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Sample records for metal oxide thin

  1. Thin film hydrous metal oxide catalysts

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  2. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  3. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  4. Metal oxide semiconductor thin-film transistors for flexible electronics

    Science.gov (United States)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  5. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  6. Energetic Surface Smoothing of Complex Metal-Oxide Thin Films

    International Nuclear Information System (INIS)

    Willmott, P.R.; Herger, R.; Schlepuetz, C.M.; Martoccia, D.; Patterson, B.D.

    2006-01-01

    A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of La 1-x Sr x MnO 3 on SrTiO 3 , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of ΔT≅500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials

  7. Tin etching from metallic and oxidized scandium thin films

    NARCIS (Netherlands)

    Pachecka, Malgorzata; Lee, Christopher James; Sturm, J.M.; Bijkerk, Frederik

    The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show

  8. Tin etching from metallic and oxidized scandium thin films

    Directory of Open Access Journals (Sweden)

    M. Pachecka

    2017-08-01

    Full Text Available The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show that Sn adsorbs rather weakly to a non-oxidized Sc surface, and is etched relatively easily by atomic hydrogen. In contrast, the presence of native oxide on Sc allows Sn to adsorb more strongly to the surface, slowing the etching. Furthermore, thinner layers of scandium oxide result in weaker Sn adsorption, indicating that the layer beneath the oxide plays a significant role in determining the adsorption strength. Unexpectedly, for Sn on Sc2O3, and, to a lesser extent, for Sn on Sc, the etch rate shows a variation over time, which is explained by surface restructuring, temperature change, and hydrogen adsorption saturation.

  9. Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

    OpenAIRE

    Henley, SJ; Carey, JD; Silva, SRP

    2005-01-01

    he mechanisms controlling the nanostructuring of thin metal-on-oxide films by nanosecond pulsed excimer lasers are investigated. When permitted by the interfacial energetics, the breakup of the metal film into nanoscale islands is observed. A range of metals (Au, Ag, Mo, Ni, Ti, and Zn) with differing physical and thermodynamic properties, and differing tendencies for oxide formation, are investigated. The nature of the interfacial metal-substrate interaction, the thermal conductivity of the ...

  10. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States); McGlone, J.M.; Landau, N.P.; Wager, J.F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 (United States); Stickle, W.F. [Hewlett-Packard Company, Corvallis, OR 97333 (United States); Herman, G.S., E-mail: greg.herman@oregonstate.edu [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States)

    2015-11-30

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni (< 30 min), and then by outward diffusion of Zr (> 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  11. Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

    DEFF Research Database (Denmark)

    Reolon, R. P.; Sanna, S.; Xu, Yu

    2018-01-01

    A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte...

  12. Oxide nanostructures hyperbranched with thin and hollow metal shells for high-performance nanostructured battery electrodes.

    Science.gov (United States)

    Xia, Xinhui; Xiong, Qinqin; Zhang, Yongqi; Tu, Jiangping; Ng, Chin Fan; Fan, Hong Jin

    2014-06-25

    High-performance electrochemical energy storage (EES) devices require the ability to modify and assemble electrode materials with superior reactivity and structural stability. The fabrication of different oxide/metal core-branch nanoarrays with adjustable components and morphologies (e.g., nanowire and nanoflake) is reported on different conductive substrates. Hollow metal branches (or shells) wrapped around oxide cores are realized by electrodeposition using ZnO nanorods as a sacrificial template. In battery electrode application, the thin hollow metal branches can provide a mechanical protection of the oxide core and a highly conductive path for charges. As a demonstration, arrays of Co3O4/Ni core-branch nanowires are evaluated as the anode for lithium ion batteries. The thin metal branches evidently improve the electrochemical performance with higher specific capacity, rate capability, and capacity retention than the unmodified Co3O4 counterparts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  14. Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

    Science.gov (United States)

    Zhu, Shuanglin

    Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

  15. The growth of thin film epitaxial oxide-metal heterostructures

    CERN Document Server

    Wang, C

    1998-01-01

    films with lowest IR emissivity are those made from the purest targets despite their having comparable roughnesses to films from lower purity targets. The lowest emissivity achieved was in the range of 1.64% to 1.72% measured at 3.8 mu m for 1.5 to 1.8 mu m thick films. Modifications to standard idealized Drude theory have been made which, in a phenomenological way, take account of imperfections in the sputtered Al film, oxidation state and roughness. in electric properties of the Nb film and the reduction in crystalline quality of the MgO layer. The reduction of transition temperature to the superconducting state, Tc, and the similarly systematic increase in the Nb lattice parameter were observed consistent with oxygen content data reported in the literature, as the Nb became heavily oxidized. Examination of the surface of clean and oxidized Nb by atomic force microscopy, and deposition of MgO in UHV onto a previously oxidized Nb surface, suggested that the decrease in crystalline quality of the MgO can be a...

  16. Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

    International Nuclear Information System (INIS)

    Gasgnier, M.

    1980-01-01

    The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

  17. Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. B. DUPARE

    2009-02-01

    Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

  18. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  19. Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

    Science.gov (United States)

    Yamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-06-01

    The impact of thin Ga-oxide (GaOx) interlayers on the electrical properties of GaN-based metal-oxide-semiconductor (MOS) devices was systematically investigated. Thin thermal oxides formed at around 900 °C were found to be beneficial for improving the electrical properties of insulator/GaN interfaces, despite the fact that thermal oxidation of GaN surfaces at high temperatures proceeds by means of grain growth. Consequently, well-behaved capacitance-voltage characteristics of SiO2/GaOx/n-GaN stacked MOS capacitors with an interface state density (Dit) as low as 1.7 × 1011 cm-2 eV-1 were demonstrated. Moreover, the Dit value was further reduced for the SiO2/GaOx/GaN capacitor with a 2-nm-thick sputter-deposited GaOx interlayer. These results clearly indicate the intrinsically superior nature of the oxide/GaN interfaces and provide plausible guiding principles for fabricating high-performance GaN-MOS devices with thin GaOx interlayers.

  20. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  1. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  2. Oxidatively Electrodeposited Thin-Film Transition Metal (Oxy)hydroxides as Oxygen Evolution Catalysts.

    Science.gov (United States)

    Morales-Guio, Carlos G; Liardet, Laurent; Hu, Xile

    2016-07-20

    The electrolysis of water to produce hydrogen and oxygen is a simple and attractive approach to store renewable energies in the form of chemical fuels. The oxygen evolution reaction (OER) is a complex four-electron process that constitutes the most energy-inefficient step in water electrolysis. Here we describe a novel electrochemical method for the deposition of a family of thin-film transition metal (oxy)hydroxides as OER catalysts. The thin films have nanodomains of crystallinity with lattice spacing similar to those of double-layered hydroxides. The loadings of these thin-film catalysts were accurately determined with a resolution of below 1 μg cm(-2) using an electrochemical quartz microcrystal balance. The loading-activity relations for various catalysts were established using voltammetry and impedance spectroscopy. The thin-film catalysts have up to four types of loading-activity dependence due to film nucleation and growth as well as the resistance of the films. A zone of intrinsic activity has been identified for all of the catalysts where the mass-averaged activity remains constant while the loading is increased. According to their intrinsic activities, the metal oxides can be classified into three categories: NiOx, MnOx, and FeOx belong to category I, which is the least active; CoOx and CoNiOx belong to category II, which has medium activity; and FeNiOx, CoFeOx, and CoFeNiOx belong to category III, which is the most active. The high turnover frequencies of CoFeOx and CoFeNiOx at low overpotentials and the simple deposition method allow the fabrication of high-performance anode electrodes coated with these catalysts. In 1 M KOH and with the most active electrode, overpotentials as low as 240 and 270 mV are required to reach 10 and 100 mA cm(-2), respectively.

  3. Manipulating the Architecture of Atomically Thin Transition Metal (Hydr)oxides for Enhanced Oxygen Evolution Catalysis.

    Science.gov (United States)

    Dou, Yuhai; Zhang, Lei; Xu, Jiantie; He, Chun-Ting; Xu, Xun; Sun, Ziqi; Liao, Ting; Nagy, Balázs; Liu, Porun; Dou, Shi Xue

    2018-02-27

    Graphene-like nanomaterials have received tremendous research interest due to their atomic thickness and fascinating properties. Previous studies mainly focus on the modulation of their electronic structures, which undoubtedly optimizes the electronic properties, but is not the only determinant of performance in practical applications. Herein, we propose a generalized strategy to incrementally manipulate the architectures of several atomically thin transition metal (hydr)oxides, and study their effects on catalytic water oxidation. The results demonstrate the obvious superiority of a wrinkled nanosheet architecture in both catalytic activity and durability. For instance, wrinkled Ni(OH) 2 nanosheets display a low overpotential of 358.2 mV at 10 mA cm -2 , a high current density of 187.2 mA cm -2 at 500 mV, a small Tafel slope of 54.4 mV dec -1 , and excellent long-term durability with gradually optimized performance, significantly outperforming other nanosheet architectures and previously reported catalysts. The outstanding catalytic performance is mainly attributable to the 3D porous network structure constructed by wrinkled nanosheets, which not only provides sufficient contact between electrode materials and current collector, but also offers highly accessible channels for facile electrolyte diffusion and efficient O 2 escape. Our study provides a perspective on improving the performance of graphene-like nanomaterials in a wide range of practical applications.

  4. Chemical Processing for Sol-Gel Derived Metal Oxide Thin Films using Supercritical Carbon Dioxide Fluid

    Energy Technology Data Exchange (ETDEWEB)

    Asai, Y; Narishige, S; Fujioka, K; Uchida, H; Koda, S, E-mail: uchidah@sophia.ac.jp [Sophia University, Department of Materials and Life Sciences, Tokyo 102-8554 (Japan)

    2011-10-29

    Chemical processing using supercritical carbon dioxide fluid (scCO{sub 2}) was demonstrated for lowering processing temperature of sol-gel-derived metal oxide thin films. The film processing was performed in a hot-wall closed vessel filled with scCO{sub 2} fluid. Precursor films of titanium dioxide (TiO{sub 2}) on soda-glass substrates prepared by sol-gel coating using Ti-alkoxide solution were converted to crystalline TiO{sub 2} (anatase) films successfully by the scCO{sub 2} treatment at a fluid pressure of 15 MPa and a substrate temperature of 300deg. C whereas no crystallization was occurred by conventional heat treatment at 400 deg. C. XPS analysis indicated that the interface reaction related to Si element was suppressed successfully by scCO{sub 2} treatment at 300 deg. C. These results suggest that the sol-gel synthesis using scCO{sub 2} fluid would be a cadidate for low-temperature processing of crystalline oxide films, which is more preferable than conventional techniques based on the heat treatment.

  5. Flexible metal-oxide thin film transistor circuits for RFID and health patches

    NARCIS (Netherlands)

    Heremans, P.; Papadopoulos, N.; Jamblinne De Meux, A. de; Nag, M.; Steudel, S.; Rockele, M.; Gelinck, G.; Tripathi, A.; Genoe, J.; Myny, K.

    2016-01-01

    We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly

  6. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  7. Electrochemical Water Oxidation by a Catalyst-Modified Metal-Organic Framework Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Shaoyang; Pineda-Galvan, Yuliana; Maza, William A.; Epley, Charity C.; Zhu, Jie; Kessinger, Matthew C.; Pushkar, Yulia; Morris, Amanda J. (VP); (Purdue)

    2016-12-15

    Water oxidation, a key component in artificial photosynthesis, requires high overpotentials and exhibits slow reaction kinetics that necessitates the use of stable and efficient heterogeneous water-oxidation catalysts (WOCs). Here, we report the synthesis of UiO-67 metal–organic framework (MOF) thin films doped with [Ru(tpy)(dcbpy)OH2]2+ (tpy=2,2':6',2''-terpyridine, dcbpy=5,5'-dicarboxy-2,2'-bipyridine) on conducting surfaces and their propensity for electrochemical water oxidation. The electrocatalyst oxidized water with a turnover frequency (TOF) of (0.2±0.1) s-1 at 1.71 V versus the normal hydrogen electrode (NHE) in buffered solution (pH~7) and exhibited structural and electrochemical stability. The electroactive sites were distributed throughout the MOF thin film on the basis of scan-ratedependent voltammetry studies. This work demonstrates a promising way to immobilize large concentrations of electroactive WOCs into a highly robust MOF scaffold and paves the way for future photoelectrochemical water-splitting systems.

  8. Dendrimer patterning and electrochemical deposition of thin metal films atop dendrimer-mediated silicon oxide

    Science.gov (United States)

    Arrington, David Lavoe

    2008-04-01

    Microcontact printing is an effective method for creating patterns of molecules onto a surface. Patterned deposition of poly(amidoamine) (PAMAM) dendrimer multilayers onto silicon oxide surfaces are reported herein. Data analysis shows a correlation between dendrimer ink concentration and dendrimer film thickness. Thicker patterns can be achieved by using a more concentrated dendrimer solution. Multilayer structures are stable with respect to sonication and solvent rinsing. Monolayer patterns can be maintained with little degradation in the absence of water. The long-term stability of both monolayer patterns and multilayer patterns is discussed within. Multilayer PAMAM films can be constructed by reacting the surface-bound dendrimer with a co-polymer known as Gantrez. Alternating layers of PAMAM/Gantrez can be achieved, and the resulting films are stable over time. Another approach to constructing multilayer PAMAM films lies in the inclusion of copper ions. The divalent copper ion serves a coupler between adjacent layers of PAMAM. Other reports have illustrated the dendrimer's use as a template for creating metal nanoparticles. In this dissertation, the addition of UV radiation appears to accelerate the rate at which ions are reduced to metal, specifically copper. X-ray photoelectron spectroscopy provides evidence of metallic copper with and without UV irradiation, but the amount of metallic copper detected when using irradiation is significantly greater. The relationship between rate of metal reduction and irradiation time is discussed. Adherent copper films have been electrochemically grown onto PAMAM dendrimer-mediated silicon oxide surfaces. Metallic copper is grown at nucleation sites, associated with adsorbed dendrimers, and films can be observed above a metal thickness of about 2.5 mum. Higher coverage and increased adhesion were observed upon employing galvanostatic control of the deposition process. It is hypothesized that reduction of Cu+2 ions through

  9. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  10. Inkjet printing of metal-oxide-based transparent thin-film capacitors

    Science.gov (United States)

    Matavž, A.; Malič, B.; Bobnar, V.

    2017-12-01

    We report on the inkjet printing of transparent, thin-film capacitors (TTFCs) composed of indium-zinc-oxide electrodes and a tantalum-oxide-based dielectric on glass substrates. The printing parameters were adapted for the sequential deposition of functional layers, resulting in approximately 100-nm-thick transparent capacitors with a uniform thickness. The relatively high electrical resistivity of the electrodes is reflected in the frequency dispersive dielectric behaviour, which is explained in terms of an equivalent circuit. The resistivity of the electrode strongly decreases with the number of printing passes; consequently, any misalignment of the printed layers is detected in the measured response. At low frequency, the TTFCs show a stable intrinsic dielectric response and a high capacitance density of ˜280 nF/cm2. The good dielectric performance as well as the low leakage-current density (8 × 10-7 A/cm2 at 1 MV cm-1) of our capacitors indicates that inkjet printing can be used to produce all-printed, high-quality electrical devices.

  11. Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

    Directory of Open Access Journals (Sweden)

    Oyedotun K.O.

    2015-12-01

    Full Text Available Lithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS, UV-Vis spectrophotometry, X-ray diffraction (XRD spectroscopy, atomic force microscopy (AFM and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2 and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

  12. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  13. The Influence of Doping with Transition Metal Ions on the Structure and Magnetic Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Jenica Neamtu

    2014-01-01

    Full Text Available Zn1−xNixO (x=0.03÷0.10 and Zn1−xFexO (x=0.03÷0.15 thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM ions have been investigated by X-ray diffraction (XRD and atomic force microscopy (AFM. The magnetic studies were done using vibrating sample magnetometer (VSM at room temperature. Experimental results revealed that the substitution of Ni ions in ZnO wurtzite lattice for the contents x=0.03÷0.10 (Ni2+ leads to weak ferromagnetism of thin films. For Zn1-xFexO with x=0.03÷0.05, the Fe3+ ions are magnetic coupling by superexchange interaction via oxygen ions in wurtzite structure. For x=0.10÷0.15 (Fe3+ one can observe the increasing of secondary phase of ZnFe2O4 spinel. The Zn0.9Fe0.1O film shows a superparamagnetic behavior due to small crystallite sizes and the net spin magnetic moments arisen from the interaction between the iron ions through an oxygen ion in the spinel structure.

  14. Monolithic metal oxide transistors.

    Science.gov (United States)

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.

  15. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  16. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  17. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

    Science.gov (United States)

    Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Ning, Honglong; Peng, Junbiao

    2018-03-11

    A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance-voltage characteristics and current-voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson's equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously.

  18. A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Weifeng Chen

    2018-03-01

    Full Text Available A semi-analytical extraction method of interface and bulk density of states (DOS is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs. In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco. As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS simultaneously.

  19. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  20. Sensitivity enhancement of metal oxide thin film transistor with back gate biasing

    NARCIS (Netherlands)

    Dam, V.A.T.; Blauw, M.A.; Brongersma, S.H.; Crego-Calama, M.

    2011-01-01

    In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating

  1. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    CERN Document Server

    Adamian, A Z; Aroutiounian, V M

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi sub 2 O sub 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold.

  2. Adsorption smoke detector made of thin-film metal-oxide semiconductor sensor

    International Nuclear Information System (INIS)

    Adamian, A.Z.; Adamian, Z.N.; Aroutiounian, V.M.

    2001-01-01

    Based on results of investigations of the thin-film smoke sensors made of Bi 2 O 3 , irresponsive to a change in relative humidity of the environment, an absorption smoke detector processing circuit, where investigated sensor is used as a sensitive element, is proposed. It is shown that such smoke detector is able to function reliably under conditions of high relative humidity of the environment (up to 100%) and it considerably exceeds the known smoke detectors by the sensitivity threshold

  3. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    International Nuclear Information System (INIS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-01-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In 2 O 3 . The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10 −6 cm 2V−1s−1 , the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  4. Development of Novel Magnetic Metal Oxide Thin Films and Carbon Nanotube Materials for Potential Device Applications

    Science.gov (United States)

    2016-05-09

    magnetic layer more than the deficiency of O2. In a spinel structure the Co2+ and Fe3+ ions are shared between 16 octahedral and 8 tetrahedral sites...stoichiometry of the cobalt- ferrite . We also enhanced the blocking field of the trilayer by depositing the soft magnetic layer in an applied field. Compared...epitaxial cobalt ferrite thin films, Phys. Rev. B 76, 054405 (2007). 5. J-G Lee, K. PyoChae and J. Chul Sur, Surface morphology and magnetic properties of

  5. Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO3).

    Science.gov (United States)

    Chen, Jie; Morrow, Darien J; Fu, Yongping; Zheng, Weihao; Zhao, Yuzhou; Dang, Lianna; Stolt, Matthew J; Kohler, Daniel D; Wang, Xiaoxia; Czech, Kyle J; Hautzinger, Matthew P; Shen, Shaohua; Guo, Liejin; Pan, Anlian; Wright, John C; Jin, Song

    2017-09-27

    High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3 ) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3 (100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer-Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s -1 ), and low defect density of 10 12 cm -3 , which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. The high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.

  6. Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.

    Science.gov (United States)

    Labram, John G; Lin, Yen-Hung; Anthopoulos, Thomas D

    2015-11-04

    In the last decade, metal oxides have emerged as a fascinating class of electronic material, exhibiting a wide range of unique and technologically relevant characteristics. For example, thin-film transistors formed from amorphous or polycrystalline metal oxide semiconductors offer the promise of low-cost, large-area, and flexible electronics, exhibiting performances comparable to or in excess of incumbent silicon-based technologies. Atomically flat interfaces between otherwise insulating or semiconducting complex oxides, are also found to be highly conducting, displaying 2-dimensional (2D) charge transport properties, strong correlations, and even superconductivity. Field-effect devices employing such carefully engineered interfaces are hoped to one day compete with traditional group IV or III-V semiconductors for use in the next-generation of high-performance electronics. In this Concept article we provide an overview of the different metal oxide transistor technologies and potential future research directions. In particular, we look at the recent reports of multilayer oxide thin-film transistors and the possibility of 2D electron transport in these disordered/polycrystalline systems and discuss the potential of the technology for applications in large-area electronics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Esro, M.; Adamopoulos, G., E-mail: g.adamopoulos@lancaster.ac.uk [Engineering Department, Lancaster University, Lancaster LA1 4YR (United Kingdom); Mazzocco, R.; Kolosov, O.; Krier, A. [Physics Department, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Vourlias, G. [Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Milne, W. I. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Department of Electrical and Computing Engineering, University of Canterbury, 4800 Christchurch (New Zealand)

    2015-05-18

    We report on ZnO-based thin-film transistors (TFTs) employing lanthanum aluminate gate dielectrics (La{sub x}Al{sub 1−x}O{sub y}) grown by spray pyrolysis in ambient atmosphere at 440 °C. The structural, electronic, optical, morphological, and electrical properties of the La{sub x}Al{sub 1−x}O{sub y} films and devices as a function of the lanthanum to aluminium atomic ratio were investigated using a wide range of characterization techniques such as UV-visible absorption spectroscopy, impedance spectroscopy, spectroscopic ellipsometry, atomic force microscopy, x-ray diffraction, and field-effect measurements. As-deposited LaAlO{sub y} dielectrics exhibit a wide band gap (∼6.18 eV), high dielectric constant (k ∼ 16), low roughness (∼1.9 nm), and very low leakage currents (<3 nA/cm{sup 2}). TFTs employing solution processed LaAlO{sub y} gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with hysteresis-free operation, low operation voltages (∼10 V), high on/off current modulation ratio of >10{sup 6}, subthreshold swing of ∼650 mV dec{sup −1}, and electron mobility of ∼12 cm{sup 2} V{sup −1} s{sup −1}.

  8. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Science.gov (United States)

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  9. Properties of NiO nanostructured growth using thermal dry oxidation of nickel metal thin film for hydrogen gas sensing at room temperature

    Science.gov (United States)

    Abubakar, Dauda; Ahmed, Naser M.; Mahmud, Shahrom; Algadri, Natheer A.

    2017-07-01

    A highly qualitative NiO nanostructure was synthesized using thermal dry oxidation of metallic Ni thin films on ITO/glass using the RF sputtering technique. The deposited nickel thin films were oxidized in air ambient at 550 °C inside a furnace. The structural and surface morphologies, and the electrical and gas sensing properties of the NiO nanostructure were examined. An x-ray diffraction analysis demonstrated that the NiO nanostructure has a cubic structure with orientation of the most intense peak at (2 0 0), and shows good crystalline quality. Finite-element scanning electron microscopy and energy dispersive x-ray spectroscopy results revealed O and Ni present in the treated samples, indicating a pure NiO nanostructure composition obtained with high porosity. The electrical properties of the oxidize Ni thin films showed a p-type NiO thin film semiconductor. A hydrogen gas sensing measurement was made at different operating temperatures and different gas concentrations with a detection limit of 30 ppm concentration. The sensor device shows great sensing properties with an excellent sensitivity (310%) at room temperature, which decreases with an increase in the operating temperature. Superfast response and recovery times of 6 and 0.5 s, respectively, were observed with the device at 150 °C operating temperature.

  10. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  11. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  12. Thin oxide-free phosphate films of composition formed on the surface of vanadium metal and characterized by x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Asunskis, D.J.; Sherwood, P.M.A.

    2006-01-01

    This article reports the preparation of thin (less than 100 A) oxide-free phosphate films of various compositions on vanadium metal. These films are interesting because of their potential for corrosion inhibition, adhesion promotion, and biocompatibility. Valence and core-level x-ray photoelectron spectroscopy (XPS) were used to characterize the films. The valence band spectra obtained were compared with spectra generated from band structure calculations for various vanadium phosphates and from previously reported spectra of vanadium phosphates. Vanadium phosphate coatings were created by the reaction of vanadium metal and different phosphorus-oxygen containing acids: H 3 PO 4 , H 3 PO 3 , H 3 PO 2 , and H 2 P 2 O 7 . This article focuses upon the valence band region which shows significant differences between the four vanadium phosphate films formed as well as clear differences between the these phosphates and vanadium oxides. The valence band spectra are effectively interpreted by band structure calculations

  13. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  14. Analyzing optical properties of thin vanadium oxide films through semiconductor-to-metal phase transition using spectroscopic ellipsometry

    Science.gov (United States)

    Sun, Jianing; Pribil, Greg K.

    2017-11-01

    We investigated the optical behaviors of vanadium dioxide (VO2) films through the semiconductor-to-metal (STM) phase transition using spectroscopic ellipsometry. Correlations between film thickness and refractive index were observed resulting from the absorbing nature of these films. Simultaneously analyzing data at multiple temperatures using Kramers-Kronig consistent oscillator models help identify film thickness. Nontrivial variations in resulting optical constants were observed through STM transition. As temperature increases, a clear increase is observed in near infrared absorption due to Drude losses that accompany the transition from semiconducting to metallic phases. Thin films grown on silicon and sapphire substrate present different optical properties and thermal hysteresis due to lattice stress and compositional differences.

  15. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  16. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    Transparent metal oxide thin films of samarium oxide (Sm 2 O 3 ) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure.

  17. Dry And Ringer Solution Lubricated Tribology Of Thin Osseoconductive Metal Oxides And Diamond-Like Carbon Films

    Directory of Open Access Journals (Sweden)

    Waldhauser W.

    2015-09-01

    Full Text Available Achieving fast and strong adhesion to jawbone is essential for dental implants. Thin deposited films may improve osseointegration, but they are prone to cohesive and adhesive fracture due to high stresses while screwing the implant into the bone, leading to bared, less osteoconductive substrate surfaces and nano- and micro-particles in the bone. Aim of this work is the investigation of the cohesion and adhesion failure stresses of osteoconductive tantalum, titanium, silicon, zirconium and aluminium oxide and diamond-like carbon films. The tribological behaviour under dry and lubricated conditions (Ringer solution reveals best results for diamond-like carbon, while cohesion and adhesion of zirconium oxide films is highest.

  18. Tunable transport property of oxygen ion in metal oxide thin film: Impact of electrolyte orientation on conductivity.

    Science.gov (United States)

    Arunkumar, P; Ramaseshan, R; Dash, S; Babu, K Suresh

    2017-06-14

    Quest for efficient ion conducting electrolyte thin film operating at intermediate temperature (~600 °C) holds promise for the real-world utilization of solid oxide fuel cells. Here, we report the correlation between mixed as well as preferentially oriented samarium doped cerium oxide electrolyte films fabricated by varying the substrate temperatures (100, 300 and 500 °C) over anode/ quartz by electron beam physical vapor deposition. Pole figure analysis of films deposited at 300 °C demonstrated a preferential (111) orientation in out-off plane direction, while a mixed orientation was observed at 100 and 500 °C. As per extended structural zone model, the growth mechanism of film differs with surface mobility of adatom. Preferential orientation resulted in higher ionic conductivity than the films with mixed orientation, demonstrating the role of growth on electrochemical properties. The superior ionic conductivity upon preferential orientation arises from the effective reduction of anisotropic nature and grain boundary density in highly oriented thin films in out-of-plane direction, which facilitates the hopping of oxygen ion at a lower activation energy. This unique feature of growing an oriented electrolyte over the anode material opens a new approach to solving the grain boundary limitation and makes it as a promising solution for efficient power generation.

  19. High-resolution structural studies of ultra-thin magnetic, transition metal overlayers and two-dimensional transition metal oxides using synchrotron radiation

    International Nuclear Information System (INIS)

    Kellar, S.A.; Lawrence Berkeley National Lab., CA

    1997-05-01

    This thesis report the surface-structure determination of three, ultra-thin magnetic transition-metal films, Fe/Au(100), Mn/Ni(100), and Mn/Cu(100) using Angle-Resolved Photoemission Extended Fine Structure (ARPEFS) and photoelectron holography. These structural studies are the first to use non-s initial states in the ARPEFS procedure. This thesis also reports an ARPEFS surface-structure determination of a two-dimensional transition-metal oxide, [(1 x 1)O/W(110)] x 12. The authors have analyzed the ARPFES signal from the Au 4f 7/5 core level of the Au(1 ML)/Fe(15 ML)/Au(100) system. The analysis shows that the Fe grows layer by layer with one monolayer of gold, acting as a surfactant, remaining on top of the growing Fe layers. These surface gold atoms sit in the four-fold hollow site, 1.67 ± 0.02 A above the iron surface. The grown Fe layer is very much like the bulk, bcc iron, with an interlayer spacing of 1.43 ± 0.03 A. Analysis of the Mn 3p ARPEFS signals from c(2 x 2)Mn/Ni(100) and c(2 x 2)Mn/Cu(100) shows that the Mn forms highly corrugated surface alloys. The corrugation of the Mn/Ni(100) and Mn/Cu(100) systems are 0.24 ± 0.02 A and 0.30 ± 0.04 A respectively. In both cases the Mn is sticking above the plane of the surface substrate atoms. For the Mn/Ni(100) system the first layer Ni is contracted 4% from the bulk value. The Mn/Cu(100) system shows bulk spacing for the substrate Cu. Photoelectron holography shows that the Mn/Ni interface is very abrupt with very little Mn leaking into the second layer, while the Mn/Cu(100) case has a significant amount of Mn leaking into the second layer. A new, five-element electrostatic electron lens was developed for hemispherical electron-energy analyzers. This lens system can be operated at constant transverse or constants angular magnification, and has been optimized for use with the very small photon-spot sizes. Improvements to the hemispherical electron-energy analyzer are also discussed

  20. High-resolution structural studies of ultra-thin magnetic, transition metal overlayers and two-dimensional transition metal oxides using synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Kellar, S.A. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry]|[Lawrence Berkeley National Lab., CA (United States). Advanced Light Source Div.

    1997-05-01

    This thesis report the surface-structure determination of three, ultra-thin magnetic transition-metal films, Fe/Au(100), Mn/Ni(100), and Mn/Cu(100) using Angle-Resolved Photoemission Extended Fine Structure (ARPEFS) and photoelectron holography. These structural studies are the first to use non-s initial states in the ARPEFS procedure. This thesis also reports an ARPEFS surface-structure determination of a two-dimensional transition-metal oxide, [(1 x 1)O/W(110)] x 12. The authors have analyzed the ARPFES signal from the Au 4f{sub 7/5} core level of the Au(1 ML)/Fe(15 ML)/Au(100) system. The analysis shows that the Fe grows layer by layer with one monolayer of gold, acting as a surfactant, remaining on top of the growing Fe layers. These surface gold atoms sit in the four-fold hollow site, 1.67 {+-} 0.02 A above the iron surface. The grown Fe layer is very much like the bulk, bcc iron, with an interlayer spacing of 1.43 {+-} 0.03 A. Analysis of the Mn 3p ARPEFS signals from c(2 x 2)Mn/Ni(100) and c(2 x 2)Mn/Cu(100) shows that the Mn forms highly corrugated surface alloys. The corrugation of the Mn/Ni(100) and Mn/Cu(100) systems are 0.24 {+-} 0.02 A and 0.30 {+-} 0.04 A respectively. In both cases the Mn is sticking above the plane of the surface substrate atoms. For the Mn/Ni(100) system the first layer Ni is contracted 4% from the bulk value. The Mn/Cu(100) system shows bulk spacing for the substrate Cu. Photoelectron holography shows that the Mn/Ni interface is very abrupt with very little Mn leaking into the second layer, while the Mn/Cu(100) case has a significant amount of Mn leaking into the second layer. A new, five-element electrostatic electron lens was developed for hemispherical electron-energy analyzers. This lens system can be operated at constant transverse or constants angular magnification, and has been optimized for use with the very small photon-spot sizes. Improvements to the hemispherical electron-energy analyzer are also discussed.

  1. Technologies for deposition of transition metal oxide thin films: application as functional layers in “Smart windows” and photocatalytic systems

    International Nuclear Information System (INIS)

    Gesheva, K; Ivanova, T; Bodurov, G; Szilágyi, I M; Justh, N; Kéri, O; Boyadjiev, S; Nagy, D; Aleksandrova, M

    2016-01-01

    “Smart windows” are envisaged for future low-energy, high-efficient architectural buildings, as well as for the car industry. By switching from coloured to fully bleached state, these windows regulate the energy of solar flux entering the interior. Functional layers in these devices are the transition metals oxides. The materials (transitional metal oxides) used in smart windows can be also applied as photoelectrodes in water splitting photocells for hydrogen production or as photocatalytic materials for self-cleaning surfaces, waste water treatment and pollution removal. Solar energy utilization is recently in the main scope of numerous world research laboratories and energy organizations, working on protection against conventional fuel exhaustion. The paper presents results from research on transition metal oxide thin films, fabricated by different methods - atomic layer deposition, atmospheric pressure chemical vapour deposition, physical vapour deposition, and wet chemical methods, suitable for flowthrough production process. The lower price of the chemical deposition processes is especially important when the method is related to large-scale glazing applications. Conclusions are derived about which processes are recently considered as most prospective, related to electrochromic materials and devices manufacturing. (paper)

  2. Metal Oxide Thin Films Grafted on Silica Gel Surfaces: Recent Advances on the Analytical Application of these Materials

    Directory of Open Access Journals (Sweden)

    Gushikem Yoshitaka

    2001-01-01

    Full Text Available In the highly dispersed MxOy monolayer film on a porous SiO2 surface, denoted as SiO2/MxOy, the Si-O-M covalent bond formed on the SiO2 surface restricts the mobility of the attached oxide resulting in coordinatively unsaturated metal oxides (LAS in addition to the Brønsted acid sites (BAS. The BAS arise from the MOH and SiOH groups, the latter due to the unreacted silanol groups. As the attached oxides are strongly immobilized on the surface, they are also thermally very stable. The amphoteric character of most of the attached oxides allows the immobilization of various chemical species, acid or bases, resulting in a wide application of these surface modified materials. In this work many of the recent applications of these MxOy coated silica surfaces are described, such as selective adsorbents, in preconcentration processes, as new packing material for use in HPLC, support for immobilization of enzymes, amperometric electrodes, sensors and biosensors

  3. Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method

    Science.gov (United States)

    Cheong, Woo-Seok; Shin, Jae-Heon; Byun, Chun-Won; Ryu, Minki; Hwang, Chi-Sun

    2009-04-01

    In this study, for the first time, Ag-doped SnO2 and Mo-doped ZnO films for transparent electrodes was explored by using a direct co-sputtering method in a non-oxidizing atmosphere, and successfully applied to source and drain electrodes of transparent thin-film transistors. Ag (˜4%)-doped SnO2 films has the low resistivity of 3.8 ×10-4 Ω cm, but the relatively low transmittance of ˜50%, after 300 °C for 1 h post-annealing in an O2 ambient. On the other hand, a shallow coating of Mo (2.3 nm) on Mo-doped ZnO electrode caused a hard-saturation behavior even at the low drain voltage (˜2 V), which can provide effective tools to current-driving devices, for example, active matrix-organic light emitting display (AM-OLED).

  4. Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

    Science.gov (United States)

    Jang, Hun; Lee, Su Jeong; Porte, Yoann; Myoung, Jae-Min

    2018-03-01

    In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 × 106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 × 1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 × 108.

  5. Thin metal electrodes for semitransparent organic photovoltaics

    KAUST Repository

    Lee, Kyusung

    2013-08-01

    We demonstrate semitransparent organic photovoltaics (OPVs) based on thin metal electrodes and polymer photoactive layers consisting of poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester. The power conversion efficiency of a semitransparent OPV device comprising a 15-nm silver (Ag) rear electrode is 1.98% under AM 1.5-G illumination through the indium-tin-oxide side of the front anode at 100 mW/cm2 with 15.6% average transmittance of the entire cell in the visible wavelength range. As its thickness increases, a thin Ag electrode mainly influences the enhancement of the short circuit current density and fill factor. Its relatively low absorption intensity makes a Ag thin film a viable option for semitransparent electrodes compatible with organic layers. © 2013 ETRI.

  6. Thin zirconium oxides

    International Nuclear Information System (INIS)

    Oviedo, Cristina

    2000-01-01

    Polycrystalline Zr and two pure Zr single-crystal samples, one oriented with the normal to the surface parallel to the c-axis of the hcp structure (Z1) and the other with the normal perpendicular to c (Z2), were oxidised at 10 -8 , 10 -7 and 10 -6 Torr and room temperature. Oxidation kinetics, composition and thicknesses of the oxide films formed in each case were analyzed using XPS (X-ray Photoelectron Spectroscopy) as the main technique. The oxidation kinetics followed logarithmic laws in all cases. The deconvolution of XPS Zr3d peaks indicated the formation of two Zr-O compounds before the formation of ZrO 2 . Varying the photoelectrons take-off angle, the compound distribution inside the oxide films could be established. Thus, it was confirmed that the most external oxide, in contact with the gas, was ZrO 2 . The thickness of the films grown at the different pressures was determined. In the polycrystalline samples, thicknesses between 15 and 19 ± 2Angstroem were obtained for pressures between 10 -8 and 10 -6 Torr, in close coincidence with the determined ones for Z2. The thicknesses measured in Z1 were smaller, reaching 13 ± 2Angstroem for the oxidations performed at 10 -6 Torr. (author)

  7. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  8. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  9. Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

    KAUST Repository

    Tetzner, Kornelius

    2017-11-01

    We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer\\'s surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.

  10. Structural, electrical and optical properties of indium tin oxide thin film grown by metal organic chemical vapor deposition with tetramethyltin-precursor

    Science.gov (United States)

    Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Wang, Gang

    2018-01-01

    Tin-doped indium oxide (ITO) is grown by metal organic chemical vapor deposition (MOCVD) using tetramethyltin (TDMASn) as tin precursor. The as-grown ITO films are polycrystalline with (111) and (100) textures. A gradual transition of crystallographic orientation from (111) preferred to (100) preferred is observed as the composition of tin changes. By precisely controlling the Sn doping, the ITO thin films present promising optical and electrical performances at either near-infrared-visible or visible-near-ultraviolet ranges. At low Sn doping level, the as-grown ITO possesses high electron mobility of 48.8 cm2 V‑1 s‑1, which results in high near-infrared transmittance and low resistivity. At higher Sn doping level, high carrier concentration (8.9 × 1020 cm‑3) and low resistivity (3 × 10‑4 Ω cm) are achieved. The transmittance is 97.8, 99.1, and 82.3% at the wavelength of 550, 365, and 320 nm, respectively. The results strongly suggest that MOCVD with TDMASn as tin precursor is an effective method to fabricate high quality ITO thin film for near-infrared, visible light, and near-ultraviolet application.

