Electrochemical properties of lanthanum nitride with calcium nitride additions

International Nuclear Information System (INIS)

Lesunova, R.P.; Fishman, L.S.

1986-01-01

This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

Nitride stabilized core/shell nanoparticles

Science.gov (United States)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

2018-01-30

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

TXRF analysis of trace metals in thin silicon nitride films

International Nuclear Information System (INIS)

Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

2000-01-01

As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

Influence of some metal substitutions on the superconducting behaviour of molybdenum borocarbide. [Mo/sub 2-x/M/sub x/BC; M = Zr, Nb, Rh, Hf, Ta, or W

Energy Technology Data Exchange (ETDEWEB)

Lejay, P.; Chevalier, B.; Etourneau, J.; Hagenmuller, P. [Bordeaux-1 Univ., 33 - Talence (France)

1981-11-15

The superconducting properties of the Mosub(2-x)Msub(x)BC borocarbides (M equivalent to Zr, Nb, Rh, Hf, Ta, W) are reported. They have an Mo/sub 2/BC-type structure with orthorhombic symmetry and the space group Cmcm. Stoichiometric powder samples were prepared by arc melting. A large single crystal of Mo/sub 2/BC was obtained by a Czochralski-type method. The upper limit of x depends mainly on the size of the M atoms. A study of the magnetization as a function of field at different temperatures shows that all borocarbides are type II superconductors. Resistivity measurements give generally a critical temperature Tsub(cr) above 4.2 K. Tsub(cr) and the critical fields Hsub(c2) increase for rhodium substitution but decrease in other cases. For comparison the superconducting properties are discussed in terms of the valence electron concentration and the molar volume.

Platinum group metal nitrides and carbides: synthesis, properties and simulation

International Nuclear Information System (INIS)

Ivanovskii, Alexander L

2009-01-01

Experimental and theoretical data on new compounds, nitrides and carbides of the platinum group 4d and 5d metals (ruthenium, rhodium, palladium, osmium, iridium, platinum), published over the past five years are summarized. The extreme mechanical properties of platinoid nitrides and carbides, i.e., their high strength and low compressibility, are noted. The prospects of further studies and the scope of application of these compounds are discussed.

Investigation of Ternary Transition-Metal Nitride Systems by Reactive Cosputtering

NARCIS (Netherlands)

Dover, R.B. Van; Hessen, B.; Werder, D.; Chen, C.-H.; Felder, R.J.

1993-01-01

A reactive dc cosputtering technique has been used to evaluate compound formation in bimetallic transition-metal nitride systems. A wide range in M-M’ composition can be studied in a single deposition run, and the method is applicable to nonalloying metal combinations. Using this technique, it was

Thermal plasma synthesis of transition metal nitrides and alloys

International Nuclear Information System (INIS)

Ronsheim, P.; Christensen, A.N.; Mazza, A.

1981-01-01

Applications of arc plasma processing to high-temperature chemistry of Group V nitrides and Si and Ge alloys are studied. The transition metal nitrides 4f-VN, 4f-NbN, and 4f-TaN are directly synthesized in a dc argon-nitrogen plasma from powders of the metals. A large excess of N 2 is required to form stoichiometric 4f-VN, while the Nb and Ta can only be synthesized with a substoichiometric N content. In a dc argon plasma the alloys V 3 Si, VSi 2 , NbSi 2 , NbGe 2 , Cr 3 Si, and Mo 3 Si are obtained from powder mixtures of the corresponding elements. The compounds are identified by x-ray diffraction patterns and particle shape and size are studied by electron microscopy

Preparation of uranium nitride

International Nuclear Information System (INIS)

Potter, R.A.; Tennery, V.J.

1976-01-01

A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

Science.gov (United States)

Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

2016-09-01

The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

Construction of stable Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} metal/non-metal nitride hybrids with enhanced visible-light photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Jiang, Yinhua, E-mail: yms418@126.com [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 2120013,PR China (China); Liu, Peipei; Chen, YeCheng; Zhou, Zhengzhong; Yang, Haijian [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 2120013,PR China (China); Hong, Yuanzhi; Li, Fan; Ni, Liang [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 2120013,PR China (China); Yan, Yongsheng [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 2120013,PR China (China); Gregory, Duncan H, E-mail: duncan.gregory@glasgow.ac.uk [School of Chemistry, University of Glasgow, Glasgow G12 8QQ (United Kingdom)

2017-01-01

Highlights: • Novel Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} metal/non-metal nitride hybrids were synthesized. • The hybrid nitrides showed enhanced visible-light photocatalytic performance. • The Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} hybrid nitride exhibited excellent photostability. • The hole is the main photoactive specie for the degradation of RhB. - Abstract: In this paper, a novel Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} metal/non-metal nitride hybrid was successfully synthesized by a facile impregnation method. The photocatalytic activity of Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} hybrid nitrides was evaluated by the degradation of organic dye rhodamine B (RhB) under visible light irradiation, and the result indicated that all Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} samples exhibited distinctly enhanced photocatalytic activities for the degradation of RhB than pure g-C{sub 3}N{sub 4}. The optimal Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} composite sample, with Ta{sub 3}N{sub 5} mass ratio of 2%, demonstrated the highest photocatalytic activity, and its degradation rate constant was 2.71 times as high as that of pure g-C{sub 3}N{sub 4}. The enhanced photocatalytic activity of this Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} metal/metal-free nitride was predominantly attributed to the synergistic effect which increased visible-light absorption and facilitated the efficient separation of photoinduced electrons and holes. The Ta{sub 3}N{sub 5}/g-C{sub 3}N{sub 4} hybrid nitride exhibited excellent photostability and reusability. The possible mechanism for improved photocatalytic performance was proposed. Overall, this work may provide a facile way to synthesize the highly efficient metal/metal-free hybrid nitride photocatalysts with promising applications in environmental purification and energy conversion.

Separation of zirconium--hafnium by nitride precipitation

International Nuclear Information System (INIS)

Anderson, R.N.; Parlee, N.A.

1977-01-01

A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

Pressure induced phase transitions in transition metal nitrides: Ab initio study

Energy Technology Data Exchange (ETDEWEB)

Srivastava, Anurag; Chauhan, Mamta [Advanced Material Research Lab, Indian Institute of Information Technology and Management, Gwalior 474010 (India); Singh, R.K. [Department of Physics, ITM University, Gurgaon 122017 (India)

2011-12-15

We have analyzed the stability of transition metal nitrides (TMNs) XN (X = Ti, Zr, Hf, V, Nb, Ta) in their original rocksalt (B1) and hypothetical CsCl (B2) type phases under high compression. The ground state total energy calculation approach of the system has been used through the generalized gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE) type parameterization as exchange correlation functional. In the whole series of nitrides taken into consideration, tantalum nitride is found to be the most stable. We have observed that under compression the original B1-type phase of these nitrides transforms to a B2-type phase. We have also discussed the computation of ground state properties, like the lattice constant (a), bulk modulus (B{sub 0}) and first order pressure derivative of the bulk modulus (B'{sub 0}) of the TMNs and their host elements. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Predicted stability, structures, and magnetism of 3d transition metal nitrides: the M4N phases

NARCIS (Netherlands)

Fang, C.M.; Koster, R.S.; Li, W.F.; van Huis, M.A.

2014-01-01

The 3d transition metal nitrides M4N (Sc4N, Ti4N, V4N, Cr4N, Mn4N, Fe4N, Co4N, Ni4N, and Cu4N) have unique phase relationships, crystal structures, and electronic and magnetic properties. Here we present a systematic density functional theory (DFT) study on these transition metal nitrides, assessing

Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

International Nuclear Information System (INIS)

Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

2014-01-01

Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

Characterization of a glass frit free TiCuAg-thick film metallization applied on aluminium nitride

International Nuclear Information System (INIS)

Reicher, R.; Smetana, W.; Adlassnig, A.; Schuster, J. C.; Gruber, U.

1997-01-01

The metallization of aluminium nitride substrates by glass frit free Ti CuAg-thick film pastes were investigated. Adhesion properties of the conductor paste were tested by measuring tensile strength and compared with commercial Cu-thick film pastes (within glass frit). Also numerical analysis of temperature-distribution and thermal extension of metallized aluminium nitride ceramic, induced by a continuous and a pulsed working electronic device were made with a finite element program. (author)

Metal-functionalized single-walled graphitic carbon nitride nanotubes: a first-principles study on magnetic property

Directory of Open Access Journals (Sweden)

Shenoy Vivek

2011-01-01

Full Text Available Abstract The magnetic properties of metal-functionalized graphitic carbon nitride nanotubes were investigated based on first-principles calculations. The graphitic carbon nitride nanotube can be either ferromagnetic or antiferromagnetic by functionalizing with different metal atoms. The W- and Ti-functionalized nanotubes are ferromagnetic, which are attributed to carrier-mediated interactions because of the coupling between the spin-polarized d and p electrons and the formation of the impurity bands close to the band edges. However, Cr-, Mn-, Co-, and Ni-functionalized nanotubes are antiferromagnetic because of the anti-alignment of the magnetic moments between neighboring metal atoms. The functionalized nanotubes may be used in spintronics and hydrogen storage.

Synthesis and characterization of group V metal carbide and nitride catalysts

Science.gov (United States)

Kwon, Heock-Hoi

1998-11-01

Group V transition metal carbides and nitrides were prepared via the temperature programmed reaction (TPR) of corresponding oxides with NHsb3 or a CHsb4/Hsb2 mixture. Except for the tantalum compounds, phase-pure carbides and nitrides were prepared. The vanadium carbides and nitrides were the most active and selective catalysts. Therefore the principal focus of the research was the preparation, characterization, and evaluation of high surface area vanadium nitride catalysts. A series of vanadium nitrides with surface areas up to 60 msp2/g was prepared. Thermal gravimetric analysis coupled with x-ray diffraction and scanning electron microscopy indicated that the solid-state reaction proceeded by the sequential reduction of Vsb2Osb5 to VOsb{0.9} and concluded with the topotactic substitution of nitrogen for oxygen in VOsb{0.9}. The transformation of Vsb2Osb5 to VN was pseudomorphic. An experimental design was executed to determine effects of the heating rates and space velocities on the VN microstructures. The heating rates had minor effects on the surface areas and pore size distributions; however, increasing the space velocity significantly increased the surface area. The materials were mostly mesoporous. Oxygen chemisorption on the vanadium nitrides scaled linearly with the surface area. The corresponding O/Vsbsurface ratio was ≈0.6. The vanadium nitrides were active for butane activation and pyridine hydrodenitrogenation. During butane activation, their selectivities towards dehydrogenation products were as high as 98%. The major product in pyridine hydrodenitrogenation was pentane. The reaction rates increased almost linearly with the surface area suggesting that these reactions were structure insensitive. The vanadium nitrides were not active for crotonaldehyde hydrogenation; however, they catalyzed an interesting ring formation reaction that produced methylbenzaldehyde and xylene from crotonaldehyde. A new method was demonstrated for the production of very

Non-locality and the flux line lattice square to hexagonal symmetry transition in the borocarbide superconductors

DEFF Research Database (Denmark)

Eskildsen, M.R.; Fisher, I.R.; Gammel, P.L.

2000-01-01

Using small angle neutron scattering we have studied the square to hexagonal flux line lattice symmetry transition in different members of the borocarbide superconductors. The studies were performed using samples of ErNi2B2C, Lu(Ni1-xCox)(2)B2C with cobalt doping levels x = 1.5-9% and Y0.64Lu0.36Ni...

Chapter 19: Catalysis by Metal Carbides and Nitrides

Energy Technology Data Exchange (ETDEWEB)

Schaidle, Joshua A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nash, Connor P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yung, Matthew M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Chen, Yuan [Pacific Northwest National Laboratory; Carl, Sarah [University of Michigan; Thompson, Levi [University of Michigan

2017-08-09

Early transition metal carbides and nitrides (ETMCNs), materials in which carbon or nitrogen occupies interstitial sites within a parent metal lattice, possess unique physical and chemical properties that motivate their use as catalysts. Specifically, these materials possess multiple types of catalytic sites, including metallic, acidic, and basic sites, and as such, exhibit reactivities that differ from their parent metals. Moreover, their surfaces are dynamic under reaction conditions. This chapter reviews recent (since 2010) experimental and computational investigations into the catalytic properties of ETMCN materials for applications including biomass conversion, syngas and CO2 upgrading, petroleum and natural gas refining, and electrocatalytic energy conversion, energy storage, and chemicals production, and attempts to link catalyst performance to active site identity/surface structure in order to elucidate the present level of understanding of structure-function relationships for these materials. The chapter concludes with a perspective on leveraging the unique properties of these materials to design and develop improved catalysts through a dedicated, multidisciplinary effort.

Angular-dependent I-V characteristics in borocarbide superconductor YNi2B2C

International Nuclear Information System (INIS)

Chu, R M; Chen, Q Y; Chu, W K

2006-01-01

We present angular-dependent current-voltage (I-V) measurements in borocarbide YNi 2 B 2 C single crystals near the vortex-glass irreversible line. External magnetic fields are applied along the angle θ with respect to the c-axis. The nonlinear I-V curves reveal scaling behaviour near the transition. Using the scaling analysis, the relevant critical exponents and vortex transition temperatures are determined for all orientations. The data agrees well with the vortex-glass (VG) model. No evidence was found that supports the existence of a Bose-glass (BG) type of transition

Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

2008-07-01

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

2008-01-01

The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

Simple process to fabricate nitride alloy powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

2013-01-01

Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

Catalytic properties of lanthanide amide, imide and nitride formed by thermal degradation of liquid ammonia solutions of Eu and Yb metal

International Nuclear Information System (INIS)

Imamura, H.; Mizuno, K.; Ohishi, K.; Suda, E.; Kanda, K.; Sakata, Y.; Tsuchiya, S.

1998-01-01

The catalytic properties of lanthanide amide, imide and nitride prepared by the use of liquid ammonia solutions of lanthanide metals (Ln=Eu and Yb) were studied for catalytic hydrogenation. The reaction of Eu or Yb metal solutions in liquid ammonia with silica yielded SiO 2 -grafted lanthanide amide in the divalent state. The divalent amide showed catalytic activity for the selective hydrogenation of dienes and benzene. It was found that partial hydrogenation of benzene occurred with a very high selectivity for cyclohexene. Amides of calcium, strontium and barium were examined similarly in connection with catalytic studies on divalent amides. Imide and nitride, into which the lanthanide (Ln/AC) deposited by impregnation of active carbon (AC) with liquid ammonia solutions of lanthanide metals were converted thermally, were studied catalytically. It was concluded that imide or imide-like species generated during the thermal degradation of lanthanide amide to nitride were very active in the hydrogenation of ethene. Lanthanide nitride was virtually inactive, but the nitride highly dispersed on active carbon was activated when subjected to evacuation treatment above about 1000 K. (orig.)

Black tungsten nitride as a metallic photocatalyst for overall water splitting operable at up to 765 nm

Energy Technology Data Exchange (ETDEWEB)

Wang, Yu Lei; Li, Yu Hang; Wang, Xue Lu; Chen, Ai Ping; Yang, Hua Gui [Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai (China); Nie, Ting; Gong, Xue Qing [Key Laboratory for Advanced Materials, Centre for Computational Chemistry and Research Institute of Industrial Catalysis, East China University of Science and Technology, Shanghai (China); Zheng, Li Rong [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences (China)

2017-06-19

Semiconductor photocatalysts are hardly employed for overall water splitting beyond 700 nm, which is due to both thermodynamic aspects and activation barriers. Metallic materials as photocatalysts are known to overcome this limitation through interband transitions for creating electron-hole pairs; however, the application of metallic photocatalysts for overall water splitting has never been fulfilled. Black tungsten nitride is now employed as a metallic photocatalyst for overall water splitting at wavelengths of up to 765 nm. Experimental and theoretical results together confirm that metallic properties play a substantial role in exhibiting photocatalytic activity under red-light irradiation for tungsten nitride. This work represents the first red-light responsive photocatalyst for overall water splitting, and may open a promising venue in searching of metallic materials as efficient photocatalysts for solar energy utilization. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

One-step synthesis of 2D-layered carbon wrapped transition metal nitrides from transition metal carbides (MXenes) for supercapacitors with ultrahigh cycling stability.

Science.gov (United States)

Yuan, Wenyu; Cheng, Laifei; Wu, Heng; Zhang, Yani; Lv, Shilin; Guo, Xiaohui

2018-03-13

A novel one-step method to synthesize 2D carbon wrapped TiN (C@TiN) was proposed via using 2D metal carbides (MXenes) as precursors. This study provides a novel approach to synthesize carbon wrapped metal nitrides.

The Use of Plasma Technique in Nitridation Process of Metal Alloy DIN 42CrMo4

International Nuclear Information System (INIS)

Purwanto; Malau, Viktor; Tjipto Sujitno

2003-01-01

Nitridation process with plasma technique is one of technique for surface treatment of a material. Research on plasma technique for nitridation process has been carried out to find out the nitridation effect on properties of metal alloy DIN 42CrM04. Nitridation process with plasma technique was conducted in a vacuum tube under following conditions 0.36 torr of pressure, 300 o C of temperature and nitridation times 1, 2, and 3 hours. Nitridation process was followed by hardness test measurement using High Quality Micro Hardness Tester machine, serial number MM-0054, as well as microstructure test using Scanning Electron Microscope (SEM) coupled with Energy Dispersive Spectroscopy (EDS) EDAX-DX4. The results showed that surface hardness increased after nitridation process. For nitridation processes for 1, 2, and 3 hours, the hardness increased from 291 kg/mm 2 to 303 kg/mm 2 , 324 kg/mm 2 and 403 kg/mm 2 , respectively. The results from micro structure observation showed that new phase of Ferro Nitride (Fe 4 N) has been formed with 4.17% nitrogen weight equivalent to 14.73% nitrogen atom and with the thickness of 5.71 μm, 5.08% nitrogen weight or 17.51% nitrogen atom and 6.78 μm thickness, and 5.69% nitrogen weight or 19.24% nitrogen atom and 8.57 μm thickness. (author)

Formation of titanium nitride layers on titanium metal: Results of XPS and AES investigations

International Nuclear Information System (INIS)

Moers, H.; Pfennig, G.; Klewe-Nebenius, H.; Penzhorn, R.D.; Sirch, M.; Willin, E.

1988-09-01

The reaction of titanium metal with gaseous nitrogen and ammonia at temperatures of 890 0 C leads to the formation of nitridic overlayers on the metallic substrate. The thicknesses of the overlayers increase with increasing reaction time. Under comparable conditions ammonia reacts much slower than nitrogen. XPS and AES depth profile analyses show continuous changes of the in-depth compositions of the overlayers. This can be interpreted in terms of a very irregular thickness of the overlayers, an assumption which is substantiated by local AES analyses and by the observation of a pronounced crystalline structure of the substrate after annealing pretreatment, which can give rise to locally different reaction rates. The depth profile is also influenced by the broad ranges of stability of the titanium nitride phases formed during the reaction. The quantitative analysis of the titanium/nitrogen overlayers by AES is difficult because of the overlap of titanium and nitrogen Auger peaks. In quantitative XPS analysis problems arise due to difficulties in defining Ti 2p peak areas. This work presents practical procedures for the quantitative evaluation by XPS and AES of nitridic overlayers with sufficient accuracy. (orig.) [de

Solar selective performance of metal nitride/oxynitride based magnetron sputtered thin film coatings: a comprehensive review

Science.gov (United States)

Ibrahim, Khalil; Taha, Hatem; Mahbubur Rahman, M.; Kabir, Humayun; Jiang, Zhong-Tao

2018-03-01

Since solar-thermal collectors are considered to be the most direct way of converting solar energy into usable forms, in the last few years growing attention has been paid to the development of transition metal nitride and metal oxynitride based thin film selective surfaces for solar-thermal collectors, in order to harvest more solar energy. A solar-thermal energy system, generally, shows very high solar absorption of incident solar radiation from the solar-thermal collectors in the visible range (0.3 to 2.5 μm) and extremely low thermal losses through emission (or high reflection) in the infrared region (≥2.5 μm). The efficiency of a solar-thermal energy conversion system can be improved by the use of solar selective surfaces consisting of novel metallic nanoparticles embedded in metal nitride/oxynitride systems. In order to enhance the effectiveness of solar-thermal devices, solar selective surfaces with high thermal stability are a prerequisite. Over the years, substantial efforts have been made in the field of solar selective surfaces to attain higher solar absorptance and lower thermal emittance in high temperature (above 400 °C) applications. In this article, we review the present state-of-the-art transition metal nitride and/or oxynitride based vacuum sputtered nanostructured thin film coatings, with respect to their optical and solar selective surface applications. We have also summarized the solar selectivity data from recently published investigations, including discussion on some potential applications for these materials.

Synthesis of IV-VI Transition Metal Carbide and Nitride Nanoparticles Using a Reactive Mesoporous Template for Electrochemical Hydrogen Evolution Reaction

KAUST Repository

Alhajri, Nawal Saad

2016-01-01

Interstitial carbides and nitrides of early transition metals in Groups IV-VI exhibit platinum-like behavior which makes them a promising candidate to replace noble metals in a wide variety of reactions. Most synthetic methods used to prepare these materials lead to bulk or micron size powder which limits their use in reactions in particular in catalytic applications. Attempts toward the production of transition metal carbide and nitride nanoparticles in a sustainable, simple and cheap manner have been rapidly increasing. In this thesis, a new approach was presented to prepare nano-scale transition metal carbides and nitrides of group IV-VI with a size as small as 3 nm through the reaction of transition metal precursor with mesoporous graphitic carbon nitride (mpg-C3N4) that not only provides confined spaces for nanoparticles formation but also acts as a chemical source of nitrogen and carbon. The produced nanoparticles were characterized by powder X-ray diffraction (XRD), temperature-programmed reaction with mass spectroscopy (MS), CHN elemental analyses, thermogravimetric analyses (TGA), nitrogen sorption, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The effects of the reaction temperature, the ratio of the transition metal precursor to the reactive template (mpg-C3N4), and the selection of the carrier gas (Ar, N2, and NH3) on the resultant crystal phases and structures were investigated. The results indicated that different tantalum phases with cubic structure, TaN, Ta2CN, and TaC, can be formed under a flow of nitrogen by changing the reaction temperatures. Two forms of tantalum nitride, namely TaN and Ta3N5, were selectively formed under N2 and NH3 flow, respectively. Significantly, the formation of TaC, Ta2CN, and TaN can be controlled by altering the weight ratio of the C3N4 template relative to the Ta precursor at 1573 K under a flow of nitrogen where high C3N4/Ta precursor ratio generally resulted in high carbide

Systematic study of formation and crystal structure of 3d-transition metal nitrides synthesized in a supercritical nitrogen fluid under 10 GPa and 1800 K using diamond anvil cell and YAG laser heating

International Nuclear Information System (INIS)

Hasegawa, Masashi; Yagi, Takehiko

2005-01-01

Syntheses of 3d-transition metal (Ti-Cu) nitrides have been tried in a supercritical nitrogen fluid at high pressures (about 10 GPa) and high temperatures (about 1800 K) using diamond anvil cell and YAG laser heating system. Nitrides, such as TiN, VN, CrN, Mn 3 N 2 , Fe 2 N, Co 2 N and Ni 3 N have been successfully synthesized easily by a simple direct nitriding reaction between metal and fluid nitrogen in a short time, while any Cu nitrides were not synthesized. These results indicate that the ratio of nitrogen to metal, N/M, of the nitride decreases from 1 to 0 with the sequence from the early transition metal nitrides to the late transition metal ones. The systematic change of the N/M ratio and crystal structure of the 3d-transition metal nitrides is discussed and interpreted on the basis of the electron arrangement of the 3d-transition metal which is relevant to its coordination number

New Routes to Lanthanide and Actinide Nitrides

Energy Technology Data Exchange (ETDEWEB)

Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

2009-06-15

The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

International Nuclear Information System (INIS)

Ngai, K.L.; Hsia, Y.

1982-01-01

A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

New catalysts for coal processing: Metal carbides and nitrides

Energy Technology Data Exchange (ETDEWEB)

S. Ted Oyama; David F. Cox

1999-12-03

The subject of this research project was to investigate the catalytic properties of a new class of materials, transition metal carbides and nitrides, for treatment of coal liquid and petroleum feedstocks. The main objectives were: (1) preparation of catalysts in unsupported and supported form; (2) characterization of the materials; (3) evaluation of their catalytic properties in HDS and HDN; (4) measurement of the surface properties; and (5) observation of adsorbed species. All of the objectives were substantially carried out and the results will be described in detail below. The catalysts were transition metal carbides and nitrides spanning Groups 4--6 in the Periodic Table. They were chosen for study because initial work had shown they were promising materials for hydrotreating. The basic strategy was first to prepare the materials in unsupported form to identify the most promising catalyst, and then to synthesize a supported form of the material. Already work had been carried out on the synthesis of the Group VI compounds Mo{sub 2}C, Mo{sub 2}N, and WC, and new methods were developed for the Group V compounds VC and NbC. All the catalysts were then evaluated in a hydrotreating test at realistic conditions. It was found that the most active catalyst was Mo{sub 2}C, and further investigations of the material were carried out in supported form. A new technique was employed for the study of the bulk and surface properties of the catalysts, near edge x-ray absorption spectroscopy (NEXAFS), that fingerprinted the electronic structure of the materials. Finally, two new research direction were explored. Bimetallic alloys formed between two transition metals were prepared, resulting in catalysts having even higher activity than Mo{sub 2}C. The performance of the catalysts in hydrodechloration was also investigated.

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Topology and symmetry analysis of rare earth borocarbides structural family, analogy to hexaferrites and relation to properties

International Nuclear Information System (INIS)

Belokoneva, E.L.; Mori, Takao

2009-01-01

The topology and symmetry analysis was applied to a series of rare earth borocarbide compounds, which have been gaining increasing interest due to their magnetic and thermoelectric properties. Using principles of OD theory, the crystal structures were deconvoluted into L(1) (B 12 icosahedra and C-B-C chain) layers and L(2) (rare earth and B 6 octahedral) layers. The arrangement of B 12 icosahedra in the L(1) layer is equal to close packed spheres, however, symmetry of the B 12 block lowers symmetry of the resulting layer from P 6/mmm to P 3m1. Both layers, L(1) and L(2) possess symmetry P 3m1 and the conjugation of L(1) with L(2) layers occurs in accordance with the symmetry elements. No disorder may appear here because of equal symmetry of single layers and layer pairs and it is not a classical OD family. Only the increasing of the amount of one type of layers, namely L(1), provides the structural variations. Close analogy to the hexagonal ferrites family has been found. Topology and symmetry analysis reveals principles in the building up of the structural family, gives an insight into the particular order-disorder formation mechanism/criteria of these homologous borocarbide compounds and as the result relation to the properties (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

New routes to nitrogen-rich transition metal nitrides: Synthesis of novel polymorphs of Hf3N4

Science.gov (United States)

Salamat, Ashkan; Hector, A.; Gray, B.; Kimber, S.; Bouvier, P.; McMillan, P.

2013-06-01

One of the most obvious features of transition metal nitride chemistry is that the maximum formal oxidation state of the metal is rarely as high as in the corresponding oxides or fluorides. Much of the interest in the high oxidation phases stems from the desire to identify the next generation of photocatalytic materials with tuneable bandgaps. Experiments in the laser heated diamond anvil cell (LHDAC) between the direct reaction of metals and nitrogen have previously produced a number of important new main group nitride phases. This technique has also demonstrated its potential for formation of new nitrogen-rich transition metal nitride phases. Alternative methods with the development of ``soft'' routes to new phases with high nitrogen content also offer the possibility of obtaining metastable phases through topotactic conversions. Using LHDAC in situ with synchrotron angle dispersive diffraction techniques we have crystallised at high pressures and temperatures two novel polymorphs of Hf3N4. Starting with an amide-derived nanocrystalline Hf3N4 sample we have identified a novel tetragonal (I4/ m) polymorph at 15 GPa and 1500K and a second high pressure orthorhombic (Pnma) polymorph at 30 GPa and 2000 K. This study demonstrates that the combination of precursor-based synthesis and high-pressure crystallization could be very productive in synthesis of such nitrogen-rich phases.

Effect of hydrostatic and chemical pressure on the exchange interaction in magnetic borocarbide superconductors

Science.gov (United States)

Michor, H.; El-Hagary, M.; Naber, L.; Bauer, E.; Hilscher, G.

2000-03-01

The investigation of pair-breaking effects in magnetic rare-earth nickel borocarbide superconductors reveals a considerable increase of the magnetic exchange integral Jsf by hydrostatic as well as chemical pressure. In both, Jsf is governed by the R-C distance (or lattice constant a) and is described quantitatively by a simple phenomenological model. Thereby, just two parameters Jsf0=31 meV and ΔJsf/Δa=165 meV/Å explain well the influence of chemical pressure upon the initial depression rates of Tc in solid solutions R'1-xRxNi2B2C with R=Gd, Tb, Dy, Ho and R'=Y and Lu.

Binary and ternary carbides and nitrides of the transition metals and their phase relations

International Nuclear Information System (INIS)

Holleck, H.

1981-01-01

The occurrance and the structure of the binary and ternary transition metal carbides and nitrides are described. Phase diagrams are assessed for most of the binary and ternary systems. Many ternary phase diagrams are published in this report for the first time. (orig.) [de

Extreme conditions synthesis, processing and characterization of metal-nitrides and alloys of mechanical and optoelectronic importance

International Nuclear Information System (INIS)

Serghiou, G; McGaff, A J; Russell, N; Morniroli, J P; Frost, D J; Odling, N; Boehler, R; Troadec, D; Lathe, C

2010-01-01

High density nitrides and group IV alloys are of growing importance for both ceramic and optoelectronic applications. We present here new data and processes in our ongoing preparation of alkaline earth and transition metal nitrides as well as group IV alloys, here, up to 25 GPa and 2300 K. We employ large volume and laser-heated diamond anvil cell techniques for synthesis, processing tools including focused ion beam, and synchrotron X-ray diffraction, transmission electron microscopy and scanning electron microscopy for characterization.

III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

KAUST Repository

Mishra, Pawan

2017-04-01

Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

Preparation and characteristics of various rare earth nitrides

International Nuclear Information System (INIS)

Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

2008-01-01

Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

The passivation of uranium metal surfaces by nitrogen bombardment - the formation of uranium nitride

International Nuclear Information System (INIS)

Allen, G.C.; Holmes, N.R.

1987-08-01

As part of a detailed investigation of the behaviour of metallic uranium in various atmospheres, we have examined the reaction between nitrogen gas and uranium metal. At room temperature there was no evidence of reaction between nitrogen gas and a clean metal surface; the only changes observed could be attributed to reaction between the metal and traces of oxygen (less than 0.1 ppm) in the nitrogen gas. Reaction between the metal and nitrogen was induced however by accelerating nitrogen towards the surface using a fast atom gun. The resulting nitrided surface was characterised by X-ray photoelectron spectroscopy, and its oxidation behaviour was monitored over an extended period in UHV and in air. (author)

The passivation of uranium metal surfaces by nitrogen bombardment - the formation of uranium nitride

International Nuclear Information System (INIS)

Allen, G.C.; Holmes, N.R.

1988-01-01

As part of a detailed investigation of the behaviour of metallic uranium in various atmospheres, we have examined the reaction between nitrogen gas and uranium metal. At room temperature there was no evidence of reaction between nitrogen gas and a clean metal surface; the only changes observed could be attributed to reaction between the metal and traces of oxygen (less than 0.1 ppm) in the nitrogen gas. Reaction between the metal and nitrogen was induced, however, by accelerating nitrogen towards the surface using a fast atom gun. The resulting nitrided surface was characterized by X-ray photoelectron spectroscopy, and its oxidation behaviour was monitored over an extended period in UHV and in air. (orig.)

Synchrotron radiation studies of local structure and bonding in transition metal aluminides and rare earth transition metal magnetic nitrides. Final report, August 1, 1990--July 14, 1993

International Nuclear Information System (INIS)

Budnick, J.I.; Pease, D.M.

1995-01-01

The following areas of study are reported on: bonding and near neighbor force constants in NiAl, CoAl, FeAl via temperature dependent EXAFS; alloys formed when Fe or Ga is microalloyed into a NiAl matrix; EXAFS studies of nitrided versus non nitrided Y 2 Fe 17 ; and transition metal x-ray spectra as related to magnetic moments

Tribocorrosion studies of metallic biomaterials: The effect of plasma nitriding and DLC surface modifications.

Science.gov (United States)

Zhao, Guo-Hua; Aune, Ragnhild E; Espallargas, Nuria

2016-10-01

The medical grade pure titanium, stainless steel and CoCrMo alloy have been utilized as biomaterials for load-bearing orthopedic prosthesis. The conventional surgery metals suffer from a combined effect of wear and corrosion once they are implanted, which may significantly accelerate the material degradation process. In this work, the tribocorrosion performance of the metallic biomaterials with different surface modifications was studied in the simulated body fluid for the purpose of investigating the effect of the surface treatments on the tribocorrosion performance and eventually finding the most suitable implantation materials. The metals were subjected to surface modifications by plasma nitriding in different treatment temperatures or physical vapor deposition (PVD) to produce diamond-like carbon (DLC) coating, respectively. The dry wear and tribocorrosion properties of the samples were evaluated by using a reciprocating ball-on-disc tribometer equipped with an electrochemical cell. Prior to the tribocorrosion tests, their electrochemical behavior was measured by the potentiodynamic polarization in phosphate buffer saline (PBS) solution at room temperature. Both stainless steel and CoCrMo after low temperature nitriding kept their passive nature by forming an expanded austenite phase. The DLC coated samples presented the low anodic corrosion current due to the chemical inertness of the carbon layer. During the tribocorrosion tests at open circuit potential, the untreated and low temperature nitrided samples exhibited significant potential drop towards the cathodic direction, which was a result of the worn out of the passive film. Galvanic coupling was established between the depassivated (worn) area and the still passive (unworn) area, making the materials suffered from wear-accelerated corrosion. The DLC coating performed as a solid lubricant in both dry wear and tribocorrosion tests, and the resulting wear after the tests was almost negligible. Copyright �

Synthesis of IV-VI Transition Metal Carbide and Nitride Nanoparticles Using a Reactive Mesoporous Template for Electrochemical Hydrogen Evolution Reaction

KAUST Repository

Alhajri, Nawal Saad

2016-01-01

Interstitial carbides and nitrides of early transition metals in Groups IV-VI exhibit platinum-like behavior which makes them a promising candidate to replace noble metals in a wide variety of reactions. Most synthetic methods used to prepare

Process for producing ceramic nitrides anc carbonitrides and their precursors

Science.gov (United States)

Brown, G.M.; Maya, L.

1987-02-25

A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

Leachability of nitrided ilmenite in hydrochloric acid

OpenAIRE

Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

2011-01-01

Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

The passivation of uranium metal surfaces by nitrogen bombardment — the formation of uranium nitride

Science.gov (United States)

Allen, Geoffrey C.; Holmes, Nigel R.

1988-05-01

As part of a detailed investigation of the behaviour of metallic uranium in various atmospheres, we have examined the reaction between nitrogen gas and uranium metal. At room temperature there was no evidence of reaction between nitrogen gas and a clean metal surface; the only changes observed could be attributed to reaction between the metal and traces of oxygen (less than 0.1 ppm) in the nitrogen gas. Reaction between the metal and nitrogen was induced, however, by accelerating nitrogen towards the surface using a fast atom gun. The resulting nitrided surface was characterized by X-ray photoelectron spectroscopy, and its oxidation behaviour was monitored over an extended period in UHV and in air.

Synthesis of Binary Transition Metal Nitrides, Carbides and Borides from the Elements in the Laser-Heated Diamond Anvil Cell and Their Structure-Property Relations

Directory of Open Access Journals (Sweden)

Lkhamsuren Bayarjargal

2011-09-01

Full Text Available Transition metal nitrides, carbides and borides have a high potential for industrial applications as they not only have a high melting point but are generally harder and less compressible than the pure metals. Here we summarize recent advances in the synthesis of binary transition metal nitrides, carbides and borides focusing on the reaction of the elements at extreme conditions generated within the laser-heated diamond anvil cell. The current knowledge of their structures and high-pressure properties like high-(p; T stability, compressibility and hardness is described as obtained from experiments.

