Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Energy Technology Data Exchange (ETDEWEB)

Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

2017-11-15

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Science.gov (United States)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

A new contact electric resistance technique for in-situ measurement of the electric resistance of surface films on metals in electrolytes at high temperatures and pressures

International Nuclear Information System (INIS)

Saario, T.; Marichev, V.A.

1993-01-01

Surface films play a major role in corrosion assisted cracking. A new Contact Electric Resistance (CER) method has been recently developed for in situ measurement of the electric resistance of surface films. The method has been upgraded for high temperature high pressure application. The technique can be used for any electrically conductive material in any environment including liquid, gas or vacuum. The technique has been used to determine in situ the electric resistance of films on metals during adsorption of water and anions, formation and destruction of oxides and hydrides, electroplating of metals and to study the electric resistance of films on semiconductors. The resolution of the CER technique is 10 -9 Ω, which corresponds to about 0.03 monolayers of deposited copper during electrochemical deposition Cu/Cu 2+ . Electric resistance data can be measured with a frequency of the order of one hertz, which enables one to follow in situ the kinetics of surface film related processes. The kinetics of these processes and their dependence on the environment, temperature, pH and electrochemical potential can be investigated

Electro-thermal analysis of contact resistance

Science.gov (United States)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

Electrical contacts principles and applications

CERN Document Server

Slade, Paul G

2013-01-01

Covering the theory, application, and testing of contact materials, Electrical Contacts: Principles and Applications, Second Edition introduces a thorough discussion on making electric contact and contact interface conduction; presents a general outline of, and measurement techniques for, important corrosion mechanisms; considers the results of contact wear when plug-in connections are made and broken; investigates the effect of thin noble metal plating on electronic connections; and relates crucial considerations for making high- and low-power contact joints. It examines contact use in switch

Three-dimensional direct laser written graphitic electrical contacts to randomly distributed components

Science.gov (United States)

Dorin, Bryce; Parkinson, Patrick; Scully, Patricia

2018-04-01

The development of cost-effective electrical packaging for randomly distributed micro/nano-scale devices is a widely recognized challenge for fabrication technologies. Three-dimensional direct laser writing (DLW) has been proposed as a solution to this challenge, and has enabled the creation of rapid and low resistance graphitic wires within commercial polyimide substrates. In this work, we utilize the DLW technique to electrically contact three fully encapsulated and randomly positioned light-emitting diodes (LEDs) in a one-step process. The resolution of the contacts is in the order of 20 μ m, with an average circuit resistance of 29 ± 18 kΩ per LED contacted. The speed and simplicity of this technique is promising to meet the needs of future microelectronics and device packaging.

Graphene as a protective coating and superior lubricant for electrical contacts

Science.gov (United States)

Berman, Diana; Erdemir, Ali; Sumant, Anirudha V.

2014-12-01

Potential for graphene to be used as a lubricant for sliding electrical contacts has been evaluated. Graphene, being deposited as a sporadic flakes on the gold substrate sliding against titanium nitride ball shows not only significant improvement in tribological behavior by reducing both friction (by factor of 2-3) and wear (by 2 orders) but also, even more importantly, demonstrates stable and low electrical resistance at the sliding contacts undergoing thousands of sliding passes regardless of the test environment (i.e., both in humid and dry conditions).

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Application and analysis of palladium vapor deposited on stainless steel for high temperature electrical contacts

International Nuclear Information System (INIS)

Jodeh, S.

2008-01-01

Using electron beam evaporation. Pd thin films of 300 nm thickness have been deposited on 301 stainless steel for high temperature electrical contact studies. The structure and compost ion of the helms were studied in detail x-ray diffraction (XRD), scanning electron microscopy (Sem), electron probe microanalysis (EPMA), and x-ray photoelectron spectroscopy (XP S) with sputter depth profiling. The contact properties such as contact resistance, fretting wear resistance, and thermal stability have been measured.The contact resistance rem ins low after heat-aging in air for 168 h at 150 and 200 deg., but increases significantly after heat-aging at 340 deg.. This increase in contact resistance is caused by the formation of about a 27 nm (1 μin.) thick Pdo. In contrast, the thickness of the Pdo is too thin to cause measurable contact resistance increases after heat-aging at 150 and 200 deg.. The fretting wear resistance of Pd coated 301 stainless steel is better than that of electroplated Sn of ser veal thousand nm thickness. Thus, vapor deposited Pd coating on 301 stainless steel may replace electroplated Sn for electrical contact application at elevated temperatures.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.; Bullock, James; Jeangros, Quentin; Samundsett, Christian; Wan, Yimao; Cui, Jie; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Javey, Ali; Cuevas, Andres

2017-01-01

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.

2017-02-04

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

Numerical Modeling of Electrical Contact Conductance of Rough Bodies

Directory of Open Access Journals (Sweden)

M. V. Murashov

2015-01-01

Full Text Available Since the beginning of the 20th century to the present time, efforts have been made to develop a model of the electrical contact conductance. The development of micro- and nanotechnologies make contact conductance problem more essential. To conduct borrowing from a welldeveloped thermal contact conductance models on the basis of thermal and electrical conductivity analogy is often not possible due to a number of fundamental differences. While some 3Dmodels of rough bodies deformation have been developed in one way or another, a 3D-model of the electrical conductance through rough bodies contact is still not. A spatial model of electrical contact of rough bodies is proposed, allows one to calculate the electrical contact conductance as a function of the contact pressure. Representative elements of the bodies are parallelepipeds with deterministic roughness on the contacting surfaces. First the non-linear elastic-plastic deformation of rough surface under external pressure is solved using the finite element software ANSYS. Then the solution of electrostatic problem goes on the same finite element mesh. Aluminum AD1 is used as the material of the contacting bodies with properties that account for cold work hardening of the surface. The numerical model is built within the continuum mechanics and nanoscale effects are not taken into account. The electrical contact conductance was calculated on the basis of the concept of electrical resistance of the model as the sum of the electrical resistances of the contacting bodies and the contact itself. It was assumed that there is no air in the gap between the bodies. The dependence of the electrical contact conductance on the contact pressure is calculated as well as voltage and current density distributions in the contact bodies. It is determined that the multi-asperity contact mode, adequate to real roughness, is achieved at pressures higher than 3MPa, while results within the single contact spot are

Contact resistance problems applying ERT on low bulk density forested stony soils. Is there a solution?

Science.gov (United States)

Deraedt, Deborah; Touzé, Camille; Robert, Tanguy; Colinet, Gilles; Degré, Aurore; Garré, Sarah

2015-04-01

Electrical resistivity tomography (ERT) has often been put forward as a promising tool to quantify soil water and solute fluxes in a non-invasive way. In our experiment, we wanted to determine preferential flow processes along a forested hillslope using a saline tracer with ERT. The experiment was conducted in the Houille watershed, subcatchment of the Meuse located in the North of Belgian Ardennes (50° 1'52.6'N, 4° 53'22.5'E). The climate is continental but the soil under spruce (Picea abies (L.) Karst.) and Douglas fire stand (Pseudotsuga menziesii (Mirb.) Franco) remains quite dry (19% WVC in average) during the whole year. The soil is Cambisol and the parent rock is Devonian schist covered with variable thickness of silty loam soil. The soil density ranges from 1.13 to 1.87 g/cm3 on average. The stone content varies from 20 to 89% and the soil depth fluctuates between 70 and 130 cm. The ERT tests took place on June 1st 2012, April 1st, 2nd and 3rd 2014 and May 12th 2014. We used the Terrameter LS 12 channels (ABEM, Sweden) in 2012 test and the DAS-1 (Multi-Phase Technologies, United States) in 2014. Different electrode configurations and arrays were adopted for different dates (transect and grid arrays and Wenner - Schlumberger, Wenner alpha and dipole-dipole configurations). During all tests, we systematically faced technical problems, mainly related to bad electrode contact. The recorded data show values of contact resistance above 14873 Ω (our target value would be below 3000 Ω). Subsequently, we tried to improve the contact by predrilling the soil and pouring water in the electrode holes. The contact resistance improved to 14040 Ω as minimum. The same procedure with liquid mud was then tested to prevent quick percolation of the water from the electrode location. As a result, the lower contact resistance dropped to 11745 Ω. Finally, we applied about 25 litre of saline solution (CaCl2, 0.75g/L) homogeneously on the electrode grid. The minimum value of

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

Energy Technology Data Exchange (ETDEWEB)

Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

2009-05-29

The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure

KAUST Repository

Qaisi, Ramy M.; Smith, Casey; Ghoneim, Mohamed T.; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-01-01

We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity 1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics. © 2013 IEEE.

Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure

KAUST Repository

Qaisi, Ramy M.

2013-08-01

We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity 1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics. © 2013 IEEE.

An analytical model and parametric study of electrical contact resistance in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin; Zhang, Lianhong [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2009-04-15

This paper presents an analytical model of the electrical contact resistance between the carbon paper gas diffusion layers (GDLs) and the graphite bipolar plates (BPPs) in a proton exchange membrane (PEM) fuel cell. The model is developed based on the classical statistical contact theory for a PEM fuel cell, using the same probability distributions of the GDL structure and BPP surface profile as previously described in Wu et al. [Z. Wu, Y. Zhou, G. Lin, S. Wang, S.J. Hu, J. Power Sources 182 (2008) 265-269] and Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Results show that estimates of the contact resistance compare favorably with experimental data by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Factors affecting the contact behavior are systematically studied using the analytical model, including the material properties of the two contact bodies and factors arising from the manufacturing processes. The transverse Young's modulus of chopped carbon fibers in the GDL and the surface profile of the BPP are found to be significant to the contact resistance. The factor study also sheds light on the manufacturing requirements of carbon fiber GDLs for a better contact performance in PEM fuel cells. (author)

Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2009-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

Resistance switching in silver - manganite contacts

International Nuclear Information System (INIS)

Gomez-Marlasca, F; Levy, P

2009-01-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Resistance switching in silver - manganite contacts

Energy Technology Data Exchange (ETDEWEB)

Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

2009-05-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Instrument for measuring metal-thermoelectric semiconductor contact resistence

International Nuclear Information System (INIS)

Lanxner, M.; Nechmadi, M.; Meiri, B.; Schildkraut, I.

1979-02-01

An instrument for measuring electrical, metal-thermoelectric semiconductor contact resistance is described. The expected errors of measurement are indicated. The operation of the instrument which is based on potential traversing perpendicularly to the contact plane is illustrated for the case of contacts of palladium and bismuth telluride-based thermoelectric material

Characterization of Deposited Platinum Contacts onto Discrete Graphene Flakes for Electrical Devices

KAUST Repository

Holguin Lerma, Jorge A.

2016-05-03

For years, electron beam induced deposition has been used to fabricate electrical contacts for micro and nanostructures. The role of the contact resistance is key to achieve high performance and efficiency in electrical devices. The present thesis reports on the electrical, structural and chemical characterization of electron beam deposited platinum electrodes that are exposed to different steps of thermal annealing and how they are used in four-probe devices of ultrathin graphite (uG) flakes (<100nm thickness). The device integration of liquid phase exfoliated uG is demonstrated, and its performance compared to devices made with analogous mechanically exfoliated uG. For both devices, similar contact resistances of ~2kΩ were obtained. The electrical measurements confirm a 99.5% reduction in contact resistance after vacuum thermal annealing at 300 °C. Parallel to this, Raman characterization confirms the formation of a nanocrystalline carbon structure over the electrode. While this could suggest an enhancement of the electrical transport in the device, an additional thermal annealing step in air at 300 °C, promoted the oxidation and removal of the carbon shell and confirmed that the contact resistance remained the same. Overall this shows that the carbon shell along the electrode has no significant role in the contact resistance. Finally, the challenges based on topographical analysis of the deposited electrodes are discussed. Reduction of the electrode’s height down to one-third of the initial value, increased surface roughness, formation of voids along the electrodes and the onset of platinum nanoparticles near the area of deposition, represent a challenge for future work.

Studies of electrical properties of low-resistivity sandstones based on digital rock technology

Science.gov (United States)

Yan, Weichao; Sun, Jianmeng; Zhang, Jinyan; Yuan, Weiguo; Zhang, Li; Cui, Likai; Dong, Huaimin

2018-02-01

Electrical properties are important parameters to quantitatively calculate water saturation in oil and gas reservoirs by well logging interpretation. It is usual that oil layers show high resistivity responses, while water layers show low-resistivity responses. However, there are low-resistivity oil zones that exist in many oilfields around the world, leading to difficulties for reservoir evaluation. In our research, we used digital rock technology to study different internal and external factors to account for low rock resistivity responses in oil layers. We first constructed three-dimensional digital rock models with five components based on micro-computed tomography technology and x-ray diffraction experimental results, and then oil and water distributions in pores were determined by the pore morphology method. When the resistivity of each component was assigned, rock resistivities were calculated by using the finite element method. We collected 20 sandstone samples to prove the effectiveness of our numerical simulation methods. Based on the control variate method, we studied the effects of different factors on the resistivity indexes and rock resistivities. After sensitivity analyses, we found the main factors which caused low rock resistivities in oil layers. For unfractured rocks, influential factors arranged in descending order of importance were porosity, clay content, temperature, water salinity, heavy mineral, clay type and wettability. In addition, we found that the resistivity index could not provide enough information to identify a low-resistivity oil zone by using laboratory rock-electric experimental results. These results can not only expand our understandings of the electrical properties of low-resistivity rocks from oil layers, but also help identify low-resistivity oil zones better.

Experimental Characterization and Modeling of Thermal Contact Resistance of Electric Machine Stator-to-Cooling Jacket Interface Under Interference Fit Loading

Energy Technology Data Exchange (ETDEWEB)

Cousineau, Justine E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Chieduko, Victor [UQM Technologies, Inc.; Lall, Rajiv [UQM Technologies, Inc.; Gilbert, Alan [UQM Technologies, Inc.

2018-05-08

Cooling of electric machines is a key to increasing power density and improving reliability. This paper focuses on the design of a machine using a cooling jacket wrapped around the stator. The thermal contact resistance (TCR) between the electric machine stator and cooling jacket is a significant factor in overall performance and is not well characterized. This interface is typically an interference fit subject to compressive pressure exceeding 5 MPa. An experimental investigation of this interface was carried out using a thermal transmittance setup using pressures between 5 and 10 MPa. The results were compared to currently available models for contact resistance, and one model was adapted for prediction of TCR in future motor designs.

Effect of different atmospheres on the electrical contact performance of electronic components under fretting wear

Science.gov (United States)

Liu, Xin-Long; Cai, Zhen-Bing; Cui, Ye; Liu, Shan-Bang; Xu, Xiao-Jun; Zhu, Min-Hao

2018-04-01

The effects of oxide etch on the surface morphology of metals for industrial application is a common cause of electrical contacts failure, and it has becomes a more severe problem with the miniaturization of modern electronic devices. This study investigated the effects of electrical contact resistance on the contactor under three different atmospheres (oxygen, air, and nitrogen) based on 99.9% copper/pogo pins contacts through fretting experiments. The results showed the minimum and stable electrical contact resistance value when shrouded in the nitrogen environment and with high friction coefficient. The rich oxygen environment promotes the formation of cuprous oxide, thereby the electrical contact resistance increases. Scanning electron microscope microscopy and electron probe microanalysis were used to analyze the morphology and distribution of elements of the wear area, respectively. The surface product between contacts was investigated by x-ray photoelectron spectroscopy analysis to explain the different electrical contact properties of the three tested samples during fretting.

Temperature dependence of contact resistance at metal/MWNT interface

Energy Technology Data Exchange (ETDEWEB)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com [Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803 (Korea, Republic of)

2016-07-11

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan

2016-12-29

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a method includes preparing a pretreated target area on a CFRP composite surface using laser pulsed irradiation and bonding an electrode to exposed fibers in the pretreated target area. The surface preparation can allow the electrode to have a low contact resistance with the CFRP composite.

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

Science.gov (United States)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

Current voltage characteristics of composite superconductors with high contact resistance

International Nuclear Information System (INIS)

Akhmetov, A.A.; Baev, V.P.

1984-01-01

An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1993-01-01

process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

International Nuclear Information System (INIS)

Di Bartolomeo, A; Giubileo, F; Iemmo, L; Romeo, F; Santandrea, S; Gambardella, U

2013-01-01

We produced graphene-based field-effect transistors by contacting mono- and bi-layer graphene by sputtering Ni or Ti as metal electrodes. We performed electrical characterization of the devices by measuring their transfer and output characteristics. We clearly observed the presence of a double-dip feature in the conductance curve for Ni-contacted transistors, and we explain it in terms of charge transfer and graphene doping under the metal contacts. We also studied the contact resistance between the graphene and the metal electrodes with larger values of ∼30 kΩμm 2 recorded for Ti contacts. Importantly, we prove that the contact resistance is modulated by the back-gate voltage. (paper)

On the electrical contact and long-term behavior of compression-type connections with conventional and high-temperature conductor ropes with low sag

International Nuclear Information System (INIS)

Hildmann, Christian

2016-01-01

In Germany and in Europe it is due to the ''Energiewende'' necessary to transmit more electrical energy with existing overhead transmission lines. One possible technical solution to reach this aim is the use of high temperature low sag conductors (HTLS-conductors). Compared to the common Aluminium Conductor Steel Reinforced (ACSR), HTLS-conductors have higher rated currents and rated temperatures. Thus the electrical connections for HTLS-conductors are stressed to higher temperatures too. These components are most important for the safe and reliable operation of an overhead transmission line. Besides other connection technologies, hexagonal compression connections with ordinary transmission line conductors have proven themselves since decades. From the literature, mostly empirical studies with electrical tests for compression connections are known. The electrical contact behaviour, i.e. the quality of the electrical contact after assembly, of these connections has been investigated insufficiently. This work presents and enhances an electrical model of compression connections, so that the electrical contact behaviour can be determined more accurate. Based on this, principal considerations on the current distribution in the compression connection and its influence on the connection resistance are presented. As a result from the theoretical and the experimental work, recommendations for the design of hexagonal compression connections for transmission line conductors were developed. Furthermore it is known from the functional principle of compression type connections, that the electrical contact behaviour can be influenced from their form fit, force fit and cold welding. In particular the forces in compression connections have been calculated up to now by approximation. The known analytical calculations simplify the geometry and material behaviour and do not consider the correct mechanical load during assembly. For these reasons the joining process

Investigation of electrochemical intrusion of cations by the method of contact electric resistance

International Nuclear Information System (INIS)

Marichev, V.A.

1997-01-01

Paper shows the possibility and prospects of application of contact electric resistance technique (CER) to study in-situ the initial stages of electrochemical admission of cations (ECA). ECA is shown to increase CER of metals. It enables to determine ECA potential and to investigate kinetics of this process. Using ECA in copper, silver and zinc from alkali solutions as an example one has shown that CER technique enables to obtain results that do not contradict well-known published data. Potentials of ECA cations from acid and neutral solutions in copper, platinum, iron, titanium and tungsten are determined

The effect of electrode contact resistance and capacitive coupling on Complex Resistivity measurements

DEFF Research Database (Denmark)

Ingeman-Nielsen, Thomas

2006-01-01

The effect of electrode contact resistance and capacitive coupling on complex resistivity (CR) measurements is studied in this paper. An equivalent circuit model for the receiver is developed to describe the effects. The model shows that CR measurements are severely affected even at relatively lo...... with the contact resistance artificially increased by resistors. The results emphasize the importance of keeping contact resistance low in CR measurements....

Study of the Contact Resistance of Interlaced Stainless Steel Yarns Embedded in Hybrid Woven Fabrics

Directory of Open Access Journals (Sweden)

Vasile Simona

2017-06-01

Full Text Available The contact resistance of two interlacing electro-conductive yarns embedded in a hybrid woven fabric will constitute a problem for electro-conductive textiles under certain circumstances. A high contact resistance can induce hotspots, while a variable contact resistance may cause malfunctioning of the components that are interconnected by the electro-conductive yarns. Moreover, the contact robustness should be preserved over time and various treatments such as washing or abrading should not alter the functioning of the electro-conductive textiles. The electrical resistance developed in the contact point of two interlacing electro-conductive yarns is the result of various factors. The influence of diameter of the electro-conductive stainless steel yarns, the weave pattern, the weft density, and the abrasion on the contact resistance was investigated. Hybrid polyester fabrics were produced according to the design of experiments (DoE and statistical models were found that describe the variation of the contact resistance with the selected input parameters. It was concluded that the diameter of the stainless steel warp and weft yarns has a statistically significant influence on the contact resistance regardless of the weave. Weft density had a significant influence on the contact resistance but only in case of the twill fabrics. Abrasion led to an increase in contact resistance regardless of the weave pattern and the type of stainless steel yarn that was used. Finally, a combination of parameters that leads to plain and twill fabrics with low contact resistance and robust contacts is recommended.

Physical model of the contact resistivity of metal-graphene junctions

Energy Technology Data Exchange (ETDEWEB)

Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jiménez, David [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

2014-04-28

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

Physical model of the contact resistivity of metal-graphene junctions

International Nuclear Information System (INIS)

Chaves, Ferney A.; Jiménez, David; Cummings, Aron W.; Roche, Stephan

2014-01-01

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems

Electrical Resistivity Measurement of Petroleum Coke Powder by Means of Four-Probe Method

Science.gov (United States)

Rouget, G.; Majidi, B.; Picard, D.; Gauvin, G.; Ziegler, D.; Mashreghi, J.; Alamdari, H.

2017-10-01

Carbon anodes used in Hall-Héroult electrolysis cells are involved in both electrical and chemical processes of the cell. Electrical resistivity of anodes depends on electrical properties of its constituents, of which carbon coke aggregates are the most prevalent. Electrical resistivity of coke aggregates is usually characterized according to the ISO 10143 standardized test method, which consists of measuring the voltage drop in the bed of particles between two electrically conducing plungers through which the current is also applied. Estimation of the electrical resistivity of coke particles from the resistivity of particle bed is a challenging task and needs consideration of the contribution of the interparticle void fraction and the particle/particle contact resistances. In this work, the bed resistivity was normalized by subtracting the interparticle void fraction. Then, the contact size was obtained from discrete element method simulation and the contact resistance was calculated using Holm's theory. Finally, the resistivity of the coke particles was obtained from the bed resistivity.

Contact resistance at ceramic interfaces and its dependence on mechanical load

DEFF Research Database (Denmark)

Koch, Søren; Hendriksen, P.V.

2004-01-01

Low contact resistance between individual components is important for solid oxide fuel cell stacks if high performance is to be achieved. Several mechanisms may result in high contact resistance, e.g., current constriction due to low area of contact and formation of resistive phases between...... the components. In this study, the importance of current constriction due to limited area of contact at an interface is investigated by comparing the characteristics of contacts between LSM pellets with different surface finish. The load behaviour of the contact resistance has been investigated and a power law...... of the contact resistance was calculated using a simple model describing the variation of the contact area with load based on the measured surface roughness. Good agreement between the calculations and the experimentally observed resistances was found. (C) 2004 Elsevier B.V. All rights reserved....

Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

Science.gov (United States)

Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

1994-01-01

The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

Improvement and evaluation of thermal, electrical, sealing and mechanical contacts, and their interface materials

Science.gov (United States)

Luo, Xiangcheng

Material contacts, including thermal, electrical, seating (fluid sealing and electromagnetic sealing) and mechanical (pressure) contacts, together with their interface materials, were, evaluated, and in some cases, improved beyond the state of the art. The evaluation involved the use of thermal, electrical and mechanical methods. For thermal contacts, this work evaluated and improved the heat transfer efficiency between two contacting components by developing various thermal interface pastes. Sodium silicate based thermal pastes (with boron nitride particles as the thermally conductive filler) as well as polyethylene glycol (PEG) based thermal pastes were developed and evaluated. The optimum volume fractions of BN in sodium silicate based pastes and PEG based pastes were 16% and 18% respectively. The contribution of Li+ ions to the thermal contact conductance in the PEG-based paste was confirmed. For electrical contacts, the relationship between the mechanical reliability and electrical reliability of solder/copper and silver-epoxy/copper joints was addressed. Mechanical pull-out testing was conducted on solder/copper and silver-epoxy/copper joints, while the contact electrical resistivity was measured. Cleansing of the copper surface was more effective for the reliability of silver-epoxy/copper joint than that of solder/copper joint. For sealing contacts, this work evaluated flexible graphite as an electromagnetic shielding gasket material. Flexible graphite was found to be at least comparable to conductive filled silicone (the state of the art) in terms of the shielding effectiveness. The conformability of flexible graphite with its mating metal surface under repeated compression was characterized by monitoring the contact electrical resistance, as the conformability is important to both electromagnetic scaling and fluid waling using flexible graphite. For mechanical contacts, this work focused on the correlation of the interface structure (such as elastic

Effect of surfaces similarity on contact resistance of fractal rough surfaces under cyclic loading

Science.gov (United States)

Gao, Yuanwen; Liu, Limei; Ta, Wurui; Song, Jihua

2018-03-01

Although numerous studies have shown that contact resistance depends significantly on roughness and fractal dimension, it remains elusive how they affect contact resistance between rough surfaces. The interface similarity index is first proposed to describe the similarity of the contact surfaces, which gives a good indication of the actual contact area between surfaces. We reveal that the surfaces' similarity be an origin of contact resistance variation. The cyclic loading can increase the contact stiffness, and the contact stiffness increases with the increase of the interface similarity index. These findings explain the mechanism of surface roughness and fractal dimension on contact resistance, and also provide reference for the reliability design of the electrical connection.

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

Directory of Open Access Journals (Sweden)

Florent Ravaux

2017-06-01

Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

Science.gov (United States)

Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

2017-08-02

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Microstructure and wear behaviors of WC–12%Co coating deposited on ductile iron by electric contact surface strengthening

International Nuclear Information System (INIS)

Qi, Xiaoben; Zhu, Shigen; Ding, Hao; Zhu, Zhengkun; Han, Zhibing

2013-01-01

WC–12%Co powders deposited on ductile iron by electric contact strengthening were studied. This technology was based on the application of the contact resistance heating between the electrode and work piece to form a wear resistant layer on ductile iron. The microstructure, microhardness distribution, phase transformation and wear behaviors of the coating were investigated using optical microscope, scanning electron microscope, Vickers hardness (HV 0.5 ), X-ray diffraction, rolling contact wear tests. The results showed that the WC–12%Co coating by electric contact strengthening was metallurgically bonded to the ductile iron. Additionally, the effect of experimental parameters on microhardness and wear resistance of coatings were studied using orthogonal experiment. The results showed that compared with (A) electric current and (B) rotating speed, (C) contact force displays the most significant effect on microhardness and wear resistance of coatings. The coatings produced at A = 19 kA, B = 0.3 r/min and C = 700 N possessed highest microhardness of 1073 HV 0.5 and wear resistance.

Characterization of Deposited Platinum Contacts onto Discrete Graphene Flakes for Electrical Devices

KAUST Repository

Holguin Lerma, Jorge Alberto

2016-01-01

The electrical measurements confirm a 99.5% reduction in contact resistance after vacuum thermal annealing at 300 °C. Parallel to this, Raman characterization confirms the formation of a nanocrystalline carbon structure over the electrode. While this could suggest an enhancement of the electrical transport in the device, an additional thermal annealing step in air at 300 °C, promoted the oxidation and removal of the carbon shell and confirmed that the contact resistance remained the same. Overall this shows that the carbon shell along the electrode has no significant role in the contact resistance. Finally, the challenges based on topographical analysis of the deposited electrodes are discussed. Reduction of the electrode’s height down to one-third of the initial value, increased surface roughness, formation of voids along the electrodes and the onset of platinum nanoparticles near the area of deposition, represent a challenge for future work.

The role of contact resistance in graphene field-effect devices

Science.gov (United States)

Giubileo, Filippo; Di Bartolomeo, Antonio

2017-08-01

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

International Nuclear Information System (INIS)

Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

2011-01-01

We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

CERN Document Server

Kaltenbacher, T; Doser, M; Kellerbauer, A; Pribyl, W

2013-01-01

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2K and in a high magnetic field of at least 0.5T. This piezoelectric switch shows very low insertion loss of less than -0.1dB within a bandwidth of 100MHz when operated at 4.2K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Kaltenbacher, Thomas, E-mail: thomas.kaltenbacher@cern.ch [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria); Caspers, Fritz; Doser, Michael [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Kellerbauer, Alban [Max Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany); Pribyl, Wolfgang [Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria)

2013-11-21

A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than −0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2008-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

Low voltage initiation of damaging arcs between electrical contacts

International Nuclear Information System (INIS)

Cuthrell, R.E.

1975-07-01

Metallic arcs were found to precede the firm contacting of electrical contacts which were closed without bounce. When the open-circuit voltages were below the ionization potential, the initiation of these arcs was found to depend on the presence of asperities on the surfaces and on asperity contracting, melting, and pinching off by magnetic forces. The arc is thought to be initiated inductively when the molten metallic asperity contact is pinched off, and the electrode damage is similar to that produced by the arcing of opening contacts. Arcing could not be produced for exceptionally smooth surfaces, or, for rough surfaces when the open-circuit potential was below the melting voltages of the electrode metals. In order to prevent damage to contact surfaces by melting or arcing, it is suggested that test potentials be limited to below the melting voltages, that the current be limited, the test circuits be designed to prevent inductively generated high voltage transients, and the contact surfaces be very smooth. In order to facilitate arc initiation in arc welding applications, it is suggested that the surfaces of electrodes and work pieces be roughened. (U.S.)

