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Sample records for metal quantum dots

  1. Positioning of quantum dots on metallic nanostructures

    Science.gov (United States)

    Kramer, R. K.; Pholchai, N.; Sorger, V. J.; Yim, T. J.; Oulton, R.; Zhang, X.

    2010-04-01

    The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm)2 using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.

  2. Positioning of quantum dots on metallic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, R K; Pholchai, N; Sorger, V J; Yim, T J; Oulton, R; Zhang, X, E-mail: xiang@berkeley.edu [NSF Nanoscale Science and Engineering Center, University of California, Berkeley, CA (United States)

    2010-04-09

    The capability to position individual emitters, such as quantum dots, near metallic nanostructures is highly desirable for constructing active optical devices that can manipulate light at the single photon level. The emergence of the field of plasmonics as a means to confine light now introduces a need for high precision and reliability in positioning any source of emission, which has thus far been elusive. Placing an emission source within the influence of plasmonic structures now requires accuracy approaching molecular length scales. In this paper we report the ability to reliably position nanoscale functional objects, specifically quantum dots, with sub-100-nm accuracy, which is several times smaller than the diffraction limit of a quantum dot's emission light. Electron beam lithography-defined masks on metallic surfaces and a series of surface chemical functionalization processes allow the programmed assembly of DNA-linked colloidal quantum dots. The quantum dots are successfully functionalized to areas as small as (100 nm){sup 2} using the specific binding of thiolated DNA to Au/Ag, and exploiting the streptavidin-biotin interaction. An analysis of the reproducibility of the process for various pattern sizes shows that this technique is potentially scalable to the single quantum dot level with 50 nm accuracy accompanied by a moderate reduction in yield.

  3. Quantum dots

    International Nuclear Information System (INIS)

    Kouwenhoven, L.; Marcus, C.

    1998-01-01

    Quantum dots are man-made ''droplets'' of charge that can contain anything from a single electron to a collection of several thousand. Their typical dimensions range from nanometres to a few microns, and their size, shape and interactions can be precisely controlled through the use of advanced nanofabrication technology. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. Indeed, quantum dots exemplify an important trend in condensed-matter physics in which researchers study man-made objects rather than real atoms or nuclei. As in an atom, the energy levels in a quantum dot become quantized due to the confinement of electrons. With quantum dots, however, an experimentalist can scan through the entire periodic table by simply changing a voltage. In this article the authors describe how quantum dots make it possible to explore new physics in regimes that cannot otherwise be accessed in the laboratory. (UK)

  4. Quantum Dots

    Science.gov (United States)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  5. Quantum dot behavior in transition metal dichalcogenides nanostructures

    Science.gov (United States)

    Luo, Gang; Zhang, Zhuo-Zhi; Li, Hai-Ou; Song, Xiang-Xiang; Deng, Guang-Wei; Cao, Gang; Xiao, Ming; Guo, Guo-Ping

    2017-08-01

    Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.

  6. Dynamics of plasmonic field polarization induced by quantum coherence in quantum dot-metallic nanoshell structures.

    Science.gov (United States)

    Sadeghi, S M

    2014-09-01

    When a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle interacts with a laser field, the plasmonic field of the metallic nanoparticle can be normalized by the quantum coherence generated in the quantum dot. In this Letter, we study the states of polarization of such a coherent-plasmonic field and demonstrate how these states can reveal unique aspects of the collective molecular properties of the hybrid system formed via coherent exciton-plasmon coupling. We show that transition between the molecular states of this system can lead to ultrafast polarization dynamics, including sudden reversal of the sense of variations of the plasmonic field and formation of circular and elliptical polarization.

  7. Optical response of a quantum dot-metal nanoparticle hybrid interacting with a weak probe field.

    Science.gov (United States)

    Kosionis, Spyridon G; Terzis, Andreas F; Sadeghi, Seyed M; Paspalakis, Emmanuel

    2013-01-30

    We study optical effects in a hybrid system composed of a semiconductor quantum dot and a spherical metal nanoparticle that interacts with a weak probe electromagnetic field. We use modified nonlinear density matrix equations for the description of the optical properties of the system and obtain a closed-form expression for the linear susceptibilities of the quantum dot, the metal nanoparticle, and the total system. We then investigate the dependence of the susceptibility on the interparticle distance as well as on the material parameters of the hybrid system. We find that the susceptibility of the quantum dot exhibits optical transparency for specific frequencies. In addition, we show that there is a range of frequencies of the applied field for which the susceptibility of the semiconductor quantum dot leads to gain. This suggests that in such a hybrid system quantum coherence can reverse the course of energy transfer, allowing flow of energy from the metallic nanoparticle to the quantum dot. We also explore the susceptibility of the metal nanoparticle and show that it is strongly influenced by the presence of the quantum dot.

  8. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.

    Science.gov (United States)

    He, Yong; Zhu, Ka-Di

    2017-06-20

    In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  9. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

    Directory of Open Access Journals (Sweden)

    Yong He

    2017-06-01

    Full Text Available In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP and the excitons in semiconductor quantum dots (SQDs in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  10. The Study of Quantum Interference in Metallic Photonic Crystals Doped with Four-Level Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hatef Ali

    2010-01-01

    Full Text Available Abstract In this work, the absorption coefficient of a metallic photonic crystal doped with nanoparticles has been obtained using numerical simulation techniques. The effects of quantum interference and the concentration of doped particles on the absorption coefficient of the system have been investigated. The nanoparticles have been considered as semiconductor quantum dots which behave as a four-level quantum system and are driven by a single coherent laser field. The results show that changing the position of the photonic band gap about the resonant energy of the two lower levels directly affects the decay rate, and the system can be switched between transparent and opaque states if the probe laser field is tuned to the resonance frequency. These results provide an application for metallic nanostructures in the fabrication of new optical switches and photonic devices.

  11. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Nevedomskiy, V. N., E-mail: nevedom@mail.ioffe.ru; Bert, N. A.; Chaldyshev, V. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-12-15

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix.

  12. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2015-01-01

    A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix

  13. Robust tunable excitonic features in monolayer transition metal dichalcogenide quantum dots

    Science.gov (United States)

    Fouladi-Oskouei, J.; Shojaei, S.; Liu, Z.

    2018-04-01

    The effects of quantum confinement on excitons in parabolic quantum dots of monolayer transition metal dichalcogenides (TMDC QDs) are investigated within a massive Dirac fermion model. A giant spin-valley coupling of the TMDC QDs is obtained, larger than that of monolayer TMDC sheets and consistent with recent experimental measurements. The exciton transition energy and the binding energy are calculated, and it is found that the strong quantum confinement results in extremely high exciton binding energies. The enormously large exciton binding energy in TMDC QDs (({{E}{{B2D}}}∼ 500 meV)quantum confinements, leading to tunable quantum dots in monolayer TMDCs. This finding offers new functionality in engineering the interaction of a 2D material with light and creates promise for the quantum manipulation of spin and valley degrees of freedom in TMDC nanostructures, enabling versatile novel 2D quantum photonic and optoelectronic nanodevices.

  14. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  15. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra. Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dot states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...

  16. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    1999-01-01

    Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution...... of quantum dots, however, results in a large inhomogeneous broadening of quantum dot spectra.Work on self-assembled InGaAs/GaAs quantum dots will be presented. Properties of atom-like single-dots states are investigated optically using high spatial and spectral resolution. Single-dot spectra can be used...

  17. Photoinduced electron transfer from semiconductor quantum dots to metal oxide nanoparticles.

    Science.gov (United States)

    Tvrdy, Kevin; Frantsuzov, Pavel A; Kamat, Prashant V

    2011-01-04

    Quantum dot-metal oxide junctions are an integral part of next-generation solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO(2), TiO(2), and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO(2)) were not the same as those which showed the highest photocurrent (TiO(2)). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.

  18. Sensitivity to Heavy-Metal Ions of Unfolded Fullerene Quantum Dots

    Directory of Open Access Journals (Sweden)

    Erica Ciotta

    2017-11-01

    Full Text Available A novel type of graphene-like quantum dots, synthesized by oxidation and cage-opening of C60 buckminsterfullerene, has been studied as a fluorescent and absorptive probe for heavy-metal ions. The lattice structure of such unfolded fullerene quantum dots (UFQDs is distinct from that of graphene since it includes both carbon hexagons and pentagons. The basic optical properties, however, are similar to those of regular graphene oxide quantum dots. On the other hand, UFQDs behave quite differently in the presence of heavy-metal ions, in that multiple sensitivity to Cu2+, Pb2+ and As(III was observed through comparable quenching of the fluorescent emission and different variations of the transmittance spectrum. By dynamic light scattering measurements and transmission electron microscope (TEM images we confirmed, for the first time in metal sensing, that this response is due to multiple complexation and subsequent aggregation of UFQDs. Nonetheless, the explanation of the distinct behaviour of transmittance in the presence of As(III and the formation of precipitate with Pb2+ require further studies. These differences, however, also make it possible to discriminate between the three metal ions in view of the implementation of a selective multiple sensor.

  19. Probing the structural dependency of photoinduced properties of colloidal quantum dots using metal-oxide photo-active substrates

    Energy Technology Data Exchange (ETDEWEB)

    Patty, Kira; Campbell, Quinn; Hamilton, Nathan; West, Robert G. [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Nano and Micro Device Center, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2014-09-21

    We used photoactive substrates consisting of about 1 nm coating of a metal oxide on glass substrates to investigate the impact of the structures of colloidal quantum dots on their photophysical and photochemical properties. We showed during irradiation these substrates can interact uniquely with such quantum dots, inducing distinct forms of photo-induced processes when they have different cores, shells, or ligands. In particular, our results showed that for certain types of core-shell quantum dot structures an ultrathin layer of a metal oxide can reduce suppression of quantum efficiency of the quantum dots happening when they undergo extensive photo-oxidation. This suggests the possibility of shrinking the sizes of quantum dots without significant enhancement of their non-radiative decay rates. We show that such quantum dots are not influenced significantly by Coulomb blockade or photoionization, while those without a shell can undergo a large amount of photo-induced fluorescence enhancement via such blockade when they are in touch with the metal oxide.

  20. Optical Spectroscopy of Hybrid Semiconductor Quantum Dots and Metal Nanoparticles

    Science.gov (United States)

    2014-11-07

    vehicle head lights by replacing the filament bulbs for energy saving and lifetime, while the spectral purity is more important than the spectral...Dots for Hybrid Light Emitting Devices,” The 12th International Conference on Nano Science and Nano Technology, November 6-7, 2014, Mokpo, South Korea...of Personnel receiving masters degrees Names of personnel receiving PHDs Names of other research staff Inventions (DD882) Scientific Progress Please

  1. PREFACE: Quantum Dot 2010

    Science.gov (United States)

    Taylor, Robert A.

    2010-09-01

    These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

  2. Optical determination of vacuum Rabi splitting in a semiconductor quantum dot induced by a metal nanoparticle.

    Science.gov (United States)

    He, Yong; Jiang, Cheng; Chen, Bin; Li, Jin-Jin; Zhu, Ka-Di

    2012-07-15

    We propose a theoretical scheme to determine the vacuum Rabi splitting in a single semiconductor quantum dot (SQD) induced by a metal nanoparticle (MNP). Based on cavity quantum electrodynamics, the exciton-plasmon interaction between the SQD and the MNP is considered while a strong pump laser and a weak probe laser are simultaneously presented. By decreasing the distance between them, we can increase the coupling strength. At resonance, thanks to the strong coupling, a vacuum Rabi splitting can be observed clearly in the probe absorption spectrum. The coupling strength can be obtained by measuring the vacuum Rabi splitting. This strong coupling is significant for the investigation of surface-plasmon-based quantum information processing.

  3. Coherent confinement of plasmonic field in quantum dot-metallic nanoparticle molecules.

    Science.gov (United States)

    Sadeghi, S M; Hatef, A; Fortin-Deschenes, Simon; Meunier, Michel

    2013-05-24

    Interaction of a hybrid system consisting of a semiconductor quantum dot and a metallic nanoparticle (MNP) with a laser beam can replace the intrinsic plasmonic field of the MNP with a coherently normalized field (coherent-plasmonic or CP field). In this paper we show how quantum coherence effects in such a hybrid system can form a coherent barrier (quantum cage) that spatially confines the CP field. This allows us to coherently control the modal volume of this field, making it significantly smaller or larger than that of the intrinsic plasmonic field of the MNP. We investigate the spatial profiles of the CP field and discuss how the field barrier depends on the collective states of the hybrid system.

  4. Metallic nanoparticles and their medicinal potential. Part II: aluminosilicates, nanobiomagnets, quantum dots and cochleates.

    Science.gov (United States)

    Loomba, Leena; Scarabelli, Tiziano

    2013-09-01

    Metallic miniaturization techniques have taken metals to nanoscale size where they can display fascinating properties and their potential applications in medicine. In recent years, metal nanoparticles such as aluminium, silicon, iron, cadmium, selenium, indium and calcium, which find their presence in aluminosilicates, nanobiomagnets, quantum dots (Q-dots) and cochleates, have caught attention of medical industries. The increasing impact of metallic nanoparticles in life sciences has significantly advanced the production techniques for these nanoparticles. In this Review, the various methods for the synthesis of nanoparticles are outlined, followed by their physicochemical properties, some recent applications in wound healing, diagnostic imaging, biosensing, assay labeling, antimicrobial activity, cancer therapy and drug delivery are listed, and finally their toxicological impacts are revised. The first half of this article describes the medicinal uses of two noble nanoparticles - gold and silver. This Review provides further information on the ability of aluminum, silicon, iron, selenium, indium, calcium and zinc to be used as nanoparticles in biomedical sciences. Aluminosilicates find their utility in wound healing and antibacterial growth. Iron-oxide nanoparticles enhance the properties of MRI contrast agents and are also used as biomagnets. Cadmium, selenium, tellurium and indium form the core nanostructures of tiny Q-dots used in cellular assay labeling, high-resolution cell imaging and biosensing. Cochleates have the bivalent nano ions calcium, magnesium or zinc imbedded in their structures and are considered to be highly effective agents for drug and gene delivery. The aluminosilicates, nanobiomagnets, Q-dots and cochleates are discussed in the light of their properties, synthesis and utility.

  5. Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

    Science.gov (United States)

    Lien, Yu-Chung; Shieh, Jia-Min; Huang, Wen-Hsien; Tu, Cheng-Hui; Wang, Chieh; Shen, Chang-Hong; Dai, Bau-Tong; Pan, Ci-Ling; Hu, Chenming; Yang, Fu-Liang

    2012-04-01

    The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.

  6. Quantum Dots: Theory

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  7. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and

  8. A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2

    Science.gov (United States)

    Song, Xiang-Xiang; Liu, Di; Mosallanejad, Vahid; You, Jie; Han, Tian-Yi; Chen, Dian-Teng; Li, Hai-Ou; Cao, Gang; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

    2015-10-01

    Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2 with tunnel barriers defined by electric fields, therefore eliminating the edge states induced by etching steps, which commonly appear in gapless graphene QDs. Over 40 consecutive Coulomb diamonds with a charging energy of approximately 2 meV were observed, showing the formation of a QD, which is consistent with the simulations. The size of the QD could be tuned over a factor of 2 by changing the voltages applied to the top gates. These results shed light on a way to obtain smaller quantum dots on TMDCs with the same top gate geometry compared to traditional GaAs/AlGaAs heterostructures with further research.

  9. Synthesis of quantum dots

    Science.gov (United States)

    McDaniel, Hunter

    2017-10-17

    Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

  10. Transport in quantum dots

    International Nuclear Information System (INIS)

    Deus, Fernanda; Continetino, Mucio

    2011-01-01

    Full text. In this work we study the time dependent transport in interacting quantum dot. This is a zero-dimensional nano structure system which has quantized electronic states. In our purpose, we are interested in studying such system in a Coulomb blockade regime where a mean-field treatment of the electronic correlations are appropriate. The quantum dot is described by an Anderson type of Hamiltonian where the hybridization term arises from the contact with the leads. We consider a time dependence of both the energy of the localized state in the quantum dot and of the hybridization-like term. These time dependent parameters, under certain conditions, induce a current in the quantum dot even in the absence of difference on the chemical potential of the leads. The approach to this non-equilibrium problem requires the use of a Keldysh formalism. We calculate the non- equilibrium Green's functions and obtain results for the average (equilibrium term) and the non-equilibrium values of the electronic occupation number in the dot. we consider the possibility of a magnetic solution, with different values for the average up and down spins in the quantum dot. Our results allow to obtain, for instance, the tunneling current through the dot. The magnetic nature of the dot, for a certain range of parameters should give rise also to an induced spin current through the dot

  11. Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

    Science.gov (United States)

    Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

    2014-12-16

    Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

  12. Optical response of hybrid semiconductor quantum dot-metal nanoparticle system: Beyond the dipole approximation

    Science.gov (United States)

    Mohammadzadeh, Atefeh; Miri, MirFaez

    2018-01-01

    We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.

  13. Using metal complex-labeled peptides for charge transfer-based biosensing with semiconductor quantum dots

    Science.gov (United States)

    Medintz, Igor L.; Pons, Thomas; Trammell, Scott A.; Blanco-Canosa, Juan B.; Dawson, Philip E.; Mattoussi, Hedi

    2009-02-01

    Luminescent colloidal semiconductor quantum dots (QDs) have unique optical and photonic properties and are highly sensitive to charge transfer in their surrounding environment. In this study we used synthetic peptides as physical bridges between CdSe-ZnS core-shell QDs and some of the most common redox-active metal complexes to understand the charge transfer interactions between the metal complexes and QDs. We found that QD emission underwent quenching that was highly dependent on the choice of metal complex used. We also found that quenching traces the valence or number of metal complexes brought into close proximity of the nanocrystal surface. Monitoring of the QD absorption bleaching in the presence of the metal complex provided insight into the charge transfer mechanism. The data suggest that two distinct charge transfer mechanisms can take place. One directly to the QD core states for neutral capping ligands and a second to surface states for negatively charged capping ligands. A basic understanding of the proximity driven charge-transfer and quenching interactions allowed us to construct proteolytic enzyme sensing assemblies with the QD-peptide-metal complex conjugates.

  14. Carbon quantum dots and a method of making the same

    Science.gov (United States)

    Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

    2017-08-22

    The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

  15. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  16. The inhibition of optical excitations and enhancement of Rabi flopping in hybrid quantum dot-metallic nanoparticle systems

    International Nuclear Information System (INIS)

    Sadeghi, S M

    2009-01-01

    We study the inhibition of optical excitation and enhancement of Rabi flopping and frequency in semiconductor quantum dots via plasmonic effects. This is done by demonstrating that the interaction of a quantum dot with a laser field in the vicinity of a metallic nanoparticle can be described in terms of optical Bloch equations with a plasmically normalized Rabi frequency. We show that in the weak-field regime plasmonic effects can suppress the interband transitions, inhibiting exciton generation. In the strong-field regime these effects delay the response of the quantum dot to the laser field and enhance Rabi flopping. We relate these to the conversion of Rabi frequency from a real quantity into a complex and strongly frequency-dependent quantity as plasmonic effects become significant. We show that, within the strong-field regime, in the wavelength range where real and imaginary parts of this frequency reach their maxima, a strongly frequency-dependent enhancement of carrier excitation can happen.

  17. Quantum dot molecules

    CERN Document Server

    Wu, Jiang

    2014-01-01

    This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.

  18. Graphene quantum dots

    CERN Document Server

    Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

    2014-01-01

    This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

  19. Energy transfer from quantum dots to metal-organic frameworks for enhanced light harvesting.

    Science.gov (United States)

    Jin, Shengye; Son, Ho-Jin; Farha, Omar K; Wiederrecht, Gary P; Hupp, Joseph T

    2013-01-23

    Because of their efficient energy-transport properties, porphyrin-based metal-organic frameworks (MOFs) are attractive compounds for solar photochemistry applications. However, their absorption bands provide limited coverage in the visible spectral range for light-harvesting applications. We report here the functionalization of porphyrin-based MOFs with CdSe/ZnS core/shell quantum dots (QDs) for the enhancement of light harvesting via energy transfer from the QDs to the MOFs. The broad absorption band of the QDs in the visible region offers greater coverage of the solar spectrum by QD-MOF hybrid structures. We show through time-resolved emission studies that photoexcitation of the QDs is followed by energy transfer to the MOFs with efficiencies of more than 80%. This sensitization approach can result in a >50% increase in the number of photons harvested by a single monolayer MOF structure with a monolayer of QDs on the surface of the MOF.

  20. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    Energy Technology Data Exchange (ETDEWEB)

    Wing, Waylin J.; Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu; Gutha, Rithvik R.; Campbell, Quinn [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  1. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  2. Quantum optics with single quantum dot devices

    International Nuclear Information System (INIS)

    Zwiller, Valery; Aichele, Thomas; Benson, Oliver

    2004-01-01

    A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots

  3. FeS-Quantum-Dot Sensitized Metal Oxide Photoelectrodes: Photoelectrochemistry and Photoinduced Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Idriss Bedja

    2011-01-01

    Full Text Available TiO2, ZnO nanoparticulate(-np, and ZnO-nanorod(-nr electrodes have been modified with FeS2 (pyrite nanoparticles. Quantum size effect is manifested by a blue shift in both absorption and photocurrent action spectra. PIA (photoinduced absorption spectroscopy, a multipurpose tool in the study of dye-sensitized solar cells, is used to study quantum-dot modified metal oxide (MO nanostructured electrodes. The PIA spectra showed an evidence for long-lived photoinduced charge separation. Time-resolved PIA showed that recombination between electrons and holes occurs on a millisecond timescale. Incident-photon-to-current efficiencies at 400 nm are ranged between 13% and 25%. The better solar cell performance of FeS2 on ZnO-nr over ZnO-np can be ascribed to the faster, unidirectional e-transport channels through the ZnO-nr as well as the longer electron lifetimes. The lower performances of electrodes can be explained by the presence of FeS2 phases other than the photoactive pyrite phase, as evidenced from XRD study.

  4. Quantum Dot Spectrometer (GSFC IRAD)

    Data.gov (United States)

    National Aeronautics and Space Administration — We are developing an ultra-compact, low mass, low-cost, yet high resolution, multispectral imager based on an innovative quantum dot array concept. The quantum dot...

  5. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit

    2016-12-05

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  6. Quantum Dot Sensitized Solar Cells Based on Ternary Metal Oxide Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenyong [Univ. of Wyoming, Laramie, WY (United States); Tang, Jinke [Univ. of Wyoming, Laramie, WY (United States); Dahnovsky, Yuri [Univ. of Wyoming, Laramie, WY (United States); Pikal, Jon M [Univ. of Wyoming, Laramie, WY (United States); Chien, TeYu [Univ. of Wyoming, Laramie, WY (United States)

    2017-11-03

    In Phase I of this project we investigate quantum dot sensitized solar cells (QDSSCs) based on ternary metal oxide nanowires and study the physical and chemical mechanisms that govern device operation. Our research has the following five objectives: (1) synthesis of ternary metal oxide nanowires, (2) synthesis of QDs and exploration of non-solution based QD deposition methods, (3) physical and electro-optical characterizations of fabricated solar devices, (4) device modeling and first-principle theoretical study of transport physics, and (5) investigation of long-term stability issues of QD sensitized solar cells. In Phase II of this project our first major research goal is to investigate magnetically doped quantum dots and related spin polarization effect, which could improve light absorption and suppress electron relaxation in the QDs. We will utilize both physical and chemical methods to synthesize these doped QDs. We will also study magnetically modified nanowires and introduce spin-polarized transport into QDSSCs, and inspect its impact on forward electron injection and back electron transfer processes. Our second goal is to study novel solid-state electrolytes for QDSSCs. Specifically, we will inspect a new type of polymer electrolytes based on a modified polysulfide redox couple, and examine the effect of their electrical properties on QDSSC performance. These solid-state electrolytes could also be used as filler materials for in situ sample fracturing in STM and enable cross-sectional interface examination of QD/nanowire structures. Our third research goal is to examine the interfacial properties such as energy level alignment at QD/nanowire interfaces using the newly developed Cross-sectional Scanning Tunneling Microscopy and Spectroscopy technique for non-cleavable materials. This technique allows a direct probing of band structures and alignment at device interfaces, which could generate important insight into the mechanisms that govern QDSSC operation

  7. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  8. Carbon nanotube quantum dots

    NARCIS (Netherlands)

    Sapmaz, S.

    2006-01-01

    Low temperature electron transport measurements on individual single wall carbon nanotubes are described in this thesis. Carbon nanotubes are small hollow cylinders made entirely out of carbon atoms. At low temperatures (below ~10 K) finite length nanotubes form quantum dots. Because of its small

  9. Directed self-assembly of metal oxide quantum dots: Copper oxide on strontium titanium trioxide

    Science.gov (United States)

    Du, Yingge

    2007-12-01

    /reactivity changes appear unlikely to be primary motivators of directed self-assembly. Low dose implant patterning created local depressions on the surface. This pit shape topography appears to be a strong contributor to the preferred nucleation within the pits, as the sidewalls of those surface pits could contain a high density of surface steps, which are known to decrease the adatom diffusion length and act as sinks to absorb the diffusing species. To further interpret the low dose implant results, calculations of total free-energy changes have been performed to study the differences between nucleation on a flat substrate surface and nucleation within a surface pit. This analysis shows that nucleation within a pit is almost always energetically favorable. In some special cases, assuming the pits have an inverted pyramidal shape, calculations show that island formation within the pits lowers the system total free-energy from the beginning of growth, i.e. there is no critical radius or energy barrier before a stable nucleus can be formed. The major geometric difference between high and low dose implantation area was revealed by AFM studies, which showed that pits generated by high implantation dose were still rounded after annealing and before growth, while pits from lower doses patterning had developed square edges oriented along the directions of the substrate. These geometric differences suggest differences in crystalline or strain/stress states, either/both of which could have caused the subsequent different island growth characteristics. Continued study of directed self-assembly of metal oxide quantum dots should lead to better understanding of the creation of well ordered, precisely controlled, high density QD arrays, ultimately contributing to the development of next generation nanoelectronic, magnetic, and optical devices.

  10. Multiplexed electrochemical immunoassay of biomarkers using metal sulfide quantum dot nanolabels and trifunctionalized magnetic beads.

    Science.gov (United States)

    Tang, Dianping; Hou, Li; Niessner, Reinhard; Xu, Mingdi; Gao, Zhuangqiang; Knopp, Dietmar

    2013-08-15

    A novel multiplexed stripping voltammetric immunoassay protocol was designed for the simultaneous detection of multiple biomarkers (CA 125, CA 15-3, and CA 19-9 used as models) using PAMAM dendrimer-metal sulfide quantum dot (QD) nanolabels as distinguishable signal tags and trifunctionalized magnetic beads as an immunosensing probe. The probe was prepared by means of co-immobilization of primary monoclonal anti-CA 125, anti-CA 15-3 and anti-CA 19-9 antibodies on a single magnetic bead. The PAMAM dendrimer-metal sulfide QD nanolabels containing CdS, ZnS and PbS were synthesized by using in situ synthesis method, which were utilized for the labeling of polyclonal rabbit anti-CA 125, anti-CA 15-3 and anti-CA 19-9 detection antibodies, respectively. A sandwich-type immunoassay format was adopted for the simultaneous determination of target biomarkers in a low-binding microtiter plate. The subsequent anodic stripping voltammetric analysis of cadmium, zinc, and lead components released by acid from the corresponding QD nanolabels was conducted at an in situ prepared mercury film electrode based on the difference of peak potentials. Experimental results indicated that the multiplexed immunoassay enabled the simultaneous detection of three cancer biomarkers in a single run with wide dynamic ranges of 0.01-50 U mL(-1) and detection limits (LODs) of 0.005 U mL(-1). Intra-assay and inter-assay coefficients of variation (CVs) were less than 7.2% and 10.4%, respectively. No significant differences at the 0.05 significance level were encountered in the analysis of 10 clinical serum specimens between the multiplexed immunoassay and a commercially available enzyme-linked immunosorbent assay (ELISA). Copyright © 2013 Elsevier B.V. All rights reserved.

  11. Synthetic Developments of Nontoxic Quantum Dots.

    Science.gov (United States)

    Das, Adita; Snee, Preston T

    2016-03-03

    Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Giant photocurrent enhancement by transition metal doping in quantum dot sensitized solar cells

    Science.gov (United States)

    Rimal, Gaurab; Pimachev, Artem K.; Yost, Andrew J.; Poudyal, Uma; Maloney, Scott; Wang, Wenyong; Chien, TeYu; Dahnovsky, Yuri; Tang, Jinke

    2016-09-01

    A huge enhancement in the incident photon-to-current efficiency of PbS quantum dot (QD) sensitized solar cells by manganese doping is observed. In the presence of Mn dopants with relatively small concentration (4 at. %), the photoelectric current increases by an average of 300% (up to 700%). This effect cannot be explained by the light absorption mechanism because both the experimental and theoretical absorption spectra demonstrate several times decreases in the absorption coefficient. To explain such dramatic increase in the photocurrent we propose the electron tunneling mechanism from the LUMO of the QD excited state to the Zn2SnO4 (ZTO) semiconductor photoanode. This change is due to the presence of the Mn instead of Pb atom at the QD/ZTO interface. The ab initio calculations confirm this mechanism. This work proposes an alternative route for a significant improvement of the efficiency for quantum dot sensitized solar cells.

  13. Giant photocurrent enhancement by transition metal doping in quantum dot sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rimal, Gaurab; Pimachev, Artem K.; Yost, Andrew J.; Poudyal, Uma; Maloney, Scott; Wang, Wenyong; Chien, TeYu; Dahnovsky, Yuri, E-mail: yurid@uwyo.edu, E-mail: jtang2@uwyo.edu; Tang, Jinke, E-mail: yurid@uwyo.edu, E-mail: jtang2@uwyo.edu [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States)

    2016-09-05

    A huge enhancement in the incident photon-to-current efficiency of PbS quantum dot (QD) sensitized solar cells by manganese doping is observed. In the presence of Mn dopants with relatively small concentration (4 at. %), the photoelectric current increases by an average of 300% (up to 700%). This effect cannot be explained by the light absorption mechanism because both the experimental and theoretical absorption spectra demonstrate several times decreases in the absorption coefficient. To explain such dramatic increase in the photocurrent we propose the electron tunneling mechanism from the LUMO of the QD excited state to the Zn{sub 2}SnO{sub 4} (ZTO) semiconductor photoanode. This change is due to the presence of the Mn instead of Pb atom at the QD/ZTO interface. The ab initio calculations confirm this mechanism. This work proposes an alternative route for a significant improvement of the efficiency for quantum dot sensitized solar cells.

  14. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  15. Quantum dots for quantum information technologies

    CERN Document Server

    2017-01-01

    This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

  16. Quantum Dots in Liquid Scintillator

    Science.gov (United States)

    Gooding, Diana

    2017-09-01

    Quantum dots are semiconducting crystals with dimensions on the order of nanometers. Due to quantum confinement, their size gives rise to optical properties that resemble those of single atoms, rather than bulk material. One of these is their absorption of light shorter than a characteristic wavelength and reemission in a narrow peak around that wavelength. This unique photoluminescence makes quantum dots ideal wavelength shifters. Moreover, their chemistry provides a straight-forward method to suspend heavy elements in organic scintillators. The NuDot collaboration has been pursuing a variety of new quantum dots, and a review of the current results will be presented.

  17. Formation of plasmon pulses in the cooperative decay of excitons of quantum dots near a metal surface

    Energy Technology Data Exchange (ETDEWEB)

    Shesterikov, A. B.; Gubin, M. Yu. [Vladimir State University (Russian Federation); Gladush, M. G. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Prokhorov, A. V., E-mail: avprokhorov33@mail.ru [Vladimir State University (Russian Federation)

    2017-01-15

    The formation of pulses of surface electromagnetic waves at a metal–dielectric boundary is considered in the process of cooperative decay of excitons of quantum dots distributed near a metal surface in a dielectric layer. It is shown that the efficiency of exciton energy transfer to excited plasmons can, in principle, be increased by selecting the dielectric material with specified values of the complex permittivity. It is found that in the mean field approximation, the semiclassical model of formation of plasmon pulses in the system under study is reduced to the pendulum equation with the additional term of nonlinear losses.

  18. Luminance enhancement in quantum dot light-emitting diodes fabricated with Field’s metal as the cathode

    Science.gov (United States)

    Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.

    2017-03-01

    This work reports the fabrication and characterization of blue-green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1-x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.

  19. Ex Situ Formation of Metal Selenide Quantum Dots Using Bacterially Derived Selenide Precursors

    Energy Technology Data Exchange (ETDEWEB)

    Fellowes, Jonathan W.; Pattrick, Richard; Lloyd, Jon; Charnock, John M.; Coker, Victoria S.; Mosselmans, JFW; Weng, Tsu-Chien; Pearce, Carolyn I.

    2013-04-12

    Luminescent quantum dots were synthesized using bacterially derived selenide (SeII-) as the precursor. Biogenic SeII- was produced by the reduction of Se-IV by Veillonella atypica and compared directly against borohydride-reduced Se-IV for the production of glutathione-stabilized CdSe and beta-mercaptoethanol-stabilized ZnSe nanoparticles by aqueous synthesis. Biological SeII- formed smaller, narrower size distributed QDs under the same conditions. The growth kinetics of biologically sourced CdSe phases were slower. The proteins isolated from filter sterilized biogenic SeII- included a methylmalonyl-CoA decarboxylase previously characterized in the closely related Veillonella parvula. XAS analysis of the glutathione-capped CdSe at the S K-edge suggested that sulfur from the glutathione was structurally incorporated within the CdSe. A novel synchrotron based XAS technique was also developed to follow the nucleation of biological and inorganic selenide phases, and showed that biogenic SeII- is more stable and more resistant to beam-induced oxidative damage than its inorganic counterpart. The bacterial production of quantum dot precursors offers an alternative, 'green' synthesis technique that negates the requirement of expensive, toxic chemicals and suggests a possible link to the exploitation of selenium contaminated waste streams.

  20. Ex situ formation of metal selenide quantum dots using bacterially derived selenide precursors

    International Nuclear Information System (INIS)

    Fellowes, J W; Pattrick, R A D; Lloyd, J R; Charnock, J M; Coker, V S; Mosselmans, J F W; Weng, T-C; Pearce, C I

    2013-01-01

    Luminescent quantum dots were synthesized using bacterially derived selenide (Se II− ) as the precursor. Biogenic Se II− was produced by the reduction of Se IV by Veillonella atypica and compared directly against borohydride-reduced Se IV for the production of glutathione-stabilized CdSe and β-mercaptoethanol-stabilized ZnSe nanoparticles by aqueous synthesis. Biological Se II− formed smaller, narrower size distributed QDs under the same conditions. The growth kinetics of biologically sourced CdSe phases were slower. The proteins isolated from filter sterilized biogenic Se II− included a methylmalonyl-CoA decarboxylase previously characterized in the closely related Veillonella parvula. XAS analysis of the glutathione-capped CdSe at the S K-edge suggested that sulfur from the glutathione was structurally incorporated within the CdSe. A novel synchrotron based XAS technique was also developed to follow the nucleation of biological and inorganic selenide phases, and showed that biogenic Se II− is more stable and more resistant to beam-induced oxidative damage than its inorganic counterpart. The bacterial production of quantum dot precursors offers an alternative, ‘green’ synthesis technique that negates the requirement of expensive, toxic chemicals and suggests a possible link to the exploitation of selenium contaminated waste streams. (paper)

  1. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  2. Quadra-Quantum Dots and Related Patterns of Quantum Dot Molecules: Basic Nanostructures for Quantum Dot Cellular Automata Application

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.

  3. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    Energy Technology Data Exchange (ETDEWEB)

    Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)

    2016-05-16

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  4. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    International Nuclear Information System (INIS)

    Betz, A. C.; Broström, M.; Gonzalez-Zalba, M. F.; Tagliaferri, M. L. V.; Vinet, M.; Sanquer, M.; Ferguson, A. J.

