsen, Forrest H

    2014-10-01

    Convincing evidence that silicon is a bioactive beneficial trace element continues to accumulate. The evidence, which has come from human, animal, and in vitro studies performed by several laboratories, indicate that silicon in nutritional and supra nutritional amounts promotes bone and connective tissue health, may have a modulating effect on the immune or inflammatory response, and has been associated with mental health. A plausible mechanism of action for the beneficial effects of silicon is the binding of hydroxyl groups of polyols such that it influences the formation and/or utilization of glycosaminoglycans, mucopolysaccharides, and collagen in connective tissue and bone. In addition, silicon may affect the absorption, retention or action of other mineral elements (e.g., aluminum, copper, magnesium). Based on findings from both animal and human experiments, an intake of silicon of near 25mg/d would be a reasonable suggestion for an adequate intake that would assure its nutritional benefits. Increased intakes of silicon through consuming unrefined grains, certain vegetables, and beverages and cereals made from grains should be recognized as a reasonable dietary recommendation. Published by Elsevier GmbH.

  7. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  8. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  9. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  10. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  11. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  12. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  13. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  14. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  15. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  16. DELPHI Silicon Tracker

    CERN Multimedia

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  17. ANSTO. Annual Report 1992-1993

    International Nuclear Information System (INIS)

    1993-11-01

    Significant events and achievements highlighted in the Annual Reports include: the Research Reactor Review, increase of external revenues by 12.5%, sales of Australian radioisotopes amounting to $8.5 M, regulatory approval for production of thallium-201 in National Medical Cyclotron, completion of first contracts with Wismut GmbH in Germany, production of a database of content of atmospheric particulate matter in air over NSW, word-wide licence agreement signed for further commercialization of blood clot radiopharmaceuticals, collaborative agreement signed with SURPAC Int. for development of geochemical speciation software, complete design of rings in HIFAR for silicon doping. ills., tabs

  18. NIR annual report 1987

    International Nuclear Information System (INIS)

    1988-01-01

    The fourth annual report of the Niedersaechsisches Institut fuer Radiooekologie (NIR) is intended to describe the scientific work of the institute and its members in 1987. The central part of this publication are the fourteen reports on scientific activities, to be divided into four large categories: - Behaviour of tritium in the atmosphere and the soil - on this, important new knowledge was gained in 1987 in an experiment in Canada on the release of this substance; - Investigations in the radioecology of iodine 129, the dependence of its mobility in the soil on humus substances and microorganisms, and its enrichment in the human thyroid gland; - Establishment of transfer factors in the food chain for fission products like cesium 137, cesium 134 and strontium 90 - this being a field where exact knowledge has regained great importance after the accident at Chernobyl; - Aerosol-physical investigations: on the one hand, to obtain data on the propagation of nutrient aerosols and aerosols carrying harmful substances in areas with vegetation, and on the other hand to measure 'snow-out' and 'fog-out' coefficients. To this are added a number of papers on the stability of the decontamination substance for cesium 137 - ammonium-iron-hexacyanoferrate (AIHCF) - in the soil, on the translocation of cesium in apple-trees, and on the improvement of the analytics for uranium and plutonium in environmental specimens. (orig./MG) [de

  19. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  20. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  1. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  2. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  3. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  4. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  5. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  6. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  8. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Number 15/696,426 Filing Date 6 September 2017 Inventor Charles J. Patrissi et al Address any questions concerning this matter to the...silicon-based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...design shown. [0032] It will be understood that many additional changes in the details, materials, steps and arrangement of parts, which have been

  9. The CMS silicon tracker

    International Nuclear Information System (INIS)

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  10. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  11. Silicon and Civilization,

    Science.gov (United States)

    1980-11-04

    of a diamond. 7. The particular physical and chemical properties of silicon resulted in the fact that in the periodic system it was found in the III...small quantities. Silica is found in blades of grass and grain, in reed and bamboo shoots, where it serves to stiffen the stalk. 2. Diatomite ... properties desired in technology. Quartz glass is very resistant to temperature change since it has a very small coefficient of thermal expansion, is

  12. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  13. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  14. Myasthenia Gravis (MG): Medical Management

    Science.gov (United States)

    ... take effect, prior to surgery or for myasthenic crisis. However, some people receive regular plasmapheresis or IVIg as a supplement to immunosuppressant drugs. Pregnancy In rare cases, pregnancy appears to trigger the onset of MG. ...

  15. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  16. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  17. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  18. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  19. Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

    International Nuclear Information System (INIS)

    Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

    2016-01-01

    Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

  20. Silicon in Imperata cylindrica (L.) P. Beauv: content, distribution, and ultrastructure.

    Science.gov (United States)

    Rufo, Lourdes; Franco, Alejandro; de la Fuente, Vicenta

    2014-07-01

    Silicon concentration, distribution, and ultrastructure of silicon deposits in the Poaceae Imperata cylindrica (L.) P. Beauv. have been studied. This grass, known for its medicinal uses and also for Fe hyperaccumulation and biomineralization capacities, showed a concentration of silicon of 13,705 ± 9,607 mg/kg dry weight. Silicon was found as an important constituent of cell walls of the epidermis of the whole plant. Silica deposits were found in silica bodies, endodermis, and different cells with silicon-collapsed lumen as bulliforms, cortical, and sclerenchyma cells. Transmission electron microscope observations of these deposits revealed an amorphous material of an ultrastructure similar to that previously reported in silica bodies of other Poaceae.

  1. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  2. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  3. Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

    2010-12-15

    The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

  4. TXRF analysis of trace metals in thin silicon nitride films

    International Nuclear Information System (INIS)

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  5. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  6. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  7. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  8. Production of rare earth-silicon-iron alloys

    International Nuclear Information System (INIS)

    Mehra, O.K.; Bose, D.K.; Gupta, C.K.

    1987-01-01

    At Metallurgy Division, BARC, improved procedures for producing rare earth-silicon alloys have been investigated. In these methods, reduction of mixed rare earth oxide by a ferro-silicon and aluminium mixture in combination with CaO-MgO flux/CaO-CaF 2 flux have been tried to prepare an alloy product with a higher rare earth recovery at a higher rare earth content than the present commercial production method. The rare earth recovery using CaO-CaF 2 was 85 per cent while in the case of CaO-MgO flux it was 76 per cent. The corresponding rare earth contents in the alloy correspond to 40 per cent and 55 per cent by weight respectively. (author)

  9. Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

    Science.gov (United States)

    Bhatt, R. T.; Palczer, A. R.

    1998-01-01

    Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

  10. The potential of postharvest silicon dips to regulate phenolics in ...

    African Journals Online (AJOL)

    This study investigated the ability of silicon dips to enhance the phenolic content in order to reduce the incidence of chilling injury in lemon fruit. Fruits were obtained from two farms and dipped in 0, 50, 150 and 250 mg L-1 solutions of K2SiO3 for 30 min and afterward, fruit were air dried and waxed. Thereafter, fruits were ...

  11. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V

    2013-01-01

    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  12. Photovoltaics: sunshine and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stirzaker, Mike

    2006-05-15

    Spain's photovoltaic sector grew rapidly in 2004 only to slow down in 2005. While a State-guaranteed feed-in tariff is in place to drive a take-off, some of the smaller administrative cogs are buckling under the pressure. Projects are being further slowed by soaring world silicon prices and module shortages. Nevertheless, market volume is higher than ever before, and bio capital from both home and abroad is betting that the Spanish take-off is around the corner. (Author)

  13. Annual report 1973

    International Nuclear Information System (INIS)

    1973-01-01

    The GKSS scientific annual report summarizes the problems and results of the research and development projects of 1973. In contrast to earlier annual reports, a comprehensive description of the research facilities is not included. The annual report was extended by the paragraph 'Financial Report 1973' in the chapter 'Development of Geesthacht Research Centre'. The financial report gives a survey of the financial transactions and the major operations of the year under review. (orig./AK) [de

  14. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    2013-06-09

    Jun 9, 2013 ... Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

  15. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  16. Radiation hard cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

    2002-01-01

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

  17. Recent developments in silicon calorimetry

    International Nuclear Information System (INIS)

    Brau, J.E.

    1990-11-01

    We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC

  18. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  19. Flowmeter with silicon flow tube

    NARCIS (Netherlands)

    Lammerink, Theodorus S.J.; Dijkstra, Marcel; Haneveld, J.; Lötters, Joost Conrad

    2009-01-01

    A flowmeter comprising a system chip with a silicon substrate provided on a carrier, in an opening whereof at least one silicon flow tube is provided for transporting a medium whose flow rate is to be measured, said tube having two ends that issue via a wall of the opening into channels coated with

  20. Luneburg lens in silicon photonics.

    Science.gov (United States)

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  1. NUKEM annual report 1981

    International Nuclear Information System (INIS)

    The annual report of this important undertaking in the German nuclear industry informs about its structure, holdings and activities in 1981. The report of the management is followed by remarks on the annual statement of accounts (annual balance, profit-loss accounting) and the report of the Supervisory Board. In the annex the annual balance of NUKEM GmbH/HOBEG mbH as per December 31, 1981, and the profit-loss accounting of NUKEM GmbH/HOBEG mbH for the business year 1981 are presented. (UA) [de

  2. Annual Statistical Supplement, 2002

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2002 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  3. Annual Statistical Supplement, 2010

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2010 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  4. Annual Statistical Supplement, 2007

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2007 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  5. Annual Statistical Supplement, 2001

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2001 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  6. Annual Statistical Supplement, 2016

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2016 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  7. Annual Statistical Supplement, 2011

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2011 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  8. Annual Statistical Supplement, 2005

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2005 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  9. Annual Statistical Supplement, 2015

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2015 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  10. Annual Statistical Supplement, 2003

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2003 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  11. Annual Statistical Supplement, 2017

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2017 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  12. Annual Statistical Supplement, 2008

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2008 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  13. Annual Statistical Supplement, 2014

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2014 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  14. Annual Statistical Supplement, 2004

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2004 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  15. Annual Statistical Supplement, 2000

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2000 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  16. Annual Statistical Supplement, 2009

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2009 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  17. Annual Statistical Supplement, 2006

    Data.gov (United States)

    Social Security Administration — The Annual Statistical Supplement, 2006 includes the most comprehensive data available on the Social Security and Supplemental Security Income programs. More than...

  18. Suppression of Mg propagation into subsequent layers grown by MOCVD

    Science.gov (United States)

    Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

    2017-01-01

    Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

  19. Siloxanes in silicone products intended for food contact

    DEFF Research Database (Denmark)

    Cederberg, Tommy Licht; Jensen, Lisbeth Krüger

    oligomers which might migrate to the food when the product is being used. DTU has proposed two action limits for low molecular weight siloxanes in food contact materials. For the sum of cyclic siloxanes D3 to D8 the limits are 12 mg/kg food for adults and 2 mg/kg food for children. For the sum of cyclic...... siloxanes D3 to D13 and linear siloxanes L3-L13 the limit is 60 mg/kg food. In 49 samples of silicone products intended for food contact from the Norwegian markets content of siloxanes has been measured. Coated paper for baking constituted 8 of the samples and in none of those samples siloxanes were found......Silicone is used in food contact materials due to its excellent physical and chemical properties. It is thermostable and flexible and is used in bakeware and kitchen utensils. Silicone is also used to coat paper to make it water and fat resistant. There is no specific regulation in EU which covers...

  20. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  1. Determination of aluminium, silicon and magnesium content in water samples by nuclear physical methods using XRFA and the MT-25 microtron

    International Nuclear Information System (INIS)

    Maslov, O.D.; Gustova, M.V.; Belov, A.G.; Drobina, T.P.

    2011-01-01

    Some of element contents in the samples have been determined by nuclear physical methods (XRFA, GAA and NAA). The possibility of determining Al, Si and Mg content in water samples has been studied. The detection limits of 0.03 mg/1 for Al, 0.3 mg/1 for Si and 0.1 mg/1 for Mg in water samples have been obtained. Monitoring of the aluminium and silicon content in water is important because the high concentration of aluminium or the low content of silicon in drinking water may be risk factors for Alzheimer's disease

  2. Chalcogen donnors in silicon

    International Nuclear Information System (INIS)

    Scolfaro, L.M.R.

    1985-01-01

    The electronic stucture of chalcogen impurities in silicon which give rise to deep levels in the forbidden band gap of that semiconductor is studied. The molecular cluster model within the formalism of the multiple scattering method in the Xα local density approximation was used . The surface orbitals were treated by using the Watson sphere model. Studies were carried out for the isolated substitutional sulfur and selenium impurities (Si:S and Si:Se). A pioneer investigation was performed for the nearest-neighbor impurity pairs of sulfur and selenium (Si:S 2 and Si:Se 2 ). All the systems were also analysed in the positive charge states (Si:S + , Si:Se + and Si:Se 2 + ) and for the isolated impurities the calculations were carried out to the spin polarized limit. The obtained results were used to interpret recent photoconductivity, photocapitance, EPR and DLTS data on these centers. It was observed that the adopted model is able to provide a satisfactory description of the electronic structure of the chalcogen impurity centers in silicon. (autor) [pt

  3. Flexible silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blakers, A.W.; Armour, T. [Centre for Sustainable Energy Systems, The Australian National University, Canberra ACT 0200 (Australia)

    2009-08-15

    In order to be useful for certain niche applications, crystalline silicon solar cells must be able to sustain either one-time flexure or multiple non-critical flexures without significant loss of strength or efficiency. This paper describes experimental characterisation of the behaviour of thin crystalline silicon solar cells, under either static or repeated flexure, by flexing samples and recording any resulting changes in performance. Thin SLIVER cells were used for the experiment. Mechanical strength was found to be unaffected after 100,000 flexures. Solar conversion efficiency remained at greater than 95% of the initial value after 100,000 flexures. Prolonged one-time flexure close to, but not below, the fracture radius resulted in no significant change of properties. For every sample, fracture occurred either on the first flexure to a given radius of curvature, or not at all when using that radius. In summary, for a given radius of curvature, either the flexed solar cells broke immediately, or they were essentially unaffected by prolonged or multiple flexing. (author)

  4. ATLAS Silicon Microstrip Tracker

    CERN Document Server

    Haefner, Petra; The ATLAS collaboration

    2010-01-01

    The SemiConductor Tracker (SCT), made up from silicon micro-strip detectors is the key precision tracking device in ATLAS, one of the experiments at CERN LHC. The completed SCT is in very good shape: 99.3% of the SCT strips are operational, noise occupancy and hit efficiency exceed the design specifications. In the talk the current status of the SCT will be reviewed. We will report on the operation of the detector and observed problems, with stress on the sensor and electronics performance. TWEPP Summary In December 2009 the ATLAS experiment at the CERN Large Hadron Collider (LHC) recorded the first proton- proton collisions at a centre-of-mass energy of 900 GeV and this was followed by the unprecedented energy of 7 TeV in March 2010. The SemiConductor Tracker (SCT) is the key precision tracking device in ATLAS, made up from silicon micro-strip detectors processed in the planar p-in-n technology. The signal from the strips is processed in the front-end ASICS ABCD3TA, working in the binary readout mode. Data i...

  5. The Influence of Aluminum on the Microstructure and Hardness of Mg-5Si-7Sn Alloy

    Directory of Open Access Journals (Sweden)

    Rzychoń T.

    2016-03-01

    Full Text Available Magnesium alloys due the low density and good mechanical properties are mainly used in the automotive and aerospace industry. In recent years, magnesium alloys are extensively developed for use in high temperatures (above 120°C. Among these alloys, magnesium alloys containing tin and silicon have large possibilities of application due to the formation of thermally stable intermetallic Mg2Sn and Mg2Si. In this paper the influence of aluminum and heat treatment on the on the microstructure and hardness of Mg-7Sn-5Si alloy is reported. It was found that the microstructure of Mg-7Sn-5Si alloy consist of α-Mg solid solution, Mg2Sn and Mg2Si compounds. Addition of 2 wt% of Al to Mg-7Sn-5Si alloy causes the formation of Al2Sn phase. Moreover, Al dissolves in the α-Mg solid solution. The solution heat-treatment of tested alloys at 500°C for 24 h causes the dissolve the Mg2Sn phase in the α-Mg matrix and spheroidization of Mg2Si compound. The Mg2Si primary crystals are stable at solution temperature. After ageing treatment the precipitation process of equilibrium Mg2Sn phase was found in both alloys. The addition of aluminum has a positive effect on the hardness of Mg-7Sn-5Si alloy. In case of Mg-5Si-7Sn-2Al alloy the highest hardness was obtained for sample aged for 148 h at 250°C (88 HV2, while in case of Al-free alloy the highest hardness is 70 HV for material aged for 148 h at 250°C.