  11. Metal oxides for optoelectronic applications

    Science.gov (United States)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  12. Thin films of metal-organic compounds and metal nanoparticle

    Indian Academy of Sciences (India)

    Thin films of metal-organic compounds and metal nanoparticle-embedded polymers for nonlinear optical applications. S Philip Anthony Shatabdi Porel D ... Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which ...

  13. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Jae Sang Heo

    2017-06-01

    Full Text Available In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD. The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx and poly(4-vinylphenol (PVP, exhibited high dielectric constant (ε~8.15 and high-frequency-stable characteristics (1 MHz. Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs. Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric.

  14. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  15. Oxidation by metal salts

    International Nuclear Information System (INIS)

    Makhon'kov, D.I.; Cheprakov, A.V.; Rodkin, M.A.; Mil'chenko, A.Yu.; Beletskaya, I.P.

    1986-01-01

    Oxidation of toluene and para-substituted toluenes containing electron acceptor groups: p-toluic acid, p-methyltoluylate and p-nitrotoluene by ammonium cerium (4) nitrate and ammonium cerium (4) sulfate in aqueous solutions of trifluoroacetic acid in the presence of chlorides and bromides of alkali metals is studied. The rate and selectivity of oxidative halogenation in side chain and/or aromatic ring under the conditions studied depend both on the nature of substrate and halogenide-ion and on the reaction conditions and ligand surrounding of cerium (4) atom

  16. Temperature Gradient Effect on Gas Discrimination Power of a Metal-Oxide Thin-Film Sensor Microarray

    Directory of Open Access Journals (Sweden)

    Joachim Goschnick

    2004-05-01

    Full Text Available Abstract: The paper presents results concerning the effect of spatial inhomogeneous operating temperature on the gas discrimination power of a gas-sensor microarray, with the latter based on a thin SnO2 film employed in the KAMINA electronic nose. Three different temperature distributions over the substrate are discussed: a nearly homogeneous one and two temperature gradients, equal to approx. 3.3 oC/mm and 6.7 oC/mm, applied across the sensor elements (segments of the array. The gas discrimination power of the microarray is judged by using the Mahalanobis distance in the LDA (Linear Discrimination Analysis coordinate system between the data clusters obtained by the response of the microarray to four target vapors: ethanol, acetone, propanol and ammonia. It is shown that the application of a temperature gradient increases the gas discrimination power of the microarray by up to 35 %.

  17. Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

    Science.gov (United States)

    2015-02-25

    200 nm thick amor - phous Zn 0.3 In 1.4 Sn 0.3 O 3 (a-ZITO) fi lm was deposited on Ary- lite by pulsed laser deposition (PLD) to function as the gate...level. Thus, appropriate polymer incorporation promotes the amor - phous state but allows a suffi cient density of connected InO x polyhedra for effi...continuous and uniform. In conclusion, we have successfully developed a new low temperature route (as low as 225 °C) to high-mobility amor - phous metal

  18. Dielectric properties of thin C r2O3 films grown on elemental and oxide metallic substrates

    Science.gov (United States)

    Mahmood, Ather; Street, Michael; Echtenkamp, Will; Kwan, Chun Pui; Bird, Jonathan P.; Binek, Christian

    2018-04-01

    In an attempt to optimize leakage characteristics of α-C r2O3 thin films, its dielectric properties were investigated at local and macroscopic scale. The films were grown on Pd(111), Pt(111), and V2O3 (0001), supported on A l2O3 substrate. The local conductivity was measured by conductive atomic force microscopy mapping of C r2O3 surfaces, which revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A strong correlation was found between these electrical defects and the grain boundaries revealed in the corresponding topographic scans. In comparison, the C r2O3 film on V2O3 exhibited no leakage paths at similar tip bias value. Electrical resistance measurements through e-beam patterned top electrodes confirmed the resistivity mismatch between the films grown on different electrodes. The x-ray analysis attributes this difference to the twin free C r2O3 growth on V2O3 seeding.

  19. Oxide-based thin film transistors for flexible electronics

    Science.gov (United States)

    He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

    2018-01-01

    The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

  20. PREFACE: INERA Workshop: Transition Metal Oxide Thin Films-functional Layers in "Smart windows" and Water Splitting Devices. Parallel session of the 18th International School on Condensed Matter Physics

    Science.gov (United States)

    2014-11-01

    The Special issue presents the papers for the INERA Workshop entitled "Transition Metal Oxides as Functional Layers in Smart windows and Water Splitting Devices", which was held in Varna, St. Konstantin and Elena, Bulgaria, from the 4th-6th September 2014. The Workshop is organized within the context of the INERA "Research and Innovation Capacity Strengthening of ISSP-BAS in Multifunctional Nanostructures", FP7 Project REGPOT 316309 program, European project of the Institute of Solid State Physics at the Bulgarian Academy of Sciences. There were 42 participants at the workshop, 16 from Sweden, Germany, Romania and Hungary, 11 invited lecturers, and 28 young participants. There were researchers present from prestigious European laboratories which are leaders in the field of transition metal oxide thin film technologies. The event contributed to training young researchers in innovative thin film technologies, as well as thin films characterization techniques. The topics of the Workshop cover the field of technology and investigation of thin oxide films as functional layers in "Smart windows" and "Water splitting" devices. The topics are related to the application of novel technologies for the preparation of transition metal oxide films and the modification of chromogenic properties towards the improvement of electrochromic and termochromic device parameters for possible industrial deployment. The Workshop addressed the following topics: Metal oxide films-functional layers in energy efficient devices; Photocatalysts and chemical sensing; Novel thin film technologies and applications; Methods of thin films characterizations; From the 37 abstracts sent, 21 manuscripts were written and later refereed. We appreciate the comments from all the referees, and we are grateful for their valuable contributions. Guest Editors: Assoc. Prof. Dr.Tatyana Ivanova Prof. DSc Kostadinka Gesheva Prof. DSc Hassan Chamatti Assoc. Prof. Dr. Georgi Popkirov Workshop Organizing Committee Prof

  1. Processes for the production of ultra-pure metals from oxide and their cold rolling to ultra-thin foils for use as targets and as reference materials

    International Nuclear Information System (INIS)

    Clifford, S.; Guo-ji, Xu; Ingelbrecht, C.; Pomeroy, M.J.

    2002-01-01

    A wide variety of metals have been reduced from their oxides with high (>90%) yields using metallothermic reduction, hydrogen reduction or electrowinning. The high yields during metallothermic reduction were achieved by careful design of the collector and crucible orifice. Whilst each of the three techniques gave rise to reasonably (>99%) pure metals, subsequent carefully controlled vacuum distillation, using a system with especially designed crucible, baffle and collector systems, resulted in ultra-high-purity metals being produced. Using a stainless steel pack rolling technique, metals derived either directly from the reduction routes or following subsequent distillation could be rolled to foils thinner than previously reported in the literature in the majority of cases

  2. Electronic doping of transition metal oxide perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Cammarata, Antonio, E-mail: cammaant@fel.cvut.cz [Department of Control Engineering, Czech Technical University in Prague, Technicka 2, 16627 Prague 6 (Czech Republic); Rondinelli, James M. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

    2016-05-23

    CaFeO{sub 3} is a prototypical negative charge transfer oxide that undergoes electronic metal-insulator transition concomitant with a dilation and contraction of nearly rigid octahedra. Altering the charge neutrality of the bulk system destroys the electronic transition, while the structure is significantly modified at high charge content. Using density functional theory simulations, we predict an alternative avenue to modulate the structure and the electronic transition in CaFeO{sub 3}. Charge distribution can be modulated using strain-rotation coupling and thin film engineering strategies, proposing themselves as a promising avenue for fine tuning electronic features in transition metal-oxide perovskites.

  3. Optical, structural and electrical properties of Mn doped tin oxide thin ...

    Indian Academy of Sciences (India)

    Unknown

    The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with ... Tin oxide; transparent conductors; thin films. 1. Introduction. Transparent conducting oxides have ... sited sequentially on top of the metal films. The weight of metals in each deposition was ...

  4. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, R.A.; Chen, W.S.

    1985-06-11

    Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

  5. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical applications are explored. A family of zinc complexes which form perfectly polar assemblies in their crystalline state are found to organize as uniaxially oriented crystallites in vapor deposited thin films on glass substrate.

  6. Horizontal electromagnetic casting of thin metal sheets

    Science.gov (United States)

    Hull, John R.; Lari, Robert J.; Praeg, Walter F.; Turner, Larry R.

    1987-01-01

    Thin metal sheets are cast by magnetically suspending molten metal deposited within a ferromagnetic yoke and between AC conducting coils and linearly displacing the magnetically levitated liquid metal while it is being cooled to form a solid metal sheet. Magnetic flux increases as the molten metal sheet moves downward and decreases as the molten metal sheet moves upward to stabilize the sheet and maintain it in equilibrium as it is linearly displaced and solidified by cooling gases. A conducting shield is electrically coupled to the molten metal sheet by means of either metal sheet engaging rollers or brushes on the solidified metal, and by means of an electrode in the vessel containing the molten metal thereby providing a return path for the eddy currents induced in the metal sheet by the AC coil generated magnetic flux. Variation in the geometry of the conducting shield allows the magnetic flux between the metal sheet and the conducting shield to be varied and the thickness in surface quality of the metal sheet to be controlled. Side guards provide lateral containment for the molten metal sheet and stabilize and shape the magnetic field while a leader sheet having electromagnetic characteristics similar to those of the metal sheet is used to start the casting process and precedes the molten metal sheet through the magnet and forms a continuous sheet therewith. The magnet may be either U-shaped with a single racetrack coil or may be rectangular with a pair of facing bedstead coils.

  7. Horizontal electromagnetic casting of thin metal sheets

    Energy Technology Data Exchange (ETDEWEB)

    Hull, John R. (Hinsdale, IL); Lari, Robert J. (Aurora, IL); Praeg, Walter F. (Palos Park, IL); Turner, Larry R. (Naperville, IL)

    1988-01-01

    Thin metal sheets are cast by magnetically suspending molten metal deposited within a ferromagnetic yoke and between AC conducting coils and linearly displacing the magnetically levitated liquid metal while it is being cooled to form a solid metal sheet. Magnetic flux increases as the molten metal sheet moves downward and decreases as the molten metal sheet moves upward to stabilize the sheet and maintain it in equilibrium as it is linearly displaced and solidified by cooling gases. A conducting shield is electrically coupled to the molten metal sheet by means of either metal sheet engaging rollers or brushes on the solidified metal, and by means of an electrode in the vessel containing the molten metal thereby providing a return path for the eddy currents induced in the metal sheet by the AC coil generated magnetic flux. Variation in the geometry of the conducting shield allows the magnetic flux between the metal sheet and the conducting shield to be varied and the thickness in surface quality of the metal sheet to be controlled. Side guards provide lateral containment for the molten metal sheet and stabilize and shape the magnetic field while a leader sheet having electromagnetic characteristics similar to those of the metal sheet is used to start the casting process and precedes the molten metal sheet through the magnet and forms a continuous sheet therewith. The magnet may be either U-shaped with a single racetrack coil or may be rectangular with a pair of facing bedstead coils.

  8. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  9. Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, Andrew J.; Temperton, Robert H.; Handrup, Karsten; Weston, Matthew; Mayor, Louise C.; O’Shea, James N., E-mail: james.oshea@nottingham.ac.uk [School of Physics and Astronomy and Nottingham Nanotechnology and Nanoscience Centre (NNNC), University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-06-21

    The interaction of the dye molecule N3 (cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4′-dicarbo-xylato) -ruthenium(II)) with the ultra-thin oxide layer on a AlNi(110) substrate, has been studied using synchrotron radiation based photoelectron spectroscopy, resonant photoemission spectroscopy, and near edge X-ray absorption fine structure spectroscopy. Calibrated X-ray absorption and valence band spectra of the monolayer and multilayer coverages reveal that charge transfer is possible from the molecule to the AlNi(110) substrate via tunnelling through the ultra-thin oxide layer and into the conduction band edge of the substrate. This charge transfer mechanism is possible from the LUMO+2 and 3 in the excited state but not from the LUMO, therefore enabling core-hole clock analysis, which gives an upper limit of 6.0 ± 2.5 fs for the transfer time. This indicates that ultra-thin oxide layers are a viable material for use in dye-sensitized solar cells, which may lead to reduced recombination effects and improved efficiencies of future devices.

  10. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  11. Thin Metallic Films from Solvated Metal Atoms.

    Science.gov (United States)

    1987-07-14

    research has developed over the past two decades that deals with the generation of atoms of metals (by metal evaporation, and the interaction of these...Departamento de Quimica , Universidad de Concepcion, Cassilla 3-:, c oncepcion, Chile. -I{ - ~ *~.’JS*~M 4 .~4\\ 821 19 the gold particles were negatively...flocculation were observed, as shown in table a Generally about 0.1 g In was Suspended in 100-200 nl solvent. Several approacies to characterization of

  12. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films and bulk hosts are also discussed. Keywords. Alkali metal; thin films; magnetism; density functional ...

  13. Conducting metal oxide and metal nitride nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

    2017-12-26

    Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

  14. Thin metal nanostructures: synthesis, properties and applications

    OpenAIRE

    Fan, Zhanxi; Huang, Xiao; Tan, Chaoliang; Zhang, Hua

    2014-01-01

    Two-dimensional nanomaterials, especially graphene and single- or few-layer transition metal dichalcogenide nanosheets, have attracted great research interest in recent years due to their distinctive physical, chemical and electronic properties as well as their great potentials for a broad range of applications. Recently, great efforts have also been devoted to the controlled synthesis of thin nanostructures of metals, one of the most studied traditional materials, for various applications. I...

  15. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics

    OpenAIRE

    Zeumault, Andre

    2017-01-01

    Primarily used as transparent electrodes in solar-cells, more recently, physical vapor deposited(PVD) transparent conductive oxide (TCO) materials (e.g. ZnO, In2O3 and SnO2)also serve as the active layer in thin-film transistor (TFT) technology for modern liquidcrystaldisplays. Relative to a-Si:H and organic TFTs, commercial TCO TFTs have reducedoff-state leakage and higher on-state currents. Additionally, since they are transparent, theyhave the added potential to enable fully transparent TF...

  16. Method of physical vapor deposition of metal oxides on semiconductors

    Science.gov (United States)

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  17. Nanotoxicology of Metal Oxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Amedea B. Seabra

    2015-06-01

    Full Text Available This review discusses recent advances in the synthesis, characterization and toxicity of metal oxide nanoparticles obtained mainly through biogenic (green processes. The in vitro and in vivo toxicities of these oxides are discussed including a consideration of the factors important for safe use of these nanomaterials. The toxicities of different metal oxide nanoparticles are compared. The importance of biogenic synthesized metal oxide nanoparticles has been increasing in recent years; however, more studies aimed at better characterizing the potent toxicity of these nanoparticles are still necessary for nanosafely considerations and environmental perspectives. In this context, this review aims to inspire new research in the design of green approaches to obtain metal oxide nanoparticles for biomedical and technological applications and to highlight the critical need to fully investigate the nanotoxicity of these particles.

  18. A red metallic oxide photocatalyst

    Science.gov (United States)

    Xu, Xiaoxiang; Randorn, Chamnan; Efstathiou, Paraskevi; Irvine, John T. S.

    2012-07-01

    Light absorption across the bandgap in semiconductors is exploited in many important applications such as photovoltaics, light emitting diodes and photocatalytic conversion. Metals differ from semiconductors in that there is no energy gap separating occupied and unoccupied levels; however, it is still possible to excite electrons between bands. This is evidenced by materials with metallic properties that are also strongly coloured. An important question is whether such coloured metals could be used in light harvesting or similar applications. The high conductivity of a metal would preclude sufficient electric field being available to separate photocarriers; however, the high carrier mobility in a metal might also facilitate kinetic charge separation. Here we clearly demonstrate for the first time the use of a red metallic oxide, Sr1-xNbO3 as an effective photocatalyst. The material has been used under visible light to photocatalyse the oxidation of methylene blue and both the oxidation and reduction of water assisted by appropriate sacrificial elements.

  19. All-alkoxide synthesis of strontium-containing metal oxides

    Science.gov (United States)

    Boyle, Timothy J.

    2001-01-01

    A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

  20. Metallic and Ceramic Thin Film Thermocouples for Gas Turbine Engines

    Directory of Open Access Journals (Sweden)

    Otto J. Gregory

    2013-11-01

    Full Text Available Temperatures of hot section components in today’s gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today’s engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire thermocouples.

  1. Impedance matched thin metamaterials make metals absorbing.

    Science.gov (United States)

    Mattiucci, N; Bloemer, M J; Aközbek, N; D'Aguanno, G

    2013-11-13

    Metals are generally considered good reflectors over the entire electromagnetic spectrum up to their plasma frequency. Here we demonstrate an approach to tailor their absorbing characteristics based on the effective metamaterial properties of thin, periodic metallo-dielectric multilayers by exploiting a broadband, inherently non-resonant, surface impedance matching mechanism. Based on this mechanism, we design, fabricate and test omnidirectional, thin ( 99%) over a frequency range spanning from the UV to the IR. Our approach opens new venues to design cost effective materials for many applications such as thermo-photovoltaic energy conversion devices, light harvesting for solar cells, flat panel display, infrared detectors, stray light reduction, stealth and others.

  2. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    Thin films based on two very different metal-organic systems are developed and some nonlinear optical ... capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial ... systems promising candidates for a wide range of electronic, magnetic and optical applications. However ...

  3. Local Oxidation Nanolithography on Metallic Transition Metal Dichalcogenides Surfaces

    Directory of Open Access Journals (Sweden)

    Elena Pinilla-Cienfuegos

    2016-09-01

    Full Text Available The integration of atomically-thin layers of two dimensional (2D materials in nanodevices demands for precise techniques at the nanoscale permitting their local modification, structuration or resettlement. Here, we present the use of Local Oxidation Nanolithography (LON performed with an Atomic Force Microscope (AFM for the patterning of nanometric motifs on different metallic Transition Metal Dichalcogenides (TMDCs. We show the results of a systematic study of the parameters that affect the LON process as well as the use of two different modes of lithographic operation: dynamic and static. The application of this kind of lithography in different types of TMDCs demonstrates the versatility of the LON for the creation of accurate and reproducible nanopatterns in exfoliated 2D-crystals and reveals the influence of the chemical composition and crystalline structure of the systems on the morphology of the resultant oxide motifs.

  4. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  5. Enhanced electrical transparency by ultra-thin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

    Energy Technology Data Exchange (ETDEWEB)

    Yajima, Takeaki [SLAC National Accelerator Lab., Menlo Park, CA (United States); The Univ. of Tokyo, Tokyo (Japan); Minohara, Makoto [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Bell, Christopher [SLAC National Accelerator Lab., Menlo Park, CA (United States); ; Kumigashira, Hiroshi [Stanford Univ., Stanford, CA (United States); Oshima, Masaharu [The Univ. of Tokyo, Tokyo (Japan); Hwang, Harold Y. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Hikita, Yasuyuki [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-02-05

    We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. In conclusion, this field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

  6. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  7. Memristive Properties of Thin Film Cuprous Oxide

    Science.gov (United States)

    2011-03-01

    transition metal-oxide, or semiconductor material. On a macroscopic scale, such a metal/insulator/metal (MIM) system describes a capacitor. The dielectric... semiconductor . 5 The I-V relationship is characterized first by a linear region of high resistance, followed by a region where the relationship is...oxide ( CuO ) is around 1.2eV or 1034nm [15]; no noticeable features were seen in that range. The peaks around 470nm and 330nm have also been reported

  8. METAL OXIDE NANOPARTICLES

    Energy Technology Data Exchange (ETDEWEB)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  9. Synthesis of vertically aligned metal oxide nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-03-03

    Metal oxide nanostructure and methods of making metal oxide nanostructures are provided. The metal oxide nanostructures can be 1 -dimensional nanostructures such as nanowires, nanofibers, or nanotubes. The metal oxide nanostructures can be doped or undoped metal oxides. The metal oxide nanostructures can be deposited onto a variety of substrates. The deposition can be performed without high pressures and without the need for seed catalysts on the substrate. The deposition can be performed by laser ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc oxide nanostructure can be doped with a rare earth metal such as gadolinium. The metal oxide nanostructures can be used in many devices including light-emitting diodes and solar cells.

  10. Mesoporous metal oxide graphene nanocomposite materials

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Aksay, Ilhan A.; Kou, Rong; Wang, Donghai

    2016-05-24

    A nanocomposite material formed of graphene and a mesoporous metal oxide having a demonstrated specific capacity of more than 200 F/g with particular utility when employed in supercapacitor applications. A method for making these nanocomposite materials by first forming a mixture of graphene, a surfactant, and a metal oxide precursor, precipitating the metal oxide precursor with the surfactant from the mixture to form a mesoporous metal oxide. The mesoporous metal oxide is then deposited onto a surface of the graphene.

  11. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  12. Methods for synthesizing metal oxide nanowires

    Science.gov (United States)

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  13. Online-LASIL: Laser Ablation of Solid Samples in Liquid with online-coupled ICP-OES detection for direct determination of the stoichiometry of complex metal oxide thin layers.

    Science.gov (United States)

    Bonta, Maximilian; Frank, Johannes; Taibl, Stefanie; Fleig, Jürgen; Limbeck, Andreas

    2018-02-13

    Advanced materials such as complex metal oxides are used in a wide range of applications and have further promising perspectives in the form of thin films. The exact chemical composition essentially influences the electronic properties of these materials which makes correct assessment of their composition necessary. However, due to high chemical resistance and in the case of thin films low absolute analyte amounts, this procedure is in most cases not straightforward and extremely time-demanding. Commonly applied techniques either lack in ease of use (i.e., solution-based analysis with preceding sample dissolution), or adequately accurate quantification (i.e., solid sampling techniques). An analysis approach which combines the beneficial aspects of solution-based analysis as well as direct solid sampling is Laser Ablation of a Sample in Liquid (LASIL). In this work, it is shown that the analysis of major as well as minor sample constituents is possible using a novel online-LASIL setup, allowing sample analysis without manual sample handling after placing it in an ablation chamber. Strontium titanate (STO) thin layers with different compositions were analyzed in the course of this study. Precision of the newly developed online-LASIL method is comparable to conventional wet chemical approaches. With only about 15-20 min required for the analysis per sample, time demand is significantly reduced compared to often necessary fusion procedures lasting multiple hours. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  15. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    Chemical Properties ZnO occurs  as white powder  known  as  zinc white or  as  the mineral  zincite.  Zinc  oxide   is  an  amphoteric   oxide .  It  is...AFRL-OSR-VA-TR-2015-0044 Review of Zinc Oxide Thin Films Tom Otiti COLLEGE OF COMPUTING AND INFORMATION SCIENCE MAKERERE U Final Report 12/23/2014...COVERED (From - To)      01-07-2011 to 30-06-2014 4.  TITLE AND SUBTITLE ZINC OXIDE MATERIALS FOR PHOTOVOLTAIC APPLICATIONS 5a.  CONTRACT NUMBER 5b

  16. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  17. Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys

    Science.gov (United States)

    Woodfield, Brian F.; Liu, Shengfeng; Boerio-Goates, Juliana; Liu, Qingyuan; Smith, Stacey Janel

    2012-07-03

    In preferred embodiments, metal nanoparticles, mixed-metal (alloy) nanoparticles, metal oxide nanoparticles and mixed-metal oxide nanoparticles are provided. According to embodiments, the nanoparticles may possess narrow size distributions and high purities. In certain preferred embodiments, methods of preparing metal nanoparticles, mixed-metal nanoparticles, metal oxide nanoparticles and mixed-metal nanoparticles are provided. These methods may provide tight control of particle size, size distribution, and oxidation state. Other preferred embodiments relate to a precursor material that may be used to form nanoparticles. In addition, products prepared from such nanoparticles are disclosed.

  18. Metal-insulator transition in epitaxial vanadium sesquioxide thin films

    Science.gov (United States)

    Allimi, Bamidele S.

    Of all the transition metal oxides which exhibit metal-insulator transitions (MIT), one of the most extensively studied in recent years is the vanadium sesquioxide (V2O3), both from experimental and theoretical point of view. At a transition temperature of about 160 K at an ambient pressure of 1 atm, pure V2O3 transforms from a rhombohedral paramagnetic metallic (PM) to a monoclinic antiferromagnetic insulating (AFI) phase upon cooling, with a jump in the resistivity of about seven orders of magnitude. Experimental studies have focused more on bulk V2O3 and recently there have been significant interest in thin film fabrication of this material due to potential applications as thermal sensors, current limiters, Positive Temperature Coefficient (PTC) thermistors, and optical switches. This study addresses the deposition, characterization, and properties of high-quality epitaxial V2O3 thin films grown on a-, c-Al2O3 and c-LiTaO 3 substrates by a straightforward method of pulsed laser deposition (PLD). Various characterization techniques including X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray photoemission spectroscopy were used to examine the structural, crystallographic, and surface properties, while four point probe resistivity measurements were used to examine the electrical properties of the films. V2O3 thin films of different thicknesses ranging from 10-450 nm were deposited on c-Al 2O3 and c-LiTaO3 substrates by PLD to understand also the role of epitaxial strains. Resistivity measurements showed that depending on the thicknesses of films, different electrical transitions were exhibited by the samples. While some of the samples displayed the expected metal-insulator transition typical of bulk V2O3, some showed insulating behavior only and others exhibited metallic characteristics only over the whole temperature range. For example, for films on c-LiTaO3 with increasing film thickness, first an insulator-insulator, then a

  19. Fundamentals of metal oxide catalysis

    Science.gov (United States)

    Nair, Hari

    The properties of metal oxide catalysts and hence, catalytic activity are highly dependent on the composition and structure of these oxides. This dissertation has 3 parts -- all directed towards understanding relationships between structure, composition and activity in metal oxide catalysts. The first part of this dissertation focuses on supported metal oxide catalysts of tungsten, vanadium and molybdenum. Mechanisms are proposed for ethanol oxidative dehydrogenation which is used to probe the acidity and reducibility of these oxide catalysts. These studies are then used to develop a novel method to quantify active redox sites and determine the nature of the active site on these catalysts -- our results show that the intrinsic redox turn-over frequency is independent of the nature of the metal oxide and its loading and that the actual rate obtained over an oxide is only a function of the number of removable oxygen atoms linking the metal to the support. The extension of Ultraviolet-visible Diffuse Reflectance Spectroscopy (UV-vis DRS) to the study of active oxide domains in binary oxide catalysts is demonstrated for distinguishing between interacting and non-interacting domains in binary MoO x-WOx catalysts on alumina. We show also how the rigorous analysis of pre-edge features, absorption white-line intensity and the full width at half maximum of the white-line in X-ray Absorption Spectra provide determinants for metal atom coordination and domain size in supported metal oxide catalysts. The second part of this work looks at effects of structure variations on the activity of polyoxometalate catalysts that are promising for the production of Methacrylic Acid from Isobutane. The use of these catalysts is limited by structural changes that impact their performance -- an "activation" period is required before the catalysts become active for methacrylic acid production and structural changes also lead to degradation of the catalyst, which are also seen during thermal

  20. Oxide-supported metal clusters: models for heterogeneous catalysts

    International Nuclear Information System (INIS)

    Santra, A K; Goodman, D W

    2003-01-01

    Understanding the size-dependent electronic, structural and chemical properties of metal clusters on oxide supports is an important aspect of heterogeneous catalysis. Recently model oxide-supported metal catalysts have been prepared by vapour deposition of catalytically relevant metals onto ultra-thin oxide films grown on a refractory metal substrate. Reactivity and spectroscopic/microscopic studies have shown that these ultra-thin oxide films are excellent models for the corresponding bulk oxides, yet are sufficiently electrically conductive for use with various modern surface probes including scanning tunnelling microscopy (STM). Measurements on metal clusters have revealed a metal to nonmetal transition as well as changes in the crystal and electronic structures (including lattice parameters, band width, band splitting and core-level binding energy shifts) as a function of cluster size. Size-dependent catalytic reactivity studies have been carried out for several important reactions, and time-dependent catalytic deactivation has been shown to arise from sintering of metal particles under elevated gas pressures and/or reactor temperatures. In situ STM methodologies have been developed to follow the growth and sintering kinetics on a cluster-by-cluster basis. Although several critical issues have been addressed by several groups worldwide, much more remains to be done. This article highlights some of these accomplishments and summarizes the challenges that lie ahead. (topical review)

  1. Systematic study of metal-insulator-metal diodes with a native oxide

    KAUST Repository

    Donchev, E.

    2014-10-07

    © 2014 SPIE. In this paper, a systematic analysis of native oxides within a Metal-Insulator-Metal (MIM) diode is carried out, with the goal of determining their practicality for incorporation into a nanoscale Rectenna (Rectifying Antenna). The requirement of having a sub-10nm oxide scale is met by using the native oxide, which forms on most metals exposed to an oxygen containing environment. This, therefore, provides a simplified MIM fabrication process as the complex, controlled oxide deposition step is omitted. We shall present the results of an investigation into the current-voltage characteristics of various MIM combinations that incorporate a native oxide, in order to establish whether the native oxide is of sufficient quality for good diode operation. The thin native oxide layers are formed by room temperature oxidation of the first metal layer, deposited by magnetron sputtering. This is done in-situ, within the deposition chamber before depositing the second metal electrode. Using these structures, we study the established trend where the bigger the difference in metal workfunctions, the better the rectification properties of MIM structures, and hence the selection of the second metal is key to controlling the device\\'s rectifying properties. We show how leakage current paths through the non-optimised native oxide control the net current-voltage response of the MIM devices. Furthermore, we will present the so-called diode figures of merit (asymmetry, non-linearity and responsivity) for each of the best performing structures.

  2. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  3. Thin film metallization for micro-bimetallic actuators

    Science.gov (United States)

    Gorrell, Jonathan Frank

    In this study, eleven different thin film metallization systems were evaluated for use in micro-bimetallic actuators for microelectromechanical structures. These films were evaporated or sputtered onto silicon wafers. The film stress and stress relaxation were determined by measuring changes in the wafer curvature. The phases and micro-structure of these films were evaluated with, scanning electron microscopy, transmission electron microscopy, Auger electron spectroscopy, electron probe micro-analysis, X-ray diffraction and line shape analysis, and atomic force microscopy. Bimetallic actuator may be operated to generate either force or displacement. The displacement mode is dominated by the coefficient of thermal expansion while the force mode is a function of both Young's modulus and coefficient of thermal expansion of the active layer material. In both modes the maximum displacement or force is determined by the material's yield strength. A figure of merit was developed to aid in material selection. The 5052 aluminum alloy films showed that solid solution strengthening can double the yield strength of a thin film. The T201 aluminum alloy films showed that precipitates can increase yield strength by 2.5 times. The 2090 alloy film oxidized during the first heating. Based on isothermal stress relaxation data and changes in the micro-structure of the 5052 and T201 alloy thin films, two mechanisms involving logarithmic creep have been postulated to cause stress relaxation. One mechanism is movement of dislocations in slip systems that terminate at the surface while the other is dislocations moving in slip systems that terminate at grain boundaries. Copper gold intermetallics films oxidized and plastically deformed before the order-disorder transformation occurred, but showed that ordered intermetallics have a lower stress relaxation rate than the solid solution phase. The Alsb3Ti films showed no stress relaxation at 450sp°C, plastically deformed only above 500sp

  4. Thin-film thermomechanical sensors embedded in metallic structures

    Science.gov (United States)

    Golnas, Anastasios M.

    2000-10-01

    The ability to monitor in real time the thermo-mechanical responses of tools, equipment, and structural components has been very appealing to the aerospace, automotive, drilling, and manufacturing industries. So far, the challenge has been to instrument the tools, equipment, or structural components with a number of sensors in an economical way and also protect the sensors from the environment which the tools, etc. are exposed to. In this work, a sequence of manufacturing processes that can be used to build thin-film temperature and strain sensors on internal surfaces of metallic structures is proposed and demonstrated. The use of thin-film techniques allows the parallel fabrication of sensor arrays, whereas a layered manufacturing scheme permits the creation of sensors on the internal surfaces of metallic parts and their subsequent embedding. Thin-film sensors are deposited on an aluminum oxide film, which is grown on a stainless steel substrate. The oxide is deposited by reactive sputtering. The sensors are sputter-deposited from alloy targets, shaped via micromachining and partially covered with a passivation layer of aluminum oxide. The thin-film structure is then covered by two protective electroplated layers of copper and nickel for protection during the deposition of the embedding layers. Embedding is accomplished by using a high-power infrared laser to melt an invar powder bed on top of the protective layers. Among the issues that emerged during the definition of the fabrication sequence were: the long-term stability of reactive deposition, the presence of pinholes in the dielectric layers, the optimal combination of materials and thickness of the protective layers, the bonding at the various interfaces, and the heat input and residual stresses resulting from the high-temperature embedding process. Finally, a finite element model was constructed in order to simulate the high-temperature embedding process. The heat transfer analysis performed on the model

  5. Metal oxide nanorod arrays on monolithic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Pu-Xian; Guo, Yanbing; Ren, Zheng

    2018-01-02

    A metal oxide nanorod array structure according to embodiments disclosed herein includes a monolithic substrate having a surface and multiple channels, an interface layer bonded to the surface of the substrate, and a metal oxide nanorod array coupled to the substrate surface via the interface layer. The metal oxide can include ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide. The substrate can include a glass substrate, a plastic substrate, a silicon substrate, a ceramic monolith, and a stainless steel monolith. The ceramic can include cordierite, alumina, tin oxide, and titania. The nanorod array structure can include a perovskite shell, such as a lanthanum-based transition metal oxide, or a metal oxide shell, such as ceria, zinc oxide, tin oxide, alumina, zirconia, cobalt oxide, and gallium oxide, or a coating of metal particles, such as platinum, gold, palladium, rhodium, and ruthenium, over each metal oxide nanorod. Structures can be bonded to the surface of a substrate and resist erosion if exposed to high velocity flow rates.

  6. Making A Noble-Metal-On-Metal-Oxide Catalyst

    Science.gov (United States)

    Miller, Irvin M.; Davis, Patricia P.; Upchurch, Billy T.

    1989-01-01

    Catalyst exhibits superior performance in oxidation of CO in CO2 lasers. Two-step process developed for preparing platinum- or palladium-on-tin-oxide catalyst for recombination of CO and O2, decomposition products that occur in high-voltage discharge region of closed-cycle CO2 laser. Process also applicable to other noble-metal/metal-oxide combinations.

  7. Electrical breakdown in thin oxides during bias-temperature ramps

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Riewe, Leonard Charles; Winokur, Peter S.; Sexton, Frederick W.

    2000-01-01

    Electrical breakdown in thin oxides is assessed by a new bias-temperature ramp technique. No significant effect of radiation exposure on breakdown is observed for high quality thermal and nitrided oxides, up to 20 Mrad(SiO 2 )

  8. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  9. Thin-film silicon for flexible metal-air batteries.

    Science.gov (United States)

    Garamoun, Ahmed; Schubert, Markus B; Werner, Jürgen H

    2014-12-01

    Due to its high energy density, theoretical studies propose silicon as a promising candidate material for metal-air batteries. Herein, for the first time, experimental results detail the use of n-type doped amorphous silicon and silicon carbide as fuel in Si-air batteries. Thin-film silicon is particularly interesting for flexible and rolled batteries with high specific energies. Our Si-air batteries exhibit a specific capacity of 269 Ah kg(-1) and an average cell voltage of 0.85 V at a discharge current density of 7.9 μA cm(-2) , corresponding to a specific energy of 229 Wh kg(-1) . Favorably in terms of safety, low concentrated alkaline solution serves as electrolyte. Discharging of the Si-air cells continues as long as there is silicon available for oxidation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Nanostructured transition metal oxides useful for water oxidation catalysis

    Science.gov (United States)

    Frei, Heinz M; Jiao, Feng

    2013-12-24

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  11. Method for producing metal oxide nanoparticles

    Science.gov (United States)

    Phillips, Jonathan [Santa Fe, NM; Mendoza, Daniel [Santa Fe, NM; Chen, Chun-Ku [Albuquerque, NM

    2008-04-15

    Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

  12. Nanoparticular metal oxide/anatase catalysts

    DEFF Research Database (Denmark)

    2010-01-01

    the catalyst metai oxide is co-precipitated with the carrier metal oxide, which crystallization seeds are removed by combustion in a final calcining step. The present invention also concerns processes wherein the nanoparticular metal oxide catalysts of the invention are used, such as SCR (deNOx) reactions...

  13. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  14. Process for Making a Noble Metal on Tin Oxide Catalyst

    Science.gov (United States)

    Davis, Patricia; Miller, Irvin; Upchurch, Billy

    2010-01-01

    To produce a noble metal-on-metal oxide catalyst on an inert, high-surface-area support material (that functions as a catalyst at approximately room temperature using chloride-free reagents), for use in a carbon dioxide laser, requires two steps: First, a commercially available, inert, high-surface-area support material (silica spheres) is coated with a thin layer of metal oxide, a monolayer equivalent. Very beneficial results have been obtained using nitric acid as an oxidizing agent because it leaves no residue. It is also helpful if the spheres are first deaerated by boiling in water to allow the entire surface to be coated. A metal, such as tin, is then dissolved in the oxidizing agent/support material mixture to yield, in the case of tin, metastannic acid. Although tin has proven especially beneficial for use in a closed-cycle CO2 laser, in general any metal with two valence states, such as most transition metals and antimony, may be used. The metastannic acid will be adsorbed onto the high-surface-area spheres, coating them. Any excess oxidizing agent is then evaporated, and the resulting metastannic acid-coated spheres are dried and calcined, whereby the metastannic acid becomes tin(IV) oxide. The second step is accomplished by preparing an aqueous mixture of the tin(IV) oxide-coated spheres, and a soluble, chloride-free salt of at least one catalyst metal. The catalyst metal may be selected from the group consisting of platinum, palladium, ruthenium, gold, and rhodium, or other platinum group metals. Extremely beneficial results have been obtained using chloride-free salts of platinum, palladium, or a combination thereof, such as tetraammineplatinum (II) hydroxide ([Pt(NH3)4] (OH)2), or tetraammine palladium nitrate ([Pd(NH3)4](NO3)2).