    2016-01-01

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  5. Plasmon-enhanced second harmonic generation in semiconductor quantum dots close to metal nanoparticles

    Directory of Open Access Journals (Sweden)

    Andrea V. Bragas

    2011-03-01

    Full Text Available We report the enhancement of the optical second harmonic signal in non-centrosymmetric semiconductor CdS quantum dots, when they are placed in close contact with isolated silver nanoparticles. The intensity enhancement is about 1000. We also show that the enhancement increases when the incoming laser frequency $omega$ is tuned toward the spectral position of the silver plasmon at $2omega$, proving that the silver nanoparticle modifies the nonlinear emission.Received: 8 March 2011, Accepted: 30 May 2011; Edited by: L. Viña; Reviewed by: R. Gordon, Department of Electrical and Computer Engineering, University of Victoria, British Columbia, Canada; DOI: 10.4279/PIP.030002Cite as: P. M. Jais, C. von Bilderling, A. V. Bragas, Papers in Physics 3, 030002 (2011

  6. Graphene quantum dot hybrids as efficient metal-free electrocatalyst for the oxygen reduction reaction.

    Science.gov (United States)

    Liu, Yong; Wu, Peiyi

    2013-04-24

    The doping of heteroatoms into graphene quantum dot nanostructures provides an efficient way to tune the electronic structures and make more active sites for electro-catalysis, photovoltaic, or light emitting applications. Other than the modification of chemical composition, novel architecture is very desirable to enrich the research area and provides a wide range of choices for the diverse applications. Herein, we show a novel lotus seedpod surface-like pattern of zero-dimension (0D) seed-like N-GODs of ca.3 nm embedded on the surface of a two-dimension (2D) N-GQD sheet of ca.35 nm. It is demonstrated that different photoluminescence (PL) could be tuned easily, and the novel multidimensional structure displays excellent performance toward oxygen reduction reaction in alkaline solutions. Thus, the fabricated N-GQD hybrids show bright perspective in biomedical imaging, biosensors, and conversion and storage of energy.

  7. Quantum size effect and thermal stability of carbon-nanotube-based quantum dot

    International Nuclear Information System (INIS)

    Huang, N.Y.; Peng, J.; Liang, S.D.; Li, Z.B.; Xu, N.S.

    2004-01-01

    Full text: Based on semi-experience quantum chemical calculation, we have investigated the quantum size effect and thermal stability of open-end carbon nanotube (5, 5) quantum dots of 20 to 400 atoms. It was found that there is a gap in the energy band of all carbon nanotube (5, 5) quantum dots although a (5, 5) carbon nanotube is metallic. The energy gap of quantum dots is much dependent of the number of atoms in a dot, as a result of the quantization rules imposed by the finite scales in both radial and axial directions of a carbon nanotube quantum dot. Also, the heat of formation of carbon nanotube quantum dots is dependent of the size of a quantum dot. (author)

  8. Towards Ideal Quantum Dots

    Directory of Open Access Journals (Sweden)

    Vyacheslav A. Elyukhin

    2013-01-01

    Full Text Available Arrays of single photon emitters with the same energy of luminescence are necessary for the development of quantum imformation technology. The studied epitaxial quantum dots have an undresired inhomogeneity of luminescence. Here, AxB1-xCyD1-y alloys of AC, AD, BC and BD compounds are presented as semiconductors in which non-random distribution of cations and anions may result in self-assembling of identical tetrahedral clusters. It can be due to the preference of AC and BD bonding over AD and BC one, a decrease of the strain energy or both of them. The self-assembling conditions of 1P4Ga clusters in AlN-rich AlxGa1-xPyN1-y alloys with Ga and phosphorus contents in the dilute and ultra dilute limits, correspondingly, are represented. All phosphorus atoms should be in 1P4Ga clusters at ~1000 oC if the Ga content reaches several percents. AlN-rich AlxGa1-xPyN1-y alloys with 1P4Ga clusters are promising semiconductors for fabrication of arrays of identical single photon emitters with the same energy of luminescence

  9. Quantum dots in photonic crystals for integrated quantum photonics

    Science.gov (United States)

    Kim, Je-Hyung; Richardson, Christopher J. K.; Leavitt, Richard P.; Waks, Edo

    2017-08-01

    Integrated quantum photonic technologies hold a great promise for application in quantum information processing. A major challenge is to integrate multiple single photon sources on a chip. Quantum dots are bright sources of high purity single photons, and photonic crystals can provide efficient photonic platforms for generating and manipulating single photons from integrated quantum dots. However, integrating multiple quantum dots with photonic crystal devices still remains as a challenging task due to the spectral randomness of the emitters. Here, we present the integration of multiple quantum dots with individual photonic crystal cavities and report quantum interference from chip-integrated multiple quantum dots. To solve the problem of spectral randomness, we introduce local engineering techniques for tuning multiple quantum dots and cavities. From integrated quantum dot devices we observe indistinguishable nature of single photons from individual quantum dots on the same chip. Therefore, our approach paves the way for large-scale quantum photonics with integrated quantum emitters.

  10. Thermoelectric transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Lukas Heinrich

    2016-06-30

    dots. Furthermore the model could be used to qualitatively describe and predict the behavior of the thermopower of CeCu{sub 6-x}Au{sub x} in a magnetic field. Motivated by the large thermopower realized in a negative-U Anderson model, a generalized Anderson impurity model with screening to the leads was introduced and investigated with the NRG. A two-channel NRG code needed to be developed, since the decoupling of the odd parity channel is no longer valid in the presence of a screening term. Sufficiently large screening terms can make the Coulomb interaction negative (at particle-hole symmetry), thereby enhancing the thermopower by the negative-U effect. Experimentally, screening interactions are always expected to be present and may be particularly important in molecular quantum dots,where the leads are metallic. We showed the effect of the conductance electron screening term at T=0 on the conductance and on the local occupation number as well as the charge and spin susceptibility. These results verify functional renormalization group results for these quantities within their range of validity, i.e. for small Coulomb interactions and screening interactions, but go beyond these since they allow investigating quantitatively also in the non perturbative limit. It is shown that for strong screening interaction (relative to the local Coulomb repulsion) the physics is consistent (at particle-hole symmetry) with a charge Kondo effect.

  11. From quantum dots to quantum circuits

    International Nuclear Information System (INIS)

    Ensslin, K.

    2008-01-01

    Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse

  12. High reduction of interfacial charge recombination in colloidal quantum dot solar cells by metal oxide surface passivation.

    Science.gov (United States)

    Chang, Jin; Kuga, Yuki; Mora-Seró, Iván; Toyoda, Taro; Ogomi, Yuhei; Hayase, Shuzi; Bisquert, Juan; Shen, Qing

    2015-03-12

    Bulk heterojunction (BHJ) solar cells based on colloidal QDs and metal oxide nanowires (NWs) possess unique and outstanding advantages in enhancing light harvesting and charge collection in comparison to planar architectures. However, the high surface area of the NW structure often brings about a large amount of recombination (especially interfacial recombination) and limits the open-circuit voltage in BHJ solar cells. This problem is solved here by passivating the surface of the metal oxide component in PbS colloidal quantum dot solar cells (CQDSCs). By coating thin TiO2 layers onto ZnO-NW surfaces, the open-circuit voltage and power conversion efficiency have been improved by over 40% in PbS CQDSCs. Characterization by transient photovoltage decay and impedance spectroscopy indicated that the interfacial recombination was significantly reduced by the surface passivation strategy. An efficiency as high as 6.13% was achieved through the passivation approach and optimization for the length of the ZnO-NW arrays (device active area: 16 mm2). All solar cells were tested in air, and exhibited excellent air storage stability (without any performance decline over more than 130 days). This work highlights the significance of metal oxide passivation in achieving high performance BHJ solar cells. The charge recombination mechanism uncovered in this work could shed light on the further improvement of PbS CQDSCs and/or other types of solar cells.

  13. First principle study on interfacial energetic alignment and charge transfer in quantum dots functionalized via metal-organic dye

    Science.gov (United States)

    Cui, Peng

    Quantum dots (QDs) are promising materials for applications in solar energy conversion because of tunable band gap, multi-exciton generation, photon-upconversion, etc. One of the main challenges of increasing solar energy conversion is to extend the lifetime of photoexcited charge-carriers in conduction band, and one of the strategies is to functionalize QD with mediator molecules. Functionalizing QD with metal-organic dye serves as the additional channel of manipulating charge transfer - the key process increasing solar energy conversion. When metal-organic dye is attached to QD, the interfacial charge transfer direction as well as the rates are determined by a balance between the energetic alignment, QD-dye interaction as well as charge-carrier relaxation dynamics. In this dissertation, we explore the effect of dye functionalization on these elements. We change the metal ion, organic ligands as well as binding geometry of dye, size of QD, polarity of solvent, and use density functional theory to study their effects on energetic alignment. Embedding density functional calculation is used to study the dipole interaction between QD and dye providing additional controllability on charge transfer excitation. At last, we apply Tully surface hopping scheme in combining with density functional theory in time domain to study the charge-carrier relaxation dynamics and charge transfer across the heterogeneous interface in QD/dye nanocrystal composite.

  14. Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration

    Science.gov (United States)

    Kondo, A.; Yin, G.; Srinivasan, N.; Atarashi, D.; Sakai, E.; Miyauchi, M.

    2015-07-01

    Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O362- nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O362- nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O362- nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W5+ species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O362- nanosheet to form color centers. Further, the CdS QDs and Cs4W11O362- nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells

  15. Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.

  16. Interactions of core–shell quantum dots with metal resistant bacterium Cupriavidus metallidurans: Consequences for Cu and Pb removal

    International Nuclear Information System (INIS)

    Slaveykova, Vera I.; Pinheiro, José Paulo; Floriani, Magali; Garcia, Miguel

    2013-01-01

    Highlights: • QDs associate with C. metallidurans in time and concentration dependent manner. • 12.9 nm size QDs adhere to the bacterial surface and enter the periplasmic space. • QDs bound significantly Cu and Pb. • QDs increase Cu and Pb content in C. metallidurans during short term exposure. -- Abstract: In the present study we address the interactions of carboxyl-CdSe/ZnS core/shell quantum dots (QDs), as a model of water dispersible engineered nanoparticles, and metal resistant bacteria Cupriavidus metallidurans, largely used in metal decontamination. The results demonstrate that QDs with average hydrodynamic size of 12.9 nm adhere to C. metallidurans. The percentage of bacterial cells displaying QD-fluorescence increased proportionally with contact time and QD concentration in bacterial medium demonstrating the association of QDs with the metal resistant bacteria. No evidence of QD internalization into bacterial cytoplasm was found by transmission electron microscopy with energy dispersive X-ray spectrometry, however QD clusters of sizes between 20 and 50 nm were observed on the bacterial surface and in the bacterial periplasmic compartment; observations consistent with the losses of membrane integrity induced by QDs. The presence of 20 nM QDs induced about 2-fold increase in Cu and Pb uptake fluxes by C. metallidurans exposed to 500 nM Pb or Cu, respectively. Overall, the results of this work suggest that when present in mixture with Cu and Pb, low levels of QDs originating from possible incidental release or QD disposal could increase metal accumulation in metal resistant bacterium

  17. Interactions of core–shell quantum dots with metal resistant bacterium Cupriavidus metallidurans: Consequences for Cu and Pb removal

    Energy Technology Data Exchange (ETDEWEB)

    Slaveykova, Vera I., E-mail: vera.slaveykova@unige.ch [Environmental Biogeochemistry and Ecotoxicology, Institute F.-A. Forel, Earth and Environment Science, Faculty of Sciences, University of Geneva, 10, route de Suisse, 1290 Versoix (Switzerland); Pinheiro, José Paulo [IBB/CBME, Department of Chemistry and Biochemistry, University of the Algarve, Gambelas Campus, 8005-139 Faro (Portugal); Floriani, Magali [IRSN/DEI/SECRE/LRE CEA Cadarache, 13115 Saint-Paul-Lez-Durance (France); Garcia, Miguel [School of Life Sciences, Swiss Federal Institute of Technology (EPFL), Station 15, CH-1015 Lausanne (Switzerland)

    2013-10-15

    Highlights: • QDs associate with C. metallidurans in time and concentration dependent manner. • 12.9 nm size QDs adhere to the bacterial surface and enter the periplasmic space. • QDs bound significantly Cu and Pb. • QDs increase Cu and Pb content in C. metallidurans during short term exposure. -- Abstract: In the present study we address the interactions of carboxyl-CdSe/ZnS core/shell quantum dots (QDs), as a model of water dispersible engineered nanoparticles, and metal resistant bacteria Cupriavidus metallidurans, largely used in metal decontamination. The results demonstrate that QDs with average hydrodynamic size of 12.9 nm adhere to C. metallidurans. The percentage of bacterial cells displaying QD-fluorescence increased proportionally with contact time and QD concentration in bacterial medium demonstrating the association of QDs with the metal resistant bacteria. No evidence of QD internalization into bacterial cytoplasm was found by transmission electron microscopy with energy dispersive X-ray spectrometry, however QD clusters of sizes between 20 and 50 nm were observed on the bacterial surface and in the bacterial periplasmic compartment; observations consistent with the losses of membrane integrity induced by QDs. The presence of 20 nM QDs induced about 2-fold increase in Cu and Pb uptake fluxes by C. metallidurans exposed to 500 nM Pb or Cu, respectively. Overall, the results of this work suggest that when present in mixture with Cu and Pb, low levels of QDs originating from possible incidental release or QD disposal could increase metal accumulation in metal resistant bacterium.

  18. Large quantum dots with small oscillator strength

    DEFF Research Database (Denmark)

    Stobbe, Søren; Schlereth, T.W.; Höfling, S.

    2010-01-01

    We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....

  19. Growth of non-polar (11-20 InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

    Directory of Open Access Journals (Sweden)

    J. T. Griffiths

    2014-12-01

    Full Text Available Non-polar (11-20 InGaN quantum dots (QDs were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.

  20. Quantum-dot based photonic quantum networks

    Science.gov (United States)

    Lodahl, Peter

    2018-01-01

    Quantum dots (QDs) embedded in photonic nanostructures have in recent years proven to be a very powerful solid-state platform for quantum optics experiments. The combination of near-unity radiative coupling of a single QD to a photonic mode and the ability to eliminate decoherence processes imply that an unprecedent light-matter interface can be obtained. As a result, high-cooperativity photon-emitter quantum interfaces can be constructed opening a path-way to deterministic photonic quantum gates for quantum-information processing applications. In the present manuscript, I review current state-of-the-art on QD devices and their applications for quantum technology. The overarching long-term goal of the research field is to construct photonic quantum networks where remote entanglement can be distributed over long distances by photons.

  1. Electron correlations in quantum dots

    International Nuclear Information System (INIS)

    Tipton, Denver Leonard John

    2001-01-01

    Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining potential. In this so-called 'Wigner' regime the ground-state electronic charge density is localised near positions of classical electrostatic minima and the interacting electronic spectrum consists of well separated spin multiplets. In the strongly correlated regime the structure of low-energy multiplets is explained by mapping onto lattice models with extended-Hubbard and Heisenberg effective Hamiltonians. The parameters for these effective models are calculated within a Hartree approximation and are shown to reproduce well the exact results obtained by numerical diagonalisation of the full interacting Hamiltonian. Comparison is made between square dots and quantum rings with full rotational symmetry. In the very low-density regime, direct diagonalisation becomes impractical due to excessive computer time for convergence. In this regime a numerical renormalisation group method is applied to one-dimensional dots, enabling effective spin-interactions to be

  2. Transient current in a quantum dot asymmetrically coupled to metallic leads

    International Nuclear Information System (INIS)

    Goker, A; Friedman, B A; Nordlander, P

    2007-01-01

    The time-dependent non-crossing approximation is used to study the transient current in a single-electron transistor attached asymmetrically to two leads following a sudden change in the energy of the dot level. We show that for asymmetric coupling, sharp features in the density of states of the leads can induce oscillations in the current through the dot. These oscillations persist to much longer timescales than the timescale for charge fluctuations. The amplitude of the oscillations increases as the temperature or source-drain bias across the dot is reduced and saturates for values below the Kondo temperature. We discuss the microscopic origin of these oscillations and comment on the possibility for their experimental detection

  3. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  4. Spin storage in quantum dot ensembles and single quantum dots

    International Nuclear Information System (INIS)

    Heiss, Dominik

    2009-01-01

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

  5. Nuclear Spins in Quantum Dots

    NARCIS (Netherlands)

    Erlingsson, S.I.

    2003-01-01

    The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis,

  6. Polymer-coated quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Liu, Rongrong; Vancso, Gyula J.

    2013-01-01

    Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of

  7. Nonpeturbative cavity-QED between a single quantum dot and a metal nanoparticle

    DEFF Research Database (Denmark)

    Van Vlack, C.; Kristensen, Philip Trøst; Hughes, S.

    2012-01-01

    modes. The vacuum Rabi doublet becomes a rich spectral quartet with two of the four peaks anticrossing, and surviving in spite of significant non-radiative decays. We also discuss the role of optical quenching and highlight the importance of accounting for photon transport from the dot to the detector...

  8. Recent Advances in the Field of Bionanotechnology: An Insight into Optoelectric Bacteriorhodopsin, Quantum Dots, and Noble Metal Nanoclusters

    Directory of Open Access Journals (Sweden)

    Christopher Knoblauch

    2014-10-01

    Full Text Available Molecular sensors and molecular electronics are a major component of a recent research area known as bionanotechnology, which merges biology with nanotechnology. This new class of biosensors and bioelectronics has been a subject of intense research over the past decade and has found application in a wide variety of fields. The unique characteristics of these biomolecular transduction systems has been utilized in applications ranging from solar cells and single-electron transistors (SETs to fluorescent sensors capable of sensitive and selective detection of a wide variety of targets, both organic and inorganic. This review will discuss three major systems in the area of molecular sensors and electronics and their application in unique technological innovations. Firstly, the synthesis of optoelectric bacteriorhodopsin (bR and its application in the field of molecular sensors and electronics will be discussed. Next, this article will discuss recent advances in the synthesis and application of semiconductor quantum dots (QDs. Finally, this article will conclude with a review of the new and exciting field of noble metal nanoclusters and their application in the creation of a new class of fluorescent sensors.

  9. Graphene/zinc aluminum mixed metal oxides photo anode for CdS quantum dot-sensitized solar cell

    Science.gov (United States)

    Cao, Jiupeng; Zhu, Yatong; Yang, Xiaoyu; Liu, Sha; Liu, Dong; Tang, Xiaoyan; Xiao, Hongdi; Hou, Wanguo; Qi, Genggeng; Liu, Jianqiang

    2017-04-01

    In this study, graphene was used to enhance the photovoltaic performance of the CdS quantum dot-sensitized solar cells (QDSSCs). The zinc aluminum mixed metal oxides (MMO) obtained from layered double hydroxide (LDH) precursor and the graphene/MMO hybrid materials were used as photoanode of the CdS QDSSCs, respectively. Raman spectroscopy, x-ray diffraction (XRD) and energy-dispersive x-ray spectroscopy (EDS) confirmed the existence of graphene in the photoanodes. The incorporated graphene influenced the specific areas and improved the light harvesting, thus increasing the photogenerated electrons. The addition of graphene improves the power conversion efficiency (PCE) of the QDSSCs, and the highest PCE of the QDSSCs with graphene/Zn-Al MMO photoanode reached 0.18%. Electrochemical impedance measurements indicated that graphene helped to increase the electron transfer rate in the graphene/Zn-Al MMO photoanode and reduce the charge recombination rate. This work highlights that graphene can act as a fast pathway for photogenerated electrons.

  10. Coherent control of quantum dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher

    In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...... measurements the coherence time of the selfassembledquantum dots (QDs) has been reported to be limited by the spontaneousemission rate at cryogenic temperatures1.In this project we propose to alter the coherence time of QDs by taking advantage of arecent technique on modifying spontaneous emission rates...

  11. Spontaneous emission spectra and quantum light-matter interactions from a strongly coupled quantum dot metal-nanoparticle system

    DEFF Research Database (Denmark)

    Van Vlack, C.; Kristensen, Philip Trøst; Hughes, S.

    2012-01-01

    the dot to the detector, we demonstrate that the strong-coupling regime should be observable in the far-field spontaneous emission spectrum, even at room temperature. The vacuum-induced emission spectra show that the usual vacuum Rabi doublet becomes a rich spectral triplet or quartet with two of the four...

  12. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  13. Spin and edge channel dependent transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ridder, T; Rogge, M C; Haug, R J [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Appelstrasse 2, D-30167 Hannover (Germany)], E-mail: ridder@nano.uni-hannover.de

    2008-11-12

    We investigate the influence of spin polarized currents and non-equilibrated edge channels on the transport properties of a single quantum dot. Polarized currents are realized by the manual depletion of edge channels in high magnetic fields via a metallic top gate covering the source contact in the system. We observe a suppression and enhancement in the conductance of the quantum dot dependent on the edge channel configuration in the leads.

  14. Ultrasmall colloidal PbS quantum dots

    International Nuclear Information System (INIS)

    Reilly, Nick; Wehrung, Michael; O'Dell, Ryan Andrew; Sun, Liangfeng

    2014-01-01

    Ultrasmall colloidal lead sulfide quantum dots can increase the open circuit voltages of quantum-dot-based solar cells because of their large energy gap. Their small size and visible or near infrared light-emitting property make them attractive to the applications of biological fluorescence labeling. Through a modified organometallic route, we can synthesize lead sulfide quantum dots as small as 1.6 nm in diameter. The low reaction temperature and the addition of a chloroalkane cosolvent decrease the reaction rate, making it possible to obtain the ultrasmall quantum dots. - Highlights: • Ultrasmall colloidal PbS quantum dots as small as 1.6 nm in diameter are synthesized. • The quantum dots emit red light with photoluminescence peak at 760 nm. • The growth temperature is as low as 50 °C. • Addition of cosolvent 1,2-dichloroethane in the reaction decreases the reaction rate

  15. Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

    International Nuclear Information System (INIS)

    You, Jie; Li, Hai-Ou; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping

    2015-01-01

    To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction

  16. Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

    National Research Council Canada - National Science Library

    Raymer, Michael

    2003-01-01

    An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

  17. Quantum optics with quantum dots in photonic nanowires

    DEFF Research Database (Denmark)

    We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....

  18. Millimeter Wave Modulators Using Quantum Dots

    National Research Council Canada - National Science Library

    Prather, Dennis W

    2008-01-01

    In this effort electro-optic modulators for millimeter wave sensing and imaging were developed and demonstrated via design, fabrication, and experimental characterization of multi layer quantum dot...

  19. Synergistically enhanced activity of graphene quantum dot/multi-walled carbon nanotube composites as metal-free catalysts for oxygen reduction reaction.

    Science.gov (United States)

    Zhou, Xuemei; Tian, Zhimin; Li, Jing; Ruan, Hong; Ma, Yuanyuan; Yang, Zhi; Qu, Yongquan

    2014-03-07

    Graphene quantum dots (GQDs), as metal-free carbon nanomaterials, have potential applications in electrochemical fields due to their strong chemical inertness, oxygen-rich functional groups and remarkable quantum confinement and edge effects. Herein, we demonstrate that a novel metal-free electrode composed of GQDs and multi-walled carbon nanotubes (MWCNTs) exhibits a significant synergistic effect on enhanced catalytic activity for oxygen reduction reaction (ORR). Compared to commercially available Pt/C catalysts, enhanced electrocatalytic activity, improved long-term stability and excellent resistance to crossover effect were observed for the novel composite electrode. Interestingly, the amount of GQDs introduced is found to have an apparent effect on the positions of the reduction peaks of the electrodes.

  20. Stark shifting two-electron quantum dot

    International Nuclear Information System (INIS)

    Dineykhan, M.; Zhaugasheva, S.A.; Duysebaeva, K.S.

    2003-01-01

    Advances in modern technology make it possible to create semiconducting nano-structures (quantum dot) in which a finite number of electrons are 'captured' in a bounded volume. A quantum dot is associated with a quantum well formed at the interface, between two finite-size semiconductors owing to different positions of the forbidden gaps on the energy scale in these semiconductors. The possibility of monitoring and controlling the properties of quantum dots attracts considerable attention to these objects, as a new elemental basis for future generations of computers. The quantum-mechanical effects and image potential play a significant role in the description of the formation mechanism quantum dot, and determined the confinement potential in a two-electron quantum dot only for the spherical symmetric case. In the present talk, we considered the formation dynamics of two-electron quantum dot with violation of spherical symmetry. So, we have standard Stark potential. The energy spectrum two-electron quantum dot were calculated. Usually Stark interactions determined the tunneling phenomena between quantum dots

  1. Hydrogenic impurity in double quantum dots

    International Nuclear Information System (INIS)

    Wang, X.F.

    2007-01-01

    The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

  2. Quantum Dot Devices for Optical Signal Processing

    DEFF Research Database (Denmark)

    Chen, Yaohui

    This thesis describes the physics and applications of quantum dot semiconductor optical ampliers through numerical simulations. As nano-structured materials with zero-dimensional quantum connement, semiconductor quantum dot material provides a number of unique physical properties compared...... with other semiconductor materials. The understanding of such properties is important in order to improve the performance of existing devices and to trigger the development of new semiconductor devices for dierent optical signal processing functionalities in the future. We present a detailed quantum dot...... semiconductor optical amplier model incorporating a carrier dynamics rate equation model for quantum dots with inhomogeneous broadening as well as equations describing propagation. A phenomenological description has been used to model the intradot electron scattering between discrete quantum dot states...

  3. Colloidal quantum dot photodetectors

    KAUST Repository

    Konstantatos, Gerasimos

    2011-05-01

    We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.

  4. Quantum bus of metal nanoring with surface plasmon polaritons

    International Nuclear Information System (INIS)

    Lin Zhirong; Guo Guoping; Tu Tao; Li Haiou; Zou Changling; Ren Xifeng; Guo Guangcan; Chen Junxue; Lu Yonghua

    2010-01-01

    We develop an architecture for distributed quantum computation using quantum bus of plasmonic circuits and spin qubits in self-assembled quantum dots. Deterministic quantum gates between two distant spin qubits can be reached by using an adiabatic approach in which quantum dots couple with highly detuned plasmon modes in a metallic nanoring. Plasmonic quantum bus offers a robust and scalable platform for quantum optics experiments and the development of on-chip quantum networks composed of various quantum nodes, such as quantum dots, molecules, and nanoparticles.

  5. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  6. Thick-shell nanocrystal quantum dots

    Science.gov (United States)

    Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  7. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 26; Issue 1. Many electron effects in ... Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, ... Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of ...

  8. Amphoteric CdSe nanocrystalline quantum dots.

    Science.gov (United States)

    Islam, Mohammad A

    2008-06-25

    The nanocrystal quantum dot (NQD) charge states strongly influence their electrical transport properties in photovoltaic and electroluminescent devices, optical gains in NQD lasers, and the stability of the dots in thin films. We report a unique electrostatic nature of CdSe NQDs, studied by electrophoretic methods. When we submerged a pair of metal electrodes, in a parallel plate capacitor configuration, into a dilute solution of CdSe NQDs in hexane, and applied a DC voltage across the pair, thin films of CdSe NQDs were deposited on both the positive and the negative electrodes. Extensive characterizations including scanning electron microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) and Raman studies revealed that the films on both the positive and the negative electrodes were identical in every respect, clearly indicating that: (1) a fraction (<1%) of the CdSe NQDs in free form in hexane solution are charged and, more importantly, (2) there are equal numbers of positive and negative CdSe NQDs in the hexane solution. Experiments also show that the number of deposited dots is at least an order of magnitude higher than the number of initially charged dots, indicating regeneration. We used simple thermodynamics to explain such amphoteric nature and the charging/regeneration of the CdSe NQDs.

  9. Solid-state cavity quantum electrodynamics using quantum dots

    International Nuclear Information System (INIS)

    Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

    2001-01-01

    We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

  10. Biocompatible Quantum Dots for Biological Applications

    Science.gov (United States)

    Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

  11. Magnon-driven quantum dot refrigerators

    International Nuclear Information System (INIS)

    Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan

    2015-01-01

    Highlights: • A three-terminal quantum dot refrigerator is proposed. • The effects of magnetic field, applied voltage, and polarization are considered. • The region that the system can work as a refrigerator is determined. • Two different magnon-driven quantum dot refrigerators are compared. - Abstract: A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.

  12. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex

    2012-07-29

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  13. Graphene quantum dots probed by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)

    2017-11-15

    Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Application of solution-processed metal oxide layers as charge transport layers for CdSe/ZnS quantum-dot LEDs.

    Science.gov (United States)

    Nguyen, Huu Tuan; Nguyen, Nang Dinh; Lee, Soonil

    2013-03-22

    We fabricated and characterized quantum-dot light emitting devices (QLEDs) that consisted of a CdSe/ZnS quantum-dot (QD) emitting layer, a hole-transporting nickel oxide (NiO) layer and/or an electron-transporting zinc oxide (ZnO) layer. Both the p-type NiO and n-type ZnO layers were formed by using sol-gel processes. All the fabricated CdSe/ZnS QLEDs showed similar electroluminescence spectra that originated from the green CdSe/ZnS QDs. However, different combinations of hole- and electron-transporting layers resulted in efficiency variations. In addition to the control of the respective concentrations of holes and electrons within a multilayer device structure, which determines the luminance and efficiency of QLEDs, the use of metal oxide layers is advantageous for long-term stability of QLEDs because they are air stable and can block the permeation of water vapor and oxygen in ambient air to a QD emitting layer. Moreover, the wet chemistry processing for their formation makes metal oxide layers attractive for low cost and/or large area manufacture of QLEDs.

  15. Quantum dot devices for optical communications

    DEFF Research Database (Denmark)

    Mørk, Jesper

    2005-01-01

    -low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record...

  16. Coherent optoelectronics with single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zrenner, A; Ester, P; Michaelis de Vasconcellos, S; Huebner, M C; Lackmann, L; Stufler, S [Universitaet Paderborn, Department Physik, Warburger Strasse 100, D-33098 Paderborn (Germany); Bichler, M [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany)], E-mail: zrenner@mail.upb.de

    2008-11-12

    The optical properties of semiconductor quantum dots are in many respects similar to those of atoms. Since quantum dots can be defined by state-of-the-art semiconductor technologies, they exhibit long-term stability and allow for well-controlled and efficient interactions with both optical and electrical fields. Resonant ps excitation of single quantum dot photodiodes leads to new classes of coherent optoelectronic functions and devices, which exhibit precise state preparation, phase-sensitive optical manipulations and the control of quantum states by electrical fields.

  17. Electron transport in quantum dots

    CERN Document Server

    2003-01-01

    When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...

  18. Quantum dots: lasers and amplifiers

    CERN Document Server

    Bimberg, D

    2003-01-01

    Continuous wave room-temperature output power of approx 3 W for edge emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mu m. Characteristic temperatures up to 170 K below 330 K are realized. Simultaneously, differential efficiency exceeds 80% for these devices. Lasers emitting up to 12 W at 1140-1160 nm are useful as pump sources for Tm sup 3 sup + -doped fibres for frequency up-conversion to 470 nm. Both types of lasers show transparency current densities of 6 A cm sup - sup 2 per dot layer, eta sub i sub n sub t = 98% and alpha sub i around 1.5 cm sup - sup 1. Long operation lifetimes (above 3000 h at 50 deg C heatsink temperature at 1.5 W CW) and improved radiation hardness as compared to quantum well (QW) devices are manifested. Cut-off frequencies of about 10 GHz at 1100 nm and 6 GHz at 1300 nm and low alpha factors resulting in reduced filamentation and improved M sup 2 values in single-mode operation are ...

  19. Synthesis of CdS nanoparticles quantum dots capped by 2,2′-dithiodibenzoic acid and study of its interaction with some transition metal ions

    International Nuclear Information System (INIS)

    Hosseini, Mohammad Saeid; Jahanbani, Hamideh

    2013-01-01

    In this work, CdS quantum dots (QDs) capped by 2,2′-dithiodibenzoic acid (DDBA) were prepared at one step. The size, shape, components and spectral properties of DDBA-capped-CdS QDs were characterized by transmission electron microscopy, infrared spectrometry and spectroflourometry. The results showed that the prepared QDs with an average diameter of 15 nm have a favorable fluorescence, which is highly affected by pH of the environment. Interaction of some heavy metal ions including Ag(I), Hg(II), Cu(II), Fe(II), Ni(II), pb(II), Mn(II), Zn(II) and Co(II) with DDBA-capped-CdS QDs was investigated at different buffering pH media. Based on the fluorescence quenching of the QDs in the presence of metal ion of interest, feasibility of their determinations were examined according to the Stern–Volmer equation. The investigations showed that Ag(I) ions can be determined in the presence of many co-existence metal ions at the buffering pH of 7. This method was then applied for Ag(I) measurement in some environmental samples, satisfactorily. -- Highlights: ► A new CdS quantum dot capped with 2,2′-dithiodibenzoic acid (DDBA) was prepared. ► The prepared QDs benefit from a favorable fluorescence. ► Interaction of some metal ions with the QDs was examined according to the Stern–Volmer equation. ► The determination of Ag(I) is feasible in the presence of many co-existence metal ions. ► The method benefits from high-speed and considerable simplicity for Ag(I) determination

  20. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

    Science.gov (United States)

    Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

    2017-09-01

    Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

  1. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots.

    Science.gov (United States)

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-08

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.

  2. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-04-23

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  3. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  4. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    International Nuclear Information System (INIS)

    Islam, Sk Masiul; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.; Mukherjee, Rabibrata

    2015-01-01

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO 2 and ZrO 2 , which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10 11 cm −2 , respectively. The device with a structure Metal/ZrO 2 /InAs QDs/HfO 2 /GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10 −6 A/cm 2 and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO 2 deposition

  5. Hyperbolic metamaterials based on quantum-dot plasmon-resonator nanocomposites

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Ozel, T.; Mutlugun, E.

    2014-01-01

    We theoretically demonstrate that nanocomposites made of colloidal semiconductor quantum dot monolayers placed between metal nanoparticle monolayers can function as multilayer hyperbolic metamaterials. Depending on the thickness of the spacer between the quantum dot and nanoparticle layers......, the effective permittivity tensor of the nanocomposite is shown to become indefinite, resulting in increased photonic density of states and strong enhancement of quantum dot luminescence. This explains the results of recent experiments [T. Ozel et al., ACS Nano 5, 1328 (2011)] and confirms that hyperbolic...

  6. Fabrication and characterization of coupled ensembles of epitaxial quantum dots and metal nanoparticles supporting localized surface plasmons

    Science.gov (United States)

    Kosarev, Alexander; Chaldyshev, Vladimir; Toropov, Nikita; Gladskikh, Igor; Gladskikh, Polina; Baryshnikova, Kseniia; Preobrazhenskiy, Valeriy; Putyato, Michael; Semyagin, Boris; Vartanyan, Tigran

    2017-08-01

    A stack of five layers of epitaxial InAs QDs with GaAs barriers was grown by molecular-beam epitaxy. The upper layer of QDs was capped by 3nm-GaAs/3nm-AlAs/4nm-GaAs layer sequence. Then, a thin silver layer was added via physical vapor deposition. After annealing isolated silver nanoparticles were formed above the layer of buried InAs quantum dots. We studied interplay of the exciton resonance in InAs QDs and plasmon resonance in Ag nanoparticles. In particular, we observed more than twofold enhancement of the exciton photoluminescence intensity from the InAs QDs when they were coupled to the silver nanoparticles.

  7. Recent advances in quantum dot surface chemistry.

    Science.gov (United States)

    Hines, Douglas A; Kamat, Prashant V

    2014-03-12

    Quantum dot (QD) surface chemistry is an emerging field in semiconductor nanocrystal related research. Along with size manipulation, the careful control of QD surface chemistry allows modulation of the optical properties of a QD suspension. Even a single molecule bound to the surface can introduce new functionalities. Herein, we summarize the recent advances in QD surface chemistry and the resulting effects on optical and electronic properties. Specifically, this review addresses three main issues: (i) how surface chemistry affects the optical properties of QDs, (ii) how it influences the excited state dynamics, and (iii) how one can manipulate surface chemistry to control the interactions between QDs and metal oxides, metal nanoparticles, and in self-assembled QD monolayers.