  6. Development of Solar Grade (SoG) Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Joyce, David B; Schmid, Frederick

    2008-01-18

    The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

  7. CSIR Annual report 1965

    CSIR Research Space (South Africa)

    CSIR

    1965-01-01

    Full Text Available stream_source_info Annual Report_ 1965.pdf.txt stream_content_type text/plain stream_size 48 Content-Encoding ISO-8859-1 stream_name Annual Report_ 1965.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  8. CSIR Annual report 1992

    CSIR Research Space (South Africa)

    CSIR

    1992-01-01

    Full Text Available stream_source_info Annual Report_ 1992.pdf.txt stream_content_type text/plain stream_size 39 Content-Encoding ISO-8859-1 stream_name Annual Report_ 1992.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  9. CSIR Annual report 1979

    CSIR Research Space (South Africa)

    CSIR

    1979-01-01

    Full Text Available stream_source_info CSIR Annual report_1979.pdf.txt stream_content_type text/plain stream_size 86 Content-Encoding ISO-8859-1 stream_name CSIR Annual report_1979.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  10. CSIR Annual report 1976

    CSIR Research Space (South Africa)

    CSIR

    1976-01-01

    Full Text Available stream_source_info Annual Report_1976.pdf.txt stream_content_type text/plain stream_size 75 Content-Encoding ISO-8859-1 stream_name Annual Report_1976.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  11. CSIR Annual report 1978

    CSIR Research Space (South Africa)

    CSIR

    1978-01-01

    Full Text Available stream_source_info Annual Report_1978.pdf.txt stream_content_type text/plain stream_size 78 Content-Encoding ISO-8859-1 stream_name Annual Report_1978.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  12. CSIR Annual report 1991

    CSIR Research Space (South Africa)

    CSIR

    1991-01-01

    Full Text Available stream_source_info Annual Report_ 1991.pdf.txt stream_content_type text/plain stream_size 40 Content-Encoding ISO-8859-1 stream_name Annual Report_ 1991.pdf.txt Content-Type text/plain; charset=ISO-8859-1 ...

  13. Annual Partnership Report, 2016

    Science.gov (United States)

    Wyoming Community College Commission, 2016

    2016-01-01

    The "Annual Partnership Report" catalogs partnerships that Wyoming community colleges established and maintained for each fiscal year. This partnership report fulfills statutory reporting requirement W.S. 21-18-202(e)(iv) which mandates the development of annual reports to the legislature on the outcomes of partnerships between colleges…

  14. Annual Report 1997

    Energy Technology Data Exchange (ETDEWEB)

    Golnik, N.; Mika, J.R.; Wieteska, K. [eds.

    1998-12-31

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 1997. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  15. Annual Energy Review, 2008

    Energy Technology Data Exchange (ETDEWEB)

    None

    2009-06-01

    The Annual Energy Review (AER) is the Energy Information Administration's (EIA) primary report of annual historical energy statistics. For many series, data begin with the year 1949. Included are statistics on total energy production, consumption, trade, and energy prices; overviews of petroleum, natural gas, coal, electricity, nuclear energy, renewable energy, and international energy; financial and environment indicators; and data unit conversions.

  16. Natural gas annual 1991

    International Nuclear Information System (INIS)

    1993-01-01

    The Natural Gas Annual 1991 provides information on the supply and disposition of natural gas to a wide audience including industry, consumers Federal and State agencies, and education institutions. This report, the Natural Gas Annual 1991 Supplement: Company Profiles, presents a detailed profile of selected companies

  17. Annual Report 2001

    International Nuclear Information System (INIS)

    Swiboda, G.

    2002-01-01

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 2001. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  18. Annual report to Congress

    International Nuclear Information System (INIS)

    1987-01-01

    This is the ninth Annual Report to Congress of the United States Department of Energy. It covers the activities of all elements of the Department except the independent Federal Regulatory Commission, which issues its own annual report. 88 refs., 43 tabs

  19. Annual Report 1997

    International Nuclear Information System (INIS)

    Golnik, N.; Mika, J.R.; Wieteska, K.

    1998-01-01

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 1997. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  20. Annual Report 1997

    Energy Technology Data Exchange (ETDEWEB)

    Golnik, N; Mika, J R; Wieteska, K [eds.

    1999-12-31

    This Annual Report of the Institute of Atomic Energy describes the results of the research works carried out at the Institute at 1997. As in the preceding years the authors of the individual scientific reports published in this Annual Report are fully responsible for their content and layout. The Report contains the information on other activities of the Institute as well. (author)

  1. Relationship between silicon concentration and creatinine clearance

    International Nuclear Information System (INIS)

    Miura, Y.; Nakai, K.; Itoh, C.; Horikiri, J.; Sera, K.; Sato, M.

    1998-01-01

    Silicon levels in dialysis patients are markedly increasing. Using PIXE we determined the relationship between silicon concentration and creatinine clearance in 30 samples. Urine silicon concentration were significantly correlated to creatinine clearance (p<0.001). And also serum silicon concentration were significantly correlated to creatinine clearance (p<0.0001). (author)

  2. Luminescence of porous silicon doped by erbium

    International Nuclear Information System (INIS)

    Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

    1996-01-01

    The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

  3. Apparatus for making molten silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1988-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  4. Towards solar grade silicon: Challenges and benefits for low cost photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Pizzini, Sergio [Ned Silicon Spa, Via Th. Edison 6, 60027 Osimo (Ancona) (Italy)

    2010-09-15

    It is well known that silicon in its various structural configurations (single crystal, multicrystalline, amorphous, micro-nanocrystalline) supplies almost 90% of the substrates used in the photovoltaic industry. It is also known, since years, that the photovoltaic (PV) industry shows a marked growth trend, which demanded and demands a continuous, huge increase of the bulk silicon supply in the order of 30%/yr. In order to fulfill their today- and future needs, many companies worldwide took the decision to start the installation of many thousand tons/year plants, most of them using the Siemens process, some of them using the MG route, to produce the so called solar grade (SG) silicon. The advantages of the Siemens process are well known, as it provides ultrapure silicon, directly usable for growing either single crystalline Czochralski ingots or multicrystalline ingots using the directional solidification (DS) technique. The disadvantages are its high energetic cost (a minimum of 120 kWH/kg) and the possible losses of chlorinated gases in the atmosphere, with possible severe environmental problems. The advantages of the MG route are still potential, as there is no commercially available production of solar silicon as yet, and rely on its reduced energetic costs (a maximum of 25-30 kWh/kg) for a feedstock directly usable for growing multicrystalline ingots using the DS technique. The drawbacks of silicon of MG origin are its larger concentration of metallic impurities, as compared with the Siemens one, the higher B and P content, and the potentially high carbon content. The aim of this paper is to deal with some of the problems encountered so far with the silicon of MG origin with respect to the metallic and non-metallic impurities content, as well as to propose technologically feasible solar grade feedstock specifications. (author)

  5. The Rechargeability of Silicon-Air Batteries

    Science.gov (United States)

    2012-06-01

    an Si-air electrochemical cell a source of water for other applications. Metal-air batteries, silicon-air, electrochemistry , rechargeable batteries UU...be based on constant amount of water in the IL.  The electrochemistry has to be based on more robust reference electrode. Some use of ferrocence...MgO  -569.4  -601.7  3942  6859  Zn  Zn + 1/2O2 ZnO   -320.8  -350.7  1363  9677  Si  Si + O2 SiO2  -856.5  -910.9  8470  21090  7 electrode. RTIL

  6. Comparison of specific production performances by two crystalline silicon PV systems

    Directory of Open Access Journals (Sweden)

    Martin Fajman

    2013-01-01

    Full Text Available A comparison of two independent photovoltaic (PV systems located close to each other on the south of the Czech Moravian Highland was accomplished. Due to differences in installation parameters; reference quantities were used to calculate transformed data sets for specific production performances comparison. Differences in monthly and annually daily production were performed by t-test.According to obtained results, it was concluded that annually mean daily productions per 1 kWp of installed capacity and per 1 m2 of active area of the panels are significantly better by single crystal silicon installation in tracking system than by stable installation of a different technology of single crystal silicon. However, comparing this performance per 1 m2 of occupied land by studied power-plants the stable installation performed higher production rates on daily mean basis in majority of months of the year 2010 as well as by annually mean daily production.

  7. Silicon Telescope Detectors

    CERN Document Server

    Gurov, Yu B; Sandukovsky, V G; Yurkovski, J

    2005-01-01

    The results of research and development of special silicon detectors with a large active area ($> 8 cm^{2}$) for multilayer telescope spectrometers (fulfilled in the Laboratory of Nuclear Problems, JINR) are reviewed. The detector parameters are listed. The production of totally depleted surface barrier detectors (identifiers) operating under bias voltage two to three times higher than depletion voltage is described. The possibility of fabrication of lithium drifted counters with a very thin entrance window on the diffusion side of the detector (about 10--20 $\\mu$m) is shown. The detector fabrication technique has allowed minimizing detector dead regions without degradation of their spectroscopic characteristics and reliability during long time operation in charge particle beams.

  8. Silicon radiation detector

    International Nuclear Information System (INIS)

    Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

    1992-01-01

    The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

  9. Zirconates heteroepitaxy on silicon

    Science.gov (United States)

    Fompeyrine, Jean; Seo, Jin Won; Seigwart, Heinz; Rossel, Christophe; Locquet, Jean-Pierre

    2002-03-01

    In the coming years, agressive scaling in CMOS technology will probably trigger the transition to more advanced materials, for example alternate gate dielectrics. Epitaxial thin films are attractive candidates, as long as the difficult chemical and structural issues can be solved, and superior properties can be obtained. Since very few binary oxides can match the electrical, physical and structural requirements which are needed, a combination of those binaries are used here to investigate other lattice matched oxides. We will report on the growth of crystalline zirconium oxide thin films stabilized with different cationic substitutions. All films have been grown in an oxide-MBE system by direct evaporation of the elements on silicon substrates and exposure to molecular or atomic oxygen. The conditions required to obtain epitaxial thin films will be discussed, and successful examples will be presented.

  10. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate......, a mutant in Si influx transporter BdLsi1 was identified. BdLsi1 belongs to the major intrinsic protein family. The mutant BdLsi1 protein had an amino acid change from proline to serine in the highly conserved NPA motif. The mutation caused a defect in channeling of Si as well as other substrates...... such as germanium and arsenite. The Si concentration in the mutant plant was significantly reduced by more than 80 %. Rice mutants defective in Si transporters OsLsi1 and OsLsi2 also showed significantly lower straw Si concentration. It is concluded that the quality of straw biomass for bioenergy purposes can...

  11. Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

    Science.gov (United States)

    Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

    2018-03-01

    Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

  12. Muonium states in silicon carbide

    International Nuclear Information System (INIS)

    Patterson, B.D.; Baumeler, H.; Keller, H.; Kiefl, R.F.; Kuendig, W.; Odermatt, W.; Schneider, J.W.; Estle, T.L.; Spencer, D.P.; Savic, I.M.

    1986-01-01

    Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ + e - ). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a signal crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu * state in diamond and silicon. (orig.)

  13. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  14. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  15. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  16. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  17. Radiation resistant passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Swanson, R.M.; Gan, J.Y.; Gruenbaum, P.E.

    1991-01-01

    This patent describes a silicon solar cell having improved stability when exposed to concentrated solar radiation. It comprises a body of silicon material having a major surface for receiving radiation, a plurality of p and n conductivity regions in the body for collecting electrons and holes created by impinging radiation, and a passivation layer on the major surface including a first layer of silicon oxide in contact with the body and a polycrystalline silicon layer on the first layer of silicon oxide

  18. Exploring the island of inversion with the d({sup 30}Mg,p){sup 31}Mg reaction

    Energy Technology Data Exchange (ETDEWEB)

    Bildstein, Vinzenz

    2010-12-07

    In this thesis the results of a d({sup 30}Mg,p){sup 31}Mg experiment at REX-ISOLDE are presented. {sup 31}Mg is located directly on the border of the so-called ''Island of Inversion'', a region of the nuclear chart around {sup 32}Mg where deformed intruder states of the fp shell form the ground states of the nuclei instead of the normal spherical states of the sd shell. A recent experiment has shown the ground state of {sup 31}Mg to be a 1/2{sup +} state and indicates more than 90% intruder configuration. The question whether the low-lying excited states of {sup 31}Mg are deformed intruder states as well or rather spherical states from the sd shell, indicating shape coexistence, is still open. The d({sup 30}Mg,p) {sup 31}Mg reaction is thus a good tool to gain more insight into the nature of the Island of Inversion. In the framework of this thesis the angular distribution of protons was measured for the second excited state at 221 keV in coincidence with de-excitation {gamma}-rays. The angular distribution was compared to DWBA calculations for different transferred orbital momenta, identifying the state for the first time as an l=1 state. The experiment was performed with the new charged particle detector setup T-REX. The setup is optimized for transfer reactions with radioactive beams in inverse kinematics. T-REX was developed, built, installed, and used for this first one neutron transfer experiment in the context of this thesis. The T-REX setup consists of {delta}E-E{sub Rest} telescopes made out of position sensitive silicon detectors that cover almost 4{pi} of the solid angle and can be combined with the MINIBALL {gamma}-ray detector array. It has a large solid angle for the detection and identification of the light recoils from transfer reactions. T-REX allows in combination with the MINIBALL Germanium detector array the tagging of the excited states by their characteristic {gamma}-rays. The combination of T-REX and MINIBALL achieves an

  19. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    2015-01-01

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  20. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  1. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  2. Vibrational modes of porous silicon

    International Nuclear Information System (INIS)

    Sabra, M.; Naddaf, M.

    2012-01-01

    On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

  3. Silicon pressure transducers: a review

    International Nuclear Information System (INIS)

    Aceves M, M.; Sandoval I, F.

    1994-01-01

    We present a review of the pressure sensors, which use the silicon piezo resistive effect and micro machining technique. Typical pressure sensors, applications, design and other different structures are presented. (Author)

  4. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  5. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.

    2004-08-01

    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  6. Method of forming buried oxide layers in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  7. Aligned three-dimensional prismlike magnesium nanostructures realized onto silicon substrate

    International Nuclear Information System (INIS)

    Zhang Kaili; Rossi, Carole; Tenailleau, Christophe; Alphonse, Pierre

    2008-01-01

    A simple approach is proposed to realize three-dimensional (3D) prismlike Mg nanostructures, which has several advantages over previous investigations such as suitable for mass production, reduced impurities, tailored dimensions, and easier integration into microsystem. 3D Mg nanostructures are realized onto silicon substrate using a conventional thermal evaporator, where the incident angle of Mg vapor flux with respect to the substrate surface normal is fixed at 88 deg. The as-prepared 3D Mg nanostructures are characterized by scanning electron microscopy, x-ray diffraction, energy dispersive x-ray analysis, transmission electron microscopy, high-resolution transmission electron microscopy, and surface area measurement

  8. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  9. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    Temelkuran, B.; Bayindir, Mehmet; Ozbay, E.; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.

    2001-01-01

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  10. Industrial Silicon Wafer Solar Cells

    OpenAIRE

    Neuhaus, Dirk-Holger; Münzer, Adolf

    2007-01-01

    In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future e...

  11. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  12. Laser tests of silicon detectors

    International Nuclear Information System (INIS)

    Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

    2007-01-01

    This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

  13. Porous silicon nanoparticle as a stabilizing support for chondroitinase.

    Science.gov (United States)

    Daneshjou, Sara; Dabirmanesh, Bahareh; Rahimi, Fereshteh; Khajeh, Khosro

    2017-01-01

    Chondroitinase ABCI (cABCI) from Proteus vulgaris is a drug enzyme that can be used to treat spinal cord injuries. One of the main problems of chondroitinase ABC1 is its low thermal stability. The objective of the current study was to stabilize the enzyme through entrapment within porous silicon (pSi) nanoparticles. pSi was prepared by an electrochemical etch of p-type silicon using hydrofluoric acid/ethanol. The size of nanoparticles were determined 180nm by dynamic light scattering and the mean pore diameter was in the range of 40-60nm obtained by scanning electron microscopy. Enzymes were immobilized on porouse silicon nanoparticles by entrapment. The capacity of matrix was 35μg enzyme per 1mg of silicon. The immobilized enzyme displayed lower V max values compared to the free enzyme, but Km values were the same for both enzymes. Immobilization significantly increased the enzyme stability at various temperatures (-20, 4, 25 and 37°C). For example, at 4°C, the free enzyme (in 10mM imidazole) retained 20% of its activity after 100min, while the immobilized one retained 50% of its initial activity. Nanoparticles loading capacity and the enzyme release rate showed that the selected particles could be a pharmaceutically acceptable carrier for chondroitinase. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. Silicon fertilization and soil water tensions on rice development and yield

    Directory of Open Access Journals (Sweden)

    Jakeline R. de Oliveira

    2016-02-01

    Full Text Available ABSTRACT The cultivation of upland rice (Oryza sativa in Brazil occurs mainly in the Cerrado, a region with adverse weather conditions. The use of silicon in its cultivation becomes important, since this nutrient provides higher rigidity, lower transpiration and higher resistance to dry spells in rice plants. The objective of the present study was to evaluate the effect of silicon fertilization and soil water tensions on upland rice development and yield in a Cerrado Oxisol. A 5 x 5 fractionated factorial with five soil water tensions (0, 15, 30, 45 and 60 kPa and five silicon doses (0, 120, 240, 480 and 960 mg dm-3 was used, which were distributed in a randomized block design, with four replicates. Plant height, number of tillers, number of panicles, number of grains per panicle, numbers of full and empty grains and percentage of empty grains were evaluated. Silicon fertilization promotes increased tillering in rice plants at the dose of 960 mg dm-3. The numbers of tillers and panicles decreased with the application of silicon up to the doses of 460 and 490 mg dm-3, respectively. The increase in soil water tensions reduced plant height and the number of full grains, and increased the percentage of empty grains of upland rice.

