Adhesion of rhodium films on metallic substrates

Energy Technology Data Exchange (ETDEWEB)

Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

2008-09-01

Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization

Science.gov (United States)

Martinson, Alex B.; Kim, In Soo

2017-09-26

A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.

Transition metal carbide nanocomposite and amorphous thin films

OpenAIRE

Tengstrand, Olof

2014-01-01

This thesis explores thin films of binary and ternary transition metal carbides, in the Nb-C, Ti-Si-C, Nb-Si-C, Zr-Si-C, and Nb-Ge-C systems. The electrical and mechanical properties of these systems are affected by their structure and here both nanocomposite and amorphous thin films are thus investigated. By appropriate choice of transition metal and composition the films can be designed to be multifunctional with a combination of properties, such as low electric resistivity, low contact res...

Density functional study of ferromagnetism in alkali metal thin films

Indian Academy of Sciences (India)

thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

Metal films with imprinted nanostructures by template stripping

DEFF Research Database (Denmark)

Eriksen, René Lynge; Pors, Anders; Dreier, Jes

We present a novel template stripping procedure for fabricating metal films with imprinted nanostructures. The basic idea is to deposit a gold film onto a nano-structured substrate and subsequently strip the film from the substrate surface thereby revealing imprinted nanostructures in the film...... result is a thin gold film with imprinted nano-cavities....

UV laser deposition of metal films by photogenerated free radicals

Science.gov (United States)

Montgomery, R. K.; Mantei, T. D.

1986-01-01

A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

Technique for production of calibrated metal hydride films

International Nuclear Information System (INIS)

Langley, R.A.; Browning, J.F.; Balsley, S.D.; Banks, J.C.; Doyle, B.L.; Wampler, W.R.; Beavis, L.C.

1999-01-01

A technique has been developed for producing calibrated metal hydride films for use in the measurement of high-energy (5--15 MeV) particle reaction cross sections for hydrogen and helium isotopes on hydrogen isotopes. Absolute concentrations of various hydrogen isotopes in the film is expected to be determined to better than ±2% leading to the capacity of accurately measuring various reaction cross sections. Hydrogen isotope concentrations from near 100% to 5% can be made accurately and reproducibly. This is accomplished with the use of high accuracy pressure measurements coupled with high accuracy mass spectrometric measurements of each constituent partial pressure of the gas mixture during loading of the metal occluder films. Various techniques are used to verify the amount of metal present as well as the amount of hydrogen isotopes; high energy ion scattering analysis, PV measurements before, during and after loading, and thermal desorption/mass spectrometry measurements. The most appropriate metal to use for the occluder film appears to be titanium but other occluder metals are also being considered. Calibrated gas ratio samples, previously prepared, are used for the loading gas. Deviations from this calibrated gas ratio are measured using mass spectrometry during and after the loading process thereby determining the loading of the various hydrogen isotopes. These techniques are discussed and pertinent issues presented

Theory of the optical and microwave properties of metal-dielectric films

International Nuclear Information System (INIS)

Sarychev, A.K.; Bergman, D.J.; Yagil, Y.

1995-01-01

We present a detailed theoretical study of the high frequency response of thin, metal-dielectric inhomogeneous films. Semicontinuous metal films are normally prepared by thermal evaporation or sputtering of the metal on an insulating substrate. The optical properties of such films show anomalous phenomena, which are absent in both the bulk metal and the bulk insulator. Our approach is based upon a direct solution of Maxwell's equations, without having to invoke the quasi-static approximation. Electric and magnetic fields outside the film are related to the currents inside the film. The electromagnetic properties of semicontinuous films are described by two Ohmic parameters, in contrast with the usual description by a single complex conductivity. Our theory reproduces most of the known experimental data. For example, we are able to explain a prominent absorption band near the percolation threshold, which was observed previously in such systems, as well as some other peculiar features of the reflectance and transmittance. We find that metal-dieletric films can exhibit very interesting properties when there is a strong skin effect in the metal grains. The surface conductivity has a universal value c/(2π) at the percolation threshold. We predict that under such conditions the absorptance A, as a funciton of the metal concentration, is dome shaped with sharp edges. It has a maximum at the percolation threshold and its value at this point is universal, namely A=0.5, while the reflectance R and transmittance T have the equal universal value R=T=0.25. This approach can be extended to semicontinuous superconducting films. Such films are also expected to have a well defined absorption band near the percolation threshold. We believe that such a threshold can be approached not only by decreasing the superconductor concentration but also by increasing the temperature towards and above the critical temperature

Thin films by metal-organic precursor plasma spray

International Nuclear Information System (INIS)

Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

2009-01-01

While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

A rapid process of Yba2Cu3O7-δ thin film fabrication using trifluoroacetate metal-organic deposition with polyethylene glycol additive

DEFF Research Database (Denmark)

Wu, Wei; Feng, Feng; Shi, Kai

2013-01-01

Trifluoroacetate metal-organic deposition (TFA-MOD) is a promising technique to fabricate YBa2Cu3O7-δ (YBCO) superconducting films. However, its slow pyrolysis process, which usually takes more than 10 h, constitutes a barrier for industrial production. In this study, polyethylene glycol (PEG......) was utilized to reduce the stress generation inside the coated films when the strong pyrolysis reactions happen. With the addition of 30 wt% PEG2000 to the precursor solution, a smooth film surface could be obtained through a rapid pyrolysis process of 15 min. After the optimizations of the crystallization...... and oxygenation processes, mass percentage and molecular weight of PEG additive, YBCO thin films with Jc of about 4.5 MA cm-2 (77 K, self-field) could be routinely fabricated using (20-30) wt% PEG(1000-2000) additive with a total treatment time of about 2 h including the 15 min pyrolysis process time. The effects...

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

International Nuclear Information System (INIS)

Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

1976-02-01

Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

Chirality of magneto-electrodeposited metal film electrodes

International Nuclear Information System (INIS)

Mogi, Iwao; Watanabe, Kazuo

2008-01-01

The chiral electrode behaviors of magneto-electrodeposited (MED) Ag and Cu films were examined for the electrochemical reactions of D-glucose, L-glucose and L-cysteine. The Ag and Cu films were electrodeposited under a magnetic field of 2 T parallel (+2 T) or antiparallel (-2 T) to the faradaic current. For MED films of both Ag and Cu, the oxidation current of L-glucose was larger than that of D-glucose on the +2 T-film electrodes, and the results were opposite on the - 2 T-film electrodes. These facts demonstrate that the MED metal films possess the ability of chiral recognition for D- and L-glucoses. The MED Ag film electrodes also exhibited chiral behavior for the oxidation of L-cysteine

Dewetting Properties of Metallic Liquid Film on Nanopillared Graphene

Science.gov (United States)

Li, Xiongying; He, Yezeng; Wang, Yong; Dong, Jichen; Li, Hui

2014-01-01

In this work, we report simulation evidence that the graphene surface decorated by carbon nanotube pillars shows strong dewettability, which can give it great advantages in dewetting and detaching metallic nanodroplets on the surfaces. Molecular dynamics (MD) simulations show that the ultrathin liquid film first contracts then detaches from the graphene on a time scale of several nanoseconds, as a result of the inertial effect. The detaching velocity is in the order of 10 m/s for the droplet with radii smaller than 50 nm. Moreover, the contracting and detaching behaviors of the liquid film can be effectively controlled by tuning the geometric parameters of the liquid film or pillar. In addition, the temperature effects on the dewetting and detaching of the metallic liquid film are also discussed. Our results show that one can exploit and effectively control the dewetting properties of metallic nanodroplets by decorating the surfaces with nanotube pillars. PMID:24487279

Adherence and scratching resistance of nanometric titania films

International Nuclear Information System (INIS)

Pascoali, S.; Dominguini, L.; Borges, J.B.

2012-01-01

TiO 2 films has been used to extend the wear resistance in bearing, seals for pumps and bone prostheses. In this study was analyzed the conventional hardness and scratch toughness. The scratching test equipment used was developed at the Laboratory of materials Labmat / UFSC. The tests were performed on Titania films deposited on glass plates and ceramics via reactive DC magnetron sputtering. The films were deposited by 10, 15 and 60 min. One of the samples has a titanium metal film of a few nanometers thick between the substrate and the Titania film, the oxide has been deposited for 30 min. At this rang of tests loads the deposited films show good adhesion to substrate, there was no cracking or spalling of the film. (author)

Electrochemical and Antimicrobial Properties of Diamondlike Carbon-Metal Composite Films

Energy Technology Data Exchange (ETDEWEB)

MORRISON, M. L.; BUCHANAN, R. A.; LIAW, P. K.; BERRY, C. J.; BRIGMON, R.; RIESTER, L.; JIN, C.; NARAYAN, R. J.

2005-05-11

Implants containing antimicrobial metals may reduce morbidity, mortality, and healthcare costs associated with medical device-related infections. We have deposited diamondlike carbon-silver (DLC-Ag), diamondlike carbon-platinum (DLC-Pt), and diamondlike carbon-silver-platinum (DLC-AgPt) thin films using a multicomponent target pulsed laser deposition process. Transmission electron microscopy of the DLC-silver and DLC-platinum composite films revealed that the silver and platinum self-assemble into nanoparticle arrays within the diamondlike carbon matrix. The diamondlike carbon-silver film possesses hardness and Young's modulus values of 37 GPa and 331 GPa, respectively. The diamondlike carbon-metal composite films exhibited passive behavior at open-circuit potentials. Low corrosion rates were observed during testing in a phosphate-buffered saline (PBS) electrolyte. In addition, the diamondlike carbon-metal composite films were found to be immune to localized corrosion below 1000 mV (SCE). DLC-silver-platinum films demonstrated exceptional antimicrobial properties against Staphylococcus bacteria. It is believed that a galvanic couple forms between platinum and silver, which accelerates silver ion release and provides more robust antimicrobial activity. Diamondlike carbon-silver-platinum films may provide unique biological functionalities and improved lifetimes for cardiovascular, orthopaedic, biosensor, and implantable microelectromechanical systems.

Influence of metallic surface states on electron affinity of epitaxial AlN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2017-06-15

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

Science.gov (United States)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

Electric field mapping inside metallized film capacitors

DEFF Research Database (Denmark)

Nielsen, Dennis Achton; Popok, Vladimir; Pedersen, Kjeld

2015-01-01

(s) they suffered from accelerated testing. We have prepared film capacitors for analysis by micro-sectioning and verified the quality of the preparation procedure using optical and atomic force microscopy. The potential distribution in the layer structure (alternating 7 µm thick dielectric and 50-100 nm thick...... and durability and serves as verification that failure- and degradation mechanisms remain the same at different stress levels during accelerated testing. In this work we have used Kelvin probe force microscopy (KPFM) to analyze metallized film capacitors with the purpose of determining the degradation mechanism...... metal) of a new capacitor was used as reference. KPFM measurements on the degraded capacitors showed a change in contact potential difference from -0.61V on the reference capacitor to 3.2V on the degraded ones, indicating that corrosion of the metallization had happened. Studies also showed that some...

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.

2010-08-11

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from that of optically thick metallic films. We analyze the optical properties when performing a geometrical transformation that maintains the electrical properties. For one-dimensional patterns of metallic wires, the analysis favors tall and narrow wires. Our design principles remain valid for oblique incidence and readily carry over to two-dimensional patterns. © 2010 American Chemical Society.

Stress in hard metal films

NARCIS (Netherlands)

Janssen, G.C.A.M.; Kamminga, J.D.

2004-01-01

In the absence of thermal stress, tensile stress in hard metal films is caused by grain boundary shrinkage and compressive stress is caused by ion peening. It is shown that the two contributions are additive. Moreover tensile stress generated at the grain boundaries does not relax by ion

A comparison of surface properties of metallic thin film photocathodes

CERN Document Server

Mistry, Sonal; Valizadeh, Reza; Jones, L.B; Middleman, Keith; Hannah, Adrian; Militsyn, B.L; Noakes, Tim

2017-01-01

In this work the preparation of metal photocathodes by physical vapour deposition magnetron sputtering has been employed to deposit metallic thin films onto Cu, Mo and Si substrates. The use of metallic cathodes offers several advantages: (i) metal photocathodes present a fast response time and a relative insensitivity to the vacuum environment (ii) metallic thin films when prepared and transferred in vacuum can offer smoother and cleaner emitting surfaces. The photocathodes developed here will ultimately be used in S-band Normal Conducting RF (NCRF) guns such as that used in VELA (Versatile Electron Linear Accelerator) and the proposed CLARA (Compact Linear Accelerator for Research and Applications) Free Electron Laser test facility. The samples grown on Si substrates were used to investigate the morphology and thickness of the film. The samples grown onto Cu and Mo substrates were analysed and tested as photocathodes in a surface characterisation chamber, where X-Ray Photoelectron spectroscopy (XPS) was emp...

An optimized In–CuGa metallic precursors for chalcopyrite thin films

Energy Technology Data Exchange (ETDEWEB)

Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

2013-10-31

We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

Metal-insulator transition induced in CaVO3 thin films

International Nuclear Information System (INIS)

Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

2013-01-01

Stoichiometric CaVO 3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO 3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 μA. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (∼60 nm), thin films of CVO (2–4 nm) were more two-dimensional with the V charge state closer to V 4+ .

Nanopatterned Metallic Films for Use As Transparent Conductive Electrodes in Optoelectronic Devices

KAUST Repository

Catrysse, Peter B.; Fan, Shanhui

2010-01-01

We investigate the use of nanopatterned metallic films as transparent conductive electrodes in optoelectronic devices. We find that the physics of nanopatterned electrodes, which are often optically thin metallic films, differs from

CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Energy Technology Data Exchange (ETDEWEB)

Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

2016-08-30

Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

Metal-chelating active packaging film enhances lysozyme inhibition of Listeria monocytogenes.

Science.gov (United States)

Roman, Maxine J; Decker, Eric A; Goddard, Julie M

2014-07-01

Several studies have demonstrated that metal chelators enhance the antimicrobial activity of lysozyme. This study examined the effect of metal-chelating active packaging film on the antimicrobial activity of lysozyme against Listeria monocytogenes. Polypropylene films were surface modified by photoinitiated graft polymerization of acrylic acid (PP-g-PAA) from the food contact surface of the films to impart chelating activity based on electrostatic interactions. PP-g-PAA exhibited a carboxylic acid density of 113 ± 5.4 nmol cm(-2) and an iron chelating activity of 53.7 ± 9.8 nmol cm(-2). The antimicrobial interaction of lysozyme and PP-g-PAA depended on growth media composition. PP-g-PAA hindered lysozyme activity at low ionic strength (2.48-log increase at 64.4 mM total ionic strength) and enhanced lysozyme activity at moderate ionic strength (5.22-log reduction at 120 mM total ionic strength). These data support the hypothesis that at neutral pH, synergy between carboxylate metal-chelating films (pKa(bulk) 6.45) and lysozyme (pI 11.35) is optimal in solutions of moderate to high ionic strength to minimize undesirable charge interactions, such as lysozyme absorption onto film. These findings suggest that active packaging, which chelates metal ions based on ligand-specific interactions, in contrast to electrostatic interactions, may improve antimicrobial synergy. This work demonstrates the potential application of metal-chelating active packaging films to enhance the antimicrobial activity of membrane-disrupting antimicrobials, such as lysozyme.

Thin HTSC films produced by a polymer metal precursor technique

Science.gov (United States)

Lampe, L. v.; Zygalsky, F.; Hinrichsen, G.

In precursors the metal ions are combined with acid groups of polymethacrylic acid (PMAA), polyacrylic acid (PAA) or novolac. Compared to thermal degradation temperature of pure polymers those of precursors are low. Precursors films were patterned by UV lithography. Diffractometric investigations showed that the c-axis oriented epitaxial films of YBa 2Cu 3O x and Bi 2Sr 2CaCu 2O x originated from amorphous metal oxide films, which were received after thermal degradation of the precursor. Transition temperatures and current densities were determined by electric resistivity measurements.

Structural and magentic characterization of rare earth and transition metal films grown on epitaxial buffer films on semiconductor substrates

International Nuclear Information System (INIS)

Farrow, R.F.C.; Parkin, S.S.P.; Speriosu, V.S.; Bezinge, A.; Segmuller, A.P.

1989-01-01

Structural and magnetic data are presented and discussed for epitaxial films of rare earth metals (Dy, Ho, Er) on LaF 3 films on the GaAs(TTT) surface and Fe on Ag films on the GaAs(001) surface. Both systems exhibit unusual structural characteristics which influence the magnetic properties of the metal films. In the case of rare earth epitaxy on LaF 3 the authors present evidence for epitaxy across an incommensurate or discommensurate interface. Coherency strain is not transmitted into the metal which behaves much like bulk crystals of the rare earths. In the case of Fe films, tilted epitaxy and long-range coherency strain are confirmed by X- ray diffractometry. Methods of controlling some of these structural effects by modifying the epitaxial structures are presented

Theoretical investigation of the thermodynamic properties of metallic thin films

International Nuclear Information System (INIS)

Hung, Vu Van; Phuong, Duong Dai; Hoa, Nguyen Thi; Hieu, Ho Khac

2015-01-01

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

Theoretical investigation of the thermodynamic properties of metallic thin films

Energy Technology Data Exchange (ETDEWEB)

Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

2015-05-29

The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence

OpenAIRE

Aslan, Kadir; Malyn, Stuart N.; Zhang, Yongxia; Geddes, Chris D.

2008-01-01

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little ...

Transparent and conductive electrodes by large-scale nanostructuring of noble metal thin-films

DEFF Research Database (Denmark)

Linnet, Jes; Runge Walther, Anders; Wolff, Christian

grid, and nano-wire thin-films [1]. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

Science.gov (United States)

Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

2012-04-07

Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

DEFF Research Database (Denmark)

Linnet, Jes; Runge Walther, Anders; Wolff, Christian

2018-01-01

grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...... solution-processed masks for physical vapor-deposited metal electrodes consisting of hexagonally ordered aperture arrays with scalable aperture-size and spacing in an otherwise homogeneous noble metal thin-film that may exhibit better electrical performance than carbon nanotube-based thin-films...... for equivalent optical transparency. The fabricated electrodes are characterized optically and electrically by measuring transmittance and sheet resistance. The presented methods yield large-scale reproducible results. Experimentally realized thin-films with very low sheet resistance, Rsh = 2.01 ± 0.14 Ω...

Preparation of large-area molecular junctions with metallic conducting Langmuir–Blodgett films

Energy Technology Data Exchange (ETDEWEB)

Mochizuki, Kengo [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan); Ohnuki, Hitoshi, E-mail: ohnuki@kaiyodai.ac.jp [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan); Shimizu, Daisuke [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan); Imakubo, Tatsuro [Department of Materials and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Tsuya, Daiju [National Institute for Materials Science,1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Izumi, Mitsuru [Division of Marine Technology, Tokyo University of Marine Science and Technology, 2-1-6 Etchujima Koto-ku, Tokyo 135-8533 (Japan)

2014-03-03

Metallic conducting Langmuir–Blodgett (LB) films were used as soft electrodes to fabricate molecular junctions with self-assembled monolayers (SAMs) of alkanethiols (CH{sub 3}(CH{sub 2}){sub n−1}SH) on an Au surface. Alkanethiols can form highly ordered, stable dielectric SAMs on metal surfaces over large areas. However, it is difficult to establish electrical contacts on such SAMs, which has limited their application. In this work, we used metallic conducting LB films composed of bis(ethylenedioxy)tetrathiafulvalene and stearic acid as a soft electrode onto alkanethiol SAMs (C{sub n}-SAM, n = 12, 14, 16, 18) to prepare Au/SAM/metal junctions of relatively large size (∼ 15.6 × 10{sup 3} μm{sup 2}). The current density–voltage (J–V) characteristics across the junctions exhibited rectifying behavior with a ratio R of ∼ 5 (R = |J(V)|/|J(− V)| at ± 1 V). The lower transfer rate corresponding to the electron transport from Au to the LB films exhibited nonlinear J–V characteristics, while the higher transfer rate of electrons from the LB film to Au showed linear J–V characteristics. Kelvin probe force microscopy revealed that the work function of the metallic LB films was smaller than that of Au. The observed rectification behavior is probably caused by different electron transport mechanisms between the two current directions. - Highlights: • Metallic Langmuir–Blodgett (LB) films were used as soft electrodes. • Molecular junctions of metal–alkanethiol–LB films were fabricated. • The current–voltage curve across the junctions exhibited rectifying behavior. • This is the first observation for alkanethiol monolayer junctions. • The work function difference between the electrodes induces the rectification.

Optical resonance analysis of reflected long period fiber gratings with metal film overlay

Science.gov (United States)

Zhang, Guiju; Cao, Bing; Wang, Chinua; Zhao, Minfu

2008-11-01

We present the experimental results of a novel single-ended reflecting surface plasma resonance (SPR) based long period fiber grating (LPFG) sensor. A long period fiber grating sensing device is properly designed and fabricated with a pulsed CO2 laser writing system. Different nm-thick thin metal films are deposited on the fiber cladding and the fiber end facet for the excitation of surface plasma waves (SPWs) and the reflection of the transmission spectrum of the LPFG with doubled interaction between metal-dielectric interfaces of the fiber to enhance the SPW of the all-fiber SPR-LPFG sensing system. Different thin metal films with different thicknesses are investigated. The effect of the excited SPW transmission along the fiber cladding-metal interface with silver and aluminum films is observed. It is found that different thicknesses of the metal overlay show different resonant behaviors in terms of resonance peak situation, bandwidth and energy loss. Within a certain range, thinner metal film shows narrower bandwidth and deeper peak loss.

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

2014-01-01

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

2014-09-01

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

Extraordinary light transmission through opaque thin metal film with subwavelength holes blocked by metal disks.

Science.gov (United States)

Li, Wen-Di; Hu, Jonathan; Chou, Stephen Y

2011-10-10

We observed that when subwavelength-sized holes in an optically opaque metal film are completely covered by opaque metal disks larger than the holes, the light transmission through the holes is not reduced, but rather enhanced. Particularly we report (i) the observation of light transmission through the holes blocked by the metal disks up to 70% larger than the unblocked holes; (ii) the observation of tuning the light transmission by varying the coupling strength between the blocking disks and the hole array, or by changing the size of the disks and holes; (iii) the observation and simulation that the metal disk blocker can improve light coupling from free space to a subwavelength hole; and (iv) the simulation that shows the light transmission through subwavelength holes can be enhanced, even though the gap between the disk and the metal film is partially connected with a metal. We believe these finding should have broad and significant impacts and applications to optical systems in many fields.

Reliability assessment for metallized film pulse capacitors with accelerated degradation test

International Nuclear Information System (INIS)

Zhao Jianyin; Liu Fang; Xi Wenjun; He Shaobo; Wei Xiaofeng

2011-01-01

The high energy density self-healing metallized film pulse capacitor has been applied to all kinds of laser facilities for their power conditioning systems, whose reliability is straightforward affected by the reliability level of capacitors. Reliability analysis of highly reliable devices, such as metallized film capacitors, is a challenge due to cost and time restriction. Accelerated degradation test provides a way to predict its life cost and time effectively. A model and analyses for accelerated degradation data of metallized film capacitors are described. Also described is a method for estimating the distribution of failure time. The estimation values of the unknown parameters in this model are 9.066 9 x 10 -8 and 0.022 1. Both the failure probability density function (PDF) and the cumulative distribution function (CDF) can be presented by this degradation failure model. Based on these estimation values and the PDF/CDF, the reliability model of the metallized film capacitors is obtained. According to the reliability model, the probability of the capacitors surviving to 20 000 shot is 0.972 4. (authors)

Preparation of self-supporting thin metal target films

International Nuclear Information System (INIS)

Wang Xiuying; Ge Suxian; Yin Jianhua; Yin Xu; Jin Genming

1989-01-01

The preparation method and equipment for thin metal self-supporting target without oil contamination are described. The influence of target films contaminated by oil vapor on accuracy of nuclear-physics experimental data are also discussed. The analytical results on carbon content in the prepared films of three elements show that the equipment is very effective for eliminating contamination

Metal-insulator transition induced in CaVO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Gu Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Laverock, Jude; Chen, Bo; Smith, Kevin E. [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

2013-04-07

Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

Science.gov (United States)

Park, Sun-Gyu; Kim, Eunseong

2013-03-01

Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

Evaluation of the adhesion strength of diamond films brazed on K-10 type hard metal

Directory of Open Access Journals (Sweden)

Santos Sérgio Ivan dos

2004-01-01

Full Text Available The coating of cutting tools with diamond films considerably increases the tool performance due to the combination of the unique tribological properties of diamond with the bulk properties of the substrate (toughness. The tool performance, however, is strongly related to the adhesion strength between the film and the substrate. In this work our main goal was to propose and to test a procedure, based on a tensile strength test, to evaluate the adhesion strength of a diamond wafer brazed on a hard metal substrate, taking into account the effect of the brazing temperature and time. The temperature range studied was from 800 to 980 °C and the brazing time ranged from 3 to 40 min. The obtained results could be used to optimize the costs and time required to the production of high performance cutting tools with brazed diamond wafers.

Radiation damage in nanostructured metallic films

Science.gov (United States)

Yu, Kaiyuan

High energy neutron and charged particle radiation cause microstructural and mechanical degradation in structural metals and alloys, such as phase segregation, void swelling, embrittlement and creep. Radiation induced damages typically limit nuclear materials to a lifetime of about 40 years. Next generation nuclear reactors require materials that can sustain over 60 - 80 years. Therefore it is of great significance to explore new materials with better radiation resistance, to design metals with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe. Such systems obtain high volume fraction of boundaries, which are considered sinks to radiation induced defects. From the viewpoint of nanomechanics, it is of interest to investigate the plastic deformation mechanisms of nanostructured films, which typically show strong size dependence. By controlling the feature size (layer thickness, twin spacing and grain size), it is applicable to picture a deformation mechanism map which also provides prerequisite information for subsequent radiation hardening study. And from the viewpoint of radiation effects, it is of interest to explore the fundamentals of radiation response, to examine the microstructural and mechanical variations of irradiated nanometals and to enrich the design database. More importantly, with the assistance of in situ techniques, it is appealing to examine the defect generation, evolution, annihilation, absorption and interaction with internal interfaces (layer interfaces, twin boundaries and grain boundaries). Moreover, well-designed nanostructures can also verify the speculation that radiation induced defect density and hardening show clear size dependence. The focus of this thesis lies in the radiation response of Ag/Ni multilayers and nanotwinned Ag

Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

DEFF Research Database (Denmark)

Linnet, Jes; Runge Walther, Anders; Wolff, Christian

2018-01-01

grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

Optical cavity-assisted broadband optical transparency of a plasmonic metal film

International Nuclear Information System (INIS)

Liu, Zhengqi; Nie, Yiyou; Yuan, Wen; Liu, Xiaoshan; Huang, Shan; Gao, Huogui; Gu, Gang; Liu, Guiqiang; Chen, Jing

2015-01-01

We theoretically present a powerful method to achieve a continuous metal film structure with broadband optical transparency via introducing a dielectric Fabry–Pérot (FP) cavity. An incident optical field could be efficiently coupled and confined with the strong localized plasmons by the non-close-packed plasmonic crystal at the input part and could then become re-radiated output via the transmission channel supported by the dielectric cavity. The formed photonic-plasmonic system could therefore make the seamless metal film structure have a superior near-unity transparency (up to 97%) response and a broadband transparent spectrum with bandwidth >245 nm (with transmittance >90%) in the optical regime. The observed optical properties of the proposed structure can be highly tuned via varying the structural parameters. Based on the colloidal assembly method, the proposed plasmonic crystal can be fabricated in a large area. In addition, the achieved optical transparency can be retained in the extremely roughed metal film structure. Thereby, the findings could offer a feasible way to achieve a broadband transparent metal film structure and hold potential applications in transparent electrodes, touch screens and interactive electronics. (paper)

Enhanced and tunable electric dipole-dipole interactions near a planar metal film

Science.gov (United States)

Zhou, Lei-Ming; Yao, Pei-Jun; Zhao, Nan; Sun, Fang-Wen

2017-08-01

We investigate the enhanced electric dipole-dipole interaction of surface plasmon polaritons (SPPs) supported by a planar metal film waveguide. By taking two nitrogen-vacancy (NV) center electric dipoles in diamond as an example, both the coupling strength and collective relaxation of two dipoles are studied with the numerical Green Function method. Compared to two-dipole coupling on a planar surface, metal film provides stronger and tunable coupling coefficients. Enhancement of the interaction between coupled NV center dipoles could have applications in both quantum information and energy transfer investigation. Our investigation provides systematic results for experimental applications based on a dipole-dipole interaction mediated with SPPs on a planar metal film.

TXRF analysis of trace metals in thin silicon nitride films

International Nuclear Information System (INIS)

Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

2000-01-01

As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

Evaluation of space environmental effects on metals and optical thin films on EOIM-3

Energy Technology Data Exchange (ETDEWEB)

Vaughn, J.A.; Linton, R.C.; Finckenor, M.M.; Kamenetzky, R.R.

1995-02-01

Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

Evaluation of space environmental effects on metals and optical thin films on EOIM-3

Science.gov (United States)

Vaughn, Jason A.; Linton, Roger C.; Finckenor, Miria M.; Kamenetzky, Rachel R.

1995-01-01

Metals and optical thin films exposed to the space environment on the Third Flight of the Evaluation of Oxygen Interactions with Materials (EOIM-3) payload, onboard Space Shuttle mission STS-46 were evaluated. The materials effects described in this paper include the effects of space exposure on various pure metals, optical thin films, and optical thin film metals. The changes induced by exposure to the space environment in the material properties were evaluated using bidirectional reflectance distribution function (BRDF), specular reflectance (250 nm to 2500 nm), ESCA, VUV reflectance (120 nm to 200 nm), ellipsometry, FTIR and optical properties. Using these analysis techniques gold optically thin film metal mirrors with nickel undercoats were observed to darken due to nickel diffusion through the gold to the surface. Also, thin film nickel mirrors formed nickel oxide due to exposure to both the atmosphere and space.

Method for nanomodulation of metallic thin films following the replica-antireplica process based on porous alumina membranes

Energy Technology Data Exchange (ETDEWEB)

Palma, J.L. [Departamento de Ciencias Básicas, Facultad de Ingeniería, Universidad Central de Chile, Santa Isabel 1186, 8330601 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile); Denardin, J.C.; Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 9170124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), 9170124 Santiago (Chile)

2017-03-15

In this paper we have introduced a method for modulation of metallic thin films by sputtering of metals on anodized aluminum templates. Using a high deposition rate during deposition of the non-magnetic metal on the Al pattern, we have separated the two metallic surfaces and, thus, imprinted a pattern of nanohills on a non-magnetic metallic film, such as Au, Ag or Cu. The morphology of the nanostructured metallic films was determined by scanning electron microscopy. Thus, we have confirmed that the ordering degree of the Al template remained after the replication process. Additionally, and as an example of use of these films, we have prepared Supermalloy thin films deposited by sputtering onto these nanostructured non-magnetic metals. The room temperature magnetic behavior of these thin films is also studied. Interestingly, we have found that when the external magnetic field is applied out of plane of the substrate, the coercivity increases linearly as we increase the radius of the nanohills. These soft magnetic films can open new opportunities for magnetic field sensor applications. - Highlights: • A very soft magnetic film is investigated on ordered nanohills. • It is possible to imprint a metallic pattern directly from the etched aluminum foil. • These nanopatterned substrates add an additional degree of freedom. • A method for modulation of metallic thin films.

Optical properties of metallic multi-layer films

International Nuclear Information System (INIS)

Dimmich, R.

1991-09-01

Optical properties of multi-layer films consisting of alternating layers of two different metals are studied on the basis of the Maxwell equations and the Boltzmann transport theory. The influence of free-electron scattering at the film external surface and at the interfaces is taken into account and considered as a function of the electromagnetic field frequency and the structure modulation wavelength. Derived formulas for optical coefficients are valid at low frequencies, where the skin effect is nearly classical, as well as in the near-infrared, visible and ultraviolet spectral ranges, where the skin effect has the anomalous nature. It is shown that the obtained results are apparently dependent on the values of the scattering parameters. What is more, the oscillatory nature of analyzed spectra is observed, where the two oscillation periods may appear on certain conditions. The oscillations result from the electron surface and interface scattering and their amplitudes and periods depend on the boundary conditions for free-electron scattering. Finally, the application of the interference phenomenon in dielectric layers is proposed to obtain the enhancement of the non distinct details which can appear in optical spectra of metallic films. (author). 31 refs, 6 figs

Simple Methods for Production of Nanoscale Metal Oxide Films from Household Sources

Science.gov (United States)

Campbell, Dean J.; Baliss, Michelle S.; Hinman, Jordan J.; Ziegenhorn, John W.; Andrews, Mark J.; Stevenson, Keith J.

2013-01-01

Production of thin metal oxide films was recently explored as part of an outreach program with a goal of producing nanoscale structures with household items. Household items coated with various metals or titanium compounds can be heated to produce colorful films with nanoscale thicknesses. As part of a materials chemistry laboratory experiment…

Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

DEFF Research Database (Denmark)

Christiansen, Alexander Bruun; Caringal, Gideon Peter; Clausen, Jeppe Sandvik

2015-01-01

Although metals are commonly shiny and highly reflective, we here show that thin metal films appear black when deposited on a dielectric with antireflective moth-eye nanostructures. The nanostructures were tapered and close-packed, with heights in the range 300-600 nm, and a lateral, spatial...... frequency in the range 5-7 mu m(-1). A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed...... to a gradient effect causing the metal film to be antireflective, analogous to the mechanism in dielectrics and semiconductors. We find that the investigated nanostructures have too large spatial frequency to facilitate efficient coupling to the otherwise non-radiating surface plasmons. Applications...

Block Copolymer-Templated Approach to Nanopatterned Metal-Organic Framework Films.

Science.gov (United States)

Zhou, Meimei; Wu, Yi-Nan; Wu, Baozhen; Yin, Xianpeng; Gao, Ning; Li, Fengting; Li, Guangtao

2017-08-17

The fabrication of patterned metal-organic framework (MOF) films with precisely controlled nanoscale resolution has been a fundamental challenge in nanoscience and nanotechnology. In this study, nanopatterned MOF films were fabricated using a layer-by-layer (LBL) growth method on functional templates (such as a bicontinuous nanoporous membrane or a structure with highly long-range-ordered nanoscopic channels parallel to the underlying substrate) generated by the microphase separation of polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) block copolymers. HKUST-1 can be directly deposited on the templates without any chemical modification because the pyridine groups in P2VP interact with metal ions via metal-BCP complexes. As a result, nanopatterned HKUST-1 films with feature sizes below 50 nm and controllable thicknesses can be fabricated by controlling the number of LBL growth cycles. The proposed fabrication method further extends the applications of MOFs in various fields. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

International Nuclear Information System (INIS)

Nagata, T.; Haemori, M.; Chikyow, T.