Investigation into Contact Resistance And Damage of Metal Contacts Used in RF-MEMS Switches

Science.gov (United States)

2009-09-01

mechanically cycled by a piezo - electric transducer (PZT). The resistance through the simulated switch was measured using a four-wire measurement technique...determined that the microwave performance of a closed relay can be modeled as a simple resistor to a first order equivalent [106,108]. The relay resistance is...Therefore, a piezo device capable of precise higher frequency motion was chosen to provide cyclic contact motion. This device needed to be physically small

Electrical resistivity probes

Science.gov (United States)

Lee, Ki Ha; Becker, Alex; Faybishenko, Boris A.; Solbau, Ray D.

2003-10-21

A miniaturized electrical resistivity (ER) probe based on a known current-voltage (I-V) electrode structure, the Wenner array, is designed for local (point) measurement. A pair of voltage measuring electrodes are positioned between a pair of current carrying electrodes. The electrodes are typically about 1 cm long, separated by 1 cm, so the probe is only about 1 inch long. The electrodes are mounted to a rigid tube with electrical wires in the tube and a sand bag may be placed around the electrodes to protect the electrodes. The probes can be positioned in a borehole or on the surface. The electrodes make contact with the surrounding medium. In a dual mode system, individual probes of a plurality of spaced probes can be used to measure local resistance, i.e. point measurements, but the system can select different probes to make interval measurements between probes and between boreholes.

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan; Lubineau, Gilles; Alfano, Marco Francesco; Buttner, Ulrich

2016-01-01

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a

Corrosion behaviors and contact resistances of the low-carbon steel bipolar plate with a chromized coating containing carbides and nitrides

Energy Technology Data Exchange (ETDEWEB)

Bai, Ching-Yuan; Ger, Ming-Der [Department of Applied Chemistry and Materials Science, Chung Cheng Institute of Technology, National Defense University, Ta-His, Tao-Yuan, 335 (China); Wu, Min-Sheng [Department of Weapon System Engineering, Chung Cheng Institute of Technology, National Defense University, Ta-His, Tao-Yuan, 335 (China)

2009-08-15

This work improved the surface performance of low-carbon steel AISI 1020 by a reforming pack chromization process at low temperature (700 C) and investigated the possibility that the modified steels are used as metal bipolar plates (BPP) of PEMFCs. The steel surface was activated by electrical discharge machining (EDM) with different currents before the chromizing procedure. Experimental results indicate that a dense and homogenous Cr-rich layer is formed on the EDM carbon steels by pack chromization. The chromized coating pretreated with electrical discharge currents of 2 A has the lowest corrosion current density, 5.78 x 10{sup -8} Acm{sup -2}, evaluated by potentiodynamic polarization in a 0.5 M H{sub 2}SO{sub 4} solution and the smallest interfacial contact resistance (ICR), 11.8 m{omega}-cm{sup 2}, at 140 N/cm{sup 2}. The carbon steel with a coating containing carbides and nitrides is promising for application as metal BPPs, and this report presents the first research in producing BPPs with carbon steels. (author)

A micro-scale model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.; Lin, G.; Shih, A.J.; Hu, S.J. [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2007-01-01

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) in a proton exchange membrane (PEM) fuel cell constitutes a significant portion of the overall fuel cell electrical resistance under the normal operation conditions. Most current methods for contact resistance estimation are experimental and there is a lack of well developed theoretical methods. A micro-scale numerical model is developed to predict the electrical contact resistance between BPP and GDL by simulating the BPP surface topology and GDL structure and numerically determining the status for each contact spot. The total resistance and pressure are obtained by considering all contact spots as resistances in parallel and summing the results together. This model shows good agreements with experimental results. Influences of BPP surface roughness parameters on contact resistance are also studied. This model is beneficial in understanding the contact behavior between BPP and GDL and can be integrated with other fuel cell simulations to predict the overall performance of PEM fuel cells. (author)

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

International Nuclear Information System (INIS)

Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

2011-01-01

A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, -10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10 -6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V o 2+ .

A Feasibility Study on the Worn Area Estimation by Measuring a Contact Resistance (I)

International Nuclear Information System (INIS)

Lee, Young-Ho; Kim, Hyung-Kyu

2007-01-01

In order to improve the fretting wear resistance of the nuclear fuel rod with considering the effect of the contacting spring shape, it is necessary to examine the formation procedure of the worn area during the fretting wear experiments with including its shape, size and the debris removal path. This is because the wear volume and the maximum wear depth are dominantly affected by the worn area and the wear resistance of the nuclear fuel rod was dominantly affected by the spring shape rather than the test environment and the contact mode (i.e. impact, sliding, rubbing, etc.). Unfortunately, it is almost impossible to archive the size and shape of the worn area on real-time basis because the contact surfaces are always hidden. If we could measure the worn area properties during fretting wear tests, it enables us to promptly estimate the wear resistance or behavior with various contacting spring shapes. Generally, fretting wear degradation is generated by the localized plastic deformation, fracture and finally detachment of wear debris. Generally, wear debris easily oxidized by frictional heat, test environment, etc. From the previous studies, most of the wear debris was detached from the worn surface in the distilled water condition while the wear debris in the dry condition remained on or adhered to the worn surface. At this time, it is reasonable that the accumulated wear debris on the worn surface is existed in the form of oxide. If small amount of electric current was applied between the contacting surfaces, wear debris could be an obstacle to flow the electric current. This means that the variation of the contact resistance under constant electric current during the fretting wear tests has much information on the formation of the worn area even though the applying current could accelerate the oxidation of the generated wear debris. So, in this study, fretting wear tests have been performed with applying an electric current in room temperature air in order to

Measuring The Contact Resistances Of Photovoltaic Cells

Science.gov (United States)

Burger, D. R.

1985-01-01

Simple method devised to measure contact resistances of photovoltaic solar cells. Method uses readily available equipment and applicable at any time during life of cell. Enables evaluation of cell contact resistance, contact-end resistance, contact resistivity, sheet resistivity, and sheet resistivity under contact.

Experimental investigation on the electrical contact behavior of rolling contact connector

Energy Technology Data Exchange (ETDEWEB)

Chen, Junxing; Yang, Fei, E-mail: yfei2007@mail.xjtu.edu.cn; Luo, Kaiyu; Zhu, Mingliang; Wu, Yi; Rong, Mingzhe [State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049 (China)

2015-12-15

Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

Transition from steady to periodic liquid-metal magnetohydrodynamic flow in a sliding electrical contact

Science.gov (United States)

Talmage, Gita; Walker, John S.; Brown, Samuel H.; Sondergaard, Neal A.

1993-09-01

In homopolar motors and generators, large dc electric currents pass through the sliding electrical contacts between rotating copper disks (rotors) and static copper surfaces shrouding the rotor tips (stators). A liquid metal in the small radial gap between the rotor tip and concentric stator surface can provide a low-resistance, low-drag electrical contact. Since there is a strong magnetic field in the region of the electrical contacts, there are large electromagnetic body forces on the liquid metal. The primary, azimuthal motion consists of simple Couette flow, plus an electromagnetically driven flow with large extremes of the azimuthal velocity near the rotor corners. The secondary flow involves the radial and axial velocity components, is driven by the centrifugal force associated with the primary flow, and is opposed by the electromagnetic body force, so that the circulation varies inversely as the square of the magnetic-field strength. Three flow regimes are identified as the angular velocity Ω of the rotor is increased. For small Ω, the primary flow is decoupled from the secondary flow. As Ω increases, the secondary flow begins to convect the azimuthal-velocity peaks radially outward, which in turn changes the centrifugal force driving the secondary flow. At some critical value of Ω, the flow becomes periodic through the coupling of the primary and secondary flows. The azimuthal-velocity peaks begin to move radially in and out with an accompanying oscillation in the secondary-flow strength.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

2010-01-01

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.

2010-04-27

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Directory of Open Access Journals (Sweden)

Filippo Giannazzo

2017-01-01

Full Text Available Molybdenum disulphide (MoS2 is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ and the threshold voltage (Vth. This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (ID−VG in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel was also determined and it was found to increase with T as RC proportional to T3.1. The contribution of RC to the extraction of μ and Vth was evaluated, showing a more than 10% underestimation of μ when the effect of RC is neglected, whereas the effect on Vth is less significant. The temperature dependence of μ and Vth was also investigated. A decrease of μ proportional to 1/Tα with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of Vth showed a large negative shift (about 6 V increasing the temperature from 298 to 373 K, which was explained in terms of electron

Toughness degradation evaluation of low alloyed steels by electrical resistivity

Energy Technology Data Exchange (ETDEWEB)

Nahm, S H; Yu, K M; Kim, S C [Korea Research Inst. of Standards and Science, Taejon (Korea, Republic of); Kim, A [Department of Mechanical Engineering, Kongju Univ., Kongju, Chungnam (Korea, Republic of)

1997-09-01

Remaining life of turbine rotors with a crack can be assessed by the fracture toughness on the aged rotors at service temperature. DC potential drop measurement system was constructed in order to evaluate material toughness nondestructively. Test material was 1Cr-1Mo-0.25V steel used widely for turbine rotor material. Seven kinds of specimen with different degradation levels were prepared according to isothermal aging heat treatment at 630 deg. C. Electrical resistivity of test material was measured at room temperature. It was observed that material toughness and electrical resistivity decreased with the increase of degradation. The relationship between fracture toughness and electrical resistivity was investigated. Fracture toughness of a test material may be determined nondestructively by electrical resistivity. (author). 13 refs, 7 figs.

Modelling of a Double-Track Railway Contact System Electric Field Intensity

Science.gov (United States)

Belinsky, Stanislav; Khanzhina, Olga; Sidorov, Alexander

2017-12-01

Working conditions of personnel that serves contact system (CS) are affected by factors including health and safety, security and working hours (danger of rolling stock accidents, danger of electric shock strokes, work at height, severity and tension of work, increased noise level, etc.) Low frequency electromagnetic fields as part of both electric and magnetic fields are among of the most dangerous and harmful factors. These factors can affect not only the working personnel, but also a lot of people, who do not work with the contact system itself, but could be influenced by electromagnetic field as the result of their professional activity. People, who use public transport or live not far from the electrified lines, are endangered by these factors as well. There are results of the theoretical researches in which low frequency electric fields of railway contact system were designed with the use of mathematical and computer modelling. Significant features of electric field distribution near double-track railway in presence or absence of human body were established. The studies showed the dependence of low frequency electric field parameters on the distance to the track axis, height, and presence or absence of human body. The obtained data were compared with permissible standards established in the Russian Federation and other countries with advanced electrified railway system. Evaluation of low frequency electric fields harmful effect on personnel is the main result of this work. It is also established, that location of personnel, voltage and current level, amount of tracks and other factors influence electric fields of contact systems.

Comparison of mechanical properties for several electrical spring contact alloys

International Nuclear Information System (INIS)

Nordstrom, T.V.

1976-06-01

Work was conducted to determine whether beryllium-nickel alloy 440 had mechanical properties which made it suitable as a substitute for the presently used precious metal contact alloys Paliney 7 and Neyoro G, in certain electrical contact applications. Possible areas of applicability for the alloy were where extremely low contact resistance was not necessary or in components encountering elevated temperatures above those presently seen in weapons applications. Evaluation of the alloy involved three major experimental areas: 1) measurement of the room temperature microplastic (epsilon approximately 10 -6 ) and macroplastic (epsilon approximately 10 -3 ) behavior of alloy 440 in various age hardening conditions, 2) determination of applied stress effects on stress relaxation or contact force loss and 3) measurement of elevated temperature mechanical properties and stress relaxation behavior. Similar measurements were also made on Neyoro G and Paliney 7 for comparison. The primary results of the study show that beryllium-nickel alloy 440 is from a mechanical properties standpoint, equal or superior to the presently used Paliney 7 and Neyoro G for normal Sandia requirements. For elevated temperature applications, alloy 440 has clearly superior mechanical properties

Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope

Energy Technology Data Exchange (ETDEWEB)

Weber, Dirk Henning; Beyer, Andre; Voelkel, Berthold; Goelzhaeuser, Armin [Physik Supramolekularer Systeme, Universitaet Bielefeld (Germany); Schlenker, Eva; Bakin, Andrey; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig (Germany)

2008-07-01

A low energy electron point source (LEEPS) microscope is used to determine the electrical conductivity of individual freestanding ZnO nanowires in UHV. The nanowires were contacted with a manipulation tip and I-V curves were taken at different wire lengths. From those, the specific resistance was calculated and separated from the contact resistance. By comparing the specific resistances of ZnO nanowires with diameters between 1100 and 48 nm, a large surface contribution for the thin nanowires was found. A geometric model for separation between surface and bulk contributions is given. The results of electrical transport measurements on vapor phase grown ZnO nanowires are discussed, as well as the size dependence of the wire resistance.

Alternative current source based Schottky contact with additional electric field

Science.gov (United States)

Mamedov, R. K.; Aslanova, A. R.

2017-07-01

Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

Contact Resistance of Ceramic Interfaces Between Materials Used for Solid Oxide Fuel Cell Applications

DEFF Research Database (Denmark)

Koch, Søren

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may....... The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constric-tion at high temperatures. The measured contact resistance was comparable to the resis-tance calculated on basis of the contact...... areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential...

Utilizing 2D Electrical Resistivity Tomography and Very Low Frequency Electromagnetics to Investigate the Hydrogeology of Natural Cold Springs Near Virginia City, Southwest Montana

Science.gov (United States)

Khalil, Mohamed A.; Bobst, Andrew; Mosolf, Jesse

2018-04-01

Virginia City, Montana, is located in the northern Rocky Mountains of the United States. Two natural springs supply the city's water; however, the source of that water is poorly understood. The springs are located on the east side of the city, on the edge of an area affected by landslides. 2D electric resistivity tomography (ERT) and very low frequency electromagnetics (VLF-EM) were used to explore the springs and landslides. Two intersecting 2D resistivity profiles were measured at each spring, and two VLF profiles were measured in a landslide zone. The inverted 2D resistivity profiles at the springs reveal high resistivity basalt flows juxtaposed with low resistivity volcanic ash. The VLF profiles within the landslide show a series of fracture zones in the basalt, which are interpreted to be a series of landslide scarps. Results show a strong correlation between the inferred scarps and local topography. This study provides valuable geological information to help understand the source of water to the springs. The contact between the fractured basalt and the ash provides a sharp contrast in permeability, which causes water to flow along the contact and discharge at outcrop. The fracture zones along the scarps in the landslide deposits provide conduits of high secondary permeability to transmit water to the springs. The fracture zones near the scarps may also provide targets for municipal supply wells.

Modeling of electric and heat processes in spot resistance welding of cross-wire steel bars

Science.gov (United States)

Iatcheva, Ilona; Darzhanova, Denitsa; Manilova, Marina

2018-03-01

The aim of this work is the modeling of coupled electric and heat processes in a system for spot resistance welding of cross-wire reinforced steel bars. The real system geometry, dependences of material properties on the temperature, and changes of contact resistance and released power during the welding process have been taken into account in the study. The 3D analysis of the coupled AC electric and transient thermal field distributions is carried out using the finite element method. The novel feature is that the processes are modeled for several successive time stages, corresponding to the change of contact area, related contact resistance, and reduction of the released power, occurring simultaneously with the creation of contact between the workpieces. The values of contact resistance and power changes have been determined on the basis of preliminary experimental and theoretical investigations. The obtained results present the electric and temperature field distributions in the system. Special attention has been paid to the temperature evolution at specified observation points and lines in the contact area. The obtained information could be useful for clarification of the complicated nature of interrelated electric, thermal, mechanical, and physicochemical welding processes. Adequate modeling is also an opportunity for proper control and improvement of the system.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Science.gov (United States)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Determining the specific electric resistance of rock

Energy Technology Data Exchange (ETDEWEB)

Persad' ko, V.Ia.

1982-01-01

Data are presented on perfecting the method of laboratory determination of the specific electric resistance of a rock formation. The average error in determining the specific electric resistance of the core at various locations is no more than two percent with low resistance values (2-5 ohms).

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Contact Modelling in Resistance Welding, Part II: Experimental Validation

DEFF Research Database (Denmark)

Song, Quanfeng; Zhang, Wenqi; Bay, Niels

2006-01-01

Contact algorithms in resistance welding presented in the previous paper are experimentally validated in the present paper. In order to verify the mechanical contact algorithm, two types of experiments, i.e. sandwich upsetting of circular, cylindrical specimens and compression tests of discs...... with a solid ring projection towards a flat ring, are carried out at room temperature. The complete algorithm, involving not only the mechanical model but also the thermal and electrical models, is validated by projection welding experiments. The experimental results are in satisfactory agreement...

Determination of a Wear Initiation Cycle by using a Contact Resistance Measurement in Nuclear Fuel Fretting

International Nuclear Information System (INIS)

Lee, Young Ho; Kim, Hyung Kyu

2008-01-01

In nuclear fuel fretting, the improving of the contact condition with a modified spring shape is a useful method for increasing the wear resistance of the nuclear fuel rod. This is because the fretting wear resistance between the fuel rod and grid spring is mainly affected by the grid spring shape rather than the environment, the contact modes, etc. In addition, the wear resistance is affected by the wear debris behavior between contact surfaces. So, it is expected that the wear initiation of each spring shape should be determined in order to evaluate a wear resistance. However, it is almost impossible to measure the wear behavior in contact surfaces on a real time basis because the contact surfaces are always hidden. Besides, the results of the worn surface observation after the fretting wear tests are restricted to archive the information on the wear debris behavior and the formation mechanism of the wear scar. In order to evaluate the wear behavior during the fretting wear tests, it is proposed that the contact resistance measurement is a useful method for examining the wear initiation cycle and modes. Generally, fretting wear damages are rapidly progressed by a localized plastic deformation between the contact surfaces, crack initiation and fracture of the deformed surface with a strain hardening difference between a surface and a subsurface and finally a detachment of wear debris. After this, wear debris is easily oxidized by frictional heat, test environment, etc. At this time, a small amount of electric current applied between the contact surfaces will be influenced by the wear debris, which could be an obstacle to an electric current flow. So, it is possible to archive the information on the wear behavior by measuring the contact resistance. In order to determine the wear initiation cycle during the fretting wear tests, in this study, fretting wear tests have been performed by applying a constant electric current in room temperature air

Reducing contact resistance in graphene devices through contact area patterning.

Science.gov (United States)

Smith, Joshua T; Franklin, Aaron D; Farmer, Damon B; Dimitrakopoulos, Christos D

2013-04-23

Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the graphene cut edges, reproducibly maximizing "edge-contacted" injection. Despite the reduction in M-G contact area caused by these cuts, we find that a 32% reduction in contact resistance results in Cu-contacted, two-terminal devices, while a 22% reduction is achieved for top-gated graphene transistors with Pd contacts as compared to conventionally fabricated devices. The crucial role of contact annealing to facilitate this improvement is also elucidated. This simple approach provides a reliable and reproducible means of lowering contact resistance in graphene devices to bolster performance. Importantly, this enhancement requires no additional processing steps.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Energy Technology Data Exchange (ETDEWEB)

Li, Wei [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J., E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Liang, Yiran; Tian, Boyuan; Liang, Xuelei, E-mail: david.gundlach@nist.gov, E-mail: liangxl@pku.edu.cn; Peng, Lianmao [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

2014-03-21

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

International Nuclear Information System (INIS)

Li, Wei; Hacker, Christina A.; Cheng, Guangjun; Hight Walker, A. R.; Richter, Curt A.; Gundlach, David J.; Liang, Yiran; Tian, Boyuan; Liang, Xuelei; Peng, Lianmao

2014-01-01

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected

Electric contact arcing

International Nuclear Information System (INIS)

Cuthrell, R.E.

1976-01-01

Electrical contacts must function properly in many types of components used in nuclear weapon systems. Design, application, and testing of these components require detailed knowledge of chemical and physical phenomena associated with stockpile storage, stockpile testing, and operation. In the past, investigation of these phenomena has led to significant discoveries on the effects of surface contaminants, friction and wear, and the mechanics of closure on contact performance. A recent investigation of contact arcing phenomena which revealed that, preceding contact closure, arcs may occur at voltages lower than had been previously known is described. This discovery is important, since arcing may damage contacts, and repetitive testing of contacts performed as part of a quality assurance program might produce cumulative damage that would yield misleading life-test data and could prevent proper operation of the contacts at some time in the future. This damage can be avoided by determining the conditions under which arcing occurs, and ensuring that these conditions are avoided in contact testing

Low resistance, low-inductance power connectors

Science.gov (United States)

Coteus, Paul W.; Ferencz, Andrew; Hall, Shawn Anthony; Takken, Todd Edward

2018-01-16

An electrical connector includes an anode assembly for conducting an electrical supply current from a source to a destination, the anode assembly includes an anode formed into a first shape from sheet metal or other sheet-like conducting material. A cathode assembly conducts an electrical return current from the destination to the source, the cathode assembly includes a cathode formed into a second shape from sheet metal or other sheet-like conducting material. An insulator prevents electrical conduction between the anode and the cathode. The first and second shapes are such as to provide a conformity of one to the other, with the insulator therebetween having a predetermined relatively thin thickness. A predetermined low-resistance path for the supply current is provided by the anode, a predetermined low-resistance path for the return current is provided by the cathode, and the proximity of the anode to the cathode along these paths provides a predetermined low self-inductance of the connector, where the proximity is afforded by the conformity of the first and second shapes.

An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2013-01-01

Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

International Nuclear Information System (INIS)

He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

2015-01-01

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

Contact resistance of ceramic interfaces between materials used for solid oxide fuel cell applications

Energy Technology Data Exchange (ETDEWEB)

Koch, S.

2002-01-01

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may be smaller or larger than the constriction resistance. The contact resistance between pairs of three different materials were analysed (strontium doped lanthanum manganite, yttria stabilised zirconia and strontium and nickel doped lanthanum cobaltite), and the effects of temperature, atmosphere, polarisation and mechanical load on the contact resistance were investigated. The investigations revealed that the mechanical load of a ceramic contact has a high influence on the contact resistance, and generally power law dependence between the contact resistance and the mechanical load was found. The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constriction at high temperatures. The measured contact resistance was comparable to the resistance calculated on basis of the contact areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential barriers to model the observed behaviour. The current-voltage behaviour of the YSZ contact interfaces was only weakly non-linear, and could be described by 22{+-}1 barriers in series. Contact interfaces with sinterable contact layers were also investigated, and the measured contact resistance for these interfaces were more than 10 times less than for the other interfaces. (au)

Low-Thermal-Resistance Baseplate Mounting

Science.gov (United States)

Perreault, W. T.

1984-01-01

Low-thermal-resistance mounting achieved by preloading baseplate to slight convexity with screws threaded through beam. As mounting bolts around edge of base-place tightened, baseplate and cold plate contact first in center, with region of intimate contact spreading outward as bolts tightened.

Review of prediction for thermal contact resistance

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

Theoretical prediction research on thermal contact resistance is reviewed in this paper. In general, modeling or simulating the thermal contact resistance involves several aspects, including the descriptions of surface topography, the analysis of micro mechanical deformation, and the thermal models. Some key problems are proposed for accurately predicting the thermal resistance of two solid contact surfaces. We provide a perspective on further promising research, which would be beneficial to understanding mechanisms and engineering applications of the thermal contact resistance in heat transport phenomena.

Low resistance and transparent Ag/AZO ohmic contact to p-GaN

International Nuclear Information System (INIS)

Han, T.; Wang, T.; Gan, X. W.; Wu, H.; Shi, Y.; Liu, C.

2014-01-01

Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electron beam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 .deg. C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 x 10 -4 Ωcm 2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.

Influence of interfacial layer on contact resistance

NARCIS (Netherlands)

Roy, D.; In 't Zand, M.A.A.; Delhounge, R.; Klootwijk, J.H.; Wolters, Robertus A.M.

2008-01-01

The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process

Effect of implanted doses of N+-ions on the contact resistance of copper contacts

International Nuclear Information System (INIS)

Dubravec, B.; Kovac, P.; Lipka, F.; Padysak, M.

1997-01-01

The paper deals with the effect of implanted doses of N + ions on the contact resistance. Dependencies of the contact resistance versus contact force R c =f(F c ) and microhardness of implanted surfaces were measured for three implanted profiles. The influence of the aggressive environs on the contact resistance of implanted contact is given too

Nanolithography based contacting method for electrical measurements on single template synthesized nanowires

DEFF Research Database (Denmark)

Fusil, S.; Piraux, L.; Mátéfi-Tempfli, Stefan

2005-01-01

A reliable method enabling electrical measurements on single nanowires prepared by electrodeposition in an alumina template is described. This technique is based on electrically controlled nanoindentation of a thin insulating resist deposited on the top face of the template filled by the nanowires....... We show that this method is very flexible, allowing us to electrically address single nanowires of controlled length down to 100 nm and of desired composition. Using this approach, current densities as large as 10 A cm were successfully injected through a point contact on a single magnetic...

Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University

2013-12-02

Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

Characterization of Contact and Bulk Thermal Resistance of Laminations for Electric Machines

Energy Technology Data Exchange (ETDEWEB)

Cousineau, J. Emily [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin [National Renewable Energy Laboratory (NREL), Golden, CO (United States); DeVoto, Doug [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mihalic, Mark [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Narumanchi, Sreekant [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2015-06-30

The ability to remove heat from an electric machine depends on the passive stack thermal resistances within the machine and the convective cooling performance of the selected cooling technology. This report focuses on the passive thermal design, specifically properties of the stator and rotor lamination stacks. Orthotropic thermal conductivity, specific heat, and density are reported. Four materials commonly used in electric machines were tested, including M19 (29 and 26 gauge), HF10, and Arnon 7 materials.

NRC Information No. 88-98: Electrical relay degradation caused by oxidation of contact surfaces

International Nuclear Information System (INIS)

Rossi, C.E.

1992-01-01

The NRC staff was recently informed by Clinton Power Station that a reactor scram on June 24, 1988, was caused by an electrical relay failure from oxide buildup on relay contact surfaces. Other information on relay failure from contact oxidation indicates that this problem may be more prevalent than previously thought. For example, a July 17, 1988, 10 CFR Part 21 report from Palo Verde, Unit 2, reported relay failures from contact oxidation that were due to the low current application of the relays. The relay contact surfaces in both of these examples are silver-nickel alloys, and both applications were for low current (i.e., milli-ampere current). Electrical relay contacts made of silver-nickel or silver-cadmium alloys will oxidize (tarnish) when used in low current applications because of the absence of contact surface sparking from the typical relay contact ''making and breaking'' functions. The sparking in the contact surfaces promotes a self-cleaning mechanism that reduces the tarnish buildup on the silver-nickel or silver-cadmium contacts. Discussions with one relay manufacturer revealed that the normal industry practice for low current circuit applications is either to use a contact surface material that will not oxidize or to compensate for the oxidation by increased maintenance activities to ensure reliability. The applied voltage may also influence contact oxidation

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

OpenAIRE

Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

2008-01-01

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

Estimation of contact resistance in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lianhong; Liu, Ying; Song, Haimin; Wang, Shuxin [School of Mechanical Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072 (China); Zhou, Yuanyuan; Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2006-11-22

The contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) is an important factor contributing to the power loss in proton exchange membrane (PEM) fuel cells. At present there is still not a well-developed method to estimate such contact resistance. This paper proposes two effective methods for estimating the contact resistance between the BPP and the GDL based on an experimental contact resistance-pressure constitutive relation. The constitutive relation was obtained by experimentally measuring the contact resistance between the GDL and a flat plate of the same material and processing conditions as the BPP under stated contact pressure. In the first method, which was a simplified prediction, the contact area and contact pressure between the BPP and the GDL were analyzed with a simple geometrical relation and the contact resistance was obtained by the contact resistance-pressure constitutive relation. In the second method, the contact area and contact pressure between the BPP and GDL were analyzed using FEM and the contact resistance was computed for each contact element according to the constitutive relation. The total contact resistance was then calculated by considering all contact elements in parallel. The influence of load distribution on contact resistance was also investigated. Good agreement was demonstrated between experimental results and predictions by both methods. The simplified prediction method provides an efficient approach to estimating the contact resistance in PEM fuel cells. The proposed methods for estimating the contact resistance can be useful in modeling and optimizing the assembly process to improve the performance of PEM fuel cells. (author)

Measurement of metal/carbon nanotube contact resistance by adjusting contact length using laser ablation

Energy Technology Data Exchange (ETDEWEB)

Lan Chun; Srisungsitthisunti, Pornsak; Amama, Placidus B; Fisher, Timothy S; Xu Xianfan; Reifenberger, Ronald G [Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States)], E-mail: lan0@physics.purdue.edu

2008-03-26

A technique of measuring contact resistance between an individual nanotube and a deposited metallic film is described. Using laser ablation to sequentially shorten the contact length between a nanotube and the evaporated metallic film, the linear resistivity of the nanotube as well as the specific contact resistivity between the nanotube and metallic film can be determined. This technique can be generally used to measure the specific contact resistance that develops between a metallic film and a variety of different nanowires and nanotubes.