  15. Combined Effects of Phytoestrogen Genistein and Silicon on Ovariectomy-Induced Bone Loss in Rat.

    Science.gov (United States)

    Qi, Shanshan; Zheng, Hongxing

    2017-06-01

    This study was performed to evaluate the effect of concomitant supplementation of genistein and silicon on bone mineral density and bone metabolism-related markers in ovariectomized rat. Three-month-old Sprague Dawley female rats were subjected to bilateral ovariectomy (OVX) or sham surgery, and then the OVX rats were randomly divided into four groups: OVX-GEN, OVX-Si, OVX-GEN-Si, and OVX. Genistein and silicon supplementation was started immediately after OVX and continued for 10 weeks. In the OVX-GEN group, 5 mg genistein per gram body weight was injected subcutaneously. The OVX-Si group was given soluble silicon daily in demineralized water (Si 20 mg/kg body weight/day). The OVX-GEN-Si group was given subcutaneous injections of 5 mg genistein per gram body weight, at the same time, given soluble silicon daily (Si 20 mg/kg body weight/day). The results showed that the genistein supplementation in the OVX rats significantly prevented the loss of uterus weight; however, the silicon supplementation showed no effect on the uterus weight loss. The lumbar spine and femur bone mineral density was significantly decreased after OVX surgery; however, this decrease was inhibited by the genistein and/or silicon, and the BMD of the lumbar spine and femur was the highest in the OVX-GEN-Si-treated group. Histomorphometric analyses showed that the supplementation of genistein and/or silicon restored bone volume and trabecular thickness of femoral trabecular bone in the OVX group. Besides, the treatment with genistein and silicon for 10 weeks increased the serum levels of calcium and phosphorus in the OVX rats; serum calcium and serum phosphorus in the OVX-GEN-Si group were higher than those in the OVX-GEN and OVX-Si group (P silicon decreased serum alkaline phosphatase (ALP) and osteocalcin, which were increased by ovariectomy; serum ALP and osteocalcin in the OVX-GEN-Si group were lower than those in the OVX-GEN and OVX-Si groups (P silicon have synergistic effects on

  16. NIRE annual report 1999

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-07-01

    The National Institute for Resources and Environment (NIRE) has a R & D concept of 'ecotechnology' that aims to protect the environment from degradation whilst promoting sustainable development. This annual report presents summaries of 32 recent research efforts.

  17. ASIST 2002 annual meeting

    CERN Multimedia

    Peek, R

    2003-01-01

    Review of discussions and presentations at the American Society for Information Science and Technology 2002 annual meeting. Topics covered included new models of scholarly publishing and the development of the semantic web (1 page).

  18. SIS - Annual Catch Limit

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Annual Catch Limit (ACL) dataset within the Species Information System (SIS) contains information and data related to management reference points and catch data.

  19. IKO Annual Report 1976

    International Nuclear Information System (INIS)

    1977-01-01

    The IKO Annual Report of 1976 relates their progress in different projects and project fields. The fields covered include electron scattering, pion and muon physics, theory, radio- and nuclear chemistry, technical department, MEA, nuclear reactions and nuclear spectroscopy

  20. Annual Adjustment Factors

    Data.gov (United States)

    Department of Housing and Urban Development — The Department of Housing and Urban Development establishes the rent adjustment factors - called Annual Adjustment Factors (AAFs) - on the basis of Consumer Price...

  1. 2002 Annual report: synthesis

    International Nuclear Information System (INIS)

    2003-01-01

    This synthesis of the Annual Report 2002 presents information of the main activities on the scope of the radiation protection and nuclear safety of the Nuclear Regulatory Authority (ARN) of the Argentina during 2002

  2. Annual report 1980

    International Nuclear Information System (INIS)

    1981-01-01

    This annual report contains a description of the named institute, the research programm, reports from the scientific establishments, a description of different cooperations, and a list of scientific publications. (HSI) [de

  3. Annual Report 1974

    International Nuclear Information System (INIS)

    1975-01-01

    This annual report supersedes the work done in the nuclear physics institute at Lyon. The studied matters are the following: nuclear theory, nuclear reactions, nuclear spectroscopy and nuclear chemistry [fr

  4. 2010 Annual Report

    Energy Technology Data Exchange (ETDEWEB)

    None

    2010-01-01

    This annual report includes: an overview of Western; approaches for future hydropower and transmission service; major achievements in FY 2010; FY 2010 customer Integrated Resource Planning, or IRP, survey; and financial data.

  5. Annual report 1990

    International Nuclear Information System (INIS)

    Gaeggeler, H.W.; Lorenzen, R.

    1991-04-01

    This annual report of the chemistry laboratory gives an overview of research performed during 1990 in the field of geochemistry, trace analysis, aerosol chemistry, heavy elements, cement chemistry and analytical chemistry. figs., tabs., refs

  6. Scientific annual report 1980

    International Nuclear Information System (INIS)

    1981-01-01

    This annual report contains a collection of the abstracts of the publications concerning research and development in the named institute together with a bibliography about further publications, contributions to conferences and speeches. (HSI) [de

  7. Annual report - LNLS - 1990

    International Nuclear Information System (INIS)

    1990-01-01

    This is the 1990 Annual Report of the LNLS, the upcoming Brazilian Synchrotron Light Source. It discusses its projects, organization as well as the proposed experimental stations. It presents also a list of publications. (A.C.A.S.)

  8. Annual report 2005

    International Nuclear Information System (INIS)

    Toncik, M.

    2006-04-01

    In this Annual report the operating of the Slovak Environmental Agency in 2005 is reported. The structure of the Agency, mission, personnel structure, financing, monitoring of the environment, international cooperation and coordination of research programmes are reviewed

  9. Annual report 2002

    International Nuclear Information System (INIS)

    Toncik, M.

    2003-04-01

    In this Annual report the operating of the Slovak Environmental Agency in 2002 is reported. Structure of the Agency, mission, personnel structure, financing, monitoring of the environment, international cooperation and coordination of research programmes are reviewed

  10. Annual report 2004

    International Nuclear Information System (INIS)

    Toncik, M.

    2005-04-01

    In this Annual report the operating of the Slovak Environmental Agency in 2004 is reported. The structure of the Agency, mission, personnel structure, financing, monitoring of the environment, international cooperation and coordination of research programmes are reviewed

  11. Annual report 2003

    International Nuclear Information System (INIS)

    Toncik, M.

    2004-04-01

    In this Annual report the operating of the Slovak Environmental Agency in 2003 is reported. The structure of the Agency, mission, personnel structure, financing, monitoring of the environment, international cooperation and coordination of research programmes are reviewed

  12. Annual report 2006

    International Nuclear Information System (INIS)

    Anon

    2007-04-01

    In this Annual report the operating of the Slovak Environmental Agency in 2006 is reported. The structure of the Agency, mission, personnel structure, financing, monitoring of the environment, international cooperation and coordination of research programmes are reviewed

  13. Annual Report 1978

    International Nuclear Information System (INIS)

    1979-01-01

    The annual report gives the specific scientific results in the fields of nuclear and radiation physics, radiation chemistry, radiochemistry and data processing with a list of publications. (orig.) [de

  14. 2000 Annual report: synthesis

    International Nuclear Information System (INIS)

    2001-01-01

    This synthesis of the Annual Report 2000 present information of the main activities on the scope of the radiation protection and nuclear safety of the Nuclear Regulatory Authority (NRA) of the Argentina during 2000

  15. 2001 Annual report: synthesis

    International Nuclear Information System (INIS)

    2001-01-01

    This synthesis of the Annual Report 2001 presents information of the main activities on the scope of the radiation protection and nuclear safety of the Nuclear Regulatory Authority (ARN) of the Argentina during 2001

  16. Dietary Silicon Intake of Korean Young Adult Males and Its Relation to their Bone Status.

    Science.gov (United States)

    Choi, Mi-Kyeong; Kim, Mi-Hyun

    2017-03-01

    Accumulated data suggests a positive effect of silicon on bone health; however, limited research exists on the silicon content of foods. To further the understanding of the relationship between dietary silicon intake and bone health, a food composition database of commonly consumed foods in Korea is required. For quantitative data on the intake levels of silicon, we analyzed the silicon content of 365 food items commonly consumed in Korea using inductively coupled plasma-atomic emission spectrometry following microwave-assisted digestion. To investigate the dietary silicon intake status and to examine the potential role of dietary silicon intake in the bone status of men, a total of 400 healthy Korean adult males aged 19-25 were observed for their diet intake and calcaneus bone density using the 24-h recall method and quantitative ultrasound, respectively. Clinical markers reflecting bone metabolism such as serum total alkaline phosphatase, N-mid osteocalcin, and type 1 collagen C-terminal telopeptide concentrations were also analyzed. Silicon intake of the subjects was estimated as 37.5 ± 22.2 mg/day. Major food sources of dietary silicon in the Korean male were cereal and cereal products (25.6 % of total silicon intake), vegetables (22.7 %), beverages and liquors (21.2 %), and milk and milk products (7.0 %). Silicon intake correlated positively with age, weight, energy intake, protein intake, calcium intake, and alcohol intake. After adjusted for age, weight, energy intake, protein intake, calcium intake, alcohol intake, smoking cigarettes, and regular exercise status, daily total silicon intake had no correlation with calcaneus bone density and the bone metabolism markers, but silicon intake from vegetables had a positive correlation with serum total alkaline phosphatase activity, a bone formation maker. These findings show the possible positive relationship between dietary silicon intake from vegetables and the bone formation of young adult males. Further

  17. Annual report 2003

    International Nuclear Information System (INIS)

    2003-01-01

    Delivering products and services to nuclear power plants operators, AREVA operates in every sector of the civilian nuclear power and fuel cycle industry. This annual report 2003 provides, in seven chapters, information on persons responsible for the annual report and for auditing the financial statements, general information on the company and share capital (statute, capital, share trading, dividends), information on company operations, changes and future prospects, assets, financial position and financial performance, corporate governance, recent developments and future prospects. (A.L.B.)

  18. Annual report June 1988

    International Nuclear Information System (INIS)

    1988-01-01

    This annual report reviews the activities of the National Accelerator Centre until June 1988. The 200 MeV cyclotron facility, the Pretoria cyclotron facility and the Van De Graaff facility are discussed in detail. Aspects of the 200 MeV cyclotron facility examined are, inter alia: the injector cyclotrons, the separated-sector cyclotron, the control system, the beam transport system and radioisotope production. Separate abstracts were prepared for the various subdivisions contained in this annual report

  19. Natural gas annual 1995

    International Nuclear Information System (INIS)

    1996-11-01

    The Natural Gas Annual provides information on the supply and disposition of natural gas to a wide audience including industry, consumers, Federal and State agencies, and educational institutions. The 1995 data are presented in a sequence that follows natural gas (including supplemental supplies) from its production to its end use. This is followed by tables summarizing natural gas supply and disposition from 1991 to 1995 for each Census Division and each State. Annual historical data are shown at the national level

  20. Natural gas annual 1993

    International Nuclear Information System (INIS)

    1994-01-01

    The Natural Gas Annual provides information on the supply and disposition of natural gas to a wide audience including industry, consumers, Federal and State agencies, and educational institutions. The 1993 data are presented in a sequence that follows natural gas (including supplemental supplies) from its production to its end use. Tables summarizing natural gas supply and disposition from 1989 to 1993 are given for each Census Division and each State. Annual historical data are shown at the national level

  1. Natural gas annual 1991

    International Nuclear Information System (INIS)

    1992-01-01

    The Natural Gas Annual provides information on the supply and disposition of natural gas to a wide audience including industry, consumers, Federal and State agencies, and educational institutions. The 1991 data are presented in a sequence that follows natural gas (including supplemental supplies) from its production to its end use. Tables summarizing natural gas supply and disposition form 1987 to 1991 are given for each Census Division and each State. Annual historical data are shown at the national level

  2. Ontario Hydro 1982 annual report

    International Nuclear Information System (INIS)

    1983-05-01

    Due to the economic recession, primary electrical energy demand for the year failed to exceed that of the previous year for the first time since 1944. Actual demand was 100.8 billion kWh, 0.8 per cent below 1981. However, annual peak demand reached 18.1 million kW on January 18, an all-time high, and 5.4 per cent over January 1981. There were 104.1 billion kWh of electricity generated during the year, nearly equally from nuclear, coal, and water power. Nuclear generating units continued their outstanding performance. Bruce-3 completed a 494-day run at continuous power. NPD Generating Station celebrated 20 years of operation. Pickering B unit 5 started up and produced its first power. At Bruce A, a remote-controlled vehicle was used to remove damaged fuel to a shielded flask, completing the job in a short time with low staff radiation exposure. Bruce B construction progressed on schedule; while at Darlington, design and construction continued at a high level, with 1700 workers on site at year-end. Actual net income was $348 million, $38 million below forecast. Coal deliveries were 13.4 million Mg (23 per cent over 1981). Nuclear fuel deliveries to generating stations were 996 Mg (3 per cent over 1981). Agreements were negotiated for the supply of 5200 Mg of uranium concentrates during 1985-93. Nuclear fuel manufacturing contracts were awarded at lower prices than previously attained. Income totalling $163 million from electricity exports to the U.S.A. reduced overall cost of providing electricity to Ontario customers by 5.1 per cent. The Residential Energy Advisory Program surveyed 16,000 homeowners wishing to improve home energy efficiency. There were 20,000 residential customers who received grants to convert from oil to electric heating. Additional consumption resulting from these conversions is estimated at 280 million kWh

  3. SIMULATED 8 MeV NEUTRON RESPONSE FUNCTIONS OF A THIN SILICON NEUTRON SENSOR.

    Science.gov (United States)

    Takada, Masashi; Matsumoto, Tetsuro; Masuda, Akihiko; Nunomiya, Tomoya; Aoyama, Kei; Nakamura, Takashi

    2017-12-22

    Neutron response functions of a thin silicon neutron sensor are simulated using PHITS2 and MCNP6 codes for an 8 MeV neutron beam at angles of incidence of 0°, 30° and 60°. The contributions of alpha particles created from the 28Si(n,α)25Mg reaction and the silicon nuclei scattered elastically by neutrons in the silicon sensor have not been well reproduced using the MCNP6 code. The 8 MeV neutron response functions simulated using the PHITS2 code with an accurate event generator mode are in good agreement with experimental results and include the contributions of the alpha particles and silicon nuclei. © The Author(s) 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  4. Optimization of Fluorescent Silicon Nano material Production Using Peroxide/ Acid/ Salt Technique

    International Nuclear Information System (INIS)

    Abuhassan, L.H.

    2009-01-01

    Silicon nano material was prepared using the peroxide/ acid/ salt technique in which an aqueous silicon-based salt solution was added to H 2 O 2 / HF etchants. In order to optimize the experimental conditions for silicon nano material production, the amount of nano material produced was studied as a function of the volume of the silicon salt solution used in the synthesis. A set of samples was prepared using: 0, 5, 10, 15, and 20 ml of an aqueous 1 mg/ L metasilicate solution. The area under the corresponding peaks in the infrared (ir) absorption spectra was used as a qualitative indicator to the amount of the nano material present. The results indicated that using 10 ml of the metasilicate solution produced the highest amount of nano material. Furthermore, the results demonstrated that the peroxide/ acid/ salt technique results in the enhancement of the production yield of silicon nano material at a reduced power demand and with a higher material to void ratio. A model in which the silicon salt forms a secondary source of silicon nano material is proposed. The auxiliary nano material is deposited into the porous network causing an increase in the amount of nano material produced and a reduction in the voids present. Thus a reduction in the resistance of the porous layer, and consequently reduction in the power required, are expected. (author)

  5. Assessment of the effect of silicon on antioxidant enzymes in cotton plants by multivariate analysis.

    Science.gov (United States)

    Alberto Moldes, Carlos; Fontão de Lima Filho, Oscar; Manuel Camiña, José; Gabriela Kiriachek, Soraya; Lia Molas, María; Mui Tsai, Siu

    2013-11-27

    Silicon has been extensively researched in relation to the response of plants to biotic and abiotic stress, as an element triggering defense mechanisms which activate the antioxidant system. Furthermore, in some species, adding silicon to unstressed plants modifies the activity of certain antioxidant enzymes participating in detoxifying processes. Thus, in this study, we analyzed the activity of antioxidant enzymes in leaves and roots of unstressed cotton plants fertilized with silicon (Si). Cotton plants were grown in hydroponic culture and added with increasing doses of potassium silicate; then, the enzymatic activity of catalase (CAT), guaiacol peroxidase (GPOX), ascorbate peroxidase (APX), and lipid peroxidation were determined. Using multivariate analysis, we found that silicon altered the activity of GPOX, APX, and CAT in roots and leaves of unstressed cotton plants, whereas lipid peroxidation was not affected. The analysis of these four variables in concert showed a clear differentiation among Si treatments. We observed that enzymatic activities in leaves and roots changed as silicon concentration increased, to stabilize at 100 and 200 mg Si L(-1) treatments in leaves and roots, respectively. Those alterations would allow a new biochemical status that could be partially responsible for the beneficial effects of silicon. This study might contribute to adjust the silicon application doses for optimal fertilization, preventing potential toxic effects and unnecessary cost.