2009-01-01

The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

Energy Technology Data Exchange (ETDEWEB)

Nagata, T.; Haemori, M.; Chikyow, T. [Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2009-05-15

The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

Pulsed laser planarization of metal films for multilevel interconnects

International Nuclear Information System (INIS)

Tuckerman, D.B.; Schmitt, R.L.

1985-05-01

Multilevel interconnect schemes for integrated circuits generally require one or more planarization steps, in order to maintain an acceptably flat topography for lithography and thin-film step coverage on the higher levels. Traditional approaches have involved planarization of the interlevel insulation (dielectric) layers, either by spin-on application (e.g., polyimide), or by reflow (e.g., phosphosilicate glass). We have pursued an alternative approach, in which each metal level is melted (hence planarized) using a pulsed laser prior to patterning. Short (approx.1 μs) pulses are used to preclude undesirable metallurgical reactions between the film, adhesion or barrier layer, and dielectric layer. Laser planarization of metals is particularly well suited to multilevel systems which include ground or power planes. Results are presented for planarization of gold films on SiO 2 dielectric layers using a flashlamp-pumped dye laser. The pulse duration is approx.1 μs, which allows the heat pulse to uniformly penetrate the gold while not penetrating substantially through the underlying SiO 2 (hence not perturbing the lower levels of metal). Excellent planarization of the gold films is achieved (less than 0.1 μm surface roughness, even starting with extreme topographic variations), as well as improved conductivity. To demonstrate the process, numerous planarized two-layer structures (transmission lines under a ground plane) were fabricated and characterized. 9 refs., 2 figs

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

Science.gov (United States)

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin film pc-Si by aluminium induced crystallization on metallic substrate

Directory of Open Access Journals (Sweden)

Cayron C.

2013-04-01

Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

DEFF Research Database (Denmark)

Hansen, Christian Rein; Sørensen, Thomas Just; Glyvradal, Magni

2009-01-01

By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum....... By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers...

Fracture characterization of inhomogeneous wrinkled metallic films deposited on soft substrates

Science.gov (United States)

Kishida, Hiroshi; Ishizaka, Satoshi; Nagakura, Takumi; Suzuki, Hiroaki; Yonezu, Akio

2017-12-01

This study investigated the fracture properties of wrinkled metallic films on a polydimethylsiloxane (PDMS) soft substrate. In particular, the crack density of the wrinkled film during tensile deformation was examined. In order to achieve better deformability of metallic thin films, a method to fabricate a wrinkled thin film on a PDMS soft substrate was first established. The copper (Cu) nano-film fabricated in this study possessed a wrinkled geometry, which plays a critical role in determining the extent of large elastic deformation. To create the wrinkled structure, wet-etching with a polymeric sacrificial layer was used. A sacrificial layer was first deposited onto a silicone rubber sheet. During the curing process of the layer, a compressive strain was applied such that the hardened surface layer buckled, and a wrinkled form was obtained. Subsequently, a PDMS solution was used to cover the layer in order to form a wrinkled PDMS substrate. Finally, the Cu film was deposited onto the wrinkled PDMS, such that the wrinkled Cu film on a soft PDMS substrate was fabricated. The use of uni-axial tensile tests resulted in film crack generation at the stress concentration zone in the wrinkled structure of the films. When the tensile loading was increased, the number of cracks increased. It was found that the increase in crack density was strongly related to the inhomogeneous nature of the wrinkled structure. Such a trend in crack density was investigated using FEM (finite element method) computations, such that this study established a simple mechanical model that may be used to predict the increase in crack density during tensile deformation. This model was verified through several experiments using various wrinkle patterns. The proposed mechanical model may be useful to predict the crack density of a wrinkled metallic film subject to tensile loading.

Analytical approximate equations for the resistivity and its temperature coefficient in thin polycrystalline metallic films

International Nuclear Information System (INIS)

Tellier, C.R.; Tosser, A.J.

1977-01-01

In the usual thickness range of sputtered metallic films, analytical linearized approximate expressions of polycrystalline film resistivity and its t.c.r. are deduced from the Mayadas-Shatzkes theoretical equations. A good experimental fit is observed for Al rf sputtered metal films. (orig.) [de

Synthesis of metal-organic framework films by pore diffusion method

Science.gov (United States)

Murayama, Naohiro; Nishimura, Yuki; Kajiro, Hiroshi; Kishida, Satoru; Kinoshita, Kentaro; Tottori Univ Team; Nippon Steel; Sumitomo Metal Co. Collaboration; Tottori Integrated Frontier Resaerch Center (Tifrec) Collaboration; Tottori University Electronic Display Resaerch Center (Tedrec) Collaboration

Metal-organic frameworks (MOFs) presents high controllability in designing the nano-scale pore, and this enable molecular storages, catalysts, gas sensors, gas separation membranes, and electronic devices for next-generation. Therefore, a simple method for film synthesis of MOFs compared with conventional methods [1] is strongly required. In this paper, we provide pore diffusion method, in which a substrate containing constituent metals of MOF is inserted in solution that includes only linker molecules of MOF. As a result, 2D growth of MOF was effectively enhanced, and the formation of flat and dense MOF films was attained. The growth time, t, dependence of film thickness, d, can be expressed by the relation of d = Aln(t + 1) + B, where A and B are constants. It means that ionized coppers diffuse through the pores of MOFs and the synthesis reaction proceeds at the MOF/solvent interface. We demonstrated the fabrication of a HKUST-1/Cu-TPA hetero structure by synthesizing a Cu-TPA film continuously after the growth of a HKUST-1 film on the CuOx substrate.

Micro-layers of polystyrene film preventing metal oxidation: implications in cultural heritage conservation

Science.gov (United States)

Giambi, Francesca; Carretti, Emiliano; Dei, Luigi; Baglioni, Piero

2014-12-01

Protection of surfaces directly exposed to the detrimental action of degradative agents (i.e. oxygen, air pollutants and bacteria) is one of the most important challenges in the field of conservation of works of art. Metallic objects are subjected to specific surface corrosion phenomena that, over the years, make mandatory the research of innovative materials that should avoid the direct contact between the metal surface and the weathering agents. In this paper, the set-up, characterisation and application of a new reversible material for preserving metal artefacts are reported. Micro-layers constituted of low-adhesive polystyrene (PS) films obtained from recycling waste packaging materials made of expanded PS were studied. The morphology and thickness of PS films were characterised by optical, atomic force and scanning electron microscopy (SEM). A further check on thickness was carried out by means of visible spectrophotometry doping the films with a hydrophobic dye. Thermal properties of the PS micro-layers were studied by means of differential scanning calorimetry coupled with optical microscopy. Permeability of the PS films to water vapour was also determined. The potential of the low-adhesive PS films, that enabled an easy removal in case of film deterioration, for preventing metal oxidation was investigated on brass specimens by simulating standard artificial corrosion programmes. Morphological and chemical (coupling the energy-dispersive X-rays spectrometry to SEM measurements) analyses carried out on these metal samples showed promising results in terms of surface protection against corrosion.

Electrical resistivity of thin metal films

CERN Document Server

Wissmann, Peter

2007-01-01

The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

Characterization of quaternary metal oxide films by synchrotron x-ray fluorescence microprobe

Energy Technology Data Exchange (ETDEWEB)

Perry, D.L.; Thompson, A.C.; Russo, R.E. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

A high demand for thin films in industrial technology has been responsible for the creation of new techniques for the fabrication of such films. One highly effective method for the syntheses of variable composition thin films is pulsed-laser deposition (PLD). The technique has a large number of characteristics which make it an attractive approach for making films. It offers rapid deposition rates, congruent material transfer, simple target requirements from which to make the films, in situ multilayer deposition, and no gas composition or pressure requirements. Additionally, the technique can also afford crystalline films and films with novel structures. Pulsed-laser deposition can be used to make films of semiconductors, insulators, high-temperature superconductors, diamond-like films, and piezoelectric materials. Quaternary metal oxides involving calcium, nickel, and potassium have been shown to be quite effective in the catalysis of coal gasification and methane coupling. One approach to incorporating all three of the metal oxides into one phase is the use of laser ablation to prepare films of the catalysts so that they may be used for coatings, smooth surfaces on which to conduct detailed studies of gas-solid interface reactions that are involved in catalytic processes, and other applications. The problem of dissimilar boiling points of the three metal oxides system is overcome, since the laser ablation process effects the volatilization of all three components from the laser target essentially simultaneously. There is strong interest in gaining an understanding of the chemical and morphological aspects of the films that are deposited. Phenomena such as lattice defects and chemical heterogeneity are of interest. The experimental data discussed here are restricted to the matrix homogeneity of the films themselves for films which were void of microparticles.

Stabilisation of late transition metal and noble metal films in hexagonal and body centred tetragonal phases by epitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Hueger, E.

2005-08-26

In this work ultrathin metallic films with a crystal phase different to their natural bulk structure were produced by hetero-epitaxial growth on metallic substrates. A further aim of this work was to understand the initiation, growth and stability of crystal phase modifications of these films. there exist cases where the films turn beyond the pseudomorphic-growth to a crystal phase different from their natural bulk structure. The present work presents and discusses such a case in addition to the general phenomenon of pseudomorphic-growth. In particular it is shown that metals whose natural phase is face centred cubic (fcc) can be grown in body centred tetragonal (bct) or hexagonal close packed (hcp) phases in the form of thin films on (001) surfaces of appropriate substrates. The growth behavior, electron diffraction analysis, appearance conditions, geometric fit considerations, examples and a discussion of the phase stability of non-covered films and superlattices is given reviewing all epitaxial-systems whose diffraction pattern can be explained by the hexagonal or pseudomorphic bct phase. (orig.)

Structural studies of Langmuir-Blodgett films containing rare-earth metal cations

DEFF Research Database (Denmark)

Khomutov, G.B.; Antipina, M.N.; Bykov, I.V.

2002-01-01

Comparative structural study of gadolinium stearate Langmuir-Blodgett (LB) films formed by monolayer deposition from either aqueous gadolinium acetate or gadolinium chloride solutions have been carried out. Structure of the films was characterized by X-ray diffraction, Fourier transform infrared...... spectroscopy, high-energy electron diffraction, atomic force microscopy and scanning electron microscopy. It was found that when subphase pH had a value at which all monolayer stearic acid molecules were ionized and bound with Gd3+ cations (pH > 5), the LB films deposited from gadolinium acetate and gadolinium....... The data obtained indicate that the control of multivalent metal cations complexes formation in the subphase and at the monolayer surface can be an instrument for optimization, the conditions to form metal-containing LB film with regulated structure and properties....

Nanocluster metal films as thermoelectric material for radioisotope mini battery unit

International Nuclear Information System (INIS)

Borisyuk, P.V.; Krasavin, A.V.; Tkalya, E.V.; Lebedinskii, Yu.Yu.; Vasiliev, O.S.; Yakovlev, V.P.; Kozlova, T.I.; Fetisov, V.V.

2016-01-01

The paper is devoted to studying the thermoelectric and structural properties of films based on metal nanoclusters (Au, Pd, Pt). The experimental results of the study of single nanoclusters’ tunneling conductance obtained with scanning tunneling spectroscopy are presented. The obtained data allowed us to evaluate the thermoelectric power of thin film consisting of densely packed individual nanoclusters. It is shown that such thin films can operate as highly efficient thermoelectric materials. A scheme of miniature thermoelectric radioisotope power source based on the thorium-228 isotope is proposed. The efficiency of the radioisotope battery using thermoelectric converters based on nanocluster metal films is shown to reach values up to 1.3%. The estimated characteristics of the device are comparable with the parameters of up-to-date radioisotope batteries based on nickel-63.

Tactile Sensing From Laser-Ablated Metallized PET Films

KAUST Repository

Nag, Anindya; Mukhopadhyay, Subhas Chandra; Kosel, Jü rgen

2016-01-01

This paper reports the design, fabrication, and implementation of a novel sensor patch developed from commercial polyethylene terephthalate films metallized with aluminum on one side. The aluminum was ablated with laser to form interdigitated

Surface Plasmon Waves on Thin Metal Films.

Science.gov (United States)

Craig, Alan Ellsworth

Surface-plasmon polaritons propagating on thin metal films bounded by dielectrics of nearly equal refractive indexes comprise two bound modes. Calculations indicate that, while the modes are degenerate on thick films, both the real and the imaginary components of the propagation constants for the modes split into two branches on successively thinner films. Considering these non-degenerate modes, the mode exhibiting a symmetric (antisymmetric) transverse profile of the longitudinally polarized electric field component, has propagation constant components both of which increase (decrease) with decreasing film thickness. Theoretical propagation constant eigenvalue (PCE) curves have been plotted which delineate this dependence of both propagation constant components on film thickness. By means of a retroreflecting, hemispherical glass coupler in an attenuated total reflection (ATR) configuration, light of wavelength 632.8 nm coupled to the modes of thin silver films deposited on polished glass substrates. Lorentzian lineshape dips in the plots of reflectance vs. angle of incidence indicate the presence of the plasmon modes. The real and imaginary components of the propagation constraints (i.e., the propagation constant and loss coefficient) were calculated from the angular positions and widths of the ATR resonances recorded. Films of several thicknesses were probed. Results which support the theoretically predicted curves were reported.

Surface plasmon—polaritons on ultrathin metal films

International Nuclear Information System (INIS)

Quan Jun; Zhang Jun; Shao Le-Xi; Tian Ying

2011-01-01

We discuss the surface plasmon—polaritons used for ultrathin metal films with the aid of linear response theory and make comparisons with the known result given by Economou E N. In this paper we consider transverse electromagnetic fields and assume that the electromagnetic field in the linear response formula is the induced field due to the current of the electrons. It satisfies the Maxwell equation and thus we replace the current (charge) term in the Maxwell equation with the linear response expectation value. Finally, taking the external field to be zero, we obtain the dispersion relation of the surface plasmons from the eigenvalue equation. In addition, the charge-density and current-density in the z direction on the surface of ultrathin metal films are also calculated. The results may be helpful to the fundamental understanding of the complex phenomenon of surface plasmon-polaritons. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

2007-09-15

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

International Nuclear Information System (INIS)

Kim, Sang Woo; Yoon, Chong S.

2007-01-01

Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

Percolation-enhanced nonlinear scattering from semicontinuous metal films

Science.gov (United States)

Breit, M.; von Plessen, G.; Feldmann, J.; Podolskiy, V. A.; Sarychev, A. K.; Shalaev, V. M.; Gresillon, S.; Rivoal, J. C.; Gadenne, P.

2001-03-01

Strongly enhanced second-harmonic generation (SHG), which is characterized by nearly isotropic distribution, is observed for gold-glass films near the percolation threshold. The diffuse-like SHG scattering, which can be thought of as nonlinear critical opalescence, is in sharp contrast with highly collimated linear reflection and transmission from these nanostructured semicontinuous metal films. Our observations, which can be explained by giant fluctuations of local nonlinear sources for SHG, verify recent predictions of percolation-enhanced nonlinear scattering.

Investigation of the electrocatalytic activity for oxygen reduction of sputter deposited mixed metal films

International Nuclear Information System (INIS)

Schumacher, L.C.; Holzheuter, I.B.; Nucara, M.C.; Dignam, M.J.

1989-01-01

Sputter-deposited films of silver with lead, manganese and nickel have been studied as possible oxygen reduction electrocatalysts using cyclic voltammetry, rotating disc studies, steady-state polarization and Auger analysis. In general, the Ag-Pb and Ag-Mn films display superior electrocatalytic activity for O 2 reduction, while the Ag-Ni films' performance is inferior to that of pure Ag. For the Ag-Pb films, which show the highest electrocatalytic activity, the mixed metal films display oxidation-reduction behavior which is not simply a superposition of that of the separate metals, and suggests a mechanism for the improved behavior

Oxygen effect on the work function of electropositive metal films adsorbed on 4d and 5d-transition metals

International Nuclear Information System (INIS)

Kultashev, O.K.; Makarov, A.P.; Rozhkov, S.E.

1976-01-01

The thermionic emission method was used to study the effect of oxygen upon the work function of films of electropositive metals, Sc, Y, La and Ba on some monocrystal and polycrystalline specimens of 4d- and 5d-transition metals of groups 4-8 of the Periodic system. It was revealed that when the supports were polycrystalline and monocrystalline specimens of transition metals of Group 5 (niobium and tantalum), the work function phi of films of electropositive adsorbates dropped substantially as compared, e.g., to the phi values on the same faces of tungsten. When the concentration of the electropositive adsorbate exceeds the optimum value (in the absence of oxygen), oxygen exerts an appreciably activating action upon the work function phi of films of electropositive adsorbates on transition metals of the Groups 7 and 8. The activating action of oxygen is assumed to be due to a possibility of formation of surface interstitial structures

Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni, E-mail: gz3e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Hildebrand, Helga; Schmuki, Patrik [Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)

2013-11-11

The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy

DEFF Research Database (Denmark)

Jepsen, Peter Uhd; Fischer, Bernd M.; Thoman, Andreas

2006-01-01

We investigate the dielectric properties of a thin VO2 film in the terahertz frequency range in the vicinity of the semiconductor-metal phase transition. Phase-sensitive broadband spectroscopy in the frequency region below the phonon bands of VO2 gives insight into the conductive properties...... of the film during the phase transition. We compare our experimental data with models proposed for the evolution of the phase transition. The experimental data show that the phase transition occurs via the gradual growth of metallic domains in the film, and that the dielectric properties of the film...

Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films

International Nuclear Information System (INIS)

Biswas, Abhijit; Jeong, Yoon Hee

2015-01-01

Strong spin-orbit coupled 5d transition metal based ABO 3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO 3 . Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO 3 thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics

Semiconductor/metal nanocomposites formed by in situ reduction method in multilayer thin films

International Nuclear Information System (INIS)

Song Yanli; Wang Enbo; Tian Chungui; Mao Baodong; Wang Chunlei

2009-01-01

A layer-by-layer adsorption and in situ reduction method was adopted for synthesizing semiconductor/metal nanocomposites in multilayer ultra-thin films. Alternate adsorption of ZnO nanoparticles modified with poly(ethyleneimine), hydrogentetrachloroaurate and poly(styrenesulfonate) sodium results in the formation of ZnO/AuCl 4 - -loaded multilayer films. In situ reduction of the incorporated metal ions by heating yields ZnO/Au nanocomposites in the films. UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy were used to characterize the components of the composite films. UV-vis spectra indicate regular growth of the films. The electrochemistry behavior of the multilayer films was studied in detail on indium tin oxide electrode. The combined results suggest that the layer-by-layer adsorption and subsequent reduction method used here provides an effective way to synthesize ZnO/Au nanocomposites in the polymer matrix

Metallic and Ceramic Thin Film Thermocouples for Gas Turbine Engines

Directory of Open Access Journals (Sweden)

Otto J. Gregory

2013-11-01

Full Text Available Temperatures of hot section components in today’s gas turbine engines reach as high as 1,500 °C, making in situ monitoring of the severe temperature gradients within the engine rather difficult. Therefore, there is a need to develop instrumentation (i.e., thermocouples and strain gauges for these turbine engines that can survive these harsh environments. Refractory metal and ceramic thin film thermocouples are well suited for this task since they have excellent chemical and electrical stability at high temperatures in oxidizing atmospheres, they are compatible with thermal barrier coatings commonly employed in today’s engines, they have greater sensitivity than conventional wire thermocouples, and they are non-invasive to combustion aerodynamics in the engine. Thin film thermocouples based on platinum:palladium and indium oxynitride:indium tin oxynitride as well as their oxide counterparts have been developed for this purpose and have proven to be more stable than conventional type-S and type-K thin film thermocouples. The metallic and ceramic thin film thermocouples described within this paper exhibited remarkable stability and drift rates similar to bulk (wire thermocouples.

Transparent electrode designs based on optimal nano-patterning of metallic films

KAUST Repository

Catrysse, Peter B.; Fan, Shanhui

2010-01-01

, such as indium tin oxide, are commonly used. There is substantial interest in replacing them, however, motivated by practical problems and recent discoveries regarding the optics of nano-patterned metals. When designing nano-patterned metallic films for use

Characterization of PZT thin films on metal substrates

International Nuclear Information System (INIS)

Dutschke, A.

2008-01-01

Lead zirconate titanate (PbZr x Ti 1-x O 3 ,PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric state due to

Nearly zero transmission through periodically modulated ultrathin metal films

DEFF Research Database (Denmark)

Xiao, Sanshui; Zhang, Jingjing; Peng, Liang

2010-01-01

Transmission of light through an optically ultrathin metal film with a thickness comparable to its skin depth is significant. We demonstrate experimentally nearly-zero transmission of light through a film periodically modulated by a one-dimensional array of subwavelength slits. The suppressed...... optical transmission is due to the excitation of surface plasmon polaritons and the zero-transmission phenomenon is strongly dependent on the polarization of the incident wave....

Laser deposition rates of thin films of selected metals and alloys

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

Thin films of Cu, Zn and Sn as well as mixtures of these elements have been produced by Pulsed Laser Deposition (PLD). The deposition rate of single and multicomponent metallic targets was determined. The strength of PLD is that the stoichiometry of complex compounds, even of complicated alloys...... or metal oxides, can be preserved from target to film. We apply this technique to design films of a mixture of Cu, Zn and Sn, which are constituents of the chalcogenide CZTS, which has a composition close to Cu2ZnSnS4. This compound is expected to be an important candidate for absorbers in new solar cells...... for alloys of the different elements as well as compounds with S will be presented....

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

Science.gov (United States)

Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

2018-04-01

Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal

Energy Technology Data Exchange (ETDEWEB)

Jing, Dapeng [Iowa State Univ., Ames, IA (United States)

2010-01-01

The work presented in this thesis mainly focuses on the nucleation and growth of metal thin films on multimetallic surfaces. First, we have investigated the Ag film growth on a bulk metallic glass surface. Next, we have examined the coarsening and decay of bilayer Ag islands on NiAl(110) surface. Third, we have investigated the Ag film growth on NiAl(110) surface using low-energy electron diffraction (LEED). At last, we have reported our investigation on the epitaxial growth of Ni on NiAl(110) surface. Some general conclusions can be drawn as follows. First, Ag, a bulk-crystalline material, initially forms a disordered wetting layer up to 4-5 monolayers on Zr-Ni-Cu-Al metallic glass. Above this coverage, crystalline 3D clusters grow, in parallel with the flatter regions. The cluster density increases with decreasing temperature, indicating that the conditions of island nucleation are far-from-equilibrium. Within a simple model where clusters nucleate whenever two mobile Ag adatoms meet, the temperature-dependence of cluster density yields a (reasonable) upper limit for the value of the Ag diffusion barrier on top of the Ag wetting layer of 0.32 eV. Overall, this prototypical study suggests that it is possible to grow films of a bulk-crystalline metal that adopt the amorphous character of a glassy metal substrate, if film thickness is sufficiently low. Next, the first study of coarsening and decay of bilayer islands has been presented. The system was Ag on NiAl(110) in the temperature range from 185 K to 250 K. The coarsening behavior, has some similarities to that seen in the Ag(110) homoepitaxial system studied by Morgenstern and co-workers. At 185 K and 205 K, coarsening of Ag islands follows a Smoluchowski ripening pathway. At 205 K and 250 K, the terrace diffusion limited Ostwald ripening dominants. The experimental observed temperature for the transition from SR to OR is 205 K. The SR exhibits anisotropic island diffusion and the OR exhibits 1D decay of island

Analysis of the stability of native oxide films at liquid lead/metal interfaces

International Nuclear Information System (INIS)

Lesueur, C.; Chatain, D.; Gas, P.; Bergman, C.; Baque, F.

2002-01-01

The interface between liquid lead and different metallic solids (pure metals: Al, Fe and Ni, and T91 steel) was investigated below 400 deg C under ultrahigh vacuum (UHV) by wetting experiments. The aim was to check the physical stability of native oxide films grown at the surface of the substrates, along a contact with liquid lead. Two types of metallic substrates were used: i) conventional bulk polycrystals, and ii) nanocrystalline films obtained by e-beam evaporation under UHV. The actual contact between liquid lead and the solid substrates was achieved by preparing lead drops in-situ. Wetting experiments were performed using sessile drop and/or liquid bridge methods. Fresh solid surfaces and former liquid/solid interfaces can be explored by squeezing and stretching a liquid lead bridge formed between two parallel and horizontal substrates. It is shown that the contact with liquid lead produces the detachment of the native oxide films grown on the metallic solids. It is concluded that if oxide coatings are needed to protect a metallic solid from attack by liquid lead, they should be self-renewable. (authors)

Research on Lessening of Bonding Effects Between the Metallic and Non-Metallic Surfaces Through the Graphite Films Deposited with Pulsed Electrical Discharges Process

Science.gov (United States)

Marin, L.; Topala, P.

2017-06-01

The paper presents the results of experimental research on the physics of natural graphite film formation, the establishment of chemical composition and functional properties of the graphite films, formed on metal surfaces, as a result of the action of plasma in the air environment, at a normal pressure, under the electrical discharge in impulse conditions (EDI). The researchings were performed in the frame of doctoral thesis “Research on lessening of the bonding effects between the metallic and nonmetallic surfaces through the graphite films” and aimed to identify the phenomena that occur at the interface metal/ film of graphite, and to identify also the technological applications that it may have the surface treatment for submitting the films of graphite on metallic surfaces achieved through an innovative process of electrical pulsed discharges. After the research works from the PhD theme above mentioned, a number of interesting properties of graphite pellicle have been identified ie reducing of metal surface polarity. This led to drastic decreases for the values of adhesion when bonding of metal surfaces was performed using a structural polyurethane adhesive designed by ICECHIM. Following the thermo-gravimetric analysis, performed of the graphite film obtained by process of electrical pulsed discharges, have been also discovered other interesting properties for this, ie reversible mass additions at specific values of the working temperature Chemical and scanning electron microscopy analysis have revealed that on the metallic surface subjected to electrical pulsed discharges process, outside the graphite film, it is also obtained a series of spatial formation composed of carbon atoms fullerenes type which are responsible for the phenomenon of addition of mass.

Novel mechanisms for self-assembled pattern formation in nanoscopic metal films

Science.gov (United States)

Kalyanaraman, R.; Trice, J.; Favazza, C.; Thomas, D.; Sureshkumar, R.

2007-03-01

Classical hydrodynamic theory of dewetting of spinodally unstable thin films (Vrij, Disc. farad. Soc. 1966) predicts a monotonic increase in patterning length scales with increasing film thickness. We verified this effect for nanoscopic Co metal films following melting by ns laser pulses for thickness regime hFavazza et al. Nanotechnology, 2006). However, a dramatic change is observed beyond this thickness hc, with length scales decreasing with increasing h. This novel behavior arises from strong thickness dependence of heating by ultrafast laser light resulting in thermocapillary effects, whose magnitude and sign are thickness dependent. We modified the classical theory, according to which the instability occurs when the stabilizing capillary force is overcome by destabilizing attractive long-range interactions, to include thermocapillary effects. The modified theory accurately predicts the experimentally observed trend. This result suggests that a variety of new length scales can be accessed by robust self-assembly via dewetting of metal films under ultrafast light.

Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

CERN Document Server

Ma, B; Koritala, R E; Fisher, B L; Markowitz, A R; Erck, R A; Baurceanu, R; Dorris, S E; Miller, D J; Balachandran, U

2003-01-01

Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx 9deg was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55deg . In-plane texture in the ISD MgO films developed in the first approx 0.5 mu m from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the...

Metallic Langmuir and Langmuir-Blodgett films based on TTF derivatives and fatty acid

International Nuclear Information System (INIS)

Ohnuki, H.; Ishizaki, Y.; Suzuki, M.; Desbat, B.; Delhaes, P.; Giffard, M.; Imakubo, T.; Mabon, G.; Izumi, M.

2002-01-01

Recent progress in the metallic conducting Langmuir-Blodgett (LB) films built from TTF derivative and fatty acids is reported. A simple LB method of transferring the mixed Langmuir (L) film of BEDO-TTF (BO) and stearic acid (SA) onto substrates provided metallic conducting LB films. A homogeneous L film formation on the water surface observed by Brewster angle microscope (BAM) is an essential factor for the well-ordered LB films. In the L film, the carboxylate group of fatty acid forms anion layer bringing about a spontaneous formation of mixed valence state (MVS) of BO layer. Similar spontaneous formation was also found in the molecular combination of nonoxygen-substituted donor of EDT-TTF and octadecanesulfonic acid (OS). This type of reaction would be useful for obtaining conducting LB films. For the LB films of BEDO-TTF and stearic acid, we found a negative transverse magnetoresistance at low temperature that was interpreted in the weak localization of a two-dimensional (2D) electronic system based on the well-defined conducting layer

Visible light active TiO2 films prepared by electron beam deposition of noble metals

International Nuclear Information System (INIS)

Hou Xinggang; Ma Jun; Liu Andong; Li Dejun; Huang Meidong; Deng Xiangyun

2010-01-01

TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

POLYMER COMPOSITE FILMS WITH SIZE-SELECTED METAL NANOPARTICLES FABRICATED BY CLUSTER BEAM TECHNIQUE

DEFF Research Database (Denmark)

Ceynowa, F. A.; Chirumamilla, Manohar; Popok, Vladimir

2017-01-01

Formation of polymer films with size-selected silver and copper nanoparticles (NPs) is studied. Polymers are prepared by spin coating while NPs are fabricated and deposited utilizing a magnetron sputtering cluster apparatus. The particle embedding into the films is provided by thermal annealing...... after the deposition. The degree of immersion can be controlled by the annealing temperature and time. Together with control of cluster coverage the described approach represents an efficient method for the synthesis of thin polymer composite layers with either partially or fully embedded metal NPs....... Combining electron beam lithography, cluster beam deposition and thermal annealing allows to form ordered arrays of metal NPs on polymer films. Plasticity and flexibility of polymer host and specific properties added by coinage metal NPs open a way for different applications of such composite materials...

Differential reflectometry of thin film metal oxides on copper, tungsten, molybdenum and chromium

International Nuclear Information System (INIS)

Urban, F.K. III; Hummel, R.E.; Verink, E.D. Jr.

1982-01-01

A differential reflectometry study was undertaken to investigate the characteristics of thin oxide films on metal substrates. The oxides were produced by heating pure metals of copper, tungsten, molybdenum and chromium in dry oxygen. A new 'halfpolishing' technique was applied to obtain specimens with a step in oxide thickness in order to make them suitable for differential reflectometry. It was found that oxides formed this way yielded the same differential reflectograms as by electrochemical oxidation. A mathematical model involving the interaction of light with a thin corrosion product on metal substrates was applied to generate computer calculated differential reflectograms utilizing various optical constants and thicknesses of the assumed film. Three different thickness ranges have been identified. (a) For large film thicknesses, the differential reflectograms are distinguished by a sequence of interference peaks. (b) If the product of thickness and refraction index of the films is smaller than about 40 nm, no interference peaks are present. Any experimentally observed peaks in differential reflectograms of these films are caused entirely by electron interband transitions. (c) In an intermediate thickness range, superposition of interference and interband peaks are observed. (author)

Controlled delamination of metal films by hydrogen loading

Energy Technology Data Exchange (ETDEWEB)

Nikitin, Eugen

2008-11-18

n this work we quantitatively determine the adhesion energy between metal films and their substrates. Therefore a new controlled buckling technique is established, applying the strong compressive in-plane stress that results in thin films clamped on rigid substrates during hydrogen loading. When the elastic energy stored in the H-loaded thin film exceeds the adhesion energy between film and substrate, delamination occurs. At the onset of delamination, a critical hydrogen concentration, a critical stress value and a critical bending of the substrate are present, which are quantitative measures for the adhesion energy and permit its calculation. As the critical values are determined at the onset of delamination, plastic deformation is negligible, which denies the quantitative determination of adhesion energies in conventional test setups. In multilayer-systems, adhesion energies between substrates and films that hardly absorb hydrogen can be measured by the controlled buckling technique, when the films of interest are coated with hydrogen absorbing films (active layer). The measurements are performed easily and can be repeated under the same test conditions, while variables such as the thickness of the coating materials or the boundary surface structure can be varied and optimized. In this work the adhesion energies of different materials on polycarbonate and niobium on sapphire are investigated. (orig.)

Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

Science.gov (United States)

Ramesham, R.; Distefano, S.; Fitzgerald, D.; Thakoor, A. P.; Khanna, S. K.

1987-01-01

Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

Science.gov (United States)

Lin, Zichao; Sun, Fanghong; Shen, Bin

2016-11-01

Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

Energy Technology Data Exchange (ETDEWEB)

Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

2006-07-15

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

International Nuclear Information System (INIS)

Xue Wenbin

2006-01-01

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

Effect of adding Cr on magnetic properties and metallic behavior in MnTe film

International Nuclear Information System (INIS)

Wang, Z.H.; Geng, D.Y.; Gong, W.J.; Li, J.; Li, Y.B.; Zhang, Z.D.

2012-01-01

Mn 1−x Cr x Te films with x = 0, 0.02, and 0.05 was synthesized by pulsed laser deposition and crystallize in hexagonal NiAs-type structure. The spin glass behavior predicted before by Monte Carlo calculation is observed in the MnTe film. This behavior is destroyed by adding Cr in the MnTe film. The temperature dependence of magnetization shows a sharp rise at around 66 K, due to the magneto-elastic coupling. Metallic behavior is observed in the MnTe film in the temperature range 120–220 K, which is ascribed to the magnetic ordering. The metallic behavior disappears with adding Cr, because adding Cr ions destroys the magnetic ordering which is mediated by the sp–d exchange interaction between the Cr ions. - Highlights: ► Mn 1−x Cr x Te films with NiAs-type structure was prepared by pulsed laser deposition. ► The spin glass behavior was observed in MnTe film at low temperature. ► The spin glass behavior was destroyed by adding Cr. ► The temperature dependence of magnetization showed a sharp rise at around 66 K. ► Metallic behavior was observed in MnTe film, which disappeared by adding Cr.

Persistent semi-metal-like nature of epitaxial perovskite CaIrO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Biswas, Abhijit; Jeong, Yoon Hee, E-mail: yhj@postech.ac.kr [Department of Physics, POSTECH, Pohang 790-784 (Korea, Republic of)

2015-05-21

Strong spin-orbit coupled 5d transition metal based ABO{sub 3} oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking, because of the interplay between the Coulomb interactions and strong spin-orbit coupling. Here, we have epitaxially stabilized high quality thin films of perovskite (Pv) CaIrO{sub 3}. Film on the best lattice-matched substrate shows semi-metal-like characteristics. Intriguingly, imposing tensile or compressive strain on the film by altering the underlying lattice-mismatched substrates still maintains semi-metallicity with minute modification of the effective correlation as tensile (compressive) strain results in tiny increases (decreases) of the electronic bandwidth. In addition, magnetoresistance remains positive with a quadratic field dependence. This persistent semi-metal-like nature of Pv-CaIrO{sub 3} thin films with minute changes in the effective correlation by strain may provide new wisdom into strong spin-orbit coupled 5d based oxide physics.