Synthesis of Binary Transition Metal Nitrides, Carbides and Borides from the Elements in the Laser-Heated Diamond Anvil Cell and Their Structure-Property Relations

Science.gov (United States)

Friedrich, Alexandra; Winkler, Björn; Juarez-Arellano, Erick A.; Bayarjargal, Lkhamsuren

2011-01-01

Transition metal nitrides, carbides and borides have a high potential for industrial applications as they not only have a high melting point but are generally harder and less compressible than the pure metals. Here we summarize recent advances in the synthesis of binary transition metal nitrides, carbides and borides focusing on the reaction of the elements at extreme conditions generated within the laser-heated diamond anvil cell. The current knowledge of their structures and high-pressure properties like high-(p,T) stability, compressibility and hardness is described as obtained from experiments. PMID:28824101

Synthesis of metal free ultrathin graphitic carbon nitride sheet for photocatalytic dye degradation of Rhodamine B under visible light irradiation

Science.gov (United States)

Rahman, Shakeelur; Momin, Bilal; Higgins M., W.; Annapure, Uday S.; Jha, Neetu

2018-04-01

In recent times, low cost and metal free photocatalyts driven under visible light have attracted a lot of interest. One such photo catalyst researched extensively is bulk graphitic carbon nitride sheets. But the low surface area and weak mobility of photo generated electrons limits its photocatalytic performance in the visible light spectrum. Here we present the facile synthesis of ultrathin graphitic carbon nitride using a cost effective melamine precursor and its application in highly efficient photocatalytic dye degradation of Rhodamine B molecules. Compared to bulk graphitic carbon nitride, the synthesized ultrathin graphitic carbon nitride shows an increase in surface area, a a decrease in optical band gap and effective photogenerated charge separation which facilitates the harvest of visible light irradiation. Due to these optimal properties of ultrathin graphitic carbon nitride, it shows excellent photocatalytic activity with photocatalytic degradation of about 95% rhodamine B molecules in 1 hour.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Metal nitride cluster as a template to tune the electronic and magnetic properties of rare-earth metal containing endohedral fullerenes

International Nuclear Information System (INIS)

Zhang, Yang

2013-01-01

Rare-earth metal containing endohedral fullerenes have attracted much attention due to the feasibility of encaging metal atom, atoms or cluster inside of carbon cages. By switching the metal atom or cluster entrapped inside of the carbon cage the physical and chemical properties of the fullerene compounds can be tuned. The understanding of magnetic and electrochemical properties of endohedral fullerenes plays an essential role in fundamental scientific researches and potential applications in materials science. In this thesis, synthesizing novel rare-earth metal containing endohedral fullerene structures, studying the properties of these isolated endohedral fullerenes and the strategies of tuning the electronic and magnetic properties of endohedral fullerenes were introduced. The DC-arc discharging synthesis of different lanthanide metal-based (Ho, Ce and Pr) mixed metal nitride clusterfullerenes was achieved. Those rare-earth metal containing endohedral fullerenes were isolated by multi-step HPLC. The isolated samples were characterized by spectroscopic techniques included UV-vis-NIR, FTIR, Raman, LDI-TOF mass spectrometry, NMR and electrochemistry. The Ho-based mixed metal nitride clusterfullerenes Ho x M 3-x N rate at C 80 (M= Sc, Lu, Y; x=1, 2) were synthesized by ''reactive gas atmosphere'' method or ''selective organic solid'' route. The isolated samples were characterized by LDI-TOF mass spectrometry, UV-vis-NIR, FTIR, Raman and NMR spectroscopy. The 13 C NMR spectroscopic studies demonstrated exceptional NMR behaviors that resulted from switching the second metal inside of the mixed metal nitride cluster Ho x M 3-x N from Sc to Lu and further to Y. The LnSc 2 N rate at C 80 (Ln= Ce, Pr, Nd, Tb, Dy, Ho, Lu) MMNCFs were characterized by 13 C and 45 Sc NMR study respectively. According to Bleaney's theory and Reilley method, the separation of δ PC and δ con from δ para was achieved by the primary 13 C and 45 Sc NMR analysis of LnSc 2 N rate at C 80 (I). The

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Energy Technology Data Exchange (ETDEWEB)

An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2009-07-31

We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

Effect of alloying on elastic properties of ZrN based transition metal nitride alloys

KAUST Repository

Kanoun, Mohammed; Goumri-Said, Souraya

2014-01-01

We report the effect of composition and metal sublattice substitutional element on the structural, elastic and electronic properties of ternary transition metal nitrides Zr1-xMxN with M=Al, Ti, Hf, V, Nb, W and Mo. The analysis of the elastic constants, bulk modulus, shear modulus, Young's modulus, and Poisson's ratio provides insights regarding the mechanical behavior of Zr1-xMxN. We predict that ternary alloys are more ductile compared to their parent binary compounds. The revealed trend in the mechanical behavior might help for experimentalists on the ability of tuning the mechanical properties during the alloying process by varying the concentration of the transition metal. © 2014 Elsevier B.V.

Effect of alloying on elastic properties of ZrN based transition metal nitride alloys

KAUST Repository

Kanoun, Mohammed

2014-09-01

We report the effect of composition and metal sublattice substitutional element on the structural, elastic and electronic properties of ternary transition metal nitrides Zr1-xMxN with M=Al, Ti, Hf, V, Nb, W and Mo. The analysis of the elastic constants, bulk modulus, shear modulus, Young\\'s modulus, and Poisson\\'s ratio provides insights regarding the mechanical behavior of Zr1-xMxN. We predict that ternary alloys are more ductile compared to their parent binary compounds. The revealed trend in the mechanical behavior might help for experimentalists on the ability of tuning the mechanical properties during the alloying process by varying the concentration of the transition metal. © 2014 Elsevier B.V.

Isolation and characterization of a uranium(VI)-nitride triple bond

Science.gov (United States)

King, David M.; Tuna, Floriana; McInnes, Eric J. L.; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T.

2013-06-01

The nature and extent of covalency in uranium bonding is still unclear compared with that of transition metals, and there is great interest in studying uranium-ligand multiple bonds. Although U=O and U=NR double bonds (where R is an alkyl group) are well-known analogues to transition-metal oxo and imido complexes, the uranium(VI)-nitride triple bond has long remained a synthetic target in actinide chemistry. Here, we report the preparation of a uranium(VI)-nitride triple bond. We highlight the importance of (1) ancillary ligand design, (2) employing mild redox reactions instead of harsh photochemical methods that decompose transiently formed uranium(VI) nitrides, (3) an electrostatically stabilizing sodium ion during nitride installation, (4) selecting the right sodium sequestering reagent, (5) inner versus outer sphere oxidation and (6) stability with respect to the uranium oxidation state. Computational analyses suggest covalent contributions to U≡N triple bonds that are surprisingly comparable to those of their group 6 transition-metal nitride counterparts.

Thermionic field emission in gold nitride Schottky nanodiodes

Science.gov (United States)

Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

2012-11-01

We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

Evidence of multiband superconductivity in the quaternary borocarbide superconductor YNi2B2C using directional point-contact spectroscopy

International Nuclear Information System (INIS)

Raychaudhuri, Pratap; Sheet, Goutam; Mukhopadhyay, Sourin; Takeya, H.

2007-01-01

In this paper, we review our recent investigations on the gap anisotropy of the quaternary borocarbide superconductor YNi 2 B 2 C using directional point-contact spectroscopy. Through a detailed study of the temperature and magnetic field dependence of the superconducting energy gaps we show that the gap anisotropy in this material originates from electrons on different Fermi sheets having very different Fermi velocities. The gap anisotropy in this material is therefore well explained through a multiband scenario where electrons in different k-directions have very different electron-phonon coupling strength

Metal nitride cluster as a template to tune the electronic and magnetic properties of rare-earth metal containing endohedral fullerenes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yang

2013-10-16

Rare-earth metal containing endohedral fullerenes have attracted much attention due to the feasibility of encaging metal atom, atoms or cluster inside of carbon cages. By switching the metal atom or cluster entrapped inside of the carbon cage the physical and chemical properties of the fullerene compounds can be tuned. The understanding of magnetic and electrochemical properties of endohedral fullerenes plays an essential role in fundamental scientific researches and potential applications in materials science. In this thesis, synthesizing novel rare-earth metal containing endohedral fullerene structures, studying the properties of these isolated endohedral fullerenes and the strategies of tuning the electronic and magnetic properties of endohedral fullerenes were introduced. The DC-arc discharging synthesis of different lanthanide metal-based (Ho, Ce and Pr) mixed metal nitride clusterfullerenes was achieved. Those rare-earth metal containing endohedral fullerenes were isolated by multi-step HPLC. The isolated samples were characterized by spectroscopic techniques included UV-vis-NIR, FTIR, Raman, LDI-TOF mass spectrometry, NMR and electrochemistry. The Ho-based mixed metal nitride clusterfullerenes Ho{sub x}M{sub 3-x}N rate at C{sub 80} (M= Sc, Lu, Y; x=1, 2) were synthesized by ''reactive gas atmosphere'' method or ''selective organic solid'' route. The isolated samples were characterized by LDI-TOF mass spectrometry, UV-vis-NIR, FTIR, Raman and NMR spectroscopy. The {sup 13}C NMR spectroscopic studies demonstrated exceptional NMR behaviors that resulted from switching the second metal inside of the mixed metal nitride cluster Ho{sub x}M{sub 3-x}N from Sc to Lu and further to Y. The LnSc{sub 2}N rate at C{sub 80} (Ln= Ce, Pr, Nd, Tb, Dy, Ho, Lu) MMNCFs were characterized by {sup 13}C and {sup 45}Sc NMR study respectively. According to Bleaney's theory and Reilley method, the separation of δ{sup PC} and δ{sup con

Synthesis of hexagonal boron nitride with the presence of representative metals

Energy Technology Data Exchange (ETDEWEB)

Budak, Erhan, E-mail: erhan@ibu.edu.t [Department of Chemistry, Faculty of Art and Science, Abant Izzet Baysal University, Bolu 14280 (Turkey); Bozkurt, Cetin [Department of Chemistry, Faculty of Art and Science, Abant Izzet Baysal University, Bolu 14280 (Turkey)

2010-11-15

Hexagonal boron nitride (h-BN) samples were prepared using the modified O'Connor method with KNO{sub 3} and Ca(NO{sub 3}){sub 2} at different temperatures (1050, 1250, and 1450 deg. C). The samples were characterized by FTIR, XRD, and SEM techniques. Usage of representative metals exhibited a positive effect on the crystallization of h-BN and they caused the formation of nano-scale products at relatively low temperature. XRD results indicated that there was an increase in interlayer spacing due to the d-{pi} interaction. The calculated lattice constants were very close to the reported value for h-BN.

Method of activating an article of passive ferrous or non-ferrous metal prior to carburising, nitriding and /or nitrocarburising

DEFF Research Database (Denmark)

2011-01-01

Source: US2012111456A A method of activating an article of passive ferrous or non-ferrous metal by heating at least one compound containing nitrogen and carbon, wherein the article is treated with gaseous species derived from the compound. The activated article can be subsequently carburised......, nitrided or nitrocarburised in shorter time at lower temperature and resulting superior mechanical properties compared with non-activated articles and even articles of stainless steel, nickel alloy, cobalt alloy or titanium based material can be carburised, nitrided or nitrocarburised....

Review on Superconducting Materials

OpenAIRE

Hott, Roland; Kleiner, Reinhold; Wolf, Thomas; Zwicknagl, Gertrud

2013-01-01

Short review of the topical comprehension of the superconductor materials classes Cuprate High-Temperature Superconductors, other oxide superconductors, Iron-based Superconductors, Heavy-Fermion Superconductors, Nitride Superconductors, Organic and other Carbon-based Superconductors and Boride and Borocarbide Superconductors, featuring their present theoretical understanding and their aspects with respect to technical applications.

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

Science.gov (United States)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Nitriding behavior of Ni and Ni-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Fonovic, Matej

2015-01-15

Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

Small angle neutron scattering studies of the flux line lattices in the borocarbide superconductors

International Nuclear Information System (INIS)

Eskildsen, Morten Ring

1998-12-01

This thesis describes small angle neutron scattering studies of the flux line lattice (FLL) in the following members of the borocarbide superconductors: YNi 2 B 2 C, ErNi 2 B 2 C, TmNi 2 B 2 C, LuNi 2 B 2 C, Y 0.75 Lu 0.25 Ni 2 B 2 C and Lu(Ni 1-x CO x ) 2 B 2 C with x = 1.5 - 9%. Of the materials ErN 2 B 2 C and TmNi 2 B 2 C exhibits coexisting superconductivity and magnetic ordering. Three main conclusions can be derived from the results in this thesis. Existence of a low field hexagonal to square symmetry transition of the FLL, ubiquitous to the superconducting borocarbides, magnetic and non-magnetic alike. This symmetry transition is due to the four-fold anisotropy of the Fermi surface, distorting the screening currents towards a square flow pattern. This four-fold anisotropy together with non-local electrodynamics induces a transition to a square FLL, as the field is increased. Changing the non-locality range shifts the square to hexagonal transition onset field. A static disordering of the FLL in YNi 2 B 2 C and LuNi 2 B 2 C. In these materials one observes a well ordered FLL, with a longitudinal correlation length exceeding 100 flux line spacings. As the applied field is increased the longitudinal correlation length, increases with field up to H/H c2 ∼ 0.2. Above this field the FLL correlation length slowly starts to fall off, in contradiction to theoretical models. The existence of complex interactions between the magnetic state and the FLL in TmNi 2 B 2 C. This is signalled by coinciding changes in the FLL symmetry and in the magnetic structure. The FLL show a two-step symmetry transition from square to rhombic and then hexagonal with increased field. In addition, the FLL reflectivity shows distinct peaks as the thulium ions orders magnetically at T N and across the field driven magnetic transition. No explanation for this behaviour exists at the present. (au)

2D metal carbides and nitrides (MXenes) for energy storage

KAUST Repository

Anasori, Babak; Lukatskaya, Maria R.; Gogotsi, Yury

2017-01-01

The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

2D metal carbides and nitrides (MXenes) for energy storage

KAUST Repository

Anasori, Babak

2017-01-17

The family of 2D transition metal carbides, carbonitrides and nitrides (collectively referred to as MXenes) has expanded rapidly since the discovery of Ti3C2 in 2011. The materials reported so far always have surface terminations, such as hydroxyl, oxygen or fluorine, which impart hydrophilicity to their surfaces. About 20 different MXenes have been synthesized, and the structures and properties of dozens more have been theoretically predicted. The availability of solid solutions, the control of surface terminations and a recent discovery of multi-transition-metal layered MXenes offer the potential for synthesis of many new structures. The versatile chemistry of MXenes allows the tuning of properties for applications including energy storage, electromagnetic interference shielding, reinforcement for composites, water purification, gas- and biosensors, lubrication, and photo-, electro- and chemical catalysis. Attractive electronic, optical, plasmonic and thermoelectric properties have also been shown. In this Review, we present the synthesis, structure and properties of MXenes, as well as their energy storage and related applications, and an outlook for future research.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Plasmonic spectral tunability of conductive ternary nitrides

Energy Technology Data Exchange (ETDEWEB)

Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

2016-06-27

Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

Exploring electrolyte preference of vanadium nitride supercapacitor electrodes

Energy Technology Data Exchange (ETDEWEB)

Wang, Bo; Chen, Zhaohui; Lu, Gang [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Wang, Tianhu [School of Electrical Information and Engineering, Jiangsu University of Technology, Changzhou 213001 (China); Ge, Yunwang, E-mail: ywgelit@126.com [Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023 (China)

2016-04-15

Highlights: • Hierarchical VN nanostructures were prepared on graphite foam. • Electrolyte preference of VN supercapacitor electrodes was explored. • VN showed better capacitive property in organic and alkaline electrolytes than LiCl. - Abstract: Vanadium nitride hierarchical nanostructures were prepared through an ammonia annealing procedure utilizing vanadium pentoxide nanostructures grown on graphite foam. The electrochemical properties of hierarchical vanadium nitride was tested in aqueous and organic electrolytes. As a result, the vanadium nitride showed better capacitive energy storage property in organic and alkaline electrolytes. This work provides insight into the charge storage process of vanadium nitride and our findings can shed light on other transition metal nitride-based electrochemical energy storage systems.

The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

2015-08-15

Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

Safety performance comparation of MOX, nitride and metallic fuel based 25-100 MWe Pb-Bi cooled long life fast reactors without on-site refuelling

International Nuclear Information System (INIS)

Su'ud, Zaki

2008-01-01

In this paper the safety performance of 25-100 MWe Pb-Bi cooled long life fast reactors based on three types of fuels: MOX, nitride and metal is compared and discussed. In the fourth generation NPP paradigm, especially for Pb-Bi cooled fast reactors, inherent safety capability is necessary against some standard accidents such as unprotected loss of flow (ULOF), unprotected rod run-out transient over power (UTOP), unprotected loss of heat sink (ULOHS). Selection of fuel type will have important impact on the overall system safety performance. The results of safety analysis of long life Pb-Bi cooled fast reactors without on-site fuelling using nitride, MOX and metal fuel have been performed. The reactors show the inherent safety pattern with enough safety margins during ULOF and UTOP accidents. For MOX fuelled reactors, ULOF accident is more severe than UTOP accident while for nitride fuelled cores UTOP accident may push power much higher than that comparable MOX fuelled cores. (author)

Effect of functionalization of boron nitride flakes by main group metal clusters on their optoelectronic properties

Science.gov (United States)

Chakraborty, Debdutta; Chattaraj, Pratim Kumar

2017-10-01

The possibility of functionalizing boron nitride flakes (BNFs) with some selected main group metal clusters, viz. OLi4, NLi5, CLi6, BLI7 and Al12Be, has been analyzed with the aid of density functional theory (DFT) based computations. Thermochemical as well as energetic considerations suggest that all the metal clusters interact with the BNF moiety in a favorable fashion. As a result of functionalization, the static (first) hyperpolarizability (β ) values of the metal cluster supported BNF moieties increase quite significantly as compared to that in the case of pristine BNF. Time dependent DFT analysis reveals that the metal clusters can lower the transition energies associated with the dominant electronic transitions quite significantly thereby enabling the metal cluster supported BNF moieties to exhibit significant non-linear optical activity. Moreover, the studied systems demonstrate broad band absorption capability spanning the UV-visible as well as infra-red domains. Energy decomposition analysis reveals that the electrostatic interactions principally stabilize the metal cluster supported BNF moieties.

Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

Science.gov (United States)

Brady, Michael P [Oak Ridge, TN; Yang, Bing [Oak Ridge, TN; Maziasz, Philip J [Oak Ridge, TN

2010-11-09

A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

Bone response to a titanium aluminium nitride coating on metallic implants.

Science.gov (United States)

Freeman, C O; Brook, I M

2006-05-01

The design, surface characteristics and strength of metallic implants are dependant on their intended use and clinical application. Surface modifications of materials may enable reduction of the time taken for osseointegration and improve the biological response of bio-mechanically favourable metals and alloys. The influence of a titanium aluminium nitride (TAN) coating on the response of bone to commercially pure titanium and austenitic 18/8 stainless steel wire is reported. TAN coated and plain rods of stainless steel and commercially pure titanium were implanted into the mid-shaft of the femur of Wistar rats. The femurs were harvested at four weeks and processed for scanning electron and light microscopy. All implants exhibited a favourable response in bone with no evidence of fibrous encapsulation. There was no significant difference in the amount of new bone formed around the different rods (osseoconduction), however, there was a greater degree of shrinkage separation of bone from the coated rods than from the plain rods (p = 0.017 stainless steel and p = 0.0085 titanium). TAN coating may result in reduced osseointegration between bone and implant.

Synthesis, reactivity, and electronic structure of molecular uranium nitrides

OpenAIRE

Cleaves, Peter A.

2016-01-01

The study of metal-ligand multiple bonding offers insight into the electronic structure and bond of metal systems. Until recently, for uranium, such systems were limited to uranyl, and terminal chalcogenide, imide and carbene complexes. In 2012, this was extended to nitrides with the first preparation of a uranium–nitride (U≡N) species isolable under standard conditions, namely [U(TrenTIPS)(N)][Na(12C4)2] (52), which is prepared by the two-electron reduction of sodium azide with a trivalent u...

Small angle neutron scattering studies of the flux line lattices in the borocarbide superconductors

Energy Technology Data Exchange (ETDEWEB)

Eskildsen, Morten Ring

1998-12-01

This thesis describes small angle neutron scattering studies of the flux line lattice (FLL) in the following members of the borocarbide superconductors: YNi{sub 2}B{sub 2}C, ErNi{sub 2}B{sub 2}C, TmNi{sub 2}B{sub 2}C, LuNi{sub 2}B{sub 2}C, Y{sub 0.75}Lu{sub 0.25}Ni{sub 2}B{sub 2}C and Lu(Ni{sub 1-x}CO{sub x}){sub 2}B{sub 2}C with x = 1.5 - 9%. Of the materials ErN{sub 2}B{sub 2}C and TmNi{sub 2}B{sub 2}C exhibits coexisting superconductivity and magnetic ordering. Three main conclusions can be derived from the results in this thesis. Existence of a low field hexagonal to square symmetry transition of the FLL, ubiquitous to the superconducting borocarbides, magnetic and non-magnetic alike. This symmetry transition is due to the four-fold anisotropy of the Fermi surface, distorting the screening currents towards a square flow pattern. This four-fold anisotropy together with non-local electrodynamics induces a transition to a square FLL, as the field is increased. Changing the non-locality range shifts the square to hexagonal transition onset field. A static disordering of the FLL in YNi{sub 2}B{sub 2}C and LuNi{sub 2}B{sub 2}C. In these materials one observes a well ordered FLL, with a longitudinal correlation length exceeding 100 flux line spacings. As the applied field is increased the longitudinal correlation length, increases with field up to H/H{sub c2} {approx} 0.2. Above this field the FLL correlation length slowly starts to fall off, in contradiction to theoretical models. The existence of complex interactions between the magnetic state and the FLL in TmNi{sub 2}B{sub 2}C. This is signalled by coinciding changes in the FLL symmetry and in the magnetic structure. The FLL show a two-step symmetry transition from square to rhombic and then hexagonal with increased field. In addition, the FLL reflectivity shows distinct peaks as the thulium ions orders magnetically at T{sub N} and across the field driven magnetic transition. No explanation for this behaviour

Effect of ion nitridation process on hardness and the corrosion resistance of biomaterials

International Nuclear Information System (INIS)

Wirjoadi; Lely Susita; Bambang Siswanto; Sudjatmoko

2012-01-01

Ion nitriding process has been performed on metal biomaterials to improve their mechanical properties of materials, particularly to increase hardness and corrosion resistance. This metallic biomaterials used for artificial bone or a prosthetic graft and used as devices of orthopedic biomaterials are usually of 316L SS metal-type and Ti-6Al-4V alloy. The purpose of this study is to research the development and utilization of ion nitridation method in order to get iron and titanium nitride thin films on the metallic biomaterials for artificial bone that has wear resistance and corrosion resistance is better. Microhardness of the samples was measured using a microhardness tester, optimum hardness of SS 316L samples are about 582 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.6 mbar, while optimum hardness of Ti-6Al-4V alloy is 764 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 4 hours and the nitrogen gas pressure of 1.6 mbar. The hardness value of SS 316L sample and Ti-6Al-4V alloy increase to 143% and 153%, if compared with standard samples. The optimum corrosion resistance at temperature of 350 °C for SS 316L and Ti-6Al-4V are 260,12 and 110,49 μA/cm 2 or corrosion rate are 29,866 and 15,189 mpy, respectively. (author)

Electronic structure and mechanical properties of plasma nitrided ferrous alloys

Energy Technology Data Exchange (ETDEWEB)

Portolan, E. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Baumvol, I.J.R. [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre 91509-970 (Brazil); Figueroa, C.A., E-mail: cafiguer@ucs.br [Centro de Ciencias Exatas e Tecnologia, Universidade de Caxias do Sul, 95070-560 Caxias do Sul-RS (Brazil)

2009-04-15

The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p{sub 3/2} photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN{sub x}). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

Electronic structure and mechanical properties of plasma nitrided ferrous alloys

Science.gov (United States)

Portolan, E.; Baumvol, I. J. R.; Figueroa, C. A.

2009-04-01

The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

Electronic structure and mechanical properties of plasma nitrided ferrous alloys

International Nuclear Information System (INIS)

Portolan, E.; Baumvol, I.J.R.; Figueroa, C.A.

2009-01-01

The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x ). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

Characterization of plasma nitrided layers produced on sintered iron

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Marcos Alves Fontes

2014-07-01

Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

From melamine sponge towards 3D sulfur-doping carbon nitride as metal-free electrocatalysts for oxygen reduction reaction

Science.gov (United States)

Xu, Jingjing; Li, Bin; Li, Songmei; Liu, Jianhua

2017-07-01

Development of new and efficient metal-free electrocatalysts for replacing Pt to improve the sluggish kinetics of oxygen reduction reaction (ORR) is of great importance to emerging renewable energy technologies such as metal-air batteries and polymer electrolyte fuel cells. Herein, 3D sulfur-doping carbon nitride (S-CN) as a novel metal-free ORR electrocatalyst was synthesized by exploiting commercial melamine sponge as raw material. The sulfur atoms were doping on CN networks uniformly through numerous S-C bonds which can provide additional active sites. And it was found that the S-CN exhibited high catalytic activity for ORR in term of more positive onset potential, higher electron transfer number and higher cathodic density. This work provides a novel choice of metal-free ORR electrocatalysts and highlights the importance of sulfur-doping CN in metal-free ORR electrocatalysts.

Different shape normal metal interlayers between niobium based SIS junctions and niobium titanium nitride leads and their influence on the electron temperature

International Nuclear Information System (INIS)

Selig, S; Westig, M P; Jacobs, K; Honingh, C E

2014-01-01

In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.

Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

International Nuclear Information System (INIS)

Shen Liru; Fu, Ricky K.Y.; Chu, Paul K.

2004-01-01

Aluminum nitride (AlN) is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 deg. C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas

Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal-organic molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Billingsley, Daniel; Pritchett, David; Henderson, Walter; Carver, Alexander G.; Burnham, Shawn D.; Doolittle, W.A. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)

2008-07-01

Molecular hydrogen (H{sub 2}) has been investigated as a means to improve ammonia nitridation efficiency and attempts to reduce carbon contamination in ammonia-based metal-organic molecular beam epitaxy (MOMBE). A 30% improvement in crystalline quality, inferred from XRD, as well as an increase in subsequent GaN bulk growth rate was observed when bare sapphire was subject to H{sub 2} annealing before nitridation. However, the use of H{sub 2} during GaN homoepitaxy on GaN templates resulted in increased carbon contamination and decreased growth rate of GaN. The results demonstrate promise and proper uses of H{sub 2} during GaN growth under certain conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Directory of Open Access Journals (Sweden)

Isabelle Jauberteau

2015-10-01

Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

Quaternary borocarbides: New class of intermetallic superconductors

Science.gov (United States)

Nagarajan, R.; Gupta, L. C.; Dhar, S. K.; Mazumdar, Chandan; Hossain, Zakir; Godart, C.; Levy-Clement, C.; Padalia, B. D.; Vijayaraghavan, R.

1995-01-01

Our recent discovery of superconductivity (SC) in the four-element multiphase Y-Ni-B-C system at an elevated temperature (TC approximately 12 K) has opened up great possibilities of identifying new superconducting materials and generating new physics. Superconductivity with Tc (greater than 20 K) higher than that known so far in bulk intermetallics has been observed in multiphase Y-Pd-B-C and Th-Pd-B-C systems and a family of single phase materials RENi2B2C (RE= Y, rare earth) have been found. Our investigations show YNi2B2C to be a strong coupling hard type-II SC. HC2(T) exhibits an unconventional temperature dependence. Specific heat and magnetization studies reveal coexistence of SC and magnetism in RNi2B2C (R = Ho, Er, Tm) with magnetic ordering temperatures (Tc approximately 8 K, 10.5 K, 11 K and Tm approximately 5 K, approximately 7K, approximately 4 K respectively) that are remarkably higher than those in known magnetic superconductors . Mu-SR studies suggest the possibility of Ni atoms carrying a moment in TmNi2B2C. Resistivity results suggests a double re-entrant transition (SC-normal-SC) in HoNi2B2C. RENi2B2C (RE = Ce, Nd, Gd) do not show SC down to 4.2 K. The Nd- and Gd-compounds order magnetically at approximately 4.5 K and approximately 19.5 K, respectively. Two SC transitions are observed in Y-Pd-B-C (Tc approximately 22 K, approximately 10 K) and in Th-Pd-B-C (Tc approximately 20 K, approximately 14 K) systems, which indicate that there are at least two structures which support SC in these borocarbides. In our multiphase ThNi2B2C we observe SC at approximately 6 K. No SC was seen in multiphase UNi2B2C, UPd2B2C, UOs2Ge2C and UPd5B3C(0.35) down to 4.2 K. Tc in YNi2B2C is depressed by substitutions (Gd, Th and U at Y-sites and Fe, Co at Ni-sites).

Study on the nitride fuel fabrication for FBR cycle (1)

International Nuclear Information System (INIS)

Shinkai, Yasuo; Ono, Kiyoshi; Tanaka, Kenya

2002-07-01

In the phase-II of JNC's 'Feasibility Study on Commercialized Fuel Reactor Cycle System (the F/S)', the nitride fuels are selected as candidate for fuels for heavy metal cooled reactor, gas cooled reactor, and small scale reactor. In particular, the coated fuel particles are a promising concept for gas cooled reactor. In addition, it is necessary to study in detail the application possibility of pellet nitride fuel and vibration compaction nitride fuel for heavy metal cooled reactor and small scale reactor in the phase-II. In 2001, we studied more about additional equipments for the nitride fuel fabrication in processes from gelation to carbothermic reduction in the vibration compaction method. The result of reevaluation of off-gas mass flow around carbothermic reduction equipment in the palletizing method, showed that quantity of off-gas flow reduced and its reduction led the operation cost to decrease. We studied the possibility of fabrication of large size particles in the coated fuel particles for helium gas cooled reactor and we made basic technical issues clear. (author)

Hardness of carbides, nitrides, and borides

International Nuclear Information System (INIS)

Schroeter, W.

1981-01-01

Intermetallic compounds of metals with non-metals such as C, N, and B show different hardness. Wagner's interaction parameter characterizes manner and extent of the interaction between the atoms of the substance dissolved and the additional elements in metallic mixed phases. An attempt has been made to correlate the hardness of carbides, nitrides, and borides (data taken from literature) with certain interaction parameters and associated thermodynamic quantities (ΔH, ΔG). For some metals of periods 4, 5, and 6 corresponding relations were found between microhardness, interaction parameters, heat of formation, and atomic number

Fabrication of aluminum nitride crucibles for molten salt and plutonium compatibility studies

International Nuclear Information System (INIS)

Phillips, J.A.

1991-01-01

The overall objective of this research was to fabricate a calcium oxide sinter-aided aluminum nitride crucible and determine the compatibility of this crucible with molten chloride salts and plutonium metal in the DOR process. Calcium oxide sinter-aided aluminum nitride was preferred over yttrium oxide sinter-aided aluminum nitride because of (1) the presence of calcium chloride, calcium oxide, and calcium metal in the molten salts utilized in the DOR process, and (2) the higher volatility of the secondary phases formed compared with phases resulting from the addition of yttrium oxide during the aluminum nitride sintering process. The calcium oxide system may yield a higher purity crystal structure with fewer secondary phases present than in the yttrium oxide system. The secondary phases that are present in the grain boundaries may be unreactive with the calcium chloride salt due to the presence of calcium in the secondary phases

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

Directory of Open Access Journals (Sweden)

Yoshihiro Irokawa

2011-01-01

Full Text Available In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations.

Thermal expansion of superconducting fulleride and borocarbide compounds

International Nuclear Information System (INIS)

Burkhart, G.J.

1995-08-01

In order to detact and analyze thermodynamic phase transitions, the investigation of the thermal expansion via capacitance dilatometry is a powerful experimental technique, due to the extremely high resolution (ΔL/L∝10 -8 -10 -10 ). With respect to the air sensitivity of the fullerides a dilatometer operating under inert atmosphere was designed and the thermal expansion of polycrystalline fulleride (Rb 3 C 60 , K 3 C 60 ) and borocarbide (YNi 2 B 2 C, LuNi 2 B 2 C) compounds was determined in the temperature range 5-320 K. Most effort was focused on a quantitative evaluation of the discontinuity in the thermal expansivity α at the superconducting transition. The results are discussed in the context of the Ehrenfest relation, which connects the jump in the thermal expansivity Δα with the pressure dependence of the superconducting transition temperature dT c /dp and the jump in the specific heat Δc p /T c at the superconducting transition. For Rb 3 C 60 and K 3 C 60 the jump in the specific heat can be derived via the Ehrenfest relation using the results of the thermal expansion measurements and the well-known pressure dependence of the superconducting transition temperature. The derived values for Rb 3 C 60 and K 3 Cu 60 are Δc p /T c ∝75mJ/molK 2 and Δc p /T c ∝64 mJ.molK 2 , respectively. The directly measured specific heat jump of K 3 C 60 gives approximately the same value of Δc p /T c , and, therefore, the use of the Ehrenfest relation on fullerides is justified. The specific heat jumps Δc p /T c , determined from theoretically derived values of the density of states at the Fermi level N(E F ) and the McMillan-parameter λ, exceed the experimental results by a factor of 1.5-2. This finding reflects the uncertainty concerning the superconducting parameters N(E F ) and λ. (orig.)

Estimation of sensing characteristics for refractory nitrides based gain assisted core-shell plasmonic nanoparticles

Science.gov (United States)

Shishodia, Manmohan Singh; Pathania, Pankaj

2018-04-01

Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.

Preparation of phosphorus targets using the compound phosphorus nitride

International Nuclear Information System (INIS)

Maier-Komor, P.

1987-01-01

Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

Transition metal (TM) nitrides, due to their unique combination of remarkable physical properties and simple NaCl structure, are presently utilized in a broad range of applications and as model systems in the investigation of complex phenomena. Group-IVB nitrides TiN, ZrN, and HfN have transport properties which include superconductivity and high electrical conductivity; consequentially, they have become technologically important as electrodes and contacts in the semiconducting and superconducting industries. The Group-VB nitride VN, which exhibits enhanced ductility, is a fundamental component in superhard and tough nanostructured hard coatings. In this thesis, I investigate the lattice dynamics responsible for controlling superconductivity and electrical conductivities in Group-IVB nitrides and elasticity and structural stability of the NaCl-structure Group-VB nitride VN. Our group has already synthesized high-quality epitaxial TiN, HfN, and CeN layers on MgO(001) substrates. By irradiating the growth surface with high ion fluxes at energies below the bulk lattice-atom displacement threshold, dense epitaxial single crystal TM nitride films with extremely smooth surfaces have been grown using ultra-high vacuum magnetically-unbalanced magnetron sputter deposition. Using this approach, I completed the Group-IVB nitride series by growing epitaxial ZrN/MgO(001) films and then grew Group-VB nitride VN films epitaxially on MgO(001), MgO(011), and MgO(111). The combination of high-resolution x-ray diffraction (XRD) reciprocal lattice maps (RLMs), high-resolution cross-sectional transmission electron microscopy (HR-XTEM), and selected-area electron diffraction (SAED) show that single-crystal stoichiometric ZrN films grown at 450 °C are epitaxially oriented cube-on-cube with respect to their MgO(001) substrates, (001) ZrN||(001)MgO and [100]ZrN||[100]MgO. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm. X-ray reflectivity results reveal that

First principles calculations of interstitial and lamellar rhenium nitrides

Energy Technology Data Exchange (ETDEWEB)

Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

First principles calculations of interstitial and lamellar rhenium nitrides

International Nuclear Information System (INIS)

Soto, G.; Tiznado, H.; Reyes, A.; Cruz, W. de la

2012-01-01

Highlights: ► The possible structures of rhenium nitride as a function of composition are analyzed. ► The alloying energy is favorable for rhenium nitride in lamellar arrangements. ► The structures produced by magnetron sputtering are metastable variations. ► The structures produced by high-pressure high-temperature are stable configurations. ► The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re 3 N and Re 2 N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials within binary nitride chemistry.

Conductive and robust nitride buffer layers on biaxially textured substrates

Science.gov (United States)

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Cr-doped III-V nitrides: Potential candidates for spintronics

KAUST Repository

Amin, Bin

2011-02-19

Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

Cr-doped III-V nitrides: Potential candidates for spintronics

KAUST Repository

Amin, Bin; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.