  6. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  7. Enhanced Raman scattering in porous silicon grating.

    Science.gov (United States)

    Wang, Jiajia; Jia, Zhenhong; Lv, Changwu

    2018-03-19

    The enhancement of Raman signal on monocrystalline silicon gratings with varying groove depths and on porous silicon grating were studied for a highly sensitive surface enhanced Raman scattering (SERS) response. In the experiment conducted, porous silicon gratings were fabricated. Silver nanoparticles (Ag NPs) were then deposited on the porous silicon grating to enhance the Raman signal of the detective objects. Results show that the enhancement of Raman signal on silicon grating improved when groove depth increased. The enhanced performance of Raman signal on porous silicon grating was also further improved. The Rhodamine SERS response based on Ag NPs/ porous silicon grating substrates was enhanced relative to the SERS response on Ag NPs/ porous silicon substrates. Ag NPs / porous silicon grating SERS substrate system achieved a highly sensitive SERS response due to the coupling of various Raman enhancement factors.

  8. Annual Report: Photovoltaic Subcontract Program FY 1990

    Energy Technology Data Exchange (ETDEWEB)

    Summers, K. A. [Solar Energy Research Inst., Golden, CO (United States)

    1991-03-01

    This report summarizes the progress of the Photovoltaic (PV) Subcontract Program of the Solar Energy Research Institute (SERI) from October 1, 1989 through September 30, 1990. The PV Subcontract Program is responsible for managing the subcontracted portion of SERI's PV Advanced Research and Development Project. In fiscal year 1990, this included more than 54 subcontracts with a total annualized funding of approximately $11.9 million. Approximately two-thirds of the subcontracts were with universities at a total funding of nearly $3.3 million. The six technical sections of the report cover the main areas of the subcontract program: the Amorphous Silicon Research Project, Polycrystalline Thin Films, Crystalline Silicon Materials Research, High-Efficiency Concepts, the New Ideas Program, and the University Participation Program. Technical summaries of each of the subcontracted programs provide a discussion of approaches, major accomplishments in FY 1990, and future research directions. Another section introduces the PVMaT project and reports on its progress.

  9. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  10. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  11. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  12. Leaching of assimilable silicon species from fly ash

    International Nuclear Information System (INIS)

    Piekos, R.; Paslawska, S.

    1998-01-01

    The objective of this study was to investigate the leaching of assimilable silicon species from coal fly ash with distilled water, sea waterand synthetic sea water at various fly ash/water ratios, pHs and temperatures. At the 1 g/100 ml fly ash/water ratio, less than 1 mg Si was found in 11 of aqueous slurries over the pH range 4-8 after 2 h at ambient temperature. The leaching was most effective at pH 10.5. At the fly ash/waterratio indicated, the pH of the suspensions decreased from 10.4 to 8.4 after 5days. The pH of fly ash slurries in sea water varied only slightly over time as compared with that in distilled water. Generally, the leaching of assimilable silicon species with distilled water was more intense than that with the sea water. 27 refs., 6 figs., 3 tabs

  13. Low-energy nuclear physics with high-segmentation silicon arrays

    International Nuclear Information System (INIS)

    Betts, R.R.; Univ. of Illinois, Chicago, IL

    1994-01-01

    A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

  14. Multifunctional Graphene-Silicone Elastomer Nanocomposite, Method of Making the Same, and Uses Thereof

    Science.gov (United States)

    Pan, Shuyang (Inventor); Aksay, Ilhan A. (Inventor); Prud'Homme, Robert K. (Inventor)

    2018-01-01

    A nanocomposite composition having a silicone elastomer matrix having therein a filler loading of greater than 0.05 wt %, based on total nanocomposite weight, wherein the filler is functional graphene sheets (FGS) having a surface area of from 300 sq m/g to 2630 sq m2/g; and a method for producing the nanocomposite and uses thereof.

  15. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  16. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

  17. Preparation and Hydrogen Storage Properties of Mg-Rich Mg-Ni Ultrafine Particles

    Directory of Open Access Journals (Sweden)

    Jianxin Zou

    2012-01-01

    Full Text Available In the present work, Mg-rich Mg-Ni ultrafine powders were prepared through an arc plasma method. The phase components, microstructure, and hydrogen storage properties of the powders were carefully investigated. It is found that Mg2Ni and MgNi2 could be obtained directly from the vapor state reactions between Mg and Ni, depending on the local vapor content in the reaction chamber. A nanostructured MgH2 + Mg2NiH4 hydrogen storage composite could be generated after hydrogenation of the Mg-Ni ultrafine powders. After dehydrogenation, MgH2 and Mg2NiH4 decomposed into nanograined Mg and Mg2Ni, respectively. Thermogravimetry/differential scanning calorimetry (TG/DSC analyses showed that Mg2NiH4 phase may play a catalytic role in the dehydriding process of the hydrogenated Mg ultrafine particles.

  18. Silicon-micromachined microchannel plates

    International Nuclear Information System (INIS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ∼0.5 to ∼25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented

  19. Implantation damage in silicon devices

    International Nuclear Information System (INIS)

    Nicholas, K.H.

    1977-01-01

    Ion implantation, is an attractive technique for producing doped layers in silicon devices but the implantation process involves disruption of the lattice and defects are formed, which can degrade device properties. Methods of minimizing such damage are discussed and direct comparisons made between implantation and diffusion techniques in terms of defects in the final devices and the electrical performance of the devices. Defects are produced in the silicon lattice during implantation but they are annealed to form secondary defects even at room temperature. The annealing can be at a low temperature ( 0 C) when migration of defects in silicon in generally small, or at high temperature when they can grow well beyond the implanted region. The defect structures can be complicated by impurity atoms knocked into the silicon from surface layers by the implantation. Defects can also be produced within layers on top of the silicon and these can be very important in device fabrication. In addition to affecting the electrical properties of the final device, defects produced during fabrication may influence the chemical properties of the materials. The use of these properties to improve devices are discussed as well as the degradation they can cause. (author)

  20. Annual report 1976

    International Nuclear Information System (INIS)

    1977-01-01

    This annual report is the fifth issued in English from the Tandem Accelerator Laboratory in Uppsala since research was started in November 1970. It covers work performed during the calendar year 1976 and updates information given in earlier annual reports with regard to laboratory facilities such as computer configuration and layout of the experimental area. The descriptions of the research projects are also in general more detailed than usual and may sometime contain results obtained before 1976 in order to avoid too many references to earlier annual reports. It has, for instance, been thought of interest to make the sections on the study of beam foil excitation of atoms and on the measurements of nuclear deformations by the REPREC method quite extensive. (Auth.)

  1. Petroleum supply annual 1992

    International Nuclear Information System (INIS)

    1993-01-01

    The Petroleum Supply Annual (PSA) contains information on the supply and disposition of crude oil and petroleum products. The publication reflects data that were collected from the petroleum industry during 1992 through annual and monthly surveys. The PSA is divided into two volumes. The first volume contains four sections: Summary Statistics, Detailed Statistics, Refinery Capacity, and Oxygenate Capacity each with final annual data. This second volume contains final statistics for each month of 1992, and replaces data previously published in the Petroleum Supply Monthly (PSM). The tables in Volumes 1 and 2 are similarly numbered to facilitate comparison between them. Explanatory Notes, located at the end of this publication, present information describing data collection, sources, estimation methodology, data quality control procedures, modifications to reporting requirements and interpretation of tables. Industry terminology and product definitions are listed alphabetically in the Glossary

  2. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-01-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

  3. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  4. Effect of the pretreatment of silicone penetrant on the performance of the chromium-free chemfilm coated on AZ91D magnesium alloys

    International Nuclear Information System (INIS)

    Chang, Shiuan-Ho; Niu, Liyuan; Su, Yichang; Wang, Wenquan; Tong, Xian; Li, Guangyu

    2016-01-01

    This paper reported a new pretreatment of silicone penetrant for forming the chromium-free chemfilm (chemical conversion coating) on the surface of an AZ91D magnesium (Mg) alloy. Through applying micro current on the pretreatment solution, an uniform mask membrane was created on the surface of a Mg alloy. By using X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Dispersive Spectrometer (EDS) analyses, the chromium-free chemfilm on a Mg alloy was examined to analyze the performance during initial, middle, and final deposition periods. As a result, the pretreatment of silicone penetrant can effectively prevent the chemfilm from cracking, improve the anticorrosion ability and nucleation rate of the chromium-free chemfilm on a Mg alloy, and make the surface crystallization transform a long strip into short axis shape. - Highlights: • An AZ91D Mg alloy was pretreated by using silicone penetrant. • Surface crystallization of the chemfilm on a silicone-pretreated Mg alloy is smooth. • The pretreatment of silicone penetrant for a Mg alloy enhanced the anticorrosion ability.

  5. Effect of the pretreatment of silicone penetrant on the performance of the chromium-free chemfilm coated on AZ91D magnesium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Shiuan-Ho, E-mail: 1802186169@qq.com [College of Electronic Information and Mechatronic Engineering, Zhaoqing University, Zhaoqing Road, Duanzhou District, Zhaoqing, Guangdong, 526061 (China); Niu, Liyuan [Department of Material Engineer, Zhejiang Industry & Trade Vocational Colledge, WenZhou, 325000 (China); Su, Yichang [Department of Material Engineer, Zhejiang Industry & Trade Vocational Colledge, WenZhou, 325000 (China); College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun, 130025 (China); Wang, Wenquan [College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun, 130025 (China); Tong, Xian [Department of Material Engineer, Zhejiang Industry & Trade Vocational Colledge, WenZhou, 325000 (China); Li, Guangyu [College of Materials Science and Engineering, Jilin University, Nanling Campus, Changchun, 130025 (China)

    2016-03-01

    This paper reported a new pretreatment of silicone penetrant for forming the chromium-free chemfilm (chemical conversion coating) on the surface of an AZ91D magnesium (Mg) alloy. Through applying micro current on the pretreatment solution, an uniform mask membrane was created on the surface of a Mg alloy. By using X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Dispersive Spectrometer (EDS) analyses, the chromium-free chemfilm on a Mg alloy was examined to analyze the performance during initial, middle, and final deposition periods. As a result, the pretreatment of silicone penetrant can effectively prevent the chemfilm from cracking, improve the anticorrosion ability and nucleation rate of the chromium-free chemfilm on a Mg alloy, and make the surface crystallization transform a long strip into short axis shape. - Highlights: • An AZ91D Mg alloy was pretreated by using silicone penetrant. • Surface crystallization of the chemfilm on a silicone-pretreated Mg alloy is smooth. • The pretreatment of silicone penetrant for a Mg alloy enhanced the anticorrosion ability.

  6. Diatom-induced silicon isotopic fractionation in Antarctic sea ice

    Science.gov (United States)

    Francois, F.; Damien, C.; Jean-Louis, T.; Anthony, W.; Luc, A.

    2006-12-01

    We measured silicon-isotopic composition of dissolved silicon and biogenic silica collected by sequential melting from spring 2003 Antarctic pack ice (Australian sector). Sea ice is a key ecosystem in the Southern Ocean and its melting in spring has been often thought to have a seeding effect for the surface waters, triggering blooms in the mixed layer. This work is the first investigation of the silicon isotopes' proxy in sea ice and allows to estimate the activity of sea-ice diatoms in the different brine structures and the influence of sea- ice diatoms on the spring ice edge blooms. The relative use of the dissolved silicon pool by sea-ice diatoms is usually assessed by calculating nutrient:salinity ratios in the brines. However such an approach is biased by difficulties in evaluating the initial nutrient concentrations in the different brines structures, and by the impossibility to account for late sporadic nutrient replenishments. The silicon-isotopic composition of biogenic silica is a convenient alternative since it integrates an average Si utilization on all generations of diatoms. Measurements were performed on a MC-ICP-MS, in dry plasma mode using external Mg doping. Results are expressed as delta29Si relative to the NBS28 standard. From three sea ice cores with contrasted physico-chemical characteristics, we report significant isotopic fractionations linked to the diatoms activity, with distinct silicon biogeochemical dynamics between different brine structure. The diatoms in snow ice and in brine pockets of frazil or congelation ice have the most positive silicon-isotopic composition (+0.53 to +0.86 p.mil), indicating that they grow in a closed system and use a significant part of the small dissolved silicon pool. In the brine channels and skeletal layer, diatoms display a relatively less positive Si-isotopic composition (+0.41 to +0.70 p.mil), although it is still heavier compared to equilibrium fractionation (+0.38 p.mil). This suggests that they have

  7. Natural gas annual 1997

    International Nuclear Information System (INIS)

    1998-10-01

    The Natural Gas Annual provides information on the supply and disposition of natural gas to a wide audience including industry, consumers, Federal and State agencies, and educational institutions. The 1997 data are presented in a sequence that follows natural gas (including supplemental supplies) from its production to its end use. This is followed by tables summarizing natural gas supply and disposition from 1993 to 1997 for each Census Division and each State. Annual historical data are shown at the national level. 27 figs., 109 tabs

  8. Natural gas annual 1997

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-10-01

    The Natural Gas Annual provides information on the supply and disposition of natural gas to a wide audience including industry, consumers, Federal and State agencies, and educational institutions. The 1997 data are presented in a sequence that follows natural gas (including supplemental supplies) from its production to its end use. This is followed by tables summarizing natural gas supply and disposition from 1993 to 1997 for each Census Division and each State. Annual historical data are shown at the national level. 27 figs., 109 tabs.

  9. International energy annual 1996

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-02-01

    The International Energy Annual presents an overview of key international energy trends for production, consumption, imports, and exports of primary energy commodities in over 220 countries, dependencies, and areas of special sovereignty. Also included are population and gross domestic product data, as well as prices for crude oil and petroleum products in selected countries. Renewable energy reported in the International Energy Annual includes hydroelectric power, geothermal, solar, and wind electric power, biofuels energy for the US, and biofuels electric power for Brazil. New in the 1996 edition are estimates of carbon dioxide emissions from the consumption of petroleum and coal, and the consumption and flaring of natural gas. 72 tabs.

  10. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  11. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  12. Belle II silicon vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

    2016-09-21

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  13. The CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Bartalini, P.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Raffaelli, F.; Raso, G.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Wang, Y.; Watts, S.; Wittmer, B.

    1999-01-01

    The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with p T ≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

  14. Waveguide silicon nitride grating coupler

    Science.gov (United States)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  15. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    International Nuclear Information System (INIS)

    Timokhov, D. F.; Timokhov, F. P.

    2009-01-01

    Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

  16. Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

    International Nuclear Information System (INIS)

    Thilderkvist, A. L.

    1994-02-01

    The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

  17. Surface Effects in Segmented Silicon Sensors

    OpenAIRE

    Kopsalis, Ioannis

    2017-01-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO2 layers at the surface, thus changing the sensor properties and limiting their...

  18. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  19. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  20. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices.......We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  1. Simulation of atomistic processes during silicon oxidation

    OpenAIRE

    Bongiorno, Angelo

    2003-01-01

    Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

  2. Thermophysical spectroscopy of defect states in silicon

    International Nuclear Information System (INIS)

    Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

    1989-01-01

    The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

  3. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-01-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W p (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  4. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  5. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  6. The Effectiveness of Al-Si Coatings for Preventing Interfacial Reaction in Al - Mg Dissimilar Metal Welding

    OpenAIRE

    Wang, Yin; Al-Zubaidy, Basem; Prangnell, Philip

    2017-01-01

    The dissimilar welding of aluminum to magnesium is challenging because of the rapid formation of brittle intermetallic compounds (IMC) at the weld interface. An Al-Si coating interlayer was selected to address this problem, based on thermodynamic calculations that predicted silicon would change the reaction path to avoid formation of the normally observed binary Al-Mg IMC phases (-Al3Mg2 and -Al12Mg17). Long-term static heat treatments confirmed that a Si-rich coating will preferentially pr...

  7. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  8. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

    2010-01-01

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  9. Large volume cryogenic silicon detectors

    International Nuclear Information System (INIS)

    Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

    2009-01-01

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  10. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  11. Production of silicon carbide bodies

    International Nuclear Information System (INIS)

    Parkinson, K.

    1981-01-01

    A body consisting essentially of a coherent mixture of silicon carbide and carbon for subsequent siliconising is produced by casting a slip comprising silicon carbide and carbon powders in a porous mould. Part of the surface of the body, particularly internal features, is formed by providing within the mould a core of a material which retains its shape while casting is in progress but is compressed by shrinkage of the cast body as it dries and is thereafter removable from the cast body. Materials which are suitable for the core are expanded polystyrene and gelatinous products of selected low elastic modulus. (author)

  12. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  13. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  14. High yield silicon carbide prepolymers

    International Nuclear Information System (INIS)

    Baney, R.H.