  8. Quantum walks in an array of quantum dots

    International Nuclear Information System (INIS)

    Manouchehri, K; Wang, J B

    2008-01-01

    Quantum random walks are shown to have non-intuitive dynamics, which makes them an attractive area of study for devising quantum algorithms for well-known classical problems as well as those arising in the field of quantum computing. In this work, we propose a novel scheme for the physical implementation of a discrete-time quantum random walk using laser excitations of the electronic states of an array of quantum dots. These dots represent the discrete nodes of the walk, while transitions between the energy levels inside each dot correspond to the required coin operation and stimulated Raman adiabatic passage (STIRAP) processes are employed to induce the steps of the walk. The quantum dot design is tailored in such a way as to enable selective coupling of the energy levels. Our simulation results show a close agreement with the ideal quantum walk distribution as well as modest robustness toward noise disturbance

  9. Electromagnetically induced transparency in quantum dot systems

    International Nuclear Information System (INIS)

    Jiang Yiwen; Zhu Kadi; Wu Zhuojie; Yuan Xiaozhong; Yao Ming

    2006-01-01

    Electromagnetically induced transparency (EIT) in quantum dot exciton systems in which the exciton behaves as a two-level system is investigated theoretically. It is shown that due to strong exciton-phonon coupling EIT can occur in such a quantum dot system and ultraslow light can propagate. The nonlinear optical absorption and Kerr coefficient based on EIT are also calculated. The numerical results show that giant nonlinear optical effects can be obtained while the frequency of the signal field differs only by an amount of LO phonon frequency from the exciton frequency in quantum dot systems

  10. Quantum Dots in Vertical Nanowire Devices

    NARCIS (Netherlands)

    Van Weert, M.

    2010-01-01

    The research described in this thesis is aimed at constructing a quantum interface between a single electron spin and a photon, using a nanowire quantum dot. Such a quantum interface enables information transfer from a local electron spin to the polarization of a photon for long distance readout.

  11. Entangled exciton states in quantum dot molecules

    Science.gov (United States)

    Bayer, Manfred

    2002-03-01

    Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

  12. Optical Fiber Sensing Using Quantum Dots

    Directory of Open Access Journals (Sweden)

    Faramarz Farahi

    2007-12-01

    Full Text Available Recent advances in the application of semiconductor nanocrystals, or quantumdots, as biochemical sensors are reviewed. Quantum dots have unique optical properties thatmake them promising alternatives to traditional dyes in many luminescence basedbioanalytical techniques. An overview of the more relevant progresses in the application ofquantum dots as biochemical probes is addressed. Special focus will be given toconfigurations where the sensing dots are incorporated in solid membranes and immobilizedin optical fibers or planar waveguide platforms.

  13. Electron Transport in Coupled Quantum Dots

    National Research Council Canada - National Science Library

    Antoniadis, D

    1998-01-01

    In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...

  14. Optical Studies of Single Quantum Dots

    National Research Council Canada - National Science Library

    Gammon, Daniel; Steel, Duncan G

    2002-01-01

    ...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...

  15. Ge Quantum Dot Infrared Imaging Camera Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  16. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

  17. Optoelectronic figure of merit of a metal nanoparticle—quantum dot (MNP-QD) hybrid molecule for assessing its suitability for sensing applications

    Science.gov (United States)

    Hapuarachchi, Harini; Mallawaarachchi, Sudaraka; Hattori, Haroldo T.; Zhu, Weiren; Premaratne, Malin

    2018-02-01

    Recently, many have studied various configurations of metal nanoparticle-quantum dot (MNP-QD) hybrid molecules based on different metals and tunable parameters. In this paper, we aim to incite the interest in using MNP-QD nanohybrids, which possess sensing capabilities superior to those of the individual constituents, for sensing applications that rely on scattered light. When assessing whether a given MNP-QD configuration is suited for an application, sometimes it is hard to assess the pros and cons of a given configuration against other candidates. Here we propose a simple, elegant relative figure of merit (RFoM), which focuses on maximizing the scattered intensity and the refractive index sensitivity of the nanohybrid, to rank the suitability of viable MNP-QD configurations for a particular sensing application. We use the proposed RFoM to analyse the optical spectra of noble, transition, post transition and alkali metal based MNP-QD nanohybrids using the representative metals Au, Ag, Cu, Al and Na, adopting a generalized nonlocal optical response (GNOR) method based cavity QED approach. Based on our observations, we suggest how the usage of MNP-QD nanohybrids could improve the conventionally studied tumour targeting applications. Moreover, we propose potential substitutes for noble metals conventionally considered for MNP-QD nanohybrids.

  18. Clocked quantum-dot cellular automata shift register

    Science.gov (United States)

    Orlov, Alexei O.; Kummamuru, Ravi; Ramasubramaniam, R.; Lent, Craig S.; Bernstein, Gary H.; Snider, Gregory L.

    2003-06-01

    The quantum-dot cellular automata (QCA) computational paradigm provides a means to achieve ultimately low limits of power dissipation by replacing binary coding in currents and voltages with single-electron switching within arrays of quantum dots ("cells"). Clocked control over the cells allows the realization of power gain, memory and pipelining in QCA circuits. We present an experimental demonstration of a clocked QCA two-stage shift register (SR) and use it to mimic the operation of a multi-stage SR. Error-bit rates for binary switching operations in a metal tunnel junction device are experimentally investigated, and discussed for future molecular QCAs.

  19. Submonolayer Quantum Dot Infrared Photodetector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  20. Electron Spin Dynamics in Semiconductor Quantum Dots

    International Nuclear Information System (INIS)

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-01-01

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  1. Electro-optical properties of phosphorene quantum dots

    Science.gov (United States)

    Saroka, V. A.; Lukyanchuk, I.; Portnoi, M. E.; Abdelsalam, H.

    2017-08-01

    We study the electronic and optical properties of single-layer phosphorene quantum dots with various shapes, sizes, and edge types (including disordered edges) subjected to an external electric field normal to the structure plane. Compared to graphene quantum dots, in phosphorene clusters of similar shape and size there is a set of edge states with energies dispersed at around the Fermi level. These states make the majority of phosphorene quantum dots metallic and enrich the phosphorene absorption gap with low-energy absorption peaks tunable by the electric field. The presence of the edge states dispersed around the Fermi level is a characteristic feature that is independent of the edge morphology and roughness.

  2. Gum Arabic Microgels As Template for In Situ Metal-Sulfide Based Quantum Dots Preparation and Their Thermal, Spectroscopic, Optical, and Magnetic Characterization

    Science.gov (United States)

    Farooq, Muhammad; Sagbas, Selin; Yildiz, Mustafa; Meral, Kadem; Siddiq, Mohammad; Aktas, Nahit; Sahiner, Nurettin

    2017-07-01

    Here, gum arabic (GA) microgel in 5-50 μm size range was used as a template for in situ quantum dot (QD) preparation. The in situ synthesis of metal sulfide quantum dots (QDs) such as CdS, PbS, CuS, ZnS, CoS, and MnS was accomplished by the absorption of the corresponding metal ions from aqueous solutions and then in situ precipitation with S2- treatments within GA microgels. Transmission electron microscopy (TEM) confirmed the existence of the evenly distributed QDs within GA microgel matrices for each of the prepared QDs. All the fabricated GA-QD composites have shown excellent semiconducting behaviors with relatively larger band gap values of 4.87 eV, 4.60 eV, 6.71 eV, 4.81 eV, 3.68 eV, 5.2 eV, and 4.0 eV for CdS, PbS, ZnS, CuS, CoS, MoS, and MnS, respectively. The results revealed that CdS and ZnS are found to be the most efficient florescence materials amongst the all QDs with 630 and 70 cd/cm2 fluorescence intensities, respectively. Moreover, the magnetic susceptibility study suggests that Mn(IV), Co(III), and Mo(IV), have mononuclear octahedral geometries whereas Zn(II), Cd(II), and Pb(II) show binuclear geometries.

  3. Universal quantum computing with nanowire double quantum dots

    International Nuclear Information System (INIS)

    Xue Peng

    2011-01-01

    We present a method for implementing universal quantum computing using a singlet and triplets of nanowire double quantum dots coupled to a one-dimensional transmission line resonator. This method is suitable and of interest for both quantum computing and quantum control with inhibition of spontaneous emission, enhanced spin qubit lifetime, strong coupling and quantum nondemolition measurements of spin qubits. We analyze the performance and stability of all the required operations and emphasize that all techniques are feasible with current experimental technology.

  4. Spectroscopy characterization and quantum yield determination of quantum dots

    International Nuclear Information System (INIS)

    Ortiz, S N Contreras; Ospino, E Mejía; Cabanzo, R

    2016-01-01

    In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum. (paper)

  5. Composite films of metal doped CoS/carbon allotropes; efficient electrocatalyst counter electrodes for high performance quantum dot-sensitized solar cells.

    Science.gov (United States)

    Khalili, Seyede Sara; Dehghani, Hossein; Afrooz, Malihe

    2017-05-01

    This study reports the enhanced catalytic ability of metal ions-doped CoS and CoS/carbon allotrope counter electrodes (CEs) (synthesized using a successive ionic layer adsorption and reaction (SILAR) method) to improve the power conversion efficiency (η) in quantum dot-sensitized solar cells (QDSSCs). Firstly, doping effects of different metal ions (Mg 2+ , Ca 2+ , Sr 2+ and Ba 2+ ) in the CoS CE on the QDSSCs performance have been investigated. Overall, among the different metal doped CoS CEs, the best energy conversion efficiency of 2.19%, achieved for Sr, is the highest reported for QDSSCs constructed with metal doped CoS. A sandwich structural Sr- and Ba-CoS/carbon allotrope (graphene sheet (GS), graphene oxide (GO) and carbon nanotube (CNT)) composite CEs have been prepared by repeating electrophoretic deposition (EPD) of carbon materials and deposition of CoS nanoparticles. Dramatic enhancements of η have been observed with the Sr- and Ba-CoS/GO CEs based QDSSCs (∼76% and ∼41%, respectively), which is higher than that of the bare CoS CE. Because of the large specific surface area and superior electrical conductivity of GS, GO and CNT and the high electrocatalytic activity of CoS, these CEs show an improvement in the photocurrent density in the cells, as revealed from electrochemical and spectral data. Copyright © 2017 Elsevier Inc. All rights reserved.

  6. Advancements in the Field of Quantum Dots

    Science.gov (United States)

    Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

    2012-08-01

    Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

  7. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun

    2015-07-15

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  8. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  9. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  10. Application of Quantum Dots in Biological Imaging

    Directory of Open Access Journals (Sweden)

    Shan Jin

    2011-01-01

    Full Text Available Quantum dots (QDs are a group of semiconducting nanomaterials with unique optical and electronic properties. They have distinct advantages over traditional fluorescent organic dyes in chemical and biological studies in terms of tunable emission spectra, signal brightness, photostability, and so forth. Currently, the major type of QDs is the heavy metal-containing II-IV, IV-VI, or III-V QDs. Silicon QDs and conjugated polymer dots have also been developed in order to lower the potential toxicity of the fluorescent probes for biological applications. Aqueous solubility is the common problem for all types of QDs when they are employed in the biological researches, such as in vitro and in vivo imaging. To circumvent this problem, ligand exchange and polymer coating are proven to be effective, besides synthesizing QDs in aqueous solutions directly. However, toxicity is another big concern especially for in vivo studies. Ligand protection and core/shell structure can partly solve this problem. With the rapid development of QDs research, new elements and new morphologies have been introduced to this area to fabricate more safe and efficient QDs for biological applications.

  11. Quantum computation with two-dimensional graphene quantum dots

    International Nuclear Information System (INIS)

    Li Jie-Sen; Li Zhi-Bing; Yao Dao-Xin

    2012-01-01

    We study an array of graphene nano sheets that form a two-dimensional S = 1/2 Kagome spin lattice used for quantum computation. The edge states of the graphene nano sheets are used to form quantum dots to confine electrons and perform the computation. We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots. It is shown that both schemes contain a great amount of information for quantum computation. The corresponding gate operations are also proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Quantum Dots in Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Sollner, Immo Nathanael

    This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission into the...... quantum-dot-waveguide coupling. Such a structure is ideally suited for a number of applications in quantum information processing and among others we propose an on-chip spin-photon interface, a single photon transistor, and a deterministic cNOT gate.......This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...

  13. Perspective: The future of quantum dot photonic integrated circuits

    Directory of Open Access Journals (Sweden)

    Justin C. Norman

    2018-03-01

    Full Text Available Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS foundries.

  14. Perspective: The future of quantum dot photonic integrated circuits

    Science.gov (United States)

    Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

    2018-03-01

    Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

  15. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    Science.gov (United States)

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  16. Quantum Dot Systems: a versatile platform for quantum simulations

    International Nuclear Information System (INIS)

    Barthelemy, Pierre; Vandersypen, Lieven M.K.

    2013-01-01

    Quantum mechanics often results in extremely complex phenomena, especially when the quantum system under consideration is composed of many interacting particles. The states of these many-body systems live in a space so large that classical numerical calculations cannot compute them. Quantum simulations can be used to overcome this problem: complex quantum problems can be solved by studying experimentally an artificial quantum system operated to simulate the desired hamiltonian. Quantum dot systems have shown to be widely tunable quantum systems, that can be efficiently controlled electrically. This tunability and the versatility of their design makes them very promising quantum simulators. This paper reviews the progress towards digital quantum simulations with individually controlled quantum dots, as well as the analog quantum simulations that have been performed with these systems. The possibility to use large arrays of quantum dots to simulate the low-temperature Hubbard model is also discussed. The main issues along that path are presented and new ideas to overcome them are proposed. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Inorganic passivation and doping control in colloidal quantum dot photovoltaics

    KAUST Repository

    Hoogland, Sjoerd H.

    2012-01-01

    We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.

  18. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  19. Exploring Graphene Quantum Dots/TiO2 interface in photoelectrochemical reactions: Solar to fuel conversion

    International Nuclear Information System (INIS)

    Sudhagar, Pitchaimuthu; Herraiz-Cardona, Isaac; Park, Hun; Song, Taesup; Noh, Seung Hyun; Gimenez, Sixto; Sero, Ivan Mora; Fabregat-Santiago, Francisco; Bisquert, Juan; Terashima, Chiaki; Paik, Ungyu; Kang, Yong Soo

    2016-01-01

    Highlights: • Low dimension ∼5 nm graphene quantum dots nanoparticles were synthesized using chemical exfoliation method. • One dimensional TiO 2 hallow nanowire is grown directly onto conducting substrates using ZnO nanowire as sacrificial template. • The merits of optical properties of the graphene quantum dots sensitizer with the transport properties of the host 1-D TiO 2 nanowire were combined and demonstrate as photoanode in photoelectrochemical hydrogen generation. • A photocurrent enhancement of ∼70% at pristine TiO 2 by graphene quantum dots was achieved through photoelectrocatalytic water oxidation using sacrificial-free electrolyte. • The underlying mechanism of photocharge carrier transfer characteristics at graphene quantum dots/TiO 2 interface is studied using electrochemical impedance spectroscopy. - Abstract: Photocarrier (e − /h + ) generation at low dimension graphene quantum dots offers multifunctional applications including bioimaging, optoelectronics and energy conversion devices. In this context, graphene quantum dots onto metal oxide electron transport layer finds great deal of attention in solar light driven photoelectrochemical (PEC) hydrogen fuel generation. The merits of combining tailored optical properties of the graphene quantum dots sensitizer with the transport properties of the host wide band gap one dimensional nanostructured semiconductor provide a platform for high charge collection which promotes catalytic proton reduction into fuel generation at PEC cells. However, understanding the underlying mechanism of photocarrier transfer characteristics at graphene quantum dots/metal oxide interface during operation is often difficult as graphene quantum dots may have a dual role as sensitizer and catalyst. Therefore, exploring photocarrier generation and injection at graphene quantum dot/metal oxide heterointerfaces in contact with hole scavenging electrolyte afford a new pathway in developing graphene quantum dots based

  20. PREFACE: Quantum dots as probes in biology

    Science.gov (United States)

    Cieplak, Marek

    2013-05-01

    photosynthetic systems. The next paper, by Olejnik et al, discussed metallic QDs which enhance photosynthetic function in light-harvesting biomolecular complexes. Such hybrid structures with gold QDs are shown to exhibit a strong increase in the fluorescence quantum yield. The next two papers, by Sikora et al and Kaminska et al deal with the ZnO nanoparticles passivated by MgO. In the first of these two papers, the authors describe the behavior of ZnO/MgO when introduced to human cancer cells. In the second, the authors describe the QDs with an extra outer layer of Fe2O3 which makes the nanoparticles superparamagnetic and also capable of generation of reactive oxygen species which could be applied to form localized centers of toxicity for cancer treatment. Finally, in the last paper by Yatsunenko et al, the authors discuss several semiconducting QDs like ZnO with various rare-earth dopands. They propose a microwave-driven hydrothermal technology to make them, characterize their luminescence and demonstrate their usefulness in the early recognition of cancer tissues. Quantum dots as probes in biology contents Quantum dots as probes in biologyMarek Cieplak Luminescent nanoparticles and their applications in the life sciencesVarun K A Sreenivasan, Andrei V Zvyagin and Ewa M Goldys Ferredoxin:NADP+ oxidoreductase in junction with CdSe/ZnS quantum dots: characteristics of an enzymatically active nanohybrid Krzysztof Szczepaniak, Remigiusz Worch and Joanna Grzyb Spectroscopic studies of plasmon coupling between photosynthetic complexes and metallic quantum dotsMaria Olejnik, Bartosz Krajnik, Dorota Kowalska, Guanhua Lin and Sebastian Mackowski Luminescence of colloidal ZnO nanoparticles synthesized in alcohols and biological application of ZnO passivated by MgOBożena Sikora, Krzysztof Fronc, Izabela Kamińska, Kamil Koper, Piotr Stępień and Danek Elbaum Novel ZnO/MgO/Fe2O3 composite optomagnetic nanoparticles I Kamińska, B Sikora, K Fronc, P Dziawa, K Sobczak, R Minikayev, W

  1. Coherent transport through interacting quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hiltscher, Bastian

    2012-10-05

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  2. Coherent transport through interacting quantum dots

    International Nuclear Information System (INIS)

    Hiltscher, Bastian

    2012-01-01

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  3. Coherence and dephasing in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan

    2003-01-01

    We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...... coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneours broadening mechanism in the latter....

  4. Phosphate Favors the Biosynthesis of CdS Quantum Dots inAcidithiobacillus thiooxidansATCC 19703 by Improving Metal Uptake and Tolerance.

    Science.gov (United States)

    Ulloa, Giovanni; Quezada, Carolina P; Araneda, Mabel; Escobar, Blanca; Fuentes, Edwar; Álvarez, Sergio A; Castro, Matías; Bruna, Nicolás; Espinoza-González, Rodrigo; Bravo, Denisse; Pérez-Donoso, José M

    2018-01-01

    Recently, we reported the production of Cadmium sulfide (CdS) fluorescent semiconductor nanoparticles (quantum dots, QDs) by acidophilic bacteria of the Acidithiobacillus genus. Here, we report that the addition of inorganic phosphate to Acidithiobacillus thiooxidans ATCC 19703 cultures favors the biosynthesis of CdS QDs at acidic conditions (pH 3.5). The effect of pH, phosphate and cadmium concentrations on QDs biosynthesis was studied by using Response Surface Methodology (RSM), a multivariate technique for analytical optimization scarcely used in microbiological studies to date. To address how phosphate affects intracellular biosynthesis of CdS QDs, the effect of inorganic phosphate on bacterial cadmium-uptake was evaluated. By measuring intracellular levels of cadmium we determined that phosphate influences the capacity of cells to incorporate this metal. A relation between cadmium tolerance and phosphate concentrations was also determined, suggesting that phosphate participates in the adaptation of bacteria to toxic levels of this metal. In addition, QDs-biosynthesis was also favored by the degradation of intracellular polyphosphates. Altogether, our results indicate that phosphate contributes to A. thiooxidans CdS QDs biosynthesis by influencing cadmium uptake and cadmium tolerance. These QDs may also be acting as a nucleation point for QDs formation at acidic pH. This is the first study reporting the effect of phosphates on QDs biosynthesis and describes a new cadmium-response pathway present in A. thiooxidans and most probably in other bacterial species.

  5. Phosphate Favors the Biosynthesis of CdS Quantum Dots in Acidithiobacillus thiooxidans ATCC 19703 by Improving Metal Uptake and Tolerance

    Science.gov (United States)

    Ulloa, Giovanni; Quezada, Carolina P.; Araneda, Mabel; Escobar, Blanca; Fuentes, Edwar; Álvarez, Sergio A.; Castro, Matías; Bruna, Nicolás; Espinoza-González, Rodrigo; Bravo, Denisse; Pérez-Donoso, José M.

    2018-01-01

    Recently, we reported the production of Cadmium sulfide (CdS) fluorescent semiconductor nanoparticles (quantum dots, QDs) by acidophilic bacteria of the Acidithiobacillus genus. Here, we report that the addition of inorganic phosphate to Acidithiobacillus thiooxidans ATCC 19703 cultures favors the biosynthesis of CdS QDs at acidic conditions (pH 3.5). The effect of pH, phosphate and cadmium concentrations on QDs biosynthesis was studied by using Response Surface Methodology (RSM), a multivariate technique for analytical optimization scarcely used in microbiological studies to date. To address how phosphate affects intracellular biosynthesis of CdS QDs, the effect of inorganic phosphate on bacterial cadmium-uptake was evaluated. By measuring intracellular levels of cadmium we determined that phosphate influences the capacity of cells to incorporate this metal. A relation between cadmium tolerance and phosphate concentrations was also determined, suggesting that phosphate participates in the adaptation of bacteria to toxic levels of this metal. In addition, QDs-biosynthesis was also favored by the degradation of intracellular polyphosphates. Altogether, our results indicate that phosphate contributes to A. thiooxidans CdS QDs biosynthesis by influencing cadmium uptake and cadmium tolerance. These QDs may also be acting as a nucleation point for QDs formation at acidic pH. This is the first study reporting the effect of phosphates on QDs biosynthesis and describes a new cadmium-response pathway present in A. thiooxidans and most probably in other bacterial species. PMID:29515535

  6. Phosphate Favors the Biosynthesis of CdS Quantum Dots in Acidithiobacillus thiooxidans ATCC 19703 by Improving Metal Uptake and Tolerance

    Directory of Open Access Journals (Sweden)

    Giovanni Ulloa

    2018-02-01

    Full Text Available Recently, we reported the production of Cadmium sulfide (CdS fluorescent semiconductor nanoparticles (quantum dots, QDs by acidophilic bacteria of the Acidithiobacillus genus. Here, we report that the addition of inorganic phosphate to Acidithiobacillus thiooxidans ATCC 19703 cultures favors the biosynthesis of CdS QDs at acidic conditions (pH 3.5. The effect of pH, phosphate and cadmium concentrations on QDs biosynthesis was studied by using Response Surface Methodology (RSM, a multivariate technique for analytical optimization scarcely used in microbiological studies to date. To address how phosphate affects intracellular biosynthesis of CdS QDs, the effect of inorganic phosphate on bacterial cadmium-uptake was evaluated. By measuring intracellular levels of cadmium we determined that phosphate influences the capacity of cells to incorporate this metal. A relation between cadmium tolerance and phosphate concentrations was also determined, suggesting that phosphate participates in the adaptation of bacteria to toxic levels of this metal. In addition, QDs-biosynthesis was also favored by the degradation of intracellular polyphosphates. Altogether, our results indicate that phosphate contributes to A. thiooxidans CdS QDs biosynthesis by influencing cadmium uptake and cadmium tolerance. These QDs may also be acting as a nucleation point for QDs formation at acidic pH. This is the first study reporting the effect of phosphates on QDs biosynthesis and describes a new cadmium-response pathway present in A. thiooxidans and most probably in other bacterial species.

  7. Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

    Science.gov (United States)

    Lüker, S.; Kuhn, T.; Reiter, D. E.

    2017-12-01

    Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

  8. Bright infrared LEDs based on colloidal quantum-dots

    KAUST Repository

    Sun, Liangfeng

    2013-01-01

    Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.

  9. Imaging vasculature and lymphatic flow in mice using quantum dots

    DEFF Research Database (Denmark)

    Ballou, Byron; Ernst, Lauren A.; Andreko, Susan

    2009-01-01

    Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...... methods for use with commercially available quantum dots and discuss common difficulties....

  10. High resolution STEM of quantum dots and quantum wires

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima

    2013-01-01

    This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...

  11. THz quantum-confined Stark effect in semiconductor quantum dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.

    2012-01-01

    We demonstrate an instantaneous all-optical manipulation of optical absorption at the ground state of InGaAs/GaAs quantum dots (QDs) via a quantum-confined Stark effect (QCSE) induced by the electric field of incident THz pulses with peak electric fields reaching 200 kV/cm in the free space...

  12. Some aspects of quantum dot toxicity.

    Science.gov (United States)

    Bottrill, Melanie; Green, Mark

    2011-07-07

    Quantum dot toxicity has become a hot topic in recent years due to the emergence of semiconductor nanoparticles as highly efficient biological imaging agents. The use of quantum dots in biology is arguably the most successful application of pure nanotechnology in recent times, although unfortunately, the most useful semiconductor particles contain elements that are often thought to be detrimental to health and the environment. In this article, we explore some key reports on this issue. This journal is © The Royal Society of Chemistry 2011

  13. Cadmium telluride quantum dots advances and applications

    CERN Document Server

    Donegan, John

    2013-01-01

    Optical Properties of Bulk and Nanocrystalline Cadmium Telluride, Núñez Fernández and M.I. VasilevskiyAqueous Synthesis of Colloidal CdTe Nanocrystals, V. Lesnyak, N. Gaponik, and A. EychmüllerAssemblies of Thiol-Capped CdTe Nanocrystals, N. GaponikFörster Resonant Energy Transfer in CdTe Nanocrystal Quantum Dot Structures, M. Lunz and A.L. BradleyEmission of CdTe Nanocrystals Coupled to Microcavities, Y.P. Rakovich and J.F. DoneganBiological Applications of Cadmium Telluride Semiconductor Quantum Dots, A. Le Cign

  14. InN Quantum Dot Based Infra-Red Photodetectors.

    Science.gov (United States)

    Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

    2016-01-01

    Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

  15. Random Telegraph Signal in a Metallic Double-Dot System

    Science.gov (United States)

    Vardi, Yuval; Guttman, Avraham; Bar-Joseph, Israel

    2015-03-01

    Double quantum dot systems offer a unique opportunity for studying the world of quantum transport. This stems from the ability to localize an electron in a limited region in space on the dot, and monitor its presence and properties. Another system, in which electrons can be stored and measured, is an electronic trap in solid. The electrons in such a trap are better isolated from the environment. However, their measurement and control are more difficult. Here we demonstrate how these two systems, metallic double-dots and electronic traps, are combined to yield a hybrid structure in which an electron can be stored for long durations and can be easily detected and measured. We investigate the dynamics of a single electron surface trap, embedded in a self-assembly metallic double-dot system. The charging and discharging of the trap by a single electron is manifested as a random telegraph signal of the current through the double-dot device. We find that we can control the duration that an electron resides in the trap through the current, varying it between fractions of a second to more than an hour, at the Coulomb blockade region. We suggest that the observed switching is the electrical manifestation of the optical blinking phenomenon, commonly observed in semiconductor quantum dots. Y. Vardi, A. Guttman, and I. Bar-Joseph, Nano Lett. 14, 2794 (2014). [DOI: 10.1021/nl500803p

  16. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  17. Dynamic localization in quantum dots: Analytical theory

    International Nuclear Information System (INIS)

    Basko, D.M.; Skvortsov, M.A.; Kravtsov, V.E.

    2003-02-01

    We analyze the response of a complex quantum-mechanical system (e.g., a quantum dot) to a time-dependent perturbation φ(t). Assuming the dot to be described by random matrix theory for GOE we find the quantum correction to the energy absorption rate as a function of the dephasing time t φ . If φ(t) is a sum of d harmonics with incommensurate frequencies, the correction behaves similarly to that to the conductivity δσ d (t φ ) in the d-dimensional Anderson model of the orthogonal symmetry class. For a generic periodic perturbation the leading quantum correction is absent as in the systems of the unitary symmetry class, unless φ(-t+τ)=φ(t+τ) for some τ, which falls into the quasi-1d orthogonal universality class. (author)

  18. Magnetic control of dipolaritons in quantum dots

    International Nuclear Information System (INIS)

    Rojas-Arias, J S; Vinck-Posada, H; Rodríguez, B A

    2016-01-01

    Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure. (paper)

  19. Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array

    Science.gov (United States)

    Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.

    2017-08-01

    Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

  20. Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

    Science.gov (United States)

    Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K

    2017-08-02

    Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.

  1. Biosensing with Luminescent Semiconductor Quantum Dots

    OpenAIRE

    Sapsford, Kim E.; Pons, Thomas; Medintz, Igor L.; Mattoussi, Hedi

    2006-01-01

    Luminescent semiconductor nanocrystals or quantum dots (QDs) are a recently developed class of nanomaterial whose unique photophysical properties are helping to create a new generation of robust fluorescent biosensors. QD properties of interest for biosensing include high quantum yields, broad absorption spectra coupled to narrow size-tunable photoluminescent emissions and exceptional resistance to both photobleaching and chemical degradation. In this review, we examine the progress in adapti...

  2. Quantum Dots Based Rad-Hard Computing and Sensors

    Science.gov (United States)

    Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

    2001-01-01

    Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

  3. Electron Acceptor Materials Engineering in Colloidal Quantum Dot Solar Cells

    KAUST Repository

    Liu, Huan

    2011-07-15

    Lead sulfide colloidal quantum dot (CQD) solar cells with a solar power conversion efficiency of 5.6% are reported. The result is achieved through careful optimization of the titanium dioxide electrode that serves as the electron acceptor. Metal-ion-doped sol-gel-derived titanium dioxide electrodes produce a tunable-bandedge, well-passivated materials platform for CQD solar cell optimization. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Hybrid quantum-classical modeling of quantum dot devices

    Science.gov (United States)

    Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

    2017-11-01

    The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

  5. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  6. In vivo cation exchange in quantum dots for tumor-specific imaging.

    Science.gov (United States)

    Liu, Xiangyou; Braun, Gary B; Qin, Mingde; Ruoslahti, Erkki; Sugahara, Kazuki N

    2017-08-24

    In vivo tumor imaging with nanoprobes suffers from poor tumor specificity. Here, we introduce a nanosystem, which allows selective background quenching to gain exceptionally tumor-specific signals. The system uses near-infrared quantum dots and a membrane-impermeable etchant, which serves as a cation donor. The etchant rapidly quenches the quantum dots through cation exchange (ionic etching), and facilitates renal clearance of metal ions released from the quantum dots. The quantum dots are intravenously delivered into orthotopic breast and pancreas tumors in mice by using the tumor-penetrating iRGD peptide. Subsequent etching quenches excess quantum dots, leaving a highly tumor-specific signal provided by the intact quantum dots remaining in the extravascular tumor cells and fibroblasts. No toxicity is noted. The system also facilitates the detection of peritoneal tumors with high specificity upon intraperitoneal tumor targeting and selective etching of excess untargeted quantum dots. In vivo cation exchange may be a promising strategy to enhance specificity of tumor imaging.The imaging of tumors in vivo using nanoprobes has been challenging due to the lack of sufficient tumor specificity. Here, the authors develop a tumor-specific quantum dot system that permits in vivo cation exchange to achieve selective background quenching and high tumor-specific imaging.

  7. Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.

    Science.gov (United States)

    Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin

    2017-06-27

    Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.

  8. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman M.

    2015-05-28

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

  9. New small quantum dots for neuroscience

    Science.gov (United States)

    Selvin, Paul

    2014-03-01

    In "New Small Quantum Dots for Neuroscience," Paul Selvin (University of Illinois, Urbana-Champaign) notes how the details of synapsis activity in the brain involves chemical receptors that facilitate the creation of the electrical connection between two nerves. In order to understand the details of this neuroscience phenomenon you need to be able to "see" what is happening at the scale of these receptors, which is around 10 nanometers. This is smaller than the diffraction limit of normal microscopy and it takes place on a 3 dimensional structure. Selvin describes the development of small quantum dots (on the order of 6-9 microns) that are surface-sensitized to interact with the receptors. This allows the application of photo-activated localized microscopy (PALM), a superresolution microscopy that can be scanned through focus to develop a 3D map on a scale that is the same size as the emitter, which in this case are the small quantum dots. The quantum dots are stable in time and provide access to the receptors which allows the imaging of the interactions taking place at the synoptic level.

  10. Quantum Dot Detectors with Plasmonic Structures

    Science.gov (United States)

    2015-05-15

    high operating temperature quantum dots in a well photodetectors,” Appl. Phys. Lett. 97(6), 061105 (2010). 18. J. D. Jackson, Classical ... Electrodynamics (Wiley, New York, 3rd Edition, 1999). Approved for Public Release; Distribution is Unlimited. 10 19. J. O. Kim, S. Sengupta, A. V. Barve, Y. D

  11. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  12. Decoherence in Nearly-Isolated Quantum Dots

    DEFF Research Database (Denmark)

    Folk, J.; M. Marcus, C.; Harris jr, J.

    2000-01-01

    Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single...

  13. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...

  14. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... Quantum dot semiconductor lasers, due to the discrete density of states, low threshold current and ... energy states, strain, and other physical features, and their change by varying some factors such as ... tion 2 explains the model and method of the numerical simulation. Our results and discussions on the ...

  15. Competing interactions in semiconductor quantum dots

    NARCIS (Netherlands)

    van den Berg, R.; Brandino, G.P.; El Araby, O.; Konik, R.M.; Gritsev, V.; Caux, J.S.

    2014-01-01

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free-induction decay and spin-echo simulations

  16. Magnetic quantum dots for multimodal imaging

    NARCIS (Netherlands)

    Koole, Rolf; Mulder, Willem J. M.; van Schooneveld, Matti M.; Strijkers, Gustav J.; Meijerink, Andries; Nicolay, Klaas

    2009-01-01

    Multimodal contrast agents based on highly luminescent quantum dots (QDs) combined with magnetic nanoparticles (MNPs) or ions form an exciting class of new materials for bioimaging. With two functionalities integrated in a single nanoparticle, a sensitive contrast agent for two very powerful and

  17. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... Abstract. In this paper, the strain, band-edge, and energy levels of pyramidal InxGa1−xAs/GaAs quantum dots are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates ...

  18. Quantum Dots Coupled to a Superconductor

    DEFF Research Database (Denmark)

    Jellinggaard, Anders Robert

    are tuned electrostatically. This includes tuning the odd occupation of the dot through a quantum phase transition, where it forms a singlet with excitations in the superconductor. We detail the fabrication of these bottom gated devices, which additionally feature ancillary sensor dots connected......In this thesis, sub-gap states in bottom-gated InAs N–dot–S, N–double dot–S, and N–dot–S–dot–N devices are investigated, and several different theories are developed to model these states. Experimental results include tracking single levels of the dot in an N–dot–S device as the tunnel couplings...... with floating gates. A numerical technique is developed, which predicts the position of Yu-Shiba-Rusinov sub-gap states in the proximitized Anderson model as well as properties of these states. This theory is valid for all occupations of the dot and for weak to intermediate coupling. We compare...

  19. Theoretical studies on the possible sensitizers of DSSC: Nanocomposites of graphene quantum dot hybrid phthalocyanine/tetrabenzoporphyrin/tetrabenzotriazaporphyrins/cis-tetrabenzodiazaporphyrins/tetrabenzomonoazaporphyrins and their Cu-metallated macrocycles

    Science.gov (United States)

    Gao, Feng; Yang, Chuan-Lu; Wang, Mei-Shan; Ma, Xiao-Guang; Liu, Wen-Wang

    2018-04-01

    The feasibility of nanocomposites of cir-coronene graphene quantum dot (GQD) with phthalocyanine, tetrabenzoporphyrin, tetrabenzotriazaporphyrins, cis-tetrabenzodiazaporphyrins, tetrabenzomonoazaporphyrins and their Cu-metallated macrocycles as a sensitizer of dye-sensitized solar cells (DSSC) are investigated. Based on the first principles density functional theory (DFT), the geometrical structures of the separate GQD and 10 macrocycles, and their hybridized nanocomposites are fully optimized. The energy stabilities of the obtained structures are confirmed by harmonic frequency analysis. The optical absorptions of the optimized structures are calculated with time-dependent DFT. The feasibility of the nanocomposites as the sensitizer of DSSC is examined by the charge spatial separation, the electron transfer, the molecular orbital energy levels of the nanocomposites and the electrolyte, and the conduction band minimum of TiO2 electrode. The results demonstrate that all the nanocomposites have enhanced absorptions in the visible light range, and their molecular orbital energies satisfy the requirement of sensitizers. However, only two of the ten considered nanocomposites demonstrate significantly charge spatial separation. The GQD-Cu-TBP is identified as the most favorable candidate sensitizer of DSSC by the most enhanced in optical absorption, obvious charge spatial separation, suitable LUMO energy levels and driving force for electron transfer, and low recombination rate of electron and hole.