2011-01-01

Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

Uranium sesqui nitride synthesis and its use as catalyst for the thermo decomposition of ammonia

International Nuclear Information System (INIS)

Rocha, Soraya Maria Rizzo da

1996-01-01

The preoccupation to have a secure destination for metallic uranium scraps and wastes and to search new non-nuclear uses for the huge amount of depleted metal uranium accumulated at the nuclear industry encouraged the study of the uranium sesqui nitride synthesis and its use. The use of uranium sesqui nitride as a catalyst for the thermo decomposition of ammonia for the hydrogen production has enormous significance. One of the most important nuclear cycle step is the reduction of the higher uranium oxides for the production of uranium dioxide and its conversion to uranium tetrafluoride. The reduction of the UO 3 and U 3 O 8 oxides is accomplished by the gas-solid reaction with elementary hydrogen. For economical purposes and for the safety concern the nuclear industry prefers to manufacture the hydrogen gas at the local and at the moment of use, exploring the catalytic decomposition of ammonia vapor. Using metallic uranium scraps as the raw material the obtention of its nitride was achieved by the reaction with ammonia. The results of the chemical and physical characterization of the prepared uranium sesqui nitride and its behavior as a catalyst for the cracking of ammonia are commented. A lower ammonia cracking temperature (550 deg C) using the uranium sesqui nitride compared with recommended industrial catalysts iron nitride (650 deg C) and manganese nitride (700 deg C) sounds reliable and economically advantageous. (author)

Electrochemical Solution Growth of Magnetic Nitrides

Energy Technology Data Exchange (ETDEWEB)

Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

Metal-free hybrids of graphitic carbon nitride and nanodiamonds for photoelectrochemical and photocatalytic applications.

Science.gov (United States)

Zhou, Li; Zhang, Huayang; Guo, Xiaochen; Sun, Hongqi; Liu, Shaomin; Tade, Moses O; Wang, Shaobin

2017-05-01

Graphitic carbon nitride (g-C 3 N 4 ) has been considered as a metal-free, cost-effective, eco-friendly and efficient catalyst for various photoelectrochemical applications. However, compared to conventional metal-based photocatalysts, its photocatalytic activity is still low because of the low mobility of carriers restricted by the polymer nature. Herein, a series of hybrids of g-C 3 N 4 (GCN) and nanodiamonds (NDs) were synthesized using a solvothermal method. The photoelectrochemical performance and photocatalytic efficiency of the GCN/NDs were investigated by means of the generation of photocurrent and photodegradation of methylene blue (MB) solutions under UV-visible light irradiations. In this study, the sample of GCN/ND-33% derived from 0.1g GCN and 0.05g NDs displayed the highest photocatalytic activity and the strongest photocurrent density. The mechanism of enhanced photoelectrochemical and photocatalytic performances was also discussed. Copyright © 2017 Elsevier Inc. All rights reserved.

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

Energy Technology Data Exchange (ETDEWEB)

Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

2008-01-01

Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Nested Fermi surfaces and order in the rare earth nickel borocarbides and copper palladium alloys

International Nuclear Information System (INIS)

Wilkinson, Ian

2002-01-01

The electronic structure of two systems, each displaying a different type of order believed to derive from their respective Fermi surface topologies, has been investigated using the two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. A particular topological feature of a generic rare earth nickel borocarbide (general formula RNi 2 B 2 C) Fermi surface is popularly believed to be responsible for a particular modulated arrangement of local moments observed in several magnetic borocarbides. Accordingly, c-axis 2D-ACAR spectra were collected from four representative members of the series, namely the Er, Tm, Yb and Lu compounds. A further a-axis projection from LuNi 2 B 2 C provides an additional comparison with electronic structure calculations performed for this compound. The c-axis projected k-space electron occupancies reveal a fundamentally similar Fermi surface topology across the measured compounds. The a- and c-axis k-space occupancies obtained from LuNi 2 B 2 C showed exceptional qualitative agreement with the corresponding calculated electron occupancy. A number of edge-detection methods were employed to identify the projected Fermi surface, and the existence of the proposed feature was confirmed by direct observation in each of the measured compounds. Calipers of this feature were found to be in good general agreement with those predicted by relevant calculation and expected from indirect experimental evidence. The compositional phase behaviour of copper-palladium solid solutions is believed to be strongly influenced by the shape of their respective Fermi surfaces. In particular, the concentration-dependent positions of diffuse peaks in electron and X-ray diffraction patterns from disordered samples has been associated with the corresponding evolution of flat, parallel areas on the alloy Fermi surface. Electronic structure calculations indicate these areas to be maximal around 40 at. % Pd, and it has been further suggested that

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

International Nuclear Information System (INIS)

Anselin, F.

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

Mechanical properties and electronic structure of anti-ReO3 structured cubic nitrides, M3N, of d block transition metals M: An ab initio study

International Nuclear Information System (INIS)

Zhou, Xiuquan; Gall, Daniel; Khare, Sanjay V.

2014-01-01

Highlights: • We use DFT to model the anti-ReO 3 structured transition metal nitrides M 3 N. • We predict their lattice constants, electronic structures and mechanical properties. • We correlate the metal d and nitrogen 2p orbitals with stability and hardness. • We established a high-throughput database for materials design. - Abstract: We report a systematic study of the anti-ReO 3 structured transition metal nitrides, M 3 N, using ab initio density functional theory computations in the local density approximation. Here M denotes all the 3d, 4d and 5d transition metals. Our calculations indicate that all M 3 N compounds except V 3 N of group 5 and Zn 3 N and Hg 3 N of group 12 are mechanically stable. For the stable M 3 N compounds, we report a database of predictions for their lattice constants, electronic properties and mechanical properties including bulk modulus, Young’s modulus, shear modulus, ductility, hardness and Debye temperature. It is found that most M 3 N compounds exhibit ductility with Vickers hardness between 0.4 GPa and 11.2 GPa. Our computed lattice constant for Cu 3 N, the only M 3 N compound where experiments exist, agrees well with the experimentally reported values. We report ratios of the melting points of all M 3 N compounds to that of Cu 3 N. The local density of states for all M 3 N compounds are obtained, and electronic band gaps are observed only for M of group 11 (Cu, Ag and Au) while the remaining M 3 N compounds are metallic without band gaps. Valence electron density along with the hybridization of the metal d and nitrogen 2p orbitals play an important role in determining the stability and hardness of different compounds. Our high-throughput databases for the cubic anti-ReO 3 structured transition metal nitrides should motivate future experimental work and shorten the time to their discovery

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

Topotactic Transformation of Metal-Organic Frameworks to Graphene-Encapsulated Transition-Metal Nitrides as Efficient Fenton-like Catalysts.

Science.gov (United States)

Li, Xuning; Ao, Zhimin; Liu, Jiayi; Sun, Hongqi; Rykov, Alexandre I; Wang, Junhu

2016-12-27

Innovation in transition-metal nitride (TMN) preparation is highly desired for realization of various functionalities. Herein, series of graphene-encapsulated TMNs (Fe x Mn 6-x Co 4 -N@C) with well-controlled morphology have been synthesized through topotactic transformation of metal-organic frameworks in an N 2 atmosphere. The as-synthesized Fe x Mn 6-x Co 4 -N@C nanodices were systematically characterized and functionalized as Fenton-like catalysts for catalytic bisphenol A (BPA) oxidation by activation of peroxymonosulfate (PMS). The catalytic performance of Fe x Mn 6-x Co 4 -N@C was found to be largely enhanced with increasing Mn content. Theoretical calculations illustrated that the dramatically reduced adsorption energy and facilitated electron transfer for PMS activation catalyzed by Mn 4 N are the main factors for the excellent activity. Both sulfate and hydroxyl radicals were identified during the PMS activation, and the BPA degradation pathway mainly through hydroxylation, oxidation, and decarboxylation was investigated. Based on the systematic characterization of the catalyst before and after the reaction, the overall PMS activation mechanism over Fe x Mn 6-x Co 4 -N@C was proposed. This study details the insights into versatile TMNs for sustainable remediation by activation of PMS.

Ion nitriding in 316=L stainless steel

International Nuclear Information System (INIS)

Rojas-Calderon, E.L.

1989-01-01

Ion nitriding is a glow discharge process that is used to induce surface modification in metals. It has been applied to 316-L austenitic stainless steel looking for similar benefits already obtained in other steels. An austenitic stainless steel was selected because is not hardenable by heat treatment and is not easy to nitride by gas nitriding. The samples were plastically deformed to 10, 20, 40, 50 AND 70% of their original thickness in order to obtain bulk hardening and to observe nitrogen penetration dependence on it. The results were: an increase of one to two rockwell hardness number (except in 70% deformed sample because of its thickness); an increase of even several hundreds per cent in microhardness knoop number in nitrided surface. The later surely modifies waste resistance which would be worth to quantify in further studies. Microhardness measured in an internal transversal face to nitrided surface had a gradual diminish in its value with depth. Auger microanalysis showed a higher relative concentration rate C N /C F e near the surface giving evidence of nitrogen presence till 250 microns deep. The color metallography etchant used, produced faster corrosion in nitrited regions. Therefore, corrosion studies have to be done before using ion nitrited 316-L under these chemicals. (Author)

Amorphous Metal Tungsten Nitride and its Application for Micro and Nanoelectromechanical Applications

KAUST Repository

Mayet, Abdulilah M.

2016-05-01

The objective of this doctoral thesis is to develop, engineer and investigate an amorphous metal tungsten nitride (aWNx) and to study its functionality for applications focused on electromechanical system at the nano-scale. Charge transport based solid state device oriented complementary metal oxide semiconductor (CMOS) electronics have reached a level where they are scaled down to nearly their fundamental limits regarding switching speed, off state power consumption and the on state power consumption due to the fundamental limitation of sub-threshold slope (SS) remains at 60 mV/dec. NEM switch theoretically and practically offers the steepest sub-threshold slope and practically has shown zero static power consumption due to their physical isolation originated from the nature of their mechanical operation. Fundamental challenges remain with NEM switches in context of their performance and reliability: (i) necessity of lower pull-in voltage comparable to CMOS technology; (ii) operation in ambient/air; (iii) increased ON current and decreased ON resistance; (iv) scaling of devices and improved mechanical and electrical contacts; and (v) high endurance. The “perfect” NEM switch should overcome all the above-mentioned challenges. Here, we show such a NEM switch fabricated with aWNx to show (i) sub-0.3-volt operation; (ii) operation in air and vacuum; (iii) ON current as high as 0.5 mA and ON resistance lower than 5 kΩ; (iv) improved mechanical contact; and the most importantly (v) continuous switching of 8 trillion cycles for more than 10 days with the highest switching speed is 30 nanosecond without hysteresis. In addition, tungsten nitride could be the modern life vine by fulfilling the demand of biodegradable material for sustainable life regime. Transient electronics is a form of biodegradable electronics as it is physically disappearing totally or partially after performing the required function. The fabricated aWNx suites this category very well, despite not

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

A first-principles study of half-metallic ferromagnetism in binary alkaline-earth nitrides with rock-salt structure

International Nuclear Information System (INIS)

Gao, G.Y.; Yao, K.L.; Liu, Z.L.; Zhang, J.; Min, Y.; Fan, S.W.

2008-01-01

In this Letter, using the first-principles full-potential linearized augmented plane-wave (FP-LAPW) method, we extend the electronic structure and magnetism studies on zinc-blende structure of II-V compounds MX (M=Ca,Sr,Ba; X=N,P,As) [M. Sieberer, J. Redinger, S. Khmelevskyi, P. Mohn, Phys. Rev. B 73 (2006) 024404] to the rock-salt structure. It is found that, in the nine compounds, only alkaline-earth nitrides CaN, SrN and BaN exhibit ferromagnetic half-metallic character with a magnetic moment of 1.00μ B per formula unit. Furthermore, compared with the zinc-blende structure of CaN, SrN and BaN, the rock-salt structure has lower energy, which makes them more promising candidates of possible growth of half-metallic films on suitable substrates

Nanostructured and nanolayer coatings based on nitrides of the metals structure study and structure and composition standard samples set development

Directory of Open Access Journals (Sweden)

E. B. Chabina

2014-01-01

Full Text Available Researches by methods of analytical microscopy and the x-ray analysis have allowed to develop a set of standard samples of composition and structure of the strengthening nanostructured and nanolayer coatings for control of the strengthening nanostructured and nanolayer coatings based on nitrides of the metals used to protect critical parts of the compressor of the gas turbine engine from dust erosion, corrosion and oxidation.

Plasma nitriding - an eco friendly surface hardening process

International Nuclear Information System (INIS)

Mukherjee, S.

2015-01-01

Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

Synthesis by reactive grinding of molybdenum iron bimetallic nitride; Sintesis por molienda reactiva del nitruro bimetalico Mo-Fe: Mo{sub 3}Fe{sub 3}N

Energy Technology Data Exchange (ETDEWEB)

Roldan, M. A.; Ortega, A.; Palencia, I.; Real, C.

2008-07-01

The transition metal nitride ternary show similar properties to the binary nitride and some times this behaviour are improved. In the present work, the molybdenum-iron nitride has been prepared by reactive grinding form the two metals under nitrogen atmosphere at a pressure of 11 bar. The characterization of the compounds is presented and it is also shown a study of the stability of the nitride under several atmospheres. (Author) 42 refs.

Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Keisuke; Nakashima, Hiroshi, E-mail: nakasima@astec.kyushu-u.ac.jp [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Noguchi, Ryutaro; Wang, Dong [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Mitsuhara, Masatoshi; Nishida, Minoru [Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Hara, Toru [National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2015-09-21

Electrical and structural properties were investigated for group-4 transition-metal nitride contacts on Ge (TiN/Ge, ZrN/Ge, and HfN/Ge), which were prepared by direct sputter depositions using nitride targets. These contacts could alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. It was revealed that this phenomenon is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the nitride/Ge interfaces. The strength of FLP alleviation positively depended on the thickness of a-IL. TiN/Ge and ZrN/Ge contacts with ∼2 nm-thick a-ILs showed strong FLP alleviations with hole barrier heights (Φ{sub BP}) in the range of 0.52–56 eV, and a HfN/Ge contact with an ∼1 nm-thick a-IL showed a weaker one with a Φ{sub BP} of 0.39 eV. However, TaN/Ge contact without a-IL did not show such FLP alleviation. Based on the results of depth distributions for respective elements, we discussed the formation kinetics of a-ILs at TiN/Ge and ZrN/Ge interfaces. Finally, we proposed an interfacial dipole model to explain the FLP alleviation.

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

Energy Technology Data Exchange (ETDEWEB)

Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

1993-05-01

This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

Crystallo-chemistry of actinide nitrides (U1-yPuy)N and effect of impurities

International Nuclear Information System (INIS)

Beauvy, M.; Coulon-Picard, E.; Pelletier, M.

2004-01-01

Investigations on actinide nitrides has been done in our Laboratories for Fast Breeder Reactors since the seventies and some properties are reported to show the interest for these fuels. Today, the actinide nitrides are reconsidered as possible fuels for the future fission reactors (GFR and LMFR selected by the international forum Generation IV). The results of new investigations on crystal structure of mixed mono-nitrides (U,Pu)N, and the effects of oxygen and carbon contaminations on this structure are presented. The cubic 'NaCl-fcc' type structure of actinide nitrides AnN with space group O5/h-Fm3m does not respect the 'Vegard law' model for the mixed nitrides (U 1-y Pu y )N. These nitrides are usually considered with strong metallic character associated with partial ionic bonding, but the ionic contribution in the An-N bonding determined in this work is very important and near 41.6% for UN and PuN. From results published on resistivity of mixed nitrides, the data on bonding must be also modified for partial covalence. This is in good agreement with the experimental lattice parameters which are not compatible with dominant metallic bonding. The numbers of bonding electrons in the nitrides (U 1-y Pu y )N are reevaluated and the low values proposed comparatively with those previously published confirm the strong ionic character with high concentration of An 3+ ions. The solubility of oxygen and carbon in actinide nitrides (U 1-y Pu y )N are discussed from measurements on volume concentration of actinide oxide phase, total oxygen and carbon contents, and lattice parameter of nitrides. The oxygen solubility limit in UN is near 1000 ppm, with a lightly higher value of 1200 ppm for the mixed nitride (U 0.8 Pu 0.2 )N. The effects of oxygen or carbon atoms in the lattice of (U 1-y Pu y )N are analysed

Electronic properties of Mn-decorated silicene on hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.; Gangopadhyay, S.; Jones, Burton; Schwingenschlö gl, Udo; Singh, Nirpendra

2013-01-01

We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

Electronic properties of Mn-decorated silicene on hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.

2013-12-17

We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

KAUST Repository

Mishra, Pawan

2017-01-01

Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI

Wettability of hot-pressed samples of boron-containing aluminium compounds by liquid metals and alloys

International Nuclear Information System (INIS)

Kharlamov, A.I.; Nizhenko, V.I.; Kirillova, N.V.; Floka, L.I.

2000-01-01

Highly dispersed powders of aluminium borides and borocarbides were sintered by hot pressing method. Temperature dependence of wettability of hot-pressed boride samples (α-AlB 12 and AlB 18 ) and aluminium borocarbides (Al 3 B 48 C 2 , Al 8 B 4 C 2 and AlB 24 C) by liquid aluminium, copper, germanium, silicon and melts Al + 25 wt.%Si and Cu + (3-6) wt.%Ti was studied. Dependence of a compound wettability on the ratio of components in it was analyzed [ru

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Directory of Open Access Journals (Sweden)

Paul C. McIntyre

2012-07-01

Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

DEFF Research Database (Denmark)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming Bjerg

2017-01-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe–22.7Cr–2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition......, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride...... precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic...

Multilayer-Forming Behavior of Cr Nitrides and Carbides for Thermoreactive Deposition

Directory of Open Access Journals (Sweden)

Kyeongmo Park

2018-05-01

Full Text Available The effect of a nitride layer on the forming behavior of CrN and (Cr, Fe7C3 multilayers for thermoreactive deposition (TRD was investigated. Plasma nitriding followed by TRD (PN-TRD produced a larger coating thickness than the case of direct TRD with no plasma nitriding. For PN-TRD, an Fe2-3N layer of 10 μm in thickness was produced on AISI 52100 steels using plasma nitriding, followed by TRD using a mixed powder composed of 30 wt % Cr, 2 wt % NH4Cl, and 68 wt % Al2O3. During TRD at 800 °C, a CrN layer of 2 μm in thickness was formed along with a thin layer of mixed carbide (Cr7C3 and nitride (CrN on top. As the deposition temperature was increased to 950 °C, a new layer of Cr7C3 was formed underneath the outermost layer composed of mixed Cr7C3 and CrN. At 950 °C, a Cr-rich zone indicated a thickness of ~7 μm. As the deposition time increased to 3 h at 950 °C, a new layer of (Cr, Fe7C3 was produced at the interface between the CrN formed at 800 °C and the base metal. This layer formed because of the abundant resources of Cr and C provided from the TRD powder and base metal, respectively. The multilayer and interface were concretely filled without the formation of voids as the TRD time increased to 6 h at 950 °C. The TRD process on a pre-nitrided layer was successfully applied to produce multilayers of CrN and Cr7C3.

Nitride alloy layer formation of duplex stainless steel using nitriding process

Science.gov (United States)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

Origin of interfacial charging in irradiated silicon nitride capacitors

International Nuclear Information System (INIS)

Hughes, R.C.

1984-01-01

Many experiments show that when metal-silicon nitride-silicon dioxide-silicon (MNOS) devices are irradiated in short circuit, a large interfacial charge builds up near the nitride-SiO 2 -Si interface. This effect cannot be explained by simple models of radiation-induced conductivity of the nitride, but it is reported here that inclusion of carrier diffusion and recombination in the photoconductivity equations can predict the observed behavior. Numerical solutions on a computer are required, however, when these complications are added. The simulations account for the magnitude and radiation dose dependence of the results, as well as the occurrence of a steady state during the irradiation. The location of the excess trapped charge near the interface is also predicted, along with the large number of new traps which must be introduced to influence the steady-state charge distribution

Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications

Science.gov (United States)

Huang, Yuhong; Wei, Oiang; Chu, Chung-tse; Zheng, Haixing

2001-01-01

Metal nitride, carbonitride, and oxycarbonitride powder with high surface area (up to 150 m.sup.2 /g) is prepared by using sol-gel process. The metal organic precursor, alkoxides or amides, is synthesized firstly. The metal organic precursor is modified by using unhydrolyzable organic ligands or templates. A wet gel is formed then by hydrolysis and condensation process. The solvent in the wet gel is then be removed supercritically to form porous amorphous hydroxide. This porous hydroxide materials is sintered to 725.degree. C. under the ammonia flow and porous nitride powder is formed. The other way to obtain high surface area nitride, carbonitride, and oxycarbonitride powder is to pyrolyze polymerized templated metal amides aerogel in an inert atmosphere. The electrochemical capacitors are prepared by using sol-gel prepared nitride, carbonitride, and oxycarbonitride powder. Two methods are used to assemble the capacitors. Electrode is formed either by pressing the mixture of nitride powder and binder to a foil, or by depositing electrode coating onto metal current collector. The binder or coating is converted into a continuous network of electrode material after thermal treatment to provide enhanced energy and power density. Liquid electrolyte is soaked into porous electrode. The electrochemical capacitor assembly further has a porous separator layer between two electrodes/electrolyte and forming a unit cell.

Metallurgical response of an AISI 4140 steel to different plasma nitriding gas mixtures

Directory of Open Access Journals (Sweden)

Adão Felipe Oliveira Skonieski

2013-01-01

Full Text Available Plasma nitriding is a surface modification process that uses glow discharge to diffuse nitrogen atoms into the metallic matrix of different materials. Among the many possible parameters of the process, the gas mixture composition plays an important role, as it impacts directly the formed layer's microstructure. In this work an AISI 4140 steel was plasma nitrided under five different gas compositions. The plasma nitriding samples were characterized using optical and scanning electron microscopy, microhardness test, X-ray diffraction and GDOES. The results showed that there are significant microstructural and morphological differences on the formed layers depending on the quantity of nitrogen and methane added to the plasma nitriding atmosphere. Thicknesses of 10, 5 and 2.5 µm were obtained when the nitrogen content of the gas mixtures were varied. The possibility to obtain a compound layer formed mainly by γ'-Fe4N nitrides was also shown. For all studied plasma nitriding conditions, the presence of a compound layer was recognized as being the responsible to hinder the decarburization on the steel surface. The highest value of surface hardness - 1277HV - were measured in the sample which were nitrided with 3vol.% of CH4.

Layered lithium transition metal nitrides as novel anodes for lithium secondary batteries

International Nuclear Information System (INIS)

Liu Yu; Horikawa, Kumi; Fujiyosi, Minako; Imanishi, Nobuyuki; Hirano, Atsushi; Takeda, Yasuo

2004-01-01

We report the approach to overcome the deterrents of the hexagonal Li 2.6 Co 0.4 N as potential insertion anode for lithium ion batteries: the rapid capacity fading upon long cycles and the fully Li-rich state before cycling. Research reveals that the appropriate amount of Co substituted by Cu can greatly improve the cycling performance of Li 2.6 Co 0.4 N. It is attributed to the enhanced electrochemical stability and interfacial comparability. However, doped Cu leads to a slightly decreased capacity. High energy mechanical milling (HEMM) was found to effectively improve the reversible capacity associated with the electrochemical kinetics by modifying the active hosts' morphology characteristics. Moreover, the composite based on mesocarbon microbead (MCMB) and Li 2.6 Co 0.4 N was developed under HEMM. The composite demonstrates a high first cycle efficiency at 100% and a large reversible capacity of ca. 450 mAh g -1 , as well as a stable cycling performance. This work may contribute to a development of the lithium transition metal nitrides as novel anodes for lithium ion batteries

Explosion of lithium-thionyl-chloride battery due to presence of lithium nitride

DEFF Research Database (Denmark)

Hennesø, E.; Hedlund, Frank Huess

2015-01-01

An explosion of a lithium–thionyl-chloride (Li–SOCl2) battery during production (assembly) leads to serious worker injury. The accident cell batch had been in a dry-air intermediate storage room for months before being readied with thionyl chloride electrolyte. Metallic lithium can react...... with atmospheric nitrogen to produce lithium nitride. Nodules of lithium nitride were found to be present on the lithium foil in other cells of the accident batch. The investigation attributed the explosion to the formation of porous lithium nitride during intermediate storage and a violent exothermal...... decomposition with the SOCl2–LiAlCl4 electrolyte triggered by welding. The literature is silent on hazards of explosion of Li–SOCl2 cells associated with the presence of lithium nitride. The silence is intriguing. Possible causes may be that such explosions are very rare, that explosions go unpublished...

Nanopillar arrays of amorphous carbon nitride

Science.gov (United States)

Sai Krishna, Katla; Pavan Kumar, B. V. V. S.; Eswaramoorthy, Muthusamy

2011-07-01

Nanopillar arrays of amorphous carbon nitride have been prepared using anodic aluminum oxide (AAO) membrane as a template. The amine groups present on the surface of these nanopillars were exploited for functionalization with oleic acid in order to stabilize the nanostructure at the aqueous-organic interface and also for the immobilization of metal nanoparticles and protein. These immobilised nanoparticles were found to have good catalytic activity.

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides

Science.gov (United States)

Lu, Haichang; Guo, Yuzheng; Robertson, John

2016-08-01

The Schottky Barrier Heights (SBH) of metal layers on top of monolayer hexagonal X-nitrides (X = B, Al, Ga, and h-XN) are calculated using supercells and density functional theory so as to understand the chemical trends of contact formation on graphene and the 2D layered semiconductors such as the transition metal dichalcogenides. The Fermi level pinning factor S of SBHs on h-BN is calculated to be nearly 1, indicating no pinning. For h-AlN and h-GaN, the calculated pinning factor is about 0.63, less than for h-BN. We attribute this to the formation of stronger, chemisorptive bonds between the nitrides and the contact metal layer. Generally, the h-BN layer remains in a planar sp2 geometry and has weak physisorptive bonds to the metals, whereas h-AlN and h-GaN buckle out of their planar geometry which enables them to form the chemisorptive bonds to the metals.

Explosion of lithium-thionyl-chloride battery due to presence of lithium nitride

OpenAIRE

Hennesø, E.; Hedlund, Frank Huess

2015-01-01

An explosion of a lithium–thionyl-chloride (Li–SOCl2) battery during production (assembly) leads to serious worker injury. The accident cell batch had been in a dry-air intermediate storage room for months before being readied with thionyl chloride electrolyte. Metallic lithium can react with atmospheric nitrogen to produce lithium nitride. Nodules of lithium nitride were found to be present on the lithium foil in other cells of the accident batch. The investigation attributed the explosion t...

Nanometric resolution in glow discharge optical emission spectroscopy and Rutherford backscattering spectrometry depth profiling of metal (Cr, Al) nitride multilayers

International Nuclear Information System (INIS)

Escobar Galindo, R.; Gago, R.; Fornies, E.; Munoz-Martin, A.; Climent Font, A.; Albella, J.M.

2006-01-01

In this work, we address the capability of glow discharge optical emission spectroscopy (GDOES) for fast and accurate depth profiling of multilayer nitride coatings down to the nanometer range. This is shown by resolving the particular case of CrN/AlN structures with individual thickness ranging from hundreds to few nanometers. In order to discriminate and identify artefacts in the GDOES depth profile due to the sputtering process, the layered structures were verified by Rutherford backscattering spectrometry (RBS) and scanning electron microscopy (SEM). The interfaces in the GDOES profiles for CrN/AlN structures are sharper than the ones measured for similar metal multilayers due to the lower sputtering rate of the nitrides. However, as a consequence of the crater shape, there is a linear degradation of the depth resolution with depth (approximately 40 nm/μm), saturating at a value of approximately half the thickness of the thinner layer. This limit is imposed by the simultaneous sputtering of consecutive layers. The ultimate GDOES depth resolution at the near surface region was estimated to be of 4-6 nm

Neutron detection using boron gallium nitride semiconductor material

Directory of Open Access Journals (Sweden)

Katsuhiro Atsumi

2014-03-01

Full Text Available In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

Science.gov (United States)

Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

2018-04-01

Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

A study of nitride formation during the oxidation of titanium-tantalum alloys

International Nuclear Information System (INIS)

Hanrahan, R.J. Jr.; Lu, Y.C.; Kung, H.; Butt, D.P.

1996-01-01

The oxidation rates of Ti rich titanium-tantalum alloys are significantly lower in air than in oxygen. This nitrogen effect has been shown to be associated with the formation of a nitride layer at or near the scale-metal interface. In the present work the authors used transmission electron microscopy and microdiffraction to identify the nitrides formed on Ti5Ta and Ti40Ta (5 and 40 weight percent Ta alloys) during identical exposures. In both alloys the nitride develops in contact with the oxygen stabilized α-phase in the substrate. In Ti5Ta a continuous layer of TiN forms, while in Ti40Ta a discontinuous layer of Ti 2 N interspersed with Ta 2 O 5 (formed from the Ta rich β-phase) is formed. The nitride layer acts as an oxygen diffusion barrier, reducing the dissolution of oxygen in the substrate

Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

Energy Technology Data Exchange (ETDEWEB)

Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

2014-11-01

We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

Plasma nitriding of steels

CERN Document Server

Aghajani, Hossein

2017-01-01

This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

Kinetics of the nitridation of dysprosium during mechanochemical processing

Energy Technology Data Exchange (ETDEWEB)

Alanko, Gordon A.; Osterberg, Daniel D.; Jaques, Brian J. [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Hurley, Michael F. [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Center for Advanced Energy Studies, 995 University Boulevard, Idaho Falls, ID 83401 (United States); Butt, Darryl P., E-mail: darrylbutt@boisestate.edu [Department of Materials Science and Engineering, College of Engineering, Boise State University, 1910 University Drive, Boise, ID 83725 (United States); Center for Advanced Energy Studies, 995 University Boulevard, Idaho Falls, ID 83401 (United States)

2015-01-25

Highlights: • DyN was mechanochemically synthesized by milling pure metal under nitrogen. • Temperature and pressure were monitored to investigate reaction progress. • The effects of metal adhered to media on the impact energetics was measured. • The reactive milling kinetics are described in terms of reactive surface formation. - Abstract: Dysprosium nitride was synthesized by the reactive milling of the rare earth metal under 400 kPa nitrogen gas in a planetary ball mill. The nitrogen consumption rate was calculated from in situ temperature and pressure measurements to find the reaction extent as a function of milling time at milling speeds from 350 to 650 rpm. The results are analyzed in terms of a fundamental milling dynamics model in which the input milling energy is the primary driving force for reaction and the rate limiting step of the nitridation kinetics is the formation of chemically active surfaces. The model differs from traditional gas–solid reactions which are often limited by diffusion of a species through a surface layer or by dissociation of the gas molecule. These results give fresh insight into reactive gas–solid milling kinetics.

Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers

Energy Technology Data Exchange (ETDEWEB)

Greczynski, G., E-mail: grzgr@ifm.liu.se [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Primetzhofer, D. [Department of Physics and Astronomy, The Ångström Laboratory, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); Lu, J.; Hultman, L. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2017-02-28

Highlights: • First non-destructive measurements of XPS core level binding energies for group IVb-VIb transition metal nitrides are presented. • All films are grown under the same conditions and analyzed in the same instrument, providing a useful reference for future XPS studies. • Extracted core level BE values are more reliable than those obtained from sputter-cleaned N-deficient surfaces. • Comparison to Ar+-etched surfaces reveals that even mild etching conditions result in the formation of a nitrogen-deficient surface layer. • The N/metal concentration ratios from capped samples are found to be 25-90% higher than those from the corresponding ion-etched surfaces. - Abstract: We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level binding energies (BE:s) for the widely-applicable group IVb-VIb polycrystalline transition metal nitrides (TMN’s) TiN, VN, CrN, ZrN, NbN, MoN, HfN, TaN, and WN as well as AlN and SiN, which are common components in the TMN-based alloy systems. Nitride thin film samples were grown at 400 °C by reactive dc magnetron sputtering from elemental targets in Ar/N{sub 2} atmosphere. For XPS measurements, layers are either (i) Ar{sup +} ion-etched to remove surface oxides resulting from the air exposure during sample transfer from the growth chamber into the XPS system, or (ii) in situ capped with a few nm thick Cr or W overlayers in the deposition system prior to air-exposure and loading into the XPS instrument. Film elemental composition and phase content is thoroughly characterized with time-of-flight elastic recoil detection analysis (ToF-E ERDA), Rutherford backscattering spectrometry (RBS), and x-ray diffraction. High energy resolution core level XPS spectra acquired with monochromatic Al Kα radiation on the ISO-calibrated instrument reveal that even mild etching conditions result in the formation of a nitrogen-deficient surface layer that substantially affects the extracted binding energy

Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers

International Nuclear Information System (INIS)

Greczynski, G.; Primetzhofer, D.; Lu, J.; Hultman, L.

2017-01-01

Highlights: • First non-destructive measurements of XPS core level binding energies for group IVb-VIb transition metal nitrides are presented. • All films are grown under the same conditions and analyzed in the same instrument, providing a useful reference for future XPS studies. • Extracted core level BE values are more reliable than those obtained from sputter-cleaned N-deficient surfaces. • Comparison to Ar+-etched surfaces reveals that even mild etching conditions result in the formation of a nitrogen-deficient surface layer. • The N/metal concentration ratios from capped samples are found to be 25-90% higher than those from the corresponding ion-etched surfaces. - Abstract: We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level binding energies (BE:s) for the widely-applicable group IVb-VIb polycrystalline transition metal nitrides (TMN’s) TiN, VN, CrN, ZrN, NbN, MoN, HfN, TaN, and WN as well as AlN and SiN, which are common components in the TMN-based alloy systems. Nitride thin film samples were grown at 400 °C by reactive dc magnetron sputtering from elemental targets in Ar/N 2 atmosphere. For XPS measurements, layers are either (i) Ar + ion-etched to remove surface oxides resulting from the air exposure during sample transfer from the growth chamber into the XPS system, or (ii) in situ capped with a few nm thick Cr or W overlayers in the deposition system prior to air-exposure and loading into the XPS instrument. Film elemental composition and phase content is thoroughly characterized with time-of-flight elastic recoil detection analysis (ToF-E ERDA), Rutherford backscattering spectrometry (RBS), and x-ray diffraction. High energy resolution core level XPS spectra acquired with monochromatic Al Kα radiation on the ISO-calibrated instrument reveal that even mild etching conditions result in the formation of a nitrogen-deficient surface layer that substantially affects the extracted binding energy values. These

Single-layer graphene on silicon nitride micromembrane resonators

DEFF Research Database (Denmark)

Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

2014-01-01

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect...... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Science.gov (United States)

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-07-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Niobium Nitride Nb4N5 as a New High-Performance Electrode Material for Supercapacitors.

Science.gov (United States)

Cui, Houlei; Zhu, Guilian; Liu, Xiangye; Liu, Fengxin; Xie, Yian; Yang, Chongyin; Lin, Tianquan; Gu, Hui; Huang, Fuqiang

2015-12-01

Supercapacitors suffer either from low capacitance for carbon or derivate electrodes or from poor electrical conductivity and electrochemical stability for metal oxide or conducting polymer electrodes. Transition metal nitrides possess fair electrical conductivity but superior chemical stability, which may be desirable candidates for supercapacitors. Herein, niobium nitride, Nb 4 N 5 , is explored to be an excellent capacitive material for the first time. An areal capacitance of 225.8 mF cm -2 , with a reasonable rate capability (60.8% retention from 0.5 to 10 mA cm -2 ) and cycling stability (70.9% retention after 2000 cycles), is achieved in Nb 4 N 5 nanochannels electrode with prominent electrical conductivity and electrochemical activity. Faradaic pseudocapacitance is confirmed by the mechanistic studies, deriving from the proton incorporation/chemisorption reaction owing to the copious +5 valence Nb ions in Nb 4 N 5 . Moreover, this Nb 4 N 5 nanochannels electrode with an ultrathin carbon coating exhibits nearly 100% capacitance retention after 2000 CV cycles, which is an excellent cycling stability for metal nitride materials. Thus, the Nb 4 N 5 nanochannels are qualified for a candidate for supercapacitors and other energy storage applications.