    1982-01-01

    Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

  15. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  16. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  17. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  18. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads

    2008-01-01

    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  19. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  20. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  1. Silicon-Based Nanoscale Composite Energetic Materials

    Science.gov (United States)

    2013-02-01

    1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

  2. Process of preparing tritiated porous silicon

    Science.gov (United States)

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  3. Porous silicon: X-rays sensitivity

    International Nuclear Information System (INIS)

    Gerstenmayer, J.L.; Vibert, Patrick; Mercier, Patrick; Rayer, Claude; Hyvernage, Michel; Herino, Roland; Bsiesy, Ahmad

    1994-01-01

    We demonstrate that high porosity anodically porous silicon is radioluminescent. Interests of this study are double. Firstly: is the construction of porous silicon X-rays detectors (imagers) possible? Secondly: is it necessary to protect silicon porous based optoelectronic systems from ionising radiations effects (spatial environment)? ((orig.))

  4. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  5. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  6. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    carbide ceramics. A K MUKHOPADHYAY. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz.

  7. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  8. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

    2001-01-01

    The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  9. Alterations of Mg2+ After Hemorrhagic Shock.

    Science.gov (United States)

    Lee, Mun-Young; Yang, Dong Kwon; Kim, Shang-Jin

    2017-11-01

    Hemorrhagic shock is generally characterized by hemodynamic instability with cellular hypoxia and diminishing cellular function, resulting from an imbalance between systemic oxygen delivery and consumption and redistribution of fluid and electrolytes. Magnesium (Mg) is the fourth most abundant cation overall and second most abundant intracellular cation in the body and an essential cofactor for the energy production and cellular metabolism. Data for blood total Mg (tMg; free-ionized, protein-bound, and anion-bound forms) and free Mg 2+ levels after a traumatic injury are inconsistent and only limited information is available on hemorrhagic effects on free Mg 2+ as the physiologically active form. The aim of this study was to determine changes in blood Mg 2+ and tMg after hemorrhage in rats identifying mechanism and origin of the changes in blood Mg 2+ . Hemorrhagic shock produced significant increases in blood Mg 2+ , plasma tMg, Na + , K + , Cl - , anion gap, partial pressures of oxygen, glucose, and blood urea nitrogen but significant decreases in RBC tMg, blood Ca 2+ , HCO 3 - , pH, partial pressures of carbon dioxide, hematocrit, hemoglobin, total cholesterol, and plasma/RBC ATP. During hemorrhagic shock, K + , anion gap, and BUN showed significant positive correlations with changes in blood Mg 2+ level, while Ca 2+ , pH, and T-CHO correlated to Mg 2+ in a negative manner. In conclusion, hemorrhagic shock induced an increase in both blood-free Mg 2+ and tMg, resulted from Mg 2+ efflux from metabolic damaged cell with acidosis and ATP depletion.

  10. Trends in the use of silicone hydrogel contact lenses for daily wear.

    Science.gov (United States)

    Efron, Nathan; Morgan, Philip B

    2008-10-01

    Although the first silicone hydrogel contact lenses introduced onto the world contact lens market in 1999 held approval for both daily wear and extended wear use, the latter modality was promoted much more heavily by the manufacturers. The first silicone hydrogel lenses specifically promoted for daily wear were introduced in 2003. Data that we have gathered from annual contact lens fitting surveys demonstrate an immediate increase in market share whereby this lens type now represents more than one-third of soft lens fits in the United Kingdom. The success of this lens category is attributed to the health and safety benefits of silicone hydrogel materials and the positive impact of lens manufacturers by way of the effective marketing and distribution of these products.

  11. Annual report 2000

    International Nuclear Information System (INIS)

    2001-07-01

    Article VI.J of the Agency's Statute requires the Board of Governors to submit 'an annual report to the General Conference concerning the affairs of the Agency and any projects approved by the Agency'. This report covers the period 1 January to 31 December 2000

  12. IRI annual report 1989

    International Nuclear Information System (INIS)

    1990-01-01

    In this annual report of the Dutch Interfacultary Reactor Institute, summary reports are presented of current research and teaching activities during 1989 of the departments radiochemistry, radiation chemistry, radiation physics and reactor physics, operation and maintenance of, and experiments with the Delft Hoger Onderwijs reactor, nuclear instrumentation projects and supporting services. (H.W.). 299 refs.; 2 figs.; 7 tabs

  13. Annual report 1981

    International Nuclear Information System (INIS)

    1981-12-01

    This annual report contains short descriptions of the work done at the named institute. These concern the study of hyperfine interactions, experiments with synchroton radiation, experiments at storage rings, and experiments at CERN. Furthermore, a list of publications, contributions to conferences and these is presented. (HSI) [de

  14. CSIR Annual report 1966

    CSIR Research Space (South Africa)

    CSIR

    1966-01-01

    Full Text Available This report presents the twenty second annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1966, to the 31st December 1966. Balance sheets and statements of income and expenditure...

  15. Annual Report - ESCELSA - 1997

    International Nuclear Information System (INIS)

    1998-01-01

    The annual report of ESCELSA - Brazilian electric power distribution company - introduces the following main topics: state of Espirito Santo; strategic focus; financial performance; relation with investors; energy sales; market overview; market expansion; customers; technological stream; measuring quality; electric system; investments; protecting the environment; and resource allocation

  16. Annual Conference Abstracts

    Science.gov (United States)

    Journal of Engineering Education, 1972

    1972-01-01

    Includes abstracts of papers presented at the 80th Annual Conference of the American Society for Engineering Education. The broad areas include aerospace, affiliate and associate member council, agricultural engineering, biomedical engineering, continuing engineering studies, chemical engineering, civil engineering, computers, cooperative…

  17. HASYLAB annual report 1987

    International Nuclear Information System (INIS)

    1988-01-01

    This annual report contains extended abstracts about the work performed at HASYLAB together with a list of publications, speeches, and theses. The work concerns technical developments, the study of the electronic structure of atoms, molecules, solids, surfaces, and liquids, X-ray structure studies of solids and interfaces, molecular biology, further applications of synchrotron radiation, and experimental developments. (HSI)

  18. Annual report 1996

    International Nuclear Information System (INIS)

    1996-01-01

    This annual report presents an evaluation of activities of the Entomology Unit of the FAO/IAEA Agriculture and Biotechnology Laboratory, Seibersdorf. The major themes of the report include mass rearing and quality control in Tsetse fly and research on Medfly genetic sexing strains

  19. Annual report 1999

    International Nuclear Information System (INIS)

    1999-01-01

    This annual report presents an evaluation of activities of the Entomology Unit of the FAO/IAEA Agriculture and Biotechnology Laboratory, Seibersdorf. The major themes of the report include mass rearing and quality control in Tsetse fly and research on Medfly genetic sexing strains

  20. Annual report 1997

    International Nuclear Information System (INIS)

    1997-01-01

    This annual report presents an evaluation of activities of the Entomology Unit of the FAO/IAEA Agriculture and Biotechnology Laboratory, Seibersdorf. The major themes of the report include mass rearing and quality control in Tsetse fly and research on Medfly genetic sexing strains

  1. CSIR Annual report 1968

    CSIR Research Space (South Africa)

    CSIR

    1968-01-01

    Full Text Available This report presents the twenty fourth annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1968, to the 31st December 1968. Balance sheets and statements of income and expenditure...

  2. CSIR Annual report 1971

    CSIR Research Space (South Africa)

    CSIR

    1971-01-01

    Full Text Available This report presents the twenty seventh annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1971, to the 31st December 1971. Balance sheets and statements of income and expenditure...

  3. CSIR Annual report 1970

    CSIR Research Space (South Africa)

    CSIR

    1970-01-01

    Full Text Available This report presents the twenty sixth annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1970, to the 31st December 1970. Balance sheets and statements of income and expenditure...

  4. CSIR Annual report 1969

    CSIR Research Space (South Africa)

    CSIR

    1969-01-01

    Full Text Available This report presents the twenty fifth annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1969, to the 31st December 1969. Balance sheets and statements of income and expenditure...

  5. International energy annual, 1991

    International Nuclear Information System (INIS)

    1992-12-01

    This report is prepared annually and presents the latest information and trends on world energy production and consumption for petroleum, natural gas, coal, and electricity. Trade and reserves are shown for petroleum, natural gas, and coal. Prices are included for selected petroleum products. Production and consumption data are reported in standard units as well as British thermal units (Btu) and joules

  6. Uranium industry annual 1998

    International Nuclear Information System (INIS)

    1999-01-01

    The Uranium Industry Annual 1998 (UIA 1998) provides current statistical data on the US uranium industry's activities relating to uranium raw materials and uranium marketing. It contains data for the period 1989 through 2008 as collected on the Form EIA-858, ''Uranium Industry Annual Survey.'' Data provides a comprehensive statistical characterization of the industry's activities for the survey year and also include some information about industry's plans and commitments for the near-term future. Data on uranium raw materials activities for 1989 through 1998, including exploration activities and expenditures, EIA-estimated reserves, mine production of uranium, production of uranium concentrate, and industry employment, are presented in Chapter 1. Data on uranium marketing activities for 1994 through 2008, including purchases of uranium and enrichment services, enrichment feed deliveries, uranium fuel assemblies, filled and unfilled market requirements, and uranium inventories, are shown in Chapter 2. The methodology used in the 1998 survey, including data edit and analysis, is described in Appendix A. The methodologies for estimation of resources and reserves are described in Appendix B. A list of respondents to the ''Uranium Industry Annual Survey'' is provided in Appendix C. The Form EIA-858 ''Uranium Industry Annual Survey'' is shown in Appendix D. For the readers convenience, metric versions of selected tables from Chapters 1 and 2 are presented in Appendix E along with the standard conversion factors used. A glossary of technical terms is at the end of the report. 24 figs., 56 tabs

  7. KTA annual report 1980

    International Nuclear Information System (INIS)

    The annual report gives an overview of the rulemaking work in the individual fields as well as other activities, such as meetings, international codes of rules, and publications. KTA organization, including its administration and funds is listed. (orig./HP) [de

  8. IRI annual report 1989

    International Nuclear Information System (INIS)

    1990-01-01

    In this annual report of the Dutch Interfacultary Reactor Institute, summary reports are presented of current research and teaching activities during 1989 of the departments radiochemistry, radiation chemistry, radiation physics and reactor physics, operation and maintenance of, and experiments with the Delft Hoger Onderwijs reactor, nuclear instrumentation projects and supporting services. (H.W.). 145 refs.; 20 figs.; 4 fotos; 2 tabs

  9. Annual report 1981

    International Nuclear Information System (INIS)

    1982-01-01

    In this annual report the work done at the named Institute is described. This concerns particle and fields in the solar system, infrared astronomy, X-ray astronomy, γ-astronomy, and molecule spectroscopy. A list of publications is added. (HSI)

  10. ANCLI annual report 2003

    International Nuclear Information System (INIS)

    2003-01-01

    The National Association for the Information Local Commissions (ANCLI) was created in september 1999. This association aims to develop an exchange and information network for the information local commissions. In this framework it develops information sheets, Internet site, nuclear centers visits, colloquium and formations organizations. This report presents the annual activities for the year 2003. (A.L.B.)

  11. ANCLI annual report 2004

    International Nuclear Information System (INIS)

    2004-01-01

    The National Association for the Information Local Commissions (ANCLI) was created in september 1999. This association aims to develop an exchange and information network for the information local commissions. In this framework it develops information sheets, Internet site, nuclear centers visits, colloquium and formations organizations. This report presents the annual activities for the year 2004. (A.L.B.)

  12. Annual Report 2008

    Energy Technology Data Exchange (ETDEWEB)

    Keeley, N; Skalski, J [The Andrzej Soltan Institute for Nuclear Studies, Swierk-Otwock (Poland)

    2009-07-01

    The ''Annual Report 2008'' describes activities of Andrzej Soltan Institute for Nuclear Studies in 2008. Report consists of two parts. First one consists of general information about location, management, scientific council, personnel, financial support and conferences while the second one describes the scientific activity of Institute. A Foreword to all report written by Director of the Institute prof. Grzegorz Wrochna is also given.

  13. TIARA annual report 2004

    International Nuclear Information System (INIS)

    Ohara, Yoshihiro; Arakawa, Kazuo; Tanaka, Shigeru; Narumi, Kazumasa; Yoshida, Masaru; Itoh, Hisayoshi; Yoshikawa, Masato; Tanaka, Atsushi; Kobayashi, Yasuhiko; Fukuda, Mitsuhiro; Otsubo, Michiro; Yokota, Watalu; Nakamura, Yoshiteru

    2006-01-01

    This annual report describes research and development activities which have been performed with the TIARA (Takasaki Ion Accelerators for Advanced Radiation Application) facilities from April 1, 2004 to March 31, 2005. The 126 of the presented papers are indexed individually. A list of publications, the type of research collaborations and organization of TIARA are also given as appendices. (J.P.N.)

  14. Annual Report 2000

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-07-01

    The Institut Laue-Langevin (ILL) is an international research center using neutrons to probe the microscopic structure and dynamics of a broad range of materials. This annual report presents the ILL activities in 2000: the scientific highlights, the Millennium programme and the new developments, the workshops organized by the ILL, the experimental programme and the publications. (A.L.B.)

  15. International Energy Annual, 1992

    Energy Technology Data Exchange (ETDEWEB)

    1994-01-14

    This report is prepared annually and presents the latest information and trends on world energy production and consumption for petroleum, natural gas, coal, and electricity. Trade and reserves are shown for petroleum, natural gas, and coal. Prices are included for selected petroleum products. Production and consumption data are reported in standard units as well as British thermal units (Btu) and joules.

  16. ANCLI annual report 2002

    International Nuclear Information System (INIS)

    2002-01-01

    The National Association for the Information Local Commissions (ANCLI) was created in september 1999. This association aims to develop an exchange and information network for the information local commissions. In this framework it develops information sheets, Internet site, nuclear centers visits, colloquium and formations organizations. This report presents the annual activities for the year 2002. (A.L.B.)

  17. Annual General Meetings

    OpenAIRE

    2009-01-01

    We have produced this information booklet to explain why companies must – by law – hold an Annual General Meeting (AGM). The laws which cover AGMs are known as the Companies Acts. This guide gives only a summary of the rules for AGMs. If you have a concern about the AGM of a particular company, you should get independent legal advice.

  18. Annual report 1981, annex

    International Nuclear Information System (INIS)

    1982-01-01

    This volume entitled ''Annex to the annual report'' deals in more detail with the scientific works of the I.L.L.: the scientific activity of theoricians; experimental reports on inelastic scattering in simple solids, crystallographic and magnetic structures, fluids and amorphous substances, imperfections, biology, chemistry

  19. Annual report 1997

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-07-01

    This annual report presents an evaluation of activities of the Entomology Unit of the FAO/IAEA Agriculture and Biotechnology Laboratory, Seibersdorf. The major themes of the report include mass rearing and quality control in Tsetse fly and research on Medfly genetic sexing strains.

  20. Annual Report 2006

    International Nuclear Information System (INIS)

    Gawlikowicz, W.; Pienkowski, L.

    2007-03-01

    The Annual Report of the Heavy Ion Laboratory, Warsaw University describes the activities of Laboratory in 2006. The document consist of four parts: 'Laboratory Overview', 'Experiments and Experimental Set-ups', 'Experiments Using the Outside Facilities' and 'General Information on HIL Activities'. An 'Introduction' written by director of the Department prof. J. Jastrzebski is also given

  1. Annual report 1995

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-10-01

    The annual report from IKU (Continental Shelf Institute) in Norway deals with the market adjustment of research activities at the institute as a result of offshore cost-cutting policy in the petroleum industry. The market is about to shift focus from volume to competence. In practice, that means buying competence instead of project ideas or proposals

  2. BAM - Annual report 1975

    International Nuclear Information System (INIS)

    1976-06-01

    The annual report contains progress and activity reports of the presidential department, the departments metals and metal construction, civil engineering and building activities, organic matter, chemical safety engineering, special fields of materials testing, techniques independent of the type of material, an index, as well as general and statistic statements. (HK) [de

  3. Annual report - ENERSUL - 1999

    International Nuclear Information System (INIS)

    2000-01-01

    The annual report of ENERSUL - Brazilian electric power distribution company - introduces the following main topics: Outlook for the State of Mato Grosso do Sul; strategic focus; financial performance; relation with investors; energy sold; capacity increases; customers; customers; energy balance; performance and quality; electric system; investments; people; human resources; synergies; awards; workplace safety; social balance; and patrimonial balance

  4. 2001 annual report

    International Nuclear Information System (INIS)

    2002-01-01

    This document is the 2001 annual report of the French union of the petroleum industry (UFIP). It summarizes the highlights of the petroleum industry activity in France in 2001 and gives some additional information about the production, refining and distribution of petroleum products in the rest of the world. (J.S.)