Thin metal films in resistivity-based chemical sensing

Czech Academy of Sciences Publication Activity Database

Podešva, Pavel; Foret, František

2013-01-01

Roč. 9, č. 4 (2013), s. 642-652 ISSN 1573-4110 R&D Projects: GA ČR(CZ) GAP301/11/2055 Institutional support: RVO:68081715 Keywords : voltohmmetric sensing * chemiresistor * thin metal film * gas sensing Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 1.194, year: 2013

Quantum-classical transition in the electron dynamics of thin metal films

International Nuclear Information System (INIS)

Jasiak, R; Manfredi, G; Hervieux, P-A; Haefele, M

2009-01-01

The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy ℎω p ), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

Novel method to deposit metal particles on transition metal oxide films and its application in lithium-ion batteries

International Nuclear Information System (INIS)

Pan Qinmin; Wang Min; Wang Hongbo; Zhao Jianwei; Yin Geping

2008-01-01

A novel method to modify the surfaces of transition metal oxides (MO) film-electrode was proposed in this study. At first, a monolayer of terephthalic acid was covalently bonded to the surfaces of Cu 2 O films. Then silver (Ag) particles were electrodeposited on the monolayer-grafted films by a potential-step process. The resulting Ag-Cu 2 O films exhibited improved electrochemical performance as negative electrodes in lithium-ion batteries compared to the original Cu 2 O films. An increase in electrical contact between Cu 2 O particles was considered to be responsible for the improvement in the electrochemical properties

Characterization of copper thin films prepared by metal self-ion beam sputter deposition

International Nuclear Information System (INIS)

Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

1994-01-01

New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

Electrochemical characterization of Zr-based thin film metallic glass in hydrochloric aqueous solution

International Nuclear Information System (INIS)

Chuang, Ching-Yen; Liao, Yi-Chia; Lee, Jyh-Wei; Li, Chia-Lin; Chu, Jinn P.; Duh, Jenq-Gong

2013-01-01

Recently thin film metallic glass represents a class of promising engineering materials for structural applications. In this work, the Zr-based thin film metallic glass (TFMG) was fabricated on the Si and AISI 420 substrates using a Zr–Cu–Ni–Al alloy and pure Zr metal targets by a pulsed DC magnetron sputtering system. The chemical compositions, crystalline structures, microstructures and corrosion behavior in hydrochloric (HCl) aqueous solutions of Zr-based TFMGs were investigated. The results showed that the surface morphologies of Zr-based TFMG were very smooth. A compact and dense structure without columnar structure was observed. The amorphous structure of Zr-based TFMG was characterized by the X-ray diffractometer and transmission electron microscopy analyses. After the potentiodynamic polarization test, the better corrosion resistance was achieved for the Zr-based TFMG coated AISI 420 in 1 mM HCl aqueous solution. Based on the surface morphologies and chemical analysis results of the corroded surfaces, the pitting, crevice corrosion and filiform corrosion were found. The corrosion mechanisms of the Zr-based TFMG were discussed in this work. - Highlights: ► Zr-based thin film metallic glass with amorphous structure. ► Better corrosion resistance of Zr-based thin film metallic glass observed. ► Pitting, crevice and filiform corrosion reactions revealed. ► The Cu-rich corrosion products found in the pit. ► Nanowire and flaky corrosion products formed adjacent to the filiform corrosion path

Determination of several trace metals in biological materials by PIXE analysis after solvent extraction and polystyrene-film collection

International Nuclear Information System (INIS)

Iwata, Yoshihiro; Korenaga, Tatsumi; Suzuki, Nobuo

1991-01-01

Traces of vanadium, manganese, iron, cobalt, nickel, copper, and zinc were quantitatively extracted with diethyldithiocarbamate (DDTC) in benzene from a digested solution of biological materials and the metal-DDTC complexes were collected into a small amount of polystyrene foam produced by lyophilization of the benzene extract after addition of polystyrene. The polystyrene foam was dissolved in benzene and spread on Mylar film. After drying, a polystyrene film containing metal-DDTC complexes was produced on Mylar film, and then the polystyrene film was peeled from the Mylar film. This film was subjected to PIXE analysis. This method was applied to NBS SRM 1572 citrus leaves and a marine macroalgal sample, and 6 trace metals were simultaneously and accurately determined. (author)

A high-performance, flexible and robust metal nanotrough-embedded transparent conducting film for wearable touch screen panels

Science.gov (United States)

Im, Hyeon-Gyun; An, Byeong Wan; Jin, Jungho; Jang, Junho; Park, Young-Geun; Park, Jang-Ung; Bae, Byeong-Soo

2016-02-01

We report a high-performance, flexible and robust metal nanotrough-embedded transparent conducting hybrid film (metal nanotrough-GFRHybrimer). Using an electro-spun polymer nanofiber web as a template and vacuum-deposited gold as a conductor, a junction resistance-free continuous metal nanotrough network is formed. Subsequently, the metal nanotrough is embedded on the surface of a glass-fabric reinforced composite substrate (GFRHybrimer). The monolithic composite structure of our transparent conducting film allows simultaneously high thermal stability (24 h at 250 °C in air), a smooth surface topography (Rrms touch screen panel (TSP) is fabricated using the transparent conducting films. The flexible TSP device stably operates on the back of a human hand and on a wristband.We report a high-performance, flexible and robust metal nanotrough-embedded transparent conducting hybrid film (metal nanotrough-GFRHybrimer). Using an electro-spun polymer nanofiber web as a template and vacuum-deposited gold as a conductor, a junction resistance-free continuous metal nanotrough network is formed. Subsequently, the metal nanotrough is embedded on the surface of a glass-fabric reinforced composite substrate (GFRHybrimer). The monolithic composite structure of our transparent conducting film allows simultaneously high thermal stability (24 h at 250 °C in air), a smooth surface topography (Rrms touch screen panel (TSP) is fabricated using the transparent conducting films. The flexible TSP device stably operates on the back of a human hand and on a wristband. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07657a

The sensitizing phenomenon of X-ray film in the experiment of metals loaded with deuterium

International Nuclear Information System (INIS)

Chen Suhe; Wang Dalun; Chen Wenjang; Li Yijun; Fu Yibei; Zhang Xinwei

1993-01-01

The sensitizing phenomenon of X-ray film was studied, in metals loaded with deuterium, by a cycle method of temperature and pressure (CMTP). The experimental results showed that the sensitization of X-ray film was derived from the chemical reaction and the anomalous effect of metals loaded with deuterium. (author)

Metal adsorption of gamma-irradiated carboxymethyl cellulose/polyethylene oxide blend films

Science.gov (United States)

El-Naggar, Amal A.; Magida, M. M.; Ibrahim, Sayeda M.

2016-03-01

Blend films of different ratios of carboxymethyl cellulose (CMC)/polyethylene oxide (PEO) were prepared by the solution casting method. To investigate the effect of irradiation on all properties of prepared blend, it was exposed to different gamma irradiation doses (10, 20, and 30 kGy). Physical properties such as gel fraction (GF) (%) and swelling (SW) (%) were investigated. It was found that the GF (%) increases with increasing irradiation dose up to 20 kGy, while SW (%) decreases with an increase in the irradiation doses for all blend compositions. Moreover, the structural and mechanical properties of the prepared films were studied. The results of the mechanical properties obtained showed that there is an improvement in these properties with an increase in both CMC and irradiation dose up to 20 kGy. The efficiency of metal ions uptake was measured using a UV spectrophotometer. The prepared films showed good tendency to absorb and release metal ions from aqueous media. Thus, the CMC/PEO film can be used in agricultural domain.

Levy's distributions for statistical description of fractal structures; discontinuous metal films on dielectric substrates

International Nuclear Information System (INIS)

Dobierzewska-Mozrzymas, E.; Szymczak, G.; Bieganski, P.; Pieciul, E.

2003-01-01

The ranges of statistical description of the systems may be determined on the basis of the inverse power law of the Mandelbrot. The slope of the straight line representing the power law in a double-logarithmic plot, determined as -1/μ (μ being a critical exponent), characterizes the distribution of elements in the system. In this paper, the inverse power law is used to describe the statistical distribution of discontinuous metal films with higher coverage coefficients (near percolation threshold). For these films the critical exponent μ∼1, both the mean value and the variance are infinite. The objects with such microstructure are described according to the Levy distribution; Cauchy, inverse Gauss and inverse gamma distribution, respectively. The experimental histograms are compared with the calculated ones. Inhomogeneous metal films were obtained experimentally, their microstructures were examined by means of electron microscope. On the basis of electron micrographs, the fractal dimensions were determined for the metal films with coverage coefficient ranging from 0.35 to 1.00

Visible light active TiO{sub 2} films prepared by electron beam deposition of noble metals

Energy Technology Data Exchange (ETDEWEB)

Hou Xinggang, E-mail: hou226@163.co [Department of Physics, Tianjin Normal University, Tianjin 300387 (China); Ma Jun [Department of Physics, Tianjin Normal University, Tianjin 300387 (China); Liu Andong [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Dejun; Huang Meidong; Deng Xiangyun [Department of Physics, Tianjin Normal University, Tianjin 300387 (China)

2010-03-15

TiO{sub 2} films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO{sub 2} films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO{sub 2} is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO{sub 2} films by this method is affected by the concentration of impregnating solution.

Calculation of the magnetic anisotropy energy and finite-temperature magnetic properties of transition-metal films

International Nuclear Information System (INIS)

Garibay-Alonso, R; Villasenor-Gonzalez, P; Dorantes-Davila, J; Pastor, G M

2004-01-01

The magnetic anisotropy energy at the interface (IMAE) of Co films deposited on the Pd(111) surface are determined in the framework of a self-consistent, real-space tight-binding method at zero temperature. Significant spin moments are induced at the Pd atoms at the interface which have an important influence on the observed reorientation transitions as a function of Co film thickness. Film-substrate hybridizations are therefore crucial for the magneto-anisotropic behaviour of thin transition-metal films deposited on metallic non-magnetic substrates. Furthermore, using a real-space recursive expansion of the local Green function and within the virtual-crystal approximation we calculate the magnetization curves and the Curie temperature T C for free-standing Fe films

Experimental characterization of electrochemically polymerized polycarbazole film and study of its behavior with different metals contacts

Science.gov (United States)

Srivastava, Aditi; Chakrabarti, P.

2017-12-01

In this paper, we present the method of fabrication, experimental characterization, and comparison of electrical parameters of semiconducting polycarbazole film with different rectifying metals contacts. Electrochemical polymerization and deposition of organic semiconductor, i.e., polycarbazole on ITO-coated glass substrate, were performed using an electrochemical workstation. Experimental characterization of the prepared polymer film was done in respect of morphology, absorption, bandgap, and thickness. The stability and electro-activity of polycarbazole film were verified by the cyclic voltammetric method. Study of the behavior of prepared polycarbazole film with the different metals contacts such as Aluminum, Copper, Tungsten, and Tin has been done using semiconductor device analyzer. Various electrical parameters such as barrier height, ideality factor, and reverse saturation current have been extracted with different metal contacts, and the values were compared and contrasted. The nature of I- V characteristic of polycarbazole film in non-contact mode has also been analyzed using scanning tunneling microscope. The rectifying I- V characteristics obtained with different metals contacts have also been validated by the simulation on Deckbuild platform of the of ATLAS® software tool from Silvaco Inc.

Optimization of film synthesized rare earth transition metal permanent magnet systems

International Nuclear Information System (INIS)

Cadieu, F.J.

1990-01-01

This report reviews work on the optimization of film synthesized rare earth transition metal permanent magnet systems. Topics include: high coercivity in Sm-Fe-Ti-V, Sm-Fe-V, and two element systems; ThMn 12 type pseudobinary SmFe 12 - X T X ; and sputter process control for the synthesis of precisely textured RE-TM magnetic films. (JL)

Evaporation-Driven Deposition of ITO Thin Films from Aqueous Solutions with Low-Speed Dip-Coating Technique.

Science.gov (United States)

Ito, Takashi; Uchiyama, Hiroaki; Kozuka, Hiromitsu

2017-05-30

We suggest a novel wet coating process for preparing indium tin oxide (ITO) films from simple solutions containing only metal salts and water via evaporation-driven film deposition during low-speed dip coating. Homogeneous ITO precursor films were deposited on silica glass substrates from the aqueous solutions containing In(NO 3 ) 3 ·3H 2 O and SnCl 4 ·5H 2 O by dip coating at substrate withdrawal speeds of 0.20-0.50 cm min -1 and then crystallized by the heat treatment at 500-800 °C for 10-60 min under N 2 gas flow of 0.5 L min -1 . The ITO films heated at 600 °C for 30 min had a high optical transparency in the visible range and a good electrical conductivity. Multiple-coating ITO films obtained with five-times dip coating exhibited the lowest sheet (ρ S ) and volume (ρ V ) resistivities of 188 Ω sq -1 and 4.23 × 10 -3 Ω cm, respectively.

Impact of silver metallization and electron irradiation on the mechanical deformation of polyimide films

Science.gov (United States)

Muradov, A. D.; Mukashev, K. M.; Yar-Mukhamedova, G. Sh.; Korobova, N. E.

2017-11-01

The impact of silver metallization and electron irradiation on the physical and mechanical properties of polyimide films has been studied. The metal that impregnated the structure of the polyimide substrate was 1-5 μm. The surface coatings contained 80-97% of the relative silver mirror in the visible and infrared regions. Irradiation was performed at the ELU-6 linear accelerator with an average beam electron energy of 2 MeV, an integral current of up to 1000 μA, a pulse repetition rate of 200 Hz, and a pulse duration of 5 μs. The absorbed dose in the samples was 10, 20, 30, and 40 MGy. The samples were deformed at room temperature under uniaxial tension on an Instron 5982 universal testing system. The structural changes in the composite materials that result from the impact of the physical factors were studied using an X-ray diffractometer DRON-2M in air at 293 K using Cu K α radiation (λαCu = 1.5418 Å). A substantial growth of mechanical characteristics resulting from the film metallization, as compared to the pure film, was observed. The growth of the ultimate strength by Δσ = 105 MPa and the plasticity by Δɛ = 75% is connected with the characteristics of the change of structure of the metallized films and the chemical etching conditions. The electron irradiation of the metallized polyimide film worsens its elastic and strength characteristics due to the formation of new phases in the form of silver oxide in the coating. The concentration of these phases increased with increasing dose, which was also the result of the violation of the ordered material structure, namely, the rupture of polyimide macromolecule bonds and the formation of new phases of silver in the coating. A mathematical model was obtained that predicts the elastic properties of silver metallized polyimide films. This model agrees with the experimental data.

Quantum-classical transition in the electron dynamics of thin metal films

Energy Technology Data Exchange (ETDEWEB)

Jasiak, R; Manfredi, G; Hervieux, P-A [Institut de Physique et Chimie des Materiaux, CNRS and Universite de Strasbourg, BP 43, F-67034 Strasbourg (France); Haefele, M [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France)], E-mail: Giovanni.Manfredi@ipcms.u-strasbg.fr

2009-06-15

The quantum electrons dynamics in a thin metal film is studied numerically using the self-consistent Wigner-Poisson equations. The initial equilibrium is computed from the Kohn-Sham equations at finite temperature, and then mapped into the phase-space Wigner function. The time-dependent results are compared systematically with those obtained previously with a classical approach (Vlasov-Poisson equations). It is found that, for large excitations, the quantum and classical dynamics display the same low-frequency oscillations due to ballistic electrons bouncing back and forth on the film surfaces. However, below a certain excitation energy (roughly corresponding to one quantum of plasmon energy {Dirac_h}{omega}{sub p}), the quantum and classical results diverge, and the ballistic oscillations are no longer observed. These results provide an example of a quantum-classical transition that may be observed with current pump-probe experiments on thin metal films.

Metallic oxide switches using thick film technology

Science.gov (United States)

Patel, D. N.; Williams, L., Jr.

1974-01-01

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Characterization of magnetization processes in nanostructured rare earth-transition metal films

International Nuclear Information System (INIS)

Zheng Guangping; Zhan Yangwen; Liu Peng; Li Mo

2003-01-01

We synthesize rare earth-transition metal (RE-TM) amorphous films using the electrodeposition method (RE=Nd, Gd and TM=Co). Nanocrystructured RE-TM films are prepared by thermal treatment of as-synthesized films below the glass-crystal transition temperature. Based on the magnetoelastic effect, the magnetization processes in nanostructured samples are characterized by acoustic internal friction measurements using the vibrating-reed technique. Since internal friction and the Young's modulus are sensitive to grain boundary and magnetic domains movement, this technique seems to characterize the effects of nanostructures on the magnetization processes in RE-TM films well. We find that the magnetoelastic effect in nanostructured RE-TM film increases with an increase in grain size

High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered target

International Nuclear Information System (INIS)

Muto, Y.; Nakatomi, S.; Oka, N.; Iwabuchi, Y.; Kotsubo, H.; Shigesato, Y.

2012-01-01

Ta-doped SnO 2 films were deposited on glass substrate (either unheated or heated at 200 °C) by reactive magnetron sputtering with a Sn–Ta metal-sintered target using a plasma control unit (PCU) and mid-frequency (mf, 50 kHz) unipolar pulsing. The PCU feedback system precisely controlled the flow of the reactive and sputtering gases (O 2 and Ar, respectively) by monitoring either discharge impedance or the plasma emission of the atomic O* line at 777 nm. The planar target was connected to the switching unit, which was operated in unipolar pulse mode. Power density on the target was maintained at 4.4 W cm −2 during deposition. The lowest obtained resistivity for the films deposited on heated substrate was 6.4 × 10 −3 Ωcm, where the deposition rate was 250 nm min −1 .

Physical and electrical properties of thermal oxidized Sm{sub 2}O{sub 3} gate oxide thin film on Si substrate: Influence of oxidation durations

Energy Technology Data Exchange (ETDEWEB)

Goh, Kian Heng; Haseeb, A.S.M.A.; Wong, Yew Hoong, E-mail: yhwong@um.edu.my

2016-05-01

Growth of 150 nm Sm{sub 2}O{sub 3} films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm{sub 2}O{sub 3} film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm{sub 2}O{sub 3} were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm{sub 2}O{sub 3} from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm{sub 2}O{sub 3} film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15 min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value. - Highlights: • Thermal oxidation of sputtered pure metallic Sm in oxygen ambient • Formation of polycrystalline Sm{sub 2}O{sub 3} and semi-polycrystalline interfacial layers • Optimization of oxidation duration of pure metallic Sm in oxygen ambient • Enhanced electrical performance with smooth surface and increased barrier height.

On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

International Nuclear Information System (INIS)

Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

1986-01-01

Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

Science.gov (United States)

Lugo, J. M.; Oliva, A. I.

2017-02-01

The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

International Nuclear Information System (INIS)

Wadati, H.; Fujimori, A.

2013-01-01

Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

Apparatus to measure emissivities of metallic films between 90K and room temperature

International Nuclear Information System (INIS)

Bekeris, V.I.; Ramos, E.D.; Sanchez, D.H.

1975-01-01

The development of multilayer insulations is aerospace and cryogenic required to know the emissivity of the metallic films used as reflective layers. This work describes an emissometer that measures the total hemispherical emissivity of metallic films evaporated on polyester substrates. The apparatus works at liquid oxigen temperatures and permits to get emissivities from 90K to room temperatures within a 15% precision. The emissometer construction and operation are described in detail. Results of measurements done on Single Aluminized Mylar are presented [pt

Apparatus to measure emissivities of metallic films between 90K and room temperature

Energy Technology Data Exchange (ETDEWEB)

Bekeris, V I [Nunez Univ. Nacional (Argentina). Faculdad de Ciencias Exactas Y Naturales; Ramos, E D [Santa Rosa Univ. Nacional (Argentina). Facultad de Ciencias Exactas Y Naturales; Sanchez, D H [Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche

1975-09-01

The development of multilayer insulations is aerospace and cryogenic required to know the emissivity of the metallic films used as reflective layers. This work describes an emissometer that measures the total hemispherical emissivity of metallic films evaporated on polyester substrates. The apparatus works at liquid oxigen temperatures and permits to get emissivities from 90K to room temperatures within a 15% precision. The emissometer construction and operation are described in detail. Results of measurements done on Single Aluminized Mylar are presented.

Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

International Nuclear Information System (INIS)

Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

2006-01-01

The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

Advantageous use of metallic cobalt in the target for pulsed laser deposition of cobalt-doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Ying, Minju, E-mail: mjying@bnu.edu.cn, E-mail: g.gehring@sheffield.ac.uk [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Blythe, Harry J.; Gerriu, Fatma M.; Fox, A. Mark; Gehring, Gillian A., E-mail: mjying@bnu.edu.cn, E-mail: g.gehring@sheffield.ac.uk [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Dizayee, Wala [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Department of Science, Salahaddin University, Erbil (Iraq); Heald, Steve M. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2016-08-15

We investigate the magnetic properties of ZnCoO thin films grown by pulsed laser deposition (PLD) from targets made containing metallic Co or CoO precursors instead of the usual Co{sub 3}O{sub 4}. We find that the films grown from metallic Co precursors in an oxygen rich environment contain negligible amounts of Co metal and have a large magnetization at room temperature. Structural analysis by X-ray diffraction and magneto-optical measurements indicate that the enhanced magnetism is due, in part, from Zn vacancies that partially compensate the naturally occurring n-type defects. We conclude that strongly magnetic films of Zn{sub 0.95}Co{sub 0.05}O that do not contain metallic cobalt can be grown by PLD from Co-metal-precursor targets if the films are grown in an oxygen atmosphere.

Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

Directory of Open Access Journals (Sweden)

Mihaela Girtan

2017-05-01

Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

International Nuclear Information System (INIS)

Remnev, G.E.; Zakoutaev, A.N.; Grushin, I.I.; Matvenko, V.M.; Potemkin, A.V.; Ryzhkov, V.A.; Chernikov, E.V.

1996-01-01

A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm 2 , pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs

The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

Energy Technology Data Exchange (ETDEWEB)

Remnev, G E; Zakoutaev, A N; Grushin, I I; Matvenko, V M; Potemkin, A V; Ryzhkov, V A [Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.; Ivanov, Yu F [Construction Academy, Tomsk (Russian Federation); Chernikov, E V [Siberian Physical Technical Institute, Tomsk (Russian Federation)

1997-12-31

A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.

Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films

Science.gov (United States)

Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

2000-01-01

A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

Radiation grafting from binary mixtures of vinyl ether of mono ethanol amine with N-vinylpyrrolidone and vinyl ether of ethylene glycol onto polyolefins films and metallization of obtained films

International Nuclear Information System (INIS)

Al'-Saed Abdel' Aal'; Nurkeeva, Z.; Khutoryanskij, V.; Mun, G.; Sangajlo, M.

2003-01-01

Radiation grafting from binary mixtures of vinyl ether of mono ethanol amine with N-vinylpyrrolidone and vinyl ether of ethylene glycol onto polyolefins films using γ-radiation and accelerated electrons has been studied. IR-spectroscopy is used to confirm the structure of grafted films. A combination of and metallization of obtained films. A combination of gravimetric and potentiometric techniques is applied to determine the fraction of each monomer in graft copolymer. Water uptake and contact angle measurements confirmed that the grafting process improve the hydrophilic properties of obtained films. The obtained materials are metallized by electroless copper plating. The metallized films have good electro conductive properties. (author)

Electronic hybridisation implications for the damage-tolerance of thin film metallic glasses.

Science.gov (United States)

Schnabel, Volker; Jaya, B Nagamani; Köhler, Mathias; Music, Denis; Kirchlechner, Christoph; Dehm, Gerhard; Raabe, Dierk; Schneider, Jochen M

2016-11-07

A paramount challenge in materials science is to design damage-tolerant glasses. Poisson's ratio is commonly used as a criterion to gauge the brittle-ductile transition in glasses. However, our data, as well as results in the literature, are in conflict with the concept of Poisson's ratio serving as a universal parameter for fracture energy. Here, we identify the electronic structure fingerprint associated with damage tolerance in thin film metallic glasses. Our correlative theoretical and experimental data reveal that the fraction of bonds stemming from hybridised states compared to the overall bonding can be associated with damage tolerance in thin film metallic glasses.

Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

Science.gov (United States)

Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

2009-07-01

Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

Evaporated metal films as indicators of atmospheric pollution. II. Resistance measurements

Energy Technology Data Exchange (ETDEWEB)

Lodge, Jr, J P; Frank, E R

1962-01-01

There appears to be a direct relationship between gross atmospheric features associated with the accumulation of substances in air that are corrosive to metals and the rate of resistance change of thin metallic films. This behavior is the most striking in aluminum. The suggested apparatus provides an inexpensive and rapid method determining total atmospheric corrosiveness. 1 reference, 10 figures.

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.

Science.gov (United States)

Heo, Jae Sang; Jo, Jeong-Wan; Kang, Jingu; Jeong, Chan-Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck-In; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu

2016-04-27

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) V(-1) s(-1), and a bias stability of ΔVTH IGZO TFTs.

Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

Directory of Open Access Journals (Sweden)

Kwang Hong Lee

2013-09-01

Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

Synthesis and characterization of radiation grafted films for removal of arsenic and some heavy metals from contaminated water

International Nuclear Information System (INIS)

Chowdhury, M.N.K.; Khan, M.W.; Mina, M.F.; Beg, M.D.H.; Khan, Maksudur R.; Alam, A.K.M.M.

2012-01-01

Grafting of styrene/maleic anhydride and methyl methacrylate/maleic anhydride binary monomers onto the low density polyethylene film was performed using the γ-ray irradiation technique. Then, the synthesized grafted films were treated with different ammonia derivatives for developing chelating functionalization. These chelating products were characterized by the gravimetric method as well as by the Fourier transformed infrared spectroscopic method, and were used for removal of arsenic and some heavy metals from aqueous solutions. The optimum absorbed dose of 30 kGy reveals the graft yielding of about 325% in the films. Uptake of arsenic and some heavy-metal ions (Cr(III), Mn(II), Fe(III), Ni(II), Cu(II) and Pb(II)) from contaminated water by the chelating functionalized films (CFF) was examined by an atomic absorption spectrophotometer. The maximum arsenic removal capacity of 5062 mg/kg has been observed for the film treated with hydroxylamine hydrochloride. The CFF prepared by semicarbazide and thiol analogs show affinity toward the metal ions with an order: Cu(II)>Fe(III)>Mn(II) etc. The results obtained from this study indicate that the functionalized films show good chelating and ion-exchange property for metal ions. - Highlights: ► Optimization of radiation dose for grafting reaction of polyethylene with binary monomers. ► Chelating functionalization of grafted film with various amine compounds. ► Characterization of both grafted and chelating functionalized films. ► Proposed mechanism for both grafting and chelating functionalization reaction. ► Application of the synthesized films for the removal of arsenic and some heavy metals from contaminated water.

Multifunctional, Nanostructured Metal Rubber Protective Films for Space Exploration, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — NanoSonic has developed revolutionary nanostructured, yet macroscale, multifunctional Metal RubberTM films. In support of NASA's Vision for Space Exploration, low...

Multifunctional, Nanostructured Metal Rubber Protective Films for Space Exploration, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — NanoSonic has developed revolutionary nanostructured, yet macroscale, multifunctional Metal RubberTM films. In support of NASA's Vision for Space Exploration, low...

Rare earth metals, rare earth hydrides, and rare earth oxides as thin films

International Nuclear Information System (INIS)

Gasgnier, M.

1980-01-01

The review deals with pure rare earth materials such as rare earth metals, rare earth hydrides, and rare earth oxides as thin films. Several preparation techniques, control methods, and nature of possible contaminations of thin films are described. These films can now be produced in an extremely well-known state concerning chemical composition, structure and texture. Structural, electric, magnetic, and optical properties of thin films are studied and discussed in comparison with the bulk state. The greatest contamination of metallic rare earth thin films is caused by reaction with hydrogen or with water vapour. The compound with an f.c.c. structure is the dihydride LnH 2 (Ln = lanthanides). The oxygen contamination takes place after annealing at higher temperatures. Then there appears a compound with a b.c.c. structure which is the C-type sesquioxide C-Ln 2 O 3 . At room atmosphere dihydride light rare earth thin films are converted to hydroxide Ln(OH) 3 . For heavy rare earth thin films the oxinitride LnNsub(x)Osub(y) is observed. The LnO-type compound was never seen. The present review tries to set the stage anew for the investigations to be undertaken in the future especially through the new generations of electron microscopes

Mechanical properties of vapor-deposited thin metallic films: a status report

International Nuclear Information System (INIS)

Adler, P.H.

1982-01-01

The mechanical properties of vapor-deposited thin metallic films are being studied in conjunction with the target fabrication group associated with the laser-fusion energy program. The purpose of the work is to gain an understanding as to which metals are structurally best suited to contain a glass microsphere filled with deuterium-tritium (D-T) gas at large internal pressures

A method for thickness determination of thin films of amalgamable metals by total-reflection X-ray fluorescence

International Nuclear Information System (INIS)

Bennun, L.; Greaves, E.D.; Barros, H.; Diaz-Valdes, J.

2009-01-01

A method for thickness determination of thin amalgamable metallic films by total-reflection X-ray fluorescence (TXRF) is presented. The peak's intensity in TXRF spectra are directly related to the surface density of the sample, i.e. to its thickness in a homogeneous film. Performing a traditional TXRF analysis on a thin film of an amalgamated metal, and determining the relative peak intensity of a specific metal line, the layer thickness can be precisely obtained. In the case of gold thickness determination, mercury and gold peaks overlap, hence we have developed a general data processing scheme to achieve the most precise results.

Energy driven self-organization in nanoscale metallic liquid films.

Science.gov (United States)

Krishna, H; Shirato, N; Favazza, C; Kalyanaraman, R

2009-10-01

Nanometre thick metallic liquid films on inert substrates can spontaneously dewet and self-organize into complex nanomorphologies and nanostructures with well-defined length scales. Nanosecond pulses of an ultraviolet laser can capture the dewetting evolution and ensuing nanomorphologies, as well as introduce dramatic changes to dewetting length scales due to the nanoscopic nature of film heating. Here, we show theoretically that the self-organization principle, based on equating the rate of transfer of thermodynamic free energy to rate of loss in liquid flow, accurately describes the spontaneous dewetting. Experimental measurements of laser dewetting of Ag and Co liquid films on SiO(2) substrates confirm this principle. This energy transfer approach could be useful for analyzing the behavior of nanomaterials and chemical processes in which spontaneous changes are important.

Metal induced crystallization of amorphous silicon thin films studied by x-ray absorption fine structure spectroscopy

International Nuclear Information System (INIS)

Naidu, K Lakshun; Mohiddon, Md Ahamad; Dalba, G; Krishna, M Ghanashyam; Rocca, F

2013-01-01

The role of thin metallic layer (Chromium or Nickel) in the crystallization of a-Si film has been studied using X-ray absorption fine structure spectroscopy (XAFS). The films were grown at different substrate temperatures in two different geometrical structures : (a) a 200 nm metal layer (Cr or Ni) was deposited on fused silica (FS) followed by 400 nm of a-Si and (b) the 400 nm a-Si layer was deposited on FS followed by 200 nm of metal layer. XAFS measurements at Cr K-edge and Ni K-edge were done at BM08 – GILDA beamline of the European Synchrotron Research Facility (ESRF, Grenoble, F) in fluorescence mode. To understand the evolution of the local structure of Cr/Ni diffusing from bottom to top and from top to bottom, total reflection and higher incidence angles were employed. The relative content of metal, metal oxide and metal silicides compounds on the upper surface and/or in the bulk of different films has been evaluated as a function of thermal treatment.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

Directory of Open Access Journals (Sweden)

D. B. DUPARE

2009-02-01

Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

Bare and protected sputtered-noble-metal films for surface-enhanced Raman spectroscopy

Science.gov (United States)

Talaga, David; Bonhommeau, Sébastien

2014-11-01

Sputtered silver and gold films with different surface morphologies have been prepared and coated with a benzenethiol self-assembled monolayer. Rough noble metal films showed strong Raman features assigned to adsorbed benzenethiol molecules upon irradiation over a wide energy range in the visible spectrum, which disclosed the occurrence of a significant surface-enhanced Raman scattering with maximal enhancement factors as high as 6 × 106. In addition, the adsorption of ethanethiol onto silver surfaces hinders their corrosion over days while preserving mostly intact enhancement properties of naked silver. This study may be applied to develop stable and efficient metalized probes for tip-enhanced Raman spectroscopy.

Characterization of the surface film on Zr-based bulk metallic glass using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM)

International Nuclear Information System (INIS)

Tan Ming; Liu Qiao; Zhang Nian; Hu Huiqin; Li Biao; Kang Xianjie

2011-01-01

Highlights: → In this study, we have made four interesting observations. → First, the composition of Al metal ions in the film of the as-cast metallic glass (41%) is much higher than the nominal Al composition of the alloy (9.5%). → We suggest that this should be attributed to the preferential oxidation of Al atoms. → Second, the composition of Al ions in the film of the immersed metallic glass decreases significantly, indicating that the toxic Al oxide and Al ions in the film are dissolved into the solutions during immersion. → Third, the concentration of Cl - ions has no significant effect on the compositions of metal ions in the film. → Fourth, the composition of Zr ions dominates in the film of the immersed metallic glass, indicating that the ZrO 2 oxide in the film is very hard to get corroded in the corrosive solutions. - Abstract: Using XPS, we have for the first time studied the release of metal ions in the film of the Zr-based bulk metallic glass to the corrosive solutions during immersing. The composition of Al ions in the film of the as-cast metallic glass (41%) is substantially higher than the nominal Al composition of the alloy (9.5%). We proposed that the enriched Al ions can be attributed to the preferential oxidation of Al atoms. After immersing in the NaCl- and HCl-solution, the composition of Al ions in the films decreases from 41% to 28.09% and 21.76%, respectively. This indicates that some of the Al ions in the film are dissolved into the solution during immersion. The composition changes of metal ions in the film of the immersed alloys relative to those of the as-cast metallic glass were discussed using the point defect model. SEM was also used to examine the surface morphology of the samples. No pit corrosion was observed in the SEM images of the immersed metal glass.

Study of thin metal films and oxide materials for nanoelectronics applications

OpenAIRE

De Los Santos Valladares, Luis

2012-01-01

Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

''In-situ'' spectro-electrochemical studies of radionuclide-contaminated surface films on metals

International Nuclear Information System (INIS)

Melendres, C.A.; Mini, S.; Mansour, A.N.