  20. Metal Dependence of Signal Transmission through MolecularQuantum-Dot Cellular Automata (QCA: A Theoretical Studyon Fe, Ru, and Os Mixed-Valence Complexes

    Directory of Open Access Journals (Sweden)

    Ken Tokunaga

    2010-08-01

    Full Text Available Dynamic behavior of signal transmission through metal complexes [L5M-BL-ML5]5+ (M=Fe, Ru, Os, BL=pyrazine (py, 4,4’-bipyridine (bpy, L=NH3, which are simplified models of the molecular quantum-dot cellular automata (molecular QCA, is discussed from the viewpoint of one-electron theory, density functional theory. It is found that for py complexes, the signal transmission time (tst is Fe(0.6 fs < Os(0.7 fs < Ru(1.1 fs and the signal amplitude (A is Fe(0.05 e < Os(0.06 e < Ru(0.10 e. For bpy complexes, tst and A are Fe(1.4 fs < Os(1.7 fs < Ru(2.5 fs and Os(0.11 e < Ru(0.12 e

  1. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  2. Vertical quantum dot with a vertically coupled charge detector

    International Nuclear Information System (INIS)

    Zaitsu, Koichiro; Kitamura, Yosuke; Ono, Keiji; Tarucha, Seigo

    2008-01-01

    We fabricated a vertical quantum dot equipped with a charge detector. The dot current flows vertically between the top and bottom contacts. The charge detector is formed at the bottom contact layer with a current channel constricted to the region just under the dot. This channel current is reduced by addition of an extra electron onto the dot due to the electrostatic coupling to the dot. The charge state of the vertical dot was detected, starting from zero electrons. The sensitivity of the charge detector was comparable to that previously reported for lateral dots with nearby quantum point contacts

  3. Quantum Computation Using Optically Coupled Quantum Dot Arrays

    Science.gov (United States)

    Pradhan, Prabhakar; Anantram, M. P.; Wang, K. L.; Roychowhury, V. P.; Saini, Subhash (Technical Monitor)

    1998-01-01

    A solid state model for quantum computation has potential advantages in terms of the ease of fabrication, characterization, and integration. The fundamental requirements for a quantum computer involve the realization of basic processing units (qubits), and a scheme for controlled switching and coupling among the qubits, which enables one to perform controlled operations on qubits. We propose a model for quantum computation based on optically coupled quantum dot arrays, which is computationally similar to the atomic model proposed by Cirac and Zoller. In this model, individual qubits are comprised of two coupled quantum dots, and an array of these basic units is placed in an optical cavity. Switching among the states of the individual units is done by controlled laser pulses via near field interaction using the NSOM technology. Controlled rotations involving two or more qubits are performed via common cavity mode photon. We have calculated critical times, including the spontaneous emission and switching times, and show that they are comparable to the best times projected for other proposed models of quantum computation. We have also shown the feasibility of accessing individual quantum dots using the NSOM technology by calculating the photon density at the tip, and estimating the power necessary to perform the basic controlled operations. We are currently in the process of estimating the decoherence times for this system; however, we have formulated initial arguments which seem to indicate that the decoherence times will be comparable, if not longer, than many other proposed models.

  4. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    developed in the study of single quantum dots, characterized by sharp atomic-like transition lines revealing their zero-dimensional density of states. Substantial information about the fundamental properties of individual quantum dots, as well as their interactions with other dots and the host lattice, can...

  5. Theory of the Quantum Dot Hybrid Qubit

    Science.gov (United States)

    Friesen, Mark

    2015-03-01

    The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.

  6. Single quantum dots fundamentals, applications, and new concepts

    CERN Document Server

    2003-01-01

    This book reviews recent advances in the exciting and rapid growing field of semiconductor quantum dots by contributions from some of the most prominent researchers in the field. Special focus is given to the optical and electronic properties of single quantum dots due to their potential applications in devices operating with single electrons and/or single photons. This includes quantum dots in electric and magnetic fields, cavity-quantum electrodynamics, nonclassical light generation, and coherent optical control of excitons. Single Quantum Dots also addresses various growth techniques as well as potential device applications such as quantum dot lasers, and new concepts like a single-photon source, and a single quantum dot laser.

  7. Peptide-Decorated Tunable-Fluorescence Graphene Quantum Dots.

    Science.gov (United States)

    Sapkota, Bedanga; Benabbas, Abdelkrim; Lin, Hao-Yu Greg; Liang, Wentao; Champion, Paul; Wanunu, Meni

    2017-03-22

    We report here the synthesis of graphene quantum dots with tunable size, surface chemistry, and fluorescence properties. In the size regime 15-35 nm, these quantum dots maintain strong visible light fluorescence (mean quantum yield of 0.64) and a high two-photon absorption (TPA) cross section (6500 Göppert-Mayer units). Furthermore, through noncovalent tailoring of the chemistry of these quantum dots, we obtain water-stable quantum dots. For example, quantum dots with lysine groups bind strongly to DNA in solution and inhibit polymerase-based DNA strand synthesis. Finally, by virtue of their mesoscopic size, the quantum dots exhibit good cell permeability into living epithelial cells, but they do not enter the cell nucleus.

  8. Formation of strain-induced quantum dots in gated semiconductor nanostructures

    Directory of Open Access Journals (Sweden)

    Ted Thorbeck

    2015-08-01

    Full Text Available A long-standing mystery in the field of semiconductor quantum dots (QDs is: Why are there so many unintentional dots (also known as disorder dots which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

  9. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  10. ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus

    Energy Technology Data Exchange (ETDEWEB)

    Uddandarao, Priyanka, E-mail: uddandaraopriyanka@gmail.com; B, Raj Mohan, E-mail: rajmohanbala@gmail.com

    2016-05-15

    Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.

  11. ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus

    International Nuclear Information System (INIS)

    Uddandarao, Priyanka; B, Raj Mohan

    2016-01-01

    Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.

  12. Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

    Science.gov (United States)

    Boyd, Erin E.; Storm, Kristian; Samuelson, Lars; Westervelt, Robert M.

    2011-05-01

    We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter≈30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.

  13. Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Boyd, Erin E; Westervelt, Robert M [Department of Physics, Harvard University, Cambridge, MA 02138 (United States); Storm, Kristian; Samuelson, Lars, E-mail: westervelt@seas.harvard.edu [Solid State Physics/the Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2011-05-06

    We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter{approx}30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.

  14. Quantum photonics with quantum dots in photonic wires

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide

    2016-01-01

    We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...

  15. Quantum optics with quantum dots in photonic wires

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean

    2016-01-01

    We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...

  16. Facile labeling of lipoglycans with quantum dots

    International Nuclear Information System (INIS)

    Morales Betanzos, Carlos; Gonzalez-Moa, Maria; Johnston, Stephen Albert; Svarovsky, Sergei A.

    2009-01-01

    Bacterial endotoxins or lipopolysaccharides (LPS) are among the most potent activators of the innate immune system, yet mechanisms of their action and in particular the role of glycans remain elusive. Efficient non-invasive labeling strategies are necessary for studying interactions of LPS glycans with biological systems. Here we report a new method for labeling LPS and other lipoglycans with luminescent quantum dots. The labeling is achieved by partitioning of hydrophobic quantum dots into the core of various LPS aggregates without disturbing the native LPS structure. The biofunctionality of the LPS-Qdot conjugates is demonstrated by the labeling of mouse monocytes. This simple method should find broad applicability in studies concerned with visualization of LPS biodistribution and identification of LPS binding agents.

  17. Quantum Dot Molecular Beacons for DNA Detection

    Science.gov (United States)

    Cady, Nathaniel C.

    Molecular beacons have become an important fluorescent probe for sequence-specific DNA detection. To improve the sensitivity and robustness of molecular beacon assays, fluorescent semiconductor quantum dots (QDs) are now being used as the fluorescent moiety for molecular beacon synthesis. Multiple linkage strategies can be used for attaching molecular beacon DNA to QDs, and multiple quenchers, including gold particles, can be used for fluorescence quenching. Covalent attachment of QDs to DNA can be achieved through amide linkage, and affinity-based attachment can be achieved with streptavidin-biotin linkage. We have shown that these linkage strategies can be used to successfully create quantum dot molecular beacons that can be used in DNA detection assays with high specificity.

  18. Strain-tunable quantum dot devices

    International Nuclear Information System (INIS)

    Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.

    2011-01-01

    We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.

  19. Single Molecule Applications of Quantum Dots

    DEFF Research Database (Denmark)

    Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.

    2013-01-01

    Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows:...... experiments held together with the prospects in localization microscopy and single molecule manipulation experiments gave QDs a promising future in single molecule research....

  20. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia

    2015-10-13

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

    2009-01-01

    The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

  3. Quantum optics with quantum dots in photonic nanowires

    DEFF Research Database (Denmark)

    Claudon, Julien; Munsch, Matthieu; Bleuse, Joel

    2012-01-01

    Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....

  4. Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    LI Zhi-min

    2017-08-01

    Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.

  5. Using of Quantum Dots in Biology and Medicine.

    Science.gov (United States)

    Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

    2018-01-01

    Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

  6. Electronic transport through a quantum dot chain with strong dot-lead coupling

    International Nuclear Information System (INIS)

    Liu, Yu; Zheng, Yisong; Gong, Weijiang; Gao, Wenzhu; Lue, Tianquan

    2007-01-01

    By means of the non-equilibrium Green function technique, the electronic transport through an N-quantum-dot chain is theoretically studied. By calculating the linear conductance spectrum and the local density of states in quantum dots, we find the resonant peaks in the spectra coincides with the eigen-energies of the N-quantum-dot chain when the dot-lead coupling is relatively weak. With the increase of the dot-lead coupling, such a correspondence becomes inaccurate. When the dot-lead coupling exceeds twice the interdot coupling, such a mapping collapses completely. The linear conductance turn to reflect the eigen-energies of the (N-2)- or (N-1)-quantum dot chain instead. The two peripheral quantum dots do not manifest themselves in the linear conductance spectrum. More interestingly, with the further increase of the dot-lead coupling, the system behaves just like an (N-2)- or (N-1)-quantum dot chain in weak dot-lead coupling limit, since the resonant peaks becomes narrower with the increase of dot-lead coupling

  7. A brilliant sandwich type fluorescent nanostructure incorporating a compact quantum dot layer and versatile silica substrates.

    Science.gov (United States)

    Huang, Liang; Wu, Qiong; Wang, Jing; Foda, Mohamed; Liu, Jiawei; Cai, Kai; Han, Heyou

    2014-03-18

    A "hydrophobic layer in silica" structure was designed to integrate a compact quantum dot (QD) layer with high quantum yield into scalable silica hosts containing desired functionality. This was based on metal affinity driven assembly of hydrophobic QDs with versatile silica substrates and homogeneous encapsulation of organosilica/silica layers.

  8. Biosynthesis of luminescent quantum dots in an earthworm

    Science.gov (United States)

    Stürzenbaum, S. R.; Höckner, M.; Panneerselvam, A.; Levitt, J.; Bouillard, J.-S.; Taniguchi, S.; Dailey, L.-A.; Khanbeigi, R. Ahmad; Rosca, E. V.; Thanou, M.; Suhling, K.; Zayats, A. V.; Green, M.

    2013-01-01

    The synthesis of designer solid-state materials by living organisms is an emerging field in bio-nanotechnology. Key examples include the use of engineered viruses as templates for cobalt oxide (Co3O4) particles, superparamagnetic cobalt-platinum alloy nanowires and gold-cobalt oxide nanowires for photovoltaic and battery-related applications. Here, we show that the earthworm's metal detoxification pathway can be exploited to produce luminescent, water-soluble semiconductor cadmium telluride (CdTe) quantum dots that emit in the green region of the visible spectrum when excited in the ultraviolet region. Standard wild-type Lumbricus rubellus earthworms were exposed to soil spiked with CdCl2 and Na2TeO3 salts for 11 days. Luminescent quantum dots were isolated from chloragogenous tissues surrounding the gut of the worm, and were successfully used in live-cell imaging. The addition of polyethylene glycol on the surface of the quantum dots allowed for non-targeted, fluid-phase uptake by macrophage cells.

  9. Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots

    International Nuclear Information System (INIS)

    Niederbracht, H; Hargart, F; Schwartz, M; Koroknay, E; Kessler, C A; Jetter, M; Michler, P

    2015-01-01

    Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure. (paper)

  10. Silicon quantum dots: fine-tuning to maturity.

    Science.gov (United States)

    Morello, Andrea

    2015-12-18

    Quantum dots in semiconductor heterostructures provide one of the most flexible platforms for the study of quantum phenomena at the nanoscale. The surging interest in using quantum dots for quantum computation is forcing researchers to rethink fabrication and operation methods, to obtain highly tunable dots in spin-free host materials, such as silicon. Borselli and colleagues report in Nanotechnology the fabrication of a novel Si/SiGe double quantum dot device, which combines an ultra-low disorder Si/SiGe accumulation-mode heterostructure with a stack of overlapping control gates, ensuring tight confining potentials and exquisite tunability. This work signals the technological maturity of silicon quantum dots, and their readiness to be applied to challenging projects in quantum information science.

  11. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    International Nuclear Information System (INIS)

    See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

    2015-01-01

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure

  12. Correlation effects in side-coupled quantum dots

    International Nuclear Information System (INIS)

    Zitko, R; Bonca, J

    2007-01-01

    Using Wilson's numerical renormalization group (NRG) technique, we compute zero-bias conductance and various correlation functions of a double quantum dot (DQD) system. We present different regimes within a phase diagram of the DQD system. By introducing a negative Hubbard U on one of the quantum dots, we simulate the effect of electron-phonon coupling and explore the properties of the coexisting spin and charge Kondo state. In a triple quantum dot (TQD) system, a multi-stage Kondo effect appears where localized moments on quantum dots are screened successively at exponentially distinct Kondo temperatures

  13. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  14. Modification of emission photon statistics from single quantum dots using metal/SiO2 core/shell nanostructures.

    Science.gov (United States)

    Naiki, Hiroyuki; Oikawa, Hidetoshi; Masuo, Sadahiro

    2017-04-12

    Emission photon statistics, i.e., single-photon and multi-photon emissions, of isolated QDs is required for tailoring optoelectronic applications. In this article, we demonstrate that the emission photon statistics can be modified by the control of the spectral overlap of the QDs with the localized surface plasmon resonance (LSPR) of the metal nanoparticle (metal NP) and by the distance between the QD and the metal NP. Moreover, the contribution to the modification of the emission photon statistics, which is the excitation and emission enhancements and the quenching generated by the spectral overlap and the distance, is elucidated. By fabricating well-defined SiO 2 -coated AgNPs and AuNPs (metal/SiO 2 ), the spectral overlap originated from the metal species of Ag and Au and the distance constituted by the thickness of the SiO 2 shell are controlled. The probability of single-photon emission of single QD was increased by the enhancement of the excitation rate via adjusting the distance using Ag/SiO 2 while the single-photon emission was converted to multi-photon emission by the effect of exciton quenching at a short distance and a small spectral overlap. By contrast, the probability of multi-photon emission was increased by enhancement of the multi-photon emission rate and the quenching via the spectral overlap using Au/SiO 2 . These results indicated the fundamental finding to control emission photon statistics in single QDs by controlling the spectral overlap and the distance, and understand the interaction of plasmonic nanostructures and single QD systems.

  15. Silver enhancement of quantum dots resulting from (1) metabolism of toxic metals in animals and humans, (2) in vivo, in vitro and immersion created zinc-sulphur/zinc-selenium nanocrystals, (3) metal ions liberated from metal implants and particles.

    Science.gov (United States)

    Danscher, Gorm; Stoltenberg, Meredin

    2006-01-01

    Autometallographic (AMG) silver enhancement is a potent histochemical tool for tracing a variety of metal containing nanocrystals, e.g. pure gold and silver nanoclusters and quantum dots of silver, mercury, bismuth or zinc, with sulphur and/or selenium. These nanocrystals can be created in many different ways, e.g. (1) by manufacturing colloidal gold or silver particles, (2) by treating an organism in vivo with sulphide or selenide ions, (3) as the result of a metabolic decomposition of bismuth-, mercury- or silver-containing macromolecules in cell organelles, or (4) as the end product of histochemical processing of tissue sections. Such nano-sized AMG nanocrystals can then be silver-amplified several times of magnitude by being exposed to an AMG developer, i.e. a normal photographic developer enriched with silver ions. The present monograph attempts to provide a review of the autometallographic silver amplification techniques known today and their use in biology. After achieving a stronghold in histochemistry by Timm's introduction of the "silver-sulphide staining" in 1958, the AMG technique has evolved and expanded into several different areas of research, including immunocytochemistry, tracing of enzymes at LM and EM levels, blot staining, retrograde axonal tracing of zinc-enriched (ZEN) neurons, counterstaining of semithin sections, enhancement of histochemical reaction products, marking of phagocytotic cells, staining of myelin, tracing of gold ions released from gold implants, and visualization of capillaries. General technical comments, protocols for the current AMG methods and a summary of the most significant scientific results obtained by this wide variety of AMG histochemical approaches are included in the present article.

  16. Activating Carrier Multiplication in PbSe Quantum Dot Solids by Infilling with Atomic Layer Deposition.

    Science.gov (United States)

    Ten Cate, Sybren; Liu, Yao; Suchand Sandeep, C S; Kinge, Sachin; Houtepen, Arjan J; Savenije, Tom J; Schins, Juleon M; Law, Matt; Siebbeles, Laurens D A

    2013-06-06

    Carrier multiplication-the generation of multiple electron-hole pairs by a single photon-is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.

  17. Quantum Dot Spectrum Converters for Enhanced High Efficiency Photovoltaics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This research proposes to enhance solar cell efficiency, radiation resistance and affordability. The Quantum Dot Spectrum Converter (QDSC) disperses quantum dots...

  18. Silicon Quantum Dots with Counted Antimony Donor Implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

    2015-10-01

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

  19. Electrostatically defined silicon quantum dots with counted antimony donor implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  20. Near-field strong coupling of single quantum dots.

    Science.gov (United States)

    Groß, Heiko; Hamm, Joachim M; Tufarelli, Tommaso; Hess, Ortwin; Hecht, Bert

    2018-03-01

    Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.

  1. Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg

    In this thesis we have performed quantum-electrodynamics experiments on quantum dots embedded in photonic-crystal cavities. We perform a quantitative comparison of the decay dynamics and emission spectra of quantum dots embedded in a micropillar cavity and a photonic-crystal cavity. The light......-matter interaction in the micropiller caivty is so strong that we measure non-Markovian dynamics of the quantum dot, and we compare to the Jaynes-Cummings model with all parameters independently determined. We find an excellent agreement when comparing the dynamics, but the emission spectra show significant...... deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...

  2. Studies on silicon quantum dots prepared at different working pressure

    Directory of Open Access Journals (Sweden)

    Faisal A. Al-Agel

    Full Text Available This research work describes the synthesis and characterization of Si quantum dots of thickness 20 nm prepared on glass/quartz substrate by Physical Vapour Condensation Technique at the working pressure of 5 and 10 Torr with fixed substrate temperature 77 K using liquid nitrogen. The synthesized quantum dots were studied by FESEM, HRTEM, X-ray diffraction, UV–visible spectroscopy, photoluminescence and FTIR spectroscopy. The X-ray diffraction pattern of synthesized quantum dots shows the amorphous nature. FESEM images of synthesized quantum dots suggest that the size of quantum dots varies from 4–6 nm which is further confirmed by HRTEM. On the basis of optical absorbance by UV–visible spectroscopy, a direct band gap has been detected. FTIR spectra suggest that the as-grown Si quantum dots are partially oxidized which is due exposure of samples to air after taking out the samples from the chamber. PL spectra show a broad peak at 444 nm, which may be attributed to the configuration of amorphous Si quantum dots. A slight shift in the peak position has been observed with increase in working pressure from 5 Torr to 10 Torr. The dc conductivity with temperature of Si quantum dots has also been studied from 303 to 454 K. It is evident that the dc conductivity (σdc enhances linearly with temperature, showing that conduction in Si quantum dots is due to an activated action which further verify the semiconductor deportment of these quantum dots. Keywords: Si quantum dots, Thin films, XRD, Optical properties, Electrical properties

  3. Fano effect and Andreev bound states in T-shape double quantum dots

    International Nuclear Information System (INIS)

    Calle, A.M.; Pacheco, M.; Orellana, P.A.

    2013-01-01

    In this Letter, we investigate the transport through a T-shaped double quantum dot coupled to two normal metal leads left and right and a superconducting lead. Analytical expressions of Andreev transmission and local density of states of the system at zero temperature have been obtained. We study the role of the superconducting lead in the quantum interferometric features of the double quantum dot. We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. Our results show that as a consequence of quantum interference and proximity effect, the transmission from normal to normal lead exhibits Fano resonances due to Andreev bound states. We find that this interference effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. - Highlights: • Transport properties of a double quantum dot coupled in T-shape configuration to conducting and superconducting leads are studied. • We report Fano antiresonances in the normal transmission due to the Andreev reflections in the superconducting lead. • We report for first time the Fano effect produced by Andreev bound states in a side quantum dot. • Fano effect allows us to study the Andreev bound states in the changes in the conductance between two normal leads. • Andreev bound states survives even for strong dot-superconductor coupling

  4. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  5. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

  6. Correlated Coulomb drag in capacitively coupled quantum-dot structures

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Jauho, Antti-Pekka

    2016-01-01

    We study theoretically Coulomb drag in capacitively coupled quantum dots (CQDs) -- a biasdriven dot coupled to an unbiased dot where transport is due to Coulomb mediated energy transfer drag. To this end, we introduce a master-equation approach which accounts for higher-order tunneling (cotunneling...

  7. Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2011-01-01

    The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition......, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 mu m wavelength range is demonstrated. VC 2011 American Institute of Physics. [doi:10.1063/1.3634029]...

  8. Quantum error prevention and leakage elimination for quantum dots

    Science.gov (United States)

    Pegahan, Saeed; Byrd, Mark S.; Reddy Chinni, Karthik

    2015-03-01

    Decoherence-free, or noiseless subsystems, are used to encode spin qubits in quantum dots in order to achieve universal quantum computing using only the exchange interaction. We investigate the use of dynamical decoupling controls for the purposes of eliminating leakage for a logical qubit encoded using three physical qubits. These leakage elimination operators (LEOs) can be used to eliminate all leakage errors using exchange interactions between the physical spin qubits. Depending on the encoding and the decoupling control, different types of errors can be eliminated. We show several different possible controls and the consequential noise reduction for different encodings as well as our general method for determining the effectiveness of these pulses.

  9. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.

    2011-11-22

    Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.

  10. Dynamics of Energy Transfer in Quantum Dot Arrays

    Science.gov (United States)

    Al-Ahmadi, A. N.; Ulloa, S. E.

    2004-04-01

    Förster-type coupling is one of the most important mechanisms that influence the energy transport properties in a quantum dot array. We explore this mechanism by calculating the coupling strength V_F, and by studying the dynamics of the exciton state created in an array of quantum dots using the time evolution of the density matrix approach. We first estimate the coupling strength VF of Förster interaction based on microscopic descriptions of the exciton levels in the quantum dot. We study this parameter for different materials (CdS, CdSe,InP, and GaAs) as function of the dot size. The results show that the maximum value of VF depends on the specific sizes and that each material has optimal coupling for different pairs of quantum dot radii. Other key parameters that govern energy transport are determined for various materials and sizes of quantum dots. Second, we consider a model of coupled quantum dots with two exciton levels in each dot, one optically passive and another active. Analysis of the population of each level when the Förster channel is opened shows this is responsible for interesting physical behavior in different coupling regimes. Realistic parameters used to study the dynamics of the exciton state for dimer and trimer quantum dot clusters, allow us direct comparison with recent experiments by Klimov et al. Supported by US DOE, and Indiana 21^st Century Fund Research and Technology.

  11. Quantum computation with nuclear spins in quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Christ, H.

    2008-01-24

    The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin

  12. Quantum computation with nuclear spins in quantum dots

    International Nuclear Information System (INIS)

    Christ, H.

    2008-01-01

    The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin

  13. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot

    DEFF Research Database (Denmark)

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal

    2016-01-01

    We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offe...

  14. Fractional decay of quantum dots in photonic crystals

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Koenderink, Femius; Lodahl, Peter

    2008-01-01

    We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses.......We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses....

  15. Single-photon superradiance from a quantum dot

    DEFF Research Database (Denmark)

    Tighineanu, Petru; Daveau, Raphaël Sura; Lehmann, Tau Bernstorff

    2016-01-01

    We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The electrostatic interaction between the electron and t...

  16. Electronic properties of assemblies of zno quantum dots

    NARCIS (Netherlands)

    Roest, Aarnoud Laurens

    2003-01-01

    Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling

  17. Stark effect and polarizability of graphene quantum dots

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

  18. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  19. Quantum dots for multimodal molecular imaging of angiogenesis

    NARCIS (Netherlands)

    Mulder, Willem J. M.; Strijkers, Gustav J.; Nicolay, Klaas; Griffioen, Arjan W.

    2010-01-01

    Quantum dots exhibit unique optical properties for bioimaging purposes. We have previously developed quantum dots with a paramagnetic and functionalized coating and have shown their potential for molecular imaging purposes. In the current mini-review we summarize the synthesis procedure, the in

  20. Fabrication of a graphene quantum dot device

    Science.gov (United States)

    Lee, Jeong Il; Kim, Eunseong

    2014-03-01

    Graphene, which exhibits a massless Dirac-like spectrum for its electrons, has shown impressive properties for nano-electronics applications including a high mobility and a width dependent bandgap. We will report the preliminary report on the transport property of the suspended graphene nano-ribbon(GNR) quantum dot device down to dilution refrigerator temperature. This GNR QD device was fabricated to realize an ideal probe to investigate Kondo physics--a characteristic phenomenon in the physics of strongly correlated electrons. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  1. Quantum interference effects for the electronic fluctuations in quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, J.G.G.S. [Universidade Federal da Paraiba (UFPB), Rio Tinto, PB (Brazil). Departamento de Ciencias Exatas; Hussein, M.S. [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica; Barbosa, A.L.R. [Universidade Federal Rural de Pernambuco (UAEADTec/UFRPE), Recife, PE (Brazil). Unidade Academica de Ensino a Distancia. Pos-Graduacao em Fisica Aplicada

    2014-07-01

    For the main quantum interference term of coherent electronic transport, we study the effect of temperature, perpendicular and/or parallel magnetic fields, spin-orbit coupling and tunneling rates in both metallic grains and mesoscopic heterostructures. We show that the Zeeman effects determines a crucial way to characterize the quantum interference phenomena of the noise for anisotropic systems (mesoscopic heterostructures), qualitatively distinct from those observed in isotropic structures (metallic grains). (author)

  2. Quantum dot blueing and blinking enables fluorescence nanoscopy.

    Science.gov (United States)

    Hoyer, Patrick; Staudt, Thorsten; Engelhardt, Johann; Hell, Stefan W

    2011-01-12

    We demonstrate superresolution fluorescence imaging of cells using bioconjugated CdSe/ZnS quantum dot markers. Fluorescence blueing of quantum dot cores facilitates separation of blinking markers residing closer than the diffraction barrier. The high number of successively emitted photons enables ground state depletion microscopy followed by individual marker return with a resolving power of the size of a single dot (∼12 nm). Nanoscale imaging is feasible with a simple webcam.

  3. Second-harmonic imaging of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

    2000-01-01

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...... observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics....

  4. Interaction of porphyrins with CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei, E-mail: weichen@uta.edu [Department of Physics, University of Texas at Arlington, Box 19059 Arlington, TX 76019 (United States)

    2011-05-13

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  5. Numerical simulation of optical feedback on a quantum dot lasers

    International Nuclear Information System (INIS)

    Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.

    2012-01-01

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  6. 3D super-resolution imaging with blinking quantum dots

    Science.gov (United States)

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

    2013-01-01

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

  7. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  8. Biosensing with Luminescent Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Hedi Mattoussi

    2006-08-01

    Full Text Available Luminescent semiconductor nanocrystals or quantum dots (QDs are a recentlydeveloped class of nanomaterial whose unique photophysical properties are helping tocreate a new generation of robust fluorescent biosensors. QD properties of interest forbiosensing include high quantum yields, broad absorption spectra coupled to narrow sizetunablephotoluminescent emissions and exceptional resistance to both photobleaching andchemical degradation. In this review, we examine the progress in adapting QDs for severalpredominantly in vitro biosensing applications including use in immunoassays, asgeneralized probes, in nucleic acid detection and fluorescence resonance energy transfer(FRET - based sensing. We also describe several important considerations when workingwith QDs mainly centered on the choice of material(s and appropriate strategies forattaching biomolecules to the QDs.

  9. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  10. Phonon-assisted decoherence and tunneling in quantum dot molecules

    DEFF Research Database (Denmark)

    Grodecka-Grad, Anna; Foerstner, Jens

    2011-01-01

    We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantum kinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal electron-phonon couplings representing real and virtual...... processes with relevant acoustic phonons. We show that the relaxation is dominated by phonon-assisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between...

  11. Andreev molecules in semiconductor nanowire double quantum dots.

    Science.gov (United States)

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  12. Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells

    International Nuclear Information System (INIS)

    Founta, S.; Bougerol, C.; Mariette, H.; Daudin, B.; Vennegues, P.

    2007-01-01

    The growth of (11-20) or a-plane quantum dots and quantum wells by plasma-assisted molecular-beam epitaxy has been studied. It is shown that Ga-rich conditions lead to the formation of quantum dots, whereas quantum wells are obtained in N-rich conditions. Combining various experimental techniques, it is furthermore demonstrated that quantum dot nucleation along [1-100] and quantum well morphology in the (1-100) plane are influenced by anisotropic growth of AlN buffer layer. Moreover, it is established that peculiar morphological features of quantum dots and quantum wells, in particular the asymmetric shape of quantum dots, are related to the polar character of the [0001] direction in wurtzite nitride material

  13. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  14. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  15. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    Science.gov (United States)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  16. Charge-extraction strategies for colloidal quantum dot photovoltaics

    KAUST Repository

    Lan, Xinzheng

    2014-02-20

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

  17. Atomically precise, coupled quantum dots fabricated by cleaved edge overgrowth

    Science.gov (United States)

    Wegscheider, W.; Schedelbeck, G.; Bichler, M.; Abstreiter, G.

    Recent progress in the fabrication of quantum dots by molecular beam epitaxy along three directions in space is reviewed. The optical properties of different sample structures consisting of individual quantum dots, pairs of coupled dots as well as of linear arrays of dots are studied by microscopic photoluminescence spectroscopy. The high degree of control over shape, composition and position of the 7×7×7 nm3 size GaAs quantum dots, which form at the intesection of three orthogonal quantum wells, allows a detailed investigation of the influence of coupling between almost identical zero-dimensional objects. In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold cleaved edge overgrowth structure, the photoluminescence spetrum of an individual quantum dot exhibits a single sharp line (full width at half maximum denomination "artificial atoms" for the quantum dots. It is further demonstrated that an "artifical molecule", characterized by the existence of bonding and antibonding states can be assembled from two of such "artificial atoms". The coupling strength between the "artificial atoms" is adjusted by the "interatomic" distance and is reflected in the energetic separation of the bonding and antibonding levels and the linewidths of the corresponding interband transitions.

  18. Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherence

    International Nuclear Information System (INIS)

    Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.

    2003-01-01

    We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity

  19. Gate-defined quantum dots in intrinsic silicon.

    Science.gov (United States)

    Angus, Susan J; Ferguson, Andrew J; Dzurak, Andrew S; Clark, Robert G

    2007-07-01

    We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.

  20. A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

    International Nuclear Information System (INIS)

    Tagliaferri, M.L.V.; Crippa, A.; De Michielis, M.; Mazzeo, G.; Fanciulli, M.; Prati, E.

    2016-01-01

    We report on the fabrication and the characterization of a tunable complementary-metal oxide semiconductor (CMOS) system consisting of two quantum dots and a MOS single electron transistor (MOSSET) charge sensor. By exploiting a compact T-shaped design and few gates fabricated by electron beam lithography, the MOSSET senses the charge state of either a single or double quantum dot at 4.2 K. The CMOS compatible fabrication process, the simplified control over the number of quantum dots and the scalable geometry make such architecture exploitable for large scale fabrication of multiple spin-based qubits in circuital quantum information processing. - Highlights: • Charge sensing of tunable, by position and number, quantum dots is demonstrated. • A compact T-shaped design with five gates at a single metalization level is proposed. • The electrometer is a silicon-etched nanowire acting as a disorder tolerant MOSSET.

  1. A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

    Energy Technology Data Exchange (ETDEWEB)

    Tagliaferri, M.L.V., E-mail: marco.tagliaferri@mdm.imm.cnr.it [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano (Italy); Crippa, A. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano (Italy); De Michielis, M. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Mazzeo, G.; Fanciulli, M. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano (Italy); Prati, E. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Istituto di Fotonica e Nanotecnologie, CNR, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2016-03-11

    We report on the fabrication and the characterization of a tunable complementary-metal oxide semiconductor (CMOS) system consisting of two quantum dots and a MOS single electron transistor (MOSSET) charge sensor. By exploiting a compact T-shaped design and few gates fabricated by electron beam lithography, the MOSSET senses the charge state of either a single or double quantum dot at 4.2 K. The CMOS compatible fabrication process, the simplified control over the number of quantum dots and the scalable geometry make such architecture exploitable for large scale fabrication of multiple spin-based qubits in circuital quantum information processing. - Highlights: • Charge sensing of tunable, by position and number, quantum dots is demonstrated. • A compact T-shaped design with five gates at a single metalization level is proposed. • The electrometer is a silicon-etched nanowire acting as a disorder tolerant MOSSET.

  2. Pulse train amplification and regeneration based on semiconductor quantum dots waveguide

    DEFF Research Database (Denmark)

    Chen, Yaohui; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....

  3. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

  4. Spin current through quantum-dot spin valves

    International Nuclear Information System (INIS)

    Wang, J; Xing, D Y

    2006-01-01

    We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

  5. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

    2017-08-31

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  6. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    International Nuclear Information System (INIS)

    Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

    2017-01-01

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  7. On-chip quantum optics with quantum dots and superconducting resonators

    Science.gov (United States)

    Deng, Guang-Wei; Guo, Guo-Ping; Guo, Guang-Can

    2016-11-01

    Benefit from the recent nanotechnology process, people can integrate different nanostructures on a single chip. Particularly, quantum dots (QD), which behave as artificial atoms, have been shown to couple with a superconducting resonator, indicating that quantum-dot based quantum chip has a highly scalable possibility. Here we show a quantum chip architecture by combining graphene quantum dots and superconducting resonators together. A double quantum dot (DQD) and a microwave hybrid system can be described by the Jaynes-Cummings model, while a multi-quantum-dots system is conformed to the Tavis-Cummings model. These simple quantum optics models are experimentally realized in our device, providing a compelling platform for both graphene study and potential applications.

  8. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  9. Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Schneider, C.; Stobbe, Søren

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  10. Quantum phase transition of light as a control of the entanglement between interacting quantum dots

    NARCIS (Netherlands)

    Barragan, Angela; Vera-Ciro, Carlos; Mondragon-Shem, Ian

    We study coupled quantum dots arranged in a photonic crystal, interacting with light which undergoes a quantum phase transition. At the mean-field level for the infinite lattice, we compute the concurrence of the quantum dots as a measure of their entanglement. We find that this quantity smoothly

  11. Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience

    Science.gov (United States)

    Pathak, Smita

    Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to

  12. A triple quantum dot based nano-electromechanical memory device

    International Nuclear Information System (INIS)

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-01-01

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM

  13. Rabi oscillations a quantum dot exposed to quantum light

    International Nuclear Information System (INIS)

    Magyarov, A.; Slepyan, G.Ya.; Maksimenko, S.A.; Hoffmann, A.