Iron aluminide useful as electrical resistance heating elements

Science.gov (United States)

Sikka, V.K.; Deevi, S.C.; Fleischhauer, G.S.; Hajaligol, M.R.; Lilly, A.C. Jr.

1997-04-15

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, {=}0.05% Zr or ZrO{sub 2} stringers extending perpendicular to an exposed surface of the heating element or {>=}0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, {<=}2% Ti, {<=}2% Mo, {<=}1% Zr, {<=}1% C, {<=}0.1% B, {<=}30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, {<=}1% rare earth metal, {<=}1% oxygen, {<=}3% Cu, balance Fe. 64 figs.

Electrical resistance determination of actual contact area of cold welded metal joints

Science.gov (United States)

Hordon, M. J.

1970-01-01

Method measures the area of the bonded zone of a compression weld by observing the electrical resistance of the weld zone while the load changes from full compression until the joint ruptures under tension. The ratio of bonding force to maximum tensile load varies considerably.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Directory of Open Access Journals (Sweden)

Krawczak Ewelina

2017-01-01

Full Text Available The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

Science.gov (United States)

Krawczak, Ewelina; Gułkowski, Sławomir

2017-10-01

The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

Development of Low Surge Vacuum Contact with Te

Energy Technology Data Exchange (ETDEWEB)

Kim, B. S.; Lee, H. W.; Woo, B. C.; Kim, B. G. [Korea Electrotechnology Research Institute, Changwon (Korea, Republic of)

1996-12-01

The purpose of this study is to develop of low surge Te contact for vacuum circuit breaker. The vacuum circuit breaker have various advantages such that it is free from maintenance, does not bring about public pollution, is excellent in its current breaking property, and so forth, on account of which the extent of its application has become broadened rapidly. For the characteristics of the contact material for the vacuum circuit breaker to satisfy, there may be enumerated: (1)large current breaking capacity; (2)high voltage withstand; (3)small contact resistance; (4)small melt-adhesive force; (5)low chopping current value; (6)good workability; (7)sufficient mechanical strength; and so forth. In this study we used cobalt for based refractory material having high melting temperature and intermetallic material between tellurium and silver to reduce chopping current. The contact materials were produced in accordance with the powder metallurgy using the method of infiltration. Production of the contact material was carried out in such a method that cobalt powder having average particle size of 50{mu}m, pre sintered in H{sub 2} atmosphere, 900 degree C , 2 hour. Ag ingot and Te(Se) were alloyed using high frequency furnaced in vacuum. And then Ag-Te(Se) alloy was infiltrated to Co skeleton in H{sub 2} atmosphere, 1000 degree C , 1 hour. The melting of the alloy to be infiltrated was carried out in a vacuum sealed quartz tube and be analysed by X-ray diffraction, scanning electron microscope, optical microscope and energy dispersive energy spectrometer. In the alloying of silver and tellurium, tellurium does not exist in single element but Ag{sub 2}Te intermetallic compound. And In Ag and Se, Se does not exist in single element but Ag{sub 2}Se intermetallic compound. We also produced the test vacuum interruptor to evaluate the electrode properties in vacuum atmosphere. The electrical properties of Co-(Ag-Se) electrode have better value than that of Co-(Ag-Te) electrode

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

Science.gov (United States)

Basiricò, L.; Lanzara, G.

2012-08-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease).

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

International Nuclear Information System (INIS)

Basiricò, L; Lanzara, G

2012-01-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease). (paper)

Reduction of Ag–Si electrical contact resistance by selective RF heating

International Nuclear Information System (INIS)

De Wijs, W-J A; Ljevar, S; Van de Sande, M J; De With, G

2016-01-01

Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s −1 . Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates. (paper)

Effect of Contact Pressure on the Resistance Contact Value and Temperature Changes in Copper Busbar Connection

Directory of Open Access Journals (Sweden)

Agus Risdiyanto

2012-12-01

Full Text Available This paper discussed the influence of tightness or contacts pressure on copper busbar joints to determine changes in the value of the initial contact resistance and the maximum temperature at the joint due to high current load. The test sample was copper busbar 3 x 30 mm with configuration of bolted overlapping joint. Increasing contact pressure at the joint was measured to find out its effect on the value of contact resistance. The applied pressure was 6 to 36 MPa. Procedure of contact resistance measurement refer to the ASTM B539 standard using four-wire method. The sample subsequently loaded with the current of 350 A for 60 minutes and the maximum temperature at the joint was measured. The result showed that increasing contact pressure at the busbar joint will reduce the contact resistance and maximum temperature. The increase of contact pressure from 6 to 30 MPa causes decreasing contact resistance from 16 μΩ to 11 μΩ. Further increasing of contact pressure more than 30 MPa did not affect the contact resistance significantly. The lowest temperatur of busbar joint of 54°C was reached at a contact pressure of 36 Mpa.

Method of separate determination of high-ohmic sample resistance and contact resistance

Directory of Open Access Journals (Sweden)

Vadim A. Golubiatnikov

2015-09-01

Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Boksteen, B.K.; Boksteen, B.K.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2007-01-01

A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Two-point concrete resistivity measurements: interfacial phenomena at the electrode–concrete contact zone

International Nuclear Information System (INIS)

McCarter, W J; Taha, H M; Suryanto, B; Starrs, G

2015-01-01

Ac impedance spectroscopy measurements are used to critically examine the end-to-end (two-point) testing technique employed in evaluating the bulk electrical resistivity of concrete. In particular, this paper focusses on the interfacial contact region between the electrode and specimen and the influence of contacting medium and measurement frequency on the impedance response. Two-point and four-point electrode configurations were compared and modelling of the impedance response was undertaken to identify and quantify the contribution of the electrode–specimen contact region on the measured impedance. Measurements are presented in both Bode and Nyquist formats to aid interpretation. Concretes mixes conforming to BSEN206-1 and BS8500-1 were investigated which included concretes containing the supplementary cementitious materials fly ash and ground granulated blast-furnace slag. A measurement protocol is presented for the end-to-end technique in terms of test frequency and electrode–specimen contacting medium in order to minimize electrode–specimen interfacial effect and ensure correct measurement of bulk resistivity. (paper)

Bias dependent specic contact resistance of phase change material to metal contacts

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha; Wolters, Robertus A.M.

2010-01-01

Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with

Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

International Nuclear Information System (INIS)

Dias, R J; Romano-Rodriguez, A; O'Regan, C; Holmes, J D; Petkov, N; Thrompenaars, P; Mulder, J J L

2012-01-01

Electron beam-induced deposition (EBID) is a direct write process where an electron beam locally decomposes a precursor gas leaving behind non-volatile deposits. It is a fast and relatively in-expensive method designed to develop conductive (metal) or isolating (oxide) nanostructures. Unfortunately the EBID process results in deposition of metal nanostructures with relatively high resistivity because the gas precursors employed are hydrocarbon based. We have developed deposition protocols using novel gas-injector system (GIS) with a carbon free Pt precursor. Interconnect type structures were deposited on preformed metal architectures. The obtained structures were analysed by cross-sectional TEM and their electrical properties were analysed ex-situ using four point probe electrical tests. The results suggest that both the structural and electrical characteristics differ significantly from those of Pt interconnects deposited by conventional hydrocarbon based precursors, and show great promise for the development of low resistivity electrical contacts.

Iron aluminide useful as electrical resistance heating elements

Science.gov (United States)

Sikka, Vinod K.; Deevi, Seetharama C.; Fleischhauer, Grier S.; Hajaligol, Mohammad R.; Lilly, Jr., A. Clifton

1997-01-01

The invention relates generally to aluminum containing iron-base alloys useful as electrical resistance heating elements. The aluminum containing iron-base alloys have improved room temperature ductility, electrical resistivity, cyclic fatigue resistance, high temperature oxidation resistance, low and high temperature strength, and/or resistance to high temperature sagging. The alloy has an entirely ferritic microstructure which is free of austenite and includes, in weight %, over 4% Al, .ltoreq.1% Cr and either .gtoreq.0.05% Zr or ZrO.sub.2 stringers extending perpendicular to an exposed surface of the heating element or .gtoreq.0.1% oxide dispersoid particles. The alloy can contain 14-32% Al, .ltoreq.2% Ti, .ltoreq.2% Mo, .ltoreq.1% Zr, .ltoreq.1% C, .ltoreq.0.1% B, .ltoreq.30% oxide dispersoid and/or electrically insulating or electrically conductive covalent ceramic particles, .ltoreq.1% rare earth metal, .ltoreq.1% oxygen, .ltoreq.3% Cu, balance Fe.

Design and fabrication stable LNF contact for future IC application

International Nuclear Information System (INIS)

Bhuiyan, M M I; Bhuiyan, M; Rashid, M M; Ahmed, Sayem; Kajihara, M

2013-01-01

Enable the design of a small contact spring for applications requiring high density, high speed and high durability. A low normal force (LNF) contact spring with high performance is fabricated using a unique combined MEMS photo resist lithography and electro fine forming (EFF) technology. Reducing a total contact material cost of a connector, a high-Hertz stress with LNF contact will be a key technology in the future. Only radius R 5μm tip with 0.1N force contact provides an excellent electrical performance which is much sharper than conventional contact. 0.30million cycle's durability test was passed at 300μm displacement and the contact resistance was ≤50mΩ

2D and 3D Subsurface Geo-electrical Resistivity Imaging of ...

African Journals Online (AJOL)

PROF HORSFALL

2018-04-12

Apr 12, 2018 ... heavy metals is rare through ingestion or dermal contact, but it is possible. ... Earth). Experimental: Electrical Resistivity Tomography. (ERT) survey was ... hence the area is prone to a good age of leach material that has been ...

On the electrical contact and long-term behavior of compression-type connections with conventional and high-temperature conductor ropes with low sag; Zum elektrischen Kontakt- und Langzeitverhalten von Pressverbindungen mit konventionellen und Hochtemperatur-Leiterseilen mit geringem Durchhang

Energy Technology Data Exchange (ETDEWEB)

Hildmann, Christian

2016-12-09

In Germany and in Europe it is due to the ''Energiewende'' necessary to transmit more electrical energy with existing overhead transmission lines. One possible technical solution to reach this aim is the use of high temperature low sag conductors (HTLS-conductors). Compared to the common Aluminium Conductor Steel Reinforced (ACSR), HTLS-conductors have higher rated currents and rated temperatures. Thus the electrical connections for HTLS-conductors are stressed to higher temperatures too. These components are most important for the safe and reliable operation of an overhead transmission line. Besides other connection technologies, hexagonal compression connections with ordinary transmission line conductors have proven themselves since decades. From the literature, mostly empirical studies with electrical tests for compression connections are known. The electrical contact behaviour, i.e. the quality of the electrical contact after assembly, of these connections has been investigated insufficiently. This work presents and enhances an electrical model of compression connections, so that the electrical contact behaviour can be determined more accurate. Based on this, principal considerations on the current distribution in the compression connection and its influence on the connection resistance are presented. As a result from the theoretical and the experimental work, recommendations for the design of hexagonal compression connections for transmission line conductors were developed. Furthermore it is known from the functional principle of compression type connections, that the electrical contact behaviour can be influenced from their form fit, force fit and cold welding. In particular the forces in compression connections have been calculated up to now by approximation. The known analytical calculations simplify the geometry and material behaviour and do not consider the correct mechanical load during assembly. For these reasons the joining process

NMOS contact resistance reduction with selenium implant into NiPt silicide

Science.gov (United States)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Electrical Methods: Resistivity Methods

Science.gov (United States)

Surface electrical resistivity surveying is based on the principle that the distribution of electrical potential in the ground around a current-carrying electrode depends on the electrical resistivities and distribution of the surrounding soils and rocks.

Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

Energy Technology Data Exchange (ETDEWEB)

Vecchiola, Aymeric [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Concept Scientific Instruments, ZA de Courtaboeuf, 2 rue de la Terre de Feu, 91940 Les Ulis (France); Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Chrétien, Pascal; Schneegans, Olivier; Mencaraglia, Denis; Houzé, Frédéric, E-mail: frederic.houze@geeps.centralesupelec.fr [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Delprat, Sophie [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); UPMC, Université Paris 06, 4 place Jussieu, 75005 Paris (France); Bouzehouane, Karim; Seneor, Pierre; Mattana, Richard [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Tatay, Sergio [Molecular Science Institute, University of Valencia, 46980 Paterna (Spain); Geffroy, Bernard [Lab. Physique des Interfaces et Couches minces (PICM), UMR 7647 CNRS-École polytechnique, 91128 Palaiseau (France); Lab. d' Innovation en Chimie des Surfaces et Nanosciences (LICSEN), NIMBE UMR 3685 CNRS-CEA Saclay, 91191 Gif-sur-Yvette (France); and others

2016-06-13

An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider range of resistance measurement (over 10 decades) without any manual switching, which is a major advantage for the characterization of materials with large on-sample resistance variations. After describing the basics of the set-up, we report on preliminary investigations focused on academic samples of self-assembled monolayers with various thicknesses as a demonstrator of the imaging capabilities of our instrument, from qualitative and semi-quantitative viewpoints. Then two application examples are presented, regarding an organic photovoltaic thin film and an array of individual vertical carbon nanotubes. Both attest the relevance of the technique for the control and optimization of technological processes.

The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2015-01-01

Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

Thickness effect on electric resistivity on polystyrene and carbon black- based composites

Energy Technology Data Exchange (ETDEWEB)

Hernandez-Lopez, S; Vigueras-Santiago, E [Laboratorio de Investigacion y Desarrollo de Materiales Avanzados (LIDMA) Facultad de Quimica, Paseo Colon Esquina con Paseo Tollocan, s/n, CP 50000, Toluca (Mexico); Mayorga-Rojas, M; Reyes-Contreras, D, E-mail: eviguerass@uaemex.m [Facultad de Ciencias, Universidad Autonoma del Estado de Mexico. Av. Instituto Literario 100 Ote. C. P. 50000, Toluca (Mexico)

2009-05-01

Changes on electrical resistivity were experimentally studied for polystyrene and carbon black-based composites respect to the temperature. 22% w/w carbon black composite films at 30{mu}m, 2mm y 1cm thick were submitted to thermal heating-cooling cycles from room temperature to 100 deg. C, slightly up to T{sub g} of the composite. For each cycle changes on electrical resistivity constituent a hysteresis loop that depends on the sample thickness. The changes during the heating stage could be explained as a consequence of the thermal expansion and mobility of the polymer chains at T{sub g}, producing a disconnecting of the electrical contacts among carbon black particles and an important increasing (200%) of the electrical resistivity. For each cycle, the hysteresis loop was observed in thicker samples, whereas for 30 mu m thickness sample the hysteresis loop was lost after four cycles.

Synthesis and Electrical Resistivity of Nickel Polymethacrylate

Science.gov (United States)

Chohan, M. H.; Khalid, A. H.; Zulfiqar, M.; Butt, P. K.; Khan, Farah; Hussain, Rizwan

Synthesis of nickel polymethacrylate was carried out using methanolic solutions of sodium hydroxide and polymethacrylic acid. The electrical resistivity of the pellets made from Ni-polymethacrylate was measured at different voltages and temperatures. Results showed that the electrical resistivity of Ni-polymethacrylate decreases significantly with voltage in high temperature regions but the decrease is insignificant at temperatures nearing room temperature. The activation energy at low temperatures is approximately 0.8 eV whereas at high temperature it is in the range 0.21-0.27 eV.

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

International Nuclear Information System (INIS)

Gu, Wen; Wu, Xingyang; Song, Peng; Zhang, Jianhua

2015-01-01

Highlights: • The electrical properties of GZO/CuS x contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu x S interlayers under different annealing temperatures. It is shown that the GZO/Cu x S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10 −2 Ω cm 2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu x S/p-GaN and Cu x S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

Degradation pattern of black phosphorus multilayer field-effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

Science.gov (United States)

Lee, Byung Chul; Kim, Chul Min; Jang, Ho-Kyun; Lee, Jae Woo; Joo, Min-Kyu; Kim, Gyu-Tae

2017-10-01

Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field-effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively.

Using electrical resistance tomography to map subsurface temperatures

Science.gov (United States)

Ramirez, Abelardo L.; Chesnut, Dwayne A.; Daily, William D.

1994-01-01

A method is provided for measuring subsurface soil or rock temperatures remotely using electrical resistivity tomography (ERT). Electrical resistivity measurements are made using electrodes implanted in boreholes driven into the soil and/or at the ground surface. The measurements are repeated as some process changes the temperatures of the soil mass/rock mass. Tomographs of electrical resistivity are calculated based on the measurements using Poisson's equation. Changes in the soil/rock resistivity can be related to changes in soil/rock temperatures when: (1) the electrical conductivity of the fluid trapped in the soil's pore space is low, (2) the soil/rock has a high cation exchange capacity and (3) the temperature changes are sufficiently high. When these three conditions exist the resistivity changes observed in the ERT tomographs can be directly attributed to changes in soil/rock temperatures. This method provides a way of mapping temperature changes in subsurface soils remotely. Distances over which the ERT method can be used to monitor changes in soil temperature range from tens to hundreds of meters from the electrode locations.

Using electrical resistance tomography to map subsurface temperatures

Science.gov (United States)

Ramirez, A.L.; Chesnut, D.A.; Daily, W.D.

1994-09-13

A method is provided for measuring subsurface soil or rock temperatures remotely using electrical resistivity tomography (ERT). Electrical resistivity measurements are made using electrodes implanted in boreholes driven into the soil and/or at the ground surface. The measurements are repeated as some process changes the temperatures of the soil mass/rock mass. Tomographs of electrical resistivity are calculated based on the measurements using Poisson's equation. Changes in the soil/rock resistivity can be related to changes in soil/rock temperatures when: (1) the electrical conductivity of the fluid trapped in the soil's pore space is low, (2) the soil/rock has a high cation exchange capacity and (3) the temperature changes are sufficiently high. When these three conditions exist the resistivity changes observed in the ERT tomographs can be directly attributed to changes in soil/rock temperatures. This method provides a way of mapping temperature changes in subsurface soils remotely. Distances over which the ERT method can be used to monitor changes in soil temperature range from tens to hundreds of meters from the electrode locations. 1 fig.

Evaluation of surface characteristics under fretting of electrical contacts: Removal behaviour of hot dipped tin coating

International Nuclear Information System (INIS)

Park, Young Woo; Ramesh Bapu, G.N.K.; Lee, Kang Yong

2009-01-01

The fretting corrosion behaviour of hot dipped tin coating is investigated at low fretting cycles at ±25 μm displacement amplitude, 0.5N normal load, 3 Hz frequency, 45-50% relative humidity, and 25 ± 1 deg. C temperature. The typical characteristics of the change in contact resistance with fretting cycles are explained. The fretted surface is examined using laser scanning microscope, scanning electron microscope and energy dispersive X-ray analysis to assess the surface profile, extent of fretting damage, extent of oxidation and elemental distribution across the contact zone. The interdependence of extent of wear and oxidation increases the complexity of the fretting corrosion behaviour of tin coating. The variation of contact resistance clearly revealed the fretting of tin coating from 50 to 1200 cycles and the fretting of the substrate above 1200 cycles. The observed low and stable contact resistance region and the fluctuating resistance region at various fretting cycles are explained and substantiated with Scanning electron microscopy (SEM), laser scanning microscope (LSM) and energy dispersive analysis of X-rays (EDAX) analysis results of the fretted surface.

Determination of the electrical resistivity of vertically aligned carbon nanotubes by scanning probe microscopy

Science.gov (United States)

Ageev, O. A.; Il'in, O. I.; Rubashkina, M. V.; Smirnov, V. A.; Fedotov, A. A.; Tsukanova, O. G.

2015-07-01

Techniques are developed to determine the resistance per unit length and the electrical resistivity of vertically aligned carbon nanotubes (VA CNTs) using atomic force microscopy (AFM) and scanning tunneling microscopy (STM). These techniques are used to study the resistance of VA CNTs. The resistance of an individual VA CNT calculated with the AFM-based technique is shown to be higher than the resistance of VA CNTs determined by the STM-based technique by a factor of 200, which is related to the influence of the resistance of the contact of an AFM probe to VA CNTs. The resistance per unit length and the electrical resistivity of an individual VA CNT 118 ± 39 nm in diameter and 2.23 ± 0.37 μm in height that are determined by the STM-based technique are 19.28 ± 3.08 kΩ/μm and 8.32 ± 3.18 × 10-4 Ω m, respectively. The STM-based technique developed to determine the resistance per unit length and the electrical resistivity of VA CNTs can be used to diagnose the electrical parameters of VA CNTs and to create VA CNT-based nanoelectronic elements.

Kinetics of chloride ion adsorption on stainless alloys by in situ contact electric resistance technique

International Nuclear Information System (INIS)

Marichev, V.A.

2008-01-01

As the primary reason for pitting of stainless alloys, chloride adsorption is not adequately studied, e.g. kinetic investigations of chloride adsorption are actually absent. We discuss and partly reconsider some well-known facts (e.g. halides order: Cl - > Br - > I - ), disputed points (chloride penetration in passive film), and still unknown aspects of chloride adsorption. For the first time, we report kinetic studies of chloride adsorption on stainless alloys by in situ contact electric resistance technique. The peak-like character of kinetic curves has been found for all studied stainless alloys, but not for pure iron and nickel. This has been considered as a sequence of the substantial charge transfer during chloride adsorption. Opposite to typical d metals, stainless materials are alloys of early and late transition metals having unfilled d-bands with increased number of d-electron vacancies. Such electronic structure is favorable for adsorption of electron donating adsorbates like halide ions. Experimental data of this work are more compatible with possibility of chloride penetration into the passive films on stainless alloys that also might involve a transformation of primary oxy-hydroxide films into oxy-chloride films

Analysis of the material's expenditure of electric contacts by means of the isotopic method

International Nuclear Information System (INIS)

Farkash, K.

1979-01-01

To investigate lifetime of the weak-current and heavy-current contacts different radioisotopic methods have been developed. Advantages of the radioisotopic methods as compared with other methods of testing consists of the fact that due to their sensitivity they permit to determine low expense of material; permit to determine quantitatively expense of each element separately from the elements, composing the contacts alloy; by means of these methods it is possible to evaluate quantitatively topological distribution of the matter separated from the contacts into the environment; it is possible to determine morphological characteristics of the matter separated from the contact. During investigation of the lifetime of contacts there were determined: value of the expense of the material of contacts; composition of the expense of the material of contacts; composition of the matter separated from the contact; distribution of the separated matter depending on the electrical parameters and number of the closings of contact in the case of different compositions of contacts and in different conditions. Strength of the contacts' alloys related to the electrical load was investigated at the special stand [ru

Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

International Nuclear Information System (INIS)

Blanchard, Paul; Bertness, Kris A; Harvey, Todd; Sanford, Norman

2014-01-01

Contact resistivity ρ c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R 23  and four-point collinear resistances R 23collinear  were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R 23 −R 23collinear  is equal to the total contact resistance R c , the distributed-current-flow contact model shows that R 23 −R 23collinear  ≪ R c when ρ c is sufficiently small. Indeed, the measured R 23 −R 23collinear  was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρ c from these data. However, it was possible to calculate an upper bound on ρ c for each device based on the largest possible value of R 23 −R 23collinear . In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρ c with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ c ranged from 4.2 × 10 −6  to 7.6 × 10 −6  Ω cm 2 , indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW four

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Science.gov (United States)

Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

2002-07-01

We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

Evaluation of contact resistance between carbon fiber/epoxy composite laminate and printed silver electrode for damage monitoring

International Nuclear Information System (INIS)

Jeon, Eun Beom; Kim, Hak Sung; Takahashi, Kosuke

2014-01-01

An addressable conducting network (ACN) makes it possible to monitor the condition of a structure using the electrical resistance between electrodes on the surface of a carbon fiber reinforced plastics (CFRP) structure. To improve the damage detection reliability of the ACN, the contact resistances between the electrodes and CFRP laminates needs to be minimized. In this study, silver nanoparticle electrodes were fabricated via printed electronics techniques on a CFRP composite. The contact resistance between the silver electrodes and CFRP were measured with respect to various fabrication conditions such as the sintering temperature of the silver nano-ink and the surface roughness of the CFRP laminates. The interfaces between the silver electrode and carbon fibers were observed using a scanning electron microscope (SEM). Based on this study, it was found that the lowest contact resistance of 0.3664Ω could be achieved when the sintering temperature of the silver nano-ink and surface roughness were 120 degree C and 0.230 a, respectively.

Electrical contact arrangement for a coating process

Science.gov (United States)

Kabagambe, Benjamin; McCamy, James W; Boyd, Donald W

2013-09-17

A protective coating is applied to the electrically conductive surface of a reflective coating of a solar mirror by biasing a conductive member having a layer of a malleable electrically conductive material, e.g. a paste, against a portion of the conductive surface while moving an electrodepositable coating composition over the conductive surface. The moving of the electrodepositable coating composition over the conductive surface includes moving the solar mirror through a flow curtain of the electrodepositable coating composition and submerging the solar mirror in a pool of the electrodepositable coating composition. The use of the layer of a malleable electrically conductive material between the conductive member and the conductive surface compensates for irregularities in the conductive surface being contacted during the coating process thereby reducing the current density at the electrical contact area.

Electrical Contacts in Monolayer Arsenene Devices.

Science.gov (United States)

Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Xiao, Lin; Liu, Junku; Pan, Feng; Lu, Jing

2017-08-30

Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

The nature of electrical interaction of Schottky contacts

International Nuclear Information System (INIS)

Torkhov, N. A.

2011-01-01

Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances ( i,j ), concentration of doping impurities in the semiconductor N D , and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height φ b ). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the “dead” zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the “dead” zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.

Vertical Soil Profiling Using a Galvanic Contact Resistivity Scanning Approach

Directory of Open Access Journals (Sweden)

Luan Pan

2014-07-01

Full Text Available Proximal sensing of soil electromagnetic properties is widely used to map spatial land heterogeneity. The mapping instruments use galvanic contact, capacitive coupling or electromagnetic induction. Regardless of the type of instrument, the geometrical configuration between signal transmitting and receiving elements typically defines the shape of the depth response function. To assess vertical soil profiles, many modern instruments use multiple transmitter-receiver pairs. Alternatively, vertical electrical sounding can be used to measure changes in apparent soil electrical conductivity with depth at a specific location. This paper examines the possibility for the assessment of soil profiles using a dynamic surface galvanic contact resistivity scanning approach, with transmitting and receiving electrodes configured in an equatorial dipole-dipole array. An automated scanner system was developed and tested in agricultural fields with different soil profiles. While operating in the field, the distance between current injecting and measuring pairs of rolling electrodes was varied continuously from 40 to 190 cm. The preliminary evaluation included a comparison of scan results from 20 locations to shallow (less than 1.2 m deep soil profiles and to a two-layer soil profile model defined using an electromagnetic induction instrument.

Irreversibility in transformation behavior of equiatomic nickel-titanium alloy by electrical resistivity measurement

International Nuclear Information System (INIS)

Matsumoto, Hitoshi

2004-01-01

Measurements of the electrical resistivity were precisely performed on shape memory Ni 50 Ti 50 alloy in order to reveal the irreversible behavior of the thermoelastic martensitic transformation with thermal cycling. The hump in the electrical resistivity during cooling is enhanced with increasing the number of complete thermal cycles to result in a peak, although no peak in the electrical resistivity is observed on the reverse transformation during heating. The electrical resistivity in the low-temperature phase, of which the temperature dependence is linear, increases with increasing the number of complete thermal cycles. The temperature coefficient of the electrical resistivity in the temperature region of the high-temperature phase increases with elevating the temperature. The transformation is strongly influenced by incomplete thermal cycles to result in a peak in the resistivity even on the reverse transformation after incomplete thermal cycling. It is thought that the anomalous behavior such as enhancement of a resistivity-peak, the increase in the electrical resistivity of the low-temperature phase, and the nonlinear relation between the resistivity and the temperature in the high-temperature phase are attributable to the appearance of an intermediate phase stabilized by transformation-induced defects, the accumulation of the transformation-induced defects, and the electron scattering due to the softening of a phonon mode in the high-temperature phase, respectively. It proved useful to make more accurate measurements of the electrical resistivity in order to investigate the intrinsic behavior of the transformation in NiTi

Effects of pressure and temperature on thermal contact resistance between different materials

Directory of Open Access Journals (Sweden)

Zhao Zhe

2015-01-01

Full Text Available To explore whether pressure and temperature can affect thermal contact resistance, we have proposed a new experimental approach for measurement of the thermal contact resistance. Taking the thermal contact resistance between phenolic resin and carbon-carbon composites, cuprum, and aluminum as the examples, the influence of the thermal contact resistance between specimens under pressure is tested by experiment. Two groups of experiments are performed and then an analysis on influencing factors of the thermal contact resistance is presented in this paper. The experimental results reveal that the thermal contact resistance depends not only on the thermal conductivity coefficient of materials, but on the interfacial temperature and pressure. Furthermore, the thermal contact resistance between cuprum and aluminum is more sensitive to pressure and temperature than that between phenolic resin and carbon-carbon composites.