Niobium Nitride Nb4N5 as a New High‐Performance Electrode Material for Supercapacitors

Science.gov (United States)

Cui, Houlei; Zhu, Guilian; Liu, Xiangye; Liu, Fengxin; Xie, Yian; Yang, Chongyin; Lin, Tianquan; Gu, Hui

2015-01-01

Supercapacitors suffer either from low capacitance for carbon or derivate electrodes or from poor electrical conductivity and electrochemical stability for metal oxide or conducting polymer electrodes. Transition metal nitrides possess fair electrical conductivity but superior chemical stability, which may be desirable candidates for supercapacitors. Herein, niobium nitride, Nb4N5, is explored to be an excellent capacitive material for the first time. An areal capacitance of 225.8 mF cm−2, with a reasonable rate capability (60.8% retention from 0.5 to 10 mA cm−2) and cycling stability (70.9% retention after 2000 cycles), is achieved in Nb4N5 nanochannels electrode with prominent electrical conductivity and electrochemical activity. Faradaic pseudocapacitance is confirmed by the mechanistic studies, deriving from the proton incorporation/chemisorption reaction owing to the copious +5 valence Nb ions in Nb4N5. Moreover, this Nb4N5 nanochannels electrode with an ultrathin carbon coating exhibits nearly 100% capacitance retention after 2000 CV cycles, which is an excellent cycling stability for metal nitride materials. Thus, the Nb4N5 nanochannels are qualified for a candidate for supercapacitors and other energy storage applications. PMID:27980920

Superconducting nitride halides MNX (M = Ti, Zr, Hf; X = Cl, Br, I)

Energy Technology Data Exchange (ETDEWEB)

Schurz, Christian M.; Shlyk, Larysa; Schleid, Thomas; Niewa, Rainer [Stuttgart Univ. (Germany). Inst. fuer Anorganische Chemie

2011-07-01

Two different polymorphs of the metal nitride halides MNX (M = Ti, Zr, Hf; X = Cl, Br, I) are known to crystallize in layered structures. The two crystal structures differ in the way {sub {infinity}}{sup 2}{l_brace}X[M{sub 2}N{sub 2}]X{r_brace} slabs are stacked along the c-axes. Metal atoms and/or organic molecules can be intercalated into the van-der-Waals gap between these layers. After such an electron-doping via intercalation the prototypic band insulators change into superconductors with moderate high critical temperatures T{sub c} up to 25.5 K. This review gathers information on synthesis routes, structural characteristics and properties of the prototypic nitride halides and the derivatives after electron-doping with a focus on superconductivity. (orig.)

Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride

International Nuclear Information System (INIS)

Oberkofler, Martin

2011-01-01

In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

The mechanical design of hybrid graphene/boron nitride nanotransistors: Geometry and interface effects

Science.gov (United States)

Einalipour Eshkalak, Kasra; Sadeghzadeh, Sadegh; Jalaly, Maisam

2018-02-01

From electronic point of view, graphene resembles a metal or semi-metal and boron nitride is a dielectric material (band gap = 5.9 eV). Hybridization of these two materials opens band gap of the graphene which has expansive applications in field-effect graphene transistors. In this paper, the effect of the interface structure on the mechanical properties of a hybrid graphene/boron nitride was studied. Young's modulus, fracture strain and tensile strength of the models were simulated. Three likely types (hexagonal, octagonal and decagonal) were found for the interface of hybrid sheet after relaxation. Although Csbnd B bonds at the interface were indicated to result in more promising electrical properties, nitrogen atoms are better choice for bonding to carbon for mechanical applications.

Short-range order studies in nonstoichiometric transition metal carbides and nitrides by neutron diffuse scattering

International Nuclear Information System (INIS)

Priem, Thierry

1988-01-01

Short-range order in non-stoichiometric transition metal carbides and nitrides (TiN 0.82 , TiC 0.64 , TiC 0.76 , NbC 0.73 and NbC 0.83 ) was investigated by thermal neutron diffuse scattering on G4-4 (L.L.B - Saclay) and D10 (I.L.L. Grenoble) spectrometers. From experimental measurements, we have found that metalloid vacancies (carbon or nitrogen) prefer the f.c.c. third neighbour positions. Ordering interaction energies were calculated within the Ising model framework by three approximations: mean field (Clapp and Moss formula), Monte-Carlo simulation, Cluster variation Method. The energies obtained by the two latter methods are very close, and in qualitative agreement with theoretical values calculated from the band structure. Theoretical phase diagrams were calculated from these ordering energies for TiN x and TiC x ; three ordered structures were predicted, corresponding to compositions Ti 6 N 5 Ti 2 C and Ti 3 C 2 . On the other hand, atomic displacements are induced by vacancies. The metal first neighbours were found to move away from a vacancy, whereas the second neighbours move close to it. Near neighbour atomic displacements were theoretically determined by the lattice statics formalism with results in good agreement with experiment. (author) [fr

Ion nitriding of aluminium

International Nuclear Information System (INIS)

Fitz, T.

2002-09-01

The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

Progress in efficient doping of high aluminum-containing group III-nitrides

Science.gov (United States)

Liang, Y.-H.; Towe, E.

2018-03-01

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

Surface modification of austenitic steel by various glow-discharge nitriding methods

Directory of Open Access Journals (Sweden)

Tomasz Borowski

2015-09-01

Full Text Available Recent years have seen intensive research on modifying glow-discharge nitriding processes. One of the most commonly used glow-discharge methods includes cathodic potential nitriding (conventional method, and active screen plasma nitriding. Each of these methods has a number of advantages. One very important, common feature of these techniques is full control of the microstructure, chemical and phase composition, thickness and the surface topography of the layers formed. Another advantage includes the possibility of nitriding such materials as: austenitic steels or nickel alloys, i.e. metallic materials which do not diffuse nitrogen as effectively as ferritic or martensitic steels. However, these methods have some disadvantages as well. In the case of conventional plasma nitriding, engineers have to deal with the edge effect, which makes it difficult to use this method for complexly shaped components. In turn, in the case of active screen plasma nitriding, the problem disappears. A uniform, smooth layer forms, but is thinner, softer and is not as resistant to friction compared to layers formed using the conventional method. Research is also underway to combine these methods, i.e. use an active screen in conventional plasma nitriding at cathodic potential. However, there is a lack of comprehensive data presenting a comparison between these three nitriding processes and the impact of pulsating current on the formation of the microstructure and functional properties of austenitic steel surfaces. The article presents a characterisation of nitrided layers produced on austenitic X2CrNiMo17-12-2 (AISI 316L stainless steel in the course of glow-discharge nitriding at cathodic potential, at plasma potential and at cathodic potential incorporating an active screen. All processes were carried out at 440 °C under DC glow-discharge conditions and in 100 kHz frequency pulsating current. The layers were examined in terms of their microstructure, phase and

Laboratory Directed Research and Development (LDRD) on Mono-uranium Nitride Fuel Development for SSTAR and Space Applications

International Nuclear Information System (INIS)

Choi, J; Ebbinghaus, B; Meiers, T; Ahn, J

2006-01-01

The US National Energy Policy of 2001 advocated the development of advanced fuel and fuel cycle technologies that are cleaner, more efficient, less waste-intensive, and more proliferation resistant. The need for advanced fuel development is emphasized in on-going DOE-supported programs, e.g., Global Nuclear Energy Initiative (GNEI), Advanced Fuel Cycle Initiative (AFCI), and GEN-IV Technology Development. The Directorates of Energy and Environment (E and E) and Chemistry and Material Sciences (C and MS) at Lawrence Livermore National Laboratory (LLNL) are interested in advanced fuel research and manufacturing using its multi-disciplinary capability and facilities to support a design concept of a small, secure, transportable, and autonomous reactor (SSTAR). The E and E and C and MS Directorates co-sponsored this Laboratory Directed Research and Development (LDRD) Project on Mono-Uranium Nitride Fuel Development for SSTAR and Space Applications. In fact, three out of the six GEN-IV reactor concepts consider using the nitride-based fuel, as shown in Table 1. SSTAR is a liquid-metal cooled, fast reactor. It uses nitride fuel in a sealed reactor vessel that could be shipped to the user and returned to the supplier having never been opened in its long operating lifetime. This sealed reactor concept envisions no fuel refueling nor on-site storage of spent fuel, and as a result, can greatly enhance proliferation resistance. However, the requirement for a sealed, long-life core imposes great challenges to research and development of the nitride fuel and its cladding. Cladding is an important interface between the fuel and coolant and a barrier to prevent fission gas release during normal and accidental conditions. In fabricating the nitride fuel rods and assemblies, the cladding material should be selected based on its the coolant-side corrosion properties, the chemical/physical interaction with the nitride fuel, as well as their thermal and neutronic properties. The US

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

Science.gov (United States)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

Joining technique of silicon nitride and silicon carbide in a mixture and/or in contact with high-melting metals and alloys

International Nuclear Information System (INIS)

Mueller-Zell, A.

1980-01-01

The following work gives a survey on possible joining techniques of silicon nitride (Si 3 N 4 ) and silicon carbide (SiC) in a mixture and/or in contact with high-melting metals and alloys. The problem arose because special ceramic materials such as Si 3 N 4 and SiC are to be used in gas turbines. The special ceramics in use may unavoidably come into contact with metals or the one hand, or form intended composite systems with them on the other hand, like e.g. the joining of a Si 3 N 4 disc with a metallic drive axis or ceramic blades with a metal wheel. The mixed body of X% ceramic (Si 3 N 4 , SiC) and Y% metal powder were prepared depending on the material combination at 1200 0 C-1750 0 C by hot-pressing or at 1200 0 C-2050 0 C by hot-pressing or pressureless sintering. The following possible ways were chosen as interlaminar bonding ceramic/metal/ceramic: on the one hand pressure welding (composite hot pressing) and the solid-state bonding in direct contact and by means of artificially included transition mixed layers, as well as material intermediate layers between metal and ceramic and on the other hand, soldering with active solder with molten phase. (orig./RW) [de

Valence electronic structure of tantalum carbide and nitride

Institute of Scientific and Technical Information of China (English)

FAN; ChangZeng

2007-01-01

The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……

Valence electronic structure of tantalum carbide and nitride

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

@@ The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.

Syntheses, Characterization and Kinetics of Nickel-Tungsten Nitride Catalysts for Hydrotreating of Gas Oil

Science.gov (United States)

Botchwey, Christian

This thesis summarizes the methods and major findings of Ni-W(P)/gamma-Al 2O3 nitride catalyst synthesis, characterization, hydrotreating activity, kinetic analysis and correlation of the catalysts' activities to their synthesis parameters and properties. The range of parameters for catalyst synthesis were W (15-40 wt%), Ni (0-8 wt%), P (0-5 wt%) and nitriding temperature (TN) (500-900 °C). Characterization techniques used included: N2 sorption studies, chemisorption, elemental analysis, temperature programmed studies, x-ray diffraction, scanning electron microscopy, energy dispersive x-ray, infrared spectroscopy, transmission electron microscopy and x-ray absorption near edge structure. Hydrodesulfurization (HDS), hydrodenitrogenation (HDN) and hydrodearomatization (HDA) were performed at: temperature (340-380 °C), pressure (6.2-9.0 MPa), liquid hourly space velocity (1-3 h-1) and hydrogen to oil ratio (600 ml/ml, STP). The predominant species on the catalyst surface were Ni3N, W2N and bimetallic Ni2W3N. The bimetallic Ni-W nitride species was more active than the individual activities of the Ni3N and W2N. P increased weak acid sites while nitriding temperature decreased amount of strong acid sites. Low nitriding temperature enhanced dispersion of metal particles. P interacted with Al 2O3 which increased the dispersion of metal nitrides on the catalyst surface. HDN activity increased with Ni and P loading but decreased with increase in nitriding temperature (optimum conversion; 60 wt%). HDS and HDA activities went through a maximum with increase in the synthesis parameters (optimum conversions; 88. wt% for HDS and 47 wt% for HDA). Increase in W loading led to increase in catalyst activity. The catalysts were stable to deactivation and had the nitride structure conserved during hydrotreating in the presence of hydrogen sulfide. The results showed good correlation between hydrotreating activities (HDS and HDN) and the catalyst nitrogen content, number of exposed

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

Science.gov (United States)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming B.; Somers, Marcel A. J.

2017-10-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe-22.7Cr-2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic elements between austenite and nitrides, with chromium contents of about 80 wt.% in the precipitates. XRD analysis indicated that the Chromium-rich nitride precipitates are hexagonal (Cr, Mo)2N. Based on the TEM studies, (Cr, Mo)2N precipitates presented a (1 1 1)γ//(0 0 2)(Cr, Mo)2N, ?γ//?(Cr, Mo)2N orientation relationship with respect to the austenite matrix. EBSD studies revealed that the austenite in the regions that have transformed into austenite and (Cr, Mo)2N have no orientation relation to the untransformed austenite.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

Directory of Open Access Journals (Sweden)

Franklin Che

Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

Fabrication of vanadium nitride by carbothermal nitridation reaction

International Nuclear Information System (INIS)

Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

2005-01-01

Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

Science.gov (United States)

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-01-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

International Nuclear Information System (INIS)

Shams, Q.A.

1988-01-01

Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors

NARCIS (Netherlands)

Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

2011-01-01

In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the

Formation of zirconium nitride via mechanochemical decomposition of zircon

International Nuclear Information System (INIS)

Puclin, T.; Kaczmarek, W.A.

1996-01-01

In this paper we report some results of the mechanochemical reduction of zircon, and for the first time subsequent reaction with nitrogen to form zirconium nitride (ZrN). This process can be described by the equation: 3ZrSiO 4 + 8Al + 1.5N 2 = 4Al 2 O 3 + 3ZrN + 3Si. Milling was carried out in three steps: 1) low speed grinding of Al+ZrSiO 4 in vacuum, 2) high speed milling to effect the reduction, and 3) continued milling after the addition of nitrogen. Powders produced were examined by X-ray diffraction. The first step showed no reaction occurred during low speed grinding. The second step proved to be a slow reaction without the 'ignition' often seen in other mechanochemical reduction works. The final step was also gradual, and did not always go to full nitridation over the duration of the experiment, giving a product of composition ZrN 0.6 to ZrN l.0 . This is quite acceptable as transition metal nitrides are often non-stoichiometric. These results show that the formation of a useful hard material such as ZrN can be formed from a raw mineral by two stage mechanochemical processing. Further investigations are currently being undertaken to eliminate Fe contamination and produce pure ceramic oxide-nitride composites

Determination of Carrier Polarity in Fowler-Nordheim Tunneling and Evidence of Fermi Level Pinning at the Hexagonal Boron Nitride/Metal Interface.

Science.gov (United States)

Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke

2018-04-11

Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO 2 . Here, we report two clear differences in their physical properties. The first one is the occurrence of Fermi level pinning at the metal/h-BN interface, unlike that at the metal/SiO 2 interface. The second one is that the carrier of Fowler-Nordheim (F-N) tunneling through h-BN is a hole, which is opposite to an electron in the case of SiO 2 . These unique characteristics are verified by I- V measurements in the graphene/h-BN/metal heterostructure device with the aid of a numerical simulation, where the barrier height of graphene can be modulated by a back gate voltage owing to its low density of states. Furthermore, from a systematic investigation using a variety of metals, it is confirmed that the hole F-N tunneling current is a general characteristic because the Fermi levels of metals are pinned in the small energy range around ∼3.5 eV from the top of the conduction band of h-BN, with a pinning factor of 0.30. The accurate energy band alignment at the h-BN/metal interface provides practical knowledge for 2D heterostructure devices.

Corrosion-resistant titanium nitride coatings formed on stainless steel by ion-beam-assisted deposition

International Nuclear Information System (INIS)

Baba, K.; Hatada, R.

1994-01-01

Titanium films 70nm thick were deposited on austenitic type 316L stainless steel substrates, and these specimens were irradiated with titanium ions of energy 70kV at a fluence of 1x10 17 ioncm -2 , using a metal vapor vacuum arc (MEVVA) IV metallic ion source at room temperature. After irradiation, titanium nitride (TiN) films were deposited by titanium evaporation and simultaneous irradiation by a nitrogen ion beam, with transport ratios of Ti to N atoms from 0.5 to 10.0 and an ion acceleration voltage of 2kV. The preferred orientation of the TiN films varied from left angle 200 right angle to left angle 111 right angle normal to the surface when the transport ratio was increased. With the help of Auger electron spectroscopy, interfacial mixing was verified. Nitrogen atoms were present in the state of titanium nitride for all transport ratios from 0.5 up to 10.0. However, the chemical bonding state of titanium changed from titanium nitride to the metallic state with increasing transport ratio Ti/N. The corrosion behavior was evaluated in an aqueous solution of sulfuric acid saturated with oxygen, using multisweep cyclic voltammetry measurements. Thin film deposition of pure titanium and titanium implantation prior to TiN deposition have beneficial effects on the suppression of transpassive chromium dissolution. ((orig.))

Work Function Tuning in Sub-20nm Titanium Nitride (TiN) Metal Gate: Mechanism and Engineering

KAUST Repository

Hasan, Mehdi

2011-07-01

Scaling of transistors (the building blocks of modern information age) provides faster computation at the expense of excessive power dissipation. Thus to address these challenges, high-k/metal gate stack has been introduced in commercially available microprocessors from 2007. Since then titanium nitride (TiN) metal gate’s work function (Wf) tunability with its thickness (thickness increases, work function increases) is a well known phenomenon. Many hypotheses have been made over the years which include but not limited to: trap charge and metal gate nucleation, nitrogen concentration, microstructure agglomeration and global stress, metal oxide formation, and interfacial oxide thickness. However, clear contradictions exist in these assumptions. Also, nearly all these reports skipped a comprehensive approach to explain this complex paradigm. Therefore, in this work we first show a comprehensive physical investigation using transmission electron microcopy/electron energy loss spectroscopy (TEM/EELS), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) to show replacement of oxygen by nitrogen in the metal/dielectric interface, formation of TiONx, reduction of Ti/N concentration and grain size increment happen with TiN thickness increment and thus may increase the work function. Then, using these finding, we experimentally show 100meV of work function modulation in 10nm TiN Metal-oxide-semiconductor capacitor by using low temperature oxygen annealing. A low thermal budget flow (replicating gate-last) shows similar work function boost up. Also, a work function modulation of 250meV has been possible using oxygen annealing and applying no thermal budget. On the other hand, etch-back of TiN layer can decrease the work function. Thus this study quantifies role of various factors in TiN work function tuning; it also reproduces the thickness varied TiN work function modulation in single thickness TiN thus reducing the

XPS study of the ultrathin a-C:H films deposited onto ion beam nitrided AISI 316 steel

International Nuclear Information System (INIS)

Meskinis, S.; Andrulevicius, M.; Kopustinskas, V.; Tamulevicius, S.

2005-01-01

Effects of the steel surface treatment by nitrogen ion beam and subsequent deposition of the diamond-like carbon (hydrogenated amorphous carbon (a-C:H) and nitrogen doped hydrogenated amorphous carbon (a-CN x :H)) films were investigated by means of the X-ray photoelectron spectroscopy (XPS). Experimental results show that nitrogen ion beam treatment of the AISI 316 steel surface even at room temperature results in the formation of the Cr and Fe nitrides. Replacement of the respective metal oxides by the nitrides takes place. Formation of the C-N bonds was observed for both ultrathin a-C:H and ultrathin a-CN x :H layers deposited onto the nitrided steel. Some Fe and/or Cr nitrides still were presented at the interface after the film deposition, too. Increased adhesion between the steel substrate and hydrogenated amorphous carbon layer after the ion beam nitridation was explained by three main factors. The first two is steel surface deoxidisation/passivation by nitrogen as a result of the ion beam treatment. The third one is carbon nitride formation at the nitrided steel-hydrogenated amorphous carbon (or a-CN x :H) film interface

Comparative sodium void effects for different advanced liquid metal reactor fuel and core designs

International Nuclear Information System (INIS)

Dobbin, K.D.; Kessler, S.F.; Nelson, J.V.; Gedeon, S.R.; Omberg, R.P.

1991-01-01

An analysis of metal-, oxide-, and nitride-fueled advanced liquid metal reactor cores was performed to investigate the calculated differences in sodium void reactivity, and to determine the relationship between sodium void reactivity and burnup reactivity swing using the three fuel types. The results of this analysis indicate that nitride fuel has the least positive sodium void reactivity for any given burnup reactivity swing. Thus, it appears that a good design compromise between transient overpower and loss of flow response is obtained using nitride fuel. Additional studies were made to understand these and other nitride advantages. (author)

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

Science.gov (United States)

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Enhancing the Hardness of Sintered SS 17-4PH Using Nitriding Process for Bracket Orthodontic Application

Science.gov (United States)

Suharno, B.; Supriadi, S.; Ayuningtyas, S. T.; Widjaya, T.; Baek, E. R.

2018-01-01

Brackets orthodontic create teeth movement by applying force from wire to bracket then transferred to teeth. However, emergence of friction between brackets and wires reduces load for teeth movement towards desired area. In order to overcome these problem, surface treatment like nitriding chosen as a process which could escalate efficiency of transferred force by improving material hardness since hard materials have low friction levels. This work investigated nitriding treatment to form nitride layer which affecting hardness of sintered SS 17-4PH. The nitride layers produced after nitriding process at various temperature i.e. 470°C, 500°C, 530°C with 8hr holding time under 50% NH3 atmosphere. Optical metallography was conducted to compare microstructure of base and surface metal while the increasing of surface hardness then observed using vickers microhardness tester. Hardened surface layer was obtained after gaseous nitriding process because of nitride layer that contains Fe4N, CrN and Fe-αN formed. Hardness layers can achieved value 1051 HV associated with varies thickness from 53 to 119 μm. The presence of a precipitation process occurring in conjunction with nitriding process can lead to a decrease in hardness due to nitrogen content diminishing in solid solution phase. This problem causes weakening of nitrogen expansion in martensite lattice.

Ab initio calculations of non-stoichiometric copper nitride, pure and with palladium

International Nuclear Information System (INIS)

Moreno-Armenta, Maria G.; Soto, Gerardo; Takeuchi, Noboru

2011-01-01

Research highlights: → The most stable arrangement corresponds to the Cu 3 N-anti ReO 3 structure. → Formation energy of Cu 32 Vac 0 N 8 and Cu 24 Pd 8 Vac 0 N 8 are very similar. → The biggest volume in the compound is Cu 31 Pd 1 Vac 0 N 8/ . → Small amount introduction of extra metal atoms in copper nitride is possible. - Abstract: We present first principles calculations of copper nitride by using periodic density functional theory within a plane-wave ultrasoft pseudopotential scheme. The insertions of extra Cu and/or Pd atoms in the empty sites, vacancy reorganization, and substitution of Cu by Pd atoms were studied. We have used an equivalent reduced-symmetry 2 x 2 x 2 Cu 3 N-like cubic super-cell. Small Cu and/or Pd concentrations and vacancy rearrangements in the copper sub-lattice were conveniently calculated in these low-symmetry cells. We cover probable situations like: the occupation of the initially empty copper sites by (1) copper atoms, and by (2) palladium; (3) the relocation of vacancies in the copper sub-lattice; and (4) the substitution of small quantities of copper by palladium atoms in the copper sub-lattice. The equilibrium volumes and energies after relaxing the atomic positions are compared to those of intrinsic copper nitride. We found that the most stable arrangement corresponds to the ideal stoichiometric Cu 3 N. We also found that any deviation from this ideal configuration shift the semiconductor state to a metallic or semi-metallic one.

Graphitic carbon nitride nanosheet@metal-organic framework core-shell nanoparticles for photo-chemo combination therapy

Science.gov (United States)

Chen, Rui; Zhang, Jinfeng; Wang, Yu; Chen, Xianfeng; Zapien, J. Antonio; Lee, Chun-Sing

2015-10-01

Recently, nanoscale metal-organic frameworks (NMOFs) have started to be developed as a promising platform for bioimaging and drug delivery. On the other hand, combination therapies using multiple approaches are demonstrated to achieve much enhanced efficacy. Herein, we report, for the first time, core-shell nanoparticles consisting of a photodynamic therapeutic (PDT) agent and a MOF shell while simultaneously carrying a chemotherapeutic drug for effective combination therapy. In this work, core-shell nanoparticles of zeolitic-imadazolate framework-8 (ZIF-8) as shell embedded with graphitic carbon nitride (g-C3N4) nanosheets as core are fabricated by growing ZIF-8 in the presence of g-C3N4 nanosheets. Doxorubicin hydrochloride (DOX) is then loaded into the ZIF-8 shell of the core-shell nanoparticles. The combination of the chemotherapeutic effects of DOX and the PDT effect of g-C3N4 nanosheets can lead to considerably enhanced efficacy. Furthermore, the red fluorescence of DOX and the blue fluorescence of g-C3N4 nanosheets provide the additional function of dual-color imaging for monitoring the drug release process.Recently, nanoscale metal-organic frameworks (NMOFs) have started to be developed as a promising platform for bioimaging and drug delivery. On the other hand, combination therapies using multiple approaches are demonstrated to achieve much enhanced efficacy. Herein, we report, for the first time, core-shell nanoparticles consisting of a photodynamic therapeutic (PDT) agent and a MOF shell while simultaneously carrying a chemotherapeutic drug for effective combination therapy. In this work, core-shell nanoparticles of zeolitic-imadazolate framework-8 (ZIF-8) as shell embedded with graphitic carbon nitride (g-C3N4) nanosheets as core are fabricated by growing ZIF-8 in the presence of g-C3N4 nanosheets. Doxorubicin hydrochloride (DOX) is then loaded into the ZIF-8 shell of the core-shell nanoparticles. The combination of the chemotherapeutic effects of DOX

Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

KAUST Repository

Yang, Xinbo

2018-04-19

Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

International Nuclear Information System (INIS)

Wegscheider, M.

2009-01-01

The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

Phase formation, thermal stability and magnetic moment of cobalt nitride thin films

Directory of Open Access Journals (Sweden)

Rachana Gupta

2015-09-01

Full Text Available Cobalt nitride (Co-N thin films prepared using a reactive magnetron sputtering process are studied in this work. During the thin film deposition process, the relative nitrogen gas flow (RN2 was varied. As RN2 increases, Co(N, Co4N, Co3N and CoN phases are formed. An incremental increase in RN2, after emergence of Co4N phase at RN2 = 10%, results in a linear increase of the lattice constant (a of Co4N. For RN2 = 30%, a maximizes and becomes comparable to its theoretical value. An expansion in a of Co4N, results in an enhancement of the magnetic moment, to the extent that it becomes even larger than pure Co. Such larger than pure metal magnetic moment for tetra-metal nitrides (M4N have been theoretically predicted. Incorporation of N atoms in M4N configuration results in an expansion of a (relative to pure metal and enhances the itinerary of conduction band electrons leading to larger than pure metal magnetic moment for M4N compounds. Though a higher (than pure Fe magnetic moment for Fe4N thin films has been evidenced experimentally, higher (than pure Co magnetic moment is evidenced in this work.

Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

DEFF Research Database (Denmark)

Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

2017-01-01

Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

International Nuclear Information System (INIS)

Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

2012-01-01

General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB 2 , ZrB 2 , NbB 2 , CeB 6 , PrB 6 , SmB 6 , EuB 6 , LaB 6 ), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN 2 , VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN 3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

Hot pressing of uranium nitride and mixed uranium plutonium nitride

International Nuclear Information System (INIS)

Chang, J.Y.

1975-01-01

The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

Sulfur-Doped Carbon Nitride Polymers for Photocatalytic Degradation of Organic Pollutant and Reduction of Cr(VI).

Science.gov (United States)

Zheng, Yun; Yu, Zihao; Lin, Feng; Guo, Fangsong; Alamry, Khalid A; Taib, Layla A; Asiri, Abdullah M; Wang, Xinchen

2017-04-01

As a promising conjugated polymer, binary carbon nitride has attracted extensive attention as a metal-free and visible-light-responsive photocatalyst in the area of photon-involving purification of water and air. Herein, we report sulfur-doped polymeric carbon nitride microrods that are synthesized through thermal polymerization based on trithiocyanuric acid and melamine (TM) supramolecular aggregates. By tuning the polymerization temperature, a series of sulfur-doped carbon nitride microrods are prepared. The degradation of Rhodamine B (RhB) and the reduction of hexavalent chromium Cr(VI) are selected as probe reactions to evaluate the photocatalytic activities. Results show that increasing pyrolysis temperature leads to a large specific surface area, strong visible-light absorption, and accelerated electron-hole separation. Compared to bulk carbon nitride, the highly porous sulfur-doped carbon nitride microrods fabricated at 650 °C exhibit remarkably higher photocatalytic activity for degradation of RhB and reduction of Cr(VI). This work highlights the importance of self-assembly approach and temperature-control strategy in the synthesis of photoactive materials for environmental remediation.

Plasma assisted nitriding for micro-texturing onto martensitic stainless steels*

Directory of Open Access Journals (Sweden)

Katoh Takahisa

2015-01-01

Full Text Available Micro-texturing method has grown up to be one of the most promising procedures to form micro-lines, micro-dots and micro-grooves onto the mold-die materials and to duplicate these micro-patterns onto metallic or polymer sheets via stamping or injection molding. This related application requires for large-area, fine micro-texturing onto the martensitic stainless steel mold-die materials. A new method other than laser-machining, micro-milling or micro-EDM is awaited for further advancement of this micro-texturing. In the present paper, a new micro-texturing method is developed on the basis of the plasma assisted nitriding to transform the two-dimensionally designed micro-patterns to the three dimensional micro-textures in the martensitic stainless steels. First, original patterns are printed onto the surface of stainless steel molds by using the dispenser or the ink-jet printer. Then, the masked mold is subjected to high density plasma nitriding; the un-masked surfaces are nitrided to have higher hardness, 1400 Hv than the matrix hardness, 200 Hv of stainless steels. This nitrided mold is further treated by sand-blasting to selectively remove the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel mold is fabricated as a tool to duplicate these micro-patterns onto the plastic materials by the injection molding.

Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

International Nuclear Information System (INIS)

Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

2002-01-01

In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

Properties of minor actinide nitrides

International Nuclear Information System (INIS)

Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2004-01-01

The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

Experimental and computational study on the phase stability of Al-containing cubic transition metal nitrides

International Nuclear Information System (INIS)

Rovere, Florian; Mayrhofer, Paul H; Music, Denis; Ershov, Sergey; Baben, Moritz to; Schneider, Jochen M; Fuss, Hans-Gerd

2010-01-01

The phase stability of Al-containing cubic transition metal (TM) nitrides, where Al substitutes for TM (i.e. TM 1-x Al x N), is studied as a function of the TM valence electron concentration (VEC). X-ray diffraction and thermal analyses data of magnetron sputtered Ti 1-x Al x N, V 1-x Al x N and Cr 1-x Al x N films indicate increasing phase stability of cubic TM 1-x Al x N at larger Al contents and higher temperatures with increasing TM VEC. These experimental findings can be understood based on first principle investigations of ternary cubic TM 1-x Al x N with TM = Sc, Ti, V, Cr, Y, Zr and Nb where the TM VEC and the lattice strain are systematically varied. However, our experimental data indicate that, in addition to the decomposition energetics (cubic TM 1-x Al x N → cubic TMN + hexagonal AlN), future stability models have to include nitrogen release as one of the mechanisms that critically determine the overall phase stability of TM 1-x Al x N.

Plasma Nitriding of AISI 304 Stainless Steel in Cathodic and Floating Electric Potential: Influence on Morphology, Chemical Characteristics and Tribological Behavior

Science.gov (United States)

Li, Yang; He, Yongyong; Wang, Wei; Mao, Junyuan; Zhang, Lei; Zhu, Yijie; Ye, Qianwen

2018-03-01

In direct current plasma nitriding (DCPN), the treated components are subjected to a high cathodic potential, which brings several inherent shortcomings, e.g., damage by arcing and the edging effect. In active screen plasma nitriding (ASPN) processes, the cathodic potential is applied to a metal screen that surrounds the workload, and the component to be treated is placed in a floating potential. Such an electrical configuration allows plasma to be formed on the metal screen surface rather than on the component surface; thus, the shortcomings of the DCPN are eliminated. In this work, the nitrided experiments were performed using a plasma nitriding unit. Two groups of samples were placed on the table in the cathodic and the floating potential, corresponding to the DCPN and ASPN, respectively. The floating samples and table were surrounded by a steel screen. The DCPN and ASPN of the AISI 304 stainless steels are investigated as a function of the electric potential. The samples were characterized using scanning electron microscopy with energy-dispersive x-ray spectroscopy, x-ray diffraction, atomic force microscopy and transmission electron microscope. Dry sliding ball-on-disk wear tests were conducted on the untreated substrate, DCPN and ASPN samples. The results reveal that all nitrided samples successfully produced similar nitrogen-supersaturated S phase layers on their surfaces. This finding also shows the strong impact of the electric potential of the nitriding process on the morphology, chemical characteristics, hardness and tribological behavior of the DCPN and ASPN samples.

Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Energy Technology Data Exchange (ETDEWEB)

Kohli, P. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States) and Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)]. E-mail: puneet.kohli@sematech.org; Chakravarthi, S. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Jain, Amitabh [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Bu, H. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Mehrotra, M. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Dunham, S.T. [Department of Electrical Engineering, University of Washington, Seattle, WA 98195 (United States); Banerjee, S.K. [Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)

2004-12-15

A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we have investigated the effect of the silicon nitride spacer process chemistry on the boron profile in silicon and the related dose loss of B from Si into silicon dioxide. This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries. We conclude that the silicon nitride influences the concentration of hydrogen in the silicon dioxide and different nitride chemistries result in different concentrations of hydrogen in the silicon dioxide during the final source/drain anneal. The presence of H enhances the diffusivity of B in the silicon dioxide and thereby results in a significant dose loss from the Si into the silicon dioxide. In this work, we show that this dose loss can be minimized and the junction profile engineered by choosing a desirable nitride chemistry.

Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

Institute of Scientific and Technical Information of China (English)

HAN Yue-Ping; HAN Yan

2009-01-01

Physical and chemical properties of titanium oxynitride (TiOxNy) formed by low-temperature oxidation of titanium nitride (TIN) layer are investigated for advanced metal-oxide--semiconductor (MOS) gate dielectric application.TiOx Ny exhibits polycrystalline properties after the standard thermal process for MOS device fabrication,showing the preferred orientation at [200].Superior electrical properties of TiOxNy can be maintained before and after the annealing,probably due to the nitrogen incorporation in the oxide bulk and at the interface.Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.

Synthesis of nanocrystalline magnesium nitride (Mg3N2) powder using thermal plasma

International Nuclear Information System (INIS)

Kim, Dong-Wook; Kim, Tae-Hee; Park, Hyun-Woo; Park, Dong-Wha

2011-01-01

Nanocrystalline magnesium nitride (Mg 3 N 2 ) powder was synthesized from bulk magnesium by thermal plasma at atmospheric pressure. Magnesium vapor was generated through heating the bulk magnesium by DC plasma jet and reacted with ammonia gas. Injecting position and flow rates of ammonia gas were controlled to investigate an ideal condition for Mg 3 N 2 synthesis. The synthesized Mg 3 N 2 was cooled and collected on the chamber wall. Characteristics of the synthesized powders for each experimental condition were analyzed by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and thermogravity analysis (TGA). In absence of NH 3 , magnesium metal powder was formed. The synthesis with NH 3 injection in low temperature region resulted in a formation of crystalline magnesium nitride with trigonal morphology, whereas the mixture of magnesium metal and amorphous Mg 3 N 2 was formed when NH 3 was injected in high temperature region. Also, vaporization process of magnesium was discussed.

Thermal expansion of TRU nitride solid solutions as fuel materials for transmutation of minor actinides

International Nuclear Information System (INIS)

Takano, Masahide; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2009-01-01

The lattice thermal expansion of the transuranium nitride solid solutions was measured to investigate the composition dependence. The single-phase solid solution samples of (Np 0.55 Am 0.45 )N, (Pu 0.59 Am 0.41 )N, (Np 0.21 Pu 0.52 Am 0.22 Cm 0.05 )N and (Pu 0.21 Am 0.18 Zr 0.61 )N were prepared by carbothermic nitridation of the respective transuranium dioxides and nitridation of Zr metal through hydride. The lattice parameters were measured by the high temperature X-ray diffraction method from room temperature up to 1478 K. The linear thermal expansion of each sample was determined as a function of temperature. The average thermal expansion coefficients over the temperature range of 293-1273 K for the solid solution samples were 10.1, 11.5, 10.8 and 8.8 x 10 -6 K -1 , respectively. Comparison of these values with those for the constituent nitrides showed that the average thermal expansion coefficients of the solid solution samples could be approximated by the linear mixture rule within the error of 2-3%.

Compressibility measurements and phonon spectra of hexagonal transition-metal nitrides at high pressure: ε-TaN, δ-MoN, and Cr2N

International Nuclear Information System (INIS)

Soignard, Emmanuel; Shebanova, Olga; McMillan, Paul F.

