Fatigue improvement in low temperature plasma nitrided Ti–6Al–4V alloy

International Nuclear Information System (INIS)

Farokhzadeh, K.; Edrisy, A.

2015-01-01

In this study a low temperature (600 °C) treatment was utilized to improve the fatigue performance of plasma nitrided Ti–6Al–4V alloy by optimization of microstructure. In order to study the fatigue properties, rotation bending tests were conducted, the S–N curves were constructed, and the results were compared with those obtained by an elevated temperature treatment (900 °C) as well as conventional gas/plasma nitriding treatments reported in literature. The plasma nitrided alloy at 600 °C showed an endurance limit of 552 MPa which was higher than those achieved by conventional nitriding treatments performed at 750–1100 °C. In contrast, plasma nitriding at 900 °C resulted in the reduction of fatigue life by at least two orders of magnitude compared to the 600 °C treatment, accompanied by a 13% reduction of tensile strength and a 78% reduction of ductility. The deterioration of mechanical properties after the elevated temperature treatment was attributed to the formation of a thick compound layer (∼6 µm) on the surface followed by an α-Case (∼20 µm) and phase transformation in the bulk microstructure from fully equiaxed to bimodal with coarse grains (∼5 times higher average grain size value). The microstructure developed at 600 °C consisted of a thin compound layer (<2 µm) and a deep nitrogen diffusion zone (∼45 µm) while the bulk microstructure was maintained with only 40% grain growth. The micromechanisms of fatigue failures were identified by examination of the fracture surfaces under a scanning electron microscope (SEM). It was found that fatigue failure in the plasma nitrided alloy initiated from the surface in the low cycle region (N≤10 5 cycles) and propagated in a ductile manner leading to the final rupture. No failures were observed in the high cycle region (N>10 5 cycles) and the nitrided alloy endured cyclic loading until the tests were stopped at 10 7 cycles. The thin morphology of the compound layer in this study restricted

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

Science.gov (United States)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2016-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

High temperature solution-nitriding and low-temperature nitriding of AISI 316: Effect on pitting potential and crevice corrosion performance

DEFF Research Database (Denmark)

Bottoli, Federico; Jellesen, Morten Stendahl; Christiansen, Thomas Lundin

2018-01-01

in a 0.1M NaCl solution and crevice corrosion immersion tests in 3wt% FeCl3 solution were studied before and after the bulk and surface treatments.Nitrogen addition in the bulk proved to have a beneficial effect on the pitting resistance of the alloy. The formation of a zone of expanded austenite...... at the material surface through low-temperature nitriding resulted in a considerable improvement of the pitting potential and the crevice corrosion performance of the steels....

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Science.gov (United States)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Structural materialization of stainless steel molds and dies by the low temperature high density plasma nitriding

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a mold substrate material for injection molding and as a die for mold-stamping and direct stamping processes. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical elements at present. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness of 1400 Hv within its thickness of 40 μm without any formation of nitrides after 14.4 ks plasma nitriding at 693 K. This nitrogen solid-solution treated stainless steel had thermal resistivity even at the mold-stamping conditions up to 900 K.

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

International Nuclear Information System (INIS)

Mashovets, N.S.; Pastukh, I.M.; Voloshko, S.M.

2017-01-01

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm 2 . The above material shows the promise of the technology of low-temperature

Aspects of the practical application of titanium alloys after low temperature nitriding glow discharge in hydrogen- free -gas media

Energy Technology Data Exchange (ETDEWEB)

Mashovets, N.S., E-mail: mashovets@rambler.ru [Khmelnickiy National University (Ukraine); Pastukh, I.M., E-mail: pastim@mail.ru [Khmelnickiy National University (Ukraine); Voloshko, S.M. [Khmelnickiy National University (Ukraine); National Technical University of Ukraine “Kyiv Polytechnic Institute” (Ukraine)

2017-01-15

Highlights: • Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. • Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). • The above material shows the promise of the technology of low-temperature hydrogen-nitriding by glow discharge. This greatly expands the range of practical applications of titanium alloys. - Abstract: X-ray diffraction analysis, X-ray photoelectron spectroscopy, and Electron Auger-spectroscopy investigation of phase transformation on the surface of the VT8 titanium alloy after a low temperature hydrogen-free nitriding in a glow discharge. Operational characteristics of titanium alloys defined physical-mechanical characteristics of the surface and their phase composition, which depend on the process parameters of nitriding. Surface modification of titanium alloys were carried out by low-temperature nitriding in a glow discharge in hydrogen-free environment. The main advantage of this method lies in the absence of hydrogen embrittlement and complete environmental safety process. Application of the glow discharge can not only speed up the process by the order of the diffusion surface saturation with nitrogen, but also significantly alters the kinetics of the process and quality of the nitrided layer, in particular its physio-mechanical properties and phase composition. For research purposes, the standards from an α + β alloy Ti-Al6-Cr2-Mo2,5 (VT8) were used. Research into the phase composition was performed by X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Stratified analysis by AES was conducted by etching the surface of the samples’ argon ion beam with diameters of 1.5 mm with an energy of 3000 eV and a current density of 400 mA/cm{sup 2}. The above material shows the promise of the technology of low-temperature

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Energy Technology Data Exchange (ETDEWEB)

Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

Modelling the evolution of composition-and stress-depth profiles in austenitic stainless steels during low-temperature nitriding

DEFF Research Database (Denmark)

Jespersen, Freja Nygaard; Hattel, Jesper Henri; Somers, Marcel A. J.

2016-01-01

. In the present paper solid mechanics was combined with thermodynamics and diffusion kinetics to simulate the evolution of composition-depth and stress-depth profiles resulting from nitriding. The model takes into account a composition-dependent diffusion coefficient of nitrogen in expanded austenite, short range......Nitriding of stainless steel causes a surface zone of expanded austenite, which improves the wear resistance of the stainless steel while preserving the stainless behaviour. During nitriding huge residual stresses are introduced in the treated zone, arising from the volume expansion...... that accompanies the dissolution of high nitrogen contents in expanded austenite. An intriguing phenomenon during low-temperature nitriding is that the residual stresses evoked by dissolution of nitrogen in the solid state, affect the thermodynamics and the diffusion kinetics of nitrogen dissolution...

Effect of the low temperature ion nitriding on the wear and corrosion resistance of 316L austenitic stainless steel biomaterials

International Nuclear Information System (INIS)

Sudjatmoko; Bambang Siswanto; Wirjoadi; Lely Susita RM

2012-01-01

In the present study has been completed done the ion nitriding process and characterization of the 316L SS samples. The ion nitriding process has been conducted on the samples for nitriding temperature variation of 350, 400, 450, 500, and 550 °C, the optimum nitrogen gas pressure of 1.8 mbar and optimum nitriding time of 3 hours. The micro-structure, elemental composition and the phase structure of the nitride layer formed on the surface of samples were observed using the techniques of SEM-EDAX and XRD, respectively. It is known that a thin layer of iron nitrides has been formed on the surface of the samples. Iron nitride layer has a phase structure including ε-Fe_2_-_3N, γ'-Fe_4N, CrN, Cr_2N and expanded austenite γN. The characterization results of the wear resistance of the 316L SS samples showed an increasing of about 2.6 times the wear resistance of standard samples after nitriding temperature of 350 °C. From the corrosion test by using the Hanks solution was obtained 29.87 mpy corrosion rate or the increasing of corrosion resistance of about 137%. Thus it can be seen that by using ion nitriding technique the iron nitride layer has been formed on the surface of the 316L SS samples, and they have an excellent properties of wear resistance and corrosion resistance, which were caused especially due to the formation of an expanded austenite γN. Properties of the high hardness and has the good corrosion resistance, especially due to the formation of iron nitride and expanded austenite phases γN at low temperature nitriding process. (author)

The Influence Of Nitridation Temperature And Time On The Surface Hardness Of AISI 1010 Low Carbon Steels Nitrided By Means Of Plasma Glow Discharge Technique

International Nuclear Information System (INIS)

Sujitno, Tjipto; Mujiman, Supardjono

1996-01-01

The results of the influence of nitridation temperature and time on the surface hardness of AISI 1010 low carbon steels nitrided by means of plasma glow discharge technique are presented in this paper. The results are the changing of surface hardiness, the changing of surface microstructure and the penetration profile depth. The experiment has been carried out at the temperature 400 o C, 450 o C, 500 o C, 550 o C, 570 o C and 600 o C, whereas the time is 5 minutes, 15 minutes, 40 minutes, 90 minutes and 180 minutes. All the experiments have been carried out at the optimum plasma density condition. The optimum plasma density condition is achieved at the pressure of p = 0.2 torr, when thr gas flow of nitrogen is 0.6 liter/minute and the distance of electrode plate is 4.5 cm. It was found that the optimum hardness of the surface was achieved at the temperature of 570 o C and the time of nitridation was 90 minutes, i.e. 190 KHN

Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

International Nuclear Information System (INIS)

Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

2014-01-01

Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

Erosion–corrosion and corrosion properties of DLC coated low temperature Erosion–corrosion and corrosion properties of DLC coated low temperature

DEFF Research Database (Denmark)

Jellesen, Morten Stendahl; Christiansen, Thomas; Hilbert, Lisbeth Rischel

2009-01-01

of AISI 316 as substrate for DLC coatings are investigated. Corrosion and erosion–corrosion measurements were carried out on low temperature nitrided stainless steel AISI 316 and on low temperature nitrided stainless steel AISI 316 with a top layer of DLC. The combination of DLC and low temperature...... nitriding dramatically reduces the amount of erosion–corrosion of stainless steel under impingement of particles in a corrosive medium....

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Low Working-Temperature Acetone Vapor Sensor Based on Zinc Nitride and Oxide Hybrid Composites.

Science.gov (United States)

Qu, Fengdong; Yuan, Yao; Guarecuco, Rohiverth; Yang, Minghui

2016-06-01

Transition-metal nitride and oxide composites are a significant class of emerging materials that have attracted great interest for their potential in combining the advantages of nitrides and oxides. Here, a novel class of gas sensing materials based on hybrid Zn3 N2 and ZnO composites is presented. The Zn3 N2 /ZnO (ZnNO) composites-based sensor exhibits selectivity and high sensitivity toward acetone vapor, and the sensitivity is dependent on the nitrogen content of the composites. The ZnNO-11.7 described herein possesses a low working temperature of 200 °C. The detection limit (0.07 ppm) is below the diabetes diagnosis threshold (1.8 ppm). In addition, the sensor shows high reproducibility and long-term stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

International Nuclear Information System (INIS)

Park, Young-Bae; Rhee, Shi-Woo

2001-01-01

Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Room-temperature ballistic transport in III-nitride heterostructures.

Science.gov (United States)

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Effect of temperature and pressure on wear properties of ion nitrided AISI 316 and 409 stainless steels

International Nuclear Information System (INIS)

Fernandes, Frederico Augusto Pires; Heck, Stenio Cristaldo; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Nascente, Pedro Augusto de Paula

2010-01-01

Stainless steels are widely used in chemical and other industries due to their corrosion resistance property. However, because of their low hardness and wear properties, their applications are limited. Many attempts have been made to increase the surface hardness of these materials by using plasma techniques. Plasma nitriding is distinguished by its effectiveness, and for presenting a relatively low cost and being a clean process, producing hard surface layers on stainless steels. Aiming to verify the influence of the temperature and pressure on the modified resultant layers, samples of AISI 316 and 409 stainless steels were plasma nitrided in two different temperatures (450 and 500°C) and pressures of 400, 500, and 600Pa for 5h. After the nitriding treatment, the layers were analyzed by means of optical microscopy and wear tests. Wear tests were conducted in a fixed-ball micro-wear machine without lubrication. After the plasma nitriding treatment on AISI 316 and 409 samples, homogeneous and continuous layers were produced and their thicknesses increased as the temperature increased, and as the pressure decreased. The nitriding treatment on the AISI 316 steel sample resulted on the formation of expanded austenite layers at 450°C, and chromium nitrides (CrN and Cr_2N) phases at 500°C. The nitriding treatment on AISI 409 sample yielded the formation of similar layers for both treatment temperatures; these layers constituted mainly by chromium (Cr_2N) and iron (Fe_2N, Fe3_N, and Fe_4N) nitrides. After the nitriding treatment, the AISI 316 steel sample presented higher wear resistance for lower temperature and pressure values. The increase on layer fragility, for higher temperature and pressure values can be responsible for this inverse tendency. The wear resistance of the nitrided AISI 409 sample followed a logic tendency: the harder the layer the better the performance, i.e. the performance was improved with the increase in both the temperature and pressure

Low temperature aluminum nitride thin films for sensory applications

Energy Technology Data Exchange (ETDEWEB)

Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

Energy Technology Data Exchange (ETDEWEB)

Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Zhu, Tongtong; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Quan, Qimin [Rowland Institute at Harvard University, Cambridge, Massachusetts 02142 (United States)

2015-06-08

We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

International Nuclear Information System (INIS)

Niu, Nan; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L.; Zhu, Tongtong; Oliver, Rachel A.; Quan, Qimin

2015-01-01

We report exceptionally low thresholds (9.1 μJ/cm 2 ) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance

Evaluation of the Effect of Different Plasma-Nitriding Parameters on the Properties of Low-Alloy Steel

Science.gov (United States)

Zdravecká, Eva; Slota, Ján; Solfronk, Pavel; Kolnerová, Michaela

2017-07-01

This work is concerned with the surface treatment (ion nitriding) of different plasma-nitriding parameters on the characteristics of DIN 1.8519 low-alloy steel. The samples were nitrided from 500 to 570 °C for 5-40 h using a constant 25% N2-75% H2 gaseous mixture. Lower temperature (500-520 °C) favors the formation of compound layers of γ' and ɛ iron nitrides in the surface layers, whereas a monophase γ'-Fe4 N layer can be obtained at a higher temperature. The hardness of this layer can be obtained when nitriding is performed at a higher temperature, and the hardness decreases when the temperature increases to 570 °C. These results indicate that pulsed plasma nitriding is highly efficient at 550 °C and can form thick and hard nitrided layers with satisfactory mechanical properties. The results show the optimized nitriding process at 540 °C for 20 h. This process can be an interesting means of enhancing the surface hardness of tool steels to forge dies compared to stamped steels with zinc coating with a reduced coefficient of friction and improving the anti-sticking properties of the tool surface.

Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

2008-12-15

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

Some Temperature Effects on AISI-304 Nitriding in an Inductively Coupled RF Plasma

International Nuclear Information System (INIS)

Valencia-Alvarado, R.; Barocio, S. R.; Mercado-Cabrera, A.; Pena-Eguiluz, R.; Munoz-Castro, A. E.; Piedad-Beneitez, A. de la; Rosa-Vazquez, J. de la; Lopez-Callejas, R.; Godoy-Cabrera, O. G.

2006-01-01

Some recent results obtained from nitriding AISI 304 stainless steel samples, 1.2 cm in diameter and 0.5 cm thick are reported here in the case of an 85% hydrogen and 15% nitrogen mixture work gas. The process was carried out from 300 to 400 W for (13.56 MHz) inductively coupled plasma within a 60 cm long pyrex glass tube 3.5 cm in diameter where the samples were biased up to -300 V with respect to earth. The resulting hardness appears to be a function of the substrate temperature which varied from 200 deg. C at a 0 V bias to 550 deg. C at -300 V. The plasma density at 400 W reached 3x1010 cm-3 with a 4 eV electron temperature. Prior to nitriding, all the samples were polished with 0.05 μm diamond paste, leading to a 30 nm average roughness (Ra). After nitriding at -300 V, the Ra rose until ∼400 nm while hardness values of 1500 HV under 300 g loads were measured. X ray diffraction indicates that the extended phase amplitude (γN), Fe and Cr nitride depends on the substrate temperature

Influence of Microstructure and Process Conditions on Simultaneous Low-Temperature Surface Hardening and Bulk Precipitation Hardening of Nanoflex®

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas L.

2015-01-01

Precipitation hardening martensitic stainless steel Nanoflex was low-temperature nitrided or nitrocarburized. In these treatments, simultaneous hardening of the bulk, by precipitation hardening, and the surface by dissolving nitrogen/carbon can be obtained because the treatment temperatures...... and times for these essentially different hardening mechanisms are compatible. The effect of the processing history of the steel on the nitrided/nitrocarburized case was investigated by varying the amounts of austenite and martensite through variation of the degree of plastic deformation by tensile strain...... consisting of martensite results in the deepest nitrided case, while a shallow case develops on a microstructure consisting of austenite. For an initial microstructure consisting of both martensite and austenite a non-uniform case depth is achieved. Simultaneous bulk and surface hardening is only possible...

Nitriding and Nitrocarburizing; Current Status and Future Challenges

DEFF Research Database (Denmark)

Somers, Marcel A. J.

, aspects of low temperature surface hardening of stainless steels in a gaseous environment will be addressed. Here, the developed case consists of expanded austenite and/or expanded martensite, which essentially is a super saturated solid solution of nitrogen/carbon in austenite/martensite. The current......This contribution addresses the current understanding of gaseous nitriding and nitrocarburizing. Aspects of thermodynamics, kinetics and microstructure development in iron and heat treatable steel will be explained. In these materials the nitrided/ nitrocarburized case can be subdivided...

Modeling the Gas Nitriding Process of Low Alloy Steels

Science.gov (United States)

Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

2013-07-01

The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Ibrahim Nor Nurulhuda Md.

2014-07-01

Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

Optimization of time–temperature schedule for nitridation of silicon ...

Indian Academy of Sciences (India)

pact was optimized by kinetic study of the reaction, 3Si + 2N2 = Si3N4 at four different temperatures (1250°C,. 1300°C, 1350°C and 1400°C). ... Reaction sintered silicon nitride; nitridation; reaction kinetics. 1. Introduction. Formation of ..... cation of silica layer resulted in active oxidation of silicon at high temperature to ...

In situ characterization of the nitridation of dysprosium during mechanochemical processing

Energy Technology Data Exchange (ETDEWEB)

Jaques, Brian J.; Osterberg, Daniel D.; Alanko, Gordon A.; Tamrakar, Sumit; Smith, Cole R.; Hurley, Michael F.; Butt, Darryl P., E-mail: DarrylButt@BoiseState.edu

2015-01-15

Highlights: • A nitridation reaction in a high energy planetary ball mill was monitored in situ. • Dysprosium mononitride was synthesized from Dy at low temperatures in short times. • Ideal gas law and in situ temperature and pressure used to assess reaction extent. • It is proposed that reaction rate is proportional to the creation of new surface. - Abstract: Processing of advanced nitride ceramics traditionally requires long durations at high temperatures and, in some cases, in hazardous atmospheres. In this study, dysprosium mononitride (DyN) was rapidly formed from elemental dysprosium in a closed system at ambient temperatures. An experimental procedure was developed to quantify the progress of the nitridation reaction during mechanochemical processing in a high energy planetary ball mill (HEBM) as a function of milling time and intensity using in situ temperature and pressure measurements, SEM, XRD, and particle size analysis. No intermediate phases were formed. It was found that the creation of fresh dysprosium surfaces dictates the rate of the nitridation reaction, which is a function of milling intensity and the number of milling media. These results show clearly that high purity nitrides can be synthesized with short processing times at low temperatures in a closed system requiring a relatively small processing footprint.

Effect of Primary Recrystallized Microstructure and Nitriding on Secondary Recrystallization in Grain Oriented Silicon Steel by Low Temperature Slab Reheating

Directory of Open Access Journals (Sweden)

LIU Gong-tao

2018-01-01

Full Text Available Different primary recrystallized grain sizes were obtained by controlling decarburization process in grain oriented silicon steel produced by low temperature slab reheating technique. The effect of primary grain size on secondary recrystallization and magnetic properties was studied. The appropriate nitrogen content after nitriding was explored in case of very large primary grain size, and the effect of {411}〈148〉 primary recrystallized texture on the abnormal growth behavior was discussed. The results show that an increase in average primary grain size from 10μm to 15μm leads to an increase of secondary recrystallization temperature and a sharper Goss texture with higher magnetic permeability, in the condition of a very large average primary grain size of 28μm, the suitable amount of nitrogen increases to about 6×10-4. The {411}〈148〉 oriented grains in primary recrystallized microstructure can easily grow into larger sizes due to their size advantage, and thus hinder the abnormal growth of secondary grains, moreover, the hindering effect is more pronounced in the abnormal growth of Brass-oriented grains due to their misorientation with low migration rate other than Goss grains.

Plasma nitriding process by direct current glow discharge at low temperature increasing the thermal diffusivity of AISI 304 stainless steel

Energy Technology Data Exchange (ETDEWEB)

Prandel, L. V.; Somer, A.; Assmann, A.; Camelotti, F.; Costa, G.; Bonardi, C.; Jurelo, A. R.; Rodrigues, J. B.; Cruz, G. K. [Universidade Estadual de Ponta Grossa, Grupo de Espectroscopia Optica e Fotoacustica de Materiais, Departamento de Fisica, Av. Carlos Cavalcanti, 4748, CEP 84030-900, Ponta Grossa, PR (Brazil)

2013-02-14

This work reports for the first time on the use of the open photoacoustic cell technique operating at very low frequencies and at room temperature to experimentally determine the thermal diffusivity parameter of commercial AISI304 stainless steel and AISI304 stainless steel nitrided samples. Complementary measurements of X-ray diffraction and scanning electron microscopy were also performed. The results show that in standard AISI 304 stainless steel samples the thermal diffusivity is (4.0 {+-} 0.3) Multiplication-Sign 10{sup -6} m{sup 2}/s. After the nitriding process, the thermal diffusivity increases to the value (7.1 {+-} 0.5) Multiplication-Sign 10{sup -6} m{sup 2}/s. The results are being associated to the diffusion process of nitrogen into the surface of the sample. Carrying out subsequent thermal treatment at 500 Degree-Sign C, the thermal diffusivity increases up to (12.0 {+-} 2) Multiplication-Sign 10{sup -6} m{sup 2}/s. Now the observed growing in the thermal diffusivity must be related to the change in the phases contained in the nitrided layer.

First results on nitriding aluminium alloys in a low-pressure RF plasma

International Nuclear Information System (INIS)

Fewell, M.P.; Priest, J.M.; Collins, G.A.; Short, K.T.

2000-01-01

Full text: Aluminium alloys are now well established as materials of choice for many commercial applications, especially where strength-to-weight ratio is a critical parameter. However, their more widespread use is inhibited by their low surface hardness. For steels, similar problems can be overcome by nitriding. The nitrogen-rich surface layer has high hardness and load-bearing capacity, and is very well bonded to the substrate. The development of a similar surface-treatment process for aluminium alloys is clearly a desirable goal. It is therefore not surprising that many research groups worldwide have attempted to nitride aluminium. Much of this work studied pure aluminium, a material of no interest for structural applications. Previous investigations into nitriding aluminium alloys' had indifferent results. However, they have served to identify the key issues, which are the importance of a pre-cleaning steps to remove the surface oxide, of impurity control during the nitriding and the desirability of using as low a process temperature as possible. In all of these areas, our process using a low-pressure RF plasma is likely to be competitive. In view of this, we have undertaken a comparative study of a range of commercially available aluminium alloys. All treatments were carried out in the hot-wall nitriding reactor at ANSTO. The samples consist of disks 25mm in diameter and ∼3mm thick which were polished and ultrasonically cleaned in alcohol prior to treatment. The samples were stored in air at all times except when in the nitriding reactor. In a series of treatments, the treatment time was varied in the range 1-16 h and the temperature in the range 350-500 deg C. All treatments were preceeded by a plasma cleaning step in a H 2 /50%Ar mixture for a duration of 1.5-2.0 h while the reactor reached processing temperature. The treatments all used pure N 2 at a pressure of 0.4Pa and a nitrogen flow rate of 12μmol s -1 , with 245W of rf power at 13.56MHz applied to

Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

Energy Technology Data Exchange (ETDEWEB)

Baranowski, M.; Misiewicz, J. [Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland)

2015-10-21

We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

Energy Technology Data Exchange (ETDEWEB)

Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E

2002-11-01

Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H{sub 2} into the reaction.

Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

International Nuclear Information System (INIS)

Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E.

2002-01-01

Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H 2 into the reaction

Structure of boron nitride after the high-temperature shock compression

International Nuclear Information System (INIS)

Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

1979-01-01

Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

International Nuclear Information System (INIS)

Karim, M.Z.; Cameron, D.C.; Murphy, M.J.; Hashmi, M.S.J.

1991-01-01

Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B 2 H 6 ) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH 3 -NH 3 ) which is a crystalline solid at room temperature with a high vapour pressure. The BH 3 -NH 3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm -1 (hexagonal) and 1070 cm -1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

Low temperature gaseous surface hardening of stainless steel

DEFF Research Database (Denmark)

Christiansen, Thomas; Somers, Marcel A. J.

2010-01-01

The present contribution gives an overview of some of the technological aspects of low temperature thermochemical treatment of stainless steel. Examples of low temperature gaseous nitriding, carburising and nitrocarburising of stainless steel are presented and discussed. In particular......, the morphology, microstructure and characteristics of so-called expanite “layers” on stainless steel are addressed....

Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

2013-01-15

Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

Science.gov (United States)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

CVD boron nitride infiltration of fibrous structures: properties of low temprature deposits

International Nuclear Information System (INIS)

Gebhardt, J.J.

1973-01-01

The pyrolytic infiltration of boron nitride and silica fibrous structures with boron nitride was investigated using the thermal decomposition of B-trichloroborazole (TCB) to provide the matrix surrounding felted and 4-directional braided constructions. The deposition precursor was generated on a continuous basis by the reaction between boron trichloride and ammonium chloride in a fixed bed reactor under conditions of total conversion of the trichloride: 3BCl 3 + 3NH 4 Cl = B 3 N 3 H 3 Cl 3 + 9HCl. Deposition rates in boron nitride felt specimens varied between 8 and 28 μm/h, depending on the distance from the exterior surface at the minimum deposition temperature used (1100 0 C ). Infiltration of 4-directional silica braids was poorer because of clogging of the fiber bundle surfaces and access paths to voids in the weave. Deposits prepared at 1100 0 C and above were stable to moisture and consisted of glassy transparent materials which had no discernible x-ray diffraction pattern. Heat treatment of low temperature deposits in nitrogen at 1800 0 C caused significant growth of the crystallites and the emergence of x-ray patterns characteristic of hexagonal boron nitride. Heat treatment in vacuum caused changes in the infrared spectrum which could be correlated with mass analyses of the gases evolved. Loss of hydrogen with amines predominated to about 1500 0 C above which point the loss of nitrogen became significant. (14 figures) (U.S.)

Comparison of ferritic and austenitic plasma nitriding and nitrocarburizing behavior of AISI 4140 low alloy steel

International Nuclear Information System (INIS)

Fattah, M.; Mahboubi, F.

2010-01-01

This paper compares the ferritic and austenitic plasma nitriding and nitrocarburizing behavior of AISI 4140 low alloy steel carried out to improve the surface corrosion resistance. The gas composition for plasma nitriding was 85% N 2 -15% H 2 and that for plasma nitrocarburizing was 85% N 2 -12% H 2 -3% CO 2 . Both treatments were performed for 5 h, for different process temperatures of 570 and 620 o C for ferritic and austenitic plasma treatment, respectively. Optical microscopy, X-ray diffraction and potentiodynamic polarization technique in 3.5% NaCl solution, were used to study the treated surfaces. The results of X-ray analysis revealed that with increasing the treatment temperature from 570 to 620 o C for both treatments, the amount of ε phase decreased and γ' phase increased. Nitrocarburizing treatment resulted in formation of a more amount of ε phase with respect to nitriding treatment. However, the highest amount of ε phase was observed in the ferritic nitrocarburized sample at 570 o C. The sample nitrided at 620 o C exhibited the thickest layer. The potentiodynamic polarization results revealed that after plasma nitriding and nitrocarburizing at 570 o C, corrosion potential increased with respect to the untreated sample due to the noble nitride and carbonitride phases formed on the surface. After increasing the treatment temperature from 570 to 620 o C, corrosion potential decreased due to the less ε phase development in the compound layer and more porous compound layer formed at 620 o C with respect to the treated samples at 570 o C.

Effect of microstructure on the high temperature strength of nitride

Indian Academy of Sciences (India)

Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

Leachability of nitrided ilmenite in hydrochloric acid

OpenAIRE

Swanepoel, J.J.; van Vuuren, D.S.; Heydenrych, M.

2011-01-01

Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200°C) chlorination reaction will not react with chlorine. It is therefore necessary to remove as much iron as possible from the nitrided ilmenite. Hydrochloric acid leaching is a possible process route to remove metallic iron from nitrided ilmenite without excessive dissolution o...

Corrosion of silicon nitride in high temperature alkaline solutions

Energy Technology Data Exchange (ETDEWEB)

Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

2016-08-01

The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

Solvothermal synthesis: a new route for preparing nitrides

CERN Document Server

Demazeau, G; Denis, A; Largeteau, A

2002-01-01

Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

Leachability of nitrided ilmenite in hydrochloric acid

CSIR Research Space (South Africa)

Swanepoel, JJ

2010-10-01

Full Text Available Titanium nitride in upgraded nitrided ilmenite (bulk of iron removed) can selectively be chlorinated to produce titanium tetrachloride. Except for iron, most other components present during this low temperature (ca. 200 °C) chlorination reaction...

Plasma nitriding of CA-6NM steel: effect of H2 + N2 gas mixtures in nitride layer formation for low N2 contents at 500 ºC

Directory of Open Access Journals (Sweden)

Angela Nardelli Allenstein

2010-12-01

Full Text Available This work aims to characterize the phases, thickness, hardness and hardness profiles of the nitride layers formed on the CA-6NM martensitic stainless steel which was plasma nitrided in gas mixtures containing different nitrogen amounts. Nitriding was performed at 500 ºC temperature, and 532 Pa (4 Torr pressure, for gas mixtures of 5% N2 + 95% H2, 10% N2 + 90% H2, and 20% N2 + 80% H2, and 2 hours nitriding time. A 6 hours nitriding time condition for gas mixture of 5% N2 + 95% H2 was also studied. Nitrided samples results were compared with non-nitrided condition. Thickness and microstructure of the nitrided layers were characterized by optical microscopy (OM, using Villela and Nital etchants, and the phases were identified by X-ray diffraction. Hardness profiles and hardness measured on surface steel were determined using Vickers hardness and nanoindentation tester, respectively. It was verified that nitrided layer produced in CA-6NM martensitc stainless steel is constituted of compound layer, being that formation of the diffusion zone was not observed for the studied conditions. The higher the nitrogen amounts in gas mixture the higher is the thickness of the nitrided layer and the probability to form different nitride phases, in the case γ'-Fe4N, ε-Fe2-3N and CrN phases. Intrinsic hardness of the nitrided layers produced in the CA-6NM stainless steel is about 12-14 GPa (~1200-1400 HV.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Energy Technology Data Exchange (ETDEWEB)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

The Nitrocarburising Response of Low Temperature Bainite Steel

Directory of Open Access Journals (Sweden)

Daniel Fabijanic

2017-06-01

Full Text Available The nitrocarburising response of low transformation temperature ultrafine and nanoscale bainitic steel was investigated and compared with martensite and pearlite from the same steel composition. It was found that the retained austenite content of the bainitic steel dictated the core hardness after nitrocarburising. The refined bainitic structure showed improvements in the nitriding depth and hardness of the nitrocarburised layer, compared to coarser grained martensitic and pearlitic structures, possibly due to the fine structure and the distribution of nitride forming elements.

Influence of low-temperature nitriding on the strain-induced martensite and laser-quenched austenite in a magnetic encoder made from 304L stainless steel

Science.gov (United States)

Leskovšek, Vojteh; Godec, Matjaž; Kogej, Peter

2016-01-01

We have investigated the possibility of producing a magnetic encoder by an innovative process. Instead of turning grooves in the encoder bar for precise positioning, we incorporated the information in 304L stainless steel by transforming the austenite to martensite after bar extrusion in liquid nitrogen and marking it with a laser, which caused a local transformation of martensite back into austenite. 304L has an excellent corrosion resistance, but a low hardness and poor wear resistance, which limits its range of applications. However, nitriding is a very promising way to enhance the mechanical and magnetic properties. After low-temperature nitriding at 400 °C it is clear that both ε- and α′-martensite are present in the deformed microstructure, indicating the simultaneous stress-induced and strain-induced transformations of the austenite. The effects of a laser surface treatment and the consequent appearance of a non-magnetic phase due to the α′ → γ transformation were investigated. The EDS maps show a high concentration of nitrogen in the alternating hard surface layers of γN and α′N (expanded austenite and martensite), but no significantly higher concentration of chromium or iron was detected. The high surface hardness of this nitride layer will lead to steels and encoders with better wear and corrosion resistance. PMID:27492862

Plasma nitriding - an eco friendly surface hardening process

International Nuclear Information System (INIS)

Mukherjee, S.