  15. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  16. KTa{sub 0.65}Nb{sub 0.35}O{sub 3} thin films epitaxially grown by pulsed laser deposition on metallic and oxide epitaxial electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Bouyasfi, A.; Mouttalie, M. [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France); Laboratoire de Compatibilite Electromagnetique, Maintenance Industrielle et Nanostructures (LCEMINAS), Faculte des Sciences et Techniques, Route d' Imouzzer B.P. 2202 Fes 30000 (Morocco); Demange, V. [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France); Gautier, B.; Grandfond, A. [Institut des Nanotechnologies de Lyon/INSA, 7 Avenue Capelle, 69621 Villeurbanne Cedex (France); Deputier, S.; Ollivier, S. [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France); Hamedi, L' H. [Laboratoire de Compatibilite Electromagnetique, Maintenance Industrielle et Nanostructures (LCEMINAS), Faculte des Sciences et Techniques, Route d' Imouzzer B.P. 2202 Fes 30000 (Morocco); Guilloux-Viry, M., E-mail: maryline.guilloux-viry@univ-rennes1.fr [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Ferroelectric KTa{sub 0.65}Nb{sub 0.35}O{sub 3} thin films grown by pulsed laser deposition. Black-Right-Pointing-Pointer KTa{sub 0.65}Nb{sub 0.35}O{sub 3} epitaxially grown on Pt and LaNiO{sub 3} epitaxial electrodes. Black-Right-Pointing-Pointer Influence of oxide vs. metal electrode on ferroelectric's structural properties. Black-Right-Pointing-Pointer AFM/TUNA mode investigation of KTa{sub 0.65}Nb{sub 0.35}O{sub 3}/Pt heterostructure. Black-Right-Pointing-Pointer Asymmetry of the conduction mechanisms (positive vs. negative applied voltage). - Abstract: Ferroelectric KTa{sub 0.65}Nb{sub 0.35}O{sub 3} (KTN) thin films were grown by pulsed laser deposition on Pt and LaNiO{sub 3} epitaxial electrodes, on (1 0 0) and (1 1 0) SrTiO{sub 3} substrates. The effect of the nature of the electrode on structural and microstructural quality of KTN films was investigated. While epitaxial KTN thin films were successfully obtained on both electrodes, two orientations compete on Pt, whatever the main orientation of Pt is (1 0 0) or (1 1 0). On LaNiO{sub 3} in contrast, pure (1 0 0) and (1 1 0) oriented KTN films were achieved with a high crystalline quality illustrated by narrow {omega}-scans ({Delta}{omega} = 0.56 Degree-Sign and {Delta}{omega} = 0.80 Degree-Sign for (1 0 0) and (1 1 0) KTN, to be compared to 0.048 Degree-Sign and 0.22 Degree-Sign for (1 0 0) and (1 1 0) LaNiO{sub 3}, respectively). Electrical measurements performed in tunneling atomic force microscopy (TUNA mode) on a KTN/Pt heterostructure showed a high asymmetry of the conduction mechanisms when a positive or a negative bias is applied on the sample. In particular leakage currents appear even at very low positive applied voltage. TUNA imaging operated at a moderate negative applied voltage of -3 V shows that some areas corresponding to grain boundaries seem to be more leaky than others.

  17. Aerobic Oxidations of Light Alkanes over Solid Metal Oxide Catalysts.

    Science.gov (United States)

    Grant, Joseph T; Venegas, Juan M; McDermott, William P; Hermans, Ive

    2017-11-07

    Heterogeneous metal oxide catalysts are widely studied for the aerobic oxidations of C 1 -C 4 alkanes to form olefins and oxygenates. In this review, we outline the properties of supported metal oxides, mixed-metal oxides, and zeolites and detail their most common applications as catalysts for partial oxidations of light alkanes. By doing this we establish similarities between different classes of metal oxides and identify common themes in reaction mechanisms and research strategies for catalyst improvement. For example, almost all partial alkane oxidations, regardless of the metal oxide, follow Mars-van Krevelen reaction kinetics, which utilize lattice oxygen atoms to reoxidize the reduced metal centers while the gaseous O 2 reactant replenishes these lattice oxygen vacancies. Many of the most-promising metal oxide catalysts include V 5+ surface species as a necessary constituent to convert the alkane. Transformations involving sequential oxidation steps (i.e., propane to acrylic acid) require specific reaction sites for each oxidation step and benefit from site isolation provided by spectator species. These themes, and others, are discussed in the text.

  18. Metal Oxide Solubility and Molten Salt Corrosion.

    Science.gov (United States)

    1982-03-29

    soluble oxides that relations like eq. (3) are significant. The oxides of several metal oxides have been found to be amphoteric , i.e., their solution...METAL OXIDE SOLUBILITY AND MOLTEN SALT CORROSION.(U) MAR 82 K H STERN UNCLASSI E DL R L-4772NL EL .2. MICROCOPY RESOLUTION TEST CHART NATIONAL BURALU...METAL OXIDE SOLUBILITY AND MOLTEN SALT Interim report on a continuing CORROSION NRL problem. S. PERFORMING a4. REPORT NUMlER 7. AuTtwORr) S. CONTRACT OR

  19. Reduction of Metal Oxide to Metal using Ionic Liquids

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Ramana Reddy

    2012-04-12

    A novel pathway for the high efficiency production of metal from metal oxide means of electrolysis in ionic liquids at low temperature was investigated. The main emphasis was to eliminate the use of carbon and high temperature application in the reduction of metal oxides to metals. The emphasis of this research was to produce metals such as Zn, and Pb that are normally produced by the application of very high temperatures. The reduction of zinc oxide to zinc and lead oxide to lead were investigated. This study involved three steps in accomplishing the final goal of reduction of metal oxide to metal using ionic liquids: 1) Dissolution of metal oxide in an ionic liquid, 2) Determination of reduction potential using cyclic voltammetry (CV) and 3) Reduction of the dissolved metal oxide. Ionic liquids provide additional advantage by offering a wide potential range for the deposition. In each and every step of the process, more than one process variable has been examined. Experimental results for electrochemical extraction of Zn from ZnO and Pb from PbO using eutectic mixtures of Urea ((NH2)2CO) and Choline chloride (HOC2H4N(CH3)3+Cl-) or (ChCl) in a molar ratio 2:1, varying voltage and temperatures were carried out. Fourier Transform Infra-Red (FTIR) spectroscopy studies of ionic liquids with and without metal oxide additions were conducted. FTIR and induction coupled plasma spectroscopy (ICPS) was used in the characterization of the metal oxide dissolved ionic liquid. Electrochemical experiments were conducted using EG&G potentiostat/galvanostat with three electrode cell systems. Cyclic voltammetry was used in the determination of reduction potentials for the deposition of metals. Chronoamperometric experiments were carried out in the potential range of -0.6V to -1.9V for lead and -1.4V to -1.9V for zinc. The deposits were characterized using XRD and SEM-EDS for phase, morphological and elemental analysis. The results showed that pure metal was deposited on the cathode

  20. Soft chemistry routes to transparent metal oxide thin films. The case of sol–gel synthesis and structural characterization of Ta2O5 thin films from tantalum chloromethoxide

    International Nuclear Information System (INIS)

    Epifani, Mauro; Zamani, Reza; Arbiol, Jordi; Fabrega, Cristian; Andreu, Teresa; Pace, Giovanni Battista; Siciliano, Pietro; Morante, Joan R.

    2014-01-01

    Ta 2 O 5 thin films were prepared by spin-coating methanol solutions of Ta chloromethoxide. It was prepared by reacting TaCl 5 with methanol, followed by water addition (H 2 O: Ta molar ratio was 16). Thin films were deposited by spin-coating onto SiO 2 /Si substrates, followed by drying at 90 °C and heat-treatment up to 700 °C. The films were characterized by X-ray diffraction, transmission electron microscopy and field emission scanning electron microscopy. Crystallization was obtained only after heating at 700 °C, in the Ta 2 O 5 orthorhombic phase. The resulting films had a thickness of 100 nm. Their structure was constituted by porous crystals with size up to 50 nm, while the pores had a size of about 10 nm. The results demonstrated that TaCl 5 is very convenient precursor for the wet chemical synthesis of Ta 2 O 5 thin films. - Highlights: • Development of convenient solution synthesis of Ta 2 O 5 thin films; • The precursor chemistry was established and related to the synthesis process; • Uniform films crystallized in the most stable orthorombic Ta 2 O 5 phase;

  1. Wet-Chemical Synthesis of 3D Stacked Thin Film Metal-Oxides for All-Solid-State Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Evert Jonathan van den Ham

    2017-09-01

    Full Text Available By ultrasonic spray deposition of precursors, conformal deposition on 3D surfaces of tungsten oxide (WO3 negative electrode and amorphous lithium lanthanum titanium oxide (LLT solid-electrolyte has been achieved as well as an all-solid-state half-cell. Electrochemical activity was achieved of the WO3 layers, annealed at temperatures of 500 °C. Galvanostatic measurements show a volumetric capacity (415 mAh·cm−3 of the deposited electrode material. In addition, electrochemical activity was shown for half-cells, created by coating WO3 with LLT as the solid-state electrolyte. The electron blocking properties of the LLT solid-electrolyte was shown by ferrocene reduction. 3D depositions were done on various micro-sized Si template structures, showing fully covering coatings of both WO3 and LLT. Finally, the thermal budget required for WO3 layer deposition was minimized, which enabled attaining active WO3 on 3D TiN/Si micro-cylinders. A 2.6-fold capacity increase for the 3D-structured WO3 was shown, with the same current density per coated area.

  2. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  3. Pulsed laser deposition: metal versus oxide ablation

    NARCIS (Netherlands)

    Doeswijk, L.M.; Rijnders, Augustinus J.H.M.; Blank, David H.A.

    2004-01-01

    We present experimental results of pulsed laser interaction with metal (Ni, Fe, Nb) and oxide (TiO2, SrTiO3, BaTiO3) targets. The influence of the laser fluence and the number of laser pulses on the resulting target morphology are discussed. Although different responses for metal and oxide targets

  4. Nanocomposite of graphene and metal oxide materials

    Science.gov (United States)

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2012-09-04

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

  5. Nanocomposite of graphene and metal oxide materials

    Science.gov (United States)

    Liu, Jun; Aksay, Ilhan A.; Choi, Daiwon; Wang, Donghai; Yang, Zhenguo

    2013-10-15

    Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10 C.

  6. FEM Analysis on Electromagnetic Processing of Thin Metal Sheets

    Directory of Open Access Journals (Sweden)

    PASCA Sorin

    2014-10-01

    Full Text Available Based on finite element analysis, this paper investigates a possible new technology for electromagnetic processing of thin metal sheets, in order to improve the productivity, especially on automated manufacturing lines. This technology consists of induction heating process followed by magnetoforming process, both applied to metal sheet, using the same tool coil for both processes.

  7. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

    Directory of Open Access Journals (Sweden)

    Andrei Ionut Mardare

    2014-01-01

    Full Text Available A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven.

  8. Sputter deposition of metallic thin film and directpatterning

    Energy Technology Data Exchange (ETDEWEB)

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  9. Methods of producing adsorption media including a metal oxide

    Science.gov (United States)

    Mann, Nicholas R; Tranter, Troy J

    2014-03-04

    Methods of producing a metal oxide are disclosed. The method comprises dissolving a metal salt in a reaction solvent to form a metal salt/reaction solvent solution. The metal salt is converted to a metal oxide and a caustic solution is added to the metal oxide/reaction solvent solution to adjust the pH of the metal oxide/reaction solvent solution to less than approximately 7.0. The metal oxide is precipitated and recovered. A method of producing adsorption media including the metal oxide is also disclosed, as is a precursor of an active component including particles of a metal oxide.

  10. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  11. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  12. Metal ion binding to iron oxides

    NARCIS (Netherlands)

    Hiemstra, T.; Riemsdijk, van W.H.; Benedetti, M.F.; Ponthieu, M.

    2006-01-01

    The biogeochemistry of trace elements (TE) is largely dependent upon their interaction with heterogeneous ligands including metal oxides and hydrous oxides of iron. The modeling of TE interactions with iron oxides has been pursued using a variety of chemical models. The objective of this work is to

  13. Subwavelength grating-mirror VCSEL with a thin oxide gap

    OpenAIRE

    Chung, Il-Sug; Mørk, Jesper; Gilet, Philippe; Chelnokov, Alexei

    2008-01-01

    A new vertical-cavity surface-emitting laser (VCSEL) structure based on a subwavelength grating mirror and a thin oxide gap is suggested and numerically investigated. The structure is shown to exhibit similar threshold gain, suppression of higher order transverse modes, and polarization stability as a grating-mirror VCSEL reported in the literature based on a thick air gap. The thin oxide gap structure has a number of advantages including easier fabrication, better mechanical stability, and v...

  14. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Abstract. For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8⋅5 mbar for 18 h. Argon and ...

  15. Fluorine compounds for doping conductive oxide thin films

    Science.gov (United States)

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  16. Active Oxygen Generator by Silent Discharge and Oxidation Power in Formation of Oxide Thin Films

    Science.gov (United States)

    Tanaka, Masaaki; Kawagoe, Yasuyuki; Tsukazaki, Hisashi; Yamanishi, Kenichiro

    We have studied the low pressure silent discharge type active oxygen generator in terms of the application to the formation of oxide thin films. In this paper the oxidation power of active oxygen in the oxide thin film formation is compared with that of oxygen and ozone by forming silicon oxide thin films. It was confirmed that the oxidation power is in turn of active oxygen > ozone > oxygen from the experimental result of the number of x in SiOx thin film. Furthermore we applied active oxygen to the formation of the thin film high temperature super conductor and active oxygen was found to be effective to the formation of the thin film with high performance.

  17. PREPARATION OF METAL OXIDE POWDERS FROM METAL LOADED VERSATIC ACID

    OpenAIRE

    KAKIHATA, Takayuki; USAMI, Kensuke; YAMAMOTO, Hideki; SHIBATA, Junji

    1998-01-01

    A production process for metal oxide powders was developed using a solvent extraction method. Versatic Acid 10 and D2EHPA solutions containing copper, zinc and nickel were used for a precipitation-stripping process, where oxalic acid was added to the solution as a precipitation reagent.Copper, zinc and nickel oxalates were easily formed in an aqueous phase, and 99.9% of precipitation was obtained for each metal during this process. These metal oxalates were easily converted to metal oxides by...

  18. A comparison of surface properties of metallic thin film photocathodes

    CERN Document Server

    Mistry, Sonal; Valizadeh, Reza; Jones, L.B; Middleman, Keith; Hannah, Adrian; Militsyn, B.L; Noakes, Tim

    2017-01-01

    In this work the preparation of metal photocathodes by physical vapour deposition magnetron sputtering has been employed to deposit metallic thin films onto Cu, Mo and Si substrates. The use of metallic cathodes offers several advantages: (i) metal photocathodes present a fast response time and a relative insensitivity to the vacuum environment (ii) metallic thin films when prepared and transferred in vacuum can offer smoother and cleaner emitting surfaces. The photocathodes developed here will ultimately be used in S-band Normal Conducting RF (NCRF) guns such as that used in VELA (Versatile Electron Linear Accelerator) and the proposed CLARA (Compact Linear Accelerator for Research and Applications) Free Electron Laser test facility. The samples grown on Si substrates were used to investigate the morphology and thickness of the film. The samples grown onto Cu and Mo substrates were analysed and tested as photocathodes in a surface characterisation chamber, where X-Ray Photoelectron spectroscopy (XPS) was emp...

  19. Mesoporous metal oxides and processes for preparation thereof

    Energy Technology Data Exchange (ETDEWEB)

    Suib, Steven L.; Poyraz, Altug Suleyman

    2018-03-06

    A process for preparing a mesoporous metal oxide, i.e., transition metal oxide. Lanthanide metal oxide, a post-transition metal oxide and metalloid oxide. The process comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to form the mesoporous metal oxide. A mesoporous metal oxide prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous metal oxides. The method comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous metal oxides. Mesoporous metal oxides and a method of tuning structural properties of mesoporous metal oxides.

  20. One dimensional metallic edges in atomically thin WSe2 induced by air exposure

    Science.gov (United States)

    Addou, Rafik; Smyth, Christopher M.; Noh, Ji-Young; Lin, Yu-Chuan; Pan, Yi; Eichfeld, Sarah M.; Fölsch, Stefan; Robinson, Joshua A.; Cho, Kyeongjae; Feenstra, Randall M.; Wallace, Robert M.

    2018-04-01

    Transition metal dichalcogenides are a unique class of layered two-dimensional (2D) crystals with extensive promising applications. Tuning the electronic properties of low-dimensional materials is vital for engineering new functionalities. Surface oxidation is of particular interest because it is a relatively simple method of functionalization. By means of scanning probe microscopy and x-ray photoelectron spectroscopy, we report the observation of metallic edges in atomically thin WSe2 monolayers grown by chemical vapor deposition on epitaxial graphene. Scanning tunneling microscopy shows structural details of WSe2 edges and scanning tunneling spectroscopy reveals the metallic nature of the oxidized edges. Photoemission demonstrates that the formation of metallic sub-stoichiometric tungsten oxide (WO2.7) is responsible for the high conductivity measured along the edges. Ab initio calculations validate the susceptibility of WSe2 nanoribbon edges to oxidation. The zigzag terminated edge exhibits metallic behavior prior the air-exposure and remains metallic after oxidation. Comprehending and exploiting this property opens a new opportunity for application in advanced electronic devices.

  1. Thermomagnetic marking of rare-earth-transition-metal thin films

    Science.gov (United States)

    Bartholomeusz, Brian Josef

    1989-01-01

    Analytical derivation of temperature profiles in laser-irradiated thin-film structures is hindered by the nature of the heat source terms and by the geometrical complexity that often exists. This study utilizes a combined Laplace-transform-Fourier-integral method to obtain approximate solutions for a number of simple cases. The results are used to study the thermomagnetic marking process in rare-earth-transition-metal (RE-TM) thin films, and the predictions are compared with experimental observations.

  2. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic

  3. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  4. Study of zinc oxide thin film characteristics

    OpenAIRE

    Johari Shazlina; Muhammad Nazalea Yazmin; Zakaria Mohd Rosydi

    2017-01-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influe...

  5. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p...

  6. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...

  7. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  8. Catalytic dehydrogenation of light alkanes on metals and metal oxides

    NARCIS (Netherlands)

    Sattler, Jesper J H B|info:eu-repo/dai/nl/328235601; Ruiz-Martinez, Javier|info:eu-repo/dai/nl/341386405; Santillan-Jimenez, Eduardo|info:eu-repo/dai/nl/323171958; Weckhuysen, Bert M.|info:eu-repo/dai/nl/285484397

    2014-01-01

    A study is conducted to demonstrate catalytic dehydrogenation of light alkanes on metals and metal oxides. The study provides a complete overview of the materials used to catalyze this reaction, as dehydrogenation for the production of light olefins has become extremely relevant. Relevant factors,

  9. Mesoporous Transition Metal Oxides for Supercapacitors

    Directory of Open Access Journals (Sweden)

    Yan Wang

    2015-10-01

    Full Text Available Recently, transition metal oxides, such as ruthenium oxide (RuO2, manganese dioxide (MnO2, nickel oxides (NiO and cobalt oxide (Co3O4, have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot nanomaterials in the field of supercapacitors owing to their large specific surface areas and suitable pore size distributions. The high specific capacities of these mesoporous metal oxides are resulted from the effective contacts between electrode materials and electrolytes as well as fast transportation of ions and electrons in the bulk of electrode and at the interface of electrode and electrolyte. During the past decade, many achievements on mesoporous transition metal oxides have been made. In this mini-review, we select several typical nanomaterials, such as RuO2, MnO2, NiO, Co3O4 and nickel cobaltite (NiCo2O4, and briefly summarize the recent research progress of these mesoporous transition metal oxides-based electrodes in the field of supercapacitors.

  10. Magnetron sputtered gadolinia-doped ceria diffusion barriers for metal-supported solid oxide fuel cells

    DEFF Research Database (Denmark)

    Sønderby, Steffen; Klemensø, Trine; Christensen, Bjarke H.

    2014-01-01

    Gadolinia-doped ceria (GDC) thin films are deposited by reactive magnetron sputtering in an industrial-scale setup and implemented as barrier layers between the cathode and electrolyte in metal-based solid oxide fuel cells consisting of a metal support, an electrolyte of ZrO2 co-doped with Sc2O3 ...

  11. Metal oxide nanostructures as gas sensing devices

    CERN Document Server

    Eranna, G

    2016-01-01

    Metal Oxide Nanostructures as Gas Sensing Devices explores the development of an integrated micro gas sensor that is based on advanced metal oxide nanostructures and is compatible with modern semiconductor fabrication technology. This sensor can then be used to create a compact, low-power, handheld device for analyzing air ambience. The book first covers current gas sensing tools and discusses the necessity for miniaturized sensors. It then focuses on the materials, devices, and techniques used for gas sensing applications, such as resistance and capacitance variations. The author addresses the issues of sensitivity, concentration, and temperature dependency as well as the response and recovery times crucial for sensors. He also presents techniques for synthesizing different metal oxides, particularly those with nanodimensional structures. The text goes on to highlight the gas sensing properties of many nanostructured metal oxides, from aluminum and cerium to iron and titanium to zinc and zirconium. The final...

  12. Electrochemical analysis of metal oxides

    Czech Academy of Sciences Publication Activity Database

    Grygar, Tomáš; Bezdička, Petr; Hradil, David; Pikna, L.

    90-91, - (2003), s. 45-50 ISSN 1012-0394 Institutional research plan: CEZ:AV0Z4032918 Keywords : powder electroanalysis * Fe oxides * Mn oxides Subject RIV: CA - Inorganic Chemistry Impact factor: 0.687, year: 2003

  13. ANTIREFLECTION MULTILAYER COATINGS WITH THIN METAL LAYERS

    Directory of Open Access Journals (Sweden)

    L. A. Gubanova

    2016-03-01

    Full Text Available The design of anti-reflective coatings for metal surfaces of Al, Ti, N,i Cr is proposed. The coatings have the form of alternating layers of dielectric/metal/dielectric with the number of cells up to15. The method of calculation of such coatings is proposed. We have calculated the coatings of the type [HfO2/Cr/HfO2]15, [ZrO2/Ti/Al2O3]15, [ZrO2/Cr/ZrO2]15. It is shown that the proposed interference coatings provide reduction of the residual reflectance of the metal several times (from 3.5 to 6.0 in a wide spectral range (300-1000 nm. The proposed coatings can be recommended as anti-reflective coatings for energy saving solar systems and batteries, and photovoltaic cells.

  14. Electromagnetic augmentation for casting of thin metal sheets

    Energy Technology Data Exchange (ETDEWEB)

    Hull, John R. (Hinsdale, IL)

    1989-01-01

    Thin metal sheets are cast by magnetically levitating molten metal deposited in a mold within a ferromagnetic yoke and between AC conducting coils and linearly displacing the magnetically levitated liquid metal while it is being cooled by the water-cooled walls of the mold to form a solid metal sheet. A conducting shield is electrically coupled to the molten metal sheet to provide a return path for eddy currents induced in the metal sheet by the current in the AC conducting coils. In another embodiment, a DC conducting coil is coupled to the metal sheet for providing a direct current therein which interacts with the magnetic field to levitate the moving metal sheet. Levitation of the metal sheet in both molten and solid forms reduces its contact pressure with the mold walls while maintaining sufficient engagement therebetween to permit efficient conductive cooling by the mold through which a coolant fluid may be circulated. The magnetic fields associated with the currents in the aforementioned coils levitate the molten metal sheet while the mold provides for its lateral and vertical confinement. A leader sheet having electromagnetic characteristics similar to those of the molten metal sheet is used to start the casing process and precedes the molten metal sheet through the yoke/coil arrangement and mold and forms a continuous sheet therewith. The yoke/coil arrangement may be either U-shaped with a single racetrack coil or may be rectangular with a pair of spaced, facing bedstead coils.

  15. Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

    KAUST Repository

    Haque, Mohammed

    2017-07-10

    Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide-bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo-generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.

  16. Graphene composites containing chemically bonded metal oxides

    Indian Academy of Sciences (India)

    Abstract. Composites of graphene involving chemically bonded nano films of metal oxides have been prepared by reacting graphene containing surface oxygen functionalities with metal halide vapours followed by exposure to water vapour. The composites have been characterized by electron microscopy, atomic force ...

  17. Graphene composites containing chemically bonded metal oxides

    Indian Academy of Sciences (India)

    Composites of graphene involving chemically bonded nano films of metal oxides have been prepared by reacting graphene containing surface oxygen functionalities with metal halide vapours followed by exposure to water vapour. The composites have been characterized by electron microscopy, atomic force microscopy ...

  18. Hexagonal metal modifications and thin film ferromagnetism

    NARCIS (Netherlands)

    Hueger, E.; Wormeester, Herbert; Bauer, E.

    1999-01-01

    Epitaxial strain-stabilized hexagonal modifications can occur in many metal films grown on (100) surfaces of cubic crystals and can have a strong influence on their magnetic properties. The necessary conditions for the formation of hcp crystals, identification criteria, examples and implications for

  19. Oxidation behaviour of metallic glass foams

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, B.R. [Department of Materials Science and Engineering, 434 Dougherty Hall, University of Tennessee, Knoxville, TN 37996-2200 (United States)], E-mail: bbarnard@utk.edu; Liaw, P.K. [Department of Materials Science and Engineering, 434 Dougherty Hall, University of Tennessee, Knoxville, TN 37996-2200 (United States); Demetriou, M.D.; Johnson, W.L. [Department of Materials Science, Keck Laboratory, California Institute of Technology, Pasadena, CA 91125 (United States)

    2008-08-15

    In this study, the effects of porosity on the oxidation behaviour of bulk-metallic glasses were investigated. Porous Pd- and Fe-based bulk-metallic glass (BMG) foams and Metglas ribbons were studied. Oxidizing experiments were conducted at 70 deg. C, and around 80 deg. C below glass-transition temperatures, (T{sub g}s). Scanning-electron microscopy/energy-dispersive spectroscopy (SEM/EDS) studies revealed little evidence of oxidation at 70 deg. C. Specimens exhibited greater oxidation at T{sub g} - 80 deg. C. Oxides were copper-based for Pd-based foams, Fe-, Cr-, and Mo-based for Fe-based foams, and Co-based with borosilicates likely for the Metglas. Pd-based foams demonstrated the best oxidation resistance, followed by Metglas ribbons, followed by Fe-based foams.

  20. Thin metal films in resistivity-based chemical sensing

    Czech Academy of Sciences Publication Activity Database

    Podešva, Pavel; Foret, František

    2013-01-01

    Roč. 9, č. 4 (2013), s. 642-652 ISSN 1573-4110 R&D Projects: GA ČR(CZ) GAP301/11/2055 Institutional support: RVO:68081715 Keywords : voltohmmetric sensing * chemiresistor * thin metal film * gas sensing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 1.194, year: 2013

  1. Preparation of self-supporting thin metal target films

    International Nuclear Information System (INIS)

    Wang Xiuying; Ge Suxian; Yin Jianhua; Yin Xu; Jin Genming

    1989-01-01

    The preparation method and equipment for thin metal self-supporting target without oil contamination are described. The influence of target films contaminated by oil vapor on accuracy of nuclear-physics experimental data are also discussed. The analytical results on carbon content in the prepared films of three elements show that the equipment is very effective for eliminating contamination

  2. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... characterized. Spectral responses are measured and in two types of measured GaAs solar cells (with Au and Ag nanoparticles) there was no clear efficiency enhancement in the NIR spectral range. In the case of Au nanoparticles it could be explained in similar way to the absorption data: the effect being broad...... cells spectral response to longer wavelengths, through possibly cheap and simple technologies: EBL can be substituted by colloidal solutions implementation and electroless plating is not expensive and results to be effective within a broad set of parameters (size, shape, density). Another application...

  3. Thin films of metal-organic compounds and metal nanoparticle ...

    Indian Academy of Sciences (India)

    matrix. The methodology can be used to produce free-standing films. Optical limiting capability of the nanoparticle-embedded polymer film is demonstrated. Keywords. Polar crystal; uniaxial orientational order; thin film; second harmonic gen- eration; silver nanoparticle; polyvinyl alcohol; free-standing film; optical limiter.

  4. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

    Science.gov (United States)

    Woods, Keenan N; Chiang, Tsung-Han; Plassmeyer, Paul N; Kast, Matthew G; Lygo, Alexander C; Grealish, Aidan K; Boettcher, Shannon W; Page, Catherine J

    2017-03-29

    Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal-insulator-semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (La 2 Zr 2 O 7 , LZO) dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with subnanometer roughness. Dielectric constants of 12.2-16.4 and loss tangents MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents <10 -7 A cm -2 at 4 MV cm -1 were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities makes these LZO dielectrics promising candidates for thin-film transistor devices.

  5. Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

    2017-01-01

    The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

  6. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  7. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  8. PLUTONIUM METAL: OXIDATION CONSIDERATIONS AND APPROACH

    Energy Technology Data Exchange (ETDEWEB)

    Estochen, E.

    2013-03-20

    Plutonium is arguably the most unique of all metals when considered in the combined context of metallurgical, chemical, and nuclear behavior. Much of the research in understanding behavior and characteristics of plutonium materials has its genesis in work associated with nuclear weapons systems. However, with the advent of applications in fuel materials, the focus in plutonium science has been more towards nuclear fuel applications, as well as long term storage and disposition. The focus of discussion included herein is related to preparing plutonium materials to meet goals consistent with non-proliferation. More specifically, the emphasis is on the treatment of legacy plutonium, in primarily metallic form, and safe handling, packaging, and transport to meet non-proliferation goals of safe/secure storage. Elevated temperature oxidation of plutonium metal is the treatment of choice, due to extensive experiential data related to the method, as the oxide form of plutonium is one of only a few compounds that is relatively simple to produce, and stable over a large temperature range. Despite the simplicity of the steps required to oxidize plutonium metal, it is important to understand the behavior of plutonium to ensure that oxidation is conducted in a safe and effective manner. It is important to understand the effect of changes in environmental variables on the oxidation characteristics of plutonium. The primary purpose of this report is to present a brief summary of information related to plutonium metal attributes, behavior, methods for conversion to oxide, and the ancillary considerations related to processing and facility safety. The information provided is based on data available in the public domain and from experience in oxidation of such materials at various facilities in the United States. The report is provided as a general reference for implementation of a simple and safe plutonium metal oxidation technique.

  9. Method of making spherical metallic oxide and metallic carbide particles

    International Nuclear Information System (INIS)

    Zimmer, E.

    1976-01-01

    A method is described for making spherical metallic oxide and metallic carbide particles, especially particles consisting of fuel or breeder material such as oxide or carbide compounds of uranium, plutonium, thorium and the like with a diameter of from 0.1 to 1.5 millimeters, according to which an aqueous solution of a metallic nitrate or a metallic chloride or a mixture of metallic nitrates or metallic chlorides in which the metallic ions and anions are in a stoichiometric ratio to each other, is added dropwise to an organic phase. The method is characterized primarily in that the drops formed from the aqueous solution after congealing are washed in an aqueous solution containing ammonia and from 0.001 percent to 0.1 percent of a non-ionic surface active agent, especially an ethylene oxide condensate, enveloping the particles and preventing them from clumping during the following drying step. The hardened particles are dried in an air current having a temperature of from 150 to 300 0 C and an atmospheric moisture content corresponding to the degree of saturation of the air at a temperature of about from 20 to 50 0 C, and sintered at about 1300 0 C

  10. Subwavelength grating-mirror VCSEL with a thin oxide gap

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper; Gilet, Philippe

    2008-01-01

    A new vertical-cavity surface-emitting laser (VCSEL) structure based on a subwavelength grating mirror and a thin oxide gap is suggested and numerically investigated. The structure is shown to exhibit similar threshold gain, suppression of higher order transverse modes, and polarization stability...... as a grating-mirror VCSEL reported in the literature based on a thick air gap. The thin oxide gap structure has a number of advantages including easier fabrication, better mechanical stability, and very strong single-mode properties....

  11. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  12. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  13. Study of zinc oxide thin film characteristics

    Directory of Open Access Journals (Sweden)

    Johari Shazlina

    2017-01-01

    Full Text Available This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  14. Metal oxide multilayer hard mask system for 3D nanofabrication

    Science.gov (United States)

    Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

    2018-02-01

    We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

  15. Metal oxide films on glass and steel substrates

    CERN Document Server

    Sohi, A M

    1987-01-01

    in the pH8 electrolyte supports the view that the rate limiting reduction reaction is possibly oxygen (or water) reduction although some contribution from an organic 'impurity' cannot be ruled out. Coatings of Fe sub 3 O sub 4 on mild steel have been prepared by CVD using pneumatic spraying techniques and the corrosion behaviour of coated electrodes in organic-phosphate electrolyte (pH8) has been examined. A variety of thin (10-1000nm) metal oxide films have been deposited on flat glass substrates by the pyrolysis of an aerosol of metal acetylacetonates in a suitable carrier. The optical characteristics and thickness of the films have been measured and particular interest has centered on the use of a novel pin on disc apparatus to measure the physical durability of such thin films. Characteristic friction/penetration force traces have been established for 1st Series transition metal oxide films and some ranking in terms of 'hardness' established. The use of SnO sub 2 - coated glass for electrodes in a light m...

  16. Oxidation-Mediated Fingering in Liquid Metals

    Science.gov (United States)

    Eaker, Collin B.; Hight, David C.; O'Regan, John D.; Dickey, Michael D.; Daniels, Karen E.

    2017-10-01

    We identify and characterize a new class of fingering instabilities in liquid metals; these instabilities are unexpected due to the large interfacial tension of metals. Electrochemical oxidation lowers the effective interfacial tension of a gallium-based liquid metal alloy to values approaching zero, thereby inducing drastic shape changes, including the formation of fractals. The measured fractal dimension (D =1.3 ±0.05 ) places the instability in a different universality class than other fingering instabilities. By characterizing changes in morphology and dynamics as a function of droplet volume and applied electric potential, we identify the three main forces involved in this process: interfacial tension, gravity, and oxidative stress. Importantly, we find that electrochemical oxidation can generate compressive interfacial forces that oppose the tensile forces at a liquid interface. The surface oxide layer ultimately provides a physical and electrochemical barrier that halts the instabilities at larger positive potentials. Controlling the competition between interfacial tension and oxidative (compressive) stresses at the interface is important for the development of reconfigurable electronic, electromagnetic, and optical devices that take advantage of the metallic properties of liquid metals.

  17. Conductance of perovskite oxide thin films and interfaces

    NARCIS (Netherlands)

    Mubeen Dildar, Ishrat

    2013-01-01

    This thesis deals with the properties of doped perovskite manganites in the form of thin films, and with interfaces between insulating perovskites. The first question we investigate has to do with the strong reduction of the metal-insulator (MI) transition temperature when the films are strained.In

  18. Nanopowder Metal Oxide for Photoluminescent Gas Sensing

    Science.gov (United States)

    Zhyrovetsky, V. M.; Popovych, D. I.; Savka, S. S.; Serednytski, A. S.

    2017-02-01

    Gas sensing properties of metal oxide nanopowders (ZnO, TiO2, WO3, SnO2) with average diameters of 40-60 nm were analyzed by room-temperature photoluminescence spectroscopy. The influence of gas environment (O2, N2, H2, CO, CO2) on the emission intensity was investigated for metal oxide nanopowders with surface doped by impurities (Pt, Ag, Au, Sn, Ni or Cu). Established physicochemical regularities of modification of surface electronic states of initial and doped nanopowders during gas adsorption. The nature of metal oxide nanopowder gas-sensing properties (adsorption capacity, sensitivity, selectivity) has been established and the design and optimal materials for the construction of the multi-component sensing matrix have been selected.

  19. Nanopowder Metal Oxide for Photoluminescent Gas Sensing

    Directory of Open Access Journals (Sweden)

    V. M. Zhyrovetsky

    2017-02-01

    Full Text Available Abstract Gas sensing properties of metal oxide nanopowders (ZnO, TiO2, WO3, SnO2 with average diameters of 40–60 nm were analyzed by room-temperature photoluminescence spectroscopy. The influence of gas environment (O2, N2, H2, CO, CO2 on the emission intensity was investigated for metal oxide nanopowders with surface doped by impurities (Pt, Ag, Au, Sn, Ni or Cu. Established physicochemical regularities of modification of surface electronic states of initial and doped nanopowders during gas adsorption. The nature of metal oxide nanopowder gas-sensing properties (adsorption capacity, sensitivity, selectivity has been established and the design and optimal materials for the construction of the multi-component sensing matrix have been selected.

  20. Surface Embedded Metal Oxide Sensors (SEMOS)

    DEFF Research Database (Denmark)

    Jespersen, Jesper Lebæk; Talat Ali, Syed; Pleth Nielsen, Lars

    is the second and main part of the project. The main challenges in developing metal oxide sensors are proper choice of the material, sensor location and fabrication technique due to lifetime and cross sensitivity issues in harsh environment where the problems like de-bonding or some kind of diffusion......SEMOS is a joint project between Aalborg University, Danish Technological Institute and Danish Technical University in which micro temperature sensors and metal oxide-based gas sensors are developed and tested in a simulated fuel cell environment as well as in actual working fuel cells. Initially...... complex and sensors are not easily implemented in the construction. Hence sensor interface and sensor position must therefore be chosen carefully in order to make the sensors as non-intrusive as possible. Metal Oxide Sensors (MOX) for measuring H2, O2 and CO concentration in a fuel cell environment...

  1. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    2016-10-07

    Oct 7, 2016 ... spectra at nearly normal incident light. The estimated direct optical band gap energy (Ed g) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm2O3 thin films were found to obey the single oscillator model. Keywords. Transparent oxide ...

  2. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  3. Oxide ferroelectric thin films: synthesis from organometallic compounds and properties

    International Nuclear Information System (INIS)

    Vertoprakhov, Vladimir N; Nikulina, Lyubov' D; Igumenov, Igor K

    2005-01-01

    Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10-15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.

  4. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  5. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  6. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  7. Method of forming a thin unbacked metal foil

    Science.gov (United States)

    Duchane, David V.; Barthell, Barry L.