Numerical analysis of historical change of the electric resistance in the TVF glass melter

International Nuclear Information System (INIS)

Kawamura, Takumi; Sakai, Takaaki

2004-09-01

Concerning to the TVF glass melter in the Tokai reprocessing center, it is being planned to detect the deposition of the noble metals in a glass melter and remove them periodically to extend the melter lifetime. Numerical analysis has been performed for the electric resistance evaluation in order to estimate the sedimentation situation and current density distribution from the melter resistance. Electric field analysis was carried out by using MAGNA-FIM code and the influence factors to melter resistance was evaluated concerning to the sedimentation situation and glass temperature. In addition, transitions of the sedimentation and melter resistances were estimated from the operation history of the TVF-1 melter. As a result, the followings were obtained. From the evaluation of the influence factors to melter resistance, it turns out that the volume and the noble metals concentration of a sediment influence notably to melter resistance when the sediment contacts to electrodes. The sediment temperature at the melter bottom has small sensitivity in case of the non-contact situation. The glass temperature in the melter upper part, however, has big sensitivity in melter resistance irrespective of the existence of contact. Based on the above sensitivity evaluation, Numerical analysis was carried out supposing the sedimentation process which suits to a melter resistance fall during the operation history of the TVF-1 melter. As input conditions, the voltage between electrodes and the temperature in the melter were referred from the operation history data. It was assumed that the noble metals concentration in a sediment increased constantly for every operation batch. As a result, the characteristics of melter resistance history was reproduced successfully in general. Thereby, it became prospective to predict the sedimentation situation by using the new resistance analysis model for the glass melter. (author)

Silicide-to-silicon specific contact resistance characterization

NARCIS (Netherlands)

Stavitski, N.

2009-01-01

The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

A simulation study on the electrical structure of interdigitated back-contact silicon solar cells

Science.gov (United States)

Kang, Min Gu; Song, Hee-eun; Kim, Soo Min; Kim, Donghwan

2015-05-01

In this paper, a simulation for interdigitated back-contact (IBC) silicon solar cells was performed by using Silvaco TCAD ATLAS to investigate the cell's electrical properties. The impacts of various parameters, including the depth of the front surface field(FSF), the FSF peak doping concentration, the depths of the emitter and the back surface field(BSF), the peak doping concentrations of the emitter and BSF, the base doping, and the bulk lifetime on the output characteristics like the light current-voltage curves and the internal quantum efficiency of the IBC solar cell, were investigated. The light absorption was determined by adjusting the antireflection coating and the Al thickness. The FSF must be thin and have a low doping concentration for high-efficiency IBC cells. If the conversion efficiency is to be improved, a thick emitter and a high doping concentration are needed. Because of the low resistivity of the Si substrate, the series resistance was reduced, but recombination was increased. With a high-resistivity Si substrate, the opposite trends were observed. By counter-balancing the series resistance and the recombination, we determined by simulation that the optimized resistivity for the IBC cells was 1 Ω·cm. Because all metal electrodes in the IBC cells are located on the back side, a higher minority carrier lifetime showed a higher efficiency. After the various parameters had been optimized, texturing and surface recombination were added into the simulation. The simulated IBC cells showed a short-circuit current density of 42.89 mA/cm2, an open-circuit voltage of 714.8 mV, a fill factor of 84.04%, and a conversion efficiency of 25.77%.

On the behavior and stability of a liquid metal in quasi-planar electric contacts

Science.gov (United States)

Samuilov, S. D.

2016-06-01

The contacts between conductors formed under relatively low pressures can be treated as quasi-planar. Melting of the material of such contacts upon the passage of electric current is used in some technological processes, but the behavior of liquid in these conditions has not been analyzed. In this study, such an estimate was obtained for specific conditions appearing under electric-pulse compacting (briquetting) of metal shavings. Analysis of derived relations shows that this estimate is valid for any quasi-2D contacts upon passage of a pulsed current of duration from microseconds to milliseconds. It is shown that the spacing between contact surfaces decreases, the liquid metal is extruded in the lateral directions, and the area of the contact and its conductivity increase. Sausage-type magnetohydrodynamic (MHD) instability and overheating instability do not evolve in these conditions because the instability wavelength is larger than the rated thickness of the molten layer; screw MHD instability can appear in slower processes.

Coke fouling monitoring by electrical resistivity

Energy Technology Data Exchange (ETDEWEB)

Bombardelli, Clovis; Mari, Livia Assis; Kalinowski, Hypolito Jose [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Programa de Pos-Graduacao em Engenharia Eletrica e Informatica Industrial (CPGEI)

2008-07-01

An experimental method to simulate the growth of the coke fouling that occurs in the oil processing is proposed relating the thickness of the encrusted coke to its electrical resistivity. The authors suggest the use of the fouling electrical resistivity as a transducer element for determining its thickness. The sensor is basically two electrodes in an electrically isolated device where the inlay can happen in order to compose a purely resistive transducer. Such devices can be easily constructed in a simple and robust form with features capable to face the high temperatures and pressures found in relevant industrial processes. For validation, however, it is needed a relationship between the electrical resistivity and the fouling thickness, information not yet found in the literature. The present work experimentally simulates the growth of a layer of coke on an electrically insulating surface, equipped with electrodes at two extremities to measure the electrical resistivity during thermal cracking essays. The method is realized with a series of consecutive runs. The results correlate the mass of coke deposited and its electrical resistivity, and it can be used to validate the coke depositions monitoring employing the resistivity as a control parameter. (author)

Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1998-01-01

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

2016-01-01

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.

2016-11-30

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Thermal resistance of indium coated sapphire–copper contacts below 0.1K

CERN Document Server

Eisel, T; Koettig, T

2014-01-01

High thermal resistances exist at ultra-low temperatures for solid-solid interfaces. This is especially true for pressed metal-sapphire joints, where the heat is transferred by phonons only. For such pressed joints it is difficult to achieve good physical, i.e. thermal contacts due to surface irregularities in the microscopic or larger scale. Applying ductile indium as an intermediate layer reduces the thermal resistance of such contacts. This could be proven by measurements of several researchers. However, the majority of the measurements were performed at temperatures higher than 1 K. Consequently, it is difficult to predict the thermal resistance of pressed metal-sapphire joints at temperatures below 1 K. In this paper the thermal resistances across four different copper-sapphire-copper sandwiches are presented in a temperature range between 30 mK and 100 mK. The investigated sandwiches feature either rough or polished sapphire discs (empty set 20 mm x 1.5 mm) to investigate the phonon scattering at the bo...

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

Energy Technology Data Exchange (ETDEWEB)

Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

2014-10-28

Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

Spectral Induced Polarization of Low-pH Concrete. Influence of the Electrical Double Layer and Pore Size

Science.gov (United States)

Leroy, P. G.; Gaboreau, S.; Zimmermann, E.; Hoerdt, A.; Claret, F.; Huisman, J. A.; Tournassat, C.

2017-12-01

Low-pH concretes are foreseen to be used in nuclear waste disposal. Understanding their reactivity upon the considered host-rock is a key point. Evolution of mineralogy, porosity, pore size distribution and connectivity can be monitored in situ using geophysical methods such as induced polarization (IP). This electrical method consists of injecting an alternating current and measuring the resulting voltage in the porous medium. Spectral IP (SIP) measurements in the 10 mHz to 10 kHz frequency range were carried out on low-pH concrete and cement paste first in equilibrium and then in contact with a CO2 enriched and diluted water. We observed a very high resistivity of the materials (> 10 kOhm m) and a strong phase shift between injected current and measured voltage (superior to 40 mrad and above 100 mrad for frequencies > 100 Hz). These observations were modelled by considering membrane polarization with ion exclusion in nanopores whose surface electrical properties were computed using a basic Stern model of the cement/water interface. Pore size distribution was deduced from SIP and was compared to the measured ones. In addition, we observed a decrease of the material resistivity due to the dissolution of cement in contact with external water. Our results show that SIP may be a valuable method to monitor the mineralogy and the petrophysical and transport properties of cements.

Use of electrical resistivity to detect underground mine voids in Ohio

Science.gov (United States)

Sheets, Rodney A.

2002-01-01

Electrical resistivity surveys were completed at two sites along State Route 32 in Jackson and Vinton Counties, Ohio. The surveys were done to determine whether the electrical resistivity method could identify areas where coal was mined, leaving air- or water-filled voids. These voids can be local sources of potable water or acid mine drainage. They could also result in potentially dangerous collapse of roads or buildings that overlie the voids. The resistivity response of air- or water-filled voids compared to the surrounding bedrock may allow electrical resistivity surveys to delineate areas underlain by such voids. Surface deformation along State Route 32 in Jackson County led to a site investigation, which included electrical resistivity surveys. Several highly resistive areas were identified using axial dipole-dipole and Wenner resistivity surveys. Subsequent drilling and excavation led to the discovery of several air-filled abandoned underground mine tunnels. A site along State Route 32 in Vinton County, Ohio, was drilled as part of a mining permit application process. A mine void under the highway was instrumented with a pressure transducer to monitor water levels. During a period of high water level, electrical resistivity surveys were completed. The electrical response was dominated by a thin, low-resistivity layer of iron ore above where the coal was mined out. Nearby overhead powerlines also affected the results.

Processing and properties of silver-metal oxide electrical contact materials

Directory of Open Access Journals (Sweden)

Nadežda M. Talijan

2012-12-01

Full Text Available The presented study gives a brief overview of the experimental results of investigations of different production technologies of silver-metal oxide electrical contact materials in relation: processing method - properties. The two most common routes of production, i.e. internal oxidation/ingot metallurgy and powder metallurgy are demonstrated on the example of Ag-CdO and Ag-ZnO materials. For illustration of alternative processing routes that provide higher dispersion of metal-oxide particles in silver matrix more environmentally friendly Ag-SnO2 contact materials are used. Processing of electrical contact materials by mechanical mixing of starting powders in high energy ball mill is presented. The obtained experimental results of application of different methods of introduction of SnO2 nanoparticles in the silver matrix such as conventional powder metallurgy mixing and template method are given and discussed in terms of their influence on microstructure and physical properties (density, hardness and electrical conductivity of the prepared Ag-SnO2 electrical contact materials.

Effect of air confinement on thermal contact resistance in nanoscale heat transfer

Science.gov (United States)

Pratap, Dheeraj; Islam, Rakibul; Al-Alam, Patricia; Randrianalisoa, Jaona; Trannoy, Nathalie

2018-03-01

Here, we report a detailed analysis of thermal contact resistance (R c) of nano-size contact formed between a Wollaston wire thermal probe and the used samples (fused silica and titanium) as a function of air pressure (from 1 Pa to 105 Pa). Moreover, we suggest an analytical model using experimental data to extract R c. We found that for both samples, the thermal contact resistance decreases with increasing air pressure. We also showed that R c strongly depends on the thermal conductivity of materials keeping other parameters the same, such as roughness of the probe and samples, as well as the contact force. We provide a physical explanation of the R c trend with pressure and thermal conductivity of the materials: R c is ascribed to the heat transfer through solid-solid (probe-sample) contact and confined air at nanoscale cavities, due to the rough nature of the materials in contact. The contribution of confined air on heat transfer through the probe sample contact is significant at atmospheric pressure but decreases as the pressure decreases. In vacuum, only the solid-solid contact contributes to R c. In addition, theoretical calculations using the well-known acoustic and diffuse mismatch models showed a high thermal conductivity material that exhibits high heat transmission and consequently low R c, supporting our findings.

Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

Directory of Open Access Journals (Sweden)

M.-H. Liao

2013-09-01

Full Text Available In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10−9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm−3. The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10−4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm.

Electrical Resistivity Measurements: a Review

Science.gov (United States)

Singh, Yadunath

World-wide interest on the use of ceramic materials for aerospace and other advanced engineering applications, has led to the need for inspection techniques capable of detecting unusually electrical and thermal anomalies in these compounds. Modern ceramic materials offer many attractive physical, electrical and mechanical properties for a wide and rapidly growing range of industrial applications; moreover specific use may be made of their electrical resistance, chemical resistance, and thermal barrier properties. In this review, we report the development and various techniques for the resistivity measurement of solid kind of samples.

Series Resistance Analysis of Passivated Emitter Rear Contact Cells Patterned Using Inkjet Printing

Directory of Open Access Journals (Sweden)

Martha A. T. Lenio

2012-01-01

Full Text Available For higher-efficiency solar cell structures, such as the Passivated Emitter Rear Contact (PERC cells, to be fabricated in a manufacturing environment, potentially low-cost techniques such as inkjet printing and metal plating are desirable. A common problem that is experienced when fabricating PERC cells is low fill factors due to high series resistance. This paper identifies and attempts to quantify sources of series resistance in inkjet-patterned PERC cells that employ electroless or light-induced nickel-plating techniques followed by copper light-induced plating. Photoluminescence imaging is used to determine locations of series resistance losses in these inkjet-patterned and plated PERC cells.

Evaluation of electrical resistivity anisotropy in geological mapping ...

African Journals Online (AJOL)

user

Key words: Electrical resistivity anisotropy, radial vertical electrical sounding, anisotropy polygons. INTRODUCTION ... electrical resistivity survey in the geological interpretation ... resistivity and other electrical or electromagnetic based.

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Science.gov (United States)

Wang, Cong; Kim, Nam-Young

2012-02-07

Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

Electroless Ni-B plating for electrical contact applications

Directory of Open Access Journals (Sweden)

Dervos, C. T.

2005-12-01

Full Text Available Electroless Ni-B plating has been tried on steel substrate in an effort to employ low-cost starting materials for electrical contacts or connectors. By selected conditions of heat treatment in a high vacuum environment the plating can acquire Cr-equivalent hardness without the effluents of the hard chromium plating process. The surfaces were characterized under scanning electron microscope and by XRD. The fabricated materials were tested under corrosion conditions by polarization measurements. Semispherical nickel plated steel joints were tested in a computer controlled contact make-break apparatus, under simultaneous application of a mechanical and a low-voltage electrical load for 20,000 cycles. After heat treatment the plating acquires a crystalline structure with very good adhesion to the substrate material. Corrosion decreases and increased hardness is obtained. The surface is also characterized by good electrical properties during aging accelerated tests.

Se ha investigado la deposición de Ni-B por vía química sobre un substrato de acero, con el fin de poder emplear materiales de bajo coste para los contactos o conectores eléctricos. Mediante condiciones específicas de tratamiento térmico en un ambiente de alto vacío, la deposición puede alcanzar durezas equivalentes al cromo (Cr sin los efluentes del proceso de cromado duro. Las superficies se caracterizaron en el microscopio electrónico de barrido y mediante DRX. Los materiales fabricados se ensayaron bajo condiciones de corrosión utilizando mediciones de polarización. Se ensayaron las juntas semiesféricas de acero niquelado en un equipo de contactos controlado por ordenador bajo la aplicación simultánea de una carga mecánica y de una carga eléctrica de bajo voltaje durante 20.000 ciclos. Después del tratamiento térmico, el recubrimiento adquiere una estructura cristalina con muy buena adherencia al material del substrato. Se consigue una menor corrosión y mayor

Testing and Modeling of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Song, Quanfeng

together two or three cylindrical parts as well as disc-ring pairs of dissimilar metals. The tests have demonstrated the effectiveness of the model. A theoretical and experimental study is performed on the contact resistance aiming at a more reliable model for numerical simulation of resistance welding......As a part of the efforts towards a professional and reliable numerical tool for resistance welding engineers, this Ph.D. project is dedicated to refining the numerical models related to the interface behavior. An FE algorithm for the contact problems in resistance welding has been developed...... for the formulation, and the interfaces are treated in a symmetric pattern. The frictional sliding contact is also solved employing the constant friction model. The algorithm is incorporated into the finite element code. Verification is carried out in some numerical tests as well as experiments such as upsetting...

Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2014-01-01

For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

Science.gov (United States)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Characterizations of contact and sheet resistances of vertically aligned carbon nanotube forests with intrinsic bottom contacts

Energy Technology Data Exchange (ETDEWEB)

Jiang Yingqi; Wang Pengbo; Lin Liwei, E-mail: jiangyq99@gmail.com, E-mail: lwlin@me.berkeley.edu [Mechanical Engineering Department, University of California at Berkeley (United States)

2011-09-07

Comprehensive studies on the sheet and contact resistances of vertically aligned carbon nanotube (CNT) forests with as-grown bottom contacts to the metal layer have been conducted. Using microfabrication and four distinct methods: (1) the transfer length method (TLM), (2) the contact chain method, (3) the Kelvin method, and (4) the four point probe method, we have designed multiple testing devices to characterize the resistances of CNT-forest-based devices. Experimental results show that devices based on stripe-shaped CNT forests 100 {mu}m in height and 100 {mu}m in width have a sheet resistance of approximately 100{Omega}/{open_square}. The corresponding specific contact resistance to the molybdenum layer is roughly 5 x 10{sup 4} {Omega} {mu}m{sup 2}. Consistency of the results from the four different methods validates the study. After two months of storage of the CNT forest samples in open air, less than 0.9% deviations in the resistance values were observed. We further demonstrated one application of CNT forests as an NH{sub 3} gas sensor and measured 0.5 ppm of sensing resolution with a detection response time of 1 min.

Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

Science.gov (United States)

Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

2017-12-22

Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

Electrical resistivity measurements to predict abrasion resistance

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 31; Issue 2. Electrical resistivity measurements to predict abrasion resistance of rock aggregates ... It was seen that correlation coefficients were increased for the rock classes. In addition ...

Effects of a Low Dose of Gamma Radiation on the Morphology, and the Optical and the Electrical Properties of an ITO Thin Film as an Electrode for Solar Cell Applications

Science.gov (United States)

Kakil, Shaida Anwer; Sabr, Barzan Nehmat; Hana, Lary Slewa; Abbas, Tariq Abdul-Hameed; Hussin, Sarwin Yaseen

2018-03-01

The present study focuses on the influence of gamma irradiation induced through the morphology effects on the modification of the optical and the electrical properties of transparent indium tin oxide (ITO) thin films. The prepared samples were exposed to low gamma radiation at room temperature with doses 3.90 Gy, 7.81Gy, 11.7 Gy, and 15.62 Gy from a Cs-137 radioisotope source. The surface structures before and after irradiation were analyzed. Atomic force microscopy was performed on two samples, one before and one after irradiation, to investigate any change in the morphology. The roughness parameters, such as S z , S v , S c , and S q , were found for the surface of the porous films after the gamma irradiation. As the dose of the irradiation was increased, the light absorption of the films increased, and the value of the optical energy gap changed from 3.83 to 3.73 eV while the refractive index changed from 1.9 to 2.05, as determined by using the Swanipol method. Electrical properties, such as the electrical sheet resistance, contact resistance, and current transfer length, were measured by using the four-point probe and the transmission line method (TLM). The determined electrical sheet resistance, contact resistance, and current transfer length were 14.54 Ω, 0.235 Ω, and 0.04 mm before gamma irradiation and 17.61 Ω, 0.1316 Ω, and 0.0025 mm after gamma irradiation. The decrease in the value of the contact resistance due to the irradiation led to a decrease in the current loss while the increase in the sheet resistance will cause the loss of some current through the film.

Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs

Czech Academy of Sciences Publication Activity Database

Dubecký, F.; Dubecký, M.; Hubík, Pavel; Kindl, Dobroslav; Gombia, E.; Baldini, M.; Nečas, V.

2013-01-01

Roč. 82, APR (2013), s. 72-76 ISSN 0038-1101 Institutional support: RVO:68378271 Keywords : Schottky barrier * low-bias transport * semi-insulating GaAs * low work -function * high resistence * low leakage current * blocking contact Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.514, year: 2013

Electric field effect on the critical current of SNS-contact

International Nuclear Information System (INIS)

Rakhmanov, A.L.; Rozhkov, A.V.

1995-01-01

Electric field effect on the SNS-contact critical current is investigated in the Ginzburg-Landau theory approximation. It is shown that the electric field may cause a notable increase of the contact critical current especially if the sample temperature is close to the temperature of a superconducting transition of T sc normal layer. Electric field effect is increased with the reduction of film thickness, but it can strong enough for thick films as well at temperature close to T sc . 11 refs.; 4 figs

Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

Science.gov (United States)

Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

2014-06-01

A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

Pulse number control of electrical resistance for multi-level storage based on phase change

International Nuclear Information System (INIS)

Nakayama, K; Takata, M; Kasai, T; Kitagawa, A; Akita, J

2007-01-01

Phase change nonvolatile memory devices composed of SeSbTe chalcogenide semiconductor thin film were fabricated. The resistivity of the SeSbTe system was investigated to apply to multi-level data storage. The chalcogenide semiconductor acts as a programmable resistor that has a large dynamic range. The resistance of the chalcogenide semiconductor can be set to intermediate resistances between the amorphous and crystalline states using electric pulses of a specified power, and it can be controlled by repetition of the electric pulses. The size of the memory cell used in this work is 200 nm thick with a contact area of 1 μm diameter. The resistance of the chalcogenide semiconductor gradually varies from 41 kΩ to 840 Ω within octal steps. The resistance of the chalcogenide semiconductor decreases with increasing number of applied pulses. The step-down characteristic of the resistance can be explained as the crystalline region of the active phase change region increases with increasing number of applied pulses. The extent of crystallization was also estimated by the overall resistivity of the active region of the memory cell

Laser-induced change of electrical resistivity of metals and its applications

Science.gov (United States)

Pawlak, Ryszard; Kostrubiec, Franciszek; Tomczyk, Mariusz; Walczak, Maria

2005-01-01

Applying of laser alloying for modification of electrical resistivity of metals with significant importance in electrical and electronic engineering and utilization of this method for producing passive elements of electric circuit have been presented. The alloyed metals were obtained by means of laser beams with different wave length and various mode of working (cw or pulse), by different methods for the supplying of alloying elements. It was possible to form alloyed layers of metals forming different types of metallurgical systems: with full (Cu-Au, Cu-Ni) or partial solubility (Mo-Ni, W-Ni, Cu-Al, Ag-Sn), insoluble (Mo-Au and Cu-Cr) and immiscible (Ag-Ni and Ni-Au) metals, with metallic as well as non-metallic additions (oxide). It has been shown as well that it is possible to achieve resistive elements modified in whole cross section, in a single technological process. The results of systematic investigations into the resistivity of alloyed metals in the temperature range of 77-450 K have been presented. The alloyed layers, obtained, were characterised by a range of resistivity from 2.8 x 10-8 Ωm (Cu-Cr) to 128 x 10-8 Ωm (W-Ni). The microstructure and composition of alloyed layers were examined by means of SEM-microscopy and EDX analyser. In selected cases it was shown how results of investigations could be utilized for modification of surface layer of contact materials or to optimize the resistance of laser welded joints. In addition the results of investigations of new developed microtechnology -- producing micro-areas with extremely high resistivity -- have been presented.

Investigate the electrical and thermal properties of the low temperature resistant silver nanowire fabricated by two-beam laser technique

Science.gov (United States)

He, Gui-Cang; Dong, Xian-Zi; Liu, Jie; Lu, Heng; Zhao, Zhen-Sheng

2018-05-01

A two-beam laser fabrication technique is introduced to fabricate the single silver nanowire (AgNW) on polyethylene terephthalate (PET) substrate. The resistivity of the AgNW is (1.31 ± 0.05) × 10-7 Ω·m, which is about 8 times of the bulk silver resistivity (1.65 × 10-8 Ω·m). The AgNW electrical resistance is measured in temperature range of 10-300 K and fitted with the Bloch-Grüneisen formula. The fitting results show that the residue resistance is 153 Ω, the Debye temperature is 210 K and the electron-phonon coupling constant is (5.72 ± 0.24) × 10-8 Ω·m. Due to the surface scattering, the Debye temperature and the electron-phonon coupling constant are lower than those of bulk silver, and the residue resistance is bigger than that of bulk silver. Thermal conductivity of the single AgNW is calculated in the corresponding temperature range, which is the biggest at the temperature approaching the Debye temperature. The AgNW on PET substrate is the low temperature resistance material and is able to be operated stably at such a low temperature of 10 K.

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R

2018-01-11

The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

Optimized design of a low-resistance electrical conductor for the multimegahertz range

Science.gov (United States)

Kurs, André; Kesler, Morris; Johnson, Steven G.

2011-04-01

We propose a design for a conductive wire composed of several mutually insulated coaxial conducting shells. With the help of numerical optimization, it is possible to obtain electrical resistances significantly lower than those of a heavy-gauge copper wire or litz wire in the 2-20 MHz range. Moreover, much of the reduction in resistance can be achieved for just a few shells; in contrast, litz wire would need to contain ˜104 strands to perform comparably in this frequency range.

In-situ study of cascade defects in silver by simultaneous transmission electron microscopy and electrical resistivity measurements at low temperatures

International Nuclear Information System (INIS)

Haga, K.; King, W.E.; Merkle, K.L.; Meshii, M.

1985-12-01

A helium-cooled double-tilt specimen stage for transmission electron microscopy (TEM) with the capability of simultaneous electrical resistivity measurements was constructed and used to study defect-production, migration, clustering and recovery processes in ion-irradiated silver. Vacuum-evaporated thin film specimens were irradiated with 1 MeV Kr + -ions up to a dose of 4.0 x 10 10 ions/cm 2 , at T = 10 0 K in the microscope, using the HVEM-tandem accelerator ion beam interface system in the Argonne National Laboratory Electron Microscopy Center. Cascade defect formation during ion bombardment at the low temperature was directly observed both by TEM and electrical resistivity measurements. Ion bombardment created groups of defect clusters with strong strain fields which gave rise to TEM contrast. The specimen resistivity was increased by 16% during the irradiation. Subsequent microstructural changes and resistivity recovery during isochronal annealing were monitored up to room temperature. 58.3% of the irradiation induced resistivity was recovered, while significant reduction in the size of black spot defect clusters was observed by TEM. A small fraction of clusters disappeared, while no nucleation of new defect clusters was observed

Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Musztyfaga-Staszuk M.

2015-09-01

Full Text Available This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace and unconventional (2. Selective Laser Sintering. Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM. Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.

Non-contact magnetic coupled power and data transferring system for an electric vehicle

International Nuclear Information System (INIS)

Matsuda, Y.; Sakamoto, H.

2007-01-01

We have developed a system which transmits electric power and communication data simultaneously in a non-contact method using a magnetic coupling coil. Already, we are developing the fundamental technology of a non-contact charging system, and this is applied in electric shavers, electric toothbrushes, etc. Moreover, basic experiments are being conducted for applying this non-contact charging system to electric equipments such as an electric vehicle (EV), which is a zero emission vehicle and environmentally excellent and will be the transportation means of the next generation. The technology can also be applied in other electronic equipment, etc. However, since the power supply route for these individual devices is independent, the supply system is complicated. EV also has to perform the transmission of electric power and the transmission of information (data), such as the amount of the charge, in a separate system, and thus is quite complicated. In this study, by performing simultaneously the transmission of electric power and information (data) using magnetic coupling technology in which it does not contact, the basic experiment aimed at attaining and making unification of a system simple was conducted, and the following good results were obtained: (1) Electric power required for load can be transmitted easily by non-contact. (2) A signal can easily be transmitted bidirectionally by non-contact. (3) This system is reliable, and is widely applicable

Speci﬿c contact resistance of phase change materials to metal electrode

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha A.A.; Wolters, Robertus A.M.

2010-01-01

For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the speci﬿c contact resistance (Ͽc ) of doped Sb2Te and Ge2Sb2Te5 to TiW

Delineation of graves using electrical resistivity tomography

Science.gov (United States)

Nero, Callistus; Aning, Akwasi Acheampong; Danuor, Sylvester K.; Noye, Reginald M.

2016-03-01

A suspected old royal cemetery has been surveyed at the Kwame Nkrumah University of Science and Technology (KNUST) campus, Kumasi, Ghana using Electrical Resistivity Tomography (ERT) with the objective of detecting graves in order to make informed decisions with regard to the future use of the area. The survey was conducted on a 10,000 m2 area. Continuous Vertical Electrical Sounding (CVES) was combined with the roll along technique for 51 profiles with 1 m probe separation separated by 2 m. Inverted data results indicated wide resistivity variations ranging between 9.34 Ωm and 600 Ωm in the near surface. Such heterogeneity suggests a disturbance of the soil at this level. Both high (≥ 600 Ωm) and low resistivity (≤ 74.7 Ωm) anomalies, relative to background levels, were identified within the first 4 m of the subsurface. These were suspected to be burial tombs because of their rectangular geometries and resistivity contrasts. The results were validated with forward numerical modeling results. The study area is therefore an old cemetery and should be preserved as a cultural heritage site.