2007-01-01

We report compressibility measurements for three transition metal nitrides (ε-TaN, δ-MoN, Cr 2 N) that have structures based on hexagonal arrangements of the metal atoms. The studies were performed using monochromatic synchrotron x-ray diffraction at high pressure in a diamond anvil cell. The three nitride compounds are well-known high hardness materials, and they are found to be highly incompressible. The bulk modulus values measured for ε-TaN, Cr 2 N, and δ-MoN are K 0 =288(6) GPa, 275(23) GPa, and 345(9) GPa, respectively. The data were analyzed using a linearized plot of reduced pressure (F) vs the Eulerian finite strain variable f within a third-order Birch-Murnaghan equation of state formulation. The K 0 ' values for ε-TaN and δ-MoN were 4.7(0.5) and 3.5(0.3), respectively, close to the value of K 0 ' =4 that is typically assumed in fitting compressibility data in equation of state studies using a Birch-Murnaghan equation. However, Cr 2 N was determined to have a much smaller value, K 0 ' =2.0(2.0), indicating a significantly smaller degree of structural stiffening with increased pressure. We also present Raman data for ε-TaN and δ-MoN at high pressure in order to characterize the phonon behavior in these materials. All of the Raman active modes for ε-TaN were identified using polarized spectroscopy. Peaks at low frequency are due to Ta motions, whereas modes at higher wave number contain a large component of N motion. The high frequency modes associated with Ta-N stretching vibrations are more sensitive to compression than the metal displacements occurring at lower wave number. The mode assignments can be generally extended to δ-MoN, that has a much more complex Raman spectrum. The x-ray and Raman data for ε-TaN show evidence for structural disordering occurring above 20 GPa, whereas no such change is observed for δ-MoN

A nano-engineered graphene/carbon nitride hybrid for photocatalytic hydrogen evolution

Institute of Scientific and Technical Information of China (English)

Xiaobo Li; Yao Zheng; Anthony F.Masters; Thomas Maschmeyer

2016-01-01

A metal-free photocatalytic hydrogen evolution system was successfully fabricated using heteroatom doped graphene materials as electron-transfer co-catalysts and carbon nitride as a semiconductor.The catalytic role of graphene is significantly dependent on the heteroatom dopant of the graphene,such as O,S,B,N doped/undoped graphene co-catalysts,and N-graphene shows the best catalytic hydrogen evolution rate.

Surface modification of 17-4PH stainless steel by DC plasma nitriding and titanium nitride film duplex treatment

International Nuclear Information System (INIS)

Qi, F.; Leng, Y.X.; Huang, N.; Bai, B.; Zhang, P.Ch.

2007-01-01

17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film

Steel bonded dense silicon nitride compositions and method for their fabrication

Science.gov (United States)

Landingham, Richard L.; Shell, Thomas E.

1987-01-01

A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

Nitriding of high speed steel

International Nuclear Information System (INIS)

Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

2010-01-01

Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

International Nuclear Information System (INIS)

Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

2008-01-01

We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

Solvothermal synthesis: a new route for preparing nitrides

CERN Document Server

Demazeau, G; Denis, A; Largeteau, A

2002-01-01

Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

Nitridation of U and Pu recovered in liquid Cd cathode by molten salt electrorefining of (U,Pu)N

Energy Technology Data Exchange (ETDEWEB)

Satoh, Takumi; Iwai, Takashi; Arai, Yasuo [Japan Atomic Energy Agency (Japan)

2009-06-15

Solid solutions of actinide mono-nitrides have been proposed as a candidate fuel of the accelerator-driven system (ADS) and Gen.IV-type fast reactors because the thermal conductivity and metal density are higher than those of actinide oxides and also they have high melting temperature. Pyrochemical process has several advantages over conventional wet process in treating of spent nitride fuel. One of the key technologies of the pyrochemical reprocessing of nitride fuel is the formation of the nitrides from actinides in the liquid Cd cathode. The nitridation-distillation combined method was developed and has been adopted to convert the actinides to the nitrides. In this method, the nitridation of actinides and the distillation of Cd occurred simultaneously by heating the actinide-Cd alloys in N{sub 2} gas stream. In the present study, the nitride formation behavior of U and Pu recovered in Cd cathode by molten salt electrorefining of (U,Pu)N was experimentally investigated. In addition, the nitride pellet was prepared form the powder obtained by the nitridation of U and Pu recovered in Cd cathode. (U,Pu)N (PuN = 80 mol %) was used as the starting material in the experiment. Molten salt electrorefining of (U,Pu)N pellet was carried out in the LiCl-KCl eutectic salt with 1.2 wt% PuCl{sub 3} and 0.3 wt% UCl{sub 3} of about 110 g at the constant anodic potential of -0.60 to -0.55 V vs. Ag/AgCl for about 9 hours at 773 K. After the electrorefining, about 42 % of U and Pu in the starting (U,Pu)N pellet was dissolved at the anode and recovered into the liquid Cd cathode. The recovered U-Pu-Cd alloy was heated in an alumina crucible at 973 K for 10 hours under N{sub 2} gas (99.999 %) stream (0.015 L/min). Fine black powder was recovered after heating the U-Pu-Cd alloy. The powder was identified as the single phase solid solution of (U,Pu)N by the XRD analysis. After milling in the agate mortar for 1 hour, the powder was compacted into green pellet under a pressure of about

Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

NARCIS (Netherlands)

Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

2002-01-01

Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

Deposition of single-layer and graded aluminum nitride coatings on vanadium substrates using ion-beam assisted reactive evaporation (ITER task no. ETA-EC-BLR26)

International Nuclear Information System (INIS)

Jamarani, F.; Lang, R.; Owles, R.

1994-06-01

The objective of the project has been to develop a reactive evaporation process for the fabrication of aluminum nitride coatings on pure vanadium substrates. The aluminum nitride coatings are to be used as electrical insulators on the surfaces of structural materials in contact with liquid metal coolants. (author). 9 refs., 2 tabs., 5 figs

Ternary nitrides for hydrogen storage: Li-B-N, Li-Al-N and Li-Ga-N systems

International Nuclear Information System (INIS)

Langmi, Henrietta W.; McGrady, G. Sean

2008-01-01

This paper reports an investigation of hydrogen storage performance of ternary nitrides based on lithium and the Group 13 elements boron, aluminum and gallium. These were prepared by ball milling Li 3 N together with the appropriate Group 13 nitride-BN, AlN or GaN. Powder X-ray diffraction of the products revealed that the ternary nitrides obtained are not the known Li 3 BN 2 , Li 3 AlN 2 and Li 3 GaN 2 phases. At 260 deg. C and 30 bar hydrogen pressure, the Li-Al-N ternary system initially absorbed 3.7 wt.% hydrogen, although this is not fully reversible. We observed, for the first time, hydrogen uptake by a pristine ternary nitride of Li and Al synthesized from the binary nitrides of the metals. While the Li-Ga-N ternary system also stored a significant amount of hydrogen, the storage capacity for the Li-B-N system was near zero. The hydrogenation reaction is believed to be similar to that of Li 3 N, and the enthalpies of hydrogen absorption for Li-Al-N and Li-Ga-N provide evidence that AlN and GaN, as well as the ball milling process, play a significant role in altering the thermodynamics of Li 3 N

Influence of the ion nitriding temperature in the wear resistance of AISI H13 tool steel

International Nuclear Information System (INIS)

Heck, Stenio Cristaldo; Fernandes, Frederico Augusto Pires; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Totten, George Edward

2010-01-01

The AISI H13 tool steel for hot work is the most used in its category. This steel was developed for injection molds and extrusion of hot metals as well as for conformation in hot presses and hammers. Plasma nitriding can improve significantly the surface properties of these steels, but the treatments conditions, such as temperature, must be optimized. In this work the influence of nitriding treatment temperature on the wear behavior of this steel is investigated. Samples of AISI H13 steel were quenched and tempered and then ion nitrided in the temperatures of 450, 550 and 650 deg C, at 4mbar pressure, during 5 hours. Samples of the treated material were characterized by optical microscopy, Vickers microhardness, x-ray analysis and wear tests. Plasma nitriding formed hard diffusion zones in all the treated samples. White layers were formed in samples treated at 550 deg C and 650 deg C. The treatment temperature of 450 deg C produced the highest hardness. Treatment temperature showed great influence in the diffusion layer thickness. X-ray analysis indicated the formation of the Fe_3N, Fe_4N and CrN phases for all temperatures, but with different concentrations. Nitriding increased significantly the AISI H13 wear resistance. (author)

Microstructural characterization of an AISI-SAE 4140 steel without nitridation and nitrided

International Nuclear Information System (INIS)

Medina F, A.; Naquid G, C.

2000-01-01

It was micro structurally characterized an AISI-SAE 4140 steel before and after of nitridation through the nitridation process by plasma post-unloading microwaves through Optical microscopy (OM), Scanning electron microscopy (SEM) by means of secondary electrons and retrodispersed, X-ray diffraction (XRD), Energy dispersion spectra (EDS) and mapping of elements. (Author)

Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2015-09-01

ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

Directory of Open Access Journals (Sweden)

Mahmoud Hassan R. S.

2014-07-01

Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

Toward Edge-Defined Holey Boron Nitride Nanosheets

Science.gov (United States)

Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

2015-01-01

"Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides.

Science.gov (United States)

Zhang, Kehao; Jariwala, Bhakti; Li, Jun; Briggs, Natalie C; Wang, Baoming; Ruzmetov, Dmitry; Burke, Robert A; Lerach, Jordan O; Ivanov, Tony G; Haque, Md; Feenstra, Randall M; Robinson, Joshua A

2017-12-21

Two and three-dimensional (2D/3D) hybrid materials have the potential to advance communication and sensing technologies by enabling new or improved device functionality. To date, most 2D/3D hybrid devices utilize mechanical exfoliation or post-synthesis transfer, which can be fundamentally different from directly synthesized layers that are compatible with large scale industrial needs. Therefore, understanding the process/property relationship of synthetic heterostructures is priority for industrially relevant material architectures. Here we demonstrate the scalable synthesis of molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) via metal organic chemical vapor deposition (MOCVD) on gallium nitride (GaN), and elucidate the structure, chemistry, and vertical transport properties of the 2D/3D hybrid. We find that the 2D layer thickness and transition metal dichalcogenide (TMD) choice plays an important role in the transport properties of the hybrid structure, where monolayer TMDs exhibit direct tunneling through the layer, while transport in few layer TMDs on GaN is dominated by p-n diode behavior and varies with the 2D/3D hybrid structure. Kelvin probe force microscopy (KPFM), low energy electron microscopy (LEEM) and X-ray photoelectron spectroscopy (XPS) reveal a strong intrinsic dipole and charge transfer between n-MoS 2 and p-GaN, leading to a degraded interface and high p-type leakage current. Finally, we demonstrate integration of heterogeneous 2D layer stacks of MoS 2 /WSe 2 on GaN with atomically sharp interface. Monolayer MoS 2 /WSe 2 /n-GaN stacks lead to near Ohmic transport due to the tunneling and non-degenerated doping, while few layer stacking is Schottky barrier dominated.

Metal-free spin and spin-gapless semiconducting heterobilayers: monolayer boron carbonitrides on hexagonal boron nitride.

Science.gov (United States)

Pan, Hongzhe; Zhang, Hongyu; Sun, Yuanyuan; Ding, Yingchun; Chen, Jie; Du, Youwei; Tang, Nujiang

2017-06-07

The interfaces between monolayer boron carbonitrides and hexagonal boron nitride (h-BN) play an important role in their practical applications. Herein, we respectively investigate the structural and electronic properties of two metal-free heterobilayers constructed by vertically stacking two-dimensional (2D) spintronic materials (B 4 CN 3 and B 3 CN 4 ) on a h-BN monolayer from the viewpoints of lattice match and lattice mismatch models using density functional calculations. It is found that both B 4 CN 3 and B 3 CN 4 monolayers can be stably adsorbed on the h-BN monolayer due to the van der Waals interactions. Intriguingly, we demonstrate that the bipolar magnetic semiconductor (BMS) behavior of the B 4 CN 3 layer and the spin gapless semiconductor (SGS) property of the B 3 CN 4 layer can be well preserved in the B 4 CN 3 /BN and B 3 CN 4 /BN heterobilayers, respectively. The magnetic moments and spintronic properties of the two systems originate mainly from the 2p z electrons of the carbon atoms in the B 4 CN 3 and B 3 CN 4 layers. Furthermore, the BMS behavior of the B 4 CN 3 /BN bilayer is very robust while the electronic property of the B 3 CN 4 /BN bilayer is sensitive to interlayer couplings. These theoretical results are helpful both in understanding the interlayer coupling between B 4 CN 3 or B 3 CN 4 and h-BN monolayers and in providing a possibility of fabricating 2D composite B 4 CN 3 /BN and B 3 CN 4 /BN metal-free spintronic materials theoretically.

Nitrides and carbides of molybdenum and tungsten with high specific-surface area: their synthesis, structure, and catalytic properties

International Nuclear Information System (INIS)

Volpe, L.

1985-01-01

Temperature-programmed reactions between trioxides of molybdenum or tungsten and ammonia provide a new method to synthesize dimolybdenum and ditungsten nitrides with specific surface areas to two-hundred-and-twenty and ninety-one square meters per gram, respectively. These are the highest values on record for any unsupported metallic powders. They correspond to three-four nonometer particles. The reaction of molybdenum trioxide with ammonia is topotactic in the sense that one-zero-zero planes of dimolybdenum nitride are parallel to zero-one-zero planes of molybdenum trioxide. As the trioxide transforms, it passes through an oxynitride intermediate with changing bulk structure and increasing surface area and extent of reduction. The nitride product consists of platelets, pseudomorphous with the original trioxide, which can be regarded as highly porous defect single crystals. By treating small particles of dimolybdenum or ditungsten nitride with methane-dihydrogen mixtures it is possible to replace interstitial nitrogen atoms by carbon atoms, without sintering, and thus to prepare carbides of molybdenum and tungsten with very high specific surface areas. Molybdenum nitride powders catalyze ammonia synthesis. A pronounced increase in the catalytic activity with increasing particle size confirms the structure-sensitive character of this reaction

Effect of explosion hardening on the properties of the near-surface layer of glow-discharged nitrided 33H3MF steel

International Nuclear Information System (INIS)

Rudnicki, J.; Fleszar, A.; Wierzchon, T.; Maranda, A.; Nowaczewski, J.

1999-01-01

The study was concerned with the effect of explosion hardening of 33H3MF steel, realized by the impact of the detonation products of a metallic plate driven by the detonation of an explosive plastic material, upon the microhardness and thickness of the nitrided layers forming during the glow discharge assisted nitridation process. Nitrided layers containing a compound zone, diffusion layers and layers with braunite content were formed on explosion-hardened steel surfaces. The corrosion resistance of the nitrided layers thus obtained was compared with that of the layers formed on non-hardened surfaces and on non-hardened and nitrided surfaces. The layers examined have a higher corrosion resistance than the starting material, but lower than the nitrided layers formed without the explosive load. The impact strength of the steel samples was examined before and after the explosion hardening and also after glow discharge assisted nitriding. It has been found that the explosion hardening followed by nitriding increases the impact strength, which is an advantageous effect. This also gives evidence that the changes in the hardness and structure of the samples examined, which are only observed in the layers whose thickness falls between 0.1 and 1.5 mm do not affect the notch present on the sample surface and thus have no influence upon the character of the sample fracture. (author)

Nitride fuels irradiation performance data base

International Nuclear Information System (INIS)

Brozak, D.E.; Thomas, J.K.; Peddicord, K.L.

1987-01-01

An irradiation performance data base for nitride fuels has been developed from an extensive literature search and review that emphasized uranium nitride, but also included performance data for mixed nitrides [(U,Pu)N] and carbonitrides [(U,Pu)C,N] to increase the quantity and depth of pin data available. This work represents a very extensive effort to systematically collect and organize irradiation data for nitride-based fuels. The data base has many potential applications. First, it can facilitate parametric studies of nitride-based fuels to be performed using a wide range of pin designs and operating conditions. This should aid in the identification of important parameters and design requirements for multimegawatt and SP-100 fuel systems. Secondly, the data base can be used to evaluate fuel performance models. For detailed studies, it can serve as a guide to selecting a small group of pin specimens for extensive characterization. Finally, the data base will serve as an easily accessible and expandable source of irradiation performance information for nitride fuels

Microhardness and microplasticity of zirconium nitride

International Nuclear Information System (INIS)

Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

1978-01-01

To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

Surface analysis in steel nitrides by using Moessbauer spectroscopy

International Nuclear Information System (INIS)

Figueiredo, R.S. de.

1991-07-01

The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

[Cr(N)(acac)2]: A simple chromium nitride complex and its reactivity towards late transition metals

DEFF Research Database (Denmark)

Hedegaard, Erik Donovan; Schau-Magnussen, Magnus; Bendix, Jesper

2011-01-01

A new simple chromium(V) nitride complex, Cr(N)(acac)2 (1) has been prepared by nitrogen atom transfer. X-ray crystallography shows a short Cr-N bond at 1.5564(11) Å and equatorial Cr-O distances in the range 1.9387(9) – 1.9485(9) Å. 1 reacts as a p-backbonding ligand ......A new simple chromium(V) nitride complex, Cr(N)(acac)2 (1) has been prepared by nitrogen atom transfer. X-ray crystallography shows a short Cr-N bond at 1.5564(11) Å and equatorial Cr-O distances in the range 1.9387(9) – 1.9485(9) Å. 1 reacts as a p-backbonding ligand ...

Enhancement of the oxygen reduction on nitride stabilized pt-M (M=Fe, Co, and Ni) core–shell nanoparticle electrocatalysts

KAUST Repository

Kuttiyiel, Kurian A.; Choi, YongMan; Hwang, Sun-Mi; Park, Gu-Gon; Yang, Tae-Hyun; Su, Dong; Sasaki, Kotaro; Liu, Ping; Adzic, Radoslav R.

2015-01-01

Given the harsh operating conditions in hydrogen/oxygen fuel cells, the stability of catalysts is one of the critical questions affecting their commercialization. We describe a distinct class of oxygen reduction (ORR) core–shell electrocatalysts comprised of nitride metal cores enclosed by thin Pt shells that is easily synthesized. The synthesis is reproducible and amenable to scale up. Our theoretical analysis and the experimental data indicate that metal nitride nanoparticle cores could significantly enhance the ORR activity as well as the durability of the core–shell catalysts as a consequence of combined geometrical, electronic and segregation effects on the Pt shells. In addition to its fuel cells application, this class of catalysts holds promise to significantly contribute in resolving the problem of platinum scarcity and furthermore indicates the guidelines for future research and development.

Enhancement of the oxygen reduction on nitride stabilized pt-M (M=Fe, Co, and Ni) core–shell nanoparticle electrocatalysts

KAUST Repository

Kuttiyiel, Kurian A.

2015-04-01

Given the harsh operating conditions in hydrogen/oxygen fuel cells, the stability of catalysts is one of the critical questions affecting their commercialization. We describe a distinct class of oxygen reduction (ORR) core–shell electrocatalysts comprised of nitride metal cores enclosed by thin Pt shells that is easily synthesized. The synthesis is reproducible and amenable to scale up. Our theoretical analysis and the experimental data indicate that metal nitride nanoparticle cores could significantly enhance the ORR activity as well as the durability of the core–shell catalysts as a consequence of combined geometrical, electronic and segregation effects on the Pt shells. In addition to its fuel cells application, this class of catalysts holds promise to significantly contribute in resolving the problem of platinum scarcity and furthermore indicates the guidelines for future research and development.

Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Science.gov (United States)

Wang, George T [Albuquerque, NM; Li, Qiming [Albuquerque, NM; Creighton, J Randall [Albuquerque, NM

2010-06-29

A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

Charge carrier transport properties in layer structured hexagonal boron nitride

Directory of Open Access Journals (Sweden)

T. C. Doan

2014-10-01

Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

Alloy Effects on the Gas Nitriding Process

Science.gov (United States)

Yang, M.; Sisson, R. D.

2014-12-01

Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

Magnetic behavior study of samarium nitride using density functional theory

Science.gov (United States)

Som, Narayan N.; Mankad, Venu H.; Dabhi, Shweta D.; Patel, Anjali; Jha, Prafulla K.

2018-02-01

In this work, the state-of-art density functional theory is employed to study the structural, electronic and magnetic properties of samarium nitride (SmN). We have performed calculation for both ferromagnetic and antiferromagnetic states in rock-salt phase. The calculated results of optimized lattice parameter and magnetic moment agree well with the available experimental and theoretical values. From energy band diagram and electronic density of states, we observe a half-metallic behaviour in FM phase of rock salt SmN in while metallicity in AFM I and AFM III phases. We present and discuss our current understanding of the possible half-metallicity together with the magnetic ordering in SmN. The calculated phonon dispersion curves shows dynamical stability of the considered structures. The phonon density of states and Eliashberg functional have also been analysed to understand the superconductivity in SmN.

Ion nitridation - physical and technological aspects

International Nuclear Information System (INIS)

Elbern, A.W.

1980-01-01

Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

Silicon nitride-fabrication, forming and properties

International Nuclear Information System (INIS)

Yehezkel, O.

1983-01-01

This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

Energy Technology Data Exchange (ETDEWEB)

Kharlamov, Alexey [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Bondarenko, Marina, E-mail: mebondarenko@ukr.net [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine); Kharlamova, Ganna [Taras Shevchenko National University of Kiev, Volodymyrs' ka St. 64, 01601 Kiev (Ukraine); Fomenko, Veniamin [Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky St. 3, 03680 Kiev (Ukraine)

2016-09-15

For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.

Topotactic synthesis of vanadium nitride solid foams

International Nuclear Information System (INIS)

Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

1993-01-01

Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

Microstructure and mechanical properties of silicon nitride structural ceramics of silicon nitride

International Nuclear Information System (INIS)

Strohaecker, T.R.; Nobrega, M.C.S.

1989-01-01

The utilization of direct evaluation technic of tenacity for fracturing by hardness impact in silicon nitride ceramics is described. The microstructure were analysied, by Scanning Electron Microscopy, equiped with a microanalysis acessory by X ray energy dispersion. The difference between the values of K IC measure for two silicon nitride ceramics is discussed, in function of the microstructures and the fracture surfaces of the samples studied. (C.G.C.) [pt

Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

International Nuclear Information System (INIS)

Calleja, E.; Ristic, J.; Fernandez-Garrido, S.; Sanchez-Garcia, M.A.; Grandal, J.; Cerutti, L.; Trampert, A.; Jahn, U.; Sanchez, G.; Griol, A.; Sanchez, B.

2007-01-01

The growth conditions to achieve group-III-nitride nanocolumns and nanocolumnar heterostructures by plasma-assisted molecular beam epitaxy are studied. The evolution of the nanocolumnar morphology with the growth conditions is determined for (Ga,Al)N and (In,Ga)N nanocolumns. The mechanisms behind the nanocolumnar growth under high N-rich conditions are clarified in the sense that no seeding or catalysts are required, as it is the case in the vapour-liquid-solid model that applies to most nanocolumns grown by metal organic chemical vapour deposition, either with group-III nitrides, II-VI or III-V compounds. Some examples of nanocolumnar heterostructures are given, like quantum disks and cylindrical nanocavities. Preliminary results on the growth of arrays of ordered GaN nanocolumns are reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Anti corrosion layer for stainless steel in molten carbonate fuel cell - comprises phase vapour deposition of titanium nitride, aluminium nitride or chromium nitride layer then oxidising layer in molten carbonate electrolyte

DEFF Research Database (Denmark)

2000-01-01

Forming an anticorrosion protective layer on a stainless steel surface used in a molten carbonate fuel cell (MCFC) - comprises the phase vapour deposition (PVD) of a layer comprising at least one of titanium nitride, aluminium nitride or chromium nitride and then forming a protective layer in situ...

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.

2011-11-14

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

International Nuclear Information System (INIS)

Syarifah, Ratna Dewi; Suud, Zaki

2015-01-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

Science.gov (United States)

Syarifah, Ratna Dewi; Suud, Zaki

2015-09-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

Science.gov (United States)

Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

2018-04-18

In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

Calculation and experimental investigation of multi-component ceramic systems

International Nuclear Information System (INIS)

Rother, M.

1994-12-01

This work shows a way to combine thermodynamic calculations and experiments in order to get useful information on the constitution of metal/non-metal systems. Many data from literature are critically evaluated and used as a basis for experiments and calculations. The following multi-component systems are treated: 1. Multi-component systems of 'ceramic' materials with partially metallic bonding (carbides, nitrides, oxides, borides, carbonitrides, borocarbides, oxinitrides of the 4-8th transition group metals) 2. multi-component systems of non-metallic materials with dominant covalent bonding (SiC, Si 3 N 4 , SiB 6 , BN, Al 4 C 3 , Be 2 C) 3. multi-component systems of non-metallic materials with dominant heteropolar bonding (Al 2 O 3 , TiO 2 , BeO, SiO 2 , ZrO 2 ). The interactions between 1. and 2., 2. and 3., 1. and 3. are also considered. The latest commercially available programmes for the calculation of thermodynamical equilibria and phase diagrams are evaluated and compared considering their facilities and limits. New phase diagrams are presented for many presently unknown multi-component systems; partly known systems are completed on the basis of selected thermodynamic data. The calculations are verified by experimental investigations (metallurgical and powder technology methods). Altogether 690 systems are evaluated, 126 are calculated for the first time and 52 systems are experimentally verified. New data for 60 ternary phases are elaborated by estimating the data limits for the Gibbs energy values. A synthesis of critical evaluation of literature, calculations and experiments leads to new important information about equilibria and reaction behaviour in multi-component systems. This information is necessary to develop new stable and metastable materials. (orig./MM) [de

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

International Nuclear Information System (INIS)

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-01-01

We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

Toward an Aqueous Solar Battery: Direct Electrochemical Storage of Solar Energy in Carbon Nitrides.

Science.gov (United States)

Podjaski, Filip; Kröger, Julia; Lotsch, Bettina V

2018-03-01

Graphitic carbon nitrides have emerged as an earth-abundant family of polymeric materials for solar energy conversion. Herein, a 2D cyanamide-functionalized polyheptazine imide (NCN-PHI) is reported, which for the first time enables the synergistic coupling of two key functions of energy conversion within one single material: light harvesting and electrical energy storage. Photo-electrochemical measurements in aqueous electrolytes reveal the underlying mechanism of this "solar battery" material: the charge storage in NCN-PHI is based on the photoreduction of the carbon nitride backbone and charge compensation is realized by adsorption of alkali metal ions within the NCN-PHI layers and at the solution interface. The photoreduced carbon nitride can thus be described as a battery anode operating as a pseudocapacitor, which can store light-induced charge in the form of long-lived, "trapped" electrons for hours. Importantly, the potential window of this process is not limited by the water reduction reaction due to the high intrinsic overpotential of carbon nitrides for hydrogen evolution, potentially enabling new applications for aqueous batteries. Thus, the feasibility of light-induced electrical energy storage and release on demand by a one-component light-charged battery anode is demonstrated, which provides a sustainable solution to overcome the intermittency of solar radiation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical characterization of gallium nitride

NARCIS (Netherlands)

Kirilyuk, Victoria

2002-01-01

Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

2007-08-01

The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

International Nuclear Information System (INIS)

Nguyen, S.V.; Kerbaugh, M.

1988-01-01

This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

Nucleation of iron nitrides during gaseous nitriding of iron; the effect of a preoxidation treatment

DEFF Research Database (Denmark)

Friehling, Peter B.; Poulsen, Finn Willy; Somers, Marcel A.J.

2001-01-01

grains. On prolonged nitriding, immediate nucleation at the surface of iron grains becomes possible. Calculated incubation times for the nucleation of gamma'-Fe4N1-x during nitriding are generally longer than those observed experimentally in the present work. The incubation time is reduced dramatically...

RF plasma nitriding of severely deformed iron-based alloys

International Nuclear Information System (INIS)

Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

2003-01-01

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

Science.gov (United States)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

2015-03-15

A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

Structure-chemical and metallurgical investigations in boride- and boron nitride systems

International Nuclear Information System (INIS)

Smid, I.

1987-01-01

Thermodynamic phase equilibria in the systems (Ti, Zv, Hf)-B-N were determined in an isothermal cut at 1500 O C and 1 atm. The phase field separation is dominated by the high stability of the metal mononitrides and metal diborides. No ternery compounds were found. There are varying solubilities of B and N in the nitrides and borides. The system Cr-B-N was investigated at 1000 O C under 1 atm argon and vacuum, and at 1400 O C at 1 atm argon and 1 atm nitrogen. For the system Mn-B-N the phase field separation was determined at 900 O C under 1 atm Ar and under vacuum. The properties of hard metals with various binding phases and TiBr as hard constituents were investigated. 6 refs., 6 figs., 6 tabs. (qui)

Inorganic and Metallic Nanotubular Materials Recent Technologies and Applications

CERN Document Server

Kijima, Tsuyoshi

2010-01-01

This book describes the synthesis, characterization and applications of inorganic and metallic nanotubular materials. It cover a wide variety of nanotubular materials excluding carbon nanotubes, ranging from metal oxides, sulfides and nitrides such as titanium oxide, tungsten sulfide, and boron nitride, as well as platinum and other noble-metals to unique nanotubes consisting of water, graphene or fullerene. Based on their structural and compositional characteristics, these nanotubular materials are of importance for their potential applications in electronic devices, photocatalysts, dye-sensitized solar cells, nanothermometers, electrodes for fuel cells and batteries, sensors, and reinforcing fillers for plastics, among others. Such materials are also having a great impact on future developments, including renewable-energy sources as well as highly efficient energy-conversion and energy-saving technologies. This book will be of particular interest to experts in the fields of nanotechnology, material science ...

Single-layer graphene on silicon nitride micromembrane resonators

Energy Technology Data Exchange (ETDEWEB)

Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2014-02-07

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

Low Working-Temperature Acetone Vapor Sensor Based on Zinc Nitride and Oxide Hybrid Composites.

Science.gov (United States)

Qu, Fengdong; Yuan, Yao; Guarecuco, Rohiverth; Yang, Minghui

2016-06-01

Transition-metal nitride and oxide composites are a significant class of emerging materials that have attracted great interest for their potential in combining the advantages of nitrides and oxides. Here, a novel class of gas sensing materials based on hybrid Zn3 N2 and ZnO composites is presented. The Zn3 N2 /ZnO (ZnNO) composites-based sensor exhibits selectivity and high sensitivity toward acetone vapor, and the sensitivity is dependent on the nitrogen content of the composites. The ZnNO-11.7 described herein possesses a low working temperature of 200 °C. The detection limit (0.07 ppm) is below the diabetes diagnosis threshold (1.8 ppm). In addition, the sensor shows high reproducibility and long-term stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Waveguide silicon nitride grating coupler

Science.gov (United States)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Modeling the Gas Nitriding Process of Low Alloy Steels

Science.gov (United States)

Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

2013-07-01

The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

International Nuclear Information System (INIS)

Mitchell, D.R.G.; Stott, F.H.

1992-01-01

A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

Surface modification of titanium by plasma nitriding

Directory of Open Access Journals (Sweden)

Kapczinski Myriam Pereira

2003-01-01

Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

Simulation of the Nitriding Process

Science.gov (United States)

Krukovich, M. G.

2004-01-01

Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

A review of oxide, silicon nitride, and silicon carbide brazing

International Nuclear Information System (INIS)

Santella, M.L.; Moorhead, A.J.

1987-01-01

There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

Innovative boron nitride-doped propellants

Directory of Open Access Journals (Sweden)

Thelma Manning

2016-04-01

Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

The encapsulation of trimetallic nitride clusters in fullerene cages

International Nuclear Information System (INIS)

Dorn, H.C.; Stevenson, S.; Craft, J.; Cromer, F.; Duchamp, J.; Rice, G.; Glass, T.; Harich, K.; Fowler, P.W.; Heine, T.; Hajdu, E.; Bible, R.; Olmstead, M.M.; Maitra, K.; Fisher, A.J.; Balch, A.L.

2000-01-01

The Kratschmer-Huffman electric-arc generator typically produces endohedral metallofullerenes in low yields with a wide array of different products, but the introduction of nitrogen leads to a new family of encapsulates. A family of endohedral metallofullerenes A n B 3-n N at C 2n (n=0-3, x=34, 39, and 40) where A and B are Group III and rare-earth metals is formed by a trimetallic nitride template (TNT) process in relatively high yields. The archetypal representative of this new class is the stable endohedral metallofullerene, Sc 3 N at C 80 containing a triscandium nitride cluster encapsulated in an icosahedron (I h ), C 80 cage. The Sc 3 N at C 80 is formed in yields even exceeding empty-cage C 84 . Other prominent scandium TNT members are Sc 3 N at C 68 and Sc 3 N at C 78 . The former Sc 3 N at C 68 molecule represents an exception to the well known isolated pentagon rule (IPR). These new molecules were purified by chromatography with corresponding characterization by various spectroscopic approaches. In this paper we focus on the characterization and properties of this fascinating new class of materials

One-step route to a hybrid TiO2/TixW1−xN nanocomposite by in situ selective carbothermal nitridation

Directory of Open Access Journals (Sweden)

Zoë Schnepp, Martin J Hollamby, Masahiko Tanaka, Yoshitaka Matsushita, Yoshio Katsuya and Yoshio Sakka

2012-01-01

Full Text Available Metal oxide/nitride nanocomposites have many existing and potential applications, e.g. in energy conversion or ammonia synthesis. Here, a hybrid oxide/nitride nanocomposite (anatase/TixW1−xN was synthesized by an ammonia-free sol–gel route. Synchrotron x-ray diffraction, complemented with electron microscopy and thermogravimetric analysis, was used to study the structure, composition and mechanism of formation of the nanocomposite. The nanocomposite contained nanoparticles (<5 nm diameter of two highly intermixed phases. This was found to arise from controlled nucleation and growth of a single oxide intermediate from the gel precursor, followed by phase separation and in situ selective carbothermal nitridation. Depending on the preparation conditions, the composition varied from anatase/TixW1−xN at low W content to an isostructural mixture of Ti-rich and W-rich TixW1−xN at high W content. In situ selective carbothermal nitridation offers a facile route to the synthesis of nitride-oxide nanocomposites. This conceptually new approach is a significant advance from previous methods, which generally require ammonolysis of a pre-synthesized oxide.

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

Energy Technology Data Exchange (ETDEWEB)

Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2014-02-03

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

Application of metal oxide refractories for melting and casting reactive metals

International Nuclear Information System (INIS)

Jessen, N.C. Jr.; Holcombe, C.E. Jr.; Townsend, A.B.

1979-01-01

Extensive investigations have been conducted to develop metal oxide refractories for containment of molten uranium and uranium alloys. Since uranium and uranium alloys are readily susceptable to the formation of complex oxides, carbides, nitrides, intermetallic compounds, and suboxide reactions, severe problems exist for the production of quality castings. These contamination reactions are dependent on temperature, pressure, and molten metal interfacial reactions. The need for high purity metals to meet specification repeatedly has resulted in the development of improved metal oxide refractories and sophisticated furnace controls. Applications of Y 2 O 3 for use as a crucible and mold coating, precision molds and cores, and high temperature castable ceramics are discussed. Experimental results on melt impurity levels, thermal controls during melting, surface interactions and casting quality are presented

Characteristics of the epitaxy of InGaN-based light-emitting diodes grown by nanoscale epitaxial lateral overgrowth using a nitrided titanium buffer layer

International Nuclear Information System (INIS)

Shieh, Chen-Yu; Li, Zhen-Yu; Chang, Jenq-Yang; Chi, Gou-Chung

2015-01-01

In this work, a buffer layer of nitrided titanium (Ti) achieved through the nitridation of a Ti metal layer on a sapphire substrate was used for the epitaxial growth of InGaN-based light-emitting diodes (LEDs) achieved by low pressure metal-organic chemical vapor deposition. The effect of in-situ Ti metal nitridation on the performance of these InGaN-based LEDs was then investigated. It was very clear that the use of the nitrided Ti buffer layer (NTBL) induced the formation of a nanoscale epitaxial lateral overgrowth layer during the epitaxial growth. When evaluated by Raman spectroscopy, this epi-layer exhibited large in-plane compressive stress releasing with a Raman shift value of 567.9 cm -1 . Cathodoluminescence spectroscopy and transmission electron microscopy results indicated that the InGaN-based LEDs with an NTBL have improved crystal quality, with a low threading dislocations density being yielded via the strain relaxation in the InGaN-based LEDs. Based on the results mentioned above, the electroluminescence results indicate that the light performance of InGaN-based LEDs with an NTBL can be enhanced by 45% and 42% at 20 mA and 100 mA, respectively. These results suggest that the strain relaxation and quality improvement in the GaN epilayer could be responsible for the enhancement of emission power. - Highlights: • The crystal-quality of InGaN-based LEDs with NTBL by NELOG was improved. • The InGaN-based LEDs with NTBL have strain releases by NELOG. • The optical properties of InGaN-based LEDs were shown by CL and EL measurements

Tribological Characteristic of Titanium Alloy Surface Layers Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Lisiecki A.