    1984-01-01

    In a method of forming a thin (foil having a desired curviplanar shape, a soluble polymeric film, preferably comprising polyvinyl alcohol, is formed on a supporting structure having a shape that defines the desired shape of the foil product. A layer of metal foil is deposited onto one side of the soluble film, preferably by vacuum vapor deposition. The metallized film is then immersed in a suitable solvent to dissolve the film and thereby leave the metal foil as an unbacked metal foil element mounted on the supporting structure. Aluminum foils less than 0.2 .mu.m (2,000 .ANG.) thick and having an areal density of less than 54 .mu.g/cm.sup.2 have been obtained.

  8. Recent Advances in Antimicrobial Hydrogels Containing Metal Ions and Metals/Metal Oxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Fazli Wahid

    2017-11-01

    Full Text Available Recently, the rapid emergence of antibiotic-resistant pathogens has caused a serious health problem. Scientists respond to the threat by developing new antimicrobial materials to prevent or control infections caused by these pathogens. Polymer-based nanocomposite hydrogels are versatile materials as an alternative to conventional antimicrobial agents. Cross-linking of polymeric materials by metal ions or the combination of polymeric hydrogels with nanoparticles (metals and metal oxide is a simple and effective approach for obtaining a multicomponent system with diverse functionalities. Several metals and metal oxides such as silver (Ag, gold (Au, zinc oxide (ZnO, copper oxide (CuO, titanium dioxide (TiO2 and magnesium oxide (MgO have been loaded into hydrogels for antimicrobial applications. The incorporation of metals and metal oxide nanoparticles into hydrogels not only enhances the antimicrobial activity of hydrogels, but also improve their mechanical characteristics. Herein, we summarize recent advances in hydrogels containing metal ions, metals and metal oxide nanoparticles with potential antimicrobial properties.

  9. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  10. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  11. Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films

    International Nuclear Information System (INIS)

    Biswas, Abhijit; Jeong, Yoon Hee

    2015-01-01

    Strong spin-orbit coupled 5d transition metal based ABO 3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO 3 . Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO 3 thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics

  12. Metal oxide/polyaniline nanocomposites

    Indian Academy of Sciences (India)

    Nanocomposites of iron oxide with conducting polymer in the form of powders of varying compositions have been studied to understand the effects of particle size, cluster size and magnetic inter-particle interactions. The sizes of the nanoparticles were estimated to be ∼ 10–20 nm from the X-ray diffraction (XRD) and the ...

  13. Comprehensive review on the development of high mobility in oxide thin film transistors

    Science.gov (United States)

    Choi, Jun Young; Lee, Sang Yeol

    2017-11-01

    Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

  14. The growth and evolution of thin oxide films on delta-plutonium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  15. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

    NARCIS (Netherlands)

    Nag, M.; Muller, R.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, A.; Gelinck, G.; Fukui, Y.; Groeseneken, G.; Heremans, P.

    2015-01-01

    We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

  16. Organic photovoltaics using thin gold film as an alternative anode to indium tin oxide

    International Nuclear Information System (INIS)

    Haldar, Amrita; Yambem, Soniya D.; Liao, Kang-Shyang; Alley, Nigel J.; Dillon, Eoghan P.; Barron, Andrew R.; Curran, Seamus A.

    2011-01-01

    Indium Tin Oxide (ITO) is the most commonly used anode as a transparent electrode and more recently as an anode for organic photovoltaics (OPVs). However, there are significant drawbacks in using ITO which include high material costs, mechanical instability including brittleness and poor electrical properties which limit its use in low-cost flexible devices. We present initial results of poly(3-hexylthiophene): phenyl-C 61 -butyric acid methyl ester OPVs showing that an efficiency of 1.9% (short-circuit current 7.01 mA/cm 2 , open-circuit voltage 0.55 V, fill factor 0.49) can be attained using an ultra thin film of gold coated glass as the device anode. The initial I-V characteristics demonstrate that using high work function metals when the thin film is kept ultra thin can be used as a replacement to ITO due to their greater stability and better morphological control.

  17. Metal oxide electrocatalysts for alternative energy technologies

    Science.gov (United States)

    Pacquette, Adele Lawren

    This dissertation focuses on the development of metal oxide electrocatalysts with varying applications for alternative energy technologies. Interest in utilizing clean, renewable and sustainable sources of energy for powering the planet in the future has received much attention. This will address the growing concern of the need to reduce our dependence on fossil fuels. The facile synthesis of metal oxides from earth abundant metals was explored in this work. The electrocatalysts can be incorporated into photoelectrochemical devices, fuel cells, and other energy storage devices. The first section addresses the utilization of semiconductors that can harness solar energy for water splitting to generate hydrogen. An oxysulfide was studied in order to combine the advantageous properties of the stability of metal oxides and the visible light absorbance of metal chalcogenides. Bi 2O2S was synthesized under facile hydrothermal conditions. The band gap of Bi2O2S was smaller than that of its oxide counterpart, Bi2O3. Light absorption by Bi 2O2S was extended to the visible region (>600 nm) in comparison to Bi2O3. The formation of a composite with In 2O3 was formed in order to create a UV irradiation protective coating of the Bi2O2S. The Bi2O2S/In 2O3 composite coupled with a dye CrTPP(Cl) and cocatalysts Pt and Co3O4 was utilized for water splitting under light irradiation to generate hydrogen and oxygen. The second section focuses on improving the stability and light absorption of semiconductors by changing the shapes and morphologies. One of the limitations of semiconductor materials is that recombination of electron-hole pairs occur within the bulk of the materials instead of migration to the surface. Three-dimensional shapes, such as nanorods, can prevent this recombination in comparison to spherical particles. Hierarchical structures, such as dendrites, cubes, and multipods, were synthesized under hydrothermal conditions, in order to reduce recombination and improve

  18. Improved description of metal oxide stability

    DEFF Research Database (Denmark)

    Jauho, Thomas Stenbæk; Olsen, Thomas; Bligaard, Thomas

    2015-01-01

    transition-metal oxides. The mean absolute error relative to experiments is 0.21 eV and 0.38 eV per oxygen atom for rAPBE and RPA, respectively, and thus the rAPBE method greatly improves the description of metal-oxygen bonds across a wide range of oxides. The failure of the RPA can be partly attributed......The renormalized adiabatic PBE (rAPBE) method has recently been shown to comprise a significant improvement over the random phase approximation (RPA) for total energy calculations of simple solids and molecules. Here we consider the formation energies of 19 group I and II metal oxides and a few...... to the lack of error cancellation between the correlation energy of the oxide on the one hand and the bulk metal and oxygen molecule on the other hand, which are all separately predicted much too negative by the RPA. We ascribe the improved performance of the rAPBE to its significantly better description...

  19. Metal Oxide Vertical Graphene Hybrid Supercapacitors

    Science.gov (United States)

    Meyyappan, Meyya (Inventor)

    2018-01-01

    A metal oxide vertical graphene hybrid supercapacitor is provided. The supercapacitor includes a pair of collectors facing each other, and vertical graphene electrode material grown directly on each of the pair of collectors without catalyst or binders. A separator may separate the vertical graphene electrode materials.

  20. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  1. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  2. The influence of annealing on yttrium oxide thin film deposited by reactive magnetron sputtering: Process and microstructure

    Directory of Open Access Journals (Sweden)

    Y. Mao

    2017-01-01

    Full Text Available Yttrium oxide thin films were prepared by reactive magnetron sputtering in different deposition condition with various oxygen flow rates. The annealing influence on the yttrium oxide film microstructure is investigated. The oxygen flow shows a hysteresis behavior on the deposition rate. With a low oxygen flow rate, the so called metallic mode process with a high deposition rate (up to 1.4µm/h was achieved, while with a high oxygen flow rate, the process was considered to be in the poisoned mode with an extremely low deposition rate (around 20nm/h. X-ray diffraction (XRD results show that the yttrium oxide films that were produced in the metallic mode represent a mixture of different crystal structures including the metastable monoclinic phase and the stable cubic phase, while the poisoned mode products show a dominating monoclinic phase. The thin films prepared in metallic mode have relatively dense structures with less porosity. Annealing at 600 °C for 15h, as a structure stabilizing process, caused a phase transformation that changes the metastable monoclinic phase to stable cubic phase for both poisoned mode and metallic mode. The composition of yttrium oxide thin films changed from nonstoichiometric to stoichiometric together with a lattice parameter variation during annealing process. For the metallic mode deposition however, cracks were formed due to the thermal expansion coefficient difference between thin film and the substrate material which was not seen in poisoned mode deposition. The yttrium oxide thin films that deposited in different modes give various application options as a nuclear material.

  3. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.

    Science.gov (United States)

    Çakır, M Cihan; Çalışkan, Deniz; Bütün, Bayram; Özbay, Ekmel

    2016-09-29

    Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption-dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  4. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

    Directory of Open Access Journals (Sweden)

    M. Cihan Çakır

    2016-09-01

    Full Text Available Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption–dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  5. Metal–Organic Framework Thin Films as Platforms for Atomic Layer Deposition of Cobalt Ions To Enable Electrocatalytic Water Oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Kung, Chung-Wei; Mondloch, Joseph E.; Wang, Timothy C.; Bury, Wojciech; Hoffeditz, William; Klahr, Benjamin M.; Klet, Rachel C.; Pellin, Michael J.; Farha, Omar K.; Hupp, Joseph T.

    2015-12-30

    Thin films of the metal organic framework (MOP) NU-1000 were grown on conducting glass substrates. The films uniformly cover the conducting glass substrates and are composed of free-standing sub-micrometer rods. Subsequently, atomic layer deposition (ALD) was utilized to deposit Co2+ ions throughout the entire MOF film via self-limiting surface-mediated reaction chemistry. The Co ions bind at aqua and hydroxo sites lining the channels of NU-1000, resulting in three-dimensional arrays of separated Co ions in the MOF thin film. The Co-modified MOF thin films demonstrate promising electrocatalytic activity for water oxidation.

  6. Charge transport in metal oxide nanocrystal-based materials

    OpenAIRE

    Runnerstrom, Evan Lars

    2016-01-01

    There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochem...

  7. Preparation of oxide materials from metal alkoxides

    International Nuclear Information System (INIS)

    Turevskaya, E.P.; Turova, N.Ya.; Yanovskaya, M.I.

    2000-01-01

    The results of studies on the sol-gel technologies on the basis of alkoxides are presented. The synthesis and properties of titanates zirconates, niobates, tantalates, vanadates and solid solutions on the basis of Mo, W and Bi oxides, iron oxides and high-temperature superconductors are presented. The most important aspects, determining the choice of optimal conditions for preparation of oxides of concrete compositions with required properties are pointed out. Accomplishment of the whole chain of studies made it possible to synthesize a broad range of metal alkoxides and study their properties and also carry out large-scale studies on preparation of various oxides and materials on the basis thereof, using the source base of the sol-gel method [ru

  8. 40 CFR 721.5549 - Lithiated metal oxide.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Lithiated metal oxide. 721.5549... Substances § 721.5549 Lithiated metal oxide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as lithiated metal oxide (LiNiO2) (PMN P-96-19...

  9. 40 CFR 721.4610 - Mixed metal oxides (generic).

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Mixed metal oxides (generic). 721.4610... Substances § 721.4610 Mixed metal oxides (generic). (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified generically as mixed metal oxides (PMN P-98-0002...

  10. Polymorphism Control in Nanostructured Metal Oxides

    Science.gov (United States)

    Sood, Shantanu

    Polymorphic phase transformations are common to all nanocrystalline binary metal oxides. The polymorphic nature of such metal oxides makes available a large number of phases with differing crystal structures, each stable under certain conditions of temperature, pressure, and/or particle size. These different crystal structures translate to unique physical and chemical properties for each structural class of polymorphs. Thus predicting when polymorphic phase transitions are likely to occur becomes important to the synthesis of stable functional materials with desired properties. Theoretical calculations using a heuristic approach have resulted in an accurate estimation of the critical particle size predicting metastable to stable phase transitions. This formula is applied to different case studies: for anatase to rutile titania; gamma-Alumina to alpha-Alumina; and tetragonal to monoclinic zirconia. The theoretical values calculated have been seen to be very close to the experimental results from the literature. Manifestation of the effect of phase transitions in nanostructured metal oxides was provided in the study of metastable to stable phase transitions in WO3. Nanowires of tungsten trioxide have been synthesized in-situ inside an electron microscope. Such structure of tungsten trioxide result due to a metastable to stable phase transformation, from the cubic to the monoclinic phase. The transformation is massive and complete. The structures formed are unique one-dimensional nanowires. Such a method can be scaled inside any equipment equipped with an electron gun, for example lithography systems either using STEM or E-beam lithography. Another study on nanowire formation in binary metal oxides involved the synthesis of stable orthorhombic MoO3 by means of blend electrospinning. Both a traditional single jet electrospinning set up and a novel high-throughput process to get high aspect ratio nanowires. The latter is a jet-controlled and flow controlled

  11. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  12. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  13. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  14. Visible light sensitive cupric oxide metal-semiconductor-metal photodetectors

    Science.gov (United States)

    Raghavendra, P. V.; Bhat, J. S.; Deshpande, N. G.

    2018-01-01

    The visible light response of Ag-CuO-Ag metal-semiconductor-metal (MSM) photodetector is presented. Electron beam deposited CuO thin films consisted of tightly packed nanocrystallites in monoclinic phase. The observed red-shifts in indirect band-gap from 1.09 eV to 0.99 eV and direct band-gap from 2.92 eV to 2.87 eV, with annealing temperature, is attributed to the weak quantum confinement effect. CuO thin films annealed at 500 °C have a p-type conductivity of 4.33 × 10-2 (ohm-cm)-1 and mobility of 13.2 cm2/V-s. Significant responsivities of 0.33 mA/W and 0.59 mA/W for blue and red lights, respectively, in Ag-CuO-Ag photodetector are illustrative for using it as visible light sensor.

  15. Optical methods for thickness measurements on thin metal films.

    Science.gov (United States)

    Pokrowsky, P

    1991-08-01

    The thickness and the dielectric constants of thin metal films on glass substrates are determined by two different methods. The first method is a combination of transmission and ellipsometer measurements (TELL method) and the second is based on attenuated total reflection (ATR method in the Kretschmann arrangement). For comparison, both methods are applied to gold films within a thickness range of 20-80 nm. Furthermore, the TELL method was applied to chromium films of thicknesses up to 150 nm. All experiments are done with a He-Ne laser at 633-nm wavelength.

  16. Magnetic Interactions in Transition-Metal Oxides

    OpenAIRE

    Solovyev, I. V.

    2003-01-01

    This a review article, which presents a general framework for the analysis of interatomic magnetic interactions in the spin-density-functional theory, which is based on the magnetic force theorem, make a link with the models for transition-metal oxides, and gives several examples of how this strategy can be used for the analysis of magnetic properties of colossal-magnetoresistive perovskite manganites, double perovskite and pyrochlore compounds.

  17. Catalysed electrolytic metal oxide dissolution processes

    International Nuclear Information System (INIS)

    Machuron-Mandard, X.

    1994-01-01

    The hydrometallurgical processes designed for recovering valuable metals from mineral ores as well as industrial wastes usually require preliminary dissolution of inorganic compounds in aqueous media before extraction and purification steps. Unfortunately, most of the minerals concerned hardly or slowly dissolve in acidic or basic solutions. Metallic oxides, sulfides and silicates are among the materials most difficult to dissolve in aqueous solutions. They are also among the main minerals containing valuable metals. The redox properties of such materials sometimes permit to improve their dissolution by adding oxidizing or reducing species to the leaching solution, which leads to an increase in the dissolution rate. Moreover, limited amounts of redox promoters are required if the redox agent is regenerated continuously thanks to an electrochemical device. Nuclear applications of such concepts have been suggested since the dissolution of many actinide compounds (e.g., UO 2 , AmO 2 , PuC, PuN,...) is mainly based on redox reactions. In the 1980s, improvements of the plutonium dioxide dissolution process have been proposed on the basis of oxidation-reduction principles, which led a few years later to the design of industrial facilities (e.g., at Marcoule or at the french reprocessing plant of La Hague). General concepts and well-established results obtained in France at the Atomic Energy Commission (''Commissariat a l'Energie Atomique'') will be presented and will illustrate applications to industrial as well as analytical problems. (author)

  18. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  19. Hydrous metal oxide catalysts for oxidation of hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Miller, J.E.; Dosch, R.G.; McLaughlin, L.I. [Sandia National Labs., Albuquerque, NM (United States). Process Research Dept.

    1993-07-01

    This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

  20. Fabrication of arrays of metal and metal oxide nanotubes by shadow evaporation.

    Science.gov (United States)

    Dickey, Michael D; Weiss, Emily A; Smythe, Elizabeth J; Chiechi, Ryan C; Capasso, Federico; Whitesides, George M

    2008-04-01

    This paper describes a simple technique for fabricating uniform arrays of metal and metal oxide nanotubes with controlled heights and diameters. The technique involves depositing material onto an anodized aluminum oxide (AAO) membrane template using a collimated electron beam evaporation source. The evaporating material enters the porous openings of the AAO membrane and deposits onto the walls of the pores. The membrane is tilted with respect to the column of evaporating material, so the shadows cast by the openings of the pores onto the inside walls of the pores define the geometry of the tubes. Rotation of the membrane during evaporation ensures uniform deposition inside the pores. After evaporation, dissolution of the AAO in base easily removes the template to yield an array of nanotubes connected by a thin backing of the same metal or metal oxide. The diameter of the pores dictates the diameter of the tubes, and the incident angle of evaporation determines the height of the tubes. Tubes up to approximately 1.5 mum in height and 20-200 nm in diameter were fabricated. This method is adaptable to any material that can be vapor-deposited, including indium-tin oxide (ITO), a conductive, transparent material that is useful for many opto-electronic applications. An array of gold nanotubes produced by this technique served as a substrate for surface-enhanced Raman spectroscopy: the Raman signal (per molecule) from a monolayer of benzenethiolate was a factor of approximately 5 x 10(5) greater than that obtained using bulk liquid benzenethiol.

  1. TXRF analysis of trace metals in thin silicon nitride films

    International Nuclear Information System (INIS)

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  2. Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

    Science.gov (United States)

    Thanawala, Sachin

    Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

  3. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  4. Surface oxidation on thin films affects ionization cross section induced by proton beam

    International Nuclear Information System (INIS)

    Bertol, Ana Paula Lamberti; Vasconcellos, M.A.Z.; Hinrichs, Ruth; Limandri, Silvina; Trincavelli, Jorge

    2012-01-01

    Full text: In microanalysis techniques such as Particle Induced X-ray Emission (PIXE), the transformation from intensity to concentration is made by standard less software that needs exact values of fundamental parameters such as the ionization cross section, transition probabilities of the different electronic levels, and fluorescent yield. The three parameters together measure the photon generating probability of an electronic transition and can be determined experimentally under the name of production cross section. These measurements are performed on thin films, with thickness around 10 nm, but most studies do not take into account any spontaneous surface oxidation. In this work, in the attempt to obtain cross section values of Al, Si and Ti, in metallic and oxide films, the influence of surface oxidation on the metallic films was established. Simulations considering the oxidation with the software SIMNRA on the Rutherford backscattering (RBS) spectra obtained from the films provided mass thickness values used to calculate the cross section data that were compared with theoretical values (PWBA and ECPSSR), and with experimental values and empirical adjustments from other studies. The inclusion of the natural oxidation affects the values of cross section, and may be one of the causes of discrepancies between the experimental values published in literature. (author)

  5. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  6. Polymer assisted deposition of electrochromic tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kalagi, S.S. [Govindram Seksaria Science College, Belgaum 590006, Karnataka (India); Dalavi, D.S.; Pawar, R.C.; Tarwal, N.L.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2010-03-18

    We report the synthesis of structurally and uniformly deposited porous tungsten oxide (WO{sub 3}) thin films for the first time by the novel route of polymer assisted deposition (PAD) using ammonium tungstate as a precursor with polyvinyl alcohol (PVA) as an additive. The effect of deposition parameters on the morphological, optical and electrochemical performance of the thin films is investigated. WO{sub 3} thin films were characterized for their structural, morphological, optical and electrochromic properties. XRD result indicates monoclinic phase of WO{sub 2.92}. FT-Raman studies show high intensity peaks centered at 997 cm{sup -1}and 798 cm{sup -1}. SEM results indicate that there is uniform deposition of porous WO{sub 3}-PVA agglomerates on the transparent substrates. SEM data show low dense structure of an average grain size of about 1 {mu}m. Electrochromic studies reveal highly reversible and the stable nature of the thin films. Transmission data show an optical modulation density of 46.57% at 630 nm with an excellent reversibility of 89% and an electrochromic coloration efficiency of 36 cm{sup 2}/C.

  7. Selective propene oxidation on mixed metal oxide catalysts

    International Nuclear Information System (INIS)

    James, David William

    2002-01-01

    Selective catalytic oxidation processes represent a large segment of the modern chemical industry and a major application of these is the selective partial oxidation of propene to produce acrolein. Mixed metal oxide catalysts are particularly effective in promoting this reaction, and the two primary candidates for the industrial process are based on iron antimonate and bismuth molybdate. Some debate exists in the literature regarding the operation of these materials and the roles of their catalytic components. In particular, iron antimonate catalysts containing excess antimony are known to be highly selective towards acrolein, and a variety of proposals for the enhanced selectivity of such materials have been given. The aim of this work was to provide a direct comparison between the behaviour of bismuth molybdate and iron antimonate catalysts, with additional emphasis being placed on the component single oxide phases of the latter. Studies were also extended to other antimonate-based catalysts, including cobalt antimonate and vanadium antimonate. Reactivity measurements were made using a continuous flow microreactor, which was used in conjunction with a variety of characterisation techniques to determine relationships between the catalytic behaviour and the properties of the materials. The ratio of Fe/Sb in the iron antimonate catalyst affects the reactivity of the system under steady state conditions, with additional iron beyond the stoichiometric value being detrimental to the acrolein selectivity, while extra antimony provides a means of enhancing the selectivity by decreasing acrolein combustion. Studies on the single antimony oxides of iron antimonate have shown a similarity between the reactivity of 'Sb 2 O 5 ' and FeSbO 4 , and a significant difference between these and the Sb 2 O 3 and Sb 2 O 4 phases, implying that the mixed oxide catalyst has a surface mainly comprised of Sb 5+ . The lack of reactivity of Sb 2 O 4 implies a similarity of the surface with

  8. Laser deposition rates of thin films of selected metals and alloys

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

    Thin films of Cu, Zn and Sn as well as mixtures of these elements have been produced by Pulsed Laser Deposition (PLD). The deposition rate of single and multicomponent metallic targets was determined. The strength of PLD is that the stoichiometry of complex compounds, even of complicated alloys...... or metal oxides, can be preserved from target to film. We apply this technique to design films of a mixture of Cu, Zn and Sn, which are constituents of the chalcogenide CZTS, which has a composition close to Cu2ZnSnS4. This compound is expected to be an important candidate for absorbers in new solar cells...... for alloys of the different elements as well as compounds with S will be presented....

  9. Structural and chemical characterization of terbia thin films grown on hexagonally close packed metal substrates

    Science.gov (United States)

    Cartas, William

    Rare earth oxides (REOs) exhibit favorable catalytic performance for a diverse set of chemical transformations, including both partial and complete oxidation reactions. I will discuss our efforts to develop thin film systems of terbia for model surface science investigations of a REO that is effectively reducible, and which is thus expected to promote complete oxidation chemistry of adsorbed species. The growth of terbia on Cu(111) is shown to produce a complex surface that exhibits multiple phases of the oxide as well as exposed substrate. Growing the film on Pt(111) results in more uniform, single phase, and closed film. We used low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to characterize the structural properties of terbia thin films grown on Pt(111) in ultrahigh vacuum (UHV) using physical vapor deposition. We find that the REO grows as a high quality Tb2O 3(111) film, and adopts oxygen-deficient fluorite structures wherein the metal cations form a hexagonal lattice in registry with the Pt(111) substrate, while oxygen vacancies are randomly distributed within the film. The Tb 2O3(111) films are thermally stable when heated to 1000 K in UHV. LEED and STM show that a fraction of the Tb2O3 forms hexagonal islands when first deposited, and further depositions typically result in three dimensional growth of the film. The Tb2O3 (111) / Pt(111) system produces a coincidence structure, seen very clearly in LEED images. We have also found that Tb2O3(111) films can be oxidized in UHV by exposure to plasma-generated atomic oxygen beams. The oxidized films have an estimated TbO2 stoichiometry and decompose to Tb2O3 during heating, with O2 desorption starting at about 500 K. Terbia films oxidized at 90 K show a weakly bound state of oxygen that is likely chemisorbed. Temperature programmed reaction spectroscopy (TPRS) studies using methanol show that increased oxygen in the film does not modify the chemical selectivity of the film; however

  10. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  11. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  12. Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

    International Nuclear Information System (INIS)

    Pereira, L.; Barquinha, P.; Fortunato, E.; Martins, R.

    2005-01-01

    In this work, metal induced crystallization using nickel was employed to obtain polycrystalline silicon by crystallization of amorphous films for thin film transistor applications. The devices were produced through only one lithographic process with a bottom gate configuration using a new gate dielectric consisting of a multi-layer of aluminum oxide/titanium oxide produced by atomic layer deposition. The best results were obtained for TFTs with the active layer of poly-Si crystallized for 20 h at 500 deg. C using a nickel layer of 0.5 nm where the effective mobility is 45.5 cm 2 V -1 s -1 . The threshold voltage, the on/off current ratio and the sub-threshold voltage are, respectively, 11.9 V, 5.55x10 4 and 2.49 V/dec

  13. Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids

    Science.gov (United States)

    Giangregorio, M. M.; Jiao, W.; Bianco, G. V.; Capezzuto, P.; Brown, A. S.; Bruno, G.; Losurdo, M.

    2015-07-01

    Graphene/metal heterojunctions are ubiquitous in graphene-based devices and, therefore, have attracted increasing interest of researchers. Indeed, the literature on the field reports apparently contradictory results about the effect of a metal on graphene doping. Here, we elucidate the effect of metal nanostructuring and oxidation on the metal work function (WF) and, consequently, on the charge transfer and doping of graphene/metal hybrids. We show that nanostructuring and oxidation of metals provide a valid support to frame WF and doping variation in metal/graphene hybrids. Chemical vapour-deposited monolayer graphene has been transferred onto a variety of metal surfaces, including d-metals, such as Ag, Au, and Cu, and sp-metals, such as Al and Ga, configured as thin films or nanoparticle (NP) ensembles of various average sizes. The metal-induced charge transfer and the doping of graphene have been investigated using Kelvin probe force microscopy (KPFM), and corroborated by Raman spectroscopy and plasmonic ellipsometric spectroscopy. We show that when the appropriate WF of the metal is considered, without any assumption, taking into account WF variations by nanostructure and/or oxidation, a linear relationship between the metal WF and the doping of graphene is found. Specifically, for all metals, nanostructuring lowers the metal WF. In addition, using gold as an example, a critical metal nanoparticle size is found at which the direction of charge transfer, and consequently graphene doping, is inverted.

  14. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, Patrick; Bierwagen, Oliver [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

    2015-02-23

    The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga{sub 2}O{sub 3}, In{sub 2}O{sub 3}, and SnO{sub 2} on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga{sub 2}O, In{sub 2}O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO{sub 2}, somewhat lower for In{sub 2}O{sub 3}, and the lowest for Ga{sub 2}O{sub 3}. Our findings can be generalized to further oxides that possess related sub-oxides.

  15. Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

    Energy Technology Data Exchange (ETDEWEB)

    Provo, James L., E-mail: jlprovo@verizon.net [Consultant, J. L. Provo Consulting, Trinity, Florida 34655-7179 (United States)

    2016-07-15

    Aluminum has desirable characteristics of good thermal properties, good electrical characteristics, good optical properties, and the characteristic of being nonmagnetic and having a low atomic weight (26.98 g atoms), but because of its low melting point (660 °C) and ability as a reactive metal to alloy with most common metals in use, it has been ignored as a substrate material for use in processing thin films. The author developed a simple solution to this problem, by putting a permeation barrier of alumina (Al{sub 2}O{sub 3}) onto the surface of pure Al substrates by using a standard chemical oxidation process of the surface (i.e., anodization), before additional film deposition of reactive metals at temperatures up to 500 °C for 1-h, without the formation of alloys or intermetallic compounds to affect the good properties of Al substrates. The chromic acid anodization process used (MIL-A-8625) produced a film barrier of ∼(500–1000) nm of alumina. The fact that refractory Al{sub 2}O{sub 3} can inhibit the reaction of metals with Al at temperatures below 500 °C suggests that Al is a satisfactory substrate if properly oxidized prior to film deposition. To prove this concept, thin film samples of Cr, Mo, Er, Sc, Ti, and Zr were prepared on anodized Al substrates and studied by x-ray diffraction, Rutherford ion back scattering, and Auger/argon sputter surface profile analysis to determine any film substrate interactions. In addition, a major purpose of our study was to determine if ErD{sub 2} thin films could be produced on Al substrates with fully hydrided Er films. Thus, a thin film of ErD{sub 2} on an anodized Al substrate was prepared and studied, with and without the alumina permeation barrier. Films for study were prepared on 1.27 cm diameter Al substrates with ∼500 nm of the metals studied after anodization. Substrates were weighed, cleaned, and vacuum fired at 500 °C prior to use. The Al substrates were deposited using standard electron

  16. Low Temperature, High Energy Density Micro Thin Film Solid Oxide Fuel Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A new type of solid oxide fuel cell based on thin film technology and ultra-thin electrolyte is being proposed to develop to realize major reductions in fuel cell...

  17. Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano; Basu, Sourav; Rosen, Evelyn; Holt, Jason; Thomsen, Scott

    2017-10-17

    An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

  18. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

    Science.gov (United States)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

    2016-11-17

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  19. GRAPHENE BASED METAL AND METAL OXIDE NANOCOMPOSITES: SYNTHESIS, PROPERTIES AND THEIR APPLICATIONS

    KAUST Repository

    Khan, Mujeeb

    2015-06-11

    Graphene, an atomically thin two-dimensional carbonaceous material, has attracted tremendous attention in the scientific community, due to its exceptional electronic, electrical, and mechanical properties. Indeed, with the recent explosion of methods for a large-scale synthesis of graphene, the number of publications related to graphene and other graphene based materials have increased exponentially. Particularly the easy preparation of graphene like materials, such as, highly reduced graphene oxide (HRG) via reduction of graphite oxide (GO), offers a wide range of possibilities for the preparation of graphene based inorganic nanocomposites by the incorporation of various functional nanomaterials for a variety of applications. In this review, we discuss the current development of graphene based metal and metal oxide nanocomposites, with a detailed account of their synthesis and properties. Specifically, much attention has been given to their wide range of applications in various fields, including, electronics, electrochemical and electrical fields. Overall, by the inclusion of various references, this review covers in detail aspects of the graphene-based inorganic nanocomposites.

  20. Self-assembled monolayers on metal oxides : applications in nanotechnology

    NARCIS (Netherlands)

    Yildirim, O.

    2010-01-01

    The thesis describes the use of phosph(on)ate-based self-assembled monolayers (SAMs) to modify and pattern metal oxides. Metal oxides have interesting electronic and magnetic properties such as insulating, semiconducting, metallic, ferromagnetic etc. and SAMs can tailor the surface properties. FePt

  1. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    OpenAIRE

    Ganesh E. Patil; D. D. Kajale; D. N. Chavan; N. K. Pawar; V. B. Gaikwad; G. H. Jain

    2010-01-01

    Polycrystalline tin oxide (SnO2) thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT). The film was characterized for their phase and morphology by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2), liquefied petroleum gas (LPG), ethanol vapors (C2H5OH), NH3, CO, CO2, Cl2 an...

  2. Interfacial engineering of metal-insulator-semiconductor junctions for efficient and stable photoelectrochemical water oxidation

    Science.gov (United States)

    Digdaya, Ibadillah A.; Adhyaksa, Gede W. P.; Trześniewski, Bartek J.; Garnett, Erik C.; Smith, Wilson A.

    2017-06-01

    Solar-assisted water splitting can potentially provide an efficient route for large-scale renewable energy conversion and storage. It is essential for such a system to provide a sufficiently high photocurrent and photovoltage to drive the water oxidation reaction. Here we demonstrate a photoanode that is capable of achieving a high photovoltage by engineering the interfacial energetics of metal-insulator-semiconductor junctions. We evaluate the importance of using two metals to decouple the functionalities for a Schottky contact and a highly efficient catalyst. We also illustrate the improvement of the photovoltage upon incidental oxidation of the metallic surface layer in KOH solution. Additionally, we analyse the role of the thin insulating layer to the pinning and depinning of Fermi level that is responsible to the resulting photovoltage. Finally, we report the advantage of using dual metal overlayers as a simple protection route for highly efficient metal-insulator-semiconductor photoanodes by showing over 200 h of operational stability.

  3. Suppression of Magnetoresistance in Thin WTe2 Flakes by Surface Oxidation.

    Science.gov (United States)

    Woods, John M; Shen, Jie; Kumaravadivel, Piranavan; Pang, Yuan; Xie, Yujun; Pan, Grace A; Li, Min; Altman, Eric I; Lu, Li; Cha, Judy J

    2017-07-12

    Recent renewed interest in layered transition metal dichalcogenides stems from the exotic electronic phases predicted and observed in the single- and few-layer limit. Realizing these electronic phases requires preserving the desired transport properties down to a monolayer, which is challenging. Surface oxides are known to impart Fermi level pinning or degrade the mobility on a number of different systems, including transition metal dichalcogenides and black phosphorus. Semimetallic WTe 2 exhibits large magnetoresistance due to electron-hole compensation; thus, Fermi level pinning in thin WTe 2 flakes could break the electron-hole balance and suppress the large magnetoresistance. We show that WTe 2 develops an ∼2 nm thick amorphous surface oxide, which shifts the Fermi level by ∼300 meV at the WTe 2 surface. We also observe a dramatic suppression of the magnetoresistance for thin flakes. However, due to the semimetallic nature of WTe 2 , the effects of Fermi level pinning are well screened and are not the dominant cause for the suppression of magnetoresistance, supported by fitting a two-band model to the transport data, which showed the electron and hole carrier densities are balanced down to ∼13 nm. However, the fitting shows a significant decrease of the mobilities of both electrons and holes. We attribute this to the disorder introduced by the amorphous surface oxide layer. Thus, the decrease of mobility is the dominant factor in the suppression of magnetoresistance for thin WTe 2 flakes. Our study highlights the critical need to investigate often unanticipated and sometimes unavoidable extrinsic surface effects on the transport properties of layered dichalcogenides and other 2D materials.

  4. Growth and sacrificial oxidation of transition metal nanolayers

    NARCIS (Netherlands)

    T. Tsarfati,; Zoethout, E.; van de Kruijs, R.; F. Bijkerk,

    2009-01-01

    Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e(-)

  5. Growth and sacrificial oxidation of transition metal nanolayers

    NARCIS (Netherlands)

    Tsarfati, T.; Tsarfati, Tim; Zoethout, E.; Zoethout, E.; van de Kruijs, Robbert Wilhelmus Elisabeth; Bijkerk, Frederik

    2009-01-01

    Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3–4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e−

  6. Energy level alignment in metal/oxide/semiconductor and organic dye/oxide systems

    Science.gov (United States)

    Bersch, Eric

    The alignment between the energy levels of the constituent materials of metal-oxide-semiconductor field effect transistors (MOSFET's) and dye sensitized solar cell (DSSC's) is a key property that is critical to the functions of these devices. We have measured the energy level alignment (band offsets) for metal/oxide/semiconductor (MOS) systems with high-kappa gate oxides and metal gates, and for organic dye/oxide systems. The combination of UV photoemission spectroscopy (UPS) and inverse photoemission spectroscopy (IPS) in the same vacuum system was used to measure both the occupied and unoccupied density of states (DOS), respectively, of these materials systems. Additional soft X-ray photoemission spectroscopy (SXPS) measurements were made of both the valence bands and core levels of the high-kappa systems. The combination of the UPS, IPS and SXPS measurements were used to determine the band offsets between the high-kappa oxides and the Si substrates of thin film oxide/Si samples. To find the metal-oxide band offsets, thin metal layers were sequentially deposited on the oxide surfaces, followed by spectroscopic measurements. These measurements, combined with the measurements from the clean oxide surfaces, were used to find the metal-oxide band offsets. Metal-oxide band offset values were also calculated by the Interface Gap State (IGS) model. We compared the experimental metal-oxide conduction band offset (CBO) values with those calculated using the IGS model, and found that they tended to agree well for Ru/oxide and Ti/oxide systems, but not as well for Al/oxide systems. Through core level spectroscopy, we correlated observations of the composition of the metallic layers with the trends in agreement between the experimental and IGS CBO values, which led to the conclusion that the IGS model gives accurate values for the CBO for systems with chemically abrupt interfaces. Core level spectroscopy of the MOS systems also showed that Al and Ti overlayers reduced the

  7. Plasmonic nanostructured metal-oxide-semiconductor reflection modulators.

    Science.gov (United States)

    Olivieri, Anthony; Chen, Chengkun; Hassan, Sa'ad; Lisicka-Skrzek, Ewa; Tait, R Niall; Berini, Pierre

    2015-04-08

    We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as a grating coupler for perpendicularly incident p-polarized light to surface plasmons supported by the patch. Modulation is produced by charging and discharging the capacitor and exploiting the carrier refraction effect in silicon along with the high sensitivity of strongly confined surface plasmons to index perturbations. The area of the modulator is set by the area of the incident beam, leading to a very compact device for a strongly focused beam (∼2.5 μm in diameter). Theoretically, the modulator can operate over a broad electrical bandwidth (tens of gigahertz) with a modulation depth of 3 to 6%, a loss of 3 to 4 dB, and an optical bandwidth of about 50 nm. About 1000 modulators can be integrated over a 50 mm(2) area producing an aggregate electro-optic modulation rate in excess of 1 Tb/s. We demonstrate experimentally modulators operating at telecommunications wavelengths, fabricated as nanostructured Au/HfO2/p-Si capacitors. The modulators break conceptually from waveguide-based devices and belong to the same class of devices as surface photodetectors and vertical cavity surface-emitting lasers.

  8. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  9. Natural Oxidation of Ultra-Thin Copper Films

    Science.gov (United States)

    Semenov, V. A.; Oskirko, V. O.; Rabotkin, S. V.; Oskomov, K. V.; Solovyev, A. A.; Stepanov, S. A.