2015-01-01

Surface hardening is a process of heating the metal such that the surface gets only hardened. This process is adopted for many components like gears, cams, and crankshafts, which desire high hardness on the outer surface with a softer core to withstand the shocks. So, to attain such properties processes like carburising, nitriding, flame hardening and induction hardening are employed. Amongst these processes nitriding is the most commonly used process by many industries. In nitriding process the steel material is heated to a temperature of around 550 C and then exposed to atomic nitrogen. This atomic nitrogen reacts with iron and other alloying elements and forms nitrides, which are very hard in nature. By this process both wear resistance and hardness of the product can be increased. The atomic nitrogen required for this process can be obtained using ammonia gas (gas nitriding), cyanide based salt bath (liquid nitriding) and plasma medium (plasma nitriding). However, plasma nitriding has recently received considerable industrial interest owing to its characteristic of faster nitrogen penetration, short treatment time, low process temperature, minimal distortion, low energy use and easier control of layer formation compared with conventional techniques such as gas and liquid nitriding. This process can be used for all ferrous materials including stainless steels. Plasma nitriding is carried out using a gas mixture of nitrogen and hydrogen gas at sub atmospheric pressures hence, making it eco-friendly in nature. Plasma nitriding allows modification of the surface layers and hardness profiles by changing the gas mixture and temperature. The wide applicable temperature range enables a multitude of applications, beyond the possibilities of gas or salt bath processes. This has led to numerous applications of this process in industries such as the manufacture of machine parts for plastics and food processing, packaging and tooling as well as pumps and hydraulic, machine

Synthesis of carbon nitride powder by selective etching of TiC0.3N0.7 in chlorine-containing atmosphere at moderate temperature

International Nuclear Information System (INIS)

Sui Jian; Lu Jinjun

2010-01-01

We reported the synthesis of carbon nitride powder by extracting titanium from single inorganic precursor TiC 0.3 N 0.7 in chlorine-containing atmosphere at ambient pressure and temperature not exceeding 500 deg. C. The TiC 0.3 N 0.7 crystalline structure acted as a template, supplying active carbon and nitrogen atoms for carbon nitride when it was destroyed in chlorination. X-ray diffraction data showed that the obtained carbon nitride powders were amorphous, which was in good agreement with transmission electron microscope analysis. The composition and structure of carbon nitride powders were analyzed by employing Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Results indicated that disorder structure was most likely for the carbon nitride powders and the N content depended greatly on the chlorination temperature. Thermal analysis in flowing N 2 indicated that the mass loss started from 300 deg. C and the complete decomposition occurred at around 650 deg. C, confirming the low thermal stability of the carbon nitride material.

Influence of the ion nitriding temperature in the wear resistance of AISI H13 tool steel

International Nuclear Information System (INIS)

Heck, Stenio Cristaldo; Fernandes, Frederico Augusto Pires; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Totten, George Edward

2010-01-01

The AISI H13 tool steel for hot work is the most used in its category. This steel was developed for injection molds and extrusion of hot metals as well as for conformation in hot presses and hammers. Plasma nitriding can improve significantly the surface properties of these steels, but the treatments conditions, such as temperature, must be optimized. In this work the influence of nitriding treatment temperature on the wear behavior of this steel is investigated. Samples of AISI H13 steel were quenched and tempered and then ion nitrided in the temperatures of 450, 550 and 650 deg C, at 4mbar pressure, during 5 hours. Samples of the treated material were characterized by optical microscopy, Vickers microhardness, x-ray analysis and wear tests. Plasma nitriding formed hard diffusion zones in all the treated samples. White layers were formed in samples treated at 550 deg C and 650 deg C. The treatment temperature of 450 deg C produced the highest hardness. Treatment temperature showed great influence in the diffusion layer thickness. X-ray analysis indicated the formation of the Fe_3N, Fe_4N and CrN phases for all temperatures, but with different concentrations. Nitriding increased significantly the AISI H13 wear resistance. (author)

Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

Science.gov (United States)

Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

2016-04-26

An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

Electrochemical properties of lanthanum nitride with calcium nitride additions

International Nuclear Information System (INIS)

Lesunova, R.P.; Fishman, L.S.

1986-01-01

This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

Fabrication of vanadium nitride by carbothermal nitridation reaction

International Nuclear Information System (INIS)

Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

2005-01-01

Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

Institute of Scientific and Technical Information of China (English)

HAN Yue-Ping; HAN Yan

2009-01-01

Physical and chemical properties of titanium oxynitride (TiOxNy) formed by low-temperature oxidation of titanium nitride (TIN) layer are investigated for advanced metal-oxide--semiconductor (MOS) gate dielectric application.TiOx Ny exhibits polycrystalline properties after the standard thermal process for MOS device fabrication,showing the preferred orientation at [200].Superior electrical properties of TiOxNy can be maintained before and after the annealing,probably due to the nitrogen incorporation in the oxide bulk and at the interface.Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.

Improvement of the fatigue strength of AISI 4140 steel by an ion nitriding process

Energy Technology Data Exchange (ETDEWEB)

Celik, A. [Atatuerk Univ., Erzurum (Turkey). Dept. of Mech. Eng.; Karadeniz, S. [Dokuz Eyluel Univ., Izmir (Turkey). Dept. of Mech. Eng.

1995-06-01

The influence of plasma nitriding on the fatigue behaviour of AISI 4140 low-alloy steel was investigated under varying process conditions of temperature (500-600 C), time (1-12 h), heat treatment before ion nitriding (quenched and tempered, normalized) and gas mixture (50% H{sub 2}-50% N{sub 2}). A rotating bending fatigue machine was used to determine the fatigue strength. It was found that the plasma nitriding improves the fatigue strength and increases the fatigue limit depending on the surface hardness of the case depth. The microstructure of surface and diffusion layers was examined by optical microscopy. The fracture surface of specimens and the origin of fatigue cracks were observed by scanning electron microscopy.

Application of Self-Propagating High Temperature Synthesis to the Fabrication of Actinide Bearing Nitride and Other Ceramic Nuclear Fuels

International Nuclear Information System (INIS)

Moore, John J.; Reigel, Marissa M.; Donohoue, Collin D.

2009-01-01

The project uses an exothermic combustion synthesis reaction, termed self-propagating high-temperature synthesis (SHS), to produce high quality, reproducible nitride fuels and other ceramic type nuclear fuels (cercers and cermets, etc.) in conjunction with the fabrication of transmutation fuels. The major research objective of the project is determining the fundamental SHS processing parameters by first using manganese as a surrogate for americium to produce dense Zr-Mn-N ceramic compounds. These fundamental principles will then be transferred to the production of dense Zr-Am-N ceramic materials. A further research objective in the research program is generating fundamental SHS processing data to the synthesis of (i) Pu-Am-Zr-N and (ii) U-Pu-Am-N ceramic fuels. In this case, Ce will be used as the surrogate for Pu, Mn as the surrogate for Am, and depleted uranium as the surrogate for U. Once sufficient fundamental data has been determined for these surrogate systems, the information will be transferred to Idaho National Laboratory (INL) for synthesis of Zr-Am-N, Pu-Am-Zr-N and U-Pu-Am-N ceramic fuels. The high vapor pressures of americium (Am) and americium nitride (AmN) are cause for concern in producing nitride ceramic nuclear fuel that contains Am. Along with the problem of Am retention during the sintering phases of current processing methods, are additional concerns of producing a consistent product of desirable homogeneity, density and porosity. Similar difficulties have been experienced during the laboratory scale process development stage of producing metal alloys containing Am wherein compact powder sintering methods had to be abandoned. Therefore, there is an urgent need to develop a low-temperature or low-heat fuel fabrication process for the synthesis of Am-containing ceramic fuels. Self-propagating high temperature synthesis (SHS), also called combustion synthesis, offers such an alternative process for the synthesis of Am nitride fuels. Although SHS

Nano-nitride cathode catalysts of Ti, Ta, and Nb for polymer electrolyte fuel cells: Temperature-programmed desorption investigation of molecularly adsorbed oxygen at low temperature

KAUST Repository

Ohnishi, Ryohji

2013-01-10

TiN, NbN, TaN, and Ta3N5 nanoparticles synthesized using mesoporous graphitic (mpg)-C3N4 templates were investigated for the oxygen reduction reaction (ORR) as cathode catalysts for polymer electrolyte fuel cells. The temperature-programmed desorption (TPD) of molecularly adsorbed O2 at 120-170 K from these nanoparticles was examined, and the resulting amount and temperature of desorption were key factors determining the ORR activity. The size-dependent TiN nanoparticles (5-8 and 100 nm) were then examined. With decreasing particle size, the density of molecularly adsorbed O2 per unit of surface area increased, indicating that a decrease in particle size increases the number of active sites. It is hard to determine the electrochemical active surface area for nonmetal electrocatalysts (such as oxides or nitrides), because of the absence of proton adsorption/desorption peaks in the voltammograms. In this study, O2-TPD for molecularly adsorbed O2 at low temperature demonstrated that the amount and strength of adsorbed O2 were key factors determining the ORR activity. The properties of molecularly adsorbed O2 on cathode catalysts are discussed against the ORR activity. © 2012 American Chemical Society.

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism.

Science.gov (United States)

Lu, Qing; Zhao, Qi; Yang, Tianye; Zhai, Chengbo; Wang, Dongxue; Zhang, Mingzhe

2018-04-18

In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g -1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T C ) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.

The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

2014-11-15

Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

Irradiation temperature dependence of defect formation of nitrides (A1N and c-BN) during neutron irradiations

International Nuclear Information System (INIS)

Atobe, Kozo.; Okada, Moritami; Nakagawa, Masuo

2000-01-01

The nitrogen vacancy concentration in the more refractory nitrides (A1N and c-BN) is determined as a function of reactor fluence up to 5.2x10 17 thermal neutrons/cm 2 and a function of the irradiation temperature at 25, 50, 100, 150, 200, 250 K. It is found that there is no remarkable dependence of the defect formation in nitrides on the irradiation temperature. The production of damage in the nitrides is considerably different from that in oxides. From the irradiation experiments using thermal neutron irradiation field, it is suggested in reactor irradiation that the atomic displacements in the nitrides occur predominately from energetic particles of the nuclear reactions with thermal neutrons in addition to the elastic collisions by fast neutron

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

2014-10-30

Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

Surface analysis in steel nitrides by using Moessbauer spectroscopy

International Nuclear Information System (INIS)

Figueiredo, R.S. de.

1991-07-01

The formation of iron nitride layer at low temperatures, 600-700 K, by Moessbauer spectroscopy is studied. These layers were obtained basically through two different processes: ion nitriding and ammonia gas nitriding. A preliminary study about post-discharge nitriding was made using discharge in hollow cathode as well as microwave excitation. The assembly of these chambers is also described. The analysis of the nitrided samples was done by CEMS and CXMS, aided by optical microscopy, and the CEMS and CXMS detectors were constructed by ourselves. We also made a brief study about these detectors, testing as acetone as the mixture 80% He+10% C H 4 as detection gases for the use of CEMS. The surface analysis of the samples showed that in the ammonia gas process nitriding the nitrided layer starts by the superficial formation of an iron nitride rich nitrogen. By thermal evolution this nitride promotes the diffusion of nitrogen and the formation of other more stable nitrides. (author)

Nitride alloy layer formation of duplex stainless steel using nitriding process

Science.gov (United States)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

RF plasma nitriding of severely deformed iron-based alloys

International Nuclear Information System (INIS)

Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

2003-01-01

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

International Nuclear Information System (INIS)

Li Yang; Wang Liang; Zhang Dandan; Shen Lie

2010-01-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

Science.gov (United States)

Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

2010-11-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.

Microstructural characterization of pulsed plasma nitrided 316L stainless steel

International Nuclear Information System (INIS)

Asgari, M.; Barnoush, A.; Johnsen, R.; Hoel, R.

2011-01-01

Highlights: → The low temperature pulsed plasma nitrided layer of 316 SS was studied. → The plastic deformation induced in the austenite due to nitriding is characterized by EBSD at different depths (i.e., nitrogen concentration). → Nanomechanical properties of the nitride layer was investigated by nanoindentation at different depths (i.e., nitrogen concentration). → High hardness, high nitrogen concentration and high dislocation density is detected in the nitride layer. → The hardness and nitrogen concentration decreased sharply beyond the nitride layer. - Abstract: Pulsed plasma nitriding (PPN) treatment is one of the new processes to improve the surface hardness and tribology behavior of austenitic stainless steels. Through low temperature treatment (<440 deg. C), it is possible to obtain unique combinations of wear and corrosion properties. Such a combination is achieved through the formation of a so-called 'extended austenite phase'. These surface layers are often also referred to as S-phase, m-phase or γ-phase. In this work, nitrided layers on austenitic stainless steels AISI 316L (SS316L) were examined by means of a nanoindentation method at different loads. Additionally, the mechanical properties of the S-phase at different depths were studied. Electron back-scatter diffraction (EBSD) examination of the layer showed a high amount of plasticity induced in the layer during its formation. XRD results confirmed the formation of the S-phase, and no deleterious CrN phase was detected.

The relationship of microstructure and temperature to fracture mechanics parameters in reaction bonded silicon nitride

International Nuclear Information System (INIS)

Jennings, H.M.; Dalgleish, B.J.; Pratt, P.L.

1978-01-01

The development of physical properties in reaction bonded silicon nitride has been investigated over a range of temperatures and correlated with microstructure. Fracture mechanics parameters, elastic moduli, strength and critical defect size have been determined. The nitrided microstructure is shown to be directly related to these observed properties and these basic relationships can be used to produce material with improved properties. (orig.) [de

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

International Nuclear Information System (INIS)

Anselin, F.

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

Feasibility study of Boron Nitride coating on Lithium-ion battery casing

International Nuclear Information System (INIS)

Saw, L.H.; Ye, Y.; Tay, A.A.O.

2014-01-01

Increasing in public awareness about global warming and exhaustion of energy resources has led to a flourishing electric vehicle industry that would help realize a zero-emission society. The thermal management of battery packs, which is an essential issue closely linked to a number of challenges for electric vehicles including cost, safety, reliability and lifetime, has been extensively studied. However, relatively little is known about the thermal effect of polymer insulation on the Lithium-ion battery casing. This study investigates the feasibility of replacing the polymer insulation with a Boron Nitride coating on the battery casing using the Taguchi experimental method. The effect of casing surface roughness, coating thickness and their interaction were examined using orthogonal array L 9 (3 4 ). Nominal the best is chosen for the optimization process to achieve optimum adhesion strength. In addition, the thermal improvements of the coating as compared to conventional polymer insulator on the battery are further investigated. - Highlights: • We studied the Boron Nitride coating on battery casing using Taguchi method. • We investigated the effect of surface roughness and coating thickness on adhesion strength. • We compared the effect of coating and polymer insulator in heat transfer. • The Boron Nitride coating could enhance the thermal management of the battery

Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

Science.gov (United States)

Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

2017-08-01

In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

Effect of component's geometry on the plasma nitriding behavior of AISI 4340 steel

International Nuclear Information System (INIS)

Asadi, Z. Soltani; Mahboubi, F.

2012-01-01

Highlights: → The thickness of the compound layer increases with increasing in temperature and groove width. → Surface layer at the remote regions from the edge is thinner than that of closer regions. → The hardness and the case depth of the nitrided layer increase with increasing the width of the groove. → Intensity of ε phase increases with increasing the width of the groove in both methods. → The ASPN specimens are covered by hexagonal particles and for the CPN by cauliflower shape nitrides. -- Abstract: The main aim of this work was to investigate the effect of the sample geometry on properties of the conventional plasma nitrided (CPN) and active screen plasma nitrided (ASPN) steel. Sample assemblies consisting of rectangular grooved steel blocks with different groove dimensions of 2, 4, 6, 8 and 10 (W) x 40 (H) x 20 (L) mm 3 and AISI 4340 steel plates (substrates) with dimensions of 10 x 40 x 60 mm 3 , to serve as groove cover, were prepared. The sample assemblies were conventional and active screen plasma nitrided under the gas mixture of 75%N 2 + 25%H 2 , at temperatures of 500 o C and 540 o C, pressure of 4 torr, for 5 h. Properties of the nitrided substrates were investigated by evaluating compound layer thickness, case depth, phase composition and hardness profile. Results of the experiments showed that the thickness of the compound layer, hardness and nitrided case depth increased with increasing the width of the groove for both methods. Also, in each sample, nitrogen atoms penetrated more deeply in the regions of the groove closer to the edge. Hallow cathode effect occurred at the sample with 2 mm width groove, in the CPN method, leading to the overheating of the sample. In ASPN, the hardness and the nitrided case depth are lower in comparison with CPN. The surface morphology of the CPN treated samples consists of cauliflower shape surface nitrides while the surface of the AS plasma nitrided samples are covered by the hexagonal particles with

Effect of Plastic Pre-straining on Residual Stress and Composition Profiles in Low-Temperature Surface-Hardened Austenitic Stainless Steel

DEFF Research Database (Denmark)

Bottoli, Federico; Christiansen, Thomas Lundin; Winther, Grethe

2016-01-01

The present work deals with the evaluation of the residual stress profiles in expanded austenite by applying grazing incidence X-ray diffraction (GI-XRD) combined with successive sublayer removal. Annealed and deformed (εeq=0.5) samples of stable stainless steel EN 1.4369 were nitrided...... or nitrocarburized. The residual stress profiles resulting from the thermochemical low-temperature surface treatment were measured. The results indicate high-residual compressive stresses of several GPa’s in the nitrided region, while lower-compressive stresses are produced in the carburized case. Plastic...... deformation in the steel prior to thermochemical treatment has a hardly measurable influence on the nitrogen-rich zone, while it has a measurable effect on the stresses and depth of the carbon-rich zone....

Nitriding the influence of plasma in resistance to wear micro abrasive tool steel AISI D2

International Nuclear Information System (INIS)

Gobbi, Vagner Joao; Gobb, Silvio Jose; Silva, Cosme Roberto Moreira da

2010-01-01

This work studies the influence of time of treatment in the formation of nitride layer of AISI D2 tool steel and the resistance to micro-abrasive wear from the technique of nitriding in plasma. The samples were nitrides at 400 ° C with a pressure of 4.5 mbar (450 Pa) and using a gas mixture of 80% vol.H2 and 20% vol.N2. The times of treatment were: 30, 60, 120, 180 and 360 minutes. The properties of the layers in the samples obtained nitrides were assessed by surface microhardness, profiles of microhardness, metallography analysis, X-ray diffraction and test for resistance to micro-abrasive wear. The best results for nitriding to 400 deg C, was obtained with the time of treatment of 360 minutes. In this case the increase in surface hardness was 94.6% and resistance to micro-abrasive wear of 15%. This increase in hardness may be associated with high concentration of nitrogen in the crystalline network of iron-α and additional training of nitrides. Low temperature of nitriding reduces between grain fragility to reduce the likelihood of precipitation of nitrides in a continuous manner in the austenite grain boundaries and the absence of previous ε'+ γ phases. (author)

Multi-stage pulsed laser deposition of aluminum nitride at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Duta, L. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Stan, G.E. [National Institute of Materials Physics, 105 bis Atomistilor Street, 077125 Magurele (Romania); Stroescu, H.; Gartner, M.; Anastasescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Fogarassy, Zs. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklos u. 29-33, H-1121 Budapest (Hungary); Mihailescu, N. [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania); Szekeres, A., E-mail: szekeres@issp.bas.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Bakalova, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Mihailescu, I.N., E-mail: ion.mihailescu@inflpr.ro [National Institute for Lasers, Plasma, and Radiation Physics, 409 Atomistilor Street, 077125 Magurele (Romania)

2016-06-30

Highlights: • Multi-stage pulsed laser deposition of aluminum nitride at different temperatures. • 800 °C seed film boosts the next growth of crystalline structures at lower temperature. • Two-stage deposited AlN samples exhibit randomly oriented wurtzite structures. • Band gap energy values increase with deposition temperature. • Correlation was observed between single- and multi-stage AlN films. - Abstract: We report on multi-stage pulsed laser deposition of aluminum nitride (AlN) on Si (1 0 0) wafers, at different temperatures. The first stage of deposition was carried out at 800 °C, the optimum temperature for AlN crystallization. In the second stage, the deposition was conducted at lower temperatures (room temperature, 350 °C or 450 °C), in ambient Nitrogen, at 0.1 Pa. The synthesized structures were analyzed by grazing incidence X-ray diffraction (GIXRD), transmission electron microscopy (TEM), atomic force microscopy and spectroscopic ellipsometry (SE). GIXRD measurements indicated that the two-stage deposited AlN samples exhibited a randomly oriented wurtzite structure with nanosized crystallites. The peaks were shifted to larger angles, indicative for smaller inter-planar distances. Remarkably, TEM images demonstrated that the high-temperature AlN “seed” layers (800 °C) promoted the growth of poly-crystalline AlN structures at lower deposition temperatures. When increasing the deposition temperature, the surface roughness of the samples exhibited values in the range of 0.4–2.3 nm. SE analyses showed structures which yield band gap values within the range of 4.0–5.7 eV. A correlation between the results of single- and multi-stage AlN depositions was observed.

Degradation of nitride coatings in low-pressure gas discharge plasma

Science.gov (United States)

Ivanov, Yurii; Shugurov, Vladimir; Krysina, Olga; Petrikova, Elizaveta; Tolkachev, Oleg

2017-12-01

The paper provides research data on the defect structure, mechanical characteristics, and tribological properties of commercially pure VT1-0 titanium exposed to surface modification on a COMPLEX laboratory electron-ion plasma setup which allows nitriding, coating deposition, and etching in low-pressure gas discharge plasma in a single vacuum cycle. It is shown that preliminary plasma nitriding forms a columnar Ti2N phase in VT1-0 titanium and that subsequent TiN deposition results in a thin nanocrystalline TiN layer. When the coating-substrate system is etched, the coating fails and the tribological properties of the material degrade greatly.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Li Yang [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Wang Liang, E-mail: wlimt@yahoo.com [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China); Zhang Dandan; Shen Lie [Department of Materials Science and Engineering, Dalian Maritime University, Institute of Metals and Technology, 1 Linghai Street, Dalian 116026 (China)

2010-11-15

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 deg. C for 8 h in an NH{sub 3} gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 deg. C for 8 h can produced a compound layer of 2.5 {mu}m thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 deg. C within the same time.

Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

2015-03-15

A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

Science.gov (United States)

Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

2014-01-01

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

Characterization of plasma nitrided layers produced on sintered iron

Directory of Open Access Journals (Sweden)

Marcos Alves Fontes

2014-07-01

Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

International Nuclear Information System (INIS)

Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

2014-01-01

Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

Methods for improved growth of group III nitride buffer layers

Science.gov (United States)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

2014-07-15

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

Science.gov (United States)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

International Nuclear Information System (INIS)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

2010-01-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

Science.gov (United States)

Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

1983-01-01

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

New Routes to Lanthanide and Actinide Nitrides

Energy Technology Data Exchange (ETDEWEB)

Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

2009-06-15

The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

Application of low-temperature plasma for the synthesis of hydrogenated graphene (graphane)

Science.gov (United States)

Shavelkina, M. B.; Amirov, R. H.; Katarzhis, V. A.; Kiselev, V. I.

2017-12-01

The possibility of a direct synthesis of hydrogenated graphene in decomposition of methane by means of low-temperature plasma was investigated. A DC plasma torch with an expanding channel-anode, a vortex gas supply and a self-setting arc length was used as a generator of low-temperature plasma. Argon was used as the plasma-forming gas. The temperatures of argon plasma and with methane addition to it were determined on the basis of spectral measurements. The synthesis products were characterized by electron microscopy and thermogravimetry. The effect of hydrogenated graphene as a nanomodifier on the properties of the cubic boron nitride based functional ceramics was investigated.

Structure and Properties of Burnished and Nitrided AISI D2 Tool Steel

Directory of Open Access Journals (Sweden)

Daniel TOBOŁA

2015-11-01

Full Text Available D2 belongs to traditional steels, frequently used in metalworking industry. Shot peening and nitriding are known to improve the wear resistance of D2. In this work we focus on processes of slide burnishing and industrial low temperature gas nitriding. The D2 steel specimens were first subjected to heat treatments (HT prescribed by the manufacturer, turning (T, then burnishing (B and nitriding (N. The reason for turning was achieving appropriate surface roughness. Deformation induced in slide burnishing can be better controlled then in shot peening because of deterministic nature of this process. Four different paths to prepare surfaces were employed: HT + T, HT + T + B, HT + T + N, HT + T + B + N. D2 steel is very sensitive to the final finishing, wear rates vary up to 300 %. Two of our procedures (HT + T + N and HT + T + B + N are much superior to the others. Moreover, in the HT + T + N case, apparently the surface fatigue scaling off takes place.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.7224

Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

International Nuclear Information System (INIS)

Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

2004-01-01

Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

Hot pressing of uranium nitride and mixed uranium plutonium nitride

International Nuclear Information System (INIS)

Chang, J.Y.

1975-01-01

The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

The influence of surface layer nitriding on phase composition and tribological properties of cast steel

International Nuclear Information System (INIS)

Brzozka, K; Gorka, B; Gawronski, M; Budzynowski, T W

2010-01-01

The effect of two-stage low-temperature nitriding on atomic structure and mechanical properties of selected cast steels is investigated. Conversion electron Moessbauer spectroscopy has been used to investigate nitrides formation. In order to study tribological characteristics, tests of friction and reflecting electron microscopy measurements have been performed. It has been found that thin nitrides layer (composed mainly of γ'-Fe 4 N) arises in the course of the nitriding procedure in most of investigated cast steels, what considerably affects their microstructure and tribological properties.

Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

Energy Technology Data Exchange (ETDEWEB)

Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

2010-10-01

Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

Electron trapping during irradiation in reoxidized nitrided oxide

International Nuclear Information System (INIS)

Mallik, A.; Vasi, J.; Chandorkar, A.N.

1993-01-01

Isochronal detrapping experiments have been performed following irradiation under different gate biases in reoxidized nitrided oxide (RNO) MOS capacitors. These show electron trapping by the nitridation-induced electron traps at low oxide fields during irradiation. A difference in the detrapping behavior of trapped holes and electrons is observed, with trapped holes being detrapped at relatively lower temperatures compared to trapped electrons. Electron trapping shows a strong dependence on tile magnitude of the applied gate bias during irradiation but is independent of its polarity. Conventional oxide devices, as expected, do not show any electron trapping during irradiation by the native electron traps. Finally, a comparison of the isochronal detrapping behavior following irradiation and following avalanche injection of electrons has been made to estimate the extent of electron trapping. The results show that electron trapping by the nitridation-induced electron traps does not play the dominant role in improving radiation performance of RNO, though its contribution cannot be completely neglected for low oxide field irradiations

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

Preparation of uranium nitride

International Nuclear Information System (INIS)

Potter, R.A.; Tennery, V.J.

1976-01-01

A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

Annealing effect on the microstructure modification and tribological properties of amorphous carbon nitride films

Science.gov (United States)

Wang, Zhou; Wang, Chengbing; Wang, Qi; Zhang, Junyan

2008-10-01

The influences of thermal annealing on the microstructural and tribological properties of amorphous carbon nitride films were investigated. X-ray photoelectron spectroscopy, Raman spectroscopy, and Fourier transform infrared spectrometer were utilized to characterize bond configuration and chemical state of the films. The results indicated that at low annealing temperatures (200 and 300 °C), the volatile species and surface contamination are easily dissociated without obvious bulk modification; while at high annealing temperatures (400 and 500 °C), the microstructure of carbon nitride films changed and favored a graphitization process, which indicated the growth of more graphitic film structures. The faint Raman signal of C≡N decreased with annealing temperature (TA) and completely disappeared at TA of 500 °C, indicating that nitrile bonds were thermal unstable under high temperature. Surprisingly, the tribological properties of the films showed a remarkably decreasing in friction coefficient as the TA increased; it is attributed to the graphitization of carbon nitride films during thermal annealing, which favored transfer film formation between the carbon nitride films and counterface materials. The transfer films benefit the decrease in coefficient of friction.

Annealing and deposition effects of the chemical composition of silicon rich nitride

DEFF Research Database (Denmark)

Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

2005-01-01

Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

The Influence of Hot-Rolled Temperature on Plasma Nitriding Behavior of Iron-Based Alloys

Science.gov (United States)

El-Hossary, F. M.; Khalil, S. M.; Lotfy, Kh.; Kassem, M. A.

2009-07-01

Experiments were performed with an aim of studying the effect of hot-rolled temperature (600 and 900°C) on radio frequency (rf) plasma nitriding of Fe93Ni4Zr3 alloy. Nitriding was carried out for 10 min in a nitrogen atmosphere at a base pressure of 10-2 mbarr. Different continuous plasma processing powers of 300-550 W in steps 50 W or less were applied. Nitrided hot-rolled specimens were characterized by optical microscopy (OM), X-ray diffraction (XRD) and microhardness measurements. The results reveal that the surface of hot-rolled rf plasma nitrided specimens at 600°C is characterized with a fine microstructure as a result of the high nitrogen solubility and diffusivity. Moreover, the hot-rolled treated samples at 600°C exhibit higher microhardness value than the associated values of hot-rolled treated samples at 900°C. The enhancement of microhardness is due to precipitation and predominance of new phases ( γ and ɛ phases). Mainly, this conclusion has been attributed to the high defect densities and small grain sizes of the samples hot-rolled at 600°C. Generally, the refinement of grain size plays a dramatic role in improvement of mechanical properties of tested samples.

Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature

Science.gov (United States)

Shimabayashi, Masaharu; Kurihara, Kazuaki; Sasaki, Koichi

2018-05-01

We remotely irradiated a nitrogen plasma onto the carbon-side surface of 4H-SiC at a low temperature, and examined the effect of sample cooling on the characteristics of the nitride layer. An improved nitride layer, which had higher concentrations of carbon and silicon and a lower concentration of oxygen, was formed in the region at depths of more than 0.6–0.9 nm from the top surface. The depth of the fragile nitride layer in the top region, where no improved characteristics of the nitride layer were observed, became smaller with sample cooling. In addition, on the basis of the experimental results, we discussed the difference in the activation energy of the nitriding reaction of 4H-SiC supported by atomic nitrogen and molecular nitrogen in the metastable \\text{A}3Σ \\text{u} + state.

Evaluating the Properties of High-Temperature and Low-Temperature Wear of TiN Coatings Deposited at Different Temperatures

Directory of Open Access Journals (Sweden)

B. Khorrami Mokhori

2017-02-01

Full Text Available In this research titanium nitride (TiN films were prepared by plasma assisted chemical vapor deposition using TiCl4, H2, N2 and Ar on the AISI H13 tool steel. Coatings were deposited during different substrate temperatures (460°C, 480 ° C  and 510 °C. Wear tests were performed in order to study the acting wear mechanisms in the high(400 °C and low (25 °C temperatures by ball on disc method. Coating structure and chemical composition were characterized using scanning electron microscopy, microhardness and X-ray diffraction. Wear test result was described in ambient temprature according to wear rate. It was evidenced that the TiN coating deposited at 460 °C has the least weight loss with the highest hardness value. The best wear resistance was related to the coating with the highest hardness (1800 Vickers. Wear mechanisms were observed to change by changing wear temperatures. The result of wear track indicated that low-temprature wear has surface fatigue but high-temperature wear showed adhesive mechanism.