CoSix contact resistance after etching and ashing plasma exposure

International Nuclear Information System (INIS)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya

2009-01-01

The authors investigated the contact resistance fluctuation caused by CoSi x damage in plasma etching and ashing processes. They found that CoSi x layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH 3 F is used instead of CF 4 during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H 2 /N 2 ashing process in which O 2 was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi x . This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Electrically conductive bulk composites through a contact-connected aggregate.

Directory of Open Access Journals (Sweden)

Ahsan I Nawroj

Full Text Available This paper introduces a concept that allows the creation of low-resistance composites using a network of compliant conductive aggregate units, connected through contact, embedded within the composite. Due to the straight-forward fabrication method of the aggregate, conductive composites can be created in nearly arbitrary shapes and sizes, with a lower bound near the length scale of the conductive cell used in the aggregate. The described instantiation involves aggregate cells that are approximately spherical copper coils-of-coils within a polymeric matrix, but the concept can be implemented with a wide range of conductor elements, cell geometries, and matrix materials due to its lack of reliance on specific material chemistries. The aggregate cell network provides a conductive pathway that can have orders of magnitude lower resistance than that of the matrix material--from 10(12 ohm-cm (approx. for pure silicone rubber to as low as 1 ohm-cm for the silicone/copper composite at room temperature for the presented example. After describing the basic concept and key factors involved in its success, three methods of implementing the aggregate into a matrix are then addressed--unjammed packing, jammed packing, and pre-stressed jammed packing--with an analysis of the tradeoffs between increased stiffness and improved resistivity.

Effect of heat treatment on the electrical resistance of photoresist as related to radioisotopic thermoelectric generator aging

International Nuclear Information System (INIS)

Johnson, R.T. Jr.

1979-03-01

Photoresist is used in electrical contact definition and processing in radioisotopic thermoelectric generators. Inadequate removal of material during processing could lead to electrical shorting when exposed to the high temperature use environment. This effect has been simulated through studies of the electrical resistance of thin layers of photoresist (Kodak Metal Etch Resist) on glass (Corning 7052) with tungsten electrodes. Results show that both the photoresist and the glass contribute to the resistance. The glass resistance decreases with increasing temperature and becomes significant at high temperatures. Annealing studies on the photoresist show that the resistance of the photoresist decreases by over five orders of magnitude upon annealing to 500 0 C, with a corresponding decrease in activation energy from 0.27 eV (350 0 C anneal) to 0.10 eV (500 0 C anneal). Time dependent decreases in resistance of the photoresist were also measured for up to 8 to 9 days during high temperature anneals. Some electrolytic transport of tungsten may occur through the photoresist at high temperatures. Results are compared with data on thermoelectric generators and show that photoresist could cause the electrical aging (voltage degradation) problem observed in some generators

Characterizations of Soil Profiles Through Electric Resistivity Ratio

Directory of Open Access Journals (Sweden)

Chik Z

2015-04-01

Full Text Available This paper presents how near surface soil characteristics are obtained through soil electric resistivity ratio from soil apparent resistivity profile. In recent advances of electrical sensors, soil apparent resistivity is implemented as nondestructive method for obtaining near surface soil profile. Although geo-electric techniques offer an improvement to traditional soil sampling methods, the resulting data are still often misinterpreted for obtaining soil characteristics through apparent electrical resistivity in the field. Because, soil resistivity as before rain and after rain are changeable due to the presence of more moisture contents in field investigations. In this study, the parameter of soil electric resistivity ratio is incorporated to obtain reliable near surface soil profiles from apparent resistivity of adjacent two layers in soil. The variations of potential differences are taken into account for using four probes method to get the soil apparent resistivity profile. The research is significant for simpler and faster soil characterizations using resistivity ratio of apparent resistivity in soil investigations.

Improvement of the electrical contact resistance at rough interfaces using two dimensional materials

Energy Technology Data Exchange (ETDEWEB)

Hu, Jianchen; Pan, Chengbin; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Li, Heng [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE, Peking University, Beijing 100871 (China); Shen, Panpan; Sun, Hui; Duan, Huiling [State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering, Peking University, Beijing 100871 (China)

2015-12-07

Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.

Electrical capacity and resistance determination of emitting electric transducer

International Nuclear Information System (INIS)

Alba Fernandez, J.; Ramis Soriano, J.

2000-01-01

In this work we calculate the electrical resistance and capacity of emitting electric transducer, which is mainly formed, in direct relationship with its properties, by a ceramic capacitor. Our aim is to motivate the students with an attractive element in order to carry out traditional measurements of the charge and discharge transients of a capacitor, implementing high resistance setups. (Author) 5 refs

Temperature dependence of the electrical resistivity of amorphous Co80-xErxB20 alloys

International Nuclear Information System (INIS)

Touraghe, O.; Khatami, M.; Menny, A.; Lassri, H.; Nouneh, K.

2008-01-01

The temperature dependence of the electrical resistivity of amorphous Co 80-x Er x B 20 alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T min . In addition, the resistivity shows quadratic temperature behavior in the interval T min < T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity α shows a change in structural short range occurring in the composition range 8-9 at%

Pressure effect on electrical resistivity of Y1-xGdxCo2

International Nuclear Information System (INIS)

Nakama, T.; Takaesu, Y.; Yagasaki, K.; Sakai, E.; Kurita, N.; Hedo, M.; Uwatoko, Y.; Burkov, A.T.

2006-01-01

Electrical resistivity of Y 1-x Gd x Co 2 alloy system has been measured at temperatures from 2 to 300K in magnetic field up to 15T and under pressure up to 10GPa. The compounds with the composition near to phase boundary between paramagnetic and ferromagnetic ground state (x c ∼0.12) show strong enhancement of electrical resistivity at low temperatures. Large positive magnetoresistance was observed in ferromagnetic alloys in composition range 0.15 1-x Gd x Co 2 at low temperatures is in agreement with the variation of magnetoresistance with the composition

Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

KAUST Repository

Debnath, Ratan

2010-01-01

With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface. © 2010 American Institute of Physics.

A new method of making ohmic contacts to p-GaN

Energy Technology Data Exchange (ETDEWEB)

Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

2016-12-01

Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

In situ electric fields causing electro-stimulation from conductor contact of charged human

International Nuclear Information System (INIS)

Nagai, T.; Hirata, A.

2010-01-01

Contact currents flow from/into a human body when touching an object such as a metal structure with a different electric potential. These currents can stimulate muscle and peripheral nerves. In this context, computational analyses of in situ electric fields caused by the contact current have been performed, while their effectiveness for transient contact currents has not well been investigated. In the present study, using an anatomically based human model, a dispersive finite-difference time-domain model was utilised to computed transient contact current and in situ electric fields from a charged human. Computed in situ electric fields were highly localised in the hand. In order to obtain an insight into the relationship between in situ electric field and electro-stimulation, cell-maximum and 5-mm averaged in situ electric fields were computed and compared with strength-duration curves. The comparison suggests that both measures could be larger than thresholds derived from the strength- duration curves with parameters used in previous studies. (authors)

Determination of electrical resistivity of dry coke beds

Energy Technology Data Exchange (ETDEWEB)

Eidem, P.A.; Tangstad, M.; Bakken, J.A. [NTNU, Trondheim (Norway)

2008-02-15

The electrical resistivity of the coke bed is of great importance when producing FeMn, SiMn, and FeCr in a submerged arc furnace. In these processes, a coke bed is situated below and around the electrode tip and consists of metallurgical coke, slag, gas, and metal droplets. Since the basic mechanisms determining the electrical resistivity of a coke bed is not yet fully understood, this investigation is focused on the resistivity of dry coke beds consisting of different carbonaceous materials, i.e., coke beds containing no slag or metal. A method that reliably compares the electrical bulk resistivity of different metallurgical cokes at 1500{sup o} C to 1600{sup o}C is developed. The apparatus is dimensioned for industrial sized materials, and the electrical resistivity of anthracite, charcoal, petroleum coke, and metallurgical coke has been measured. The resistivity at high temperatures of the Magnitogorsk coke, which has the highest resistivity of the metallurgical cokes investigated, is twice the resistivity of the Corus coke, which has the lowest electrical resistivity. Zdzieszowice and SSAB coke sort in between with decreasing resistivities in the respective order. The electrical resistivity of anthracite, charcoal, and petroleum coke is generally higher than the resistivity of the metallurgical cokes, ranging from about two to about eight times the resistivity of the Corus coke at 1450{sup o}C. The general trend is that the bulk resistivity of carbon materials decreases with increasing temperature and increasing particle size.

The Effect of Tensile Hysteresis and Contact Resistance on the Performance of Strain-Resistant Elastic-Conductive Webbing

Directory of Open Access Journals (Sweden)

Tien-Wei Shyr

2011-01-01

Full Text Available To use e-textiles as a strain-resistance sensor they need to be both elastic and conductive. Three kinds of elastic-conductive webbings, including flat, tubular, and belt webbings, made of Lycra fiber and carbon coated polyamide fiber, were used in this study. The strain-resistance properties of the webbings were evaluated in stretch-recovery tests and measured within 30% strain. It was found that tensile hysteresis and contact resistance significantly influence the tensile elasticity and the resistance sensitivity of the webbings. The results showed that the webbing structure definitely contributes to the tensile hysteresis and contact resistance. The smaller the friction is among the yarns in the belt webbing, the smaller the tensile hysteresis loss. However the close proximity of the conductive yarns in flat and tubular webbings results in a lower contact resistance.

Impact of incomplete metal coverage on the electrical properties of metal-CNT contacts: A large-scale ab initio study

Energy Technology Data Exchange (ETDEWEB)

Fediai, Artem, E-mail: artem.fediai@nano.tu-dresden.de; Ryndyk, Dmitry A. [Institute for Materials Science and Max Bergman Center of Biomaterials, TU Dresden, 01062 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden (Germany); Seifert, Gotthard [Theoretical Chemistry, TU Dresden, 01062 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden (Germany); Dresden Center for Computational Materials Science, TU Dresden, 01062 Dresden (Germany); Mothes, Sven; Schroter, Michael; Claus, Martin [Chair for Electron Devices and Integrated Circuits, TU Dresden, 01062 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden (Germany); Cuniberti, Gianaurelio [Institute for Materials Science and Max Bergman Center of Biomaterials, TU Dresden, 01062 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden (Germany); Dresden Center for Computational Materials Science, TU Dresden, 01062 Dresden (Germany)

2016-09-05

Using a dedicated combination of the non-equilibrium Green function formalism and large-scale density functional theory calculations, we investigated how incomplete metal coverage influences two of the most important electrical properties of carbon nanotube (CNT)-based transistors: contact resistance and its scaling with contact length, and maximum current. These quantities have been derived from parameter-free simulations of atomic systems that are as close as possible to experimental geometries. Physical mechanisms that govern these dependences have been identified for various metals, representing different CNT-metal interaction strengths from chemisorption to physisorption. Our results pave the way for an application-oriented design of CNT-metal contacts.

Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Energy Technology Data Exchange (ETDEWEB)

Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

2017-08-01

Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

Electrical Resistance and Transport Numbers of Ion-Exchange Membranes Used in Electrodialytic Soil Remediation

DEFF Research Database (Denmark)

Hansen, Henrik; Ottosen, Lisbeth M.; Villumsen, Arne

1999-01-01

Electrodialytic soil remediation is a recently developed method to decontaminate heavy metal polluted soil using ion-exchange membranes. In this method one side of the ion-exchange membrane is in direct contact with the polluted soil. It is of great importance to know if this contact with the soil...... different electrodialytic soil remediation experiments. The experiments showed that after the use in electrodialytic soil remediation, the ion-exchange membranes had transport numbers in the same magnitude as new membranes. The electrical resistance for six membranes did not differ from that of new...

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

Institute of Scientific and Technical Information of China (English)

Yuehui Jia; Xin Gong; Pei Peng; Zidong Wang; Zhongzheng Tian; Liming Ren; Yunyi Fu; Han Zhang

2016-01-01

Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

Electrical resistivity for detecting subsurface non-aqueous phase liquids: A progress report

International Nuclear Information System (INIS)

Lee, K.H.; Shan, C.; Javandel, I.

1995-06-01

Soils and groundwater have been contaminated by hazardous substances at many places in the United States and many other countries. The contaminants are commonly either petroleum products or industrial solvents with very low solubility in water. These contaminants are usually called non-aqueous phase liquids (NAPLs). The cost of cleaning up the affected sites in the United States is estimated to be of the order of 100 billion dollars. In spite of the expenditure of several billion dollars during the last 15 years, to date, very few, if any major contaminated site has been restored. The presence of NAPL pools in the subsurface is believed to be the main cause for the failure of previous cleanup activities. Due to their relatively low water solubility, and depending on their volume, it takes tens or even hundreds of years to deplete the NAPL sources if they are not removed from the subsurface. The intrinsic electrical resistivity of most NAPLs is typically in the range of 10 7 to 10 12 Ω-m, which is several orders of magnitude higher than that of groundwater containing dissolved solids (usually in the range of a few Ω-m to a few thousand Ω-m). Although a dry soil is very resistive, the electrical resistivity of a wet soil is on the order of 100 Ω-m and is dependent on the extent of water saturation. For a given soil, the electrical resistivity increases with decrease of water saturation. Therefore, if part of the pore water is replaced by a NAPL, the electrical resistivity will increase. At many NAPL sites, both the vadose and phreatic zones can be partially occupied by NAPL pools. It is the great contrast in electrical resistivity between the NAPLs and groundwater that may render the method to be effective in detecting subsurface NAPLs at contaminated sites. The following experiments were conducted to investigate the change of the electrical resistivity of porous media when diesel fuel (NAPL) replaces part of the water

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

Science.gov (United States)

Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

2008-07-01

It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

Calculation of Equivalent Resistance for Ground Wires Twined with Armor Rods in Contact Terminals

Directory of Open Access Journals (Sweden)

Gang Liu

2018-03-01

Full Text Available Ground wire breakage accidents can destroy the stable operation of overhead lines. The excessive temperature increase arising from the contact resistance between the ground wire and armor rod in the contact terminal is one of the main reasons causing the breakage of ground wires. Therefore, it is necessary to calculate the equivalent resistance for ground wires twined with armor rods in contact terminals. According to the actual distribution characteristics of the contact points in the contact terminal, a three-dimensional electromagnetic field simulation model of the contact terminal was established. Based on the model, the current distribution in the contact terminal was obtained. Subsequently, the equivalent resistance of a ground wire twined with the armor rod in the contact terminal was calculated. The effects of the factors influencing the equivalent resistance were also discussed. The corresponding verification experiments were conducted on a real ground wire on a contact terminal. The measurement results of the equivalent resistance for the armor rod segment showed good agreement with the electromagnetic modeling results.

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

Science.gov (United States)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Science.gov (United States)

Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2018-01-01

Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

Electron–electron interactions and the electrical resistivity of lithium

Indian Academy of Sciences (India)

The electron–electron interactions in lithium metal have been examined keeping in view the recent developments. The contribution of the electron–electron Umklapp scattering processes in the electrical resistivity of lithium at low temperatures has been evaluated using a simplified spherical Fermi surface model with ...

Electrical measurements on submicronic synthetic conductors : carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Langer, L [Unite de Physico-Chimie et de Physique des Materiaux, Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium); Stockman, L [Lab. voor Vaste Stof-Fysika en Magnetisme, Katholieke Univ. Leuven (Belgium); Heremans, J P [Physics Dept., General Motors Research, Warren, MI (United States); Bayot, V [Unite de Physico-Chimie et de Physique des Materiaux, Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium); Olk, C H [Physics Dept., General Motors Research, Warren, MI (United States); Haesendonck, C van [Lab. voor Vaste Stof-Fysika en Magnetisme, Katholieke Univ. Leuven (Belgium); Bruynseraede, Y [Lab. voor Vaste Stof-Fysika en Magnetisme, Katholieke Univ. Leuven (Belgium); Issi, J P [Unite de Physico-Chimie et de Physique des Materiaux, Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium)

1995-03-15

The synthesis of very small samples has raised the need for a drastic miniaturization of the classical four-probe technique in order to realize electrical resistance measurements. Two methods to realize electrical contacts on very small fibers are described here. Using classical photolithography the electrical resistivity of a submicronic catalytic chemical vapour deposited filament is estimated. Scanning tunneling microscopy (STM) lithography allowed to attach small gold contacts to a small bundle (diameter 50 nm) of carbon nanotubes. This bundle is found to exhibit a semimetallic behavior at higher temperature and an unexpected drop of the electrical resistivity at lower temperature. (orig.)

Geo electrical Resistivity Survey for Ancient Tunnel Detection at Bukit Tenggek, Setiu, Terengganu

International Nuclear Information System (INIS)

Siti Nazira Masrom; Mohd Hariri Arifin; Abd Rahim Harun; Abdul Rahim Samsudin

2011-01-01

Geo electrical resistivity survey was conducted in the Bukit Tenggek, Setiu, Terengganu to detect the possible existence of an ancient tunnel which is believed to be in the area. Geo electrical resistivity method was found very effective in searching for archaeological exploration and underground structures (tunnels and artifacts). Geo electrical resistivity survey was carried out using Terrameter ABEM SAS1000 and Wenner array electrode configuration. The survey area is located in a damp valley with a stream across the region. 2-D resistivity image showed the existence of anomalies in several areas that can be associated with the structure. Low resistivity value represents the estimated existence of the old tunnel, while isolated rounded anomalies are believed to be associated with barrels/artifacts. 3-D resistivity profiles, shows anomalies that may be caused by the existence of a horizontal and two vertical tunnels (shaft). However, the drillings work need to be done to figure out the exact cause of these anomalies. (author)

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Science.gov (United States)

Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

2017-10-01

In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction

International Nuclear Information System (INIS)

Li Songlin; Gang Jianlei; Li Jie; Chu Haifeng; Zheng Dongning

2008-01-01

Current-voltage (I-V) characteristics are investigated in a low-initial-resistance Ag/Pr 0.7 Ca 0.3 MnO 3 /Pt sandwich structure. It is found that the junction can show stable low and high resistance states in ±0.3 V voltage sweeping cycles. The set and reset voltage values are, respectively, +0.1 V and -0.2 V, which are very low as compared with those reported previously. Furthermore, the I-V curves in both resistance states exhibit rather linear behaviour, without any signature of metal/insulator interface effects. This implies that the Schottky interface mechanism might not be an indispensable factor for the colossal electroresistance effect. The origin of low switching voltages is attributed to the reduced effective distance for electric field action due to the sufficient oxygen content of the PCMO layer. The underlying physics is discussed in terms of the filament network model together with the field-induced oxygen vacancy motion model

Cone-based Electrical Resistivity Tomography

Science.gov (United States)

Pidlisecky, A.; Knight, R.; Haber, E.

2005-05-01

Determining the 3D spatial distribution of subsurface properties is a critical part of managing the clean-up of contaminated sites. Most standard hydrologic methods sample small regions immediately adjacent to wells or testing devices. This provides data which are not representative of the entire region of interest. Furthermore, at many contaminated sites invasive methods are not acceptable, due to the risks associated with contacting and spreading the contaminants. To address these issues, we have developed a minimally invasive technology that provides information about the 3D distribution of electrical conductivity. This new technique, cone-based electrical resistivity tomography (C-bert), involves placing several permanent current electrodes in the subsurface and using electrodes mounted on a cone penetrometer to measure the resultant potential field while advancing the cone into the subsurface. In addition to potential field measurements, we obtain the standard suite of cone-penetration measurements, including high resolution resistivity logs; these data can then be used to constrain the inversion of the potential field data. A major challenge of working with these data is that the cone penetrometer is highly conductive, and thus presents a large local perturbation around the measurement location. As the cone is very small (approximately 30mm in diameter) with respect to the total model space, explicitly modeling the cone is computationally demanding. We developed a method for solving the forward model that reduces computational time by an order of magnitude. This solution method, iteratively determined boundary conditions, makes it possible to correct for the cone effect before inversion of the data. Results from synthetic experiments suggest that the C-bert method of data acquisition can result in high quality electrical conductivity images of the subsurface. We tested the practicality of this technique by performing a field test of the C-bert system to image

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

Energy Technology Data Exchange (ETDEWEB)

Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Directory of Open Access Journals (Sweden)

Wojciech Macherzynski

2016-01-01

Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

Science.gov (United States)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

State Waste Discharge Permit Application: Electric resistance tomography testing

Energy Technology Data Exchange (ETDEWEB)

1994-04-01

This permit application documentation is for a State Waste Discharge Permit issued in accordance with requirements of Washington Administrative Code 173-216. The activity being permitted is a technology test using electrical resistance tomography. The electrical resistance tomography technology was developed at Lawrence Livermore National Laboratory and has been used at other waste sites to track underground contamination plumes. The electrical resistance tomography technology measures soil electrical resistance between two electrodes. If a fluid contaminated with electrolytes is introduced into the soil, the soil resistance is expected to drop. By using an array of measurement electrodes in several boreholes, the areal extent of contamination can be estimated. At the Hanford Site, the purpose of the testing is to determine if the electrical resistance tomography technology can be used in the vicinity of large underground metal tanks without the metal tank interfering with the test. It is anticipated that the electrical resistance tomography technology will provide a method for accurately detecting leaks from the bottom of underground tanks, such as the Hanford Site single-shell tanks.

State Waste Discharge Permit Application: Electric resistance tomography testing

International Nuclear Information System (INIS)

1994-04-01

This permit application documentation is for a State Waste Discharge Permit issued in accordance with requirements of Washington Administrative Code 173-216. The activity being permitted is a technology test using electrical resistance tomography. The electrical resistance tomography technology was developed at Lawrence Livermore National Laboratory and has been used at other waste sites to track underground contamination plumes. The electrical resistance tomography technology measures soil electrical resistance between two electrodes. If a fluid contaminated with electrolytes is introduced into the soil, the soil resistance is expected to drop. By using an array of measurement electrodes in several boreholes, the areal extent of contamination can be estimated. At the Hanford Site, the purpose of the testing is to determine if the electrical resistance tomography technology can be used in the vicinity of large underground metal tanks without the metal tank interfering with the test. It is anticipated that the electrical resistance tomography technology will provide a method for accurately detecting leaks from the bottom of underground tanks, such as the Hanford Site single-shell tanks

Increased resistance of contact lens related bacterial biofilms to antimicrobial activity of soft contact lens care solutions

Science.gov (United States)

Szczotka-Flynn, Loretta B.; Imamura, Yoshifumi; Chandra, Jyotsna; Yu, Changping; Mukherjee, Pranab K.; Pearlman, Eric; Ghannoum, Mahmoud A.

2014-01-01

PURPOSE To determine if clinical and reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus form biofilms on silicone hydrogel contact lenses, and ascertain antimicrobial activities of contact lens care solutions. METHODS Clinical and American Type Culture Collection (ATCC) reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus were incubated with lotrafilcon A lenses under conditions that facilitate biofilm formation. Biofilms were quantified by quantitative culturing (colony forming units, CFUs), and gross morphology and architecture were evaluated using scanning electron microscopy (SEM) and confocal microscopy. Susceptibilities of the planktonic and biofilm growth phases of the bacteria to five common multipurpose contact lens care solutions and one hydrogen peroxide care solution were assessed. RESULTS P. aeruginosa, S. marcescens, and S. aureus reference and clinical strains formed biofilms on lotrafilcon A silicone hydrogel contact lenses, as dense networks of cells arranged in multiple layers with visible extracellular matrix. The biofilms were resistant to commonly used biguanide preserved multipurpose care solutions. P. aeruginosa and S. aureus biofilms were susceptible to a hydrogen peroxide and a polyquaternium preserved care solution, whereas S. marcescens biofilm was resistant to a polyquaternium preserved care solution but susceptible to hydrogen peroxide disinfection. In contrast, the planktonic forms were always susceptible. CONCLUSIONS P. aeruginosa, S. marcescens, and S. aureus form biofilms on lotrafilcon A contact lenses, which in contrast to planktonic cells, are resistant to the antimicrobial activity of several soft contact lens care products. PMID:19654521

Multi-Electrode Resistivity Probe for Investigation of Local Temperature Inside Metal Shell Battery Cells via Resistivity: Experiments and Evaluation of Electrical Resistance Tomography

Directory of Open Access Journals (Sweden)

Xiaobin Hong

2015-01-01

Full Text Available Direct Current (DC electrical resistivity is a material property that is sensitive to temperature changes. In this paper, the relationship between resistivity and local temperature inside steel shell battery cells (two commercial 10 Ah and 4.5 Ah lithium-ion cells is innovatively studied by Electrical Resistance Tomography (ERT. The Schlumberger configuration in ERT is applied to divide the cell body into several blocks distributed in different levels, where the apparent resistivities are measured by multi-electrode surface probes. The investigated temperature ranges from −20 to 80 °C. Experimental results have shown that the resistivities mainly depend on temperature changes in each block of the two cells used and the function of the resistivity and temperature can be fitted to the ERT-measurement results in the logistical-plot. Subsequently, the dependence of resistivity on the state of charge (SOC is investigated, and the SOC range of 70%–100% has a remarkable impact on the resistivity at low temperatures. The proposed approach under a thermal cool down regime is demonstrated to monitor the local transient temperature.

Electrical Resistance Based Damage Modeling of Multifunctional Carbon Fiber Reinforced Polymer Matrix Composites

Science.gov (United States)

Hart, Robert James

In the current thesis, the 4-probe electrical resistance of carbon fiber-reinforced polymer (CFRP) composites is utilized as a metric for sensing low-velocity impact damage. A robust method has been developed for recovering the directionally dependent electrical resistivities using an experimental line-type 4-probe resistance method. Next, the concept of effective conducting thickness was uniquely applied in the development of a brand new point-type 4-probe method for applications with electrically anisotropic materials. An extensive experimental study was completed to characterize the 4-probe electrical resistance of CFRP specimens using both the traditional line-type and new point-type methods. Leveraging the concept of effective conducting thickness, a novel method was developed for building 4-probe electrical finite element (FE) models in COMSOL. The electrical models were validated against experimental resistance measurements and the FE models demonstrated predictive capabilities when applied to CFRP specimens with varying thickness and layup. These new models demonstrated a significant improvement in accuracy compared to previous literature and could provide a framework for future advancements in FE modeling of electrically anisotropic materials. FE models were then developed in ABAQUS for evaluating the influence of prescribed localized damage on the 4-probe resistance. Experimental data was compiled on the impact response of various CFRP laminates, and was used in the development of quasi- static FE models for predicting presence of impact-induced delamination. The simulation-based delamination predictions were then integrated into the electrical FE models for the purpose of studying the influence of realistic damage patterns on electrical resistance. When the size of the delamination damage was moderate compared to the electrode spacing, the electrical resistance increased by less than 1% due to the delamination damage. However, for a specimen with large

Production technology optimization of biscuit baked by electric-contact way

Science.gov (United States)

Sidorenko, G. A.; Popov, V. P.; Khanina, T. V.; Maneeva, E. Sh; Krasnova, M. S.

2018-03-01

Electric-contact way of baking allows one to maintain more nutrients used in biscuit making. As a result of the biscuit production technology optimization, it is established that 30-62,5% is an optimal amount of starch brought instead of flour; 184-200% is optimal amount of egg melange; at this a complex indicator of organoleptic properties will be more than 340 degrees, a complex indicator of physical and chemical properties will be more than 3,3 degrees, and specific costs of energy spent on the biscuit electric-contact baking process will be less than 100 W/kg.

The Preceding Voltage Pulse and Separation Welding Mechanism of Electrical Contacts

DEFF Research Database (Denmark)

Yang, Xiao Cheng; Huang, Jiang; Li, Zhen Biao

2016-01-01

In order to obtain a better understanding of the welding mechanism in contact separation, electrical endurance tests were conducted with AgSnO2 and AgNi contacts on a simulation test device. Waveforms of contact displacement, contact voltage, and current were recorded with LabVIEW during the tests......, and changes in a contact gap and heights of pips with increases in operation cycles were observed through charge-coupled device cameras. The resultant test results show that welding in separation is accompanied with a preceding voltage pulse which represents arc rather than contact bounce arc....

Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Guillen, C.; Herrero, J

2003-05-01

Both frontal and back electrical contacts have been developed onto polyimide sheets (Kapton KJ[reg]) as alternative substrates to the conventional glasses, for application in lightweight and flexible thin film photovoltaic devices. Transparent and conductive indium tin oxide (ITO) thin films have been deposited by r.f.-magnetron sputtering as the frontal electrical contact. On the other hand, Mo, Cr and Ni layers have been prepared by e-gun evaporation for the back electrical connections. ITO films deposited onto polyimide have shown similar optical transmittance and higher electrical conductivity than onto glass substrates. The transmittance decreases and the conductivity increases after heating at 400 sign C in vacuum atmosphere. Mo, Cr and Ni layers deposited onto polyimide showed similar structure and electrical conductivity than onto conventional glasses. The properties of Mo and Cr layers remained unchanged after heating at 400 sign C in selenium atmosphere.