2000-01-01

The incorporation of heavy metal ions and radioactive contaminants into hydrous oxide films has been investigated in order to provide fundamental knowledge that could lead to the technological development of cost-effective processes and techniques for the decontamination of storage tanks, piping systems, surfaces, etc., in DOE nuclear facilities. The formation of oxide/hydroxide films was simulated by electrodeposition onto a graphite substrate from solutions of the appropriate metal salt. Synchrotron X-ray Absorption Spectroscopy (XAS), supplemented by Laser Raman Spectroscopy (LRS), was used to determine the structure and composition of the host oxide film, as well as the impurity ion. Results have been obtained for the incorporation of Ce, Sr, Cr, Fe, and U into hydrous nickel oxide films. Ce and Sr oxides/hydroxides are co-precipitated with the nickel oxides in separate phase domains. Cr and Fe, on the other hand, are able to substitute into Ni lattice sites or intercalate in the interlamellar positions of the brucite structure of Ni(OH) 2 . U was found to co-deposit as a U(VI) hydroxide. The mode of incorporation of metal ions depends both on the size and charge of the metal ion. The structure of iron oxide (hydroxide) films prepared by both anodic and cathodic deposition has also been extensively studied. The structure of Fe(OH) 2 was determined to be similar to that of α-Ni(OH) 2 . Anodic deposition from solutions containing Fe 2+ results in a film with a structure similar to γ-FeOOH. From the knowledge gained from the present studies, principles and methods for decontamination have become apparent. Contaminants sorbed on oxide surfaces or co-precipitated may be removed by acid wash and selective dissolution or complexation. Ions incorporated into lattice sites and interlamellar layers will require more drastic cleaning procedures. Electropolishing and the use of an electrochemical brush are among concepts that should be considered seriously for the latter

Epitaxially influenced boundary layer model for size effect in thin metallic films

International Nuclear Information System (INIS)

Bazant, Zdenek P.; Guo Zaoyang; Espinosa, Horacio D.; Zhu Yong; Peng Bei

2005-01-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films

Epitaxially influenced boundary layer model for size effect in thin metallic films

Science.gov (United States)

Bažant, Zdeněk P.; Guo, Zaoyang; Espinosa, Horacio D.; Zhu, Yong; Peng, Bei

2005-04-01

It is shown that the size effect recently observed by Espinosa et al., [J. Mech. Phys. Solids51, 47 (2003)] in pure tension tests on free thin metallic films can be explained by the existence of a boundary layer of fixed thickness, located at the surface of the film that was attached onto the substrate during deposition. The boundary layer is influenced by the epitaxial effects of crystal growth on the dislocation density and texture (manifested by prevalent crystal plane orientations). This influence is assumed to cause significantly elevated yield strength. Furthermore, the observed gradual postpeak softening, along with its size independence, which is observed in short film strips subjected to pure tension, is explained by slip localization, originating at notch-like defects, and by damage, which can propagate in a stable manner when the film strip under pure tension is sufficiently thin and short. For general applications, the present epitaxially influenced boundary layer model may be combined with the classical strain-gradient plasticity proposed by Gao et al., [J. Mech. Phys. Solids 47, 1239 (1999)], and it is shown that this combination is necessary to fit the test data on both pure tension and bending of thin films by one and the same theory. To deal with films having different crystal grain sizes, the Hall-Petch relation for the yield strength dependence on the grain size needs to be incorporated into the combined theory. For very thin films, in which a flattened grain fills the whole film thickness, the Hall-Petch relation needs a cutoff, and the asymptotic increase of yield strength with diminishing film thickness is then described by the extension of Nix's model of misfit dislocations by Zhang and Zhou [J. Adv. Mater. 38, 51 (2002)]. The final result is a proposal of a general theory for strength, size effect, hardening, and softening of thin metallic films.

Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

International Nuclear Information System (INIS)

Barranco, V.; Carpentier, J.; Grundmeier, G.

2004-01-01

The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

Unusual metal-insulator transition in disordered ferromagnetic films

International Nuclear Information System (INIS)

Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

2012-01-01

We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

Work function and quantum efficiency study of metal oxide thin films on Ag(100)

Science.gov (United States)

Chang, V.; Noakes, T. C. Q.; Harrison, N. M.

2018-04-01

Increasing the quantum efficiency (QE) of metal photocathodes is in the design and development of photocathodes for free-electron laser applications. The growth of metal oxide thin films on certain metal surfaces has previously been shown to reduce the work function (WF). Using a photoemission model B. Camino et al. [Comput. Mater. Sci. 122, 331 (2016), 10.1016/j.commatsci.2016.05.025] based on the three-step model combined with density functional theory calculations we predict that the growth of a finite number of MgO(100) or BaO(100) layers on the Ag(100) surface increases significantly the QE compared with the clean Ag(100) surface for a photon energy of 4.7 eV. Different mechanisms for affecting the QE are identified for the different metal oxide thin films. The addition of MgO(100) increases the QE due to the reduction of the WF and the direct excitation of electrons from the Ag surface to the MgO conduction band. For BaO(100) thin films, an additional mechanism is in operation as the oxide film also photoemits at this energy. We also note that a significant increase in the QE for photons with an energy of a few eV above the WF is achieved due to an increase in the inelastic mean-free path of the electrons.

The growth of the metallic ZrNx thin films on P-GaN substrate by pulsed laser deposition

Science.gov (United States)

Gu, Chengyan; Sui, Zhanpeng; Li, Yuxiong; Chu, Haoyu; Ding, Sunan; Zhao, Yanfei; Jiang, Chunping

2018-03-01

Although metal nitride thin films have attractive prospects in plasmonic applications due to its stable properties in harsh environments containing high temperatures, shock, and contaminants, the effect of deposition parameters on the properties of the metallic ZrN grown on III-N semiconductors by pulse laser deposition still lacks of detailed exploration. Here we have successfully prepared metallic ZrNx films on p-GaN substrate by pulsed laser deposition in N2 ambient of various pressures at a fixed substrate temperature (475 °C). It is found that the films exhibit quite smooth surfaces and (111) preferred orientation. The X-ray photoelectron spectroscopy measurements indicate that carbon contamination can be completely removed and oxygen contamination is significantly reduced on the film surfaces after cleaning using Ar+ sputtering. The N/Zr ratio increases from 0.64 to 0.75 when the N2 pressure increases from 0.5 Pa to 3 Pa. The optical reflectivity spectra measured by the UV-vis-NIR spectrophotometer show that the ZrNx is a typical and good metallic-like material and its metallic properties can be tuned with changing the film compositions.

Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

International Nuclear Information System (INIS)

Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

2008-01-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

PZT Films Fabricated by Metal Organic Decomposition Method

Science.gov (United States)

Sobolev, Vladimir; Ishchuk, Valeriy

2014-03-01

High quality lead zirconate titanate films have been fabricated on different substrates by metal organic decomposition method and their ferroelectric properties have been investigated. Main attention was paid to studies of the influence of the buffer layer with conditional composition Pb1.3(Zr0.5Ti0.5) O3 on the properties of Pb(Zr0.5Ti0.5) O3 films fabricated on the polycrystalline titanium and platinum substrates. It is found that in the films on the Pt substrate (with or without the buffer layer) the dependencies of the remanent polarization and the coercivity field on the number of switching cycles do not manifest fatigue up to 109 cycles. The remanent polarization dependencies for films on the Ti substrate with the buffer layer containing an excess of PbO demonstrate an fundamentally new feature that consists of a remanent polarization increase after 108 switching cycles. The increase of remanent polarization is about 50% when the number of cycles approaches 1010, while the increase of the coercivity field is small. A monotonic increase of dielectric losses has been observed in all cases.

Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

Science.gov (United States)

An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

2015-02-01

Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

Science.gov (United States)

Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

2015-09-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

Energy Technology Data Exchange (ETDEWEB)

Baldi, G., E-mail: giacomo.baldi@cnr.it; Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Giusti, G.; Nozar, P.; Toccoli, T.; Verucchi, R. [IMEM-CNR Institute, Via alla Cascata 56/C, Povo – I-38123 Trento (Italy); Collini, C.; Lorenzelli, L. [FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento (Italy)

2015-03-10

We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

Experiments and numerical modeling of fast flowing liquid metal thin films under spatially varying magnetic field conditions

Science.gov (United States)

Narula, Manmeet Singh

Innovative concepts using fast flowing thin films of liquid metals (like lithium) have been proposed for the protection of the divertor surface in magnetic fusion devices. However, concerns exist about the possibility of establishing the required flow of liquid metal thin films because of the presence of strong magnetic fields which can cause flow disrupting MHD effects. A plan is underway to design liquid lithium based divertor protection concepts for NSTX, a small spherical torus experiment at Princeton. Of these, a promising concept is the use of modularized fast flowing liquid lithium film zones, as the divertor (called the NSTX liquid surface module concept or NSTX LSM). The dynamic response of the liquid metal film flow in a spatially varying magnetic field configuration is still unknown and it is suspected that some unpredicted effects might be lurking. The primary goal of the research work being reported in this dissertation is to provide qualitative and quantitative information on the liquid metal film flow dynamics under spatially varying magnetic field conditions, typical of the divertor region of a magnetic fusion device. The liquid metal film flow dynamics have been studied through a synergic experimental and numerical modeling effort. The Magneto Thermofluid Omnibus Research (MTOR) facility at UCLA has been used to design several experiments to study the MHD interaction of liquid gallium films under a scaled NSTX outboard divertor magnetic field environment. A 3D multi-material, free surface MHD modeling capability is under development in collaboration with HyPerComp Inc., an SBIR vendor. This numerical code called HIMAG provides a unique capability to model the equations of incompressible MHD with a free surface. Some parts of this modeling capability have been developed in this research work, in the form of subroutines for HIMAG. Extensive code debugging and benchmarking exercise has also been carried out. Finally, HIMAG has been used to study the

Vacuum deposition of high quality metal films on porous substrates

International Nuclear Information System (INIS)

Barthell, B.L.; Duchane, D.V.

1982-01-01

A composite mandrel has been developed consisting of a core of low density polymethylpentene foam overcoated with a thin layer of film-forming polymer. The surface tension and viscosity of the coating solution are important parameters in obtaining a polymer film which forms a continuous, smooth skin over the core without penetrating into the foam matrix. Water soluble film formers with surface tensions in the range of 45 dyn/cm and minimum viscosities of a few hundred centipoises have been found most satisfactory for coating polymethylpentene foam. By means of this technique, continuous polymer fims with thicknesses of 10--20 μm have been formed on the surface of machined polymethylpentene foam blanks. Aluminum has been vacuum deposited onto these composite mandrels to produce metal films which appear smooth and generally defect free even at 10 000 times magnification

Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

International Nuclear Information System (INIS)

Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

2014-01-01

Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films

Electrochemical and chemical methods of metallizing plastic films

OpenAIRE

Chapples, J.

1991-01-01

This thesis describes two novel techniques for the metallization of non-electroactive polymer films and thicker sectioned polyethylene and nylon substrates. In the first approach, non-electroactive polymer substrates were impregnated with surface layers of polypyrrole and polyaniline, using electrochemical and chemical methods of polymerization. The relative merits of both these approaches are discussed and compared with other methods in the literature. The resultant composi...

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Transparent electrode designs based on optimal nano-patterning of metallic films

KAUST Repository

Catrysse, Peter B.

2010-09-10

Transparent conductive electrodes are critical to the operation of optoelectronic devices, such as photovoltaic cells and light emitting diodes. Effective electrodes need to combine excellent electrical and optical properties. Metal oxides, such as indium tin oxide, are commonly used. There is substantial interest in replacing them, however, motivated by practical problems and recent discoveries regarding the optics of nano-patterned metals. When designing nano-patterned metallic films for use as electrodes, one needs to account for both optical and electrical properties. In general, it is insufficient to optimize nano-structured films based upon optical properties alone, since structural variations will also affect the electrical properties. In this work, we investigate the need for simultaneous optical and electrical performance by analyzing the optical properties of a class of nano-patterned metallic electrodes that is obtained by a constant-sheet-resistance transformation. Within such a class the electrical and optical properties can be separated, i.e., the sheet resistance can be kept constant and the transmittance can be optimized independently. For simple one-dimensional periodic patterns with constant sheet-resistance, we find a transmission maximum (polarization-averaged) when the metal sections are narrow (< 40 nm, ~ 10% metal fill-factor) and tall (> 100 nm). Our design carries over to more complex two-dimensional (2D) patterns. This is significant as there are no previous reports regarding numerical studies on the optical and electrical properties of 2D nano-patterns in the context of electrode design.

Fabrication of metallic nanoparticles by spinodal dewetting of thin films: A high-throughput approach

Energy Technology Data Exchange (ETDEWEB)

Michalak, William D.; Miller, James B. [U.S. Department of Energy, National Energy Technology Laboratory, Pittsburgh, PA 15262 (United States); Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213 (United States); Yolcu, Cem [Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213 (United States); Gellman, Andrew J., E-mail: gellman@cmu.edu [U.S. Department of Energy, National Energy Technology Laboratory, Pittsburgh, PA 15262 (United States); Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213 (United States)

2012-11-01

Metal nanoparticles on structured supports are used in a variety of technological applications including biosensing, energy harvesting, and electronics. In every case, the functions and properties of the metallic nanostructures depend on both their composition and structure (i.e. size, shape, and spatial distribution). Among the challenges to the development of metal nanoparticles for these applications is the characterization of relationships between their structure and their functional properties over multiple structural degrees of freedom spanning a large range of values. In this work, a method for creating a morphological gradient of metal nanoparticles on a substrate is described. The approach, suited for high-throughput fabrication and characterization, is based on spinodal dewetting of a metallic thin film from its substrate. Through control of initial film thickness, anneal temperature, and anneal time, spinodal dewetting results in supported nanoparticles with well-defined and controlled structure. The approach is demonstrated through its application to preparation of Pd nanoparticles on a silicon nitride substrate. The morphologies of the particles were characterized by scanning electron and atomic force microscopies. Free energy-based stability and topological analyses were used to confirm the dewetting mechanism. In addition, the stability theory provides a connection to the thermophysical properties of the resulting nanoparticle array. The dewetting approach is general to any metal/support system and provides an alternative, inexpensive, and robust means to rapidly create metal nanostructures with control of morphology. It shows promise for large scale production of metal nanoparticles structures, as well as understanding basic stability properties of thin metal films. - Highlights: Black-Right-Pointing-Pointer Pd dewetting from SiN occurs by a spinodal dewetting mechanism. Black-Right-Pointing-Pointer Dewetting occurs at temperatures well below the

Fabrication of metallic nanoparticles by spinodal dewetting of thin films: A high-throughput approach

International Nuclear Information System (INIS)

Michalak, William D.; Miller, James B.; Yolcu, Cem; Gellman, Andrew J.

2012-01-01

Metal nanoparticles on structured supports are used in a variety of technological applications including biosensing, energy harvesting, and electronics. In every case, the functions and properties of the metallic nanostructures depend on both their composition and structure (i.e. size, shape, and spatial distribution). Among the challenges to the development of metal nanoparticles for these applications is the characterization of relationships between their structure and their functional properties over multiple structural degrees of freedom spanning a large range of values. In this work, a method for creating a morphological gradient of metal nanoparticles on a substrate is described. The approach, suited for high-throughput fabrication and characterization, is based on spinodal dewetting of a metallic thin film from its substrate. Through control of initial film thickness, anneal temperature, and anneal time, spinodal dewetting results in supported nanoparticles with well-defined and controlled structure. The approach is demonstrated through its application to preparation of Pd nanoparticles on a silicon nitride substrate. The morphologies of the particles were characterized by scanning electron and atomic force microscopies. Free energy-based stability and topological analyses were used to confirm the dewetting mechanism. In addition, the stability theory provides a connection to the thermophysical properties of the resulting nanoparticle array. The dewetting approach is general to any metal/support system and provides an alternative, inexpensive, and robust means to rapidly create metal nanostructures with control of morphology. It shows promise for large scale production of metal nanoparticles structures, as well as understanding basic stability properties of thin metal films. - Highlights: ► Pd dewetting from SiN occurs by a spinodal dewetting mechanism. ► Dewetting occurs at temperatures well below the melting point of Pd. ► Spinodal dewetting allows

Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion

International Nuclear Information System (INIS)

Nordman, Olli; Nordman, Nina; Pashkevich, Valfrid

2001-01-01

The refractive-index change caused by electrons was measured in amorphous AsS and AsSe thin films. Films were coated with different metals. Diffraction gratings were written by electron-beam lithography. The interactions of electrons in films with and without the photodiffusion of overcoated metal were compared. Incoming electrons caused metal atom and ion diffusion in both investigated cases. The metal diffusion was dependent on the metal and it was found to influence the refractive index. In some cases lateral diffusion of the metal was noticed. The conditions for applications were verified. Copyright 2001 Optical Society of America

Spin dependent transport of hot electrons through ultrathin epitaxial metallic films

Energy Technology Data Exchange (ETDEWEB)

Heindl, Emanuel

2010-06-23

In this work relaxation and transport of hot electrons in thin single crystalline metallic films is investigated by Ballistic Electron Emission Microscopy. The electron mean free paths are determined in an energy interval of 1 to 2 eV above the Fermi level. While fcc Au-films appear to be quite transmissive for hot electrons, the scattering lengths are much shorter for the ferromagnetic alloy FeCo revealing, furthermore, a strong spin asymmetry in hot electron transport. Additional information is gained from temperature dependent studies in combination with golden rule approaches in order to disentangle the impact of several relaxation and transport properties. It is found that bcc Fe-films are much less effective in spin filtering than films made of the FeCo-alloy. (orig.)

Composition and morphology of metal-containing diamond-like carbon films obtained by reactive magnetron sputtering

International Nuclear Information System (INIS)

Corbella, C.; Pascual, E.; Oncins, G.; Canal, C.; Andujar, J.L.; Bertran, E.

2005-01-01

The addition of metal atoms within the matrix of diamond-like carbon films leads to the improvement of their mechanical properties. The present paper discusses the relationship between the composition and morphology of metal-containing (W, Nb, Mo, Ti) diamond-like carbon thin films deposited at room temperature by reactive magnetron sputtering from a metal target in an argon and methane atmosphere. Composition was measured either by electron microprobe technique or by X-ray photoelectron spectroscopy and shows a smooth variation with relative methane flow. High relative methane flows lead to a bulk saturation of carbon atoms, which leads to a lack of homogeneity in the films as confirmed by secondary ion mass spectrometry. Cross-section micrographs were observed by transmission electron microscopy and revealed a structure strongly influenced by the metal inserted and its abundance. The surface pattern obtained by scanning electrochemical potential microscopy provided the metallicity distribution. These measurements were completed with atomic force microscopy of the surface. Selected area electron diffraction and X-ray diffraction measurements provided data of the crystalline structure along with nano-crystallite size. High-resolution transmission electron microscopy provided images of these crystallites

Near-unity transparency of a continuous metal film via cooperative effects of double plasmonic arrays

International Nuclear Information System (INIS)

Liu Zhengqi; Liu Guiqiang; Liu Xiaoshan; Huang Kuan; Chen Yuanhao; Fu Guolan; Zhou Haiqing

2013-01-01

Metal structures with high optical transparency and conductivity are of great importance for practical applications in optoelectronic devices. Here we investigate the transparency response of a continuous metal film sandwiched by double plasmonic nanoparticle arrays. The upper nanoparticle array shows efficient light trapping of the incident field, acting as a light input coupler, and the lower nanoparticle array shows a light release gate opening at the other side, acting as the light output coupler. The strong near-field light–matter interactions of the nano-scale separated plasmonic nanoparticles, the excitation of surface plasmon waves of the metal film, and their cooperative coupling effects result in broadband scattering cancellation and near-unity transparency (up to 96%) in the optical regime. The transparency response in such a structure can be efficiently modified by varying the gap distance of adjacent nanoparticles, dielectric environments, and the distance between the plasmonic array and the metal film. This motif may provide a new alternative approach to obtain transparent and highly conducting metal structures with potential applications in transparent conductors, plasmonic filters, and highly integrated light input and output components. (paper)

Coupled Optical Tamm States in a Planar Dielectric Mirror Structure Containing a Thin Metal Film

International Nuclear Information System (INIS)

Zhou Hai-Chun; Yang Guang; Lu Pei-Xiang; Wang Kai; Long Hua

2012-01-01

The coupling between two optical Tamm states (OTSs) with the same eigenenergy is numerically investigated in a planar dielectric mirror structure containing a thin metal film. The reflectivity map in this structure at normal incidence is obtained by applying the transfer matrix method. Two splitting branches appear in the photonic bandgap region when both adjacent dielectric layers of metal film are properly set. The splitting energy of two branches strongly depends on the thickness of the metal film. According to the electric field distribution in this structure, it is found that the high-energy branch corresponds to the antisymmetric coupling between two OTSs, while the low-energy branch is associated with the symmetric coupling between two OTSs. Moreover, the optical difference frequency of two branches is located in a broad terahertz region. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

International Nuclear Information System (INIS)

Li Dejie

2002-01-01

In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

Interaction of Ions with Two-Dimensional Transition Metal Carbide (MXene) Films

Science.gov (United States)

Ren, Chang

Nowadays, society is relying more on nanotechnology for solving critical issues, such as the increasing demand for clean energy and freshwater. Among nanotechnologies, two-dimensional (2D) materials with unique properties are investigated with elevated expectations. In 2011, a new family of 2D materials MXenes were discovered, which became an important addition to the 2D word. The general formula of MXene is Mn+1XnTx, where M stands for transition metal atom, X is C and/or N, n = 1, 2 or 3, and Tx represents surface groups. Nanosheets of MXene obtained by delamination can form flexible films. Additionally, ions can intercalate MXene layers, suggesting potential applications in energy storage and water purification. The Ti3C2Tx MXene films of various thicknesses, which have orderly stacked 2D structure, high density and flexibility, and metallic electrical conductivity of 2400 to 5690 S/cm were fabricated by vacuum-assisted filtration. Ti3C2Tx surface was negatively charged and hydrophilic. Additionally, Ti3C 2Tx films showed sufficient mechanical strength for handling, and the tensile strength of a Ti3C2Tx film was comparable to GO membranes. Metal cations intercalated between the MXene layers, and led to intercalation capacitance. Binder-free Ti3C 2Tx films showed volumetric capacitance of 350 to over 1000 F/cm3 in aqueous electrochemical capacitors (ECs), depending on the electrolyte, and the size of Ti3C2Tx nanosheets. Smaller flakes were obtained by increasing time of ultrasonic treatment. They had a lower electrical conductivity, but a higher capacitance. By introducing polymer nanofillers, such as poly(vinyl alcohol) (PVA) between MXene nanosheets, composite films were prepared and showed controllable electrical conductivity, increased interlayer spacing, improved mechanical strength and capacitive performance. By introducing carbon nanomaterials between MXene layers or creating mesopores on MXene, the films were made more accessible to intercalation and

The fabrication and characterization of an ex situ plated lead film electrode prepared with the use of a reversibly deposited mediator metal

International Nuclear Information System (INIS)

Tyszczuk, Katarzyna

2011-01-01

Research highlights: → The lead film electrode prepared with use of the mediator metal was elaborated. → The lead-based sensors were characterized by optical and voltammetric methods. → The adsorptive system of folic acid was employed to investigate a new electrode. → The application of the mediator metal improved properties of a lead film electrode. - Abstract: In this paper an ex situ plated lead film electrode prepared with use of the mediator metal (Zn) was elaborated. The electrochemical method for lead film formation is based on a co-deposition of a metal of interest (Pb) with a reversibly deposited mediator metal (Zn) and then on an oxidation of zinc and further deposition of lead by the appropriate potential. This serves to increase the density of islands of lead atoms, promoting lead film growth. The lead-based sensors were characterized by optical method (atomic force microscopy (AFM)) and as well as cyclic, linear sweep and square wave voltammetry. The adsorptive system of folic acid was employed to investigate the electrochemical characteristics a novel type of lead film electrode. Well-formed stripping peaks and a linear dependence of the stripping current on the folic acid concentration were observed on the lead film electrode prepared with use of the mediator metal while comparative measurements attempted with the lead film electrode prepared without use of the mediator metal were unsuccessful.

The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

Energy Technology Data Exchange (ETDEWEB)

Reichel, Friederike

2007-11-19

This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

International Nuclear Information System (INIS)

Galloway, H.C.

1995-12-01

Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

Adherence of diamond films on refractory metal substrates for thermionic applications

International Nuclear Information System (INIS)

Tsao, B.H.; Ramalingam, M.L.; Adams, S.F.; Cloyd, J.S.

1991-01-01

Diamond films are currently being considered as electrical insulation material for application in the thermionic fuel element of a power producing nuclear reactor system. The function of the diamond insulator in this application is to electrically isolate the collector of each cell in the TFE from the coolant and outer sheath. Deposition of diamond films on plane surfaces of Si/SiO 2 have already been demonstrated to be quite effective. However, the diamond films on refractory metal surfaces tend to spall off in the process of deposition revealing an inefficient adherence characteristic between the film and the substrate. This paper is geared towards explaining this deficiency by way of selected experimentation and the use of analytical tools to predict uncertainties such as the mismatch in coefficient of expansion, micrographic study of the interface between the film and the substrate and X-ray diffraction spectra. The investigation of the adherence characteristics of several diamond films on Mo and Nb substrates revealed that there was an allowable stress that resulted in the formation of the critical thickness for the diamond film

Revealing the relationships between chemistry, topology and stiffness of ultrastrong Co-based metallic glass thin films: A combinatorial approach

International Nuclear Information System (INIS)

Schnabel, Volker; Köhler, Mathias; Evertz, Simon; Gamcova, Jana; Bednarcik, Jozef; Music, Denis; Raabe, Dierk; Schneider, Jochen M.

2016-01-01

An efficient way to study the relationship between chemical composition and mechanical properties of thin films is to utilize the combinatorial approach, where spatially resolved mechanical property measurements are conducted along a concentration gradient. However, for thin film glasses many properties including the mechanical response are affected by chemical topology. Here a novel method is introduced which enables spatially resolved short range order analysis along concentration gradients of combinatorially synthesized metallic glass thin films. For this purpose a CoZrTaB metallic glass film of 3 μm thickness is deposited on a polyimide foil, which is investigated by high energy X-ray diffraction in transmission mode. Through the correlative chemistry-topology-stiffness investigation, we observe that an increase in metalloid concentration from 26.4 to 32.7 at% and the associated formation of localized (hybridized) metal – metalloid bonds induce a 10% increase in stiffness. Concomitantly, along the same composition gradient, a metalloid-concentration-induced increase in first order metal - metal bond distances of 1% is observed, which infers itinerant (metallic) bond weakening. Hence, the metalloid concentration induced increase in hybridized bonding dominates the corresponding weakening of metallic bonds.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

Energy Technology Data Exchange (ETDEWEB)

Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier [Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Wöll, Christof, E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu [Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Röse, Silvana [Preparative Macromolecular Chemistry, Institute for Chemical Technology and Polymer Chemistry (ICTP), Karlsruhe Institute of Technology (KIT), Engesserstrasse 18, 76128 Karlsruhe (Germany); Institute for Biological Interfaces (IBG), Karlsruhe Institute of Technology (KIT), Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Oberst, Vanessa [Institute of Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Walheim, Stefan [Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2015-09-07

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

International Nuclear Information System (INIS)

Best, James P.; Michler, Johann; Maeder, Xavier; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Liu, Jinxuan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof; Röse, Silvana; Oberst, Vanessa; Walheim, Stefan

2015-01-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E ITO  ≈ 96.7 GPa, E HKUST−1  ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices

Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

Energy Technology Data Exchange (ETDEWEB)

Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

2008-09-01

The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

Implantable polymer/metal thin film structures for the localized treatment of cancer by Joule heating

Science.gov (United States)

Kan-Dapaah, Kwabena; Rahbar, Nima; Theriault, Christian; Soboyejo, Wole

2015-04-01

This paper presents an implantable polymer/metal alloy thin film structure for localized post-operative treatment of breast cancer. A combination of experiments and models is used to study the temperature changes due to Joule heating by patterned metallic thin films embedded in poly-dimethylsiloxane. The heat conduction within the device and the surrounding normal/cancerous breast tissue is modeled with three-dimensional finite element method (FEM). The FEM simulations are used to explore the potential effects of device geometry and Joule heating on the temperature distribution and lesion (thermal dose). The FEM model is validated using a gel model that mimics biological media. The predictions are also compared to prior results from in vitro studies and relevant in vivo studies in the literature. The implications of the results are discussed for the potential application of polymer/metal thin film structures in hyperthermic treatment of cancer.

Flame-Sprayed Y2O3 Films with Metal-EDTA Complex Using Various Cooling Agents

Science.gov (United States)

Komatsu, Keiji; Toyama, Ayumu; Sekiya, Tetsuo; Shirai, Tomoyuki; Nakamura, Atsushi; Toda, Ikumi; Ohshio, Shigeo; Muramatsu, Hiroyuki; Saitoh, Hidetoshi

2017-01-01

In this study, yttrium oxide (Y2O3) films were synthesized from a metal-ethylenediaminetetraacetic (metal-EDTA) complex by employing a H2-O2 combustion flame. A rotation apparatus and various cooling agents (compressed air, liquid nitrogen, and atomized purified water) were used during the synthesis to control the thermal history during film deposition. An EDTA·Y·H complex was prepared and used as the staring material for the synthesis of Y2O3 films with a flame-spraying apparatus. Although thermally extreme environments were employed during the synthesis, all of the obtained Y2O3 films showed only a few cracks and minor peeling in their microstructures. For instance, the Y2O3 film synthesized using the rotation apparatus with water atomization units exhibited a porosity of 22.8%. The maximum film's temperature after deposition was 453 °C owing to the high heat of evaporation of water. Cooling effects of substrate by various cooling units for solidification was dominated to heat of vaporization, not to unit's temperatures.

Developments in hot-filament metal oxide deposition (HFMOD)

International Nuclear Information System (INIS)

Durrant, Steven F.; Trasferetti, Benedito C.; Scarminio, Jair; Davanzo, Celso U.; Rouxinol, Francisco P.M.; Gelamo, Rogerio V.; Bica de Moraes, Mario A.

2008-01-01

Hot-filament metal oxide deposition (HFMOD) is a variant of conventional hot-filament chemical vapor deposition (HFCVD) recently developed in our laboratory and successfully used to obtain high-quality, uniform films of MO x , WO x and VO x . The method employs the controlled oxidation of a filament of a transition metal heated to 1000 deg. C or more in a rarefied oxygen atmosphere (typically, of about 1 Pa). Metal oxide vapor formed on the surface of the filament is transported a few centimetres to deposit on a suitable substrate. Key system parameters include the choice of filament material and diameter, the applied current and the partial pressures of oxygen in the chamber. Relatively high film deposition rates, such as 31 nm min -1 for MoO x , are obtained. The film stoichiometry depends on the exact deposition conditions. MoO x films, for example, present a mixture of MoO 2 and MoO 3 phases, as revealed by XPS. As determined by Li + intercalation using an electrochemical cell, these films also show a colouration efficiency of 19.5 cm 2 C -1 at a wavelength of 700 nm. MO x and WO x films are promising in applications involving electrochromism and characteristics of their colouring/bleaching cycles are presented. The chemical composition and structure of VO x films examined using IRRAS (infrared reflection-absorption spectroscopy), RBS (Rutherford backscattering spectrometry) and XPS (X-ray photoelectron spectrometry) are also presented

Fabrication and Evaluation of One-Axis Oriented Lead Zirconate Titanate Films Using Metal-Oxide Nanosheet Interface Layer

Science.gov (United States)

Minemura, Yoshiki; Nagasaka, Kohei; Kiguchi, Takanori; Konno, Toyohiko J.; Funakubo, Hiroshi; Uchida, Hiroshi

2013-09-01

Nanosheet Ca2Nb3O20 (ns-CN) layers with pseudo-perovskite-type crystal configuration were applied on the surface of polycrystalline metal substrates to achieve preferential crystal orientation of Pb(Zr,Ti)O3 (PZT) films for the purpose of enhanced ferroelectricity comparable to that of epitaxial thin films. PZT films with tetragonal symmetry (Zr/Ti=0.40:0.60) were fabricated by chemical solution deposition (CSD) on ns-CN-buffered Inconel 625 and SUS 316L substrates, while ns-CN was applied on the the substrates by dip-coating. The preferential crystal growth on the ns-CN layer can be achieved by favorable lattice matching between (001)/(100)PZT and (001)ns-CN planes. The degree of (001) orientation was increased for PZT films on ns-CN/Inconel 625 and ns-CN/SUS 316L substrates, whereas randomly-oriented PZT films with a lower degree of (001) orientation were grown on bare and Inconel 625 films. Enhanced remanent polarization of 60 µC/cm2 was confirmed for the PZT films on ns-CN/metal substrates, ascribed to the preferential alignment of the polar [001] axis normal to the substrate surface, although it also suffered from higher coercive field above 500 kV/cm caused by PZT/metal interfacial reaction.

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

Science.gov (United States)

Galmed, A. H.; Kassem, A. K.; von Bergmann, H.; Harith, M. A.

2011-01-01

Metals and metal alloys are usually employed as interconnections to guide electrical signals between components into the very large scale integrated (VLSI) devices. These devices demand higher complexity, better performance and lower cost. Thin film is a common geometry for these metallic applications, requiring a substrate for rigidity. Accurate depth profile analysis of coatings is becoming increasingly important with expanding industrial use in technological fields. A number of articles devoted to LIBS applications for depth-resolved analysis have been published in recent years. In the present work, we are studying the ability of femtosecond LIBS to make depth profiling for a Ti thin film of thickness 213 nm deposited onto a silicon (100) substrate before and after thermal annealing. The measurements revealed that an average ablation rates of 15 nm per pulse have been achieved. The thin film was examined using X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM), while the formation of the interface was examined using Rutherford Back Scattering (RBS) before and after annealing. To verify the depth profiling results, a theoretical simulation model is presented that gave a very good agreement with the experimental results.

Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

International Nuclear Information System (INIS)

Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

2013-01-01

Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films

International Nuclear Information System (INIS)

Kim, K.J.; Kim, K.S.; Lee, N.-E.; Choi, J.; Jung, D.