    2007-01-01

    The influence of the local field on the excitonic Rabi oscillations in an isolated quantum dot driven by the coherent state of light has been theoretically investigated. Local field is predicted to entail the appearance of two oscillatory regimes in the Rabi effect separated by the bifurcation. In the first regime Rabi oscillations are periodic and do not reveal collapse-revivals phenomenon, while in the second one collapse and revivals appear, showing significant difference as compared to those predicted by the standard Jaynes-Cummings model

  14. Microwave-assisted photocatalysis of neurotoxin compounds using metal oxides quantum dots/nanosheets composites: Photocorrosion inhibition, reusability and antibacterial activity studies.

    Science.gov (United States)

    Fakhri, Ali; Azad, Mona; Fatolahi, Leila; Tahami, Shiva

    2018-01-01

    Water pollution caused by different pollutants is one of the challenging tasks for the scientific community. We have prepared and characterized a material for removal of pollutant compounds. ZnO quantum dots decorated CuO nanosheets and TiO 2 quantum dots decorated WO 3 nanosheets composites have been prepared using a hydrothermal method. The as synthesized catalysts were characterized by various techniques. The crystallite sizes of CuO NSs and WO 3 NSs were to be obtained 12.5 and 13.25nm and when dopped with ZnO and TiO 2 size reduces to 3.2 and 3.9nm, respectively. The energy band gap of the CuO NSs, WO 3 NSs, ZnO QDs/CuO NSs and TiO 2 QDs/WO 3 NSs composite are calculated to be 2.01, 2.61, 1.86 and 2.32eV, respectively. The prepared catalysts are efficiently utilized for the photocatalytic degradation of two neurotoxin compounds under UV and UV coupled with microwave irradiation. The prepared catalyst composites reveal excellent photocatalytic degradation of neurotoxin compound by degrading it up to 75% under UV and UV/microwave irradiation. The photocalysis efficiency in UV/microwave system is higher than UV system. The result shows that the ZnO QDs/CuO NSs and TiO 2 QDs/WO 3 NSs composites have excellent photocorrosion inhibition and reusability properties. Thus, prepared samples with positive surface potential upon interaction with negative surface potential of Enterococcus faecalis and Micrococcus luteus. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    International Nuclear Information System (INIS)

    Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskiy, V. V.; Putyato, M. A.; Semyagin, B. R.

    2013-01-01

    Electron microscopy studies of GaAs-based structures grown by molecular beam epitaxy and containing arrays of semiconductor InAs quantum dots and metal As quantum dots are performed. The array of InAs quantum dots is formed by the Stranski-Krastanov mechanism and consists of vertically coupled pairs of quantum dots separated by a GaAs spacer 10 nm thick. To separate the arrays of semiconductor and metal quantum dots and to prevent diffusion-induced mixing, the array of InAs quantum dots is overgrown with an AlAs barrier layer 5 or 10 nm thick, after which a GaAs layer is grown at a comparatively low temperature (180°C). The array of As quantum dots is formed in an As-enriched layer of the low-temperature GaAs by means of post-growth annealing at 400–760°C for 15 min. It is established that the AlAs barrier layer has a surface profile corresponding to that of a subbarrier layer with InAs quantum dots. The presence of such a profile causes the formation of V-shaped structural defects upon subsequent overgrowth with the GaAs layer. Besides, it was obtained that AlAs layer is thinned over the InAs quantum dots tops. It is shown that the AlAs barrier layer in the regions between the InAs quantum dots effectively prevents the starting diffusion of excess As at annealing temperatures up to 600°C. However, the concentration of mechanical stresses and the reduced thickness of the AlAs barrier layer near the tops of the InAs quantum dots lead to local barrier breakthroughs and the diffusion of As quantum dots into the region of coupled pairs of InAs quantum dots at higher annealing temperatures

  16. Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ian D. Tomlinson

    2007-01-01

    Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.

  17. Study of a Quantum Dot in an Excited State

    Science.gov (United States)

    Slamet, Marlina; Sahni, Viraht

    We have studied the first excited singlet state of a quantum dot via quantal density functional theory (QDFT). The quantum dot is represented by a 2D Hooke's atom in an external magnetostatic field. The QDFT mapping is from an excited singlet state of this interacting system to one of noninteracting fermions in a singlet ground state. The results of the study will be compared to (a) the corresponding mapping from a ground state of the quantum dot and (b) to the similar mapping from an excited singlet state of the 3D Hooke's atom.

  18. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    Science.gov (United States)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  19. Intrinsic quantum dots in InAs nanowires

    International Nuclear Information System (INIS)

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  20. Characterization of graphene quantum dot hybrid structures

    Science.gov (United States)

    Chung, Ting-Fung; Hu, Jiuning; Jauregui, Luis A.; Chen, Liangliang; Zhao, Qing; Ruan, Xiulin; Chen, Yong P.

    2012-02-01

    We report electrical transport, photo-electric response and Raman spectroscopy measurements in macroscopic samples of graphene decorated with inorganic quantum dots (CdSe QDs). QDs are deposited on chemical vapor deposition (CVD) graphene by spin-coating. Raman measurements of graphene decorated with QDs on Si wafer show very similar spectra with clear G and 2D peaks that reveal no degradation of graphene during the QDs deposition process. Furthermore, two types of device architectures (QDs-graphene and graphene-QDs-graphene) are fabricated with graphene as a transparent electrode and QD as a light absorbent for electrical photoresponse characterization. Upon application of either a broadband light source or a 532-nm monochromatic laser source, graphene-QDs-graphene devices demonstrate photoconducting response, but not in the case of QDs-graphene devices.

  1. Tellurium quantum dots: Preparation and optical properties

    Science.gov (United States)

    Lu, Chaoyu; Li, Xueming; Tang, Libin; Lai, Sin Ki; Rogée, Lukas; Teng, Kar Seng; Qian, Fuli; Zhou, Liangliang; Lau, Shu Ping

    2017-08-01

    Herein, we report an effective and simple method for producing Tellurium Quantum dots (TeQDs), zero-dimensional nanomaterials with great prospects for biomedical applications. Their preparation is based on the ultrasonic exfoliation of Te powder dispersed in 1-methyl-2-pyrrolidone. Sonication causes the van der Waals forces between the structural hexagons of Te to break so that the relatively coarse powder breaks down into nanoscale particles. The TeQDs have an average size of about 4 nm. UV-Vis absorption spectra of the TeQDs showed an absorption peak at 288 nm. Photoluminescence excitation (PLE) and photoluminescence (PL) are used to study the optical properties of TeQDs. Both the PLE and PL peaks revealed a linear relationship against the emission and excitation energies, respectively. TeQDs have important potential applications in biological imaging and catalysis as well as optoelectronics.

  2. Quantum dots: synthesis, bioapplications, and toxicity

    Science.gov (United States)

    Valizadeh, Alireza; Mikaeili, Haleh; Samiei, Mohammad; Farkhani, Samad Mussa; Zarghami, Nosratalah; kouhi, Mohammad; Akbarzadeh, Abolfazl; Davaran, Soodabeh

    2012-08-01

    This review introduces quantum dots (QDs) and explores their properties, synthesis, applications, delivery systems in biology, and their toxicity. QDs are one of the first nanotechnologies to be integrated with the biological sciences and are widely anticipated to eventually find application in a number of commercial consumer and clinical products. They exhibit unique luminescence characteristics and electronic properties such as wide and continuous absorption spectra, narrow emission spectra, and high light stability. The application of QDs, as a new technology for biosystems, has been typically studied on mammalian cells. Due to the small structures of QDs, some physical properties such as optical and electron transport characteristics are quite different from those of the bulk materials.

  3. Electronic levels of cubic quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Aristone, Flavio [Federal De Mato Grosso Do Sul Univ., Campo Grande (Brazil); Sanchez-Dehesa, Jose [Autonoma De Madrid Univ., Madrid (Spain); Marques, Gilmar E. [Federal De Sao Carlos Univ., Sao Carlos (Brazil)

    2003-09-01

    We introduce an efficient variational method to solve the three-dimensional Schroedinger equation for any arbitrary potential V(x,y,z). The method uses a basis set of localized functions which are build up as products of one-dimensional cubic {beta}-splines. We calculated the energy levels of GaAs/AlGaAs cubic quantum dots and make a comparison with the results from two well-known simplification schemes based on a decomposition of the full potential problem into three separate one-dimensional problems. We show that the scheme making a sequential decomposition gives eigenvalues in better agreement with the ones obtained variationally, but an exact solution is necessary when looking for highly precise values.

  4. Protease-activated quantum dot probes

    International Nuclear Information System (INIS)

    Chang, Emmanuel; Miller, Jordan S.; Sun, Jiantang; Yu, William W.; Colvin, Vicki L.; Drezek, Rebekah; West, Jennifer L.

    2005-01-01

    We have developed a novel nanoparticulate luminescent probe with inherent signal amplification upon interaction with a targeted proteolytic enzyme. This construct may be useful for imaging in cancer detection and diagnosis. In this system, quantum dots (QDs) are bound to gold nanoparticles (AuNPs) via a proteolytically degradable peptide sequence to non-radiatively suppress luminescence. A 71% reduction in luminescence was achieved with conjugation of AuNPs to QDs. Release of AuNPs by peptide cleavage restores radiative QD photoluminescence. Initial studies observed a 52% rise in luminescence over 47 h of exposure to 0.2 mg/mL collagenase. These probes can be customized for targeted degradation simply by changing the sequence of the peptide linker

  5. Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots

    Directory of Open Access Journals (Sweden)

    Altaisky Mikhail V.

    2016-01-01

    Full Text Available We present the results of the simulation of a quantum neural network based on quantum dots using numerical method of path integral calculation. In the proposed implementation of the quantum neural network using an array of single-electron quantum dots with dipole-dipole interaction, the coherence is shown to survive up to 0.1 nanosecond in time and up to the liquid nitrogen temperature of 77K.We study the quantum correlations between the quantum dots by means of calculation of the entanglement of formation in a pair of quantum dots on the GaAs based substrate with dot size of 100 ÷ 101 nanometer and interdot distance of 101 ÷ 102 nanometers order.

  6. Optimal tunneling enhances the quantum photovoltaic effect in double quantum dots

    International Nuclear Information System (INIS)

    Wang, Chen; Cao, Jianshu; Ren, Jie

    2014-01-01

    We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices

  7. First principles study of edge carboxylated graphene quantum dots

    Science.gov (United States)

    Abdelsalam, Hazem; Elhaes, Hanan; Ibrahim, Medhat A.

    2018-05-01

    The structure stability and electronic properties of edge carboxylated hexagonal and triangular graphene quantum dots are investigated using density functional theory. The calculated binding energies show that the hexagonal clusters with armchair edges have the highest stability among all the quantum dots. The binding energy of carboxylated graphene quantum dots increases by increasing the number of carboxyl groups. Our study shows that the total dipole moment significantly increases by adding COOH with the highest value observed in triangular clusters. The edge states in triangular graphene quantum dots with zigzag edges produce completely different energy spectrum from other dots: (a) the energy gap in triangular zigzag is very small as compared to other clusters and (b) the highest occupied molecular orbital is localized at the edges which is in contrast to other clusters where it is distributed over the cluster surface. The enhanced reactivity and the controllable energy gap by shape and edge termination make graphene quantum dots ideal for various nanodevice applications such as sensors. The infrared spectra are presented to confirm the stability of the quantum dots.

  8. Depletion-mode quantum dots in intrinsic silicon

    Science.gov (United States)

    Amitonov, Sergey V.; Spruijtenburg, Paul C.; Vervoort, Max W. S.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

    2018-01-01

    We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO2/Al2O3 dielectric stack to induce a 2DHG at the Si/SiO2 interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment and allows us to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO2/Al2O3 dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.

  9. Collective Rabi dynamics of electromagnetically coupled quantum-dot ensembles

    Science.gov (United States)

    Glosser, Connor; Shanker, B.; Piermarocchi, Carlo

    2017-09-01

    Rabi oscillations typify the inherent nonlinearity of optical excitations in quantum dots. Using an integral kernel formulation to solve the three-dimensional Maxwell-Bloch equations in ensembles of up to 104 quantum dots, we observe features in Rabi oscillations due to the interplay of nonlinearity, nonequilibrium excitation, and electromagnetic coupling between the dots. This approach allows us to observe the dynamics of each dot in the ensemble without resorting to spatial averages. Our simulations predict synchronized multiplets of dots that exchange energy, dots that dynamically couple to screen the effect of incident external radiation, localization of the polarization due to randomness and interactions, as well as wavelength-scale regions of enhanced and suppressed polarization.

  10. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    Lin Wen

    2017-07-01

    Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  11. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

    Science.gov (United States)

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-07-28

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  12. Electron Transport through Single and Multiple Quantum Dots : The Formation of a One-Dimensional Bandstructure

    NARCIS (Netherlands)

    Wees, B.J. van; Kouwenhoven, L.P.; Enden, A. van der; Harmans, C.J.P.M.

    1991-01-01

    We describe transport experiments performed on ballistic submicron devices which are defined in the two dimensional electron gas of GaAs/AlGaAs heterostructures by means of metallic gates. Conductance measurements on single quantum dots reveal the formation of magnetically induced zero-dimensional

  13. Nodal ground states and orbital textures in semiconductor quantum dots

    Czech Academy of Sciences Publication Activity Database

    Lee, J.; Výborný, Karel; Han, J.E.; Žutič, I.

    2014-01-01

    Roč. 89, č. 4 (2014), "045315-1"-"045315-17" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dots * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  14. Nonequilibrium electron transport through quantum dots in the Kondo regime

    DEFF Research Database (Denmark)

    Wölfle, Peter; Paaske, Jens; Rosch, Achim

    2005-01-01

    Electron transport at large bias voltage through quantum dots in the Kondo regime is described within the perturbative renormalization group extended to nonequilibrium. The conductance, local magnetization, dynamical spin susceptibility and local spectral function are calculated. We show how the ...

  15. Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)

    International Nuclear Information System (INIS)

    Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle

    2006-01-01

    We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results

  16. A fabrication guide for planar silicon quantum dot heterostructures

    Science.gov (United States)

    Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

    2018-04-01

    We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

  17. Coal as an abundant source of graphene quantum dots

    Science.gov (United States)

    Ye, Ruquan; Xiang, Changsheng; Lin, Jian; Peng, Zhiwei; Huang, Kewei; Yan, Zheng; Cook, Nathan P.; Samuel, Errol L. G.; Hwang, Chih-Chau; Ruan, Gedeng; Ceriotti, Gabriel; Raji, Abdul-Rahman O.; Martí, Angel A.; Tour, James M.

    2013-12-01

    Coal is the most abundant and readily combustible energy resource being used worldwide. However, its structural characteristic creates a perception that coal is only useful for producing energy via burning. Here we report a facile approach to synthesize tunable graphene quantum dots from various types of coal, and establish that the unique coal structure has an advantage over pure sp2-carbon allotropes for producing quantum dots. The crystalline carbon within the coal structure is easier to oxidatively displace than when pure sp2-carbon structures are used, resulting in nanometre-sized graphene quantum dots with amorphous carbon addends on the edges. The synthesized graphene quantum dots, produced in up to 20% isolated yield from coal, are soluble and fluorescent in aqueous solution, providing promise for applications in areas such as bioimaging, biomedicine, photovoltaics and optoelectronics, in addition to being inexpensive additives for structural composites.

  18. Ge Quantum Dot Infrared Imaging Camera, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large...

  19. Non-Markovian spontaneous emission from a single quantum dot

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg; Ates, Serkan; Lund-Hansen, Toke

    2011-01-01

    We observe non-Markovian dynamics of a single quantum dot when tuned into resonance with a cavity mode. Excellent agreement between experiment and theory is observed providing the first quantitative description of such a system....

  20. Quantum dot conjugates in a sub-micrometer fluidic channel

    Science.gov (United States)

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  1. The impact of doped silicon quantum dots on human osteoblasts

    Czech Academy of Sciences Publication Activity Database

    Ostrovská, L.; Brož, Antonín; Fučíková, A.; Bělinová, T.; Sugimoto, H.; Kanno, T.; Fujii, M.; Valenta, J.; Kalbáčová, M.H.

    2016-01-01

    Roč. 6, č. 68 (2016), s. 63403-63413 ISSN 2046-2069 Institutional support: RVO:67985823 Keywords : silicon quantum dots * osteoblasts * cytotoxicity * photoluminiscence bioimaging Subject RIV: EI - Biotechnology ; Bionics Impact factor: 3.108, year: 2016

  2. CdS/CdSSe quantum dots in glass matrix

    Indian Academy of Sciences (India)

    Wintec

    –5 nm are uniformly distributed into the glass matrix. Keywords. CdS; CdSSe; nanocrystals; glasses; optical filters. 1. Introduction. Today nanostructured materials and quantum dots have immense importance in the field of optoelectronics and.

  3. Quantum Dots in the Therapy: Current Trends and Perspectives.

    Science.gov (United States)

    Pohanka, Miroslav

    2017-01-01

    Quantum dots are an emerging nanomaterial with broad use in technical disciplines; however, their application in the field of biomedicine becomes also relevant and significant possibilities have appeared since the discovery in 1980s. The current review is focused on the therapeutic applications of quantum dots which become an emerging use of the particles. They are introduced as potent carriers of drugs and as a material well suited for the diagnosis of disparate pathologies like visualization of cancer cells or pathogenic microorganisms. Quantum dots toxicity and modifications for the toxicity reduction are discussed here as well. Survey of actual papers and patents in the field of quantum dots use in the biomedicine is provided. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  4. Multiple Wavelength Quantum Dot Lasers (MW-QDL)

    Data.gov (United States)

    National Aeronautics and Space Administration — An innovative method to achieve optical gain over a wide spectral range using new laser materials is being investigated.  Multiple wavelength quantum dot lasers...

  5. Electron Energy Level Statistics in Graphene Quantum Dots

    NARCIS (Netherlands)

    De Raedt, H.; Katsnellson, M. I.; Katsnelson, M.I.

    2008-01-01

    Motivated by recent experimental observations of size quantization of electron energy levels in graphene quantum dots [7] we investigate the level statistics in the simplest tight-binding model for different dot shapes by computer simulation. The results are in a reasonable agreement with the

  6. Ultrafast gain and index dynamics in quantum dot amplifiers

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    1999-01-01

    The ultrafast dynamics of gain and refractive index in an InAs/GaAs quantum dot amplifier are investigated at room temperature. The gain is observed to recover with a 90 fs time constant, ruling out problems of slow carrier capture into the dots, and making this component promising for high...

  7. On dephasing and spin decay in open quantum dots

    NARCIS (Netherlands)

    Michaelis, Björn Dieter

    2006-01-01

    The thesis contains three topics on transport in nanostructres. Chpt. 2 explains the loss of entanglement in electronic pairs that enter chaotic quantum dots. The quantitiy that is affected are timedependent and spaceresolving current measurements. Looking at statisticcs dots, it is discovered

  8. Quantum computation: algorithms and implementation in quantum dot devices

    Science.gov (United States)

    Gamble, John King

    In this thesis, we explore several aspects of both the software and hardware of quantum computation. First, we examine the computational power of multi-particle quantum random walks in terms of distinguishing mathematical graphs. We study both interacting and non-interacting multi-particle walks on strongly regular graphs, proving some limitations on distinguishing powers and presenting extensive numerical evidence indicative of interactions providing more distinguishing power. We then study the recently proposed adiabatic quantum algorithm for Google PageRank, and show that it exhibits power-law scaling for realistic WWW-like graphs. Turning to hardware, we next analyze the thermal physics of two nearby 2D electron gas (2DEG), and show that an analogue of the Coulomb drag effect exists for heat transfer. In some distance and temperature, this heat transfer is more significant than phonon dissipation channels. After that, we study the dephasing of two-electron states in a single silicon quantum dot. Specifically, we consider dephasing due to the electron-phonon coupling and charge noise, separately treating orbital and valley excitations. In an ideal system, dephasing due to charge noise is strongly suppressed due to a vanishing dipole moment. However, introduction of disorder or anharmonicity leads to large effective dipole moments, and hence possibly strong dephasing. Building on this work, we next consider more realistic systems, including structural disorder systems. We present experiment and theory, which demonstrate energy levels that vary with quantum dot translation, implying a structurally disordered system. Finally, we turn to the issues of valley mixing and valley-orbit hybridization, which occurs due to atomic-scale disorder at quantum well interfaces. We develop a new theoretical approach to study these effects, which we name the disorder-expansion technique. We demonstrate that this method successfully reproduces atomistic tight-binding techniques

  9. Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

    KAUST Repository

    Debnath, Ratan

    2010-01-01

    With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface. © 2010 American Institute of Physics.

  10. Controlling the quantum dot nucleation site

    International Nuclear Information System (INIS)

    Motta, Nunzio; Sgarlata, Anna; Rosei, Federico; Szkutnik, P.D.; Nufris, S.; Scarselli, M.; Balzarotti, A.

    2003-01-01

    Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of semiconductors. In order to exploit the unique electronic properties of semiconductor QDs in novel quantum effect devices, the lateral dimensions of these structures have to be reduced to the order of tens of nanometers, which is the range of the De Broglie wavelength of electrons inside these materials. Moreover, millions of QDs must be arranged in dense ordered arrays to achieve the necessary active volume for optoelectronic applications. Nowadays it is possible to control size and shape of the nanocrystals, but it is still difficult to decide their nucleation site. Many approaches have been undertaken to overcome this problem, like using regular dislocation networks, lithographically and Atomic Force Microscopy (AFM) patterned substrates, naturally patterned surfaces. We present results obtained by some of these methods, visualized by Scanning Tunnelling Microscopy (STM) or AFM microscopy. STM measurements at high temperature during the epitaxial growth are of great help in these studies. Images and movies of the growth of Ge on Si help to identify the real nucleation sites of the islands and to follow their evolution. The influence of the 'step bunching' on the self-organization of Ge islands on Si(111) surfaces will be analysed, as an example of growth on self-nanostructured surfaces

  11. Bismides: 2D structures and quantum dots

    Science.gov (United States)

    Pačebutas, Vaidas; Butkutė, Renata; Čechavičius, Bronislovas; Stanionytė, Sandra; Pozingytė, Evelina; Skapas, Martynas; Selskis, Algirdas; Geižutis, Andrejus; Krotkus, Arūnas

    2017-09-01

    The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treating on structural and luminescent properties of QWs is discussed. The complex structural investigations using x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy revealed high crystal structure, smooth surfaces and abrupt interfaces of both GaAsBi and GaInAsBi QWs. The temperature dependent photoluminescence measurements demonstrated emission wavelengths up to 1.43 µm in room temperature PL spectra measured for GaAsBi/GaAs QWs containing 12% Bi, whereas GaInAsBi QWs with 4.2% of bismuth inserted between GaAs barriers has reached 1.25 µm. Moreover, the annealing at high temperatures of GaAsBi/AlAs QWs stimulated agglomeration of bismuth to quantum dots in the well layers, emitting at 1.5 µm. The achieved wavelengths are the longest ones declared for the GaAsBi and GaInAsBi QW structures grown on the GaAs substrate, therefore bismide-based QWs are the promising structures for applications in infrared devices.

  12. Cyto-molecular Tuning of Quantum Dots

    Science.gov (United States)

    Lee, Bong; Suresh, Sindhuja; Ekpenyong, Andrew

    Quantum dots (QDs) are semiconductor nanoparticles composed of groups II-VI or III-V elements, with physical dimensions smaller than the exciton Bohr radius, and between 1-10 nm. Their applications and promising myriad applications in photovoltaic cells, biomedical imaging, targeted drug delivery, quantum computing, etc, have led to much research on their interactions with other systems. For biological systems, research has focused on biocompatibility and cytotoxicity of QDs in the context of imaging/therapy. However, there is a paucity of work on how biological systems might be used to tune QDs. Here, we hypothesize that the photo-electronic properties of QDs can be tuned by biological macromolecules following controlled changes in cellular activities. Using CdSe/ZnS core-shell QDs, we perform spectroscopic analysis of optically excited colloidal QDs with and without promyelocytic HL60 cells. Preliminary results show shifts in the emission spectra of the colloidal dispersions with and without cells. We will present results for activated HL60-derived cells where specific macromolecules produced by these cells perturb the electric dipole moments of the excited QDs and the associated electric fields, in ways that constitute what we describe as cyto-molecular tuning. Startup funds from the College of Arts and Sciences, Creighton University (to AEE).

  13. Interaction of solitons with a string of coupled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vijendra, E-mail: vsmedphysics@gmail.com; Swami, O. P., E-mail: omg1789@gmail.com; Nagar, A. K., E-mail: ajaya.nagar@gmail.com [Department of Physics, Govt. Dungar College, Bikaner, Rajasthan 334001 (India); Taneja, S., E-mail: sachintaneja9@gmail.com [Department of Radiotherapy, CHAF Bangalore, Karnataka 560007 (India)

    2016-05-06

    In this paper, we develop a theory for discrete solitons interaction with a string of coupled quantum dots in view of the local field effects. Discrete nonlinear Schrodinger (DNLS) equations are used to describe the dynamics of the string. Numerical calculations are carried out and results are analyzed with the help of matlab software. With the help of numerical solutions we demonstrate that in the quantum dots string, Rabi oscillations (RO) are self trapped into stable bright Rabi solitons. The Rabi oscillations in different types of nanostructures have potential applications to the elements of quantum logic and quantum memory.

  14. Spin-orbit-enhanced Wigner localization in quantum dots

    DEFF Research Database (Denmark)

    Cavalli, Andrea; Malet, F.; Cremon, J. C.

    2011-01-01

    We investigate quantum dots with Rashba spin-orbit coupling in the strongly-correlated regime. We show that the presence of the Rashba interaction enhances the Wigner localization in these systems, making it achievable for higher densities than those at which it is observed in Rashba-free quantum...... dots. Recurring shapes in the pair distribution functions of the yrast spectrum, which might be associated with rotational and vibrational modes, are also reported....

  15. Solution-Processed Nanocrystal Quantum Dot Tandem Solar Cells

    KAUST Repository

    Choi, Joshua J.

    2011-06-03

    Solution-processed tandem solar cells created from nanocrystal quantum dots with size-tuned energy levels are demonstrated. Prototype devices featuring interconnected quantum dot layers of cascaded energy gaps exhibit IR sensitivity and an open circuit voltage, V oc, approaching 1 V. The tandem solar cell performance depends critically on the optical and electrical properties of the interlayer. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Self-Sustaining Dynamical Nuclear Polarization Oscillations in Quantum Dots

    DEFF Research Database (Denmark)

    Rudner, Mark Spencer; Levitov, Leonid

    2013-01-01

    Early experiments on spin-blockaded double quantum dots revealed robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias. Despite experimental evidence implicating dynamical nuclear polarization, the mechanism has remained a mystery. Here we introduce......) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The proposed framework naturally explains the differences in phenomenology between vertical and lateral quantum dot structures as well as the extremely long oscillation periods....

  17. On-chip generation and guiding of quantum light from a site-controlled quantum dot

    International Nuclear Information System (INIS)

    Jamil, Ayesha; Farrer, Ian; Griffiths, Jonathan P.; Jones, Geb A. C.; Ritchie, David A.; Skiba-Szymanska, Joanna; Kalliakos, Sokratis; Ward, Martin B.; Ellis, David J. P.; Shields, Andrew J.; Schwagmann, Andre; Brody, Yarden

    2014-01-01

    We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device–scale arrays of quantum dots are formed by a two–step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the waveguide's exit is 12% ± 5% before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits

  18. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  19. Charge Effect on the Quantum Dots-Peptide Self-Assembly Using Fluorescence Coupled Capillary Electrophoresis.

    Science.gov (United States)

    Wang, Jianhao; Li, Jingyan; Teng, Yiwan; Bi, Yanhua; Hu, Wei; Li, Jinchen; Wang, Cheli; Qiu, Lin; Jiang, Pengju

    2016-04-01

    We present a molecular characterization of metal-affinity driven self-assembly between CdSe-ZnS quantum dots and a series of hexahistidine peptides with different charges. In particular, we uti- lized fluorescence coupled capillary electrophoresis to test the self-assembly process of quantum dots with peptides in solution. Four peptides with different charges can be efficiently separated by fluorescence coupled capillary electrophoresis. The migration time appeared to be influenced by the charges of the peptide. In addition, the kinetics of self-assembly process of quantum dots with one of the peptides manifested a bi-phasic kinetics followed by a saturating stage. This work revealed that there exist two types of binding sites on the surface of quantum dots for peptide 1: one type termed "high priority" binding site and a "low priority" site which is occupied after the first binding sites are fully occupied. The total self-assembly process finishes in solution within 80 s. Our work represents the systematic investigation of the details of self-assembly kinetics utilizing high-resolution fluorescence coupled capillary electrophoresis. The charge effect of peptide coating quantum dots provides a new way of preparing bioprobes.

  20. Enhanced thermoelectric properties in boron nitride quantum-dot

    Science.gov (United States)

    Pan, Changning; Long, Mengqiu; He, Jun

    We have investigated the ballistic thermoelectric properties in boron nitride quantum dots by using the nonequilibrium Green's function approach and the Landauer transport theory. The result shows that the phonon transport is substantially suppressed by the interface in the quantum dots. The resonant tunneling effect of electron leads to the fluctuations of the electronic conductance. It enhances significantly the Seebeck coefficient. Combined with the low thermal conductance of phonon, the high thermoelectric figure of merit ZT ∼0.78 can be obtained at room temperature T = 300 K and ZT ∼0.95 at low temperature T = 100 K. It is much higher than that of graphene quantum dots with the same geometry parameters, which is ZT ∼0.29 at room temperature T = 300 K and ZT ∼0.48 at low temperature T = 100 K. The underlying mechanism is that the boron nitride quantum dots possess higher thermopower and lower phonon thermal conductance than the graphene quantum dots. Thus the results indicate that the thermoelectric properties of boron nitride can be significantly enhanced by the quantum dot and are better than those of graphene.

  1. Colloidal quantum dot photovoltaics: The effect of polydispersity

    KAUST Repository

    Zhitomirsky, David

    2012-02-08

    The size-effect tunability of colloidal quantum dots enables facile engineering of the bandgap at the time of nanoparticle synthesis. The dependence of effective bandgap on nanoparticle size also presents a challenge if the size dispersion, hence bandgap variability, is not well-controlled within a given quantum dot solid. The impact of this polydispersity is well-studied in luminescent devices as well as in unipolar electronic transport; however, the requirements on monodispersity have yet to be quantified in photovoltaics. Here we carry out a series of combined experimental and model-based studies aimed at clarifying, and quantifying, the importance of quantum dot monodispersity in photovoltaics. We successfully predict, using a simple model, the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using this same experimentally tested model the implications of a broadened quantum dot population on device performance. We report that present-day colloidal quantum dot photovoltaic devices with typical inhomogeneous linewidths of 100-150 meV are dominated by surface traps, and it is for this reason that they see marginal benefit from reduction in polydispersity. Upon eliminating surface traps, achieving inhomogeneous broadening of 50 meV or less will lead to device performance that sees very little deleterious impact from polydispersity. © 2012 American Chemical Society.

  2. Heparin conjugated quantum dots for in vitro imaging applications.

    Science.gov (United States)

    Maguire, Ciaran Manus; Mahfoud, Omar Kazem; Rakovich, Tatsiana; Gerard, Valerie Anne; Prina-Mello, Adriele; Gun'ko, Yurii; Volkov, Yuri

    2014-11-01

    In this work heparin-gelatine multi-layered cadmium telluride quantum dots (QDgel/hep) were synthesised using a novel 'one-pot' method. The QDs produced were characterised using various spectroscopic and physiochemical techniques. Suitable QDs were then selected and compared to thioglycolic acid stabilised quantum dots (QDTGA) and gelatine coated quantum dots (QDgel) for utilisation in in vitro imaging experiments on live and fixed permeabilised THP-1, A549 and Caco-2 cell lines. Exposure of live THP-1 cells to QDgel/hep resulted in localisation of the QDs to the nucleus of the cells. QDgel/hep show affinity for the nuclear compartment of fixed permeabilised THP-1 and A549 cells but remain confined to cytoplasm of fixed permeabilised Caco-2 cells. It is postulated that heparin binding to the CD11b receptor facilitates the internalisation of the QDs into the nucleus of THP-1 cells. In addition, the heparin layer may reduce the unfavourable thrombogenic nature of quantum dots observed in vivo. In this study, heparin conjugated quantum dots were found to have superior imaging properties compared to its native counterparts. The authors postulate that heparin binding to the CD11b receptor facilitates QD internalization to the nucleus, and the heparin layer may reduce the in vivo thrombogenic properties of quantum dots. Copyright © 2014 Elsevier Inc. All rights reserved.

  3. Design of quaternary logic circuit using quantum dot gate-quantum dot channel FET (QDG-QDCFET)

    Science.gov (United States)

    Karmakar, Supriya

    2014-10-01

    This paper presents the implementation of quaternary logic circuits based on quantum dot gate-quantum dot channel field effect transistor (QDG-QDCFET). The super lattice structure in the quantum dot channel region of QDG-QDCFET and the electron tunnelling from inversion channel to the quantum dot layer in the gate region of a QDG-QDCFET change the threshold voltage of this device which produces two intermediate states between its ON and OFF states. This property of QDG-QDCFET is used to implement multi-valued logic for future multi-valued logic circuit. This paper presents the design of basic quaternary logic operation such as inverter, AND and OR operation based on QDG-QDCFET.

  4. Microwave-assisted aqueous synthesis of transition metal ions doped ZnSe/ZnS core/shell quantum dots with tunable white-light emission

    International Nuclear Information System (INIS)

    Zhang, Jie; Chen, Qiuhang; Zhang, Wanlu; Mei, Shiliang; He, Liangjie; Zhu, Jiatao; Chen, Guoping; Guo, Ruiqian

    2015-01-01

    Highlights: • ZnSe-based QDs were formed via a microwave-assisted aqueous approach. • The stabilizer, ZnS coats and UV irradiation played a role in the PL enhancement. • Tunable white-light-emitting Mn:ZnSe QDs and Cu,Mn:ZnSe/ZnS QDs were synthesized. • The formation mechanism of Cu,Mn:ZnSe QDs was clarified. • The corresponding CIE color coordinates of different PL spectra were obtained. - Abstract: Synthesis of bright white-light emitting Mn and Cu co-doped ZnSe/ZnS core/shell quantum dots (QDs) (Cu,Mn:ZnSe/ZnS) was reported. Water-soluble ZnSe-based QDs with Mn and Cu doping were prepared using a versatile hot-injection method in aqueous solution with a microwave-assisted approach. Influence of the Se/S ratio, stabilizer, refluxing time and the concentration of Cu/Mn dopant ions on the particle size and photoluminescence (PL) were investigated. The as-prepared QDs in the different stages of growth were characterized by X-ray powder diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), UV–visible (UV–vis) spectrophotometer, and fluorescence spectrophotometer. It is found that these ZnSe-based QDs synthesized under mild conditions exhibit emission in the range of 390–585 nm. The PL quantum yield (QY) of the as-prepared water-soluble ZnSe QDs can be up to 24.3% after the UV-irradiation treatment. The band-gap emission of ZnSe is effectively restrained through Mn and Cu doping. The refluxing time influences the doping of not only Mn, but also Cu, which leads to the best refluxing time of Mn:ZnSe and the red-shift of the emission of Cu:ZnSe d-dots. Co-doping induced white-light emission (WLE) from Cu,Mn:ZnSe/ZnS core/shell QDs were obtained, which can offer the opportunity for future-generation white-light emitting diodes (LEDs)

  5. Microwave-assisted aqueous synthesis of transition metal ions doped ZnSe/ZnS core/shell quantum dots with tunable white-light emission

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jie [Laboratory of Advanced Materials, Fudan University, Shanghai 200438 (China); Chen, Qiuhang; Zhang, Wanlu; Mei, Shiliang; He, Liangjie; Zhu, Jiatao [Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Institute for Electric Light Sources, Fudan University, Shanghai 200433 (China); Chen, Guoping [School of Information Science and Technology, Fudan University, Shanghai 200433 (China); Guo, Ruiqian, E-mail: rqguo@fudan.edu.cn [Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Institute for Electric Light Sources, Fudan University, Shanghai 200433 (China)

    2015-10-01

    Highlights: • ZnSe-based QDs were formed via a microwave-assisted aqueous approach. • The stabilizer, ZnS coats and UV irradiation played a role in the PL enhancement. • Tunable white-light-emitting Mn:ZnSe QDs and Cu,Mn:ZnSe/ZnS QDs were synthesized. • The formation mechanism of Cu,Mn:ZnSe QDs was clarified. • The corresponding CIE color coordinates of different PL spectra were obtained. - Abstract: Synthesis of bright white-light emitting Mn and Cu co-doped ZnSe/ZnS core/shell quantum dots (QDs) (Cu,Mn:ZnSe/ZnS) was reported. Water-soluble ZnSe-based QDs with Mn and Cu doping were prepared using a versatile hot-injection method in aqueous solution with a microwave-assisted approach. Influence of the Se/S ratio, stabilizer, refluxing time and the concentration of Cu/Mn dopant ions on the particle size and photoluminescence (PL) were investigated. The as-prepared QDs in the different stages of growth were characterized by X-ray powder diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), UV–visible (UV–vis) spectrophotometer, and fluorescence spectrophotometer. It is found that these ZnSe-based QDs synthesized under mild conditions exhibit emission in the range of 390–585 nm. The PL quantum yield (QY) of the as-prepared water-soluble ZnSe QDs can be up to 24.3% after the UV-irradiation treatment. The band-gap emission of ZnSe is effectively restrained through Mn and Cu doping. The refluxing time influences the doping of not only Mn, but also Cu, which leads to the best refluxing time of Mn:ZnSe and the red-shift of the emission of Cu:ZnSe d-dots. Co-doping induced white-light emission (WLE) from Cu,Mn:ZnSe/ZnS core/shell QDs were obtained, which can offer the opportunity for future-generation white-light emitting diodes (LEDs)

  6. High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

    Science.gov (United States)

    Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-11-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. Rainbow Emission from an Atomic Transition in Doped Quantum Dots.