Thermal contact resistance measurement of conduction cooled binary current lead joint block in cryocooler based self field I-V characterization facility

Energy Technology Data Exchange (ETDEWEB)

Kundu, Ananya, E-mail: ananya@ipr.res.in; Das, Subrat Kumar; Agarwal, Anees Bano Pooja; Pradhan, Subrata [Institute for Plasma Research, Bhat, Gandhinagar, Gujarat 382428 (India)

2016-05-23

In the present study thermal resistance of conduction cooled current lead joint block employing two different interfacial material namely AlN sheet and Kapton Film have been studied in the temperature range 5K-35K. In each case, the performance of different interlayer materials e.g. Indium foil for moderately pressurized contacts (contact pressure <1 MPa), and Apiezon N Grease, GE varnish for low pressurized contact (contact pressure <1 MPa) is studied. The performances of AlN joint with Indium foil and with Apeizon N Grease are studied and it is observed that the contact resistance reduces more with indium foil as compared to greased contact. The contact resistance measurements of Kapton film with Apiezon N grease and with GE varnish were also carried out in the same temperature range. A comparative study of AlN joint with Indium foil and Kapton with GE varnish as filler material is carried out to demonstrate better candidate material among Kapton and AlN for a particular filler material in the same temperature range.

Influence of electrical resistivity and machining parameters on electrical discharge machining performance of engineering ceramics.

Science.gov (United States)

Ji, Renjie; Liu, Yonghong; Diao, Ruiqiang; Xu, Chenchen; Li, Xiaopeng; Cai, Baoping; Zhang, Yanzhen

2014-01-01

Engineering ceramics have been widely used in modern industry for their excellent physical and mechanical properties, and they are difficult to machine owing to their high hardness and brittleness. Electrical discharge machining (EDM) is the appropriate process for machining engineering ceramics provided they are electrically conducting. However, the electrical resistivity of the popular engineering ceramics is higher, and there has been no research on the relationship between the EDM parameters and the electrical resistivity of the engineering ceramics. This paper investigates the effects of the electrical resistivity and EDM parameters such as tool polarity, pulse interval, and electrode material, on the ZnO/Al2O3 ceramic's EDM performance, in terms of the material removal rate (MRR), electrode wear ratio (EWR), and surface roughness (SR). The results show that the electrical resistivity and the EDM parameters have the great influence on the EDM performance. The ZnO/Al2O3 ceramic with the electrical resistivity up to 3410 Ω·cm can be effectively machined by EDM with the copper electrode, the negative tool polarity, and the shorter pulse interval. Under most machining conditions, the MRR increases, and the SR decreases with the decrease of electrical resistivity. Moreover, the tool polarity, and pulse interval affect the EWR, respectively, and the electrical resistivity and electrode material have a combined effect on the EWR. Furthermore, the EDM performance of ZnO/Al2O3 ceramic with the electrical resistivity higher than 687 Ω·cm is obviously different from that with the electrical resistivity lower than 687 Ω·cm, when the electrode material changes. The microstructure character analysis of the machined ZnO/Al2O3 ceramic surface shows that the ZnO/Al2O3 ceramic is removed by melting, evaporation and thermal spalling, and the material from the working fluid and the graphite electrode can transfer to the workpiece surface during electrical discharge

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.

2013-10-22

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

Experimental determination of fuel-cladding thermal contact resistance

International Nuclear Information System (INIS)

Maglic, K.; Zivotic, Z.

1968-01-01

Thermal resistance of the UO 2 fuel - Zr-2 cladding was measure by the same experimental apparatus which was used for measuring the thermal conductivity of ceramic fuel. Thermal resistance was measure for a series of heat flux values and the dependence of thermal resistance on the flux is given within in the range from 0.66 W/cm 2 to 13.3 W/cm 2 . The temperature drop on the contact surface was between 39 deg C and 181.7 deg C, proportional to the increase of the heat flux [sr

Electrical resistivity and thermopower of ErCo3 under hydrostatic pressure

International Nuclear Information System (INIS)

Nakama, T; Niki, H; Nakamura, D; Takaesu, Y; Hedo, M; Yagasaki, K; Uchima, K; Gratz, E; Burkov, A T

2009-01-01

The magnetic state of the Co 3d-electron subsystem of RCo 3 compounds (R=rare-earth elements) with the rhombohedral PuNi 3 -type structure strongly depends on external parameters. In order to clarify the effect of pressure on the magnetic state of the itinerant Co 3d-electrons, we have measured the electrical resistivity and thermopower at temperatures from 2 K to 300 K under hydrostatic pressures up to 2 GPa. Both, ρ and S show anomalies at critical temperature of metamagnetic transition T m . With increasing pressure T m , determined from the temperature-dependent resistivity and thermopower, decreases and apparently vanishes at P ∼ 0.7 GPa. The electrical resistivity and thermopower at low temperatures show abrupt changes at P ∼ 0.7 GPa, indicating a pressure-induced phase transition.

Comparison of properties of silver-metal oxide electrical contact materials

Directory of Open Access Journals (Sweden)

Ćosović V.

2012-01-01

Full Text Available Changes in physical properties such as density, porosity, hardness and electrical conductivity of the Ag-SnO2 and Ag-SnO2In2O3 electrical contact materials induced by introduction of metal oxide nanoparticles were investigated. Properties of the obtained silver-metal oxide nanoparticle composites are discussed and presented in comparison to their counterparts with the micro metal oxide particles as well as comparable Ag-SnO2WO3 and Ag-ZnO contact materials. Studied silvermetal oxide composites were produced by powder metallurgy method from very fine pure silver and micro- and nanoparticle metal oxide powders. Very uniform microstructures were obtained for all investigated composites and they exhibited physical properties that are comparable with relevant properties of equivalent commercial silver based electrical contact materials. Both Ag-SnO2 and Ag- SnO2In2O3 composites with metal oxide nanoparticles were found to have lower porosity, higher density and hardness than their respective counterparts which can be attributed to better dispersion hardening i.e. higher degree of dispersion of metal oxide in silver matrix.

Role of aluminum in silver paste contact to boron-doped silicon emitters

Directory of Open Access Journals (Sweden)

Wei Wu

2017-01-01

Full Text Available The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern′s line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

Science.gov (United States)

Roldán, J. B.; Miranda, E.; González-Cordero, G.; García-Fernández, P.; Romero-Zaliz, R.; González-Rodelas, P.; Aguilera, A. M.; González, M. B.; Jiménez-Molinos, F.

2018-01-01

A multivariate analysis of the parameters that characterize the reset process in Resistive Random Access Memory (RRAM) has been performed. The different correlations obtained can help to shed light on the current components that contribute in the Low Resistance State (LRS) of the technology considered. In addition, a screening method for the Quantum Point Contact (QPC) current component is presented. For this purpose, the second derivative of the current has been obtained using a novel numerical method which allows determining the QPC model parameters. Once the procedure is completed, a whole Resistive Switching (RS) series of thousands of curves is studied by means of a genetic algorithm. The extracted QPC parameter distributions are characterized in depth to get information about the filamentary pathways associated with LRS in the low voltage conduction regime.

Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

Science.gov (United States)

Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

2018-05-09

Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Science.gov (United States)

Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

2016-05-01

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo

2016-12-28

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules.

Science.gov (United States)

Cho, Kyungjune; Pak, Jinsu; Kim, Jae-Keun; Kang, Keehoon; Kim, Tae-Young; Shin, Jiwon; Choi, Barbara Yuri; Chung, Seungjun; Lee, Takhee

2018-05-01

Although 2D molybdenum disulfide (MoS 2 ) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high-performance 2D MoS 2 -based devices. In this regard, many studies have been conducted to improve the carrier-injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time-consuming and low-yield transfer processes on sub-micrometer MoS 2 flakes. Here, a simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS 2 channels. The selectively deposited thiol-molecules via the vapor-deposition process provide additional tunneling paths at the contact regions, improving the carrier-injection properties with lower activation energies in MoS 2 field-effect transistors. Additionally, by inserting thiol-molecules at the only one contact region, asymmetric carrier-injection is feasible depending on the temperature and gate bias. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

Science.gov (United States)

Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

2018-03-01

Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

CoSi{sub x} contact resistance after etching and ashing plasma exposure

Energy Technology Data Exchange (ETDEWEB)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya [Nagasaki Production Division 1, Sony Semiconductor Kyushu Corporation, 1883-43 Tsukuba-machi, Isahaya-shi, Nagasaki 854-0065 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan)

2009-07-15

The authors investigated the contact resistance fluctuation caused by CoSi{sub x} damage in plasma etching and ashing processes. They found that CoSi{sub x} layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH{sub 3}F is used instead of CF{sub 4} during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H{sub 2}/N{sub 2} ashing process in which O{sub 2} was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi{sub x}. This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Using tensorial electrical resistivity survey to locate fault systems

International Nuclear Information System (INIS)

Monteiro Santos, Fernando A; Plancha, João P; Marques, Jorge; Perea, Hector; Cabral, João; Massoud, Usama

2009-01-01

This paper deals with the use of the tensorial resistivity method for fault orientation and macroanisotropy characterization. The rotational properties of the apparent resistivity tensor are presented using 3D synthetic models representing structures with a dominant direction of low resistivity and vertical discontinuities. It is demonstrated that polar diagrams of the elements of the tensor are effective in delineating those structures. As the apparent resistivity tensor shows great inefficacy in investigating the depth of the structures, it is advised to accomplish tensorial surveys with the application of other geophysical methods. An experimental example, including tensorial, dipole–dipole and time domain surveys, is presented to illustrate the potentiality of the method. The dipole–dipole model shows high-resistivity contrasts which were interpreted as corresponding to faults crossing the area. The results from the time domain electromagnetic (TEM) sounding show high-resistivity values till depths of 40–60 m at the north part of the area. In the southern part of the survey area the soundings show an upper layer with low-resistivity values (around 30 Ω m) followed by a more resistive bedrock (resistivity >100 Ω m) at a depth ranging from 15 to 30 m. The soundings in the central part of the survey area show more variability. A thin conductive overburden is followed by a more resistive layer with resistivity in the range of 80–1800 Ω m. The north and south limits of the central part of the area as revealed by TEM survey are roughly E–W oriented and coincident with the north fault scarp and the southernmost fault detected by the dipole–dipole survey. The pattern of the polar diagrams calculated from tensorial resistivity data clearly indicates the presence of a contact between two blocks at south of the survey area with the low-resistivity block located southwards. The presence of other two faults is not so clear from the polar diagram patterns, but

Bottom-up realization and electrical characterization of a graphene-based device

International Nuclear Information System (INIS)

Maffucci, A; Micciulla, F; Cataldo, A; Bellucci, S; Miano, G

2016-01-01

We propose a bottom-up procedure to fabricate an easy-to-engineer graphene-based device, consisting of a microstrip-like circuit where few-layer graphene nanoplatelets are used to contact two copper electrodes. The graphene nanoplatelets are obtained by the microwave irradiation of intercalated graphite, i.e., an environmentally friendly, fast and low-cost procedure. The contact is created by a bottom-up process, driven by the application of a DC electrical field in the gap between the electrodes, yielding the formation of a graphene carpet. The electrical resistance of the device has been measured as a function of the gap length and device temperature. The possible use of this device as a gas sensor is demonstrated by measuring the sensitivity of its electrical resistance to the presence of gas. The measured results demonstrate a good degree of reproducibility in the fabrication process, and the competitive performance of devices, thus making the proposed technique potentially attractive for industrial applications. (paper)

Application of two electrical methods for the rapid assessment of freezing resistance in Salix epichloro

Energy Technology Data Exchange (ETDEWEB)

Tsarouhas, V.; Kenney, W.A.; Zsuffa, L. [University of Toronto, Ontario (Canada). Faculty of Forestry

2000-09-01

The importance of early selection of frost-resistant Salix clones makes it desirable to select a rapid and accurate screening method for assessing freezing resistance among several genotypes. Two electrical methods, stem electrical impedance to 1 and 10 khz alternating current, and electrolyte leakage of leaf tissue, were evaluated for detecting freezing resistance on three North America Salix epichloro Michx., clones after subjecting them to five different freezing temperatures (-1, -2, -3, -4, and -5 deg C). Differences in the electrical impedance to 1 and 10 kHz, and the ratio of the impedance at the two frequencies (low/high) before and after the freezing treatment (DZ{sub low}, DZ{sub high}, and DZ{sub ratio}, respectively) were estimated. Electrolyte leakage was expressed as relative conductivity (RC{sub t}) and index of injury (IDX{sub t}). Results from the two methods, obtained two days after the freezing stress, showed that both electrical methods were able to detect freezing injury in S. eriocephala. However, the electrolyte leakage method detected injury in more levels of freezing stress (-3, -4, and -5 deg C) than the impedance (-4, and -5 deg C), it assessed clonal differences in S. eriocephala freezing resistance, and it was best suited to correlate electrical methods with the visual assessed freezing injury. No significant impedance or leakage changes were found after the -1 and -2 deg C freezing temperatures. (author)

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.

2016-01-01

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.

Science.gov (United States)

Chambers, Scott A; Gu, Meng; Sushko, Peter V; Yang, Hao; Wang, Chongmin; Browning, Nigel D

2013-08-07

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low frequency noise in the unstable contact region of Au-to-Au microcontact for microelectromechanical system switches

Science.gov (United States)

Qiu, Haodong; Wang, Hong; Ke, Feixiang

2014-06-01

The noise behavior of Au-to-Au microcontact for microelectromechanical system switches has been experimentally studied in the unstable contact region. The results suggest that the electrical conduction remains nonmetallic at the initial stage during contact formation due to the existence of alien films, and traps in the alien layer located at the contact interface could play an important role in determining the conduction noise. The conduction fluctuation induced by electron trapping-detrapping associated with the hydrocarbon layer is found to be an intrinsic noise source contributing to the low frequency noise in the unstable contact region.

Low frequency noise in the unstable contact region of Au-to-Au microcontact for microelectromechanical system switches

Energy Technology Data Exchange (ETDEWEB)

Qiu, Haodong; Wang, Hong, E-mail: ewanghong@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Ke, Feixiang [Temasek Laboratories at Nanyang Technological University, Research Techno Plaza, Singapore 637553 (Singapore)

2014-06-23

The noise behavior of Au-to-Au microcontact for microelectromechanical system switches has been experimentally studied in the unstable contact region. The results suggest that the electrical conduction remains nonmetallic at the initial stage during contact formation due to the existence of alien films, and traps in the alien layer located at the contact interface could play an important role in determining the conduction noise. The conduction fluctuation induced by electron trapping-detrapping associated with the hydrocarbon layer is found to be an intrinsic noise source contributing to the low frequency noise in the unstable contact region.

Low frequency noise in the unstable contact region of Au-to-Au microcontact for microelectromechanical system switches

International Nuclear Information System (INIS)

Qiu, Haodong; Wang, Hong; Ke, Feixiang

2014-01-01

The noise behavior of Au-to-Au microcontact for microelectromechanical system switches has been experimentally studied in the unstable contact region. The results suggest that the electrical conduction remains nonmetallic at the initial stage during contact formation due to the existence of alien films, and traps in the alien layer located at the contact interface could play an important role in determining the conduction noise. The conduction fluctuation induced by electron trapping-detrapping associated with the hydrocarbon layer is found to be an intrinsic noise source contributing to the low frequency noise in the unstable contact region.

Chemical control of electrical contact to sp² carbon atoms.

Science.gov (United States)

Frederiksen, Thomas; Foti, Giuseppe; Scheurer, Fabrice; Speisser, Virginie; Schull, Guillaume

2014-04-16

Carbon-based nanostructures are attracting tremendous interest as components in ultrafast electronics and optoelectronics. The electrical interfaces to these structures play a crucial role for the electron transport, but the lack of control at the atomic scale can hamper device functionality and integration into operating circuitry. Here we study a prototype carbon-based molecular junction consisting of a single C60 molecule and probe how the electric current through the junction depends on the chemical nature of the foremost electrode atom in contact with the molecule. We find that the efficiency of charge injection to a C60 molecule varies substantially for the considered metallic species, and demonstrate that the relative strength of the metal-C bond can be extracted from our transport measurements. Our study further suggests that a single-C60 junction is a basic model to explore the properties of electrical contacts to meso- and macroscopic sp(2) carbon structures.

Chemical control of electrical contact to sp2 carbon atoms

Science.gov (United States)

Frederiksen, Thomas; Foti, Giuseppe; Scheurer, Fabrice; Speisser, Virginie; Schull, Guillaume

2014-04-01

Carbon-based nanostructures are attracting tremendous interest as components in ultrafast electronics and optoelectronics. The electrical interfaces to these structures play a crucial role for the electron transport, but the lack of control at the atomic scale can hamper device functionality and integration into operating circuitry. Here we study a prototype carbon-based molecular junction consisting of a single C60 molecule and probe how the electric current through the junction depends on the chemical nature of the foremost electrode atom in contact with the molecule. We find that the efficiency of charge injection to a C60 molecule varies substantially for the considered metallic species, and demonstrate that the relative strength of the metal-C bond can be extracted from our transport measurements. Our study further suggests that a single-C60 junction is a basic model to explore the properties of electrical contacts to meso- and macroscopic sp2 carbon structures.

Serum vitamin d level and susceptibility to multidrug-resistant tuberculosis among household contacts

Science.gov (United States)

Herlina, N.; Sinaga, B. Y. M.; Siagian, P.; Mutiara, E.

2018-03-01

Low levels of vitamin D is a predisposing factor for Multidrug-resistant tuberculosis. Family members in contact with the patient are also at risk of infection. Currently, there is no study that compares vitamin D levels between MDR-TB patients and household contact. This study aims to identify the association between level vitamin D within MDR-TB occurrence. This was a case-control study, with the number of samples in each group (MDR-TB) patients and household contactswere40 people. Each member of each group was checked for vitamin D levels using enzyme-linked immunosorbent assay (ELISA) technique. Statistical analysis was by using Chi-Square analysis using SPSS. Mean levels of vitamin D in MDR-TB patients were 32.21, household contact 31.7. There was anosignificant association between vitamin D levels and MDR-TB occurrence (p=1.0).No significant associationbetween vitamin D level with theMDR-TB occurrence.

The mechanisms and models of interaction between electrical arc and contact materials

International Nuclear Information System (INIS)

Kharin, S.N.

1999-01-01

Mechanisms of arc erosion in electrical contacts are different and depends on the conditions of contact separation. The first one, which occurs at low current with relatively slow rate of heat transfer, involves the evaporation of material from the contact surface. The second mechanism can be characterized by the formation of droplets of molten metal caused by high currents and vapor or magnetic pressure on a molten metal pool. However, in certain cases it is impossible to explain the formation of molten metal droplets in terms of pressure only. Therefore a new hypothesis regarding thermo-capillary mechanism of ejection of liquid metal is discussed. This hypothesis is based on the Marangoni effect which is important when the temperature gradient along the liquid contact zone and the temperature dependence of surface tension become significant (tungsten, zirconium, molybdenum etc.). The fourth erosion mechanism is associated with the ejection of solid particles of contact material with distinct crystalline structure during high current pulses of a short duration. It occurs when thermo-elastic processes overcome the mechanical strength. A mathematical model describing each of the four mechanisms of erosion is presented. Temperature fields and erosion characteristics are determined as a function of the commutation regime and the properties of contact materials. The experimental data are discussed in terms of theoretical approach with respect to the solid phase and droplet formation. Dynamics of each type of arc erosion is described, and recommendations for optimal selection of contact material with minimum erosion are given. (author)

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

Science.gov (United States)

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method

Science.gov (United States)

Lee, Byeong Hyeon; Han, Sangmin; Lee, Sang Yeol

2018-01-01

Amorphous silicon-zinc-tin-oxide (a-SZTO) thin film transistors (TFTs) have been fabricated depending on the silicon ratio in channel layers. The a-SZTO TFT exhibited high electrical properties, such as high mobility of 23 cm2 V-1 s-1, subthreshold swing of 0.74 V/decade and ION/OFF of 2.8 × 108, despite of the addition of Si suppressor. The physical mechanism on the change of the sheet resistance and the contact resistance in a-SZTO TFT has been investigated and proposed closely related with the Si ratio. Both resistances were increased as increasing Si ratio, which clearly indicated that the role of Si is a carrier suppressor directly leading to the increase of channel and contact resistances. To explain the role of Si as a carrier suppressor, the conduction band offset mechanism has been also proposed depending on the change of carrier concentration in channel layer and at the interface between electrode and channel layer. 2007.01-2011.12 Senior Researcher at korea institute of science and technology (KOREA). 2008.01-2011.12 Professor at University of Science and Technology (KOREA). 1995.01-2007.12 Professor at Yonsei University (KOREA). 2002.01-2003.12 Inviting Researcher at Los Alamos National Lab (USA). 1993.01-1995.12 Senior Researcher at Electronics and Telecommunications Research Institute (KOREA). 1992.01-1993.01 Research Associate at State University of New York at Buffalo (USA).

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.

2013-05-09

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene\\'s most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

The valve effect of the carbide interlayer of an electric resistance plug

International Nuclear Information System (INIS)

Lakomskii, V.

1998-01-01

The welded electric resistance plug (ERP) usually contains a carbide interlayer at the plug-carbon material interface. The interlayer forms during welding the contact metallic alloy with the carbon material when the oxide films of the alloy are reduced on the interface surface by carbon to the formation of carbides and the surface layer of the plug material dissolves carbon to saturation. Subsequently, during solidification of the plug material it forms carbides with the alloy components. The structural composition of the carbide interlayer is determined by the chemical composition of the contact alloy. In alloys developed by the author and his colleagues the carbide forming elements are represented in most cases by silicon and titanium and, less frequently, by chromium and manganese. Therefore, the carbide interlayers in the ERP consisted mainly of silicon and titanium carbides

Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects

International Nuclear Information System (INIS)

Schulze, A; Hantschel, T; Dathe, A; Eyben, P; Vandervorst, W; Ke, X

2012-01-01

The fabrication and integration of low-resistance carbon nanotubes (CNTs) for interconnects in future integrated circuits requires characterization techniques providing structural and electrical information at the nanometer scale. In this paper we present a slice-and-view approach based on electrical atomic force microscopy. Material removal achieved by successive scanning using doped ultra-sharp full-diamond probes, manufactured in-house, enables us to acquire two-dimensional (2D) resistance maps originating from different depths (equivalently different CNT lengths) on CNT-based interconnects. Stacking and interpolating these 2D resistance maps results in a three-dimensional (3D) representation (tomogram). This allows insight from a structural (e.g. size, density, distribution, straightness) and electrical point of view simultaneously. By extracting the resistance evolution over the length of an individual CNT we derive quantitative information about the resistivity and the contact resistance between the CNT and bottom electrode. (paper)

Thermal-wave balancing flow sensor with low-drift power feedback

NARCIS (Netherlands)

Dijkstra, Marcel; Lammerink, Theodorus S.J.; Pjetri, O.; de Boer, Meint J.; Berenschot, Johan W.; Wiegerink, Remco J.; Elwenspoek, Michael Curt

2014-01-01

A control system using a low-drift power-feedback signal was implemented applying thermal waves, giving a sensor output independent of resistance drift and thermo-electric offset voltages on interface wires. Kelvin-contact sensing and power control is used on heater resistors, thereby inhibiting the

Electrical resistivity of Y(Fe1-x Alx)2 in the spin glass concentration range

International Nuclear Information System (INIS)

Cunha, S.F. da; Souza, G.P. de; Takeushi, A.Y.

1986-01-01

The temperature dependence of the electrical resistivity of the Y(Fe 1-x Al x ) 2 system (0.125 ≤ x ≤ 0.25) was measured. This system exhibits a minimum at low temperatures for the concentration range where the phase diagram presents a spin glass-ferromagnetic transition. A negative temperature coefficient is observed at high temperatures for x > 0.18 and was attributed to the high value of the electrical resistivity in this concentration range. (Author) [pt

Using electrical resistivity tomography to differentiate sapwood from heartwood: application to conifers.

Science.gov (United States)

Guyot, Adrien; Ostergaard, Kasper T; Lenkopane, Mothei; Fan, Junliang; Lockington, David A

2013-02-01

Estimating sapwood area is one of the main sources of error when upscaling point scale sap flow measurements to whole-tree water use. In this study, the potential use of electrical resistivity tomography (ERT) to determine the sapwood-heartwood (SW-HW) boundary is investigated for Pinus elliottii Engelm var. elliottii × Pinus caribaea Morelet var. hondurensis growing in a subtropical climate. Specifically, this study investigates: (i) how electrical resistivity is correlated to either wood moisture content, or electrolyte concentration, or both, and (ii) how the SW-HW boundary is defined in terms of electrical resistivity. Tree cross-sections at breast height are analysed using ERT before being felled and the cross-section surface sampled for analysis of major electrolyte concentrations, wood moisture content and density. Electrical resistivity tomography results show patterns with high resistivities occurring in the inner part of the cross-section, with much lower values towards the outside. The high-resistivity areas were generally smaller than the low-resistivity areas. A comparison between ERT and actual SW area measured after felling shows a slope of the linear regression close to unity (=0.96) with a large spread of values (R(2) = 0.56) mostly due to uncertainties in ERT. Electrolyte concentrations along sampled radial transects (cardinal directions) generally showed no trend from the centre of the tree to the bark. Wood moisture content and density show comparable trends that could explain the resistivity patterns. While this study indicates the potential for application of ERT for estimating SW area, it shows that there remains a need for refinement in locating the SW-HW boundary (e.g., by improvement of the inversion method, or perhaps electrode density) in order to increase the robustness of the method.

Solution derived ZnO:Al films with low resistivity

International Nuclear Information System (INIS)

Schellens, K.; Capon, B.; De Dobbelaere, C.; Detavernier, C.; Hardy, A.; Van Bael, M.K.

2012-01-01

ZnO:Al thin films were prepared via chemical solution deposition, using 2-butoxyethanol as an alternative for 2-methoxyethanol, which is more commonly used, but acutely toxic. The precursor solutions can be readily spin coated. The phase, morphology, electrical and optical properties of the deposited films are investigated, by XRD (X-ray diffraction), scanning electron microscopy, a two-point contact measurement and UV–vis spectrophotometry respectively. This way, the effect of this solvent is investigated. The films are deposited on borosilicate glass substrates and were found to be continuous and smooth. XRD measurements show a highly preferential c-axis orientation. The effects of the thermal treatment profile and Al dopant concentration are studied with respect to the obtained electrical properties. Optimally, the electrical resistivity was lowered to 6.5 × 10 −3 Ω cm after annealing at 450 °C in a 95% He/5% H 2 atmosphere. - Highlights: ► 2-Butoxyethanol as alternative for 2-methoxyethanol for precursor synthesis. ► Al:ZnO thin films with a strong preferential c-axis orientation are obtained. ► A forming gas anneal greatly improves the electrical properties. ► The addition of 1 at.% Al is found to improve the electrical properties.

TECHNICAL EVALUATION OF ELECTRICAL RESISTIVITY METHODS AT THE DEPARTMENT OF ENERGY HANFORD SITE

International Nuclear Information System (INIS)

PETERSEN SW

2008-01-01

There is a continuing need for cost-effective subsurface characterization within the vadose zone and groundwater at the U.S. Department of Energy (DOE) Hanford Site, Richland, Washington. With more than 1600 liquid and solid waste sites and 200 burial sites, contaminants have migrated to and through the vadose zone. In addition, future groundwater plumes may be generated from contaminants presently in the vadose zone. Relatively low-cost geophysical techniques can provide spatially extensive data that may provide information about the presence and extent of some contaminants. Recent electrical resistivity surveys at Hanford have provided encouraging results for mapping of some contaminants, such as nitrate, in the vadose zone. Because mobile radionuclides and trace elements may have been transported with nitrate through the vadose zone, the method may be used to map some mobile contaminants of concern, such as technetium-99 (99Tc). Validation of these recent electrical resistivity survey results remains to be completed. Electrical resistivity surveys have been conducted at various waste sites in the 200 Area of the Hanford Site: BC Cribs and Trenches (BCCT), T, S, U, C, B Tank Farms and the Purex Plant. Surveys have been completed using surface and well-to-well (WTW) array configurations. The goals of the surveys, as described by Fluor Hanford and CH2MHill Hanford staff, were to test the applicability of resistivity methods in identifying the presence of and mapping approximate extent of contaminant plumes within the vadose zone. The overall goal of the project was to evaluate the utility of electrical resistivity methods for characterizing contaminants of potential concern in the vadose zone in the 200 Area of the Hanford Site. The panel was asked to perform the following activities: (1) Evaluate recently completed and ongoing electrical resistivity projects at Hanford in terms of methodology used, results obtained, and lessons learned, with specific focus on (a

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

International Nuclear Information System (INIS)

Ramón, Michael E.; Movva, Hema C. P.; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K.; Magnuson, Carl W.; Ruoff, Rodney S.

2014-01-01

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R C ) and access resistance (R A ). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f T ) after doping, as compared to ∼23% f T improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R C on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R A for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates

Anastomotic leak detection by electrolyte electrical resistance.