    2018-01-01

    The paper examines the oxidation of polycrystalline Cu films under the impact of ambient atmosphere in the course of extended time (from 20 to 90 days). It shows that in the case of 10 nm thick Cu films deposited onto the glass substrate by method of magnetron sputtering, one eventually observes the increase in transparency, surface resistance and surface roughness, as well as the decrease in reflection in the area of near infrared region. The most dramatic changes occur in films deposited in the pulse mode of sputtering with frequency of 3 kHz compared to films deposited in the direct current mode. Formation of sublayer ZnO:Al and 20 nm thick upper passivating layer ZnO:Al allows effectively preventing the oxidation of thin copper films under the impact of ambient atmosphere.

  10. Metal oxide membranes for gas separation

    Science.gov (United States)

    Anderson, Marc A.; Webster, Elizabeth T.; Xu, Qunyin

    1994-01-01

    A method for permformation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation.

  11. Magnetic correlations in doped transition metal oxides

    International Nuclear Information System (INIS)

    The authors review recent reactor- and spallation-source-based neutron scattering experiments on the magnetic fluctuations and order in a variety of doped transition metal oxides. In particular, data are shown for the NiO chain compound, Y 2-x Ca x BaNiO 5 , the two-dimensional cuprate superconductors La 2-x Sr x CuO 4 and YBa 2 Cu 3 O 6+x , and the classical three-dimensional ''Mott-Hubbard'' system V 2-y O 3

  12. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  13. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  14. Effects of metal doping on photoinduced hydrophilicity of SnO2 thin ...

    Indian Academy of Sciences (India)

    nomenon of wettability switching by UV irradiation is used in self-cleaning windows, exterior construction materials, solar cells, car mirrors, textiles.9–13 Several attempts have been made to improve the photoinduced hydrophilicity of metal oxides.14–16 The doping of metal and non-metal in metal oxides is one of the ...

  15. Flexural magneto-elastic vibrations of thin metal wires

    International Nuclear Information System (INIS)

    Lukyanov, A; Molokov, S

    2004-01-01

    Flexural vibrations of thin metal wires owing to a high, pulsed electric current have been investigated. The current is sufficiently low to inhibit melting but sufficiently high to induce stresses, leading to the wire fragmentation. The problem is treated numerically on the basis of the theory of three-dimensional linear elasticity. The model has been verified on the well-known exact, eigenmode solution for the flexural vibrations of an infinite wire. The agreement is excellent. Further, the model has been used to study vibrations owing to two sources. The first one is perturbations of wires owing to the Lorentz force leading to a kink-type instability similar to that in plasmas. As the main cause of the wire fragmentation has been previously found to be the thermal expansion of material owing to Joule heating, this problem mainly serves to compare results between the three-dimensional and the one-dimensional, thin-rod models. Comparison of the growth rate of the instability obtained by the two models has shown an excellent agreement. The second source of vibrations is the magnetic fields induced in the external electric circuit. The results show that depending on the shape of the circuit, the induced stresses may exceed 20 MPa for the aluminium wires used in the low-current experiments. Although the external fields are not the main source of the wire fragmentation, these values alone may cause the fracture process at elevated temperatures

  16. Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2015-01-01

    Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

  17. Chemical solution deposited lanthanum zirconium oxide thin films: Synthesis and chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Chen, H.S., E-mail: sean.chen@cantab.net [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Kumar, R.V.; Glowacki, B.A. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2010-07-01

    Pyrochlore lanthanum zirconium oxide (LZO) thin films textured along <4 0 0> are synthesized using lanthanum acetate hydrate, zirconium propoxide, propionic acid, acetic acid glacial, and methanol as precursors. The materials growth and chemistry are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and thermal gravimetric analysis (TGA). The formation of inkjet printed LZO films on Ni-5%W tape is found to be based on the decomposition of the LZO precursor solution. In the annealing process, Zr metal-oxides bonds are first eliminated between 150 and 250 deg. C, while carboxylates from precursors remain in LZO after the annealing carried out at 900 {sup o}C for an hour. Annealed LZO films have dense and smooth structure that are composed of nanoparticles sizing 10-15 nm and some pinholes sizing 25-35 nm accounted for less than 0.1% of the area are observed.

  18. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    OpenAIRE

    Boltz, Janika

    2011-01-01

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO2 and TiO2. In order to ach...

  19. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  20. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    Science.gov (United States)

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  1. Nanotoxicity: oxidative stress mediated toxicity of metal and metal oxide nanoparticles.

    Science.gov (United States)

    Sarkar, Abhijit; Ghosh, Manoranjan; Sil, Parames Chandra

    2014-01-01

    Metal and metal oxide nanoparticles are often used as industrial catalysts or to improve product's functional properties. Recent advanced nanotechnology have been expected to be used in various fields, ranging from sensors, environmental remediation to biomedicine, medical biology and imaging, etc. However, the growing use of nanoparticles has led to their release into environment and increased levels of these particles at nearby sites or the surroundings of their manufacturing factories become obvious. The toxicity of metal and metal oxide nanoparticles on humans, animals, and certainly to the environment has become a major concern to our community. However, controversies still remain with respect to the toxic effects and the mechanisms of these nanoparticles. The scientific community now feels that an understanding of the toxic effects is necessary to handle these nanoparticles and their use. A new discipline, named nanotoxicology, has therefore been developed that basically refers to the study of the interactions of nanoparticles with biological systems and also measures the toxicity level related to human health. Nanoparticles usually generate reactive oxygen species to a greater extent than micro-sized particles resulting in increased pro-inflammatory reactions and oxidative stress via intracellular signaling pathways. In this review, we mainly focus on the routes of exposure of some metal and metal oxide nanoparticles and how these nanoparticles affect us or broadly the cells of our organs. We would also like to discuss the responsible mechanism(s) of the nanoparticle-induced reactive oxygen species mediated organ pathophysiology. A brief introduction of the characterization and application of these nanoparticles has also been included in the article.

  2. A study on the growth mechanism and the process parameters controlling aluminum oxide thin films deposition by pulsed pressure MOCVD

    OpenAIRE

    Murthy, Hari; Miya, S. S; Krumdieck, Susan

    2016-01-01

    Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were use...

  3. Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

    Science.gov (United States)

    Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

    2017-12-01

    Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

  4. Colloquium: Excitons in atomically thin transition metal dichalcogenides

    Science.gov (United States)

    Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.; Heinz, Tony F.; Marie, Xavier; Amand, Thierry; Urbaszek, Bernhard

    2018-04-01

    Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here recent progress in understanding of the excitonic properties in monolayer TMDs is reviewed and future challenges are laid out. Discussed are the consequences of the strong direct and exchange Coulomb interaction, exciton light-matter coupling, and influence of finite carrier and electron-hole pair densities on the exciton properties in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.

  5. Decomposition of ethylene carbonate on electrodeposited metal thin film anode

    Energy Technology Data Exchange (ETDEWEB)

    Bridel, Jean-Sebastien; Grugeon, Sylvie; Laruelle, Stephane; Tarascon, Jean-Marie [Laboratoire de Reactivite et Chimie des Solides, Universite de Picardie Jules Verne CNRS (UMR-6007), Faculte des Sciences, 33 rue Saint-Leu 80039, Amiens Cedex (France); Hassoun, Jusef; Reale, Priscilla; Scrosati, Bruno [Chemistry Department, University of Rome ' ' La Sapienza' ' , 00185 Roma (Italy)

    2010-04-02

    Metals capable of forming alloys with Li are of great interest as an alternative to present carbon electrodes, hence the importance of knowing their interactions with electrolytes is necessary. Herein we report further on the high-voltage extra irreversibility of Sn electrodeposited thin films vs. Li in EC-DMC 1 M LiPF{sub 6} electrolytes. We show that this high-voltage irreversibility is strongly dependent upon the electrolyte composition as demonstrated by its disappearance in EC-free electrolytes. This finding coupled with IR spectroscopy measurements provides direct evidence for the tin-driven catalytic degradation of EC during the discharge of Sn/Li cells. From an electrochemical survey of various metals, capable of alloying with Li, we found that Bi and Pb behaved like Sn while Si and Sb did not act as catalysts towards EC degradation. A rationale for such behaviour is proposed, a procedure to bypass EC degradation with the addition of VC is presented, and an explanation for the non-observance of catalytic-driven EC degradation for Sn/C composites is provided. (author)

  6. Oxidation of vanadium metal in oxygen plasma and their characterizations

    Directory of Open Access Journals (Sweden)

    Rabindar Kumar Sharma

    2015-09-01

    Full Text Available In this report, the role of oxygen plasma on oxidation of vanadium (V metal and the volatilization of its oxides has been studied as a function of source (V metal strip temperature (Tss and oxygen partial pressure (PO2. The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2 in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5. The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500   ˚ C and 7.5 × 10−2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.

  7. Oxidation of vanadium metal in oxygen plasma and their characterizations

    Science.gov (United States)

    Sharma, Rabindar Kumar; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

    2015-09-01

    In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500 ˚ C and 7.5 × 10-2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.

  8. The role of the native oxide shell on the microwave sintering of copper metal powder compacts

    International Nuclear Information System (INIS)

    Mahmoud, Morsi M.; Link, Guido; Thumm, Manfred

    2015-01-01

    Highlights: • Thin oxide native layer had a critical role on microwave sintering of copper. • Explain why microwaves interact with copper powder differently than its bulk. • Abnormal expansion in copper is due to the plastic deformation and crack formation. • In-situ setup gives important insight about the microwave sintering of metals. • Microwave sintering is a promising candidate technology in powder metallurgy. - Abstract: Successful microwave sintering of several metal powders had been reported by many researchers with remarkable improvements in the materials properties and/or in the overall process. However, the concept behind microwave heating of metal powders has not been fully understood till now, as it is well known that bulk metals reflect microwaves. The progress of microwave sintering of copper metal powder compacts was investigated via combining both in-situ electrical resistivity and dilatometry measurements that give important information about microstructural changes with respect to the inter-particle electrical contacts during sintering. The sintering behavior of copper metal powders was depending on the type of the gas used, particle size, the initial green density, the soaking sintering time and the thin oxide layer on the particles surfaces. The thin copper oxide native layer (ceramics) that thermodynamically formed on the particles surfaces under normal handling and ambient environmental conditions had a very critical and important role in the microwave absorption and interaction, the sintering behavior and the microstructural changes. This finding could help to have a fundamental understanding of why MW’s interact with copper metal powder in a different way than its bulk at room temperature, i.e. why a given metal powder could be heated using microwaves while its bulk reflects it

  9. Development of thin film oxygen transport membranes on metallic supports

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Ye

    2012-04-25

    Asymmetric membrane structure has an attractive potential in the application of O{sub 2}/N{sub 2} gas separation membrane for the future membrane-based fossil fuel power plant using oxyfuel technology, which will reduce the carbon dioxide emission. The aim of this study is the development of a metal supported multi-layer membrane structure with a thin film top membrane layer and porous ceramic interlayers. Four perovskite materials were studied as candidate membrane materials. Material properties of these perovskite materials were investigated and compared. La{sub 0.58}Sr{sub 0.4}Co{sub 0.2}Fe{sub 0.8}O{sub 3-{delta}} (LSCF58428) showed sufficient oxygen permeability, an acceptable thermal expansion coefficient and a moderate sintering temperature. Alternatively, Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} (BSCF5582) is considered obtaining very high oxygen permeability but a higher thermal expansion and a lower thermal stability than LSCF58428. Four different Ni-based alloys were studied as candidate substrate materials in the asymmetric membrane structure. The chromia-scale alloys (Hastelloy X, Inconel 600 and Haynes 214) caused Cr poisoning of the membrane layer material LSCF58428 during high-temperature co-firing in air. NiCoCrAlY with a high Al content (12.7 wt%) was found to be the most promising substrate material. It showed a good chemical compatibility with perovskite materials at high temperatures. In order to bridge the highly porous substrate and the thin top membrane layer interlayers were developed. Two interlayers were coated by screen printing on the porous NiCoCrAlY substrate which was sintered at 1225 C in flowing H{sub 2} atmosphere. Screen printing pastes were optimized by investigating various solvent and binder combinations and various ceramic powder contents. The first interlayer significantly improved the surface quality and the surface pore size has been reduced from 30-50{mu}m on the substrate to few {mu}m on the first

  10. Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

    Science.gov (United States)

    Barquinha, Pedro Miguel Candido

    This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to

  11. Role of temperature and energy density in the pulsed laser deposition of zirconium oxide thin film

    International Nuclear Information System (INIS)

    Mittra, Joy; Abraham, G.J.; Viswanadham, C.S.; Kulkarni, U.D.; Dey, G.K.

    2011-01-01

    Present work brings out the effects of energy density and substrate temperature on pulsed laser deposition of zirconium oxide thin film on Zr-base alloy substrates. The ablation of sintered zirconia has been carried out using a KrF excimer laser having 30 ns pulse width and 600 mJ energy at source at 10 Hz repetition rate. To comprehend effects of these parameters on the synthesized thin film, pure zirconia substrate has been ablated at two different energy densities, 2 J.cm -2 and 5 J.cm -2 , keeping the substrate at 300 K, 573 K and 873 K, respectively. After visual observation, deposited thin films have been examined using Raman Spectroscopy (RS) and X-ray Photo-electron Spectroscopy (XPS). It has been found that the oxide deposited at 300 K temperature does not show good adherence with the substrate and deteriorates further with the reduction in energy density of the incident laser. The oxide films, deposited at 573 K and 873 K, have been found to be adherent with the substrate and appear lustrous black. These indicate that the threshold for adherence of the zirconia film on the Zr-base alloy substrate lies in between 300 K and 573 K. Analysis of Raman spectra has indicated that thin films of zirconia, deposited using pulsed laser, on the Zr-base metallic substrate are initially in amorphous state. Experimental evidence has indicated a strong link among the degree of crystallinity of the deposited oxide film, the substrate temperature and the energy density. It also has shown that the crystallization of the oxide film is dependent on the substrate temperature and the duration of holding at high temperature. The O:Zr ratios of the films, analyzed from the XPS data, have been found to be close to but less than 2. This appears to explain the reason for the transformation of amorphous oxide into monoclinic and tetragonal phases, below 573 K, and not into cubic phase, which is reported to be more oxygen deficient. (author)

  12. An improved method of preparation of nanoparticular metal oxide catalysts

    DEFF Research Database (Denmark)

    2014-01-01

    The present invention concerns an improved method of preparation of nanoparticular vanadium oxide/anatase titania catalysts having a narrow particle size distribution. In particular, the invention concerns preparation of nanoparticular vanadium oxide/anatase titania catalyst precursors comprising...... combustible crystallization seeds upon which the catalyst metal oxide is coprecipitated with the carrier metal oxide, which crystallization seeds are removed by combustion in a final calcining step....

  13. Sol-Gel/Hydrothermal Synthesis of Mixed Metal Oxide

    African Journals Online (AJOL)

    Mixed metal oxides of titanium and zinc nanocomposites were prepared through sol-gel method under hydrothermal condition ... Keywords: Nanocomposites, Titanium dioxide, Zinc oxide, Particle sizes, Optical property, X-Ray Diffraction. ABSTRACT. 321 ... doping with other semiconductors like zinc oxide, aluminium oxide ...

  14. Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

    International Nuclear Information System (INIS)

    Bain, R.J.P.; Donaldson, G.B.

    1985-01-01

    We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

  15. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  16. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  17. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    International Nuclear Information System (INIS)

    Kim, Sang Woo; Yoon, Chong S.

    2007-01-01

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

  18. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal-semiconductor-metal Schottky photodiodes

    Science.gov (United States)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-01

    Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  19. Femtosecond laser surface structuring and oxidation of chromium thin coatings: Black chromium

    Energy Technology Data Exchange (ETDEWEB)

    Kotsedi, L., E-mail: Kotsedi@tlabs.ac.za [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Nuru, Z.Y. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Mthunzi, P. [National Laser Centre, Council for Scientific and Industrial Research, 0001 Pretoria (South Africa); Muller, T.F.G. [University of the Western Cape, Physics Department, Bellville, 7535 Cape Town (South Africa); Eaton, S.M. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Julies, B. [University of the Western Cape, Physics Department, Bellville, 7535 Cape Town (South Africa); Manikandan, E. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa); Ramponi, R. [Physics Department, Politecnico di Milano, Piazza Leonardo Da Vinci, 32, 20133 Milano (Italy); Maaza, M. [UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria (South Africa); Nanosciences African Network (NANOAFNET), iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, P.O. Box 722, Somerset West, Western Cape (South Africa)

    2014-12-01

    Highlights: • Oxidation of the chromium thin film to chromium oxide by femtosecond laser with a fundamental wavelength of 1064 nm. • Solar absorber from chromium oxide that low percentage reflectance. • Femtosecond laser oxidation, with a de-focused laser. • Chromium oxide formation by femtosecond laser in normal ambient. - Abstract: In view of their potential applications as selective solar absorbers, chromium coatings on float glass substrates were nano/micro structured by femtosecond laser in air. Raman and X-rays diffraction investigations confirmed the formation of an ultra-porous α-Cr{sub 2}O{sub 3} layer at the surface; higher is the input laser power, enhanced is the crystallinity of the α-Cr{sub 2}O{sub 3} layer. The α-Cr{sub 2}O{sub 3} layer with the Cr underneath it in addition to the photo-induced porosity acted as a classical ceramic–metal nano-composite making the reflectance to decrease significantly within the spectral range of 190–1100 nm. The average reflectance decreased from 70 to 2%.

  20. Retardation-enhanced van der Waals force between thin metal films

    OpenAIRE

    Boström, Mathias; Sernelius, Bo

    2000-01-01

    We recently investigated the van der Waals force between thin metal films. Under certain conditions this force decrease with separation to a fractional power. In the present work we use optical data of metals and the zero-temperature Lifshitz formalism to demonstrate a retardation effect. The retarded attraction between thin metal films may be larger than the nonretarded attraction. This property is related to a comparatively weak retardation dependence of the energy that originates from the ...

  1. Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.

    Science.gov (United States)

    Khare, Amit; Shin, Dongwon; Yoo, Tae Sup; Kim, Minu; Kang, Tae Dong; Lee, Jaekwang; Roh, Seulki; Jung, In-Ho; Hwang, Jungseek; Kim, Sung Wng; Noh, Tae Won; Ohta, Hiromichi; Choi, Woo Seok

    2017-10-01

    Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO x epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation. Using real-time optical spectroscopy, the phase transition between the two structurally distinct phases (i.e., brownmillerite and perovskite) is quantitatively monitored, and a pressure-temperature phase diagram of the topotactic transformation is constructed for the first time. The transformation at relatively low temperatures is attributed to a markedly small difference in Gibbs free energy compared to the known similar class of materials to date. This study highlights the phase stability and reversibility of SrFeO x thin films, which is highly relevant for energy and environmental applications exploiting the redox reactions. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Preventing Oxide Adhesion of Liquid Metal Alloys to Enable Actuation in Microfluidic Systems

    Science.gov (United States)

    Joshipura, Ishan; Johnson, Alexander; Ayers, Hudson; Dickey, Michael

    This work explores the wetting behavior of an oxide-coated liquid metal, eutectic alloy of gallium and indium (`EGaIn'), which remains a liquid at room temperature. Liquid metals uniquely combine fluidity with metallic properties. Combined, these properties enable soft, stretchable, and shape reconfigurable electronics with `softer than skin' interfaces. Ga forms spontaneously a thin surface oxide that alters its wetting behavior and makes it difficult to move across surfaces without leaving residue behind. We examine the effects of surface roughness (i.e., Cassie-Baxter state) and lubrication to minimize adhesion of Ga oxide to surfaces. Lubricated surfaces create a `slip-layer' of liquid between the metal and surface that also inhibits wetting. This slip layer allows the metal to move reversibly through microchannels by preventing adhesion of the oxide. The metal may be pumped or moved by using low voltages or pneumatic actuation. Optical microscopy confirms the importance of the slip-layer, which enables non-stick motion of the metal through capillaries. Finally, electrochemical impedance spectroscopy characterizes the electrohydrodynanic motion of EGaIn in capillary systems.

  3. Biomedical Detection via Macro- and Nano-Sensors Fabricated with Metallic and Semiconducting Oxides

    Science.gov (United States)

    Hahm, Jong-In

    2013-01-01

    Originally developed as gas sensors, the benefits of metallic and semiconducting oxide materials are now being realized in other areas of sensing, such as chemical, environmental, and biomedical monitoring and detection. Metallic and semiconducting oxides have continuously expanded their roles to date, and have also established their significance in biosensing by utilizing a variety of modes for signal generation and detection mechanism. These sensors are typically based either on their optical, electrochemical, electrical, gravimetric, acoustic, and magnetic properties for signal transduction. This article reviews such biosensors that employ metallic and semiconducting oxides as active sensing elements to detect nucleic acids, proteins, cells, and a variety of important biomarkers, both in thin film and one-dimensional forms. Specific oxide materials (Mx Oy ) examined comprehensively in this article include M = Fe, Cu, Si, Zn, Sn, In. The derivatives of these oxide materials resulting from incorporation of dopants are examined as well. The crystalline structures and unique properties that may be exploited for various biosensing applications are discussed, and recent efforts investigating the feasibility of using these oxide materials in biosensor technology are described. Key biosensor characteristics resulting from reduced dimensionality are overviewed under the motif of planar and one-dimensional sensors. This article also provides insight into current challenges facing biosensor applications for metallic and semiconducting oxides. In addition, future outlook in this particular field as well as different impacts on biology and medicine are addressed. PMID:23627064

  4. Oxide Thin-Film Electronics using All-MXene Electrical Contacts

    KAUST Repository

    Wang, Zhenwei

    2018-02-23

    2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

  5. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Xu, E-mail: GAO.Xu@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito, E-mail: GAO.Xu@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  6. Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

    Science.gov (United States)

    Nayak, Manish Kumar; Esther, A. Carmel Mary; Bera, Parthasarathi; Dey, Arjun

    2017-09-01

    A single layer antireflective, smart, crystalline and nanocolumnar pulsed RF magnetron sputtered vanadium oxide-molybdenum oxide thin film on silicon is proposed for the alternate antireflective material for silicon based futuristic solar cell application. The VO-MO film with 130 nm thickness grown at 200 W shows significant low reflectance (1% within the 500-600 nm region). The VO-MO film with lowest reflectance shows a phase transition at around 55 °C which is beneficial due to film inherent variable IR emittance behaviour which may be helpful for eliminating excess heat load generated during in-service of silicon solar cell.

  7. Nanostructure of aluminium (Al) - Doped zinc oxide (AZO) thin films

    Science.gov (United States)

    Hussin, Rosniza; Husin, M. Asri

    2017-12-01

    Aluminium (Al)-doped Zinc Oxide (ZnO) was deposited on glass substrates by using the sol-gel dip coating technique. Next, AZO sol-gel solution was produced via sol-gel method. Al was used as doped element with molar ratios of 1%, 2%, and 3%, while the calcination temperatures were set at 400°C, 500°C, and 600°C for 2 hours. In fact, characterization was carried out in order to determine the effect of calcination temperature and molar ratio of doping by using several techniques, such as X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), and Ultraviolet-Visible spectroscopy (UV-Vis). XRD was performed to investigate the crystal structure in which the ZnO was in wurtzite hexagonal form. Next, Energy Dispersive Spectroscopy (EDS) was used to determine the composition of thin films where the result revealed the existence of zinc, oxygen, and aluminium. The roughness of the deposited film was later measured by using the AFM approach where the findings indicated increment in RMS from 8.496 nm to 35.883 nm as the temperature was increased. Additionally, FESEM was carried out to look into the microstructure surfaces of the deposited AZO thin film for increased temperature caused the particle to grow bigger for all molar ratio of dopant. Lastly, UV-Vis was conducted to study the optical properties of AZO, in which the result demonstrated that AZO thin film possessed the highest transmittance percentage among all samples above 90% with band gap value that ranged from 3.25 eV to 3.32 eV.

  8. Metal Oxide Nanoparticle Photoresists for EUV Patterning

    KAUST Repository

    Jiang, Jing

    2014-01-01

    © 2014SPST. Previous studies of methacrylate based nanoparticle have demonstrated the excellent pattern forming capability of these hybrid materials when used as photoresists under 13.5 nm EUV exposure. HfO2 and ZrO2 methacrylate resists have achieved high resolution (∼22 nm) at a very high EUV sensitivity (4.2 mJ/cm2). Further investigations into the patterning process suggests a ligand displacement mechanism, wherein, any combination of a metal oxide with the correct ligand could generate patterns in the presence of the suitable photoactive compound. The current investigation extends this study by developing new nanoparticle compositions with transdimethylacrylic acid and o-toluic acid ligands. This study describes their synthesis and patterning performance under 248 nm KrF laser (DUV) and also under 13.5 nm EUV exposures (dimethylacrylate nanoparticles) for the new resist compositions.

  9. Organic thin film transistors with indium tin oxide bottom electrode

    International Nuclear Information System (INIS)

    Han, Chang-Wook; Shin, Hee-Sun; Park, Joong-Hyun; Han, Min-Koo; Pang, Hee-Suk; Kim, Ki-Yong; Chung, In-Jae; Pyo, Sang-Woo; Lee, Dong-Hyun; Kim, Young-Kwan

    2006-01-01

    Organic thin film transistors (OTFTs) which employ indium tin oxide (ITO) as source and drain electrodes instead of gold are fabricated. A double gate dielectric layer was used, which consists of benzocyclobutane (BCB) and silicon nitride (SiN x ). The pentacene TFT has lateral dimensions 192 μmx6 μm. The OTFT with the ITO bottom electrode shows a saturation mobility of 0.05∼0.09 cm 2 V -1 s -1 and an on-off current ratio of the order of 10 5 in a gate voltage span between 0 and -40 V. The TFT fabrication process steps had the beneficial side effect of changing the ITO surface from hydrophilic to hydrophobic. This change allows pentacene films with larger grains, observed up to 0.5 μm, to be grown on TFT compared to as-deposited ITO film onto which high quality films cannot be grown

  10. Sputtered boron indium oxide thin-film transistors

    Science.gov (United States)

    Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

    2017-11-01

    Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

  11. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  12. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  13. Electrochromics for smart windows: Oxide-based thin films and devices

    Energy Technology Data Exchange (ETDEWEB)

    Granqvist, Claes G.

    2014-08-01

    possibilities to accomplish further porosity by having suitable thin-film deposition parameters. A number of examples on the importance of the detailed deposition conditions are presented, and Section 4 ends with a presentation of the EC properties of films with compositions across the full tungsten–nickel oxide system. Section 5 is devoted to transparent electrical conductors and electrolytes, both of which are necessary in EC devices. Detailed surveys are given of transparent conductors comprising doped-oxide semiconductors, coinage metals, nanowire meshes and other alternatives, and also of electrolytes based on thin films and on polymers. Particular attention is devoted to electrolyte functionalization by nanoparticles. Section 6 considers one particular device construction: A foil that is suitable for glass lamination and which, in the author's view, holds particular promise for low-cost large-area implementation of EC smart windows. Device data are presented, and a discussion is given of quality assessment by use of 1/f noise. The “battery-type” EC device covered in the major part of this critical review is not the only alternative, and Section 7 consists of brief discussions of a number of more or less advanced alternatives such as metal hydrides, suspended particle devices, polymer-dispersed liquid crystals, reversible electroplating, and plasmonic electrochromism based on transparent conducting oxide nanoparticles. Finally, Section 8 provides a brief summary and outlook. The aim of this critical review is not only to paint a picture of the state-of-the-art for electrochromics and its applications in smart windows, but also to provide ample references to current literature of particular relevance and thereby, hopefully, an easy entrance to the research field. - Highlights: • Critical review of electrochromic oxide thin films and devices. • Variable transmittance of visible light and solar energy. • Fenestration in energy efficient buildings.

  14. Electrochromics for smart windows: Oxide-based thin films and devices

    International Nuclear Information System (INIS)

    Granqvist, Claes G.

    2014-01-01

    possibilities to accomplish further porosity by having suitable thin-film deposition parameters. A number of examples on the importance of the detailed deposition conditions are presented, and Section 4 ends with a presentation of the EC properties of films with compositions across the full tungsten–nickel oxide system. Section 5 is devoted to transparent electrical conductors and electrolytes, both of which are necessary in EC devices. Detailed surveys are given of transparent conductors comprising doped-oxide semiconductors, coinage metals, nanowire meshes and other alternatives, and also of electrolytes based on thin films and on polymers. Particular attention is devoted to electrolyte functionalization by nanoparticles. Section 6 considers one particular device construction: A foil that is suitable for glass lamination and which, in the author's view, holds particular promise for low-cost large-area implementation of EC smart windows. Device data are presented, and a discussion is given of quality assessment by use of 1/f noise. The “battery-type” EC device covered in the major part of this critical review is not the only alternative, and Section 7 consists of brief discussions of a number of more or less advanced alternatives such as metal hydrides, suspended particle devices, polymer-dispersed liquid crystals, reversible electroplating, and plasmonic electrochromism based on transparent conducting oxide nanoparticles. Finally, Section 8 provides a brief summary and outlook. The aim of this critical review is not only to paint a picture of the state-of-the-art for electrochromics and its applications in smart windows, but also to provide ample references to current literature of particular relevance and thereby, hopefully, an easy entrance to the research field. - Highlights: • Critical review of electrochromic oxide thin films and devices. • Variable transmittance of visible light and solar energy. • Fenestration in energy efficient buildings

  15. Reduction of Injection Pressure for Thin Walled Molding using the Laser Metal Sintered Mold

    OpenAIRE

    米山, 猛; 内藤, 圭亮; 阿部, 諭; 宮丸, 充

    2010-01-01

    Using milling combined laser metal sintering, porous surface has been fabricated on the thin walled cavity closed by the surrounded thick cavity in the injection mold. Resin flows into the cavity of 2mm thick at first around the thin part and then flows into the thin cavity of 0.2mm thick with 11mm square by packing pressure. The packing pressure for filling the thin part was compared among laser metal sintered mold with or without porous surface, steel mold with or without porous block. The ...

  16. Water Splitting by Thin Film Metal-Oxo Catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Nocera, Daniel [Harvard Univ., Cambridge, MA (United States)

    2013-03-15

    The dropping price of silicon photovoltaics in the United States is causing load defection to solar supply at an accelerated pace. This conversion to solar and, more generally, other renewable energy sources has accordingly turned the energy research focus from generation to one of storage. Truly disruptive improvements in energy storage technologies are limited by energy density. This limitation, however, does not apply to fuels, which possess the energy density needed for large-scale energy storage. The first step of the basic science needed to drive such historic restructuring of the U.S. energy infrastructure begins with the solar-driven generation of hydrogen and oxygen from water. The solar-produced hydrogen may then be combined with carbon dioxide to deliver any number of fuels. Obviously, light does not directly act on water to engender its splitting into its elemental components. Hence, catalysts are needed to drive the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). Of these two reactions, the four-electron, four-proton oxidation of OER is the more kinetically challenging reaction, and therefore the development of energy efficient solar fuels processes demands that OER be accomplished at a minimal overpotential. The research completed in this program developed catalysts that drive OER and at the same time meet the important criteria of (1) using non-critical materials that (2) are easy to assemble and (3) accomplish OER under simple conditions. Research was designed to uncover the chemical principles that underlie the self-assembly of metal oxide oxygen evolving catalysts (M-OEC) from the metals of M = Mn, Co, and Ni. For example, a dogma of heterogeneous catalysis of any sort is that “edges” matter in promoting catalytic transformations. We provided a rationale for such dogma by showing that the OER in Co-OEC occurred at a dimensionally reduced dicobalt edge site. Edge site reactivity was clearly revealed analyzing 18O labeled

  17. Synthesis and characterization of metal oxide nanorod brushes

    Indian Academy of Sciences (India)

    WINTEC

    ducing chromium ions during the synthesis of alumina rods. Keywords. Metal oxide nanorods; nanorod brushes; alumina nanorods; MoO3 nanorods; ZnO nanorods; ruby nanorods. 1. Introduction. Synthesis of one-dimensional metal oxide nanostructures is getting enormous attention in recent years due to their potential ...

  18. Recent Development in Metal Oxides and Related Materials

    Indian Academy of Sciences (India)

    Unknown

    Recent Development in Metal Oxides and. Related Materials. FOREWORD. This special issue of the Journal of Chemical Sciences contains a col- lection of articles contributed by the participants of Recent Development in Metal Oxides ... energy transfer, nano particle synthesis, magnetic transport properties of rare earth ...

  19. A novel parameter estimation method for metal oxide surge arrester ...

    Indian Academy of Sciences (India)

    with experimental results. Keywords. Metal oxide surge arrester models; PSO; ACO; parameter estimation;. EMTP. 1. Introduction. Metal oxide (MO) surge arresters are widely used as protective devices against switching and lightning over-voltages in power systems. The proper nonlinear voltage-current characteristics,. ∗.

  20. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  1. Guiding spoof surface plasmon polaritons by infinitely thin grooved metal strip

    Directory of Open Access Journals (Sweden)

    Xiang Wan

    2014-04-01

    Full Text Available In this paper, the propagation characteristics of spoof surface plasmon polaritons (SPPs on infinitely thin corrugated metal strips are theoretically analyzed. Compared with the situations of infinitely thick lateral thickness, the infinitely thin lateral thickness leads to lower plasma frequency according to the analyses. The propagation lengths and the binding capacity of the spoof SPPs are evaluated based on the derived dispersion equation. The effects of different lateral thicknesses are also investigated. At the end, a surface wave splitter is presented using infinitely thin corrugated metal strip. Other functional planar or flexible devices can also be designed using these metal strips in microwave or terahertz regimes.

  2. Stabilization of electrocatalytic metal nanoparticles at metal-metal oxide-graphene triple junction points.

    Science.gov (United States)

    Kou, Rong; Shao, Yuyan; Mei, Donghai; Nie, Zimin; Wang, Donghai; Wang, Chongmin; Viswanathan, Vilayanur V; Park, Sehkyu; Aksay, Ilhan A; Lin, Yuehe; Wang, Yong; Liu, Jun

    2011-03-02

    Carbon-supported precious metal catalysts are widely used in heterogeneous catalysis and electrocatalysis, and enhancement of catalyst dispersion and stability by controlling the interfacial structure is highly desired. Here we report a new method to deposit metal oxides and metal nanoparticles on graphene and form stable metal-metal oxide-graphene triple junctions for electrocatalysis applications. We first synthesize indium tin oxide (ITO) nanocrystals directly on functionalized graphene sheets, forming an ITO-graphene hybrid. Platinum nanoparticles are then deposited, forming a unique triple-junction structure (Pt-ITO-graphene). Our experimental work and periodic density functional theory (DFT) calculations show that the supported Pt nanoparticles are more stable at the Pt-ITO-graphene triple junctions. Furthermore, DFT calculations suggest that the defects and functional groups on graphene also play an important role in stabilizing the catalysts. These new catalyst materials were tested for oxygen reduction for potential applications in polymer electrolyte membrane fuel cells, and they exhibited greatly enhanced stability and activity.

  3. Laboratory studies of refractory metal oxide smokes

    International Nuclear Information System (INIS)

    Nuth, J.A.; Nelson, R.N.; Donn, B.

    1989-01-01

    Studies of the properties of refractory metal oxide smokes condensed from a gas containing various combinations of SiH4, Fe(CO)5, Al(CH3)3, TiCl4, O2 and N2O in a hydrogen carrier stream at 500 K greater than T greater than 1500 K were performed. Ultraviolet, visible and infrared spectra of pure, amorphous SiO(x), FeO(x), AlO(x) and TiO(x) smokes are discussed, as well as the spectra of various co-condensed amorphous oxides, such as FE(x)SiO(y) or Fe(x)AlO(y). Preliminary studies of the changes induced in the infrared spectra of iron-containing oxide smokes by vacuum thermal annealing suggest that such materials become increasingly opaque in the near infrared with increased processing: hydration may have the opposite effect. More work on the processing of these materials is required to confirm such a trend: this work is currently in progress. Preliminary studies of the ultraviolet spectra of amorphous Si2O3 and MgSiO(x) smokes revealed no interesting features in the region from 200 to 300 nm. Studies of the ultraviolet spectra of both amorphous, hydrated and annealed SiO(x), TiO(x), AlO(x) and FeO(x) smokes are currently in progress. Finally, data on the oxygen isotopic composition of the smokes produced in the experiments are presented, which indicate that the oxygen becomes isotopically fractionated during grain condensation. Oxygen in the grains is as much as 3 percent per amu lighter than the oxygen in the original gas stream. The authors are currently conducting experiments to understand the mechanism by which fractionation occurs

  4. Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

    International Nuclear Information System (INIS)

    Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

    2015-01-01

    Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered

  5. Depth resolved Doppler broadening spectroscopy in thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Reiner, Markus; Pikart, Philip; Hugenschmidt, Christoph [ZWE FRM 2, Garching (Germany); Technische Universitaet Muenchen, Physikdepartment E 21, Garching (Germany)

    2011-07-01

    Within this contribution the examination of thin metallic films by (C)DB ((coincident) Doppler broadening) measurements at different temperatures is presented. Systems with a gold or copper layer with a thickness between 20 and 500 nm were produced by evaporation deposition on silicon substrates. Doppler broadening and positronium fraction were examined in order to investigate annealing processes. In addition, theses samples as well as gold-copper-silicon systems were studied by depth resolved CDB measurements with the goal to obtain information about temperature dependent diffusion processes at the interface. These measurements were performed by use of the highly intensive positron beam NEPOMUC. Depth resolved DB measurements are used for the determination of the positron diffusion length which is highly sensitive to defect concentration. At high temperatures the thermic desorption of positronium can be detected and additionally considered to determine the diffusion length. Depth resolved CDB measurements allow the detection of the chemical surrounding of defects in layered structures. Recently a new heatable sample holder has been set up in order to achieve a sample temperature up to 1000 K.