2016-06-01

Full Text Available In order to improve the tribological properties of titanium alloy Ti6Al4V composite surface layers Ti/TiN were produced during laser surface gas nitriding by means of a novel high power direct diode laser with unique characteristics of the laser beam and a rectangular beam spot. Microstructure, surface topography and microhardness distribution across the surface layers were analyzed. Ball-on-disk tests were performed to evaluate and compare the wear and friction characteristics of surface layers nitrided at different process parameters, base metal of titanium alloy Ti6Al4V and also the commercially pure titanium. Results showed that under dry sliding condition the commercially pure titanium samples have the highest coefficient of friction about 0.45, compared to 0.36 of titanium alloy Ti6Al4V and 0.1-0.13 in a case of the laser gas nitrided surface layers. The volume loss of Ti6Al4V samples under such conditions is twice lower than in a case of pure titanium. On the other hand the composite surface layer characterized by the highest wear resistance showed almost 21 times lower volume loss during the ball-on-disk test, compared to Ti6Al4V samples.

Humidity effects on the electrical properties of hexagonal boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Soltani, A. [Institut d' Electronique, de Microelectronique et de Nanotechnologie/CNRS UMR 8520, Cite Scientifique, Avenue Poincare, 59652 Villeneuve d' Ascq (France)]. E-mail: ali.soltani@iemn.univ-lille1.fr; Thevenin, P. [Laboratoire Materiaux Optiques Photonique et Systemes/CNRS FRE 2304, Universite de Metz and Supelec, 2 rue Edouard Belin, 57070 Metz (France); Bakhtiar, H. [Faculty of Science, Physics Department, Technology University of Malaysia, Karung Berkunci 791, 80990, Johor Bahru, Johor (Malaysia); Bath, A. [Laboratoire Materiaux Optiques Photonique et Systemes/CNRS FRE 2304, Universite de Metz and Supelec, 2 rue Edouard Belin, 57070 Metz (France)]. E-mail: bath@metz.supelec.fr

2005-01-03

Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The films proved to be thermally stable up to 1370 K. Current-voltage measurements were performed, as a function of humidity, using metal-insulator-semiconductor and metal-insulator-metal structures. Typical resistivities were found in the range 10{sup 13}-10{sup 14} {omega} cm in dry air and exhibit high sensitivity against humidity. The influence of the mean orientation of the c-axis of the BN films was considered. Sawtooth voltage pulse trains were also applied. Threshold switching phenomena were observed, but only in atmosphere containing humidity. The values of the switching voltages depend strongly on the relative humidity (RH), on the characteristics of the applied sawtooth voltage pulse trains, as well as on the nature of the metallic electrode.

A micro-spectroscopy study on the influence of chemical residues from nanofabrication on the nitridation chemistry of Al nanopatterns

Energy Technology Data Exchange (ETDEWEB)

Qi, B., E-mail: bing@raunvis.hi.is [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Olafsson, S. [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Zakharov, A.A. [MAX-lab, Lund University, S-22100 Lund (Sweden); Agnarsson, B. [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Department of Applied Physics, Chalmers University of Technology, S-41296 Gothenburg (Sweden); Gislason, H.P. [Physics Department, Science Institute, University of Iceland, Dunhaga 3,107 Reykjavik (Iceland); Goethelid, M. [Materialfysik, MAP, ICT, KTH, ELECTRUM 229, 16440 Kista (Sweden)

2012-03-01

We applied spatially resolved photoelectron spectroscopy implemented with an X-ray photoemission electron microscopy (XPEEM) using soft X-ray synchrotron radiation to identify the compositional and morphological inhomogeneities of a SiO{sub 2}/Si substrate surface nanopatterned with Al before and after nitridation. The nanofabrication was conducted by a polymethylmethacrylate (PMMA)-based e-beam lithography and a fluorine-based reactive ion etching (RIE), followed by Al metalization and acetone lift-off. Three types of chemical residues were identified before nitridation: (1) fluorocarbons produced and accumulated mainly during RIE process on the sidewalls of the nanopatterns; (2) a thick Al-bearing PMMA layer and/or (3) a thin PMMA residue layer owing to unsuccessful or partial lift-off of the e-beam unexposed PMMA between the nanopatterns. The fluorocarbons actively influenced the surface chemical composition of the nanopatterns by forming Al-F compounds. After nitridation, in the PMMA residue-free area, the Al-F compounds on the sidewalls were decomposed and transformed to AlN. The PMMA residues between the nanopatterns had no obvious influence on the surface chemical composition and nitridation properties of the Al nanopatterns. They were only partially decomposed by the nitridation. The regional surface morphology of the nanopatterns revealed by the secondary electron XPEEM was consistent with the scanning electron microscopy results.

Method of preparation of uranium nitride

Science.gov (United States)

Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

2013-07-09

Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

Microstructural Characterization of Low Temperature Gas Nitrided Martensitic Stainless Steel

DEFF Research Database (Denmark)

Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

2015-01-01

The present work presents microstructural investigations of the surface zone of low temperature gas nitrided precipitation hardening martensitic stainless steel AISI 630. Grazing incidence X-ray diffraction was applied to investigate the present phases after successive removal of very thin sections...... of the sample surface. The development of epsilon nitride, expanded austenite and expanded martensite resulted from the low temperature nitriding treatments. The microstructural features, hardness and phase composition are discussed with emphasis on the influence of nitriding duration and nitriding potential....

Pyrochemical reprocessing of nitride fuel

International Nuclear Information System (INIS)

Nakazono, Yoshihisa; Iwai, Takashi; Arai, Yasuo

2004-01-01

Electrochemical behavior of actinide nitrides in LiCl-KCl eutectic melt was investigated in order to apply pyrochemical process to nitride fuel cycle. The electrode reaction of UN and (U, Nd)N was examined by cyclic voltammetry. The observed rest potential of (U, Nd)N depended on the equilibrium of U 3+ /UN and was not affected by the addition of NdN of 8 wt.%. (author)

Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

Science.gov (United States)

Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

2018-01-01

We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.

Fusion bonding of silicon nitride surfaces

DEFF Research Database (Denmark)

Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

2011-01-01

While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Plasma nitridation optimization for sub-15 A gate dielectrics

NARCIS (Netherlands)

Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

Energy Technology Data Exchange (ETDEWEB)

Escobar, C.; Villarreal, M. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Caicedo, J.C., E-mail: jcaicedoangulo1@gmail.com [Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingeniería Mecatrónica, Universidad Militar Nueva Granada, Bogotá (Colombia); Caicedo, H.H. [Department of Bioengineering, University of Illinois at Chicago, IL 60612 (United States); Department of Anatomy and Cell Biology, University of Illinois at Chicago, IL 60612 (United States); Prieto, P. [Thin Film Group, Universidad del Valle, A.A. 25360, Cali (Colombia); Center of Excellence for Novel Materials, CENM, Cali (Colombia)

2013-10-31

HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN]{sub n} multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm{sup 2} and 0.094*10{sup −3} mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures.

Diagnostic of corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

International Nuclear Information System (INIS)

Escobar, C.; Villarreal, M.; Caicedo, J.C.; Aperador, W.; Caicedo, H.H.; Prieto, P.

2013-01-01

HfN/VN multilayered systems were grown on 4140 steel substrates with the aim to improve their electrochemical behavior. The multilayered coatings were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n) while maintaining constant the total coating thickness (∼ 1.2 μm). The coatings were characterized by X-ray diffraction (XRD), and electron microscopy. The electrochemical properties were studied by Electrochemical Impedance Spectroscopy and Tafel curves. XRD results showed preferential growth in the face-centered cubic (111) crystal structure for [HfN/VN] n multilayered coatings. The maximum corrosion resistance was obtained for coatings with (Λ) equal to 15 nm, corresponding to bilayer n = 80. Polarization resistance and corrosion rate was around 112.19 kΩ cm 2 and 0.094*10 −3 mmy respectively; moreover, these multilayered system showed a decrease of 80% on mass loss due to the corrosive–erosive process, in relation to multilayered systems with n = 1 and Λ = 1200. HfN/VN multilayers have been designed and deposited on Si (100) and AISI 4140 steel substrates with bilayer periods (Λ) in a broad range, from nanometers to hundreds of nanometers to study the microstructural evolution and electrochemical progress with decreasing bilayer thickness. - Highlights: • Enhancements on surface electrochemical properties and response to surface corrosion attack. • Superficial phenomenon that occurs in corrosion surface of [Hf-Nitrides/V-Nitrides]n • Corrosion–erosion evolution for [Hf-Nitrides/V-Nitrides]n structures

Nano-particulate Aluminium Nitride/Al: An Efficient and Versatile Heterogeneous Catalyst for the Synthesis of Biginelli Scaffolds

Science.gov (United States)

Tekale, S. U.; Tekale, A. B.; Kanhe, N. S.; Bhoraskar, S. V.; Pawar, R. P.

2011-12-01

Nano-particulate aluminium nitride/Al (7:1) is reported as a new heterogeneous solid acid catalyst for the synthesis of 3, 4-dihydroxypyrimidi-2-(1H)-ones and their sulphur analogues using the Biginelli reaction. This method involves short reaction time, easy separation, high yields and purity of products.

Amorphous Metal Tungsten Nitride and its Application for Micro and Nanoelectromechanical Applications

KAUST Repository

Mayet, Abdulilah M.

2016-01-01

In addition, tungsten nitride could be the modern life vine by fulfilling the demand of biodegradable material for sustainable life regime. Transient electronics is a form of biodegradable electronics as it is physically disappearing totally or partially after performing the required function. The fabricated aWNx suites this category very well, despite not being a universal bio-element. It has been found that aWNx dissolves in ground water with a rate of ≈ 20-60 nm h-1. This means that a 100 nm thick aWNx disappears in ground water in less than a day and three days are enough to dissolve completely a 300 nm thickness device.

Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

International Nuclear Information System (INIS)

Zhang, Ligang; Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang; Mu, Xindong

2013-01-01

Graphical abstract: - Highlights: • P-doped g-C 3 N 4 has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C 3 N 4 . • A postannealing treatment further enhanced the activity of P-doped g-C 3 N 4 . • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C 3 N 4 , which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry

Polymeric carbon nitride nanomesh as an efficient and durable metal-free catalyst for oxidative desulfurization.

Science.gov (United States)

Shen, Lijuan; Lei, Ganchang; Fang, Yuanxing; Cao, Yanning; Wang, Xinchen; Jiang, Lilong

2018-03-06

We report the first use of polymeric carbon nitride (CN) for the catalytic selective oxidation of H 2 S. The as-prepared CN with unique ultrathin "nanomeshes" structure exhibits excellent H 2 S conversion and high S selectivity. In particular, the CN nanomesh also displays better durability in the desulfurization reaction than traditional catalysts, such as carbon- and iron-based materials.

Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

International Nuclear Information System (INIS)

Jagannadham, Kasichainula

2015-01-01

Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr 2 N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W 2 N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W 2 N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films

Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

Science.gov (United States)

Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

2011-08-01

In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

Energy Technology Data Exchange (ETDEWEB)

Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

2017-05-12

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

Aluminum nitride insulating films for MOSFET devices

Science.gov (United States)

Lewicki, G. W.; Maserjian, J.

1972-01-01

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

2017-01-15

Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

Energy Technology Data Exchange (ETDEWEB)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com [Young Researchers and Elite Club, Kermanshah Br anch, Islamic Azad University, P.O. Box: 6718997551, Kermanshah (Iran, Islamic Republic of); Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir [Physics Department, Faculty of Science, Kharazmi University, University Square, P.O. Box: 3197937551, Karaj (Iran, Islamic Republic of)

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

Nitride coating enhances endothelialization on biomedical NiTi shape memory alloy

Energy Technology Data Exchange (ETDEWEB)

Ion, Raluca [University of Bucharest, Department of Biochemistry and Molecular Biology, 91-95 Spl. Independentei, 050095 Bucharest (Romania); Luculescu, Catalin [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor, P.O. Box MG-36, 077125 Magurele-Bucharest (Romania); Cimpean, Anisoara, E-mail: anisoara.cimpean@bio.unibuc.ro [University of Bucharest, Department of Biochemistry and Molecular Biology, 91-95 Spl. Independentei, 050095 Bucharest (Romania); Marx, Philippe [AMF Company, Route de Quincy, 18120 Lury-sur-Arnon (France); Gordin, Doina-Margareta; Gloriant, Thierry [INSA Rennes, UMR CNRS 6226 ISCR, 20 Avenue des Buttes de Coësmes, 35708 Rennes Cedex 7 (France)

2016-05-01

Surface nitriding was demonstrated to be an effective process for improving the biocompatibility of implantable devices. In this study, we investigated the benefits of nitriding the NiTi shape memory alloy for vascular stent applications. Results from cell experiments indicated that, compared to untreated NiTi, a superficial gas nitriding treatment enhanced the adhesion of human umbilical vein endothelial cells (HUVECs), cell spreading and proliferation. This investigation provides data to demonstrate the possibility of improving the rate of endothelialization on NiTi by means of nitride coating. - Highlights: • Gas nitriding process of NiTi is competent to promote cell spreading. • Surface nitriding of NiTi is able to stimulate focal adhesion formation and cell proliferation. • Similar expression pattern of vWf and eNOS was exhibited by bare and nitrided NiTi. • Gas nitriding treatment of NiTi shows promise for better in vivo endothelialization.

Hydrogen-mediated Nitrogen Clustering in Dilute III-V Nitrides

Energy Technology Data Exchange (ETDEWEB)

Du, M.-H.; Limpijumnong, S.; Zhang, S. B

2006-01-01

First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H*{sub 2}(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H*{sub 2}(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

Hydrogen-Mediated Nitrogen Clustering in Dilute III-V Nitrides

Science.gov (United States)

Du, Mao-Hua; Limpijumnong, Sukit; Zhang, S. B.

2006-08-01

First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H2*(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H2*(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

Leachability of nitrided ilmenite in hydrochloric acid

CSIR Research Space (South Africa)

Swanepoel, JJ

2010-10-01

Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

Thermodynamics, kinetics and process control of nitriding

DEFF Research Database (Denmark)

Mittemeijer, Eric J.; Somers, Marcel A. J.

1999-01-01

As a prerequisite for predictability of properties obtained by a nitriding treatment of iron-based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present (even) the description of thermodynamic equilibrium...... of pure iron-nitrogen phases has not been achieved fully. It has been shown that taking into account ordering of nitrogen in the epsilon and gamma' iron-nitride phases, leads to an improved understanding of the Fe-N phase diagram. Although thermodynamics indicate the state the system strives for......, the nitriding result is determined largely by the kinetics of the process. The nitriding kinetics have been shown to be characterised by the occurring local near-equilibria and stationary states at surfaces and interfaces, and the diffusion coefficient of nitrogen in the various phases, for which new data have...

Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

Science.gov (United States)

Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

2012-10-01

We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

Residual Stress Induced by Nitriding and Nitrocarburizing

DEFF Research Database (Denmark)

Somers, Marcel A.J.

2005-01-01

The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

International Nuclear Information System (INIS)

Clement, J.J.

1980-01-01

The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

Theoretical assessment of the electro-optical features of the group III nitrides (B{sub 12}N{sub 12}, Al{sub 12}N{sub 12} and Ga{sub 12}N{sub 12}) and group IV carbides (C{sub 24}, Si{sub 12}C{sub 12} and Ge{sub 12}C{sub 12}) nanoclusters encapsulated with alkali metals (Li, Na and K)

Energy Technology Data Exchange (ETDEWEB)

Tahmasebi, Elham [Chemistry Department, Faculty of Science, Lorestan University, Khorram Abad, Lorestan (Iran, Islamic Republic of); Shakerzadeh, Ehsan, E-mail: e.shakerzadeh@scu.ac.ir [Chemistry Department, Faculty of Science, Shahid Chamran University, Ahvaz (Iran, Islamic Republic of); Biglari, Zeinab [Chemistry Department, Faculty of Science, Lorestan University, Khorram Abad, Lorestan (Iran, Islamic Republic of)

2016-02-15

Graphical abstract: - Highlights: • Encapsulation of Li, Na and K narrow the HOMO–LUMO gaps of the clusters. • The group III nitrides nanoclusters strongly interacted with the alkali metals. • First hyperpolarizabilities remarkably enhance for B{sub 12}N{sub 12} encapsulated with Na/K. - Abstract: Density functional theory (DFT) calculations have been carried out to study the influence of alkali metals (Li, Na and K) encapsulation within the group III nitrides (B{sub 12}N{sub 12}, Al{sub 12}N{sub 12} and Ga{sub 12}N{sub 12}) and the group IV carbides (C{sub 24}, Si{sub 12}C{sub 12}and Ge{sub 12}C{sub 12}) nanoclusters. The encapsulation of Li, Na and K atoms is found to narrow the HOMO–LUMO gaps of the considered clusters. The electronic properties of these clusters, especially the group III nitrides nanoclusters, are strongly sensitive to interaction with the alkali metals. Moreover it is observed that the encapsulation of alkali metals enhances the first hyperpolarizabilities of B{sub 12}N{sub 12} nanocluster. Surprisingly, due to the alkali metals encapsulation within B{sub 12}N{sub 12} nanocluster, the first hyperpolarizability values are remarkably increased to 8505.49 and 122,503.76 a.u. for Na@B{sub 12}N{sub 12} and K@B{sub 12}N{sub 12}, respectively. Also the TD-DFT calculations at both CAM-B3LYP/6-311+G(d) and PBE0/6-311+G(d) levels of theory are also performed to investigate the origin of first hyperpolarizabilities.

3D-atom probe analysis of Cr and Cu added nitriding steels

International Nuclear Information System (INIS)

Takahashi, J.; Kawakami, K.; Sugiyama, M.; Kawasaki, K.

2004-01-01

Full text: Nitriding treatment is a very effective method for hardening the surface of steels and realizing improvement in wear-resistance. Although this technology has been performed for many years, the precipitation and hardening mechanisms are not completely clear. It was not easy to observe very fine precipitates which may be generated in nitriding steels. We performed a three-dimensional atom probe analysis of the nitriding steel plate in which two kinds of precipitates were generated. Hot-rolled steel plates, which mainly contained Cr 1.0wt.% and Cu 1.3wt.%, were nitrided by annealing (550-6000 o ) in a mainly NH 3 atmosphere. The material before the nitriding had a hardness of about 100 Hv. By the nitriding, the surface hardness increased to more than 700 Hv, and the inside hardness also increased to 200 Hv. The specimens were taken from 0.15 mm, 0.3 mm and 0.8 mm depth from the surface, which mostly correspond to the peak, the half and the inside hardness, respectively. In the specimen of 0.8 mm depth, prolate spheroidal Cu precipitates of more than 8 nm in diameter were observed. In the specimen of 0.3 mm depth, plate-shape nitride precipitates of 6-10 nm in diameter were observed in addition to the Cu precipitates. Each Cu precipitate made a pair with the nitride precipitate. In the 0.15 mm depth specimen, Cr nitride precipitates of high volume density in addition to the pairs consisting of a Cu precipitate and a Cr nitride precipitate were observed. The size of the nitride precipitate forming the pair was slightly larger than that of the single Cr nitride precipitates. Furthermore, the denuded zone where the nitride precipitate does not exist was observed around the pairs. From these results, it was concluded that three stages of precipitation arose as follows: By the heat treatment of nitriding processing, Cu precipitates were generated first. Then, Cr nitride nucleated at the surface of the Cu precipitates inhomogeneously, and surrounding solute Cr was

Synthesis and characterization of titanium-vanadium ternary nitride (Ti{sub x}V{sub 1}-xN).; Sintesis y caracterizacion del nitruro ternario de titanio y vanadio (Ti{sub x}V{sub 1}-xN)

Energy Technology Data Exchange (ETDEWEB)

Roldan, M. A.; Alcala, M. D.; Ortega, A.; Real, C.

2011-07-01

Titanium-Vanadium nitride (TiVN) has been prepared from carbothermal reduction of corresponding oxides and also by direct nitridation of a mix of two metals employing the ATVC method. The characterization of the final product by X-ray diffraction, scanning electron microscopy, electron energy loss (EELS), and X-ray absorption spectroscopy (XAS) is presented. The synthesis of the ternary nitride has been possible in all range of composition and the final product is obtained with nano metric particle size and a high microhardness after sintering. (Author) 58 refs.

The Advanced Aluminum Nitride Synthesis Methods and Its Applications: Patent Review.

Science.gov (United States)

Shishkin, Roman A; Elagin, Andrey A; Mayorova, Ekaterina S; Beketov, Askold R

2016-01-01

High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. However, there is no up-to-date review considering the major issues and the technical solutions for different methods. This review aims to investigate the advanced methods of aluminum nitride synthesis and its development tendencies. Also the aluminum nitride application patents and prospects for development of the branch have been considered. The patent search on "aluminum nitride synthesis" has been carried out. The research activity has been analyzed. Special attention has been paid to the patenting geography and the leading researchers in aluminum nitride synthesis. Aluminum nitride synthesis methods have been divided into 6 main groups, the most studied approaches are carbothermal reduction (88 patents) and direct nitridation (107 patents). The current issues for each group have been analyzed; the main trends are purification of the final product and nanopowder synthesis. The leading researchers in aluminum nitride synthesis have represented 5 countries, namely: Japan, China, Russia, South Korea and USA. The main aluminum nitride application spheres are electronics (59,1 percent of applications) and new materials manufacturing (30,9 percent). The review deals with the state of the art data in nanosized aluminum nitride synthesis, the major issues and the technical solutions for different synthesis methods. It gives a full understanding of the development tendencies and of the current leaders in the sphere.

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

International Nuclear Information System (INIS)

Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

2005-01-01

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

Science.gov (United States)

Alur, Siddharth

Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

Plasma nitriding of CA-6NM steel: effect of H2 + N2 gas mixtures in nitride layer formation for low N2 contents at 500 ºC

Directory of Open Access Journals (Sweden)

Angela Nardelli Allenstein

2010-12-01

Full Text Available This work aims to characterize the phases, thickness, hardness and hardness profiles of the nitride layers formed on the CA-6NM martensitic stainless steel which was plasma nitrided in gas mixtures containing different nitrogen amounts. Nitriding was performed at 500 ºC temperature, and 532 Pa (4 Torr pressure, for gas mixtures of 5% N2 + 95% H2, 10% N2 + 90% H2, and 20% N2 + 80% H2, and 2 hours nitriding time. A 6 hours nitriding time condition for gas mixture of 5% N2 + 95% H2 was also studied. Nitrided samples results were compared with non-nitrided condition. Thickness and microstructure of the nitrided layers were characterized by optical microscopy (OM, using Villela and Nital etchants, and the phases were identified by X-ray diffraction. Hardness profiles and hardness measured on surface steel were determined using Vickers hardness and nanoindentation tester, respectively. It was verified that nitrided layer produced in CA-6NM martensitc stainless steel is constituted of compound layer, being that formation of the diffusion zone was not observed for the studied conditions. The higher the nitrogen amounts in gas mixture the higher is the thickness of the nitrided layer and the probability to form different nitride phases, in the case γ'-Fe4N, ε-Fe2-3N and CrN phases. Intrinsic hardness of the nitrided layers produced in the CA-6NM stainless steel is about 12-14 GPa (~1200-1400 HV.

Problems and possibilities of development of boron nitride ceramics

International Nuclear Information System (INIS)

Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

1988-01-01

The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

Development of nitride fuel and pyrochemical process for transmutation of minor actinides

International Nuclear Information System (INIS)

Arai, Yasuo; Akabori, Mitsuo; Minato, Kazuo; Uno, Masayoshi

2010-01-01

Nitride fuel cycle for transmutation of minor actinides has been investigated under the double-strata fuel cycle concept. Mononitride solid solutions containing minor actinides have been prepared and characterised. Thermo-physical properties, such as thermal expansion, heat capacity and thermal diffusivity, have been measured by use of minor actinide nitride and burn-up simulated nitride samples. Irradiation behaviour of nitride fuel has been examined by irradiation tests. Pyrochemical process for treatment of spent nitride fuel has been investigated mainly by electrochemical measurements and nitride formation behaviour in pyrochemical process has been studied for recycled fuel fabrication. Recent results of experimental study on nitride fuel and pyrochemical process are summarised in the paper. (authors)

Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Genel, K. [Sakarya Univ., Adapazari (Turkey). Mech. Eng. Dept.; Demirkol, M.; Guelmez, T. [Faculty of Mechanical Engineering, Istanbul Technical University, Guemuessuyu, 80191, Istanbul (Turkey)

2000-08-31

Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10{sup 7} cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

International Nuclear Information System (INIS)

Genel, K.

2000-01-01

Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10 7 cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

International Nuclear Information System (INIS)

Bouanis, F.Z.; Bentiss, F.; Bellayer, S.; Vogt, J.B.; Jama, C.

2011-01-01

Highlights: → C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. → RF plasma treatment enables nitriding for non-heated substrates. → The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. → Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe x N. → The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N 2 gas. Surface characterizations before and after N 2 plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 μm for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV 0.005 at a plasma processing time of 8 h.

Radiofrequency cold plasma nitrided carbon steel: Microstructural and micromechanical characterizations

Energy Technology Data Exchange (ETDEWEB)

Bouanis, F.Z. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Bentiss, F. [Laboratoire de Chimie de Coordination et d' Analytique, Faculte des Sciences, Universite Chouaib Doukkali, B.P. 20, M-24000 El Jadida (Morocco); Bellayer, S.; Vogt, J.B. [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France); Jama, C., E-mail: charafeddine.jama@ensc-lille.fr [Universite Lille Nord de France, F-59000 Lille (France); Unite Materiaux et Transformations (UMET), Ingenierie des Systemes Polymeres, CNRS UMR 8207, ENSCL, BP 90108, F-59652 Villeneuve d' Ascq Cedex (France)

2011-05-16

Highlights: {yields} C38 carbon steel samples were plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge. {yields} RF plasma treatment enables nitriding for non-heated substrates. {yields} The morphological and chemical analyses show the formation of a uniform thickness on the surface of the nitrided C38 steel. {yields} Nitrogen plasma active species diffuse into the samples and lead to the formation of Fe{sub x}N. {yields} The increase in microhardness values for nitrided samples with plasma processing time is interpreted by the formation of a thicker nitrided layer on the steel surface. - Abstract: In this work, C38 carbon steel was plasma nitrided using a radiofrequency (rf) nitrogen plasma discharge on non-heated substrates. General characterizations were performed to compare the chemical compositions, the microstructures and hardness of the untreated and plasma treated surfaces. The plasma nitriding was carried out on non-heated substrates at a pressure of 16.8 Pa, using N{sub 2} gas. Surface characterizations before and after N{sub 2} plasma treatment were performed by means of the electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Vickers microhardness measurements. The morphological and chemical analysis showed the formation of a uniform structure on the surface of the nitrided sample with enrichment in nitrogen when compared to untreated sample. The thickness of the nitride layer formed depends on the treatment time duration and is approximately 14 {mu}m for 10 h of plasma treatment. XPS was employed to obtain chemical-state information of the plasma nitrided steel surfaces. The micromechanical results show that the surface microhardness increases as the plasma-processing time increases to reach, 1487 HV{sub 0.005} at a plasma processing time of 8 h.

Morphological and structural characterizations of dendrimer-mediated metallic Ti and Al thin film nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Curry, M. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Li, X. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Zhang, J. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Weaver, M.L. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Street, S.C. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States) and Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States)]. E-mail: sstreet@bama.ua.edu

2007-02-26

Evidence is presented here for significant influence on the surface topography of Ti and Al films in the presence of poly(amidoamine) dendrimer monolayers [generations G(4-8)] on SiO {sub x}. X-ray photoelectron spectroscopy analysis clearly indicates formation of nitrides and carbides for Ti metal grown on dendrimer monolayers. In addition, obvious trends in measured correlation lengths and crystalline growth modes of Ti films indicate grain sizes tracking the intrinsic roughness of dendrimer monolayers. No formation of metal nitride is observed for Al depositions. Atomic force microscopy analyses show significant changes in rms vertical roughness and aggregation of as-deposited Ti or Al in presence of dendrimer monolayers.

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

Structure and electrochemical properties of plasma-nitrided low alloy steel

Energy Technology Data Exchange (ETDEWEB)

Chyou, S.D.; Shih, H.C. (Dept. of Materials Science and Engineering, National Tsing Hua Univ., Hsinchu (Taiwan))

1990-10-01

Plasma-nitrided SAE 4140 steel has been widely applied industrially because of its superior resistance to wear and fatigue. However, its corrosion behaviour in aqueous environments has not been completely explored. The effects of nitriding on corrosion were investigated by performing electrochemical tests on both nitrided and untreated SAE 4140. It was found that, by plasma nitriding, the corrosion resistance improved significantly in HNO{sub 3} and Na{sub 2}SO{sub 4} aqueous environments. A reaction model is proposed to explain the beneficial effect of nitride on corrosion resistance. It is concluded that nitrogen and chromium (an alloying element) act synergistically to form a dense protective layer which is responsible for the corrosion resistance. Characterization of the surface layers by Auger electron spectroscopy and X-ray photoelectron spectroscopy reveals that the protective layer is composed of (Fe, Cr){sub 4}N, (Fe, Cr){sub 2-3}N and CrN in the inner layer, Fe{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} together with nitrides in the middle layer, and nitrides, {gamma}'-FeOOH, and Cr(OH){sub 3}.H{sub 2}O in the outermost layer. (orig.).

Powder-XRD and (14) N magic angle-spinning solid-state NMR spectroscopy of some metal nitrides.

Science.gov (United States)

Kempgens, Pierre; Britton, Jonathan

2016-05-01

Some metal nitrides (TiN, ZrN, InN, GaN, Ca3 N2 , Mg3 N2 , and Ge3 N4 ) have been studied by powder X-ray diffraction (XRD) and (14) N magic angle-spinning (MAS) solid-state NMR spectroscopy. For Ca3 N2 , Mg3 N2 , and Ge3 N4 , no (14) N NMR signal was observed. Low speed (νr  = 2 kHz for TiN, ZrN, and GaN; νr  = 1 kHz for InN) and 'high speed' (νr  = 15 kHz for TiN; νr  = 5 kHz for ZrN; νr  = 10 kHz for InN and GaN) MAS NMR experiments were performed. For TiN, ZrN, InN, and GaN, powder-XRD was used to identify the phases present in each sample. The number of peaks observed for each sample in their (14) N MAS solid-state NMR spectrum matches perfectly well with the number of nitrogen-containing phases identified by powder-XRD. The (14) N MAS solid-state NMR spectra are symmetric and dominated by the quadrupolar interaction. The envelopes of the spinning sidebands manifold are Lorentzian, and it is concluded that there is a distribution of the quadrupolar coupling constants Qcc 's arising from structural defects in the compounds studied. Copyright © 2015 John Wiley & Sons, Ltd.

Atomic Resolution Microscopy of Nitrides in Steel

DEFF Research Database (Denmark)

Danielsen, Hilmar Kjartansson

2014-01-01

MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

Defects in dilute nitrides

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2005-01-01

We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

Strain- and electric field-induced band gap modulation in nitride nanomembranes

International Nuclear Information System (INIS)

Amorim, Rodrigo G; Zhong Xiaoliang; Mukhopadhyay, Saikat; Pandey, Ravindra; Rocha, Alexandre R; Karna, Shashi P

2013-01-01

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. (paper)

Low temperature anodic bonding to silicon nitride

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Bouaidat, Salim

2000-01-01

Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

Review of actinide nitride properties with focus on safety aspects

Energy Technology Data Exchange (ETDEWEB)

Albiol, Thierry [CEA Cadarache, St Paul Lez Durance Cedex (France); Arai, Yasuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

2001-12-01

This report provides a review of the potential advantages of using actinide nitrides as fuels and/or targets for nuclear waste transmutation. Then a summary of available properties of actinide nitrides is given. Results from irradiation experiments are reviewed and safety relevant aspects of nitride fuels are discussed, including design basis accidents (transients) and severe (core disruptive) accidents. Anyway, as rather few safety studies are currently available and as many basic physical data are still missing for some actinide nitrides, complementary studies are proposed. (author)

Colloidal Plasmonic Titanium Nitride Nanoparticles: Properties and Applications

DEFF Research Database (Denmark)

Guler, Urcan; Suslov, Sergey; Kildishev, Alexander V.

2015-01-01

Optical properties of colloidal plasmonic titanium nitride nanoparticles are examined with an eye on their photothermal and photocatalytic applications via transmission electron microscopy and optical transmittance measurements. Single crystal titanium nitride cubic nanoparticles with an average ...

Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Ibrahim Nor Nurulhuda Md.

2014-07-01

Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

Electronic and thermodynamic properties of transition metal elements and compounds

International Nuclear Information System (INIS)

Haeglund, J.

1993-01-01

This thesis focuses on the use of band-structure calculations for studying thermodynamic properties of solids. We discuss 3d-, 4d- and 5d-transition metal carbides and nitrides. Through a detailed comparison between theoretical and experimental results, we draw conclusions on the character of the atomic bonds in these materials. We show how electronic structure calculations can be used to give accurate predictions for bonding energies. Part of the thesis is devoted to the application of the generalized gradient approximation in electronic structure calculations on transition metals. For structures with vibrational disorder, we present a method for calculating averaged phonon frequencies without using empirical information. For magnetic excitations, we show how a combined use of theoretical results and experimental data can yield information on magnetic fluctuations at high temperatures. The main results in the thesis are: Apart for an almost constant shift, theoretically calculated bonding energies for transition metal carbides and nitrides agree with experimental data or with values from analysis of thermochemical information. The electronic spectrum of transition metal carbides and nitrides can be separated into bonding, antibonding and nonbonding electronic states. The lowest enthalpy of formation for substoichiometric vanadium carbide VC 1-X at zero temperature and pressure occurs for a structure containing vacancies (x not equal to 0). The generalized gradient approximation improves theoretical calculated cohesive energies for 3d-transition metals. Magnetic phase transitions are sensitive to the description of exchange-correlation effects in electronic structure calculations. Trends in Debye temperatures can be successfully analysed in electronic structure calculations on disordered lattices. For the elements, there is a clear dependence on the crystal structure (e.g., bcc, fcc or hcp). Chromium has fluctuating local magnetic moments at temperatures well above

Influence of plastic deformation on nitriding of a molybdenum-hafnium alloy

International Nuclear Information System (INIS)

Lakhtin, Yu.M.; Kogan, Ya.D.; Shashkov, D.P.; Likhacheva, T.E.

1982-01-01

The influence of a preliminary plastic strain on the structure and properties of molybdenum alloy with 0.2 wt.% Hf upon nitriding in the ammonia medium at 900-1200 deg C during 1-6 h is investigated. The study of microhardness distribution across the nitrided layer thickness has shown that with increase of the degree of preliminary plastic strain up to 50 % the nitrided layer hardness decreases and with further reduction growth up to 90 % - increases. Nitriding sharply (hundred times) increases wear resistance of molybdenum alloy with hafnium addition. At the reduction degree 25 % the wear resistance is less than at other values of percentage reduction in area owing to the minimum thickness of the nitride zone. The alloy strained before nitriding by 25 % has shown the best results during heat resistance testing

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Directory of Open Access Journals (Sweden)

Ana Luz Muñoz-Rosas

2018-03-01

Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

P and Si functionalized MXenes for metal-ion battery applications

KAUST Repository

Zhu, Jiajie; Schwingenschlö gl, Udo

2017-01-01

MXenes are a family of two-dimensional materials, composed of early transition metal carbides, nitrides, and carbonitrides, with great potential in energy storage systems, in particular in electrodes for Li, Na, K-ion batteries. However, so far

Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

International Nuclear Information System (INIS)

Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

2015-01-01

Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications

Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

Energy Technology Data Exchange (ETDEWEB)

Czarnowska, Elżbieta [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Borowski, Tomasz [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Sowińska, Agnieszka [Children' s Memorial Health Institute, Pathology Department, Al. Dzieci Polskich 20, 04-730 Warsaw (Poland); Lelątko, Józef [Silesia University, Faculty of Computer Science and Materials Science, 75 Pułku Piechoty 1A, 41-500 Chorzów (Poland); Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland); Wierzchoń, Tadeusz, E-mail: twierz@inmat.pw.edu.pl [Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw (Poland)

2015-04-15

Highlights: • Low temperature plasma nitriding process of NiTi shape memory alloy is presented. • The possibility of treatment details of sophisticated shape. • TiN surface layer has diffusive character. • TiN surface layer increases corrosion resistance of NiTi alloy. • Produced TiN layer modify the biological properties of NiTi alloy. - Abstract: NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

Method of production of hollow silicon nitride articles

International Nuclear Information System (INIS)

Parr, N.L.; Brown, R.L.