  5. Annual Report 2007

    International Nuclear Information System (INIS)

    Zielinska, M.; Gawlikowicz, W.

    2008-03-01

    The Annual Report of the Heavy Ion Laboratory, Warsaw University describes the activities of Laboratory in 2007. The document consist of four parts: '' Laboratory Overview '', '' Experiments and Experimental Set-ups '', '' Experiments Using the Outside Facilities '' and '' General Information on HIL Activities ''. An '' Introduction '' written by director of the Department prof. J. Jastrzebski is also given

  6. International Energy Annual, 1992

    International Nuclear Information System (INIS)

    1994-01-01

    This report is prepared annually and presents the latest information and trends on world energy production and consumption for petroleum, natural gas, coal, and electricity. Trade and reserves are shown for petroleum, natural gas, and coal. Prices are included for selected petroleum products. Production and consumption data are reported in standard units as well as British thermal units (Btu) and joules

  7. 2010 AAUW Annual Report

    Science.gov (United States)

    American Association of University Women, 2010

    2010-01-01

    This report highlights some of the outstanding accomplishments of AAUW (American Association of University Women) for fiscal year 2010. This year's annual report also features stories of remarkable women who are leading the charge to break through barriers and ensure that all women have a fair chance. Sharon is working to reduce the pay gap…

  8. Annual report - ESCELSA - 1999

    International Nuclear Information System (INIS)

    2000-01-01

    The annual report of 1999 of ESCELSA - Brazilian electric power company - introduces the next main topics: state of Espirito Santo; strategic focus; financial performance; relation with investors; energy sales; customers; quality; electric system; investments; people; resources; synergies; awards; outlook; social balancing; and patrimonial balancing

  9. IKF annual report 1988

    International Nuclear Information System (INIS)

    1989-01-01

    The annual report of 1988 gives a survey of the following category of themes: nuclear physics, atom physics, nuclear methods, nuclear solid-state physics and developments of machines. Apart from the use of its own Van de Graaff accelerators the institute takes part in joint ventures in research, for example with the GSI (Association for Heavy-Ion Research) in Darmstadt. (DG) [de

  10. Annual Report 2005

    International Nuclear Information System (INIS)

    Zielinska, M.; Gawlikowicz, W.; Pienkowski, L.

    2006-05-01

    The Annual Report of the Heavy Ion Laboratory, Warsaw University describes the activities of Laboratory in 2005. The document consist of four parts: Laboratory Overview, Experiments and Experimental Set-ups, Experiments Using the Outside Facilities and General Information on HIL Activities. An Introduction written by director of the Department prof. J. Jastrzebski is also given

  11. KVI Annual Report 1982

    International Nuclear Information System (INIS)

    1983-04-01

    This annual report offers 93 informative descriptions of the current research projects at the KVI cyclotron during 1982. The projects are classed under the following heads: elastic and inelastic scattering; giant resonances; transfer and charge exchange reactions; breakup reactions; heavy ion reactions; electromagnetic and weak interactions; theoretical nuclear physics; atomic physics; nuclear solid state physics; cyclotron, computers and instrumentation; nuclear medicine; environmental studies. (Auth.)

  12. NERSC Annual Report 2004

    Energy Technology Data Exchange (ETDEWEB)

    Hules, John; Bashor, Jon; Yarris, Lynn; McCullough, Julie; Preuss, Paul; Bethel, Wes

    2005-04-15

    The National Energy Research Scientific Computing Center (NERSC) is the premier computational resource for scientific research funded by the DOE Office of Science. The Annual Report includes summaries of recent significant and representative computational science projects conducted on NERSC systems as well as information about NERSC's current and planned systems and services.

  13. Annual report 1979

    International Nuclear Information System (INIS)

    1979-12-01

    In this annual report the work done at the named institute is described. This concerns experiments with synchrotron radiations, high energy physics experiments at the PETRA and DORIS storage rings, studies of MFS interactions, and some neutrino experiments at CERN. A list of publications is included. (HSI)

  14. Annual Report 2000

    International Nuclear Information System (INIS)

    2000-01-01

    The Institut Laue-Langevin (ILL) is an international research center using neutrons to probe the microscopic structure and dynamics of a broad range of materials. This annual report presents the ILL activities in 2000: the scientific highlights, the Millennium programme and the new developments, the workshops organized by the ILL, the experimental programme and the publications. (A.L.B.)

  15. Total 2004 annual report

    International Nuclear Information System (INIS)

    2004-01-01

    This annual report of the Group Total brings information and economic data on the following topics, for the year 2004: the corporate governance, the corporate social responsibility, the shareholder notebook, the management report, the activities, the upstream (exploration and production) and downstream (refining and marketing) operating, chemicals and other matters. (A.L.B.)

  16. NERSC Annual Report 2002

    Energy Technology Data Exchange (ETDEWEB)

    Hules, John

    2003-01-31

    The National Energy Research Scientific Computing Center (NERSC) is the primary computational resource for scientific research funded by the DOE Office of Science. The Annual Report for FY2002 includes a summary of recent computational science conducted on NERSC systems (with abstracts of significant and representative projects), and information about NERSC's current and planned systems and service

  17. Annual results 2004

    International Nuclear Information System (INIS)

    2005-01-01

    This 2004 annual evaluation of the french RTE company (electric power transport network) provides information on the 2004 results on: institutional information, financial results, customers and market, industrial resources, environment and consultation, human resources and international aspects. (A.L.B.)

  18. Annual report SNET 2003

    International Nuclear Information System (INIS)

    2004-01-01

    This annual report of the SNET (National Society of Electricity and thermic) presents the society activities and the financial report for the year 2003. The society position in the market, the environmental policy, the performance, the workers and financial data are detailed. (A.L.B.)

  19. Environment annual report 1993

    International Nuclear Information System (INIS)

    1994-01-01

    In the 1993 Environment Annual Report for BNFL, data are presented for radioactive discharges to the environment and their associated doses to the criteria group members of the public in the vicinity of Sellafield, Drigg, Chapelcross, Springfields and Capenhurst. Similarly, data are also presented for non-radioactive discharges to water and air for each site. (UK)

  20. NUFFIC Annual Report, 1977.

    Science.gov (United States)

    Netherlands Universities Foundation for International Co-operation, The Hague.

    The 1977 annual report of the Netherlands Universities Foundation for International Cooperation (NUFFIC) considers the following topics: major developments in work and policy; relationships NUFFIC has with other organizations; University Development Cooperation; developments in international education; the functioning of the Consultative Structure…

  1. CSIR Annual report 1967

    CSIR Research Space (South Africa)

    CSIR

    1967-01-01

    Full Text Available This report presents the twenty third annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1967, to the 31st December 1967. Balance sheets and statements of income and expenditure...

  2. Annual report 1982. Annex

    International Nuclear Information System (INIS)

    This is the scientific annual report 1982 of the ILL on R and D activities of the different colleges: fundamental and nuclear physics, inelastic scattering in simple solids, crystallographic and magnetic structures, fluids and amorphous substances, imperfections, biology, chemistry, theory. Abstracts of the publications published during the year are presented

  3. CSIR Annual report 1980

    CSIR Research Space (South Africa)

    CSIR

    1980-01-01

    Full Text Available This report presents the thirty-sixth annual report of the CSIR. The report covers the period 1 January, 1980 to 31 December 1980. A balance sheet and statements of income and expenditure for the financial year ended 31st March 1980, certified...

  4. NRCC annual report, 1979

    International Nuclear Information System (INIS)

    1980-11-01

    This annual report of the National Research for Computation in Chemistry (NRCC) Division describes the program of research workshops, software development, and scientific research of the Division in 1979. This year marked the first full calendar year of activity of the Division. Initial staffing in the core scientific areas was completed by the addition of a crystallographer

  5. GKSS annual report 1983

    International Nuclear Information System (INIS)

    1984-01-01

    This annual report reviews the structure and activities of the GKSS in 1983. R and D work was done on reactor safety engineering, environmental research/environmental engineering and underwater technology. It also reports on cooperation with outside partners, the organization, financing, and developments in the staff structure as well as on publications, lectures, applications for patents, etc. (UA) [de

  6. NERSC Annual Report 2005

    Energy Technology Data Exchange (ETDEWEB)

    Hules (Ed.), John

    2006-07-31

    The National Energy Research Scientific Computing Center (NERSC) is the premier computational resource for scientific research funded by the DOE Office of Science. The Annual Report includes summaries of recent significant and representative computational science projects conducted on NERSC systems as well as information about NERSC's current and planned systems and services.

  7. ELETRONUCLEAR - Annual report - 1997

    International Nuclear Information System (INIS)

    1998-01-01

    The annual activities report of 1997 of ELETRONUCLEAR - Brazilian company responsible by the electric power generation from the nuclear technology - introduces the next main topics: company vision and mission; energy production and commercialization; investments in the electric power generation; economic and financial situation; social balancing; and patrimonial balancing

  8. Mail Office annual closure

    CERN Multimedia

    2013-01-01

    On the occasion of the annual closure of CERN, there will be no mail distributed on Friday 20 December 2013 but mail will be collected in the morning. Nevertheless, you will still be able to bring your outgoing mail to Building 555-R-002 until 12 noon.  

  9. PTB annual report 1985

    International Nuclear Information System (INIS)

    1986-02-01

    The annual report presents general information on the institution's activities and the various departments, and reports on scientific work in the field of metrology and safety engineering. Brief scientific accounts refer to work in the domains of mechanics and acoustics, electricity, heat, optics, industrial metrology, atomic physics, technical and scientific services, collection and disposal of radioactive waste. (DG) [de

  10. Annual Report 2004

    International Nuclear Information System (INIS)

    Swiboda, G.

    2005-01-01

    The Annual Report of the Institute of Atomic Energy describes the results of the research activities carried out in 2004. The document consist of seven parts: General Information; Operation and safety of MARIA reactor; Radiological protection and monitoring of environment; Nuclear techniques in health and environment protection and in last section the list of published in 2004 papers is presented

  11. NIKHEF Annual Report 1982

    International Nuclear Information System (INIS)

    1983-01-01

    In this annual report 1982, the NIKHEF research programs of high-energy physics, nuclear physics and radiochemistry is described in a wide context. Next, the reports of the individual projects of section-H and section-K are described in detail. Finally, the report gives some statistical information of publications, colloquia and co-workers. (Auth.)

  12. Annual report 1987

    International Nuclear Information System (INIS)

    1988-01-01

    In this annual report of the Dutch Interfacultary Reactor Institute, summary and detailed reports are presented of current research during 1987 of the departments radiochemistry, radiation chemistry, radiation physics and reactor physics. (H.W.). 61 refs.; 13 figs.; 14 tabs

  13. NIKHEF Annual Report 1981

    International Nuclear Information System (INIS)

    1982-01-01

    This annual report presents the activities of the Dutch National Institute for Nuclear and High Energy Physics (NIKHEF) during its first year. Following a general introduction to the research areas in which NIKHEF is involved, 29 brief reports from the project groups are presented. Details concerning personnel, participation in councils and committees, finances, publications, colloquia and participation in congresses and schools are included. (Auth.)

  14. Annual Report 2010

    International Nuclear Information System (INIS)

    Palacz, M.; Zielinska, M.

    2011-06-01

    The Annual Report of the Heavy Ion Laboratory, University of Warsaw describes the activities of Laboratory in 2010. The document consist of four parts: '' Laboratory Overview '', '' Experiments at HIL '', '' Experiments Using the Outside Facilities '' and '' Appendices '' where general information on HIL activities are described. An '' Introduction '' written by director of the Heavy Ion Laboratory prof. K. Rusek is also given.

  15. CSIR Annual report 1962

    CSIR Research Space (South Africa)

    CSIR

    1962-01-01

    Full Text Available This report presents the eighteenth annual report of the CSIR. The report covers the period 1 January, 1962 to 31 December 1962. A balance sheet and statements of income and expenditure for the financial year ended 31st March 1962, certified...

  16. CSIR Annual report 1983

    CSIR Research Space (South Africa)

    CSIR

    1983-01-01

    Full Text Available This report presents the thirty ninth annual report of the CSIR. The report covers the period 1 January, 1983 to 31 December 1983. A balance sheet and statements of income and expenditure for the financial year ended 31st March 1983, certified...

  17. CSIR Annual report 1981

    CSIR Research Space (South Africa)

    CSIR

    1981-01-01

    Full Text Available This report presents the thirty seventh annual report of the CSIR. The report covers the period 1 January, 1981 to 31 December 1981. A balance sheet and statements of income and expenditure for the financial year ended 31st March 1981, certified...

  18. CSIR Annual report 1982

    CSIR Research Space (South Africa)

    CSIR

    1982-01-01

    Full Text Available This report presents the thirty eighth annual report of the CSIR. The report covers the period 1 January, 1982 to 31 December 1982. A balance sheet and statements of income and expenditure for the financial year ended 31st March 1982, certified...

  19. CSIR Annual report 1963

    CSIR Research Space (South Africa)

    CSIR

    1963-01-01

    Full Text Available This report presents the nineteenth annual report of the Council for Scientific and Industrial Research. The report covers the period from the 1st January, 1963, to the 31st December 1963. Balance sheets and statements of income and expenditure...

  20. Sustainability Annual Report 2013

    OpenAIRE

    2013-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  1. Sustainability Annual Report 2014

    OpenAIRE

    2014-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  2. Sustainability Annual Report 2017

    OpenAIRE

    2017-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  3. Sustainability Annual Report 2011

    OpenAIRE

    2011-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  4. Sustainability Annual Report 2012

    OpenAIRE

    2012-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  5. Sustainability Annual Report 2015

    OpenAIRE

    2015-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  6. Sustainability Annual Report 2016

    OpenAIRE

    2016-01-01

    Every year, Virginia Tech releases a sustainability annual report to show the university’s progress in meeting the sustainability goals. The key sustainability metrics these reports cover include: greenhouse gas (GHG) emissions, energy use intensity, alternative transportation use, recycling, and water consumption.

  7. Annual Report 2008

    International Nuclear Information System (INIS)

    Keeley, N.; Skalski, J.

    2009-01-01

    The ''Annual Report 2008'' describes activities of Andrzej Soltan Institute for Nuclear Studies in 2008. Report consists of two parts. First one consists of general information about location, management, scientific council, personnel, financial support and conferences while the second one describes the scientific activity of Institute. A Foreword to all report written by Director of the Institute prof. Grzegorz Wrochna is also given

  8. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  9. Modeling and stabilities of Mg/MgH2 interfaces: A first-principles investigation

    Directory of Open Access Journals (Sweden)

    Jia-Jun Tang

    2014-07-01

    Full Text Available We have theoretically investigated the modeling and the structural stabilities of various Mg/MgH2 interfaces, i.e. Mg(101¯0/MgH2(210, Mg(0001/MgH2(101 and Mg(101¯0/MgH2(101, and provided illuminating insights into Mg/MgH2 interface. Specifically, the main factors, which impact the interfacial energies, are fully considered, including surface energies of two phases, mutual lattice constants of interface model, and relative position of two phases. The surface energies of Mg and MgH2, on the one hand, are found to be greatly impacting the interfacial energies, reflected by the lowest interfacial energy of Mg(0001/MgH2(101 which is comprised of two lowest energy surfaces. On the other hand, it is demonstrated that the mutual lattice constants and the relative position of two phases lead to variations of interfacial energies, thus influencing the interface stabilities dramatically. Moreover, the Mg-H bonding at interface is found to be the determinant of Mg/MgH2 interface stability. Lastly, interfacial and strain effects on defect formations are also studied, both of which are highly facilitating the defect formations. Our results provide a detailed insight into Mg/MgH2 interface structures and the corresponding stabilities.

  10. Silicon induced improvement in morpho-physiological traits of maize (zea mays l.) under water deficit

    International Nuclear Information System (INIS)

    Amin, M.; Ahmad, R.; Basra, S.M.A.; Murtaza, G.

    2014-01-01

    Current water scarcity is an emerging issue in semi-arid regions like Pakistan and cause of deterioration in productivity of crops to reduce crop yield all over the world. Silicon is known to be better against the deleterious effects of drought on plant growth and development. A pot study was conducted to evaluate the effect of Si nutrition (0, 50, 100 and 150 mg/kg) on the growth of a relatively drought tolerant (P-33H25) and sensitive (FH-810) maize hybrids. Two levels of soil water content were used viz. 100 and 60% of field capacity. Water deficit condition in soil significantly reduced morphological and physiological attributes of maize plants. Silicon application significantly improved the plant height, leaf area per plant, primary root length, dry matter of shoot and roots and plant dry matter, water relation and gas exchange characteristics of both maize cultivars under water deficit condition. Poor growth of drought stressed plants was significantly improved with Si application. The silicon fertilized (100 mg/kg) drought stressed plants of hybrid P-33H25 produced maximum (21.68% more) plant dry matter as compared to plants that were not provided with silicon nutrition. Nonetheless, silicon application (150 mg/kg) resulted in maximum increase (26.03%) in plant dry weight of hybrid FH-810 plants that were grown under limited moisture supply i.e., 60% FC. In conclusion silicon application to drought stressed maize plants was better to improve the growth and dry matter could be attributed to improved osmotic adjustment, photosynthetic rate and lowered transpiration. (author)

  11. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  12. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  13. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  14. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  15. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  16. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto

    2014-01-01

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  17. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  18. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  19. Dispersion toughened silicon carbon ceramics

    Science.gov (United States)

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  20. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Porz, F.