  6. The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Friederike

    2007-11-19

    This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

  7. Modulation of physical properties of oxide thin films by multiple fields

    Science.gov (United States)

    Hua-Li, Yang; Bao-Min, Wang; Xiao-Jian, Zhu; Jie, Shang; Bin, Chen; Run-Wei, Li

    2016-06-01

    Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices. Project supported by the State Key Project of Fundamental Research of China (Grant No. 2012CB933004), the National Natural Science Foundation of China (Grant Nos. 11474295, 51571208, 51525103, and 11274322), Overseas, Hong Kong & Macao Scholars Collaborated Researching Fund (Grant No. 51428201), the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201327), Ningbo Major Project for Science and Technology (Grant No. 2014B11011), Ningbo International Cooperation Projects (Grant Nos. 2012D10018 and 2014D10005), the Fund for Ningbo Science and Technology Innovation Team (Grant No. 2015B11001), the Youth Innovation Promotion Association of the Chinese Academy of Sciences, and the Key Research Program of the Chinese Academy of Sciences (Grant No. KJZD-EW-M05).

  8. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    International Nuclear Information System (INIS)

    Richard T. Scalettar; Warren E. Pickett

    2005-01-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals

  9. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Scalettar, Richard T.; Pickett, Warren E.

    2004-07-01

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (1) Mott transitions in transition metal oxides, (2) magnetism in half-metallic compounds, and (3) large volume-collapse transitions in f-band metals.

  10. High-Pressure Thermodynamic Properties of f-electron Metals, Transition Metal Oxides, and Half-Metallic Magnets

    Energy Technology Data Exchange (ETDEWEB)

    Richard T. Scalettar; Warren E. Pickett

    2005-08-02

    This project involves research into the thermodynamic properties of f-electron metals, transition metal oxides, and half-metallic magnets at high pressure. These materials are ones in which the changing importance of electron-electron interactions as the distance between atoms is varied can tune the system through phase transitions from localized to delocalized electrons, from screened to unscreened magnetic moments, and from normal metal to one in which only a single spin specie can conduct. Three main thrusts are being pursued: (i) Mott transitions in transition metal oxides, (ii) magnetism in half-metallic compounds, and (iii) large volume-collapse transitions in f-band metals.

  11. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  12. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  13. Miscibility and oxidation rate of the simulated metallic spent fuel

    Energy Technology Data Exchange (ETDEWEB)

    You, K. S.; Joo, J. S.; Shin, Y. J.; Oh, S. C. [KAERI, Taejon (Korea, Republic of)

    1999-10-01

    The simulated metallic spent fuel was fabricated by using Uranium, Neodymium and Palladium in order to study the miscibility of Neodymium and Palladium with Uranium. For analysis of long-term safty on the metallized spent fuel, the simulated metallic spent fuel was oxidized under pure oxygen environment at 183{approx}250 deg C. From the results, the oxidation rate correlation and activation energy were obtained.

  14. Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

    OpenAIRE

    Wheeler, Damon Andreas

    2013-01-01

    SYNTHESIS, CHARACTERIZATION, AND ULTRAFAST DYNAMICS OF METAL, METAL OXIDE, AND SEMICONDUCTOR NANOMATERIALSABSTRACTThe optical properties of each of the three main classes of inorganic nanomaterials, metals, metal oxides, and semiconductors differ greatly due to the intrinsically different nature of the materials. These optical properties are among the most fascinating and useful aspects of nanomaterials with applications spanning cancer treatment, sensors, lasers, and solar cells. One techn...

  15. Persistent semi-metal-like nature of epitaxial perovskite CaIrO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Abhijit; Jeong, Yoon Hee, E-mail: yhj@postech.ac.kr [Department of Physics, POSTECH, Pohang 790-784 (Korea, Republic of)

    2015-05-21

    Strong spin-orbit coupled 5d transition metal based ABO{sub 3} oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO{sub 3}. Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO{sub 3} thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics.

  16. Catalysis using hydrous metal oxide ion exchanges

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.; Stohl, Frances V.

    1985-01-01

    In a process which is catalyzed by a catalyst comprising an active metal on a carrier, said metal being active as a catalyst for the process, an improvement is provided wherein the catalyst is a hydrous, alkali metal or alkaline earth metal titanate, zirconate, niobate or tantalate wherein alkali or alkaline earth metal cations have been exchanged with a catalytically effective amount of cations of said metal.

  17. PHYSICAL BASES OF SYSTEMS CREATION FOR MAGNETIC-IMPULSIVE ATTRACTION OF THIN-WALLED SHEET METALS

    Directory of Open Access Journals (Sweden)

    Y. Batygin

    2009-01-01

    Full Text Available The work is dedicated to the physical base of systems creating for the thin-walled sheet metals magnetic pulse attraction. Some practical realization models of the author’s suggestions are represented.

  18. Preparation and characterization of several transition metal oxides

    International Nuclear Information System (INIS)

    Wold, A.; Dwight, K.

    1989-01-01

    The structure-property relationships of several conducting transition metal oxides, as well as their preparative methods, are presented in this paper. The importance of preparing homogeneous phases with precisely known stoichiometry is emphasized. A comparison is also made of the various techniques used to prepare both polycrystalline and single crystal samples. For transition metal oxides, the metallic properties are discussed either in terms of metal-metal distances which are short enough to result in metallic behavior, or in terms of the formation of a π* conduction band resulting from covalent metal-oxygen interactions. Metallic behavior is observed when the conduction bands are populated with either electrons or holes. The concentration of these carriers can be affected by either cation or anion substitutions. The discussion in this presentation will be limited to the elements Re, Ti, V, Cr, Mo, and Cu

  19. The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Chun-Huei Tsau

    2015-01-01

    Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

  20. Using thin metal layers on composite structures for shielding the electromagnetic pulse caused by nearby lightning

    NARCIS (Netherlands)

    Blaj, M.A.; Buesink, Frederik Johannes Karel; Damstra, G.C.; Leferink, Frank Bernardus Johannes

    2011-01-01

    Electronic systems in composite structures could be vulnerable to the (dominant magnetic) field caused by a lightning strike, because only thin layers of metal can be used on composite structures. Thin layers result in a very low shielding effectiveness against magnetic fields. Many experiments

  1. Method for converting uranium oxides to uranium metal

    International Nuclear Information System (INIS)

    Duerksen, W.K.

    1988-01-01

    A method for converting uranium oxide to uranium metal is described comprising the steps of heating uranium oxide in the presence of a reducing agent to a temperature sufficient to reduce the uranium oxide to uranium metal and form a heterogeneous mixture of a uranium metal product and oxide by-products, heating the mixture in a hydrogen atmosphere at a temperature sufficient to convert uranium metal in the mixture to uranium hydride, cooling the resulting uranium hydride-containing mixture to a temperature sufficient to produce a ferromagnetic transition in the uranium hydride, magnetically separating the cooled uranium hydride from the mixture, and thereafter heating the separated uranium hydride in an inert atmosphere to a temperature sufficient to convert the uranium hydride to uranium metal

  2. Method and apparatus for the production of metal oxide powder

    Science.gov (United States)

    Harris, Michael T.; Scott, Timothy C.; Byers, Charles H.

    1992-01-01

    The present invention provides a method for preparing metal oxide powder. A first solution, which is substantially organic, is prepared. A second solution, which is an aqueous solution substantially immiscible in the first solution, is prepared and delivered as drops to the first solution. The drops of the second solution are atomized by a pulsed electric field forming micro-drops of the second solution. Reagents in the first solution diffuse into and react with reactants in the micro-drops of the second solution forming metal hydroxide or oxalate particles. The metal hydroxide or metal oxalate particles are then recovered and dried to produce the metal oxide powder. An apparatus for preparing a metal oxide powder is also disclosed.

  3. Characteristics of tin oxide-based thin film transistors prepared by DC magnetron sputtering.

    Science.gov (United States)

    Moon, Yeon-Keon; Kim, Woong-Sun; Kim, Kyung-Taek; Shin, Se-Young; Park, Jong-Wan

    2012-04-01

    Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.

  4. Increasing the solar cell power output by coating with transition metal-oxide nanorods

    International Nuclear Information System (INIS)

    Kuznetsov, I.A.; Greenfield, M.J.; Mehta, Y.U.; Merchan-Merchan, W.; Salkar, G.; Saveliev, A.V.

    2011-01-01

    Highlights: → Nanoparticles enhance solar cell efficiency. → Solar cell power increase by nanorod coating. → Metal-oxide nanorods are prepared in flames. → Molybdenum oxide nanorods effectively scatter light on solar cell surface. → Scattering efficiency depends on coating density. -- Abstract: Photovoltaic cells produce electric current through interactions among photons from an ambient light source and electrons in the semiconductor layer of the cell. However, much of the light incident on the panel is reflected or absorbed without inducing the photovoltaic effect. Transition metal-oxide nanoparticles, an inexpensive product of a process called flame synthesis, can cause scattering of light. Scattering can redirect photon flux, increasing the fraction of light absorbed in the thin active layer of silicon solar cells. This research aims to demonstrate that the application of transition metal-oxide nanorods to the surface of silicon solar panels can enhance the power output of the panels. Several solar panels were coated with a nanoparticle-methanol suspension, and the power outputs of the panels before and after the treatment were compared. The results demonstrate an increase in power output of up to 5% after the treatment. The presence of metal-oxide nanorods on the surface of the coated solar cells is confirmed by electron microscopy.

  5. Photocatalysis of Modified Transition Metal Oxide Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Batzill, Matthias

    2018-02-28

    The goal of this project has been to establish a cause-effect relationship for photocatalytic activity variations of different structures of the same material; and furthermore gain fundamental understanding on modification of photocatalysts by compositional or surface modifications. The reasoning is that gaining atomic scale understanding of how surface and bulk modifications alter the photo reactivity will lead to design principles for next generation photocatalysts. As a prototypical photocatalyst the research focused on TiO2 synthesized in well-defined single crystalline form to enable fundamental characterizations.We have obtained results in the following areas: (a) Preparation of epitaxial anataseTiO2 samples by pulsed laser deposition. (b) Comparison of hydrogen diffusion on different crystallographic surface. (c) Determining the stability of the TiO2(011)-2x1 reconstruction upon interactions with adsorbates. (d) Characterization of adsorption and (thermal and photo) reaction of molecules with nitro-endgroups, (e) Exploring the possibility of modifying planar model photocatalyst surfaces with graphene to enable fundamental studies on reported enhanced photocatalytic activities of graphene modified transition metal oxides, (f) gained fundamental understanding on the role of crystallographic polymorphs of the same material for their photocatalytic activities.

  6. Preparation of SrIrO{sub 3} thin films by using metal-organic aerosol deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Esser, Sebastian; Schneider, Melanie; Moshnyaga, Vasily; Gegenwart, Philipp [1. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-07-01

    The interplay between spin-orbit coupling and electronic correlations could lead to interesting novel states in iridium oxide materials. We focus on the perovskite phase of SrIrO{sub 3} because Moon et al. [1] showed by using optical spectroscopy and first-principles calculations that the last member of the Ruddlesden-Popper series Sr{sub n+1}Ir{sub n}O{sub 3n+1} (n = ∞) is close to the Mott transition. By using metal-organic aerosol deposition technique we have grown SrIrO{sub 3} thin films on (111)-oriented SrTiO{sub 3} substrates. The cubic symmetry of the SrTiO{sub 3} substrate ensured that the SrIrO{sub 3} thin film grew in the monoclinic perovskite phase. The X-ray diffraction results suggest that SrIrO{sub 3} thin films in perovskite structure were obtained and these show out of plane epitaxy with monoclinic (002){sub m}-orientation. The temperature dependence of the electrical resistivity of these SrIrO{sub 3} thin films were investigated and metallic behavior was observed down to 50 K.

  7. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  8. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

    Science.gov (United States)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  9. Thermo-electrical properties of composite semiconductor thin films composed of nanocrystalline graphene-vanadium oxides.

    Science.gov (United States)

    Jung, Hye-Mi; Um, Sukkee

    2014-12-01

    This paper presents an experimental comparative study involving the characterization of the thermo-electrical and structural properties of graphene-based vanadium oxide (graphene-VOx) composite thin films on insulating and conducting surfaces (i.e., fused quartz and acrylic resin-impregnated graphite) produced by a sol-gel process via dipping-pyrolysis. A combination of FE-SEM and XPS analyses revealed that the graphene-VOx composite thin films (coated onto fused quartz) exhibiting the microstructure of 2-graded nanowire arrays with a diameter of 40-80 nm were composed of graphene, a few residual oxygen-containing functional groups (i.e., C-O and C=O), and the VO2 Magnéli phase. The temperature-dependent electrical resistance measured on the as-deposited thin films clearly demonstrated that the graphene-VOx composite nanowire arrays thermally grown on fused quartz act as a semiconductor switch, with a transition temperature of 64.7 degrees C in the temperature range of -20 degrees C to 140 degrees C, resulting from the contributions of graphene and graphene oxides. In contrast, the graphene-VOx composite thin films deposited onto acrylic resin-impregnated graphite exhibit a superlinear semiconducting property of extremely low electrical resistance with negative temperature coefficients (i.e., approximately four orders of magnitude lower than that of the fused quartz), despite the similar microstructural and morphological characteristics. This difference is attributed to the synergistic effects of the paramagnetic metal feature of the tightly stacked nanowire arrays consisting of hexagonal V2O3 on the intrinsic electrical properties of the acrylic resin-impregnated graphite substrate, as revealed by FE-SEM, EDX, AFM, and XRD measurements. Although the thermo-sensitive electrical properties of the graphene-VOx composite thin films are very substrate specific, the applicability of graphene sheets can be considerably effective in the formation of highly planar arrays

  10. Effect of CO on surface oxidation of uranium metal

    International Nuclear Information System (INIS)

    Wang, X.; Fu, Y.; Xie, R.

    1997-01-01

    The surface reactions of uranium metal with carbon monoxide at 25 and 200 deg C have been studied by X-ray photoelectron spectroscopy (XPS);respectively. Adsorption of carbon monoxide on the surface layer of uranium metal leads to partial reduction of surface oxide and results in U4f photoelectron peak shifting to the lower binding energy. The content of oxygen in the surface oxide is decreased and O1s/O4f ratio decreases with increasing the exposure of carbon monoxide. The investigation indicates the surface layer of uranium metal has resistance to further oxidation in the atmosphere of carbon monoxide. (author)

  11. Heteroepitaxy of Cerium Oxide Thin Films on Cu(111

    Directory of Open Access Journals (Sweden)

    Josef Mysliveček

    2015-09-01

    Full Text Available An important part of fundamental research in catalysis is based on theoretical and modeling foundations which are closely connected with studies of single-crystalline catalyst surfaces. These so-called model catalysts are often prepared in the form of epitaxial thin films, and characterized using advanced material characterization techniques. This concept provides the fundamental understanding and the knowledge base needed to tailor the design of new heterogeneous catalysts with improved catalytic properties. The present contribution is devoted to development of a model catalyst system of CeO2 (ceria on the Cu(111 substrate. We propose ways to experimentally characterize and control important parameters of the model catalyst—the coverage of the ceria layer, the influence of the Cu substrate, and the density of surface defects on ceria, particularly the density of step edges and the density and the ordering of the oxygen vacancies. The large spectrum of controlled parameters makes ceria on Cu(111 an interesting alternative to a more common model system ceria on Ru(0001 that has served numerous catalysis studies, mainly as a support for metal clusters.

  12. Fabrication of Arrays of Metal and Metal Oxide Nanotubes by Shadow Evaporation

    NARCIS (Netherlands)

    Dickey, Michael D.; Weiss, Emily A.; Smythe, Elizabeth J.; Chiechi, Ryan C.; Capasso, Federico; Whitesides, George M.

    2008-01-01

    This paper describes a simple technique for fabricating uniform arrays of metal and metal oxide nanotubes with controlled heights and diameters. The technique involves depositing material onto an anodized aluminum oxide (AAO) membrane template using a collimated electron beam evaporation source. The

  13. Metal-core@metal oxide-shell nanomaterials for gas-sensing applications: a review

    International Nuclear Information System (INIS)

    Mirzaei, A.; Janghorban, K.; Hashemi, B.; Neri, G.

    2015-01-01

    With an ever-increasing number of applications in many advanced fields, gas sensors are becoming indispensable devices in our daily life. Among different types of gas sensors, conductometric metal oxide semiconductor (MOS) gas sensors are found to be the most appealing for advanced applications in the automotive, biomedical, environmental, and safety sectors because of the their high sensitivity, reduced size, and low cost. To improve their sensing characteristics, new metal oxide-based nanostructures have thus been proposed in recent years as sensing materials. In this review, we extensively review gas-sensing properties of core@ shell nanocomposites in which metals as the core and metal oxides as the shell structure, both of nanometer sizes, are assembled into a single metal@metal oxide core–shell. These nanostructures not only combine the properties of both noble metals and metal oxides, but also bring unique synergetic functions in comparison with single-component materials. Up-dated achievements in the synthesis and characterization of metal@metal oxide core–shell nanostructures as well as their use in MOS sensors are here reported with the main objective of providing an overview about their gas-sensing properties

  14. Metal-core@metal oxide-shell nanomaterials for gas-sensing applications: a review

    Science.gov (United States)

    Mirzaei, A.; Janghorban, K.; Hashemi, B.; Neri, G.

    2015-09-01

    With an ever-increasing number of applications in many advanced fields, gas sensors are becoming indispensable devices in our daily life. Among different types of gas sensors, conductometric metal oxide semiconductor (MOS) gas sensors are found to be the most appealing for advanced applications in the automotive, biomedical, environmental, and safety sectors because of the their high sensitivity, reduced size, and low cost. To improve their sensing characteristics, new metal oxide-based nanostructures have thus been proposed in recent years as sensing materials. In this review, we extensively review gas-sensing properties of core@ shell nanocomposites in which metals as the core and metal oxides as the shell structure, both of nanometer sizes, are assembled into a single metal@metal oxide core-shell. These nanostructures not only combine the properties of both noble metals and metal oxides, but also bring unique synergetic functions in comparison with single-component materials. Up-dated achievements in the synthesis and characterization of metal@metal oxide core-shell nanostructures as well as their use in MOS sensors are here reported with the main objective of providing an overview about their gas-sensing properties.

  15. Optical and electrical characterizations of cerium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Fu-Chien; Lai, Chih-Ming, E-mail: fcchiu@mail.mcu.edu.t [Department of Electronic Engineering, Ming Chuan University, No. 5, De Ming Rd., Gui Shan District, Taoyuan County 333, Taiwan (China)

    2010-02-24

    The optical dielectric function of cerium oxide (CeO{sub 2}) was characterized by the spectroscopic ellipsometry (SE) technique using the Kramers-Kronig relation and the Tauc-Lorentz (TL) dispersion model. Experimental results showed that the bandgap energy and refractive index at 632.8 nm of CeO{sub 2} are about 3.23 {+-} 0.05 eV and 2.33 {+-} 0.08, respectively. Based on the optical properties, the electrical conduction mechanisms in CeO{sub 2} thin films are determined to be Schottky emission in a medium electric field (0.5-1.6 MV cm{sup -1}) from 350 to 500 K and Poole-Frenkel emission in a high electric field (>2.36 MV cm{sup -1}) from 450 to 500 K. Accordingly, the conduction band offsets between Al and CeO{sub 2} and the trap energy level are about 0.62 {+-} 0.01 eV and 1.53 {+-} 0.01 eV, respectively.

  16. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  17. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  18. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  19. A general approach to mesoporous metal oxide microspheres loaded with noble metal nanoparticles

    KAUST Repository

    Jin, Zhao

    2012-04-26

    Catalytic microspheres: A general approach is demonstrated for the facile preparation of mesoporous metal oxide microspheres loaded with noble metal nanoparticles (see TEM image in the picture). Among 18 oxide/noble metal catalysts, TiO 2/0.1 mol Pd microspheres showed the highest turnover frequency in NaBH 4 reduction of 4-nitrophenol (see picture). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Displacement method and apparatus for reducing passivated metal powders and metal oxides

    Science.gov (United States)

    Morrell,; Jonathan S. , Ripley; Edward, B [Knoxville, TN

    2009-05-05

    A method of reducing target metal oxides and passivated metals to their metallic state. A reduction reaction is used, often combined with a flux agent to enhance separation of the reaction products. Thermal energy in the form of conventional furnace, infrared, or microwave heating may be applied in combination with the reduction reaction.

  1. Aging of trivalent metal hydroxide/oxide gels in divalent metal salt ...

    Indian Academy of Sciences (India)

    Unknown

    Aging of trivalent metal hydroxide/oxide gels in divalent metal salt solutions: Mechanism of formation of layered double hydroxides (LDHs). A V RADHA and P ..... This situation promotes coprecipitation of the two metal hydroxides, by virtue of which the titrations yield the. Zn–Al LDH. The LDHs isolated before and after ...

  2. Mechanical properties of vapor-deposited thin metallic films: a status report

    International Nuclear Information System (INIS)

    Adler, P.H.

    1982-01-01

    The mechanical properties of vapor-deposited thin metallic films are being studied in conjunction with the target fabrication group associated with the laser-fusion energy program. The purpose of the work is to gain an understanding as to which metals are structurally best suited to contain a glass microsphere filled with deuterium-tritium (D-T) gas at large internal pressures

  3. Fabrication and characterization of metal oxide nanowire sensors.

    Science.gov (United States)

    Shen, Guozhen

    2008-01-01

    Trace detection of chemicals and biological species like industrial gases, proteins, drug molecules, and chemical warfare agents, is an important issue to human health and safety. Central to this issue is the development of high sensitivity, high selectivity, high stability and rapid detection chemical and bio-sensors. With special geometry and chemical and physical properties, one-dimensional (1-D) metal oxide nanostructures have become the promising candidates for chemical and biosensing applications in recent years. Here, we intend to provide an overview on this interesting and important field. In the first part, the patents for rational synthesis of 1-D metal oxide nanostructures on a large scale will be introduced. The patents on chemical and biosensors built on 1-D metal oxide nanostructures are then introduced in the second part. Finally, we provide a review of the recent development of electronic nose systems using 1-D metal oxide nanostructures, which show great potential for the improvement of sensing abilities.

  4. Oxide semiconductor thin-film transistors: a review of recent advances.

    Science.gov (United States)

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which

  5. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

    2012-02-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

  6. Oxide Thin-Film Electronics using All-MXene Electrical Contacts.

    Science.gov (United States)

    Wang, Zhenwei; Kim, Hyunho; Alshareef, Husam N

    2018-02-23

    2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti 3 C 2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti 3 C 2 ) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm 2 V -1 s -1 and switching ratios of 3.6 × 10 6 and 1.1 × 10 3 , respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti 3 C 2 ) can play an important role as contact material in nanoelectronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Plutonium metal and oxide container weld development and qualification

    International Nuclear Information System (INIS)

    Fernandez, R.; Horrell, D.R.; Hoth, C.W.; Pierce, S.W.; Rink, N.A.; Rivera, Y.M.; Sandoval, V.D.

    1996-01-01

    Welds were qualified for a container system to be used for long-term storage of plutonium metal and oxide. Inner and outer containers are formed of standard tubing with stamped end pieces gas-tungsten-arc (GTA) welded onto both ends. The weld qualification identified GTA parameters to produce a robust weld that meets the requirements of the Department of Energy standard DOE-STD-3013-94, ''Criteria for the Safe Storage of Plutonium Metals and Oxides.''

  8. Heavy metal removal from water/wastewater by nanosized metal oxides: a review.

    Science.gov (United States)

    Hua, Ming; Zhang, Shujuan; Pan, Bingcai; Zhang, Weiming; Lv, Lu; Zhang, Quanxing

    2012-04-15

    Nanosized metal oxides (NMOs), including nanosized ferric oxides, manganese oxides, aluminum oxides, titanium oxides, magnesium oxides and cerium oxides, provide high surface area and specific affinity for heavy metal adsorption from aqueous systems. To date, it has become a hot topic to develop new technologies to synthesize NMOs, to evaluate their removal of heavy metals under varying experimental conditions, to reveal the underlying mechanism responsible for metal removal based on modern analytical techniques (XAS, ATR-FT-IR, NMR, etc.) or mathematical models, and to develop metal oxide-based materials of better applicability for practical use (such as granular oxides or composite materials). The present review mainly focuses on NMOs' preparation, their physicochemical properties, adsorption characteristics and mechanism, as well as their application in heavy metal removal. In addition, porous host supported NMOs are particularly concerned because of their great advantages for practical application as compared to the original NMOs. Also, some magnetic NMOs were included due to their unique separation performance. Copyright © 2011 Elsevier B.V. All rights reserved.

  9. Synthesis of Thin Film Composite Metal-Organic Frameworks Membranes on Polymer Supports

    KAUST Repository

    Barankova, Eva

    2017-06-01

    Since the discovery of size-selective metal-organic frameworks (MOF) researchers have tried to manufacture them into gas separation membranes. ZIF-8 became the most studied MOF for membrane applications mainly because of its simple synthesis, good chemical and thermal stability, recent commercial availability and attractive pore size. The aim of this work is to develop convenient methods for growing ZIF thin layers on polymer supports to obtain defect-free ZIF membranes with good gas separation properties. We present new approaches for ZIF membranes preparation on polymers. We introduce zinc oxide nanoparticles in the support as a secondary metal source for ZIF-8 growth. Initially the ZnO particles were incorporated into the polymer matrix and later on the surface of the polymer by magnetron sputtering. In both cases, the ZnO facilitated to create more nucleation opportunities and improved the ZIF-8 growth compared to the synthesis without using ZnO. By employing the secondary seeded growth method, we were able to obtain thin (900 nm) ZIF-8 layer with good gas separation performance. Next, we propose a metal-chelating polymer as a suitable support for growing ZIF layers. Defect-free ZIF-8 films with a thickness of 600 nm could be obtained by a contra-diffusion method. ZIF-8 membranes were tested for permeation of hydrogen and hydrocarbons, and one of the highest selectivities reported so far for hydrogen/propane, and propylene/propane was obtained. Another promising method to facilitate the growth of MOFs on polymeric supports is the chemical functionalization of the support surface with functional groups, which can complex metal ions and which can covalently bond the MOF crystals. We functionalized the surface of a common porous polymeric membrane with amine groups, which took part in the reaction to form ZIF-8 nanocrystals. We observed an enhancement in adhesion between the ZIF layer and the support. The effect of parameters of the contra-diffusion experiment

  10. Metallization of uranium oxide powders by lithium reduction

    International Nuclear Information System (INIS)

    Kim, I. S.; Seo, J. S.; Oh, S. C.; Hong, S. S.; Lee, W. K.

    2002-01-01

    Laboratory scale experiments on the reduction of uranium oxide powders into metal by lithium were performed in order to determine the equipment setup and optimum operation conditions. The method of filtration using the porous magnesia filter was introduced to recover uranium metal powders produced. Based on the laboratory scale experimental results, mock-up scale (20 kg U/batch) metallizer was designed and made. The applicability to the metallization process was estimated with respect to the thermal stability of the porous magnesia filter in the high temperature molten salt, the filtration of the fine uranium metal powders, and the operability of the equipment

  11. Photodegradation of phenanthrene on metal oxides and fly ashes

    Energy Technology Data Exchange (ETDEWEB)

    Guesten, H.; Bozicevic, Z.; Klasinc, L.

    1984-10-01

    The photodegradation of phenanthrene adsorbed on the surface of metal oxides, sea sand and fly ashes is investigated in a rotating bed photoreactor emitting simulated solar light. Metal oxides (SiO/sub 2/, Al/sub 2/O/sub 3/, SnO/sub 2/, MgO), which do not absorb the simulated solar light, give rise to a very slow photodegradation of the adsorbed phenanthrene. Metal oxides (TiO/sub 2/, ZnO, Fe/sub 2/O/sub 3/), which exhibit semiconduction properties, induce a very rapid photodegradation. The two modifications of TiO/sub 2/, rutile and anatase, show different activities in causing the photodegradation of phenanthrene. While in the class of non-solar light absorbing metal oxides the adsorbed phenanthrene is degraded only by direct excitation to its electronic states, photons of band-gap energy in semiconducting metal oxides excite electron-hole pairs at the surface. The quantum yield of the photodegradation of phenanthrene adsorbed on a fly ash of the mullite-quartz of glass type lies between the quantum yields of the two classes of metal oxides investigated. Surprisingly, however, phenanthrene and the very photolabile anthracene are extremely resistant to photodegradation when adsorbed on a fly ash of the spinel type with pig iron content and magnetic properties.

  12. Meso-/Nanoporous Semiconducting Metal Oxides for Gas Sensor Applications

    Directory of Open Access Journals (Sweden)

    Nguyen Duc Hoa

    2015-01-01

    Full Text Available Development and/or design of new materials and/or structures for effective gas sensor applications with fast response and high sensitivity, selectivity, and stability are very important issues in the gas sensor technology. This critical review introduces our recent progress in the development of meso-/nanoporous semiconducting metal oxides and their applications to gas sensors. First, the basic concepts of resistive gas sensors and the recent synthesis of meso-/nanoporous metal oxides for gas sensor applications are introduced. The advantages of meso-/nanoporous metal oxides are also presented, taking into account the crystallinity and ordered/disordered porous structures. Second, the synthesis methods of meso-/nanoporous metal oxides including the soft-template, hard-template, and temple-free methods are introduced, in which the advantages and disadvantages of each synthetic method are figured out. Third, the applications of meso-/nanoporous metal oxides as gas sensors are presented. The gas nanosensors are designed based on meso-/nanoporous metal oxides for effective detection of toxic gases. The sensitivity, selectivity, and stability of the meso-/nanoporous gas nanosensors are also discussed. Finally, some conclusions and an outlook are presented.

  13. Metal-insulator transition and nonlinear optical responseof sputter-deposited V3O5 thin films

    Science.gov (United States)

    Rúa, Armando; Díaz, Ramón D.; Kumar, Nardeep; Lysenko, Sergiy; Fernández, Félix E.

    2017-06-01

    The compound V3O5, a member of the vanadium oxide Magnéli series, exhibits a metal-insulator transition near 430 K, the highest known temperature value among all vanadium oxides. It has been studied before mainly in single-crystal form, and for the very few cases in which thin films have been fabricated before, the procedure has required extensive post-deposition annealing of other oxides or vanadium metal at high temperatures in tightly controlled atmospheres. For the present work, V3O5 films were deposited directly on SiO2 glass substrates, without subsequent annealing, by DC magnetron sputtering. X-ray diffraction study of the samples evidenced oxygen deficiency, accommodated by oxygen vacancies. Resistivity measurements from 300 to 500 K revealed the metal-insulator transition by Tc ˜ 430 K, with an associated resistivity change by a factor of 20, and no detectable hysteresis in heating-cooling cycles, in agreement with most single-crystal studies. Resistivity values obtained were, however, lower than published results for bulk crystal values, particularly at temperatures below Tc. This was attributed to conduction electrons generated by the oxygen vacancies. Gradual resistivity increase in a very thin sample, through heating in air at temperatures up to 500 K, lends support to this argument. Using a pump-probe scattering technique, the V3O5 films were also probed for ultrafast nonlinear optical response. A reduction in the transient relative scattered light signal was recorded, which reached -10% within ˜800 fs. This observed response, likely related to the photoinduced insulator-to-metal phase transition, should stimulate additional interest in this material.

  14. Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor

    NARCIS (Netherlands)

    Li, Jeng-Ting; Liu, Li-Chih; Chen, Jen-Sue; Jeng, Jiann-Shing; Liao, Po-Yung; Chiang, Hsiao-Cheng; Chang, Ting-Chang; Nugraha, Mohamad Insan; Loi, Maria Antonietta

    2017-01-01

    Carrier transport properties of solution processed ultra thin (4 nm) zinc-tin oxide (ZTO) thin film transistor are investigated based on its transfer characteristics measured at the temperature ranging from 310K to 77K. As temperature decreases, the transfer curves show a parellel shift toward more

  15. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Unknown

    Keywords. Transparent conductors; ZnO thin films; photovoltaics. 1. Introduction. Zinc oxide is an n-type semiconductor with a wide direct band gap of 3⋅3 eV. Thin films of ZnO find application as transparent conducting electrode in photovoltaics, .... surface energy will become larger as the film grows. Then the growth ...

  16. Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structures

    Science.gov (United States)

    Singh, N.; Rys, A.

    1993-02-01

    The fabrication of metal-oxide-semiconductor (MOS) capacitors on n-type, Si-face 6H-SiC is described for both wet and dry oxidation processes, and the effect of thermal oxidation conditions on the electrical properties of MOS capacitors are investigated. The values of the oxide thickness were obtained as a function of the oxidation time at various oxidation temperatures (which were kept between 1150 and 1250 C). It was found that samples prepared by both dry and wet oxidation showed accumulation, depletion, and inversion regions under illumination, while inversion did not occur under dark conditions. The C-V characteristics of oxidized samples were improved after the oxidized samples were annealed in argon for 30 min. The relation between the oxide thickness and the oxidation time could be expressed by parabolic law, which is also used for thermal oxidation of Si.

  17. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Karteri, İbrahim, E-mail: ibrahimkarteri@gmail.com [Department of Materials Science And Engineering, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Karataş, Şükrü [Department of Physics, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Yakuphanoğlu, Fahrettin [Department of Physics, Fırat University, Elazıg 2310 (Turkey)

    2014-11-01

    Highlights: • We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor. • Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. • We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. - Abstract: We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I{sub on}/I{sub off} of GO-TFT were found to be 0.105 cm{sup 2} V{sup −1} s{sup −1}, −8.7 V, 4.03 V/decade and 10, respectively.

  18. Electrochemical activity of heavy metal oxides in the process of ...

    Indian Academy of Sciences (India)

    Unknown

    2002-02-02

    Feb 2, 2002 ... Abstract. The influence of heavy metal oxides on the chloride induced corrosion of steel reinforcement in concrete was studied. Significant inhibition and stimulation of chloride induced corrosion have been observed. Basicity and acidity of the relevant metal ions, and their ability to form complexes are ...

  19. Electrochemical activity of heavy metal oxides in the process of ...

    Indian Academy of Sciences (India)

    Unknown

    2002-02-02

    Feb 2, 2002 ... The influence of heavy metal oxides on the chloride induced corrosion of steel reinforcement in concrete was studied. ... Basicity and acidity of the relevant metal ions, and their ability to form complexes are considered as the main factors of the .... niobium, tantalum, protactinium, and uranium. However,.

  20. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    International Nuclear Information System (INIS)

    Schroeder, Herbert

    2015-01-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F 1/2 ) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different

  1. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    Science.gov (United States)

    Schroeder, Herbert

    2015-06-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current-electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current-electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F1/2) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current-electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide

  2. Retention of heavy metals on layered double hydroxides thin films deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 76900 Bucharest-Magurele (Romania); Birjega, R.; Matei, A.; Luculescu, C.; Mitu, B.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 76900 Bucharest-Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

    2014-05-01

    Heavy metals are toxic and hazardous pollutants in the environment due to their nonbiodegradability and persistence, which can pose serious threats to living organisms. The ability of Mg–Al based layered double hydroxides (LDHs) thin films to retain heavy metals from aqueous solutions at different concentrations is a novel topic with prospects of attractive applications, such as detection of heavy metals. We report on the ability of a series of Mg–Al based layered double hydroxides thin films to detect Ni and Co cations in aqueous solutions. Uptake of heavy metals ions such as Ni{sup 2+}, Co{sup 2+} from aqueous solutions was studied as function of contact time at a standard metal ion concentration. The LDHs thin films were deposited using pulsed laser deposition (PLD). The different adsorption mechanisms were studied in connection with different heavy metals used as probe cations. X-ray diffraction, atomic force microscopy, scanning electron microscopy coupled with energy dispersive X-ray spectroscopy, Fourier transform infra-red spectroscopy were the techniques used for the investigation of as deposited and after heavy metals retention thin films.

  3. Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

    Science.gov (United States)

    Plumb, Nicholas C.; Radović, Milan

    2017-11-01

    Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

  4. Preparation of novel polymer–metal oxide nanocomposites with ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. This article deals with preparation of nanocomposite which comprised of nanophase separated structure of polymer chains and metal oxide. By grafting poly(hydroxyethyl methacrylate), poly(HEMA) on the surface of titanium which is covered by passive titanium oxide by atom transfer radical polymerization.

  5. Self-organized pattern formation in the oxidation of supported iron thin films. II. A simulation study

    Science.gov (United States)

    Ogale, Abhijit S.

    2001-07-01

    The process of oxidation of supported iron thin films is modeled by casting it into the form of an activator-inhibitor system, with precursor oxidation state as the activator, and stress produced by the large density difference between the metal and its oxide as a fast-diffusing inhibitor. An activator-substrate mechanism also coexists due to the finite availability of iron. The redistribution of iron by diffusion via vacancies also indirectly contributes to the activation process. A slow process of ripening, which minimizes surface energy, is suggested to convert the early leaflike pattern to a spiral assembly of hillocks. This model simulation yields patterns, which closely resemble the patterns observed in experiments reported by Shinde et al. [Phys. Rev. B 64, 035408 (2001)], in the accompanying Paper I.

  6. Charge transport in metal oxide nanocrystal-based materials

    Science.gov (United States)

    Runnerstrom, Evan Lars

    There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochemical devices additionally rely on efficient transport of ionic charge in and around metal oxides. Colloidal synthesis has enabled metal oxide nanocrystals to emerge as a relatively new but highly tunable class of materials. Certain metal oxide nanocrystals, particularly highly doped metal oxides, have been enjoying rapid development in the last decade. As in myriad other materials systems, structure dictates the properties of metal oxide nanocrystals, but a full understanding of how nanocrystal synthesis, the processing of nanocrystal-based materials, and the structure of nanocrystals relate to the resulting properties of nanocrystal-based materials is still nascent. Gaining a fundamental understanding of and control over these structure-property relationships is crucial to developing a holistic understanding of metal oxide nanocrystals. The unique ability to tune metal oxide nanocrystals by changing composition through the introduction of dopants or by changing size and shape affords a way to study the interplay between structure, processing, and properties. This overall goal of this work is to chemically synthesize colloidal metal oxide nanocrystals, process them into useful materials, characterize charge transport in materials based on colloidal metal oxide nanocrystals, and develop ways to manipulate charge transport. In particular, this dissertation characterizes how the charge transport properties of metal oxide nanocrystal-based materials depend on their processing and

  7. Development and characterization of fluorine tin oxide electrodes modified with high area porous thin films containing gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Quintana, Carmen, E-mail: carmen.quintana@uam.e [Dpto. Quimica Analitica y Analisis Instrumental. Facultad de Ciencias. Universidad Autonoma de Madrid. Cantoblanco. 28049-Madrid (Spain); Atienzar, Pedro; Budroni, Gerolamo [Instituto de Tecnologia Quimica de Valencia, UPV-CSIC, Universidad Politecnica de Valencia, Av. de los Naranjos s/n, 46022-Valencia (Spain); Mora, Laura; Hernandez, Lucas [Dpto. Quimica Analitica y Analisis Instrumental. Facultad de Ciencias. Universidad Autonoma de Madrid. Cantoblanco. 28049-Madrid (Spain); Garcia, Hermenegildo; Corma, Avelino [Instituto de Tecnologia Quimica de Valencia, UPV-CSIC, Universidad Politecnica de Valencia, Av. de los Naranjos s/n, 46022-Valencia (Spain)

    2010-10-29

    Different electrode materials are prepared using fluoride doped tin oxide (FTO) electrodes modified with high area porous thin films of metal oxides containing gold nanoparticles. Three different metal oxides (TiO{sub 2}, MgO and SnO{sub 2}) have been assayed to this end. The effect of the metal oxide nature and gold loading on the structure and performance of the modified electrodes was examined by Scanning Electron Microscopy, Transmission Electron Microscopy, X-Ray Diffraction (XRD), Diffuse Reflectance Spectroscopy and electrochemical techniques. XRD measurements reveal that MgO electrodes present the smallest gold nanoparticles after the sintering step however, the electrochemical response of these electrodes shows important problems of mass transport derived from the high porosity of these materials (Brunauer Emmett Teller area of 125 m{sup 2}/g). The excellent sintering properties of titania nanoparticles result in robust films attached to the FTO electrodes which allow more reliable and reproducible results from an electroanalytical point of view.