    Science.gov (United States)

    Hazarika, Abhijit; Pandey, Anshu; Sarma, D D

    2014-07-03

    Although semiconductor quantum dots are promising materials for displays and lighting due to their tunable emissions, these materials also suffer from the serious disadvantage of self-absorption of emitted light. The reabsorption of emitted light is a serious loss mechanism in practical situations because most phosphors exhibit subunity quantum yields. Manganese-based phosphors that also exhibit high stability and quantum efficiency do not suffer from this problem but in turn lack emission tunability, seriously affecting their practical utility. Here, we present a class of manganese-doped quantum dot materials, where strain is used to tune the wavelength of the dopant emission, extending the otherwise limited emission tunability over the yellow-orange range for manganese ions to almost the entire visible spectrum covering all colors from blue to red. These new materials thus combine the advantages of both quantum dots and conventional doped phosphors, thereby opening new possibilities for a wide range of applications in the future.

  8. Universal parametric correlations of conductance peaks in quantum dots

    International Nuclear Information System (INIS)

    Alhassid, Y.; Attias, H.

    1996-01-01

    We compute the parametric correlation function of the conductance peaks in chaotic and weakly disordered quantum dots in the Coulomb blockade regime and demonstrate its universality upon an appropriate scaling of the parameter. For a symmetric dot we show that this correlation function is affected by breaking time-reversal symmetry but is independent of the details of the channels in the external leads. We derive a new scaling which depends on the eigenfunctions alone and can be extracted directly from the conductance peak heights. Our results are in excellent agreement with model simulations of a disordered quantum dot. copyright 1996 The American Physical Society

  9. Full counting statistics of a single-molecule quantum dot

    Science.gov (United States)

    Dong, Bing; Ding, G. H.; Lei, X. L.

    2013-08-01

    We investigate the full counting statistics of a single quantum dot strongly coupled to a local phonon and weakly tunnel connected to two metallic electrodes. By employing the generalized nonequilibrium Green-function method and the Lang-Firsov transformation, we derive an explicit analytical formula for the cumulant generating function, which makes one able to identify distinctly the elastic and inelastic contributions to the current and zero-frequency shot noise. We find that at zero temperature, the inelastic effect causes upward steps in the current and downward jumps in the noise at the bias voltages corresponding to the opening of the inelastic channels, which are ascribed to the vibration-induced complex dependencies of electronic self-energies on the energy and bias voltage. More interestingly, the Fano factor exhibits oscillatory behavior with increasing bias voltage and its minimum value is observed to be smaller than one-half.

  10. Electronic transient processes and optical spectra in quantum dots for quantum computing

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Zdeněk, Petr; Khás, Zdeněk

    2004-01-01

    Roč. 3, č. 1 (2004), s. 17-25 ISSN 1536-125X R&D Projects: GA AV ČR IAA1010113 Institutional research plan: CEZ:AV0Z1010914 Keywords : depopulation * electronic relaxation * optical spectra * quantum dots * self-assembled quantum dots * upconversion Subject RIV: BE - Theoretical Physics Impact factor: 3.176, year: 2004

  11. Quantitative analysis of quantum dot dynamics and emission spectra in cavity quantum electrodynamics

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg; Lodahl, Peter

    2013-01-01

    -resolved measurements reveal that the actual coupling strength is significantly smaller than anticipated from the spectral measurements and that the quantum dot is rather weakly coupled to the cavity. We suggest that the observed Rabi splitting is due to cavity feeding by other quantum dots and/or multi...

  12. Annealing-induced change in quantum dot chain formation mechanism

    Directory of Open Access Journals (Sweden)

    Tyler D. Park

    2014-12-01

    Full Text Available Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  13. Transport properties of a Kondo dot with a larger side-coupled noninteracting quantum dot

    International Nuclear Information System (INIS)

    Liu, Y S; Fan, X H; Xia, Y J; Yang, X F

    2008-01-01

    We investigate theoretically linear and nonlinear quantum transport through a smaller quantum dot in a Kondo regime connected to two leads in the presence of a larger side-coupled noninteracting quantum dot, without tunneling coupling to the leads. To do this we employ the slave boson mean field theory with the help of the Keldysh Green's function at zero temperature. The numerical results show that the Kondo conductance peak may develop multiple resonance peaks and multiple zero points in the conductance spectrum owing to constructive and destructive quantum interference effects when the energy levels of the large side-coupled noninteracting dot are located in the vicinity of the Fermi level in the leads. As the coupling strength between two quantum dots increases, the tunneling current through the quantum device as a function of gate voltage applied across the two leads is suppressed. The spin-dependent transport properties of two parallel coupled quantum dots connected to two ferromagnetic leads are also investigated. The numerical results show that, for the parallel configuration, the spin current or linear spin differential conductance are enhanced when the polarization strength in the two leads is increased

  14. Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study

    Directory of Open Access Journals (Sweden)

    Stephan Michael

    2016-05-01

    Full Text Available In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. Here, we study the influence of two important quantum-dot material parameters, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density can compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. However, by minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.

  15. A theoretical study of exciton energy levels in laterally coupled quantum dots

    International Nuclear Information System (INIS)

    Barticevic, Z; Pacheco, M; Duque, C A; Oliveira, L E

    2009-01-01

    A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.

  16. Quantum description of nuclear spin cooling in a quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Giedke, Geza; Christ, H.; Cirac, I. [Max-Planck-Institut fuer Quantenoptik, Hans-Kopfermann-Strasse 1, D-85748 Garching (Germany)

    2007-07-01

    We study theoretically the cooling of an ensemble of nuclear spins coupled to the spin of a localized electron in a quantum dot. We obtain a master equation for the state of the nuclear spins interacting with a sequence of polarized electrons that allows to study quantitatively the cooling process including the effect of nuclear spin coherences, which can lead to 'dark states' of the nuclear system in which further cooling is inhibited. We show that the inhomogeneous Knight field mitigates this effect strongly and that the remaining dark state limitations can be overcome by very few shifts of the electron wave function, allowing for cooling far beyond the dark state limit. Numerical integration of the master equation indicates that polarizations larger than 90% can be achieved within a millisecond timescale.

  17. Fabrication of quantum-dot devices in graphene

    Directory of Open Access Journals (Sweden)

    Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu and Koji Ishibashi

    2010-01-01

    Full Text Available We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.

  18. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  19. Suppression of LO phonon scattering in Landau quantized quantum dots

    NARCIS (Netherlands)

    Murdin, B. N.; Hollingworth, A. R.; Kamal-Saadi, M.; Kotitschke, R. T.; Ciesla, C. M.; Pidgeon, C. R.; Findlay, P. C.; Pellemans, H. P. M.; Langerak, Cjgm; Rowe, A. C.; Stradling, R. A.; Gornik, E.

    1999-01-01

    Picosecond time-resolved far-infrared measurements are presented of the scattering between conduction-band states in a doped quasi quantum dot. These states are created by the application of a magnetic field along the growth direction of an InAs/AlSb quantum well. A clear suppression of the cooling

  20. Counted Sb donors in Si quantum dots

    Science.gov (United States)

    Singh, Meenakshi; Pacheco, Jose; Bielejec, Edward; Perry, Daniel; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

    2015-03-01

    Deterministic control over the location and number of donors is critical for donor spin qubits in semiconductor based quantum computing. We have developed techniques using a focused ion beam and a diode detector integrated next to a silicon MOS single electron transistor to gain such control. With the diode detector operating in linear mode, the numbers of ions implanted have been counted and single ion implants have been detected. Poisson statistics in the number of ions implanted have been observed. Transport measurements performed on samples with counted number of implants have been performed and regular coulomb blockade and charge offsets observed. The capacitances to various gates are found to be in agreement with QCAD simulations for an electrostatically defined dot. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  1. Selective targeting of microglia by quantum dots

    Directory of Open Access Journals (Sweden)

    Minami S Sakura

    2012-01-01

    Full Text Available Abstract Background Microglia, the resident immune cells of the brain, have been implicated in brain injury and various neurological disorders. However, their precise roles in different pathophysiological situations remain enigmatic and may range from detrimental to protective. Targeting the delivery of biologically active compounds to microglia could help elucidate these roles and facilitate the therapeutic modulation of microglial functions in neurological diseases. Methods Here we employ primary cell cultures and stereotaxic injections into mouse brain to investigate the cell type specific localization of semiconductor quantum dots (QDs in vitro and in vivo. Two potential receptors for QDs are identified using pharmacological inhibitors and neutralizing antibodies. Results In mixed primary cortical cultures, QDs were selectively taken up by microglia; this uptake was decreased by inhibitors of clathrin-dependent endocytosis, implicating the endosomal pathway as the major route of entry for QDs into microglia. Furthermore, inhibiting mannose receptors and macrophage scavenger receptors blocked the uptake of QDs by microglia, indicating that QD uptake occurs through microglia-specific receptor endocytosis. When injected into the brain, QDs were taken up primarily by microglia and with high efficiency. In primary cortical cultures, QDs conjugated to the toxin saporin depleted microglia in mixed primary cortical cultures, protecting neurons in these cultures against amyloid beta-induced neurotoxicity. Conclusions These findings demonstrate that QDs can be used to specifically label and modulate microglia in primary cortical cultures and in brain and may allow for the selective delivery of therapeutic agents to these cells.

  2. Quantum dot mediated imaging of atherosclerosis

    Energy Technology Data Exchange (ETDEWEB)

    Jayagopal, Ashwath; Haselton, Frederick R [Department of Biomedical Engineering, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States); Su Yanru; Blakemore, John L; Linton, MacRae F; Fazio, Sergio [Department of Medicine, Vanderbilt University School of Medicine, Nashville, TN 37232 (United States)], E-mail: rick.haselton@vanderbilt.edu

    2009-04-22

    The progression of atherosclerosis is associated with leukocyte infiltration within lesions. We describe a technique for the ex vivo imaging of cellular recruitment in atherogenesis which utilizes quantum dots (QD) to color-code different cell types within lesion areas. Spectrally distinct QD were coated with the cell-penetrating peptide maurocalcine to fluorescently-label immunomagnetically isolated monocyte/macrophages and T lymphocytes. QD-maurocalcine bioconjugates labeled both cell types with a high efficiency, preserved cell viability, and did not perturb native leukocyte function in cytokine release and endothelial adhesion assays. QD-labeled monocyte/macrophages and T lymphocytes were reinfused in an ApoE{sup -/-} mouse model of atherosclerosis and age-matched controls and tracked for up to four weeks to investigate the incorporation of cells within aortic lesion areas, as determined by oil red O (ORO) and immunofluorescence ex vivo staining. QD-labeled cells were visible in atherosclerotic plaques within two days of injection, and the two cell types colocalized within areas of subsequent ORO staining. Our method for tracking leukocytes in lesions enables high signal-to-noise ratio imaging of multiple cell types and biomarkers simultaneously within the same specimen. It also has great utility in studies aimed at investigating the role of distinct circulating leukocyte subsets in plaque development and progression.

  3. Exciton coherence in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Sasaki, Masahide; Kujiraoka, Mamiko; Ema, Kazuhiro

    2009-01-01

    The coherent dynamics of excitons in InAs quantum dots (QDs) was investigated in the telecommunication wavelength range using a transient four-wave mixing technique. The sample was fabricated on an InP(311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for obtaining a high S/N in the four-wave mixing measurements, although no high-sensitive heterodyne detection was carried out. The dephasing time and transition dipole moment were precisely estimated from the polarization dependence of signals, taking into account their anisotropic properties. The population lifetimes of the excitons were also measured by using a polarization-dependent pumpprobe technique. A quantitative comparison of these anisotropies demonstrates that in our QDs, non-radiative population relaxation, polarization relaxation and pure dephasing are considerably smaller than the radiative relaxation. A comparison of the results of the four-wave mixing and pump-probe measurements revealed that the pure dephasing could be directly estimated with an accuracy of greater than 0.1 meV by comparing the results of four-wave mixing and pump-probe measurements. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Microwave mediated synthesis of semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Afrasiabi, Roodabeh; Sugunan, Abhilash; Shahid, Robina; Toprak, Muhammet S.; Muhammed, Mamoun [Division of Functional Materials, Royal Institute of Technology (KTH), Stockholm (Sweden)

    2012-07-15

    Colloidal quantum dots (QD) have tuneable optoelectronic properties and can be easily handled by simple solution processing techniques, making them very attractive for a wide range of applications. Over the past decade synthesis of morphology controlled high quality (crystalline, monodisperse) colloidal QDs by thermal decomposition of organometallic precursors has matured and is well studied. Recently, synthesis of colloidal QDs by microwave irradiation as heating source is being studied due to the inherently different mechanisms of heat transfer, when compared to solvent convection based heating. Under microwave irradiation, polar precursor molecules directly absorb the microwave energy and heat up more efficiently. Here we report synthesis of colloidal II-VI semiconductor QDs (CdS, CdSe, CdTe) by microwave irradiation and compare it with conventional synthesis based on convection heating. Our findings show that QD synthesis by microwave heating is more efficient and the chalcogenide precursor strongly absorbs the microwave radiation shortening the reaction time and giving a high reaction yield (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Quantum dot lasers: From promise to high-performance devices

    Science.gov (United States)

    Bhattacharya, P.; Mi, Z.; Yang, J.; Basu, D.; Saha, D.

    2009-03-01

    Ever since self-organized In(Ga)As/Ga(AI)As quantum dots were realized by molecular beam epitaxy, it became evident that these coherently strained nanostructures could be used as the active media in devices. While the expected advantages stemming from three-dimensional quantum confinement were clearly outlined, these were not borne out by the early experiments. It took a very detailed understanding of the unique carrier dynamics in the quantum dots to exploit their full potential. As a result, we now have lasers with emission wavelengths ranging from 0.7 to 1.54 μm, on GaAs, which demonstrate ultra-low threshold currents, near-zero chip and α-factor and large modulation bandwidth. State-of-the-art performance characteristics of these lasers are briefly reviewed. The growth, fabrication and characteristics of quantum dot lasers on silicon substrates are also described. With the incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with Jth=900 A/cm 2. The monolithic integration of the lasers with guided wave modulators on silicon is also described. Finally, the properties of spin-polarized lasers with quantum dot active regions are described. Spin injection of electrons is done with a MnAs/GaAs tunnel barrier. Laser operation at 200 K is demonstrated, with the possibility of room temperature operation in the near future.

  6. Quantum computation in semiconductor quantum dots of electron-spin asymmetric anisotropic exchange

    International Nuclear Information System (INIS)

    Hao Xiang; Zhu Shiqun

    2007-01-01

    The universal quantum computation is obtained when there exists asymmetric anisotropic exchange between electron spins in coupled semiconductor quantum dots. The asymmetric Heisenberg model can be transformed into the isotropic model through the control of two local unitary rotations for the realization of essential quantum gates. The rotations on each qubit are symmetrical and depend on the strength and orientation of asymmetric exchange. The implementation of the axially symmetric local magnetic fields can assist the construction of quantum logic gates in anisotropic coupled quantum dots. This proposal can efficiently use each physical electron spin as a logical qubit in the universal quantum computation

  7. Folded-light-path colloidal quantum dot solar cells.

    KAUST Repository

    Koleilat, Ghada I

    2013-01-01

    Colloidal quantum dot photovoltaics combine low-cost solution processing with quantum size-effect tuning to match absorption to the solar spectrum. Rapid advances have led to certified solar power conversion efficiencies of over 7%. Nevertheless, these devices remain held back by a compromise in the choice of quantum dot film thickness, balancing on the one hand the need to maximize photon absorption, mandating a thicker film, and, on the other, the need for efficient carrier extraction, a consideration that limits film thickness. Here we report an architecture that breaks this compromise by folding the path of light propagating in the colloidal quantum dot solid. Using this method, we achieve a substantial increase in short-circuit current, ultimately leading to improved power conversion efficiency.

  8. Simulating electron spin entanglement in a double quantum dot

    Science.gov (United States)

    Rodriguez-Moreno, M. A.; Hernandez de La Luz, A. D.; Meza-Montes, Lilia

    2011-03-01

    One of the biggest advantages of having a working quantum-computing device when compared with a classical one, is the exponential speedup of calculations. This exponential increase is based on the ability of a quantum system to create and operate on entangled states. In order to study theoretically the entanglement between two electron spins, we simulate the dynamics of two electron spins in an electrostatically-defined double quantum dot with a finite barrier height between the dots. Electrons are initially confined to separated quantum dots. Barrier height is varied and the spin entanglement as a function of this variation is investigated. The evolution of the system is simulated by using a numerical approach for solving the time-dependent Schrödinger equation for two particles. Partially supported by VIEP-BUAP.

  9. Bound state properties of ABC -stacked trilayer graphene quantum dots

    International Nuclear Information System (INIS)

    Xiong, Haonan; Jiang, Wentao; Song, Yipu; Duan, Luming

    2017-01-01

    The few-layer graphene quantum dot provides a promising platform for quantum computing with both spin and valley degrees of freedom. Gate-defined quantum dots in particular can avoid noise from edge disorders. In connection with the recent experimental efforts (Song et al 2016 Nano Lett . 16 6245), we investigate the bound state properties of trilayer graphene (TLG) quantum dots (QDs) through numerical simulations. We show that the valley degeneracy can be lifted by breaking the time reversal symmetry through the application of a perpendicular magnetic field. The spectrum under such a potential exhibits a transition from one group of Landau levels to another group, which can be understood analytically through perturbation theory. Our results provide insight into the transport property of TLG QDs, with possible applications to study of spin qubits and valleytronics in TLG QDs. (paper)

  10. Carbon quantum dots and applications in photocatalytic energy conversion.

    Science.gov (United States)

    Fernando, K A Shiral; Sahu, Sushant; Liu, Yamin; Lewis, William K; Guliants, Elena A; Jafariyan, Amirhossein; Wang, Ping; Bunker, Christopher E; Sun, Ya-Ping

    2015-04-29

    Quantum dots (QDs) generally refer to nanoscale particles of conventional semiconductors that are subject to the quantum-confinement effect, though other nanomaterials of similar optical and redox properties are also named as QDs even in the absence of strictly defined quantum confinement. Among such nanomaterials that have attracted tremendous recent interest are carbon dots, which are small carbon nanoparticles with some form of surface passivation, and graphene quantum dots in various configurations. In this article, we highlight these carbon-based QDs by focusing on their syntheses, on their photoexcited state properties and redox processes, and on their applications as photocatalysts in visible-light carbon dioxide reduction and in water-splitting, as well as on their mechanistic similarities and differences.

  11. Carrier dynamics in site-controlled Ga1-xInxN quantum dots

    International Nuclear Information System (INIS)

    Jetter, M.; Perez-Solorzano, V.; Groening, A.; Graebeldinger, H.; Ubl, M.; Schweizer, H.

    2006-01-01

    Site-controlled nanostructures were fabricated by deposition of GaInN on top of hexagonal GaN pyramids by selective metal organic vapor-phase epitaxy. This allows us to control exactly the position of the emitting quantum dots, which is an essential requirement for functionalized single-photon emitters. The nature of the growth process implies also the formation of quantum wells on the side-walls of the pyramid and quantum wires at the edges, next to the quantum dot on the apex. The emission properties of these structures were investigated using low-temperature time-resolved spectroscopy. These measurements showed regions of different confinement with emission in the green spectral wavelength range. The analysis of the decay times confirms that the luminescence originates from regions with different dimensionality. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Thermoelectric and Themorectification properties of quantum dot junctions

    Science.gov (United States)

    Kuo, David M.-T.; Chang, Yia-Chung

    2010-03-01

    The electrical conductance, thermal conductance, thermal power and figure of merit (ZT) of semiconductor quantum dots (QDs) embedded in an insulator matrix connected with metallic electrodes are theoretically investigated in the Coulomb blockade regime. The multilevel Anderson model is used to simulate the multiple QDs junction system. The charge and heat currents in the sequence tunneling process are calculated by the Keldysh Green function technique. In the linear response regime the ZT values are still very impressive in the small tunneling rates case, although the effect of electron Coulomb interaction on ZT is significant. Considering the inelastic scattering effect arising from size fluctuations, defects and electron-phonon interactions, the reduction of ZT values is serious. In the nonlinear response regime, the nonlinear heat flow with respect to temperature is observed. When the coupling between the QDs and the electrodes is asymmetrical, we observed a thermal rectification behavior, which is also influenced by the electron Coulomb interactions and energy level differences between the two dots.

  13. High Efficiency Quantum Dot Sensitized Solar Cells Based on Direct Adsorption of Quantum Dots on Photoanodes.

    Science.gov (United States)

    Wang, Wenran; Jiang, Guocan; Yu, Juan; Wang, Wei; Pan, Zhenxiao; Nakazawa, Naoki; Shen, Qing; Zhong, Xinhua

    2017-07-12

    Unambiguously direct adsorption (DA) of initial oil-soluble quantum dots (QDs) on TiO 2 film electrode is a convenient and simple approach in the construction of quantum dot sensitized solar cells (QDSCs). Regrettably, low QD loading amount and poor reproducibility shadow the advantages of DA route and constrain its practical application. Herein, the influence of experimental variables in DA process on QD loading amount as well as on the photovoltaic performance of the resultant QDSCs was investigated and optimized systematically, including the choice of solvent, purification of QDs, and sensitization time, as well as QD concentration. Experimental results demonstrated that it is essential to choose appropriate solvent as well as control purification cycles of original QD suspensions so as to realize satisfactory QD loading amount and ensure the high reproducibility. In addition, DA mode renders efficient electron injection from QD to TiO 2 , yet low QD loading amount and adverse QD agglomeration in comparison with the well-developed capping ligand induced self-assembly (CLIS) deposition approach. Mg 2+ treatment on TiO 2 photoanodes can promote the QD loading amount in DA mode. The optimized QDSCs based on DA mode exhibited efficiencies of 6.90% and 9.02% for CdSe and Zn-Cu-In-Se QDSCs, respectively, which were comparable to the best results based on CLIS mode (6.88% and 9.56%, respectively).

  14. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Herzog, Bastian, E-mail: BHerzog@physik.tu-berlin.de; Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike [Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany); Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  15. Ultrafast optical control of individual quantum dot spin qubits

    International Nuclear Information System (INIS)

    De Greve, Kristiaan; Press, David; McMahon, Peter L; Yamamoto, Yoshihisa

    2013-01-01

    Single spins in semiconductor quantum dots form a promising platform for solid-state quantum information processing. The spin-up and spin-down states of a single electron or hole, trapped inside a quantum dot, can represent a single qubit with a reasonably long decoherence time. The spin qubit can be optically coupled to excited (charged exciton) states that are also trapped in the quantum dot, which provides a mechanism to quickly initialize, manipulate and measure the spin state with optical pulses, and to interface between a stationary matter qubit and a ‘flying’ photonic qubit for quantum communication and distributed quantum information processing. The interaction of the spin qubit with light may be enhanced by placing the quantum dot inside a monolithic microcavity. An entire system, consisting of a two-dimensional array of quantum dots and a planar microcavity, may plausibly be constructed by modern semiconductor nano-fabrication technology and could offer a path toward chip-sized scalable quantum repeaters and quantum computers. This article reviews the recent experimental developments in optical control of single quantum dot spins for quantum information processing. We highlight demonstrations of a complete set of all-optical single-qubit operations on a single quantum dot spin: initialization, an arbitrary SU(2) gate, and measurement. We review the decoherence and dephasing mechanisms due to hyperfine interaction with the nuclear-spin bath, and show how the single-qubit operations can be combined to perform spin echo sequences that extend the qubit decoherence from a few nanoseconds to several microseconds, more than 5 orders of magnitude longer than the single-qubit gate time. Two-qubit coupling is discussed, both within a single chip by means of exchange coupling of nearby spins and optically induced geometric phases, as well as over longer-distances. Long-distance spin–spin entanglement can be generated if each spin can emit a photon that is

  16. Tuning Single Quantum Dot Emission with a Micromirror.

    Science.gov (United States)

    Yuan, Gangcheng; Gómez, Daniel; Kirkwood, Nicholas; Mulvaney, Paul

    2018-02-14

    The photoluminescence of single quantum dots fluctuates between bright (on) and dark (off) states, also termed fluorescence intermittency or blinking. This blinking limits the performance of quantum dot-based devices such as light-emitting diodes and solar cells. However, the origins of the blinking remain unresolved. Here, we use a movable gold micromirror to determine both the quantum yield of the bright state and the orientation of the excited state dipole of single quantum dots. We observe that the quantum yield of the bright state is close to unity for these single QDs. Furthermore, we also study the effect of a micromirror on blinking, and then evaluate excitation efficiency, biexciton quantum yield, and detection efficiency. The mirror does not modify the off-time statistics, but it does change the density of optical states available to the quantum dot and hence the on times. The duration of the on times can be lengthened due to an increase in the radiative recombination rate.

  17. Imaging electrostatically confined Dirac fermions in graphene quantum dots

    Science.gov (United States)

    Lee, Juwon; Wong, Dillon; Velasco, Jairo, Jr.; Rodriguez-Nieva, Joaquin F.; Kahn, Salman; Tsai, Hsin-Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Levitov, Leonid S.; Crommie, Michael F.

    2016-11-01

    Electrostatic confinement of charge carriers in graphene is governed by Klein tunnelling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at p-n junction boundaries. Reflection and transmission at these boundaries affect the quantum interference of electronic waves, enabling the formation of novel quasi-bound states. Here we report the use of scanning tunnelling microscopy to map the electronic structure of Dirac fermions confined in quantum dots defined by circular graphene p-n junctions. The quantum dots were fabricated using a technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe resonances due to quasi-bound states and directly visualize the quantum interference patterns arising from these states. Outside the quantum dots Dirac fermions exhibit Friedel oscillation-like behaviour. Bolstered by a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield insights into the spatial behaviour of electrostatically confined Dirac fermions.

  18. Influence of surface states of CuInS{sub 2} quantum dots in quantum dots sensitized photo-electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Zhuoyin; Liu, Yueli [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Wu, Lei [School of Electronic and Electrical, Wuhan Railway Vocational College of Technology, Wuhan 430205 (China); Zhao, Yinghan; Chen, Keqiang [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

    2016-12-01

    Graphical abstract: J–V curves of different ligands capped CuInS{sub 2} QDs sensitized TiO{sub 2} photo-electrodes. - Highlights: • DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared. • Surface states of quantum dots greatly influence the electrochemical performance of CuInS{sub 2} quantum dot sensitized photo-electrodes. • S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes. - Abstract: Surface states are significant factor for the enhancement of electrochemical performance in CuInS{sub 2} quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S{sup 2−} ligand capped CuInS{sub 2} quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S{sup 2−} ligand enhances the UV–vis absorption and electron–hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S{sup 2−} ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S{sup 2−}-capped CuInS{sub 2} quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

  19. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    Science.gov (United States)

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  20. SELF-ORGANIZATION OF LEAD SULFIDE QUANTUM DOTS INTO SUPERSTRUCTURES

    Directory of Open Access Journals (Sweden)

    Elena V. Ushakova

    2014-11-01

    Full Text Available The method of X-ray structural analysis (X-ray scattering at small angles is used to show that the structures obtained by self-organization on a substrate of lead sulfide (PbS quantum dots are ordered arrays. Self-organization of quantum dots occurs at slow evaporation of solvent from a cuvette. The cuvette is a thin layer of mica with teflon ring on it. The positions of peaks in SAXS pattern are used to calculate crystal lattice of obtained ordered structures. Such structures have a primitive orthorhombic crystal lattice. Calculated lattice parameters are: a = 21,1 (nm; b = 36,2 (nm; c = 62,5 (nm. Dimensions of structures are tens of micrometers. The spectral properties of PbS QDs superstructures and kinetic parameters of their luminescence are investigated. Absorption band of superstructures is broadened as compared to the absorption band of the quantum dots in solution; the luminescence band is slightly shifted to the red region of the spectrum, while its bandwidth is not changed much. Luminescence lifetime of obtained structures has been significantly decreased in comparison with the isolated quantum dots in solution, but remained the same for the lead sulfide quantum dots close-packed ensembles. Such superstructures can be used to produce solar cells with improved characteristics.

  1. Synthesis of CdSe Quantum Dots Using Fusarium oxysporum

    Directory of Open Access Journals (Sweden)

    Takaaki Yamaguchi

    2016-10-01

    Full Text Available CdSe quantum dots are often used in industry as fluorescent materials. In this study, CdSe quantum dots were synthesized using Fusarium oxysporum. The cadmium and selenium concentration, pH, and temperature for the culture of F. oxysporum (Fusarium oxysporum were optimized for the synthesis, and the CdSe quantum dots obtained from the mycelial cells of F. oxysporum were observed by transmission electron microscopy. Ultra-thin sections of F. oxysporum showed that the CdSe quantum dots were precipitated in the intracellular space, indicating that cadmium and selenium ions were incorporated into the cell and that the quantum dots were synthesized with intracellular metabolites. To reveal differences in F. oxysporum metabolism, cell extracts of F. oxysporum, before and after CdSe synthesis, were compared using sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE. The results suggested that the amount of superoxide dismutase (SOD decreased after CdSe synthesis. Fluorescence microscopy revealed that cytoplasmic superoxide increased significantly after CdSe synthesis. The accumulation of superoxide may increase the expression of various metabolites that play a role in reducing Se4+ to Se2− and inhibit the aggregation of CdSe to make nanoparticles.

  2. Electroluminescence of colloidal ZnSe quantum dots

    International Nuclear Information System (INIS)

    Dey, S.C.; Nath, S.S.

    2011-01-01

    The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

  3. Carrier-phonon interaction in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Seebeck, Jan

    2009-03-10

    In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

  4. A Quantum Dot with Spin-Orbit Interaction--Analytical Solution

    Science.gov (United States)

    Basu, B.; Roy, B.

    2009-01-01

    The practical applicability of a semiconductor quantum dot with spin-orbit interaction gives an impetus to study analytical solutions to one- and two-electron quantum dots with or without a magnetic field.

  5. Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

    Science.gov (United States)

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-02-23

    An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

  6. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots

    NARCIS (Netherlands)

    de Weerd, C.; Shin, Y.; Marino, E.; Kim, J.; Lee, H.; Saeed, S.; Gregorkiewicz, T.

    2017-01-01

    Semiconductor quantum dots are widely investigated due to their size dependent energy structure. In particular, colloidal quantum dots represent a promising nanomaterial for optoelectronic devices, such as photodetectors and solar cells, but also luminescent markers for biotechnology, among other

  7. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  8. Effect of quantum lattice fluctuations on quantum coherent oscillations in a coherently driven quantum dot-cavity system

    International Nuclear Information System (INIS)

    Zhu, Ka-Di; Li, Wai-Sang

    2003-01-01

    The quantum coherent oscillations in a coherently driven quantum dot-cavity system with the presence of strong exciton-phonon interactions are investigated theoretically in a fully quantum treatment. It is shown that even at zero temperature, the strong exciton-phonon interactions still affect the quantum coherent oscillations significantly

  9. Biosensing with Quantum Dots: A Microfluidic Approach

    Science.gov (United States)

    Vannoy, Charles H.; Tavares, Anthony J.; Noor, M. Omair; Uddayasankar, Uvaraj; Krull, Ulrich J.

    2011-01-01

    Semiconductor quantum dots (QDs) have served as the basis for signal development in a variety of biosensing technologies and in applications using bioprobes. The use of QDs as physical platforms to develop biosensors and bioprobes has attracted considerable interest. This is largely due to the unique optical properties of QDs that make them excellent choices as donors in fluorescence resonance energy transfer (FRET) and well suited for optical multiplexing. The large majority of QD-based bioprobe and biosensing technologies that have been described operate in bulk solution environments, where selective binding events at the surface of QDs are often associated with relatively long periods to reach a steady-state signal. An alternative approach to the design of biosensor architectures may be provided by a microfluidic system (MFS). A MFS is able to integrate chemical and biological processes into a single platform and allows for manipulation of flow conditions to achieve, by sample transport and mixing, reaction rates that are not entirely diffusion controlled. Integrating assays in a MFS provides numerous additional advantages, which include the use of very small amounts of reagents and samples, possible sample processing before detection, ultra-high sensitivity, high throughput, short analysis time, and in situ monitoring. Herein, a comprehensive review is provided that addresses the key concepts and applications of QD-based microfluidic biosensors with an added emphasis on how this combination of technologies provides for innovations in bioassay designs. Examples from the literature are used to highlight the many advantages of biosensing in a MFS and illustrate the versatility that such a platform offers in the design strategy. PMID:22163723

  10. Progress and prospect of quantum dot lasers

    Science.gov (United States)

    Arakawa, Yasuhiko

    2001-10-01

    Optical properties and growth of self-assembled quantum dots (SAQDs) for optoelectronic device applications are discussed. After briefly reviewing the history of research on QD lasers, we discuss growth of InAs SQDs including the light emission at the wavelength of 1.52)mum with a narrow linewidth (22 meV) and the area-controlled growth which demonstrates formation of SAQDs in selected local areas on a growth plane using a SiO)-2) mask with MOCVD growth. Then properties of the InGaAs AQDs are investigated by the near- field photoluminescence excitation spectroscopy which reveals gradually increasing continuum absorption connected with the two-dimensional-like (2D-like) wetting layer, resulting in faster relaxation of electrons due to a crossover between OD and 2D character in the density of states. Moreover, we have investigated InGaN self-assembled QDs on a GaN layer achieving the average diameter as small as 8.4nm and a strong light at room temperature. A laser structure with the stacked InGAN QDs embedded in the active layer was fabricated and room temperature operation of blue InGaN QD lasers was achieved under optical excitation. Carrier confinement in QDs was examined using near-field $DAL- photoluminescence measurement: A very sharp spectral line emitted from excitons in individual InGaN QDs was observed. Establishing AlGaN/GaN DBR of high quality, we succeeded in lasing action in InGaN blue light emitting VCSELs. Enhancement of spontaneous emission is demonstrated. Finally, perspective of QD lasers.