    1982-10-01

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

  1. The ARGUS silicon vertex detector

    International Nuclear Information System (INIS)

    Michel, E.; Ball, S.; Ehret, K.; Geyer, C.; Hesselbarth, J.; Hoelscher, A.; Hofmann, W.; Holzer, B.; Huepper, A.; Khan, S.; Knoepfle, K.T.; Seeger, M.; Spengler, J.; Brogle, M.; Horisberger, R.

    1994-01-01

    A silicon microstrip vertex detector has been built as an upgrade to the ARGUS detector for increased precision and efficiency in the reconstruction of decay vertices. This paper discusses the mechanical and electronic design of this device and presents first results from its successful test operation yielding an impact parameter resolution of about 18 μm. ((orig.))

  2. Impurities of oxygen in silicon

    International Nuclear Information System (INIS)

    Gomes, V.M.S.

    1985-01-01

    The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

  3. Seedless electroplating on patterned silicon

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

    2006-01-01

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

  4. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud

    1998-01-01

    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  5. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  6. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  7. prismane structure by silicon substitution

    Indian Academy of Sciences (India)

    Using the second-order Møller–Plesset perturbation (MP2) theoretic method and the cc-pVDZ basis set, it is shown that with an increase in the number of carbon atoms substituted by silicon, the [6]-prismane structure becomes increasingly more stable, relative to the two isolated benzene (like) structures. A similar trend is ...

  8. Thermal carbonization of nanoporous silicon

    Indian Academy of Sciences (India)

    An interesting phenomenon is observed while carrying out thermal carbonization of porous silicon (PS) with an aim to arrest the natural surface degradation, and it is a burning issue for PS-based device applications. A tubular carbon structure has been observed on the PS surface. Raman, Fourier transform infrared ...

  9. The CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Tkaczyk, S.; Carter, H.; Flaugher, B.

    1993-01-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the

  10. The CDF Silicon Vertex Trigger

    International Nuclear Information System (INIS)

    Dell'Orso, Mauro

    2006-01-01

    Motivations, design, performance and ongoing upgrade of the CDF Silicon Vertex Trigger are presented. The system provides CDF with a powerful tool for online tracking with offline quality in order to enhance the reach on B-physics and large P t -physics coupled to b quarks

  11. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  12. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untre...

  13. Absorption of silicon from artesian aquifer water and its impact on bone health in postmenopausal women: a 12 week pilot study

    Directory of Open Access Journals (Sweden)

    Lee Tsz

    2010-10-01

    Full Text Available Abstract Background Decreased bone mineral density and osteoporosis in postmenopausal women represents a growing source of physical limitations and financial concerns in our aging population. While appropriate medical treatments such as bisphosphonate drugs and hormone replacement therapy exist, they are associated with serious side effects such as osteonecrosis of the jaw or increased cardiovascular risk. In addition to calcium and vitamin D supplementation, previous studies have demonstrated a beneficial effect of dietary silicon on bone health. This study evaluated the absorption of silicon from bottled artesian aquifer water and its effect on markers of bone metabolism. Methods Seventeen postmenopausal women with low bone mass, but without osteopenia or osteoporosis as determined by dual x-ray absorptiometry (DEXA were randomized to drink one liter daily of either purified water of low-silicon content (PW or silicon-rich artesian aquifer water (SW (86 mg/L silica for 12 weeks. Urinary silicon and serum markers of bone metabolism were measured at baseline and after 12 weeks and analyzed with two-sided t-tests with p Results The urinary silicon level increased significantly from 0.016 ± 0.010 mg/mg creatinine at baseline to 0.037 ± 0.014 mg/mg creatinine at week 12 in the SW group (p = 0.003, but there was no change for the PW group (0.010 ± 0.004 mg/mg creatinine at baseline vs. 0.009 ± 0.006 mg/mg creatinine at week 12, p = 0.679. The urinary silicon for the SW group was significantly higher in the silicon-rich water group compared to the purified water group (p Conclusions These findings indicate that bottled water from artesian aquifers is a safe and effective way of providing easily absorbed dietary silicon to the body. Although the silicon did not affect bone turnover markers in the short-term, the mineral's potential as an alternative prevention or treatment to drug therapy for osteoporosis warrants further longer-term investigation

  14. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  15. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  16. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  17. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class...... in the silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...

  18. Epitaxial growth of silicon for layer transfer

    Science.gov (United States)

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  19. Nanoparticle enhanced evaporation of liquids: A case study of silicone oil and water

    OpenAIRE

    Zhang, Wenbin; Shen, Rong; Lu, Kunquan; Ji, Ailing; Cao, Zexian

    2012-01-01

    Evaporation is a fundamental physical phenomenon, of which many challenging questions remain unanswered. Enhanced evaporation of liquids in some occasions is of enormous practical significance. Here we report the enhanced evaporation of the nearly permanently stable silicone oil by dispersing with nanopariticles including CaTiO3, anatase and rutile TiO2. An evaporation rate as high as 1.33 mg/h·cm2 was measured in silicone oil when dispersed with 100 nm-sized CaTiO3 particles. Dependence of e...

  20. Defect and phase stability of solid solutions of Mg2X with an antifluorite structure: An ab initio study

    International Nuclear Information System (INIS)

    Viennois, Romain; Jund, Philippe; Colinet, Catherine; Tédenac, Jean-Claude

    2012-01-01

    First principles calculations are done for Mg 2 X (X=Si, Ge or Sn) antifluorite compounds and their solid solutions in order to investigate their pseudo-binary phase diagram. The formation energies of the end-member compounds agree qualitatively with the experiments. For X=Si and Ge, there is a complete solubility, but we observe a miscibility gap in the pseudo-binary phase diagram Mg 2 Si–Mg 2 Sn. This agrees with the most recent experiments and phase diagram assessments. Calculated electronic properties of Mg 2 Si 1−x Sn x alloys qualitatively agree with experiments and in particular the energy bandgap decreases when Si is substituted by Sn. Supercell calculations are also done in order to determine the most stable defects and the doping induced by these defects in the three end-member compounds. We find that the intrinsic n-doping in pure Mg 2 Si can be attributed to the presence of magnesium atoms in interstitial positions. In Mg 2 Ge and Mg 2 Sn, since other defects are stable, they can be also of p-type. - Graphical abstract: Evidence of a miscibility gap from the plot of the formation energy vs x Si (silicon content) for the solid solutions Mg 2 Si–Mg 2 Sn. Highlights: ► First-principles study of the stability of Mg 2 Si–Mg 2 X alloys (X=Ge or Sn) and their defects. ► Mg 2 Si–Mg 2 Ge alloys form a complete series of solid solutions. ► Miscibility gap is found in Mg 2 Si–Mg 2 Sn alloys. ► Interstitial defects are more stable in Mg 2 Si and induce n-doping.

  1. Preparing rare earth-silicon-iron-aluminum alloys

    International Nuclear Information System (INIS)

    Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

    1980-01-01

    As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

  2. 2017 Annual Disability Statistics Supplement

    Science.gov (United States)

    Lauer, E. A; Houtenville, A. J.

    2018-01-01

    The "Annual Disability Statistics Supplement" is a companion report to the "Annual Disability Statistics Compendium." The "Supplement" presents statistics on the same topics as the "Compendium," with additional categorizations by demographic characteristics including age, gender and race/ethnicity. In…

  3. Fourth annual report 1991

    International Nuclear Information System (INIS)

    1991-01-01

    The Independent Radiation Monitoring Scheme for Clwyd began its monitoring programme in Clwyd in 1988. This is the fourth report on the results of the radiation monitoring carried out within Clwyd. The historical reasons for the conception of the Radiation Monitoring Scheme are given in the First Annual Report together with the protocol of operation and detailed sampling and monitoring information. The fourth Annual Report identifies any changes in techniques that have occurred in the last twelve months together with the latest monitoring and analytical data. Samples of air, beach materials, coastal sand and silt, seaweed, meat, fish and milk were taken from various locations within the county. No significant charges in radiation levels were found when compared with data from previous years. The values have remained within the range currently being expected throughout the United Kingdom. (author)

  4. Renewable energy annual 1995

    International Nuclear Information System (INIS)

    1995-12-01

    The Renewable Energy Annual 1995 is the first in an expected series of annual reports the Energy Information Administration (EIA) intends to publish to provide a comprehensive assessment of renewable energy. This report presents the following information on the history, status, and prospects of renewable energy data: estimates of renewable resources; characterizations of renewable energy technologies; descriptions of industry infrastructures for individual technologies; evaluations of current market status; and assessments of near-term prospects for market growth. An international section is included, as well as two feature articles that discuss issues of importance for renewable energy as a whole. The report also contains a number of technical appendices and a glossary. The renewable energy sources included are biomass (wood), municipal solid waste, biomass-derived liquid fuels, geothermal, wind, and solar and photovoltaic

  5. Annual General Asssembly

    CERN Document Server

    Pension Fund

    2005-01-01

    All members and beneficiaries of the Pension Fund are invited to attend the Annual General Asssembly to be held in the CERN Council Chamber on Thursday 13 October 2005 at 14:30 The Agenda comprises: Opening Remarks (J. Bezemer) Results and presentation of the Annual Report 2004 - Role of asset classes in pension funds (C. Cuénoud). Copies of the 2004 Report are available from departmental secretariats. Package of measures aiming at equilibrating the Fund - Proposals by the Governing Board (J.-P. Matheys). Questions from members and beneficiaries. Persons wishing to ask questions are encouraged to submit them, where possible, in writing in advance, addressed to Mr C. Cuénoud, Administrator of the Fund. Conclusions (J. Bezemer). As usual, participants are invited to drinks after the assembly. NB The minutes of the 2004 General Assembly are available from the Administration of the Fund (tel.(+4122)767 27 42; e-mail Sophia.Revol@cern.ch)

  6. Annual General Asssembly

    CERN Multimedia

    2005-01-01

    All members and beneficiaries of the Pension Fund are invited to attend the Annual General Asssembly to be held in the CERN Council Chamber on Thursday 13 October 2005 at 14:30 The Agenda comprises: Opening Remarks (J. Bezemer) Results and presentation of the Annual Report 2004 - Role of asset classes in pension funds (C. Cuénoud) Copies of the 2004 Report are available from departmental secretariats. Package of measures aiming at equilibrating the Fund - Proposals by the Governing Board (J.-P. Matheys) Questions from members and beneficiaries Persons wishing to ask questions are encouraged to submit them, where possible, in writing in advance, addressed to Mr C. Cuénoud, Administrator of the Fund. Conclusions (J. Bezemer) As usual, participants are invited to drinks after the assembly. NB The minutes of the 2004 General Assembly are available from the Administration of the Fund (tel.(+4122)767 27 42; e-mail Sophia.Revol@cern.ch)

  7. Coal industry annual 1997

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-12-01

    Coal Industry Annual 1997 provides comprehensive information about US coal production, number of mines, prices, productivity, employment, productive capacity, and recoverable reserves. US Coal production for 1997 and previous years is based on the annual survey EIA-7A, Coal Production Report. This report presents data on coal consumption, coal distribution, coal stocks, coal prices, and coal quality for Congress, Federal and State agencies, the coal industry, and the general public. Appendix A contains a compilation of coal statistics for the major coal-producing States. This report includes a national total coal consumption for nonutility power producers that are not in the manufacturing, agriculture, mining, construction, or commercial sectors. 14 figs., 145 tabs.

  8. Annual recertification: fun? Wow!

    Science.gov (United States)

    Amos, A

    1994-01-01

    Learning is critical to fostering a knowledge base required for maintaining currency and furthering professional development. In the ever-changing field of nephrology, most skills practised in nursing are considered to be sanctioned medical acts or added nursing skills. Therefore, annual recertification of the skills designated as sanctioned medical acts is an expectation of the College of Nurses of Ontario. The Wellesley Hospital policy indicates one time only or annual approval of the added nursing skills. The article will discuss the use of games as a creative, non-threatening educational tool in the recertification/re-approval process currently in place at The Wellesley Hospital, renal programs. In the past two years, several games or alternative teaching strategies have been utilized to assist the staff in preparing for recertification. This paper will examine the advantages and disadvantages of utilizing alternative teaching formats. Commentary regarding the response of staff nurses, nursing management and education will be highlighted.

  9. Annual Energy Review 2007

    Energy Technology Data Exchange (ETDEWEB)

    Seiferlein, Katherine E. [USDOE Energy Information Administration (EIA), Washington, DC (United States)

    2008-06-01

    The Annual Energy Review (AER) is the Energy Information Administration's (EIA) primary report of annual historical energy statistics. For many series, data begin with the year 1949. Included are data on total energy production, consumption, and trade; overviews of petroleum, natural gas, coal, electricity, nuclear energy, renewable energy, international energy, as well as financial and environment indicators; and data unit conversion tables. Publication of this report is required under Public Law 95–91 (Department of Energy Organization Act), Section 205(c), and is in keeping with responsibilities given to the EIA under Section 205(a)(2), which states: “The Administrator shall be responsible for carrying out a central, comprehensive, and unified energy data and information program which will collect, evaluate, assemble, analyze, and disseminate data and information....”

  10. Petroleum marketing annual 1994

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-08-24

    The Petroleum Marketing Annual (PMA) provides information and statistical data on a variety of crude oils and refined petroleum products. The publication presents statistics on crude oil costs and refined petroleum products sales for use by industry, government, private sector analysis, educational institutions, and consumers. Data on crude oil include the domestic first purchase price, the fob and landed cost of imported crude oil, and the refiners` acquisition cost of crude oil. Refined petroleum product sales data include motor gasoline, distillates, residuals, aviation fuels, kerosene, and propane. The Petroleum Marketing Division, Office of Oil and Gas, Energy Information Administration ensures the accuracy, quality, and confidentiality of the published data in the Petroleum Marketing Annual. For this production, all estimates have been recalculated since their earlier publication in the Petroleum Marketing Monthly (PMM). These calculations made use of additional data and corrections that were received after the PMM publication date.

  11. NAGRA Annual report 2010

    International Nuclear Information System (INIS)

    2011-04-01

    This annual report presents the highlights of the activities carried out by the Swiss National Co-operative for the Disposal of Radioactive Wastes NAGRA during the year 2010. These include reviews by various commissions of the NAGRA co-operative's proposals for possible sites for nuclear waste repositories. Also, the enhancements made concerning information facilities for the general public at the co-operative's rock laboratories are mentioned. The operation of initial satellite-based precision measurement systems for movements in the earth's crust is noted. Organisational aspects and international co-operation are discussed. This annual report also looks at NAGRA's organisational structures and its commercial accounts. Appendices provide details on waste inventories and volumes and publications made in 2010. A selection of relevant internet addresses is also provided

  12. 1986 Annual Report

    International Nuclear Information System (INIS)

    1987-01-01

    This annual report describes the reasearch activity carried out during 1986 by the Fusion Department of the Italian Commision for Nuclear and Alternative Energy Sources (ENEA). The report outlines the main results obtained by the three major projects of the Fusion Department (Fusion Physics, Frascati Tokamak Upgrade, and Fusion Reactor Engineering), plus the divisional project Inertial Confinement mentioned separately because of its particular scientific content. Most of the research work was performed by the Fusion Department at its location at the ENEA Frascati Energy Research Center, but some work was also done elsewhere, or with recourse to other ENEA departments. The research activity described in this annual report was carried out with the frame of the Association Euratom-ENEA on Fusion, with the exception of some minor activities

  13. NAGRA Annual report 2010

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2011-04-15

    This annual report presents the highlights of the activities carried out by the Swiss National Co-operative for the Disposal of Radioactive Wastes NAGRA during the year 2010. These include reviews by various commissions of the NAGRA co-operative's proposals for possible sites for nuclear waste repositories. Also, the enhancements made concerning information facilities for the general public at the co-operative's rock laboratories are mentioned. The operation of initial satellite-based precision measurement systems for movements in the earth's crust is noted. Organisational aspects and international co-operation are discussed. This annual report also looks at NAGRA's organisational structures and its commercial accounts. Appendices provide details on waste inventories and volumes and publications made in 2010. A selection of relevant internet addresses is also provided

  14. International energy annual 1997

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-04-01

    The International Energy Annual presents an overview of key international energy trends for production, consumption, imports, and exports of primary energy commodities in over 220 countries, dependencies, and areas of special sovereignty. Also included are population and gross domestic product data, as well as prices for crude oil and petroleum products in selected countries. Renewable energy reported in the International Energy Annual includes hydroelectric power and geothermal, solar, and wind electric power. Also included are biomass electric power for Brazil and the US, and biomass, geothermal, and solar energy produced in the US and not used for electricity generation. This report is published to keep the public and other interested parties fully informed of primary energy supplies on a global basis. The data presented have been largely derived from published sources. The data have been converted to units of measurement and thermal values (Appendices E and F) familiar to the American public. 93 tabs.