2001-01-01

Chemical interaction and adhesion characteristics between metals (Cu, Ta) and low-k plasma-treated cyclohexane-based plasma polymer (CHexPP) films were studied. In order to generate new functional groups that may contribute to the improvement of adhesion between metal and plasma polymer, we performed O 2 , N 2 , and H 2 /He mixture plasma treatment on the surfaces of CHexPP films. Chemical interactions at the interface between metals (Cu, Ta) and plasma-treated CHexPP films were analyzed by x-ray photoelectron spectroscopy. The effect of plasma treatment and thermal annealing on the adhesion characteristics was measured by a tape test and scratch test. The formation of new binding states on the surface of plasma-treated CHexPP films improved adhesion characteristics between metals and CHexPP films. Thermal annealing improves the adhesion property of Cu/CHexPP films, but degrades the adhesion property of Ta/CHexPP films

Non-conductive ferromagnetic carbon-coated (Co, Ni) metal/polystyrene nanocomposites films

Energy Technology Data Exchange (ETDEWEB)

Takacs, H., E-mail: helene.takacs@gmail.com [CEA, LETI, MINATEC Campus, Grenoble 38054 (France); LTM-CNRS-UJF, CEA, LETI, Minatec Campus, Grenoble 38054 (France); Viala, B.; Hermán, V. [CEA, LETI, MINATEC Campus, Grenoble 38054 (France); Tortai, J.-H. [LTM-CNRS-UJF, CEA, LETI, Minatec Campus, Grenoble 38054 (France); Duclairoir, F. [Université Grenoble Alpes, INAC, Grenoble 38054 (France); CEA, INAC, Grenoble 38054 (France)

2016-03-07

This article reports non-conductive ferromagnetic properties of metal/polymer nanocomposite films intended to be used for RF applications. The nanocomposite arrangement is unique showing a core double-shell structure of metal-carbon-polystyrene: M/C//P{sub 1}/P{sub 2}, where M = Co, Ni is the core material, C = graphene or carbon is the first shell acting as a protective layer against oxidation, P{sub 1} = pyrene-terminated polystyrene is the second shell for electrical insulation, and P{sub 2} = polystyrene is a supporting matrix (// indicates actual grafting). The nanocomposite formulation is briefly described, and the film deposition by spin-coating is detailed. Original spin-curves are reported and analyzed. One key outcome is the achievement of uniform and cohesive films at the wafer scale. Structural properties of films are thoroughly detailed, and weight and volume fractions of M/C are considered. Then, a comprehensive overview of DC magnetic and electrical properties is reported. A discussion follows on the magnetic softness of the nanocomposites vs. that of a single particle (theoretical) and the raw powder (experimental). Finally, unprecedented achievement of high magnetization (∼0.6 T) and ultra-high resistivity (∼10{sup 10 }μΩ cm) is shown. High magnetization comes from the preservation of the existing protective shell C, with no significant degradation on the particle net-moment, and high electrical insulation is ensured by adequate grafting of the secondary shell P{sub 1}. To conclude, the metal/polymer nanocomposites are situated in the landscape of soft ferromagnetic materials for RF applications (i.e., inductors and antennas), by means of two phase-diagrams, where they play a crucial role.

Mechanistic Insights into Growth of Surface-Mounted Metal-Organic Framework Films Resolved by Infrared (Nano-) Spectroscopy

NARCIS (Netherlands)

Delen, Guusje; Ristanovic, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

2018-01-01

Control over assembly, orientation, and defect-free growth of metal-organic framework (MOF) films is crucial for their future applications. A layer-by-layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film

Spontaneous magnetization of thin films of ordered and disordered alloys of transition metals

International Nuclear Information System (INIS)

Nguyen Nhat Khanh.

1989-12-01

A method of calculation of spontaneous magnetization of thin films of transition metal alloys is described. The method is based on the Hubbard model for d electrons. Use of the Bragg-Williams approximation and two-dimensional canonical transformations has allowed to calculate the magnetization. Results for a Ni 3 Fe thin film are presented. (author). 11 refs, 1 fig

Metal-Oxide Film Conversions Involving Large Anions

Energy Technology Data Exchange (ETDEWEB)

Pretty, S.; Zhang, X.; Shoesmith, D.W.; Wren, J.C. [The University of Western Ontario, Chemistry Department, 1151 Richmond St., N6A 5B7, London, Ontario (Canada)

2008-07-01

The main objective of my research is to establish the mechanism and kinetics of metal-oxide film conversions involving large anions (I{sup -}, Br{sup -}, S{sup 2-}). Within a given group, the anions will provide insight on the effect of anion size on the film conversion, while comparison of Group 6 and Group 7 anions will provide insight on the effect of anion charge. This research has a range of industrial applications, for example, hazardous radioiodine can be immobilized by reaction with Ag to yield AgI. From the perspective of public safety, radioiodine is one of the most important fission products from the uranium fuel because of its large fuel inventory, high volatility, and radiological hazard. Additionally, because of its mobility, the gaseous iodine concentration is a critical parameter for safety assessment and post-accident management. A full kinetic analysis using electrochemical techniques has been performed on the conversion of Ag{sub 2}O to (1) AgI and (2) AgBr. (authors)

Metal-Oxide Film Conversions Involving Large Anions

International Nuclear Information System (INIS)

Pretty, S.; Zhang, X.; Shoesmith, D.W.; Wren, J.C.

2008-01-01

The main objective of my research is to establish the mechanism and kinetics of metal-oxide film conversions involving large anions (I - , Br - , S 2- ). Within a given group, the anions will provide insight on the effect of anion size on the film conversion, while comparison of Group 6 and Group 7 anions will provide insight on the effect of anion charge. This research has a range of industrial applications, for example, hazardous radioiodine can be immobilized by reaction with Ag to yield AgI. From the perspective of public safety, radioiodine is one of the most important fission products from the uranium fuel because of its large fuel inventory, high volatility, and radiological hazard. Additionally, because of its mobility, the gaseous iodine concentration is a critical parameter for safety assessment and post-accident management. A full kinetic analysis using electrochemical techniques has been performed on the conversion of Ag 2 O to (1) AgI and (2) AgBr. (authors)

Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

International Nuclear Information System (INIS)

Seveno, R.; Braud, A.; Gundel, H.W.

2005-01-01

In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O 3 , PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO 3 ) by chemical solution deposition is studied. The SrRuO 3 thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO 3 layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 μC/cm were found

Ortho-para-conversion of hydrogen in films of rare earth metals

International Nuclear Information System (INIS)

Zhavoronkova, K.N.; Peshkov, A.V.

1979-01-01

Investigated is specific catalytic activity of REE to clarify to what an extent the change of electron structure of the metals might influence their catalytic properties. Conducted is investigation of Sc, It, La and other lanthanides, except Eu amd Pm prepared in the form of metallic films, impowdered in vacuum of 10 -7 torr. It is established, that pape earth elements as catalysts of low-temperature ortho-para-conversion od hydrogen are divided into 2 groups, differing by mechanism of the reaction. Comparison of experimental results with the calculation results of absolute rates of paramagnetic conversion and also with investigation results of isotopjc exchange on these metals showed, that on the metals of group 1 conversjon proceeds according to chemical mechanism, and on the metals of group 2 - according to oscillating magnetic mechanism

Metal-doped diamond-like carbon films synthesized by filter-arc deposition

International Nuclear Information System (INIS)

Weng, K.-W.; Chen, Y.-C.; Lin, T.-N.; Wang, D.-Y.

2006-01-01

Diamond-like carbon (DLC) thin films are extensively utilized in the semiconductor, electric and cutting machine industries owing to their high hardness, high elastic modulus, low friction coefficients and high chemical stability. DLC films are prepared by ion beam-assisted deposition (BAD), sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), cathodic arc evaporation (CAE), and filter arc deposition (FAD). The major drawbacks of these methods are the degraded hardness associated with the low sp 3 /sp 2 bonding ratio, the rough surface and poor adhesion caused by the presence of particles. In this study, a self-developed filter arc deposition (FAD) system was employed to prepare metal-containing DLC films with a low particle density. The relationships between the DLC film properties, such as film structure, surface morphology and mechanical behavior, with variation of substrate bias and target current, are examined. Experimental results demonstrate that FAD-DLC films have a lower ratio, suggesting that FAD-DLC films have a greater sp 3 bonding than the CAE-DLC films. FAD-DLC films also exhibit a low friction coefficient of 0.14 and half of the number of surface particles as in the CAE-DLC films. Introducing a CrN interfacial layer between the substrate and the DLC films enables the magnetic field strength of the filter to be controlled to improve the adhesion and effectively eliminate the contaminating particles. Accordingly, the FAD system improves the tribological properties of the DLC films

The influence of metal interlayers on the structural and optical properties of nano-crystalline TiO 2 films

KAUST Repository

Yang, Yong

2012-03-01

TiO 2-M-TiO 2 (M = W, Co and Ag) multilayer films have been deposited on glass substrates using reactive magnetron sputtering, then annealed in air for 2 h at 500°C. The structure, surface morphology and optical properties of the films have been studied using X-ray diffraction, Raman spectroscopy, atomic force microscopy and UV-vis spectroscopy. The TiO 2-W-TiO 2 and TiO 2-Co-TiO 2 films showed crystalline phases, whereas the TiO 2-Ag-TiO 2 films remained in the amorphous state. The crystallization temperature for the TiO 2-M-TiO 2 films decreased significantly compared with pure TiO 2 film deposited on quartz. Detailed analysis of the Raman spectra suggested that the crystallization of TiO 2-M-TiO 2 films was associated with the large structural deformation imposed by the oxidation of intermediate metal layers. Moreover, the optical band gap of the films narrowed due to the appearance of impurity levels as the metal ions migrated into the TiO 2 matrix. These results indicate that the insertion of intermediate metal layers provides a feasible access to improve the structural and optical properties of anatase TiO 2 films, leading to promising applications in the field of photocatalysis. © 2011 Elsevier B.V. All rights reserved.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

Separation of sup(115m)In from mother 115Cd

International Nuclear Information System (INIS)

Kersulis, V.J.

1979-01-01

The methods of the accelerated isolation of the metallic sup(115m)In from the mother solution of 115 Cd were worked out. The sample was dissolved in the concentrated HCl with the presence of H 2 O 2 . After the injection of 5 mg (recalculated for the metallic In) of the carrier, the solution was evaporated dry, the remainder was dissolved in 2n HCl. The obtained solution was lead through an ion-exchange column (9 mm in diameter and with the 250 mm height of the layer with the anionite Dowex 2x8 (50-100 mesh). The sup(115m)In was eluated by 0.15n HCl, and 115 Cd - by 1.5n HCl. Radiochemical purity of the sup(115m)In was not less than 99.99%. The isolation of the sup(115m)In from the eluent (alkalined up to ph=2.3) was carried out electrochemically during approximately 1 hour on the platinum cathode at high (400 mA/cm 2 ) cathode density of current

Bi--Sr--Ca--Cu--O superconducting films fabricated using metal alkoxides

International Nuclear Information System (INIS)

Katayama, S.; Sekine, M.

1991-01-01

Superconducting films in the Bi--Sr--Ca--Cu--O systems were made using metal alkoxides. To prepare a dip-coating solution using a mixed alkoxide solution, insoluble Cu and Bi alkoxides were dissolved by modification with 2-dimethylaminoethanol and formation of a double alkoxide, respectively. Formation of the double alkoxides of Bi with Ca or Sr was confirmed using FT-IR and 1 H-NMR. Bi--Sr--Ca--Cu--O films on yttria-stabilized ZrO 2 and single crystal MgO(100) substrates were made using this solution. The films were closely oriented along the c-axis perpendicular to the substrate. The film on MgO(100) fired at 850 degree C for 48 h showed two resistance drops around 115 and 85 K, corresponding to the high-T c and low-T c phases, respectively, and zero resistance at 72 K

Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

2008-07-01

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

2008-01-01

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

Characterization of a glass frit free TiCuAg-thick film metallization applied on aluminium nitride

International Nuclear Information System (INIS)

Reicher, R.; Smetana, W.; Adlassnig, A.; Schuster, J. C.; Gruber, U.

1997-01-01

The metallization of aluminium nitride substrates by glass frit free Ti CuAg-thick film pastes were investigated. Adhesion properties of the conductor paste were tested by measuring tensile strength and compared with commercial Cu-thick film pastes (within glass frit). Also numerical analysis of temperature-distribution and thermal extension of metallized aluminium nitride ceramic, induced by a continuous and a pulsed working electronic device were made with a finite element program. (author)

Simultaneous Patterning of Independent Metal/Metal Oxide Multi-Layer Films Using Two-Tone Photo-Acid Generating Compound Systems

Directory of Open Access Journals (Sweden)

Hideo Honma

2012-10-01

Full Text Available (1 The photo-induced solubility and positive-tone direct photo-patterning of iron, copper and lanthanides chelated with 4-(2-nitrobenzyloxycarbonylcatechol (NBOC or 4-(6-nitroveratryloxycarbonylcatechol (NVOC was investigated. Photo-patterning of iron, copper, cerium, samarium, europium, terbium, dysprosium, holmium, erbium and lutetium complexes was accomplished. Continuous films were formed by the pyrolysis of metal complex films at 500 °C. (2 Based on the difference in the photo-reaction excitation wavelength profile of NBOC and NVOC complexes, a short and simple method for simultaneous micro-patterning of two independent films on each side of a transparent glass substrate was developed. Using the developed procedure, indium tin oxide and/or titanium oxide films were formed on each side of a quartz substrate without use of resist or etching.

Pulsed injection metal organic chemical vapour deposition and characterisation of thin CaO films

International Nuclear Information System (INIS)

Borges, R.P.; Ferreira, P.; Saraiva, A.; Goncalves, R.; Rosa, M.A.; Goncalves, A.P.; Silva, R.C. da; Magalhaes, S.; Lourenco, M.J.V.; Santos, F.J.V.; Godinho, M.

2009-01-01

Thin films of CaO were grown on silicon (Si) and lanthanum aluminate (LaAlO 3 ) substrates by pulsed injection metal-organic chemical vapour deposition in a vertical injection MOCVD system. Growth parameters were systematically varied to study their effect on film growth and quality and to determine the optimal growth conditions for this material. Film quality and growth rate were evaluated by atomic force microscopy, X-ray diffraction and Rutherford Backscattering Spectroscopy measurements. Optimised conditions allowed growing transparent, single phase films textured along the (0 0 l) direction.

Phase-selective staining of metal salt for scanning electron microscopy imaging of block copolymer film

Energy Technology Data Exchange (ETDEWEB)

Li, Jing Ze, E-mail: Lijinge@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054 (China); State Key Laboratory of Polymer Materials Engineering (Sichuan University), Chengdu 610054 (China); Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumuqi 830011 (China); Wang, Ying; Hong Wang, Zhi; Mei, Di; Zou, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054 (China); Min Chang, Ai [State Key Laboratory of Polymer Materials Engineering (Sichuan University), Chengdu 610054 (China); Wang, Qi [Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumuqi 830011 (China); Komura, Motonori; Ito, Kaori [Division of Integrated Molecular Engineering, Chemical Resources Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Iyoda, Tomokazu, E-mail: Iyoda.t.aa@m.titech.ac.jp [Division of Integrated Molecular Engineering, Chemical Resources Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)

2010-09-15

Three metal salts, i.e., AgNO{sub 3}, HAuCl{sub 4}, and KCl, were proposed as novel staining reagents instead of traditional RuO{sub 4} and OsO{sub 4} labeled with expensive price and extreme toxicity for scanning electron microscopy (SEM) imaging of microphase separated block copolymer film. A simple and costless aqueous solution immersion procedure could ensure selective staining of the metal slat in specific phase of the nanostructured copolymer film, leading to a clear phase contrasted SEM image. The heavy metal salt has better staining effect, demonstrating stable and high signal-to-noise SEM image even at an acceleration voltage as high as 30 kV and magnification up to 250,000 times.

Control of in-plane texture of body centered cubic metal thin films

International Nuclear Information System (INIS)

Harper, J.M.; Rodbell, K.P.; Colgan, E.G.; Hammond, R.H.

1997-01-01

We show that dramatically different in-plane textures can be produced in body centered cubic (bcc) metal thin films deposited on amorphous substrates under different deposition conditions. The crystallographic orientation distribution of polycrystalline bcc metal thin films on amorphous substrates often has a strong left-angle 110 right-angle fiber texture, indicating that {110} planes are parallel to the substrate plane. When deposition takes place under bombardment by energetic ions or atoms at an off-normal angle of incidence, the left-angle 110 right-angle fiber texture develops an in-plane texture, indicating nonrandom azimuthal orientations of the crystallites. Three orientations in Nb films have been observed under different deposition geometries, in which the energetic particle flux coincides with channeling directions in the bcc crystal structure. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems with various configurations. These are described, and an example is given in which the in-plane orientation of Mo films deposited in two different in-line magnetron sputtering systems differs by a 90 degree rotation. In these two cases, there is a strong left-angle 110 right-angle fiber texture, but the in-plane left-angle 100 right-angle direction is oriented parallel to the scan direction in one system, and perpendicular to the scan direction in the other system. The conditions which produce such different in-plane textures in two apparently similar sputtering systems are discussed. copyright 1997 American Institute of Physics

Metal-enhanced fluorescence of mixed coumarin dyes by silver and gold nanoparticles: Towards plasmonic thin-film luminescent solar concentrator

Energy Technology Data Exchange (ETDEWEB)

El-Bashir, S.M., E-mail: elbashireg@yahoo.com [Department of Physics and Astronomy, Science College, King Saud University, Riyadh, KSA (Saudi Arabia); Department of Physics Faculty of Science, Benha University (Egypt); Barakat, F.M.; AlSalhi, M.S. [Department of Physics and Astronomy, Science College, King Saud University, Riyadh, KSA (Saudi Arabia)

2013-11-15

Poly(methyl methacrylate) (PMMA) nanocomposite films doped with mixed coumarin dyestuffs and noble metal nanoparticles (60 nm silver and 100 nm gold) were prepared by spin coating technique. The effect of silver and gold nanoparticles on the film properties was studied by Fourier transform infrared spectroscopy (FT-IR), differential scanning calorimetry (DSC), transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV–vis absorption and fluorescence spectroscopy measurements. DSC measurements indicated the increase of the glass transition temperature of the films by increasing nanogold concentration, recommending their promising thermal stability towards hot climates. It was found that the fluorescence signals of the mixed coumarin dyes were amplified by 5.4 and 7.15 folds as a result of metal enhanced fluorescence (MEF). The research outcomes offered a potential application of these films in solar energy conversion by plasmonic thin film luminescent solar concentrator (PTLSC). -- Graphical abstract: Plasmonic thin film luminescent solar concentrators. Highlights: • Metal enhanced fluorescence was achieved for mixed coumarin dyes doped in PMMA nanocomposite films. • The amplification of the fluorescence signals is dependent on the concentration of silver and gold nanoparticles. • These films is considered as potential candidates for plasmonic thin film luminescent solar concentrators (PTLSCs)

Structured nanoporous surfaces from hybrid block copolymer micelle films with metal ions

International Nuclear Information System (INIS)

Kim, Minsoo P; Yi, Gi-Ra; Kim, Hyeong Jun; Kim, Bumjoon J

2015-01-01

We present a novel method for producing structured nanoporous thin films using block copolymer (BCP) micelles loaded with metallic ions. The BCP micellar thin films containing gold (Au) ions were prepared by spin-coating poly(styrene-block-4-vinylpyridine) (PS-b-P4VP) micelle solutions in which Au precursors (AuCl 4 − ) were selectively loaded onto the P4VP core. When the micellar films were exposed to cetyltrimethylammonium bromide (CTAB) solutions, the Au precursors were selectively extracted from the P4VP domains due to their strong electrostatic interaction with CTAB, leading to the formation of pores in the micelles. Consequently, regularly patterned nanoporous surfaces were formed. By controlling the molecular weight (M n ) of PS-b-P4VP and the amount of Au precursors (λ) that were loaded in the P4VP domains, the pore size and depth could be tuned precisely. In particular, when a sufficient amount of Au precursors was loaded (λ  ≥ 0.3), the porous surface nanostructure was well developed. In addition, the pore size and depth of the nanostructure increased as the λ value increased. For instance, when the λ value increased from 0.3 to 1.0, the pore size increased from 22.8 nm to 28.8 nm, and the pore depth increased from 2.1 nm to 3.2 nm. Interestingly, the transition from the nonporous structures to the porous structures in the micellar film could be reversibly controlled by adding and removing the Au precursors in the film. Moreover, our method for the preparation of nanoporous films can be extended to micellar film by incorporating other metal ions such as silver (Ag) and iron (Fe). (paper)

Investigating the Mechanical Behavior and Deformation Mechanisms of Ultrafinegrained Metal Films Using Ex-situ and In-situ TEM Techniques

Science.gov (United States)

Izadi, Ehsan

Nanocrystalline (NC) and Ultrafine-grained (UFG) metal films exhibit a wide range of enhanced mechanical properties compared to their coarse-grained counterparts. These properties, such as very high strength, primarily arise from the change in the underlying deformation mechanisms. Experimental and simulation studies have shown that because of the small grain size, conventional dislocation plasticity is curtailed in these materials and grain boundary mediated mechanisms become more important. Although the deformation behavior and the underlying mechanisms in these materials have been investigated in depth, relatively little attention has been focused on the inhomogeneous nature of their microstructure (particularly originating from the texture of the film) and its influence on their macroscopic response. Furthermore, the rate dependency of mechanical response in NC/UFG metal films with different textures has not been systematically investigated. The objectives of this dissertation are two-fold. The first objective is to carry out a systematic investigation of the mechanical behavior of NC/UFG thin films with different textures under different loading rates. This includes a novel approach to study the effect of texture-induced plastic anisotropy on mechanical behavior of the films. Efforts are made to correlate the behavior of UFG metal films and the underlying deformation mechanisms. The second objective is to understand the deformation mechanisms of UFG aluminum films using in-situ transmission electron microscopy (TEM) experiments with Automated Crystal Orientation Mapping. This technique enables us to investigate grain rotations in UFG Al films and to monitor the microstructural changes in these films during deformation, thereby revealing detailed information about the deformation mechanisms prevalent in UFG metal films.

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

Directory of Open Access Journals (Sweden)

Sun-Kyu Lee

2017-05-01

Full Text Available We propose a nanofabrication process to generate large-area arrays of noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol–gel (IGSG resist on glass using a two-layer polydimethylsiloxane (PDMS stamp followed by annealing, which turned the imprinted resist into pure silica. The transparent, topographic glass successfully templated the assembly of Au and Ag nanoparticle arrays via thin-film deposition and dewetting at elevated temperatures. The microstructural and mechanical characteristics that developed during the processes were discussed. The results are promising for low-cost mass fabrication of devices for several photonic applications.

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting.

Science.gov (United States)

Lee, Sun-Kyu; Hwang, Sori; Kim, Yoon-Kee; Oh, Yong-Jun

2017-01-01

We propose a nanofabrication process to generate large-area arrays of noble metal nanoparticles on glass substrates via nanoimprinting and dewetting of metallic thin films. Glass templates were made via pattern transfer from a topographic Si mold to an inorganically cross-linked sol-gel (IGSG) resist on glass using a two-layer polydimethylsiloxane (PDMS) stamp followed by annealing, which turned the imprinted resist into pure silica. The transparent, topographic glass successfully templated the assembly of Au and Ag nanoparticle arrays via thin-film deposition and dewetting at elevated temperatures. The microstructural and mechanical characteristics that developed during the processes were discussed. The results are promising for low-cost mass fabrication of devices for several photonic applications.

Energy harvesting efficiency of piezoelectric polymer film with graphene and metal electrodes.

Science.gov (United States)

Park, Sanghoon; Kim, Yura; Jung, Hyosub; Park, Jun-Young; Lee, Naesung; Seo, Yongho

2017-12-11

In this study, we investigated an energy harvesting effect of tensile stress using piezoelectric polymers and flexible electrodes. A chemical-vapor-deposition grown graphene film was transferred onto both sides of the PVDF and P(VDF-TrFE) films simultaneously by means of a conventional wet chemical method. Output voltage induced by sound waves was measured and analyzed when a mechanical tension was applied to the device. Another energy harvester was made with a metallic electrode, where Al and Ag were deposited by using an electron-beam evaporator. When acoustic vibrations (105 dB) were applied to the graphene/PVDF/graphene device, an induced voltage of 7.6 V pp was measured with a tensile stress of 1.75 MPa, and this was increased up to 9.1 V pp with a stress of 2.18 MPa for the metal/P(VDF-TrFE)/metal device. The 9 metal/PVDF/metal layers were stacked as an energy harvester, and tension was applied by using springs. Also, we fabricated a full-wave rectifying circuit to store the electrical energy in a 100 μF capacitor, and external vibration generated the electrical charges. As a result, the stored voltage at the capacitor, obtained from the harvester via a bridge diode rectifier, was saturated to ~7.04 V after 180 s charging time.

Microstructural, thermal and mechanical behavior of co-sputtered binary Zr–Cu thin film metallic glasses

Energy Technology Data Exchange (ETDEWEB)

Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Steyer, P., E-mail: philippe.steyer@insa-lyon.fr [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Joly-Pottuz, L. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Billard, A. [LERMPS-UTBM, Site de Montbéliard, 90010 Belfort Cédex (France); Qiao, J.; Cardinal, S. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Sanchette, F. [LASMIS-UTT, UMR CNRS 6279, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Pelletier, J.M.; Esnouf, C. [MATEIS Laboratory-INSA de Lyon, Bât. B. Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

2014-06-30

Bulk metallic glasses have attracted considerable attention over the last decades for their outstanding mechanical features (high strength, super-elasticity) and physico-chemical properties (corrosion resistance). Recently, some attempts to assign such original behavior from bulk materials to modified surfaces have been reported in the literature based on multicomponent alloys. In this paper we focused on the opportunity to form a metallic glass coating from the binary Zr–Cu system using a magnetron co-sputtering physical vapor deposition process. The composition of the films can be easily controlled by the relative intensities applied to both pure targets, which made possible the study of the whole Zr–Cu system (from 13.4 to 85.0 at.% Cu). The chemical composition of the films was obtained by energy dispersive X-ray spectroscopy, and their microstructure was characterized by scanning and transmission electron microscopy. The thermal stability of the films was deduced from an in situ X-ray diffraction analysis (from room temperature up to 600 °C) and correlated with the results of the differential scanning calorimetry technique. Their mechanical properties were determined by nanoindentation experiments. - Highlights: • We reported deposition of Zr-Cu thin film metallic glasses by co-sputtering • Films were XRD-amorphous in a wide composition range (33.3 – 85.0 at.% Cu) • Microstructure investigation revealed some local nanodomains • We examined the thermal stability by means of in situ X-ray diffraction • Nanoindentation was used to obtained mechanical properties of thin films.

Elaboration of strontium ruthenium oxide thin films on metal substrates by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Seveno, R. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)]. E-mail: raynald.seveno@univ-nantes.fr; Braud, A. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France); Gundel, H.W. [Universite de Nantes, Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique (IREENA), 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3 (France)

2005-12-22

In order to improve the structural interface between a metal substrate and a lead zirconate titanate (Pb(ZrTi)O{sub 3}, PZT) ferroelectric thin film, the elaboration of strontium ruthenium oxide (SrRuO{sub 3}) by chemical solution deposition is studied. The SrRuO{sub 3} thin films were realized by multiple spin-coating technique and the temperature of the rapid thermal annealing process was optimized. The crystallization behavior was examined by X-ray diffraction; surface analyses using scanning electron microscope and atomic force microscope techniques showed the influence of the SrRuO{sub 3} layer at the interface PZT/metal on the morphology of the ferroelectric thin film. From the electrical measurements, a coercive electric field around 25 kV/cm and a remanent polarization of approximately 30 {mu}C/cm were found.

Photoelectrochemical properties and band structure of oxide films on zirconium-transition metal alloys

International Nuclear Information System (INIS)

Takahashi, Kazuo; Uno, Masayoshi; Okui, Mihoko; Yamanaka, Shinsuke

2006-01-01

The microalloying effects of 4d and 5d transition metals, M (M: Nb, Mo, Ta, W) on the photoelectrochemical properties, the flat band potential (U fb ) and the band gap energy (E g ), for zirconium oxide films were investigated by photoelectrochemical measurements and band calculation. Button ingots of zirconium-5 mol% M (M: Nb, Mo, Ta, W) were made from high-purity metals (99.9% purity) by arc melting in a purified argon atmosphere. These plate specimens were sealed into silica tubes in vacuum, and then homogenized at 1273 K for 24 h. Subsequently, these specimens were oxidized up to 1173 K. The photocurrent of each specimen was evaluated at room temperature under the irradiation of Xe lamp (500 W) through grating monochrometer and cut-off filter. 0.1 M Na 2 SO 4 solution was used as the electrolyte. The value of the flat band potential was higher and the value of the band gap energy was smaller than that of pure zirconium oxide film in all sample. It was found from the calculation by CASTEP code that the decreases in band gap energy of these oxide films was due to formation of 4d or 5d orbital of transition metals

Use of fluorescent-metal intensifying screens with RT-type films for X-ray radiography using pulse devices

International Nuclear Information System (INIS)

Morgovskij, L.Ya.; Khakim'yanov, R.R.

1985-01-01

A study was made on characteristics of combination of fluorescent-metal Kyokko SMP-308 (Japan) and RCF (Agfa-Gevert) screens with domestic X-ray RT-1, RT-2, RT-5 films. Pulse X-ray MIRA-3D and NORA devices at 200 kV voltage amplitude in X-ray tube were used as radiation source. Testing was conducted for steel samples of 5-40 mm thickness. Comparative exposures for various film combinations with fluorescent-metal screens, fluorescent VP-2 screens and lead foils of 27 μm thickness were determined at that. It is shown that fluorescent-metal screens can be successfully applied with domestic X-ray technical films. They enable to decrease exposure by one order with insignificant deterioration of sensitivity. It is important for testing of pipeline welds

Nanoscale strengthening mechanisms in metallic thin film systems

Science.gov (United States)

Schoeppner, Rachel Lynn

Nano-scale strengthening mechanisms for thin films were investigated for systems governed by two different strengthening techniques: nano-laminate strengthening and oxide dispersion strengthening. Films were tested under elevated temperature conditions to investigate changes in deformation mechanisms at different operating temperatures, and the structural stability. Both systems exhibit remarkable stability after annealing and thus long-term reliability. Nano-scale metallic multilayers with smaller layer thicknesses show a greater relative resistance to decreasing strength at higher temperature testing conditions than those with larger layer thicknesses. This is seen in both Cu/Ni/Nb multilayers as well as a similar tri-component bi-layer system (Cu-Ni/Nb), which removed the coherent interface from the film. Both nanoindentation and micro-pillar compression tests investigated the strain-hardening ability of these two systems to determine what role the coherent interface plays in this mechanism. Tri-layer films showed a higher strain-hardening ability as the layer thickness decreased and a higher strain-hardening exponent than the bi-layer system: verifying the presence of a coherent interface increases the strain-hardening ability of these multilayer systems. Both systems exhibited hardening of the room temperature strength after annealing, suggesting a change in microstructure has occurred, unlike that seen in other multilayer systems. Oxide dispersion strengthened Au films showed a marked increase in hardness and wear resistance with the addition of ZnO particles. The threshold for stress-induced grain-refinement as opposed to grain growth is seen at concentrations of at least 0.5 vol%. These systems exhibited stable microstructures during thermal cycling in films containing at least 1.0%ZnO. Nanoindentation experiments show the drop in hardness following annealing is almost completely attributed to the resulting grain growth. Four-point probe resistivity

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

CERN Document Server

Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

International Nuclear Information System (INIS)

Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

Patterning of metallic electrodes on flexible substrates for organic thin-film transistors using a laser thermal printing method

International Nuclear Information System (INIS)

Chen, Kun-Tso; Lin, Yu-Hsuan; Ho, Jeng-Rong; Chen, Chih-Kant; Liu, Sung-Ho; Liao, Jin-Long; Cheng, Hua-Chi

2011-01-01

We report on a laser thermal printing method for transferring patterned metallic thin films on flexible plastic substrates using a pulsed CO 2 laser. Aluminium and silver line patterns, with micrometre scale resolution on poly(ethylene terephthalate) substrates, are shown. The printed electrodes demonstrate good conductivity and fulfil the properties for bottom-contact organic thin-film transistors. In addition to providing the energy for transferring the film, the absorption of laser light results in a rise in the temperature of the film and the substrate. This also further anneals the film and softens the plastic substrate. Consequently, it is possible to obtain a film with better surface morphology and with its film thickness implanted in part into the plastic surface. This implantation reveals excellent characteristics in adhesion and flexure resistance. Being feasible to various substrates and executable at ambient temperatures renders this approach a potential alternative for patterning metallic electrodes.

Alloying behaviour of electroplated Ag film with its underlying Pd/Ti film stack for low resistivity interconnect metallization

International Nuclear Information System (INIS)

Ezawa, Hirokazu; Miyata, Masahiro; Tatsumi, Kohei

2014-01-01

Highlights: • Alloying behavior of Ag/Pd/Ti film stack was studied by annealing at 400-800 °C. • The Ag film resistivity decreased with increasing annealing temperature. • Formation of the Pd-Ti intermetallics was found to be dominant over Ag-Pd alloying. • The excess Ti was consumed to form Ti oxides, which inhibited Ti alloying with Ag. -- Abstract: In this paper, viability of electroplated Ag film into device application was studied. Alloying behavior of the Ag film with its underlying Pd(50 nm)/Ti(100 nm) film stack was investigated with respect to heat treatment at different temperatures from 400 °C to 800 °C in an argon ambient. After annealing at 400 °C, the electrical resistivity of the Ag film increased due to Pd alloying with Ag. Formation of Pd–Ti intermetallic phases became dominant over Ag–Pd alloying with increasing annealing temperature, leading to the resistivity decrease of the Ag film. The resistivity of the 800 °C annealed Ag film approached that of its as-plated Ag film. The excess Ti atoms which were not consumed to form the intermetallic phases with the Pd atoms migrated to the Ag film surface to form Ti oxides along the Ag grain boundaries on the topmost film surface. The Ag/Pd/Ti film stack has been confirmed to maintain the resistivity of the Ag film at as-plated low levels after high temperature annealing. This paper also discusses process integration issues to enable the Ag metallization process for future scaled and three dimensionally chip stacked devices

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

Science.gov (United States)

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Selective Metallization of Well Aligned PS-b-P2VP Block Copolymers in Thin Films and in Confined Geometries

Science.gov (United States)

Sievert, James D.; Watkins, James J.; Russell, Thomas P.

2006-03-01

Well aligned, microphase-separated structures of styrene-2-vinylpyridine block copolymers are being used as templates for macromolecule-metal nanocomposites. These composites are either prepared as thin films or confined in nanoporous aluminum oxide membranes. Under optimal conditions, templates are prepared as thin films or confined nanorods and metallized without disturbing the ordered structure. We have developed a procedure that deposits metal within the polymer using supercritical carbon dioxide-soluble metal precursors. The use of supercritical carbon dioxide allows for selective metallization of the polymer at or below the glass transition, without disrupting the morphology. In addition, similar procedures have been investigated using metal salts and acids. Using these techniques, metals and metal-sulfides including silver, gold, platinum and zinc sulfide have been selectively deposited.