  8. Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

    Science.gov (United States)

    Kuo, Chil-Chyuan

    2011-07-01

    Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=-3.6483 x+2.1409, the surface roughness of AZO thin films ( y) can be directly deduced from the peak power density ( x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.

  9. Heterogeneous Partial (ammOxidation and Oxidative Dehydrogenation Catalysis on Mixed Metal Oxides

    Directory of Open Access Journals (Sweden)

    Jacques C. Védrine

    2016-01-01

    Full Text Available This paper presents an overview of heterogeneous partial (ammoxidation and oxidative dehydrogenation (ODH of hydrocarbons. The review has been voluntarily restricted to metal oxide-type catalysts, as the partial oxidation field is very broad and the number of catalysts is quite high. The main factors of solid catalysts for such reactions, designated by Grasselli as the “seven pillars”, and playing a determining role in catalytic properties, are considered to be, namely: isolation of active sites (known to be composed of ensembles of atoms, Me–O bond strength, crystalline structure, redox features, phase cooperation, multi-functionality and the nature of the surface oxygen species. Other important features and physical and chemical properties of solid catalysts, more or less related to the seven pillars, are also emphasized, including reaction sensitivity to metal oxide structure, epitaxial contact between an active phase and a second phase or its support, synergy effect between several phases, acid-base aspects, electron transfer ability, catalyst preparation and activation and reaction atmospheres, etc. Some examples are presented to illustrate the importance of these key factors. They include light alkanes (C1–C4 oxidation, ethane oxidation to ethylene and acetic acid on MoVTe(SbNb-O and Nb doped NiO, propene oxidation to acrolein on BiMoCoFe-O systems, propane (ammoxidation to (acrylonitrile acrylic acid on MoVTe(SbNb-O mixed oxides, butane oxidation to maleic anhydride on VPO: (VO2P2O7-based catalyst, and isobutyric acid ODH to methacrylic acid on Fe hydroxyl phosphates. It is shown that active sites are composed of ensembles of atoms whose size and chemical composition depend on the reactants to be transformed (their chemical and size features and the reaction mechanism, often of Mars and van Krevelen type. An important aspect is the fact that surface composition and surface crystalline structure vary with reaction on stream until

  10. Metal organic chemical vapor deposition of superconducting YBa2Cu3O7-x thin films

    Science.gov (United States)

    Zawadzki, P. A.; Tompa, G. S.; Norris, P. E.; Chern, C. S.; Caracciolo, R.; Kear, B. H.; Noh, D. W.; Gallois, B.

    1990-04-01

    The discovery of YBCO superconductors has stimulated a great deal of scientific and technological research into thin films of these materials. Because the MOCVD technique is known to produce high quality films in the III/V and II/VI material groups, our approach has been to apply the method to superconducting thin films. Thin films were grown in a vertical high speed (0 2000 rpm) rotating disk reactor. The source materials were metal β-diketonates kept at temperatures in excess of 100° in order to obtain growth rates of 0.3 to 0.5 μm/hr. The precursors were transported to the chamber with a nitrogen carrier and injected separately in order to avoid any gas phase reactions. The chamber pressure was maintained at 76 Torr with an oxygen partial pressure of 38 Torr. A resistance heater was used to keep the substrate temperature at 500° YBa2Cu3O7- x films were deposited simultaneously on a variety of substrates such as (100) MgO, (1-102) sapphire, (100) SrTiO3 and (100) YSZ. Full XPS spectra were collected for the binary oxides. The scans demonstrate the existence of Y2O3, BaO, and CuO with the correct valence state for the metallic species. Energy dispersive analysis of x-ray (EDAX) was used to determine film compositions by comparing EDAX spectral intensity to a known superconducting standard. Appropriate changes were made in the precursor flows to correct the stoichiometry. The as-grown films were dark brown and semi-transparent. Cross-sectional SEM photomicrographs revealed an ordered columnar structure. After annealing at 950 980° however, the films on (100) SrTiO3 appeared dull black and opaque. The surface morphology exhibited smooth large plate-like grains. X-ray data clearly display an orthorhombic phase, with c-axis perpendicular to the substrate surface. Four point resistance measurements for films on (100) SrTiO3 show the onset of superconductivity at 90 K with a complete loss of resistance at 88 K. This sharp (≤2K) transition shows the high quality

  11. Trends in Metal Oxide Stability for Nanorods, Nanotubes, and Surfaces

    DEFF Research Database (Denmark)

    Mowbray, Duncan; Martinez, Jose Ignacio; Vallejo, Federico Calle

    2011-01-01

    ,2) nanorods, (3,3) nanotubes, and the (110) and (100) surfaces. These formation energies can be described semiquantitatively (mean absolute error ≈ 0.12 eV) by the fraction of metal−oxygen bonds broken and the metal d-band and p-band centers in the bulk metal oxide.......The formation energies of nanostructures play an important role in determining their properties, including their catalytic activity. For the case of 15 different rutile and 8 different perovskite metal oxides, we used density functional theory (DFT) to calculate the formation energies of (2...

  12. Structure-Reactivity Relationships in Multi-Component Transition Metal Oxide Catalysts FINAL Report

    Energy Technology Data Exchange (ETDEWEB)

    Altman, Eric I. [Yale Univ., New Haven, CT (United States)

    2015-10-06

    The focus of the project was on developing an atomic-level understanding of how transition metal oxide catalysts function. Over the course of several renewals the specific emphases shifted from understanding how local structure and oxidation state affect how molecules adsorb and react on the surfaces of binary oxide crystals to more complex systems where interactions between different transition metal oxide cations in an oxide catalyst can affect reactivity, and finally to the impact of cluster size on oxide stability and reactivity. Hallmarks of the work were the use of epitaxial growth methods to create surfaces relevant to catalysis yet tractable for fundamental surface science approaches, and the use of scanning tunneling microscopy to follow structural changes induced by reactions and to pinpoint adsorption sites. Key early findings included the identification of oxidation and reduction mechanisms on a tungsten oxide catalyst surface that determine the sites available for reaction, identification of C-O bond cleavage as the rate limiting step in alcohol dehydration reactions on the tungsten oxide surface, and demonstration that reduction does not change the favored reaction pathway but rather eases C-O bond cleavage and thus reduces the reaction barrier. Subsequently, a new reconstruction on the anatase phase of TiO2 relevant to catalysis was discovered and shown to create sites with distinct reactivity compared to other TiO2 surfaces. Building on this work on anatase, the mechanism by which TiO2 enhances the reactivity of vanadium oxide layers was characterized and it was found that the TiO2 substrate can force thin vanadia layers to adopt structures they would not ordinarily form in the bulk which in turn creates differences in reactivity between supported layers and bulk samples. From there, the work progressed to studying well-defined ternary oxides where synergistic effects between the two cations can induce

  13. Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels

    Directory of Open Access Journals (Sweden)

    Subramanian B

    2015-10-01

    Full Text Available Balasubramanian Subramanian,1 Sundaram Maruthamuthu,2 Senthilperumal Thanka Rajan1 1Electrochemical Material Science Division, 2Corrosion and Materials Protection Division, Central Electrochemical Research Institute, Karaikudi, India Abstract: Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.% of approximately 1.5 µm and 3 µm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature. Keywords: thin film metallic glasses, sputtering, biocompatibility, corrosion, antimicrobial activity

  14. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  15. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  16. Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation

    International Nuclear Information System (INIS)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L.

    2002-01-01

    By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

  17. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  18. Nanostructured Metal Oxides for Stoichiometric Degradation of Chemical Warfare Agents.

    Science.gov (United States)

    Štengl, Václav; Henych, Jiří; Janoš, Pavel; Skoumal, Miroslav

    2016-01-01

    Metal oxides have very important applications in many areas of chemistry, physics and materials science; their properties are dependent on the method of preparation, the morphology and texture. Nanostructured metal oxides can exhibit unique characteristics unlike those of the bulk form depending on their morphology, with a high density of edges, corners and defect surfaces. In recent years, methods have been developed for the preparation of metal oxide powders with tunable control of the primary particle size as well as of a secondary particle size: the size of agglomerates of crystallites. One of the many ways to take advantage of unique properties of nanostructured oxide materials is stoichiometric degradation of chemical warfare agents (CWAs) and volatile organic compounds (VOC) pollutants on their surfaces.

  19. Application of a mixed metal oxide catalyst to a metallic substrate

    Science.gov (United States)

    Sevener, Kathleen M. (Inventor); Lohner, Kevin A. (Inventor); Mays, Jeffrey A. (Inventor); Wisner, Daniel L. (Inventor)

    2009-01-01

    A method for applying a mixed metal oxide catalyst to a metallic substrate for the creation of a robust, high temperature catalyst system for use in decomposing propellants, particularly hydrogen peroxide propellants, for use in propulsion systems. The method begins by forming a prepared substrate material consisting of a metallic inner substrate and a bound layer of a noble metal intermediate. Alternatively, a bound ceramic coating, or frit, may be introduced between the metallic inner substrate and noble metal intermediate when the metallic substrate is oxidation resistant. A high-activity catalyst slurry is applied to the surface of the prepared substrate and dried to remove the organic solvent. The catalyst layer is then heat treated to bind the catalyst layer to the surface. The bound catalyst layer is then activated using an activation treatment and calcinations to form the high-activity catalyst system.

  20. Is Neurotoxicity of Metallic Nanoparticles the Cascades of Oxidative Stress?

    Science.gov (United States)

    Song, Bin; Zhang, YanLi; Liu, Jia; Feng, XiaoLi; Zhou, Ting; Shao, LongQuan

    2016-06-01

    With the rapid development of nanotechnology, metallic (metal or metal oxide) nanoparticles (NPs) are widely used in many fields such as cosmetics, the food and building industries, and bio-medical instruments. Widespread applications of metallic NP-based products increase the health risk associated with human exposures. Studies revealed that the brain, a critical organ that consumes substantial amounts of oxygen, is a primary target of metallic NPs once they are absorbed into the body. Oxidative stress (OS), apoptosis, and the inflammatory response are believed to be the main mechanisms underlying the neurotoxicity of metallic NPs. Other studies have disclosed that antioxidant pretreatment or co-treatment can reverse the neurotoxicity of metallic NPs by decreasing the level of reactive oxygen species, up-regulating the activities of antioxidant enzymes, decreasing the proportion of apoptotic cells, and suppressing the inflammatory response. These findings suggest that the neurotoxicity of metallic NPs might involve a cascade of events following NP-induced OS. However, additional research is needed to determine whether NP-induced OS plays a central role in the neurotoxicity of metallic NPs, to develop a comprehensive understanding of the correlations among neurotoxic mechanisms and to improve the bio-safety of metallic NP-based products.

  1. Shape-controlled syntheses of metal oxide nanoparticles by the introduction of rare-earth metals.

    Science.gov (United States)

    Song, Hyo-Won; Kim, Na-Young; Park, Ji-Eun; Ko, Jae-Hyeon; Hickey, Robert J; Kim, Yong-Hyun; Park, So-Jung

    2017-02-23

    Here, we report the size- and shape-controlled synthesis of metal oxide nanoparticles through the introduction of rare-earth metals. The addition of gadolinium oleate in the synthesis of iron oxide nanoparticles induced sphere-to-cube shape changes of nanoparticles and generated iron oxide nanocubes coated with gadolinium. Based on experimental investigations and density functional theory (DFT) calculations, we attribute the shape change to the facet-selective binding of undecomposed gadolinium oleates. While many previous studies on the shape-controlled syntheses of nanoparticles rely on the stabilization of specific crystal facets by anionic surfactants or their decomposition products, this study shows that the interaction between growing transition metal oxide nanoparticles and rare-earth metal complexes can be used as a robust new mechanism for shape-controlled syntheses. Indeed, we demonstrated that this approach was applicable to other transition metal oxide nanoparticles (i.e., manganese oxide and manganese ferrite) and rare earth metals (i.e., gadolinium, europium, and cerium). This study also demonstrates that the nature of metal-ligand bonding can play an important role in the shape control of nanoparticles.

  2. General incorporation of diverse components inside metal-organic framework thin films at room temperature

    Science.gov (United States)

    Mao, Yiyin; Li, Junwei; Cao, Wei; Ying, Yulong; Hu, Pan; Liu, Yu; Sun, Luwei; Wang, Hongtao; Jin, Chuanhong; Peng, Xinsheng

    2014-11-01

    Porous metal-organic frameworks (MOFs) demonstrate great potential for numerous applications. Although hetero-functional components have been encapsulated within MOF crystalline particles, the uniform incorporation of functional species with different sizes, shapes and functions in MOF thin films with dual properties, especially at room temperature and without the degradation of the MOF framework, remains a significant challenge towards further enriching their functions for various purposes. Here we report a general method that can rapidly encapsulate diverse functional components, including small ions, micrometre-sized particles, inorganic nanoparticles and bioactive proteins, in MOF thin films at room temperature via a metal-hydroxide-nanostrand-assisted confinement technique. These functional component-encapsulated MOF composite thin films exhibit synergistic and size-selective catalytic, bio-electrochemical, conductive and flexible functionalities that are desirable for thin film devices, including catalytic membrane reactors, biosensors and flexible electronic devices.

  3. Screening effects in metal sculptured thin films studied with terahertz Mueller matrix ellipsometry

    Science.gov (United States)

    Hofmann, T.; Knight, S.; Sekora, D.; Schmidt, D.; Herzinger, C. M.; Woollam, J. A.; Schubert, E.; Schubert, M.

    2017-11-01

    The anisotropic optical dielectric functions of a metal (cobalt) slanted columnar thin film deposited by electron-beam glancing angle deposition are reported for the terahertz (THz) frequency domain before and after the slanted columnar thin film was passivated by a conformal alumina coating. A simple effective medium dielectric function homogenization approach which describes isolated, electrically conductive columns rendering the thin film biaxial (orthorhombic) is used to model the observed optical responses. Upon passivating the slanted columnar thin film with a 3 nm thick alumina film an increase of both the real and the imaginary part of the dielectric function for all major polarizability directions is found and attributed to screening effects within the spatially coherent metal nanocolumns.

  4. A tool for cutting ultra thin slits in metals

    Science.gov (United States)

    Mcmahon, W.

    1972-01-01

    Tool produces slits of 0.0305 mm widths in materials up to RC 50 hardness, minimizes material waste and improves precision. Device may be used for general metal cutting and for producing simulated cracks in metal samples used in fatigue tests.

  5. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    International Nuclear Information System (INIS)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-01-01

    Highlights: •LaNiO 2 films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO 2 . •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO 2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO 2 is isostructural to SrCuO 2 , the parent compound of high-T c Sr 0.9 La 0.1 CuO 2 with T c = 44 K, and has 3d 9 configuration, which is very rare in oxides but common to high-T c copper oxides. The bulk synthesis of LaNiO 2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO 2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO 2 . The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures

  6. Heterogeneous Metal Catalysts for Oxidation Reactions

    Directory of Open Access Journals (Sweden)

    Md. Eaqub Ali

    2014-01-01

    Full Text Available Oxidation reactions may be considered as the heart of chemical synthesis. However, the indiscriminate uses of harsh and corrosive chemicals in this endeavor are threating to the ecosystems, public health, and terrestrial, aquatic, and aerial flora and fauna. Heterogeneous catalysts with various supports are brought to the spotlight because of their excellent capabilities to accelerate the rate of chemical reactions with low cost. They also minimize the use of chemicals in industries and thus are friendly and green to the environment. However, heterogeneous oxidation catalysis are not comprehensively presented in literature. In this short review, we clearly depicted the current state of catalytic oxidation reactions in chemical industries with specific emphasis on heterogeneous catalysts. We outlined here both the synthesis and applications of important oxidation catalysts. We believe it would serve as a reference guide for the selection of oxidation catalysts for both industries and academics.

  7. Gas phase deposition of oxide and metal-oxide coatings on fuel particles

    International Nuclear Information System (INIS)

    Patokin, A.P.; Khrebtov, V.L.; Shirokov, B.M.

    2008-01-01

    Production processes and properties of oxide (Al 2 O 3 , ZrO 2 ) and metal-oxide (Mo-Al 2 O 3 , Mo-ZrO 2 , W-Al 2 O 3 , W-ZrO 2 ) coatings on molybdenum substrates and uranium dioxide fuel particles were investigated. It is shown that the main factors that have an effect on the deposition rate, density, microstructure and other properties of coatings are the deposition temperature, the ratio of H 2 and CO 2 flow rates, the total reactor pressure and the ratio of partial pressures of corresponding metal chlorides during formation of metal-oxide coatings

  8. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    Energy Technology Data Exchange (ETDEWEB)

    Wing, Waylin J.; Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu; Gutha, Rithvik R.; Campbell, Quinn [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  9. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  10. Methods of making metal oxide nanostructures and methods of controlling morphology of same

    Science.gov (United States)

    Wong, Stanislaus S; Hongjun, Zhou

    2012-11-27

    The present invention includes a method of producing a crystalline metal oxide nanostructure. The method comprises providing a metal salt solution and providing a basic solution; placing a porous membrane between the metal salt solution and the basic solution, wherein metal cations of the metal salt solution and hydroxide ions of the basic solution react, thereby producing a crystalline metal oxide nanostructure.

  11. Stripping scattering of fast atoms on surfaces of metal-oxide crystals and ultrathin films

    International Nuclear Information System (INIS)

    Blauth, David

    2010-01-01

    In the framework of the present dissertation the interactions of fast atoms with surfaces of bulk oxides, metals and thin films on metals were studied. The experiments were performed in the regime of grazing incidence of atoms with energies of some keV. The advantage of this scattering geometry is the high surface sensibility and thus the possibility to determine the crystallographic and electronic characteristics of the topmost surface layer. In addition to these experiments, the energy loss and the electron emission induced by scattered projectiles was investigated. The energy for electron emission and exciton excitation on Alumina/NiAl(110) and SiO 2 /Mo(112) are determined. By detection of the number of projectile induced emitted electrons as function of azimuthal angle for the rotation of the target surface, the geometrical structure of atoms forming the topmost layer of different adsorbate films on metal surfaces where determined via ion beam triangulation. (orig.)

  12. Ion exchange of alkaline metals on the thin-layer zinc ferrocyanide

    International Nuclear Information System (INIS)

    Betenekov, N.D.; Buklanov, G.V.; Ipatova, E.G.; Korotkin, Yu.S.

    1991-01-01

    Basic regularities of interphase distribution in the system of thin-layer sorbent on the basis of mixed zinc ferrocyanide (FZ)-alkaline metal solution (Na, K, Rb, Cs, Fr) in the column chromatography made are studied. It is established that interphase distribution of microgram amounts of alkaline metals in the systems thin-layer FZ-NH 4 NO 3 electrolyte solutions is of ion-exchange character and subjected to of law effective mass. It is shown that FZ thin-layer material is applicable for effective chromatographic separation of alkaline metal trace amounts. An approach to the choice of a conditions of separate elution of Na, K, Rb, Cs, Fr in the column chromatography mode

  13. Deposition of metal chalcogenide thin films by successive ionic layer ...

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  14. Deposition of metal chalcogenide thin films by successive ionic layer

    Indian Academy of Sciences (India)

    ) method, has emerged as one of the solution methods to deposit a variety of compound materials in thin film form. The SILAR method is inexpensive, simple and convenient for large area deposition. A variety of substrates such as insulators, ...

  15. Determination of magnetic properties of multilayer metallic thin films

    International Nuclear Information System (INIS)

    Birlikseven, C.

    2000-01-01

    In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

  16. Room temperature transparent conducting oxides based on zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Clatot, J. [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France); Campet, G. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Zeinert, A. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue St. Leu, 80039, Amiens (France); Labrugere, C. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Rougier, A., E-mail: aline.rougier@u-picardie.fr [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France)

    2011-04-01

    Doped zinc oxide thin films are grown on glass substrate at room temperature under oxygen atmosphere, using pulsed laser deposition (PLD). O{sub 2} pressure below 1 Pa leads to conductive films. A careful characterization of the film stoichiometry and microstructure using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) concludes on a decrease in crystallinity with Al and Ga additions ({<=}3%). The progressive loss of the (0 0 2) orientation is associated with a variation of the c parameter value as a function of the film thickness and substrate nature. ZnO:Al and ZnO:Ga thin films show a high optical transmittance (>80%) with an increase in band gap from 3.27 eV (pure ZnO) to 3.88 eV and 3.61 eV for Al and Ga doping, respectively. Optical carrier concentration, optical mobility and optical resistivity are deduced from simulation of the optical data.

  17. Temperature-dependent phase evolution of copper-oxide thin-films on Au(111).

    Science.gov (United States)

    Möller, Christoph; Fedderwitz, Hanna; Noguera, Claudine; Goniakowski, Jacek; Nilius, Niklas

    2018-02-21

    The formation of ultrathin copper oxide layers on an Au(111) surface is explored with scanning tunneling microscopy and density functional theory. Depending on the thermal treatment of as-grown Cu-O samples, a variety of thin-film morphologies is observed. Whereas 1D oxide stripes with Au[112[combining macron

  18. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  19. Comparative Analysis of Cobalt Oxide Nanoisland Stability and Edge Structures on Three Related Noble Metal Surfaces: Au (111), Pt (111) and Ag (111)

    DEFF Research Database (Denmark)

    Fester, Jakob; Bajdich, Michal; Walton, Alexander

    2017-01-01

    Metal oxide nanostructures and thin films grown on metallic substrates have attracted strong attention as model catalysts and as interesting inverse catalyst systems in their own right. In this study, we investigate the role of metal support in the growth and stabilization of cobalt oxide...... nanostructures on the three related (111) surfaces of Au, Pt and Ag, as investigated by means of high-resolution scanning tunneling microscopy and DFT calculations. All three substrates promote the growth of crystalline CoOx (x = 1−2) islands under oxidative conditions, but we find several noteworthy differences...

  20. Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory.

    Science.gov (United States)

    Jiang, Hao; Stewart, Derek A

    2017-05-17

    Introducing dopants is an important way to tailor and improve electronic properties of transition metal oxides used as high-k dielectric thin films and resistance switching layers in leading memory technologies, such as dynamic and resistive random access memory (ReRAM). Ta 2 O 5 has recently received increasing interest because Ta 2 O 5 -based ReRAM demonstrates high switching speed, long endurance, and low operating voltage. However, advances in optimizing device characteristics with dopants have been hindered by limited and contradictory experiments in this field. We report on a systematic study on how various metal dopants affect oxygen vacancy formation in crystalline and amorphous Ta 2 O 5 from first principles. We find that isoelectronic dopants and weak n-type dopants have little impact on neutral vacancy formation energy and that p-type dopants can lower the formation energy significantly by introducing holes into the system. In contrast, n-type dopants have a deleterious effect and actually increase the formation energy for charged oxygen vacancies. Given the similar doping trend reported for other binary transition metal oxides, this doping trend should be universally valid for typical binary transition metal oxides. Based on this guideline, we propose that p-type dopants (Al, Hf, Zr, and Ti) can lower the forming/set voltage and improve retention properties of Ta 2 O 5 ReRAM.

  1. Oxidation and metal-insertion in molybdenite surfaces: evaluation of charge-transfer mechanisms and dynamics

    Directory of Open Access Journals (Sweden)

    Shutthanandan V

    2008-06-01

    Full Text Available Abstract Molybdenum disulfide (MoS2, a layered transition-metal dichalcogenide, has been of special importance to the research community of geochemistry, materials and environmental chemistry, and geotechnical engineering. Understanding the oxidation behavior and charge-transfer mechanisms in MoS2 is important to gain better insight into the degradation of this mineral in the environment. In addition, understanding the insertion of metals into molybdenite and evaluation of charge-transfer mechanism and dynamics is important to utilize these minerals in technological applications. Furthermore, a detailed investigation of thermal oxidation behavior and metal-insertion will provide a basis to further explore and model the mechanism of adsorption of metal ions onto geomedia. The present work was performed to understand thermal oxidation and metal-insertion processes of molybdenite surfaces. The analysis was performed using atomic force microscopy (AFM, scanning electron microscopy (SEM, transmission electron microscopy (TEM, Rutherford backscattering spectrometry (RBS, and nuclear reaction analysis (NRA. Structural studies using SEM and TEM indicate the local-disordering of the structure as a result of charge-transfer process between the inserted lithium and the molybdenite layer. Selected area electron diffraction measurements indicate the large variations in the diffusivity of lithium confirming that the charge-transfer is different along and perpendicular to the layers in molybdenite. Thermal heating of molybenite surface in air at 400°C induces surface oxidation, which is slow during the first hour of heating and then increases significantly. The SEM results indicate that the crystals formed on the molybdenite surface as a result of thermal oxidation exhibit regular thin-elongated shape. The average size and density of the crystals on the surface is dependent on the time of annealing; smaller size and high density during the first one-hour and

  2. Phase coexistence in the metal-insulator transition of a VO2 thin film

    International Nuclear Information System (INIS)

    Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

    2005-01-01

    Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

  3. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  4. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  5. Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

    International Nuclear Information System (INIS)

    Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

    2005-01-01

    Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

  6. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    International Nuclear Information System (INIS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

    2009-01-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

  7. Metal Acetylacetonates as General Precursors for the Synthesis of Early Transition Metal Oxide Nanomaterials

    OpenAIRE

    Willis, Amanda L.; Chen, Zhuoying; He, Jiaqing; Zhu, Yimei; Turro, Nicholas J.; O'Brien, Stephen

    2007-01-01

    A versatile, convenient, and nontoxic solvothermal method for the synthesis of nanocrystalline iron, chromium, and manganese oxides is described. This method employs the reactions of metal acetylacetonate precursors and oxygen-containing solvents in a reaction to prepare metal oxide nanoparticles. Characterization of these nanocrystalline materials was carried out employing transmission electron microscopy (TEM), high-resolution TEM (HRTEM), X-ray diffraction (XRD), and elemental analysis.

  8. Metal Acetylacetonates as General Precursors for the Synthesis of Early Transition Metal Oxide Nanomaterials

    Directory of Open Access Journals (Sweden)

    Amanda L. Willis

    2007-01-01

    Full Text Available A versatile, convenient, and nontoxic solvothermal method for the synthesis of nanocrystalline iron, chromium, and manganese oxides is described. This method employs the reactions of metal acetylacetonate precursors and oxygen-containing solvents in a reaction to prepare metal oxide nanoparticles. Characterization of these nanocrystalline materials was carried out employing transmission electron microscopy (TEM, high-resolution TEM (HRTEM, X-ray diffraction (XRD, and elemental analysis.

  9. Localization and characterization of ultra thin gate oxide breakdown regions

    NARCIS (Netherlands)

    Akil, N.A.; Le Minh, P.; Holleman, J.; Houtsma, V.E.; Woerlee, P.H.

    2000-01-01

    Nano-scale diodes were formed after intentional gate oxide breakdown of n+ –olysilicon/oxide/p+ –ubstrate MOS capacitors by Fowler-Nordheim constant current injection. The nano-scale diodes called diode-antifuses are created by the formation of a small link through the oxide between the n+ –oly and

  10. Chemistry of layered d-metal pnictide oxides and their potential as candidates for new superconductors

    International Nuclear Information System (INIS)

    Ozawa, Tadashi C; Kauzlarich, Susan M

    2008-01-01

    Layered d-metal pnictide oxides are a unique class of compounds which consist of characteristic d-metal pnictide layers and metal oxide layers. More than 100 of these layered compounds, including the recently discovered Fe-based superconducting pnictide oxides, can be classified into nine structure types. These structure types and the chemical and physical properties of the characteristic d-metal pnictide layers and metal oxide layers of the layered d-metal pnictide oxides are reviewed and discussed. Furthermore, possible approaches to design new superconductors based on these layered d-metal pnictide oxides are proposed. (topical review)

  11. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  12. Advances in metal-induced oxidative stress and human disease

    International Nuclear Information System (INIS)

    Jomova, Klaudia; Valko, Marian

    2011-01-01

    Detailed studies in the past two decades have shown that redox active metals like iron (Fe), copper (Cu), chromium (Cr), cobalt (Co) and other metals undergo redox cycling reactions and possess the ability to produce reactive radicals such as superoxide anion radical and nitric oxide in biological systems. Disruption of metal ion homeostasis may lead to oxidative stress, a state where increased formation of reactive oxygen species (ROS) overwhelms body antioxidant protection and subsequently induces DNA damage, lipid peroxidation, protein modification and other effects, all symptomatic for numerous diseases, involving cancer, cardiovascular disease, diabetes, atherosclerosis, neurological disorders (Alzheimer's disease, Parkinson's disease), chronic inflammation and others. The underlying mechanism of action for all these metals involves formation of the superoxide radical, hydroxyl radical (mainly via Fenton reaction) and other ROS, finally producing mutagenic and carcinogenic malondialdehyde (MDA), 4-hydroxynonenal (HNE) and other exocyclic DNA adducts. On the other hand, the redox inactive metals, such as cadmium (Cd), arsenic (As) and lead (Pb) show their toxic effects via bonding to sulphydryl groups of proteins and depletion of glutathione. Interestingly, for arsenic an alternative mechanism of action based on the formation of hydrogen peroxide under physiological conditions has been proposed. A special position among metals is occupied by the redox inert metal zinc (Zn). Zn is an essential component of numerous proteins involved in the defense against oxidative stress. It has been shown, that depletion of Zn may enhance DNA damage via impairments of DNA repair mechanisms. In addition, Zn has an impact on the immune system and possesses neuroprotective properties. The mechanism of metal-induced formation of free radicals is tightly influenced by the action of cellular antioxidants. Many low-molecular weight antioxidants (ascorbic acid (vitamin C), alpha

  13. A comparison in activity between transition-metal oxides and transition metals

    Science.gov (United States)

    Vojvodic, Aleksandra; Studt, Felix; Abild-Pedersen, Frank; Bligaard, Thomas; Nørskov, Jens

    2012-02-01

    Transition-metal oxides are widely used materials in catalysis as substrates and promoters, but also as the active catalyst materials themselves. We compare the reactivity of transition-metal oxides with the one of transition metals. The comparison is exemplified for the ammonia synthesis reaction. First we show that there exist characteristic Brønsted-Evans Polanyi (BEP) relations (linear relations between transition state and dissociation energies) for dissociation of molecules on transition-metal oxides in the rutile and perovskite structure. It is well-known that the (211) metal surface is several orders of magnitude more reactive than the (111) metal surface due to the lower BEP line for the 211 facet. We find that both rutiles and perovskites follow BEP relations that are lower than the one of the 211 facet. Second we utilize the established BEP relations together with calculated adsorption energetics in a micro-kinetic model to obtain a volcano plot for the catalytic activity. We find that oxides have a higher turn over frequency as compared with metals. Hence, oxides intrinsically have a great advantage in terms of catalytic activity which opens up for catalyst design.

  14. CO-oxidation catalysts: Low-temperature CO oxidation over Noble-Metal Reducible Oxide (NMRO) catalysts

    Science.gov (United States)

    Herz, Richard K.

    1990-01-01

    Oxidation of CO to CO2 is an important reaction technologically and environmentally and a complex and interesting reaction scientifically. In most cases, the reaction is carried out in order to remove CO as an environmental hazard. A major application of heterogeneous catalysts is catalytic oxidation of CO in the exhaust of combustion devices. The reaction over catalysts in exhaust gas is fast and often mass-transfer-limited since exhaust gases are hot and O2/CO ratios are high. The main challenges to catalyst designers are to control thermal sintering and chemical poisoning of the active materials. The effect of the noble metal on the oxide is discussed, followed by the effect of the oxide on the noble metal, the interaction of the noble metal and oxide to form unique catalytic sites, and the possible ways in which the CO oxidation reaction is catalyzed by the NMRO materials.

  15. Thin Glass Coatings for the Corrosion Protection of Metals

    DEFF Research Database (Denmark)

    Lampert, Felix

    This dissertation presents the research work aimed at developing functional submicrometer thick SiOx barrier coatings for the corrosion protection of stainless steel substrates in chloride containing media, which may enable the use of stainless steels as plate material for marine heat exchangers......, and thus lower the component cost with respect to incumbent materials such as titanium alloys. The technology is of particular interest for the application on heat exchanger plates and components, since the thin coating films are expected to serve as efficient ionic barrier coatings, which prevent issues...... with localized corrosion and do not impact the heat transfer or the component performance. The herein presented approach focuses primarily on the formation of SiOx-like thin films from Hydrogen Silsesquioxane (HSQ) –based “spin-on-glass” (SOG) precursor. The technology is well known for the deposition...

  16. Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

    Science.gov (United States)

    Hsing, Greg Hsiang-Chun

    Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

  17. Polymer-supported metals and metal oxide nanoparticles: synthesis, characterization, and applications

    International Nuclear Information System (INIS)

    Sarkar, Sudipta; Guibal, E.; Quignard, F.; SenGupta, A. K.

    2012-01-01

    Metal and metal oxide nanoparticles exhibit unique properties in regard to sorption behaviors, magnetic activity, chemical reduction, ligand sequestration among others. To this end, attempts are being continuously made to take advantage of them in multitude of applications including separation, catalysis, environmental remediation, sensing, biomedical applications and others. However, metal and metal oxide nanoparticles lack chemical stability and mechanical strength. They exhibit extremely high pressure drop or head loss in fixed-bed column operation and are not suitable for any flow-through systems. Also, nanoparticles tend to aggregate; this phenomenon reduces their high surface area to volume ratio and subsequently reduces effectiveness. By appropriately dispersing metal and metal oxide nanoparticles into synthetic and naturally occurring polymers, many of the shortcomings can be overcome without compromising the parent properties of the nanoparticles. Furthermore, the appropriate choice of the polymer host with specific functional groups may even lead to the enhancement of the properties of nanoparticles. The synthesis of hybrid materials involves two broad pathways: dispersing the nanoparticles (i) within pre-formed or commercially available polymers; and (ii) during the polymerization process. This review presents a broad coverage of nanoparticles and polymeric/biopolymeric host materials and the resulting properties of the hybrid composites. In addition, the review discusses the role of the Donnan membrane effect exerted by the host functionalized polymer in harnessing the desirable properties of metal and metal oxide nanoparticles for intended applications.

  18. X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

    Directory of Open Access Journals (Sweden)

    Nicholas F. Quackenbush

    2015-08-01

    Full Text Available Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm, contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES and angular soft X-ray absorption spectroscopy (XAS to study epitaxial VO2/TiO2 (100 films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K insulating phase with evidence of vanadium-vanadium (V-V dimers and a high-temperature (400 K metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

  19. Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Dapeng [Iowa State Univ., Ames, IA (United States)

    2010-01-01

    The work presented in this thesis mainly focuses on the nucleation and growth of metal thin films on multimetallic surfaces. First, we have investigated the Ag film growth on a bulk metallic glass surface. Next, we have examined the coarsening and decay of bilayer Ag islands on NiAl(110) surface. Third, we have investigated the Ag film growth on NiAl(110) surface using low-energy electron diffraction (LEED). At last, we have reported our investigation on the epitaxial growth of Ni on NiAl(110) surface. Some general conclusions can be drawn as follows. First, Ag, a bulk-crystalline material, initially forms a disordered wetting layer up to 4-5 monolayers on Zr-Ni-Cu-Al metallic glass. Above this coverage, crystalline 3D clusters grow, in parallel with the flatter regions. The cluster density increases with decreasing temperature, indicating that the conditions of island nucleation are far-from-equilibrium. Within a simple model where clusters nucleate whenever two mobile Ag adatoms meet, the temperature-dependence of cluster density yields a (reasonable) upper limit for the value of the Ag diffusion barrier on top of the Ag wetting layer of 0.32 eV. Overall, this prototypical study suggests that it is possible to grow films of a bulk-crystalline metal that adopt the amorphous character of a glassy metal substrate, if film thickness is sufficiently low. Next, the first study of coarsening and decay of bilayer islands has been presented. The system was Ag on NiAl(110) in the temperature range from 185 K to 250 K. The coarsening behavior, has some similarities to that seen in the Ag(110) homoepitaxial system studied by Morgenstern and co-workers. At 185 K and 205 K, coarsening of Ag islands follows a Smoluchowski ripening pathway. At 205 K and 250 K, the terrace diffusion limited Ostwald ripening dominants. The experimental observed temperature for the transition from SR to OR is 205 K. The SR exhibits anisotropic island diffusion and the OR exhibits 1D decay of island

  20. Fabrication of Metal and Metal Oxide Nanoparticles by Algae and their Toxic Effects

    OpenAIRE

    Siddiqi, Khwaja Salahuddin; Husen, Azamal

    2016-01-01

    Of all the aquatic organisms, algae are a good source of biomolecules. Since algae contain pigments, proteins, carbohydrates, fats, nucleic acids and secondary metabolites such as alkaloids, some aromatic compounds, macrolides, peptides and terpenes, they act as reducing agents to produce nanoparticles from metal salts without producing any toxic by-product. Once the algal biomolecules are identified, the nanoparticles of desired shape or size may be fabricated. The metal and metal oxide nano...