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

Science.gov (United States)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2014-04-15

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

International Nuclear Information System (INIS)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

2014-01-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Structure and electrochemical properties of plasma-nitrided low alloy steel

Energy Technology Data Exchange (ETDEWEB)

Chyou, S.D.; Shih, H.C. (Dept. of Materials Science and Engineering, National Tsing Hua Univ., Hsinchu (Taiwan))

1990-10-01

Plasma-nitrided SAE 4140 steel has been widely applied industrially because of its superior resistance to wear and fatigue. However, its corrosion behaviour in aqueous environments has not been completely explored. The effects of nitriding on corrosion were investigated by performing electrochemical tests on both nitrided and untreated SAE 4140. It was found that, by plasma nitriding, the corrosion resistance improved significantly in HNO{sub 3} and Na{sub 2}SO{sub 4} aqueous environments. A reaction model is proposed to explain the beneficial effect of nitride on corrosion resistance. It is concluded that nitrogen and chromium (an alloying element) act synergistically to form a dense protective layer which is responsible for the corrosion resistance. Characterization of the surface layers by Auger electron spectroscopy and X-ray photoelectron spectroscopy reveals that the protective layer is composed of (Fe, Cr){sub 4}N, (Fe, Cr){sub 2-3}N and CrN in the inner layer, Fe{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} together with nitrides in the middle layer, and nitrides, {gamma}'-FeOOH, and Cr(OH){sub 3}.H{sub 2}O in the outermost layer. (orig.).

Surface modification of titanium by plasma nitriding

Directory of Open Access Journals (Sweden)

Kapczinski Myriam Pereira

2003-01-01

Full Text Available A systematic investigation was undertaken on commercially pure titanium submitted to plasma nitriding. Thirteen different sets of operational parameters (nitriding time, sample temperature and plasma atmosphere were used. Surface analyses were performed using X-ray diffraction, nuclear reaction and scanning electron microscopy. Wear tests were done with stainless steel Gracey scaler, sonic apparatus and pin-on-disc machine. The obtained results indicate that the tribological performance can be improved for samples treated with the following conditions: nitriding time of 3 h; plasma atmosphere consisting of 80%N2+20%H2 or 20%N2+80%H2; sample temperature during nitriding of 600 or 800 degreesC.

Development of new ferritic alloys reinforced by nano titanium nitrides

International Nuclear Information System (INIS)

Mathon, M.H.; Perrut, M.; Poirier, L.; Ratti, M.; Hervé, N.; Carlan, Y. de

2015-01-01

Nano-reinforced steels are considered for future nuclear reactors or for application at high temperature like the heat exchangers tubes or plates. Oxide Dispersion Strengthened (ODS) alloys are the most known of the nano-reinforced alloys. They exhibit high creep strength as well as high resistance to radiation damage. This article deals with the development of new nano reinforced alloys called Nitride Dispersed Strengthened (NDS). Those are also considered for nuclear applications and could exhibit higher ductility with a simplest fabrication way. Two main fabrication routes were studied: the co-milling of Fe–18Cr1W0.008N and TiH 2 powders and the plasma nitration at low temperature of a Fe–18Cr1W0.8Ti powder. The materials were studied mainly by Small Angle Neutron Scattering. The feasibility of the reinforcement by nano-nitride particles is demonstrated. The final size of the nitrides can be similar (few nanometers) to the nano-oxides observed in ODS alloys. The mechanical properties of the new NDS show an amazing ductility at high temperature for a nano-reinforced alloy

Development of new ferritic alloys reinforced by nano titanium nitrides

Energy Technology Data Exchange (ETDEWEB)

Mathon, M.H., E-mail: marie-helene.mathon@cea.fr [Laboratoire Léon Brillouin, CEA-CNRS, CEA/Saclay, 91191 Gif-sur-Yvette (France); Perrut, M., E-mail: mikael.perrut@onera.fr [Laboratoire Léon Brillouin, CEA-CNRS, CEA/Saclay, 91191 Gif-sur-Yvette (France); Poirier, L., E-mail: poirier@nitruvid.com [Bodycote France and Belgium, 9 r Jean Poulmarch, 95100 Argenteuil (France); Ratti, M., E-mail: mathieu.ratti@snecma.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F91191 Gif-sur-Yvette (France); Hervé, N., E-mail: nicolas.herve@cea.fr [CEA, DRT, LITEN, F38054 Grenoble (France); Carlan, Y. de, E-mail: yann.decarlan@cea.fr [CEA, DEN, Service de Recherches Métallurgiques Appliquées, F91191 Gif-sur-Yvette (France)

2015-01-15

Nano-reinforced steels are considered for future nuclear reactors or for application at high temperature like the heat exchangers tubes or plates. Oxide Dispersion Strengthened (ODS) alloys are the most known of the nano-reinforced alloys. They exhibit high creep strength as well as high resistance to radiation damage. This article deals with the development of new nano reinforced alloys called Nitride Dispersed Strengthened (NDS). Those are also considered for nuclear applications and could exhibit higher ductility with a simplest fabrication way. Two main fabrication routes were studied: the co-milling of Fe–18Cr1W0.008N and TiH{sub 2} powders and the plasma nitration at low temperature of a Fe–18Cr1W0.8Ti powder. The materials were studied mainly by Small Angle Neutron Scattering. The feasibility of the reinforcement by nano-nitride particles is demonstrated. The final size of the nitrides can be similar (few nanometers) to the nano-oxides observed in ODS alloys. The mechanical properties of the new NDS show an amazing ductility at high temperature for a nano-reinforced alloy.

Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

Directory of Open Access Journals (Sweden)

Mahmoud Hassan R. S.

2014-07-01

Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

The kinetics of dynamic recrystallization of a low carbon vanadium-nitride microalloyed steel

International Nuclear Information System (INIS)

Zhao, Baochun; Zhao, Tan; Li, Guiyan; Lu, Qiang

2014-01-01

Single-pass compression tests were performed on a Gleeble-3800 thermo-mechanical simulator to study the dynamic recrystallization behavior of a low carbon vanadium-nitride microalloyed steel at the temperature in the range from 900 °C to 1050 °C and strain rate in the range from 0.1 s −1 to 10 s −1 . Based on the flow curves from the tests, the effects of temperature and strain rate on the dynamic recrystallization behavior were analyzed. With the assistance of the process parameters, constitutive equations were used to obtain the activation energy and hot working equation. The strain hardening rate versus stress curves were used to determine the critical stress (strain) or the peak stress (strain). The dependence of the characteristic values on Zener–Hollomon was found. The dynamic recrystallization kinetics model of the tested steel was constructed and the validity was confirmed based on the experimental results

Surface nanocrystallization by surface mechanical attrition treatment and its effect on structure and properties of plasma nitrided AISI 321 stainless steel

Energy Technology Data Exchange (ETDEWEB)

Lin Yimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China) and Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China)]. E-mail: linyimin_2001@yahoo.com.cn; Lu Jian [LASMIS, University of Technology of Troyes, 10000 Troyes (France); Wang Liping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Xu Tao [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China); Xue Qunji [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, 18 Middle Tianshui Road, Lanzhou 730000 (China)]. E-mail: qjxue@ns.lzb.ac.cn

2006-12-15

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 321 austenitic stainless steel by means of surface mechanical attrition treatment (SMAT). Low-temperature nitriding of SMAT and un-SMAT AISI 321 stainless steel was carried out in pulsed-DC glow discharge. The effect of SMAT pretreatment on the microstructure and properties of the stainless steel were investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Vickers hardness tester and UMT-2MT tribometer. The results show that the plasma nitriding of AISI 321 steel can be enhanced considerably by means of SMAT process before nitriding, and a much thicker nitrogen diffusion layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples. In addition, the wear resistance and load capacity of the nitrided layers on the SMAT samples was much higher than that of the un-SMAT samples due to the thicker S phase case and the gradient nitrogen diffusion layer.

Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

International Nuclear Information System (INIS)

Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

2012-01-01

General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB 2 , ZrB 2 , NbB 2 , CeB 6 , PrB 6 , SmB 6 , EuB 6 , LaB 6 ), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN 2 , VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN 3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

Preparation and characteristics of various rare earth nitrides

International Nuclear Information System (INIS)

Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

2008-01-01

Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

Science.gov (United States)

Matsusue, K.; Takahara, K.; Hashimoto, R.

1984-01-01

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Ion nitriding of aluminium

International Nuclear Information System (INIS)

Fitz, T.

2002-09-01

The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

Nitriding of high speed steel

International Nuclear Information System (INIS)

Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

2010-01-01

Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

Solid state alloying by plasma nitriding and diffusion annealing treatment for austenitic stainless steel

International Nuclear Information System (INIS)

Pinedo, C.E.; Vatavuk, J.; Oliveira, S.D. de; Tschiptschin, A.P.

1999-01-01

Nitrogen has been added to stainless steels to improve mechanical strength and corrosion resistance. High nitrogen steel production is limited by high gas pressure requirements and low nitrogen solubility in the melt. One way to overcome this limitation is the addition of nitrogen in solid state because of its higher solubility in austenite. However, gas and salt bath nitriding have been done at temperatures around 550 C, where nitrogen solubility in the steel is still very low. High temperature nitriding has been, thus proposed to increase nitrogen contents in the steel but the presence of oxide layers on top of the steel is a barrier to nitrogen intake. In this paper a modified plasma nitriding process is proposed. The first step of this process is a hydrogen plasma sputtering for oxide removal, exposing active steel surface improving nitrogen pickup. This is followed by a nitriding step where high nitrogen contents are introduced in the outermost layer of the steel. Diffusion annealing is then performed in order to allow nitrogen diffusion into the core. AISI 316 austenitic stainless steel was plasma nitrided and diffusion annealed at 1423K, for 6 hours, with 0.2 MPa nitrogen pressure. The nitrided steel presented ∝60 μm outermost compact layer of (Fe,Cr) 3 N and (Fe,Cr) 4 N with 11 wt.% N measured by surface depth profiling chemical analysis - GDS system. During the annealing treatment the nitride layer was dissolved and nitrogen diffused to the core of the sample leaving more even nitrogen distribution into the steel. Using this technique one-millimetre thick sample were obtained having high nitrogen content and uniform distribution through the thickness. (orig.)

Nitrogen transport during plasma-enhanced case nitriding of stainless steels - the effects of the passivating oxide layer; Stickstofftransport waehrend der plasmagestuetzten Randaufstickung nichtrostender Staehle - der Einfluss der passivierenden Oxidschicht

Energy Technology Data Exchange (ETDEWEB)

Parascandola, S.; Kruse, O.; Richter, E. [Forschungszentrum Rossendorf e.V. (FZR), Dresden (Germany). Inst. fuer Ionenstrahlphysik und Materialforschung; Moeller, W.

1998-12-31

Plasma-enhanced case nitriding at moderate temperatures is a promising technique for surface treatment of components made of stainless steels. In-situ ERD permits time-resolved and depth-dependent elemental analysis during the case nitriding process. This offers possibilities for process characterisation which are only briefly discussed in the paper. The oxide layer at the surface of the steel is a barrier to nitrogen input. In order to achieve fast nitrogen diffusion into the material, the oxide layer has to be largely removed in the low-energy ion implantation process. The observed equilibrium between diffusion and re-absorption is in good agreement with calculated as well as empirical results. (orig./CB) [Deutsch] Die plasmagestuetzte Randaufstickung bei moderaten Temperaturen ist eine erfolgversprechende Technologie zur Oberflaechenveredelung von Bauteilen aus nichtrostendem Stahl. Die Analytik mit in-situ ERD erlaubt zeit- und tiefenaufgeloeste Elementanalyse waehrend des Aufstickungsprozesses. Dadurch ergeben sich Moeglichkeiten der Prozesscharakterisierung, die hier nur angedeutet werden konnten. Die Oxidschicht an der Oberflaeche der nichtrostenden Staehle stellt eine Barriere fuer den Stickstoffeintrag dar. Fuer schnelle Stickstoffdiffusion muss die Oxidschicht bei der Niederenergie-Ionenimplantation weitgehend abgebaut werden. Das beobachtete Gleichgewicht zwischen Zerstaeubung und Wiederbelegung stimmt gut mit Simulationsrechnungen bzw. empirischen Werten ueberein. (orig.)

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Yushen [Jiangsu Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500 (China); Deng, Xiaohui [Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421008 (China); Zhang, G. P. [Department of Physics, Indiana State University, Terre Haute, Indiana 47809 (United States)

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

Direct bonding of ALD Al₂O₃ to silicon nitride thin films

DEFF Research Database (Denmark)

Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

2017-01-01

microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

Plasma nitriding of a precipitation hardening stainless steel to improve erosion and corrosion resistance

International Nuclear Information System (INIS)

Cabo, Amado; Bruhl, Sonia P.; Vaca, Laura S.; Charadia, Raul Charadia

2010-01-01

Precipitation hardening stainless steels are used as structural materials in the aircraft and the chemical industry because of their good combination of mechanical and corrosion properties. The aim of this work is to analyze the structural changes produced by plasma nitriding in the near surface of Thyroplast PH X Supra®, a PH stainless steel from ThyssenKrupp, and to study the effect of nitriding parameters in wear and corrosion resistance. Samples were first aged and then nitriding was carried out in an industrial facility at two temperatures, with two different nitrogen partial pressures in the gas mixture. After nitriding, samples were cut, polished, mounted in resin and etched with Vilella reagent to reveal the nitrided case. Nitrided structure was also analyzed with XRD. Erosion/Corrosion was tested against sea water and sand flux, and corrosion in a salt spray fog (ASTM B117). All nitrided samples presented high hardness. Samples nitrided at 390 deg C with different nitrogen partial pressure showed similar erosion resistance against water and sand flux. The erosion resistance of the nitrided samples at 500 deg C was the highest and XRD revealed nitrides. Corrosion resistance, on the contrary, was diminished; the samples suffered of general corrosion during the salt spray fog test. (author)

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

Syntheses, Characterization and Kinetics of Nickel-Tungsten Nitride Catalysts for Hydrotreating of Gas Oil

Science.gov (United States)

Botchwey, Christian

This thesis summarizes the methods and major findings of Ni-W(P)/gamma-Al 2O3 nitride catalyst synthesis, characterization, hydrotreating activity, kinetic analysis and correlation of the catalysts' activities to their synthesis parameters and properties. The range of parameters for catalyst synthesis were W (15-40 wt%), Ni (0-8 wt%), P (0-5 wt%) and nitriding temperature (TN) (500-900 °C). Characterization techniques used included: N2 sorption studies, chemisorption, elemental analysis, temperature programmed studies, x-ray diffraction, scanning electron microscopy, energy dispersive x-ray, infrared spectroscopy, transmission electron microscopy and x-ray absorption near edge structure. Hydrodesulfurization (HDS), hydrodenitrogenation (HDN) and hydrodearomatization (HDA) were performed at: temperature (340-380 °C), pressure (6.2-9.0 MPa), liquid hourly space velocity (1-3 h-1) and hydrogen to oil ratio (600 ml/ml, STP). The predominant species on the catalyst surface were Ni3N, W2N and bimetallic Ni2W3N. The bimetallic Ni-W nitride species was more active than the individual activities of the Ni3N and W2N. P increased weak acid sites while nitriding temperature decreased amount of strong acid sites. Low nitriding temperature enhanced dispersion of metal particles. P interacted with Al 2O3 which increased the dispersion of metal nitrides on the catalyst surface. HDN activity increased with Ni and P loading but decreased with increase in nitriding temperature (optimum conversion; 60 wt%). HDS and HDA activities went through a maximum with increase in the synthesis parameters (optimum conversions; 88. wt% for HDS and 47 wt% for HDA). Increase in W loading led to increase in catalyst activity. The catalysts were stable to deactivation and had the nitride structure conserved during hydrotreating in the presence of hydrogen sulfide. The results showed good correlation between hydrotreating activities (HDS and HDN) and the catalyst nitrogen content, number of exposed

Topotactic synthesis of vanadium nitride solid foams

International Nuclear Information System (INIS)

Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

1993-01-01

Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

Tribological and microstructural characteristics of ion-nitrided steels

Science.gov (United States)

Spalvins, T.

1983-01-01

Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Genel, K. [Sakarya Univ., Adapazari (Turkey). Mech. Eng. Dept.; Demirkol, M.; Guelmez, T. [Faculty of Mechanical Engineering, Istanbul Technical University, Guemuessuyu, 80191, Istanbul (Turkey)

2000-08-31

Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10{sup 7} cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

Corrosion fatigue behaviour of ion nitrided AISI 4140 steel

International Nuclear Information System (INIS)

Genel, K.

2000-01-01

Machine components suffer from corrosion degradation of fatigue characteristics and improvement can be attained by the application of a nitriding treatment, particularly to low alloy steels. In the present study, the effect of ion nitriding on corrosion fatigue performance of AISI 4140 steel has been investigated by conducting a series of rotary bending corrosion fatigue tests at 95 Hz, in 3% NaCl aqueous solution. Hourglass shaped, 4 mm diameter fatigue specimens were ion nitrided at 748 K for 1, 3, 8 and 16 h prior to the tests. It was observed that distinct fatigue limit behaviour of ion nitrided steel in air completely disappeared in corrosive environment besides severe degradation in fatigue characteristics. An improvement reaching to 60% in corrosion fatigue strength can be attained by successive ion nitriding practice based on a fatigue life of 10 7 cycles. An attempt was made to establish an empirical relationship between corrosion fatigue strength and relative case depth, which considers the size of the ion nitrided specimen. It was also determined that a power relationship holds between corrosion fatigue strength and fatigue life of ion nitrided steel. The presence of white layer has resulted in additional improvement in corrosion fatigue resistance, and it was observed that corrosion fatigue cracks were initiated dominantly under the white layer by pit formation mechanism. (orig.)

Characterization of Titanium films for low temperature detectors

Science.gov (United States)

Monticone, E.; Rajteri, M.; Rastello, M. L.; Lacquaniti, V.; Gandini, C.; Pasca, E.; Ventura, G.

2002-02-01

In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory .

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Low temperature surface hardening of stainless steel; the role of plastic deformation

DEFF Research Database (Denmark)

Bottoli, Federico; Jespersen, Freja Nygaard; Hattel, Jesper Henri

2016-01-01

: - plastic deformation of metastable austenitic stainless steels leads to the development of strain-induced martensite, which compromises the uniformity and the homogeneity of the expanded austenite zone. - during low temperature surface engineering composition and stress profiles develop. On numerical......Thermochemical surface engineering by nitriding of austenitic stainless steel transforms the surface zone into expanded austenite, which improves the wear resistance of the stainless steel while preserving the stainless behavior. As a consequence of the thermochemical surface engineering, huge...

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Energy Technology Data Exchange (ETDEWEB)

Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

2013-05-01

Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

Invar hardening under keeping of low values of temperature coefficient of linear expansion

International Nuclear Information System (INIS)

Bashnin, Yu.A.; Shiryaeva, A.N.; Omel'chenko, A.V.

1982-01-01

Complex invar alloying with chromium, zirconium and nitrogen is conducted for increasing hardness and assuring low values of the temperature coefficient of linear expansion. It is shown that alloying with nitride-forming elements-chromium, zirconium and the following high-temperature saturation under high pressure with nitrogen provides the invar hardening at assuring a low temperature coefficient of linear expansion. Saturation with nitrogen under 100 MPa pressure at 1050 deg C during 3 hours permits to prepare an invar containing up to 0.2% N 2 uniformly distributed over the whole cross section of samples with 4 mm diameter. Nitrogen in invar alloys alloyed with chromium and zirconium affects the Curie point similarly to carbon and nickel shifting it towards higher temperatures, it slightly changes the value of the temperature coefficient of linear expansion and provides linear character of thermal expansion dependence on temperature in the +100 deg C - -180 deg C range

Nano- and Macro-wear of Bio-carbo-nitrided AISI 8620 Steel Surfaces

Science.gov (United States)

Arthur, Emmanuel Kwesi; Ampaw, Edward; Zebaze Kana, M. G.; Adetunji, A. R.; Olusunle, S. O. O.; Adewoye, O. O.; Soboyejo, W. O.

2015-12-01

This paper presents the results of an experimental study of nano- and macro-scale wear in a carbo-nitrided AISI 8620 steel. Carbo-nitriding is carried out using a novel method that involves the use of dried, cyanide-containing cassava leaves, as sources of carbon and nitrogen. These are used in a pack cementation that is used to diffuse carbon and nitrogen into case layers at intermediate temperatures [673.15 K, 723.15 K, 773.15 K, and 823.15 K (400 °C, 450 °C, 500 °C, and 550 °C)]. Nano- and macro-scale wear properties are studied in the case-hardened surfaces, using a combination of nano-scratch and pin-on-disk experiments. The measured wear volumes (at both nano- and macro-length scales) are shown to increase with decreasing pack cyaniding temperature. The nano- and macro-wear resistances are also shown to be enhanced by the in situ diffusion of carbon and nitrogen from cyanide-containing bio-processed waste. The underlying wear mechanisms are also elucidated via atomic force microscopy and scanning electron microscopy observations of the wear tracks. The implications of the results are discussed for the design of hardened carbo-nitrided steel surfaces with improved wear resistance.

The interaction between nitride uranium and stainless steel

Science.gov (United States)

Shornikov, D. P.; Nikitin, S. N.; Tarasov, B. A.; Baranov, V. G.; Yurlova, M. S.

2016-04-01

Uranium nitride is most popular nuclear fuel for Fast Breeder Reactor New Generation. In-pile experiments at reactor BOR-60 was shown an interaction between nitride fuel and stainless steel in the range of 8-11% burn up (HA). In order to investigate this interaction has been done diffusion tests of 200 h and has been shown that the reaction occurs in the temperature range 1000-1100 ° C. UN interacted with steel in case of high pollution oxygen (1000-2000 ppm). Also has been shown to increase interaction UN with EP-823 steel in the presence of cesium. In this case the interaction layer had a thickness about 2-3 μm. Has been shown minimal interaction with new ODS steel EP-450. The interaction layer had a thickness less then 2 μm. Did not reveal the influence of tellurium and iodine increased interaction. It was show compatibility at 1000 °C between UN and EP-450 ODS steel, chrome steel, alloying aluminium and silicium.

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Determination of aluminium nitride or free nitrogen in low carbon steel

International Nuclear Information System (INIS)

Guetaz, V.; Soler, M.; Massardier, V.; Merlin, J.; Ravaine, D.

2001-01-01

As the aluminium nitrides play an important role in the manufacturing of steel sheets, a specific methodology was developed based on the thermoelectric power (TEP) technique, in order to determine the AIN nitrogen by an indirect method. The free nitrogen was determined and then the AIN nitrogen was calculated by the difference between the total nitrogen and the free nitrogen. Indeed, it is easier to determine the dissolved nitrogen, the content of which gradually decreases during the AIN precipitation, than the AIN nitrogen. A low carbon aluminium killed steel was employed with 580 ppm of aluminium and 50 ppm of nitrogen. A comparison of the results obtained by TEP with those obtained by other techniques (hot hydrogen extraction, electrochemical dissolution followed by a mineralization, electrochemical dissolution followed by a sodic decomposition and the Beeghly method) was conducted, in order to determine a reliable technique likely to quantify the amount of aluminium nitrides in aluminium killed steels. With these techniques, it is possible to determine either free nitrogen or precipitated nitrogen. From an experimental point of view, the precipitation kinetics of AIN was followed during an annealing performed at 973 K (700 C) by TEP and then different precipitation states of AIN were investigated to compare the different techniques: three annealing states (when no nitrogen, half the nitrogen and the total nitrogen has precipitated) and two soaking states (1403 and 1523 K). Thus, it was possible to compare states where the AIN precipitates are in various forms (different shapes, crystallographic structures, sizes, distributions in the matrix). This work showed that the quantification by TEP, hot hydrogen extraction and electrochemical dissolution followed by a mineralization seem reliable whereas the Beeghly method gives good results only for the precipitates formed at high temperatures. In contrast, the quantification by electrochemical dissolution followed by

Critical fields of niobium nitride films of various granularity

International Nuclear Information System (INIS)

Antonova, E.A.; Sukhov, V.A.

1983-01-01

The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

Bonding silicon nitride using glass-ceramic

International Nuclear Information System (INIS)

Dobedoe, R.S.

1995-01-01

Silicon nitride has been successfully bonded to itself using magnesium-aluminosilicate glass and glass-ceramic. For some samples, bonding was achieved using a diffusion bonder, but in other instances, following an initial degassing hold, higher temperatures were used in a nitrogen atmosphere with no applied load. For diffusion bonding, a small applied pressure at a temperature below which crystallisation occurs resulted in intimate contact. At slightly higher temperatures, the extent of the reaction at the interface and the microstructure of the glass-ceramic joint was highly sensitive to the bonding temperature. Bonding in a nitrogen atmosphere resulted in a solution-reprecipitation reaction. A thin layer of glass produced a ''dry'', glass-free joint, whilst a thicker layer resulted in a continuous glassy join across the interface. The chromium silicide impurities within the silicon nitride react with the nucleating agent in the glass ceramic, which may lead to difficulty in producing a fine glass-ceramic microstructure. Slightly lower temperatures in nitrogen resulted in a polycrystalline join but the interfacial contact was poor. It is hoped that one of the bonds produced may be developed to eventually form part of a graded joint between silicon nitride and a high temperature nickel alloy. (orig.)

Catalytically-etched hexagonal boron nitride flakes and their surface activity

International Nuclear Information System (INIS)

Kim, Do-Hyun; Lee, Minwoo; Ye, Bora; Jang, Ho-Kyun; Kim, Gyu Tae; Lee, Dong-Jin; Kim, Eok-Soo; Kim, Hong Dae

2017-01-01

Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co_3O_4, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co_3O_4 and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Catalytically-etched hexagonal boron nitride flakes and their surface activity

Energy Technology Data Exchange (ETDEWEB)

Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

2017-04-30

Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

International Nuclear Information System (INIS)

Butt, Drryl P.; Jaques, Brian

2009-01-01

Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (U x , Dy 1-x )N (0.7 (le) X (le) 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

Energy Technology Data Exchange (ETDEWEB)

Drryl P. Butt; Brian Jaques

2009-03-31

Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (Ux, Dy1-x)N (0.7 ≤ X ≤ 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

Nitriding of AISI 4140 steel by a low energy broad ion source

International Nuclear Information System (INIS)

Ochoa, E. A.; Figueroa, C. A.; Alvarez, F.

2006-01-01

A comprehensive study of the thermochemical nitriding process of steel AISI 4140 by low energy ion implantation (Kaufmann cell) is reported. Different times of implantation were employed and the studied samples were characterized by x-ray diffraction, in situ photoemission electron spectroscopy, scanning electron microscopy, and hardness (nanoindentation) measurements. The linear relationship between nitrogen content and hardness was verified. The structure of the nitrided layer was characterized yielding that the compound layer is formed by coarse precipitates, around small grains, constituted principally by ε-Fe 2-3 N and γ-Fe 4 N phases and the diffusion zone is formed by fine precipitates, around big grains of the original martensitic phase, constituted principally by γ-Fe 4 N phase. Finally, a diffusion model for multiphase systems was applied to determine effective diffusion coefficients of nitrogen in the different phases

Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

International Nuclear Information System (INIS)

Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

2002-01-01

In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

Ion nitridation - physical and technological aspects

International Nuclear Information System (INIS)

Elbern, A.W.

1980-01-01

Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

Influence of the nitriding and TiAlN/TiN coating thickness in the mechanical properties of a duplex treated H13 steel

International Nuclear Information System (INIS)

Torres, Ricardo D.; Soares, Paulo; Suzuki, Luciane Y.; Lepienski, Carlos M.

2010-01-01

AISI H13 die steel substrates were low pressure gas nitrided in three different nitriding cases. In the nitriding case A, the surface hardness was around 12 GPa and the nitriding thickness was around 40 μm. In the nitriding case B, the hardness was the same as in case A, but the nitriding thickness was around 70 μm. Finally, in the nitriding case C, the nitriding thickness was the same as in case B, but hardness profile showed a different behavior. In case C, the surface hardness was the same as case A and B. But the hardness increases as one move away from the surface showing the highest hardness at 15 "m from the sample surface. The XRD results showed that the nitriding cases microstructure is composed mainly by the diffusion layer with small amount of Cr_2N precipitates. These nitrided samples were subsequently coated with TiAlN using cathodic arc evaporation in two thicknesses of 3 and 7 μm. These samples were characterized with respect to phase chemistry, adhesion, hardness, elastic modulus and scratch tests. The phase chemistry determined through XRD revealed that coating was mostly Ti_0_._7Al_0_._3N with some peaks of TiN which comes from the adhesion layer that was deposited prior to the deposition of TiAlN. The instrumented hardness performed in the coated samples showed that the coating system hardness changes with the nitriding cases when the coating thickness is 3 μm. On the other hand, the nitriding characteristics do not influence the coating hardness with thickness of 7 μm. In addition, the 7 μm thick coating is harder than the 3 μm thick coating. In the last part of this work, TiAlN was deposited in the AISI H13 substrate without nitriding; it was found that the hardness in this condition is higher than the nitrided/coated samples. The worn area, probed by the scratch test, was smaller for the TiAlN deposited over AISI H13 without the nitriding layer. (author)

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

2015-08-31

We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

International Nuclear Information System (INIS)

Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

2015-01-01

We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

Influence of Nitrided Layer on The Properties of Carbon Coatings Produced on X105CrMo17 Steel Under DC Glow-Discharge Conditions

Directory of Open Access Journals (Sweden)

Tomasz BOROWSKI

2016-09-01

Full Text Available In most cases, machine components, which come in contact with each other, are made of steel. Common steel types include 100Cr6 and X105CrMo17 are widely used in rolling bearings, which are subjected to high static loads. However, more and more sophisticated structural applications require increasingly better performance from steel. The most popular methods for improving the properties of steel is carburisation or nitriding. Unfortunately, when very high surface properties of steel are required, this treatment may be insufficient. Improvement of tribological properties can be achieved by increasing the hardness of the surface, reducing roughness or reducing the coefficient of friction. The formation of composite layers on steel, consisting of a hard nitride diffusion layer and an external carbon coating with a low coefficient of friction, seems to be a prospect with significant potential. The article describes composite layers produced on X105CrMo17 steel and defines their morphology, surface roughness and their functional properties such as: resistance to friction-induced wear, coefficient of friction and corrosion resistance. The layers have been formed at a temperature of 370°C in successive processes of: nitriding in low-temperature plasma followed by deposition of a carbon coating under DC glow-discharge conditions. An evaluation was also made of the impact of the nitrided layers on the properties and morphology of the carbon coatings formed by comparing them to coatings formed on non-nitrided X105CrMo17 steel substrates. A study of the surface topography, adhesion, resistance to friction-induced wear and corrosion shows the significant importance of the substrate type the carbon coatings are formed on.DOI: http://dx.doi.org/10.5755/j01.ms.22.3.7532

A study on surface properties and high temperature oxidation behavior of ion nitrided FC-25 gray cast iron

International Nuclear Information System (INIS)

Hur, In Chang; Son, Kun Su; Yoon, Jae Hong; Cho, Tong Yul; Park, Bong Gyu; Kim, Hyun Soo; Kim, In Soo

2005-01-01

Surface properties and high temperature oxidation behavior were investigated for FC-25 Gray Cast Iron(GCI) and the ion intrided GCI(N-GCI). The GCI was pre-cleaned to improve hardness to the optimum pre-sputtering parameters with an Ar/H 2 ratio of 1/2, working pressure of 3 torr, working temperature of 550 .deg. C and working time of 1hour. The optimum nitriding conditions for the maximum hardness of 560∼575 Hv were an N 2 /H 2 ratio of 3/1, working pressure of 3 torr, and working temperature of 575 deg. C. The thickness of graphite in the GCI was increased by increasing the working temperature from 525 .deg. C to 595 .deg. C for the nitriding time of 6∼18hrs. XRD patterns showed FeO and Fe 2 O 3 peaks for both the oxidized N-GCI and GCI at temperature of 600 .deg. C and 800 .deg. C under atmospheric environment for both 24 and 60hours. At 800 .deg. C, above the Fe 4 N decomposition temperature of 680 .deg. C, the oxidation rate of N-GCI was greater than that of the GCI. The most abundant nitride, Fe 4 N, was decomposed and the nitrogen gas given off by the decomposition made the protective film porous by degassing through the film. But at 600 .deg. C, below the decomposition temperature, the degree of oxidation of N-GCI was lower than that of the GCI because the nitride film worked as protective barrier for oxidation. Finite element modeling of elastic contact wear problems was performed to demonstrate the feasibility of applying the finite element method to fretting wear problems. The elastic beam problem, with existing solutions, is treated as a numerical example. By introducing a control parameter s, which scaled up the wear constant and scaled down the cycle numbers, the algorithm was shown to greatly reduce the time required for the analysis. The work rate model was adopted in the wear model. In the three-dimensional finite element analysis, a quarterly symmetric model was used to simulate cross tubes contacting at right angles. The wear constant of

Low-temperature infiltration identified using infrared thermography in patients with subcutaneous edema revealed ultrasonographically: A case report.