  15. Renewable energy annual 1995

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-12-01

    The Renewable Energy Annual 1995 is the first in an expected series of annual reports the Energy Information Administration (EIA) intends to publish to provide a comprehensive assessment of renewable energy. This report presents the following information on the history, status, and prospects of renewable energy data: estimates of renewable resources; characterizations of renewable energy technologies; descriptions of industry infrastructures for individual technologies; evaluations of current market status; and assessments of near-term prospects for market growth. An international section is included, as well as two feature articles that discuss issues of importance for renewable energy as a whole. The report also contains a number of technical appendices and a glossary. The renewable energy sources included are biomass (wood), municipal solid waste, biomass-derived liquid fuels, geothermal, wind, and solar and photovoltaic.

  16. Nagra annual report 2013

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2014-07-01

    This annual report made by the Swiss National Cooperative for the Disposal of Radioactive Waste (NAGRA) takes a look at the cooperative’s activities and work done in 2013. Nagra’s task is recapitulated. Developments in 2013 concerning legislation, inventories of radioactive materials, sectorial planning and scientific and technical aspects are examined. Work done in the rock laboratories, in the public relations sector and consulting areas is looked at. Nagra’s organizational structure with its management, commissions and auditors is commented on and an organigram of the head office is presented. On the financial side of things, the annual financial statement with incomes, cash flow and accumulated accounts is presented as is the report made by the statutory auditors. An appendix to the report contains details on waste inventories and volumes, a list publications made in 2012 as well as Internet addresses and a glossary.

  17. Petroleum marketing annual 1994

    International Nuclear Information System (INIS)

    1995-01-01

    The Petroleum Marketing Annual (PMA) provides information and statistical data on a variety of crude oils and refined petroleum products. The publication presents statistics on crude oil costs and refined petroleum products sales for use by industry, government, private sector analysis, educational institutions, and consumers. Data on crude oil include the domestic first purchase price, the fob and landed cost of imported crude oil, and the refiners' acquisition cost of crude oil. Refined petroleum product sales data include motor gasoline, distillates, residuals, aviation fuels, kerosene, and propane. The Petroleum Marketing Division, Office of Oil and Gas, Energy Information Administration ensures the accuracy, quality, and confidentiality of the published data in the Petroleum Marketing Annual. For this production, all estimates have been recalculated since their earlier publication in the Petroleum Marketing Monthly (PMM). These calculations made use of additional data and corrections that were received after the PMM publication date

  18. Nagra annual report 2013

    International Nuclear Information System (INIS)

    2014-01-01

    This annual report made by the Swiss National Cooperative for the Disposal of Radioactive Waste (NAGRA) takes a look at the cooperative’s activities and work done in 2013. Nagra’s task is recapitulated. Developments in 2013 concerning legislation, inventories of radioactive materials, sectorial planning and scientific and technical aspects are examined. Work done in the rock laboratories, in the public relations sector and consulting areas is looked at. Nagra’s organizational structure with its management, commissions and auditors is commented on and an organigram of the head office is presented. On the financial side of things, the annual financial statement with incomes, cash flow and accumulated accounts is presented as is the report made by the statutory auditors. An appendix to the report contains details on waste inventories and volumes, a list publications made in 2012 as well as Internet addresses and a glossary

  19. Coal industry annual 1997

    International Nuclear Information System (INIS)

    1998-12-01

    Coal Industry Annual 1997 provides comprehensive information about US coal production, number of mines, prices, productivity, employment, productive capacity, and recoverable reserves. US Coal production for 1997 and previous years is based on the annual survey EIA-7A, Coal Production Report. This report presents data on coal consumption, coal distribution, coal stocks, coal prices, and coal quality for Congress, Federal and State agencies, the coal industry, and the general public. Appendix A contains a compilation of coal statistics for the major coal-producing States. This report includes a national total coal consumption for nonutility power producers that are not in the manufacturing, agriculture, mining, construction, or commercial sectors. 14 figs., 145 tabs

  20. 2017 Annual Technology Baseline

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Wesley J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Hand, M. M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Eberle, Annika [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beiter, Philipp C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kurup, Parthiv [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Turchi, Craig S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Feldman, David J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Margolis, Robert M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Augustine, Chad R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Maness, Michael [Formerly NREL; O' Connor, Patrick [Oak Ridge National Laboratory

    2018-03-26

    Consistent cost and performance data for various electricity generation technologies can be difficult to find and may change frequently for certain technologies. With the Annual Technology Baseline (ATB), the National Renewable Energy Laboratory annually provides an organized and centralized set of such cost and performance data. The ATB uses the best information from the Department of Energy national laboratories' renewable energy analysts as well as information from the Energy Information Administration for fuel-based technologies. The ATB has been reviewed by experts and it includes the following electricity generation technologies: land-based wind, offshore wind, utility-scale solar photovoltaics (PV), commercial-scale solar PV, residential-scale solar PV, concentrating solar power, geothermal power, hydropower, coal, natural gas, nuclear, and conventional biopower. This webinar presentation introduces the 2017 ATB.

  1. Microstructural stability concerning a potential nuclear use of Al-Mg-Si

    International Nuclear Information System (INIS)

    Urreta de Pereyra, S.E.

    1990-01-01

    Mechanical properties and microstructures in an Al-Mg-Si alloy (6061) are known to change during irradiation. Many authors report that mechanical strength reduces after irradiation and that the main cause of this drastic softening was shown to be the dissolution of hardening precipitates. In this work, the stability of needle-shaped precipitates before irradiation is studied. Evidence is provided to suggest that β' may not transform directly in β ' by growth, but that another nucleation event is necessary. For concentrations of about 1wt% Mg 2 Si, accidental reversion treatments of short times above 250 deg C are found to lead to a catastrophic drop in strength as a result of β' phase dissolution without simultaneous precipitation of β ' . It was also found that these phases may differ in composition as well as in structure as reported in the literature. Small precipitates are found in grain boundaries that are richer in silicon than the equilibrium phase Mg 2 Si. (Author)

  2. Transformation of Mg-bearing amorphous calcium carbonate to Mg-calcite - In situ monitoring

    Science.gov (United States)

    Purgstaller, Bettina; Mavromatis, Vasileios; Immenhauser, Adrian; Dietzel, Martin

    2016-02-01

    The formation of Mg-bearing calcite via an amorphous precursor is a poorly understood process that is of relevance for biogenic and abiogenic carbonate precipitation. In order to gain an improved insight on the controls of Mg incorporation in calcite formed via an Mg-rich amorphous calcium carbonate (Mg-ACC) precursor, the precipitation of Mg-ACC and its transformation to Mg-calcite was monitored by in situ Raman spectroscopy. The experiments were performed at 25.0 ± 0.03 °C and pH 8.3 ± 0.1 and revealed two distinct pathways of Mg-calcite formation: (i) At initial aqueous Mg/Ca molar ratios ⩽ 1:6, Mg-calcite formation occurs via direct precipitation from solution. (ii) Conversely, at higher initial Mg/Ca molar ratios, Mg-calcite forms via an intermediate Mg-rich ACC phase. In the latter case, the final product is a calcite with up to 20 mol% Mg. This Mg content is significant higher than that of the Mg-rich ACC precursor phase. Thus, a strong net uptake of Mg ions from the solution into the crystalline precipitate throughout and also subsequent to ACC transformation is postulated. Moreover, the temporal evolution of the geochemical composition of the reactive solution and the Mg-ACC has no significant effect on the obtained ;solubility product; of Mg-ACC. The enrichment of Mg in calcite throughout and subsequent to Mg-ACC transformation is likely affected by the high aqueous Mg/Ca ratio and carbonate alkalinity concentrations in the reactive solution. The experimental results have a bearing on the formation mechanism of Mg-rich calcites in marine early diagenetic environments, where high carbonate alkalinity concentrations are the rule rather than the exception, and on the insufficiently investigated inorganic component of biomineralisation pathways in many calcite secreting organisms.

  3. TIARA annual report 1999

    Energy Technology Data Exchange (ETDEWEB)

    Saidoh, Masahiro; Toraishi, Akio; Itoh, Hisayoshi [eds.; Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; and others

    2000-10-01

    This annual report describes research and development activities which have been performed with the JAERI TIARA (Takasaki Ion Accelerators for Advanced Radiation Application) facilities from April 1, 1999 to March 31, 2000. Summary reports of 106 papers and brief descriptions on the status of TIARA in the period are contained. A list of publications, the type of research collaborations and organization of TIARA are also given as appendices. (author)

  4. TIARA annual report 2000

    Energy Technology Data Exchange (ETDEWEB)

    Saidoh, Masahiro; Toraishi, Akio; Namba, Hideki [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; and others

    2001-11-01

    This annual report describes research and development activities which have been performed with the JAERI TIARA (Takasaki Ion Accelerators for Advanced Radiation Application) facilities from April 1, 2000 to March 31, 2001. Summary reports of 103 papers and brief descriptions on the status of TIARA in the period are contained. A list of publications, the type of research collaborations and organization of TIARA are also given as appendices. (author)

  5. Annual report 2005

    International Nuclear Information System (INIS)

    2005-01-01

    Areva is a world energy expert on technological solutions for nuclear power generation and electricity transmission and distribution. This 2005 annual report provides information on the Group results in the following domains: information pertaining to the transaction, general information on the company and share capital, information on company operations, new developments and future prospects, assets, financial position, financial performance, corporate governance, recent developments and outlook. (A.L.B.)

  6. Uranium industry annual, 1988

    International Nuclear Information System (INIS)

    1989-01-01

    This report presents data on US uranium raw materials and marketing activities of the domestic uranium industry. It contains aggregated data reported by US companies on the ''Uranium Industry Annual Survey'' (1988), Form EIA-858, and historical data from prior data collections and other pertinent sources. The report was prepared by the Energy Information Administration (EIA), the independent agency for data collection and analysis with the US Department of Energy

  7. Annual Report 2006

    International Nuclear Information System (INIS)

    Swiboda, G.

    2007-01-01

    The Annual Report of the Institute of Atomic Energy describes the results of the research activities carried out in 2006. The document consist of seven parts: General Information; Operation and safety of MARIA reactor; Radiation protection and dosimetry; Nuclear Technology in Energy Generation; Solid State Physics; Nuclear techniques in Health and Environment Protection management of Hazards and in last section the list of published in 2006 papers, conferences, seminars, workshops, research projects and educational activities are presented

  8. Risoe annual report 1987

    International Nuclear Information System (INIS)

    1988-06-01

    An explanation of Risoe National Laboratory's function within the Danish research system is followed by brief accounts of research activities at Risoe during 1987. Energy resources, technology and policy are discussed, the annual accounts are presented, a guide to the National Laboratory and a list of its publications are given. Some of the research activities that took place in 1987 described in more detail are within the fields of chemistry and the environment, superconductivity, new aspects of powdery mildew, polymers and robotics. (AB)

  9. Annual Report 2005

    Energy Technology Data Exchange (ETDEWEB)

    Swiboda, G [Institute of Atomic Energy, Otwock-Swierk (Poland)

    2006-07-01

    The Annual Report of the Institute of Atomic Energy describes the results of the research activities carried out in 2005. The document consist of seven parts: General Information; Operation and safety of MARIA reactor; Radiological protection and dosimetry; Nuclear Technology in Energy Generation; Solid State Physics; Nuclear techniques in Health and Environment Protection management of Hazards and in last section the list of published in 2004 papers, conferences, seminars, workshops, research projects and educational activities are presented.

  10. Annual Report 1985

    International Nuclear Information System (INIS)

    Muenze, R.

    1986-06-01

    This annual report covers the work carried out at the Radioisotope Department, ZfK Rossendorf, during the year 1985. It contains 12 contributions related to the development of processes for generating radioisotopes, 23 contributions related to the synthesis of radioactive compounds, and 26 contributions related to the characterization of radioactive compounds. All contributions are published in summary form only and are individually processed for the INIS database. Additionally, a list is given of publications and lectures issued between January and December 1985

  11. ILL Annual Report 1974

    International Nuclear Information System (INIS)

    1974-01-01

    This annual report provides a general view of the activities of the different sections of the ILL. In 1974, twenty-two different neutron spectrometers with different characteristics were available on a regular basis. Moreover, a number of special neutron sources were employed for on-line experiments. The major effort was devoted to an increase in experimental systems and to the development of new measurement techniques [fr

  12. OPEC annual report 1983

    Energy Technology Data Exchange (ETDEWEB)

    1983-01-01

    This annual report is concerned with the following items: the general economic situation of OPEC member countries, other developing countries and the industrial countries; energy market developments (environment, crude oil, crude oil prices, oil stock movements); upstream and downstream activities (exploration, production and reserves, refining, petrochemicals, hydrocarbon transportation, legislation, contracts and agreements in Member Countries); activities of the Secretariat. The annexes contain statistical data, press releases and resolutions and a schedule of member Country representatives and officials of the Secretariat.

  13. Annual report 1983

    International Nuclear Information System (INIS)

    Van de Vyver, R.E.

    1983-01-01

    In 1983, the various research projects in which the nuclear physics laboratory of Ghent State University is involved, were continued. In the present Annual Report, the results obtained in the field of photofission, photonuclear reactions positron annihilation, dosimetry and nuclear theory are summarized. The new 10 MeV high duty factor linear electron accelerator is presently being installed: performance tests will be carried out until July 1984; after which this facility will gradually become available for nuclear research purposes. (AF)

  14. Annual Report 2005

    International Nuclear Information System (INIS)

    Swiboda, G.

    2006-01-01

    The Annual Report of the Institute of Atomic Energy describes the results of the research activities carried out in 2005. The document consist of seven parts: General Information; Operation and safety of MARIA reactor; Radiological protection and dosimetry; Nuclear Technology in Energy Generation; Solid State Physics; Nuclear techniques in Health and Environment Protection management of Hazards and in last section the list of published in 2004 papers, conferences, seminars, workshops, research projects and educational activities are presented

  15. Annual report 1980

    International Nuclear Information System (INIS)

    1980-12-01

    In this annual report a survey is given about the research programs of the named institute during 1980. The research concerns experiments with synchrotron radiation, hyperfine structure studies, experiments with the DORIS and PETRA storage rings, and experiments at the CERN accelerators. Furthermore the development of instruments in this institute is described. In addition a list of publications, contributions to conferences, and theses of this institute is given. (HSI)

  16. NERSC 1998 annual report

    Energy Technology Data Exchange (ETDEWEB)

    Hules, John (ed.)

    1999-03-01

    This 1998 annual report from the National Scientific Energy Research Computing Center (NERSC) presents the year in review of the following categories: Computational Science; Computer Science and Applied Mathematics; and Systems and Services. Also presented are science highlights in the following categories: Basic Energy Sciences; Biological and Environmental Research; Fusion Energy Sciences; High Energy and Nuclear Physics; and Advanced Scientific Computing Research and Other Projects.

  17. TIARA annual report 2003

    International Nuclear Information System (INIS)

    Ohara, Yoshiro; Arakawa, Kazuo; Tanaka, Shigeru; Naramoto, Hiroshi; Yoshida, Masaru; Itoh, Hisayosi; Yoshikawa, Masato; Tanaka, Atsushi; Kobayashi, Yasuhiko; Fukuda, Mitsuhiro; Otsubo, Michiaki; Tajima, Satoshi; Tanaka, Susumu

    2004-11-01

    This annual report describes research and development activities which have been performed with the JAERI TIARA (Takasaki Ion Accelerators for Advanced Radiation Application) facilities from April 1, 2003 to March 31, 2004. Summary reports of 115 papers and brief descriptions on the status of TIARA in the period are contained. A list of publications, the type of research collaborations and organization of TIARA are also given as appendices. (author)

  18. Annual Pension Fund Update

    CERN Multimedia

    Pension Fund

    2011-01-01

    All members and beneficiaries of the Pension Fund are invited to attend the Annual Pension Fund Update to be held in the CERN Council Chamber on Tuesday 20 September 2011 from 10-00 to 12-00 a.m. Copies of the 2010 Financial Statements are available from departmental secretariats. Coffee and croissants will be served prior to the meeting as of 9-30 a.m.

  19. Annual Report 1979

    International Nuclear Information System (INIS)

    1980-01-01

    This annual report from the Netherlands Centre for Energy Research, includes the progress made in the five main research areas: fission energy, nuclear fusion and superconductivity, combustion energy (including environmental research), current energy and non-energetic applications of nuclear fission. Studies performed by the Energy Study Centrum, a department within ECN, and the Bureau for Energy Research Projects are described. A financial report is presented and a list of publications included. (C.F.)

  20. Annual report ISIS

    International Nuclear Information System (INIS)

    Biggin, S.

    1988-07-01

    The paper presents the 1988 Annual Report for ISIS (United Kingdom). A description is given of the accelerator and target station. The capability of ISIS is described including the facilities available and the type of science carried out using the instruments. The development and support activities are outlined, along with the ISIS organisation and user interaction. The appendix contains experimental reports on research work conducted at ISIS. (U.K.)