  11. A quantum walk in phase space with resonator-assisted double quantum dots

    International Nuclear Information System (INIS)

    Bian Zhi-Hao; Qin Hao; Zhan Xiang; Li Jian; Xue Peng

    2016-01-01

    We implement a quantum walk in phase space with a new mechanism based on the superconducting resonator-assisted double quantum dots. By analyzing the hybrid system, we obtain the necessary factors implementing a quantum walk in phase space: the walker, coin, coin flipping and conditional phase shift. The coin flipping is implemented by adding a driving field to the resonator. The interaction between the quantum dots and resonator is used to implement conditional phase shift. Furthermore, we show that with different driving fields the quantum walk in phase space exhibits a ballistic behavior over 25 steps and numerically analyze the factors influencing the spreading of the walker in phase space. (paper)

  12. Multiple Exciton Generation in Quantum Dot Solar Cells

    Science.gov (United States)

    Semonin, O. E.

    Photovoltaics are limited in their power conversion efficiency (PCE) by very rapid relaxation of energetic carriers to the band edge. Therefore, photons from the visible and ultraviolet parts of the spectrum typically are not efficiently converted into electrical energy. One approach that can address this is multiple exciton generation (MEG), where a single photon of sufficient energy can generate multiple excited electron-hole pairs. This process has been shown to be more efficient in quantum dots than bulk semiconductors, but it has never been demonstrated in the photocurrent of a solar cell. In order to demonstrate that multiple exciton generation can address fundamental limits for conventional photovoltaics, I have developed prototype devices from colloidal PbS and PbSe quantum dot inks. I have characterized both the colloidal suspensions and films of quantum dots with the goal of understanding what properties determine the efficiency of the solar cell and of the MEG process. I have found surface chemistry effects on solar cells, photoluminescence, and MEG, and I have found some chemical treatments that lead to solar cells showing MEG. These devices show external quantum efficiency (EQE) greater than 100% for certain parts of the solar spectrum, and I extract internal quantum efficiency (IQE) consistent with previous measurements of colloidal suspensions of quantum dots. These findings are a small first step toward breaking the single junction Shockley-Queisser limit of present-day first and second generation solar cells, thus moving photovoltaic cells toward a new regime of efficiency.

  13. Dynamically broken symmetry in periodically gated quantum dots: charge accumulation and DC-current

    International Nuclear Information System (INIS)

    Kwapinski, T.; Kohler, S.; Hanggi, P.

    2010-01-01

    Time-dependent electron transport through a quantum dot and double quantum dot systems in the presence of polychromatic external periodic quantum dot energy-level modulations is studied within the time evolution operator method for a tight-binding Hamiltonian. Analytical relations for the dc-current flowing through the system and the charge accumulated on a quantum dot are obtained for the zero-temperature limit.

  14. Colloidal-quantum-dot photovoltaics using atomic-ligand passivation

    KAUST Repository

    Tang, Jiang

    2011-09-18

    Colloidal-quantum-dot (CQD) optoelectronics offer a compelling combination of solution processing and spectral tunability through quantum size effects. So far, CQD solar cells have relied on the use of organic ligands to passivate the surface of the semiconductor nanoparticles. Although inorganic metal chalcogenide ligands have led to record electronic transport parameters in CQD films, no photovoltaic device has been reported based on such compounds. Here we establish an atomic ligand strategy that makes use of monovalent halide anions to enhance electronic transport and successfully passivate surface defects in PbS CQD films. Both time-resolved infrared spectroscopy and transient device characterization indicate that the scheme leads to a shallower trap state distribution than the best organic ligands. Solar cells fabricated following this strategy show up to 6% solar AM1.5G power-conversion efficiency. The CQD films are deposited at room temperature and under ambient atmosphere, rendering the process amenable to low-cost, roll-by-roll fabrication. © 2011 Macmillan Publishers Limited. All rights reserved.

  15. Double Rashba Quantum Dots Ring as a Spin Filter

    Directory of Open Access Journals (Sweden)

    Chi Feng

    2008-01-01

    Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.

  16. Charge pumping in strongly coupled molecular quantum dots

    Science.gov (United States)

    Haughian, Patrick; Yap, Han Hoe; Gong, Jiangbin; Schmidt, Thomas L.

    2017-11-01

    The interaction between electrons and the vibrational degrees of freedom of a molecular quantum dot can lead to an exponential suppression of the conductance, an effect which is commonly termed Franck-Condon blockade. Here, we investigate this effect in a quantum dot driven by time-periodic gate voltages and tunneling amplitudes using nonequilibrium Green's functions and a Floquet expansion. Building on previous results showing that driving can lift the Franck-Condon blockade, we investigate driving protocols which can be used to pump charge across the quantum dot. In particular, we show that due to the strongly coupled nature of the system, the pump current at resonance is an exponential function of the drive strength.

  17. A tunable colloidal quantum dot photo field-effect transistor

    KAUST Repository

    Ghosh, Subir

    2011-01-01

    We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

  18. Broadband room temperature strong coupling between quantum dots and metamaterials.

    Science.gov (United States)

    Indukuri, Chaitanya; Yadav, Ravindra Kumar; Basu, J K

    2017-08-17

    Herein, we report the first demonstration of room temperature enhanced light-matter coupling in the visible regime for metamaterials using cooperative coupled quasi two dimensional quantum dot assemblies located at precise distances from the hyperbolic metamaterial (HMM) templates. The non-monotonic variation of the magnitude of strong coupling, manifested in terms of strong splitting of the photoluminescence of quantum dots, can be explained in terms of enhanced LDOS near the surface of such metamaterials as well as the plasmon mediated super-radiance of closely spaced quantum dots (QDs). Our methodology of enhancing broadband, room temperature, light-matter coupling in the visible regime for metamaterials opens up new possibilities of utilising these materials for a wide range of applications including QD based thresholdless nanolasers and novel metamaterial based integrated photonic devices.

  19. Valley-orbit hybrid states in Si quantum dots

    Science.gov (United States)

    Gamble, John; Friesen, Mark; Coppersmith, S. N.

    2013-03-01

    The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).

  20. Colloidal quantum dot solids for solution-processed solar cells

    KAUST Repository

    Yuan, Mingjian

    2016-02-29

    Solution-processed photovoltaic technologies represent a promising way to reduce the cost and increase the efficiency of solar energy harvesting. Among these, colloidal semiconductor quantum dot photovoltaics have the advantage of a spectrally tuneable infrared bandgap, which enables use in multi-junction cells, as well as the benefit of generating and harvesting multiple charge carrier pairs per absorbed photon. Here we review recent progress in colloidal quantum dot photovoltaics, focusing on three fronts. First, we examine strategies to manage the abundant surfaces of quantum dots, strategies that have led to progress in the removal of electronic trap states. Second, we consider new device architectures that have improved device performance to certified efficiencies of 10.6%. Third, we focus on progress in solution-phase chemical processing, such as spray-coating and centrifugal casting, which has led to the demonstration of manufacturing-ready process technologies.

  1. QCAD simulation and optimization of semiconductor double quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson

    2013-12-01

    We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design

  2. Investigation of coherent molecular resonances in quantum dot–metallic nanoparticle systems using their spontaneous emission

    International Nuclear Information System (INIS)

    Sadeghi, S.M.; Patty, K.D.

    2014-01-01

    In the presence of metallic nanoparticles the nature of the optical excitations (pumping) of semiconductor quantum dots can be determined by their molecular states and resonances formed via coherent coupling of excitons and plasmons. We show that the spontaneous emission of such quantum dots can provide key information regarding formation and characteristics of such molecular properties. This includes an ultra-fast switching process associated with optical transition between the molecular states of the quantum dot-metallic nanoparticle system or its plasmonic meta-resonance when the intensity of the laser field responsible for the exciton–plasmon coupling reaches a critical value. We also show that by varying the intensity of this laser, the spontaneous emission exhibits characteristic features indicating tunability of the molecular resonances and excitation-power dependence of plasmonic fields of the metallic nanoparticles. - Highlights: • Investigation of collective molecular properties of quantum dot-metallic nanoparticle systems. • Impact of such collective properties on the optical excitation of quantum dots. • Effects of exciton–plasmon coupling in the spontaneous emission of the quantum dots. • Signatures of plasmonic meta-resonances in the fluorescence of quantum dots

  3. Long lived coherence in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Birkedal, Dan; Leosson, Kristjan; Hvam, Jørn Märcher

    2001-01-01

    We report measurements of ultralong coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 mu eV, which is significantly smaller than the linewidth observed in single-dot...... luminescence. Time-resolved luminescence measurements show a lifetime of the dot ground state of 800 ps, demonstrating the presence of pure dephasing at finite temperature. The homogeneous width is lifetime limited only at temperatures approaching 0 K....

  4. Realization of electrically tunable single quantum dot nanocavities

    Energy Technology Data Exchange (ETDEWEB)

    Hofbauer, Felix Florian Georg

    2009-03-15

    We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

  5. Long coherence times in self-assembled semiconductor quantum dots

    DEFF Research Database (Denmark)

    Birkedal, Dan; Leosson, K.; Hvam, Jørn Märcher

    2002-01-01

    We report measurements of ultra-long coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 mueV, which is significantly smaller than the linewidth observed in single-dot...... luminescence. Time-resolved luminescence measurements show a lifetime of the dot ground state of 800 ps demonstrating the presence of pure dephasing at finite temperature. The homogeneous width is lifetime limited only at temperatures approaching 0 K....

  6. Preparation of carbon quantum dots based high photostability luminescent membranes.

    Science.gov (United States)

    Zhao, Jinxing; Liu, Cui; Li, Yunchuan; Liang, Jiyuan; Liu, Jiyan; Qian, Tonghui; Ding, Jianjun; Cao, Yuan-Cheng

    2017-06-01

    Urethane acrylate (UA) was used to prepare carbon quantum dots (C-dots) luminescent membranes and the resultants were examined with FT-IR, mechanical strength, scanning electron microscope (SEM) and quantum yields (QYs). FT-IR results showed the polyurethane acrylate (PUA) prepolymer -C = C-vibration at 1101 cm -1 disappeared but there was strong vibration at1687cm -1 which was contributed from the-C = O groups in cross-linking PUA. Mechanical strength results showed that the different quantity of C-dots loadings and UV-curing time affect the strength. SEM observations on the cross-sections of the membranes are uniform and have no structural defects, which prove that the C-dots are compatible with the water-soluble PUA resin. The C-dot loading was increased from 0 to 1 g, the maximum tensile stress was nearly 2.67 MPa, but the tensile strain was decreased from 23.4% to 15.1% and 7.2% respectively. QYs results showed that the C-dots in the membrane were stable after 120 h continuous irradiation. Therefore, the C-dots photoluminescent film is the promising material for the flexible devices in the future applications. Copyright © 2016 John Wiley & Sons, Ltd.

  7. Room-temperature dephasing in InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Märcher

    1999-01-01

    Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature...... stacked layers of InAs-InGaAs-GaAs quantum dots....

  8. Incorporation of graphene in quantum dot sensitized solar cells based on ZnO nanorods.

    Science.gov (United States)

    Chen, Jing; Li, Chu; Eda, Goki; Zhang, Yan; Lei, Wei; Chhowalla, Manish; Milne, William I; Deng, Wei-Qiao

    2011-06-07

    We demonstrate a novel architecture of solar cell by incorporating graphene thin film in a quantum dot sensitized solar cell. Quantum dot sensitized nanorods with a graphene layer exhibited a 54.7% improvement comparing a quantum dot sensitized ZnO nanorods without graphene layer. A fill factor as high as ∼62% was also obtained.

  9. A triple quantum dot in a single-wall carbon nanotube

    DEFF Research Database (Denmark)

    Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.

    2008-01-01

    A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams...

  10. Sub-diffraction positioning of a two-photon excited and optically trapped quantum dot

    DEFF Research Database (Denmark)

    Pedersen, Liselotte Jauffred; Kyrsting, Anders Højbo; Christensen, Eva Arnspang

    2014-01-01

    to blueshift. A quantum dot is much smaller than a diffraction limited laser focus and by mapping out the intensity of the focal volume and overlaying this with the positions visited by a quantum dot, a quantum dot is shown often to explore regions of the focal volume where the intensity is too low to render...

  11. Self-organized formation of quantum dots of a material on a substrate

    Science.gov (United States)

    Zhang, Zhenyu; Wendelken, John F.; Chang, Ming-Che; Pai, Woei Wu

    2001-01-01

    Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

  12. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    NARCIS (Netherlands)

    Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

    2016-01-01

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

  13. Overview of Stabilizing Ligands for Biocompatible Quantum Dot Nanocrystals

    Directory of Open Access Journals (Sweden)

    Aaron Clapp

    2011-11-01

    Full Text Available Luminescent colloidal quantum dots (QDs possess numerous advantages as fluorophores in biological applications. However, a principal challenge is how to retain the desirable optical properties of quantum dots in aqueous media while maintaining biocompatibility. Because QD photophysical properties are directly related to surface states, it is critical to control the surface chemistry that renders QDs biocompatible while maintaining electronic passivation. For more than a decade, investigators have used diverse strategies for altering the QD surface. This review summarizes the most successful approaches for preparing biocompatible QDs using various chemical ligands.

  14. Electric and Magnetic Interaction between Quantum Dots and Light

    DEFF Research Database (Denmark)

    Tighineanu, Petru

    The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction......-diusion during the growth process. The small size of excitons leads to a small oscillator strength of about 10. These ndings are crosschecked by an analysis of the phonon-broadened spectra revealing a small exciton wavefunction. We conclude that engineering large excitons with giant oscillator strength remains...

  15. Landauer current and mutual information in a bosonic quantum dot

    Science.gov (United States)

    Shashikant Sable, Hrushikesh; Singh Bhakuni, Devendra; Sharma, Auditya

    2018-02-01

    We study the quantum transport of bosons through a quantum dot coupled to two macroscopic heat baths L and R, held at fixed temperatures TL and TR respectively. We manage to cast the particle as well as the heat current into the Landauer form. Following the correlation matrix approach, we compute the time-dependent mutual information of the dot with the baths. We find that mutual information goes logarithmically as the number of bosons, and at low temperatures, it is possible to set up the parameters in such a way that in steady-state, the mutual information goes quadratically as a function of current.

  16. Design of Efficient Mirror Adder in Quantum- Dot Cellular Automata

    Science.gov (United States)

    Mishra, Prashant Kumar; Chattopadhyay, Manju K.

    2018-03-01

    Lower power consumption is an essential demand for portable multimedia system using digital signal processing algorithms and architectures. Quantum dot cellular automata (QCA) is a rising nano technology for the development of high performance ultra-dense low power digital circuits. QCA based several efficient binary and decimal arithmetic circuits are implemented, however important improvements are still possible. This paper demonstrate Mirror Adder circuit design in QCA. We present comparative study of mirror adder cells designed using conventional CMOS technique and mirror adder cells designed using quantum-dot cellular automata. QCA based mirror adders are better in terms of area by order of three.

  17. Tunable Hybrid Qubit in a Triple Quantum Dot

    Science.gov (United States)

    Wang, Bao-Chuan; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Hu, Xuedong; Jiang, Hong-Wen; Guo, Guo-Ping

    2017-12-01

    We experimentally demonstrate quantum-coherent dynamics of a triple-dot-based multielectron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, measured electrically, and has a good ratio Q ˜29 between the coherence time and gate time. Furthermore, the current multielectron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We also provide a qualitative understanding of the experimental observations by mapping them onto a three-electron system. The demonstration of the high tunability in a triple dot system could be potentially useful for future quantum control.

  18. Gain recovery dynamics and limitations in quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg

    2001-01-01

    Summary form only given. While ultra-low threshold current densities have been achieved in quantum dot (QD) lasers, the predicted potential for high-speed modulation has not yet been realized despite the high differential gain. Furthermore, recent single pulse experiments demonstrated very fast...... gain recovery in a quantum dot amplifier, and it is thus not yet clear what the limiting processes for the device response are. We present the results of a comprehensive theoretical model, which agrees well with the experimental results, and indicates the importance of slow recovery of higher energy...

  19. Quantum Dot Nanobioelectronics and Selective Antimicrobial Redox Interventions

    Science.gov (United States)

    Goodman, Samuel Martin

    The unique properties of nanomaterials have engendered a great deal of interest in applying them for applications ranging from solid state physics to bio-imaging. One class of nanomaterials, known collectively as quantum dots, are defined as semiconducting crystals which have a characteristic dimension smaller than the excitonic radius of the bulk material which leads to quantum confinement effects. In this size regime, excited charge carriers behave like prototypical particles in a box, with their energy levels defined by the dimensions of the constituent particle. This is the source of the tunable optical properties which have drawn a great deal of attention with regards to finding appropriate applications for these materials. This dissertation is divided into multiple sections grouped by the type of application explored. The first sectoin investigates the energetic interactions of physically-coupled quantum dots and DNA, with the goal of gaining insight into how self-assembled molecular wires can bridge the energetic states of physically separated nanocrystals. Chapter 1 begins with an introduction to the properties of quantum dots, the conductive properties of DNA, and the common characterization methods used to characterize materials on the nanoscale. In Chapter 2 scanning tunneling measurements of QD-DNA constructs on the single particle level are presented which show the tunable coupling between the two materials and their resulting hybrid electronic structure. This is expanded upon in Chapter 3 where the conduction of photogenerated charges in QD-DNA hybrid thin films are characterized, which exhibit different charge transfer pathways through the constituent nucleobases depending on the energy of the incident light and resulting electrons. Complementary investigations of energy transfer mediated through DNA are presented in Chapter 4, with confirmation of Dexter-like transfer being facilitated through the oligonucleotides. The second section quantifies the

  20. Gain dynamics and saturation in semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

    2004-01-01

    Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

  1. Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

    Directory of Open Access Journals (Sweden)

    Kenny F. Chou

    2015-06-01

    Full Text Available Förster (or fluorescence resonance energy transfer amongst semiconductor quantum dots (QDs is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting.

  2. Graphene quantum dots, graphene oxide, carbon quantum dots and graphite nanocrystals in coals

    Science.gov (United States)

    Dong, Yongqiang; Lin, Jianpeng; Chen, Yingmei; Fu, Fengfu; Chi, Yuwu; Chen, Guonan

    2014-06-01

    Six coal samples of different ranks have been used to prepare single-layer graphene quantum dots (S-GQDs). After chemical oxidation and a series of centrifugation separation, every coal could be treated into two fractions, namely, CoalA and CoalB. According to the characterization results of TEM, AFM, XRD, Raman and FTIR, CoalA was revealed to be mainly composed of S-GQDs, which have an average height of about 0.5 nm and an average plane dimension of about 10 nm. The obtained S-GQDs showed excitation-dependent fluorescence and excellent electrochemiluminescence. CoalB was found to be some other carbon-based nanomaterials (CNMs), including agglomerated GQDs, graphene oxide, carbon quantum dots and agglomerated carbon nanocrystals. Generally, low-ranked coals might be more suitable for the preparation of S-GQDs. The production yield of S-GQDs from the six investigated coals decreased from 56.30% to 14.66% when the coal rank increased gradually. In contrast, high-ranked coals had high production yield of CoalB and might be more suitable for preparing other CNMs that were contained in CoalB, although those CNMs were difficult to separate from each other in our experiment.Six coal samples of different ranks have been used to prepare single-layer graphene quantum dots (S-GQDs). After chemical oxidation and a series of centrifugation separation, every coal could be treated into two fractions, namely, CoalA and CoalB. According to the characterization results of TEM, AFM, XRD, Raman and FTIR, CoalA was revealed to be mainly composed of S-GQDs, which have an average height of about 0.5 nm and an average plane dimension of about 10 nm. The obtained S-GQDs showed excitation-dependent fluorescence and excellent electrochemiluminescence. CoalB was found to be some other carbon-based nanomaterials (CNMs), including agglomerated GQDs, graphene oxide, carbon quantum dots and agglomerated carbon nanocrystals. Generally, low-ranked coals might be more suitable for the preparation of

  3. Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

    Science.gov (United States)

    Chou, Kenny F.; Dennis, Allison M.

    2015-01-01

    Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting. PMID:26057041

  4. Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

    International Nuclear Information System (INIS)

    Kalden, J; Sebald, K; Gutowski, J; Tessarek, C; Figge, S; Kruse, C; Hommel, D

    2010-01-01

    We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.

  5. Hybrid structures based on quantum dots and graphene nanobelts

    Science.gov (United States)

    Reznik, I. A.; Gromova, Yu. A.; Zlatov, A. S.; Baranov, M. A.; Orlova, A. O.; Moshkalev, S. A.; Maslov, V. G.; Baranov, A. V.; Fedorov, A. V.

    2017-01-01

    Luminescence and photoelectric properties of hybrid structures based on CdSe/ZnS quantum dots (QDs) and multilayer graphene have been investigated. A correlation between the luminescence quantum yield of QDs and their photoelectric properties in hybrid structures is established. It is shown that a decrease in the QD luminescence quantum yield due to adsorption of 1-(2-pyridylazo)-2-naphtol azo dye molecules onto the QD surface and a photoinduced increase in the QD luminescence quantum yield are accompanied by a symbate change in the hybrid structure photoconductivity.

  6. Complex dynamics in planar two-electron quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Schroeter, Sebastian Josef Arthur

    2013-06-25

    Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two

  7. Complex dynamics in planar two-electron quantum dots

    International Nuclear Information System (INIS)

    Schroeter, Sebastian Josef Arthur

    2013-01-01

    Quantum dots play an important role in a wide range of recent experimental and technological developments. In particular they are promising candidates for realisations of quantum bits and further applications in quantum information theory. The harmonically confined Hooke's atom model is experimentally verified and separates in centre-of-mass and relative coordinates. Findings that are contradictory to this separability call for an extension of the model, in particular changing the confinement potential. In order to study effects of an anharmonic confinement potential on spectral properties of planar two-electron quantum dots a sophisticated numerical approach is developed. Comparison between the Helium atom, Hooke's atom and an anharmonic potential model are undertaken in order to improve the description of quantum dots. Classical and quantum features of complexity and chaos are investigated and used to characterise the dynamics of the system to be mixed regular-chaotic. Influence of decoherence can be described by quantum fidelity, which measures the effect of a perturbation on the time evolution. The quantum fidelity of eigenstates of the system depends strongly on the properties of the perturbation. Several methods for solving the time-dependent Schrödinger equation are implemented and a high level of accuracy for long time evolutions is achieved. The concept of offset entanglement, the entanglement of harmonic models in the noninteracting limit, is introduced. This concept explains different questions raised in the literature for harmonic quantum dot models, recently. It shows that only in the groundstate the electrons are not entangled in the fermionic sense. The applicability, validity, and origin of Hund's first rule in general quantum dot models is further addressed. In fact Hund's first rule is only applicable, and in this case also valid, for one pair of singlet and triplet states in Hooke's atom. For more realistic models of two-electron quantum dots an

  8. Transport through Andreev bound states in a graphene quantum dot

    Science.gov (United States)

    Dirks, Travis; Hughes, Taylor L.; Lal, Siddhartha; Uchoa, Bruno; Chen, Yung-Fu; Chialvo, Cesar; Goldbart, Paul M.; Mason, Nadya

    2011-05-01

    When a low-energy electron is incident on an interface between a metal and superconductor, it causes the injection of a Cooper pair into the superconductor and the generation of a hole that reflects back into the metal--a process known as Andreev reflection. In confined geometries, this process can give rise to discrete Andreev bound states (ABS), which can enable transport of supercurrents through non-superconducting materials and have recently been proposed as a means of realizing solid-state qubits. Here, we report transport measurements of sharp, gate-tunable ABS formed in a superconductor-quantum dot (QD)-normal system realized on an exfoliated graphene sheet. The QD is formed in graphene beneath a superconducting contact as a result of a work-function mismatch. Individual ABS form when the discrete QD levels are proximity-coupled to the superconducting contact. Owing to the low density of states of graphene and the sensitivity of the QD levels to an applied gate voltage, the ABS spectra are narrow and can be continuously tuned down to zero energy by the gate voltage.

  9. Field-emission from quantum-dot-in-perovskite solids.

    Science.gov (United States)

    García de Arquer, F Pelayo; Gong, Xiwen; Sabatini, Randy P; Liu, Min; Kim, Gi-Hwan; Sutherland, Brandon R; Voznyy, Oleksandr; Xu, Jixian; Pang, Yuangjie; Hoogland, Sjoerd; Sinton, David; Sargent, Edward

    2017-03-24

    Quantum dot and well architectures are attractive for infrared optoelectronics, and have led to the realization of compelling light sensors. However, they require well-defined passivated interfaces and rapid charge transport, and this has restricted their efficient implementation to costly vacuum-epitaxially grown semiconductors. Here we report solution-processed, sensitive infrared field-emission photodetectors. Using quantum-dots-in-perovskite, we demonstrate the extraction of photocarriers via field emission, followed by the recirculation of photogenerated carriers. We use in operando ultrafast transient spectroscopy to sense bias-dependent photoemission and recapture in field-emission devices. The resultant photodiodes exploit the superior electronic transport properties of organometal halide perovskites, the quantum-size-tuned absorption of the colloidal quantum dots and their matched interface. These field-emission quantum-dot-in-perovskite photodiodes extend the perovskite response into the short-wavelength infrared and achieve measured specific detectivities that exceed 10 12 Jones. The results pave the way towards novel functional photonic devices with applications in photovoltaics and light emission.

  10. Design strategy for terahertz quantum dot cascade lasers.

    Science.gov (United States)

    Burnett, Benjamin A; Williams, Benjamin S

    2016-10-31

    The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.

  11. Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

    Energy Technology Data Exchange (ETDEWEB)

    Klymenko, M. V. [Department of Chemistry, University of Liège, B4000 Liège (Belgium); Klein, M. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Levine, R. D. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Crump Institute for Molecular Imaging and Department of Molecular and Medical Pharmacology, David Geffen School of Medicine and Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095 (United States); Remacle, F., E-mail: fremacle@ulg.ac.be [Department of Chemistry, University of Liège, B4000 Liège (Belgium); The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2016-07-14

    A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

  12. Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

    International Nuclear Information System (INIS)

    Klymenko, M. V.; Klein, M.; Levine, R. D.; Remacle, F.

    2016-01-01

    A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

  13. Interaction of Water-Soluble CdTe Quantum Dots with Bovine Serum Albumin

    Science.gov (United States)

    2011-01-01

    Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating. PMID:27502633

  14. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.

    Science.gov (United States)

    Shamirzaev, T S; Abramkin, D S; Nenashev, A V; Zhuravlev, K S; Trojánek, F; Dzurnák, B; Malý, P

    2010-04-16

    Structures with self-assembled InAs quantum dots (QDs) embedded in an AlAs matrix have been studied by steady-state and transient photoluminescence. It has been shown that in contrast to InAs/GaAs QD systems carriers are mainly captured by quantum dots directly from the AlAs matrix, while transfer of carriers captured by the wetting layer far away from QDs to the QDs is suppressed. At low temperatures the carriers captured by the wetting layer are localized by potential fluctuations at the wetting layer interface, while at high temperatures the carriers are delocalized but captured by nonradiative centers located in the wetting layer.

  15. Quantum dot–metallic nanorod sensors via exciton–plasmon interaction

    International Nuclear Information System (INIS)

    Hatef, Ali; Boulais, Étienne; Meunier, Michel; Sadeghi, Seyed M

    2013-01-01

    We investigate quantum nanosensors based on hybrid systems consisting of semiconductor quantum dots and metallic nanorods in the near-infrared regime. These sensors can detect biological and chemical substances based on their impact on the coherent exciton–plasmon coupling and molecular resonances supported by such systems when they interact with a laser field. We demonstrate that the ultrahigh sensitivity of such molecular resonances on environmental conditions allows dramatic and nearly instantaneous changes in the total field experienced by the semiconductor quantum dot via minuscule variations of the local refractive indices of the quantum dot or nanorod. The proposed nanosensors can utilize quantum effects to control the sense (or direction) of the changes in the quantum dot emission, allowing us to have bistable switching from dark to bright states or vice versa via adsorption (or detachment) of biomolecules. These sensors can also offer detection of ultra-small variations in the local dielectric constant of the quantum dots or metallic nanorods via coherent induction of time delays in the effective field experienced by the quantum dots when the hybrid systems interact with time-dependent laser fields. This leads to unprecedented bulk refractive index sensitivities. Our results show that one can utilize quantum phase to control the coherent exciton–plasmon dynamics in these sensors such that introduction of a biomolecule can increase or decrease the time delay. These results offer novel ways to detect single biomolecules via application of quantum coherence to convert their impact into spectacular optical events. (paper)

  16. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    International Nuclear Information System (INIS)

    Hernandez-Maldonado, D.; Herrera, M.; Sales, D.L.; Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L.; Pizarro, J.; Galindo, P.L.; Molina, S.I.

    2010-01-01

    The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

  17. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Maldonado, D., E-mail: david.hernandez@uca.es [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Herrera, M.; Sales, D.L. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L. [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid (Spain); Pizarro, J.; Galindo, P.L. [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Molina, S.I. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)

    2010-07-01

    The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

  18. Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

    International Nuclear Information System (INIS)

    Htoon, H.; Keto, J. W.; Baklenov, O.; Holmes, A. L. Jr.; Shih, C. K.

    2000-01-01

    By using a cross-sectional geometry, we show the capability to perform single-dot spectroscopy in self-assembled quantum dots using far-field optics. By using this method, we study the quantum-confined Stark effect in self-assembled quantum dots. For single-stack quantum dots (QDs), we find that the spectra are redshifted with an increase in electric field. For vertically coupled double-stack quantum dots, while most of the QDs are redshifted, some QDs show blueshifted spectra, which can be interpreted as an evidence of coupled QD molecules. (c) 2000 American Institute of Physics

  19. Unidirectional reflectionless phenomena in a non-Hermitian quantum system of quantum dots coupled to a plasmonic waveguide.

    Science.gov (United States)

    Wu, Nan; Zhang, Cong; Jin, Xing Ri; Zhang, Ying Qiao; Lee, YoungPak

    2018-02-19

    Unidirectional reflectionless phenomena are investigated theoretically in a non-Hermitian quantum system composed of several quantum dots and a plasmonic waveguide. By adjusting the phase shifts between quantum dots, single- and dual-band unidirectional reflectionlessnesses are realized at exceptional points based on two and three quantum dots coupled to a plasmonic waveguide, respectively. In addition, single- and dual-band unidirectional perfect absorptions with high quality factors are obtained at the vicinity of exceptional points.

  20. Optically Driven Spin Based Quantum Dots for Quantum Computing - Research Area 6 Physics 6.3.2

    Science.gov (United States)

    2015-12-15

    SECURITY CLASSIFICATION OF: This program conducted experimental and theoretical research aimed at developing an optically driven quantum dot quantum ...computer, where, the qubit is the spin of the electron trapped in a self-assembled quantum dot in InAs. Optical manipulation using the trion state...reports. In this reporting period, we discovered the nuclear spin quieting first discovered in 2008 is present in vertically coupled quantum dots but

  1. Palladium gates for reproducible quantum dots in silicon.

    Science.gov (United States)

    Brauns, Matthias; Amitonov, Sergey V; Spruijtenburg, Paul-Christiaan; Zwanenburg, Floris A

    2018-04-09

    We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack.

  2. One- and two-phonon capture processes in quantum dots

    DEFF Research Database (Denmark)

    Magnúsdóttir, Ingibjörg; Uskov, Alexander; Bischoff, Svend

    2002-01-01

    Multiphonon capture processes are investigated theoretically and found to contribute efficiently to the carrier injection into quantum dots. It is shown that two-phonon capture contributes where single-phonon capture is energetically inhibited and can lead to electron capture times of a few...

  3. Modelling exciton–phonon interactions in optically driven quantum dots

    DEFF Research Database (Denmark)

    Nazir, Ahsan; McCutcheon, Dara

    2016-01-01

    We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...

  4. Semiconductor quantum dot amplifiers for optical signal processing

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Uskov, A. V.; Bischoff, Svend

    2001-01-01

    The dynamics of quantum dot semiconductor amplifiers are investigated theoretically with respect to the potential for ultrafast signal processing. The high-speed signal processing capacity of these devices is found to be limited by the wetting layer dynamics in case of electrical pumping, while...... optical pumping partly removes this limitation. Also, the possibility of using spectral hole burning for signal processing is discussed....

  5. Orientation-dependent imaging of electronically excited quantum dots

    Science.gov (United States)

    Nguyen, Duc; Goings, Joshua J.; Nguyen, Huy A.; Lyding, Joseph; Li, Xiaosong; Gruebele, Martin

    2018-02-01

    We previously demonstrated that we can image electronic excitations of quantum dots by single-molecule absorption scanning tunneling microscopy (SMA-STM). With this technique, a modulated laser beam periodically saturates an electronic transition of a single nanoparticle, and the resulting tunneling current modulation ΔI(x0, y0) maps out the SMA-STM image. In this paper, we first derive the basic theory to calculate ΔI(x0, y0) in the one-electron approximation. For near-resonant tunneling through an empty orbital "i" of the nanostructure, the SMA-STM signal is approximately proportional to the electron density |φi) (x0,y0)|imaged. We then show experimentally that we can nudge quantum dots on the surface and roll them, thus imaging excited state electronic structure of a single quantum dot at different orientations. We use density functional theory to model ODMs at various orientations, for qualitative comparison with the SMA-STM experiment. The model demonstrates that our experimentally observed signal monitors excited states, localized by defects near the surface of an individual quantum dot. The sub-nanometer super-resolution imaging technique demonstrated here could become useful for mapping out the three-dimensional structure of excited states localized by defects within nanomaterials.

  6. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  7. Electronic Structure of Helium Atom in a Quantum Dot

    Science.gov (United States)

    Saha, Jayanta K.; Bhattacharyya, S.; Mukherjee, T. K.

    2016-03-01

    Bound and resonance states of helium atom have been investigated inside a quantum dot by using explicitly correlated Hylleraas type basis set within the framework of stabilization method. To be specific, precise energy eigenvalues of bound 1sns (1Se) (n = 1-6) states and the resonance parameters i.e. positions and widths of 1Se states due to 2sns (n = 2-5) and 2pnp (n = 2-5) configurations of confined helium below N = 2 ionization threshold of He+ have been estimated. The two-parameter (Depth and Width) finite oscillator potential is used to represent the confining potential due to the quantum dot. It has been explicitly demonstrated that the electronic structural properties become sensitive functions of the dot size. It is observed from the calculations of ionization potential that the stability of an impurity ion within a quantum dot may be manipulated by varying the confinement parameters. A possibility of controlling the autoionization lifetime of doubly excited states of two-electron ions by tuning the width of the quantum cavity is also discussed here. TKM Gratefully Acknowledges Financial Support under Grant No. 37(3)/14/27/2014-BRNS from the Department of Atomic Energy, BRNS, Government of India. SB Acknowledges Financial Support under Grant No. PSW-160/14-15(ERO) from University Grants Commission, Government of India

  8. Quantum Dots for Live Cell and In Vivo Imaging

    Directory of Open Access Journals (Sweden)

    Jason R. E. Shepard

    2009-02-01

    Full Text Available In the past few decades, technology has made immeasurable strides to enable visualization, identification, and quantitation in biological systems. Many of these technological advancements are occurring on the nanometer scale, where multiple scientific disciplines are combining to create new materials with enhanced properties. The integration of inorganic synthetic methods with a size reduction to the nano-scale has lead to the creation of a new class of optical reporters, called quantum dots. These semiconductor quantum dot nanocrystals have emerged as an alternative to organic dyes and fluorescent proteins, and are brighter and more stable against photobleaching than standard fluorescent indicators. Quantum dots have tunable optical properties that have proved useful in a wide range of applications from multiplexed analysis such as DNA detection and cell sorting and tracking, to most recently demonstrating promise for in vivo imaging and diagnostics. This review provides an in-depth discussion of past, present, and future trends in quantum dot use with an emphasis on in vivo imaging and its related applications.

  9. Current noise in a vibrating quantum dot array

    DEFF Research Database (Denmark)

    Flindt, Christian; Novotny, Tomas; Jauho, Antti-Pekka

    2004-01-01

    We develop methods for calculating the zero-frequency noise for quantum shuttles, i.e., nanoelectromechanical devices where the mechanical motion is quantized. As a model system we consider a three-dot array, where the internal electronic coherence both complicates and enriches the physics. Two...