Developments in hot-filament metal oxide deposition (HFMOD)

Energy Technology Data Exchange (ETDEWEB)

Durrant, Steven F. [Laboratorio de Plasmas Tecnologicos, Campus Experimental de Sorocaba, Universidade Estadual Paulista (UNESP), Avenida Tres de Marco, 511, Alto de Boa Vista, 18087-180 Sorocaba, SP (Brazil)], E-mail: steve@sorocaba.unesp.br; Trasferetti, Benedito C. [Departamento de Policia Federal, Superintendencia Regional no Piaui, Setor Tecnico-Cientifico, Avenida Maranhao, 1022/N, 64.000-010, Teresina, PI (Brazil); Scarminio, Jair [Departamento de Fisica, Universidade Estadual de Londrina (UEL), 86051-990, Londrina, PR (Brazil); Davanzo, Celso U. [Instituto de Quimica, Universidade Estadual de Campinas (UNICAMP), 13083-970, Campinas, SP (Brazil); Rouxinol, Francisco P.M.; Gelamo, Rogerio V.; Bica de Moraes, Mario A. [Laboratorio de Processos de Plasma, Departamento de Fisica Aplicada, Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas (UNICAMP), 13083-970, Campinas, SP (Brazil)

2008-01-15

Hot-filament metal oxide deposition (HFMOD) is a variant of conventional hot-filament chemical vapor deposition (HFCVD) recently developed in our laboratory and successfully used to obtain high-quality, uniform films of MO{sub x}, WO{sub x} and VO{sub x}. The method employs the controlled oxidation of a filament of a transition metal heated to 1000 deg. C or more in a rarefied oxygen atmosphere (typically, of about 1 Pa). Metal oxide vapor formed on the surface of the filament is transported a few centimetres to deposit on a suitable substrate. Key system parameters include the choice of filament material and diameter, the applied current and the partial pressures of oxygen in the chamber. Relatively high film deposition rates, such as 31 nm min{sup -1} for MoO{sub x}, are obtained. The film stoichiometry depends on the exact deposition conditions. MoO{sub x} films, for example, present a mixture of MoO{sub 2} and MoO{sub 3} phases, as revealed by XPS. As determined by Li{sup +} intercalation using an electrochemical cell, these films also show a colouration efficiency of 19.5 cm{sup 2} C{sup -1} at a wavelength of 700 nm. MO{sub x} and WO{sub x} films are promising in applications involving electrochromism and characteristics of their colouring/bleaching cycles are presented. The chemical composition and structure of VO{sub x} films examined using IRRAS (infrared reflection-absorption spectroscopy), RBS (Rutherford backscattering spectrometry) and XPS (X-ray photoelectron spectrometry) are also presented.

Relationship between oxide film structures and corrosion resistance of SUS 304 L stainless steel in high temperature pure water

International Nuclear Information System (INIS)

Yamanaka, Kazuo; Matsuda, Yasushi.

1990-01-01

The effect of various oxidation conditions on metal release of SUS304L stainless steels in deaerated pure water at 488 K was investigated. The behavior of metal release was also discussed in relation to the surface films which were formed by various oxidation treatments. The results obtained are as follows: (1) The oxidation treatment in high purity argon gas at high temperatures for short time such as 1273 K - 2 min (120S) was effective to decrease the metal dissolution, and the oxide films primarily consisted of spinel type double oxide layer containing high concentration of Mn and Cr. (2) The oxidation treatments in non-deaerated pure water at 561 K for 24∼336 h (86.4∼1209.6 ks) were furthermore effective to decrease the metal dissolution. (3) It may be concluded that the key factors controlling the metal release are thickness, structure and compactness together with compositions of surface oxide films. (author)

Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

International Nuclear Information System (INIS)

Yuk, J. M.; Lee, J. Y.; Kim, Y.; No, Y. S.; Kim, T. W.; Choi, W. K.

2010-01-01

High-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy results showed that metallic Zn nanodots (NDs) were fabricated through transformation of ZnO thin films by deposition of SiO x on ZnO/n-Si (100) heterostructures. The Zn NDs with various sizes and densities were formed due to the occurrence of the mass diffusion of atoms along the grain boundaries in the ZnO thin films. The fabrication mechanisms of metallic Zn NDs through transformation of ZnO thin films deposited on n-Si substrates are described on the basis of the experimental results.

Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

International Nuclear Information System (INIS)

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2007-01-01

A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO 2 ). The formulation combines the approach of Mullins [W. W. Mullins, J. Appl. Phys. 30, 77 (1959)] for bulk surfaces, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer et al. [B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 26 (1991)] to describe solid-state transport in thin films under epitaxial strain. Modifications of the Mullins model to account for thin-film boundary conditions result in qualitatively different dispersion relationships especially in the limit as kh o o is the unperturbed film height. The model is applied to study the relative rate of solid-state mass transport as compared to that of liquid phase dewetting in a thin film subjected to a fast thermal pulse. Specifically, we have recently shown that multiple cycles of nanosecond (ns) pulsed laser melting and resolidification of ultrathin metal films on amorphous substrates can lead to the formation of various types of spatially ordered nanostructures [J. Trice, D. Thomas, C. Favazza, R. Sureshkumar, and R. Kalyanaraman, Phys. Rev. B 75, 235439 (2007)]. The pattern formation has been attributed to the dewetting of the thin film by a hydrodynamic instability. In such experiments the film is in the solid state during a substantial fraction of each thermal cycle. However, results of a linear stability analysis based on the aforementioned model suggest that solid-state mass transport has a negligible effect on morphological changes of the surface. Further, a qualitative analysis of the effect of thermoelastic stress, induced by the rapid temperature changes in the film-substrate bilayer, suggests that stress relaxation does not appreciably contribute to surface deformation. Hence, surface deformation caused by liquid

Plasma metallization

International Nuclear Information System (INIS)

Crowther, J.M.

1997-09-01

Many methods are currently used for the production of thin metal films. However, all of these have drawbacks associated with them, for example the need for UHV conditions, high temperatures, exotic metal precursors, or the inability to coat complex shaped objects. Reduction of supported metal salts by non-isothermal plasma treatment does not suffer from these drawbacks. In order to produce and analyse metal films before they become contaminated, a plasma chamber which could be attached directly to a UHV chamber with XPS capability was designed and built. This allowed plasma treatment of supported metal salts and surface analysis by XPS to be performed without exposure of the metal film to the atmosphere. Non-equilibrium plasma treatment of Nylon 66 supported gold(lll) chloride using hydrogen as the feed gas resulted in a 95% pure gold film, the remaining 5% of the film being carbon. If argon or helium were used as the feed gases during plasma treatment the resultant gold films were 100% pure. Some degree of surface contamination of the films due to plasma treatment was observed but was easily removed by argon ion cleaning. Hydrogen plasma reduction of glass supported silver(l) nitrate and palladium(ll) acetate films reveals that this metallization technique is applicable to a wide variety of metal salts and supports, and has also shown the ability of plasma reduction to retain the complex 'fern-like' structures seen for spin coated silver(l) nitrate layers. Some metal salts are susceptible to decomposition by X-rays. The reduction of Nylon 66 supported gold(lll) chloride films by soft X-rays to produce nanoscopic gold particles has been studied. The spontaneous reduction of these X-ray irradiated support gold(lll) chloride films on exposure to the atmosphere to produce gold rich metallic films has also been reported. (author)

Imaging optical fields below metal films and metal-dielectric waveguides by a scanning microscope

Science.gov (United States)

Zhu, Liangfu; Wang, Yong; Zhang, Douguo; Wang, Ruxue; Qiu, Dong; Wang, Pei; Ming, Hai; Badugu, Ramachandram; Rosenfeld, Mary; Lakowicz, Joseph R.

2017-09-01

Laser scanning confocal fluorescence microscopy (LSCM) is now an important method for tissue and cell imaging when the samples are located on the surfaces of glass slides. In the past decade, there has been extensive development of nano-optical structures that display unique effects on incident and transmitted light, which will be used with novel configurations for medical and consumer products. For these applications, it is necessary to characterize the light distribution within short distances from the structures for efficient detection and elimination of bulky optical components. These devices will minimize or possibly eliminate the need for free-space light propagation outside of the device itself. We describe the use of the scanning function of a LSCM to obtain 3D images of the light intensities below the surface of nano-optical structures. More specifically, we image the spatial distributions inside the substrate of fluorescence emission coupled to waveguide modes after it leaks through thin metal films or dielectric-coated metal films. The observed spatial distribution were in general agreement with far-field calculations, but the scanning images also revealed light intensities at angles not observed with classical back focal plane imaging. Knowledge of the subsurface optical intensities will be crucial in the combination of nano-optical structures with rapidly evolving imaging detectors.

Metal ion modulated ultrathin films and nanostructures of tyrosine-based bolaamphiphile at the air/water interface

International Nuclear Information System (INIS)

Jiao Tifeng; Cheng Caixia; Xi Fu; Liu Minghua

2006-01-01

Supramolecular assemblies at the air/water interface from a newly designed tyrosine-based bolaamphiphile, 1,10-bis(O-L-tyrosine)-decane (C10BT), were investigated. The compound could be spread on water surface and form organized ultrathin film. It was interesting to find that metal ions such as Ag + and Cu 2+ in the subphase can greatly modulate the molecular packing of C10BT and the morphology of the subsequently deposited Langmuir-Blodgett (LB) films. Atomic force microscopic measurements revealed that C10BT LB film from the subphase containing Ag + ion showed well-ordered layered nanofibers, while Cu 2+ ion coordinated C10BT film demonstrated dense cross-linked network. It was suggested that both the strong chelating property to the carboxylate and the different packing mode of hydrocarbon chain resulted in the distinct nanostructures. Fourier transform infrared spectra reveal the difference between the Ag-C10BT complex film and that of Cu 2+ ion, and the mechanism of the packing mode of hydrocarbon chain was discussed. Furthermore, the X-ray diffraction and X-ray photoelectron spectra also verified the orderly layer structure and the relative molar ratios compared with different metal ions. While many efforts have been devoted to manipulation of the nanostructures and functions of sophisticated bolaform amphiphiles, we provided a simple method of modulating the organization and morphology of C10BT films through metal ions

Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

Energy Technology Data Exchange (ETDEWEB)

Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

2017-02-15

Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

Imprinting of metal receptors into multilayer polyelectrolyte films: fabrication and applications in marine antifouling

NARCIS (Netherlands)

Puniredd, S.R.; Janczewski, D.; Go, D.P.; Zhu, X.; Guo, S.; Teo, S.L-M.; Lee, S.S.C.; Vancso, Gyula J.

2015-01-01

Polymeric films constructed using the layer-by-layer (LbL) fabrication process were employed as a platform for metal ion immobilization and applied as a marine antifouling coating. The novel Cu2+ ion imprinting process described is based on the use of metal ion templates and LbL multilayer covalent

Investigation of cosputtered W--C thin films as diffusion barriers

International Nuclear Information System (INIS)

Yang, H.Y.; Zhao, X.

1988-01-01

Polycrystalline thin films of W--C were deposited on single-crystal Si or SiO 2 substrates by rf planar magnetron cosputtering of graphite (C) and W targets. The performance of cosputtered W 75 C 25 thin films as diffusion barriers between a Si substrate and metallic overlayers of Ag, Au, or Al was investigated. Backscattering spectrometry and x-ray diffraction are used to detect metallurgical interactions. Four-point probe measurement of resistance is employed to monitor the electrical stability of the metallization schemes upon thermal annealing in a vacuum for 30 min in temperature ranges from 500 to 700 0 C. The electrical resistivity of W 75 C 25 films is 140 μΩ cm. A W 75 C 25 layer 1100 A thick prevents metallurgical interdiffusion and reaction between Au or Ag overlayers and the Si substrates up to 700 0 C, and between an Al overlayer and the Si substrate up to 450 0 C.tential

Structural and Optical Properties of ZnO Thin Film Prepared by Oxidation of Zn Metal Powders

International Nuclear Information System (INIS)

Hassan, N.K.; Hashim, M.R.

2013-01-01

High quality ZnO nano structures have been fabricated at room temperature by a simple vacuum thermal evaporator from metallic Zn powders (99.999 % purity) on a silicon (100) substrate. The Zn thin films were then transferred into a thermal tube furnace for oxidation at 700 degree Celsius for different time durations. Time was found to be a critical factor in the synthesis. This was followed by characterization of their morphological, structural and optical properties. The morphology of the grown ZnO nano structures exhibited several large grains, which increased gradually with increasing oxidation time. The crystallinity of the grown nano structures was investigated using X-ray diffraction, revealing that the synthesized ZnO was in hexagonal wurtzite phase. The photoluminescence (PL) spectra of the fabricated ZnO nano structures showed high intensity peak in the UV region due to near-band-edge (NBE) emission in which the structures oxidized for 30 min showing highest intensity. (author)

The spatial thickness distribution of metal films produced by large area pulsed laser deposition

DEFF Research Database (Denmark)

Pryds, Nini; Schou, Jørgen; Linderoth, Søren

2007-01-01

Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 127...

Morphological and structural characterizations of dendrimer-mediated metallic Ti and Al thin film nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Curry, M. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Li, X. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Zhang, J. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Weaver, M.L. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Street, S.C. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States) and Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States)]. E-mail: sstreet@bama.ua.edu

2007-02-26

Evidence is presented here for significant influence on the surface topography of Ti and Al films in the presence of poly(amidoamine) dendrimer monolayers [generations G(4-8)] on SiO {sub x}. X-ray photoelectron spectroscopy analysis clearly indicates formation of nitrides and carbides for Ti metal grown on dendrimer monolayers. In addition, obvious trends in measured correlation lengths and crystalline growth modes of Ti films indicate grain sizes tracking the intrinsic roughness of dendrimer monolayers. No formation of metal nitride is observed for Al depositions. Atomic force microscopy analyses show significant changes in rms vertical roughness and aggregation of as-deposited Ti or Al in presence of dendrimer monolayers.

The influence of nanoscale morphology on the resistivity of cluster-assembled nanostructured metallic thin films

International Nuclear Information System (INIS)

Barborini, E; Bertolini, G; Repetto, P; Leccardi, M; Vinati, S; Corbelli, G; Milani, P

2010-01-01

We have studied in situ the evolution of the electrical resistivity of Fe, Pd, Nb, W and Mo cluster-assembled films during their growth by supersonic cluster beam deposition. We observed resistivity of cluster-assembled films several orders of magnitude larger than the bulk, as well as an increase in resistivity by increasing the film thickness in contrast to what was observed for atom-assembled metallic films. This suggests that the nanoscale morphological features typical of ballistic films growth, such as the minimal cluster-cluster interconnection and the evolution of surface roughness with thickness, are responsible for the observed behaviour.

Tracking metal ions with polypyrrole thin films adhesively bonded to diazonium-modified flexible ITO electrodes.

Science.gov (United States)

Lo, Momath; Diaw, Abdou K D; Gningue-Sall, Diariatou; Aaron, Jean-Jacques; Oturan, Mehmet A; Chehimi, Mohamed M

2018-05-09

Adhesively bonded polypyrrole thin films doped with benzene sulfonic acid (BSA) were electrodeposited on aminobenzenediazonium-modified flexible ITO electrodes and further employed for the detection of Pb 2+ , Cu 2+ , and Cd 2+ metal ions in aqueous medium. The aminophenyl (AP) adhesive layer was grafted to ITO by electroreduction of the in situ generated parent diazonium compound. Polypyrrole (PPy) thin films exhibited remarkable adhesion to aminophenyl (ITO-AP). The strongly adherent polypyrrole films exhibited excellent electroactivity in the doped state with BSA which itself served to chelate the metal ions in aqueous medium. The surface of the resulting, modified flexible electrode was characterized by XPS, SEM, and electrochemical methods. The ITO-AP-PPy electrodes were then used for the simultaneous detection of Cu 2+ , Cd 2+ , and Pb 2+ by differential pulse voltammetry (DPV). The detection limits were 11.1, 8.95, and 0.99 nM for Cu 2+ , Cd 2+ , and Pb 2+ , respectively. In addition, the modified electrodes displayed a good reproducibility, making them suitable for the determination of heavy metals in real wastewater samples.

Phase coexistence in the metal-insulator transition of a VO2 thin film

International Nuclear Information System (INIS)

Chang, Y.J.; Koo, C.H.; Yang, J.S.; Kim, Y.S.; Kim, D.H.; Lee, J.S.; Noh, T.W.; Kim, Hyun-Tak; Chae, B.G.

2005-01-01

Vanadium dioxide (VO 2 ) shows a metal-insulator transition (MIT) near room temperature, accompanied by an abrupt resistivity change. Since the MIT of VO 2 is known to be a first order phase transition, it is valuable to check metallic and insulating phase segregation during the MIT process. We deposited (100)-oriented epitaxial VO 2 thin films on R-cut sapphire substrates. From the scanning tunneling spectroscopy (STS) spectra, we could distinguish metallic and insulating regions by probing the band gap. Optical spectroscopic analysis also supported the view that the MIT in VO 2 occurs through metal and insulator phase coexistence

Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

DEFF Research Database (Denmark)

Reolon, R. P.; Sanna, S.; Xu, Yu

2018-01-01

A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte......, electrochemical performances are steady, indicating the stability of the cell. Under electrical load, a progressive degradation is activated. Post-test analysis reveals both mechanical and chemical degradation of the cell. Cracks and delamination of the thin films promote a significant nickel diffusion and new...

Experimental observation of percolation-enhanced nonlinear light scattering from semicontinuous metal films

Science.gov (United States)

Breit, M.; Podolskiy, V. A.; Grésillon, S.; von Plessen, G.; Feldmann, J.; Rivoal, J. C.; Gadenne, P.; Sarychev, Andrey K.; Shalaev, Vladimir M.

2001-09-01

Strongly enhanced second-harmonic generation (SHG), which is characterized by a nearly isotropic intensity distribution, is observed for gold-glass films near the percolation threshold. The diffuselike SHG scattering, which can be thought of as nonlinear critical opalescence, is in sharp contrast with highly collimated linear reflection and transmission from these nanostructured semicontinuous metal films. Our observations, which can be explained by giant fluctuations of local nonlinear sources for SHG due to plasmon localization, verify recent predictions of percolation-enhanced nonlinear scattering.

Modeling film uniformity and symmetry in ionized metal physical vapor deposition with cylindrical targets

International Nuclear Information System (INIS)

Lu Junqing; Yang Lin; Yoon, Jae Hong; Cho, Tong Yul; Tao Guoqing

2008-01-01

Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed to investigate deposition uniformity and symmetry for cylindrical target sputtering in low pressure (below 0.1 Pa) ionized Cu physical vapor deposition. The model predictions indicate that as the distance from the cylindrical target to wafer increases, the metal film thickness becomes more uniform across the wafer and the asymmetry of the metal deposits at the wafer edge increases significantly. These trends are similar to those for planar targets. To minimize the asymmetry, the height of the cylindrical target should be kept at a minimum. For cylindrical targets, the outward-facing sidewall of the trench could receive more direct Cu fluxes than the inward-facing one when the target to wafer distance is short. The predictions also indicate that increasing the diameter of the cylindrical target could significantly reduce the asymmetry in metal deposits at the wafer edge and make the film thickness more uniform across the wafer

FIB NANOPATTERNING OF METAL FILMS ON PMMA SUBSTRATES: NON-SPUTTERING MODE

DEFF Research Database (Denmark)

Tavares, Luciana; Adashkevich, Vadzim; Chiriaev, Serguei

polymer materials, which results in material shrinkage in the irradiated areas [2]. In this work, we demonstrate that this mechanism can be used for nanopatterning thin metal films deposited on PMMA resist spin-coated onto a silicon substrate. For this purpose, the samples were irradiated with He+ FIB...

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Science.gov (United States)

Cieslak, W. R.; Delnick, F. M.; Peebles, D. E.; Rogers, J. W., Jr.

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/SOCl solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

Characteristics of indirect laser-induced plasma from a thin film of oil on a metallic substrate

Science.gov (United States)

Xiu, Jun-Shan; Bai, Xue-Shi; Motto-Ros, Vincent; Yu, Jin

2015-04-01

Optical emissions from the major and trace elements embodied in a transparent gel prepared from cooking oil were detected after the gel was spread in a thin film on a metallic substrate. Such emissions are due to the indirect breakdown of the coating layer. The generated plasma, a mixture of substances from the substrate, the layer, and the ambient gas, was characterized using emission spectroscopy. The characteristics of the plasma formed on the metal with and without the coating layer were investigated. The results showed that Al emission induced from the aluminum substrates coated with oil films extends away from the target surface to ablate the oil film. This finally formed a bifurcating circulation of aluminum vapor against a spherical confinement wall in the front of the plume, which differed from the evolution of the plasma induced from the uncoated aluminum target. The strongest emissions of elements from the oil films can be observed at 2 mm above the target after a detection delay of 1.0 μs. A high temperature zone has been observed in the plasma after the delay of 1.0 μs for the plasma induced from the coated metal. This higher temperature determined in the plasma allows the consideration of the sensitive detection of trace elements in liquids, gels, biological samples, or thin films.

Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu{sub 2}SnSe{sub 3} source

Energy Technology Data Exchange (ETDEWEB)

Sabli, Nordin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang (Malaysia); Zainal, Zulkarnain [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang (Malaysia); Hilal, Hikmat S. [SSERL, Department of Chemistry An-Najah N. University, PO Box 7, Nablus, West Bank (Country Unknown); Fujii, Masatoshi [Department of Molecular Science, School of Medicine, Shimane University, Izumo, Shimane, 693-8501 (Japan)

2014-03-05

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu{sub 2}SnSe{sub 3} sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (V{sub A} = 25 cm{sup 3}/min). Higher value of photoresponse was observed for films deposited under V{sub A} = 25 cm{sup 3}/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

2014-11-15

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

Large-Grain Tin-Rich Perovskite Films for Efficient Solar Cells via Metal Alloying Technique.

Science.gov (United States)

Tavakoli, Mohammad Mahdi; Zakeeruddin, Shaik Mohammed; Grätzel, Michael; Fan, Zhiyong

2018-03-01

Fast research progress on lead halide perovskite solar cells has been achieved in the past a few years. However, the presence of lead (Pb) in perovskite composition as a toxic element still remains a major issue for large-scale deployment. In this work, a novel and facile technique is presented to fabricate tin (Sn)-rich perovskite film using metal precursors and an alloying technique. Herein, the perovskite films are formed as a result of the reaction between Sn/Pb binary alloy metal precursors and methylammonium iodide (MAI) vapor in a chemical vapor deposition process carried out at 185 °C. It is found that in this approach the Pb/Sn precursors are first converted to (Pb/Sn)I 2 and further reaction with MAI vapor leads to the formation of perovskite films. By using Pb-Sn eutectic alloy, perovskite films with large grain sizes up to 5 µm can be grown directly from liquid phase metal. Consequently, using an alloying technique and this unique growth mechanism, a less-toxic and efficient perovskite solar cell with a power conversion efficiency (PCE) of 14.04% is demonstrated, while pure Sn and Pb perovskite solar cells prepared in this manner yield PCEs of 4.62% and 14.21%, respectively. It is found that this alloying technique can open up a new direction to further explore different alloy systems (binary or ternary alloys) with even lower melting point. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

International Nuclear Information System (INIS)

Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

2014-01-01

Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

International Nuclear Information System (INIS)

Bui, Thanh Nhan; Raskin, Jean-Pierre; Hackens, Benoit

2016-01-01

Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (T_d_e_p) ranges from room temperature up to 170 °C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For T_d_e_p above 80 °C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for T_d_e_p above 80 °C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films.

Heat capacity measurements of atoms and molecules adsorbed on evaporated metal films

International Nuclear Information System (INIS)

Kenny, T.W.

1989-05-01

Investigations of the properties of absorbed monolayers have received great experimental and theoretical attention recently, both because of the importance of surface processes in practical applications such as catalysis, and the importance of such systems to the understanding of the fundamentals of thermodynamics in two dimensions. We have adapted the composite bolometer technology to the construction of microcalorimeters. For these calorimeters, the adsorption substrate is an evaporated film deposited on one surface of an optically polished sapphire wafer. This approach has allowed us to make the first measurements of the heat capacity of submonolayer films of 4 He adsorbed on metallic films. In contrast to measurements of 4 He adsorbed on all other insulating substrates, we have shown that 4 He on silver films occupies a two-dimensional gas phase over a broad range of coverages and temperatures. Our apparatus has been used to study the heat capacity of Indium flakes. CO multilayers, 4 He adsorbed on sapphire and on Ag films and H 2 adsorbed on Ag films. The results are compared with appropriate theories. 68 refs., 19 figs

A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

International Nuclear Information System (INIS)

Choi, S. M.; Shin, G. M.; Joo, Y.S.; Yoo, S. I.

2013-01-01

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped YBa 2 Cu 3 O 7-δ (YBCO) films with the same thickness of ∽350 nm for a comparative purpose. The films were prepared on the SrTiO 3 (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density (J c ) and pinning force density (F p ). The anisotropic J c ,min/J c ,max ratio in the field-angle dependence of J c at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic J c values of 9.0 and 2.9 MA/cm 2 with the maximum F p (F p ,max) values of 19 and 5 GN/m 3 at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller BaZrO-3 (BZO) nanoparticles (the average size ≈ 28.4 nm) than YBa 2 SnO 5. 5 (YBSO) nanoparticles (the average size ≈ 45.0 nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

International Nuclear Information System (INIS)

Deram, V.; Turrell, S.; Darque-Ceretti, E.; Aucouturier, M.

2006-01-01

Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy

Photoswitchable nanoporous films by loading azobenzene in metal-organic frameworks of type HKUST-1.

Science.gov (United States)

Müller, Kai; Wadhwa, Jasmine; Singh Malhi, Jasleen; Schöttner, Ludger; Welle, Alexander; Schwartz, Heidi; Hermann, Daniela; Ruschewitz, Uwe; Heinke, Lars

2017-07-13

Photoswitchable metal-organic frameworks (MOFs) enable the dynamic remote control of their key properties. Here, a readily producible approach is presented where photochromic molecules, i.e. azobenzene (AB) and o-tetrafluoroazobenzene (tfAB), are loaded in MOF films of type HKUST-1. These nanoporous films, which can be reversibly switched with UV/visible or only visible light, have remote-controllable guest uptake properties.

Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Lu, Zihong

1995-01-01

The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

Spin-Hall conductivity and electric polarization in metallic thin films

KAUST Repository

Wang, Xuhui

2013-02-21

We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

Spin-Hall conductivity and electric polarization in metallic thin films

KAUST Repository

Wang, Xuhui; Xiao, Jiang; Manchon, Aurelien; Maekawa, Sadamichi

2013-01-01

We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

Synthesis and mechanical properties of Fe–Nb–B thin-film metallic glasses

International Nuclear Information System (INIS)

Yao, J.H.; Hostert, C.; Music, D.; Frisk, A.; Björck, M.; Schneider, J.M.

2012-01-01

Fe–Nb–B thin-film metallic glasses (TFMGs) were synthesized via a combinatorial sputtering approach to probe the property–composition correlation. The boron content was found to dominate the mechanical properties of the TFMGs. The ∼10% smaller strength of Fe–Nb–B TFMGs compared to existing bulk metallic glass with similar composition may be attributed to the absence of a network-like structure based on (Fe,M) 23 B 6 phase due to the extreme quenching conditions employed.

Nanocomposite metal/plasma polymer films prepared by means of gas aggregation cluster source

Energy Technology Data Exchange (ETDEWEB)

Polonskyi, O.; Solar, P.; Kylian, O.; Drabik, M.; Artemenko, A.; Kousal, J.; Hanus, J.; Pesicka, J.; Matolinova, I. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague 8 (Czech Republic); Kolibalova, E. [Tescan, Libusina trida 21, 632 00 Brno (Czech Republic); Slavinska, D. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague 8 (Czech Republic); Biederman, H., E-mail: bieder@kmf.troja.mff.cuni.cz [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague 8 (Czech Republic)

2012-04-02

Nanocomposite metal/plasma polymer films have been prepared by simultaneous plasma polymerization using a mixture of Ar/n-hexane and metal cluster beams. A simple compact cluster gas aggregation source is described and characterized with emphasis on the determination of the amount of charged clusters and their size distribution. It is shown that the fraction of neutral, positively and negatively charged nanoclusters leaving the gas aggregation source is largely influenced by used operational conditions. In addition, it is demonstrated that a large portion of Ag clusters is positively charged, especially when higher currents are used for their production. Deposition of nanocomposite Ag/C:H plasma polymer films is described in detail by means of cluster gas aggregation source. Basic characterization of the films is performed using transmission electron microscopy, ultraviolet-visible and Fourier-transform infrared spectroscopies. It is shown that the morphology, structure and optical properties of such prepared nanocomposites differ significantly from the ones fabricated by means of magnetron sputtering of Ag target in Ar/n-hexane mixture.

Invariance of the magnetic behavior and AMI in ferromagnetic biphase films with distinct non-magnetic metallic spacers

Energy Technology Data Exchange (ETDEWEB)

Silva, E.F. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Gamino, M. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Andrade, A.M.H. de [Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Vázquez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain); Correa, M.A. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Bohn, F., E-mail: felipebohn@fisica.ufrn.br [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

2017-02-01

We investigate the quasi-static magnetic, magnetotransport, and dynamic magnetic properties in ferromagnetic biphase films with distinct non-magnetic metallic spacer layers. We observe that the nature of the non-magnetic metallic spacer material does not have significant influence on the overall biphase magnetic behavior, and, consequently, on the magnetotransport and dynamic magnetic responses. We focus on the magnetoimpedance effect and verify that the films present asymmetric magnetoimpedance effect. Moreover, we explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the probe current frequency in order to achieve higher sensitivity values. The invariance of the magnetic behavior and the asymmetric magnetoimpedance effect in ferromagnetic biphase films with distinct non-magnetic metallic spacers place them as promising candidates for probe element and open possibilities to the development of lower-cost high sensitivity linear magnetic field sensor devices.

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

2014-01-01

We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

Metal-insulator transition in SrTi1−xVxO3 thin films

International Nuclear Information System (INIS)

Gu, Man; Wolf, Stuart A.; Lu, Jiwei

2013-01-01

Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

International Nuclear Information System (INIS)

Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

2014-01-01

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

Science.gov (United States)

Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

2014-01-01

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

Preparation of surface conductive and highly reflective silvered polyimide films by surface modification and in situ self-metallization technique

International Nuclear Information System (INIS)

Wu Zhanpeng; Wu Dezhen; Qi Shengli; Zhang Teng; Jin Riguang

2005-01-01

Double surface conductive and reflective flexible silvered polyimide films have been prepared by alkali hydroxylation of polyimide film surface and incorporation of silver ions through subsequent ion exchange. Thermal curing of silver(I) polyamate precursor leads to re-cycloimidization of modified surface with concomitant silver reduction, yielding a reflective and conductive silver surface approaching that of native metal. The reflective and conductive surface evolves only when the cure temperature rises to 300 deg. C. The metallized films usually retain the essential mechanical properties of the parent films. Films were characterized by transmission electron microscopy (TEM), scanning electron microscopy and tapping mode atomic force microscopy (AFM). AFM demonstrates that the diameter of close-packed silver particles of the silver layers was about 50-150 nm. TEM shows that thickness of silver layer on the polyimide film surface is about 400-600 nm

Tactile Sensing From Laser-Ablated Metallized PET Films

KAUST Repository

Nag, Anindya

2016-10-17

This paper reports the design, fabrication, and implementation of a novel sensor patch developed from commercial polyethylene terephthalate films metallized with aluminum on one side. The aluminum was ablated with laser to form interdigitated electrodes to make sensor prototypes. The interdigitated electrodes were patterned on the substrate with a laser cutter. Characterization of the prototypes was done to determine their operating frequency followed by experimentation. The prototypes have been used as a tactile sensor showing promising results for using these patches in applications with contact pressures considerably lesser than normal human contact pressure.

Electron confinement in thin metal films. Structure, morphology and interactions

Energy Technology Data Exchange (ETDEWEB)

Dil, J.H.

2006-05-15

This thesis investigates the interplay between reduced dimensionality, electronic structure, and interface effects in ultrathin metal layers (Pb, In, Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown with such a perfection that electron confinement in the direction normal to the film leads to the occurrence of quantum well states in their valence bands. These quantum well states are studied in detail, and their behaviour with film thickness, on different substrates, and other parameters of growth are used here to characterise a variety of physical properties of such nanoscale systems. The sections of the thesis deal with a determination of quantum well state energies for a large data set on different systems, the interplay between film morphology and electronic structure, and the influence of substrate electronic structure on their band shape; finally, new ground is broken by demonstrating electron localization and correlation effects, and the possibility to measure the influence of electron-phonon coupling in bulk bands. (orig.)

Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

Science.gov (United States)

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2007-11-01

A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO2). The formulation combines the approach of Mullins [W. W. Mullins, J. Appl. Phys. 30, 77 (1959)] for bulk surfaces, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer etal . [B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 26 (1991)] to describe solid-state transport in thin films under epitaxial strain. Modifications of the Mullins model to account for thin-film boundary conditions result in qualitatively different dispersion relationships especially in the limit as kho≪1, where k is the wavenumber of the perturbation and ho is the unperturbed film height. The model is applied to study the relative rate of solid-state mass transport as compared to that of liquid phase dewetting in a thin film subjected to a fast thermal pulse. Specifically, we have recently shown that multiple cycles of nanosecond (ns) pulsed laser melting and resolidification of ultrathin metal films on amorphous substrates can lead to the formation of various types of spatially ordered nanostructures [J. Trice, D. Thomas, C. Favazza, R. Sureshkumar, and R. Kalyanaraman, Phys. Rev. B 75, 235439 (2007)]. The pattern formation has been attributed to the dewetting of the thin film by a hydrodynamic instability. In such experiments the film is in the solid state during a substantial fraction of each thermal cycle. However, results of a linear stability analysis based on the aforementioned model suggest that solid-state mass transport has a negligible effect on morphological changes of the surface. Further, a qualitative analysis of the effect of thermoelastic stress, induced by the rapid temperature changes in the film-substrate bilayer, suggests that stress relaxation does not appreciably contribute to surface

Imprinting of metal receptors into multilayer polyelectrolyte films: fabrication and applications in marine antifouling

OpenAIRE

Puniredd, S.R.; Janczewski, D.; Go, D.P.; Zhu, X.; Guo, S.; Teo, S.L-M.; Lee, S.S.C.; Vancso, Gyula J.

2015-01-01

Polymeric films constructed using the layer-by-layer (LbL) fabrication process were employed as a platform for metal ion immobilization and applied as a marine antifouling coating. The novel Cu2+ ion imprinting process described is based on the use of metal ion templates and LbL multilayer covalent cross-linking. Custom synthesized, peptide mimicking polycations composed of histidine grafted poly(allylamine) (PAH) to bind metal ions, and methyl ester containing polyanions for convenient cross...