  1. Preventing Bacterial Infections using Metal Oxides Nanocoatings on Bone Implant

    Science.gov (United States)

    Duceac, L. D.; Straticiuc, S.; Hanganu, E.; Stafie, L.; Calin, G.; Gavrilescu, S. L.

    2017-06-01

    Nowadays bone implant removal is caused by infection that occurs around it possibly acquired after surgery or during hospitalization. The purpose of this study was to reveal some metal oxides applied as coatings on bone implant thus limiting the usual antibiotics-resistant bacteria colonization. Therefore ZnO, TiO2 and CuO were synthesized and structurally and morphologically analized in order to use them as an alternative antimicrobial agents deposited on bone implant. XRD, SEM, and FTIR characterization techniques were used to identify structure and texture of these nanoscaled metal oxides. These metal oxides nanocoatings on implant surface play a big role in preventing bacterial infection and reducing surgical complications.

  2. Water Oxidation Mechanisms of Metal Oxide Catalysts by Vibrational Spectroscopy of Transient Intermediates

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division; Univ. of California, Berkeley, CA (United States); Frei, Heinz [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Biophysics and Integrated Bioimaging Division; Univ. of California, Berkeley, CA (United States)

    2017-02-22

    Water oxidation is an essential reaction of an artificial photosystem for solar fuel generation because it provides electrons needed to reduce carbon dioxide or protons to a fuel. Earth-abundant metal oxides are among the most attractive catalytic materials for this reaction because of their robustness and scalability, but their efficiency poses a challenge. Knowledge of catalytic surface intermediates gained by vibrational spectroscopy under reaction conditions plays a key role in uncovering kinetic bottlenecks and provides a basis for catalyst design improvements. Recent dynamic infrared and Raman studies reveal the molecular identity of transient surface intermediates of water oxidation on metal oxides. In conclusion, combined with ultrafast infrared observations of how charges are delivered to active sites of the metal oxide catalyst and drive the multielectron reaction, spectroscopic advances are poised to play a key role in accelerating progress toward improved catalysts for artificial photosynthesis.

  3. Electrical conductivity in oxygen-deficient phases of transition metal oxides from first-principles calculations.

    Energy Technology Data Exchange (ETDEWEB)

    Bondi, Robert James; Desjarlais, Michael Paul; Thompson, Aidan Patrick; Brennecka, Geoffrey L.; Marinella, Matthew

    2013-09-01

    Density-functional theory calculations, ab-initio molecular dynamics, and the Kubo-Greenwood formula are applied to predict electrical conductivity in Ta2Ox (0 x 5) as a function of composition, phase, and temperature, where additional focus is given to various oxidation states of the O monovacancy (VOn; n=0,1+,2+). Our calculations of DC conductivity at 300K agree well with experimental measurements taken on Ta2Ox thin films and bulk Ta2O5 powder-sintered pellets, although simulation accuracy can be improved for the most insulating, stoichiometric compositions. Our conductivity calculations and further interrogation of the O-deficient Ta2O5 electronic structure provide further theoretical basis to substantiate VO0 as a donor dopant in Ta2O5 and other metal oxides. Furthermore, this dopant-like behavior appears specific to neutral VO cases in both Ta2O5 and TiO2 and was not observed in other oxidation states. This suggests that reduction and oxidation reactions may effectively act as donor activation and deactivation mechanisms, respectively, for VO0 in transition metal oxides.

  4. Resistive switching in ZrO2 based metal-oxide-metal structures

    International Nuclear Information System (INIS)

    Kaerkkaenen, Irina

    2014-01-01

    The goal of this work is a deeper understanding of the influence of the (i) metal-oxide-metal (MOM) layer stacks configuration, (ii) the oxide films microstructure, (iii) and their defect structure on the appearance of different switching modes, i.e. unipolar (UP) and bipolar (BP). The first part deals with the fabrication of ZrO 2 thin films by an industrial compatible atomic layer deposition (ALD) process, the chemical, structural and morphological characterization of the films, the growth of ZrO 2 /TiO 2 bilayers, the integration of the layers into metal-oxide-metal (MOM) devices and the electrical characterization with focus on the RS behavior. In the second part the effect of the device structure, in particular the thickness of the electrochemical active electrode (EAE) and the ZrO 2 film morphology, on the RS switching polarity of Pt/ZrO 2 /(EAE) cells is discussed. ZrO 2 films and ZrO 2 /TiO 2 bilayers were grown by ALD and were carefully structurally and electrically characterized. The ZrO 2 films grown from Zr[N(CH 3 )C 2 H 5 ] 4 (TEMA-Zr) at 240 C were polycrystalline with a mixture of cubic/tetragonal phases. ALD/H 2 O-ZrO 2 films exhibited a random oriented polycrystalline structure, whereas the ALD/O 3 -ZrO 2 films consisted of preferably oriented cubic shaped grains. Pt/ZrO 2 /Ti/Pt structures with a Ti top electrode (TE) thickness of 5 to 20 nm showed unipolar type RS behavior, while by increasing the Ti TE thickness a gradual change of switching polarity from unipolar to bipolar with a completely bipolar type RS behavior for a Ti TE thickness of 40 nm is found. The switching in Pt/ZrO 2 /TiO 2 /Ti/Pt devices was unipolar, comparable to Pt/ZrO 2 /Ti/Pt cells. In contrast, bilayers with the reverse structure, Pt/TiO 2 /ZrO 2 /Ti/Pt, showed non-switching behavior. The effect of the cells stack structure on the polarity of the RS behavior was studied in detail for 20 nm thick ZrO 2 films grown by an ozone based ALD process and integrated into Pt/ZrO 2

  5. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  6. A characterization method for the metal thin film

    Science.gov (United States)

    Liu, Qinggang; Xie, Xian; Qin, Zirui; Liu, Chao

    2016-09-01

    The evanescent wave, occurred when the incident light generates total internal reflection on the interface between glass and metallic film, can raise the surface plasmon (SP) on the metallic film. SP and evanescent wave can resonate under certain angle of incidence when they have the same frequency and wave number. In this case, the power of reflection beam decreases dramatically, and the resonance peak appears in the reflection spectroscopic. The positions of resonance peaks are different when the refraction indexes of medium on the metallic film or the thicknesses of the metallic film are different. And it is found that the phase position of p-component of reflected light changes with the metal film thickness, while the phase position of s-component almost doesn't change in the Surface Plasmon Resonance effect. S-polarized light is taken as reference and interferometry is adopted to turn the change of the phase position into the change of interference fringes position in the paper, and the film thickness can be derived from it. The simulation results indicated that, through making use of piecewise quadratic fitting on the phase data, the inaccuracy with the range of film thickness is between 30 and 80 nanometers is not more than 0.33 nm.

  7. Designing porous metallic glass compact enclosed with surface iron oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jae Young; Park, Hae Jin; Hong, Sung Hwan; Kim, Jeong Tae; Kim, Young Seok; Park, Jun-Young; Lee, Naesung [Hybrid Materials Center (HMC), Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Seo, Yongho [Graphene Research Institute (GRI) & HMC, Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 143-747 (Korea, Republic of); Park, Jin Man, E-mail: jinman_park@hotmail.com [Global Technology Center, Samsung Electronics Co., Ltd, 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742 (Korea, Republic of); Kim, Ki Buem, E-mail: kbkim@sejong.ac.kr [Hybrid Materials Center (HMC), Faculty of Nanotechnology and Advanced Materials Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 143-747 (Korea, Republic of)

    2015-06-25

    Highlights: • Porous metallic glass compact was developed using electro-discharge sintering process. • Uniform PMGC can only be achieved when low electrical input energy was applied. • Functional iron-oxides were formed on the surface of PMGCs by hydrothermal technique. - Abstract: Porous metallic glass compact (PMGC) using electro-discharge sintering (EDS) process of gas atomized Zr{sub 41.2}Ti{sub 13.8}Cu{sub 12.5}Ni{sub 10}Be{sub 22.5} metallic glass powder was developed. The formation of uniform PMGC can only be achieved when low electrical input energy was applied. Functional iron-oxides were formed on the surface of PMGCs by hydrothermal technique. This finding suggests that PMGC can be applied in the new area such as catalyst via hydrothermal technique and offer a promising guideline for using the metallic glasses as a potential functional application.

  8. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  9. Graphene oxide on magnetron sputtered silver thin films for SERS and metamaterial applications

    Science.gov (United States)

    Politano, Grazia Giuseppina; Cazzanelli, Enzo; Versace, Carlo; Vena, Carlo; De Santo, Maria Penelope; Castriota, Marco; Ciuchi, Federica; Bartolino, Roberto

    2018-01-01

    In the last years the potential of combining the attractive materials characteristics of graphene related materials and silver nanostructures for SERS and metamaterials has emerged. Here, we report of graphene oxide thin films deposited by dip-coating on magnetron sputtered silver thin films. Our work represents a novelty in the field of the study of graphene oxide- silver composites, since magnetron sputtering deposition is an alternative way to silver thin films fabrication; previous works used instead silver nitrate aqueous solution mixed with the graphene oxide. Micro-Raman technique, morphological analysis and variable angle spectroscopic ellipsometry were performed. The final SERS signal intensity was investigated and we found Raman peaks dependent on the intensity of the laser and the thickness of silver and GO films. These results could open somestudies on plasmonics and on the reduction of graphene oxide mediated by silver thin films. Moreover, effective medium theory calculations show the possible use of these graphene oxide/silver thin films in multilayer hyperbolic metamaterials for optical applications.

  10. A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

    International Nuclear Information System (INIS)

    Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

    2006-01-01

    The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

  11. The mechanism of electroforming of metal oxide memristive switches

    Science.gov (United States)

    Joshua Yang, J.; Miao, Feng; Pickett, Matthew D.; Ohlberg, Douglas A. A.; Stewart, Duncan R.; Lau, Chun Ning; Williams, R. Stanley

    2009-05-01

    Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields—through 'electroforming' or 'breakdown'—critically affecting CMOS (complementary metal-oxide-semiconductor) logic, DRAM (dynamic random access memory) and flash memory, and tunnel barrier oxides. An initial irreversible electroforming process has been invariably required for obtaining metal oxide resistance switches, which may open urgently needed new avenues for advanced computer memory and logic circuits including ultra-dense non-volatile random access memory (NVRAM) and adaptive neuromorphic logic circuits. This electrical switching arises from the coupled motion of electrons and ions within the oxide material, as one of the first recognized examples of a memristor (memory-resistor) device, the fourth fundamental passive circuit element originally predicted in 1971 by Chua. A lack of device repeatability has limited technological implementation of oxide switches, however. Here we explain the nature of the oxide electroforming as an electro-reduction and vacancy creation process caused by high electric fields and enhanced by electrical Joule heating with direct experimental evidence. Oxygen vacancies are created and drift towards the cathode, forming localized conducting channels in the oxide. Simultaneously, O2- ions drift towards the anode where they evolve O2 gas, causing physical deformation of the junction. The problematic gas eruption and physical deformation are mitigated by shrinking to the nanoscale and controlling the electroforming voltage polarity. Better yet, electroforming problems can be largely eliminated by engineering the device structure to remove 'bulk' oxide effects in favor of interface-controlled electronic switching.

  12. Large Lateral Photovoltaic Effect in Metal-(Oxide-Semiconductor Structures

    Directory of Open Access Journals (Sweden)

    Chongqi Yu

    2010-11-01

    Full Text Available The lateral photovoltaic effect (LPE can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

  13. Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures.

    Science.gov (United States)

    Yu, Chongqi; Wang, Hui

    2010-01-01

    The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

  14. Combustion Kinetics of Metal Oxide and Halide Radicals.

    Science.gov (United States)

    1985-01-04

    often not obeyed. Particularly for exothermic and slightly endothermic reactions, order of magnitude errors can be made by extrap - 1olations based on the...schematic of the HTFFR, high-temperature fast-flow reactor , method we are using to generate the metallic radicals and measure their oxidation kinetics...TEMPERATURE INTERVALS. TECHNIQUE High-Temperature Fast-Flow Reactor FURNACE REACTION LENGTH-REACTION TIME SNA- LASER FLUORESCENCE OXIDANTIo CO2 METAL IN

  15. New Digital Metal-Oxide (MOx) Sensor Platform.

    Science.gov (United States)

    Rüffer, Daniel; Hoehne, Felix; Bühler, Johannes

    2018-03-31

    The application of metal oxide gas sensors in Internet of Things (IoT) devices and mobile platforms like wearables and mobile phones offers new opportunities for sensing applications. Metal-oxide (MOx) sensors are promising candidates for such applications, thanks to the scientific progresses achieved in recent years. For the widespread application of MOx sensors, viable commercial offerings are required. In this publication, the authors show that with the new Sensirion Gas Platform (SGP) a milestone in the commercial application of MOx technology has been reached. The architecture of the new platform and its performance in selected applications are presented.

  16. Metal Oxide Nano structures: Synthesis, Properties, and Applications

    International Nuclear Information System (INIS)

    Xu, L. H.; Patil, D. S.; Yang, J.; Xiao, J.

    2015-01-01

    In recent years, nano structured materials have attracted wide attention due to their fascinating optical and electrical properties, which make these materials potentially suitable for applications in electronics, optics, photonics, and sensors. Some metal oxides show a wide variety of morphologies such as nano wires, nano rods, nano tubes, nano rings, and nano belts. Synthesis and investigation of these metal-oxide nano structures are beneficial not only for understanding the fundamental phenomena in low dimensional systems, but also for developing new-generation nano devices with high performance.

  17. Microwave-assisted route for synthesis of nanosized metal oxides

    Directory of Open Access Journals (Sweden)

    Arunkumar Lagashetty et al

    2007-01-01

    Full Text Available Microwave-assisted route for the synthesis of nanomaterials has gained importance in the field of synthetic technology because of its faster, cleaner and cost effectiveness than the other conventional and wet chemical methods for the preparation of metal oxide nanoparticles. In the present work, synthesis of metal oxide nanoparticles viz., γ-Fe2O3, NiO, ZnO, CuO and Co-γ-Fe2O3 were carried out by microwave-assisted route through the thermal decomposition of their respective metal oxalate precursors employing polyvinyl alcohol as a fuel. The metal oxide nanoparticles are then characterized for their size and γ to α (in γ-Fe2O3 transition and structure by employing powder X-ray diffraction (XRD pattern, high-temperature X-ray diffraction (HTXRD pattern and Fourier transform infrared (FT-IR spectral studies. The morphology of the samples ranged from nanorods to irregular-shaped particles for different metal oxide samples on the basis of scanning electron microscopy and transmission electron microscopy images. Frequency-dependent dielectric study of the ferrite samples (γ-Fe2O3 and Co-Fe2O3 showed a similar behaviour, where the dielectric constant decreased rapidly with increase in frequency. Possible explanation for this behaviour is given.

  18. Global DNA methylation and oxidative stress biomarkers in workers exposed to metal oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Liou, Saou-Hsing; Wu, Wei-Te; Liao, Hui-Yi [National Institute of Environmental Health Sciences, National Health Research Institutes, Zhunan, Miaoli County, Taiwan (China); Chen, Chao-Yu; Tsai, Cheng-Yen; Jung, Wei-Ting [Department of Chemistry, Fu Jen Catholic University, New Taipei City, Taiwan (China); Lee, Hui-Ling, E-mail: huilinglee3573@gmail.com [Department of Chemistry, Fu Jen Catholic University, New Taipei City, Taiwan (China)

    2017-06-05

    Highlights: • Global methylation and oxidative DNA damage levels in nanomaterial handling workers were assessed. • 8-isoprostane in exhaled breath condensate of workers exposed to nanoparticles was higher. • 8-OHdG was negatively correlated with global methylation. • Exposure to metal oxide nanoparticles may lead to global methylation and DNA oxidative damage. - Abstract: This is the first study to assess global methylation, oxidative DNA damage, and lipid peroxidation in workers with occupational exposure to metal oxide nanomaterials (NMs). Urinary and white blood cell (WBC) 8-hydroxydeoxyguanosine (8-OHdG), and exhaled breath condensate (EBC) 8-isoprostane were measured as oxidative stress biomarkers. WBC global methylation was measured as an epigenetic alteration. Exposure to TiO{sub 2}, SiO{sub 2,} and indium tin oxide (ITO) resulted in significantly higher oxidative biomarkers such as urinary 8-OHdG and EBC 8-isoprostane. However, significantly higher WBC 8-OHdG and lower global methylation were only observed in ITO handling workers. Significant positive correlations were noted between WBC and urinary 8-OHdG (Spearman correlation r = 0.256, p = 0.003). Furthermore, a significant negative correlation was found between WBC 8-OHdG and global methylation (r = −0.272, p = 0.002). These results suggest that exposure to metal oxide NMs may lead to global methylation, DNA oxidative damage, and lipid peroxidation.

  19. Metal Phosphate-Supported Pt Catalysts for CO Oxidation

    Science.gov (United States)

    Qian, Xiaoshuang; Qin, Hongmei; Meng, Tao; Lin, Yi; Ma, Zhen

    2014-01-01

    Oxides (such as SiO2, TiO2, ZrO2, Al2O3, Fe2O3, CeO2) have often been used to prepare supported Pt catalysts for CO oxidation and other reactions, whereas metal phosphate-supported Pt catalysts for CO oxidation were rarely reported. Metal phosphates are a family of metal salts with high thermal stability and acid-base properties. Hydroxyapatite (Ca10(PO4)6(OH)2, denoted as Ca-P-O here) also has rich hydroxyls. Here we report a series of metal phosphate-supported Pt (Pt/M-P-O, M = Mg, Al, Ca, Fe, Co, Zn, La) catalysts for CO oxidation. Pt/Ca-P-O shows the highest activity. Relevant characterization was conducted using N2 adsorption-desorption, inductively coupled plasma (ICP) atomic emission spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), CO2 temperature-programmed desorption (CO2-TPD), X-ray photoelectron spectroscopy (XPS), and H2 temperature-programmed reduction (H2-TPR). This work furnishes a new catalyst system for CO oxidation and other possible reactions. PMID:28788293

  20. Sonochemical water splitting in the presence of powdered metal oxides.

    Science.gov (United States)

    Morosini, Vincent; Chave, Tony; Virot, Matthieu; Moisy, Philippe; Nikitenko, Sergey I

    2016-03-01

    Kinetics of hydrogen formation was explored as a new chemical dosimeter allowing probing the sonochemical activity of argon-saturated water in the presence of micro- and nano-sized metal oxide particles exhibiting catalytic properties (ThO2, ZrO2, and TiO2). It was shown that the conventional sonochemical dosimeter based on H2O2 formation is hardly applicable in such systems due to catalytic degradation of H2O2 at oxide surface. The study of H2 generation revealed that at low-frequency ultrasound (20 kHz) the sonochemical water splitting is greatly improved for all studied metal oxides. The highest efficiency is observed for relatively large micrometric particles of ThO2 which is assigned to ultrasonically-driven particle fragmentation accompanied by mechanochemical water molecule splitting. The nanosized metal oxides do not exhibit particle size reduction under ultrasonic treatment but nevertheless yield higher quantities of H2. The enhancement of sonochemical water splitting in this case is most probably resulting from better bubble nucleation in heterogeneous systems. At high-frequency ultrasound (362 kHz), the effect of metal oxide particles results in a combination of nucleation and ultrasound attenuation. In contrast to 20 kHz, micrometric particles slowdown the sonolysis of water at 362 kHz due to stronger attenuation of ultrasonic waves while smaller particles show a relatively weak and various directional effects. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. Metal Phosphate-Supported Pt Catalysts for CO Oxidation

    Directory of Open Access Journals (Sweden)

    Xiaoshuang Qian

    2014-12-01

    Full Text Available Oxides (such as SiO2, TiO2, ZrO2, Al2O3, Fe2O3, CeO2 have often been used to prepare supported Pt catalysts for CO oxidation and other reactions, whereas metal phosphate-supported Pt catalysts for CO oxidation were rarely reported. Metal phosphates are a family of metal salts with high thermal stability and acid-base properties. Hydroxyapatite (Ca10(PO46(OH2, denoted as Ca-P-O here also has rich hydroxyls. Here we report a series of metal phosphate-supported Pt (Pt/M-P-O, M = Mg, Al, Ca, Fe, Co, Zn, La catalysts for CO oxidation. Pt/Ca-P-O shows the highest activity. Relevant characterization was conducted using N2 adsorption-desorption, inductively coupled plasma (ICP atomic emission spectroscopy, X-ray diffraction (XRD, transmission electron microscopy (TEM, CO2 temperature-programmed desorption (CO2-TPD, X-ray photoelectron spectroscopy (XPS, and H2 temperature-programmed reduction (H2-TPR. This work furnishes a new catalyst system for CO oxidation and other possible reactions.

  2. Effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films

    International Nuclear Information System (INIS)

    Trejo-Cruz, C.; Mendoza-Galvan, A.; Lopez-Beltran, A.M.; Gracia-Jimenez, M.

    2009-01-01

    The effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films were investigated using spectroscopic ellipsometry in the UV-visible range, reflectance-transmittance spectra at normal incidence in the infrared range, electrical resistivity measurements, and X-ray diffraction. It was found that annealing at 300 o C produces an overall shift to lower photon energies of the optical constant spectra, which is related to the increase in electrical resistivity. The electrical measurements performed in the 25-300 K range show a metallic behavior with large residual resistivity, quantity that increases with annealing temperature and is closely related with the change in the relative intensity of the main diffraction peaks. Also it is shown that under certain conditions of film deposition onto indium-tin oxide, some of its properties can change in a similar way as in air-annealing processing.

  3. Oxygen partial pressure: a key to alloying and discovery in metal oxide--metal eutectic systems

    International Nuclear Information System (INIS)

    Holder, J.D.; Clark, G.W.; Oliver, B.F.

    1978-01-01

    Control of oxygen partial pressure is essential in the directional solidification of oxide--metal eutectic composites by techniques involving gas-solid and gas-liquid interactions. The existence of end components in the eutectic composite is Po 2 sensitive as are melt stoichiometry, solid phase compositions, and vapor losses due to oxidation-volatilization. Simple criteria are postulated which can aid the experimentalist in selecting the proper gas mixture for oxide--metal eutectic composite growth. The Cr 2 O 3 --Mo--Cr systems was used to verify certain aspects of the proposed criteria

  4. Ferromagnetism and interlayer exchange coupling in thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Kienert, Jochen

    2008-07-15

    This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

  5. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  6. Platinum redispersion on metal oxides in low temperature fuel cells

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir; Cerri, Isotta; Nagami, Tetsuo

    2013-01-01

    We have analyzed the aptitude of several metal oxide supports (TiO2, SnO2, NbO2, ZrO2, SiO2, Ta2O5 and Nb2O5) to redisperse platinum under electrochemical conditions pertinent to the Proton Exchange Membrane Fuel Cell (PEMFC) cathode. The redispersion on oxide supports in air has been studied in ...

  7. Comparative metal oxide nanoparticle toxicity using embryonic zebrafish

    OpenAIRE

    Wehmas, Leah C.; Anders, Catherine; Chess, Jordan; Punnoose, Alex; Pereira, Cliff B.; Greenwood, Juliet A.; Tanguay, Robert L.

    2015-01-01

    Engineered metal oxide nanoparticles (MO NPs) are finding increasing utility in the medical field as anticancer agents. Before validation of in vivo anticancer efficacy can occur, a better understanding of whole-animal toxicity is required. We compared the toxicity of seven widely used semiconductor MO NPs made from zinc oxide (ZnO), titanium dioxide, cerium dioxide and tin dioxide prepared in pure water and in synthetic seawater using a five-day embryonic zebrafish assay. We hypothesized tha...

  8. Improved adhesion of metal oxide layer

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention relates to: a method of preparing a coating ink for forming a zinc oxide layer, which method comprises the steps of: a) mixing zinc acetate and AlOH (OAc)2 in water or methanol and b) filtering out solids; a coating ink comprising zinc acetate and AlOH (OAc)2 in aqueous or m...

  9. Graphene composites containing chemically bonded metal oxides

    Indian Academy of Sciences (India)

    (figure 7). We have also been able to bond Al2O3 to graphene by using AlCl3 as the reactant. The oxide film was amor- phous after calcination at 600. ◦. C. We have prepared chemically bonded magnetic Fe3O4 nanoparticles to graphene by functionalizing Fe3O4 by amine, then reacting it with graphene functionalized with.

  10. Application of metal oxide refractories for melting and casting reactive metals

    International Nuclear Information System (INIS)

    Jessen, N.C. Jr.; Holcombe, C.E. Jr.; Townsend, A.B.

    1979-01-01

    Extensive investigations have been conducted to develop metal oxide refractories for containment of molten uranium and uranium alloys. Since uranium and uranium alloys are readily susceptable to the formation of complex oxides, carbides, nitrides, intermetallic compounds, and suboxide reactions, severe problems exist for the production of quality castings. These contamination reactions are dependent on temperature, pressure, and molten metal interfacial reactions. The need for high purity metals to meet specification repeatedly has resulted in the development of improved metal oxide refractories and sophisticated furnace controls. Applications of Y 2 O 3 for use as a crucible and mold coating, precision molds and cores, and high temperature castable ceramics are discussed. Experimental results on melt impurity levels, thermal controls during melting, surface interactions and casting quality are presented

  11. Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

    OpenAIRE

    Wan, Chang Jin; Wang, Wei; Zhu, Li Qiang; Liu, Yang Hui; Feng, Ping; Liu, Zhao Ping; Shi, Yi; Wan, Qing

    2016-01-01

    Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

  12. Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

    Science.gov (United States)

    Zhu, Changqiong

    Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from

  13. Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels.

    Science.gov (United States)

    Subramanian, Balasubramanian; Maruthamuthu, Sundaram; Rajan, Senthilperumal Thanka

    2015-01-01

    Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.%) of approximately 1.5 μm and 3 μm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature.

  14. Thin film pc-Si by aluminium induced crystallization on metallic substrate

    Directory of Open Access Journals (Sweden)

    Cayron C.

    2013-04-01

    Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

  15. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical va- pour deposition using an adducted β-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (~ 550°C), while they grow with a strong (111) orientation as the.

  16. Functional Properties of Polydomain Ferroelectric Oxide Thin Films

    NARCIS (Netherlands)

    Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

    2017-01-01

    The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

  17. Assessment of Cellulose Acetate/Manganese Oxide Thin Film as ...

    Indian Academy of Sciences (India)

    5

    industry during the last few decades, large amounts of chemical compounds and contaminants have emerged to the environment [1]. The analysis of these .... at 4.0°C. To probe the selectivity of the synthesized adsorbents, batch adsorption experiments were performed by adding 10 mg of each thin film (CA/Mn-1 and ...

  18. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    2016-10-07

    Oct 7, 2016 ... important factor in optical communication. The deter- mination of the optical properties of any ... Post-annealing treatment plays a critical role in the final structure and properties of the TMO thin films. ..... A significant success of Wemple and Di Domenico model is that it relates the dispersion energy (Ed).

  19. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  20. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  1. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  2. Synthesis of self-detached nanoporous titanium-based metal oxide

    Energy Technology Data Exchange (ETDEWEB)

    Hu, F. [Advanced Manufacturing Technology Research Center, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University (Hong Kong); Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jiangxi 343001 (China); Wen, Y. [Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jiangxi 343001 (China); Chan, K.C., E-mail: mfkcchan@inet.polyu.edu.hk [Advanced Manufacturing Technology Research Center, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University (Hong Kong); Yue, T.M. [Advanced Manufacturing Technology Research Center, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University (Hong Kong); Zhou, Y.Z. [Jiangxi Key Laboratory of Advanced Ceramic Materials, School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jiangxi 343001 (China); Zhu, S.L.; Yang, X.J. [School of Materials Science and Engineering, Tianjin University, Tianjin 300072 (China)

    2015-09-15

    In this study, self-detached nanoporous titanium-based metal oxide was synthesized for the first time by ultrafast anodization in a fluoride-free electrolyte containing 10% HNO{sub 3}. The nanoporous oxide has through-holes with diameters ranging from 10 to 60 nm. The as-formed oxides are amorphous, and were transformed to crystalline structures by annealing. The performance of a dye sensitized solar cell using nanoporpous Ti–10Zr oxide (TZ10) was further studied. It was found that the TZ10 film could increase both the short-circuit current and the open-circuit photovoltage of the solar cell. The overall efficiency of the solar cell was 6.99%, an increase of 20.7% as compared to that using a pure TiO{sub 2} (P25) film. - Graphical abstract: The nanoporous Ti–xZr(x=10, 30) oxide layers are fabricated by anodizing in a dilute nitric acid solvent. The power conversion efficiency of the DSSC by a covering of a Ti–10Zr thin film is increased by 20.7%, with an η of 7.69% , a short circuit current of 12.4 mA/cm{sup 2}, a open circuit voltage of 0.833 V, and a fill factor of 0.679. - Highlights: • Self-detached nanoporous titanium-based metal (TiZr) oxide was synthesized. • The TiZr oxides have through-hole nanopores with diameters ranging from 10 to 60 nm. • The nanoporous Ti–10Zr oxide can improve the power conversion efficiency of a DSSC.

  3. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  4. High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.

    Science.gov (United States)

    Zhang, Qing; Shao, Shuangshuang; Chen, Zheng; Pecunia, Vincenzo; Xia, Kai; Zhao, Jianwen; Cui, Zheng

    2018-04-12

    A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) (PMSQ) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane (OTS). Photolithographic exposure from backside using bottom gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 μm width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10 8 , maximum mobility of 3.3 cm 2 V -1 s -1 , negligible hysteresis and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high resolution printing displays.

  5. Viscoelastic optical nonlocality of doped cadmium oxide epsilon-near-zero thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luk, Ting S.; De Ceglia, Domenico; Scalora, Michael; Vincenti, Maria A.; Campione, Salvatore; Kelley, Kyle; Maria, Jon-Paul; Keeler, Gordon A.

    2017-08-01

    Optical nonlocalities are elusive and hardly observable in traditional plasmonic materials like noble and alkali metals. Here we experimentally observe and theoretically model viscoelastic nonlocalities in the infrared optical response of a doped, cadmium oxide epsilon-near-zero thin film. The nonlocality is clearly detectable thanks to the low damping rate of conduction electrons and the virtual absence of interband transitions at infrared wavelengths. We describe the motion of conduction electrons using a hydrodynamic model for a viscoelastic fluid, and find excellent agreement with experimental results. The electrons’ elasticity blue-shifts the infrared plasmonic resonance associated with the main epsilon-near-zero mode, and triggers the onset of higher-order resonances due to the excitation of electron-pressure modes above the bulk plasma frequency. We also provide evidence of the existence of nonlocal damping, i.e., viscosity, in the motion of optically-excited conduction electrons using a combination of spectroscopic ellipsometry data and predictions based on the viscoelastic hydrodynamic model.

  6. Single sheet metal oxides and hydroxides

    DEFF Research Database (Denmark)

    Huang, Lizhi

    The synthesis of layered double hydroxides (LDHs) provides a relatively easy and traditional way to build versatile chemical compounds with a rough control of the bulk structure. The delamination of LDHs to form their single host layers (2D nanosheets) and the capability to reassemble them offer ......) Delamination of the LDHs structure (oxGRC12) with the formation of single sheet iron (hydr)oxide (SSI). (3) Assembly of the new 2D nanosheets layer by layer to achieve desired functionalities....

  7. Oxidation kinetics of reaction products formed in uranium metal corrosion

    International Nuclear Information System (INIS)

    Totemeier, T. C.

    1998-01-01

    The oxidation behavior of uranium metal ZPPR fuel corrosion products in environments of Ar-4%O 2 and Ar-20%O 2 were studied using thermo-gravimetric analysis (TGA). These tests were performed to extend earlier work in this area specifically, to assess plate-to-plate variations in corrosion product properties and the effect of oxygen concentration on oxidation behavior. The corrosion products from two relatively severely corroded plates were similar, while the products from a relatively intact plate were not reactive. Oxygen concentration strongly affected the burning rate of reactive products, but had little effect on low-temperature oxidation rates

  8. Oxidation of limonene catalyzed by Metal(Salen) complexes

    OpenAIRE

    Lima, L. F.; Corraza, M. L.; Cardozo-Filho, L.; Márquez-Alvarez, H.; Antunes, O. A. C.

    2006-01-01

    The compound R-(+)limonene is available and cheap than its oxidized products. Consequently, the selective oxidation of R(+)limonene has attracted attention as a promising process for the production of compounds with a higher market value, such as cis/trans-1,2-limoneneoxide, cis/trans-carveol and/or carvone. One of the these processes, described in the recent literature, is submission of R-(+)limonene to an oxidation reaction catalyzed by neutral or cationic Metal(Salen) complexes, in the pre...

  9. Metallic thin film depth measurements by X-ray microanalysis

    International Nuclear Information System (INIS)

    Ng, F.L.; Wei, J.; Lai, F.K.; Goh, K.L.

    2006-01-01

    In this study, a low-cost technique, energy dispersive spectroscopy (EDS), was used to explore the application of X-ray microanalysis in depth determination of metallic films. Al, Ni and Au films with varied thicknesses from 50 to 400 nm were deposited on silicon (Si) substrates by magnetron sputtering. Electron beam energies ranging from 4 to 30 keV were applied while other parameters were kept constant to determine the electron beam energy required to penetrate the films. The effect of the atomic number of the metallic films on the penetration capability of the electron beam was investigated. Based on the experimental results, mathematical models for Al, Ni and Au films were established and the interaction volume was simulated using a Monte Carlo program. The simulations are in good agreement with the experimental results. Al/Ni/Au multilayers were also studied

  10. Carbon monoxide oxidation over three different states of copper: Development of a model metal oxide catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Jernigan, Glenn Geoffrey [California Univ., Berkeley, CA (United States). Dept. of Chemistry

    1994-10-01

    Carbon monoxide oxidation was performed over the three different oxidation states of copper -- metallic (Cu), copper (I) oxide (Cu2O), and copper (II) oxide (CuO) as a test case for developing a model metal oxide catalyst amenable to study by the methods of modern surface science and catalysis. Copper was deposited and oxidized on oxidized supports of aluminum, silicon, molybdenum, tantalum, stainless steel, and iron as well as on graphite. The catalytic activity was found to decrease with increasing oxidation state (Cu > Cu2O > CuO) and the activation energy increased with increasing oxidation state (Cu, 9 kcal/mol < Cu2O, 14 kcal/mol < CuO, 17 kcal/mol). Reaction mechanisms were determined for the different oxidation states. Lastly, NO reduction by CO was studied. A Cu and CuO catalyst were exposed to an equal mixture of CO and NO at 300--350 C to observe the production of N2 and CO2. At the end of each reaction, the catalyst was found to be Cu2O. There is a need to study the kinetics of this reaction over the different oxidation states of copper.

  11. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  12. Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

    Science.gov (United States)

    Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

    2018-04-09

    Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

  13. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  14. Glancing angle deposition of sculptured thin metal films at room temperature

    Science.gov (United States)

    Liedtke, S.; Grüner, Ch; Lotnyk, A.; Rauschenbach, B.

    2017-09-01

    Metallic thin films consisting of separated nanostructures are fabricated by evaporative glancing angle deposition at room temperature. The columnar microstructure of the Ti and Cr columns is investigated by high resolution transmission electron microscopy and selective area electron diffraction. The morphology of the sculptured metallic films is studied by scanning electron microscopy. It is found that tilted Ti and Cr columns grow with a single crystalline morphology, while upright Cr columns are polycrystalline. Further, the influence of continuous substrate rotation on the shaping of Al, Ti, Cr and Mo nanostructures is studied with view to surface diffusion and the shadowing effect. It is observed that sculptured metallic thin films deposited without substrate rotation grow faster compared to those grown with continuous substrate rotation. A theoretical model is provided to describe this effect.

  15. Electrochemical activity of heavy metal oxides in the process of ...

    Indian Academy of Sciences (India)

    Alloys and Steels Volume 25 Issue 5 October 2002 pp 371-373 ... The influence of heavy metal oxides on the chloride induced corrosion of steel reinforcement in concrete was studied. ... Institute of Construction and Architecture of the Slovak Academy of Sciences, Dúbravská cesta 9, 842 20 Bratislava, Slovak Republic ...

  16. Metal complexes of substituted Gable porphyrins as oxidation catalysts

    Science.gov (United States)

    Lyons, James E.; Ellis, Jr., Paul E.; Wagner, Richard W.

    1996-01-01

    Transition metal complexes of Gable porphyrins having two porphyrin rings connected through a linking group, and having on the porphyrin rings electron-withdrawing groups, such as halogen, nitro or cyano. These complexes are useful as catalysts for the oxidation of organic compounds, e.g. alkanes.

  17. Metal-free oxidative coupling of thiols to disulfides using ...

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Chemical Sciences; Volume 123; Issue 4. Metal-free oxidative coupling of thiols to disulfides using guanidinium nitrate or nitro urea in the presence of silica sulfuric acid. Arash Ghorbani-Choghamarani Mohsen Nikoorazm Hamid Goudarziafshar Alireza Shokr Hosein Almasi. Volume 123 Issue 4 ...

  18. Nanostructured Metal Oxides for Stoichiometric Degradation of Chemical Warfare Agents

    Czech Academy of Sciences Publication Activity Database

    Štengl, Václav; Henych, Jiří; Janos, P.; Skoumal, M.

    2016-01-01

    Roč. 236, č. 2016 (2016), s. 239-258 ISSN 0179-5953 R&D Projects: GA ČR(CZ) GAP106/12/1116 Institutional support: RVO:61388980 Keywords : chemical warfare agent * metal nanoparticle * unique surface-chemistry * mesoporous manganese oxide Subject RIV: CA - Inorganic Chemistry Impact factor: 3.930, year: 2016

  19. A novel parameter estimation method for metal oxide surge arrester ...

    Indian Academy of Sciences (India)

    Accurate modelling and exact determination of Metal Oxide (MO) surge arrester parameters are very important for arrester allocation, insulation coordination studies and systems reliability calculations. In this paper, a new technique, which is the combination of Adaptive Particle Swarm Optimization (APSO) and Ant Colony ...

  20. Metal oxide blended ZSM-5 nanocomposites as ethanol sensors

    Indian Academy of Sciences (India)

    Nano-ZSM-5 is synthesized without organic template via microwave-assisted hydrothermal technique. The synthesized nano-ZSM-5 zeolite is blended with metal oxides (ZnO and TiO 2 ) to have novel composites as ethanol sensors. The composites are characterized by X-ray diffraction (XRD) and Fourier transform infrared ...