  10. Surface processes during purification of InP quantum dots

    Directory of Open Access Journals (Sweden)

    Natalia Mordvinova

    2014-08-01

    Full Text Available Recently, a new simple and fast method for the synthesis of InP quantum dots by using phosphine as phosphorous precursor and myristic acid as surface stabilizer was reported. Purification after synthesis is necessary to obtain samples with good optical properties. Two methods of purification were compared and the surface processes which occur during purification were studied. Traditional precipitation with acetone is accompanied by a small increase in photoluminescence. It occurs that during the purification the hydrolysis of the indium precursor takes place, which leads to a better surface passivation. The electrophoretic purification technique does not increase luminescence efficiency but yields very pure quantum dots in only a few minutes. Additionally, the formation of In(OH3 during the low temperature synthesis was explained. Purification of quantum dots is a very significant part of postsynthetical treatment that determines the properties of the material. But this subject is not sufficiently discussed in the literature. The paper is devoted to the processes that occur at the surface of quantum dots during purification. A new method of purification, electrophoresis, is investigated and described in particular.

  11. Fractional decay of quantum dots in real photonic crystals

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Koenderink, A. Femius; Lodahl, Peter

    2008-01-01

    We show that fractional decay may be observable in experiments using quantum dots and photonic crystals with parameters that are currently achievable. We focus on the case of inverse opal photonic crystals and locate the position in the crystal where the effect is most pronounced. Furthermore, we...

  12. Peptide-mediated intracellular delivery of quantum dots

    DEFF Research Database (Denmark)

    Lagerholm, B Christoffer

    2007-01-01

    Quantum dots (QDs) have received a great amount of interest for use as fluorescent labels in biological applications. QDs are brightly fluorescent and very photostable, satisfying even imaging applications that require single molecule detection at high repetition rates over long periods of time...

  13. Quantum Dots Embedded in Graphene Nanoribbons by Chemical Substitution

    DEFF Research Database (Denmark)

    Carbonell-Sanroma, Eduard; Brandimarte, Pedro; Balog, Richard

    2017-01-01

    Bottom-up chemical reactions of selected molecular precursors on a gold surface can produce high quality graphene nanoribbons (GNRs). Here, we report on the formation of quantum dots embedded in an armchair GNR by substitutional inclusion of pairs of boron atoms into the GNR backbone. The boron...

  14. Multi-Color Single Particle Tracking with Quantum Dots

    DEFF Research Database (Denmark)

    Christensen, Eva Arnspang; Brewer, J. R.; Lagerholm, B. C.

    2012-01-01

    Quantum dots (QDs) have long promised to revolutionize fluorescence detection to include even applications requiring simultaneous multi-species detection at single molecule sensitivity. Despite the early promise, the unique optical properties of QDs have not yet been fully exploited in e. g...

  15. Thermoelectric effects in molecular quantum dots with contacts

    Czech Academy of Sciences Publication Activity Database

    Koch, T.; Loos, Jan; Fehske, H.

    2014-01-01

    Roč. 89, č. 15 (2014), "155133-1"-"155133-11" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : theory of electronic transport * scattering mechanisms * polarons and electron-phonon interactions * quantum dots Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  16. Theory of coherent dynamic nuclear polarization in quantum dots

    DEFF Research Database (Denmark)

    Neder, Izhar; Rudner, Mark Spencer; Halperin, Bertrand

    2014-01-01

    We consider the production of dynamic nuclear spin polarization (DNP) in a two-electron double quantum dot, in which the electronic levels are repeatedly swept through a singlet-triplet avoided crossing. Our analysis helps to elucidate the intriguing interplay between electron-nuclear hyperfine...

  17. Anomalous temperature dependence of excitation transfer between quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 325-330 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) LD14011; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : excitation transfer * quantum dots * temperature dependence * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  18. Dephasing in InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang Werner; Mørk, Jesper

    1999-01-01

    The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning...

  19. THz Electro-absorption Effect in Quantum Dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Monozon, Boris S.; Livshits, Daniil A.

    2011-01-01

    In a THz pump - optical probe experiment we demonstrate an instantaneous electro-absorption effect in InGaAs/GaAs quantum dots, induced by the electric field of a single-cycle THz pulse with 3 THz bandwidth and with free-space peak electric field reaching 220 kV/cm. The transient modulation of QD...

  20. Spontaneous emission of quantum dots in disordered photonic crystal waveguides

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2010-01-01

    We report on the enhancement of the spontaneous emission rate of single semiconductor quantum dots embedded in a photonic crystal waveguide with engineered disorder. Random high-Q cavities, that are signature of Anderson localization, are measured in photoluminescence experiments and appear in th...

  1. Magnetic anisotropies of quantum dots doped with magnetic ions

    Czech Academy of Sciences Publication Activity Database

    Výborný, Karel; Han, J.E.; Oszwałdowski, R.; Žutić, I.; Petukhov, A.G.

    2012-01-01

    Roč. 85, č. 15 (2012), "155312-1"-"155312-8" ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetocrystalline anisotropy * quantum dot s * dilute magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012

  2. Ultrafast Terahertz Dynamics and Switching in Quantum Dots

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2012-01-01

    In this Chapter we describe the experimental studies of ultrafast carrier dynamics and all-optical switching in semiconductor quantum dots (QDs) using ultrafast terahertz (THz) techniques. In the first part of this chapter we describe the studies of carrier capture into the QDs, and thermionic...

  3. Quantum dots trace lymphatic drainage from the mouse eye

    Science.gov (United States)

    Tam, Alex L. C.; Gupta, Neeru; Zhang, Zhexue; Yücel, Yeni H.

    2011-10-01

    Glaucoma is a leading cause of blindness in the world, often associated with elevated eye pressure. Currently, all glaucoma treatments aim to lower eye pressure by improving fluid exit from the eye. We recently reported the presence of lymphatics in the human eye. The lymphatic circulation is known to drain fluid from organ tissues and, as such, lymphatics may also play a role in draining fluid from the eye. We investigated whether lymphatic drainage from the eye is present in mice by visualizing the trajectory of quantum dots once injected into the eye. Whole-body hyperspectral fluorescence imaging was performed in 17 live mice. In vivo imaging was conducted prior to injection, and 5, 20, 40 and 70 min, and 2, 6 and 24 h after injection. A quantum dot signal was observed in the left neck region at 6 h after tracer injection into the eye. Examination of immunofluorescence-labelled sections using confocal microscopy showed the presence of a quantum dot signal in the left submandibular lymph node. This is the first direct evidence of lymphatic drainage from the mouse eye. The use of quantum dots to image this lymphatic pathway in vivo is a novel tool to stimulate new treatments to reduce eye pressure and prevent blindness from glaucoma.

  4. Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

    DEFF Research Database (Denmark)

    Poel, Mike van der; Hvam, Jørn Märcher

    2007-01-01

    We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

  5. Site-controlled quantum dots coupled to photonic crystal waveguides

    DEFF Research Database (Denmark)

    Rigal, B.; de Lasson, Jakob Rosenkrantz; Jarlov, C.

    2016-01-01

    We demonstrate selective optical coupling of multiple, site controlled semiconductor quantum dots (QDs) to photonic crystal waveguide structures. The impact of the exact position and emission spectrum of the QDs on the coupling efficiency is elucidated. The influence of optical disorder and end...

  6. Exchange cotunneling through quantum dots with spin-orbit coupling

    DEFF Research Database (Denmark)

    Paaske, Jens; Andersen, Andreas; Flensberg, Karsten

    2010-01-01

    We investigate the effects of spin-orbit interaction (SOI) on the exchange cotunneling through a spinful Coulomb blockaded quantum dot. In the case of zero magnetic field, Kondo effect is shown to take place via a Kramers doublet and the SOI will merely affect the Kondo temperature. In contrast, we...

  7. Efficient eco-friendly inverted quantum dot sensitized solar cells

    NARCIS (Netherlands)

    Park, Jinhyung; Sajjad, Muhammad T.; Jouneau, Pierre-Henri; Ruseckas, Arvydas; Faure-Vincent, Jérôme; Samuel, Ifor D. W.; Reiss, Peter; Aldakov, Dmitry

    2016-01-01

    Recent progress in quantum dot (QD) sensitized solar cells has demonstrated the possibility of low-cost and efficient photovoltaics. However, the standard device structure based on n-type materials often suffers from slow hole injection rate, which may lead to unbalanced charge transport. We have

  8. Transport through a vibrating quantum dot: Polaronic effects

    Czech Academy of Sciences Publication Activity Database

    Koch, T.; Loos, Jan; Alvermann, A.; Bishop, A. R.; Fehske, H.

    2010-01-01

    Roč. 220, č. 1 (2010), 012014/1-012014/9 ISSN 1742-6588 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dot, * polaronic effects * low-temperature transport properties Subject RIV: BM - Solid Matter Physics ; Magnetism

  9. Quantum dots trace lymphatic drainage from the mouse eye

    Energy Technology Data Exchange (ETDEWEB)

    Tam, Alex L C; Gupta, Neeru; Zhang Zhexue; Yuecel, Yeni H, E-mail: yucely@smh.ca [Department of Ophthalmology and Vision Sciences, University of Toronto, M5T 2S8 (Canada)

    2011-10-21

    Glaucoma is a leading cause of blindness in the world, often associated with elevated eye pressure. Currently, all glaucoma treatments aim to lower eye pressure by improving fluid exit from the eye. We recently reported the presence of lymphatics in the human eye. The lymphatic circulation is known to drain fluid from organ tissues and, as such, lymphatics may also play a role in draining fluid from the eye. We investigated whether lymphatic drainage from the eye is present in mice by visualizing the trajectory of quantum dots once injected into the eye. Whole-body hyperspectral fluorescence imaging was performed in 17 live mice. In vivo imaging was conducted prior to injection, and 5, 20, 40 and 70 min, and 2, 6 and 24 h after injection. A quantum dot signal was observed in the left neck region at 6 h after tracer injection into the eye. Examination of immunofluorescence-labelled sections using confocal microscopy showed the presence of a quantum dot signal in the left submandibular lymph node. This is the first direct evidence of lymphatic drainage from the mouse eye. The use of quantum dots to image this lymphatic pathway in vivo is a novel tool to stimulate new treatments to reduce eye pressure and prevent blindness from glaucoma.

  10. Application of zinc oxide quantum dots in food safety

    Science.gov (United States)

    Zinc oxide quantum dots (ZnO QDs) are nanoparticles of purified powdered ZnO. The ZnO QDs were directly added into liquid foods or coated on the surface of glass jars using polylactic acid (PLA) as a carrier. The antimicrobial activities of ZnO QDs against Listeria monocytogenes, Salmonella Enteriti...

  11. Study of Streptavidin-Modified Quantum Dots by Capillary Electrophoresis

    Czech Academy of Sciences Publication Activity Database

    Stanisavljevic, M.; Janů, L.; Šmerková, K.; Křížková, S.; Pizúrová, Naděžda; Ryvolová, M.; Adam, V.; Hubálek, J.; Kizek, R.

    2013-01-01

    Roč. 76, 7-8 (2013), s. 335-343 ISSN 0009-5893 Institutional support: RVO:68081723 Keywords : Capillary electrophoresis * Gel electrophoresis * Avidin-biotin technology * Oligonucleotide * Nanoparticle * quantum dots Subject RIV: CE - Biochemistry Impact factor: 1.370, year: 2013

  12. Slow light in quantum dot photonic crystal waveguides

    DEFF Research Database (Denmark)

    Nielsen, Torben Roland; Lavrinenko, Andrei; Mørk, Jesper

    2009-01-01

    A theoretical analysis of pulse propagation in a semiconductor quantum dot photonic crystal waveguide in the regime of electromagnetically induced transparency is presented. The slow light mechanism considered here is based on both material and waveguide dispersion. The group index n...

  13. Bit-Serial Adder Based on Quantum Dots

    Science.gov (United States)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Mathew

    2003-01-01

    A proposed integrated circuit based on quantum-dot cellular automata (QCA) would function as a bit-serial adder. This circuit would serve as a prototype building block for demonstrating the feasibility of quantum-dots computing and for the further development of increasingly complex and increasingly capable quantum-dots computing circuits. QCA-based bit-serial adders would be especially useful in that they would enable the development of highly parallel and systolic processors for implementing fast Fourier, cosine, Hartley, and wavelet transforms. The proposed circuit would complement the QCA-based circuits described in "Implementing Permutation Matrices by Use of Quantum Dots" (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42 and "Compact Interconnection Networks Based on Quantum Dots" (NPO-20855), which appears elsewhere in this issue. Those articles described the limitations of very-large-scale-integrated (VLSI) circuitry and the major potential advantage afforded by QCA. To recapitulate: In a VLSI circuit, signal paths that are required not to interact with each other must not cross in the same plane. In contrast, for reasons too complex to describe in the limited space available for this article, suitably designed and operated QCA-based signal paths that are required not to interact with each other can nevertheless be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. To enable a meaningful description of the proposed bit-serial adder, it is necessary to further recapitulate the description of a quantum-dot cellular automation from the first-mentioned prior article: A quantum-dot cellular automaton contains four quantum dots positioned at the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the

  14. Multi-dimensional photonic states from a quantum dot

    Science.gov (United States)

    Lee, J. P.; Bennett, A. J.; Stevenson, R. M.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

    2018-04-01

    Quantum states superposed across multiple particles or degrees of freedom offer an advantage in the development of quantum technologies. Creating these states deterministically and with high efficiency is an ongoing challenge. A promising approach is the repeated excitation of multi-level quantum emitters, which have been shown to naturally generate light with quantum statistics. Here we describe how to create one class of higher dimensional quantum state, a so called W-state, which is superposed across multiple time bins. We do this by repeated Raman scattering of photons from a charged quantum dot in a pillar microcavity. We show this method can be scaled to larger dimensions with no reduction in coherence or single-photon character. We explain how to extend this work to enable the deterministic creation of arbitrary time-bin encoded qudits.

  15. Platinum assisted by carbon quantum dots for methanol electro-oxidation

    Science.gov (United States)

    Pan, Dan; Li, Xingwei; Zhang, Aofeng

    2018-01-01

    Various types of fuel cells as clean and portable power sources show a great attraction, especially direct methanol fuel cell (DMFC) having high energy density, low operating temperature and convenient fuel storage. However, the preparation of low-cost Pt-based catalysts with satisfactory catalytic performance still faces many challenges for its commercialization on large scale. Here, Pt catalysts assisted by carbon quantum dots (CQDs) are reported. The synergistic effect of carbon quantum dots and Pt metals is similar to a bi-component catalyst, such as PtRu. First, carbon quantum dots derived from Vulcan XC-72 carbon black are synthesized by mixed acid etching. Then, carbon black (Vulcan XC-72) is soaked in carbon quantum dots solution for several days to obtain carbon black modified by carbon quantum dots (XC-72-CQDs). Finally, Pt catalysts are supported on XC-72-CQDs (Pt/XC-72-CQDs) through a simple chemical reduction method. For methanol electro-oxidation reaction, the catalytic performance of Pt/XC-72-CQDs is compared with commercial PtRu/C (30% Pt + 15% Ru). Results show that a typical product (Pt/XC-72-CQDs5) exhibits a better catalytic activity than PtRu/C. In cyclic voltammetry test, the specific activity of Pt/XC-72-CQDs5 is 1.06 mA cm-2 Pt and 477.6 mA mg-1 Pt, while that of PtRu/C is 0.77 mA cm-2 Pt and 280.6 mA mg-1 Pt.

  16. Sb2S3 Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode

    Directory of Open Access Journals (Sweden)

    You-Da Hsieh

    2015-01-01

    Full Text Available We propose a novel quantum-dot sensitized solar cell (QDSSC structure that employs a quantum dot/semiconductor silicon (QD/Si coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD method to synthesize a Sb2S3 quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2 sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3 deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.

  17. Colloidal-Quantum-Dot Ring Lasers with Active Color Control.

    Science.gov (United States)

    le Feber, Boris; Prins, Ferry; De Leo, Eva; Rabouw, Freddy T; Norris, David J

    2018-02-14

    To improve the photophysical performance of colloidal quantum dots for laser applications, sophisticated core/shell geometries have been developed. Typically, a wider bandgap semiconductor is added as a shell to enhance the gain from the quantum-dot core. This shell is designed to electronically isolate the core, funnel excitons to it, and reduce nonradiative Auger recombination. However, the shell could also potentially provide a secondary source of gain, leading to further versatility in these materials. Here we develop high-quality quantum-dot ring lasers that not only exhibit lasing from both the core and the shell but also the ability to switch between them. We fabricate ring resonators (with quality factors up to ∼2500) consisting only of CdSe/CdS/ZnS core/shell/shell quantum dots using a simple template-stripping process. We then examine lasing as a function of the optical excitation power and ring radius. In resonators with quality factors >1000, excitons in the CdSe cores lead to red lasing with thresholds at ∼25 μJ/cm 2 . With increasing power, green lasing from the CdS shell emerges (>100 μJ/cm 2 ) and then the red lasing begins to disappear (>250 μJ/cm 2 ). We present a rate-equation model that can explain this color switching as a competition between exciton localization into the core and stimulated emission from excitons in the shell. Moreover, by lowering the quality factor of the cavity we can engineer the device to exhibit only green lasing. The mechanism demonstrated here provides a potential route toward color-switchable quantum-dot lasers.

  18. Scintillation properties of quantum-dot doped styrene based plastic scintillators

    International Nuclear Information System (INIS)

    Park, J.M.; Kim, H.J.; Hwang, Y.S.; Kim, D.H.; Park, H.W.

    2014-01-01

    We fabricated quantum-dot doped plastic scintillators in order to control the emission wavelength. We studied the characterization of the quantum-dots (CdSe/ZnS) and PPO (2, 5-diphenyloxazole) doped styrene based plastic scintillators. PPO is usually used as a dopant to enhance the scintillation properties of organic scintillators with a maximum emission wavelength of 380 nm. In order to study the scintillation properties of the quantum-dots doped plastic scintillators, the samples were irradiated with X-ray, photon, and 45 MeV proton beams. We observed that only PPO doped plastic scintillators shows a luminescence peak around 380 nm. However, both the quantum-dots and PPO doped plastic scintillators shows luminescence peaks around 380 nm and 520 nm. Addition of quantum-dots had shifted the luminescence spectrum from 380 nm (PPO) toward the region of 520 nm (Quantum-dots). Emissions with wavelength controllable plastic scintillators can be matched to various kinds of photosensors such as photomultiplier tubes, photo-diodes, avalanche photo-diodes, and CCDs, etc. Also quantum-dots doped plastic scintillator, which is irradiated 45 MeV proton beams, shows that the light yield of quantum-dots doped plastic scintillator is increases as quantum-dots doping concentration increases at 520 nm. And also the plastic scintillators were irradiated with Cs-137 γ-ray for measuring fluorescence decay time. -- Highlights: • Quantum-dot doped plastic scintillator is grown by the thermal polymerization method. • Quantum-dot doped plastic scintillators can control the emission wavelength to match with photo-sensor. • Quantum-dots and PPO doped plastic scintillators emitted luminescence peaks around 380 nm and 520 nm. • We observed the energy transfer from PPO to quantum-dot in the quantum-dot doped plastic scintillator

  19. Coherently driven semiconductor quantum dot at a telecommunication wavelength.

    Science.gov (United States)

    Takagi, Hiroyuki; Nakaoka, Toshihiro; Watanabe, Katsuyuki; Kumagai, Naoto; Arakawa, Yasuhiko

    2008-09-01

    We proposed and demonstrate use of optical driving pulses at a telecommunication wavelength for exciton-based quantum gate operation. The exciton in a self-assembled quantum dot is coherently manipulated at 1.3 microm through Rabi oscillation. The telecom-band exciton-qubit system incorporates standard optical fibers and fiber optic devices. The coherent manipulation of the two-level system compatible with flexible and stable fiber network paves the way toward practical optical implementation of quantum information processing devices.

  20. Quantum-coherence-assisted tunable on- and off-resonance tunneling through a quantum-dot-molecule dielectric film

    International Nuclear Information System (INIS)

    Shen Jianqi; Zeng Ruixi

    2017-01-01

    Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on- and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates. (author)

  1. Autonomous quantum Maxwell's demon based on two exchange-coupled quantum dots

    Science.gov (United States)

    Ptaszyński, Krzysztof

    2018-01-01

    I study an autonomous quantum Maxwell's demon based on two exchange-coupled quantum dots attached to the spin-polarized leads. The principle of operation of the demon is based on the coherent oscillations between the spin states of the system which act as a quantum iSWAP gate. Due to the operation of the iSWAP gate, one of the dots acts as a feedback controller which blocks the transport with the bias in the other dot, thus inducing the electron pumping against the bias; this leads to the locally negative entropy production. Operation of the demon is associated with the information transfer between the dots, which is studied quantitatively by mapping the analyzed setup onto the thermodynamically equivalent auxiliary system. The calculated entropy production in a single subsystem and information flow between the subsystems are shown to obey a local form of the second law of thermodynamics, similar to the one previously derived for classical bipartite systems.

  2. Nanostructure assembly of indium sulphide quantum dots and their characterization.

    Science.gov (United States)

    Vigneashwari, B; Ravichandran, V; Parameswaran, P; Dash, S; Tyagi, A K

    2008-02-01

    Nanocrystals (approximately 5 nm) of the semiconducting wide band gap material beta-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of beta-In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of beta-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.

  3. Fluorescence and Bonding of Quantum Dots on DNA Origami Constructs

    Science.gov (United States)

    Kessinger, Matthew; Corrigan, Timothy; Neff, David; Norton, Michael; Concord University Collaboration; Marshall University Collaboration

    2015-03-01

    Semiconductor quantum dots (QDots) have historically been of interest to the scientific community since their creation for various applications ranging from solar energy to optical labeling. In this study, bioconjugated CdSe/ZnS core/shell QDots were synthesized and functionalized with 3-mercaptopropionic acid using both traditional ligand exchange as well as newly developed in situ functionalization techniques used to increase the quantum yield of the QDots. Their fluorescence and bonding to both gold as well as DNA origami were investigated for use in self assembled DNA constructs. It is believed that controlling the attachment and spacing of these nanoparticles on DNA origami could be used in a variety of optical labeling and sensing applications. Commercially available biotin and streptavidin functionalized quantum dots were also examined, and subject to the same experiments with gold nanoparticles as the MPA functionalized QDots.

  4. Open quantum dots: Physics of the non-Hermitian Hamiltonian

    Energy Technology Data Exchange (ETDEWEB)

    Ferry, D.K.; Akis, R. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe AZ 85287-5706 (United States); Burke, A.M. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe AZ 85287-5706 (United States); School of Physics, The University of New South Wales, Sydney (Australia); Knezevic, I. [Department of Electrical Engineering, University of Wisconsin, Madison WI 53706 (United States); Brunner, R.; Meisels, R.; Kuchar, F. [Institut fuer Physik, Montanuniversitaet Leoben, 8700 Leoben (Austria); Bird, J.P.; Bird, J.P. [Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260 (United States)

    2013-02-15

    Quantum dots provide a natural system in which to study both classical and quantum features of transport, as they possess a very rich set of eigenstates.When coupled to the environment through a pair of quantum point contacts, these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. In this latter case, many of the eigenstates are decohered through interaction with the environment, but many survive and are referred to as the set of pointer states. These latter states are described by a projected, non-Hermitian Hamiltonian which describes their dissipation through many-body interactions with particles in the external environment. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Quantum dot as a spin-current diode: A master-equation approach

    DEFF Research Database (Denmark)

    Souza, F.M.; Egues, J.C.; Jauho, Antti-Pekka

    2007-01-01

    We report a study of spin-dependent transport in a system composed of a quantum dot coupled to a normal metal lead and a ferromagnetic lead NM-QD-FM. We use the master equation approach to calculate the spin-resolved currents in the presence of an external bias and an intradot Coulomb interaction....... We find that for a range of positive external biases current flow from the normal metal to the ferromagnet the current polarization =I↑−I↓ / I↑+I↓ is suppressed to zero, while for the corresponding negative biases current flow from the ferromagnet to the normal metal attains a relative maximum value....... The system thus operates as a rectifier for spin-current polarization. This effect follows from an interplay between Coulomb interaction and nonequilibrium spin accumulation in the dot. In the parameter range considered, we also show that the above results can be obtained via nonequilibrium Green functions...

  6. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)

    2015-08-30

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

  7. Cobalt micro-magnet integration on silicon MOS quantum dots

    Science.gov (United States)

    Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

    Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  8. A split accumulation gate architecture for silicon MOS quantum dots

    Science.gov (United States)

    Rochette, Sophie; Rudolph, Martin; Roy, Anne-Marie; Curry, Matthew; Ten Eyck, Gregory; Dominguez, Jason; Manginell, Ronald; Pluym, Tammy; King Gamble, John; Lilly, Michael; Bureau-Oxton, Chloé; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    We investigate tunnel barrier modulation without barrier electrodes in a split accumulation gate architecture for silicon metal-oxide-semiconductor quantum dots (QD). The layout consists of two independent accumulation gates, one gate forming a reservoir and the other the QD. The devices are fabricated with a foundry-compatible, etched, poly-silicon gate stack. We demonstrate 4 orders of magnitude of tunnel-rate control between the QD and the reservoir by modulating the reservoir gate voltage. Last electron charging energies of app. 10 meV and tuning of the ST splitting in the range 100-200 ueV are observed in two different split gate layouts and labs. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  9. Peptide mediated intracellular delivery of semiconductor quantum dots

    Science.gov (United States)

    Kapur, Anshika; Safi, Malak; Domitrovic, Tatiana; Medina, Scott; Palui, Goutam; Johnson, John E.; Schneider, Joel; Mattoussi, Hedi

    2017-02-01

    As control over the growth, stabilization and functionalization of inorganic nanoparticles continue to advance, interest in integrating these materials with biological systems has steadily grown in the past decade. Much attention has been directed towards identifying effective approaches to promote cytosolic internalization of the nanoparticles while avoiding endocytosis. We describe the use of NωV virus derived gamma peptide and a chemically synthesized anticancer peptide, SVS-1 peptide, as vehicles to promote the non-endocytic uptake of luminescent quantum dots (QDs) inside live cells. The gamma peptide is expressed in E. coli as a fusion protein with poly-his tagged MBP (His-MBP-γ) to allow self-assembly onto QDs via metal-histidine conjugation. Conversely, the N-terminal cysteine residue of the SVS-1 peptide is attached to the functionalized QDs via covalent coupling chemistry. Epi-fluorescence microscopy images show that the QD-conjugate staining is distributed throughout the cytoplasm of cell cultures. Additionally, the QD staining does not show co-localization with transferrin-dye-labelled endosomes or DAPI stained nuclei. The QD uptake observed in the presence of physical and pharmacological endocytosis inhibitors further suggest that a physical translocation of QDs through the cell membrane is the driving mechanism for the uptake.

  10. Nanotoxicity assessment of quantum dots: from cellular to primate studies.

    Science.gov (United States)

    Yong, Ken-Tye; Law, Wing-Cheung; Hu, Rui; Ye, Ling; Liu, Liwei; Swihart, Mark T; Prasad, Paras N

    2013-02-07

    Tremendous research efforts have been devoted to fabricating high quality quantum dots (QDs) for applications in biology and medicine. Much of this research was pursued with an ultimate goal of using QDs in clinical applications. However, a great deal of concern has been voiced about the potential hazards of QDs due to their heavy-metal content. Many studies have demonstrated toxicity of various QDs in cell culture studies. However, in a smaller number of studies using small animal models (mice and rats), no abnormal behaviour or tissue damage was noticed over periods of months after the systemic administration of QDs. Nevertheless, the correlation of these results with the potential for negative effects of QD on humans remains unclear. Many urgent questions must be answered before the QDs community moves into the clinical research phase. This review provides an overview of the toxicity assessment of QDs, ranging from cell culture studies to animal models and discusses their findings. Guidelines for using various nonhuman primate models for QD toxicity studies are highlighted. This review article is intended to promote the awareness of current developments of QD applications in biology, the potential toxicity of QDs, and approaches to minimizing toxicity.

  11. Evidence for possible quantum dot interdiffusion induced by cap layer growth

    International Nuclear Information System (INIS)

    Jasinski, J.; Czeczott, M.; Gladysz, A.; Babinski, A.; Kozubowski, J.

    1999-01-01

    Self-organised InGaAs quantum dots were grown on (001) GaAs substrates and covered with two different types of cap layers grown at significantly different temperatures. In order to determine quantum dot emission energy and dot size distribution, photoluminescence and transmission electron microscopy studies were carried out on such samples. Simple theoretical model neglecting effect of interdiffusion allowed for correlation between quantum dot size and photoluminescence emission energy only in the case of dots covered by cap layers grown at the lower temperature. For dots covered by layers grown at the higher temperature such correlation was possible only when strong interdiffusion was assumed. (author)

  12. Classical behavior of few-electron parabolic quantum dots

    International Nuclear Information System (INIS)

    Ciftja, O.

    2009-01-01

    Quantum dots are intricate and fascinating systems to study novel phenomena of great theoretical and practical interest because low dimensionality coupled with the interplay between strong correlations, quantum confinement and magnetic field creates unique conditions for emergence of fundamentally new physics. In this work we consider two-dimensional semiconductor quantum dot systems consisting of few interacting electrons confined in an isotropic parabolic potential. We study the many-electron quantum ground state properties of such systems in presence of a perpendicular magnetic field as the number of electrons is varied using exact numerical diagonalizations and other approaches. The results derived from the calculations of the quantum model are then compared to corresponding results for a classical model of parabolically confined point charges who interact with a Coulomb potential. We find that, for a wide range of parameters and magnetic fields considered in this work, the quantum ground state energy is very close to the classical energy of the most stable classical configuration under the condition that the classical energy is properly adjusted to incorporate the quantum zero point motion.

  13. Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

    KAUST Repository

    Pattantyus-Abraham, Andras G.

    2010-06-22

    Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power conversion efficiencies. Two distinct device architectures and operating mechanisms have been advanced. The first-the Schottky device-was optimized and explained in terms of a depletion region driving electron-hole pair separation on the semiconductor side of a junction between an opaque low-work-function metal and a p-type CQD film. The second-the excitonic device-employed a CQD layer atop a transparent conductive oxide (TCO) and was explained in terms of diffusive exciton transport via energy transfer followed by exciton separation at the type-II heterointerface between the CQD film and the TCO. Here we fabricate CQD photovoltaic devices on TCOs and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation, and that they also exploit the large bandgap of the TCO to improve rectification and block undesired hole extraction. The resultant depletedheterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS CQDs, enabling broadband harvesting of the solar spectrum. We report the highest opencircuit voltages observed in solid-state CQD solar cells to date, as well as fill factors approaching 60%, through the combination of efficient hole blocking (heterojunction) and very small minority carrier density (depletion) in the large-bandgap moiety. © 2010 American Chemical Society.

  14. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

    OpenAIRE

    Alkhatib, Amro; Nayfeh, Ammar

    2013-01-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10?nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum ...

  15. Andreev bound states probed in three-terminal quantum dots

    Science.gov (United States)

    Gramich, J.; Baumgartner, A.; Schönenberger, C.

    2017-11-01

    Andreev bound states (ABSs) are well-defined many-body quantum states that emerge from the hybridization of individual quantum dot (QD) states with a superconductor and exhibit very rich and fundamental phenomena. We demonstrate several electron transport phenomena mediated by ABSs that form on three-terminal carbon nanotube (CNT) QDs, with one superconducting (S) contact in the center and two adjacent normal-metal (N) contacts. Three-terminal spectroscopy allows us to identify the coupling to the N contacts as the origin of the Andreev resonance (AR) linewidths and to determine the critical coupling strengths to S, for which a ground state (or quantum phase) transition in such S-QD systems can occur. In addition, we ascribe replicas of the lowest-energy ABS resonance to transitions between the ABS and odd-parity excited QD states, a process we call excited state ABS resonances. In the conductance between the two N contacts we find a characteristic pattern of positive and negative differential subgap conductance, which we explain by considering two nonlocal processes, the creation of Cooper pairs in S by electrons from both N terminals, and a transport mechanism we call resonant ABS tunneling, possible only in multiterminal QD devices. In the latter process, electrons are transferred via the ABS without effectively creating Cooper pairs in S. The three-terminal geometry also allows spectroscopy experiments with different boundary conditions, for example by leaving S floating. Surprisingly, we find that, depending on the boundary conditions and the device parameters, the experiments either show single-particle Coulomb blockade resonances, ABS characteristics, or both in the same measurements, seemingly contradicting the notion of ABSs replacing the single-particle states as eigenstates of the QD. We qualitatively explain these results as originating from the finite time scale required for the coherent oscillations between the superposition states after a single

  16. Injection of a single electron from static to moving quantum dots.

    Science.gov (United States)

    Bertrand, Benoit; Hermelin, Sylvain; Mortemousque, Pierre-André; Takada, Shintaro; Yamamoto, Michihisa; Tarucha, Seigo; Ludwig, Arne; Wieck, Andreas D; Bäuerle, Christopher; Meunier, Tristan

    2016-05-27

    We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot. The moving quantum dots are created with surface acoustic waves (SAWs) in a long depleted channel. We demonstrate that the injection process is characterized by an activation law with a threshold that depends on the SAW amplitude and on the dot-channel potential gradient. By sufficiently increasing the SAW modulation amplitude, we can reach a regime where the transfer has unity probability and is potentially adiabatic. This study points to the relevant regime to use moving dots in quantum information protocols.

  17. Transport in quantum spin Hall edges in contact to a quantum dot

    Science.gov (United States)

    Rizzo, Bruno; Camjayi, Alberto; Arrachea, Liliana

    2016-09-01

    We study the transport mechanisms taking place in a quantum spin Hall bar with an embedded quantum dot, where electrons localize and experience Coulomb interaction U as well as spin-flip processes λ . We solve the problem with nonequilibrium Green functions. We focus on the linear-response regime and treat the many-body interactions with quantum Monte Carlo. The effects of U and λ are competitive and the induced transport takes place through different channels. The two mechanisms can be switched by changing the occupation of the dot with a gate voltage.

  18. Assessing clinical prospects of silicon quantum dots: studies in mice and monkeys.

    Science.gov (United States)

    Liu, Jianwei; Erogbogbo, Folarin; Yong, Ken-Tye; Ye, Ling; Liu, Jing; Hu, Rui; Chen, Hongyan; Hu, Yazhuo; Yang, Yi; Yang, Jinghui; Roy, Indrajit; Karker, Nicholas A; Swihart, Mark T; Prasad, Paras N

    2013-08-27

    Silicon nanocrystals can provide the outstanding imaging capabilities of toxic heavy-metal-based quantum dots without employing heavy metals and have potential for rapid progression to the clinic. Understanding the toxicity of silicon quantum dots (SiQDs) is essential to realizing this potential. However, existing studies of SiQD biocompatibility are limited, with no systematic progression from small-animal to large-animal studies that are more clinically relevant. Here, we test the response of both mice and monkeys to high intravenous doses of a nanoconstruct created using only SiQDs and FDA-approved materials. We show that (1) neither mice nor monkeys show overt signs of toxicity reflected in their behavior, body mass, or blood chemistry, even at a dose of 200 mg/kg. (2) This formulation did not biodegrade as expected. Elevated levels of silicon were present in the liver and spleen of mice three months post-treatment. (3) Histopathology three months after treatment showed adverse effects of the nanoformulation in the livers of mice, but showed no such effects in monkeys. This investigation reveals that the systemic reactions of the two animal models may have some differences and there are no signs of toxicity clearly attributable to silicon quantum dots.

  19. Room-Temperature Dephasing in InAs Quantum Dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    2000-01-01

    The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection......, a dephasing time of ~260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due...

  20. Influences of a Side-Coupled Triple Quantum Dot on Kondo Transport Through a Quantum Dot

    International Nuclear Information System (INIS)

    Jiang Zhaotan; Yang Yannan; Qin Zhijie

    2010-01-01

    Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QD structure are systematically investigated by using the non-equilibrium Green's function method. We firstly derive the formulae of the current, the linear conductance, the transmission coefficient, and the local density of states. Then we carry out the analytical and numerical studies and some universal conductance properties are obtained. It is shown that the number of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the number of the QDs included in the side-coupled structure in the asymmetric limit. In the process of forming the conductance valleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and the side-coupled structure play the subsidiary and indispensable roles. To testify the validity of the universal conductance properties, another different kinds of side-coupled triple-QD structures are considered. It should be emphasized that these universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.