Science.gov (United States)

DeArmond, Daniel T; Cline, Adam M; Johnson, Scott B

2010-08-01

To characterize a new method of postoperative gastrointestinal leak detection based on electrical resistance changes due to extravasated electrolyte contrast. Postoperative gastrointestinal leak results in increased patient morbidity, mortality, and hospital costs that can be mitigated by early diagnosis. A sensitive and specific diagnostic test that could be performed at the bedside has the potential to shorten the time to diagnosis and thereby improve the quality of treatment. Anaesthetized rats underwent celiotomy and creation of a 5-mm gastrotomy. In experimental animals, electrical resistance changes were measured with a direct current ohmmeter after the introduction of 5 cc of 23.4% NaCl electrolyte solution via gavage and measured with a more sensitive alternating current ohmmeter after the gavage of 1-5 cc of 0.9% NaCl. Comparison was made to negative controls and statistical analysis was performed. Leakage from the gastrotomy induced by as little as 1 cc of gavage-delivered 0.9% NaCl contrast solution was detectable as a statistically significant drop in electrical resistance when compared to results from negative controls. Electrical resistance change associated with electrolyte-gated leak detection is highly sensitive and specific and has the potential to be rapidly translated into clinical settings.

Electrical resistivity characterization of anisotropy in the Biscayne Aquifer.

Science.gov (United States)

Yeboah-Forson, Albert; Whitman, Dean

2014-01-01

Electrical anisotropy occurs when electric current flow varies with azimuth. In porous media, this may correspond to anisotropy in the hydraulic conductivity resulting from sedimentary fabric, fractures, or dissolution. In this study, a 28-electrode resistivity imaging system was used to investigate electrical anisotropy at 13 sites in the Biscayne Aquifer of SE Florida using the rotated square array method. The measured coefficient of electrical anisotropy generally ranged from 1.01 to 1.12 with values as high as 1.36 found at one site. The observed electrical anisotropy was used to estimate hydraulic anisotropy (ratio of maximum to minimum hydraulic conductivity) which ranged from 1.18 to 2.83. The largest values generally were located on the Atlantic Coastal Ridge while the lowest values were in low elevation areas on the margin of the Everglades to the west. The higher values of anisotropy found on the ridge may be due to increased dissolution rates of the oolitic facies of the Miami formation limestone compared with the bryozoan facies to the west. The predominate trend of minimum resistivity and maximum hydraulic conductivity was E-W/SE-NW beneath the ridge and E-W/SW-NE farther west. The anisotropy directions are similar to the predevelopment groundwater flow direction as indicated in published studies. This suggests that the observed anisotropy is related to the paleo-groundwater flow in the Biscayne Aquifer. © 2013, National Ground Water Association.

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.

Science.gov (United States)

Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun-Heub; Ando, Daisuke; Koike, Junichi

2018-01-24

Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr 2 Ge 2 Te 6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge 2 Sb 2 Te 5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously, CrGT can break the trade-off relationship between the crystallization temperature and operating speed.

Note: Laser ablation technique for electrically contacting a buried implant layer in single crystal diamond

International Nuclear Information System (INIS)

Ray, M. P.; Baldwin, J. W.; Butler, J. E.; Pate, B. B.; Feygelson, T. I.

2011-01-01

The creation of thin, buried, and electrically conducting layers within an otherwise insulating diamond by annealed ion implantation damage is well known. Establishing facile electrical contact to the shallow buried layer has been an unmet challenge. We demonstrate a new method, based on laser micro-machining (laser ablation), to make reliable electrical contact to a buried implant layer in diamond. Comparison is made to focused ion beam milling.

Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

International Nuclear Information System (INIS)

Yagi, Iwao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu

2004-01-01

We established a dry-etching patterning process for the channel formation of pentacene thin-film transistor, and fabricated a four-terminal device equipped with a gate electrode. The four-terminal device enabled us to divide two-terminal source-drain resistance into two components of contact resistance and pentacene channel resistance. We obtained direct evidence of a gate-voltagedependent contact resistance change: the gate-induced charge significantly reduced the contact resistance and increased source-drain current. Furthermore, the temperature dependence of the device clearly indicated that the contact resistance was much higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K. An observed activation energy of 80 meV for contact resistance was higher than that of 42 meV for pentacene channel resistance

Effect of electrode type in the resistive switching behaviour of TiO2 thin films

International Nuclear Information System (INIS)

Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

2013-01-01

The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization

Energy Technology Data Exchange (ETDEWEB)

Dubecký, F., E-mail: elekfdub@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Kindl, D.; Hubík, P. [Institute of Physics CAS, v.v.i., Cukrovarnická 10, CZ-16200 Prague (Czech Republic); Mičušík, M. [Polymer Institute, SAS, Dúbravská cesta 9, Bratislava, SK-84541 (Slovakia); Dubecký, M. [Department of Physics, Faculty of Science, University of Ostrava, 30. dubna 22, CZ-70103 Ostrava 1 (Czech Republic); Boháček, P.; Vanko, G. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, Bratislava, SK-84104 (Slovakia); Gombia, E. [IMEM-CNR, Parco area delle Scienze 37/A, Parma, I-43010 (Italy); Nečas, V. [Faculty of Electrical Engineering and Information Technology, SUT, Ilkovičova 3, Bratislava, SK-81219 (Slovakia); Mudroň, J. [Department of Electronics, Academy of Armed Forces, Demänová 393, Liptovský Mikuláš, SK-03106 (Slovakia)

2017-02-15

Highlights: • Explored were diodes with full-area low/high work function metal contacts on semi-insulating GaAs (S). • The Mg-S-Mg diode is promising for radiation detectors for its low high-field current. • The XPS analysis of Mg-S interface shows presence of MgO instead of Mg metal. - Abstract: We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional high work function Pt contact versus the less explored low work function Mg contact. The Pt-S-Pt, Mg-S-Mg and mixed Mg-S-Pt structures are characterized by the current-voltage measurements, and individual Pt-S and Mg-S contacts are investigated by the X-ray photoelectron spectroscopy (XPS). The transport measurements of Mg-S-Pt structure show a significant current decrease at low bias while the Mg-S-Mg structure shows saturation current at high voltages more than an order of magnitude lower with respect to the Pt-S-Pt reference. The phenomena observed in Mg-containing samples are explained by the presence of insulating MgO layer at the M-S interface, instead of the elementary Mg, as confirmed by the XPS analysis. Alternative explanations of the influence of MgO layer on the effective resistance of the structures are presented. The reported findings have potential applications in M-S-M sensors and radiation detectors based on SI GaAs.

Electrical resistivity of nanoporous gold modified with thiol self-assembled monolayers

Energy Technology Data Exchange (ETDEWEB)

Hakamada, Masataka, E-mail: hakamada.masataka.3x@kyoto-u.ac.jp; Kato, Naoki, E-mail: katou.naoki.75w@st.kyoto-u.ac.jp; Mabuchi, Mamoru, E-mail: mabuchi@energy.kyoto-u.ac.jp

2016-11-30

Highlights: • Nanoporous gold is modified with thiol-containing self-assembled monolayers. • The electrical resistivity of the thiol-modified nanoporous gold increases. • The electrical resistivity increases with increasing thiol concentration. • Monolayer tail groups enhance the atmosphere dependence of electrical resistivity. - Abstract: The electrical resistivity of nanoporous gold (NPG) modified with thiol self-assembled monolayers (SAMs) has been measured at 298 K using a four-probe method. We found that the adsorption of thiol SAMs increases the electrical resistivity of NPG by up to 22.2%. Dependence of the electrical resistivity on the atmosphere (air or water) was also observed in SAMs-modified NPG, suggesting that the electronic states of the tail groups affect the electrons of the binding sulfur and adjacent surface gold atoms. The present results suggest that adsorption of thiol molecules can influence the behavior of the conducting electrons in NPG and that modification of NPG with SAMs may be useful for environmental sensing.

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly due to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. An experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

International Nuclear Information System (INIS)

Ma Lin; Feng Shiwei; Zhang Yamin; Deng Bing; Yue Yuan

2014-01-01

The effect of drain—source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain—source voltage (V DS ) is decreased. Moreover, the relatively low V DS and large drain—source current (I DS ) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low V DS leads to a relatively low electric field, which leads to the decline of the thermal resistance. (semiconductor devices)

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Science.gov (United States)

Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

2016-05-01

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

The effect of boron implantation on the corrosion behaviour, microhardness and contact resistance of copper and silver surfaces

International Nuclear Information System (INIS)

Henriksen, O.; Johnson, E.; Johansen, A.; Sarholt-Kristensen, L.

1986-01-01

In order to investigate the influence of boron implantation on the corrosion resistance of electrical contacts, a number of pure copper, pure silver and copper edge connector samples have been implanted with boron (40 keV) to fluences of 5.10 20 m -2 and 2.10 21 m -2 . Atmospheric corrosion tests of the implanted species were conducted using the following exposures: H 2 S (12.5 ppm, 4 days), SO 2 (25 ppm, 21 days), saltfog (5% NaCl, 1 day), moist air (93% RH, 56 days), and hot/dry air (70 C, 56 days). The boron implantations lead to a significant reduction in the sulphidation rate of copper and silver. The corrosive film formed during exposure in H 2 S and SO 2 atmospheres is confined to pitted regions on the implanted areas, while a thick and relatively uniform film formation is observed on the unimplanted samples. The corrosion resistance of copper and silver in saltfog atmosphere is somewhat improved by boron implantation, whilst the results from exposures to moist air or hot/dry air are inconclusive. The improved corrosion behaviour is accompanied by an increase in the contact resistance and in the microhardness of the implanted samples. (orig.)

On equivalent resistance of electrical circuits

Science.gov (United States)

Kagan, Mikhail

2015-01-01

While the standard (introductory physics) way of computing the equivalent resistance of nontrivial electrical circuits is based on Kirchhoff's rules, there is a mathematically and conceptually simpler approach, called the method of nodal potentials, whose basic variables are the values of the electric potential at the circuit's nodes. In this paper, we review the method of nodal potentials and illustrate it using the Wheatstone bridge as an example. We then derive a closed-form expression for the equivalent resistance of a generic circuit, which we apply to a few sample circuits. The result unveils a curious interplay between electrical circuits, matrix algebra, and graph theory and its applications to computer science. The paper is written at a level accessible by undergraduate students who are familiar with matrix arithmetic. Additional proofs and technical details are provided in appendices.

A Glimpse in the Third Dimension for Electrical Resistivity Profiles

Science.gov (United States)

Robbins, A. R.; Plattner, A.

2017-12-01

We present an electrode layout strategy designed to enhance the popular two-dimensional electrical resistivity profile. Offsetting electrodes from the traditional linear layout and using 3-D inversion software allows for mapping the three-dimensional electrical resistivity close to the profile plane. We established a series of synthetic tests using simulated data generated from chosen resistivity distributions with a three-dimensional target feature. All inversions and simulations were conducted using freely-available ERT software, BERT and E4D. Synthetic results demonstrate the effectiveness of the offset electrode approach, whereas the linear layout failed to resolve the three-dimensional character of our subsurface feature. A field survey using trench backfill as a known resistivity contrast confirmed our synthetic tests. As we show, 3-D inversions of linear layouts for starting models without previously known structure are futile ventures because they generate symmetric resistivity solutions with respect to the profile plane. This is a consequence of the layout's inherent symmetrical sensitivity patterns. An offset electrode layout is not subject to the same limitation, as the collective measurements do not share a common sensitivity symmetry. For practitioners, this approach presents a low-cost improvement of a traditional geophysical method which is simple to use yet may provide critical information about the three dimensional structure of the subsurface close to the profile.

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.; Breward, C. J. W.; Howell, P. D.; Young, R. J. S.

2013-01-01

across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a

Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

NARCIS (Netherlands)

Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

2008-01-01

Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin

2018-05-15

We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

Fabrication of silicon-embedded low resistance high-aspect ratio planar copper microcoils

Science.gov (United States)

Syed Mohammed, Zishan Ali; Puiu, Poenar Daniel; Aditya, Sheel

2018-01-01

Low resistance is an important requirement for microcoils which act as a signal receiver to ensure low thermal noise during signal detection. High-aspect ratio (HAR) planar microcoils entrenched in blind silicon trenches have features that make them more attractive than their traditional counterparts employing electroplating through a patterned thick polymer or achieved through silicon vias. However, challenges met in fabrication of such coils have not been discussed in detail until now. This paper reports the realization of such HAR microcoils embedded in Si blind trenches, fabricated with a single lithography step by first etching blind trenches in the silicon substrate with an aspect ratio of almost 3∶1 and then filling them up using copper electroplating. The electroplating was followed by chemical wet etching as a faster way of removing excess copper than traditional chemical mechanical polishing. Electrical resistance was further reduced by annealing the microcoils. The process steps and challenges faced in the realization of such structures are reported here followed by their electrical characterization. The obtained electrical resistances are then compared with those of other similar microcoils embedded in blind vias.

Low-temperature-cured highly conductive composite of Ag nanowires and polyvinyl alcohol

International Nuclear Information System (INIS)

He Song; Zhang Xiang; Yang Bingchu; Xu Xiaomei; Chen Hui; Zhou Conghua

2017-01-01

Flexible conductive films were fabricated from a low-temperature-cured, highly conductive composite of silver nanowires (as conducting filler) and polyvinyl alcohol (PVA, as binder). Sheet resistance of 0.12 Ω/sq, conductivity of 2.63×10 4 S/cm, and contact resistance of 1.0 Ω/cm 2 were measured in the films, along with excellent resistance to scratching and good flexibility, making them suitable electrical contact materials for flexible optoelectronic devices. Effects of curing temperature, curing duration, film thickness, and nanowire length on the film’s electrical properties were studied. Due to the abundance of hydroxyl groups on its molecular chains, the addition of PVA improves the film’s flexibility and resistance to scratching. Increased nanowire density and nanowire length benefit film conductance. Monte Carlo simulation was used to further explore the impact of these two parameters on the conductivity. It was observed that longer nanowires produce a higher length-ratio of conducting routes in the networks, giving better film conductivity. (paper)

Diffusivity and electrical resistivity measurements in rock matrix around fractures

International Nuclear Information System (INIS)

Kumpulainen, H.; Uusheimo, K.

1989-12-01

Microfracturing of rock matrix around permeable fractures was studied experimentally from drill core samples around major fractures. The methods used were diffusion measurements using a 36 Cl-tracer and electrical resistivity measurements. Rock samples were from the Romuvaara investigation site, the granite specimen around a partially filled carbonate fracture (KR4/333 m) and gneiss specimen around a slickenside fracture (KR1/645 m). A consistent difference of one to two orders of magnitude in the levels of the methods with regard to the effective diffusion coefficients for Cl - -ion was found, the electrical resistivity measurement giving higher values. On the basis of the diffusion measurements the diffusion porosities could be calculated but these remained one to two orders of magnitude lower than that expected for granitic rocks using the water saturation method. A possible reason for these differences could have been the low, in some cases 0.004 M NaC1-concentration in the diffusion experiments vs. the 1 M NaCl-concentration used in the electrical resistivity measurements. Due to the small number of specimens and cross sectional areas of only 2 cm 2 , rock inhomogeneity effects were significant making the interpretation of the results somewhat troublesome. Porosities on fracture surfaces seemed to be higher than in the deeper, more intact rock matrix

Electrical Resistivity Measurements of Downscaled Homogenous ...

African Journals Online (AJOL)

Knowledge of electrical resistivity for reservoir rocks is crucial for a number of reservoir engineering tasks such as the determination of oil-in-place and the calibration of resistivity logs. Those properties can now be predicted by numerical calculations directly on micro-CT images taken from rock fragments typically having a ...

Photothermal radiometry applied to characterization and control of thermal contact resistance of crimped metals; Radiometrie photothermique appliquee a la caracterisation et au controle de la resistance thermique de contact de metaux sertis

Energy Technology Data Exchange (ETDEWEB)

Van Schel, Etienne

1989-11-15

Modulated photothermal radiometry is used to study the thermal contact between two metals. At first, two models using a bidimensional axisymmetric geometry are proposed to describe the interface: the first one deals with thermal contact resistance, the second one with an equivalent layer. A thorough calculation of the photothermal signal taking into account the nature of the sample and the detection is here presented. Theoretical simulations show the influence of several parameters (frequency. dimensions of the excitation and the detection) on the sensitivity of the method applied to the detection of the thermal resistance. The comparison, with a three layer-model justifies the use of thermal resistance in periodical regime, for air layers between metals. Then, we present an experimental device that is used to validate the model. The results, obtained on duralumin-copper samples, show the sensitivity of the method and lead us to propose values of thermal contact resistance for different crimpings. At last an industrial testing equipment is described. The results, obtained on laboratory samples, are confirmed. Heat exchanger pipes, including voluntary defects are tested. Thanks to this device, we are able to make an in situ crimping control that can also be applied to other types of contacts. [French] La radiometrie photothermique est utilisee pour etudier le contact thermique entre deux metaux. Tout d'abord, deux modeles utilisant une geometrie bidimensionnelle axisymetrique sont proposes pour decrire l'interface: le premier utilise une resistance thermique de contact, le second un milieu equivalent Un calcul complet du signal photothermique, prenant en compte la nature de l'echantillon et de la detection, est presente. Des simulations theoriques montrent l'influence de quelques parametres (frequence, dimensions de l'excitation et de la detection) sur la sensibilite de la methode a la detection de la resistance thermique. La comparaison, avec un modele a trois

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

Energy Technology Data Exchange (ETDEWEB)

Ramón, Michael E., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Movva, Hema C. P., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K. [Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758 (United States); Magnuson, Carl W.; Ruoff, Rodney S. [Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-02-17

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R{sub C}) and access resistance (R{sub A}). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f{sub T}) after doping, as compared to ∼23% f{sub T} improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R{sub C} on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R{sub A} for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.

A new method for calculating gas saturation of low-resistivity shale gas reservoirs

Directory of Open Access Journals (Sweden)

Jinyan Zhang

2017-09-01

Full Text Available The Jiaoshiba shale gas field is located in the Fuling area of the Sichuan Basin, with the Upper Ordovician Wufeng–Lower Silurian Longmaxi Fm as the pay zone. At the bottom of the pay zone, a high-quality shale gas reservoir about 20 m thick is generally developed with high organic contents and gas abundance, but its resistivity is relatively low. Accordingly, the gas saturation calculated by formulas (e.g. Archie using electric logging data is often much lower than the experiment-derived value. In this paper, a new method was presented for calculating gas saturation more accurately based on non-electric logging data. Firstly, the causes for the low resistivity of shale gas reservoirs in this area were analyzed. Then, the limitation of traditional methods for calculating gas saturation based on electric logging data was diagnosed, and the feasibility of the neutron–density porosity overlay method was illustrated. According to the response characteristics of neutron, density and other porosity logging in shale gas reservoirs, a model for calculating gas saturation of shale gas was established by core experimental calibration based on the density logging value, the density porosity and the difference between density porosity and neutron porosity, by means of multiple methods (e.g. the dual-porosity overlay method by optimizing the best overlay coefficient. This new method avoids the effect of low resistivity, and thus can provide normal calculated gas saturation of high-quality shale gas reservoirs. It works well in practical application. This new method provides a technical support for the calculation of shale gas reserves in this area. Keywords: Shale gas, Gas saturation, Low resistivity, Non-electric logging, Volume density, Compensated neutron, Overlay method, Reserves calculation, Sichuan Basin, Jiaoshiba shale gas field

Control of Surface Attack by Gallium Alloys in Electrical Contacts.

Science.gov (United States)

1986-03-28

and atmospheric control but does not allow visual observation of the contact brushes. This machine is a small homopolar motor built from mild steel...collectors,gallium, homopolar devices,liquid metals,~- is. ABSTRACT ICNI.. .. w 41N"w -~dv.mp.d Wrllt by Itabata" * Electrical contact between a copp’er...32 5 Test rig with felt metal brushes 32 6 Homopolar test apparatus 33 7 Rewetting of alloy track 33 8 Alloy track after running with finger 34 brushes

A revisit to the temperature dependence of electrical resistivity of α - Titanium at low temperatures

Science.gov (United States)

Sharath Chandra, L. S.; Mondal, R.; Thamizhavel, A.; Dhar, S. K.; Roy, S. B.

2017-09-01

The temperature dependence of resistivity ρ(T) of a polycrystalline sample and a single crystal sample (current along the [0001] direction) of α - Titanium (Ti) at low temperatures is revisited to understand the electrical charge transport phenomena in this hexagonal closed pack metal. We show that the ρ(T) in single crystal Ti can be explained by considering the scattering of electrons due to electron-phonon, electron-electron, inter-band s-d and electron-impurity interactions, whereas the ρ(T) of polycrystalline Ti could not be explained by these interactions alone. We observed that the effects of the anisotropy of the hexagonal structure on the electronic band structure and the phonon dispersion need to be taken into account to explain ρ(T) of polycrystalline Ti. Two Debye temperatures corresponding to two different directions for the electron-phonon interactions and inter-band s-d scattering are needed to account the observed ρ(T) in polycrystalline Ti.

A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

Science.gov (United States)

Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

2017-09-01

This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly die to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. In the present paper, an experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

Oxide Thin-Film Electronics using All-MXene Electrical Contacts

KAUST Repository

Wang, Zhenwei

2018-02-23

2D MXenes have shown great promise in electrochemical and electromagnetic shielding applications. However, their potential use in electronic devices is significantly less explored. The unique combination of metallic conductivity and hydrophilic surface suggests that MXenes can also be promising in electronics and sensing applications. Here, it is shown that metallic Ti3C2 MXene with work function of 4.60 eV can make good electrical contact with both zinc oxide (ZnO) and tin monoxide (SnO) semiconductors, with negligible band offsets. Consequently, both n-type ZnO and p-type SnO thin-film transistors (TFTs) have been fabricated entirely using large-area MXene (Ti3C2) electrical contacts, including gate, source, and drain. The n- and p-type TFTs show balanced performance, including field-effect mobilities of 2.61 and 2.01 cm2 V−1 s−1 and switching ratios of 3.6 × 106 and 1.1 × 103, respectively. Further, complementary metal oxide semiconductor (CMOS) inverters are demonstrated. The CMOS inverters show large voltage gain of 80 and excellent noise margin of 3.54 V, which is 70.8% of the ideal value. Moreover, the operation of CMOS inverters is shown to be very stable under a 100 Hz square waveform input. The current results suggest that MXene (Ti3C2) can play an important role as contact material in nanoelectronics.

Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors.

Science.gov (United States)

Andrews, Joseph B; Mondal, Kunal; Neumann, Taylor V; Cardenas, Jorge A; Wang, Justin; Parekh, Dishit P; Lin, Yiliang; Ballentine, Peter; Dickey, Michael D; Franklin, Aaron D

2018-05-14

Flexible and stretchable electronics are poised to enable many applications that cannot be realized with traditional, rigid devices. One of the most promising options for low-cost stretchable transistors are printed carbon nanotubes (CNTs). However, a major limiting factor in stretchable CNT devices is the lack of a stable and versatile contact material that forms both the interconnects and contact electrodes. In this work, we introduce the use of eutectic gallium-indium (EGaIn) liquid metal for electrical contacts to printed CNT channels. We analyze thin-film transistors (TFTs) fabricated using two different liquid metal deposition techniques-vacuum-filling polydimethylsiloxane (PDMS) microchannel structures and direct-writing liquid metals on the CNTs. The highest performing CNT-TFT was realized using vacuum-filled microchannel deposition with an in situ annealing temperature of 150 °C. This device exhibited an on/off ratio of more than 10 4 and on-currents as high as 150 μA/mm-metrics that are on par with other printed CNT-TFTs. Additionally, we observed that at room temperature the contact resistances of the vacuum-filled microchannel structures were 50% lower than those of the direct-write structures, likely due to the poor adhesion between the materials observed during the direct-writing process. The insights gained in this study show that stretchable electronics can be realized using low-cost and solely solution processing techniques. Furthermore, we demonstrate methods that can be used to electrically characterize semiconducting materials as transistors without requiring elevated temperatures or cleanroom processes.

Solution derived ZnO:Al films with low resistivity

Energy Technology Data Exchange (ETDEWEB)

Schellens, K. [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan, Building D, 3590 Diepenbeek (Belgium); Capon, B. [Ghent University, Department of Solid State Sciences, Krijgslaan 281/S1, 9000 Ghent (Belgium); IMEC and SIM program SoPPoM, Kapeldreef 75, 3001 Leuven (Belgium); De Dobbelaere, C. [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan, Building D, 3590 Diepenbeek (Belgium); Detavernier, C. [Ghent University, Department of Solid State Sciences, Krijgslaan 281/S1, 9000 Ghent (Belgium); IMEC and SIM program SoPPoM, Kapeldreef 75, 3001 Leuven (Belgium); Hardy, A. [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan, Building D, 3590 Diepenbeek (Belgium); IMEC vzw, Division IMOMEC, Institute for Materials Research, Wetenschapspark 1, 3590 Diepenbeek (Belgium); IMEC and SIM program SoPPoM, Kapeldreef 75, 3001 Leuven (Belgium); Van Bael, M.K., E-mail: marlies.vanbael@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan, Building D, 3590 Diepenbeek (Belgium); IMEC vzw, Division IMOMEC, Institute for Materials Research, Wetenschapspark 1, 3590 Diepenbeek (Belgium); IMEC and SIM program SoPPoM, Kapeldreef 75, 3001 Leuven (Belgium)

2012-12-01

ZnO:Al thin films were prepared via chemical solution deposition, using 2-butoxyethanol as an alternative for 2-methoxyethanol, which is more commonly used, but acutely toxic. The precursor solutions can be readily spin coated. The phase, morphology, electrical and optical properties of the deposited films are investigated, by XRD (X-ray diffraction), scanning electron microscopy, a two-point contact measurement and UV-vis spectrophotometry respectively. This way, the effect of this solvent is investigated. The films are deposited on borosilicate glass substrates and were found to be continuous and smooth. XRD measurements show a highly preferential c-axis orientation. The effects of the thermal treatment profile and Al dopant concentration are studied with respect to the obtained electrical properties. Optimally, the electrical resistivity was lowered to 6.5 Multiplication-Sign 10{sup -3} {Omega} cm after annealing at 450 Degree-Sign C in a 95% He/5% H{sub 2} atmosphere. - Highlights: Black-Right-Pointing-Pointer 2-Butoxyethanol as alternative for 2-methoxyethanol for precursor synthesis. Black-Right-Pointing-Pointer Al:ZnO thin films with a strong preferential c-axis orientation are obtained. Black-Right-Pointing-Pointer A forming gas anneal greatly improves the electrical properties. Black-Right-Pointing-Pointer The addition of 1 at.% Al is found to improve the electrical properties.

Low temperature resistivity studies of SmB6: Observation of two-dimensional variable-range hopping conductivity

Science.gov (United States)

Batkova, Marianna; Batko, Ivan; Gabáni, Slavomír; Gažo, Emil; Konovalova, Elena; Filippov, Vladimir

2018-05-01

We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomposed into a temperature-independent term and a temperature-activated term that can be described by variable-range hopping formula for two-dimensional systems, exp [ -(T0 / T) 1 / 3 ]. Thus, our results indicate importance of hopping type of electrical transport in the near-surface region of SmB6.

Inter-strand resistance measurements in the termination of the ITER SULTAN samples

International Nuclear Information System (INIS)

Cau, F; Bruzzone, P

2009-01-01

In cabled conductors a perfect uniformity of the current among the strands is hardly reached, due to the non-homogeneity of the contact resistance distribution between the strands and the copper of the electrical terminations. In the case of large current unbalance, the overloaded strands hit the critical surface at high field early, developing a current sharing voltage, which drives the redistribution of the current, mainly in the electrical terminations where the inter-strand resistance is lower than in the high field conductor. If the inter-strand resistance in the termination is low, the voltage levels are sufficiently low to allow an effective redistribution of the current to the less loaded strands. The inter-strand resistance of three different termination layouts of ITER short length samples is measured to make a database available which can be used to qualify the layout of the joints and their capability of redistributing the current among the strands.

Transmission of methicillin-resistant Staphylococcus aureus to household contacts

NARCIS (Netherlands)

F.P.N. Mollema (Femke); J.H. Richardus (Jan Hendrik); M.D. Behrendt (Myra); N. Vaessen (Norbert); W. Lodder; W. Hendriks; H.A. Verbrugh (Henri); A. Voss (Andreas)

2010-01-01

textabstractThe frequency of and risk factors for methicillin-resistant Staphylococcus aureus (MRSA) transmission from a MRSA index person to household contacts were assessed in this prospective study. Between January 2005 and December 2007, 62 newly diagnosed MRSA index persons (46 patients and 16

Influence of illumination and decay of electrical resistance of ITO nanoscale layers

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)], E-mail: karoly.somogyi@microvacuum.com; Erdelyi, K.; Szendro, I. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)

2008-09-30

Indium tin oxide (ITO) is known as a transparent oxide with n-type electrical conductivity. However, the as grown ITO layers have high resistivity and the transparency is also limited. In this work, thin ITO layers were deposited by evaporation and then underwent a post-growth annealing. Annealing leads to a low electrical resistivity and to an enhanced transparency. Annealed samples show n-type conductivity. In this work, ITO layers of typically 10 nm thicknesses were deposited onto Si{sub 1-x}Ti{sub x}O{sub 2} covered glass substrates and then annealed. First the conductivity was evaluated after the annealing. The rough, quick estimation was performed by simple two point direct resistance measurement, and then van der Pauw configuration and collinear four-point probe method were applied. The light sensitivity and storage time dependent stability were studied. It is demonstrated that the resistance decreases due to illumination, though only in a small extent. The measure and speed of the decrease depend on the wavelength of the light and the process is very slow (up to hours). The recovery of the starting resistance is also a slow process.