Science.gov (United States)

Oya, Maiko; Takahashi, Toshiaki; Tanabe, Hidenori; Oe, Makoto; Murayama, Ryoko; Yabunaka, Koichi; Matsui, Yuko; Sanada, Hiromi

Infiltration is a frequent complication of infusion therapy. We previously demonstrated the usefulness of infrared thermography as an objective method of detecting infiltration in healthy people. However, whether thermography can detect infiltration in clinical settings remains unknown. Therefore, we report two cases where thermography was useful in detecting infiltration at puncture sites. In both cases, tissue changes were verified ultrasonographically. The patients were a 56-year-old male with cholangitis and a 76-year-old female with hepatoma. In both cases, infiltration symptoms such as swelling and erythema occurred one day after the insertion of a peripheral intravenous catheter. Thermographic images from both patients revealed low-temperature areas spreading from the puncture sites; however, these changes were not observed in other patients. The temperature difference between the low-temperature areas and their surrounding skin surface exceeded 1.0°C. Concurrently, ultrasound images revealed that tissues surrounding the vein had a cobblestone appearance, indicating edema. In both patients, subcutaneous tissue changes suggested infiltration and both had low-temperature areas spreading from the puncture sites. Thus, subcutaneous edema may indicate infusion leakage, resulting in a decrease in the temperature of the associated skin surface. These cases suggest that infrared thermography is an effective method of objectively and noninvasively detecting infiltration.

Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

Directory of Open Access Journals (Sweden)

Patrick T. McCarthy

2017-07-01

Full Text Available This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs. Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and intercalation of carbon-based nanoscale emitters decreases work functions from approximately 4.6 eV to as low as 2.0 eV. In this study, boron nitride modifications of GPs were performed. Hexagonal boron nitride is a planar structure akin to graphene and has demonstrated useful chemical and electrical properties when embedded in graphitic layers. Photoemission induced by simulated solar excitation was employed to characterize the emitter electron energy distributions, and changes in the electron emission characteristics with respect to temperature identified annealing temperature limits. After several heating cycles, a single stable emission peak with work function of 2.8 eV was present for the intercalated GP sample up to 1,000 K. Up to 600 K, the potassium-intercalated boron nitride modified sample exhibited improved retention of potassium in the form of multiple emission peaks (1.8, 2.5, and 3.3 eV resulting in a large net electron emission relative to the unmodified graphitic sample. However, upon further heating to 1,000 K, the unmodified GP sample demonstrated better stability and higher emission current than the boron nitride modified sample. Both samples deintercalated above 1,000 K.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Microhardness and microplasticity of zirconium nitride

International Nuclear Information System (INIS)

Neshpor, V.S.; Eron'yan, M.A.; Petrov, A.N.; Kravchik, A.E.

1978-01-01

To experimentally check the concentration dependence of microhardness of 4 group nitrides, microhardness of zirconium nitride compact samples was measured. The samples were obtained either by bulk saturation of zirconium iodide plates or by chemical precipitation from gas. As nitrogen content decreased within the limits of homogeneity of zirconium nitride samples where the concentration of admixed oxygen was low, the microhardness grew from 1500+-100 kg/mm 2 for ZrNsub(1.0) to 27000+-100 kg/mm 2 for ZrNsub(0.78). Microplasticity of zirconium nitride (resistance to fracture) decreased, as the concentration of nitrogen vacancies was growing

Method to grow group III-nitrides on copper using passivation layers

Science.gov (United States)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

2014-06-03

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Preparation and properties of hexagonal boron nitride fibers used as high temperature membrane filter

Energy Technology Data Exchange (ETDEWEB)

Hou, Xinmei, E-mail: houxinmei@ustb.edu.cn; Yu, Ziyou; Li, Yang; Chou, Kuo-Chih

2014-01-01

Graphical abstract: - Highlights: • h-BN fibers were successfully fabricated using H{sub 3}BO{sub 3} and C{sub 3}H{sub 6}N{sub 6} as raw materials. • The obtained BN fibers were polycrystalline and uniform in morphology. • It exhibited good oxidation resistance and low thermal expansion coefficient. - Abstract: Hexagonal boron nitride fibers were synthesized via polymeric precursor method using boric acid (H{sub 3}BO{sub 3}) and melamine (C{sub 3}H{sub 6}N{sub 6}) as raw materials. The precursor fibers were synthesized by water bath and BN fibers were prepared from the precursor at 1873 K for 3 h in flowing nitrogen atmosphere. The crystalline phase and microstructures of BN fibers were examined by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy. The results showed that h-BN fibers with uniform morphology were successfully fabricated. The well-synthesized BN fibers were polycrystalline with 0.4–1.5 μm in diameter and 200–500 μm in length. The as-prepared samples exhibited good oxidation resistance and low thermal expansion coefficient at high temperature.

Hydrogen diffusion between plasma-deposited silicon nitride-polyimide polymer interfaces

International Nuclear Information System (INIS)

Nguyen, S.V.; Kerbaugh, M.

1988-01-01

This paper reports a nuclear reaction analysis (NRA) for hydrogen technique used to analyze the hydrogen concentration near plasma enhanced chemical vapor deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + O 2 (8% O 2 ) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate

Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization

International Nuclear Information System (INIS)

Patil, Suraj Kumar; Celik-Butler, Zeynep; Butler, Donald P.

2010-01-01

A low-temperature deposition process employing aluminum-induced crystallization has been developed for fabrication of piezoresistive polycrystalline silicon (polysilicon) films on low cost and flexible polyimide substrates for force and pressure sensing applications. To test the piezoresistive properties of the polysilicon films, prototype pressure sensors were fabricated on surface-micromachined silicon nitride (Si 3 N 4 ) diaphragms, in a half-Wheatstone bridge configuration. Characterization of the pressure sensor was performed using atomic force microscope in contact mode with a specially modified probe-tip. Low pressure values ranging from 5 kPa to 45 kPa were achieved by this method. The resistance change was found to be - 0.1% to 0.5% and 0.07% to 0.3% for polysilicon films obtained at 500 o C and 400 o C, respectively, for the applied pressure range.

Compressive creep of silicon nitride

International Nuclear Information System (INIS)

Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

1990-01-01

Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

Energy Technology Data Exchange (ETDEWEB)

Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

2016-07-01

In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

Science.gov (United States)

Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

2018-04-04

Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

International Nuclear Information System (INIS)

Kutsuki, Katsuhiro; Okamoto, Gaku; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2007-01-01

We have investigated the stability of amorphous germanium nitride (Ge 3 N 4 ) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge 3 N 4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO 2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO 2 islands on the surfaces. These findings indicate that although Ge 3 N 4 layers have superior thermal stability compared to the GeO 2 layers, Ge 3 N 4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge 3 N 4 insulator or passivation layers

Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy

International Nuclear Information System (INIS)

Dogra, R; Shrestha, S K; Byrne, A P; Ridgway, M C; Edge, A V J; Vianden, R; Penner, J; Timmers, H

2005-01-01

The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the 111 In/Cd radioisotope probe. The probe was introduced during sample synthesis, by diffusion and by ion implantation. The mean quadrupole interaction frequency ν Q = 28 MHz was observed at the indium probe site in all types of indium nitride samples with broad frequency distributions. The observed small, but non-zero, asymmetry parameter indicates broken symmetry around the probe atoms. Results have been compared with theoretical calculations based on the point charge model. The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale. Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

Science.gov (United States)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

Nitridation of porous GaAs by an ECR ammonia plasma

International Nuclear Information System (INIS)

Naddaf, M; Hullavarad, S S; Ganesan, V; Bhoraskar, S V

2006-01-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy

Nitridation of porous GaAs by an ECR ammonia plasma

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India); Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic); Hullavarad, S S [Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742 (United States); Ganesan, V [Inter University Consortium, Indore (India); Bhoraskar, S V [Center for Advanced Studies in Material Science and Solid State Physics, University of Pune, Pune 411 007 (India)

2006-02-15

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 deg. C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 deg. C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Nitridation of porous GaAs by an ECR ammonia plasma

Science.gov (United States)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

Energy Technology Data Exchange (ETDEWEB)

Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

2012-06-01

Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

NARCIS (Netherlands)

van Assche, F. J. H.; Unnikrishnan, S.; Michels, J. J.; van Mol, A. M. B.; van de Weijer, P.; M. C. M. van de Sanden,; Creatore, M.

2014-01-01

We report on a low substrate temperature (110 °C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic

Magnesium doping of boron nitride nanotubes

Science.gov (United States)

Legg, Robert; Jordan, Kevin

2015-06-16

A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

Large quantity production of carbon and boron nitride nanotubes by mechano-thermal process

International Nuclear Information System (INIS)

Chen, Y.; Fitzgerald, J.D.; Chadderton, L.; Williams, J.S.; Campbell, S.J.

2002-01-01

Full text: Nanotube materials including carbon and boron nitride have excellent properties compared with bulk materials. The seamless graphene cylinders with a high length to diameter ratio make them as superstrong fibers. A high amount of hydrogen can be stored into nanotubes as future clean fuel source. Theses applications require large quantity of nanotubes materials. However, nanotube production in large quantity, fully controlled quality and low costs remains challenges for most popular synthesis methods such as arc discharge, laser heating and catalytic chemical decomposition. Discovery of new synthesis methods is still crucial for future industrial application. The new low-temperature mechano-thermal process discovered by the current author provides an opportunity to develop a commercial method for bulk production. This mechano-thermal process consists of a mechanical ball milling and a thermal annealing processes. Using this method, both carbon and boron nitride nanotubes were produced. I will present the mechano-thermal method as the new bulk production technique in the conference. The lecture will summarise main results obtained. In the case of carbon nanotubes, different nanosized structures including multi-walled nanotubes, nanocells, and nanoparticles have been produced in a graphite sample using a mechano-thermal process, consisting of I mechanical milling at room temperature for up to 150 hours and subsequent thermal annealing at 1400 deg C. Metal particles have played an important catalytic effect on the formation of different tubular structures. While defect structure of the milled graphite appears to be responsible for the formation of small tubes. It is found that the mechanical treatment of graphite powder produces a disordered and microporous structure, which provides nucleation sites for nanotubes as well as free carbon atoms. Multiwalled carbon nanotubes appear to grow via growth of the (002) layers during thermal annealing. In the case of BN

High temperature measurements of the microwave dielectric properties of ceramics

International Nuclear Information System (INIS)

Baeraky, T.A.

1999-06-01

Equipment has been developed for the measurement of dielectric properties at high temperature from 25 to 1700 deg. C in the microwave frequency range 614.97 to 3620.66 MHz using the cavity perturbation technique, to measure the permittivity of a range of ceramic materials. The complex permittivities of the standard materials, water and methanol, were measured at low temperature and compared with the other published data. A statistical analysis was made for the permittivity measurements of water and methanol using sample holders of different diameter. Also the measurements of these materials were used to compare the simple perturbation equation with its modifications and alternation correction methods for sample shape and the holes at the two endplates of the cavity. The dielectric properties of solid materials were investigated from the permittivity measurements on powder materials, shown in table 4.7, using the dielectric mixture equations. Two kinds of ceramics, oxide and nitrides, were selected for the high temperature dielectric measurements in microwave frequency ranges. Pure zirconia, yttria-stabilised zirconia, and Magnesia-stabilised zirconia are the oxide ceramics while aluminium nitride and silicon nitride are the nitride ceramics. A phase transformation from monoclinic to tetragonal was observed in pure zirconia in terms of the complex permittivity measurements, and the conduction mechanism in three regions of temperature was suggested to be ionic in the first region and a mixture of ionic and electronic in the second. The phase transition disappeared with yttria-stabilised zirconia but it was observed with magnesia-stabilised zirconia. Yttria doped zirconia was fully stabilised while magnesia stabilised was partially stabilised zirconia. The dielectric property measurements of aluminium nitride indicated that there is a transition from AIN to AlON, which suggested that the external layer of the AIN which was exposed to the air, contains alumina. It was

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

Science.gov (United States)

Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

2016-12-01

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

UN2−x layer formed on uranium metal by glow plasma nitriding

International Nuclear Information System (INIS)

Long, Zhong; Hu, Yin; Chen, Lin; Luo, Lizhu; Liu, Kezhao; Lai, Xinchun

2015-01-01

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN 2−x . • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN 2−x . TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

Science.gov (United States)

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Polarity Control in Group-III Nitrides beyond Pragmatism

Science.gov (United States)

Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

2016-05-01

Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

Wear behaviour of nitrogen-implanted and nitrided Ti-6Al-4V alloy

International Nuclear Information System (INIS)

Martinella, R.; Giovanardi, S.; Chevallard, G.; Villani, M.; Molinari, A.; Tosello, C.

1985-01-01

The comparison between the wear behaviour of nitrogen-implanted Ti-6Al-4V alloy and that of nitrided Ti-6Al-4V alloy is reported. Both treatments were carried out at temperatures from 573 to 973 K on lapped surfaces; in order to compare roughness effects, nitriding was also carried out on rougher samples. An improvement in wear resistance for lapped surfaces was noted after implantation at 573 K or higher temperatures and after nitriding at temperatures over 773 K only; however, at 873 K, nitriding was more effective than implantation. Rough nitrided surfaces showed better wear resistance than lapped nitrided surfaces or lapped implanted surfaces. Most probably the improvement in wear resistance on implanted samples is due to a reduction in friction induced by chemical modification of the surface as a result of oxide and TiN. Scanning electron microscopy observations which show subsurface voids and coalescence are in good agreement with a wear model previously reported. As implantation preserves the surface finish, a possible application is suggested. (Auth.)

Reaction-bonded silicon nitride

International Nuclear Information System (INIS)

Porz, F.

1982-10-01

Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 1500 0 C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE) [de

Predicting Microstructure Development During HighTemperature Nitriding of Martensitic Stainless SteelsUsing Thermodynamic Modeling

Directory of Open Access Journals (Sweden)

Tschiptschin André Paulo

2002-01-01

Full Text Available Thermodynamic calculations of the Fe-Cr-N System in the region of the Gas Phase Equilibria have been compared with experimental results of maximum nitrogen absorption during nitriding of two Martensitic Stainless Steels (a 6 mm thick sheet of AISI 410S steel and green powder compacts of AISI 434L steel under N2 atmospheres. The calculations have been performed combining the Fe-Cr-N System description contained in the SGTE Solid Solution Database and the gas phase for the N System contained in the SGTE Substances Database. Results show a rather good agreement for total nitrogen absorption in the steel and nitrogen solubility in austenite in the range of temperatures between 1273 K and 1473 K and in the range of pressures between 0.1 and 0.36 MPa. Calculations show that an appropriate choice of heat treatment parameters can lead to optimal nitrogen absorption in the alloy. It was observed in the calculations that an increased pressure stabilizes CrN at expenses of Cr2N - type nitrides.

Nitriding behavior of Ni and Ni-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Fonovic, Matej

2015-01-15

Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and

Tribocorrosion studies of metallic biomaterials: The effect of plasma nitriding and DLC surface modifications.

Science.gov (United States)

Zhao, Guo-Hua; Aune, Ragnhild E; Espallargas, Nuria

2016-10-01

The medical grade pure titanium, stainless steel and CoCrMo alloy have been utilized as biomaterials for load-bearing orthopedic prosthesis. The conventional surgery metals suffer from a combined effect of wear and corrosion once they are implanted, which may significantly accelerate the material degradation process. In this work, the tribocorrosion performance of the metallic biomaterials with different surface modifications was studied in the simulated body fluid for the purpose of investigating the effect of the surface treatments on the tribocorrosion performance and eventually finding the most suitable implantation materials. The metals were subjected to surface modifications by plasma nitriding in different treatment temperatures or physical vapor deposition (PVD) to produce diamond-like carbon (DLC) coating, respectively. The dry wear and tribocorrosion properties of the samples were evaluated by using a reciprocating ball-on-disc tribometer equipped with an electrochemical cell. Prior to the tribocorrosion tests, their electrochemical behavior was measured by the potentiodynamic polarization in phosphate buffer saline (PBS) solution at room temperature. Both stainless steel and CoCrMo after low temperature nitriding kept their passive nature by forming an expanded austenite phase. The DLC coated samples presented the low anodic corrosion current due to the chemical inertness of the carbon layer. During the tribocorrosion tests at open circuit potential, the untreated and low temperature nitrided samples exhibited significant potential drop towards the cathodic direction, which was a result of the worn out of the passive film. Galvanic coupling was established between the depassivated (worn) area and the still passive (unworn) area, making the materials suffered from wear-accelerated corrosion. The DLC coating performed as a solid lubricant in both dry wear and tribocorrosion tests, and the resulting wear after the tests was almost negligible. Copyright �

Manufacturing technology development of plasma/ion nitriding for improvement of hardness of machine components and tools

International Nuclear Information System (INIS)

Suprapto; Tjipto Sujitno; Saminto

2015-01-01

The manufacturing technology development of plasma/ion nitriding to improve of hardness of machine components and tools has been done. The development of this technology aims to improve device performance plasma nitriding double chamber and conducted with the addition of thermal radiation shield. Testing was done by testing for preheating operation (start-up), test operation for conditions nitriding and test for nitriding process. The results show that: the plasma nitriding device can be operated for nitriding process at the temperature of about 500 °C for 6 hours, using the thermal radiation shield obtained outside wall temperature of about 65 °C and shorten start-up time to about 60 minutes. The use of thermal radiation shield can also improve the efficiency of the electric power supply and increase the operating temperature for nitriding process. Test for nitriding obtained increase of hardness 1.33 times for the original camshaft (genuine parts) and 1.8 times for the imitation camshaft (imitation parts), the results are compared with after the tempering process at a temperature of 600 °C. For sample SS 304 was 2.45 times compared with before nitrided These results indicate that the development of manufacturing technology of plasma/ion nitriding to increase hardness of machine components and tools have been successfully able to increase the hardness, although still need to be optimized. Besides that, these devices can be developed to use for the process of carburizing and carbonitriding. (author)

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Physical vapor deposition of cubic boron nitride thin films

International Nuclear Information System (INIS)

Kester, D.J.

1991-01-01

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

UN{sub 2−x} layer formed on uranium metal by glow plasma nitriding

Energy Technology Data Exchange (ETDEWEB)

Long, Zhong [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Hu, Yin [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Chen, Lin [China Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621907 (China); Luo, Lizhu [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Liu, Kezhao, E-mail: liukz@hotmail.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China); Lai, Xinchun, E-mail: lai319@yahoo.com [Science and Technology on Surface Physics and Chemistry Laboratory, P.O. Box 718-35, Mianyang 621907 (China)

2015-01-25

Highlights: • We used a very simple method to prepare nitride layer on uranium metal surface. • This modified layer is nitrogen-rich nitride, which should be written as UN{sub 2−x}. • TEM images show the nitride layer is composed of nano-sized grains. • XPS analysis indicates there is uranium with abnormal low valence in the nitride. - Abstract: Glow plasma nitriding is a simple and economical surface treatment method, and this technology was used to prepare nitride layer on the surface of uranium metal with thickness of several microns. The composition and structure of the nitride layer were analyzed by AES and XRD, indicating that this modified layer is nitrogen-rich uranium nitride, which should be written as UN{sub 2−x}. TEM images show the nitride layer is composed of nano-sized grains, with compact structure. And XPS analysis indicates there is uranium with abnormal low valence existing in the nitride. After the treated uranium storage in air for a long time, oxygen just entered the surface several nanometers, showing the nitride layer has excellent oxidation resistance. The mechanism of nitride layer formation and low valence uranium appearance is discussed.

Microstructure and local texture evolution by plasma nitriding in a 316L austenitic stainless steel and consequences on its fatigue durability

International Nuclear Information System (INIS)

Stinville, Jean-Charles

2010-01-01

The present study concerns the surface and mechanical properties induced by specific low temperature (∼400 C) plasma nitriding of an AISI 316L austenitic stainless steel largely used for structural component in nuclear and chemical industries. It focuses especially on its influence on the fatigue durability. The great advantages of this plasma nitriding process are to produce thick nitrided layers with a high concentration of nitrogen atoms in solid solution into the material and to preserve the stainless character of the substrate. As a consequence a new phase named expanded austenite or γ N phase is formed and the lattice expansion associated with the high supersaturation of interstitial nitrogen atoms results in residual compressive stresses at the surface that exceed 2 GPa. The surface is then strongly modified as a result of complex effects including some crystallographic plane rotation, plasticity and damage in some grains depending on their orientation. The considerable increase of hardness and wear resistance produced by plasma nitriding of austenitic stainless steels is now well documented but there are practically no data on the influence on fatigue properties. Series of fatigue tests in air at room temperature carried out in the low cycle fatigue range show a significant improvement of the fatigue life. The results are discussed especially taking into account the compressive residual stresses induced by the nitrided layer. (authors)

Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

Science.gov (United States)

Brady, Michael P [Oak Ridge, TN; Yang, Bing [Oak Ridge, TN; Maziasz, Philip J [Oak Ridge, TN

2010-11-09

A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Science.gov (United States)

Wolf, Steven; Edmonds, Mary; Sardashti, Kasra; Clemons, Max; Park, Jun Hong; Yoshida, Naomi; Dong, Lin; Nemani, Srinivas; Yieh, Ellie; Holmes, Russell; Alvarez, Daniel; Kummel, Andrew C.

2018-05-01

Low-temperature sequential exposures of N2H4 and BCl3 have been performed on Si0.3Ge0.7(001), Cu, and HOPG surfaces at 350 °C. A novel BN ALD process has been achieved on Si0.3Ge0.7(001) with 60 cycles of BN ALD producing a uniform, pinhole-free thin film with low contamination, as characterized with XPS and AFM. On Cu and Si0.3Ge0.7(001), XPS spectra indicated a near stoichiometric BN film. While AFM imaging indicated the deposition on Cu yielded nanometer-scale etching, conformal deposition was observed on Si0.3Ge0.7(001). The BN ALD also nucleated on inert HOPG via step edges. In situ STM imaging showed that cyclic exposures at 350 °C were able to decorate step edges with features ∼2 nm tall and ∼200 nm wide, indicating the propensity for BN to grow in the planar direction. The N2H4 and BCl3 ALD allows for the deposition of low oxygen, low carbon films, but to avoid etching, the growth should be nucleated by N2H4, since exposure to BCl3 can result in the formation of volatile Cl-containing surface species on many substrates. Therefore, the formation of a stable surface nitride prior to BCl3 exposure is necessary to prevent formation and desorption of volatile species from the substrate.

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

Energy Technology Data Exchange (ETDEWEB)

Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

2017-05-12

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

Enhancing the Hardness of Sintered SS 17-4PH Using Nitriding Process for Bracket Orthodontic Application

Science.gov (United States)

Suharno, B.; Supriadi, S.; Ayuningtyas, S. T.; Widjaya, T.; Baek, E. R.

2018-01-01

Brackets orthodontic create teeth movement by applying force from wire to bracket then transferred to teeth. However, emergence of friction between brackets and wires reduces load for teeth movement towards desired area. In order to overcome these problem, surface treatment like nitriding chosen as a process which could escalate efficiency of transferred force by improving material hardness since hard materials have low friction levels. This work investigated nitriding treatment to form nitride layer which affecting hardness of sintered SS 17-4PH. The nitride layers produced after nitriding process at various temperature i.e. 470°C, 500°C, 530°C with 8hr holding time under 50% NH3 atmosphere. Optical metallography was conducted to compare microstructure of base and surface metal while the increasing of surface hardness then observed using vickers microhardness tester. Hardened surface layer was obtained after gaseous nitriding process because of nitride layer that contains Fe4N, CrN and Fe-αN formed. Hardness layers can achieved value 1051 HV associated with varies thickness from 53 to 119 μm. The presence of a precipitation process occurring in conjunction with nitriding process can lead to a decrease in hardness due to nitrogen content diminishing in solid solution phase. This problem causes weakening of nitrogen expansion in martensite lattice.

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

International Nuclear Information System (INIS)

Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

2015-01-01

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

Case study of low-temperature heating in an existing single-family house-A test of methods for simulation of heating system temperatures

DEFF Research Database (Denmark)

Østergaard, Dorte Skaarup; Svendsen, Svend

2016-01-01

and the calculated indoor temperatures and radiator return temperatures were compared to temperatures measured in the case house. The results showed that the detail of the simulation model has a large influence on the results obtained. The estimated return temperatures from the radiators varied by up to 16 degrees C...... depending on the assumptions made in the simulation model. The results indicated that a detailed building simulation model can provide a good estimate of the actual heating system operation, provided that actual radiators and realistic indoor temperatures are taken into account in the model. (C) 2016......Low-temperature heating provides an efficient way of heating our buildings. To obtain a high efficiency it is important that the heating systems in the buildings are operated with both low supply and return temperatures. This study set out to investigate how typical assumptions in the modelling...

Mechanical properties of molybdenum-titanium alloys micro-structurally controlled by multi-step internal nitriding

International Nuclear Information System (INIS)

Nagae, M.; Yoshio, T.; Takemoto, Y.; Takada, J.; Hiraoka, Y.

2001-01-01

Internally nitrided dilute Mo-Ti alloys having a heavily deformed microstructure near the specimen surface were prepared by a novel two-step nitriding process at 1173 to 1773 K in N 2 gas. For the nitrided specimens three-point bend tests were performed at temperatures from 77 to 298 K in order to investigate the effect of microstructure control by internal nitriding on the ductile-to-brittle transition temperature (DBTT) of the alloy Yield strength obtained at 243 K of the specimen maintaining the deformed microstructure by the two-step nitriding was about 1.7 times as much as recrystallized specimen. The specimen subjected to the two-step nitriding was bent more than 90 degree at 243 K, whereas recrystallized specimen was fractured after showing a slight ductility at 243 K. DBTT of the specimen subjected to the two-step nitriding and recrystallized specimen was about 153 K and 203 K, respectively. These results indicate that multi-step internal nitriding is very effective to the improvement in the embrittlement by the recrystallization of molybdenum alloys. (author)

Synthesis of Uranium nitride powders using metal uranium powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

2012-01-01

Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

Residual Stress Induced by Nitriding and Nitrocarburizing

DEFF Research Database (Denmark)

Somers, Marcel A.J.

2005-01-01

The present chapter is devoted to the various mechanisms involved in the buildup and relief of residual stress in nitrided and nitrocarburized cases. The work presented is an overview of model studies on iron and iron-based alloys. Subdivision is made between the compound (or white) layer......, developing at the surfce and consisting of iron-based (carbo)nitrides, and the diffusion zone underneath, consisting of iron and alloying element nitrides dispersed in af ferritic matrix. Microstructural features are related directly to the origins of stress buildup and stres relief....

The study of tribological and corrosion behavior of plasma nitrided 34CrNiMo6 steel under hot and cold wall conditions

International Nuclear Information System (INIS)

Maniee, A.; Mahboubi, F.; Soleimani, R.

2014-01-01

Highlights: • 34CrNiMo6 steel was plasma nitrided under hot and cold wall conditions. • The amount of ε phase in hot wall condition was more than that of cold wall condition. • Wear resistance of hot wall nitrided samples was more than cold wall treated ones. • Hot wall nitriding provides better corrosion behavior than cold wall nitriding. - Abstract: This paper reports on a comparative study of tribological and corrosion behavior of plasma nitrided 34CrNiMo6 low alloy steel under modern hot wall condition and conventional cold wall condition. Plasma nitriding was carried out at 500 °C and 550 °C with a 25% N 2 + 75% H 2 gas mixture for 8 h. The wall temperature of the chamber in hot wall condition was set to 400 °C. The treated specimens were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), microhardness and surface roughness techniques. The wear test was performed by pin-on-disc method. Potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) tests were also used to evaluate the corrosion resistance of the samples. The results demonstrated that in both nitriding conditions, wear and corrosion resistance of the treated samples decrease with increasing temperature from 500 °C to 550 °C. Moreover, nitriding under hot wall condition at the same temperature provided slightly better tribological and corrosion behavior in comparison with cold wall condition. In consequence, the lowest friction coefficient, and highest wear and corrosion resistance were found on the sample treated under hot wall condition at 500 °C, which had the maximum surface hardness and ε-Fe 2–3 N phase

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Young's modulus and fracture toughness of silicon nitride ceramics at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Rouxel, T. [Rennes Univ. (France). Lab. de Recherche en Mecanique Applicee

2002-07-01

The temperature dependencies of Young's modulus (E) and fracture toughness (K{sub 1c}) of several silicon nitride-based monolithic and composite materials, are reviewed. A transition range is observed between 1130 and 1180 C on the E(T) curves, which is systematically 150 to 200 C above the T{sub g} of oxynitride glasses of composition close to that of the intergranular glassy pockets. It is thus supposed that this transition reflects the behaviour of the interfacial glassy films. The higher the glassy phase content, the higher is the temperature sensitivity. The presence of SiC particles greatly attenuates the sensitivity. Thus, Young's modulus decreases more slowly with temperature and fracture toughness changes little up to 1300 C. The K{sub 1c} (T) curves exhibit four different stages which are discussed and interpreted on the basis of a theoretical model. (orig.)

On the photon annealing of silicon-implanted gallium-nitride layers

International Nuclear Information System (INIS)

Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

2016-01-01

The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

Sixfold ring clustering in sp2-dominated carbon and carbon nitride thin films: A Raman spectroscopy study

International Nuclear Information System (INIS)

Abrasonis, G.; Gago, R.; Vinnichenko, M.; Kreissig, U.; Kolitsch, A.; Moeller, W.

2006-01-01

The atomic arrangement in sp 2 -dominated carbon (C) and carbon nitride (CN x ) thin films has been studied by Raman spectroscopy as a function of substrate temperature and, in the case of CN x , different N incorporation routes (growth methods). In this way, materials composing graphitelike, fullerenelike (FL), and paracyanogenlike structures have been compared. The results show that each type of arrangement results in a characteristic set of the Raman spectra parameters, which describe the degree of aromatic clustering, bond length, and angle distortion and order in sixfold structures. In the case of C films, the atomic structure evolves with substrate temperature from a disordered network to nanocrystalline planar graphitic configurations, with a progressive promotion in size and ordering of sixfold ring clusters. Nitrogen incorporation favors the promotion of sixfold rings in highly disordered networks produced at low temperatures, but precludes the formation of extended graphiticlike clusters at elevated substrate temperatures (>700 K). In the latter case, N introduces a high degree of disorder in sixfold ring clusters and enhances the formation of a FL microstructure. The formation and growth of aromatic clusters are discussed in terms of substrate temperature, N incorporation, growth rate, film-forming sources, and concurrent bombardment by hyperthermal particles during growth

The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

International Nuclear Information System (INIS)

Mitchell, D.R.G.; Stott, F.H.