1971-01-01

The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Graphitic carbon nitride based nanocomposites: a review

Science.gov (United States)

Zhao, Zaiwang; Sun, Yanjuan; Dong, Fan

2014-11-01

Graphitic carbon nitride (g-C3N4), as an intriguing earth-abundant visible light photocatalyst, possesses a unique two-dimensional structure, excellent chemical stability and tunable electronic structure. Pure g-C3N4 suffers from rapid recombination of photo-generated electron-hole pairs resulting in low photocatalytic activity. Because of the unique electronic structure, the g-C3N4 could act as an eminent candidate for coupling with various functional materials to enhance the performance. According to the discrepancies in the photocatalytic mechanism and process, six primary systems of g-C3N4-based nanocomposites can be classified and summarized: namely, the g-C3N4 based metal-free heterojunction, the g-C3N4/single metal oxide (metal sulfide) heterojunction, g-C3N4/composite oxide, the g-C3N4/halide heterojunction, g-C3N4/noble metal heterostructures, and the g-C3N4 based complex system. Apart from the depiction of the fabrication methods, heterojunction structure and multifunctional application of the g-C3N4-based nanocomposites, we emphasize and elaborate on the underlying mechanisms in the photocatalytic activity enhancement of g-C3N4-based nanocomposites. The unique functions of the p-n junction (semiconductor/semiconductor heterostructures), the Schottky junction (metal/semiconductor heterostructures), the surface plasmon resonance (SPR) effect, photosensitization, superconductivity, etc. are utilized in the photocatalytic processes. Furthermore, the enhanced performance of g-C3N4-based nanocomposites has been widely employed in environmental and energetic applications such as photocatalytic degradation of pollutants, photocatalytic hydrogen generation, carbon dioxide reduction, disinfection, and supercapacitors. This critical review ends with a summary and some perspectives on the challenges and new directions in exploring g-C3N4-based advanced nanomaterials.

Nitridation of porous GaAs by an ECR ammonia plasma

International Nuclear Information System (INIS)

Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

2006-01-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

Nitridation of porous GaAs by an ECR ammonia plasma

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

2006-02-15

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Nitridation of porous GaAs by an ECR ammonia plasma

Science.gov (United States)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Analysis of mechanical properties of steel 1045 plasma nitriding: with and without tempering

International Nuclear Information System (INIS)

Machado, N.T.B.; Passos, M.L.M. dos; Riani, J.C.; Recco, A.A.C.

2014-01-01

The purpose of this study was to evaluate the possibility of tempering during the nitriding of AISI 1045 steel. The objective was to evaluate the possibility of eliminating this phase, with the nitriding properties remaining unaltered. For this, three parameter samples were compared: quenched, tempered and nitrided for 2h; quenching and nitrided for 2h and quenching and nitrided for 4h. The analysis techniques used for characterizing the samples before and after nitriding were optical microscopy, hardness Rockwell C (HRC), scanning electron microscopy (SEM), X-ray diffraction (XRD). Results showed that phase γ is the most favorable of all parameters tested. The hardness assays showed that samples with different initial hardness (with and without tempering) and even nitriding time showed similar mechanical properties. This fact suggests that the tempering process occurred parallel to the nitriding process. (author)

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

Science.gov (United States)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Hidroxyapatite Coating on CoCrMo Alloy Titanium Nitride Coated Using Biomimetic Method

International Nuclear Information System (INIS)

Charlena; Sukaryo, S.G.; Fajar, M.

2016-01-01

Bone implants is a way to cure broken bones which is being developed. The implants can be made of metals, ceramics and polymers. Metallic materials commonly used are titanium (Ti), stainless steel, and metal alloys. This study used Co-based alloys, i.e. CoCrMo coated with titanium nitride (TiN) which was then coated on hidroxyapatite (HAp). The HAp coating on the surface of CoCrMo alloy was done by biomimetic methods, first by soaking the metal alloys in simulated body fluid (SBF) solution for 18, 24, and 36 hours. The immersion in the SBF solution produced white coat on the surface of the metal alloy. The layers formed were analyzed by scanning electron microscope (SEM) and characterized by x-ray diffractometer (XRD). Based on the SEM results of 36 hours treatment, the morphology of apatite crystal formed fine grains. According to XRD result, there were HAp peaks at angles 2θ 31.86, 32.25, dan 39.48. However, there were also CaCO 3 peaks at angles 2θ 29.46, 36.04, and 46.79. It indicated the pure HAp is not yet formed. (paper)

Hidroxyapatite Coating on CoCrMo Alloy Titanium Nitride Coated Using Biomimetic Method

Science.gov (United States)

Charlena; Sukaryo, S. G.; Fajar, M.

2016-11-01

Bone implants is a way to cure broken bones which is being developed. The implants can be made of metals, ceramics and polymers. Metallic materials commonly used are titanium (Ti), stainless steel, and metal alloys. This study used Co-based alloys, i.e. CoCrMo coated with titanium nitride (TiN) which was then coated on hidroxyapatite (HAp). The HAp coating on the surface of CoCrMo alloy was done by biomimetic methods, first by soaking the metal alloys in simulated body fluid (SBF) solution for 18, 24, and 36 hours. The immersion in the SBF solution produced white coat on the surface of the metal alloy. The layers formed were analyzed by scanning electron microscope (SEM) and characterized by x-ray diffractometer (XRD). Based on the SEM results of 36 hours treatment, the morphology of apatite crystal formed fine grains. According to XRD result, there were HAp peaks at angles 2θ 31.86, 32.25, dan 39.48. However, there were also CaCO3 peaks at angles 2θ 29.46, 36.04, and 46.79. It indicated the pure HAp is not yet formed.

Surface enrichment with chrome and nitriding of IF steel under an abnormal glow discharge

International Nuclear Information System (INIS)

Meira, S.R.; Borges, P.C.; Bernardelli, E.A.

2014-01-01

The objective of this work is to evaluate the influence of surface enrichment of IF steel with chrome, and nitriding, the formation of the nitrided layer. Thus, IF steel samples were subjected to surface enrichment process, using 409 stainless steel as a target for sputtering, followed by plasma nitriding, both under a dc abnormal glow discharge. The enrichment treatment was operated at 1200 ° C for 3h. The nitriding treatment was operated at 510 ° C for 2 h. The influence of the treatments on the layers formed was studied through optical microscopy (OM), scan electron microscopy (SEM), X-ray diffraction (XRD) and Vickers microindentation. The results show that the enrichment is effective to enrich the IF surface, furthermore, improves the characteristics of nitriding, comparing nitriding samples to nitriding and enriched, was observed needles of nitrides, as well as a higher hardness, which is associated with the nitrides of chrome, on the nitriding and enriched samples. (author)

Continuum modelling for carbon and boron nitride nanostructures

International Nuclear Information System (INIS)

Thamwattana, Ngamta; Hill, James M

2007-01-01

Continuum based models are presented here for certain boron nitride and carbon nanostructures. In particular, certain fullerene interactions, C 60 -C 60 , B 36 N 36 -B 36 N 36 and C 60 -B 36 N 36 , and fullerene-nanotube oscillator interactions, C 60 -boron nitride nanotube, C 60 -carbon nanotube, B 36 N 36 -boron nitride nanotube and B 36 N 36 -carbon nanotube, are studied using the Lennard-Jones potential and the continuum approach, which assumes a uniform distribution of atoms on the surface of each molecule. Issues regarding the encapsulation of a fullerene into a nanotube are also addressed, including acceptance and suction energies of the fullerenes, preferred position of the fullerenes inside the nanotube and the gigahertz frequency oscillation of the inner molecule inside the outer nanotube. Our primary purpose here is to extend a number of established results for carbon to the boron nitride nanostructures

Comparative study involving the uranium determination through catalytic reduction of nitrates and nitrides by using decoupled plasma nitridation (DPN)

International Nuclear Information System (INIS)

Aguiar, Marco Antonio Souza; Gutz, Ivano G. Rolf

1999-01-01

This paper reports a comparative study on the determination of uranium through the catalytic reduction of nitrate and nitride using the decoupled plasma nitridation. The uranyl ions are a good catalyst for the reduction of NO - 3 and NO - 2 ions on the surface of a hanging drop mercury electrode (HDME). The presence of NO - in a solution with p H = 3 presented a catalytic signal more intense than the signal obtained with NO - 3 (concentration ten times higher). A detection limit of 1x10 9 M was obtained using the technique of decoupled plasma nitridation (DPN), suggesting the development of a sensitive way for the determination of uranium in different matrixes

Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

International Nuclear Information System (INIS)

Dante, Roberto C.; Martin-Ramos, Pablo; Correa-Guimaraes, Adriana; Martin-Gil, Jesus

2011-01-01

Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

Some new aspects of microstructural development during sintering of silicon nitride

International Nuclear Information System (INIS)

Feuer, H.; Woetting, G.; Gugel, E.

1994-01-01

The mechanical properties of silicon nitride ceramics strongly depend on their microstructure. However, there is still a lively discussion about the parameters controlling the microstructural development. The current research was stimulated by the observation that a bimodal grain-size distribution in dense silicon nitride has a very beneficial effect on the mechanical properties, especially on the fracture toughness. This paper is focused on the relationship between the α-β-transformation and the densification of silicon nitride powders with different characteristics and sintering additives. Effects of β-grains originally present in the silicon nitride powder, of added β-silicon nitride seeds and of β-crystals formed by the α/β-transformation on the resulting microstructure and on the properties are discussed. The results are summarised in a model describing prerequisites and processing conditions, which are necessary to achieve a bimodal microstructure, i. e. a self-reinforced silicon nitride ceramic. (orig.)

Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

Science.gov (United States)

Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

2018-02-07

Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tribological properties of plasma and pulse plasma nitrided AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Podgornik, B.; Vizintin, J. [Ljubljana Univ. (Slovenia). Center of Tribology and Tech. Diagnostics; Leskovsek, V. [Inst. of Metals and Technologies, Ljubljana (Slovenia)

1998-10-10

Plasma nitriding is usually used for ferrous materials to improve their surface properties. Knowledge of the properties of thin surface layers is essential for designing engineering components with optimal wear performance. In our study, we investigated the microstructural, mechanical and tribological properties of plasma- and pulse plasma-nitrided AISI 4140 steel in comparison to hardened steel. The influence of nitriding case depth as well as the presence of a compound layer on its tribological behaviour was also examined. Plasma and pulse plasma nitriding were carried out using commercial nitriding processes. Nitrided samples were fully characterised, using metallographic, SEM microscopic, microhardness and profilometric techniques, before and after wear testing. Wear tests were performed on a pin-on-disc wear testing machine in which nitrided pins were mated to hardened ball bearing steel discs. The wear tests were carried out under dry conditions where hardened samples were used as a reference. The resulting wear loss as well as the coefficient of friction was monitored as a function of load and test time. Several microscopic techniques were used to analyse the worn surfaces and wear debris in order to determine the dominant friction and wear characteristics. Results showed improved tribological properties of AISI 4140 steel after plasma and pulse plasma nitriding compared to hardening. However, the compound layer should be removed from the surface by mechanical means or by decreasing the amount of nitrogen in the nitriding atmosphere, to avoid impairment of the tribological properties by fracture of the hard and brittle compound layer followed by the formation of hard abrasive particles. (orig.) 10 refs.

Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

International Nuclear Information System (INIS)

Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

2011-01-01

Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 deg. C and 550 deg. C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N ) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

International Nuclear Information System (INIS)

Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

2017-01-01

Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co_3O_4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co_3O_4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

Energy Technology Data Exchange (ETDEWEB)

Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

2017-04-30

Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Fabrication of carbide and nitride pellets and the nitride irradiations Niloc 1 and Niloc 2

International Nuclear Information System (INIS)

Blank, H.

1991-01-01

Besides the relatively well-known advanced LMFBR mixed carbide fuel an advanced mixed nitride is also an attractive candidate for the optimised fuel cycle of the European Fast Reactor, but the present knowledge about the nitride is still insufficient and should be raised to the level of the carbide. For such an optimised fuel cycle the following general conditions have been set up for the fuel: (i) the burnup of the optimised MN and MC should be at least 15 a/o or even beyond, at moderate linear ratings of less than 75 kW/m (ii) the fuel will be used in a He-bonding pin concept and (iii) as far as available an advanced economic pellet fabrication method should be employed. (iv) The fuel structure must contain 15 - 20% porosity in order to accomodate the fission product swelling at high burnup. This report gives a comprehensive description of fuel and pellet fabrication and characterization, irradiation, and post-irradiation examination. From the results important conclusions can be drawn about future work on nitrides

Magnetic properties of Nd3(Fe,Mo)29 compound and its nitride

International Nuclear Information System (INIS)

Pan Hongge

1998-01-01

The iron-rich ternary intermetallic compound Nd 3 (Fe,Mo) 29 with the Nd 3 (Fe,Ti) 29 -type monoclinic structure and its nitride were prepared. After nitrogenation, the nitride retains the structure of the parent compound, but the unit-cell volume of the nitride is 5.9% greater than that of the parent compound. The Curie temperature of Nd 3 (Fe,Mo) 29 nitride is 70.9% higher than that of the parent compound and the saturation magnetization of the nitride is about 6.6% (at 4.2 K) and 23.7% (at 300 K) higher than that of the parent compound. The anisotropy of the nitride is similar to that of parent compound, which exhibits plane anisotropy. (orig.)

Local heating with titanium nitride nanoparticles

DEFF Research Database (Denmark)

Guler, Urcan; Ndukaife, Justus C.; Naik, Gururaj V.

2013-01-01

We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible.......We investigate the feasibility of titanium nitride (TiN) nanoparticles as local heat sources in the near infrared region, focusing on biological window. Experiments and simulations provide promising results for TiN, which is known to be bio-compatible....

Precipitation of Chromium Nitrides in the Super Duplex Stainless Steel 2507

Science.gov (United States)

Pettersson, Niklas; Pettersson, Rachel F. A.; Wessman, Sten

2015-03-01

Precipitation of chromium nitrides during cooling from temperatures in the range 1373 K to 1523 K (1100 °C to 1250 °C) has been studied for the super duplex stainless steel 2507 (UNS S32750). Characterization with optical, scanning and transmission electron microscopy was combined to quantify the precipitation process. Primarily Cr2N nitrides were found to precipitate with a high density in the interior of ferrite grains. An increased cooling rate and/or an increased austenite spacing clearly promoted nitride formation, resulting in precipitation within a higher fraction of the ferrite grains, and lager nitride particles. Furthermore, formation of the meta-stable CrN was induced by higher cooling rates. The toughness seemed unaffected by nitrides. A slight decrease in pitting resistance was, however, noticed for quenched samples with large amounts of precipitates. The limited adverse effect on pitting resistance is attributed to the small size (~200 nm) of most nitrides. Slower cooling of duplex stainless steels to allow nitrogen partitioning is suggested in order to avoid large nitrides, and thereby produce a size distribution with a smaller detrimental effect on pitting resistance.

Hybrid metallic nanocomposites for extra wear-resistant diamond machining tools

DEFF Research Database (Denmark)

Loginov, P.A.; Sidorenko, D.A.; Levashov, E.A.

2018-01-01

The applicability of metallic nanocomposites as binder for diamond machining tools is demonstrated. The various nanoreinforcements (carbon nanotubes, boron nitride hBN, nanoparticles of tungsten carbide/WC) and their combinations are embedded into metallic matrices and their mechanical properties...... are determined in experiments. The wear resistance of diamond tools with metallic binders modified by various nanoreinforcements was estimated. 3D hierarchical computational finite element model of the tool binder with hybrid nanoscale reinforcements is developed, and applied for the structure...

A cubic boron nitride film-based fluorescent sensor for detecting Hg2+

Science.gov (United States)

Liu, W. M.; Zhao, W. W.; Zhang, H. Y.; Wang, P. F.; Chong, Y. M.; Ye, Q.; Zou, Y. S.; Zhang, W. J.; Zapien, J. A.; Bello, I.; Lee, S. T.

2009-05-01

Cubic boron nitride (cBN) film-based sensors for detecting Hg2+ ions were developed by surface functionalization with dansyl chloride. To immobilize dansyl chloride, 3-aminopropyltriethoxy silane was modified on hydroxylated cBN surfaces to form an amino-group-terminated self-assembled monolayer. The covalent attachment of the amino groups was confirmed by x-ray photoelectron spectroscopy. The selectivity and sensitivity of the sensors to detect diverse metal cations in ethanol solutions were studied by using fluorescence spectroscopy, revealing a great selectivity to Hg2+ ions. Significantly, the dansyl-chloride-functionalized cBN film sensors were recyclable after the sensing test.

Interaction of intermetallic compounds formed by rare earths, scandium, yttrium and 3d-transition metals, with gaseous ammonia

International Nuclear Information System (INIS)

Shilkin, S.P.; Volkova, L.S.

1992-01-01

Interaction of the RT n intermetallic compounds, where R Sc, Y, rare earths, T = Fe, Co, Ni; n = 2,3,5, with gaseous ammonia under pressure of 1MPa and at temperatures of 293, 723 and 798 K is studied. It is established on the basis of roentgenographic studied, chemical analysis data, X-ray photoelectron spectroscopy and specific surface measurements that metallic matrixes of intermetallides decompose into nitrides and transition metal phases at temperatures of 723 and 798 K under effect of ammonia and independent of structural types of the source materials; partial or complete decomposition of intermetallides through ammonia with formation of transition metal mixture, binary hydrides and nitrides of the most electropositive metal the above systems occurs at the temperature of 293 K depending on the heat of the source compounds and their tendency to decomposition under ammonia effect

Anomalous piezoelectricity in two-dimensional graphene nitride nanosheets.

Science.gov (United States)

Zelisko, Matthew; Hanlumyuang, Yuranan; Yang, Shubin; Liu, Yuanming; Lei, Chihou; Li, Jiangyu; Ajayan, Pulickel M; Sharma, Pradeep

2014-06-27

Piezoelectricity is a unique property of materials that permits the conversion of mechanical stimuli into electrical and vice versa. On the basis of crystal symmetry considerations, pristine carbon nitride (C3N4) in its various forms is non-piezoelectric. Here we find clear evidence via piezoresponse force microscopy and quantum mechanical calculations that both atomically thin and layered graphitic carbon nitride, or graphene nitride, nanosheets exhibit anomalous piezoelectricity. Insights from ab inito calculations indicate that the emergence of piezoelectricity in this material is due to the fact that a stable phase of graphene nitride nanosheet is riddled with regularly spaced triangular holes. These non-centrosymmetric pores, and the universal presence of flexoelectricity in all dielectrics, lead to the manifestation of the apparent and experimentally verified piezoelectric response. Quantitatively, an e11 piezoelectric coefficient of 0.758 C m(-2) is predicted for C3N4 superlattice, significantly larger than that of the commonly compared α-quartz.

Alkaline fuel cell with nitride membrane

Science.gov (United States)

Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

2017-06-01

The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

Research and development of nitride fuel cycle technology in Japan

International Nuclear Information System (INIS)

Minato, Kazuo; Arai, Yasuo; Akabori, Mitsuo; Tamaki, Yoshihisa; Itoh, Kunihiro

2004-01-01

The research on the nitride fuel was started for an advanced fuel, (U, Pn)N, for fast reactors, and the research activities have been expanded to minor actinide bearing nitride fuels. The fuel fabrication, property measurements, irradiation tests and pyrochemical process experiments have been made. In 2002 a five-year-program named PROMINENT was started for the development of nitride fuel cycle technology within the framework of the Development of Innovative Nuclear Technologies by the Ministry of Education, Culture, Sports, Science and Technology of Japan. In the research program PROMINENT, property measurements, pyrochemical process and irradiation experiments needed for nitride fuel cycle technology are being made. (author)

The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

2014-11-15

Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

Ag doped silicon nitride nanocomposites for embedded plasmonics

Energy Technology Data Exchange (ETDEWEB)

Bayle, M.; Bonafos, C., E-mail: bonafos@cemes.fr; Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, Cedex 04 (France); Khomenkova, L.; Gourbilleau, F. [CIMAP, CNRS/CEA/ENSICAEN/UCBN, 6 Boulevard Maréchal Juin, 14050 Caen, Cedex 4 (France)

2015-09-07

The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

Science.gov (United States)

Garg, Manjari; Naik, Tejas R.; Pathak, C. S.; Nagarajan, S.; Rao, V. Ramgopal; Singh, R.

2018-04-01

III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by ˜350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Corrosion stability of cermets on the base of titanium nitride

International Nuclear Information System (INIS)

Kajdash, O.N.; Marinich, M.A.; Kuzenkova, M.A.; Manzheleev, I.V.

1991-01-01

Corrosion resistance of titanium nitride and its cermets in 5% of HCl, 7% of HNO 3 , 10% of H 2 SO 4 is studied. It is established that alloys TiN-Ni-Mo alloyed with chromium (from 10 to 15%) possess the highest corrosion resistance. Cermet TiN-Cr has the higher stability than titanium nitride due to formation of binary nitride (Ti, Cr)N

Ion implantation and ion assisted coatings for wear resistance in metals

International Nuclear Information System (INIS)

Dearnaley, G.

1986-01-01

The implantation of electrically accelerated ions of chosen elements into the surface of material provides a method for improving surface properties such as wear resistance. High concentrations of nitrogen implanted into metals create obstacles to dislocation movement, and certain combinations of metallic and non-metallic species will also strengthen the surface. The process is best applied to situations involving mild abrasive wear and operating temperatures that are not too high. Some dramatic increases in life have been reported under such favourable conditions. A more recent development has been the combination of a thin coating with reactive ion bombardment designed to enhance adhesion by ion mixing at the interface and so provide hardness by the formation of finely dispersed nitrides, including cubic boron nitride. These coatings often possess vivid and decorative colours as an added benefit. Developments in the equipment for industrial ion implantation now offer more attractive costs per unit area and a potentially greater throughput of work. A versatile group of related hard vacuum treatments is now emerging, involving the use of intense beams of nitrogen ions for the purpose of tailoring metal surfaces to resist wear. (author)

Mineralizer-assisted high-pressure high-temperature synthesis and characterization of novel phosphorus nitride imides and luminescent alkaline earth metal (oxo)nitridophosphates

International Nuclear Information System (INIS)

Marchuk, Alexey

2016-01-01

The main objectives of this thesis were the synthesis, identification and structural characterization of new alkaline earth metal (oxo)nitridophopshates and phosphorus nitrides. Furthermore, luminescence properties of the resulting materials should be investigated and a connection between these properties and the respective structures should be established. For this purpose, a range of synthesis strategies was employed, including conventional solid-state syntheses in silica ampoules and high-pressure high-temperature syntheses using the multianvil technique. The emphasis of the synthetic part of this thesis lies on the development of new synthetic strategies in order to increase crystallinity of alkaline earth metal (oxo)nitridophosphates and thus accelerate their structure determination. This involves the selection of a suitable mineralizer and the investigation of its interaction with the respective starting materials. In addition, the analytical methods applied in this thesis in order to identify and characterize the compounds are just as essential as the synthesis strategies. X-ray diffraction on single crystals and on powders was carried out as the main analytical method while being supported by quantitative and qualitative 1 H and 31 P solid-state NMR measurements, FTIR and energy-dispersive X-ray (EDX) spectroscopy, as well as electron microscopy methods including both imaging and diffraction techniques. Implied by the large number of novel structures investigated, theoretical studies including topological analysis, calculations of lattice energies and bond-valence sums also played a major role in this thesis. Optical analysis methods such as reflectance spectroscopy, luminescence microscopy and photoluminescence measurements helped to determine the luminescence properties of some of the presented compounds.

Microstructural characterization of pulsed plasma nitrided 316L stainless steel

International Nuclear Information System (INIS)

Asgari, M.; Barnoush, A.; Johnsen, R.; Hoel, R.

2011-01-01

Highlights: → The low temperature pulsed plasma nitrided layer of 316 SS was studied. → The plastic deformation induced in the austenite due to nitriding is characterized by EBSD at different depths (i.e., nitrogen concentration). → Nanomechanical properties of the nitride layer was investigated by nanoindentation at different depths (i.e., nitrogen concentration). → High hardness, high nitrogen concentration and high dislocation density is detected in the nitride layer. → The hardness and nitrogen concentration decreased sharply beyond the nitride layer. - Abstract: Pulsed plasma nitriding (PPN) treatment is one of the new processes to improve the surface hardness and tribology behavior of austenitic stainless steels. Through low temperature treatment (<440 deg. C), it is possible to obtain unique combinations of wear and corrosion properties. Such a combination is achieved through the formation of a so-called 'extended austenite phase'. These surface layers are often also referred to as S-phase, m-phase or γ-phase. In this work, nitrided layers on austenitic stainless steels AISI 316L (SS316L) were examined by means of a nanoindentation method at different loads. Additionally, the mechanical properties of the S-phase at different depths were studied. Electron back-scatter diffraction (EBSD) examination of the layer showed a high amount of plasticity induced in the layer during its formation. XRD results confirmed the formation of the S-phase, and no deleterious CrN phase was detected.

The Influence of Plasma-Based Nitriding and Oxidizing Treatments on the Mechanical and Corrosion Properties of CoCrMo Biomedical Alloy

Science.gov (United States)

Noli, Fotini; Pichon, Luc; Öztürk, Orhan

2018-04-01

Plasma-based nitriding and/or oxidizing treatments were applied to CoCrMo alloy to improve its surface mechanical properties and corrosion resistance for biomedical applications. Three treatments were performed. A set of CoCrMo samples has been subjected to nitriding at moderate temperatures ( 400 °C). A second set of CoCrMo samples was oxidized at 395 °C in pure O2. The last set of CoCrMo samples was nitrided and subsequently oxidized under the experimental conditions of previous sets (double treatment). The microstructure and morphology of the layers formed on the CoCrMo alloy were investigated by X-ray diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy. In addition, nitrogen and oxygen profiles were determined by Glow Discharge Optical Emission Spectroscopy, Rutherford Backscattering Spectroscopy, Energy-Dispersive X-ray, and Nuclear Reaction Analysis. Significant improvement of the Vickers hardness of the CoCrMo samples after plasma nitriding was observed due to the supersaturated nitrogen solution and the formation of an expanded FCC γ N phase and CrN precipitates. In the case of the oxidized samples, Vickers hardness improvement was minimal. The corrosion behavior of the samples was investigated in simulated body fluid (0.9 pct NaCl solution at 37 °C) using electrochemical techniques (potentiodynamic polarization and cyclic voltammetry). The concentration of metal ions released from the CoCrMo surfaces was determined by Instrumental Neutron Activation Analysis. The experimental results clearly indicate that the CoCrMo surface subjected to the double surface treatment consisting in plasma nitriding and plasma oxidizing exhibited lower deterioration and better resistance to corrosion compared to the nitrided, oxidized, and untreated samples. This enhancement is believed to be due to the formation of a thicker and more stable layer.

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

National Research Council Canada - National Science Library

Holmes, Kenneth

2002-01-01

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

Gold film with gold nitride - A conductor but harder than gold

International Nuclear Information System (INIS)

Siller, L.; Peltekis, N.; Krishnamurthy, S.; Chao, Y.; Bull, S.J.; Hunt, M.R.C.

2005-01-01

The formation of surface nitrides on gold films is a particularly attractive proposition, addressing the need to produce harder, but still conductive, gold coatings which reduce wear but avoid the pollution associated with conventional additives. Here we report production of large area gold nitride films on silicon substrates, using reactive ion sputtering and plasma etching, without the need for ultrahigh vacuum. Nanoindentation data show that gold nitride films have a hardness ∼50% greater than that of pure gold. These results are important for large-scale applications of gold nitride in coatings and electronics

Ion beam modification of sputtered metal nitride thin films: A study of the induced microstructural changes

International Nuclear Information System (INIS)

Milosavljevic, M.; Perusko, D.; Popovic, M.; Novakovic, M.

2008-01-01

Single CrN and TiN and multilayered AlN/TiN and Al/Ti thin film structures (t = 240-280 nm) deposited on Si were irradiated with 120-200 keV Ar + ions to the fluences ranging from 1 x 10 11 5 to 4 x 10 16 ions/cm 2 . The metallic Al/Ti multilayered structure was also irradiated with high fluence (1- 2 x 10 17 /cm 2 ) nitrogen ions at 200 keV, in order to study interface mixing and formation of nitrides. Single component CrN and TiN thin films were found to grow in the form of a very fine polycrystalline columnar structures. Individual crystal grains were of the order of a few tens of nm in diameter, stretching from the substrate to the surface. After ion irradiation, the layers retain their polycrystalline structure, although the columns become disconnected, the resulting structures consisting of larger grains and nano-particles of the same phase. The implanted samples displayed higher electrical resistivity, presumably due to a higher concentration of point defects and the presence of nano-particles. In Al/Ti and AlN/TiN multilayers irradiated with Ar ions, the as-deposited structures exhibit well-defined, isolated polycrystalline Al and Ti, or AlN and TiN layers, with sharp interfaces. In the metallic system ion irradiation induced interface mixing which progressed with increasing the ion fluence. Mixing was most pronounced at the interfaces that are located around the projected ion range. The multilayered structure was essentially preserved, but the implanted samples exhibit much larger crystal grains. Also, the formation of lamellar columns stretching over a number of individual layers was observed. The AlN/TiN multilayered structures exhibited no measurable interface mixing on Ar irradiation, attributable to the nature of interatomic bonding and to mutual immiscibility of AlN and TiN. High fluence nitrogen ion irradiation of Al/Ti multilayers results in both the introduction of nitrogen into the structures as well as a high level of their intermixing. A

The Effect of Polymer Char on Nitridation Kinetics of Silicon

Science.gov (United States)

Chan, Rickmond C.; Bhatt, Ramakrishna T.

1994-01-01

Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

Preparation and chemical stability of iron-nitride-coated iron microparticles

International Nuclear Information System (INIS)

Luo Xin; Liu Shixiong

2007-01-01

Iron-nitride-coated iron microparticles were prepared by nitridation of the surface of iron microparticles with ammonia gas at a temperature of 510 deg. C. The phases, composition, morphology, magnetic properties, and chemical stability of the particles were studied. The phases were α-Fe, ε-Fe 3 N, and γ-Fe 4 N. The composition varied from the core to the surface, with 99.8 wt% Fe in the core, and 93.8 wt% Fe and 6 wt% N in the iron-nitride coating. The thickness of the iron-nitride coating was about 0.28 μm. The chemical stability of the microparticles was greatly improved, especially the corrosion resistance in corrosive aqueous media. The saturation magnetization and the coercive force were 17.1x10 3 and 68 kA/m, respectively. It can be concluded that iron-nitride-coated iron microparticles will be very useful in many fields, such as water-based magnetorheological fluids and polishing fluids

An assessment of the thermodynamic properties of uranium nitride, plutonium nitride and uranium-plutonium mixed nitride

International Nuclear Information System (INIS)

Matsui, T.; Ohse, R.W.

1986-01-01

Thermodynamic properties such as vapour pressures, heat capacities and enthalpies of formation for UN(s), PuN(s) and (U, Pu)N(s) are critically evaluated. The equations of the vapour pressures and the heat capacities for the three nitrides are assessed. Thermal functions, and thermodynamic functions for the formation of UN(s), PuN(s) and (U, Pu)N(s), are calculated

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

2017-04-01

Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Intragranular Chromium Nitride Precipitates in Duplex and Superduplex Stainless Steel

OpenAIRE

Iversen, Torunn Hjulstad

2012-01-01

Intragranular chromium nitrides is a phenomenon with detrimental effects on material properties in superduplex stainless steels which have not received much attention. Precipitation of nitrides occurs when the ferritic phase becomes supersaturated with nitrogen and there is insufficient time during cooling for diffusion of nitrogen into austenite. Heat treatment was carried out at between 1060◦C and 1160◦C to study the materials susceptibility to nitride precipitation with...

Electronic Biosensors Based on III-Nitride Semiconductors.

Science.gov (United States)

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

Directory of Open Access Journals (Sweden)

Yang-Zhe Su

2018-06-01

Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

The role of titanium aluminide in n-gallium nitride ohmic contact technology

Science.gov (United States)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

On the effect of pre-oxidation on the nitriding kinetics

DEFF Research Database (Denmark)

Friehling, Peter Bernhard; Somers, Marcel A. J.

2000-01-01

The oxidation of ferritic surfaces prior to gaseous nitriding has been reported to lead to improved uniformity of the compound layer thickness and enhanced nitriding kinetics. The present work considers the nucleation and growth of a model compound layer on pure iron and, using previous...... experimental and theoretical work reported in the literature, puts forward two hypotheses to explain the effects of pre-oxidation on compound layer formation. It is proposed that the nucleation of iron nitrides is enhanced by the presence of an iron-oxide layer and that the growth of an iron-nitride layer...... proceeds faster after pre-oxidation, due to a higher nitrogen content in the part of the compound layer closest to the surface....

Polymeric carbon nitride/mesoporous silica composites as catalyst support for Au and Pt nanoparticles.

Science.gov (United States)

Xiao, Ping; Zhao, Yanxi; Wang, Tao; Zhan, Yingying; Wang, Huihu; Li, Jinlin; Thomas, Arne; Zhu, Junjiang

2014-03-03

Small and homogeneously dispersed Au and Pt nanoparticles (NPs) were prepared on polymeric carbon nitride (CNx )/mesoporous silica (SBA-15) composites, which were synthesized by thermal polycondensation of dicyandiamide-impregnated preformed SBA-15. By changing the condensation temperature, the degree of condensation and the loading of CNx can be controlled to give adjustable particle sizes of the Pt and Au NPs subsequently formed on the composites. In contrast to the pure SBA-15 support, coating of SBA-15 with polymeric CNx resulted in much smaller and better-dispersed metal NPs. Furthermore, under catalytic conditions the CNx coating helps to stabilize the metal NPs. However, metal NPs on CNx /SBA-15 can show very different catalytic behaviors in, for example, the CO oxidation reaction. Whereas the Pt NPs already show full CO conversion at 160 °C, the catalytic activity of Au NPs seems to be inhibited by the CNx support. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Science.gov (United States)

Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

2015-12-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

International Nuclear Information System (INIS)

Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

2015-01-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Energy Technology Data Exchange (ETDEWEB)

Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

2015-12-15

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

The wear and corrosion resistance of shot peened-nitrided 316L austenitic stainless steel

International Nuclear Information System (INIS)

Hashemi, B.; Rezaee Yazdi, M.; Azar, V.

2011-01-01

Research highlights: → Shot peening-nitriding increased the wear resistance and surface hardness of samples. → This treatment improved the surface mechanical properties. → Shot peening alleviates the adverse effects of nitriding on the corrosion behavior. -- Abstract: 316L austenitic stainless steel was gas nitrided at 570 o C with pre-shot peening. Shot peening and nitriding are surface treatments that enhance the mechanical properties of surface layers by inducing compressive residual stresses and formation of hard phases, respectively. The structural phases, micro-hardness, wear behavior and corrosion resistance of specimens were investigated by X-ray diffraction, Vickers micro-hardness, wear testing, scanning electron microscopy and cyclic polarization tests. The effects of shot peening on the nitride layer formation and corrosion resistance of specimens were studied. The results showed that shot peening enhanced the nitride layer formation. The shot peened-nitrided specimens had higher wear resistance and hardness than other specimens. On the other hand, although nitriding deteriorated the corrosion resistance of the specimens, cyclic polarization tests showed that shot peening before the nitriding treatment could alleviate this adverse effect.

Structural, mechanical and electronic properties of 3d transition metal nitrides in cubic zincblende, rocksalt and cesium chloride structures: a first-principles investigation

International Nuclear Information System (INIS)

Liu, Z T Y; Khare, S V; Zhou, X; Gall, D

2014-01-01

We report systematic results from ab initio calculations with density functional theory on three cubic structures, zincblende (zb), rocksalt (rs) and cesium chloride (cc), of the ten 3d transition metal nitrides. We computed lattice constants, elastic constants, their derived moduli and ratios that characterize mechanical properties. Experimental measurements exist in the literature of lattice constants for rs-ScN, rs-TiN and rs-VN and of elastic constants for rs-TiN and rs-VN, all of which are in good agreement with our computational results. Similarly, computed Vickers hardness (H V ) values for rs-TiN and rs-VN are consistent with earlier experimental results. Several trends were observed in our rich data set of 30 compounds. All nitrides, except for zb-CrN, rs-MnN, rs-FeN, cc-ScN, cc-CrN, cc-NiN and cc-ZnN, were found to be mechanically stable. A clear correlation in the atomic density with the bulk modulus (B) was observed with maximum values of B around FeN, MnN and CrN. The shear modulus, Young’s modulus, H V and indicators of brittleness showed similar trends and all showed maxima for cc-VN. The calculated value of H V for cc-VN was about 30 GPa, while the next highest values were for rs-ScN and rs-TiN, about 24 GPa. A relation (H V ∝θ D 2 ) between H V and Debye temperature (θ D ) was investigated and verified for each structure type. A tendency for anti-correlation of the elastic constant C 44 , which strongly influences stability and hardness, with the number of electronic states around the Fermi energy was observed. (paper)

Martensitic Stainless Steels Low-temperature Nitriding: Dependence of Substrate Composition

OpenAIRE

Ferreira, Lauro Mariano; Brunatto, Silvio Francisco; Cardoso, Rodrigo Perito

2015-01-01

Low-temperature plasma assisted nitriding is a very promising technique to improve surface mechanical properties of stainless steels, keeping unaltered or even improving their surface corrosion resistance. During treatment, nitrogen diffuses into the steel surface, increasing its hardness and wear resistance. In the present work the nitriding process of different martensitic stainless steels was studied. As-quenched AISI 410, 410NiMo, 416 and 420 stainless steel samples were plasma nitrided a...