Thin-film composite materials as a dielectric layer for flexible metal-insulator-metal capacitors.

Science.gov (United States)

Tiwari, Jitendra N; Meena, Jagan Singh; Wu, Chung-Shu; Tiwari, Rajanish N; Chu, Min-Ching; Chang, Feng-Chih; Ko, Fu-Hsiang

2010-09-24

A new organic-organic nanoscale composite thin-film (NCTF) dielectric has been synthesized by solution deposition of 1-bromoadamantane and triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20), in which the precursor solution has been achieved with organic additives. We have used a sol-gel process to make a metal-insulator-metal capacitor (MIM) comprising a nanoscale (10 nm-thick) thin-film on a flexible polyimide (PI) substrate at room temperature. Scanning electron microscope and atomic force microscope revealed that the deposited NCTFs were crack-free, uniform, highly resistant to moisture absorption, and well adhered on the Au-Cr/PI. The electrical properties of 1-bromoadamantane-P123 NCTF were characterized by dielectric constant, capacitance, and leakage current measurements. The 1-bromoadamantane-P123 NCTF on the PI substrate showed a low leakage current density of 5.5 x 10(-11) A cm(-2) and good capacitance of 2.4 fF at 1 MHz. In addition, the calculated dielectric constant of 1-bromoadamantane-P123 NCTF was 1.9, making them suitable candidates for use in future flexible electronic devices as a stable intermetal dielectric. The electrical insulating properties of 1-bromoadamantane-P123 NCTF have been improved due to the optimized dipole moments of the van der Waals interactions.

Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

Energy Technology Data Exchange (ETDEWEB)

Morley, Neil B. [Univ. of California, Los Angeles, CA (United States)

1994-01-01

Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along {rvec B}. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization.

Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

International Nuclear Information System (INIS)

Morley, N.B.

1994-01-01

Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along rvec B. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization

Two-dimensional discrete dislocation models of deformation in polycrystalline thin metal films on substrates

International Nuclear Information System (INIS)

Hartmaier, Alexander; Buehler, Markus J.; Gao, Huajian

2005-01-01

The time-dependent irreversible deformation of polycrystalline thin metal films on substrates is investigated using two-dimensional discrete dislocation dynamics models incorporating essential parameters determined from atomistic studies. The work is focused on the mechanical properties of uncapped films, where diffusive processes play an important role. The simulations incorporate dislocation climb along the grain boundary as well as conservative glide. Despite of severe limitations of the two-dimensional dislocation models, the simulation results are found to largely corroborate experimental findings on different dominant deformation mechanisms at different film thicknesses

Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

2000-05-01

The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

Evaluation of diffusion barrier and electrical properties of tantalum oxynitride thin films for silver metallization

International Nuclear Information System (INIS)

Misra, E.; Wang, Y.; Theodore, N.D.; Alford, T.L.

2004-01-01

The thermal stability and the diffusion barrier properties of DC reactively sputtered tantalum oxynitride (Ta-O-N) thin films, between silver (Ag) and silicon (Si) p + n diodes were investigated. Both materials characterization (X-ray diffraction analysis, Rutherford backscattering spectrometry (RBS), Auger depth profiling) and electrical measurements (reverse-biased junction leakage current-density) were used to evaluate diffusion barrier properties of the thin films. The leakage current density of p + n diodes with the barrier (Ta-O-N) was approximately four orders of magnitude lower than those without barriers after a 30 min, 400 deg. C back contact anneal. The Ta-O-N barriers were stable up to 500 deg. C, 30 min anneals. However, this was not the case for the 600 deg. C anneal. RBS spectra and cross-sectional transmission electron microscopy of as-deposited and vacuum annealed samples of Ag/barrier (Ta-O-N)/Si indicate the absence of any interfacial interaction between the barrier and substrate (silicon). The failure of the Ta-O-N barriers has been attributed to thermally induced stresses, which cause the thin film to crack at elevated temperatures

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

Energy Technology Data Exchange (ETDEWEB)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

We have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides.

Passive film formation on metals in thionyl-chloride electrolytes for lithium batteries

International Nuclear Information System (INIS)

Cieslak, W.R.; Delnick, F.M.; Peebles, D.E.; Rogers, J.W. Jr.

1986-01-01

The authors have studied the anodic behavior of Pt, Mo, Ni, and stainless steel (SS) electrodes in 1.5M LiAlCl/sub 4//SOCl/sub 2/ solution in order to determine the mechanisms by which these metals resist corrosion. Polarization and complex impedance indicate that Pt and Mo behave as inert electrodes, while Ni and SS form passive films in this electrolyte. X-ray Photoelectron Spectroscopy (XPS) confirms the lack of oxidized metal species on the Pt and Mo surfaces following anodic polarization. XPS results also show that the Ni and SS do form passive layers, and identifies these layers as predominantly metal chlorides

On the spherical nanoindentation creep of metallic glassy thin films at room temperature

Energy Technology Data Exchange (ETDEWEB)

Zhang, T.H.; Ye, J.H. [Institution of Micro/Nano-Mechanical Testing Technology & Application, College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014 (China); Feng, Y.H. [State Key Laboratory of Nonlinear Mechanics (LNM), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Ma, Y., E-mail: may@zjut.edu.cn [Institution of Micro/Nano-Mechanical Testing Technology & Application, College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014 (China)

2017-02-08

Metallic glassy thin films with eight kind of compositions were successfully prepared on Si substrate by magnetron sputtering. The room-temperature creep tests were performed at plastic regions for each sample relying on spherical nanoindetation. The creep deformations were studied by recording the total creep displacement and strain after 2000 s holding. More pronounced creep deformation was observed in the sample with lower glass transition temperature (T{sub g}). Strain rate sensitivity (SRS) was then calculated from the steady-state creep and exhibited a negative correlation with increasing T{sub g}. It is suggested that creep mechanism of the nano-sized metallic glass was T{sub g}-dependent, according to the demarcation of SRS values. Based on the obtained SRS, shear transformation zone (STZ) size in each sample could be estimated. The results indicated that an STZ involves about 25–60 atoms for the employed eight samples and is strongly tied to T{sub g}. The characteristic of STZ size in metallic glassy thin films was discussed in terms of applied method and deformation modes.

Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-01-01

Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

Direct fabrication of rigid microstructures on a metallic roller using a dry film resist

International Nuclear Information System (INIS)

Jiang, Liang-Ting; Huang, Tzu-Chien; Chang, Chih-Yuan; Ciou, Jian-Ren; Yang, Sen-Yeu; Huang, Po-Hsun

2008-01-01

This paper presents a novel method to fabricate a metallic roller mold with microstructures on its surface using a dry film resist (DFR). The DFR is laminated uniformly onto the curvy surface of a copper roller. After that, the micro-scale photoresist on the surface of the roller can be patterned by non-planar lithography using a flexible film photomask, followed by ferric chloride wet etching to obtain the desired microstructures. This method overcomes the uniformity issue of photoresist coating on rollers, and solves the molds sliding problem during the embossing process because the microstructures are fabricated directly on the roller surface. Furthermore, the rigid metallic roller mold has excellent strength durability and temperature endurance, which can be used in roller hot embossing with a high embossing pressure. The fabricated microstructure roller mold is used as a mold in the hybrid extrusion roller embossing process and successfully fabricates uniform micro-scale prominent line arrays on PC films. This result proves that the roller fabricated by this method can be successfully used in roller embossing for microstructure mass production. The excellent flatness of dry film resist laminating is the key in this fabrication process. The flexible film photomask can be easily designed using CAD software; this roller fabrication method enhances the design flexibility and reduces the cost and time

Engineering Graphene Films from Coal

Science.gov (United States)

Vijapur, Santosh H.

Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

Solvent properties of hydrazine in the preparation of metal chalcogenide bulk materials and films.

Science.gov (United States)

Yuan, Min; Mitzi, David B

2009-08-21

A combination of unique solvent properties of hydrazine enables the direct dissolution of a range of metal chalcogenides at ambient temperature, rendering this an extraordinarily simple and soft synthetic approach to prepare new metal chalcogenide-based materials. The extended metal chalcogenide parent framework is broken up during this process, and the resulting metal chalcogenide building units are re-organized into network structures (from 0D to 3D) based upon their interactions with the hydrazine/hydrazinium moieties. This Perspective will review recent crystal and materials chemistry developments within this family of compounds and will briefly discuss the utility of this approach in metal chalcogenide thin-film deposition.

Superconducting properties of GdBa{sub 2}Cu{sub 3}O{sub y} films by metal-organic deposition using new fluorine-free complex solutions

Energy Technology Data Exchange (ETDEWEB)

Nakamura, T. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Johoku 3-5-1, Hamamatsu, Shizuoka 432-8561 (Japan); Kita, R. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, Johoku 3-5-1, Hamamatsu, Shizuoka 432-8561 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan)], E-mail: terkita@ipc.shizuoka.ac.jp; Miura, O. [Tokyo Metropolitan University, Minamiosawa 1-1, Hachioji, Tokyo 192-0364 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Ichinose, A. [CRIEPI, Nagasaka 2-6-1, Yokosuka, Kanagawa 240-0916 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Matsumoto, K. [Kyushu Institute of Techonology, Sensui-cho, Tobata-ku, Kitakyushu, Hukuoka 804-8550 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Yoshida, Y. [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Mukaida, M. [Kyushu University, Hakozaki 6-10-1, Higashi-ku 4-3-16, Fukuoka 992-8510 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan); Horii, S. [University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8586 (Japan); CREST-JST, Honcho 4-1-8, Kawaguchi, Saitama 332-0012 (Japan)

2008-09-15

GdBa{sub 2}Cu{sub 3}O{sub y} (GdBCO) films have been prepared on LaAlO{sub 3} single-crystal substrates by metal-organic deposition (MOD) using new fluorine-free complex solutions consisting of metal 2-ethylhexanates (2-EH) and metal naphthenates. The dispersion of T{sub c} values for GdBCO films improved by using a complex solution, rather than only a solution of metal naphthenates. c-axis oriented GdBCO films with flat surfaces were grown under lower calcining temperatures and higher firing temperatures than in the process using only metal naphthenates. The T{sub c} and J{sub c} of the GdBCO films were 91.2 K and 0.61 MA/cm{sup 2}, respectively, at 77 K at self-field.

Stripping scattering of fast atoms on surfaces of metal-oxide crystals and ultrathin films

International Nuclear Information System (INIS)

Blauth, David

2010-01-01

In the framework of the present dissertation the interactions of fast atoms with surfaces of bulk oxides, metals and thin films on metals were studied. The experiments were performed in the regime of grazing incidence of atoms with energies of some keV. The advantage of this scattering geometry is the high surface sensibility and thus the possibility to determine the crystallographic and electronic characteristics of the topmost surface layer. In addition to these experiments, the energy loss and the electron emission induced by scattered projectiles was investigated. The energy for electron emission and exciton excitation on Alumina/NiAl(110) and SiO 2 /Mo(112) are determined. By detection of the number of projectile induced emitted electrons as function of azimuthal angle for the rotation of the target surface, the geometrical structure of atoms forming the topmost layer of different adsorbate films on metal surfaces where determined via ion beam triangulation. (orig.)

Qualitative and quantitative analysis of an additive element in metal oxide nanometer film using laser induced breakdown spectroscopy.

Science.gov (United States)

Xiu, Junshan; Liu, Shiming; Sun, Meiling; Dong, Lili

2018-01-20

The photoelectric performance of metal ion-doped TiO 2 film will be improved with the changing of the compositions and concentrations of additive elements. In this work, the TiO 2 films doped with different Sn concentrations were obtained with the hydrothermal method. Qualitative and quantitative analysis of the Sn element in TiO 2 film was achieved with laser induced breakdown spectroscopy (LIBS) with the calibration curves plotted accordingly. The photoelectric characteristics of TiO 2 films doped with different Sn content were observed with UV visible absorption spectra and J-V curves. All results showed that Sn doping could improve the optical absorption to be red-shifted and advance the photoelectric properties of the TiO 2 films. We had obtained that when the concentration of Sn doping in TiO 2 films was 11.89  mmol/L, which was calculated by the LIBS calibration curves, the current density of the film was the largest, which indicated the best photoelectric performance. It indicated that LIBS was a potential and feasible measured method, which was applied to qualitative and quantitative analysis of the additive element in metal oxide nanometer film.

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

International Nuclear Information System (INIS)

Krumov, E.; Starbov, N.; Starbova, K.; Perea, A.; Solis, J.

2009-01-01

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO 2 ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO 2 films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO 2 based thin film catalysts is discussed.

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

Energy Technology Data Exchange (ETDEWEB)

Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

2009-11-15

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

Analytical model of the optical response of periodically structured metallic films.

Science.gov (United States)

Benabbas, A; Halté, V; Bigot, J-Y

2005-10-31

In this paper we investigate the optical response of periodically structured metallic films constituted of sub-wavelength apertures. Our approach consists in studying the diffraction of transverse magnetic polarized electromagnetic waves by a one-dimensional grating. The method that we use is the Rigorous Coupled Waves Analysis allowing us to obtain an analytical model to calculate the diffraction efficiencies. The zero and first order terms allow determining the transmission, reflectivity and absorption of symmetric or asymmetric nanostructures surrounded either by identical or different dielectric media. For both type of nanostructures the spectral shape of the enhanced resonant transmission associated to surface plasmons displays a Fano profile. In the case of symmetric nanostructures, we study the conditions of formation of coupled surface plasmon-polaritons as well as their effect on the optical response of the modulated structure. For asymmetric nanostructures, we discuss the non-reciprocity of the reflectivity and we investigate the spectral dependency of the enhanced resonant transmission on the refractive index of the dielectric surrounding the metal film.

Greatly enhanced flux pinning properties of fluorine-free metal-organic decomposition YBCO films by co-addition of halogens (Cl, Br) and metals (Zr, Sn, Hf)

Science.gov (United States)

Motoki, Takanori; Ikeda, Shuhei; Nakamura, Shin-ichi; Honda, Genki; Nagaishi, Tatsuoki; Doi, Toshiya; Shimoyama, Jun-ichi

2018-04-01

Additive-free YBCO films, as well as those with halogen (X) added, metal (M) added and (X, M) co-added, have been prepared by the fluorine-free metal-organic decomposition method on SrTiO3(100) single crystalline substrates, where X = Cl, Br and M = Zr, Sn, Hf. It was revealed that the addition of both Cl and Br to the starting solution resulted in the generation of oxyhalide, Ba2Cu3O4 X 2, in the YBCO films, and that the oxyhalide was found to promote the bi-axial orientation of the YBCO crystals. By adding a decent amount of Cl or Br, highly textured YBCO films with high J c were reproducibly obtained, even when an impurity metal, M, was co-added, while the addition of M without X did not greatly improve J c owing to the poor bi-axial orientation of the YBCO crystals. Our results suggest that the addition of Br more effectively enhances J c than the addition of Cl. The pinning force density at 40 K in 4.8 T reached ˜55 GN m-3 with the co-addition of (Br, M). This value is much larger than that of the pure YBCO film, reaching ˜17 GN m-3.

Highly Conductive, Transparent Flexible Films Based on Metal Nanoparticle-Carbon Nanotube Composites

Directory of Open Access Journals (Sweden)

Wen-Yin Ko

2013-01-01

Full Text Available Metallic nanoparticles decorated on MWCNTs based transparent conducting thin films (TCFs show a cheap and efficient option for the applications in touch screens and the replacement of the ITO film because of their interesting properties of electrical conductivity, mechanical property, chemical inertness, and other unique properties, which may not be accessible by their individual components. However, a great challenge that always remains is to develop effective ways to prepare junctions between metallic nanoparticles and MWCNTs for the improvement of high-energy barriers, high contact resistances, and weak interactions which could lead to the formation of poor conducting pathways and result in the CNT-based devices with low mechanical flexibility. Herein, we not only discuss recent progress in the preparation of MNP-CNT flexible TCFs but also describe our research studies in the relevant areas. Our result demonstrated that the MNP-CNT flexible TCFs we prepared could achieve a highly electrical conductivity with the sheet resistance of ~100 ohm/sq with ~80% transmittance at 550 nm even after being bent 500 times. This electrical conductivity is much superior to the performances of other MWCNT-based transparent flexible films, making it favorable for next-generation flexible touch screens and optoelectronic devices.

Influence of thin film nickel pretreatment on catalytic thermal chemical vapor deposition of carbon nanofibers

Energy Technology Data Exchange (ETDEWEB)

Tiggelaar, R.M. [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Thakur, D.B.; Nair, H.; Lefferts, L.; Seshan, K. [Catalytic Processes and Materials, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Gardeniers, J.G.E., E-mail: j.g.e.gardeniers@utwente.nl [Mesoscale Chemical Systems, MESA" + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2013-05-01

Nickel and other metal nanoparticles are known to be active as catalysts in the synthesis of carbon nanofibers. In this paper we investigate how dewetting and break-up of nickel thin films depends on film thickness, film–substrate interaction and pretreatment conditions. This is evaluated for films evaporated on oxidized silicon and fused silica substrates with or without tantalum coating, which were subsequently exposed to different pretreatment atmospheres (vacuum, nitrogen, air and hydrogen; 1 h, 650 °C). Atomic force microscopy, scanning electron microscopy and energy dispersive X-ray analysis were used to characterize the films. Pretreated Ni films were subjected to a thermal catalytic chemical vapor deposition procedure with brief ethylene exposures (0.5–3 min, 635 °C). It was found that only on the spherical nanoparticles originating from a hydrogen pretreatment of a Ni film with Ta adhesion layer, homogeneously distributed, randomly-oriented, well-attached, and semi-crystalline carbon nanofibers be synthesized. - Highlights: • On the formation of nanoparticles required for carbon nanofiber (CNF) synthesis • Various evaporated thin films on oxidized silicon and fused silica: Ni and Ni/Ta • Pretreatment of nickel-based thin films in vacuum, nitrogen, air and hydrogen • Only on reduced Ni/Ta fast – within 3 min – initiation of CNF nucleation and growth.

Antimicrobial and anti-biofilm properties of polypropylene meshes coated with metal-containing DLC thin films.

Science.gov (United States)

Cazalini, Elisa M; Miyakawa, Walter; Teodoro, Guilherme R; Sobrinho, Argemiro S S; Matieli, José E; Massi, Marcos; Koga-Ito, Cristiane Y

2017-06-01

A promising strategy to reduce nosocomial infections related to prosthetic meshes is the prevention of microbial colonization. To this aim, prosthetic meshes coated with antimicrobial thin films are proposed. Commercial polypropylene meshes were coated with metal-containing diamond-like carbon (Me-DLC) thin films by the magnetron sputtering technique. Several dissimilar metals (silver, cobalt, indium, tungsten, tin, aluminum, chromium, zinc, manganese, tantalum, and titanium) were tested and compositional analyses of each Me-DLC were performed by Rutherford backscattering spectrometry. Antimicrobial activities of the films against five microbial species (Candida albicans, Escherichia coli, Pseudomonas aeruginosa, Staphylococcus aureus, and Enterococcus faecalis) were also investigated by a modified Kirby-Bauer test. Results showed that films containing silver and cobalt have inhibited the growth of all microbial species. Tungsten-DLC, tin-DLC, aluminum-DLC, zinc-DLC, manganese-DLC, and tantalum-DLC inhibited the growth of some strains, while chromium- and titanium-DLC weakly inhibited the growth of only one tested strain. In-DLC film showed no antimicrobial activity. The effects of tungsten-DLC and cobalt-DLC on Pseudomonas aeruginosa biofilm formation were also assessed. Tungsten-DLC was able to significantly reduce biofilm formation. Overall, the experimental results in the present study have shown new approaches to coating polymeric biomaterials aiming antimicrobial effect.

Numerical analysis of short-pulse laser interactions with thin metal film

Directory of Open Access Journals (Sweden)

E. Majchrzak

2010-10-01

Full Text Available Thin metal film subjected to a short-pulse laser heating is considered. The hyperbolic two-temperature model describing the temporal andspatial evolution of the lattice and electrons temperatures is discussed. At the stage of numerical computations the finite difference method is used. In the final part of the paper the examples of computations are shown.

Spectral light separator based on deep-subwavelength resonant apertures in a metallic film

Energy Technology Data Exchange (ETDEWEB)

Büyükalp, Yasin; Catrysse, Peter B., E-mail: pcatryss@stanford.edu; Shin, Wonseok; Fan, Shanhui, E-mail: shanhui@stanford.edu [E. L. Ginzton Laboratory and Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2014-07-07

We propose to funnel, select, and collect light spectrally by exploiting the unique properties of deep-subwavelength resonant apertures in a metallic film. In our approach, each aperture has an electromagnetic cross section that is much larger than its physical size while the frequency of the collected light is controlled by its height through the Fabry-Pérot resonance mechanism. The electromagnetic crosstalk between apertures remains low despite physical separations in the deep-subwavelength range. The resulting device enables an extremely efficient, subwavelength way to decompose light into its spectral components without the loss of photons and spatial coregistration errors. As a specific example, we show a subwavelength-size structure with three deep-subwavelength slits in a metallic film designed to operate in the mid-wave infrared range between 3 and 5.5 μm.

Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

Science.gov (United States)

Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

2017-03-01

The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

A novel synthesis method for large area metallic amorphous/nanocrystal films by the glow-discharge plasma technique

International Nuclear Information System (INIS)

Xu Jiang; Xu Zhong; Tao Jie; Liu Zili; Chen Zheyuan; Zhu Wenhui

2007-01-01

Two large-area metallic amorphous/nanocrystal films were prepared on AZ31 magnesium alloy and pure iron substrates by the double glow-discharge plasma technique. The formation mechanism of the novel amorphous films did not follow the established empirical rules for large glass-forming ability. The amorphous films were composed of binary alloys with a difference in the atomic diameter of alloying constituents of less than 12%, and an amorphous film of pure iron was successfully obtained

Site-selective electroless nickel plating on patterned thin films of macromolecular metal complexes.

Science.gov (United States)

Kimura, Mutsumi; Yamagiwa, Hiroki; Asakawa, Daisuke; Noguchi, Makoto; Kurashina, Tadashi; Fukawa, Tadashi; Shirai, Hirofusa

2010-12-01

We demonstrate a simple route to depositing nickel layer patterns using photocross-linked polymer thin films containing palladium catalysts, which can be used as adhesive interlayers for fabrication of nickel patterns on glass and plastic substrates. Electroless nickel patterns can be obtained in three steps: (i) the pattern formation of partially quaterized poly(vinyl pyridine) by UV irradiation, (ii) the formation of macromolecular metal complex with palladium, and (iii) the nickel metallization using electroless plating bath. Metallization is site-selective and allows for a high resolution. And the resulting nickel layered structure shows good adhesion with glass and plastic substrates. The direct patterning of metallic layers onto insulating substrates indicates a great potential for fabricating micro/nano devices.

Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

Energy Technology Data Exchange (ETDEWEB)

Gruber, Patric Alfons

2007-07-20

A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

Surface structure of ultrathin metal films deposited on copper single crystals

International Nuclear Information System (INIS)

Butterfield, M.T.

2000-04-01

Ultrathin films of Cobalt, Iron and Manganese have been thermally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural techniques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fcc Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer by layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect overlayer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fcc Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300 deg. C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30 deg. (√3 x √3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction. (author)

Improving light harvesting in polymer photodetector devices through nanoindented metal mask films

NARCIS (Netherlands)

Macedo, A. G.; Zanetti, F.; Mikowski, A.; Hummelen, J. C.; Lepienski, C. M.; da Luz, M. G. E.; Roman, L. S.

2008-01-01

To enhance light harvesting in organic photovoltaic devices, we propose the incorporation of a metal (aluminum) mask film in the system's usual layout. We fabricate devices in a sandwich geometry, where the mask (nanoindented with a periodic array of holes of sizes d and spacing s) is added between

Effects of a metallic front gate on the temperature-dependent electronic property of pentacene films

Energy Technology Data Exchange (ETDEWEB)

Lin, Yow-Jon, E-mail: rzr2390@yahoo.com.tw [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Tsao, Hou-Yen [Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China); Liu, Day-Shan [Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 632, Taiwan (China)

2014-11-14

The effect of a metallic front gate on the temperature-dependent electronic property of pentacene films was investigated in this study. The carrier mobility exhibits strong temperature dependence, implying the dominance of tunneling (hopping) at low (high) temperatures. The room-temperature mobility was drastically increased by capping an In (Au) layer on the pentacene front surface. However, the carrier concentration is not affected. An increase in the phonon energy occurs for In-capped or Au-capped pentacene samples, which corresponds to the abrupt transition to the nonlocal electron–phonon coupling. The enhanced mobility by capping a metal layer is attributed to a change in the electron–phonon coupling. - Highlights: • For the metal-capped and uncapped pentacene films, the mobility was researched. • The mobility was dramatically increased by capping an In (Au) layer. • The induced strain by capping a metal layer is found. • The strain may lead to the electron–phonon coupling variation. • The enhanced mobility is attributed to the weakened electron–phonon coupling.

Magnetic-property changes in epitaxial metal-film sandwiches

International Nuclear Information System (INIS)

Brodsky, M.B.

1982-08-01

Epitaxial metal-film sandwiches (EMFS) containing Pd or Cr, have been prepared between single-crystal Ag or Au. The modified Pd/Cr show major changes in physical properties. Pd has a stretched lattice parameter in Au-Pd-Au, which combines with a tetragonal distortion to cause exchange enhancements up to 28,000 and spin-fluctuation temperatures of 1 to 10 K. In Au-Cr-Au, Cr takes up the fcc structure, leading to superconductivity due to a high N(E/sub F/). These results are contrasted to data for Ag-Pd-Ag and Ag-Cr-Ag EMFS

Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

Directory of Open Access Journals (Sweden)

Maryam Siadat

2009-11-01

Full Text Available Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2, tungsten oxide (WO3 and indium oxide (In2O3 were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD. The morphology studied with scanning electron microscopy (SEM and atomic force microscopy (AFM shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm at low operating temperatures (100 and 200 °C and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500 followed by WO3 (1200 and In2O3 (75. Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2 or oxidizing (NO2 gases.

Modeling of Melting and Resolidification in Domain of Metal Film Subjected to a Laser Pulse

Directory of Open Access Journals (Sweden)

Majchrzak E.

2016-03-01

Full Text Available Thermal processes in domain of thin metal film subjected to a strong laser pulse are discussed. The heating of domain considered causes the melting and next (after the end of beam impact the resolidification of metal superficial layer. The laser action (a time dependent bell-type function is taken into account by the introduction of internal heat source in the energy equation describing the heat transfer in domain of metal film. Taking into account the extremely short duration, extreme temperature gradients and very small geometrical dimensions of the domain considered, the mathematical model of the process is based on the dual phase lag equation supplemented by the suitable boundary-initial conditions. To model the phase transitions the artificial mushy zone is introduced. At the stage of numerical modeling the Control Volume Method is used. The examples of computations are also presented.

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

International Nuclear Information System (INIS)

Shen Liru; Fu, Ricky K.Y.; Chu, Paul K.

2004-01-01

Aluminum nitride (AlN) is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 deg. C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas

All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

Energy Technology Data Exchange (ETDEWEB)

Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

2014-01-21

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

Formation of biaxial texture in metal films by selective ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

2006-05-15

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

Formation of biaxial texture in metal films by selective ion beam etching

International Nuclear Information System (INIS)

Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

2006-01-01

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

Energy Technology Data Exchange (ETDEWEB)

Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

2013-10-01

Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

International Nuclear Information System (INIS)

Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R.; Arrieta, M.L. Pérez; Meza-Rocha, A.N.; Rivera-Álvarez, Z.; Falcony, C.

2013-01-01

Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min −1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min −1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

Mechanical properties of metal-organic frameworks: An indentation study on epitaxial thin films

Science.gov (United States)

Bundschuh, S.; Kraft, O.; Arslan, H. K.; Gliemann, H.; Weidler, P. G.; Wöll, C.

2012-09-01

We have determined the hardness and Young's modulus of a highly porous metal-organic framework (MOF) using a standard nanoindentation technique. Despite the very low density of these films, 1.22 g cm-3, Young's modulus reaches values of almost 10 GPa for HKUST-1, demonstrating that this porous coordination polymer is substantially stiffer than normal polymers. This progress in characterizing mechanical properties of MOFs has been made possible by the use of high quality, oriented thin films grown using liquid phase epitaxy on modified Au substrates.

Optimization of film synthesized rare earth transition metal permanent magnet systems

International Nuclear Information System (INIS)

Cadieu, F.J.

1992-01-01

Progress is reported in three areas: high coercivity Sm-Fe-Ti-V, Sm-Fe-Zr, and two element Sm-Fe Sm 5 (Fe,T) 17 type crystalline phases; ThMn 12 type pseudobinary SmFe 12-x T x (0≤x≤1.5); and sputter process control for the synthesis of precisely textured rare earth-transition metal magnetic films

Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

DEFF Research Database (Denmark)

Huhtinen, H.; Irjala, M.; Paturi, P.

2010-01-01

The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

Magnetic properties of thin films obtained by ion implantation of 3d metals in polyethylene-terephthalate

International Nuclear Information System (INIS)

Petukhov, V.Yu.; Ibragimova, M.I.; Khabibullina, N.R; Zheglov, E.P.; Muller, R.

2002-01-01

Polymer films containing small metal particles have been attracting particular interest because of their unique properties. Implantation of metal ions in polymers is one of the methods to synthesize metal-polymer nano-composite materials. Ion implantation makes possible the magnetic nano-structures with controlled parameters. Previously, we showed that 3d-metal implantation into numerous polymers (polymethylmethacrylate, phosphorus containing polymethylmethacrylate) resulted in the formation of a composite film consisting of metal nanoparticles buried in an implanted layer. The particles are usually found to be distributed randomly in the surface layer. It has been established that structural peculiarities, phase composition, and magnetic properties of synthesized metal-polymer systems depend on the type of the initial polymer matrix, ion types, as well as conditions of ion implantation. In the present study we have been prepared thin metal-polymer composite films by ion-beam implantation of Fe + and Co + ions in polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2·10 1 6 to 3·10 17 cm -2 have been performed, with the ion current density not exceeding 10 μA/cm 2 . The magnetic properties have been investigated both by ferromagnetic resonance (FMR) and vibrating sample magnetometry (VSM). FMR spectra were recorded using magnetic radio spectrometer Varian E-12 with frequency of 9.5 GHz at room temperature. The dependencies of FMR spectra on orientation have been measured for all samples. Measurements were carried out for two orientations of the sample, normal direction of the films being either parallel or perpendicular to dc magnetic field. The values of the effective magnetization were calculated from orientation dependencies. Thin ferromagnetic films (TFF) have been shown to form for samples with both implanted ions. For samples implanted with Co + ions, the appearance of FMR lines occurs at doses markedly greater

The resistance changes of carbon and metal oxide film resistors by irradiation of 60Co γ rays

International Nuclear Information System (INIS)

Okamoto, Shinichi; Fujino, Takahiro; Furuta, Junichiro; Yoshida, Toshio

1979-01-01

The resistance changes of glass-sealed deposited-carbon-film and carbon-coated-film resitors and metal oxide glazed resistors made in USA were studied by gamma-ray irradiation. (1) The resistances of deposited-carbon-film resistors of 50, 100 and 200 megohm did not change by irradiation of gamma rays up to 1.9 x 10 9 R. (2) The carbon-coated-film resistors of 100, 1000, 10000 and 100000 megohm had negative resistance changes by irradiation of gamma rays up to 9.9 x 10 8 R. (3) The resistances of metal oxide glazed resistors of 100, 1000 and 10000 megohm did not change by irradiation of gamma rays up to 8.8 x 10 8 R. When radiation monitoring instruments with hi-meg resistors are used in a gamma field with high intensity, the resistors must not be exposed to gamma rays with high doses, or the resistors which do not change by gamma-ray irradiation must be selected. (author)

Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

Science.gov (United States)

Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

2016-01-08

We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

Science.gov (United States)

Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

2014-09-01

In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

International Nuclear Information System (INIS)

Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

2003-01-01

We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

Comparative study of Cu-Zr and Cu-Ru alloy films for barrier-free Cu metallization

International Nuclear Information System (INIS)

Wang Ying; Cao Fei; Zhang Milin; Liu Yuntao

2011-01-01

The properties of Cu-Zr and Cu-Ru alloy films were comparatively studied to evaluate their potential use as alloying elements. Cu alloy films were deposited on SiO 2 /Si substrates by magnetron sputtering. Samples were subsequently annealed and analyzed by four-point probe measurement, X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy and Auger electron spectroscopy. X-ray diffraction data suggest that Cu film has preferential (111) crystal orientation and no extra peak corresponding to any compound of Cu, Zr, Ru, and Si. According to transmission electron microscopy results, Cu grains grow in size for both systems but the grain sizes of the Cu alloy films are smaller than that of pure Cu films. These results indicate that Cu-Zr film is suitable for advanced barrier-free metallization in terms of interfacial stability and lower resistivity.

Microchip power compensated calorimetry applied to metal hydride characterization

Energy Technology Data Exchange (ETDEWEB)

Sepulveda, A.; Lopeandia, A.F.; Domenech-Ferrer, R.; Garcia, G.; Pi, F.; Rodriguez-Viejo, J. [Nanomaterials and Microsystems Group, Physics Department, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Munoz, F.J. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica, Campus UAB, 08193 Bellaterra (Spain)

2008-06-15

In this work, we show the suitability of the thin film membrane-based calorimetric technique to measure kinetically limited phase transitions such as the dehydrogenation of metallic hydrides. Different compounds such as Mg, Mg/Al and Mg{sub 80}Ti{sub 20} have been deposited over the active area of the microchip by electron beam evaporation. After several hydrogenation treatments at different temperatures to induce the hydride formation, calorimetric measurements on the dehydrogenation process of those thin films, either in vacuum or in air, are performed at a heating rate of 10 C/min. We observe a significant reduction in the onset of dehydrogenation for Mg{sub 80}Ti{sub 20} compared with pure Mg or Mg/Al layers, which confirms the beneficial effect of Ti on dehydrogenation. We also show the suitability of the membrane-based nanocalorimeters to be used in parallel with optical methods. Quantification of the energy released during hydrogen desorption remains elusive due to the semi-insulating to metallic transition of the film which affects the calorimetric trace. (author)

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

Science.gov (United States)

Chang, R. C.; Li, T. C.; Lin, C. W.

2012-02-01

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

International Nuclear Information System (INIS)

Ikeda, Ai; Manabe, Takaaki; Naito, Michio

2013-01-01

Highlights: •LaNiO 2 films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO 2 . •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO 2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO 2 is isostructural to SrCuO 2 , the parent compound of high-T c Sr 0.9 La 0.1 CuO 2 with T c = 44 K, and has 3d 9 configuration, which is very rare in oxides but common to high-T c copper oxides. The bulk synthesis of LaNiO 2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO 2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO 2 . The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures

Simultaneous Formation of Artificial SEI Film and 3D Host for Stable Metallic Sodium Anodes.