1992-01-01

A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

Synthesis of hexagonal boron nitride graphene-like few layers

Science.gov (United States)

Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

2014-06-01

Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

International Nuclear Information System (INIS)

Dante, Roberto C.; Sánchez-Arévalo, Francisco M.; Chamorro-Posada, Pedro; Vázquez-Cabo, José; Huerta, Lazaro; Lartundo-Rojas, Luis; Santoyo-Salazar, Jaime

2015-01-01

The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures

Supramolecular intermediates in the synthesis of polymeric carbon nitride from melamine cyanurate

Energy Technology Data Exchange (ETDEWEB)

Dante, Roberto C., E-mail: rcdante@yahoo.com [Facultad de Mecánica, Escuela Politécnica Nacional (EPN), Ladrón de Guevara E11-253, Quito (Ecuador); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Huerta, Lazaro [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de Mexico, Apdo. Postal 70-360, Cd. Universitaria, Mexico D.F. 04510 (Mexico); Lartundo-Rojas, Luis [Centro de Nanociencias y Micro y Nanotecnologías—IPN, Luis Enrique Erro s/n, U. Prof. Adolfo López Mateos, 07738 Ciudad de Mexico, Distrito Federal (Mexico); Santoyo-Salazar, Jaime [Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07360 (Mexico); and others

2015-03-15

The adduct of melamine and cyanuric acid (MCA) was used in past research to produce polymeric carbon nitride and precursors. The reaction yield was considerably incremented by the addition of sulfuric acid. The polymeric carbon nitride formation occurs around 450 °C at temperatures above the sublimation of the adduct components, which occurs around 400 °C. In this report the effect of sulfuric acid on MCA was investigated. It was found that the MCA rosette supramolecular channel structures behave as a solid solvent able to host small molecules, such as sulfuric acid, inside these channels and interact with them. Therefore, the sulfuric acid effect was found to be close to that of a solute that causes a temperature increment of the “solvent sublimation” enough to allowing the formation of polymeric carbon nitride to occur. Sulfate ions are presumably hosted in the rosette channels of MCA as shown by simulations. - Graphical abstract: The blend of melamine cyanurate and sulfuric acid behaves like a solution so that melamine cyanurate decomposition is shifted to temperatures high enough to react and form polymeric carbon nitride. - Highlights: • The adduct of melamine and cyanuric acid behaves as a solid solvent. • The blend of sulfuric acid and melamine cyanurate behaves like a solution. • Melamine cyanurate decomposition is shifted to higher temperatures by sulfuric acid. • The formation of polymeric carbon nitride occurs for these higher temperatures.

Phonon dispersion relation of uranium nitride above and below the Neel temperature

International Nuclear Information System (INIS)

Dolling, G.; Holden, T.M.; Svensson, E.C.; Buyers, W.J.L.; Lander, G.H.

1977-01-01

Neutron coherent inelastic scattering measurements have been made of the phonon dispersion relation of uranium nitride both above and below the Neel temperature T N = 50 K. Within the precision of the measurements, about 1% in frequency and 10% in line width and in scattered neutron intensity, no significant changes in these phonon properties were observed as a function of temperature other than those arising from population factor changes and a small stiffening of the lattice as the temperature decreases. At 4.2 K, two acoustic and two optic branches have been determined for each of the [001], [110] and [111] directions. The optic mode measurements revealed (a) a 20% variation in frequency across the Brillouin zone and (b) and interesting disposition of the LO and TO modes, such that ν LO > ν TO along [001] and [11-], while the reverse is true along the [111] directions. Within the experimental resolution, the LO and TO modes are degenerate near q = 0. We have been unable to obtain any satisfactory description of these results on the basis of conventional theoretical treatments (e.g. rigid-ion or shell models). Other possible interpretations of the results are discussed. (author)

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

2008-01-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Energy Technology Data Exchange (ETDEWEB)

R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

2008-05-01

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

Molecular dynamics studies of actinide nitrides

International Nuclear Information System (INIS)

Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke; Minato, Kazuo

2004-01-01

The molecular dynamics (MD) calculation was performed for actinide nitrides (UN, NpN, and PuN) in the temperature range from 300 to 2800 K to evaluate the physical properties viz., the lattice parameter, thermal expansion coefficient, compressibility, and heat capacity. The Morse-type potential function added to the Busing-Ida type potential was employed for the ionic interactions. The interatomic potential parameters were determined by fitting to the experimental data of the lattice parameter. The usefulness and applicability of the MD method to evaluate the physical properties of actinide nitrides were studied. (author)

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2015-09-15

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2�

Innovative boron nitride-doped propellants

Directory of Open Access Journals (Sweden)

Thelma Manning

2016-04-01

Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

Enhanced electrical conductivity in graphene and boron nitride nanoribbons in large electric fields

Science.gov (United States)

Chegel, Raad

2018-02-01

Based on data of density function theory (DFT) as the input of tight binding model, the electrical conductivity (σ(T)) of graphene nanoribbos (GNRs) and Boron Nitride nanoribbos (BNNRs) under external electric fields with different wide are studied using the Green's function method. The BNNRs are wide band gap semiconductor and they are turned into metal depending on their electric field strength. The σ(T) shows increasing in low temperature region and after reaching the maximum value, it will decrease in high temperature region. In lower temperature ranges, the electrical conductivity of the GNRs is greater than that of the BNNRs. In a low temperature region, the σ(T) of GNRs increases linearly with temperature unlike the BNNRs. The electrical conductivity are strongly dependent on the electric field strength.

Magnetic properties of Nd3(Fe,Mo)29 compound and its nitride

International Nuclear Information System (INIS)

Pan Hongge

1998-01-01

The iron-rich ternary intermetallic compound Nd 3 (Fe,Mo) 29 with the Nd 3 (Fe,Ti) 29 -type monoclinic structure and its nitride were prepared. After nitrogenation, the nitride retains the structure of the parent compound, but the unit-cell volume of the nitride is 5.9% greater than that of the parent compound. The Curie temperature of Nd 3 (Fe,Mo) 29 nitride is 70.9% higher than that of the parent compound and the saturation magnetization of the nitride is about 6.6% (at 4.2 K) and 23.7% (at 300 K) higher than that of the parent compound. The anisotropy of the nitride is similar to that of parent compound, which exhibits plane anisotropy. (orig.)

Physical and Tribological Properties of Nitrided AISI 316 Stainless Steel Balls

Directory of Open Access Journals (Sweden)

Yang Shicai

2016-01-01

Full Text Available AISI 316 austenitic stainless steel balls (diameters 5.0 and 12.0 mm, typical hardness 250 HV0.3 and flat samples (20×20×2.0 mm were nitrided by a pulsed glow discharge Ar/N2 plasma. Hardness of the ball surfaces was analysed using Vickers indentation. Thermal stability of the nitrided balls (diameter 12.0 mm was studied using a furnace to heat them in air for 8 hours at temperatures up to 700.0°C and then, after cooling to room temperature, the surface hardness of the heated balls was re-measured. Scanning electron microscopy and X-ray diffraction were used to study the microstructures, composition and phase formation of the nitrided sublayers. Unlubricated pin-on-disc wear testing was used to evaluate the wear resistance of nitrided stainless steel balls (5.0 mm diameter and the results were compared with similar testing on hardened Cr-Steel balls (5 mm diameter with hardness of about 650 HV0.3. All the test results indicated that the nitrided AISI 316 austenitic stainless steel balls have advantages over the hardened Cr-Steel balls in terms of retaining high hardness after heat treatment and high resistance to sliding wear at room temperature under higher counterpart stress. These properties are expected to be beneficial for wide range of bearing applications.

Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

Science.gov (United States)

Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

2017-02-01

Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe 3 O 4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe 3 O 4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe 3 O 4 NPs, leading to a dramatic increase in T B . These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

Low-temperature gaseous surface hardening of stainless steel: the current status

DEFF Research Database (Denmark)

Christiansen, Thomas; Somers, Marcel A. J.

2009-01-01

a hardened case at the surface, while maintaining the superior corrosion performance. This can be achieved by dissolving colossal amounts of nitrogen and/or carbon without forming nitrides and/or carbides, thus developing so-called expanded austenite. The present work gives an overview over results obtained...... on homogeneous expanded austenite and covers the crystallography for nitrogen- and carbon-stabilised expanded austenite, the solubility for nitrogen and carbon, the diffusion of these interstitials as well as the stability of expanded austenite with respect to nitride and carbide formation. Subsequently...

The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen

Science.gov (United States)

Fischer, W. A.; Schuh, B.

1978-01-01

The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

First principles calculations of interstitial and lamellar rhenium nitrides

Energy Technology Data Exchange (ETDEWEB)

Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

First principles calculations of interstitial and lamellar rhenium nitrides

International Nuclear Information System (INIS)

Soto, G.; Tiznado, H.; Reyes, A.; Cruz, W. de la

2012-01-01

Highlights: ► The possible structures of rhenium nitride as a function of composition are analyzed. ► The alloying energy is favorable for rhenium nitride in lamellar arrangements. ► The structures produced by magnetron sputtering are metastable variations. ► The structures produced by high-pressure high-temperature are stable configurations. ► The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re 3 N and Re 2 N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials within binary nitride chemistry.

Multilayer-Forming Behavior of Cr Nitrides and Carbides for Thermoreactive Deposition

Directory of Open Access Journals (Sweden)

Kyeongmo Park

2018-05-01

Full Text Available The effect of a nitride layer on the forming behavior of CrN and (Cr, Fe7C3 multilayers for thermoreactive deposition (TRD was investigated. Plasma nitriding followed by TRD (PN-TRD produced a larger coating thickness than the case of direct TRD with no plasma nitriding. For PN-TRD, an Fe2-3N layer of 10 μm in thickness was produced on AISI 52100 steels using plasma nitriding, followed by TRD using a mixed powder composed of 30 wt % Cr, 2 wt % NH4Cl, and 68 wt % Al2O3. During TRD at 800 °C, a CrN layer of 2 μm in thickness was formed along with a thin layer of mixed carbide (Cr7C3 and nitride (CrN on top. As the deposition temperature was increased to 950 °C, a new layer of Cr7C3 was formed underneath the outermost layer composed of mixed Cr7C3 and CrN. At 950 °C, a Cr-rich zone indicated a thickness of ~7 μm. As the deposition time increased to 3 h at 950 °C, a new layer of (Cr, Fe7C3 was produced at the interface between the CrN formed at 800 °C and the base metal. This layer formed because of the abundant resources of Cr and C provided from the TRD powder and base metal, respectively. The multilayer and interface were concretely filled without the formation of voids as the TRD time increased to 6 h at 950 °C. The TRD process on a pre-nitrided layer was successfully applied to produce multilayers of CrN and Cr7C3.

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

Thermo-Optic Characterization of Silicon Nitride Resonators for Cryogenic Photonic Circuits

NARCIS (Netherlands)

Elshaari, A.W.A.; Esmaeil Zadeh, I.; Jöns, K.D.; Zwiller, Val

2016-01-01

In this paper, we characterize the Thermo-optic properties of silicon nitride ring resonators between 18 and 300 K. The Thermo-optic coefficients of the silicon nitride core and the oxide cladding are measured by studying the temperature dependence of the resonance wavelengths. The resonant modes

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

International Nuclear Information System (INIS)

Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

2013-01-01

Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

Dissolution performance of plutonium nitride based fuel materials

Energy Technology Data Exchange (ETDEWEB)

Aneheim, E.; Hedberg, M. [Nuclear Chemistry, Chemistry and Chemical Engineering, Chalmers University of Technology, Kemivaegen 4, Gothenburg, SE41296 (Sweden)

2016-07-01

Nitride fuels have been regarded as one viable fuel option for Generation IV reactors due to their positive features compared to oxides. To be able to close the fuel cycle and follow the Generation IV concept, nitrides must, however, demonstrate their ability to be reprocessed. This means that the dissolution performance of actinide based nitrides has to be thoroughly investigated and assessed. As the zirconium stabilized nitrides show even better potential as fuel material than does the pure actinide containing nitrides, investigations on the dissolution behavior of both PuN and (Pu,Zr)N has been undertaken. If possible it is desirable to perform the fuel dissolutions using nitric acid. This, as most reprocessing strategies using solvent-solvent extraction are based on a nitride containing aqueous matrix. (Pu,Zr)N/C microspheres were produced using internal gelation. The spheres dissolution performance was investigated using nitric acid with and without additions of HF and Ag(II). In addition PuN fuel pellets were produced from powder and their dissolution performance were also assessed in a nitric acid based setting. It appears that both PuN and (Pu,Zr)N/C fuel material can be completely dissolved in nitric acid of high concentration with the use of catalytic amounts of HF. The amount of HF added strongly affects dissolution kinetics of (Pu, Zr)N and the presence of HF affects the 2 solutes differently, possibly due to inhomogeneity o the initial material. Large additions of Ag(II) can also be used to facilitate the dissolution of (Pu,Zr)N in nitric acid. PuN can be dissolved by pure nitric acid of high concentration at room temperature while (Pu, Zr)N is unaffected under similar conditions. At elevated temperature (reflux), (Pu,Zr)N can, however, also be dissolved by concentrated pure nitric acid.

Effect of ion nitridation process on hardness and the corrosion resistance of biomaterials

International Nuclear Information System (INIS)

Wirjoadi; Lely Susita; Bambang Siswanto; Sudjatmoko

2012-01-01

Ion nitriding process has been performed on metal biomaterials to improve their mechanical properties of materials, particularly to increase hardness and corrosion resistance. This metallic biomaterials used for artificial bone or a prosthetic graft and used as devices of orthopedic biomaterials are usually of 316L SS metal-type and Ti-6Al-4V alloy. The purpose of this study is to research the development and utilization of ion nitridation method in order to get iron and titanium nitride thin films on the metallic biomaterials for artificial bone that has wear resistance and corrosion resistance is better. Microhardness of the samples was measured using a microhardness tester, optimum hardness of SS 316L samples are about 582 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 3 hours and the nitrogen gas pressure of 1.6 mbar, while optimum hardness of Ti-6Al-4V alloy is 764 VHN, this was obtained at the nitriding temperature of 500 °C, the nitriding time of 4 hours and the nitrogen gas pressure of 1.6 mbar. The hardness value of SS 316L sample and Ti-6Al-4V alloy increase to 143% and 153%, if compared with standard samples. The optimum corrosion resistance at temperature of 350 °C for SS 316L and Ti-6Al-4V are 260,12 and 110,49 μA/cm 2 or corrosion rate are 29,866 and 15,189 mpy, respectively. (author)

Some Thermodynamic Features of Uranium-Plutonium Nitride Fuel in the Course of Burnup

Science.gov (United States)

Rusinkevich, A. A.; Ivanov, A. S.; Belov, G. V.; Skupov, M. V.

2017-12-01

Calculation studies on the effect of carbon and oxygen impurities on the chemical and phase compositions of nitride uranium-plutonium fuel in the course of burnup are performed using the IVTANTHERMO code. It is shown that the number of moles of UN decreases with increasing burnup level, whereas UN1.466, UN1.54, and UN1.73 exhibit a considerable increase. The presence of oxygen and carbon impurities causes an increase in the content of the UN1.466, UN1.54 and UN1.73 phases in the initial fuel by several orders of magnitude, in particular, at a relatively low temperature. At the same time, the presence of impurities abruptly reduces the content of free uranium in unburned fuel. Plutonium in the considered system is contained in form of Pu, PuC, PuC2, Pu2C3, and PuN. Plutonium carbides, as well as uranium carbides, are formed in small amounts. Most of the plutonium remains in the form of nitride PuN, whereas unbound Pu is present only in the areas with a low burnup level and high temperatures.

Synthesis of nanocrystalline magnesium nitride (Mg3N2) powder using thermal plasma

International Nuclear Information System (INIS)

Kim, Dong-Wook; Kim, Tae-Hee; Park, Hyun-Woo; Park, Dong-Wha

2011-01-01

Nanocrystalline magnesium nitride (Mg 3 N 2 ) powder was synthesized from bulk magnesium by thermal plasma at atmospheric pressure. Magnesium vapor was generated through heating the bulk magnesium by DC plasma jet and reacted with ammonia gas. Injecting position and flow rates of ammonia gas were controlled to investigate an ideal condition for Mg 3 N 2 synthesis. The synthesized Mg 3 N 2 was cooled and collected on the chamber wall. Characteristics of the synthesized powders for each experimental condition were analyzed by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and thermogravity analysis (TGA). In absence of NH 3 , magnesium metal powder was formed. The synthesis with NH 3 injection in low temperature region resulted in a formation of crystalline magnesium nitride with trigonal morphology, whereas the mixture of magnesium metal and amorphous Mg 3 N 2 was formed when NH 3 was injected in high temperature region. Also, vaporization process of magnesium was discussed.

Xenon thermal behavior in sintered titanium nitride, foreseen inert matrix for GFR

International Nuclear Information System (INIS)

Bes, R.

2010-11-01

This work concerns the generation IV future nuclear reactors such as gas-cooled fast reactor (GFR) for which refractory materials as titanium nitride (TiN) are needed to surround fuel and act as a fission product diffusion barrier. This study is about Xe thermal behavior in sintered titanium nitride. Microstructure effects on Xe behavior have been studied. In this purpose, several syntheses have been performed using different sintering temperatures and initial powder compositions. Xenon species have been introduced into samples by ionic implantation. Then, samples were annealed in temperature range from 1300 C to 1600 C, these temperatures being the accidental awaited temperature. A transport of xenon towards sample surface has been observed. Transport rate seems to be slow down when increasing sintering temperature. The composition of initial powder and the crystallographic orientation of each considered grain also influence xenon thermal behavior. Xenon release has been correlated with material oxidation during annealing. Xenon bubbles were observed. Their size is proportional with xenon concentration and increases with annealing temperature. Several mechanisms which could explain Xe intragranular mobility in TiN are proposed. In addition with experiments, very low Xe solubility in TiN has been confirmed by ab initio calculations. So, bi-vacancies were found to be the most favoured Xe incorporation sites in this material. (author)

Origin of the suppression in low frequency terahertz conductivity in dilute GaAs nitride and bismide alloys

DEFF Research Database (Denmark)

Cocker, Tylor; Lu, Xianfeng; Cooke, David

We have performed time-resolved terahertz spectroscopy on GaAs1-xBix (x=7%) and observed a low-frequency suppression of the real conductivity previously seen only in dilute GaAs nitrides. We have developed a modified Drude model with a frequency-dependent scattering time that provides excellent...

Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

International Nuclear Information System (INIS)

Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

2011-01-01

Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 deg. C and 550 deg. C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N ) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

International Nuclear Information System (INIS)

Wang, Shulong; Liu, Hongxia; Song, Xin; Guo, Yulong; Yang, Zhaonian

2014-01-01

This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ-A and Γ-M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell-Weisskopf and Brooks-Herring method) are also considered. (orig.)

Synthesis of hexagonal boron nitride with the presence of representative metals

Energy Technology Data Exchange (ETDEWEB)

Budak, Erhan, E-mail: erhan@ibu.edu.t [Department of Chemistry, Faculty of Art and Science, Abant Izzet Baysal University, Bolu 14280 (Turkey); Bozkurt, Cetin [Department of Chemistry, Faculty of Art and Science, Abant Izzet Baysal University, Bolu 14280 (Turkey)

2010-11-15

Hexagonal boron nitride (h-BN) samples were prepared using the modified O'Connor method with KNO{sub 3} and Ca(NO{sub 3}){sub 2} at different temperatures (1050, 1250, and 1450 deg. C). The samples were characterized by FTIR, XRD, and SEM techniques. Usage of representative metals exhibited a positive effect on the crystallization of h-BN and they caused the formation of nano-scale products at relatively low temperature. XRD results indicated that there was an increase in interlayer spacing due to the d-{pi} interaction. The calculated lattice constants were very close to the reported value for h-BN.

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

International Nuclear Information System (INIS)

Syarifah, Ratna Dewi; Suud, Zaki

2015-01-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

Science.gov (United States)

Syarifah, Ratna Dewi; Suud, Zaki

2015-09-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

Kinetic parameters of nitridation of molybdenum and niobium alloys with various structure states

International Nuclear Information System (INIS)

Solodkin, G.A.; Bulgach, A.A.; Likhacheva, T.E.

1985-01-01

Effect of preliminary plastic strain under rolling on kinetic parameters of nitridation of VN-2AEh, VN-3 niobium alloys and molybdenum alloy with hafnium is investigated. Extreme character of dependence of kinetic parameters of nitridation on the degree of reduction under rolling is determined. Preliminary plastic strain at negligible reduction is shown to accelerate growth of the zone of internal nitridation and decelerates growth of the nitride zone. Nitrogen atom removal from the surface to the centre is retarded at the increase of the degree of reduction up to 50% and higher. The degree of deformations is the higher the lower nitridation temperature is

Effect of pulsed duty cycle control on tribological and corrosion properties of AISI-316 in cathodic cage plasma nitriding

Science.gov (United States)

Naeem, M.; Raza, H. A.; Shafiq, M.; Zaka-ul-Islam, M.; Iqbal, Javed; Díaz-Guillén, J. C.; Zakaullah, M.

2017-11-01

Austenitic stainless steels are of prime importance in many industrial sectors because of their excellent corrosion resistance; however, their poor mechanical and tribological features lead to their reduced applicability. In this regard, low-temperature cathodic cage plasma nitriding (CCPN) can be used to improve surface properties of steels without scarifying the inherent corrosion resistance. In this study, AISI-316 samples are processed in CCPN reactor at a temperature of 400 °C, for the treatment time of 4 h, at a pressure of 150 Pa and variable pulsed duty cycle (15-75%). The microstructure and mechanical features are analyzed using x-ray diffraction, scanning electron microscopy, microhardness tester and ball-on-disc wear tester. The anodic polarization test in 3.5% NaCl is conducted to examine the corrosion properties. The results show that hardness is enhanced up to 1327 HV at low duty cycle, which is considerably higher than base material (278 HV). The wear rate is found to be reduced up to 90% over base material by processing at low duty cycle. The base material exhibits severe abrasive wear, and the nitrided sample has dominant adhesive wear. The corrosion rate is found to be reduced up to 95% over base material for the sample nitrided at low duty cycle. This study shows that wear and corrosion resistance in CCPN can be significantly boosted by reducing the pulsed duty cycle.

Cavitation contributes substantially to tensile creep in silicon nitride

International Nuclear Information System (INIS)

Luecke, W.E.; Wiederhorn, S.M.; Hockey, B.J.; Krause, R.F. Jr.; Long, G.G.

1995-01-01

During tensile creep of a hot isostatically pressed (HIPed) silicon nitride, the volume fraction of cavities increases linearly with strain; these cavities produce nearly all of the measured strain. In contrast, compressive creep in the same stress and temperature range produces very little cavitation. A stress exponent that increases with stress (var-epsilon ∝ σ n , 2 < n < 7) characterizes the tensile creep response, while the compressive creep response exhibits a stress dependence of unity. Furthermore, under the same stress and temperature, the material creeps nearly 100 times faster in tension than in compression. Transmission electron microscopy (TEM) indicates that the cavities formed during tensile creep occur in pockets of residual crystalline silicate phase located at silicon nitride multigrain junctions. Small-angle X-ray scattering (SAXS) from crept material quantifies the size distribution of cavities observed in TEM and demonstrates that cavity addition, rather than cavity growth, dominates the cavitation process. These observations are in accord with a model for creep based on the deformation of granular materials in which the microstructure must dilate for individual grains t slide past one another. During tensile creep the silicon nitride grains remain rigid; cavitation in the multigrain junctions allows the silicate to flow from cavities to surrounding silicate pockets, allowing the dilation of the microstructure and deformation of the material. Silicon nitride grain boundary sliding accommodates this expansion and leads to extension of the specimen. In compression, where cavitation is suppressed, deformation occurs by solution-reprecipitation of silicon nitride

Low-stress silicon nitride layers for MEMS applications

Science.gov (United States)

Iliescu, Ciprian; Wei, Jiashen; Chen, Bangtao; Ong, Poh Lam; Tay, Francis E. H.

2006-12-01

The paper presents two deposition methods for generation of SiN x layers with "zero" residual stress in PECVD reactors: mixed frequency and high power in high frequency mode (13.56 MHz). Traditionally, mix frequency mode is commonly used to produce low stress SiN x layers, which alternatively applies the HF and LF mode. However, due to the low deposition rate of LF mode, the combined deposition rate of mix frequency is quite small in order to produce homogenous SiN x layers. In the second method, a high power which was up to 600 W has been used, may also produce low residual stress (0-20 MPa), with higher deposition rate (250 to 350 nm/min). The higher power not only leads to higher dissociation rates of gases which results in higher deposition rates, but also brings higher N bonding in the SiN x films and higher compressive stress from higher volume expansion of SiN x films, which compensates the tensile stress and produces low residual stress. In addition, the paper investigates the influence of other important parameters which have great impact to the residual stress and deposition rates, such as reactant gases flow rate and pressure. By using the final optimized recipe, masking layer for anisotropic wet etching in KOH and silicon nitride cantilever have been successfully fabricated based on the low stress SiN x layers. Moreover, nanoporous membrane with 400nm pores has also been fabricated and tested for cell culture. By cultivating the mouse D1 mesenchymal stem cells on top of the nanoporous membrane, the results showed that mouse D1 mesenchymal stem cells were able to grow well. This shows that the nanoporous membrane can be used as the platform for interfacing with living cells to become biocapsules for biomolecular separation.

Fabrication of functional structures on thin silicon nitride membranes

NARCIS (Netherlands)

Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt

A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of

Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

2014-06-01

We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

The Formation of Martensitic Austenite During Nitridation of Martensitic and Duplex Stainless Steels

Science.gov (United States)

Zangiabadi, Amirali; Dalton, John C.; Wang, Danqi; Ernst, Frank; Heuer, Arthur H.

2017-01-01

Isothermal martensite/ferrite-to-austenite phase transformations have been observed after low-temperature nitridation in the martensite and δ-ferrite phases in 15-5 PH (precipitation hardening), 17-7 PH, and 2205 (duplex) stainless steels. These transformations, in the region with nitrogen concentrations of 8 to 16 at. pct, are consistent with the notion that nitrogen is a strong austenite stabilizer and substitutional diffusion is effectively frozen at the paraequilibrium temperatures of our experiments. Our microstructural and diffraction analyses provide conclusive evidence for the martensitic nature of these phase transformations.

Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature.

Science.gov (United States)

Ma, Chengkun; Chen, Hailong; Wang, Chao; Zhang, Jifeng; Qi, Hui; Zhou, Limin

2017-11-03

Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al₂O₃), etc. and cured at room temperature (RT). Then, nano-aluminum nitride (nano-AlN), nano-Cupric oxide (nano-CuO), and nano-titanium oxide (nano-TiO₂) were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO₄(11-0500) to the more stable AlPO₄(10-0423) structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al 3+ .

Charge carrier transport properties in layer structured hexagonal boron nitride

Directory of Open Access Journals (Sweden)

T. C. Doan

2014-10-01

Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

Electrochemical Solution Growth of Magnetic Nitrides

Energy Technology Data Exchange (ETDEWEB)

Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

Nitridation Of The A A 2024 T3 Aluminium By The Glow Discharge Plasma Technique

International Nuclear Information System (INIS)

Mudjiman, Supardjono; Sujitno, Tjipto; Sudjatmoko

1996-01-01

Nitridation of A A 2024 T3 aluminium by means of plasma glow discharge technique has been carried out. For this purpose, the experiments were carried out at the temperature 30 o C, 60 o C, 100 o C, 150 o C, 200 o C, and 250 o C whereas the nitridation time were varied at 5 minutes, 15 minutes, 40 minutes, 90 minutes and 180 minutes. The results showed that the optimum temperature and time of nitridation were 60 o C and 90 minutes respectively and the hardness increased from 115 to 166 KHN

Preparation and chemical stability of iron-nitride-coated iron microparticles

International Nuclear Information System (INIS)

Luo Xin; Liu Shixiong

2007-01-01

Iron-nitride-coated iron microparticles were prepared by nitridation of the surface of iron microparticles with ammonia gas at a temperature of 510 deg. C. The phases, composition, morphology, magnetic properties, and chemical stability of the particles were studied. The phases were α-Fe, ε-Fe 3 N, and γ-Fe 4 N. The composition varied from the core to the surface, with 99.8 wt% Fe in the core, and 93.8 wt% Fe and 6 wt% N in the iron-nitride coating. The thickness of the iron-nitride coating was about 0.28 μm. The chemical stability of the microparticles was greatly improved, especially the corrosion resistance in corrosive aqueous media. The saturation magnetization and the coercive force were 17.1x10 3 and 68 kA/m, respectively. It can be concluded that iron-nitride-coated iron microparticles will be very useful in many fields, such as water-based magnetorheological fluids and polishing fluids

Characterizing AISI 1045 steel surface duplex-treated by alternating current field enhanced pack aluminizing and nitriding

Science.gov (United States)

Xie, Fei; Zhang, Ge; Pan, Jianwei

2018-02-01

Thin cases and long treating time are shortcomings of conventional duplex treatment of aluminizing followed by nitriding (DTAN). Alternating current field (ACF) enhanced DTAN was carried out on AISI 1045 steel by applying an ACF to treated samples and treating agents with a pair of electrodes for overcoming those shortcomings. By investigating cases' structures, phases, composition and hardness distributions of differently treated samples, preliminary studies were made on characterizations of the ACF enhanced duplex treatment to AISI 1045 steel. The results show that, with the help of the ACF, the surface Al-rich phase Al5Fe2 formed in conventional pack aluminizing can be easily avoided and the aluminizing process is dramatically promoted. The aluminizing case can be nitrided either with conventional pack nitriding or ACF enhanced pack nitriding. By applying ACF to pack nitriding, the diffusion of nitrogen into the aluminizing case is promoted. AlN, Fe2∼3N and solid solution of N in iron are efficiently formed as a result of reactions of N with the aluminizing case. A duplex treated case with an effective thickness of more than 170 μm can be obtained by the alternating current field enhanced 4 h pack aluminizing plus 4 h pack nitriding.

Plasma nitriding of steels

CERN Document Server

Aghajani, Hossein

2017-01-01

This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Thermal expansion of TRU nitride solid solutions as fuel materials for transmutation of minor actinides

International Nuclear Information System (INIS)

Takano, Masahide; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2009-01-01

The lattice thermal expansion of the transuranium nitride solid solutions was measured to investigate the composition dependence. The single-phase solid solution samples of (Np 0.55 Am 0.45 )N, (Pu 0.59 Am 0.41 )N, (Np 0.21 Pu 0.52 Am 0.22 Cm 0.05 )N and (Pu 0.21 Am 0.18 Zr 0.61 )N were prepared by carbothermic nitridation of the respective transuranium dioxides and nitridation of Zr metal through hydride. The lattice parameters were measured by the high temperature X-ray diffraction method from room temperature up to 1478 K. The linear thermal expansion of each sample was determined as a function of temperature. The average thermal expansion coefficients over the temperature range of 293-1273 K for the solid solution samples were 10.1, 11.5, 10.8 and 8.8 x 10 -6 K -1 , respectively. Comparison of these values with those for the constituent nitrides showed that the average thermal expansion coefficients of the solid solution samples could be approximated by the linear mixture rule within the error of 2-3%.

Sulfur-Doped Carbon Nitride Polymers for Photocatalytic Degradation of Organic Pollutant and Reduction of Cr(VI).

Science.gov (United States)

Zheng, Yun; Yu, Zihao; Lin, Feng; Guo, Fangsong; Alamry, Khalid A; Taib, Layla A; Asiri, Abdullah M; Wang, Xinchen

2017-04-01

As a promising conjugated polymer, binary carbon nitride has attracted extensive attention as a metal-free and visible-light-responsive photocatalyst in the area of photon-involving purification of water and air. Herein, we report sulfur-doped polymeric carbon nitride microrods that are synthesized through thermal polymerization based on trithiocyanuric acid and melamine (TM) supramolecular aggregates. By tuning the polymerization temperature, a series of sulfur-doped carbon nitride microrods are prepared. The degradation of Rhodamine B (RhB) and the reduction of hexavalent chromium Cr(VI) are selected as probe reactions to evaluate the photocatalytic activities. Results show that increasing pyrolysis temperature leads to a large specific surface area, strong visible-light absorption, and accelerated electron-hole separation. Compared to bulk carbon nitride, the highly porous sulfur-doped carbon nitride microrods fabricated at 650 °C exhibit remarkably higher photocatalytic activity for degradation of RhB and reduction of Cr(VI). This work highlights the importance of self-assembly approach and temperature-control strategy in the synthesis of photoactive materials for environmental remediation.

Structural phase transition at 205 K in stoichiometric vanadium nitride

International Nuclear Information System (INIS)

Kubel, F.; Lengauer, W.; Yvon, K.; Knorr, K.; Junod, A.

1988-01-01

Vanadium nitride (NaCl structure, [N]/[V]≥0.99, space group Fm3-barm, a = 4.1328(3) A at 298 K) transforms at 205(5) K into a tetragonal, noncentrosymmetric low-temperature modification [space group P4-bar2m, a = 4.1314(3) A, c = 4.1198(3) A at 45 K]. The low-temperature structure was refined from single-crystal x-ray diffraction data collected at two different temperatures (150 K, R = 2.3% for 301 reflections; 20 K, R = 3.9% for 393 reflections). It is characterized by a clustering of the metal atoms into tetrahedral V 4 units with V-V intracluster distances of 2.8534(9) and 2.8515(7) A, and V-V intercluster distances in the range of 2.9147(9) and 2.9853(7) A at 20 K. High-resolution heat-capacity data are presented (20--330 K). A discontinuity is observed at the onset of structural transformation, 204 +- 1 K

Performance analysis of a mixed nitride fuel system for an advanced liquid metal reactor

International Nuclear Information System (INIS)

Lyon, W.F.; Baker, R.B.; Leggett, R.D.