Electrical resistivity measurement to predict uniaxial compressive ...

Indian Academy of Sciences (India)

Electrical resistivity values of 12 different igneous rocks were measured on core samples using a resistivity meter in the ... It was seen that the UCS and tensile strength values were linearly correlated with the ..... Innovation 2 20. Archie G E ...

Ohmic contacts to semiconducting diamond

Science.gov (United States)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Low-resistance strip sensors for beam-loss event protection

International Nuclear Information System (INIS)

Ullán, M.; Benítez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; García, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A; Sadrozinski, H.F.-W.

2014-01-01

AC-coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punch-through structure leading to large voltages. We present here our developments to fabricate low-resistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology

Evaluation of Blast Resistance of Fiber Reinforced Composite Specimens under Contact Blast Load

Science.gov (United States)

Janota, O.; Foglar, M.

2017-09-01

This paper presents results of experimental programme which took place in 2014, 2015 and 2016. Experiments were focused on the resistance of full scale concrete panels subjected to contact blast loading. Specimens were loaded by contact blast by plastic explosive. All specimens were reinforced concrete slabs made of fiber concrete. Basalt mesh and textile sheets were added to some of the experiments for creating more heterogeneous material to achieve better resistance of the specimens. Evaluation of experiments was mainly focused on the damaged area on the contact side and soffit of the specimens. Dependency of the final damage of concrete panels on the weight of explosive and concrete strength was assessed.

Effect of Temperature and Vibration on Electrical Connectors with Different Number of Contact Cores

Directory of Open Access Journals (Sweden)

Song W. L.

2016-01-01

Full Text Available In this paper, we presented the results from three related analysis performed by adopting the failure models, which provided an explanation of performance influencing factors caused by different number of contact cores, for the purpose of measuring the temperature change and deformation value, which were the factors causing contact failure. The failures were localized in contact parts of the connectors. Performed investigations included thermal analysis, modal analysis, harmonic response analysis and contact failure analysis. From the results of these simulations, related temperature and vibration analysis nephograms were got respectively. And the correctness of results of thermal analysis was verified by Fourier law. The research results of this paper provide a reference for thermal analysis and vibration analysis of electrical connectors, which is important for ensuring the reliability and safety of electrical connectors.

Silver antimony Ohmic contacts to moderately doped n-type germanium

Energy Technology Data Exchange (ETDEWEB)

Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2014-04-21

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

Relating the Electrical Resistance of Fresh Concrete to Mixture Proportions.

Science.gov (United States)

Obla, K; Hong, R; Sherman, S; Bentz, D P; Jones, S Z

2018-01-01

Characterization of fresh concrete is critical for assuring the quality of our nation's constructed infrastructure. While fresh concrete arriving at a job site in a ready-mixed concrete truck is typically characterized by measuring temperature, slump, unit weight, and air content, here the measurement of the electrical resistance of a freshly cast cylinder of concrete is investigated as a means of assessing mixture proportions, specifically cement and water contents. Both cement and water contents influence the measured electrical resistance of a sample of fresh concrete: the cement by producing ions (chiefly K + , Na + , and OH - ) that are the main source of electrical conduction; and the water by providing the main conductive pathways through which the current travels. Relating the measured electrical resistance to attributes of the mixture proportions, such as water-cement ratio by mass ( w/c ), is explored for a set of eleven different concrete mixtures prepared in the laboratory. In these mixtures, w/c , paste content, air content, fly ash content, high range water reducer dosage, and cement alkali content are all varied. Additionally, concrete electrical resistance data is supplemented by measuring the resistivity of its component pore solution obtained from 5 laboratory-prepared cement pastes with the same proportions as their corresponding concrete mixtures. Only measuring the concrete electrical resistance can provide a prediction of the mixture's paste content or the product w*c ; conversely, when pore solution resistivity is also available, w/c and water content of the concrete mixture can be reasonably assessed.

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

Temperature and mixing effects on electrical resistivity of carbon fiber enhanced concrete

International Nuclear Information System (INIS)

Chang, Christiana; Song, Gangbing; Gao, Di; Mo, Y L

2013-01-01

In this paper, the effect of temperature and mixing procedure on the electrical resistivity of carbon fiber enhanced concrete is investigated. Different compositions of concrete containing varying concentrations of carbon fiber into normal and self-consolidating concrete (SCC) were tested under DC electrical loading over the temperature range −10 to 20 °C. The electrical resistivity of the bulk samples was calculated and compared against temperature. It was observed that there is an inverse exponential relationship between resistivity and temperature which follows the Arrhenius relationship. The bulk resistivity decreased with increasing fiber concentration, though data from SCC indicates a saturation limit beyond which electrical resistivity begins to drop. The activation energy of the bulk electrically conductive concrete was calculated and compared. While SCC exhibited the lowest observed electrical resistance, the activation energy was similar amongst SCC and surfactant enhanced concrete, both of which were lower than fiber dispersed in normal concrete. (paper)

ENVIRONMENTAL MONITORING OF LEAKS USING TIME LAPSED LONG ELECTRODE ELECTRICAL RESISTIVITY

International Nuclear Information System (INIS)

Myers, D.A.; Rucker, D.F.; Fink, J.B.; Loke, M.H.

2009-01-01

Highly industrialized areas pose challenges for surface electrical resistivity characterization due to metallic infrastructure. The infrastructure is typically more conductive than the desired targets and will mask the deeper subsurface information. These challenges may be minimized if steel-cased wells are used as long electrodes in the area near the target. We demonstrate a method of using long electrodes to electrically monitor a simulated leak from an underground storage tank with both synthetic examples and a field demonstration. The synthetic examples place a simple target of varying electrical properties beneath a very low resistivity layer. The layer is meant to replicate the effects of infrastructure. Both surface and long electrodes are tested on the synthetic domain. The leak demonstration for the field experiment is simulated by injecting a high conductivity fluid in a perforated well within the S tank farm at Hanford, and the resistivity measurements are made before and after the leak test. All data are processed in four dimensions, where a regularization procedure is applied in both the time and space domains. The synthetic test case shows that the long electrode ERM could detect relative changes in resistivity that are commensurate with the differing target properties. The surface electrodes, on the other hand, had a more difficult time matching the original target's footprint. The field results shows a lowered resistivity feature develop south of the injection site after cessation of the injections. The time lapsed regularization parameter has a strong influence on the differences in inverted resistivity between the pre and post injection datasets, but the interpretation of the target is consistent across all values of the parameter. The long electrode ERM method may provide a tool for near real-time monitoring of leaking underground storage tanks.

Sputter-Resistant Materials for Electric Propulsion, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Phase 2 project shall develop sputter-resistant materials for use in electric propulsion test facilities and for plume shields on spacecraft using electric...

Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

Directory of Open Access Journals (Sweden)

Ye Tian

2012-03-01

Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

electrical resistivity investigation of the groundwater potential in ...

African Journals Online (AJOL)

The VES data generated were processed and interpreted using partial curve matching ... electrical sounding, a technique of electrical resistivity method in identifying viable .... Geoelectric/Electromagnetic VLF Survey for. Groundwater in a ...

Resistance of Pseudomonas aeruginosa isolates to hydrogel contact lens disinfection correlates with cytotoxic activity.

Science.gov (United States)

Lakkis, C; Fleiszig, S M

2001-04-01

One of the most common pathogens in infection of hydrogel contact lens wearers is Pseudomonas aeruginosa, which can gain access to the eye via contamination of the lens, lens case, and lens care solutions. Only one strain per species is used in current regulatory testing for the marketing of chemical contact lens disinfectants. The aim of this study was to determine whether P. aeruginosa strains vary in their susceptibility to hydrogel contact lens disinfectants. A method for rapidly screening bacterial susceptibility to contact lens disinfectants was developed, based on measurement of the MIC. The susceptibility of 35 P. aeruginosa isolates to two chemical disinfectants was found to vary among strains. MICs ranged from 6.25 to 100% for both disinfectants at 37 degrees C, and a number of strains were not inhibited by a 100% disinfectant concentration in the lens case environment at room temperature (22 degrees C). Resistance to disinfection appeared to be an inherent rather than acquired trait, since some resistant strains had been isolated prior to the introduction of the disinfectants and some susceptible P. aeruginosa strains could not be made more resistant by repeated disinfectant exposure. A number of P. aeruginosa strains which were comparatively more resistant to short-term disinfectant exposure also demonstrated the ability to grow to levels above the initial inoculum in one chemical disinfectant after long-term (24 to 48 h) disinfectant exposure. Resistance was correlated with acute cytotoxic activity toward corneal epithelial cells and with exsA, which encodes a protein that regulates cytotoxicity via a complex type III secretion system. These results suggest that chemical disinfection solutions may select for contamination with cytotoxic strains. Further investigation of the mechanisms and factors responsible for resistance may also lead to strategies for reducing adverse responses to contact lens wear.

Controlled fabrication of electrically contacted carbon nanoscrolls

Science.gov (United States)

Schmidt, Marek E.; Hammam, Ahmed M. M.; Iwasaki, Takuya; Kanzaki, Teruhisa; Muruganathan, Manoharan; Ogawa, Shinichi; Mizuta, Hiroshi

2018-06-01

Carbon nanoscrolls (CNS) with their open ended morphology have recently attracted interest due to the potential application in gas capture, biosensors and interconnects. However, CNS currently suffer from the same issue that have hindered widespread integration of CNTs in sensors and devices: formation is done ex situ, and the tubes have to be placed with precision and reliability—a difficult task with low yield. Here, we demonstrate controlled in situ formation of electrically contacted CNS from suspended graphene nanoribbons with slight tensile stress. Formation probability depends on the length to width aspect ratio. Van der Waals interaction between the overlapping layers fixes the nanoscroll once formed. The stability of these CNSs is investigated by helium nano ion beam assisted in situ cutting. The loose stubs remain rolled and mostly suspended unless subject to a moderate helium dose corresponding to a damage rate of 4%–20%. One CNS stub remaining perfectly straight even after touching the SiO2 substrate allows estimation of the bending moment due to van der Waals force between the CNS and the substrate. The bending moment of 5400 eV is comparable to previous theoretical studies. The cut CNSs show long-term stability when not touching the substrate.

Contact printed masks for 3D microfabrication in negative resists

DEFF Research Database (Denmark)

Häfliger, Daniel; Boisen, Anja

2005-01-01

We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded into the ......We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded...... into the negative resist to protect buried material from UV-exposure. Unlike direct evaporation-deposition of a mask onto the SU-8, printing avoids high stress and radiation, thus preventing resist wrinkling and prepolymerization. We demonstrate effective monolithic fabrication of soft, 4-μm thick and 100-μm long...

Hypersensitivity to contact inhibition provides a clue to cancer resistance of naked mole-rat.

Science.gov (United States)

Seluanov, Andrei; Hine, Christopher; Azpurua, Jorge; Feigenson, Marina; Bozzella, Michael; Mao, Zhiyong; Catania, Kenneth C; Gorbunova, Vera

2009-11-17

The naked mole-rat is the longest living rodent with a maximum lifespan exceeding 28 years. In addition to its longevity, naked mole-rats have an extraordinary resistance to cancer as tumors have never been observed in these rodents. Furthermore, we show that a combination of activated Ras and SV40 LT fails to induce robust anchorage-independent growth in naked mole-rat cells, while it readily transforms mouse fibroblasts. The mechanisms responsible for the cancer resistance of naked mole-rats were unknown. Here we show that naked mole-rat fibroblasts display hypersensitivity to contact inhibition, a phenomenon we termed "early contact inhibition." Contact inhibition is a key anticancer mechanism that arrests cell division when cells reach a high density. In cell culture, naked mole-rat fibroblasts arrest at a much lower density than those from a mouse. We demonstrate that early contact inhibition requires the activity of p53 and pRb tumor suppressor pathways. Inactivation of both p53 and pRb attenuates early contact inhibition. Contact inhibition in human and mouse is triggered by the induction of p27(Kip1). In contrast, early contact inhibition in naked mole-rat is associated with the induction of p16(Ink4a). Furthermore, we show that the roles of p16(Ink4a) and p27(Kip1) in the control of contact inhibition became temporally separated in this species: the early contact inhibition is controlled by p16(Ink4a), and regular contact inhibition is controlled by p27(Kip1). We propose that the additional layer of protection conferred by two-tiered contact inhibition contributes to the remarkable tumor resistance of the naked mole-rat.

Laser-based surface preparation of composite laminates leads to improved electrodes for electrical measurements

KAUST Repository

Almuhammadi, Khaled; Selvakumaran, Lakshmi; Alfano, Marco; Yang, Yang; Bera, Tushar Kanti; Lubineau, Gilles

2015-01-01

Electrical impedance tomography (EIT) is a low-cost, fast and effective structural health monitoring technique that can be used on carbon fiber reinforced polymers (CFRP). Electrodes are a key component of any EIT system and as such they should feature low resistivity as well as high robustness and reproducibility. Surface preparation is required prior to bonding of electrodes. Currently this task is mostly carried out by traditional sanding. However this is a time consuming procedure which can also induce damage to surface fibers and lead to spurious electrode properties. Here we propose an alternative processing technique based on the use of pulsed laser irradiation. The processing parameters that result in selective removal of the electrically insulating resin with minimum surface fiber damage are identified. A quantitative analysis of the electrical contact resistance is presented and the results are compared with those obtained using sanding.

Laser-based surface preparation of composite laminates leads to improved electrodes for electrical measurements

KAUST Repository

Almuhammadi, Khaled

2015-10-19

Electrical impedance tomography (EIT) is a low-cost, fast and effective structural health monitoring technique that can be used on carbon fiber reinforced polymers (CFRP). Electrodes are a key component of any EIT system and as such they should feature low resistivity as well as high robustness and reproducibility. Surface preparation is required prior to bonding of electrodes. Currently this task is mostly carried out by traditional sanding. However this is a time consuming procedure which can also induce damage to surface fibers and lead to spurious electrode properties. Here we propose an alternative processing technique based on the use of pulsed laser irradiation. The processing parameters that result in selective removal of the electrically insulating resin with minimum surface fiber damage are identified. A quantitative analysis of the electrical contact resistance is presented and the results are compared with those obtained using sanding.

Thermometry in dielectrophoresis chips for contact-free cell handling

International Nuclear Information System (INIS)

Jaeger, M S; Mueller, T; Schnelle, T

2007-01-01

Cell biology applications, protocols in immunology and stem cell research, require that individual cells are handled under strict control of their contacts to other cells or synthetic surfaces. Dielectrophoresis (DEP) in microfluidic chips is an established technique to investigate, group, wash, cultivate and sort cells contact-free under physiological conditions: microelectrode octode cages, versatile dielectrophoretic elements energized with radio frequency electric fields, stably trap single cells or cellular aggregates. For medical applications and cell cultivation, possible side effects of the dielectrophoretic manipulation, such as membrane polarization and Joule heating, have to be quantified. Therefore, we characterized the electric field-induced warming in dielectrophoretic cages using ohmic resistance measurements, fluorometry, liquid crystal beads, infra-red thermography and bubble size thermometry. We compare the results of these techniques with respect to the influences of voltage, electric conductivity of buffer, frequency, cage size and electrode surface. We conclude that in the culture medium thermal effects may be neglected if low voltages and an electric field-reducing phase pattern are used. Our experimental results provide explicit values for estimating the thermal effect on dielectrophoretically caged cells and show that Joule heating is best minimized by optimizing the cage geometry and reducing the buffer conductivity. The results may additionally serve to evaluate and improve theoretical predictions on field-induced effects. Based on present-day chip processing possibilities, DEP is well suited for the manipulation of cells

Heat dissipation due to ferromagnetic resonance in a ferromagnetic metal monitored by electrical resistance measurement

International Nuclear Information System (INIS)

Yamanoi, Kazuto; Yokotani, Yuki; Kimura, Takashi

2015-01-01

The heat dissipation due to the resonant precessional motion of the magnetization in a ferromagnetic metal has been investigated. We demonstrated that the temperature during the ferromagnetic resonance can be simply detected by the electrical resistance measurement of the Cu strip line in contact with the ferromagnetic metal. The temperature change of the Cu strip due to the ferromagnetic resonance was found to exceed 10 K, which significantly affects the spin-current transport. The influence of the thermal conductivity of the substrate on the heating was also investigated

Performance of electrical contact pins near a nuclear explosion

International Nuclear Information System (INIS)

Ragan, C.E.; Silbert, M.G.; Ellis, A.N.; Robinson, E.E.; Daddario, M.J.

1977-09-01

The pressures attainable in equation-of-state studies using nuclear-explosion-driven shock waves greatly exceed those that can be reached in normal laboratory conditions. However, the diagnostic instrumentation must survive in the high-radiation environment present near such an explosion. Therefore, a set of experiments were fielded on the Redmud event to test the feasibility of using electrical contact pins in this environment. In these experiments a 60-cm-high shield of boron-lead was placed on the rack lid approximately 1 m from the device. A sample consisting of slabs of molybdenum and 238 U was placed on top of the shield, and twelve electrical contact pins were embedded to five different depths in the materials. Five different multiplexing-charging circuits were used for the pins, and a piezoelectric quartz gauge was placed on top of the uranium to obtain an estimate of the fission-energy deposition. All of the charged pins survived the radiation and produced signals indicating shock arrival. The uncertainty in determining the pin-closure time was approximately 3 ns. The signal from the quartz gauge corresponded to a pressure that was consistent with the calculated neutron fluence

Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

International Nuclear Information System (INIS)

Liu, Bingbing; Qin, Fuwen; Wang, Dejun

2015-01-01

Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

Examination of Electrical Resistance of Carburizers Used for Cast Iron Production

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Książek D.

2016-12-01

Full Text Available The publication presents the results of examination of selected carburizers used for cast iron production with respect to their electric resistance. Both the synthetic graphite carburizers and petroleum coke (petcoke carburizers of various chemical composition were compared. The relationships between electrical resistance of tested carburizers and their quality were found. The graphite carburizers exhibited much better conductivity than the petcoke ones. Resistance characteristics were different for the different types of carburizers. The measurements were performed according to the authors’ own method based on recording the electric current flow through the compressed samples. The samples of the specified diameter were put under pressure of the gradually increased value (10, 20, 50, 60, and finally 70 bar, each time the corresponding value of electric resistance being measured with a gauge of high accuracy, equal to 0.1μΩ. The higher pressure values resulted in the lower values of resistance. The relation between both the thermal conductance and the electrical conductance (or the resistance is well known and mentioned in the professional literature. The results were analysed and presented both in tabular and, additionally, in graphic form.

The Electrical Resistivity and Acoustic Emission Response Law and Damage Evolution of Limestone in Brazilian Split Test

Directory of Open Access Journals (Sweden)

Xinji Xu

2016-01-01

Full Text Available The Brazilian split test was performed on two groups of limestone samples with loading directions vertical and parallel to the bedding plane, and the response laws of the electrical resistivity and acoustic emission (AE in the two loading modes were obtained. The test results showed that the Brazilian split test with loading directions vertical and parallel to the bedding showed obviously different results and anisotropic characteristics. On the basis of the response laws of the electrical resistivity and AE, the damage variables based on the electrical resistivity and AE properties were modified, and the evolution laws of the damage variables in the Brazilian split test with different loading directions were obtained. It was found that the damage evolution laws varied with the loading direction. Specifically, in the time-varying curve of the damage variable with the loading direction vertical to the bedding, the damage variable based on electrical resistivity properties showed an obvious damage weakening stage while that based on AE properties showed an abrupt increase under low load.

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

Effect of contact barrier on electron transport in graphene.

Science.gov (United States)

Zhou, Yang-Bo; Han, Bing-Hong; Liao, Zhi-Min; Zhao, Qing; Xu, Jun; Yu, Da-Peng

2010-01-14

The influence of the barrier between metal electrodes and graphene on the electrical properties was studied on a two-electrode device. A classical barrier model was used to analyze the current-voltage characteristics. Primary parameters including barrier height and effective resistance were achieved. The electron transport properties under magnetic field were further investigated. An abnormal peak-valley-peak shape of voltage-magnetoresistance curve was observed. The underlying mechanisms were discussed under the consideration of the important influence of the contact barrier. Our results indicate electrical properties of graphene based devices are sensitive to the contact interface.

Strain-dependent electrical resistance of multi-walled carbon nanotube/polymer composite films

International Nuclear Information System (INIS)

Park, Myounggu; Kim, Hyonny; Youngblood, Jeffrey P

2008-01-01

The strain-dependent electrical resistance characteristics of multi-walled carbon nanotube (MWCNT)/polymer composite films were investigated. In this research, polyethylene oxide (PEO) is used as the polymer matrix. Two representative volume fractions of MWCNT/PEO composite films were selected: 0.56 vol% (near the percolation threshold) and 1.44 vol% (away from the percolation threshold) of MWCNT. An experimental setup which can measure electrical resistance and strain simultaneously and continuously has been developed. Unique and repeatable relationships in resistance versus strain were obtained for multiple specimens with different volume fractions of MWCNT. The overall pattern of electrical resistance change versus strain for the specimens tested consists of linear and nonlinear regions. A resistance change model to describe the combination of linear and nonlinear modes of electrical resistance change as a function of strain is suggested. The unique characteristics in electrical resistance change for different volume fractions imply that MWCNT/PEO composite films can be used as tunable strain sensors and for application into embedded sensor systems in structures

Low resistance splices for HTS devices and applications

Science.gov (United States)

Lalitha, S. L.

2017-09-01

This paper discusses the preparation methodology and performance evaluation of low resistance splices made of the second generation (2G) high-temperature superconductor (HTS). These splices are required in a broad spectrum of HTS devices including a large aperture, high-field solenoid built in the laboratory to demonstrate a superconducting magnetic energy storage (SMES) device. Several pancake coils are assembled in the form of a nested solenoid, and each coil requires a hundred meters or more of 2G (RE)BCO tape. However, commercial availability of this superconductor with a very uniform physical properties is currently limited to shorter piece lengths. This necessitates us having splices to inter-connect the tape pieces within a pancake coil, between adjacent pancake coils, and to attach HTS current leads to the magnet assembly. As a part of the optimization and qualification of splicing process, a systematic study was undertaken to analyze the electrical performance of splices in two different configurations suitable for this magnet assembly: lap joint and spiral joint. The electrical performance is quantified in terms of the resistance of splices estimated from the current-voltage characteristics. It has been demonstrated that a careful application of this splicing technique can generate lap joints with resistance less than 1 nΩ at 77 K.

Ti/Al Ohmic Contacts to n-Type GaN Nanowires

Directory of Open Access Journals (Sweden)

Gangfeng Ye

2011-01-01

Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

On low-resistance neutral earthing mode in 20 kV overhead and cable networks

Directory of Open Access Journals (Sweden)

Mayorov Andrey

2017-01-01

Full Text Available The problems of justification and selection of the required single-phase short-circuit current values in cable and overhead networks of 20 kV with low-resistance neutral earthing are considered. It is shown that the desired values of the short-circuit current can be determined on the basis of harmonization of conflicting influencing factors: reliability of the relay protection and automation devices and required resistances of the earthing devices of electrical installations, including personnel safety. In this case, the main influencing factor is the electrical network structure and parameters

Dual ohmic contact to N- and P-type silicon carbide

Science.gov (United States)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Low-shrink airfield cement concrete with respect to thermal resistance

Directory of Open Access Journals (Sweden)

Linek Małgorzata

2017-01-01

Full Text Available The paper presents theoretical background to the occurrence and propagation of imposed thermal load deep inside the structure of airfield pavement. The standard composition of low-shrink cement concrete intended for airfield pavements was presented. The influence of recurring temperature changes on the extent of shrinkage deformations was assessed. The obtained lab test results, combined with observations and analysis of changes of the hardened concrete microstructure, allowed the authors to draw conclusions. It was proven that the suggested concrete mix composition makes it possible to obtain the concrete type of better developed internal microstructure. More micro air voids and reduced distance between the voids were proven, which provides increased frost resistance of concrete. The change of size, structure and quantity of the hydration products in the cement matrix and better developed contact sections resulted in the improvement of the mechanical parameters of hardened concrete. Low-shrink concrete in all analysed cases proved to have increased resistance to the variable environmental conditions. Increased concrete resistance is identified through reduced registered shrinkage deformations and growth of mechanical parameters of concrete. Low-shrink concrete used for airfield structure guarantees extended time of reliable pavement operation.

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

Directory of Open Access Journals (Sweden)

Xinge Yu

2012-06-01

Full Text Available Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Science.gov (United States)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

Directory of Open Access Journals (Sweden)

K Higa

2016-10-01

Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

Investigation of Thermostressed State of Coating Formation at Electric Contact Surfacing of “Shaft” Type Parts

Directory of Open Access Journals (Sweden)

Olena V. Berezshnaya

2016-01-01

Full Text Available The forming of coating at electric contact surfacing is considered. The mathematical model of the coating formation is developed. The method of numerical recurrent solution of the finite-difference form of static equilibrium conditions of the selected elementary volume of coating is used. This model considers distribution of thermal properties and geometric parameters along the thermal deformation zone during the process of electric contact surfacing by compact material. It is found that the change of value of speed asymmetry factor leads to increasing of the friction coefficient in zone of surfacing. This provides the forming of the coating of higher quality. The limitation of the technological capabilities of equipment for electric contact surfacing is related to the size of recoverable parts and application of high electromechanical powers. The regulation of the speed asymmetry factor allows for expanding the technological capabilities of equipment for electric contact surfacing. The nomograms for determination of the stress on the roller electrode and the finite thickness of the coating as the function of the initial thickness of the compact material and the deformation degree are shown.

Application of Three Electrical Resistivity Arrays to Evaluate ...

African Journals Online (AJOL)

ADOWIE PERE

shallow depth while Dipole-dipole is more susceptible to edge effect at deeper depth followed by the Pole-dipole array. 2D electrical resistivity field .... Data Processing: Both the apparent resistivity measurements for the synthetic and field data ...

Electrical resistivity testing for as-built concrete performance assessment of chloride penetration resistance

NARCIS (Netherlands)

Polder, R.B.; Peelen, W.H.A.

2014-01-01

The electrical resistivity of concrete can provide information about its transport properties, which is relevant for durability performance. For example, resistivity is inversely proportional to chloride diffusion, at least within similar concrete compositions. A methodology is proposed for on-site

Electrical Resistance Tomography imaging of concrete

KAUST Repository

Karhunen, Kimmo; Seppä nen, Aku; Lehikoinen, Anssi; Monteiro, Paulo J.M.; Kaipio, Jari P.

2010-01-01

We apply Electrical Resistance Tomography (ERT) for three dimensional imaging of concrete. In ERT, alternating currents are injected into the target using an array of electrodes attached to the target surface, and the resulting voltages are measured

Effect of surface treatment on the interfacial contact resistance and corrosion resistance of Fe–Ni–Cr alloy as a bipolar plate for polymer electrolyte membrane fuel cells

International Nuclear Information System (INIS)

Yang, Meijun; Zhang, Dongming

2014-01-01

The bipolar plate is an important component of the PEMFC (polymer electrolyte membrane fuel cell) because it supplies the pathway of electron flow between each unit cell. Fe–Ni–Cr alloy is considered as a good candidate material for bipolar plate, but it is limited to use as a bipolar plate due to its high ICR (interfacial contact resistance) and corrosion problem. In order to explore a cost-effective method on surface modification, various chemical and electrochemical treatments are performed on Fe–Ni–Cr alloy to acquire the effect of the surface modification on the ICR and corrosion behavior. The ICR and corrosion resistance of Fe–Ni–Cr alloy can be effectively controlled by the chemical treatment of immersion in the mixed acid solution with 10 vol% HNO 3 , 2 vol% HCl and 1 vol% HF for 10 min at 65 °C and then was placed in 30 vol% HNO 3 solution for 5 min. The chemical treatment is more effective on reducing ICR and improving corrosion resistance than that of electrochemical methods (be carried out in the 2 mol/L H 2 SO 4 solution with the electrical potential from −0.4 V to 0.6 V) for Fe–Ni–Cr alloy as a bipolar plate for polymer electrolyte membrane fuel cells. - Highlights: • The procedure of the surface treatments on Fe–Ni–Cr alloy as bipolar plate was described in detail. • Effects of various surface treatments on the interfacial contact resistivity and corrosion behavior were discussed. • The mechanism of the surface modification was particularly analyzed

Electrical resistivity of liquid Ag-Au alloy

International Nuclear Information System (INIS)