Science.gov (United States)

Zhang, Di; Li, Bin; Wang, Shuai; Yang, Shubin

2017-11-22

Metallic sodium is a promising anode for sodium-based batteries, owing to its high theoretical capacity (1165 mAh g -1 ) and low potential (-2.714 V vs standard hydrogen electrode). However, the growth of sodium dendrites and the infinite volume change of metallic sodium during sodium striping/plating result in a low Coulombic efficiency and poor cycling stability, generating a safety hazard of sodium-based batteries. Here, an efficient approach was proposed to simultaneously generate an artificial SEI film and 3D host for metallic sodium based on a conversion reaction (CR) between sodium and MoS 2 (4Na + MoS 2 = 2Na 2 S + Mo) at room temperature. In the resultant sodium-MoS 2 hybrid after the conversion reaction (Na-MoS 2 (CR)), the production Na 2 S is homogeneously dispersed on the surface of metallic sodium, which can act as an artificial SEI film, efficiently preventing the growth of sodium dendrites; the residual MoS 2 nanosheets can construct a 3D host to confine metallic sodium, accommodating largely the volume change of sodium. Consequently, the Na-MoS 2 (CR) hybrid exhibits very low overpotential of 25 mV and a very long cycle stability more than 1000 cycles. This novel strategy is promising to promote the development of metal (lithium, sodium, zinc)-based electrodes.

Metal-on-metal hip joint tribology.

Science.gov (United States)

Dowson, D; Jin, Z M

2006-02-01

The basic tribological features of metal-on-metal total hip replacements have been reviewed to facilitate an understanding of the engineering science underpinning the renaissance of these hard-on-hard joints. Metal-on-polymer hip replacements operate in the boundary lubrication regime, thus leading to the design guidance to reduce the femoral head diameter as much as is feasible to minimize frictional torque and volumetric wear. This explains why the gold-standard implant of this form from the past half-century had a diameter of only 22.225 mm (7/8 in). Metal-on-metal implants can operate in the mild mixed lubrication regime in which much of the applied load is supported by elastohydrodynamic films. Correct tribological design leads to remarkably low steady state wear rates. Promotion of the most effective elastohydrodynamic films calls for the largest possible head diameters and the smallest clearances that can reasonably be adopted, consistent with fine surface finishes, good sphericity and minimal structural elastic deformation of the cup on its foundations. This guidance, which is opposite in form to that developed for metal-on-polymer joints, is equally valid for solid (monolithic) metallic heads on metallic femoral stems and surface replacement femoral shells. Laboratory measurements of friction and wear in metal-on-metal joints have confirmed their potential to achieve a very mild form of mixed lubrication. The key lies in the generation of effective elastohydrodynamic lubricating films of adequate thickness compared with the composite roughness of the head and cup. The calculation of the film thickness is by no means easy, but the full procedure is outlined and the use of an empirical formula that displays good agreement with calculations based upon the full numerical solutions is explained. The representation of the lambda ratio, lambda, embracing both film thickness and composite roughness, is described.

Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

International Nuclear Information System (INIS)

Nazarpour, S.; Langenberg, E.; Jambois, O.; Ferrater, C.; Garcia-Cuenca, M.V.; Polo, M.C.; Varela, M.

2009-01-01

Electrical conductivity dependence of thin metallic films of Au and Pd over the different perovskites was investigated. It is found from electrical properties that crystallographic growth orientation of Au and Pd thin layers attained from X-ray diffraction results indicate the slop of current (I)-voltage (V) plots. Besides, surface morphology and topography was considered using Field Emission Scanning Electron Microscopy and Atomic Force Microscopy, respectively. Obtained results showed the Stranski-Krastanov growth of the Pd and Au. Indeed, diminishing of the root-mean-square roughness of Pd/BiMnO 3 /SrTiO 3 following by Au deposition should be concerned due to growth of Au onto the crack-like parts of the substrate. These crack-like parts appeared due to parasitic phases of the Bi-Mn-O system mainly Mn 3 O 4 (l 0 l) and Mn 3 O 4 (0 0 4 l). The different response in the electrical properties of heterostructures suggests that electrical conductance of the Au and Pd thin metallic films have the crystallographic orientation dependence. Furthermore, polycrystallinity of the thin metallic films are desired in electrode applications due to increase the conductivity of the metallic layers.

A nanohole in a thin metal film as an efficient nonlinear optical element

International Nuclear Information System (INIS)

Konstantinova, T. V.; Melent’ev, P. N.; Afanas’ev, A. E.; Kuzin, A. A.; Starikov, P. A.; Baturin, A. S.; Tausenev, A. V.; Konyashchenko, A. V.; Balykin, V. I.

2013-01-01

The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10 13 W/cm 2

Metal (Ag/Ti)-Containing Hydrogenated Amorphous Carbon Nanocomposite Films with Enhanced Nanoscratch Resistance: Hybrid PECVD/PVD System and Microstructural Characteristics.

Science.gov (United States)

Constantinou, Marios; Nikolaou, Petros; Koutsokeras, Loukas; Avgeropoulos, Apostolos; Moschovas, Dimitrios; Varotsis, Constantinos; Patsalas, Panos; Kelires, Pantelis; Constantinides, Georgios

2018-03-30

This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a-C:H:Me) of controlled size and concentration. Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD) and Physical Vapor Deposition (PVD) technologies. The a-C:H matrix was deposited through the acceleration of carbon ions generated through a radio-frequency (RF) plasma source by cracking methane, whereas metallic nanoparticles were generated and deposited using terminated gas condensation (TGC) technology. The resulting material was a hydrogenated amorphous carbon film with controlled physical properties and evenly dispersed metallic nanoparticles (here Ag or Ti). The physical, chemical, morphological and mechanical characteristics of the films were investigated through X-ray reflectivity (XRR), Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) and nanoscratch testing. The resulting amorphous carbon metal nanocomposite films (a-C:H:Ag and a-C:H:Ti) exhibited enhanced nanoscratch resistance (up to +50%) and low values of friction coefficient (<0.05), properties desirable for protective coatings and/or solid lubricant applications. The ability to form nanocomposite structures with tunable coating performance by potentially controlling the carbon bonding, hydrogen content, and the type/size/percent of metallic nanoparticles opens new avenues for a broad range of applications in which mechanical, physical, biological and/or combinatorial properties are required.

Initial liquid metal magnetohydrodynamic thin film flow experiments in the MeGA-loop facility at UCLA

International Nuclear Information System (INIS)

Morley, N.B.; Gaizer, A.A.; Tillack, M.S.; Abdou, M.A.

1995-01-01

Free surface thin film flows of liquid metal were investigated experimentally in the presence of a coplanar magnetic field. This investigation was performed in a new magnetohydrodynamic (MHD) flow facility, the MeGA-loop, utilizing a low melting temperature lead-bismuth alloy as the working metal. Owing to the relatively low magnetic field produced by the present field coil system, the ordinary hydrodynamic and low MHD interaction regimes only were investigated. At the high flow speeds necessary for self cooling, the importance of a well designed and constructed channel becomes obvious. Partial MHD drag, increasing the film height, is observed as Haβ 2 becomes greater than unity. MHD laminarization of the turbulent film flows is observed when Haβ/Re>0.002, but fully laminar flow was not reached. Suggestions for facility upgrades to achieve greater MHD interaction are presented in the context of these initial results. (orig.)

InAs film grown on Si(111) by metal organic vapor phase epitaxy

International Nuclear Information System (INIS)

Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

2008-01-01

We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

Estimation of dose enhancement to soft tissue due to backscatter radiation near metal interfaces during head and neck radiothearpy - A phantom dosimetric study with radiochromic film

Directory of Open Access Journals (Sweden)

Rajesh Ashok Kinhikar

2014-01-01

Full Text Available The objective of this study was to investigate the dose enhancement to soft tissue due to backscatter radiation near metal interfaces during head and neck radiotherapy. The influence of titanium-mandibular plate with the screws on radiation dose was tested on four real bones from mandible with the metal and screws fixed. Radiochromic films were used for dosimetry. The bone and metal were inserted through the film at the center symmetrically. This was then placed in a small jig (7 cm × 7 cm × 10 cm to hold the film vertically straight. The polymer granules (tissue-equivalent were placed around the film for homogeneous scatter medium. The film was irradiated with 6 MV X-rays for 200 monitor units in Trilogy linear accelerator for 10 cm × 10 cm field size with source to axis distance of 100 cm at 5 cm. A single film was also irradiated without any bone and metal interface for reference data. The absolute dose and the vertical dose profile were measured from the film. There was 10% dose enhancement due to the backscatter radiation just adjacent to the metal-bone interface for all the materials. The extent of the backscatter effect was up to 4 mm. There is significant higher dose enhancement in the soft tissue/skin due to the backscatter radiation from the metallic components in the treatment region.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Axisymmetric modeling of ultrashort-pulse laser interactions with thin metal film

Directory of Open Access Journals (Sweden)

E. Majchrzak

2011-10-01

Full Text Available The hyperbolic two-temperature model is used in order to describe the heat propagation in metal film subjected to an ultrashort-pulse laser heating. An axisymmetric heat soureceewith Gaussian temporeal and spatial distributions has been taken into account. At the stage of numerical computations the finite difference method is used. In the final part of the paper the examples of computations are shown.

Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films

Science.gov (United States)

Khlebnikov, Nikolai; Polyakov, Evgenii; Borisov, Sergei; Barashev, Nikolai; Biramov, Emir; Maltceva, Anastasia; Vereshchagin, Artem; Khartov, Stas; Voronin, Anton

2016-01-01

In this article, the principle and examples composite materials obtained by deposition of metal compound coatings on polymer film substrates by the ion-plasma sputtering method are presented. A synergistic effect is to obtain the materials with structural properties of the polymer substrate and the surface properties of the metal deposited coatings. The technology of sputtering of TiN coatings of various thicknesses on polyethylene terephthalate films is discussed. The obtained composites are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and scanning tunneling microscopy (STM) is shown. The examples of application of this method, such as receiving nanocomposite track membranes and flexible transparent electrodes, are considered.

Demonstration of surface plasmons in metal island films and the effect of the surrounding medium--An undergraduate experiment

Energy Technology Data Exchange (ETDEWEB)

Orfanides, P. [Department of Physics, The University of Memphis, Memphis, Tennessee 38152 (United States); Buckner, T. F. [Department of Physics, The University of Memphis, Memphis, Tennessee 38152 (United States); Buncick, M. C. [Department of Physics, The University of Memphis, Memphis, Tennessee 38152 (United States); Meriaudeau, F. [LE21, 12 rue de la fonderie, 71200 Le Creusot, (France); Ferrell, T. L. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2000-10-01

We present a demonstration of the surface plasmon phenomenon as it occurs in thin metal island films. The metal films are deposited on glass microscope slides. The effect of the surface plasmon resonance may be observed visually on the slide without further apparatus. Heating the film changes the shape of the islands and therefore the resonant frequency of the surface plasmon and changes the color of the film. Placing the film in a dielectric medium changes the resonance condition for the surface plasmon again and changes the color again. We show this by coating the slides with commercially available liquids with different indices of refraction. We present a theoretical model that assumes the islands are oblate spheroids. There are enough details given so that the equations can be programed and the theoretical optical absorbance can be reproduced. We also present a modification to the theory so that the shift in resonant frequency can be calculated when the spheroids are immersed in the index fluids. We describe our apparatus for making thin films and our optical spectrometer system. We then present optical absorbance measurements of thin films of both Ag and Au in air and in two liquids with different indices of refraction. (c) 2000 American Association of Physics Teachers.

Influence of powerful pulses of laser irradiation on metallic films

International Nuclear Information System (INIS)

Besogonov, V.V.; Chudinov, V.G.

1999-01-01

The relaxation process of energy transferred by powerful pulses of laser irradiation to a superficial layer in metallic films has been investigated by the molecular dynamics technique. Beam energy transformation into mechanical energy of movement of irradiated atoms is shown to be possible due to changing pair interaction potentials. Variation of the Coulomb interaction screening of an ionic subsystem through the excitation of valence electrons is illustrated as major of the reasons for changing the potentials

Reflectance study on the metal-insulator transition driven by crystallinity change in poly(3,4-ethylenedioxy thiophene)/poly(styrenesulfonate) films

International Nuclear Information System (INIS)

Cho, Shinuk; Park, Sungheum; Lee, Kwanghee

2005-01-01

We report optical reflectance, R(ω), studies on free-standing films of poly(3,4-ethylene dioxy thiophene)/poly(style ne sulfonate) (PEDOT-PSS) measured over a range from 0.02 - 5.0 eV. When the PEDOT-PSS films were prepared at an elevated temperature of 60 .deg. C, the films exhibit an increased dc-conductivity (σ dc ∼ 104 S/cm) and an optical conductivity, σ(ω), in the intraband transitions below 1.0 eV as compared with the films prepared at room temperature (σ dc ∼ 47 S/cm). Detailed analysis of σ(ω) in terms of the 'localization-modified Drude (LMD) model' demonstrated that the heat-treated PEDOT-PSS was a disordered metal near the metal-insulator transition (MIT) while the as-grown films could be better described as a Fermi glass on the insulating side of MIT. The heat-annealing process increased the degree of crystallinity of the films, thereby inducing a MIT near the critical limit.

Local, atomic-level elastic strain measurements of metallic glass thin films by electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Ebner, C. [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria); Sarkar, R. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rajagopalan, J. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Department of Mechanical and Aerospace Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rentenberger, C., E-mail: christian.rentenberger@univie.ac.at [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria)

2016-06-15

A novel technique is used to measure the atomic-level elastic strain tensor of amorphous materials by tracking geometric changes of the first diffuse ring of selected area electron diffraction patterns (SAD). An automatic procedure, which includes locating the centre and fitting an ellipse to the diffuse ring with sub-pixel precision is developed for extracting the 2-dimensional strain tensor from the SAD patterns. Using this technique, atomic-level principal strains from micrometre-sized regions of freestanding amorphous Ti{sub 0.45}Al{sub 0.55} thin films were measured during in-situ TEM tensile deformation. The thin films were deformed using MEMS based testing stages that allow simultaneous measurement of the macroscopic stress and strain. The calculated atomic-level principal strains show a linear dependence on the applied stress, and good correspondence with the measured macroscopic strains. The calculated Poisson’s ratio of 0.23 is reasonable for brittle metallic glasses. The technique yields a strain accuracy of about 1×10{sup −4} and shows the potential to obtain localized strain profiles/maps of amorphous thin film samples. - Highlights: • A TEM method to measure elastic strain in metallic glass films is proposed. • Method is based on tracking geometric changes in TEM diffraction patterns. • An automatic procedure is developed for extracting the local strain tensor. • Atomic-level strain in amorphous TiAl film was analysed during in-situ deformation. • Capability of the method to obtain micrometer scale strain profiles/maps is shown.

Metallic nanomesh

Energy Technology Data Exchange (ETDEWEB)

Ren, Zhifeng; Sun, Tianyi; Guo, Chuanfei

2018-02-20

A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300.OMEGA./.quadrature. when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.

A highly efficient surface plasmon polaritons excitation achieved with a metal-coupled metal-insulator-metal waveguide

Directory of Open Access Journals (Sweden)

Hongyan Yang

2014-12-01

Full Text Available We propose a novel metal-coupled metal-insulator-metal (MC-MIM waveguide which can achieve a highly efficient surface plasmon polaritons (SPPs excitation. The MC-MIM waveguide is formed by inserting a thin metal film in the insulator of an MIM. The introduction of the metal film, functioning as an SPPs coupler, provides a space for the interaction between SPPs and a confined electromagnetic field of the intermediate metal surface, which makes energy change and phase transfer in the metal-dielectric interface, due to the joint action of incomplete electrostatic shielding effect and SPPs coupling. Impacts of the metal film with different materials and various thickness on SPPs excitation are investigated. It is shown that the highest efficient SPPs excitation is obtained when the gold film thickness is 60 nm. The effect of refractive index of upper and lower symmetric dielectric layer on SPPs excitation is also discussed. The result shows that the decay value of refractive index is 0.3. Our results indicate that this proposed MC-MIM waveguide may offer great potential in designing a new SPPs source.

The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering

Directory of Open Access Journals (Sweden)

Brus V. V.

2010-10-01

Full Text Available The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by three-probe method. There was established that indium contact on TiO2 thin films possessed sharply defined ohmic properties.

Directed Self-Assembly of Diblock Copolymer Thin Films on Prepatterned Metal Nanoarrays.

Science.gov (United States)

Chang, Tongxin; Huang, Haiying; He, Tianbai

2016-01-01

The sequential layer by layer self-assembly of block copolymer (BCP) nanopatterns is an effective approach to construct 3D nanostructures. Here large-scale highly ordered metal nano-arrays prepared from solvent annealed thin films of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) diblock copolymer are used to direct the assembly of the same BCP. The influence of initial loading concentration of metal precursor, the type of metal nanoparticle (gold, platinum, and silver), and the nanoparticle-substrate interaction on the directed assembly behavior of the upper BCP layer have been focused. It is found that the upper BCP film can be completely directed by the gold nanoarray with P2VP domain exclusively located between two adjacent gold nanowires or nanodots, which behaves the same way as on the platinum nanoarray. While the silver nanoarray can be destroyed during the upper BCP self-assembly with the silver nanoparticles assembled into the P2VP domain. Based on the discussions of the surface energy of nanoparticles and the interplay between nanoparticle-substrate interaction and nanoparticle-polymer interaction, it is concluded that the effect of immobilization of nanoparticles on the substrate, together with entropy effect to minimize the energetically unfavorable chain stretching contributes to the most effective alignment between each layer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of 'liquid gold' coatings: Thermal decomposition and formation of metallic thin films

Energy Technology Data Exchange (ETDEWEB)

Deram, V. [Laboratoire de Spectrochimie Infrarouge et Raman, Universite des Sciences et Technologies de Lille, UMR CNRS 8516, Bat C5 - 59655 Villeneuve d' Ascq (France) and Ecole Nationale Superieure des Mines de Paris, Centre de Mise en Forme des Materiaux, UMR CNRS 7635, BP 207, 06904 Sophia-Antipolis (France)]. E-mail: virginie.deram@ensmp.fr; Turrell, S. [Laboratoire de Spectrochimie Infrarouge et Raman, Universite des Sciences et Technologies de Lille, UMR CNRS 8516, Bat C5 - 59655 Villeneuve d' Ascq (France); Darque-Ceretti, E. [Ecole Nationale Superieure des Mines de Paris, Centre de Mise en Forme des Materiaux, UMR CNRS 7635, BP 207, 06904 Sophia-Antipolis (France); Aucouturier, M. [Centre de Recherche et de Restauration des Musees de France, UMR CNRS 171, Palais du Louvre, Porte des Lions, 14 quai F. Mitterrand, 75001 Paris Cedex (France)

2006-09-25

Organo-metallic solutions called liquid gold are largely used to obtain thin gilded films which are employed for decorative, technological and functional uses. However, these films often prove to be fragile with respect to use, resulting in loss of brilliance or even eventual film removal. An understanding of the behaviour of the layers requires good knowledge of the materials themselves. The present work was undertaken to better understand the evolution of the structural properties of liquid gold as it undergoes heat-processing. Accordingly, we followed the thermal decomposition processes of liquid gold coatings and the formation of the gilded metal layer using a combination of experimental techniques. First, thermal analyses coupled with mass spectrometry and infrared spectroscopy gave information concerning the decomposition of the organic medium. It has been found that the process of film formation can be decomposed into three steps, the second of which is an abrupt transition between 300 and 350 deg. C. Details on this transition have been obtained using real-time X-ray Diffraction and Rutherford Backscattering Spectrometry. Above 350 deg. C, the microstructure of the coating is reorganized to obtain a final layer which contains particles, of the size of a few hundreds nanometers, as shown by Transmission Electron Microscopy.

Epitaxial YBa2Cu3O7 films on rolled-textured metals for high temperature superconducting applications

International Nuclear Information System (INIS)

Norton, D.P.; Park, C.; Prouteau, C.

1998-04-01

The epitaxial growth of high temperature superconducting (HTS) films on rolled-textured metal represents a viable approach for long-length superconducting tapes. Epitaxial, 0.5 microm thick YBa 2 Cu 3 O 7 (YBCO) films with critical current densities, J c , greater than 1 MA/cm 2 have been realized on rolled-textured (001) Ni tapes with yttria-stabilized zirconia (YSZ)/CeO 2 oxide buffer layers. This paper describes the synthesis using pulsed-laser deposition (PLD) of epitaxial oxide buffer layers on biaxially-textured metal that comprise the so-called rolling-assisted biaxially-textured substrates (RABiTs trademark). The properties of the buffer and YBa 2 Cu 3 O 7 films on rolled-textured Ni are discussed, with emphasis given to the crystallographic and microstructural properties that determine the superconducting properties of these multilayer structures

Defect-mediated magnetism of transition metal doped zinc oxide thin films

Science.gov (United States)

Roberts, Bradley Kirk

Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

Metal ion reactive thin films using spray electrostatic LbL assembly.

Science.gov (United States)

Krogman, Kevin C; Lyon, Katharine F; Hammond, Paula T

2008-11-20

By using the spray-layer-by-layer (Spray-LbL) technique, the number of metal counterions trapped within LbL coatings is significantly increased by kinetically freezing the film short of equilibrium, potentially limiting interchain penetration and forcing chains to remain extrinsically compensated to a much greater degree than observed in the traditional dipped LbL technique. The basis for the enhanced entrapment of metal ions such as Cu2+, Fe2+, and Ag+ is addressed, including the equilibrium driving force for extrinsic compensation by soft versus hard metal ions and the impact of Spray-LbL on the kinetics of polymer-ion complexation. These polymer-bound metal-ion coatings are also demonstrated to be effective treatments for air filtration, functionalizing existing filters with the ability to strongly bind toxic industrial compounds such as ammonia or cyanide gases, as well as chemical warfare agent simulants such as chloroethyl ethyl sulfide. On the basis of results reported here, future work could extend this method to include other toxic soft-base ligands such as carbon monoxide, benzene, or organophosphate nerve agents.

Preparation of SrIrO{sub 3} thin films by using metal-organic aerosol deposition technique

Energy Technology Data Exchange (ETDEWEB)

Esser, Sebastian; Schneider, Melanie; Moshnyaga, Vasily; Gegenwart, Philipp [1. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2013-07-01

The interplay between spin-orbit coupling and electronic correlations could lead to interesting novel states in iridium oxide materials. We focus on the perovskite phase of SrIrO{sub 3} because Moon et al. [1] showed by using optical spectroscopy and first-principles calculations that the last member of the Ruddlesden-Popper series Sr{sub n+1}Ir{sub n}O{sub 3n+1} (n = ∞) is close to the Mott transition. By using metal-organic aerosol deposition technique we have grown SrIrO{sub 3} thin films on (111)-oriented SrTiO{sub 3} substrates. The cubic symmetry of the SrTiO{sub 3} substrate ensured that the SrIrO{sub 3} thin film grew in the monoclinic perovskite phase. The X-ray diffraction results suggest that SrIrO{sub 3} thin films in perovskite structure were obtained and these show out of plane epitaxy with monoclinic (002){sub m}-orientation. The temperature dependence of the electrical resistivity of these SrIrO{sub 3} thin films were investigated and metallic behavior was observed down to 50 K.

Characterization of PZT thin films on metal substrates; Charakterisierung von PZT-Duennschichten auf Metallsubstraten

Energy Technology Data Exchange (ETDEWEB)

Dutschke, A.

2008-02-02

Lead zirconate titanate (PbZr{sub x}Ti{sub 1-x}O{sub 3},PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Polymer Nanocomposite Film with Metal Rich Surface Prepared by In Situ Single-Step Formation of Palladium Nanoparticles: An Interesting Way to Combine Specific Functional Properties

Directory of Open Access Journals (Sweden)

David Thompson

2016-10-01

Full Text Available This paper presents a continuous single-step route that permits preparation of a thermostable polymer/metal nanocomposite film and to combine different functional properties in a unique material. More precisely, palladium nanoparticles are in situ generated in a polyimide matrix thanks to a designed curing cycle which is applied to a polyamic acid/metal precursor solution cast on a glass plate. A metal-rich surface layer which is strongly bonded to the bulk film is formed in addition to homogeneously dispersed metal nanoparticles. This specific morphology leads to obtaining an optically reflective film. The metal nanoparticles act as gas diffusion barriers for helium, oxygen, and carbon dioxide; they induce a tortuosity effect which allows dividing the gas permeation coefficients by a factor near to 2 with respect to the neat polyimide matrix. Moreover, the ability of the in situ synthesized palladium nanoparticles to entrap hydrogen is evidenced. The nanocomposite film properties can be modulated as a function of the location of the film metal-rich surface with respect to the hydrogen feed. The synthesized nanocomposite could represent a major interest for a wide variety of applications, from specific coatings for aerospace or automotive industry, to catalysis applications or sensors.

Metal (Ag/Ti-Containing Hydrogenated Amorphous Carbon Nanocomposite Films with Enhanced Nanoscratch Resistance: Hybrid PECVD/PVD System and Microstructural Characteristics

Directory of Open Access Journals (Sweden)

Marios Constantinou

2018-03-01

Full Text Available This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a–C:H:Me of controlled size and concentration. Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD and Physical Vapor Deposition (PVD technologies. The a–C:H matrix was deposited through the acceleration of carbon ions generated through a radio-frequency (RF plasma source by cracking methane, whereas metallic nanoparticles were generated and deposited using terminated gas condensation (TGC technology. The resulting material was a hydrogenated amorphous carbon film with controlled physical properties and evenly dispersed metallic nanoparticles (here Ag or Ti. The physical, chemical, morphological and mechanical characteristics of the films were investigated through X-ray reflectivity (XRR, Raman spectroscopy, Scanning Electron Microscopy (SEM, Atomic Force Microscopy (AFM, Transmission Electron Microscopy (TEM and nanoscratch testing. The resulting amorphous carbon metal nanocomposite films (a–C:H:Ag and a–C:H:Ti exhibited enhanced nanoscratch resistance (up to +50% and low values of friction coefficient (<0.05, properties desirable for protective coatings and/or solid lubricant applications. The ability to form nanocomposite structures with tunable coating performance by potentially controlling the carbon bonding, hydrogen content, and the type/size/percent of metallic nanoparticles opens new avenues for a broad range of applications in which mechanical, physical, biological and/or combinatorial properties are required.

A nanohole in a thin metal film as an efficient nonlinear optical element

Energy Technology Data Exchange (ETDEWEB)

Konstantinova, T. V.; Melent' ev, P. N.; Afanas' ev, A. E. [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation); Kuzin, A. A.; Starikov, P. A.; Baturin, A. S. [Moscow Institute of Physics and Technology (Russian Federation); Tausenev, A. V.; Konyashchenko, A. V. [OOO Avesta-proekt (Russian Federation); Balykin, V. I., E-mail: balykin@isan.tyroitsk.ru [Russian Academy of Sciences, Institute of Spectroscopy (Russian Federation)

2013-07-15

The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10{sup 13} W/cm{sup 2}.

In situ fabrication of electrochemically grown mesoporous metallic thin films by anodic dissolution in deep eutectic solvents.

Science.gov (United States)

Renjith, Anu; Roy, Arun; Lakshminarayanan, V

2014-07-15

We describe here a simple electrodeposition process of forming thin films of noble metallic nanoparticles such as Au, Ag and Pd in deep eutectic solvents (DES). The method consists of anodic dissolution of the corresponding metal in DES followed by the deposition on the cathodic surface. The anodic dissolution process in DES overcomes the problems associated with copious hydrogen and oxygen evolution on the electrode surface when carried out in aqueous medium. The proposed method utilizes the inherent abilities of DES to act as a reducing medium while simultaneously stabilizing the nanoparticles that are formed. The mesoporous metal films were characterized by SEM, XRD and electrochemical techniques. Potential applications of these substrates in surface enhanced Raman spectroscopy and electrocatalysis have been investigated. A large enhancement of Raman signal of analyte was achieved on the mesoporous silver substrate after removing all the stabilizer molecules from the surface by calcination. The highly porous texture of the electrodeposited film provides superior electro catalytic performance for hydrogen evolution reaction (HER). The mechanisms of HER on the fabricated substrates were studied by Tafel analysis and electrochemical impedance spectroscopy (EIS). Copyright © 2014 Elsevier Inc. All rights reserved.

Ferromagnetism and temperature-dependent electronic structure in metallic films

International Nuclear Information System (INIS)

Herrmann, T.

1999-01-01

-, layer-, and temperature-dependent. The last part of this work is concerned about the temperature-driven reorientation transition in thin metallic films. For the description of the magnetic anisotropy in thin films the dipole interaction as well as the spin-orbit interaction have to be included in the model. By calculating the temperature-dependence of the magnetic anisotropy energy it is found that both types of temperature-driven reorientation transitions, from out-of-plane to in-plane (''Fe-type'') and from in-plane to out-of-plane(''Ni-type'') magnetization are possible within the generalized Hubbard films

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Preparation and properties of the (Sr,BaNb2O6 thin films by using the sputtering method

Directory of Open Access Journals (Sweden)

Diao Chien-Chen

2017-01-01

Full Text Available Strontium barium niobate (Sr0.3Ba0.7Nb2O6, SBN thin films were deposited on silicon substrate by using the radio frequency magnetron sputtering and under different deposition power and time at room temperature. Surface morphology and thicknesses of the SBN thin films were characterized by field emission scanning electron microscopy. The crystallization films at different deposition power and time were analyzed by X-ray diffraction (XRD using CuKα radiation from a Rigaku rotating anode with an incident angle of 2°. The remnant polarization (Pr, saturation polarization (Ps, and minimum coercive field (Ec properties of the metal-ferroelectric-metal (MFM structure were measured using ferroelectric material test instrument. The SBN thin films deposited at 90 min and 125 W had the maximum Pr, Ps, and minimum Ec of 1.26 μC/cm2, 2.41 μC/cm2, and 201.6 kV/cm, respectively. From above results, it knows that the SBN thin films suit for application on ferroelectric random access memory (FeRAM.

High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Brusasco, R.M.

1989-01-01

A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

Improved conductivity of infinite-layer LaNiO{sub 2} thin films by metal organic decomposition

Energy Technology Data Exchange (ETDEWEB)

Ikeda, Ai [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan); Research Fellow of the Japan Society for the Promotion of Science (Japan); Manabe, Takaaki [National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8565 (Japan); Naito, Michio, E-mail: minaito@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan)

2013-12-15

Highlights: •LaNiO{sub 2} films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO{sub 2}. •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO{sub 2} thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO{sub 2} is isostructural to SrCuO{sub 2}, the parent compound of high-T{sub c} Sr{sub 0.9}La{sub 0.1}CuO{sub 2} with T{sub c} = 44 K, and has 3d{sup 9} configuration, which is very rare in oxides but common to high-T{sub c} copper oxides. The bulk synthesis of LaNiO{sub 2} is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO{sub 2} is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO{sub 2}. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

Dealloyed Ruthenium Film Catalysts for Hydrogen Generation from Chemical Hydrides

Directory of Open Access Journals (Sweden)

Ramis B. Serin

2017-07-01

Full Text Available Thin-film ruthenium (Ru and copper (Cu binary alloys have been prepared on a Teflon™ backing layer by cosputtering of the precious and nonprecious metals, respectively. Alloys were then selectively dealloyed by sulfuric acid as an etchant, and their hydrogen generation catalysts performances were evaluated. Sputtering time and power of Cu atoms have been varied in order to tailor the hydrogen generation performances. Similarly, dealloying time and the sulfuric acid concentration have also been altered to tune the morphologies of the resulted films. A maximum hydrogen generation rate of 35 mL min−1 was achieved when Cu sputtering power and time were 200 W and 60 min and while acid concentration and dealloying time were 18 M and 90 min, respectively. It has also been demonstrated that the Ru content in the alloy after dealloying gradually increased with the increasing the sputtering power of Cu. After 90 min dealloying, the Ru to Cu ratio increased to about 190 times that of bare alloy. This is the key issue for observing higher catalytic activity. Interestingly, we have also presented template-free nanoforest-like structure formation within the context of one-step alloying and dealloying used in this study. Last but not least, the long-time hydrogen generation performances of the catalysts system have also been evaluated along 3600 min. During the first 600 min, the catalytic activity was quite stable, while about 24% of the catalytic activity decayed after 3000 min, which still makes these systems available for the development of robust catalyst systems in the area of hydrogen generation.

Carbon nanotubes paste sensor modified with bismuth film for determination of metallic ions in ethanol fuel

Directory of Open Access Journals (Sweden)

Felipe Augusto Gorla

2015-05-01

Full Text Available In the present study an anodic stripping voltammetric method using a bismuth film modified carbon nanotubes paste electrode for simultaneous determination of metals Zn2+, Cd2+and Pb2+in ethanol fuel is described. The metallic ions were preconcentrated on the bismuth film in the time and deposition potential of 500 s and -1.2 V and the stripping step was carried out by square wave voltammetry (frequency of 15 Hz, pulse amplitude of 25 mV and potential step of 5 mV. Acetate buffer at 0.1 mol L-1concentration and pH 4.5 was used as support electrolyte. The method showed linearity including the analytical blank up to 48.39 ?g L-1 for the metals and the obtained limits of detection were 3.36, 0.32 and 0.47 ?g L-1for Zn2+, Cd2+and Pb2+, respectively. The proposed method was applied in ethanol fuel samples.

New EB curing system for narrow web, using Min-EB

International Nuclear Information System (INIS)

Nakamura, Tetsuhisa; Tominaga, Hiroshi; Oizumi, Kei

2003-01-01

We, TOYO INK, developed the new equipment of EB curing system for narrow web composed of vacuum tube-type electron beam irradiation apparatus called Min-EB which is specialized with ultra-low voltage, 50-60 KV, and not damaging against the substrate. The new development is very small size, 66 cm width, 64 cm depth, 80 cm height and convenient to install into printing and coating machines. Several tubes, Min-EB, are assembled to be multi-tube module, called MTM, to easily handle. Basically we can change the irradiation width and printing and coating speed by increasing MTM due to the sheet size and printing and coating condition. We got good results, showing high density for the printed film, after used new EB curing system. (author)

Corrosion of valve metals

International Nuclear Information System (INIS)

Draley, J.E.

1976-01-01

A general survey related to the corrosion of valve metals or film-forming metals. The way these metals corrode with some general examples is described. Valve metals form relatively perfect oxide films with little breakdown or leakage when anodized

Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Jnawali, Giriraj

2009-06-09

This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are