1991-01-01

In this paper, the conceptual development and analysis of a proposed mixed nitride driver and blanket fuel system for a prototypic advanced liquid metal reactor design is performed. As a first step, an intensive literature survey is completed on the development and testing of nitride fuel systems. Based on the results of this survey, prototypic mixed nitride fuel and blanket pins is designed and analyzed using the SIEX computer code. The analysis predicts that the nitride fuel consistently operated at peak temperatures and cladding strain levels that compared quite favorably with competing fuel designs. These results, along with data available in the literature on nitride fuel performance, indicate that a nitride fuel system should offer enhanced capabilities for advanced liquid metal reactors

Performance analysis of a mixed nitride fuel system for an advanced liquid metal reactor

International Nuclear Information System (INIS)

Lyon, W.F.; Baker, R.B.; Leggett, R.D.

1990-11-01

The conceptual development and analysis of a proposed mixed nitride driver and blanket fuel system for a prototypic advanced liquid metal reactor design has been performed. As a first step, an intensive literature survey was completed on the development and testing of nitride fuel systems. Based on the results of this survey, prototypic mixed nitride fuel and blanket pins were designed and analyzed using the SIEX computer code. The analysis predicted that the nitride fuel consistently operated at peak temperatures and cladding strain levels that compared quite favorably with competing fuel designs. These results, along with data available in the literature on nitride fuel performance, indicate that a nitride fuel system should offer enhanced capabilities for advanced liquid metal reactors. 13 refs., 10 figs., 2 tabs

Semipolar III-nitride laser diodes with zinc oxide cladding.

Science.gov (United States)

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

High temperature resistant cermet and ceramic compositions

Science.gov (United States)

Phillips, W. M. (Inventor)

1978-01-01

Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

Precipitation of Chromium Nitrides in the Super Duplex Stainless Steel 2507

Science.gov (United States)

Pettersson, Niklas; Pettersson, Rachel F. A.; Wessman, Sten

2015-03-01

Precipitation of chromium nitrides during cooling from temperatures in the range 1373 K to 1523 K (1100 °C to 1250 °C) has been studied for the super duplex stainless steel 2507 (UNS S32750). Characterization with optical, scanning and transmission electron microscopy was combined to quantify the precipitation process. Primarily Cr2N nitrides were found to precipitate with a high density in the interior of ferrite grains. An increased cooling rate and/or an increased austenite spacing clearly promoted nitride formation, resulting in precipitation within a higher fraction of the ferrite grains, and lager nitride particles. Furthermore, formation of the meta-stable CrN was induced by higher cooling rates. The toughness seemed unaffected by nitrides. A slight decrease in pitting resistance was, however, noticed for quenched samples with large amounts of precipitates. The limited adverse effect on pitting resistance is attributed to the small size (~200 nm) of most nitrides. Slower cooling of duplex stainless steels to allow nitrogen partitioning is suggested in order to avoid large nitrides, and thereby produce a size distribution with a smaller detrimental effect on pitting resistance.

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Science.gov (United States)

Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

2018-04-01

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

Science.gov (United States)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

2015-02-05

Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

Science.gov (United States)

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Science.gov (United States)

Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

2015-12-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

International Nuclear Information System (INIS)

Hamann, S.; Röpcke, J.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.

2015-01-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH 4 , C 2 H 2 , HCN, and NH 3 ). With the help of OES, the rotational temperature of the screen plasma could be determined

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

Energy Technology Data Exchange (ETDEWEB)

Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J. [INP-Greifswald, Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Börner, K.; Burlacov, I.; Spies, H.-J. [TU Bergakademie Freiberg, Institute of Materials Engineering, Gustav-Zeuner-Str. 5, 09599 Freiberg (Germany); Strämke, M.; Strämke, S. [ELTRO GmbH, Arnold-Sommerfeld-Ring 3, 52499 Baesweiler (Germany)

2015-12-15

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.

Simple process to fabricate nitride alloy powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

2013-01-01

alloy powders were obtained. Two types of the simple thermal treatment procedures were tested to fabricate nitride powders. First, the procedure is a direct nitriding process in which the metal powders were annealed at 1000 deg. C under nitrogen gas and then further annealed at 1500 deg. C under hydrogen containing Ar gas atmosphere. It was revealed that the particles were fragmented to smaller particles during the annealing. The XRD results showed that the uranium metal converted to UN 2 phase during the annealing at 1000 deg. C and then decomposed to UN phase during the further annealing at 1500 deg. C. Observed fragmentation and cracking of particles were caused by sequential volume changes of expansion and contraction which were accompanied by the formation and decomposition of uranium nitrides. Although uranium nitride powders were successfully fabricated during the simple nitriding process, it seems that milling of the obtained powder might be necessary to fabricate sintered nitride fuel pellets. In order to fabricate finer nitride powders, a nitriding procedure has been modified. In the modified process, the particles were heat-treated at 250 deg. C in H 2 before nitriding. The addition of a hydriding step was effective in obtaining fine uranium nitride powder. In the case of U-10 wt% Zr-alloy, however, only a few large cracks were developed on the particle surface and the particle maintained its size. This result reveals that hydriding and nitriding kinetics or mechanisms of U-10 wt% Zr alloy are quite different from those of U metal

Fully CMOS-compatible titanium nitride nanoantennas

Energy Technology Data Exchange (ETDEWEB)

Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

2016-02-01

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

Iron nitride films formed in a r. f. glow discharge

Energy Technology Data Exchange (ETDEWEB)

Li, J.L.; O' Keefe, T.J.; James, W.J. (Depts. of Chemistry and Metallurgical Engineering and Graduate Center for Materials Research, Univ. of Missouri-Rolla (United States))

1992-12-30

Fe[sub 2]N and Fe[sub 3]N films were deposited on an r.f. glow discharge by introducing Fe(CO)[sub 5] and NH[sub 3] into the reactor. The iron nitride films thus formed exhibited sheet conductivities in the range of 10[sup 2]-10[sup 3] ohm[sup -1] cm[sup -1]. They exhibited microhardness ranging from 578 to 659 kg mm[sup -2] on glass slides. The effects of the deposition temperature and the nature of the substrate material on the structure and composition of the films were investigated. An Fe[sub 4]N layer was formed on iron substrates at 400degC in the plasma nitriding process using NH[sub 3] as the gas source. The Fe[sub 4]N layer exhibited a microhardness of 230 kg mm[sup -2]. The effect of the temperature on the formation of the nitrided layer is discussed. (orig.).

Compositional analysis of silicon oxide/silicon nitride thin films

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Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

The Effect of Nitriding Treatment Variables on the Fatigue Limit of Alloy Steel (34crnimo6) Under High Cycle Fatigue

International Nuclear Information System (INIS)

Mohamed, J.; Al-Alkawi, H.; Salameh, M.

2009-01-01

The aim of this research is to improve the fatigue limit for alloy steel (34CrNiMo6) by salt bath nitriding process. This property is more effective to increase the fatigue life for parts which are used in continuous cyclic loading. All the fatigue tests were implemented before and after nitriding process under rotating bending. Constant and variable capacity stresses were applied before and after nitriding processes. The nitriding process were implemented in salt bath component at three different times (1, 2, 3) hr when temperature was constant at (555 degree centigrade). The depth of the nitride layer reached (0.24, 0.37, 0.5) mm. The nitriding process repeated of another specimens at the same times but the temperature was (600 degree centigrade), the layer depth reached (0.28, 0.41, 0.55) mm. The formation of a high nitrogen iron phases were detected with a layer of the hard chrome nitrides on the surface. The nitriding process is forming the barriers on the surface that resist the initiation and propagation of cracks, as well as generating the compressive residual stresses which delay the progress of fatigue crack. This research deduced that the nitriding processes increased the fatigue limit and this limit is proportional to the time of the nitriding process. When the time increased, the depth of nitride layer is increased, but decreased when the temperature increased to (600 degree centigrade) because of the formation of brittle phase,in spite of the increase in layer depth. (author)

The Importance Of Surface Topography For The Biological Properties Of Nitrided Diffusion Layers Produced On Ti6Al4V Titanium Alloy

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Wierzchoń T.

2015-09-01

Full Text Available Diffusion nitrided layers produced on titanium and its alloys are widely studied in terms of their application for cardiac and bone implants. The influence of the structure, the phase composition, topography and surface morphology on their biological properties is being investigated. The article presents the results of a study of the topography (nanotopography of the surface of TiN+Ti2N+αTi(N nitrided layers produced in low-temperature plasma on Ti6Al4V titanium alloy and their influence on the adhesion of blood platelets and their aggregates. The TEM microstructure of the produced layers have been examined and it was demonstrated that the interaction between platelets and the surface of the titanium implants subjected to glow-discharge nitriding can be shaped via modification of the roughness parameters of the external layer of the TiN titanium nitride nanocrystalline zone.

Doped indium nitride thin film by sol-gel spin coating method

Science.gov (United States)

Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

2017-12-01

In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

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Chengkun Ma

2017-11-01

Full Text Available Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al2O3, etc. and cured at room temperature (RT. Then, nano-aluminum nitride (nano-AlN, nano-Cupric oxide (nano-CuO, and nano-titanium oxide (nano-TiO2 were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO4(11-0500 to the more stable AlPO4(10-0423 structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al3+.

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

Science.gov (United States)

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

Science.gov (United States)

Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

2016-09-01

The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

2D to 3D transition of polymeric carbon nitride nanosheets

Energy Technology Data Exchange (ETDEWEB)

Chamorro-Posada, Pedro [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Vázquez-Cabo, José [Dpto. de Teoría de la Señal y Comunicaciones, Universidad de Vigo, ETSI Telecomunicación, Lagoas Marcosende s/n, Vigo (Spain); Sánchez-Arévalo, Francisco M. [Instituto de Investigaciones en Materiales (IIM), Universidad Nacional Autónoma de México, Apdo. Postal 70–360, Cd. Universitaria, México D.F. 04510 (Mexico); Martín-Ramos, Pablo [Dpto. de Teoría de la Señal y Comunicaciones e IT, Universidad de Valladolid, ETSI Telecomunicación, Paseo Belén 15, 47011 Valladolid (Spain); Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Martín-Gil, Jesús; Navas-Gracia, Luis M. [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain); Dante, Roberto C., E-mail: rcdante@yahoo.com [Laboratorio de Materiales Avanzados (Advanced Materials Laboratory) ETSIIAA, Universidad de Valladolid, Avenida de Madrid 44, 34004 Palencia (Spain)

2014-11-15

The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS.

2D to 3D transition of polymeric carbon nitride nanosheets

International Nuclear Information System (INIS)

Chamorro-Posada, Pedro; Vázquez-Cabo, José; Sánchez-Arévalo, Francisco M.; Martín-Ramos, Pablo; Martín-Gil, Jesús; Navas-Gracia, Luis M.; Dante, Roberto C.

2014-01-01

The transition from a prevalent turbostratic arrangement with low planar interactions (2D) to an array of polymeric carbon nitride nanosheets with stronger interplanar interactions (3D), occurring for samples treated above 650 °C, was detected by terahertz-time domain spectroscopy (THz-TDS). The simulated 3D material made of stacks of shifted quasi planar sheets composed of zigzagged polymer ribbons, delivered a XRD simulated pattern in relatively good agreement with the experimental one. The 2D to 3D transition was also supported by the simulation of THz-TDS spectra obtained from quantum chemistry calculations, in which the same broad bands around 2 THz and 1.5 THz were found for 2D and 3D arrays, respectively. This transition was also in accordance with the tightening of the interplanar distance probably due to an interplanar π bond contribution, as evidenced also by a broad absorption around 2.6 eV in the UV–vis spectrum, which appeared in the sample treated at 650 °C, and increased in the sample treated at 700 °C. The band gap was calculated for 1D and 2D cases. The value of 3.374 eV for the 2D case is, within the model accuracy and precision, in a relative good agreement with the value of 3.055 eV obtained from the experimental results. - Graphical abstract: 2D lattice mode vibrations and structural changes correlated with the so called “2D to 3D transition”. - Highlights: • A 2D to 3D transition has been detected for polymeric carbon nitride. • THz-TDS allowed us to discover and detect the 2D to 3D transition of polymeric carbon nitride. • We propose a structure for polymeric carbon nitride confirming it with THz-TDS

Synthesis of graphitic carbon nitride by reaction of melamine and uric acid

International Nuclear Information System (INIS)

Dante, Roberto C.; Martin-Ramos, Pablo; Correa-Guimaraes, Adriana; Martin-Gil, Jesus

2011-01-01

Highlights: → Graphitic carbon nitrides by CVD of melamine and uric acid on alumina. → The building blocks of carbon nitrides are heptazine nuclei. → Composite particles with alumina core and carbon nitride coating. - Abstract: Graphitic carbon nitrides were synthesized starting from melamine and uric acid. Uric acid was chosen because it thermally decomposes, and reacts with melamine by condensation at temperatures in the range of 400-600 deg. C. The reagents were mixed with alumina and subsequently the samples were treated in an oven under nitrogen flux. Alumina favored the deposition of the graphitic carbon nitrides layers on the exposed surface. This method can be assimilated to an in situ chemical vapor deposition (CVD). Infrared (IR) spectra, as well as X-ray diffraction (XRD) patterns, are in accordance with the formation of a graphitic carbon nitride with a structure based on heptazine blocks. These carbon nitrides exhibit poor crystallinity and a nanometric texture, as shown by transmission electron microscopy (TEM) analysis. The thermal degradation of the graphitic carbon nitride occurs through cyano group formation, and involves the bridging tertiary nitrogen and the bonded carbon, which belongs to the heptazine ring, causing the ring opening and the consequent network destruction as inferred by connecting the IR and X-ray photoelectron spectroscopy (XPS) results. This seems to be an easy and promising route to synthesize graphitic carbon nitrides. Our final material is a composite made of an alumina core covered by carbon nitride layers.

Surface modification of austenitic steel by various glow-discharge nitriding methods

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Tomasz Borowski

2015-09-01

Full Text Available Recent years have seen intensive research on modifying glow-discharge nitriding processes. One of the most commonly used glow-discharge methods includes cathodic potential nitriding (conventional method, and active screen plasma nitriding. Each of these methods has a number of advantages. One very important, common feature of these techniques is full control of the microstructure, chemical and phase composition, thickness and the surface topography of the layers formed. Another advantage includes the possibility of nitriding such materials as: austenitic steels or nickel alloys, i.e. metallic materials which do not diffuse nitrogen as effectively as ferritic or martensitic steels. However, these methods have some disadvantages as well. In the case of conventional plasma nitriding, engineers have to deal with the edge effect, which makes it difficult to use this method for complexly shaped components. In turn, in the case of active screen plasma nitriding, the problem disappears. A uniform, smooth layer forms, but is thinner, softer and is not as resistant to friction compared to layers formed using the conventional method. Research is also underway to combine these methods, i.e. use an active screen in conventional plasma nitriding at cathodic potential. However, there is a lack of comprehensive data presenting a comparison between these three nitriding processes and the impact of pulsating current on the formation of the microstructure and functional properties of austenitic steel surfaces. The article presents a characterisation of nitrided layers produced on austenitic X2CrNiMo17-12-2 (AISI 316L stainless steel in the course of glow-discharge nitriding at cathodic potential, at plasma potential and at cathodic potential incorporating an active screen. All processes were carried out at 440 °C under DC glow-discharge conditions and in 100 kHz frequency pulsating current. The layers were examined in terms of their microstructure, phase and

Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

International Nuclear Information System (INIS)

Shams, Q.A.

1988-01-01

Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing

The structure and function of supported molybdenum nitride and molybdenum carbide hydrotreating catalysts

Science.gov (United States)

Dolce, Gregory Martin

1997-11-01

A series of gamma-Alsb2Osb3 supported molybdenum nitrides and carbides were prepared by the temperature programmed reaction of supported molybdates with ammonia and methane/hydrogen mixtures, respectively. In the first part of this research, the effects of synthesis heating rates and molybdenum loading on the catalytic properties of the materials were examined. A significant amount of excess carbon was deposited on the surface of the carbides during synthesis. The materials consisted of small particles which were very highly dispersed. Oxygen chemisorption indicated that the nitride particles may have been two-dimensional. The dispersion of the carbides, however, appeared to decrease as the loading increased. The catalysts were evaluated for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). The molybdenum loading had the largest effect on the activity of the materials. For the nitrides, the HDN and HDS activities were inverse functions of the loading. This suggested that the most active HDN and HDS sites were located at the perimeter of the two-dimensional particles. The HDN and HDS activities of the carbides followed the same trend as the oxygen uptake. This result suggested that oxygen titrated the active sites on the supported carbides. Selected catalysts were evaluated for methylcarbazole HDN, dibenzothiophene HDS, and dibenzofuran HDO. The activity and selectivity of the nitrides and carbides were competitive with a presulfided commercial catalyst. In the second part of this work, a series of supported nitrides and carbides were prepared using a wider range of loadings (5-30 wt% Mo). Thermogravimetric analysis was used to determine the temperature at which excess carbon was deposited on the carbides. By modifying the synthesis parameters, the deposition of excess carbon was effectively inhibited. The dispersions of the supported nitrides and carbides were constant and suggested that the materials consisted of two

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium; Preparation et etude des nitrures et carbonitrures d'uranium et de plutonium

Energy Technology Data Exchange (ETDEWEB)

Anselin, F [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [French] On decrit en detail une methode simple de preparation des nitrures d'uranium et de plutonium par action directe de l'azote sous pression, a temperature moyenne (vers 400 C), sur les metaux massifs partiellement hydrures. On montre que la miscibilite est complete entre les phases UN et PuN. L'evolution des parametres reticulaires des echantillons en fonction de la temperature et en presence d'oxyde a ete utilisee pour detecter et estimer la solubilite de l'oxygene dans les diverses phases. On a etudie le frittage de ces nitrures en fonction des conditions de preparation, avec ou sans additif de

Corrosion behaviors and contact resistances of the low-carbon steel bipolar plate with a chromized coating containing carbides and nitrides

Energy Technology Data Exchange (ETDEWEB)

Bai, Ching-Yuan; Ger, Ming-Der [Department of Applied Chemistry and Materials Science, Chung Cheng Institute of Technology, National Defense University, Ta-His, Tao-Yuan, 335 (China); Wu, Min-Sheng [Department of Weapon System Engineering, Chung Cheng Institute of Technology, National Defense University, Ta-His, Tao-Yuan, 335 (China)

2009-08-15

This work improved the surface performance of low-carbon steel AISI 1020 by a reforming pack chromization process at low temperature (700 C) and investigated the possibility that the modified steels are used as metal bipolar plates (BPP) of PEMFCs. The steel surface was activated by electrical discharge machining (EDM) with different currents before the chromizing procedure. Experimental results indicate that a dense and homogenous Cr-rich layer is formed on the EDM carbon steels by pack chromization. The chromized coating pretreated with electrical discharge currents of 2 A has the lowest corrosion current density, 5.78 x 10{sup -8} Acm{sup -2}, evaluated by potentiodynamic polarization in a 0.5 M H{sub 2}SO{sub 4} solution and the smallest interfacial contact resistance (ICR), 11.8 m{omega}-cm{sup 2}, at 140 N/cm{sup 2}. The carbon steel with a coating containing carbides and nitrides is promising for application as metal BPPs, and this report presents the first research in producing BPPs with carbon steels. (author)

Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

Energy Technology Data Exchange (ETDEWEB)

Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.; Singh, D.; Goretta, K. C.; de Arellano-Lopez, A. R.; Energy Technology; Russian Academy of Sciences; Univer. de Sevilla

2001-01-01

A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramic exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.

High Pressure Low Temperature X-Ray Diffraction Studies of UO2 and UN single crystals.

Science.gov (United States)

Antonio, Daniel; Mast, Daniel; Lavina, Barbara; Gofryk, Krzysztof

Uranium dioxide is the most commonly used nuclear fuel material in commercial reactors, while uranium nitride also has many thermal and physical properties that make it attractive for potential use in reactors. Both have a cubic fcc lattice structure at ambient conditions and transition to antiferromagnetic order at low temperature. UO2 is a Mott insulator that orders in a complex non-collinear 3k magnetic structure at about 30 K, while UN has appreciable conductivity and orders in a simpler 1k magnetic structure below 52 K. Both compounds are characterized by strong magneto-structural interactions, understanding of which is vital for modeling their thermo-physical properties. While UO2 and UN have been extensively studied at and above room temperature, little work has been done to directly study the structure of these materials at low temperatures where magnetic interactions are dominant. In the course of our systematic studies on magneto vibrational behavior of UO2 and UN, here we present our recent results of high pressure X-Ray Diffraction (up to 35 GPa) measured below the Neel temperature using synchrotron radiation. Work supported by the Department of Energy, Office of Basic Energy Sciences, Materials Sciences, and Engineering Division.

Kinetic modelling of chlorination of nitrided ilmenite using MATLAB

Energy Technology Data Exchange (ETDEWEB)

Ramakrishnan, Sivakumar, E-mail: srsivakumar@usm.my; Kwok, Teong Chen, E-mail: ctck@live.com; Hamid, Sheikh Abdul Rezan Sheikh Abdul, E-mail: rezanshk@gmail.com [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300, Nibong Tebal, Penang (Malaysia)

2016-07-19

In the present study, chlorination of nitride ilmenite using 2{sup k} factorial design was investigated. The reduction experiments were carried out in a temperature range of 400°C to 500°C, chlorination duration from 1 hour to 3 hours and using different type of carbon reactant. Phases of raw materials and reduced samples were analyzed by X-ray diffraction (XRD). Ilmenite was reduced to TiO{sub x}C{sub y}N{sub z} through carbothermal and nitridation for further chlorination into titanium tetrachloride. The Design of Experiment analysis suggested that the types of carbon reactant contribute most influence to the extent of chlorination of nitride ilmenite. The extent of chlorination was highest at 500°C with 3 hours chlorination time and carbon nanotube as carbon reactant.

Nitride stabilized core/shell nanoparticles

Science.gov (United States)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

2018-01-30

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

International Nuclear Information System (INIS)

Pansila, P.; Kanomata, K.; Miura, M.; Ahmmad, B.; Kubota, S.; Hirose, F.

2015-01-01

Highlights: • We discuss the reaction mechanism of the low temperature GaN ALD. • The plasma-excited NH 3 is effective in the nitridation of the TMG saturated GaN surface with surface temperatures in excess of 100 °C. • The temperature controlled ALD of GaN is examined using RT-TMG adsorption and plasma-excited NH 3 treatment with the temperature of 115 °C. - Abstract: Fundamental surface reactions in the atomic layer deposition of GaN with trimethylgallium (TMG) and plasma-excited NH 3 are investigated by multiple-internal-reflection infrared absorption spectroscopy (MIR-IRAS) at surface temperatures varying from room temperature (RT) to 400 °C. It is found that TMG is saturated at RT on GaN surfaces when the TMG exposure exceeds 8 × 10 4 Langmuir (L), where 1 L corresponds to 1.33 × 10 −4 Pa s (or 1.0 × 10 −6 Torr s), and its saturation density reaches the maximum value at RT. Nitridation with the plasma-excited NH 3 on the TMG-saturated GaN surface is investigated by X-ray photoelectron spectroscopy (XPS). The nitridation becomes effective at surface temperatures in excess of 100 °C. The reaction models of TMG adsorption and nitridation on the GaN surface are proposed in this paper. Based on the surface analysis, a temperature-controlled ALD process consisting of RT-TMG adsorption and nitridation at 115 °C is examined, where the growth per cycle of 0.045 nm/cycle is confirmed. XPS analysis indicates that all N atoms are bonded as GaN. Atomic force microscopy indicates an average roughness of 0.23 nm. We discuss the reaction mechanism of GaN ALD in the low-temperature region at around 115 °C with TMG and plasma-excited NH 3 .

Treatment of nitridation by microwave post discharge plasma in an AISI 4140 steel

International Nuclear Information System (INIS)

Medina F, A.; Rodriguez L, V.; Zamora R, L.; Oseguera P, J.

1998-01-01

The objective of this work is to determine through X-ray diffraction, microhardness measurement and scanning electron microscopy those main operation parameters of the microwave post discharge treatment (temperature of treatment, gas mixture and permanence time) nitriding an AISI 4140 steel and to characterize the compact layer of nitrides formed during the treatment. (Author)

Reassembling Solid Materials by Femtosecond Laser Ablation: Case of Aluminum Nitride

Science.gov (United States)

Kobayashi, Tohru; Matsuo, Yukari

2013-06-01

Through atomization and ionization, we could completely alter the composition of a nonconductive material, aluminum nitride, by femtosecond laser ablation. Preferential production of pure aluminum cluster cations Aln+ (n≤32) reflects not only their higher energetic stability compared with mixed clusters AlnNm+ but also completion of thermal relaxation in ablation plasma. Observation of metastable dissociation of Aln+ indicates that cluster cations have still enough internal energy for dissociation to occur, although the process is much slower than the cluster formation. Almost no cluster formation has been observed after nanosecond laser ablation of aluminum nitride, which highlights the distinct nature of ablation plasma produced by femtosecond laser ablation.

Hydrotreatment activities of supported molybdenum nitrides and carbides

Energy Technology Data Exchange (ETDEWEB)

Dolce, G.M.; Savage, P.E.; Thompson, L.T. [University of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering

1997-05-01

The growing need for alternative sources of transportation fuels encourages the development of new hydrotreatment catalysts. These catalysts must be active and more hydrogen efficient than the current commercial hydrotreatment catalysts. Molybdenum nitrides and carbides are attractive candidate materials possessing properties that are comparable or superior to those of commercial sulfide catalysts. This research investigated the catalytic properties of {gamma}-Al{sub 2}O{sub 3}-supported molybdenum nitrides and carbides. These catalysts were synthesized via temperature-programmed reaction of supported molybdenum oxides with ammonia or methane/hydrogen mixtures. Phase constituents and compositions were determined by X-ray diffraction, elemental analysis, and neutral activation analysis. Oxygen chemisorption was used to probe the surface properties of the catalysts. Specific activities of the molybdenum nitrides and carbides were competitive with those of a commercial sulfide catalyst for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). For HDN and HDS, the catalytic activity on a molybdenum basis was a strong inverse function of the molybdenum loading. Product distributions of the HDN, HDO and HDS of a variety of heteroatom compounds indicated that several of the nitrides and carbides were more hydrogen efficient than the sulfide catalyst. 35 refs., 8 figs., 7 tabs.

Decentralized substations for low-temperature district heating with no Legionella risk, and low return temperatures

International Nuclear Information System (INIS)

Yang, Xiaochen; Li, Hongwei; Svendsen, Svend

2016-01-01

To improve energy efficiency and give more access to renewable energy sources, low-temperature district heating (LTDH) is a promising concept to be realized in the future. However, concern about Legionella proliferation restricts applying low-temperature district heating in conventional systems with domestic hot water (DHW) circulation. In this study, a system with decentralized substations was analysed as a solution to this problem. Furthermore, a modification for the decentralized substation system were proposed in order to reduce the average return temperature. Models of conventional system with medium-temperature district heating, decentralized substation system with LTDH, and innovative decentralized substation system with LTDH were built based on the information of a case building. The annual distribution heat loss and the operating costs of the three scenarios were calculated and compared. From the results, realizing LTDH by the decentralized substation unit, 30% of the annual distribution heat loss inside the building can be saved compared to a conventional system with medium-temperature district heating. Replacing the bypass pipe with an in-line supply pipe and a heat pump, the innovative decentralized substation system can reduce distribution heat loss by 39% compared to the conventional system and by 12% compared to the normal decentralized substation system with bypass. - Highlights: • The system of decentralized substations can realize low-temperature district heating without running the risk of Legionella. • Decentralized substations help reduce the distribution heat loss inside the building compared to conventional system. • A new concept that can reduce the return temperature for district heating is proposed and analysed.

Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Meng Chuan Lee

2013-01-01

Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

High-temperature thermodynamic activities of zirconium in platinum alloys determined by nitrogen-nitride equilibria

International Nuclear Information System (INIS)

Goodman, D.A.

1980-05-01

A high-temperature nitrogen-nitride equilibrium apparatus is constructed for the study of alloy thermodynamics to 2300 0 C. Zirconium-platinum alloys are studied by means of the reaction 9ZrN + 11Pt → Zr 9 Pt 11 + 9/2 N 2 . Carful attention is paid to the problems of diffusion-limited reaction and ternary phase formation. The results of this study are and a/sub Zr//sup 1985 0 C/ = 2.4 x 10 -4 in Zr 9 Pt 11 ΔG/sub f 1985 0 C/ 0 Zr 9 Pt 11 less than or equal to -16.6 kcal/g atom. These results are in full accord with the valence bond theory developed by Engel and Brewer; this confirms their prediction of an unusual interaction of these alloys

Growth of group III nitride films by pulsed electron beam deposition

International Nuclear Information System (INIS)

Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

2009-01-01

We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

Microstructure and corrosion resistance of nitrogen-rich surface layers on AISI 304 stainless steel by rapid nitriding in a hollow cathode discharge

Science.gov (United States)

Li, Yang; He, Yongyong; Zhang, Shangzhou; Wang, Wei; Zhu, Yijie

2018-01-01

Nitriding treatments have been successfully applied to austenitic stainless steels to improve their hardness and tribological properties. However, at temperatures above 450 °C, conventional plasma nitriding processes decrease the corrosion resistance due to the formation of CrN phases within the modified layer. In this work, AISI 304 austenitic stainless steels were efficiently treated by rapid plasma nitriding at a high temperature of 530 °C in a hollow cathode discharge. The enhanced ionization obtained in the hollow cathode configuration provided a high current density and, consequently, a high temperature could be attained in a short time. The nitrided layers were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results indicated that the dual-layer structure of the nitrided layer consists of a high-N face-centered cubic structure with a free CrN precipitate outer (top) layer and a nitrogen-expanded austenite S-phase bottom layer. The rapid nitriding-assisted hollow cathode discharge technique permits the use of high temperatures, as high as 530 °C, without promoting degradation in the corrosion resistance of stainless steel.

Effect of Plasma Nitriding Process Conditions on Corrosion Resistance of 440B Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Łępicka Magdalena

2014-09-01

Full Text Available Martensitic stainless steels are used in a large number of various industrial applications, e.g. molds for plastic injections and glass moldings, automotive components, cutting tools, surgical and dental instruments. The improvement of their tribological and corrosion properties is a problem of high interest especially in medical applications, where patient safety becomes a priority. The paper covers findings from plasma nitrided AISI 440B (PN-EN or DIN X90CrMoV18 stainless steel corrosion resistance studies. Conventionally heat treated and plasma nitrided in N2:H2 reaction gas mixture (50:50, 65:35 and 80:20, respectively in two different temperature ranges (380 or 450°C specimens groups were examined. Microscopic observations and electrochemical corrosion tests were performed using a variety of analytical techniques. As obtained findings show, plasma nitriding of AISI 440B stainless steel, regardless of the process temperature, results in reduction of corrosion current density. Nevertheless, applying thermo-chemical process which requires exceeding temperature of about 400°C is not recommended due to increased risk of steel sensitization to intergranular and stress corrosion. According to the results, material ion nitrided in 450°C underwent leaching corrosion processes, which led to significant disproportion in chemical composition of the corroded and corrosion-free areas. The authors suggest further research into corrosion process of plasma nitrided materials and its degradation products.

Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer

International Nuclear Information System (INIS)

Hakami, F.; Sohi, M. Heydarzadeh; Ghani, J. Rasizadeh

2011-01-01

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273 K for 5 h. The samples were then plasma-nitrided for 5 h at 803 K and 823 K, in a gas mixture of 75%N 2 + 25%H 2 . The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8 μm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layers was significantly higher than the hardness of the base material or chromized layer. The main cause of the large improvement in surface hardness was due to the formation of Cr x N and Fe x N phases in the duplex treated layers. Increasing of nitriding temperature from 803 to 823 K enhanced the formation of CrN in the duplex treated layer and increased the thickness of the nitrided layer.