Dissolution performance of plutonium nitride based fuel materials

Energy Technology Data Exchange (ETDEWEB)

Aneheim, E.; Hedberg, M. [Nuclear Chemistry, Chemistry and Chemical Engineering, Chalmers University of Technology, Kemivaegen 4, Gothenburg, SE41296 (Sweden)

2016-07-01

Nitride fuels have been regarded as one viable fuel option for Generation IV reactors due to their positive features compared to oxides. To be able to close the fuel cycle and follow the Generation IV concept, nitrides must, however, demonstrate their ability to be reprocessed. This means that the dissolution performance of actinide based nitrides has to be thoroughly investigated and assessed. As the zirconium stabilized nitrides show even better potential as fuel material than does the pure actinide containing nitrides, investigations on the dissolution behavior of both PuN and (Pu,Zr)N has been undertaken. If possible it is desirable to perform the fuel dissolutions using nitric acid. This, as most reprocessing strategies using solvent-solvent extraction are based on a nitride containing aqueous matrix. (Pu,Zr)N/C microspheres were produced using internal gelation. The spheres dissolution performance was investigated using nitric acid with and without additions of HF and Ag(II). In addition PuN fuel pellets were produced from powder and their dissolution performance were also assessed in a nitric acid based setting. It appears that both PuN and (Pu,Zr)N/C fuel material can be completely dissolved in nitric acid of high concentration with the use of catalytic amounts of HF. The amount of HF added strongly affects dissolution kinetics of (Pu, Zr)N and the presence of HF affects the 2 solutes differently, possibly due to inhomogeneity o the initial material. Large additions of Ag(II) can also be used to facilitate the dissolution of (Pu,Zr)N in nitric acid. PuN can be dissolved by pure nitric acid of high concentration at room temperature while (Pu, Zr)N is unaffected under similar conditions. At elevated temperature (reflux), (Pu,Zr)N can, however, also be dissolved by concentrated pure nitric acid.

Plasma nitriding of a precipitation hardening stainless steel to improve erosion and corrosion resistance

International Nuclear Information System (INIS)

Cabo, Amado; Bruhl, Sonia P.; Vaca, Laura S.; Charadia, Raul Charadia

2010-01-01

Precipitation hardening stainless steels are used as structural materials in the aircraft and the chemical industry because of their good combination of mechanical and corrosion properties. The aim of this work is to analyze the structural changes produced by plasma nitriding in the near surface of Thyroplast PH X Supra®, a PH stainless steel from ThyssenKrupp, and to study the effect of nitriding parameters in wear and corrosion resistance. Samples were first aged and then nitriding was carried out in an industrial facility at two temperatures, with two different nitrogen partial pressures in the gas mixture. After nitriding, samples were cut, polished, mounted in resin and etched with Vilella reagent to reveal the nitrided case. Nitrided structure was also analyzed with XRD. Erosion/Corrosion was tested against sea water and sand flux, and corrosion in a salt spray fog (ASTM B117). All nitrided samples presented high hardness. Samples nitrided at 390 deg C with different nitrogen partial pressure showed similar erosion resistance against water and sand flux. The erosion resistance of the nitrided samples at 500 deg C was the highest and XRD revealed nitrides. Corrosion resistance, on the contrary, was diminished; the samples suffered of general corrosion during the salt spray fog test. (author)

Molecular dynamics studies of actinide nitrides

International Nuclear Information System (INIS)

Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

2004-01-01

The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

Performance analysis of nitride alternative plasmonic materials for localized surface plasmon applications

DEFF Research Database (Denmark)

Guler, U.; Naik, G. V.; Boltasseva, Alexandra

2012-01-01

. Titanium nitride and zirconium nitride, which were recently suggested as alternative plasmonic materials in the visible and near-infrared ranges, are compared to the performance of gold. In contrast to the results from quasistatic methods, both nitride materials are very good alternatives to the usual...

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

Science.gov (United States)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

An introduction to surface alloying of metals

CERN Document Server

Hosmani, Santosh S; Goyal, Rajendra Kumar

2014-01-01

An Introduction to Surface Alloying of Metals aims to serve as a primer to the basic aspects of surface alloying of metals. The book serves to elucidate fundamentals of surface modification and their engineering applications. The book starts with basics of surface alloying and goes on to cover key surface alloying methods, such as carburizing, nitriding, chromizing, duplex treatment, and the characterization of surface layers. The book will prove useful to students at both the undergraduate and graduate levels, as also to researchers and practitioners looking for a quick introduction to surface alloying.

Elaboration of titanium nitride coatings by activated reactive evaporation

International Nuclear Information System (INIS)

Granier, Jean

1978-01-01

As titanium nitride is a very interesting and promising material for the protection against wear and corrosion of metals and alloys with a low fusion point, and notably steels, this research thesis reports the study of the elaboration of a TiN coating by activated reactive evaporation. In a first part, the author describes deposition processes based on evaporation and their characteristics. He explains the choice of the studied process. He discusses published data and results related to the titanium-nitrogen system. He describes the apparatus and reports the operation mode adjustment, and reports the study of the influence of operating conditions (substrate temperature, nitrogen pressure, evaporation rate, possible use of a discharge) on growth kinetics and on coating properties. A reaction mechanism is then proposed to describe and explain the obtained results [fr

On monosubstituted cyanurate complexes of transition metals

International Nuclear Information System (INIS)

Sejfer, G.B.; Tarasova, Z.A.

1995-01-01

Complex monosubstituted cyanurates of transition metals K 2 [Eh(H 2 C 3 N 3 O 3 ) 4 ]x4H 2 ) where Eh = Mn, Co, Ni, Cu, Zn, Cd are synthesized and investigated by means of IR - spectroscopy and thermal analysis methods. It is shown that only thermal decomposition of a manganese complex leads to the production of this metal oxide. All other derivatives decompose with the production of a free metal, because decomposition of these substances in argon atmosphere occurs through an intermediate production of their nitrides. An assumption is made that nitroduction of yttrium or rare earth element salts (instead of transition or alkali metal derivatives) as accelerating additions will facilitate increase of polyisocyanurate resin thermal stability. 25 refs.; 2 figs.; 3 tabs

Enhanced X-ray yields in PIXE analysis of some binary metal fluorides

International Nuclear Information System (INIS)

Peisach, M.; Pineda, C.A.; Pillay, A.E.

1993-01-01

Enhanced X-ray yields from the metal components of homogeneous thick targets of binary metal fluorides were observed during PIXE irradiations with protons, deuterons and 3 He ions. The absence of these effects in the pure metals and in the corresponding metal oxides, nitrides and borides suggests that the fluoride component in such compounds plays a key role in producing the enhancement. Coulomb excitation of the extremely low-lying levels of the fluorine nucleus is discussed as a possible mechanism for the improved yields via secondary excitation. (orig.)

Mechanisms of hydrogen retention in metallic beryllium and beryllium oxide and properties of ion-induced beryllium nitride; Rueckhaltemechanismen fuer Wasserstoff in metallischem Beryllium und Berylliumoxid sowie Eigenschaften von ioneninduziertem Berylliumnitrid

Energy Technology Data Exchange (ETDEWEB)

Oberkofler, Martin

2011-09-22

In the framework of this thesis laboratory experiments on atomically clean beryllium surfaces were performed. They aim at a basic understanding of the mechanisms occurring upon interaction of a fusion plasma with a beryllium first wall. The retention and the temperature dependent release of implanted deuterium ions are investigated. An atomistic description is developed through simulations and through the comparison with calculations based on density functional theory. The results of these investigations are compared to the behaviour of hydrogen upon implantation into thermally grown beryllium oxide layers. Furthermore, beryllium nitride is produced by implantation of nitrogen into metallic beryllium and its properties are investigated. The results are interpreted with regard to the use of beryllium in a fusion reactor. (orig.)

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

Energy Technology Data Exchange (ETDEWEB)

Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

Characterisation of titanium nitride films obtained by metalorganic chemical vapor deposition (MOCVD); Caracterizacao de filmes de nitreto de titanio obtidos por MOCVD

Energy Technology Data Exchange (ETDEWEB)

Pillis, M.F., E-mail: mfpillis@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Franco, A.C. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Araujo, E.G. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Sacilotti, M. [Universidade Federal de Pernambuco (IF/UFPE), Recife, PE (Brazil). Inst. de Fisica; Fundacao de Amparo a Ciencia e Tecnologia de Pernambuco (FACEPE), Recife, PE (Brazil)

2009-07-01

Ceramic coatings have been widely used as protective coating to improve the life of cutting tools, for corrosion protection and in microelectronics, optical and medical areas. Transition metals nitrides are of special interest due to its high hardness and thermal stability. In this work thin films of titanium nitride were obtained by MOCVD (metalorganic chemical vapor deposition) process. The tests were carried out for 1h at 700 deg C under 80 and 100 mbar of pressure. The characterization was made by using scanning electron microscopy coupled with dispersive energy analysis, and X-ray diffraction. Preliminary results suggested that Ti{sub 2}N phase was formed and that the growth rate varied between 4 and 13 nm/min according to the process parameter considered. (author)

Suspended HfO2 photonic crystal slab on III-nitride/Si platform

International Nuclear Information System (INIS)

Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

2014-01-01

We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

Nitride surface passivation of GaAs nanowires: impact on surface state density.

Science.gov (United States)

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Ion-nitriding of austenitic stainless steels

International Nuclear Information System (INIS)

Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

1995-01-01

Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

Nitridomanganates of alkaline-earth metals. Synthesis, structure, and physical properties

Energy Technology Data Exchange (ETDEWEB)

Ovchinnikov, Alexander

2016-12-02

The main goal of the present work was the synthesis of alkaline-earth nitridomanganates (AE{sub x}Mn{sub y}N{sub z}) with extended anionic structures and the characterization of their electronic and magnetic properties. Up to now, only compounds with isolated nitridomanganate anions have been reported in the discussed ternary systems. A systematic exploratory synthesis, employing high-temperature treatment of AE nitrides and Mn under controlled N2 pressure, yielded more than ten new nitridomanganates. Their crystal structures contain anionic building blocks of different dimensionalities, ranging from isolated species to three-dimensional frameworks. In general, the formation of Mn-rich compositions was found to be driven by the emergence of Mn-Mn interactions, which creates a link between nitridometalates and transition-metal-rich binary nitrides. The obtained nitridomanganates display a plethora of interesting phenomena, such as large spin-orbit coupling, magnetic frustration, quenching of magnetism due to Mn-Mn interactions, and metal-insulator transition.

Reaction-bonded silicon nitride

International Nuclear Information System (INIS)

Porz, F.

1982-10-01

Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

Low Temperature Gaseous Nitriding of a Stainless Steel Containing Strong Nitride Formers

DEFF Research Database (Denmark)

Fernandes, Frederico Augusto Pires; Christiansen, Thomas Lundin; Somers, Marcel A. J.

Low temperature thermochemical surface hardening of the precipitation hardening austenitic stainless steel A286 in solution treated state was investigated. A286 contains, besides high amounts of Cr, also substantial amounts of strong nitride formers as Ti, Al and V. It is shown that simultaneous...

Fabrication of functional structures on thin silicon nitride membranes

NARCIS (Netherlands)

Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

MoS{sub 2}-coated microspheres of self-sensitized carbon nitride for efficient photocatalytic hydrogen generation under visible light irradiation

Energy Technology Data Exchange (ETDEWEB)

Gu, Quan [Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710062 (China); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Sun, Huaming; Xie, Zunyuan; Gao, Ziwei [Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710062 (China); Xue, Can, E-mail: cxue@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2017-02-28

Highlights: • Successful coating of MoS{sub 2} onto self-sensitized carbon nitride microspheres. • The carbon nitride@MoS{sub 2} core-shell structure show enhanced H{sub 2} generation in visible light. • Synergistic effect of surface dyes and MoS{sub 2} coating enhances photocatalytic activities. - Abstract: We have successfully coated the self-sensitized carbon nitride (SSCN) microspheres with a layer of MoS{sub 2} through a facile one-pot hydrothermal method by using (NH{sub 4}){sub 2}MoS{sub 4} as the precursor. The resulted MoS{sub 2}-coated SSCN photocatalyst appears as a core-shell structure and exhibits enhanced visible-light activities for photocatalytic H{sub 2} generation as compared to the un-coated SSCN and the standard g-C{sub 3}N{sub 4} reference with MoS{sub 2} coating. The photocatalytic test results suggest that the oligomeric s-triazine dyes on the SSCN surface can provide additional light-harvesting capability and photogenerated charge carriers, and the coated MoS{sub 2} layer can serve as active sites for proton reduction towards H{sub 2} evolution. This synergistic effect of surface triazine dyes and MoS{sub 2} coating greatly promotes the activity of carbon nitride microspheres for vishible-light-driven H{sub 2} generation. This work provides a new way of future development of low-cost noble-metal-free photocatalysts for efficient solar-driven hydrogen production.

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Estimation of tribological anticorrosion properties of impregnated nitriding layers

International Nuclear Information System (INIS)

Iwanow, J.; Senatorski, J.; Tacikowski, J.

1999-01-01

In this paper is described aim, experimental and test result of tribological anticorrosion properties of thin nitriding layer (12.5 μm) obtained on 45 steel grade in controlled gas-nitriding process (570 o C, 4 h) impregnated with oil-based formulations, containing corrosion inhibitor BS-43, modified with tribological additives based on ashen organometallic compounds as well as ash-free organic compounds. It was stated, that tribological additives does not influence, in fact, on behaviour of corrosion resistance of nitriding layers impregnated with oil-base formulations mainly connected with inhibitor BS-43. Synergy of tribological additive and corrosion inhibitor is however more visible in modelling of wear resistance of nitriding layer. The influence nature of tribological additives in combination with corrosion inhibitor BS-43 is dependent on their kind and as result improves or worsens the wear resistance by friction. Hence in choice of impregnated formulation, which is enable to accomplish of tribological anticorrosion requirements, determined, above all, tribological additive. (author)

Thermodynamics, kinetics and process control of nitriding

DEFF Research Database (Denmark)

Mittemeijer, Eric J.; Somers, Marcel A. J.

1997-01-01

As a prerequisite for the predictability of properties obtained by a nitriding treatment of iron based workpieces, the relation between the process parameters and the composition and structure of the surface layer produced must be known. At present, even the description of thermodynamic equilibrium...... of pure Fe-N phases has not been fully achieved. It is shown that taking into account the ordering of nitrogen in the epsilon and gamma' iron nitride phases leads to an improved understanding of the Fe-N phase diagram. Although consideration of thermodynamics indicates the state the system strives for...... for process control of gaseous nitriding by monitoring the partial pressure of oxygen in the furnace using a solid state electrolyte is provided. At the time the work was carried out the authors were in the Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft...

Preparing microspheres of actinide nitrides from carbon containing oxide sols

International Nuclear Information System (INIS)

Triggiani, L.V.

1975-01-01

A process is given for preparing uranium nitride, uranium oxynitride, and uranium carboxynitride microspheres and the microspheres as compositions of matter. The microspheres are prepared from carbide sols by reduction and nitriding steps. (Official Gazette)

Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer

International Nuclear Information System (INIS)

Hakami, F.; Sohi, M. Heydarzadeh; Ghani, J. Rasizadeh

2011-01-01

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273 K for 5 h. The samples were then plasma-nitrided for 5 h at 803 K and 823 K, in a gas mixture of 75%N 2 + 25%H 2 . The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8 μm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layers was significantly higher than the hardness of the base material or chromized layer. The main cause of the large improvement in surface hardness was due to the formation of Cr x N and Fe x N phases in the duplex treated layers. Increasing of nitriding temperature from 803 to 823 K enhanced the formation of CrN in the duplex treated layer and increased the thickness of the nitrided layer.

Mechanical properties of molybdenum-titanium alloys micro-structurally controlled by multi-step internal nitriding

International Nuclear Information System (INIS)

Nagae, M.; Yoshio, T.; Takemoto, Y.; Takada, J.; Hiraoka, Y.

2001-01-01

Internally nitrided dilute Mo-Ti alloys having a heavily deformed microstructure near the specimen surface were prepared by a novel two-step nitriding process at 1173 to 1773 K in N 2 gas. For the nitrided specimens three-point bend tests were performed at temperatures from 77 to 298 K in order to investigate the effect of microstructure control by internal nitriding on the ductile-to-brittle transition temperature (DBTT) of the alloy Yield strength obtained at 243 K of the specimen maintaining the deformed microstructure by the two-step nitriding was about 1.7 times as much as recrystallized specimen. The specimen subjected to the two-step nitriding was bent more than 90 degree at 243 K, whereas recrystallized specimen was fractured after showing a slight ductility at 243 K. DBTT of the specimen subjected to the two-step nitriding and recrystallized specimen was about 153 K and 203 K, respectively. These results indicate that multi-step internal nitriding is very effective to the improvement in the embrittlement by the recrystallization of molybdenum alloys. (author)

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Titanium Matrix Composite Ti/TiN Produced by Diode Laser Gas Nitriding

Directory of Open Access Journals (Sweden)

Aleksander Lisiecki

2015-01-01

Full Text Available A high power direct diode laser, emitting in the range of near infrared radiation at wavelength 808–940 nm, was applied to produce a titanium matrix composite on a surface layer of titanium alloy Ti6Al4V by laser surface gas nitriding. The nitrided surface layers were produced as single stringer beads at different heat inputs, different scanning speeds, and different powers of laser beam. The influence of laser nitriding parameters on the quality, shape, and morphology of the surface layers was investigated. It was found that the nitrided surface layers consist of titanium nitride precipitations mainly in the form of dendrites embedded in the titanium alloy matrix. The titanium nitrides are produced as a result of the reaction between molten Ti and gaseous nitrogen. Solidification and subsequent growth of the TiN dendrites takes place to a large extent at the interface of the molten Ti and the nitrogen gas atmosphere. The direction of TiN dendrites growth is perpendicular to the surface of molten Ti. The roughness of the surface layers depends strongly on the heat input of laser nitriding and can be precisely controlled. In spite of high microhardness up to 2400 HV0.2, the surface layers are crack free.

Kinetic parameters of nitridation of molybdenum and niobium alloys with various structure states

International Nuclear Information System (INIS)

Solodkin, G.A.; Bulgach, A.A.; Likhacheva, T.E.

1985-01-01

Effect of preliminary plastic strain under rolling on kinetic parameters of nitridation of VN-2AEh, VN-3 niobium alloys and molybdenum alloy with hafnium is investigated. Extreme character of dependence of kinetic parameters of nitridation on the degree of reduction under rolling is determined. Preliminary plastic strain at negligible reduction is shown to accelerate growth of the zone of internal nitridation and decelerates growth of the nitride zone. Nitrogen atom removal from the surface to the centre is retarded at the increase of the degree of reduction up to 50% and higher. The degree of deformations is the higher the lower nitridation temperature is

Preparation and characterization of morph-genetic aluminum nitride/carbon composites from filter paper

International Nuclear Information System (INIS)

Wang Wei; Xue Tao; Jin Zhihao; Qiao Guanjun

2008-01-01

Morph-genetic aluminum nitride/carbon composites with cablelike structure were prepared from filter paper template through the surface sol-gel process and carbothermal nitridation reaction. The resulting materials have a hierarchical structure originating from the morphology of cellulose paper. The aluminum nitride/carbon composites have the core-shell microstructure, the core is graphitic carbon, and the shell is aluminum nitride nanocoating formed by carbothermal nitridation reduction of alumina with the interfacial carbon in nitrogen atmosphere. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscope were employed to characterize the structural morphology and phase compositions of the final products

Mechanical properties and corrosion resistance of supermartensitic stainless steel surfaces nitrided by plasma immersion ion implantation

Energy Technology Data Exchange (ETDEWEB)

Schibicheski, Bruna Corina Emanuely; Souza, Gelson Biscaia de; Oliveira, Willian Rafael de; Serbena, Francisco Carlos, E-mail: bruna_schibicheski@hotmail.com [Universidade Estadual de Ponta Grossa (UEPG), PR (Brazil); Marino, Cláudia E.B. [Universidade Federal do Paraná (UFPR), Curitiba, PR (Brazil)

2016-07-01

Full text: The supermartensitic stainless steel UNS S41426 is employed in marine oil and gas extraction ducts, where it is subjected to severe conditions of temperature, pressure and exposure to corrosive agents (as the H{sub 2}S). In such environments, pitting corrosion is a major cause of degradation of metallic alloys [1]. This work investigated the effectiveness of the nitrogen inlet, attained here by the plasma immersion ion implantation (PIII) technique, in improving the mechanical properties and corrosion resistance of the material surface. Samples were initially austenitized at 1100°C with a subsequent room temperature oil quenching in order to obtain a fully martensitic structure. The nitriding was carried out under 10 kV implantation energy and 30 ms pulse width. The temperatures ranged from 300 °C to 400°C, achieved by controlling the pulse repetition rates. Samples were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, instrumented indentation, scanning electron microscopy, potentiodynamic anodic polarization tests (in NaCl solution), and cathodic hydrogenation tests (in H{sub 2}SO{sub 4} solution). The PIII nitriding produced stratified layers up to 30 mm thick containing nitrogen expanded martensite and iron nitride phases (γ’-Fe{sub 4}N, ε- Fe{sub 2+x}N), depending on the treatment temperature. Consequently, the surface hardness increased from ∼3GPa (reference) up to ∼13GPa (400°C). Regarding the corrosion resistance, the nitrided surfaces presented a significant improvement as compared with the pristine surface, evidenced by the increase of the corrosion potential, which was also correlated to the hydrogen embrittlement reduction and the subsequent suppression of morphological changes. References: [1] M.G. Fontana, Corrosion Engineering, Singapore: McGraw-Hill, 1987. [2] B.C.E.S. Kurelo et al., Applied Surface Science 349 (2015) 403-414. (author)

Facile CO cleavage by a multimetallic CsU2 nitride complex

International Nuclear Information System (INIS)

Falcone, Marta; Scopelliti, Rosario; Mazzanti, Marinella; Kefalidis, Christos E.; Maron, Laurent

2016-01-01

Uranium nitrides are important materials with potential for application as fuels for nuclear power generation, and as highly active catalysts. Molecular nitride compounds could provide important insight into the nature of the uranium-nitride bond, but currently little is known about their reactivity. In this study, we found that a complex containing a nitride bridging two uranium centers and a cesium cation readily cleaved the C≡O bond (one of the strongest bonds in nature) under ambient conditions. The product formed has a [CsU 2 (μ-CN)(μ-O)] core, thus indicating that the three cations cooperate to cleave CO. Moreover, the addition of MeOTf to the nitride complex led to an exceptional valence disproportionation of the CsU IV -N-U IV core to yield CsU III (OTf) and [MeN=U V ] fragments. The important role of multimetallic cooperativity in both reactions is illustrated by the computed reaction mechanisms.

Facile CO Cleavage by a Multimetallic CsU2 Nitride Complex.

Science.gov (United States)

Falcone, Marta; Kefalidis, Christos E; Scopelliti, Rosario; Maron, Laurent; Mazzanti, Marinella

2016-09-26

Uranium nitrides are important materials with potential for application as fuels for nuclear power generation, and as highly active catalysts. Molecular nitride compounds could provide important insight into the nature of the uranium-nitride bond, but currently little is known about their reactivity. In this study, we found that a complex containing a nitride bridging two uranium centers and a cesium cation readily cleaved the C≡O bond (one of the strongest bonds in nature) under ambient conditions. The product formed has a [CsU2 (μ-CN)(μ-O)] core, thus indicating that the three cations cooperate to cleave CO. Moreover, the addition of MeOTf to the nitride complex led to an exceptional valence disproportionation of the CsU(IV) -N-U(IV) core to yield CsU(III) (OTf) and [MeN=U(V) ] fragments. The important role of multimetallic cooperativity in both reactions is illustrated by the computed reaction mechanisms. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrotreatment activities of supported molybdenum nitrides and carbides

Energy Technology Data Exchange (ETDEWEB)

Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

1997-05-01

The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

Nitrogen reduction and functionalization by a multimetallic uranium nitride complex

Science.gov (United States)

Falcone, Marta; Chatelain, Lucile; Scopelliti, Rosario; Živković, Ivica; Mazzanti, Marinella

2017-07-01

Molecular nitrogen (N2) is cheap and widely available, but its unreactive nature is a challenge when attempting to functionalize it under mild conditions with other widely available substrates (such as carbon monoxide, CO) to produce value-added compounds. Biological N2 fixation can do this, but the industrial Haber-Bosch process for ammonia production operates under harsh conditions (450 degrees Celsius and 300 bar), even though both processes are thought to involve multimetallic catalytic sites. And although molecular complexes capable of binding and even reducing N2 under mild conditions are known, with co-operativity between metal centres considered crucial for the N2 reduction step, the multimetallic species involved are usually not well defined, and further transformation of N2-binding complexes to achieve N-H or N-C bond formation is rare. Haber noted, before an iron-based catalyst was adopted for the industrial Haber-Bosch process, that uranium and uranium nitride materials are very effective heterogeneous catalysts for ammonia production from N2. However, few examples of uranium complexes binding N2 are known, and soluble uranium complexes capable of transforming N2 into ammonia or organonitrogen compounds have not yet been identified. Here we report the four-electron reduction of N2 under ambient conditions by a fully characterized complex with two UIII ions and three K+ centres held together by a nitride group and a flexible metalloligand framework. The addition of H2 and/or protons, or CO to the resulting complex results in the complete cleavage of N2 with concomitant N2 functionalization through N-H or N-C bond-forming reactions. These observations establish that a molecular uranium complex can promote the stoichiometric transformation of N2 into NH3 or cyanate, and that a flexible, electron-rich, multimetallic, nitride-bridged core unit is a promising starting point for the design of molecular complexes capable of cleaving and functionalizing N2 under

Graphitic Carbon Nitride as a Catalyst Support in Fuel Cells and Electrolyzers

International Nuclear Information System (INIS)

Mansor, Noramalina; Miller, Thomas S.; Dedigama, Ishanka; Jorge, Ana Belen; Jia, Jingjing; Brázdová, Veronika; Mattevi, Cecilia; Gibbs, Chris; Hodgson, David; Shearing, Paul R.; Howard, Christopher A.; Corà, Furio; Shaffer, Milo; Brett, Daniel J.L.

2016-01-01

Highlights: • Graphitic carbon nitride (gCN) describes many materials with different structures. • gCNs can exhibit excellent mechanical, chemical and thermal resistance. • A major obstacle for pure gCN catalyst supports is limited electronic conductivity. • Composite/Hybrid gCN structures show excellent performance as catalyst supports. • gCNs have great potential for use in fuel calls and water electrolyzers. - Abstract: Electrochemical power sources, such as polymer electrolyte membrane fuel cells (PEMFCs), require the use of precious metal catalysts which are deposited as nanoparticles onto supports in order to minimize their mass loading and therefore cost. State-of-the-art/commercial supports are based on forms of carbon black. However, carbon supports present disadvantages including corrosion in the operating fuel cell environment and loss of catalyst activity. Here we review recent work examining the potential of different varieties of graphitic carbon nitride (gCN) as catalyst supports, highlighting their likely benefits, as well as the challenges associated with their implementation. The performance of gCN and hybrid gCN-carbon materials as PEMFC electrodes is discussed, as well as their potential for use in alkaline systems and water electrolyzers. We illustrate the discussion with examples taken from our own recent studies.

Critical fields of niobium nitride films of various granularity

International Nuclear Information System (INIS)

Antonova, E.A.; Sukhov, V.A.

1983-01-01

The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

Facile synthesis of nanorod-type graphitic carbon nitride/Fe2O3 composite with enhanced photocatalytic performance

International Nuclear Information System (INIS)

Wang, Jiangpeng; Li, Changqing; Cong, Jingkun; Liu, Ziwei; Zhang, Hanzhuo; Liang, Mei; Gao, Junkuo; Wang, Shunli; Yao, Juming

2016-01-01

Here we report a facile synthesis of nanorod-type graphitic carbon nitride/Fe 2 O 3 composite (Fe 2 O 3 -g-C 3 N 4 ) by using Fe-melamine supramolecular framework as precursor. The chemical and optical properties of the nanocomposites are well-characterized. The Fe 2 O 3 -g-C 3 N 4 nanocomposite demonstrated excellent photocatalytic activities under visible light due to the efficient utilization of sunlight and the construction of Z-scheme electron transfer pathway. The results indicated that it could be a promising approach for the preparation of efficient g-C 3 N 4 nanocomposites photocatalysts by using metal-melamine supramolecular framework as precursors. - Graphical abstract: Nanorod-type graphitic carbon nitride/Fe 2 O 3 composite (Fe 2 O 3 -g-C 3 N 4 ) was synthesized by using Fe-melamine supramolecular framework as precursor. The Fe 2 O 3 -g-C 3 N 4 nanocomposite demonstrated excellent photocatalytic activities under visible light. Display Omitted - Highlights: • Nanorod-type graphitic carbon nitride/Fe 2 O 3 composite (Fe 2 O 3 -g-C 3 N 4 ) was synthesized. • Fe 2 O 3 -g-C 3 N 4 showed strong optical absorption in the visible-light region. • The Fe 2 O 3 -g-C 3 N 4 nanocomposite demonstrated excellent photocatalytic activities.

X-ray diffraction of residual stresses in boron nitride coated on steel substrate

International Nuclear Information System (INIS)

Hamzah, E.; Ramdan, R.D.; Venkatesh, V.C.; Hamid, N.H.B.

2002-01-01

Cubic boron nitride (cBN) is a promising coating material for cutting tools especially for applications that have contact with ferrous metals. This is because of its extreme hardness, chemical stability at high temperature and inertness with ferrous metals. However applications of cBN as coating material has not been used extensively due to the poor adhesion between cBN and its substrate. High stress level in the film is considered to be the main factor for the delamination of cBN films after deposition. Thus the present research concentrates on residual stress analysis of cBN films by x-ray diffraction method. Fourier transform infra-red (FTIR) spectroscopy analysis was also performed on the samples to study the structure of the deposited films. Based on the present experimental results and previous literature study, a new theoretical model for cBN film growth was proposed. (Author)

77 FR 51825 - Ferrovanadium and Nitrided Vanadium From Russia

Science.gov (United States)

2012-08-27

... Nitrided Vanadium From Russia Determination On the basis of the record \\1\\ developed in the subject five... order on ferrovanadium and nitrided vanadium from Russia would not be likely to lead to continuation or recurrence of material injury to an industry in the United States within a reasonably foreseeable time. \\1...

Low temperature gaseous nitriding of Ni based superalloys

DEFF Research Database (Denmark)

Eliasen, K. M.; Christiansen, Thomas Lundin; Somers, Marcel A. J.

2010-01-01

In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr......In the present work the nitriding response of selected Ni based superalloys at low temperatures is addressed. The alloys investigated are nimonic series nos. 80, 90, 95 and 100 and nichrome (Ni/Cr...

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Rolling Contact Fatigue Failure Mechanisms of Plasma-Nitrided Ductile Cast Iron

Science.gov (United States)

Wollmann, D.; Soares, G. P. P. P.; Grabarski, M. I.; Weigert, N. B.; Escobar, J. A.; Pintaude, G.; Neves, J. C. K.

2017-05-01

Rolling contact fatigue (RCF) of a nitrided ductile cast iron was investigated. Flat washers machined from a pearlitic ductile cast iron bar were quenched and tempered to maximum hardness, ground, polished and divided into four groups: (1) specimens tested as quenched and tempered; (2) specimens plasma-nitrided for 8 h at 400 °C; (3) specimens plasma-nitrided and submitted to a diffusion process for 16 h at 400 °C; and (4) specimens submitted to a second tempering for 24 h at 400 °C. Hardness profiles, phase analyses and residual stress measurements by x-ray diffraction, surface roughness and scanning electron microscopy were applied to characterize the surfaces at each step of this work. Ball-on-flat washer tests were conducted with a maximum contact pressure of 3.6 GPa, under flood lubrication with a SAE 90 API GL-5 oil at 50 °C. Test ending criterion was the occurrence of a spalling. Weibull analysis was used to characterize RCF's lifetime data. Plasma-nitrided specimens exhibited a shorter RCF lifetime than those just quenched and tempered. The effects of nitriding on the mechanical properties and microstructure of the ductile cast iron are discussed in order to explain the shorter endurance of nitrided samples.

Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

Science.gov (United States)

Chuang, Chen

Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

Technical assistance for development of thermally conductive nitride filler for epoxy molding compounds

Energy Technology Data Exchange (ETDEWEB)

Ryu, Ho Jin; Song, Kee Chan; Jung, In Ha

2005-07-15

Technical assistance was carried out to develop nitride filler for thermally conductive epoxy molding compounds. Carbothermal reduction method was used to fabricate silicon nitride powder from mixtures of silica and graphite powders. Microstructure and crystal structure were observed by using scanning electron microscopy and x-ray diffraction technique. Thermal properties of epoxy molding compounds containing silicon nitride were measured by using laser flash method. Fabrication process of silicon nitride nanowire was developed and was applied to a patent.

Plasma-nitriding assisted micro-texturing into stainless steel molds

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Micro-texturing has grown up to be one of the most promising procedures. This related application required for large-area, fine micro-texturing onto the stainless steel mold materials. A new method other than laser-machining, micro-milling or micro-EDM was awaited for further advancement of this micro-texturing. In the present paper, a plasma nitriding assisted micro-texturing was developed to make various kinds of micro-patterns onto the martensitic stainless steels. First, original patterns were printed onto the surface of substrate by using the ink-jet printer. Then, the masked substrate was subjected to high density plasma nitriding; the un-masked surfaces were nitrided to have higher hardness. This nitrided substrate was further treated by sand-blasting to selectively dig the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel substrate was fabricated as a mold to duplicate these micro-patterns onto the work materials. The spatial resolution and depth profile controllability of this plasma nitriding assisted micro-texturing was investigated for variety of initial micro-patterns. The original size and dimension of initial micro-patterns were precisely compared with the three dimensional geometry of micro-textures after blasting treatment. The plastic cover case for smart cellular phones was employed to demonstrate how useful this processing is in practice.

15 N utilization in nitride nuclear fuels for advanced nuclear power reactors and accelerator - driven systems

International Nuclear Information System (INIS)

Axente, D.

2005-01-01

15 N utilization for nitride nuclear fuels production for nuclear power reactors and accelerator - driven systems is presented. Nitride nuclear fuel is the obvious choice for advanced nuclear reactors and ADS because of its favorable properties: a high melting point, excellent thermal conductivity, high fissile density, lower fission gas release and good radiation tolerance. The application of nitride fuels in nuclear reactors and ADS requires use of 15 N enriched nitrogen to suppress 14 C production due to (n,p) reaction on 14 N. Accelerator - driven system is a recent development merging of accelerator and fission reactor technologies to generate electricity and transmute long - lived radioactive wastes as minor actinides: Np, Am, Cm. A high-energy proton beam hitting a heavy metal target produces neutrons by spallation. The neutrons cause fission in the fuel, but unlike in conventional reactors, the fuel is sub-critical and fission ceases when the accelerator is turned off. Nitride fuel is a promising candidate for transmutation in ADS of minor actinides, which are converted into nitrides with 15 N for that purpose. Tacking into account that the world wide market is about 20 to 40 Kg 15 N annually, the supply of that isotope for nitride fuel production for nuclear power reactors and ADS would therefore demand an increase in production capacity by a factor of 1000. For an industrial plant producing 100 t/y 15 N, using present technology of isotopic exchange in NITROX system, the first separation stage of the cascade would be fed with 10M HNO 3 solution of 600 mc/h flow - rate. If conversion of HNO 3 into NO, NO 2 , at the enriching end of the columns, would be done with gaseous SO 2 , for a production plant of 100 t/y 15 N a consumption of 4 million t SO 2 /y and a production of 70 % H 2 SO 4 waste solution of 4.5 million mc/y are estimated. The reconversion of H 2 SO 4 into SO 2 in order to recycle of SO 2 is a problem to be solved to compensate the cost of SO 2

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Effects of Ion-Nitriding on the Pitting Behavior of Austenitic Stainless Steels Containing Mo