Research and development of nitride fuel cycle technology in Europe

International Nuclear Information System (INIS)

Wallenius, Janne

2004-01-01

Research and development on nitride fuels for minor actinide burning in accelerator driven systems is performed in Europe in context of the CONFIRM project. Dry and wet methods for fabrication of uranium free nitride fuels have been developed with the assistance of thermo-chemical modelling. Four (Pu, Zr) pins have been fabricated by PSI and will be irradiated in Studsvik at a rating of 40-50 kW/m. The thermal conductivity of (Pu, Zr)N has been measured and was found to be in agreement with earlier theoretical assessments. Safety modeling indicates that americium bearing nitride fuels, in spite of their relatively poor high temperature stability under atmospheric pressure, can survive power transients as long as the fuel cladding remains intact. (author)

Low-temperature conductivity of gadolinium sulfides

Energy Technology Data Exchange (ETDEWEB)

Mustafaeva, S. N., E-mail: solmust@gmail.com [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan); Asadov, S. M., E-mail: mirasadov@gmail.com [Azerbaijan National Academy of Sciences, Institute of Catalysis and Inorganic Chemistry (Azerbaijan)

2016-09-15

In samples of GdS{sub x} (x = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdS{sub x} phases is established. The parameters of localized states in GdS{sub x} are determined.

The influence of powder composition and sintering temperature on transformation kinetics, structure and mechanical properties of hot-pressed silicon nitride

International Nuclear Information System (INIS)

Knoch, H.; Ziegler, G.

1977-01-01

The strength at room temperature of hot-pressed silicon nitride is strongly dependent on the structure which in turn depends on powder composition and process parameters. Connections between production conditions (MgO content, pressing temperature, pressing time), structure (α/β content and morphology), and the properties at room temperature are discussed. The growth of oblong β grains - as a direct result of phase transition from α- to β-Si 3 N 4 - results in microstructural meshing and thus in a higher strength. Optimum mechanical properties are achieved after full phase transformation and with a microstructure as fine as possible. The direct connection between strength and transformed β fraction indicates a possible way for a relatively fast determination of optimum properties for a given initial powder. (orig.) [de

Internal nitridation of nickel-base alloys; Innere Nitrierung von Nickelbasis-Legierungen

Energy Technology Data Exchange (ETDEWEB)

Krupp, U.; Christ, H.J. [Siegen Univ. (Gesamthochschule) (Germany). Inst. fuer Werkstofftechnik

1998-12-31

The chromuim concentration is the crucial variable in nitridation processes in nickel-base alloys. Extensive nitridation experiments with various specimen alloys of the system Ni-Cr-Al-Ti have shown that the Cr itself starts to form nitrides as from elevated initial concentrations of about 10 to 20 weight%, (depending on temperature), but that lower concentrations have an earlier effect in that they induce a considerable increase in the N-solubility of the nickel-base alloys. This causes an accelerated nitridation attack on the alloying elements Ti and Al. Apart from experimental detection and analysis, the phenomenon of internal nitridation could be described as well by means of a mathematical model calculating the diffusion with the finite-differences method and determining the precipitation thermodynamics by way of integrated equilibrium calculations. (orig./CB) [Deutsch] Im Verlauf der Hochtemperaturkorrosion von Nickelbasis-Superlegierungen kann durch beanspruchungsbedingte Schaedigungen der Oxiddeckschicht ein Verlust der Schutzwirkung erfolgen und als Konsequenz Stickstoff aus der Atmosphaere in den Werkstoff eindringen. Der eindiffundierende Stickstoff bildet vor allem mit den Legierungselementen Al, Cr und Ti Nitridausscheidungen, die zu einer relativ rasch fortschreitenden Schaedigung fuehren koennen. Eine bedeutende Rolle bei diesen Nitrierungsprozessen in Nickelbasislegierungen spielt die Cr-Konzentration in der Legierung. So ergaben umfangreiche Nitrierungsexperimente an verschiedenen Modellegierungen des Systems Ni-Cr-Al-Ti, dass Cr zwar selbst erst ab Ausgangskonzentrationen von ca. 10-20 Gew.% (abhaengig von der Temperatur) Nitride bildet, allerdings bereits bei geringen Konzentrationen die N-Loeslichkeit von Nickelbasis-Legierungen entscheidend erhoeht. Dies hat zur Folge, dass es zu einem beschleunigten Nitrierungsangriff auf die Legierungselemente Ti und Al kommt. Neben den experimentellen Untersuchungen konnte das Phaenomen der inneren

Preparation and characterization of electrochemically deposited carbon nitride films on silicon substrate

International Nuclear Information System (INIS)

Yan Xingbin; Xu Tao; Chen Gang; Yang Shengrong; Liu Huiwen; Xue Qunji

2004-01-01

Carbon nitride films (CN x films) were deposited on Si(100) substrates by the electrolysis of methanol-urea solution at high voltage, atmospheric pressure, and low temperature. The microstructure and morphology of the resulting CN x films were analysed by means of Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectrometry (FTIR), x-ray diffraction (XRD), and atomic force microscopy. The tribological properties of the CN x films were examined on an UMT-2MT friction and wear test rig. The Raman spectrum showed two characteristic bands: a graphite G band and a disordered D band of carbon, which suggested the presence of an amorphous carbon matrix. XPS and FTIR measurements suggested the existence of both single and double carbon-nitride bonds in the film and the hydrogenation of the carbon nitride phase. The XRD spectrum showed various peaks of different d values, which could confirm the existence of the polycrystalline carbon nitride phase. The hydrogenated CN x films were compact and uniform, with a root mean square roughness of about 18 nm. The films showed excellent friction-reduction and wear-resistance, with the friction coefficient in the stable phase being about 0.08. In addition, the growth mechanism of the CN x films in liquid phase electro-deposition was discussed as well. It was assumed that the molecules of CH 3 OH and CO(NH 2 ) 2 were polarized under high electric field, and the CN x film was formed on the substrate through the reaction of the -CH 3 and -NH 2 groups on the cathode

The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

International Nuclear Information System (INIS)

Siddiqua, Poppy; O'Leary, Stephen K.

2016-01-01

Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

Efficient removal of UDMH from dilute nitride MOCVD exhaust streams

Science.gov (United States)

Pahle, Jörg; Czerniak, Mike; Seeley, Andy; Baker, Derek

2004-12-01

Unsymmetrical dimethyl hydrazine (UDMH) (CH 3) 2N 2H 2 is often used in the deposition of dilute nitride semiconductors because it provides a source of nitrogen with a low thermal decomposition temperature (Temperature-dependent carrier lifetime in GaNAs using resonant-coupled photoconductive decay, NCPV Program Review Meeting, Lakewood, Colorado, 14-17 October, 2001). The problems with using this material, however, are its significant toxicity (0.01 ppm compared to ammonia's 25 ppm) and also the fact that it blocks the action of conventional dosed wet scrubbers sometimes used on nitride applications, resulting in diminished efficiency in removing arsine (the source of arsenic), and arsine being similarly toxic (TLV of 0.05 ppm). Efficient removal of UDMH, AsH 3 and hydrogen (which, though not toxic poses a potential safety hazard) by means of a combined thermal oxidation reaction and wet scrubber in series is described at input gas flow rates exceeding those typically encountered in practice. The detection technique employed was Fourier transform infra red spectroscopy (FTIR), and the calibration and resolution techniques will be described. For input UDMH flows of up to 445 sccm (i.e. 1.85×10 -2 mol/min), destructive reaction efficiencies (DREs) of >99.9% were demonstrated, corresponding to the background detection resolution of 0.4 ppm.

Atomic-layer deposition of silicon nitride

CERN Document Server

Yokoyama, S; Ooba, K

1999-01-01

Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

Boron nitride encapsulated graphene infrared emitters

International Nuclear Information System (INIS)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

2016-01-01

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

Boron nitride encapsulated graphene infrared emitters

Energy Technology Data Exchange (ETDEWEB)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R., E-mail: g.r.nash@exeter.ac.uk [College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF (United Kingdom)

2016-03-28

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

III-nitride semiconductors and their modern devices

CERN Document Server

2013-01-01

This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

Hardness and thermal stability of cubic silicon nitride

DEFF Research Database (Denmark)

Jiang, Jianzhong; Kragh, Flemming; Frost, D. J.

2001-01-01

The hardness and thermal stability of cubic spinel silicon nitride (c-Si3N4), synthesized under high-pressure and high-temperature conditions, have been studied by microindentation measurements, and x-ray powder diffraction and scanning electron microscopy, respectively The phase at ambient...

Ionic nitriding of high chromium martensitic stainless steels

International Nuclear Information System (INIS)

Bruhl, S.P; Charadia, R; Vaca, L.S; Cimetta, J

2008-01-01

Martensitic stainless steels are used in industrial applications where resistance to corrosion and mechanical resistance are needed simultaneously. These steels are normally used in tempering and annealing condition which gives them hardnesses of 500 and 600 HV (about 54 HRC). Ionic nitriding is an assisted diffusion technique that has recently been successfully applied to harden austenitic stainless steels without reducing their resistance to corrosion. The application with AISI 420 martensitic steels has not given good results yet, because in most cases, it affects their corrosion resistance. This work presents the results of the pulsed nitriding of martensitic steels with a higher chrome content, such as the M340 and M333 Boehler steels and they are compared with the same materials after tempering and annealing, without nitriding. The influence of the variations in the parameters of the process, such as the percentage of active time in the pulsed wave, partial nitrogen pressure, current density and effective tension in the microstructure, hardness and wear and corrosion resistance was studied. The microstructure was studied with an optic microscope; the wear resistance with abrasion tests following ASTM G-65 and corrosion with 100 hour long saline haze tests, in a device built according to ASTM B117. Hardness was found to rise to values of 1000 to 1350 HV in all the steels after ionic nitriding, the modified layers oscillated from 3 to 15 microns. As a result, wear resistance also increased, with differences depending on the microstructure and the thickness of the modified layer. However, corrosion resistance was not good, except in the case of the M333 steel test piece with less hardness and a less thick nitrided layer without a noticeable interphase (au)

Low temperature experiments in radiation biophysics

International Nuclear Information System (INIS)

Moan, J.

1977-01-01

The reasons for performing experiments in radiation biophysics at low temperatures, whereby electron spectra may be studied, are explained. The phenomenon of phosphorescence spectra observed in frozen aqueous solutions of tryptophan and adenosine is also described. Free radicals play an important part in biological radiation effects and may be studied by ESR spectroscopy. An ESR spectrum of T 1 bacteriophages irradiated dry at 130K is illustrated and discussed. Hydrogen atoms, which give lines on the spectrum, are believed to be those radiation products causing most biological damage in a dry system. Low temperature experiments are of great help in explaining the significance of direct and indirect effects. This is illustrated for the case of trypsin. (JIW)

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

Science.gov (United States)

Mei, Antonio Rodolph Bighetti

the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based upon temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho 300K of 12.0 muO-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6x10-8 O-cm K -1, a residual resistivity rhoo below 30 K of 0.78 muO-cm (corresponding to a residual resistivity ratio rho300K/rho 15K = 15), and the layers exhibit a superconducting transition temperature Tc = 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi|| = 18 nm and xi⊥ = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7+/-1.7 and 450+/-25 GPa. Transport electron/phonon coupling parameters and Eliashberg spectral functions alphatr2F(ho) are determined for Group-IV TM nitrides TiN, ZrN, and HfN, and the rare-earth (RE) nitride CeN using an inversion procedure based upon temperature-dependent (4 electron/phonon coupling parameters lambdatr vary from 1.11 for ZrN to 0.82 for HfN, 0.73 for TiN, and 0.44 for CeN. The small variation in lambda tr among the TM nitrides and the weak coupling in CeN are consistent with measured Tc values: 10.4 (ZrN), 9.18 (HfN), 5.35 (TiN), and electron/phonon coupling in conventional superconductors. Spectral peaks in alpha2F(ho), corresponding to regions in energy-space for which electrons couple to acoustic hoac and optical ho op phonon modes, are centered at ho ac = 33 and hoop = 57 meV for TiN, 25 and 60 meV for ZrN, 18 and 64 meV for HfN, and 21 and 39 meV for CeN. The acoustic modes soften with

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

Science.gov (United States)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Rapid synthesis of graphitic carbon nitride powders by metathesis reaction between CaCN2 and C2Cl6

International Nuclear Information System (INIS)

Pang Linlin; Bi Jianqiang; Bai Yujun; Qi Yongxin; Zhu Huiling; Wang Chengguo; Wu Jiwei; Lu Chengwei

2008-01-01

Carbon nitride powders were rapidly synthesized at low temperature via the chemical metathesis reaction between CaCN 2 and C 2 Cl 6 . X-ray diffraction results confirm the formation of crystalline graphitic carbon nitride. Besides the dominant morphology of nanoparticles, flakes, nanorods, hollow and solid spheres can be observed by transmission electron microscopy. The absorption peaks of C-N, C=N and s-triazine rings, as well as the absence of C≡N peak in the infrared spectra, further verify the formation of graphite-like sp 2 -bonded structure with planar networks. Elemental analysis gives an atomic ratio of N/C around 0.3. X-ray photoelectron spectra exhibit the existence of chemical bonding between C and N

Inverse magnetostrictive characteristics of Fe-Co composite materials using gas-nitriding process

Science.gov (United States)

Nakajima, Kenya; Yang, Zhenjun; Narita, Fumio

2018-03-01

The inverse magnetostrictive response, known as the Villari effect, of magnetostrictive materials is a change in magnetization due to an applied stress. It is commonly used for sensor applications. This work deals with the inverse magnetostrictive characteristics of Fe-Co bimetal plates that were subjected gas-nitriding process. Gas-nitriding was performed on bimetal plates for 30 min at 853 K as a surface heat treatment process. The specimens were cooled to room temperature after completing the nitriding treatment. Three-point bending tests were performed on the plates under a magnetic field. The changes on the magnetic induction of the plates due to the applied load are discussed. The effect of the nitriding treatment on the inverse magnetostrictive characteristics, magnetostrictive susceptibility, and magnetic hysteresis loop was examined. Our work represents an important step forward in the development of magnetostrictive sensor materials.

Molybdenum Nitride Films: Crystal Structures, Synthesis, Mechanical, Electrical and Some Other Properties

Directory of Open Access Journals (Sweden)

Isabelle Jauberteau

2015-10-01

Full Text Available Among transition metal nitrides, molybdenum nitrides have been much less studied even though their mechanical properties as well as their electrical and catalytic properties make them very attractive for many applications. The δ-MoN phase of hexagonal structure is a potential candidate for an ultra-incompressible and hard material and can be compared with c-BN and diamond. The predicted superconducting temperature of the metastable MoN phase of NaCl-B1-type cubic structure is the highest of all refractory carbides and nitrides. The composition of molybdenum nitride films as well as the structures and properties depend on the parameters of the process used to deposit the films. They are also strongly correlated to the electronic structure and chemical bonding. An unusual mixture of metallic, covalent and ionic bonding is found in the stoichiometric compounds.

Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

DEFF Research Database (Denmark)

Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

2017-01-01

Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

Synthesis of functional boron or aluminium nitride materials for energy applications (production and storage of hydrogen)

International Nuclear Information System (INIS)

Salameh, Chrystelle

2014-01-01

Porous inorganic materials are of great interest owing to their potential in energy applications. The general objective of the present thesis concerns the development of functional (carbon)nitrides for hydrogen generation and storage (material design, elaboration, properties and applications). The PDCs route, which offers a large number of opportunities in chemistry and ceramic sciences, has been applied to produce functional (carbon)nitrides materials. Firstly, we prepared porous binary systems such as AlN and BN by replicating the structure of CMK-3 and that of activated carbon. After pyrolysis and removal of the template, we demonstrated the feasibility of producing nitrides with tailored porosity. Moreover, by coupling the PDCs route with the aerogel technology, we succeeded in preparing polymer-derived AlN and BN aerogels. We assessed the potential of these porous AlN and BN materials in nano-confinement of two chemical hydrides, namely sodium alanate and ammonia borane, respectively. In both cases, the nano-confinement destabilized the network of the hydride and favored the release of H 2 at low temperature. Besides, in the case of nano-confined ammonia borane, no evolution of undesired gaseous by-products was observed, which means that pure hydrogen was produced in our conditions. Secondly, we prepared porous quaternary systems through the association of AlN/BN with Si-based ceramics. In particular, we investigated the preparation of SiAlCN with tailored porosity by using two approaches: the 'molecular building block' and 'single-source precursor' approaches. Concerning the former, we investigated the preparation of ordered meso-porous materials to be used as catalytic supports for hydrolysis of alkaline solution of sodium borohydride. We succeeded in generating high amounts of H 2 with attractive kinetics. Concerning the latter approach, the work was focused on the investigation of the chemistry of SiAlCN and SiBCN materials with a

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

Directory of Open Access Journals (Sweden)

Cristina Besleaga

2017-11-01

Full Text Available Aluminum Nitride (AlN has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors. AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate, corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C on Si (100 substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films for the realization of various type of sensors (with emphasis on bio-sensors is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure.

Science.gov (United States)

Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Kołodziejczyk, Łukasz; Luculescu, Catalin-Romeo; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Vladescu, Alina; Stan, George E

2017-11-17

Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c -axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

Tribological properties of plasma and pulse plasma nitrided AISI 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Podgornik, B.; Vizintin, J. [Ljubljana Univ. (Slovenia). Center of Tribology and Tech. Diagnostics; Leskovsek, V. [Inst. of Metals and Technologies, Ljubljana (Slovenia)

1998-10-10

Plasma nitriding is usually used for ferrous materials to improve their surface properties. Knowledge of the properties of thin surface layers is essential for designing engineering components with optimal wear performance. In our study, we investigated the microstructural, mechanical and tribological properties of plasma- and pulse plasma-nitrided AISI 4140 steel in comparison to hardened steel. The influence of nitriding case depth as well as the presence of a compound layer on its tribological behaviour was also examined. Plasma and pulse plasma nitriding were carried out using commercial nitriding processes. Nitrided samples were fully characterised, using metallographic, SEM microscopic, microhardness and profilometric techniques, before and after wear testing. Wear tests were performed on a pin-on-disc wear testing machine in which nitrided pins were mated to hardened ball bearing steel discs. The wear tests were carried out under dry conditions where hardened samples were used as a reference. The resulting wear loss as well as the coefficient of friction was monitored as a function of load and test time. Several microscopic techniques were used to analyse the worn surfaces and wear debris in order to determine the dominant friction and wear characteristics. Results showed improved tribological properties of AISI 4140 steel after plasma and pulse plasma nitriding compared to hardening. However, the compound layer should be removed from the surface by mechanical means or by decreasing the amount of nitrogen in the nitriding atmosphere, to avoid impairment of the tribological properties by fracture of the hard and brittle compound layer followed by the formation of hard abrasive particles. (orig.) 10 refs.

AlN powder synthesis via nitriding reaction of aluminum sub-chloride

Energy Technology Data Exchange (ETDEWEB)

Ohashi, T.; Nishida, T.; Sugiura, M. (Waseda Univ., Tokyo (Japan). Graduate School); Fuwa, A. (Waseda Univ., Tokyo (Japan))

1993-06-01

In order to obtain the pertinent properties of aluminium nitride in its sintered form, it is desirable to have powders of finer sizes with narrower size distribution and higher purity, thereby making the sintering processing easier and the final body denser. Instead of using sublimated aluminum tri-chloride vapor (AlCl3) as an aluminum source in the vapor phase nitriding reaction, the mixed aluminum chloride vapor consisted of aluminum tri-chloride, bi-chloride and mono-chloride are used in the reaction with ammonia at temperatures of 1000 and 1200K. The mixed chloride vapors are produced by reacting chlorine with molten aluminum at 1000 or 1200K under atmospheric pressure. The reaction of this mixed chloride vapor with ammonia is then experimentally investigated to study the aluminum nitride powder morphology. The aluminum nitride powders synthesized under various ammonia concentrations are characterized for size distribution, mean particle size and particle morphology. 24 refs., 8 figs., 2 tabs.

Advanced ceramic material for high temperature turbine tip seals

Science.gov (United States)

Solomon, N. G.; Vogan, J. W.

1978-01-01

Ceramic material systems are being considered for potential use as turbine blade tip gas path seals at temperatures up to 1370 1/4 C. Silicon carbide and silicon nitride structures were selected for study since an initial analysis of the problem gave these materials the greatest potential for development into a successful materials system. Segments of silicon nitride and silicon carbide materials over a range of densities, processed by various methods, a honeycomb structure of silicon nitride and ceramic blade tip inserts fabricated from both materials by hot pressing were tested singly and in combination. The evaluations included wear under simulated engine blade tip rub conditions, thermal stability, impact resistance, machinability, hot gas erosion and feasibility of fabrication into engine components. The silicon nitride honeycomb and low-density silicon carbide using a selected grain size distribution gave the most promising results as rub-tolerant shroud liners. Ceramic blade tip inserts made from hot-pressed silicon nitride gave excellent test results. Their behavior closely simulated metal tips. Wear was similar to that of metals but reduced by a factor of six.

Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

Science.gov (United States)

1985-12-11

ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near

Ion-nitriding of austenitic stainless steels

International Nuclear Information System (INIS)

Pacheco, O.; Hertz, D.; Lebrun, J.P.; Michel, H.

1995-01-01

Although ion-nitriding is an extensively industrialized process enabling steel surfaces to be hardened by nitrogen diffusion, with a resulting increase in wear, seizure and fatigue resistance, its direct application to stainless steels, while enhancing their mechanical properties, also causes a marked degradation in their oxidation resistance. However, by adaption of the nitriding process, it is possible to maintain the improved wear resistant properties while retaining the oxidation resistance of the stainless steel. The controlled diffusion permits the growth of a nitrogen supersaturated austenite layer on parts made of stainless steel (AISI 304L and 316L) without chromium nitride precipitation. The diffusion layer remains stable during post heat treatments up to 650 F for 5,000 hrs and maintains a hardness of 900 HV. A very low and stable friction coefficient is achieved which provides good wear resistance against stainless steels under diverse conditions. Electrochemical and chemical tests in various media confirm the preservation of the stainless steel characteristics. An example of the application of this process is the treatment of Reactor Control Rod Cluster Assemblies (RCCAs) for Pressurized Water Nuclear Reactors

Frequency effects and properties of plasma deposited fluorinated silicon nitride

International Nuclear Information System (INIS)

Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

1988-01-01

The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

Thermionic field emission in gold nitride Schottky nanodiodes

Science.gov (United States)

Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

2012-11-01

We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

Low loss superconducting titanium nitride coplanar waveguide resonators

International Nuclear Information System (INIS)

Vissers, M. R.; Gao, J.; Wisbey, D. S.; Hite, D. A.; Pappas, D. P.; Tsuei, C. C.; Corcoles, A. D.; Steffen, M.

2010-01-01

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼10 7 ) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≅2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Q i for both high and low electric field regimes.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

Micro string resonators as temperature sensors

DEFF Research Database (Denmark)

Larsen, T.; Schmid, S.; Boisen, A.

2013-01-01

The resonance frequency of strings is highly sensitive to temperature. In this work we have investigated the applicability of micro string resonators as temperature sensors. The resonance frequency of strings is a function of the tensile stress which is coupled to temperature by the thermal...... to the low thermal mass of the strings. A temperature resolution of 2.5×10-4 °C has been achieved with silicon nitride strings. The theoretical limit for the temperature resolution of 8×10-8 °C has not been reached yet and requires further improvement of the sensor....

Metal Nitrides for Plasmonic Applications

DEFF Research Database (Denmark)

Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

2012-01-01

Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Energy Technology Data Exchange (ETDEWEB)

Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

2017-05-01

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

International Nuclear Information System (INIS)

Jagannadham, Kasichainula

2015-01-01

Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr 2 N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W 2 N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W 2 N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films

Stainless steels low temperature nitriding

International Nuclear Information System (INIS)

Roux, T.; Darbeida, A.; Von Stebut, J.; Michel, H.; Lebrun, J.P.; Hertz, D.

1995-01-01

Nitrogen ions implantation of 316L stainless steel leads to monophasic diffusion layers, which are constituted of a solid solution (γ N ) fcc, metastable, nitrogen sur-saturated, and without order. This article shows that for 316L stainless steels,these layers improve the tribological properties without degradation of the corrosion resistance. (A.B.). 13 refs. 6 figs

Synthesis and characterization of group V metal carbide and nitride catalysts

Science.gov (United States)

Kwon, Heock-Hoi

1998-11-01

Group V transition metal carbides and nitrides were prepared via the temperature programmed reaction (TPR) of corresponding oxides with NHsb3 or a CHsb4/Hsb2 mixture. Except for the tantalum compounds, phase-pure carbides and nitrides were prepared. The vanadium carbides and nitrides were the most active and selective catalysts. Therefore the principal focus of the research was the preparation, characterization, and evaluation of high surface area vanadium nitride catalysts. A series of vanadium nitrides with surface areas up to 60 msp2/g was prepared. Thermal gravimetric analysis coupled with x-ray diffraction and scanning electron microscopy indicated that the solid-state reaction proceeded by the sequential reduction of Vsb2Osb5 to VOsb{0.9} and concluded with the topotactic substitution of nitrogen for oxygen in VOsb{0.9}. The transformation of Vsb2Osb5 to VN was pseudomorphic. An experimental design was executed to determine effects of the heating rates and space velocities on the VN microstructures. The heating rates had minor effects on the surface areas and pore size distributions; however, increasing the space velocity significantly increased the surface area. The materials were mostly mesoporous. Oxygen chemisorption on the vanadium nitrides scaled linearly with the surface area. The corresponding O/Vsbsurface ratio was ≈0.6. The vanadium nitrides were active for butane activation and pyridine hydrodenitrogenation. During butane activation, their selectivities towards dehydrogenation products were as high as 98%. The major product in pyridine hydrodenitrogenation was pentane. The reaction rates increased almost linearly with the surface area suggesting that these reactions were structure insensitive. The vanadium nitrides were not active for crotonaldehyde hydrogenation; however, they catalyzed an interesting ring formation reaction that produced methylbenzaldehyde and xylene from crotonaldehyde. A new method was demonstrated for the production of very

Low temperature modification of gamma-irradiation effect on peas. II.Low temperature effect on the radio-sensitivity and the chlorophyll mutations

International Nuclear Information System (INIS)

Najdenova, N.; Vasileva, M.

1976-01-01

Dry pea seeds of cv.Ramonskii 77 with 11-12% moisture were γ-irradiated by 60 Co in doses 5, 15, 20 and 30 krad. Low temperature (-78 deg C) was effected in the form of dry ice for a 24 h period prior to, at the time of and post irradiation. As control were used: (a) dry non-irradiated seeds, stored at room temperature; (b) non-irradiated seeds subjected to low temperature (-78 deg C) for a 24 h period. and (c) seeds irradiated by the named doses, stored at room temperature until the time of irradiation. Treated and control seeds were sown in the field. Germination, survival rate and sterility were recorded in M 1 , while in M 2 chlorophyll mutations were scored. Results obtained showed that low temperature modification effect on the various irradiation doses depended on the time of its application; low temperature (-78 deg C) treatment prior to seed irradiation with doses 15, 20 and 30 krad increased germination percentage, plant survival and yield components in M 1 . The post-irradiation treatment did not have a significant effect on gamma-rays; highest protection effect was obtained in case seeds were irradiated at low temperature and then received supplementary treatment at high temperature. In this way the damaging effect of radiation was reduced to a maximum degree; low temperature treatment prior to irradiation with doses of 15 and 20 krad or at the time of irradiation with doses of 15, 20 and 30 krad resulted in a considerably wider chlorophyll mutation spectrum. (author)

Superplastic forging nitride ceramics

Science.gov (United States)

Panda, P.C.; Seydel, E.R.; Raj, R.

1988-03-22

A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

Platinum group metal nitrides and carbides: synthesis, properties and simulation

International Nuclear Information System (INIS)

Ivanovskii, Alexander L

2009-01-01

Experimental and theoretical data on new compounds, nitrides and carbides of the platinum group 4d and 5d metals (ruthenium, rhodium, palladium, osmium, iridium, platinum), published over the past five years are summarized. The extreme mechanical properties of platinoid nitrides and carbides, i.e., their high strength and low compressibility, are noted. The prospects of further studies and the scope of application of these compounds are discussed.

Thermal conductivity enhancement of paraffin by adding boron nitride nanostructures: A molecular dynamics study

International Nuclear Information System (INIS)

Lin, Changpeng; Rao, Zhonghao

2017-01-01

Highlights: • Different contributions to thermal conductivity are obtained. • Thermal conductivity of paraffin could be improved by boron nitride. • Crystallization effect from boron nitride was the key factor. • Paraffin nanocomposite is the desirable candidate for thermal energy storage. - Abstract: While paraffin is widely used in thermal energy storage today, its low thermal conductivity has become a bottleneck for the further applications. Here, we construct two kinds of paraffin-based phase change material nanocomposites through introducing boron nitride (BN) nanostructures into n-eicosane to enhance the thermal conductivity. Molecular dynamics (MD) simulation was adopted to estimate their thermal conductivities and related thermal properties. The results indicate that, after adding BN nanostructures, the latent heat of composites is reduced compared with the pure paraffin and they both show a glass-like thermal conductivity which increases as the temperature rises. This happens because the increasing temperature leads to gradually smaller inconsistency in vibrational density of state along three directions and increasingly significant overlaps among them. Furthermore, by decomposing the thermal conductivity, it is found that the major contribution to the overall thermal conductivity comes from BN nanostructures, while the contribution of n-eicosane is insignificant. Though the thermal conductivity from n-eicosane term is small, it has been improved greatly compared with amorphous state of n-eicosane, mainly due to the crystallization effects from BN nanostructures. This work will provide microscopic views and insights into the thermal mechanism of paraffin and offer effective guidances to enhance the thermal conductivity.

Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

Science.gov (United States)

Mora, M.; Vera, E.; Aperador, W.

2016-02-01

In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers.

Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

International Nuclear Information System (INIS)

Mora, M; Vera, E; Aperador, W

2016-01-01

In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers. (paper)

Properties of minor actinide nitrides

International Nuclear Information System (INIS)

Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

2004-01-01

The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

Effect of gas pressure on active screen plasma nitriding response

International Nuclear Information System (INIS)

Nishimoto, Akio; Nagatsuka, Kimiaki; Narita, Ryota; Nii, Hiroaki; Akamatsu, Katsuya

2010-01-01

An austenitic stainless steel AISI 304 was active screen plasma nitrided using a 304 steel screen to investigate the effect of the gas pressure on the ASPN response. The sample was treated for 18 ks at 723 K in 25% N2 + 75% H2 gases. The gas pressure was changed to 100, 600 and 1200 Pa. The distance between screen and sample was also changed to 10, 30 and 50 mm. The nitrided samples were characterized by appearance observation, surface roughness, optical microscopy, X-ray diffraction, and microhardness testing. After nitriding, polygonal particles with a normal distribution were observed at the center and edges of all the ASPN-treated sample surfaces. Particles on the sample surfaces were finer with an increase in the gas pressure. The nitrided layer with a greater and homogeneous thickness was obtained at a low gas pressure of 100 Pa. (author)

Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

Energy Technology Data Exchange (ETDEWEB)

Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

2014-11-01

We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

One-pot synthesis of reduced graphene oxide@boron nitride nanosheet hybrids with enhanced oxidation-resistant properties

Science.gov (United States)

Sun, Guoxun; Bi, Jianqiang; Wang, Weili; Zhang, Jingde

2017-12-01

Reduced graphene oxide@boron nitride nanosheet (RGO@BNNS) hybrids were prepared for the first time using template-assisted autoclave pyrolysis technique at the temperature as low as 600 °C. The developed method can be scaled into gram-scale synthesis of the material. The BNNSs combine with RGO through van der Waals interplanar interaction without damaging the structures of RGO. Such ultrathin BNNSs on the surface of RGO can serve as high-performance oxidation-resistant coatings in oxidizing atmospheres at high temperatures. The RGO@BNNS hybrids can sustain up to 800 °C over a relatively long period of time.

Formation of zirconium nitride via mechanochemical decomposition of zircon

International Nuclear Information System (INIS)

Puclin, T.; Kaczmarek, W.A.

1996-01-01

In this paper we report some results of the mechanochemical reduction of zircon, and for the first time subsequent reaction with nitrogen to form zirconium nitride (ZrN). This process can be described by the equation: 3ZrSiO 4 + 8Al + 1.5N 2 = 4Al 2 O 3 + 3ZrN + 3Si. Milling was carried out in three steps: 1) low speed grinding of Al+ZrSiO 4 in vacuum, 2) high speed milling to effect the reduction, and 3) continued milling after the addition of nitrogen. Powders produced were examined by X-ray diffraction. The first step showed no reaction occurred during low speed grinding. The second step proved to be a slow reaction without the 'ignition' often seen in other mechanochemical reduction works. The final step was also gradual, and did not always go to full nitridation over the duration of the experiment, giving a product of composition ZrN 0.6 to ZrN l.0 . This is quite acceptable as transition metal nitrides are often non-stoichiometric. These results show that the formation of a useful hard material such as ZrN can be formed from a raw mineral by two stage mechanochemical processing. Further investigations are currently being undertaken to eliminate Fe contamination and produce pure ceramic oxide-nitride composites

Analysis of Low-Temperature Utilization of Geothermal Resources

Energy Technology Data Exchange (ETDEWEB)

Anderson, Brian

2015-06-30

Full realization of the potential of what might be considered “low-grade” geothermal resources will require that we examine many more uses for the heat than traditional electricity generation. To demonstrate that geothermal energy truly has the potential to be a national energy source we will be designing, assessing, and evaluating innovative uses for geothermal-produced water such as hybrid biomass-geothermal cogeneration of electricity and district heating and efficiency improvements to the use of cellulosic biomass in addition to utilization of geothermal in district heating for community redevelopment projects. The objectives of this project were: 1) to perform a techno-economic analysis of the integration and utilization potential of low-temperature geothermal sources. Innovative uses of low-enthalpy geothermal water were designed and examined for their ability to offset fossil fuels and decrease CO2 emissions. 2) To perform process optimizations and economic analyses of processes that can utilize low-temperature geothermal fluids. These processes included electricity generation using biomass and district heating systems. 3) To scale up and generalize the results of three case study locations to develop a regionalized model of the utilization of low-temperature geothermal resources. A national-level, GIS-based, low-temperature geothermal resource supply model was developed and used to develop a series of national supply curves. We performed an in-depth analysis of the low-temperature geothermal resources that dominate the eastern half of the United States. The final products of this study include 17 publications, an updated version of the cost estimation software GEOPHIRES, and direct-use supply curves for low-temperature utilization of geothermal resources. The supply curves for direct use geothermal include utilization from known hydrothermal, undiscovered hydrothermal, and near-hydrothermal EGS resources and presented these results at the Stanford

Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

Science.gov (United States)

Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

2017-07-01

We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

Carbon nitride films synthesized by NH3-ion-beam-assisted deposition

International Nuclear Information System (INIS)

Song, H.W.; Cui, F.Z.; He, X.M.; Li, W.Z.; Li, H.D.

1994-01-01

Carbon nitride thin film films have been prepared by NH 3 -ion-beam-assisted deposition with bombardment energies of 200-800 eV at room temperature. These films have been characterized by transmission electron microscopy. Auger electron spectroscopy and x-ray photoelectron spectroscopy for chemical analysis. It was found that the structure of the films varied with the bombardment energy. In the case of 400 eV bombardment, the tiny crystallites immersed on an amorphous matrix were identified to be β-C 3 N 4 . X-ray photoelectron spectroscopy indicated that some carbon atoms and nitrogen atoms form unpolarized covalent bonds in these films. (Author)

Fabrication and properties of ceramic composites with a boron nitride matrix

International Nuclear Information System (INIS)

Kim, D.P.; Cofer, C.G.; Economy, J.

1995-01-01

Boron nitride (BN) matrix composites reinforced by a number of different ceramic fibers have been prepared using a low-viscosity, borazine oligomer which converts in very high yield to a stable BN matrix when heated to 1,200 C. Fibers including Nicalon (SiC), FP (Al 2 O 3 ), Sumica and Nextel 440 (Al 2 O 3 -SiO 2 ) were evaluated. The Nicalon/BN and Sumica/BN composites displayed good flexural strengths of 380 and 420 MPa, respectively, and modulus values in both cases of 80 GPa. On the other hand, FP/BN and Nextel/BN composites exhibited very brittle behavior. Nicalon fiber with a carbon coating as a buffer barrier improved the strength by 30%, with a large amount of fiber pullout from the BN matrix. In all cases except for Nicalon, the composites showed low dielectric constant and loss

TEM investigation of DC sputtered carbon-nitride-nickel thin films

International Nuclear Information System (INIS)

Safran, G.; Geszti, O.; Radnoczi, G.

2002-01-01

Deposition of carbon nitride (C-N) and carbon-nitride-nickel (C-N-Ni) films onto glass, NaCl and Si(001) substrates was carried out in a dc magnetron sputtering system. Carbon was deposited from high-purity (99.99%) pyrolytic graphite target, 50 mm in diameter, positioned at 10 cm from a resistance-heated substrate holder. C-N-Ni films were grown by a small Ni plate mounted on the graphite target. The base pressure of the deposition chamber was ∼7x10 -7 Torr. Films were grown at a substrate temperature of 20-700 grad C, in pure N 2 at partial pressures of 1.9 -2.2 mTorr and the substrates were held at ground potential. The typical film thickness of 15-30 nm was deposited on all the substrates at a magnetron current of 0.2 and 0.3 A, which resulted in a deposition rate of 1.5-2 nm/s. Structural characterizations were performed by high-resolution transmission electron microscopy (HRTEM) using a JEOL 3010 operated at 300 kV and a 200 kV Philips CM 20 electron microscope equipped with a Ge detector Noran EDS system. The N content of the C-N samples prepared at room temperature was 22-24% by EDS measurement and showed a decrease to 6-7% at elevated temperatures up to 700 grad C. The N concentration in the C-N-Ni films was higher: ∼38% at RT and ∼9% at 700 grad C. The Ni concentration of C-N-Ni samples was 5-6% and 0.3-0.4% in samples deposited at RT and 700 grad C respectively. The low Ni content in the latter is attributed to a decrease of the sticking coefficient of the carbon co-deposited Ni at elevated temperatures. (Authors)

Thermodynamic calculation of the regions of stable existance of niobium nitride phases

International Nuclear Information System (INIS)

Chernyaev, V.V.; Mitrofanov, B.V.; Moiseev, G.K.; 6030000SU)

1987-01-01

Conditions of formation and stable existence of Nb 2 N and NbN niobium nitrides and the general picture of phase transformations in Nb-N system were determined in wide range of temperatures 1400-4000 K and pressures 10 -9 -10 MPa in result of thermodynamic analysis of Nb-N system using the program, realizing algorithm of total potential minimization. The sufficient nitrogen excess is necessary for formation of Nb 2 N and NbN especially. The temperature stability region and the temperature of NbN and Nb 2 N decomposition is shifted to high temperature region with pressure growth. Pressure region where niobium nitrides are stable, is shifted to high pressure region. The obtained calculation data correspond satisfactorily with experimental publication results. This testifies to possibility of using results of thermodynamic calculations for construction of p-T-diagrams of Nb-N system state

Study of the dissolution of uranium nitrides in nitric acid by measuring the isotope ratios, 15N/14N, of the formed products

International Nuclear Information System (INIS)

Hadibi-Olschewski, Nathalie

1991-01-01

The aim of this study was to investigate the dissolution behavior of nitride fuels in nitric acid. The use of nitride fuels in nuclear reactor has many advantages compared with the oxide fuels. One problem in employing nitrides as fuels is the formation of radio-toxic 14 C upon irradiation of natural nitrogen ( 14 N:99.64 pc, 15 N:0.36 pc) in a nuclear reactor ( 14 N (n,p) 14 C reaction). The use of 15 N-enriched fuels avoids these drawbacks. This study was undertaken so as to better understand the mechanisms of the dissolution process and also to follow the distribution of the expensive nitrogen isotope 15 N from the point of view of its behaviour during the recycling process. This study is based on previous work, where the evolution of the nitrogen compounds formed during the dissolution was measured as a function of time for different dissolution parameters. Using 15 N-enriched uranium nitrides or 15 N-enriched nitric acid, two methods were developed to study the influence of the dissolution parameters, nitric acid temperature and concentration, on the 15 N/ 14 N ratios of the nitrogen, nitrogen oxides and ammonium ions utilising a coupled gas-chromatograph/mass spectrometer. The main results are: - similar isotopic composition for NH 4 + and UN; - mixed 14 N/ 15 N composition for N 2 and N 2 O; - similar isotopic composition for NO, NO 2 and HNO 3 ; - no influence of the dissolution parameters on the isotopic composition of the products; an exception maybe made for the N 2 case, which contains more 15 N with increasing acidity and temperature. This work confirms that the first dissolution step is the oxidation of UN with HNO 3 to form NH 4 + and HNO 2 and that HNO 2 has a catalytic role in the dissolution to form other products. And we can conclude that to recycle 15 N, the ammonium ions must be recycled, at least for the case where nitrides are dissolved directly in HNO 3 . (author) [fr

Corrosion-electrochemical characteristics of oxide-carbide and oxide-nitride coatings formed by electrolytic plasma

International Nuclear Information System (INIS)

Tomashov, N.D.; Chukalovskaya, T.V.; Medova, I.L.; Duradzhi, V.N.; Plavnik, G.M.

1990-01-01

The composition, structure, microhardness and corrosion-electrochemical properties of oxide-carbide and oxide-nitride coatings on titanium in 5n H 2 SO 4 , 50 deg, produced by the method of chemical-heat treatment in electrolytic plasma, containing saturation components of nitrogen and carbon, were investigated. It is shown that the coatings produced have increased hardness, possess high corrosion resistance in sulfuric acid solution at increased temperature, as to their electrochemcial behaviour they are similar to titanium carbide and nitride respectively. It is shown that high corrosion resistance is ensured by electrochemical mechanism of the oxide-carbide and oxide-nitride coating protection

Thermodynamics of silicon nitridation - Effect of hydrogen

Science.gov (United States)

Shaw, N. J.; Zeleznik, F. J.

1982-01-01

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Science.gov (United States)

Omar, Al-Zuhairi; Shuhaimi Bin Abu Bakar, Ahmad; Makinudin, Abdullah Haaziq Ahmad; Khudus, Muhammad Imran Mustafa Abdul; Azman, Adreen; Kamarundzaman, Anas; Supangat, Azzuliani

2018-05-01

The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.

performance calculations of gadolinium oxide and boron nitride coated fuel

International Nuclear Information System (INIS)

Tanker, E.; Uslu, I.; Disbudak, H.; Guenduez, G.

1997-01-01

A comparative study was performed on the behaviour of natural uranium dioxide-gadolinium oxide mixture fuel and boron nitride coated low enriched fuel in a pressurized water reactor. A fuel element containing one burnable poison fuel pins was modeled with the computer code WIMS, and burn-up dependent critically, fissile isotope inventory and two dimensional power distribution were obtained. Calculations were performed for burnable poison fuels containing 5% and 10% gadolinium oxide and for those coated with 1μ,5μ and 10μ of boron nitride. Boron nitride coating was found superior to gadolinium oxide on account of its smoother criticality curve, lower power peaks and insignificant change in fissile isotope content

Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

International Nuclear Information System (INIS)

Ding Yanfang; Zhu Ziqiang; Zhu Ming; Lin Chenglu

2006-01-01

Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (MN), which has a thermal conductivity that is about 200 times higher than that of SiO 2 (320 W·m -1 ·K -1 versus 1.4 W·m -1 ·K -l ). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AIN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions. (authors)

Friction and Wear of Unlubricated NiTiHf with Nitriding Surface Treatments

Science.gov (United States)

Stanford, Malcolm K.

2018-01-01

The unlubricated friction and wear properties of the superelastic materials NiTi and NiTiHf, treated by either gas nitriding or plasma nitriding, have been investigated. Pin on disk testing of the studied materials was performed at sliding speeds from 0.01 to 1m/s at normal loads of 1, 5 or 10N. For all of the studied friction pairs (NiTiHf pins vs. NiTi and NiTiHf disks) over the given parameters, the steady-state coefficients of friction varied from 0.22 to 1.6. Pin wear factors ranged from approximately 1E-6 against the NiTiHf and plasma nitrided disks to approximately 1E-4 for the gas nitrided disks. The plasma nitrided disks provided wear protection in several cases and tended to wear by adhesion. The gas nitrided treatment generated the most pin wear but had essentially no disk wear except at the most severe of the studied conditions (1N load and 1m/s sliding speed). The results of this study are expected to provide guidance for design of components such as gears and fasteners.

Low-loss and tunable near-zero-epsilon titanium nitride

Science.gov (United States)

Popović, M.; Novaković, M.; Schmidt, E.; Schöppe, P.; Bibić, N.; Ronning, C.; Rakočević, Z.

2017-10-01

Titanium nitride (TiN) has emerged as alternative plasmonic material in the visible and near-infrared spectral range due to its metallic properties. We studied the influence of silver ion implantation (fluence range from 0.5 × 1016-6 × 1016 ions/cm2) on the structural and optical properties of reactively sputtered 260 nm thick TiN films. The columnar structure was partially destroyed by the irradiation and up to 5 at.% of Ag was incorporated into the films within the projected ion range. The formation of cubic Ag nanoparticles with size of 1-2 nm was observed by high resolution transmission electron microscopy and subsequent fast Fourier transform analysis. This presence of Ag within the TiN matrix drastically changes both the real and imaginary component of the dielectric function and provides low optical losses. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the silver influence on the optical behavior of TiN. With increasing ion fluence, the unscreened plasma frequency decreased and broadening increased. The energy, strength and broadening of the interband transitions were studied with respect to the silver ion fluence and correlated with the microstructural changes induced in TiN films.

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Pansila, P. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Kanomata, K. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Miura, M. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Ahmmad, B.; Kubota, S. [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); CREST, Japan Science and Technology Agency, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); Hirose, F., E-mail: fhirose@yz.yamagata-u.ac.jp [Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510 (Japan); CREST, Japan Science and Technology Agency, 4-3-16 Jonan, Yonezawa 992-8510 (Japan)

2015-12-01

Highlights: • We discuss the reaction mechanism of the low temperature GaN ALD. • The plasma-excited NH{sub 3} is effective in the nitridation of the TMG saturated GaN surface with surface temperatures in excess of 100 °C. • The temperature controlled ALD of GaN is examined using RT-TMG adsorption and plasma-excited NH{sub 3} treatment with the temperature of 115 °C. - Abstract: Fundamental surface reactions in the atomic layer deposition of GaN with trimethylgallium (TMG) and plasma-excited NH{sub 3} are investigated by multiple-internal-reflection infrared absorption spectroscopy (MIR-IRAS) at surface temperatures varying from room temperature (RT) to 400 °C. It is found that TMG is saturated at RT on GaN surfaces when the TMG exposure exceeds 8 × 10{sup 4} Langmuir (L), where 1 L corresponds to 1.33 × 10{sup −4} Pa s (or 1.0 × 10{sup −6} Torr s), and its saturation density reaches the maximum value at RT. Nitridation with the plasma-excited NH{sub 3} on the TMG-saturated GaN surface is investigated by X-ray photoelectron spectroscopy (XPS). The nitridation becomes effective at surface temperatures in excess of 100 °C. The reaction models of TMG adsorption and nitridation on the GaN surface are proposed in this paper. Based on the surface analysis, a temperature-controlled ALD process consisting of RT-TMG adsorption and nitridation at 115 °C is examined, where the growth per cycle of 0.045 nm/cycle is confirmed. XPS analysis indicates that all N atoms are bonded as GaN. Atomic force microscopy indicates an average roughness of 0.23 nm. We discuss the reaction mechanism of GaN ALD in the low-temperature region at around 115 °C with TMG and plasma-excited NH{sub 3}.

The bipolar plate of AISI 1045 steel with chromized coatings prepared by low-temperature pack cementation for proton exchange membrane fuel cell

Science.gov (United States)

Bai, Ching-Yuan; Wen, Tse-Min; Hou, Kung-Hsu; Ger, Ming-Der

The low-temperature pack chromization, a reforming pack cementation process, is employed to modify AISI 1045 steel for the application of bipolar plates in PEMFC. The process is conducted to yield a coating, containing major Cr-carbides and minor Cr-nitrides, on the substrate in view of enhancing the steel's corrosion resistance and lowering interfacial contact resistance between the bipolar plate and gas diffusion layer. Electrical discharge machining and rolling approach are used as the pretreatment to produce an activated surface on the steel before pack chromization process to reduce operating temperatures and increase deposition rates. The rolled-chromized steel shows the lowest corrosion current density, 3 × 10 -8 A cm -2, and the smallest interfacial contact resistance, 5.9 mΩ cm 2, at 140 N cm -2 among all tested steels. This study clearly states the performance of 1045 carbon steel modified by activated and low-temperature pack chromization processes, which possess the potential to be bipolar plates in the application of PEMFC.

New Stainless Steel Alloys for Low Temperature Surface Hardening?

DEFF Research Database (Denmark)

Christiansen, Thomas Lundin; Dahl, Kristian Vinter; Somers, Marcel A. J.

2015-01-01

The present contribution showcases the possibility for developing new surface hardenable stainless steels containing strong nitride/carbide forming elements (SNCFE). Nitriding of the commercial alloys, austenitic A286, and ferritic AISI 409 illustrates the beneficial effect of having SNCFE presen...

β-Molybdenum nitride: synthesis mechanism and catalytic response in the gas phase hydrogenation of p-chloronitrobenzene

NARCIS (Netherlands)

Cárdenas-Lizana, F.; Gómez-Quero, S.; Perret, N.; Kiwi-Minsker, L.; Keane, M.A.

2011-01-01

A temperature programmed treatment of MoO3 in flowing N2 + H2 has been employed to prepare β-phase molybdenum nitride (β-Mo2N) which has been used to promote, for the first time, the catalytic hydrogenation of p-chloronitrobenzene. The reduction/nitridation synthesis steps have been monitored in

Formation of oriented nitrides by N+ ion implantation in iron single crystals

International Nuclear Information System (INIS)

Costa, A.R.G.; Silva, R.C. da; Ferreira, L.P.; Carvalho, M.D.; Silva, C.; Franco, N.; Godinho, M.

2014-01-01

Iron single crystals were implanted with nitrogen at room temperature, with a fluence of 5×10 17 cm −2 and 50 keV energy, to produce iron nitride phases and characterize the influence of the crystal orientation. The stability and evolution of the nitride phases and diffusion of implanted nitrogen were studied as a function of successive annealing treatments at 250 °C in vacuum. The composition, structure and magnetic properties were characterized using RBS/channeling, X-Ray Diffraction, Magnetic Force Microscopy, Magneto-optical Kerr Effect and Conversion Electron Mössbauer Spectroscopy. In the as-implanted state the formation of Fe 2 N phase was clearly identified in all single crystals. This phase is not stable at 250 °C and annealing at this temperature promotes the formation of ε-Fe 3 N, or γ′-Fe 4 N, depending on the orientation of the substrate. - Highlights: • Oriented magnetic iron nitrides were obtained by nitrogen implantation into iron single crystals. • The stable magnetic nitride phase at 250 °C depends on the orientation of the host single crystal, being γ'-Fe 4 N or ε-Fe 3 N. • The easy magnetization axis was found to lay in the (100) plane for cubic γ'-Fe 4 N and out of (100) plane for hexagonal ε-Fe 3 N

Peculiar features in formation of diffusion layer properties during nitridation

International Nuclear Information System (INIS)

Gulyaev, A.P.; Konoval'tsev, V.I.; Nikitin, V.V.

1983-01-01

Peculiarities of the formation of multiphase nitridated layer at samples of commercial iron, 20, 40Kh and 38KhMYu6A steels are studied with the help of high-temperature methods of investigation (X-ray diffraction analysis, hardening and thickness measuring). It is found out that during the saturation the solid solution oversaturated with nitrogen is formed; some increase in hardness in the process is a result of solid solution hardening and the increase of thickness of nitride zone; however the main growth of the layer hardness is achieved during the cooling as a result of α phase precipitating hardening

Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

Science.gov (United States)

Baumgartner, H. R.

1978-01-01

Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

International Nuclear Information System (INIS)

Qi, B.; Ólafsson, S.; Göthelid, M.; Gislason, H.P.; Agnarsson, B.

2013-01-01

The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 × 7 surface periodicity at 0.07 ML and a single √(3)×√(3) phase at 0.3 ML around 440–470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 × 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH 3 at ∼ 480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets. - Highlights: ► Formation and nitridation of indium (In) droplets on Si (111) were studied. ► In droplets evolved with the 4 × 1-In cluster chains at 0.82 monolayer (ML). ► In droplets grow in density and lateral size with In coverage increased to 2.3 ML. ► The multi-domain In phases were formed at 2.3 ML. ► Nitridation of In droplets is accompanied by a disintegration of layering In phase

Plasma-nitriding assisted micro-texturing into stainless steel molds

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Micro-texturing has grown up to be one of the most promising procedures. This related application required for large-area, fine micro-texturing onto the stainless steel mold materials. A new method other than laser-machining, micro-milling or micro-EDM was awaited for further advancement of this micro-texturing. In the present paper, a plasma nitriding assisted micro-texturing was developed to make various kinds of micro-patterns onto the martensitic stainless steels. First, original patterns were printed onto the surface of substrate by using the ink-jet printer. Then, the masked substrate was subjected to high density plasma nitriding; the un-masked surfaces were nitrided to have higher hardness. This nitrided substrate was further treated by sand-blasting to selectively dig the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel substrate was fabricated as a mold to duplicate these micro-patterns onto the work materials. The spatial resolution and depth profile controllability of this plasma nitriding assisted micro-texturing was investigated for variety of initial micro-patterns. The original size and dimension of initial micro-patterns were precisely compared with the three dimensional geometry of micro-textures after blasting treatment. The plastic cover case for smart cellular phones was employed to demonstrate how useful this processing is in practice.

Replacing critical radiators to increase the potential to use low-temperature district heating – A case study of 4 Danish single-family houses from the 1930s

International Nuclear Information System (INIS)

Østergaard, Dorte Skaarup; Svendsen, Svend

2016-01-01

Low-temperature district heating is a promising technology for providing homes with energy-efficient heating in the future. However, it is of great importance to maintain thermal comfort in existing buildings when district heating temperatures are lowered. This case study evaluated the actual radiator sizes and heating demands in 4 existing Danish single-family houses from the 1930s. A year-long dynamic simulation was performed for each of the houses to evaluate the potential to lower the heating system temperatures. The results indicate that there is a large potential to use low-temperature district heating in existing single-family houses. In order to obtain the full potential of low-temperature district heating, critical radiators must be replaced. Based on a novel method, a total of nine radiators were identified to be critical to ensure thermal comfort and low return temperatures in two of the case-houses. If these radiators were replaced it would be possible to lower the average heating system temperatures to 50 °C/27 °C in all four houses. - Highlights: • Comparison of dynamically calculated heat demands and radiator sizes. • Method for identification and evaluation of critical radiators was tested. • Existing houses can be heated with low-temperature heating for most of the year. • Replacing critical radiators helps ensure comfort and low return temperatures.

Growth of cubic GaN on a nitrided AlGaAs (001) substrate by using hydried vapor phase epitaxy

International Nuclear Information System (INIS)

Lee, H. J.; Yang, M.; Ahn, H. S.; Kim, K. H.; Yi, J. Y.; Jang, K. S.; Chang, J. H.; Kim, H. S.; Cho, C. R.; Kim, S. W.

2006-01-01

GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy (HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN layer. Nitridation of the AlGaAs surface was performed in a NH 3 atmosphere at a temperature range of 550 - 700 .deg. C. GaN layers were grown at different growth rates on the nitrided AlGaAs substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence (CL) and X-ray diffraction (XRD) were carried out.

Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

International Nuclear Information System (INIS)

Louring, S.; Madsen, N.D.; Berthelsen, A.N.; Christensen, B.H.; Almtoft, K.P.; Nielsen, L.P.; Bøttiger, J.

2013-01-01

Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

Microstructure of Nitrided Aluminum Alloys Using an Electron-Beam-Excited-Plasma (EBEP)

Institute of Scientific and Technical Information of China (English)

L. Liu; A. Yamamoto; T. Hishida; H. Shoyama; T. Hara; T. Hara

2004-01-01

Nitriding of surface of aluminum alloys was carried out with using an electron-beam-excited-plasma (EBEP)technique. The EBEP is sustained by electron impact ionization with energetic electron beam. Two kinds of substrates,aluminum alloys AA5052 and AA5083, were exposed to the down flow of EBEP source at 843 K for 45min. The specimens were characterized with respect to following properties: crystallographic structure (XRD), morphology (SEM) and the cross sectional microstructures of the nitrided layer was observed using a scanning electron microscopy (SEM). There are some Al2O3 particles on the surface of the nitrided AA5052 and AA5083. The AIN layers were formed on the substrates with the thickness of 4.5 μ m for AA5052 and 0.5 μ m for AA5083. A relatively uniform nitrided surface layer composed of AIN can be observed on the AA5052 substrate. The grains size near the interfaces between the substrate and AIN layer were smaller than that near the surface. On the surface of AIN layer, the concentration of nitrogen was high and in the middle of AIN layer it had a constant concentration like the aluminum and the concentration was decreased with approaching to the interface. On the surface of nitrided AA5083, a uniform AIN layer was not formed as the reason for the high nitriding temperature.

The combined effects of Fe and H2 on the nitridation of silicon

Science.gov (United States)

Shaw, N. J.

1982-01-01

In view of the support offered by previous work for the suggestion that Fe may affect alpha-Si3N4 formation and microstructural development, a two-part study was conducted to differentiate the effects of H2 and Fe in, first, the nitridation of pure and of Fe-containing powder in N2 and N2-4% H2, and then the nitridation of (1 1 1) Si single crystal wafers with and without Fe powder on the surface. The degree of nitridation is most strongly affected by H2 at 1200 C, but by Fe at 1375 C, where Fe-containing samples in either atmosphere were almost completely nitrided. While neither H2 nor Fe alone changed the ratio of alpha-Si3N4 to beta-Si3N4, the combination of H2 and Fe increased it at both temperatures.

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

Jimy Encomendero

2017-10-01

Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

Low Temperature District Heating for Future Energy Systems

DEFF Research Database (Denmark)

Ford, Rufus; Pietruschka, Dirk; Sipilä, Kari

participants being VTT Technical Research Centre of Finland (VTT), Technical University of Denmark (DTU), Norwegian University of Science and Technology (NTNU), Stuttgart Technology University of Applied Sciences (HFT) and SSE Enterprise in United Kingdom. The demonstration cases described in the report......This report titled “Case studies and demonstrations” is the subtask D report of the IEA DHC|CHP Annex TS1 project “Low Temperature District Heating for Future Energy Systems” carried out between 2013 and 2016. The project was led by Fraunhofer Institute for Building Physics (IBP) with the other...... include examples on low temperature district heating systems, solar heating in a district heating system, heat pump based heat supply and energy storages for both peak load management and for seasonal heat storage. Some demonstrations have been implemented while others are at planning phase...

Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis

International Nuclear Information System (INIS)

Minj, Albert; Cavalcoli, Daniela; Cavallini, Anna; Gamarra, Piero; Di Forte Poisson, Marie-Antoinette

2013-01-01

Here, we report on significant material information provided by semi-contact phase-images in a wide range of hard III-nitride surfaces. We show that the phase contrast, which is fundamentally related to the energy dissipation during tip–surface interaction, is sensitive to the crystalline nature of the material and thus could potentially be used to determine the crystalline quality of thin nitride layers. Besides, we found that the structural defects, especially threading dislocations and cracks, act as selective sites where energy mainly dissipates. Consequently, in nitrides defects with very low dimensions can actually be imaged with phase-contrast imaging. (paper)

Low temperature RF plasma nitriding of self-organized TiO2 nanotubes for effective bandgap reduction

Science.gov (United States)

Bonelli, Thiago Scremin; Pereyra, Inés

2018-06-01

Titanium dioxide is a widely studied semiconductor material found in many nanostructured forms, presenting very interesting properties for several applications, particularly photocatalysis. TiO2 nanotubes have a high surface-to-volume ratio and functional electronic properties for light harvesting. Despite these manifold advantages, TiO2 photocatalytic activity is limited to UV radiation due to its large band gap. In this work, TiO2 nanotubes produced by electrochemical anodization were submitted to plasma nitriding processes in a PECVD reactor. The plasma parameters were evaluated to find the best conditions for gap reduction, in order to increase their photocatalytic activity. The pressure and RF power density were varied from 0.66 to 2.66 mbar and 0.22 to 3.51 W/cm2 respectively. The best gap reduction, to 2.80 eV, was achieved using a pressure of 1.33 mbar and 1.75 W/cm2 RF power at 320 °C, during a 2-h process. This leads to a 14% reduction in the band gap value and an increase of 25.3% in methylene blue reduction, doubling the range of solar photons absorption from 5 to 10% of the solar spectrum.

Graphitic carbon nitride: Synthesis, characterization and photocatalytic decomposition of nitrous oxide

International Nuclear Information System (INIS)

Praus, Petr; Svoboda, Ladislav; Ritz, Michal; Troppová, Ivana; Šihor, Marcel; Kočí, Kamila

2017-01-01

Graphitic carbon nitride (g-C_3N_4) was synthetized by condensation of melamine at the temperatures of 400–700 °C in air for 2 h and resulting products were characterized and finally tested for the photocatalytic decomposition of nitrous oxide. The characterization methods were elemental analysis, UV–Vis diffuse reflectance spectroscopy (DRS), photoluminescence (PL), Fourier transform infrared (FTIR) and Raman spectroscopy, measurement of specific surface area (SSA), X-ray powder diffraction (XRD), scanning (SEM) and transmission (TEM) electron microscopy. The XRD patterns, FTIR and Raman spectra proved the presence of g-C_3N_4 at above 550 °C but the optimal synthesis temperature of 600–650 °C was found. Under these conditions graphitic carbon nitride of the overall empirical composition of C_6N_9H_2 was formed. At lower temperatures g-C_3N_4 with a higher content of hydrogen was formed but at higher temperatures g-C_3N_4 was decomposed. At the temperatures above 650 °C, its exfoliation was observed. The photocatalytic experiments showed that the activity of all the samples synthetized at 400–700 °C was very similar, that is, within the range of experimental error (5 %). The total conversion of N_2O reached about 43 % after 14 h. - Highlights: • Graphitic carbon nitride (g-C_3N_4) was thermally synthetized from melamine in the range of 400–700 °C. • The optimal temperature was determined at 600–650 °C. • All synthesis products were properly characterized by physico-chemical methods. • Exfoliation of g-C_3N_4 at above 600 °C was observed. • g-C_3N_4 was used for the photocatalytic decomposition of N_2O.

Changing in Fatigue Life of 300 M Bainitic Steel After Laser Carburizing and Plasma Nitriding

Directory of Open Access Journals (Sweden)

Abdalla Antonio J.

2018-01-01

Full Text Available In this work 300M steel samples is used. This high-strength steel is used in aeronautic and aerospace industry and other structural applications. Initially the 300 M steel sample was submitted to a heat treatment to obtain a bainític structure. It was heated at 850 °C for 30 minutes and after that, cooled at 300 °C for 60 minutes. Afterwards two types of surface treatments have been employed: (a using low-power laser CO2 (125 W for introducing carbon into the surface and (b plasma nitriding at a temperature of 500° C for 3 hours. After surface treatment, the metallographic preparation was carried out and the observations with optical and electronic microscopy have been made. The analysis of the coating showed an increase in the hardness of layer formed on the surface, mainly, among the nitriding layers. The mechanical properties were analyzed using tensile and fatigue tests. The results showed that the mechanical properties in tensile tests were strongly affected by the bainitic microstructure. The steel that received the nitriding surface by plasma treatment showed better fatigue behavior. The results are very promising because the layer formed on steel surface, in addition to improving the fatigue life, still improves protection against corrosion and wear.

Processing and properties of solid state nitrided stainless steels

International Nuclear Information System (INIS)